diff --git a/README.md b/README.md index 4a8ed913da9d0877d1fb2facd9bf1db43a5bfb0c..7e12b1928856018c72bcacbdc0c22488cceb40e4 100644 --- a/README.md +++ b/README.md @@ -118,12 +118,12 @@ The source `dev` split is exposed as the Hugging Face `validation` split. | `subset` | Lowercase kebab-case subset chosen from the first source classification label. | | `split` | Hugging Face split: train, validation, or test. | | `classification` | All source panel classifications as a list of panel_id/label structs. | +| `summarization, data_extraction, vqa` | Source task annotations preserved as JSON strings containing stable panel lists. Empty lists indicate that the source record did not provide that task annotation. | +| `bbox` | Source bounding boxes converted to a stable panel list. | | `source` | Relative path to the source image in this repository. | | `provenance` | Relative annotation/content/PDF paths and source navigation fields. | | `width, height, image_format, image_sha256` | Image properties computed from the copied source image. | | `metadata_license, image_license, image_reuse_status` | Conservative reuse and licensing metadata. | -| `bbox` | Source bounding boxes converted to a stable panel list. | -| `summarization, data_extraction, vqa` | Source task annotations preserved as JSON strings containing stable panel lists. Empty lists indicate that the source record did not provide that task annotation. | | `schema_version` | Metadata schema version, currently 1.0.0. | ## Loading diff --git a/subsets/3d-scatter-plot/test/metadata.jsonl b/subsets/3d-scatter-plot/test/metadata.jsonl index 9a84090262b891f478dd9d73563632fafc751fb4..4e45ac950afe1a557d4271a5b6c8334d67322f42 100644 --- a/subsets/3d-scatter-plot/test/metadata.jsonl +++ b/subsets/3d-scatter-plot/test/metadata.jsonl @@ -1,3 +1,3 @@ -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_f15f209f2d385c0b325b181192c48ae716e73fcf75a8c14d4bd8538703ffdfce.jpg","caption":"(a) Data set for Step A generated from the microscopic model.","id":"test/atomic-layer-etching/simulation-usecase/11/f15f209f2d385c0b325b181192c48ae716e73fcf75a8c14d4bd8538703ffdfce","sample_id":"atomic-layer-etching/simulation-usecase/11/f15f209f2d385c0b325b181192c48ae716e73fcf75a8c14d4bd8538703ffdfce","subset":"3d-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"3d scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/f15f209f2d385c0b325b181192c48ae716e73fcf75a8c14d4bd8538703ffdfce.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/f15f209f2d385c0b325b181192c48ae716e73fcf75a8c14d4bd8538703ffdfce.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"3d scatter plot","caption_source":"content.json:img_caption"},"width":505,"height":442,"image_format":"jpeg","image_sha256":"48c2269aed17d81ab39416e1f6060ff4cf04d71a93225707e3a9e4a550352fd1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":8,"width":499,"height":433}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"3D scatter plot of kMC simulation results for Step A (HF fluorination) showing half-cycle time as a function of temperature (533-598 K) and pressure (10-100 Pa). The data shows strong temperature dependence but near-complete pressure independence, with half-cycle times ranging from approximately 1 s at high temperatures to 12 s at low temperatures. The horizontal bands at each temperature confirm that HF adsorption kinetics are not significantly affected by pressure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (K) | Pressure (Pa) | Time (s) |\\n|----------------|---------------|----------|\\n| 520 | 20 | 19 |\\n| 540 | 20 | 18 |\\n| 560 | 20 | 17 |\\n| 580 | 20 | 16 |\\n| 600 | 20 | 15 |\\n| 520 | 40 | 14 |\\n| 540 | 40 | 13 |\\n| 560 | 40 | 12 |\\n| 580 | 40 | 11 |\\n| 600 | 40 | 10 |\\n| 520 | 60 | 9 |\\n| 540 | 60 | 8 |\\n| 560 | 60 | 7 |\\n| 580 | 60 | 6 |\\n| 600 | 60 | 5 |\\n| 520 | 80 | 4 |\\n| 540 | 80 | 3 |\\n| 560 | 80 | 2 |\\n| 580 | 80 | 1 |\\n| 600 | 80 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Step A shows virtually no pressure dependence, as evidenced by the horizontal bands of data points at each temperature. In contrast, Step B exhibits clear pressure dependence with half-cycle times decreasing at higher pressures. This difference arises from the reaction mechanisms: HF dissociatively adsorbs readily onto the Al2O3 surface regardless of pressure, while TMA adsorption in Step B is more kinetically limited and benefits from higher partial pressures to drive secondary adsorption events.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Half-cycle times range from approximately 1 s at high temperatures (~598 K) to about 12 s at low temperatures (~533 K).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Temperature governs the rate constants through the Arrhenius equation, so higher temperatures accelerate surface reactions like hydrogen diffusion and water desorption that determine the fluorination half-cycle completion time.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Process engineers have flexibility in selecting HF pressure without significantly affecting Step A half-cycle time, allowing pressure optimization based on other factors such as precursor utilization efficiency or reactor design constraints.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_fig_6.jpg","caption":"Fig. 6 - Mass change over time during 3 cycles with purge time of $30s$ . (b) Data set for Step B generated from the microscopic model. Fig. 7 - Data points collected for Step A and Step B at various operating conditions.","id":"test/atomic-layer-etching/simulation-usecase/11/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/11/fig_6","subset":"3d-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"3d scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"3d scatter plot","caption_source":"content.json:img_caption"},"width":505,"height":442,"image_format":"jpeg","image_sha256":"603a875cd5ef217aaada71e57748f1221ca1a573bfc898020fb0c95fdec8441f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":5,"width":502,"height":435}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"3D scatter plot of kMC simulation results for Step B (TMA etching) showing half-cycle time as a function of temperature (533-598 K) and pressure (10-100 Pa). The data reveals strong dependencies on both parameters: half-cycle times range from approximately 2 s at high temperature/pressure to over 20 s at low temperature. This dataset was used to train the FNN model for Step B.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (K) | Pressure (Pa) | Time (s) |\\n|----------------|---------------|----------|\\n| 520 | 20 | 38 |\\n| 540 | 20 | 36 |\\n| 560 | 20 | 34 |\\n| 580 | 20 | 32 |\\n| 600 | 20 | 30 |\\n| 520 | 40 | 28 |\\n| 540 | 40 | 26 |\\n| 560 | 40 | 24 |\\n| 580 | 40 | 22 |\\n| 600 | 40 | 20 |\\n| 520 | 60 | 18 |\\n| 540 | 60 | 16 |\\n| 560 | 60 | 14 |\\n| 580 | 60 | 12 |\\n| 600 | 60 | 10 |\\n| 520 | 80 | 8 |\\n| 540 | 80 | 6 |\\n| 560 | 80 | 4 |\\n| 580 | 80 | 2 |\\n| 600 | 80 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both parameters significantly influence Step B half-cycle time. Temperature has the dominant effect: at low temperatures (~533 K), times exceed 20 s, while at high temperatures (~598 K), times drop to around 2-3 s, reflecting Arrhenius kinetics. Pressure also matters for Step B because TMA adsorption kinetics depend on partial pressure. Higher pressures accelerate the secondary TMA adsorption step, reducing half-cycle time. This dual dependence contrasts with Step A, which is largely pressure-independent.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Data points were generated by running kMC simulations across temperature (533-598 K in 5 K intervals) and pressure (10-100 Pa in 5 Pa intervals), averaging 10 simulations per condition to reduce stochastic variation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Each kMC simulation takes approximately 20 minutes on average, and multiple simulations are averaged per operating condition to account for the inherent randomness of the Monte Carlo method.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Temperature in Kelvin (x-axis), Pressure in Pascals (y-axis), and half-cycle time in seconds (z-axis).\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_fig_8.jpg","caption":"Fig. 8 - Comparison of the kMC simulation data and of the predicted data calculated by the PIN for Steps A and B. Scatter (a) and line (b) plots of Step A represent a mean squared error of $0.0856\\%$ , which were calculated from $20\\%$ of the data points of the full kMC data set for Step A. Scatter (c) and line (d) plots of Step B represent a mean squared error of $0.175\\%$ , which were calculated from $20\\%$ of the data points of the full kMC data set for Step B.","id":"test/atomic-layer-etching/simulation-usecase/11/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/11/fig_8","subset":"3d-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"3d scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"3d scatter plot"},{"panel_id":"d","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"3d scatter plot","caption_source":"content.json:img_caption"},"width":1017,"height":809,"image_format":"jpeg","image_sha256":"81a19a6274ca23cb24bdcdaae12cd8251b223c75aa6718f116ecc8a243dc968b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":12,"y":0,"width":458,"height":384},{"panel_id":"b","x":548,"y":0,"width":468,"height":387},{"panel_id":"c","x":12,"y":426,"width":460,"height":380},{"panel_id":"d","x":536,"y":433,"width":480,"height":373}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Scatter plot comparing kMC simulation data (red) with FNN-predicted data (blue) for Step A (HF fluorination) across different operating conditions. The close overlap of red and blue points demonstrates excellent model agreement.\"},{\"panel_id\":\"b\",\"text\":\"Parity plot for Step A showing FNN-predicted half-cycle time versus kMC simulation time. Points cluster tightly along the diagonal y=x line, indicating a mean squared error of only 0.0856% on the 20% test dataset.\"},{\"panel_id\":\"c\",\"text\":\"Scatter plot comparing kMC simulation data (red) with FNN-predicted data (blue) for Step B (TMA etching). The agreement is similarly strong, though with slightly more scatter at higher normalized times.\"},{\"panel_id\":\"d\",\"text\":\"Parity plot for Step B showing FNN-predicted versus simulated half-cycle times. The data closely follows the diagonal reference line with a mean squared error of 0.175%, slightly higher than Step A but still excellent.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Iteration Index | Top Band (Normalized Time, s) | Bottom Band (Normalized Time, s) |\\n|---|---|---|\\n| 0 | 2.40 | 0.60 |\\n| 25 | 2.40 | -0.80 |\\n| 50 | 2.42 | -0.90 |\\n| 75 | 2.45 | -0.90 |\\n| 100 | 2.50 | -0.90 |\\n| 150 | 2.60 | -0.90 |\\n| 200 | 2.70 | -0.90 |\\n| 250 | 2.80 | -0.90 |\"},{\"panel_id\":\"b\",\"text\":\"| Simulation Time (s) | Predicted Time (s) |\\n|---|---|\\n| -0.9 | -0.9 |\\n| 0.0 | 0.0 |\\n| 1.0 | 1.0 |\\n| 2.0 | 2.0 |\\n| 2.7 | 2.7 |\"},{\"panel_id\":\"c\",\"text\":\"| Iteration Index | Top Band (Normalized Time, s) | Bottom Band (Normalized Time, s) |\\n|---|---|---|\\n| 0 | 3.10 | 0.80 |\\n| 25 | 3.00 | -0.30 |\\n| 50 | 2.90 | -0.70 |\\n| 75 | 2.80 | -0.85 |\\n| 100 | 2.65 | -0.95 |\\n| 150 | 2.40 | -1.00 |\\n| 200 | 2.10 | -1.00 |\\n| 250 | 1.80 | -1.00 |\"},{\"panel_id\":\"d\",\"text\":\"| Simulation Time (s) | Predicted Time (s) |\\n|---|---|\\n| -1.0 | -1.0 |\\n| 0.0 | 0.0 |\\n| 1.0 | 1.0 |\\n| 2.0 | 2.0 |\\n| 3.0 | 3.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The FNN model dramatically reduces computation time while maintaining high accuracy. While kMC simulations require approximately 20 minutes per data point on average, the trained FNN predicts half-cycle times in less than one second. This speed enables real-time operational parameter calculations, which is essential for semiconductor manufacturing where batch half-cycles typically complete in under 5 seconds. The FNN also allows rapid screening of operating conditions without costly experiments.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"20% of the kMC data points were used for testing and validation, while the remaining 80% were used for training the FNN models.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The FNN model achieves slightly better accuracy for Step A than Step B. Step A (HF fluorination) shows a mean squared error of 0.0856%, while Step B (TMA etching) has a MSE of 0.175%. This difference likely reflects the greater complexity of Step B's reaction mechanism, which involves more reaction pathways including ligand exchange and DMAF desorption. Nevertheless, both models demonstrate excellent predictive capability with sub-1% errors.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A point on the diagonal indicates perfect agreement between the FNN-predicted half-cycle time and the kMC-simulated time.\"}]}]"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_f15f209f2d385c0b325b181192c48ae716e73fcf75a8c14d4bd8538703ffdfce.jpg","caption":"(a) Data set for Step A generated from the microscopic model.","id":"test/atomic-layer-etching/simulation-usecase/11/f15f209f2d385c0b325b181192c48ae716e73fcf75a8c14d4bd8538703ffdfce","sample_id":"atomic-layer-etching/simulation-usecase/11/f15f209f2d385c0b325b181192c48ae716e73fcf75a8c14d4bd8538703ffdfce","subset":"3d-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"3d scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"3D scatter plot of kMC simulation results for Step A (HF fluorination) showing half-cycle time as a function of temperature (533-598 K) and pressure (10-100 Pa). The data shows strong temperature dependence but near-complete pressure independence, with half-cycle times ranging from approximately 1 s at high temperatures to 12 s at low temperatures. The horizontal bands at each temperature confirm that HF adsorption kinetics are not significantly affected by pressure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (K) | Pressure (Pa) | Time (s) |\\n|----------------|---------------|----------|\\n| 520 | 20 | 19 |\\n| 540 | 20 | 18 |\\n| 560 | 20 | 17 |\\n| 580 | 20 | 16 |\\n| 600 | 20 | 15 |\\n| 520 | 40 | 14 |\\n| 540 | 40 | 13 |\\n| 560 | 40 | 12 |\\n| 580 | 40 | 11 |\\n| 600 | 40 | 10 |\\n| 520 | 60 | 9 |\\n| 540 | 60 | 8 |\\n| 560 | 60 | 7 |\\n| 580 | 60 | 6 |\\n| 600 | 60 | 5 |\\n| 520 | 80 | 4 |\\n| 540 | 80 | 3 |\\n| 560 | 80 | 2 |\\n| 580 | 80 | 1 |\\n| 600 | 80 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Step A shows virtually no pressure dependence, as evidenced by the horizontal bands of data points at each temperature. In contrast, Step B exhibits clear pressure dependence with half-cycle times decreasing at higher pressures. This difference arises from the reaction mechanisms: HF dissociatively adsorbs readily onto the Al2O3 surface regardless of pressure, while TMA adsorption in Step B is more kinetically limited and benefits from higher partial pressures to drive secondary adsorption events.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Half-cycle times range from approximately 1 s at high temperatures (~598 K) to about 12 s at low temperatures (~533 K).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Temperature governs the rate constants through the Arrhenius equation, so higher temperatures accelerate surface reactions like hydrogen diffusion and water desorption that determine the fluorination half-cycle completion time.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Process engineers have flexibility in selecting HF pressure without significantly affecting Step A half-cycle time, allowing pressure optimization based on other factors such as precursor utilization efficiency or reactor design constraints.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":8,"width":499,"height":433}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/f15f209f2d385c0b325b181192c48ae716e73fcf75a8c14d4bd8538703ffdfce.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/f15f209f2d385c0b325b181192c48ae716e73fcf75a8c14d4bd8538703ffdfce.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"3d scatter plot","caption_source":"content.json:img_caption"},"width":505,"height":442,"image_format":"jpeg","image_sha256":"48c2269aed17d81ab39416e1f6060ff4cf04d71a93225707e3a9e4a550352fd1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_fig_6.jpg","caption":"Fig. 6 - Mass change over time during 3 cycles with purge time of $30s$ . (b) Data set for Step B generated from the microscopic model. Fig. 7 - Data points collected for Step A and Step B at various operating conditions.","id":"test/atomic-layer-etching/simulation-usecase/11/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/11/fig_6","subset":"3d-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"3d scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"3D scatter plot of kMC simulation results for Step B (TMA etching) showing half-cycle time as a function of temperature (533-598 K) and pressure (10-100 Pa). The data reveals strong dependencies on both parameters: half-cycle times range from approximately 2 s at high temperature/pressure to over 20 s at low temperature. This dataset was used to train the FNN model for Step B.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (K) | Pressure (Pa) | Time (s) |\\n|----------------|---------------|----------|\\n| 520 | 20 | 38 |\\n| 540 | 20 | 36 |\\n| 560 | 20 | 34 |\\n| 580 | 20 | 32 |\\n| 600 | 20 | 30 |\\n| 520 | 40 | 28 |\\n| 540 | 40 | 26 |\\n| 560 | 40 | 24 |\\n| 580 | 40 | 22 |\\n| 600 | 40 | 20 |\\n| 520 | 60 | 18 |\\n| 540 | 60 | 16 |\\n| 560 | 60 | 14 |\\n| 580 | 60 | 12 |\\n| 600 | 60 | 10 |\\n| 520 | 80 | 8 |\\n| 540 | 80 | 6 |\\n| 560 | 80 | 4 |\\n| 580 | 80 | 2 |\\n| 600 | 80 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both parameters significantly influence Step B half-cycle time. Temperature has the dominant effect: at low temperatures (~533 K), times exceed 20 s, while at high temperatures (~598 K), times drop to around 2-3 s, reflecting Arrhenius kinetics. Pressure also matters for Step B because TMA adsorption kinetics depend on partial pressure. Higher pressures accelerate the secondary TMA adsorption step, reducing half-cycle time. This dual dependence contrasts with Step A, which is largely pressure-independent.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Data points were generated by running kMC simulations across temperature (533-598 K in 5 K intervals) and pressure (10-100 Pa in 5 Pa intervals), averaging 10 simulations per condition to reduce stochastic variation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Each kMC simulation takes approximately 20 minutes on average, and multiple simulations are averaged per operating condition to account for the inherent randomness of the Monte Carlo method.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Temperature in Kelvin (x-axis), Pressure in Pascals (y-axis), and half-cycle time in seconds (z-axis).\"}]}]","bbox":[{"panel_id":"a","x":3,"y":5,"width":502,"height":435}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"3d scatter plot","caption_source":"content.json:img_caption"},"width":505,"height":442,"image_format":"jpeg","image_sha256":"603a875cd5ef217aaada71e57748f1221ca1a573bfc898020fb0c95fdec8441f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_fig_8.jpg","caption":"Fig. 8 - Comparison of the kMC simulation data and of the predicted data calculated by the PIN for Steps A and B. Scatter (a) and line (b) plots of Step A represent a mean squared error of $0.0856\\%$ , which were calculated from $20\\%$ of the data points of the full kMC data set for Step A. Scatter (c) and line (d) plots of Step B represent a mean squared error of $0.175\\%$ , which were calculated from $20\\%$ of the data points of the full kMC data set for Step B.","id":"test/atomic-layer-etching/simulation-usecase/11/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/11/fig_8","subset":"3d-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"3d scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"3d scatter plot"},{"panel_id":"d","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Scatter plot comparing kMC simulation data (red) with FNN-predicted data (blue) for Step A (HF fluorination) across different operating conditions. The close overlap of red and blue points demonstrates excellent model agreement.\"},{\"panel_id\":\"b\",\"text\":\"Parity plot for Step A showing FNN-predicted half-cycle time versus kMC simulation time. Points cluster tightly along the diagonal y=x line, indicating a mean squared error of only 0.0856% on the 20% test dataset.\"},{\"panel_id\":\"c\",\"text\":\"Scatter plot comparing kMC simulation data (red) with FNN-predicted data (blue) for Step B (TMA etching). The agreement is similarly strong, though with slightly more scatter at higher normalized times.\"},{\"panel_id\":\"d\",\"text\":\"Parity plot for Step B showing FNN-predicted versus simulated half-cycle times. The data closely follows the diagonal reference line with a mean squared error of 0.175%, slightly higher than Step A but still excellent.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Iteration Index | Top Band (Normalized Time, s) | Bottom Band (Normalized Time, s) |\\n|---|---|---|\\n| 0 | 2.40 | 0.60 |\\n| 25 | 2.40 | -0.80 |\\n| 50 | 2.42 | -0.90 |\\n| 75 | 2.45 | -0.90 |\\n| 100 | 2.50 | -0.90 |\\n| 150 | 2.60 | -0.90 |\\n| 200 | 2.70 | -0.90 |\\n| 250 | 2.80 | -0.90 |\"},{\"panel_id\":\"b\",\"text\":\"| Simulation Time (s) | Predicted Time (s) |\\n|---|---|\\n| -0.9 | -0.9 |\\n| 0.0 | 0.0 |\\n| 1.0 | 1.0 |\\n| 2.0 | 2.0 |\\n| 2.7 | 2.7 |\"},{\"panel_id\":\"c\",\"text\":\"| Iteration Index | Top Band (Normalized Time, s) | Bottom Band (Normalized Time, s) |\\n|---|---|---|\\n| 0 | 3.10 | 0.80 |\\n| 25 | 3.00 | -0.30 |\\n| 50 | 2.90 | -0.70 |\\n| 75 | 2.80 | -0.85 |\\n| 100 | 2.65 | -0.95 |\\n| 150 | 2.40 | -1.00 |\\n| 200 | 2.10 | -1.00 |\\n| 250 | 1.80 | -1.00 |\"},{\"panel_id\":\"d\",\"text\":\"| Simulation Time (s) | Predicted Time (s) |\\n|---|---|\\n| -1.0 | -1.0 |\\n| 0.0 | 0.0 |\\n| 1.0 | 1.0 |\\n| 2.0 | 2.0 |\\n| 3.0 | 3.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The FNN model dramatically reduces computation time while maintaining high accuracy. While kMC simulations require approximately 20 minutes per data point on average, the trained FNN predicts half-cycle times in less than one second. This speed enables real-time operational parameter calculations, which is essential for semiconductor manufacturing where batch half-cycles typically complete in under 5 seconds. The FNN also allows rapid screening of operating conditions without costly experiments.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"20% of the kMC data points were used for testing and validation, while the remaining 80% were used for training the FNN models.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The FNN model achieves slightly better accuracy for Step A than Step B. Step A (HF fluorination) shows a mean squared error of 0.0856%, while Step B (TMA etching) has a MSE of 0.175%. This difference likely reflects the greater complexity of Step B's reaction mechanism, which involves more reaction pathways including ligand exchange and DMAF desorption. Nevertheless, both models demonstrate excellent predictive capability with sub-1% errors.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A point on the diagonal indicates perfect agreement between the FNN-predicted half-cycle time and the kMC-simulated time.\"}]}]","bbox":[{"panel_id":"a","x":12,"y":0,"width":458,"height":384},{"panel_id":"b","x":548,"y":0,"width":468,"height":387},{"panel_id":"c","x":12,"y":426,"width":460,"height":380},{"panel_id":"d","x":536,"y":433,"width":480,"height":373}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"3d scatter plot","caption_source":"content.json:img_caption"},"width":1017,"height":809,"image_format":"jpeg","image_sha256":"81a19a6274ca23cb24bdcdaae12cd8251b223c75aa6718f116ecc8a243dc968b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/3d-scatter-plot/train/metadata.jsonl b/subsets/3d-scatter-plot/train/metadata.jsonl index 41365342d19eb24c1164af12b780e5706390752c..777e82c7cdb987f8cd986d5f2e2c4a89c2744d4c 100644 --- a/subsets/3d-scatter-plot/train/metadata.jsonl +++ b/subsets/3d-scatter-plot/train/metadata.jsonl @@ -1,5 +1,5 @@ -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_29_figure_10.jpg","caption":"Figure 10. AFM image of a $350\\mathrm{\\AA}$ thick tungsten nitride film deposited at $600~\\mathrm{K}$ after $140\\mathrm{AB}$ cycles on a $125\\mathrm{\\AA}$ thick $\\mathrm{SiO_2}$ film on $\\mathrm{Si}(100)$ . The reactant exposures of $12,000\\mathrm{L}\\mathrm{NH_3}$ and $4300\\mathrm{L}\\mathrm{WE_2}$ were sufficient for complete half-reactions during each AB cycle. The light-to-dark range is $25\\mathrm{\\AA}$ .","id":"train/atomic-layer-deposition/experimental-usecase/29/figure_10","sample_id":"atomic-layer-deposition/experimental-usecase/29/figure_10","subset":"3d-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"3d scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/J. W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"3d scatter plot","caption_source":"content.json:image_caption"},"width":683,"height":519,"image_format":"jpeg","image_sha256":"4d15477c997e8bf84ea41df2d602463ffed2a5179d1360a9f0f4457315188444","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":6,"width":676,"height":513}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_63_fig_4.jpg","caption":"FIG. 4. (Color online) 3D surface morphologies of (a) as-deposited $(250^{\\circ}\\mathrm{C})$ and (b) annealed $\\sim 26 \\mathrm{nm}$ thick $\\mathrm{Ga}_2\\mathrm{O}_3$ thin films.","id":"train/atomic-layer-deposition/experimental-usecase/63/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/63/fig_4","subset":"3d-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"3d scatter plot"},{"panel_id":"b","label":"3d scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/Donmez et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"63","first_classification_panel_id":"a","first_classification_label":"3d scatter plot","caption_source":"content.json:image_caption"},"width":642,"height":786,"image_format":"jpeg","image_sha256":"41c2b92e624d68da87e702841311b2ef087c704c734547bc3e5b40f78b293411","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":0,"width":635,"height":388},{"panel_id":"b","x":6,"y":402,"width":632,"height":381}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"3D AFM surface topography of the as deposited Ga2O3 film (about 26 nm, deposited at 250 C), shown over a 1 µm by 1 µm scan area with height contrast in nm. The reported rms roughness is 0.16 nm.\"},{\"panel_id\":\"b\",\"text\":\"3D AFM surface topography of the annealed Ga2O3 film (about 26 nm), shown over a 1 µm by 1 µm scan area with height contrast in nm. The reported rms roughness increases to 0.37 nm after annealing, consistent with a rougher, more grain like surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| x-axis | y-axis | z-axis |\\n|--------|--------|--------|\\n| 0.0 | 0.0 | 0.0 |\\n| 250.0 | 250.0 | 0.0 |\\n| 500.0 | 500.0 | 0.0 |\\n| 750.0 | 750.0 | 0.0 |\\n| 1000.0 | 1000.0 | 0.0 |\"},{\"panel_id\":\"b\",\"text\":\"| x-axis | y-axis | z-axis |\\n|--------|--------|--------|\\n| 0.0 | 0.0 | 0.0 |\\n| 250.0 | 250.0 | 0.0 |\\n| 500.0 | 500.0 | 0.0 |\\n| 750.0 | 750.0 | 0.0 |\\n| 1000.0 | 1000.0 | 0.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The color scale represents surface height in nm across the scanned area.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The rms roughness increases from 0.16 nm (as deposited) to 0.37 nm (annealed).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The paper attributes the roughness increase to grain formation during crystallization upon annealing. As grains form and grow, the surface develops larger height variations compared with the amorphous as deposited film. This interpretation links the morphology change directly to the structural transition induced by annealing.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increased roughness can affect interface quality when Ga2O3 is integrated with metals or semiconductors, because local thickness and contact area vary across the surface. Rougher surfaces can also increase scattering and raise leakage risk in thin insulating layers, depending on the device stack. In exchange, annealing can deliver the crystalline phase and associated property improvements, so roughness becomes a tradeoff to manage.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_13_figure_11.jpg","caption":"Figure 11. Atomic force microscopy (AFM) images of the surfaces etched using (a) ALE and (b) digital etching and (c) the as-grown surface before etching.","id":"train/atomic-layer-etching/experimental-usecase/13/figure_11","sample_id":"atomic-layer-etching/experimental-usecase/13/figure_11","subset":"3d-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"3d scatter plot"},{"panel_id":"b","label":"3d scatter plot"},{"panel_id":"c","label":"3d scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/Low-Damage and Self-Limiting (Al)GaN Etching Process.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"3d scatter plot","caption_source":"content.json:img_caption"},"width":1186,"height":798,"image_format":"jpeg","image_sha256":"5c5b1963b56929ede4c66d4fe42024c5680165bbee269dd74653a26c2b219aa3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":30,"width":563,"height":315},{"panel_id":"b","x":626,"y":11,"width":560,"height":312},{"panel_id":"c","x":296,"y":436,"width":542,"height":362}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_6.jpg","caption":"FIG. 6. (Color online) Surface morphology of the trench bottom for $\\Gamma_{i} / \\Gamma_{n} = (a)0.01$ b $10^{-3}$ and (c) $10^{-4}$ in the passivation step after 25 pulses (87.5 s etch time). The color bar indicates the profile height, with dark representing deeper etching and light representing higher features.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_6","subset":"3d-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"3d scatter plot"},{"panel_id":"b","label":"3d scatter plot"},{"panel_id":"c","label":"3d scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"3d scatter plot","caption_source":"content.json:img_caption"},"width":578,"height":1114,"image_format":"jpeg","image_sha256":"c73ead0e71dd35a25264c29156f3c541e48d52a4a2aa74129e15ddc0434c2e35","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":8,"width":574,"height":385},{"panel_id":"b","x":0,"y":388,"width":579,"height":341},{"panel_id":"c","x":1,"y":723,"width":576,"height":388}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows the surface morphology of the trench bottom for Γi/Γn = 0.01 in the passivation step after 25 pulses (87.5 s etch time).\"},{\"panel_id\":\"b\",\"text\":\"The image shows the surface morphology of the trench bottom for Γi/Γn = 10^-3 in the passivation step after 25 pulses (87.5 s etch time).\"},{\"panel_id\":\"c\",\"text\":\"The image shows the surface morphology of the trench bottom Γi/Γn = 10^-5i in the passivation step after 25 pulses (87.5 s etch time).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Image | Γᵢ/Γₙ Ratio | Surface Width (nm) | Height Scale |\\n|-------|-------------|----------------------|--------------|\\n| (a) | 0.01 | 25 | Low → High (Black → Red → Yellow) |\\n| (b) | 10⁻³ | 25 | Low → High (Black → Red → Yellow) |\\n| (c) | 10⁻⁴ | 25 | Low → High (Black → Red → Yellow) |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface for Γᵢ/Γₙ =10^-4 has a scattering of small divots caused by individual ion strikes and larger divots where several ion strikes stochastically occurred in close proximity during the same passivation step. The surface for Γᵢ/Γₙ=10^-3 has a similar pattern of larger divots, but with significantly more uniform roughening as well. The surface for Γᵢ/Γ=0.01 has few large divots with the surface being dominated by random roughness; however, the divots\\nwhich persist are larger and deeper.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There is a competition between a roughening process, produced by stochastic ion impacts during the passivation phase, and a smoothing process during the otherwise ideal ALE cycle\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The overall roughness increases as the ion to neutral flux ratio increases\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_8.jpg","caption":"FIG. 8. (Color online) Surface morphology of the trench bottom with $100\\mathrm{ppm}\\mathrm{Cl}_2$ in the ion bombardment step after 25 pulses (32 s etch time). The color bar indicates the profile height, with dark representing deeper etching and light representing higher features.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_8","subset":"3d-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"3d scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"3d scatter plot","caption_source":"content.json:img_caption"},"width":575,"height":447,"image_format":"jpeg","image_sha256":"10b781237ceb0fb2535052d1efb7ff2f8575938c6450449feb4987e9724b7b3d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":571,"height":441}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Surface morphology of the trench bottom with 100 ppm Cl2 in the ion bombardment step after 32 s etch time. The color bar indicates the profile height,\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Parameter | Value |\\n|------------------|-----------|\\n| Cl₂ concentration | 100 ppm |\\n| Surface width | 27 nm |\\n| Height scale | Low → High (color gradient: black → red → yellow) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface has the characteristic divots, but the surface is also slightly concave due to a higher etch rate in the center of the feature. This higher etch rate is due to a higher flux of Cl atoms incident onto the center of the feature. The concavity becomes more pronounced with longer etch times (more pulses).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface morphology generated by having a Cl flux during the ion bombardment phase differs slightly from when having an ion flux during the passivation phase. The height of the etched surface at the bottom of the AR=2 trench after 25 ALE pulses (32 s) shown in the image for the 100 ppm Cl2 case\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"27 nm\"}]}]"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_29_figure_10.jpg","caption":"Figure 10. AFM image of a $350\\mathrm{\\AA}$ thick tungsten nitride film deposited at $600~\\mathrm{K}$ after $140\\mathrm{AB}$ cycles on a $125\\mathrm{\\AA}$ thick $\\mathrm{SiO_2}$ film on $\\mathrm{Si}(100)$ . The reactant exposures of $12,000\\mathrm{L}\\mathrm{NH_3}$ and $4300\\mathrm{L}\\mathrm{WE_2}$ were sufficient for complete half-reactions during each AB cycle. The light-to-dark range is $25\\mathrm{\\AA}$ .","id":"train/atomic-layer-deposition/experimental-usecase/29/figure_10","sample_id":"atomic-layer-deposition/experimental-usecase/29/figure_10","subset":"3d-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"3d scatter plot"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":6,"width":676,"height":513}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/J. W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"3d scatter plot","caption_source":"content.json:image_caption"},"width":683,"height":519,"image_format":"jpeg","image_sha256":"4d15477c997e8bf84ea41df2d602463ffed2a5179d1360a9f0f4457315188444","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_63_fig_4.jpg","caption":"FIG. 4. (Color online) 3D surface morphologies of (a) as-deposited $(250^{\\circ}\\mathrm{C})$ and (b) annealed $\\sim 26 \\mathrm{nm}$ thick $\\mathrm{Ga}_2\\mathrm{O}_3$ thin films.","id":"train/atomic-layer-deposition/experimental-usecase/63/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/63/fig_4","subset":"3d-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"3d scatter plot"},{"panel_id":"b","label":"3d scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"3D AFM surface topography of the as deposited Ga2O3 film (about 26 nm, deposited at 250 C), shown over a 1 µm by 1 µm scan area with height contrast in nm. The reported rms roughness is 0.16 nm.\"},{\"panel_id\":\"b\",\"text\":\"3D AFM surface topography of the annealed Ga2O3 film (about 26 nm), shown over a 1 µm by 1 µm scan area with height contrast in nm. The reported rms roughness increases to 0.37 nm after annealing, consistent with a rougher, more grain like surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| x-axis | y-axis | z-axis |\\n|--------|--------|--------|\\n| 0.0 | 0.0 | 0.0 |\\n| 250.0 | 250.0 | 0.0 |\\n| 500.0 | 500.0 | 0.0 |\\n| 750.0 | 750.0 | 0.0 |\\n| 1000.0 | 1000.0 | 0.0 |\"},{\"panel_id\":\"b\",\"text\":\"| x-axis | y-axis | z-axis |\\n|--------|--------|--------|\\n| 0.0 | 0.0 | 0.0 |\\n| 250.0 | 250.0 | 0.0 |\\n| 500.0 | 500.0 | 0.0 |\\n| 750.0 | 750.0 | 0.0 |\\n| 1000.0 | 1000.0 | 0.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The color scale represents surface height in nm across the scanned area.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The rms roughness increases from 0.16 nm (as deposited) to 0.37 nm (annealed).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The paper attributes the roughness increase to grain formation during crystallization upon annealing. As grains form and grow, the surface develops larger height variations compared with the amorphous as deposited film. This interpretation links the morphology change directly to the structural transition induced by annealing.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increased roughness can affect interface quality when Ga2O3 is integrated with metals or semiconductors, because local thickness and contact area vary across the surface. Rougher surfaces can also increase scattering and raise leakage risk in thin insulating layers, depending on the device stack. In exchange, annealing can deliver the crystalline phase and associated property improvements, so roughness becomes a tradeoff to manage.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":0,"width":635,"height":388},{"panel_id":"b","x":6,"y":402,"width":632,"height":381}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/Donmez et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"63","first_classification_panel_id":"a","first_classification_label":"3d scatter plot","caption_source":"content.json:image_caption"},"width":642,"height":786,"image_format":"jpeg","image_sha256":"41c2b92e624d68da87e702841311b2ef087c704c734547bc3e5b40f78b293411","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_13_figure_11.jpg","caption":"Figure 11. Atomic force microscopy (AFM) images of the surfaces etched using (a) ALE and (b) digital etching and (c) the as-grown surface before etching.","id":"train/atomic-layer-etching/experimental-usecase/13/figure_11","sample_id":"atomic-layer-etching/experimental-usecase/13/figure_11","subset":"3d-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"3d scatter plot"},{"panel_id":"b","label":"3d scatter plot"},{"panel_id":"c","label":"3d scatter plot"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":30,"width":563,"height":315},{"panel_id":"b","x":626,"y":11,"width":560,"height":312},{"panel_id":"c","x":296,"y":436,"width":542,"height":362}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/Low-Damage and Self-Limiting (Al)GaN Etching Process.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"3d scatter plot","caption_source":"content.json:img_caption"},"width":1186,"height":798,"image_format":"jpeg","image_sha256":"5c5b1963b56929ede4c66d4fe42024c5680165bbee269dd74653a26c2b219aa3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_6.jpg","caption":"FIG. 6. (Color online) Surface morphology of the trench bottom for $\\Gamma_{i} / \\Gamma_{n} = (a)0.01$ b $10^{-3}$ and (c) $10^{-4}$ in the passivation step after 25 pulses (87.5 s etch time). The color bar indicates the profile height, with dark representing deeper etching and light representing higher features.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_6","subset":"3d-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"3d scatter plot"},{"panel_id":"b","label":"3d scatter plot"},{"panel_id":"c","label":"3d scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows the surface morphology of the trench bottom for Γi/Γn = 0.01 in the passivation step after 25 pulses (87.5 s etch time).\"},{\"panel_id\":\"b\",\"text\":\"The image shows the surface morphology of the trench bottom for Γi/Γn = 10^-3 in the passivation step after 25 pulses (87.5 s etch time).\"},{\"panel_id\":\"c\",\"text\":\"The image shows the surface morphology of the trench bottom Γi/Γn = 10^-5i in the passivation step after 25 pulses (87.5 s etch time).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Image | Γᵢ/Γₙ Ratio | Surface Width (nm) | Height Scale |\\n|-------|-------------|----------------------|--------------|\\n| (a) | 0.01 | 25 | Low → High (Black → Red → Yellow) |\\n| (b) | 10⁻³ | 25 | Low → High (Black → Red → Yellow) |\\n| (c) | 10⁻⁴ | 25 | Low → High (Black → Red → Yellow) |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface for Γᵢ/Γₙ =10^-4 has a scattering of small divots caused by individual ion strikes and larger divots where several ion strikes stochastically occurred in close proximity during the same passivation step. The surface for Γᵢ/Γₙ=10^-3 has a similar pattern of larger divots, but with significantly more uniform roughening as well. The surface for Γᵢ/Γ=0.01 has few large divots with the surface being dominated by random roughness; however, the divots\\nwhich persist are larger and deeper.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There is a competition between a roughening process, produced by stochastic ion impacts during the passivation phase, and a smoothing process during the otherwise ideal ALE cycle\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The overall roughness increases as the ion to neutral flux ratio increases\"}]}]","bbox":[{"panel_id":"a","x":3,"y":8,"width":574,"height":385},{"panel_id":"b","x":0,"y":388,"width":579,"height":341},{"panel_id":"c","x":1,"y":723,"width":576,"height":388}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"3d scatter plot","caption_source":"content.json:img_caption"},"width":578,"height":1114,"image_format":"jpeg","image_sha256":"c73ead0e71dd35a25264c29156f3c541e48d52a4a2aa74129e15ddc0434c2e35","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_8.jpg","caption":"FIG. 8. (Color online) Surface morphology of the trench bottom with $100\\mathrm{ppm}\\mathrm{Cl}_2$ in the ion bombardment step after 25 pulses (32 s etch time). The color bar indicates the profile height, with dark representing deeper etching and light representing higher features.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_8","subset":"3d-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"3d scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Surface morphology of the trench bottom with 100 ppm Cl2 in the ion bombardment step after 32 s etch time. The color bar indicates the profile height,\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Parameter | Value |\\n|------------------|-----------|\\n| Cl₂ concentration | 100 ppm |\\n| Surface width | 27 nm |\\n| Height scale | Low → High (color gradient: black → red → yellow) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface has the characteristic divots, but the surface is also slightly concave due to a higher etch rate in the center of the feature. This higher etch rate is due to a higher flux of Cl atoms incident onto the center of the feature. The concavity becomes more pronounced with longer etch times (more pulses).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface morphology generated by having a Cl flux during the ion bombardment phase differs slightly from when having an ion flux during the passivation phase. The height of the etched surface at the bottom of the AR=2 trench after 25 ALE pulses (32 s) shown in the image for the 100 ppm Cl2 case\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"27 nm\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":571,"height":441}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"3d scatter plot","caption_source":"content.json:img_caption"},"width":575,"height":447,"image_format":"jpeg","image_sha256":"10b781237ceb0fb2535052d1efb7ff2f8575938c6450449feb4987e9724b7b3d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/apparatus-diagram/test/metadata.jsonl b/subsets/apparatus-diagram/test/metadata.jsonl index f8b5ee2db46fe26805c47954451efee421a31b49..857a0a2422458cabbadea2ef09faac2bf5ff9186 100644 --- a/subsets/apparatus-diagram/test/metadata.jsonl +++ b/subsets/apparatus-diagram/test/metadata.jsonl @@ -1,20 +1,20 @@ -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_1.jpg","caption":"Figure 1. Diagram of the viscous-flow reactor used for low-temperature $\\mathrm{Al_2O_3}$ ALD. A special flow tube was employed to accommodate a $510 - \\mathrm{mL}$ PET bottle. A nitrogen purge line was used to suspend and pressurize the PET bottle during $\\mathrm{Al_2O_3}$ ALD.","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_1","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":669,"height":306,"image_format":"jpeg","image_sha256":"8a0a4fbeb6ca2473b583b177721c8853ee0e6399b55980b3520e919e2785ab0b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":306}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_3.jpg","caption":"FIG. 3. Reactor layout as used in the first plasma-assisted ALD experiments (Philips Research Laboratories, Eindhoven) reported in the literature Ref. 111. An $\\mathrm{H}_2$ plasma was generated by means of a remote microwave-induced plasma source in a quartz tube. The H radicals assisted in the atomic layer epitaxy (ALE) process of GaAs. Reprinted from M. de Keijser and C. van Opdorp, Appl. Phys. Lett. 58, 1188 (1991). Copyright 1991, American Institute of Physics.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_3","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":545,"height":606,"image_format":"jpeg","image_sha256":"40b7ba1acc93bc5ab2153647e0491db7defd6798c4920341f805c7d808c11d93","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":545,"height":606}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_7.jpg","caption":"FIG. 7. (Color online) Various reactor configurations for plasma-assisted ALD (Ref. 136): (a) radical-enhanced ALD, (b) direct plasma-assisted ALD, (c) remote plasma ALD, and (d) direct plasma reactor with mesh. The reactor layouts and plasma sources shown serve only as examples. Reprinted with permission from S.B.S. Heil et al., J. Vac. Sci. Technol. A 25, 1357 (2007). Copyright 2007 American Vacuum Society.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_7","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"},{"panel_id":"c","label":"apparatus diagram"},{"panel_id":"d","label":"apparatus diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":650,"height":661,"image_format":"jpeg","image_sha256":"d8b73c6a6c82076588c31159e25ab6d8888318b0dc432cc7c7657c0d888d45ac","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":62,"width":372,"height":200},{"panel_id":"b","x":399,"y":21,"width":251,"height":290},{"panel_id":"c","x":10,"y":319,"width":263,"height":342},{"panel_id":"d","x":391,"y":355,"width":259,"height":290}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_24_figure_1.jpg","caption":"Figure 1. ALD reactor and QMS setup.","id":"test/atomic-layer-deposition/experimental-usecase/24/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/24/figure_1","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/Martin Rose et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":608,"height":331,"image_format":"jpeg","image_sha256":"fe6c36024a4a2aa0125c5a73f2b0272a1013df910203492e7ebabdc4745130cc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":1,"width":600,"height":330}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_3_figure_1.jpg","caption":"Figure 1. Schematic diagram of the deposition system showing the location of the nitrogen mass flow controllers $(\\mathbb{N}_2)$ the water vapor reservoir $(\\mathrm{H_2O})$ , the metal precursor reservoir (Metal Precursor), the three-way gas-chromatography valve, the two two-way diaphragm valves, the metal precursor dose volume (V), the pressure measurement location (P), and the rotary vane pump (Pump) with respect to the precursor [T(precursors)] and deposition [T(deposition)] heating zones.","id":"test/atomic-layer-deposition/experimental-usecase/3/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/3/figure_1","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/Hausmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":592,"height":350,"image_format":"jpeg","image_sha256":"9cb34746acd1149dde119cab6e42bee1ae9b8179dc2b2e30818a5a3f654b88c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":592,"height":350}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_39_fig_1.jpg","caption":"FIG. 1. (Color online) (a) Schematic of the homebuilt remote plasma ALD reactor \"ALD-I\" with the in situ diagnostics indicated. (b) Schematic layout of the plasma-assisted ALD cycle for $\\mathrm{Al}_2\\mathrm{O}_3$ deposition. The precursor dosing by several successive, small $\\mathrm{Al(CH_3)_3}$ exposures per cycle is indicated.","id":"test/atomic-layer-deposition/experimental-usecase/39/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/39/fig_1","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"process timing diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/Heil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":675,"height":958,"image_format":"jpeg","image_sha256":"e49bead2b2fa58795b66e647cc5d66475dfb3959369dcc14b448bb2a8d37d014","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":1,"width":664,"height":662},{"panel_id":"b","x":4,"y":694,"width":664,"height":259}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_56_figure_4.jpg","caption":"Figure 4. Investigation of conformality of the LiPON process at $275^{\\circ}C$ using a plasma power of 100w. Micropillars of $50\\mu \\mathrm{m}$ high and a diameter of $2\\mu \\mathrm{m}$ are used for this purpose. The pillars are coated with a $30~\\mathrm{nm}$ TiN layer on top of which a $90~\\mathrm{nm}$ layer of LiPON was deposited. Images (a), (b) and (c) show the LiPON/TiN layer at respectively the top, middle and bottom of the pillars. Good conformality is obtained for the process, showing a thickness variation from 90 to $70~\\mathrm{nm}$","id":"test/atomic-layer-deposition/experimental-usecase/56/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/56/figure_4","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/Put et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":1009,"height":592,"image_format":"jpeg","image_sha256":"af5e8facf6aee17480889ef3aea46da8b100a4e908df6cb25be941a1a903fab7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":594,"y":3,"width":796,"height":578},{"panel_id":"b","x":594,"y":3,"width":796,"height":578},{"panel_id":"c","x":594,"y":3,"width":796,"height":578},{"panel_id":"d","x":1,"y":0,"width":393,"height":591}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_61_a8dbd6fd768f58b83ec9c7d3ebad5595d89b75b4e61560985c2c7898c169f079.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/61/a8dbd6fd768f58b83ec9c7d3ebad5595d89b75b4e61560985c2c7898c169f079","sample_id":"atomic-layer-deposition/experimental-usecase/61/a8dbd6fd768f58b83ec9c7d3ebad5595d89b75b4e61560985c2c7898c169f079","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/a8dbd6fd768f58b83ec9c7d3ebad5595d89b75b4e61560985c2c7898c169f079.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/a8dbd6fd768f58b83ec9c7d3ebad5595d89b75b4e61560985c2c7898c169f079.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/Vos et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"61","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"not_found"},"width":669,"height":334,"image_format":"jpeg","image_sha256":"1f8d59275c51474ac645cd51031871375321fff1efc415e470ed1b0d7f1436b4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":334}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_62_fig_1.jpg","caption":"FIG. 1. (Color online) (a) Schematic representation of the Oxford Instruments FlexAL reactor for plasma-assisted atomic layer deposition (Ref. 24) on which the OES equipment is implemented. The optical emission signal can either be obtained at the top of the plasma source (as indicated in the figure) or in the downstream region. (b) Photograph of the upper part of the FlexAL reactor showing the ICP plasma source, the top of the chamber, and the gate valve in between the chamber and the plasma source. The OES spectrometer (Ocean Optics USB4000, bottom left) is connected with an optical fiber to a window installed on a vacuum port in the downstream region.","id":"test/atomic-layer-deposition/experimental-usecase/62/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/62/fig_1","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/Mackus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"62","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":475,"height":1088,"image_format":"jpeg","image_sha256":"fedbd72599a648252538d01066f7b9a275a2f4a52722607a8e6375b55bdb56ea","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":11,"y":5,"width":454,"height":513},{"panel_id":"b","x":0,"y":516,"width":469,"height":573}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A detailed diagram of a vacuum chamber setup including components like plasma source, optical emission spectrometer, ellipsometer, precursor injection, and turbo-pump.\"},{\"panel_id\":\"b\",\"text\":\"A photograph of a vacuum chamber, with plasma source and optical emission spectrometer.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Precursor gases are injected from the top, such that by defenition they will flow over a sample.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The used plasma source is a remote source. The plasma is generated between the visible coils and is not connected to a biased table.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Between the reactor chamber and turbo-pump a butterfly valve is visible. Such a valve gives good control on the flows and pressures in the reactor chamber during processing.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, ligands can diffuse in the plasma, visible for the OES.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG1.jpg","caption":"FIG. 1. Diagram of the remote inductively coupled plasma source in the PEALD system used in this work. The figure highlights the different locations characterized by the OES (remote plasma source) and Langmuir probe (downstream of the remote plasma near sample stage).","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG1","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG1","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":653,"height":708,"image_format":"jpeg","image_sha256":"2d168eb5124a783913e9edeedcdeb52e8646123166a34fed50f4b36bb12ba342","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":653,"height":708}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_20_fig_1.jpg","caption":"Fig. 1. (a) stack-type multi-wafer batch ALD reactor [7]; (b) in-line spatial ALD reactor [8,10]; and (c) rotary spatial ALD reactor.","id":"test/atomic-layer-deposition/simulation-usecase/20/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/20/fig_1","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"},{"panel_id":"c","label":"apparatus diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/Dongqing Pan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":1042,"height":714,"image_format":"jpeg","image_sha256":"240e21ff5b809ee1c40bc6d9f5f05620f864f56e68dee594317ba5966c881bd8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":3,"width":334,"height":708},{"panel_id":"b","x":351,"y":0,"width":686,"height":306},{"panel_id":"c","x":366,"y":304,"width":657,"height":409}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic of a stack-type batch ALD reactor where multiple wafers are arranged vertically, with gas inlet at the top and exhaust at the bottom, allowing simultaneous processing of multiple substrates.\"},{\"panel_id\":\"b\",\"text\":\"Cross-sectional diagram of an in-line spatial ALD reactor showing precursor dosing cylinders (Precursor A, Precursor B), separating gas injectors, exhaust ports, pumping manifold, and the gap between the gas delivery head and the moving wafer.\"},{\"panel_id\":\"c\",\"text\":\"Top-down view of a rotary spatial ALD reactor where the wafer rotates beneath fixed precursor injection points (A and B) separated by inert gas curtains, with multiple exhaust ports arranged radially.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the batch ALD reactor (a), precursors are separated in time through sequential dosing and purging steps, with all wafers exposed to the same gas simultaneously. In contrast, the spatial ALD reactors (b) and (c) separate precursors in space rather than time, with different precursor zones maintained by inert gas curtains and exhaust pumping. This allows continuous deposition without purging steps, dramatically increasing throughput from nm/min to nm/s.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In-line spatial ALD (b): linear wafer belt movement beneath stationary gas injectors. Rotary spatial ALD (c): wafer rotation beneath fixed precursor injection points arranged in a circular pattern.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The separating gas (typically nitrogen or argon) creates an inert gas curtain between the precursor zones to prevent intermixing of precursor A and precursor B, which would cause unwanted CVD-type reactions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The gap is the space between the bottom of the gas dosing cylinders and the top surface of the moving wafer, which allows gas flow development and wafer movement.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_20_fig_2.jpg","caption":"Fig. 2. 3D computational domain of in-line spatial ALD reactor: (a) fluid domain in the two precursor dosing cylinders, one separating gas injecting cylinder, two exhaust cylinders, and the gap spaces between each arrangement, dimension scale in meters, and (b) center slice of the 3D domain. A, B, C and D are the probing points for the flow or chemical deposition analysis.","id":"test/atomic-layer-deposition/simulation-usecase/20/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/20/fig_2","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/Dongqing Pan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":666,"height":959,"image_format":"jpeg","image_sha256":"13e7f6efe5804ba477b1302f6715135bc283aa18b6da9238ec9d0a7b11065715","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":657,"height":471},{"panel_id":"b","x":9,"y":474,"width":641,"height":482}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"3D computational domain of the in-line spatial ALD reactor showing the meshed fluid volume, including water and TMA precursor dosing cylinders, nitrogen separating gas cylinder, two exhaust cylinders, and the gap region between the gas delivery head and wafer surface. Scale bar indicates dimensions in meters.\"},{\"panel_id\":\"b\",\"text\":\"Center slice (2D cross-section) of the 3D computational domain showing the wafer top surface (yellow) and four probing points (A, B, C, D) used to monitor precursor concentrations and surface deposition rates during simulations.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A non-structural tetrahedral mesh, as stated in the paper for finite volume method (FVM) calculations.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Water precursor, exhaust, nitrogen (separating gas), exhaust, TMA precursor.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Because each half-reaction occurs under a separate precursor cylinder, and a wafer position must pass through both zones (water and TMA) to complete one full ALD deposition cycle.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Points A and D are located under the water and TMA dosing cylinders respectively, and are used to probe surface deposition rates during simulations. Points B and C are positioned in the exhaust regions between precursor zones and are used to monitor precursor concentrations for studying intermixing. This arrangement allows tracking of both chemical deposition kinetics and gas transport behavior.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_3_fig_1.jpg","caption":"FIG. 1. (Color online) Cambridge Nanotech Savannah S100 ALD system consists of precursor cylinders, precursor manifold, carrier gas manifold, chamber, outlet manifold, and a vacuum pump (not shown in the figure).","id":"test/atomic-layer-deposition/simulation-usecase/3/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/3/fig_1","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/Dongqing Pan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":636,"height":637,"image_format":"jpeg","image_sha256":"6f8ce369d415093f9ea1ae2f1ae0610149f423b53f6ad86ffbd14c21b1889059","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":634,"height":632}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"3D schematic of the Cambridge NanoTech Savannah S100 ALD system used for Al₂O₃ deposition with TMA and water precursors. Key components include precursor cylinders at the bottom, stop valves for millisecond pulse control, a carrier gas manifold for nitrogen flow (20 sccm), a heated circular chamber (150 mm diameter, 100–250°C range), and an outlet to a vacuum pump maintaining ~0.30 Torr background pressure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Precursors are stored in separate cylinders at room temperature and injected by their own vapor pressure (9.43 Torr for TMA, 23.68 Torr for water). Stop valves control brief 0.015 s pulses, while nitrogen carrier gas continuously flows through the system and a vacuum pump maintains low background pressure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"225°C (with setpoint 224°C visible in red).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The chamber is designed for substrates up to 100 mm diameter.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"(1) Transport precursor vapors into the chamber, (2) purge excess precursors between pulses, and (3) remove reaction byproducts (CH₄) during the purge steps.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_3_fig_2.jpg","caption":"FIG. 2. (Color online) 3D computational domain in the numerical model is based on S100 ALD reactor system. There are three inlets, one outlet, and surface reactions are enabled only on the chamber bottom wall.","id":"test/atomic-layer-deposition/simulation-usecase/3/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/3/fig_2","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/Dongqing Pan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":608,"height":306,"image_format":"jpeg","image_sha256":"75b4e3d2143a1443b12f27d955e953fae0af27c6ef2210bb30faed31629fcd83","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":605,"height":306}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The diagram illustrates a chamber setup with nitrogen, water, and TMA entering the chamber, and emissions exiting\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Only on the chamber bottom wall, where the wafer substrates are placed.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The computational mesh used for finite volume method (FVM) discretization in the CFD simulation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Three inlets (nitrogen, TMA, water) and one outlet (emissions).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In actual ALD processes, materials deposit on all inner surfaces of the system. However, for computational simplicity and efficiency, the numerical model restricts deposition reactions to the chamber bottom where wafers are placed. This allows focused study of film growth on substrates without the computational cost of tracking reactions on all surfaces.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_1_19bfc346b255b3a12f45595eb85f2739bbe244255663e6cbd2b1a7f2dff5da9a.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/1/19bfc346b255b3a12f45595eb85f2739bbe244255663e6cbd2b1a7f2dff5da9a","sample_id":"atomic-layer-etching/experimental-usecase/1/19bfc346b255b3a12f45595eb85f2739bbe244255663e6cbd2b1a7f2dff5da9a","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/19bfc346b255b3a12f45595eb85f2739bbe244255663e6cbd2b1a7f2dff5da9a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/19bfc346b255b3a12f45595eb85f2739bbe244255663e6cbd2b1a7f2dff5da9a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/Atomic Layer Etching An Industry Perspective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"not_found"},"width":472,"height":302,"image_format":"jpeg","image_sha256":"3b27a6fc3d55e8b584514ab40366412983567f542b23df47d3da8e0da3ddd132","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":472,"height":302}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_1_95f587058949aa3ccee2e23f78a3ff8af30f886313a1780fcaea0b6bdbb62931.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/1/95f587058949aa3ccee2e23f78a3ff8af30f886313a1780fcaea0b6bdbb62931","sample_id":"atomic-layer-etching/experimental-usecase/1/95f587058949aa3ccee2e23f78a3ff8af30f886313a1780fcaea0b6bdbb62931","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/95f587058949aa3ccee2e23f78a3ff8af30f886313a1780fcaea0b6bdbb62931.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/95f587058949aa3ccee2e23f78a3ff8af30f886313a1780fcaea0b6bdbb62931.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/Atomic Layer Etching An Industry Perspective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"not_found"},"width":434,"height":133,"image_format":"jpeg","image_sha256":"173d150634e3a9918d95b592c498924ec5d4afda0f8a0c3de9fe63205ad803fe","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":434,"height":133}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_2.jpg","caption":"Figure 2. Schematic showing ellipsometer beam interacting with film stack comprised of $\\mathrm{WO}_3$ , W, $\\mathrm{Al}_2\\mathrm{O}_3$ , $\\mathrm{SiO}_2$ , and underlying Si substrate.","id":"test/atomic-layer-etching/experimental-usecase/25/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_2","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":673,"height":453,"image_format":"jpeg","image_sha256":"45236f8af88e56444f250ec71221e8665aa12ff2363a5210764ea688a013df5c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":3,"width":665,"height":443}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_37_fig_1.jpg","caption":"FIG. 1. Simplified schematic representation of deposition chamber used in this work, including the gas-delivery lines setup, pumping system, and attached spectroscopic ellipsometer.","id":"test/atomic-layer-etching/experimental-usecase/37/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/37/fig_1","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/Effect of reactant dosing on selectivity during area-selective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":667,"height":603,"image_format":"jpeg","image_sha256":"4b25b0100c4243a262bce2f0cc18ebe802a2fcb5f6c787324948e2454c50cd02","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":667,"height":603}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_41_fig_1.jpg","caption":"FIG. 1. (a) Schematic diagram of a cylindrical ICP reactor with halogen lamps and (b) the description of the TiN ALE process using oxidation in $\\mathrm{O_2}$ plasma, fluorination in $\\mathrm{CF_4}$ plasma, and removal step by the heating method.","id":"test/atomic-layer-etching/experimental-usecase/41/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/41/fig_1","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"process timing diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/Plasma atomic layer etching for titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":675,"height":816,"image_format":"jpeg","image_sha256":"767ffe038f6bd8f806a595df3e3a7d5ca0b84a45d9ba76c014abaa330fe21409","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":62,"width":664,"height":275},{"panel_id":"b","x":39,"y":457,"width":615,"height":355}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure shows a schematic of a cylindrical inductively coupled plasma (ICP) reactor used for TiN ALE experiments. It includes the gas inlet and exhaust, wafer position, halogen lamp heating system, and thermocouple, illustrating the physical configuration of the experimental setup.\"},{\"panel_id\":\"b\",\"text\":\"The subfigure shows a process timing diagram for the TiN atomic layer etching cycle. It details the sequential oxidation (O₂ plasma), fluorination (CF₄ plasma), and removal (thermal heating) steps, along with purge periods, operating pressures, temperatures, and step durations arranged along a time axis.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The cycle begins with oxidation using an O₂ plasma to modify the TiN surface. This is followed by fluorination with a CF₄ plasma, which introduces fluorine into the modified layer. Finally, a thermal heating step removes the reaction products, completing one ALE cycle before the next repetition.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"CF₄ plasma.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thermal heating.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_8607573f81baedd4df529ad3c7366f2a052ccbf20c1234c4624e7d119b4cf3ce.jpg","caption":"(a)","id":"test/atomic-layer-etching/simulation-usecase/34/8607573f81baedd4df529ad3c7366f2a052ccbf20c1234c4624e7d119b4cf3ce","sample_id":"atomic-layer-etching/simulation-usecase/34/8607573f81baedd4df529ad3c7366f2a052ccbf20c1234c4624e7d119b4cf3ce","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/8607573f81baedd4df529ad3c7366f2a052ccbf20c1234c4624e7d119b4cf3ce.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/8607573f81baedd4df529ad3c7366f2a052ccbf20c1234c4624e7d119b4cf3ce.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":583,"height":161,"image_format":"jpeg","image_sha256":"7d121e8e934fb0b7aea9b4ffefb3d43a3767f30f9c9eddbc66c75f52acb8ede2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":583,"height":161}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_1.jpg","caption":"Figure 1. Diagram of the viscous-flow reactor used for low-temperature $\\mathrm{Al_2O_3}$ ALD. A special flow tube was employed to accommodate a $510 - \\mathrm{mL}$ PET bottle. A nitrogen purge line was used to suspend and pressurize the PET bottle during $\\mathrm{Al_2O_3}$ ALD.","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_1","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":306}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":669,"height":306,"image_format":"jpeg","image_sha256":"8a0a4fbeb6ca2473b583b177721c8853ee0e6399b55980b3520e919e2785ab0b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_3.jpg","caption":"FIG. 3. Reactor layout as used in the first plasma-assisted ALD experiments (Philips Research Laboratories, Eindhoven) reported in the literature Ref. 111. An $\\mathrm{H}_2$ plasma was generated by means of a remote microwave-induced plasma source in a quartz tube. The H radicals assisted in the atomic layer epitaxy (ALE) process of GaAs. Reprinted from M. de Keijser and C. van Opdorp, Appl. Phys. Lett. 58, 1188 (1991). Copyright 1991, American Institute of Physics.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_3","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":545,"height":606}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":545,"height":606,"image_format":"jpeg","image_sha256":"40b7ba1acc93bc5ab2153647e0491db7defd6798c4920341f805c7d808c11d93","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_7.jpg","caption":"FIG. 7. (Color online) Various reactor configurations for plasma-assisted ALD (Ref. 136): (a) radical-enhanced ALD, (b) direct plasma-assisted ALD, (c) remote plasma ALD, and (d) direct plasma reactor with mesh. The reactor layouts and plasma sources shown serve only as examples. Reprinted with permission from S.B.S. Heil et al., J. Vac. Sci. Technol. A 25, 1357 (2007). Copyright 2007 American Vacuum Society.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_7","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"},{"panel_id":"c","label":"apparatus diagram"},{"panel_id":"d","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":62,"width":372,"height":200},{"panel_id":"b","x":399,"y":21,"width":251,"height":290},{"panel_id":"c","x":10,"y":319,"width":263,"height":342},{"panel_id":"d","x":391,"y":355,"width":259,"height":290}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":650,"height":661,"image_format":"jpeg","image_sha256":"d8b73c6a6c82076588c31159e25ab6d8888318b0dc432cc7c7657c0d888d45ac","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_24_figure_1.jpg","caption":"Figure 1. ALD reactor and QMS setup.","id":"test/atomic-layer-deposition/experimental-usecase/24/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/24/figure_1","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":1,"width":600,"height":330}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/Martin Rose et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":608,"height":331,"image_format":"jpeg","image_sha256":"fe6c36024a4a2aa0125c5a73f2b0272a1013df910203492e7ebabdc4745130cc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_3_figure_1.jpg","caption":"Figure 1. Schematic diagram of the deposition system showing the location of the nitrogen mass flow controllers $(\\mathbb{N}_2)$ the water vapor reservoir $(\\mathrm{H_2O})$ , the metal precursor reservoir (Metal Precursor), the three-way gas-chromatography valve, the two two-way diaphragm valves, the metal precursor dose volume (V), the pressure measurement location (P), and the rotary vane pump (Pump) with respect to the precursor [T(precursors)] and deposition [T(deposition)] heating zones.","id":"test/atomic-layer-deposition/experimental-usecase/3/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/3/figure_1","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":592,"height":350}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/Hausmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":592,"height":350,"image_format":"jpeg","image_sha256":"9cb34746acd1149dde119cab6e42bee1ae9b8179dc2b2e30818a5a3f654b88c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_39_fig_1.jpg","caption":"FIG. 1. (Color online) (a) Schematic of the homebuilt remote plasma ALD reactor \"ALD-I\" with the in situ diagnostics indicated. (b) Schematic layout of the plasma-assisted ALD cycle for $\\mathrm{Al}_2\\mathrm{O}_3$ deposition. The precursor dosing by several successive, small $\\mathrm{Al(CH_3)_3}$ exposures per cycle is indicated.","id":"test/atomic-layer-deposition/experimental-usecase/39/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/39/fig_1","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"process timing diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":1,"width":664,"height":662},{"panel_id":"b","x":4,"y":694,"width":664,"height":259}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/Heil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":675,"height":958,"image_format":"jpeg","image_sha256":"e49bead2b2fa58795b66e647cc5d66475dfb3959369dcc14b448bb2a8d37d014","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_56_figure_4.jpg","caption":"Figure 4. Investigation of conformality of the LiPON process at $275^{\\circ}C$ using a plasma power of 100w. Micropillars of $50\\mu \\mathrm{m}$ high and a diameter of $2\\mu \\mathrm{m}$ are used for this purpose. The pillars are coated with a $30~\\mathrm{nm}$ TiN layer on top of which a $90~\\mathrm{nm}$ layer of LiPON was deposited. Images (a), (b) and (c) show the LiPON/TiN layer at respectively the top, middle and bottom of the pillars. Good conformality is obtained for the process, showing a thickness variation from 90 to $70~\\mathrm{nm}$","id":"test/atomic-layer-deposition/experimental-usecase/56/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/56/figure_4","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":594,"y":3,"width":796,"height":578},{"panel_id":"b","x":594,"y":3,"width":796,"height":578},{"panel_id":"c","x":594,"y":3,"width":796,"height":578},{"panel_id":"d","x":1,"y":0,"width":393,"height":591}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/Put et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":1009,"height":592,"image_format":"jpeg","image_sha256":"af5e8facf6aee17480889ef3aea46da8b100a4e908df6cb25be941a1a903fab7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_61_a8dbd6fd768f58b83ec9c7d3ebad5595d89b75b4e61560985c2c7898c169f079.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/61/a8dbd6fd768f58b83ec9c7d3ebad5595d89b75b4e61560985c2c7898c169f079","sample_id":"atomic-layer-deposition/experimental-usecase/61/a8dbd6fd768f58b83ec9c7d3ebad5595d89b75b4e61560985c2c7898c169f079","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":334}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/a8dbd6fd768f58b83ec9c7d3ebad5595d89b75b4e61560985c2c7898c169f079.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/a8dbd6fd768f58b83ec9c7d3ebad5595d89b75b4e61560985c2c7898c169f079.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/Vos et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"61","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"not_found"},"width":669,"height":334,"image_format":"jpeg","image_sha256":"1f8d59275c51474ac645cd51031871375321fff1efc415e470ed1b0d7f1436b4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_62_fig_1.jpg","caption":"FIG. 1. (Color online) (a) Schematic representation of the Oxford Instruments FlexAL reactor for plasma-assisted atomic layer deposition (Ref. 24) on which the OES equipment is implemented. The optical emission signal can either be obtained at the top of the plasma source (as indicated in the figure) or in the downstream region. (b) Photograph of the upper part of the FlexAL reactor showing the ICP plasma source, the top of the chamber, and the gate valve in between the chamber and the plasma source. The OES spectrometer (Ocean Optics USB4000, bottom left) is connected with an optical fiber to a window installed on a vacuum port in the downstream region.","id":"test/atomic-layer-deposition/experimental-usecase/62/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/62/fig_1","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A detailed diagram of a vacuum chamber setup including components like plasma source, optical emission spectrometer, ellipsometer, precursor injection, and turbo-pump.\"},{\"panel_id\":\"b\",\"text\":\"A photograph of a vacuum chamber, with plasma source and optical emission spectrometer.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Precursor gases are injected from the top, such that by defenition they will flow over a sample.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The used plasma source is a remote source. The plasma is generated between the visible coils and is not connected to a biased table.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Between the reactor chamber and turbo-pump a butterfly valve is visible. Such a valve gives good control on the flows and pressures in the reactor chamber during processing.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, ligands can diffuse in the plasma, visible for the OES.\"}]}]","bbox":[{"panel_id":"a","x":11,"y":5,"width":454,"height":513},{"panel_id":"b","x":0,"y":516,"width":469,"height":573}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/Mackus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"62","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":475,"height":1088,"image_format":"jpeg","image_sha256":"fedbd72599a648252538d01066f7b9a275a2f4a52722607a8e6375b55bdb56ea","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG1.jpg","caption":"FIG. 1. Diagram of the remote inductively coupled plasma source in the PEALD system used in this work. The figure highlights the different locations characterized by the OES (remote plasma source) and Langmuir probe (downstream of the remote plasma near sample stage).","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG1","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG1","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":653,"height":708}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":653,"height":708,"image_format":"jpeg","image_sha256":"2d168eb5124a783913e9edeedcdeb52e8646123166a34fed50f4b36bb12ba342","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_20_fig_1.jpg","caption":"Fig. 1. (a) stack-type multi-wafer batch ALD reactor [7]; (b) in-line spatial ALD reactor [8,10]; and (c) rotary spatial ALD reactor.","id":"test/atomic-layer-deposition/simulation-usecase/20/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/20/fig_1","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"},{"panel_id":"c","label":"apparatus diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic of a stack-type batch ALD reactor where multiple wafers are arranged vertically, with gas inlet at the top and exhaust at the bottom, allowing simultaneous processing of multiple substrates.\"},{\"panel_id\":\"b\",\"text\":\"Cross-sectional diagram of an in-line spatial ALD reactor showing precursor dosing cylinders (Precursor A, Precursor B), separating gas injectors, exhaust ports, pumping manifold, and the gap between the gas delivery head and the moving wafer.\"},{\"panel_id\":\"c\",\"text\":\"Top-down view of a rotary spatial ALD reactor where the wafer rotates beneath fixed precursor injection points (A and B) separated by inert gas curtains, with multiple exhaust ports arranged radially.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the batch ALD reactor (a), precursors are separated in time through sequential dosing and purging steps, with all wafers exposed to the same gas simultaneously. In contrast, the spatial ALD reactors (b) and (c) separate precursors in space rather than time, with different precursor zones maintained by inert gas curtains and exhaust pumping. This allows continuous deposition without purging steps, dramatically increasing throughput from nm/min to nm/s.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In-line spatial ALD (b): linear wafer belt movement beneath stationary gas injectors. Rotary spatial ALD (c): wafer rotation beneath fixed precursor injection points arranged in a circular pattern.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The separating gas (typically nitrogen or argon) creates an inert gas curtain between the precursor zones to prevent intermixing of precursor A and precursor B, which would cause unwanted CVD-type reactions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The gap is the space between the bottom of the gas dosing cylinders and the top surface of the moving wafer, which allows gas flow development and wafer movement.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":3,"width":334,"height":708},{"panel_id":"b","x":351,"y":0,"width":686,"height":306},{"panel_id":"c","x":366,"y":304,"width":657,"height":409}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/Dongqing Pan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":1042,"height":714,"image_format":"jpeg","image_sha256":"240e21ff5b809ee1c40bc6d9f5f05620f864f56e68dee594317ba5966c881bd8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_20_fig_2.jpg","caption":"Fig. 2. 3D computational domain of in-line spatial ALD reactor: (a) fluid domain in the two precursor dosing cylinders, one separating gas injecting cylinder, two exhaust cylinders, and the gap spaces between each arrangement, dimension scale in meters, and (b) center slice of the 3D domain. A, B, C and D are the probing points for the flow or chemical deposition analysis.","id":"test/atomic-layer-deposition/simulation-usecase/20/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/20/fig_2","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"3D computational domain of the in-line spatial ALD reactor showing the meshed fluid volume, including water and TMA precursor dosing cylinders, nitrogen separating gas cylinder, two exhaust cylinders, and the gap region between the gas delivery head and wafer surface. Scale bar indicates dimensions in meters.\"},{\"panel_id\":\"b\",\"text\":\"Center slice (2D cross-section) of the 3D computational domain showing the wafer top surface (yellow) and four probing points (A, B, C, D) used to monitor precursor concentrations and surface deposition rates during simulations.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A non-structural tetrahedral mesh, as stated in the paper for finite volume method (FVM) calculations.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Water precursor, exhaust, nitrogen (separating gas), exhaust, TMA precursor.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Because each half-reaction occurs under a separate precursor cylinder, and a wafer position must pass through both zones (water and TMA) to complete one full ALD deposition cycle.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Points A and D are located under the water and TMA dosing cylinders respectively, and are used to probe surface deposition rates during simulations. Points B and C are positioned in the exhaust regions between precursor zones and are used to monitor precursor concentrations for studying intermixing. This arrangement allows tracking of both chemical deposition kinetics and gas transport behavior.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":3,"width":657,"height":471},{"panel_id":"b","x":9,"y":474,"width":641,"height":482}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/Dongqing Pan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":666,"height":959,"image_format":"jpeg","image_sha256":"13e7f6efe5804ba477b1302f6715135bc283aa18b6da9238ec9d0a7b11065715","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_3_fig_1.jpg","caption":"FIG. 1. (Color online) Cambridge Nanotech Savannah S100 ALD system consists of precursor cylinders, precursor manifold, carrier gas manifold, chamber, outlet manifold, and a vacuum pump (not shown in the figure).","id":"test/atomic-layer-deposition/simulation-usecase/3/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/3/fig_1","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"3D schematic of the Cambridge NanoTech Savannah S100 ALD system used for Al₂O₃ deposition with TMA and water precursors. Key components include precursor cylinders at the bottom, stop valves for millisecond pulse control, a carrier gas manifold for nitrogen flow (20 sccm), a heated circular chamber (150 mm diameter, 100–250°C range), and an outlet to a vacuum pump maintaining ~0.30 Torr background pressure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Precursors are stored in separate cylinders at room temperature and injected by their own vapor pressure (9.43 Torr for TMA, 23.68 Torr for water). Stop valves control brief 0.015 s pulses, while nitrogen carrier gas continuously flows through the system and a vacuum pump maintains low background pressure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"225°C (with setpoint 224°C visible in red).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The chamber is designed for substrates up to 100 mm diameter.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"(1) Transport precursor vapors into the chamber, (2) purge excess precursors between pulses, and (3) remove reaction byproducts (CH₄) during the purge steps.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":634,"height":632}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/Dongqing Pan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":636,"height":637,"image_format":"jpeg","image_sha256":"6f8ce369d415093f9ea1ae2f1ae0610149f423b53f6ad86ffbd14c21b1889059","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_3_fig_2.jpg","caption":"FIG. 2. (Color online) 3D computational domain in the numerical model is based on S100 ALD reactor system. There are three inlets, one outlet, and surface reactions are enabled only on the chamber bottom wall.","id":"test/atomic-layer-deposition/simulation-usecase/3/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/3/fig_2","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The diagram illustrates a chamber setup with nitrogen, water, and TMA entering the chamber, and emissions exiting\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Only on the chamber bottom wall, where the wafer substrates are placed.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The computational mesh used for finite volume method (FVM) discretization in the CFD simulation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Three inlets (nitrogen, TMA, water) and one outlet (emissions).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In actual ALD processes, materials deposit on all inner surfaces of the system. However, for computational simplicity and efficiency, the numerical model restricts deposition reactions to the chamber bottom where wafers are placed. This allows focused study of film growth on substrates without the computational cost of tracking reactions on all surfaces.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":1,"width":605,"height":306}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/Dongqing Pan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":608,"height":306,"image_format":"jpeg","image_sha256":"75b4e3d2143a1443b12f27d955e953fae0af27c6ef2210bb30faed31629fcd83","metadata_license":"MIT for repository metadata where applicable; 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Schematic showing ellipsometer beam interacting with film stack comprised of $\\mathrm{WO}_3$ , W, $\\mathrm{Al}_2\\mathrm{O}_3$ , $\\mathrm{SiO}_2$ , and underlying Si substrate.","id":"test/atomic-layer-etching/experimental-usecase/25/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_2","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":3,"width":665,"height":443}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":673,"height":453,"image_format":"jpeg","image_sha256":"45236f8af88e56444f250ec71221e8665aa12ff2363a5210764ea688a013df5c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_37_fig_1.jpg","caption":"FIG. 1. Simplified schematic representation of deposition chamber used in this work, including the gas-delivery lines setup, pumping system, and attached spectroscopic ellipsometer.","id":"test/atomic-layer-etching/experimental-usecase/37/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/37/fig_1","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":667,"height":603}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/Effect of reactant dosing on selectivity during area-selective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":667,"height":603,"image_format":"jpeg","image_sha256":"4b25b0100c4243a262bce2f0cc18ebe802a2fcb5f6c787324948e2454c50cd02","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_41_fig_1.jpg","caption":"FIG. 1. (a) Schematic diagram of a cylindrical ICP reactor with halogen lamps and (b) the description of the TiN ALE process using oxidation in $\\mathrm{O_2}$ plasma, fluorination in $\\mathrm{CF_4}$ plasma, and removal step by the heating method.","id":"test/atomic-layer-etching/experimental-usecase/41/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/41/fig_1","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"process timing diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure shows a schematic of a cylindrical inductively coupled plasma (ICP) reactor used for TiN ALE experiments. It includes the gas inlet and exhaust, wafer position, halogen lamp heating system, and thermocouple, illustrating the physical configuration of the experimental setup.\"},{\"panel_id\":\"b\",\"text\":\"The subfigure shows a process timing diagram for the TiN atomic layer etching cycle. It details the sequential oxidation (O₂ plasma), fluorination (CF₄ plasma), and removal (thermal heating) steps, along with purge periods, operating pressures, temperatures, and step durations arranged along a time axis.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The cycle begins with oxidation using an O₂ plasma to modify the TiN surface. This is followed by fluorination with a CF₄ plasma, which introduces fluorine into the modified layer. Finally, a thermal heating step removes the reaction products, completing one ALE cycle before the next repetition.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"CF₄ plasma.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thermal heating.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":62,"width":664,"height":275},{"panel_id":"b","x":39,"y":457,"width":615,"height":355}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/Plasma atomic layer etching for titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":675,"height":816,"image_format":"jpeg","image_sha256":"767ffe038f6bd8f806a595df3e3a7d5ca0b84a45d9ba76c014abaa330fe21409","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_8607573f81baedd4df529ad3c7366f2a052ccbf20c1234c4624e7d119b4cf3ce.jpg","caption":"(a)","id":"test/atomic-layer-etching/simulation-usecase/34/8607573f81baedd4df529ad3c7366f2a052ccbf20c1234c4624e7d119b4cf3ce","sample_id":"atomic-layer-etching/simulation-usecase/34/8607573f81baedd4df529ad3c7366f2a052ccbf20c1234c4624e7d119b4cf3ce","subset":"apparatus-diagram","split":"test","classification":[{"panel_id":"a","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":583,"height":161}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/8607573f81baedd4df529ad3c7366f2a052ccbf20c1234c4624e7d119b4cf3ce.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/8607573f81baedd4df529ad3c7366f2a052ccbf20c1234c4624e7d119b4cf3ce.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":583,"height":161,"image_format":"jpeg","image_sha256":"7d121e8e934fb0b7aea9b4ffefb3d43a3767f30f9c9eddbc66c75f52acb8ede2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/apparatus-diagram/train/metadata.jsonl b/subsets/apparatus-diagram/train/metadata.jsonl index c2657a63487d05efe8202de2228bcb47876df89a..d52c5e2f9bf5bf8fe3adabca7224503ed7fa53ff 100644 --- a/subsets/apparatus-diagram/train/metadata.jsonl +++ b/subsets/apparatus-diagram/train/metadata.jsonl @@ -1,31 +1,31 @@ -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_12_fig1.jpg","caption":"Fig.1. t sample holder. $\\mathrm{SiO}_2$ particles are pressed into a tungsten grid and positioned in the infrared beam.","id":"train/atomic-layer-deposition/experimental-usecase/12/fig1","sample_id":"atomic-layer-deposition/experimental-usecase/12/fig1","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/J.W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":1048,"height":845,"image_format":"jpeg","image_sha256":"d16b0dc9ad6f1a43765331ca4d638aacd55d23800f48901d284e6565e8b1f9d8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":570,"y":0,"width":472,"height":472},{"panel_id":"a","x":0,"y":0,"width":600,"height":848}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_12_fig_3.jpg","caption":"Fig. 3. (A) Experimental schematic of vacuum apparatus for in situ spectroscopic ellipsometry studies on Si(100) samples. (B) Spectroscopic ellipsometry is conducted in the central deposition chamber using a rotating analyzer detector.","id":"train/atomic-layer-deposition/experimental-usecase/12/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/12/fig_3","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/J.W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":1000,"height":1006,"image_format":"jpeg","image_sha256":"9b39037c9fff489f69ce8b948a3a24da4994a1887d5eeb6f3011dee0de534e8a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":2,"y":515,"width":993,"height":487},{"panel_id":"a","x":2,"y":2,"width":995,"height":516}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_18_fig_1.jpg","caption":"FIG. 1. (Color online) (a) ALD150LX reactor design schematic highlighting TDMAZr and forming gas delivery lines and the M2000DI spectroscopic ellipsometer for in-situ ALD growth characterization. (b) Precursor and plasma pulsing sequence for a ZrN PEALD cycle.","id":"train/atomic-layer-deposition/experimental-usecase/18/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/18/fig_1","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"process timing diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/Triratna Muneshwar et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":684,"height":877,"image_format":"jpeg","image_sha256":"ae09ad2500e9ed29218bef4bc10a86c337e28fbb6286e674a9235b8a4b3ecc0d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":13,"y":5,"width":667,"height":532},{"panel_id":"b","x":4,"y":624,"width":673,"height":254}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Plasma-enhanced ALD reactor configuration for ZrN deposition, showing TDMAZr delivery with Ar carrier gas, forming-gas plasma generation via ICP, substrate placement, pumping, and in-situ spectroscopic ellipsometry for real-time growth monitoring, enabling low-temperature, plasma-assisted, self-limiting growth.\"},{\"panel_id\":\"b\",\"text\":\"Time-resolved pulse sequence for a single ZrN PEALD cycle, detailing TDMAZr precursor pulse, Ar purge, forming-gas plasma exposure, and final purge. Temporal separation of half-reactions establishes the self-limiting ALD mechanism and underpins saturation behavior observed in subsequent figures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Time step | TDMAZr pulse | Forming gas | Plasma power | Ar gas flow |\\n|---|---|---|---|---|\\n| t1 | ON | OFF | OFF | ON |\\n| t2 | OFF | OFF | OFF | ON |\\n| t3 | OFF | ON | ON | ON |\\n| t4 | OFF | OFF | OFF | ON |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reactor design and pulse-sequence configuration ensure precise temporal separation of precursor adsorption and plasma-assisted ligand removal, which is essential for self-limiting PEALD. The inclusion of forming-gas plasma enables low-temperature nitridation, while in-situ ellipsometry provides real-time control over film growth, collectively enabling uniform, conductive ZrN films suitable for advanced electronic applications.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TDMAZr precursor pulse and forming-gas plasma exposure occur sequentially with Ar purge steps separating them in time.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"ICP plasma source for reactive species generation, Quartz tube for plasma confinement, TDMAZr delivery with Ar carrier gas, Ar purge lines for gas-phase isolation, In-situ spectroscopic ellipsometry for real-time thickness monitoring\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_10.jpg","caption":"Figure 10. (a) Schematic of the set-up for TS measurement. (b) Structure of the GeSe selector device.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_10","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_10","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":672,"height":281,"image_format":"jpeg","image_sha256":"13774ee305924896a9916c79821efb2cefa18fbc9a30a764e8f9445e288f0a43","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":28,"y":10,"width":267,"height":260},{"panel_id":"b","x":394,"y":38,"width":278,"height":243}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_29_figure_1.jpg","caption":"Figure 1. Experimental schematic of vacuum chamber for transmission FTIR studies on high surface area samples. $\\mathrm{SiO}_2$ particles with a surface area of $380\\mathrm{m}^2 /\\mathrm{g}$ are pressed into a tungsten grid and positioned in the infrared beam.","id":"train/atomic-layer-deposition/experimental-usecase/29/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/29/figure_1","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/J. W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":677,"height":664,"image_format":"jpeg","image_sha256":"e0333de49791230214c32e77ecbfb42fe86e2d5963b11a28fe05883353e62240","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":2,"width":669,"height":659}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_29_figure_2.jpg","caption":"Figure 2. Experimental schematic of vacuum apparatus for in situ spectroscopic ellipsometry studies on Si(100) samples. This apparatus contains a sample load lock, a central deposition chamber equipped with the spectroscopic ellipsometer, and a surface analysis chamber.","id":"train/atomic-layer-deposition/experimental-usecase/29/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/29/figure_2","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/J. W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":667,"height":647,"image_format":"jpeg","image_sha256":"eb0f258e275b52136cdeb78374d72122dc20a93ec38db50731be3e9a6cc3bf18","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":664,"height":641}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_40_fig_1.jpg","caption":"FiG. 1. Schematic diagram of plasma-enhanced atomic layer deposition apparatus.","id":"train/atomic-layer-deposition/experimental-usecase/40/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/40/fig_1","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":686,"height":627,"image_format":"jpeg","image_sha256":"8c7f660c0c644cc5e2b315e3590e5e8aa5bc6312605f1c17af7961c3180ccd11","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":1,"width":680,"height":619}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic diagram of a plasma-enhanced atomic layer deposition (PEALD) system, showing mass flow controllers for N₂/H₂/Ar and SiH₄ gas lines, a TiCl₄ precursor source, a vacuum pump, and a reactor chamber equipped with a showerhead, RF plasma region, and heated substrate stage, controlled by an RF generator and computer interface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Plasma-enhanced atomic layer deposition (PEALD).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The heated substrate stage indicates that temperature control is an important parameter for surface reactions during PEALD. Maintaining a controlled substrate temperature helps ensure consistent adsorption, reaction kinetics, and film uniformity across ALD cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Plasma generation above the substrate enables direct interaction between activated species and the surface, enhancing reaction efficiency. This can improve film quality, reduce required temperatures, and allow deposition on temperature-sensitive substrates while maintaining atomic-scale thickness control.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_52_figure_1.jpg","caption":"Figure 1. Schematic representation of the Teflon three-electrode measurement setup. The $\\mathrm{LiCoO}_2$ films under investigation deposited on $\\mathrm{Si / TiO_2 / Pt}$ substrates are used as working electrode during the electrochemical measurements. Layer thicknesses are 5 and $20 \\mathrm{nm}$ for $\\mathrm{TiO_2}$ and $\\mathrm{Pt}$ respectively.","id":"train/atomic-layer-deposition/experimental-usecase/52/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/52/figure_1","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/Donders et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":678,"height":608,"image_format":"jpeg","image_sha256":"72548c6d03a9a23c75661e5bced1347e2e7f495d82fe74db95a1d2d60a179eae","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":405,"height":355},{"panel_id":"b","x":8,"y":308,"width":666,"height":295}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A detailed diagram of an electrochemical cell setup.\"},{\"panel_id\":\"b\",\"text\":\"A cross-sectional view of a working electrode showing its layers and materials.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Layer | Material |\\n| --- | --- |\\n| Top | LiCoO₂ |\\n| Middle | Pt / TiO₂ |\\n| Bottom | Si substrate |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In a three electrode configuration, the reference electrode provides a stable potential to measure the working electrode voltage accurately. The counter electrode carries the current needed to drive the reaction without fixing the measured potential. This separation helps reduce errors from polarization at the counter electrode, so the working electrode behavior can be evaluated more reliably.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The counter electrode is the electrode that balances the current during electrochemical testing, so it participates in the overall current flow. The reference electrode is intended to provide a stable potential and ideally carries negligible current. Even if both are Li metal foils, their roles differ because of how they are connected in the measurement and how much current they are allowed to pass.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Cu plate is shown as the electrical conductor that contacts the working electrode.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"LiCoO2\\n\\nPt (20 nm)\\n\\nTiO2 (5 nm)\\n\\nSi substrate\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_54_figure_1.jpg","caption":"Figure 1. (Color online) (a) A schematic overview of the basic configuration of the remote plasma ALD reactors. In addition to the different reactor components, the in situ spectroscopic ellipsometer is also shown. (b) A schematic of a typical remote plasma ALD cycle for the deposition of conductive thin films.","id":"train/atomic-layer-deposition/experimental-usecase/54/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/54/figure_1","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"unknown"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":678,"height":919,"image_format":"jpeg","image_sha256":"6f285e7647cdcd39f5ef1ed9638eae6cfa0c982e001aa6166527a8729f34d3aa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":1,"width":667,"height":462},{"panel_id":"b","x":3,"y":466,"width":668,"height":450}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_59_fig_1.jpg","caption":"FIG. 1. (Color online) (a) Schematic representation of the remote plasma atomic layer deposition (ALD) setup for $\\mathrm{TaN}_x$ deposition. The optical access on the reactor chamber for in situ spectroscopic ellipsometry and optical emission spectroscopy is indicated. (b) Typical timing scheme for remote plasma ALD of $\\mathrm{TaN}_x$ showing the PDMAT dosing, the Ar carrier and purge gas, the plasma gas $(\\mathrm{H}_2,\\mathrm{H}_2 - \\mathrm{N}_2$ or $\\mathrm{NH}_3$ ), and the switching of the plasma power and the top valve between plasma source and reactor chamber.","id":"train/atomic-layer-deposition/experimental-usecase/59/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/59/fig_1","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"timeline chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/Langereis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"59","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":1300,"height":477,"image_format":"jpeg","image_sha256":"bdb3e901f7e94e96e6cdc912383bfca37d3ec9095812f29842b69ff0dd38a912","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":669,"height":463},{"panel_id":"b","x":745,"y":26,"width":550,"height":449}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig4.jpg","caption":"FIG.4. Sections of the 6M cell mesh.","id":"train/atomic-layer-deposition/simulation-usecase/31/fig4","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig4","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":642,"height":708,"image_format":"jpeg","image_sha256":"9c7159ddc3b22cba8b1e61232d9dfd68d1ad4df6a011fe20a66884736f7853ad","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":635,"height":313},{"panel_id":"b","x":1,"y":311,"width":635,"height":392}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig_2.jpg","caption":"FIG. 2. (Color online) Reaction chamber geometry and the naming used throughout the work. The gray area indicates the modeled region and the sketches representing the precursor line and outlet extension are only for illustration and not modeled.","id":"train/atomic-layer-deposition/simulation-usecase/31/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig_2","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":672,"height":397,"image_format":"jpeg","image_sha256":"118599acf927fed87f1f5aafebbe0ae396ff4cd34cabe858a1be4a4f22cce56f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":668,"height":393}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig_3.jpg","caption":"FIG. 3. (Color online) Precursor behavior during a single cycle at $\\mathrm{Re} = 80$ The region where the sample lies is highlighted in the figure.","id":"train/atomic-layer-deposition/simulation-usecase/31/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig_3","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":680,"height":553,"image_format":"jpeg","image_sha256":"a7093b01c6a70e70b04b86689bdf72404b1d23c75897df0e95c1c72160251ad2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":672,"height":547}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image depicts a series of apparatus diagrams showing a flow of reactants at different time points (t1 to t12). Each frame illustrates the progression of the flow of two reactants depicted in two different colors.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| t1 | t2 | t3 |\\n| --- | --- | --- |\\n| ![](t1.png) | ![](t2.png) | ![](t3.png) |\\n\\n| t4 | t5 | t6 |\\n| --- | --- | --- |\\n| ![](t4.png) | ![](t5.png) | ![](t6.png) |\\n\\n| t7 | t8 | t9 |\\n| --- | --- | --- |\\n| ![](t7.png) | ![](t8.png) | ![](t9.png) |\\n\\n| t10 | t11 | t12 |\\n| --- | --- | --- |\\n| ![](t10.png) | ![](t11.png) | ![](t12.png) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No the reactant inlets are different and placed perpendicular to eachother.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes they do. Both are distributed fully over the reactor and pumped down from the underside of the reactor.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In the middle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"On the top side of the reactor, such that the flows starts already above the sample.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig_6.jpg","caption":"FIG. 6. (Color online) Section of the instantaneous precursor fields at approximately midway through the injection for $\\mathrm{Re} = 40$ (top) and $\\mathrm{Re} = 2400$ (bottom). Only the precursor field is colored in the figures.","id":"train/atomic-layer-deposition/simulation-usecase/31/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig_6","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":678,"height":628,"image_format":"jpeg","image_sha256":"0716854d48e9f4ad4370425cf907b41e248f8146701bc26353144411fb6d7a87","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":678,"height":285},{"panel_id":"b","x":0,"y":301,"width":678,"height":327}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_1.jpg","caption":"Fig. 1 - Schematics of the ALD system (Ultratech® Fiji F200): a) the ALD reactor chamber, b) the reactant feeding system.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_1","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":1013,"height":761,"image_format":"jpeg","image_sha256":"2af4b287729ea47d6a2228538833d22a89e6b9f6eaade4c53410003e42340015","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":10,"width":627,"height":751},{"panel_id":"b","x":604,"y":76,"width":409,"height":629}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_2.jpg","caption":"Fig. 2 - Computational mesh generated for: a) the ALD reactor model, b) the reactant feeding system.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_2","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":1012,"height":772,"image_format":"jpeg","image_sha256":"800103fda990c239864d14fc77ffef8f5902a5e980da8a9daa7e3cab163d2bc3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":0,"width":358,"height":685},{"panel_id":"b","x":603,"y":49,"width":409,"height":635}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_7.jpg","caption":"Fig. 7 - Feeding system simulation results for the pure Ar flow, with the ALD valves closed: a) pressure distribution, b) TMA mole fraction distribution.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_7","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":1016,"height":636,"image_format":"jpeg","image_sha256":"98c91ee1ec0c92d1ca6ec4cc7f6bf4ed9feb35806d14132a82d097bf8681e5ca","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":0,"width":409,"height":594},{"panel_id":"b","x":553,"y":2,"width":455,"height":584}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_5.jpg","caption":"Figure 5. Four types of spatial, rotary ASALD reactor models with various inlet and outlet geometries (ring or annular sector) and positioning (symmetric or asymmetric) of reagent inlets. Red and blue areas indicate the outlets and inlets, respectively. 3 wafers are placed at the bottom inside the reactors.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_5","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"},{"panel_id":"c","label":"apparatus diagram"},{"panel_id":"d","label":"apparatus diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":1094,"height":842,"image_format":"jpeg","image_sha256":"0c97c23c1fe59e2e8ca513f12fa06f3c12c643a091abf753c7d809e72b777d2b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":488,"height":359},{"panel_id":"b","x":605,"y":0,"width":489,"height":358},{"panel_id":"c","x":0,"y":436,"width":490,"height":355},{"panel_id":"d","x":603,"y":438,"width":491,"height":356}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Conceptual model of a spatial, rotary ASALD reactor showing one inlet/outlet configuration and reagent positioning, illustrating gas distribution over three wafers on a rotating plate.\"},{\"panel_id\":\"b\",\"text\":\"Conceptual model of a spatial, rotary ASALD reactor showing a second inlet/outlet configuration and reagent positioning, illustrating gas distribution over three wafers on a rotating plate.\"},{\"panel_id\":\"c\",\"text\":\"Conceptual model of a spatial, rotary ASALD reactor showing a third inlet/outlet configuration and reagent positioning, illustrating gas distribution over three wafers on a rotating plate.\"},{\"panel_id\":\"d\",\"text\":\"Conceptual model of a spatial, rotary ASALD reactor showing a fourth inlet/outlet configuration and reagent positioning, illustrating gas distribution over three wafers on a rotating plate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Gas flow distribution, Reactant exposure uniformity, Effect of inlet and outlet geometry, Suitability for multiscale and CFD simulations\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Asymmetric inlet geometries alter the flow distribution and interaction of reactant gases compared to symmetric designs, which can significantly affect uniformity and reactor performance.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In all four reactor configurations, three wafers are mounted on a rotating plate at the bottom of the reactor. As the plate rotates, the wafers sequentially pass through spatially separated reaction zones defined by different inlet and outlet geometries. Reagents and inert gases are introduced through specifically shaped inlets, while outlets remove gases, allowing controlled exposure of the wafer surfaces without temporal pulsing.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The inlet and outlet geometries vary in shape (ring or annular sector) and positioning (symmetric or asymmetric) across the four reactor models.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_6.jpg","caption":"Figure 6. Three wafers on the rotating plate. Each wafer has 10 equiangular sections to evaluate 10 surface area-averaged pressures to evaluate an averaged surface coverage, and source generation and consumption rates.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_6","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":436,"height":431,"image_format":"jpeg","image_sha256":"943dabdac32a623c40a83f5913e2742fa5e5db3e53f0d955781e891ad5a993e2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":436,"height":431}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 6 shows an image panel of three wafers mounted on a rotating plate, with each wafer divided into 10 equiangular sections. This segmentation is used to compute surface area–averaged pressures, surface coverage, and source generation and consumption rates, enabling parallel mesoscopic simulations within the multiscale modeling framework.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Description|\\n|-----------|\\n|Image panel showing three wafers mounted on a rotating plate. Each wafer is divided into 10 equiangular sections to evaluate surface area–averaged pressures, surface coverage, and source generation and consumption rates. The segmentation enables parallel mesoscopic simulations and area-weighted averaging for multiscale modeling.|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Surface area–averaged pressure, Surface coverage, Source generation rates, Source consumption rates\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Segmenting the wafer enables localized evaluation of pressures and reaction rates, leading to a more accurate area-weighted estimation of surface coverage than considering the wafer as a single homogeneous unit.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Each of the three wafers is divided into 10 equiangular sections. This segmentation allows mesoscopic simulations to be executed in parallel for each section, and the results from all sections are combined to compute area-weighted averages of surface pressures, coverage, and source generation or consumption rates. This approach efficiently integrates the wafer-scale spatial information into the multiscale modeling framework.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Each wafer is divided into 10 equiangular sections, and there are 3 wafers mounted on the rotating plate.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_43_figure_8.jpg","caption":"Figure 8. Electrical characterization of $\\mathbb{P}$ Ge(100) MOSCap devices. (a) Schematic of the MOSCap structure using $\\mathrm{Ni / HfO_2(24\\AA) / [Al_2O_3(n\\Delta A) / [Al_2O_3(n\\Delta A) / [Al_2O_3(n\\Delta A) / [Al_2O_3(n\\Delta A) / [Al_2O_3(n\\Delta A) / [Al_2O_3(n\\Delta A) / [Al_2O_3(n\\Delta A) / [Al_2O_3(n\\Delta A) / [Al_2O_2(n\\Delta A) / [Al_2O_2(n\\Delta A) / [Al_2O_2(n\\Delta A) / [Al_2O_2(n\\Delta A) / [Al_2O_2(n\\Delta A) / [Al_2O_2(n\\Delta A) / [Al_2O_2(n\\Delta A) / [Al_2O_2(n\\Delta A) / [Al_{2}O_{2}]$ cycles)/GeOx(5 A)]/p-Ge(100). (b) $C - V$ and (c) $J_{\\mathrm{G}} - V$ for MOSCaps with $n = 9$ cycles of $\\mathrm{Al}_2\\mathrm{O}_3$ ALD. Trends of (d) $C_{\\mathrm{max}}$ for $C - V$ at $f = 1.5\\mathrm{MHz}$ (e) $J_{\\mathrm{G}}$ at $1\\mathrm{V}$ overdrive with respect to flatband voltage $(V_{\\mathrm{FB}})$ $V = V_{\\mathrm{FB}} - 1\\mathrm{V}$ (f) $C - V$ hysteresis $(\\Delta V_{\\mathrm{FB}})$ at flatband voltage, and (g) $D_{\\mathrm{it}}$ at valence band top $(E = E_{\\mathrm{V}})$ $D_{\\mathrm{it}}$ was obtained by analyzing frequency-dependent $C - V$ characteristics based on the Castagne-Vapaille method.53","id":"train/atomic-layer-deposition/simulation-usecase/43/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/43/figure_8","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"line chart"},{"panel_id":"d","label":"line chart"},{"panel_id":"e","label":"line chart"},{"panel_id":"f","label":"line chart"},{"panel_id":"g","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/Yuanxia Zheng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":844,"height":541,"image_format":"jpeg","image_sha256":"a4dafa71984b1731451b9654743c2ff8510f0dc53ad33bf2329aaad534791b8a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":47,"y":51,"width":208,"height":200},{"panel_id":"b","x":287,"y":30,"width":261,"height":243},{"panel_id":"c","x":577,"y":28,"width":267,"height":245},{"panel_id":"d","x":0,"y":313,"width":201,"height":228},{"panel_id":"e","x":432,"y":310,"width":197,"height":231},{"panel_id":"f","x":217,"y":317,"width":198,"height":224},{"panel_id":"g","x":652,"y":316,"width":192,"height":225}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic illustration of the MOS capacitor structure consisting of Ni / HfO₂ (24 Å) / [Al₂O₃ (nΔÅ) cycles] / GeOₓ (5 Å) / p-Ge(100).\"},{\"panel_id\":\"b\",\"text\":\"It is a line chart representing the Capacitance–voltage (C–V) measured at a frequency of 1.5MHz for ALD of 9 cycles\"},{\"panel_id\":\"c\",\"text\":\"It is a line chart representing the Gate current density–voltage (JG – V) characteristics for MOS capacitors with n = 9 cycles of Al₂O₃ ALD with a flat band voltage of 1 V.\"},{\"panel_id\":\"d\",\"text\":\"It is a line chart representing the Maximum capacitance (C_max) extracted from C–V measurements which was recorded at f = 1.5 MHz.\"},{\"panel_id\":\"e\",\"text\":\"It is a line chart representing the Gate leakage current density (J_G) measured at 1 V overdrive with respect to the flatband voltage (V = V_FB − 1 V).\"},{\"panel_id\":\"f\",\"text\":\"It is a line chart representing the C–V hysteresis (ΔV_FB) evaluated at the flatband voltage.\"},{\"panel_id\":\"g\",\"text\":\"It is a line chart representing the Interface trap density (D_it) at the valence band edge (E = E_V), extracted from frequency-dependent C–V measurements using the Castagne–Vapaille method.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| V_G (V) | C (µF/cm²) |\\n|---|---|\\n|-1.6 | 0.0 |\\n|-0.8 | 0.5 |\\n|0.0 | 2.5 |\\n|0.8 | 0.0 |\\n|1.6 | 0.0 |\"},{\"panel_id\":\"c\",\"text\":\"| V_G (V) | J_G (mA/cm²) |\\n|---|---|\\n|-1.6 | 10^-7 |\\n|-0.8 | 10^-5 |\\n|0.0 | 10^-4 |\\n|0.8 | 10^-2 |\\n|1.6 | 10^-7 |\"},{\"panel_id\":\"d\",\"text\":\"| ALD cycles | C_max (µF/cm²) |\\n|---|---|\\n|0 | 2.6 |\\n|4 | 2.8 |\\n|9 | 2.9 |\\n|15 | 2.1 |\"},{\"panel_id\":\"e\",\"text\":\"| ALD cycles | J_G (mA/cm²) |\\n|---|---|\\n|0 | 10^2 |\\n|4 | 10^3 |\\n|9 | 10^4 |\\n|15 | 10^5 |\"},{\"panel_id\":\"f\",\"text\":\"| ALD cycles | ∑ΔV_FB |\\n|---|---|\\n|0 | 0.33 |\\n|4 | 0.28 |\\n|9 | 0.18 |\\n|15 | 0.18 |\"},{\"panel_id\":\"g\",\"text\":\"| ALD cycles | D_it (10^12 cm^-2 eV^-1) |\\n|---|---|\\n|0 | 35 |\\n|4 | 6.47 |\\n|9 | 4.85 |\\n|15 | 4.85 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing *n* decreases Cₘₐₓ and significantly reduces J_G. This is caused by the increased total physical thickness and improved dielectric quality of the bilayer, which increases the effective oxide thickness (EOT) and creates a better barrier against electron tunneling.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. Non-volatile memory requires significant, stable hysteresis for charge storage. The low ΔV_FB shown here indicates minimal charge trapping, which is excellent for logic transistors but undesirable for memory function.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For high-speed logic, 9 cycles is the optimal choice. Transistor switching speed and drive current depend directly on Gate Capacitance (C_{ox}). The 9-cycle sample maximizes this speed metric (C_{max}) while providing sufficient passivation (D_{it} saturation, graph g), whereas the 15-cycle sample sacrifices too much performance (speed) for a marginal gain in leakage reduction.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It serves as a benchmark process condition to evaluate the electrical properties (C-V and J-V) of a specific, intermediate gate stack thickness. This establishes a baseline for comparing the trends shown in the subsequent labels (d-g).\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_13_figure_1.jpg","caption":"Figure 1. Schematic diagram of BMR HiEtch inductively coupled plasma (ICP) etcher.","id":"train/atomic-layer-etching/experimental-usecase/13/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/13/figure_1","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/Low-Damage and Self-Limiting (Al)GaN Etching Process.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":950,"height":792,"image_format":"jpeg","image_sha256":"5988cbf915cef787ab75860a8381a7d1df6aa5b86b510490a1878407bbe0198c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":948,"height":790}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_13_figure_7.jpg","caption":"Figure 7. Cross-section of the Schottky diodes fabricated on n-GaN.","id":"train/atomic-layer-etching/experimental-usecase/13/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/13/figure_7","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/Low-Damage and Self-Limiting (Al)GaN Etching Process.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":392,"height":700,"image_format":"jpeg","image_sha256":"be385d6411585bae5ec46bb308b61eacb846989a3638c3b231c9f1316330933b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":1,"width":384,"height":689}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_28_fig1.jpg","caption":"FIG.1. (a) Schematic of ICP-type PECVD reactor and (b) sequence of the isotropic plasma ALE process for $\\mathrm{Al}_2\\mathrm{O}_3$ etching.","id":"train/atomic-layer-etching/experimental-usecase/28/fig1","sample_id":"atomic-layer-etching/experimental-usecase/28/fig1","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"process timing diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/Atomic layer etching of Al2O3 with NF3 plasma fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":673,"height":695,"image_format":"jpeg","image_sha256":"98ea15b0b7cad0a6b8b5a34f0688784b6f1975fea9532e141789ec1e696fc32f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":36,"y":49,"width":635,"height":269},{"panel_id":"b","x":36,"y":49,"width":635,"height":269}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_33_fig_2.jpg","caption":"FIG. 2. Schematic of ALE chamber for $300 - \\text{mm}$ wafer processing. Process gases are injected into the ICP source, and reactive radicals are transported to the processing chamber through down-flow. The carrier wafer is annealed using an IR lamp during the desorption step.","id":"train/atomic-layer-etching/experimental-usecase/33/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/33/fig_2","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/Atomic layer etching of titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":672,"height":636,"image_format":"jpeg","image_sha256":"dadb8fe51ce3ef892cdd457bbb57d478a4d4edb46c176621dce43a723f94fd85","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":5,"width":663,"height":627}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The diagram illustrates a processing chamber, highlighting components like the ICP source, IR lamp, plasma, radicals, He gas, wafer stage, and wafer.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is unlikely that this reactor is used for this as the plasma tube is significantly smaller than the wafer size.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The He is likely used for temperature control of the wafer stage and with that the wafer.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The processing gases should also be pumped away so a vacuum pump is required.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The wafers are 300 mm size wafers\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_45_figure_8.jpg","caption":"Figure 8. Film thickness for (a) initial TiN film and (b) after 200 TiN ALE cycles at $250^{\\circ}\\mathrm{C}$ for different locations in the reactor.","id":"train/atomic-layer-etching/experimental-usecase/45/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/45/figure_8","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/Thermal Atomic Layer Etching of Titanium Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":672,"height":559,"image_format":"jpeg","image_sha256":"1256d4875ba9841f98f294252e391dad46ef3e9b91aa65bcde9d8dd736dcc2b5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":1,"width":663,"height":175},{"panel_id":"b","x":1,"y":173,"width":576,"height":384}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic of the hot-wall reactor showing five TiN sample positions distributed over 12.7 cm, with reactant flow from left to right toward the pump.\"},{\"panel_id\":\"b\",\"text\":\"Film thickness versus sample location before and after 200 TiN ALE cycles using O₃ and HF at 250°C. The initial TiN thickness is uniform at approximately 75 Å across all positions. After ALE, positions 2 through 5 show consistent etching with an etch rate of 0.19 Å/cycle, while position 1 (nearest to reactant entry) shows slightly higher etching at 0.27 Å/cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample Location | Initial TiN Thickness (Å) | After 200 Cycles ALE at 250°C (Å) |\\n|-----------------|--------------------------|----------------------------------|\\n| 1 | 75 | 20 |\\n| 2 | 75 | 35 |\\n| 3 | 75 | 30 |\\n| 4 | 75 | 35 |\\n| 5 | 75 | 40 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 250°C, the TiN ALE process shows good uniformity across most of the reactor. Positions 2 through 5 all exhibit a consistent etch rate of approximately 0.19 Å/cycle. However, position 1, closest to the reactant entry, shows a slightly higher etch rate of 0.27 Å/cycle. This enhanced etching near the inlet likely results from higher local reactant concentrations before any depletion occurs along the flow path.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"To assess the spatial uniformity of the TiN ALE process and detect any effects from reactant depletion or decomposition along the reactor.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The results suggest reasonably good uniformity at 250°C. Four out of five positions show identical etch rates, with only the position nearest the reactant inlet displaying elevated etching. For semiconductor manufacturing applications where precise thickness control is critical, this level of uniformity would be acceptable for most of the reactor volume, though the inlet region may require optimization or sample positioning adjustments.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 75 Å, uniform across all five sample positions.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_45_figure_9.jpg","caption":"Figure 9. Film thickness for (a) initial TiN film and (b) after 200 TiN ALE cycles at $350^{\\circ}\\mathrm{C}$ for different locations in the reactor.","id":"train/atomic-layer-etching/experimental-usecase/45/figure_9","sample_id":"atomic-layer-etching/experimental-usecase/45/figure_9","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/Thermal Atomic Layer Etching of Titanium Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":670,"height":558,"image_format":"jpeg","image_sha256":"9cb0a53542b7f9d6401dd3cb6ffb872b2cfd1e1662e682131a3a9ef5e68736d0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":669,"height":162},{"panel_id":"b","x":2,"y":165,"width":582,"height":387}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic of the hot-wall reactor showing five TiN sample positions over 12.7 cm, with reactant flow from left toward the pump.\"},{\"panel_id\":\"b\",\"text\":\"Film thickness versus sample location before and after 200 TiN ALE cycles using O₃ and HF at 350°C. Initial thickness is uniform at approximately 72 Å. After ALE, significant non-uniformity appears: upstream positions (1 through 3) show substantial etching to approximately 20 to 25 Å, while downstream positions (4 and 5) retain more material at 35 to 47 Å due to reduced O₃ concentration from thermal decomposition.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample Location | Initial TiN Thickness (Å) | After 200 Cycles ALE at 250°C (Å) |\\n|-----------------|--------------------------|----------------------------------|\\n| 1 | 75 | 20 |\\n| 2 | 75 | 20 |\\n| 3 | 75 | 22 |\\n| 4 | 75 | 30 |\\n| 5 | 75 | 45 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The uniformity is significantly worse at 350°C compared to 250°C. At 250°C, positions 2 through 5 showed consistent etch rates of 0.19 Å/cycle. At 350°C, there is a clear gradient with downstream positions showing progressively less etching. Position 5 retains approximately 47 Å while positions 1 through 3 are etched to around 20 to 25 Å. This gradient results from O₃ decomposition on reactor surfaces at higher temperature, depleting the oxidant before it reaches downstream samples.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thermal decomposition of O₃ on the hot-wall reactor surfaces, which reduces O₃ concentration at downstream positions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This result indicates that operating temperature must be carefully selected to balance etch rate and uniformity. While higher temperatures may offer faster kinetics, O₃ decomposition limits the useful reactor volume and creates thickness gradients across the substrate. For applications requiring uniform etching over large areas, 250°C appears preferable. Alternatively, reactor designs that minimize O₃ surface decomposition or provide distributed oxidant injection could extend the uniform etching region at higher temperatures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Positions 1, 2, and 3 (upstream, nearest to reactant entry), with final thicknesses of approximately 22, 22, and 24 Å respectively.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_7_62d1dd2fa406668b8eddd3c6316f3a8af1a41885fe6affb8d6b685b0bcdeb813.jpg","caption":"","id":"train/atomic-layer-etching/experimental-usecase/7/62d1dd2fa406668b8eddd3c6316f3a8af1a41885fe6affb8d6b685b0bcdeb813","sample_id":"atomic-layer-etching/experimental-usecase/7/62d1dd2fa406668b8eddd3c6316f3a8af1a41885fe6affb8d6b685b0bcdeb813","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/62d1dd2fa406668b8eddd3c6316f3a8af1a41885fe6affb8d6b685b0bcdeb813.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/62d1dd2fa406668b8eddd3c6316f3a8af1a41885fe6affb8d6b685b0bcdeb813.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/Atomic Layer Etching What CanWe Learn from Atomic Layer Deposition.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"not_found"},"width":667,"height":408,"image_format":"jpeg","image_sha256":"674ea17a854fe0bafb85e7001a2eec7727186092dd16a60ad99b5eeedbed5f66","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":667,"height":408}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_1.jpg","caption":"Fig 1. t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t","id":"train/atomic-layer-etching/simulation-usecase/16/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_1","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":1183,"height":297,"image_format":"jpeg","image_sha256":"95aaefb970f509f72695207b959c0361e67c67d93fbb68ecb559e5dd7a2beb70","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":12,"width":556,"height":236},{"panel_id":"b","x":634,"y":0,"width":541,"height":255}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a cross-sectional view of a fin-based transistor.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates a cross-sectional view of a nanowire-based transistor.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"One of the benefits is the additional control over the current by the gate as it is fully wrapped around it.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An important consideration is that due to the 3D nature of the device, a lot of processes need to be conformal.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A transistor also needs source and drain contacts, such that a current can flow through the device.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Silicon\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_2.jpg","caption":"Fig 2. t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t h t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t h","id":"train/atomic-layer-etching/simulation-usecase/16/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_2","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":1180,"height":353,"image_format":"jpeg","image_sha256":"30a1d38a1c00edc5ca74dd2789e0aeee64b42db30c40339827ae095ef46e45d6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":636,"y":8,"width":544,"height":282},{"panel_id":"b","x":9,"y":161,"width":558,"height":142}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A schematic diagram illustrating the setup of an ALD system involving precursor and carrier gas inlets.\"},{\"panel_id\":\"b\",\"text\":\"A diagram depicting the flow of precursor gases through reaction zones and effluent collection in an ALD tool.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the effluent zones the pure used gases can be found (carrier gas and precursor gas), but also volatile reaction products.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With a gas shield the different precursor gases are shielded from eachother.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For supercycle processes usually more than two reactants are required. This is not possible with this setup. The figure shows the inlet of just two precursor gases.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The pump is used to make sure that the sample is unable to move with respect to the sample table.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_17_fig4.jpg","caption":"Fig.4. reactor, and (d) the inclined plate reactor.","id":"train/atomic-layer-etching/simulation-usecase/17/fig4","sample_id":"atomic-layer-etching/simulation-usecase/17/fig4","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"},{"panel_id":"c","label":"apparatus diagram"},{"panel_id":"d","label":"apparatus diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/Multiscale computational fluid dynamics modeling of thermal atomic layer etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":994,"height":1145,"image_format":"jpeg","image_sha256":"889a003da50c4b3994473e0899709bbc235b16f9657d1604ab21f80f7864cc39","metadata_license":"MIT for repository metadata where applicable; 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Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":1048,"height":845,"image_format":"jpeg","image_sha256":"d16b0dc9ad6f1a43765331ca4d638aacd55d23800f48901d284e6565e8b1f9d8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_12_fig_3.jpg","caption":"Fig. 3. (A) Experimental schematic of vacuum apparatus for in situ spectroscopic ellipsometry studies on Si(100) samples. (B) Spectroscopic ellipsometry is conducted in the central deposition chamber using a rotating analyzer detector.","id":"train/atomic-layer-deposition/experimental-usecase/12/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/12/fig_3","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":2,"y":515,"width":993,"height":487},{"panel_id":"a","x":2,"y":2,"width":995,"height":516}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/J.W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":1000,"height":1006,"image_format":"jpeg","image_sha256":"9b39037c9fff489f69ce8b948a3a24da4994a1887d5eeb6f3011dee0de534e8a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_18_fig_1.jpg","caption":"FIG. 1. (Color online) (a) ALD150LX reactor design schematic highlighting TDMAZr and forming gas delivery lines and the M2000DI spectroscopic ellipsometer for in-situ ALD growth characterization. (b) Precursor and plasma pulsing sequence for a ZrN PEALD cycle.","id":"train/atomic-layer-deposition/experimental-usecase/18/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/18/fig_1","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"process timing diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Plasma-enhanced ALD reactor configuration for ZrN deposition, showing TDMAZr delivery with Ar carrier gas, forming-gas plasma generation via ICP, substrate placement, pumping, and in-situ spectroscopic ellipsometry for real-time growth monitoring, enabling low-temperature, plasma-assisted, self-limiting growth.\"},{\"panel_id\":\"b\",\"text\":\"Time-resolved pulse sequence for a single ZrN PEALD cycle, detailing TDMAZr precursor pulse, Ar purge, forming-gas plasma exposure, and final purge. Temporal separation of half-reactions establishes the self-limiting ALD mechanism and underpins saturation behavior observed in subsequent figures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Time step | TDMAZr pulse | Forming gas | Plasma power | Ar gas flow |\\n|---|---|---|---|---|\\n| t1 | ON | OFF | OFF | ON |\\n| t2 | OFF | OFF | OFF | ON |\\n| t3 | OFF | ON | ON | ON |\\n| t4 | OFF | OFF | OFF | ON |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reactor design and pulse-sequence configuration ensure precise temporal separation of precursor adsorption and plasma-assisted ligand removal, which is essential for self-limiting PEALD. The inclusion of forming-gas plasma enables low-temperature nitridation, while in-situ ellipsometry provides real-time control over film growth, collectively enabling uniform, conductive ZrN films suitable for advanced electronic applications.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TDMAZr precursor pulse and forming-gas plasma exposure occur sequentially with Ar purge steps separating them in time.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"ICP plasma source for reactive species generation, Quartz tube for plasma confinement, TDMAZr delivery with Ar carrier gas, Ar purge lines for gas-phase isolation, In-situ spectroscopic ellipsometry for real-time thickness monitoring\"}]}]","bbox":[{"panel_id":"a","x":13,"y":5,"width":667,"height":532},{"panel_id":"b","x":4,"y":624,"width":673,"height":254}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/Triratna Muneshwar et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":684,"height":877,"image_format":"jpeg","image_sha256":"ae09ad2500e9ed29218bef4bc10a86c337e28fbb6286e674a9235b8a4b3ecc0d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_10.jpg","caption":"Figure 10. (a) Schematic of the set-up for TS measurement. (b) Structure of the GeSe selector device.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_10","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_10","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":28,"y":10,"width":267,"height":260},{"panel_id":"b","x":394,"y":38,"width":278,"height":243}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":672,"height":281,"image_format":"jpeg","image_sha256":"13774ee305924896a9916c79821efb2cefa18fbc9a30a764e8f9445e288f0a43","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_29_figure_1.jpg","caption":"Figure 1. Experimental schematic of vacuum chamber for transmission FTIR studies on high surface area samples. $\\mathrm{SiO}_2$ particles with a surface area of $380\\mathrm{m}^2 /\\mathrm{g}$ are pressed into a tungsten grid and positioned in the infrared beam.","id":"train/atomic-layer-deposition/experimental-usecase/29/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/29/figure_1","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":2,"width":669,"height":659}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/J. 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This apparatus contains a sample load lock, a central deposition chamber equipped with the spectroscopic ellipsometer, and a surface analysis chamber.","id":"train/atomic-layer-deposition/experimental-usecase/29/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/29/figure_2","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":3,"width":664,"height":641}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/J. W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":667,"height":647,"image_format":"jpeg","image_sha256":"eb0f258e275b52136cdeb78374d72122dc20a93ec38db50731be3e9a6cc3bf18","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_40_fig_1.jpg","caption":"FiG. 1. Schematic diagram of plasma-enhanced atomic layer deposition apparatus.","id":"train/atomic-layer-deposition/experimental-usecase/40/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/40/fig_1","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic diagram of a plasma-enhanced atomic layer deposition (PEALD) system, showing mass flow controllers for N₂/H₂/Ar and SiH₄ gas lines, a TiCl₄ precursor source, a vacuum pump, and a reactor chamber equipped with a showerhead, RF plasma region, and heated substrate stage, controlled by an RF generator and computer interface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Plasma-enhanced atomic layer deposition (PEALD).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The heated substrate stage indicates that temperature control is an important parameter for surface reactions during PEALD. Maintaining a controlled substrate temperature helps ensure consistent adsorption, reaction kinetics, and film uniformity across ALD cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Plasma generation above the substrate enables direct interaction between activated species and the surface, enhancing reaction efficiency. This can improve film quality, reduce required temperatures, and allow deposition on temperature-sensitive substrates while maintaining atomic-scale thickness control.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":1,"width":680,"height":619}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":686,"height":627,"image_format":"jpeg","image_sha256":"8c7f660c0c644cc5e2b315e3590e5e8aa5bc6312605f1c17af7961c3180ccd11","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_52_figure_1.jpg","caption":"Figure 1. Schematic representation of the Teflon three-electrode measurement setup. The $\\mathrm{LiCoO}_2$ films under investigation deposited on $\\mathrm{Si / TiO_2 / Pt}$ substrates are used as working electrode during the electrochemical measurements. Layer thicknesses are 5 and $20 \\mathrm{nm}$ for $\\mathrm{TiO_2}$ and $\\mathrm{Pt}$ respectively.","id":"train/atomic-layer-deposition/experimental-usecase/52/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/52/figure_1","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A detailed diagram of an electrochemical cell setup.\"},{\"panel_id\":\"b\",\"text\":\"A cross-sectional view of a working electrode showing its layers and materials.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Layer | Material |\\n| --- | --- |\\n| Top | LiCoO₂ |\\n| Middle | Pt / TiO₂ |\\n| Bottom | Si substrate |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In a three electrode configuration, the reference electrode provides a stable potential to measure the working electrode voltage accurately. The counter electrode carries the current needed to drive the reaction without fixing the measured potential. This separation helps reduce errors from polarization at the counter electrode, so the working electrode behavior can be evaluated more reliably.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The counter electrode is the electrode that balances the current during electrochemical testing, so it participates in the overall current flow. The reference electrode is intended to provide a stable potential and ideally carries negligible current. Even if both are Li metal foils, their roles differ because of how they are connected in the measurement and how much current they are allowed to pass.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Cu plate is shown as the electrical conductor that contacts the working electrode.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"LiCoO2\\n\\nPt (20 nm)\\n\\nTiO2 (5 nm)\\n\\nSi substrate\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":405,"height":355},{"panel_id":"b","x":8,"y":308,"width":666,"height":295}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/Donders et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":678,"height":608,"image_format":"jpeg","image_sha256":"72548c6d03a9a23c75661e5bced1347e2e7f495d82fe74db95a1d2d60a179eae","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_54_figure_1.jpg","caption":"Figure 1. (Color online) (a) A schematic overview of the basic configuration of the remote plasma ALD reactors. In addition to the different reactor components, the in situ spectroscopic ellipsometer is also shown. (b) A schematic of a typical remote plasma ALD cycle for the deposition of conductive thin films.","id":"train/atomic-layer-deposition/experimental-usecase/54/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/54/figure_1","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":1,"width":667,"height":462},{"panel_id":"b","x":3,"y":466,"width":668,"height":450}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":678,"height":919,"image_format":"jpeg","image_sha256":"6f285e7647cdcd39f5ef1ed9638eae6cfa0c982e001aa6166527a8729f34d3aa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_59_fig_1.jpg","caption":"FIG. 1. (Color online) (a) Schematic representation of the remote plasma atomic layer deposition (ALD) setup for $\\mathrm{TaN}_x$ deposition. The optical access on the reactor chamber for in situ spectroscopic ellipsometry and optical emission spectroscopy is indicated. (b) Typical timing scheme for remote plasma ALD of $\\mathrm{TaN}_x$ showing the PDMAT dosing, the Ar carrier and purge gas, the plasma gas $(\\mathrm{H}_2,\\mathrm{H}_2 - \\mathrm{N}_2$ or $\\mathrm{NH}_3$ ), and the switching of the plasma power and the top valve between plasma source and reactor chamber.","id":"train/atomic-layer-deposition/experimental-usecase/59/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/59/fig_1","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"timeline chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":5,"width":669,"height":463},{"panel_id":"b","x":745,"y":26,"width":550,"height":449}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/Langereis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"59","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":1300,"height":477,"image_format":"jpeg","image_sha256":"bdb3e901f7e94e96e6cdc912383bfca37d3ec9095812f29842b69ff0dd38a912","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig4.jpg","caption":"FIG.4. Sections of the 6M cell mesh.","id":"train/atomic-layer-deposition/simulation-usecase/31/fig4","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig4","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":0,"width":635,"height":313},{"panel_id":"b","x":1,"y":311,"width":635,"height":392}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":642,"height":708,"image_format":"jpeg","image_sha256":"9c7159ddc3b22cba8b1e61232d9dfd68d1ad4df6a011fe20a66884736f7853ad","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig_2.jpg","caption":"FIG. 2. (Color online) Reaction chamber geometry and the naming used throughout the work. The gray area indicates the modeled region and the sketches representing the precursor line and outlet extension are only for illustration and not modeled.","id":"train/atomic-layer-deposition/simulation-usecase/31/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig_2","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":3,"width":668,"height":393}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":672,"height":397,"image_format":"jpeg","image_sha256":"118599acf927fed87f1f5aafebbe0ae396ff4cd34cabe858a1be4a4f22cce56f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig_3.jpg","caption":"FIG. 3. (Color online) Precursor behavior during a single cycle at $\\mathrm{Re} = 80$ The region where the sample lies is highlighted in the figure.","id":"train/atomic-layer-deposition/simulation-usecase/31/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig_3","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image depicts a series of apparatus diagrams showing a flow of reactants at different time points (t1 to t12). Each frame illustrates the progression of the flow of two reactants depicted in two different colors.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| t1 | t2 | t3 |\\n| --- | --- | --- |\\n| ![](t1.png) | ![](t2.png) | ![](t3.png) |\\n\\n| t4 | t5 | t6 |\\n| --- | --- | --- |\\n| ![](t4.png) | ![](t5.png) | ![](t6.png) |\\n\\n| t7 | t8 | t9 |\\n| --- | --- | --- |\\n| ![](t7.png) | ![](t8.png) | ![](t9.png) |\\n\\n| t10 | t11 | t12 |\\n| --- | --- | --- |\\n| ![](t10.png) | ![](t11.png) | ![](t12.png) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No the reactant inlets are different and placed perpendicular to eachother.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes they do. Both are distributed fully over the reactor and pumped down from the underside of the reactor.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In the middle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"On the top side of the reactor, such that the flows starts already above the sample.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":672,"height":547}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":680,"height":553,"image_format":"jpeg","image_sha256":"a7093b01c6a70e70b04b86689bdf72404b1d23c75897df0e95c1c72160251ad2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig_6.jpg","caption":"FIG. 6. (Color online) Section of the instantaneous precursor fields at approximately midway through the injection for $\\mathrm{Re} = 40$ (top) and $\\mathrm{Re} = 2400$ (bottom). Only the precursor field is colored in the figures.","id":"train/atomic-layer-deposition/simulation-usecase/31/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig_6","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":678,"height":285},{"panel_id":"b","x":0,"y":301,"width":678,"height":327}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":678,"height":628,"image_format":"jpeg","image_sha256":"0716854d48e9f4ad4370425cf907b41e248f8146701bc26353144411fb6d7a87","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_1.jpg","caption":"Fig. 1 - Schematics of the ALD system (Ultratech® Fiji F200): a) the ALD reactor chamber, b) the reactant feeding system.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_1","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":8,"y":10,"width":627,"height":751},{"panel_id":"b","x":604,"y":76,"width":409,"height":629}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":1013,"height":761,"image_format":"jpeg","image_sha256":"2af4b287729ea47d6a2228538833d22a89e6b9f6eaade4c53410003e42340015","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_2.jpg","caption":"Fig. 2 - Computational mesh generated for: a) the ALD reactor model, b) the reactant feeding system.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_2","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":9,"y":0,"width":358,"height":685},{"panel_id":"b","x":603,"y":49,"width":409,"height":635}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":1012,"height":772,"image_format":"jpeg","image_sha256":"800103fda990c239864d14fc77ffef8f5902a5e980da8a9daa7e3cab163d2bc3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_7.jpg","caption":"Fig. 7 - Feeding system simulation results for the pure Ar flow, with the ALD valves closed: a) pressure distribution, b) TMA mole fraction distribution.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_7","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":0,"width":409,"height":594},{"panel_id":"b","x":553,"y":2,"width":455,"height":584}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":1016,"height":636,"image_format":"jpeg","image_sha256":"98c91ee1ec0c92d1ca6ec4cc7f6bf4ed9feb35806d14132a82d097bf8681e5ca","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_5.jpg","caption":"Figure 5. Four types of spatial, rotary ASALD reactor models with various inlet and outlet geometries (ring or annular sector) and positioning (symmetric or asymmetric) of reagent inlets. Red and blue areas indicate the outlets and inlets, respectively. 3 wafers are placed at the bottom inside the reactors.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_5","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"},{"panel_id":"c","label":"apparatus diagram"},{"panel_id":"d","label":"apparatus diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Conceptual model of a spatial, rotary ASALD reactor showing one inlet/outlet configuration and reagent positioning, illustrating gas distribution over three wafers on a rotating plate.\"},{\"panel_id\":\"b\",\"text\":\"Conceptual model of a spatial, rotary ASALD reactor showing a second inlet/outlet configuration and reagent positioning, illustrating gas distribution over three wafers on a rotating plate.\"},{\"panel_id\":\"c\",\"text\":\"Conceptual model of a spatial, rotary ASALD reactor showing a third inlet/outlet configuration and reagent positioning, illustrating gas distribution over three wafers on a rotating plate.\"},{\"panel_id\":\"d\",\"text\":\"Conceptual model of a spatial, rotary ASALD reactor showing a fourth inlet/outlet configuration and reagent positioning, illustrating gas distribution over three wafers on a rotating plate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Gas flow distribution, Reactant exposure uniformity, Effect of inlet and outlet geometry, Suitability for multiscale and CFD simulations\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Asymmetric inlet geometries alter the flow distribution and interaction of reactant gases compared to symmetric designs, which can significantly affect uniformity and reactor performance.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In all four reactor configurations, three wafers are mounted on a rotating plate at the bottom of the reactor. As the plate rotates, the wafers sequentially pass through spatially separated reaction zones defined by different inlet and outlet geometries. Reagents and inert gases are introduced through specifically shaped inlets, while outlets remove gases, allowing controlled exposure of the wafer surfaces without temporal pulsing.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The inlet and outlet geometries vary in shape (ring or annular sector) and positioning (symmetric or asymmetric) across the four reactor models.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":488,"height":359},{"panel_id":"b","x":605,"y":0,"width":489,"height":358},{"panel_id":"c","x":0,"y":436,"width":490,"height":355},{"panel_id":"d","x":603,"y":438,"width":491,"height":356}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":1094,"height":842,"image_format":"jpeg","image_sha256":"0c97c23c1fe59e2e8ca513f12fa06f3c12c643a091abf753c7d809e72b777d2b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_6.jpg","caption":"Figure 6. Three wafers on the rotating plate. Each wafer has 10 equiangular sections to evaluate 10 surface area-averaged pressures to evaluate an averaged surface coverage, and source generation and consumption rates.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_6","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 6 shows an image panel of three wafers mounted on a rotating plate, with each wafer divided into 10 equiangular sections. This segmentation is used to compute surface area–averaged pressures, surface coverage, and source generation and consumption rates, enabling parallel mesoscopic simulations within the multiscale modeling framework.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Description|\\n|-----------|\\n|Image panel showing three wafers mounted on a rotating plate. Each wafer is divided into 10 equiangular sections to evaluate surface area–averaged pressures, surface coverage, and source generation and consumption rates. The segmentation enables parallel mesoscopic simulations and area-weighted averaging for multiscale modeling.|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Surface area–averaged pressure, Surface coverage, Source generation rates, Source consumption rates\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Segmenting the wafer enables localized evaluation of pressures and reaction rates, leading to a more accurate area-weighted estimation of surface coverage than considering the wafer as a single homogeneous unit.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Each of the three wafers is divided into 10 equiangular sections. This segmentation allows mesoscopic simulations to be executed in parallel for each section, and the results from all sections are combined to compute area-weighted averages of surface pressures, coverage, and source generation or consumption rates. This approach efficiently integrates the wafer-scale spatial information into the multiscale modeling framework.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Each wafer is divided into 10 equiangular sections, and there are 3 wafers mounted on the rotating plate.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":436,"height":431}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":436,"height":431,"image_format":"jpeg","image_sha256":"943dabdac32a623c40a83f5913e2742fa5e5db3e53f0d955781e891ad5a993e2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_43_figure_8.jpg","caption":"Figure 8. Electrical characterization of $\\mathbb{P}$ Ge(100) MOSCap devices. (a) Schematic of the MOSCap structure using $\\mathrm{Ni / HfO_2(24\\AA) / [Al_2O_3(n\\Delta A) / [Al_2O_3(n\\Delta A) / [Al_2O_3(n\\Delta A) / [Al_2O_3(n\\Delta A) / [Al_2O_3(n\\Delta A) / [Al_2O_3(n\\Delta A) / [Al_2O_3(n\\Delta A) / [Al_2O_3(n\\Delta A) / [Al_2O_2(n\\Delta A) / [Al_2O_2(n\\Delta A) / [Al_2O_2(n\\Delta A) / [Al_2O_2(n\\Delta A) / [Al_2O_2(n\\Delta A) / [Al_2O_2(n\\Delta A) / [Al_2O_2(n\\Delta A) / [Al_2O_2(n\\Delta A) / [Al_{2}O_{2}]$ cycles)/GeOx(5 A)]/p-Ge(100). (b) $C - V$ and (c) $J_{\\mathrm{G}} - V$ for MOSCaps with $n = 9$ cycles of $\\mathrm{Al}_2\\mathrm{O}_3$ ALD. Trends of (d) $C_{\\mathrm{max}}$ for $C - V$ at $f = 1.5\\mathrm{MHz}$ (e) $J_{\\mathrm{G}}$ at $1\\mathrm{V}$ overdrive with respect to flatband voltage $(V_{\\mathrm{FB}})$ $V = V_{\\mathrm{FB}} - 1\\mathrm{V}$ (f) $C - V$ hysteresis $(\\Delta V_{\\mathrm{FB}})$ at flatband voltage, and (g) $D_{\\mathrm{it}}$ at valence band top $(E = E_{\\mathrm{V}})$ $D_{\\mathrm{it}}$ was obtained by analyzing frequency-dependent $C - V$ characteristics based on the Castagne-Vapaille method.53","id":"train/atomic-layer-deposition/simulation-usecase/43/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/43/figure_8","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"line chart"},{"panel_id":"d","label":"line chart"},{"panel_id":"e","label":"line chart"},{"panel_id":"f","label":"line chart"},{"panel_id":"g","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic illustration of the MOS capacitor structure consisting of Ni / HfO₂ (24 Å) / [Al₂O₃ (nΔÅ) cycles] / GeOₓ (5 Å) / p-Ge(100).\"},{\"panel_id\":\"b\",\"text\":\"It is a line chart representing the Capacitance–voltage (C–V) measured at a frequency of 1.5MHz for ALD of 9 cycles\"},{\"panel_id\":\"c\",\"text\":\"It is a line chart representing the Gate current density–voltage (JG – V) characteristics for MOS capacitors with n = 9 cycles of Al₂O₃ ALD with a flat band voltage of 1 V.\"},{\"panel_id\":\"d\",\"text\":\"It is a line chart representing the Maximum capacitance (C_max) extracted from C–V measurements which was recorded at f = 1.5 MHz.\"},{\"panel_id\":\"e\",\"text\":\"It is a line chart representing the Gate leakage current density (J_G) measured at 1 V overdrive with respect to the flatband voltage (V = V_FB − 1 V).\"},{\"panel_id\":\"f\",\"text\":\"It is a line chart representing the C–V hysteresis (ΔV_FB) evaluated at the flatband voltage.\"},{\"panel_id\":\"g\",\"text\":\"It is a line chart representing the Interface trap density (D_it) at the valence band edge (E = E_V), extracted from frequency-dependent C–V measurements using the Castagne–Vapaille method.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| V_G (V) | C (µF/cm²) |\\n|---|---|\\n|-1.6 | 0.0 |\\n|-0.8 | 0.5 |\\n|0.0 | 2.5 |\\n|0.8 | 0.0 |\\n|1.6 | 0.0 |\"},{\"panel_id\":\"c\",\"text\":\"| V_G (V) | J_G (mA/cm²) |\\n|---|---|\\n|-1.6 | 10^-7 |\\n|-0.8 | 10^-5 |\\n|0.0 | 10^-4 |\\n|0.8 | 10^-2 |\\n|1.6 | 10^-7 |\"},{\"panel_id\":\"d\",\"text\":\"| ALD cycles | C_max (µF/cm²) |\\n|---|---|\\n|0 | 2.6 |\\n|4 | 2.8 |\\n|9 | 2.9 |\\n|15 | 2.1 |\"},{\"panel_id\":\"e\",\"text\":\"| ALD cycles | J_G (mA/cm²) |\\n|---|---|\\n|0 | 10^2 |\\n|4 | 10^3 |\\n|9 | 10^4 |\\n|15 | 10^5 |\"},{\"panel_id\":\"f\",\"text\":\"| ALD cycles | ∑ΔV_FB |\\n|---|---|\\n|0 | 0.33 |\\n|4 | 0.28 |\\n|9 | 0.18 |\\n|15 | 0.18 |\"},{\"panel_id\":\"g\",\"text\":\"| ALD cycles | D_it (10^12 cm^-2 eV^-1) |\\n|---|---|\\n|0 | 35 |\\n|4 | 6.47 |\\n|9 | 4.85 |\\n|15 | 4.85 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing *n* decreases Cₘₐₓ and significantly reduces J_G. This is caused by the increased total physical thickness and improved dielectric quality of the bilayer, which increases the effective oxide thickness (EOT) and creates a better barrier against electron tunneling.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. Non-volatile memory requires significant, stable hysteresis for charge storage. The low ΔV_FB shown here indicates minimal charge trapping, which is excellent for logic transistors but undesirable for memory function.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For high-speed logic, 9 cycles is the optimal choice. Transistor switching speed and drive current depend directly on Gate Capacitance (C_{ox}). The 9-cycle sample maximizes this speed metric (C_{max}) while providing sufficient passivation (D_{it} saturation, graph g), whereas the 15-cycle sample sacrifices too much performance (speed) for a marginal gain in leakage reduction.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It serves as a benchmark process condition to evaluate the electrical properties (C-V and J-V) of a specific, intermediate gate stack thickness. This establishes a baseline for comparing the trends shown in the subsequent labels (d-g).\"}]}]","bbox":[{"panel_id":"a","x":47,"y":51,"width":208,"height":200},{"panel_id":"b","x":287,"y":30,"width":261,"height":243},{"panel_id":"c","x":577,"y":28,"width":267,"height":245},{"panel_id":"d","x":0,"y":313,"width":201,"height":228},{"panel_id":"e","x":432,"y":310,"width":197,"height":231},{"panel_id":"f","x":217,"y":317,"width":198,"height":224},{"panel_id":"g","x":652,"y":316,"width":192,"height":225}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/Yuanxia Zheng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":844,"height":541,"image_format":"jpeg","image_sha256":"a4dafa71984b1731451b9654743c2ff8510f0dc53ad33bf2329aaad534791b8a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_13_figure_1.jpg","caption":"Figure 1. Schematic diagram of BMR HiEtch inductively coupled plasma (ICP) etcher.","id":"train/atomic-layer-etching/experimental-usecase/13/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/13/figure_1","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":1,"width":948,"height":790}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/Low-Damage and Self-Limiting (Al)GaN Etching Process.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":950,"height":792,"image_format":"jpeg","image_sha256":"5988cbf915cef787ab75860a8381a7d1df6aa5b86b510490a1878407bbe0198c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_13_figure_7.jpg","caption":"Figure 7. Cross-section of the Schottky diodes fabricated on n-GaN.","id":"train/atomic-layer-etching/experimental-usecase/13/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/13/figure_7","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":1,"width":384,"height":689}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/Low-Damage and Self-Limiting (Al)GaN Etching Process.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":392,"height":700,"image_format":"jpeg","image_sha256":"be385d6411585bae5ec46bb308b61eacb846989a3638c3b231c9f1316330933b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_28_fig1.jpg","caption":"FIG.1. (a) Schematic of ICP-type PECVD reactor and (b) sequence of the isotropic plasma ALE process for $\\mathrm{Al}_2\\mathrm{O}_3$ etching.","id":"train/atomic-layer-etching/experimental-usecase/28/fig1","sample_id":"atomic-layer-etching/experimental-usecase/28/fig1","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"process timing diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":36,"y":49,"width":635,"height":269},{"panel_id":"b","x":36,"y":49,"width":635,"height":269}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/Atomic layer etching of Al2O3 with NF3 plasma fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":673,"height":695,"image_format":"jpeg","image_sha256":"98ea15b0b7cad0a6b8b5a34f0688784b6f1975fea9532e141789ec1e696fc32f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_33_fig_2.jpg","caption":"FIG. 2. Schematic of ALE chamber for $300 - \\text{mm}$ wafer processing. Process gases are injected into the ICP source, and reactive radicals are transported to the processing chamber through down-flow. The carrier wafer is annealed using an IR lamp during the desorption step.","id":"train/atomic-layer-etching/experimental-usecase/33/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/33/fig_2","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The diagram illustrates a processing chamber, highlighting components like the ICP source, IR lamp, plasma, radicals, He gas, wafer stage, and wafer.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is unlikely that this reactor is used for this as the plasma tube is significantly smaller than the wafer size.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The He is likely used for temperature control of the wafer stage and with that the wafer.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The processing gases should also be pumped away so a vacuum pump is required.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The wafers are 300 mm size wafers\"}]}]","bbox":[{"panel_id":"a","x":6,"y":5,"width":663,"height":627}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/Atomic layer etching of titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":672,"height":636,"image_format":"jpeg","image_sha256":"dadb8fe51ce3ef892cdd457bbb57d478a4d4edb46c176621dce43a723f94fd85","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_45_figure_8.jpg","caption":"Figure 8. Film thickness for (a) initial TiN film and (b) after 200 TiN ALE cycles at $250^{\\circ}\\mathrm{C}$ for different locations in the reactor.","id":"train/atomic-layer-etching/experimental-usecase/45/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/45/figure_8","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic of the hot-wall reactor showing five TiN sample positions distributed over 12.7 cm, with reactant flow from left to right toward the pump.\"},{\"panel_id\":\"b\",\"text\":\"Film thickness versus sample location before and after 200 TiN ALE cycles using O₃ and HF at 250°C. The initial TiN thickness is uniform at approximately 75 Å across all positions. After ALE, positions 2 through 5 show consistent etching with an etch rate of 0.19 Å/cycle, while position 1 (nearest to reactant entry) shows slightly higher etching at 0.27 Å/cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample Location | Initial TiN Thickness (Å) | After 200 Cycles ALE at 250°C (Å) |\\n|-----------------|--------------------------|----------------------------------|\\n| 1 | 75 | 20 |\\n| 2 | 75 | 35 |\\n| 3 | 75 | 30 |\\n| 4 | 75 | 35 |\\n| 5 | 75 | 40 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 250°C, the TiN ALE process shows good uniformity across most of the reactor. Positions 2 through 5 all exhibit a consistent etch rate of approximately 0.19 Å/cycle. However, position 1, closest to the reactant entry, shows a slightly higher etch rate of 0.27 Å/cycle. This enhanced etching near the inlet likely results from higher local reactant concentrations before any depletion occurs along the flow path.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"To assess the spatial uniformity of the TiN ALE process and detect any effects from reactant depletion or decomposition along the reactor.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The results suggest reasonably good uniformity at 250°C. Four out of five positions show identical etch rates, with only the position nearest the reactant inlet displaying elevated etching. For semiconductor manufacturing applications where precise thickness control is critical, this level of uniformity would be acceptable for most of the reactor volume, though the inlet region may require optimization or sample positioning adjustments.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 75 Å, uniform across all five sample positions.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":1,"width":663,"height":175},{"panel_id":"b","x":1,"y":173,"width":576,"height":384}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/Thermal Atomic Layer Etching of Titanium Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":672,"height":559,"image_format":"jpeg","image_sha256":"1256d4875ba9841f98f294252e391dad46ef3e9b91aa65bcde9d8dd736dcc2b5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_45_figure_9.jpg","caption":"Figure 9. Film thickness for (a) initial TiN film and (b) after 200 TiN ALE cycles at $350^{\\circ}\\mathrm{C}$ for different locations in the reactor.","id":"train/atomic-layer-etching/experimental-usecase/45/figure_9","sample_id":"atomic-layer-etching/experimental-usecase/45/figure_9","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic of the hot-wall reactor showing five TiN sample positions over 12.7 cm, with reactant flow from left toward the pump.\"},{\"panel_id\":\"b\",\"text\":\"Film thickness versus sample location before and after 200 TiN ALE cycles using O₃ and HF at 350°C. Initial thickness is uniform at approximately 72 Å. After ALE, significant non-uniformity appears: upstream positions (1 through 3) show substantial etching to approximately 20 to 25 Å, while downstream positions (4 and 5) retain more material at 35 to 47 Å due to reduced O₃ concentration from thermal decomposition.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample Location | Initial TiN Thickness (Å) | After 200 Cycles ALE at 250°C (Å) |\\n|-----------------|--------------------------|----------------------------------|\\n| 1 | 75 | 20 |\\n| 2 | 75 | 20 |\\n| 3 | 75 | 22 |\\n| 4 | 75 | 30 |\\n| 5 | 75 | 45 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The uniformity is significantly worse at 350°C compared to 250°C. At 250°C, positions 2 through 5 showed consistent etch rates of 0.19 Å/cycle. At 350°C, there is a clear gradient with downstream positions showing progressively less etching. Position 5 retains approximately 47 Å while positions 1 through 3 are etched to around 20 to 25 Å. This gradient results from O₃ decomposition on reactor surfaces at higher temperature, depleting the oxidant before it reaches downstream samples.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thermal decomposition of O₃ on the hot-wall reactor surfaces, which reduces O₃ concentration at downstream positions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This result indicates that operating temperature must be carefully selected to balance etch rate and uniformity. While higher temperatures may offer faster kinetics, O₃ decomposition limits the useful reactor volume and creates thickness gradients across the substrate. For applications requiring uniform etching over large areas, 250°C appears preferable. Alternatively, reactor designs that minimize O₃ surface decomposition or provide distributed oxidant injection could extend the uniform etching region at higher temperatures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Positions 1, 2, and 3 (upstream, nearest to reactant entry), with final thicknesses of approximately 22, 22, and 24 Å respectively.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":669,"height":162},{"panel_id":"b","x":2,"y":165,"width":582,"height":387}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/Thermal Atomic Layer Etching of Titanium Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:image_caption"},"width":670,"height":558,"image_format":"jpeg","image_sha256":"9cb0a53542b7f9d6401dd3cb6ffb872b2cfd1e1662e682131a3a9ef5e68736d0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_7_62d1dd2fa406668b8eddd3c6316f3a8af1a41885fe6affb8d6b685b0bcdeb813.jpg","caption":"","id":"train/atomic-layer-etching/experimental-usecase/7/62d1dd2fa406668b8eddd3c6316f3a8af1a41885fe6affb8d6b685b0bcdeb813","sample_id":"atomic-layer-etching/experimental-usecase/7/62d1dd2fa406668b8eddd3c6316f3a8af1a41885fe6affb8d6b685b0bcdeb813","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":667,"height":408}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/62d1dd2fa406668b8eddd3c6316f3a8af1a41885fe6affb8d6b685b0bcdeb813.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/62d1dd2fa406668b8eddd3c6316f3a8af1a41885fe6affb8d6b685b0bcdeb813.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/Atomic Layer Etching What CanWe Learn from Atomic Layer Deposition.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"not_found"},"width":667,"height":408,"image_format":"jpeg","image_sha256":"674ea17a854fe0bafb85e7001a2eec7727186092dd16a60ad99b5eeedbed5f66","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_1.jpg","caption":"Fig 1. t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t","id":"train/atomic-layer-etching/simulation-usecase/16/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_1","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a cross-sectional view of a fin-based transistor.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates a cross-sectional view of a nanowire-based transistor.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"One of the benefits is the additional control over the current by the gate as it is fully wrapped around it.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An important consideration is that due to the 3D nature of the device, a lot of processes need to be conformal.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A transistor also needs source and drain contacts, such that a current can flow through the device.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Silicon\"}]}]","bbox":[{"panel_id":"a","x":8,"y":12,"width":556,"height":236},{"panel_id":"b","x":634,"y":0,"width":541,"height":255}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":1183,"height":297,"image_format":"jpeg","image_sha256":"95aaefb970f509f72695207b959c0361e67c67d93fbb68ecb559e5dd7a2beb70","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_2.jpg","caption":"Fig 2. t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t h t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t h","id":"train/atomic-layer-etching/simulation-usecase/16/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_2","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"process flow diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A schematic diagram illustrating the setup of an ALD system involving precursor and carrier gas inlets.\"},{\"panel_id\":\"b\",\"text\":\"A diagram depicting the flow of precursor gases through reaction zones and effluent collection in an ALD tool.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the effluent zones the pure used gases can be found (carrier gas and precursor gas), but also volatile reaction products.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With a gas shield the different precursor gases are shielded from eachother.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For supercycle processes usually more than two reactants are required. This is not possible with this setup. The figure shows the inlet of just two precursor gases.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The pump is used to make sure that the sample is unable to move with respect to the sample table.\"}]}]","bbox":[{"panel_id":"a","x":636,"y":8,"width":544,"height":282},{"panel_id":"b","x":9,"y":161,"width":558,"height":142}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":1180,"height":353,"image_format":"jpeg","image_sha256":"30a1d38a1c00edc5ca74dd2789e0aeee64b42db30c40339827ae095ef46e45d6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_17_fig4.jpg","caption":"Fig.4. reactor, and (d) the inclined plate reactor.","id":"train/atomic-layer-etching/simulation-usecase/17/fig4","sample_id":"atomic-layer-etching/simulation-usecase/17/fig4","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"},{"panel_id":"c","label":"apparatus diagram"},{"panel_id":"d","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":30,"y":8,"width":389,"height":493},{"panel_id":"b","x":576,"y":11,"width":404,"height":492},{"panel_id":"c","x":0,"y":545,"width":437,"height":593},{"panel_id":"d","x":568,"y":545,"width":425,"height":593}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/Multiscale computational fluid dynamics modeling of thermal atomic layer etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":994,"height":1145,"image_format":"jpeg","image_sha256":"889a003da50c4b3994473e0899709bbc235b16f9657d1604ab21f80f7864cc39","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_17_fig_3.jpg","caption":"Fig 3. t t to color in this figure legend, the reader is referred to the web version of this article.)","id":"train/atomic-layer-etching/simulation-usecase/17/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/17/fig_3","subset":"apparatus-diagram","split":"train","classification":[{"panel_id":"a","label":"apparatus diagram"},{"panel_id":"b","label":"apparatus diagram"},{"panel_id":"c","label":"apparatus diagram"},{"panel_id":"d","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":9,"y":0,"width":544,"height":180},{"panel_id":"b","x":597,"y":0,"width":544,"height":180},{"panel_id":"c","x":9,"y":277,"width":544,"height":212},{"panel_id":"d","x":597,"y":277,"width":544,"height":176}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/Multiscale computational fluid dynamics modeling of thermal atomic layer etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"apparatus diagram","caption_source":"content.json:img_caption"},"width":1150,"height":489,"image_format":"jpeg","image_sha256":"7476d3eaa3743449bc48bf7f612ae298020c6842b375e068b15ad375d922501a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/area-chart/train/metadata.jsonl b/subsets/area-chart/train/metadata.jsonl index 5041c515f95e311b522113e0e67ad06ea945f816..4a063250d7b91fb4a236bac87e83e0868d71f08c 100644 --- a/subsets/area-chart/train/metadata.jsonl +++ b/subsets/area-chart/train/metadata.jsonl @@ -1 +1 @@ -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_12.jpg","caption":"FIG. 12. (Color online) Trend of etch depth per cycle (EPC) as a function of ion bombardment time $(T_{I})$ and passivation time $(T_{P})$ . The solid line represents an EPC of 1, and the shaded region is the window from $0.9 < \\mathrm{EPC} < 1.1$ .","id":"train/atomic-layer-etching/simulation-usecase/3/fig_12","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_12","subset":"area-chart","split":"train","classification":[{"panel_id":"a","label":"area chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"area chart","caption_source":"content.json:img_caption"},"width":575,"height":492,"image_format":"jpeg","image_sha256":"1b13cf1e19b524f8184a8bd08fb27db7ee2d703f2aa83cec9e8280b65dda37a2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":571,"height":484}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The area chart illustrates the relationship between etch per cycle (EPC) with respect to passivation time (\\\\(T_p\\\\)) and ion bombardment time (\\\\(T_I\\\\)), with shaded regions indicating specific ranges of EPC.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Passivation Time (Tp, ms) | Ion Bombardment Time (Ti, s) AR=2 | AR=4 | AR=6 |\\n|---------------------------|------------------------------------|------|------|\\n| 5 | 1.30 | 1.30 | 1.30 |\\n| 25 | 0.70 | 0.90 | 1.10 |\\n| 45 | 0.40 | 0.60 | 0.90 |\\n| 64 | 0.30 | 0.45 | 0.70 |\\n| 84 | 0.25 | 0.35 | 0.55 |\\n| 104 | 0.20 | 0.30 | 0.45 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To investigate the pulse time parameter space, simulations were performed for TP from 5 to 105 ms, and TI from 0.1 to 1.4 s.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The solid lines are for conditions that produce EPC=1 ML, and the shaded areas indicate the range of 0.9x+, CO+, C2Hx+, CO2+) against mass (amu). The y-axis represents the peak ion current on a logarithmic scale, while the x-axis shows the mass in atomic mass units.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Mass (amu) | QMS: Peak ion current (A) |\\n|---|---|\\n| 12 | 2*10^-10 |\\n| 13 | 8*10^-11 |\\n| 14 | 1*10^-11 |\\n| 15 | 2*10^-10 |\\n| 24 | 2*10^-13 |\\n| 25 | 4*10^-13 |\\n| 26 | 2*10^-12 |\\n| 27 | 2*10^-12 |\\n| 28 | 3*10^-11 |\\n| 29 | 3*10^-12 |\\n| 30 | 3*10^-12 |\\n| 44 | 7*10^-12 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 12 - 15 amu.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"28 amu.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 24 - 30 amu.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"44 amu.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_18_fig_2.jpg","caption":"FIG. 2. Distribution of coordination numbers for the bulk $\\mathsf{aHfO_2}$ model used in this study that was prepared using classical molecular dynamics.","id":"test/atomic-layer-etching/simulation-usecase/18/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/18/fig_2","subset":"bar-chart","split":"test","classification":[{"panel_id":"a","label":"bar chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/Origin of enhanced thermal atomic layer etching of amorphous HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:img_caption"},"width":669,"height":447,"image_format":"jpeg","image_sha256":"620c91904954add8d0c747ee04122658ae6170a60afbcd76565446d5d6ee77be","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":3,"width":661,"height":443}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a bar chart of the number of atoms at various coordination numbers for oxygen (O) and hafnium (Hf). Oxygen has a higher count at coordination numbers 3, while hafnium shows a peak at coordination number 7.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Coordination Number | O | Hf |\\n|---|---|---|\\n| 2 | 3 | - |\\n| 3 | 98 | - |\\n| 4 | 42 | - |\\n| 5 | - | 2 |\\n| 6 | - | 32 |\\n| 7 | - | 34 |\\n| 8 | - | 4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3 or 4 for oxygen, and 7 for Hf.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The number of oxygen atoms increases for 2 to 3 as a coordination number. Then it decreases for 4.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen, the oxygen atoms has a higher number of atoms at a lower coordination number.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Theoretical studies require knowledge of the coordination number. For this reason, it is important to determine the amount that dominates the bulk model.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_04961dd67c8a719f41a4bdbc44ee1c49b3357525fdfa15b93e9df870f3b868cc.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/34/04961dd67c8a719f41a4bdbc44ee1c49b3357525fdfa15b93e9df870f3b868cc","sample_id":"atomic-layer-etching/simulation-usecase/34/04961dd67c8a719f41a4bdbc44ee1c49b3357525fdfa15b93e9df870f3b868cc","subset":"bar-chart","split":"test","classification":[{"panel_id":"a","label":"bar chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/04961dd67c8a719f41a4bdbc44ee1c49b3357525fdfa15b93e9df870f3b868cc.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/04961dd67c8a719f41a4bdbc44ee1c49b3357525fdfa15b93e9df870f3b868cc.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"not_found"},"width":509,"height":436,"image_format":"jpeg","image_sha256":"814910c13b589a6d68b429060e588444be116c5e66859e1936dea6b4909a50bc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":509,"height":436}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart shows the distribution of coverage fraction values relative to the mean. Most measurements fall between −σ and +σ, with the highest frequencies near the mean. Very few values occur at the extreme ±3σ bins, indicating a narrow spread around μ.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Coverage Fraction | Frequency |\\n|-------------------|-----------|\\n| -3σ | 1 |\\n| -2σ | 4 |\\n| -σ | 20 |\\n| μ | 19 |\\n| +σ | 16 |\\n| +2σ | 10 |\\n| +3σ | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The distribution is strongly centered around the mean. The highest frequencies occur near μ and within ±σ, while the number of observations drops off as the coverage fraction moves toward ±2σ and ±3σ. This indicates that most values cluster close to the mean with relatively few outliers.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"μ = 0.9814.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The −σ bin, the mean (μ) bin, and the +σ bin.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_2d6ab73da07b7b6bbf9a4fc1ae8384de54332a287fa24f422745afeb7863d9c9.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/34/2d6ab73da07b7b6bbf9a4fc1ae8384de54332a287fa24f422745afeb7863d9c9","sample_id":"atomic-layer-etching/simulation-usecase/34/2d6ab73da07b7b6bbf9a4fc1ae8384de54332a287fa24f422745afeb7863d9c9","subset":"bar-chart","split":"test","classification":[{"panel_id":"b","label":"bar chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/2d6ab73da07b7b6bbf9a4fc1ae8384de54332a287fa24f422745afeb7863d9c9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/2d6ab73da07b7b6bbf9a4fc1ae8384de54332a287fa24f422745afeb7863d9c9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"b","first_classification_label":"bar chart","caption_source":"not_found"},"width":503,"height":436,"image_format":"jpeg","image_sha256":"bea52bc8f608d6e1fd4f5134a702eb921207fb49f3ad1217d880ec9f3ecacbbb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":0,"width":503,"height":436}],"summarization":"[{\"panel_id\":\"b\",\"text\":\"The bar chart shows the distribution of etching fraction values relative to the mean. Most measurements cluster around μ = 0.7777, with the highest frequency near the center. The number of observations decreases toward the ±3σ bins, indicating a relatively narrow spread with few extreme values.\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"| Etching Fraction | Frequency |\\n|------------------|-----------|\\n|-3σ | 1 |\\n|-2σ | 4 |\\n|-σ | 20 |\\n|μ | 25 |\\n|+σ | 12 |\\n|+2σ | 5 |\\n|+3σ | 2 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The distribution is centered around the mean, with most values occurring within ±σ. Frequencies drop off as the etching fraction moves toward ±2σ and ±3σ, indicating that extreme values are relatively uncommon.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"μ = 0.7777.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The μ bin, the −σ bin, and the +σ bin.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_11.jpg","caption":"Fig. 11. Histograms depicting the distribution of the coverage fraction (a), etching fraction (b), and etching per cycle (c) for a sample size of 50 multiscale CFD data points for 20 sccm HF flow rate, 40 sccm TMA flow rate, and $80~\\mathrm{mm / s}$ substrate velocity without the influence of disturbances. Each bar represents a standard deviation, $\\sigma$ from the mean, $\\mu$ of the data set.","id":"test/atomic-layer-etching/simulation-usecase/34/fig_11","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_11","subset":"bar-chart","split":"test","classification":[{"panel_id":"c","label":"bar chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"c","first_classification_label":"bar chart","caption_source":"content.json:image_caption"},"width":512,"height":445,"image_format":"jpeg","image_sha256":"60baea328e7fdfc8611054a5828426acc4bdacf4cd0722ce6fea8a444e8ee57e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":0,"y":0,"width":512,"height":445}],"summarization":"[{\"panel_id\":\"c\",\"text\":\"The bar chart shows the distribution of etching per cycle values. Most measurements cluster around the mean (μ = 0.3511 Å/cycle), with the highest frequencies near μ and −σ. Frequencies decrease toward the ±3σ bins, indicating relatively few extreme values.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Etching per Cycle (Å/cycle) | Frequency |\\n|-----------------------------|-----------|\\n| -3σ | 1 |\\n| -2σ | 4 |\\n| -σ | 23 |\\n| μ | 15 |\\n| +σ | 14 |\\n| +2σ | 5 |\\n| +3σ | 2 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The distribution is centered around the mean, with most values occurring near μ and within ±σ. Frequencies decrease toward the outer bins. This shows that extreme etching rates are relatively uncommon.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"μ = 0.3511 Å/cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"−σ bin, μ bin.\"}]}]"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_2.jpg","caption":"FIG. 2. (Color online) Number of publications per year on the subject of plasma-assisted ALD, between 1991 and 2011 (status May 31, 2011). The search was run in published abstracts using Web of Science (Ref. 23). The search terms included \"plasma-assisted ALD,\" \"plasma-enhanced ALD,\" \"radical enhanced ALD,\" \"remote plasma ALD,\" \"direct plasma ALD,\" and \"plasma ALD.\" The first report of a plasma-assisted ALD process by De Keijser and Van Opdorp (Philips Research Laboratories, Eindhoven), published in 1991, is also included.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_2","subset":"bar-chart","split":"test","classification":[{"panel_id":"a","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart presents the number of publications per year referencing plasma-assisted ALD and related terms. It shows minimal activity before 2000, followed by rapid growth after 2005, indicating a strong rise in research interest and adoption of plasma-based ALD methods.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Year | Publications per Year |\\n|------|-----------------------|\\n| 1990 | 1 |\\n| 1995 | 1 |\\n| 2000 | 1 |\\n| 2005 | 10 |\\n| 2010 | 55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The number of publications remained low through the 1990s but began increasing sharply after 2000, reaching a significant rise after 2005, reflecting growing research and industrial interest in plasma-assisted ALD.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Each bar represents the total number of publications per year that include plasma-assisted ALD and related keywords.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Plasma-assisted, Plasma-enhanced, Radical-enhanced, Remote plasma, Direct plasma ALD\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":684,"height":525}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:img_caption"},"width":684,"height":525,"image_format":"jpeg","image_sha256":"cc44f53361d1a94a999978171e546bb4aa7c06c0565a85a5cc3e08c92cde45bf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_39_fig_12.jpg","caption":"FIG. 12. (Color online) Bar graph mass spectrum during the $\\mathrm{O}_2$ plasma step as composed from the time-resolved quadrupole mass spectrometry (QMS) measurements carried out in the Oxford Instruments FlexAL reactor. The spectrum has been corrected for (background) signals during regular $\\mathrm{O}_2$ plasma operation and shows therefore only species that are related to the ALD surface reactions taking place during the $\\mathrm{O}_2$ plasma step. The most likely ions contributing to the signals at the selected mass-to-charge ratios $(m / z)$ are indicated.","id":"test/atomic-layer-deposition/experimental-usecase/39/fig_12","sample_id":"atomic-layer-deposition/experimental-usecase/39/fig_12","subset":"bar-chart","split":"test","classification":[{"panel_id":"a","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart displays the peak ion current (A) of various ions (CHx+, CO+, C2Hx+, CO2+) against mass (amu). The y-axis represents the peak ion current on a logarithmic scale, while the x-axis shows the mass in atomic mass units.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Mass (amu) | QMS: Peak ion current (A) |\\n|---|---|\\n| 12 | 2*10^-10 |\\n| 13 | 8*10^-11 |\\n| 14 | 1*10^-11 |\\n| 15 | 2*10^-10 |\\n| 24 | 2*10^-13 |\\n| 25 | 4*10^-13 |\\n| 26 | 2*10^-12 |\\n| 27 | 2*10^-12 |\\n| 28 | 3*10^-11 |\\n| 29 | 3*10^-12 |\\n| 30 | 3*10^-12 |\\n| 44 | 7*10^-12 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 12 - 15 amu.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"28 amu.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 24 - 30 amu.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"44 amu.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":673,"height":528}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/images/fig_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/Heil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:image_caption"},"width":673,"height":528,"image_format":"jpeg","image_sha256":"95fdb71c7e563f9ee8a0c2e4e2623bd5e404b80a8c4116f2760d1339e73d3b58","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_18_fig_2.jpg","caption":"FIG. 2. Distribution of coordination numbers for the bulk $\\mathsf{aHfO_2}$ model used in this study that was prepared using classical molecular dynamics.","id":"test/atomic-layer-etching/simulation-usecase/18/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/18/fig_2","subset":"bar-chart","split":"test","classification":[{"panel_id":"a","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a bar chart of the number of atoms at various coordination numbers for oxygen (O) and hafnium (Hf). Oxygen has a higher count at coordination numbers 3, while hafnium shows a peak at coordination number 7.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Coordination Number | O | Hf |\\n|---|---|---|\\n| 2 | 3 | - |\\n| 3 | 98 | - |\\n| 4 | 42 | - |\\n| 5 | - | 2 |\\n| 6 | - | 32 |\\n| 7 | - | 34 |\\n| 8 | - | 4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3 or 4 for oxygen, and 7 for Hf.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The number of oxygen atoms increases for 2 to 3 as a coordination number. Then it decreases for 4.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen, the oxygen atoms has a higher number of atoms at a lower coordination number.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Theoretical studies require knowledge of the coordination number. For this reason, it is important to determine the amount that dominates the bulk model.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":3,"width":661,"height":443}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/Origin of enhanced thermal atomic layer etching of amorphous HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:img_caption"},"width":669,"height":447,"image_format":"jpeg","image_sha256":"620c91904954add8d0c747ee04122658ae6170a60afbcd76565446d5d6ee77be","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_04961dd67c8a719f41a4bdbc44ee1c49b3357525fdfa15b93e9df870f3b868cc.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/34/04961dd67c8a719f41a4bdbc44ee1c49b3357525fdfa15b93e9df870f3b868cc","sample_id":"atomic-layer-etching/simulation-usecase/34/04961dd67c8a719f41a4bdbc44ee1c49b3357525fdfa15b93e9df870f3b868cc","subset":"bar-chart","split":"test","classification":[{"panel_id":"a","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart shows the distribution of coverage fraction values relative to the mean. Most measurements fall between −σ and +σ, with the highest frequencies near the mean. Very few values occur at the extreme ±3σ bins, indicating a narrow spread around μ.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Coverage Fraction | Frequency |\\n|-------------------|-----------|\\n| -3σ | 1 |\\n| -2σ | 4 |\\n| -σ | 20 |\\n| μ | 19 |\\n| +σ | 16 |\\n| +2σ | 10 |\\n| +3σ | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The distribution is strongly centered around the mean. The highest frequencies occur near μ and within ±σ, while the number of observations drops off as the coverage fraction moves toward ±2σ and ±3σ. This indicates that most values cluster close to the mean with relatively few outliers.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"μ = 0.9814.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The −σ bin, the mean (μ) bin, and the +σ bin.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":509,"height":436}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/04961dd67c8a719f41a4bdbc44ee1c49b3357525fdfa15b93e9df870f3b868cc.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/04961dd67c8a719f41a4bdbc44ee1c49b3357525fdfa15b93e9df870f3b868cc.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"not_found"},"width":509,"height":436,"image_format":"jpeg","image_sha256":"814910c13b589a6d68b429060e588444be116c5e66859e1936dea6b4909a50bc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_2d6ab73da07b7b6bbf9a4fc1ae8384de54332a287fa24f422745afeb7863d9c9.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/34/2d6ab73da07b7b6bbf9a4fc1ae8384de54332a287fa24f422745afeb7863d9c9","sample_id":"atomic-layer-etching/simulation-usecase/34/2d6ab73da07b7b6bbf9a4fc1ae8384de54332a287fa24f422745afeb7863d9c9","subset":"bar-chart","split":"test","classification":[{"panel_id":"b","label":"bar chart"}],"summarization":"[{\"panel_id\":\"b\",\"text\":\"The bar chart shows the distribution of etching fraction values relative to the mean. Most measurements cluster around μ = 0.7777, with the highest frequency near the center. The number of observations decreases toward the ±3σ bins, indicating a relatively narrow spread with few extreme values.\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"| Etching Fraction | Frequency |\\n|------------------|-----------|\\n|-3σ | 1 |\\n|-2σ | 4 |\\n|-σ | 20 |\\n|μ | 25 |\\n|+σ | 12 |\\n|+2σ | 5 |\\n|+3σ | 2 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The distribution is centered around the mean, with most values occurring within ±σ. Frequencies drop off as the etching fraction moves toward ±2σ and ±3σ, indicating that extreme values are relatively uncommon.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"μ = 0.7777.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The μ bin, the −σ bin, and the +σ bin.\"}]}]","bbox":[{"panel_id":"b","x":0,"y":0,"width":503,"height":436}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/2d6ab73da07b7b6bbf9a4fc1ae8384de54332a287fa24f422745afeb7863d9c9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/2d6ab73da07b7b6bbf9a4fc1ae8384de54332a287fa24f422745afeb7863d9c9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"b","first_classification_label":"bar chart","caption_source":"not_found"},"width":503,"height":436,"image_format":"jpeg","image_sha256":"bea52bc8f608d6e1fd4f5134a702eb921207fb49f3ad1217d880ec9f3ecacbbb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_11.jpg","caption":"Fig. 11. Histograms depicting the distribution of the coverage fraction (a), etching fraction (b), and etching per cycle (c) for a sample size of 50 multiscale CFD data points for 20 sccm HF flow rate, 40 sccm TMA flow rate, and $80~\\mathrm{mm / s}$ substrate velocity without the influence of disturbances. Each bar represents a standard deviation, $\\sigma$ from the mean, $\\mu$ of the data set.","id":"test/atomic-layer-etching/simulation-usecase/34/fig_11","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_11","subset":"bar-chart","split":"test","classification":[{"panel_id":"c","label":"bar chart"}],"summarization":"[{\"panel_id\":\"c\",\"text\":\"The bar chart shows the distribution of etching per cycle values. Most measurements cluster around the mean (μ = 0.3511 Å/cycle), with the highest frequencies near μ and −σ. Frequencies decrease toward the ±3σ bins, indicating relatively few extreme values.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Etching per Cycle (Å/cycle) | Frequency |\\n|-----------------------------|-----------|\\n| -3σ | 1 |\\n| -2σ | 4 |\\n| -σ | 23 |\\n| μ | 15 |\\n| +σ | 14 |\\n| +2σ | 5 |\\n| +3σ | 2 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The distribution is centered around the mean, with most values occurring near μ and within ±σ. Frequencies decrease toward the outer bins. This shows that extreme etching rates are relatively uncommon.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"μ = 0.3511 Å/cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"−σ bin, μ bin.\"}]}]","bbox":[{"panel_id":"c","x":0,"y":0,"width":512,"height":445}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"c","first_classification_label":"bar chart","caption_source":"content.json:image_caption"},"width":512,"height":445,"image_format":"jpeg","image_sha256":"60baea328e7fdfc8611054a5828426acc4bdacf4cd0722ce6fea8a444e8ee57e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/bar-chart/train/metadata.jsonl b/subsets/bar-chart/train/metadata.jsonl index 9ef5991b49b43df1e05e5181eb98ddb945b91532..240c6bf76600811987a965f8535ba29a8c3f8a66 100644 --- a/subsets/bar-chart/train/metadata.jsonl +++ b/subsets/bar-chart/train/metadata.jsonl @@ -1,12 +1,12 @@ -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_5.jpg","caption":"Figure 5. In situ QMS measurements for (a) $m = 66$ from cyclopentadiene and (b) $m = 48$ from ozone, measured during ITO ALD using $5\\%$ $\\mathrm{SnO_2}$ cycles. The application of the $\\mathrm{SnO_2}$ ALD cycles is indicated.","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_5","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"},{"panel_id":"b","label":"bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:image_caption"},"width":1147,"height":578,"image_format":"jpeg","image_sha256":"b8e96dd1bd0d529443fd4c9718b2718d33718dc42f5d9df400e7bd8fcd81c713","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":0,"width":557,"height":575},{"panel_id":"b","x":591,"y":12,"width":556,"height":565}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart shows the increasing intensity of the m=66 signal (C₅H₆) over time during repeated SnO₂ ALD cycles.\"},{\"panel_id\":\"b\",\"text\":\"The bar chart shows the fluctuating m=48 signal (ozone) intensity over time, with signal decay after each pulse.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | m=66 Signal (AU) | m=48 Signal (AU) |\\n|----------|------------------|------------------|\\n| 0 | 0 | 0 |\\n| 100 | 2 | 2 |\\n| 200 | 4 | 3 |\\n| 300 | 6 | 5 |\\n| 400 | 9 | 6 |\\n| 500 | 12 | 7 |\\n| 600 | 15 | 3 |\\n| 700 | 13 | 2 |\\n| 800 | 14 | 1 |\\n| 900 | 15 | 0 |\\n| 1000 | 14 | 0 |\\n| 1100 | 0 | 0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Precursor injection timing , Byproduct removal, Reaction step resolution\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Cyclopentadiene signal increases with each cycle, while ozone shows decaying or pulsed signals that drop off more quickly.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"m=66 (cyclopentadiene), m=48 (ozone)\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_66_figure_5.jpg","caption":"Figure 5. Statistical distributions of $H_{c}$ variation for (a) $\\mathrm{ZnO}$ ; (b) oxygen-deficient $\\mathrm{ZnO}$ ; and (c) $\\mathrm{Ni}$ , (d) $\\mathrm{Co}$ , and (e) Fe-doped $\\mathrm{ZnO}$ layers.","id":"train/atomic-layer-deposition/experimental-usecase/66/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/66/figure_5","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"},{"panel_id":"b","label":"bar chart"},{"panel_id":"c","label":"bar chart"},{"panel_id":"d","label":"bar chart"},{"panel_id":"e","label":"bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/Paskaleva et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"66","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:image_caption"},"width":841,"height":811,"image_format":"jpeg","image_sha256":"ac351459c727715169939cee62a57259cb96e6fb73ea306663b0c6f42bb61da0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":40,"y":0,"width":798,"height":140},{"panel_id":"b","x":40,"y":141,"width":797,"height":144},{"panel_id":"c","x":33,"y":287,"width":800,"height":144},{"panel_id":"d","x":37,"y":430,"width":800,"height":163},{"panel_id":"e","x":40,"y":595,"width":798,"height":213}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart shows the distribution of coercivity (Hc) values for ZnO samples\"},{\"panel_id\":\"b\",\"text\":\"The bar chart shows the distribution of coercivity (Hc) values for oxygen-deficient ZnO samples\"},{\"panel_id\":\"c\",\"text\":\"The bar chart shows the distribution of coercivity (Hc) values for ZnO:Ni samples\"},{\"panel_id\":\"d\",\"text\":\"The bar chart shows the distribution of coercivity (Hc) values for ZnO:Co samples\"},{\"panel_id\":\"e\",\"text\":\"The bar chart shows the distribution of coercivity (Hc) values for ZnO:Fe samples\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Hc (Oe) | Relative frequency (%) |\\n|---------------|-------|\\n| 0-500 | 76% |\\n| 500-1000 | 19% |\\n| 1000-4000 | 5% |\"},{\"panel_id\":\"b\",\"text\":\"| Hc (Oe) | Relative frequency (%) |\\n|---------------|-------|\\n| 0-500 | 70% |\\n| 500-1000 | 23% |\\n| 1000-4000 | 7% |\"},{\"panel_id\":\"c\",\"text\":\"| Hc (Oe) | Relative frequency (%) |\\n|---------------|-------|\\n| 0-500 | 41% |\\n| 500-1000 | 40% |\\n| 1000-4000 | 19% |\"},{\"panel_id\":\"d\",\"text\":\"| Hc (Oe) | Relative frequency (%) |\\n|---------------|-------|\\n| 0-500 | 35% |\\n| 500-1000 | 39% |\\n| 1000-4000 | 26% |\"},{\"panel_id\":\"e\",\"text\":\"| Hc (Oe) | Relative frequency (%) |\\n|---------------|-------|\\n| 0-500 | 33% |\\n| 500-1000 | 36% |\\n| 1000-4000 | 21% |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The fraction of high magnetization values increase in the following order, for Hc > 1000 Oe, \\n1. ZnO/Ni = 19%\\n2. ZnO/Co= 26% \\n3. ZnO/Fe=31%.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is known that the MOKE is proportional to spin−orbit interaction and net spin polarization; hence, it preferentially senses magnetic electrons (i.e., in our case 3d electrons). Therefore, these results unambiguously demonstrate that the observed magnetic behavior of TM-doped ZnO layers stems from the magnetic properties of the dopant; hence, they give evidence that the applied ALD scheme resulted in the formation of a (diluted) magnetic semiconductor\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Magnetization for all TM-doped ZnO layers increases substantially\\u0001the regions with small magnetization decrease to about 33−41% (in dependence on the\\ndopant) compared to more than 70% for the undoped layers. Respectively, the frequencies of medium and large magnetization values increase.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_66_figure_6.jpg","caption":"Figure 6. Statistical distributions of Kerr angle variations for (a) $\\mathrm{ZnO}$ ; (b) oxygen-deficient $\\mathrm{ZnO}$ ; and (c) $\\mathrm{Ni}$ , (d) $\\mathrm{Co}$ , and (e) Fe-doped $\\mathrm{ZnO}$ layers.","id":"train/atomic-layer-deposition/experimental-usecase/66/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/66/figure_6","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"},{"panel_id":"b","label":"bar chart"},{"panel_id":"c","label":"bar chart"},{"panel_id":"d","label":"bar chart"},{"panel_id":"e","label":"bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/Paskaleva et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"66","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:image_caption"},"width":980,"height":956,"image_format":"jpeg","image_sha256":"fa4a768a88fe6ca2a7e695bd112877f16173711b67664a222441340906545663","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":30,"y":0,"width":931,"height":182},{"panel_id":"b","x":29,"y":180,"width":944,"height":186},{"panel_id":"c","x":46,"y":365,"width":921,"height":174},{"panel_id":"d","x":47,"y":543,"width":922,"height":179},{"panel_id":"e","x":44,"y":721,"width":928,"height":230}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart shows the distribution of θ_Kerr values for undoped ZnO\"},{\"panel_id\":\"b\",\"text\":\"The bar chart shows the distribution of θ_Kerr values for oxygen deficient ZnO\"},{\"panel_id\":\"c\",\"text\":\"The bar chart shows the distribution of θ_Kerr values for transition metal doped ZnO:Ni categorized into three ranges: 0<|±θ_Kerr|<100 mdeg, 100<|±θ_Kerr|<1000 mdeg, and |±θ_Kerr|>1000 mdeg.\"},{\"panel_id\":\"d\",\"text\":\"The bar chart shows the distribution of θ_Kerr values for transition metal doped ZnO:Co\"},{\"panel_id\":\"e\",\"text\":\"The bar chart shows the distribution of θ_Kerr values for transition metal doped ZnO:Fe\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| θ_Kerr Range (mdeg) | Relative Frequency (%) |\\n|---|---|\\n| 0–5 | 5.5 |\\n| 5–10 | 5.0 |\\n| 10–15 | 4.5 |\\n| 15–20 | 4.0 |\\n| 20–25 | 3.5 |\\n| 25–30 | 3.0 |\\n| 30–35 | 2.5 |\\n| 35–40 | 2.0 |\\n| 40–45 | 1.5 |\\n| 45–50 | 1.0 |\\n| 50–60 | 0.8 |\\n| 60–70 | 0.4 |\\n| 70–80 | 0.2 |\\n| 80–90 | 0.1 |\\n| 90-100 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| θ_Kerr Range (mdeg) | Relative Frequency (%) |\\n|---|---|\\n| 0–5 | 6.5 |\\n| 5–10 | 6.0 |\\n| 10–15 | 5.5 |\\n| 15–20 | 5.0 |\\n| 20–25 | 4.0 |\\n| 25–30 | 3.5 |\\n| 30–35 | 3.0 |\\n| 35–40 | 2.5 |\\n| 40–45 | 2.0 |\\n| 45–50 | 1.5 |\\n| 50–60 | 1.0 |\\n| 60–70 | 0.5 |\\n| 70–80 | 0.2 |\\n| 80–90 | 0.1 |\\n| 90–100| 0 |\"},{\"panel_id\":\"c\",\"text\":\"| Max Relative frequency (%) | 01000 mdeg |\\n|---|---|---|---|\\n| 15 | 55% | 33% | 12% |\"},{\"panel_id\":\"d\",\"text\":\"| Max Relative frequency (%) | 01000 mdeg |\\n|---|---|---|---|\\n| 10| 25% | 55% | 20% |\"},{\"panel_id\":\"e\",\"text\":\"| Max Relative frequency (%) | 01000 mdeg |\\n|---|---|---|---|\\n| 10 | 45% | 22% | 33% |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All TM-doped layers exhibit very large θKerr values, which are symmetrically distributed with respect to 0. Depending on the dopant, similar trends to those observed for the coercivity appeared from the θKerr distributions. The fraction with\\n| Kerr| > 100 mdeg increases with the dopant in the order Ni, Co, and Fe. The fraction of very large | Kerr| > 1000 mdeg\\nincreases in the same order, that is, 12% for ZnO/Ni; 20% for ZnO/Co, and 33% for ZnO/Fe.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The broadly varied MO Kerr parameters are dependent on localized Fe, Co, and Ni concentration variations, implying randomized inhomogeneous distribution of the dopants in the crystal structure. On the other hand, considering the alternating layer by layer (ZnO TMO) deposition process of the ALD technique, we have to point out the significant MOKEs detected in ZnO-based MO cavity/dielectric (with low optical losses) nano-laminates (Fabry−Perot type). The optical enhancement (several orders of magnitude) of MO Kerr polarization rotation in such structures is related to internal interference effects and the addition of multiple reflections in the nanolayered architecture\\u0001dependent on the layer arrangement, thickness, and the reflective properties of the substrate material\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The undoped ZnO layers (a and b) reveal very weak magenetoptic (MO) activity with the majority of θKerr values less than 20\\nmdeg\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_7.jpg","caption":"Figure 7: Density functional theory model schematics used to calculate metal co-segregation on the B-site with a cation exchange and O vacancy: (a) the co-segregation energy in eV of the deposited metal; (b) the exchange energy comparison of the different deposited transition metals; and (c) DFT calculation representations for the cation exchange and alloy formation [117].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_7","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"},{"panel_id":"b","label":"bar chart"},{"panel_id":"c","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:img_caption"},"width":1336,"height":1058,"image_format":"jpeg","image_sha256":"4cedaa42bed377210333893c2fe3d3c9065990c4f3e2e96838c91697bfe0717f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":6,"y":575,"width":1321,"height":480},{"panel_id":"b","x":670,"y":12,"width":660,"height":531},{"panel_id":"a","x":1,"y":5,"width":645,"height":534}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart represents the Density functional theory model schematics used to calculate metal co-segregation on the B-site with a cation exchange and O vacancy where the co-segregation energy is represented in eV of the deposited metal\"},{\"panel_id\":\"b\",\"text\":\"The bar chart represents the exchange energy comparison of the different deposited transition metals showing two different regions 'Exchangeable region' and 'Non-exchangeable region'.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposited metal | Cosegregation energy (eV) |\\n|---|---|\\n| Ti | -0.12 |\\n| Cr | -1.05 |\\n| Fe | -1.45 |\\n| Mn | -1.89 |\\n| Co | -2.92 |\\n| Ni | -3.32 |\\n| Cu | -4.32 |\"},{\"panel_id\":\"b\",\"text\":\"| Deposited metal | Exchange energy (eV) |\\n|---|---|\\n| Ti | -3.2 |\\n| Cr | -2.27 |\\n| Fe | -1.87 |\\n| Mn | -1.43 |\\n| Co | -0.4 |\\n| Ni | 0 |\\n| Cu | 1.0 |\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies it is thermodynamically unfavorable for Ni to spontaneously exsolve from this specific host oxide on its own. To form Ni nanoparticles, you cannot rely on self-exsolution; you must use an external driving force, such as the ALD-deposited Fe layer shown in figure (a), to provide the chemical potential gradient needed to pull Ni to the surface.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The negative sign indicates that the co-segregation or exchange process is exothermic and spontaneous for all these metals. This suggests that once the metal is deposited and thermal energy is applied, the system will naturally move toward the exchanged state without requiring additional energy input to drive the reaction.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALD-deposited Fe method is superior. Traditional bulk Fe doping would homogeneously alter the composition and, thus, the bulk electronic properties. ALD deposits Fe only on the surface, creating a localized driving force for Ni to exsolve from the immediate sub-surface without changing the bulk's intrinsic properties.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The driving force becomes more favorable (more negative energy) as you move from Ti to Fe, then becomes less favorable after Fe through Cu. Fe is the most favorable. This trend is likely governed by the metal's binding energy or oxidation state stability within the specific host oxide lattice, with Fe achieving the optimal ionic size and charge match to minimize the system's total energy upon exchange.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_9_figure_11.jpg","caption":"Figure 11. Evolution of coverage rates $\\mathrm{HfO_2}$ coverage) and crystallinity with respect to ALD cycles number. The coverage is cumulative. The legend is the same as in Figure 10.","id":"train/atomic-layer-deposition/simulation-usecase/9/figure_11","sample_id":"atomic-layer-deposition/simulation-usecase/9/figure_11","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/A. Dkhissi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:img_caption"},"width":673,"height":503,"image_format":"jpeg","image_sha256":"e2c8fbaa74c04281cd1583063c4ec63d728f8ef945384adf47e2b3cae07821b3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":668,"height":497}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows how surface coverage and crystallinity of HfO₂ change with the number of ALD cycles. Coverage rises quickly in the first three cycles and then levels off near about 73%, showing that the surface becomes saturated early. Crystallinity also increases fast at first, reaching about 60% by the second cycle, and then slowly stabilizes around 62–65%. This means that surface filling happens faster than crystal ordering, which continues more gradually over later cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycle | Coverage (%) | Crystallinity (%) |\\n|-----------|--------------|-------------------|\\n| 1 | ~44 | ~20 |\\n| 2 | ~65 | ~60 |\\n| 3 | ~70 | ~64 |\\n| 4 | ~72 | ~65 |\\n| 5 | ~73 | ~64 |\\n| 6 | ~73 | ~63 |\\n| 7 | ~73 | ~62 |\\n| 8 | ~73 | ~62 |\\n| 9 | ~73 | ~62 |\\n| 10 | ~73 | ~62 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The rapid increase is driven by the high density of available surface hydroxyl sites during the initial ALD cycles, which promotes efficient precursor chemisorption. These reactive sites allow nearly all incoming precursor molecules to participate in self-limiting ligand-exchange reactions, rapidly increasing the surface-occupied fraction. Concurrently, the initial Hf–O–Si interfacial bonding promotes short-range structural ordering, enabling crystallinity to rise quickly once several monolayers have formed. As the surface becomes progressively saturated, the number of unreacted sites decreases, slowing additional growth and leading to the observed plateau.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"-Coverage increases very fast\\n-Crystallinity rises strongly\\n-Many surface sites become occupied\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-It shows self-limiting growth\\n, -It improves thickness control\\n, -It helps achieve uniform films\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cycle 2.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_22_figure_9.jpg","caption":"Figure 9. Etch rate dependence on the phase of $\\mathrm{MoS}_2$ material. Crystalline $\\mathrm{MoS}_2$ etches at a much slower rate compared to amorphous films. Crystalline $\\mathrm{MoS}_2$ films etch at the rate of $\\sim 0.2\\mathrm{\\AA}/$ cycle, while amorphous films were observed to etch at the rate of 0.5 A/cycle.","id":"train/atomic-layer-etching/experimental-usecase/22/figure_9","sample_id":"atomic-layer-etching/experimental-usecase/22/figure_9","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/Thermal Atomic Layer Etching of MoS2 Using MoF6 and H2O.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:img_caption"},"width":427,"height":353,"image_format":"jpeg","image_sha256":"77d0b9e514c5c067223793b080dd7464fb5af6685bdc03e539d47bff9a898a4b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":427,"height":353}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart compares the etch rates of materials in crystalline and amorphous phases. The etch rate for the amorphous phase is significantly higher (0.5 Å/cycle) than that of the crystalline phase (0.2 Å/cycle), indicating that amorphous materials are more susceptible to etching under the same process conditions\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Phase | Etch Rate (Å/cyc) |\\n|---|---|\\n| Crystalline | 0.2 |\\n| Amorphous | 0.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.2 Å/cycle\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Crystalline: 0.2 Å/cycle, Amorphous: 0.5 Å/cycle\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The chart shows that the amorphous phase has a higher etch rate than the crystalline phase, with values of 0.5 Å/cycle and 0.2 Å/cycle, respectively. This suggests that amorphous materials are more readily etched under identical processing conditions. The increased etchability may be due to the disordered atomic structure of amorphous phases, which typically lack the strong, directional bonding present in crystalline materials. This structural difference likely makes them more vulnerable to removal during etching cycles.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_30_fig_2.jpg","caption":"Fig. 2. Results of EPC synergy test at $80\\mathrm{V}$ bias.","id":"train/atomic-layer-etching/experimental-usecase/30/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/30/fig_2","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/Atomic layer etching of GaN and AlGaN.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:image_caption"},"width":600,"height":378,"image_format":"jpeg","image_sha256":"8507e5708ce7cb756a191282482b244543960ddbdff65f09fd791e3a89eb1065","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":1,"width":595,"height":373}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart shows an EPC synergy test at 80 V bias by comparing EPC for a full ALE cycle, chlorination only, and Ar sputter only. EPC is 0.37 nm for ALE, about 0.00 nm for chlorination only, and 0.05 nm for Ar sputter only.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Category | EPC [nm] |\\n|----------|----------|\\n| ALE | 0.37 |\\n| Chlorination only | 0.00 |\\n| Ar sputter only | 0.05 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They represent the measured etch per cycle when running the full ALE cycle, only the chlorination step, or only the Ar ion removal step, respectively.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE EPC is 0.37 nm, which is much larger than either step alone. Chlorination only is negligible, and Ar sputter only is 0.05 nm. This means most of the etch occurs when chlorination and ion bombardment are combined, consistent with a synergistic reactive ion etching mechanism.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 10 to 15% of the ALE EPC.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Chlorination alone does not produce measurable net etching.\\n\\nAr ion bombardment alone removes only a small amount per cycle.\\n\\nThe combination enables efficient removal of the chlorinated surface layer, giving the large EPC seen for ALE.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_33_fig_3.jpg","caption":"FIG. 3. Etching amount of TiN films. The sample temperature during radical exposure were $-10$ or $30^{\\circ}\\text{C}$ , and the radical exposure time was fixed at $300 \\text{s}$ .","id":"train/atomic-layer-etching/experimental-usecase/33/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/33/fig_3","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/Atomic layer etching of titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:image_caption"},"width":667,"height":472,"image_format":"jpeg","image_sha256":"f295b428fbcf6c02d3196ddd9a8db44096166630228f734fb88d8c479d67a62b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":2,"width":660,"height":469}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart compares etching amounts at two different temperatures, showing a significant difference between -10°C and 30°C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature | Etching Amount (nm) |\\n|---|---|\\n|-10 °C | 0.3 nm |\\n| 30 °C | 20 nm |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is likely that the temperature provides the energy to make the created species volatile.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The data represents continuous etching in the case of 20 degrees and possibly ALE for -10 degrees.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is likely that there will even be more etching. The process looks like temperature dependent continuous etching so likely with temperature, the etching will increase.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3 angstroms\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_38_fig5.jpg","caption":"FIG.5. ALE synergy results for both a) AlGaN and (b) GaN.","id":"train/atomic-layer-etching/experimental-usecase/38/fig5","sample_id":"atomic-layer-etching/experimental-usecase/38/fig5","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"},{"panel_id":"b","label":"bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/fig5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/fig5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/High synergy atomic layer etching of AlGaNGaN.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:image_caption"},"width":675,"height":1072,"image_format":"jpeg","image_sha256":"4788da71c879c6fd78d9a5af749be0a8e27da4c642af6c5c0926301ab66b2fdb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":666,"height":530},{"panel_id":"b","x":3,"y":599,"width":667,"height":464}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart shows the etch rate per cycle for the individual half-reactions (Reaction A only and Reaction B only) compared with the full ALE cycle. Reaction A alone produces no measurable etch, Reaction B (AlGaN) alone causes only a small background etch (~0.07 Å/cycle), while the combined ALE process yields ~0.807 Å/cycle, giving a synergy of ~91%.\"},{\"panel_id\":\"b\",\"text\":\"The bar chart shows the etch rate per cycle for the individual half-reactions (Reaction A only and Reaction B only) compared with the full ALE cycle. Reaction A alone produces no measurable etch, Reaction B (GaN) alone causes only a small background etch (~0.07 Å/cycle), while the combined ALE process yields ~2.639 Å/cycle, giving a synergy of ~97%.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Etch rate (Å/cycle): Reaction A (240 cycles) | Etch rate (Å/cycle):ALE (100 Cycles) | Etch rate (Å/cycle):Reaction B (400 cycles) |\\n|---|---|---|\\n| 0.000 | 0.807 | 0.07 |\"},{\"panel_id\":\"b\",\"text\":\"| Etch rate (Å/cycle):Reaction A (240 cycles) | Etch rate (Å/cycle):ALE (72 Cycles) | Etch rate (Å/cycle):Reaction B (400 cycles) |\\n|---|---|---|\\n| 0.000 | 2.639 | 0.07 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Reaction B.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Synergy would decrease. By definition, synergy is calculated by subtracting the sum of the two single-step etch rates from the full ALE rate. Numerically, it would be: (2.639-0.14)/2.639 = 94.6%.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The GaN process is closer to ideal ALE, because its synergy is higher.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_4_fig_3.jpg","caption":"FIG. 3. (a) Synergy test for the chosen ITO ALE parameters. For parameters, see Fig. 1. Synergy parameter, ALE EPC, and the individual reaction EPCs, $\\alpha$ , for Reaction A and $\\beta$ for Reaction B, are displayed in the graph. (b) ALE EPC (crosses) and etch depth (circles) as a function of the number of cycles. The lines are linear fits. The EPC line fit is nearly parallel. (c) Saturation curve for Reaction A. The $\\mathsf{BCl}_3$ exposure time is varied. Other parameters are constant. (d) Saturation curve for Reaction B. The ALE EPC and Ar milling only EPC as a function of the Ar plasma exposure time are shown. Other parameters constant. Error bars in (b)–(d) show standard deviation from the mean, when multiple measurements are done with the same parameters.","id":"train/atomic-layer-etching/experimental-usecase/4/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/4/fig_3","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"line chart"},{"panel_id":"d","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/Atomic layer etching of indium tin oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:img_caption"},"width":1414,"height":936,"image_format":"jpeg","image_sha256":"14a7f4c87cfc768b28879519eb34cdac26286196af1c7e171f0d6192b613ba30","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":14,"y":14,"width":694,"height":455},{"panel_id":"b","x":730,"y":34,"width":679,"height":428},{"panel_id":"c","x":7,"y":508,"width":689,"height":425},{"panel_id":"d","x":722,"y":512,"width":683,"height":421}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A bar chart comparing etch per cycle for different reactions.\"},{\"panel_id\":\"b\",\"text\":\"A multi-axis chart showing EPC and etch depth against the number of cycles.\"},{\"panel_id\":\"c\",\"text\":\"A line chart showing EPC change with BCl3 exposure time.\"},{\"panel_id\":\"d\",\"text\":\"A line chart showing EPC change with Ar plasma exposure time for two conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction | Etch per cycle (Å) |\\n|---|---|\\n| Reaction A | 0.15 |\\n| Reaction A+B | 1.10 |\\n| Reaction B | 0.20 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of cycles | EPC (Å) | Etch depth (Å) |\\n|---|---|---|\\n| 50 | 0.90 | 50 |\\n| 100 | 1.10 | 100 |\\n| 150 | 1.30 | 200 |\\n| 200 | 1.00 | 210 |\"},{\"panel_id\":\"c\",\"text\":\"| BCl3 exposure (s) | EPC (Å) |\\n|---|---|\\n| 0 | 0.10 |\\n| 5 | 0.60 |\\n| 10 | 0.80 |\\n| 15 | 0.90 |\\n| 20 | 1.00 |\"},{\"panel_id\":\"d\",\"text\":\"| Ar plasma exposure (s) | EPC (Å) ALE | EPC (Å) Ar milling only |\\n|---|---|---|\\n| 0 | 0.10 | 0 |\\n| 5 | 0.30 | |\\n| 10 | 0.90 | 0.10 |\\n| 15 | 1.10 | |\\n| 20 | 1.90 | 0.25 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Synergy is a way to numerically represent how much the exposure of the individual precursors to the substrate etch the material compared to the combined use of the precursors. This is represented by the following formula: S = 1 - (α + β)/ALE x 100%, where α and β represent the EPC during exposure of the individual components and ALE the EPC during the dombined use. In this case, S = 1 - 0.2/1.1 = 82%.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The EPC increases slightly over the number of cycles, but the authors consider it \\\"nearly constant\\\", so this process meets the ALE requirements.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 1.2 Å.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 0.6 Å.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_15_fig_10.jpg","caption":"FIG. 10. Distribution of etch products from MD simulations during the first $15\\%$ [panel (a)] and final $85\\%$ [panel (b)] of the $(70\\mathrm{eV})\\mathrm{Ar}^+$ ion bombardment step. The cycle in this case corresponds to $2255\\mathrm{Cl}_2$ molecule impacts and $1000\\mathrm{Ar}^+$ ion impacts. The distributions of products are taken once the cyclic steady state is reached.","id":"train/atomic-layer-etching/simulation-usecase/15/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/15/fig_10","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"},{"panel_id":"b","label":"bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:img_caption"},"width":1367,"height":475,"image_format":"jpeg","image_sha256":"61d8f5317c1b1f7eb276bc27f69c857cfa5dfe222be678063c557bef73db5eeb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":689,"y":31,"width":669,"height":440},{"panel_id":"a","x":6,"y":25,"width":679,"height":445}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The histogram shows that early in the Ar⁺ bombardment, etching is chemically driven, dominated by highly chlorinated species (mainly SiCl₂) from a saturated surface layer, with minimal pure Si. In the later phase, the chlorinated layer is depleted and the process shifts to physical sputtering, evidenced by a sharp increase in pure Si and leaner SiCl products, while a large fraction of atomic Cl indicates significant inefficiency due to sputtered etchant. Early phase: Etching is chemically driven, dominated by highly chlorinated species (mainly SiCl₂) from a chlorine-saturated surface layer, with negligible pure Si.\"},{\"panel_id\":\"b\",\"text\":\"Late phase: The chlorinated layer is depleted, and etching shifts to physical sputtering, marked by increased pure Si and leaner SiCl products, with significant atomic Cl indicating sputtered etchant inefficiency.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Etch product | First 15% of Ar⁺ step (%) |\\n|-------------|---------------------------:|\\n| Si | 3 |\\n| Si2 | 1 |\\n| SiCl | 11 |\\n| SiCl2 | 24 |\\n| SiCl4 | 3 |\\n| Si2Cl | 4 |\\n| Si2Cl2 | 2 |\\n| Cl | 54 |\\n| Cl2 | 2 |\"},{\"panel_id\":\"b\",\"text\":\"| Etch product | Last 85% of Ar⁺ step (%) |\\n|-------------|--------------------------:|\\n| Si | 22 |\\n| Si2 | 2 |\\n| SiCl | 24 |\\n| SiCl2 | 15 |\\n| SiCl4 | 1 |\\n| Si2Cl | 2 |\\n| Si2Cl2 | 2 |\\n| Cl | 36 |\\n| Cl2 | 2 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Because it caused Over-etching. The high 'Si' signal proves the process continued to sputter bulk material after the chemically modified layer was gone, breaking the self-limiting control.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It signals the onset of Physical Sputtering. The ions have finished removing the chemically modified layer and are now damaging/removing the unmodified bulk silicon substrate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It reveals a Gradient. The surface is Chlorine-rich (SiCl₂), but the deeper sub-surface layers are Chlorine-poor, yielding mostly SiCl as the etch progresses downwards.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies Low Efficiency / Wasted Energy. Many ions are simply knocking off the attached Chlorine atoms (reversing the chemical dose) rather than removing the target Silicon atoms.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_15_fig_8.jpg","caption":"FIG. 8. Distribution of etch products from MD simulations during the (70 eV) $\\mathrm{Ar}^+$ ion bombardment step. The cycle in this case corresponds to $2255\\mathrm{Cl}_2$ molecule impacts and $1000\\mathrm{Ar}^+$ ion impacts. The distribution of products is taken once the cyclic steady state is reached.","id":"train/atomic-layer-etching/simulation-usecase/15/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/15/fig_8","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:img_caption"},"width":675,"height":445,"image_format":"jpeg","image_sha256":"959e8acda147ba82acdf359a9ae4ac9b19bdfb48055b8d61a83a7f0d13d45f3b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":12,"width":675,"height":433}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The histogram shows that atomic chlorine (>40%) is the dominant ejected species, indicating significant sputtering of adsorbed chlorine without effective etching. Actual etching occurs via SiCl and SiCl₂ fragments (~35%), while the presence of pure Si (~16%) reveals unintended physical sputtering of the underlying silicon by 70 eV ions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Etch product | Ar⁺ Bombardment step (%) |\\n|-------------|--------------------------:|\\n| Si | ~18 |\\n| Si2 | ~2 |\\n| SiCl | ~22 |\\n| SiCl2 | ~18 |\\n| SiCl4 | ~1 |\\n| Si2Cl | ~2 |\\n| Si2Cl2 | ~1 |\\n| Cl | ~42 |\\n| Cl2 | ~2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It proves Physical Sputtering is occurring. The ions are energetic enough to remove the underlying bulk silicon, effectively breaking the 'self-limiting' rule of ideal ALE.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It represents Low Efficiency / Wasted Energy. Nearly half of the ion impacts are wasted on simply reversing the previous dosing step (knocking off Cl) rather than removing the target material.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies a kinetic/physical mechanism. The ions are violently knocking off incomplete fragments (SiCl) rather than allowing the chemical reaction to proceed fully to the volatile stable state (SiCl₄).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It indicates Substrate Damage. Removing pure silicon means the process is uncontrollably eating into the functional crystal lattice, which would alter the electrical properties of the device.\"}]}]"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_5.jpg","caption":"Figure 5. In situ QMS measurements for (a) $m = 66$ from cyclopentadiene and (b) $m = 48$ from ozone, measured during ITO ALD using $5\\%$ $\\mathrm{SnO_2}$ cycles. The application of the $\\mathrm{SnO_2}$ ALD cycles is indicated.","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_5","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"},{"panel_id":"b","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart shows the increasing intensity of the m=66 signal (C₅H₆) over time during repeated SnO₂ ALD cycles.\"},{\"panel_id\":\"b\",\"text\":\"The bar chart shows the fluctuating m=48 signal (ozone) intensity over time, with signal decay after each pulse.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | m=66 Signal (AU) | m=48 Signal (AU) |\\n|----------|------------------|------------------|\\n| 0 | 0 | 0 |\\n| 100 | 2 | 2 |\\n| 200 | 4 | 3 |\\n| 300 | 6 | 5 |\\n| 400 | 9 | 6 |\\n| 500 | 12 | 7 |\\n| 600 | 15 | 3 |\\n| 700 | 13 | 2 |\\n| 800 | 14 | 1 |\\n| 900 | 15 | 0 |\\n| 1000 | 14 | 0 |\\n| 1100 | 0 | 0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Precursor injection timing , Byproduct removal, Reaction step resolution\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Cyclopentadiene signal increases with each cycle, while ozone shows decaying or pulsed signals that drop off more quickly.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"m=66 (cyclopentadiene), m=48 (ozone)\"}]}]","bbox":[{"panel_id":"a","x":9,"y":0,"width":557,"height":575},{"panel_id":"b","x":591,"y":12,"width":556,"height":565}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:image_caption"},"width":1147,"height":578,"image_format":"jpeg","image_sha256":"b8e96dd1bd0d529443fd4c9718b2718d33718dc42f5d9df400e7bd8fcd81c713","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_66_figure_5.jpg","caption":"Figure 5. Statistical distributions of $H_{c}$ variation for (a) $\\mathrm{ZnO}$ ; (b) oxygen-deficient $\\mathrm{ZnO}$ ; and (c) $\\mathrm{Ni}$ , (d) $\\mathrm{Co}$ , and (e) Fe-doped $\\mathrm{ZnO}$ layers.","id":"train/atomic-layer-deposition/experimental-usecase/66/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/66/figure_5","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"},{"panel_id":"b","label":"bar chart"},{"panel_id":"c","label":"bar chart"},{"panel_id":"d","label":"bar chart"},{"panel_id":"e","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart shows the distribution of coercivity (Hc) values for ZnO samples\"},{\"panel_id\":\"b\",\"text\":\"The bar chart shows the distribution of coercivity (Hc) values for oxygen-deficient ZnO samples\"},{\"panel_id\":\"c\",\"text\":\"The bar chart shows the distribution of coercivity (Hc) values for ZnO:Ni samples\"},{\"panel_id\":\"d\",\"text\":\"The bar chart shows the distribution of coercivity (Hc) values for ZnO:Co samples\"},{\"panel_id\":\"e\",\"text\":\"The bar chart shows the distribution of coercivity (Hc) values for ZnO:Fe samples\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Hc (Oe) | Relative frequency (%) |\\n|---------------|-------|\\n| 0-500 | 76% |\\n| 500-1000 | 19% |\\n| 1000-4000 | 5% |\"},{\"panel_id\":\"b\",\"text\":\"| Hc (Oe) | Relative frequency (%) |\\n|---------------|-------|\\n| 0-500 | 70% |\\n| 500-1000 | 23% |\\n| 1000-4000 | 7% |\"},{\"panel_id\":\"c\",\"text\":\"| Hc (Oe) | Relative frequency (%) |\\n|---------------|-------|\\n| 0-500 | 41% |\\n| 500-1000 | 40% |\\n| 1000-4000 | 19% |\"},{\"panel_id\":\"d\",\"text\":\"| Hc (Oe) | Relative frequency (%) |\\n|---------------|-------|\\n| 0-500 | 35% |\\n| 500-1000 | 39% |\\n| 1000-4000 | 26% |\"},{\"panel_id\":\"e\",\"text\":\"| Hc (Oe) | Relative frequency (%) |\\n|---------------|-------|\\n| 0-500 | 33% |\\n| 500-1000 | 36% |\\n| 1000-4000 | 21% |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The fraction of high magnetization values increase in the following order, for Hc > 1000 Oe, \\n1. ZnO/Ni = 19%\\n2. ZnO/Co= 26% \\n3. ZnO/Fe=31%.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is known that the MOKE is proportional to spin−orbit interaction and net spin polarization; hence, it preferentially senses magnetic electrons (i.e., in our case 3d electrons). Therefore, these results unambiguously demonstrate that the observed magnetic behavior of TM-doped ZnO layers stems from the magnetic properties of the dopant; hence, they give evidence that the applied ALD scheme resulted in the formation of a (diluted) magnetic semiconductor\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Magnetization for all TM-doped ZnO layers increases substantially\\u0001the regions with small magnetization decrease to about 33−41% (in dependence on the\\ndopant) compared to more than 70% for the undoped layers. Respectively, the frequencies of medium and large magnetization values increase.\"}]}]","bbox":[{"panel_id":"a","x":40,"y":0,"width":798,"height":140},{"panel_id":"b","x":40,"y":141,"width":797,"height":144},{"panel_id":"c","x":33,"y":287,"width":800,"height":144},{"panel_id":"d","x":37,"y":430,"width":800,"height":163},{"panel_id":"e","x":40,"y":595,"width":798,"height":213}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/Paskaleva et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"66","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:image_caption"},"width":841,"height":811,"image_format":"jpeg","image_sha256":"ac351459c727715169939cee62a57259cb96e6fb73ea306663b0c6f42bb61da0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_66_figure_6.jpg","caption":"Figure 6. Statistical distributions of Kerr angle variations for (a) $\\mathrm{ZnO}$ ; (b) oxygen-deficient $\\mathrm{ZnO}$ ; and (c) $\\mathrm{Ni}$ , (d) $\\mathrm{Co}$ , and (e) Fe-doped $\\mathrm{ZnO}$ layers.","id":"train/atomic-layer-deposition/experimental-usecase/66/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/66/figure_6","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"},{"panel_id":"b","label":"bar chart"},{"panel_id":"c","label":"bar chart"},{"panel_id":"d","label":"bar chart"},{"panel_id":"e","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart shows the distribution of θ_Kerr values for undoped ZnO\"},{\"panel_id\":\"b\",\"text\":\"The bar chart shows the distribution of θ_Kerr values for oxygen deficient ZnO\"},{\"panel_id\":\"c\",\"text\":\"The bar chart shows the distribution of θ_Kerr values for transition metal doped ZnO:Ni categorized into three ranges: 0<|±θ_Kerr|<100 mdeg, 100<|±θ_Kerr|<1000 mdeg, and |±θ_Kerr|>1000 mdeg.\"},{\"panel_id\":\"d\",\"text\":\"The bar chart shows the distribution of θ_Kerr values for transition metal doped ZnO:Co\"},{\"panel_id\":\"e\",\"text\":\"The bar chart shows the distribution of θ_Kerr values for transition metal doped ZnO:Fe\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| θ_Kerr Range (mdeg) | Relative Frequency (%) |\\n|---|---|\\n| 0–5 | 5.5 |\\n| 5–10 | 5.0 |\\n| 10–15 | 4.5 |\\n| 15–20 | 4.0 |\\n| 20–25 | 3.5 |\\n| 25–30 | 3.0 |\\n| 30–35 | 2.5 |\\n| 35–40 | 2.0 |\\n| 40–45 | 1.5 |\\n| 45–50 | 1.0 |\\n| 50–60 | 0.8 |\\n| 60–70 | 0.4 |\\n| 70–80 | 0.2 |\\n| 80–90 | 0.1 |\\n| 90-100 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| θ_Kerr Range (mdeg) | Relative Frequency (%) |\\n|---|---|\\n| 0–5 | 6.5 |\\n| 5–10 | 6.0 |\\n| 10–15 | 5.5 |\\n| 15–20 | 5.0 |\\n| 20–25 | 4.0 |\\n| 25–30 | 3.5 |\\n| 30–35 | 3.0 |\\n| 35–40 | 2.5 |\\n| 40–45 | 2.0 |\\n| 45–50 | 1.5 |\\n| 50–60 | 1.0 |\\n| 60–70 | 0.5 |\\n| 70–80 | 0.2 |\\n| 80–90 | 0.1 |\\n| 90–100| 0 |\"},{\"panel_id\":\"c\",\"text\":\"| Max Relative frequency (%) | 01000 mdeg |\\n|---|---|---|---|\\n| 15 | 55% | 33% | 12% |\"},{\"panel_id\":\"d\",\"text\":\"| Max Relative frequency (%) | 01000 mdeg |\\n|---|---|---|---|\\n| 10| 25% | 55% | 20% |\"},{\"panel_id\":\"e\",\"text\":\"| Max Relative frequency (%) | 01000 mdeg |\\n|---|---|---|---|\\n| 10 | 45% | 22% | 33% |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All TM-doped layers exhibit very large θKerr values, which are symmetrically distributed with respect to 0. Depending on the dopant, similar trends to those observed for the coercivity appeared from the θKerr distributions. The fraction with\\n| Kerr| > 100 mdeg increases with the dopant in the order Ni, Co, and Fe. The fraction of very large | Kerr| > 1000 mdeg\\nincreases in the same order, that is, 12% for ZnO/Ni; 20% for ZnO/Co, and 33% for ZnO/Fe.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The broadly varied MO Kerr parameters are dependent on localized Fe, Co, and Ni concentration variations, implying randomized inhomogeneous distribution of the dopants in the crystal structure. On the other hand, considering the alternating layer by layer (ZnO TMO) deposition process of the ALD technique, we have to point out the significant MOKEs detected in ZnO-based MO cavity/dielectric (with low optical losses) nano-laminates (Fabry−Perot type). The optical enhancement (several orders of magnitude) of MO Kerr polarization rotation in such structures is related to internal interference effects and the addition of multiple reflections in the nanolayered architecture\\u0001dependent on the layer arrangement, thickness, and the reflective properties of the substrate material\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The undoped ZnO layers (a and b) reveal very weak magenetoptic (MO) activity with the majority of θKerr values less than 20\\nmdeg\"}]}]","bbox":[{"panel_id":"a","x":30,"y":0,"width":931,"height":182},{"panel_id":"b","x":29,"y":180,"width":944,"height":186},{"panel_id":"c","x":46,"y":365,"width":921,"height":174},{"panel_id":"d","x":47,"y":543,"width":922,"height":179},{"panel_id":"e","x":44,"y":721,"width":928,"height":230}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/Paskaleva et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"66","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:image_caption"},"width":980,"height":956,"image_format":"jpeg","image_sha256":"fa4a768a88fe6ca2a7e695bd112877f16173711b67664a222441340906545663","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_7.jpg","caption":"Figure 7: Density functional theory model schematics used to calculate metal co-segregation on the B-site with a cation exchange and O vacancy: (a) the co-segregation energy in eV of the deposited metal; (b) the exchange energy comparison of the different deposited transition metals; and (c) DFT calculation representations for the cation exchange and alloy formation [117].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_7","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"},{"panel_id":"b","label":"bar chart"},{"panel_id":"c","label":"process flow diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart represents the Density functional theory model schematics used to calculate metal co-segregation on the B-site with a cation exchange and O vacancy where the co-segregation energy is represented in eV of the deposited metal\"},{\"panel_id\":\"b\",\"text\":\"The bar chart represents the exchange energy comparison of the different deposited transition metals showing two different regions 'Exchangeable region' and 'Non-exchangeable region'.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposited metal | Cosegregation energy (eV) |\\n|---|---|\\n| Ti | -0.12 |\\n| Cr | -1.05 |\\n| Fe | -1.45 |\\n| Mn | -1.89 |\\n| Co | -2.92 |\\n| Ni | -3.32 |\\n| Cu | -4.32 |\"},{\"panel_id\":\"b\",\"text\":\"| Deposited metal | Exchange energy (eV) |\\n|---|---|\\n| Ti | -3.2 |\\n| Cr | -2.27 |\\n| Fe | -1.87 |\\n| Mn | -1.43 |\\n| Co | -0.4 |\\n| Ni | 0 |\\n| Cu | 1.0 |\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies it is thermodynamically unfavorable for Ni to spontaneously exsolve from this specific host oxide on its own. To form Ni nanoparticles, you cannot rely on self-exsolution; you must use an external driving force, such as the ALD-deposited Fe layer shown in figure (a), to provide the chemical potential gradient needed to pull Ni to the surface.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The negative sign indicates that the co-segregation or exchange process is exothermic and spontaneous for all these metals. This suggests that once the metal is deposited and thermal energy is applied, the system will naturally move toward the exchanged state without requiring additional energy input to drive the reaction.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALD-deposited Fe method is superior. Traditional bulk Fe doping would homogeneously alter the composition and, thus, the bulk electronic properties. ALD deposits Fe only on the surface, creating a localized driving force for Ni to exsolve from the immediate sub-surface without changing the bulk's intrinsic properties.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The driving force becomes more favorable (more negative energy) as you move from Ti to Fe, then becomes less favorable after Fe through Cu. Fe is the most favorable. This trend is likely governed by the metal's binding energy or oxidation state stability within the specific host oxide lattice, with Fe achieving the optimal ionic size and charge match to minimize the system's total energy upon exchange.\"}]}]","bbox":[{"panel_id":"c","x":6,"y":575,"width":1321,"height":480},{"panel_id":"b","x":670,"y":12,"width":660,"height":531},{"panel_id":"a","x":1,"y":5,"width":645,"height":534}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:img_caption"},"width":1336,"height":1058,"image_format":"jpeg","image_sha256":"4cedaa42bed377210333893c2fe3d3c9065990c4f3e2e96838c91697bfe0717f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_9_figure_11.jpg","caption":"Figure 11. Evolution of coverage rates $\\mathrm{HfO_2}$ coverage) and crystallinity with respect to ALD cycles number. The coverage is cumulative. The legend is the same as in Figure 10.","id":"train/atomic-layer-deposition/simulation-usecase/9/figure_11","sample_id":"atomic-layer-deposition/simulation-usecase/9/figure_11","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows how surface coverage and crystallinity of HfO₂ change with the number of ALD cycles. Coverage rises quickly in the first three cycles and then levels off near about 73%, showing that the surface becomes saturated early. Crystallinity also increases fast at first, reaching about 60% by the second cycle, and then slowly stabilizes around 62–65%. This means that surface filling happens faster than crystal ordering, which continues more gradually over later cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycle | Coverage (%) | Crystallinity (%) |\\n|-----------|--------------|-------------------|\\n| 1 | ~44 | ~20 |\\n| 2 | ~65 | ~60 |\\n| 3 | ~70 | ~64 |\\n| 4 | ~72 | ~65 |\\n| 5 | ~73 | ~64 |\\n| 6 | ~73 | ~63 |\\n| 7 | ~73 | ~62 |\\n| 8 | ~73 | ~62 |\\n| 9 | ~73 | ~62 |\\n| 10 | ~73 | ~62 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The rapid increase is driven by the high density of available surface hydroxyl sites during the initial ALD cycles, which promotes efficient precursor chemisorption. These reactive sites allow nearly all incoming precursor molecules to participate in self-limiting ligand-exchange reactions, rapidly increasing the surface-occupied fraction. Concurrently, the initial Hf–O–Si interfacial bonding promotes short-range structural ordering, enabling crystallinity to rise quickly once several monolayers have formed. As the surface becomes progressively saturated, the number of unreacted sites decreases, slowing additional growth and leading to the observed plateau.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"-Coverage increases very fast\\n-Crystallinity rises strongly\\n-Many surface sites become occupied\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-It shows self-limiting growth\\n, -It improves thickness control\\n, -It helps achieve uniform films\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cycle 2.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":668,"height":497}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/A. Dkhissi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:img_caption"},"width":673,"height":503,"image_format":"jpeg","image_sha256":"e2c8fbaa74c04281cd1583063c4ec63d728f8ef945384adf47e2b3cae07821b3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_22_figure_9.jpg","caption":"Figure 9. Etch rate dependence on the phase of $\\mathrm{MoS}_2$ material. Crystalline $\\mathrm{MoS}_2$ etches at a much slower rate compared to amorphous films. Crystalline $\\mathrm{MoS}_2$ films etch at the rate of $\\sim 0.2\\mathrm{\\AA}/$ cycle, while amorphous films were observed to etch at the rate of 0.5 A/cycle.","id":"train/atomic-layer-etching/experimental-usecase/22/figure_9","sample_id":"atomic-layer-etching/experimental-usecase/22/figure_9","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart compares the etch rates of materials in crystalline and amorphous phases. The etch rate for the amorphous phase is significantly higher (0.5 Å/cycle) than that of the crystalline phase (0.2 Å/cycle), indicating that amorphous materials are more susceptible to etching under the same process conditions\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Phase | Etch Rate (Å/cyc) |\\n|---|---|\\n| Crystalline | 0.2 |\\n| Amorphous | 0.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.2 Å/cycle\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Crystalline: 0.2 Å/cycle, Amorphous: 0.5 Å/cycle\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The chart shows that the amorphous phase has a higher etch rate than the crystalline phase, with values of 0.5 Å/cycle and 0.2 Å/cycle, respectively. This suggests that amorphous materials are more readily etched under identical processing conditions. The increased etchability may be due to the disordered atomic structure of amorphous phases, which typically lack the strong, directional bonding present in crystalline materials. This structural difference likely makes them more vulnerable to removal during etching cycles.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":427,"height":353}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/Thermal Atomic Layer Etching of MoS2 Using MoF6 and H2O.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:img_caption"},"width":427,"height":353,"image_format":"jpeg","image_sha256":"77d0b9e514c5c067223793b080dd7464fb5af6685bdc03e539d47bff9a898a4b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_30_fig_2.jpg","caption":"Fig. 2. Results of EPC synergy test at $80\\mathrm{V}$ bias.","id":"train/atomic-layer-etching/experimental-usecase/30/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/30/fig_2","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart shows an EPC synergy test at 80 V bias by comparing EPC for a full ALE cycle, chlorination only, and Ar sputter only. EPC is 0.37 nm for ALE, about 0.00 nm for chlorination only, and 0.05 nm for Ar sputter only.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Category | EPC [nm] |\\n|----------|----------|\\n| ALE | 0.37 |\\n| Chlorination only | 0.00 |\\n| Ar sputter only | 0.05 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They represent the measured etch per cycle when running the full ALE cycle, only the chlorination step, or only the Ar ion removal step, respectively.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE EPC is 0.37 nm, which is much larger than either step alone. Chlorination only is negligible, and Ar sputter only is 0.05 nm. This means most of the etch occurs when chlorination and ion bombardment are combined, consistent with a synergistic reactive ion etching mechanism.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 10 to 15% of the ALE EPC.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Chlorination alone does not produce measurable net etching.\\n\\nAr ion bombardment alone removes only a small amount per cycle.\\n\\nThe combination enables efficient removal of the chlorinated surface layer, giving the large EPC seen for ALE.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":1,"width":595,"height":373}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/Atomic layer etching of GaN and AlGaN.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:image_caption"},"width":600,"height":378,"image_format":"jpeg","image_sha256":"8507e5708ce7cb756a191282482b244543960ddbdff65f09fd791e3a89eb1065","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_33_fig_3.jpg","caption":"FIG. 3. Etching amount of TiN films. The sample temperature during radical exposure were $-10$ or $30^{\\circ}\\text{C}$ , and the radical exposure time was fixed at $300 \\text{s}$ .","id":"train/atomic-layer-etching/experimental-usecase/33/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/33/fig_3","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart compares etching amounts at two different temperatures, showing a significant difference between -10°C and 30°C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature | Etching Amount (nm) |\\n|---|---|\\n|-10 °C | 0.3 nm |\\n| 30 °C | 20 nm |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is likely that the temperature provides the energy to make the created species volatile.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The data represents continuous etching in the case of 20 degrees and possibly ALE for -10 degrees.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is likely that there will even be more etching. The process looks like temperature dependent continuous etching so likely with temperature, the etching will increase.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3 angstroms\"}]}]","bbox":[{"panel_id":"a","x":4,"y":2,"width":660,"height":469}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/Atomic layer etching of titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:image_caption"},"width":667,"height":472,"image_format":"jpeg","image_sha256":"f295b428fbcf6c02d3196ddd9a8db44096166630228f734fb88d8c479d67a62b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_38_fig5.jpg","caption":"FIG.5. ALE synergy results for both a) AlGaN and (b) GaN.","id":"train/atomic-layer-etching/experimental-usecase/38/fig5","sample_id":"atomic-layer-etching/experimental-usecase/38/fig5","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"},{"panel_id":"b","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart shows the etch rate per cycle for the individual half-reactions (Reaction A only and Reaction B only) compared with the full ALE cycle. Reaction A alone produces no measurable etch, Reaction B (AlGaN) alone causes only a small background etch (~0.07 Å/cycle), while the combined ALE process yields ~0.807 Å/cycle, giving a synergy of ~91%.\"},{\"panel_id\":\"b\",\"text\":\"The bar chart shows the etch rate per cycle for the individual half-reactions (Reaction A only and Reaction B only) compared with the full ALE cycle. Reaction A alone produces no measurable etch, Reaction B (GaN) alone causes only a small background etch (~0.07 Å/cycle), while the combined ALE process yields ~2.639 Å/cycle, giving a synergy of ~97%.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Etch rate (Å/cycle): Reaction A (240 cycles) | Etch rate (Å/cycle):ALE (100 Cycles) | Etch rate (Å/cycle):Reaction B (400 cycles) |\\n|---|---|---|\\n| 0.000 | 0.807 | 0.07 |\"},{\"panel_id\":\"b\",\"text\":\"| Etch rate (Å/cycle):Reaction A (240 cycles) | Etch rate (Å/cycle):ALE (72 Cycles) | Etch rate (Å/cycle):Reaction B (400 cycles) |\\n|---|---|---|\\n| 0.000 | 2.639 | 0.07 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Reaction B.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Synergy would decrease. By definition, synergy is calculated by subtracting the sum of the two single-step etch rates from the full ALE rate. Numerically, it would be: (2.639-0.14)/2.639 = 94.6%.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The GaN process is closer to ideal ALE, because its synergy is higher.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":666,"height":530},{"panel_id":"b","x":3,"y":599,"width":667,"height":464}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/fig5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/fig5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/High synergy atomic layer etching of AlGaNGaN.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:image_caption"},"width":675,"height":1072,"image_format":"jpeg","image_sha256":"4788da71c879c6fd78d9a5af749be0a8e27da4c642af6c5c0926301ab66b2fdb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_4_fig_3.jpg","caption":"FIG. 3. (a) Synergy test for the chosen ITO ALE parameters. For parameters, see Fig. 1. Synergy parameter, ALE EPC, and the individual reaction EPCs, $\\alpha$ , for Reaction A and $\\beta$ for Reaction B, are displayed in the graph. (b) ALE EPC (crosses) and etch depth (circles) as a function of the number of cycles. The lines are linear fits. The EPC line fit is nearly parallel. (c) Saturation curve for Reaction A. The $\\mathsf{BCl}_3$ exposure time is varied. Other parameters are constant. (d) Saturation curve for Reaction B. The ALE EPC and Ar milling only EPC as a function of the Ar plasma exposure time are shown. Other parameters constant. Error bars in (b)–(d) show standard deviation from the mean, when multiple measurements are done with the same parameters.","id":"train/atomic-layer-etching/experimental-usecase/4/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/4/fig_3","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"line chart"},{"panel_id":"d","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A bar chart comparing etch per cycle for different reactions.\"},{\"panel_id\":\"b\",\"text\":\"A multi-axis chart showing EPC and etch depth against the number of cycles.\"},{\"panel_id\":\"c\",\"text\":\"A line chart showing EPC change with BCl3 exposure time.\"},{\"panel_id\":\"d\",\"text\":\"A line chart showing EPC change with Ar plasma exposure time for two conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction | Etch per cycle (Å) |\\n|---|---|\\n| Reaction A | 0.15 |\\n| Reaction A+B | 1.10 |\\n| Reaction B | 0.20 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of cycles | EPC (Å) | Etch depth (Å) |\\n|---|---|---|\\n| 50 | 0.90 | 50 |\\n| 100 | 1.10 | 100 |\\n| 150 | 1.30 | 200 |\\n| 200 | 1.00 | 210 |\"},{\"panel_id\":\"c\",\"text\":\"| BCl3 exposure (s) | EPC (Å) |\\n|---|---|\\n| 0 | 0.10 |\\n| 5 | 0.60 |\\n| 10 | 0.80 |\\n| 15 | 0.90 |\\n| 20 | 1.00 |\"},{\"panel_id\":\"d\",\"text\":\"| Ar plasma exposure (s) | EPC (Å) ALE | EPC (Å) Ar milling only |\\n|---|---|---|\\n| 0 | 0.10 | 0 |\\n| 5 | 0.30 | |\\n| 10 | 0.90 | 0.10 |\\n| 15 | 1.10 | |\\n| 20 | 1.90 | 0.25 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Synergy is a way to numerically represent how much the exposure of the individual precursors to the substrate etch the material compared to the combined use of the precursors. This is represented by the following formula: S = 1 - (α + β)/ALE x 100%, where α and β represent the EPC during exposure of the individual components and ALE the EPC during the dombined use. In this case, S = 1 - 0.2/1.1 = 82%.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The EPC increases slightly over the number of cycles, but the authors consider it \\\"nearly constant\\\", so this process meets the ALE requirements.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 1.2 Å.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 0.6 Å.\"}]}]","bbox":[{"panel_id":"a","x":14,"y":14,"width":694,"height":455},{"panel_id":"b","x":730,"y":34,"width":679,"height":428},{"panel_id":"c","x":7,"y":508,"width":689,"height":425},{"panel_id":"d","x":722,"y":512,"width":683,"height":421}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/Atomic layer etching of indium tin oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:img_caption"},"width":1414,"height":936,"image_format":"jpeg","image_sha256":"14a7f4c87cfc768b28879519eb34cdac26286196af1c7e171f0d6192b613ba30","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_15_fig_10.jpg","caption":"FIG. 10. Distribution of etch products from MD simulations during the first $15\\%$ [panel (a)] and final $85\\%$ [panel (b)] of the $(70\\mathrm{eV})\\mathrm{Ar}^+$ ion bombardment step. The cycle in this case corresponds to $2255\\mathrm{Cl}_2$ molecule impacts and $1000\\mathrm{Ar}^+$ ion impacts. The distributions of products are taken once the cyclic steady state is reached.","id":"train/atomic-layer-etching/simulation-usecase/15/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/15/fig_10","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"},{"panel_id":"b","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The histogram shows that early in the Ar⁺ bombardment, etching is chemically driven, dominated by highly chlorinated species (mainly SiCl₂) from a saturated surface layer, with minimal pure Si. In the later phase, the chlorinated layer is depleted and the process shifts to physical sputtering, evidenced by a sharp increase in pure Si and leaner SiCl products, while a large fraction of atomic Cl indicates significant inefficiency due to sputtered etchant. Early phase: Etching is chemically driven, dominated by highly chlorinated species (mainly SiCl₂) from a chlorine-saturated surface layer, with negligible pure Si.\"},{\"panel_id\":\"b\",\"text\":\"Late phase: The chlorinated layer is depleted, and etching shifts to physical sputtering, marked by increased pure Si and leaner SiCl products, with significant atomic Cl indicating sputtered etchant inefficiency.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Etch product | First 15% of Ar⁺ step (%) |\\n|-------------|---------------------------:|\\n| Si | 3 |\\n| Si2 | 1 |\\n| SiCl | 11 |\\n| SiCl2 | 24 |\\n| SiCl4 | 3 |\\n| Si2Cl | 4 |\\n| Si2Cl2 | 2 |\\n| Cl | 54 |\\n| Cl2 | 2 |\"},{\"panel_id\":\"b\",\"text\":\"| Etch product | Last 85% of Ar⁺ step (%) |\\n|-------------|--------------------------:|\\n| Si | 22 |\\n| Si2 | 2 |\\n| SiCl | 24 |\\n| SiCl2 | 15 |\\n| SiCl4 | 1 |\\n| Si2Cl | 2 |\\n| Si2Cl2 | 2 |\\n| Cl | 36 |\\n| Cl2 | 2 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Because it caused Over-etching. The high 'Si' signal proves the process continued to sputter bulk material after the chemically modified layer was gone, breaking the self-limiting control.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It signals the onset of Physical Sputtering. The ions have finished removing the chemically modified layer and are now damaging/removing the unmodified bulk silicon substrate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It reveals a Gradient. The surface is Chlorine-rich (SiCl₂), but the deeper sub-surface layers are Chlorine-poor, yielding mostly SiCl as the etch progresses downwards.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies Low Efficiency / Wasted Energy. Many ions are simply knocking off the attached Chlorine atoms (reversing the chemical dose) rather than removing the target Silicon atoms.\"}]}]","bbox":[{"panel_id":"b","x":689,"y":31,"width":669,"height":440},{"panel_id":"a","x":6,"y":25,"width":679,"height":445}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:img_caption"},"width":1367,"height":475,"image_format":"jpeg","image_sha256":"61d8f5317c1b1f7eb276bc27f69c857cfa5dfe222be678063c557bef73db5eeb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_15_fig_8.jpg","caption":"FIG. 8. Distribution of etch products from MD simulations during the (70 eV) $\\mathrm{Ar}^+$ ion bombardment step. The cycle in this case corresponds to $2255\\mathrm{Cl}_2$ molecule impacts and $1000\\mathrm{Ar}^+$ ion impacts. The distribution of products is taken once the cyclic steady state is reached.","id":"train/atomic-layer-etching/simulation-usecase/15/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/15/fig_8","subset":"bar-chart","split":"train","classification":[{"panel_id":"a","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The histogram shows that atomic chlorine (>40%) is the dominant ejected species, indicating significant sputtering of adsorbed chlorine without effective etching. Actual etching occurs via SiCl and SiCl₂ fragments (~35%), while the presence of pure Si (~16%) reveals unintended physical sputtering of the underlying silicon by 70 eV ions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Etch product | Ar⁺ Bombardment step (%) |\\n|-------------|--------------------------:|\\n| Si | ~18 |\\n| Si2 | ~2 |\\n| SiCl | ~22 |\\n| SiCl2 | ~18 |\\n| SiCl4 | ~1 |\\n| Si2Cl | ~2 |\\n| Si2Cl2 | ~1 |\\n| Cl | ~42 |\\n| Cl2 | ~2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It proves Physical Sputtering is occurring. The ions are energetic enough to remove the underlying bulk silicon, effectively breaking the 'self-limiting' rule of ideal ALE.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It represents Low Efficiency / Wasted Energy. Nearly half of the ion impacts are wasted on simply reversing the previous dosing step (knocking off Cl) rather than removing the target material.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies a kinetic/physical mechanism. The ions are violently knocking off incomplete fragments (SiCl) rather than allowing the chemical reaction to proceed fully to the volatile stable state (SiCl₄).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It indicates Substrate Damage. Removing pure silicon means the process is uncontrollably eating into the functional crystal lattice, which would alter the electrical properties of the device.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":12,"width":675,"height":433}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:img_caption"},"width":675,"height":445,"image_format":"jpeg","image_sha256":"959e8acda147ba82acdf359a9ae4ac9b19bdfb48055b8d61a83a7f0d13d45f3b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/bar-chart/validation/metadata.jsonl b/subsets/bar-chart/validation/metadata.jsonl index cdf39261a60b31df092f1c70cd6e55e3a57aea87..6dab3c1c1dcab07c81163d3097a02ce0448b0ed4 100644 --- a/subsets/bar-chart/validation/metadata.jsonl +++ b/subsets/bar-chart/validation/metadata.jsonl @@ -1,2 +1,2 @@ -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_15_fig_3.jpg","caption":"FIG. 3. Number of ALE publications per year from 1988 to 2014. The first wave of publications occurred in the 1990s. A resurgence of ALE activity is now occurring.","id":"validation/atomic-layer-etching/experimental-usecase/15/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/15/fig_3","subset":"bar-chart","split":"validation","classification":[{"panel_id":"a","label":"bar chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:img_caption"},"width":648,"height":569,"image_format":"jpeg","image_sha256":"5e2792e29a49b6314f82fdef2bbf0a10850174c5574e35603835696ede8998de","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":645,"height":569}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart illustrates the number of ALE reports per year from 1988 to 2014, showing a significant increase during the 'Resurgence' period (approximately after 2006).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Year | Number of ALE Reports Per Year |\\n|---|---|\\n| 1988 | 2 |\\n| 1990 | 4 |\\n| 1992 | 15 |\\n| 1994 | 16 |\\n| 1996 | 8 |\\n| 1998 | 7 |\\n| 2000 | 8 |\\n| 2002 | 8 |\\n| 2004 | 5 |\\n| 2006 | 17 |\\n| 2008 | 22 |\\n| 2010 | 5 |\\n| 2012 | 28 |\\n| 2014 | 55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 1990 and 1998.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The number of ALE reports have been increased from 1988 to 2014, with a slight decrease in 2001.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2014.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Based on the behavior shown in the figure and the additional publications that have been published over the year, it is reasonable to expect an increase in the number of ALE reports after 2014.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_22_fig_3.jpg","caption":"FIG. 3. Number of ALE publications per year from 1988 to 2014. The first wave of publications occurred in the 1990s. A resurgence of ALE activity is now occurring.","id":"validation/atomic-layer-etching/simulation-usecase/22/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/22/fig_3","subset":"bar-chart","split":"validation","classification":[{"panel_id":"a","label":"bar chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/Review Paper -- Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:img_caption"},"width":648,"height":569,"image_format":"jpeg","image_sha256":"5e2792e29a49b6314f82fdef2bbf0a10850174c5574e35603835696ede8998de","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":643,"height":564}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart illustrates the number of ALE reports per year from 1988 to 2014, showing a significant increase during the 'Resurgence' period (between 2006 and 2014).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Year | Number of ALE Reports Per Year |\\n|---|---|\\n| 1988 | 2 |\\n| 1990 | 4 |\\n| 1992 | 15 |\\n| 1994 | 16 |\\n| 1996 | 8 |\\n| 1998 | 7 |\\n| 2000 | 8 |\\n| 2002 | 8 |\\n| 2004 | 5 |\\n| 2006 | 17 |\\n| 2008 | 22 |\\n| 2010 | 5 |\\n| 2012 | 28 |\\n| 2014 | 55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 1990 and 1998.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The number of ALE reports have been increased from 1998 to 2014, with a slight decrease in 2001.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2014.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Based on the behavior shown in the figure and the additional publications that have been published over the year, it is reasonable to expect an increase in the number of ALE reports after 2014.\"}]}]"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_15_fig_3.jpg","caption":"FIG. 3. Number of ALE publications per year from 1988 to 2014. The first wave of publications occurred in the 1990s. A resurgence of ALE activity is now occurring.","id":"validation/atomic-layer-etching/experimental-usecase/15/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/15/fig_3","subset":"bar-chart","split":"validation","classification":[{"panel_id":"a","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart illustrates the number of ALE reports per year from 1988 to 2014, showing a significant increase during the 'Resurgence' period (approximately after 2006).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Year | Number of ALE Reports Per Year |\\n|---|---|\\n| 1988 | 2 |\\n| 1990 | 4 |\\n| 1992 | 15 |\\n| 1994 | 16 |\\n| 1996 | 8 |\\n| 1998 | 7 |\\n| 2000 | 8 |\\n| 2002 | 8 |\\n| 2004 | 5 |\\n| 2006 | 17 |\\n| 2008 | 22 |\\n| 2010 | 5 |\\n| 2012 | 28 |\\n| 2014 | 55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 1990 and 1998.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The number of ALE reports have been increased from 1988 to 2014, with a slight decrease in 2001.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2014.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Based on the behavior shown in the figure and the additional publications that have been published over the year, it is reasonable to expect an increase in the number of ALE reports after 2014.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":645,"height":569}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:img_caption"},"width":648,"height":569,"image_format":"jpeg","image_sha256":"5e2792e29a49b6314f82fdef2bbf0a10850174c5574e35603835696ede8998de","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_22_fig_3.jpg","caption":"FIG. 3. Number of ALE publications per year from 1988 to 2014. The first wave of publications occurred in the 1990s. A resurgence of ALE activity is now occurring.","id":"validation/atomic-layer-etching/simulation-usecase/22/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/22/fig_3","subset":"bar-chart","split":"validation","classification":[{"panel_id":"a","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart illustrates the number of ALE reports per year from 1988 to 2014, showing a significant increase during the 'Resurgence' period (between 2006 and 2014).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Year | Number of ALE Reports Per Year |\\n|---|---|\\n| 1988 | 2 |\\n| 1990 | 4 |\\n| 1992 | 15 |\\n| 1994 | 16 |\\n| 1996 | 8 |\\n| 1998 | 7 |\\n| 2000 | 8 |\\n| 2002 | 8 |\\n| 2004 | 5 |\\n| 2006 | 17 |\\n| 2008 | 22 |\\n| 2010 | 5 |\\n| 2012 | 28 |\\n| 2014 | 55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 1990 and 1998.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The number of ALE reports have been increased from 1998 to 2014, with a slight decrease in 2001.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2014.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Based on the behavior shown in the figure and the additional publications that have been published over the year, it is reasonable to expect an increase in the number of ALE reports after 2014.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":1,"width":643,"height":564}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/Review Paper -- Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:img_caption"},"width":648,"height":569,"image_format":"jpeg","image_sha256":"5e2792e29a49b6314f82fdef2bbf0a10850174c5574e35603835696ede8998de","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/box-plot/test/metadata.jsonl b/subsets/box-plot/test/metadata.jsonl index c08e256f5e4670e72ff75a359ffaf1c6dd04218c..587150c979ed58b35b914132a7170143b68dc64d 100644 --- a/subsets/box-plot/test/metadata.jsonl +++ b/subsets/box-plot/test/metadata.jsonl @@ -1,4 +1,4 @@ -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG4_a.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/47/FIG4_a","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG4_a","subset":"box-plot","split":"test","classification":[{"panel_id":"a","label":"box plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG4_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG4_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"box plot","caption_source":"not_found"},"width":675,"height":575,"image_format":"jpeg","image_sha256":"9b9b64f5f899d85f8a99d620f551e42929dd18301d98c8a3cce103cb104839c9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":5,"width":662,"height":566}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch per cycle EPC (in Å) is plotted against oxygen pulse length (in seconds). As the oxygen pulse length increases, there is a corresponding increase in EPC.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| O₂ pulse length (s) | EPC (Å) |\\n|---|---|\\n| 1 | 0.4 |\\n| 2 | 0.8 |\\n| 3 | 1.2 |\\n| 6 | 1.8 |\\n| 10 | 2.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The pulse is considered to saturate when increasing the pulse length no longer affects the EPC of the process.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The O2 pulse was studied first at 300 °C. The length of the NbCl5 pulse was kept at 4 s and the purge lengths at 1 s. It was found that the O2 pulse does not fully saturate even with 10 s pulse times, but the increase in EPC slows down gradually.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, not O2 pulse.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the interest of optimizing the etch rate per time unit, 3 s was chosen as the O2 pulse length for further experiments.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG4_b.jpg","caption":"FIG. 4. EPC of molybdenum at $300^{\\circ}\\mathrm{C}$ (a) as a function of the $\\mathrm{O}_2$ pulse length when the $\\mathrm{NbCl}_5$ pulse is kept at 4 s and (b) as a function of the $\\mathrm{NbCl}_5$ pulse length when the $\\mathrm{O}_3$ pulse length is kept at 3 s.","id":"test/atomic-layer-etching/experimental-usecase/47/FIG4_b","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG4_b","subset":"box-plot","split":"test","classification":[{"panel_id":"a","label":"box plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG4_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG4_b.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"box plot","caption_source":"content.json:image_caption"},"width":711,"height":581,"image_format":"jpeg","image_sha256":"6416c51e2720bca621e13fcd2813342d5a3e4450a3135c24a897942de0644f70","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":6,"width":687,"height":572}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch per cycle EPC is plotted against the pulse length of NbCl₅. The EPC increases slightly with increasing pulse length.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| NbCl₅ Pulse Length (s) | EPC (Å) | Error Range (Å) |\\n|-------------------------|---------|-----------------|\\n| 0.5 | 0.95 | ±0.15 |\\n| 1.0 | 1.05 | ±0.15 |\\n| 1.5 | 1.10 | ±0.15 |\\n| 2.0 | 1.20 | ±0.15 |\\n| 4.0 | 1.20 | ±0.15 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"NbCl5 pulse length was then varied while keeping the O2 pulse constant.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"the NbCl5 pulse is saturated already at 2 s, and 80% of the saturated EPC is reached within the first 0.2 s.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The fast initial etching followed by gradual saturation is thought to be caused by etching of MoO3 first, followed by slower etching of the lower oxides and generation of the NbCl3/MoCl3 layer.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"4 s NbCl5 pulses were used in the following experiments to ensure complete reaction\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG5_a.jpg","caption":"FIG. 6. Thickness of film etched as a function of the number of ALE cycles at $300^{\\circ}\\mathrm{C}$ using cycles of $4\\mathrm{sNbCl}_5$ and $3\\mathrm{sO}_2$ pulses with 1 s purges.","id":"test/atomic-layer-etching/experimental-usecase/47/FIG5_a","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG5_a","subset":"box-plot","split":"test","classification":[{"panel_id":"a","label":"box plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG5_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG5_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"box plot","caption_source":"content.json:image_caption"},"width":669,"height":578,"image_format":"jpeg","image_sha256":"8af229986b3cba06c62af472a3b30854ba19c8f1c633494062f1336c4098d26b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":662,"height":573}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot relates the temperature with EPC (Å) with error bars indicating variability.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | EPC (Å) |\\n|---|---|\\n| 200 | 0 |\\n| 250 | 0.2 |\\n| 300 | 1.2 |\\n| 350 | 2.6 |\\n| 400 | 3.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The EPC was studied as a function of the etching temperature at 200–400 °C using 4 s NbCl5 pulses and 3 s O2 pulses with 1 s purges.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 200 °C, no etching is observed, but at 250– 400 °C, the EPC is seen to depend almost linearly on the temperature with these pulsing parameters\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The lack of etching at 200 °C may arise from the fact that at this temperature Mo is oxidized to only MoO2 which NbCl5 is not able to etch at this low temperature . While the oxidation of both Mo and MoO2 to MoO3 are thermodynamically favorable at this temperature, there could be a kinetic barrier to the reaction beyond MoO2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG6.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/47/FIG6","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG6","subset":"box-plot","split":"test","classification":[{"panel_id":"a","label":"box plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"box plot","caption_source":"not_found"},"width":678,"height":578,"image_format":"jpeg","image_sha256":"90d4552731535a8648595ed14e44132e844b258a65a647cda9cd34df6fd1265f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":3,"width":665,"height":572}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The images plots the number of ALE cycles and the thicknesses indicating a decreasing trend and etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| no. cycles | Thickness left (nm) |\\n|---|---|\\n| 0 | 52 |\\n| 200 | 41 |\\n| 400 | 25 |\\n| 600 | 12 |\\n| 800 | 2 |\\n| 1000 | 1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~55nm\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Etch depth as a function of the number of ALE cycles shows the etching increases in a linear fashion as the number of cycles and after 800 cycles the film has been completely etched.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Initial thickness = 55nm,\\nThickness after 200 ALE cycles = 41 nm \\nThickness etched away = 55-41 =14 nm\\nEtch rate = 14/200 = 0.07 nm/cycle\"}]}]"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG4_a.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/47/FIG4_a","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG4_a","subset":"box-plot","split":"test","classification":[{"panel_id":"a","label":"box plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch per cycle EPC (in Å) is plotted against oxygen pulse length (in seconds). As the oxygen pulse length increases, there is a corresponding increase in EPC.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| O₂ pulse length (s) | EPC (Å) |\\n|---|---|\\n| 1 | 0.4 |\\n| 2 | 0.8 |\\n| 3 | 1.2 |\\n| 6 | 1.8 |\\n| 10 | 2.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The pulse is considered to saturate when increasing the pulse length no longer affects the EPC of the process.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The O2 pulse was studied first at 300 °C. The length of the NbCl5 pulse was kept at 4 s and the purge lengths at 1 s. It was found that the O2 pulse does not fully saturate even with 10 s pulse times, but the increase in EPC slows down gradually.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, not O2 pulse.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the interest of optimizing the etch rate per time unit, 3 s was chosen as the O2 pulse length for further experiments.\"}]}]","bbox":[{"panel_id":"a","x":8,"y":5,"width":662,"height":566}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG4_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG4_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"box plot","caption_source":"not_found"},"width":675,"height":575,"image_format":"jpeg","image_sha256":"9b9b64f5f899d85f8a99d620f551e42929dd18301d98c8a3cce103cb104839c9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG4_b.jpg","caption":"FIG. 4. EPC of molybdenum at $300^{\\circ}\\mathrm{C}$ (a) as a function of the $\\mathrm{O}_2$ pulse length when the $\\mathrm{NbCl}_5$ pulse is kept at 4 s and (b) as a function of the $\\mathrm{NbCl}_5$ pulse length when the $\\mathrm{O}_3$ pulse length is kept at 3 s.","id":"test/atomic-layer-etching/experimental-usecase/47/FIG4_b","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG4_b","subset":"box-plot","split":"test","classification":[{"panel_id":"a","label":"box plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch per cycle EPC is plotted against the pulse length of NbCl₅. The EPC increases slightly with increasing pulse length.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| NbCl₅ Pulse Length (s) | EPC (Å) | Error Range (Å) |\\n|-------------------------|---------|-----------------|\\n| 0.5 | 0.95 | ±0.15 |\\n| 1.0 | 1.05 | ±0.15 |\\n| 1.5 | 1.10 | ±0.15 |\\n| 2.0 | 1.20 | ±0.15 |\\n| 4.0 | 1.20 | ±0.15 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"NbCl5 pulse length was then varied while keeping the O2 pulse constant.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"the NbCl5 pulse is saturated already at 2 s, and 80% of the saturated EPC is reached within the first 0.2 s.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The fast initial etching followed by gradual saturation is thought to be caused by etching of MoO3 first, followed by slower etching of the lower oxides and generation of the NbCl3/MoCl3 layer.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"4 s NbCl5 pulses were used in the following experiments to ensure complete reaction\"}]}]","bbox":[{"panel_id":"a","x":5,"y":6,"width":687,"height":572}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG4_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG4_b.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"box plot","caption_source":"content.json:image_caption"},"width":711,"height":581,"image_format":"jpeg","image_sha256":"6416c51e2720bca621e13fcd2813342d5a3e4450a3135c24a897942de0644f70","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG5_a.jpg","caption":"FIG. 6. Thickness of film etched as a function of the number of ALE cycles at $300^{\\circ}\\mathrm{C}$ using cycles of $4\\mathrm{sNbCl}_5$ and $3\\mathrm{sO}_2$ pulses with 1 s purges.","id":"test/atomic-layer-etching/experimental-usecase/47/FIG5_a","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG5_a","subset":"box-plot","split":"test","classification":[{"panel_id":"a","label":"box plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot relates the temperature with EPC (Å) with error bars indicating variability.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | EPC (Å) |\\n|---|---|\\n| 200 | 0 |\\n| 250 | 0.2 |\\n| 300 | 1.2 |\\n| 350 | 2.6 |\\n| 400 | 3.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The EPC was studied as a function of the etching temperature at 200–400 °C using 4 s NbCl5 pulses and 3 s O2 pulses with 1 s purges.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 200 °C, no etching is observed, but at 250– 400 °C, the EPC is seen to depend almost linearly on the temperature with these pulsing parameters\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The lack of etching at 200 °C may arise from the fact that at this temperature Mo is oxidized to only MoO2 which NbCl5 is not able to etch at this low temperature . While the oxidation of both Mo and MoO2 to MoO3 are thermodynamically favorable at this temperature, there could be a kinetic barrier to the reaction beyond MoO2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":662,"height":573}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG5_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG5_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"box plot","caption_source":"content.json:image_caption"},"width":669,"height":578,"image_format":"jpeg","image_sha256":"8af229986b3cba06c62af472a3b30854ba19c8f1c633494062f1336c4098d26b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG6.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/47/FIG6","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG6","subset":"box-plot","split":"test","classification":[{"panel_id":"a","label":"box plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The images plots the number of ALE cycles and the thicknesses indicating a decreasing trend and etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| no. cycles | Thickness left (nm) |\\n|---|---|\\n| 0 | 52 |\\n| 200 | 41 |\\n| 400 | 25 |\\n| 600 | 12 |\\n| 800 | 2 |\\n| 1000 | 1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~55nm\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Etch depth as a function of the number of ALE cycles shows the etching increases in a linear fashion as the number of cycles and after 800 cycles the film has been completely etched.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Initial thickness = 55nm,\\nThickness after 200 ALE cycles = 41 nm \\nThickness etched away = 55-41 =14 nm\\nEtch rate = 14/200 = 0.07 nm/cycle\"}]}]","bbox":[{"panel_id":"a","x":5,"y":3,"width":665,"height":572}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"box plot","caption_source":"not_found"},"width":678,"height":578,"image_format":"jpeg","image_sha256":"90d4552731535a8648595ed14e44132e844b258a65a647cda9cd34df6fd1265f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/box-plot/train/metadata.jsonl b/subsets/box-plot/train/metadata.jsonl index d87b90e65b18065267b9a6ec65541e487097d9fe..f8fc1e5cf8f29f99fc76455782fb53fd99b3de34 100644 --- a/subsets/box-plot/train/metadata.jsonl +++ b/subsets/box-plot/train/metadata.jsonl @@ -1,3 +1,3 @@ -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_5.jpg","caption":"Figure 5. Box plots for the precursor vessel temperatures for the prior introduced precursor classes. Boxes contain the average $50\\%$ of the respective dataset while white dots represent the arithmetic mean. The first quartile is the median of the lower half of the dataset. The second quartile represents the median of the respective dataset, and the third quartile is the median of the upper half of the dataset. The whiskers are restricted to a $1.5x$ inter quartile range representing entries outside the box. Outliners are depicted as black dots. If lower or upper whiskers are not displayed an overlap with the respective quartile occurred.","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_5","subset":"box-plot","split":"train","classification":[{"panel_id":"a","label":"box plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"box plot","caption_source":"content.json:image_caption"},"width":667,"height":480,"image_format":"jpeg","image_sha256":"15b14ac81a9e579e000abbac7161f32af3dee582c1edf6775571688382f12387","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":6,"width":659,"height":471}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The box plot compares precursor vessel temperatures for eight rare earth precursor classes used in ALD: R(amd)3, R(amd)(Cp)2, R(or')x, R(Cp)3, R(thd)x, R(famd)3, R(guan)3, and R(tmsa)3. Temperatures range from approximately 80 to 200 °C. White squares indicate arithmetic means, boxes span the interquartile range, and black diamonds mark outliers. R(or')x shows the highest mean temperature near 165 °C, while R(amd)(Cp)2 displays the lowest mean around 131 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| R(amd)\\\\_3 | R(amd)\\\\(Cp\\\\)_2 | R(or')\\\\_x | R(Cp)_3 | R(thd)_x | R(famd)_3 | R(guan)_3 | R(tmsa)_3 |\\n|---|---|---|---|---|---|---|---|\\n| 120 | 130 | 190 | 170 | 150 | 140 | 150 | 140 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The source temperature controls precursor vapor pressure and delivery rate to the reactor. If it is too low, delivery can be unstable and growth becomes mass transport limited. If it is too high, the precursor can decompose or produce parasitic CVD like contributions. Source temperature is therefore a practical indicator of volatility and thermal robustness for a given precursor family.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The alkoxide family, labeled R(or′)x, shows the highest overall range and high typical values compared with the other families.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher volatility at a given operating condition, meaning sufficient vapor pressure can be achieved with less heating.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lower thermal stress on the precursor and delivery hardware\\n\\nReduced risk of precursor decomposition in the source lines\\n\\nImproved process stability and repeatability through easier vapor delivery\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_29_fig_1.jpg","caption":"Fig. 1. Effect of precursor pulse time on $\\mathrm{TiO_2}$ ALD growth rate. The vertical error bars indicate film uniformity across the sample (Selvaraj et al., 2013).","id":"train/atomic-layer-deposition/simulation-usecase/29/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/29/fig_1","subset":"box-plot","split":"train","classification":[{"panel_id":"a","label":"box plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"box plot","caption_source":"content.json:img_caption"},"width":658,"height":378,"image_format":"jpeg","image_sha256":"b563a6fa08a0dfb9e80a8ea043b58d2a87ba0b0e5f530e2fe08d2aeac096bb4f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":657,"height":372}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart plots the experimental growth rate in nanometers per cycle against the precursor pulsing time, illustrating the saturation of the ALD process.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulsing Time (s) | Growth Rate (nm/cycle) |\\n|---|---|\\n| 1 | 0.023 |\\n| 2 | 0.040 |\\n| 4 | 0.040 |\\n| 6 | 0.042 |\\n| 8 | 0.040 |\\n| 14 | 0.042 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After ~ 2s.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The optimal pulse time for the fastest manufacturing would be 2 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Based on the error bars, higher uniformity is achieved at higher pulsing times.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_3.jpg","caption":"Figure 3. (a) Adsorption and reaction energies of the bonding steps of TMPS as illustrated in panel c are given as box plots for both $\\mathrm{a - SiO_2}$ surface slabs. The red line gives the median reaction energy $(\\Delta E)$ together with its mean electronic ( $\\Delta E_{\\mathrm{elec}}$ green) and dispersion ( $\\Delta E_{\\mathrm{disp}}$ blue) contributions. The dashed red line marks the total reaction energy on the $\\alpha$ -quartz model.14 (b) Plot showing the inter-silanol distances of the different surface models (I, vertical lines mark the average $\\mathrm{Si - OH}$ distance of the respective slabs. (c) Reaction schemes illustrating the chemisorption process (I, first row), the first condensation reaction to the SB (II, second row), and the second condensation reaction to the DB bonding configuration (III, third row).","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_3","subset":"box-plot","split":"train","classification":[{"panel_id":"a","label":"box plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"box plot","caption_source":"content.json:img_caption"},"width":1406,"height":653,"image_format":"jpeg","image_sha256":"e5a538e104869543b3fa0305be99fbe9f80bc6436d5296334907a09311e1b52d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":2,"width":878,"height":652},{"panel_id":"b","x":180,"y":11,"width":453,"height":306},{"panel_id":"c","x":943,"y":2,"width":458,"height":646}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_5.jpg","caption":"Figure 5. Box plots for the precursor vessel temperatures for the prior introduced precursor classes. Boxes contain the average $50\\%$ of the respective dataset while white dots represent the arithmetic mean. The first quartile is the median of the lower half of the dataset. The second quartile represents the median of the respective dataset, and the third quartile is the median of the upper half of the dataset. The whiskers are restricted to a $1.5x$ inter quartile range representing entries outside the box. Outliners are depicted as black dots. If lower or upper whiskers are not displayed an overlap with the respective quartile occurred.","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_5","subset":"box-plot","split":"train","classification":[{"panel_id":"a","label":"box plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The box plot compares precursor vessel temperatures for eight rare earth precursor classes used in ALD: R(amd)3, R(amd)(Cp)2, R(or')x, R(Cp)3, R(thd)x, R(famd)3, R(guan)3, and R(tmsa)3. Temperatures range from approximately 80 to 200 °C. White squares indicate arithmetic means, boxes span the interquartile range, and black diamonds mark outliers. R(or')x shows the highest mean temperature near 165 °C, while R(amd)(Cp)2 displays the lowest mean around 131 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| R(amd)\\\\_3 | R(amd)\\\\(Cp\\\\)_2 | R(or')\\\\_x | R(Cp)_3 | R(thd)_x | R(famd)_3 | R(guan)_3 | R(tmsa)_3 |\\n|---|---|---|---|---|---|---|---|\\n| 120 | 130 | 190 | 170 | 150 | 140 | 150 | 140 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The source temperature controls precursor vapor pressure and delivery rate to the reactor. If it is too low, delivery can be unstable and growth becomes mass transport limited. If it is too high, the precursor can decompose or produce parasitic CVD like contributions. Source temperature is therefore a practical indicator of volatility and thermal robustness for a given precursor family.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The alkoxide family, labeled R(or′)x, shows the highest overall range and high typical values compared with the other families.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher volatility at a given operating condition, meaning sufficient vapor pressure can be achieved with less heating.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lower thermal stress on the precursor and delivery hardware\\n\\nReduced risk of precursor decomposition in the source lines\\n\\nImproved process stability and repeatability through easier vapor delivery\"}]}]","bbox":[{"panel_id":"a","x":4,"y":6,"width":659,"height":471}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"box plot","caption_source":"content.json:image_caption"},"width":667,"height":480,"image_format":"jpeg","image_sha256":"15b14ac81a9e579e000abbac7161f32af3dee582c1edf6775571688382f12387","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_29_fig_1.jpg","caption":"Fig. 1. Effect of precursor pulse time on $\\mathrm{TiO_2}$ ALD growth rate. The vertical error bars indicate film uniformity across the sample (Selvaraj et al., 2013).","id":"train/atomic-layer-deposition/simulation-usecase/29/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/29/fig_1","subset":"box-plot","split":"train","classification":[{"panel_id":"a","label":"box plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart plots the experimental growth rate in nanometers per cycle against the precursor pulsing time, illustrating the saturation of the ALD process.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulsing Time (s) | Growth Rate (nm/cycle) |\\n|---|---|\\n| 1 | 0.023 |\\n| 2 | 0.040 |\\n| 4 | 0.040 |\\n| 6 | 0.042 |\\n| 8 | 0.040 |\\n| 14 | 0.042 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After ~ 2s.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The optimal pulse time for the fastest manufacturing would be 2 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Based on the error bars, higher uniformity is achieved at higher pulsing times.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":657,"height":372}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"box plot","caption_source":"content.json:img_caption"},"width":658,"height":378,"image_format":"jpeg","image_sha256":"b563a6fa08a0dfb9e80a8ea043b58d2a87ba0b0e5f530e2fe08d2aeac096bb4f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_3.jpg","caption":"Figure 3. (a) Adsorption and reaction energies of the bonding steps of TMPS as illustrated in panel c are given as box plots for both $\\mathrm{a - SiO_2}$ surface slabs. The red line gives the median reaction energy $(\\Delta E)$ together with its mean electronic ( $\\Delta E_{\\mathrm{elec}}$ green) and dispersion ( $\\Delta E_{\\mathrm{disp}}$ blue) contributions. The dashed red line marks the total reaction energy on the $\\alpha$ -quartz model.14 (b) Plot showing the inter-silanol distances of the different surface models (I, vertical lines mark the average $\\mathrm{Si - OH}$ distance of the respective slabs. (c) Reaction schemes illustrating the chemisorption process (I, first row), the first condensation reaction to the SB (II, second row), and the second condensation reaction to the DB bonding configuration (III, third row).","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_3","subset":"box-plot","split":"train","classification":[{"panel_id":"a","label":"box plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":2,"width":878,"height":652},{"panel_id":"b","x":180,"y":11,"width":453,"height":306},{"panel_id":"c","x":943,"y":2,"width":458,"height":646}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"box plot","caption_source":"content.json:img_caption"},"width":1406,"height":653,"image_format":"jpeg","image_sha256":"e5a538e104869543b3fa0305be99fbe9f80bc6436d5296334907a09311e1b52d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/chromaticity-diagram/train/metadata.jsonl b/subsets/chromaticity-diagram/train/metadata.jsonl index 6a19b43d5ff3abc16d33d7047bb741e4706b7c90..8f4d9cd3747545cb473654107615f9b5d012bffd 100644 --- a/subsets/chromaticity-diagram/train/metadata.jsonl +++ b/subsets/chromaticity-diagram/train/metadata.jsonl @@ -1 +1 @@ -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_13.jpg","caption":"Figure 13. Emission color comparison: ALD/MLD grown (Tb, Eu, Er)-TPA thin film versus three different commercial white light emitting products: LED lamp, fluorescent lamp, and incandescent bulb.[320]","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_13","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_13","subset":"chromaticity-diagram","split":"train","classification":[{"panel_id":"a","label":"chromaticity diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"chromaticity diagram","caption_source":"content.json:image_caption"},"width":658,"height":542,"image_format":"jpeg","image_sha256":"2a0afeee989dc01869130d4f06c79a70859fcdee8703f461e7de838dd218f847","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":655,"height":539}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"CIE 1931 x y chromaticity diagram with a point for an ALD/MLD thin film emission compared against reference lamp chromaticities (LED, fluorescent, incandescent).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample / Light Source | CIE x | CIE y |\\n|---|---|---|\\n| LED lamp (Blue Dot) | 0.40 | 0.39 |\\n| ALD/MLD thin film (Red Dot) | 0.45 | 0.45 |\\n| Incandescent bulb (Green Dot) | 0.48 | 0.42 |\\n| Fluorescent lamp (Black Dot) | 0.50 | 0.46 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They represent chromaticity coordinates in the CIE 1931 x y color space, describing perceived color independent of intensity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is closer to the incandescent bulb point.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The emission color can be shifted by changing the emitting center and its local environment, for example adjusting the rare earth activator identity or concentration, modifying the organic linker or host composition in ALD/MLD, or tuning the film stack that controls excitation and energy transfer. These changes alter the emission spectrum, which moves the x y coordinate.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It benchmarks whether the film emission matches practical lighting color points\\n\\nIt helps judge suitability for display, lighting, or sensing where specific color is required\\n\\nIt provides a compact way to compare color output across materials and processing conditions\"}]}]"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_13.jpg","caption":"Figure 13. Emission color comparison: ALD/MLD grown (Tb, Eu, Er)-TPA thin film versus three different commercial white light emitting products: LED lamp, fluorescent lamp, and incandescent bulb.[320]","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_13","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_13","subset":"chromaticity-diagram","split":"train","classification":[{"panel_id":"a","label":"chromaticity diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"CIE 1931 x y chromaticity diagram with a point for an ALD/MLD thin film emission compared against reference lamp chromaticities (LED, fluorescent, incandescent).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample / Light Source | CIE x | CIE y |\\n|---|---|---|\\n| LED lamp (Blue Dot) | 0.40 | 0.39 |\\n| ALD/MLD thin film (Red Dot) | 0.45 | 0.45 |\\n| Incandescent bulb (Green Dot) | 0.48 | 0.42 |\\n| Fluorescent lamp (Black Dot) | 0.50 | 0.46 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They represent chromaticity coordinates in the CIE 1931 x y color space, describing perceived color independent of intensity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is closer to the incandescent bulb point.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The emission color can be shifted by changing the emitting center and its local environment, for example adjusting the rare earth activator identity or concentration, modifying the organic linker or host composition in ALD/MLD, or tuning the film stack that controls excitation and energy transfer. These changes alter the emission spectrum, which moves the x y coordinate.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It benchmarks whether the film emission matches practical lighting color points\\n\\nIt helps judge suitability for display, lighting, or sensing where specific color is required\\n\\nIt provides a compact way to compare color output across materials and processing conditions\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":655,"height":539}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"chromaticity diagram","caption_source":"content.json:image_caption"},"width":658,"height":542,"image_format":"jpeg","image_sha256":"2a0afeee989dc01869130d4f06c79a70859fcdee8703f461e7de838dd218f847","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/conceptual-diagram/test/metadata.jsonl b/subsets/conceptual-diagram/test/metadata.jsonl index 0845d8bff36d507f773365e7d4be70c11083ebd8..62bb397cd6a872c53c39d3cd8d6aef37d7643634 100644 --- a/subsets/conceptual-diagram/test/metadata.jsonl +++ b/subsets/conceptual-diagram/test/metadata.jsonl @@ -1,27 +1,27 @@ -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_56_figure_5.jpg","caption":"Figure 5. (a) Schematic of the solid state cell fabricated here. The battery constitutes a Li metal anode, a LiPON electrolyte and an LTO cathode. (b) Constant current charge-discharge curve of the solid state battery shown in (a). A capacity of $0.3\\mathrm{Ah} / \\mathrm{cm}^3$ is found at rate of 5C.","id":"test/atomic-layer-deposition/experimental-usecase/56/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/56/figure_5","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/Put et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":683,"height":300,"image_format":"jpeg","image_sha256":"af66e257455a78ec7d5499c0833da4cb069b44ee40e5d62a008d0be9f2f6b270","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":349,"height":295},{"panel_id":"b","x":353,"y":2,"width":327,"height":297}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_14_fig_2.jpg","caption":"Fig. 2. The KMC configuration of the three densification reactions implemented in the KMC simulator. a) Nucleation, b) inter-site, and c) on-site mechanisms.","id":"test/atomic-layer-deposition/simulation-usecase/14/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/14/fig_2","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/14/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/14/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/14/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/14/C. Mastail et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":950,"height":447,"image_format":"jpeg","image_sha256":"b0bffc2efb78db34f3674d2a300c41c271feb03c77603100320e79b06a926bc3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":272,"height":197},{"panel_id":"b","x":321,"y":9,"width":596,"height":176},{"panel_id":"c","x":58,"y":205,"width":646,"height":235}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_34_figure_9.jpg","caption":"Figure 9. Schematic representation of the contact formation. a) For short plasma treatment times, the graphene is likely still present under the contact and a top contact configuration is obtained. b) Longer plasma treatment times likely remove most of the graphene under the metal contact resulting in an edge type contact. The graphene (grey) is contacted to the platinum (red) via functional groups created by the plasma treatment (blue).","id":"test/atomic-layer-deposition/simulation-usecase/34/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/34/figure_9","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":539,"height":517,"image_format":"jpeg","image_sha256":"6a199a896e41f87f82fff7a6421cf38f7d5d3d71efea18e5e99432b9aa99f75a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":44,"y":9,"width":490,"height":271},{"panel_id":"b","x":38,"y":305,"width":498,"height":211}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_40_fig_1.jpg","caption":"Fig. 1. a) 3D scheme of the close-proximity SALD injection head used in this work, represented along with a glass substrate placed underneath the injection head (the typical dimensions of the head are $30\\times 40\\times 50\\mathrm{mm}^3$ b) gas velocity and c) precursor concentration in such an injector, obtained by Comsol Multiphysics simulation in the case of an immobile substrate. The color bar schematically represents values of velocity and precursor concentration, where the hotter color corresponds to higher values. $d_{DEZ},d_{H_2O}$ and $\\mathrm{d}_{\\mathrm{gap}}$ represent the distances between two adjacent exhaust channels next to the precursor outlets, and the distance between the injection head and the substrate surface, respectively.","id":"test/atomic-layer-deposition/simulation-usecase/40/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/40/fig_1","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/Viet Huong Nguyen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":995,"height":444,"image_format":"jpeg","image_sha256":"5ea804635840e486dcb9ef6001bb1aa66e8c862642092058242d0bd2ebe23cf8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":39,"width":391,"height":338},{"panel_id":"b","x":406,"y":3,"width":590,"height":205},{"panel_id":"c","x":413,"y":213,"width":580,"height":231}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Shows a 3D schematic of a close-proximity spatial ALD (SALD) gas injection head positioned above a substrate, illustrating injector geometry and proximity to the surface.\"},{\"panel_id\":\"b\",\"text\":\"Presents COMSOL-simulated gas velocity distribution beneath the injector, highlighting flow confinement, exhaust channels, and alternating N₂, DEZ, and H₂O injection zones.\"},{\"panel_id\":\"c\",\"text\":\"Displays the precursor concentration distribution near the substrate, demonstrating spatial separation of reactants and effective exhaust removal to prevent gas-phase mixing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Gas | Velocity |\\n| --- | --- |\\n| N₂ | High |\\n| DEZ | Medium |\\n| H₂O | Low |\\n| Exhaust | Low |\"},{\"panel_id\":\"c\",\"text\":\"| Gas | Concentration |\\n| --- | --- |\\n| N₂ | Low |\\n| DEZ | High |\\n| H₂O | Low |\\n| Exhaust | Low |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Alternating precursor and N₂ injection channels, Adjacent exhaust channels, Gap distance between injector head and substrate, Channel spacing (d_DEZ, d_H₂O)\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Gas velocity peaks near injection and exhaust channels, while precursor concentration is localized above the substrate and confined between adjacent exhausts.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Precise control of gas velocity and precursor concentration ensures effective spatial separation of reactants, preventing parasitic gas-phase reactions. This enables continuous, high-throughput ALD while maintaining self-limiting surface reactions, uniform film growth, and high deposition selectivity across the substrate.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_40_fig_2.jpg","caption":"","id":"test/atomic-layer-deposition/simulation-usecase/40/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/40/fig_2","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/Viet Huong Nguyen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":1345,"height":595,"image_format":"jpeg","image_sha256":"e8cb425ca1be272231cde6c70bb586c5f38ab7684c85776b91c48e12831fa35e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":43,"width":725,"height":483},{"panel_id":"b","x":743,"y":31,"width":594,"height":515}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This panel presents a conceptual schematic of growth per cycle as a function of precursor exposure in spatial ALD, highlighting three regimes: unsaturated surface reactions at low exposure, an ideal saturation plateau with precursor wastage at moderate exposure, and non-ideal behavior at excessive exposure due to precursor condensation or etching effects.\"},{\"panel_id\":\"b\",\"text\":\"This panel shows experimental ZnO GPC as a function of N₂ bubbling flow through DEZ under fixed SALD conditions, together with a Langmuir adsorption kinetics fit. The data demonstrate rapid GPC increase at low exposure followed by saturation at higher flows, quantitatively validating the surface-limited growth model and identifying an optimal exposure range.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure identifies an optimal precursor exposure range where the surface is fully saturated and growth per cycle reaches its maximum without inducing precursor condensation or wastage. Operating within this regime enables efficient material utilization, predictable thickness control, and high-throughput spatial ALD, while avoiding excess precursor consumption that does not improve film growth or quality.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Degree of surface saturation by DEZ molecules, Langmuir-type adsorption kinetics, Precursor exposure time relative to substrate velocity, Onset of precursor wastage at saturation\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The growth per cycle increases rapidly at low DEZ flow rates and gradually saturates at higher flows.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_47_figure_8.jpg","caption":"Figure 8. Schematic structure of a 1:1 hybrid inorganic-organic thin film fabricated by the ALD/MLD technique. Reproduced with permission.[95] Copyright 2015, American Chemical Society.","id":"test/atomic-layer-deposition/simulation-usecase/47/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/47/figure_8","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/Simon D. Elliott et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":600,"height":556,"image_format":"jpeg","image_sha256":"0603f47cc77ebd62d9bba388eb8e7bae71fbc91e3f0740d0f206f2bc4169fc40","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":600,"height":556}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_47_figure_9.jpg","caption":"Figure 9. Two different adsorption modes: a) physisorption and b) chemisorption of a copper ALD precursor $\\mathrm{Cu(dmap)_2}$ on $\\mathrm{Cu(111)}$ surface. The adsorption energies and structures are dependent on the selection of adsorption site and the method to treat vdW interaction in DFT calculations. Reproduced with permission.[79] Copyright 2015, American Chemical Society.","id":"test/atomic-layer-deposition/simulation-usecase/47/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/47/figure_9","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/Simon D. Elliott et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":652,"height":200,"image_format":"jpeg","image_sha256":"86b8d1dc4219b210173fed1a47ce44c17e71a1034557be450932c4a2b319a5a7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":8,"width":318,"height":192},{"panel_id":"b","x":341,"y":19,"width":311,"height":181}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_1_4a7121f60329bdd898b2e346b834dc50f6fb1985e78d353eeb516499566440df.jpg","caption":"Figre 1. 1 t t layer as volatile by-products.","id":"test/atomic-layer-etching/experimental-usecase/1/4a7121f60329bdd898b2e346b834dc50f6fb1985e78d353eeb516499566440df","sample_id":"atomic-layer-etching/experimental-usecase/1/4a7121f60329bdd898b2e346b834dc50f6fb1985e78d353eeb516499566440df","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/4a7121f60329bdd898b2e346b834dc50f6fb1985e78d353eeb516499566440df.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/4a7121f60329bdd898b2e346b834dc50f6fb1985e78d353eeb516499566440df.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/Atomic Layer Etching An Industry Perspective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1006,"height":523,"image_format":"jpeg","image_sha256":"6b67c373706782b2d40d2993838597b46e066d9349e34267208a9619fe0f5a7e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1006,"height":523}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_1_566b779c2965040fe309d50b309e5840909d6b198b65d7cb4f5ebcf5747a65cc.jpg","caption":"Figre 6. f low energy radicals, ions (c) exposure to a suitable ligand (d) removal of metal-ligand using thermal assistance.","id":"test/atomic-layer-etching/experimental-usecase/1/566b779c2965040fe309d50b309e5840909d6b198b65d7cb4f5ebcf5747a65cc","sample_id":"atomic-layer-etching/experimental-usecase/1/566b779c2965040fe309d50b309e5840909d6b198b65d7cb4f5ebcf5747a65cc","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/566b779c2965040fe309d50b309e5840909d6b198b65d7cb4f5ebcf5747a65cc.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/566b779c2965040fe309d50b309e5840909d6b198b65d7cb4f5ebcf5747a65cc.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/Atomic Layer Etching An Industry Perspective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1014,"height":261,"image_format":"jpeg","image_sha256":"0e7042bc7892e7eb73248741fa8ba276563bc5271d08b07a34506a2845e8469f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1014,"height":261}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_1_figure_7.jpg","caption":"Figure 7. i f t i i an ILD friendly planarization process.","id":"test/atomic-layer-etching/experimental-usecase/1/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/1/figure_7","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/Atomic Layer Etching An Industry Perspective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1014,"height":367,"image_format":"jpeg","image_sha256":"c2f9c15078c2231dd1c3c118f31ac9cae05734530dafd8be01942d26ef8958a6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1014,"height":367}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_18_fig_5.jpg","caption":"FIG. 5. HF molecules reaching open areas directly, establishing flux $\\mathsf{F}_{\\mathsf{o}}$ and a surface concentration $\\sigma_{0}$ . Shaded areas beneath the mask are only fluorinated indirectly at flux $\\mathsf{F}_{\\mathsf{s}}$ by desorbed fluorine originating from the open area. $\\sigma_{\\mathrm{s}}$ , the surface concentration in the shade, will be lower than $\\sigma_{0}$ if reactant dosing is not allowed to reach saturation resulting in a lower EPC beneath the mask. Reprinted with permission from Fischer et al., J. Vac. Sci. Technol., A 38, 042601 (2020). Copyright 2020, American Vacuum Society.","id":"test/atomic-layer-etching/experimental-usecase/18/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/18/fig_5","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":663,"height":464,"image_format":"jpeg","image_sha256":"1251242b8e6b61a2d251cd6084dab0332407a581e0392059031f1e05495615b0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":4,"width":652,"height":458}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_18_fig_6.jpg","caption":"FIG. 6. Classification of ALE by directionality. Because thermal ALE uses nondirectional species both in the modification and removal step, the result is an isotropic etching profile. Data reproduced from Ref. 5.","id":"test/atomic-layer-etching/experimental-usecase/18/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/18/fig_6","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1081,"height":658,"image_format":"jpeg","image_sha256":"8db141a595d45daaa07a5559496449ffd139da87894da5f89b04d7a8b0bdc00f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":1,"width":1063,"height":653}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The diagram illustrates different types of ALE (Atomic Layer Etching) classified based on directionality of modification and removal steps, which can be isotropic or directional.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Removal Step | Modification Step | Modification Type | Removal Type | ALE Classification |\\n|-------------------|-------------------|-----------------------------------|---------------------------| --------------|\\n| Isotropic | Isotropic | Isotropic ALE - Modification | Isotropic ALE - Removal | Isotropic ALE |\\n| Isotropic | Directional | Directional ALE - Modification | Isotropic ALE - Removal | Directional ALE |\\n| Directional | Isotropic | Isotropic ALE - Modification | Directional ALE - Removal | Directional ALE |\\n| Directional | Directional | Directional ALE - Modification | Directional ALE - Removal | Directional ALE |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Classification of thermal ALE processes by material\\n, 2. Classification of modification steps\\n, 3. Classification of removal steps\\n, 4. Classification by the nature of self-limitation\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes. 3 ways\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Thermal isotropic ALE chemistry is characterized by high etch selectivities between materials if the right precursors are chosen, because only thermal energies are involved, . For example, metal oxides such as alumina or hafnia may be etched with selectivities greater than 1000 with respect to other materials used in chip design such as silicon, silicon oxide, or nitride. This ability allows for a residue-less removal of certain materials, even in hard-to-reach places inside high-aspect-ratio structures without any erosion of the surfaces or even sharp corners and edges of these materials\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In comparison to thermal isotropic ALE, directional ALE uses ions to remove the modified layer. This etching process operates very close to the sputtering thresholds of the modified and bulk materials. The ion energy is adjusted to allow sputtering of the modified layer but not the bulk material. In that way, self-limitation of the removal step is achieved. In reality, the sputtering threshold of the two materials may be too close together to achieve perfect self-limitation.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_18_fig_7.jpg","caption":"FIG. 7. Schematic illustration of the formation of horizontal devices using a 3D Vertical integration scheme.","id":"test/atomic-layer-etching/experimental-usecase/18/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/18/fig_7","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":681,"height":355,"image_format":"jpeg","image_sha256":"3516fe811aa9eab8b84e9e567dce23ee621d00b9fd64fc054a754953aa0bf3d3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":674,"height":348}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The series of image illustrate the formation of horizontal devices using a 3D Vertical integration scheme with ALE and ALD processes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Steps | Process |\\n|------|----|\\n|Step 1| RIE|\\n|Step 2| ALE|\\n|Step 3| ALD|\\n|Step 4| ALE|\\n|Step 5| Metal fill|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The stack of alternating dielectric and metal layers is etched using reactive ion etching to form holes. The first panel in the schematic shows the same.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The dielectric materials can, for instance, be SiO2 with TiN being the metal. The TiN layer can be recessed with thermal ALE selectively and with excellent control of the recess depth. The memory material, for instance, TiOx or TaOx, is deposited into the vertical hole and the recessed areas using ALD. The thickness of the ALD layer must be at least twice the thickness of the recessed dielectric film to ensure that the recesses are completely filled.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The resulting memory cell is located at the cross sections of the horizontal TiN plates and the vertical TiN columns. They form so-called memory arrays, which are connected to control circuits next to or under the memory array via metal connections. Other implementations have the memory device at the crossing of metal lines rather than at the intersections of plates and columns.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_35_fig_1.jpg","caption":"FIG. 1. Schematic view of the warm-walled chamber system. The system consists of a processing chamber, equipped with an in situ ellipsometer and of an analysis chamber with an in situ Auger electron spectroscope.","id":"test/atomic-layer-etching/experimental-usecase/35/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/35/fig_1","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/Comparison of BCl3, TiCl4, and SOCl2 chlorinating agents for.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":672,"height":320,"image_format":"jpeg","image_sha256":"00effedec3765fe48f6a89068055a8b04aa1339184e57abadbf2fe510ffeaa8b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":672,"height":320}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a warm-walled dual-chamber system used for atomic layer etching experiments. The left chamber is the processing chamber equipped with an in situ ellipsometer and heater for performing ALE reactions. The center load-lock enables sample transfer without breaking vacuum. The right chamber is an analysis chamber equipped with an in situ Auger electron spectroscope (AES) for chemical characterization immediately after each etch sequence. Turbo pumps, ion pumps, and gate valves maintain controlled vacuum environments throughout the system.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Integrating both in situ ellipsometry and in vacuo AES ensures that film thickness evolution and chemical composition can be monitored immediately after each ALE step without atmospheric exposure. This prevents surface reoxidation, preserves intermediate reaction products, and allows the researchers to precisely correlate surface chemistry with etch-per-cycle behavior. Such real-time, contamination-free measurements are essential for understanding reaction mechanisms and optimizing ALE performance.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the schematic shows that samples are processed in the ALE chamber, moved through a load-lock, and analyzed in an in situ AES chamber without breaking vacuum.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Dedicated load-lock for vacuum-preserved sample transfer, Turbo and ion pumps maintaining stable vacuum, Gate valves isolating each chamber, In situ ellipsometer and AES integrated directly into the system\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The processing chamber performs thermal ALE reactions with in situ ellipsometry monitoring, while the analysis chamber performs chemical characterization using in situ AES.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_12_b01c668bb4cbed53b46e7d3ca622f0663986e1d068c2dfc6f6d9d56e5415f07b.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/12/b01c668bb4cbed53b46e7d3ca622f0663986e1d068c2dfc6f6d9d56e5415f07b","sample_id":"atomic-layer-etching/simulation-usecase/12/b01c668bb4cbed53b46e7d3ca622f0663986e1d068c2dfc6f6d9d56e5415f07b","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/b01c668bb4cbed53b46e7d3ca622f0663986e1d068c2dfc6f6d9d56e5415f07b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/b01c668bb4cbed53b46e7d3ca622f0663986e1d068c2dfc6f6d9d56e5415f07b.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":672,"height":300,"image_format":"jpeg","image_sha256":"792e2fd8aa6289b217fe6ce5021f879d2e4b063a1ebc3b95cf7f2347eabf35cb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":4,"width":666,"height":294}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents a conceptual illustration of one complete isotropic thermal ALE half-cycle on θ-Al₂O₃(001) based on DFT insights. HF adsorption forms a fluorinated Al–F surface layer (left), followed by H₂O exposure that facilitates ligand exchange and desorption of volatile AlF₃ species, restoring an Al₂O₃ surface configuration (right).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The half-cycle begins with spontaneous adsorption of 18 HF molecules onto the clean oxygen-terminated θ-Al₂O₃(001) surface, forming a fully fluorinated Al–F top layer while releasing water as a byproduct. In the second step, exposure to 9 H₂O molecules triggers ligand exchange: water replaces fluorine ligands on surface aluminum, dramatically lowering the desorption energy and allowing the entire AlF₃ monolayer to leave as volatile AlF₃(g). This cleanly regenerates the original hydroxylated alumina surface, completing one atomic-layer-precision, isotropic etch half-cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Al–F bonds formed after HF exposure are extremely strong and thermally stable by themselves, preventing spontaneous desorption of aluminum below ~600–700 °C. Water acts as a ligand that coordinates to surface Al, significantly weakens the Al–surface oxygen bonds, and stabilizes the departing AlF₃ molecule, reducing the desorption barrier to at substantially reduced temperatures compared to thermal desorption. This ligand-promoted etching mechanism is the key property enabling truly thermal, damage-free ALE of alumina at CMOS-compatible temperatures.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"High isotropy and absence of ion-induced damage due to purely neutral, gas-phase chemistry.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_12_figure_6.jpg","caption":"Figure 6. Analysis of the charge density difference in geometry $\\mathrm{M}_{\\mathrm{B}}$ . Here, the combined electronic charge density of the noninteracting systems $\\left[\\rho \\left(\\mathrm{Al}_{2}\\mathrm{O}_{3}\\right)\\right.$ and $\\left.\\rho \\left(\\mathrm{HF}\\right)\\right]$ is subtracted from that of the interacting system $\\left[\\rho \\left(\\mathrm{Al}_{2}\\mathrm{O}_{3} + \\mathrm{HF}\\right)\\right]$ to give the density difference plot at the right. The isosurface value for $\\rho \\left(\\mathrm{Al}_{2}\\mathrm{O}_{3} + \\mathrm{HF}\\right)$ , $\\rho \\left(\\mathrm{Al}_{2}\\mathrm{O}_{3}\\right)$ , and $\\rho \\left(\\mathrm{HF}\\right)$ is $0.1 \\mathrm{e} / \\mathrm{\\AA}^{3}$ . The isosurface value for the difference plot at the right is $0.02 \\mathrm{e} / \\mathrm{\\AA}^{3}$ .","id":"test/atomic-layer-etching/simulation-usecase/12/figure_6","sample_id":"atomic-layer-etching/simulation-usecase/12/figure_6","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1069,"height":344,"image_format":"jpeg","image_sha256":"40204a1d265bb554cec27ef7d95b7ed427046e43d92e74560d01213bf6980fd2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":2,"width":333,"height":333},{"panel_id":"b","x":376,"y":2,"width":326,"height":335},{"panel_id":"c","x":733,"y":2,"width":331,"height":347}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This panel shows the total charge density of the interacting Al₂O₃ + HF system. Electron density is concentrated around surface oxygen and aluminum atoms, as well as around the adsorbed HF fragment. The image represents the final electronic state after interaction, without separating individual contributions.\"},{\"panel_id\":\"b\",\"text\":\"This panel shows the summed charge densities of isolated Al₂O₃ and HF placed in the same geometry but without interaction. The electron density remains localized within the alumina lattice and the intact HF molecule. No charge redistribution or bond formation is visible here.\"},{\"panel_id\":\"c\",\"text\":\"This panel shows the charge-density difference obtained by subtracting the non-interacting densities from the interacting system. Electron accumulation appears near the fluorine atom and along the newly formed surface O–H bond. Electron depletion is visible in the original H–F bond region, indicating HF dissociation and surface-driven charge rearrangement.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The charge-density difference plot shows clear electron redistribution upon HF adsorption, with electron accumulation around the fluorine atom and the surface O–H bond, and electron depletion from the original H–F bond region. This pattern is consistent with dissociative adsorption involving Al–F bond formation and proton transfer to a surface oxygen atom. The redistribution indicates that HF dissociation is electronically driven and stabilized by the surface.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Electron accumulation on the fluorine atom\\n, -Electron accumulation around the newly formed surface O–H bond\\n, -Electron depletion in the original H–F bond region\\n, -Electron depletion near surface oxygen lone-pair regions\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"On the fluorine atom and along the newly formed Al–F bonding region.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_18_fig_1.jpg","caption":"FIG. 1. Schematic model of the thermal ALE process.","id":"test/atomic-layer-etching/simulation-usecase/18/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/18/fig_1","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/Origin of enhanced thermal atomic layer etching of amorphous HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":669,"height":422,"image_format":"jpeg","image_sha256":"e013b73558ad09134f89886a79f7e5047b6cbfd8698e631aa3ad9683493c346e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":8,"width":658,"height":413}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_21_figure_1.jpg","caption":"Figure 1. Comparison of different methods to overcome the surface binding energy, $E_{0}$ , including via (a) chemical bonds that lower $E_{0}$ ; (b) kinetic energy from vibrations; and/or (c) kinetic energy from collisions ( $\\epsilon_{\\mathrm{i}} =$ ion energy).","id":"test/atomic-layer-etching/simulation-usecase/21/figure_1","sample_id":"atomic-layer-etching/simulation-usecase/21/figure_1","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/Review Paper -- Atomic Layer Etching Rethinking the Art of Etch.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":653,"height":414,"image_format":"jpeg","image_sha256":"66c9d91ab35407b511a15979532aa1d31994a886b0f1f6dd302420228489f183","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":35,"y":71,"width":167,"height":333},{"panel_id":"b","x":255,"y":78,"width":184,"height":322},{"panel_id":"c","x":458,"y":84,"width":190,"height":321}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"In figure, incoming reactants chemically modify surface bonds, reducing the effective binding strength in a flux-dependent manner.\"},{\"panel_id\":\"b\",\"text\":\"In figure, thermal vibrations supply kinetic energy that enables atom detachment through an Arrhenius-type process.\"},{\"panel_id\":\"c\",\"text\":\"In figure, anisotropic energetic collisions transfer momentum directly to surface atoms, promoting displacement when the incident particle energy exceeds the local binding threshold.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Incoming reactants interact with surface-bound atoms to form transient chemical intermediates that weaken the original lattice bonds. Rather than relying on direct kinetic impact, this pathway lowers the effective binding energy by altering local coordination and bonding configuration. As reactant flux increases, the likelihood of forming these intermediates rises, making bond cleavage and subsequent removal more probable under otherwise mild energetic conditions. This reflects the chemically assisted, self-limiting character typical of ALE reactions.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The directed trajectory of the incoming energetic particle impacting a single surface atom.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher temperature increases detachment probability because the rate follows Arrhenius-type activation over the binding-energy barrier.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_21_figure_5.jpg","caption":"Figure 5. Top images are schematics showing Si bombarded by (a) reactive ions and (b) inert ions at the same energy, based on computational studies by Humbird, 2004. The lower images show AFM data on Si ALE to compare (c) RIE $\\mathrm{Cl}_2 / \\mathrm{Ar}$ plasma at $50~\\mathrm{eV}$ and (d) ALE (alternating $\\mathrm{Cl}_2$ plasma and Ar ions at $50~\\mathrm{eV}$","id":"test/atomic-layer-etching/simulation-usecase/21/figure_5","sample_id":"atomic-layer-etching/simulation-usecase/21/figure_5","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/Review Paper -- Atomic Layer Etching Rethinking the Art of Etch.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":550,"height":692,"image_format":"jpeg","image_sha256":"66a7697bf05ed37f7f0007f6be5210b49dcc8a9a38e48f0d553e859e6cebbc16","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":45,"y":7,"width":196,"height":350},{"panel_id":"b","x":313,"y":13,"width":196,"height":340},{"panel_id":"c","x":29,"y":392,"width":269,"height":298},{"panel_id":"d","x":296,"y":387,"width":250,"height":302}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The schematic illustrates reactive Cl⁺ ion bombardment at 50 eV, where chemical interaction with Si enhances material removal and promotes surface roughening through combined chemical and physical effects.\"},{\"panel_id\":\"b\",\"text\":\"In contrast, inert Ar⁺ ions at the same energy induce predominantly physical sputtering with minimal chemical assistance, resulting in comparatively uniform surface modification.\"},{\"panel_id\":\"c\",\"text\":\"The AFM image after Si RIE using Cl₂/Ar plasma shows a highly textured surface with an RMS roughness of 2.3 nm.\"},{\"panel_id\":\"d\",\"text\":\"After Si ALE, the AFM image reveals a much smoother surface with an RMS roughness of 0.4 nm, reflecting controlled, layer-by-layer removal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Reactive Cl⁺ ions promote etching by forming transient Si–Cl surface species that weaken the local bonding network and lower the activation barrier for material removal. The ion energy further enhances surface activation by generating shallow subsurface disorder that accelerates reaction-site turnover. This dual contribution of chemical activation and mild sputtering drives nonuniform surface retreat, leading to the roughened morphology depicted in the schematic.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Higher roughness can translate into less uniform nucleation and thickness variations in subsequent layers. It may also increase interfacial defect density or local electric-field hotspots in device stacks. In practice, this can hurt yield and increase variability.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"RMS = 0.4 nm.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Sputtering is purely momentum-driven with no chemical bond activation.\\n-Surface atom removal occurs uniformly, limiting lateral etch-rate variability.\\n -The resulting morphology remains compact and smooth due to the absence of chemically amplified defect formation.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_3861bcc5c373a41a69c8ba165bd7d244d783d2e0c9e4bf86e23d0c9570f54628.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/25/3861bcc5c373a41a69c8ba165bd7d244d783d2e0c9e4bf86e23d0c9570f54628","sample_id":"atomic-layer-etching/simulation-usecase/25/3861bcc5c373a41a69c8ba165bd7d244d783d2e0c9e4bf86e23d0c9570f54628","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/3861bcc5c373a41a69c8ba165bd7d244d783d2e0c9e4bf86e23d0c9570f54628.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/3861bcc5c373a41a69c8ba165bd7d244d783d2e0c9e4bf86e23d0c9570f54628.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":964,"height":372,"image_format":"jpeg","image_sha256":"c878e4e863596dcf163104d88eaa5bc6f50cc25cfe9cf5ae9e3f757966feda65","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":36,"y":25,"width":287,"height":342},{"panel_id":"b","x":355,"y":17,"width":276,"height":345},{"panel_id":"c","x":660,"y":22,"width":276,"height":333}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic illustrating the reactant pulse stage, where fluorine- and hydrogen-containing species approach the Hf/Zr–O surface. Downward arrows indicate adsorption-driven surface interaction prior to any temperature-dependent reaction.\"},{\"panel_id\":\"b\",\"text\":\"Conceptual depiction of a self-limiting surface reaction occurring below the indicated temperature thresholds (<657 K for HfO₂ and <534 K for ZrO₂). Adsorbed species modify the surface without net material removal, consistent with saturation-limited behavior.\"},{\"panel_id\":\"c\",\"text\":\"Schematic of the etch regime activated above the temperature thresholds (>657 K for HfO₂ and >534 K for ZrO₂). Upward arrows indicate desorption of reaction products, corresponding to active material removal from the surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hf/Zr\\n, O\\n, F\\n, H\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first stage is the reactant pulse, where incoming species approach the Hf/Zr–O surface.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Above 657 K.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_9d78597edd0c414a5065483cb2847f22761f74c1aeac4ac61cc7b0f77e965fd0.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/25/9d78597edd0c414a5065483cb2847f22761f74c1aeac4ac61cc7b0f77e965fd0","sample_id":"atomic-layer-etching/simulation-usecase/25/9d78597edd0c414a5065483cb2847f22761f74c1aeac4ac61cc7b0f77e965fd0","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"c","label":"conceptual diagram"},{"panel_id":"d","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/9d78597edd0c414a5065483cb2847f22761f74c1aeac4ac61cc7b0f77e965fd0.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/9d78597edd0c414a5065483cb2847f22761f74c1aeac4ac61cc7b0f77e965fd0.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"c","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":366,"height":425,"image_format":"jpeg","image_sha256":"869c137945d3da78ba2411d0de7fa3c49cb25c4ae8d85365af1ee8a1d723a47c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":6,"y":8,"width":352,"height":205},{"panel_id":"d","x":9,"y":237,"width":351,"height":181}],"summarization":"[{\"panel_id\":\"c\",\"text\":\"Energy profile diagram for \\\"Preferred etching,\\\" showing an activation barrier where both the starting state (SL) and final state (SE) lie below the zero-energy reference line.\"},{\"panel_id\":\"d\",\"text\":\"Energy profile for \\\"Purely etching,\\\" where the start state (SL) is positioned above the zero reference (X > 0) and the end state (SE) lies significantly below zero (Y < 0). The substantial net drop from start to finish suggests a strongly downhill thermodynamic outcome once the initial activation barrier is crossed.\"}]","data_extraction":"[{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The activation energy barrier.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Positive..\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. In the purely etching case, SL starts above the 0 line at level X, whereas in the preferred etching case, SL starts below 0 at level X.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_2.jpg","caption":"Figure 2. Schematic representation of the relationship between continuous spontaneous etch (SE, red) and self-limiting (SL, green) processes. $\\Delta G$ represents the reaction free energy.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_2","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_2","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":342,"height":447,"image_format":"jpeg","image_sha256":"7525b8dc4650dc3609562202d42474d0dc4171679e16aacc4f4e2224eb28a29d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":10,"width":339,"height":436}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic illustrating the thermodynamic relationship between continuous spontaneous etching (SE, red loop) and self-limiting (SL, green path). The SE pathway corresponds to a reaction free energy ΔG = Y that enables continuous formation of volatile etch products. In contrast, the SL pathway stabilizes the surface in a non-volatile state with ΔG = X, separated from SE by an energy barrier of at least (Y − X), which suppresses uncontrolled etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It initiates surface reactions by interacting with the material, enabling either spontaneous etching or formation of a self-limiting surface state.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SL pathway leads to a thermodynamically stable, non-volatile surface configuration that does not spontaneously regenerate etch products. Once this state is reached, the system lacks sufficient driving force to re-enter the SE cycle without overcoming an additional energy barrier. This asymmetry is what enforces self-limitation in atomic layer etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SE pathway (ΔG = Y) corresponds to a thermodynamically favorable route for continuous etching, allowing repeated formation and removal of volatile products. In contrast, the SL pathway (ΔG = X) stabilizes the surface in a non-volatile configuration. Although both processes are energetically downhill, the SL state becomes kinetically trapped due to the intervening energy barrier, preventing sustained etching.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Any variable that effectively lowers the energy barrier between SL and SE—such as increased temperature, enhanced surface activation, or more reactive precursor chemistry—could drive the system toward spontaneous etching. This highlights why tight control of process conditions is critical in ALE.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_3.jpg","caption":"Figure 3. Schematic energy profiles representing (a) preferred self-limiting, (b) purely self-limiting, (c) preferred etching, and (d) purely etching.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_3","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_3","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"},{"panel_id":"d","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":841,"height":434,"image_format":"jpeg","image_sha256":"a34291edc65954a0138dd27aaab6fb15a3aa42e3fb94aba43c523f03965b7d6e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":13,"y":14,"width":382,"height":193},{"panel_id":"b","x":458,"y":13,"width":383,"height":194},{"panel_id":"c","x":12,"y":240,"width":383,"height":194},{"panel_id":"d","x":451,"y":236,"width":390,"height":198}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Energy profile where the self-limiting (SL) state lies at a lower free energy (X) than the spontaneous etch (SE) state (Y), favoring surface stabilization while etching remains possible but unfavorable.\"},{\"panel_id\":\"b\",\"text\":\"Energy landscape in which the SL state is strongly stabilized relative to SE, making spontaneous etching thermodynamically inaccessible.\"},{\"panel_id\":\"c\",\"text\":\"Profile showing the spontaneous etch (SE) state at lower free energy than SL, indicating that etching is thermodynamically favored but not exclusive.\"},{\"panel_id\":\"d\",\"text\":\"Energy profile where SE is significantly more stable than SL, resulting in continuous etching without self-limitation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The purely etching process (d).\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Negative.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the purely self-limiting case (b), the energy difference between the self-limiting state (SL) and the spontaneous etch state (SE) is much larger than in the preferred self-limiting case (a). This larger energy gap in (b) indicates a much stronger thermodynamic preference for the self-limiting state, making spontaneous etching significantly less likely compared to case (a).\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_192bb9ae4326c7da9fddab833eb94589955ea0c86b9af9bb28e5db6af0677449.jpg","caption":"(a)","id":"test/atomic-layer-etching/simulation-usecase/34/192bb9ae4326c7da9fddab833eb94589955ea0c86b9af9bb28e5db6af0677449","sample_id":"atomic-layer-etching/simulation-usecase/34/192bb9ae4326c7da9fddab833eb94589955ea0c86b9af9bb28e5db6af0677449","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/192bb9ae4326c7da9fddab833eb94589955ea0c86b9af9bb28e5db6af0677449.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/192bb9ae4326c7da9fddab833eb94589955ea0c86b9af9bb28e5db6af0677449.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":580,"height":258,"image_format":"jpeg","image_sha256":"cc1f7af6e79ece4857b4f5dc99e35ac57ab2554a330b3e0610e779271ea5357e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":580,"height":258}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_8496c3174603c4d537eeb2bd96046a6ed7c4707e4f0a52088a5876039bf59733.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/34/8496c3174603c4d537eeb2bd96046a6ed7c4707e4f0a52088a5876039bf59733","sample_id":"atomic-layer-etching/simulation-usecase/34/8496c3174603c4d537eeb2bd96046a6ed7c4707e4f0a52088a5876039bf59733","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/8496c3174603c4d537eeb2bd96046a6ed7c4707e4f0a52088a5876039bf59733.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/8496c3174603c4d537eeb2bd96046a6ed7c4707e4f0a52088a5876039bf59733.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":881,"height":367,"image_format":"jpeg","image_sha256":"e2712deb7e5ec23ba8f1297e404435373fa630b8b443843a01b58f49a9500ce9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":881,"height":367}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_1.jpg","caption":"Fig. 1. Illustrations of a (a) FinFET (fin field-effect transistor) and a (b) GAA (gate all-around) transistor. FinFETs are bounded by a thickness of $7\\mathrm{nm}$ as opposed to the nanosheets in GAA transistors, which are able to continue the trend of thickness minimization. However, nanosheet thicknesses are dependent on the oxide film layer, which must be introduced in precise dosages to maintain minimal thickness specifications. (b)","id":"test/atomic-layer-etching/simulation-usecase/34/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_1","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":566,"height":263,"image_format":"jpeg","image_sha256":"2b7c45b533682876713effc6198a967273d0d310aba29ead02b154ba39aeba58","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":566,"height":263}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_2.jpg","caption":"Fig. 2. Conventional (a) and spatial (b) ALD/ALE reactor diagrams illustrating their structural and operational differences. Conventional ALD/ALE reactors contain a stationary wafer substrate that is exposed to the precursor and purge gases in sequential steps. Spatial ALD/ALE reactors feed precursor and purge species continuously in isolated zones while the wafer substrate is driven through each zone at a constant velocity on a conveyor belt. 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(a) Schematic of the solid state cell fabricated here. The battery constitutes a Li metal anode, a LiPON electrolyte and an LTO cathode. (b) Constant current charge-discharge curve of the solid state battery shown in (a). A capacity of $0.3\\mathrm{Ah} / \\mathrm{cm}^3$ is found at rate of 5C.","id":"test/atomic-layer-deposition/experimental-usecase/56/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/56/figure_5","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":2,"width":349,"height":295},{"panel_id":"b","x":353,"y":2,"width":327,"height":297}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/Put et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":683,"height":300,"image_format":"jpeg","image_sha256":"af66e257455a78ec7d5499c0833da4cb069b44ee40e5d62a008d0be9f2f6b270","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_14_fig_2.jpg","caption":"Fig. 2. The KMC configuration of the three densification reactions implemented in the KMC simulator. a) Nucleation, b) inter-site, and c) on-site mechanisms.","id":"test/atomic-layer-deposition/simulation-usecase/14/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/14/fig_2","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":2,"width":272,"height":197},{"panel_id":"b","x":321,"y":9,"width":596,"height":176},{"panel_id":"c","x":58,"y":205,"width":646,"height":235}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/14/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/14/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/14/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/14/C. Mastail et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":950,"height":447,"image_format":"jpeg","image_sha256":"b0bffc2efb78db34f3674d2a300c41c271feb03c77603100320e79b06a926bc3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_34_figure_9.jpg","caption":"Figure 9. Schematic representation of the contact formation. a) For short plasma treatment times, the graphene is likely still present under the contact and a top contact configuration is obtained. b) Longer plasma treatment times likely remove most of the graphene under the metal contact resulting in an edge type contact. The graphene (grey) is contacted to the platinum (red) via functional groups created by the plasma treatment (blue).","id":"test/atomic-layer-deposition/simulation-usecase/34/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/34/figure_9","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":44,"y":9,"width":490,"height":271},{"panel_id":"b","x":38,"y":305,"width":498,"height":211}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/René H. 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Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":539,"height":517,"image_format":"jpeg","image_sha256":"6a199a896e41f87f82fff7a6421cf38f7d5d3d71efea18e5e99432b9aa99f75a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_40_fig_1.jpg","caption":"Fig. 1. a) 3D scheme of the close-proximity SALD injection head used in this work, represented along with a glass substrate placed underneath the injection head (the typical dimensions of the head are $30\\times 40\\times 50\\mathrm{mm}^3$ b) gas velocity and c) precursor concentration in such an injector, obtained by Comsol Multiphysics simulation in the case of an immobile substrate. The color bar schematically represents values of velocity and precursor concentration, where the hotter color corresponds to higher values. $d_{DEZ},d_{H_2O}$ and $\\mathrm{d}_{\\mathrm{gap}}$ represent the distances between two adjacent exhaust channels next to the precursor outlets, and the distance between the injection head and the substrate surface, respectively.","id":"test/atomic-layer-deposition/simulation-usecase/40/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/40/fig_1","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Shows a 3D schematic of a close-proximity spatial ALD (SALD) gas injection head positioned above a substrate, illustrating injector geometry and proximity to the surface.\"},{\"panel_id\":\"b\",\"text\":\"Presents COMSOL-simulated gas velocity distribution beneath the injector, highlighting flow confinement, exhaust channels, and alternating N₂, DEZ, and H₂O injection zones.\"},{\"panel_id\":\"c\",\"text\":\"Displays the precursor concentration distribution near the substrate, demonstrating spatial separation of reactants and effective exhaust removal to prevent gas-phase mixing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Gas | Velocity |\\n| --- | --- |\\n| N₂ | High |\\n| DEZ | Medium |\\n| H₂O | Low |\\n| Exhaust | Low |\"},{\"panel_id\":\"c\",\"text\":\"| Gas | Concentration |\\n| --- | --- |\\n| N₂ | Low |\\n| DEZ | High |\\n| H₂O | Low |\\n| Exhaust | Low |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Alternating precursor and N₂ injection channels, Adjacent exhaust channels, Gap distance between injector head and substrate, Channel spacing (d_DEZ, d_H₂O)\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Gas velocity peaks near injection and exhaust channels, while precursor concentration is localized above the substrate and confined between adjacent exhausts.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Precise control of gas velocity and precursor concentration ensures effective spatial separation of reactants, preventing parasitic gas-phase reactions. This enables continuous, high-throughput ALD while maintaining self-limiting surface reactions, uniform film growth, and high deposition selectivity across the substrate.\"}]}]","bbox":[{"panel_id":"a","x":7,"y":39,"width":391,"height":338},{"panel_id":"b","x":406,"y":3,"width":590,"height":205},{"panel_id":"c","x":413,"y":213,"width":580,"height":231}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/Viet Huong Nguyen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":995,"height":444,"image_format":"jpeg","image_sha256":"5ea804635840e486dcb9ef6001bb1aa66e8c862642092058242d0bd2ebe23cf8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_40_fig_2.jpg","caption":"","id":"test/atomic-layer-deposition/simulation-usecase/40/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/40/fig_2","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This panel presents a conceptual schematic of growth per cycle as a function of precursor exposure in spatial ALD, highlighting three regimes: unsaturated surface reactions at low exposure, an ideal saturation plateau with precursor wastage at moderate exposure, and non-ideal behavior at excessive exposure due to precursor condensation or etching effects.\"},{\"panel_id\":\"b\",\"text\":\"This panel shows experimental ZnO GPC as a function of N₂ bubbling flow through DEZ under fixed SALD conditions, together with a Langmuir adsorption kinetics fit. The data demonstrate rapid GPC increase at low exposure followed by saturation at higher flows, quantitatively validating the surface-limited growth model and identifying an optimal exposure range.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure identifies an optimal precursor exposure range where the surface is fully saturated and growth per cycle reaches its maximum without inducing precursor condensation or wastage. Operating within this regime enables efficient material utilization, predictable thickness control, and high-throughput spatial ALD, while avoiding excess precursor consumption that does not improve film growth or quality.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Degree of surface saturation by DEZ molecules, Langmuir-type adsorption kinetics, Precursor exposure time relative to substrate velocity, Onset of precursor wastage at saturation\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The growth per cycle increases rapidly at low DEZ flow rates and gradually saturates at higher flows.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":43,"width":725,"height":483},{"panel_id":"b","x":743,"y":31,"width":594,"height":515}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/Viet Huong Nguyen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":1345,"height":595,"image_format":"jpeg","image_sha256":"e8cb425ca1be272231cde6c70bb586c5f38ab7684c85776b91c48e12831fa35e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_47_figure_8.jpg","caption":"Figure 8. Schematic structure of a 1:1 hybrid inorganic-organic thin film fabricated by the ALD/MLD technique. Reproduced with permission.[95] Copyright 2015, American Chemical Society.","id":"test/atomic-layer-deposition/simulation-usecase/47/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/47/figure_8","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":600,"height":556}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/Simon D. Elliott et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":600,"height":556,"image_format":"jpeg","image_sha256":"0603f47cc77ebd62d9bba388eb8e7bae71fbc91e3f0740d0f206f2bc4169fc40","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_47_figure_9.jpg","caption":"Figure 9. Two different adsorption modes: a) physisorption and b) chemisorption of a copper ALD precursor $\\mathrm{Cu(dmap)_2}$ on $\\mathrm{Cu(111)}$ surface. The adsorption energies and structures are dependent on the selection of adsorption site and the method to treat vdW interaction in DFT calculations. Reproduced with permission.[79] Copyright 2015, American Chemical Society.","id":"test/atomic-layer-deposition/simulation-usecase/47/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/47/figure_9","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":8,"width":318,"height":192},{"panel_id":"b","x":341,"y":19,"width":311,"height":181}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/Simon D. Elliott et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":652,"height":200,"image_format":"jpeg","image_sha256":"86b8d1dc4219b210173fed1a47ce44c17e71a1034557be450932c4a2b319a5a7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_1_4a7121f60329bdd898b2e346b834dc50f6fb1985e78d353eeb516499566440df.jpg","caption":"Figre 1. 1 t t layer as volatile by-products.","id":"test/atomic-layer-etching/experimental-usecase/1/4a7121f60329bdd898b2e346b834dc50f6fb1985e78d353eeb516499566440df","sample_id":"atomic-layer-etching/experimental-usecase/1/4a7121f60329bdd898b2e346b834dc50f6fb1985e78d353eeb516499566440df","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1006,"height":523}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/4a7121f60329bdd898b2e346b834dc50f6fb1985e78d353eeb516499566440df.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/4a7121f60329bdd898b2e346b834dc50f6fb1985e78d353eeb516499566440df.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/Atomic Layer Etching An Industry Perspective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1006,"height":523,"image_format":"jpeg","image_sha256":"6b67c373706782b2d40d2993838597b46e066d9349e34267208a9619fe0f5a7e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_1_566b779c2965040fe309d50b309e5840909d6b198b65d7cb4f5ebcf5747a65cc.jpg","caption":"Figre 6. f low energy radicals, ions (c) exposure to a suitable ligand (d) removal of metal-ligand using thermal assistance.","id":"test/atomic-layer-etching/experimental-usecase/1/566b779c2965040fe309d50b309e5840909d6b198b65d7cb4f5ebcf5747a65cc","sample_id":"atomic-layer-etching/experimental-usecase/1/566b779c2965040fe309d50b309e5840909d6b198b65d7cb4f5ebcf5747a65cc","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1014,"height":261}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/566b779c2965040fe309d50b309e5840909d6b198b65d7cb4f5ebcf5747a65cc.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/566b779c2965040fe309d50b309e5840909d6b198b65d7cb4f5ebcf5747a65cc.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/Atomic Layer Etching An Industry Perspective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1014,"height":261,"image_format":"jpeg","image_sha256":"0e7042bc7892e7eb73248741fa8ba276563bc5271d08b07a34506a2845e8469f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_1_figure_7.jpg","caption":"Figure 7. i f t i i an ILD friendly planarization process.","id":"test/atomic-layer-etching/experimental-usecase/1/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/1/figure_7","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1014,"height":367}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/Atomic Layer Etching An Industry Perspective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1014,"height":367,"image_format":"jpeg","image_sha256":"c2f9c15078c2231dd1c3c118f31ac9cae05734530dafd8be01942d26ef8958a6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_18_fig_5.jpg","caption":"FIG. 5. HF molecules reaching open areas directly, establishing flux $\\mathsf{F}_{\\mathsf{o}}$ and a surface concentration $\\sigma_{0}$ . Shaded areas beneath the mask are only fluorinated indirectly at flux $\\mathsf{F}_{\\mathsf{s}}$ by desorbed fluorine originating from the open area. $\\sigma_{\\mathrm{s}}$ , the surface concentration in the shade, will be lower than $\\sigma_{0}$ if reactant dosing is not allowed to reach saturation resulting in a lower EPC beneath the mask. Reprinted with permission from Fischer et al., J. Vac. Sci. Technol., A 38, 042601 (2020). Copyright 2020, American Vacuum Society.","id":"test/atomic-layer-etching/experimental-usecase/18/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/18/fig_5","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":4,"width":652,"height":458}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":663,"height":464,"image_format":"jpeg","image_sha256":"1251242b8e6b61a2d251cd6084dab0332407a581e0392059031f1e05495615b0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_18_fig_6.jpg","caption":"FIG. 6. Classification of ALE by directionality. Because thermal ALE uses nondirectional species both in the modification and removal step, the result is an isotropic etching profile. Data reproduced from Ref. 5.","id":"test/atomic-layer-etching/experimental-usecase/18/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/18/fig_6","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The diagram illustrates different types of ALE (Atomic Layer Etching) classified based on directionality of modification and removal steps, which can be isotropic or directional.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Removal Step | Modification Step | Modification Type | Removal Type | ALE Classification |\\n|-------------------|-------------------|-----------------------------------|---------------------------| --------------|\\n| Isotropic | Isotropic | Isotropic ALE - Modification | Isotropic ALE - Removal | Isotropic ALE |\\n| Isotropic | Directional | Directional ALE - Modification | Isotropic ALE - Removal | Directional ALE |\\n| Directional | Isotropic | Isotropic ALE - Modification | Directional ALE - Removal | Directional ALE |\\n| Directional | Directional | Directional ALE - Modification | Directional ALE - Removal | Directional ALE |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Classification of thermal ALE processes by material\\n, 2. Classification of modification steps\\n, 3. Classification of removal steps\\n, 4. Classification by the nature of self-limitation\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes. 3 ways\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Thermal isotropic ALE chemistry is characterized by high etch selectivities between materials if the right precursors are chosen, because only thermal energies are involved, . For example, metal oxides such as alumina or hafnia may be etched with selectivities greater than 1000 with respect to other materials used in chip design such as silicon, silicon oxide, or nitride. This ability allows for a residue-less removal of certain materials, even in hard-to-reach places inside high-aspect-ratio structures without any erosion of the surfaces or even sharp corners and edges of these materials\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In comparison to thermal isotropic ALE, directional ALE uses ions to remove the modified layer. This etching process operates very close to the sputtering thresholds of the modified and bulk materials. The ion energy is adjusted to allow sputtering of the modified layer but not the bulk material. In that way, self-limitation of the removal step is achieved. In reality, the sputtering threshold of the two materials may be too close together to achieve perfect self-limitation.\"}]}]","bbox":[{"panel_id":"a","x":7,"y":1,"width":1063,"height":653}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1081,"height":658,"image_format":"jpeg","image_sha256":"8db141a595d45daaa07a5559496449ffd139da87894da5f89b04d7a8b0bdc00f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_18_fig_7.jpg","caption":"FIG. 7. Schematic illustration of the formation of horizontal devices using a 3D Vertical integration scheme.","id":"test/atomic-layer-etching/experimental-usecase/18/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/18/fig_7","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The series of image illustrate the formation of horizontal devices using a 3D Vertical integration scheme with ALE and ALD processes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Steps | Process |\\n|------|----|\\n|Step 1| RIE|\\n|Step 2| ALE|\\n|Step 3| ALD|\\n|Step 4| ALE|\\n|Step 5| Metal fill|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The stack of alternating dielectric and metal layers is etched using reactive ion etching to form holes. The first panel in the schematic shows the same.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The dielectric materials can, for instance, be SiO2 with TiN being the metal. The TiN layer can be recessed with thermal ALE selectively and with excellent control of the recess depth. The memory material, for instance, TiOx or TaOx, is deposited into the vertical hole and the recessed areas using ALD. The thickness of the ALD layer must be at least twice the thickness of the recessed dielectric film to ensure that the recesses are completely filled.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The resulting memory cell is located at the cross sections of the horizontal TiN plates and the vertical TiN columns. They form so-called memory arrays, which are connected to control circuits next to or under the memory array via metal connections. Other implementations have the memory device at the crossing of metal lines rather than at the intersections of plates and columns.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":674,"height":348}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":681,"height":355,"image_format":"jpeg","image_sha256":"3516fe811aa9eab8b84e9e567dce23ee621d00b9fd64fc054a754953aa0bf3d3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_35_fig_1.jpg","caption":"FIG. 1. Schematic view of the warm-walled chamber system. The system consists of a processing chamber, equipped with an in situ ellipsometer and of an analysis chamber with an in situ Auger electron spectroscope.","id":"test/atomic-layer-etching/experimental-usecase/35/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/35/fig_1","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a warm-walled dual-chamber system used for atomic layer etching experiments. The left chamber is the processing chamber equipped with an in situ ellipsometer and heater for performing ALE reactions. The center load-lock enables sample transfer without breaking vacuum. The right chamber is an analysis chamber equipped with an in situ Auger electron spectroscope (AES) for chemical characterization immediately after each etch sequence. Turbo pumps, ion pumps, and gate valves maintain controlled vacuum environments throughout the system.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Integrating both in situ ellipsometry and in vacuo AES ensures that film thickness evolution and chemical composition can be monitored immediately after each ALE step without atmospheric exposure. This prevents surface reoxidation, preserves intermediate reaction products, and allows the researchers to precisely correlate surface chemistry with etch-per-cycle behavior. Such real-time, contamination-free measurements are essential for understanding reaction mechanisms and optimizing ALE performance.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the schematic shows that samples are processed in the ALE chamber, moved through a load-lock, and analyzed in an in situ AES chamber without breaking vacuum.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Dedicated load-lock for vacuum-preserved sample transfer, Turbo and ion pumps maintaining stable vacuum, Gate valves isolating each chamber, In situ ellipsometer and AES integrated directly into the system\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The processing chamber performs thermal ALE reactions with in situ ellipsometry monitoring, while the analysis chamber performs chemical characterization using in situ AES.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":672,"height":320}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/Comparison of BCl3, TiCl4, and SOCl2 chlorinating agents for.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":672,"height":320,"image_format":"jpeg","image_sha256":"00effedec3765fe48f6a89068055a8b04aa1339184e57abadbf2fe510ffeaa8b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_12_b01c668bb4cbed53b46e7d3ca622f0663986e1d068c2dfc6f6d9d56e5415f07b.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/12/b01c668bb4cbed53b46e7d3ca622f0663986e1d068c2dfc6f6d9d56e5415f07b","sample_id":"atomic-layer-etching/simulation-usecase/12/b01c668bb4cbed53b46e7d3ca622f0663986e1d068c2dfc6f6d9d56e5415f07b","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents a conceptual illustration of one complete isotropic thermal ALE half-cycle on θ-Al₂O₃(001) based on DFT insights. HF adsorption forms a fluorinated Al–F surface layer (left), followed by H₂O exposure that facilitates ligand exchange and desorption of volatile AlF₃ species, restoring an Al₂O₃ surface configuration (right).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The half-cycle begins with spontaneous adsorption of 18 HF molecules onto the clean oxygen-terminated θ-Al₂O₃(001) surface, forming a fully fluorinated Al–F top layer while releasing water as a byproduct. In the second step, exposure to 9 H₂O molecules triggers ligand exchange: water replaces fluorine ligands on surface aluminum, dramatically lowering the desorption energy and allowing the entire AlF₃ monolayer to leave as volatile AlF₃(g). This cleanly regenerates the original hydroxylated alumina surface, completing one atomic-layer-precision, isotropic etch half-cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Al–F bonds formed after HF exposure are extremely strong and thermally stable by themselves, preventing spontaneous desorption of aluminum below ~600–700 °C. Water acts as a ligand that coordinates to surface Al, significantly weakens the Al–surface oxygen bonds, and stabilizes the departing AlF₃ molecule, reducing the desorption barrier to at substantially reduced temperatures compared to thermal desorption. This ligand-promoted etching mechanism is the key property enabling truly thermal, damage-free ALE of alumina at CMOS-compatible temperatures.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"High isotropy and absence of ion-induced damage due to purely neutral, gas-phase chemistry.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":4,"y":4,"width":666,"height":294}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/b01c668bb4cbed53b46e7d3ca622f0663986e1d068c2dfc6f6d9d56e5415f07b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/b01c668bb4cbed53b46e7d3ca622f0663986e1d068c2dfc6f6d9d56e5415f07b.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":672,"height":300,"image_format":"jpeg","image_sha256":"792e2fd8aa6289b217fe6ce5021f879d2e4b063a1ebc3b95cf7f2347eabf35cb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_12_figure_6.jpg","caption":"Figure 6. Analysis of the charge density difference in geometry $\\mathrm{M}_{\\mathrm{B}}$ . Here, the combined electronic charge density of the noninteracting systems $\\left[\\rho \\left(\\mathrm{Al}_{2}\\mathrm{O}_{3}\\right)\\right.$ and $\\left.\\rho \\left(\\mathrm{HF}\\right)\\right]$ is subtracted from that of the interacting system $\\left[\\rho \\left(\\mathrm{Al}_{2}\\mathrm{O}_{3} + \\mathrm{HF}\\right)\\right]$ to give the density difference plot at the right. The isosurface value for $\\rho \\left(\\mathrm{Al}_{2}\\mathrm{O}_{3} + \\mathrm{HF}\\right)$ , $\\rho \\left(\\mathrm{Al}_{2}\\mathrm{O}_{3}\\right)$ , and $\\rho \\left(\\mathrm{HF}\\right)$ is $0.1 \\mathrm{e} / \\mathrm{\\AA}^{3}$ . The isosurface value for the difference plot at the right is $0.02 \\mathrm{e} / \\mathrm{\\AA}^{3}$ .","id":"test/atomic-layer-etching/simulation-usecase/12/figure_6","sample_id":"atomic-layer-etching/simulation-usecase/12/figure_6","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This panel shows the total charge density of the interacting Al₂O₃ + HF system. Electron density is concentrated around surface oxygen and aluminum atoms, as well as around the adsorbed HF fragment. The image represents the final electronic state after interaction, without separating individual contributions.\"},{\"panel_id\":\"b\",\"text\":\"This panel shows the summed charge densities of isolated Al₂O₃ and HF placed in the same geometry but without interaction. The electron density remains localized within the alumina lattice and the intact HF molecule. No charge redistribution or bond formation is visible here.\"},{\"panel_id\":\"c\",\"text\":\"This panel shows the charge-density difference obtained by subtracting the non-interacting densities from the interacting system. Electron accumulation appears near the fluorine atom and along the newly formed surface O–H bond. Electron depletion is visible in the original H–F bond region, indicating HF dissociation and surface-driven charge rearrangement.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The charge-density difference plot shows clear electron redistribution upon HF adsorption, with electron accumulation around the fluorine atom and the surface O–H bond, and electron depletion from the original H–F bond region. This pattern is consistent with dissociative adsorption involving Al–F bond formation and proton transfer to a surface oxygen atom. The redistribution indicates that HF dissociation is electronically driven and stabilized by the surface.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Electron accumulation on the fluorine atom\\n, -Electron accumulation around the newly formed surface O–H bond\\n, -Electron depletion in the original H–F bond region\\n, -Electron depletion near surface oxygen lone-pair regions\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"On the fluorine atom and along the newly formed Al–F bonding region.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":5,"y":2,"width":333,"height":333},{"panel_id":"b","x":376,"y":2,"width":326,"height":335},{"panel_id":"c","x":733,"y":2,"width":331,"height":347}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1069,"height":344,"image_format":"jpeg","image_sha256":"40204a1d265bb554cec27ef7d95b7ed427046e43d92e74560d01213bf6980fd2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_18_fig_1.jpg","caption":"FIG. 1. Schematic model of the thermal ALE process.","id":"test/atomic-layer-etching/simulation-usecase/18/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/18/fig_1","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":7,"y":8,"width":658,"height":413}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/Origin of enhanced thermal atomic layer etching of amorphous HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":669,"height":422,"image_format":"jpeg","image_sha256":"e013b73558ad09134f89886a79f7e5047b6cbfd8698e631aa3ad9683493c346e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_21_figure_1.jpg","caption":"Figure 1. Comparison of different methods to overcome the surface binding energy, $E_{0}$ , including via (a) chemical bonds that lower $E_{0}$ ; (b) kinetic energy from vibrations; and/or (c) kinetic energy from collisions ( $\\epsilon_{\\mathrm{i}} =$ ion energy).","id":"test/atomic-layer-etching/simulation-usecase/21/figure_1","sample_id":"atomic-layer-etching/simulation-usecase/21/figure_1","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"In figure, incoming reactants chemically modify surface bonds, reducing the effective binding strength in a flux-dependent manner.\"},{\"panel_id\":\"b\",\"text\":\"In figure, thermal vibrations supply kinetic energy that enables atom detachment through an Arrhenius-type process.\"},{\"panel_id\":\"c\",\"text\":\"In figure, anisotropic energetic collisions transfer momentum directly to surface atoms, promoting displacement when the incident particle energy exceeds the local binding threshold.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Incoming reactants interact with surface-bound atoms to form transient chemical intermediates that weaken the original lattice bonds. Rather than relying on direct kinetic impact, this pathway lowers the effective binding energy by altering local coordination and bonding configuration. As reactant flux increases, the likelihood of forming these intermediates rises, making bond cleavage and subsequent removal more probable under otherwise mild energetic conditions. This reflects the chemically assisted, self-limiting character typical of ALE reactions.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The directed trajectory of the incoming energetic particle impacting a single surface atom.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher temperature increases detachment probability because the rate follows Arrhenius-type activation over the binding-energy barrier.\"}]}]","bbox":[{"panel_id":"a","x":35,"y":71,"width":167,"height":333},{"panel_id":"b","x":255,"y":78,"width":184,"height":322},{"panel_id":"c","x":458,"y":84,"width":190,"height":321}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/Review Paper -- Atomic Layer Etching Rethinking the Art of Etch.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":653,"height":414,"image_format":"jpeg","image_sha256":"66c9d91ab35407b511a15979532aa1d31994a886b0f1f6dd302420228489f183","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_21_figure_5.jpg","caption":"Figure 5. Top images are schematics showing Si bombarded by (a) reactive ions and (b) inert ions at the same energy, based on computational studies by Humbird, 2004. The lower images show AFM data on Si ALE to compare (c) RIE $\\mathrm{Cl}_2 / \\mathrm{Ar}$ plasma at $50~\\mathrm{eV}$ and (d) ALE (alternating $\\mathrm{Cl}_2$ plasma and Ar ions at $50~\\mathrm{eV}$","id":"test/atomic-layer-etching/simulation-usecase/21/figure_5","sample_id":"atomic-layer-etching/simulation-usecase/21/figure_5","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The schematic illustrates reactive Cl⁺ ion bombardment at 50 eV, where chemical interaction with Si enhances material removal and promotes surface roughening through combined chemical and physical effects.\"},{\"panel_id\":\"b\",\"text\":\"In contrast, inert Ar⁺ ions at the same energy induce predominantly physical sputtering with minimal chemical assistance, resulting in comparatively uniform surface modification.\"},{\"panel_id\":\"c\",\"text\":\"The AFM image after Si RIE using Cl₂/Ar plasma shows a highly textured surface with an RMS roughness of 2.3 nm.\"},{\"panel_id\":\"d\",\"text\":\"After Si ALE, the AFM image reveals a much smoother surface with an RMS roughness of 0.4 nm, reflecting controlled, layer-by-layer removal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Reactive Cl⁺ ions promote etching by forming transient Si–Cl surface species that weaken the local bonding network and lower the activation barrier for material removal. The ion energy further enhances surface activation by generating shallow subsurface disorder that accelerates reaction-site turnover. This dual contribution of chemical activation and mild sputtering drives nonuniform surface retreat, leading to the roughened morphology depicted in the schematic.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Higher roughness can translate into less uniform nucleation and thickness variations in subsequent layers. It may also increase interfacial defect density or local electric-field hotspots in device stacks. In practice, this can hurt yield and increase variability.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"RMS = 0.4 nm.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Sputtering is purely momentum-driven with no chemical bond activation.\\n-Surface atom removal occurs uniformly, limiting lateral etch-rate variability.\\n -The resulting morphology remains compact and smooth due to the absence of chemically amplified defect formation.\"}]}]","bbox":[{"panel_id":"a","x":45,"y":7,"width":196,"height":350},{"panel_id":"b","x":313,"y":13,"width":196,"height":340},{"panel_id":"c","x":29,"y":392,"width":269,"height":298},{"panel_id":"d","x":296,"y":387,"width":250,"height":302}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/Review Paper -- Atomic Layer Etching Rethinking the Art of Etch.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":550,"height":692,"image_format":"jpeg","image_sha256":"66a7697bf05ed37f7f0007f6be5210b49dcc8a9a38e48f0d553e859e6cebbc16","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_3861bcc5c373a41a69c8ba165bd7d244d783d2e0c9e4bf86e23d0c9570f54628.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/25/3861bcc5c373a41a69c8ba165bd7d244d783d2e0c9e4bf86e23d0c9570f54628","sample_id":"atomic-layer-etching/simulation-usecase/25/3861bcc5c373a41a69c8ba165bd7d244d783d2e0c9e4bf86e23d0c9570f54628","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic illustrating the reactant pulse stage, where fluorine- and hydrogen-containing species approach the Hf/Zr–O surface. Downward arrows indicate adsorption-driven surface interaction prior to any temperature-dependent reaction.\"},{\"panel_id\":\"b\",\"text\":\"Conceptual depiction of a self-limiting surface reaction occurring below the indicated temperature thresholds (<657 K for HfO₂ and <534 K for ZrO₂). Adsorbed species modify the surface without net material removal, consistent with saturation-limited behavior.\"},{\"panel_id\":\"c\",\"text\":\"Schematic of the etch regime activated above the temperature thresholds (>657 K for HfO₂ and >534 K for ZrO₂). Upward arrows indicate desorption of reaction products, corresponding to active material removal from the surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hf/Zr\\n, O\\n, F\\n, H\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first stage is the reactant pulse, where incoming species approach the Hf/Zr–O surface.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Above 657 K.\"}]}]","bbox":[{"panel_id":"a","x":36,"y":25,"width":287,"height":342},{"panel_id":"b","x":355,"y":17,"width":276,"height":345},{"panel_id":"c","x":660,"y":22,"width":276,"height":333}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/3861bcc5c373a41a69c8ba165bd7d244d783d2e0c9e4bf86e23d0c9570f54628.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/3861bcc5c373a41a69c8ba165bd7d244d783d2e0c9e4bf86e23d0c9570f54628.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":964,"height":372,"image_format":"jpeg","image_sha256":"c878e4e863596dcf163104d88eaa5bc6f50cc25cfe9cf5ae9e3f757966feda65","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_9d78597edd0c414a5065483cb2847f22761f74c1aeac4ac61cc7b0f77e965fd0.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/25/9d78597edd0c414a5065483cb2847f22761f74c1aeac4ac61cc7b0f77e965fd0","sample_id":"atomic-layer-etching/simulation-usecase/25/9d78597edd0c414a5065483cb2847f22761f74c1aeac4ac61cc7b0f77e965fd0","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"c","label":"conceptual diagram"},{"panel_id":"d","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"c\",\"text\":\"Energy profile diagram for \\\"Preferred etching,\\\" showing an activation barrier where both the starting state (SL) and final state (SE) lie below the zero-energy reference line.\"},{\"panel_id\":\"d\",\"text\":\"Energy profile for \\\"Purely etching,\\\" where the start state (SL) is positioned above the zero reference (X > 0) and the end state (SE) lies significantly below zero (Y < 0). The substantial net drop from start to finish suggests a strongly downhill thermodynamic outcome once the initial activation barrier is crossed.\"}]","data_extraction":"[{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The activation energy barrier.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Positive..\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. In the purely etching case, SL starts above the 0 line at level X, whereas in the preferred etching case, SL starts below 0 at level X.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"c","x":6,"y":8,"width":352,"height":205},{"panel_id":"d","x":9,"y":237,"width":351,"height":181}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/9d78597edd0c414a5065483cb2847f22761f74c1aeac4ac61cc7b0f77e965fd0.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/9d78597edd0c414a5065483cb2847f22761f74c1aeac4ac61cc7b0f77e965fd0.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"c","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":366,"height":425,"image_format":"jpeg","image_sha256":"869c137945d3da78ba2411d0de7fa3c49cb25c4ae8d85365af1ee8a1d723a47c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_2.jpg","caption":"Figure 2. Schematic representation of the relationship between continuous spontaneous etch (SE, red) and self-limiting (SL, green) processes. $\\Delta G$ represents the reaction free energy.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_2","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_2","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic illustrating the thermodynamic relationship between continuous spontaneous etching (SE, red loop) and self-limiting (SL, green path). The SE pathway corresponds to a reaction free energy ΔG = Y that enables continuous formation of volatile etch products. In contrast, the SL pathway stabilizes the surface in a non-volatile state with ΔG = X, separated from SE by an energy barrier of at least (Y − X), which suppresses uncontrolled etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It initiates surface reactions by interacting with the material, enabling either spontaneous etching or formation of a self-limiting surface state.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SL pathway leads to a thermodynamically stable, non-volatile surface configuration that does not spontaneously regenerate etch products. Once this state is reached, the system lacks sufficient driving force to re-enter the SE cycle without overcoming an additional energy barrier. This asymmetry is what enforces self-limitation in atomic layer etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SE pathway (ΔG = Y) corresponds to a thermodynamically favorable route for continuous etching, allowing repeated formation and removal of volatile products. In contrast, the SL pathway (ΔG = X) stabilizes the surface in a non-volatile configuration. Although both processes are energetically downhill, the SL state becomes kinetically trapped due to the intervening energy barrier, preventing sustained etching.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Any variable that effectively lowers the energy barrier between SL and SE—such as increased temperature, enhanced surface activation, or more reactive precursor chemistry—could drive the system toward spontaneous etching. This highlights why tight control of process conditions is critical in ALE.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":10,"width":339,"height":436}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":342,"height":447,"image_format":"jpeg","image_sha256":"7525b8dc4650dc3609562202d42474d0dc4171679e16aacc4f4e2224eb28a29d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_3.jpg","caption":"Figure 3. Schematic energy profiles representing (a) preferred self-limiting, (b) purely self-limiting, (c) preferred etching, and (d) purely etching.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_3","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_3","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"},{"panel_id":"d","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Energy profile where the self-limiting (SL) state lies at a lower free energy (X) than the spontaneous etch (SE) state (Y), favoring surface stabilization while etching remains possible but unfavorable.\"},{\"panel_id\":\"b\",\"text\":\"Energy landscape in which the SL state is strongly stabilized relative to SE, making spontaneous etching thermodynamically inaccessible.\"},{\"panel_id\":\"c\",\"text\":\"Profile showing the spontaneous etch (SE) state at lower free energy than SL, indicating that etching is thermodynamically favored but not exclusive.\"},{\"panel_id\":\"d\",\"text\":\"Energy profile where SE is significantly more stable than SL, resulting in continuous etching without self-limitation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The purely etching process (d).\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Negative.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the purely self-limiting case (b), the energy difference between the self-limiting state (SL) and the spontaneous etch state (SE) is much larger than in the preferred self-limiting case (a). This larger energy gap in (b) indicates a much stronger thermodynamic preference for the self-limiting state, making spontaneous etching significantly less likely compared to case (a).\"}]}]","bbox":[{"panel_id":"a","x":13,"y":14,"width":382,"height":193},{"panel_id":"b","x":458,"y":13,"width":383,"height":194},{"panel_id":"c","x":12,"y":240,"width":383,"height":194},{"panel_id":"d","x":451,"y":236,"width":390,"height":198}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":841,"height":434,"image_format":"jpeg","image_sha256":"a34291edc65954a0138dd27aaab6fb15a3aa42e3fb94aba43c523f03965b7d6e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_192bb9ae4326c7da9fddab833eb94589955ea0c86b9af9bb28e5db6af0677449.jpg","caption":"(a)","id":"test/atomic-layer-etching/simulation-usecase/34/192bb9ae4326c7da9fddab833eb94589955ea0c86b9af9bb28e5db6af0677449","sample_id":"atomic-layer-etching/simulation-usecase/34/192bb9ae4326c7da9fddab833eb94589955ea0c86b9af9bb28e5db6af0677449","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":580,"height":258}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/192bb9ae4326c7da9fddab833eb94589955ea0c86b9af9bb28e5db6af0677449.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/192bb9ae4326c7da9fddab833eb94589955ea0c86b9af9bb28e5db6af0677449.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":580,"height":258,"image_format":"jpeg","image_sha256":"cc1f7af6e79ece4857b4f5dc99e35ac57ab2554a330b3e0610e779271ea5357e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_8496c3174603c4d537eeb2bd96046a6ed7c4707e4f0a52088a5876039bf59733.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/34/8496c3174603c4d537eeb2bd96046a6ed7c4707e4f0a52088a5876039bf59733","sample_id":"atomic-layer-etching/simulation-usecase/34/8496c3174603c4d537eeb2bd96046a6ed7c4707e4f0a52088a5876039bf59733","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":881,"height":367}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/8496c3174603c4d537eeb2bd96046a6ed7c4707e4f0a52088a5876039bf59733.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/8496c3174603c4d537eeb2bd96046a6ed7c4707e4f0a52088a5876039bf59733.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":881,"height":367,"image_format":"jpeg","image_sha256":"e2712deb7e5ec23ba8f1297e404435373fa630b8b443843a01b58f49a9500ce9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_1.jpg","caption":"Fig. 1. Illustrations of a (a) FinFET (fin field-effect transistor) and a (b) GAA (gate all-around) transistor. FinFETs are bounded by a thickness of $7\\mathrm{nm}$ as opposed to the nanosheets in GAA transistors, which are able to continue the trend of thickness minimization. However, nanosheet thicknesses are dependent on the oxide film layer, which must be introduced in precise dosages to maintain minimal thickness specifications. (b)","id":"test/atomic-layer-etching/simulation-usecase/34/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_1","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":566,"height":263}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":566,"height":263,"image_format":"jpeg","image_sha256":"2b7c45b533682876713effc6198a967273d0d310aba29ead02b154ba39aeba58","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_2.jpg","caption":"Fig. 2. Conventional (a) and spatial (b) ALD/ALE reactor diagrams illustrating their structural and operational differences. Conventional ALD/ALE reactors contain a stationary wafer substrate that is exposed to the precursor and purge gases in sequential steps. Spatial ALD/ALE reactors feed precursor and purge species continuously in isolated zones while the wafer substrate is driven through each zone at a constant velocity on a conveyor belt. (b)","id":"test/atomic-layer-etching/simulation-usecase/34/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_2","subset":"conceptual-diagram","split":"test","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":561,"height":300}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":561,"height":300,"image_format":"jpeg","image_sha256":"fd81266c3ea17a173ea4b2e23eb866c839bc93390be6e657e5b07db8129e1b91","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/conceptual-diagram/train/metadata.jsonl b/subsets/conceptual-diagram/train/metadata.jsonl index 882a18d24752afe29e7454c01f85a794c7449c95..44d7d11f5f8a1059de7bb8745c2ff773c1de03d0 100644 --- a/subsets/conceptual-diagram/train/metadata.jsonl +++ b/subsets/conceptual-diagram/train/metadata.jsonl @@ -1,83 +1,83 @@ -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_14_figure_1.jpg","caption":"FIGURE 1: Illustration of ALD growth mechanisms and characterizations. (a) Idealized schematic of the mechanisms of ALD process for $\\mathrm{WS}_2$ growth and in situ Nb doping. The doping concentration could be controlled by adjusting $\\mathrm{NbS}_2$ cycle numbers. (b) Photographs of 400-cycle $\\mathrm{WS}_2$ films deposited on 8-inch $\\alpha -\\mathrm{Al}_2\\mathrm{O}_3 / \\mathrm{Si}$ wafer, 2-inch sapphire wafer, and pieced GaN substrates. (c) The Raman spectra of annealed $\\mathrm{WS}_2$ on $\\mathrm{Si / Al}_2\\mathrm{O}_3$ , GaN, and sapphire confirm the successful synthesis of $\\mathrm{WS}_2$ on each substrate surface.","id":"train/atomic-layer-deposition/experimental-usecase/14/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/14/figure_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/Hanjie Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1348,"height":628,"image_format":"jpeg","image_sha256":"606f691554dc3d944f3d563c718ab84b81001d69756ca47a192c8d101aeb3f39","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":864,"height":566},{"panel_id":"b","x":883,"y":11,"width":448,"height":295},{"panel_id":"c","x":881,"y":348,"width":464,"height":260}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_14_figure_4.jpg","caption":"FIGURE 4: The electrical properties of $\\mathrm{WS}_2$ n-FETs and Nb-doped $\\mathrm{WS}_2$ p-FETs. (a) CMOS-compatible process flow of FETs and schematic of device structures. (b) The transfer and output characteristics of $\\mathrm{WS}_2$ n-FET with $2\\mu \\mathrm{m}$ gate width and the mobility distribution of $30\\mathrm{WS}_2$ n-FETs. The on-current reached $0.4\\mu \\mathrm{A} / \\mu \\mathrm{m}$ , and the on/off ratio was up to $10^{5}$ . (c) The transfer and output characteristics of 15-cycle Nb-doped $\\mathrm{WS}_2$ p-FET with $2\\mu \\mathrm{m}$ gate width and the distribution of $I_d$ at $V_d = 0.5\\mathrm{V}$ and $V_g = -4\\mathrm{V}$ for $132\\mathrm{Nb}$ -doped $\\mathrm{WS}_2$ p-FETs with 25-cycle Nb doping. The carrier type changed from electron to hole, and the on-current was $5\\times 10^{-2}\\mu \\mathrm{A} / \\mu \\mathrm{m}$ . (d) The doping effects on $\\mathrm{WS}_2$ FETs. Nb dopants varied from 1 to 20 cycles. Nb-doped $\\mathrm{WS}_2$ FET did not show p-type behavior but with a decreased on- and off-current until reaching 15 cycles. After 20-cycle Nb doping, the device presented heavily p-type behavior, indicating the controllable doping. (e) The PBTI of $\\mathrm{WS}_2$ n-FET at RT. The stress was set to be $5.5\\mathrm{V}$ . After $1000\\mathrm{s}$ stress, the on-current degraded only for $3.5\\%$ , while the $\\Delta V_{\\mathrm{th}}$ was up to $300\\mathrm{mV}$ . (f) The air stability of $\\mathrm{WS}_2$ n-FET in ambient for 1, 3, and 6 months. The on-current degraded slightly within one order, while the degradation of off-current was less obvious after 3 months than that of 6 months. (g) The I-V curve of $\\mathrm{WS}_2 / \\mathrm{Nb}$ -doped $\\mathrm{WS}_2$ p-n structures with the rectifying ratio of over $10^{4}$ . The inset figure was rectifying ratio.","id":"train/atomic-layer-deposition/experimental-usecase/14/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/14/figure_4","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"bar chart"},{"panel_id":"e","label":"multiple line chart"},{"panel_id":"f","label":"multiple line chart"},{"panel_id":"g","label":"box plot"},{"panel_id":"h","label":"multi spectra chart"},{"panel_id":"i","label":"multiple scatter plot"},{"panel_id":"j","label":"multiple line chart"},{"panel_id":"k","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/Hanjie Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1339,"height":1091,"image_format":"jpeg","image_sha256":"81039482f73b502d1fb90c2cfb6a18533557676d133424758baae924771e09a2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":4,"width":309,"height":558},{"panel_id":"b","x":344,"y":8,"width":332,"height":316},{"panel_id":"c","x":709,"y":4,"width":324,"height":319},{"panel_id":"d","x":1059,"y":14,"width":276,"height":241},{"panel_id":"e","x":362,"y":381,"width":320,"height":316},{"panel_id":"f","x":692,"y":363,"width":340,"height":323},{"panel_id":"g","x":1034,"y":374,"width":300,"height":243},{"panel_id":"h","x":4,"y":757,"width":351,"height":331},{"panel_id":"i","x":376,"y":742,"width":334,"height":241},{"panel_id":"j","x":707,"y":755,"width":318,"height":315},{"panel_id":"k","x":1030,"y":758,"width":307,"height":225}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_36_fig_1.jpg","caption":"Fig. 1 Schematic representation of the ALD process during $\\mathrm{Ga_2O_3}$ deposition","id":"train/atomic-layer-deposition/experimental-usecase/36/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/36/fig_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/Huan-Yu Shih et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1345,"height":455,"image_format":"jpeg","image_sha256":"53b78723e04f8f1861f59e56bca64b09c665ad38ac470557c7dca54fe8ebea66","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":282,"y":5,"width":792,"height":441}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_15.jpg","caption":"Figure 15. Scheme for FRET-based bio-detection of viruses: (left) ALD/MLD cycle for the growth of Eu-HQA thin films, (middle) enhancement of the red PL emission of Eu-HQA achieved by depositing the film on a nanoplasmonic substrate, and (right) principle of FRET mediated emission and its possible utilization bio-detection by using Eu-HQA as a donor chromophore and commercial AF 647 as an acceptor chromophore. (Reproduced under CC licence from ref. [55], 2023, Royal society of chemistry).","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_15","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_15","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"spectra chart"},{"panel_id":"c","label":"spectra chart"},{"panel_id":"d","label":"band diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1364,"height":570,"image_format":"jpeg","image_sha256":"ec29dad05145b8b789f70760ad27959fd1d8cd3b4c96dcdf4efad6b306356814","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":422,"y":295,"width":419,"height":269},{"panel_id":"b","x":420,"y":5,"width":421,"height":291},{"panel_id":"a","x":6,"y":8,"width":410,"height":556},{"panel_id":"d","x":845,"y":3,"width":515,"height":560}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic ALD/MLD cycle to grow Eu HQA films using Eu(thd)3 and HQA with N2 purge steps.\"},{\"panel_id\":\"b\",\"text\":\"Photoluminescence of Eu HQA on a silicon substrate under 400 nm excitation, showing the Eu3+ red emission feature (5D0 to 7F2).\"},{\"panel_id\":\"c\",\"text\":\"Photoluminescence of Eu HQA deposited on a nanoplasmonic substrate, illustrating strongly enhanced Eu3+ emission under similar excitation.\"},{\"panel_id\":\"d\",\"text\":\"Energy level and device concept for FRET based bio detection, where Eu HQA acts as the donor and AF 647 as the acceptor, leading to acceptor emission near 660 nm after energy transfer.\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"| Wavelength (nm) | Intensity (Norm.) |\\n|---|---|\\n| 500 | 0.05 |\\n| 615 | 1.00 |\\n| 700 | 0.10 |\"},{\"panel_id\":\"c\",\"text\":\"| Wavelength (nm) | Intensity (Norm.) |\\n|---|---|\\n| 500 | 0.02 |\\n| 590 | 0.15 |\\n| 615 | 1.00 |\\n| 630 | 0.10 |\\n| 700 | 0.10 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HQA acts as a sensitizer for Eu3+ luminescence, extending the excitation range up to about 400 nm.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The donor is Eu HQA and the acceptor is the commercial dye AF 647. The schematic indicates acceptor emission near 660 nm following energy transfer from the excited Eu HQA donor.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Eu HQA emission intensity is strongly enhanced (reported on the order of 20 fold).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Eu(thd)3 and HQA (2 hydroxyquinoline 4 carboxylic acid).\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_2.jpg","caption":"Figure 2. Schematic illustration of ALD and ALD/MLD precursor pulsing cycles, resulting in the growth of inorganic (left) and hybrid (right) thin films with atomic/molecular level accuracy: Red: metal; Green: precursor ligand; Blue: oxygen; Light blue: organics.","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_2","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1017,"height":475,"image_format":"jpeg","image_sha256":"1a94d464458ab2fd396633dcc8eb0f398679a6dc678b4407b628de185f8eda47","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":1,"y":2,"width":997,"height":471},{"panel_id":"a","x":1,"y":2,"width":997,"height":471}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic of a conventional ALD cycle with a metal precursor pulse, purge, O3 pulse, then purge, yielding an inorganic film.\"},{\"panel_id\":\"b\",\"text\":\"Schematic of an ALD/MLD cycle with a metal precursor pulse, purge, organic precursor pulse, then purge, yielding a hybrid metal organic film.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Panel (a) uses an O3 pulse as the second reactant, while panel (b) uses an organic precursor pulse.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To introduce specific organic functional groups into the film\\n\\nTo tune film density and mechanical compliance\\n\\nTo adjust optical properties using organic chromophores or linkers\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Panel (a).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALD process in (a) builds an inorganic network through metal and oxidant half reactions. Replacing the oxidant pulse with an organic pulse in (b) implies incorporation of organic linkers between metal centers, producing a hybrid metal organic backbone rather than a purely inorganic oxide.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_7.jpg","caption":"Figure 7. Supercycle concept for doping in ALD: in the simplest case the supercycle consists of x cycles of the main metal and one cycle for the dopant metal, but the supercycle may also include several cycles of the dopant metal or several different metal-dopant.","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_7","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":652,"height":717,"image_format":"jpeg","image_sha256":"2b40c50d5d39ee02c5e30a6daba4cfaf8c6c77db321a43e90c13abdf5f0e9253","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":2,"y":2,"width":651,"height":321},{"panel_id":"a","x":0,"y":326,"width":652,"height":386}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic supercycle for ALD doping: Metal A pulse, O3 pulse, dopant pulse, then O3 pulse, with the sequence repeated X times.\"},{\"panel_id\":\"b\",\"text\":\"Cartoon of the resulting film after one supercycle for different X values (X=1, X=3, X=5), showing increased dopant incorporation as X increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Decrease.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The cartoon suggests that the dopant is incorporated as discrete layers or planes inserted into the host matrix. When X is small, dopant insertion is frequent, so the dopant planes are closer together and the overall dopant fraction is higher. When X is larger, dopant insertion is less frequent, so dopant planes are more widely spaced and the film is host rich.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Metal A pulse, O3 pulse, dopant pulse, O3 pulse.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It provides a direct handle on dopant concentration via the ratio of host cycles to dopant cycles\\n\\nIt can maintain self limiting surface reactions while introducing controlled amounts of a second cation\\n\\nIt enables systematic optimization of functional properties such as conductivity, magnetism, or luminescence by adjusting dopant level\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_8.jpg","caption":"Precursor pulsing sequenceFigure 8. Different precursor dosing schemes in different ternary ALD processes for lightly-doped, homogeneously mixed, and nanolaminate materials.","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_8","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":664,"height":311,"image_format":"jpeg","image_sha256":"23fff06b4a0a6aaf4249783e214eac8e7d634d0bff89ea540d69f90ef2605f9d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":5,"y":4,"width":661,"height":305},{"panel_id":"a","x":5,"y":4,"width":661,"height":305}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The schematic compares three ALD pulsing strategies, doping, homogeneous mixing, and nanolaminates, showing how different sequences of precursor A and precursor B cycles yield different film architectures.\"},{\"panel_id\":\"b\",\"text\":\"A legend defines the color coding for precursor A, precursor B, co reactant, and purging steps used in the pulse sequence cartoons.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A homogeneous mixed film has A and B distributed throughout the thickness without discrete layers, whereas a nanolaminate has alternating A rich and B rich layers.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Purging steps.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the doping style sequence, precursor B is inserted only occasionally among many precursor A cycles, so B contributes a low fraction of the incorporated cations and is distributed within an A rich matrix. In a nanolaminate sequence, blocks of A cycles and blocks of B cycles are repeated, which builds an intentional layered stacking. Because ALD is surface controlled, the sequence design is a primary lever for whether B is dispersed or segregated into layers.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Nanolaminates\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_9_figure_27.jpg","caption":"FIGURE 27.1 The coverage metrics of a film on a substrate with three-dimensional features. Coverage of the planar surface is evaluated using the uniformity while the coverage of three-dimensional features is evaluated using the conformality. The growth control over the film thickness itself is another important metric. The ability to achieve these metrics at low temperatures is an additional important aspect.","id":"train/atomic-layer-deposition/experimental-usecase/9/figure_27","sample_id":"atomic-layer-deposition/experimental-usecase/9/figure_27","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/9/images/figure_27.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/9/images/figure_27.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/9/H.C.M. Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":775,"height":294,"image_format":"jpeg","image_sha256":"15e4b4d9b695313cbf4dfb4e5eea37d378098c1f5882acf1d1230b08c9cdd170","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":11,"y":3,"width":687,"height":289}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure basically illustrates essential thin-film coverage metrics over planar and 3D substrate features, illustrating how uniformity, conformality, and growth control define overall film quality. It also highlights how important it is for advanced device fabrication to achieve these parameters at low substrate temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Uniformity assesses planar surface covering, while conformality evaluates coverage over three-dimensional characteristics.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Precise control of uniformity, conformality, and growth allows thin films to work consistently on both planar and complex 3D device topologies. Reaching these parameters guarantees uniform mechanical, optical, and electrical behaviour throughout the substrate. Low-temperature processing is especially crucial for temperature-sensitive materials and future flexible or polymer-based electronics, enabling high-quality films without damaging the underlying structures.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Planar regions → evaluated using uniformity, 3D trenches or high-aspect-ratio features → evaluated using conformality, Film thickness precision → assessed using growth control, Thermal sensitivity of substrate → tied to low-temperature deposition requirements\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_10_figure_1.jpg","caption":"Figure 1. Schematic representation of the area-selective ALD process of $\\mathrm{In}_2\\mathrm{O}_3{:}\\mathrm{H}$ on H-terminated silicon materials. In the first step (1), microscale patterns are defined by activating the surface with a $\\mu$ plasma operated in air or $\\mathrm{O}_2$ . In the second step (2), the $\\mathrm{In}_2\\mathrm{O}_3{:}\\mathrm{H}$ is deposited selectively on the activated areas in a building step. The ALD process consists of two alternating half reactions: $\\mathrm{InCp}$ precursor dosing in pulse A and a mixture of $\\mathrm{O}_2$ and $\\mathrm{H}_2\\mathrm{O}$ dosing in pulse B. Note that in the case that conductive substrates are used, a thin dielectric membrane $(\\mathrm{Al}_2\\mathrm{O}_3)$ is positioned between the needles and the substrate, as shown in Figure S1a.","id":"train/atomic-layer-deposition/simulation-usecase/10/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/10/figure_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1017,"height":503,"image_format":"jpeg","image_sha256":"a05e7eb2ea2a449285fbf5a96dd00a1506b76e6d9f0bcd8ba258a4fd55034c41","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":307,"y":3,"width":688,"height":497},{"panel_id":"a","x":4,"y":4,"width":303,"height":501}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Patterning step (surface modification by μ-plasma): a μ-plasma “printer” locally activates selected regions of an initially H-terminated silicon-based surface, creating a chemical contrast between activated and non-activated areas for subsequent selective growth.\"},{\"panel_id\":\"b\",\"text\":\"Building step (area-selective ALD): In₂O₃:H grows selectively on the plasma-activated areas during alternating ALD half-cycles (Pulse A: InCp dose; Pulse B: H₂O + O₂ dose). The schematic shows the 1st ALD cycle initiating nucleation only on activated regions and the nᵗʰ cycle building thickness there while non-activated regions remain largely inhibited due to long nucleation delay.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the 1st cycle, the main challenge is nucleation: growth begins only where the surface has been activated. By the nᵗʰ cycle, those activated regions have an existing film, so growth proceeds more straightforwardly and thickness builds up locally. The non-activated regions are intended to stay largely free of In₂O₃:H over many cycles because their nucleation delay is much longer.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Step 1 (Patterning): local surface activation using a μ-plasma\\n\\nStep 2 (Building): area-selective ALD of In₂O₃:H on the activated areas\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The selectivity relies on a contrast between H-terminated silicon (initial surface) and plasma-activated silicon (more oxide-/OH-like). In₂O₃:H ALD has a long nucleation delay on the H-terminated surface but nucleates much more readily on the activated surface. This chemical-state difference is what converts the plasma “pattern” into a growth/no-growth pattern during ALD.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It combines pattern definition and film deposition in a bottom-up sequence, reducing reliance on repeated lithography/etch steps that can damage or contaminate films. The method targets microscale patterns relevant for large-area electronics and patterned TCOs (e.g., displays and photovoltaics). In principle, this can improve throughput and simplify process flows while retaining high In₂O₃:H film quality.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_4.jpg","caption":"Figure 4: The ABC-type atomic layer deposition technique for ASALD employing small inhibitor molecules. (a) Absorption of inhibitor molecules unto the non-growth region. (b) The inhibitor molecules impede the precursor molecules' adsorption on the non-growing region. (c) The co-reactant gets rid of the precursor ligands and the inhibitor molecules from the system.","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_4","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1372,"height":514,"image_format":"jpeg","image_sha256":"d44b386443ae21d132ade53c4424ed31a73ae044cca246fbcf51649c6f447816","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":917,"y":56,"width":450,"height":377},{"panel_id":"b","x":468,"y":49,"width":447,"height":462},{"panel_id":"a","x":6,"y":49,"width":452,"height":462}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_19_e70a78e89322dc51a23a861148b7b0e471c521978b82552b2fde84db664cb782.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/19/e70a78e89322dc51a23a861148b7b0e471c521978b82552b2fde84db664cb782","sample_id":"atomic-layer-deposition/simulation-usecase/19/e70a78e89322dc51a23a861148b7b0e471c521978b82552b2fde84db664cb782","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/e70a78e89322dc51a23a861148b7b0e471c521978b82552b2fde84db664cb782.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/e70a78e89322dc51a23a861148b7b0e471c521978b82552b2fde84db664cb782.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/Dong-Gyu Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":741,"height":450,"image_format":"jpeg","image_sha256":"b229afb494a909079c9128d32ae12d59dc5dd234fa86cc7832d10ec55a80b8ea","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":399,"y":355,"width":338,"height":89},{"panel_id":"b","x":380,"y":99,"width":358,"height":240},{"panel_id":"a","x":68,"y":91,"width":304,"height":360}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The given chart is a graphical abstract representing the major results as a compiled summary to reflect the highlights of the paper. The image panel displays various molecular structures and diagrams related to plasma treatment and electrical characteristics.\"},{\"panel_id\":\"b\",\"text\":\"The multiple line chart illustrates the drain current as a function of gate voltage for different plasma treatments and durations.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Gate Voltage (V) | Drain Current (A) | Condition | Remark |\\n|-----------------:|------------------:|------------------|------------------------------------------|\\n| -5 | 10⁻¹² | O₂⁺ 1 s | |\\n| -5 | 10⁻¹² | N₂O⁺ 1 s | |\\n| -5 | 10⁻¹³ | N₂O⁺ 5 s | |\\n| -5 | 10⁻¹² | Pristine | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -5 | 10⁻¹² | 100 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -5 | 10⁻¹² | 500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -5 | 10⁻¹² | 1500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -5 | 10⁻¹² | 2000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -5 | 10⁻¹² | 2500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -5 | 10⁻¹² | 3000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -5 | 10⁻¹² | 3600 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -5 | 10⁻¹² | 7200 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -5 | 10⁻¹² | 10000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -4 | 10⁻¹² | O₂⁺ 1 s | |\\n| -4 | 10⁻¹² | N₂O⁺ 1 s | |\\n| -4 | 10⁻¹³ | N₂O⁺ 5 s | |\\n| -4 | 10⁻¹² | Pristine | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -4 | 10⁻¹² | 100 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -4 | 10⁻¹² | 500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -4 | 10⁻¹² | 1500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -4 | 10⁻¹² | 2000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -4 | 10⁻¹² | 2500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -4 | 10⁻¹² | 3000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -4 | 10⁻¹² | 3600 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -4 | 10⁻¹² | 7200 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -4 | 10⁻¹² | 10000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -2 | 10⁻¹² | O₂⁺ 1 s | |\\n| -2 | 10⁻¹² | N₂O⁺ 1 s | |\\n| -2 | 10⁻¹³ | N₂O⁺ 5 s | |\\n| -2 | 10⁻¹² | Pristine | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -2 | 10⁻¹² | 100 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -2 | 10⁻¹² | 500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -2 | 10⁻¹² | 1500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -2 | 10⁻¹² | 2000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -2 | 10⁻¹² | 2500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -2 | 10⁻¹² | 3000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -2 | 10⁻¹² | 3600 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -2 | 10⁻¹² | 7200 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -2 | 10⁻¹² | 10000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 0 | 10⁻⁵ | O₂⁺ 1 s | |\\n| 0 | 10⁻⁵ | N₂O⁺ 1 s | |\\n| 0 | 10⁻⁶ | N₂O⁺ 5 s | |\\n| 0 | 10⁻¹² | Pristine | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 0 | 10⁻¹² | 100 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 0 | 10⁻¹² | 500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 0 | 10⁻¹² | 1500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 0 | 10⁻¹² | 2000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 0 | 10⁻¹² | 2500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 0 | 10⁻¹² | 3000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 0 | 10⁻¹² | 3600 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 0 | 10⁻¹² | 7200 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 0 | 10⁻¹² | 10000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 2 | 10⁻⁴ | O₂⁺ 1 s | |\\n| 2 | 10⁻⁴ | N₂O⁺ 1 s | |\\n| 2 | 10⁻⁵ | N₂O⁺ 5 s | |\\n| 2 | 10⁻⁵ | Pristine | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 2 | 10⁻⁵ | 100 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 2 | 10⁻⁵ | 500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 2 | 10⁻⁵ | 1500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 2 | 10⁻⁵ | 2000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 2 | 10⁻⁵ | 2500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 2 | 10⁻⁵ | 3000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 2 | 10⁻⁵ | 3600 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 2 | 10⁻⁵ | 7200 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 2 | 10⁻⁵ | 10000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 4 | 10⁻⁴ | O₂⁺ 1 s | |\\n| 4 | 10⁻⁴ | N₂O⁺ 1 s | |\\n| 4 | 10⁻⁴ | N₂O⁺ 5 s | |\\n| 4 | 10⁻⁴ | Pristine | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 4 | 10⁻⁴ | 100 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 4 | 10⁻⁴ | 500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 4 | 10⁻⁴ | 1500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 4 | 10⁻⁴ | 2000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 4 | 10⁻⁴ | 2500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 4 | 10⁻⁴ | 3000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 4 | 10⁻⁴ | 3600 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 4 | 10⁻⁴ | 7200 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 4 | 10⁻⁴ | 10000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Breaking the trade-off. Usually, adding nitrogen to improve stability (low ΔV_TH) comes at the cost of destroying mobility (low μ_FE). This selective route achieves high stability (ΔV_TH = 0.45 V) without sacrificing high mobility (>100 cm² V⁻¹ s⁻¹). It effectively combines the best properties of both plasma types, avoiding the usual engineering compromise.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"True Black Levels & Energy Efficiency. The low off-current (10⁻¹³ A) prevents charge leakage from the pixel capacitor, ensuring that \\\"black\\\" pixels stay truly black without flickering or graying out. The steep slope allows the pixel to switch extremely fast between on/off states with minimal voltage swing, reducing power consumption and motion blur.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Indium oxide layer: Standard O₂ plasma\\n\\n, Gallium oxide layer: Selective N₂O plasma\\n\\n, Zinc oxide layer: Standard O₂ plasma\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Vacancy Passivation. The diagram shows a Nitrogen atom occupying a site that was previously an Oxygen Vacancy (V_o, orange 'V' circle). By filling this vacancy, the Nitrogen atom eliminates a defect site that would otherwise act as an electron trap, thereby 'healing' the lattice structure and improving stability without destroying the carrier transport network.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_19_figure_3.jpg","caption":"Figure 3. Electrical characteristics of the selective $\\mathrm { N } _ { 2 } \\mathrm { O }$ applied IGZO TFTs. (a) Schematic of selective ${ \\bf N } _ { 2 } { \\bf O }$ plasma reactant applications in IGZO active layers. Transfer curves and extracted $\\mu _ { \\mathrm { F E } }$ as a function of gate voltages of the IGZO TFTs with selective $\\Nu _ { 2 } \\mathrm { O }$ plasma applied for $\\left( \\boldsymbol { \\mathbf { b } } , \\boldsymbol { \\mathbf { e } } \\right)$ indium oxide, $( \\mathbf { c } , \\mathbf { f } )$ gallium oxide, and $( \\mathbf { d } , \\mathbf { g } )$ zinc oxide.","id":"train/atomic-layer-deposition/simulation-usecase/19/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/19/figure_3","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multiple scatter plot"},{"panel_id":"d","label":"multiple scatter plot"},{"panel_id":"e","label":"multiple scatter plot"},{"panel_id":"f","label":"multiple scatter plot"},{"panel_id":"g","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/Dong-Gyu Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1239,"height":1595,"image_format":"jpeg","image_sha256":"1dc7769540eedd87f1393992d55d9d471c4942323ccb31f93289202bd2bf02d3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"d","x":853,"y":613,"width":381,"height":450},{"panel_id":"b","x":7,"y":595,"width":407,"height":470},{"panel_id":"c","x":429,"y":601,"width":398,"height":470},{"panel_id":"g","x":850,"y":1132,"width":384,"height":461},{"panel_id":"e","x":0,"y":1112,"width":424,"height":476},{"panel_id":"f","x":434,"y":1120,"width":401,"height":470},{"panel_id":"a","x":7,"y":5,"width":1230,"height":556}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic illustrating selective application of N₂O* plasma to individual oxide sub-layers (In₂O₃, Ga₂O₃, and ZnO) within the IGZO active layer, along with corresponding effects on drain current and field-effect mobility.\"},{\"panel_id\":\"b\",\"text\":\"Transfer characteristics (Iᴅs vs. Vɢs) of IGZO TFTs with selective N₂O* and O₂* plasma applied to the indium oxide sub-cycle for 1 s and 5 s.\"},{\"panel_id\":\"c\",\"text\":\"Transfer characteristics (Iᴅs vs. Vɢs) of IGZO TFTs with selective N₂O* and O₂* plasma applied to the gallium oxide sub-cycle for 1 s and 5 s.\"},{\"panel_id\":\"d\",\"text\":\"Transfer characteristics (Iᴅs vs. Vɢs) of IGZO TFTs with selective N₂O* and O₂* plasma applied to the zinc oxide sub-cycle for 1 s and 5 s.\"},{\"panel_id\":\"e\",\"text\":\"Field-effect mobility (μғᴇ) as a function of gate voltage for IGZO TFTs with selective N₂O* and O₂* plasma applied to the indium oxide sub-cycle.\"},{\"panel_id\":\"f\",\"text\":\"Field-effect mobility (μғᴇ) as a function of gate voltage for IGZO TFTs with selective N₂O* and O₂* plasma applied to the gallium oxide sub-cycle.\"},{\"panel_id\":\"g\",\"text\":\"Field-effect mobility (μғᴇ) as a function of gate voltage for IGZO TFTs with selective N₂O* and O₂* plasma applied to the zinc oxide sub-cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Gate Voltage (V) | Drain Current (A) |Indium Oxide |\\n|-----------------|------------------|-----------|\\n| -6 | 10⁻¹² | O₂ 1s* |\\n| -6 | 10⁻¹² | N₂O 1s* |\\n| -6 | 10⁻¹² | N₂O 5s* |\\n| -5 | 10⁻¹² | O₂ 1s* |\\n| -5 | 10⁻¹² | N₂O 1s* |\\n| -5 | 10⁻¹² | N₂O 5s* |\\n| -4 | 10⁻¹² | O₂ 1s* |\\n| -4 | 10⁻¹² | N₂O 1s* |\\n| -4 | 10⁻¹² | N₂O 5s* |\\n| -3 | 10⁻¹¹ | O₂ 1s* |\\n| -3 | 10⁻¹¹ | N₂O 1s* |\\n| -3 | 10⁻¹¹ | N₂O 5s* |\\n| -2 | 10⁻⁸ | O₂ 1s* |\\n| -2 | 10⁻⁹ | N₂O 1s* |\\n| -2 | 10⁻¹⁰ | N₂O 5s* |\\n| -1 | 10⁻⁶ | O₂ 1s* |\\n| -1 | 10⁻⁷ | N₂O 1s* |\\n| -1 | 10⁻⁸ | N₂O 5s* |\\n| 0 | 10⁻⁵ | O₂ 1s* |\\n| 0 | 10⁻⁶ | N₂O 1s* |\\n| 0 | 10⁻⁶ | N₂O 5s* |\\n| 1 | 10⁻⁵ | O₂ 1s* |\\n| 1 | 10⁻⁵ | N₂O 1s* |\\n| 1 | 10⁻⁵ | N₂O 5s* |\\n| 2 | 10⁻⁴ | O₂ 1s* |\\n| 2 | 10⁻⁴ | N₂O 1s* |\\n| 2 | 10⁻⁵ | N₂O 5s* |\\n| 3 | 10⁻⁴ | O₂ 1s* |\\n| 3 | 10⁻⁴ | N₂O 1s* |\\n| 3 | 10⁻⁵ | N₂O 5s* |\\n| 4 | 10⁻⁴ | O₂ 1s* |\\n| 4 | 10⁻⁴ | N₂O 1s* |\\n| 4 | 10⁻⁴ | N₂O 5s* |\"},{\"panel_id\":\"c\",\"text\":\"| Gate Voltage (V) | Drain Current (A) | Gallium Oxide |\\n|-----------------|------------------|-----------|\\n| -6 | 10⁻¹² | O₂ 1s* |\\n| -6 | 10⁻¹² | N₂O 1s* |\\n| -6 | 10⁻¹² | N₂O 5s* |\\n| -5 | 10⁻¹² | O₂ 1s* |\\n| -5 | 10⁻¹² | N₂O 1s* |\\n| -5 | 10⁻¹² | N₂O 5s* |\\n| -4 | 10⁻¹² | O₂ 1s* |\\n| -4 | 10⁻¹² | N₂O 1s* |\\n| -4 | 10⁻¹² | N₂O 5s* |\\n| -3 | 10⁻¹¹ | O₂ 1s* |\\n| -3 | 10⁻¹¹ | N₂O 1s* |\\n| -3 | 10⁻¹¹ | N₂O 5s* |\\n| -2 | 10⁻⁹ | O₂ 1s* |\\n| -2 | 10⁻⁹ | N₂O 1s* |\\n| -2 | 10⁻¹⁰ | N₂O 5s* |\\n| -1 | 10⁻⁷ | O₂ 1s* |\\n| -1 | 10⁻⁷ | N₂O 1s* |\\n| -1 | 10⁻⁸ | N₂O 5s* |\\n| 0 | 10⁻⁵ | O₂ 1s* |\\n| 0 | 10⁻⁵ | N₂O 1s* |\\n| 0 | 10⁻⁶ | N₂O 5s* |\\n| 1 | 10⁻⁴ | O₂ 1s* |\\n| 1 | 10⁻⁴ | N₂O 1s* |\\n| 1 | 10⁻⁵ | N₂O 5s* |\\n| 2 | 10⁻⁴ | O₂ 1s* |\\n| 2 | 10⁻⁴ | N₂O 1s* |\\n| 2 | 10⁻⁴ | N₂O 5s* |\\n| 3 | 10⁻⁴ | O₂ 1s* |\\n| 3 | 10⁻⁴ | N₂O 1s* |\\n| 3 | 10⁻⁴ | N₂O 5s* |\\n| 4 | 10⁻³ | O₂ 1s* |\\n| 4 | 10⁻⁴ | N₂O 1s* |\\n| 4 | 10⁻⁴ | N₂O 5s* |\"},{\"panel_id\":\"d\",\"text\":\"| Gate Voltage (V) | Drain Current (A) | Zinc Oxide |\\n|----------------|----------------|-----------|\\n| -6 | 10⁻¹² | O₂ 1s* |\\n| -6 | 10⁻¹² | N₂O 1s* |\\n| -6 | 10⁻¹² | N₂O 5s* |\\n| -5 | 10⁻¹² | O₂ 1s* |\\n| -5 | 10⁻¹² | N₂O 1s* |\\n| -5 | 10⁻¹² | N₂O 5s* |\\n| -4 | 10⁻¹² | O₂ 1s* |\\n| -4 | 10⁻¹² | N₂O 1s* |\\n| -4 | 10⁻¹² | N₂O 5s* |\\n| -3 | 10⁻¹¹ | O₂ 1s* |\\n| -3 | 10⁻¹¹ | N₂O 1s* |\\n| -3 | 10⁻¹¹ | N₂O 5s* |\\n| -2 | 10⁻⁹ | O₂ 1s* |\\n| -2 | 10⁻⁹ | N₂O 1s* |\\n| -2 | 10⁻¹⁰ | N₂O 5s* |\\n| -1 | 10⁻⁷ | O₂ 1s* |\\n| -1 | 10⁻⁷ | N₂O 1s* |\\n| -1 | 10⁻⁸ | N₂O 5s* |\\n| 0 | 10⁻⁵ | O₂ 1s* |\\n| 0 | 10⁻⁶ | N₂O 1s* |\\n| 0 | 10⁻⁶ | N₂O 5s* |\\n| 1 | 10⁻⁵ | O₂ 1s* |\\n| 1 | 10⁻⁵ | N₂O 1s* |\\n| 1 | 10⁻⁵ | N₂O 5s* |\\n| 2 | 10⁻⁴ | O₂ 1s* |\\n| 2 | 10⁻⁴ | N₂O 1s* |\\n| 2 | 10⁻⁵ | N₂O 5s* |\\n| 3 | 10⁻⁴ | O₂ 1s* |\\n| 3 | 10⁻⁴ | N₂O 1s* |\\n| 3 | 10⁻⁴ | N₂O 5s* |\\n| 4 | 10⁻⁴ | O₂ 1s* |\\n| 4 | 10⁻⁴ | N₂O 1s* |\\n| 4 | 10⁻⁴ | N₂O 5s* |\"},{\"panel_id\":\"e\",\"text\":\"| Gate Voltage (V) | Field Effect Mobility (cm²/Vs) | Indium Oxide Condition |\\n|-----------------|-------------------------------|------------------------|\\n| -4 | — | O₂* 1 s |\\n| -4 | — | N₂O* 1 s |\\n| -4 | 1.62 | N₂O* 5 s |\\n| -2 | 0.77 | O₂* 1 s |\\n| -2 | — | N₂O* 1 s |\\n| -2 | 0.77 | N₂O* 5 s |\\n| -1 | 2.57 | O₂* 1 s |\\n| -1 | — | N₂O* 1 s |\\n| -1 | 0.74 | N₂O* 5 s |\\n| 0 | 130 | O₂* 1 s |\\n| 0 | 7.21 | N₂O* 1 s |\\n| 0 | 1.11 | N₂O* 5 s |\\n| 2 | 58.63 | O₂* 1 s |\\n| 2 | 47.56 | N₂O* 1 s |\\n| 2 | 16.39 | N₂O* 5 s |\\n| 4 | 47.56 | O₂* 1 s |\\n| 4 | 39.31 | N₂O* 1 s |\\n| 4 | 22.74 | N₂O* 5 s |\"},{\"panel_id\":\"f\",\"text\":\"| Gate Voltage (V) | Field Effect Mobility (cm²/Vs) | Gallium Oxide Condition |\\n|-----------------|-------------------------------|-------------------------|\\n| -4 | — | O₂* 1 s |\\n| -4 | — | N₂O* 1 s |\\n| -4 | 0.7 | N₂O* 5 s |\\n| -2 | — | O₂* 1 s |\\n| -2 | — | N₂O* 1 s |\\n| -2 | 0.7 | N₂O* 5 s |\\n| -1 | 8.86 | O₂* 1 s |\\n| -1 | 7.07 | N₂O* 1 s |\\n| -1 | 0.7 | N₂O* 5 s |\\n| 0 | 136.9 | O₂* 1 s |\\n| 0 | 131 | N₂O* 1 s |\\n| 0 | 10.72 | N₂O* 5 s |\\n| 2 | 57 | O₂* 1 s |\\n| 2 | 56 | N₂O* 1 s |\\n| 2 | 48 | N₂O* 5 s |\\n| 4 | 50 | O₂* 1 s |\\n| 4 | 48 | N₂O* 1 s |\\n| 4 | 40 | N₂O* 5 s |\"},{\"panel_id\":\"g\",\"text\":\"| Gate Voltage (V) | Field Effect Mobility (cm²/Vs) | Zinc Oxide Condition |\\n|-----------------|------------------------------|---------------------|\\n| -4 | — | O₂* 1 s |\\n| -4 | — | N₂O* 1 s |\\n| -4 | 0.7 | N₂O* 5 s |\\n| -2 | — | O₂* 1 s |\\n| -2 | — | N₂O* 1 s |\\n| -2 | 0.7 | N₂O* 5 s |\\n| -1 | 6.17 | O₂* 1 s |\\n| -1 | — | N₂O* 1 s |\\n| -1 | 0.7 | N₂O* 5 s |\\n| 0 | 136 | O₂* 1 s |\\n| 0 | 108 | N₂O* 1 s |\\n| 0 | 1.65 | N₂O* 5 s |\\n| 2 | 55 | O₂* 1 s |\\n| 2 | 49 | N₂O* 1 s |\\n| 2 | 42 | N₂O* 5 s |\\n| 4 | 46 | O₂* 1 s |\\n| 4 | 40 | N₂O* 1 s |\\n| 4 | 36 | N₂O* 5 s |\"}]","vqa":"[{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Gallium oxide (IG*ZO). In panel (f), the mobility curve for the N₂O-treated sample (Red line) remains close to the reference, whereas Indium (panel e) and Zinc (panel g) treatments cause severe mobility degradation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Carrier conduction path. Indium 5s orbitals form the primary conduction band minimum. N₂O treatment during the Indium cycle disrupts orbital overlap or excessively reduces carrier density, leading to a collapse in electron mobility.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Best trade-off. The IGZO sample maintains high mobility comparable to the reference while delivering the greatest improvement in stability, unlike Indium- or Zinc-treated samples that degrade electrical performance.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Pulse substitution. The N₂O plasma step is selectively substituted only during a specific cation sub-cycle (e.g., Gallium or Indium), while O₂ plasma is used for the remaining cation layers.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_25_figure_3.jpg","caption":"Figure 3. CLD simulation box snapshots. (A) Precursor injection, (B) water injection, (C) solvent addition and surface relaxation, and (D) surface after relaxation. Color code: red = aluminum, blue = oxygen, yellow = hydrogen, and white = O-sec-Bu ligand. Solvent atoms in panel C are shown with a reduced size.","id":"train/atomic-layer-deposition/simulation-usecase/25/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/25/figure_3","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"},{"panel_id":"d","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/Kristopher S. Brown et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":842,"height":297,"image_format":"jpeg","image_sha256":"9909e19fcf615858cedc22f06c23ca12f174729e20d8d48cc48c24d7e891e84b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":216,"height":292},{"panel_id":"b","x":221,"y":0,"width":209,"height":296},{"panel_id":"c","x":472,"y":7,"width":152,"height":289},{"panel_id":"d","x":653,"y":18,"width":186,"height":277}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_29_fig_2.jpg","caption":"Fig. 2. An example of ALD as an adsorption process. \"1\" represents the initial solution, which includes the precursor and inert gas, \"0\" represents the substrate, which is the adsorbent, \"ll\" is the bulk phase and \"ll\" is the ASS phase.","id":"train/atomic-layer-deposition/simulation-usecase/29/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/29/fig_2","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":650,"height":281,"image_format":"jpeg","image_sha256":"684b8ee560f07a866cb405f7f368c0c46b58a0bd3aa8d247c433614b5f79d0d5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":1,"width":645,"height":278}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_29_fig_3.jpg","caption":"Fig. 3. (a) The total amount of fluid molecules is divided into two independent phases that are assumed to be homogeneous: the adsorbed or surface phase and the bulk phase. (b) The adsorbate solid solution is defined as the reference system, and the bulk phase is considered to be uninfluenced by the solid.","id":"train/atomic-layer-deposition/simulation-usecase/29/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/29/fig_3","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":647,"height":402,"image_format":"jpeg","image_sha256":"382ff99ff99ac3781cc514abc193592c1efb2287efd28ad77166769ab0b525b1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":8,"width":299,"height":392},{"panel_id":"b","x":348,"y":8,"width":295,"height":385}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_fc74a7a43c2b4e7c76706ffb02402008e78e3a13e96c96e04dbe586e50ac0aef.jpg","caption":"Scheme 1. An Overview of the AS-ALD Process Studied in This Work","id":"train/atomic-layer-deposition/simulation-usecase/30/fc74a7a43c2b4e7c76706ffb02402008e78e3a13e96c96e04dbe586e50ac0aef","sample_id":"atomic-layer-deposition/simulation-usecase/30/fc74a7a43c2b4e7c76706ffb02402008e78e3a13e96c96e04dbe586e50ac0aef","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/fc74a7a43c2b4e7c76706ffb02402008e78e3a13e96c96e04dbe586e50ac0aef.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/fc74a7a43c2b4e7c76706ffb02402008e78e3a13e96c96e04dbe586e50ac0aef.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1281,"height":575,"image_format":"jpeg","image_sha256":"d8602adc4d116e9f70e97bab53c4fcae688c9c89dcb96734ed8f5d92af27782e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":4,"width":376,"height":570},{"panel_id":"b","x":384,"y":4,"width":411,"height":570},{"panel_id":"c","x":799,"y":4,"width":483,"height":566}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The SMI treatment step shows the TMPS inhibitor structure (propyl blocking group, methoxy reactive groups) and its selective binding to silanol groups on the non-growth surface (a-SiO₂) while not affecting the growth surface (Cu). The red X indicates the SMI does not bind to Cu.\"},{\"panel_id\":\"b\",\"text\":\"The ideal AS-ALD outcome where Al₂O₃ deposits exclusively on Cu(111) while the intact SMI layer completely protects the silica surface from deposition.\"},{\"panel_id\":\"c\",\"text\":\"The realistic AS-ALD scenario where the SMI blocking layer progressively degrades, allowing Al₂O₃ nucleation on the NGS. Actual selectivity is determined by the ratio of nucleation between surfaces.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Green = aluminum, blue = silicon, red = oxygen, white = hydrogen (as indicated in the legend at bottom left).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The SMI's methoxy reactive groups undergo condensation reactions specifically with surface silanol (Si−OH) groups present on a-SiO₂, which are absent on the Cu(111) surface.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In ideal AS-ALD, the SMI layer completely blocks Al₂O₃ growth on the non-growth surface while deposition proceeds normally on Cu. In real AS-ALD, the blocking layer progressively disintegrates through reactions with precursors and co-reactants, leading to Al₂O₃ nucleation within the degraded SMI layer on the NGS.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Selectivity is determined by the ratio of Al₂O₃ nucleation between the NGS and GS, not simply by whether the blocking layer remains intact.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_6.jpg","caption":"Figure 6. Dependency of the reaction energies of DB and SB/SB SMI configurations on the $\\mathrm{Si - OH}$ distance. (a) Scheme visualizing the initial inter-silanol distance $(d_{\\mathrm{init}})$ , the DB $\\mathrm{O_{surf}}$ bonding distance $(d_{\\mathrm{bond}})$ , and their difference $(\\Delta d)$ . (b) Plot showing the dependence of $E_{\\mathrm{elec}}$ on the $\\Delta d$ for DB SMI configurations, with A.1-O:13 as the reference. (c and d) Dependence of $E_{\\mathrm{elec}}$ of the SB/SB configurations on $d_{\\mathrm{bond}}$ and $\\Delta d$ , respectively, with the geminal A.1-O:34 configuration being the reference (empty circle).","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_6","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"},{"panel_id":"d","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":458,"height":1167,"image_format":"jpeg","image_sha256":"edb813b12206e5feaaf8ac58a04c1d60e250669c224f79bab0546dee2a0aac07","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":36,"width":443,"height":192},{"panel_id":"b","x":3,"y":262,"width":443,"height":276},{"panel_id":"c","x":3,"y":568,"width":456,"height":284},{"panel_id":"d","x":3,"y":889,"width":453,"height":275}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Conceptual diagram defining the distance metrics for analyzing SMI bonding configurations. d_init is the initial inter-silanol distance on the free surface, d_bond is the distance between surface oxygen atoms after forming a doubly bonded (DB) SMI, and Δd is their absolute difference representing the structural distortion required for bonding.\"},{\"panel_id\":\"b\",\"text\":\"Scatter plot showing electronic energy (ΔE_elec) versus Δd for DB SMI configurations, referenced to the most stable A.1-O:13 configuration. Below Δd = 1.2 Å, energies remain moderate (~50 kJ/mol). Beyond this threshold, ΔE_elec increases dramatically (>100 kJ/mol), indicating large energy penalties for DB formation when significant silanol rearrangement is required.\"},{\"panel_id\":\"c\",\"text\":\"Scatter plot showing ΔE_elec versus d_bond for SB/SB configurations (two singly bonded SMIs sharing adjacent silanols), referenced to geminal A.1-O:34 (empty circle). Electronic stability increases (more negative ΔE_elec) with larger d_bond, indicating that greater separation between two SB SMIs reduces steric repulsion.\"},{\"panel_id\":\"d\",\"text\":\"Scatter plot showing ΔE_elec versus Δd for SB/SB configurations. Larger Δd correlates with less negative ΔE_elec, showing that surface distortion to accommodate two adjacent SMIs imposes an energy penalty that partially offsets the stabilization from increased separation.\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"| Delta d (Å) | Delta E_elec (kJ/mol) |\\n|---|---|\\n| 0.20 | 0 |\\n| 0.30 | 25 |\\n| 0.70 | 45 |\\n| 0.90 | 50 |\\n| 1.05 | 50 |\\n| 1.20 | 50 |\\n| 1.60 | 140 |\\n| 1.85 | 120 |\\n| 1.95 | 60 |\\n| 2.25 | 230 |\\n| 3.00 | 155 |\"},{\"panel_id\":\"c\",\"text\":\"| d_bond (Å) | Delta E_elec (kJ/mol) |\\n|---|---|\\n| 2.65 | 0 |\\n| 3.52 | -19 |\\n| 3.62 | -34 |\\n| 4.18 | -56 |\"},{\"panel_id\":\"d\",\"text\":\"| Delta d (Å) | Delta E_elec (kJ/mol) |\\n|---|---|\\n| 0.00 | 0 |\\n| 0.30 | -55 |\\n| 0.60 | -35 |\\n| 1.35 | -20 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The empty circle represents the geminal A.1-O:34 SB/SB configuration, which serves as the reference point (ΔE_elec = 0) for comparing other SB/SB configurations.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The data show that short inter-silanol distances (d_init < 4 Å) favor DB configuration formation, while larger distances favor two separate SB SMIs. By analyzing the silanol distribution on a given surface, one can predict which binding motif will be energetically preferred at each site. This allows systematic derivation of the most stable full-coverage blocking layer without computing all possible permutations, by simply matching silanol pair distances to the appropriate bonding mode.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This threshold marks the boundary between feasible and unfeasible doubly bonded (DB) SMI configurations. When Δd < 1.2 Å, the surface silanols are already close enough that minimal structural rearrangement is needed for one TMPS molecule to bond to both, resulting in moderate energy penalties. When Δd > 1.2 Å (corresponding to initial inter-silanol distances ≥4 Å), the silica framework must deform substantially to bring the oxygens into bonding distance, causing ΔE_elec to exceed 100 kJ/mol and making DB formation kinetically and thermodynamically unfavorable.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Greater separation between two singly bonded SMIs reduces steric repulsion between their substituents (propyl and methoxy groups), lowering the electronic energy and stabilizing the configuration.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_36_1f9e0529d34adda6c403150df151b32e21816537452767e5b795a9552cca5fb3.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/36/1f9e0529d34adda6c403150df151b32e21816537452767e5b795a9552cca5fb3","sample_id":"atomic-layer-deposition/simulation-usecase/36/1f9e0529d34adda6c403150df151b32e21816537452767e5b795a9552cca5fb3","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/1f9e0529d34adda6c403150df151b32e21816537452767e5b795a9552cca5fb3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/1f9e0529d34adda6c403150df151b32e21816537452767e5b795a9552cca5fb3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/Seunggi Seo et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":472,"height":378,"image_format":"jpeg","image_sha256":"342922fdd713dfe5d7afcd43fb4d6009622d1c21db17f16deef584a1c69852df","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":8,"width":162,"height":121},{"panel_id":"b","x":89,"y":124,"width":382,"height":254}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The inset presents a conceptual molecular rendering of trimethylaluminum (TMA) physisorbed on a self-assembled monolayer, emphasizing weak, reversible surface association rather than chemical incorporation.\"},{\"panel_id\":\"b\",\"text\":\"The main panel illustrates, at a conceptual level, how TMA molecular density above a SAM-coated surface differs under high- and low-pressure exposure conditions, highlighting pressure-dependent surface coverage behavior relevant to precursor dosing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The molecules are depicted as intact species resting near the SAM surface without any bond formation or ligand exchange. Their placement suggests proximity-driven association rather than incorporation into the surface. This visual treatment implies weak, reversible interaction characteristic of physisorption.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Chemical uniformity of the SAM surface.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Higher molecular density above the surface at high pressure\\n, -Greater spacing between molecules at low pressure\\n, -Increased near-surface crowding in the high-pressure region\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Low precursor pressure can lead to underexposure, particularly in regions with restricted transport. This may result in incomplete surface coverage and nonuniform film growth. The figure highlights why adequate pressure is needed to ensure consistent exposure.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_1.jpg","caption":"Figure 1. Sheet to sheet type reactor design for a two-step, spatial atomic layer deposition process. Reagents are continuously introduced in separate reaction zones, and a plate-shaped substrate is transported via a conveyor belt through each zone.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1011,"height":528,"image_format":"jpeg","image_sha256":"a0b8888d68d9c48efcc667489e5ff23de9b41b83f4a6d1c506131784f8d2231c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1011,"height":528}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A schematic of a sheet-to-sheet spatial atomic layer deposition reactor, showing separate reaction zones for different reagents and a conveyor belt transporting plate-shaped substrates to enable continuous, high-throughput deposition without lengthy purging steps.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Description|\\n|-----------|\\n|Sheet-to-sheet type reactor design for a two-step, spatial atomic layer deposition process. Reagents are continuously introduced in separate reaction zones, and a plate shaped substrate is transported via a conveyor belt through each zone|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Solar photovoltaic technology, Other rigid substrate applications in electronics and coatings\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The sheet-to-sheet configuration allows continuous substrate transport and avoids lengthy purging, making it more efficient for high-throughput deposition on rigid substrates compared to traditional roll-to-roll systems, which are primarily designed for flexible substrates.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the sheet-to-sheet spatial ALD reactor, reagents are introduced in separate reaction zones that are isolated by inert gases. The plate-shaped substrate is transported continuously via a conveyor belt through each zone, eliminating the need for lengthy purging steps between precursor exposures. This spatial separation allows the reactions to remain self-limiting while significantly increasing throughput.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Gas curtains are used to separate the reaction zones, preventing cross-contamination between different reagents.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_2.jpg","caption":"Figure 2. Diagram depicting the various length and time scales applicable for the multiscale modeling simulation, which is composed of mesoscopic and macroscopic modeling. Mesoscopic modeling is composed of ab initio quantum and statistical mechanics and the kinetic Monte Carlo method, and the macroscopic model consists of reactor modeling and computational fluid dynamics simulations. Prior work [49] has utilized machine learning or regression methods to determine optimal operating conditions to achieve high synergy.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_2","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1056,"height":745,"image_format":"jpeg","image_sha256":"3bfb232940bb21a7fe9a4bc45172f9628a84f1144f798f8f61dc2c24d162c2dc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1056,"height":745}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 2 presents a conceptual diagram of a multiscale modeling framework that connects mesoscopic simulations (ab initio quantum, statistical mechanics, kinetic Monte Carlo) with macroscopic simulations (reactor modeling and computational fluid dynamics). The framework captures multiple time and length scales and can integrate machine learning or regression methods to optimize operating conditions and achieve high synergy.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Description|\\n|-----------|\\n|Conceptual diagram showing the multiscale modeling approach, integrating mesoscopic simulations (ab initio quantum, statistical mechanics, kinetic Monte Carlo) with macroscopic simulations (reactor modeling and computational fluid dynamics). The framework links different time and length scales and can incorporate machine learning or regression methods to optimize operating conditions|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Machine learning methods, Regression analysis, Data-sharing programming methodologies\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. By combining mesoscopic and macroscopic simulations, the approach captures phenomena at multiple scales, providing more accurate and predictive modeling than relying solely on macroscopic simulations.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The framework links mesoscopic simulations, such as ab initio quantum calculations, statistical mechanics, and kinetic Monte Carlo, with macroscopic simulations like reactor modeling and computational fluid dynamics. This integration is achieved through a data-sharing methodology, allowing information from one scale to inform and guide simulations at another scale, enabling accurate predictions across different time and length scales.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ab initio quantum calculations, statistical mechanics, and the kinetic Monte Carlo (kMC) method.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_4.jpg","caption":"Figure 4. Kinetic Monte Carlo simulation on lattice diagram. For each reaction site, an identifiable number is allocated corresponding to a reaction if the selection condition of a certain reaction path is satisfied in Equation (6).","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_4","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1094,"height":378,"image_format":"jpeg","image_sha256":"15ba6ca26b7b3c7d7ac3fbcaecb106aaffc4b3fa933466f41fc913fb887bd378","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1094,"height":378}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Conceptual diagram of the kinetic Monte Carlo (kMC) simulation on a lattice, showing probabilistic assignment of reactions to 90,000 substrate sites based on weighted reaction rate constants. Time progression is determined by a secondary random number, and steric hindrance effects illustrate how bulky adsorbates affect neighboring site availability in the simulation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Site (row \\\\ column) | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |\\n| ------------------- | - | - | - | - | - | - | - | - | - | -- | -- | -- |\\n| 1 | 0 | 0 | 0 | 0 | 0 | 3 | 0 | 0 | 0 | 0 | 0 | 1 |\\n| 2 | 0 | 1 | 3 | 0 | 2 | 1 | 0 | 3 | 0 | 1 | 2 | 0 |\\n| 3 | 0 | 0 | 2 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 1 | 0 |\\n| 4 | 0 | 0 | 3 | 4 | 0 | 1 | 0 | 0 | 1 | 0 | 3 | 0 |\\n| 5 | 0 | 4 | 0 | 1 | 3 | 0 | 0 | 2 | 0 | 0 | 1 | 2 |\\n| 6 | 0 | 3 | 2 | 0 | 0 | 0 | 0 | 0 | 3 | 0 | 1 | 0 |\\n| 7 | 2 | 0 | 0 | 0 | 0 | 0 | 1 | 0 | 0 | 0 | 0 | 1 |\\n| 8 | 0 | 1 | 0 | 3 | 1 | 0 | 2 | 0 | 0 | 1 | 0 | 0 |\\n| 9 | 0 | 2 | 3 | 0 | 0 | 3 | 0 | 0 | 2 | 0 | 0 | 3 |\\n| 10 | 0 | 0 | 0 | 2 | 0 | 0 | 4 | 3 | 0 | 0 | 1 | 4 |\\n| 11 | 3 | 0 | 0 | 0 | 1 | 0 | 3 | 3 | 4 | 0 | 0 | 0 |\\n| 12 | 0 | 2 | 2 | 1 | 0 | 0 | 3 | 0 | 1 | 0 | 0 | 0 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Assign reaction sites on the lattice, Calculate total reaction rate (ktot) from possible reactions at each site, Randomly select a reaction using a weighted probability (g1 ∈ (0,1]), Determine time progression for the selected reaction using a secondary random number (g2 ∈ (0,1]), Apply steric hindrance rules to block neighboring sites as needed, Update the lattice to reflect adsorption and reaction outcomes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Including steric hindrance ensures that bulky adsorbates block neighboring sites, which better reflects actual surface kinetics and improves the predictive accuracy of adsorption behavior.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The kMC algorithm probabilistically assigns reactions to each substrate site based on weighted reaction rate constants. A random number (g1) is generated to select a reaction at each site, and a secondary random number (g2) determines the time progression before the next reaction occurs. The process accounts for steric hindrance, ensuring bulky adsorbates properly block adjacent sites, thereby reflecting realistic surface kinetics.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The lattice is 300 × 300, containing a total of 90,000 reaction sites.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_42_fig3.jpg","caption":"Fig.3 (a) Schematic diagram of the $\\mathsf{H}_2\\mathsf{O}$ -added sequence. (b) GPC change with respect to the $\\mathsf{H}_2\\mathsf{O}$ feeding time. (c) GPC change with respect to the $\\mathsf{H}_2\\mathsf{O}$ purge time at various $\\mathsf{H}_2\\mathsf{O}$ feeding times of (black) 3, (red) 5, and (blue) $10~\\mathrm{s}$ . (d) Deposited $\\mathsf{TiO_2}$ thin film thickness with respect to the conducting $\\mathsf{TiO_2}$ ALD cycle number by (black) the conventional sequence, and (red) the $\\mathsf{H}_2\\mathsf{O}$ -added sequence.","id":"train/atomic-layer-deposition/simulation-usecase/42/fig3","sample_id":"atomic-layer-deposition/simulation-usecase/42/fig3","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/Yeonchoo Cho et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":664,"height":622,"image_format":"jpeg","image_sha256":"d9b7bd8b099d27374b16a23fcf661d6567b60f8b46cf401dc4833d860d0a738f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":52,"y":7,"width":289,"height":272},{"panel_id":"b","x":351,"y":10,"width":312,"height":299},{"panel_id":"c","x":11,"y":314,"width":327,"height":301},{"panel_id":"d","x":354,"y":310,"width":308,"height":312}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_5_figure_1.jpg","caption":"Figure 1. Schematic representation of the area-selective ALD approach of $\\mathrm{ZnO}$ on an H-terminated amorphous Si layer. First, nanoscale patterns are defined by depositing a $\\mathrm{SiO}_2$ seed layer using EBID (patterning step 1). Next, $\\mathrm{ZnO}$ is deposited selectively on the activated areas (i.e., $\\mathrm{SiO}_2$ seed layer patterns) by area-selective ALD (building step 2). This ALD process consists of cycles of two alternating half-reactions: precursor dosing in pulse A and coreactant dosing in pulse B.","id":"train/atomic-layer-deposition/simulation-usecase/5/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/5/figure_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":664,"height":350,"image_format":"jpeg","image_sha256":"cdc9f7567de42f0358b0edbd686f27e87e2dc8da09f36debfebfdafc3a872898","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":74,"y":190,"width":514,"height":169},{"panel_id":"a","x":2,"y":7,"width":671,"height":183}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_54_ce4b85c2c05eb698fe6f1e4a630c87912516d299eb7c63ba511f48b14c78b28f.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/54/ce4b85c2c05eb698fe6f1e4a630c87912516d299eb7c63ba511f48b14c78b28f","sample_id":"atomic-layer-deposition/simulation-usecase/54/ce4b85c2c05eb698fe6f1e4a630c87912516d299eb7c63ba511f48b14c78b28f","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/ce4b85c2c05eb698fe6f1e4a630c87912516d299eb7c63ba511f48b14c78b28f.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/ce4b85c2c05eb698fe6f1e4a630c87912516d299eb7c63ba511f48b14c78b28f.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/Guoyong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":666,"height":289,"image_format":"jpeg","image_sha256":"5b8e5f872887553f59fd51abfbbea6b045a67f13ec68c6c4445435db84a03bce","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":4,"width":664,"height":282}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_54_figure_2.jpg","caption":"Figure 2. $\\mathrm{SiCl}_4$ half-reaction of $\\mathrm{SiO}_2$ ALD catalyzed by Lewis bases. Reprinted with permission from ref 21. Copyright 2012 American Chemical Society.","id":"train/atomic-layer-deposition/simulation-usecase/54/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/54/figure_2","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/Guoyong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":850,"height":559,"image_format":"jpeg","image_sha256":"d6e2fb79a8425b5ab1cb3a00e850feff5c05f609743a357ae5fd8a0e178eafe4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":1,"width":842,"height":554}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_54_figure_3.jpg","caption":"Figure 3. Schematic illustrations of (a) Berry pseudorotation and (b) surface pseudorotation. Reprinted with permission from ref 21. Copyright 2012 American Chemical Society.","id":"train/atomic-layer-deposition/simulation-usecase/54/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/54/figure_3","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/Guoyong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":669,"height":739,"image_format":"jpeg","image_sha256":"ef2d89d6e2388e511002505280b7c64a98e6656cb5ccbd3500239632474669e8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":5,"width":646,"height":245},{"panel_id":"b","x":1,"y":257,"width":665,"height":478}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_54_figure_8.jpg","caption":"Figure 8. Hybridization forms of an Al catalytic site of $\\mathrm{Al}_2\\mathrm{O}_3 / \\mathrm{SiO}_2$ nanolaminate RALD. Reprinted with permission from ref 29. Copyright 2013 Royal Society of Chemistry.","id":"train/atomic-layer-deposition/simulation-usecase/54/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/54/figure_8","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/Guoyong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":639,"height":261,"image_format":"jpeg","image_sha256":"0ee3649c42298bd98a0f1ddcee3c21c8c142300e66392f12312f50b367209872","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":633,"height":258}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_57_804392671053c3d965a6c80fa3f03a740d8c6c1d639eb6cf747e8301533be1bb.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/57/804392671053c3d965a6c80fa3f03a740d8c6c1d639eb6cf747e8301533be1bb","sample_id":"atomic-layer-deposition/simulation-usecase/57/804392671053c3d965a6c80fa3f03a740d8c6c1d639eb6cf747e8301533be1bb","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/804392671053c3d965a6c80fa3f03a740d8c6c1d639eb6cf747e8301533be1bb.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/804392671053c3d965a6c80fa3f03a740d8c6c1d639eb6cf747e8301533be1bb.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/C. Goehry et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":541,"height":380,"image_format":"jpeg","image_sha256":"2cdc5dad140438c08b44d092716d9a32ba3f8d28c70123572f6c2ff90750bc2c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":8,"width":534,"height":372}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_6_figure_3.jpg","caption":"Figure 3. Schematic of common growth modes in ALD: (a) Volmer-Weber; (b) Frank-van der Merwe; and (c) Stranski-Krastanov.","id":"train/atomic-layer-deposition/simulation-usecase/6/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/6/figure_3","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":972,"height":205,"image_format":"jpeg","image_sha256":"10a1b69eba7ff7dc53aa82a47e05379967c235b7974bb5a8305cb8cdb4290356","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":680,"y":9,"width":289,"height":198},{"panel_id":"b","x":329,"y":8,"width":320,"height":197},{"panel_id":"a","x":4,"y":3,"width":294,"height":202}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image depicts the Volmer-Weber growth mechanism.\"},{\"panel_id\":\"b\",\"text\":\"The image depicts the Frank-van der Merwe growth mechanism.\"},{\"panel_id\":\"c\",\"text\":\"The image depicts the Stranski-Krastanov growth mechanism.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This method is mostly used for the fabrication of quantum dots.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This growth mode is extremely suitable for high uniformity for extremely thin films as the full substrate is covered already after a single cycle.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A different name of this growth mode is island growth, as the growth areas are islands of material.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This growth mode will not lead to fast uniform layers as the islands will first grow vertically.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_9_figure_2.jpg","caption":"Figure 2. Top view of ideal configuration. Several $\\mathrm{HfO_2}$ cubes are deposited on the substrate with an ideal agreement of cell. A two-dimensional cell is identified where there should not be any ambiguity between atom species and locations.","id":"train/atomic-layer-deposition/simulation-usecase/9/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/9/figure_2","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/A. Dkhissi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":667,"height":506,"image_format":"jpeg","image_sha256":"af0969919581e5b9a543d039dad18080be5aa1ee5b5233399dfd23d7aff0bfc2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":5,"width":661,"height":500}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a top-view schematic of an ideal HfO₂ structure placed on a Si/SiO₂ substrate. Different symbols are used to mark atom types and their layer positions. Silicon atoms appear only in the first layer, while hafnium atoms are placed in alternating positions depending on whether the layer number is even or odd. Ionic oxygen positions are also marked to show local bonding sites. The dashed square highlights one repeating two-dimensional cell where atom types and positions are clearly defined. This layout is used to remove confusion when building models or simulations of HfO₂ growth on silicon.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A repeating two-dimensional unit cell.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Silicon atoms (represented by inverted white triangles) appear exclusively in the k = 1 layer.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Building simulation input structures\\n, -Defining atomic positions clearly\\n, -Avoiding ambiguity in lattice models\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The highlighted unit cell shows the smallest repeating part of the lattice. Once this cell is defined, the full structure can be built by repeating it in two dimensions. This makes the structure easier to understand, copy, and use in calculations without redefining every atom manually.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_9_figure_4.jpg","caption":"Figure 4. Connection between the atomic model of configuration and the substrate.","id":"train/atomic-layer-deposition/simulation-usecase/9/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/9/figure_4","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/A. Dkhissi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":667,"height":456,"image_format":"jpeg","image_sha256":"39a77fdcee94744c064d7a69730e37146636fb5877444e617866ff7f1bf5aeaa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":662,"height":452}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a top-view schematic that explains how an oxide atomic model connects to a silicon substrate. Different symbols represent silicon, hafnium, oxygen, and ionic oxygen atoms arranged on a regular grid defined by the i and j directions. The dashed shape marks a single two-dimensional cell that repeats across the surface. This layout helps define clear atom positions and avoids confusion between species when building simulation models for oxide growth on silicon.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Silicon atoms.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Keeps atom positions clear\\n, -Avoids mixing atom types\\n, -Supports periodic boundary setup\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Each atom type plays a different role in bonding and stability. Clear separation avoids wrong bonds and helps the model reflect how oxide layers actually connect to the silicon surface during early growth.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The diagram shows that not all surface sites are identical. Some areas have different local bonding options, which can lead to uneven nucleation. This helps explain why early growth may vary before the surface becomes fully covered.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_11_91ed15720c14d19c8e5203b7deeae70f372025882dbfcb676c5ac98e8cf273da.jpg","caption":"","id":"train/atomic-layer-etching/experimental-usecase/11/91ed15720c14d19c8e5203b7deeae70f372025882dbfcb676c5ac98e8cf273da","sample_id":"atomic-layer-etching/experimental-usecase/11/91ed15720c14d19c8e5203b7deeae70f372025882dbfcb676c5ac98e8cf273da","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/91ed15720c14d19c8e5203b7deeae70f372025882dbfcb676c5ac98e8cf273da.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/91ed15720c14d19c8e5203b7deeae70f372025882dbfcb676c5ac98e8cf273da.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plasma.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":466,"height":378,"image_format":"jpeg","image_sha256":"2c0e48f9599979fa3d5aa949bfe678c97f02a700acfadaa1dce5c00c1de2ccac","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":5,"y":9,"width":459,"height":159},{"panel_id":"a","x":8,"y":175,"width":455,"height":202}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_11_figure_1.jpg","caption":"Figure 1. Schematic overview of several approaches for ALE categorized into anisotropic and plasma-based; isotropic and plasma-based; and isotropic and purely thermally driven. Anisotropic ALE can be obtained by employing (a) plasma radical-driven reaction to modify the material surface (half-reaction A) and plasma-generated ions or neutral beams to directionally remove the modified layer (B); (b) thermochemical reaction to modify the material surface (A) and plasma-generated ions or neutral beams to directionally remove the modified layer (B). Isotropic ALE can be obtained using (c) thermochemical reaction to remove the material, while surface modification takes place (A), and a radical-driven plasma step to reset the surface (B); (d) plasma radical-driven reaction to modify the material surface (A) and a thermal annealing step to desorb the modified layer (B); (e) thermochemical reaction to modify the surface (A) and a second thermochemical reaction to remove the modified surface layer (B); or (f) thermochemical reaction to modify the surface (A) and a thermal annealing step to desorb the modified layer (B). Examples of the approaches are given in refs 11, 13, 14 for (a); ref 24 for (b); this work for (c); refs 18, 20, 31 for (d); refs 13, 16 for (e); and ref 32 for (f).","id":"train/atomic-layer-etching/experimental-usecase/11/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/11/figure_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"},{"panel_id":"d","label":"conceptual diagram"},{"panel_id":"e","label":"conceptual diagram"},{"panel_id":"f","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plasma.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":447,"height":1142,"image_format":"jpeg","image_sha256":"0ecb3d332f96da0ec1c6be374bcf7a379989829d8ce5a92387d38539e093df67","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"d","x":13,"y":617,"width":421,"height":173},{"panel_id":"b","x":26,"y":226,"width":393,"height":177},{"panel_id":"c","x":13,"y":435,"width":444,"height":159},{"panel_id":"e","x":13,"y":802,"width":440,"height":172},{"panel_id":"f","x":18,"y":974,"width":425,"height":167},{"panel_id":"a","x":19,"y":56,"width":408,"height":178}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_1.jpg","caption":"Figure 1. Schematic of ALE process based on sequential surface modification and volatile release reactions.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":661,"height":464,"image_format":"jpeg","image_sha256":"26d5a0db30108b887ad54c63cc8583dd0cb8869e1de7b0db1127b23a6cdb3ac8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":12,"width":648,"height":444}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_17.jpg","caption":"Figure 17. Schematic of SiN ALE using surface modifying hydrofluorocarbon plasma and thermal annealing. Reproduced with permission from ref 48. Copyright 2017 IOP Publishing.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_17","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_17","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_17.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_17.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":666,"height":195,"image_format":"jpeg","image_sha256":"feead40cb0ee58f34b989f893fe9f16945216b3ef7bb448e219637c71f7b62a2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":656,"height":192}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_3.jpg","caption":"Figure 3. Ligand-exchange reaction between $\\mathrm{AlF}_3$ and $\\mathrm{Al(CH}_3\\mathrm{)}_3$ . Reproduced with permission from ref 9. Copyright 2016 American Chemical Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_3","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":669,"height":261,"image_format":"jpeg","image_sha256":"36a2f56c613a2c6372c805efb9a70415f89dc3d4fbca2968d7c98f6ea7471d0f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":7,"width":665,"height":255}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_7.jpg","caption":"Figure 7. Schematic for $\\mathrm{ZnO}$ ALE using HF and TMA as reactants. TMA removes $\\mathrm{AlF}_3$ layer by ligand-exchange and then converts the surface of underlying $\\mathrm{ZnO}$ to an $\\mathrm{Al}_2\\mathrm{O}_3$ surface layer. Reproduced with permission from ref 30. Copyright 2017 American Chemical Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_7","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":669,"height":394,"image_format":"jpeg","image_sha256":"765cb92be482e5ca2d7bf33a4fcdf52b316383c25fc4590d190f85bce1f367e7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":3,"y":212,"width":665,"height":183},{"panel_id":"a","x":3,"y":21,"width":664,"height":177}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_2_ed4c292f633e74087a929d148bb49e4ae40cf8161b32264c5c29870d55832259.jpg","caption":"Figre3. t t the steps (b) through (f) will be repeated. The overall etch depth is produced by $n$ ALE cycles.","id":"train/atomic-layer-etching/experimental-usecase/2/ed4c292f633e74087a929d148bb49e4ae40cf8161b32264c5c29870d55832259","sample_id":"atomic-layer-etching/experimental-usecase/2/ed4c292f633e74087a929d148bb49e4ae40cf8161b32264c5c29870d55832259","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"},{"panel_id":"d","label":"conceptual diagram"},{"panel_id":"e","label":"conceptual diagram"},{"panel_id":"f","label":"conceptual diagram"},{"panel_id":"g","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/ed4c292f633e74087a929d148bb49e4ae40cf8161b32264c5c29870d55832259.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/ed4c292f633e74087a929d148bb49e4ae40cf8161b32264c5c29870d55832259.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/Atomic Layer Etching at the Tipping Point An Overview.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1002,"height":364,"image_format":"jpeg","image_sha256":"2695f595af401b7b053cc92c577d1ae15a88ec1d848b78b5d66714c088ab2dce","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":16,"y":19,"width":139,"height":299},{"panel_id":"b","x":178,"y":21,"width":153,"height":293},{"panel_id":"c","x":339,"y":90,"width":75,"height":248},{"panel_id":"d","x":421,"y":92,"width":164,"height":218},{"panel_id":"e","x":768,"y":45,"width":223,"height":289},{"panel_id":"f","x":763,"y":70,"width":72,"height":264},{"panel_id":"g","x":846,"y":129,"width":138,"height":186}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This panel shows the initial clean substrate surface with available reactive sites prior to any precursor exposure, representing the starting state of the plasma-enhanced atomic layer etching or deposition cycle.\"},{\"panel_id\":\"b\",\"text\":\"In this panel, precursor molecules are introduced and adsorb onto the substrate surface, forming a chemisorbed layer through self-limiting surface reactions.\"},{\"panel_id\":\"c\",\"text\":\"This panel illustrates the purge step following precursor exposure, during which excess and weakly bound precursor molecules are removed from the chamber, leaving only the adsorbed surface layer.\"},{\"panel_id\":\"d\",\"text\":\"Here, a saturated adsorbed layer uniformly covers the substrate surface, indicating completion of the precursor adsorption step and readiness for activation.\"},{\"panel_id\":\"e\",\"text\":\"This panel depicts low-energy ion bombardment during plasma exposure, which selectively activates surface reactions by removing or modifying the adsorbed layer through ion-assisted processes.\"},{\"panel_id\":\"f\",\"text\":\"In this panel, a second purge step removes reaction byproducts and desorbed species generated during ion activation, preventing gas-phase reactions.\"},{\"panel_id\":\"g\",\"text\":\"The final panel shows the substrate after completion of one full cycle, with the surface reset for the next cycle and a controlled, layer-by-layer material modification achieved.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE cycle enables precise, angstrom-level control over material removal while minimizing ion-induced damage. This level of control is essential for fabricating nanoscale semiconductor devices, high-aspect-ratio structures, and other applications where conventional etching methods lack sufficient precision.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ALE removes material in discrete, self-limiting cycles, unlike continuous plasma etching.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Atomic-scale etch depth control, Reduced surface damage, Improved etch uniformity\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_2_figure_1.jpg","caption":"Figure 1. Schematic of one cycle of a typical ALD process to produce thin $\\mathrm{Al}_2\\mathrm{O}_3$ layers (redrawn after Potts and Kessels $^{37}$ ). The surface modification step ((b)-(d)) is based on self-limited adsorption of a reactive precursor, followed by pump-out. The steps ((e)-(f)) involve exposure to an oxidizing gas, e.g. water, $\\mathrm{O}_2$ plasma, etc, followed by pump-out and transform the precursor layer into roughly a monolayer of the final $\\mathrm{Al}_2\\mathrm{O}_3$ material. For the substrate (g) obtained after one ALD cycle, the steps (b) through (f) will be repeated. The overall deposited layer thickness is produced by $n$ ALD cycles.","id":"train/atomic-layer-etching/experimental-usecase/2/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/2/figure_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"},{"panel_id":"d","label":"conceptual diagram"},{"panel_id":"e","label":"conceptual diagram"},{"panel_id":"f","label":"conceptual diagram"},{"panel_id":"g","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/Atomic Layer Etching at the Tipping Point An Overview.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1003,"height":422,"image_format":"jpeg","image_sha256":"59612883ee7510a45a287eff667f4b158aaf75684da9ab8f053fe670f38b0d16","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":13,"y":96,"width":135,"height":321},{"panel_id":"b","x":151,"y":22,"width":194,"height":398},{"panel_id":"c","x":338,"y":171,"width":82,"height":209},{"panel_id":"d","x":421,"y":34,"width":163,"height":337},{"panel_id":"e","x":585,"y":13,"width":179,"height":363},{"panel_id":"f","x":767,"y":178,"width":69,"height":197},{"panel_id":"g","x":848,"y":164,"width":136,"height":231}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This panel shows the initial hydroxyl-terminated substrate surface, where surface –OH groups act as reactive sites for precursor adsorption at the beginning of the ALD cycle.\"},{\"panel_id\":\"b\",\"text\":\"In this panel, precursor molecules containing –CH₃ ligands are introduced and react with surface –OH groups until saturation is reached, forming a chemisorbed layer and releasing reaction byproducts.\"},{\"panel_id\":\"c\",\"text\":\"This panel illustrates the purge step after precursor exposure, during which excess precursor molecules and gaseous byproducts are removed, leaving a stable adsorbed layer on the surface.\"},{\"panel_id\":\"d\",\"text\":\"Here, a uniformly saturated adsorbed precursor layer is shown on the substrate, indicating completion of the self-limiting adsorption step.\"},{\"panel_id\":\"e\",\"text\":\"This panel depicts exposure of the adsorbed layer to a reactive plasma gas, where energetic species react with the surface-bound ligands until saturation, converting the adsorbed layer into the desired solid material.\"},{\"panel_id\":\"f\",\"text\":\"In this panel, a second purge step removes residual reactive gas species and reaction byproducts formed during plasma exposure, preventing undesired gas-phase reactions.\"},{\"panel_id\":\"g\",\"text\":\"The final panel shows the regenerated surface with new –OH termination, ready for the next ALD cycle, demonstrating controlled layer-by-layer film growth.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Because ALD reactions are self-limiting and occur only at the surface, precursor molecules react uniformly wherever they reach, regardless of feature geometry. Purge steps prevent gas-phase reactions, allowing each cycle to deposit a controlled amount of material. This ensures excellent conformality and precise thickness control in complex three-dimensional structures.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The growth per cycle remains constant and does not increase further.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Reactive surface functional groups (e.g., –OH), Self-limiting chemisorption of precursor molecules, Complete purging between exposure steps, Regeneration of reactive surface sites after oxidation\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_2_figure_2.jpg","caption":"Figure 2. Schematic illustrating the thermal \"ALD window\" concept (redrawn after George $^{29}$ ).","id":"train/atomic-layer-etching/experimental-usecase/2/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/2/figure_2","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/Atomic Layer Etching at the Tipping Point An Overview.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":669,"height":294,"image_format":"jpeg","image_sha256":"c490cc04bea0743d43309d749d633d80353f41f96faee3021974192ebd11e086","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":294}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure schematically illustrates the thermal ALD window, showing how thickness growth per cycle depends on process temperature. In the central ALD window, surface reactions are self-limiting and yield constant growth per cycle. At low temperatures, condensation and incomplete reactions dominate, while at high temperatures, desorption and precursor decomposition lead to loss of ALD control.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Identifying the ALD window is critical because it defines the operating conditions where film growth is stable, uniform, and self-limiting. Operating within this window ensures reproducible material properties and precise thickness control, which are essential for semiconductor manufacturing and for extending ALD principles to atomic layer etching processes.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Growth per cycle becomes unstable due to condensation at low temperatures and decomposition or desorption at high temperatures.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Uniform monolayer-by-monolayer growth, Precise thickness control, High conformality, Reproducible film structure\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_2_figure_4.jpg","caption":"Figure 4. Schematic illustrating the concept of an \"ALE window\" located between the spontaneous chemical etching and the physical sputtering regimes. The presence of chemical reactant on the substrate surface enables directional etching of the material in a window of ion energies above the chemically enhanced etching energy threshold $E_{\\text{ceth}}$ and below the physical sputtering energy threshold $E_{\\text{psth}}$ , respectively. Spontaneous chemical etching of the reactant/substrate system interferes with this approach and is made negligible by reducing the temperature of the substrate sufficiently.","id":"train/atomic-layer-etching/experimental-usecase/2/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/2/figure_4","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/Atomic Layer Etching at the Tipping Point An Overview.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":675,"height":272,"image_format":"jpeg","image_sha256":"22b7e8ada940ed122ec3d78d4caa2ac7354ff99085634c97da70ed817592d5aa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":272}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure schematically illustrates the ALE window as a function of ion energy, positioned between spontaneous chemical etching at low ion energies and physical sputter etching at high ion energies. Within this window, chemically enhanced, directional etching occurs when the ion energy is above the chemical etching threshold (E₍etch₎) but below the physical sputtering threshold (E₍psh₎), enabling controlled atomic-scale material removal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Operating within the ALE window allows controlled, directional material removal by combining chemical surface modification with low-energy ion activation. This prevents uncontrolled chemical etching and excessive physical sputtering, enabling precise atomic-scale etching required for advanced semiconductor and nanofabrication applications.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Etching transitions from spontaneous chemical etching at low ion energy to physical sputter etching at high ion energy, with ALE occurring in between.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Directional etching, Atomic-scale thickness control, Chemically enhanced etching, Suppressed physical sputtering\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_2_figure_5.jpg","caption":"Figure 5. Schematic illustration of the dependence of etched thickness per cycle on exposure time for different pressures (i) - lowest pressure, (ii) - intermediate and (iii) - highest) and assuming negligible spontaneous etching. Self-limitation requires saturation surface coverage which at the highest pressure (iii) is achieved after the shortest exposure time. Alternatively, a plasma and production of radicals may be used to reduce the time required to achieve saturation surface coverage.","id":"train/atomic-layer-etching/experimental-usecase/2/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/2/figure_5","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/Atomic Layer Etching at the Tipping Point An Overview.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":675,"height":347,"image_format":"jpeg","image_sha256":"34f47ded781eb03dac56720c69d261f62202572b80c9468a1903d30b62363179","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":347}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure schematically illustrates the dependence of etched thickness per cycle on reactant exposure time under different reactant pressures. Curves (i), (ii), and (iii) represent increasing pressure conditions, showing that higher pressure leads to faster attainment of saturation surface coverage, which is required for self-limiting atomic layer etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Exposure Time of Substrate to Chemical Reactant | Thickness Loss Per Cycle |\\n|---|---|\\n|(i)| Saturation coverage |\\n|(ii)| | \\n|(iii)| |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Rapid achievement of saturation surface coverage reduces the required exposure time per cycle, improving process efficiency while maintaining atomic-scale etch control. This is particularly important for high-throughput manufacturing where precise, repeatable etching is required.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher reactant pressure leads to faster attainment of saturation surface coverage.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Constant etched thickness per cycle, Uniform surface modification, Self-limited reaction behavior\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_26_fig_1.jpg","caption":"Fig. 1. (a) Cross section schematic of the GaN FEG-HEMTs grown on (111) Si substrate. (b) Ferroelectric gate stack structure.","id":"train/atomic-layer-etching/experimental-usecase/26/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/26/fig_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/A Normally-Off GaN MIS-HEMT Fabricated.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":572,"height":211,"image_format":"jpeg","image_sha256":"4578fd02ee7b6904f558f6f3ee66735b95d7290d5aa0049c27871ae027d6c5f1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":310,"y":5,"width":261,"height":205},{"panel_id":"a","x":0,"y":3,"width":298,"height":207}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_29_fig_6.jpg","caption":"FIG. 6. NBE signal intensities of etched AlGaN/GaN with and without quartz windows: (a) sample setup, (b) NBE signal intensity of AlGaN, and (c) NBE signal intensity of GaN.","id":"train/atomic-layer-etching/experimental-usecase/29/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/29/fig_6","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"bar chart"},{"panel_id":"c","label":"bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/Atomic layer etching of AlGaN using Cl2 and Ar gas.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":539,"height":1142,"image_format":"jpeg","image_sha256":"e69db7d4194ab890b789303e0c76e3bdebb7f54a3fbc82d964b7535c78e844ea","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":0,"y":783,"width":536,"height":359},{"panel_id":"b","x":0,"y":372,"width":539,"height":376},{"panel_id":"a","x":3,"y":45,"width":533,"height":291}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The diagram shows the different device stacks with and without quartz windows, including the different effects of different plasma species.\"},{\"panel_id\":\"b\",\"text\":\"The bar chart compares the NBE signal intensity across three conditions: initial state, with quartz window (QW), and without quartz window.\"},{\"panel_id\":\"c\",\"text\":\"The bar chart compares the NBE signal intensity across three conditions: initial state, with quartz window (QW), and without quartz window.\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"|Class| NBE Signal Intensity (a.u.) | \\n|---|---|\\n| Initial | 1.0 |\\n|w/ QW |0.7|\\n|w/o QW |0.15|\"},{\"panel_id\":\"c\",\"text\":\"|Class| NBE Signal Intensity (a.u.) | \\n|---|---|\\n| Initial | 1.0 |\\n|w/ QW |0.65|\\n|w/o QW |0.5|\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The photons penetrate deeper into the GaN, therefore affecting it more.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The UV photons fully pass through the AlGaN layer in both cases.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ions have directional velocity towards the substrate resulting in a penetration depth. Radicals do not have this directional character and just react at the top surface.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The photons penetrate deeper as the quartz window does not longer absorb some of them, however the window likely absorbs less than the AlGaN/GaN stack.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_33_fig1.jpg","caption":"FIG.1. Overview of thermal ALE of TiN films consisting of native oxide removal and the formation and desorption of a surface-modified layer. A $\\mathrm{Cl}_2 / \\mathrm{Ar}$ downstream plasma is used for the surface modification, and the modified layer is removed by IR annealing.","id":"train/atomic-layer-etching/experimental-usecase/33/fig1","sample_id":"atomic-layer-etching/experimental-usecase/33/fig1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/Atomic layer etching of titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":664,"height":620,"image_format":"jpeg","image_sha256":"c82b0c88cbf702e83228e396b993d37ce57cd581ceb88829de8084ac2dec4586","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":281,"width":663,"height":336},{"panel_id":"a","x":0,"y":4,"width":403,"height":265}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a process involving TiN surface modification through HF exposure with IR annealing.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows a step-by-step process of surface modification and desorption of TiN using Cl2 plasma treatment resulting in a surface-modified layer that undergoes desorption upon IR annealing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that the Cl2 plasma modifies more than a monolayer, this can later be seen with EPC data.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A possible species could be TiCl4, which is also used in some processes as a precursor gas.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is likely that the IR radiation penetrates into the TiN film.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The HF exposure with IR annealing is selective for TiO2 as no TiN is removed upon exposure.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_33_fig_11.jpg","caption":"FIG. 11. Proposed mechanism of ALE for TiN films involving the formation and desorption of a $\\mathsf{TIC}_{\\mathsf{X}}$ based surface-modified layer.","id":"train/atomic-layer-etching/experimental-usecase/33/fig_11","sample_id":"atomic-layer-etching/experimental-usecase/33/fig_11","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/Atomic layer etching of titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":669,"height":461,"image_format":"jpeg","image_sha256":"297d343d4b54bb4e04d99e45a802181faa239336d69eb4a51b814082a6374200","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":668,"height":460}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a proposed etch process of TiN with Cl radicals and IR annealing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows the removal of 3 monolayers.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The oxygen can come from impurities in the film that were formed during deposition.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Between all the given images a purge step is likely added to remove species from the gas phase.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The IR annealing provides the required energy to TiCl4 species to become volatile and desorb from the surface.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_11.jpg","caption":"Fig. 11. Schematic flow of the cyclic $\\mathrm{C_4F_8}$ and $\\mathrm{O_2}$ plasma etching mechanism. (a) The $\\mathrm{C_4F_8}$ plasma modified the surface of the $\\mathrm{TiO_2}$ . (b) CF polymer formed on the modified surface. $\\mathrm{O_2}$ plasma etched (c) the CF polymer and then (d) the modified layer.","id":"train/atomic-layer-etching/experimental-usecase/36/fig_11","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_11","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1203,"height":473,"image_format":"jpeg","image_sha256":"f15e99ae66d4d7ca574a84ca0e6623e29150a24bd80705b70df40480ba44b0b6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":1200,"height":467}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_38_58930c318f0c9c1269db894d23541de4e2601ecd4dd5080cc8bd7171457d9036.jpg","caption":"","id":"train/atomic-layer-etching/experimental-usecase/38/58930c318f0c9c1269db894d23541de4e2601ecd4dd5080cc8bd7171457d9036","sample_id":"atomic-layer-etching/experimental-usecase/38/58930c318f0c9c1269db894d23541de4e2601ecd4dd5080cc8bd7171457d9036","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/58930c318f0c9c1269db894d23541de4e2601ecd4dd5080cc8bd7171457d9036.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/58930c318f0c9c1269db894d23541de4e2601ecd4dd5080cc8bd7171457d9036.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/High synergy atomic layer etching of AlGaNGaN.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":666,"height":331,"image_format":"jpeg","image_sha256":"ae261a9c70bf29e014b23226cde6353e7c06f544bc8442f5d75ab245616ae36a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":665,"height":325}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_39_fig1.jpg","caption":"FIG.1. (a)(d) ALE process for MgO-doped LN. (a) A hydrogen plasma exposure leads to (b) a hydrogen-rich modified layer at the top of the sample. (c) A subsequent $\\mathsf{SF}_6 / \\mathsf{Ar}$ plasma exposure yields volatile species. (d) A final purge completes the cycle. (e) Microscope image ( $10\\times$ magnification) of the developed lithography pattern on the LN wafer. The dotted line indicates the direction of AFM scan for etch depth measurements.","id":"train/atomic-layer-etching/experimental-usecase/39/fig1","sample_id":"atomic-layer-etching/experimental-usecase/39/fig1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"},{"panel_id":"d","label":"conceptual diagram"},{"panel_id":"e","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/images/fig1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/Isotropic atomic layer etching of MgO-doped lithium niobate.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1081,"height":358,"image_format":"jpeg","image_sha256":"636c326c1fcb5cb458cf257fd90ad8c0488c7b3b590548937767947fd2349e5c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":54,"y":15,"width":227,"height":161},{"panel_id":"b","x":357,"y":18,"width":222,"height":160},{"panel_id":"c","x":51,"y":207,"width":224,"height":149},{"panel_id":"d","x":354,"y":218,"width":226,"height":134},{"panel_id":"e","x":701,"y":42,"width":377,"height":310}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Conceptual schematic of the H₂ plasma exposure step initiating the ALE cycle on MgO-doped LN.\"},{\"panel_id\":\"b\",\"text\":\"Conceptual schematic of the purge step following H₂ plasma exposure, resulting in a hydrogen-modified surface layer.\"},{\"panel_id\":\"c\",\"text\":\"Conceptual schematic of the SF₆/Ar plasma exposure step, which the caption indicates produces volatile reaction species.\"},{\"panel_id\":\"d\",\"text\":\"Conceptual schematic of the final purge step completing one ALE cycle.\"},{\"panel_id\":\"e\",\"text\":\"Optical microscope image (10× magnification) showing the developed lithography pattern on the LN wafer, with a 400 µm scale bar and an indicated AFM scan direction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plasma exposure in subfigure (a) uses H₂ and is described as creating a hydrogen-rich modified surface layer. In contrast, subfigure (c) shows SF₆/Ar plasma exposure, which the caption states yields volatile species. The two steps therefore employ different gas chemistries and serve different roles within the ALE cycle.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A developed lithography pattern on the LN wafer.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A purge step following H₂ plasma exposure.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_7_figure_1.jpg","caption":"Figure 1. Several approaches can be adopted for thin film deposition and etching for vapor phase based techniques. (a) In a continuous process, the process A is started at $t = 0$ and stopped after the deposited or etched thickness has been reached. In this basic approach, the control of the deposited or etched thickness is limited as the deposited or etched thickness is \"flux-controlled\". Variations in the process conditions easily lead to variations in the flux of species and hence, in the final deposited or etched thickness, both over multiple deposition runs (i.e., wafer-to-wafer) or over the substrate area (i.e., within-wafer). (b) In a pulsed process, the continuous process is basically divided up into pulses and the pulses are repeated until the deposited or etched thickness has been reached. When the pulse length is well-defined, pulsing provides typically additional control over the continuous process but due to the flux-controlled nature similar drawbacks as in the continuous process hold. (c) Atomic layer processes are \"surface-controlled\" as they are based on self-limiting surface chemistries during, e.g., two half-reactions (A and B) that make up a full cycle. Every cycle yields a well-defined, fixed thickness that is deposited or etched when the time per cycle for the half-cycles is sufficiently long (i.e., when working in \"saturated conditions\"). This means that the thickness of the deposited or etched film can be controlled very accurately by choosing the right number of cycles. This holds when comparing one deposition run to another but it also leads to an excellent uniformity over the full substrate. Ideal atomic layer processes are very independent of variations in timings or process conditions.","id":"train/atomic-layer-etching/experimental-usecase/7/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/7/figure_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/Atomic Layer Etching What CanWe Learn from Atomic Layer Deposition.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1075,"height":684,"image_format":"jpeg","image_sha256":"f228398b2d3583a05ee02d72ea56dfc19617d4e852f020ac2793185bb0f0f57d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":758,"y":33,"width":305,"height":636},{"panel_id":"b","x":407,"y":30,"width":315,"height":639},{"panel_id":"a","x":30,"y":28,"width":315,"height":626}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The continuous process diagram shows thickness increasing with time during constant exposure to process A. Because the process is flux-controlled, small changes in gas flow or conditions can strongly affect the final thickness.\"},{\"panel_id\":\"b\",\"text\":\"The pulsed process diagram shows that exposure to process A is divided into repeated pulses. This gives better timing control than a continuous process, but the thickness per pulse still depends on how much material arrives at the surface.\"},{\"panel_id\":\"c\",\"text\":\"The atomic layer process diagram shows alternating A and B steps that react only with the surface. Once each step is saturated, every cycle adds the same fixed amount of material, allowing very accurate thickness control by counting cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In continuous processes, the total deposited or etched thickness is directly proportional to the integral of the precursor flux over time. Any fluctuation in process parameters like flow rate, pressure, or temperature immediately changes this flux and, consequently, the instantaneous growth or etch rate. Since there is no self-limiting step to cap the reaction, these variations accumulate directly, leading to poor control over the final thickness and non-uniformity.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-In both cases, thickness increases in a linear way.\\n-Both processes are controlled by precursor flux reaching the surface.\\n-Pulsing improves timing control but does not remove flux dependence.\\n-Variations in gas delivery still affect final thickness in both cases.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It shows that each half-reaction reaches saturation, so growth depends on surface reactions rather than precursor flux.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In atomic layer processes, each cycle deposits or removes a fixed amount of material once the surface is saturated. This makes the result insensitive to small changes in gas flow, pressure, or timing. Because every surface site reacts in the same way, thickness remains uniform across the wafer and from run to run.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_7_figure_4.jpg","caption":"Figure 4. Schmatic ilstration of the key feures for (a) atomic layer etching (ALEt) and (b) atomic laye deposition (ALD). The proceses yield a precise control of the thickes chd (ch conol) d ostid gow control) per cly for A and LD, reectively. The ater holds for the ustrate surface such that the unforty is excelent. When processing a subtrate with thre-dimsonal feures, the situation for AEt and ALD is however diffeent. For ALD, the coverage of thre-dimsonal feures is simiar thoghout the feures and comparable to the planar surface, hce the conformality of ALD-preared films is exellnt. For etching proceses such as ALEt, there is generally interest in etching vertical feares which requires anisotropic proceses in which only material is removed from the bottom of the vertical feature. In other cases, isotropic etching can be desired. In this case, the material should be etched equally on all exposed surfaces, indednt of the otion of the local sence on the subtrate. For ALEt, alo the selectivity of the etch process is key. Idally, only the to-be-etched material should be removed and not masking materials or materials lying underneath the to-be-etched material.","id":"train/atomic-layer-etching/experimental-usecase/7/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/7/figure_4","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/Atomic Layer Etching What CanWe Learn from Atomic Layer Deposition.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1084,"height":728,"image_format":"jpeg","image_sha256":"d3183e4f6c0ed60f546177343f5c4c49f0084b98f3086da20accf13e6f75b342","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":13,"y":8,"width":1066,"height":410},{"panel_id":"a","x":13,"y":8,"width":1066,"height":410}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The schematic illustrates how ALEt enables atomic-layer-controlled removal while emphasizing selectivity and directional behavior. Anisotropic ALEt removes material preferentially from horizontal surfaces, whereas isotropic ALEt removes material uniformly from all exposed surfaces. Uniformity and etch control are highlighted as key outcomes of the layer-by-layer, surface-limited process.\"},{\"panel_id\":\"b\",\"text\":\"The ALD schematic shows atomic-layer addition with excellent uniformity on planar substrates and high conformality inside three-dimensional structures. Because ALD relies on self-limiting surface chemistry, growth per cycle remains consistent across the feature geometry, enabling precise thickness control and uniform coverage of high-aspect-ratio structures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Planar surfaces show uniform material addition due to self-limiting adsorption.\\n-Sidewalls and bottom surfaces of recessed features receive comparable dose and achieve the same growth per cycle.\\n-Overall conformality is preserved across the entire geometry, yielding uniform thickness independent of feature depth.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ALD conformality allows uniform coating of sidewalls and bottoms of deep features. This prevents thinning or void formation in recessed regions. Such coverage is critical for reliable electrical and mechanical performance in advanced devices.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Horizontal surfaces undergo enhanced removal during anisotropic ALEt because the activation step is directionally biased, whereas isotropic ALEt removes material at similar rates on both horizontal and vertical surfaces.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Selectivity ensures that only the intended material is removed during etching. This protects masking layers and underlying films from unintended damage. High selectivity is essential for maintaining device integrity in multilayer structures.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_7_figure_5.jpg","caption":"Figure 5. Approaches to realize area-selective ALD [(a), (c) and (e)] and area-selective ALEt [(b), (d) and (f)]. (a) and (b) show an approach that can be labeled \"inherently selective\". The substrate is composed of several materials and on the surface of some of the materials, deposition or etching does (virtually) not occur for the ALD or ALEt surface chemistry chosen. The selectivity is therefore, inherent to the specific ALD or ALE process. (c) and (d) show an approach that can be labeled as \"selective by deactivation\" since part of the substrate is deactivated by a layer of molecules or a film (mask). No etching or deposition takes place at the parts of the surface that are deactivated. This approach is standard for etching. It is not problematic if the mask material is somewhat etched as long as it etches much slower than the to-be-etched material. (e) and (f) show an approach that can be labeled \"selective by activation\". Film growth or etching only initiates on those parts of the surface that are activated, e.g., by a focused electron or ion beam that locally interacts with the surface. For ALD, processes exist in which this activation only needs to be done before the first cycle; $^{51}$ for ALEt, the local activation step needs to take place every cycle. In all the displayed cases for ALD [(a), (c) and (e)], the area-selective ALD processes depend on an effect known as nucleation delay. The film material easily deposits on some surfaces whereas on other areas, the film hardly nucleates or it takes much longer for the film to nucleate. For area-selective ALEt approaches (b) and (d), selectivity has the same meaning as that typical for etch processes. The to-be-etched material should etch much faster than any other material used. In (d), the selectivity should preferably approach infinity. Furthermore, it is noted that the possibility exists for designing area-selective ALEt approaches by combining ALEt and ALD. For example, area-selective ALD films can serve as a local mask.","id":"train/atomic-layer-etching/experimental-usecase/7/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/7/figure_5","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"},{"panel_id":"d","label":"conceptual diagram"},{"panel_id":"e","label":"conceptual diagram"},{"panel_id":"f","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/Atomic Layer Etching What CanWe Learn from Atomic Layer Deposition.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1022,"height":658,"image_format":"jpeg","image_sha256":"d01b62c1dedbcf3b373e8263f970148cf43f5e8bd221a0dfe515ca38cdc675c3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"d","x":468,"y":179,"width":544,"height":257},{"panel_id":"b","x":455,"y":-10,"width":561,"height":215},{"panel_id":"c","x":-4,"y":184,"width":476,"height":206},{"panel_id":"e","x":8,"y":407,"width":447,"height":232},{"panel_id":"f","x":464,"y":386,"width":565,"height":257},{"panel_id":"a","x":12,"y":-5,"width":430,"height":189}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The panel illustrates an inherent selectivity mechanism for area-selective ALD in which certain substrate regions support rapid nucleation while others show negligible nucleation, resulting in selective film growth without masking.\"},{\"panel_id\":\"b\",\"text\":\"The analogous inherent selectivity concept for ALEt is shown, where the chosen etch chemistry removes one material significantly faster than adjacent materials, producing selective etching without additional activation or masking.\"},{\"panel_id\":\"c\",\"text\":\"This panel shows selective deposition achieved by surface deactivation. A deactivating layer or molecular film blocks precursor adsorption, preventing ALD growth on protected areas while allowing nucleation on unmasked regions.\"},{\"panel_id\":\"d\",\"text\":\"Selective ALEt by deactivation is illustrated: a masking layer suppresses etching on the protected surfaces, enabling selective removal only from the exposed material. Etch selectivity depends on the much higher etch rate of the target material relative to the mask.\"},{\"panel_id\":\"e\",\"text\":\"The panel depicts selective ALD by activation, where only surfaces locally activated—e.g., by focused electron or ion beams—initiate nucleation. Activation is required only before the first ALD cycle for many processes.\"},{\"panel_id\":\"f\",\"text\":\"Selective ALEt by activation is shown, in which activation must occur each cycle to enable removal on targeted regions. Unactivated surfaces remain chemically inert and do not undergo material removal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"High etch selectivity ensures that the target material is removed much faster than the masking layer or surrounding materials. This prevents degradation of the mask during repeated cycles. Strong selectivity is essential to maintain pattern fidelity and protect underlying device structures.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In ALEt, each cycle removes the surface layer that was activated in the previous step. This means the surface loses its reactive state after every cycle. To continue selective removal, the surface must be reactivated again before the next cycle.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Inherent selectivity occurs because the ALD precursor nucleates easily on one surface material but shows little or no nucleation on another material.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Inherent selectivity in ALD arises from nucleation delay differences between surface materials, allowing growth on some regions while suppressing it on others.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_7_figure_6.jpg","caption":"Figure 6. A schematic representation of various types of cycles for $\\mathrm{ALD}^{48}$ that can also be employed for ALEt: (a) a regular process, (b) a multistep process and (c) a supercycle process. In a multistep process, one or more additional steps are added to the cycle to form, for instance, an ABC process. In a supercycle, the steps of two regular processes are combined where $m$ cycles of the first process are followed by $n$ cycles of the second process. The variables $m$ and $n$ can be chosen so as to obtain the desired properties for the ALD or ALEt process. Figure 5. Approaches that are being used to increase the throughput of ALD reactors that, in principle, can also be adopted for ALEt reactors. In (a), the approach is shown where the process is not operated under fully saturated conditions. When working with slightly shorter exposure times, the cycle time can significantly be reduced (e.g., by a factor of two) while the thickness deposited or removed is only slightly reduced. For many processes and device architectures, the level of growth for etch control remains acceptable. In (b), the so-called spatial atomic layer process is shown. The cycles are not carried out in the time domain but in the spatial domain. It is noted however, that developing appropriate processes for spatial ALD is not straightforward and this is probably even more so for spatial ALEt.","id":"train/atomic-layer-etching/experimental-usecase/7/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/7/figure_6","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"},{"panel_id":"d","label":"phase diagram"},{"panel_id":"e","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/Atomic Layer Etching What CanWe Learn from Atomic Layer Deposition.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":970,"height":1008,"image_format":"jpeg","image_sha256":"990585e067939e7307db04231b1d97a3861ab089770d287beacef5d1272691fa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"d","x":4,"y":533,"width":377,"height":472},{"panel_id":"b","x":265,"y":42,"width":292,"height":371},{"panel_id":"c","x":587,"y":38,"width":383,"height":380},{"panel_id":"e","x":523,"y":540,"width":444,"height":463},{"panel_id":"a","x":7,"y":40,"width":227,"height":374}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The schematic shows a regular ALD/ALEt cycle (AB)m in which self-limiting A and B half-reactions are alternated for m cycles. Each cycle delivers a fixed growth or etch per cycle once saturated.\"},{\"panel_id\":\"b\",\"text\":\"The multistep cycle (ABC)m introduces additional half-reactions, enabling tailoring of material composition or surface chemistry by adding a third reactant step while retaining cyclic self-limiting behavior.\"},{\"panel_id\":\"c\",\"text\":\"The supercycle schematic illustrates periodic repetition of two different regular processes. By tuning m and n for the (A1B1)m(A2B2)n combination, the final material properties or average growth/etch rate can be engineered with nanometer-scale precision.\"},{\"panel_id\":\"d\",\"text\":\"The bottom-left diagram explains throughput enhancement via reduced exposure times. Operating slightly below saturation shortens cycle duration while sacrificing only a small fraction of growth or etch per cycle, offering acceptable control in processes tolerant to minor deviations from saturation.\"},{\"panel_id\":\"e\",\"text\":\"The spatial ALD/ALE concept depicts precursor, co-reactant, and purge zones arranged along a substrate translation path. Instead of time-sequenced half-reactions, the substrate encounters spatially separated reaction environments, enabling high-throughput continuous processing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Spatial processes increase throughput because reactions happen at different locations instead of different times. The substrate moves through zones for precursor, purge, and co-reactant exposure without stopping. This removes waiting time between steps and allows faster processing while still keeping surface-controlled reactions.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"When exposure is shorter than saturation, the surface does not fully react, so less material is added or removed per cycle.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Regular cycles repeat the same A–, B steps with fixed behavior.\\n, -More complex cycles introduce additional steps or combinations to tune properties.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A regular cycle alternates one A step and one B step and repeats this sequence m times.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_5.jpg","caption":"Fig. 5. A 2D side view of the dynamic mesh for the spatial reactor design with $0.25 \\text{mm}$ gap distance.","id":"train/atomic-layer-etching/simulation-usecase/16/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_5","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1003,"height":248,"image_format":"jpeg","image_sha256":"4fa40dab31e8ddbb597ffa5e192f88fe2f02afcfd7aeca7e0e499320700741a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":8,"width":1003,"height":240}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image illustrates a sequence of steps involving nitrogen (N₂), vacuum, hydrofluoric acid (HF), and trimethylamine (TMA) treatments on a moving substrate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There is a minimum of five gas slits, most of them are used for the carrier and purge gas nitrogen.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the substrate is likely way bigger than the distance between slits, meaning that not the entire substrate is exposed to a single gas at a time.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There is no actual vacuum as there is a constant flow of gas there.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If TMA is dosed first, there has not yet been modification so there will be no etching.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_1.jpg","caption":"FIG. 1. Schematic of the PALE process. Completion of 1 cycle (passivation followed by etch) results in removal of a single monolayer. The cycle is repeated to etch many monolayers. $\\epsilon_{t1}$ is the threshold for chemically enhanced sputtering and $\\epsilon_{t2}$ is the threshold for physical sputtering.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":675,"height":486,"image_format":"jpeg","image_sha256":"dc54f0aa03693c796231b70ba8e332e525e0f2adf4dacce2fa04094a21cafde5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":486}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_12.jpg","caption":"FiG. 12. (Color online) Predicted etch profiles for a 10:1 aspect ratio $\\mathrm{SiO}_2$ -over-Si trench using $\\mathrm{Ar / c - C_4F_8}$ followed by Ar PALE for the first 3 cycles. There are initially $20~\\mathrm{ML}$ of $\\mathrm{SiO}_2$ on top of Si. The feature after the first passivation step is shown in frame 2 and following the first 3 cycles in frames 3-5. During each cycle, $1\\mathrm{ML}$ of $\\mathrm{SiO}_2$ is removed.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_12","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_12","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":581,"height":988,"image_format":"jpeg","image_sha256":"794c77fb78ca9b19418530251f6b30868d9674216ad67d7dbe15688091be0720","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":581,"height":988}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_13.jpg","caption":"FiG. 13. (Color online) Predicted etch profiles for a 10:1 aspect ratio $\\mathrm{SiO}_2$ -over-Si trench using $\\mathrm{Ar / c - C_4F_8}$ followed by Ar PALE. The bottom of feature is cleared in 20 cycles of PALE. Thick polymer layers buildup on the sidewall due to the redeposition of sputtered polymer and etch products from the bottom of the feature. This leads to narrowing of the feature.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_13","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_13","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":570,"height":761,"image_format":"jpeg","image_sha256":"8eb8157edeef38dc32e6fccadc8af22855d5028b9fc51edf12e8b97bfedb0ef7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":570,"height":761}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_14.jpg","caption":"FIG. 14. (Color online) Surface roughness as a function of ion energies during step 2 of $\\mathrm{SiO}_2$ PALE. (a) Final profiles for etching steps carried out with ion energies of 75, 100, and $120\\mathrm{eV}$ . (b) Surface roughness (in monolayers) increases with ion energies while decreasing cycle time. As the ion energies increase, the etch mechanism transitions from being chemically dominated to being physically dominated. The larger roughness at lower cycle time results from there being incomplete passivation during step 1.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_14","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_14","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":372,"height":853,"image_format":"jpeg","image_sha256":"0f5edc1e4518eeb8e8bd34c67824865c040d8c51bfe6ac73f5b146768e7c25bd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":367,"height":454},{"panel_id":"b","x":3,"y":481,"width":368,"height":368}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_15.jpg","caption":"FiG. 15. (Color online) Etch profiles for $\\mathrm{Ar / c - C_4F_8}$ and Ar PALE etching of a $\\mathrm{SiO}_2$ -over-Si self-aligned contact. The etch begins with $20~\\mathrm{ML}$ of Si aligned with $20~\\mathrm{ML}$ of $\\mathrm{SiO}_2$ A highly selective etch of the contact is achieved in 20 cycles of PALE using the IEADs shown in Fig. 11. The sidewall of the Si is less prone to damage due to passivation by redeposited etch products.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_15","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_15","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":575,"height":961,"image_format":"jpeg","image_sha256":"b95ea5c67fc167144f088164632eaf63b8fa09c8bf8a5f734cebea7820bcf8f0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":575,"height":961}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_18.jpg","caption":"FIG. 18. (Color online) Etch profiles for a 10:1 aspect ratio $\\mathrm{SiO}_2$ -over-Si trench during the main etch process. Microtrenching causes the Si at the sides of the trench to be exposed first.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_18","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_18","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_18.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_18.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":378,"height":525,"image_format":"jpeg","image_sha256":"0bbe7e033d17a8138bac2625a6962bfdbad498e1c7329410e99ba4a0938affbe","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":378,"height":525}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_19.jpg","caption":"FIG. 19. (Color online) Predicted etch profile for the over-etch of the $\\mathrm{SiO}_2$ -Si trench using an $\\mathrm{Ar} / \\tau \\mathrm{c}_{41}\\mathrm{F}_{8}$ nonsinusoidal PALE. The feature is cleared in 15 PALE cycles yielding an effective etch rate of $4 - 5\\mathrm{ML}$ cycle. The polymerizing radicals and low energy ions not only contribute to increased etching rates but also limit the damage to underlying Si. Note that the underlying Si is first exposed after 9 cycles of PALE.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_19","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_19","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_19.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_19.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":573,"height":897,"image_format":"jpeg","image_sha256":"d6c12ebf2f9736741f2df6bab13671766b831fdff61b9ed097417ebfcd61c5a1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":573,"height":897}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_20.jpg","caption":"FiG. 20. (Color online) Surface roughness and number of PALE cycles to clear the feature as a function of ion energies during step 2 of PALE. (a) Final etch profiles for step 2 ion energies of 80 and $120\\mathrm{eV}$ . (b) Surface roughness increases with increasing ion energies.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_20","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_20","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_20.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_20.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":481,"height":681,"image_format":"jpeg","image_sha256":"2dcc3f38ff347ba8f112eabe7bda9e902d891206c760f5301a74256102faca2e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":46,"y":3,"width":371,"height":250},{"panel_id":"b","x":3,"y":280,"width":478,"height":399}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_4.jpg","caption":"FiG. 4. (Color online) Etch profiles using PALE at the top corner of a 10:1 aspect ratio Si-FinFET using $\\mathrm{Ar / Cl}_2$ step 1 followed by Ar (step 2). The mesh resolution is $3\\mathrm{\\AA}$ . After 1 cycle, approximately $1\\mathrm{ML}$ is removed from both axial and lateral directions. After 3 cycles, $3\\mathrm{ML}$ were removed in the lateral direction but $4\\mathrm{ML}$ were removed in the axial direction.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_4","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":375,"height":672,"image_format":"jpeg","image_sha256":"74b171ac204a0c09d16e3832a937d1c4e87962d0e07c8979d8d5ca27656f295c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":375,"height":672}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_5.jpg","caption":"FIG. 5. (Color online) Etch profiles using PALE at the bottom corner of a 10:1 aspect ratio Si-FinFET using $\\mathrm{Ar / Cl}_2$ (step 1) followed by Ar (step 2). The mesh resolution is $3\\mathrm{\\AA}$ . The original height of the bottom surface is indicated by the arrow. Nonuniformities during a given cycle propagate to subsequent cycles.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_5","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":381,"height":636,"image_format":"jpeg","image_sha256":"bb8bd98ffe19c1702c25ef13192917be5c64ca404da88e1c4719035f3467af38","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":381,"height":636}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_6.jpg","caption":"FIG. 6. (Color online) Surface roughness as a function of ion energy during step 1 of PALE. (a) Final etch profiles of the top corner of the Si-FinFET for passivation steps carried out with ion energies of 15, 25, and $40 \\mathrm{eV}$ . The arrows indicate the original height of the feature. (b) Surface roughness (in monolayers) increases with ion energies during step 1.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_6","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":373,"height":625,"image_format":"jpeg","image_sha256":"7cad9ca2054ca38ce1331019ab873db74fe3979b1c24436a0fc59a65b09328f2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":4,"width":370,"height":277},{"panel_id":"b","x":0,"y":279,"width":373,"height":345}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_7.jpg","caption":"FIG. 7. (Color online) Surface roughness as a function of exposure time, $\\tau$ , for passivation during step 1 for Si PALE. A value of $\\tau = 1$ corresponds to exposure time of approximately 1 s with the IEADs shown in Fig. 3. (a) Upper left corner of Si-FinFET after 1 cycle. (b) Surface roughness (in monolayers) increases with $\\tau$ due to increased stochastic etching.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_7","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":375,"height":625,"image_format":"jpeg","image_sha256":"d7470a929c65b05f94ecb0daecff42080e44cd080879213ed671e0c993ad33a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":373,"height":276},{"panel_id":"b","x":1,"y":277,"width":370,"height":348}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_8.jpg","caption":"FIG. 8. (Color online) Etch profiles for a 5:1 aspect ratio Si-over- $\\mathrm{SiO}_2$ feature using an etching recipe which combines a conventional main etch followed by PALE for a soft landing. The main etch terminates with the taper shown in frame 2. The remaining feature is etched in 25 cycles of PALE with sufficient selectivity that damage to the underlying $\\mathrm{SiO}_2$ is limited to the first monolayer. (The number of PALE cycles is the number at the top of the trench.)","id":"train/atomic-layer-etching/simulation-usecase/19/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_8","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":372,"height":964,"image_format":"jpeg","image_sha256":"538a79435f67debe340a8630868365d401d4e52a550da6eec0282aa3a04e947c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":372,"height":964}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_23_fig_6.jpg","caption":"FIG. 6. Classification of ALE by directionality. Because thermal ALE uses nondirectional species both in the modification and removal step, the result is an isotropic etching profile. Data reproduced from Ref. 5.","id":"train/atomic-layer-etching/simulation-usecase/23/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/23/fig_6","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/Review Paper -- Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1081,"height":658,"image_format":"jpeg","image_sha256":"8db141a595d45daaa07a5559496449ffd139da87894da5f89b04d7a8b0bdc00f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":1,"width":1066,"height":653}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_24_fig_7.jpg","caption":"Fig. 7. Schematic of proposed reaction mechanism for HF/TMA thermal ALE ZnO thin film. Reproduced from Ref. [33].","id":"train/atomic-layer-etching/simulation-usecase/24/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/24/fig_7","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/Review Paper -- Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":900,"height":520,"image_format":"jpeg","image_sha256":"af55b477cc87012d1674837f8e4fec3acbe90518f908ced29ecbf67826407376","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":3,"y":2,"width":895,"height":248},{"panel_id":"a","x":3,"y":280,"width":890,"height":233}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_26_fig1.jpg","caption":"FIG.1. Single cycle of Si PA-ALE by Cl adsorption and $\\mathsf{Ar}^+$ ion irradiation. Each cycle consists of the adsorption step, where the Si surface is modified by incident Cl atoms and/or ions, and the desorption step, where the Cl modified surface is removed by low-energy $\\mathsf{Ar}^+$ ion impact. Here, gray, orange, and blue spheres represent Si, Cl, and Ar atoms (or ions), respectively.","id":"train/atomic-layer-etching/simulation-usecase/26/fig1","sample_id":"atomic-layer-etching/simulation-usecase/26/fig1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/Surface damage formation during atomic layer etching of silicon with chlorine adsorption.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1186,"height":467,"image_format":"jpeg","image_sha256":"0a370d38438803a3b478574823f91df4d3b02cd4c3930254bb633f80db6b707d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":4,"width":1176,"height":462}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_10.jpg","caption":"Fig. 10. Plan view atomistic structures of the bulk phase: (a) the initial $2 \\times 2 \\times 1$ supercell of expanded alpha- $\\mathrm{AlF_3}$ , $\\mathrm{Al_{24}F_{72}}$ , (b) the amorphous $\\mathrm{Al_{24}F_{72}}$ structure after melt-quenching using AIMD simulation, and (c) the final amorphous $\\mathrm{Al_{24}F_{72}}$ after geometry optimization by DFT.","id":"train/atomic-layer-etching/simulation-usecase/29/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_10","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":808,"height":461,"image_format":"jpeg","image_sha256":"3688d8834d588c8e4c3e213115821a0c3ae0676a3ccbbed19a552b7d11228a70","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":42,"width":230,"height":414},{"panel_id":"b","x":278,"y":48,"width":257,"height":411},{"panel_id":"c","x":587,"y":43,"width":220,"height":397}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_11.jpg","caption":"Fig. 11. Evolution of atomistic structures during the optimization of surface $-\\mathrm{FH}$ coverage on the $\\mathrm{a - AlF_3}$ slab model. The most exothermic reaction $(\\Delta E)$ and desorption $(E_{\\mathrm{des}})$ energies are also displayed in eV.","id":"train/atomic-layer-etching/simulation-usecase/29/fig_11","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_11","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1208,"height":414,"image_format":"jpeg","image_sha256":"722b458334ca99c97b31dada1c92d6197503bb82c89038e2686a4d7f1e6af6d3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":3,"width":1199,"height":406}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_12.jpg","caption":"Fig. 12. Planar views of the $\\mathrm{a - AlF_3}$ substrate models used to simulate the TMA removal reactions: (a) $-\\mathrm{F}$ terminated and (b) $-\\mathrm{CH_3}$ terminated models.","id":"train/atomic-layer-etching/simulation-usecase/29/fig_12","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_12","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":539,"height":470,"image_format":"jpeg","image_sha256":"ac378e5270752e33efe40005e10330766bca29c7052d33456b1446c679e3d1b4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":55,"width":257,"height":390},{"panel_id":"b","x":284,"y":55,"width":249,"height":395}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_14.jpg","caption":"Fig. 14. Changes in atomistic structures during the two-step removal reaction of $\\mathrm{a - AlF_3}$ by TMA. Dashed lines represent the main interatomic distances in $\\mathring{\\mathrm{A}}$","id":"train/atomic-layer-etching/simulation-usecase/29/fig_14","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_14","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1208,"height":608,"image_format":"jpeg","image_sha256":"97b629fe67d86e5b96bded38cfe629e173815b78ff9c6e7ba4c07099a394ec7c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":5,"width":1188,"height":604}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_4.jpg","caption":"Fig. 4. Evolution of atomistic structures during optimization of surface -OH coverage on the $\\mathsf{a - Al_2O_3}$ slab model. The most exothermic reaction $(\\Delta E)$ and desorption $(E_{\\mathrm{des}})$ energies are also displayed in eV.","id":"train/atomic-layer-etching/simulation-usecase/29/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_4","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1139,"height":372,"image_format":"jpeg","image_sha256":"97faf094c214a121d9e0616a2d8d5e062b35a3d45ee09c89205f2b40fcce2165","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":1134,"height":368}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_6.jpg","caption":"Fig. 6. Changes in atomistic structures for initial fluorination pathways of $\\mathrm{a - Al_2O_3}$ by HF. \"H\" refers to an H atom originating from the HF molecule. Dashed lines represent the important interatomic distances, with values in $\\mathring{\\mathrm{A}}$ .","id":"train/atomic-layer-etching/simulation-usecase/29/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_6","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1211,"height":864,"image_format":"jpeg","image_sha256":"c980f9ac3441c69c4ce319e632fc76f466a0f0eb4b28171f889339b93ffd3939","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":6,"width":1206,"height":855}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_7.jpg","caption":"Fig. 7. Changes in the atomistic structures for the second fluorination pathways of $\\mathrm{a - Al_2O_3}$ by HF. The label \"H\" refers to an H atom originating from the HF molecule. Dashed lines represent the important interatomic distances, with values in $\\mathring{\\mathrm{A}}$","id":"train/atomic-layer-etching/simulation-usecase/29/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_7","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1211,"height":453,"image_format":"jpeg","image_sha256":"d31aaf912eb57c8ca4dac3689eab0d984b1e2bc4678ea7275ab7a9bb78d1a64c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":3,"width":1195,"height":447}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_8.jpg","caption":"Fig. 8. Changes in atomistic structures for third fluorination pathways of a- $\\mathrm{Al_2O_3}$ by HF. The label \"H\" refers to an H atom originating from the HF molecule. Dashed lines represent the important interatomic distances, with values in $\\mathring{\\mathrm{A}}$","id":"train/atomic-layer-etching/simulation-usecase/29/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_8","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1205,"height":461,"image_format":"jpeg","image_sha256":"cb26674e0b3a8083ce87fedf445ed48c1b52367dff119d1a980f521a27e29860","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":1,"width":1201,"height":454}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_9.jpg","caption":"Fig. 9. Changes in atomistic structures for the subsurface fluorination of $\\mathrm{a - Al_2O_3}$ by HF. \"H\" refers to an H atom originating from the HF molecule. Dashed lines represent the important interatomic distances, with values in $\\mathring{\\mathrm{A}}$","id":"train/atomic-layer-etching/simulation-usecase/29/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_9","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1211,"height":241,"image_format":"jpeg","image_sha256":"c462ba3e66dd9f7326ae6387f40dc9dbb240f94a5288a999ef7c074874b4ae88","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":2,"width":1200,"height":237}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_3.jpg","caption":"FIG. 3. Side views of the simulations cell at various values of $\\mathsf{Ar}^+$ fluences during the ion bombardment step. The snapshot with the label of $0\\mathrm{ML}$ of $\\mathsf{Ar}^+$ refers to the simulation cell immediately after the chlorination step, before ion bombardment has begun. Translucent yellow spheres are $\\mathrm{Si}$ atoms, and solid cyan spheres are $\\mathrm{Cl}$ atoms. The $\\mathsf{Ar}^+$ energy is $80\\mathrm{eV}$ . The key results are that ion bombardment rapidly mixes $\\mathrm{Cl}$ into an amorphous layer about $1\\mathrm{nm}$ deep and that the $\\mathrm{Cl}$ is nearly uniform throughout the layer after a few $\\mathrm{ML}$ of fluence. The $\\mathrm{Cl}$ content in the layer slowly decreases with ion fluence. The snapshots were rendered in Ovito (Ref. 32).","id":"train/atomic-layer-etching/simulation-usecase/6/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_3","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":536,"height":919,"image_format":"jpeg","image_sha256":"527fac060f810ad96f564d34b204f4496d2feccdecd1dc177505c81ff11c640e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":536,"height":919}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_4.jpg","caption":"FIG. 4. Top views of the simulations cell at various values of $\\mathsf{Ar}^+$ fluences during the ion bombardment step corresponding to Fig. 3 (80 eV ion energy). The surface of the cell can be seen to be nearly saturated with $\\mathrm{Cl}$ before ion bombardment has begun (i.e., $0\\mathrm{ML}$ fluence). After $50\\mathrm{ML}$ of ion fluence, $\\mathrm{Cl}$ is nearly but not completely removed from the surface. The snapshots were rendered in Ovito (Ref. 32).","id":"train/atomic-layer-etching/simulation-usecase/6/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_4","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":533,"height":778,"image_format":"jpeg","image_sha256":"7b7aa5353262523696aa08a56ee270b90b008342e0161a73f31e75a8312fb276","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":533,"height":778}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_5.jpg","caption":"FIG. 5. Depiction of the near-surface phenomena during $\\mathsf{Ar^+}$ bombardment in $\\mathrm{Si - Cl_2 - Ar}$ ALE as observed in MD simulations. The regions labeled by red brackets and separated by red dashed lines are the Cl layer, amorphous mixed layer, and crystalline Si region. The green arrows indicate the major products leaving the surface (atomic Cl, $\\mathrm{SiCl}_2$ and atomic Si). The black arrows indicate two major events occurring near the surface. These events are Cl mixing from the Cl layer into the mixed layer and Si replenishment from the crystalline Si region into the mixed layer.","id":"train/atomic-layer-etching/simulation-usecase/6/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_5","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":675,"height":750,"image_format":"jpeg","image_sha256":"1429882a34e10ab56dad73688b8908318c9cccbaffe692093f6b79cec015bfa5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":750}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_9_fig_1.jpg","caption":"Fig. 1. Schematic of the photo-assistant ALE of chlorinated Si surfaces. The surface is modified by chlorine to weaken the back-bonds of target Si atomic layer; and then the modified Si layer is selectively removed/desorbed by $\\mathrm{Ar^{+}}$ bombardment assisted by photo-irradiation.","id":"train/atomic-layer-etching/simulation-usecase/9/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/9/fig_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/Mechanism of photoassisted atomic layer etching of chlorinated Si(111) surfaces Insight.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":689,"height":425,"image_format":"jpeg","image_sha256":"0d7386079879a4c65d4488c35a3873eed97fb098d29f4d0a90b72fe2a3a3c523","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":0,"width":680,"height":421}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_14_figure_1.jpg","caption":"FIGURE 1: Illustration of ALD growth mechanisms and characterizations. (a) Idealized schematic of the mechanisms of ALD process for $\\mathrm{WS}_2$ growth and in situ Nb doping. The doping concentration could be controlled by adjusting $\\mathrm{NbS}_2$ cycle numbers. (b) Photographs of 400-cycle $\\mathrm{WS}_2$ films deposited on 8-inch $\\alpha -\\mathrm{Al}_2\\mathrm{O}_3 / \\mathrm{Si}$ wafer, 2-inch sapphire wafer, and pieced GaN substrates. (c) The Raman spectra of annealed $\\mathrm{WS}_2$ on $\\mathrm{Si / Al}_2\\mathrm{O}_3$ , GaN, and sapphire confirm the successful synthesis of $\\mathrm{WS}_2$ on each substrate surface.","id":"train/atomic-layer-deposition/experimental-usecase/14/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/14/figure_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"stacked spectra chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":4,"width":864,"height":566},{"panel_id":"b","x":883,"y":11,"width":448,"height":295},{"panel_id":"c","x":881,"y":348,"width":464,"height":260}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/Hanjie Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1348,"height":628,"image_format":"jpeg","image_sha256":"606f691554dc3d944f3d563c718ab84b81001d69756ca47a192c8d101aeb3f39","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_14_figure_4.jpg","caption":"FIGURE 4: The electrical properties of $\\mathrm{WS}_2$ n-FETs and Nb-doped $\\mathrm{WS}_2$ p-FETs. (a) CMOS-compatible process flow of FETs and schematic of device structures. (b) The transfer and output characteristics of $\\mathrm{WS}_2$ n-FET with $2\\mu \\mathrm{m}$ gate width and the mobility distribution of $30\\mathrm{WS}_2$ n-FETs. The on-current reached $0.4\\mu \\mathrm{A} / \\mu \\mathrm{m}$ , and the on/off ratio was up to $10^{5}$ . (c) The transfer and output characteristics of 15-cycle Nb-doped $\\mathrm{WS}_2$ p-FET with $2\\mu \\mathrm{m}$ gate width and the distribution of $I_d$ at $V_d = 0.5\\mathrm{V}$ and $V_g = -4\\mathrm{V}$ for $132\\mathrm{Nb}$ -doped $\\mathrm{WS}_2$ p-FETs with 25-cycle Nb doping. The carrier type changed from electron to hole, and the on-current was $5\\times 10^{-2}\\mu \\mathrm{A} / \\mu \\mathrm{m}$ . (d) The doping effects on $\\mathrm{WS}_2$ FETs. Nb dopants varied from 1 to 20 cycles. Nb-doped $\\mathrm{WS}_2$ FET did not show p-type behavior but with a decreased on- and off-current until reaching 15 cycles. After 20-cycle Nb doping, the device presented heavily p-type behavior, indicating the controllable doping. (e) The PBTI of $\\mathrm{WS}_2$ n-FET at RT. The stress was set to be $5.5\\mathrm{V}$ . After $1000\\mathrm{s}$ stress, the on-current degraded only for $3.5\\%$ , while the $\\Delta V_{\\mathrm{th}}$ was up to $300\\mathrm{mV}$ . (f) The air stability of $\\mathrm{WS}_2$ n-FET in ambient for 1, 3, and 6 months. The on-current degraded slightly within one order, while the degradation of off-current was less obvious after 3 months than that of 6 months. (g) The I-V curve of $\\mathrm{WS}_2 / \\mathrm{Nb}$ -doped $\\mathrm{WS}_2$ p-n structures with the rectifying ratio of over $10^{4}$ . The inset figure was rectifying ratio.","id":"train/atomic-layer-deposition/experimental-usecase/14/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/14/figure_4","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"bar chart"},{"panel_id":"e","label":"multiple line chart"},{"panel_id":"f","label":"multiple line chart"},{"panel_id":"g","label":"box plot"},{"panel_id":"h","label":"multi spectra chart"},{"panel_id":"i","label":"multiple scatter plot"},{"panel_id":"j","label":"multiple line chart"},{"panel_id":"k","label":"line chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":8,"y":4,"width":309,"height":558},{"panel_id":"b","x":344,"y":8,"width":332,"height":316},{"panel_id":"c","x":709,"y":4,"width":324,"height":319},{"panel_id":"d","x":1059,"y":14,"width":276,"height":241},{"panel_id":"e","x":362,"y":381,"width":320,"height":316},{"panel_id":"f","x":692,"y":363,"width":340,"height":323},{"panel_id":"g","x":1034,"y":374,"width":300,"height":243},{"panel_id":"h","x":4,"y":757,"width":351,"height":331},{"panel_id":"i","x":376,"y":742,"width":334,"height":241},{"panel_id":"j","x":707,"y":755,"width":318,"height":315},{"panel_id":"k","x":1030,"y":758,"width":307,"height":225}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/Hanjie Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1339,"height":1091,"image_format":"jpeg","image_sha256":"81039482f73b502d1fb90c2cfb6a18533557676d133424758baae924771e09a2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_36_fig_1.jpg","caption":"Fig. 1 Schematic representation of the ALD process during $\\mathrm{Ga_2O_3}$ deposition","id":"train/atomic-layer-deposition/experimental-usecase/36/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/36/fig_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":282,"y":5,"width":792,"height":441}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/Huan-Yu Shih et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1345,"height":455,"image_format":"jpeg","image_sha256":"53b78723e04f8f1861f59e56bca64b09c665ad38ac470557c7dca54fe8ebea66","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_15.jpg","caption":"Figure 15. Scheme for FRET-based bio-detection of viruses: (left) ALD/MLD cycle for the growth of Eu-HQA thin films, (middle) enhancement of the red PL emission of Eu-HQA achieved by depositing the film on a nanoplasmonic substrate, and (right) principle of FRET mediated emission and its possible utilization bio-detection by using Eu-HQA as a donor chromophore and commercial AF 647 as an acceptor chromophore. (Reproduced under CC licence from ref. [55], 2023, Royal society of chemistry).","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_15","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_15","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"spectra chart"},{"panel_id":"c","label":"spectra chart"},{"panel_id":"d","label":"band diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic ALD/MLD cycle to grow Eu HQA films using Eu(thd)3 and HQA with N2 purge steps.\"},{\"panel_id\":\"b\",\"text\":\"Photoluminescence of Eu HQA on a silicon substrate under 400 nm excitation, showing the Eu3+ red emission feature (5D0 to 7F2).\"},{\"panel_id\":\"c\",\"text\":\"Photoluminescence of Eu HQA deposited on a nanoplasmonic substrate, illustrating strongly enhanced Eu3+ emission under similar excitation.\"},{\"panel_id\":\"d\",\"text\":\"Energy level and device concept for FRET based bio detection, where Eu HQA acts as the donor and AF 647 as the acceptor, leading to acceptor emission near 660 nm after energy transfer.\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"| Wavelength (nm) | Intensity (Norm.) |\\n|---|---|\\n| 500 | 0.05 |\\n| 615 | 1.00 |\\n| 700 | 0.10 |\"},{\"panel_id\":\"c\",\"text\":\"| Wavelength (nm) | Intensity (Norm.) |\\n|---|---|\\n| 500 | 0.02 |\\n| 590 | 0.15 |\\n| 615 | 1.00 |\\n| 630 | 0.10 |\\n| 700 | 0.10 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HQA acts as a sensitizer for Eu3+ luminescence, extending the excitation range up to about 400 nm.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The donor is Eu HQA and the acceptor is the commercial dye AF 647. The schematic indicates acceptor emission near 660 nm following energy transfer from the excited Eu HQA donor.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Eu HQA emission intensity is strongly enhanced (reported on the order of 20 fold).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Eu(thd)3 and HQA (2 hydroxyquinoline 4 carboxylic acid).\"}]}]","bbox":[{"panel_id":"c","x":422,"y":295,"width":419,"height":269},{"panel_id":"b","x":420,"y":5,"width":421,"height":291},{"panel_id":"a","x":6,"y":8,"width":410,"height":556},{"panel_id":"d","x":845,"y":3,"width":515,"height":560}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1364,"height":570,"image_format":"jpeg","image_sha256":"ec29dad05145b8b789f70760ad27959fd1d8cd3b4c96dcdf4efad6b306356814","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_2.jpg","caption":"Figure 2. Schematic illustration of ALD and ALD/MLD precursor pulsing cycles, resulting in the growth of inorganic (left) and hybrid (right) thin films with atomic/molecular level accuracy: Red: metal; Green: precursor ligand; Blue: oxygen; Light blue: organics.","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_2","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic of a conventional ALD cycle with a metal precursor pulse, purge, O3 pulse, then purge, yielding an inorganic film.\"},{\"panel_id\":\"b\",\"text\":\"Schematic of an ALD/MLD cycle with a metal precursor pulse, purge, organic precursor pulse, then purge, yielding a hybrid metal organic film.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Panel (a) uses an O3 pulse as the second reactant, while panel (b) uses an organic precursor pulse.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To introduce specific organic functional groups into the film\\n\\nTo tune film density and mechanical compliance\\n\\nTo adjust optical properties using organic chromophores or linkers\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Panel (a).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALD process in (a) builds an inorganic network through metal and oxidant half reactions. Replacing the oxidant pulse with an organic pulse in (b) implies incorporation of organic linkers between metal centers, producing a hybrid metal organic backbone rather than a purely inorganic oxide.\"}]}]","bbox":[{"panel_id":"b","x":1,"y":2,"width":997,"height":471},{"panel_id":"a","x":1,"y":2,"width":997,"height":471}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1017,"height":475,"image_format":"jpeg","image_sha256":"1a94d464458ab2fd396633dcc8eb0f398679a6dc678b4407b628de185f8eda47","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_7.jpg","caption":"Figure 7. Supercycle concept for doping in ALD: in the simplest case the supercycle consists of x cycles of the main metal and one cycle for the dopant metal, but the supercycle may also include several cycles of the dopant metal or several different metal-dopant.","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_7","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic supercycle for ALD doping: Metal A pulse, O3 pulse, dopant pulse, then O3 pulse, with the sequence repeated X times.\"},{\"panel_id\":\"b\",\"text\":\"Cartoon of the resulting film after one supercycle for different X values (X=1, X=3, X=5), showing increased dopant incorporation as X increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Decrease.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The cartoon suggests that the dopant is incorporated as discrete layers or planes inserted into the host matrix. When X is small, dopant insertion is frequent, so the dopant planes are closer together and the overall dopant fraction is higher. When X is larger, dopant insertion is less frequent, so dopant planes are more widely spaced and the film is host rich.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Metal A pulse, O3 pulse, dopant pulse, O3 pulse.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It provides a direct handle on dopant concentration via the ratio of host cycles to dopant cycles\\n\\nIt can maintain self limiting surface reactions while introducing controlled amounts of a second cation\\n\\nIt enables systematic optimization of functional properties such as conductivity, magnetism, or luminescence by adjusting dopant level\"}]}]","bbox":[{"panel_id":"b","x":2,"y":2,"width":651,"height":321},{"panel_id":"a","x":0,"y":326,"width":652,"height":386}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":652,"height":717,"image_format":"jpeg","image_sha256":"2b40c50d5d39ee02c5e30a6daba4cfaf8c6c77db321a43e90c13abdf5f0e9253","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_8.jpg","caption":"Precursor pulsing sequenceFigure 8. Different precursor dosing schemes in different ternary ALD processes for lightly-doped, homogeneously mixed, and nanolaminate materials.","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_8","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The schematic compares three ALD pulsing strategies, doping, homogeneous mixing, and nanolaminates, showing how different sequences of precursor A and precursor B cycles yield different film architectures.\"},{\"panel_id\":\"b\",\"text\":\"A legend defines the color coding for precursor A, precursor B, co reactant, and purging steps used in the pulse sequence cartoons.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A homogeneous mixed film has A and B distributed throughout the thickness without discrete layers, whereas a nanolaminate has alternating A rich and B rich layers.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Purging steps.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the doping style sequence, precursor B is inserted only occasionally among many precursor A cycles, so B contributes a low fraction of the incorporated cations and is distributed within an A rich matrix. In a nanolaminate sequence, blocks of A cycles and blocks of B cycles are repeated, which builds an intentional layered stacking. Because ALD is surface controlled, the sequence design is a primary lever for whether B is dispersed or segregated into layers.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Nanolaminates\"}]}]","bbox":[{"panel_id":"b","x":5,"y":4,"width":661,"height":305},{"panel_id":"a","x":5,"y":4,"width":661,"height":305}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":664,"height":311,"image_format":"jpeg","image_sha256":"23fff06b4a0a6aaf4249783e214eac8e7d634d0bff89ea540d69f90ef2605f9d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_9_figure_27.jpg","caption":"FIGURE 27.1 The coverage metrics of a film on a substrate with three-dimensional features. Coverage of the planar surface is evaluated using the uniformity while the coverage of three-dimensional features is evaluated using the conformality. The growth control over the film thickness itself is another important metric. The ability to achieve these metrics at low temperatures is an additional important aspect.","id":"train/atomic-layer-deposition/experimental-usecase/9/figure_27","sample_id":"atomic-layer-deposition/experimental-usecase/9/figure_27","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure basically illustrates essential thin-film coverage metrics over planar and 3D substrate features, illustrating how uniformity, conformality, and growth control define overall film quality. It also highlights how important it is for advanced device fabrication to achieve these parameters at low substrate temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Uniformity assesses planar surface covering, while conformality evaluates coverage over three-dimensional characteristics.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Precise control of uniformity, conformality, and growth allows thin films to work consistently on both planar and complex 3D device topologies. Reaching these parameters guarantees uniform mechanical, optical, and electrical behaviour throughout the substrate. Low-temperature processing is especially crucial for temperature-sensitive materials and future flexible or polymer-based electronics, enabling high-quality films without damaging the underlying structures.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Planar regions → evaluated using uniformity, 3D trenches or high-aspect-ratio features → evaluated using conformality, Film thickness precision → assessed using growth control, Thermal sensitivity of substrate → tied to low-temperature deposition requirements\"}]}]","bbox":[{"panel_id":"a","x":11,"y":3,"width":687,"height":289}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/9/images/figure_27.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/9/images/figure_27.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/9/H.C.M. Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":775,"height":294,"image_format":"jpeg","image_sha256":"15e4b4d9b695313cbf4dfb4e5eea37d378098c1f5882acf1d1230b08c9cdd170","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_10_figure_1.jpg","caption":"Figure 1. Schematic representation of the area-selective ALD process of $\\mathrm{In}_2\\mathrm{O}_3{:}\\mathrm{H}$ on H-terminated silicon materials. In the first step (1), microscale patterns are defined by activating the surface with a $\\mu$ plasma operated in air or $\\mathrm{O}_2$ . In the second step (2), the $\\mathrm{In}_2\\mathrm{O}_3{:}\\mathrm{H}$ is deposited selectively on the activated areas in a building step. The ALD process consists of two alternating half reactions: $\\mathrm{InCp}$ precursor dosing in pulse A and a mixture of $\\mathrm{O}_2$ and $\\mathrm{H}_2\\mathrm{O}$ dosing in pulse B. Note that in the case that conductive substrates are used, a thin dielectric membrane $(\\mathrm{Al}_2\\mathrm{O}_3)$ is positioned between the needles and the substrate, as shown in Figure S1a.","id":"train/atomic-layer-deposition/simulation-usecase/10/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/10/figure_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Patterning step (surface modification by μ-plasma): a μ-plasma “printer” locally activates selected regions of an initially H-terminated silicon-based surface, creating a chemical contrast between activated and non-activated areas for subsequent selective growth.\"},{\"panel_id\":\"b\",\"text\":\"Building step (area-selective ALD): In₂O₃:H grows selectively on the plasma-activated areas during alternating ALD half-cycles (Pulse A: InCp dose; Pulse B: H₂O + O₂ dose). The schematic shows the 1st ALD cycle initiating nucleation only on activated regions and the nᵗʰ cycle building thickness there while non-activated regions remain largely inhibited due to long nucleation delay.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the 1st cycle, the main challenge is nucleation: growth begins only where the surface has been activated. By the nᵗʰ cycle, those activated regions have an existing film, so growth proceeds more straightforwardly and thickness builds up locally. The non-activated regions are intended to stay largely free of In₂O₃:H over many cycles because their nucleation delay is much longer.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Step 1 (Patterning): local surface activation using a μ-plasma\\n\\nStep 2 (Building): area-selective ALD of In₂O₃:H on the activated areas\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The selectivity relies on a contrast between H-terminated silicon (initial surface) and plasma-activated silicon (more oxide-/OH-like). In₂O₃:H ALD has a long nucleation delay on the H-terminated surface but nucleates much more readily on the activated surface. This chemical-state difference is what converts the plasma “pattern” into a growth/no-growth pattern during ALD.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It combines pattern definition and film deposition in a bottom-up sequence, reducing reliance on repeated lithography/etch steps that can damage or contaminate films. The method targets microscale patterns relevant for large-area electronics and patterned TCOs (e.g., displays and photovoltaics). In principle, this can improve throughput and simplify process flows while retaining high In₂O₃:H film quality.\"}]}]","bbox":[{"panel_id":"b","x":307,"y":3,"width":688,"height":497},{"panel_id":"a","x":4,"y":4,"width":303,"height":501}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1017,"height":503,"image_format":"jpeg","image_sha256":"a05e7eb2ea2a449285fbf5a96dd00a1506b76e6d9f0bcd8ba258a4fd55034c41","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_4.jpg","caption":"Figure 4: The ABC-type atomic layer deposition technique for ASALD employing small inhibitor molecules. (a) Absorption of inhibitor molecules unto the non-growth region. (b) The inhibitor molecules impede the precursor molecules' adsorption on the non-growing region. (c) The co-reactant gets rid of the precursor ligands and the inhibitor molecules from the system.","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_4","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"c","x":917,"y":56,"width":450,"height":377},{"panel_id":"b","x":468,"y":49,"width":447,"height":462},{"panel_id":"a","x":6,"y":49,"width":452,"height":462}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1372,"height":514,"image_format":"jpeg","image_sha256":"d44b386443ae21d132ade53c4424ed31a73ae044cca246fbcf51649c6f447816","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_19_e70a78e89322dc51a23a861148b7b0e471c521978b82552b2fde84db664cb782.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/19/e70a78e89322dc51a23a861148b7b0e471c521978b82552b2fde84db664cb782","sample_id":"atomic-layer-deposition/simulation-usecase/19/e70a78e89322dc51a23a861148b7b0e471c521978b82552b2fde84db664cb782","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The given chart is a graphical abstract representing the major results as a compiled summary to reflect the highlights of the paper. The image panel displays various molecular structures and diagrams related to plasma treatment and electrical characteristics.\"},{\"panel_id\":\"b\",\"text\":\"The multiple line chart illustrates the drain current as a function of gate voltage for different plasma treatments and durations.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Gate Voltage (V) | Drain Current (A) | Condition | Remark |\\n|-----------------:|------------------:|------------------|------------------------------------------|\\n| -5 | 10⁻¹² | O₂⁺ 1 s | |\\n| -5 | 10⁻¹² | N₂O⁺ 1 s | |\\n| -5 | 10⁻¹³ | N₂O⁺ 5 s | |\\n| -5 | 10⁻¹² | Pristine | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -5 | 10⁻¹² | 100 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -5 | 10⁻¹² | 500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -5 | 10⁻¹² | 1500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -5 | 10⁻¹² | 2000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -5 | 10⁻¹² | 2500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -5 | 10⁻¹² | 3000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -5 | 10⁻¹² | 3600 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -5 | 10⁻¹² | 7200 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -5 | 10⁻¹² | 10000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -4 | 10⁻¹² | O₂⁺ 1 s | |\\n| -4 | 10⁻¹² | N₂O⁺ 1 s | |\\n| -4 | 10⁻¹³ | N₂O⁺ 5 s | |\\n| -4 | 10⁻¹² | Pristine | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -4 | 10⁻¹² | 100 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -4 | 10⁻¹² | 500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -4 | 10⁻¹² | 1500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -4 | 10⁻¹² | 2000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -4 | 10⁻¹² | 2500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -4 | 10⁻¹² | 3000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -4 | 10⁻¹² | 3600 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -4 | 10⁻¹² | 7200 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -4 | 10⁻¹² | 10000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -2 | 10⁻¹² | O₂⁺ 1 s | |\\n| -2 | 10⁻¹² | N₂O⁺ 1 s | |\\n| -2 | 10⁻¹³ | N₂O⁺ 5 s | |\\n| -2 | 10⁻¹² | Pristine | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -2 | 10⁻¹² | 100 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -2 | 10⁻¹² | 500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -2 | 10⁻¹² | 1500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -2 | 10⁻¹² | 2000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -2 | 10⁻¹² | 2500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -2 | 10⁻¹² | 3000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -2 | 10⁻¹² | 3600 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -2 | 10⁻¹² | 7200 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| -2 | 10⁻¹² | 10000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 0 | 10⁻⁵ | O₂⁺ 1 s | |\\n| 0 | 10⁻⁵ | N₂O⁺ 1 s | |\\n| 0 | 10⁻⁶ | N₂O⁺ 5 s | |\\n| 0 | 10⁻¹² | Pristine | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 0 | 10⁻¹² | 100 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 0 | 10⁻¹² | 500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 0 | 10⁻¹² | 1500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 0 | 10⁻¹² | 2000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 0 | 10⁻¹² | 2500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 0 | 10⁻¹² | 3000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 0 | 10⁻¹² | 3600 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 0 | 10⁻¹² | 7200 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 0 | 10⁻¹² | 10000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 2 | 10⁻⁴ | O₂⁺ 1 s | |\\n| 2 | 10⁻⁴ | N₂O⁺ 1 s | |\\n| 2 | 10⁻⁵ | N₂O⁺ 5 s | |\\n| 2 | 10⁻⁵ | Pristine | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 2 | 10⁻⁵ | 100 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 2 | 10⁻⁵ | 500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 2 | 10⁻⁵ | 1500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 2 | 10⁻⁵ | 2000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 2 | 10⁻⁵ | 2500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 2 | 10⁻⁵ | 3000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 2 | 10⁻⁵ | 3600 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 2 | 10⁻⁵ | 7200 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 2 | 10⁻⁵ | 10000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 4 | 10⁻⁴ | O₂⁺ 1 s | |\\n| 4 | 10⁻⁴ | N₂O⁺ 1 s | |\\n| 4 | 10⁻⁴ | N₂O⁺ 5 s | |\\n| 4 | 10⁻⁴ | Pristine | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 4 | 10⁻⁴ | 100 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 4 | 10⁻⁴ | 500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 4 | 10⁻⁴ | 1500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 4 | 10⁻⁴ | 2000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 4 | 10⁻⁴ | 2500 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 4 | 10⁻⁴ | 3000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 4 | 10⁻⁴ | 3600 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 4 | 10⁻⁴ | 7200 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\\n| 4 | 10⁻⁴ | 10000 s | N₂O⁺ 5 s – PBTS 95 °C, 2 MV/cm |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Breaking the trade-off. Usually, adding nitrogen to improve stability (low ΔV_TH) comes at the cost of destroying mobility (low μ_FE). This selective route achieves high stability (ΔV_TH = 0.45 V) without sacrificing high mobility (>100 cm² V⁻¹ s⁻¹). It effectively combines the best properties of both plasma types, avoiding the usual engineering compromise.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"True Black Levels & Energy Efficiency. The low off-current (10⁻¹³ A) prevents charge leakage from the pixel capacitor, ensuring that \\\"black\\\" pixels stay truly black without flickering or graying out. The steep slope allows the pixel to switch extremely fast between on/off states with minimal voltage swing, reducing power consumption and motion blur.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Indium oxide layer: Standard O₂ plasma\\n\\n, Gallium oxide layer: Selective N₂O plasma\\n\\n, Zinc oxide layer: Standard O₂ plasma\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Vacancy Passivation. The diagram shows a Nitrogen atom occupying a site that was previously an Oxygen Vacancy (V_o, orange 'V' circle). By filling this vacancy, the Nitrogen atom eliminates a defect site that would otherwise act as an electron trap, thereby 'healing' the lattice structure and improving stability without destroying the carrier transport network.\"}]}]","bbox":[{"panel_id":"c","x":399,"y":355,"width":338,"height":89},{"panel_id":"b","x":380,"y":99,"width":358,"height":240},{"panel_id":"a","x":68,"y":91,"width":304,"height":360}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/e70a78e89322dc51a23a861148b7b0e471c521978b82552b2fde84db664cb782.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/e70a78e89322dc51a23a861148b7b0e471c521978b82552b2fde84db664cb782.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/Dong-Gyu Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":741,"height":450,"image_format":"jpeg","image_sha256":"b229afb494a909079c9128d32ae12d59dc5dd234fa86cc7832d10ec55a80b8ea","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_19_figure_3.jpg","caption":"Figure 3. Electrical characteristics of the selective $\\mathrm { N } _ { 2 } \\mathrm { O }$ applied IGZO TFTs. (a) Schematic of selective ${ \\bf N } _ { 2 } { \\bf O }$ plasma reactant applications in IGZO active layers. Transfer curves and extracted $\\mu _ { \\mathrm { F E } }$ as a function of gate voltages of the IGZO TFTs with selective $\\Nu _ { 2 } \\mathrm { O }$ plasma applied for $\\left( \\boldsymbol { \\mathbf { b } } , \\boldsymbol { \\mathbf { e } } \\right)$ indium oxide, $( \\mathbf { c } , \\mathbf { f } )$ gallium oxide, and $( \\mathbf { d } , \\mathbf { g } )$ zinc oxide.","id":"train/atomic-layer-deposition/simulation-usecase/19/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/19/figure_3","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multiple scatter plot"},{"panel_id":"d","label":"multiple scatter plot"},{"panel_id":"e","label":"multiple scatter plot"},{"panel_id":"f","label":"multiple scatter plot"},{"panel_id":"g","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic illustrating selective application of N₂O* plasma to individual oxide sub-layers (In₂O₃, Ga₂O₃, and ZnO) within the IGZO active layer, along with corresponding effects on drain current and field-effect mobility.\"},{\"panel_id\":\"b\",\"text\":\"Transfer characteristics (Iᴅs vs. Vɢs) of IGZO TFTs with selective N₂O* and O₂* plasma applied to the indium oxide sub-cycle for 1 s and 5 s.\"},{\"panel_id\":\"c\",\"text\":\"Transfer characteristics (Iᴅs vs. Vɢs) of IGZO TFTs with selective N₂O* and O₂* plasma applied to the gallium oxide sub-cycle for 1 s and 5 s.\"},{\"panel_id\":\"d\",\"text\":\"Transfer characteristics (Iᴅs vs. Vɢs) of IGZO TFTs with selective N₂O* and O₂* plasma applied to the zinc oxide sub-cycle for 1 s and 5 s.\"},{\"panel_id\":\"e\",\"text\":\"Field-effect mobility (μғᴇ) as a function of gate voltage for IGZO TFTs with selective N₂O* and O₂* plasma applied to the indium oxide sub-cycle.\"},{\"panel_id\":\"f\",\"text\":\"Field-effect mobility (μғᴇ) as a function of gate voltage for IGZO TFTs with selective N₂O* and O₂* plasma applied to the gallium oxide sub-cycle.\"},{\"panel_id\":\"g\",\"text\":\"Field-effect mobility (μғᴇ) as a function of gate voltage for IGZO TFTs with selective N₂O* and O₂* plasma applied to the zinc oxide sub-cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Gate Voltage (V) | Drain Current (A) |Indium Oxide |\\n|-----------------|------------------|-----------|\\n| -6 | 10⁻¹² | O₂ 1s* |\\n| -6 | 10⁻¹² | N₂O 1s* |\\n| -6 | 10⁻¹² | N₂O 5s* |\\n| -5 | 10⁻¹² | O₂ 1s* |\\n| -5 | 10⁻¹² | N₂O 1s* |\\n| -5 | 10⁻¹² | N₂O 5s* |\\n| -4 | 10⁻¹² | O₂ 1s* |\\n| -4 | 10⁻¹² | N₂O 1s* |\\n| -4 | 10⁻¹² | N₂O 5s* |\\n| -3 | 10⁻¹¹ | O₂ 1s* |\\n| -3 | 10⁻¹¹ | N₂O 1s* |\\n| -3 | 10⁻¹¹ | N₂O 5s* |\\n| -2 | 10⁻⁸ | O₂ 1s* |\\n| -2 | 10⁻⁹ | N₂O 1s* |\\n| -2 | 10⁻¹⁰ | N₂O 5s* |\\n| -1 | 10⁻⁶ | O₂ 1s* |\\n| -1 | 10⁻⁷ | N₂O 1s* |\\n| -1 | 10⁻⁸ | N₂O 5s* |\\n| 0 | 10⁻⁵ | O₂ 1s* |\\n| 0 | 10⁻⁶ | N₂O 1s* |\\n| 0 | 10⁻⁶ | N₂O 5s* |\\n| 1 | 10⁻⁵ | O₂ 1s* |\\n| 1 | 10⁻⁵ | N₂O 1s* |\\n| 1 | 10⁻⁵ | N₂O 5s* |\\n| 2 | 10⁻⁴ | O₂ 1s* |\\n| 2 | 10⁻⁴ | N₂O 1s* |\\n| 2 | 10⁻⁵ | N₂O 5s* |\\n| 3 | 10⁻⁴ | O₂ 1s* |\\n| 3 | 10⁻⁴ | N₂O 1s* |\\n| 3 | 10⁻⁵ | N₂O 5s* |\\n| 4 | 10⁻⁴ | O₂ 1s* |\\n| 4 | 10⁻⁴ | N₂O 1s* |\\n| 4 | 10⁻⁴ | N₂O 5s* |\"},{\"panel_id\":\"c\",\"text\":\"| Gate Voltage (V) | Drain Current (A) | Gallium Oxide |\\n|-----------------|------------------|-----------|\\n| -6 | 10⁻¹² | O₂ 1s* |\\n| -6 | 10⁻¹² | N₂O 1s* |\\n| -6 | 10⁻¹² | N₂O 5s* |\\n| -5 | 10⁻¹² | O₂ 1s* |\\n| -5 | 10⁻¹² | N₂O 1s* |\\n| -5 | 10⁻¹² | N₂O 5s* |\\n| -4 | 10⁻¹² | O₂ 1s* |\\n| -4 | 10⁻¹² | N₂O 1s* |\\n| -4 | 10⁻¹² | N₂O 5s* |\\n| -3 | 10⁻¹¹ | O₂ 1s* |\\n| -3 | 10⁻¹¹ | N₂O 1s* |\\n| -3 | 10⁻¹¹ | N₂O 5s* |\\n| -2 | 10⁻⁹ | O₂ 1s* |\\n| -2 | 10⁻⁹ | N₂O 1s* |\\n| -2 | 10⁻¹⁰ | N₂O 5s* |\\n| -1 | 10⁻⁷ | O₂ 1s* |\\n| -1 | 10⁻⁷ | N₂O 1s* |\\n| -1 | 10⁻⁸ | N₂O 5s* |\\n| 0 | 10⁻⁵ | O₂ 1s* |\\n| 0 | 10⁻⁵ | N₂O 1s* |\\n| 0 | 10⁻⁶ | N₂O 5s* |\\n| 1 | 10⁻⁴ | O₂ 1s* |\\n| 1 | 10⁻⁴ | N₂O 1s* |\\n| 1 | 10⁻⁵ | N₂O 5s* |\\n| 2 | 10⁻⁴ | O₂ 1s* |\\n| 2 | 10⁻⁴ | N₂O 1s* |\\n| 2 | 10⁻⁴ | N₂O 5s* |\\n| 3 | 10⁻⁴ | O₂ 1s* |\\n| 3 | 10⁻⁴ | N₂O 1s* |\\n| 3 | 10⁻⁴ | N₂O 5s* |\\n| 4 | 10⁻³ | O₂ 1s* |\\n| 4 | 10⁻⁴ | N₂O 1s* |\\n| 4 | 10⁻⁴ | N₂O 5s* |\"},{\"panel_id\":\"d\",\"text\":\"| Gate Voltage (V) | Drain Current (A) | Zinc Oxide |\\n|----------------|----------------|-----------|\\n| -6 | 10⁻¹² | O₂ 1s* |\\n| -6 | 10⁻¹² | N₂O 1s* |\\n| -6 | 10⁻¹² | N₂O 5s* |\\n| -5 | 10⁻¹² | O₂ 1s* |\\n| -5 | 10⁻¹² | N₂O 1s* |\\n| -5 | 10⁻¹² | N₂O 5s* |\\n| -4 | 10⁻¹² | O₂ 1s* |\\n| -4 | 10⁻¹² | N₂O 1s* |\\n| -4 | 10⁻¹² | N₂O 5s* |\\n| -3 | 10⁻¹¹ | O₂ 1s* |\\n| -3 | 10⁻¹¹ | N₂O 1s* |\\n| -3 | 10⁻¹¹ | N₂O 5s* |\\n| -2 | 10⁻⁹ | O₂ 1s* |\\n| -2 | 10⁻⁹ | N₂O 1s* |\\n| -2 | 10⁻¹⁰ | N₂O 5s* |\\n| -1 | 10⁻⁷ | O₂ 1s* |\\n| -1 | 10⁻⁷ | N₂O 1s* |\\n| -1 | 10⁻⁸ | N₂O 5s* |\\n| 0 | 10⁻⁵ | O₂ 1s* |\\n| 0 | 10⁻⁶ | N₂O 1s* |\\n| 0 | 10⁻⁶ | N₂O 5s* |\\n| 1 | 10⁻⁵ | O₂ 1s* |\\n| 1 | 10⁻⁵ | N₂O 1s* |\\n| 1 | 10⁻⁵ | N₂O 5s* |\\n| 2 | 10⁻⁴ | O₂ 1s* |\\n| 2 | 10⁻⁴ | N₂O 1s* |\\n| 2 | 10⁻⁵ | N₂O 5s* |\\n| 3 | 10⁻⁴ | O₂ 1s* |\\n| 3 | 10⁻⁴ | N₂O 1s* |\\n| 3 | 10⁻⁴ | N₂O 5s* |\\n| 4 | 10⁻⁴ | O₂ 1s* |\\n| 4 | 10⁻⁴ | N₂O 1s* |\\n| 4 | 10⁻⁴ | N₂O 5s* |\"},{\"panel_id\":\"e\",\"text\":\"| Gate Voltage (V) | Field Effect Mobility (cm²/Vs) | Indium Oxide Condition |\\n|-----------------|-------------------------------|------------------------|\\n| -4 | — | O₂* 1 s |\\n| -4 | — | N₂O* 1 s |\\n| -4 | 1.62 | N₂O* 5 s |\\n| -2 | 0.77 | O₂* 1 s |\\n| -2 | — | N₂O* 1 s |\\n| -2 | 0.77 | N₂O* 5 s |\\n| -1 | 2.57 | O₂* 1 s |\\n| -1 | — | N₂O* 1 s |\\n| -1 | 0.74 | N₂O* 5 s |\\n| 0 | 130 | O₂* 1 s |\\n| 0 | 7.21 | N₂O* 1 s |\\n| 0 | 1.11 | N₂O* 5 s |\\n| 2 | 58.63 | O₂* 1 s |\\n| 2 | 47.56 | N₂O* 1 s |\\n| 2 | 16.39 | N₂O* 5 s |\\n| 4 | 47.56 | O₂* 1 s |\\n| 4 | 39.31 | N₂O* 1 s |\\n| 4 | 22.74 | N₂O* 5 s |\"},{\"panel_id\":\"f\",\"text\":\"| Gate Voltage (V) | Field Effect Mobility (cm²/Vs) | Gallium Oxide Condition |\\n|-----------------|-------------------------------|-------------------------|\\n| -4 | — | O₂* 1 s |\\n| -4 | — | N₂O* 1 s |\\n| -4 | 0.7 | N₂O* 5 s |\\n| -2 | — | O₂* 1 s |\\n| -2 | — | N₂O* 1 s |\\n| -2 | 0.7 | N₂O* 5 s |\\n| -1 | 8.86 | O₂* 1 s |\\n| -1 | 7.07 | N₂O* 1 s |\\n| -1 | 0.7 | N₂O* 5 s |\\n| 0 | 136.9 | O₂* 1 s |\\n| 0 | 131 | N₂O* 1 s |\\n| 0 | 10.72 | N₂O* 5 s |\\n| 2 | 57 | O₂* 1 s |\\n| 2 | 56 | N₂O* 1 s |\\n| 2 | 48 | N₂O* 5 s |\\n| 4 | 50 | O₂* 1 s |\\n| 4 | 48 | N₂O* 1 s |\\n| 4 | 40 | N₂O* 5 s |\"},{\"panel_id\":\"g\",\"text\":\"| Gate Voltage (V) | Field Effect Mobility (cm²/Vs) | Zinc Oxide Condition |\\n|-----------------|------------------------------|---------------------|\\n| -4 | — | O₂* 1 s |\\n| -4 | — | N₂O* 1 s |\\n| -4 | 0.7 | N₂O* 5 s |\\n| -2 | — | O₂* 1 s |\\n| -2 | — | N₂O* 1 s |\\n| -2 | 0.7 | N₂O* 5 s |\\n| -1 | 6.17 | O₂* 1 s |\\n| -1 | — | N₂O* 1 s |\\n| -1 | 0.7 | N₂O* 5 s |\\n| 0 | 136 | O₂* 1 s |\\n| 0 | 108 | N₂O* 1 s |\\n| 0 | 1.65 | N₂O* 5 s |\\n| 2 | 55 | O₂* 1 s |\\n| 2 | 49 | N₂O* 1 s |\\n| 2 | 42 | N₂O* 5 s |\\n| 4 | 46 | O₂* 1 s |\\n| 4 | 40 | N₂O* 1 s |\\n| 4 | 36 | N₂O* 5 s |\"}]","vqa":"[{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Gallium oxide (IG*ZO). In panel (f), the mobility curve for the N₂O-treated sample (Red line) remains close to the reference, whereas Indium (panel e) and Zinc (panel g) treatments cause severe mobility degradation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Carrier conduction path. Indium 5s orbitals form the primary conduction band minimum. N₂O treatment during the Indium cycle disrupts orbital overlap or excessively reduces carrier density, leading to a collapse in electron mobility.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Best trade-off. The IGZO sample maintains high mobility comparable to the reference while delivering the greatest improvement in stability, unlike Indium- or Zinc-treated samples that degrade electrical performance.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Pulse substitution. The N₂O plasma step is selectively substituted only during a specific cation sub-cycle (e.g., Gallium or Indium), while O₂ plasma is used for the remaining cation layers.\"}]}]","bbox":[{"panel_id":"d","x":853,"y":613,"width":381,"height":450},{"panel_id":"b","x":7,"y":595,"width":407,"height":470},{"panel_id":"c","x":429,"y":601,"width":398,"height":470},{"panel_id":"g","x":850,"y":1132,"width":384,"height":461},{"panel_id":"e","x":0,"y":1112,"width":424,"height":476},{"panel_id":"f","x":434,"y":1120,"width":401,"height":470},{"panel_id":"a","x":7,"y":5,"width":1230,"height":556}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/Dong-Gyu Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1239,"height":1595,"image_format":"jpeg","image_sha256":"1dc7769540eedd87f1393992d55d9d471c4942323ccb31f93289202bd2bf02d3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_25_figure_3.jpg","caption":"Figure 3. CLD simulation box snapshots. (A) Precursor injection, (B) water injection, (C) solvent addition and surface relaxation, and (D) surface after relaxation. Color code: red = aluminum, blue = oxygen, yellow = hydrogen, and white = O-sec-Bu ligand. Solvent atoms in panel C are shown with a reduced size.","id":"train/atomic-layer-deposition/simulation-usecase/25/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/25/figure_3","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"},{"panel_id":"d","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":3,"width":216,"height":292},{"panel_id":"b","x":221,"y":0,"width":209,"height":296},{"panel_id":"c","x":472,"y":7,"width":152,"height":289},{"panel_id":"d","x":653,"y":18,"width":186,"height":277}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/Kristopher S. Brown et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":842,"height":297,"image_format":"jpeg","image_sha256":"9909e19fcf615858cedc22f06c23ca12f174729e20d8d48cc48c24d7e891e84b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_29_fig_2.jpg","caption":"Fig. 2. An example of ALD as an adsorption process. \"1\" represents the initial solution, which includes the precursor and inert gas, \"0\" represents the substrate, which is the adsorbent, \"ll\" is the bulk phase and \"ll\" is the ASS phase.","id":"train/atomic-layer-deposition/simulation-usecase/29/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/29/fig_2","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":1,"width":645,"height":278}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":650,"height":281,"image_format":"jpeg","image_sha256":"684b8ee560f07a866cb405f7f368c0c46b58a0bd3aa8d247c433614b5f79d0d5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_29_fig_3.jpg","caption":"Fig. 3. (a) The total amount of fluid molecules is divided into two independent phases that are assumed to be homogeneous: the adsorbed or surface phase and the bulk phase. (b) The adsorbate solid solution is defined as the reference system, and the bulk phase is considered to be uninfluenced by the solid.","id":"train/atomic-layer-deposition/simulation-usecase/29/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/29/fig_3","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":9,"y":8,"width":299,"height":392},{"panel_id":"b","x":348,"y":8,"width":295,"height":385}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":647,"height":402,"image_format":"jpeg","image_sha256":"382ff99ff99ac3781cc514abc193592c1efb2287efd28ad77166769ab0b525b1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_fc74a7a43c2b4e7c76706ffb02402008e78e3a13e96c96e04dbe586e50ac0aef.jpg","caption":"Scheme 1. An Overview of the AS-ALD Process Studied in This Work","id":"train/atomic-layer-deposition/simulation-usecase/30/fc74a7a43c2b4e7c76706ffb02402008e78e3a13e96c96e04dbe586e50ac0aef","sample_id":"atomic-layer-deposition/simulation-usecase/30/fc74a7a43c2b4e7c76706ffb02402008e78e3a13e96c96e04dbe586e50ac0aef","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The SMI treatment step shows the TMPS inhibitor structure (propyl blocking group, methoxy reactive groups) and its selective binding to silanol groups on the non-growth surface (a-SiO₂) while not affecting the growth surface (Cu). The red X indicates the SMI does not bind to Cu.\"},{\"panel_id\":\"b\",\"text\":\"The ideal AS-ALD outcome where Al₂O₃ deposits exclusively on Cu(111) while the intact SMI layer completely protects the silica surface from deposition.\"},{\"panel_id\":\"c\",\"text\":\"The realistic AS-ALD scenario where the SMI blocking layer progressively degrades, allowing Al₂O₃ nucleation on the NGS. Actual selectivity is determined by the ratio of nucleation between surfaces.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Green = aluminum, blue = silicon, red = oxygen, white = hydrogen (as indicated in the legend at bottom left).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The SMI's methoxy reactive groups undergo condensation reactions specifically with surface silanol (Si−OH) groups present on a-SiO₂, which are absent on the Cu(111) surface.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In ideal AS-ALD, the SMI layer completely blocks Al₂O₃ growth on the non-growth surface while deposition proceeds normally on Cu. In real AS-ALD, the blocking layer progressively disintegrates through reactions with precursors and co-reactants, leading to Al₂O₃ nucleation within the degraded SMI layer on the NGS.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Selectivity is determined by the ratio of Al₂O₃ nucleation between the NGS and GS, not simply by whether the blocking layer remains intact.\"}]}]","bbox":[{"panel_id":"a","x":8,"y":4,"width":376,"height":570},{"panel_id":"b","x":384,"y":4,"width":411,"height":570},{"panel_id":"c","x":799,"y":4,"width":483,"height":566}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/fc74a7a43c2b4e7c76706ffb02402008e78e3a13e96c96e04dbe586e50ac0aef.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/fc74a7a43c2b4e7c76706ffb02402008e78e3a13e96c96e04dbe586e50ac0aef.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1281,"height":575,"image_format":"jpeg","image_sha256":"d8602adc4d116e9f70e97bab53c4fcae688c9c89dcb96734ed8f5d92af27782e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_6.jpg","caption":"Figure 6. Dependency of the reaction energies of DB and SB/SB SMI configurations on the $\\mathrm{Si - OH}$ distance. (a) Scheme visualizing the initial inter-silanol distance $(d_{\\mathrm{init}})$ , the DB $\\mathrm{O_{surf}}$ bonding distance $(d_{\\mathrm{bond}})$ , and their difference $(\\Delta d)$ . (b) Plot showing the dependence of $E_{\\mathrm{elec}}$ on the $\\Delta d$ for DB SMI configurations, with A.1-O:13 as the reference. (c and d) Dependence of $E_{\\mathrm{elec}}$ of the SB/SB configurations on $d_{\\mathrm{bond}}$ and $\\Delta d$ , respectively, with the geminal A.1-O:34 configuration being the reference (empty circle).","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_6","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"},{"panel_id":"d","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Conceptual diagram defining the distance metrics for analyzing SMI bonding configurations. d_init is the initial inter-silanol distance on the free surface, d_bond is the distance between surface oxygen atoms after forming a doubly bonded (DB) SMI, and Δd is their absolute difference representing the structural distortion required for bonding.\"},{\"panel_id\":\"b\",\"text\":\"Scatter plot showing electronic energy (ΔE_elec) versus Δd for DB SMI configurations, referenced to the most stable A.1-O:13 configuration. Below Δd = 1.2 Å, energies remain moderate (~50 kJ/mol). Beyond this threshold, ΔE_elec increases dramatically (>100 kJ/mol), indicating large energy penalties for DB formation when significant silanol rearrangement is required.\"},{\"panel_id\":\"c\",\"text\":\"Scatter plot showing ΔE_elec versus d_bond for SB/SB configurations (two singly bonded SMIs sharing adjacent silanols), referenced to geminal A.1-O:34 (empty circle). Electronic stability increases (more negative ΔE_elec) with larger d_bond, indicating that greater separation between two SB SMIs reduces steric repulsion.\"},{\"panel_id\":\"d\",\"text\":\"Scatter plot showing ΔE_elec versus Δd for SB/SB configurations. Larger Δd correlates with less negative ΔE_elec, showing that surface distortion to accommodate two adjacent SMIs imposes an energy penalty that partially offsets the stabilization from increased separation.\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"| Delta d (Å) | Delta E_elec (kJ/mol) |\\n|---|---|\\n| 0.20 | 0 |\\n| 0.30 | 25 |\\n| 0.70 | 45 |\\n| 0.90 | 50 |\\n| 1.05 | 50 |\\n| 1.20 | 50 |\\n| 1.60 | 140 |\\n| 1.85 | 120 |\\n| 1.95 | 60 |\\n| 2.25 | 230 |\\n| 3.00 | 155 |\"},{\"panel_id\":\"c\",\"text\":\"| d_bond (Å) | Delta E_elec (kJ/mol) |\\n|---|---|\\n| 2.65 | 0 |\\n| 3.52 | -19 |\\n| 3.62 | -34 |\\n| 4.18 | -56 |\"},{\"panel_id\":\"d\",\"text\":\"| Delta d (Å) | Delta E_elec (kJ/mol) |\\n|---|---|\\n| 0.00 | 0 |\\n| 0.30 | -55 |\\n| 0.60 | -35 |\\n| 1.35 | -20 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The empty circle represents the geminal A.1-O:34 SB/SB configuration, which serves as the reference point (ΔE_elec = 0) for comparing other SB/SB configurations.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The data show that short inter-silanol distances (d_init < 4 Å) favor DB configuration formation, while larger distances favor two separate SB SMIs. By analyzing the silanol distribution on a given surface, one can predict which binding motif will be energetically preferred at each site. This allows systematic derivation of the most stable full-coverage blocking layer without computing all possible permutations, by simply matching silanol pair distances to the appropriate bonding mode.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This threshold marks the boundary between feasible and unfeasible doubly bonded (DB) SMI configurations. When Δd < 1.2 Å, the surface silanols are already close enough that minimal structural rearrangement is needed for one TMPS molecule to bond to both, resulting in moderate energy penalties. When Δd > 1.2 Å (corresponding to initial inter-silanol distances ≥4 Å), the silica framework must deform substantially to bring the oxygens into bonding distance, causing ΔE_elec to exceed 100 kJ/mol and making DB formation kinetically and thermodynamically unfavorable.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Greater separation between two singly bonded SMIs reduces steric repulsion between their substituents (propyl and methoxy groups), lowering the electronic energy and stabilizing the configuration.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":36,"width":443,"height":192},{"panel_id":"b","x":3,"y":262,"width":443,"height":276},{"panel_id":"c","x":3,"y":568,"width":456,"height":284},{"panel_id":"d","x":3,"y":889,"width":453,"height":275}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":458,"height":1167,"image_format":"jpeg","image_sha256":"edb813b12206e5feaaf8ac58a04c1d60e250669c224f79bab0546dee2a0aac07","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_36_1f9e0529d34adda6c403150df151b32e21816537452767e5b795a9552cca5fb3.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/36/1f9e0529d34adda6c403150df151b32e21816537452767e5b795a9552cca5fb3","sample_id":"atomic-layer-deposition/simulation-usecase/36/1f9e0529d34adda6c403150df151b32e21816537452767e5b795a9552cca5fb3","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The inset presents a conceptual molecular rendering of trimethylaluminum (TMA) physisorbed on a self-assembled monolayer, emphasizing weak, reversible surface association rather than chemical incorporation.\"},{\"panel_id\":\"b\",\"text\":\"The main panel illustrates, at a conceptual level, how TMA molecular density above a SAM-coated surface differs under high- and low-pressure exposure conditions, highlighting pressure-dependent surface coverage behavior relevant to precursor dosing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The molecules are depicted as intact species resting near the SAM surface without any bond formation or ligand exchange. Their placement suggests proximity-driven association rather than incorporation into the surface. This visual treatment implies weak, reversible interaction characteristic of physisorption.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Chemical uniformity of the SAM surface.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Higher molecular density above the surface at high pressure\\n, -Greater spacing between molecules at low pressure\\n, -Increased near-surface crowding in the high-pressure region\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Low precursor pressure can lead to underexposure, particularly in regions with restricted transport. This may result in incomplete surface coverage and nonuniform film growth. The figure highlights why adequate pressure is needed to ensure consistent exposure.\"}]}]","bbox":[{"panel_id":"a","x":10,"y":8,"width":162,"height":121},{"panel_id":"b","x":89,"y":124,"width":382,"height":254}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/1f9e0529d34adda6c403150df151b32e21816537452767e5b795a9552cca5fb3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/1f9e0529d34adda6c403150df151b32e21816537452767e5b795a9552cca5fb3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/Seunggi Seo et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":472,"height":378,"image_format":"jpeg","image_sha256":"342922fdd713dfe5d7afcd43fb4d6009622d1c21db17f16deef584a1c69852df","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_1.jpg","caption":"Figure 1. Sheet to sheet type reactor design for a two-step, spatial atomic layer deposition process. Reagents are continuously introduced in separate reaction zones, and a plate-shaped substrate is transported via a conveyor belt through each zone.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A schematic of a sheet-to-sheet spatial atomic layer deposition reactor, showing separate reaction zones for different reagents and a conveyor belt transporting plate-shaped substrates to enable continuous, high-throughput deposition without lengthy purging steps.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Description|\\n|-----------|\\n|Sheet-to-sheet type reactor design for a two-step, spatial atomic layer deposition process. Reagents are continuously introduced in separate reaction zones, and a plate shaped substrate is transported via a conveyor belt through each zone|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Solar photovoltaic technology, Other rigid substrate applications in electronics and coatings\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The sheet-to-sheet configuration allows continuous substrate transport and avoids lengthy purging, making it more efficient for high-throughput deposition on rigid substrates compared to traditional roll-to-roll systems, which are primarily designed for flexible substrates.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the sheet-to-sheet spatial ALD reactor, reagents are introduced in separate reaction zones that are isolated by inert gases. The plate-shaped substrate is transported continuously via a conveyor belt through each zone, eliminating the need for lengthy purging steps between precursor exposures. This spatial separation allows the reactions to remain self-limiting while significantly increasing throughput.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Gas curtains are used to separate the reaction zones, preventing cross-contamination between different reagents.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1011,"height":528}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1011,"height":528,"image_format":"jpeg","image_sha256":"a0b8888d68d9c48efcc667489e5ff23de9b41b83f4a6d1c506131784f8d2231c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_2.jpg","caption":"Figure 2. Diagram depicting the various length and time scales applicable for the multiscale modeling simulation, which is composed of mesoscopic and macroscopic modeling. Mesoscopic modeling is composed of ab initio quantum and statistical mechanics and the kinetic Monte Carlo method, and the macroscopic model consists of reactor modeling and computational fluid dynamics simulations. Prior work [49] has utilized machine learning or regression methods to determine optimal operating conditions to achieve high synergy.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_2","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 2 presents a conceptual diagram of a multiscale modeling framework that connects mesoscopic simulations (ab initio quantum, statistical mechanics, kinetic Monte Carlo) with macroscopic simulations (reactor modeling and computational fluid dynamics). The framework captures multiple time and length scales and can integrate machine learning or regression methods to optimize operating conditions and achieve high synergy.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Description|\\n|-----------|\\n|Conceptual diagram showing the multiscale modeling approach, integrating mesoscopic simulations (ab initio quantum, statistical mechanics, kinetic Monte Carlo) with macroscopic simulations (reactor modeling and computational fluid dynamics). The framework links different time and length scales and can incorporate machine learning or regression methods to optimize operating conditions|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Machine learning methods, Regression analysis, Data-sharing programming methodologies\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. By combining mesoscopic and macroscopic simulations, the approach captures phenomena at multiple scales, providing more accurate and predictive modeling than relying solely on macroscopic simulations.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The framework links mesoscopic simulations, such as ab initio quantum calculations, statistical mechanics, and kinetic Monte Carlo, with macroscopic simulations like reactor modeling and computational fluid dynamics. This integration is achieved through a data-sharing methodology, allowing information from one scale to inform and guide simulations at another scale, enabling accurate predictions across different time and length scales.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ab initio quantum calculations, statistical mechanics, and the kinetic Monte Carlo (kMC) method.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1056,"height":745}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1056,"height":745,"image_format":"jpeg","image_sha256":"3bfb232940bb21a7fe9a4bc45172f9628a84f1144f798f8f61dc2c24d162c2dc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_4.jpg","caption":"Figure 4. Kinetic Monte Carlo simulation on lattice diagram. For each reaction site, an identifiable number is allocated corresponding to a reaction if the selection condition of a certain reaction path is satisfied in Equation (6).","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_4","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Conceptual diagram of the kinetic Monte Carlo (kMC) simulation on a lattice, showing probabilistic assignment of reactions to 90,000 substrate sites based on weighted reaction rate constants. Time progression is determined by a secondary random number, and steric hindrance effects illustrate how bulky adsorbates affect neighboring site availability in the simulation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Site (row \\\\ column) | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |\\n| ------------------- | - | - | - | - | - | - | - | - | - | -- | -- | -- |\\n| 1 | 0 | 0 | 0 | 0 | 0 | 3 | 0 | 0 | 0 | 0 | 0 | 1 |\\n| 2 | 0 | 1 | 3 | 0 | 2 | 1 | 0 | 3 | 0 | 1 | 2 | 0 |\\n| 3 | 0 | 0 | 2 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 1 | 0 |\\n| 4 | 0 | 0 | 3 | 4 | 0 | 1 | 0 | 0 | 1 | 0 | 3 | 0 |\\n| 5 | 0 | 4 | 0 | 1 | 3 | 0 | 0 | 2 | 0 | 0 | 1 | 2 |\\n| 6 | 0 | 3 | 2 | 0 | 0 | 0 | 0 | 0 | 3 | 0 | 1 | 0 |\\n| 7 | 2 | 0 | 0 | 0 | 0 | 0 | 1 | 0 | 0 | 0 | 0 | 1 |\\n| 8 | 0 | 1 | 0 | 3 | 1 | 0 | 2 | 0 | 0 | 1 | 0 | 0 |\\n| 9 | 0 | 2 | 3 | 0 | 0 | 3 | 0 | 0 | 2 | 0 | 0 | 3 |\\n| 10 | 0 | 0 | 0 | 2 | 0 | 0 | 4 | 3 | 0 | 0 | 1 | 4 |\\n| 11 | 3 | 0 | 0 | 0 | 1 | 0 | 3 | 3 | 4 | 0 | 0 | 0 |\\n| 12 | 0 | 2 | 2 | 1 | 0 | 0 | 3 | 0 | 1 | 0 | 0 | 0 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Assign reaction sites on the lattice, Calculate total reaction rate (ktot) from possible reactions at each site, Randomly select a reaction using a weighted probability (g1 ∈ (0,1]), Determine time progression for the selected reaction using a secondary random number (g2 ∈ (0,1]), Apply steric hindrance rules to block neighboring sites as needed, Update the lattice to reflect adsorption and reaction outcomes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Including steric hindrance ensures that bulky adsorbates block neighboring sites, which better reflects actual surface kinetics and improves the predictive accuracy of adsorption behavior.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The kMC algorithm probabilistically assigns reactions to each substrate site based on weighted reaction rate constants. A random number (g1) is generated to select a reaction at each site, and a secondary random number (g2) determines the time progression before the next reaction occurs. The process accounts for steric hindrance, ensuring bulky adsorbates properly block adjacent sites, thereby reflecting realistic surface kinetics.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The lattice is 300 × 300, containing a total of 90,000 reaction sites.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1094,"height":378}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1094,"height":378,"image_format":"jpeg","image_sha256":"15ba6ca26b7b3c7d7ac3fbcaecb106aaffc4b3fa933466f41fc913fb887bd378","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_42_fig3.jpg","caption":"Fig.3 (a) Schematic diagram of the $\\mathsf{H}_2\\mathsf{O}$ -added sequence. (b) GPC change with respect to the $\\mathsf{H}_2\\mathsf{O}$ feeding time. (c) GPC change with respect to the $\\mathsf{H}_2\\mathsf{O}$ purge time at various $\\mathsf{H}_2\\mathsf{O}$ feeding times of (black) 3, (red) 5, and (blue) $10~\\mathrm{s}$ . (d) Deposited $\\mathsf{TiO_2}$ thin film thickness with respect to the conducting $\\mathsf{TiO_2}$ ALD cycle number by (black) the conventional sequence, and (red) the $\\mathsf{H}_2\\mathsf{O}$ -added sequence.","id":"train/atomic-layer-deposition/simulation-usecase/42/fig3","sample_id":"atomic-layer-deposition/simulation-usecase/42/fig3","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":52,"y":7,"width":289,"height":272},{"panel_id":"b","x":351,"y":10,"width":312,"height":299},{"panel_id":"c","x":11,"y":314,"width":327,"height":301},{"panel_id":"d","x":354,"y":310,"width":308,"height":312}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/Yeonchoo Cho et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":664,"height":622,"image_format":"jpeg","image_sha256":"d9b7bd8b099d27374b16a23fcf661d6567b60f8b46cf401dc4833d860d0a738f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_5_figure_1.jpg","caption":"Figure 1. Schematic representation of the area-selective ALD approach of $\\mathrm{ZnO}$ on an H-terminated amorphous Si layer. First, nanoscale patterns are defined by depositing a $\\mathrm{SiO}_2$ seed layer using EBID (patterning step 1). Next, $\\mathrm{ZnO}$ is deposited selectively on the activated areas (i.e., $\\mathrm{SiO}_2$ seed layer patterns) by area-selective ALD (building step 2). This ALD process consists of cycles of two alternating half-reactions: precursor dosing in pulse A and coreactant dosing in pulse B.","id":"train/atomic-layer-deposition/simulation-usecase/5/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/5/figure_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":74,"y":190,"width":514,"height":169},{"panel_id":"a","x":2,"y":7,"width":671,"height":183}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":664,"height":350,"image_format":"jpeg","image_sha256":"cdc9f7567de42f0358b0edbd686f27e87e2dc8da09f36debfebfdafc3a872898","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_54_ce4b85c2c05eb698fe6f1e4a630c87912516d299eb7c63ba511f48b14c78b28f.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/54/ce4b85c2c05eb698fe6f1e4a630c87912516d299eb7c63ba511f48b14c78b28f","sample_id":"atomic-layer-deposition/simulation-usecase/54/ce4b85c2c05eb698fe6f1e4a630c87912516d299eb7c63ba511f48b14c78b28f","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":4,"width":664,"height":282}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/ce4b85c2c05eb698fe6f1e4a630c87912516d299eb7c63ba511f48b14c78b28f.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/ce4b85c2c05eb698fe6f1e4a630c87912516d299eb7c63ba511f48b14c78b28f.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/Guoyong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":666,"height":289,"image_format":"jpeg","image_sha256":"5b8e5f872887553f59fd51abfbbea6b045a67f13ec68c6c4445435db84a03bce","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_54_figure_2.jpg","caption":"Figure 2. $\\mathrm{SiCl}_4$ half-reaction of $\\mathrm{SiO}_2$ ALD catalyzed by Lewis bases. Reprinted with permission from ref 21. Copyright 2012 American Chemical Society.","id":"train/atomic-layer-deposition/simulation-usecase/54/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/54/figure_2","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":1,"width":842,"height":554}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/Guoyong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":850,"height":559,"image_format":"jpeg","image_sha256":"d6e2fb79a8425b5ab1cb3a00e850feff5c05f609743a357ae5fd8a0e178eafe4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_54_figure_3.jpg","caption":"Figure 3. Schematic illustrations of (a) Berry pseudorotation and (b) surface pseudorotation. Reprinted with permission from ref 21. Copyright 2012 American Chemical Society.","id":"train/atomic-layer-deposition/simulation-usecase/54/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/54/figure_3","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":5,"width":646,"height":245},{"panel_id":"b","x":1,"y":257,"width":665,"height":478}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/Guoyong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":669,"height":739,"image_format":"jpeg","image_sha256":"ef2d89d6e2388e511002505280b7c64a98e6656cb5ccbd3500239632474669e8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_54_figure_8.jpg","caption":"Figure 8. Hybridization forms of an Al catalytic site of $\\mathrm{Al}_2\\mathrm{O}_3 / \\mathrm{SiO}_2$ nanolaminate RALD. Reprinted with permission from ref 29. Copyright 2013 Royal Society of Chemistry.","id":"train/atomic-layer-deposition/simulation-usecase/54/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/54/figure_8","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":2,"width":633,"height":258}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/Guoyong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":639,"height":261,"image_format":"jpeg","image_sha256":"0ee3649c42298bd98a0f1ddcee3c21c8c142300e66392f12312f50b367209872","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_57_804392671053c3d965a6c80fa3f03a740d8c6c1d639eb6cf747e8301533be1bb.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/57/804392671053c3d965a6c80fa3f03a740d8c6c1d639eb6cf747e8301533be1bb","sample_id":"atomic-layer-deposition/simulation-usecase/57/804392671053c3d965a6c80fa3f03a740d8c6c1d639eb6cf747e8301533be1bb","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":8,"width":534,"height":372}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/804392671053c3d965a6c80fa3f03a740d8c6c1d639eb6cf747e8301533be1bb.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/804392671053c3d965a6c80fa3f03a740d8c6c1d639eb6cf747e8301533be1bb.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/C. Goehry et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":541,"height":380,"image_format":"jpeg","image_sha256":"2cdc5dad140438c08b44d092716d9a32ba3f8d28c70123572f6c2ff90750bc2c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_6_figure_3.jpg","caption":"Figure 3. Schematic of common growth modes in ALD: (a) Volmer-Weber; (b) Frank-van der Merwe; and (c) Stranski-Krastanov.","id":"train/atomic-layer-deposition/simulation-usecase/6/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/6/figure_3","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image depicts the Volmer-Weber growth mechanism.\"},{\"panel_id\":\"b\",\"text\":\"The image depicts the Frank-van der Merwe growth mechanism.\"},{\"panel_id\":\"c\",\"text\":\"The image depicts the Stranski-Krastanov growth mechanism.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This method is mostly used for the fabrication of quantum dots.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This growth mode is extremely suitable for high uniformity for extremely thin films as the full substrate is covered already after a single cycle.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A different name of this growth mode is island growth, as the growth areas are islands of material.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This growth mode will not lead to fast uniform layers as the islands will first grow vertically.\"}]}]","bbox":[{"panel_id":"c","x":680,"y":9,"width":289,"height":198},{"panel_id":"b","x":329,"y":8,"width":320,"height":197},{"panel_id":"a","x":4,"y":3,"width":294,"height":202}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":972,"height":205,"image_format":"jpeg","image_sha256":"10a1b69eba7ff7dc53aa82a47e05379967c235b7974bb5a8305cb8cdb4290356","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_9_figure_2.jpg","caption":"Figure 2. Top view of ideal configuration. Several $\\mathrm{HfO_2}$ cubes are deposited on the substrate with an ideal agreement of cell. A two-dimensional cell is identified where there should not be any ambiguity between atom species and locations.","id":"train/atomic-layer-deposition/simulation-usecase/9/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/9/figure_2","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a top-view schematic of an ideal HfO₂ structure placed on a Si/SiO₂ substrate. Different symbols are used to mark atom types and their layer positions. Silicon atoms appear only in the first layer, while hafnium atoms are placed in alternating positions depending on whether the layer number is even or odd. Ionic oxygen positions are also marked to show local bonding sites. The dashed square highlights one repeating two-dimensional cell where atom types and positions are clearly defined. This layout is used to remove confusion when building models or simulations of HfO₂ growth on silicon.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A repeating two-dimensional unit cell.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Silicon atoms (represented by inverted white triangles) appear exclusively in the k = 1 layer.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Building simulation input structures\\n, -Defining atomic positions clearly\\n, -Avoiding ambiguity in lattice models\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The highlighted unit cell shows the smallest repeating part of the lattice. Once this cell is defined, the full structure can be built by repeating it in two dimensions. This makes the structure easier to understand, copy, and use in calculations without redefining every atom manually.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":5,"width":661,"height":500}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/A. Dkhissi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":667,"height":506,"image_format":"jpeg","image_sha256":"af0969919581e5b9a543d039dad18080be5aa1ee5b5233399dfd23d7aff0bfc2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_9_figure_4.jpg","caption":"Figure 4. Connection between the atomic model of configuration and the substrate.","id":"train/atomic-layer-deposition/simulation-usecase/9/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/9/figure_4","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a top-view schematic that explains how an oxide atomic model connects to a silicon substrate. Different symbols represent silicon, hafnium, oxygen, and ionic oxygen atoms arranged on a regular grid defined by the i and j directions. The dashed shape marks a single two-dimensional cell that repeats across the surface. This layout helps define clear atom positions and avoids confusion between species when building simulation models for oxide growth on silicon.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Silicon atoms.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Keeps atom positions clear\\n, -Avoids mixing atom types\\n, -Supports periodic boundary setup\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Each atom type plays a different role in bonding and stability. Clear separation avoids wrong bonds and helps the model reflect how oxide layers actually connect to the silicon surface during early growth.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The diagram shows that not all surface sites are identical. Some areas have different local bonding options, which can lead to uneven nucleation. This helps explain why early growth may vary before the surface becomes fully covered.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":1,"width":662,"height":452}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/A. Dkhissi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":667,"height":456,"image_format":"jpeg","image_sha256":"39a77fdcee94744c064d7a69730e37146636fb5877444e617866ff7f1bf5aeaa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_11_91ed15720c14d19c8e5203b7deeae70f372025882dbfcb676c5ac98e8cf273da.jpg","caption":"","id":"train/atomic-layer-etching/experimental-usecase/11/91ed15720c14d19c8e5203b7deeae70f372025882dbfcb676c5ac98e8cf273da","sample_id":"atomic-layer-etching/experimental-usecase/11/91ed15720c14d19c8e5203b7deeae70f372025882dbfcb676c5ac98e8cf273da","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":5,"y":9,"width":459,"height":159},{"panel_id":"a","x":8,"y":175,"width":455,"height":202}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/91ed15720c14d19c8e5203b7deeae70f372025882dbfcb676c5ac98e8cf273da.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/91ed15720c14d19c8e5203b7deeae70f372025882dbfcb676c5ac98e8cf273da.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plasma.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":466,"height":378,"image_format":"jpeg","image_sha256":"2c0e48f9599979fa3d5aa949bfe678c97f02a700acfadaa1dce5c00c1de2ccac","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_11_figure_1.jpg","caption":"Figure 1. Schematic overview of several approaches for ALE categorized into anisotropic and plasma-based; isotropic and plasma-based; and isotropic and purely thermally driven. Anisotropic ALE can be obtained by employing (a) plasma radical-driven reaction to modify the material surface (half-reaction A) and plasma-generated ions or neutral beams to directionally remove the modified layer (B); (b) thermochemical reaction to modify the material surface (A) and plasma-generated ions or neutral beams to directionally remove the modified layer (B). Isotropic ALE can be obtained using (c) thermochemical reaction to remove the material, while surface modification takes place (A), and a radical-driven plasma step to reset the surface (B); (d) plasma radical-driven reaction to modify the material surface (A) and a thermal annealing step to desorb the modified layer (B); (e) thermochemical reaction to modify the surface (A) and a second thermochemical reaction to remove the modified surface layer (B); or (f) thermochemical reaction to modify the surface (A) and a thermal annealing step to desorb the modified layer (B). Examples of the approaches are given in refs 11, 13, 14 for (a); ref 24 for (b); this work for (c); refs 18, 20, 31 for (d); refs 13, 16 for (e); and ref 32 for (f).","id":"train/atomic-layer-etching/experimental-usecase/11/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/11/figure_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"},{"panel_id":"d","label":"conceptual diagram"},{"panel_id":"e","label":"conceptual diagram"},{"panel_id":"f","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"d","x":13,"y":617,"width":421,"height":173},{"panel_id":"b","x":26,"y":226,"width":393,"height":177},{"panel_id":"c","x":13,"y":435,"width":444,"height":159},{"panel_id":"e","x":13,"y":802,"width":440,"height":172},{"panel_id":"f","x":18,"y":974,"width":425,"height":167},{"panel_id":"a","x":19,"y":56,"width":408,"height":178}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plasma.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":447,"height":1142,"image_format":"jpeg","image_sha256":"0ecb3d332f96da0ec1c6be374bcf7a379989829d8ce5a92387d38539e093df67","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_1.jpg","caption":"Figure 1. Schematic of ALE process based on sequential surface modification and volatile release reactions.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":12,"width":648,"height":444}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":661,"height":464,"image_format":"jpeg","image_sha256":"26d5a0db30108b887ad54c63cc8583dd0cb8869e1de7b0db1127b23a6cdb3ac8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_17.jpg","caption":"Figure 17. Schematic of SiN ALE using surface modifying hydrofluorocarbon plasma and thermal annealing. Reproduced with permission from ref 48. Copyright 2017 IOP Publishing.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_17","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_17","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":2,"width":656,"height":192}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_17.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_17.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":666,"height":195,"image_format":"jpeg","image_sha256":"feead40cb0ee58f34b989f893fe9f16945216b3ef7bb448e219637c71f7b62a2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_3.jpg","caption":"Figure 3. Ligand-exchange reaction between $\\mathrm{AlF}_3$ and $\\mathrm{Al(CH}_3\\mathrm{)}_3$ . Reproduced with permission from ref 9. Copyright 2016 American Chemical Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_3","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":7,"width":665,"height":255}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":669,"height":261,"image_format":"jpeg","image_sha256":"36a2f56c613a2c6372c805efb9a70415f89dc3d4fbca2968d7c98f6ea7471d0f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_7.jpg","caption":"Figure 7. Schematic for $\\mathrm{ZnO}$ ALE using HF and TMA as reactants. TMA removes $\\mathrm{AlF}_3$ layer by ligand-exchange and then converts the surface of underlying $\\mathrm{ZnO}$ to an $\\mathrm{Al}_2\\mathrm{O}_3$ surface layer. Reproduced with permission from ref 30. Copyright 2017 American Chemical Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_7","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":3,"y":212,"width":665,"height":183},{"panel_id":"a","x":3,"y":21,"width":664,"height":177}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":669,"height":394,"image_format":"jpeg","image_sha256":"765cb92be482e5ca2d7bf33a4fcdf52b316383c25fc4590d190f85bce1f367e7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_2_ed4c292f633e74087a929d148bb49e4ae40cf8161b32264c5c29870d55832259.jpg","caption":"Figre3. t t the steps (b) through (f) will be repeated. The overall etch depth is produced by $n$ ALE cycles.","id":"train/atomic-layer-etching/experimental-usecase/2/ed4c292f633e74087a929d148bb49e4ae40cf8161b32264c5c29870d55832259","sample_id":"atomic-layer-etching/experimental-usecase/2/ed4c292f633e74087a929d148bb49e4ae40cf8161b32264c5c29870d55832259","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"},{"panel_id":"d","label":"conceptual diagram"},{"panel_id":"e","label":"conceptual diagram"},{"panel_id":"f","label":"conceptual diagram"},{"panel_id":"g","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This panel shows the initial clean substrate surface with available reactive sites prior to any precursor exposure, representing the starting state of the plasma-enhanced atomic layer etching or deposition cycle.\"},{\"panel_id\":\"b\",\"text\":\"In this panel, precursor molecules are introduced and adsorb onto the substrate surface, forming a chemisorbed layer through self-limiting surface reactions.\"},{\"panel_id\":\"c\",\"text\":\"This panel illustrates the purge step following precursor exposure, during which excess and weakly bound precursor molecules are removed from the chamber, leaving only the adsorbed surface layer.\"},{\"panel_id\":\"d\",\"text\":\"Here, a saturated adsorbed layer uniformly covers the substrate surface, indicating completion of the precursor adsorption step and readiness for activation.\"},{\"panel_id\":\"e\",\"text\":\"This panel depicts low-energy ion bombardment during plasma exposure, which selectively activates surface reactions by removing or modifying the adsorbed layer through ion-assisted processes.\"},{\"panel_id\":\"f\",\"text\":\"In this panel, a second purge step removes reaction byproducts and desorbed species generated during ion activation, preventing gas-phase reactions.\"},{\"panel_id\":\"g\",\"text\":\"The final panel shows the substrate after completion of one full cycle, with the surface reset for the next cycle and a controlled, layer-by-layer material modification achieved.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE cycle enables precise, angstrom-level control over material removal while minimizing ion-induced damage. This level of control is essential for fabricating nanoscale semiconductor devices, high-aspect-ratio structures, and other applications where conventional etching methods lack sufficient precision.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ALE removes material in discrete, self-limiting cycles, unlike continuous plasma etching.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Atomic-scale etch depth control, Reduced surface damage, Improved etch uniformity\"}]}]","bbox":[{"panel_id":"a","x":16,"y":19,"width":139,"height":299},{"panel_id":"b","x":178,"y":21,"width":153,"height":293},{"panel_id":"c","x":339,"y":90,"width":75,"height":248},{"panel_id":"d","x":421,"y":92,"width":164,"height":218},{"panel_id":"e","x":768,"y":45,"width":223,"height":289},{"panel_id":"f","x":763,"y":70,"width":72,"height":264},{"panel_id":"g","x":846,"y":129,"width":138,"height":186}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/ed4c292f633e74087a929d148bb49e4ae40cf8161b32264c5c29870d55832259.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/ed4c292f633e74087a929d148bb49e4ae40cf8161b32264c5c29870d55832259.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/Atomic Layer Etching at the Tipping Point An Overview.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1002,"height":364,"image_format":"jpeg","image_sha256":"2695f595af401b7b053cc92c577d1ae15a88ec1d848b78b5d66714c088ab2dce","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_2_figure_1.jpg","caption":"Figure 1. Schematic of one cycle of a typical ALD process to produce thin $\\mathrm{Al}_2\\mathrm{O}_3$ layers (redrawn after Potts and Kessels $^{37}$ ). The surface modification step ((b)-(d)) is based on self-limited adsorption of a reactive precursor, followed by pump-out. The steps ((e)-(f)) involve exposure to an oxidizing gas, e.g. water, $\\mathrm{O}_2$ plasma, etc, followed by pump-out and transform the precursor layer into roughly a monolayer of the final $\\mathrm{Al}_2\\mathrm{O}_3$ material. For the substrate (g) obtained after one ALD cycle, the steps (b) through (f) will be repeated. The overall deposited layer thickness is produced by $n$ ALD cycles.","id":"train/atomic-layer-etching/experimental-usecase/2/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/2/figure_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"},{"panel_id":"d","label":"conceptual diagram"},{"panel_id":"e","label":"conceptual diagram"},{"panel_id":"f","label":"conceptual diagram"},{"panel_id":"g","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This panel shows the initial hydroxyl-terminated substrate surface, where surface –OH groups act as reactive sites for precursor adsorption at the beginning of the ALD cycle.\"},{\"panel_id\":\"b\",\"text\":\"In this panel, precursor molecules containing –CH₃ ligands are introduced and react with surface –OH groups until saturation is reached, forming a chemisorbed layer and releasing reaction byproducts.\"},{\"panel_id\":\"c\",\"text\":\"This panel illustrates the purge step after precursor exposure, during which excess precursor molecules and gaseous byproducts are removed, leaving a stable adsorbed layer on the surface.\"},{\"panel_id\":\"d\",\"text\":\"Here, a uniformly saturated adsorbed precursor layer is shown on the substrate, indicating completion of the self-limiting adsorption step.\"},{\"panel_id\":\"e\",\"text\":\"This panel depicts exposure of the adsorbed layer to a reactive plasma gas, where energetic species react with the surface-bound ligands until saturation, converting the adsorbed layer into the desired solid material.\"},{\"panel_id\":\"f\",\"text\":\"In this panel, a second purge step removes residual reactive gas species and reaction byproducts formed during plasma exposure, preventing undesired gas-phase reactions.\"},{\"panel_id\":\"g\",\"text\":\"The final panel shows the regenerated surface with new –OH termination, ready for the next ALD cycle, demonstrating controlled layer-by-layer film growth.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Because ALD reactions are self-limiting and occur only at the surface, precursor molecules react uniformly wherever they reach, regardless of feature geometry. Purge steps prevent gas-phase reactions, allowing each cycle to deposit a controlled amount of material. This ensures excellent conformality and precise thickness control in complex three-dimensional structures.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The growth per cycle remains constant and does not increase further.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Reactive surface functional groups (e.g., –OH), Self-limiting chemisorption of precursor molecules, Complete purging between exposure steps, Regeneration of reactive surface sites after oxidation\"}]}]","bbox":[{"panel_id":"a","x":13,"y":96,"width":135,"height":321},{"panel_id":"b","x":151,"y":22,"width":194,"height":398},{"panel_id":"c","x":338,"y":171,"width":82,"height":209},{"panel_id":"d","x":421,"y":34,"width":163,"height":337},{"panel_id":"e","x":585,"y":13,"width":179,"height":363},{"panel_id":"f","x":767,"y":178,"width":69,"height":197},{"panel_id":"g","x":848,"y":164,"width":136,"height":231}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/Atomic Layer Etching at the Tipping Point An Overview.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1003,"height":422,"image_format":"jpeg","image_sha256":"59612883ee7510a45a287eff667f4b158aaf75684da9ab8f053fe670f38b0d16","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_2_figure_2.jpg","caption":"Figure 2. Schematic illustrating the thermal \"ALD window\" concept (redrawn after George $^{29}$ ).","id":"train/atomic-layer-etching/experimental-usecase/2/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/2/figure_2","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure schematically illustrates the thermal ALD window, showing how thickness growth per cycle depends on process temperature. In the central ALD window, surface reactions are self-limiting and yield constant growth per cycle. At low temperatures, condensation and incomplete reactions dominate, while at high temperatures, desorption and precursor decomposition lead to loss of ALD control.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Identifying the ALD window is critical because it defines the operating conditions where film growth is stable, uniform, and self-limiting. Operating within this window ensures reproducible material properties and precise thickness control, which are essential for semiconductor manufacturing and for extending ALD principles to atomic layer etching processes.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Growth per cycle becomes unstable due to condensation at low temperatures and decomposition or desorption at high temperatures.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Uniform monolayer-by-monolayer growth, Precise thickness control, High conformality, Reproducible film structure\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":294}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/Atomic Layer Etching at the Tipping Point An Overview.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":669,"height":294,"image_format":"jpeg","image_sha256":"c490cc04bea0743d43309d749d633d80353f41f96faee3021974192ebd11e086","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_2_figure_4.jpg","caption":"Figure 4. Schematic illustrating the concept of an \"ALE window\" located between the spontaneous chemical etching and the physical sputtering regimes. The presence of chemical reactant on the substrate surface enables directional etching of the material in a window of ion energies above the chemically enhanced etching energy threshold $E_{\\text{ceth}}$ and below the physical sputtering energy threshold $E_{\\text{psth}}$ , respectively. Spontaneous chemical etching of the reactant/substrate system interferes with this approach and is made negligible by reducing the temperature of the substrate sufficiently.","id":"train/atomic-layer-etching/experimental-usecase/2/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/2/figure_4","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure schematically illustrates the ALE window as a function of ion energy, positioned between spontaneous chemical etching at low ion energies and physical sputter etching at high ion energies. Within this window, chemically enhanced, directional etching occurs when the ion energy is above the chemical etching threshold (E₍etch₎) but below the physical sputtering threshold (E₍psh₎), enabling controlled atomic-scale material removal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Operating within the ALE window allows controlled, directional material removal by combining chemical surface modification with low-energy ion activation. This prevents uncontrolled chemical etching and excessive physical sputtering, enabling precise atomic-scale etching required for advanced semiconductor and nanofabrication applications.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Etching transitions from spontaneous chemical etching at low ion energy to physical sputter etching at high ion energy, with ALE occurring in between.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Directional etching, Atomic-scale thickness control, Chemically enhanced etching, Suppressed physical sputtering\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":272}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/Atomic Layer Etching at the Tipping Point An Overview.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":675,"height":272,"image_format":"jpeg","image_sha256":"22b7e8ada940ed122ec3d78d4caa2ac7354ff99085634c97da70ed817592d5aa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_2_figure_5.jpg","caption":"Figure 5. Schematic illustration of the dependence of etched thickness per cycle on exposure time for different pressures (i) - lowest pressure, (ii) - intermediate and (iii) - highest) and assuming negligible spontaneous etching. Self-limitation requires saturation surface coverage which at the highest pressure (iii) is achieved after the shortest exposure time. Alternatively, a plasma and production of radicals may be used to reduce the time required to achieve saturation surface coverage.","id":"train/atomic-layer-etching/experimental-usecase/2/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/2/figure_5","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure schematically illustrates the dependence of etched thickness per cycle on reactant exposure time under different reactant pressures. Curves (i), (ii), and (iii) represent increasing pressure conditions, showing that higher pressure leads to faster attainment of saturation surface coverage, which is required for self-limiting atomic layer etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Exposure Time of Substrate to Chemical Reactant | Thickness Loss Per Cycle |\\n|---|---|\\n|(i)| Saturation coverage |\\n|(ii)| | \\n|(iii)| |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Rapid achievement of saturation surface coverage reduces the required exposure time per cycle, improving process efficiency while maintaining atomic-scale etch control. This is particularly important for high-throughput manufacturing where precise, repeatable etching is required.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher reactant pressure leads to faster attainment of saturation surface coverage.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Constant etched thickness per cycle, Uniform surface modification, Self-limited reaction behavior\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":347}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/Atomic Layer Etching at the Tipping Point An Overview.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":675,"height":347,"image_format":"jpeg","image_sha256":"34f47ded781eb03dac56720c69d261f62202572b80c9468a1903d30b62363179","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_26_fig_1.jpg","caption":"Fig. 1. (a) Cross section schematic of the GaN FEG-HEMTs grown on (111) Si substrate. (b) Ferroelectric gate stack structure.","id":"train/atomic-layer-etching/experimental-usecase/26/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/26/fig_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":310,"y":5,"width":261,"height":205},{"panel_id":"a","x":0,"y":3,"width":298,"height":207}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/A Normally-Off GaN MIS-HEMT Fabricated.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":572,"height":211,"image_format":"jpeg","image_sha256":"4578fd02ee7b6904f558f6f3ee66735b95d7290d5aa0049c27871ae027d6c5f1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_29_fig_6.jpg","caption":"FIG. 6. NBE signal intensities of etched AlGaN/GaN with and without quartz windows: (a) sample setup, (b) NBE signal intensity of AlGaN, and (c) NBE signal intensity of GaN.","id":"train/atomic-layer-etching/experimental-usecase/29/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/29/fig_6","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"bar chart"},{"panel_id":"c","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The diagram shows the different device stacks with and without quartz windows, including the different effects of different plasma species.\"},{\"panel_id\":\"b\",\"text\":\"The bar chart compares the NBE signal intensity across three conditions: initial state, with quartz window (QW), and without quartz window.\"},{\"panel_id\":\"c\",\"text\":\"The bar chart compares the NBE signal intensity across three conditions: initial state, with quartz window (QW), and without quartz window.\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"|Class| NBE Signal Intensity (a.u.) | \\n|---|---|\\n| Initial | 1.0 |\\n|w/ QW |0.7|\\n|w/o QW |0.15|\"},{\"panel_id\":\"c\",\"text\":\"|Class| NBE Signal Intensity (a.u.) | \\n|---|---|\\n| Initial | 1.0 |\\n|w/ QW |0.65|\\n|w/o QW |0.5|\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The photons penetrate deeper into the GaN, therefore affecting it more.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The UV photons fully pass through the AlGaN layer in both cases.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ions have directional velocity towards the substrate resulting in a penetration depth. Radicals do not have this directional character and just react at the top surface.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The photons penetrate deeper as the quartz window does not longer absorb some of them, however the window likely absorbs less than the AlGaN/GaN stack.\"}]}]","bbox":[{"panel_id":"c","x":0,"y":783,"width":536,"height":359},{"panel_id":"b","x":0,"y":372,"width":539,"height":376},{"panel_id":"a","x":3,"y":45,"width":533,"height":291}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/Atomic layer etching of AlGaN using Cl2 and Ar gas.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":539,"height":1142,"image_format":"jpeg","image_sha256":"e69db7d4194ab890b789303e0c76e3bdebb7f54a3fbc82d964b7535c78e844ea","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_33_fig1.jpg","caption":"FIG.1. Overview of thermal ALE of TiN films consisting of native oxide removal and the formation and desorption of a surface-modified layer. A $\\mathrm{Cl}_2 / \\mathrm{Ar}$ downstream plasma is used for the surface modification, and the modified layer is removed by IR annealing.","id":"train/atomic-layer-etching/experimental-usecase/33/fig1","sample_id":"atomic-layer-etching/experimental-usecase/33/fig1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a process involving TiN surface modification through HF exposure with IR annealing.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows a step-by-step process of surface modification and desorption of TiN using Cl2 plasma treatment resulting in a surface-modified layer that undergoes desorption upon IR annealing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that the Cl2 plasma modifies more than a monolayer, this can later be seen with EPC data.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A possible species could be TiCl4, which is also used in some processes as a precursor gas.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is likely that the IR radiation penetrates into the TiN film.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The HF exposure with IR annealing is selective for TiO2 as no TiN is removed upon exposure.\"}]}]","bbox":[{"panel_id":"b","x":0,"y":281,"width":663,"height":336},{"panel_id":"a","x":0,"y":4,"width":403,"height":265}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/Atomic layer etching of titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":664,"height":620,"image_format":"jpeg","image_sha256":"c82b0c88cbf702e83228e396b993d37ce57cd581ceb88829de8084ac2dec4586","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_33_fig_11.jpg","caption":"FIG. 11. Proposed mechanism of ALE for TiN films involving the formation and desorption of a $\\mathsf{TIC}_{\\mathsf{X}}$ based surface-modified layer.","id":"train/atomic-layer-etching/experimental-usecase/33/fig_11","sample_id":"atomic-layer-etching/experimental-usecase/33/fig_11","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a proposed etch process of TiN with Cl radicals and IR annealing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows the removal of 3 monolayers.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The oxygen can come from impurities in the film that were formed during deposition.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Between all the given images a purge step is likely added to remove species from the gas phase.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The IR annealing provides the required energy to TiCl4 species to become volatile and desorb from the surface.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":1,"width":668,"height":460}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/Atomic layer etching of titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":669,"height":461,"image_format":"jpeg","image_sha256":"297d343d4b54bb4e04d99e45a802181faa239336d69eb4a51b814082a6374200","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_11.jpg","caption":"Fig. 11. Schematic flow of the cyclic $\\mathrm{C_4F_8}$ and $\\mathrm{O_2}$ plasma etching mechanism. (a) The $\\mathrm{C_4F_8}$ plasma modified the surface of the $\\mathrm{TiO_2}$ . (b) CF polymer formed on the modified surface. $\\mathrm{O_2}$ plasma etched (c) the CF polymer and then (d) the modified layer.","id":"train/atomic-layer-etching/experimental-usecase/36/fig_11","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_11","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":4,"width":1200,"height":467}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1203,"height":473,"image_format":"jpeg","image_sha256":"f15e99ae66d4d7ca574a84ca0e6623e29150a24bd80705b70df40480ba44b0b6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_38_58930c318f0c9c1269db894d23541de4e2601ecd4dd5080cc8bd7171457d9036.jpg","caption":"","id":"train/atomic-layer-etching/experimental-usecase/38/58930c318f0c9c1269db894d23541de4e2601ecd4dd5080cc8bd7171457d9036","sample_id":"atomic-layer-etching/experimental-usecase/38/58930c318f0c9c1269db894d23541de4e2601ecd4dd5080cc8bd7171457d9036","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":3,"width":665,"height":325}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/58930c318f0c9c1269db894d23541de4e2601ecd4dd5080cc8bd7171457d9036.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/58930c318f0c9c1269db894d23541de4e2601ecd4dd5080cc8bd7171457d9036.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/High synergy atomic layer etching of AlGaNGaN.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":666,"height":331,"image_format":"jpeg","image_sha256":"ae261a9c70bf29e014b23226cde6353e7c06f544bc8442f5d75ab245616ae36a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_39_fig1.jpg","caption":"FIG.1. (a)(d) ALE process for MgO-doped LN. (a) A hydrogen plasma exposure leads to (b) a hydrogen-rich modified layer at the top of the sample. (c) A subsequent $\\mathsf{SF}_6 / \\mathsf{Ar}$ plasma exposure yields volatile species. (d) A final purge completes the cycle. (e) Microscope image ( $10\\times$ magnification) of the developed lithography pattern on the LN wafer. The dotted line indicates the direction of AFM scan for etch depth measurements.","id":"train/atomic-layer-etching/experimental-usecase/39/fig1","sample_id":"atomic-layer-etching/experimental-usecase/39/fig1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"},{"panel_id":"d","label":"conceptual diagram"},{"panel_id":"e","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Conceptual schematic of the H₂ plasma exposure step initiating the ALE cycle on MgO-doped LN.\"},{\"panel_id\":\"b\",\"text\":\"Conceptual schematic of the purge step following H₂ plasma exposure, resulting in a hydrogen-modified surface layer.\"},{\"panel_id\":\"c\",\"text\":\"Conceptual schematic of the SF₆/Ar plasma exposure step, which the caption indicates produces volatile reaction species.\"},{\"panel_id\":\"d\",\"text\":\"Conceptual schematic of the final purge step completing one ALE cycle.\"},{\"panel_id\":\"e\",\"text\":\"Optical microscope image (10× magnification) showing the developed lithography pattern on the LN wafer, with a 400 µm scale bar and an indicated AFM scan direction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plasma exposure in subfigure (a) uses H₂ and is described as creating a hydrogen-rich modified surface layer. In contrast, subfigure (c) shows SF₆/Ar plasma exposure, which the caption states yields volatile species. The two steps therefore employ different gas chemistries and serve different roles within the ALE cycle.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A developed lithography pattern on the LN wafer.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A purge step following H₂ plasma exposure.\"}]}]","bbox":[{"panel_id":"a","x":54,"y":15,"width":227,"height":161},{"panel_id":"b","x":357,"y":18,"width":222,"height":160},{"panel_id":"c","x":51,"y":207,"width":224,"height":149},{"panel_id":"d","x":354,"y":218,"width":226,"height":134},{"panel_id":"e","x":701,"y":42,"width":377,"height":310}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/images/fig1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/Isotropic atomic layer etching of MgO-doped lithium niobate.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1081,"height":358,"image_format":"jpeg","image_sha256":"636c326c1fcb5cb458cf257fd90ad8c0488c7b3b590548937767947fd2349e5c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_7_figure_1.jpg","caption":"Figure 1. Several approaches can be adopted for thin film deposition and etching for vapor phase based techniques. (a) In a continuous process, the process A is started at $t = 0$ and stopped after the deposited or etched thickness has been reached. In this basic approach, the control of the deposited or etched thickness is limited as the deposited or etched thickness is \"flux-controlled\". Variations in the process conditions easily lead to variations in the flux of species and hence, in the final deposited or etched thickness, both over multiple deposition runs (i.e., wafer-to-wafer) or over the substrate area (i.e., within-wafer). (b) In a pulsed process, the continuous process is basically divided up into pulses and the pulses are repeated until the deposited or etched thickness has been reached. When the pulse length is well-defined, pulsing provides typically additional control over the continuous process but due to the flux-controlled nature similar drawbacks as in the continuous process hold. (c) Atomic layer processes are \"surface-controlled\" as they are based on self-limiting surface chemistries during, e.g., two half-reactions (A and B) that make up a full cycle. Every cycle yields a well-defined, fixed thickness that is deposited or etched when the time per cycle for the half-cycles is sufficiently long (i.e., when working in \"saturated conditions\"). This means that the thickness of the deposited or etched film can be controlled very accurately by choosing the right number of cycles. This holds when comparing one deposition run to another but it also leads to an excellent uniformity over the full substrate. Ideal atomic layer processes are very independent of variations in timings or process conditions.","id":"train/atomic-layer-etching/experimental-usecase/7/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/7/figure_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The continuous process diagram shows thickness increasing with time during constant exposure to process A. Because the process is flux-controlled, small changes in gas flow or conditions can strongly affect the final thickness.\"},{\"panel_id\":\"b\",\"text\":\"The pulsed process diagram shows that exposure to process A is divided into repeated pulses. This gives better timing control than a continuous process, but the thickness per pulse still depends on how much material arrives at the surface.\"},{\"panel_id\":\"c\",\"text\":\"The atomic layer process diagram shows alternating A and B steps that react only with the surface. Once each step is saturated, every cycle adds the same fixed amount of material, allowing very accurate thickness control by counting cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In continuous processes, the total deposited or etched thickness is directly proportional to the integral of the precursor flux over time. Any fluctuation in process parameters like flow rate, pressure, or temperature immediately changes this flux and, consequently, the instantaneous growth or etch rate. Since there is no self-limiting step to cap the reaction, these variations accumulate directly, leading to poor control over the final thickness and non-uniformity.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-In both cases, thickness increases in a linear way.\\n-Both processes are controlled by precursor flux reaching the surface.\\n-Pulsing improves timing control but does not remove flux dependence.\\n-Variations in gas delivery still affect final thickness in both cases.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It shows that each half-reaction reaches saturation, so growth depends on surface reactions rather than precursor flux.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In atomic layer processes, each cycle deposits or removes a fixed amount of material once the surface is saturated. This makes the result insensitive to small changes in gas flow, pressure, or timing. Because every surface site reacts in the same way, thickness remains uniform across the wafer and from run to run.\"}]}]","bbox":[{"panel_id":"c","x":758,"y":33,"width":305,"height":636},{"panel_id":"b","x":407,"y":30,"width":315,"height":639},{"panel_id":"a","x":30,"y":28,"width":315,"height":626}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/Atomic Layer Etching What CanWe Learn from Atomic Layer Deposition.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1075,"height":684,"image_format":"jpeg","image_sha256":"f228398b2d3583a05ee02d72ea56dfc19617d4e852f020ac2793185bb0f0f57d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_7_figure_4.jpg","caption":"Figure 4. Schmatic ilstration of the key feures for (a) atomic layer etching (ALEt) and (b) atomic laye deposition (ALD). The proceses yield a precise control of the thickes chd (ch conol) d ostid gow control) per cly for A and LD, reectively. The ater holds for the ustrate surface such that the unforty is excelent. When processing a subtrate with thre-dimsonal feures, the situation for AEt and ALD is however diffeent. For ALD, the coverage of thre-dimsonal feures is simiar thoghout the feures and comparable to the planar surface, hce the conformality of ALD-preared films is exellnt. For etching proceses such as ALEt, there is generally interest in etching vertical feares which requires anisotropic proceses in which only material is removed from the bottom of the vertical feature. In other cases, isotropic etching can be desired. In this case, the material should be etched equally on all exposed surfaces, indednt of the otion of the local sence on the subtrate. For ALEt, alo the selectivity of the etch process is key. Idally, only the to-be-etched material should be removed and not masking materials or materials lying underneath the to-be-etched material.","id":"train/atomic-layer-etching/experimental-usecase/7/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/7/figure_4","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The schematic illustrates how ALEt enables atomic-layer-controlled removal while emphasizing selectivity and directional behavior. Anisotropic ALEt removes material preferentially from horizontal surfaces, whereas isotropic ALEt removes material uniformly from all exposed surfaces. Uniformity and etch control are highlighted as key outcomes of the layer-by-layer, surface-limited process.\"},{\"panel_id\":\"b\",\"text\":\"The ALD schematic shows atomic-layer addition with excellent uniformity on planar substrates and high conformality inside three-dimensional structures. Because ALD relies on self-limiting surface chemistry, growth per cycle remains consistent across the feature geometry, enabling precise thickness control and uniform coverage of high-aspect-ratio structures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Planar surfaces show uniform material addition due to self-limiting adsorption.\\n-Sidewalls and bottom surfaces of recessed features receive comparable dose and achieve the same growth per cycle.\\n-Overall conformality is preserved across the entire geometry, yielding uniform thickness independent of feature depth.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ALD conformality allows uniform coating of sidewalls and bottoms of deep features. This prevents thinning or void formation in recessed regions. Such coverage is critical for reliable electrical and mechanical performance in advanced devices.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Horizontal surfaces undergo enhanced removal during anisotropic ALEt because the activation step is directionally biased, whereas isotropic ALEt removes material at similar rates on both horizontal and vertical surfaces.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Selectivity ensures that only the intended material is removed during etching. This protects masking layers and underlying films from unintended damage. High selectivity is essential for maintaining device integrity in multilayer structures.\"}]}]","bbox":[{"panel_id":"b","x":13,"y":8,"width":1066,"height":410},{"panel_id":"a","x":13,"y":8,"width":1066,"height":410}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/Atomic Layer Etching What CanWe Learn from Atomic Layer Deposition.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1084,"height":728,"image_format":"jpeg","image_sha256":"d3183e4f6c0ed60f546177343f5c4c49f0084b98f3086da20accf13e6f75b342","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_7_figure_5.jpg","caption":"Figure 5. Approaches to realize area-selective ALD [(a), (c) and (e)] and area-selective ALEt [(b), (d) and (f)]. (a) and (b) show an approach that can be labeled \"inherently selective\". The substrate is composed of several materials and on the surface of some of the materials, deposition or etching does (virtually) not occur for the ALD or ALEt surface chemistry chosen. The selectivity is therefore, inherent to the specific ALD or ALE process. (c) and (d) show an approach that can be labeled as \"selective by deactivation\" since part of the substrate is deactivated by a layer of molecules or a film (mask). No etching or deposition takes place at the parts of the surface that are deactivated. This approach is standard for etching. It is not problematic if the mask material is somewhat etched as long as it etches much slower than the to-be-etched material. (e) and (f) show an approach that can be labeled \"selective by activation\". Film growth or etching only initiates on those parts of the surface that are activated, e.g., by a focused electron or ion beam that locally interacts with the surface. For ALD, processes exist in which this activation only needs to be done before the first cycle; $^{51}$ for ALEt, the local activation step needs to take place every cycle. In all the displayed cases for ALD [(a), (c) and (e)], the area-selective ALD processes depend on an effect known as nucleation delay. The film material easily deposits on some surfaces whereas on other areas, the film hardly nucleates or it takes much longer for the film to nucleate. For area-selective ALEt approaches (b) and (d), selectivity has the same meaning as that typical for etch processes. The to-be-etched material should etch much faster than any other material used. In (d), the selectivity should preferably approach infinity. Furthermore, it is noted that the possibility exists for designing area-selective ALEt approaches by combining ALEt and ALD. For example, area-selective ALD films can serve as a local mask.","id":"train/atomic-layer-etching/experimental-usecase/7/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/7/figure_5","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"},{"panel_id":"d","label":"conceptual diagram"},{"panel_id":"e","label":"conceptual diagram"},{"panel_id":"f","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The panel illustrates an inherent selectivity mechanism for area-selective ALD in which certain substrate regions support rapid nucleation while others show negligible nucleation, resulting in selective film growth without masking.\"},{\"panel_id\":\"b\",\"text\":\"The analogous inherent selectivity concept for ALEt is shown, where the chosen etch chemistry removes one material significantly faster than adjacent materials, producing selective etching without additional activation or masking.\"},{\"panel_id\":\"c\",\"text\":\"This panel shows selective deposition achieved by surface deactivation. A deactivating layer or molecular film blocks precursor adsorption, preventing ALD growth on protected areas while allowing nucleation on unmasked regions.\"},{\"panel_id\":\"d\",\"text\":\"Selective ALEt by deactivation is illustrated: a masking layer suppresses etching on the protected surfaces, enabling selective removal only from the exposed material. Etch selectivity depends on the much higher etch rate of the target material relative to the mask.\"},{\"panel_id\":\"e\",\"text\":\"The panel depicts selective ALD by activation, where only surfaces locally activated—e.g., by focused electron or ion beams—initiate nucleation. Activation is required only before the first ALD cycle for many processes.\"},{\"panel_id\":\"f\",\"text\":\"Selective ALEt by activation is shown, in which activation must occur each cycle to enable removal on targeted regions. Unactivated surfaces remain chemically inert and do not undergo material removal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"High etch selectivity ensures that the target material is removed much faster than the masking layer or surrounding materials. This prevents degradation of the mask during repeated cycles. Strong selectivity is essential to maintain pattern fidelity and protect underlying device structures.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In ALEt, each cycle removes the surface layer that was activated in the previous step. This means the surface loses its reactive state after every cycle. To continue selective removal, the surface must be reactivated again before the next cycle.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Inherent selectivity occurs because the ALD precursor nucleates easily on one surface material but shows little or no nucleation on another material.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Inherent selectivity in ALD arises from nucleation delay differences between surface materials, allowing growth on some regions while suppressing it on others.\"}]}]","bbox":[{"panel_id":"d","x":468,"y":179,"width":544,"height":257},{"panel_id":"b","x":455,"y":-10,"width":561,"height":215},{"panel_id":"c","x":-4,"y":184,"width":476,"height":206},{"panel_id":"e","x":8,"y":407,"width":447,"height":232},{"panel_id":"f","x":464,"y":386,"width":565,"height":257},{"panel_id":"a","x":12,"y":-5,"width":430,"height":189}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/Atomic Layer Etching What CanWe Learn from Atomic Layer Deposition.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1022,"height":658,"image_format":"jpeg","image_sha256":"d01b62c1dedbcf3b373e8263f970148cf43f5e8bd221a0dfe515ca38cdc675c3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_7_figure_6.jpg","caption":"Figure 6. A schematic representation of various types of cycles for $\\mathrm{ALD}^{48}$ that can also be employed for ALEt: (a) a regular process, (b) a multistep process and (c) a supercycle process. In a multistep process, one or more additional steps are added to the cycle to form, for instance, an ABC process. In a supercycle, the steps of two regular processes are combined where $m$ cycles of the first process are followed by $n$ cycles of the second process. The variables $m$ and $n$ can be chosen so as to obtain the desired properties for the ALD or ALEt process. Figure 5. Approaches that are being used to increase the throughput of ALD reactors that, in principle, can also be adopted for ALEt reactors. In (a), the approach is shown where the process is not operated under fully saturated conditions. When working with slightly shorter exposure times, the cycle time can significantly be reduced (e.g., by a factor of two) while the thickness deposited or removed is only slightly reduced. For many processes and device architectures, the level of growth for etch control remains acceptable. In (b), the so-called spatial atomic layer process is shown. The cycles are not carried out in the time domain but in the spatial domain. It is noted however, that developing appropriate processes for spatial ALD is not straightforward and this is probably even more so for spatial ALEt.","id":"train/atomic-layer-etching/experimental-usecase/7/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/7/figure_6","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"},{"panel_id":"d","label":"phase diagram"},{"panel_id":"e","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The schematic shows a regular ALD/ALEt cycle (AB)m in which self-limiting A and B half-reactions are alternated for m cycles. Each cycle delivers a fixed growth or etch per cycle once saturated.\"},{\"panel_id\":\"b\",\"text\":\"The multistep cycle (ABC)m introduces additional half-reactions, enabling tailoring of material composition or surface chemistry by adding a third reactant step while retaining cyclic self-limiting behavior.\"},{\"panel_id\":\"c\",\"text\":\"The supercycle schematic illustrates periodic repetition of two different regular processes. By tuning m and n for the (A1B1)m(A2B2)n combination, the final material properties or average growth/etch rate can be engineered with nanometer-scale precision.\"},{\"panel_id\":\"d\",\"text\":\"The bottom-left diagram explains throughput enhancement via reduced exposure times. Operating slightly below saturation shortens cycle duration while sacrificing only a small fraction of growth or etch per cycle, offering acceptable control in processes tolerant to minor deviations from saturation.\"},{\"panel_id\":\"e\",\"text\":\"The spatial ALD/ALE concept depicts precursor, co-reactant, and purge zones arranged along a substrate translation path. Instead of time-sequenced half-reactions, the substrate encounters spatially separated reaction environments, enabling high-throughput continuous processing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Spatial processes increase throughput because reactions happen at different locations instead of different times. The substrate moves through zones for precursor, purge, and co-reactant exposure without stopping. This removes waiting time between steps and allows faster processing while still keeping surface-controlled reactions.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"When exposure is shorter than saturation, the surface does not fully react, so less material is added or removed per cycle.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Regular cycles repeat the same A–, B steps with fixed behavior.\\n, -More complex cycles introduce additional steps or combinations to tune properties.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A regular cycle alternates one A step and one B step and repeats this sequence m times.\"}]}]","bbox":[{"panel_id":"d","x":4,"y":533,"width":377,"height":472},{"panel_id":"b","x":265,"y":42,"width":292,"height":371},{"panel_id":"c","x":587,"y":38,"width":383,"height":380},{"panel_id":"e","x":523,"y":540,"width":444,"height":463},{"panel_id":"a","x":7,"y":40,"width":227,"height":374}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/Atomic Layer Etching What CanWe Learn from Atomic Layer Deposition.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":970,"height":1008,"image_format":"jpeg","image_sha256":"990585e067939e7307db04231b1d97a3861ab089770d287beacef5d1272691fa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_5.jpg","caption":"Fig. 5. A 2D side view of the dynamic mesh for the spatial reactor design with $0.25 \\text{mm}$ gap distance.","id":"train/atomic-layer-etching/simulation-usecase/16/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_5","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image illustrates a sequence of steps involving nitrogen (N₂), vacuum, hydrofluoric acid (HF), and trimethylamine (TMA) treatments on a moving substrate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There is a minimum of five gas slits, most of them are used for the carrier and purge gas nitrogen.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the substrate is likely way bigger than the distance between slits, meaning that not the entire substrate is exposed to a single gas at a time.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There is no actual vacuum as there is a constant flow of gas there.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If TMA is dosed first, there has not yet been modification so there will be no etching.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":8,"width":1003,"height":240}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1003,"height":248,"image_format":"jpeg","image_sha256":"4fa40dab31e8ddbb597ffa5e192f88fe2f02afcfd7aeca7e0e499320700741a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_1.jpg","caption":"FIG. 1. Schematic of the PALE process. Completion of 1 cycle (passivation followed by etch) results in removal of a single monolayer. The cycle is repeated to etch many monolayers. $\\epsilon_{t1}$ is the threshold for chemically enhanced sputtering and $\\epsilon_{t2}$ is the threshold for physical sputtering.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":486}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":675,"height":486,"image_format":"jpeg","image_sha256":"dc54f0aa03693c796231b70ba8e332e525e0f2adf4dacce2fa04094a21cafde5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_12.jpg","caption":"FiG. 12. (Color online) Predicted etch profiles for a 10:1 aspect ratio $\\mathrm{SiO}_2$ -over-Si trench using $\\mathrm{Ar / c - C_4F_8}$ followed by Ar PALE for the first 3 cycles. There are initially $20~\\mathrm{ML}$ of $\\mathrm{SiO}_2$ on top of Si. The feature after the first passivation step is shown in frame 2 and following the first 3 cycles in frames 3-5. During each cycle, $1\\mathrm{ML}$ of $\\mathrm{SiO}_2$ is removed.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_12","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_12","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":581,"height":988}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":581,"height":988,"image_format":"jpeg","image_sha256":"794c77fb78ca9b19418530251f6b30868d9674216ad67d7dbe15688091be0720","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_13.jpg","caption":"FiG. 13. (Color online) Predicted etch profiles for a 10:1 aspect ratio $\\mathrm{SiO}_2$ -over-Si trench using $\\mathrm{Ar / c - C_4F_8}$ followed by Ar PALE. The bottom of feature is cleared in 20 cycles of PALE. Thick polymer layers buildup on the sidewall due to the redeposition of sputtered polymer and etch products from the bottom of the feature. This leads to narrowing of the feature.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_13","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_13","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":570,"height":761}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":570,"height":761,"image_format":"jpeg","image_sha256":"8eb8157edeef38dc32e6fccadc8af22855d5028b9fc51edf12e8b97bfedb0ef7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_14.jpg","caption":"FIG. 14. (Color online) Surface roughness as a function of ion energies during step 2 of $\\mathrm{SiO}_2$ PALE. (a) Final profiles for etching steps carried out with ion energies of 75, 100, and $120\\mathrm{eV}$ . (b) Surface roughness (in monolayers) increases with ion energies while decreasing cycle time. As the ion energies increase, the etch mechanism transitions from being chemically dominated to being physically dominated. The larger roughness at lower cycle time results from there being incomplete passivation during step 1.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_14","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_14","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":2,"width":367,"height":454},{"panel_id":"b","x":3,"y":481,"width":368,"height":368}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":372,"height":853,"image_format":"jpeg","image_sha256":"0f5edc1e4518eeb8e8bd34c67824865c040d8c51bfe6ac73f5b146768e7c25bd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_15.jpg","caption":"FiG. 15. (Color online) Etch profiles for $\\mathrm{Ar / c - C_4F_8}$ and Ar PALE etching of a $\\mathrm{SiO}_2$ -over-Si self-aligned contact. The etch begins with $20~\\mathrm{ML}$ of Si aligned with $20~\\mathrm{ML}$ of $\\mathrm{SiO}_2$ A highly selective etch of the contact is achieved in 20 cycles of PALE using the IEADs shown in Fig. 11. The sidewall of the Si is less prone to damage due to passivation by redeposited etch products.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_15","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_15","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":575,"height":961}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":575,"height":961,"image_format":"jpeg","image_sha256":"b95ea5c67fc167144f088164632eaf63b8fa09c8bf8a5f734cebea7820bcf8f0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_18.jpg","caption":"FIG. 18. (Color online) Etch profiles for a 10:1 aspect ratio $\\mathrm{SiO}_2$ -over-Si trench during the main etch process. Microtrenching causes the Si at the sides of the trench to be exposed first.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_18","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_18","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":378,"height":525}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_18.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_18.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":378,"height":525,"image_format":"jpeg","image_sha256":"0bbe7e033d17a8138bac2625a6962bfdbad498e1c7329410e99ba4a0938affbe","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_19.jpg","caption":"FIG. 19. (Color online) Predicted etch profile for the over-etch of the $\\mathrm{SiO}_2$ -Si trench using an $\\mathrm{Ar} / \\tau \\mathrm{c}_{41}\\mathrm{F}_{8}$ nonsinusoidal PALE. The feature is cleared in 15 PALE cycles yielding an effective etch rate of $4 - 5\\mathrm{ML}$ cycle. The polymerizing radicals and low energy ions not only contribute to increased etching rates but also limit the damage to underlying Si. Note that the underlying Si is first exposed after 9 cycles of PALE.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_19","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_19","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":573,"height":897}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_19.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_19.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":573,"height":897,"image_format":"jpeg","image_sha256":"d6c12ebf2f9736741f2df6bab13671766b831fdff61b9ed097417ebfcd61c5a1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_20.jpg","caption":"FiG. 20. (Color online) Surface roughness and number of PALE cycles to clear the feature as a function of ion energies during step 2 of PALE. (a) Final etch profiles for step 2 ion energies of 80 and $120\\mathrm{eV}$ . (b) Surface roughness increases with increasing ion energies.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_20","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_20","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":46,"y":3,"width":371,"height":250},{"panel_id":"b","x":3,"y":280,"width":478,"height":399}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_20.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_20.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":481,"height":681,"image_format":"jpeg","image_sha256":"2dcc3f38ff347ba8f112eabe7bda9e902d891206c760f5301a74256102faca2e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_4.jpg","caption":"FiG. 4. (Color online) Etch profiles using PALE at the top corner of a 10:1 aspect ratio Si-FinFET using $\\mathrm{Ar / Cl}_2$ step 1 followed by Ar (step 2). The mesh resolution is $3\\mathrm{\\AA}$ . After 1 cycle, approximately $1\\mathrm{ML}$ is removed from both axial and lateral directions. After 3 cycles, $3\\mathrm{ML}$ were removed in the lateral direction but $4\\mathrm{ML}$ were removed in the axial direction.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_4","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":375,"height":672}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":375,"height":672,"image_format":"jpeg","image_sha256":"74b171ac204a0c09d16e3832a937d1c4e87962d0e07c8979d8d5ca27656f295c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_5.jpg","caption":"FIG. 5. (Color online) Etch profiles using PALE at the bottom corner of a 10:1 aspect ratio Si-FinFET using $\\mathrm{Ar / Cl}_2$ (step 1) followed by Ar (step 2). The mesh resolution is $3\\mathrm{\\AA}$ . The original height of the bottom surface is indicated by the arrow. Nonuniformities during a given cycle propagate to subsequent cycles.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_5","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":381,"height":636}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":381,"height":636,"image_format":"jpeg","image_sha256":"bb8bd98ffe19c1702c25ef13192917be5c64ca404da88e1c4719035f3467af38","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_6.jpg","caption":"FIG. 6. (Color online) Surface roughness as a function of ion energy during step 1 of PALE. (a) Final etch profiles of the top corner of the Si-FinFET for passivation steps carried out with ion energies of 15, 25, and $40 \\mathrm{eV}$ . The arrows indicate the original height of the feature. (b) Surface roughness (in monolayers) increases with ion energies during step 1.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_6","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"spectra chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":4,"width":370,"height":277},{"panel_id":"b","x":0,"y":279,"width":373,"height":345}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":373,"height":625,"image_format":"jpeg","image_sha256":"7cad9ca2054ca38ce1331019ab873db74fe3979b1c24436a0fc59a65b09328f2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_7.jpg","caption":"FIG. 7. (Color online) Surface roughness as a function of exposure time, $\\tau$ , for passivation during step 1 for Si PALE. A value of $\\tau = 1$ corresponds to exposure time of approximately 1 s with the IEADs shown in Fig. 3. (a) Upper left corner of Si-FinFET after 1 cycle. (b) Surface roughness (in monolayers) increases with $\\tau$ due to increased stochastic etching.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_7","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"spectra chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":3,"width":373,"height":276},{"panel_id":"b","x":1,"y":277,"width":370,"height":348}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":375,"height":625,"image_format":"jpeg","image_sha256":"d7470a929c65b05f94ecb0daecff42080e44cd080879213ed671e0c993ad33a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_8.jpg","caption":"FIG. 8. (Color online) Etch profiles for a 5:1 aspect ratio Si-over- $\\mathrm{SiO}_2$ feature using an etching recipe which combines a conventional main etch followed by PALE for a soft landing. The main etch terminates with the taper shown in frame 2. The remaining feature is etched in 25 cycles of PALE with sufficient selectivity that damage to the underlying $\\mathrm{SiO}_2$ is limited to the first monolayer. (The number of PALE cycles is the number at the top of the trench.)","id":"train/atomic-layer-etching/simulation-usecase/19/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_8","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":372,"height":964}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":372,"height":964,"image_format":"jpeg","image_sha256":"538a79435f67debe340a8630868365d401d4e52a550da6eec0282aa3a04e947c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_23_fig_6.jpg","caption":"FIG. 6. Classification of ALE by directionality. Because thermal ALE uses nondirectional species both in the modification and removal step, the result is an isotropic etching profile. Data reproduced from Ref. 5.","id":"train/atomic-layer-etching/simulation-usecase/23/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/23/fig_6","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":1,"width":1066,"height":653}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/Review Paper -- Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1081,"height":658,"image_format":"jpeg","image_sha256":"8db141a595d45daaa07a5559496449ffd139da87894da5f89b04d7a8b0bdc00f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_24_fig_7.jpg","caption":"Fig. 7. Schematic of proposed reaction mechanism for HF/TMA thermal ALE ZnO thin film. Reproduced from Ref. [33].","id":"train/atomic-layer-etching/simulation-usecase/24/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/24/fig_7","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":3,"y":2,"width":895,"height":248},{"panel_id":"a","x":3,"y":280,"width":890,"height":233}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/Review Paper -- Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":900,"height":520,"image_format":"jpeg","image_sha256":"af55b477cc87012d1674837f8e4fec3acbe90518f908ced29ecbf67826407376","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_26_fig1.jpg","caption":"FIG.1. Single cycle of Si PA-ALE by Cl adsorption and $\\mathsf{Ar}^+$ ion irradiation. Each cycle consists of the adsorption step, where the Si surface is modified by incident Cl atoms and/or ions, and the desorption step, where the Cl modified surface is removed by low-energy $\\mathsf{Ar}^+$ ion impact. Here, gray, orange, and blue spheres represent Si, Cl, and Ar atoms (or ions), respectively.","id":"train/atomic-layer-etching/simulation-usecase/26/fig1","sample_id":"atomic-layer-etching/simulation-usecase/26/fig1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":4,"width":1176,"height":462}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/Surface damage formation during atomic layer etching of silicon with chlorine adsorption.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1186,"height":467,"image_format":"jpeg","image_sha256":"0a370d38438803a3b478574823f91df4d3b02cd4c3930254bb633f80db6b707d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_10.jpg","caption":"Fig. 10. Plan view atomistic structures of the bulk phase: (a) the initial $2 \\times 2 \\times 1$ supercell of expanded alpha- $\\mathrm{AlF_3}$ , $\\mathrm{Al_{24}F_{72}}$ , (b) the amorphous $\\mathrm{Al_{24}F_{72}}$ structure after melt-quenching using AIMD simulation, and (c) the final amorphous $\\mathrm{Al_{24}F_{72}}$ after geometry optimization by DFT.","id":"train/atomic-layer-etching/simulation-usecase/29/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_10","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":42,"width":230,"height":414},{"panel_id":"b","x":278,"y":48,"width":257,"height":411},{"panel_id":"c","x":587,"y":43,"width":220,"height":397}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":808,"height":461,"image_format":"jpeg","image_sha256":"3688d8834d588c8e4c3e213115821a0c3ae0676a3ccbbed19a552b7d11228a70","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_11.jpg","caption":"Fig. 11. Evolution of atomistic structures during the optimization of surface $-\\mathrm{FH}$ coverage on the $\\mathrm{a - AlF_3}$ slab model. The most exothermic reaction $(\\Delta E)$ and desorption $(E_{\\mathrm{des}})$ energies are also displayed in eV.","id":"train/atomic-layer-etching/simulation-usecase/29/fig_11","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_11","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":3,"width":1199,"height":406}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1208,"height":414,"image_format":"jpeg","image_sha256":"722b458334ca99c97b31dada1c92d6197503bb82c89038e2686a4d7f1e6af6d3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_12.jpg","caption":"Fig. 12. Planar views of the $\\mathrm{a - AlF_3}$ substrate models used to simulate the TMA removal reactions: (a) $-\\mathrm{F}$ terminated and (b) $-\\mathrm{CH_3}$ terminated models.","id":"train/atomic-layer-etching/simulation-usecase/29/fig_12","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_12","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":55,"width":257,"height":390},{"panel_id":"b","x":284,"y":55,"width":249,"height":395}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":539,"height":470,"image_format":"jpeg","image_sha256":"ac378e5270752e33efe40005e10330766bca29c7052d33456b1446c679e3d1b4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_14.jpg","caption":"Fig. 14. Changes in atomistic structures during the two-step removal reaction of $\\mathrm{a - AlF_3}$ by TMA. Dashed lines represent the main interatomic distances in $\\mathring{\\mathrm{A}}$","id":"train/atomic-layer-etching/simulation-usecase/29/fig_14","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_14","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":10,"y":5,"width":1188,"height":604}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1208,"height":608,"image_format":"jpeg","image_sha256":"97b629fe67d86e5b96bded38cfe629e173815b78ff9c6e7ba4c07099a394ec7c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_4.jpg","caption":"Fig. 4. Evolution of atomistic structures during optimization of surface -OH coverage on the $\\mathsf{a - Al_2O_3}$ slab model. The most exothermic reaction $(\\Delta E)$ and desorption $(E_{\\mathrm{des}})$ energies are also displayed in eV.","id":"train/atomic-layer-etching/simulation-usecase/29/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_4","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":3,"width":1134,"height":368}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1139,"height":372,"image_format":"jpeg","image_sha256":"97faf094c214a121d9e0616a2d8d5e062b35a3d45ee09c89205f2b40fcce2165","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_6.jpg","caption":"Fig. 6. Changes in atomistic structures for initial fluorination pathways of $\\mathrm{a - Al_2O_3}$ by HF. \"H\" refers to an H atom originating from the HF molecule. Dashed lines represent the important interatomic distances, with values in $\\mathring{\\mathrm{A}}$ .","id":"train/atomic-layer-etching/simulation-usecase/29/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_6","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":6,"width":1206,"height":855}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1211,"height":864,"image_format":"jpeg","image_sha256":"c980f9ac3441c69c4ce319e632fc76f466a0f0eb4b28171f889339b93ffd3939","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_7.jpg","caption":"Fig. 7. Changes in the atomistic structures for the second fluorination pathways of $\\mathrm{a - Al_2O_3}$ by HF. The label \"H\" refers to an H atom originating from the HF molecule. Dashed lines represent the important interatomic distances, with values in $\\mathring{\\mathrm{A}}$","id":"train/atomic-layer-etching/simulation-usecase/29/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_7","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":3,"width":1195,"height":447}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1211,"height":453,"image_format":"jpeg","image_sha256":"d31aaf912eb57c8ca4dac3689eab0d984b1e2bc4678ea7275ab7a9bb78d1a64c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_8.jpg","caption":"Fig. 8. Changes in atomistic structures for third fluorination pathways of a- $\\mathrm{Al_2O_3}$ by HF. The label \"H\" refers to an H atom originating from the HF molecule. Dashed lines represent the important interatomic distances, with values in $\\mathring{\\mathrm{A}}$","id":"train/atomic-layer-etching/simulation-usecase/29/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_8","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":1,"width":1201,"height":454}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1205,"height":461,"image_format":"jpeg","image_sha256":"cb26674e0b3a8083ce87fedf445ed48c1b52367dff119d1a980f521a27e29860","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_9.jpg","caption":"Fig. 9. Changes in atomistic structures for the subsurface fluorination of $\\mathrm{a - Al_2O_3}$ by HF. \"H\" refers to an H atom originating from the HF molecule. Dashed lines represent the important interatomic distances, with values in $\\mathring{\\mathrm{A}}$","id":"train/atomic-layer-etching/simulation-usecase/29/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_9","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":7,"y":2,"width":1200,"height":237}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1211,"height":241,"image_format":"jpeg","image_sha256":"c462ba3e66dd9f7326ae6387f40dc9dbb240f94a5288a999ef7c074874b4ae88","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_3.jpg","caption":"FIG. 3. Side views of the simulations cell at various values of $\\mathsf{Ar}^+$ fluences during the ion bombardment step. The snapshot with the label of $0\\mathrm{ML}$ of $\\mathsf{Ar}^+$ refers to the simulation cell immediately after the chlorination step, before ion bombardment has begun. Translucent yellow spheres are $\\mathrm{Si}$ atoms, and solid cyan spheres are $\\mathrm{Cl}$ atoms. The $\\mathsf{Ar}^+$ energy is $80\\mathrm{eV}$ . The key results are that ion bombardment rapidly mixes $\\mathrm{Cl}$ into an amorphous layer about $1\\mathrm{nm}$ deep and that the $\\mathrm{Cl}$ is nearly uniform throughout the layer after a few $\\mathrm{ML}$ of fluence. The $\\mathrm{Cl}$ content in the layer slowly decreases with ion fluence. The snapshots were rendered in Ovito (Ref. 32).","id":"train/atomic-layer-etching/simulation-usecase/6/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_3","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":536,"height":919}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":536,"height":919,"image_format":"jpeg","image_sha256":"527fac060f810ad96f564d34b204f4496d2feccdecd1dc177505c81ff11c640e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_4.jpg","caption":"FIG. 4. Top views of the simulations cell at various values of $\\mathsf{Ar}^+$ fluences during the ion bombardment step corresponding to Fig. 3 (80 eV ion energy). The surface of the cell can be seen to be nearly saturated with $\\mathrm{Cl}$ before ion bombardment has begun (i.e., $0\\mathrm{ML}$ fluence). After $50\\mathrm{ML}$ of ion fluence, $\\mathrm{Cl}$ is nearly but not completely removed from the surface. The snapshots were rendered in Ovito (Ref. 32).","id":"train/atomic-layer-etching/simulation-usecase/6/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_4","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":533,"height":778}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":533,"height":778,"image_format":"jpeg","image_sha256":"7b7aa5353262523696aa08a56ee270b90b008342e0161a73f31e75a8312fb276","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_5.jpg","caption":"FIG. 5. Depiction of the near-surface phenomena during $\\mathsf{Ar^+}$ bombardment in $\\mathrm{Si - Cl_2 - Ar}$ ALE as observed in MD simulations. The regions labeled by red brackets and separated by red dashed lines are the Cl layer, amorphous mixed layer, and crystalline Si region. The green arrows indicate the major products leaving the surface (atomic Cl, $\\mathrm{SiCl}_2$ and atomic Si). The black arrows indicate two major events occurring near the surface. These events are Cl mixing from the Cl layer into the mixed layer and Si replenishment from the crystalline Si region into the mixed layer.","id":"train/atomic-layer-etching/simulation-usecase/6/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_5","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":750}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":675,"height":750,"image_format":"jpeg","image_sha256":"1429882a34e10ab56dad73688b8908318c9cccbaffe692093f6b79cec015bfa5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_9_fig_1.jpg","caption":"Fig. 1. Schematic of the photo-assistant ALE of chlorinated Si surfaces. The surface is modified by chlorine to weaken the back-bonds of target Si atomic layer; and then the modified Si layer is selectively removed/desorbed by $\\mathrm{Ar^{+}}$ bombardment assisted by photo-irradiation.","id":"train/atomic-layer-etching/simulation-usecase/9/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/9/fig_1","subset":"conceptual-diagram","split":"train","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":0,"width":680,"height":421}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/Mechanism of photoassisted atomic layer etching of chlorinated Si(111) surfaces Insight.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":689,"height":425,"image_format":"jpeg","image_sha256":"0d7386079879a4c65d4488c35a3873eed97fb098d29f4d0a90b72fe2a3a3c523","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/conceptual-diagram/validation/metadata.jsonl b/subsets/conceptual-diagram/validation/metadata.jsonl index d33066eaf9d5a379fce139ca3958371a370e59fc..16e751e9e04a8ee9f8fdf9a59bcb034c69396854 100644 --- a/subsets/conceptual-diagram/validation/metadata.jsonl +++ b/subsets/conceptual-diagram/validation/metadata.jsonl @@ -1,21 +1,21 @@ -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG4_b.jpg","caption":"(b)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG4_b","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG4_b","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG4_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG4_b.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":503,"height":553,"image_format":"jpeg","image_sha256":"4bf174aeadd82b3321964ee7345c9615423f8b708b90fb677fd52b286622f8e4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":498,"height":547}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a NiO crystal lattice containing nickel vacancies. Oxygen atoms form a regular sublattice, while some nickel sites are intentionally left vacant and marked with dashed circles. The arrows indicate the locations of these Ni vacancies, and the curved arrow suggests local atomic relaxation around the defect site. This schematic highlights how missing Ni atoms disrupt the local lattice environment and induce structural rearrangements in the surrounding oxygen framework.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Removing a Ni atom leaves behind a local charge imbalance, which causes nearby oxygen atoms to shift slightly from their original positions. This local relaxation helps stabilize the defect but also distorts the ideal lattice symmetry.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A lattice with Ni vacancies contains missing cation sites and local distortions, while a perfect lattice does not.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ni vacancies act as acceptor-type defects, increasing hole concentration in NiO. This directly affects conductivity and can enhance p-type behavior by altering the local electronic structure around oxygen atoms.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Vacancy concentration influences electrical conductivity, catalytic activity, and optical properties. Too many vacancies can destabilize the lattice, while too few may limit functional performance. Controlled vacancy engineering allows tuning NiO for specific device or catalytic applications.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_4_1fae3cc981298a0b2b2e2a5208a4d212317fb21e451477d03e4cdd3f15de8a64.jpg","caption":"","id":"validation/atomic-layer-deposition/simulation-usecase/4/1fae3cc981298a0b2b2e2a5208a4d212317fb21e451477d03e4cdd3f15de8a64","sample_id":"atomic-layer-deposition/simulation-usecase/4/1fae3cc981298a0b2b2e2a5208a4d212317fb21e451477d03e4cdd3f15de8a64","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/1fae3cc981298a0b2b2e2a5208a4d212317fb21e451477d03e4cdd3f15de8a64.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/1fae3cc981298a0b2b2e2a5208a4d212317fb21e451477d03e4cdd3f15de8a64.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":625,"height":372,"image_format":"jpeg","image_sha256":"0a4332536069a1b22bc6afe1eaaecf7e38a0104fd1e75a7ee079cb2fffea027f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":6,"width":620,"height":364}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_4_figure_1.jpg","caption":"Figure 1. Schematic illustration of an ideal area-selective ALD process using ABC-type ALD cycles with inhibitor molecules. The starting point is a patterned surface with two different materials: the growth area on which selective deposition is desired, and the non-growth area on which deposition should not occur. In step A, the inhibitor molecules selectively adsorb on the non-growth area. These inhibitor molecules block the precursor adsorption in step B, such that precursor molecules adsorb only on the growth area. This results in area-selective deposition on the growth area after removal of the precursor ligands and inhibitor molecules in step C. By repeating the cycles, material can be deposited by ALD area-selectively. It should be noted that in reality some inhibitor adsorption could still be allowed on the growth area, provided the growth rate and/or material properties of the deposited film are not significantly affected.","id":"validation/atomic-layer-deposition/simulation-usecase/4/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/4/figure_1","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":670,"height":375,"image_format":"jpeg","image_sha256":"12cadd5b2943cd83b0e0f7b77c99d918f7a0f889a6e1b63989540ed1b3f0981c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":664,"height":370}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_50_fig_3.jpg","caption":"Fig. 3 Energy profile predicted via DFT-D3BJ for the DCS decomposition reaction as shown in Fig. 2.","id":"validation/atomic-layer-deposition/simulation-usecase/50/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/50/fig_3","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/Gregory Hartmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":544,"height":372,"image_format":"jpeg","image_sha256":"cce61430d41c845841135e66136a1b716eb90a5c005b6e9050e61478575e129a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":544,"height":372}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the DFT-D3BJ reaction energy profile for DCS decomposition, tracking the relative energies of intermediates and the transition state along the reaction pathway. The overall trend is downhill, with a small energy barrier at the transition state and a significantly stabilized final state.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction state | Relative energy (eV) |\\n|----------------|----------------------|\\n| (a) | 0.0 |\\n| (b) | -0.6 |\\n| TS | -0.3 |\\n| (c) | -0.8 |\\n| (d) | -1.2 |\\n| (e) | -1.3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The relative energy decreases overall from the initial state to the final state, indicating an exothermic reaction. After an initial drop, the pathway passes through a shallow transition state before continuing downhill toward more stable intermediates and products.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The transition state (TS).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately −1.3 eV.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig11.jpg","caption":"Fig.11 (a) Schematic of the performed experiment investigating the effectiveness of $\\mathsf{H}_{2}$ plasma at removing hfac ligands adsorbed on the $A l_{2}O_{3}$ surface. The surface is first functionalized by carrying out a $500~\\mathrm{ms}$ Hhfac exposure. The arrows indicate the reference spectrum that is used for each measurement. (b) Spectrum for $A l_{2}O_{3}$ exposed to $500~\\mathrm{ms}$ Hhfac dosing, which is shown such that a comparison to the removal spectra can easily be made. (c) The difference spectra for increasing $\\mathsf{H}_{2}$ plasma exposure times referenced to the spectrum in (b).","id":"validation/atomic-layer-etching/experimental-usecase/10/fig11","sample_id":"atomic-layer-etching/experimental-usecase/10/fig11","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig11.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":655,"height":681,"image_format":"jpeg","image_sha256":"b847ea8828a9b9c502f508ddefa7bea29347a0cfbda560c00b9a8586e9ef76a1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":31,"y":7,"width":615,"height":186},{"panel_id":"b","x":31,"y":7,"width":615,"height":186}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig_1.jpg","caption":"Fig. 1 (a) General schematic of an ALE cycle relying on surface modification and ligand exchange, which often leads to a very thin residual contaminated layer at the surface. (b) Etch inhibition and surface clean mechanism, where the etching process self-limits due to formation of an etch inhibition layer. The inhibition layer can then be cleaned away to enable etching in the next cycle.","id":"validation/atomic-layer-etching/experimental-usecase/10/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/10/fig_1","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":655,"height":458,"image_format":"jpeg","image_sha256":"551e52ac52ec8f52e38d6150a544569f5bed2f1ed09ad3dbe164b2e8d9757bf4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":6,"width":651,"height":208},{"panel_id":"b","x":6,"y":219,"width":525,"height":238}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig_10.jpg","caption":"Fig. 10 (a) Representation of the procedure performed to analyze the integrated total area in the region $1900 - 1200 \\mathrm{cm}^{-1}$ . The data is the same as Fig. 9, however all the FTIR spectra are reference to the starting surface, such that the total change in the surface can be measured. (b) Integrated absorbance area between $1900 - 1200 \\mathrm{cm}^{-1}$ (red, open circles), and the peak area ratio of monodentate $(1656 \\mathrm{cm}^{-1})$ to chelate $(1571 \\mathrm{cm}^{-1})$ hfac (blue, closed squares) as a function of Hhfac dose time.","id":"validation/atomic-layer-etching/experimental-usecase/10/fig_10","sample_id":"atomic-layer-etching/experimental-usecase/10/fig_10","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":653,"height":733,"image_format":"jpeg","image_sha256":"2c4bdef74cbc7c6f949f884036311b2c79c18ec1fc1d3007e94b82a14c0cf5ff","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":26,"y":2,"width":624,"height":220},{"panel_id":"b","x":1,"y":274,"width":648,"height":455}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig_9.jpg","caption":"Fig. 9 FTIR difference spectrum for adsorption of Hhfac on the $\\mathrm{Al}_2\\mathrm{O}_3$ -coated powder. (a) Illustration of the performed experiment. The arrows indicate the reference spectrum for each measurement. (b) The spectra between $4000 - 900 \\mathrm{cm}^{-1}$ for different dosing times, listing the peaks discussed in the main text. (c) Schematic of the monodentate and chelate bonding configurations of hfac on the surface. (d), (e) Zoom in on the region $1900 - 1200 \\mathrm{cm}^{-1}$ from panel (a) for (d) the first $20 \\mathrm{ms}$ Hhfac pulse and (e) for increasing cumulative Hhfac dose times. In (d) and (e) the main monodentate and chelate peaks are highlighted in the figure.","id":"validation/atomic-layer-etching/experimental-usecase/10/fig_9","sample_id":"atomic-layer-etching/experimental-usecase/10/fig_9","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"spectra chart"},{"panel_id":"e","label":"multi spectra chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1111,"height":686,"image_format":"jpeg","image_sha256":"766785b075bceeb350de3aad0ec28b2086d1ec94c2d08534975caf583276fa28","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":102,"width":588,"height":148},{"panel_id":"b","x":5,"y":258,"width":559,"height":425},{"panel_id":"c","x":624,"y":44,"width":466,"height":213},{"panel_id":"d","x":617,"y":257,"width":478,"height":189},{"panel_id":"e","x":598,"y":442,"width":511,"height":242}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_15_6852bf4de92775362cf6a4f1fa9753359d9919398427978150996f8ff9322581.jpg","caption":"Fi. 1. t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t h t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t","id":"validation/atomic-layer-etching/experimental-usecase/15/6852bf4de92775362cf6a4f1fa9753359d9919398427978150996f8ff9322581","sample_id":"atomic-layer-etching/experimental-usecase/15/6852bf4de92775362cf6a4f1fa9753359d9919398427978150996f8ff9322581","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/6852bf4de92775362cf6a4f1fa9753359d9919398427978150996f8ff9322581.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/6852bf4de92775362cf6a4f1fa9753359d9919398427978150996f8ff9322581.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1367,"height":762,"image_format":"jpeg","image_sha256":"b89601e200e7098508e6dfa95a43382e6ca85357f95ab465a14b7bbf47275fe4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":3,"y":515,"width":1362,"height":245},{"panel_id":"a","x":5,"y":1,"width":1357,"height":511}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_15_fig9.jpg","caption":"FIG.9. (Color) Comparison of different mechanisms to modify the surface in ALE by (a) chemisorption, (b) deposition, (c) conversion, and (d) extraction. In the extraction case, the original material is a compound, with the modification removing one element preferentially from the topmost surface, while the other element is removed in the subsequent removal step (not shown here). Examples of mechanisms are given throughout Sec. V. Colored atoms represent reactant chemical species.","id":"validation/atomic-layer-etching/experimental-usecase/15/fig9","sample_id":"atomic-layer-etching/experimental-usecase/15/fig9","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1373,"height":550,"image_format":"jpeg","image_sha256":"0daff7b6be83ab9af8404a2cda9f3406e2b755d5300c5c201a02ba89a91cfd8b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":1372,"height":541}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_15_fig_2.jpg","caption":"FIG. 2. Schematic of (a) directional etching, showing a greater rate of material removal in the vertical direction than lateral, and (b) isotropic etching, showing material removed at the same rate in all directions.","id":"validation/atomic-layer-etching/experimental-usecase/15/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/15/fig_2","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":553,"height":284,"image_format":"jpeg","image_sha256":"47b466e11b35d7d390da19feb6defc88ebef2a35a552303f5c2bc76b04e1b825","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":289,"y":7,"width":264,"height":279},{"panel_id":"a","x":3,"y":4,"width":250,"height":278}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_15_fig_6.jpg","caption":"FIG. 6. (Color) Illustration of an energy scan for the ALE removal step. The ALE window in Regime II indicates the desirable operating range.","id":"validation/atomic-layer-etching/experimental-usecase/15/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/15/fig_6","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":675,"height":698,"image_format":"jpeg","image_sha256":"789cc5e912f244db87e15275fd809ea03da0c8d5f17859d51819844d2bdb40f4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":670,"height":697}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image depicts three regimes of etch per cycle (EPC) at varying removal energies, illustrating incomplete removal, ALE window, and sputtering. The retch per cycle increases with removal energy.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first regime involves incomplete removal of the material from the surface. The second regime shows the ALE window with complete material removal, independent of energy. The third regime represents the over-etching of the surface due to high energy applied.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch per cycle increase as the removal energy e.g. ion energy) increases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The highest energy levels result in sputtering on the surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is important to work within the ALE window, avoiding low or high energy levels.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_19_fig_9.jpg","caption":"Fig. 9. Schematic for TiN ALE using $\\mathrm{O_3}$ and HF as the reactants. Reproduced from Ref. [20].","id":"validation/atomic-layer-etching/experimental-usecase/19/fig_9","sample_id":"atomic-layer-etching/experimental-usecase/19/fig_9","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":650,"height":428,"image_format":"jpeg","image_sha256":"f157df2ecc1e33ad6fb67d88e7f3fff7c62af686f784b558a0c5212f28557e58","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":3,"width":307,"height":424},{"panel_id":"b","x":332,"y":8,"width":316,"height":418}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Shows the oxidation half reaction where O₃ oxidizes the TiN surface, converting Ti³⁺ to Ti⁴⁺ and forming a self limiting TiO₂ passivation layer (red). Byproducts O₂, NOₓ, or N₂ are released.\"},{\"panel_id\":\"b\",\"text\":\"Shows the fluorination half reaction where HF reacts with the TiO₂ layer to form volatile TiF₄ and H₂O, removing the oxidized layer and exposing fresh TiN. The dashed line indicates the etched layer thickness.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"O₃ oxidizes Ti³⁺ in TiN to Ti⁴⁺, forming a TiO₂ surface layer while releasing O₂, NOₓ, or N₂ as byproducts.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TiO₂ layer formed during oxidation acts as a diffusion barrier that prevents further oxidation of the underlying TiN. Once a complete TiO₂ layer forms, O₃ cannot easily penetrate to reach fresh TiN, causing the oxidation reaction to terminate and establishing self limiting behavior.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN exhibits an ALE window between 250°C and 350°C with nearly constant EPC values.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiF₄ is the volatile titanium containing product that carries away titanium atoms from the surface.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_14.jpg","caption":"FIG. 14. Si sample after bombardment by $1000\\mathrm{Ar^{+}}$ ions with energies of (a) 20 and (b) $40\\mathrm{eV}$ . The initial Si sample had a fluorocarbon overlayer grown using $10\\mathrm{eV}\\mathrm{CF}_2^+$ ions (300 impacts).","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_14","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_14","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_14.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":533,"height":1678,"image_format":"jpeg","image_sha256":"99ad01306b309c66d4bd921a3d5412d62d1a8389bc7ef3399ee17bdac41fa81e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":2,"y":781,"width":527,"height":739},{"panel_id":"a","x":0,"y":4,"width":524,"height":757}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Si sample after 1000 Ar⁺ impacts at 20 eV. The top layers are amorphized but the crystalline bulk is largely preserved. Some fluorocarbon species remain at the surface.\"},{\"panel_id\":\"b\",\"text\":\"Si sample after 1000 Ar⁺ impacts at 40 eV. The amorphized region is significantly thicker and extends deeper into the substrate due to higher ion penetration depth.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The amorphized layer is thicker at 40 eV because higher energy ions penetrate deeper into the sample.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"20 eV, as it produces a thinner amorphized region.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Silicon atoms.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Amorphization disrupts the crystalline order of the substrate, which can degrade device performance in applications requiring high-quality crystalline interfaces. It also affects subsequent etching cycles by changing the surface structure and bonding environment.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_9.jpg","caption":"FIG. 9. (a) Initial Si sample. The sample after bombardment with $\\mathrm{CF}_2^+$ ions of energies of (a) $10\\mathrm{eV}$ , (b) $20\\mathrm{eV}$ , and (c) $30\\mathrm{eV}$ .","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_9","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"},{"panel_id":"d","label":"conceptual diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1169,"height":514,"image_format":"jpeg","image_sha256":"49384d5ec5877e6ada4e571180003e4a04892d52aa98599b852f717b5001cbe3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":13,"y":4,"width":271,"height":434},{"panel_id":"b","x":327,"y":3,"width":260,"height":436},{"panel_id":"c","x":620,"y":1,"width":252,"height":440},{"panel_id":"d","x":901,"y":3,"width":267,"height":436}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Initial crystalline Si sample (27.17 × 27.17 × 38.04 ų) before any ion bombardment.\"},{\"panel_id\":\"b\",\"text\":\"Si sample after 10 eV CF₂⁺ bombardment. A thin (~4–5 Å) fluorocarbon layer forms on top with minimal disturbance to the underlying lattice.\"},{\"panel_id\":\"c\",\"text\":\"Si sample after 20 eV CF₂⁺ bombardment. The passivation layer is thicker (~8 Å) and F/C atoms begin penetrating the near-surface Si.\"},{\"panel_id\":\"d\",\"text\":\"Si sample after 30 eV CF₂⁺ bombardment. The fluorocarbon layer is thickest but concurrent Si etching occurs, and the surface appears shorter than the initial sample.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Because Si etching occurs simultaneously with deposition, preventing stable passivation layer formation.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The passivation layer thickens with energy: ~4–5 Å at 10 eV, ~8 Å at 20 eV, and broader still at 30 eV. However, higher energies also cause greater penetration of F and C into the Si lattice and increased amorphization. At 30 eV, concurrent Si etching begins to occur.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Si (dark), C (gray), F (light gray).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Below 30 eV, ideally 10–20 eV.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_22_ec1fb02c08373df4660d90bcd3038fea571293289915ab1bc0e3266659d25a55.jpg","caption":"Fi. 1. t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t h t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t","id":"validation/atomic-layer-etching/simulation-usecase/22/ec1fb02c08373df4660d90bcd3038fea571293289915ab1bc0e3266659d25a55","sample_id":"atomic-layer-etching/simulation-usecase/22/ec1fb02c08373df4660d90bcd3038fea571293289915ab1bc0e3266659d25a55","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/ec1fb02c08373df4660d90bcd3038fea571293289915ab1bc0e3266659d25a55.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/ec1fb02c08373df4660d90bcd3038fea571293289915ab1bc0e3266659d25a55.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/Review Paper -- Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1367,"height":762,"image_format":"jpeg","image_sha256":"b89601e200e7098508e6dfa95a43382e6ca85357f95ab465a14b7bbf47275fe4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":5,"y":523,"width":1354,"height":236},{"panel_id":"a","x":3,"y":1,"width":1361,"height":512}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_22_fig9.jpg","caption":"FIG.9. (Color) Comparison of different mechanisms to modify the surface in ALE by (a) chemisorption, (b) deposition, (c) conversion, and (d) extraction. In the extraction case, the original material is a compound, with the modification removing one element preferentially from the topmost surface, while the other element is removed in the subsequent removal step (not shown here). Examples of mechanisms are given throughout Sec. V. Colored atoms represent reactant chemical species.","id":"validation/atomic-layer-etching/simulation-usecase/22/fig9","sample_id":"atomic-layer-etching/simulation-usecase/22/fig9","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/Review Paper -- Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1373,"height":550,"image_format":"jpeg","image_sha256":"0daff7b6be83ab9af8404a2cda9f3406e2b755d5300c5c201a02ba89a91cfd8b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":1367,"height":541}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_22_fig_2.jpg","caption":"FIG. 2. Schematic of (a) directional etching, showing a greater rate of material removal in the vertical direction than lateral, and (b) isotropic etching, showing material removed at the same rate in all directions.","id":"validation/atomic-layer-etching/simulation-usecase/22/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/22/fig_2","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/Review Paper -- Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":553,"height":284,"image_format":"jpeg","image_sha256":"47b466e11b35d7d390da19feb6defc88ebef2a35a552303f5c2bc76b04e1b825","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":314,"y":8,"width":238,"height":276},{"panel_id":"a","x":6,"y":13,"width":229,"height":271}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_22_fig_6.jpg","caption":"FIG. 6. (Color) Illustration of an energy scan for the ALE removal step. The ALE window in Regime II indicates the desirable operating range.","id":"validation/atomic-layer-etching/simulation-usecase/22/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/22/fig_6","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/Review Paper -- Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":675,"height":698,"image_format":"jpeg","image_sha256":"789cc5e912f244db87e15275fd809ea03da0c8d5f17859d51819844d2bdb40f4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":5,"width":665,"height":689}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_1.jpg","caption":"Figure 1. Structural models optimized with DFT for the a) bare $\\mathrm{Al}_2\\mathrm{O}_3$ surface with $0\\%$ halides, b surface covered with $166\\%$ F,c $100\\%$ F,and d $100\\%$ Cl. The colors are as follows: $\\mathrm{Al} =$ yellow, $\\mathrm{O} =$ red, $\\mathrm{F} =$ light green, and $\\mathrm{Cl} =$ dark green.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_1","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_1","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"},{"panel_id":"d","label":"conceptual diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":663,"height":602,"image_format":"jpeg","image_sha256":"8a22ff9bef96f69f9005e3022164a60813d2fb60c23258cb0928064f478547b0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":6,"width":306,"height":307},{"panel_id":"b","x":345,"y":7,"width":314,"height":302},{"panel_id":"c","x":1,"y":311,"width":328,"height":288},{"panel_id":"d","x":354,"y":319,"width":307,"height":284}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_12.jpg","caption":"Step 1: Conversion/Fluorination - $\\mathrm{NbF}_5(\\mathrm{g})$ fluorinates the $\\mathrm{Al}_2\\mathrm{O}_3$ surface Figure 12. Proposed ALEt mechanism consists of a conversion step followed by an etch step: (a) starting $\\mathrm{Al}_2\\mathrm{O}_3$ surface, (b) after partial fluorination by $\\mathrm{NbF}_5,$ (c) upon excess $\\mathrm{NbF}_5$ exposure, a thick $\\mathrm{AlF}_x[\\mathrm{O}]$ is formed, (d) $\\mathrm{AlF}_x[\\mathrm{O}]$ surface with $\\mathrm{Al - F}$ bonds, (f) possible halideexchange interaction between $\\mathrm{CCl}_4$ and the $\\mathrm{AlF}_x[\\mathrm{O}]$ surface, and $(\\mathbf{g})$ converted $\\mathrm{AlF}_x[\\mathrm{O}]$ layer removed and the underlying $\\mathrm{Al}_2\\mathrm{O}_3$ surface revealed.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_12","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_12","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_12.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1083,"height":489,"image_format":"jpeg","image_sha256":"dffee7df6addd04f5ca7397935ddfccc99f8971c92b04f7919bcb3452fd58e7d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":8,"width":1070,"height":201},{"panel_id":"b","x":10,"y":213,"width":1070,"height":273}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG4_b.jpg","caption":"(b)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG4_b","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG4_b","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a NiO crystal lattice containing nickel vacancies. Oxygen atoms form a regular sublattice, while some nickel sites are intentionally left vacant and marked with dashed circles. The arrows indicate the locations of these Ni vacancies, and the curved arrow suggests local atomic relaxation around the defect site. This schematic highlights how missing Ni atoms disrupt the local lattice environment and induce structural rearrangements in the surrounding oxygen framework.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Removing a Ni atom leaves behind a local charge imbalance, which causes nearby oxygen atoms to shift slightly from their original positions. This local relaxation helps stabilize the defect but also distorts the ideal lattice symmetry.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A lattice with Ni vacancies contains missing cation sites and local distortions, while a perfect lattice does not.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ni vacancies act as acceptor-type defects, increasing hole concentration in NiO. This directly affects conductivity and can enhance p-type behavior by altering the local electronic structure around oxygen atoms.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Vacancy concentration influences electrical conductivity, catalytic activity, and optical properties. Too many vacancies can destabilize the lattice, while too few may limit functional performance. Controlled vacancy engineering allows tuning NiO for specific device or catalytic applications.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":3,"width":498,"height":547}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG4_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG4_b.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":503,"height":553,"image_format":"jpeg","image_sha256":"4bf174aeadd82b3321964ee7345c9615423f8b708b90fb677fd52b286622f8e4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_4_1fae3cc981298a0b2b2e2a5208a4d212317fb21e451477d03e4cdd3f15de8a64.jpg","caption":"","id":"validation/atomic-layer-deposition/simulation-usecase/4/1fae3cc981298a0b2b2e2a5208a4d212317fb21e451477d03e4cdd3f15de8a64","sample_id":"atomic-layer-deposition/simulation-usecase/4/1fae3cc981298a0b2b2e2a5208a4d212317fb21e451477d03e4cdd3f15de8a64","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":6,"width":620,"height":364}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/1fae3cc981298a0b2b2e2a5208a4d212317fb21e451477d03e4cdd3f15de8a64.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/1fae3cc981298a0b2b2e2a5208a4d212317fb21e451477d03e4cdd3f15de8a64.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"not_found"},"width":625,"height":372,"image_format":"jpeg","image_sha256":"0a4332536069a1b22bc6afe1eaaecf7e38a0104fd1e75a7ee079cb2fffea027f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_4_figure_1.jpg","caption":"Figure 1. Schematic illustration of an ideal area-selective ALD process using ABC-type ALD cycles with inhibitor molecules. The starting point is a patterned surface with two different materials: the growth area on which selective deposition is desired, and the non-growth area on which deposition should not occur. In step A, the inhibitor molecules selectively adsorb on the non-growth area. These inhibitor molecules block the precursor adsorption in step B, such that precursor molecules adsorb only on the growth area. This results in area-selective deposition on the growth area after removal of the precursor ligands and inhibitor molecules in step C. By repeating the cycles, material can be deposited by ALD area-selectively. It should be noted that in reality some inhibitor adsorption could still be allowed on the growth area, provided the growth rate and/or material properties of the deposited film are not significantly affected.","id":"validation/atomic-layer-deposition/simulation-usecase/4/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/4/figure_1","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":2,"width":664,"height":370}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":670,"height":375,"image_format":"jpeg","image_sha256":"12cadd5b2943cd83b0e0f7b77c99d918f7a0f889a6e1b63989540ed1b3f0981c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_50_fig_3.jpg","caption":"Fig. 3 Energy profile predicted via DFT-D3BJ for the DCS decomposition reaction as shown in Fig. 2.","id":"validation/atomic-layer-deposition/simulation-usecase/50/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/50/fig_3","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the DFT-D3BJ reaction energy profile for DCS decomposition, tracking the relative energies of intermediates and the transition state along the reaction pathway. The overall trend is downhill, with a small energy barrier at the transition state and a significantly stabilized final state.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction state | Relative energy (eV) |\\n|----------------|----------------------|\\n| (a) | 0.0 |\\n| (b) | -0.6 |\\n| TS | -0.3 |\\n| (c) | -0.8 |\\n| (d) | -1.2 |\\n| (e) | -1.3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The relative energy decreases overall from the initial state to the final state, indicating an exothermic reaction. After an initial drop, the pathway passes through a shallow transition state before continuing downhill toward more stable intermediates and products.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The transition state (TS).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately −1.3 eV.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":544,"height":372}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/Gregory Hartmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":544,"height":372,"image_format":"jpeg","image_sha256":"cce61430d41c845841135e66136a1b716eb90a5c005b6e9050e61478575e129a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig11.jpg","caption":"Fig.11 (a) Schematic of the performed experiment investigating the effectiveness of $\\mathsf{H}_{2}$ plasma at removing hfac ligands adsorbed on the $A l_{2}O_{3}$ surface. The surface is first functionalized by carrying out a $500~\\mathrm{ms}$ Hhfac exposure. The arrows indicate the reference spectrum that is used for each measurement. (b) Spectrum for $A l_{2}O_{3}$ exposed to $500~\\mathrm{ms}$ Hhfac dosing, which is shown such that a comparison to the removal spectra can easily be made. (c) The difference spectra for increasing $\\mathsf{H}_{2}$ plasma exposure times referenced to the spectrum in (b).","id":"validation/atomic-layer-etching/experimental-usecase/10/fig11","sample_id":"atomic-layer-etching/experimental-usecase/10/fig11","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":31,"y":7,"width":615,"height":186},{"panel_id":"b","x":31,"y":7,"width":615,"height":186}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig11.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":655,"height":681,"image_format":"jpeg","image_sha256":"b847ea8828a9b9c502f508ddefa7bea29347a0cfbda560c00b9a8586e9ef76a1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig_1.jpg","caption":"Fig. 1 (a) General schematic of an ALE cycle relying on surface modification and ligand exchange, which often leads to a very thin residual contaminated layer at the surface. (b) Etch inhibition and surface clean mechanism, where the etching process self-limits due to formation of an etch inhibition layer. The inhibition layer can then be cleaned away to enable etching in the next cycle.","id":"validation/atomic-layer-etching/experimental-usecase/10/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/10/fig_1","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":6,"width":651,"height":208},{"panel_id":"b","x":6,"y":219,"width":525,"height":238}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":655,"height":458,"image_format":"jpeg","image_sha256":"551e52ac52ec8f52e38d6150a544569f5bed2f1ed09ad3dbe164b2e8d9757bf4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig_10.jpg","caption":"Fig. 10 (a) Representation of the procedure performed to analyze the integrated total area in the region $1900 - 1200 \\mathrm{cm}^{-1}$ . The data is the same as Fig. 9, however all the FTIR spectra are reference to the starting surface, such that the total change in the surface can be measured. (b) Integrated absorbance area between $1900 - 1200 \\mathrm{cm}^{-1}$ (red, open circles), and the peak area ratio of monodentate $(1656 \\mathrm{cm}^{-1})$ to chelate $(1571 \\mathrm{cm}^{-1})$ hfac (blue, closed squares) as a function of Hhfac dose time.","id":"validation/atomic-layer-etching/experimental-usecase/10/fig_10","sample_id":"atomic-layer-etching/experimental-usecase/10/fig_10","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":26,"y":2,"width":624,"height":220},{"panel_id":"b","x":1,"y":274,"width":648,"height":455}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":653,"height":733,"image_format":"jpeg","image_sha256":"2c4bdef74cbc7c6f949f884036311b2c79c18ec1fc1d3007e94b82a14c0cf5ff","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig_9.jpg","caption":"Fig. 9 FTIR difference spectrum for adsorption of Hhfac on the $\\mathrm{Al}_2\\mathrm{O}_3$ -coated powder. (a) Illustration of the performed experiment. The arrows indicate the reference spectrum for each measurement. (b) The spectra between $4000 - 900 \\mathrm{cm}^{-1}$ for different dosing times, listing the peaks discussed in the main text. (c) Schematic of the monodentate and chelate bonding configurations of hfac on the surface. (d), (e) Zoom in on the region $1900 - 1200 \\mathrm{cm}^{-1}$ from panel (a) for (d) the first $20 \\mathrm{ms}$ Hhfac pulse and (e) for increasing cumulative Hhfac dose times. In (d) and (e) the main monodentate and chelate peaks are highlighted in the figure.","id":"validation/atomic-layer-etching/experimental-usecase/10/fig_9","sample_id":"atomic-layer-etching/experimental-usecase/10/fig_9","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"spectra chart"},{"panel_id":"e","label":"multi spectra chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":102,"width":588,"height":148},{"panel_id":"b","x":5,"y":258,"width":559,"height":425},{"panel_id":"c","x":624,"y":44,"width":466,"height":213},{"panel_id":"d","x":617,"y":257,"width":478,"height":189},{"panel_id":"e","x":598,"y":442,"width":511,"height":242}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1111,"height":686,"image_format":"jpeg","image_sha256":"766785b075bceeb350de3aad0ec28b2086d1ec94c2d08534975caf583276fa28","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_15_6852bf4de92775362cf6a4f1fa9753359d9919398427978150996f8ff9322581.jpg","caption":"Fi. 1. t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t h t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t","id":"validation/atomic-layer-etching/experimental-usecase/15/6852bf4de92775362cf6a4f1fa9753359d9919398427978150996f8ff9322581","sample_id":"atomic-layer-etching/experimental-usecase/15/6852bf4de92775362cf6a4f1fa9753359d9919398427978150996f8ff9322581","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":3,"y":515,"width":1362,"height":245},{"panel_id":"a","x":5,"y":1,"width":1357,"height":511}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/6852bf4de92775362cf6a4f1fa9753359d9919398427978150996f8ff9322581.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/6852bf4de92775362cf6a4f1fa9753359d9919398427978150996f8ff9322581.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1367,"height":762,"image_format":"jpeg","image_sha256":"b89601e200e7098508e6dfa95a43382e6ca85357f95ab465a14b7bbf47275fe4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_15_fig9.jpg","caption":"FIG.9. (Color) Comparison of different mechanisms to modify the surface in ALE by (a) chemisorption, (b) deposition, (c) conversion, and (d) extraction. In the extraction case, the original material is a compound, with the modification removing one element preferentially from the topmost surface, while the other element is removed in the subsequent removal step (not shown here). Examples of mechanisms are given throughout Sec. V. Colored atoms represent reactant chemical species.","id":"validation/atomic-layer-etching/experimental-usecase/15/fig9","sample_id":"atomic-layer-etching/experimental-usecase/15/fig9","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":2,"width":1372,"height":541}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1373,"height":550,"image_format":"jpeg","image_sha256":"0daff7b6be83ab9af8404a2cda9f3406e2b755d5300c5c201a02ba89a91cfd8b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_15_fig_2.jpg","caption":"FIG. 2. Schematic of (a) directional etching, showing a greater rate of material removal in the vertical direction than lateral, and (b) isotropic etching, showing material removed at the same rate in all directions.","id":"validation/atomic-layer-etching/experimental-usecase/15/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/15/fig_2","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":289,"y":7,"width":264,"height":279},{"panel_id":"a","x":3,"y":4,"width":250,"height":278}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":553,"height":284,"image_format":"jpeg","image_sha256":"47b466e11b35d7d390da19feb6defc88ebef2a35a552303f5c2bc76b04e1b825","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_15_fig_6.jpg","caption":"FIG. 6. (Color) Illustration of an energy scan for the ALE removal step. The ALE window in Regime II indicates the desirable operating range.","id":"validation/atomic-layer-etching/experimental-usecase/15/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/15/fig_6","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image depicts three regimes of etch per cycle (EPC) at varying removal energies, illustrating incomplete removal, ALE window, and sputtering. The retch per cycle increases with removal energy.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first regime involves incomplete removal of the material from the surface. The second regime shows the ALE window with complete material removal, independent of energy. The third regime represents the over-etching of the surface due to high energy applied.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch per cycle increase as the removal energy e.g. ion energy) increases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The highest energy levels result in sputtering on the surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is important to work within the ALE window, avoiding low or high energy levels.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":670,"height":697}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":675,"height":698,"image_format":"jpeg","image_sha256":"789cc5e912f244db87e15275fd809ea03da0c8d5f17859d51819844d2bdb40f4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_19_fig_9.jpg","caption":"Fig. 9. Schematic for TiN ALE using $\\mathrm{O_3}$ and HF as the reactants. Reproduced from Ref. [20].","id":"validation/atomic-layer-etching/experimental-usecase/19/fig_9","sample_id":"atomic-layer-etching/experimental-usecase/19/fig_9","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Shows the oxidation half reaction where O₃ oxidizes the TiN surface, converting Ti³⁺ to Ti⁴⁺ and forming a self limiting TiO₂ passivation layer (red). Byproducts O₂, NOₓ, or N₂ are released.\"},{\"panel_id\":\"b\",\"text\":\"Shows the fluorination half reaction where HF reacts with the TiO₂ layer to form volatile TiF₄ and H₂O, removing the oxidized layer and exposing fresh TiN. The dashed line indicates the etched layer thickness.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"O₃ oxidizes Ti³⁺ in TiN to Ti⁴⁺, forming a TiO₂ surface layer while releasing O₂, NOₓ, or N₂ as byproducts.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TiO₂ layer formed during oxidation acts as a diffusion barrier that prevents further oxidation of the underlying TiN. Once a complete TiO₂ layer forms, O₃ cannot easily penetrate to reach fresh TiN, causing the oxidation reaction to terminate and establishing self limiting behavior.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN exhibits an ALE window between 250°C and 350°C with nearly constant EPC values.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiF₄ is the volatile titanium containing product that carries away titanium atoms from the surface.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":3,"width":307,"height":424},{"panel_id":"b","x":332,"y":8,"width":316,"height":418}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":650,"height":428,"image_format":"jpeg","image_sha256":"f157df2ecc1e33ad6fb67d88e7f3fff7c62af686f784b558a0c5212f28557e58","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_14.jpg","caption":"FIG. 14. Si sample after bombardment by $1000\\mathrm{Ar^{+}}$ ions with energies of (a) 20 and (b) $40\\mathrm{eV}$ . The initial Si sample had a fluorocarbon overlayer grown using $10\\mathrm{eV}\\mathrm{CF}_2^+$ ions (300 impacts).","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_14","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_14","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Si sample after 1000 Ar⁺ impacts at 20 eV. The top layers are amorphized but the crystalline bulk is largely preserved. Some fluorocarbon species remain at the surface.\"},{\"panel_id\":\"b\",\"text\":\"Si sample after 1000 Ar⁺ impacts at 40 eV. The amorphized region is significantly thicker and extends deeper into the substrate due to higher ion penetration depth.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The amorphized layer is thicker at 40 eV because higher energy ions penetrate deeper into the sample.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"20 eV, as it produces a thinner amorphized region.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Silicon atoms.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Amorphization disrupts the crystalline order of the substrate, which can degrade device performance in applications requiring high-quality crystalline interfaces. It also affects subsequent etching cycles by changing the surface structure and bonding environment.\"}]}]","bbox":[{"panel_id":"b","x":2,"y":781,"width":527,"height":739},{"panel_id":"a","x":0,"y":4,"width":524,"height":757}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_14.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":533,"height":1678,"image_format":"jpeg","image_sha256":"99ad01306b309c66d4bd921a3d5412d62d1a8389bc7ef3399ee17bdac41fa81e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_9.jpg","caption":"FIG. 9. (a) Initial Si sample. The sample after bombardment with $\\mathrm{CF}_2^+$ ions of energies of (a) $10\\mathrm{eV}$ , (b) $20\\mathrm{eV}$ , and (c) $30\\mathrm{eV}$ .","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_9","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"},{"panel_id":"d","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Initial crystalline Si sample (27.17 × 27.17 × 38.04 ų) before any ion bombardment.\"},{\"panel_id\":\"b\",\"text\":\"Si sample after 10 eV CF₂⁺ bombardment. A thin (~4–5 Å) fluorocarbon layer forms on top with minimal disturbance to the underlying lattice.\"},{\"panel_id\":\"c\",\"text\":\"Si sample after 20 eV CF₂⁺ bombardment. The passivation layer is thicker (~8 Å) and F/C atoms begin penetrating the near-surface Si.\"},{\"panel_id\":\"d\",\"text\":\"Si sample after 30 eV CF₂⁺ bombardment. The fluorocarbon layer is thickest but concurrent Si etching occurs, and the surface appears shorter than the initial sample.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Because Si etching occurs simultaneously with deposition, preventing stable passivation layer formation.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The passivation layer thickens with energy: ~4–5 Å at 10 eV, ~8 Å at 20 eV, and broader still at 30 eV. However, higher energies also cause greater penetration of F and C into the Si lattice and increased amorphization. At 30 eV, concurrent Si etching begins to occur.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Si (dark), C (gray), F (light gray).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Below 30 eV, ideally 10–20 eV.\"}]}]","bbox":[{"panel_id":"a","x":13,"y":4,"width":271,"height":434},{"panel_id":"b","x":327,"y":3,"width":260,"height":436},{"panel_id":"c","x":620,"y":1,"width":252,"height":440},{"panel_id":"d","x":901,"y":3,"width":267,"height":436}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1169,"height":514,"image_format":"jpeg","image_sha256":"49384d5ec5877e6ada4e571180003e4a04892d52aa98599b852f717b5001cbe3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_22_ec1fb02c08373df4660d90bcd3038fea571293289915ab1bc0e3266659d25a55.jpg","caption":"Fi. 1. t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t h t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t","id":"validation/atomic-layer-etching/simulation-usecase/22/ec1fb02c08373df4660d90bcd3038fea571293289915ab1bc0e3266659d25a55","sample_id":"atomic-layer-etching/simulation-usecase/22/ec1fb02c08373df4660d90bcd3038fea571293289915ab1bc0e3266659d25a55","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":5,"y":523,"width":1354,"height":236},{"panel_id":"a","x":3,"y":1,"width":1361,"height":512}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/ec1fb02c08373df4660d90bcd3038fea571293289915ab1bc0e3266659d25a55.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/ec1fb02c08373df4660d90bcd3038fea571293289915ab1bc0e3266659d25a55.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/Review Paper -- Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1367,"height":762,"image_format":"jpeg","image_sha256":"b89601e200e7098508e6dfa95a43382e6ca85357f95ab465a14b7bbf47275fe4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_22_fig9.jpg","caption":"FIG.9. (Color) Comparison of different mechanisms to modify the surface in ALE by (a) chemisorption, (b) deposition, (c) conversion, and (d) extraction. In the extraction case, the original material is a compound, with the modification removing one element preferentially from the topmost surface, while the other element is removed in the subsequent removal step (not shown here). Examples of mechanisms are given throughout Sec. V. Colored atoms represent reactant chemical species.","id":"validation/atomic-layer-etching/simulation-usecase/22/fig9","sample_id":"atomic-layer-etching/simulation-usecase/22/fig9","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":3,"width":1367,"height":541}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/Review Paper -- Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":1373,"height":550,"image_format":"jpeg","image_sha256":"0daff7b6be83ab9af8404a2cda9f3406e2b755d5300c5c201a02ba89a91cfd8b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_22_fig_2.jpg","caption":"FIG. 2. Schematic of (a) directional etching, showing a greater rate of material removal in the vertical direction than lateral, and (b) isotropic etching, showing material removed at the same rate in all directions.","id":"validation/atomic-layer-etching/simulation-usecase/22/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/22/fig_2","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":314,"y":8,"width":238,"height":276},{"panel_id":"a","x":6,"y":13,"width":229,"height":271}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/Review Paper -- Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":553,"height":284,"image_format":"jpeg","image_sha256":"47b466e11b35d7d390da19feb6defc88ebef2a35a552303f5c2bc76b04e1b825","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_22_fig_6.jpg","caption":"FIG. 6. (Color) Illustration of an energy scan for the ALE removal step. The ALE window in Regime II indicates the desirable operating range.","id":"validation/atomic-layer-etching/simulation-usecase/22/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/22/fig_6","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":7,"y":5,"width":665,"height":689}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/Review Paper -- Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:img_caption"},"width":675,"height":698,"image_format":"jpeg","image_sha256":"789cc5e912f244db87e15275fd809ea03da0c8d5f17859d51819844d2bdb40f4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_1.jpg","caption":"Figure 1. Structural models optimized with DFT for the a) bare $\\mathrm{Al}_2\\mathrm{O}_3$ surface with $0\\%$ halides, b surface covered with $166\\%$ F,c $100\\%$ F,and d $100\\%$ Cl. The colors are as follows: $\\mathrm{Al} =$ yellow, $\\mathrm{O} =$ red, $\\mathrm{F} =$ light green, and $\\mathrm{Cl} =$ dark green.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_1","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_1","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"},{"panel_id":"c","label":"conceptual diagram"},{"panel_id":"d","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":8,"y":6,"width":306,"height":307},{"panel_id":"b","x":345,"y":7,"width":314,"height":302},{"panel_id":"c","x":1,"y":311,"width":328,"height":288},{"panel_id":"d","x":354,"y":319,"width":307,"height":284}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":663,"height":602,"image_format":"jpeg","image_sha256":"8a22ff9bef96f69f9005e3022164a60813d2fb60c23258cb0928064f478547b0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_12.jpg","caption":"Step 1: Conversion/Fluorination - $\\mathrm{NbF}_5(\\mathrm{g})$ fluorinates the $\\mathrm{Al}_2\\mathrm{O}_3$ surface Figure 12. Proposed ALEt mechanism consists of a conversion step followed by an etch step: (a) starting $\\mathrm{Al}_2\\mathrm{O}_3$ surface, (b) after partial fluorination by $\\mathrm{NbF}_5,$ (c) upon excess $\\mathrm{NbF}_5$ exposure, a thick $\\mathrm{AlF}_x[\\mathrm{O}]$ is formed, (d) $\\mathrm{AlF}_x[\\mathrm{O}]$ surface with $\\mathrm{Al - F}$ bonds, (f) possible halideexchange interaction between $\\mathrm{CCl}_4$ and the $\\mathrm{AlF}_x[\\mathrm{O}]$ surface, and $(\\mathbf{g})$ converted $\\mathrm{AlF}_x[\\mathrm{O}]$ layer removed and the underlying $\\mathrm{Al}_2\\mathrm{O}_3$ surface revealed.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_12","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_12","subset":"conceptual-diagram","split":"validation","classification":[{"panel_id":"a","label":"conceptual diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":8,"width":1070,"height":201},{"panel_id":"b","x":10,"y":213,"width":1070,"height":273}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_12.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"conceptual diagram","caption_source":"content.json:image_caption"},"width":1083,"height":489,"image_format":"jpeg","image_sha256":"dffee7df6addd04f5ca7397935ddfccc99f8971c92b04f7919bcb3452fd58e7d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/contour-heatmap/test/metadata.jsonl b/subsets/contour-heatmap/test/metadata.jsonl index 47b91709e3d599c2b1be4e727bb503a95113477a..7259987c661b6aa218d12430be3873a0d0fc0588 100644 --- a/subsets/contour-heatmap/test/metadata.jsonl +++ b/subsets/contour-heatmap/test/metadata.jsonl @@ -1,3 +1,3 @@ -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_20_fig_10.jpg","caption":"Fig. 10. Slice contours of transient flow and deposition process in the in-line spatial ALD reactor at 0.005, 0.015, 0.025, and 0.035 s for $1\\mathrm{mm}$ gap size, 0.22 torr pumping pressure, and $250^{\\circ}C$ wafer temperature.","id":"test/atomic-layer-deposition/simulation-usecase/20/fig_10","sample_id":"atomic-layer-deposition/simulation-usecase/20/fig_10","subset":"contour-heatmap","split":"test","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"contour heatmap"},{"panel_id":"c","label":"contour heatmap"},{"panel_id":"d","label":"contour heatmap"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/fig_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/Dongqing Pan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":1264,"height":1219,"image_format":"jpeg","image_sha256":"18781c891dfd08ed668d0d70be9bff3f992c0f094d2667bef2b8656bf75f1e55","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":7,"width":619,"height":608},{"panel_id":"b","x":638,"y":4,"width":619,"height":608},{"panel_id":"c","x":1,"y":589,"width":625,"height":634},{"panel_id":"d","x":635,"y":612,"width":622,"height":602}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Simulation snapshot at 0.005 s showing early stage of precursor dosing, with water and TMA beginning to fill their respective cylinders, minimal methane generation, and initial consumption of surface *OH sites under the water cylinder.\"},{\"panel_id\":\"b\",\"text\":\"Simulation snapshot at 0.015 s (critical dosing time) showing fully developed precursor distributions in the dosing cylinders, significant methane byproduct generation on the wafer surface, and near-complete consumption of reactive surface sites under both precursor zones.\"},{\"panel_id\":\"c\",\"text\":\"Simulation snapshot at 0.025 s showing steady-state precursor concentration profiles, saturated methane distribution, and fully reacted surface sites (*AlMe/*Al(Me)2 under TMA, *OH under water).\"},{\"panel_id\":\"d\",\"text\":\"Simulation snapshot at 0.035 s confirming steady-state conditions with no significant changes from (c), demonstrating the self-limiting nature of the ALD surface reactions beyond the critical dosing time.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 0.005 s, methane concentration is minimal since surface reactions have just begun. By 0.015 s, significant methane appears on the wafer surface beneath both precursor zones, indicating active half-reactions. From 0.025 s to 0.035 s, methane distribution reaches steady state with high concentrations near the surface. This evolution reflects the progression of ALD surface chemistry, where methane is released as a byproduct when TMA reacts with *OH groups and water reacts with methyl-terminated sites.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The nearly identical concentration profiles and surface coverage distributions between 0.025 s and 0.035 s confirm that saturation is achieved, consistent with the paper's finding that critical dosing time is approximately 0.015 s.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They represent the fraction of reactive surface sites: *OH indicates hydroxyl-terminated sites available for TMA reaction, while *AlMe/*Al(Me)2 indicates methyl-terminated sites (from TMA chemisorption) available for water reaction.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They are the separating gas (nitrogen) injection cylinder in the center and two exhaust/pumping cylinders that remove reaction byproducts and prevent precursor intermixing.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_40_fig4.jpg","caption":"Fig.4. a) DEZ 2D concentration profile at its injection channel for different values of substrate velocity, b) the corresponding DEZ concentration profiles projected at the substrate surface level. In this case, the substrate temperature and the gap between the substrate and the injection head were fixed at $200^{\\circ}C$ and $180~\\mu \\mathrm{m}$ respectively, c) schematic illustration of the variation of [DEZ] as a function of position for a substrate velocity of $8cm / s$ as implemented in the proposed model. The data shown here were simulated with Comsol Multiphysics.","id":"test/atomic-layer-deposition/simulation-usecase/40/fig4","sample_id":"atomic-layer-deposition/simulation-usecase/40/fig4","subset":"contour-heatmap","split":"test","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/images/fig4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/Viet Huong Nguyen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":1258,"height":855,"image_format":"jpeg","image_sha256":"2c96174a7149e6ee5b5dd8ba94f7e10b27b94b6512cae65db00d9a9651f7a762","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1258,"height":269},{"panel_id":"b","x":11,"y":312,"width":572,"height":543},{"panel_id":"c","x":639,"y":312,"width":577,"height":505}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This panel shows simulated spatial distributions of DEZ precursor concentration near the substrate for different substrate velocities, illustrating how increasing velocity reduces precursor residence time and alters the overlap between DEZ injection, exhaust, and N₂ carrier gas regions.\"},{\"panel_id\":\"b\",\"text\":\"This panel presents the DEZ concentration at the substrate surface as a function of lateral position for different substrate velocities, demonstrating that higher velocities broaden and lower the effective precursor exposure window, leading to reduced peak surface concentration and shorter saturation regions.\"},{\"panel_id\":\"c\",\"text\":\"This panel schematically defines discrete exposure zones along the substrate motion direction, showing how the total DEZ exposure can be decomposed into successive incremental contributions as the substrate passes under the injector, providing a basis for modeling growth per cycle in spatial ALD.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gas injector | N₂ | Exhaust | DEZ | Exhaust | N₂ |\\n|---|---|---|---|---|---|\\n| 0 cm/s | | | | | |\\n| 4 cm/s | | | | | |\\n| 12 cm/s | | | | | |\\n| 16 cm/s | | | | | |\"},{\"panel_id\":\"b\",\"text\":\"| Substrate velocity (cm/s) | [DEZ] at substrate surface (mol/m³) |\\n|---|---|\\n| 0 | 1.0 |\\n| 4 | 0.95 |\\n| 8 | 0.9 |\\n| 12 | 0.85 |\\n| 16 | 0.8 |\"},{\"panel_id\":\"c\",\"text\":\"| Substrate velocity (cm/s) | [DEZ] at substrate surface (mol/m³) |\\n|---|---|\\n| 8 | 1.0 |\\n| 8 | 0.9 |\\n| 8 | 0.8 |\\n| 8 | 0.7 |\\n| 8 | 0.6 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Substrate velocity directly determines precursor residence time and surface exposure uniformity in spatial ALD. Excessively high velocities limit precursor adsorption and prevent surface saturation, while low velocities may lead to overdosing and parasitic reactions. Optimizing substrate speed ensures self-limited surface chemistry, uniform film thickness, and stable high-throughput deposition.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Substrate velocity, Injector–substrate gap distance, Exhaust channel spacing, Precursor injection geometry\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Increasing substrate velocity narrows the DEZ exposure window and reduces peak surface concentration.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_fig_9.jpg","caption":"Fig. 9 - Comparison of the projected half-cycle time zones at differing operating conditions for temperature and pressure of the reagents. For Step A, a time contour plot (a) and an operational feasibility plot (b) with a feasible time range of $1.5\\mathrm{s}$ are shown. For Step B, a time contour plot (c) and an operational feasibility plot (d) with a feasible time range of $2.5\\mathrm{s}$ are shown.","id":"test/atomic-layer-etching/simulation-usecase/11/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/11/fig_9","subset":"contour-heatmap","split":"test","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"contour heatmap"},{"panel_id":"d","label":"heatmap"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":1014,"height":800,"image_format":"jpeg","image_sha256":"0e563c66765fb1786ea19c7de6960cf85c394b07cde0ba8203aa02bb82450dfc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":4,"width":465,"height":384},{"panel_id":"b","x":538,"y":8,"width":475,"height":392},{"panel_id":"c","x":13,"y":422,"width":450,"height":374},{"panel_id":"d","x":536,"y":422,"width":472,"height":377}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Contour plot of FNN-predicted half-cycle times for Step A across the operating window (533-598 K, 0-100 Pa). The horizontal color bands confirm that Step A is essentially pressure-independent, with times ranging from approximately 21 s at low temperatures to under 3 s at high temperatures.\"},{\"panel_id\":\"b\",\"text\":\"Operational feasibility map for Step A using a 1.5 s threshold. The blue region (operable) requires temperatures above approximately 570 K, while the red region (inoperable) indicates conditions where half-cycle times exceed industrial requirements. The boundary is horizontal, confirming pressure independence.\"},{\"panel_id\":\"c\",\"text\":\"Contour plot for Step B showing strong dependence on both temperature and pressure. Half-cycle times range from over 35 s at low temperature/pressure to under 5 s at high temperature and pressure, with curved contour lines indicating coupled effects.\"},{\"panel_id\":\"d\",\"text\":\"Operational feasibility map for Step B using a 2.5 s threshold. The curved boundary shows that achieving operable conditions requires both high temperature (above ~573 K) and sufficient pressure (above ~40-60 Pa depending on temperature).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (K) | Time (s) [Approximate, Independent of Pressure] |\\n|---|---|\\n| 525 | 20 |\\n| 530 | 15 |\\n| 540 | 9 |\\n| 550 | 6 |\\n| 560 | 3 |\\n| 570 | 1.5 |\\n| > 575 | < 1 |\"},{\"panel_id\":\"b\",\"text\":\"| Pressure (Pa) | Boundary Temperature (K) | Status Below Boundary | Status Above Boundary |\\n|---|---|---|---|\\n| 0 - 100 | 570 | Inoperable | Operable |\"},{\"panel_id\":\"c\",\"text\":\"| Temperature (K) | Time at P=10 Pa (s) | Time at P=50 Pa (s) | Time at P=90 Pa (s) |\\n|---|---|---|---|\\n| 525 | 38 | 36 | 35 |\\n| 530 | 32 | 30 | 28 |\\n| 540 | 22 | 18 | 16 |\\n| 550 | 15 | 10 | 8 |\\n| 560 | 10 | 6 | 5 |\\n| 570 | 5 | 3 | 2.5 |\\n| 580 | 3 | 1 | < 1 |\"},{\"panel_id\":\"d\",\"text\":\"| Pressure (Pa) | Transition Temperature (K) [Boundary between Inoperable/Operable] |\\n|---|---|\\n| 20 | ~595 |\\n| 25 | 590 |\\n| 30 | 582 |\\n| 40 | 576 |\\n| 50 | 574 |\\n| 60 | 573 |\\n| 80 | 572 |\\n| 100 | 572 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"These thresholds ensure that the microscopic half-cycle times, when combined with macroscopic gas transport times of 2-3 s, yield total process times under the industrial target of approximately 5 s per half-cycle. The thresholds are based on experimental observations showing self-limiting behavior is achieved within these times at the validation temperature of 573 K.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Step A shows virtually no pressure dependence, as evidenced by the horizontal contour lines in (a) and the horizontal feasibility boundary in (b). Only temperature affects the Step A half-cycle time. In contrast, Step B depends on both temperature and pressure, shown by the curved contours in (c) and the curved feasibility boundary in (d). This means Step B optimization requires careful selection of both parameters, while Step A can be optimized by temperature alone.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Step A requires temperatures above approximately 570 K to achieve half-cycle times below the 1.5 s feasibility threshold.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Blue indicates operable conditions where half-cycle times meet industrial requirements, while red indicates inoperable conditions where times are too long for practical use.\"}]}]"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_20_fig_10.jpg","caption":"Fig. 10. Slice contours of transient flow and deposition process in the in-line spatial ALD reactor at 0.005, 0.015, 0.025, and 0.035 s for $1\\mathrm{mm}$ gap size, 0.22 torr pumping pressure, and $250^{\\circ}C$ wafer temperature.","id":"test/atomic-layer-deposition/simulation-usecase/20/fig_10","sample_id":"atomic-layer-deposition/simulation-usecase/20/fig_10","subset":"contour-heatmap","split":"test","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"contour heatmap"},{"panel_id":"c","label":"contour heatmap"},{"panel_id":"d","label":"contour heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Simulation snapshot at 0.005 s showing early stage of precursor dosing, with water and TMA beginning to fill their respective cylinders, minimal methane generation, and initial consumption of surface *OH sites under the water cylinder.\"},{\"panel_id\":\"b\",\"text\":\"Simulation snapshot at 0.015 s (critical dosing time) showing fully developed precursor distributions in the dosing cylinders, significant methane byproduct generation on the wafer surface, and near-complete consumption of reactive surface sites under both precursor zones.\"},{\"panel_id\":\"c\",\"text\":\"Simulation snapshot at 0.025 s showing steady-state precursor concentration profiles, saturated methane distribution, and fully reacted surface sites (*AlMe/*Al(Me)2 under TMA, *OH under water).\"},{\"panel_id\":\"d\",\"text\":\"Simulation snapshot at 0.035 s confirming steady-state conditions with no significant changes from (c), demonstrating the self-limiting nature of the ALD surface reactions beyond the critical dosing time.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 0.005 s, methane concentration is minimal since surface reactions have just begun. By 0.015 s, significant methane appears on the wafer surface beneath both precursor zones, indicating active half-reactions. From 0.025 s to 0.035 s, methane distribution reaches steady state with high concentrations near the surface. This evolution reflects the progression of ALD surface chemistry, where methane is released as a byproduct when TMA reacts with *OH groups and water reacts with methyl-terminated sites.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The nearly identical concentration profiles and surface coverage distributions between 0.025 s and 0.035 s confirm that saturation is achieved, consistent with the paper's finding that critical dosing time is approximately 0.015 s.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They represent the fraction of reactive surface sites: *OH indicates hydroxyl-terminated sites available for TMA reaction, while *AlMe/*Al(Me)2 indicates methyl-terminated sites (from TMA chemisorption) available for water reaction.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They are the separating gas (nitrogen) injection cylinder in the center and two exhaust/pumping cylinders that remove reaction byproducts and prevent precursor intermixing.\"}]}]","bbox":[{"panel_id":"a","x":10,"y":7,"width":619,"height":608},{"panel_id":"b","x":638,"y":4,"width":619,"height":608},{"panel_id":"c","x":1,"y":589,"width":625,"height":634},{"panel_id":"d","x":635,"y":612,"width":622,"height":602}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/fig_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/Dongqing Pan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":1264,"height":1219,"image_format":"jpeg","image_sha256":"18781c891dfd08ed668d0d70be9bff3f992c0f094d2667bef2b8656bf75f1e55","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_40_fig4.jpg","caption":"Fig.4. a) DEZ 2D concentration profile at its injection channel for different values of substrate velocity, b) the corresponding DEZ concentration profiles projected at the substrate surface level. In this case, the substrate temperature and the gap between the substrate and the injection head were fixed at $200^{\\circ}C$ and $180~\\mu \\mathrm{m}$ respectively, c) schematic illustration of the variation of [DEZ] as a function of position for a substrate velocity of $8cm / s$ as implemented in the proposed model. The data shown here were simulated with Comsol Multiphysics.","id":"test/atomic-layer-deposition/simulation-usecase/40/fig4","sample_id":"atomic-layer-deposition/simulation-usecase/40/fig4","subset":"contour-heatmap","split":"test","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This panel shows simulated spatial distributions of DEZ precursor concentration near the substrate for different substrate velocities, illustrating how increasing velocity reduces precursor residence time and alters the overlap between DEZ injection, exhaust, and N₂ carrier gas regions.\"},{\"panel_id\":\"b\",\"text\":\"This panel presents the DEZ concentration at the substrate surface as a function of lateral position for different substrate velocities, demonstrating that higher velocities broaden and lower the effective precursor exposure window, leading to reduced peak surface concentration and shorter saturation regions.\"},{\"panel_id\":\"c\",\"text\":\"This panel schematically defines discrete exposure zones along the substrate motion direction, showing how the total DEZ exposure can be decomposed into successive incremental contributions as the substrate passes under the injector, providing a basis for modeling growth per cycle in spatial ALD.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gas injector | N₂ | Exhaust | DEZ | Exhaust | N₂ |\\n|---|---|---|---|---|---|\\n| 0 cm/s | | | | | |\\n| 4 cm/s | | | | | |\\n| 12 cm/s | | | | | |\\n| 16 cm/s | | | | | |\"},{\"panel_id\":\"b\",\"text\":\"| Substrate velocity (cm/s) | [DEZ] at substrate surface (mol/m³) |\\n|---|---|\\n| 0 | 1.0 |\\n| 4 | 0.95 |\\n| 8 | 0.9 |\\n| 12 | 0.85 |\\n| 16 | 0.8 |\"},{\"panel_id\":\"c\",\"text\":\"| Substrate velocity (cm/s) | [DEZ] at substrate surface (mol/m³) |\\n|---|---|\\n| 8 | 1.0 |\\n| 8 | 0.9 |\\n| 8 | 0.8 |\\n| 8 | 0.7 |\\n| 8 | 0.6 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Substrate velocity directly determines precursor residence time and surface exposure uniformity in spatial ALD. Excessively high velocities limit precursor adsorption and prevent surface saturation, while low velocities may lead to overdosing and parasitic reactions. Optimizing substrate speed ensures self-limited surface chemistry, uniform film thickness, and stable high-throughput deposition.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Substrate velocity, Injector–substrate gap distance, Exhaust channel spacing, Precursor injection geometry\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Increasing substrate velocity narrows the DEZ exposure window and reduces peak surface concentration.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1258,"height":269},{"panel_id":"b","x":11,"y":312,"width":572,"height":543},{"panel_id":"c","x":639,"y":312,"width":577,"height":505}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/images/fig4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/Viet Huong Nguyen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":1258,"height":855,"image_format":"jpeg","image_sha256":"2c96174a7149e6ee5b5dd8ba94f7e10b27b94b6512cae65db00d9a9651f7a762","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_fig_9.jpg","caption":"Fig. 9 - Comparison of the projected half-cycle time zones at differing operating conditions for temperature and pressure of the reagents. For Step A, a time contour plot (a) and an operational feasibility plot (b) with a feasible time range of $1.5\\mathrm{s}$ are shown. For Step B, a time contour plot (c) and an operational feasibility plot (d) with a feasible time range of $2.5\\mathrm{s}$ are shown.","id":"test/atomic-layer-etching/simulation-usecase/11/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/11/fig_9","subset":"contour-heatmap","split":"test","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"contour heatmap"},{"panel_id":"d","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Contour plot of FNN-predicted half-cycle times for Step A across the operating window (533-598 K, 0-100 Pa). The horizontal color bands confirm that Step A is essentially pressure-independent, with times ranging from approximately 21 s at low temperatures to under 3 s at high temperatures.\"},{\"panel_id\":\"b\",\"text\":\"Operational feasibility map for Step A using a 1.5 s threshold. The blue region (operable) requires temperatures above approximately 570 K, while the red region (inoperable) indicates conditions where half-cycle times exceed industrial requirements. The boundary is horizontal, confirming pressure independence.\"},{\"panel_id\":\"c\",\"text\":\"Contour plot for Step B showing strong dependence on both temperature and pressure. Half-cycle times range from over 35 s at low temperature/pressure to under 5 s at high temperature and pressure, with curved contour lines indicating coupled effects.\"},{\"panel_id\":\"d\",\"text\":\"Operational feasibility map for Step B using a 2.5 s threshold. The curved boundary shows that achieving operable conditions requires both high temperature (above ~573 K) and sufficient pressure (above ~40-60 Pa depending on temperature).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (K) | Time (s) [Approximate, Independent of Pressure] |\\n|---|---|\\n| 525 | 20 |\\n| 530 | 15 |\\n| 540 | 9 |\\n| 550 | 6 |\\n| 560 | 3 |\\n| 570 | 1.5 |\\n| > 575 | < 1 |\"},{\"panel_id\":\"b\",\"text\":\"| Pressure (Pa) | Boundary Temperature (K) | Status Below Boundary | Status Above Boundary |\\n|---|---|---|---|\\n| 0 - 100 | 570 | Inoperable | Operable |\"},{\"panel_id\":\"c\",\"text\":\"| Temperature (K) | Time at P=10 Pa (s) | Time at P=50 Pa (s) | Time at P=90 Pa (s) |\\n|---|---|---|---|\\n| 525 | 38 | 36 | 35 |\\n| 530 | 32 | 30 | 28 |\\n| 540 | 22 | 18 | 16 |\\n| 550 | 15 | 10 | 8 |\\n| 560 | 10 | 6 | 5 |\\n| 570 | 5 | 3 | 2.5 |\\n| 580 | 3 | 1 | < 1 |\"},{\"panel_id\":\"d\",\"text\":\"| Pressure (Pa) | Transition Temperature (K) [Boundary between Inoperable/Operable] |\\n|---|---|\\n| 20 | ~595 |\\n| 25 | 590 |\\n| 30 | 582 |\\n| 40 | 576 |\\n| 50 | 574 |\\n| 60 | 573 |\\n| 80 | 572 |\\n| 100 | 572 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"These thresholds ensure that the microscopic half-cycle times, when combined with macroscopic gas transport times of 2-3 s, yield total process times under the industrial target of approximately 5 s per half-cycle. The thresholds are based on experimental observations showing self-limiting behavior is achieved within these times at the validation temperature of 573 K.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Step A shows virtually no pressure dependence, as evidenced by the horizontal contour lines in (a) and the horizontal feasibility boundary in (b). Only temperature affects the Step A half-cycle time. In contrast, Step B depends on both temperature and pressure, shown by the curved contours in (c) and the curved feasibility boundary in (d). This means Step B optimization requires careful selection of both parameters, while Step A can be optimized by temperature alone.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Step A requires temperatures above approximately 570 K to achieve half-cycle times below the 1.5 s feasibility threshold.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Blue indicates operable conditions where half-cycle times meet industrial requirements, while red indicates inoperable conditions where times are too long for practical use.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":4,"width":465,"height":384},{"panel_id":"b","x":538,"y":8,"width":475,"height":392},{"panel_id":"c","x":13,"y":422,"width":450,"height":374},{"panel_id":"d","x":536,"y":422,"width":472,"height":377}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":1014,"height":800,"image_format":"jpeg","image_sha256":"0e563c66765fb1786ea19c7de6960cf85c394b07cde0ba8203aa02bb82450dfc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/contour-heatmap/train/metadata.jsonl b/subsets/contour-heatmap/train/metadata.jsonl index 7155d69869ae51f8050942498e0546789b27c242..02f9fbb42646a2e6b2db95df74e2d138f79a7681 100644 --- a/subsets/contour-heatmap/train/metadata.jsonl +++ b/subsets/contour-heatmap/train/metadata.jsonl @@ -1,11 +1,11 @@ -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_66_figure_2.jpg","caption":"Figure 2. Maps of the coercivity variations for (a) $\\mathrm{ZnO}$ (oxygen deficient) and (b) $\\mathrm{ZnO / Fe}$ ALD layers.","id":"train/atomic-layer-deposition/experimental-usecase/66/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/66/figure_2","subset":"contour-heatmap","split":"train","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"contour heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/Paskaleva et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"66","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:image_caption"},"width":1289,"height":555,"image_format":"jpeg","image_sha256":"5559422d2bf1c02ffe00f342c3a80f2f2ab6f615dfe743bc4d1cdb09810de632","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":7,"width":641,"height":543},{"panel_id":"b","x":633,"y":2,"width":650,"height":548}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A contour heatmap showing the magnetic coercivity (Hc) of ZnO (oxygen deficient) particles\"},{\"panel_id\":\"b\",\"text\":\"A contour heatmap showing the magnetic coercivity (Hc) of ZnO:Fe ALD layers\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| X (µm) Range | Y (µm) Range | H_c (Oe) |\\n|---|---|---|\\n| 0–100 | 0–100 | 0–500 |\\n| 100–200 | 0–100 | 500–1500 |\\n| 200–300 | 0–100 | 1500–2500 |\\n| 300–400 | 0–100 | 2500–3500 |\\n| 0–100 | 100–200 | 0–500 |\\n| 100–200 | 100–200 | 500–1500 |\\n| 200–300 | 100–200 | 1500–2500 |\\n| 300–400 | 100–200 | 2500–3500 |\\n| 0–100 | 200–300 | 0–500 |\\n| 100–200 | 200–300 | 500–1500 |\\n| 200–300 | 200–300 | 1500–2500 |\\n| 300–400 | 200–300 | 2500–3500 |\\n| 0–100 | 300–350 | 0–500 |\\n| 100–200 | 300–350 | 500–1500 |\\n| 200–300 | 300–350 | 1500–2500 |\\n| 300–400 | 300–350 | 1500–2500 |\"},{\"panel_id\":\"b\",\"text\":\"| X (µm) Range | Y (µm) Range | H_c (Oe) |\\n|---|---|---|\\n| 0–60 | 0–60 | 0–4000 |\\n| 60–120 | 0–60 | 0–4000 |\\n| 120–180| 0–60 | 0–4000 |\\n| 0–60 | 60–120 | 0–4000 |\\n| 60–120 | 60–120 | 0–4000 |\\n| 120–180| 60–120 | 0–4000 |\\n| 0–60 | 120–180| 0–4000 |\\n| 60–120 | 120–180| 0–4000 |\\n| 120–180| 60–120 | 0–4000 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Coercivity map of the undoped ZnO (oxygen deficient) is uniform\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The observed locations with very high Hc are stochastically distributed and can be assigned to the measurement artefacts.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Hc magnitude, the level of inhomogeneity and the overall magnetization is significantly stronger for the Fe-doped sample\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_66_figure_3.jpg","caption":"Figure 3. Maps of the Kerr angle variations for (a) $\\mathrm{ZnO}$ (oxygen deficient) and (b) $\\mathrm{ZnO / Fe}$ ALD layers.","id":"train/atomic-layer-deposition/experimental-usecase/66/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/66/figure_3","subset":"contour-heatmap","split":"train","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"contour heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/Paskaleva et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"66","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:image_caption"},"width":1292,"height":556,"image_format":"jpeg","image_sha256":"ed0ddf14ba0921433574f86bea53b6a1a3faaeab914c8878f4e151162b58ed93","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":3,"width":652,"height":550},{"panel_id":"b","x":659,"y":1,"width":626,"height":553}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a contour heatmap of Kerr rotation angle (θKerr) in millidegrees for oxygen deficient ZnO.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows a contour heatmap of Kerr rotation angle (θKerr) in millidegrees for ZnO:Fe samples.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| X (µm) | Y (µm) | θ_Kerr (mdeg) |\\n|---|---|---|\\n| 0–50 | 0–50 | 0–40 |\\n| 50–100 | 0–50 | 40–80 |\\n| 100–150| 0–50 | 80–120 |\\n| 150–200| 0–50 | 120–160 |\\n| 200–250| 0–50 | 160–200 |\\n| 250–300| 0–50 | 200–220 |\\n| 300–350| 0–50 | 160–200 |\\n| 350–400| 0–50 | 160–200 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Undoped ZnO layers are homogeneous, and the values of θKerr are very small, most of the data are in the range [0−20]\\nmdeg.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ZnO/Fe layer demonstrates inhomogeneous distribution of θKerr whose values are significantly (2 orders of magnitude) larger than those of the undoped layer.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An interesting feature is that both clockwise (positive θKerr) and counterclockwise (negative θKerr) Kerr polarization rotations are observed in the Kerr angle map of Fe-doped ZnO, indicative of complex MO process activity\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_17_fig_5.jpg","caption":"Fig. 5. Contours of Reynolds Number for Step A of various reactor configurations at 0.025 s in the standard condition in Table 3.","id":"train/atomic-layer-etching/simulation-usecase/17/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/17/fig_5","subset":"contour-heatmap","split":"train","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"contour heatmap"},{"panel_id":"c","label":"contour heatmap"},{"panel_id":"d","label":"contour heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/Multiscale computational fluid dynamics modeling of thermal atomic layer etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":1011,"height":278,"image_format":"jpeg","image_sha256":"6a9d8377d5db93a5ec1f41102fe5ac8f55326e730473c845e131b3f26182b9cf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":14,"y":41,"width":360,"height":236},{"panel_id":"b","x":394,"y":41,"width":192,"height":237},{"panel_id":"c","x":605,"y":41,"width":191,"height":234},{"panel_id":"d","x":815,"y":41,"width":196,"height":233}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a contour of Reynolds Number (Re) for step A configuration across reactor model G0. The color gradient indicates varying values of Re, with darker shades representing higher values.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays a contour of Reynolds Number (Re) for step A configuration across reactor model G1.\"},{\"panel_id\":\"c\",\"text\":\"The figure displays a contour of Reynolds Number (Re) for step A configuration across reactor model G2.\"},{\"panel_id\":\"d\",\"text\":\"The figure displays a contour of Reynolds Number (Re) for step A configuration across reactor model G3.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Case | Dominant Re Range | Peak Re Region |\\n|------|-------------------|----------------|\\n| G0 | 0.00 – 0.52 | 1.04 – 1.30 |\\n| G1 | 0.00 – 0.52 | 1.04 – 1.30 |\\n| G2 | 0.00 – 0.52 | 1.04 – 1.30 |\\n| G3 | 0.00 – 0.52 | ~1.04 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The assumption is validated by the contours of the Reynolds number at 0.025 s of half-cycle time elapsed at standard reactor operating conditons, which are illustrated in the images . It is observed that the highest Reynolds number is localized at the precursor injection region for Steps A with the largest Reynolds number among all reactor configurations being 1.30 for Step A obtained from the showerhead reactor.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Step A configuration is at 0.025 s\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No turbulent regime is observed throughout all of the reactors due to the atmospheric operating condition which provides more control over the flow pattern. As a result, the flow through the reactor is characterized by laminar behavior\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_17_fig_6.jpg","caption":"Fig. 6. Contours of Reynolds Number for Step B of various reactor configurations at 0.025 s in the standard condition in Table 3.","id":"train/atomic-layer-etching/simulation-usecase/17/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/17/fig_6","subset":"contour-heatmap","split":"train","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"contour heatmap"},{"panel_id":"c","label":"contour heatmap"},{"panel_id":"d","label":"contour heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/Multiscale computational fluid dynamics modeling of thermal atomic layer etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":1011,"height":278,"image_format":"jpeg","image_sha256":"903869a0b7189aa53dfbad88e553793f3e5094d9f07cddae5cc9a281efa28158","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":11,"y":44,"width":364,"height":234},{"panel_id":"b","x":395,"y":44,"width":190,"height":232},{"panel_id":"c","x":604,"y":44,"width":193,"height":231},{"panel_id":"d","x":815,"y":44,"width":196,"height":232}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a contour of Reynolds number (Re) across four different reactor models labeled G0. The color gradient indicates varying values of Re, with warmer colors representing higher values.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays a contour of Reynolds number (Re) across four different reactor models labeled G1\"},{\"panel_id\":\"c\",\"text\":\"The figure displays a contour of Reynolds number (Re) across four different reactor models labeled G2\"},{\"panel_id\":\"d\",\"text\":\"The figure displays a contour of Reynolds number (Re) across four different reactor models labeled G3\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Case | Dominant Re Range | Peak Re Region |\\n|------|-------------------|----------------|\\n| G0 | 0.00 – 0.52 | 2.34 – 2.60 |\\n| G1 | 0.00 – 0.52 | 1.56 – 2.08 |\\n| G2 | 0.00 – 0.52 | 2.34 – 2.60 |\\n| G3 | 0.00 – 0.52 | 1.04 – 1.30 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The highest Reynolds number is localized at the precursor injection region for Step B, with the largest Reynolds number among all reactor configurations being 2.59 for Step B, the value is obtained from the showerhead reactor\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Step B reactor configurations is at 0.025 s\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No turbulent regime is observed throughout all of the reactors due to the atmospheric operating condition which provides more control over the flow pattern. As a result, the flow through the reactor is characterized by laminar behavior\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_17_fig_8.jpg","caption":"Fig. 8. Contours of pressure of HF on the surface of the wafer for a Step A process time of 0.1 s and for a HF feed flow rate of 150 sccm.","id":"train/atomic-layer-etching/simulation-usecase/17/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/17/fig_8","subset":"contour-heatmap","split":"train","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"contour heatmap"},{"panel_id":"c","label":"contour heatmap"},{"panel_id":"d","label":"contour heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/Multiscale computational fluid dynamics modeling of thermal atomic layer etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":1211,"height":361,"image_format":"jpeg","image_sha256":"083acc9420201fe30d093423d33ebdfb9f66beb055165b017b8688df1be2e1b5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":58,"width":442,"height":299},{"panel_id":"b","x":474,"y":79,"width":220,"height":274},{"panel_id":"c","x":718,"y":79,"width":232,"height":277},{"panel_id":"d","x":974,"y":77,"width":236,"height":279}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image displays a contours of the pressure of HF (Hydrofluoric acid) over a wafer across four different conditions for reactor G0. The color gradient represents the pressure values, with red indicating higher pressures and blue indicating lower pressures.\"},{\"panel_id\":\"b\",\"text\":\"The image displays a contours of the pressure of HF (Hydrofluoric acid) over a wafer across four different conditions for reactor G1.\"},{\"panel_id\":\"c\",\"text\":\"The image displays a contours of the pressure of HF (Hydrofluoric acid) over a wafer across four different conditions for reactor G2.\"},{\"panel_id\":\"d\",\"text\":\"The image displays a contours of the pressure of HF (Hydrofluoric acid) over a wafer across four different conditions for reactor G3.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Case | Dominant Pressure Range (Pa) | High-Pressure Region (Pa) |\\n|------|------------------------------|----------------------------|\\n| G0 | 0 – 28 | 35 – 49 |\\n| G1 | 0 – 28 | 28 – 42 |\\n| G2 | 0 – 28 | 49 – 56 |\\n| G3 | 0 – 28 | 28 – 42 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The flow of the reactor with three inlets (G1) is more evenly distributed than that of G0, and consequently, G1 has less pressure deviation than G0.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A process time of 0.1 s and a HF feed flow rate of 150 sccm.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. G0\\n, 2. G2\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_17_fig_9.jpg","caption":"Fig. 9. Contours of pressure of TMA on the surface of the wafer for a Step B process time of 0.2 s and for a TMA feed flow rate of 70 sccm.","id":"train/atomic-layer-etching/simulation-usecase/17/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/17/fig_9","subset":"contour-heatmap","split":"train","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"contour heatmap"},{"panel_id":"c","label":"contour heatmap"},{"panel_id":"d","label":"contour heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/Multiscale computational fluid dynamics modeling of thermal atomic layer etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":1203,"height":364,"image_format":"jpeg","image_sha256":"5f1620ebe3e6e69ff5c53c2cbb3d6bb7763e5769be04777137281150907b32e1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":713,"y":60,"width":235,"height":299},{"panel_id":"b","x":458,"y":11,"width":243,"height":350},{"panel_id":"a","x":4,"y":8,"width":443,"height":352},{"panel_id":"d","x":967,"y":62,"width":235,"height":299}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image displays a contour representing the pressure of TMA (Tetrakis(methoxymethyl)amine) on surface across different reactor models, with color intensity indicating varying pressures for reactor G0\"},{\"panel_id\":\"b\",\"text\":\"The image displays a contour representing the pressure of TMA (Tetrakis(methoxymethyl)amine) on surface across reactor G1.\"},{\"panel_id\":\"c\",\"text\":\"The image displays a contour representing the pressure of TMA (Tetrakis(methoxymethyl)amine) on surface across reactor G1.\"},{\"panel_id\":\"d\",\"text\":\"The image displays a contour representing the pressure of TMA (Tetrakis(methoxymethyl)amine) on surface across reactor G1.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Case | Dominant Pressure Range (Pa) | High-Pressure Region (Pa) |\\n|------|------------------------------|----------------------------|\\n| G0 | 0 – 42 | 56 – 70 |\\n| G1 | 0 – 42 | 49 – 56 |\\n| G2 | 0 – 42 | 63 – 70 |\\n| G3 | 0 – 49 | 42 – 56 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. G0 = 2.514 s\\n, 2. G1 = 2.542 s\\n, 3. G2 = 2.528 s\\n, 4. G3 = 2.498 s\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The pressure contours of TMA and the type of species in the thermal ALE cycle of Al2O3 plays a limited role in affecting the flow profile\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Step B process time is 0.2 s and TMA feed flow rate is 70 sccm.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is observed that the shower- head serves to decrease the amount of precursor in central regions of the wafer, and therefore G2 has better uniformity compared to G0 and G1. The half-cycle times are similar to the half-cycle times of G0 due to the flow resistance of the showerhead divider. Thus, the addition of the showerhead divider improves the uniformity and slightly increases the half-cycle time for Step B.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_11.jpg","caption":"FIG. 11. (Color online) Total Ieads averaged over the wafer during $\\mathrm{SiO}_2$ PALE in the MERIE reactor. The high magnetic field during step 1 enables low ion energies which promote polymer formation. The high ion energies during step 2 enable sputtering of the passivated layer. Controlling the ion energies during step 2 avoids physical etching and enables self-limiting etching.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_11","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_11","subset":"contour-heatmap","split":"train","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"contour heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":364,"height":561,"image_format":"jpeg","image_sha256":"20f82fd4caf1815f2ba04ee744c8d91c5322329218b7618f48cf744898ff900d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":218,"height":557},{"panel_id":"b","x":216,"y":1,"width":145,"height":557}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays the ion energy and angular distribution (IEAD) during the first step (passivation). The color gradient represents relative intensity of ions arriving at that specific energy and angle.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays the ion energy and angular distribution (IEAD) during the second step (etching). The color gradient represents relative intensity of ions arriving at that specific energy and angle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Angle (deg) | Energy (eV) | Intensity |\\n|---|---|---|\\n| -15 | 3 | 0.01 |\\n| 0 | 3 | 0.01 |\\n| 15 | 3 | 0.01 |\\n| -15 | 15 | 0.01 |\\n| -7 | 15 | 0.53 |\\n| 0 | 15 | 1 |\\n| 7 | 15 | 0.53 |\\n| 15 | 15 | 0.01 |\\n| -3 | 58 | 0.01 |\\n| 0 | 58 | 0.53 |\\n| 3 | 58 | 0.01 |\\n| -3 | 83 | 0.01 |\\n| 0 | 83 | 0.53 |\\n| 3 | 83 | 0.01 |\"},{\"panel_id\":\"b\",\"text\":\"| Angle (deg) | Energy (eV) | Intensity |\\n|---|---|---|\\n| 0 | 42 | 0.01 |\\n| -6 | 63 | 0.01 |\\n| 0 | 63 | 0.85 |\\n| 6 | 63 | 0.01 |\\n| -6 | 68 | 0.01 |\\n| 0 | 68 | 1 |\\n| 6 | 68 | 0.01 |\\n| 0 | 75 | 0.01 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ ± 7 degrees.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ 65 - 70 Ev.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ ± 15 degrees.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The most ions arriving at the wafer in are low-energy (with energies below 30 eV). This energy range was chosen to promote passivation.Higher energies would cause sputtering of the surface.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_17.jpg","caption":"FIG. 17. (Color online) Total IEADs averaged over the wafer for PALE with nonsinusoidal biases. First, a main etch is performed with a $200\\mathrm{V}$ (peak-to-peak) sinusoidal bias followed by PALE utilizing a nonsinusoidal bias waveform with biases of $50\\mathrm{V}$ (peak-to-peak) for step 1 (passivation) and $100\\mathrm{V}$ (peak-to-peak) for step 2 (etching). The narrow IEADs with nonsinusoidal biases enable using a single gas mixture for the entire cycle of PALE.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_17","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_17","subset":"contour-heatmap","split":"train","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"contour heatmap"},{"panel_id":"c","label":"contour heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_17.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_17.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":378,"height":464,"image_format":"jpeg","image_sha256":"b33f1d053475354cbac7bc0d8312b3cc08c02ebddcbc9dfcd7523bcecd9fdd91","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":177,"height":464},{"panel_id":"b","x":176,"y":5,"width":103,"height":460},{"panel_id":"c","x":275,"y":6,"width":102,"height":459}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays the ion energy and angular distribution (IEAD) for the main etch using a 200 V bias.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays the ion energy and angular distribution (IEAD) for the passivation step using a 50 V bias.\"},{\"panel_id\":\"c\",\"text\":\"The figure displays the ion energy and angular distribution (IEAD) for the etching step using a 100 V bias.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Angle (deg) | Relative Energy (Ei/Vp-p) | Intensity |\\n|---|---|---|\\n| -10 |0.3 | 0.01 |\\n| 0 | 0.3 | 0.01 |\\n| 10 | 0.3 | 0.01 |\\n| -11 |0.4 | 0.01 |\\n| 0 | 0.4 | 0.53 |\\n| 11 | 0.4 | 0.01 |\\n| -8 |0.54 | 0.01 |\\n| 0 | 0.54 | 0.69 |\\n| 8 | 0.54 | 0.01 |\\n| -9 |0.74 | 0.01 |\\n| 0 | 0.74 | 1 |\\n| 9 | 0.74 | 0.01 |\\n| 0 | 0.86 | 0.01 |\"},{\"panel_id\":\"b\",\"text\":\"| Angle (deg) | Relative Energy (Ei/Vp-p) | Intensity |\\n|---|---|---|\\n| 0 | 0.48 | 0.01 |\\n| -6 |0.58 | 0.01 |\\n| 0 | 0.58 | 0.53 |\\n| 6 | 0.58 | 0.01 |\\n| -9 |0.68 | 0.01 |\\n| 0 | 0.68 | 1 |\\n| 9 | 0.68 | 0.01 |\\n| 0 | 0.85 | 0.01 |\"},{\"panel_id\":\"c\",\"text\":\"| Angle (deg) | Relative Energy (Ei/Vp-p) | Intensity |\\n|---|---|---|\\n| 0 | 0.54 | 0.01 |\\n| -6 | 0.59 | 0.01 |\\n| 0 |0.59 | 0.53 |\\n| 6 | 0.59 | 0.53 |\\n| -10 | 0.7 | 0.01 |\\n| 0 | 0.7 | 1 |\\n| 10 | 0.7 | 0.53 |\\n| 0 | 0.77 | 0.01 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It decrease, when the angle of arrival deviates from the perpendicular direction (0 degrees).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ 0.35 - 0.85.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is a bimodal distribution. The heatmap displays two separated regions of maximum intensity (red/orange/yellow areas). They are located at relative energies of approximately 0.35 and 0.75, separated by a lower-intensity green region.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ ± 10 degrees.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_2.jpg","caption":"FIG. 2. (Color online) Total positive ion densities during the PALE of Si using an ICP reactor. (a) Step 1 (passivation) is performed in $\\mathrm{Ar / Cl}_2 = 80 / 20$ (500 W ICP, 20 mTorr, 100 SCCM) without an applied bias. (b) Step 2 (etching) is performed in pure Ar (500 W ICP, 16 mTorr, 100 SCCM) with a $100\\mathrm{V}$ sinusoidal bias at $2\\mathrm{MHz}$ . Contour levels shown are on a scale of $10^{11}$ . (Densities are plotted using a log scale over 2 decades. The color bar shows the range of the contours relative to the maximum value.)","id":"train/atomic-layer-etching/simulation-usecase/19/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_2","subset":"contour-heatmap","split":"train","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"contour heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":375,"height":1081,"image_format":"jpeg","image_sha256":"8cc42c079edfb9afacaa844cdb9944b12e84a05a0ef0d77af0c9e23ea5515830","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":373,"height":518},{"panel_id":"b","x":0,"y":524,"width":373,"height":559}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_6.jpg","caption":"Figure 6. \"Heat\" maps showing the change in free energy of (a) CVE1 and (b) SL1 reactions for HF exposure on $\\mathrm{TiO_2}$ . (c) Change in corresponding minimum thermodynamic barrier with respect to reactant pressure and temperature.","id":"train/atomic-layer-etching/simulation-usecase/20/figure_6","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_6","subset":"contour-heatmap","split":"train","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"contour heatmap"},{"panel_id":"c","label":"contour heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":1283,"height":455,"image_format":"jpeg","image_sha256":"e5ce3c82e14b6b63bba61588579fa4035b61b8390b3f4906639cd4b3e28a58ec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":844,"y":3,"width":436,"height":447},{"panel_id":"b","x":411,"y":6,"width":428,"height":447},{"panel_id":"a","x":4,"y":3,"width":401,"height":450}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure uses heat maps to visualize the Gibbs free energy (ΔG) for continuous etching (CVE1) and self-limiting modification (SL1) as a function of temperature (X-axis) and reactant pressure (Y-axis). A contour plot showing the reaction conditions favorable or unfavorable for continuous etching (CVE1) across varying temperatures and reactant pressures. Panel (a) shows that CVE1 is “favorable” (green, ΔG < 0) across nearly the entire parameter space, indicating TiO₂ is naturally unstable in HF.\"},{\"panel_id\":\"b\",\"text\":\"A contour plot showing the reaction conditions favorable or unfavorable for self-limiting modification (SL1) across varying temperatures and reactant pressures.\"},{\"panel_id\":\"c\",\"text\":\"A contour plot showing the difference between the two reactions (Y1 − X1) across temperature and pressure. Red regions (Y1 > X1) indicate the self-limiting reaction is energetically preferred (lower ΔG), while green regions (Y1 < X1) indicate continuous etching is preferred. The vertical boundary at 360 K confirms that temperature, not pressure, is the “control knob” dictating the transition between ALE and uncontrolled etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reactant Pressure [Torr] | 0.0 | 0.5 | 1.0 | 1.5 | 2.0 | 2.5 | 3.0 | 3.5 | 4.0 |\\n|---|---|---|---|---|---|---|---|---|---|\\n| 0.0 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 500 K | -1.2 | -1.2 | -1.2 | -1.2 | -1.2 | -1.2 | -1.2 | -1.2 | -1.2 |\\n| 1000 K | -1.6 | -1.6 | -1.6 | -1.6 | -1.6 | -1.6 | -1.6 | -1.6 | -1.6 |\\n| 1500 K | -1.8 | -1.8 | -1.8 | -1.8 | -1.8 | -1.8 | -1.8 | -1.8 | -1.8 |\\n| 2000 K | -2.0 | -2.0 | -2.0 | -2.0 | -2.0 | -2.0 | -2.0 | -2.0 | -2.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature [K] | 0.0 | 500 K | 1000 K | 1500 K | 2000 K |\\n|---|---|---|---|---|---|\\n| 0.0 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 500 K | -1.6 | -1.6 | -1.6 | -1.6 | -1.6 |\\n| 1000 K | -2.0 | -2.0 | -2.0 | -2.0 | -2.0 |\\n| 1500 K | -2.4 | -2.4 | -2.4 | -2.4 | -2.4 |\\n| 2000 K | -2.8 | -2.8 | -2.8 | -2.8 | -2.8 |\"},{\"panel_id\":\"c\",\"text\":\"| Temperature [K] | 0.0 | 500 K | 1000 K | 1500 K | 2000 K |\\n|---|---|---|---|---|---|\\n| 0.0 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 500 K | -0.4 | -0.4 | -0.4 | -0.4 | -0.4 |\\n| 1000 K | -0.8 | -0.8 | -0.8 | -0.8 | -0.8 |\\n| 1500 K | -1.2 | -1.2 | -1.2 | -1.2 | -1.2 |\\n| 2000 K | -1.6 | -1.6 | -1.6 | -1.6 | -1.6 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lack of Fluorination / Pristine Surface. At 1500 K, the $\\\\Delta G$ for SL1 is positive (Unfavorable). This means the surface fluorination reaction is non-spontaneous. XPS would show no Fluorine peak (or very low coverage), as the HF gas would simply desorb rather than reacting to form the necessary TiF_x surface layer.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Max Temperature: 360 K. Pressure Effect: No. The boundary line at 360 K is vertical, indicating that the transition is independent of pressure; increasing pressure does not expand the self-limiting window.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 1000 K, the value of Y1 - X1 is negative (Green), meaning the continuous etching reaction (Y1) has a lower energy than the surface modification (X1). The system will bypass the self-limiting step entirely and continuously consume the device material. This destroys the \\\"atomic layer\\\" control, turning the precision process into a rapid, uncontrolled bulk etch.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It indicates that the TiO₂ lattice is thermodynamically unstable relative to the gaseous products (TiF₄ + H₂O). There is no kinetic or thermodynamic barrier preventing the bulk crystal from disintegrating into gas; the reaction is spontaneous everywhere. This necessitates the use of the self-limiting mechanism (Panels b/c) to artificially stop the reaction at the surface.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_10.jpg","caption":"FIG. 10. (Color online) Reactor geometry and total ion densities in the (left) Cl passivation phase and (right) $\\mathrm{Ar}^+$ ion bombardment phase. A log scale showing two decades is used.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_10","subset":"contour-heatmap","split":"train","classification":[{"panel_id":"a","label":"contour heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":581,"height":505,"image_format":"jpeg","image_sha256":"a15735328218c79069492198bbfccaf1707a0f4a5e0cb25d40d29fb11bff6b02","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":577,"height":500}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The visualization represents the total ion density in a cylindrical region, with color gradients indicating varying densities.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Phase | Location (qualitative) | Total Ion Density (10^11 cm^-3) |\\n|--------------|-------------------------|----------------------------------|\\n| Cl phase | Inner upper lobe | 4.71 |\\n| Cl phase | Lower-left region | 2.15 |\\n| Center line | Interface (mid-height) | 3.86 |\\n| Ar+ phase | Right mid-height | 1.47 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The nonideal fluxes were obtained from reactor scale modeling of an ICP.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. The reactorhas a three-turn flat antenna delivering 300W at 10MHz to the plasma.\\n2. The coil is located above a quartz window 10 cm from the wafer. \\n3. The reactor is 22.5 cm in diameter.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the passivation phase a gas mixture of Ar/Cl2=70/30 at 200 sccm was used with a regulation system maintaining the chamber pressure at 20 mTorr. No bias was applied to the wafer during the passivation phase, however a plasma potential of 25V provided acceleration to ions reaching the wafer surface.\\nThe resulting fluxes to the wafer are 7.0*10^17, 1.1*10^16, 1.6*10^15, and 4.9*10^14 /cm2 s, for Cl, Cl2+, Cl+, and Ar+, with ion energies peaked around 24 V.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_66_figure_2.jpg","caption":"Figure 2. Maps of the coercivity variations for (a) $\\mathrm{ZnO}$ (oxygen deficient) and (b) $\\mathrm{ZnO / Fe}$ ALD layers.","id":"train/atomic-layer-deposition/experimental-usecase/66/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/66/figure_2","subset":"contour-heatmap","split":"train","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"contour heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A contour heatmap showing the magnetic coercivity (Hc) of ZnO (oxygen deficient) particles\"},{\"panel_id\":\"b\",\"text\":\"A contour heatmap showing the magnetic coercivity (Hc) of ZnO:Fe ALD layers\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| X (µm) Range | Y (µm) Range | H_c (Oe) |\\n|---|---|---|\\n| 0–100 | 0–100 | 0–500 |\\n| 100–200 | 0–100 | 500–1500 |\\n| 200–300 | 0–100 | 1500–2500 |\\n| 300–400 | 0–100 | 2500–3500 |\\n| 0–100 | 100–200 | 0–500 |\\n| 100–200 | 100–200 | 500–1500 |\\n| 200–300 | 100–200 | 1500–2500 |\\n| 300–400 | 100–200 | 2500–3500 |\\n| 0–100 | 200–300 | 0–500 |\\n| 100–200 | 200–300 | 500–1500 |\\n| 200–300 | 200–300 | 1500–2500 |\\n| 300–400 | 200–300 | 2500–3500 |\\n| 0–100 | 300–350 | 0–500 |\\n| 100–200 | 300–350 | 500–1500 |\\n| 200–300 | 300–350 | 1500–2500 |\\n| 300–400 | 300–350 | 1500–2500 |\"},{\"panel_id\":\"b\",\"text\":\"| X (µm) Range | Y (µm) Range | H_c (Oe) |\\n|---|---|---|\\n| 0–60 | 0–60 | 0–4000 |\\n| 60–120 | 0–60 | 0–4000 |\\n| 120–180| 0–60 | 0–4000 |\\n| 0–60 | 60–120 | 0–4000 |\\n| 60–120 | 60–120 | 0–4000 |\\n| 120–180| 60–120 | 0–4000 |\\n| 0–60 | 120–180| 0–4000 |\\n| 60–120 | 120–180| 0–4000 |\\n| 120–180| 60–120 | 0–4000 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Coercivity map of the undoped ZnO (oxygen deficient) is uniform\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The observed locations with very high Hc are stochastically distributed and can be assigned to the measurement artefacts.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Hc magnitude, the level of inhomogeneity and the overall magnetization is significantly stronger for the Fe-doped sample\"}]}]","bbox":[{"panel_id":"a","x":3,"y":7,"width":641,"height":543},{"panel_id":"b","x":633,"y":2,"width":650,"height":548}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/Paskaleva et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"66","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:image_caption"},"width":1289,"height":555,"image_format":"jpeg","image_sha256":"5559422d2bf1c02ffe00f342c3a80f2f2ab6f615dfe743bc4d1cdb09810de632","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_66_figure_3.jpg","caption":"Figure 3. Maps of the Kerr angle variations for (a) $\\mathrm{ZnO}$ (oxygen deficient) and (b) $\\mathrm{ZnO / Fe}$ ALD layers.","id":"train/atomic-layer-deposition/experimental-usecase/66/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/66/figure_3","subset":"contour-heatmap","split":"train","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"contour heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a contour heatmap of Kerr rotation angle (θKerr) in millidegrees for oxygen deficient ZnO.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows a contour heatmap of Kerr rotation angle (θKerr) in millidegrees for ZnO:Fe samples.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| X (µm) | Y (µm) | θ_Kerr (mdeg) |\\n|---|---|---|\\n| 0–50 | 0–50 | 0–40 |\\n| 50–100 | 0–50 | 40–80 |\\n| 100–150| 0–50 | 80–120 |\\n| 150–200| 0–50 | 120–160 |\\n| 200–250| 0–50 | 160–200 |\\n| 250–300| 0–50 | 200–220 |\\n| 300–350| 0–50 | 160–200 |\\n| 350–400| 0–50 | 160–200 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Undoped ZnO layers are homogeneous, and the values of θKerr are very small, most of the data are in the range [0−20]\\nmdeg.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ZnO/Fe layer demonstrates inhomogeneous distribution of θKerr whose values are significantly (2 orders of magnitude) larger than those of the undoped layer.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An interesting feature is that both clockwise (positive θKerr) and counterclockwise (negative θKerr) Kerr polarization rotations are observed in the Kerr angle map of Fe-doped ZnO, indicative of complex MO process activity\"}]}]","bbox":[{"panel_id":"a","x":4,"y":3,"width":652,"height":550},{"panel_id":"b","x":659,"y":1,"width":626,"height":553}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/Paskaleva et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"66","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:image_caption"},"width":1292,"height":556,"image_format":"jpeg","image_sha256":"ed0ddf14ba0921433574f86bea53b6a1a3faaeab914c8878f4e151162b58ed93","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_17_fig_5.jpg","caption":"Fig. 5. Contours of Reynolds Number for Step A of various reactor configurations at 0.025 s in the standard condition in Table 3.","id":"train/atomic-layer-etching/simulation-usecase/17/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/17/fig_5","subset":"contour-heatmap","split":"train","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"contour heatmap"},{"panel_id":"c","label":"contour heatmap"},{"panel_id":"d","label":"contour heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a contour of Reynolds Number (Re) for step A configuration across reactor model G0. The color gradient indicates varying values of Re, with darker shades representing higher values.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays a contour of Reynolds Number (Re) for step A configuration across reactor model G1.\"},{\"panel_id\":\"c\",\"text\":\"The figure displays a contour of Reynolds Number (Re) for step A configuration across reactor model G2.\"},{\"panel_id\":\"d\",\"text\":\"The figure displays a contour of Reynolds Number (Re) for step A configuration across reactor model G3.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Case | Dominant Re Range | Peak Re Region |\\n|------|-------------------|----------------|\\n| G0 | 0.00 – 0.52 | 1.04 – 1.30 |\\n| G1 | 0.00 – 0.52 | 1.04 – 1.30 |\\n| G2 | 0.00 – 0.52 | 1.04 – 1.30 |\\n| G3 | 0.00 – 0.52 | ~1.04 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The assumption is validated by the contours of the Reynolds number at 0.025 s of half-cycle time elapsed at standard reactor operating conditons, which are illustrated in the images . It is observed that the highest Reynolds number is localized at the precursor injection region for Steps A with the largest Reynolds number among all reactor configurations being 1.30 for Step A obtained from the showerhead reactor.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Step A configuration is at 0.025 s\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No turbulent regime is observed throughout all of the reactors due to the atmospheric operating condition which provides more control over the flow pattern. As a result, the flow through the reactor is characterized by laminar behavior\"}]}]","bbox":[{"panel_id":"a","x":14,"y":41,"width":360,"height":236},{"panel_id":"b","x":394,"y":41,"width":192,"height":237},{"panel_id":"c","x":605,"y":41,"width":191,"height":234},{"panel_id":"d","x":815,"y":41,"width":196,"height":233}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/Multiscale computational fluid dynamics modeling of thermal atomic layer etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":1011,"height":278,"image_format":"jpeg","image_sha256":"6a9d8377d5db93a5ec1f41102fe5ac8f55326e730473c845e131b3f26182b9cf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_17_fig_6.jpg","caption":"Fig. 6. Contours of Reynolds Number for Step B of various reactor configurations at 0.025 s in the standard condition in Table 3.","id":"train/atomic-layer-etching/simulation-usecase/17/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/17/fig_6","subset":"contour-heatmap","split":"train","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"contour heatmap"},{"panel_id":"c","label":"contour heatmap"},{"panel_id":"d","label":"contour heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a contour of Reynolds number (Re) across four different reactor models labeled G0. The color gradient indicates varying values of Re, with warmer colors representing higher values.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays a contour of Reynolds number (Re) across four different reactor models labeled G1\"},{\"panel_id\":\"c\",\"text\":\"The figure displays a contour of Reynolds number (Re) across four different reactor models labeled G2\"},{\"panel_id\":\"d\",\"text\":\"The figure displays a contour of Reynolds number (Re) across four different reactor models labeled G3\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Case | Dominant Re Range | Peak Re Region |\\n|------|-------------------|----------------|\\n| G0 | 0.00 – 0.52 | 2.34 – 2.60 |\\n| G1 | 0.00 – 0.52 | 1.56 – 2.08 |\\n| G2 | 0.00 – 0.52 | 2.34 – 2.60 |\\n| G3 | 0.00 – 0.52 | 1.04 – 1.30 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The highest Reynolds number is localized at the precursor injection region for Step B, with the largest Reynolds number among all reactor configurations being 2.59 for Step B, the value is obtained from the showerhead reactor\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Step B reactor configurations is at 0.025 s\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No turbulent regime is observed throughout all of the reactors due to the atmospheric operating condition which provides more control over the flow pattern. As a result, the flow through the reactor is characterized by laminar behavior\"}]}]","bbox":[{"panel_id":"a","x":11,"y":44,"width":364,"height":234},{"panel_id":"b","x":395,"y":44,"width":190,"height":232},{"panel_id":"c","x":604,"y":44,"width":193,"height":231},{"panel_id":"d","x":815,"y":44,"width":196,"height":232}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/Multiscale computational fluid dynamics modeling of thermal atomic layer etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":1011,"height":278,"image_format":"jpeg","image_sha256":"903869a0b7189aa53dfbad88e553793f3e5094d9f07cddae5cc9a281efa28158","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_17_fig_8.jpg","caption":"Fig. 8. Contours of pressure of HF on the surface of the wafer for a Step A process time of 0.1 s and for a HF feed flow rate of 150 sccm.","id":"train/atomic-layer-etching/simulation-usecase/17/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/17/fig_8","subset":"contour-heatmap","split":"train","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"contour heatmap"},{"panel_id":"c","label":"contour heatmap"},{"panel_id":"d","label":"contour heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image displays a contours of the pressure of HF (Hydrofluoric acid) over a wafer across four different conditions for reactor G0. The color gradient represents the pressure values, with red indicating higher pressures and blue indicating lower pressures.\"},{\"panel_id\":\"b\",\"text\":\"The image displays a contours of the pressure of HF (Hydrofluoric acid) over a wafer across four different conditions for reactor G1.\"},{\"panel_id\":\"c\",\"text\":\"The image displays a contours of the pressure of HF (Hydrofluoric acid) over a wafer across four different conditions for reactor G2.\"},{\"panel_id\":\"d\",\"text\":\"The image displays a contours of the pressure of HF (Hydrofluoric acid) over a wafer across four different conditions for reactor G3.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Case | Dominant Pressure Range (Pa) | High-Pressure Region (Pa) |\\n|------|------------------------------|----------------------------|\\n| G0 | 0 – 28 | 35 – 49 |\\n| G1 | 0 – 28 | 28 – 42 |\\n| G2 | 0 – 28 | 49 – 56 |\\n| G3 | 0 – 28 | 28 – 42 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The flow of the reactor with three inlets (G1) is more evenly distributed than that of G0, and consequently, G1 has less pressure deviation than G0.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A process time of 0.1 s and a HF feed flow rate of 150 sccm.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. G0\\n, 2. G2\"}]}]","bbox":[{"panel_id":"a","x":7,"y":58,"width":442,"height":299},{"panel_id":"b","x":474,"y":79,"width":220,"height":274},{"panel_id":"c","x":718,"y":79,"width":232,"height":277},{"panel_id":"d","x":974,"y":77,"width":236,"height":279}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/Multiscale computational fluid dynamics modeling of thermal atomic layer etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":1211,"height":361,"image_format":"jpeg","image_sha256":"083acc9420201fe30d093423d33ebdfb9f66beb055165b017b8688df1be2e1b5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_17_fig_9.jpg","caption":"Fig. 9. Contours of pressure of TMA on the surface of the wafer for a Step B process time of 0.2 s and for a TMA feed flow rate of 70 sccm.","id":"train/atomic-layer-etching/simulation-usecase/17/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/17/fig_9","subset":"contour-heatmap","split":"train","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"contour heatmap"},{"panel_id":"c","label":"contour heatmap"},{"panel_id":"d","label":"contour heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image displays a contour representing the pressure of TMA (Tetrakis(methoxymethyl)amine) on surface across different reactor models, with color intensity indicating varying pressures for reactor G0\"},{\"panel_id\":\"b\",\"text\":\"The image displays a contour representing the pressure of TMA (Tetrakis(methoxymethyl)amine) on surface across reactor G1.\"},{\"panel_id\":\"c\",\"text\":\"The image displays a contour representing the pressure of TMA (Tetrakis(methoxymethyl)amine) on surface across reactor G1.\"},{\"panel_id\":\"d\",\"text\":\"The image displays a contour representing the pressure of TMA (Tetrakis(methoxymethyl)amine) on surface across reactor G1.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Case | Dominant Pressure Range (Pa) | High-Pressure Region (Pa) |\\n|------|------------------------------|----------------------------|\\n| G0 | 0 – 42 | 56 – 70 |\\n| G1 | 0 – 42 | 49 – 56 |\\n| G2 | 0 – 42 | 63 – 70 |\\n| G3 | 0 – 49 | 42 – 56 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. G0 = 2.514 s\\n, 2. G1 = 2.542 s\\n, 3. G2 = 2.528 s\\n, 4. G3 = 2.498 s\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The pressure contours of TMA and the type of species in the thermal ALE cycle of Al2O3 plays a limited role in affecting the flow profile\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Step B process time is 0.2 s and TMA feed flow rate is 70 sccm.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is observed that the shower- head serves to decrease the amount of precursor in central regions of the wafer, and therefore G2 has better uniformity compared to G0 and G1. The half-cycle times are similar to the half-cycle times of G0 due to the flow resistance of the showerhead divider. Thus, the addition of the showerhead divider improves the uniformity and slightly increases the half-cycle time for Step B.\"}]}]","bbox":[{"panel_id":"c","x":713,"y":60,"width":235,"height":299},{"panel_id":"b","x":458,"y":11,"width":243,"height":350},{"panel_id":"a","x":4,"y":8,"width":443,"height":352},{"panel_id":"d","x":967,"y":62,"width":235,"height":299}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/Multiscale computational fluid dynamics modeling of thermal atomic layer etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":1203,"height":364,"image_format":"jpeg","image_sha256":"5f1620ebe3e6e69ff5c53c2cbb3d6bb7763e5769be04777137281150907b32e1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_11.jpg","caption":"FIG. 11. (Color online) Total Ieads averaged over the wafer during $\\mathrm{SiO}_2$ PALE in the MERIE reactor. The high magnetic field during step 1 enables low ion energies which promote polymer formation. The high ion energies during step 2 enable sputtering of the passivated layer. Controlling the ion energies during step 2 avoids physical etching and enables self-limiting etching.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_11","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_11","subset":"contour-heatmap","split":"train","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"contour heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays the ion energy and angular distribution (IEAD) during the first step (passivation). The color gradient represents relative intensity of ions arriving at that specific energy and angle.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays the ion energy and angular distribution (IEAD) during the second step (etching). The color gradient represents relative intensity of ions arriving at that specific energy and angle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Angle (deg) | Energy (eV) | Intensity |\\n|---|---|---|\\n| -15 | 3 | 0.01 |\\n| 0 | 3 | 0.01 |\\n| 15 | 3 | 0.01 |\\n| -15 | 15 | 0.01 |\\n| -7 | 15 | 0.53 |\\n| 0 | 15 | 1 |\\n| 7 | 15 | 0.53 |\\n| 15 | 15 | 0.01 |\\n| -3 | 58 | 0.01 |\\n| 0 | 58 | 0.53 |\\n| 3 | 58 | 0.01 |\\n| -3 | 83 | 0.01 |\\n| 0 | 83 | 0.53 |\\n| 3 | 83 | 0.01 |\"},{\"panel_id\":\"b\",\"text\":\"| Angle (deg) | Energy (eV) | Intensity |\\n|---|---|---|\\n| 0 | 42 | 0.01 |\\n| -6 | 63 | 0.01 |\\n| 0 | 63 | 0.85 |\\n| 6 | 63 | 0.01 |\\n| -6 | 68 | 0.01 |\\n| 0 | 68 | 1 |\\n| 6 | 68 | 0.01 |\\n| 0 | 75 | 0.01 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ ± 7 degrees.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ 65 - 70 Ev.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ ± 15 degrees.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The most ions arriving at the wafer in are low-energy (with energies below 30 eV). This energy range was chosen to promote passivation.Higher energies would cause sputtering of the surface.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":1,"width":218,"height":557},{"panel_id":"b","x":216,"y":1,"width":145,"height":557}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":364,"height":561,"image_format":"jpeg","image_sha256":"20f82fd4caf1815f2ba04ee744c8d91c5322329218b7618f48cf744898ff900d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_17.jpg","caption":"FIG. 17. (Color online) Total IEADs averaged over the wafer for PALE with nonsinusoidal biases. First, a main etch is performed with a $200\\mathrm{V}$ (peak-to-peak) sinusoidal bias followed by PALE utilizing a nonsinusoidal bias waveform with biases of $50\\mathrm{V}$ (peak-to-peak) for step 1 (passivation) and $100\\mathrm{V}$ (peak-to-peak) for step 2 (etching). The narrow IEADs with nonsinusoidal biases enable using a single gas mixture for the entire cycle of PALE.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_17","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_17","subset":"contour-heatmap","split":"train","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"contour heatmap"},{"panel_id":"c","label":"contour heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays the ion energy and angular distribution (IEAD) for the main etch using a 200 V bias.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays the ion energy and angular distribution (IEAD) for the passivation step using a 50 V bias.\"},{\"panel_id\":\"c\",\"text\":\"The figure displays the ion energy and angular distribution (IEAD) for the etching step using a 100 V bias.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Angle (deg) | Relative Energy (Ei/Vp-p) | Intensity |\\n|---|---|---|\\n| -10 |0.3 | 0.01 |\\n| 0 | 0.3 | 0.01 |\\n| 10 | 0.3 | 0.01 |\\n| -11 |0.4 | 0.01 |\\n| 0 | 0.4 | 0.53 |\\n| 11 | 0.4 | 0.01 |\\n| -8 |0.54 | 0.01 |\\n| 0 | 0.54 | 0.69 |\\n| 8 | 0.54 | 0.01 |\\n| -9 |0.74 | 0.01 |\\n| 0 | 0.74 | 1 |\\n| 9 | 0.74 | 0.01 |\\n| 0 | 0.86 | 0.01 |\"},{\"panel_id\":\"b\",\"text\":\"| Angle (deg) | Relative Energy (Ei/Vp-p) | Intensity |\\n|---|---|---|\\n| 0 | 0.48 | 0.01 |\\n| -6 |0.58 | 0.01 |\\n| 0 | 0.58 | 0.53 |\\n| 6 | 0.58 | 0.01 |\\n| -9 |0.68 | 0.01 |\\n| 0 | 0.68 | 1 |\\n| 9 | 0.68 | 0.01 |\\n| 0 | 0.85 | 0.01 |\"},{\"panel_id\":\"c\",\"text\":\"| Angle (deg) | Relative Energy (Ei/Vp-p) | Intensity |\\n|---|---|---|\\n| 0 | 0.54 | 0.01 |\\n| -6 | 0.59 | 0.01 |\\n| 0 |0.59 | 0.53 |\\n| 6 | 0.59 | 0.53 |\\n| -10 | 0.7 | 0.01 |\\n| 0 | 0.7 | 1 |\\n| 10 | 0.7 | 0.53 |\\n| 0 | 0.77 | 0.01 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It decrease, when the angle of arrival deviates from the perpendicular direction (0 degrees).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ 0.35 - 0.85.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is a bimodal distribution. The heatmap displays two separated regions of maximum intensity (red/orange/yellow areas). They are located at relative energies of approximately 0.35 and 0.75, separated by a lower-intensity green region.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ ± 10 degrees.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":177,"height":464},{"panel_id":"b","x":176,"y":5,"width":103,"height":460},{"panel_id":"c","x":275,"y":6,"width":102,"height":459}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_17.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_17.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":378,"height":464,"image_format":"jpeg","image_sha256":"b33f1d053475354cbac7bc0d8312b3cc08c02ebddcbc9dfcd7523bcecd9fdd91","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_2.jpg","caption":"FIG. 2. (Color online) Total positive ion densities during the PALE of Si using an ICP reactor. (a) Step 1 (passivation) is performed in $\\mathrm{Ar / Cl}_2 = 80 / 20$ (500 W ICP, 20 mTorr, 100 SCCM) without an applied bias. (b) Step 2 (etching) is performed in pure Ar (500 W ICP, 16 mTorr, 100 SCCM) with a $100\\mathrm{V}$ sinusoidal bias at $2\\mathrm{MHz}$ . Contour levels shown are on a scale of $10^{11}$ . (Densities are plotted using a log scale over 2 decades. The color bar shows the range of the contours relative to the maximum value.)","id":"train/atomic-layer-etching/simulation-usecase/19/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_2","subset":"contour-heatmap","split":"train","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"contour heatmap"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":373,"height":518},{"panel_id":"b","x":0,"y":524,"width":373,"height":559}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":375,"height":1081,"image_format":"jpeg","image_sha256":"8cc42c079edfb9afacaa844cdb9944b12e84a05a0ef0d77af0c9e23ea5515830","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_6.jpg","caption":"Figure 6. \"Heat\" maps showing the change in free energy of (a) CVE1 and (b) SL1 reactions for HF exposure on $\\mathrm{TiO_2}$ . (c) Change in corresponding minimum thermodynamic barrier with respect to reactant pressure and temperature.","id":"train/atomic-layer-etching/simulation-usecase/20/figure_6","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_6","subset":"contour-heatmap","split":"train","classification":[{"panel_id":"a","label":"contour heatmap"},{"panel_id":"b","label":"contour heatmap"},{"panel_id":"c","label":"contour heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure uses heat maps to visualize the Gibbs free energy (ΔG) for continuous etching (CVE1) and self-limiting modification (SL1) as a function of temperature (X-axis) and reactant pressure (Y-axis). A contour plot showing the reaction conditions favorable or unfavorable for continuous etching (CVE1) across varying temperatures and reactant pressures. Panel (a) shows that CVE1 is “favorable” (green, ΔG < 0) across nearly the entire parameter space, indicating TiO₂ is naturally unstable in HF.\"},{\"panel_id\":\"b\",\"text\":\"A contour plot showing the reaction conditions favorable or unfavorable for self-limiting modification (SL1) across varying temperatures and reactant pressures.\"},{\"panel_id\":\"c\",\"text\":\"A contour plot showing the difference between the two reactions (Y1 − X1) across temperature and pressure. Red regions (Y1 > X1) indicate the self-limiting reaction is energetically preferred (lower ΔG), while green regions (Y1 < X1) indicate continuous etching is preferred. The vertical boundary at 360 K confirms that temperature, not pressure, is the “control knob” dictating the transition between ALE and uncontrolled etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reactant Pressure [Torr] | 0.0 | 0.5 | 1.0 | 1.5 | 2.0 | 2.5 | 3.0 | 3.5 | 4.0 |\\n|---|---|---|---|---|---|---|---|---|---|\\n| 0.0 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 500 K | -1.2 | -1.2 | -1.2 | -1.2 | -1.2 | -1.2 | -1.2 | -1.2 | -1.2 |\\n| 1000 K | -1.6 | -1.6 | -1.6 | -1.6 | -1.6 | -1.6 | -1.6 | -1.6 | -1.6 |\\n| 1500 K | -1.8 | -1.8 | -1.8 | -1.8 | -1.8 | -1.8 | -1.8 | -1.8 | -1.8 |\\n| 2000 K | -2.0 | -2.0 | -2.0 | -2.0 | -2.0 | -2.0 | -2.0 | -2.0 | -2.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature [K] | 0.0 | 500 K | 1000 K | 1500 K | 2000 K |\\n|---|---|---|---|---|---|\\n| 0.0 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 500 K | -1.6 | -1.6 | -1.6 | -1.6 | -1.6 |\\n| 1000 K | -2.0 | -2.0 | -2.0 | -2.0 | -2.0 |\\n| 1500 K | -2.4 | -2.4 | -2.4 | -2.4 | -2.4 |\\n| 2000 K | -2.8 | -2.8 | -2.8 | -2.8 | -2.8 |\"},{\"panel_id\":\"c\",\"text\":\"| Temperature [K] | 0.0 | 500 K | 1000 K | 1500 K | 2000 K |\\n|---|---|---|---|---|---|\\n| 0.0 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 500 K | -0.4 | -0.4 | -0.4 | -0.4 | -0.4 |\\n| 1000 K | -0.8 | -0.8 | -0.8 | -0.8 | -0.8 |\\n| 1500 K | -1.2 | -1.2 | -1.2 | -1.2 | -1.2 |\\n| 2000 K | -1.6 | -1.6 | -1.6 | -1.6 | -1.6 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lack of Fluorination / Pristine Surface. At 1500 K, the $\\\\Delta G$ for SL1 is positive (Unfavorable). This means the surface fluorination reaction is non-spontaneous. XPS would show no Fluorine peak (or very low coverage), as the HF gas would simply desorb rather than reacting to form the necessary TiF_x surface layer.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Max Temperature: 360 K. Pressure Effect: No. The boundary line at 360 K is vertical, indicating that the transition is independent of pressure; increasing pressure does not expand the self-limiting window.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 1000 K, the value of Y1 - X1 is negative (Green), meaning the continuous etching reaction (Y1) has a lower energy than the surface modification (X1). The system will bypass the self-limiting step entirely and continuously consume the device material. This destroys the \\\"atomic layer\\\" control, turning the precision process into a rapid, uncontrolled bulk etch.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It indicates that the TiO₂ lattice is thermodynamically unstable relative to the gaseous products (TiF₄ + H₂O). There is no kinetic or thermodynamic barrier preventing the bulk crystal from disintegrating into gas; the reaction is spontaneous everywhere. This necessitates the use of the self-limiting mechanism (Panels b/c) to artificially stop the reaction at the surface.\"}]}]","bbox":[{"panel_id":"c","x":844,"y":3,"width":436,"height":447},{"panel_id":"b","x":411,"y":6,"width":428,"height":447},{"panel_id":"a","x":4,"y":3,"width":401,"height":450}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":1283,"height":455,"image_format":"jpeg","image_sha256":"e5ce3c82e14b6b63bba61588579fa4035b61b8390b3f4906639cd4b3e28a58ec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_10.jpg","caption":"FIG. 10. (Color online) Reactor geometry and total ion densities in the (left) Cl passivation phase and (right) $\\mathrm{Ar}^+$ ion bombardment phase. A log scale showing two decades is used.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_10","subset":"contour-heatmap","split":"train","classification":[{"panel_id":"a","label":"contour heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The visualization represents the total ion density in a cylindrical region, with color gradients indicating varying densities.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Phase | Location (qualitative) | Total Ion Density (10^11 cm^-3) |\\n|--------------|-------------------------|----------------------------------|\\n| Cl phase | Inner upper lobe | 4.71 |\\n| Cl phase | Lower-left region | 2.15 |\\n| Center line | Interface (mid-height) | 3.86 |\\n| Ar+ phase | Right mid-height | 1.47 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The nonideal fluxes were obtained from reactor scale modeling of an ICP.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. The reactorhas a three-turn flat antenna delivering 300W at 10MHz to the plasma.\\n2. The coil is located above a quartz window 10 cm from the wafer. \\n3. The reactor is 22.5 cm in diameter.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the passivation phase a gas mixture of Ar/Cl2=70/30 at 200 sccm was used with a regulation system maintaining the chamber pressure at 20 mTorr. No bias was applied to the wafer during the passivation phase, however a plasma potential of 25V provided acceleration to ions reaching the wafer surface.\\nThe resulting fluxes to the wafer are 7.0*10^17, 1.1*10^16, 1.6*10^15, and 4.9*10^14 /cm2 s, for Cl, Cl2+, Cl+, and Ar+, with ion energies peaked around 24 V.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":577,"height":500}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"contour heatmap","caption_source":"content.json:img_caption"},"width":581,"height":505,"image_format":"jpeg","image_sha256":"a15735328218c79069492198bbfccaf1707a0f4a5e0cb25d40d29fb11bff6b02","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/device-structure-diagram/test/metadata.jsonl b/subsets/device-structure-diagram/test/metadata.jsonl index 9b4f8cd7d342c98252da664d365b6b2b05de36a3..9bb5fc704d683d95ac9e687f844252a211f55809 100644 --- a/subsets/device-structure-diagram/test/metadata.jsonl +++ b/subsets/device-structure-diagram/test/metadata.jsonl @@ -1,4 +1,4 @@ -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_6_fig_1.jpg","caption":"FIG. 1. (Color online) Schematic of the custom-built, hot-wall ALD reactor. The main part is a cylindrical tube, heated externally. The tube is fitted with inlets for $\\mathrm{N}_2$ carrier gas and precursors close to its upstream end. A sample stage with in-situ temperature monitoring is positioned near the center of the tube. A separately pumped mass spectrometer is used to analyze gas sampled downstream of the stage by means of a needle valve. The calculated carrier gas flow and diffusion through the tube indicate even distribution of the gas. The flow profile in the mid section of the tube is shown.","id":"test/atomic-layer-deposition/experimental-usecase/6/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/6/fig_1","subset":"device-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"device structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/Mullings et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"device structure diagram","caption_source":"content.json:img_caption"},"width":1411,"height":677,"image_format":"jpeg","image_sha256":"940c977d2468c14976b944a6a6693f7f7450f9281cb0f2beda22a1f83fcef395","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1411,"height":677}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_1_figure_3.jpg","caption":"Figure 3. FinFET CMOS transistor architecture","id":"test/atomic-layer-etching/experimental-usecase/1/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/1/figure_3","subset":"device-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"device structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/Atomic Layer Etching An Industry Perspective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"device structure diagram","caption_source":"content.json:img_caption"},"width":472,"height":620,"image_format":"jpeg","image_sha256":"577d2de2336bf974813253183b95900eb142a9e9e180b30aea19f9c2877a6dfa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":572,"height":620}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_1_figure_4.jpg","caption":"Figure 4. Gate-All-Around CMOS transistor architecture.","id":"test/atomic-layer-etching/experimental-usecase/1/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/1/figure_4","subset":"device-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"device structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/Atomic Layer Etching An Industry Perspective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"device structure diagram","caption_source":"content.json:img_caption"},"width":472,"height":630,"image_format":"jpeg","image_sha256":"fa380a83cdc155b17c123c3d81d29f147e95b07e70df641427d99fe8af440d10","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":472,"height":630}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_14.jpg","caption":"Fig. 14. Multiscale CFD pressure data of the generation of DMAF in the TMA injection region (a) with and (b) without an EWMA-based R2R control system for $\\lambda = 0.3$ when subjected to a shift disturbance of 0.6 at the 10th batch run.","id":"test/atomic-layer-etching/simulation-usecase/34/fig_14","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_14","subset":"device-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"device structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_14.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"device structure diagram","caption_source":"content.json:image_caption"},"width":872,"height":363,"image_format":"jpeg","image_sha256":"957660513003d43362bc0b2124e8f05594874601a6d4d59439e0f9c6ce14d993","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":872,"height":363}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_6_fig_1.jpg","caption":"FIG. 1. (Color online) Schematic of the custom-built, hot-wall ALD reactor. The main part is a cylindrical tube, heated externally. The tube is fitted with inlets for $\\mathrm{N}_2$ carrier gas and precursors close to its upstream end. A sample stage with in-situ temperature monitoring is positioned near the center of the tube. A separately pumped mass spectrometer is used to analyze gas sampled downstream of the stage by means of a needle valve. The calculated carrier gas flow and diffusion through the tube indicate even distribution of the gas. The flow profile in the mid section of the tube is shown.","id":"test/atomic-layer-deposition/experimental-usecase/6/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/6/fig_1","subset":"device-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"device structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1411,"height":677}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/Mullings et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"device structure diagram","caption_source":"content.json:img_caption"},"width":1411,"height":677,"image_format":"jpeg","image_sha256":"940c977d2468c14976b944a6a6693f7f7450f9281cb0f2beda22a1f83fcef395","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_1_figure_3.jpg","caption":"Figure 3. FinFET CMOS transistor architecture","id":"test/atomic-layer-etching/experimental-usecase/1/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/1/figure_3","subset":"device-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"device structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":572,"height":620}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/Atomic Layer Etching An Industry Perspective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"device structure diagram","caption_source":"content.json:img_caption"},"width":472,"height":620,"image_format":"jpeg","image_sha256":"577d2de2336bf974813253183b95900eb142a9e9e180b30aea19f9c2877a6dfa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_1_figure_4.jpg","caption":"Figure 4. Gate-All-Around CMOS transistor architecture.","id":"test/atomic-layer-etching/experimental-usecase/1/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/1/figure_4","subset":"device-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"device structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":472,"height":630}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/Atomic Layer Etching An Industry Perspective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"device structure diagram","caption_source":"content.json:img_caption"},"width":472,"height":630,"image_format":"jpeg","image_sha256":"fa380a83cdc155b17c123c3d81d29f147e95b07e70df641427d99fe8af440d10","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_14.jpg","caption":"Fig. 14. Multiscale CFD pressure data of the generation of DMAF in the TMA injection region (a) with and (b) without an EWMA-based R2R control system for $\\lambda = 0.3$ when subjected to a shift disturbance of 0.6 at the 10th batch run.","id":"test/atomic-layer-etching/simulation-usecase/34/fig_14","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_14","subset":"device-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"device structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":872,"height":363}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_14.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"device structure diagram","caption_source":"content.json:image_caption"},"width":872,"height":363,"image_format":"jpeg","image_sha256":"957660513003d43362bc0b2124e8f05594874601a6d4d59439e0f9c6ce14d993","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/device-structure-diagram/train/metadata.jsonl b/subsets/device-structure-diagram/train/metadata.jsonl index c0e3f53c2b682715c6ada7c83e2090a2c0ad4449..616d37e5ef4f063a61d4fae73292d680d5d66473 100644 --- a/subsets/device-structure-diagram/train/metadata.jsonl +++ b/subsets/device-structure-diagram/train/metadata.jsonl @@ -1,6 +1,6 @@ -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_9_figure_5.jpg","caption":"Figure 5. (a) Starting heterostructure for InGaAs n-channel FinFETs grown by MBE. (b) Cross-sectional schematics of the FinFET along the source-drain direction and across the fin. Because of the partial ALE selectivity between InGaAs and InAlAs, the InGaAs channel is released. (c) Cross-section TEM image of a finished FinFET with minimum $W_{\\mathrm{f}} = 2.5 \\mathrm{nm}$ and a highest fin aspect ratio $\\mathrm{AR} = 20$ . The inset is a close-up image of the InGaAs channel. (d,e) Output and subthreshold characteristics of the most scaled InGaAs FinFET with $W_{\\mathrm{f}} = 2.5 \\mathrm{nm}$ and $L_{\\mathrm{g}} = 60 \\mathrm{nm}$ . (f) Benchmark of maximum $g_{\\mathrm{m}}$ as a function of $W_{\\mathrm{f}}$ for InGaAs FinFETs and state-of-the-art Si FinFETs. $V_{\\mathrm{DD}} = 0.5 \\mathrm{V}$ for InGaAs FinFETs and $V_{\\mathrm{DD}} = 0.7 \\mathrm{V}$ for the latest two generations of Si FinFETs. The blue data represents results from this work, whereas the red data are obtained from the same heterostructure following an identical process to the present one with the exception of in situ thermal ALE and ALD.7","id":"train/atomic-layer-etching/experimental-usecase/9/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/9/figure_5","subset":"device-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"device structure diagram"},{"panel_id":"b","label":"device structure diagram"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"multiple line chart"},{"panel_id":"e","label":"multi-axis chart"},{"panel_id":"f","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/In Situ Thermal Atomic Layer Etching for Sub5 nm InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"device structure diagram","caption_source":"content.json:img_caption"},"width":1297,"height":797,"image_format":"jpeg","image_sha256":"bef18d61c989af344c6c2607e6667289e479acb7049e2270219a4ae0385f8e44","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"d","x":17,"y":391,"width":400,"height":363},{"panel_id":"b","x":310,"y":5,"width":539,"height":353},{"panel_id":"c","x":861,"y":3,"width":420,"height":357},{"panel_id":"e","x":433,"y":393,"width":413,"height":355},{"panel_id":"f","x":899,"y":386,"width":402,"height":350},{"panel_id":"a","x":80,"y":21,"width":205,"height":322}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Layer stack of FinFET device\"},{\"panel_id\":\"b\",\"text\":\"A schematic of a FinFET device structure and how it is released\"},{\"panel_id\":\"c\",\"text\":\"Microscopic images of a FinFET device highlighting specific layers and features.\"},{\"panel_id\":\"d\",\"text\":\"Output current (ID) versus gate-source voltage (VGS) for a FinFET device.\"},{\"panel_id\":\"e\",\"text\":\"Transfer characteristics of a FinFET device showing drain current (ID) and gate current (IG) versus gate-source voltage (VGS).\"},{\"panel_id\":\"f\",\"text\":\"Gate transconductance (gm) versus fin width (Wf) for Si FinFETs and InGaAs FinFETs compared to this work.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Layer Description | Thickness |\\n|---------------------------------|-----------|\\n| n⁺-In₀.₅₃Ga₀.₄₇As | 30 nm |\\n| InP | 4 nm |\\n| n-In₀.₅₃Ga₀.₄₇As | 50 nm |\\n| In₀.₅₂Al₀.₄₈As | 5 nm |\\n| Si δ-doping | — |\\n| In₀.₅₂Al₀.₄₈As buffer | — |\\n| S.I. InP substrate | — |\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"| Parameter | Value |\\n|-------------------|----------|\\n| Fin Width (W)| 50 nm |\\n| InGaAs | 2.5 nm |\\n| HfO₂ | Present |\"},{\"panel_id\":\"d\",\"text\":\"| V_DS (V) | I_D @ V_GS=-0.2V (µA/µm) | I_D @ V_GS=0.0V (µA/µm) | I_D @ V_GS=0.2V (µA/µm) | I_D @ V_GS=0.4V (µA/µm) | I_D @ V_GS=0.6V (µA/µm) |\\n|----------|---------------------------|--------------------------|--------------------------|--------------------------|--------------------------|\\n| 0.00 | 0 | 0 | 0 | 0 | 0 |\\n| 0.05 | ~2 | ~12 | 60 | 120 | 180 |\\n| 0.10 | 5 | 25 | 100 | 180 | 260 |\\n| 0.15 | ~6 | ~32 | 118 | 200 | 285 |\\n| 0.20 | 8 | 38 | 125 | 210 | 295 |\\n| 0.30 | ~9 | 43 | 130 | 215 | 297 |\\n| 0.50 | 10 | 46 | 132 | 218 | 298 |\"},{\"panel_id\":\"e\",\"text\":\"| VGS (V) | ID (A/µm) | IG (A/µm) |\\n|---|---|---|\\n| -0.2 | 10-9 | 10-9 |\\n| -0.1 | 10-8 | 10-8 |\\n| 0 | 10-7 | 10-7 |\\n| 0.1 | 10-6 | 10-6 |\\n| 0.2 | 10-5 | 10-5 |\\n| 0.3 | 10-4 | 10-4 |\\n| 0.4 | 10-3 | 10-3 |\\n| 0.5 | 10-2 | 10-2 |\"},{\"panel_id\":\"f\",\"text\":\"| W_f (nm) | g_m This Work (mS/µm) | g_m MIT IEDM '17 (mS/µm) | g_m Si FinFETs (mS/µm) | g_m InGaAs FinFETs (mS/µm) |\\n|----------|------------------------|---------------------------|-------------------------|----------------------------|\\n| 20 | 0.8 | — | — | 5 |\\n| 50 | 0.57 | 1.3 | — | 8 |\\n| 10 | 1.45 | 0.75 | 1.55 | 1.11 |\\n| 12 | 1.5 | 0.95 | 1.213 | 1.0 |\\n| 14 | 1.7 | 1.05 | — | 1.517 |\\n| 17 | 1.8 | 1.2 | — | 1.25 |\\n| 20 | 1.9 | 1.35 | — | 1.222 |\\n| 22 | — | 1.45 | — | 1.123 |\\n| 25 | — | 1.5 | — | 1.252 |\\n| 27 | — | — | — | 1.352 |\\n| 28 | — | — | — | 0.65 |\\n| 30 | — | — | — | 1.153 |\\n| 33 | — | — | — | 1.537 |\\n| 37 | — | — | — | 1.4 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After 162 cycles of thermal ALE with HF/DMAC 300 °C with PDMAC = 40 mTorr, \\n1. Fin width, Wf ranged from 2.5 to 18 nm\\n2. Gate length, Lg was 60 nm.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The image f benchmarks the maximum gm as a function of Wf for InGaAs FinFETs as well as state-of-the-art Si FinFETs. Among the InGaAs FinFETs, the devices in this paper are the most aggressively scaled in the width dimension. In addition to the results listed above for Wf = 2.5 nm, the InGaAs FinFET in\\nthis paper demonstrated a record gm at Wf below 20 nm. The gm of the InGaAs FinFETs around Wf = 7 nm also approaches that of the second generation Si FinFETs despite a lower VDD = 0.5 V and longer gate length. These results highlight the great potential of this novel technique for future generations of CMOS technology and other device applications.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The device exhibited well-behaved MOSFET characteristics with nearly ideal linear (VDS = 50 mV) and saturation (VDS = 0.5 V) subthreshold swing, Slin and\\nSsat, of 62 and 68 mV/dec, respectively.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_9.jpg","caption":"FIG. 9. (Color online) Plasma properties during $\\mathrm{SiO}_2$ PALE using a MERIE CCP reactor. (a) Schematic of the reactor. The magnetic field, when applied, is parallel to the electrode. (b) $\\mathrm{CF}_2$ density. Step 1 is performed in a $\\mathrm{Ar / C_4F_8 = 75 / 25}$ gas mixture (500 W, 50 mTorr, 100 SCCM, 250 G). The high magnetic field shifts the ions to lower energies. (c) $\\mathrm{Ar^{+}}$ density during step 2 performed in pure Ar (100 W, 40 mTorr, 300 SCCM). A magnetic field is not used. (Plots are on a log scale over 2 decades.)","id":"train/atomic-layer-etching/simulation-usecase/19/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_9","subset":"device-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"device structure diagram"},{"panel_id":"b","label":"contour heatmap"},{"panel_id":"c","label":"contour heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"device structure diagram","caption_source":"content.json:img_caption"},"width":672,"height":591,"image_format":"jpeg","image_sha256":"ee7bdb384431d425d5d0ecd5792630ba756d25d349227620b668510c8786b247","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":668,"height":160},{"panel_id":"b","x":1,"y":177,"width":669,"height":161},{"panel_id":"c","x":1,"y":354,"width":670,"height":233}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_27_fig_1.jpg","caption":"FIG. 1. (a) Simplified MicroLED structure where surface damage increasingly limits the external quantum efficiency as devices scale down. (b) The general structure of a GaN MISHEMT device showing the recess into the GaN layer. Etching of the recess using reactive ion etching can lead to a rough interface, degrading the device performance.","id":"train/atomic-layer-etching/simulation-usecase/27/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/27/fig_1","subset":"device-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"device structure diagram"},{"panel_id":"b","label":"device structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"device structure diagram","caption_source":"content.json:image_caption"},"width":672,"height":805,"image_format":"jpeg","image_sha256":"0de7b5a0a5337ab1019a03f04fa5d236e45b37d839cf3d1760c012d02a765dba","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":10,"width":672,"height":389},{"panel_id":"b","x":17,"y":452,"width":655,"height":353}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Cross-sectional schematic of a GaN-based MicroLED with a multi-quantum well (MQW) region of alternating InxGa1-xN/GaN layers. The inset highlights etch damage at sidewalls, which limits external quantum efficiency as devices scale down.\"},{\"panel_id\":\"b\",\"text\":\"Cross-sectional schematic of a recessed-gate GaN MISHEMT showing the SiN/AlN/AlGaN/GaN heterostructure on Si substrate. The 2DEG channel at the AlGaN/GaN interface is indicated, and the inset shows etch damage from reactive ion etching of the gate recess.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Etch damage at the sidewalls increasingly limits the external quantum efficiency.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Reactive ion etching (RIE).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Alternating layers of InxGa1-xN and GaN.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 2DEG (two-dimensional electron gas) is a highly conductive electron channel that forms at the AlGaN/GaN heterointerface due to spontaneous and piezoelectric polarization effects. This confined electron layer enables extremely high electron mobility because carriers are spatially separated from ionized donors, reducing scattering. The 2DEG is fundamental to HEMT operation as it allows for superior switching frequencies compared to conventional transistors.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_14.jpg","caption":"FIG. 14. (Color online) Initial geometry used for the gate etch case study. The crystalline silicon (c-Si) fin travels back into the page, as indicated by the dotted lines. The resist masks the poly-silicon gate structure, which is pre-etched to a depth just above the top of the fins.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_14","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_14","subset":"device-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"device structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"device structure diagram","caption_source":"content.json:img_caption"},"width":578,"height":452,"image_format":"jpeg","image_sha256":"d254a4e6677541b7935e1888a29c61e6ea96f3287c16063aa2b97ab1f0fda4fa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":1,"width":574,"height":448}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_1.jpg","caption":"FIG. 1. Schematic of the experimental apparatus. The plasma is powered by an inductively coupled coil at the top and by a RF biased substrate stage. The major measurements are of the etch rate (via laser interferometry) and optical emission spectroscopy of species near the silicon substrate being etched during the $\\mathsf{Ar}^+$ bombardment stage of ALE.","id":"train/atomic-layer-etching/simulation-usecase/6/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_1","subset":"device-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"device structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"device structure diagram","caption_source":"content.json:img_caption"},"width":672,"height":500,"image_format":"jpeg","image_sha256":"23d424d5ea8e667ce1c7e1e199603122594711e4cef6b3a84d8ff51c90356628","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":672,"height":500}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_8_fig_1.jpg","caption":"FIG. 1. (a) Simplified MicroLED structure where surface damage increasingly limits the external quantum efficiency as devices scale down. (b) The general structure of a GaN MISHEMT device showing the recess into the GaN layer. Etching of the recess using reactive ion etching can lead to a rough interface, degrading the device performance.","id":"train/atomic-layer-etching/simulation-usecase/8/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/8/fig_1","subset":"device-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"device structure diagram"},{"panel_id":"b","label":"device structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/Isotropic atomic layer etching of GaN using SF6 plasma and AI(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"device structure diagram","caption_source":"content.json:img_caption"},"width":672,"height":805,"image_format":"jpeg","image_sha256":"0de7b5a0a5337ab1019a03f04fa5d236e45b37d839cf3d1760c012d02a765dba","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":669,"height":396},{"panel_id":"b","x":0,"y":436,"width":671,"height":368}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A cross-sectional view of a multi-quantum well semiconductor structure, including etch damage due to ion etching.\"},{\"panel_id\":\"b\",\"text\":\"A cross-sectional view of a GaN MISHEMT structure, including etch damage due to ion etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Silicon nitride is used as an isolating layer between the source, drain, and gate regions to overcome parasitic capacitance.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Typical dielectrics include aluminum oxide and hafnium oxide. In the past, silicon oxide was widely used.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The well is doped with indium.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Reactive ion and radical species in the plasma can damage the interface between the different layers in the device, resulting in less sharp edges leading to lower device efficiencies.\"}]}]"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_9_figure_5.jpg","caption":"Figure 5. (a) Starting heterostructure for InGaAs n-channel FinFETs grown by MBE. (b) Cross-sectional schematics of the FinFET along the source-drain direction and across the fin. Because of the partial ALE selectivity between InGaAs and InAlAs, the InGaAs channel is released. (c) Cross-section TEM image of a finished FinFET with minimum $W_{\\mathrm{f}} = 2.5 \\mathrm{nm}$ and a highest fin aspect ratio $\\mathrm{AR} = 20$ . The inset is a close-up image of the InGaAs channel. (d,e) Output and subthreshold characteristics of the most scaled InGaAs FinFET with $W_{\\mathrm{f}} = 2.5 \\mathrm{nm}$ and $L_{\\mathrm{g}} = 60 \\mathrm{nm}$ . (f) Benchmark of maximum $g_{\\mathrm{m}}$ as a function of $W_{\\mathrm{f}}$ for InGaAs FinFETs and state-of-the-art Si FinFETs. $V_{\\mathrm{DD}} = 0.5 \\mathrm{V}$ for InGaAs FinFETs and $V_{\\mathrm{DD}} = 0.7 \\mathrm{V}$ for the latest two generations of Si FinFETs. The blue data represents results from this work, whereas the red data are obtained from the same heterostructure following an identical process to the present one with the exception of in situ thermal ALE and ALD.7","id":"train/atomic-layer-etching/experimental-usecase/9/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/9/figure_5","subset":"device-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"device structure diagram"},{"panel_id":"b","label":"device structure diagram"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"multiple line chart"},{"panel_id":"e","label":"multi-axis chart"},{"panel_id":"f","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Layer stack of FinFET device\"},{\"panel_id\":\"b\",\"text\":\"A schematic of a FinFET device structure and how it is released\"},{\"panel_id\":\"c\",\"text\":\"Microscopic images of a FinFET device highlighting specific layers and features.\"},{\"panel_id\":\"d\",\"text\":\"Output current (ID) versus gate-source voltage (VGS) for a FinFET device.\"},{\"panel_id\":\"e\",\"text\":\"Transfer characteristics of a FinFET device showing drain current (ID) and gate current (IG) versus gate-source voltage (VGS).\"},{\"panel_id\":\"f\",\"text\":\"Gate transconductance (gm) versus fin width (Wf) for Si FinFETs and InGaAs FinFETs compared to this work.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Layer Description | Thickness |\\n|---------------------------------|-----------|\\n| n⁺-In₀.₅₃Ga₀.₄₇As | 30 nm |\\n| InP | 4 nm |\\n| n-In₀.₅₃Ga₀.₄₇As | 50 nm |\\n| In₀.₅₂Al₀.₄₈As | 5 nm |\\n| Si δ-doping | — |\\n| In₀.₅₂Al₀.₄₈As buffer | — |\\n| S.I. InP substrate | — |\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"| Parameter | Value |\\n|-------------------|----------|\\n| Fin Width (W)| 50 nm |\\n| InGaAs | 2.5 nm |\\n| HfO₂ | Present |\"},{\"panel_id\":\"d\",\"text\":\"| V_DS (V) | I_D @ V_GS=-0.2V (µA/µm) | I_D @ V_GS=0.0V (µA/µm) | I_D @ V_GS=0.2V (µA/µm) | I_D @ V_GS=0.4V (µA/µm) | I_D @ V_GS=0.6V (µA/µm) |\\n|----------|---------------------------|--------------------------|--------------------------|--------------------------|--------------------------|\\n| 0.00 | 0 | 0 | 0 | 0 | 0 |\\n| 0.05 | ~2 | ~12 | 60 | 120 | 180 |\\n| 0.10 | 5 | 25 | 100 | 180 | 260 |\\n| 0.15 | ~6 | ~32 | 118 | 200 | 285 |\\n| 0.20 | 8 | 38 | 125 | 210 | 295 |\\n| 0.30 | ~9 | 43 | 130 | 215 | 297 |\\n| 0.50 | 10 | 46 | 132 | 218 | 298 |\"},{\"panel_id\":\"e\",\"text\":\"| VGS (V) | ID (A/µm) | IG (A/µm) |\\n|---|---|---|\\n| -0.2 | 10-9 | 10-9 |\\n| -0.1 | 10-8 | 10-8 |\\n| 0 | 10-7 | 10-7 |\\n| 0.1 | 10-6 | 10-6 |\\n| 0.2 | 10-5 | 10-5 |\\n| 0.3 | 10-4 | 10-4 |\\n| 0.4 | 10-3 | 10-3 |\\n| 0.5 | 10-2 | 10-2 |\"},{\"panel_id\":\"f\",\"text\":\"| W_f (nm) | g_m This Work (mS/µm) | g_m MIT IEDM '17 (mS/µm) | g_m Si FinFETs (mS/µm) | g_m InGaAs FinFETs (mS/µm) |\\n|----------|------------------------|---------------------------|-------------------------|----------------------------|\\n| 20 | 0.8 | — | — | 5 |\\n| 50 | 0.57 | 1.3 | — | 8 |\\n| 10 | 1.45 | 0.75 | 1.55 | 1.11 |\\n| 12 | 1.5 | 0.95 | 1.213 | 1.0 |\\n| 14 | 1.7 | 1.05 | — | 1.517 |\\n| 17 | 1.8 | 1.2 | — | 1.25 |\\n| 20 | 1.9 | 1.35 | — | 1.222 |\\n| 22 | — | 1.45 | — | 1.123 |\\n| 25 | — | 1.5 | — | 1.252 |\\n| 27 | — | — | — | 1.352 |\\n| 28 | — | — | — | 0.65 |\\n| 30 | — | — | — | 1.153 |\\n| 33 | — | — | — | 1.537 |\\n| 37 | — | — | — | 1.4 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After 162 cycles of thermal ALE with HF/DMAC 300 °C with PDMAC = 40 mTorr, \\n1. Fin width, Wf ranged from 2.5 to 18 nm\\n2. Gate length, Lg was 60 nm.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The image f benchmarks the maximum gm as a function of Wf for InGaAs FinFETs as well as state-of-the-art Si FinFETs. Among the InGaAs FinFETs, the devices in this paper are the most aggressively scaled in the width dimension. In addition to the results listed above for Wf = 2.5 nm, the InGaAs FinFET in\\nthis paper demonstrated a record gm at Wf below 20 nm. The gm of the InGaAs FinFETs around Wf = 7 nm also approaches that of the second generation Si FinFETs despite a lower VDD = 0.5 V and longer gate length. These results highlight the great potential of this novel technique for future generations of CMOS technology and other device applications.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The device exhibited well-behaved MOSFET characteristics with nearly ideal linear (VDS = 50 mV) and saturation (VDS = 0.5 V) subthreshold swing, Slin and\\nSsat, of 62 and 68 mV/dec, respectively.\"}]}]","bbox":[{"panel_id":"d","x":17,"y":391,"width":400,"height":363},{"panel_id":"b","x":310,"y":5,"width":539,"height":353},{"panel_id":"c","x":861,"y":3,"width":420,"height":357},{"panel_id":"e","x":433,"y":393,"width":413,"height":355},{"panel_id":"f","x":899,"y":386,"width":402,"height":350},{"panel_id":"a","x":80,"y":21,"width":205,"height":322}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/In Situ Thermal Atomic Layer Etching for Sub5 nm InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"device structure diagram","caption_source":"content.json:img_caption"},"width":1297,"height":797,"image_format":"jpeg","image_sha256":"bef18d61c989af344c6c2607e6667289e479acb7049e2270219a4ae0385f8e44","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_9.jpg","caption":"FIG. 9. (Color online) Plasma properties during $\\mathrm{SiO}_2$ PALE using a MERIE CCP reactor. (a) Schematic of the reactor. The magnetic field, when applied, is parallel to the electrode. (b) $\\mathrm{CF}_2$ density. Step 1 is performed in a $\\mathrm{Ar / C_4F_8 = 75 / 25}$ gas mixture (500 W, 50 mTorr, 100 SCCM, 250 G). The high magnetic field shifts the ions to lower energies. (c) $\\mathrm{Ar^{+}}$ density during step 2 performed in pure Ar (100 W, 40 mTorr, 300 SCCM). A magnetic field is not used. (Plots are on a log scale over 2 decades.)","id":"train/atomic-layer-etching/simulation-usecase/19/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_9","subset":"device-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"device structure diagram"},{"panel_id":"b","label":"contour heatmap"},{"panel_id":"c","label":"contour heatmap"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":0,"width":668,"height":160},{"panel_id":"b","x":1,"y":177,"width":669,"height":161},{"panel_id":"c","x":1,"y":354,"width":670,"height":233}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"device structure diagram","caption_source":"content.json:img_caption"},"width":672,"height":591,"image_format":"jpeg","image_sha256":"ee7bdb384431d425d5d0ecd5792630ba756d25d349227620b668510c8786b247","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_27_fig_1.jpg","caption":"FIG. 1. (a) Simplified MicroLED structure where surface damage increasingly limits the external quantum efficiency as devices scale down. (b) The general structure of a GaN MISHEMT device showing the recess into the GaN layer. Etching of the recess using reactive ion etching can lead to a rough interface, degrading the device performance.","id":"train/atomic-layer-etching/simulation-usecase/27/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/27/fig_1","subset":"device-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"device structure diagram"},{"panel_id":"b","label":"device structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Cross-sectional schematic of a GaN-based MicroLED with a multi-quantum well (MQW) region of alternating InxGa1-xN/GaN layers. The inset highlights etch damage at sidewalls, which limits external quantum efficiency as devices scale down.\"},{\"panel_id\":\"b\",\"text\":\"Cross-sectional schematic of a recessed-gate GaN MISHEMT showing the SiN/AlN/AlGaN/GaN heterostructure on Si substrate. The 2DEG channel at the AlGaN/GaN interface is indicated, and the inset shows etch damage from reactive ion etching of the gate recess.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Etch damage at the sidewalls increasingly limits the external quantum efficiency.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Reactive ion etching (RIE).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Alternating layers of InxGa1-xN and GaN.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 2DEG (two-dimensional electron gas) is a highly conductive electron channel that forms at the AlGaN/GaN heterointerface due to spontaneous and piezoelectric polarization effects. This confined electron layer enables extremely high electron mobility because carriers are spatially separated from ionized donors, reducing scattering. The 2DEG is fundamental to HEMT operation as it allows for superior switching frequencies compared to conventional transistors.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":10,"width":672,"height":389},{"panel_id":"b","x":17,"y":452,"width":655,"height":353}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"device structure diagram","caption_source":"content.json:image_caption"},"width":672,"height":805,"image_format":"jpeg","image_sha256":"0de7b5a0a5337ab1019a03f04fa5d236e45b37d839cf3d1760c012d02a765dba","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_14.jpg","caption":"FIG. 14. (Color online) Initial geometry used for the gate etch case study. The crystalline silicon (c-Si) fin travels back into the page, as indicated by the dotted lines. The resist masks the poly-silicon gate structure, which is pre-etched to a depth just above the top of the fins.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_14","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_14","subset":"device-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"device structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":1,"width":574,"height":448}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"device structure diagram","caption_source":"content.json:img_caption"},"width":578,"height":452,"image_format":"jpeg","image_sha256":"d254a4e6677541b7935e1888a29c61e6ea96f3287c16063aa2b97ab1f0fda4fa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_1.jpg","caption":"FIG. 1. Schematic of the experimental apparatus. The plasma is powered by an inductively coupled coil at the top and by a RF biased substrate stage. The major measurements are of the etch rate (via laser interferometry) and optical emission spectroscopy of species near the silicon substrate being etched during the $\\mathsf{Ar}^+$ bombardment stage of ALE.","id":"train/atomic-layer-etching/simulation-usecase/6/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_1","subset":"device-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"device structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":672,"height":500}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"device structure diagram","caption_source":"content.json:img_caption"},"width":672,"height":500,"image_format":"jpeg","image_sha256":"23d424d5ea8e667ce1c7e1e199603122594711e4cef6b3a84d8ff51c90356628","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_8_fig_1.jpg","caption":"FIG. 1. (a) Simplified MicroLED structure where surface damage increasingly limits the external quantum efficiency as devices scale down. (b) The general structure of a GaN MISHEMT device showing the recess into the GaN layer. Etching of the recess using reactive ion etching can lead to a rough interface, degrading the device performance.","id":"train/atomic-layer-etching/simulation-usecase/8/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/8/fig_1","subset":"device-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"device structure diagram"},{"panel_id":"b","label":"device structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A cross-sectional view of a multi-quantum well semiconductor structure, including etch damage due to ion etching.\"},{\"panel_id\":\"b\",\"text\":\"A cross-sectional view of a GaN MISHEMT structure, including etch damage due to ion etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Silicon nitride is used as an isolating layer between the source, drain, and gate regions to overcome parasitic capacitance.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Typical dielectrics include aluminum oxide and hafnium oxide. In the past, silicon oxide was widely used.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The well is doped with indium.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Reactive ion and radical species in the plasma can damage the interface between the different layers in the device, resulting in less sharp edges leading to lower device efficiencies.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":669,"height":396},{"panel_id":"b","x":0,"y":436,"width":671,"height":368}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/Isotropic atomic layer etching of GaN using SF6 plasma and AI(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"device structure diagram","caption_source":"content.json:img_caption"},"width":672,"height":805,"image_format":"jpeg","image_sha256":"0de7b5a0a5337ab1019a03f04fa5d236e45b37d839cf3d1760c012d02a765dba","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/device-structure-diagram/validation/metadata.jsonl b/subsets/device-structure-diagram/validation/metadata.jsonl index 6877ff7fc63a70b1a130d77bb98443c572bb6854..0b6530acb59b2c57d1771d7658ea0931c37fdd7e 100644 --- a/subsets/device-structure-diagram/validation/metadata.jsonl +++ b/subsets/device-structure-diagram/validation/metadata.jsonl @@ -1 +1 @@ -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig_3.jpg","caption":"Fig. 3 Schematic reresentations of the ractors used in this work: a) an Oxford Instruments FlexAL reactor and (b) a home-built ALD reactor equipped with an in situ FTIR setup, shown here in transmission mode for powder samples. The angle of the IR mirrors on the detector and source side can be adjusted such that planar samples can be studied in reflection mode. Both systems are pumped with turbo pumps and use an inductively coupled plasma source supplied with 13.56 MHz RF power.","id":"validation/atomic-layer-etching/experimental-usecase/10/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/10/fig_3","subset":"device-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"device structure diagram"},{"panel_id":"b","label":"device structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"device structure diagram","caption_source":"content.json:img_caption"},"width":1122,"height":497,"image_format":"jpeg","image_sha256":"0696a2f4d9b52ae8006667213f7520d7359e7395b7fa42d2cc4a28c02f727283","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":7,"width":502,"height":490},{"panel_id":"b","x":524,"y":6,"width":591,"height":489}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig_3.jpg","caption":"Fig. 3 Schematic reresentations of the ractors used in this work: a) an Oxford Instruments FlexAL reactor and (b) a home-built ALD reactor equipped with an in situ FTIR setup, shown here in transmission mode for powder samples. The angle of the IR mirrors on the detector and source side can be adjusted such that planar samples can be studied in reflection mode. Both systems are pumped with turbo pumps and use an inductively coupled plasma source supplied with 13.56 MHz RF power.","id":"validation/atomic-layer-etching/experimental-usecase/10/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/10/fig_3","subset":"device-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"device structure diagram"},{"panel_id":"b","label":"device structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":8,"y":7,"width":502,"height":490},{"panel_id":"b","x":524,"y":6,"width":591,"height":489}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"device structure diagram","caption_source":"content.json:img_caption"},"width":1122,"height":497,"image_format":"jpeg","image_sha256":"0696a2f4d9b52ae8006667213f7520d7359e7395b7fa42d2cc4a28c02f727283","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/formula/train/metadata.jsonl b/subsets/formula/train/metadata.jsonl index ef83e0c99f9f651a74872a2551c8eb7c9a163c19..c35473fbf03d6c4f627c8258abe6810989c120d3 100644 --- a/subsets/formula/train/metadata.jsonl +++ b/subsets/formula/train/metadata.jsonl @@ -1 +1 @@ -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_6d9d789b47e735586a02443aad8b1a7ba33fbab48fbe9bad4ef64f0aa85a2052.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/31/6d9d789b47e735586a02443aad8b1a7ba33fbab48fbe9bad4ef64f0aa85a2052","sample_id":"atomic-layer-deposition/simulation-usecase/31/6d9d789b47e735586a02443aad8b1a7ba33fbab48fbe9bad4ef64f0aa85a2052","subset":"formula","split":"train","classification":[{"panel_id":"a","label":"formula"},{"panel_id":"b","label":"formula"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/6d9d789b47e735586a02443aad8b1a7ba33fbab48fbe9bad4ef64f0aa85a2052.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/6d9d789b47e735586a02443aad8b1a7ba33fbab48fbe9bad4ef64f0aa85a2052.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"formula","caption_source":"not_found"},"width":653,"height":245,"image_format":"jpeg","image_sha256":"ff07c6fdb5274201c02fb9eb63d40c828fffa7e93587ec713d0c8c37abf6114d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":6,"width":647,"height":109},{"panel_id":"b","x":6,"y":113,"width":646,"height":131}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_6d9d789b47e735586a02443aad8b1a7ba33fbab48fbe9bad4ef64f0aa85a2052.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/31/6d9d789b47e735586a02443aad8b1a7ba33fbab48fbe9bad4ef64f0aa85a2052","sample_id":"atomic-layer-deposition/simulation-usecase/31/6d9d789b47e735586a02443aad8b1a7ba33fbab48fbe9bad4ef64f0aa85a2052","subset":"formula","split":"train","classification":[{"panel_id":"a","label":"formula"},{"panel_id":"b","label":"formula"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":6,"width":647,"height":109},{"panel_id":"b","x":6,"y":113,"width":646,"height":131}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/6d9d789b47e735586a02443aad8b1a7ba33fbab48fbe9bad4ef64f0aa85a2052.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/6d9d789b47e735586a02443aad8b1a7ba33fbab48fbe9bad4ef64f0aa85a2052.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"formula","caption_source":"not_found"},"width":653,"height":245,"image_format":"jpeg","image_sha256":"ff07c6fdb5274201c02fb9eb63d40c828fffa7e93587ec713d0c8c37abf6114d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/grouped-bar-chart/test/metadata.jsonl b/subsets/grouped-bar-chart/test/metadata.jsonl index af265446745cf2f37eac03e3afd4fa2cd6521c62..d85b0d46183a10abd942e857fb7fa7570c682be7 100644 --- a/subsets/grouped-bar-chart/test/metadata.jsonl +++ b/subsets/grouped-bar-chart/test/metadata.jsonl @@ -1,3 +1,3 @@ -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_33_figure_5.jpg","caption":"Figure 5. Mobility of graphene determined by Hall measurements, after transfer, after plasma treatment, after 100 cycles $\\mathrm{Al}_2\\mathrm{O}_3$ ALD, and after $400^{\\circ}\\mathrm{C}$ anneal for pristine, $\\mathrm{O}_2$ , and $\\mathrm{H}_2$ plasma treated graphene.","id":"test/atomic-layer-deposition/simulation-usecase/33/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/33/figure_5","subset":"grouped-bar-chart","split":"test","classification":[{"panel_id":"a","label":"grouped bar chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"grouped bar chart","caption_source":"content.json:img_caption"},"width":642,"height":347,"image_format":"jpeg","image_sha256":"5b6f3bd42626024de78ac94ff57ea874c1b05843a64fe9984efba26577688fe2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":642,"height":347}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Grouped bar chart of Hall mobility for graphene samples after transfer, after plasma treatment, after 100 cycles Al2O3 ALD, and after a 400 C anneal, comparing pristine graphene to 30 s O2 plasma and 35 s H2 plasma conditions. Plasma treatment strongly reduces mobility (about 195 cm2/(V s) for O2 and 467 cm2/(V s) for H2), while Al2O3 ALD and subsequent anneal recover mobility, with the H2 plasma sample reaching about 2190 cm2/(V s) after the 400 C anneal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Pristine (cm²/(V·s)) | Plasma Treatment (cm²/(V·s)) | Al₂O₃ ALD (cm²/(V·s)) | 400°C Anneal (cm²/(V·s)) |\\n|---|---|---|---|---|\\n| Pristine | 1300 | X | 1500 | 1850 |\\n| O₂ Plasma 30s | 1800 | 180 | 1400 | 1620 |\\n| H₂ Plasma 35s | 1450 | 450 | 1480 | 2200 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They represent the Hall mobility measured after graphene transfer, before any plasma treatment, for each sample set.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both plasmas reduce mobility, but O2 plasma causes a larger drop, to about 195 cm2/(V s), while H2 plasma reduces it to about 467 cm2/(V s). After 100 Al2O3 ALD cycles, the O2 treated sample partially recovers to about 1390 cm2/(V s), while the H2 treated sample recovers to about 1470 cm2/(V s), roughly returning to its initial value. After the 400 C anneal, the O2 treated sample reaches about 1630 cm2/(V s), whereas the H2 treated sample improves further to about 2190 cm2/(V s).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The paper attributes the mobility drop to plasma induced conversion of sp2 carbon toward sp3 bonding and the formation of out of plane bonds. These added bonds and associated functional groups act as scattering centers for charge carriers, which reduces mobility. This interpretation is consistent with the XPS and Raman evidence of increased sp3 character after plasma exposure.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"H2 plasma functionalization plus Al2O3 ALD plus 400 C anneal: mobility recovers to the initial value after ALD and then increases to about 152% of the original value after anneal (about 2190 cm2/(V s)).\\n\\nO2 plasma functionalization plus Al2O3 ALD plus 400 C anneal: mobility improves strongly after ALD and anneal but remains below the initial value (about 91% recovery, around 1630 cm2/(V s)), indicating incomplete reversibility.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_14.jpg","caption":"Figure 14. Atomic percentage of various elements measured by XPS after different etching conditions: (orange) unetched AlN sample, (green) after 50 cycles of $\\mathrm{XeF}_2 / \\mathrm{BCl}_3$ , (blue) after 50 cycles of $\\mathrm{XeF}_2 / \\mathrm{BCl}_3 / \\mathrm{H}_2\\mathrm{O}$ , and (red) after 50 cycles of $\\mathrm{XeF}_2 / \\mathrm{BCl}_3$ ending with a $\\mathrm{H}_2\\mathrm{O}$ exposure for $5\\mathrm{~s~}$ .","id":"test/atomic-layer-etching/experimental-usecase/20/figure_14","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_14","subset":"grouped-bar-chart","split":"test","classification":[{"panel_id":"a","label":"grouped bar chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_14.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"grouped bar chart","caption_source":"content.json:img_caption"},"width":658,"height":547,"image_format":"jpeg","image_sha256":"7faed0e08c7ea40f46143502bdfc0fc330f4e3e089903f02c2ca11d904e7349e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":653,"height":541}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The grouped bar chart compares the atomic percentage of various elements (Al, N, O, Cl, F) across four different conditions: AlN Survey, 50 cycles XeF₂/BCl₃, 50 cycles XeF₂/BCl₃/H₂O, and 50 cycles XeF₂/BCl₃ End w/ H₂O. The atomic % decreases from Al to F for each condition.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Element | AlN Survey | 50 cycles XeF₂/BCl₃ | 50 cycles XeF₂/BCl₃/H₂O | 50 cycles XeF₂/BCl₃ End w/ H₂O |\\n| --- | --- | --- | --- | --- |\\n| Al | 49 | 50 | 38 | 47 |\\n| N | 24 | 26 | 22 | 36 |\\n| O | 26 | 6 | 25 | 13 |\\n| Cl | - | 10 | 11 | 1 |\\n| F | - | 5 | 4 | 3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The unreacted AlN sample, after 50 cycles of XeF2/BCl3, after 50 cycles of XeF2/BCl3/H2O and after 50 cycles of XeF2/BCl3 ending with a H2O exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After 50 cycles of XeF2/BCl3, the atomic percentage increases slightly, but then decreases with the addition of water. It increases again after 50 cycles of XeF2/BCl2 end with H2O.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The lowest oxygen atomic percentage can be observed after 50 cycles of XeF2/BCl3.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The water step at the end of the cycle reduces the atomic percentage of F, but not that of Cl.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_41_fig_7.jpg","caption":"FIG. 7. Atomic fraction of a TiN surface after the oxidation, fluorination, and removal steps of the TiN ALE process. The oxidation step was performed using $\\Omega_{2}$ at 5 SCCM, 0.05 Torr, $100^{\\circ}\\mathrm{C}$ , and $15\\mathrm{W}$ , and the fluorination step was performed using $\\mathrm{CF_4}$ at 2 SCCM, 0.03 Torr, $100^{\\circ}\\mathrm{C}$ , and $15\\mathrm{W}$ . At the removal step, the temperature was increased to $150^{\\circ}\\mathrm{C}$ with an Ar of 50 SCCM for $30\\mathrm{s}$ without RF power.","id":"test/atomic-layer-etching/experimental-usecase/41/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/41/fig_7","subset":"grouped-bar-chart","split":"test","classification":[{"panel_id":"a","label":"grouped bar chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/Plasma atomic layer etching for titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"grouped bar chart","caption_source":"content.json:image_caption"},"width":539,"height":411,"image_format":"jpeg","image_sha256":"91c8ec2ab0af965be3af0cae2a163c12b3c2eddc2073da01bd1c1e06abb5e8d3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":2,"width":530,"height":406}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS-derived atomic composition of a TiN surface tracked through a full thermal ALE cycle. Oxidation strongly increases surface oxygen (~40 at.%), indicating formation of an oxide layer. Fluorination introduces fluorine (~13 at.%) while reducing oxygen, consistent with formation of a fluorinated surface layer. The final thermal removal step nearly eliminates fluorine (~1 at.%) and restores a TiN-like surface composition with recovered Ti and N fractions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Process step | Ti (%) | N (%) | O (%) | F (%) | C (%) |\\n|---------------------|--------|-------|-------|-------|-------|\\n| Reference (TiN) | ~33 | ~32 | ~19 | ~0 | ~17 |\\n| Oxidation | ~27 | ~18 | ~40 | ~0 | ~15 |\\n| Fluorination | ~27 | ~19 | ~20 | ~13 | ~20 |\\n| Removal | ~34 | ~34 | ~19 | ~1 | ~12 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The auto summary correctly listed the elements and processing stages but did not interpret the chemical evolution of the surface. I replaced it with a concise, mechanism-aware description that links composition changes to oxidation, fluorination, and fluorine removal.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After the removal step, the nitrogen fraction (~34 at.%) slightly exceeds that of the reference surface (~32 at.%). This indicates effective restoration of a TiN-like surface after elimination of the modified fluorinated layer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The fluorinated surface species formed during CF₄ exposure are thermally less stable than bulk TiN. Mild heating under inert Ar promotes desorption or decomposition of these fluorine-containing species, as evidenced by the sharp reduction in F atomic fraction, while leaving the underlying TiN largely intact.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_33_figure_5.jpg","caption":"Figure 5. Mobility of graphene determined by Hall measurements, after transfer, after plasma treatment, after 100 cycles $\\mathrm{Al}_2\\mathrm{O}_3$ ALD, and after $400^{\\circ}\\mathrm{C}$ anneal for pristine, $\\mathrm{O}_2$ , and $\\mathrm{H}_2$ plasma treated graphene.","id":"test/atomic-layer-deposition/simulation-usecase/33/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/33/figure_5","subset":"grouped-bar-chart","split":"test","classification":[{"panel_id":"a","label":"grouped bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Grouped bar chart of Hall mobility for graphene samples after transfer, after plasma treatment, after 100 cycles Al2O3 ALD, and after a 400 C anneal, comparing pristine graphene to 30 s O2 plasma and 35 s H2 plasma conditions. Plasma treatment strongly reduces mobility (about 195 cm2/(V s) for O2 and 467 cm2/(V s) for H2), while Al2O3 ALD and subsequent anneal recover mobility, with the H2 plasma sample reaching about 2190 cm2/(V s) after the 400 C anneal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Pristine (cm²/(V·s)) | Plasma Treatment (cm²/(V·s)) | Al₂O₃ ALD (cm²/(V·s)) | 400°C Anneal (cm²/(V·s)) |\\n|---|---|---|---|---|\\n| Pristine | 1300 | X | 1500 | 1850 |\\n| O₂ Plasma 30s | 1800 | 180 | 1400 | 1620 |\\n| H₂ Plasma 35s | 1450 | 450 | 1480 | 2200 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They represent the Hall mobility measured after graphene transfer, before any plasma treatment, for each sample set.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both plasmas reduce mobility, but O2 plasma causes a larger drop, to about 195 cm2/(V s), while H2 plasma reduces it to about 467 cm2/(V s). After 100 Al2O3 ALD cycles, the O2 treated sample partially recovers to about 1390 cm2/(V s), while the H2 treated sample recovers to about 1470 cm2/(V s), roughly returning to its initial value. After the 400 C anneal, the O2 treated sample reaches about 1630 cm2/(V s), whereas the H2 treated sample improves further to about 2190 cm2/(V s).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The paper attributes the mobility drop to plasma induced conversion of sp2 carbon toward sp3 bonding and the formation of out of plane bonds. These added bonds and associated functional groups act as scattering centers for charge carriers, which reduces mobility. This interpretation is consistent with the XPS and Raman evidence of increased sp3 character after plasma exposure.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"H2 plasma functionalization plus Al2O3 ALD plus 400 C anneal: mobility recovers to the initial value after ALD and then increases to about 152% of the original value after anneal (about 2190 cm2/(V s)).\\n\\nO2 plasma functionalization plus Al2O3 ALD plus 400 C anneal: mobility improves strongly after ALD and anneal but remains below the initial value (about 91% recovery, around 1630 cm2/(V s)), indicating incomplete reversibility.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":642,"height":347}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"grouped bar chart","caption_source":"content.json:img_caption"},"width":642,"height":347,"image_format":"jpeg","image_sha256":"5b6f3bd42626024de78ac94ff57ea874c1b05843a64fe9984efba26577688fe2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_14.jpg","caption":"Figure 14. Atomic percentage of various elements measured by XPS after different etching conditions: (orange) unetched AlN sample, (green) after 50 cycles of $\\mathrm{XeF}_2 / \\mathrm{BCl}_3$ , (blue) after 50 cycles of $\\mathrm{XeF}_2 / \\mathrm{BCl}_3 / \\mathrm{H}_2\\mathrm{O}$ , and (red) after 50 cycles of $\\mathrm{XeF}_2 / \\mathrm{BCl}_3$ ending with a $\\mathrm{H}_2\\mathrm{O}$ exposure for $5\\mathrm{~s~}$ .","id":"test/atomic-layer-etching/experimental-usecase/20/figure_14","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_14","subset":"grouped-bar-chart","split":"test","classification":[{"panel_id":"a","label":"grouped bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The grouped bar chart compares the atomic percentage of various elements (Al, N, O, Cl, F) across four different conditions: AlN Survey, 50 cycles XeF₂/BCl₃, 50 cycles XeF₂/BCl₃/H₂O, and 50 cycles XeF₂/BCl₃ End w/ H₂O. The atomic % decreases from Al to F for each condition.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Element | AlN Survey | 50 cycles XeF₂/BCl₃ | 50 cycles XeF₂/BCl₃/H₂O | 50 cycles XeF₂/BCl₃ End w/ H₂O |\\n| --- | --- | --- | --- | --- |\\n| Al | 49 | 50 | 38 | 47 |\\n| N | 24 | 26 | 22 | 36 |\\n| O | 26 | 6 | 25 | 13 |\\n| Cl | - | 10 | 11 | 1 |\\n| F | - | 5 | 4 | 3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The unreacted AlN sample, after 50 cycles of XeF2/BCl3, after 50 cycles of XeF2/BCl3/H2O and after 50 cycles of XeF2/BCl3 ending with a H2O exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After 50 cycles of XeF2/BCl3, the atomic percentage increases slightly, but then decreases with the addition of water. It increases again after 50 cycles of XeF2/BCl2 end with H2O.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The lowest oxygen atomic percentage can be observed after 50 cycles of XeF2/BCl3.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The water step at the end of the cycle reduces the atomic percentage of F, but not that of Cl.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":3,"width":653,"height":541}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_14.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"grouped bar chart","caption_source":"content.json:img_caption"},"width":658,"height":547,"image_format":"jpeg","image_sha256":"7faed0e08c7ea40f46143502bdfc0fc330f4e3e089903f02c2ca11d904e7349e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_41_fig_7.jpg","caption":"FIG. 7. Atomic fraction of a TiN surface after the oxidation, fluorination, and removal steps of the TiN ALE process. The oxidation step was performed using $\\Omega_{2}$ at 5 SCCM, 0.05 Torr, $100^{\\circ}\\mathrm{C}$ , and $15\\mathrm{W}$ , and the fluorination step was performed using $\\mathrm{CF_4}$ at 2 SCCM, 0.03 Torr, $100^{\\circ}\\mathrm{C}$ , and $15\\mathrm{W}$ . At the removal step, the temperature was increased to $150^{\\circ}\\mathrm{C}$ with an Ar of 50 SCCM for $30\\mathrm{s}$ without RF power.","id":"test/atomic-layer-etching/experimental-usecase/41/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/41/fig_7","subset":"grouped-bar-chart","split":"test","classification":[{"panel_id":"a","label":"grouped bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS-derived atomic composition of a TiN surface tracked through a full thermal ALE cycle. Oxidation strongly increases surface oxygen (~40 at.%), indicating formation of an oxide layer. Fluorination introduces fluorine (~13 at.%) while reducing oxygen, consistent with formation of a fluorinated surface layer. The final thermal removal step nearly eliminates fluorine (~1 at.%) and restores a TiN-like surface composition with recovered Ti and N fractions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Process step | Ti (%) | N (%) | O (%) | F (%) | C (%) |\\n|---------------------|--------|-------|-------|-------|-------|\\n| Reference (TiN) | ~33 | ~32 | ~19 | ~0 | ~17 |\\n| Oxidation | ~27 | ~18 | ~40 | ~0 | ~15 |\\n| Fluorination | ~27 | ~19 | ~20 | ~13 | ~20 |\\n| Removal | ~34 | ~34 | ~19 | ~1 | ~12 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The auto summary correctly listed the elements and processing stages but did not interpret the chemical evolution of the surface. I replaced it with a concise, mechanism-aware description that links composition changes to oxidation, fluorination, and fluorine removal.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After the removal step, the nitrogen fraction (~34 at.%) slightly exceeds that of the reference surface (~32 at.%). This indicates effective restoration of a TiN-like surface after elimination of the modified fluorinated layer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The fluorinated surface species formed during CF₄ exposure are thermally less stable than bulk TiN. Mild heating under inert Ar promotes desorption or decomposition of these fluorine-containing species, as evidenced by the sharp reduction in F atomic fraction, while leaving the underlying TiN largely intact.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":4,"y":2,"width":530,"height":406}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/Plasma atomic layer etching for titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"grouped bar chart","caption_source":"content.json:image_caption"},"width":539,"height":411,"image_format":"jpeg","image_sha256":"91c8ec2ab0af965be3af0cae2a163c12b3c2eddc2073da01bd1c1e06abb5e8d3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/grouped-bar-chart/train/metadata.jsonl b/subsets/grouped-bar-chart/train/metadata.jsonl index 105a8bc50caad86565845c5c29f7d9978ceda3b6..5d72f963a9b7180e813b84a22fd070d654dee921 100644 --- a/subsets/grouped-bar-chart/train/metadata.jsonl +++ b/subsets/grouped-bar-chart/train/metadata.jsonl @@ -1,6 +1,6 @@ -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_3.jpg","caption":"Figure 3. (a) Growth rates of the GeSe films grown via the ALD-DFM and conventional ALD process. (b) Growth rates according to the pulse pressure adjusted through the metering valve. (c) Model for the film growth during the ALD-DFM process for the efficient removal of the physisorbed molecules.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_3","subset":"grouped-bar-chart","split":"train","classification":[{"panel_id":"a","label":"grouped bar chart"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"grouped bar chart","caption_source":"content.json:image_caption"},"width":1005,"height":1811,"image_format":"jpeg","image_sha256":"0143cf2631edf240b330c458d5ae98a3be6a87e6f5ecf1b9789ec9167a788c59","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":56,"width":473,"height":401},{"panel_id":"b","x":535,"y":62,"width":450,"height":398},{"panel_id":"c","x":79,"y":506,"width":926,"height":1299}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_57_figure_2.jpg","caption":"Figure 2. Variation of contribution of entropy relative to the empty surface. Values are in $\\mathrm{kJ}\\mathrm{mol}^{-1}$ over the selected reaction $\\mathrm{A01}\\rightarrow \\mathrm{A02}$ $\\rightarrow \\mathrm{A03TS}\\rightarrow \\mathrm{A04}$ . See Figures 3 and S2 for details.","id":"train/atomic-layer-deposition/simulation-usecase/57/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/57/figure_2","subset":"grouped-bar-chart","split":"train","classification":[{"panel_id":"a","label":"grouped bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/C. Goehry et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"grouped bar chart","caption_source":"content.json:image_caption"},"width":545,"height":411,"image_format":"jpeg","image_sha256":"8f0632233faedf5c28b12993adc6777cde7aca967a1d2352df7640367722a36c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":540,"height":403}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the entropy contribution in kJ·mol⁻¹ for different categories (A02, A03TS, A04) across various subcategories (N1, N3, N4, N5, Nf2, Nf3, Nf4). Each category has multiple subcategories represented by different patterns. The A04 category shows the lowest energy contribution, against A03TS which has the highest values.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Entropy contribution (kJ·mol⁻¹) | A02 | A03TS | A04 |\\n|---|---|---|---|\\n| N1 | 105 | 155 | 18 |\\n| N3 | 110 | 121 | 30 |\\n| N4 | 110 | 122 | 22 |\\n| N5 | 118 | - | 32 |\\n| Nf2 | 98 | 113 | 37 |\\n| Nf3 | - | 125 | 32 |\\n| Nf4 | 111 | - | 22 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The N1, N3, N4, N5, Nf2, Nf3 and Nf4 clusters were used to determine the entropy contribution.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The entropy contribution increases for all clusters from A01 to A03TS, but decreases for all clusters at A04.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The A04 reaction exhibits the lowest energy contribution of all the clusters.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Overall, the entropy contribution along the reactions is very similar for both cases involving frozen and non-frozen atoms.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_30_fig_5.jpg","caption":"Fig. 5. Results of XPS analysis of AlGaN surface. (a) Initial, (b) $\\mathrm{Cl}_2$ ALE, and (c) $\\mathrm{BCl}_3 / \\mathrm{Cl}_2$ ALE.","id":"train/atomic-layer-etching/experimental-usecase/30/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/30/fig_5","subset":"grouped-bar-chart","split":"train","classification":[{"panel_id":"a","label":"grouped bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/Atomic layer etching of GaN and AlGaN.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"grouped bar chart","caption_source":"content.json:image_caption"},"width":547,"height":334,"image_format":"jpeg","image_sha256":"f997f8aa84ad3c5556e000daeb99fb609168b3ad1234674c6eb490a7a463c5d7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":543,"height":331}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The grouped bar chart shows XPS atom percent for the initial AlGaN surface, after Cl2 ALE, and after BCl3 and Cl2 ALE.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Ga (Atom %) | N (Atom %) | Al (Atom %) | O (Atom %) |\\n|---|---|---|---|---|\\n| (a) Initial | 50 | 45 | 5 | 3 |\\n| (b) Cl₂ | 35 | 42 | 5 | 18 |\\n| (c) BCl₃/Cl₂ | 48 | 42 | 5 | 5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ga has the highest atom percent in (a).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"O is very low in (a), increases strongly in (b) after Cl2 ALE, then decreases in (c) after BCl3 and Cl2 ALE to a level closer to the initial condition.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It suggests the surface remains GaN like or Ga rich and N rich at the top surface within the XPS sampling depth, rather than being dominated by an oxide or a thick overlayer of other species.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Cl2 process may leave a surface that is more prone to post process oxidation before XPS measurement.\\n\\nThe BCl3 and Cl2 process may produce a surface condition that results in less oxygen containing residue or less surface oxidation when exposed to air.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_26_fig_8.jpg","caption":"FIG. 8. Dominant desorbed species during the desorption steps for different $\\mathrm{Ar^{+}}$ ion energies in the thin (a) and thick (b) Cl layer deposition cases. Reflected or desorbed Ar ions or atoms are not counted.","id":"train/atomic-layer-etching/simulation-usecase/26/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/26/fig_8","subset":"grouped-bar-chart","split":"train","classification":[{"panel_id":"a","label":"grouped bar chart"},{"panel_id":"b","label":"grouped bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/Surface damage formation during atomic layer etching of silicon with chlorine adsorption.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"grouped bar chart","caption_source":"content.json:img_caption"},"width":1339,"height":525,"image_format":"jpeg","image_sha256":"d217d6886735661e16f4ca46320e6b24c35934f9488f79ff32fb959593ca38ea","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":13,"y":15,"width":629,"height":470},{"panel_id":"b","x":699,"y":15,"width":640,"height":461}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the percentage of Si/Cl based desorbed species for thin Cl layer deposition at different electron energies (20 eV, 30 eV, 40 eV, 50 eV, 60 eV).\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the percentage of Si/Cl based desorbed species for thick Cl layer deposition at different electron energies (20 eV, 30 eV, 40 eV, 50 eV, 60 eV).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Desorbed Species | Cl | Si | SiCl | SiCl2 |\\n|---|---|---|---|---|\\n| 20 eV | 35% | 38% | 21% | 6% |\\n| 30 eV | 30% | 50% | 17% | 3% |\\n| 40 eV | 18% | 69% | 11% | 2% |\\n| 50 eV | 10% | 78% | 6% | 1% |\\n| 60 eV | 8% | 82% | 5% | 1% |\"},{\"panel_id\":\"b\",\"text\":\"| Desorbed Species | Cl | Si | SiCl | SiCl2 | Cl2 | SiCl3 | SiCl4 |\\n|---|---|---|---|---|---|---|---|\\n| 20 eV | 65% | 30% | 5% | 2% | 1% | 1% | 1% |\\n| 30 eV | 45% | 45% | 10% | 5% | 1% | 1% | 1% |\\n| 40 eV | 35% | 38% | 12% | 6% | 1% | 1% | 1% |\\n| 50 eV | 25% | 30% | 15% | 7% | 1% | 1% | 1% |\\n| 60 eV | 20% | 25% | 18% | 8% | 1% | 1% | 1% |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Cl\\n, 2. Si\\n, 3. SiCl\\n, 4. SiCl2\\n, 5. Cl2\\n, 6. SiCl3\\n, 7. SiCl4\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No Ar atom or ion emitted or reflected from the surface is counted because most of the incident Arþ ions are reflected once they hit the surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the case of thin Cl layer deposition, only a small percentage of Cl bonded Si species such as SiCl and SiCl2 desorbed from the surface. This is most likely due to the limited availability of Cl atoms on the surface under the thin Cl layer deposition conditions. The percentage of monoatomic Si atoms as desorbed species increases with the increasing Ar+ ion energy, which indicates that physical sputtering In case of Si by Ar+ ion impact dominates at higher ion incident energy. For thick Cl deposited films, tt is seen in (b), where more Cl atoms are available for surface reactions, that desorbed species with higher Cl content, including SiCl3 and SiCl4, are more visible.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_figure_10.jpg","caption":"Figure 10. Number distribution of etching products with regard to $\\theta_{\\mathrm{in}}$ . The error bars indicate the standard deviations among three independent runs.","id":"train/atomic-layer-etching/simulation-usecase/33/figure_10","sample_id":"atomic-layer-etching/simulation-usecase/33/figure_10","subset":"grouped-bar-chart","split":"train","classification":[{"panel_id":"a","label":"grouped bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"grouped bar chart","caption_source":"content.json:image_caption"},"width":875,"height":416,"image_format":"jpeg","image_sha256":"c3b87b092ecfc5031d0f66907fcb1dc87fdab5651641564b120c085c5390d8ba","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":875,"height":416}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The grouped bar chart displays the number of molecular products generated for a range of gas species—including SiFₓ (x = 1–4), N-based species (N, NH, NH₂, NH₃, N₂), and composite species (SiₓNᵧ)—as a function of incident angle from 0° to 75°. Fluorinated silicon products like SiF₃ and SiF₄ show higher formation at intermediate angles (15°–60°), while nitrogen-containing products like NH₃ and N₂ vary more moderately across the angle range. Notably, the counts for SiₓNᵧ products tend to decrease at higher angles. The variation in product distribution with angle suggests angular dependence in surface reaction dynamics, affecting both fluorination and nitridation pathways.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gas species | Si | SiF | SiF2 | SiF3 | SiF4 | N | NH | NH2 | NH3 | N2 | SixNy |\\n|---|---|---|---|---|---|---|---|---|---|---|---|\\n| 0° | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |\\n| 15° | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |\\n| 30° | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |\\n| 45° | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |\\n| 60° | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |\\n| 75° | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The number of molecules formed for each gas species varies with the angle of incidence, indicating that reaction dynamics are angle-dependent. For instance, the formation of fluorinated silicon species such as SiF₃ and SiF₄ increases notably at mid-range angles (e.g., 30°–60°), while their production is lower at steeper angles (75°) and normal incidence (0°). Similarly, the generation of nitrogen-containing species (NHₓ, N₂) appears more stable across angles, although NH₃ shows a slight decrease at high angles. Composite products like SiₓNᵧ also decline in number with increasing angle, suggesting reduced recombination at oblique incidences.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiF₄\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_figure_7.jpg","caption":"Figure 7. Number distribution of etching products with regard to $E_{\\mathrm{in}}$ . The error bars indicate the standard deviations among three independent runs.","id":"train/atomic-layer-etching/simulation-usecase/33/figure_7","sample_id":"atomic-layer-etching/simulation-usecase/33/figure_7","subset":"grouped-bar-chart","split":"train","classification":[{"panel_id":"a","label":"grouped bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"grouped bar chart","caption_source":"content.json:image_caption"},"width":875,"height":414,"image_format":"jpeg","image_sha256":"fe5a0323ac9dad15d2da34f5b87a6e3cc4dde693e2f4aab7dd032a9cbc902200","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":875,"height":414}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This grouped bar chart illustrates how the formation of various gas-phase species evolves with increasing incident energy from 10 eV to 50 eV. Fluorinated silicon products (e.g., SiF₂, SiF₃, SiF₄) show a marked increase with energy, with SiF₄ becoming the dominant species at energies ≥30 eV. Nitrogen-containing species like NH₃ and N₂ also increase in abundance, particularly NH₃, which appears early at 10 eV and continues rising through 50 eV. Notably, the composite product SiₓNᵧ only emerges at 50 eV, indicating that higher energy input is necessary for the formation of complex bonded species. This energy-dependent profile provides insight into how plasma etching or energetic surface reactions can be tuned by controlling incident energy.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gas species | Si | SiF | SiF₂ | SiF₃ | SiF₄ | N | NH | NH₂ | NH₃ | N₂ | SiₓNy |\\n|---|---|---|---|---|---|---|---|---|---|---|---|\\n| 10 eV | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 15 | 5 | 0 |\\n| 20 eV | 0 | 0 | 0 | 0 | 5 | 0 | 0 | 0 | 30 | 10 | 0 |\\n| 30 eV | 0 | 0 | 5 | 5 | 35 | 0 | 0 | 0 | 40 | 20 | 0 |\\n| 40 eV | 0 | 0 | 10 | 5 | 40 | 0 | 0 | 0 | 45 | 25 | 0 |\\n| 50 eV | 0 | 2 | 25 | 5 | 40 | 0 | 0 | 0 | 45 | 30 | 15 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the incident energy increases from 10 eV to 50 eV, the number of fluorinated silicon species rises substantially, with SiF₄ becoming the most abundant at higher energies. Low-energy exposures (10–20 eV) yield primarily NH₃ and N₂, while fluorinated species like SiF₂ and SiF₃ only begin to appear around 30 eV. SiₓNᵧ species, indicative of more complex reaction products, are only observed at 50 eV, suggesting that higher energy is required to break and reform bonds involving both Si and N. This trend highlights a shift from simple desorption products to more reactive, fragmented, or recombined species as energy increases.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"NH₃.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_3.jpg","caption":"Figure 3. (a) Growth rates of the GeSe films grown via the ALD-DFM and conventional ALD process. (b) Growth rates according to the pulse pressure adjusted through the metering valve. (c) Model for the film growth during the ALD-DFM process for the efficient removal of the physisorbed molecules.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_3","subset":"grouped-bar-chart","split":"train","classification":[{"panel_id":"a","label":"grouped bar chart"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":56,"width":473,"height":401},{"panel_id":"b","x":535,"y":62,"width":450,"height":398},{"panel_id":"c","x":79,"y":506,"width":926,"height":1299}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"grouped bar chart","caption_source":"content.json:image_caption"},"width":1005,"height":1811,"image_format":"jpeg","image_sha256":"0143cf2631edf240b330c458d5ae98a3be6a87e6f5ecf1b9789ec9167a788c59","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_57_figure_2.jpg","caption":"Figure 2. Variation of contribution of entropy relative to the empty surface. Values are in $\\mathrm{kJ}\\mathrm{mol}^{-1}$ over the selected reaction $\\mathrm{A01}\\rightarrow \\mathrm{A02}$ $\\rightarrow \\mathrm{A03TS}\\rightarrow \\mathrm{A04}$ . See Figures 3 and S2 for details.","id":"train/atomic-layer-deposition/simulation-usecase/57/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/57/figure_2","subset":"grouped-bar-chart","split":"train","classification":[{"panel_id":"a","label":"grouped bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the entropy contribution in kJ·mol⁻¹ for different categories (A02, A03TS, A04) across various subcategories (N1, N3, N4, N5, Nf2, Nf3, Nf4). Each category has multiple subcategories represented by different patterns. The A04 category shows the lowest energy contribution, against A03TS which has the highest values.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Entropy contribution (kJ·mol⁻¹) | A02 | A03TS | A04 |\\n|---|---|---|---|\\n| N1 | 105 | 155 | 18 |\\n| N3 | 110 | 121 | 30 |\\n| N4 | 110 | 122 | 22 |\\n| N5 | 118 | - | 32 |\\n| Nf2 | 98 | 113 | 37 |\\n| Nf3 | - | 125 | 32 |\\n| Nf4 | 111 | - | 22 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The N1, N3, N4, N5, Nf2, Nf3 and Nf4 clusters were used to determine the entropy contribution.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The entropy contribution increases for all clusters from A01 to A03TS, but decreases for all clusters at A04.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The A04 reaction exhibits the lowest energy contribution of all the clusters.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Overall, the entropy contribution along the reactions is very similar for both cases involving frozen and non-frozen atoms.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":540,"height":403}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/C. Goehry et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"grouped bar chart","caption_source":"content.json:image_caption"},"width":545,"height":411,"image_format":"jpeg","image_sha256":"8f0632233faedf5c28b12993adc6777cde7aca967a1d2352df7640367722a36c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_30_fig_5.jpg","caption":"Fig. 5. Results of XPS analysis of AlGaN surface. (a) Initial, (b) $\\mathrm{Cl}_2$ ALE, and (c) $\\mathrm{BCl}_3 / \\mathrm{Cl}_2$ ALE.","id":"train/atomic-layer-etching/experimental-usecase/30/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/30/fig_5","subset":"grouped-bar-chart","split":"train","classification":[{"panel_id":"a","label":"grouped bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The grouped bar chart shows XPS atom percent for the initial AlGaN surface, after Cl2 ALE, and after BCl3 and Cl2 ALE.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Ga (Atom %) | N (Atom %) | Al (Atom %) | O (Atom %) |\\n|---|---|---|---|---|\\n| (a) Initial | 50 | 45 | 5 | 3 |\\n| (b) Cl₂ | 35 | 42 | 5 | 18 |\\n| (c) BCl₃/Cl₂ | 48 | 42 | 5 | 5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ga has the highest atom percent in (a).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"O is very low in (a), increases strongly in (b) after Cl2 ALE, then decreases in (c) after BCl3 and Cl2 ALE to a level closer to the initial condition.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It suggests the surface remains GaN like or Ga rich and N rich at the top surface within the XPS sampling depth, rather than being dominated by an oxide or a thick overlayer of other species.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Cl2 process may leave a surface that is more prone to post process oxidation before XPS measurement.\\n\\nThe BCl3 and Cl2 process may produce a surface condition that results in less oxygen containing residue or less surface oxidation when exposed to air.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":543,"height":331}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/Atomic layer etching of GaN and AlGaN.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"grouped bar chart","caption_source":"content.json:image_caption"},"width":547,"height":334,"image_format":"jpeg","image_sha256":"f997f8aa84ad3c5556e000daeb99fb609168b3ad1234674c6eb490a7a463c5d7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_26_fig_8.jpg","caption":"FIG. 8. Dominant desorbed species during the desorption steps for different $\\mathrm{Ar^{+}}$ ion energies in the thin (a) and thick (b) Cl layer deposition cases. Reflected or desorbed Ar ions or atoms are not counted.","id":"train/atomic-layer-etching/simulation-usecase/26/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/26/fig_8","subset":"grouped-bar-chart","split":"train","classification":[{"panel_id":"a","label":"grouped bar chart"},{"panel_id":"b","label":"grouped bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the percentage of Si/Cl based desorbed species for thin Cl layer deposition at different electron energies (20 eV, 30 eV, 40 eV, 50 eV, 60 eV).\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the percentage of Si/Cl based desorbed species for thick Cl layer deposition at different electron energies (20 eV, 30 eV, 40 eV, 50 eV, 60 eV).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Desorbed Species | Cl | Si | SiCl | SiCl2 |\\n|---|---|---|---|---|\\n| 20 eV | 35% | 38% | 21% | 6% |\\n| 30 eV | 30% | 50% | 17% | 3% |\\n| 40 eV | 18% | 69% | 11% | 2% |\\n| 50 eV | 10% | 78% | 6% | 1% |\\n| 60 eV | 8% | 82% | 5% | 1% |\"},{\"panel_id\":\"b\",\"text\":\"| Desorbed Species | Cl | Si | SiCl | SiCl2 | Cl2 | SiCl3 | SiCl4 |\\n|---|---|---|---|---|---|---|---|\\n| 20 eV | 65% | 30% | 5% | 2% | 1% | 1% | 1% |\\n| 30 eV | 45% | 45% | 10% | 5% | 1% | 1% | 1% |\\n| 40 eV | 35% | 38% | 12% | 6% | 1% | 1% | 1% |\\n| 50 eV | 25% | 30% | 15% | 7% | 1% | 1% | 1% |\\n| 60 eV | 20% | 25% | 18% | 8% | 1% | 1% | 1% |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Cl\\n, 2. Si\\n, 3. SiCl\\n, 4. SiCl2\\n, 5. Cl2\\n, 6. SiCl3\\n, 7. SiCl4\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No Ar atom or ion emitted or reflected from the surface is counted because most of the incident Arþ ions are reflected once they hit the surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the case of thin Cl layer deposition, only a small percentage of Cl bonded Si species such as SiCl and SiCl2 desorbed from the surface. This is most likely due to the limited availability of Cl atoms on the surface under the thin Cl layer deposition conditions. The percentage of monoatomic Si atoms as desorbed species increases with the increasing Ar+ ion energy, which indicates that physical sputtering In case of Si by Ar+ ion impact dominates at higher ion incident energy. For thick Cl deposited films, tt is seen in (b), where more Cl atoms are available for surface reactions, that desorbed species with higher Cl content, including SiCl3 and SiCl4, are more visible.\"}]}]","bbox":[{"panel_id":"a","x":13,"y":15,"width":629,"height":470},{"panel_id":"b","x":699,"y":15,"width":640,"height":461}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/Surface damage formation during atomic layer etching of silicon with chlorine adsorption.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"grouped bar chart","caption_source":"content.json:img_caption"},"width":1339,"height":525,"image_format":"jpeg","image_sha256":"d217d6886735661e16f4ca46320e6b24c35934f9488f79ff32fb959593ca38ea","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_figure_10.jpg","caption":"Figure 10. Number distribution of etching products with regard to $\\theta_{\\mathrm{in}}$ . The error bars indicate the standard deviations among three independent runs.","id":"train/atomic-layer-etching/simulation-usecase/33/figure_10","sample_id":"atomic-layer-etching/simulation-usecase/33/figure_10","subset":"grouped-bar-chart","split":"train","classification":[{"panel_id":"a","label":"grouped bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The grouped bar chart displays the number of molecular products generated for a range of gas species—including SiFₓ (x = 1–4), N-based species (N, NH, NH₂, NH₃, N₂), and composite species (SiₓNᵧ)—as a function of incident angle from 0° to 75°. Fluorinated silicon products like SiF₃ and SiF₄ show higher formation at intermediate angles (15°–60°), while nitrogen-containing products like NH₃ and N₂ vary more moderately across the angle range. Notably, the counts for SiₓNᵧ products tend to decrease at higher angles. The variation in product distribution with angle suggests angular dependence in surface reaction dynamics, affecting both fluorination and nitridation pathways.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gas species | Si | SiF | SiF2 | SiF3 | SiF4 | N | NH | NH2 | NH3 | N2 | SixNy |\\n|---|---|---|---|---|---|---|---|---|---|---|---|\\n| 0° | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |\\n| 15° | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |\\n| 30° | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |\\n| 45° | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |\\n| 60° | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |\\n| 75° | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The number of molecules formed for each gas species varies with the angle of incidence, indicating that reaction dynamics are angle-dependent. For instance, the formation of fluorinated silicon species such as SiF₃ and SiF₄ increases notably at mid-range angles (e.g., 30°–60°), while their production is lower at steeper angles (75°) and normal incidence (0°). Similarly, the generation of nitrogen-containing species (NHₓ, N₂) appears more stable across angles, although NH₃ shows a slight decrease at high angles. Composite products like SiₓNᵧ also decline in number with increasing angle, suggesting reduced recombination at oblique incidences.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiF₄\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":875,"height":416}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"grouped bar chart","caption_source":"content.json:image_caption"},"width":875,"height":416,"image_format":"jpeg","image_sha256":"c3b87b092ecfc5031d0f66907fcb1dc87fdab5651641564b120c085c5390d8ba","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_figure_7.jpg","caption":"Figure 7. Number distribution of etching products with regard to $E_{\\mathrm{in}}$ . The error bars indicate the standard deviations among three independent runs.","id":"train/atomic-layer-etching/simulation-usecase/33/figure_7","sample_id":"atomic-layer-etching/simulation-usecase/33/figure_7","subset":"grouped-bar-chart","split":"train","classification":[{"panel_id":"a","label":"grouped bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This grouped bar chart illustrates how the formation of various gas-phase species evolves with increasing incident energy from 10 eV to 50 eV. Fluorinated silicon products (e.g., SiF₂, SiF₃, SiF₄) show a marked increase with energy, with SiF₄ becoming the dominant species at energies ≥30 eV. Nitrogen-containing species like NH₃ and N₂ also increase in abundance, particularly NH₃, which appears early at 10 eV and continues rising through 50 eV. Notably, the composite product SiₓNᵧ only emerges at 50 eV, indicating that higher energy input is necessary for the formation of complex bonded species. This energy-dependent profile provides insight into how plasma etching or energetic surface reactions can be tuned by controlling incident energy.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gas species | Si | SiF | SiF₂ | SiF₃ | SiF₄ | N | NH | NH₂ | NH₃ | N₂ | SiₓNy |\\n|---|---|---|---|---|---|---|---|---|---|---|---|\\n| 10 eV | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 15 | 5 | 0 |\\n| 20 eV | 0 | 0 | 0 | 0 | 5 | 0 | 0 | 0 | 30 | 10 | 0 |\\n| 30 eV | 0 | 0 | 5 | 5 | 35 | 0 | 0 | 0 | 40 | 20 | 0 |\\n| 40 eV | 0 | 0 | 10 | 5 | 40 | 0 | 0 | 0 | 45 | 25 | 0 |\\n| 50 eV | 0 | 2 | 25 | 5 | 40 | 0 | 0 | 0 | 45 | 30 | 15 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the incident energy increases from 10 eV to 50 eV, the number of fluorinated silicon species rises substantially, with SiF₄ becoming the most abundant at higher energies. Low-energy exposures (10–20 eV) yield primarily NH₃ and N₂, while fluorinated species like SiF₂ and SiF₃ only begin to appear around 30 eV. SiₓNᵧ species, indicative of more complex reaction products, are only observed at 50 eV, suggesting that higher energy is required to break and reform bonds involving both Si and N. This trend highlights a shift from simple desorption products to more reactive, fragmented, or recombined species as energy increases.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"NH₃.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":875,"height":414}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"grouped bar chart","caption_source":"content.json:image_caption"},"width":875,"height":414,"image_format":"jpeg","image_sha256":"fe5a0323ac9dad15d2da34f5b87a6e3cc4dde693e2f4aab7dd032a9cbc902200","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/heatmap/test/metadata.jsonl b/subsets/heatmap/test/metadata.jsonl index 7e0239217563def0640708e2a06bf6d4bec05c00..4bbbba59375e94a205706d43be2658ad32ff870d 100644 --- a/subsets/heatmap/test/metadata.jsonl +++ b/subsets/heatmap/test/metadata.jsonl @@ -1,15 +1,15 @@ -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_48_fig_6.jpg","caption":"FIG. 6. (Color online) AFM scans with a scan area of $500 \\times 500\\mathrm{nm}$ of the $\\sim 32\\mathrm{nm}$ $\\mathrm{HfO_2}$ films (300 ALD cycles) deposited at (a) $200^{\\circ}\\mathrm{C}$ , (b) $300^{\\circ}\\mathrm{C}$ , (c) $350^{\\circ}\\mathrm{C}$ , and (d) $400^{\\circ}\\mathrm{C}$ . An increase in amount of the crystallites can be detected from 200 to $400^{\\circ}\\mathrm{C}$ indicating enhanced crystallinity with increase in substrate stage temperature. Similar AFM scans of thicker $\\sim 80\\mathrm{nm}$ $\\mathrm{HfO_2}$ (750 ALD cycles) films deposited at (e) $250^{\\circ}\\mathrm{C}$ and (f) $400^{\\circ}\\mathrm{C}$ show higher roughness.","id":"test/atomic-layer-deposition/experimental-usecase/48/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/48/fig_6","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"},{"panel_id":"d","label":"heatmap"},{"panel_id":"e","label":"heatmap"},{"panel_id":"f","label":"heatmap"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/Sharma et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"48","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":983,"height":1036,"image_format":"jpeg","image_sha256":"2f278f698ab8b9d7d8fed512c6d6fb64576c6ac8a675cf6a75b35124d960a94f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":6,"width":486,"height":347},{"panel_id":"b","x":493,"y":1,"width":489,"height":349},{"panel_id":"c","x":3,"y":349,"width":491,"height":340},{"panel_id":"d","x":494,"y":347,"width":485,"height":340},{"panel_id":"e","x":1,"y":693,"width":491,"height":342},{"panel_id":"f","x":493,"y":690,"width":487,"height":346}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG8_b_c.jpg","caption":"FIG. 8. (a) $R_{\\mathrm{q}}$ of molybdenum films as a function of the number of ALE cycles at $300^{\\circ}\\mathrm{C}$ as measured by AFM. AFM images of (b) an unetched film with a thickness of around $55\\mathrm{nm}$ and (c) a film etched for 200 cycles, with a remaining thickness of $41.6\\mathrm{nm}$ .","id":"test/atomic-layer-etching/experimental-usecase/47/FIG8_b_c","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG8_b_c","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG8_b_c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG8_b_c.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":915,"height":390,"image_format":"jpeg","image_sha256":"ad64a2ad9b3555fb209bc7fd2c2d81c5b8676384800669f2d0032e514573c09c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":5,"width":381,"height":379},{"panel_id":"b","x":392,"y":3,"width":515,"height":377}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_fig_3.jpg","caption":"Fig. 3 - Film structure from the kMC simulations for Step A. The simulation begins with blue colors (unetched film). When the simulation progresses, a reaction site that is etched turns yellow. The left map shows the lattice at 0.111 s and the right one shows the lattice at 1.305 s. (For interpretation of the references to color in this figure legend, the reader is referred to the web version of this article.)","id":"test/atomic-layer-etching/simulation-usecase/11/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/11/fig_3","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1009,"height":481,"image_format":"jpeg","image_sha256":"a0ed1eda7153ca507563dca7f7026ea68e57fb749fbfce2013e73b3ab2b5ee55","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":14,"y":2,"width":464,"height":474},{"panel_id":"b","x":541,"y":3,"width":463,"height":470}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Lattice colormap at t=0.111 s during Step A kMC simulation, showing the early stage of fluorination. Blue pixels represent unreacted Al2O3 surface sites, yellow pixels represent fluorinated (AlF3) sites. The random mixture of colors indicates approximately 50% progression with spatially uniform reaction across the surface.\"},{\"panel_id\":\"b\",\"text\":\"Lattice colormap at t=1.305 s showing near-complete fluorination. The lattice is almost entirely yellow with only sparse blue dots remaining, indicating that Step A is approaching completion (close to the 1.38 s full fluorination time).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| x | y |\\n|---|---|\\n| 0 | 0 |\\n| 50 | 50 |\\n| 100 | 100 |\\n| 150 | 150 |\\n| 200 | 200 |\\n| 250 | 250 |\"},{\"panel_id\":\"b\",\"text\":\"| x | y |\\n|---|---|\\n| 0 | 0 |\\n| 50 | 50 |\\n| 100 | 100 |\\n| 150 | 150 |\\n| 200 | 200 |\\n| 250 | 250 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Blue represents unreacted Al2O3 surface sites, while yellow represents sites that have been fluorinated to form AlF3.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A 300×300 lattice was used, as shown by the axis scales ranging from 0 to approximately 300 in both x and y directions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The random spatial distribution reflects the self-limiting nature of ALE, where HF can adsorb at any available surface site with equal probability, leading to uniform coverage rather than island growth.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 0.111 s, the surface shows a random mixture of blue and yellow pixels, indicating partial fluorination with roughly half the sites reacted. By 1.305 s, the surface is almost completely yellow with only isolated blue pixels remaining, demonstrating that fluorination is nearly complete. The uniform spatial distribution of the reaction confirms that Step A proceeds homogeneously across the surface without preferential nucleation sites.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig_13.jpg","caption":"FIG. 13. 2D heat maps of $\\Delta G$ free energies of CVE1 and SL reactions and corresponding \"minimum thermodynamic barrier\" to etch given by CVE1-SL at different reactant HF pressures from 0.01 to 2.0 Torr at a constant product pressure of 0.01 Torr. The CVE1 and SL contour plots (left and middle) share the same color bar and $y$ axis.","id":"test/atomic-layer-etching/simulation-usecase/28/fig_13","sample_id":"atomic-layer-etching/simulation-usecase/28/fig_13","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_13.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":1417,"height":478,"image_format":"jpeg","image_sha256":"8f499e17bc685a5c0a174707a539152903b48138d4da5b5a5105c1bf15e1bf3d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":10,"width":454,"height":469},{"panel_id":"b","x":471,"y":8,"width":425,"height":466},{"panel_id":"c","x":902,"y":7,"width":510,"height":467}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"ΔG heatmap for CVE1 versus temperature and HF reactant pressure (0.01–2.0 Torr; product pressure fixed at 0.01 Torr). Most of the map sits in the negative-ΔG color range, consistent with CVE1 being thermodynamically favorable across broad conditions.\"},{\"panel_id\":\"b\",\"text\":\"ΔG heatmap for SL on the same axes and color scale as (a). The map is largely in positive-ΔG colors, with a low-temperature region trending toward negative ΔG, indicating SL becomes favorable only at sufficiently low T.\"},{\"panel_id\":\"c\",\"text\":\"Minimum thermodynamic barrier map defined as CVE1 − SL. Regions labeled “Etching” coincide with lower barrier colors, indicating conditions where CVE1 is thermodynamically preferred relative to SL.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The CVE1 map is largely in the negative-ΔG color range across the plotted HF pressure window, indicating broad thermodynamic favorability. As temperature decreases, the map trends toward less negative values in portions of the space, suggesting a reduced driving force. Overall, the figure supports CVE1 as favorable over much of the plotted T–P range rather than being confined to a narrow operating window.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A low thermodynamic barrier for etching.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At low temperatures.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig_14.jpg","caption":"FIG. 14. 2D heat maps of $\\Delta G$ free energies of CVE1 and SL reactions and corresponding \"minimum thermodynamic barrier\" to etch given by CVE1-SL with respect to change in HF pressure from 0.01 to 2.0 Torr for product pressures of 0.01, 0.2, 1, and 2 Torr. Plots in each row share the same color bar and y axis.","id":"test/atomic-layer-etching/simulation-usecase/28/fig_14","sample_id":"atomic-layer-etching/simulation-usecase/28/fig_14","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"},{"panel_id":"d","label":"heatmap"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_14.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":1428,"height":936,"image_format":"jpeg","image_sha256":"13bb9f8b64368e49b9a6e32a23053a06b166195e9a935dae19214015f05bf0a9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":6,"width":415,"height":924},{"panel_id":"b","x":441,"y":6,"width":277,"height":927},{"panel_id":"c","x":735,"y":4,"width":289,"height":929},{"panel_id":"d","x":1055,"y":4,"width":368,"height":927}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The CVE1 panels show ΔG as a function of temperature and reactant pressure for four product pressures (0.01–2 Torr). Across most of the plotted space, ΔG remains negative, indicating thermodynamically favorable CVE1 reactions. Favorability persists from low to high temperatures, with only limited sensitivity to reactant pressure, even as product pressure increases.\"},{\"panel_id\":\"b\",\"text\":\"The SL panels show ΔG landscapes that are predominantly positive over the same temperature and pressure ranges. SL becomes thermodynamically favorable only at low temperatures, with the favorable region shrinking as temperature increases. Increasing product pressure does not significantly expand the SL-favorable regime.\"},{\"panel_id\":\"c\",\"text\":\"The CVE1–SL panels map the minimum thermodynamic barrier for etching. Low-barrier regions occur primarily at lower temperatures and lower reactant pressures, indicating conditions where CVE1 is strongly preferred over SL. As product pressure increases from 0.01 to 2 Torr, these low-barrier regions progressively contract, showing that higher product pressures suppress the thermodynamic driving force for etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As product pressure increases, the region of low CVE1 − SL barrier becomes smaller across the temperature–pressure space. This indicates that higher product pressures thermodynamically disfavor etching by increasing the minimum free-energy separation between the CVE1 and SL pathways.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A low value of CVE1 − SL indicates that the CVE1 pathway is thermodynamically favored over SL, corresponding to a reduced minimum barrier for etching under those conditions.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"CVE1.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_914be4f0e9d4d0d3dfebb73a8c50064cefab93d602eebb6d6353417eb27afa8c.jpg","caption":"0.20 0.25 0.30 0.35 0.40 0.45 Etching Per Cycle (Å/cycle) (a)","id":"test/atomic-layer-etching/simulation-usecase/34/914be4f0e9d4d0d3dfebb73a8c50064cefab93d602eebb6d6353417eb27afa8c","sample_id":"atomic-layer-etching/simulation-usecase/34/914be4f0e9d4d0d3dfebb73a8c50064cefab93d602eebb6d6353417eb27afa8c","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/914be4f0e9d4d0d3dfebb73a8c50064cefab93d602eebb6d6353417eb27afa8c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/914be4f0e9d4d0d3dfebb73a8c50064cefab93d602eebb6d6353417eb27afa8c.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":486,"height":422,"image_format":"jpeg","image_sha256":"ca26b8e2fd86514415a062844ae117143baae657d0a37e1560e601cae0916d68","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":486,"height":422}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with TMA flow rate and substrate velocity. The colour gradient changes primarily along the substrate velocity axis, with higher values at higher velocities and lower values at lower velocities. In contrast, the dependence on TMA flow rate is relatively weak across the range shown.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TMA flow rate (sccm)| Substrate velocity (mm/s)| Relative value |\\n|---------------------|--------------------------|----------------|\\n| 20 | 100 | High |\\n| 60 | 100 | High |\\n| 100 | 100 | High |\\n| 20 | 60 | Medium |\\n| 60 | 60 | Medium |\\n| 100 | 60 | Medium |\\n| 20 | 20 | Low |\\n| 60 | 20 | Low |\\n| 100 | 20 | Low |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA flow rate and substrate velocity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The value decreases steadily as substrate velocity decreases. Higher velocities correspond to higher values (warmer colors), while lower velocities show lower values (cooler colors), indicating a strong dependence on substrate velocity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 80–100 mm/s.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_ac99266dacf1d4e2931e93ab68af6c1b11c0246b57fa839c8e6387242bd3ec29.jpg","caption":"0 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.050 Etching Per Cycle (Å/cycle) (a)","id":"test/atomic-layer-etching/simulation-usecase/34/ac99266dacf1d4e2931e93ab68af6c1b11c0246b57fa839c8e6387242bd3ec29","sample_id":"atomic-layer-etching/simulation-usecase/34/ac99266dacf1d4e2931e93ab68af6c1b11c0246b57fa839c8e6387242bd3ec29","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/ac99266dacf1d4e2931e93ab68af6c1b11c0246b57fa839c8e6387242bd3ec29.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/ac99266dacf1d4e2931e93ab68af6c1b11c0246b57fa839c8e6387242bd3ec29.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":486,"height":431,"image_format":"jpeg","image_sha256":"aa496fc2687f5c6adb1164b8af96fb6e66a4190a9104f1d5b221eb4c833db0c7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":486,"height":431}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with TMA flow rate and substrate velocity. The color distribution forms horizontal bands, indicating a strong dependence on substrate velocity. A higher-value band appears at intermediate velocities, while both low and high velocities show lower values, with relatively little variation across TMA flow rate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TMA flow rate (sccm)| Substrate velocity (mm/s)| Relative value |\\n|---------------------|--------------------------|----------------|\\n| 20 | 90 | Low |\\n| 60 | 90 | Low |\\n| 100 | 90 | Low |\\n| 20 | 60 | High |\\n| 60 | 60 | High |\\n| 100 | 60 | High |\\n| 20 | 30 | Low |\\n| 60 | 30 | Low |\\n| 100 | 30 | Low |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA flow rate and substrate velocity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The heatmap shows a clear banded pattern along the substrate velocity axis. Values are highest at intermediate velocities, while both lower and higher velocities correspond to lower values. This indicates that substrate velocity has a stronger influence on the mapped quantity than TMA flow rate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around the mid-range velocities, approximately 50–70 mm/s.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_c591785cc8731d91e2e3099dcdbb4c8894fab2f514bc5881d0060ecb78b0e9a1.jpg","caption":"(b)","id":"test/atomic-layer-etching/simulation-usecase/34/c591785cc8731d91e2e3099dcdbb4c8894fab2f514bc5881d0060ecb78b0e9a1","sample_id":"atomic-layer-etching/simulation-usecase/34/c591785cc8731d91e2e3099dcdbb4c8894fab2f514bc5881d0060ecb78b0e9a1","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/c591785cc8731d91e2e3099dcdbb4c8894fab2f514bc5881d0060ecb78b0e9a1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/c591785cc8731d91e2e3099dcdbb4c8894fab2f514bc5881d0060ecb78b0e9a1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":486,"height":433,"image_format":"jpeg","image_sha256":"981809dd235de14826775fb1be3a2d93426817aa3a816244fc40dd82c72e98e0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":486,"height":433}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with HF flow rate and substrate velocity. The highest values appear at low HF flow rates and high substrate velocities, forming a pronounced hot spot in the upper-left region. Values decrease toward higher HF flow rates and lower substrate velocities, indicating a strong dependence on both parameters.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF flow rate (sccm) | Substrate velocity (mm/s) | Relative value |\\n|--------------------|--------------------------|----------------|\\n| 20 | 90 | High |\\n| 30 | 90 | High |\\n| 40 | 90 | Medium |\\n| 20 | 60 | Medium |\\n| 50 | 60 | Medium |\\n| 80 | 60 | Low |\\n| 20 | 30 | Low |\\n| 60 | 30 | Low |\\n| 100 | 30 | Low |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF flow rate and substrate velocity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The value is highest at low HF flow rates combined with high substrate velocities. As HF flow rate increases or substrate velocity decreases, the value drops. Producing a clear gradient away from the upper-left region of the heatmap.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Low HF flow rate with high substrate velocity, Moderate HF flow rate with high substrate velocity.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_c96a5d146b2cea20f9cb7e1ccc44d625f87d3773c5b838f7e98fbe8484a40041.jpg","caption":"(b)","id":"test/atomic-layer-etching/simulation-usecase/34/c96a5d146b2cea20f9cb7e1ccc44d625f87d3773c5b838f7e98fbe8484a40041","sample_id":"atomic-layer-etching/simulation-usecase/34/c96a5d146b2cea20f9cb7e1ccc44d625f87d3773c5b838f7e98fbe8484a40041","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/c96a5d146b2cea20f9cb7e1ccc44d625f87d3773c5b838f7e98fbe8484a40041.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/c96a5d146b2cea20f9cb7e1ccc44d625f87d3773c5b838f7e98fbe8484a40041.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":486,"height":433,"image_format":"jpeg","image_sha256":"290d0eb2382b9bf3202cbb7f2ae784ba8d851f6cb1c0d861e919dd8f258ec3c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":486,"height":433}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with HF flow rate and substrate velocity. Values are highest at low substrate velocities and decrease steadily as substrate velocity increases. In contrast, changes across HF flow rate are relatively small, indicating that substrate velocity is the dominant parameter influencing the pattern.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF flow rate (sccm) | Substrate velocity (mm/s) | Relative value |\\n|--------------------|--------------------------|----------------|\\n| 20 | 30 | High |\\n| 60 | 30 | High |\\n| 100 | 30 | High |\\n| 20 | 60 | Medium |\\n| 60 | 60 | Medium |\\n| 100 | 60 | Medium |\\n| 20 | 90 | Low |\\n| 60 | 90 | Low |\\n| 100 | 90 | Low |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mapped value decreases as substrate velocity increases. Low velocities correspond to high values, while higher velocities show progressively lower values. Producing a strong vertical gradient across the plot.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF flow rate and substrate velocity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"At low substrate velocities, roughly 20–40 mm/s.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_dbf6d7327e6a2ccf2fdd7a2ca92f53c15d845586892393b10ca6af8bd9f89d0c.jpg","caption":"(b)","id":"test/atomic-layer-etching/simulation-usecase/34/dbf6d7327e6a2ccf2fdd7a2ca92f53c15d845586892393b10ca6af8bd9f89d0c","sample_id":"atomic-layer-etching/simulation-usecase/34/dbf6d7327e6a2ccf2fdd7a2ca92f53c15d845586892393b10ca6af8bd9f89d0c","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/dbf6d7327e6a2ccf2fdd7a2ca92f53c15d845586892393b10ca6af8bd9f89d0c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/dbf6d7327e6a2ccf2fdd7a2ca92f53c15d845586892393b10ca6af8bd9f89d0c.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":486,"height":433,"image_format":"jpeg","image_sha256":"5a59de09a595a6fc137275c30f475bf3ccf796427b48d626f1be62bcf5ea0af8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":486,"height":433}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with HF flow rate and substrate velocity. Most of the field remains at low values, indicated by dark blue colors. Only minor variations appear at intermediate substrate velocities, while changes across HF flow rate are weak.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF flow rate (sccm) | Substrate velocity (mm/s) | Relative value |\\n|--------------------|--------------------------|----------------|\\n| 20 | 90 | Low |\\n| 60 | 90 | Low |\\n| 100 | 90 | Low |\\n| 20 | 60 | Low |\\n| 60 | 60 | Medium |\\n| 100 | 60 | Low |\\n| 20 | 30 | Low |\\n| 60 | 30 | Low |\\n| 100 | 30 | Low |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF flow rate and substrate velocity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mapped value remains low across most substrate velocities. Slight increases appear at intermediate velocities. The overall variation with velocity is weak compared to other heatmaps in the paper.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Around intermediate velocities, approximately 50–70 mm/s.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_def461cf6c04a724419ce5334587e87c371ce72c124ef5a8a95568f9fcda168c.jpg","caption":"(a)","id":"test/atomic-layer-etching/simulation-usecase/34/def461cf6c04a724419ce5334587e87c371ce72c124ef5a8a95568f9fcda168c","sample_id":"atomic-layer-etching/simulation-usecase/34/def461cf6c04a724419ce5334587e87c371ce72c124ef5a8a95568f9fcda168c","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/def461cf6c04a724419ce5334587e87c371ce72c124ef5a8a95568f9fcda168c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/def461cf6c04a724419ce5334587e87c371ce72c124ef5a8a95568f9fcda168c.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":486,"height":433,"image_format":"jpeg","image_sha256":"53afab8fcfdef0c3532c0e16bf7806fc6755615e5dce8045ac9676159706cd80","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":486,"height":433}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with TMA flow rate and substrate velocity. Most of the field remains at low values across the parameter space. Only a slight increase appears at high substrate velocity and high TMA flow rate, indicating a weak dependence on both parameters.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TMA flow rate (sccm) | Substrate velocity (mm/s) | Relative value |\\n|---------------------|--------------------------|----------------|\\n| 20 | 90 | Low |\\n| 60 | 90 | Low |\\n| 100 | 90 | Medium |\\n| 20 | 60 | Low |\\n| 60 | 60 | Low |\\n| 100 | 60 | Low |\\n| 20 | 30 | Low |\\n| 60 | 30 | Low |\\n| 100 | 30 | Low |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mapped value stays low over most of the heatmap. Only a small increase is visible at high substrate velocities combined with high TMA flow rates. This suggests that neither parameter strongly affects the value within most of the explored range.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA flow rate and substrate velocity.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At high substrate velocity and high TMA flow rate.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_e099de4567b39ebac66fe519c6808b2a1c75e4240d4c9af1e27e018ab582608f.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/34/e099de4567b39ebac66fe519c6808b2a1c75e4240d4c9af1e27e018ab582608f","sample_id":"atomic-layer-etching/simulation-usecase/34/e099de4567b39ebac66fe519c6808b2a1c75e4240d4c9af1e27e018ab582608f","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/e099de4567b39ebac66fe519c6808b2a1c75e4240d4c9af1e27e018ab582608f.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/e099de4567b39ebac66fe519c6808b2a1c75e4240d4c9af1e27e018ab582608f.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"not_found"},"width":817,"height":100,"image_format":"jpeg","image_sha256":"10f9805e63a2366f763d0c2c328b008a2eed51fa10a4c95ae6587ce804768969","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":817,"height":100}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the color scale used to represent etching per cycle values in Å per cycle. It serves as a legend for the heatmaps, mapping color to numerical etch-rate values rather than displaying data directly.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Etching Per Cycle (Å/cycle) |\\n|---|\\n| 0 |\\n| 0.005 |\\n| 0.010 |\\n| 0.015 |\\n| 0.020 |\\n| 0.025 |\\n| 0.030 |\\n| 0.035 |\\n| 0.040 |\\n| 0.045 |\\n| 0.050 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The heatmap legend provides a visual reference for mapping spatial variations in the etch rate across a surface during atomic layer etching. Each color corresponds to a specific etch depth per cycle, enabling rapid identification of regions with higher or lower material removal. This can help in diagnosing etch uniformity, directional anisotropy, or localized enhancement due to plasma exposure, precursor reactivity, or surface morphology. By associating color with quantitative depth, researchers can analyze process effectiveness and refine conditions for improved uniformity and selectivity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ion flux distribution, precursor concentration gradients, surface topology, angle of incidence, local temperature\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.050 Å/cycle\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_10.jpg","caption":"Fig. 10. Artificial neural network model etching per cycle deviation from the multiscale CFD data in Fig. 7 represented by iso-contours of (a) HF flow rate of $20~\\mathrm{sccm}$ , (b) TMA flow rate of $40~\\mathrm{sccm}$ , and (c) substrate velocity of $80~\\mathrm{mm/s}$ . The MSE of the ANN model is $2.251 \\times 10^{-4}~\\text{\\AA}/\\text{cycle}$ . (c)","id":"test/atomic-layer-etching/simulation-usecase/34/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_10","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":486,"height":433,"image_format":"jpeg","image_sha256":"9f756c80a21cd2211ac8a9ab26caa643f622abcaf2f23cff00b80d393e3a7545","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":486,"height":433}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with HF flow rate and TMA flow rate. Most of the parameter space exhibits low values, with only a slight increase appearing at higher TMA flow rates. Variation across HF flow rate is minimal, indicating a weak dependence on this parameter.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF flow rate (sccm) | TMA flow rate (sccm) | Relative value |\\n|--------------------|---------------------|----------------|\\n| 20 | 90 | Low |\\n| 60 | 90 | Low |\\n| 100 | 90 | Medium |\\n| 20 | 60 | Low |\\n| 60 | 60 | Low |\\n| 100 | 60 | Low |\\n| 20 | 30 | Low |\\n| 60 | 30 | Low |\\n| 100 | 30 | Low |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF flow rate and TMA flow rate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At higher TMA flow rates.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mapped value remains low across most HF and TMA flow rate combinations. A modest increase is visible at higher TMA flow rates. While changes across HF flow rate are minimal.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_7.jpg","caption":"Fig. 7. Multiscale CFD simulation results of the etching per cycle represented by iso-contours of (a) HF flow rate of $20~\\mathrm{sccm}$ , (b) TMA flow rate of $40~\\mathrm{sccm}$ , and (c) substrate velocity of $80~\\mathrm{mm/s}$ . (c)","id":"test/atomic-layer-etching/simulation-usecase/34/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_7","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":483,"height":433,"image_format":"jpeg","image_sha256":"d3ba5be36485d2270904c7d4a2e98f28d27f19a02589b4e63698eb21a4c32202","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":483,"height":433}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with TMA flow rate and HF flow rate. Values increase strongly with increasing TMA flow rate, while variation across HF flow rate is relatively small. This indicates that TMA flow rate is the dominant parameter influencing the pattern.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF flow rate (sccm) | TMA flow rate (sccm) | Relative value |\\n|--------------------|---------------------|----------------|\\n| 20 | 20 | Low |\\n| 60 | 20 | Low |\\n| 100 | 20 | Low |\\n| 20 | 60 | Medium |\\n| 60 | 60 | Medium |\\n| 100 | 60 | Medium |\\n| 20 | 90 | High |\\n| 60 | 90 | High |\\n| 100 | 90 | High |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mapped value increases steadily as TMA flow rate increases. Low TMA flow rates correspond to lower values. Higher TMA flow rates produce consistently higher values across the HF flow range.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA flow rate and HF flow rate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At high TMA flow rates, approximately 80–100 sccm.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_8.jpg","caption":"Fig. 8. Linear regression model etching per cycle deviation from the multiscale CFD data in Fig. 7 represented by iso-contours of (a) HF flow rate of $20~\\mathrm{sccm}$ , (b) TMA flow rate of $40~\\mathrm{sccm}$ , and (c) substrate velocity of $80~\\mathrm{mm/s}$ . The MSE of the linear regression model is $4.236 \\times 10^{-4} \\, \\text{\\AA}/\\text{cycle}$ . (c)","id":"test/atomic-layer-etching/simulation-usecase/34/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_8","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":483,"height":433,"image_format":"jpeg","image_sha256":"7fad847c71d97ce91b82607e659e0026177d2e4aa27e51df5f1cbc7b646a2be5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":483,"height":433}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with TMA flow rate and HF flow rate. A pronounced high-value region appears at low HF flow rates and low TMA flow rates. Outside this region, values remain low across most of the parameter space, indicating a localized dependence on both parameters.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF flow rate (sccm) | TMA flow rate (sccm) | Relative value |\\n|--------------------|---------------------|----------------|\\n| 20 | 20 | Low |\\n| 60 | 20 | Low |\\n| 100 | 20 | Low |\\n| 20 | 60 | Medium |\\n| 60 | 60 | Medium |\\n| 100 | 60 | Medium |\\n| 20 | 90 | High |\\n| 60 | 90 | High |\\n| 100 | 90 | High |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mapped value is highest at low HF and low TMA flow rates, forming a localized high-value region. As either flow rate increases, the value drops sharply and remains low across most of the remaining parameter space.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA flow rate and HF flow rate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Low HF flow rate, Low TMA flow rate\"}]}]"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_48_fig_6.jpg","caption":"FIG. 6. (Color online) AFM scans with a scan area of $500 \\times 500\\mathrm{nm}$ of the $\\sim 32\\mathrm{nm}$ $\\mathrm{HfO_2}$ films (300 ALD cycles) deposited at (a) $200^{\\circ}\\mathrm{C}$ , (b) $300^{\\circ}\\mathrm{C}$ , (c) $350^{\\circ}\\mathrm{C}$ , and (d) $400^{\\circ}\\mathrm{C}$ . An increase in amount of the crystallites can be detected from 200 to $400^{\\circ}\\mathrm{C}$ indicating enhanced crystallinity with increase in substrate stage temperature. Similar AFM scans of thicker $\\sim 80\\mathrm{nm}$ $\\mathrm{HfO_2}$ (750 ALD cycles) films deposited at (e) $250^{\\circ}\\mathrm{C}$ and (f) $400^{\\circ}\\mathrm{C}$ show higher roughness.","id":"test/atomic-layer-deposition/experimental-usecase/48/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/48/fig_6","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"},{"panel_id":"d","label":"heatmap"},{"panel_id":"e","label":"heatmap"},{"panel_id":"f","label":"heatmap"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":6,"width":486,"height":347},{"panel_id":"b","x":493,"y":1,"width":489,"height":349},{"panel_id":"c","x":3,"y":349,"width":491,"height":340},{"panel_id":"d","x":494,"y":347,"width":485,"height":340},{"panel_id":"e","x":1,"y":693,"width":491,"height":342},{"panel_id":"f","x":493,"y":690,"width":487,"height":346}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/Sharma et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"48","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":983,"height":1036,"image_format":"jpeg","image_sha256":"2f278f698ab8b9d7d8fed512c6d6fb64576c6ac8a675cf6a75b35124d960a94f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG8_b_c.jpg","caption":"FIG. 8. (a) $R_{\\mathrm{q}}$ of molybdenum films as a function of the number of ALE cycles at $300^{\\circ}\\mathrm{C}$ as measured by AFM. AFM images of (b) an unetched film with a thickness of around $55\\mathrm{nm}$ and (c) a film etched for 200 cycles, with a remaining thickness of $41.6\\mathrm{nm}$ .","id":"test/atomic-layer-etching/experimental-usecase/47/FIG8_b_c","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG8_b_c","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":5,"width":381,"height":379},{"panel_id":"b","x":392,"y":3,"width":515,"height":377}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG8_b_c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG8_b_c.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":915,"height":390,"image_format":"jpeg","image_sha256":"ad64a2ad9b3555fb209bc7fd2c2d81c5b8676384800669f2d0032e514573c09c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_fig_3.jpg","caption":"Fig. 3 - Film structure from the kMC simulations for Step A. The simulation begins with blue colors (unetched film). When the simulation progresses, a reaction site that is etched turns yellow. The left map shows the lattice at 0.111 s and the right one shows the lattice at 1.305 s. (For interpretation of the references to color in this figure legend, the reader is referred to the web version of this article.)","id":"test/atomic-layer-etching/simulation-usecase/11/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/11/fig_3","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Lattice colormap at t=0.111 s during Step A kMC simulation, showing the early stage of fluorination. Blue pixels represent unreacted Al2O3 surface sites, yellow pixels represent fluorinated (AlF3) sites. The random mixture of colors indicates approximately 50% progression with spatially uniform reaction across the surface.\"},{\"panel_id\":\"b\",\"text\":\"Lattice colormap at t=1.305 s showing near-complete fluorination. The lattice is almost entirely yellow with only sparse blue dots remaining, indicating that Step A is approaching completion (close to the 1.38 s full fluorination time).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| x | y |\\n|---|---|\\n| 0 | 0 |\\n| 50 | 50 |\\n| 100 | 100 |\\n| 150 | 150 |\\n| 200 | 200 |\\n| 250 | 250 |\"},{\"panel_id\":\"b\",\"text\":\"| x | y |\\n|---|---|\\n| 0 | 0 |\\n| 50 | 50 |\\n| 100 | 100 |\\n| 150 | 150 |\\n| 200 | 200 |\\n| 250 | 250 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Blue represents unreacted Al2O3 surface sites, while yellow represents sites that have been fluorinated to form AlF3.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A 300×300 lattice was used, as shown by the axis scales ranging from 0 to approximately 300 in both x and y directions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The random spatial distribution reflects the self-limiting nature of ALE, where HF can adsorb at any available surface site with equal probability, leading to uniform coverage rather than island growth.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 0.111 s, the surface shows a random mixture of blue and yellow pixels, indicating partial fluorination with roughly half the sites reacted. By 1.305 s, the surface is almost completely yellow with only isolated blue pixels remaining, demonstrating that fluorination is nearly complete. The uniform spatial distribution of the reaction confirms that Step A proceeds homogeneously across the surface without preferential nucleation sites.\"}]}]","bbox":[{"panel_id":"a","x":14,"y":2,"width":464,"height":474},{"panel_id":"b","x":541,"y":3,"width":463,"height":470}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1009,"height":481,"image_format":"jpeg","image_sha256":"a0ed1eda7153ca507563dca7f7026ea68e57fb749fbfce2013e73b3ab2b5ee55","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig_13.jpg","caption":"FIG. 13. 2D heat maps of $\\Delta G$ free energies of CVE1 and SL reactions and corresponding \"minimum thermodynamic barrier\" to etch given by CVE1-SL at different reactant HF pressures from 0.01 to 2.0 Torr at a constant product pressure of 0.01 Torr. The CVE1 and SL contour plots (left and middle) share the same color bar and $y$ axis.","id":"test/atomic-layer-etching/simulation-usecase/28/fig_13","sample_id":"atomic-layer-etching/simulation-usecase/28/fig_13","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"ΔG heatmap for CVE1 versus temperature and HF reactant pressure (0.01–2.0 Torr; product pressure fixed at 0.01 Torr). Most of the map sits in the negative-ΔG color range, consistent with CVE1 being thermodynamically favorable across broad conditions.\"},{\"panel_id\":\"b\",\"text\":\"ΔG heatmap for SL on the same axes and color scale as (a). The map is largely in positive-ΔG colors, with a low-temperature region trending toward negative ΔG, indicating SL becomes favorable only at sufficiently low T.\"},{\"panel_id\":\"c\",\"text\":\"Minimum thermodynamic barrier map defined as CVE1 − SL. Regions labeled “Etching” coincide with lower barrier colors, indicating conditions where CVE1 is thermodynamically preferred relative to SL.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The CVE1 map is largely in the negative-ΔG color range across the plotted HF pressure window, indicating broad thermodynamic favorability. As temperature decreases, the map trends toward less negative values in portions of the space, suggesting a reduced driving force. Overall, the figure supports CVE1 as favorable over much of the plotted T–P range rather than being confined to a narrow operating window.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A low thermodynamic barrier for etching.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At low temperatures.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":10,"width":454,"height":469},{"panel_id":"b","x":471,"y":8,"width":425,"height":466},{"panel_id":"c","x":902,"y":7,"width":510,"height":467}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_13.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":1417,"height":478,"image_format":"jpeg","image_sha256":"8f499e17bc685a5c0a174707a539152903b48138d4da5b5a5105c1bf15e1bf3d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig_14.jpg","caption":"FIG. 14. 2D heat maps of $\\Delta G$ free energies of CVE1 and SL reactions and corresponding \"minimum thermodynamic barrier\" to etch given by CVE1-SL with respect to change in HF pressure from 0.01 to 2.0 Torr for product pressures of 0.01, 0.2, 1, and 2 Torr. Plots in each row share the same color bar and y axis.","id":"test/atomic-layer-etching/simulation-usecase/28/fig_14","sample_id":"atomic-layer-etching/simulation-usecase/28/fig_14","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"},{"panel_id":"d","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The CVE1 panels show ΔG as a function of temperature and reactant pressure for four product pressures (0.01–2 Torr). Across most of the plotted space, ΔG remains negative, indicating thermodynamically favorable CVE1 reactions. Favorability persists from low to high temperatures, with only limited sensitivity to reactant pressure, even as product pressure increases.\"},{\"panel_id\":\"b\",\"text\":\"The SL panels show ΔG landscapes that are predominantly positive over the same temperature and pressure ranges. SL becomes thermodynamically favorable only at low temperatures, with the favorable region shrinking as temperature increases. Increasing product pressure does not significantly expand the SL-favorable regime.\"},{\"panel_id\":\"c\",\"text\":\"The CVE1–SL panels map the minimum thermodynamic barrier for etching. Low-barrier regions occur primarily at lower temperatures and lower reactant pressures, indicating conditions where CVE1 is strongly preferred over SL. As product pressure increases from 0.01 to 2 Torr, these low-barrier regions progressively contract, showing that higher product pressures suppress the thermodynamic driving force for etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As product pressure increases, the region of low CVE1 − SL barrier becomes smaller across the temperature–pressure space. This indicates that higher product pressures thermodynamically disfavor etching by increasing the minimum free-energy separation between the CVE1 and SL pathways.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A low value of CVE1 − SL indicates that the CVE1 pathway is thermodynamically favored over SL, corresponding to a reduced minimum barrier for etching under those conditions.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"CVE1.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":6,"width":415,"height":924},{"panel_id":"b","x":441,"y":6,"width":277,"height":927},{"panel_id":"c","x":735,"y":4,"width":289,"height":929},{"panel_id":"d","x":1055,"y":4,"width":368,"height":927}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_14.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":1428,"height":936,"image_format":"jpeg","image_sha256":"13bb9f8b64368e49b9a6e32a23053a06b166195e9a935dae19214015f05bf0a9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_914be4f0e9d4d0d3dfebb73a8c50064cefab93d602eebb6d6353417eb27afa8c.jpg","caption":"0.20 0.25 0.30 0.35 0.40 0.45 Etching Per Cycle (Å/cycle) (a)","id":"test/atomic-layer-etching/simulation-usecase/34/914be4f0e9d4d0d3dfebb73a8c50064cefab93d602eebb6d6353417eb27afa8c","sample_id":"atomic-layer-etching/simulation-usecase/34/914be4f0e9d4d0d3dfebb73a8c50064cefab93d602eebb6d6353417eb27afa8c","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with TMA flow rate and substrate velocity. The colour gradient changes primarily along the substrate velocity axis, with higher values at higher velocities and lower values at lower velocities. In contrast, the dependence on TMA flow rate is relatively weak across the range shown.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TMA flow rate (sccm)| Substrate velocity (mm/s)| Relative value |\\n|---------------------|--------------------------|----------------|\\n| 20 | 100 | High |\\n| 60 | 100 | High |\\n| 100 | 100 | High |\\n| 20 | 60 | Medium |\\n| 60 | 60 | Medium |\\n| 100 | 60 | Medium |\\n| 20 | 20 | Low |\\n| 60 | 20 | Low |\\n| 100 | 20 | Low |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA flow rate and substrate velocity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The value decreases steadily as substrate velocity decreases. Higher velocities correspond to higher values (warmer colors), while lower velocities show lower values (cooler colors), indicating a strong dependence on substrate velocity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 80–100 mm/s.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":486,"height":422}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/914be4f0e9d4d0d3dfebb73a8c50064cefab93d602eebb6d6353417eb27afa8c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/914be4f0e9d4d0d3dfebb73a8c50064cefab93d602eebb6d6353417eb27afa8c.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":486,"height":422,"image_format":"jpeg","image_sha256":"ca26b8e2fd86514415a062844ae117143baae657d0a37e1560e601cae0916d68","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_ac99266dacf1d4e2931e93ab68af6c1b11c0246b57fa839c8e6387242bd3ec29.jpg","caption":"0 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.050 Etching Per Cycle (Å/cycle) (a)","id":"test/atomic-layer-etching/simulation-usecase/34/ac99266dacf1d4e2931e93ab68af6c1b11c0246b57fa839c8e6387242bd3ec29","sample_id":"atomic-layer-etching/simulation-usecase/34/ac99266dacf1d4e2931e93ab68af6c1b11c0246b57fa839c8e6387242bd3ec29","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with TMA flow rate and substrate velocity. The color distribution forms horizontal bands, indicating a strong dependence on substrate velocity. A higher-value band appears at intermediate velocities, while both low and high velocities show lower values, with relatively little variation across TMA flow rate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TMA flow rate (sccm)| Substrate velocity (mm/s)| Relative value |\\n|---------------------|--------------------------|----------------|\\n| 20 | 90 | Low |\\n| 60 | 90 | Low |\\n| 100 | 90 | Low |\\n| 20 | 60 | High |\\n| 60 | 60 | High |\\n| 100 | 60 | High |\\n| 20 | 30 | Low |\\n| 60 | 30 | Low |\\n| 100 | 30 | Low |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA flow rate and substrate velocity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The heatmap shows a clear banded pattern along the substrate velocity axis. Values are highest at intermediate velocities, while both lower and higher velocities correspond to lower values. This indicates that substrate velocity has a stronger influence on the mapped quantity than TMA flow rate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around the mid-range velocities, approximately 50–70 mm/s.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":486,"height":431}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/ac99266dacf1d4e2931e93ab68af6c1b11c0246b57fa839c8e6387242bd3ec29.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/ac99266dacf1d4e2931e93ab68af6c1b11c0246b57fa839c8e6387242bd3ec29.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":486,"height":431,"image_format":"jpeg","image_sha256":"aa496fc2687f5c6adb1164b8af96fb6e66a4190a9104f1d5b221eb4c833db0c7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_c591785cc8731d91e2e3099dcdbb4c8894fab2f514bc5881d0060ecb78b0e9a1.jpg","caption":"(b)","id":"test/atomic-layer-etching/simulation-usecase/34/c591785cc8731d91e2e3099dcdbb4c8894fab2f514bc5881d0060ecb78b0e9a1","sample_id":"atomic-layer-etching/simulation-usecase/34/c591785cc8731d91e2e3099dcdbb4c8894fab2f514bc5881d0060ecb78b0e9a1","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with HF flow rate and substrate velocity. The highest values appear at low HF flow rates and high substrate velocities, forming a pronounced hot spot in the upper-left region. Values decrease toward higher HF flow rates and lower substrate velocities, indicating a strong dependence on both parameters.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF flow rate (sccm) | Substrate velocity (mm/s) | Relative value |\\n|--------------------|--------------------------|----------------|\\n| 20 | 90 | High |\\n| 30 | 90 | High |\\n| 40 | 90 | Medium |\\n| 20 | 60 | Medium |\\n| 50 | 60 | Medium |\\n| 80 | 60 | Low |\\n| 20 | 30 | Low |\\n| 60 | 30 | Low |\\n| 100 | 30 | Low |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF flow rate and substrate velocity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The value is highest at low HF flow rates combined with high substrate velocities. As HF flow rate increases or substrate velocity decreases, the value drops. Producing a clear gradient away from the upper-left region of the heatmap.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Low HF flow rate with high substrate velocity, Moderate HF flow rate with high substrate velocity.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":486,"height":433}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/c591785cc8731d91e2e3099dcdbb4c8894fab2f514bc5881d0060ecb78b0e9a1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/c591785cc8731d91e2e3099dcdbb4c8894fab2f514bc5881d0060ecb78b0e9a1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":486,"height":433,"image_format":"jpeg","image_sha256":"981809dd235de14826775fb1be3a2d93426817aa3a816244fc40dd82c72e98e0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_c96a5d146b2cea20f9cb7e1ccc44d625f87d3773c5b838f7e98fbe8484a40041.jpg","caption":"(b)","id":"test/atomic-layer-etching/simulation-usecase/34/c96a5d146b2cea20f9cb7e1ccc44d625f87d3773c5b838f7e98fbe8484a40041","sample_id":"atomic-layer-etching/simulation-usecase/34/c96a5d146b2cea20f9cb7e1ccc44d625f87d3773c5b838f7e98fbe8484a40041","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with HF flow rate and substrate velocity. Values are highest at low substrate velocities and decrease steadily as substrate velocity increases. In contrast, changes across HF flow rate are relatively small, indicating that substrate velocity is the dominant parameter influencing the pattern.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF flow rate (sccm) | Substrate velocity (mm/s) | Relative value |\\n|--------------------|--------------------------|----------------|\\n| 20 | 30 | High |\\n| 60 | 30 | High |\\n| 100 | 30 | High |\\n| 20 | 60 | Medium |\\n| 60 | 60 | Medium |\\n| 100 | 60 | Medium |\\n| 20 | 90 | Low |\\n| 60 | 90 | Low |\\n| 100 | 90 | Low |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mapped value decreases as substrate velocity increases. Low velocities correspond to high values, while higher velocities show progressively lower values. Producing a strong vertical gradient across the plot.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF flow rate and substrate velocity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"At low substrate velocities, roughly 20–40 mm/s.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":486,"height":433}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/c96a5d146b2cea20f9cb7e1ccc44d625f87d3773c5b838f7e98fbe8484a40041.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/c96a5d146b2cea20f9cb7e1ccc44d625f87d3773c5b838f7e98fbe8484a40041.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":486,"height":433,"image_format":"jpeg","image_sha256":"290d0eb2382b9bf3202cbb7f2ae784ba8d851f6cb1c0d861e919dd8f258ec3c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_dbf6d7327e6a2ccf2fdd7a2ca92f53c15d845586892393b10ca6af8bd9f89d0c.jpg","caption":"(b)","id":"test/atomic-layer-etching/simulation-usecase/34/dbf6d7327e6a2ccf2fdd7a2ca92f53c15d845586892393b10ca6af8bd9f89d0c","sample_id":"atomic-layer-etching/simulation-usecase/34/dbf6d7327e6a2ccf2fdd7a2ca92f53c15d845586892393b10ca6af8bd9f89d0c","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with HF flow rate and substrate velocity. Most of the field remains at low values, indicated by dark blue colors. Only minor variations appear at intermediate substrate velocities, while changes across HF flow rate are weak.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF flow rate (sccm) | Substrate velocity (mm/s) | Relative value |\\n|--------------------|--------------------------|----------------|\\n| 20 | 90 | Low |\\n| 60 | 90 | Low |\\n| 100 | 90 | Low |\\n| 20 | 60 | Low |\\n| 60 | 60 | Medium |\\n| 100 | 60 | Low |\\n| 20 | 30 | Low |\\n| 60 | 30 | Low |\\n| 100 | 30 | Low |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF flow rate and substrate velocity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mapped value remains low across most substrate velocities. Slight increases appear at intermediate velocities. The overall variation with velocity is weak compared to other heatmaps in the paper.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Around intermediate velocities, approximately 50–70 mm/s.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":486,"height":433}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/dbf6d7327e6a2ccf2fdd7a2ca92f53c15d845586892393b10ca6af8bd9f89d0c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/dbf6d7327e6a2ccf2fdd7a2ca92f53c15d845586892393b10ca6af8bd9f89d0c.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":486,"height":433,"image_format":"jpeg","image_sha256":"5a59de09a595a6fc137275c30f475bf3ccf796427b48d626f1be62bcf5ea0af8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_def461cf6c04a724419ce5334587e87c371ce72c124ef5a8a95568f9fcda168c.jpg","caption":"(a)","id":"test/atomic-layer-etching/simulation-usecase/34/def461cf6c04a724419ce5334587e87c371ce72c124ef5a8a95568f9fcda168c","sample_id":"atomic-layer-etching/simulation-usecase/34/def461cf6c04a724419ce5334587e87c371ce72c124ef5a8a95568f9fcda168c","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with TMA flow rate and substrate velocity. Most of the field remains at low values across the parameter space. Only a slight increase appears at high substrate velocity and high TMA flow rate, indicating a weak dependence on both parameters.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TMA flow rate (sccm) | Substrate velocity (mm/s) | Relative value |\\n|---------------------|--------------------------|----------------|\\n| 20 | 90 | Low |\\n| 60 | 90 | Low |\\n| 100 | 90 | Medium |\\n| 20 | 60 | Low |\\n| 60 | 60 | Low |\\n| 100 | 60 | Low |\\n| 20 | 30 | Low |\\n| 60 | 30 | Low |\\n| 100 | 30 | Low |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mapped value stays low over most of the heatmap. Only a small increase is visible at high substrate velocities combined with high TMA flow rates. This suggests that neither parameter strongly affects the value within most of the explored range.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA flow rate and substrate velocity.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At high substrate velocity and high TMA flow rate.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":486,"height":433}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/def461cf6c04a724419ce5334587e87c371ce72c124ef5a8a95568f9fcda168c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/def461cf6c04a724419ce5334587e87c371ce72c124ef5a8a95568f9fcda168c.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":486,"height":433,"image_format":"jpeg","image_sha256":"53afab8fcfdef0c3532c0e16bf7806fc6755615e5dce8045ac9676159706cd80","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_e099de4567b39ebac66fe519c6808b2a1c75e4240d4c9af1e27e018ab582608f.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/34/e099de4567b39ebac66fe519c6808b2a1c75e4240d4c9af1e27e018ab582608f","sample_id":"atomic-layer-etching/simulation-usecase/34/e099de4567b39ebac66fe519c6808b2a1c75e4240d4c9af1e27e018ab582608f","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the color scale used to represent etching per cycle values in Å per cycle. It serves as a legend for the heatmaps, mapping color to numerical etch-rate values rather than displaying data directly.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Etching Per Cycle (Å/cycle) |\\n|---|\\n| 0 |\\n| 0.005 |\\n| 0.010 |\\n| 0.015 |\\n| 0.020 |\\n| 0.025 |\\n| 0.030 |\\n| 0.035 |\\n| 0.040 |\\n| 0.045 |\\n| 0.050 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The heatmap legend provides a visual reference for mapping spatial variations in the etch rate across a surface during atomic layer etching. Each color corresponds to a specific etch depth per cycle, enabling rapid identification of regions with higher or lower material removal. This can help in diagnosing etch uniformity, directional anisotropy, or localized enhancement due to plasma exposure, precursor reactivity, or surface morphology. By associating color with quantitative depth, researchers can analyze process effectiveness and refine conditions for improved uniformity and selectivity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ion flux distribution, precursor concentration gradients, surface topology, angle of incidence, local temperature\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.050 Å/cycle\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":817,"height":100}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/e099de4567b39ebac66fe519c6808b2a1c75e4240d4c9af1e27e018ab582608f.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/e099de4567b39ebac66fe519c6808b2a1c75e4240d4c9af1e27e018ab582608f.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"not_found"},"width":817,"height":100,"image_format":"jpeg","image_sha256":"10f9805e63a2366f763d0c2c328b008a2eed51fa10a4c95ae6587ce804768969","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_10.jpg","caption":"Fig. 10. Artificial neural network model etching per cycle deviation from the multiscale CFD data in Fig. 7 represented by iso-contours of (a) HF flow rate of $20~\\mathrm{sccm}$ , (b) TMA flow rate of $40~\\mathrm{sccm}$ , and (c) substrate velocity of $80~\\mathrm{mm/s}$ . The MSE of the ANN model is $2.251 \\times 10^{-4}~\\text{\\AA}/\\text{cycle}$ . (c)","id":"test/atomic-layer-etching/simulation-usecase/34/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_10","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with HF flow rate and TMA flow rate. Most of the parameter space exhibits low values, with only a slight increase appearing at higher TMA flow rates. Variation across HF flow rate is minimal, indicating a weak dependence on this parameter.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF flow rate (sccm) | TMA flow rate (sccm) | Relative value |\\n|--------------------|---------------------|----------------|\\n| 20 | 90 | Low |\\n| 60 | 90 | Low |\\n| 100 | 90 | Medium |\\n| 20 | 60 | Low |\\n| 60 | 60 | Low |\\n| 100 | 60 | Low |\\n| 20 | 30 | Low |\\n| 60 | 30 | Low |\\n| 100 | 30 | Low |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF flow rate and TMA flow rate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At higher TMA flow rates.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mapped value remains low across most HF and TMA flow rate combinations. A modest increase is visible at higher TMA flow rates. While changes across HF flow rate are minimal.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":486,"height":433}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":486,"height":433,"image_format":"jpeg","image_sha256":"9f756c80a21cd2211ac8a9ab26caa643f622abcaf2f23cff00b80d393e3a7545","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_7.jpg","caption":"Fig. 7. Multiscale CFD simulation results of the etching per cycle represented by iso-contours of (a) HF flow rate of $20~\\mathrm{sccm}$ , (b) TMA flow rate of $40~\\mathrm{sccm}$ , and (c) substrate velocity of $80~\\mathrm{mm/s}$ . (c)","id":"test/atomic-layer-etching/simulation-usecase/34/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_7","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with TMA flow rate and HF flow rate. Values increase strongly with increasing TMA flow rate, while variation across HF flow rate is relatively small. This indicates that TMA flow rate is the dominant parameter influencing the pattern.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF flow rate (sccm) | TMA flow rate (sccm) | Relative value |\\n|--------------------|---------------------|----------------|\\n| 20 | 20 | Low |\\n| 60 | 20 | Low |\\n| 100 | 20 | Low |\\n| 20 | 60 | Medium |\\n| 60 | 60 | Medium |\\n| 100 | 60 | Medium |\\n| 20 | 90 | High |\\n| 60 | 90 | High |\\n| 100 | 90 | High |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mapped value increases steadily as TMA flow rate increases. Low TMA flow rates correspond to lower values. Higher TMA flow rates produce consistently higher values across the HF flow range.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA flow rate and HF flow rate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At high TMA flow rates, approximately 80–100 sccm.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":483,"height":433}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":483,"height":433,"image_format":"jpeg","image_sha256":"d3ba5be36485d2270904c7d4a2e98f28d27f19a02589b4e63698eb21a4c32202","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_8.jpg","caption":"Fig. 8. Linear regression model etching per cycle deviation from the multiscale CFD data in Fig. 7 represented by iso-contours of (a) HF flow rate of $20~\\mathrm{sccm}$ , (b) TMA flow rate of $40~\\mathrm{sccm}$ , and (c) substrate velocity of $80~\\mathrm{mm/s}$ . The MSE of the linear regression model is $4.236 \\times 10^{-4} \\, \\text{\\AA}/\\text{cycle}$ . (c)","id":"test/atomic-layer-etching/simulation-usecase/34/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_8","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with TMA flow rate and HF flow rate. A pronounced high-value region appears at low HF flow rates and low TMA flow rates. Outside this region, values remain low across most of the parameter space, indicating a localized dependence on both parameters.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF flow rate (sccm) | TMA flow rate (sccm) | Relative value |\\n|--------------------|---------------------|----------------|\\n| 20 | 20 | Low |\\n| 60 | 20 | Low |\\n| 100 | 20 | Low |\\n| 20 | 60 | Medium |\\n| 60 | 60 | Medium |\\n| 100 | 60 | Medium |\\n| 20 | 90 | High |\\n| 60 | 90 | High |\\n| 100 | 90 | High |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mapped value is highest at low HF and low TMA flow rates, forming a localized high-value region. As either flow rate increases, the value drops sharply and remains low across most of the remaining parameter space.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA flow rate and HF flow rate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Low HF flow rate, Low TMA flow rate\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":483,"height":433}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":483,"height":433,"image_format":"jpeg","image_sha256":"7fad847c71d97ce91b82607e659e0026177d2e4aa27e51df5f1cbc7b646a2be5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/heatmap/train/metadata.jsonl b/subsets/heatmap/train/metadata.jsonl index b8e62d6faae4472693d566ceec792622fd708adc..cd40f0b1712f1ad00f41e12b2ff998aae0ae7000 100644 --- a/subsets/heatmap/train/metadata.jsonl +++ b/subsets/heatmap/train/metadata.jsonl @@ -1,28 +1,28 @@ -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_60_figure_4.jpg","caption":"Figure 4. AFM images of $\\mathrm{Y}_2\\mathrm{O}_3$ films for $\\mathrm{Y}(\\mathrm{EtCp})_2(\\mathrm{iPr - amd})$ with (a) $\\mathrm{H}_2\\mathrm{O}$ , (b) $\\mathrm{O}_2$ plasma, and (c) $\\mathrm{H}_2\\mathrm{O}$ plasma and (d) the corresponding XRR patterns.","id":"train/atomic-layer-deposition/experimental-usecase/60/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/60/figure_4","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"},{"panel_id":"deposition","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/Zhao et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"60","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":931,"height":742,"image_format":"jpeg","image_sha256":"75e55cc0cbcb8486437c7581ad3de99b4a95ca28f2c2d7a9d4b9e958404f7399","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":2,"width":458,"height":354},{"panel_id":"b","x":467,"y":1,"width":461,"height":356},{"panel_id":"c","x":3,"y":360,"width":466,"height":370},{"panel_id":"d","x":463,"y":362,"width":429,"height":377}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig5.jpg","caption":"FIG.5. Evolution of surface coverage as a function of time during a $0.3\\mathrm{s}$ dose and 1s purge. The simulations assume a precursor pressure at the inlet of $\\rho_{0} = 75\\mathrm{mTorr}$ , and a reaction probability for the self-limited process $\\beta_{10} = 10^{-2}$ .","id":"train/atomic-layer-deposition/simulation-usecase/11/fig5","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig5","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":703,"height":1275,"image_format":"jpeg","image_sha256":"3c1de79f08b76a8642597e5a71024bd8aac5f59a939c9c208d0e1f7c49f8bddd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":693,"height":1271}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_11.jpg","caption":"FIG. 11. Evolution of coverage as a function of time for a self-saturating process where $f = 0.1$ and $\\beta_{1b} = 10^{-4}$ . While the fast component reaches saturation after $0.5 \\mathrm{~s}$ , the remaining a $10\\%$ of the sites require an order of magnitude higher dose times, resulting in a homogeneous yet unsaturated profile. A fully saturated wafer from an ideal self-limited process is shown as comparison.","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_11","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_11","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":675,"height":1056,"image_format":"jpeg","image_sha256":"ca39ffd3aebefe01c6863c06be41d9dc665a52e8d385e1c0e55c458c92ae3566","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":24,"y":8,"width":309,"height":364},{"panel_id":"b","x":365,"y":10,"width":310,"height":362},{"panel_id":"c","x":24,"y":397,"width":309,"height":308},{"panel_id":"d","x":365,"y":404,"width":310,"height":308},{"panel_id":"e","x":24,"y":745,"width":309,"height":311},{"panel_id":"f","x":385,"y":743,"width":268,"height":305}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_14.jpg","caption":"FIG. 14. By-product coverage at saturation on $300\\mathrm{mm}$ wafers for two different values of by-product reactivity: (a) $\\beta_{bp} = 10^{-4}$ and (b) $\\beta_{bp} = 10^{-3}$ . The precursor reactivity is $\\beta_{10} = 10^{-2}$ .","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_14","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_14","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":672,"height":900,"image_format":"jpeg","image_sha256":"89a4c796b3a2500b15d9b521be104c9ce42a9363b6e10c528121f737650959fc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":11,"y":488,"width":658,"height":410},{"panel_id":"a","x":7,"y":5,"width":660,"height":461}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_2.jpg","caption":"FIG. 2. Velocity profiles for our two simulation domains: (a) tube cross-flow geometry and (b) $300\\mathrm{mm}$ wafer reactor.","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_2","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"contour heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":669,"height":594,"image_format":"jpeg","image_sha256":"a8745fe41075f00812ecd8d9bbab7f644c2ccf25ef9ae3738c50211a12cd7e6e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":202,"width":667,"height":387},{"panel_id":"a","x":5,"y":2,"width":662,"height":199}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_6.jpg","caption":"FIG. 6. Surface coverage for increasing dose times of 0.1, 0.2, and $0.4 \\text{s}$ . The simulations assume a precursor pressure at the inlet of $\\beta_{0} = 75 \\text{mTorr}$ , and a reaction probability for the self-limited process is $\\beta_{10} = 10^{-2}$ (left) and $\\beta_{10} = 10^{-3}$ (right).","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_6","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"},{"panel_id":"d","label":"heatmap"},{"panel_id":"e","label":"heatmap"},{"panel_id":"f","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":672,"height":1055,"image_format":"jpeg","image_sha256":"a19ebb315662273a2c35a7bbef90ea0435f314982f7716a7f993044667d2d05b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":64,"width":314,"height":314},{"panel_id":"b","x":355,"y":64,"width":317,"height":314},{"panel_id":"c","x":9,"y":410,"width":314,"height":314},{"panel_id":"d","x":355,"y":410,"width":317,"height":313},{"panel_id":"e","x":14,"y":747,"width":304,"height":308},{"panel_id":"f","x":355,"y":742,"width":317,"height":313}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig_11.jpg","caption":"FIG. 11. (Color online) Pulse-averaged scalar concentrations $(c / c_0)$ on the sample. The injection directions are presented by the triangle in the figure.","id":"train/atomic-layer-deposition/simulation-usecase/31/fig_11","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig_11","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"},{"panel_id":"d","label":"heatmap"},{"panel_id":"e","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":664,"height":1316,"image_format":"jpeg","image_sha256":"459855ff73879c953feb558fc749b0fd35ea7313f6c7743654c81ae832116d27","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":659,"height":339},{"panel_id":"b","x":0,"y":347,"width":668,"height":246},{"panel_id":"c","x":1,"y":600,"width":663,"height":230},{"panel_id":"d","x":1,"y":840,"width":659,"height":235},{"panel_id":"e","x":1,"y":1073,"width":657,"height":239}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a series of heatmaps for Reynolds number (Re) 40, with varying color gradients indicating intensity.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows a series of heatmaps for Reynolds number (Re) 80, with varying color gradients indicating intensity.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows a series of heatmaps for Reynolds number (Re) 200, with varying color gradients indicating intensity.\"},{\"panel_id\":\"d\",\"text\":\"The figure shows a series of heatmaps for Reynolds number (Re) 800, with varying color gradients indicating intensity.\"},{\"panel_id\":\"e\",\"text\":\"The figure shows a series of heatmaps for Reynolds number (Re) 2400, with varying color gradients indicating intensity.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Re=40 | Re=80 | Re=200 | Re=800 | Re=2400 |\\n|---|---|---|---|---|\\n| ![](https://example.com/image1.png) | ![](https://example.com/image2.png) | ![](https://example.com/image3.png) | ![](https://example.com/image4.png) | ![](https://example.com/image5.png) |\"},{\"panel_id\":\"b\",\"text\":\"| Re=40 | Re=80 | Re=200 | Re=800 | Re=2400 |\\n|---|---|---|---|---|\\n| ![](https://example.com/image6.png) | ![](https://example.com/image7.png) | ![](https://example.com/image8.png) | ![](https://example.com/image9.png) | ![](https://example.com/image10.png) |\"},{\"panel_id\":\"c\",\"text\":\"| Re=40 | Re=80 | Re=200 | Re=800 | Re=2400 |\\n|---|---|---|---|---|\\n| ![](https://example.com/image11.png) | ![](https://example.com/image12.png) | ![](https://example.com/image13.png) | ![](https://example.com/image14.png) | ![](https://example.com/image15.png) |\"},{\"panel_id\":\"d\",\"text\":\"| Re=40 | Re=80 | Re=200 | Re=800 | Re=2400 |\\n|---|---|---|---|---|\\n| ![](https://example.com/image16.png) | ![](https://example.com/image17.png) | ![](https://example.com/image18.png) | ![](https://example.com/image19.png) | ![](https://example.com/image20.png) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The flow seems continuous or laminar, as the lines are relatively parallel and the transitions smooth.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the case of CVD it is important that every part of the substrate is exposed to the same amount of flow. This also means that low Reynolds numbers work better.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems as if there is turbulant flow, as the boundaries are not parallel and show lots of twists.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, it is unlikely as the gas density is higher in one part of the sample. However, still saturation can be reached everywhere, but takes a bit longer.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig_12.jpg","caption":"FIG. 12. (Color online) Simulated $\\lambda$ correlation for all Reynolds numbers and the measured surface thickness in the perpendicular injection configuration. The small dots in the thickness maps indicate the locations of the measurement probes while the triangles indicate the directions of the precursor sources with respect to the sample. The lower triangle indicates the TMA injection and the right triangle the injection of water. FIG. 13. (Color online) Simulated $\\lambda$ correlation and the measured surface thickness after 50 and 600 cycles in the opposing injection configuration. (a) The pulse-averaged scalar concentration for constant flow rate during the pulse (left) and $50\\%$ increased flow rate (right). (b) Streamlines on the midsection of the inlet lines during the pulse. The arrow indicates the line with increased flow rate.","id":"train/atomic-layer-deposition/simulation-usecase/31/fig_12","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig_12","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"},{"panel_id":"d","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1220,"height":1392,"image_format":"jpeg","image_sha256":"d394e05ceeccabb2f025720418a0ea80809bbb262db2fe279cf5d72521aa36ab","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":490,"height":967},{"panel_id":"b","x":715,"y":8,"width":500,"height":947},{"panel_id":"c","x":5,"y":981,"width":508,"height":407},{"panel_id":"d","x":612,"y":966,"width":606,"height":423}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Heatmaps displaying λ correlation at various Reynolds numbers (Re) ranging from 40 to 2400, for injection directions tilted 90 degrees.\"},{\"panel_id\":\"b\",\"text\":\"Heatmaps displaying λ correlation at various Reynolds numbers (Re) ranging from 40 to 2400, for opposite injection directions.\"},{\"panel_id\":\"c\",\"text\":\"Heatmaps displaying thickness, after 10 and 600 cycles, for injection directions tilted 90 degrees.\"},{\"panel_id\":\"d\",\"text\":\"Heatmaps comparing measured thickness at 10 and 600 cycles, for opposite injection directions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Re=40 | Re=80 | Re=200 | Re=800 | Re=2400 |\\n|---|---|---|---|---|\\n| ![](https://example.com/image1.png) | ![](https://example.com/image2.png) | ![](https://example.com/image3.png) | ![](https://example.com/image4.png) | ![](https://example.com/image5.png) |\"},{\"panel_id\":\"b\",\"text\":\"| Re=40 | Re=80 | Re=200 | Re=800 | Re=2400 |\\n|---|---|---|---|---|\\n| ![](https://example.com/image6.png) | ![](https://example.com/image7.png) | ![](https://example.com/image8.png) | ![](https://example.com/image9.png) | ![](https://example.com/image10.png) |\"},{\"panel_id\":\"c\",\"text\":\"| Measured 10 cycles | Measured 600 cycles |\\n|---|---|\\n| ![](https://example.com/image11.png) | ![](https://example.com/image12.png) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Re = 80\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"800.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the non-uniformity is not constant, for 10 and for 600 cycles the high spots are at completely different locations.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the deposition is more dependent on the flow coming from the black arrow, as there a thicker layer is measured.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig_14.jpg","caption":"FIG. 14. (Color Online) Effect of increased flow rate during the pulse at $\\mathrm{Re} = 40$","id":"train/atomic-layer-deposition/simulation-usecase/31/fig_14","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig_14","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":653,"height":861,"image_format":"jpeg","image_sha256":"7ad973c015c167d47f3ec348e7d0d9b7a374af3e4eb8fb75a8ffdac7c840f031","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":5,"width":655,"height":418},{"panel_id":"b","x":57,"y":441,"width":506,"height":422}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap displays a gradient color scale ranging from 0.00 to 0.10, with contour lines indicating varying intensities, due to flows from the right side.\"},{\"panel_id\":\"b\",\"text\":\"The heatmap illustrates the flow inside a scientific setup with a central point and surrounding curved lines, representing flow patterns.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Left |Right |\\n|---|---|\\n| 0.00-0.10 |0.10|\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The right image shows a better distribution over the full wafer, eventhough there is more turbulance.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There should not be, if dosed long enough the thickness should be equal everywhere.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The most prominent turbulance features are visible close to the instreames of the gases.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig_5.jpg","caption":"FIG. 5. (Color online) Instantaneous velocity fields on the midsection of the inlet pipes.","id":"train/atomic-layer-deposition/simulation-usecase/31/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig_5","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"},{"panel_id":"d","label":"heatmap"},{"panel_id":"e","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":680,"height":1064,"image_format":"jpeg","image_sha256":"cd80e8c75fa4cd5df93e809754c66e1bd82ccc593202ea4e1533d3c21dd7dcd3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":11,"width":327,"height":347},{"panel_id":"b","x":333,"y":9,"width":347,"height":349},{"panel_id":"c","x":10,"y":359,"width":332,"height":346},{"panel_id":"d","x":342,"y":359,"width":343,"height":343},{"panel_id":"e","x":180,"y":705,"width":334,"height":358}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap displays the instantaneous velocity fields in the reactor for a flow with Reynolds number (Re) of 40. There is only laminar flow.\"},{\"panel_id\":\"b\",\"text\":\"The heatmap displays the instantaneous velocity fields in the reactor for a flow with Reynolds number (Re) of 80. There is only laminar flow.\"},{\"panel_id\":\"c\",\"text\":\"The heatmap displays the instantaneous velocity fields in the reactor for a flow with Reynolds number (Re) of 200. There are some features visible in the middle related to turbulant flows.\"},{\"panel_id\":\"d\",\"text\":\"The heatmap displays the instantaneous velocity fields in the reactor for a flow with Reynolds number (Re) of 800. There are features visible in the middle related to turbulant flows.\"},{\"panel_id\":\"e\",\"text\":\"The heatmap displays the instantaneous velocity fields in the reactor for a flow with Reynolds number (Re) of 2400. There are features visible related to turbulant flows, already from the inlet.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes this is bad for the reactor as it can lead to backflow of chemicals into the lines.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that the flow is bounced back from the grid support, but as it can not go back into the stream it will divert into the middle.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No this does not necessarily have to be the case. As long as the exposure time is long enough to also fully cover the less dense areas.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, only laminar flow.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig_7.jpg","caption":"FIG. 7. (Color online) Streamlines of the average velocity field at the midsection of the inlet pipes. The planes are colored by the mean velocity magnitude $U / U_{\\mathrm{in}}$","id":"train/atomic-layer-deposition/simulation-usecase/31/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig_7","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":678,"height":397,"image_format":"jpeg","image_sha256":"22d6f7467287bc0a35a584c40c9bbadaa299782ea43cff444527e4ce801c97c6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":0,"width":340,"height":397},{"panel_id":"b","x":344,"y":2,"width":333,"height":397}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig_8.jpg","caption":"FIG. 8. (Color online) Time-averaged velocity fields $U / U_{\\mathrm{in}}$ just below the grid part of the reactor for $\\mathrm{Re} = 40$ , 800 and 2400 from left to right, respectively. (a) The time averaged value of parallel to the grid velocity component isocontour at $\\bar{u} = U_{\\mathrm{in}} / 36$ for $\\mathrm{Re} = 80$ (left) and $\\mathrm{Re} = 800$ (right). (b) Turbulence intensity $I = u_{\\mathrm{rms}}^{\\prime} / U_{\\mathrm{in}}$ in percentages for $\\mathrm{Re} = 80$ (left) and $\\mathrm{Re} = 800$ (right) slightly above the plane where the sample lies. Note the two different color scales.","id":"train/atomic-layer-deposition/simulation-usecase/31/fig_8","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig_8","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":675,"height":484,"image_format":"jpeg","image_sha256":"3eb5b6f326161adee2a52c6a17618109cde1a94de3a46bdac87bd1146f7a2a7e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":672,"height":477}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig_9.jpg","caption":"FIG. 9. (Color online) Illustrations of the grid passage modes and increase of turbulence intensity at higher Reynolds number. Fig. 10. Spatial average of a precursor on the sample as a function of time during a half-cycle. The averages are presented in four equal sized sector sectors (Q1-Q4) for all Reynolds numbers. The gray region indicates the time of the pulse and the arrow the injection direction.","id":"train/atomic-layer-deposition/simulation-usecase/31/fig_9","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig_9","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1406,"height":750,"image_format":"jpeg","image_sha256":"b6fe6225d7dd8ac1d4be3c773354ff435410245ec2ff4cdd31fc17b5ee845dc7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":5,"width":708,"height":744},{"panel_id":"b","x":714,"y":5,"width":687,"height":744}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates two modes of fluid dynamics: diffusive mode and dynamic mode. It includes a conceptual diagram of the primary and secondary jets, and heatmaps representing concentration distributions.\"},{\"panel_id\":\"b\",\"text\":\"The line charts depict the temporal evolution of normalized concentration (c/c0) at different Reynolds numbers (Re) for four quadrants (Q1, Q2, Q3, Q4).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"|Reynolds number | Graph look|\\n|---|---|\\n|40|Smooth distribution over time|\\n|80|Smooth distribution over time|\\n|200| Smooth distribution over time|\\n|800|Non-smooth distribution over time|\\n|2400|Non-smooth distribution over time|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Diffusive mode\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"red\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The lines show peaks and dips instead of a smooth graph, indicating there is turbulance.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Q3 is seperated from the influx of species by the grid support, resulting in less direct flow. The flow in Q3 is diffused there.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_11.jpg","caption":"Fig. 11 - Snapshots of TMA concentration profiles on the substrate surface, scales in $\\mathrm{mol} / \\mathrm{m}^3$ : a) $20\\mathrm{ms}$ , b) $30\\mathrm{ms}$ , c) $60\\mathrm{ms}$ , d) $80\\mathrm{ms}$ , e) $100\\mathrm{ms}$ , f) $200\\mathrm{ms}$ , after the start of the TMA pulse.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_11","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_11","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"},{"panel_id":"d","label":"heatmap"},{"panel_id":"e","label":"heatmap"},{"panel_id":"f","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1189,"height":1205,"image_format":"jpeg","image_sha256":"3583516b50ea6d06ddf0dfc06a9b61786a416f9f4b7e91f356234d9e92c67e4e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":7,"width":505,"height":332},{"panel_id":"b","x":670,"y":7,"width":511,"height":338},{"panel_id":"c","x":10,"y":415,"width":487,"height":351},{"panel_id":"d","x":696,"y":410,"width":485,"height":356},{"panel_id":"e","x":10,"y":830,"width":485,"height":345},{"panel_id":"f","x":668,"y":836,"width":516,"height":338}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image gives TMA concentration profiles on the substrate surface, scales in mol/m3 after the start of the TMA pulse for 20 ms\"},{\"panel_id\":\"b\",\"text\":\"The image gives TMA concentration profiles on the substrate surface, scales in mol/m3 after the start of the TMA pulse for 30 ms\"},{\"panel_id\":\"c\",\"text\":\"The image gives TMA concentration profiles on the substrate surface, scales in mol/m3 after the start of the TMA pulse for 60 ms\"},{\"panel_id\":\"d\",\"text\":\"The image gives TMA concentration profiles on the substrate surface, scales in mol/m3 after the start of the TMA pulse for 80 ms\"},{\"panel_id\":\"e\",\"text\":\"The image gives TMA concentration profiles on the substrate surface, scales in mol/m3 after the start of the TMA pulse for 100 ms\"},{\"panel_id\":\"f\",\"text\":\"The image gives TMA concentration profiles on the substrate surface, scales in mol/m3 after the start of the TMA pulse for 200 ms\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Value |\\n| --- |\\n| 0.0001 |\\n| 0.0002 |\\n| 0.0003 |\\n| 0.0004 |\\n| 0.0005 |\\n| 0.0006 |\\n| 0.0007 |\"},{\"panel_id\":\"b\",\"text\":\"| Value |\\n| --- |\\n| 0.0003 |\\n| 0.0004 |\\n| 0.0005 |\\n| 0.0006 |\\n| 0.0007 |\\n| 0.0008 |\\n| 0.0009 |\"},{\"panel_id\":\"c\",\"text\":\"| Value |\\n| --- |\\n| 500E-6 |\\n| 460E-6 |\\n| 480E-6 |\\n| 500E-6 |\\n| 520E-6 |\\n| 540E-6 |\\n| 560E-6 |\\n| 580E-6 |\"},{\"panel_id\":\"d\",\"text\":\"| Value |\\n| --- |\\n| 440E-6 |\\n| 460E-6 |\\n| 480E-6 |\\n| 500E-6 |\\n| 520E-6 |\\n| 540E-6 |\\n| 560E-6 |\\n| 580E-6 |\"},{\"panel_id\":\"e\",\"text\":\"| Value |\\n| --- |\\n| 380E-6 |\\n| 400E-6 |\\n| 420E-6 |\\n| 440E-6 |\\n| 460E-6 |\\n| 480E-6 |\\n| 500E-6 |\\n| 520E-6 |\\n| 540E-6 |\\n| 560E-6 |\\n| 580E-6 |\"},{\"panel_id\":\"f\",\"text\":\"| Value |\\n| --- |\\n| 200E-6 |\\n| 220E-6 |\\n| 240E-6 |\\n| 260E-6 |\\n| 280E-6 |\\n| 300E-6 |\\n| 320E-6 |\\n| 340E-6 |\\n| 360E-6 |\\n| 380E-6 |\\n| 400E-6 |\\n| 420E-6 |\\n| 440E-6 |\\n| 460E-6 |\\n| 480E-6 |\\n| 500E-6 |\\n| 520E-6 |\\n| 540E-6 |\\n| 560E-6 |\\n| 580E-6 |\"}]","vqa":"[{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The loading door Ar flow purges the side of the substrate exposed to it. The loading door side of the substrate is exposed to a lower TMA concentration during the whole TMA exposure step after 60 ms from the start of the TMA pulse. The concentrations remain in the same order of magnitude as in c. The maximum concentration difference is 15.3% for d and 15.6% for e.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Notably, 20 ms after the start of the TMA pulse, the maximum concentration computed on the substrate exceeds 7 × 10−4mol/m3,while the minimum value is seven times smaller, i.e 1 × 10−4mol/m3, leading to a concentration difference of 93%. The maximum and minimum values are 9 × 10−4and 3 × 10−4mol/m3 respectively,after 30 ms.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_12.jpg","caption":"Fig. 12 - Integral over time of the TMA flux on the substrate surface, scale in $\\mathrm{mol} / \\mathrm{m}^2$ , during the whole TMA exposure.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_12","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_12","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":856,"height":639,"image_format":"jpeg","image_sha256":"ca638fec0c8b993a13260b7db3c55a6318d4cf3144f2d94bf33b23d70cd9959a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":5,"width":846,"height":633}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The visualization shows a heatmap of TMA flux on the substrate surface, scale in mol/m2, during the whole TMA exposure integrated over time, with a color gradient indicating varying values, ranging from blue (lowest value) to red (highest value). The color bar on the right provides the scale.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Value |\\n|---|\\n| 0.0118 |\\n| 0.0120 |\\n| 0.0122 |\\n| 0.0124 |\\n| 0.0126 |\\n| 0.0128 |\\n| 0.0130 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In order to analyze the exposure of the substrate to TMA molecules, the species flux on the substrate surface, using the Hertz-Knudsen equation, in terms of mol/m2s is calculated. These species flux is integrated over the whole TMA exposure and purging time of the ALD cycle. The resulting exposure of the substrate to TMA molecules is plotted in the image\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TMA flux integral has a maximum between the substrate center and the loading door side. This corresponds to the concentration profiles on the substrate during the TMA pulse, when the re-circulation in the gas phase exists. This means that the majority of the substrate exposure to TMA occurs during the first ms of the TMA pulse.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The computed maximum exposure difference on the substrate surface during the TMA exposure is 10.7%.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_14.jpg","caption":"Fig. 14 - Snapshots of the $\\mathbb{H}_2\\mathbb{O}$ concentration profile on the substrate surface, scales in $\\mathrm{mol} / \\mathrm{m}^3$ : a) $20\\mathrm{ms}$ , b) $30\\mathrm{ms}$ , c) $60\\mathrm{ms}$ , d) $100\\mathrm{ms}$ , e) $120\\mathrm{ms}$ , f) $200\\mathrm{ms}$ after the start of the $\\mathrm{H}_2\\mathrm{O}$ pulse.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_14","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_14","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"},{"panel_id":"d","label":"heatmap"},{"panel_id":"e","label":"heatmap"},{"panel_id":"f","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1184,"height":1380,"image_format":"jpeg","image_sha256":"57bb12625dc93a2c45b43335baabaf035552550c1541a86a3f1063beaa929413","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":11,"y":15,"width":466,"height":382},{"panel_id":"b","x":682,"y":14,"width":485,"height":384},{"panel_id":"c","x":11,"y":494,"width":485,"height":377},{"panel_id":"d","x":693,"y":476,"width":483,"height":383},{"panel_id":"e","x":11,"y":951,"width":485,"height":387},{"panel_id":"f","x":693,"y":952,"width":483,"height":379}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap images display the H2O concentration profile on the substrate surface, scales in mol/m3 for various duration after the start of the H2O pulse.\"},{\"panel_id\":\"b\",\"text\":\"The heatmap images display the H2O concentration profile on the substrate surface, scales in mol/m3 for various duration after the start of the H2O pulse.\"},{\"panel_id\":\"c\",\"text\":\"The heatmap images display the H2O concentration profile on the substrate surface, scales in mol/m3 for various duration after the start of the H2O pulse.\"},{\"panel_id\":\"d\",\"text\":\"The heatmap images display the H2O concentration profile on the substrate surface, scales in mol/m3 for various duration after the start of the H2O pulse.\"},{\"panel_id\":\"e\",\"text\":\"The heatmap images display the H2O concentration profile on the substrate surface, scales in mol/m3 for various duration after the start of the H2O pulse.\"},{\"panel_id\":\"f\",\"text\":\"The heatmap images display the H2O concentration profile on the substrate surface, scales in mol/m3 for various duration after the start of the H2O pulse.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Value |\\n| --- |\\n| 0.00032 |\\n| 0.00034 |\\n| 0.00036 |\\n| 0.00038 |\\n| 0.0004 |\\n| 0.00042 |\\n| 0.00044 |\\n| 0.00046 |\"},{\"panel_id\":\"b\",\"text\":\"| Value |\\n| --- |\\n| 0.0005000 |\\n| 0.0005200 |\\n| 0.0005400 |\\n| 0.0005600 |\\n| 0.0005800 |\\n| 0.0006000 |\\n| 0.0006200 |\\n| 0.0006400 |\\n| 0.0006600 |\\n| 0.0006800 |\"},{\"panel_id\":\"c\",\"text\":\"| Value |\\n| --- |\\n| 0.0007000 |\\n| 0.0007200 |\\n| 0.0007400 |\\n| 0.0007600 |\\n| 0.0007800 |\\n| 0.0008000 |\\n| 0.0008200 |\"},{\"panel_id\":\"d\",\"text\":\"| Value |\\n| --- |\\n| 0.0006300 |\\n| 0.0006400 |\\n| 0.0006500 |\\n| 0.0006600 |\\n| 0.0006700 |\\n| 0.0006800 |\"},{\"panel_id\":\"e\",\"text\":\"| Value |\\n| --- |\\n| 0.0005700 |\\n| 0.0005800 |\\n| 0.0005900 |\\n| 0.0005950 |\"},{\"panel_id\":\"f\",\"text\":\"| Value |\\n| --- |\\n| 0.0003650 |\\n| 0.0003700 |\\n| 0.0003750 |\\n| 0.0003800 |\\n| 0.0003850 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Snapshot a lead to a maximum concentration difference of 35.5%\\n2. Snapshot b, The maximum concentration difference is 26.6% \\n3. Snapshot c, the difference is 17.65% \\n4. Snapshot d it is 8.7%\\n5. Snapshot e, the maximum concentration difference is 4.5%\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the first ms of the H2O pulse, the high flow rate coming from the side inlet of the reactor suppresses the loading door purging flow, thus leading to a concentration profile with a maximum at the substrate center\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"From the predictions in the images, it can be concluded that during the first ms of the H2O pulse, the values of the H2O concentrations on the substrate surface are of the same order of magnitude,unlike the TMA pulse, where it took 30 ms for an almost full substrate surface exposure to TMA. It is also noted that the overall H2O concentrations are higher than in the TMA case\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the flow rate from the side inlet decreases, the loading door purge influences the species distribution, thus leading to a constantly lower H2O concentration on the loading door side of the substrate, which is exposed to the purging gas. This gradual effect is shown in b–e.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_15.jpg","caption":"Fig. 15 - Integral over time of the $\\mathbf{H}_2\\mathbf{O}$ flux on the substrate surface, during the whole $\\mathbf{H}_2\\mathbf{O}$ exposure and purge, scale in $\\mathrm{mol} / \\mathrm{m}^2$ .","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_15","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_15","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":844,"height":642,"image_format":"jpeg","image_sha256":"79fc28d8304fe8641389300e3393745aea429f6b50ea0e1263d813642956a9c3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":833,"height":632}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This specific heatmap displays the integral over time of the H2O flux on the substrate surface, during the whole H2O exposure and purge, scale in mol/m2.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Value |\\n|---|\\n| 0.038 |\\n| 0.0385 |\\n| 0.039 |\\n| 0.0395 |\\n| 0.04 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"By integrating the concentration profiles obtained after every duration, over the whole duration of the H2O exposure and purge, the total exposure is determined and shown in the figure.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The computed time integral of the species flux shows anon-uniform exposure of the substrate surface to H2O. A lower exposure is observed on the loading door side of the substrate, while a maximum is calculated on the opposite side\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The maximum total exposure difference is 6.7%. This value is lower than the corresponding value for the TMA exposure\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If the H2O exposure is not high enough to saturate the surface, a non-uniform film will be deposited\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_6.jpg","caption":"Fig. 6 - a) Temperature field inside the reactor chamber, b) temperature profile on the substrate surface for the substrate center at $300^{\\circ}$ C.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_6","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1008,"height":481,"image_format":"jpeg","image_sha256":"5533a841d6aeebaa109b60324d8f37ab237781965394f399d8dc1895835eac20","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":418,"height":440},{"panel_id":"b","x":485,"y":1,"width":521,"height":447}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Temperature field inside the reactor chamber\"},{\"panel_id\":\"b\",\"text\":\"temperature profile on the substrate surface for the substratecenter at 300◦C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Object | Temperature Range (°C) |\\n|-----------|--------------------------|\\n| Reactor | 50 – 300 |\"},{\"panel_id\":\"b\",\"text\":\"| Object | Temperature Range (°C) |\\n|-----------|--------------------------|\\n| Substrate| 280 – 300 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Ar flow entering the reactor chamber at 20◦C lowers the temperature in the area close to the loading door and at the nearby substrate side(at 279◦C). The temperature difference between the substrate center and the loading door side reads 21◦C.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The gas is quite isothermal into the reactor with a temperature close to that of the walls (270◦C), except near the inlet zones where it is colder and near the substrate where it is hotter (300◦C)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The substrate is not isothermal for image b, due to the cooling provided by the gas coming from the vicinity of the reactor walls. The calculated temperature on the substrate perimeter is equal to 289◦C.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_10.jpg","caption":"Figure 10. Contours of the mole fraction of nitrogen on the plate rotating clockwise in R2, R3 and R4 with a gap distance of $5\\mathrm{mm}$ in the angular velocities of $0.8$ and $1.0\\mathrm{rad / s}$ . The legend for the contours is present in Figure 9. A ring in orange denotes a nitrogen invasion into the BDEAS reaction zone, and a ring in green denotes the BDEAS runoff from the reaction zone.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_10","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":536,"height":350,"image_format":"jpeg","image_sha256":"76d7b64a325c6f16250dc596620a2402fbf0ce0b3d6baa3bb7f2a7d9cd216cf3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":6,"width":232,"height":344},{"panel_id":"b","x":240,"y":5,"width":155,"height":344},{"panel_id":"c","x":395,"y":9,"width":140,"height":341}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Nitrogen mole fraction contour map for reactor R1 on a rotating wafer at angular velocities of 0.8 and 1.0 rad/s with a 5 mm gap, showing how reactor geometry affects nitrogen invasion and reagent runoff.\"},{\"panel_id\":\"b\",\"text\":\"Nitrogen mole fraction contour map for reactor R2, showing noticeable intermixing at both rotation speeds.\"},{\"panel_id\":\"c\",\"text\":\"Nitrogen mole fraction contour map for reactor R3, showing partial improvement due to asymmetric inlet placement and reduced intermixing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| R2 | R3 | R4 |\\n|---|---|---|\\n| 0.8 (rad/s) | 0.8 (rad/s) | 0.8 (rad/s) |\\n| 1.0 (rad/s) | 1.0 (rad/s) | 1.0 (rad/s) |\"},{\"panel_id\":\"b\",\"text\":\"| R2 | R3 | R4 |\\n|---|---|---|\\n| 0.8 (rad/s) | 0.8 (rad/s) | 0.8 (rad/s) |\\n| 1.0 (rad/s) | 1.0 (rad/s) | 1.0 (rad/s) |\"},{\"panel_id\":\"c\",\"text\":\"| R2 | R3 | R4 |\\n|---|---|---|\\n| 0.8 (rad/s) | 0.8 (rad/s) | 0.8 (rad/s) |\\n| 1.0 (rad/s) | 1.0 (rad/s) | 1.0 (rad/s) |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The gap distance and angular velocity directly influence reagent separation and surface uniformity in the ASALD process. A 5-mm gap helps minimize intermixing, while angular velocities must remain below 1.0 rad/s to prevent nitrogen from entering the reaction zone and the reagent from running off. By carefully selecting these parameters and optimizing reactor design, such as using R4 with annular sector-shaped inlets, the process achieves uniform deposition and efficient separation, allowing for precise thin film thickness control and improved process performance.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Reactor R4 shows the least intermixing. Unlike R2 and R3, R4 prevents nitrogen invasion into the reaction zone at both 0.8 and 1.0 rad/s.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The text indicates that inert gas begins to invade the reaction zone when the angular wafer velocity exceeds 1.0 rad/s, and the reagent enters the purge zone above 1.2 rad/s.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Gap distance set to 5 mm to limit intermixing while balancing computational efficiency, Asymmetrical positioning of cylindrical injection ports in R3, Annular sector-shaped reagent inlets in R4, Orientation of injection ports (symmetrical or asymmetrical) optimized\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_12.jpg","caption":"Figure 12. Concentration gradient of $\\mathrm{N}_2$ mole fraction for R4 illustrating the small length scales in micrometers for each contour along the reagent-purge boundary region, which limits the availability for studying the temporal progression of surface coverage as depicted in Figure 2.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_12","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1075,"height":641,"image_format":"jpeg","image_sha256":"691e4a1611e142aa498969b9910f8b8742da75300dbd695de898c497b19f1907","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1075,"height":641}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 12 illustrates the concentration gradient of N₂ mole fraction along the reagent-purge boundary in reactor R4. The heatmap shows the small micrometer-scale variations in N₂ concentration, highlighting the limited spatial resolution available for capturing the temporal progression of surface coverage. These small length scales make it challenging to collect surface coverage data at high angular velocities and short time scales, which contributes to the discontinuous curves observed in Figure 11. The figure emphasizes the spatial difficulty in simulating adsorption dynamics near the boundary region.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Position along boundary (µm)|N₂ Mole Fraction|\\n|-----------------------------|----------------|\\n|0.0|0.450|\\n|1.3|0.505|\\n|4.6|0.560|\\n|8.4|0.615|\\n|12.5|0.670|\\n|16.8|0.725|\\n|21.2|0.780|\\n|25.9|0.835|\\n|30.8|0.890|\\n|36.0|0.945|\\n|41.5|1.000|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The N₂ concentration gradient highlights the spatial limitations for collecting accurate surface coverage data along the boundary region. By understanding these small-scale gradients, researchers can adjust simulation parameters, such as time step and nodal resolution, to better capture adsorption dynamics. This insight helps explain the discontinuous curves seen in Figure 11 and guides the design of more precise ASALD simulations, ensuring accurate prediction of surface coverage and uniform film deposition under different operating conditions.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The N₂ mole fraction gradually increases from 0.450 to 1.000 along the boundary, illustrating a smooth concentration gradient across micrometer-scale positions.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Small spatial length scales (micrometers) along the reagent-purge boundary, Limited nodal data collection at these small scales, High angular velocities reducing exposure time, Constraints in temporal resolution (milliseconds) for capturing adsorption dynamics\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_14.jpg","caption":"Figure 14. Contours of (a) Nitrogen mole fraction, (b) $\\mathrm{H}_2\\mathrm{O}$ mole fraction, (c) DEA mole fraction, and (d) $\\mathrm{O_2}$ mole fraction on the wafers at 2 s with $0.4\\mathrm{rad / s}$ From bottom left counter-clockwise, the wafers in the Hacac, BDEAS, and ozone reaction zones, respectively.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_14","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_14","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"},{"panel_id":"d","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1086,"height":908,"image_format":"jpeg","image_sha256":"ca602226180f53a5cc51ae346c9c9ee35542f6d2eda31401d33a29e3618353e0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":538,"height":397},{"panel_id":"b","x":546,"y":2,"width":533,"height":391},{"panel_id":"c","x":0,"y":452,"width":534,"height":406},{"panel_id":"d","x":546,"y":449,"width":533,"height":422}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Nitrogen (N₂) mole fraction on wafers at 2 s and 0.4 rad/s rotation, showing spatial distribution across the wafer surfaces in the Hacac, BDEAS, and ozone reaction zones.\"},{\"panel_id\":\"b\",\"text\":\"Water (H₂O) mole fraction on wafers at 2 s and 0.4 rad/s rotation, visualized as a heatmap showing areas of accumulation and depletion across the wafer surfaces.\"},{\"panel_id\":\"c\",\"text\":\"DEA (C4H11N) mole fraction on wafers at 2 s and 0.4 rad/s rotation, illustrating spatial distribution across the wafer surfaces in its reaction zone.\"},{\"panel_id\":\"d\",\"text\":\"Oxygen (O₂) mole fraction on wafers at 2 s and 0.4 rad/s rotation, visualized as a heatmap showing areas of accumulation and depletion across the wafer surfaces.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Mole fraction of n2| |\\n|--------------------|---|\\n|1.00e+00|96.8e-01|\\n|9.37e-01|9.05e-01|\\n|8.74e-01|8.42e-01|\\n|8.11e-01|7.79e-01|\\n|7.48e-01|7.16e-01|\\n|6.85e-01|6.85e-01|\"},{\"panel_id\":\"b\",\"text\":\"| Mole fraction of h2o| |\\n|---------------------|---|\\n|1.92e-05|1.73e-05|\\n|1.54e-05|1.34e-05|\\n|1.15e-05|9.60e-06|\\n|7.68e-06|5.76e-06|\\n|3.84e-06|1.92e-06|\\n|0.00e+00|0.00e+00|\"},{\"panel_id\":\"c\",\"text\":\"| Mole fraction of c4h11n| |\\n|------------------------|---|\\n|4.40e-04|3.96e-04|\\n|3.52e-04|3.08e-04|\\n|2.64e-04|2.20e-04|\\n|1.76e-04|1.32e-04|\\n|8.80e-05|4.40e-05|\"},{\"panel_id\":\"d\",\"text\":\"| Mole fraction of o2| |\\n|--------------------|---|\\n|7.33e-05|6.60e-05|\\n|5.87e-05|5.13e-05|\\n|4.40e-05|3.67e-05|\\n|2.93e-05|2.20e-05|\\n|1.47e-05|7.33e-06|\\n|0.00e+00|0.00e+00|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding the spatial distribution of reagents on the wafers helps optimize exposure uniformity and minimize undesired intermixing. By analyzing the heatmaps, engineers can adjust rotation speeds, reagent flow rates, and reactor geometry to achieve more uniform surface coverage in each reaction zone. This ensures consistent thin-film deposition and enhances overall process efficiency, preventing areas of incomplete coverage or reagent depletion that could affect film quality.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The bottom left wafer corresponds to the Hacac reaction zone.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The heatmaps show spatial variations in mole fractions for N₂, H₂O, DEA, and O₂, indicating non-uniform distribution across the wafers.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Rotation speed of the wafer (0.4 rad/s), Type of reagent (N₂, H₂O, DEA, O₂), Reaction zone location (Hacac, BDEAS, O₃), Intermixing and diffusion effects between reagents, Temporal progression (evaluated at 2 s)\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_9.jpg","caption":"Figure 9. Contours of the mole fraction of nitrogen on the plate rotating clockwise in R2 with gap distances of $10\\mathrm{mm}$ , $5\\mathrm{mm}$ , and $1\\mathrm{mm}$ in various angular velocities, which depict the invasion of $\\mathrm{N}_2$ into the reaction zones and reagent runoff into the purge zones at higher rotation speeds.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_9","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1080,"height":559,"image_format":"jpeg","image_sha256":"afbcfb47d828d259c54241f1d33269d5f73f6a2459e1c2f7bcbcec74ea569ac0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1080,"height":559}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows nitrogen mole fraction contours on a rotating wafer in reactor R2 for three gap distances (10 mm, 5 mm, and 1 mm) under steady-state and increasing angular velocities. The contours illustrate how nitrogen penetrates the reaction zones and how reagents are dragged into the purge zones as rotation speed increases. Smaller gap distances better suppress intermixing, while higher angular velocities promote nitrogen invasion and reagent runoff, defining operational limits for maintaining self-limiting behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gap Distance|Steady State|Low Angular Velocity|Medium Angular Velocity|High Angular Velocity|Very High Angular Velocity|\\n|-------------|------------|--------------------|-----------------------|---------------------|--------------------------|\\n|10 mm|Contours of N₂ mole fraction at steady state|0.2–0.5 rad/s|0.6–1.0 rad/s|0.7–1.2 rad/s|0.8 rad/s|\\n|5 mm|Contours of N₂ mole fraction at steady state|0.5 rad/s|1.0 rad/s|1.1 rad/s|1.2 rad/s|\\n|1 mm|Contours of N₂ mole fraction at steady state|1.0 rad/s|2.0 rad/s|2.3 rad/s|2.5 rad/s|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Minimizing nitrogen invasion is essential because intermixing disrupts the self-limiting nature of the ALD process by altering local reactant residence times and surface saturation. Excess nitrogen entering the reaction zones or reagents leaking into purge zones can reduce surface coverage uniformity, leading to nonuniform film thickness and degraded material quality. Proper control of gap distance and rotation speed helps maintain effective reagent separation, enabling high-throughput processing without compromising film uniformity.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 1.0 rad/s.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Gap distance between wafer and gas distribution assembly, Angular velocity of wafer rotation, Geometry of reaction and purge zones\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_39_fig4.jpg","caption":"FIG.4. AFM scan showing height-maps of TFLN waveguide sidewall with linear-planar tilt removal before (a) and after 50 ALE cycles (b) (c) Averaged AFM line scans of the TFLN waveguide side profile before and after 50 ALE cycles. The waveguide width decreases by $50 \\mathrm{nm}$ on each side, yielding a lateral etch rate of $1 \\mathrm{nm / }$ cycle, which is comparable to the vertical etch rate of $1.59 \\mathrm{nm / }$ cycle measured on bulk LN. (d) Height-map PSD of the samples before ALE and after 50 cycles of ALE.","id":"train/atomic-layer-etching/experimental-usecase/39/fig4","sample_id":"atomic-layer-etching/experimental-usecase/39/fig4","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/Isotropic atomic layer etching of MgO-doped lithium niobate.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":1089,"height":836,"image_format":"jpeg","image_sha256":"7f2dc7eec2dc5ad56264fd0e57ad9eaaf752699ed5fb998e3a7f9b0c04d1fd2b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":63,"y":12,"width":387,"height":387},{"panel_id":"b","x":559,"y":8,"width":526,"height":399},{"panel_id":"c","x":14,"y":410,"width":482,"height":421},{"panel_id":"d","x":510,"y":410,"width":474,"height":423}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"AFM height map of the TFLN waveguide sidewall before ALE, reporting an RMS roughness (Rq) of 0.82 ± 0.25 nm.\"},{\"panel_id\":\"b\",\"text\":\"AFM height map of the same sidewall after 50 ALE cycles, showing a reduced roughness of 0.55 ± 0.13 nm.\"},{\"panel_id\":\"c\",\"text\":\"Averaged AFM line scans comparing the waveguide sidewall profile before and after ALE, which the caption states corresponds to a lateral etch rate of 1 nm per cycle.\"},{\"panel_id\":\"d\",\"text\":\"PSD of the AFM height maps before and after ALE, showing lower PSD intensity after ALE across the measured spatial frequency range.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Property | Value (nm) |\\n|----------|------------|\\n| Rq (Roughness) | 0.82 ± 0.25 |\"},{\"panel_id\":\"b\",\"text\":\"| Property | Value (nm) | \\n|----------|------------| \\n| Rq (Roughness) | 0.55 ± 0.13 |\"},{\"panel_id\":\"c\",\"text\":\"| Position (nm) | Height (Before ALE) | Height (After ALE) | \\n|---------------|---------------------|--------------------|\\n| 0 | ~320 | ~300 |\\n| 200 | ~320 | ~300 |\\n| 370 | ~320 | ~150 |\\n| 500 | ~0 | ~0 |\\n| 750 | ~0 | ~0 |\"},{\"panel_id\":\"d\",\"text\":\"| Spatial Frequency (nm⁻¹) | PSD (Before ALE) | PSD (After ALE) | \\n|-----------------------|--------------------|------------------|\\n| 0.0 | ~10³ | ~10² |\\n| 0.1 | ~10⁰ | ~10⁰ |\\n| 0.2 | ~5×10⁻¹ | ~1×10⁻¹ |\\n| 0.3 | ~5×10⁻² | ~1×10⁻² |\\n| 0.4 | ~1×10⁻² | ~8×10⁻³ |\\n| 0.5 | ~1×10⁻² | ~8×10⁻³ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.82 ± 0.25 nm.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1 nm per cycle.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The PSD curve after ALE is consistently lower than the curve before ALE across the full spatial frequency range shown. This reduction indicates decreased surface roughness at both low and high spatial frequencies. The trend is directly observable from the relative positions of the two curves in the plot.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_40_fig_6.jpg","caption":"FIG. 6. AFM scan showing height maps of an original ALD sample (a) and after 100 ALE cycles (b). (c) Height map PSD versus spatial frequency for varying number of ALE cycles, showing a decrease in PSD intensity across all spatial frequencies with increasing number of cycles. (d) RMS roughness computed from an AFM height map against the number of ALE cycles. The dashed line is a guide to the eye.","id":"train/atomic-layer-etching/experimental-usecase/40/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/40/fig_6","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/Isotropic plasma-thermal atomic layer etching of.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":1220,"height":886,"image_format":"jpeg","image_sha256":"6707771273a3f7be657fcf1f123e913177f57ff4753a12f94b408ff8cdc1167f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":74,"y":2,"width":503,"height":434},{"panel_id":"b","x":645,"y":2,"width":574,"height":430},{"panel_id":"c","x":13,"y":464,"width":566,"height":416},{"panel_id":"d","x":607,"y":448,"width":549,"height":434}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"AFM height map of original ALD-deposited TiN film (250 x 250 nm area, color scale -1 to +1 nm) showing granular surface morphology.\"},{\"panel_id\":\"b\",\"text\":\"AFM height map after 100 ALE cycles at 300°C showing visibly smoother surface with reduced height variation.\"},{\"panel_id\":\"c\",\"text\":\"PSD versus spatial frequency for original, 40-cycle, and 100-cycle samples. PSD decreases across all frequencies with more cycles, indicating smoothing at length scales from 2 to 20 nm.\"},{\"panel_id\":\"d\",\"text\":\"RMS roughness versus ALE cycles, showing monotonic decrease from 4.4 Å to 2.5 Å (43% reduction) after 100 cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"| Spatial frequency, nm⁻¹ | Original (a.u.) | 40 cycles ALE (a.u.) | 100 cycles ALE (a.u.) |\\n|---|---|---|---|\\n| 0.05 | 6 | 5 | 4 |\\n| 0.1 | 2 | 1.5 | 0.8 |\\n| 0.15 | 0.7 | 0.4 | 0.15 |\\n| 0.2 | 0.3 | 0.15 | 0.05 |\\n| 0.3 | 0.15 | 0.08 | 0.02 |\\n| 0.4 | 0.12 | 0.06 | 0.015 |\\n| 0.5 | 0.10 | 0.05 | 0.012 |\"},{\"panel_id\":\"d\",\"text\":\"| Number of ALE cycles | RMS roughness, Å |\\n|---|---|\\n| 0 | 4.4 |\\n| 20 | 3.9 |\\n| 40 | 3.1 |\\n| 60 | 2.7 |\\n| 80 | 2.5 |\\n| 100 | 2.5 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The RMS roughness decreases monotonically from 4.4 Å to 2.5 Å after 100 cycles, a 43% reduction. The smoothing rate is fastest in early cycles and slows progressively. This is attributed to preferential etching of surface protrusions during each cycle.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The broadband PSD decrease indicates smoothing at multiple length scales (2 to 20 nm) simultaneously. This suggests the ALE process does not preferentially act on features of a particular size. Such behavior is consistent with conformal etching where oxidation and removal steps act uniformly across the surface.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The scan area is 250 x 250 nm, and the height scale ranges from -1 to +1 nm.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Rough surfaces increase the interface area where two-level systems (TLS) can form, which cause microwave loss in superconducting resonators. Reducing roughness through ALE decreases this interface area and potentially the TLS density. The 43% roughness reduction demonstrated here could improve resonator quality factors.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_10.jpg","caption":"Fig. 10. Pressure contours of TMA (a) and DMAF (b) in the TMA injection region for a substrate velocity of $80~mm / s$ and vacuum pressure of - $100\\mathrm{Pa}$ after $1.5s$ of process filter.","id":"train/atomic-layer-etching/simulation-usecase/16/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_10","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1186,"height":878,"image_format":"jpeg","image_sha256":"c3aeee46f85020712557e14ddb8069119d127e5552daf30122fbf82206fe6bdd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":1,"y":424,"width":1181,"height":428},{"panel_id":"a","x":0,"y":0,"width":1187,"height":374}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A heat map displaying the pressure of TMA at various positions in the reactor.\"},{\"panel_id\":\"b\",\"text\":\"A heat map displaying the pressure of DMAF (Dimethylamine formaldehyde) at various positions in the reactor.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No it does not, the pressure is too low to reach the bottom of the trench.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increase bubbler flow to have higher partial pressure of DMAF.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 7th.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is likely, the pressure is constant over the full depth of the trenches indicating that conformal growth can be achieved.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_9.jpg","caption":"Fig. 9. Pressure contours of HF (a) and $\\mathrm{H}_2\\mathrm{O}$ (b) in the HF injection region for a substrate velocity of $80~mm / s$ and vacuum pressure of - $100\\mathrm{Pa}$ after $0.5s$ of process time.","id":"train/atomic-layer-etching/simulation-usecase/16/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_9","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1183,"height":878,"image_format":"jpeg","image_sha256":"5a6687e892eacdaf9f3bd2dcf6effb339251bdfd7e234030ea264fe01cc0458d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":428,"width":1180,"height":396},{"panel_id":"a","x":2,"y":0,"width":1176,"height":375}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Heat map showing the partial pressure of HF underneath the injector head of a spatial ALD tool, with a high pressure underneath the corresponding precursor slit.\"},{\"panel_id\":\"b\",\"text\":\"Heat map showing the partial pressure of water underneath the injector head of a spatial ALD tool, the pressure is non-zero slightly above the surface of the substrate as water is the reaction product.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Water is the reaction product of HF with the substrate, so there is only water at the substrate and some in the purge lines.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This is HF that has not reacted at surface and is purged away.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There is never 100% precursor efficiency, but it seems that there is a lot of HF pumped away.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_27_fig_8.jpg","caption":"FIG. 8. AFM height maps for (a) the as-deposited $43 \\text{nm}$ thick GaN film and (b) after $25 \\text{nm}$ ALE at $300^{\\circ} \\text{C}$ using the standard recipe shown in Fig. 2.","id":"train/atomic-layer-etching/simulation-usecase/27/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/27/fig_8","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":1409,"height":558,"image_format":"jpeg","image_sha256":"2aa78269da3bea22388a12b61ba09bfeb8ce723ef9797dd9276bb9a8033f4c79","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":6,"width":659,"height":550},{"panel_id":"b","x":734,"y":5,"width":670,"height":550}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"AFM height map (1×1 μm²) of the as-deposited 43 nm GaN film showing a rough surface with distinct crystalline grains. Height variations span approximately ±6 nm, with sharp peaks and valleys indicating polycrystalline morphology. RMS roughness is 2.6 ± 0.1 nm.\"},{\"panel_id\":\"b\",\"text\":\"AFM height map (1×1 μm²) of the same GaN film after 25 nm of ALE at 300°C. The surface appears visibly smoother with reduced crystallite height and density. RMS roughness decreased to 1.9 ± 0.1 nm.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The polycrystalline nature of the ALD-grown GaN film, with individual crystalline grains creating peaks and valleys.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1×1 μm².\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Smoother interfaces reduce carrier scattering and improve electron mobility, enhancing final device performance.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE process reduces both the height and density of crystalline surface features. The as-deposited film shows sharp peaks and valleys from polycrystalline GaN grains, while after 25 nm of ALE, the surface becomes visibly smoother with less pronounced height variations. The RMS roughness decreases from 2.6 ± 0.1 nm to 1.9 ± 0.1 nm, demonstrating the smoothing capability of the ALE process.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_8_fig_8.jpg","caption":"FIG. 8. AFM height maps for (a) the as-deposited $43 \\text{nm}$ thick GaN film and (b) after $25 \\text{nm}$ ALE at $300^{\\circ} \\text{C}$ using the standard recipe shown in Fig. 2.","id":"train/atomic-layer-etching/simulation-usecase/8/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/8/fig_8","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/Isotropic atomic layer etching of GaN using SF6 plasma and AI(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1409,"height":558,"image_format":"jpeg","image_sha256":"2aa78269da3bea22388a12b61ba09bfeb8ce723ef9797dd9276bb9a8033f4c79","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":707,"y":3,"width":696,"height":555},{"panel_id":"a","x":3,"y":3,"width":703,"height":552}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows an AFM image with a color gradient indicating height in nanometers. The x-axis represents the horizontal position in micrometers, and the y-axis represents the vertical position in micrometers.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows an AFM with a color gradient indicating height in nanometers. The x-axis represents the horizontal position in micrometers, and the y-axis represents the vertical position in micrometers.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface shows less extremes (high and low points), in addition the figure looks a bit more blurry. This indicates that the surface is less rough.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, there are still high spots present.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The biggest height difference is around 13 nm, these can be called pinholes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In most cases etching process are more affective on upstanding features, resulting in the reduction of extreme height differences.\"}]}]"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_60_figure_4.jpg","caption":"Figure 4. AFM images of $\\mathrm{Y}_2\\mathrm{O}_3$ films for $\\mathrm{Y}(\\mathrm{EtCp})_2(\\mathrm{iPr - amd})$ with (a) $\\mathrm{H}_2\\mathrm{O}$ , (b) $\\mathrm{O}_2$ plasma, and (c) $\\mathrm{H}_2\\mathrm{O}$ plasma and (d) the corresponding XRR patterns.","id":"train/atomic-layer-deposition/experimental-usecase/60/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/60/figure_4","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"},{"panel_id":"deposition","label":"heatmap"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":2,"width":458,"height":354},{"panel_id":"b","x":467,"y":1,"width":461,"height":356},{"panel_id":"c","x":3,"y":360,"width":466,"height":370},{"panel_id":"d","x":463,"y":362,"width":429,"height":377}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/Zhao et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"60","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":931,"height":742,"image_format":"jpeg","image_sha256":"75e55cc0cbcb8486437c7581ad3de99b4a95ca28f2c2d7a9d4b9e958404f7399","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig5.jpg","caption":"FIG.5. Evolution of surface coverage as a function of time during a $0.3\\mathrm{s}$ dose and 1s purge. The simulations assume a precursor pressure at the inlet of $\\rho_{0} = 75\\mathrm{mTorr}$ , and a reaction probability for the self-limited process $\\beta_{10} = 10^{-2}$ .","id":"train/atomic-layer-deposition/simulation-usecase/11/fig5","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig5","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":4,"width":693,"height":1271}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":703,"height":1275,"image_format":"jpeg","image_sha256":"3c1de79f08b76a8642597e5a71024bd8aac5f59a939c9c208d0e1f7c49f8bddd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_11.jpg","caption":"FIG. 11. Evolution of coverage as a function of time for a self-saturating process where $f = 0.1$ and $\\beta_{1b} = 10^{-4}$ . While the fast component reaches saturation after $0.5 \\mathrm{~s}$ , the remaining a $10\\%$ of the sites require an order of magnitude higher dose times, resulting in a homogeneous yet unsaturated profile. A fully saturated wafer from an ideal self-limited process is shown as comparison.","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_11","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_11","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":24,"y":8,"width":309,"height":364},{"panel_id":"b","x":365,"y":10,"width":310,"height":362},{"panel_id":"c","x":24,"y":397,"width":309,"height":308},{"panel_id":"d","x":365,"y":404,"width":310,"height":308},{"panel_id":"e","x":24,"y":745,"width":309,"height":311},{"panel_id":"f","x":385,"y":743,"width":268,"height":305}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":675,"height":1056,"image_format":"jpeg","image_sha256":"ca39ffd3aebefe01c6863c06be41d9dc665a52e8d385e1c0e55c458c92ae3566","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_14.jpg","caption":"FIG. 14. By-product coverage at saturation on $300\\mathrm{mm}$ wafers for two different values of by-product reactivity: (a) $\\beta_{bp} = 10^{-4}$ and (b) $\\beta_{bp} = 10^{-3}$ . The precursor reactivity is $\\beta_{10} = 10^{-2}$ .","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_14","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_14","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":11,"y":488,"width":658,"height":410},{"panel_id":"a","x":7,"y":5,"width":660,"height":461}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":672,"height":900,"image_format":"jpeg","image_sha256":"89a4c796b3a2500b15d9b521be104c9ce42a9363b6e10c528121f737650959fc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_2.jpg","caption":"FIG. 2. Velocity profiles for our two simulation domains: (a) tube cross-flow geometry and (b) $300\\mathrm{mm}$ wafer reactor.","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_2","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"contour heatmap"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":0,"y":202,"width":667,"height":387},{"panel_id":"a","x":5,"y":2,"width":662,"height":199}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":669,"height":594,"image_format":"jpeg","image_sha256":"a8745fe41075f00812ecd8d9bbab7f644c2ccf25ef9ae3738c50211a12cd7e6e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_6.jpg","caption":"FIG. 6. Surface coverage for increasing dose times of 0.1, 0.2, and $0.4 \\text{s}$ . The simulations assume a precursor pressure at the inlet of $\\beta_{0} = 75 \\text{mTorr}$ , and a reaction probability for the self-limited process is $\\beta_{10} = 10^{-2}$ (left) and $\\beta_{10} = 10^{-3}$ (right).","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_6","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"},{"panel_id":"d","label":"heatmap"},{"panel_id":"e","label":"heatmap"},{"panel_id":"f","label":"heatmap"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":9,"y":64,"width":314,"height":314},{"panel_id":"b","x":355,"y":64,"width":317,"height":314},{"panel_id":"c","x":9,"y":410,"width":314,"height":314},{"panel_id":"d","x":355,"y":410,"width":317,"height":313},{"panel_id":"e","x":14,"y":747,"width":304,"height":308},{"panel_id":"f","x":355,"y":742,"width":317,"height":313}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":672,"height":1055,"image_format":"jpeg","image_sha256":"a19ebb315662273a2c35a7bbef90ea0435f314982f7716a7f993044667d2d05b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig_11.jpg","caption":"FIG. 11. (Color online) Pulse-averaged scalar concentrations $(c / c_0)$ on the sample. The injection directions are presented by the triangle in the figure.","id":"train/atomic-layer-deposition/simulation-usecase/31/fig_11","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig_11","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"},{"panel_id":"d","label":"heatmap"},{"panel_id":"e","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a series of heatmaps for Reynolds number (Re) 40, with varying color gradients indicating intensity.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows a series of heatmaps for Reynolds number (Re) 80, with varying color gradients indicating intensity.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows a series of heatmaps for Reynolds number (Re) 200, with varying color gradients indicating intensity.\"},{\"panel_id\":\"d\",\"text\":\"The figure shows a series of heatmaps for Reynolds number (Re) 800, with varying color gradients indicating intensity.\"},{\"panel_id\":\"e\",\"text\":\"The figure shows a series of heatmaps for Reynolds number (Re) 2400, with varying color gradients indicating intensity.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Re=40 | Re=80 | Re=200 | Re=800 | Re=2400 |\\n|---|---|---|---|---|\\n| ![](https://example.com/image1.png) | ![](https://example.com/image2.png) | ![](https://example.com/image3.png) | ![](https://example.com/image4.png) | ![](https://example.com/image5.png) |\"},{\"panel_id\":\"b\",\"text\":\"| Re=40 | Re=80 | Re=200 | Re=800 | Re=2400 |\\n|---|---|---|---|---|\\n| ![](https://example.com/image6.png) | ![](https://example.com/image7.png) | ![](https://example.com/image8.png) | ![](https://example.com/image9.png) | ![](https://example.com/image10.png) |\"},{\"panel_id\":\"c\",\"text\":\"| Re=40 | Re=80 | Re=200 | Re=800 | Re=2400 |\\n|---|---|---|---|---|\\n| ![](https://example.com/image11.png) | ![](https://example.com/image12.png) | ![](https://example.com/image13.png) | ![](https://example.com/image14.png) | ![](https://example.com/image15.png) |\"},{\"panel_id\":\"d\",\"text\":\"| Re=40 | Re=80 | Re=200 | Re=800 | Re=2400 |\\n|---|---|---|---|---|\\n| ![](https://example.com/image16.png) | ![](https://example.com/image17.png) | ![](https://example.com/image18.png) | ![](https://example.com/image19.png) | ![](https://example.com/image20.png) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The flow seems continuous or laminar, as the lines are relatively parallel and the transitions smooth.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the case of CVD it is important that every part of the substrate is exposed to the same amount of flow. This also means that low Reynolds numbers work better.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems as if there is turbulant flow, as the boundaries are not parallel and show lots of twists.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, it is unlikely as the gas density is higher in one part of the sample. However, still saturation can be reached everywhere, but takes a bit longer.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":659,"height":339},{"panel_id":"b","x":0,"y":347,"width":668,"height":246},{"panel_id":"c","x":1,"y":600,"width":663,"height":230},{"panel_id":"d","x":1,"y":840,"width":659,"height":235},{"panel_id":"e","x":1,"y":1073,"width":657,"height":239}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":664,"height":1316,"image_format":"jpeg","image_sha256":"459855ff73879c953feb558fc749b0fd35ea7313f6c7743654c81ae832116d27","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig_12.jpg","caption":"FIG. 12. (Color online) Simulated $\\lambda$ correlation for all Reynolds numbers and the measured surface thickness in the perpendicular injection configuration. The small dots in the thickness maps indicate the locations of the measurement probes while the triangles indicate the directions of the precursor sources with respect to the sample. The lower triangle indicates the TMA injection and the right triangle the injection of water. FIG. 13. (Color online) Simulated $\\lambda$ correlation and the measured surface thickness after 50 and 600 cycles in the opposing injection configuration. (a) The pulse-averaged scalar concentration for constant flow rate during the pulse (left) and $50\\%$ increased flow rate (right). (b) Streamlines on the midsection of the inlet lines during the pulse. The arrow indicates the line with increased flow rate.","id":"train/atomic-layer-deposition/simulation-usecase/31/fig_12","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig_12","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"},{"panel_id":"d","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Heatmaps displaying λ correlation at various Reynolds numbers (Re) ranging from 40 to 2400, for injection directions tilted 90 degrees.\"},{\"panel_id\":\"b\",\"text\":\"Heatmaps displaying λ correlation at various Reynolds numbers (Re) ranging from 40 to 2400, for opposite injection directions.\"},{\"panel_id\":\"c\",\"text\":\"Heatmaps displaying thickness, after 10 and 600 cycles, for injection directions tilted 90 degrees.\"},{\"panel_id\":\"d\",\"text\":\"Heatmaps comparing measured thickness at 10 and 600 cycles, for opposite injection directions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Re=40 | Re=80 | Re=200 | Re=800 | Re=2400 |\\n|---|---|---|---|---|\\n| ![](https://example.com/image1.png) | ![](https://example.com/image2.png) | ![](https://example.com/image3.png) | ![](https://example.com/image4.png) | ![](https://example.com/image5.png) |\"},{\"panel_id\":\"b\",\"text\":\"| Re=40 | Re=80 | Re=200 | Re=800 | Re=2400 |\\n|---|---|---|---|---|\\n| ![](https://example.com/image6.png) | ![](https://example.com/image7.png) | ![](https://example.com/image8.png) | ![](https://example.com/image9.png) | ![](https://example.com/image10.png) |\"},{\"panel_id\":\"c\",\"text\":\"| Measured 10 cycles | Measured 600 cycles |\\n|---|---|\\n| ![](https://example.com/image11.png) | ![](https://example.com/image12.png) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Re = 80\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"800.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the non-uniformity is not constant, for 10 and for 600 cycles the high spots are at completely different locations.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the deposition is more dependent on the flow coming from the black arrow, as there a thicker layer is measured.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":490,"height":967},{"panel_id":"b","x":715,"y":8,"width":500,"height":947},{"panel_id":"c","x":5,"y":981,"width":508,"height":407},{"panel_id":"d","x":612,"y":966,"width":606,"height":423}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1220,"height":1392,"image_format":"jpeg","image_sha256":"d394e05ceeccabb2f025720418a0ea80809bbb262db2fe279cf5d72521aa36ab","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig_14.jpg","caption":"FIG. 14. (Color Online) Effect of increased flow rate during the pulse at $\\mathrm{Re} = 40$","id":"train/atomic-layer-deposition/simulation-usecase/31/fig_14","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig_14","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap displays a gradient color scale ranging from 0.00 to 0.10, with contour lines indicating varying intensities, due to flows from the right side.\"},{\"panel_id\":\"b\",\"text\":\"The heatmap illustrates the flow inside a scientific setup with a central point and surrounding curved lines, representing flow patterns.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Left |Right |\\n|---|---|\\n| 0.00-0.10 |0.10|\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The right image shows a better distribution over the full wafer, eventhough there is more turbulance.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There should not be, if dosed long enough the thickness should be equal everywhere.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The most prominent turbulance features are visible close to the instreames of the gases.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":5,"width":655,"height":418},{"panel_id":"b","x":57,"y":441,"width":506,"height":422}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":653,"height":861,"image_format":"jpeg","image_sha256":"7ad973c015c167d47f3ec348e7d0d9b7a374af3e4eb8fb75a8ffdac7c840f031","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig_5.jpg","caption":"FIG. 5. (Color online) Instantaneous velocity fields on the midsection of the inlet pipes.","id":"train/atomic-layer-deposition/simulation-usecase/31/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig_5","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"},{"panel_id":"d","label":"heatmap"},{"panel_id":"e","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap displays the instantaneous velocity fields in the reactor for a flow with Reynolds number (Re) of 40. There is only laminar flow.\"},{\"panel_id\":\"b\",\"text\":\"The heatmap displays the instantaneous velocity fields in the reactor for a flow with Reynolds number (Re) of 80. There is only laminar flow.\"},{\"panel_id\":\"c\",\"text\":\"The heatmap displays the instantaneous velocity fields in the reactor for a flow with Reynolds number (Re) of 200. There are some features visible in the middle related to turbulant flows.\"},{\"panel_id\":\"d\",\"text\":\"The heatmap displays the instantaneous velocity fields in the reactor for a flow with Reynolds number (Re) of 800. There are features visible in the middle related to turbulant flows.\"},{\"panel_id\":\"e\",\"text\":\"The heatmap displays the instantaneous velocity fields in the reactor for a flow with Reynolds number (Re) of 2400. There are features visible related to turbulant flows, already from the inlet.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes this is bad for the reactor as it can lead to backflow of chemicals into the lines.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that the flow is bounced back from the grid support, but as it can not go back into the stream it will divert into the middle.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No this does not necessarily have to be the case. As long as the exposure time is long enough to also fully cover the less dense areas.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, only laminar flow.\"}]}]","bbox":[{"panel_id":"a","x":8,"y":11,"width":327,"height":347},{"panel_id":"b","x":333,"y":9,"width":347,"height":349},{"panel_id":"c","x":10,"y":359,"width":332,"height":346},{"panel_id":"d","x":342,"y":359,"width":343,"height":343},{"panel_id":"e","x":180,"y":705,"width":334,"height":358}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":680,"height":1064,"image_format":"jpeg","image_sha256":"cd80e8c75fa4cd5df93e809754c66e1bd82ccc593202ea4e1533d3c21dd7dcd3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig_7.jpg","caption":"FIG. 7. (Color online) Streamlines of the average velocity field at the midsection of the inlet pipes. The planes are colored by the mean velocity magnitude $U / U_{\\mathrm{in}}$","id":"train/atomic-layer-deposition/simulation-usecase/31/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig_7","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":0,"width":340,"height":397},{"panel_id":"b","x":344,"y":2,"width":333,"height":397}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":678,"height":397,"image_format":"jpeg","image_sha256":"22d6f7467287bc0a35a584c40c9bbadaa299782ea43cff444527e4ce801c97c6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig_8.jpg","caption":"FIG. 8. (Color online) Time-averaged velocity fields $U / U_{\\mathrm{in}}$ just below the grid part of the reactor for $\\mathrm{Re} = 40$ , 800 and 2400 from left to right, respectively. (a) The time averaged value of parallel to the grid velocity component isocontour at $\\bar{u} = U_{\\mathrm{in}} / 36$ for $\\mathrm{Re} = 80$ (left) and $\\mathrm{Re} = 800$ (right). (b) Turbulence intensity $I = u_{\\mathrm{rms}}^{\\prime} / U_{\\mathrm{in}}$ in percentages for $\\mathrm{Re} = 80$ (left) and $\\mathrm{Re} = 800$ (right) slightly above the plane where the sample lies. Note the two different color scales.","id":"train/atomic-layer-deposition/simulation-usecase/31/fig_8","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig_8","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":5,"width":672,"height":477}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":675,"height":484,"image_format":"jpeg","image_sha256":"3eb5b6f326161adee2a52c6a17618109cde1a94de3a46bdac87bd1146f7a2a7e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig_9.jpg","caption":"FIG. 9. (Color online) Illustrations of the grid passage modes and increase of turbulence intensity at higher Reynolds number. Fig. 10. Spatial average of a precursor on the sample as a function of time during a half-cycle. The averages are presented in four equal sized sector sectors (Q1-Q4) for all Reynolds numbers. The gray region indicates the time of the pulse and the arrow the injection direction.","id":"train/atomic-layer-deposition/simulation-usecase/31/fig_9","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig_9","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates two modes of fluid dynamics: diffusive mode and dynamic mode. It includes a conceptual diagram of the primary and secondary jets, and heatmaps representing concentration distributions.\"},{\"panel_id\":\"b\",\"text\":\"The line charts depict the temporal evolution of normalized concentration (c/c0) at different Reynolds numbers (Re) for four quadrants (Q1, Q2, Q3, Q4).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"|Reynolds number | Graph look|\\n|---|---|\\n|40|Smooth distribution over time|\\n|80|Smooth distribution over time|\\n|200| Smooth distribution over time|\\n|800|Non-smooth distribution over time|\\n|2400|Non-smooth distribution over time|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Diffusive mode\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"red\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The lines show peaks and dips instead of a smooth graph, indicating there is turbulance.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Q3 is seperated from the influx of species by the grid support, resulting in less direct flow. The flow in Q3 is diffused there.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":5,"width":708,"height":744},{"panel_id":"b","x":714,"y":5,"width":687,"height":744}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1406,"height":750,"image_format":"jpeg","image_sha256":"b6fe6225d7dd8ac1d4be3c773354ff435410245ec2ff4cdd31fc17b5ee845dc7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_11.jpg","caption":"Fig. 11 - Snapshots of TMA concentration profiles on the substrate surface, scales in $\\mathrm{mol} / \\mathrm{m}^3$ : a) $20\\mathrm{ms}$ , b) $30\\mathrm{ms}$ , c) $60\\mathrm{ms}$ , d) $80\\mathrm{ms}$ , e) $100\\mathrm{ms}$ , f) $200\\mathrm{ms}$ , after the start of the TMA pulse.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_11","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_11","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"},{"panel_id":"d","label":"heatmap"},{"panel_id":"e","label":"heatmap"},{"panel_id":"f","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image gives TMA concentration profiles on the substrate surface, scales in mol/m3 after the start of the TMA pulse for 20 ms\"},{\"panel_id\":\"b\",\"text\":\"The image gives TMA concentration profiles on the substrate surface, scales in mol/m3 after the start of the TMA pulse for 30 ms\"},{\"panel_id\":\"c\",\"text\":\"The image gives TMA concentration profiles on the substrate surface, scales in mol/m3 after the start of the TMA pulse for 60 ms\"},{\"panel_id\":\"d\",\"text\":\"The image gives TMA concentration profiles on the substrate surface, scales in mol/m3 after the start of the TMA pulse for 80 ms\"},{\"panel_id\":\"e\",\"text\":\"The image gives TMA concentration profiles on the substrate surface, scales in mol/m3 after the start of the TMA pulse for 100 ms\"},{\"panel_id\":\"f\",\"text\":\"The image gives TMA concentration profiles on the substrate surface, scales in mol/m3 after the start of the TMA pulse for 200 ms\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Value |\\n| --- |\\n| 0.0001 |\\n| 0.0002 |\\n| 0.0003 |\\n| 0.0004 |\\n| 0.0005 |\\n| 0.0006 |\\n| 0.0007 |\"},{\"panel_id\":\"b\",\"text\":\"| Value |\\n| --- |\\n| 0.0003 |\\n| 0.0004 |\\n| 0.0005 |\\n| 0.0006 |\\n| 0.0007 |\\n| 0.0008 |\\n| 0.0009 |\"},{\"panel_id\":\"c\",\"text\":\"| Value |\\n| --- |\\n| 500E-6 |\\n| 460E-6 |\\n| 480E-6 |\\n| 500E-6 |\\n| 520E-6 |\\n| 540E-6 |\\n| 560E-6 |\\n| 580E-6 |\"},{\"panel_id\":\"d\",\"text\":\"| Value |\\n| --- |\\n| 440E-6 |\\n| 460E-6 |\\n| 480E-6 |\\n| 500E-6 |\\n| 520E-6 |\\n| 540E-6 |\\n| 560E-6 |\\n| 580E-6 |\"},{\"panel_id\":\"e\",\"text\":\"| Value |\\n| --- |\\n| 380E-6 |\\n| 400E-6 |\\n| 420E-6 |\\n| 440E-6 |\\n| 460E-6 |\\n| 480E-6 |\\n| 500E-6 |\\n| 520E-6 |\\n| 540E-6 |\\n| 560E-6 |\\n| 580E-6 |\"},{\"panel_id\":\"f\",\"text\":\"| Value |\\n| --- |\\n| 200E-6 |\\n| 220E-6 |\\n| 240E-6 |\\n| 260E-6 |\\n| 280E-6 |\\n| 300E-6 |\\n| 320E-6 |\\n| 340E-6 |\\n| 360E-6 |\\n| 380E-6 |\\n| 400E-6 |\\n| 420E-6 |\\n| 440E-6 |\\n| 460E-6 |\\n| 480E-6 |\\n| 500E-6 |\\n| 520E-6 |\\n| 540E-6 |\\n| 560E-6 |\\n| 580E-6 |\"}]","vqa":"[{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The loading door Ar flow purges the side of the substrate exposed to it. The loading door side of the substrate is exposed to a lower TMA concentration during the whole TMA exposure step after 60 ms from the start of the TMA pulse. The concentrations remain in the same order of magnitude as in c. The maximum concentration difference is 15.3% for d and 15.6% for e.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Notably, 20 ms after the start of the TMA pulse, the maximum concentration computed on the substrate exceeds 7 × 10−4mol/m3,while the minimum value is seven times smaller, i.e 1 × 10−4mol/m3, leading to a concentration difference of 93%. The maximum and minimum values are 9 × 10−4and 3 × 10−4mol/m3 respectively,after 30 ms.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":7,"width":505,"height":332},{"panel_id":"b","x":670,"y":7,"width":511,"height":338},{"panel_id":"c","x":10,"y":415,"width":487,"height":351},{"panel_id":"d","x":696,"y":410,"width":485,"height":356},{"panel_id":"e","x":10,"y":830,"width":485,"height":345},{"panel_id":"f","x":668,"y":836,"width":516,"height":338}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1189,"height":1205,"image_format":"jpeg","image_sha256":"3583516b50ea6d06ddf0dfc06a9b61786a416f9f4b7e91f356234d9e92c67e4e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_12.jpg","caption":"Fig. 12 - Integral over time of the TMA flux on the substrate surface, scale in $\\mathrm{mol} / \\mathrm{m}^2$ , during the whole TMA exposure.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_12","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_12","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The visualization shows a heatmap of TMA flux on the substrate surface, scale in mol/m2, during the whole TMA exposure integrated over time, with a color gradient indicating varying values, ranging from blue (lowest value) to red (highest value). The color bar on the right provides the scale.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Value |\\n|---|\\n| 0.0118 |\\n| 0.0120 |\\n| 0.0122 |\\n| 0.0124 |\\n| 0.0126 |\\n| 0.0128 |\\n| 0.0130 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In order to analyze the exposure of the substrate to TMA molecules, the species flux on the substrate surface, using the Hertz-Knudsen equation, in terms of mol/m2s is calculated. These species flux is integrated over the whole TMA exposure and purging time of the ALD cycle. The resulting exposure of the substrate to TMA molecules is plotted in the image\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TMA flux integral has a maximum between the substrate center and the loading door side. This corresponds to the concentration profiles on the substrate during the TMA pulse, when the re-circulation in the gas phase exists. This means that the majority of the substrate exposure to TMA occurs during the first ms of the TMA pulse.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The computed maximum exposure difference on the substrate surface during the TMA exposure is 10.7%.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":5,"width":846,"height":633}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":856,"height":639,"image_format":"jpeg","image_sha256":"ca638fec0c8b993a13260b7db3c55a6318d4cf3144f2d94bf33b23d70cd9959a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_14.jpg","caption":"Fig. 14 - Snapshots of the $\\mathbb{H}_2\\mathbb{O}$ concentration profile on the substrate surface, scales in $\\mathrm{mol} / \\mathrm{m}^3$ : a) $20\\mathrm{ms}$ , b) $30\\mathrm{ms}$ , c) $60\\mathrm{ms}$ , d) $100\\mathrm{ms}$ , e) $120\\mathrm{ms}$ , f) $200\\mathrm{ms}$ after the start of the $\\mathrm{H}_2\\mathrm{O}$ pulse.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_14","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_14","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"},{"panel_id":"d","label":"heatmap"},{"panel_id":"e","label":"heatmap"},{"panel_id":"f","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap images display the H2O concentration profile on the substrate surface, scales in mol/m3 for various duration after the start of the H2O pulse.\"},{\"panel_id\":\"b\",\"text\":\"The heatmap images display the H2O concentration profile on the substrate surface, scales in mol/m3 for various duration after the start of the H2O pulse.\"},{\"panel_id\":\"c\",\"text\":\"The heatmap images display the H2O concentration profile on the substrate surface, scales in mol/m3 for various duration after the start of the H2O pulse.\"},{\"panel_id\":\"d\",\"text\":\"The heatmap images display the H2O concentration profile on the substrate surface, scales in mol/m3 for various duration after the start of the H2O pulse.\"},{\"panel_id\":\"e\",\"text\":\"The heatmap images display the H2O concentration profile on the substrate surface, scales in mol/m3 for various duration after the start of the H2O pulse.\"},{\"panel_id\":\"f\",\"text\":\"The heatmap images display the H2O concentration profile on the substrate surface, scales in mol/m3 for various duration after the start of the H2O pulse.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Value |\\n| --- |\\n| 0.00032 |\\n| 0.00034 |\\n| 0.00036 |\\n| 0.00038 |\\n| 0.0004 |\\n| 0.00042 |\\n| 0.00044 |\\n| 0.00046 |\"},{\"panel_id\":\"b\",\"text\":\"| Value |\\n| --- |\\n| 0.0005000 |\\n| 0.0005200 |\\n| 0.0005400 |\\n| 0.0005600 |\\n| 0.0005800 |\\n| 0.0006000 |\\n| 0.0006200 |\\n| 0.0006400 |\\n| 0.0006600 |\\n| 0.0006800 |\"},{\"panel_id\":\"c\",\"text\":\"| Value |\\n| --- |\\n| 0.0007000 |\\n| 0.0007200 |\\n| 0.0007400 |\\n| 0.0007600 |\\n| 0.0007800 |\\n| 0.0008000 |\\n| 0.0008200 |\"},{\"panel_id\":\"d\",\"text\":\"| Value |\\n| --- |\\n| 0.0006300 |\\n| 0.0006400 |\\n| 0.0006500 |\\n| 0.0006600 |\\n| 0.0006700 |\\n| 0.0006800 |\"},{\"panel_id\":\"e\",\"text\":\"| Value |\\n| --- |\\n| 0.0005700 |\\n| 0.0005800 |\\n| 0.0005900 |\\n| 0.0005950 |\"},{\"panel_id\":\"f\",\"text\":\"| Value |\\n| --- |\\n| 0.0003650 |\\n| 0.0003700 |\\n| 0.0003750 |\\n| 0.0003800 |\\n| 0.0003850 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Snapshot a lead to a maximum concentration difference of 35.5%\\n2. Snapshot b, The maximum concentration difference is 26.6% \\n3. Snapshot c, the difference is 17.65% \\n4. Snapshot d it is 8.7%\\n5. Snapshot e, the maximum concentration difference is 4.5%\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the first ms of the H2O pulse, the high flow rate coming from the side inlet of the reactor suppresses the loading door purging flow, thus leading to a concentration profile with a maximum at the substrate center\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"From the predictions in the images, it can be concluded that during the first ms of the H2O pulse, the values of the H2O concentrations on the substrate surface are of the same order of magnitude,unlike the TMA pulse, where it took 30 ms for an almost full substrate surface exposure to TMA. It is also noted that the overall H2O concentrations are higher than in the TMA case\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the flow rate from the side inlet decreases, the loading door purge influences the species distribution, thus leading to a constantly lower H2O concentration on the loading door side of the substrate, which is exposed to the purging gas. This gradual effect is shown in b–e.\"}]}]","bbox":[{"panel_id":"a","x":11,"y":15,"width":466,"height":382},{"panel_id":"b","x":682,"y":14,"width":485,"height":384},{"panel_id":"c","x":11,"y":494,"width":485,"height":377},{"panel_id":"d","x":693,"y":476,"width":483,"height":383},{"panel_id":"e","x":11,"y":951,"width":485,"height":387},{"panel_id":"f","x":693,"y":952,"width":483,"height":379}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1184,"height":1380,"image_format":"jpeg","image_sha256":"57bb12625dc93a2c45b43335baabaf035552550c1541a86a3f1063beaa929413","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_15.jpg","caption":"Fig. 15 - Integral over time of the $\\mathbf{H}_2\\mathbf{O}$ flux on the substrate surface, during the whole $\\mathbf{H}_2\\mathbf{O}$ exposure and purge, scale in $\\mathrm{mol} / \\mathrm{m}^2$ .","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_15","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_15","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This specific heatmap displays the integral over time of the H2O flux on the substrate surface, during the whole H2O exposure and purge, scale in mol/m2.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Value |\\n|---|\\n| 0.038 |\\n| 0.0385 |\\n| 0.039 |\\n| 0.0395 |\\n| 0.04 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"By integrating the concentration profiles obtained after every duration, over the whole duration of the H2O exposure and purge, the total exposure is determined and shown in the figure.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The computed time integral of the species flux shows anon-uniform exposure of the substrate surface to H2O. A lower exposure is observed on the loading door side of the substrate, while a maximum is calculated on the opposite side\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The maximum total exposure difference is 6.7%. This value is lower than the corresponding value for the TMA exposure\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If the H2O exposure is not high enough to saturate the surface, a non-uniform film will be deposited\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":833,"height":632}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":844,"height":642,"image_format":"jpeg","image_sha256":"79fc28d8304fe8641389300e3393745aea429f6b50ea0e1263d813642956a9c3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_6.jpg","caption":"Fig. 6 - a) Temperature field inside the reactor chamber, b) temperature profile on the substrate surface for the substrate center at $300^{\\circ}$ C.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_6","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Temperature field inside the reactor chamber\"},{\"panel_id\":\"b\",\"text\":\"temperature profile on the substrate surface for the substratecenter at 300◦C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Object | Temperature Range (°C) |\\n|-----------|--------------------------|\\n| Reactor | 50 – 300 |\"},{\"panel_id\":\"b\",\"text\":\"| Object | Temperature Range (°C) |\\n|-----------|--------------------------|\\n| Substrate| 280 – 300 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Ar flow entering the reactor chamber at 20◦C lowers the temperature in the area close to the loading door and at the nearby substrate side(at 279◦C). The temperature difference between the substrate center and the loading door side reads 21◦C.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The gas is quite isothermal into the reactor with a temperature close to that of the walls (270◦C), except near the inlet zones where it is colder and near the substrate where it is hotter (300◦C)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The substrate is not isothermal for image b, due to the cooling provided by the gas coming from the vicinity of the reactor walls. The calculated temperature on the substrate perimeter is equal to 289◦C.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":1,"width":418,"height":440},{"panel_id":"b","x":485,"y":1,"width":521,"height":447}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1008,"height":481,"image_format":"jpeg","image_sha256":"5533a841d6aeebaa109b60324d8f37ab237781965394f399d8dc1895835eac20","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_10.jpg","caption":"Figure 10. Contours of the mole fraction of nitrogen on the plate rotating clockwise in R2, R3 and R4 with a gap distance of $5\\mathrm{mm}$ in the angular velocities of $0.8$ and $1.0\\mathrm{rad / s}$ . The legend for the contours is present in Figure 9. A ring in orange denotes a nitrogen invasion into the BDEAS reaction zone, and a ring in green denotes the BDEAS runoff from the reaction zone.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_10","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Nitrogen mole fraction contour map for reactor R1 on a rotating wafer at angular velocities of 0.8 and 1.0 rad/s with a 5 mm gap, showing how reactor geometry affects nitrogen invasion and reagent runoff.\"},{\"panel_id\":\"b\",\"text\":\"Nitrogen mole fraction contour map for reactor R2, showing noticeable intermixing at both rotation speeds.\"},{\"panel_id\":\"c\",\"text\":\"Nitrogen mole fraction contour map for reactor R3, showing partial improvement due to asymmetric inlet placement and reduced intermixing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| R2 | R3 | R4 |\\n|---|---|---|\\n| 0.8 (rad/s) | 0.8 (rad/s) | 0.8 (rad/s) |\\n| 1.0 (rad/s) | 1.0 (rad/s) | 1.0 (rad/s) |\"},{\"panel_id\":\"b\",\"text\":\"| R2 | R3 | R4 |\\n|---|---|---|\\n| 0.8 (rad/s) | 0.8 (rad/s) | 0.8 (rad/s) |\\n| 1.0 (rad/s) | 1.0 (rad/s) | 1.0 (rad/s) |\"},{\"panel_id\":\"c\",\"text\":\"| R2 | R3 | R4 |\\n|---|---|---|\\n| 0.8 (rad/s) | 0.8 (rad/s) | 0.8 (rad/s) |\\n| 1.0 (rad/s) | 1.0 (rad/s) | 1.0 (rad/s) |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The gap distance and angular velocity directly influence reagent separation and surface uniformity in the ASALD process. A 5-mm gap helps minimize intermixing, while angular velocities must remain below 1.0 rad/s to prevent nitrogen from entering the reaction zone and the reagent from running off. By carefully selecting these parameters and optimizing reactor design, such as using R4 with annular sector-shaped inlets, the process achieves uniform deposition and efficient separation, allowing for precise thin film thickness control and improved process performance.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Reactor R4 shows the least intermixing. Unlike R2 and R3, R4 prevents nitrogen invasion into the reaction zone at both 0.8 and 1.0 rad/s.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The text indicates that inert gas begins to invade the reaction zone when the angular wafer velocity exceeds 1.0 rad/s, and the reagent enters the purge zone above 1.2 rad/s.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Gap distance set to 5 mm to limit intermixing while balancing computational efficiency, Asymmetrical positioning of cylindrical injection ports in R3, Annular sector-shaped reagent inlets in R4, Orientation of injection ports (symmetrical or asymmetrical) optimized\"}]}]","bbox":[{"panel_id":"a","x":4,"y":6,"width":232,"height":344},{"panel_id":"b","x":240,"y":5,"width":155,"height":344},{"panel_id":"c","x":395,"y":9,"width":140,"height":341}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":536,"height":350,"image_format":"jpeg","image_sha256":"76d7b64a325c6f16250dc596620a2402fbf0ce0b3d6baa3bb7f2a7d9cd216cf3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_12.jpg","caption":"Figure 12. Concentration gradient of $\\mathrm{N}_2$ mole fraction for R4 illustrating the small length scales in micrometers for each contour along the reagent-purge boundary region, which limits the availability for studying the temporal progression of surface coverage as depicted in Figure 2.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_12","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 12 illustrates the concentration gradient of N₂ mole fraction along the reagent-purge boundary in reactor R4. The heatmap shows the small micrometer-scale variations in N₂ concentration, highlighting the limited spatial resolution available for capturing the temporal progression of surface coverage. These small length scales make it challenging to collect surface coverage data at high angular velocities and short time scales, which contributes to the discontinuous curves observed in Figure 11. The figure emphasizes the spatial difficulty in simulating adsorption dynamics near the boundary region.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Position along boundary (µm)|N₂ Mole Fraction|\\n|-----------------------------|----------------|\\n|0.0|0.450|\\n|1.3|0.505|\\n|4.6|0.560|\\n|8.4|0.615|\\n|12.5|0.670|\\n|16.8|0.725|\\n|21.2|0.780|\\n|25.9|0.835|\\n|30.8|0.890|\\n|36.0|0.945|\\n|41.5|1.000|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The N₂ concentration gradient highlights the spatial limitations for collecting accurate surface coverage data along the boundary region. By understanding these small-scale gradients, researchers can adjust simulation parameters, such as time step and nodal resolution, to better capture adsorption dynamics. This insight helps explain the discontinuous curves seen in Figure 11 and guides the design of more precise ASALD simulations, ensuring accurate prediction of surface coverage and uniform film deposition under different operating conditions.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The N₂ mole fraction gradually increases from 0.450 to 1.000 along the boundary, illustrating a smooth concentration gradient across micrometer-scale positions.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Small spatial length scales (micrometers) along the reagent-purge boundary, Limited nodal data collection at these small scales, High angular velocities reducing exposure time, Constraints in temporal resolution (milliseconds) for capturing adsorption dynamics\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1075,"height":641}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1075,"height":641,"image_format":"jpeg","image_sha256":"691e4a1611e142aa498969b9910f8b8742da75300dbd695de898c497b19f1907","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_14.jpg","caption":"Figure 14. Contours of (a) Nitrogen mole fraction, (b) $\\mathrm{H}_2\\mathrm{O}$ mole fraction, (c) DEA mole fraction, and (d) $\\mathrm{O_2}$ mole fraction on the wafers at 2 s with $0.4\\mathrm{rad / s}$ From bottom left counter-clockwise, the wafers in the Hacac, BDEAS, and ozone reaction zones, respectively.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_14","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_14","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"},{"panel_id":"d","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Nitrogen (N₂) mole fraction on wafers at 2 s and 0.4 rad/s rotation, showing spatial distribution across the wafer surfaces in the Hacac, BDEAS, and ozone reaction zones.\"},{\"panel_id\":\"b\",\"text\":\"Water (H₂O) mole fraction on wafers at 2 s and 0.4 rad/s rotation, visualized as a heatmap showing areas of accumulation and depletion across the wafer surfaces.\"},{\"panel_id\":\"c\",\"text\":\"DEA (C4H11N) mole fraction on wafers at 2 s and 0.4 rad/s rotation, illustrating spatial distribution across the wafer surfaces in its reaction zone.\"},{\"panel_id\":\"d\",\"text\":\"Oxygen (O₂) mole fraction on wafers at 2 s and 0.4 rad/s rotation, visualized as a heatmap showing areas of accumulation and depletion across the wafer surfaces.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Mole fraction of n2| |\\n|--------------------|---|\\n|1.00e+00|96.8e-01|\\n|9.37e-01|9.05e-01|\\n|8.74e-01|8.42e-01|\\n|8.11e-01|7.79e-01|\\n|7.48e-01|7.16e-01|\\n|6.85e-01|6.85e-01|\"},{\"panel_id\":\"b\",\"text\":\"| Mole fraction of h2o| |\\n|---------------------|---|\\n|1.92e-05|1.73e-05|\\n|1.54e-05|1.34e-05|\\n|1.15e-05|9.60e-06|\\n|7.68e-06|5.76e-06|\\n|3.84e-06|1.92e-06|\\n|0.00e+00|0.00e+00|\"},{\"panel_id\":\"c\",\"text\":\"| Mole fraction of c4h11n| |\\n|------------------------|---|\\n|4.40e-04|3.96e-04|\\n|3.52e-04|3.08e-04|\\n|2.64e-04|2.20e-04|\\n|1.76e-04|1.32e-04|\\n|8.80e-05|4.40e-05|\"},{\"panel_id\":\"d\",\"text\":\"| Mole fraction of o2| |\\n|--------------------|---|\\n|7.33e-05|6.60e-05|\\n|5.87e-05|5.13e-05|\\n|4.40e-05|3.67e-05|\\n|2.93e-05|2.20e-05|\\n|1.47e-05|7.33e-06|\\n|0.00e+00|0.00e+00|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding the spatial distribution of reagents on the wafers helps optimize exposure uniformity and minimize undesired intermixing. By analyzing the heatmaps, engineers can adjust rotation speeds, reagent flow rates, and reactor geometry to achieve more uniform surface coverage in each reaction zone. This ensures consistent thin-film deposition and enhances overall process efficiency, preventing areas of incomplete coverage or reagent depletion that could affect film quality.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The bottom left wafer corresponds to the Hacac reaction zone.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The heatmaps show spatial variations in mole fractions for N₂, H₂O, DEA, and O₂, indicating non-uniform distribution across the wafers.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Rotation speed of the wafer (0.4 rad/s), Type of reagent (N₂, H₂O, DEA, O₂), Reaction zone location (Hacac, BDEAS, O₃), Intermixing and diffusion effects between reagents, Temporal progression (evaluated at 2 s)\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":538,"height":397},{"panel_id":"b","x":546,"y":2,"width":533,"height":391},{"panel_id":"c","x":0,"y":452,"width":534,"height":406},{"panel_id":"d","x":546,"y":449,"width":533,"height":422}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1086,"height":908,"image_format":"jpeg","image_sha256":"ca602226180f53a5cc51ae346c9c9ee35542f6d2eda31401d33a29e3618353e0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_9.jpg","caption":"Figure 9. Contours of the mole fraction of nitrogen on the plate rotating clockwise in R2 with gap distances of $10\\mathrm{mm}$ , $5\\mathrm{mm}$ , and $1\\mathrm{mm}$ in various angular velocities, which depict the invasion of $\\mathrm{N}_2$ into the reaction zones and reagent runoff into the purge zones at higher rotation speeds.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_9","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows nitrogen mole fraction contours on a rotating wafer in reactor R2 for three gap distances (10 mm, 5 mm, and 1 mm) under steady-state and increasing angular velocities. The contours illustrate how nitrogen penetrates the reaction zones and how reagents are dragged into the purge zones as rotation speed increases. Smaller gap distances better suppress intermixing, while higher angular velocities promote nitrogen invasion and reagent runoff, defining operational limits for maintaining self-limiting behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gap Distance|Steady State|Low Angular Velocity|Medium Angular Velocity|High Angular Velocity|Very High Angular Velocity|\\n|-------------|------------|--------------------|-----------------------|---------------------|--------------------------|\\n|10 mm|Contours of N₂ mole fraction at steady state|0.2–0.5 rad/s|0.6–1.0 rad/s|0.7–1.2 rad/s|0.8 rad/s|\\n|5 mm|Contours of N₂ mole fraction at steady state|0.5 rad/s|1.0 rad/s|1.1 rad/s|1.2 rad/s|\\n|1 mm|Contours of N₂ mole fraction at steady state|1.0 rad/s|2.0 rad/s|2.3 rad/s|2.5 rad/s|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Minimizing nitrogen invasion is essential because intermixing disrupts the self-limiting nature of the ALD process by altering local reactant residence times and surface saturation. Excess nitrogen entering the reaction zones or reagents leaking into purge zones can reduce surface coverage uniformity, leading to nonuniform film thickness and degraded material quality. Proper control of gap distance and rotation speed helps maintain effective reagent separation, enabling high-throughput processing without compromising film uniformity.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 1.0 rad/s.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Gap distance between wafer and gas distribution assembly, Angular velocity of wafer rotation, Geometry of reaction and purge zones\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1080,"height":559}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1080,"height":559,"image_format":"jpeg","image_sha256":"afbcfb47d828d259c54241f1d33269d5f73f6a2459e1c2f7bcbcec74ea569ac0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_39_fig4.jpg","caption":"FIG.4. AFM scan showing height-maps of TFLN waveguide sidewall with linear-planar tilt removal before (a) and after 50 ALE cycles (b) (c) Averaged AFM line scans of the TFLN waveguide side profile before and after 50 ALE cycles. The waveguide width decreases by $50 \\mathrm{nm}$ on each side, yielding a lateral etch rate of $1 \\mathrm{nm / }$ cycle, which is comparable to the vertical etch rate of $1.59 \\mathrm{nm / }$ cycle measured on bulk LN. (d) Height-map PSD of the samples before ALE and after 50 cycles of ALE.","id":"train/atomic-layer-etching/experimental-usecase/39/fig4","sample_id":"atomic-layer-etching/experimental-usecase/39/fig4","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"AFM height map of the TFLN waveguide sidewall before ALE, reporting an RMS roughness (Rq) of 0.82 ± 0.25 nm.\"},{\"panel_id\":\"b\",\"text\":\"AFM height map of the same sidewall after 50 ALE cycles, showing a reduced roughness of 0.55 ± 0.13 nm.\"},{\"panel_id\":\"c\",\"text\":\"Averaged AFM line scans comparing the waveguide sidewall profile before and after ALE, which the caption states corresponds to a lateral etch rate of 1 nm per cycle.\"},{\"panel_id\":\"d\",\"text\":\"PSD of the AFM height maps before and after ALE, showing lower PSD intensity after ALE across the measured spatial frequency range.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Property | Value (nm) |\\n|----------|------------|\\n| Rq (Roughness) | 0.82 ± 0.25 |\"},{\"panel_id\":\"b\",\"text\":\"| Property | Value (nm) | \\n|----------|------------| \\n| Rq (Roughness) | 0.55 ± 0.13 |\"},{\"panel_id\":\"c\",\"text\":\"| Position (nm) | Height (Before ALE) | Height (After ALE) | \\n|---------------|---------------------|--------------------|\\n| 0 | ~320 | ~300 |\\n| 200 | ~320 | ~300 |\\n| 370 | ~320 | ~150 |\\n| 500 | ~0 | ~0 |\\n| 750 | ~0 | ~0 |\"},{\"panel_id\":\"d\",\"text\":\"| Spatial Frequency (nm⁻¹) | PSD (Before ALE) | PSD (After ALE) | \\n|-----------------------|--------------------|------------------|\\n| 0.0 | ~10³ | ~10² |\\n| 0.1 | ~10⁰ | ~10⁰ |\\n| 0.2 | ~5×10⁻¹ | ~1×10⁻¹ |\\n| 0.3 | ~5×10⁻² | ~1×10⁻² |\\n| 0.4 | ~1×10⁻² | ~8×10⁻³ |\\n| 0.5 | ~1×10⁻² | ~8×10⁻³ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.82 ± 0.25 nm.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1 nm per cycle.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The PSD curve after ALE is consistently lower than the curve before ALE across the full spatial frequency range shown. This reduction indicates decreased surface roughness at both low and high spatial frequencies. The trend is directly observable from the relative positions of the two curves in the plot.\"}]}]","bbox":[{"panel_id":"a","x":63,"y":12,"width":387,"height":387},{"panel_id":"b","x":559,"y":8,"width":526,"height":399},{"panel_id":"c","x":14,"y":410,"width":482,"height":421},{"panel_id":"d","x":510,"y":410,"width":474,"height":423}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/Isotropic atomic layer etching of MgO-doped lithium niobate.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":1089,"height":836,"image_format":"jpeg","image_sha256":"7f2dc7eec2dc5ad56264fd0e57ad9eaaf752699ed5fb998e3a7f9b0c04d1fd2b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_40_fig_6.jpg","caption":"FIG. 6. AFM scan showing height maps of an original ALD sample (a) and after 100 ALE cycles (b). (c) Height map PSD versus spatial frequency for varying number of ALE cycles, showing a decrease in PSD intensity across all spatial frequencies with increasing number of cycles. (d) RMS roughness computed from an AFM height map against the number of ALE cycles. The dashed line is a guide to the eye.","id":"train/atomic-layer-etching/experimental-usecase/40/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/40/fig_6","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"AFM height map of original ALD-deposited TiN film (250 x 250 nm area, color scale -1 to +1 nm) showing granular surface morphology.\"},{\"panel_id\":\"b\",\"text\":\"AFM height map after 100 ALE cycles at 300°C showing visibly smoother surface with reduced height variation.\"},{\"panel_id\":\"c\",\"text\":\"PSD versus spatial frequency for original, 40-cycle, and 100-cycle samples. PSD decreases across all frequencies with more cycles, indicating smoothing at length scales from 2 to 20 nm.\"},{\"panel_id\":\"d\",\"text\":\"RMS roughness versus ALE cycles, showing monotonic decrease from 4.4 Å to 2.5 Å (43% reduction) after 100 cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"| Spatial frequency, nm⁻¹ | Original (a.u.) | 40 cycles ALE (a.u.) | 100 cycles ALE (a.u.) |\\n|---|---|---|---|\\n| 0.05 | 6 | 5 | 4 |\\n| 0.1 | 2 | 1.5 | 0.8 |\\n| 0.15 | 0.7 | 0.4 | 0.15 |\\n| 0.2 | 0.3 | 0.15 | 0.05 |\\n| 0.3 | 0.15 | 0.08 | 0.02 |\\n| 0.4 | 0.12 | 0.06 | 0.015 |\\n| 0.5 | 0.10 | 0.05 | 0.012 |\"},{\"panel_id\":\"d\",\"text\":\"| Number of ALE cycles | RMS roughness, Å |\\n|---|---|\\n| 0 | 4.4 |\\n| 20 | 3.9 |\\n| 40 | 3.1 |\\n| 60 | 2.7 |\\n| 80 | 2.5 |\\n| 100 | 2.5 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The RMS roughness decreases monotonically from 4.4 Å to 2.5 Å after 100 cycles, a 43% reduction. The smoothing rate is fastest in early cycles and slows progressively. This is attributed to preferential etching of surface protrusions during each cycle.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The broadband PSD decrease indicates smoothing at multiple length scales (2 to 20 nm) simultaneously. This suggests the ALE process does not preferentially act on features of a particular size. Such behavior is consistent with conformal etching where oxidation and removal steps act uniformly across the surface.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The scan area is 250 x 250 nm, and the height scale ranges from -1 to +1 nm.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Rough surfaces increase the interface area where two-level systems (TLS) can form, which cause microwave loss in superconducting resonators. Reducing roughness through ALE decreases this interface area and potentially the TLS density. The 43% roughness reduction demonstrated here could improve resonator quality factors.\"}]}]","bbox":[{"panel_id":"a","x":74,"y":2,"width":503,"height":434},{"panel_id":"b","x":645,"y":2,"width":574,"height":430},{"panel_id":"c","x":13,"y":464,"width":566,"height":416},{"panel_id":"d","x":607,"y":448,"width":549,"height":434}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/Isotropic plasma-thermal atomic layer etching of.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":1220,"height":886,"image_format":"jpeg","image_sha256":"6707771273a3f7be657fcf1f123e913177f57ff4753a12f94b408ff8cdc1167f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_10.jpg","caption":"Fig. 10. Pressure contours of TMA (a) and DMAF (b) in the TMA injection region for a substrate velocity of $80~mm / s$ and vacuum pressure of - $100\\mathrm{Pa}$ after $1.5s$ of process filter.","id":"train/atomic-layer-etching/simulation-usecase/16/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_10","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A heat map displaying the pressure of TMA at various positions in the reactor.\"},{\"panel_id\":\"b\",\"text\":\"A heat map displaying the pressure of DMAF (Dimethylamine formaldehyde) at various positions in the reactor.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No it does not, the pressure is too low to reach the bottom of the trench.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increase bubbler flow to have higher partial pressure of DMAF.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 7th.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is likely, the pressure is constant over the full depth of the trenches indicating that conformal growth can be achieved.\"}]}]","bbox":[{"panel_id":"b","x":1,"y":424,"width":1181,"height":428},{"panel_id":"a","x":0,"y":0,"width":1187,"height":374}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1186,"height":878,"image_format":"jpeg","image_sha256":"c3aeee46f85020712557e14ddb8069119d127e5552daf30122fbf82206fe6bdd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_9.jpg","caption":"Fig. 9. Pressure contours of HF (a) and $\\mathrm{H}_2\\mathrm{O}$ (b) in the HF injection region for a substrate velocity of $80~mm / s$ and vacuum pressure of - $100\\mathrm{Pa}$ after $0.5s$ of process time.","id":"train/atomic-layer-etching/simulation-usecase/16/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_9","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Heat map showing the partial pressure of HF underneath the injector head of a spatial ALD tool, with a high pressure underneath the corresponding precursor slit.\"},{\"panel_id\":\"b\",\"text\":\"Heat map showing the partial pressure of water underneath the injector head of a spatial ALD tool, the pressure is non-zero slightly above the surface of the substrate as water is the reaction product.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Water is the reaction product of HF with the substrate, so there is only water at the substrate and some in the purge lines.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This is HF that has not reacted at surface and is purged away.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There is never 100% precursor efficiency, but it seems that there is a lot of HF pumped away.\"}]}]","bbox":[{"panel_id":"b","x":0,"y":428,"width":1180,"height":396},{"panel_id":"a","x":2,"y":0,"width":1176,"height":375}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1183,"height":878,"image_format":"jpeg","image_sha256":"5a6687e892eacdaf9f3bd2dcf6effb339251bdfd7e234030ea264fe01cc0458d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_27_fig_8.jpg","caption":"FIG. 8. AFM height maps for (a) the as-deposited $43 \\text{nm}$ thick GaN film and (b) after $25 \\text{nm}$ ALE at $300^{\\circ} \\text{C}$ using the standard recipe shown in Fig. 2.","id":"train/atomic-layer-etching/simulation-usecase/27/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/27/fig_8","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"AFM height map (1×1 μm²) of the as-deposited 43 nm GaN film showing a rough surface with distinct crystalline grains. Height variations span approximately ±6 nm, with sharp peaks and valleys indicating polycrystalline morphology. RMS roughness is 2.6 ± 0.1 nm.\"},{\"panel_id\":\"b\",\"text\":\"AFM height map (1×1 μm²) of the same GaN film after 25 nm of ALE at 300°C. The surface appears visibly smoother with reduced crystallite height and density. RMS roughness decreased to 1.9 ± 0.1 nm.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The polycrystalline nature of the ALD-grown GaN film, with individual crystalline grains creating peaks and valleys.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1×1 μm².\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Smoother interfaces reduce carrier scattering and improve electron mobility, enhancing final device performance.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE process reduces both the height and density of crystalline surface features. The as-deposited film shows sharp peaks and valleys from polycrystalline GaN grains, while after 25 nm of ALE, the surface becomes visibly smoother with less pronounced height variations. The RMS roughness decreases from 2.6 ± 0.1 nm to 1.9 ± 0.1 nm, demonstrating the smoothing capability of the ALE process.\"}]}]","bbox":[{"panel_id":"a","x":10,"y":6,"width":659,"height":550},{"panel_id":"b","x":734,"y":5,"width":670,"height":550}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":1409,"height":558,"image_format":"jpeg","image_sha256":"2aa78269da3bea22388a12b61ba09bfeb8ce723ef9797dd9276bb9a8033f4c79","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_8_fig_8.jpg","caption":"FIG. 8. AFM height maps for (a) the as-deposited $43 \\text{nm}$ thick GaN film and (b) after $25 \\text{nm}$ ALE at $300^{\\circ} \\text{C}$ using the standard recipe shown in Fig. 2.","id":"train/atomic-layer-etching/simulation-usecase/8/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/8/fig_8","subset":"heatmap","split":"train","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows an AFM image with a color gradient indicating height in nanometers. The x-axis represents the horizontal position in micrometers, and the y-axis represents the vertical position in micrometers.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows an AFM with a color gradient indicating height in nanometers. The x-axis represents the horizontal position in micrometers, and the y-axis represents the vertical position in micrometers.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface shows less extremes (high and low points), in addition the figure looks a bit more blurry. This indicates that the surface is less rough.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, there are still high spots present.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The biggest height difference is around 13 nm, these can be called pinholes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In most cases etching process are more affective on upstanding features, resulting in the reduction of extreme height differences.\"}]}]","bbox":[{"panel_id":"b","x":707,"y":3,"width":696,"height":555},{"panel_id":"a","x":3,"y":3,"width":703,"height":552}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/Isotropic atomic layer etching of GaN using SF6 plasma and AI(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1409,"height":558,"image_format":"jpeg","image_sha256":"2aa78269da3bea22388a12b61ba09bfeb8ce723ef9797dd9276bb9a8033f4c79","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/image-panel/test/metadata.jsonl b/subsets/image-panel/test/metadata.jsonl index 04d190f975870c15277be3fdc5475554e47c044e..88fee1d4a696d2e3d8f6328980178b48df782b04 100644 --- a/subsets/image-panel/test/metadata.jsonl +++ b/subsets/image-panel/test/metadata.jsonl @@ -1,29 +1,29 @@ -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_7.jpg","caption":"Figure 7. AFM image $(10\\times 10\\mu \\mathrm{m}^2)$ used to determine the thickness of an $\\mathrm{Al}_2\\mathrm{O}_3$ ALD film grown at $58^{\\circ}C$ using 300 ALD cycles on a Si(100) substrate. The step was created by masking part of the sample with aluminum tape during $\\mathrm{Al}_2\\mathrm{O}_3$ ALD. The average step height is $43~\\mathrm{nm}$ .","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_7","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":645,"height":453,"image_format":"jpeg","image_sha256":"bde8cfd4fbf76030f7e683b590d931bcea2ed0e82a3d6877d84d0bdbf0ba01e4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":645,"height":453}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_17.jpg","caption":"FIG. 17. Cross-sectional high-resolution transmission electron microscopy (HRTEM) images of as-grown $\\mathrm{HfO_2}$ films deposited by (a) remote-plasma ALD and (b) direct-plasma ALD (Refs. 124, 125). The films were deposited on Si at a deposition temperature of $250^{\\circ}\\mathrm{C}$ using $\\mathrm{Hf(NEt_2)_4}$ as the precursor and an $\\mathrm{O_2}$ plasma as the reactant. A gradual transition from the interface layer to the $\\mathrm{HfO_2}$ layer can be observed for the remote-plasma ALD film, whereas the film deposited using a direct-plasma also has an abrupt transition. The film deposited using a direct-plasma was partially crystallized, whereas using a remote-plasma afforded an amorphous film. From J. Kim et al., Appl. Phys. Lett. 87, 53108 (2005). Reprinted with permission. Copyright 2005, American Institute of Physics.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_17","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_17","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_17.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_17.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":803,"height":275,"image_format":"jpeg","image_sha256":"49c5d7d052e263159dda78340cb5990ae4d28afd5964bdef6d2abcf5e9723497","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":388,"height":275},{"panel_id":"b","x":430,"y":0,"width":373,"height":275}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_15_fig_3.jpg","caption":"FIG. 3. AFM images of surface morphology for (a) $700^{\\circ}\\mathrm{C}$ annealed $\\mathrm{TiO_2 / Si}$ b $800^{\\circ}\\mathrm{C}$ annealed $\\mathrm{Ta}_2\\mathrm{O}_5 / \\mathrm{Si}$ cBST $\\mathrm{TiO_2 / Si}$ and d $\\mathrm{BST / Ta}_2\\mathrm{O}_5 / \\mathrm{Si}$ structures.","id":"test/atomic-layer-deposition/experimental-usecase/15/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/15/fig_3","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/Il-Doo Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":672,"height":645,"image_format":"jpeg","image_sha256":"629839dcb9eee9f1871ffdbe3a4b1ae8f96840661bc25474eb006d0302d865c7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":8,"width":321,"height":315},{"panel_id":"b","x":352,"y":3,"width":318,"height":321},{"panel_id":"c","x":2,"y":328,"width":335,"height":327},{"panel_id":"d","x":338,"y":328,"width":327,"height":314}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_19_fig_3.jpg","caption":"Fig. 3 Representative scanning electron microscope images of $\\mathrm{ZrO_2}$ thin films from $(\\mathrm{CpMe})_2\\mathrm{Zr(OMe)Me / O_3}$ and $(\\mathrm{CpMe})_2\\mathrm{ZrMe}_2 / \\mathrm{O}_3$ grown into deep trenches with aspect ratio $\\sim 60:1$ . The upper images show the top part of the trenches (opening diameter $115~\\mathrm{nm}$ ), those below the middle and the bottom parts to a depth of $6.75\\mu \\mathrm{m}$ . $\\mathrm{ZrO_2}$ film thicknesses are denoted by labels.","id":"test/atomic-layer-deposition/experimental-usecase/19/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/19/fig_3","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/Jaakko Niinisto et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":653,"height":680,"image_format":"jpeg","image_sha256":"7887aae7876fbb42f3f72031ab37db4beeed380f074ae5390e4a08400a51d5b4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":4,"width":317,"height":674},{"panel_id":"b","x":332,"y":1,"width":317,"height":677}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_19_fig_4.jpg","caption":"Fig. 4 Transmission electron microscopy images of $\\mathrm{ZrO_2}$ thin films grown from $(\\mathrm{CpMe})_2\\mathrm{Zr(OMe)Me}$ and $(\\mathrm{CpMe})_2\\mathrm{ZrMe}_2$ . Growth temperatures and the number of deposition cycles are indicated by labels. Interface layer is denoted by IL.","id":"test/atomic-layer-deposition/experimental-usecase/19/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/19/fig_4","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/Jaakko Niinisto et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":514,"height":778,"image_format":"jpeg","image_sha256":"ddfb0a636bbe4fe1bad903b61b32425ce80b1df3afe6504e0caded546f4a2141","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":511,"height":387},{"panel_id":"b","x":0,"y":393,"width":513,"height":378}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_20_fig_9.jpg","caption":"Fig. 9 AFM images of a $100\\mathrm{-nm}$ thick LLT film deposited at $225^{\\circ}\\mathrm{C}$ on silicon.","id":"test/atomic-layer-deposition/experimental-usecase/20/fig_9","sample_id":"atomic-layer-deposition/experimental-usecase/20/fig_9","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/Titta Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":658,"height":325,"image_format":"jpeg","image_sha256":"65a42f0243f678863dfe2010e686683b65336fd4a248a062bfb72db1ea20dc9e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":658,"height":325}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_21_fig_8.jpg","caption":"Fig. 8 (a) High resolution SEM pictures showing the surface topography and (b) cross-section of $\\mathrm{Li_2CO_3}$ deposited with plasma ALD at 50, 150, and $250^{\\circ}\\mathrm{C}$ . The scale bar applies to all of the pictures.","id":"test/atomic-layer-deposition/experimental-usecase/21/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/21/fig_8","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/N. Hornsveld et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1056,"height":519,"image_format":"jpeg","image_sha256":"60d402b6286fa8629ba83b56f8b87de0fa01a1cafa6ab7d04155f7c721279048","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":10,"width":1041,"height":267},{"panel_id":"b","x":6,"y":288,"width":1052,"height":230}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a series of microscopic images at different temperatures (50°C, 150°C, 250°C) depicting the surface topography\"},{\"panel_id\":\"b\",\"text\":\"The image shows a series of microscopic images at different temperatures (50°C, 150°C, 250°C) and their cross-sectional views\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film growth, and resulting topography, change drastically when increasing temperature.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Although for lower deposition temperatures highly uniform films are formed, at 250 °C, the films show large thickness variations. We expect that this is related to the combustion of organic ligands and the formation of LiOH/Li2O during deposition induced by the O2 plasma.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The scale bar 100 nm applies to all of the SEM images.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_21_fig_9.jpg","caption":"Fig. 9 Examination of the conformality of the $\\mathrm{Li_2CO_3}$ processes at $150^{\\circ}\\mathrm{C}$ . Micropillars of $50\\mu \\mathrm{m}$ high and a diameter of $2\\mu \\mathrm{m}$ are used for this purpose. The pillars are coated with a $30~\\mathrm{nm}$ TiN layer on top of which a $\\sim 50 \\mathrm{nm}$ layer of $\\mathrm{Li_2CO_3}$ was deposited. Images (a), (b) and (c) show the $\\mathrm{Li_2CO_3 / TiN}$ layer at respectively the top, middle and bottom of the pillars. Thickness variations from $40 - 55 \\mathrm{nm}$ (plasma) and $48 - 60 \\mathrm{nm}$ (thermal) were observed. For the thermal process a lithium dosing time of $10 \\mathrm{s}$ was used, whereas for the plasma process the standard dose time of $6 \\mathrm{s}$ was sufficient. The scale bar applies to all of the pictures.","id":"test/atomic-layer-deposition/experimental-usecase/21/fig_9","sample_id":"atomic-layer-deposition/experimental-usecase/21/fig_9","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/N. Hornsveld et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":664,"height":569,"image_format":"jpeg","image_sha256":"263c53e375b48abb78ce0cd45da71e458dfe9f9c1c8ba9351753d48e2b5155a7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":317,"y":5,"width":343,"height":213},{"panel_id":"b","x":322,"y":219,"width":338,"height":162},{"panel_id":"c","x":324,"y":386,"width":335,"height":166}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_23_17b9b95dff68df0574279dda7c6d995da22e32b90f6e350c5910937861c4b996.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/23/17b9b95dff68df0574279dda7c6d995da22e32b90f6e350c5910937861c4b996","sample_id":"atomic-layer-deposition/experimental-usecase/23/17b9b95dff68df0574279dda7c6d995da22e32b90f6e350c5910937861c4b996","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/17b9b95dff68df0574279dda7c6d995da22e32b90f6e350c5910937861c4b996.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/17b9b95dff68df0574279dda7c6d995da22e32b90f6e350c5910937861c4b996.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/David J. Comstock et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"not_found"},"width":353,"height":355,"image_format":"jpeg","image_sha256":"8c21a1d348b635fe95e6b0558d5496b62a2baab8584651e5eb89277ae26d7862","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":353,"height":355}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_23_figure_8.jpg","caption":"Figure 8. SEM images of $800\\mathrm{~\\AA~}$ $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ film deposited onto high-aspect ratio silicon trenches to assess the conformality of the ALD process: (a) overview of trench structure, (b) top corner of trench with $800\\mathrm{~\\AA~}$ $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ thickness, and (c) bottom of trench with $550\\mathrm{~\\AA~}$ $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ thickness.","id":"test/atomic-layer-deposition/experimental-usecase/23/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/23/figure_8","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/David J. Comstock et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1261,"height":414,"image_format":"jpeg","image_sha256":"5667fd38f04db6669fc4eb27fb85254c17db150f5f302befc2debf5055463c8e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":11,"y":6,"width":406,"height":402},{"panel_id":"b","x":431,"y":8,"width":406,"height":402},{"panel_id":"c","x":853,"y":9,"width":405,"height":398}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_3_0d619d4b2e66f983e387503b137a3a021737824030560f6eefa59784c84a2c25.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/3/0d619d4b2e66f983e387503b137a3a021737824030560f6eefa59784c84a2c25","sample_id":"atomic-layer-deposition/experimental-usecase/3/0d619d4b2e66f983e387503b137a3a021737824030560f6eefa59784c84a2c25","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/0d619d4b2e66f983e387503b137a3a021737824030560f6eefa59784c84a2c25.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/0d619d4b2e66f983e387503b137a3a021737824030560f6eefa59784c84a2c25.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/Hausmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"not_found"},"width":664,"height":1061,"image_format":"jpeg","image_sha256":"6c05840d1a5de6312ad296f565a896682aba2f4981e824aa77921942a8879cc2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":5,"width":658,"height":482},{"panel_id":"b","x":3,"y":500,"width":656,"height":560}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_3_figure_4.jpg","caption":"Figure 4. SEM images of uncoated (left) and coated (right) high-aspect-ratio holes. The white bar in the bottom of each image measures $100~\\mathrm{nm}$","id":"test/atomic-layer-deposition/experimental-usecase/3/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/3/figure_4","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/Hausmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1120,"height":827,"image_format":"jpeg","image_sha256":"3e3c428fa7b22bb930c63585099c0ff507fd75a22d654c7085ff478af9ababc9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1120,"height":827}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_48_fig_5.jpg","caption":"FIG. 5. (Color online) (a) Cross-sectional TEM image of a $\\sim 32\\mathrm{nm}\\mathrm{HfO}_2$ film deposited at $400^{\\circ}\\mathrm{C}$ on a H-terminated Si substrate. The $\\mathrm{Si / HfO_2}$ $(32\\mathrm{nm}) / \\mathrm{SiO_x}$ $(\\sim 100\\mathrm{nm})$ stack demonstrating a sharp interface between $\\mathrm{HfO_2}$ and underlying Si has been highlighted within a square. (b) A close up of the cross-sectional TEM image clearly showing the individual crystalline grains of $\\mathrm{HfO_2}$ and an amorphous $\\mathrm{SiO_2}$ layer at the $\\mathrm{Si - HfO_2}$ interface.","id":"test/atomic-layer-deposition/experimental-usecase/48/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/48/fig_5","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/Sharma et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"48","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":994,"height":489,"image_format":"jpeg","image_sha256":"0efc796eae1e5752e7f112b2a383e169149398f2baa82bc3b97670e83c171396","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":994,"height":489}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_48_fig_7.jpg","caption":"FIG. 7. (Color online) (Left) Cross-sectional transmission electron microscopy image of a conformal $\\mathrm{HfO_2}$ layer deposited on high aspect ratio nanostructures by ALD at $250^{\\circ}\\mathrm{C}$ using $\\mathrm{HfCp(NMe_2)_3}$ and $\\mathrm{O_2}$ plasma. (Right) A close up of trench structures with varying aspect ratios shows the conformal $\\mathrm{HfO_2}$ thin film.","id":"test/atomic-layer-deposition/experimental-usecase/48/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/48/fig_7","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/Sharma et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"48","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":994,"height":350,"image_format":"jpeg","image_sha256":"dc009e92129f8efa03a7663cd11092a4a2dec0ea80f7b68f897e62f417b07703","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":994,"height":350}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_6_fig_8.jpg","caption":"FIG. 8. SEM images of a $46\\mathrm{nm}$ $\\mathrm{SnO_x}$ film deposited on $\\mathrm{Si(100)}$ at $150^{\\circ}\\mathrm{C}$ (a) as-deposited; (b) post- $500^{\\circ}\\mathrm{C}$ anneal; (c) post- $600^{\\circ}\\mathrm{C}$ anneal; (d) cross-section of film post- $600^{\\circ}\\mathrm{C}$ anneal. The scale bars are $300\\mathrm{nm}$ .","id":"test/atomic-layer-deposition/experimental-usecase/6/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/6/fig_8","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/Mullings et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":677,"height":562,"image_format":"jpeg","image_sha256":"056fdfbf4a3ae127eb22e91906c83f8820fd68b755c1cebe6dfdac1ce847cd7a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":7,"width":318,"height":275},{"panel_id":"b","x":342,"y":11,"width":332,"height":271},{"panel_id":"c","x":4,"y":299,"width":318,"height":260},{"panel_id":"d","x":345,"y":301,"width":331,"height":260}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_61_figure_5.jpg","caption":"Figure 5. (a,b) Cross-sectional TEM images of a Co film deposited by performing 1000 ALD cycles of the $\\mathrm{AB - NH_3}$ process.","id":"test/atomic-layer-deposition/experimental-usecase/61/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/61/figure_5","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/Vos et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"61","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":475,"height":470,"image_format":"jpeg","image_sha256":"b508e24892a48fc210d7c0fea1b1a1ae328847ae1f09afdf466c8ed9e4786f6d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":5,"width":469,"height":139},{"panel_id":"b","x":5,"y":154,"width":469,"height":314}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_22_figure_4.jpg","caption":"Figure 4. RSA simulation results for aniline adsorption on $\\left(\\mathbf{a} - \\mathbf{c}\\right)$ $\\mathrm{Ru(0001)}$ and $(\\mathrm{d} - \\mathrm{f})$ $\\mathrm{Co(0001)}$ surfaces: (a and d) visual simulation output, (b and e) surface aniline configuration densities as a function of the total aniline density on the surface, and (c and f) distribution of effective gap sizes after aniline adsorption. The blue dashed line at $0.49 \\mathrm{nm}$ represents the size of the TDMAT precursor. The inset in panel c shows the procedure of determining the gap sizes by measuring the minimum distance between an unoccupied site and the nearest adsorbed inhibitor molecules (i.e., the radius of the largest circular molecule that can adsorb on the unoccupied site).","id":"test/atomic-layer-deposition/simulation-usecase/22/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/22/figure_4","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"bar chart"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"line chart"},{"panel_id":"f","label":"bar chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/I. Tezsevin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1167,"height":727,"image_format":"jpeg","image_sha256":"b7c669a589d92fd26d8172fcb1edb07a70e8ac6c217d81740e3cfe4263ce53da","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":11,"y":10,"width":380,"height":304},{"panel_id":"b","x":412,"y":0,"width":360,"height":354},{"panel_id":"c","x":800,"y":0,"width":367,"height":353},{"panel_id":"d","x":11,"y":380,"width":378,"height":312},{"panel_id":"e","x":412,"y":385,"width":362,"height":342},{"panel_id":"f","x":801,"y":384,"width":366,"height":343}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows a visual RSA simulation snapshot of aniline molecules adsorbed on Ru(0001). Horizontal and vertical configurations populate the surface, illustrating steric blocking and coverage patterns as packing approaches saturation.\"},{\"panel_id\":\"b\",\"text\":\"plots horizontal, vertical, and total aniline configuration densities as a function of attempted total density. Ru shows high achievable coverage, with a saturation point near ~1.8 nm⁻². Horizontal adsorption becomes dominant at high densities.\"},{\"panel_id\":\"c\",\"text\":\"displays a histogram of effective gap sizes remaining after aniline adsorption. Ru leaves only very small gaps (<0.25 nm), far below the required TDMAT precursor radius (0.49 nm), indicating strong inhibition capability. The inset illustrates how gap sizes are measured.\"},{\"panel_id\":\"d\",\"text\":\"shows RSA adsorption on Co(0001). The packing is visibly less dense than Ru, with more irregular spacing and larger void areas.\"},{\"panel_id\":\"e\",\"text\":\"indicates lower total achievable density than Ru. Horizontal coverage rises but saturates earlier, suggesting less efficient packing and weaker inhibitor blocking.\"},{\"panel_id\":\"f\",\"text\":\"shows much larger residual gaps on Co compared to Ru. Some gaps approach or exceed the TDMAT radius, meaning TDMAT could still adsorb through voids—indicating poorer blocking performance.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Total density (nm²) | Configuration density (nm²) |\\n|---|---|\\n| 0.0 | 0.0 |\\n| 0.2 | 0.2 |\\n| 0.4 | 0.4 |\\n| 0.6 | 0.6 |\\n| 0.8 | 0.8 |\\n| 1.0 | 1.0 |\\n| 1.2 | 1.2 |\\n| 1.4 | 1.4 |\\n| 1.6 | 1.6 |\\n| 1.8 | 1.8 |\\n| 2.0 | 2.0 |\"},{\"panel_id\":\"c\",\"text\":\"| Effective gap size (nm) | Surface density (nm⁻²) |\\n|---|---|\\n| 0.20 | 0.07 |\\n| 0.25 | 0.03 |\\n| 0.30 | 0.01 |\\n| 0.35 | 0.00 |\\n| 0.40 | 0.00 |\\n| 0.45 | 0.00 |\\n| 0.50 | 0.00 |\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"| Total density (nm²) | Configuration density (nm²) |\\n|---|---|\\n| 0.0 | 0.0 |\\n| 0.2 | 0.2 |\\n| 0.4 | 0.4 |\\n| 0.6 | 0.6 |\\n| 0.8 | 0.8 |\\n| 1.0 | 1.0 |\\n| 1.2 | 1.2 |\\n| 1.4 | 1.4 |\\n| 1.6 | 1.6 |\\n| 1.8 | 1.8 |\\n| 2.0 | 2.0 |\"},{\"panel_id\":\"f\",\"text\":\"| Effective gap size (nm) | Surface density (nm⁻²) |\\n|---|---|\\n| 0.20 | 0.09 |\\n| 0.25 | 0.01 |\\n| 0.30 | 0.00 |\\n| 0.35 | 0.00 |\\n| 0.40 | 0.00 |\\n| 0.45 | 0.00 |\\n| 0.50 | 0.00 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The gap-size distribution quantifies the openings left between adsorbed inhibitor molecules. If these gaps are smaller than the critical precursor radius, the precursor cannot reach the metal surface and adsorption is blocked. Ru shows mostly sub-0.25 nm gaps, far below the TDMAT effective radius, indicating strong growth inhibition. Co exhibits larger gaps, meaning the precursor may still access the surface, reducing selectivity. Thus, gap statistics directly determine how effectively an inhibitor layer prevents undesired precursor adsorption.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ru achieves the higher packing density.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes — RSA places molecules one by one and stops once further insertions are sterically blocked.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Molecular orientation (horizontal vs. vertical), Packing efficiency of adsorbed molecules, Surface-dependent steric constraints, Local arrangement of nearest-neighbor molecules, Minimum distance rules used in RSA gap-size calculations\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_33_figure_2.jpg","caption":"Figure 2. SEM and AFM images showing the $\\mathrm{Al}_2\\mathrm{O}_3$ coverage on graphene after 100 cycles of $\\mathrm{Al}_2\\mathrm{O}_3$ ALD at $100^{\\circ}\\mathrm{C}$ for $\\mathbf{a},\\mathbf{d}$ pristine, $\\mathbf{b},\\mathbf{e}$ $30~\\mathrm{s}~\\mathrm{O}_2$ plasma, and $\\mathbb{C},\\mathbb{f})$ $35~\\mathrm{s}~\\mathrm{H}_2$ plasma treated graphene. The root-mean-square (RMS) roughness determined from the AFM measurements is indicated as well.","id":"test/atomic-layer-deposition/simulation-usecase/33/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/33/figure_2","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":889,"height":575,"image_format":"jpeg","image_sha256":"7cd4023741fed0ea3a84a98f5349a4f2de2a4c5977f580f0a68aec9e02e5a525","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":292,"height":219},{"panel_id":"b","x":307,"y":0,"width":285,"height":218},{"panel_id":"c","x":607,"y":0,"width":282,"height":218},{"panel_id":"d","x":0,"y":241,"width":291,"height":334},{"panel_id":"e","x":307,"y":241,"width":285,"height":334},{"panel_id":"f","x":607,"y":240,"width":282,"height":335}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"SEM image after 100 cycles of Al2O3 ALD on pristine graphene, showing non uniform coverage with visible holes and a granular film texture.\"},{\"panel_id\":\"b\",\"text\":\"SEM image after 100 cycles of Al2O3 ALD on graphene treated with 30 s O2 plasma, showing uniform Al2O3 coverage without visible pinholes.\"},{\"panel_id\":\"c\",\"text\":\"SEM image after 100 cycles of Al2O3 ALD on graphene treated with 35 s H2 plasma, showing uniform Al2O3 coverage without visible pinholes.\"},{\"panel_id\":\"d\",\"text\":\"AFM height image after 100 cycles of Al2O3 ALD on pristine graphene, showing a rough granular surface with RMS roughness 1.9 nm.\"},{\"panel_id\":\"e\",\"text\":\"AFM height image after 100 cycles of Al2O3 ALD on 30 s O2 plasma treated graphene, showing a smooth surface with RMS roughness 0.39 nm.\"},{\"panel_id\":\"f\",\"text\":\"AFM height image after 100 cycles of Al2O3 ALD on 35 s H2 plasma treated graphene, showing a smooth surface with RMS roughness 0.45 nm.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The much lower roughness for the O2 and H2 plasma treated samples is consistent with a closed, more continuous Al2O3 layer forming during ALD. The paper links this to plasma created surface groups that increase adsorption of the ALD precursor on graphene, which reduces the nucleation delay and improves coverage. In contrast, pristine graphene lacks sufficient adsorption sites, so nucleation is sparse and the film remains granular with holes.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It indicates that the white bar corresponds to a lateral distance of 200 nm in the image.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A closed Al2O3 layer is required if the film is to act as an effective dielectric and barrier layer on graphene. The figure shows that without pretreatment the Al2O3 is not closed, which the paper notes is not suitable for applications such as a gate dielectric. With O2 or H2 plasma pretreatment, the uniform and smooth Al2O3 indicates a much more viable dielectric layer for device integration.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Pristine graphene: non uniform growth with holes and a granular structure, and higher RMS roughness around 1.9 nm. \\n\\nO2 plasma and H2 plasma: uniform deposition with no visible pinholes, and much lower RMS roughness around 0.39 nm and 0.45 nm.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_33_figure_3.jpg","caption":"Figure 3. Cross-sectional TEM image of 100 cycles of $\\mathrm{Al}_2\\mathrm{O}_3$ deposited on graphene treated with $35~\\mathrm{s}$ $\\mathrm{H}_{2}$ plasma. The $\\mathrm{Al}_2\\mathrm{O}_3$ layer is $7.8\\pm 0.4$ nm thick and pinhole-free.","id":"test/atomic-layer-deposition/simulation-usecase/33/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/33/figure_3","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":281,"height":244,"image_format":"jpeg","image_sha256":"31c17284742161d890aa87160d0934b9326ac5f1f1e3425b076b1274176ea2df","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":281,"height":244}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Cross section TEM image of a Au capped Al2O3 graphene SiO2 stack after 100 cycles of Al2O3 ALD on graphene treated with 35 s H2 plasma, showing a uniform Al2O3 layer that is 7.8 ± 0.4 nm thick and described as pinhole free.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It corresponds to graphene treated with 35 s H2 plasma followed by 100 cycles of Al2O3 ALD.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TEM cross section gives an Al2O3 thickness of 7.8 ± 0.4 nm. The paper reports a thickness of 9 ± 1 nm from spectroscopic ellipsometry for Al2O3 grown on H2 plasma treated graphene, and states that the TEM value is in agreement with the ellipsometry thickness within uncertainty.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Au\\n\\n, Al2O3\\n\\n, Graphene\\n\\n, SiO2\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A uniform, pinhole free Al2O3 film is needed to function as a continuous dielectric and barrier layer rather than leaving exposed graphene regions that can leak or short. This figure is used as confirmation that, after H2 plasma functionalization and 100 ALD cycles, the Al2O3 is closed and continuous, supporting the paper’s goal of enabling practical dielectric integration on graphene.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_34_figure_4.jpg","caption":"Figure 4. a) SEM image of pristine graphene after transfer to $\\mathrm{SiO}_{2}$ and anneal at $400^{\\circ}\\mathrm{C}$ . Wrinkles and bilayer graphene are visible in the image. b) SEM image of pristine graphene after 500 cycles of Pt ALD at $300^{\\circ}\\mathrm{C}$ . Preferential Pt growth occurs on the graphene wrinkles, grain boundaries, and defects sites.","id":"test/atomic-layer-deposition/simulation-usecase/34/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/34/figure_4","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":661,"height":1030,"image_format":"jpeg","image_sha256":"80e86d72de8a8a9d00f81e37d96a3021ee72eac0365485a728731a52b78428db","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":11,"width":654,"height":485},{"panel_id":"b","x":4,"y":540,"width":654,"height":483}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_34_figure_5.jpg","caption":"Figure 5. SEM image of graphene exposed to different plasma treatments followed by 500 cycles of Pt ALD: a) $\\mathsf{H}_{2}$ plasma 2 min, b) $\\mathsf{H}_{2}$ Plasma 4 min, c) $\\mathsf{H}_{2}$ Plasma 5 min, d) $\\Omega_{2}$ plasma 1 min, e) $\\Omega_{2}$ plasma 3 min, and f) $\\Omega_{2}$ plasma 5 min. The Pt surface coverage increases as a function of the plasma exposure time for both $\\mathsf{H}_{2}$ and $\\Omega_{2}$ plasma treatments. d-f) Adapted with permission.[19] Copyright 2016, Royal Society of Chemistry.","id":"test/atomic-layer-deposition/simulation-usecase/34/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/34/figure_5","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1167,"height":587,"image_format":"jpeg","image_sha256":"cb948f95201f0df88ace1dc63eaa49303c9ba1b0972f49073db8e3aa0bbbe941","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":11,"y":15,"width":365,"height":274},{"panel_id":"b","x":404,"y":14,"width":366,"height":272},{"panel_id":"c","x":797,"y":15,"width":368,"height":269},{"panel_id":"d","x":7,"y":315,"width":366,"height":269},{"panel_id":"e","x":402,"y":311,"width":368,"height":272},{"panel_id":"f","x":795,"y":313,"width":366,"height":267}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_34_figure_6.jpg","caption":"Figure 6. Optical micrograph of a), c) graphene patterned with CTLM structures by photolithography using photosensitive polyimide as the resist and the same structures b), d) after $5\\min$ of $\\mathsf{H}_{2}$ plasma functionalization and 1000 cycles of Pt ALD. No Pt growth occurs on the polyimide allowing for the AS-ALD of Pt. The parameters of Equation (1) are indicated in d) as well.","id":"test/atomic-layer-deposition/simulation-usecase/34/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/34/figure_6","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":664,"height":597,"image_format":"jpeg","image_sha256":"6f21a5bb2f56154bd217b90a34cf4a327c7eaf3994e945cb80aa41ea1e97001e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":327,"height":310},{"panel_id":"b","x":333,"y":4,"width":327,"height":306},{"panel_id":"c","x":5,"y":325,"width":329,"height":268},{"panel_id":"d","x":336,"y":325,"width":324,"height":269}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_12_fig_5.jpg","caption":"FIG. 5. Cross-sectional TEM images of $\\mathrm{Al_2O_3}$ deposited and etched on 3D Si trench structures. (a) Trench structure coated with an $\\mathrm{Al_2O_3}$ film by plasma ALD, showing average film thickness in four regions. (b) A similar trench structure after 40 ALE cycles, in which the thickness etched in each region is highlighted. The standard ALE cycle was used to perform the etching.","id":"test/atomic-layer-etching/experimental-usecase/12/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/12/fig_5","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":586,"height":481,"image_format":"jpeg","image_sha256":"2a0aa1428df1dc686c420392ed4dfdfcc73c749b30cafee6562363b30891b637","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":8,"width":291,"height":469},{"panel_id":"b","x":299,"y":10,"width":285,"height":468}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a cross-sectional view of the material structure before etching, displaying the average film thickness in four sections.\"},{\"panel_id\":\"b\",\"text\":\"The image shows a cross-sectional view of the material structure after 40 cycles of ALE (Atomic Layer Etching), displaying changes in film thickness for four regions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Isotropic atomic layer etching\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"11.6 nm (corresponds to the difference between 23.3 nm and 11.9 nm).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thickness decreases after 40 cycles of atomic layer etching (ALE).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The EPC is around 12/40 = 0.3 nm/cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Especially ions within a plasma are directionall meaning that side walls in 3D structures have a lower ion dose meaning that the method is not conformal.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Al₂O₃ is removed with exceptional uniformity across the entire trench. The etched thickness ranges from ~10.4 to ~11.4 nm between the top, sidewalls, and bottom. This corresponds to a variation of less than ±5 %, demonstrating that both ALE half-reactions fully saturate all surfaces independent of aspect ratio.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~2.66 Å/cycle in the trench versus ~3.1 Å/cycle on blanket films.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The average etch rate over the 3D trench structures was calculated to be 2.9 ± 0.1 Å/cycle, which agrees well with the Etch Per Cycle (EPC) value obtained for blanket substrates.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"40 cycles of alternating SF₆ plasma and TMA pulses.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Average thickness of Al2O3 before etching = 22.6 nm\\n2. Average thickness of Al2O3 after 40 cycles of etching = 11.6nm\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Etched thickness = 11nm, Etch rate = 11/40 = - 0.28 nm/ALE cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sidewall thickness decreases significantly after 40 ALE cycles. Pre-etch measurements ranged from 21.6 nm to 23.3 nm, while post-etch values range from 11.2 nm to 12.2 nm. This consistent reduction across the measured points suggests uniform and controlled material removal via ALE.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Pre-ALE (plasma ALD): 21.8 nm, 23.3 nm, 22.6 nm, 21.6 nm, Post 40 ALE cycles: 11.4 nm, 11.9 nm, 12.2 nm, 11.2 nm, Observation: The etch depth is relatively consistent across regions, indicating isotropic etching\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The similar etch depth across different surfaces indicates that the ALE process is isotropic, meaning it does not depend strongly on the orientation of the surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Achieving isotropic etching ensures uniform material removal across complex 3D geometries, which is critical for maintaining structural integrity and predictable etch rates in microfabrication and semiconductor applications.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Not all measurements along the trench show the same thickness where the biggest difference is 1.7 nm, so not fully conformal.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The main reason for this difference is the different densities of the materials.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thickness variation is less than ±0.85 nm from top to bottom of the trench.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The comparison demonstrates that the process is highly isotropic. In the pre-etch image (a), the film is conformal with a thickness of ~22 nm. After 40 cycles (b), the thickness is reduced to ~11–12 nm on both the horizontal surfaces (top/bottom) and the vertical sidewalls. The fact that the amount of material removed (~10–11 nm) is virtually identical on all faces confirms that the plasma-generated radicals etch all exposed surfaces equally, unlike ion-driven plasma processes which are typically directional.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This plasma ALE process exhibits a comparable etch depth for both horizontal and vertical surfaces of 11.4 nm and 11. 9 nm, respectively. \\nAnisotropic etching would lead to a higher etch rate on horizontal surfaces. This suggests that directional ions in the SF6 plasma do not significantly contribute to etching of the Al2O3 surface. A possible explanation for why the etch rate on the horizontal surfaces appears slightly lower than that on the vertical surfaces is densification of the film due to ion exposure during the O2 plasma steps of the Al2O3 ALD cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Plasma-enhanced atomic layer etching (ALE) using SF₆ plasma and TMA exposure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Etch rate, Uniformity, Precision, Material selectivity\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Al2O3 film was first deposited on the Si trench structures using plasma ALD with TMA and O2 plasma, resulting in a uniform thickness of ~210 Å. Subsequently, the film was etched using 40 ALE cycles, which alternated SF6 plasma exposure with TMA dosing. This process led to a uniform etch across horizontal and vertical surfaces, demonstrating the isotropic nature of the ALE process.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_18_fig_8.jpg","caption":"FIG. 8. TEM cross sections of a $4 \\times 50 \\mathrm{nm}$ InGaAs nanowire covered by $4.7 \\mathrm{nm}$ ALD-grown $\\mathrm{Al}_2\\mathrm{O}_3$ and $20 \\mathrm{nm}$ of ALD tungsten. Reprinted with permission from Lu et al., in International Electron Devices Meeting, San Francisco, 1-5 December 2018 (IEDM, Montgomery Village, 2018), p. 895. Copyright 2018, IEEE.","id":"test/atomic-layer-etching/experimental-usecase/18/fig_8","sample_id":"atomic-layer-etching/experimental-usecase/18/fig_8","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":667,"height":406,"image_format":"jpeg","image_sha256":"30663a1ececfacb558c60061d01e2c009ff6a13d27ca7a63ac8ee9641ad01f2e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":7,"width":408,"height":397},{"panel_id":"b","x":414,"y":6,"width":246,"height":396}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_37_fig_10.jpg","caption":"FIG. 10. (a) Cross-sectional TEM and (b) TEM-EDS mapping of 10 ALD/ALE super-cycles at $270~\\mathrm{ms}$ dosing conditions on $\\mathrm{Si / SiO_2}$ pattern. (c) Cross-sectional TEM and (d) TEM-EDS mapping of 30 ALD/ALE super-cycles at $90~\\mathrm{ms}$ dosing conditions on $\\mathrm{Si / SiO_2}$ pattern.","id":"test/atomic-layer-etching/experimental-usecase/37/fig_10","sample_id":"atomic-layer-etching/experimental-usecase/37/fig_10","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/Effect of reactant dosing on selectivity during area-selective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1272,"height":714,"image_format":"jpeg","image_sha256":"229e18d831233a9ba87b4eaa0e258e091339730c06fe291443cce97070957d41","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":9,"width":624,"height":348},{"panel_id":"b","x":645,"y":12,"width":619,"height":343},{"panel_id":"c","x":10,"y":364,"width":623,"height":347},{"panel_id":"d","x":643,"y":369,"width":621,"height":340}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_37_fig_9.jpg","caption":"FIG. 9. SEM images of $\\mathrm{TiO_2}$ ALD/ALE on patterned $\\mathrm{Si / SiO_2}$ substrates using (a) $270~\\mathrm{ms}$ dosing conditions for 10 super-cycles and (b) $90~\\mathrm{ms}$ dosing conditions for 30 super-cycles.","id":"test/atomic-layer-etching/experimental-usecase/37/fig_9","sample_id":"atomic-layer-etching/experimental-usecase/37/fig_9","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/Effect of reactant dosing on selectivity during area-selective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":487,"height":647,"image_format":"jpeg","image_sha256":"663e5b277cd7067f46770e86d8aeaf522695d92e2baa0035e1e7640a9b1164cd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":5,"width":470,"height":314},{"panel_id":"b","x":11,"y":332,"width":469,"height":309}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG11.jpg","caption":"FIG. 11. SEM image of (a) the film left over from fully etched Mo films (after 1000 cycles of $\\mathrm{NbCl}_5$ and $\\mathrm{O}_2$ at $300^{\\circ}\\mathrm{C}$ ) and (b) after cleaning the sample with $\\mathrm{O}_3$ at $300^{\\circ}\\mathrm{C}$ . AFM images of the fully etched Mo sample (c) before and (d) after cleaning with $\\mathrm{O}_3$ at $300^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-etching/experimental-usecase/47/FIG11","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG11","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1317,"height":890,"image_format":"jpeg","image_sha256":"a1efd131864d6443e40aab025b51ca40d4affa7f32b4a0aa94ba9cc3947659ef","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":3,"width":650,"height":485},{"panel_id":"b","x":660,"y":9,"width":643,"height":472},{"panel_id":"c","x":118,"y":500,"width":537,"height":380},{"panel_id":"d","x":674,"y":498,"width":528,"height":380}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG9.jpg","caption":"FIG. 9. SEM images of (a) an unetched molybdenum film and (b) a film etched for 200 cycles at $300^{\\circ}\\mathrm{C}$ with a remaining thickness of $41.6\\mathrm{nm}$ .","id":"test/atomic-layer-etching/experimental-usecase/47/FIG9","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG9","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1067,"height":406,"image_format":"jpeg","image_sha256":"5ce75c2152f967c6df5086e4b52d9ca0c7cd8e3360953b90555caae72f90b339","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":4,"width":524,"height":394},{"panel_id":"b","x":543,"y":9,"width":519,"height":392}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_21_figure_7.jpg","caption":"Figure 7. Examples of the ALE smoothing effect. Images show the surface before and after ALE in (a) tilt SEM with Ru ALE, 100 cycles and (b) side-view HR-TEM with Si ALE, 50 cycles.","id":"test/atomic-layer-etching/simulation-usecase/21/figure_7","sample_id":"atomic-layer-etching/simulation-usecase/21/figure_7","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/Review Paper -- Atomic Layer Etching Rethinking the Art of Etch.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":983,"height":497,"image_format":"jpeg","image_sha256":"bc206d7cf07163687fe140e37ed4d6962d8a2e151bc6d1e22e5cce0a3a72343f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":26,"y":5,"width":955,"height":282},{"panel_id":"b","x":38,"y":283,"width":942,"height":210}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The tilt-SEM images show that Ru surface roughness decreases from 0.80 nm to 0.20 nm after 100 ALE cycles, indicating strong planarization under layer-by-layer removal conditions.\"},{\"panel_id\":\"b\",\"text\":\"The side-view HR-TEM images of Si show pronounced smoothing after 50 ALE cycles, with reduced atomic-scale height variations at the surface compared to the incoming interface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Each ALE cycle consists of a self-limiting surface modification step followed by a directional activation step that removes only the modified layer. On Ru, protruding features experience higher reaction probability during modification, making them preferentially removed during activation. Recessed regions remain protected because modification saturates uniformly. Repeating this cycle progressively suppresses height gradients, producing the observed reduction from 0.80 nm to 0.20 nm RMS.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A smoother Ru surface promotes uniform nucleation during subsequent barrier or liner deposition, reducing the likelihood of discontinuities. It also minimizes local electric-field and current-density concentrations that can degrade reliability. As a result, ALE-induced smoothing supports improved manufacturability and performance in advanced interconnect schemes.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50 cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ALE preferentially removes protruding lattice features, producing a more uniform near-surface atomic structure.\"}]}]"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_7.jpg","caption":"Figure 7. AFM image $(10\\times 10\\mu \\mathrm{m}^2)$ used to determine the thickness of an $\\mathrm{Al}_2\\mathrm{O}_3$ ALD film grown at $58^{\\circ}C$ using 300 ALD cycles on a Si(100) substrate. The step was created by masking part of the sample with aluminum tape during $\\mathrm{Al}_2\\mathrm{O}_3$ ALD. The average step height is $43~\\mathrm{nm}$ .","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_7","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":645,"height":453}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":645,"height":453,"image_format":"jpeg","image_sha256":"bde8cfd4fbf76030f7e683b590d931bcea2ed0e82a3d6877d84d0bdbf0ba01e4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_17.jpg","caption":"FIG. 17. Cross-sectional high-resolution transmission electron microscopy (HRTEM) images of as-grown $\\mathrm{HfO_2}$ films deposited by (a) remote-plasma ALD and (b) direct-plasma ALD (Refs. 124, 125). The films were deposited on Si at a deposition temperature of $250^{\\circ}\\mathrm{C}$ using $\\mathrm{Hf(NEt_2)_4}$ as the precursor and an $\\mathrm{O_2}$ plasma as the reactant. A gradual transition from the interface layer to the $\\mathrm{HfO_2}$ layer can be observed for the remote-plasma ALD film, whereas the film deposited using a direct-plasma also has an abrupt transition. The film deposited using a direct-plasma was partially crystallized, whereas using a remote-plasma afforded an amorphous film. From J. Kim et al., Appl. Phys. Lett. 87, 53108 (2005). Reprinted with permission. Copyright 2005, American Institute of Physics.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_17","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_17","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":388,"height":275},{"panel_id":"b","x":430,"y":0,"width":373,"height":275}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_17.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_17.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":803,"height":275,"image_format":"jpeg","image_sha256":"49c5d7d052e263159dda78340cb5990ae4d28afd5964bdef6d2abcf5e9723497","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_15_fig_3.jpg","caption":"FIG. 3. AFM images of surface morphology for (a) $700^{\\circ}\\mathrm{C}$ annealed $\\mathrm{TiO_2 / Si}$ b $800^{\\circ}\\mathrm{C}$ annealed $\\mathrm{Ta}_2\\mathrm{O}_5 / \\mathrm{Si}$ cBST $\\mathrm{TiO_2 / Si}$ and d $\\mathrm{BST / Ta}_2\\mathrm{O}_5 / \\mathrm{Si}$ structures.","id":"test/atomic-layer-deposition/experimental-usecase/15/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/15/fig_3","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":8,"y":8,"width":321,"height":315},{"panel_id":"b","x":352,"y":3,"width":318,"height":321},{"panel_id":"c","x":2,"y":328,"width":335,"height":327},{"panel_id":"d","x":338,"y":328,"width":327,"height":314}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/Il-Doo Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":672,"height":645,"image_format":"jpeg","image_sha256":"629839dcb9eee9f1871ffdbe3a4b1ae8f96840661bc25474eb006d0302d865c7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_19_fig_3.jpg","caption":"Fig. 3 Representative scanning electron microscope images of $\\mathrm{ZrO_2}$ thin films from $(\\mathrm{CpMe})_2\\mathrm{Zr(OMe)Me / O_3}$ and $(\\mathrm{CpMe})_2\\mathrm{ZrMe}_2 / \\mathrm{O}_3$ grown into deep trenches with aspect ratio $\\sim 60:1$ . The upper images show the top part of the trenches (opening diameter $115~\\mathrm{nm}$ ), those below the middle and the bottom parts to a depth of $6.75\\mu \\mathrm{m}$ . $\\mathrm{ZrO_2}$ film thicknesses are denoted by labels.","id":"test/atomic-layer-deposition/experimental-usecase/19/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/19/fig_3","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":4,"width":317,"height":674},{"panel_id":"b","x":332,"y":1,"width":317,"height":677}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/Jaakko Niinisto et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":653,"height":680,"image_format":"jpeg","image_sha256":"7887aae7876fbb42f3f72031ab37db4beeed380f074ae5390e4a08400a51d5b4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_19_fig_4.jpg","caption":"Fig. 4 Transmission electron microscopy images of $\\mathrm{ZrO_2}$ thin films grown from $(\\mathrm{CpMe})_2\\mathrm{Zr(OMe)Me}$ and $(\\mathrm{CpMe})_2\\mathrm{ZrMe}_2$ . Growth temperatures and the number of deposition cycles are indicated by labels. Interface layer is denoted by IL.","id":"test/atomic-layer-deposition/experimental-usecase/19/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/19/fig_4","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":3,"width":511,"height":387},{"panel_id":"b","x":0,"y":393,"width":513,"height":378}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/Jaakko Niinisto et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":514,"height":778,"image_format":"jpeg","image_sha256":"ddfb0a636bbe4fe1bad903b61b32425ce80b1df3afe6504e0caded546f4a2141","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_20_fig_9.jpg","caption":"Fig. 9 AFM images of a $100\\mathrm{-nm}$ thick LLT film deposited at $225^{\\circ}\\mathrm{C}$ on silicon.","id":"test/atomic-layer-deposition/experimental-usecase/20/fig_9","sample_id":"atomic-layer-deposition/experimental-usecase/20/fig_9","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":658,"height":325}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/Titta Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":658,"height":325,"image_format":"jpeg","image_sha256":"65a42f0243f678863dfe2010e686683b65336fd4a248a062bfb72db1ea20dc9e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_21_fig_8.jpg","caption":"Fig. 8 (a) High resolution SEM pictures showing the surface topography and (b) cross-section of $\\mathrm{Li_2CO_3}$ deposited with plasma ALD at 50, 150, and $250^{\\circ}\\mathrm{C}$ . The scale bar applies to all of the pictures.","id":"test/atomic-layer-deposition/experimental-usecase/21/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/21/fig_8","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a series of microscopic images at different temperatures (50°C, 150°C, 250°C) depicting the surface topography\"},{\"panel_id\":\"b\",\"text\":\"The image shows a series of microscopic images at different temperatures (50°C, 150°C, 250°C) and their cross-sectional views\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film growth, and resulting topography, change drastically when increasing temperature.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Although for lower deposition temperatures highly uniform films are formed, at 250 °C, the films show large thickness variations. We expect that this is related to the combustion of organic ligands and the formation of LiOH/Li2O during deposition induced by the O2 plasma.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The scale bar 100 nm applies to all of the SEM images.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":10,"y":10,"width":1041,"height":267},{"panel_id":"b","x":6,"y":288,"width":1052,"height":230}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/N. Hornsveld et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1056,"height":519,"image_format":"jpeg","image_sha256":"60d402b6286fa8629ba83b56f8b87de0fa01a1cafa6ab7d04155f7c721279048","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_21_fig_9.jpg","caption":"Fig. 9 Examination of the conformality of the $\\mathrm{Li_2CO_3}$ processes at $150^{\\circ}\\mathrm{C}$ . Micropillars of $50\\mu \\mathrm{m}$ high and a diameter of $2\\mu \\mathrm{m}$ are used for this purpose. The pillars are coated with a $30~\\mathrm{nm}$ TiN layer on top of which a $\\sim 50 \\mathrm{nm}$ layer of $\\mathrm{Li_2CO_3}$ was deposited. Images (a), (b) and (c) show the $\\mathrm{Li_2CO_3 / TiN}$ layer at respectively the top, middle and bottom of the pillars. Thickness variations from $40 - 55 \\mathrm{nm}$ (plasma) and $48 - 60 \\mathrm{nm}$ (thermal) were observed. For the thermal process a lithium dosing time of $10 \\mathrm{s}$ was used, whereas for the plasma process the standard dose time of $6 \\mathrm{s}$ was sufficient. The scale bar applies to all of the pictures.","id":"test/atomic-layer-deposition/experimental-usecase/21/fig_9","sample_id":"atomic-layer-deposition/experimental-usecase/21/fig_9","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":317,"y":5,"width":343,"height":213},{"panel_id":"b","x":322,"y":219,"width":338,"height":162},{"panel_id":"c","x":324,"y":386,"width":335,"height":166}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/N. Hornsveld et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":664,"height":569,"image_format":"jpeg","image_sha256":"263c53e375b48abb78ce0cd45da71e458dfe9f9c1c8ba9351753d48e2b5155a7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_23_17b9b95dff68df0574279dda7c6d995da22e32b90f6e350c5910937861c4b996.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/23/17b9b95dff68df0574279dda7c6d995da22e32b90f6e350c5910937861c4b996","sample_id":"atomic-layer-deposition/experimental-usecase/23/17b9b95dff68df0574279dda7c6d995da22e32b90f6e350c5910937861c4b996","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":353,"height":355}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/17b9b95dff68df0574279dda7c6d995da22e32b90f6e350c5910937861c4b996.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/17b9b95dff68df0574279dda7c6d995da22e32b90f6e350c5910937861c4b996.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/David J. Comstock et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"not_found"},"width":353,"height":355,"image_format":"jpeg","image_sha256":"8c21a1d348b635fe95e6b0558d5496b62a2baab8584651e5eb89277ae26d7862","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_23_figure_8.jpg","caption":"Figure 8. SEM images of $800\\mathrm{~\\AA~}$ $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ film deposited onto high-aspect ratio silicon trenches to assess the conformality of the ALD process: (a) overview of trench structure, (b) top corner of trench with $800\\mathrm{~\\AA~}$ $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ thickness, and (c) bottom of trench with $550\\mathrm{~\\AA~}$ $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ thickness.","id":"test/atomic-layer-deposition/experimental-usecase/23/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/23/figure_8","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":11,"y":6,"width":406,"height":402},{"panel_id":"b","x":431,"y":8,"width":406,"height":402},{"panel_id":"c","x":853,"y":9,"width":405,"height":398}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/David J. Comstock et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1261,"height":414,"image_format":"jpeg","image_sha256":"5667fd38f04db6669fc4eb27fb85254c17db150f5f302befc2debf5055463c8e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_3_0d619d4b2e66f983e387503b137a3a021737824030560f6eefa59784c84a2c25.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/3/0d619d4b2e66f983e387503b137a3a021737824030560f6eefa59784c84a2c25","sample_id":"atomic-layer-deposition/experimental-usecase/3/0d619d4b2e66f983e387503b137a3a021737824030560f6eefa59784c84a2c25","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":5,"width":658,"height":482},{"panel_id":"b","x":3,"y":500,"width":656,"height":560}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/0d619d4b2e66f983e387503b137a3a021737824030560f6eefa59784c84a2c25.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/0d619d4b2e66f983e387503b137a3a021737824030560f6eefa59784c84a2c25.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/Hausmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"not_found"},"width":664,"height":1061,"image_format":"jpeg","image_sha256":"6c05840d1a5de6312ad296f565a896682aba2f4981e824aa77921942a8879cc2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_3_figure_4.jpg","caption":"Figure 4. SEM images of uncoated (left) and coated (right) high-aspect-ratio holes. The white bar in the bottom of each image measures $100~\\mathrm{nm}$","id":"test/atomic-layer-deposition/experimental-usecase/3/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/3/figure_4","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1120,"height":827}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/Hausmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1120,"height":827,"image_format":"jpeg","image_sha256":"3e3c428fa7b22bb930c63585099c0ff507fd75a22d654c7085ff478af9ababc9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_48_fig_5.jpg","caption":"FIG. 5. (Color online) (a) Cross-sectional TEM image of a $\\sim 32\\mathrm{nm}\\mathrm{HfO}_2$ film deposited at $400^{\\circ}\\mathrm{C}$ on a H-terminated Si substrate. The $\\mathrm{Si / HfO_2}$ $(32\\mathrm{nm}) / \\mathrm{SiO_x}$ $(\\sim 100\\mathrm{nm})$ stack demonstrating a sharp interface between $\\mathrm{HfO_2}$ and underlying Si has been highlighted within a square. (b) A close up of the cross-sectional TEM image clearly showing the individual crystalline grains of $\\mathrm{HfO_2}$ and an amorphous $\\mathrm{SiO_2}$ layer at the $\\mathrm{Si - HfO_2}$ interface.","id":"test/atomic-layer-deposition/experimental-usecase/48/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/48/fig_5","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":994,"height":489}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/Sharma et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"48","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":994,"height":489,"image_format":"jpeg","image_sha256":"0efc796eae1e5752e7f112b2a383e169149398f2baa82bc3b97670e83c171396","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_48_fig_7.jpg","caption":"FIG. 7. (Color online) (Left) Cross-sectional transmission electron microscopy image of a conformal $\\mathrm{HfO_2}$ layer deposited on high aspect ratio nanostructures by ALD at $250^{\\circ}\\mathrm{C}$ using $\\mathrm{HfCp(NMe_2)_3}$ and $\\mathrm{O_2}$ plasma. (Right) A close up of trench structures with varying aspect ratios shows the conformal $\\mathrm{HfO_2}$ thin film.","id":"test/atomic-layer-deposition/experimental-usecase/48/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/48/fig_7","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":994,"height":350}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/Sharma et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"48","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":994,"height":350,"image_format":"jpeg","image_sha256":"dc009e92129f8efa03a7663cd11092a4a2dec0ea80f7b68f897e62f417b07703","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_6_fig_8.jpg","caption":"FIG. 8. SEM images of a $46\\mathrm{nm}$ $\\mathrm{SnO_x}$ film deposited on $\\mathrm{Si(100)}$ at $150^{\\circ}\\mathrm{C}$ (a) as-deposited; (b) post- $500^{\\circ}\\mathrm{C}$ anneal; (c) post- $600^{\\circ}\\mathrm{C}$ anneal; (d) cross-section of film post- $600^{\\circ}\\mathrm{C}$ anneal. The scale bars are $300\\mathrm{nm}$ .","id":"test/atomic-layer-deposition/experimental-usecase/6/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/6/fig_8","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":7,"width":318,"height":275},{"panel_id":"b","x":342,"y":11,"width":332,"height":271},{"panel_id":"c","x":4,"y":299,"width":318,"height":260},{"panel_id":"d","x":345,"y":301,"width":331,"height":260}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/Mullings et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":677,"height":562,"image_format":"jpeg","image_sha256":"056fdfbf4a3ae127eb22e91906c83f8820fd68b755c1cebe6dfdac1ce847cd7a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_61_figure_5.jpg","caption":"Figure 5. (a,b) Cross-sectional TEM images of a Co film deposited by performing 1000 ALD cycles of the $\\mathrm{AB - NH_3}$ process.","id":"test/atomic-layer-deposition/experimental-usecase/61/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/61/figure_5","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":5,"width":469,"height":139},{"panel_id":"b","x":5,"y":154,"width":469,"height":314}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/Vos et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"61","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":475,"height":470,"image_format":"jpeg","image_sha256":"b508e24892a48fc210d7c0fea1b1a1ae328847ae1f09afdf466c8ed9e4786f6d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_22_figure_4.jpg","caption":"Figure 4. RSA simulation results for aniline adsorption on $\\left(\\mathbf{a} - \\mathbf{c}\\right)$ $\\mathrm{Ru(0001)}$ and $(\\mathrm{d} - \\mathrm{f})$ $\\mathrm{Co(0001)}$ surfaces: (a and d) visual simulation output, (b and e) surface aniline configuration densities as a function of the total aniline density on the surface, and (c and f) distribution of effective gap sizes after aniline adsorption. The blue dashed line at $0.49 \\mathrm{nm}$ represents the size of the TDMAT precursor. The inset in panel c shows the procedure of determining the gap sizes by measuring the minimum distance between an unoccupied site and the nearest adsorbed inhibitor molecules (i.e., the radius of the largest circular molecule that can adsorb on the unoccupied site).","id":"test/atomic-layer-deposition/simulation-usecase/22/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/22/figure_4","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"bar chart"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"line chart"},{"panel_id":"f","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows a visual RSA simulation snapshot of aniline molecules adsorbed on Ru(0001). Horizontal and vertical configurations populate the surface, illustrating steric blocking and coverage patterns as packing approaches saturation.\"},{\"panel_id\":\"b\",\"text\":\"plots horizontal, vertical, and total aniline configuration densities as a function of attempted total density. Ru shows high achievable coverage, with a saturation point near ~1.8 nm⁻². Horizontal adsorption becomes dominant at high densities.\"},{\"panel_id\":\"c\",\"text\":\"displays a histogram of effective gap sizes remaining after aniline adsorption. Ru leaves only very small gaps (<0.25 nm), far below the required TDMAT precursor radius (0.49 nm), indicating strong inhibition capability. The inset illustrates how gap sizes are measured.\"},{\"panel_id\":\"d\",\"text\":\"shows RSA adsorption on Co(0001). The packing is visibly less dense than Ru, with more irregular spacing and larger void areas.\"},{\"panel_id\":\"e\",\"text\":\"indicates lower total achievable density than Ru. Horizontal coverage rises but saturates earlier, suggesting less efficient packing and weaker inhibitor blocking.\"},{\"panel_id\":\"f\",\"text\":\"shows much larger residual gaps on Co compared to Ru. Some gaps approach or exceed the TDMAT radius, meaning TDMAT could still adsorb through voids—indicating poorer blocking performance.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Total density (nm²) | Configuration density (nm²) |\\n|---|---|\\n| 0.0 | 0.0 |\\n| 0.2 | 0.2 |\\n| 0.4 | 0.4 |\\n| 0.6 | 0.6 |\\n| 0.8 | 0.8 |\\n| 1.0 | 1.0 |\\n| 1.2 | 1.2 |\\n| 1.4 | 1.4 |\\n| 1.6 | 1.6 |\\n| 1.8 | 1.8 |\\n| 2.0 | 2.0 |\"},{\"panel_id\":\"c\",\"text\":\"| Effective gap size (nm) | Surface density (nm⁻²) |\\n|---|---|\\n| 0.20 | 0.07 |\\n| 0.25 | 0.03 |\\n| 0.30 | 0.01 |\\n| 0.35 | 0.00 |\\n| 0.40 | 0.00 |\\n| 0.45 | 0.00 |\\n| 0.50 | 0.00 |\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"| Total density (nm²) | Configuration density (nm²) |\\n|---|---|\\n| 0.0 | 0.0 |\\n| 0.2 | 0.2 |\\n| 0.4 | 0.4 |\\n| 0.6 | 0.6 |\\n| 0.8 | 0.8 |\\n| 1.0 | 1.0 |\\n| 1.2 | 1.2 |\\n| 1.4 | 1.4 |\\n| 1.6 | 1.6 |\\n| 1.8 | 1.8 |\\n| 2.0 | 2.0 |\"},{\"panel_id\":\"f\",\"text\":\"| Effective gap size (nm) | Surface density (nm⁻²) |\\n|---|---|\\n| 0.20 | 0.09 |\\n| 0.25 | 0.01 |\\n| 0.30 | 0.00 |\\n| 0.35 | 0.00 |\\n| 0.40 | 0.00 |\\n| 0.45 | 0.00 |\\n| 0.50 | 0.00 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The gap-size distribution quantifies the openings left between adsorbed inhibitor molecules. If these gaps are smaller than the critical precursor radius, the precursor cannot reach the metal surface and adsorption is blocked. Ru shows mostly sub-0.25 nm gaps, far below the TDMAT effective radius, indicating strong growth inhibition. Co exhibits larger gaps, meaning the precursor may still access the surface, reducing selectivity. Thus, gap statistics directly determine how effectively an inhibitor layer prevents undesired precursor adsorption.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ru achieves the higher packing density.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes — RSA places molecules one by one and stops once further insertions are sterically blocked.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Molecular orientation (horizontal vs. vertical), Packing efficiency of adsorbed molecules, Surface-dependent steric constraints, Local arrangement of nearest-neighbor molecules, Minimum distance rules used in RSA gap-size calculations\"}]}]","bbox":[{"panel_id":"a","x":11,"y":10,"width":380,"height":304},{"panel_id":"b","x":412,"y":0,"width":360,"height":354},{"panel_id":"c","x":800,"y":0,"width":367,"height":353},{"panel_id":"d","x":11,"y":380,"width":378,"height":312},{"panel_id":"e","x":412,"y":385,"width":362,"height":342},{"panel_id":"f","x":801,"y":384,"width":366,"height":343}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/I. Tezsevin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1167,"height":727,"image_format":"jpeg","image_sha256":"b7c669a589d92fd26d8172fcb1edb07a70e8ac6c217d81740e3cfe4263ce53da","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_33_figure_2.jpg","caption":"Figure 2. SEM and AFM images showing the $\\mathrm{Al}_2\\mathrm{O}_3$ coverage on graphene after 100 cycles of $\\mathrm{Al}_2\\mathrm{O}_3$ ALD at $100^{\\circ}\\mathrm{C}$ for $\\mathbf{a},\\mathbf{d}$ pristine, $\\mathbf{b},\\mathbf{e}$ $30~\\mathrm{s}~\\mathrm{O}_2$ plasma, and $\\mathbb{C},\\mathbb{f})$ $35~\\mathrm{s}~\\mathrm{H}_2$ plasma treated graphene. The root-mean-square (RMS) roughness determined from the AFM measurements is indicated as well.","id":"test/atomic-layer-deposition/simulation-usecase/33/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/33/figure_2","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"SEM image after 100 cycles of Al2O3 ALD on pristine graphene, showing non uniform coverage with visible holes and a granular film texture.\"},{\"panel_id\":\"b\",\"text\":\"SEM image after 100 cycles of Al2O3 ALD on graphene treated with 30 s O2 plasma, showing uniform Al2O3 coverage without visible pinholes.\"},{\"panel_id\":\"c\",\"text\":\"SEM image after 100 cycles of Al2O3 ALD on graphene treated with 35 s H2 plasma, showing uniform Al2O3 coverage without visible pinholes.\"},{\"panel_id\":\"d\",\"text\":\"AFM height image after 100 cycles of Al2O3 ALD on pristine graphene, showing a rough granular surface with RMS roughness 1.9 nm.\"},{\"panel_id\":\"e\",\"text\":\"AFM height image after 100 cycles of Al2O3 ALD on 30 s O2 plasma treated graphene, showing a smooth surface with RMS roughness 0.39 nm.\"},{\"panel_id\":\"f\",\"text\":\"AFM height image after 100 cycles of Al2O3 ALD on 35 s H2 plasma treated graphene, showing a smooth surface with RMS roughness 0.45 nm.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The much lower roughness for the O2 and H2 plasma treated samples is consistent with a closed, more continuous Al2O3 layer forming during ALD. The paper links this to plasma created surface groups that increase adsorption of the ALD precursor on graphene, which reduces the nucleation delay and improves coverage. In contrast, pristine graphene lacks sufficient adsorption sites, so nucleation is sparse and the film remains granular with holes.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It indicates that the white bar corresponds to a lateral distance of 200 nm in the image.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A closed Al2O3 layer is required if the film is to act as an effective dielectric and barrier layer on graphene. The figure shows that without pretreatment the Al2O3 is not closed, which the paper notes is not suitable for applications such as a gate dielectric. With O2 or H2 plasma pretreatment, the uniform and smooth Al2O3 indicates a much more viable dielectric layer for device integration.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Pristine graphene: non uniform growth with holes and a granular structure, and higher RMS roughness around 1.9 nm. \\n\\nO2 plasma and H2 plasma: uniform deposition with no visible pinholes, and much lower RMS roughness around 0.39 nm and 0.45 nm.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":292,"height":219},{"panel_id":"b","x":307,"y":0,"width":285,"height":218},{"panel_id":"c","x":607,"y":0,"width":282,"height":218},{"panel_id":"d","x":0,"y":241,"width":291,"height":334},{"panel_id":"e","x":307,"y":241,"width":285,"height":334},{"panel_id":"f","x":607,"y":240,"width":282,"height":335}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":889,"height":575,"image_format":"jpeg","image_sha256":"7cd4023741fed0ea3a84a98f5349a4f2de2a4c5977f580f0a68aec9e02e5a525","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_33_figure_3.jpg","caption":"Figure 3. Cross-sectional TEM image of 100 cycles of $\\mathrm{Al}_2\\mathrm{O}_3$ deposited on graphene treated with $35~\\mathrm{s}$ $\\mathrm{H}_{2}$ plasma. The $\\mathrm{Al}_2\\mathrm{O}_3$ layer is $7.8\\pm 0.4$ nm thick and pinhole-free.","id":"test/atomic-layer-deposition/simulation-usecase/33/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/33/figure_3","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Cross section TEM image of a Au capped Al2O3 graphene SiO2 stack after 100 cycles of Al2O3 ALD on graphene treated with 35 s H2 plasma, showing a uniform Al2O3 layer that is 7.8 ± 0.4 nm thick and described as pinhole free.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It corresponds to graphene treated with 35 s H2 plasma followed by 100 cycles of Al2O3 ALD.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TEM cross section gives an Al2O3 thickness of 7.8 ± 0.4 nm. The paper reports a thickness of 9 ± 1 nm from spectroscopic ellipsometry for Al2O3 grown on H2 plasma treated graphene, and states that the TEM value is in agreement with the ellipsometry thickness within uncertainty.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Au\\n\\n, Al2O3\\n\\n, Graphene\\n\\n, SiO2\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A uniform, pinhole free Al2O3 film is needed to function as a continuous dielectric and barrier layer rather than leaving exposed graphene regions that can leak or short. This figure is used as confirmation that, after H2 plasma functionalization and 100 ALD cycles, the Al2O3 is closed and continuous, supporting the paper’s goal of enabling practical dielectric integration on graphene.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":281,"height":244}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":281,"height":244,"image_format":"jpeg","image_sha256":"31c17284742161d890aa87160d0934b9326ac5f1f1e3425b076b1274176ea2df","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_34_figure_4.jpg","caption":"Figure 4. a) SEM image of pristine graphene after transfer to $\\mathrm{SiO}_{2}$ and anneal at $400^{\\circ}\\mathrm{C}$ . Wrinkles and bilayer graphene are visible in the image. b) SEM image of pristine graphene after 500 cycles of Pt ALD at $300^{\\circ}\\mathrm{C}$ . Preferential Pt growth occurs on the graphene wrinkles, grain boundaries, and defects sites.","id":"test/atomic-layer-deposition/simulation-usecase/34/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/34/figure_4","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":11,"width":654,"height":485},{"panel_id":"b","x":4,"y":540,"width":654,"height":483}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":661,"height":1030,"image_format":"jpeg","image_sha256":"80e86d72de8a8a9d00f81e37d96a3021ee72eac0365485a728731a52b78428db","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_34_figure_5.jpg","caption":"Figure 5. SEM image of graphene exposed to different plasma treatments followed by 500 cycles of Pt ALD: a) $\\mathsf{H}_{2}$ plasma 2 min, b) $\\mathsf{H}_{2}$ Plasma 4 min, c) $\\mathsf{H}_{2}$ Plasma 5 min, d) $\\Omega_{2}$ plasma 1 min, e) $\\Omega_{2}$ plasma 3 min, and f) $\\Omega_{2}$ plasma 5 min. The Pt surface coverage increases as a function of the plasma exposure time for both $\\mathsf{H}_{2}$ and $\\Omega_{2}$ plasma treatments. d-f) Adapted with permission.[19] Copyright 2016, Royal Society of Chemistry.","id":"test/atomic-layer-deposition/simulation-usecase/34/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/34/figure_5","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":11,"y":15,"width":365,"height":274},{"panel_id":"b","x":404,"y":14,"width":366,"height":272},{"panel_id":"c","x":797,"y":15,"width":368,"height":269},{"panel_id":"d","x":7,"y":315,"width":366,"height":269},{"panel_id":"e","x":402,"y":311,"width":368,"height":272},{"panel_id":"f","x":795,"y":313,"width":366,"height":267}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1167,"height":587,"image_format":"jpeg","image_sha256":"cb948f95201f0df88ace1dc63eaa49303c9ba1b0972f49073db8e3aa0bbbe941","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_34_figure_6.jpg","caption":"Figure 6. Optical micrograph of a), c) graphene patterned with CTLM structures by photolithography using photosensitive polyimide as the resist and the same structures b), d) after $5\\min$ of $\\mathsf{H}_{2}$ plasma functionalization and 1000 cycles of Pt ALD. No Pt growth occurs on the polyimide allowing for the AS-ALD of Pt. The parameters of Equation (1) are indicated in d) as well.","id":"test/atomic-layer-deposition/simulation-usecase/34/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/34/figure_6","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":0,"width":327,"height":310},{"panel_id":"b","x":333,"y":4,"width":327,"height":306},{"panel_id":"c","x":5,"y":325,"width":329,"height":268},{"panel_id":"d","x":336,"y":325,"width":324,"height":269}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":664,"height":597,"image_format":"jpeg","image_sha256":"6f21a5bb2f56154bd217b90a34cf4a327c7eaf3994e945cb80aa41ea1e97001e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_12_fig_5.jpg","caption":"FIG. 5. Cross-sectional TEM images of $\\mathrm{Al_2O_3}$ deposited and etched on 3D Si trench structures. (a) Trench structure coated with an $\\mathrm{Al_2O_3}$ film by plasma ALD, showing average film thickness in four regions. (b) A similar trench structure after 40 ALE cycles, in which the thickness etched in each region is highlighted. The standard ALE cycle was used to perform the etching.","id":"test/atomic-layer-etching/experimental-usecase/12/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/12/fig_5","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a cross-sectional view of the material structure before etching, displaying the average film thickness in four sections.\"},{\"panel_id\":\"b\",\"text\":\"The image shows a cross-sectional view of the material structure after 40 cycles of ALE (Atomic Layer Etching), displaying changes in film thickness for four regions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Isotropic atomic layer etching\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"11.6 nm (corresponds to the difference between 23.3 nm and 11.9 nm).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thickness decreases after 40 cycles of atomic layer etching (ALE).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The EPC is around 12/40 = 0.3 nm/cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Especially ions within a plasma are directionall meaning that side walls in 3D structures have a lower ion dose meaning that the method is not conformal.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Al₂O₃ is removed with exceptional uniformity across the entire trench. The etched thickness ranges from ~10.4 to ~11.4 nm between the top, sidewalls, and bottom. This corresponds to a variation of less than ±5 %, demonstrating that both ALE half-reactions fully saturate all surfaces independent of aspect ratio.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~2.66 Å/cycle in the trench versus ~3.1 Å/cycle on blanket films.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The average etch rate over the 3D trench structures was calculated to be 2.9 ± 0.1 Å/cycle, which agrees well with the Etch Per Cycle (EPC) value obtained for blanket substrates.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"40 cycles of alternating SF₆ plasma and TMA pulses.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Average thickness of Al2O3 before etching = 22.6 nm\\n2. Average thickness of Al2O3 after 40 cycles of etching = 11.6nm\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Etched thickness = 11nm, Etch rate = 11/40 = - 0.28 nm/ALE cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sidewall thickness decreases significantly after 40 ALE cycles. Pre-etch measurements ranged from 21.6 nm to 23.3 nm, while post-etch values range from 11.2 nm to 12.2 nm. This consistent reduction across the measured points suggests uniform and controlled material removal via ALE.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Pre-ALE (plasma ALD): 21.8 nm, 23.3 nm, 22.6 nm, 21.6 nm, Post 40 ALE cycles: 11.4 nm, 11.9 nm, 12.2 nm, 11.2 nm, Observation: The etch depth is relatively consistent across regions, indicating isotropic etching\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The similar etch depth across different surfaces indicates that the ALE process is isotropic, meaning it does not depend strongly on the orientation of the surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Achieving isotropic etching ensures uniform material removal across complex 3D geometries, which is critical for maintaining structural integrity and predictable etch rates in microfabrication and semiconductor applications.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Not all measurements along the trench show the same thickness where the biggest difference is 1.7 nm, so not fully conformal.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The main reason for this difference is the different densities of the materials.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thickness variation is less than ±0.85 nm from top to bottom of the trench.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The comparison demonstrates that the process is highly isotropic. In the pre-etch image (a), the film is conformal with a thickness of ~22 nm. After 40 cycles (b), the thickness is reduced to ~11–12 nm on both the horizontal surfaces (top/bottom) and the vertical sidewalls. The fact that the amount of material removed (~10–11 nm) is virtually identical on all faces confirms that the plasma-generated radicals etch all exposed surfaces equally, unlike ion-driven plasma processes which are typically directional.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This plasma ALE process exhibits a comparable etch depth for both horizontal and vertical surfaces of 11.4 nm and 11. 9 nm, respectively. \\nAnisotropic etching would lead to a higher etch rate on horizontal surfaces. This suggests that directional ions in the SF6 plasma do not significantly contribute to etching of the Al2O3 surface. A possible explanation for why the etch rate on the horizontal surfaces appears slightly lower than that on the vertical surfaces is densification of the film due to ion exposure during the O2 plasma steps of the Al2O3 ALD cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Plasma-enhanced atomic layer etching (ALE) using SF₆ plasma and TMA exposure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Etch rate, Uniformity, Precision, Material selectivity\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Al2O3 film was first deposited on the Si trench structures using plasma ALD with TMA and O2 plasma, resulting in a uniform thickness of ~210 Å. Subsequently, the film was etched using 40 ALE cycles, which alternated SF6 plasma exposure with TMA dosing. This process led to a uniform etch across horizontal and vertical surfaces, demonstrating the isotropic nature of the ALE process.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":8,"width":291,"height":469},{"panel_id":"b","x":299,"y":10,"width":285,"height":468}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":586,"height":481,"image_format":"jpeg","image_sha256":"2a0aa1428df1dc686c420392ed4dfdfcc73c749b30cafee6562363b30891b637","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_18_fig_8.jpg","caption":"FIG. 8. TEM cross sections of a $4 \\times 50 \\mathrm{nm}$ InGaAs nanowire covered by $4.7 \\mathrm{nm}$ ALD-grown $\\mathrm{Al}_2\\mathrm{O}_3$ and $20 \\mathrm{nm}$ of ALD tungsten. Reprinted with permission from Lu et al., in International Electron Devices Meeting, San Francisco, 1-5 December 2018 (IEDM, Montgomery Village, 2018), p. 895. Copyright 2018, IEEE.","id":"test/atomic-layer-etching/experimental-usecase/18/fig_8","sample_id":"atomic-layer-etching/experimental-usecase/18/fig_8","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":7,"width":408,"height":397},{"panel_id":"b","x":414,"y":6,"width":246,"height":396}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":667,"height":406,"image_format":"jpeg","image_sha256":"30663a1ececfacb558c60061d01e2c009ff6a13d27ca7a63ac8ee9641ad01f2e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_37_fig_10.jpg","caption":"FIG. 10. (a) Cross-sectional TEM and (b) TEM-EDS mapping of 10 ALD/ALE super-cycles at $270~\\mathrm{ms}$ dosing conditions on $\\mathrm{Si / SiO_2}$ pattern. (c) Cross-sectional TEM and (d) TEM-EDS mapping of 30 ALD/ALE super-cycles at $90~\\mathrm{ms}$ dosing conditions on $\\mathrm{Si / SiO_2}$ pattern.","id":"test/atomic-layer-etching/experimental-usecase/37/fig_10","sample_id":"atomic-layer-etching/experimental-usecase/37/fig_10","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":9,"width":624,"height":348},{"panel_id":"b","x":645,"y":12,"width":619,"height":343},{"panel_id":"c","x":10,"y":364,"width":623,"height":347},{"panel_id":"d","x":643,"y":369,"width":621,"height":340}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/Effect of reactant dosing on selectivity during area-selective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1272,"height":714,"image_format":"jpeg","image_sha256":"229e18d831233a9ba87b4eaa0e258e091339730c06fe291443cce97070957d41","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_37_fig_9.jpg","caption":"FIG. 9. SEM images of $\\mathrm{TiO_2}$ ALD/ALE on patterned $\\mathrm{Si / SiO_2}$ substrates using (a) $270~\\mathrm{ms}$ dosing conditions for 10 super-cycles and (b) $90~\\mathrm{ms}$ dosing conditions for 30 super-cycles.","id":"test/atomic-layer-etching/experimental-usecase/37/fig_9","sample_id":"atomic-layer-etching/experimental-usecase/37/fig_9","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":7,"y":5,"width":470,"height":314},{"panel_id":"b","x":11,"y":332,"width":469,"height":309}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/Effect of reactant dosing on selectivity during area-selective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":487,"height":647,"image_format":"jpeg","image_sha256":"663e5b277cd7067f46770e86d8aeaf522695d92e2baa0035e1e7640a9b1164cd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG11.jpg","caption":"FIG. 11. SEM image of (a) the film left over from fully etched Mo films (after 1000 cycles of $\\mathrm{NbCl}_5$ and $\\mathrm{O}_2$ at $300^{\\circ}\\mathrm{C}$ ) and (b) after cleaning the sample with $\\mathrm{O}_3$ at $300^{\\circ}\\mathrm{C}$ . AFM images of the fully etched Mo sample (c) before and (d) after cleaning with $\\mathrm{O}_3$ at $300^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-etching/experimental-usecase/47/FIG11","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG11","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":3,"width":650,"height":485},{"panel_id":"b","x":660,"y":9,"width":643,"height":472},{"panel_id":"c","x":118,"y":500,"width":537,"height":380},{"panel_id":"d","x":674,"y":498,"width":528,"height":380}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1317,"height":890,"image_format":"jpeg","image_sha256":"a1efd131864d6443e40aab025b51ca40d4affa7f32b4a0aa94ba9cc3947659ef","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG9.jpg","caption":"FIG. 9. SEM images of (a) an unetched molybdenum film and (b) a film etched for 200 cycles at $300^{\\circ}\\mathrm{C}$ with a remaining thickness of $41.6\\mathrm{nm}$ .","id":"test/atomic-layer-etching/experimental-usecase/47/FIG9","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG9","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":10,"y":4,"width":524,"height":394},{"panel_id":"b","x":543,"y":9,"width":519,"height":392}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1067,"height":406,"image_format":"jpeg","image_sha256":"5ce75c2152f967c6df5086e4b52d9ca0c7cd8e3360953b90555caae72f90b339","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_21_figure_7.jpg","caption":"Figure 7. Examples of the ALE smoothing effect. Images show the surface before and after ALE in (a) tilt SEM with Ru ALE, 100 cycles and (b) side-view HR-TEM with Si ALE, 50 cycles.","id":"test/atomic-layer-etching/simulation-usecase/21/figure_7","sample_id":"atomic-layer-etching/simulation-usecase/21/figure_7","subset":"image-panel","split":"test","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The tilt-SEM images show that Ru surface roughness decreases from 0.80 nm to 0.20 nm after 100 ALE cycles, indicating strong planarization under layer-by-layer removal conditions.\"},{\"panel_id\":\"b\",\"text\":\"The side-view HR-TEM images of Si show pronounced smoothing after 50 ALE cycles, with reduced atomic-scale height variations at the surface compared to the incoming interface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Each ALE cycle consists of a self-limiting surface modification step followed by a directional activation step that removes only the modified layer. On Ru, protruding features experience higher reaction probability during modification, making them preferentially removed during activation. Recessed regions remain protected because modification saturates uniformly. Repeating this cycle progressively suppresses height gradients, producing the observed reduction from 0.80 nm to 0.20 nm RMS.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A smoother Ru surface promotes uniform nucleation during subsequent barrier or liner deposition, reducing the likelihood of discontinuities. It also minimizes local electric-field and current-density concentrations that can degrade reliability. As a result, ALE-induced smoothing supports improved manufacturability and performance in advanced interconnect schemes.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50 cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ALE preferentially removes protruding lattice features, producing a more uniform near-surface atomic structure.\"}]}]","bbox":[{"panel_id":"a","x":26,"y":5,"width":955,"height":282},{"panel_id":"b","x":38,"y":283,"width":942,"height":210}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/Review Paper -- Atomic Layer Etching Rethinking the Art of Etch.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":983,"height":497,"image_format":"jpeg","image_sha256":"bc206d7cf07163687fe140e37ed4d6962d8a2e151bc6d1e22e5cce0a3a72343f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/image-panel/train/metadata.jsonl b/subsets/image-panel/train/metadata.jsonl index 2749641e77fe2b05ea2440fd97f2ad1e569154a5..5a3e2f90f100df6e8ebcc21ed9ffa6984ae74073 100644 --- a/subsets/image-panel/train/metadata.jsonl +++ b/subsets/image-panel/train/metadata.jsonl @@ -1,70 +1,70 @@ -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_12_fig_12.jpg","caption":"Fig. 12. Atomic force microscope image of a $\\sim 320\\mathrm{A}$ thick tungsten film deposited at $425\\mathrm{K}$ after 125 AB cycles. The $\\mathrm{WF}_6$ and $\\mathrm{Si}_2\\mathrm{H}_6$ reactant exposures were sufficient for complete half-reactions. The light-to-dark range is $25\\mathrm{\\AA}$","id":"train/atomic-layer-deposition/experimental-usecase/12/fig_12","sample_id":"atomic-layer-deposition/experimental-usecase/12/fig_12","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/J.W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":650,"height":342,"image_format":"jpeg","image_sha256":"d4b9b612c83f0a5c0e7cad08214bd57cb131e40fa8a7541d0b43835c125187dd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":0,"width":641,"height":342}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_13_fig_4.jpg","caption":"FIG. 4. Cross-sectional SEM micrograph of a $20~\\mathrm{nm}$ Ti-Si-N film grown by MOALD at $180^{\\circ}\\mathrm{C}$ . Step coverage of the $\\mathrm{Ti - Si - N}$ film is approximately $100\\%$ even on the $0.3\\mu \\mathrm{m}$ diam hole with slightly negative slope and 10:1 aspect ratio.","id":"train/atomic-layer-deposition/experimental-usecase/13/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/13/fig_4","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/Jae-Sik Min et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":508,"height":530,"image_format":"jpeg","image_sha256":"42b0f3022b98e14b6599dc9d9310e526283e29cc136e12497f0e0a5cc424dba3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":503,"height":527}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_16_fig_8.jpg","caption":"FiG. 8. (a) TEM image of the MIM stack and (b) a close-up of the $\\mathrm{ZrO_2}$ film. $\\mathrm{ZrO_2}$ was deposited with the $\\mathrm{Zr(Me_5Cp)(TEA) / O_3}$ process at $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/16/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/16/fig_8","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/Sanni Seppala et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":644,"height":992,"image_format":"jpeg","image_sha256":"1823f2f31571be9dd480ab4a3a14a6bd9b73f836c910ebe630f9cd3329304f9d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":21,"y":39,"width":620,"height":625},{"panel_id":"b","x":37,"y":700,"width":604,"height":286}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_2_figure_5.jpg","caption":"Figure 5. SEM images of (a) 50- and (b) 110-nm-thick platinum films.","id":"train/atomic-layer-deposition/experimental-usecase/2/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/2/figure_5","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":669,"height":1025,"image_format":"jpeg","image_sha256":"fbe01f5056199626e32fe5964c3b1239ad37cf8e634451b91a64fd671bd794cf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":45,"y":-4,"width":623,"height":505},{"panel_id":"b","x":47,"y":530,"width":621,"height":494}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Subfigure (a) shows the surface morphology of a ~50 nm ALD-grown Pt film, characterized by a dense population of small, bright Pt nanoparticles distributed across the substrate. The grains appear closely packed, indicating early coalescence but with significant nanoscale roughness remaining.\"},{\"panel_id\":\"b\",\"text\":\"Subfigure (b) displays the morphology of a thicker ~110 nm Pt film, where the particles appear larger and more coalesced, consistent with grain growth through continued ALD cycling. The increased thickness promotes lateral grain expansion and partial merging, yielding a smoother but still nanostructured Pt layer. Together, the images illustrate the thickness-dependent evolution of Pt film morphology typical for ALD-grown noble metals.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Larger Pt grains are present in subfigure (b), indicating extended coalescence.\\n-The particle density visually decreases as grains merge with increasing thickness.\\n-The surface appears smoother at the microscale in subfigure (b) than in (a).\\n-Subfigure (a) shows more discrete, fine nanoparticles, while subfigure (b) shows more mature, merged grain structures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Electrical conductivity, due to reduced electron scattering at grain boundaries.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the early stages of Pt ALD, individual adsorption–reduction events produce isolated nuclei that progressively grow laterally as cycles accumulate. With more cycles, precursor adsorption on existing Pt clusters becomes increasingly favorable, accelerating coalescence. Over time, these nuclei merge into larger grains, reducing the density of isolated particles and promoting film continuity. Subfigure (a) captures an intermediate stage where coalescence has begun but complete grain merging has not yet occurred.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The finer nanoparticle structure in the thinner film provides a higher surface-to-volume ratio and a larger density of exposed active sites, which can enhance catalytic activity. Although electrical connectivity may be lower, catalytic performance often benefits from high surface area rather than continuous film coverage.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_2_figure_6.jpg","caption":"Figure 6. AFM images of (a) 50- and (b) 110-nm-thick platinum films. Please note that the images have different $\\mathcal{Z}$ -axis scales.","id":"train/atomic-layer-deposition/experimental-usecase/2/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/2/figure_6","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":625,"height":911,"image_format":"jpeg","image_sha256":"bb0b2c4038d4d38e779f2cead807a6e9f18e6b0746cfdb6da5001f2c58630928","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":0,"width":615,"height":417},{"panel_id":"b","x":7,"y":480,"width":617,"height":429}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Subfigure (a) shows a 3D AFM height map of a ~50 nm ALD-grown Pt film. The topology consists of rounded hill-valley structures with moderate amplitude, indicating partially coalesced grains that have not yet reached full surface continuity.\"},{\"panel_id\":\"b\",\"text\":\"Subfigure (b) presents a ~110 nm Pt film whose AFM landscape exhibits sharper protrusions and a larger vertical scale, consistent with continued grain growth and columnar thickening typical of noble-metal ALD. The difference in z-axis scaling between (a) and (b) highlights that the thicker film exhibits significantly higher peak-to-valley contrast, reflecting its rougher nanoscale texture. Together, the images illustrate thickness-dependent morphological evolution characteristic of Pt ALD.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Subfigure (a) shows rounded, laterally spread hill-valley structures. Subfigure (b) exhibits sharper, taller protrusions. This change indicates that lateral grain expansion has saturated, and additional ALD cycles preferentially increase vertical grain height (columnar thickening).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Local electric field distribution, which can affect charge injection, field emission, and catalytic reaction rates.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In ALD, each reaction cycle deposits material in a surface-saturating manner, limiting uncontrolled vertical growth. However, local variations in nucleation density and surface diffusion lead to uneven lateral growth across grains. This produces a uniformly covered but moderately corrugated surface, as seen in subfigure (a), where height variations arise from partially coalesced grains rather than runaway growth.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"By correlating roughness trends with film thickness, engineers can tune ALD conditions to suppress excessive vertical growth when smooth films are required or enhance roughness when high surface area is desired. This morphological feedback loop is essential for tailoring Pt films for specific applications like catalysis or microelectronics.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_22_fig_5.jpg","caption":"Fig. 5. FESEM images of LiF films deposited at various temperatures on $\\mathrm{SiO_2 / Si(111)}$ substrates. Deposition temperatures and film thicknesses are; a) $250^{\\circ}\\mathrm{C}$ $111\\mathrm{nm}$ , b) $275^{\\circ}\\mathrm{C}$ $97\\mathrm{nm}$ , c) $300^{\\circ}\\mathrm{C}$ $88\\mathrm{nm}$ , d) $325^{\\circ}\\mathrm{C}$ $73\\mathrm{nm}$ , and e) $350^{\\circ}\\mathrm{C}$ $90\\mathrm{nm}$ . Lithd and $\\mathrm{TiF_4}$ pulse lengths were $2\\mathrm{s}$ and purge times between these pulses were $4\\mathrm{s}$ .","id":"train/atomic-layer-deposition/experimental-usecase/22/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/22/fig_5","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/Miia Mantymaki et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1272,"height":947,"image_format":"jpeg","image_sha256":"36ccda8e597b98e154ac6b402bf6153f1e4ca9164664dba6ece0aeff3d8d93de","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"d","x":657,"y":469,"width":614,"height":469},{"panel_id":"b","x":647,"y":0,"width":619,"height":467},{"panel_id":"c","x":6,"y":466,"width":647,"height":474},{"panel_id":"e","x":321,"y":252,"width":637,"height":474},{"panel_id":"a","x":6,"y":0,"width":637,"height":456}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_22_fig_6.jpg","caption":"Fig. 6. AFM images of LiF films deposited at various temperatures. Deposition temperatures, films thicknesses, and rms roughnesses are; a) $250^{\\circ}\\mathrm{C}$ 111 nm 6.3 nm, b) $275^{\\circ}\\mathrm{C}$ 97 nm 9.5 nm, c) $300^{\\circ}\\mathrm{C}$ 88 nm 12.3 nm, d) $325^{\\circ}\\mathrm{C}$ 73 nm 15.9 nm, and e) $350^{\\circ}\\mathrm{C}$ 90 nm 20.6 nm. Notice that the vertical axis has a different scale in image e). Lithd and $\\mathrm{TiF_4}$ pulse lengths were 2 s and purge times between these pulses were 4 s.","id":"train/atomic-layer-deposition/experimental-usecase/22/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/22/fig_6","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/Miia Mantymaki et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1275,"height":945,"image_format":"jpeg","image_sha256":"a799c8351fc2a9ecca9413076019e54cbe35cdb41b2ebafffaf983263a814df7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"d","x":692,"y":320,"width":580,"height":353},{"panel_id":"b","x":668,"y":10,"width":604,"height":320},{"panel_id":"c","x":0,"y":345,"width":557,"height":345},{"panel_id":"e","x":338,"y":591,"width":590,"height":348},{"panel_id":"a","x":3,"y":5,"width":587,"height":321}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_25_figure_7.jpg","caption":"Figure 7. SEM micrographs of the $\\mathrm{ZnO:Al / ZnO / ESL / ACIGS}$ stacks, where the ESL is (a) $\\mathrm{ZnO}$ , (b) ZGO 0.12, (c) ZGO 0.33, (d) $\\mathrm{SnO}_{y}$ , and (e) TGO 0.10. The scale bar represents $200~\\mathrm{nm}$ in (a) and (b) and $100~\\mathrm{nm}$ in (c)–(e). (f) Schematic illustration of the $\\mathrm{ZnO:Al / ZnO / ESL / ACIGS}$ stack.","id":"train/atomic-layer-deposition/experimental-usecase/25/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/25/figure_7","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"device structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/Adam Hultqvist et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":842,"height":380,"image_format":"jpeg","image_sha256":"859779510c12807ca1c1a92d8e344924efc298856f5f1f33ebb3b2bba2c5f5d7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"d","x":8,"y":197,"width":277,"height":183},{"panel_id":"b","x":285,"y":6,"width":278,"height":188},{"panel_id":"c","x":565,"y":5,"width":274,"height":187},{"panel_id":"e","x":285,"y":196,"width":278,"height":184},{"panel_id":"f","x":563,"y":196,"width":277,"height":186},{"panel_id":"a","x":9,"y":8,"width":276,"height":184}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_11.jpg","caption":"Figure 11. AFM image for $89\\mathrm{-nm}$ ALD ITO film deposited on Si-100 at $275^{\\circ}C$ using 600 cycles with $5\\%$ $\\mathrm{SnO_2}$ cycles.","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_11","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_11","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":397,"height":420,"image_format":"jpeg","image_sha256":"c4a9ed1be9fd8d94c2c6987402084adc64b194b1453ea50003da5583ccee249a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":397,"height":420}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_12.jpg","caption":"Figure 12. SEM plan-view (a) and cross-sectional (b) images of ALD ITO film deposited on Si(100) using 600 cycles with $5\\%$ $\\mathrm{SnO_2}$ cycles at $275^{\\circ}C$ .","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_12","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_12","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":492,"height":580,"image_format":"jpeg","image_sha256":"a254805a2bc76a75128f8ae336a15913e26fbbfafecca6c775175669576fb752","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":6,"width":482,"height":334},{"panel_id":"b","x":7,"y":344,"width":481,"height":232}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_13.jpg","caption":"Figure 13. (a) Cross-sectional SEM image of AAO membrane coated conformally with $9.7\\mathrm{-nm}$ ALD ITO film, and also with $161\\mathrm{-nm}$ ALD ITO film deposited selectively on the AAO front surface visible on the left side of the image. (b) Higher-resolution SEM image of AAO membrane showing that the $20\\mathrm{-nm}$ pores are sealed, and ITO nanocrystals decorate the inner walls of the $200\\mathrm{-nm}$ pores.","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_13","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_13","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":980,"height":425,"image_format":"jpeg","image_sha256":"21cbf9025442a856e62d855bda9b114c9cb3e5e6a00154782f95079c4005107f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":0,"width":493,"height":422},{"panel_id":"b","x":531,"y":4,"width":445,"height":417}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_27_fig_4.jpg","caption":"Fig. 4. XTEM image of TiN film deposited by remote PEALD method on contact hole approximately $0.25\\mu \\mathrm{m}$ wide and $2.5\\mu \\mathrm{m}$ deep.","id":"train/atomic-layer-deposition/experimental-usecase/27/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/27/fig_4","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/Ju Youn KIM et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":553,"height":672,"image_format":"jpeg","image_sha256":"c6d88db15993326bead7cfb61844b04a3e53c3f73c4f8958df8a3bd280bb0044","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":547,"height":667}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a microscopic view of TiN-coated structures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The image shows similar TiN thickness's on the sidewalls of the 3D structures as well as on top, indicating good conformality.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The aspect ratio is 10.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The top edges show chamfered edges indicating that edge effects do play a role in the deposition at these locations.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process is likely radical driven as the sidewalls, that are not influenced by the ions, show similar thickness's as the top and bottom surface.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_5.jpg","caption":"Figure 5. SEM (top) and AFM (bottom) images of the samples grown through (a), (c) the conventional ALD process and (b), (d) the ALD-DFM process on a $\\mathrm{SiO}_2$ substrate.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_5","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":666,"height":642,"image_format":"jpeg","image_sha256":"46e587451bfcbe8cbbd2d921045263bf1fd8ca18561f32b81a680d00917dea4c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":45,"y":27,"width":292,"height":285},{"panel_id":"b","x":391,"y":29,"width":274,"height":283},{"panel_id":"c","x":59,"y":370,"width":272,"height":268},{"panel_id":"d","x":390,"y":370,"width":277,"height":268}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_8.jpg","caption":"Figure 8. TEM images (left) and associated FFT analysis (right) of the samples grown through (a) the conventional ALD process and (b) the ALD-DFM process.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_8","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":672,"height":614,"image_format":"jpeg","image_sha256":"b4f086a8f80deb6c58ad6f9c092dd1ce898c37aeb5578109a8d29a298bd16ab7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":52,"y":15,"width":617,"height":282},{"panel_id":"b","x":54,"y":347,"width":611,"height":263}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_30_1b78016cb355e70dc8f9df6a158ffa618b7d7b3846cf68bd31bde9dd7bfc1aaf.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/30/1b78016cb355e70dc8f9df6a158ffa618b7d7b3846cf68bd31bde9dd7bfc1aaf","sample_id":"atomic-layer-deposition/experimental-usecase/30/1b78016cb355e70dc8f9df6a158ffa618b7d7b3846cf68bd31bde9dd7bfc1aaf","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/1b78016cb355e70dc8f9df6a158ffa618b7d7b3846cf68bd31bde9dd7bfc1aaf.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/1b78016cb355e70dc8f9df6a158ffa618b7d7b3846cf68bd31bde9dd7bfc1aaf.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/Kaupo Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"not_found"},"width":655,"height":277,"image_format":"jpeg","image_sha256":"d7d8ce8e0ec628079599d1f711682c8ed12dbf270cb19903549dfe852dd2f631","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":306,"height":277},{"panel_id":"b","x":350,"y":0,"width":305,"height":277}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a microscopic view of a sample tested under the 'Side-by-Side Setup'.\"},{\"panel_id\":\"b\",\"text\":\"The image shows a microscopic view of a sample tested under the 'Face-to-Face Setup'.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Based on the images it seems that the surface is rough.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Usually ALD and ALE applications involve extremely thin features and thickness's for which optical microscopy is not suitable.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Not every location on the setup has the same color indicating that there is non-uniformity.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"yes the probe is damaged in the corners.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_30_figure_6.jpg","caption":"Figure 6. Bird-eye scanning electron microscopy images of $\\mathrm{Fe_2O_3}$ (topmost panel) and $\\mathrm{Fe_3O_4 - MgO}$ films $2^{\\mathrm{nd}}$ to $4^{\\mathrm{th}}$ panel from top) grown using different cycle sequences indicated by labels. The films were grown from $\\mathrm{CpFeC_5H_4CHN(CH_3)_2}$ at $425^{\\circ}\\mathrm{C}$ . Film thicknesses and $\\mathrm{Mg}$ to $\\mathrm{Fe}$ atomic ratios are also given by labels.","id":"train/atomic-layer-deposition/experimental-usecase/30/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/30/figure_6","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/Kaupo Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":403,"height":1217,"image_format":"jpeg","image_sha256":"162c5d71a290bb63b1be2c5144e573d301958bd2891dbce6208465cb3d4452cb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":4,"width":394,"height":300},{"panel_id":"b","x":4,"y":312,"width":394,"height":292},{"panel_id":"c","x":6,"y":618,"width":390,"height":294},{"panel_id":"d","x":7,"y":923,"width":384,"height":283}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The pure Fe₂O₃ film shows large, faceted grains with sharp edges. The surface is rough and loosely packed. This morphology is typical of high-temperature hematite growth without modifiers.\"},{\"panel_id\":\"b\",\"text\":\"With a small amount of Mg added, the grains become smaller and less faceted. The surface looks more compact than in (a). Grain boundaries are still visible but less pronounced.\"},{\"panel_id\":\"c\",\"text\":\"At higher Mg content, the grain size is strongly reduced. The surface appears dense and uniform, with rounded features. Grain coarsening is clearly suppressed.\"},{\"panel_id\":\"d\",\"text\":\"At the highest Mg/Fe ratio, the surface consists of very fine, closely packed grains. Individual grain shapes are hard to distinguish. This indicates strong inhibition of surface diffusion and crystallite growth.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The roughest film is the non-doped film grown with Fe2O3\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Measurement: top-down SEM (“bird-eye”) surface imaging of the films\\n\\nScale bar: 1.00 µm in each panel\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The rough topography in (a) is consistent with growth dominated by separated columns/grains/pillars with voids between them. In (b), the higher packing density indicates more nucleation sites and/or tighter column spacing. In (c–d), the continuity and smoothness suggest the voided columnar morphology is suppressed, producing a more coalesced film surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A smoother, more continuous film typically improves thickness uniformity and reduces extreme topographic variations that can complicate electrical contacting or multilayer integration. It can also reduce variability in local magnetic response caused by large voids/isolated pillars. In this study, morphology is treated as a key co-variable alongside phase content when interpreting magnetic performance trends.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Panel (a): large, plate-like, faceted grains\\n-Panel (d): fine, rounded grains with high packing density\\n-Panel (a): broader grain-size distribution\\n-Panel (d): narrow grain-size distribution\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems that iron oxide grows both lateraly as well as vertically, indicating there is no preferred orientation.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Changes in the roughness can be observed as a function of the Mg/Fe ratio.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughness increases as the Mg/Fe ratio increases. The highest level of roughness is produced at the highest Mg/Fe ratio.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the Mg/Fe ratio seems to result in lower thicknesses and therefore lower GPCs. This could be an effect of nucleation delay of iron oxide growing on top of Magnesium oxide.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing MgO insertion suppresses grain growth, driving a transition from large faceted grains to finer, more rounded features. This indicates reduced surface diffusion and interrupted crystallite coalescence during growth. The effect strengthens monotonically with Mg/Fe ratio, consistent with Mg acting as a kinetic growth modifier.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Catalysis requiring high surface area\\n-Gas-sensing layers\\n-Electrochemical interfaces\\n-Diffusion-barrier coatings\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The non-doped film shows a pillar/grain-like rough surface with large voids. With small Mg addition (Mg/Fe ≈ 0.02), the surface becomes denser, and the voids shrink. At higher Mg/Fe (≈0.23–0.38), the films become more continuous and smoother, with fewer large surface openings.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The morphology of Fe2O3 films directly affects their functional properties, such as catalytic activity, magnetic behavior, and surface reactivity. By controlling MgO doping, the film’s surface continuity, pillar density, and thickness can be tuned, which can improve performance in applications where uniformity, smoothness, or specific surface features are critical.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In subfigure a, more height differences can be observed, indicating that the film consists of more voids, resulting in a lower density.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The surface roughness decreases as the MgO content increases.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Atomic force microscopy could be used, with this method actual height differences are identified.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Reduced grain size with rounded grain boundaries.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Increased density of grains/pillars, Reduced void width, Smoother and more continuous surface, Decreased overall film thickness at high MgO levels\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_30_figure_7.jpg","caption":"Figure 7. Cross section SEM/EDX images from a $72~\\mathrm{nm}$ thick film grown from $\\mathrm{CpFeC_5H_4CHN(CH_3)_2}$ at $375^{\\circ}C$ usin 500 ALD cycles on 3D substrates. The elements detected are denoted by labels.","id":"train/atomic-layer-deposition/experimental-usecase/30/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/30/figure_7","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/Kaupo Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":667,"height":623,"image_format":"jpeg","image_sha256":"d5e0f2216e10c78772a9ebf2800cd114ff50381ed9754844acbede17b80cdbc6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":12,"width":321,"height":301},{"panel_id":"b","x":347,"y":4,"width":318,"height":304},{"panel_id":"c","x":6,"y":319,"width":324,"height":301},{"panel_id":"d","x":343,"y":321,"width":320,"height":297}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The cross-section SEM image shows a continuous film coating the 3D structure. The layer follows both the top surface and the slanted sidewalls. No obvious thinning or breaks are visible.\"},{\"panel_id\":\"b\",\"text\":\"The Si EDX map highlights the underlying substrate. The signal is strong below the film and drops sharply inside the coated region. This clearly separates substrate from deposited layer.\"},{\"panel_id\":\"c\",\"text\":\"The Fe EDX map outlines the film region across the full cross section. The signal follows the same geometry seen in the SEM image. This indicates uniform iron incorporation along sidewalls and horizontal surfaces.\"},{\"panel_id\":\"d\",\"text\":\"The O EDX map closely overlaps with the Fe distribution. Oxygen is present throughout the same region as iron. This confirms that the deposited layer is an iron oxide film rather than metallic Fe.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Si.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Silicon and oxygen are more or less homogeneously distributed in the areas where they are supposed to be. Iron on the other side shows fluctuations in density, even in the iron oxide layer.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Iron (Fe), and oxygen (O).\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The image shows the Fe content.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, the Fe appears to be closest to the surface of the film.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film has a higher O content than the Fe, so the white color in the figure is more intense for the first case.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the figure it can be seen that iron atoms are present all through the sample, even in the silicon substrate. This indicates that iron diffuses into the substrate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Uniform elemental incorporation across the 3D structure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Fe map shows signal not only near the trench opening but also extending down the trench, including the bottom region. Additionally, the O map shows a corresponding distribution, consistent with an iron oxide film rather than isolated contamination. Together with the SEM cross-section, this supports the conclusion that the film can be grown conformally into high aspect-ratio (~1:20) trenches using the same cycle timing as on planar substrates.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Conformal film growth along trench walls and bottoms, Uniform thickness of the iron oxide layer (~72 nm), Depth-resolved elemental distribution of Fe and O\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At the interface between the silicon substrate and iron oxide a different density of oxygen atoms is measured than in the bulk iron oxide. This indicates that there is likely a SiO2 interface layer.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Oxygen signal (panel d) closely matches the spatial distribution of the Iron signal (panel c). Both signals are concentrated in the corrugated top layer, confirming that the deposited film is an iron oxide compound (likely Fe₂O₃ or Fe₃O₄) rather than pure iron.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure shows that ALD-grown iron oxide films can coat complex 3D structures uniformly, maintaining consistent thickness and conformality even in deep trenches. The EDX mappings confirm that both iron and oxygen are present throughout the film depth, indicating that the deposition process achieves complete coverage and stoichiometry. This suggests that such films could be reliably used in devices requiring high surface-area coatings or patterned 3D architectures.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"From the 3D structure upwards vertical lines can be identified which can be grainboundaries or local density fluctuations.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film thickness appears continuous along both horizontal and inclined surfaces, with no visible thinning at corners or sidewalls. This indicates that precursor transport and surface reactions occur uniformly throughout the 3D geometry. Such behavior is consistent with self-limiting ALD chemistry enabling conformal coverage of high-aspect-ratio features.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Modern semiconductor devices, such as FinFETs or 3D NAND flash, rely on complex, non-planar architectures to increase transistor density and performance. The ability to deposit functional materials (dielectrics, conductors) uniformly over these vertical and recessed features ensures consistent electrical behavior and prevents defects like voids or electrical shorts.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"(a) Cross-section SEM image of the trench + film\\n\\n(b) Si EDX map (substrate/trench geometry)\\n\\n(c) Fe EDX map (film penetration/conformality)\\n\\n(d) O EDX map (oxide co-location with Fe)\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ALD proceeds through self-limiting surface reactions, which helps maintain uniform growth even when reactant transport is constrained in narrow features. If precursor exposure and purge are sufficient, each surface (top, sidewalls, bottom) can reach similar surface saturation per cycle. The observed Fe/O presence along the trench depth is consistent with that expectation for ALD-type conformal coverage.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Many target applications for functional oxides (including magnetic or catalytic coatings) involve 3D, high-surface-area structures where performance depends on coating all internal surfaces. Conformal growth ensures the properties measured on planar samples can plausibly translate to 3D integration. This figure provides direct evidence that the process conditions used here can coat deep trenches rather than only planar substrates.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_33_figure_6.jpg","caption":"Figure 6 Plane-view SEM of ALD Cu on $\\mathrm{SiO}_2$ substrate (a) and $\\mathrm{Co / SiO}_2$ substrate (b).","id":"train/atomic-layer-deposition/experimental-usecase/33/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/33/figure_6","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/BOOYONG S. LIM et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":694,"height":381,"image_format":"jpeg","image_sha256":"dae32a07cf36041c8f491709c49071e67caaabc7d9523219a07f4801cbfd000c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":32,"width":348,"height":346},{"panel_id":"b","x":352,"y":33,"width":338,"height":343}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_33_figure_7.jpg","caption":"Figure 7 Cross-sectional SEM of ALD Cu/Co inside holes with an aspect ratio of about 10:1.","id":"train/atomic-layer-deposition/experimental-usecase/33/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/33/figure_7","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/BOOYONG S. LIM et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":586,"height":678,"image_format":"jpeg","image_sha256":"c059c49380314b5eb7043c6e0694ae72508fed8c7d7c03fc76cfdca9c1c2fdf5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":586,"height":678}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_36_fig_7.jpg","caption":"Fig. 7 Atomic force microscopy images of the conventional HEMT and the $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ MOS-HEMT","id":"train/atomic-layer-deposition/experimental-usecase/36/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/36/fig_7","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/Huan-Yu Shih et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":950,"height":483,"image_format":"jpeg","image_sha256":"aa54b0c0b76bac9d52a5df9d740af4f7bbbdb7c262ce42b588a9e7d7cb782d9d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":9,"width":464,"height":474},{"panel_id":"b","x":489,"y":12,"width":461,"height":471}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows an atomic force microscopy image of the conventional HEMT.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows an atomic force microscopy image of the Ga2O3 MOS-HEMT.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The conventional HEMT with a RMS value of 0.532 nm.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Ga2O3 MOS-HEMT.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Ga2O3 MOS-HEMT has the lowest RMS value compared to the conventional AlGaN HEMT.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, this could mean that both surfaces are smooth.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_4_fig_6.jpg","caption":"Fig. 6. AFM images of the $\\mathrm{HfO_2}$ films grown onto Si(100) at a) $200^{\\circ}\\mathrm{C}$ , and b) $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/4/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/4/fig_6","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":653,"height":928,"image_format":"jpeg","image_sha256":"7d82ab8e4ba2e3b583f778c2a001c75227148c1ce9148eb84779841160ea22f5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":12,"y":15,"width":641,"height":435},{"panel_id":"b","x":12,"y":479,"width":641,"height":449}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_40_fig_5.jpg","caption":"Fig. 5. Plan-view TEM micrographs of (a) TiN and (b) Ti-Si-N prepared by PEALD at $350^{\\circ}\\mathrm{C}$","id":"train/atomic-layer-deposition/experimental-usecase/40/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/40/fig_5","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":575,"height":983,"image_format":"jpeg","image_sha256":"dec607a840f61348abe5b16d99fc6da76f02a56078ec3b0ca88d97864488c260","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":5,"width":569,"height":473},{"panel_id":"b","x":5,"y":519,"width":569,"height":462}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Plan-view TEM micrograph of a TiN film deposited by PEALD at 350 °C, showing a nanocrystalline microstructure with visible grain contrast at the ~10 nm scale.\"},{\"panel_id\":\"b\",\"text\":\"Plan-view TEM micrograph of a Ti–Si–N film deposited by PEALD at 350 °C, showing a much more homogeneous contrast with no clearly resolved grains at the ~10 nm scale.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Polycrystalline with clear grain contrast and lattice fringes.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Silicon addition (≈11 at.%) completely suppresses crystallization, transforming the film from polycrystalline (a) to fully amorphous (b).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Fully amorphous – completely featureless, no grains or lattice fringes at 10 nm scale.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_41_fig_3.jpg","caption":"FIG. 3. High resolution TEM image showing a $20\\mathrm{nm}$ thick $\\mathrm{Al}_2\\mathrm{O}_3$ film on $c$ -Si after a $30\\mathrm{min}$ annealing at $425^{\\circ}\\mathrm{C}$ in a $\\mathrm{N}_2$ environment.","id":"train/atomic-layer-deposition/experimental-usecase/41/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/41/fig_3","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/Hoex et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":536,"height":531,"image_format":"jpeg","image_sha256":"5d9012c95bf5492c6dc3304929933e6eea400d9afb009088432dc2f226910b79","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":1,"width":529,"height":529}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a cross-sectional view of a layered material structure, including Al2O3, SiOx, and c-Si from top to bottom.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The colors of the layers indicate the density which say something on the different materials.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The crystallic Si substrate shows ordered dots in a constant array, whereas the alumina layer is unorganized.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The crystaline Si has the highest density, followed by the alumina, with the silicon oxide having the lowest density.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The silicon oxide thickness is around 2 nm.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_42_figure_4.jpg","caption":"Figure 4. Scanning electron micrographs of deposited copper films. (a) Plan view of copper nanoparticles deposited using a 1 s pulse length. (b) Plan view of crystalline copper deposited using a 4 s pulse length. (c) Plan view of crystalline copper deposited using a 6 s pulse length. (d) A profile of crystalline copper deposited using a 6 s pulse length.","id":"train/atomic-layer-deposition/experimental-usecase/42/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/42/figure_4","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/Coyle et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1130,"height":839,"image_format":"jpeg","image_sha256":"7856f25246500ea3766152283e6c024866284887da783e38230ca64bb98f27e2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":558,"height":412},{"panel_id":"b","x":576,"y":0,"width":554,"height":412},{"panel_id":"c","x":0,"y":427,"width":559,"height":412},{"panel_id":"d","x":578,"y":427,"width":552,"height":412}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_44_figure_1.jpg","caption":"Figure 1. FE-SEM images of surface morphology of ALD thin films synthesized at $170^{\\circ}\\mathrm{C}$ for (a) 700 cycles (sample # PbTe-9), (b) 3000 cycles (sample # PbTe-11), (c) 1000 cycles (sample # PbSe-9), and (d) 4000 cycles (sample # PbSe-11). Sample numbers are indicated by $*$ in Tables I and II.","id":"train/atomic-layer-deposition/experimental-usecase/44/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/44/figure_1","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/Zhang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1005,"height":753,"image_format":"jpeg","image_sha256":"6724c13befd60da85a625f4ab67a73fa0b3df4eb6f6ac09638ae163c7930417c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":0,"width":500,"height":378},{"panel_id":"b","x":505,"y":0,"width":500,"height":380},{"panel_id":"c","x":3,"y":377,"width":504,"height":368},{"panel_id":"d","x":505,"y":377,"width":496,"height":370}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_44_figure_2.jpg","caption":"Figure 2. FE-SEM micrograph showing a cross-sectional view of cleavage side of ALD at $170^{\\circ}\\mathrm{C}$ ; (a) 3000 cycles (sample # PbTe-11, Table I), and (b) 4000 cycles (sample # PbSe-12, Table II).","id":"train/atomic-layer-deposition/experimental-usecase/44/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/44/figure_2","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/Zhang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1005,"height":375,"image_format":"jpeg","image_sha256":"36984da539b931b555851216eba63f15ff473edab18017c1fe4449e4dd63dce1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":0,"width":504,"height":374},{"panel_id":"b","x":505,"y":3,"width":496,"height":365}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_44_figure_3.jpg","caption":"Figure 3. TEM cross-sectional images of ALD deposited PbTe film (sample # PbTe-9, Table I); (a) low magnification overview of the film, nucleating in a Volmer-Weber type of island growth mode, and (b) high resolution microstructure of individual PbTe crystallite.","id":"train/atomic-layer-deposition/experimental-usecase/44/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/44/figure_3","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/Zhang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1003,"height":500,"image_format":"jpeg","image_sha256":"9beb0e5035c4b621004130d79d54f455195ccb924bb02b231364e82fe3d63e6b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":6,"width":497,"height":487},{"panel_id":"b","x":504,"y":2,"width":497,"height":491}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_44_figure_5.jpg","caption":"Figure 5. HAADF-STEM image and the corresponding EDS elemental maps of Pb, Se and Te from individual films of ALD PbTe and ALD PbSe. The orange window marks the area mapped and the yellow window represents the drift correction are used.","id":"train/atomic-layer-deposition/experimental-usecase/44/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/44/figure_5","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/Zhang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":670,"height":817,"image_format":"jpeg","image_sha256":"29c524f864a4c38446cdcd31464990067e30d1d5a65a2320783e427cb140bae8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":370},{"panel_id":"b","x":8,"y":395,"width":660,"height":423}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_44_figure_6.jpg","caption":"Figure 6. FE-SEM images of basic unit cell for nanolaminate superlattice structures consisting of 5000 ALD cycles (PbTe) plus 4000 cycles (PbSe) on top of it (a) surface morphology (b) cross-sectional view.","id":"train/atomic-layer-deposition/experimental-usecase/44/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/44/figure_6","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/Zhang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1172,"height":430,"image_format":"jpeg","image_sha256":"ff391a30f50910c74f074236efc041d5d02d29a4ee5638624624484298d94f08","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":1,"width":585,"height":427},{"panel_id":"b","x":592,"y":1,"width":576,"height":422}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_44_figure_7.jpg","caption":"Figure 7. HAADF-STEM image and the corresponding EDS elemental maps of Pb, Se and Te from the PbTe/PbSe clearly delineates two distinct layers of a basic nanolaminate composite with ALD PbSe on top of ALD PbTe. The orange window marks the area mapped and the yellow window represents the drift correction are used.","id":"train/atomic-layer-deposition/experimental-usecase/44/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/44/figure_7","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/Zhang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":681,"height":328,"image_format":"jpeg","image_sha256":"d0fa443cadd3d73c8ae95e5ce6ebdf5d2c0560e0ff01b8f1cf9d82549fc12cab","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":679,"height":325}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_50_fig_8.jpg","caption":"Fig. 8 Transmission electron microscopy images: (a) bright-field (BF) TEM of two ZnO:B films $(m = 30$ and $m = 19)$ and a ZnO:Al film $(m = 18)$ ; and (b) high-angle annular dark field (HAADF) STEM images of ZnO:B $(m = 30)$ and ZnO:Al $(m = 18)$ . The B- and Al-doped layers are indicated by arrows.","id":"train/atomic-layer-deposition/experimental-usecase/50/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/50/fig_8","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/Garcia-Alonso et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":878,"height":428,"image_format":"jpeg","image_sha256":"8932befd3a2b775e90de975c4e260737ed791e7034cd97f56b6ac367fced669f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":14,"width":870,"height":210},{"panel_id":"b","x":9,"y":256,"width":867,"height":163}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_54_figure_9.jpg","caption":"Figure 9. SEM images of the Cu-TiN-Si stack: (a) the smooth as-deposited Cu film and (b) the roughened Cu film after annealing at $700^{\\circ}\\mathrm{C}$ . (c) The as-deposited closed Cu film has become discontinuous after annealing, exposing areas of the underlying surface.","id":"train/atomic-layer-deposition/experimental-usecase/54/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/54/figure_9","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":608,"height":1820,"image_format":"jpeg","image_sha256":"6e44fc1ad59251918225a336d7129c084ca0941cdc405e7e29653487bcdfa45e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":15,"width":600,"height":583},{"panel_id":"b","x":8,"y":630,"width":600,"height":574},{"panel_id":"c","x":8,"y":1237,"width":600,"height":583}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_57_figure_2.jpg","caption":"Figure 2. (a) Cross-sectional field-emission scanning electron microscopy (FESEM) images of CsI films deposited on Si with 400 cycles (left) and 3300 cycles (right). (b) Top-down FESEM images of CsI films deposited on Si with 300 cycles at different deposition temperatures $T_{\\mathrm{Dep}}$ . (c) GIXRD patterns of CsI films on Si deposited at different temperatures. CsI reference pattern ICDD 6-311 is indicated as red bars. (d) Relative atomic force microscopy (AFM) roughness $R_{\\mathrm{q}}$ calculated as absolute $R_{\\mathrm{q}}$ divided by the film thickness. (e) AFM images of CsI films deposited at 150 and $250^{\\circ}\\mathrm{C}$ . Unless otherwise evident, data are from films deposited with 300 cycles at $150^{\\circ}\\mathrm{C}$ , pulse durations of 1.5 and $0.5\\mathrm{s}$ for Cs(btsa) and $\\mathrm{SnI_4}$ , respectively, and $1.0\\mathrm{s}$ purge durations.","id":"train/atomic-layer-deposition/experimental-usecase/57/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/57/figure_2","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"stacked spectra chart"},{"panel_id":"d","label":"line chart"},{"panel_id":"e","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/Weia et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1178,"height":914,"image_format":"jpeg","image_sha256":"23b99e485fb98f6e1465fde5708f13e6dc925739fcd47d0b5aa9f1121d2da1b5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":34,"y":1,"width":637,"height":198},{"panel_id":"b","x":32,"y":242,"width":642,"height":219},{"panel_id":"c","x":717,"y":1,"width":462,"height":437},{"panel_id":"d","x":698,"y":425,"width":473,"height":292},{"panel_id":"e","x":717,"y":724,"width":456,"height":181}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays SEM images of CsI films deposited at various temperatures.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows SEM images of CsI films deposited at different temperatures.\"},{\"panel_id\":\"c\",\"text\":\"The figure presents Grazing Incidence X-ray Diffraction (GIXRD) patterns for Cesium Iodide (CsI) films deposited on Silicon at temperatures ranging from 150°C to 350°C. All deposited films exhibit diffraction peaks that perfectly match the reference pattern for cubic CsI (ICDD 6-311)\"},{\"panel_id\":\"d\",\"text\":\"This figure plots the relative surface roughness (Rq normalized by film thickness) of ALD-grown films against deposition temperature, showing roughness decreases to a minimum around 225-250°C before increasing at higher temperatures.\"},{\"panel_id\":\"e\",\"text\":\"The figure compares AFM images of CsI films deposited at different temperatures and thicknesses.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"| Temperature (°C) | 2θ (°) | Assigned Plane |\\n|-----------------|-------|----------------|\\n| 150 | 28.5 | (200) |\\n| 150 | 33.0 | (211) |\\n| 150 | 36.0 | (220) |\\n| 150 | 47.5 | (310) |\\n| 150 | 56.0 | (222) |\\n| 150 | 69.0 | (321) |\"},{\"panel_id\":\"e\",\"text\":\"| Deposition temperature (°C) | Relative roughness Rq (%) |\\n|-----------------------------|---------------------------|\\n| 150 | 5 |\\n| 170 | 7 |\\n| 190 | 10 |\\n| 210 | 15 |\\n| 230 | 22 |\\n| 250 | 35 |\\n| 270 | 55 |\\n| 290 | 80 |\\n| 305 | 95 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Roughness decreases with temperature up to ~225°C, then increases. The minimum occurs due to enhanced adatom surface diffusion at moderate temperatures, which smoothens growth, while higher temperatures may induce excessive decomposition or 3D islanding, increasing roughness.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the minimal roughness at 225°C is beneficial for a gate dielectric. A smoother film reduces interfacial scattering and charge trapping, improving channel mobility and threshold voltage stability. However, the electrical quality of the dielectric itself must also be verified at this temperature.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cesium Iodide (CsI). The peaks align perfectly with the ICDD 6-311 reference bars for CsI.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To save thermal budget/energy. Since there is no gain in crystal quality at 350°C, the lower temperature is preferred to protect the substrate and reduce costs.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_57_figure_5.jpg","caption":"Figure 5. Panels (a), (c), (e), (g), and (i) show top-down SEM images of samples where $\\mathrm{PbI}_2$ was deposited on top of the CsI film. Panels (b), (d), (f), (h), and (j) show cross-sectional SEM images of the same samples. Panel (k) shows a cross-sectional FESEM image of a hole with 10:1 AR in a patterned Si substrate. Similar to the other samples, also on this sample, CsI film was deposited first, followed by $\\mathrm{PbI}_2$ deposition. CsI films (100 nm) were deposited at $150^{\\circ}\\mathrm{C}$ with 300 cycles. The pulse durations were $1.5\\mathrm{s}$ for $\\mathrm{Cs(btsa)}$ and $1.0\\mathrm{s}$ for $\\mathrm{SnI}_4$ and purge durations were $1.0\\mathrm{s}$ . In the $\\mathrm{PbI}_2$ deposition, the durations of the precursor pulses were 0.8 and $2.0\\mathrm{s}$ for $\\mathrm{Pb(btsa)}_2$ and $\\mathrm{SnI}_4$ , respectively, whereas purge durations were $1.0\\mathrm{s}$ .","id":"train/atomic-layer-deposition/experimental-usecase/57/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/57/figure_5","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"},{"panel_id":"g","label":"image panel"},{"panel_id":"h","label":"image panel"},{"panel_id":"i","label":"image panel"},{"panel_id":"j","label":"image panel"},{"panel_id":"k","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/Weia et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":842,"height":964,"image_format":"jpeg","image_sha256":"b488eaf5047659f74d1336b23bd3351b8932df72cf6a01b474631bc6070f40f4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":12,"y":3,"width":270,"height":197},{"panel_id":"b","x":287,"y":0,"width":276,"height":206},{"panel_id":"c","x":4,"y":195,"width":274,"height":201},{"panel_id":"d","x":283,"y":199,"width":280,"height":193},{"panel_id":"e","x":4,"y":395,"width":282,"height":191},{"panel_id":"f","x":285,"y":387,"width":280,"height":205},{"panel_id":"g","x":4,"y":585,"width":276,"height":191},{"panel_id":"h","x":283,"y":585,"width":280,"height":195},{"panel_id":"i","x":6,"y":780,"width":276,"height":180},{"panel_id":"j","x":285,"y":778,"width":278,"height":186},{"panel_id":"k","x":561,"y":1,"width":276,"height":963}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_64_fig_3.jpg","caption":"FIG. 3. AFM images of $2\\mu \\mathrm{m}\\times 2\\mu \\mathrm{m}$ regions of (a) a $45\\mathrm{-nm}$ platinum film grown at $250^{\\circ}\\mathrm{C}$ with a total $\\mathbb{Z}$ -range of $6.1~\\mathrm{nm}$ and b) a $50 - \\mathrm{nm}$ platinum film grown at $300^{\\circ}\\mathrm{C}$ with a total $\\mathbb{Z}$ -range of $9.7~\\mathrm{nm}$ .The $\\mathbb{Z}$ -scale for both images spans $10\\mathrm{nm}$","id":"train/atomic-layer-deposition/experimental-usecase/64/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/64/fig_3","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"64","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":603,"height":1294,"image_format":"jpeg","image_sha256":"d2ff9a89360322c3f7ec8aedb2a56fc203b7813bf8a54e5fddcf4e9a045eceb7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":603,"height":607},{"panel_id":"b","x":0,"y":659,"width":603,"height":602}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"AFM image of a 45-nm platinum film grown at 250 °C over a 2 µm × 2 µm region, with a z-range of 6.1 nm and RMS roughness of 0.8 nm. The surface shows relatively small grains.\"},{\"panel_id\":\"b\",\"text\":\"AFM image of a 50-nm platinum film grown at 300 °C over a 2 µm × 2 µm region, with a z-range of 9.7 nm and RMS roughness of 1.2 nm. The surface shows larger grains and increased roughness compared to the 250 °C film.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Parameter | Value |\\n|---|---|\\n| Film thickness | 45 nm |\\n| Deposition temperature | 250 °C |\\n| Scan area | 2 µm × 2 µm |\\n| Z-range | 6.1 nm |\\n| RMS surface roughness | 0.8 nm |\\n| Grain characteristics | Smaller grains compared to 300 °C film |\"},{\"panel_id\":\"b\",\"text\":\"| Parameter | Value |\\n|---|---|\\n| Film thickness | 50 nm |\\n| Deposition temperature | 300 °C |\\n| Scan area | 2 µm × 2 µm |\\n| Z-range | 9.7 nm |\\n| RMS surface roughness | 1.2 nm |\\n| Grain characteristics | Larger grains compared to 250 °C film |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the deposition temperature to 300 °C results in larger grain sizes and slightly higher surface roughness compared to films grown at 250 °C. However, the films remain smoother than similar films deposited using air as the oxygen source in previous studies. This improvement is likely due to the higher nucleation density achieved with the higher oxygen partial pressure, which promotes more uniform film growth and reduces roughness.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The RMS surface roughness increases from 0.8 nm at 250 °C to 1.2 nm at 300 °C.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"250 °C (45 nm film): Smaller grains, RMS roughness 0.8 nm, z-range 6.1 nm, 300 °C (50 nm film) Larger grains, RMS roughness 1.2 nm, z-range 9.7 nm\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_9_d0c00dec3627c492e7e1f2f448ee4f5d8fa71fbdb9057d123f4c3d482cdd5f4a.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/9/d0c00dec3627c492e7e1f2f448ee4f5d8fa71fbdb9057d123f4c3d482cdd5f4a","sample_id":"atomic-layer-deposition/experimental-usecase/9/d0c00dec3627c492e7e1f2f448ee4f5d8fa71fbdb9057d123f4c3d482cdd5f4a","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/9/images/d0c00dec3627c492e7e1f2f448ee4f5d8fa71fbdb9057d123f4c3d482cdd5f4a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/9/images/d0c00dec3627c492e7e1f2f448ee4f5d8fa71fbdb9057d123f4c3d482cdd5f4a.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/9/H.C.M. Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"not_found"},"width":570,"height":642,"image_format":"jpeg","image_sha256":"48cec1748865ecfa809582df6e1268e984b131af40b0c6ae2cd6ba4c2d67d8de","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":91,"y":2,"width":232,"height":214},{"panel_id":"b","x":372,"y":2,"width":199,"height":213},{"panel_id":"c","x":94,"y":233,"width":226,"height":195},{"panel_id":"d","x":372,"y":232,"width":198,"height":196},{"panel_id":"e","x":94,"y":442,"width":221,"height":197},{"panel_id":"f","x":372,"y":444,"width":197,"height":194}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This panel shows a cross-sectional electron microscopy image of a nanoscale device structure, illustrating excellent thickness control and conformal film coverage on high-aspect-ratio features such as metal and high-κ regions on silicon. It highlights the capability of low-temperature ALD to uniformly coat complex 3D architectures at the ~100 nm scale.\"},{\"panel_id\":\"b\",\"text\":\"This schematic illustrates the discrete, self-limiting nature of atomic layer deposition, where film thickness increases in well-defined nanometer- or sub-nanometer-scale steps with each process cycle. It emphasizes precise thickness control arising from the sequential, surface-controlled reaction mechanism.\"},{\"panel_id\":\"c\",\"text\":\"This panel presents an SEM image of a dense array of high-aspect-ratio nanostructures uniformly coated by ALD. The image demonstrates excellent conformality and uniformity over large areas and complex geometries, which is difficult to achieve with conventional deposition techniques.\"},{\"panel_id\":\"d\",\"text\":\"This panel shows a transmission electron microscopy image of a single, elongated nanostructure uniformly coated along its entire length. The consistent coating thickness confirms the ability of ALD to provide conformal coverage on isolated, curved, and one-dimensional nanoscale objects.\"},{\"panel_id\":\"e\",\"text\":\"This cross-sectional SEM image highlights multilayer film growth on a structured substrate, showing sharp interfaces and uniform layer thickness even within rough or porous regions. The image underscores the advantage of low-temperature ALD for depositing high-quality films without damaging underlying materials.\"},{\"panel_id\":\"f\",\"text\":\"This panel demonstrates a flexible electronic device incorporating ALD-processed layers, bent without mechanical failure. It illustrates how low-temperature, conformal ALD enables integration of functional thin films into flexible and wearable electronic applications.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Discrete process step|Nanometer-level thickness (schematic)|\\n|----------------------|--------------------------------------|\\n|0|~0 nm|\\n|1|Increasing|\\n|2|Increasing|\\n|3|Increasing|\\n|4|Increasing|\\n|...|...|\\n|N|~Linear increase|\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"GaP nanowires, CIGS absorber layers, and FinFET semiconductor fins.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure illustrates the need for highly conformal, pinhole-free thin films in advanced technologies like FinFET transistors, nanowire devices, CIGS solar cells, and flexible OLEDs. These structures often involve intricate geometries or temperature-sensitive substrates, making precise, low-temperature deposition critical. Such regulated coatings directly influence device performance, reliability, and scalability.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"For constant electrical performance, FinFET fins must have homogeneous coverage on three-dimensional geometries, For accurate surface passivation, GaP nanowires require nanoscale ALD layers, Rough CIGS absorber layer — required pinhole-free buffer layers for optimal solar cell operation, Flexible OLED substrates — depend on low-temperature, mechanically stable films.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_10_figure_2.jpg","caption":"Figure 2. (a) Photograph of a 4-in. Si(100) wafer covered with $10\\mathrm{nm}$ of a-Si:H with the letters $\\mathrm{^{\\circ}TU / e^{\\circ}}$ prepared using the direct-write ALD process of $\\mathrm{In}_2\\mathrm{O}_3{:}\\mathrm{H}$ . The number of ALD cycles was 400 and the thickness of the $\\mathrm{In}_2\\mathrm{O}_3{:}\\mathrm{H}$ was $\\sim 35 \\mathrm{nm}$ . (b) XPS signals for the $\\mathrm{In}3\\mathrm{d}_{5 / 2}$ and In $3\\mathrm{d}_{3 / 2}$ binding energy measured for two distinctive points inside (black) and outside (red) the patterned area.","id":"train/atomic-layer-deposition/simulation-usecase/10/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/10/figure_2","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":667,"height":278,"image_format":"jpeg","image_sha256":"fce7ca7cce68a711e92532e21f236dc132980edf45f26a990b2760cfe8d55435","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":310,"height":232},{"panel_id":"b","x":311,"y":4,"width":356,"height":267}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Photograph of a 4-inch Si(100) wafer coated with 10 nm a-Si:H, showing the letters \\\"TU/e\\\" patterned by direct-write ALD of In2O3:H (approximately 35 nm thick after 400 ALD cycles), demonstrating successful area-selective deposition at macroscopic scale.\"},{\"panel_id\":\"b\",\"text\":\"XPS spectra of the In 3d region comparing activated (black) and non-activated (red) areas. The activated area shows strong In 3d5/2 (approximately 444.5 eV) and In 3d3/2 (approximately 452 eV) peaks, while the non-activated area shows negligible indium signal, confirming excellent selectivity.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Binding energy (eV) | activated area (10^5 counts/s) | non-activated area (10^5 counts/s) |\\n|---|---|---|\\n| 439 | 0.05 | 0.05 |\\n| 441 | 0.10 | 0.05 |\\n| 442 | 0.15 | 0.05 |\\n| 443 | 0.50 | 0.05 |\\n| 444 | 1.80 | 0.05 |\\n| 445 | 2.90 | 0.05 |\\n| 446 | 1.60 | 0.05 |\\n| 447 | 0.50 | 0.05 |\\n| 448 | 0.20 | 0.05 |\\n| 449 | 0.15 | 0.05 |\\n| 450 | 0.30 | 0.05 |\\n| 451 | 1.00 | 0.05 |\\n| 452 | 1.90 | 0.05 |\\n| 452.5 | 2.10 | 0.05 |\\n| 453 | 1.80 | 0.05 |\\n| 454 | 0.70 | 0.05 |\\n| 455 | 0.25 | 0.05 |\\n| 457 | 0.10 | 0.05 |\\n| 459 | 0.10 | 0.05 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"It compares XPS spectra from two locations on the same sample.\\n\\n, Black curve: activated area\\n\\n, Red curve: non-activated area\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The activated area shows strong peaks, while the non-activated area stays close to the baseline across the binding-energy window. This indicates that indium-containing material is present (or much thicker) only on the activated region. In other words, the data support strong area selectivity in the deposition process.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"XPS is surface-sensitive; if nucleation had occurred on the non-activated area, even a thin initial film would typically produce detectable indium-related features. The near-baseline response implies the surface remains largely uncovered by the deposited In₂O₃:H (or is below detection / extremely thin). This is consistent with a long nucleation delay on the non-activated, H-terminated Si surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The optical photo shows that a macroscopic pattern is produced, but it does not by itself prove chemical selectivity. The XPS comparison verifies that the patterned regions differ strongly in composition (indium signal present vs absent/very low). Together, they provide both a visual and chemical validation of selective growth suitable for direct-write patterning.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_10_figure_3.jpg","caption":"Figure 3. (a) Photograph of $\\mathrm{In}_2\\mathrm{O}_3\\cdot \\mathrm{H}$ lines being 3.0 and $0.8\\mathrm{mm}$ wide as prepared by the direct-write ALD process with 400 cycles. XPS line scans for the patterns depicted in (a) showing the atomic percentages related to (b) $\\mathrm{In}_2\\mathrm{O}_3$ (In $3\\mathrm{d}_5$ $\\mathrm{I}_2$ and O 1s) and (c) the Si substrate (Si 2p).","id":"train/atomic-layer-deposition/simulation-usecase/10/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/10/figure_3","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":511,"height":881,"image_format":"jpeg","image_sha256":"0600ff8fe2a3f6dd1d547d24d35e9a5794b03425f27c5a3f61332c6a58398ae6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":3,"y":519,"width":504,"height":363},{"panel_id":"b","x":0,"y":208,"width":507,"height":308},{"panel_id":"a","x":85,"y":-1,"width":425,"height":208}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Optical photo of a patterned/printed region on a substrate, used to show a visible contrast between deposited and non-deposited areas along a line.\"},{\"panel_id\":\"b\",\"text\":\"EDX line-scan composition across the pattern: In and O (from In₂O₃:H) atomic percentages vs distance (mm). In and O are high on the deposited regions (near the ends of the scan) and drop to ~0 over the non-deposited middle region, indicating strong lateral selectivity.\"},{\"panel_id\":\"c\",\"text\":\"EDX line-scan Si atomic percentage vs distance. Si is low where In/O are high (film-covered regions) and high in the central region where In/O are near zero (exposed substrate), complementing panel (b).\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"| Distance (mm) | In (Atomic %) | O (In2O3:H) (Atomic %) |\\n|---|---|---|\\n| 0.0 | 8.0 | 12.0 |\\n| 0.8 | 31.0 | 51.5 |\\n| 1.6 | 31.0 | 51.0 |\\n| 2.4 | 31.0 | 55.0 |\\n| 3.2 | 25.0 | 41.0 |\\n| 4.0 | 1.5 | 2.0 |\\n| 4.8 | 0.0 | 0.0 |\\n| 5.6 | 0.0 | 0.0 |\\n| 6.4 | 0.0 | 0.0 |\\n| 7.2 | 0.0 | 0.0 |\\n| 8.0 | 0.0 | 0.0 |\\n| 8.8 | 0.0 | 0.0 |\\n| 9.6 | 0.0 | 0.0 |\\n| 10.4 | 0.0 | 0.0 |\\n| 11.2 | 0.0 | 0.0 |\\n| 12.0 | 0.0 | 0.0 |\\n| 12.8 | 0.0 | 0.0 |\\n| 13.6 | 0.0 | 0.0 |\\n| 14.4 | 0.0 | 0.5 |\\n| 15.2 | 14.0 | 24.0 |\\n| 16.0 | 30.0 | 51.0 |\\n| 16.8 | 12.0 | 20.0 |\\n| 17.6 | 0.5 | 0.5 |\\n| 18.4 | 0.5 | 0.5 |\"},{\"panel_id\":\"c\",\"text\":\"| Distance (mm) | Si (Atomic %) |\\n|---|---|\\n| 0.0 | 47.0 |\\n| 0.8 | 2.0 |\\n| 1.6 | 2.0 |\\n| 2.4 | 2.0 |\\n| 3.2 | 13.0 |\\n| 4.0 | 66.0 |\\n| 4.8 | 72.0 |\\n| 5.6 | 73.0 |\\n| 6.4 | 73.0 |\\n| 7.2 | 73.5 |\\n| 8.0 | 74.0 |\\n| 8.8 | 73.0 |\\n| 9.6 | 75.0 |\\n| 10.4 | 74.0 |\\n| 11.2 | 74.0 |\\n| 12.0 | 74.0 |\\n| 12.8 | 74.5 |\\n| 13.6 | 74.0 |\\n| 14.4 | 73.0 |\\n| 15.2 | 35.0 |\\n| 16.0 | 3.0 |\\n| 16.8 | 37.0 |\\n| 17.6 | 72.0 |\\n| 18.4 | 73.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It quantifies the lateral chemical contrast over a macroscopic distance, not just a single point. The steep transitions between In/O-rich and Si-rich regions provide a practical measure of pattern edge sharpness and selectivity. This supports claims that the process can produce patterned films over device-relevant length scales.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"(b) Atomic % of In and O (In₂O₃:H) vs distance\\n\\n, (c) Atomic % of Si vs distance\\n\\n, x-axis (both): distance (mm) along the measured line scan\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies that nucleation (and thus measurable film growth) is strongly suppressed on the non-activated surface over that lateral region. If significant nucleation had occurred, In and O would remain detectible across a wider span. The sharp localization of In/O is consistent with a large nucleation delay difference between activated and non-activated areas.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Where In and O are high in (b), Si is low in (c), indicating those regions are covered by the In₂O₃:H film. In the middle section of the scan, In and O drop to ~0 while Si rises to a high level, indicating exposed substrate. This complementary behavior supports strong spatial selectivity of the deposition.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_10_figure_6.jpg","caption":"Figure 6. Pattern prepared by direct-write ALD of a $35~\\mathrm{nm}$ thick $\\mathrm{In}_2\\mathrm{O}_3{:}\\mathrm{H}$ film on a flexible stainless steel foil covered with $20~\\mathrm{nm}$ of a-Si:H. This serves as a first demonstrator of the capability of the direct-write ALD process for large-area and flexible electronics.","id":"train/atomic-layer-deposition/simulation-usecase/10/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/10/figure_6","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":500,"height":564,"image_format":"jpeg","image_sha256":"4b20731074011a398d81c81ee9a2f99a9004cf086922508ad157a68e195141a0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":499,"height":559}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Photograph of a gloved hand holding a patterned, translucent thin-film sample showing the “TU/e” logo as a visible contrast feature, consistent with selective deposition/patterning of a transparent conductive oxide film.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"A gloved hand holding a thin-film sample\\n\\n, A visible “TU/e” patterned region on the sample\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The visible contrast indicates that the film (or its thickness/composition) differs between the patterned and non-patterned regions. In this paper’s context, that is consistent with selective deposition occurring only on the activated areas. The pattern being visible at macroscopic scale suggests the selectivity is strong enough to be observed without microscopy.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Many oxide TCO films transmit visible light when sufficiently thin and smooth, so the substrate remains visible through them. At the same time, differences in thickness, refractive index, or free-carrier absorption between coated and uncoated regions can create a noticeable color/contrast. That makes patterned regions detectable even when the film is broadly transparent.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It provides an immediate demonstration that the method can produce large-area, user-visible patterns, not just nanoscale selectivity at a single test spot. This supports potential use in patterned TCO features for electronics and optoelectronics.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_2.jpg","caption":"Figure 2: Transmission electron microscopic image of $\\mathrm{Al}_2\\mathrm{O}_3$ -coated MWCNTs. The insert shows a cylindrical $\\mathrm{Al}_2\\mathrm{O}_3$ layer (A) coating a particular multi-walled CNTs and the multi walls (B) of this multi-walled nanotube.","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_2","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1003,"height":714,"image_format":"jpeg","image_sha256":"0d6438c34fb058f6b85450a4eaf82a6a7d6e396b5a5b1ce920859b7d987ca423","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":3,"width":995,"height":705}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_10.jpg","caption":"Fig. 10 - Snapshots of the flow field developed during the TMA exposure, inside the reactor chamber: a) 10 ms, b) 20 ms, c) 30 ms, d) 60 ms, after the start of the TMA exposure.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_10","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_10","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1178,"height":1358,"image_format":"jpeg","image_sha256":"6c39412697f22b0f1062c7f03197ee0f137631f0d957e5fa4bae43721c02574f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":14,"width":446,"height":610},{"panel_id":"b","x":722,"y":14,"width":456,"height":613},{"panel_id":"c","x":9,"y":697,"width":450,"height":606},{"panel_id":"d","x":727,"y":697,"width":439,"height":615}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_13.jpg","caption":"Fig. 13 - Snapshots of the flow field inside the reactor chamber: a) $10\\mathrm{ms}$ , b) $20\\mathrm{ms}$ , c) $60\\mathrm{ms}$ , d) $200\\mathrm{ms}$ after the start of the $\\mathrm{H}_2\\mathrm{O}$ pulse.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_13","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_13","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1172,"height":1339,"image_format":"jpeg","image_sha256":"98154f0bed104f15681226dc6f6f91fc537d910ee8e0427bfe4ec0c240dad330","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":10,"width":441,"height":603},{"panel_id":"b","x":727,"y":12,"width":445,"height":611},{"panel_id":"c","x":8,"y":670,"width":441,"height":608},{"panel_id":"d","x":704,"y":670,"width":450,"height":604}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_5.jpg","caption":"Fig. 5 - a) Flow field predictions for the process parameters of Table 1, b) flow field predictions at 30 sccm top inlet flow.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_5","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1000,"height":622,"image_format":"jpeg","image_sha256":"bea7e2eaef9d2bb1301f1ace9d021449c996723da21cc894e40aebd9b20ed6bf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":8,"width":392,"height":543},{"panel_id":"b","x":602,"y":8,"width":398,"height":544}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_36_figure_1.jpg","caption":"Figure 1. Surface morphologies observed using SEM and AFM: (a, e) bare Ti substrate, (b, f) ODTS-coated Ti, (c, g) ODPA-coated Ti, and (d, h) DDPA-coated Ti. Inset images show the WCA of the samples.","id":"train/atomic-layer-deposition/simulation-usecase/36/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/36/figure_1","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"},{"panel_id":"g","label":"image panel"},{"panel_id":"h","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/Seunggi Seo et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1067,"height":584,"image_format":"jpeg","image_sha256":"5d800116015d9e34fb62598191b348d1e843b73c76818e6a046e3dcee2aadb4d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":5,"width":265,"height":278},{"panel_id":"b","x":267,"y":3,"width":268,"height":280},{"panel_id":"c","x":532,"y":6,"width":268,"height":277},{"panel_id":"d","x":800,"y":0,"width":266,"height":288},{"panel_id":"e","x":6,"y":317,"width":260,"height":265},{"panel_id":"f","x":271,"y":311,"width":260,"height":269},{"panel_id":"g","x":533,"y":311,"width":262,"height":269},{"panel_id":"h","x":795,"y":313,"width":269,"height":269}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The SEM image shows a smooth bare Ti surface with minimal visible texture; a water-contact-angle inset is included.\"},{\"panel_id\":\"b\",\"text\":\"The SEM image of ODTS-coated Ti shows a granular surface texture, with a corresponding WCA inset.\"},{\"panel_id\":\"c\",\"text\":\"The SEM image of ODPA-coated Ti exhibits a relatively uniform morphology compared with (b).\"},{\"panel_id\":\"d\",\"text\":\"The SEM image of DDPA-coated Ti shows a fine, homogeneous surface texture; a WCA inset is included.\"},{\"panel_id\":\"e\",\"text\":\"The AFM image of bare Ti shows limited height contrast and sparse surface features.\"},{\"panel_id\":\"f\",\"text\":\"The AFM image of ODTS-coated Ti shows a higher density of bright surface protrusions.\"},{\"panel_id\":\"g\",\"text\":\"The AFM image of ODPA-coated Ti shows many small, closely spaced nanoscale features.\"},{\"panel_id\":\"h\",\"text\":\"The AFM image of DDPA-coated Ti shows a uniform distribution of nanoscale features, with a displayed height scale up to ~20 nm.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"},{\"panel_id\":\"h\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"DDPA seems to form a more homogeneous layer compared with the other coatings, resulting in a fine and consistent texture. This uniformity probably helps achieve more predictable surface chemistry and potentially better coverage. It's likely why the WCA inset might differ from the granular ODTS one — smoother, more even coatings often give different wetting behavior.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The bare Ti substrate appears quite smooth in the SEM, with minimal surface texture or defects visible at the 1 μm scale. This clean, flat morphology is what you'd expect from a polished or etched metal prior to functionalization. It's a good baseline for comparing how the coatings alter the surface.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The AFM highlights a higher density of bright protrusions that correspond to elevated nanoscale structures. These likely stem from the way ODTS molecules assemble or aggregate during coating. It's noticeably rougher than the bare substrate, which suggests the coating introduces significant topography.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Much rougher — shows clear granular clusters instead of the smooth appearance of bare Ti.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_5_figure_4.jpg","caption":"Figure 4. (a,b) Top-view SEM image of 35 EBID $\\mathrm{SiO_2}$ seed layers with an area of $500 \\times 500 \\mathrm{nm}^2$ and a thickness of $\\sim 1 \\mathrm{nm}$ . The high-magnification image in (b) shows a single pattern. (c,d) Top-view SEM image of a similar sample after 80 ALD cycles of $\\mathrm{ZnO}$ , deposited at 100 $^\\circ \\mathrm{C}$ . The high-magnification image in (d) shows a single pattern on which the polycrystalline $\\mathrm{ZnO}$ is clearly visible.","id":"train/atomic-layer-deposition/simulation-usecase/5/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/5/figure_4","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":561,"height":506,"image_format":"jpeg","image_sha256":"66ba9f113c5cbedc8874db7242a61c53aaa0e95aed54ff1bc987e34954506890","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":288,"y":9,"width":271,"height":221},{"panel_id":"b","x":7,"y":240,"width":268,"height":254},{"panel_id":"a","x":5,"y":6,"width":275,"height":226},{"panel_id":"d","x":289,"y":240,"width":270,"height":261}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Top-view SEM image of 35 EBID SiO2 seed layers with an area of 500 × 500 nm2 and a thickness of ∼1 nm before ZnO ALD deposition\"},{\"panel_id\":\"b\",\"text\":\"Top-view SEM image of 35 EBID SiO2 seed layers with an area of 500 × 500 nm2 and a thickness of ∼1 nm after ZnO ALD deposition\"},{\"panel_id\":\"c\",\"text\":\"High magnification of image a - before ALD ZnO\"},{\"panel_id\":\"d\",\"text\":\"High magnification of image b - after ALD ZnO\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"35 (Can be calculated from counting the patterns in images a and c)\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"EBID-grown SiO2 and the c-Si native oxide behave differently because of a high concentration of carbon impurities (∼26 at. %) that was measured for the SiO2 deposited by EBID. Besides OH groups that will obviously be present on a SiO2 surface, it has been suggested that electron irradiation of the TEOS ligands can lead to the formation of Si−C and Si−CH3 and Si−H bonds. The presence of these surface groups can inhibit DEZ adsorption, which can explain the slight difference in thickness and\\nmorphology that were observed between the ZnO deposited on EBID SiO2 and native SiO2. In addition, the thinner SiO2 EBID patterns may also not form a completely closed film.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The selectivity of the an ALD process can be calculated using the thickness as measured by the SE and the coverage as imaged by the SEM in the figure shown. After 80 ALD cycles of ZnO at a deposition temperature of 100 °C, the selectivity was measured to be 0.96 by SE and 0.83 by SEM.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_5_figure_5.jpg","caption":"Figure 5. (a) $\\mathrm{ZnO}$ nucleation curves on $\\mathrm{SiO}_2$ (closed symbols) and a- $\\mathrm{Si / H}$ (open symbols) as measured by in situ SE for two different temperatures: $100^{\\circ}\\mathrm{C}$ (square) and $250^{\\circ}\\mathrm{C}$ (circle). (b) Selectivity as a function of the number of ALD cycles, for deposition temperatures of $100^{\\circ}\\mathrm{C}$ (square) and $250^{\\circ}\\mathrm{C}$ (circles). The horizontal dotted line at $S = 1$ indicates perfect selectivity. Figure 7. Statistical density of $\\mathrm{ZnO}$ islands on the non-GA, after 80 $\\mathrm{ZnO}$ ALD cycles for different deposition temperatures. The insets show color-coded top-view SEM images of the NGA ( $500 \\times 500 \\mathrm{nm}^2$ ).","id":"train/atomic-layer-deposition/simulation-usecase/5/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/5/figure_5","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":669,"height":461,"image_format":"jpeg","image_sha256":"d32e18ca37d1218cbf64dfa5ad9bb51b3f2da4390a2d3e5487a058e6a84b665e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":69,"y":3,"width":599,"height":148},{"panel_id":"a","x":5,"y":148,"width":662,"height":309}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image panel shows four SEM images of ZnO islands at different deposition temperatures\"},{\"panel_id\":\"b\",\"text\":\"A line chart displaying the relationship between deposition temperature and the number of ZnO islands formed corresponding to the SEM images.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of ZnO islands | |\\n|---------------------|---|\\n| 150 | |\\n| 50 | |\\n| 20 | |\\n| 0 | |\"},{\"panel_id\":\"b\",\"text\":\"| Deposition temperature (°C) | Number of ZnO islands |\\n|-----------------------------|------------------------|\\n| 100 | 150 |\\n| 150 | 50 |\\n| 200 | 20 |\\n| 250 | 0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the same number of cycles, the density of ZnO islands is one order of magnitude larger at 100 °C, compared to the one at 250 °C. The higher density of nucleation at 100 °C seems consistent with undesired reactions with physisorbed precursor or coreactant molecules on the NGA. Because the rate of desorption of physisorbed species decreases with decreasing the deposition temperature, such physisorbed species may act as spurious nucleation sites and effectively decrease the selectivity of the process at low\\ndeposition temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. ALD of Al2O3 on graphene: lower deposition temperatures resulted in\\nhigher Al2O3 coverage on a chemically inert graphene substrate\\n2. Using self-assembled monolayers (SAM) as NGA and titanium as the GA, the selectivity for Al2O3 ALD is hampered by the physisorption of TMA on the SAM.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A statistical analysis of the density of ZnO islands was conducted on several 500 × 500 nm2 areas of the a-Si/H substrate in order to explain the decrease in selectivity for low deposition temperature\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_5_figure_8.jpg","caption":"Figure 8. (a,b) Cross-sectional TEM images of a $\\mathrm{ZnO}$ thin film that was selectively deposited (using 80 ALD cycles at $250^{\\circ}\\mathrm{C}$ ) on a $\\sim 1 \\mathrm{nm}$ thick $\\mathrm{SiO}_2$ EBID pattern with a width of $\\sim 500 \\mathrm{nm}$ . Low-magnification images show a pristine NGA outside the patterned GA, indicating that no $\\mathrm{ZnO}$ deposition occurred on these surfaces. (c) High-magnification images showing the patterned GA and (d) region $250 \\mathrm{nm}$ away from the pattern, confirming the selectivity of the process. (e,f) EDX elemental mappings of the same pattern at two different magnifications also show the presence of $\\mathrm{ZnO}$ on the $\\mathrm{SiO}_2$ GA and the absence of $\\mathrm{ZnO}$ on the a $\\mathrm{Si / H}$ NGA.","id":"train/atomic-layer-deposition/simulation-usecase/5/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/5/figure_8","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":558,"height":361,"image_format":"jpeg","image_sha256":"029880dd2b48c4a32992fef26feabddfee3225896469db869f0b0b785dcf0c57","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"d","x":175,"y":249,"width":164,"height":111},{"panel_id":"b","x":2,"y":156,"width":338,"height":89},{"panel_id":"c","x":3,"y":249,"width":170,"height":112},{"panel_id":"e","x":346,"y":150,"width":208,"height":93},{"panel_id":"f","x":345,"y":251,"width":210,"height":108},{"panel_id":"a","x":3,"y":5,"width":554,"height":145}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_1.jpg","caption":"Figure 1. TEM images of $\\mathrm{SiO}_2$ and $\\mathrm{Si}_3\\mathrm{N}_4$ ALD thin films.","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_1","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":522,"height":414,"image_format":"jpeg","image_sha256":"34c216f5300c05dfb823d1367eb4e29b4a6d9410766f57dce4c959787f4fb2ed","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":3,"width":518,"height":408}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_11_figure_5.jpg","caption":"Figure 5. Low-magnification HAADF-STEM image of a $\\mathrm{ZnO}$ covered NW together with high-magnification images of the top, center, and bottom regions (a) before and (b) after ALE. (c) Averaged $\\mathrm{ZnO}$ thicknesses as measured every micrometer along the NWs before and after ALE. The standard deviation of the measurements is taken as the error. (d) High-magnification TEM image of the $\\mathrm{ZnO}$ layer after the ALE process. Lattice fringes are observable up to the top surface, indicating that no surface amorphization occurs during the ALE process.","id":"train/atomic-layer-etching/experimental-usecase/11/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/11/figure_5","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"multiple scatter plot"},{"panel_id":"d","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plasma.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":564,"height":770,"image_format":"jpeg","image_sha256":"71d2b731daadebbf9536fcaa2ba9d63e4a1a76a3a092a3d0313dd2ed0bf8c8e4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":23,"y":519,"width":274,"height":229},{"panel_id":"b","x":292,"y":47,"width":260,"height":447},{"panel_id":"a","x":0,"y":59,"width":282,"height":461},{"panel_id":"d","x":280,"y":511,"width":287,"height":254}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a comparison of a sample before ALE (Atomic Layer Etching) process using scanning electron microscopy (SEM) images at different magnifications.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows a comparison of a sample after ALE (Atomic Layer Etching) process using scanning electron microscopy (SEM) images at different magnifications.\"},{\"panel_id\":\"c\",\"text\":\"The line chart compares the averaged thickness of the sample at different distances from the top before and after ALE treatment.\"},{\"panel_id\":\"d\",\"text\":\"The figure shows a high-resolution transmission electron microscopy (TEM) image of the sample's surface after ALE treatment.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"| Distance from Top (µm) | Thickness Before ALE (nm) | Thickness After ALE (nm) |\\n|-------------------------|---------------------------|---------------------------|\\n| 1 | 60 | 45 |\\n| 2 | 60 | 45 |\\n| 3 | 60 | 45 |\\n| 4 | 60 | 45 |\\n| 5 | 60 | 45 |\\n| 6 | 60 | 45 |\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the high-resolution TEM image of the top ZnO layers after the ALE process, lattice fringes are visible up to the top surface layer, demonstrating that the ZnO surface retains its crystallinity upon ALE. This result indicates that no significant damage or amorphization occurs during the ALE process. The observed isotropic etch profile and the fact that the ZnO surface is not damaged or amorphized are in line with a negligible role of ions in the ALE mechanism, illustrating that the O2 plasma ALE half-reaction is predominantly driven by radicals\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film thickness reduction (15 ± 2 nm) is comparable at all regions of the NW from the STEM-measured thickness differences (before and after ALE). An averaged EPC of 1.3 ± 0.2 Å is obtained\\nacross the full length of the NW. This EPC value is in excellent agreement with the EPC measured by in situ SE (i.e., 1.31 Å/cycle). The result clearly demonstrates the accurate etch control and the isotropic nature of the ALE process.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, TEM images.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. 3D substrate consisting of a regular array of vertical NWs\\n2. NWs are conformally covered with a 60 ± 2 nm thick polycrystalline ZnO layer\\n3. NWs are then subjected to 120 cycles of the ALE process at 250 °C\\n4. NWs are 7 μm long\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_22_figure_10.jpg","caption":"Figure 10. AFM height images of an exfoliated $\\mathrm{MoS}_2$ flake on a thermal Si oxide substrate. (a) Exfoliated flake prior to etching. (b) Exfoliated flake following 90 cycles of $\\mathrm{MoS}_2$ ALE at $200^{\\circ}\\mathrm{C}$ . (c) Exfoliated flake after an additional 90 cycles of $\\mathrm{MoS}_2$ ALE at $250^{\\circ}\\mathrm{C}$ . Initial etching at $200^{\\circ}\\mathrm{C}$ shows roughening of edge sites and removal of small regions across the surface. At $250^{\\circ}\\mathrm{C}$ , roughened edges are removed.","id":"train/atomic-layer-etching/experimental-usecase/22/figure_10","sample_id":"atomic-layer-etching/experimental-usecase/22/figure_10","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/Thermal Atomic Layer Etching of MoS2 Using MoF6 and H2O.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1073,"height":347,"image_format":"jpeg","image_sha256":"66406ba56b0d76d1d61c989a02b5343093cefd45a8247746d1dcf51b60f32301","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":11,"y":8,"width":327,"height":339},{"panel_id":"b","x":338,"y":6,"width":328,"height":340},{"panel_id":"c","x":663,"y":4,"width":410,"height":344}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_22_figure_8.jpg","caption":"Figure 8. TEM images of $\\mathrm{MoS}_2$ -coated CNT. (a) Prior to etching, the CNT displayed $\\sim 6 - 10$ layers of $\\mathrm{MoS}_2$ as depicted by the arrows. (b) After the first 60 cycles of etching, roughly $2\\mathrm{MoS}_2$ layers were removed. (c) Additional 60 etching cycles showed the removal of another 2 layers, leaving only 2-6 total $\\mathrm{MoS}_2$ layers on the CNT.","id":"train/atomic-layer-etching/experimental-usecase/22/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/22/figure_8","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/Thermal Atomic Layer Etching of MoS2 Using MoF6 and H2O.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":475,"height":947,"image_format":"jpeg","image_sha256":"33c53a9e234057d38066f44bbfab7700e3b774b912837d5e279621cb96325072","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":470,"height":316},{"panel_id":"b","x":2,"y":323,"width":469,"height":311},{"panel_id":"c","x":5,"y":641,"width":467,"height":306}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_30_fig_3.jpg","caption":"Fig. 3. Cross-sectional TEM images of GaN processed with (a) ALE and (b) continuous plasma process.","id":"train/atomic-layer-etching/experimental-usecase/30/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/30/fig_3","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/Atomic layer etching of GaN and AlGaN.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":669,"height":408,"image_format":"jpeg","image_sha256":"a90c864c680d7de2a9c546c3e50b2dd5aedd495c042a537ffb911c04addb5009","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":2,"y":223,"width":663,"height":179},{"panel_id":"a","x":2,"y":2,"width":665,"height":179}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The TEM cross section shows the GaN surface after ALE, with the GaN layer above the AlGaN layer. The etched front appears relatively smooth, with small height variations marked near about 1.3 to 1.4 nm.\"},{\"panel_id\":\"b\",\"text\":\"The TEM cross section shows the GaN surface after a continuous plasma process, again above AlGaN. The etched front appears much rougher and more nonuniform, with larger height variations marked near about 6.8 to 18 nm.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In (a) the etched front is relatively smooth and the height variation is small. In (b) the etched front is much more jagged and the height variation is larger. This supports the paper’s point that ALE can reduce roughening compared with a continuous plasma process by separating surface modification and removal steps.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They indicate the material layers in the cross section, with GaN above AlGaN in both subfigures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ALE process in subfigure (a).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It can reduce plasma induced damage related to rough topography.\\n\\nIt improves interface and surface quality for subsequent device layers.\\n\\nIt helps maintain dimensional control in features such as recessed gates.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_30_fig_4.jpg","caption":"Fig. 4. (Color online) AFM images of AlGaN surface. (a) Initial, (b) $\\mathrm{Cl}_2$ ALE, and (c) $\\mathrm{BCl}_3 / \\mathrm{Cl}_2$ ALE.","id":"train/atomic-layer-etching/experimental-usecase/30/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/30/fig_4","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/Atomic layer etching of GaN and AlGaN.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":669,"height":220,"image_format":"jpeg","image_sha256":"272336ec2da19f90ade2bb3995a7948554750aaae7e7f2d93533ee3d80bbc828","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":452,"y":6,"width":216,"height":212},{"panel_id":"b","x":229,"y":8,"width":214,"height":211},{"panel_id":"a","x":4,"y":3,"width":215,"height":212}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"AFM image of the initial AlGaN surface, with RMS roughness 0.4 nm over a 5 x 5 μm area.\"},{\"panel_id\":\"b\",\"text\":\"AFM image after Cl2 ALE, showing a rougher surface with RMS roughness 1.8 nm.\"},{\"panel_id\":\"c\",\"text\":\"AFM image after BCl3 and Cl2 ALE, showing a smoother surface with RMS roughness 0.3 nm.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Figure | Description |\\n| --- | --- |\\n| (a) | 5 x 5 µm image with RMS = 0.4 nm |\\n| (b) | Image with RMS = 1.8 nm |\\n| (c) | Image with RMS = 0.3 nm |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The initial surface in (a) has moderate roughness at 0.4 nm. After Cl2 ALE in (b) the roughness increases to 1.8 nm, indicating strong roughening. After BCl3 and Cl2 ALE in (c) the roughness decreases to 0.3 nm, indicating a smoother surface than the initial case.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"BCl3 and Cl2 ALE, shown in panel (c) with RMS roughness 0.3 nm.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is the RMS surface roughness of the AlGaN surface in nm for that scan area.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It can help maintain uniform electric fields in near surface device regions.\\n\\nIt can improve interface quality for later dielectric or metal deposition.\\n\\nIt can reduce variability in critical dimensions for patterned features.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_34_fig10.jpg","caption":"FIG.10. Pore area analysis of the AAO substrate (a) intrinsic, (b) 100 cycles pALE, (c) 300 cycles pALE by ImageJ, and (d) comparison of pore diameter after pALE.","id":"train/atomic-layer-etching/experimental-usecase/34/fig10","sample_id":"atomic-layer-etching/experimental-usecase/34/fig10","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/CF4 plasma-based atomic layer etching of Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":666,"height":1267,"image_format":"jpeg","image_sha256":"d5ad206834ae04dbe7faae172898b423809068d2c822c9bb840ab42a86f07039","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":19,"width":653,"height":240},{"panel_id":"b","x":8,"y":268,"width":650,"height":243},{"panel_id":"c","x":5,"y":521,"width":655,"height":240},{"panel_id":"d","x":5,"y":769,"width":655,"height":492}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"show SEM micrographs of the intrinsic AAO, AAO after 100 pALE cycles, and AAO after 300 pALE cycles, respectively, with red overlays indicating the pore areas extracted using ImageJ.\"},{\"panel_id\":\"b\",\"text\":\"show SEM micrographs of the intrinsic AAO, AAO after 100 pALE cycles, and AAO after 300 pALE cycles, respectively, with red overlays indicating the pore areas extracted using ImageJ.\"},{\"panel_id\":\"c\",\"text\":\"show SEM micrographs of the intrinsic AAO, AAO after 100 pALE cycles, and AAO after 300 pALE cycles, respectively, with red overlays indicating the pore areas extracted using ImageJ.\"},{\"panel_id\":\"d\",\"text\":\"provides a bar chart comparison of the average pore diameters for the three conditions, showing relatively consistent pore sizes with slight variations after ALE cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"| Condition|Pore Diameter (nm)|Error Bar (approx.)|\\n|----------|------------------|-------------------|\\n|AAO|~200|±100|\\n|100 cycles|~220|±120|\\n|300 cycles|~270|±130|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Monitoring pore diameter evolution provides insight into etching uniformity, selectivity, and process control. By comparing intrinsic AAO with samples subjected to different pALE cycles, researchers can determine whether the etch rate is consistent and whether the process maintains pore integrity. The increase in pore diameter without significant distortion indicates a controlled etching environment, which is important for applications requiring precise nanostructure tuning, such as filtration membranes, sensing substrates, or templated nanofabrication.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The pore diameter increases from approximately 200 nm for intrinsic AAO to around 270 nm after 300 pALE cycles.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Slight widening of pore openings, Smoother pore-wall edges, More uniform pore boundaries, Increased average pore diameter with higher cycle numbers\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_34_fig_2.jpg","caption":"FIG. 2. TEM-EDS element mapping of $\\mathrm{CF_4}$ plasma-treated $\\mathrm{Al}_2\\mathrm{O}_3$ film at (a) 0.07 Torr-10 min and at (b) 2 Torr-5 min. Dotted line represents the original $\\mathrm{Al}_2\\mathrm{O}_3$ film surface.","id":"train/atomic-layer-etching/experimental-usecase/34/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/34/fig_2","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/CF4 plasma-based atomic layer etching of Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1403,"height":622,"image_format":"jpeg","image_sha256":"20b0a394b4b5ec0138683178f2a51e299ea275d4e199fa640a821cdbe72969d2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":54,"y":1,"width":1341,"height":321},{"panel_id":"b","x":63,"y":324,"width":1333,"height":295}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This panel presents a cross-sectional TEM image of the CF₄ plasma-treated Al₂O₃ film at 0.07 Torr for 10 minutes, accompanied by EDS elemental maps (Al, O, F, Si). The maps reveal partial etching and fluorine incorporation near the surface, while the dotted line marks the original Al₂O₃ thickness.\"},{\"panel_id\":\"b\",\"text\":\"This panel shows the same set of analyses for a higher-pressure CF₄ treatment (2 Torr for 5 minutes). The TEM image displays a significantly reduced etching depth, and the EDS maps indicate a more uniform elemental distribution with less fluorine penetration compared to the low-pressure condition.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Low-pressure CF₄ plasma produces deeper etching and stronger chemical modification of Al₂O₃, making it suitable for applications requiring high reactivity and material removal. In contrast, high-pressure plasma results in limited fluorine penetration and minimal etching, which is beneficial for gentle surface treatment. Thus, pressure acts as a key tuning parameter for precise etch-depth control\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.07 Torr for 10 minutes shows significantly deeper fluorine penetration.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Increased F incorporation at low pressure, Greater etching depth at low pressure, More uniform Al/O signal at high pressure, Clear surface modification identified by TEM contrast\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_34_fig_9.jpg","caption":"FIG. 9. Surface images of the AAO substrate (a)–(c) intrinsic, (d)–(f) after 100 cycles pALE, and (g)–(i) after 300 cycles pALE.","id":"train/atomic-layer-etching/experimental-usecase/34/fig_9","sample_id":"atomic-layer-etching/experimental-usecase/34/fig_9","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"},{"panel_id":"g","label":"image panel"},{"panel_id":"h","label":"image panel"},{"panel_id":"i","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/CF4 plasma-based atomic layer etching of Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1136,"height":828,"image_format":"jpeg","image_sha256":"04b2b400989d9e306c4471dc3817efcd616bf6e9ab726e38d93cb7eb4223bcbb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":76,"y":45,"width":349,"height":254},{"panel_id":"b","x":76,"y":304,"width":347,"height":257},{"panel_id":"c","x":76,"y":568,"width":347,"height":256},{"panel_id":"d","x":434,"y":48,"width":342,"height":251},{"panel_id":"e","x":433,"y":306,"width":347,"height":251},{"panel_id":"f","x":434,"y":571,"width":344,"height":251},{"panel_id":"g","x":789,"y":45,"width":342,"height":253},{"panel_id":"h","x":788,"y":303,"width":344,"height":242},{"panel_id":"i","x":789,"y":570,"width":341,"height":249}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This panel shows a tilted SEM image of the pristine porous template at 0 ALD cycles, revealing a highly ordered, interconnected pore network with sharp edges and uniform feature size, serving as the reference morphology before film deposition.\"},{\"panel_id\":\"b\",\"text\":\"This top-view SEM image at higher magnification illustrates the open pore structure of the uncoated template, with well-defined pore openings and thin pore walls, indicating minimal surface roughness prior to ALD processing.\"},{\"panel_id\":\"c\",\"text\":\"This high-magnification SEM image highlights the local pore geometry of the uncoated structure, showing irregular pore interiors and sharp junctions that emphasize the complexity of the high-aspect-ratio surface to be coated.\"},{\"panel_id\":\"d\",\"text\":\"This tilted SEM image after 100 ALD cycles shows that the overall porous architecture is preserved while pore walls become visibly thicker, demonstrating conformal film growth without structural collapse.\"},{\"panel_id\":\"e\",\"text\":\"This top-view SEM image after 100 ALD cycles reveals a reduction in pore diameter and smoother pore edges, indicating uniform coating of the internal pore surfaces by the ALD film.\"},{\"panel_id\":\"f\",\"text\":\"This high-magnification image further confirms conformal deposition after 100 cycles, with increased wall thickness and rounded pore contours resulting from continuous ALD film growth.\"},{\"panel_id\":\"g\",\"text\":\"This tilted SEM image after 300 ALD cycles shows substantial thickening of the pore walls while maintaining the long-range order of the porous structure, highlighting the scalability of conformal growth with increasing cycle number.\"},{\"panel_id\":\"h\",\"text\":\"This top-view SEM image after 300 cycles demonstrates significant pore narrowing and enhanced uniformity, reflecting cumulative ALD film deposition on all exposed surfaces.\"},{\"panel_id\":\"i\",\"text\":\"This high-magnification SEM image illustrates near-cylindrical pores with smooth, thick walls after 300 cycles, confirming excellent thickness control and conformality even after extensive ALD processing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Description|\\n|------------|\\n|SEM image at 20k tilt, 0 cycles|\"},{\"panel_id\":\"b\",\"text\":\"| Description|\\n|------------|\\n|SEM image at 30k, 0 cycles|\"},{\"panel_id\":\"c\",\"text\":\"| Description|\\n|------------|\\n|SEM image at 50k, 0 cycles|\"},{\"panel_id\":\"d\",\"text\":\"| Description|\\n|------------|\\n|SEM image at 20k tilt, 100 cycles|\"},{\"panel_id\":\"e\",\"text\":\"| Description|\\n|------------|\\n|SEM image at 30k, 100 cycles|\"},{\"panel_id\":\"f\",\"text\":\"| Description|\\n|------------|\\n|SEM image at 50k, 100 cycles|\"},{\"panel_id\":\"g\",\"text\":\"| Description|\\n|------------|\\n|SEM image at 20k tilt, 300 cycles|\"},{\"panel_id\":\"h\",\"text\":\"| Description|\\n|------------|\\n|SEM image at 30k, 300 cycles|\"},{\"panel_id\":\"i\",\"text\":\"| Description|\\n|------------|\\n|SEM image at 50k, 300 cycles|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The controlled widening and smoothing of AAO pores after 100 and 300 pALE cycles demonstrate that the process enables highly selective material removal while preserving structural order. These improvements in pore uniformity, circularity, and surface smoothness make pALE-treated AAO substrates suitable for applications such as nanopatterning, filtration templates, and nanoscale device fabrication where precise geometry control is critical.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Compared to 0 cycles, the 100-cycle images show moderately enlarged and smoother pores, while the 300-cycle images exhibit significantly wider, more circular, and highly uniform pore structures.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Increased pore diameter, Rounded and smoother pore edges, Reduced surface irregularities, More consistent pore spacing and uniformity\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_13.jpg","caption":"Fig. 13. TEM images of the trench pattern sample as $\\mathrm{TiO_2}$ was deposited: (a) perspective of the pattern, (b) enlargement of the top of the pattern, (c) middle of the pattern at a depth of $1400\\mathrm{nm}$ from the top, and (d) the bottom of the pattern. Images (e)–(j) are TEM images after eight cycles of the process. Images show samples after the cyclic process with $\\mathrm{O_2}$ plasma treatment for $30~\\mathrm{s}$ [(e)–(g)] and $60~\\mathrm{s}$ [(h)–(j)].","id":"train/atomic-layer-etching/experimental-usecase/36/fig_13","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_13","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"},{"panel_id":"g","label":"image panel"},{"panel_id":"h","label":"image panel"},{"panel_id":"i","label":"image panel"},{"panel_id":"j","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1383,"height":828,"image_format":"jpeg","image_sha256":"c92ccce87442d38af8309be96aed0a6b0f512ac0f20515b8af7b39d4f0938dc6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":257,"height":823},{"panel_id":"b","x":295,"y":3,"width":361,"height":267},{"panel_id":"c","x":295,"y":279,"width":359,"height":271},{"panel_id":"d","x":295,"y":561,"width":361,"height":265},{"panel_id":"e","x":672,"y":8,"width":345,"height":252},{"panel_id":"f","x":672,"y":283,"width":345,"height":258},{"panel_id":"g","x":670,"y":566,"width":345,"height":259},{"panel_id":"h","x":1033,"y":1,"width":345,"height":256},{"panel_id":"i","x":1033,"y":286,"width":338,"height":254},{"panel_id":"j","x":1042,"y":568,"width":333,"height":249}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_2.jpg","caption":"Fig. 2. Cross-sectional TEM images: (a) as deposited and (b) after $\\mathrm{CF_4}$ plasma treatment for $30~\\mathrm{s}$ .","id":"train/atomic-layer-etching/experimental-usecase/36/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_2","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":908,"height":686,"image_format":"jpeg","image_sha256":"93fcc7267cc34391d83e4dee4bf28ac714ba1c8b9429ec51522223c080fe3629","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":13,"width":496,"height":670},{"panel_id":"b","x":530,"y":10,"width":376,"height":679}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_6.jpg","caption":"Fig. 6. TEM images: (a) as $\\mathrm{TiO_2}$ deposited, (b) after $\\mathrm{C_4F_8}$ plasma treatment, and (c) after $\\mathrm{O_2}$ plasma treatment.","id":"train/atomic-layer-etching/experimental-usecase/36/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_6","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1214,"height":272,"image_format":"jpeg","image_sha256":"dd0d49c279f7529112c126a5eb4682cfe8b535aed2c0ddd92f51e5964640cc9a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":1,"width":414,"height":269},{"panel_id":"b","x":418,"y":8,"width":437,"height":260},{"panel_id":"c","x":860,"y":4,"width":346,"height":264}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_7.jpg","caption":"Fig. 7. TEM images of $\\mathrm{TiO_2}$ film after $\\mathrm{C_4F_8}$ plasma treatment for (a) $30~\\mathrm{s}$ and (b) $60~\\mathrm{s}$ .","id":"train/atomic-layer-etching/experimental-usecase/36/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_7","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":905,"height":405,"image_format":"jpeg","image_sha256":"30ec45744cd3eec889abea7a9e7fdb7107e166a309cdbb38a4c6e363bbb90732","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":7,"width":383,"height":397},{"panel_id":"b","x":389,"y":7,"width":513,"height":396}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_4_fig_4.jpg","caption":"FIG. 4. AFM micrograph of a photolithographically patterned ITO grating using ALE. The ITO grating has $1\\mu \\mathrm{m}$ lines with $3\\mu \\mathrm{m}$ period. Conventional photoresist was used as an etch mask. The etched areas are visibly smoother than unetched areas. 100 cycles using $20\\mathrm{W}$ RF power was used. (a) shows the 3D view and (b) shows the conventional 2D AFM measurement of the same region. The scan area was $10\\times 10\\mu \\mathrm{m}$","id":"train/atomic-layer-etching/experimental-usecase/4/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/4/fig_4","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/Atomic layer etching of indium tin oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":678,"height":817,"image_format":"jpeg","image_sha256":"9e39757d836e4002d65b7fdf84e3193c37307b9b454a1603e615508f355b61f3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":30,"width":670,"height":263},{"panel_id":"b","x":7,"y":359,"width":632,"height":454}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_43_fig_4.jpg","caption":"Fig. 4. Cross-section TEM image of ALD $\\mathrm{Al_2O_3}$ film on a trench pattern: (a) as-deposited and (b) after 30 ALE cycles at $250^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/43/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/43/fig_4","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/Surface reaction during thermal atomic layer etching of aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1105,"height":508,"image_format":"jpeg","image_sha256":"2b4215d7c918936bdf52963057f52f134ea8f67d570f63f524a653a27268373d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":536,"height":508},{"panel_id":"b","x":573,"y":0,"width":532,"height":508}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_9_figure_2.jpg","caption":"Figure 2. (a) Scanning electron microscopy (SEM) images of InGaAs/InAlAs vertical nanowires (VNWs) after $\\mathrm{BCl}_3 / \\mathrm{SiCl}_4 / \\mathrm{Ar}$ RIE and after 300 and 600 cycles of HF/DMAC thermal ALE at $250^{\\circ}C$ b) SEM images of InGaAs/InAlAs VNWs before and after 250 cycles of HF/DMAC thermal ALE at a higher reaction temperature of $300^{\\circ}C$ . VNWs after 500 cycles were not shown because the InAlAs in the VNWs was completely etched. (c) XRR measurement of a planar InGaAs film after $300^{\\circ}C$ HF/DMAC thermal ALE, confirming the higher etch rate of $\\sim 0.18\\mathrm{\\AA}/$ cycle. (d) Summary of changes in VNW radius versus number of cycles for InGaAs and InAlAs VNWs at 250 and $300^{\\circ}C$","id":"train/atomic-layer-etching/experimental-usecase/9/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/9/figure_2","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/In Situ Thermal Atomic Layer Etching for Sub5 nm InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":847,"height":775,"image_format":"jpeg","image_sha256":"d1188a21a822a1865fe9be05cc48bdf89d8f70a6e31c9f944c3afbeb16695b6c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":-3,"y":358,"width":442,"height":375},{"panel_id":"b","x":461,"y":11,"width":375,"height":320},{"panel_id":"a","x":11,"y":6,"width":459,"height":354},{"panel_id":"d","x":432,"y":360,"width":411,"height":368}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image panel consists of series of ccanning electron microscopy (SEM) images of InGaAs/InAlAs vertical nanowires (VNWs) during different stages of HF/DMAC ALE process at 250 °C\"},{\"panel_id\":\"b\",\"text\":\"The image panel consists of series of ccanning electron microscopy (SEM) image at different ALE stages at 300 °C\"},{\"panel_id\":\"c\",\"text\":\"The line chart shows the change in X-ray reflectivity intensity with respect to omega-2θ (arcsec) for different cycles of ALE.\"},{\"panel_id\":\"d\",\"text\":\"The line chart illustrates the change in radius (ΔRadius) over the number of ALE cycles for InAlAs and InGaAs at different temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Condition | InGaAs Thickness | InAlAs Thickness |\\n|-----------------|-------------------|-------------------|\\n| After RIE | 28 nm | 28nm |\\n| 300 cycles | 24 nm | 18 nm |\\n| 600 cycles | 24 nm | 10 nm |\"},{\"panel_id\":\"b\",\"text\":\"| Condition | InGaAs Thickness | InAlAs Thickness |\\n|-----------------|-------------------|-------------------|\\n| After RIE | 35 nm | 35 nm |\\n| 250 cycles | 24 nm | 4 nm |\"},{\"panel_id\":\"c\",\"text\":\"| Cycles | Density edge intensity |\\n|-----------|--------------------|\\n| Pristine |10^9 |\\n| 200 |10^7 |\\n| 450 |10^5 |\"},{\"panel_id\":\"d\",\"text\":\"| Material | Temperature | Growth Rate (Å/cycle) |\\n|-----------|------------|-------------------------|\\n| InAlAs | 300°C | 0.62 |\\n| InGaAs | 300°C | — |\\n| InAlAs | 250°C | — |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The partial etching selectivity between InGaAs and InAlAs might occur because fluorination of AlAs (Gibbs free energy ΔG° = −86.0 kcal/mol) is thermochemically more favorable than the fluorination of GaAs (ΔG° = −17.4 kcal/mol) at 250 °C. This behavior is also consistent with the faster oxidation of InAlAs versus InGaAs at 300−500 °C.Fluorination/oxidation of InAlAs is probably more favorable than for InGaAs because Al−F/Al-O bonds are stronger than Ga−F/Ga-O bonds.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The radial etch rates of InGaAs and InAlAs VNWs at 300 °C are as follows. \\n1. After the first 250 cycles, InGaAs is 0.24 and InAlAs is 0.62 Å/cycle on average. \\n2. After the second 250 cycles, InGaAs is 0.10 and InAlAs decreases to 0.41 Å/cycle on average.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The negligible etching of InGaAs after 300 cycles of thermal ALE at 250 °C may be caused by the low temperature of 250 °C.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_9_figure_3.jpg","caption":"Figure 3. SEM side-view images of InGaAs/InAlAs fins after (a) fin RIE and after subsequent thermal ALE with HF/DMAC under various conditions: (b) $P_{\\mathrm{DMAC}} = 40 \\mathrm{mTorr}$ for 250 and 600 cycles at $250^{\\circ}\\mathrm{C}$ , (c) $P_{\\mathrm{DMAC}} = 150 \\mathrm{mTorr}$ for 500 cycles at $250^{\\circ}\\mathrm{C}$ , and (d) $P_{\\mathrm{DMAC}} = 40 \\mathrm{mTorr}$ for 250 and 500 cycles at $300^{\\circ}\\mathrm{C}$ . (e,f) AFM measurement of RMS surface roughness and topography of a planar InGaAs surface after sequential thermal ALE (HF/DMAC, $P_{\\mathrm{DMAC}} = 40 \\mathrm{mTorr}$ , $300^{\\circ}\\mathrm{C}$ ). In all cases, the InGaAs wafer was etched by $\\mathrm{BCl}_3 / \\mathrm{SiCl}_4 / \\mathrm{Ar}$ RIE prior to the thermal ALE treatment.","id":"train/atomic-layer-etching/experimental-usecase/9/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/9/figure_3","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"line chart"},{"panel_id":"f","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/In Situ Thermal Atomic Layer Etching for Sub5 nm InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1106,"height":639,"image_format":"jpeg","image_sha256":"9db4debd535cc6f1a25e26c4c246f1dd3fee63db03773418057401e913ef9c72","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"d","x":715,"y":2,"width":392,"height":264},{"panel_id":"b","x":181,"y":2,"width":347,"height":272},{"panel_id":"c","x":530,"y":0,"width":186,"height":281},{"panel_id":"e","x":7,"y":306,"width":340,"height":299},{"panel_id":"f","x":340,"y":302,"width":758,"height":292},{"panel_id":"a","x":9,"y":6,"width":168,"height":268}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image panel shows the surface morphology of InGaAs after RIE before ALE\"},{\"panel_id\":\"b\",\"text\":\"The image panel shows the surface morphology of InGaAs after 250 and 600 cycles of ALE at 40m Torr and 250 °C\"},{\"panel_id\":\"c\",\"text\":\"The image panel shows the surface morphology of InGaAs after 500 cycles of ALE at 140m Torr and 250 °C\"},{\"panel_id\":\"d\",\"text\":\"The image panel shows the surface morphology of InGaAs after 250 and 600 cycles of ALE at 40m Torr and 300 °C\"},{\"panel_id\":\"e\",\"text\":\"The line chart illustrates the change in RMS surface roughness of etched InGaAs surface with increasing number of cycles under HF/DMAC at 40 mT and 300°C.\"},{\"panel_id\":\"f\",\"text\":\"The image panel includes three AFM images showing the surface topography of InGaAs after RIE and after different cycles of thermal ALE at 40 mT and 300°C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"| Number of Cycles | RMS Surface Roughness (nm) |\\n|-----------------|--------------------------|\\n| 0 | 0.5 |\\n| 150 | 0.5 |\\n| 200 | 0.48 |\\n| 250 | 0.7 |\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thermal ALE can preserve or possibly improve sidewall quality even after hundreds of cycles. The improvement in fin sidewall roughness, in particular, can have a significant impact on FinFET performance as the AFM image shows that the surface topography is preserved after 150 and 200 cycles.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At lower DMAC pressure and lower temperature, the fin sidewalls become rougher after 250 and 600 cycles (b). In the cases of (c) or (d), with a higher pressure DMAC or higher temperature, the quality of the sidewall and planar surfaces significantly improves. Overall, process (image d) with the higher\\ntemperature of 300 °C for 250 cycles produces the smoothest fin sidewall and planar surfaces.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The slight increase of Rrms after 250 thermal ALE cycles may occur because InGaAs and InAlAs are ternary materials. When they are etched, the surface can suffer from preferential etching of one metal over the other. XPS analysis confirmed that the In/Ga ratio decreased from 1.0 to 0.8−0.9 after 600 thermal ALE cycles at 250−300 °C as expected from the preferential etching of InAs compared with GaAs. There was also increased Al content perhaps resulting from partial conversion of InGaAs/InAlAs to AlAs during the DMAC reaction.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_17_fig_2.jpg","caption":"Fig. 2. (a) Twelve substrate regions for microscopic simulations. (b) Twelve substrate positions for the investigation of the flow distribution.","id":"train/atomic-layer-etching/simulation-usecase/17/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/17/fig_2","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/Multiscale computational fluid dynamics modeling of thermal atomic layer etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":603,"height":411,"image_format":"jpeg","image_sha256":"c4aad4cd56b3cd9195484873f7bd9bc2b6baeb59cbf33a8a26d5e4716fdc69e4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":9,"width":356,"height":351},{"panel_id":"b","x":483,"y":0,"width":120,"height":360}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_23_fig_8.jpg","caption":"FIG. 8. TEM cross sections of a $4 \\times 50 \\mathrm{nm}$ InGaAs nanowire covered by $4.7 \\mathrm{nm}$ ALD-grown $\\mathrm{Al}_2\\mathrm{O}_3$ and $20 \\mathrm{nm}$ of ALD tungsten. Reprinted with permission from Lu et al., in International Electron Devices Meeting, San Francisco, 1-5 December 2018 (IEDM, Montgomery Village, 2018), p. 895. Copyright 2018, IEEE.","id":"train/atomic-layer-etching/simulation-usecase/23/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/23/fig_8","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/Review Paper -- Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":667,"height":406,"image_format":"jpeg","image_sha256":"30663a1ececfacb558c60061d01e2c009ff6a13d27ca7a63ac8ee9641ad01f2e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":414,"y":5,"width":250,"height":400},{"panel_id":"a","x":6,"y":4,"width":406,"height":398}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_15.jpg","caption":"FIG. 15. (Color online) Profiles resulting from etching the gate structure with a (a)–(c) continuous etching process, and (d)–(f) the optimized ALE process. Time increases from left to right. Frames are taken at equal over-etch (as a percentage of the time required to expose the bottom $\\mathrm{SiO}_2$ ), not at equal etch times. The etch times listed for the ALE process (d)–(f) are active (plasma on) times, and ignore any purge or dwell times necessary for a functional ALE process.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_15","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_15","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1422,"height":1000,"image_format":"jpeg","image_sha256":"93831789b5acba8f13bba6e4a117976473f1870a9bafcddddd9087e8a9e45861","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"d","x":0,"y":503,"width":516,"height":497},{"panel_id":"b","x":497,"y":61,"width":474,"height":411},{"panel_id":"c","x":957,"y":66,"width":455,"height":413},{"panel_id":"e","x":511,"y":511,"width":457,"height":482},{"panel_id":"f","x":975,"y":515,"width":439,"height":478},{"panel_id":"a","x":5,"y":55,"width":510,"height":447}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_32_fig_3.jpg","caption":"FIG. 3. (a) The perspective view of Connolly surface constructed on $\\mathrm{BCl}_3$ adsorbed $\\mathrm{Al}_2\\mathrm{O}_3(100)$ using a probe atom with a radius of $2.77\\mathrm{\\AA}$ ; (b) The time-resolved variations of $\\mathrm{Al}_2\\mathrm{O}$ molar ratio in $\\mathrm{Al}_2\\mathrm{O}_3(100)$ surface during the Ar bombardment (XPS measurements); (c) Atomic ASAs obtained from the above Connolly surface (unit: $\\mathring{\\mathrm{a}}^2$ ). The oxygen, aluminium, boron, and chlorine atoms are shown in red, violet, bronze, and green, respectively.","id":"train/atomic-layer-etching/simulation-usecase/32/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/32/fig_3","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/Understanding time-resolved processes in atomic-layer etching of ultra-thin Al2O3 film.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":667,"height":811,"image_format":"jpeg","image_sha256":"d561210cf3896c1b4b9705b96b527201deeda52d6f6ec67d70b55ce80e50104f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":314,"height":340},{"panel_id":"b","x":316,"y":1,"width":348,"height":345},{"panel_id":"c","x":32,"y":348,"width":626,"height":457}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Perspective rendering of the Connolly surface for a BCl3 adsorbed Al2O3(100) model, constructed using a probe radius of 2.77 Å (Ar van der Waals radius).\"},{\"panel_id\":\"b\",\"text\":\"XPS based Al to O molar ratio versus Ar irradiation time, showing an initial decrease followed by recovery as irradiation continues.\"},{\"panel_id\":\"c\",\"text\":\"Atomic accessible surface areas (ASA) computed from the Connolly surface, with Cl atoms showing the largest ASAs (tens of Å^2 per atom) compared with other surface atoms.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Ar Irradiation Time (sec) | A/O Molar Ratio |\\n|---|---|\\n| Ref. | 0.55 |\\n| 75 | 0.45 |\\n| 100 | 0.48 |\\n| 125 | 0.55 |\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A Connolly surface for the BCl3 adsorbed Al2O3(100) structure, generated using a 2.77 Å probe radius.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The chlorine atoms have the largest accessible surface areas, roughly 25 to 50 Å^2 per Cl atom.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The very large ASAs on Cl indicate that Cl dominates the outermost accessible surface, so Ar is most likely to strike Cl first. Because Cl is directly bonded to surface Al in the adsorption structure, these impacts can transfer energy efficiently into Al containing units, supporting the idea that Al associated moieties detach early.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Al to O ratio drops at the early stage (around 75 s) and then increases again at longer irradiation times (100 to 125 s), moving back toward the reference value.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_4_figure_6.jpg","caption":"Figure 6. BF-TEM images of a) the reference unetched $25 \\text{nm}$ TiN film on $22 \\text{nm} \\text{SiO}_2$ film, b) after complete etching of $25 \\text{nm}$ TiN film by 600 cycles of each $3 \\text{s}$ long $\\text{CCl}_4$ pulse separated by $6 \\text{s}$ of $\\text{N}_2$ purges.","id":"train/atomic-layer-etching/simulation-usecase/4/figure_6","sample_id":"atomic-layer-etching/simulation-usecase/4/figure_6","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/Combining Experimental and DFT Investigation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":653,"height":583,"image_format":"jpeg","image_sha256":"a5c390c29ef6ef70190e9c91ba824e5797cc8c5e43cd0b2ba84169ab986b2cc9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":3,"width":247,"height":572},{"panel_id":"b","x":255,"y":2,"width":387,"height":578}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"BF-TEM image of the reference unetched TiN/SiO₂ system, showing a 25 nm TiN film on 22 nm SiO₂. Spin-on carbon was used to enhance material contrast.\"},{\"panel_id\":\"b\",\"text\":\"BF-TEM image of the same sample after 600 cycles of 3 s CCl₄ pulses with 6 s N₂ purges, showing complete removal of the TiN film and a clean SiO₂ surface without residues.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Description |\\n|---|\\n| Reference unetched 25 nm TiN film on 22 nm SiO₂. Shows the original TiN layer for comparison. |\"},{\"panel_id\":\"b\",\"text\":\"| Description |\\n|---|\\n| TiN film completely removed after 600 cycles of 3 s CCl₄ pulses with 6 s N₂ purges. The SiO₂ surface appears clean and free of residues. |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"25 nm.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Before etching, the SiO₂ substrate is covered by a 25 nm TiN film, which is clearly visible in panel (a). After etching (panel b), the TiN film is completely removed, leaving the SiO₂ surface clean and smooth, with no visible residues from either the TiN layer or the etch process. The spin-on carbon used during TEM imaging highlights the material contrast but does not affect the interpretation of the substrate’s condition.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Provides high-resolution cross-sectional visualization of thin films, Confirms complete removal of the TiN layer, Allows assessment of the substrate’s surface integrity post-etch, Highlights any residual contamination or defects from the etch process\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_4_figure_8.jpg","caption":"Figure 8. Cross-sectional bright field transmission electron micrograph (BF-TEM) of 3D structures: a) about $3.3 \\text{nm}$ TiN film deposited on $\\text{SiO}_2$ fins with lateral cavities, b) the same after about $0.8 \\text{nm}$ TiN is etched by the $\\text{NbF}_5\\text{-}\\text{CCl}_4$ etch-process, and c) after removing the TiN film completely. The etching was performed at $460^{\\circ}\\text{C}$ .","id":"train/atomic-layer-etching/simulation-usecase/4/figure_8","sample_id":"atomic-layer-etching/simulation-usecase/4/figure_8","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/Combining Experimental and DFT Investigation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1375,"height":461,"image_format":"jpeg","image_sha256":"15f30b9b7fead45f5369e70682a9591f2c13c81b4e87853a35b78f5f299740df","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":7,"width":454,"height":447},{"panel_id":"b","x":463,"y":5,"width":451,"height":454},{"panel_id":"c","x":923,"y":7,"width":451,"height":447}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"BF-TEM cross-section of pristine SiO₂ fin structures coated with a ~3.3 nm TiN layer, showing high conformality.\"},{\"panel_id\":\"b\",\"text\":\"BF-TEM cross-section after partial etching (~0.8 nm) of the TiN layer using NbF₅–CCl₄ at 460 °C, showing minimal surface defects.\"},{\"panel_id\":\"c\",\"text\":\"BF-TEM cross-section after complete removal of the TiN film, showing intact SiO₂ fins and confirming etch selectivity.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Description|\\n|-----------|\\n| TEM image of SiO₂ fin structure coated with ~3.3 nm pristine TiN film, showing high conformality. |\"},{\"panel_id\":\"b\",\"text\":\"|Description|\\n|-----------|\\n| TEM image after ~0.8 nm TiN conformally etched by the NbF₅–CCl₄ process, with no significant surface defects. |\"},{\"panel_id\":\"c\",\"text\":\"|Description|\\n|-----------|\\n| TEM image after complete removal of the TiN film (over‑etch), with SiO₂ fins remaining intact, confirming etch selectivity. |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No significant increase in surface defects was observed after ~0.8 nm TiN removal.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Selective removal of TiN\\nPreservation of SiO₂ fins\\nHigh conformality maintained\\nPotential for advanced 3D nanostructure processing\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The conformality of TiN films plays a critical role in the effectiveness of gas‑phase etching. Because the TiN layer uniformly coats even non‑line‑of‑sight features, the NbF₅–CCl₄ etch process can remove material consistently across complex geometries. This structural property enhances isotropic etching and ensures selectivity, making conformal TiN deposition essential for reliable thinning and removal.\"}]}]"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_12_fig_12.jpg","caption":"Fig. 12. Atomic force microscope image of a $\\sim 320\\mathrm{A}$ thick tungsten film deposited at $425\\mathrm{K}$ after 125 AB cycles. The $\\mathrm{WF}_6$ and $\\mathrm{Si}_2\\mathrm{H}_6$ reactant exposures were sufficient for complete half-reactions. The light-to-dark range is $25\\mathrm{\\AA}$","id":"train/atomic-layer-deposition/experimental-usecase/12/fig_12","sample_id":"atomic-layer-deposition/experimental-usecase/12/fig_12","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":0,"width":641,"height":342}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/J.W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":650,"height":342,"image_format":"jpeg","image_sha256":"d4b9b612c83f0a5c0e7cad08214bd57cb131e40fa8a7541d0b43835c125187dd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_13_fig_4.jpg","caption":"FIG. 4. Cross-sectional SEM micrograph of a $20~\\mathrm{nm}$ Ti-Si-N film grown by MOALD at $180^{\\circ}\\mathrm{C}$ . Step coverage of the $\\mathrm{Ti - Si - N}$ film is approximately $100\\%$ even on the $0.3\\mu \\mathrm{m}$ diam hole with slightly negative slope and 10:1 aspect ratio.","id":"train/atomic-layer-deposition/experimental-usecase/13/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/13/fig_4","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":0,"width":503,"height":527}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/Jae-Sik Min et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":508,"height":530,"image_format":"jpeg","image_sha256":"42b0f3022b98e14b6599dc9d9310e526283e29cc136e12497f0e0a5cc424dba3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_16_fig_8.jpg","caption":"FiG. 8. (a) TEM image of the MIM stack and (b) a close-up of the $\\mathrm{ZrO_2}$ film. $\\mathrm{ZrO_2}$ was deposited with the $\\mathrm{Zr(Me_5Cp)(TEA) / O_3}$ process at $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/16/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/16/fig_8","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":21,"y":39,"width":620,"height":625},{"panel_id":"b","x":37,"y":700,"width":604,"height":286}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/Sanni Seppala et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":644,"height":992,"image_format":"jpeg","image_sha256":"1823f2f31571be9dd480ab4a3a14a6bd9b73f836c910ebe630f9cd3329304f9d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_2_figure_5.jpg","caption":"Figure 5. SEM images of (a) 50- and (b) 110-nm-thick platinum films.","id":"train/atomic-layer-deposition/experimental-usecase/2/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/2/figure_5","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Subfigure (a) shows the surface morphology of a ~50 nm ALD-grown Pt film, characterized by a dense population of small, bright Pt nanoparticles distributed across the substrate. The grains appear closely packed, indicating early coalescence but with significant nanoscale roughness remaining.\"},{\"panel_id\":\"b\",\"text\":\"Subfigure (b) displays the morphology of a thicker ~110 nm Pt film, where the particles appear larger and more coalesced, consistent with grain growth through continued ALD cycling. The increased thickness promotes lateral grain expansion and partial merging, yielding a smoother but still nanostructured Pt layer. Together, the images illustrate the thickness-dependent evolution of Pt film morphology typical for ALD-grown noble metals.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Larger Pt grains are present in subfigure (b), indicating extended coalescence.\\n-The particle density visually decreases as grains merge with increasing thickness.\\n-The surface appears smoother at the microscale in subfigure (b) than in (a).\\n-Subfigure (a) shows more discrete, fine nanoparticles, while subfigure (b) shows more mature, merged grain structures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Electrical conductivity, due to reduced electron scattering at grain boundaries.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the early stages of Pt ALD, individual adsorption–reduction events produce isolated nuclei that progressively grow laterally as cycles accumulate. With more cycles, precursor adsorption on existing Pt clusters becomes increasingly favorable, accelerating coalescence. Over time, these nuclei merge into larger grains, reducing the density of isolated particles and promoting film continuity. Subfigure (a) captures an intermediate stage where coalescence has begun but complete grain merging has not yet occurred.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The finer nanoparticle structure in the thinner film provides a higher surface-to-volume ratio and a larger density of exposed active sites, which can enhance catalytic activity. Although electrical connectivity may be lower, catalytic performance often benefits from high surface area rather than continuous film coverage.\"}]}]","bbox":[{"panel_id":"a","x":45,"y":-4,"width":623,"height":505},{"panel_id":"b","x":47,"y":530,"width":621,"height":494}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":669,"height":1025,"image_format":"jpeg","image_sha256":"fbe01f5056199626e32fe5964c3b1239ad37cf8e634451b91a64fd671bd794cf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_2_figure_6.jpg","caption":"Figure 6. AFM images of (a) 50- and (b) 110-nm-thick platinum films. Please note that the images have different $\\mathcal{Z}$ -axis scales.","id":"train/atomic-layer-deposition/experimental-usecase/2/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/2/figure_6","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Subfigure (a) shows a 3D AFM height map of a ~50 nm ALD-grown Pt film. The topology consists of rounded hill-valley structures with moderate amplitude, indicating partially coalesced grains that have not yet reached full surface continuity.\"},{\"panel_id\":\"b\",\"text\":\"Subfigure (b) presents a ~110 nm Pt film whose AFM landscape exhibits sharper protrusions and a larger vertical scale, consistent with continued grain growth and columnar thickening typical of noble-metal ALD. The difference in z-axis scaling between (a) and (b) highlights that the thicker film exhibits significantly higher peak-to-valley contrast, reflecting its rougher nanoscale texture. Together, the images illustrate thickness-dependent morphological evolution characteristic of Pt ALD.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Subfigure (a) shows rounded, laterally spread hill-valley structures. Subfigure (b) exhibits sharper, taller protrusions. This change indicates that lateral grain expansion has saturated, and additional ALD cycles preferentially increase vertical grain height (columnar thickening).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Local electric field distribution, which can affect charge injection, field emission, and catalytic reaction rates.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In ALD, each reaction cycle deposits material in a surface-saturating manner, limiting uncontrolled vertical growth. However, local variations in nucleation density and surface diffusion lead to uneven lateral growth across grains. This produces a uniformly covered but moderately corrugated surface, as seen in subfigure (a), where height variations arise from partially coalesced grains rather than runaway growth.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"By correlating roughness trends with film thickness, engineers can tune ALD conditions to suppress excessive vertical growth when smooth films are required or enhance roughness when high surface area is desired. This morphological feedback loop is essential for tailoring Pt films for specific applications like catalysis or microelectronics.\"}]}]","bbox":[{"panel_id":"a","x":9,"y":0,"width":615,"height":417},{"panel_id":"b","x":7,"y":480,"width":617,"height":429}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":625,"height":911,"image_format":"jpeg","image_sha256":"bb0b2c4038d4d38e779f2cead807a6e9f18e6b0746cfdb6da5001f2c58630928","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_22_fig_5.jpg","caption":"Fig. 5. FESEM images of LiF films deposited at various temperatures on $\\mathrm{SiO_2 / Si(111)}$ substrates. Deposition temperatures and film thicknesses are; a) $250^{\\circ}\\mathrm{C}$ $111\\mathrm{nm}$ , b) $275^{\\circ}\\mathrm{C}$ $97\\mathrm{nm}$ , c) $300^{\\circ}\\mathrm{C}$ $88\\mathrm{nm}$ , d) $325^{\\circ}\\mathrm{C}$ $73\\mathrm{nm}$ , and e) $350^{\\circ}\\mathrm{C}$ $90\\mathrm{nm}$ . Lithd and $\\mathrm{TiF_4}$ pulse lengths were $2\\mathrm{s}$ and purge times between these pulses were $4\\mathrm{s}$ .","id":"train/atomic-layer-deposition/experimental-usecase/22/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/22/fig_5","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"d","x":657,"y":469,"width":614,"height":469},{"panel_id":"b","x":647,"y":0,"width":619,"height":467},{"panel_id":"c","x":6,"y":466,"width":647,"height":474},{"panel_id":"e","x":321,"y":252,"width":637,"height":474},{"panel_id":"a","x":6,"y":0,"width":637,"height":456}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/Miia Mantymaki et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1272,"height":947,"image_format":"jpeg","image_sha256":"36ccda8e597b98e154ac6b402bf6153f1e4ca9164664dba6ece0aeff3d8d93de","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_22_fig_6.jpg","caption":"Fig. 6. AFM images of LiF films deposited at various temperatures. Deposition temperatures, films thicknesses, and rms roughnesses are; a) $250^{\\circ}\\mathrm{C}$ 111 nm 6.3 nm, b) $275^{\\circ}\\mathrm{C}$ 97 nm 9.5 nm, c) $300^{\\circ}\\mathrm{C}$ 88 nm 12.3 nm, d) $325^{\\circ}\\mathrm{C}$ 73 nm 15.9 nm, and e) $350^{\\circ}\\mathrm{C}$ 90 nm 20.6 nm. Notice that the vertical axis has a different scale in image e). Lithd and $\\mathrm{TiF_4}$ pulse lengths were 2 s and purge times between these pulses were 4 s.","id":"train/atomic-layer-deposition/experimental-usecase/22/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/22/fig_6","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"d","x":692,"y":320,"width":580,"height":353},{"panel_id":"b","x":668,"y":10,"width":604,"height":320},{"panel_id":"c","x":0,"y":345,"width":557,"height":345},{"panel_id":"e","x":338,"y":591,"width":590,"height":348},{"panel_id":"a","x":3,"y":5,"width":587,"height":321}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/Miia Mantymaki et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1275,"height":945,"image_format":"jpeg","image_sha256":"a799c8351fc2a9ecca9413076019e54cbe35cdb41b2ebafffaf983263a814df7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_25_figure_7.jpg","caption":"Figure 7. SEM micrographs of the $\\mathrm{ZnO:Al / ZnO / ESL / ACIGS}$ stacks, where the ESL is (a) $\\mathrm{ZnO}$ , (b) ZGO 0.12, (c) ZGO 0.33, (d) $\\mathrm{SnO}_{y}$ , and (e) TGO 0.10. The scale bar represents $200~\\mathrm{nm}$ in (a) and (b) and $100~\\mathrm{nm}$ in (c)–(e). (f) Schematic illustration of the $\\mathrm{ZnO:Al / ZnO / ESL / ACIGS}$ stack.","id":"train/atomic-layer-deposition/experimental-usecase/25/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/25/figure_7","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"device structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"d","x":8,"y":197,"width":277,"height":183},{"panel_id":"b","x":285,"y":6,"width":278,"height":188},{"panel_id":"c","x":565,"y":5,"width":274,"height":187},{"panel_id":"e","x":285,"y":196,"width":278,"height":184},{"panel_id":"f","x":563,"y":196,"width":277,"height":186},{"panel_id":"a","x":9,"y":8,"width":276,"height":184}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/Adam Hultqvist et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":842,"height":380,"image_format":"jpeg","image_sha256":"859779510c12807ca1c1a92d8e344924efc298856f5f1f33ebb3b2bba2c5f5d7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_11.jpg","caption":"Figure 11. AFM image for $89\\mathrm{-nm}$ ALD ITO film deposited on Si-100 at $275^{\\circ}C$ using 600 cycles with $5\\%$ $\\mathrm{SnO_2}$ cycles.","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_11","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_11","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":397,"height":420}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":397,"height":420,"image_format":"jpeg","image_sha256":"c4a9ed1be9fd8d94c2c6987402084adc64b194b1453ea50003da5583ccee249a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_12.jpg","caption":"Figure 12. SEM plan-view (a) and cross-sectional (b) images of ALD ITO film deposited on Si(100) using 600 cycles with $5\\%$ $\\mathrm{SnO_2}$ cycles at $275^{\\circ}C$ .","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_12","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_12","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":7,"y":6,"width":482,"height":334},{"panel_id":"b","x":7,"y":344,"width":481,"height":232}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":492,"height":580,"image_format":"jpeg","image_sha256":"a254805a2bc76a75128f8ae336a15913e26fbbfafecca6c775175669576fb752","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_13.jpg","caption":"Figure 13. (a) Cross-sectional SEM image of AAO membrane coated conformally with $9.7\\mathrm{-nm}$ ALD ITO film, and also with $161\\mathrm{-nm}$ ALD ITO film deposited selectively on the AAO front surface visible on the left side of the image. (b) Higher-resolution SEM image of AAO membrane showing that the $20\\mathrm{-nm}$ pores are sealed, and ITO nanocrystals decorate the inner walls of the $200\\mathrm{-nm}$ pores.","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_13","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_13","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":0,"width":493,"height":422},{"panel_id":"b","x":531,"y":4,"width":445,"height":417}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":980,"height":425,"image_format":"jpeg","image_sha256":"21cbf9025442a856e62d855bda9b114c9cb3e5e6a00154782f95079c4005107f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_27_fig_4.jpg","caption":"Fig. 4. XTEM image of TiN film deposited by remote PEALD method on contact hole approximately $0.25\\mu \\mathrm{m}$ wide and $2.5\\mu \\mathrm{m}$ deep.","id":"train/atomic-layer-deposition/experimental-usecase/27/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/27/fig_4","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a microscopic view of TiN-coated structures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The image shows similar TiN thickness's on the sidewalls of the 3D structures as well as on top, indicating good conformality.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The aspect ratio is 10.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The top edges show chamfered edges indicating that edge effects do play a role in the deposition at these locations.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process is likely radical driven as the sidewalls, that are not influenced by the ions, show similar thickness's as the top and bottom surface.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":547,"height":667}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/Ju Youn KIM et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":553,"height":672,"image_format":"jpeg","image_sha256":"c6d88db15993326bead7cfb61844b04a3e53c3f73c4f8958df8a3bd280bb0044","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_5.jpg","caption":"Figure 5. SEM (top) and AFM (bottom) images of the samples grown through (a), (c) the conventional ALD process and (b), (d) the ALD-DFM process on a $\\mathrm{SiO}_2$ substrate.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_5","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":45,"y":27,"width":292,"height":285},{"panel_id":"b","x":391,"y":29,"width":274,"height":283},{"panel_id":"c","x":59,"y":370,"width":272,"height":268},{"panel_id":"d","x":390,"y":370,"width":277,"height":268}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":666,"height":642,"image_format":"jpeg","image_sha256":"46e587451bfcbe8cbbd2d921045263bf1fd8ca18561f32b81a680d00917dea4c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_8.jpg","caption":"Figure 8. TEM images (left) and associated FFT analysis (right) of the samples grown through (a) the conventional ALD process and (b) the ALD-DFM process.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_8","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":52,"y":15,"width":617,"height":282},{"panel_id":"b","x":54,"y":347,"width":611,"height":263}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":672,"height":614,"image_format":"jpeg","image_sha256":"b4f086a8f80deb6c58ad6f9c092dd1ce898c37aeb5578109a8d29a298bd16ab7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_30_1b78016cb355e70dc8f9df6a158ffa618b7d7b3846cf68bd31bde9dd7bfc1aaf.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/30/1b78016cb355e70dc8f9df6a158ffa618b7d7b3846cf68bd31bde9dd7bfc1aaf","sample_id":"atomic-layer-deposition/experimental-usecase/30/1b78016cb355e70dc8f9df6a158ffa618b7d7b3846cf68bd31bde9dd7bfc1aaf","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a microscopic view of a sample tested under the 'Side-by-Side Setup'.\"},{\"panel_id\":\"b\",\"text\":\"The image shows a microscopic view of a sample tested under the 'Face-to-Face Setup'.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Based on the images it seems that the surface is rough.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Usually ALD and ALE applications involve extremely thin features and thickness's for which optical microscopy is not suitable.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Not every location on the setup has the same color indicating that there is non-uniformity.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"yes the probe is damaged in the corners.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":306,"height":277},{"panel_id":"b","x":350,"y":0,"width":305,"height":277}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/1b78016cb355e70dc8f9df6a158ffa618b7d7b3846cf68bd31bde9dd7bfc1aaf.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/1b78016cb355e70dc8f9df6a158ffa618b7d7b3846cf68bd31bde9dd7bfc1aaf.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/Kaupo Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"not_found"},"width":655,"height":277,"image_format":"jpeg","image_sha256":"d7d8ce8e0ec628079599d1f711682c8ed12dbf270cb19903549dfe852dd2f631","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_30_figure_6.jpg","caption":"Figure 6. Bird-eye scanning electron microscopy images of $\\mathrm{Fe_2O_3}$ (topmost panel) and $\\mathrm{Fe_3O_4 - MgO}$ films $2^{\\mathrm{nd}}$ to $4^{\\mathrm{th}}$ panel from top) grown using different cycle sequences indicated by labels. The films were grown from $\\mathrm{CpFeC_5H_4CHN(CH_3)_2}$ at $425^{\\circ}\\mathrm{C}$ . Film thicknesses and $\\mathrm{Mg}$ to $\\mathrm{Fe}$ atomic ratios are also given by labels.","id":"train/atomic-layer-deposition/experimental-usecase/30/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/30/figure_6","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The pure Fe₂O₃ film shows large, faceted grains with sharp edges. The surface is rough and loosely packed. This morphology is typical of high-temperature hematite growth without modifiers.\"},{\"panel_id\":\"b\",\"text\":\"With a small amount of Mg added, the grains become smaller and less faceted. The surface looks more compact than in (a). Grain boundaries are still visible but less pronounced.\"},{\"panel_id\":\"c\",\"text\":\"At higher Mg content, the grain size is strongly reduced. The surface appears dense and uniform, with rounded features. Grain coarsening is clearly suppressed.\"},{\"panel_id\":\"d\",\"text\":\"At the highest Mg/Fe ratio, the surface consists of very fine, closely packed grains. Individual grain shapes are hard to distinguish. This indicates strong inhibition of surface diffusion and crystallite growth.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The roughest film is the non-doped film grown with Fe2O3\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Measurement: top-down SEM (“bird-eye”) surface imaging of the films\\n\\nScale bar: 1.00 µm in each panel\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The rough topography in (a) is consistent with growth dominated by separated columns/grains/pillars with voids between them. In (b), the higher packing density indicates more nucleation sites and/or tighter column spacing. In (c–d), the continuity and smoothness suggest the voided columnar morphology is suppressed, producing a more coalesced film surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A smoother, more continuous film typically improves thickness uniformity and reduces extreme topographic variations that can complicate electrical contacting or multilayer integration. It can also reduce variability in local magnetic response caused by large voids/isolated pillars. In this study, morphology is treated as a key co-variable alongside phase content when interpreting magnetic performance trends.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Panel (a): large, plate-like, faceted grains\\n-Panel (d): fine, rounded grains with high packing density\\n-Panel (a): broader grain-size distribution\\n-Panel (d): narrow grain-size distribution\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems that iron oxide grows both lateraly as well as vertically, indicating there is no preferred orientation.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Changes in the roughness can be observed as a function of the Mg/Fe ratio.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughness increases as the Mg/Fe ratio increases. The highest level of roughness is produced at the highest Mg/Fe ratio.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the Mg/Fe ratio seems to result in lower thicknesses and therefore lower GPCs. This could be an effect of nucleation delay of iron oxide growing on top of Magnesium oxide.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing MgO insertion suppresses grain growth, driving a transition from large faceted grains to finer, more rounded features. This indicates reduced surface diffusion and interrupted crystallite coalescence during growth. The effect strengthens monotonically with Mg/Fe ratio, consistent with Mg acting as a kinetic growth modifier.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Catalysis requiring high surface area\\n-Gas-sensing layers\\n-Electrochemical interfaces\\n-Diffusion-barrier coatings\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The non-doped film shows a pillar/grain-like rough surface with large voids. With small Mg addition (Mg/Fe ≈ 0.02), the surface becomes denser, and the voids shrink. At higher Mg/Fe (≈0.23–0.38), the films become more continuous and smoother, with fewer large surface openings.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The morphology of Fe2O3 films directly affects their functional properties, such as catalytic activity, magnetic behavior, and surface reactivity. By controlling MgO doping, the film’s surface continuity, pillar density, and thickness can be tuned, which can improve performance in applications where uniformity, smoothness, or specific surface features are critical.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In subfigure a, more height differences can be observed, indicating that the film consists of more voids, resulting in a lower density.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The surface roughness decreases as the MgO content increases.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Atomic force microscopy could be used, with this method actual height differences are identified.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Reduced grain size with rounded grain boundaries.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Increased density of grains/pillars, Reduced void width, Smoother and more continuous surface, Decreased overall film thickness at high MgO levels\"}]}]","bbox":[{"panel_id":"a","x":4,"y":4,"width":394,"height":300},{"panel_id":"b","x":4,"y":312,"width":394,"height":292},{"panel_id":"c","x":6,"y":618,"width":390,"height":294},{"panel_id":"d","x":7,"y":923,"width":384,"height":283}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/Kaupo Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":403,"height":1217,"image_format":"jpeg","image_sha256":"162c5d71a290bb63b1be2c5144e573d301958bd2891dbce6208465cb3d4452cb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_30_figure_7.jpg","caption":"Figure 7. Cross section SEM/EDX images from a $72~\\mathrm{nm}$ thick film grown from $\\mathrm{CpFeC_5H_4CHN(CH_3)_2}$ at $375^{\\circ}C$ usin 500 ALD cycles on 3D substrates. The elements detected are denoted by labels.","id":"train/atomic-layer-deposition/experimental-usecase/30/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/30/figure_7","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The cross-section SEM image shows a continuous film coating the 3D structure. The layer follows both the top surface and the slanted sidewalls. No obvious thinning or breaks are visible.\"},{\"panel_id\":\"b\",\"text\":\"The Si EDX map highlights the underlying substrate. The signal is strong below the film and drops sharply inside the coated region. This clearly separates substrate from deposited layer.\"},{\"panel_id\":\"c\",\"text\":\"The Fe EDX map outlines the film region across the full cross section. The signal follows the same geometry seen in the SEM image. This indicates uniform iron incorporation along sidewalls and horizontal surfaces.\"},{\"panel_id\":\"d\",\"text\":\"The O EDX map closely overlaps with the Fe distribution. Oxygen is present throughout the same region as iron. This confirms that the deposited layer is an iron oxide film rather than metallic Fe.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Si.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Silicon and oxygen are more or less homogeneously distributed in the areas where they are supposed to be. Iron on the other side shows fluctuations in density, even in the iron oxide layer.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Iron (Fe), and oxygen (O).\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The image shows the Fe content.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, the Fe appears to be closest to the surface of the film.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film has a higher O content than the Fe, so the white color in the figure is more intense for the first case.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the figure it can be seen that iron atoms are present all through the sample, even in the silicon substrate. This indicates that iron diffuses into the substrate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Uniform elemental incorporation across the 3D structure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Fe map shows signal not only near the trench opening but also extending down the trench, including the bottom region. Additionally, the O map shows a corresponding distribution, consistent with an iron oxide film rather than isolated contamination. Together with the SEM cross-section, this supports the conclusion that the film can be grown conformally into high aspect-ratio (~1:20) trenches using the same cycle timing as on planar substrates.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Conformal film growth along trench walls and bottoms, Uniform thickness of the iron oxide layer (~72 nm), Depth-resolved elemental distribution of Fe and O\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At the interface between the silicon substrate and iron oxide a different density of oxygen atoms is measured than in the bulk iron oxide. This indicates that there is likely a SiO2 interface layer.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Oxygen signal (panel d) closely matches the spatial distribution of the Iron signal (panel c). Both signals are concentrated in the corrugated top layer, confirming that the deposited film is an iron oxide compound (likely Fe₂O₃ or Fe₃O₄) rather than pure iron.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure shows that ALD-grown iron oxide films can coat complex 3D structures uniformly, maintaining consistent thickness and conformality even in deep trenches. The EDX mappings confirm that both iron and oxygen are present throughout the film depth, indicating that the deposition process achieves complete coverage and stoichiometry. This suggests that such films could be reliably used in devices requiring high surface-area coatings or patterned 3D architectures.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"From the 3D structure upwards vertical lines can be identified which can be grainboundaries or local density fluctuations.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film thickness appears continuous along both horizontal and inclined surfaces, with no visible thinning at corners or sidewalls. This indicates that precursor transport and surface reactions occur uniformly throughout the 3D geometry. Such behavior is consistent with self-limiting ALD chemistry enabling conformal coverage of high-aspect-ratio features.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Modern semiconductor devices, such as FinFETs or 3D NAND flash, rely on complex, non-planar architectures to increase transistor density and performance. The ability to deposit functional materials (dielectrics, conductors) uniformly over these vertical and recessed features ensures consistent electrical behavior and prevents defects like voids or electrical shorts.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"(a) Cross-section SEM image of the trench + film\\n\\n(b) Si EDX map (substrate/trench geometry)\\n\\n(c) Fe EDX map (film penetration/conformality)\\n\\n(d) O EDX map (oxide co-location with Fe)\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ALD proceeds through self-limiting surface reactions, which helps maintain uniform growth even when reactant transport is constrained in narrow features. If precursor exposure and purge are sufficient, each surface (top, sidewalls, bottom) can reach similar surface saturation per cycle. The observed Fe/O presence along the trench depth is consistent with that expectation for ALD-type conformal coverage.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Many target applications for functional oxides (including magnetic or catalytic coatings) involve 3D, high-surface-area structures where performance depends on coating all internal surfaces. Conformal growth ensures the properties measured on planar samples can plausibly translate to 3D integration. This figure provides direct evidence that the process conditions used here can coat deep trenches rather than only planar substrates.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":5,"y":12,"width":321,"height":301},{"panel_id":"b","x":347,"y":4,"width":318,"height":304},{"panel_id":"c","x":6,"y":319,"width":324,"height":301},{"panel_id":"d","x":343,"y":321,"width":320,"height":297}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/Kaupo Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":667,"height":623,"image_format":"jpeg","image_sha256":"d5e0f2216e10c78772a9ebf2800cd114ff50381ed9754844acbede17b80cdbc6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_33_figure_6.jpg","caption":"Figure 6 Plane-view SEM of ALD Cu on $\\mathrm{SiO}_2$ substrate (a) and $\\mathrm{Co / SiO}_2$ substrate (b).","id":"train/atomic-layer-deposition/experimental-usecase/33/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/33/figure_6","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":32,"width":348,"height":346},{"panel_id":"b","x":352,"y":33,"width":338,"height":343}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/BOOYONG S. LIM et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":694,"height":381,"image_format":"jpeg","image_sha256":"dae32a07cf36041c8f491709c49071e67caaabc7d9523219a07f4801cbfd000c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_33_figure_7.jpg","caption":"Figure 7 Cross-sectional SEM of ALD Cu/Co inside holes with an aspect ratio of about 10:1.","id":"train/atomic-layer-deposition/experimental-usecase/33/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/33/figure_7","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":586,"height":678}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/BOOYONG S. LIM et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":586,"height":678,"image_format":"jpeg","image_sha256":"c059c49380314b5eb7043c6e0694ae72508fed8c7d7c03fc76cfdca9c1c2fdf5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_36_fig_7.jpg","caption":"Fig. 7 Atomic force microscopy images of the conventional HEMT and the $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ MOS-HEMT","id":"train/atomic-layer-deposition/experimental-usecase/36/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/36/fig_7","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows an atomic force microscopy image of the conventional HEMT.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows an atomic force microscopy image of the Ga2O3 MOS-HEMT.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The conventional HEMT with a RMS value of 0.532 nm.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Ga2O3 MOS-HEMT.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Ga2O3 MOS-HEMT has the lowest RMS value compared to the conventional AlGaN HEMT.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, this could mean that both surfaces are smooth.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":9,"width":464,"height":474},{"panel_id":"b","x":489,"y":12,"width":461,"height":471}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/Huan-Yu Shih et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":950,"height":483,"image_format":"jpeg","image_sha256":"aa54b0c0b76bac9d52a5df9d740af4f7bbbdb7c262ce42b588a9e7d7cb782d9d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_4_fig_6.jpg","caption":"Fig. 6. AFM images of the $\\mathrm{HfO_2}$ films grown onto Si(100) at a) $200^{\\circ}\\mathrm{C}$ , and b) $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/4/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/4/fig_6","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":12,"y":15,"width":641,"height":435},{"panel_id":"b","x":12,"y":479,"width":641,"height":449}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":653,"height":928,"image_format":"jpeg","image_sha256":"7d82ab8e4ba2e3b583f778c2a001c75227148c1ce9148eb84779841160ea22f5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_40_fig_5.jpg","caption":"Fig. 5. Plan-view TEM micrographs of (a) TiN and (b) Ti-Si-N prepared by PEALD at $350^{\\circ}\\mathrm{C}$","id":"train/atomic-layer-deposition/experimental-usecase/40/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/40/fig_5","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Plan-view TEM micrograph of a TiN film deposited by PEALD at 350 °C, showing a nanocrystalline microstructure with visible grain contrast at the ~10 nm scale.\"},{\"panel_id\":\"b\",\"text\":\"Plan-view TEM micrograph of a Ti–Si–N film deposited by PEALD at 350 °C, showing a much more homogeneous contrast with no clearly resolved grains at the ~10 nm scale.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Polycrystalline with clear grain contrast and lattice fringes.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Silicon addition (≈11 at.%) completely suppresses crystallization, transforming the film from polycrystalline (a) to fully amorphous (b).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Fully amorphous – completely featureless, no grains or lattice fringes at 10 nm scale.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":5,"y":5,"width":569,"height":473},{"panel_id":"b","x":5,"y":519,"width":569,"height":462}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":575,"height":983,"image_format":"jpeg","image_sha256":"dec607a840f61348abe5b16d99fc6da76f02a56078ec3b0ca88d97864488c260","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_41_fig_3.jpg","caption":"FIG. 3. High resolution TEM image showing a $20\\mathrm{nm}$ thick $\\mathrm{Al}_2\\mathrm{O}_3$ film on $c$ -Si after a $30\\mathrm{min}$ annealing at $425^{\\circ}\\mathrm{C}$ in a $\\mathrm{N}_2$ environment.","id":"train/atomic-layer-deposition/experimental-usecase/41/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/41/fig_3","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a cross-sectional view of a layered material structure, including Al2O3, SiOx, and c-Si from top to bottom.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The colors of the layers indicate the density which say something on the different materials.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The crystallic Si substrate shows ordered dots in a constant array, whereas the alumina layer is unorganized.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The crystaline Si has the highest density, followed by the alumina, with the silicon oxide having the lowest density.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The silicon oxide thickness is around 2 nm.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":1,"width":529,"height":529}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/Hoex et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":536,"height":531,"image_format":"jpeg","image_sha256":"5d9012c95bf5492c6dc3304929933e6eea400d9afb009088432dc2f226910b79","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_42_figure_4.jpg","caption":"Figure 4. Scanning electron micrographs of deposited copper films. (a) Plan view of copper nanoparticles deposited using a 1 s pulse length. (b) Plan view of crystalline copper deposited using a 4 s pulse length. (c) Plan view of crystalline copper deposited using a 6 s pulse length. (d) A profile of crystalline copper deposited using a 6 s pulse length.","id":"train/atomic-layer-deposition/experimental-usecase/42/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/42/figure_4","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":558,"height":412},{"panel_id":"b","x":576,"y":0,"width":554,"height":412},{"panel_id":"c","x":0,"y":427,"width":559,"height":412},{"panel_id":"d","x":578,"y":427,"width":552,"height":412}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/Coyle et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1130,"height":839,"image_format":"jpeg","image_sha256":"7856f25246500ea3766152283e6c024866284887da783e38230ca64bb98f27e2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_44_figure_1.jpg","caption":"Figure 1. FE-SEM images of surface morphology of ALD thin films synthesized at $170^{\\circ}\\mathrm{C}$ for (a) 700 cycles (sample # PbTe-9), (b) 3000 cycles (sample # PbTe-11), (c) 1000 cycles (sample # PbSe-9), and (d) 4000 cycles (sample # PbSe-11). Sample numbers are indicated by $*$ in Tables I and II.","id":"train/atomic-layer-deposition/experimental-usecase/44/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/44/figure_1","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":0,"width":500,"height":378},{"panel_id":"b","x":505,"y":0,"width":500,"height":380},{"panel_id":"c","x":3,"y":377,"width":504,"height":368},{"panel_id":"d","x":505,"y":377,"width":496,"height":370}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/Zhang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1005,"height":753,"image_format":"jpeg","image_sha256":"6724c13befd60da85a625f4ab67a73fa0b3df4eb6f6ac09638ae163c7930417c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_44_figure_2.jpg","caption":"Figure 2. FE-SEM micrograph showing a cross-sectional view of cleavage side of ALD at $170^{\\circ}\\mathrm{C}$ ; (a) 3000 cycles (sample # PbTe-11, Table I), and (b) 4000 cycles (sample # PbSe-12, Table II).","id":"train/atomic-layer-deposition/experimental-usecase/44/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/44/figure_2","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":0,"width":504,"height":374},{"panel_id":"b","x":505,"y":3,"width":496,"height":365}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/Zhang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1005,"height":375,"image_format":"jpeg","image_sha256":"36984da539b931b555851216eba63f15ff473edab18017c1fe4449e4dd63dce1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_44_figure_3.jpg","caption":"Figure 3. TEM cross-sectional images of ALD deposited PbTe film (sample # PbTe-9, Table I); (a) low magnification overview of the film, nucleating in a Volmer-Weber type of island growth mode, and (b) high resolution microstructure of individual PbTe crystallite.","id":"train/atomic-layer-deposition/experimental-usecase/44/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/44/figure_3","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":6,"width":497,"height":487},{"panel_id":"b","x":504,"y":2,"width":497,"height":491}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/Zhang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1003,"height":500,"image_format":"jpeg","image_sha256":"9beb0e5035c4b621004130d79d54f455195ccb924bb02b231364e82fe3d63e6b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_44_figure_5.jpg","caption":"Figure 5. HAADF-STEM image and the corresponding EDS elemental maps of Pb, Se and Te from individual films of ALD PbTe and ALD PbSe. The orange window marks the area mapped and the yellow window represents the drift correction are used.","id":"train/atomic-layer-deposition/experimental-usecase/44/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/44/figure_5","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":370},{"panel_id":"b","x":8,"y":395,"width":660,"height":423}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/Zhang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":670,"height":817,"image_format":"jpeg","image_sha256":"29c524f864a4c38446cdcd31464990067e30d1d5a65a2320783e427cb140bae8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_44_figure_6.jpg","caption":"Figure 6. FE-SEM images of basic unit cell for nanolaminate superlattice structures consisting of 5000 ALD cycles (PbTe) plus 4000 cycles (PbSe) on top of it (a) surface morphology (b) cross-sectional view.","id":"train/atomic-layer-deposition/experimental-usecase/44/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/44/figure_6","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":1,"width":585,"height":427},{"panel_id":"b","x":592,"y":1,"width":576,"height":422}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/Zhang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1172,"height":430,"image_format":"jpeg","image_sha256":"ff391a30f50910c74f074236efc041d5d02d29a4ee5638624624484298d94f08","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_44_figure_7.jpg","caption":"Figure 7. HAADF-STEM image and the corresponding EDS elemental maps of Pb, Se and Te from the PbTe/PbSe clearly delineates two distinct layers of a basic nanolaminate composite with ALD PbSe on top of ALD PbTe. The orange window marks the area mapped and the yellow window represents the drift correction are used.","id":"train/atomic-layer-deposition/experimental-usecase/44/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/44/figure_7","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":1,"width":679,"height":325}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/Zhang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":681,"height":328,"image_format":"jpeg","image_sha256":"d0fa443cadd3d73c8ae95e5ce6ebdf5d2c0560e0ff01b8f1cf9d82549fc12cab","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_50_fig_8.jpg","caption":"Fig. 8 Transmission electron microscopy images: (a) bright-field (BF) TEM of two ZnO:B films $(m = 30$ and $m = 19)$ and a ZnO:Al film $(m = 18)$ ; and (b) high-angle annular dark field (HAADF) STEM images of ZnO:B $(m = 30)$ and ZnO:Al $(m = 18)$ . The B- and Al-doped layers are indicated by arrows.","id":"train/atomic-layer-deposition/experimental-usecase/50/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/50/fig_8","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":9,"y":14,"width":870,"height":210},{"panel_id":"b","x":9,"y":256,"width":867,"height":163}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/Garcia-Alonso et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":878,"height":428,"image_format":"jpeg","image_sha256":"8932befd3a2b775e90de975c4e260737ed791e7034cd97f56b6ac367fced669f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_54_figure_9.jpg","caption":"Figure 9. SEM images of the Cu-TiN-Si stack: (a) the smooth as-deposited Cu film and (b) the roughened Cu film after annealing at $700^{\\circ}\\mathrm{C}$ . (c) The as-deposited closed Cu film has become discontinuous after annealing, exposing areas of the underlying surface.","id":"train/atomic-layer-deposition/experimental-usecase/54/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/54/figure_9","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":8,"y":15,"width":600,"height":583},{"panel_id":"b","x":8,"y":630,"width":600,"height":574},{"panel_id":"c","x":8,"y":1237,"width":600,"height":583}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":608,"height":1820,"image_format":"jpeg","image_sha256":"6e44fc1ad59251918225a336d7129c084ca0941cdc405e7e29653487bcdfa45e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_57_figure_2.jpg","caption":"Figure 2. (a) Cross-sectional field-emission scanning electron microscopy (FESEM) images of CsI films deposited on Si with 400 cycles (left) and 3300 cycles (right). (b) Top-down FESEM images of CsI films deposited on Si with 300 cycles at different deposition temperatures $T_{\\mathrm{Dep}}$ . (c) GIXRD patterns of CsI films on Si deposited at different temperatures. CsI reference pattern ICDD 6-311 is indicated as red bars. (d) Relative atomic force microscopy (AFM) roughness $R_{\\mathrm{q}}$ calculated as absolute $R_{\\mathrm{q}}$ divided by the film thickness. (e) AFM images of CsI films deposited at 150 and $250^{\\circ}\\mathrm{C}$ . Unless otherwise evident, data are from films deposited with 300 cycles at $150^{\\circ}\\mathrm{C}$ , pulse durations of 1.5 and $0.5\\mathrm{s}$ for Cs(btsa) and $\\mathrm{SnI_4}$ , respectively, and $1.0\\mathrm{s}$ purge durations.","id":"train/atomic-layer-deposition/experimental-usecase/57/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/57/figure_2","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"stacked spectra chart"},{"panel_id":"d","label":"line chart"},{"panel_id":"e","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays SEM images of CsI films deposited at various temperatures.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows SEM images of CsI films deposited at different temperatures.\"},{\"panel_id\":\"c\",\"text\":\"The figure presents Grazing Incidence X-ray Diffraction (GIXRD) patterns for Cesium Iodide (CsI) films deposited on Silicon at temperatures ranging from 150°C to 350°C. All deposited films exhibit diffraction peaks that perfectly match the reference pattern for cubic CsI (ICDD 6-311)\"},{\"panel_id\":\"d\",\"text\":\"This figure plots the relative surface roughness (Rq normalized by film thickness) of ALD-grown films against deposition temperature, showing roughness decreases to a minimum around 225-250°C before increasing at higher temperatures.\"},{\"panel_id\":\"e\",\"text\":\"The figure compares AFM images of CsI films deposited at different temperatures and thicknesses.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"| Temperature (°C) | 2θ (°) | Assigned Plane |\\n|-----------------|-------|----------------|\\n| 150 | 28.5 | (200) |\\n| 150 | 33.0 | (211) |\\n| 150 | 36.0 | (220) |\\n| 150 | 47.5 | (310) |\\n| 150 | 56.0 | (222) |\\n| 150 | 69.0 | (321) |\"},{\"panel_id\":\"e\",\"text\":\"| Deposition temperature (°C) | Relative roughness Rq (%) |\\n|-----------------------------|---------------------------|\\n| 150 | 5 |\\n| 170 | 7 |\\n| 190 | 10 |\\n| 210 | 15 |\\n| 230 | 22 |\\n| 250 | 35 |\\n| 270 | 55 |\\n| 290 | 80 |\\n| 305 | 95 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Roughness decreases with temperature up to ~225°C, then increases. The minimum occurs due to enhanced adatom surface diffusion at moderate temperatures, which smoothens growth, while higher temperatures may induce excessive decomposition or 3D islanding, increasing roughness.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the minimal roughness at 225°C is beneficial for a gate dielectric. A smoother film reduces interfacial scattering and charge trapping, improving channel mobility and threshold voltage stability. However, the electrical quality of the dielectric itself must also be verified at this temperature.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cesium Iodide (CsI). The peaks align perfectly with the ICDD 6-311 reference bars for CsI.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To save thermal budget/energy. Since there is no gain in crystal quality at 350°C, the lower temperature is preferred to protect the substrate and reduce costs.\"}]}]","bbox":[{"panel_id":"a","x":34,"y":1,"width":637,"height":198},{"panel_id":"b","x":32,"y":242,"width":642,"height":219},{"panel_id":"c","x":717,"y":1,"width":462,"height":437},{"panel_id":"d","x":698,"y":425,"width":473,"height":292},{"panel_id":"e","x":717,"y":724,"width":456,"height":181}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/Weia et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1178,"height":914,"image_format":"jpeg","image_sha256":"23b99e485fb98f6e1465fde5708f13e6dc925739fcd47d0b5aa9f1121d2da1b5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_57_figure_5.jpg","caption":"Figure 5. Panels (a), (c), (e), (g), and (i) show top-down SEM images of samples where $\\mathrm{PbI}_2$ was deposited on top of the CsI film. Panels (b), (d), (f), (h), and (j) show cross-sectional SEM images of the same samples. Panel (k) shows a cross-sectional FESEM image of a hole with 10:1 AR in a patterned Si substrate. Similar to the other samples, also on this sample, CsI film was deposited first, followed by $\\mathrm{PbI}_2$ deposition. CsI films (100 nm) were deposited at $150^{\\circ}\\mathrm{C}$ with 300 cycles. The pulse durations were $1.5\\mathrm{s}$ for $\\mathrm{Cs(btsa)}$ and $1.0\\mathrm{s}$ for $\\mathrm{SnI}_4$ and purge durations were $1.0\\mathrm{s}$ . In the $\\mathrm{PbI}_2$ deposition, the durations of the precursor pulses were 0.8 and $2.0\\mathrm{s}$ for $\\mathrm{Pb(btsa)}_2$ and $\\mathrm{SnI}_4$ , respectively, whereas purge durations were $1.0\\mathrm{s}$ .","id":"train/atomic-layer-deposition/experimental-usecase/57/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/57/figure_5","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"},{"panel_id":"g","label":"image panel"},{"panel_id":"h","label":"image panel"},{"panel_id":"i","label":"image panel"},{"panel_id":"j","label":"image panel"},{"panel_id":"k","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":12,"y":3,"width":270,"height":197},{"panel_id":"b","x":287,"y":0,"width":276,"height":206},{"panel_id":"c","x":4,"y":195,"width":274,"height":201},{"panel_id":"d","x":283,"y":199,"width":280,"height":193},{"panel_id":"e","x":4,"y":395,"width":282,"height":191},{"panel_id":"f","x":285,"y":387,"width":280,"height":205},{"panel_id":"g","x":4,"y":585,"width":276,"height":191},{"panel_id":"h","x":283,"y":585,"width":280,"height":195},{"panel_id":"i","x":6,"y":780,"width":276,"height":180},{"panel_id":"j","x":285,"y":778,"width":278,"height":186},{"panel_id":"k","x":561,"y":1,"width":276,"height":963}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/Weia et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":842,"height":964,"image_format":"jpeg","image_sha256":"b488eaf5047659f74d1336b23bd3351b8932df72cf6a01b474631bc6070f40f4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_64_fig_3.jpg","caption":"FIG. 3. AFM images of $2\\mu \\mathrm{m}\\times 2\\mu \\mathrm{m}$ regions of (a) a $45\\mathrm{-nm}$ platinum film grown at $250^{\\circ}\\mathrm{C}$ with a total $\\mathbb{Z}$ -range of $6.1~\\mathrm{nm}$ and b) a $50 - \\mathrm{nm}$ platinum film grown at $300^{\\circ}\\mathrm{C}$ with a total $\\mathbb{Z}$ -range of $9.7~\\mathrm{nm}$ .The $\\mathbb{Z}$ -scale for both images spans $10\\mathrm{nm}$","id":"train/atomic-layer-deposition/experimental-usecase/64/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/64/fig_3","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"AFM image of a 45-nm platinum film grown at 250 °C over a 2 µm × 2 µm region, with a z-range of 6.1 nm and RMS roughness of 0.8 nm. The surface shows relatively small grains.\"},{\"panel_id\":\"b\",\"text\":\"AFM image of a 50-nm platinum film grown at 300 °C over a 2 µm × 2 µm region, with a z-range of 9.7 nm and RMS roughness of 1.2 nm. The surface shows larger grains and increased roughness compared to the 250 °C film.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Parameter | Value |\\n|---|---|\\n| Film thickness | 45 nm |\\n| Deposition temperature | 250 °C |\\n| Scan area | 2 µm × 2 µm |\\n| Z-range | 6.1 nm |\\n| RMS surface roughness | 0.8 nm |\\n| Grain characteristics | Smaller grains compared to 300 °C film |\"},{\"panel_id\":\"b\",\"text\":\"| Parameter | Value |\\n|---|---|\\n| Film thickness | 50 nm |\\n| Deposition temperature | 300 °C |\\n| Scan area | 2 µm × 2 µm |\\n| Z-range | 9.7 nm |\\n| RMS surface roughness | 1.2 nm |\\n| Grain characteristics | Larger grains compared to 250 °C film |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the deposition temperature to 300 °C results in larger grain sizes and slightly higher surface roughness compared to films grown at 250 °C. However, the films remain smoother than similar films deposited using air as the oxygen source in previous studies. This improvement is likely due to the higher nucleation density achieved with the higher oxygen partial pressure, which promotes more uniform film growth and reduces roughness.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The RMS surface roughness increases from 0.8 nm at 250 °C to 1.2 nm at 300 °C.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"250 °C (45 nm film): Smaller grains, RMS roughness 0.8 nm, z-range 6.1 nm, 300 °C (50 nm film) Larger grains, RMS roughness 1.2 nm, z-range 9.7 nm\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":603,"height":607},{"panel_id":"b","x":0,"y":659,"width":603,"height":602}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"64","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":603,"height":1294,"image_format":"jpeg","image_sha256":"d2ff9a89360322c3f7ec8aedb2a56fc203b7813bf8a54e5fddcf4e9a045eceb7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_9_d0c00dec3627c492e7e1f2f448ee4f5d8fa71fbdb9057d123f4c3d482cdd5f4a.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/9/d0c00dec3627c492e7e1f2f448ee4f5d8fa71fbdb9057d123f4c3d482cdd5f4a","sample_id":"atomic-layer-deposition/experimental-usecase/9/d0c00dec3627c492e7e1f2f448ee4f5d8fa71fbdb9057d123f4c3d482cdd5f4a","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This panel shows a cross-sectional electron microscopy image of a nanoscale device structure, illustrating excellent thickness control and conformal film coverage on high-aspect-ratio features such as metal and high-κ regions on silicon. It highlights the capability of low-temperature ALD to uniformly coat complex 3D architectures at the ~100 nm scale.\"},{\"panel_id\":\"b\",\"text\":\"This schematic illustrates the discrete, self-limiting nature of atomic layer deposition, where film thickness increases in well-defined nanometer- or sub-nanometer-scale steps with each process cycle. It emphasizes precise thickness control arising from the sequential, surface-controlled reaction mechanism.\"},{\"panel_id\":\"c\",\"text\":\"This panel presents an SEM image of a dense array of high-aspect-ratio nanostructures uniformly coated by ALD. The image demonstrates excellent conformality and uniformity over large areas and complex geometries, which is difficult to achieve with conventional deposition techniques.\"},{\"panel_id\":\"d\",\"text\":\"This panel shows a transmission electron microscopy image of a single, elongated nanostructure uniformly coated along its entire length. The consistent coating thickness confirms the ability of ALD to provide conformal coverage on isolated, curved, and one-dimensional nanoscale objects.\"},{\"panel_id\":\"e\",\"text\":\"This cross-sectional SEM image highlights multilayer film growth on a structured substrate, showing sharp interfaces and uniform layer thickness even within rough or porous regions. The image underscores the advantage of low-temperature ALD for depositing high-quality films without damaging underlying materials.\"},{\"panel_id\":\"f\",\"text\":\"This panel demonstrates a flexible electronic device incorporating ALD-processed layers, bent without mechanical failure. It illustrates how low-temperature, conformal ALD enables integration of functional thin films into flexible and wearable electronic applications.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Discrete process step|Nanometer-level thickness (schematic)|\\n|----------------------|--------------------------------------|\\n|0|~0 nm|\\n|1|Increasing|\\n|2|Increasing|\\n|3|Increasing|\\n|4|Increasing|\\n|...|...|\\n|N|~Linear increase|\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"GaP nanowires, CIGS absorber layers, and FinFET semiconductor fins.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure illustrates the need for highly conformal, pinhole-free thin films in advanced technologies like FinFET transistors, nanowire devices, CIGS solar cells, and flexible OLEDs. These structures often involve intricate geometries or temperature-sensitive substrates, making precise, low-temperature deposition critical. Such regulated coatings directly influence device performance, reliability, and scalability.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"For constant electrical performance, FinFET fins must have homogeneous coverage on three-dimensional geometries, For accurate surface passivation, GaP nanowires require nanoscale ALD layers, Rough CIGS absorber layer — required pinhole-free buffer layers for optimal solar cell operation, Flexible OLED substrates — depend on low-temperature, mechanically stable films.\"}]}]","bbox":[{"panel_id":"a","x":91,"y":2,"width":232,"height":214},{"panel_id":"b","x":372,"y":2,"width":199,"height":213},{"panel_id":"c","x":94,"y":233,"width":226,"height":195},{"panel_id":"d","x":372,"y":232,"width":198,"height":196},{"panel_id":"e","x":94,"y":442,"width":221,"height":197},{"panel_id":"f","x":372,"y":444,"width":197,"height":194}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/9/images/d0c00dec3627c492e7e1f2f448ee4f5d8fa71fbdb9057d123f4c3d482cdd5f4a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/9/images/d0c00dec3627c492e7e1f2f448ee4f5d8fa71fbdb9057d123f4c3d482cdd5f4a.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/9/H.C.M. Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"not_found"},"width":570,"height":642,"image_format":"jpeg","image_sha256":"48cec1748865ecfa809582df6e1268e984b131af40b0c6ae2cd6ba4c2d67d8de","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_10_figure_2.jpg","caption":"Figure 2. (a) Photograph of a 4-in. Si(100) wafer covered with $10\\mathrm{nm}$ of a-Si:H with the letters $\\mathrm{^{\\circ}TU / e^{\\circ}}$ prepared using the direct-write ALD process of $\\mathrm{In}_2\\mathrm{O}_3{:}\\mathrm{H}$ . The number of ALD cycles was 400 and the thickness of the $\\mathrm{In}_2\\mathrm{O}_3{:}\\mathrm{H}$ was $\\sim 35 \\mathrm{nm}$ . (b) XPS signals for the $\\mathrm{In}3\\mathrm{d}_{5 / 2}$ and In $3\\mathrm{d}_{3 / 2}$ binding energy measured for two distinctive points inside (black) and outside (red) the patterned area.","id":"train/atomic-layer-deposition/simulation-usecase/10/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/10/figure_2","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Photograph of a 4-inch Si(100) wafer coated with 10 nm a-Si:H, showing the letters \\\"TU/e\\\" patterned by direct-write ALD of In2O3:H (approximately 35 nm thick after 400 ALD cycles), demonstrating successful area-selective deposition at macroscopic scale.\"},{\"panel_id\":\"b\",\"text\":\"XPS spectra of the In 3d region comparing activated (black) and non-activated (red) areas. The activated area shows strong In 3d5/2 (approximately 444.5 eV) and In 3d3/2 (approximately 452 eV) peaks, while the non-activated area shows negligible indium signal, confirming excellent selectivity.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Binding energy (eV) | activated area (10^5 counts/s) | non-activated area (10^5 counts/s) |\\n|---|---|---|\\n| 439 | 0.05 | 0.05 |\\n| 441 | 0.10 | 0.05 |\\n| 442 | 0.15 | 0.05 |\\n| 443 | 0.50 | 0.05 |\\n| 444 | 1.80 | 0.05 |\\n| 445 | 2.90 | 0.05 |\\n| 446 | 1.60 | 0.05 |\\n| 447 | 0.50 | 0.05 |\\n| 448 | 0.20 | 0.05 |\\n| 449 | 0.15 | 0.05 |\\n| 450 | 0.30 | 0.05 |\\n| 451 | 1.00 | 0.05 |\\n| 452 | 1.90 | 0.05 |\\n| 452.5 | 2.10 | 0.05 |\\n| 453 | 1.80 | 0.05 |\\n| 454 | 0.70 | 0.05 |\\n| 455 | 0.25 | 0.05 |\\n| 457 | 0.10 | 0.05 |\\n| 459 | 0.10 | 0.05 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"It compares XPS spectra from two locations on the same sample.\\n\\n, Black curve: activated area\\n\\n, Red curve: non-activated area\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The activated area shows strong peaks, while the non-activated area stays close to the baseline across the binding-energy window. This indicates that indium-containing material is present (or much thicker) only on the activated region. In other words, the data support strong area selectivity in the deposition process.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"XPS is surface-sensitive; if nucleation had occurred on the non-activated area, even a thin initial film would typically produce detectable indium-related features. The near-baseline response implies the surface remains largely uncovered by the deposited In₂O₃:H (or is below detection / extremely thin). This is consistent with a long nucleation delay on the non-activated, H-terminated Si surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The optical photo shows that a macroscopic pattern is produced, but it does not by itself prove chemical selectivity. The XPS comparison verifies that the patterned regions differ strongly in composition (indium signal present vs absent/very low). Together, they provide both a visual and chemical validation of selective growth suitable for direct-write patterning.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":310,"height":232},{"panel_id":"b","x":311,"y":4,"width":356,"height":267}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":667,"height":278,"image_format":"jpeg","image_sha256":"fce7ca7cce68a711e92532e21f236dc132980edf45f26a990b2760cfe8d55435","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_10_figure_3.jpg","caption":"Figure 3. (a) Photograph of $\\mathrm{In}_2\\mathrm{O}_3\\cdot \\mathrm{H}$ lines being 3.0 and $0.8\\mathrm{mm}$ wide as prepared by the direct-write ALD process with 400 cycles. XPS line scans for the patterns depicted in (a) showing the atomic percentages related to (b) $\\mathrm{In}_2\\mathrm{O}_3$ (In $3\\mathrm{d}_5$ $\\mathrm{I}_2$ and O 1s) and (c) the Si substrate (Si 2p).","id":"train/atomic-layer-deposition/simulation-usecase/10/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/10/figure_3","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Optical photo of a patterned/printed region on a substrate, used to show a visible contrast between deposited and non-deposited areas along a line.\"},{\"panel_id\":\"b\",\"text\":\"EDX line-scan composition across the pattern: In and O (from In₂O₃:H) atomic percentages vs distance (mm). In and O are high on the deposited regions (near the ends of the scan) and drop to ~0 over the non-deposited middle region, indicating strong lateral selectivity.\"},{\"panel_id\":\"c\",\"text\":\"EDX line-scan Si atomic percentage vs distance. Si is low where In/O are high (film-covered regions) and high in the central region where In/O are near zero (exposed substrate), complementing panel (b).\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"| Distance (mm) | In (Atomic %) | O (In2O3:H) (Atomic %) |\\n|---|---|---|\\n| 0.0 | 8.0 | 12.0 |\\n| 0.8 | 31.0 | 51.5 |\\n| 1.6 | 31.0 | 51.0 |\\n| 2.4 | 31.0 | 55.0 |\\n| 3.2 | 25.0 | 41.0 |\\n| 4.0 | 1.5 | 2.0 |\\n| 4.8 | 0.0 | 0.0 |\\n| 5.6 | 0.0 | 0.0 |\\n| 6.4 | 0.0 | 0.0 |\\n| 7.2 | 0.0 | 0.0 |\\n| 8.0 | 0.0 | 0.0 |\\n| 8.8 | 0.0 | 0.0 |\\n| 9.6 | 0.0 | 0.0 |\\n| 10.4 | 0.0 | 0.0 |\\n| 11.2 | 0.0 | 0.0 |\\n| 12.0 | 0.0 | 0.0 |\\n| 12.8 | 0.0 | 0.0 |\\n| 13.6 | 0.0 | 0.0 |\\n| 14.4 | 0.0 | 0.5 |\\n| 15.2 | 14.0 | 24.0 |\\n| 16.0 | 30.0 | 51.0 |\\n| 16.8 | 12.0 | 20.0 |\\n| 17.6 | 0.5 | 0.5 |\\n| 18.4 | 0.5 | 0.5 |\"},{\"panel_id\":\"c\",\"text\":\"| Distance (mm) | Si (Atomic %) |\\n|---|---|\\n| 0.0 | 47.0 |\\n| 0.8 | 2.0 |\\n| 1.6 | 2.0 |\\n| 2.4 | 2.0 |\\n| 3.2 | 13.0 |\\n| 4.0 | 66.0 |\\n| 4.8 | 72.0 |\\n| 5.6 | 73.0 |\\n| 6.4 | 73.0 |\\n| 7.2 | 73.5 |\\n| 8.0 | 74.0 |\\n| 8.8 | 73.0 |\\n| 9.6 | 75.0 |\\n| 10.4 | 74.0 |\\n| 11.2 | 74.0 |\\n| 12.0 | 74.0 |\\n| 12.8 | 74.5 |\\n| 13.6 | 74.0 |\\n| 14.4 | 73.0 |\\n| 15.2 | 35.0 |\\n| 16.0 | 3.0 |\\n| 16.8 | 37.0 |\\n| 17.6 | 72.0 |\\n| 18.4 | 73.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It quantifies the lateral chemical contrast over a macroscopic distance, not just a single point. The steep transitions between In/O-rich and Si-rich regions provide a practical measure of pattern edge sharpness and selectivity. This supports claims that the process can produce patterned films over device-relevant length scales.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"(b) Atomic % of In and O (In₂O₃:H) vs distance\\n\\n, (c) Atomic % of Si vs distance\\n\\n, x-axis (both): distance (mm) along the measured line scan\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies that nucleation (and thus measurable film growth) is strongly suppressed on the non-activated surface over that lateral region. If significant nucleation had occurred, In and O would remain detectible across a wider span. The sharp localization of In/O is consistent with a large nucleation delay difference between activated and non-activated areas.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Where In and O are high in (b), Si is low in (c), indicating those regions are covered by the In₂O₃:H film. In the middle section of the scan, In and O drop to ~0 while Si rises to a high level, indicating exposed substrate. This complementary behavior supports strong spatial selectivity of the deposition.\"}]}]","bbox":[{"panel_id":"c","x":3,"y":519,"width":504,"height":363},{"panel_id":"b","x":0,"y":208,"width":507,"height":308},{"panel_id":"a","x":85,"y":-1,"width":425,"height":208}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":511,"height":881,"image_format":"jpeg","image_sha256":"0600ff8fe2a3f6dd1d547d24d35e9a5794b03425f27c5a3f61332c6a58398ae6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_10_figure_6.jpg","caption":"Figure 6. Pattern prepared by direct-write ALD of a $35~\\mathrm{nm}$ thick $\\mathrm{In}_2\\mathrm{O}_3{:}\\mathrm{H}$ film on a flexible stainless steel foil covered with $20~\\mathrm{nm}$ of a-Si:H. This serves as a first demonstrator of the capability of the direct-write ALD process for large-area and flexible electronics.","id":"train/atomic-layer-deposition/simulation-usecase/10/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/10/figure_6","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Photograph of a gloved hand holding a patterned, translucent thin-film sample showing the “TU/e” logo as a visible contrast feature, consistent with selective deposition/patterning of a transparent conductive oxide film.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"A gloved hand holding a thin-film sample\\n\\n, A visible “TU/e” patterned region on the sample\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The visible contrast indicates that the film (or its thickness/composition) differs between the patterned and non-patterned regions. In this paper’s context, that is consistent with selective deposition occurring only on the activated areas. The pattern being visible at macroscopic scale suggests the selectivity is strong enough to be observed without microscopy.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Many oxide TCO films transmit visible light when sufficiently thin and smooth, so the substrate remains visible through them. At the same time, differences in thickness, refractive index, or free-carrier absorption between coated and uncoated regions can create a noticeable color/contrast. That makes patterned regions detectable even when the film is broadly transparent.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It provides an immediate demonstration that the method can produce large-area, user-visible patterns, not just nanoscale selectivity at a single test spot. This supports potential use in patterned TCO features for electronics and optoelectronics.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":499,"height":559}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":500,"height":564,"image_format":"jpeg","image_sha256":"4b20731074011a398d81c81ee9a2f99a9004cf086922508ad157a68e195141a0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_2.jpg","caption":"Figure 2: Transmission electron microscopic image of $\\mathrm{Al}_2\\mathrm{O}_3$ -coated MWCNTs. The insert shows a cylindrical $\\mathrm{Al}_2\\mathrm{O}_3$ layer (A) coating a particular multi-walled CNTs and the multi walls (B) of this multi-walled nanotube.","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_2","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":3,"width":995,"height":705}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1003,"height":714,"image_format":"jpeg","image_sha256":"0d6438c34fb058f6b85450a4eaf82a6a7d6e396b5a5b1ce920859b7d987ca423","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_10.jpg","caption":"Fig. 10 - Snapshots of the flow field developed during the TMA exposure, inside the reactor chamber: a) 10 ms, b) 20 ms, c) 30 ms, d) 60 ms, after the start of the TMA exposure.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_10","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_10","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":8,"y":14,"width":446,"height":610},{"panel_id":"b","x":722,"y":14,"width":456,"height":613},{"panel_id":"c","x":9,"y":697,"width":450,"height":606},{"panel_id":"d","x":727,"y":697,"width":439,"height":615}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1178,"height":1358,"image_format":"jpeg","image_sha256":"6c39412697f22b0f1062c7f03197ee0f137631f0d957e5fa4bae43721c02574f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_13.jpg","caption":"Fig. 13 - Snapshots of the flow field inside the reactor chamber: a) $10\\mathrm{ms}$ , b) $20\\mathrm{ms}$ , c) $60\\mathrm{ms}$ , d) $200\\mathrm{ms}$ after the start of the $\\mathrm{H}_2\\mathrm{O}$ pulse.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_13","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_13","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":9,"y":10,"width":441,"height":603},{"panel_id":"b","x":727,"y":12,"width":445,"height":611},{"panel_id":"c","x":8,"y":670,"width":441,"height":608},{"panel_id":"d","x":704,"y":670,"width":450,"height":604}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1172,"height":1339,"image_format":"jpeg","image_sha256":"98154f0bed104f15681226dc6f6f91fc537d910ee8e0427bfe4ec0c240dad330","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_5.jpg","caption":"Fig. 5 - a) Flow field predictions for the process parameters of Table 1, b) flow field predictions at 30 sccm top inlet flow.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_5","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":8,"y":8,"width":392,"height":543},{"panel_id":"b","x":602,"y":8,"width":398,"height":544}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1000,"height":622,"image_format":"jpeg","image_sha256":"bea7e2eaef9d2bb1301f1ace9d021449c996723da21cc894e40aebd9b20ed6bf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_36_figure_1.jpg","caption":"Figure 1. Surface morphologies observed using SEM and AFM: (a, e) bare Ti substrate, (b, f) ODTS-coated Ti, (c, g) ODPA-coated Ti, and (d, h) DDPA-coated Ti. Inset images show the WCA of the samples.","id":"train/atomic-layer-deposition/simulation-usecase/36/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/36/figure_1","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"},{"panel_id":"g","label":"image panel"},{"panel_id":"h","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The SEM image shows a smooth bare Ti surface with minimal visible texture; a water-contact-angle inset is included.\"},{\"panel_id\":\"b\",\"text\":\"The SEM image of ODTS-coated Ti shows a granular surface texture, with a corresponding WCA inset.\"},{\"panel_id\":\"c\",\"text\":\"The SEM image of ODPA-coated Ti exhibits a relatively uniform morphology compared with (b).\"},{\"panel_id\":\"d\",\"text\":\"The SEM image of DDPA-coated Ti shows a fine, homogeneous surface texture; a WCA inset is included.\"},{\"panel_id\":\"e\",\"text\":\"The AFM image of bare Ti shows limited height contrast and sparse surface features.\"},{\"panel_id\":\"f\",\"text\":\"The AFM image of ODTS-coated Ti shows a higher density of bright surface protrusions.\"},{\"panel_id\":\"g\",\"text\":\"The AFM image of ODPA-coated Ti shows many small, closely spaced nanoscale features.\"},{\"panel_id\":\"h\",\"text\":\"The AFM image of DDPA-coated Ti shows a uniform distribution of nanoscale features, with a displayed height scale up to ~20 nm.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"},{\"panel_id\":\"h\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"DDPA seems to form a more homogeneous layer compared with the other coatings, resulting in a fine and consistent texture. This uniformity probably helps achieve more predictable surface chemistry and potentially better coverage. It's likely why the WCA inset might differ from the granular ODTS one — smoother, more even coatings often give different wetting behavior.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The bare Ti substrate appears quite smooth in the SEM, with minimal surface texture or defects visible at the 1 μm scale. This clean, flat morphology is what you'd expect from a polished or etched metal prior to functionalization. It's a good baseline for comparing how the coatings alter the surface.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The AFM highlights a higher density of bright protrusions that correspond to elevated nanoscale structures. These likely stem from the way ODTS molecules assemble or aggregate during coating. It's noticeably rougher than the bare substrate, which suggests the coating introduces significant topography.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Much rougher — shows clear granular clusters instead of the smooth appearance of bare Ti.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":5,"width":265,"height":278},{"panel_id":"b","x":267,"y":3,"width":268,"height":280},{"panel_id":"c","x":532,"y":6,"width":268,"height":277},{"panel_id":"d","x":800,"y":0,"width":266,"height":288},{"panel_id":"e","x":6,"y":317,"width":260,"height":265},{"panel_id":"f","x":271,"y":311,"width":260,"height":269},{"panel_id":"g","x":533,"y":311,"width":262,"height":269},{"panel_id":"h","x":795,"y":313,"width":269,"height":269}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/Seunggi Seo et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1067,"height":584,"image_format":"jpeg","image_sha256":"5d800116015d9e34fb62598191b348d1e843b73c76818e6a046e3dcee2aadb4d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_5_figure_4.jpg","caption":"Figure 4. (a,b) Top-view SEM image of 35 EBID $\\mathrm{SiO_2}$ seed layers with an area of $500 \\times 500 \\mathrm{nm}^2$ and a thickness of $\\sim 1 \\mathrm{nm}$ . The high-magnification image in (b) shows a single pattern. (c,d) Top-view SEM image of a similar sample after 80 ALD cycles of $\\mathrm{ZnO}$ , deposited at 100 $^\\circ \\mathrm{C}$ . The high-magnification image in (d) shows a single pattern on which the polycrystalline $\\mathrm{ZnO}$ is clearly visible.","id":"train/atomic-layer-deposition/simulation-usecase/5/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/5/figure_4","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Top-view SEM image of 35 EBID SiO2 seed layers with an area of 500 × 500 nm2 and a thickness of ∼1 nm before ZnO ALD deposition\"},{\"panel_id\":\"b\",\"text\":\"Top-view SEM image of 35 EBID SiO2 seed layers with an area of 500 × 500 nm2 and a thickness of ∼1 nm after ZnO ALD deposition\"},{\"panel_id\":\"c\",\"text\":\"High magnification of image a - before ALD ZnO\"},{\"panel_id\":\"d\",\"text\":\"High magnification of image b - after ALD ZnO\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"35 (Can be calculated from counting the patterns in images a and c)\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"EBID-grown SiO2 and the c-Si native oxide behave differently because of a high concentration of carbon impurities (∼26 at. %) that was measured for the SiO2 deposited by EBID. Besides OH groups that will obviously be present on a SiO2 surface, it has been suggested that electron irradiation of the TEOS ligands can lead to the formation of Si−C and Si−CH3 and Si−H bonds. The presence of these surface groups can inhibit DEZ adsorption, which can explain the slight difference in thickness and\\nmorphology that were observed between the ZnO deposited on EBID SiO2 and native SiO2. In addition, the thinner SiO2 EBID patterns may also not form a completely closed film.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The selectivity of the an ALD process can be calculated using the thickness as measured by the SE and the coverage as imaged by the SEM in the figure shown. After 80 ALD cycles of ZnO at a deposition temperature of 100 °C, the selectivity was measured to be 0.96 by SE and 0.83 by SEM.\"}]}]","bbox":[{"panel_id":"c","x":288,"y":9,"width":271,"height":221},{"panel_id":"b","x":7,"y":240,"width":268,"height":254},{"panel_id":"a","x":5,"y":6,"width":275,"height":226},{"panel_id":"d","x":289,"y":240,"width":270,"height":261}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":561,"height":506,"image_format":"jpeg","image_sha256":"66ba9f113c5cbedc8874db7242a61c53aaa0e95aed54ff1bc987e34954506890","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_5_figure_5.jpg","caption":"Figure 5. (a) $\\mathrm{ZnO}$ nucleation curves on $\\mathrm{SiO}_2$ (closed symbols) and a- $\\mathrm{Si / H}$ (open symbols) as measured by in situ SE for two different temperatures: $100^{\\circ}\\mathrm{C}$ (square) and $250^{\\circ}\\mathrm{C}$ (circle). (b) Selectivity as a function of the number of ALD cycles, for deposition temperatures of $100^{\\circ}\\mathrm{C}$ (square) and $250^{\\circ}\\mathrm{C}$ (circles). The horizontal dotted line at $S = 1$ indicates perfect selectivity. Figure 7. Statistical density of $\\mathrm{ZnO}$ islands on the non-GA, after 80 $\\mathrm{ZnO}$ ALD cycles for different deposition temperatures. The insets show color-coded top-view SEM images of the NGA ( $500 \\times 500 \\mathrm{nm}^2$ ).","id":"train/atomic-layer-deposition/simulation-usecase/5/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/5/figure_5","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image panel shows four SEM images of ZnO islands at different deposition temperatures\"},{\"panel_id\":\"b\",\"text\":\"A line chart displaying the relationship between deposition temperature and the number of ZnO islands formed corresponding to the SEM images.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of ZnO islands | |\\n|---------------------|---|\\n| 150 | |\\n| 50 | |\\n| 20 | |\\n| 0 | |\"},{\"panel_id\":\"b\",\"text\":\"| Deposition temperature (°C) | Number of ZnO islands |\\n|-----------------------------|------------------------|\\n| 100 | 150 |\\n| 150 | 50 |\\n| 200 | 20 |\\n| 250 | 0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the same number of cycles, the density of ZnO islands is one order of magnitude larger at 100 °C, compared to the one at 250 °C. The higher density of nucleation at 100 °C seems consistent with undesired reactions with physisorbed precursor or coreactant molecules on the NGA. Because the rate of desorption of physisorbed species decreases with decreasing the deposition temperature, such physisorbed species may act as spurious nucleation sites and effectively decrease the selectivity of the process at low\\ndeposition temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. ALD of Al2O3 on graphene: lower deposition temperatures resulted in\\nhigher Al2O3 coverage on a chemically inert graphene substrate\\n2. Using self-assembled monolayers (SAM) as NGA and titanium as the GA, the selectivity for Al2O3 ALD is hampered by the physisorption of TMA on the SAM.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A statistical analysis of the density of ZnO islands was conducted on several 500 × 500 nm2 areas of the a-Si/H substrate in order to explain the decrease in selectivity for low deposition temperature\"}]}]","bbox":[{"panel_id":"b","x":69,"y":3,"width":599,"height":148},{"panel_id":"a","x":5,"y":148,"width":662,"height":309}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":669,"height":461,"image_format":"jpeg","image_sha256":"d32e18ca37d1218cbf64dfa5ad9bb51b3f2da4390a2d3e5487a058e6a84b665e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_5_figure_8.jpg","caption":"Figure 8. (a,b) Cross-sectional TEM images of a $\\mathrm{ZnO}$ thin film that was selectively deposited (using 80 ALD cycles at $250^{\\circ}\\mathrm{C}$ ) on a $\\sim 1 \\mathrm{nm}$ thick $\\mathrm{SiO}_2$ EBID pattern with a width of $\\sim 500 \\mathrm{nm}$ . Low-magnification images show a pristine NGA outside the patterned GA, indicating that no $\\mathrm{ZnO}$ deposition occurred on these surfaces. (c) High-magnification images showing the patterned GA and (d) region $250 \\mathrm{nm}$ away from the pattern, confirming the selectivity of the process. (e,f) EDX elemental mappings of the same pattern at two different magnifications also show the presence of $\\mathrm{ZnO}$ on the $\\mathrm{SiO}_2$ GA and the absence of $\\mathrm{ZnO}$ on the a $\\mathrm{Si / H}$ NGA.","id":"train/atomic-layer-deposition/simulation-usecase/5/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/5/figure_8","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"d","x":175,"y":249,"width":164,"height":111},{"panel_id":"b","x":2,"y":156,"width":338,"height":89},{"panel_id":"c","x":3,"y":249,"width":170,"height":112},{"panel_id":"e","x":346,"y":150,"width":208,"height":93},{"panel_id":"f","x":345,"y":251,"width":210,"height":108},{"panel_id":"a","x":3,"y":5,"width":554,"height":145}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":558,"height":361,"image_format":"jpeg","image_sha256":"029880dd2b48c4a32992fef26feabddfee3225896469db869f0b0b785dcf0c57","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_1.jpg","caption":"Figure 1. TEM images of $\\mathrm{SiO}_2$ and $\\mathrm{Si}_3\\mathrm{N}_4$ ALD thin films.","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_1","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":3,"width":518,"height":408}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":522,"height":414,"image_format":"jpeg","image_sha256":"34c216f5300c05dfb823d1367eb4e29b4a6d9410766f57dce4c959787f4fb2ed","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_11_figure_5.jpg","caption":"Figure 5. Low-magnification HAADF-STEM image of a $\\mathrm{ZnO}$ covered NW together with high-magnification images of the top, center, and bottom regions (a) before and (b) after ALE. (c) Averaged $\\mathrm{ZnO}$ thicknesses as measured every micrometer along the NWs before and after ALE. The standard deviation of the measurements is taken as the error. (d) High-magnification TEM image of the $\\mathrm{ZnO}$ layer after the ALE process. Lattice fringes are observable up to the top surface, indicating that no surface amorphization occurs during the ALE process.","id":"train/atomic-layer-etching/experimental-usecase/11/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/11/figure_5","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"multiple scatter plot"},{"panel_id":"d","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a comparison of a sample before ALE (Atomic Layer Etching) process using scanning electron microscopy (SEM) images at different magnifications.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows a comparison of a sample after ALE (Atomic Layer Etching) process using scanning electron microscopy (SEM) images at different magnifications.\"},{\"panel_id\":\"c\",\"text\":\"The line chart compares the averaged thickness of the sample at different distances from the top before and after ALE treatment.\"},{\"panel_id\":\"d\",\"text\":\"The figure shows a high-resolution transmission electron microscopy (TEM) image of the sample's surface after ALE treatment.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"| Distance from Top (µm) | Thickness Before ALE (nm) | Thickness After ALE (nm) |\\n|-------------------------|---------------------------|---------------------------|\\n| 1 | 60 | 45 |\\n| 2 | 60 | 45 |\\n| 3 | 60 | 45 |\\n| 4 | 60 | 45 |\\n| 5 | 60 | 45 |\\n| 6 | 60 | 45 |\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the high-resolution TEM image of the top ZnO layers after the ALE process, lattice fringes are visible up to the top surface layer, demonstrating that the ZnO surface retains its crystallinity upon ALE. This result indicates that no significant damage or amorphization occurs during the ALE process. The observed isotropic etch profile and the fact that the ZnO surface is not damaged or amorphized are in line with a negligible role of ions in the ALE mechanism, illustrating that the O2 plasma ALE half-reaction is predominantly driven by radicals\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film thickness reduction (15 ± 2 nm) is comparable at all regions of the NW from the STEM-measured thickness differences (before and after ALE). An averaged EPC of 1.3 ± 0.2 Å is obtained\\nacross the full length of the NW. This EPC value is in excellent agreement with the EPC measured by in situ SE (i.e., 1.31 Å/cycle). The result clearly demonstrates the accurate etch control and the isotropic nature of the ALE process.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, TEM images.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. 3D substrate consisting of a regular array of vertical NWs\\n2. NWs are conformally covered with a 60 ± 2 nm thick polycrystalline ZnO layer\\n3. NWs are then subjected to 120 cycles of the ALE process at 250 °C\\n4. NWs are 7 μm long\"}]}]","bbox":[{"panel_id":"c","x":23,"y":519,"width":274,"height":229},{"panel_id":"b","x":292,"y":47,"width":260,"height":447},{"panel_id":"a","x":0,"y":59,"width":282,"height":461},{"panel_id":"d","x":280,"y":511,"width":287,"height":254}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plasma.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":564,"height":770,"image_format":"jpeg","image_sha256":"71d2b731daadebbf9536fcaa2ba9d63e4a1a76a3a092a3d0313dd2ed0bf8c8e4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_22_figure_10.jpg","caption":"Figure 10. AFM height images of an exfoliated $\\mathrm{MoS}_2$ flake on a thermal Si oxide substrate. (a) Exfoliated flake prior to etching. (b) Exfoliated flake following 90 cycles of $\\mathrm{MoS}_2$ ALE at $200^{\\circ}\\mathrm{C}$ . (c) Exfoliated flake after an additional 90 cycles of $\\mathrm{MoS}_2$ ALE at $250^{\\circ}\\mathrm{C}$ . Initial etching at $200^{\\circ}\\mathrm{C}$ shows roughening of edge sites and removal of small regions across the surface. At $250^{\\circ}\\mathrm{C}$ , roughened edges are removed.","id":"train/atomic-layer-etching/experimental-usecase/22/figure_10","sample_id":"atomic-layer-etching/experimental-usecase/22/figure_10","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":11,"y":8,"width":327,"height":339},{"panel_id":"b","x":338,"y":6,"width":328,"height":340},{"panel_id":"c","x":663,"y":4,"width":410,"height":344}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/Thermal Atomic Layer Etching of MoS2 Using MoF6 and H2O.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1073,"height":347,"image_format":"jpeg","image_sha256":"66406ba56b0d76d1d61c989a02b5343093cefd45a8247746d1dcf51b60f32301","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_22_figure_8.jpg","caption":"Figure 8. TEM images of $\\mathrm{MoS}_2$ -coated CNT. (a) Prior to etching, the CNT displayed $\\sim 6 - 10$ layers of $\\mathrm{MoS}_2$ as depicted by the arrows. (b) After the first 60 cycles of etching, roughly $2\\mathrm{MoS}_2$ layers were removed. (c) Additional 60 etching cycles showed the removal of another 2 layers, leaving only 2-6 total $\\mathrm{MoS}_2$ layers on the CNT.","id":"train/atomic-layer-etching/experimental-usecase/22/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/22/figure_8","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":0,"width":470,"height":316},{"panel_id":"b","x":2,"y":323,"width":469,"height":311},{"panel_id":"c","x":5,"y":641,"width":467,"height":306}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/Thermal Atomic Layer Etching of MoS2 Using MoF6 and H2O.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":475,"height":947,"image_format":"jpeg","image_sha256":"33c53a9e234057d38066f44bbfab7700e3b774b912837d5e279621cb96325072","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_30_fig_3.jpg","caption":"Fig. 3. Cross-sectional TEM images of GaN processed with (a) ALE and (b) continuous plasma process.","id":"train/atomic-layer-etching/experimental-usecase/30/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/30/fig_3","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The TEM cross section shows the GaN surface after ALE, with the GaN layer above the AlGaN layer. The etched front appears relatively smooth, with small height variations marked near about 1.3 to 1.4 nm.\"},{\"panel_id\":\"b\",\"text\":\"The TEM cross section shows the GaN surface after a continuous plasma process, again above AlGaN. The etched front appears much rougher and more nonuniform, with larger height variations marked near about 6.8 to 18 nm.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In (a) the etched front is relatively smooth and the height variation is small. In (b) the etched front is much more jagged and the height variation is larger. This supports the paper’s point that ALE can reduce roughening compared with a continuous plasma process by separating surface modification and removal steps.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They indicate the material layers in the cross section, with GaN above AlGaN in both subfigures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ALE process in subfigure (a).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It can reduce plasma induced damage related to rough topography.\\n\\nIt improves interface and surface quality for subsequent device layers.\\n\\nIt helps maintain dimensional control in features such as recessed gates.\"}]}]","bbox":[{"panel_id":"b","x":2,"y":223,"width":663,"height":179},{"panel_id":"a","x":2,"y":2,"width":665,"height":179}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/Atomic layer etching of GaN and AlGaN.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":669,"height":408,"image_format":"jpeg","image_sha256":"a90c864c680d7de2a9c546c3e50b2dd5aedd495c042a537ffb911c04addb5009","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_30_fig_4.jpg","caption":"Fig. 4. (Color online) AFM images of AlGaN surface. (a) Initial, (b) $\\mathrm{Cl}_2$ ALE, and (c) $\\mathrm{BCl}_3 / \\mathrm{Cl}_2$ ALE.","id":"train/atomic-layer-etching/experimental-usecase/30/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/30/fig_4","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"AFM image of the initial AlGaN surface, with RMS roughness 0.4 nm over a 5 x 5 μm area.\"},{\"panel_id\":\"b\",\"text\":\"AFM image after Cl2 ALE, showing a rougher surface with RMS roughness 1.8 nm.\"},{\"panel_id\":\"c\",\"text\":\"AFM image after BCl3 and Cl2 ALE, showing a smoother surface with RMS roughness 0.3 nm.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Figure | Description |\\n| --- | --- |\\n| (a) | 5 x 5 µm image with RMS = 0.4 nm |\\n| (b) | Image with RMS = 1.8 nm |\\n| (c) | Image with RMS = 0.3 nm |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The initial surface in (a) has moderate roughness at 0.4 nm. After Cl2 ALE in (b) the roughness increases to 1.8 nm, indicating strong roughening. After BCl3 and Cl2 ALE in (c) the roughness decreases to 0.3 nm, indicating a smoother surface than the initial case.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"BCl3 and Cl2 ALE, shown in panel (c) with RMS roughness 0.3 nm.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is the RMS surface roughness of the AlGaN surface in nm for that scan area.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It can help maintain uniform electric fields in near surface device regions.\\n\\nIt can improve interface quality for later dielectric or metal deposition.\\n\\nIt can reduce variability in critical dimensions for patterned features.\"}]}]","bbox":[{"panel_id":"c","x":452,"y":6,"width":216,"height":212},{"panel_id":"b","x":229,"y":8,"width":214,"height":211},{"panel_id":"a","x":4,"y":3,"width":215,"height":212}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/Atomic layer etching of GaN and AlGaN.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":669,"height":220,"image_format":"jpeg","image_sha256":"272336ec2da19f90ade2bb3995a7948554750aaae7e7f2d93533ee3d80bbc828","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_34_fig10.jpg","caption":"FIG.10. Pore area analysis of the AAO substrate (a) intrinsic, (b) 100 cycles pALE, (c) 300 cycles pALE by ImageJ, and (d) comparison of pore diameter after pALE.","id":"train/atomic-layer-etching/experimental-usecase/34/fig10","sample_id":"atomic-layer-etching/experimental-usecase/34/fig10","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"show SEM micrographs of the intrinsic AAO, AAO after 100 pALE cycles, and AAO after 300 pALE cycles, respectively, with red overlays indicating the pore areas extracted using ImageJ.\"},{\"panel_id\":\"b\",\"text\":\"show SEM micrographs of the intrinsic AAO, AAO after 100 pALE cycles, and AAO after 300 pALE cycles, respectively, with red overlays indicating the pore areas extracted using ImageJ.\"},{\"panel_id\":\"c\",\"text\":\"show SEM micrographs of the intrinsic AAO, AAO after 100 pALE cycles, and AAO after 300 pALE cycles, respectively, with red overlays indicating the pore areas extracted using ImageJ.\"},{\"panel_id\":\"d\",\"text\":\"provides a bar chart comparison of the average pore diameters for the three conditions, showing relatively consistent pore sizes with slight variations after ALE cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"| Condition|Pore Diameter (nm)|Error Bar (approx.)|\\n|----------|------------------|-------------------|\\n|AAO|~200|±100|\\n|100 cycles|~220|±120|\\n|300 cycles|~270|±130|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Monitoring pore diameter evolution provides insight into etching uniformity, selectivity, and process control. By comparing intrinsic AAO with samples subjected to different pALE cycles, researchers can determine whether the etch rate is consistent and whether the process maintains pore integrity. The increase in pore diameter without significant distortion indicates a controlled etching environment, which is important for applications requiring precise nanostructure tuning, such as filtration membranes, sensing substrates, or templated nanofabrication.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The pore diameter increases from approximately 200 nm for intrinsic AAO to around 270 nm after 300 pALE cycles.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Slight widening of pore openings, Smoother pore-wall edges, More uniform pore boundaries, Increased average pore diameter with higher cycle numbers\"}]}]","bbox":[{"panel_id":"a","x":6,"y":19,"width":653,"height":240},{"panel_id":"b","x":8,"y":268,"width":650,"height":243},{"panel_id":"c","x":5,"y":521,"width":655,"height":240},{"panel_id":"d","x":5,"y":769,"width":655,"height":492}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/CF4 plasma-based atomic layer etching of Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":666,"height":1267,"image_format":"jpeg","image_sha256":"d5ad206834ae04dbe7faae172898b423809068d2c822c9bb840ab42a86f07039","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_34_fig_2.jpg","caption":"FIG. 2. TEM-EDS element mapping of $\\mathrm{CF_4}$ plasma-treated $\\mathrm{Al}_2\\mathrm{O}_3$ film at (a) 0.07 Torr-10 min and at (b) 2 Torr-5 min. Dotted line represents the original $\\mathrm{Al}_2\\mathrm{O}_3$ film surface.","id":"train/atomic-layer-etching/experimental-usecase/34/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/34/fig_2","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This panel presents a cross-sectional TEM image of the CF₄ plasma-treated Al₂O₃ film at 0.07 Torr for 10 minutes, accompanied by EDS elemental maps (Al, O, F, Si). The maps reveal partial etching and fluorine incorporation near the surface, while the dotted line marks the original Al₂O₃ thickness.\"},{\"panel_id\":\"b\",\"text\":\"This panel shows the same set of analyses for a higher-pressure CF₄ treatment (2 Torr for 5 minutes). The TEM image displays a significantly reduced etching depth, and the EDS maps indicate a more uniform elemental distribution with less fluorine penetration compared to the low-pressure condition.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Low-pressure CF₄ plasma produces deeper etching and stronger chemical modification of Al₂O₃, making it suitable for applications requiring high reactivity and material removal. In contrast, high-pressure plasma results in limited fluorine penetration and minimal etching, which is beneficial for gentle surface treatment. Thus, pressure acts as a key tuning parameter for precise etch-depth control\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.07 Torr for 10 minutes shows significantly deeper fluorine penetration.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Increased F incorporation at low pressure, Greater etching depth at low pressure, More uniform Al/O signal at high pressure, Clear surface modification identified by TEM contrast\"}]}]","bbox":[{"panel_id":"a","x":54,"y":1,"width":1341,"height":321},{"panel_id":"b","x":63,"y":324,"width":1333,"height":295}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/CF4 plasma-based atomic layer etching of Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1403,"height":622,"image_format":"jpeg","image_sha256":"20b0a394b4b5ec0138683178f2a51e299ea275d4e199fa640a821cdbe72969d2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_34_fig_9.jpg","caption":"FIG. 9. Surface images of the AAO substrate (a)–(c) intrinsic, (d)–(f) after 100 cycles pALE, and (g)–(i) after 300 cycles pALE.","id":"train/atomic-layer-etching/experimental-usecase/34/fig_9","sample_id":"atomic-layer-etching/experimental-usecase/34/fig_9","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"},{"panel_id":"g","label":"image panel"},{"panel_id":"h","label":"image panel"},{"panel_id":"i","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This panel shows a tilted SEM image of the pristine porous template at 0 ALD cycles, revealing a highly ordered, interconnected pore network with sharp edges and uniform feature size, serving as the reference morphology before film deposition.\"},{\"panel_id\":\"b\",\"text\":\"This top-view SEM image at higher magnification illustrates the open pore structure of the uncoated template, with well-defined pore openings and thin pore walls, indicating minimal surface roughness prior to ALD processing.\"},{\"panel_id\":\"c\",\"text\":\"This high-magnification SEM image highlights the local pore geometry of the uncoated structure, showing irregular pore interiors and sharp junctions that emphasize the complexity of the high-aspect-ratio surface to be coated.\"},{\"panel_id\":\"d\",\"text\":\"This tilted SEM image after 100 ALD cycles shows that the overall porous architecture is preserved while pore walls become visibly thicker, demonstrating conformal film growth without structural collapse.\"},{\"panel_id\":\"e\",\"text\":\"This top-view SEM image after 100 ALD cycles reveals a reduction in pore diameter and smoother pore edges, indicating uniform coating of the internal pore surfaces by the ALD film.\"},{\"panel_id\":\"f\",\"text\":\"This high-magnification image further confirms conformal deposition after 100 cycles, with increased wall thickness and rounded pore contours resulting from continuous ALD film growth.\"},{\"panel_id\":\"g\",\"text\":\"This tilted SEM image after 300 ALD cycles shows substantial thickening of the pore walls while maintaining the long-range order of the porous structure, highlighting the scalability of conformal growth with increasing cycle number.\"},{\"panel_id\":\"h\",\"text\":\"This top-view SEM image after 300 cycles demonstrates significant pore narrowing and enhanced uniformity, reflecting cumulative ALD film deposition on all exposed surfaces.\"},{\"panel_id\":\"i\",\"text\":\"This high-magnification SEM image illustrates near-cylindrical pores with smooth, thick walls after 300 cycles, confirming excellent thickness control and conformality even after extensive ALD processing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Description|\\n|------------|\\n|SEM image at 20k tilt, 0 cycles|\"},{\"panel_id\":\"b\",\"text\":\"| Description|\\n|------------|\\n|SEM image at 30k, 0 cycles|\"},{\"panel_id\":\"c\",\"text\":\"| Description|\\n|------------|\\n|SEM image at 50k, 0 cycles|\"},{\"panel_id\":\"d\",\"text\":\"| Description|\\n|------------|\\n|SEM image at 20k tilt, 100 cycles|\"},{\"panel_id\":\"e\",\"text\":\"| Description|\\n|------------|\\n|SEM image at 30k, 100 cycles|\"},{\"panel_id\":\"f\",\"text\":\"| Description|\\n|------------|\\n|SEM image at 50k, 100 cycles|\"},{\"panel_id\":\"g\",\"text\":\"| Description|\\n|------------|\\n|SEM image at 20k tilt, 300 cycles|\"},{\"panel_id\":\"h\",\"text\":\"| Description|\\n|------------|\\n|SEM image at 30k, 300 cycles|\"},{\"panel_id\":\"i\",\"text\":\"| Description|\\n|------------|\\n|SEM image at 50k, 300 cycles|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The controlled widening and smoothing of AAO pores after 100 and 300 pALE cycles demonstrate that the process enables highly selective material removal while preserving structural order. These improvements in pore uniformity, circularity, and surface smoothness make pALE-treated AAO substrates suitable for applications such as nanopatterning, filtration templates, and nanoscale device fabrication where precise geometry control is critical.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Compared to 0 cycles, the 100-cycle images show moderately enlarged and smoother pores, while the 300-cycle images exhibit significantly wider, more circular, and highly uniform pore structures.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Increased pore diameter, Rounded and smoother pore edges, Reduced surface irregularities, More consistent pore spacing and uniformity\"}]}]","bbox":[{"panel_id":"a","x":76,"y":45,"width":349,"height":254},{"panel_id":"b","x":76,"y":304,"width":347,"height":257},{"panel_id":"c","x":76,"y":568,"width":347,"height":256},{"panel_id":"d","x":434,"y":48,"width":342,"height":251},{"panel_id":"e","x":433,"y":306,"width":347,"height":251},{"panel_id":"f","x":434,"y":571,"width":344,"height":251},{"panel_id":"g","x":789,"y":45,"width":342,"height":253},{"panel_id":"h","x":788,"y":303,"width":344,"height":242},{"panel_id":"i","x":789,"y":570,"width":341,"height":249}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/CF4 plasma-based atomic layer etching of Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1136,"height":828,"image_format":"jpeg","image_sha256":"04b2b400989d9e306c4471dc3817efcd616bf6e9ab726e38d93cb7eb4223bcbb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_13.jpg","caption":"Fig. 13. TEM images of the trench pattern sample as $\\mathrm{TiO_2}$ was deposited: (a) perspective of the pattern, (b) enlargement of the top of the pattern, (c) middle of the pattern at a depth of $1400\\mathrm{nm}$ from the top, and (d) the bottom of the pattern. Images (e)–(j) are TEM images after eight cycles of the process. Images show samples after the cyclic process with $\\mathrm{O_2}$ plasma treatment for $30~\\mathrm{s}$ [(e)–(g)] and $60~\\mathrm{s}$ [(h)–(j)].","id":"train/atomic-layer-etching/experimental-usecase/36/fig_13","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_13","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"},{"panel_id":"g","label":"image panel"},{"panel_id":"h","label":"image panel"},{"panel_id":"i","label":"image panel"},{"panel_id":"j","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":3,"width":257,"height":823},{"panel_id":"b","x":295,"y":3,"width":361,"height":267},{"panel_id":"c","x":295,"y":279,"width":359,"height":271},{"panel_id":"d","x":295,"y":561,"width":361,"height":265},{"panel_id":"e","x":672,"y":8,"width":345,"height":252},{"panel_id":"f","x":672,"y":283,"width":345,"height":258},{"panel_id":"g","x":670,"y":566,"width":345,"height":259},{"panel_id":"h","x":1033,"y":1,"width":345,"height":256},{"panel_id":"i","x":1033,"y":286,"width":338,"height":254},{"panel_id":"j","x":1042,"y":568,"width":333,"height":249}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1383,"height":828,"image_format":"jpeg","image_sha256":"c92ccce87442d38af8309be96aed0a6b0f512ac0f20515b8af7b39d4f0938dc6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_2.jpg","caption":"Fig. 2. Cross-sectional TEM images: (a) as deposited and (b) after $\\mathrm{CF_4}$ plasma treatment for $30~\\mathrm{s}$ .","id":"train/atomic-layer-etching/experimental-usecase/36/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_2","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":13,"width":496,"height":670},{"panel_id":"b","x":530,"y":10,"width":376,"height":679}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":908,"height":686,"image_format":"jpeg","image_sha256":"93fcc7267cc34391d83e4dee4bf28ac714ba1c8b9429ec51522223c080fe3629","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_6.jpg","caption":"Fig. 6. TEM images: (a) as $\\mathrm{TiO_2}$ deposited, (b) after $\\mathrm{C_4F_8}$ plasma treatment, and (c) after $\\mathrm{O_2}$ plasma treatment.","id":"train/atomic-layer-etching/experimental-usecase/36/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_6","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":1,"width":414,"height":269},{"panel_id":"b","x":418,"y":8,"width":437,"height":260},{"panel_id":"c","x":860,"y":4,"width":346,"height":264}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1214,"height":272,"image_format":"jpeg","image_sha256":"dd0d49c279f7529112c126a5eb4682cfe8b535aed2c0ddd92f51e5964640cc9a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_7.jpg","caption":"Fig. 7. TEM images of $\\mathrm{TiO_2}$ film after $\\mathrm{C_4F_8}$ plasma treatment for (a) $30~\\mathrm{s}$ and (b) $60~\\mathrm{s}$ .","id":"train/atomic-layer-etching/experimental-usecase/36/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_7","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":7,"width":383,"height":397},{"panel_id":"b","x":389,"y":7,"width":513,"height":396}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":905,"height":405,"image_format":"jpeg","image_sha256":"30ec45744cd3eec889abea7a9e7fdb7107e166a309cdbb38a4c6e363bbb90732","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_4_fig_4.jpg","caption":"FIG. 4. AFM micrograph of a photolithographically patterned ITO grating using ALE. The ITO grating has $1\\mu \\mathrm{m}$ lines with $3\\mu \\mathrm{m}$ period. Conventional photoresist was used as an etch mask. The etched areas are visibly smoother than unetched areas. 100 cycles using $20\\mathrm{W}$ RF power was used. (a) shows the 3D view and (b) shows the conventional 2D AFM measurement of the same region. The scan area was $10\\times 10\\mu \\mathrm{m}$","id":"train/atomic-layer-etching/experimental-usecase/4/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/4/fig_4","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":30,"width":670,"height":263},{"panel_id":"b","x":7,"y":359,"width":632,"height":454}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/Atomic layer etching of indium tin oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":678,"height":817,"image_format":"jpeg","image_sha256":"9e39757d836e4002d65b7fdf84e3193c37307b9b454a1603e615508f355b61f3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_43_fig_4.jpg","caption":"Fig. 4. Cross-section TEM image of ALD $\\mathrm{Al_2O_3}$ film on a trench pattern: (a) as-deposited and (b) after 30 ALE cycles at $250^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/43/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/43/fig_4","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":536,"height":508},{"panel_id":"b","x":573,"y":0,"width":532,"height":508}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/Surface reaction during thermal atomic layer etching of aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":1105,"height":508,"image_format":"jpeg","image_sha256":"2b4215d7c918936bdf52963057f52f134ea8f67d570f63f524a653a27268373d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_9_figure_2.jpg","caption":"Figure 2. (a) Scanning electron microscopy (SEM) images of InGaAs/InAlAs vertical nanowires (VNWs) after $\\mathrm{BCl}_3 / \\mathrm{SiCl}_4 / \\mathrm{Ar}$ RIE and after 300 and 600 cycles of HF/DMAC thermal ALE at $250^{\\circ}C$ b) SEM images of InGaAs/InAlAs VNWs before and after 250 cycles of HF/DMAC thermal ALE at a higher reaction temperature of $300^{\\circ}C$ . VNWs after 500 cycles were not shown because the InAlAs in the VNWs was completely etched. (c) XRR measurement of a planar InGaAs film after $300^{\\circ}C$ HF/DMAC thermal ALE, confirming the higher etch rate of $\\sim 0.18\\mathrm{\\AA}/$ cycle. (d) Summary of changes in VNW radius versus number of cycles for InGaAs and InAlAs VNWs at 250 and $300^{\\circ}C$","id":"train/atomic-layer-etching/experimental-usecase/9/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/9/figure_2","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image panel consists of series of ccanning electron microscopy (SEM) images of InGaAs/InAlAs vertical nanowires (VNWs) during different stages of HF/DMAC ALE process at 250 °C\"},{\"panel_id\":\"b\",\"text\":\"The image panel consists of series of ccanning electron microscopy (SEM) image at different ALE stages at 300 °C\"},{\"panel_id\":\"c\",\"text\":\"The line chart shows the change in X-ray reflectivity intensity with respect to omega-2θ (arcsec) for different cycles of ALE.\"},{\"panel_id\":\"d\",\"text\":\"The line chart illustrates the change in radius (ΔRadius) over the number of ALE cycles for InAlAs and InGaAs at different temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Condition | InGaAs Thickness | InAlAs Thickness |\\n|-----------------|-------------------|-------------------|\\n| After RIE | 28 nm | 28nm |\\n| 300 cycles | 24 nm | 18 nm |\\n| 600 cycles | 24 nm | 10 nm |\"},{\"panel_id\":\"b\",\"text\":\"| Condition | InGaAs Thickness | InAlAs Thickness |\\n|-----------------|-------------------|-------------------|\\n| After RIE | 35 nm | 35 nm |\\n| 250 cycles | 24 nm | 4 nm |\"},{\"panel_id\":\"c\",\"text\":\"| Cycles | Density edge intensity |\\n|-----------|--------------------|\\n| Pristine |10^9 |\\n| 200 |10^7 |\\n| 450 |10^5 |\"},{\"panel_id\":\"d\",\"text\":\"| Material | Temperature | Growth Rate (Å/cycle) |\\n|-----------|------------|-------------------------|\\n| InAlAs | 300°C | 0.62 |\\n| InGaAs | 300°C | — |\\n| InAlAs | 250°C | — |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The partial etching selectivity between InGaAs and InAlAs might occur because fluorination of AlAs (Gibbs free energy ΔG° = −86.0 kcal/mol) is thermochemically more favorable than the fluorination of GaAs (ΔG° = −17.4 kcal/mol) at 250 °C. This behavior is also consistent with the faster oxidation of InAlAs versus InGaAs at 300−500 °C.Fluorination/oxidation of InAlAs is probably more favorable than for InGaAs because Al−F/Al-O bonds are stronger than Ga−F/Ga-O bonds.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The radial etch rates of InGaAs and InAlAs VNWs at 300 °C are as follows. \\n1. After the first 250 cycles, InGaAs is 0.24 and InAlAs is 0.62 Å/cycle on average. \\n2. After the second 250 cycles, InGaAs is 0.10 and InAlAs decreases to 0.41 Å/cycle on average.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The negligible etching of InGaAs after 300 cycles of thermal ALE at 250 °C may be caused by the low temperature of 250 °C.\"}]}]","bbox":[{"panel_id":"c","x":-3,"y":358,"width":442,"height":375},{"panel_id":"b","x":461,"y":11,"width":375,"height":320},{"panel_id":"a","x":11,"y":6,"width":459,"height":354},{"panel_id":"d","x":432,"y":360,"width":411,"height":368}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/In Situ Thermal Atomic Layer Etching for Sub5 nm InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":847,"height":775,"image_format":"jpeg","image_sha256":"d1188a21a822a1865fe9be05cc48bdf89d8f70a6e31c9f944c3afbeb16695b6c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_9_figure_3.jpg","caption":"Figure 3. SEM side-view images of InGaAs/InAlAs fins after (a) fin RIE and after subsequent thermal ALE with HF/DMAC under various conditions: (b) $P_{\\mathrm{DMAC}} = 40 \\mathrm{mTorr}$ for 250 and 600 cycles at $250^{\\circ}\\mathrm{C}$ , (c) $P_{\\mathrm{DMAC}} = 150 \\mathrm{mTorr}$ for 500 cycles at $250^{\\circ}\\mathrm{C}$ , and (d) $P_{\\mathrm{DMAC}} = 40 \\mathrm{mTorr}$ for 250 and 500 cycles at $300^{\\circ}\\mathrm{C}$ . (e,f) AFM measurement of RMS surface roughness and topography of a planar InGaAs surface after sequential thermal ALE (HF/DMAC, $P_{\\mathrm{DMAC}} = 40 \\mathrm{mTorr}$ , $300^{\\circ}\\mathrm{C}$ ). In all cases, the InGaAs wafer was etched by $\\mathrm{BCl}_3 / \\mathrm{SiCl}_4 / \\mathrm{Ar}$ RIE prior to the thermal ALE treatment.","id":"train/atomic-layer-etching/experimental-usecase/9/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/9/figure_3","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"line chart"},{"panel_id":"f","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image panel shows the surface morphology of InGaAs after RIE before ALE\"},{\"panel_id\":\"b\",\"text\":\"The image panel shows the surface morphology of InGaAs after 250 and 600 cycles of ALE at 40m Torr and 250 °C\"},{\"panel_id\":\"c\",\"text\":\"The image panel shows the surface morphology of InGaAs after 500 cycles of ALE at 140m Torr and 250 °C\"},{\"panel_id\":\"d\",\"text\":\"The image panel shows the surface morphology of InGaAs after 250 and 600 cycles of ALE at 40m Torr and 300 °C\"},{\"panel_id\":\"e\",\"text\":\"The line chart illustrates the change in RMS surface roughness of etched InGaAs surface with increasing number of cycles under HF/DMAC at 40 mT and 300°C.\"},{\"panel_id\":\"f\",\"text\":\"The image panel includes three AFM images showing the surface topography of InGaAs after RIE and after different cycles of thermal ALE at 40 mT and 300°C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"| Number of Cycles | RMS Surface Roughness (nm) |\\n|-----------------|--------------------------|\\n| 0 | 0.5 |\\n| 150 | 0.5 |\\n| 200 | 0.48 |\\n| 250 | 0.7 |\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thermal ALE can preserve or possibly improve sidewall quality even after hundreds of cycles. The improvement in fin sidewall roughness, in particular, can have a significant impact on FinFET performance as the AFM image shows that the surface topography is preserved after 150 and 200 cycles.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At lower DMAC pressure and lower temperature, the fin sidewalls become rougher after 250 and 600 cycles (b). In the cases of (c) or (d), with a higher pressure DMAC or higher temperature, the quality of the sidewall and planar surfaces significantly improves. Overall, process (image d) with the higher\\ntemperature of 300 °C for 250 cycles produces the smoothest fin sidewall and planar surfaces.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The slight increase of Rrms after 250 thermal ALE cycles may occur because InGaAs and InAlAs are ternary materials. When they are etched, the surface can suffer from preferential etching of one metal over the other. XPS analysis confirmed that the In/Ga ratio decreased from 1.0 to 0.8−0.9 after 600 thermal ALE cycles at 250−300 °C as expected from the preferential etching of InAs compared with GaAs. There was also increased Al content perhaps resulting from partial conversion of InGaAs/InAlAs to AlAs during the DMAC reaction.\"}]}]","bbox":[{"panel_id":"d","x":715,"y":2,"width":392,"height":264},{"panel_id":"b","x":181,"y":2,"width":347,"height":272},{"panel_id":"c","x":530,"y":0,"width":186,"height":281},{"panel_id":"e","x":7,"y":306,"width":340,"height":299},{"panel_id":"f","x":340,"y":302,"width":758,"height":292},{"panel_id":"a","x":9,"y":6,"width":168,"height":268}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/In Situ Thermal Atomic Layer Etching for Sub5 nm InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1106,"height":639,"image_format":"jpeg","image_sha256":"9db4debd535cc6f1a25e26c4c246f1dd3fee63db03773418057401e913ef9c72","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_17_fig_2.jpg","caption":"Fig. 2. (a) Twelve substrate regions for microscopic simulations. (b) Twelve substrate positions for the investigation of the flow distribution.","id":"train/atomic-layer-etching/simulation-usecase/17/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/17/fig_2","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":9,"width":356,"height":351},{"panel_id":"b","x":483,"y":0,"width":120,"height":360}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/Multiscale computational fluid dynamics modeling of thermal atomic layer etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":603,"height":411,"image_format":"jpeg","image_sha256":"c4aad4cd56b3cd9195484873f7bd9bc2b6baeb59cbf33a8a26d5e4716fdc69e4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_23_fig_8.jpg","caption":"FIG. 8. TEM cross sections of a $4 \\times 50 \\mathrm{nm}$ InGaAs nanowire covered by $4.7 \\mathrm{nm}$ ALD-grown $\\mathrm{Al}_2\\mathrm{O}_3$ and $20 \\mathrm{nm}$ of ALD tungsten. Reprinted with permission from Lu et al., in International Electron Devices Meeting, San Francisco, 1-5 December 2018 (IEDM, Montgomery Village, 2018), p. 895. Copyright 2018, IEEE.","id":"train/atomic-layer-etching/simulation-usecase/23/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/23/fig_8","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":414,"y":5,"width":250,"height":400},{"panel_id":"a","x":6,"y":4,"width":406,"height":398}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/Review Paper -- Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":667,"height":406,"image_format":"jpeg","image_sha256":"30663a1ececfacb558c60061d01e2c009ff6a13d27ca7a63ac8ee9641ad01f2e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_15.jpg","caption":"FIG. 15. (Color online) Profiles resulting from etching the gate structure with a (a)–(c) continuous etching process, and (d)–(f) the optimized ALE process. Time increases from left to right. Frames are taken at equal over-etch (as a percentage of the time required to expose the bottom $\\mathrm{SiO}_2$ ), not at equal etch times. The etch times listed for the ALE process (d)–(f) are active (plasma on) times, and ignore any purge or dwell times necessary for a functional ALE process.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_15","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_15","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"d","x":0,"y":503,"width":516,"height":497},{"panel_id":"b","x":497,"y":61,"width":474,"height":411},{"panel_id":"c","x":957,"y":66,"width":455,"height":413},{"panel_id":"e","x":511,"y":511,"width":457,"height":482},{"panel_id":"f","x":975,"y":515,"width":439,"height":478},{"panel_id":"a","x":5,"y":55,"width":510,"height":447}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1422,"height":1000,"image_format":"jpeg","image_sha256":"93831789b5acba8f13bba6e4a117976473f1870a9bafcddddd9087e8a9e45861","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_32_fig_3.jpg","caption":"FIG. 3. (a) The perspective view of Connolly surface constructed on $\\mathrm{BCl}_3$ adsorbed $\\mathrm{Al}_2\\mathrm{O}_3(100)$ using a probe atom with a radius of $2.77\\mathrm{\\AA}$ ; (b) The time-resolved variations of $\\mathrm{Al}_2\\mathrm{O}$ molar ratio in $\\mathrm{Al}_2\\mathrm{O}_3(100)$ surface during the Ar bombardment (XPS measurements); (c) Atomic ASAs obtained from the above Connolly surface (unit: $\\mathring{\\mathrm{a}}^2$ ). The oxygen, aluminium, boron, and chlorine atoms are shown in red, violet, bronze, and green, respectively.","id":"train/atomic-layer-etching/simulation-usecase/32/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/32/fig_3","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Perspective rendering of the Connolly surface for a BCl3 adsorbed Al2O3(100) model, constructed using a probe radius of 2.77 Å (Ar van der Waals radius).\"},{\"panel_id\":\"b\",\"text\":\"XPS based Al to O molar ratio versus Ar irradiation time, showing an initial decrease followed by recovery as irradiation continues.\"},{\"panel_id\":\"c\",\"text\":\"Atomic accessible surface areas (ASA) computed from the Connolly surface, with Cl atoms showing the largest ASAs (tens of Å^2 per atom) compared with other surface atoms.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Ar Irradiation Time (sec) | A/O Molar Ratio |\\n|---|---|\\n| Ref. | 0.55 |\\n| 75 | 0.45 |\\n| 100 | 0.48 |\\n| 125 | 0.55 |\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A Connolly surface for the BCl3 adsorbed Al2O3(100) structure, generated using a 2.77 Å probe radius.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The chlorine atoms have the largest accessible surface areas, roughly 25 to 50 Å^2 per Cl atom.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The very large ASAs on Cl indicate that Cl dominates the outermost accessible surface, so Ar is most likely to strike Cl first. Because Cl is directly bonded to surface Al in the adsorption structure, these impacts can transfer energy efficiently into Al containing units, supporting the idea that Al associated moieties detach early.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Al to O ratio drops at the early stage (around 75 s) and then increases again at longer irradiation times (100 to 125 s), moving back toward the reference value.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":1,"width":314,"height":340},{"panel_id":"b","x":316,"y":1,"width":348,"height":345},{"panel_id":"c","x":32,"y":348,"width":626,"height":457}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/Understanding time-resolved processes in atomic-layer etching of ultra-thin Al2O3 film.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":667,"height":811,"image_format":"jpeg","image_sha256":"d561210cf3896c1b4b9705b96b527201deeda52d6f6ec67d70b55ce80e50104f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_4_figure_6.jpg","caption":"Figure 6. BF-TEM images of a) the reference unetched $25 \\text{nm}$ TiN film on $22 \\text{nm} \\text{SiO}_2$ film, b) after complete etching of $25 \\text{nm}$ TiN film by 600 cycles of each $3 \\text{s}$ long $\\text{CCl}_4$ pulse separated by $6 \\text{s}$ of $\\text{N}_2$ purges.","id":"train/atomic-layer-etching/simulation-usecase/4/figure_6","sample_id":"atomic-layer-etching/simulation-usecase/4/figure_6","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"BF-TEM image of the reference unetched TiN/SiO₂ system, showing a 25 nm TiN film on 22 nm SiO₂. Spin-on carbon was used to enhance material contrast.\"},{\"panel_id\":\"b\",\"text\":\"BF-TEM image of the same sample after 600 cycles of 3 s CCl₄ pulses with 6 s N₂ purges, showing complete removal of the TiN film and a clean SiO₂ surface without residues.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Description |\\n|---|\\n| Reference unetched 25 nm TiN film on 22 nm SiO₂. Shows the original TiN layer for comparison. |\"},{\"panel_id\":\"b\",\"text\":\"| Description |\\n|---|\\n| TiN film completely removed after 600 cycles of 3 s CCl₄ pulses with 6 s N₂ purges. The SiO₂ surface appears clean and free of residues. |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"25 nm.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Before etching, the SiO₂ substrate is covered by a 25 nm TiN film, which is clearly visible in panel (a). After etching (panel b), the TiN film is completely removed, leaving the SiO₂ surface clean and smooth, with no visible residues from either the TiN layer or the etch process. The spin-on carbon used during TEM imaging highlights the material contrast but does not affect the interpretation of the substrate’s condition.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Provides high-resolution cross-sectional visualization of thin films, Confirms complete removal of the TiN layer, Allows assessment of the substrate’s surface integrity post-etch, Highlights any residual contamination or defects from the etch process\"}]}]","bbox":[{"panel_id":"a","x":4,"y":3,"width":247,"height":572},{"panel_id":"b","x":255,"y":2,"width":387,"height":578}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/Combining Experimental and DFT Investigation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":653,"height":583,"image_format":"jpeg","image_sha256":"a5c390c29ef6ef70190e9c91ba824e5797cc8c5e43cd0b2ba84169ab986b2cc9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_4_figure_8.jpg","caption":"Figure 8. Cross-sectional bright field transmission electron micrograph (BF-TEM) of 3D structures: a) about $3.3 \\text{nm}$ TiN film deposited on $\\text{SiO}_2$ fins with lateral cavities, b) the same after about $0.8 \\text{nm}$ TiN is etched by the $\\text{NbF}_5\\text{-}\\text{CCl}_4$ etch-process, and c) after removing the TiN film completely. The etching was performed at $460^{\\circ}\\text{C}$ .","id":"train/atomic-layer-etching/simulation-usecase/4/figure_8","sample_id":"atomic-layer-etching/simulation-usecase/4/figure_8","subset":"image-panel","split":"train","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"BF-TEM cross-section of pristine SiO₂ fin structures coated with a ~3.3 nm TiN layer, showing high conformality.\"},{\"panel_id\":\"b\",\"text\":\"BF-TEM cross-section after partial etching (~0.8 nm) of the TiN layer using NbF₅–CCl₄ at 460 °C, showing minimal surface defects.\"},{\"panel_id\":\"c\",\"text\":\"BF-TEM cross-section after complete removal of the TiN film, showing intact SiO₂ fins and confirming etch selectivity.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Description|\\n|-----------|\\n| TEM image of SiO₂ fin structure coated with ~3.3 nm pristine TiN film, showing high conformality. |\"},{\"panel_id\":\"b\",\"text\":\"|Description|\\n|-----------|\\n| TEM image after ~0.8 nm TiN conformally etched by the NbF₅–CCl₄ process, with no significant surface defects. |\"},{\"panel_id\":\"c\",\"text\":\"|Description|\\n|-----------|\\n| TEM image after complete removal of the TiN film (over‑etch), with SiO₂ fins remaining intact, confirming etch selectivity. |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No significant increase in surface defects was observed after ~0.8 nm TiN removal.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Selective removal of TiN\\nPreservation of SiO₂ fins\\nHigh conformality maintained\\nPotential for advanced 3D nanostructure processing\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The conformality of TiN films plays a critical role in the effectiveness of gas‑phase etching. Because the TiN layer uniformly coats even non‑line‑of‑sight features, the NbF₅–CCl₄ etch process can remove material consistently across complex geometries. This structural property enhances isotropic etching and ensures selectivity, making conformal TiN deposition essential for reliable thinning and removal.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":7,"width":454,"height":447},{"panel_id":"b","x":463,"y":5,"width":451,"height":454},{"panel_id":"c","x":923,"y":7,"width":451,"height":447}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/Combining Experimental and DFT Investigation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:img_caption"},"width":1375,"height":461,"image_format":"jpeg","image_sha256":"15f30b9b7fead45f5369e70682a9591f2c13c81b4e87853a35b78f5f299740df","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/image-panel/validation/metadata.jsonl b/subsets/image-panel/validation/metadata.jsonl index dc84e63e2854c3ffd827055861439835a963f8f3..dc990e5b7b1232a75335d0fc9674dad03766d5cf 100644 --- a/subsets/image-panel/validation/metadata.jsonl +++ b/subsets/image-panel/validation/metadata.jsonl @@ -1,18 +1,18 @@ -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_11_fig1.jpg","caption":"Fig.1. TiN film on native silicon oxide.","id":"validation/atomic-layer-deposition/experimental-usecase/11/fig1","sample_id":"atomic-layer-deposition/experimental-usecase/11/fig1","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/K.-E. Elers et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":647,"height":241,"image_format":"jpeg","image_sha256":"4e72412971d99d5e720deed25cf0835032f6c9b25ff35b261ac1fe2a1320f153","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":647,"height":241}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A cross-sectional TEM image of an ALD-grown TiN film on native silicon oxide (scale bar 20 nm). The film shows dense, vertically oriented columnar grains with continuous grain boundaries running through the film thickness; the TiN/SiO₂ interface is sharp, indicating good adhesion and conformal ALD growth.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The columnar grain structure indicates strong vertical grain boundaries, which can serve as fast diffusion pathways for copper, potentially compromising barrier performance. However, the dense film and sharp interface suggest good growth uniformity and adhesion, making TiN an attractive barrier candidate when complemented by techniques such as nanolaminates to disrupt grain boundary continuity. These structural insights directly inform how TiN behaves under thermal and chemical stress during device fabrication.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The grain interiors appear brighter and more uniform, while the grain boundaries appear as darker vertical lines extending through the film thickness.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Continuous columnar grain boundaries, Dense polycrystalline structure, Sharp TiN/SiO₂ interface, Full-thickness grain alignment\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_11_fig_4.jpg","caption":"Fig. 4. Marked copper pitting when $\\mathbf{W}_{x}\\mathbf{N}$ film is deposited on copper (a). No copper pitting when $\\mathrm{WN}_x\\mathrm{C}_y$ film is deposited on copper (b).","id":"validation/atomic-layer-deposition/experimental-usecase/11/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/11/fig_4","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/K.-E. Elers et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":659,"height":933,"image_format":"jpeg","image_sha256":"c5762296ace71c31905eaed3e6f19e930dc52d3989a29db329fa6fb6a2f7aa44","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":659,"height":474},{"panel_id":"b","x":8,"y":502,"width":651,"height":431}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows severe copper pitting when WₓN is deposited, evidenced by large dark voids and etched regions.\"},{\"panel_id\":\"b\",\"text\":\"shows a smooth, intact copper surface when WNₓCᵧ is deposited, demonstrating that adding triethylboron prevents corrosive by-product attack and eliminates copper pitting.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The absence of copper pitting indicates that WNₓCᵧ films prevent corrosive by-products, such as HF and HCl, from forming during deposition. This chemical stability is essential in semiconductor applications because surface damage severely compromises barrier integrity, adhesion, and overall device reliability. WNₓCᵧ’s compatibility with copper therefore makes it a superior candidate for diffusion barrier layers in advanced interconnect structures.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Panel (a) shows deep pits and surface damage, while panel (b) shows a smooth, uniform copper surface with no visible pitting.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Presence of pits and voids in WₓN deposition, Smooth, intact copper surface after WNₓCᵧ deposition, Absence of corrosive by-product attack in panel (b), Clear contrast between damaged and undamaged regions\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_11_fig_5.jpg","caption":"Fig. 5. Left figure depicts copper after TiN deposition; marked pitting can be observed (a). Right figure depicts a copper surface where TiN film is deposited on top of 50 cycles $\\mathrm{WN_xC_y}$ film (b).","id":"validation/atomic-layer-deposition/experimental-usecase/11/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/11/fig_5","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/K.-E. Elers et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":650,"height":905,"image_format":"jpeg","image_sha256":"e066ed024d54efea2c57ebbb1dde6003be21ab408522b8587a78de2ad85150b6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":650,"height":440},{"panel_id":"b","x":0,"y":469,"width":650,"height":436}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows severe copper pitting when TiN is deposited directly on copper, visible as numerous dark etched regions.\"},{\"panel_id\":\"b\",\"text\":\"shows a smooth, pit-free copper surface when a thin WNₓCᵧ layer (~50 cycles) is inserted before TiN deposition, demonstrating that the interlayer prevents corrosive by-product attack.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Preventing copper pitting is essential because surface defects compromise adhesion, increase electrical resistance, and reduce long-term reliability of interconnect structures. The WNₓCᵧ interlayer acts as a chemical buffer that blocks corrosive by-products generated during TiN ALD, preserving copper surface integrity. This enables TiN to be used in multilayer barrier stacks without damaging underlying copper, improving overall device performance and stability.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Direct TiN deposition produces heavy pitting and surface damage, while TiN deposited over WNₓCᵧ results in a smooth, pit-free copper surface.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, adding the WNₓCᵧ interlayer prevents copper pitting that otherwise occurs during direct TiN deposition.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Absence of pits or voids, Smooth and continuous surface, Lack of corrosive attack patterns, Reduced by-product interaction with copper\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_11_fig_6.jpg","caption":"Fig. 6. Nanolaminate film stack of (TiN $(10\\mathrm{nm}) / 8\\times (\\mathrm{W_xN}(2\\mathrm{nm}) + \\mathrm{TiN}(2\\mathrm{nm})) / \\mathrm{TiN}(10\\mathrm{nm}))$ .","id":"validation/atomic-layer-deposition/experimental-usecase/11/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/11/fig_6","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/K.-E. Elers et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":830,"height":341,"image_format":"jpeg","image_sha256":"d804103abc77167606542d1b9c8a360f876ee1f908abe377c9b59914afd6ccb0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":830,"height":341}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"the TEM image displays a nanolaminate consisting of TiN (10 nm) at the top and bottom, with eight repeated bilayers of WₓN (2 nm) and TiN (2 nm) in between. The alternating layers appear as clear, periodic dark–bright bands, demonstrating precise ALD thickness control and well-defined interfaces. The structure effectively interrupts continuous grain boundaries, improving its function as a diffusion barrier.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The alternating TiN and WₓN layers create a tortuous diffusion path that significantly hinders the movement of impurities such as copper. By breaking continuous grain boundaries, the nanolaminate structure prevents fast diffusion channels and enhances thermal and chemical stability. This precise ALD-engineered layering provides superior barrier reliability compared to single-layer nitride films, making it suitable for advanced interconnect technologies.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TiN layers appear brighter, while the WₓN layers appear darker, forming a consistent repeating pattern that confirms uniform bilayer thickness across the structure.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the ALD process clearly forms well-defined alternating TiN and WₓN layers, visible as distinct contrast bands in the TEM image.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Multiple well-defined interfaces, Alternating high-contrast layers, Disruption of continuous grain boundaries, Uniform nanometer-scale layer thickness\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_11_fig_7.jpg","caption":"Fig. 7. Nanolaminate film stack of $(9\\times (\\mathrm{WN_xC_y}(2\\mathrm{nm}) + \\mathrm{TiN}(2\\mathrm{nm})))$ .","id":"validation/atomic-layer-deposition/experimental-usecase/11/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/11/fig_7","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/K.-E. Elers et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":664,"height":536,"image_format":"jpeg","image_sha256":"236cd6a16bbdb8efcb7d6ef0dc7806a7690c1c93ef28d3c8367c0f4677a5c30f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":664,"height":536}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The TEM micrograph displays a nanolaminate structure formed by nine repeated bilayers of WNₓCᵧ (2 nm) and TiN (2 nm). The alternating dark and light bands indicate well-defined, nanometer-scale layering with uniform thickness. This periodic structure confirms precise ALD control and highlights the multilayer design intended to disrupt continuous grain boundaries and enhance diffusion barrier performance.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The alternating WNₓCᵧ and TiN layers create a highly segmented microstructure that prevents continuous grain boundaries from forming. This forces diffusing species such as copper to follow a much longer, more tortuous path, significantly reducing the likelihood of penetration through the barrier. The well-controlled, nanoscale periodicity provided by ALD ensures predictable performance, making the structure ideal for high-reliability interconnect applications.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The WNₓCᵧ layers appear darker while the TiN layers appear brighter, forming a periodic pattern that repeats uniformly throughout the film.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the TEM image clearly shows alternating contrast bands consistent with sequential WNₓCᵧ and TiN layering.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Multiple nanoscale interfaces, Uniform 2 nm periodicity, Alternating composition layers, Interrupted grain boundary pathways\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig2.jpg","caption":"FIG.2. Cross-sectional FE-SEM image of as-deposited $\\mathrm{Ga}_2\\mathrm{O}_3$ thin film on patterned $\\mathrm{SiO}_2 / \\mathrm{Si}$ substrate deposited at $200^{\\circ}\\mathrm{C}$ using PEALD.","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig2","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig2","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":469,"height":369,"image_format":"jpeg","image_sha256":"27b83a5525700d0beb093cd23a1041a75d7aedd9e48d502ef453c86498bc02f7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":6,"width":464,"height":360}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_46_fig_3.jpg","caption":"FIG. 3. Bright field TEM micrographs of $\\mathrm{Pd / 9nm}$ (nominal) ALD $\\mathrm{HfO_2 / InGaAs / InP}$ MOS devices for (a) in situ $50^{\\circ}\\mathrm{C}$ $\\mathrm{H}_2\\mathrm{S}$ passivated InGaAs and (b) unpassivated InGaAs. The actual $\\mathrm{HfO_2}$ layer [and interfacial layer (IL)] thicknesses measured by TEM were $5.2 \\mathrm{nm}$ (1.9 nm IL) unpassivated device, $9.4 \\mathrm{nm}$ (0.8 nm IL) $50^{\\circ}\\mathrm{C}$ device, $13.5 \\mathrm{nm}$ (0.9 nm IL) $200^{\\circ}\\mathrm{C}$ device, $10.8 \\mathrm{nm}$ (0.9 nm IL) $350^{\\circ}\\mathrm{C}$ device, and $11 \\mathrm{nm}$ (1.3 nm IL) $(\\mathrm{NH_4})_2\\mathrm{S}$ passivated device.","id":"validation/atomic-layer-deposition/experimental-usecase/46/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/46/fig_3","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/OaConnor et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":456,"height":494,"image_format":"jpeg","image_sha256":"806d98f31645f1289c8b2a07599839a34c35d1a2796a7b2111969930f17523f9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":4,"y":259,"width":449,"height":234},{"panel_id":"a","x":2,"y":0,"width":454,"height":250}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"TEM cross-sectional view of a device where layers Pd, HfO₂, and InGaAs can be seen with the image representing in situ 50 °C H2S passivated InGaAs\"},{\"panel_id\":\"b\",\"text\":\"TEM cross-sectional view of unpassivated InGaAs device\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pd | (HfO2)| Interfacial layer (IL)| \\n|---------|-----------------|-----------|\\n| 9nm | 9.4 nm | 0.8 nm |\"},{\"panel_id\":\"b\",\"text\":\"| Pd | (HfO2) | Interfacial layer (IL)| \\n|---------|-----------------|-----------|\\n| 9nm | 5.2 nm | 1.9 nm |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The interfacial layer represents the interfacial oxide growth which can be used to qualify the working of passivation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For a 50 °C in situ H2S passivated InGaAs device the interfacial layer (IL) thickness is 0.8 nm between the HfO2 and InGaAs. This is less than half the thickness of the IL of 1.9 nm measured by TEM for the unpassivated device in b. This indicates that this in situ passivation technique is effective in significantly inhibiting interfacial oxide growth.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Bright field TEM micrographs were performed over f Pd/ ALD HfO2 /InGaAs/InP MOS devices.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The actual HfO2 layer and interfacial layer (IL) thicknesses measured by TEM are as follows\\n1. 5.2 nm HfO2 and 1.9 nm IL for unpassivated device\\n2. 9.4 nm HfO2 and 0.8 nm IL for 50 °C H2S passivated device\\n3. 13.5 nm HfO2 and 0.9 nm IL for 200 °C H2S passivated device\\n4. 10.8 nm HfO2 and 0.9 nm IL for 350 °C H2S passivated device\\n5. 11 nm HfO2 and 1.3 nm IL for (NH4)2S passivated device.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_47_fig_4.jpg","caption":"Fig. 4. Atomic force micrographs of two $\\mathrm{Al}_2\\mathrm{O}_3$ films of 211 Å and 157 Å thicknesses both having RMS roughnesses of $5^{\\circ}$ .","id":"validation/atomic-layer-deposition/experimental-usecase/47/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/47/fig_4","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/Wade et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":642,"height":372,"image_format":"jpeg","image_sha256":"07fa38ff13183307062375a281472d25209edad8a303114f89d3c286d7f5bbdb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":325,"height":370},{"panel_id":"b","x":326,"y":0,"width":314,"height":368}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_58_fig_1.jpg","caption":"FIG. 1. Cross sectional HR-TEM images of (a) PVD Co film grown at $t_r$ and (b) PE-ALD Co.","id":"validation/atomic-layer-deposition/experimental-usecase/58/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/58/fig_1","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/Lee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":602,"height":305,"image_format":"jpeg","image_sha256":"685986e0192b25ed9cdf50b66a8a85684bd052ce4d1ae321f43ba8699930a814","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":5,"width":301,"height":300},{"panel_id":"b","x":305,"y":3,"width":300,"height":303}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_58_fig_4.jpg","caption":"FIG. 4. Cross sectional HR-TEM images of PE-ALD Co film annealed at $800^{\\circ}\\mathrm{C}$ .","id":"validation/atomic-layer-deposition/experimental-usecase/58/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/58/fig_4","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/Lee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":469,"height":467,"image_format":"jpeg","image_sha256":"c65cbe406961163f97416804e649ca7b61ba9ee122eb0f7c5c4bd8f80877981f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":8,"width":465,"height":458}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG5_a.jpg","caption":"(a)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG5_a","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG5_a","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_a.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":441,"height":445,"image_format":"jpeg","image_sha256":"d8fbbc20b864e39453651fffb23067e6f5aeb0a84da7887346f23e5bfc988c6c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":6,"width":437,"height":433}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a high-resolution view of a nanostructured film composed of closely packed grains. Individual grains are clearly resolved, with sizes mostly in the range of a few nanometers. The grains appear irregular and interconnected, forming a dense network with visible boundaries. The overall texture suggests a polycrystalline structure rather than an amorphous film.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The small, closely packed grains suggest that the film likely formed through nucleation at many sites followed by limited grain growth. This is typical of low-temperature deposition or processes where surface diffusion is restricted.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A fine-grained structure increases the density of grain boundaries, which can affect electrical conductivity, diffusion, and mechanical stability. Depending on the application, this can either enhance performance or introduce additional scattering and resistance.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A fine-grained structure increases the density of grain boundaries, which can affect electrical conductivity, diffusion, and mechanical stability. Depending on the application, this can either enhance performance or introduce additional scattering and resistance.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At nanometer scales, grain size strongly influences film behavior, including charge transport, chemical reactivity, and stability. Knowing the grain size distribution helps link deposition conditions to final film performance and reliability.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG5_b.jpg","caption":"","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG5_b","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG5_b","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_b.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"not_found"},"width":441,"height":442,"image_format":"jpeg","image_sha256":"58a360c825b600800e431ac6bb3bfd10af77e07774c6880d6c174b11255642f9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":10,"width":425,"height":431}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This image shows a dense nanocrystalline surface with closely packed grains in the 5–15 nm size range. The grains have irregular shapes and form a continuous network with well-defined boundaries, indicating a polycrystalline film rather than an amorphous layer. There are no obvious pinholes or large voids visible at this scale, suggesting good surface coverage. The contrast variations across grains are consistent with differences in crystallographic orientation or thickness, which is typical for nanoscale oxide films.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The small, clearly separated grains and visible boundaries suggest the film is polycrystalline with nanoscale crystallites rather than amorphous. At this grain size, the film likely formed through many nucleation events followed by limited grain growth, which is common for low-temperature or plasma-assisted deposition processes. The structure points to crystallinity being present but not yet coarsened.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At higher temperatures or after annealing, the grains would likely grow larger, and the number of grain boundaries would decrease. You would expect smoother contrast regions, fewer very small grains, and possibly a more uniform grain size distribution. In some cases, grain coalescence could also reduce boundary density and slightly densify the film further.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Substrate temperature during growth\\n-Plasma activation or reactive species energy \\n-Nucleation density during the initial cycles\\n-Growth per cycle and overall thickness\\nSurface diffusion length of adsorbed species\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A dense nanocrystalline structure provides full surface coverage and minimizes large defects, which helps keep properties more uniform across the film. While grain boundaries can influence transport properties, their small and evenly distributed nature often leads to predictable, repeatable behavior rather than localized failures. This is generally preferable to films with pinholes or large voids, especially in thin-film devices.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG5_c.jpg","caption":"(c)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG5_c","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG5_c","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_c.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":442,"height":439,"image_format":"jpeg","image_sha256":"18366dfcfd6dd1c4be1b5858155f18ce021cd7d99cc6eb8892a25308bd23c78f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":11,"y":13,"width":427,"height":423}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This microscopy image shows a dense nanocrystalline surface with several localized regions highlighted by yellow circles. The circled areas correspond to darker contrast features that differ slightly from the surrounding grains, possibly indicating local defects, compositional variations, or thickness differences. The surrounding microstructure consists of closely packed nanograins with clear grain boundaries, and no large voids or pinholes are visible at this scale. The scale bar indicates that all highlighted features are on the order of a few to tens of nanometers.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The absence of large voids or cracks indicates that the film is continuous across the imaged area. Even though nanoscale contrast variations exist, the overall microstructure remains dense and interconnected, which is important for maintaining mechanical integrity and consistent functional properties.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No. Their size is comparable to individual grains or small grain clusters.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Local differences in nucleation during early growth\\nSlight variations in surface diffusion length\\nPlasma-induced non-uniformities at the nanoscale\\nMinor stoichiometric fluctuations across grains\\nGrain coalescence effects during film thickening\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG5_d.jpg","caption":"(d)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG5_d","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG5_d","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_d.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_d.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":447,"height":445,"image_format":"jpeg","image_sha256":"a46d590ee06922de8364b160b7d5345dda068caaef83ad35cd39a21ca9c2de28","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":11,"y":9,"width":429,"height":431}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a cross-sectional view of a multilayer thin-film stack on a silicon wafer. A thin SiOx layer separates the Si substrate from a thicker NiO film, which is capped by a thin carbon layer. The NiO layer exhibits vertical contrast variations, suggesting a textured or columnar microstructure, while both interfaces appear well defined. The thickness of the NiO film is on the order of several tens of nanometers, consistent with controlled thin-film deposition.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SiOx layer acts as a buffer between the silicon substrate and the NiO film. It helps prevent interdiffusion or unwanted reactions and provides a more stable surface for NiO nucleation, which can improve film uniformity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The NiO layer is much thicker than the carbon overlayer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The non-uniform vertical contrast suggests that the NiO film may be columnar or textured rather than fully amorphous. Such microstructure can influence electrical conductivity, diffusion pathways, and film density.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Cross-sectional imaging allows direct verification of layer thickness, continuity, and interface quality. This information is critical for confirming that the deposition process produces films with the intended structure and performance characteristics.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG5_e.jpg","caption":"(e)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG5_e","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG5_e","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_e.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_e.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":441,"height":442,"image_format":"jpeg","image_sha256":"8815459f8d292f5de4a4994ee2427a7cadea005eeb9398a7eac2441ce192e54d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":10,"width":431,"height":429}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a cross-sectional view of a multilayer thin-film stack deposited on a silicon wafer. From bottom to top, the stack consists of a Si substrate, a thin SiOₓ interfacial layer, a thicker NiO film, and a thin carbon overlayer. The layer interfaces are clearly distinguishable, indicating well-defined stacking. The NiO layer exhibits internal contrast variations across its thickness, suggesting microstructural inhomogeneity, although no specific grain morphology can be conclusively identified from this image alone.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SiOx layer acts as an interfacial buffer between the silicon substrate and the NiO film. It can influence nucleation behavior, helping the NiO grow more uniformly and preventing direct reactions between NiO and the Si substrate during deposition.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The NiO layer is significantly thicker than the carbon overlayer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The vertical contrast variations suggest that the NiO film may have a columnar or textured microstructure rather than being fully amorphous. This kind of structure can affect properties such as density, conductivity, and diffusion behavior.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Layer thickness and interface quality directly affect electrical, optical, and chemical performance. Non-uniform films or poorly defined interfaces can lead to device failure or inconsistent behavior, so cross-sectional imaging is essential for validating the deposition process.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG5_f.jpg","caption":"(f) FIG. 5. Top-view (top) HAADF scanning TEM images of (a) NiO $_{\\text{Alanis}}$ ( $\\sim11 \\, \\text{nm}$ ), (b) NiO $_{\\text{MeCp}}$ ( $\\sim9 \\, \\text{nm}$ ), and (c) NiO $_{\\text{Bu-MeAMD}}$ films ( $\\sim8 \\, \\text{nm}$ ). Some of the areas with a lower film thickness in the NiO $_{\\text{Bu-MeAMD}}$ films are marked by circles. Cross-sectional BF STEM images of (d) NiO $_{\\text{Alanis}}$ , (e) NiO $_{\\text{MeCp}}$ , and (f) NiO $_{\\text{Bu-MeAMD}}$ films, respectively.","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG5_f","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG5_f","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_f.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_f.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":445,"height":442,"image_format":"jpeg","image_sha256":"1e3774af8176cc4612c98930348ea6a91de4f6d924d93a48ee7b12fedc11cea0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":12,"y":14,"width":427,"height":425}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a cross-sectional view of a NiO thin film deposited on a Si wafer with a thin SiOx interlayer and a carbon overlayer. Within the NiO layer, short grains are clearly visible near the NiO/SiOx interface, as indicated by arrows. These grains exhibit limited vertical growth compared to typical columnar structures, suggesting restricted grain growth during the early stages of film formation. The interfaces between layers remain sharp and well defined.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The short grains are most likely formed during the initial nucleation stage near the NiO/SiOx interface. Limited surface diffusion or rapid nucleation can produce many small grains that do not fully coalesce into long columnar structures.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They are shorter and less vertically extended than grains in the upper portion of the film.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Short grains increase the density of grain boundaries near the interface, which can influence charge transport, diffusion, and mechanical adhesion. This region may exhibit higher resistivity or act as a barrier layer compared to regions with longer grains.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Short-grain regions can dominate interface behavior, which is critical for devices relying on charge injection or transport across interfaces. Understanding and controlling grain length helps tailor film performance and reliability.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_18a67104683988db8761e08dccfbb99f0152c8e7bd47bc3608045d11173d817f.jpg","caption":"","id":"validation/atomic-layer-etching/simulation-usecase/30/18a67104683988db8761e08dccfbb99f0152c8e7bd47bc3608045d11173d817f","sample_id":"atomic-layer-etching/simulation-usecase/30/18a67104683988db8761e08dccfbb99f0152c8e7bd47bc3608045d11173d817f","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"image panel"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/18a67104683988db8761e08dccfbb99f0152c8e7bd47bc3608045d11173d817f.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/18a67104683988db8761e08dccfbb99f0152c8e7bd47bc3608045d11173d817f.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"not_found"},"width":675,"height":358,"image_format":"jpeg","image_sha256":"9bf36f2548c95ac2059fa3607cacf16ac802be7b6a0a0d9a9a56c6110f4a04bb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":7,"width":141,"height":349},{"panel_id":"b","x":154,"y":6,"width":372,"height":354},{"panel_id":"c","x":527,"y":5,"width":146,"height":352}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_9.jpg","caption":"Figure 9. Cross-sectional BE-TEM images of (a) unetched $57.5 \\mathrm{nm}$ (includes $1.5 \\mathrm{nm}$ native silicon oxide) $\\mathrm{Al}_2\\mathrm{O}_3$ after exposing to 150 cycles of each $3 \\mathrm{s}$ long $\\mathrm{CCl}_4$ pulses and (b) after etching about $18 \\mathrm{nm} \\mathrm{Al}_2\\mathrm{O}_3$ film by 150 cycles of the $\\mathrm{NbF}_5 + \\mathrm{CCl}_4$ ALEt process. Initially, about $56 \\mathrm{nm} \\mathrm{Al}_2\\mathrm{O}_3$ was measured by SE (TEM not taken). The $\\mathrm{NbF}_5$ and $\\mathrm{CCl}_4$ pulse times were 3 and $0.5 \\mathrm{s}$ , respectively. For both experiments, an etch temperature of $460^{\\circ}\\mathrm{C}$ was used.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_9","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_9","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":892,"height":444,"image_format":"jpeg","image_sha256":"c3816c12a75854a290b5cf47b78f8e456e4a15ccf44da9287bd7b9ba336acf73","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":6,"width":443,"height":441},{"panel_id":"b","x":448,"y":5,"width":437,"height":440}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_11_fig1.jpg","caption":"Fig.1. TiN film on native silicon oxide.","id":"validation/atomic-layer-deposition/experimental-usecase/11/fig1","sample_id":"atomic-layer-deposition/experimental-usecase/11/fig1","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A cross-sectional TEM image of an ALD-grown TiN film on native silicon oxide (scale bar 20 nm). The film shows dense, vertically oriented columnar grains with continuous grain boundaries running through the film thickness; the TiN/SiO₂ interface is sharp, indicating good adhesion and conformal ALD growth.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The columnar grain structure indicates strong vertical grain boundaries, which can serve as fast diffusion pathways for copper, potentially compromising barrier performance. However, the dense film and sharp interface suggest good growth uniformity and adhesion, making TiN an attractive barrier candidate when complemented by techniques such as nanolaminates to disrupt grain boundary continuity. These structural insights directly inform how TiN behaves under thermal and chemical stress during device fabrication.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The grain interiors appear brighter and more uniform, while the grain boundaries appear as darker vertical lines extending through the film thickness.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Continuous columnar grain boundaries, Dense polycrystalline structure, Sharp TiN/SiO₂ interface, Full-thickness grain alignment\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":647,"height":241}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/K.-E. Elers et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":647,"height":241,"image_format":"jpeg","image_sha256":"4e72412971d99d5e720deed25cf0835032f6c9b25ff35b261ac1fe2a1320f153","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_11_fig_4.jpg","caption":"Fig. 4. Marked copper pitting when $\\mathbf{W}_{x}\\mathbf{N}$ film is deposited on copper (a). No copper pitting when $\\mathrm{WN}_x\\mathrm{C}_y$ film is deposited on copper (b).","id":"validation/atomic-layer-deposition/experimental-usecase/11/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/11/fig_4","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows severe copper pitting when WₓN is deposited, evidenced by large dark voids and etched regions.\"},{\"panel_id\":\"b\",\"text\":\"shows a smooth, intact copper surface when WNₓCᵧ is deposited, demonstrating that adding triethylboron prevents corrosive by-product attack and eliminates copper pitting.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The absence of copper pitting indicates that WNₓCᵧ films prevent corrosive by-products, such as HF and HCl, from forming during deposition. This chemical stability is essential in semiconductor applications because surface damage severely compromises barrier integrity, adhesion, and overall device reliability. WNₓCᵧ’s compatibility with copper therefore makes it a superior candidate for diffusion barrier layers in advanced interconnect structures.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Panel (a) shows deep pits and surface damage, while panel (b) shows a smooth, uniform copper surface with no visible pitting.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Presence of pits and voids in WₓN deposition, Smooth, intact copper surface after WNₓCᵧ deposition, Absence of corrosive by-product attack in panel (b), Clear contrast between damaged and undamaged regions\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":659,"height":474},{"panel_id":"b","x":8,"y":502,"width":651,"height":431}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/K.-E. Elers et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":659,"height":933,"image_format":"jpeg","image_sha256":"c5762296ace71c31905eaed3e6f19e930dc52d3989a29db329fa6fb6a2f7aa44","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_11_fig_5.jpg","caption":"Fig. 5. Left figure depicts copper after TiN deposition; marked pitting can be observed (a). Right figure depicts a copper surface where TiN film is deposited on top of 50 cycles $\\mathrm{WN_xC_y}$ film (b).","id":"validation/atomic-layer-deposition/experimental-usecase/11/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/11/fig_5","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows severe copper pitting when TiN is deposited directly on copper, visible as numerous dark etched regions.\"},{\"panel_id\":\"b\",\"text\":\"shows a smooth, pit-free copper surface when a thin WNₓCᵧ layer (~50 cycles) is inserted before TiN deposition, demonstrating that the interlayer prevents corrosive by-product attack.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Preventing copper pitting is essential because surface defects compromise adhesion, increase electrical resistance, and reduce long-term reliability of interconnect structures. The WNₓCᵧ interlayer acts as a chemical buffer that blocks corrosive by-products generated during TiN ALD, preserving copper surface integrity. This enables TiN to be used in multilayer barrier stacks without damaging underlying copper, improving overall device performance and stability.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Direct TiN deposition produces heavy pitting and surface damage, while TiN deposited over WNₓCᵧ results in a smooth, pit-free copper surface.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, adding the WNₓCᵧ interlayer prevents copper pitting that otherwise occurs during direct TiN deposition.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Absence of pits or voids, Smooth and continuous surface, Lack of corrosive attack patterns, Reduced by-product interaction with copper\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":650,"height":440},{"panel_id":"b","x":0,"y":469,"width":650,"height":436}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/K.-E. Elers et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":650,"height":905,"image_format":"jpeg","image_sha256":"e066ed024d54efea2c57ebbb1dde6003be21ab408522b8587a78de2ad85150b6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_11_fig_6.jpg","caption":"Fig. 6. Nanolaminate film stack of (TiN $(10\\mathrm{nm}) / 8\\times (\\mathrm{W_xN}(2\\mathrm{nm}) + \\mathrm{TiN}(2\\mathrm{nm})) / \\mathrm{TiN}(10\\mathrm{nm}))$ .","id":"validation/atomic-layer-deposition/experimental-usecase/11/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/11/fig_6","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"the TEM image displays a nanolaminate consisting of TiN (10 nm) at the top and bottom, with eight repeated bilayers of WₓN (2 nm) and TiN (2 nm) in between. The alternating layers appear as clear, periodic dark–bright bands, demonstrating precise ALD thickness control and well-defined interfaces. The structure effectively interrupts continuous grain boundaries, improving its function as a diffusion barrier.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The alternating TiN and WₓN layers create a tortuous diffusion path that significantly hinders the movement of impurities such as copper. By breaking continuous grain boundaries, the nanolaminate structure prevents fast diffusion channels and enhances thermal and chemical stability. This precise ALD-engineered layering provides superior barrier reliability compared to single-layer nitride films, making it suitable for advanced interconnect technologies.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TiN layers appear brighter, while the WₓN layers appear darker, forming a consistent repeating pattern that confirms uniform bilayer thickness across the structure.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the ALD process clearly forms well-defined alternating TiN and WₓN layers, visible as distinct contrast bands in the TEM image.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Multiple well-defined interfaces, Alternating high-contrast layers, Disruption of continuous grain boundaries, Uniform nanometer-scale layer thickness\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":830,"height":341}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/K.-E. Elers et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":830,"height":341,"image_format":"jpeg","image_sha256":"d804103abc77167606542d1b9c8a360f876ee1f908abe377c9b59914afd6ccb0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_11_fig_7.jpg","caption":"Fig. 7. Nanolaminate film stack of $(9\\times (\\mathrm{WN_xC_y}(2\\mathrm{nm}) + \\mathrm{TiN}(2\\mathrm{nm})))$ .","id":"validation/atomic-layer-deposition/experimental-usecase/11/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/11/fig_7","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The TEM micrograph displays a nanolaminate structure formed by nine repeated bilayers of WNₓCᵧ (2 nm) and TiN (2 nm). The alternating dark and light bands indicate well-defined, nanometer-scale layering with uniform thickness. This periodic structure confirms precise ALD control and highlights the multilayer design intended to disrupt continuous grain boundaries and enhance diffusion barrier performance.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The alternating WNₓCᵧ and TiN layers create a highly segmented microstructure that prevents continuous grain boundaries from forming. This forces diffusing species such as copper to follow a much longer, more tortuous path, significantly reducing the likelihood of penetration through the barrier. The well-controlled, nanoscale periodicity provided by ALD ensures predictable performance, making the structure ideal for high-reliability interconnect applications.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The WNₓCᵧ layers appear darker while the TiN layers appear brighter, forming a periodic pattern that repeats uniformly throughout the film.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the TEM image clearly shows alternating contrast bands consistent with sequential WNₓCᵧ and TiN layering.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Multiple nanoscale interfaces, Uniform 2 nm periodicity, Alternating composition layers, Interrupted grain boundary pathways\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":664,"height":536}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/K.-E. Elers et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":664,"height":536,"image_format":"jpeg","image_sha256":"236cd6a16bbdb8efcb7d6ef0dc7806a7690c1c93ef28d3c8367c0f4677a5c30f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig2.jpg","caption":"FIG.2. Cross-sectional FE-SEM image of as-deposited $\\mathrm{Ga}_2\\mathrm{O}_3$ thin film on patterned $\\mathrm{SiO}_2 / \\mathrm{Si}$ substrate deposited at $200^{\\circ}\\mathrm{C}$ using PEALD.","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig2","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig2","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":6,"width":464,"height":360}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":469,"height":369,"image_format":"jpeg","image_sha256":"27b83a5525700d0beb093cd23a1041a75d7aedd9e48d502ef453c86498bc02f7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_46_fig_3.jpg","caption":"FIG. 3. Bright field TEM micrographs of $\\mathrm{Pd / 9nm}$ (nominal) ALD $\\mathrm{HfO_2 / InGaAs / InP}$ MOS devices for (a) in situ $50^{\\circ}\\mathrm{C}$ $\\mathrm{H}_2\\mathrm{S}$ passivated InGaAs and (b) unpassivated InGaAs. The actual $\\mathrm{HfO_2}$ layer [and interfacial layer (IL)] thicknesses measured by TEM were $5.2 \\mathrm{nm}$ (1.9 nm IL) unpassivated device, $9.4 \\mathrm{nm}$ (0.8 nm IL) $50^{\\circ}\\mathrm{C}$ device, $13.5 \\mathrm{nm}$ (0.9 nm IL) $200^{\\circ}\\mathrm{C}$ device, $10.8 \\mathrm{nm}$ (0.9 nm IL) $350^{\\circ}\\mathrm{C}$ device, and $11 \\mathrm{nm}$ (1.3 nm IL) $(\\mathrm{NH_4})_2\\mathrm{S}$ passivated device.","id":"validation/atomic-layer-deposition/experimental-usecase/46/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/46/fig_3","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"TEM cross-sectional view of a device where layers Pd, HfO₂, and InGaAs can be seen with the image representing in situ 50 °C H2S passivated InGaAs\"},{\"panel_id\":\"b\",\"text\":\"TEM cross-sectional view of unpassivated InGaAs device\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pd | (HfO2)| Interfacial layer (IL)| \\n|---------|-----------------|-----------|\\n| 9nm | 9.4 nm | 0.8 nm |\"},{\"panel_id\":\"b\",\"text\":\"| Pd | (HfO2) | Interfacial layer (IL)| \\n|---------|-----------------|-----------|\\n| 9nm | 5.2 nm | 1.9 nm |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The interfacial layer represents the interfacial oxide growth which can be used to qualify the working of passivation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For a 50 °C in situ H2S passivated InGaAs device the interfacial layer (IL) thickness is 0.8 nm between the HfO2 and InGaAs. This is less than half the thickness of the IL of 1.9 nm measured by TEM for the unpassivated device in b. This indicates that this in situ passivation technique is effective in significantly inhibiting interfacial oxide growth.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Bright field TEM micrographs were performed over f Pd/ ALD HfO2 /InGaAs/InP MOS devices.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The actual HfO2 layer and interfacial layer (IL) thicknesses measured by TEM are as follows\\n1. 5.2 nm HfO2 and 1.9 nm IL for unpassivated device\\n2. 9.4 nm HfO2 and 0.8 nm IL for 50 °C H2S passivated device\\n3. 13.5 nm HfO2 and 0.9 nm IL for 200 °C H2S passivated device\\n4. 10.8 nm HfO2 and 0.9 nm IL for 350 °C H2S passivated device\\n5. 11 nm HfO2 and 1.3 nm IL for (NH4)2S passivated device.\"}]}]","bbox":[{"panel_id":"b","x":4,"y":259,"width":449,"height":234},{"panel_id":"a","x":2,"y":0,"width":454,"height":250}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/OaConnor et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":456,"height":494,"image_format":"jpeg","image_sha256":"806d98f31645f1289c8b2a07599839a34c35d1a2796a7b2111969930f17523f9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_47_fig_4.jpg","caption":"Fig. 4. Atomic force micrographs of two $\\mathrm{Al}_2\\mathrm{O}_3$ films of 211 Å and 157 Å thicknesses both having RMS roughnesses of $5^{\\circ}$ .","id":"validation/atomic-layer-deposition/experimental-usecase/47/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/47/fig_4","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":3,"width":325,"height":370},{"panel_id":"b","x":326,"y":0,"width":314,"height":368}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/Wade et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":642,"height":372,"image_format":"jpeg","image_sha256":"07fa38ff13183307062375a281472d25209edad8a303114f89d3c286d7f5bbdb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_58_fig_1.jpg","caption":"FIG. 1. Cross sectional HR-TEM images of (a) PVD Co film grown at $t_r$ and (b) PE-ALD Co.","id":"validation/atomic-layer-deposition/experimental-usecase/58/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/58/fig_1","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":5,"width":301,"height":300},{"panel_id":"b","x":305,"y":3,"width":300,"height":303}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/Lee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":602,"height":305,"image_format":"jpeg","image_sha256":"685986e0192b25ed9cdf50b66a8a85684bd052ce4d1ae321f43ba8699930a814","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_58_fig_4.jpg","caption":"FIG. 4. Cross sectional HR-TEM images of PE-ALD Co film annealed at $800^{\\circ}\\mathrm{C}$ .","id":"validation/atomic-layer-deposition/experimental-usecase/58/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/58/fig_4","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":7,"y":8,"width":465,"height":458}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/Lee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":469,"height":467,"image_format":"jpeg","image_sha256":"c65cbe406961163f97416804e649ca7b61ba9ee122eb0f7c5c4bd8f80877981f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG5_a.jpg","caption":"(a)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG5_a","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG5_a","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a high-resolution view of a nanostructured film composed of closely packed grains. Individual grains are clearly resolved, with sizes mostly in the range of a few nanometers. The grains appear irregular and interconnected, forming a dense network with visible boundaries. The overall texture suggests a polycrystalline structure rather than an amorphous film.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The small, closely packed grains suggest that the film likely formed through nucleation at many sites followed by limited grain growth. This is typical of low-temperature deposition or processes where surface diffusion is restricted.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A fine-grained structure increases the density of grain boundaries, which can affect electrical conductivity, diffusion, and mechanical stability. Depending on the application, this can either enhance performance or introduce additional scattering and resistance.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A fine-grained structure increases the density of grain boundaries, which can affect electrical conductivity, diffusion, and mechanical stability. Depending on the application, this can either enhance performance or introduce additional scattering and resistance.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At nanometer scales, grain size strongly influences film behavior, including charge transport, chemical reactivity, and stability. Knowing the grain size distribution helps link deposition conditions to final film performance and reliability.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":6,"width":437,"height":433}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_a.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":441,"height":445,"image_format":"jpeg","image_sha256":"d8fbbc20b864e39453651fffb23067e6f5aeb0a84da7887346f23e5bfc988c6c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG5_b.jpg","caption":"","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG5_b","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG5_b","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This image shows a dense nanocrystalline surface with closely packed grains in the 5–15 nm size range. The grains have irregular shapes and form a continuous network with well-defined boundaries, indicating a polycrystalline film rather than an amorphous layer. There are no obvious pinholes or large voids visible at this scale, suggesting good surface coverage. The contrast variations across grains are consistent with differences in crystallographic orientation or thickness, which is typical for nanoscale oxide films.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The small, clearly separated grains and visible boundaries suggest the film is polycrystalline with nanoscale crystallites rather than amorphous. At this grain size, the film likely formed through many nucleation events followed by limited grain growth, which is common for low-temperature or plasma-assisted deposition processes. The structure points to crystallinity being present but not yet coarsened.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At higher temperatures or after annealing, the grains would likely grow larger, and the number of grain boundaries would decrease. You would expect smoother contrast regions, fewer very small grains, and possibly a more uniform grain size distribution. In some cases, grain coalescence could also reduce boundary density and slightly densify the film further.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Substrate temperature during growth\\n-Plasma activation or reactive species energy \\n-Nucleation density during the initial cycles\\n-Growth per cycle and overall thickness\\nSurface diffusion length of adsorbed species\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A dense nanocrystalline structure provides full surface coverage and minimizes large defects, which helps keep properties more uniform across the film. While grain boundaries can influence transport properties, their small and evenly distributed nature often leads to predictable, repeatable behavior rather than localized failures. This is generally preferable to films with pinholes or large voids, especially in thin-film devices.\"}]}]","bbox":[{"panel_id":"a","x":10,"y":10,"width":425,"height":431}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_b.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"not_found"},"width":441,"height":442,"image_format":"jpeg","image_sha256":"58a360c825b600800e431ac6bb3bfd10af77e07774c6880d6c174b11255642f9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG5_c.jpg","caption":"(c)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG5_c","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG5_c","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This microscopy image shows a dense nanocrystalline surface with several localized regions highlighted by yellow circles. The circled areas correspond to darker contrast features that differ slightly from the surrounding grains, possibly indicating local defects, compositional variations, or thickness differences. The surrounding microstructure consists of closely packed nanograins with clear grain boundaries, and no large voids or pinholes are visible at this scale. The scale bar indicates that all highlighted features are on the order of a few to tens of nanometers.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The absence of large voids or cracks indicates that the film is continuous across the imaged area. Even though nanoscale contrast variations exist, the overall microstructure remains dense and interconnected, which is important for maintaining mechanical integrity and consistent functional properties.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No. Their size is comparable to individual grains or small grain clusters.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Local differences in nucleation during early growth\\nSlight variations in surface diffusion length\\nPlasma-induced non-uniformities at the nanoscale\\nMinor stoichiometric fluctuations across grains\\nGrain coalescence effects during film thickening\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":11,"y":13,"width":427,"height":423}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_c.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":442,"height":439,"image_format":"jpeg","image_sha256":"18366dfcfd6dd1c4be1b5858155f18ce021cd7d99cc6eb8892a25308bd23c78f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG5_d.jpg","caption":"(d)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG5_d","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG5_d","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a cross-sectional view of a multilayer thin-film stack on a silicon wafer. A thin SiOx layer separates the Si substrate from a thicker NiO film, which is capped by a thin carbon layer. The NiO layer exhibits vertical contrast variations, suggesting a textured or columnar microstructure, while both interfaces appear well defined. The thickness of the NiO film is on the order of several tens of nanometers, consistent with controlled thin-film deposition.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SiOx layer acts as a buffer between the silicon substrate and the NiO film. It helps prevent interdiffusion or unwanted reactions and provides a more stable surface for NiO nucleation, which can improve film uniformity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The NiO layer is much thicker than the carbon overlayer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The non-uniform vertical contrast suggests that the NiO film may be columnar or textured rather than fully amorphous. Such microstructure can influence electrical conductivity, diffusion pathways, and film density.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Cross-sectional imaging allows direct verification of layer thickness, continuity, and interface quality. This information is critical for confirming that the deposition process produces films with the intended structure and performance characteristics.\"}]}]","bbox":[{"panel_id":"a","x":11,"y":9,"width":429,"height":431}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_d.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_d.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":447,"height":445,"image_format":"jpeg","image_sha256":"a46d590ee06922de8364b160b7d5345dda068caaef83ad35cd39a21ca9c2de28","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG5_e.jpg","caption":"(e)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG5_e","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG5_e","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a cross-sectional view of a multilayer thin-film stack deposited on a silicon wafer. From bottom to top, the stack consists of a Si substrate, a thin SiOₓ interfacial layer, a thicker NiO film, and a thin carbon overlayer. The layer interfaces are clearly distinguishable, indicating well-defined stacking. The NiO layer exhibits internal contrast variations across its thickness, suggesting microstructural inhomogeneity, although no specific grain morphology can be conclusively identified from this image alone.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SiOx layer acts as an interfacial buffer between the silicon substrate and the NiO film. It can influence nucleation behavior, helping the NiO grow more uniformly and preventing direct reactions between NiO and the Si substrate during deposition.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The NiO layer is significantly thicker than the carbon overlayer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The vertical contrast variations suggest that the NiO film may have a columnar or textured microstructure rather than being fully amorphous. This kind of structure can affect properties such as density, conductivity, and diffusion behavior.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Layer thickness and interface quality directly affect electrical, optical, and chemical performance. Non-uniform films or poorly defined interfaces can lead to device failure or inconsistent behavior, so cross-sectional imaging is essential for validating the deposition process.\"}]}]","bbox":[{"panel_id":"a","x":8,"y":10,"width":431,"height":429}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_e.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_e.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":441,"height":442,"image_format":"jpeg","image_sha256":"8815459f8d292f5de4a4994ee2427a7cadea005eeb9398a7eac2441ce192e54d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG5_f.jpg","caption":"(f) FIG. 5. Top-view (top) HAADF scanning TEM images of (a) NiO $_{\\text{Alanis}}$ ( $\\sim11 \\, \\text{nm}$ ), (b) NiO $_{\\text{MeCp}}$ ( $\\sim9 \\, \\text{nm}$ ), and (c) NiO $_{\\text{Bu-MeAMD}}$ films ( $\\sim8 \\, \\text{nm}$ ). Some of the areas with a lower film thickness in the NiO $_{\\text{Bu-MeAMD}}$ films are marked by circles. Cross-sectional BF STEM images of (d) NiO $_{\\text{Alanis}}$ , (e) NiO $_{\\text{MeCp}}$ , and (f) NiO $_{\\text{Bu-MeAMD}}$ films, respectively.","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG5_f","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG5_f","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a cross-sectional view of a NiO thin film deposited on a Si wafer with a thin SiOx interlayer and a carbon overlayer. Within the NiO layer, short grains are clearly visible near the NiO/SiOx interface, as indicated by arrows. These grains exhibit limited vertical growth compared to typical columnar structures, suggesting restricted grain growth during the early stages of film formation. The interfaces between layers remain sharp and well defined.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The short grains are most likely formed during the initial nucleation stage near the NiO/SiOx interface. Limited surface diffusion or rapid nucleation can produce many small grains that do not fully coalesce into long columnar structures.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They are shorter and less vertically extended than grains in the upper portion of the film.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Short grains increase the density of grain boundaries near the interface, which can influence charge transport, diffusion, and mechanical adhesion. This region may exhibit higher resistivity or act as a barrier layer compared to regions with longer grains.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Short-grain regions can dominate interface behavior, which is critical for devices relying on charge injection or transport across interfaces. Understanding and controlling grain length helps tailor film performance and reliability.\"}]}]","bbox":[{"panel_id":"a","x":12,"y":14,"width":427,"height":425}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_f.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_f.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":445,"height":442,"image_format":"jpeg","image_sha256":"1e3774af8176cc4612c98930348ea6a91de4f6d924d93a48ee7b12fedc11cea0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_18a67104683988db8761e08dccfbb99f0152c8e7bd47bc3608045d11173d817f.jpg","caption":"","id":"validation/atomic-layer-etching/simulation-usecase/30/18a67104683988db8761e08dccfbb99f0152c8e7bd47bc3608045d11173d817f","sample_id":"atomic-layer-etching/simulation-usecase/30/18a67104683988db8761e08dccfbb99f0152c8e7bd47bc3608045d11173d817f","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":9,"y":7,"width":141,"height":349},{"panel_id":"b","x":154,"y":6,"width":372,"height":354},{"panel_id":"c","x":527,"y":5,"width":146,"height":352}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/18a67104683988db8761e08dccfbb99f0152c8e7bd47bc3608045d11173d817f.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/18a67104683988db8761e08dccfbb99f0152c8e7bd47bc3608045d11173d817f.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"not_found"},"width":675,"height":358,"image_format":"jpeg","image_sha256":"9bf36f2548c95ac2059fa3607cacf16ac802be7b6a0a0d9a9a56c6110f4a04bb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_9.jpg","caption":"Figure 9. Cross-sectional BE-TEM images of (a) unetched $57.5 \\mathrm{nm}$ (includes $1.5 \\mathrm{nm}$ native silicon oxide) $\\mathrm{Al}_2\\mathrm{O}_3$ after exposing to 150 cycles of each $3 \\mathrm{s}$ long $\\mathrm{CCl}_4$ pulses and (b) after etching about $18 \\mathrm{nm} \\mathrm{Al}_2\\mathrm{O}_3$ film by 150 cycles of the $\\mathrm{NbF}_5 + \\mathrm{CCl}_4$ ALEt process. Initially, about $56 \\mathrm{nm} \\mathrm{Al}_2\\mathrm{O}_3$ was measured by SE (TEM not taken). The $\\mathrm{NbF}_5$ and $\\mathrm{CCl}_4$ pulse times were 3 and $0.5 \\mathrm{s}$ , respectively. For both experiments, an etch temperature of $460^{\\circ}\\mathrm{C}$ was used.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_9","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_9","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":6,"width":443,"height":441},{"panel_id":"b","x":448,"y":5,"width":437,"height":440}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":892,"height":444,"image_format":"jpeg","image_sha256":"c3816c12a75854a290b5cf47b78f8e456e4a15ccf44da9287bd7b9ba336acf73","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/line-chart/test/metadata.jsonl b/subsets/line-chart/test/metadata.jsonl index 3967e87a858606670d9a0a575f620a82324347cb..9659a6d7c09f23619ed528f4091618dfb864d6fa 100644 --- a/subsets/line-chart/test/metadata.jsonl +++ b/subsets/line-chart/test/metadata.jsonl @@ -1,35 +1,35 @@ -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_2.jpg","caption":"Figure 2. QCM measurements for $\\mathrm{Al}_2\\mathrm{O}_3$ ALD at $58^{\\circ}C$ showing the linear growth of the $\\mathrm{Al}_2\\mathrm{O}_3$ ALD film over many reaction cycles. The average $\\mathrm{Al}_2\\mathrm{O}_3$ mass gain per ALD cycle is $30~\\mathrm{ng / cm^2}$ .","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_2","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":589,"height":364,"image_format":"jpeg","image_sha256":"bddee448af87923579afe43b35dc09cba825bdc0cbb20541d9c74dd4a256acbc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":589,"height":364}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows a linear increase in mass over time for the cycle sequence (1/ 20/ 2/ 30s) at 58 °C, starting at 0 ng/cm² at 0 seconds and reaching approximately 720 ng/cm² at 1000 seconds.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass (ng/cm²) |\\n|---|---|\\n| 0 | 0,00 |\\n| 7 | 21,78 |\\n| 15 | 34,85 |\\n| 42 | 31,95 |\\n| 46 | 53,73 |\\n| 56 | 53,73 |\\n| 58 | 65,35 |\\n| 86 | 61,00 |\\n| 89 | 81,33 |\\n| 98 | 82,78 |\\n| 100 | 97,30 |\\n| 133 | 92,95 |\\n| 132 | 119,09 |\\n| 140 | 117,63 |\\n| 144 | 127,80 |\\n| 175 | 121,99 |\\n| 175 | 148,13 |\\n| 182 | 145,23 |\\n| 187 | 155,39 |\\n| 215 | 152,49 |\\n| 218 | 174,27 |\\n| 226 | 177,18 |\\n| 228 | 191,70 |\\n| 258 | 184,44 |\\n| 260 | 201,87 |\\n| 273 | 206,22 |\\n| 273 | 219,29 |\\n| 301 | 209,13 |\\n| 302 | 230,91 |\\n| 313 | 233,82 |\\n| 315 | 246,89 |\\n| 345 | 238,17 |\\n| 346 | 264,32 |\\n| 355 | 265,77 |\\n| 359 | 278,84 |\\n| 387 | 270,12 |\\n| 389 | 293,36 |\\n| 398 | 294,81 |\\n| 405 | 306,43 |\\n| 433 | 302,07 |\\n| 431 | 322,41 |\\n| 445 | 328,22 |\\n| 445 | 339,83 |\\n| 475 | 331,12 |\\n| 476 | 355,81 |\\n| 486 | 357,26 |\\n| 487 | 367,43 |\\n| 519 | 363,07 |\\n| 519 | 381,95 |\\n| 529 | 384,85 |\\n| 531 | 396,47 |\\n| 559 | 389,21 |\\n| 562 | 416,80 |\\n| 573 | 421,16 |\\n| 573 | 421,16 |\\n| 604 | 419,71 |\\n| 604 | 445,85 |\\n| 614 | 445,85 |\\n| 616 | 456,02 |\\n| 647 | 453,11 |\\n| 648 | 474,90 |\\n| 659 | 474,90 |\\n| 660 | 486,51 |\\n| 691 | 482,16 |\\n| 694 | 502,49 |\\n| 705 | 517,01 |\\n| 735 | 517,01 |\\n| 735 | 537,34 |\\n| 746 | 537,34 |\\n| 748 | 547,51 |\\n| 778 | 544,61 |\\n| 775 | 564,94 |\\n| 792 | 576,56 |\\n| 820 | 573,65 |\\n| 822 | 593,98 |\\n| 834 | 604,15 |\\n| 861 | 601,24 |\\n| 866 | 627,39 |\\n| 879 | 639,00 |\\n| 908 | 636,10 |\\n| 908 | 652,07 |\\n| 920 | 665,15 |\\n| 949 | 663,69 |\\n| 951 | 684,02 |\\n| 962 | 697,10 |\\n| 992 | 700,00 |\\n| 998 | 717,43 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The process is net deposition.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film growth is linear.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The process shows stepwise growth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The rate of deposition is constant. This is visually evident from the graph, where the mass increases along a straight line. If the rate of deposition would increase, the trendline would be curving upward.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_3.jpg","caption":"Figure 3. Detailed view of the QCM measurements at $58^{\\circ}C$ . The shaded areas show the time periods during which the TMA and water dosing valves were open. The mass increases coincide with the TMA and water exposures.","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_3","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":667,"height":448,"image_format":"jpeg","image_sha256":"60a256c00607eeaedc9e2135b9f152c158242a203768a0171e101d12c0b43013","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":667,"height":448}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the mass (in ng/cm²) over time (in seconds), showing a stepwise increase during the TMA exposure and water exposure phases, followed by distinct plateaus.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass (ng/cm²) |\\n|---|---|\\n| 2 | 0,19 |\\n| 4 | 24,62 |\\n| 12 | 25,00 |\\n| 14 | 35,53 |\\n| 45 | 31,58 |\\n| 46 | 55,45 |\\n| 56 | 56,39 |\\n| 57 | 66,92 |\\n| 87 | 62,78 |\\n| 89 | 85,34 |\\n| 98 | 87,59 |\\n| 100 | 98,12 |\\n| 129 | 93,80 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Water dosing is longer than TMA dosing.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TMA and Water steps are follower by purging steps. During purging, the unreacted precursors are being removed from the reaction chamber. This results in no deminishing mass changes, which results in plateaus in the graph.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 65 ng/cm².\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_10.jpg","caption":"FIG. 10. (Color online) Resistivity (at room temperature) of TiN films obtained at $100 - 400^{\\circ}\\mathrm{C}$ . The films were deposited by plasma-assisted ALD using $\\mathrm{TiCl}_4$ in combination with an $\\mathrm{H}_2 / \\mathrm{N}_2$ plasma. The resistivity was determined by in situ spectroscopic ellipsometry (thin films, $\\sim 10 \\mathrm{nm}$ ) and four-point probe measurements (thicker films, $>45 \\mathrm{nm}$ ) (Ref. 237). From S.B.S. Heil et al., J. Electrochem. Soc. 153, G956 (2006). Reproduced by permission of ECS—The Electrochemical Society.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_10","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_10","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":686,"height":528,"image_format":"jpeg","image_sha256":"e6c4b938d9f668ab070f2a3108cd731c67d6bc93d91b5488f8c684628ad7b133","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":686,"height":528}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates how resistivity decreases as deposition temperature increases. Measurements from spectroscopic ellipsometry (solid line) and 4-point probe (open circles) both show a consistent downward trend, indicating improved conductivity at higher deposition temperatures. Error bars represent experimental uncertainty for each temperature point.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition Temperature (°C) | Resistivity (µΩ·cm) | Measurement Method |\\n|-----------------------------|----------------------|----------------------------|\\n| 100 | 300 | Spectroscopic ellipsometry |\\n| 200 | 150 | Spectroscopic ellipsometry |\\n| 300 | 120 | Spectroscopic ellipsometry |\\n| 400 | 80 | Spectroscopic ellipsometry |\\n| 100 | 200 | 4-point probe |\\n| 400 | 70 | 4-point probe |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Resistivity (µΩ·cm).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Spectroscopic ellipsometry, 4-point probe\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Resistivity decreases steadily as deposition temperature rises, showing that higher temperatures improve the film’s conductivity due to better atomic ordering or reduced defects.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_11.jpg","caption":"FIG. 11. (Color online) Resistivity (at room temperature) of TaN films as a function of $\\mathrm{H}_2$ plasma exposure time (Ref. 223). The data were obtained by in situ spectroscopic ellipsometry and four-point probe measurements. Reprinted with permission from E. Langereis et al., J. Appl. Phys. 102, 083517 (2007). Copyright 2007, American Institute of Physics.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_11","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_11","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":681,"height":530,"image_format":"jpeg","image_sha256":"61db7ddfb4b08c316b7440a839817ea54f81f044a6a1e9cd4f40b1a26fd69fd8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":681,"height":530}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates how resistivity decreases sharply with increasing H₂ plasma exposure time. Both spectroscopic ellipsometry (triangles) and 4-point probe (circles) measurements show consistent results, with the resistivity dropping rapidly in the first few seconds before stabilizing at longer exposure times. The data demonstrate that extended H₂ plasma treatment improves conductivity by reducing film defects.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| H₂ Plasma Exposure Time (s) | Resistivity (µΩ·cm) | Measurement Method |\\n|-----------------------------|---------------------|----------------------------|\\n| 0 | 10000 | 4-point probe |\\n| 1 | 1000 | 4-point probe |\\n| 5 | 300 | Spectroscopic ellipsometry |\\n| 10 | 200 | Spectroscopic ellipsometry |\\n| 20 | 120 | Spectroscopic ellipsometry |\\n| 30 | 100 | Spectroscopic ellipsometry |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Resistivity (µΩ·cm)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Resistivity decreases rapidly with increasing plasma exposure time, dropping several orders of magnitude within the first few seconds and then stabilizing, indicating improved conductivity due to surface modification.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Spectroscopic ellipsometry, 4-point probe\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_20_fig_4.jpg","caption":"Fig. 4 Lithium content of the films, as measured by TOF-ERDA, as a function of number of subsequent lithium sub-cycles $n$ in the pulsing scheme of $400 \\times (1 \\times \\mathrm{TiO_2} + 3 \\times \\mathrm{La_2O_3} + n \\times \\mathrm{Li_2O})$ .","id":"test/atomic-layer-deposition/experimental-usecase/20/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/20/fig_4","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/Titta Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":477,"height":383,"image_format":"jpeg","image_sha256":"3f714365945734a41e1dc156e090b3eb98edf4078bbcc6add17a0fa5936b721e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":477,"height":383}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates a non-linear increase in lithium concentration (in at.%) as the number of LiOtBu + H2O sub-cycles increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of LiOtBu + H2O sub-cycles | Lithium concentration (at.%) |\\n|---|---|\\n| 0 | 0 |\\n| 1 | 19.67 |\\n| 3 | 21.06 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After the first sub-cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, it is not efficient. Based on the plot, the lithium concentration saturates after the first cycle. Adding more consecutive lithium pulses wastes time and precursor without significantly changing the film composition.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The curve would show a linear, steady increase in concentration.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_23_figure_1.jpg","caption":"Figure 1. (a) QCM data recorded during 40 cycles of $\\mathrm{Ga}_2\\mathrm{O}_3$ ALD using TMGa- $\\mathrm{O_3}$ at $350^{\\circ}C$ with the timing sequence $6 - 10 - 6 - 10$ b Expanded view of QCM data during 3 cycles of $\\mathrm{Ga}_2\\mathrm{O}_3$ ALD where the individual TMGa and $\\mathrm{O_3}$ exposures are indicated by the lower traces.","id":"test/atomic-layer-deposition/experimental-usecase/23/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/23/figure_1","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"process timing diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/David J. Comstock et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":967,"height":480,"image_format":"jpeg","image_sha256":"2adb3f7989356fca4a3bdd7dba34016165e28c049e70be4a4f47586a4649fd7f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":8,"width":473,"height":471},{"panel_id":"b","x":485,"y":6,"width":481,"height":474}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A line chart showing the mass increase over time with a constant rate of 31 ng/cm² per cycle.\"},{\"panel_id\":\"b\",\"text\":\"A line chart showing the mass change over time, focusing on the time range of 240 to 340 seconds, with Ozone and TMGa exposures marked.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass (ng/cm²) |\\n|---|---|\\n| 0 | 0 |\\n| 200 | 200 |\\n| 400 | 400 |\\n| 600 | 600 |\\n| 800 | 800 |\\n| 1000 | 1000 |\\n| 1200 | 1200 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Mass (ng/cm²) |\\n|---|---|\\n| 260 | 260 |\\n| 280 | 255 |\\n| 300 | 270 |\\n| 320 | 320 |\\n| 340 | 315 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"An increase of 31 ng/cm^2 per cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"350 °C.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 40 ng/cm^2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 10 ng/cm^2.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_23_figure_10.jpg","caption":"Figure 10. Optical transmittance measurements from $800\\mathrm{\\AA}Ga_{2}O_{3}$ film deposited onto both sides of a fused $\\mathrm{SiO}_2$ substrate.a) Transmittance of $\\mathrm{Ga}_2\\mathrm{O}_3$ referenced to a fused $\\mathrm{SiO}_2$ substrate background, and (b) determination of the optical bandgap of 4.95 $\\mathrm{eV}$ by fitting the optical absorption data.","id":"test/atomic-layer-deposition/experimental-usecase/23/figure_10","sample_id":"atomic-layer-deposition/experimental-usecase/23/figure_10","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/David J. Comstock et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":475,"height":725,"image_format":"jpeg","image_sha256":"f55f2c3fb8c224242b1a54823caefa5e91efec4fc127e089e084f76713c19410","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":15,"width":469,"height":354},{"panel_id":"b","x":2,"y":358,"width":470,"height":365}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the transmittance of Ga2O3 referenced to a fused SiO2 substrate background.\"},{\"panel_id\":\"b\",\"text\":\"Determination of the optical bandgap of 4.95 eV by fitting the optical absorption data.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | Transmittance |\\n|---|---|\\n| 250 | 0 |\\n| 300 | 100 |\\n| 500 | 75 | \\n| 1000 | 85 |\\n| 1500 | 90 |\\n| 2000 | 90 |\"},{\"panel_id\":\"b\",\"text\":\"| Energy (eV) | (αhν)^2 (ev/cm)^2 |\\n|---|---|\\n| 4 | 0 |\\n| 4.5 | 0 |\\n| 5 | 1 |\\n| 5.5 | 3 |\\n| 6 | 5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The films are highly transparent in the wavelength range of 300-2500 nm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 300 nm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 80%.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"4.95 eV.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_24_figure_9.jpg","caption":"Figure 9. Intensity of $\\mathrm{MeOH}$ during background cycles and process cycles at a pressure of $3\\times 10^{-3}$ mbar. MeOH is released during the precursor pulse and during the ozone pulse.","id":"test/atomic-layer-deposition/experimental-usecase/24/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/24/figure_9","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/Martin Rose et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":627,"height":481,"image_format":"jpeg","image_sha256":"72d792aafda0afbbfb5327374d624143aee5bbf386d7f9f7682ba3e708c1c87d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":626,"height":479}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows time-resolved mass spectrometry of methanol (MeOH, m/e = 31) during an ALD process using a metal precursor and ozone. Methanol is released during both half-cycles: small peaks during the precursor pulse indicate chemisorption via reactions with surface –OH groups, while larger peaks during the ozone pulse reflect oxidation and removal of remaining methoxy ligands. This dual release confirms that ligand elimination occurs in both steps, with ozone being the dominant cleanup mechanism.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (min) | Intensity (a.u.) | Condition / Action |\\n|-----------:|----------------:|---------------------------|\\n| 5 | 3.5 | Precursor Pulse (P) |\\n| 20 | 2.5 | Precursor Pulse (P) |\\n| 35 | 2.1 | Precursor Pulse (P) |\\n| 50 | 1.9 | Precursor Pulse (P) |\\n| 65 | 1.8 | Precursor Pulse (P) |\\n| 85 | 8.8 | Ozone Pulse (O₃) |\\n| 100 | 2.5 | Precursor Pulse (P) |\\n| 115 | 9.4 | Ozone Pulse (O₃) |\\n| 130 | 2.7 | Precursor Pulse (P) |\\n| 145 | 9.7 | Ozone Pulse (O₃) |\\n| 160 | 2.8 | Precursor Pulse (P) |\\n| 175 | 9.6 | Ozone Pulse (O₃) |\\n| 190 | 2.7 | Precursor Pulse (P) |\\n| 205 | 9.5 | Ozone Pulse (O₃) |\\n| 220 | 2.6 | Precursor Pulse (P) |\\n| 235 | 8.0 | Ozone Pulse (O₃) |\\n| 250 | 7.3 | Ozone Pulse (O₃) |\\n| 265 | 6.8 | Ozone Pulse (O₃) |\\n| 280 | 6.4 | Ozone Pulse (O₃) |\\n| 295 | 6.0 | Ozone Pulse (O₃) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The precursor pulse produces a methanol signal because the metal precursor reacts with surface hydroxyl groups (–OH) remaining from the previous step. This ligand-exchange reaction (for example, M–OMe + surface–OH → surface–O–M + MeOH) releases methanol immediately upon chemisorption, without requiring the subsequent oxidant pulse.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If all methanol were released during the precursor pulse, it would imply the precursor reacted completely with the surface (consuming all ligands) without needing a second step. This would effectively be a self-limiting adsorption but might lack the mechanism to regenerate -OH groups for the next cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The relatively small peak during the precursor step suggests that only a fraction of the ligands (e.g., 1 out of 4) are lost during the initial anchoring to the surface. The much larger peak during the ozone step confirms that the majority of the ligands are still attached to the metal center and are essentially \\\"burned off\\\" or displaced only when the strong oxidant is introduced.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The peaks show a noticeable decay tail. If the purge time is too short, residual methanol will remain in the chamber. Since methanol can re-adsorb or react with the precursors in the gas phase (CVD-like reaction), this would lead to Particle Formation (dust) or non-uniform film thickness across the wafer. It necessitates extended purge times, which reduces manufacturing throughput .\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_3_figure_10.jpg","caption":"Figure 10. QCM mass changes during two ALD cycles using saturating doses of the tetrakis(dimethylamido)zirconium precursor and water at $200^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-deposition/experimental-usecase/3/figure_10","sample_id":"atomic-layer-deposition/experimental-usecase/3/figure_10","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/Hausmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":534,"height":417,"image_format":"jpeg","image_sha256":"a794c7eb0862cafc9c68189bc40655c3762db6b66409eee1d4ab79af38403ec5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":534,"height":417}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the change in mass over time. Addition of metal precursors produces rapid net mass gain, adding water produces net mass loss.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (seconds) | Mass (micrograms) | Step |\\n|---|---|---|\\n| 0 | 0 | - |\\n| 4 | 0 | Start Metal doses |\\n| 8 | 0.053 | Start Water doses |\\n| 15 | 0 .037 | Start Metal doses |\\n| 19 | 0.089 | Start Water doses |\\n| 25 | 0.073 | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The graph demonstrates that the surface reactions are fast. This is supported by the nearly vertical lines visible at both the \\\"Metal Doses\\\" and \\\"Water Doses\\\" points. This indicates that the mass change upon precursor introduction is occurring more rapidly than the instrument's sampling time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ratio is bigger than one.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The flat horizontal plateaus after each dose confirm the process is self-limiting.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The net growth is the difference in mass between the baseline before the metal dose and the new baseline established after the water dose is complete. After the first full cycle, the mass change is approx. 0.037 micrograms. After the second full-cycle, it is appox. 0.036 micrograms.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_3_figure_11.jpg","caption":"Figure 11. QCM mass changes during one ALD cycle using undersaturating doses of the tetrakis(dimethylamido)zirconium precursor and water at $200^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-deposition/experimental-usecase/3/figure_11","sample_id":"atomic-layer-deposition/experimental-usecase/3/figure_11","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/Hausmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":536,"height":370,"image_format":"jpeg","image_sha256":"0c19323630a8c6f9b56eccfc4f572e5be011f5bbd4da9bf89d5fe2b11de34b21","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":536,"height":370}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the mass change over time, upon adding 12 doses of metal precursor and one dose of water, with a significant increase at around 40 seconds followed by a decrease after water addition.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (seconds) | Mass (micrograms) |\\n|---|---|\\n| 4.280 | 0.000 |\\n| 5.010 | 0.002 |\\n| 7.247 | 0.001 |\\n| 7.636 | 0.002 |\\n| 10.895 | 0.001 |\\n| 11.381 | 0.002 |\\n| 14.251 | 0.001 |\\n| 14.737 | 0.002 |\\n| 18.045 | 0.001 |\\n| 18.482 | 0.002 |\\n| 21.547 | 0.001 |\\n| 21.887 | 0.002 |\\n| 25.146 | 0.001 |\\n| 25.438 | 0.002 |\\n| 28.405 | 0.000 |\\n| 28.940 | 0.002 |\\n| 31.858 | 0.000 |\\n| 32.539 | 0.002 |\\n| 35.700 | 0.000 |\\n| 35.992 | 0.001 |\\n| 39.008 | 0.001 |\\n| 40.807 | 0.053 |\\n| 42.753 | 0.052 |\\n| 46.109 | 0.053 |\\n| 49.903 | 0.038 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After 11 metal doses.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"11th metal dose.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The surface reaction is self-limiting and the surface was already saturated by the previous dose.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process is net deposition. Although the water dose causes a slight mass decrease, the gain from the metal dose is significantly larger. The final mass after the complete cycle is higher than the starting mass, resulting in a permanent net mass increase.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_3_figure_8.jpg","caption":"Figure 8. Purge times required to achieve $0.096\\mathrm{-nm}$ per cycle thickness for zirconium oxide films $\\mathrm{0.093 - nm}$ for the hafnium oxide) at low deposition temperatures.","id":"test/atomic-layer-deposition/experimental-usecase/3/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/3/figure_8","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/Hausmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":464,"height":342,"image_format":"jpeg","image_sha256":"5cd47604cd422ec474db7ebed61ff179139cd756066cd62dff4345ca5115f7a1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":464,"height":342}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between purge time (in seconds) and thickness per cycle (in nanometers). As purge time increases, the thickness per cycle decreases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Purge Time (seconds) | Thickness per Cycle (nm) |\\n|---|---|\\n| 5 | 0.17 |\\n| 10 | 0.15 |\\n| 30 | 0.13 |\\n| 45 | 0.11 |\\n| 120 | 0.10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thickness at very short purge times is higher than at very high purge times. The difference arises because short purge times fail to remove excess precursor molecules. This leads to non-self-limiting growth and thicker films.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"High purge times are more effective in achieving controllable film growth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At approximately 100 - 120 s.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The larger error bars at short times indicate higher variability. At 120 seconds, the process is self-limiting, leading to consistent results with small error bars. At short purge times, the mechanism depends on the amount of unremoved precursor and therefore varies from run to run.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_39_fig_4.jpg","caption":"FIG. 4. (Color online) QCM measurements during plasma-assisted ALD of $\\mathrm{Al}_2\\mathrm{O}_3$ at a deposition temperature of $70^{\\circ}\\mathrm{C}$ . The mass gain is shown for ten reaction cycles with the length of one ALD cycle being indicated. The precursor dose is smaller than necessary for saturation of the surface reactions.","id":"test/atomic-layer-deposition/experimental-usecase/39/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/39/fig_4","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/Heil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":675,"height":547,"image_format":"jpeg","image_sha256":"c06cb4e2ccc6afa284a64cc9861649dc515bca19a6be8988eaa965d5747746b6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":547}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the change in QCM mass gain over time, showing a stepwise increase at regular intervals.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | QCM: Mass gain (Hz) |\\n|---|---|\\n| 0 | 0 |\\n| 100 | 10 |\\n| 200 | 18 |\\n| 300 | 25 |\\n| 400 | 32 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"70 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 seconds.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure illustrates how the mass of the growing film evolves during ten ALD cycles at a substrate temperature of 70 °C when a non-saturated aluminium precursor dose is used in each cycle. The quartz crystal microbalance data show a clear stepwise increase in mass, confirming that material is added incrementally during every ALD cycle. A transient negative mass change appears during each oxygen plasma step; however, this is attributed to a plasma-induced measurement artifact rather than actual material loss.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_61_figure_4.jpg","caption":"Figure 4. Time-resolved QMS signals for $m / z$ ratios 17 $\\mathrm{(NH_3^+)}$ 28 $\\mathrm{(N_2^+)}$ 27 $\\mathrm{(C_2H_3^+}$ $\\mathrm{HCN^{+}}$ 39 $\\mathrm{(C_3H_3^+}$ $\\mathrm{HCN^{+}}$ and 66 $\\mathrm{(C_5H_6^+)}$ , collected during the plasma subcycle for the (a) $\\mathrm{AB - NH_3}$ process, (b) $\\mathrm{AB - H_2 / N_2}$ process, and (c) $\\mathrm{ABC - N_2 - H_2}$ process. A normal ALD cycle and a reference cycle without the $\\mathrm{CoCp_2}$ precursor dosing were measured, with plasma ignition for 11 s during both cycles (indicated with an arrow in the panels for $m / z = 28$ ). The $\\mathrm{H}_2 / (\\mathrm{H}_2 + \\mathrm{N}_2)$ mixing ratio of the $\\mathrm{H}_2 / \\mathrm{N}_2$ plasma was $\\sim 0.77$","id":"test/atomic-layer-deposition/experimental-usecase/61/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/61/figure_4","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/Vos et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"61","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":1092,"height":755,"image_format":"jpeg","image_sha256":"165be5e57e8d6b94ba7f136165ff49c18a2f5870eaa50e4cd27d3478587d5e1d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":9,"width":283,"height":741},{"panel_id":"b","x":324,"y":9,"width":256,"height":743},{"panel_id":"c","x":606,"y":9,"width":486,"height":746}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents a comparison of ion current signals at specific mass-to-charge ratios (m/z) for three types of processes used in cobalt deposition: AB-NH₃, AB-H₂/N₂, and ABC-N₂-H₂. Each subfigure shows the evolution of key ions such as NH₃⁺ (m/z = 17), HCN⁺ (m/z = 27), and larger hydrocarbon fragments (e.g., m/z = 39, 52, 66) during plasma exposure and precursor pulsing. Signals are compared between conditions with and without the cobalt precursor (CoCp₂), allowing for assessment of how precursor chemistry and plasma composition influence ion generation and reaction pathways. The ABC process appears to produce sharper and more defined signals, suggesting more controlled surface reactions\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | m/z = 17 (NH₃⁺, AB-NH₃) | m/z = 27 (C₂H₃⁺) | m/z = 39 (C₃H₃⁺) |\\n|----------|--------------------------|------------------|------------------|\\n| 0 | 0.10 | 0.00 | 0.00 |\\n| 5 | 0.15 | 0.02 | 0.01 |\\n| 10 | 0.20 | 0.05 | 0.04 |\\n| 15 | 0.18 | 0.03 | 0.02 |\\n| 20 | 0.12 | 0.01 | 0.01 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The AB-NH₃ process exhibits sustained NH₃⁺ ion signals (m/z = 17) and weaker signals for hydrocarbon species. The AB-H₂/N₂ process shows moderate signals for NH₃⁺ and some fragmentation peaks (e.g., m/z = 27, HCN⁺), with lower overall intensity compared to the ABC process. In the ABC-N₂-H₂ process, ion current responses are sharper and more defined, especially for hydrocarbon fragments, indicating more abrupt gas-phase reactions and possibly better surface saturation. These differences reflect how plasma composition and step timing affect decomposition and desorption dynamics in each process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"AB-NH₃ shows a weak, broad signal, AB-H₂/N₂ yields a moderate peak, ABC-N₂-H₂ produces a strong, sharp peak\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The AB-NH₃ process.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_61_figure_6.jpg","caption":"Figure 6. Co content from XPS as a function of QMS ion current at $m / z = 17$ . The QMS ion current is a measure for the $\\mathrm{NH}_3$ production in the $\\mathrm{H}_2 / \\mathrm{N}_2$ plasma and was varied by changing the $\\mathrm{H}_2 / \\mathrm{N}_2$ mixing ratio of the source gas. The pressure of the $\\mathrm{H}_2 / \\mathrm{N}_2$ gas mixture was kept constant at $13\\mathrm{mTorr}$ . The Co content was determined using XPS on films obtained by performing $800\\mathrm{ALD}$ using the various $\\mathrm{H}_2 / \\mathrm{N}_2$ mixing ratios. XPS was carried out after sputtering with $\\mathrm{Ar^{+}}$ ions for $3\\mathrm{min}$ . The resistivity values of the Co films are indicated in the figure, in which the dashed line represents a linear fit through the data. It is noted that the decrease of the film resistivity as a function of $\\mathrm{NH}_x$ concentration might be related to the changes in the film structure, aside from the increased film purity.","id":"test/atomic-layer-deposition/experimental-usecase/61/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/61/figure_6","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/Vos et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"61","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":503,"height":425,"image_format":"jpeg","image_sha256":"4d14147ccdc56bcd4d4615d997afcdf9cfc5aae9aaf3e8cc6a6c1197706d7758","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":503,"height":424}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows how increasing ion current at m/z = 17 correlates with increasing cobalt content in atomic percent, with error bars indicating measurement uncertainty. As the ion current rises from 2 to 12 × 10⁻¹⁰ A, Co content increases from approximately 76.5% to 88%. Superimposed resistivity values show a dramatic drop from >10⁹ μΩ·cm to as low as 78 μΩ·cm, highlighting a strong correlation between plasma-generated NH₃ species (linked to m/z = 17) and improved film conductivity. The trend suggests that higher ion currents at this mass-to-charge ratio contribute to better cobalt incorporation and lower resistivity, revealing a potential control knob for tuning material performance in ALD or CVD processes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion current m/z = 17 (10⁻¹⁰ A) | Co content (at.%) | Resistivity (μΩ·cm) |\\n|-------------------------------|--------------------|----------------------|\\n| 2 | ~76.5 | >10⁹ |\\n| 4 | ~78.0 | 3.6×10⁸ |\\n| 6 | ~80.0 | 2.5×10³ |\\n| 8 | ~82.0 | 1.5×10³ |\\n| 10 | ~85.0 | 78 |\\n| 12 | ~88.0 | Not shown |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the ion current at m/z = 17 increases, the cobalt content in atomic percent also increases, indicating a positive correlation between plasma-generated NH₃ species and cobalt incorporation. This trend suggests that higher concentrations of reactive species in the plasma enhance the reduction and integration of cobalt into the film during deposition processes.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Higher Co content lowers resistivity, ion current tunes conductivity, plasma composition control improves deposition\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At an ion current of 10 × 10⁻¹⁰ A.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_62_fig_7.jpg","caption":"FIG. 7. (Color online) (a) Time-resolved emission intensity recorded at $777~\\mathrm{nm}$ related to atomic oxygen during plasma-assisted ALD of $\\mathrm{Al}_2\\mathrm{O}_3$ Failures of plasma ignition can be observed for the fourth and sixth ALD cycles. (b) Time-resolved emission intensities recorded during plasma-assisted ALD of TiN in which a $\\mathrm{H}_2 - \\mathrm{N}_2$ plasma is employed. The dashed line indicates the point at which the $\\mathrm{H}_2$ gas flow fails.","id":"test/atomic-layer-deposition/experimental-usecase/62/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/62/fig_7","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/Mackus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"62","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":614,"height":988,"image_format":"jpeg","image_sha256":"d3ef151ceb8928057ab3589b28c5dc36c3bf2fd6f6e3d55ae6e0911f5a3247db","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":608,"height":494},{"panel_id":"b","x":0,"y":479,"width":619,"height":511}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A line chart displaying intensity over time with consistent peaks at regular intervals.\"},{\"panel_id\":\"b\",\"text\":\"A multiple line chart showing intensity of two plasma species over time with distinct peaks.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Intensity (a.u.) |\\n|----------|------------------|\\n| 0 | 0 |\\n| 10 | ~175 |\\n| 20 | 0 |\\n| 30 | 0 |\\n| 40 | ~175 |\\n| 50 | ~175 |\\n| 60 | ~175 |\\n| 70 | ~175 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | H (656 nm) | N₂ (358 nm) |\\n|-----------|------------|-------------|\\n| 3000 | ~30000 | ~5000 |\\n| 3100 | ~30000 | ~5000 |\\n| 3200 | ~30000 | ~5000 |\\n| 3300 | ~30000 | ~8000 |\\n| 3400 | ~20000 | ~35000 |\\n| 3500 | ~12000 | ~40000 |\\n| 3600 | ~12000 | ~40000 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At these times the plasma is not on, this means that these cycles are not added up to the total amount of cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The plasma takes 5s.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 14 s.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"b\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_62_fig_8.jpg","caption":"FIG. 8. (Color online) (a) Evolution of the emission intensity at $656~\\mathrm{nm}$ related to atomic hydrogen recorded during plasma-assisted ALD of TiN without reactor wall conditioning prior to deposition. (b) Integrated emission intensities per cycle at $656~\\mathrm{nm}$ as a function of cycle number for plasma-assisted ALD of TiN in a reactor in which the reactor wall was conditioned by various procedures.","id":"test/atomic-layer-deposition/experimental-usecase/62/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/62/fig_8","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/Mackus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"62","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":631,"height":1014,"image_format":"jpeg","image_sha256":"ba84bf51a366b7bfe3d648e4960c6e4f1daa3f17e189ccfa02e4a4e9832d9579","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":631,"height":505},{"panel_id":"b","x":1,"y":512,"width":629,"height":503}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A line chart displaying intensity over time, showing a decreasing trend.\"},{\"panel_id\":\"b\",\"text\":\"A line chart showing the integrated 656 nm signal per cycle across different conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Intensity (a.u.) |\\n|---|---|\\n| 0 | 0 |\\n| 50 | 0 |\\n| 100 | 4x10^4 |\\n| 150 | 4x10^4 |\\n| 200 | 4x10^4 |\\n| 250 | 6x10^4 |\\n| 300 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Cycle number | Integrated 656 nm signal per cycle No cond.|Integrated 656 nm signal per cycle H2-N2 plasma|Integrated 656 nm signal per cycle H2 plasma|Integrated 656 nm signal per cycle TiCl4|\\n|---|---|---|---|---|\\n| 0 | 9x10^5 |5x10^5 |7x10^5 |6x10^5 |\\n| 20 | 8x10^5 |5x10^5 |5x10^5 |5x10^5 |\\n| 40 | 6x10^5 |5x10^5 |5x10^5 |4.5x10^5 |\\n| 60 | 6x10^5 |5x10^5 |5x10^5 |4.5x10^5 |\\n| 80 | 6x10^5 |5x10^5 |5x10^5 |4.5x10^5 |\\n| 100 | 5x10^5 |5x10^5 |5x10^5 |4.5x10^5 |\\n| 120 | 5x10^5 |5x10^5 |5x10^5 |4.5x10^5 |\\n| 140 | 5x10^5 |5x10^5 |5x10^5 |4.5x10^5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There does seem to be a startinf effect. The initial plasma pulses show higher intensities than the last pulses.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The best process is the one where the effect is only present in very little number of cycles. This would be the orange line.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After 140 cycles the decrease seems to saturate. This indicates that there are species in the plasma present that are not related to the ALD chemistry of the process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The saturation level is 500000.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG4_a.jpg","caption":"Capacitively coupled","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG4_a","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG4_a","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG4_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG4_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":614,"height":506,"image_format":"jpeg","image_sha256":"b155fda1d549675efd7e59508e501798c6f90bba13636448cbdd21c94695bf13","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":614,"height":506}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG6_a.jpg","caption":"FIG. 6. (a) Atomic O density vs $\\mathrm{O}_2$ flow fraction measured with OES. The y axis plotted on the same scale as other OES measurements for comparison. (b) Ion flux and plasma potential as a function of $\\mathrm{O}_2$ flow fraction.","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG6_a","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG6_a","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG6_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG6_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":645,"height":511,"image_format":"jpeg","image_sha256":"552f28acb4633c87705da7981885d053308f39576d902c21b4ae086b12fb23c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":645,"height":511}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows how atomic oxygen density varies as a function of O₂ flow fraction in the plasma. As the O₂ flow fraction increases from 0.0 to 0.3, the atomic oxygen density rises, reaching a maximum near 0.3. At higher O₂ flow fraction (0.5), the atomic oxygen density decreases slightly. This behaviour suggests an optimal oxygen fraction for generating atomic oxygen, beyond which recombination or dilution effects reduce the available atomic species\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| O₂ Flow Fraction | Atomic O density (atoms/m³) |\\n|------------------|----------------------------|\\n| 0.0 | ~1.8 × 10^19 |\\n| 0.1 | ~2.5 × 10^19 |\\n| 0.3 | ~3.0 × 10^19 |\\n| 0.5 | ~2.5 × 10^19 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Atomic oxygen density initially increases as the O₂ flow fraction rises from 0.0 to 0.3, indicating more efficient generation of atomic oxygen in this range. Beyond this point, increasing the O₂ flow fraction to 0.5 leads to a decrease in atomic oxygen density. This trend suggests that excessive oxygen may promote recombination or reduce plasma efficiency, resulting in fewer free atomic oxygen species.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ 0.3 O₂ flow fraction\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Maximizes atomic O availability, Improves efficiency, Avoids recombination, Enhances surface reaction control\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_13.jpg","caption":"Fig. 13. Growth rate as a function of V/III ratio at $1273\\mathrm{K}$ . Note that growth rate decreases as the amount of V-precursor for the reactor shown in Fig. 12.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_13","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_13","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_13.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":592,"height":383,"image_format":"jpeg","image_sha256":"0a4e85a0f67d092db3b2cd63066c862ff95ab385c4631003fece596a21dcbd4e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":5,"width":585,"height":379}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart represents the GaN growth rate versus V/III ratio at 1273 K for the stagnation-flow reactor used by Safvi et al. Unlike the diffusion-limited decrease observed in Figure 13, this configuration exhibits a steady linear increase in growth rate with higher V/III ratios. This indicates that in stagnation-flow reactors, added ammonia effectively enhances surface reaction kinetics without being limited by gas-phase diffusion.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| V/III | Growth Rate (µm/hr) |\\n|---|---|\\n| 35 | 0.58 |\\n| 70 | 0.59 |\\n| 142 | 0.54 |\\n| 214 | 0.45 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the ratio from 500 to 2000 increases the growth rate from approximately 1.35 μm/hr to about 1.65 μm/hr, corresponding to a ~22% increase. This indicates that supplying additional ammonia enhances the growth rate and confirms that the process is not limited by diffusion in this regime.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"a The diffusion-limited regime is preferable for large-area uniformity. Here, growth is controlled by mass transport, which can be made uniform with proper reactor design, leading to consistent thickness. The trade-off is that the absolute growth rate is lower and cannot be increased by raising temperature, potentially reducing throughput compared to a reaction-limited process optimized for speed.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The constant growth rate indicates the process has entered a diffusion-limited regime. At lower temperatures, growth is typically reaction-limited, where the rate increases exponentially with temperature. Above a certain temperature, the surface reaction becomes so fast that the rate is instead limited by the slower, weakly temperature-dependent physical transport of reactants through the gas boundary layer to the surface, resulting in the observed plateau.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"a The flat growth rate profile across a 180 K window demonstrates inherent robustness to temperature fluctuations. This means that minor hot or cold spots in a large reactor will not translate into significant thickness variations, leading to better wafer-scale uniformity and higher manufacturing yield without requiring prohibitively precise temperature control.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_14.jpg","caption":"Fig. 14. Growth rate as a function of V/III ratio at $1273\\mathrm{K}$ . Note that growth rate increases as the amount of V-precursor for the reactor shown in Fig. 7.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_14","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_14","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_14.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":664,"height":425,"image_format":"jpeg","image_sha256":"281edc0e514dd9bbd3fb1f602085634454bf862894675ceb7c2d2b89efd7da41","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":5,"width":661,"height":421}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This line chart represents shows a positive linear relationship between the V/III precursor ratio and the GaN growth rate at 1273 K in a specific reactor configuration. Higher ammonia (V) flow relative to the gallium (III) precursor leads to a faster growth rate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| V/III | Growth Rate (µm/hr) |\\n|---|---|\\n| 500 | 1.4 |\\n| 1000 | 1.48 |\\n| 1500 | 1.56 |\\n| 2000 | 1.63 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Doubling the ratio effectively supplies more nitrogen precursor to the surface. Since the trend is linear and positive, this adjustment will directly boost the deposition rate, requiring the engineer to increase the ammonia mass flow controller setpoint while keeping the TMG flow constant.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A reactor in a reaction-limited regime (like this one) is more challenging for large-wafer uniformity. Here, growth rate is highly sensitive to local temperature and precursor flux variations. A mass-transport-limited regime offers a natural plateau where growth rate is less sensitive to such local fluctuations, making it inherently better for thickness uniformity across a large area.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The linear increase indicates the growth is reaction-limited and governed by the surface concentration of active nitrogen. A higher V/III ratio delivers more ammonia, which decomposes to provide more NHₓ radicals at the surface. This directly increases the rate of the nitrogen-incorporation reaction, as Ga adatoms are abundant, making growth rate proportional to the nitrogen precursor flux.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This provides precise thickness control for critical nanoscale layers. By calibrating the linear V/III-to-growth-rate relationship, engineers can accurately deposit a barrier layer to an exact target thickness by controlling the ratio and growth time. This precision is essential for controlling the 2D electron gas density and threshold voltage in the HEMT.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_37_fig_1.jpg","caption":"Fig. 1. Proposed reaction portrait to illustrate ALD growth of alumina from TMA and $\\mathrm{H}_2\\mathrm{O}$ . The space is defined by chemical concentrations of surface intermediates: the $y$ axis is the surface coverage of $\\mathrm{CH}_3$ , adsorbed fragments of the TMA precursor, the $x$ axis gives the $\\mathrm{H}$ concentration, as $\\mathrm{OH}$ or $\\mathrm{H}_2\\mathrm{O}$ , resulting from the $\\mathrm{H}_2\\mathrm{O}$ precursor. The units are atoms per unit surface area. The TMA pulse and subsequent purge is indicated as a solid line, the $\\mathrm{H}_2\\mathrm{O}$ pulse and purge as a dotted line. The cycle as shown therefore represents the deposition of $1 / 2\\mathrm{Al}_2\\mathrm{O}_3$ and the evolution of $3\\mathrm{CH}_4$ (diagonal lines) per cell.","id":"test/atomic-layer-deposition/simulation-usecase/37/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/37/fig_1","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/Simon D. Elliott.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":483,"height":447,"image_format":"jpeg","image_sha256":"0d6d76d6cca0d495b22fc099c4e441357fc7545908588186d8f63653b4c0e0ed","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":483,"height":447}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a phase portrait representing the ALD growth of Al₂O₃ from TMA and H₂O. It plots the surface coverage of reactive intermediates, CH₃ (from TMA) on the y-axis and H (from H₂O) on the x-axis, over the course of a pulse–purge–pulse–purge cycle. Solid lines indicate the TMA pulse and purge, dotted lines indicate the H₂O pulse and purge, and diagonal lines represent CH₄ desorption. The portrait illustrates how the surface concentrations evolve during the cycle, returning to their initial values in a stoichiometric growth cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Surface CH₃ coverage (atoms/unit area) | Surface H coverage (atoms/unit area) |\\n|---|---|\\n| 0 | 0 |\\n| 0.5 | 0.5 |\\n| 1 | 1 |\\n| 1.5 | 1.5 |\\n| 2 | 2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the ALD cycle, the TMA pulse saturates the surface with CH₃ fragments, increasing the y-axis value, followed by a purge that maintains the surface coverage. The H₂O pulse then introduces H species, increasing the x-axis value, followed by a purge. Diagonal lines in the portrait represent the desorption of CH₄ as a by-product. A successful stoichiometric cycle returns the surface concentrations of both CH₃ and H to their starting values, indicating no accumulation of intermediates.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"CH₃ generally reaches higher surface coverage during the TMA pulse compared to H introduced by the H₂O pulse.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. If the surface concentrations of CH₃ and H do not return to their initial values at the end of the cycle, it indicates accumulation of intermediates and non-stoichiometric growth.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The height and width of the portrait correspond to the maximum surface coverages of CH₃ and H during the cycle, These dimensions are proportional to the net Al₂O₃ growth rate per cycle, A larger portrait indicates more precursor adsorption and greater film growth, while a smaller portrait suggests reduced surface reactions and slower growth\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_12_fig_3.jpg","caption":"FIG. 3. Film thickness, measured every five cycles, as a function of number of pulses or cycles performed on $\\mathrm{Al_2O_3}$ . (a) $\\mathrm{SF_6}$ plasma without a TMA dose representing half-cycle A. (b) TMA and $\\mathrm{SF_6}$ gas dosing without striking a plasma representing half-cycle B. (c) Full ALE cycles with alternating $\\mathrm{SF_6}$ plasma and TMA doses, confirming a linear relationship between the etch depth and the number of cycles. The inset shows a magnification of the transition between half-cycles A and B. Standard ALE recipe conditions are used for each step. The horizontal dashed lines indicate the initial film thickness before processing.","id":"test/atomic-layer-etching/experimental-usecase/12/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/12/fig_3","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":583,"height":447,"image_format":"jpeg","image_sha256":"da7670607a127e6b6d4f27f24f593d4b2e497c38ea95132fd0fd012a3b9083be","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":583,"height":447}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart represents the film thickness (Å), measured every five cycles, as a function of the number of pulses or cycles (0–110) performed on Al₂O₃. (a) 5 seconds SF₆ plasma without a TMA dose, representing half-cycle A. (b) 0.5 seconds TMA and SF₆ gas dosing without striking a plasma, representing half-cycle B. (c) Full ALE cycles with alternating SF₆ plasma and TMA doses, confirming a linear relationship between the etch depth and the number of cycles. The figure shows that the film thickness remains at approximately 200 Å up to cycle 60, followed by a linear decrease at an etch rate of 3.1 Å per cycle.\"},{\"panel_id\":\"b\",\"text\":\"The inset shows a magnified view of the transition between half-cycles A and B at 30 cycles, where a thickness change from 207 Å to 204 Å is observed. The horizontal dashed lines indicate the initial film thickness before processing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Film thikckness (Å) | Numer of pulses/cycles |\\n|---|---|\\n| 0 | 200 |\\n| 10 | 207 |\\n| 20 | 207 |\\n| 30 | 207 |\\n| 40 | 204 |\\n| 50 | 204 |\\n| 60 | 204 |\\n| 70 | 170 |\\n| 80 | 140 |\\n| 90 | 130 |\\n| 100 | 80 |\\n| 110 | 45 |\"},{\"panel_id\":\"b\",\"text\":\"| Film thikckness (Å) | Numer of pulses/cycles |\\n|---|---|\\n| 20 | 207 |\\n| 30 | 207 |\\n| 40 | 204 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After the half-cycle A, the film was exposed to a TMA dose, resulting in a decrease in thickness from 207 Å to 204 Å.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Between these data points actually one full ALE cycle has taken place. This is also the reason that the thickness difference is 3 angstroms.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In subfigure (c), the film thickness exhibits a continuous, linear decrease with a constant negative slope, characteristic of a controlled layer-by-layer etching process. In contrast, subfigures (a) and (b) show saturation behavior where the thickness stabilizes (plateaus) after an initial change. This comparison highlights that the linear removal of material is exclusive to the cyclic alternation of the two reactants.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Etch Per Cycle (EPC) is 3.1 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 30 cycles, there is a distinct step-change where the thickness drops from 207 Å to 204 Å (a reduction of 3 Å), marking the transition between the SF₆ plasma-only phase and the TMA/SF₆ gas phase.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Al2O3 is resistant to spontaneous etching by SF6 plasma, with etching observed only when alternating between SF6 plasma and TMA doses.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The exposure of Al2O3 to multiple SF6 plasma pulses without dosing TMA (half-cycle A) causes an initial 1A˚ increase in film thickness, which corresponds to the formation of a thin fluorinated surface layer. When subsequently exposing the substrate to TMA pulses (b), the thickness initially decreases by 3A˚ , and this is attributed to the removal of the modified AlF3 surface layer. After the initial 3A˚ of etching, the film thickness remains constant during further TMA doses, confirming that the TMA exposure is self-limiting.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"First, the substrates were exposed to 30 pulses of SF6 plasma (Half-cycle A), followed by 30 pulses of TMA (half-cycle B), and finally 50 ALE cycles (SF6 plasma + TMA dose).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The exposure to SF6 plasma, which is related to the formation of a thin fluorinated layer.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film thickness is decreasing with an etch rate of 3.1 Å per cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"By performing a linear fit in the last section of the graph and taking the slope.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Synergy is high if one of the two doses on there own do not etch. This seems the case so the synergy is high.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"12 nm, or 120 angstrom would require 39 cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The constant thickness indicates that fluorination alone does not cause spontaneous material removal. The fluorinated Al₂O₃ surface is chemically stable under these conditions and does not desorb volatile species by itself. This confirms that SF₆ plasma acts only as a surface activation step rather than an etching step.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"High thermal and chemical stability of the fluorinated surface.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The complete absence of thickness change during prolonged SF₆ plasma exposure proves that the fluorinated surface is highly stable against thermal decomposition and ion-induced damage. This thermal and chemical robustness means that no unintended etching or roughening occurs during the activation step, preserving atomic-scale smoothness. It is precisely this stable-yet-reactive fluorine-terminated surface that allows the subsequent TMA step to selectively and completely remove exactly one monolayer per cycle without over-etching.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The data in region (a) shows that exposure to SF₆ plasma alone results in a slight mass gain (thickness increase) due to surface fluorination but does not cause continuous etching. Similarly, region (b) shows that after the removal of the fluorinated layer, prolonged exposure to TMA does not result in further thickness loss. Together, these results demonstrate that neither reactant can spontaneously etch the bulk material on its own; etching only occurs through the synergistic, sequential application of both reactants.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thickness increase is attributed to the fluorination of the Al₂O₃ surface, forming a lower-density AlF₃ (or AlOₓFᵧ) layer, which involves a volume expansion compared to the original oxide.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Half-cycle A (0–30 cycles): Exposure to 5 seconds of SF₆ plasma without any TMA dose.\\n\\nHalf-cycle B (30–60 cycles): Dosing with 0.5 seconds of TMA and SF₆ gas without striking a plasma.\\n\\nFull ALE Cycle (60–110 cycles): Alternating exposures of SF₆ plasma and TMA doses.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the Half-cycles (A and B), the film thickness remains largely static (staying at approximately 200–207 Å), indicating that the individual components alone do not sustain etching. In contrast, the Full ALE cycles (c) exhibit a linear decrease in thickness, demonstrating that the combination of both steps is required to achieve a continuous etch rate (specifically 3.1 Å per cycle).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The image clearly shows a linear relationship between the etch depth and the number of cycles with a specific rate of 3.1 Å per cycle. This linearity implies that manufacturers can precisely calculate the total etch depth simply by counting cycles, which is ideal for high-precision semiconductor fabrication.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Alternating pulses of SF6 plasma and TMA show a linear dependence between the number of cycles and etch depth of the Al2O3 film (c).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 207 Å.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"30 for both.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At a rate of 3.1 Å per cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A key requirement for ALE is that etching should only occur if the substrate is exposed to alternating half-cycles, which is why this experiment was conducted. The figure shows that the SF6 half-cycles did not affect the film thickness. When the substrate was exposed to the TMA half-cycles, a decrease was expected for the first half-cycle as the AlF3 layer formed during SF6 exposure should react with TMA. This was indeed the case and the substrate thickness did not change during the remainder of the TMA half-cycles. The data shown in this figure demonstrate that the process conditions meet this key requirement.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The nearly unchanged thickness during both half-cycles indicates that neither the SF₆ plasma step nor the TMA step continues to etch (or grow) the film on its own once the surface reaction is complete. This is consistent with self-limited half-reactions. A non-self-limiting process would show a sustained thickness drift during a single half-cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thickness remains essentially unchanged during the isolated SF₆ half-step and the isolated TMA half-step, indicating little net removal from either reactant alone. When the steps are alternated in repeated full cycles, the thickness decreases steadily with cycle number and yields a consistent etch per cycle. This difference shows that net etching is driven by the combined, cyclic chemistry of the two steps (reactant synergy).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Etch rate is constant in the full ALE cycle region.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Right after cycle 30 (the transition into the TMA half-cycle).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Alternating SF₆ plasma exposure, TMA dosing, ALE cycles combining half-steps\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the individual half-cycles (SF₆ plasma or TMA exposure alone), the film thickness remains constant, indicating no net etching. In contrast, when the two steps are combined into a full ALE cycle, the film thickness decreases linearly with cycle number\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 3.1 Å per cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Alternating SF6 plasma and TMA doses (full ALE cycles) result in a linear decrease of film thickness with cycle number, at an etch rate of approximately 3.1 Å per cycle, which is more systematic than the isolated changes in half-cycle A or B.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SF6 plasma exposure creates a thin fluorinated surface layer (thickness increase), TMA dosing removes the fluorinated layer (thickness decrease), The self-limiting behavior of TMA indicates controlled surface reactions, The synergy of alternating cycles ensures consistent ALE etching\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE process is highly efficient, as indicated by the linear decrease in film thickness during alternating SF6 plasma and TMA cycles, yielding an etch rate of approximately 3.1 Å per cycle. The initial thickness changes during individual half-cycles demonstrate controlled surface reactions, with the SF6 plasma forming a fluorinated layer and TMA removing it. The calculated ALE synergy of 99.9% confirms that the process reliably etches Al2O3 with precise control over material removal.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. During SF6 plasma exposure (half-cycle A), the film thickness slightly increases due to the formation of a thin fluorinated surface layer. During TMA dosing (half-cycle B), the thickness decreases initially as the fluorinated layer is removed and then remains constant, confirming self-limiting behavior.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_13.jpg","caption":"Figure 13. AlN film thickness vs number of $\\mathrm{XeF}_2 / \\mathrm{BCl}_3 / \\mathrm{H}_2\\mathrm{O}$ cycles on single-crystal AlN film at $255^{\\circ}C$ . The measured AlN etch rate is $0.49\\mathrm{\\AA}$ cycle.","id":"test/atomic-layer-etching/experimental-usecase/20/figure_13","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_13","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_13.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":662,"height":558,"image_format":"jpeg","image_sha256":"719e70bea3fb7f6eed3ad38915a2072898017881971c6aa0e76b333fb1a72216","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":5,"width":657,"height":550}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the decrease in AlN thickness over different number of ALE cycles with XeF₂/BCl₃/H₂O etching at 255°C, with an etch rate of 0.49 Å/cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| XeF₂/BCl₃/H₂O Cycles | AIN Thickness (Å) |\\n|---|---|\\n| 0 | 2935 |\\n| 25 | 2923 |\\n| 50 | 2910 |\\n| 75 | 2900 |\\n| 100 | 2880 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"First, there is an XeF2 exposure, followed by BCl3 and H2O at 255 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of XeF2/BCl3/H2O cycles increases at 255 °C, the film thickness decreases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"An AlN thickness of 2900 Å can be achieved after 75 cycles.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.049 Å per cycle.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_6.jpg","caption":"Figure 6. AlN film thickness vs number of $\\mathrm{HF / BCl}_3$ cycles on single-crystal AlN film at $298^{\\circ}C$ using (a) viscous flow of $\\mathrm{BCl}_3$ precursor at $500~\\mathrm{mTorr}$ for $1\\mathrm{s}$ and (b) static exposure of $\\mathrm{BCl}_3$ precursor at $2.5$ Torr for $20~\\mathrm{s}$ . The HF exposure was at $100~\\mathrm{mTorr}$ for $1\\mathrm{s}$ .","id":"test/atomic-layer-etching/experimental-usecase/20/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_6","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":661,"height":481,"image_format":"jpeg","image_sha256":"fb967773566e142afe6270f3c3b48981f6cedd8b0342bb0bf64a38aa1bd7ed2c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":5,"width":659,"height":216},{"panel_id":"b","x":3,"y":225,"width":656,"height":255}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the thickness of AlN (Aluminum Nitride) over HF/BCl₃ cycles using a viscous flow of BCl3, with a gradual increase.\"},{\"panel_id\":\"b\",\"text\":\"The line chart shows the thickness of AlN (Aluminum Nitride) over HF/BCl₃ cycles with a static exposure of BCl3, which remains almost constant over the number of cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF/BCl₃ Cycle | AlN Thickness (Å) |\\n|---|---|\\n| 0 | 2827.5 |\\n| 10 | 2828.0 |\\n| 20 | 2828.5 |\\n| 30 | 2829.0 |\"},{\"panel_id\":\"b\",\"text\":\"| HF/BCl₃ Cycle | AlN Thickness (Å) |\\n|---|---|\\n| 0 | 2743.0 |\\n| 10 | 2742.5 |\\n| 20 | 2742.5 |\\n| 30 | 2743.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thickness of the AlN increases with an increase in the number of HF/BCl3 cycles under a viscous flow.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Two types of flow were studied: a viscous and static.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Static flow of BCl3.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in both subfigures, the changes in film thickness are small. For this reason, it can be concluded that no etching is achieved under these conditions.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_7.jpg","caption":"Figure 7. AlN film thickness vs number of $\\mathrm{XeF}_2 / \\mathrm{BCl}_3$ cycles on single-crystal AlN film. (a) Viscous flow at $298^{\\circ}C$ for $\\mathrm{BCl}_3$ at $500~\\mathrm{mTorr}$ for $1\\mathrm{s}$ and $\\mathrm{XeF}_2$ at $50~\\mathrm{mTorr}$ for $1\\mathrm{s}$ . (b) At $255^{\\circ}C$ , static exposure of $\\mathrm{BCl}_3$ at $2.5$ Torr for $20~\\mathrm{s}$ and viscous flow of $\\mathrm{XeF}_2$ at $50~\\mathrm{mTorr}$ for $1\\mathrm{s}$ .","id":"test/atomic-layer-etching/experimental-usecase/20/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_7","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":661,"height":478,"image_format":"jpeg","image_sha256":"22ce8eae3d3d58206547f57df62b0e5aa59f14008f22870efdab9acaab18675c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":4,"width":651,"height":133},{"panel_id":"b","x":3,"y":140,"width":656,"height":339}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A line chart showing the thickness of AlN versus the number of XeF2/BCl3 2 cycles at 298°C and under viscous flow.\"},{\"panel_id\":\"b\",\"text\":\"A line chart showing the decrease in AlN thickness at 255°C during BCl₃ static etching with an etch rate of 0.62 Å/cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| XeF₂/BCl₃ Cycles | AlN Thickness (Å) |\\n|---|---|\\n| 0 | 2911 |\\n| 10 | 2912 |\\n| 20 | 2912 |\\n| 30 | 2913 |\\n| 40 | 2914 |\"},{\"panel_id\":\"b\",\"text\":\"| XeF₂/BCl₃ Cycles | AlN Thickness (Å) |\\n|---|---|\\n| 0 | - |\\n| 100 | 2850 |\\n| 200 | 2810 |\\n| 300 | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of cycles increases, the thickness of the AlN shows a slight increase.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Viscous flow for both BCl3 and XeF2 at 298 °C, and static flow for BCl3 and viscous flow of XeF2 at 255 °C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Subfigure b shows the BCl3 static flow at 255 °C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A static flow of BCl3 and viscous flow of XeF2 at 255 °C are required to etch the surface.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_84ec0afa1681d61dad16457f11e33680c3ceb0560ff64acb7baa4f5a6cea16ef.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/25/84ec0afa1681d61dad16457f11e33680c3ceb0560ff64acb7baa4f5a6cea16ef","sample_id":"atomic-layer-etching/experimental-usecase/25/84ec0afa1681d61dad16457f11e33680c3ceb0560ff64acb7baa4f5a6cea16ef","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/84ec0afa1681d61dad16457f11e33680c3ceb0560ff64acb7baa4f5a6cea16ef.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/84ec0afa1681d61dad16457f11e33680c3ceb0560ff64acb7baa4f5a6cea16ef.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"not_found"},"width":658,"height":1114,"image_format":"jpeg","image_sha256":"24c051a3104aa52ebcb0c6be34020c79a62f5eb525915534aaeb9f6f75b83145","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":8,"width":650,"height":543},{"panel_id":"b","x":4,"y":560,"width":652,"height":549}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch rate of WO₃ increases with increasing BCl₃ exposure at a constant temperature and HF exposure, and saturates at 4 angstrom per cycle.\"},{\"panel_id\":\"b\",\"text\":\"The etch rate of WO₃ increases with increasing HF exposure at a constant temperature and BCl₃ exposure, and soft-saturates at 4.2 angstrom per cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| BCl₃ Exposure (mTorr s) | WO₃ Etch Rate (Å/cycle) |\\n|---|---|\\n| 0 | 0 |\\n| 200 | 3.7 |\\n| 300 | 4.2 |\\n| 500 | 4.1 |\"},{\"panel_id\":\"b\",\"text\":\"| HF Exposure (mTorr s) | WO₃ Etch Rate (Å/cycle) |\\n|---|---|\\n| 0 | 0 |\\n| 100 | 2.7 |\\n| 150 | 3.8 |\\n| 200 | 4.2 |\\n| 300 | 4.3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate would also 4 angstrom per cycle. This is the saturated value so further increasing the exposure would not result in a higher etch rate.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Usually an exponential function is used to fit the datapoints, where fit parameter in the exponent are related to dosing constants.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, there is no full saturation observed. The curve has not flattened fully.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"207 degrees celcius\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_31_fig_3.jpg","caption":"Fig. 3. (a) The progression in thickness as a function of the number of pulses or cycles for Hhfac-only pulses, consecutive Hhfac and $\\mathrm{O_2}$ gas pulses, and ALE cycles incorporating both Hhfac and O radical pulses. (b) Real-time QCM measurements during 12 cycles of repeated Hhfac and $\\mathrm{O_2}$ gas dosing, followed by 40 ALE cycles on $\\mathrm{HfO_2}$ at a substrate temperature of $300^{\\circ}\\mathrm{C}$ . The inset shows the magnified region from 1600 to $1700\\mathrm{~s~}$","id":"test/atomic-layer-etching/experimental-usecase/31/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/31/fig_3","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/Atomic layer etching of high-k oxide thin films.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":950,"height":1169,"image_format":"jpeg","image_sha256":"7be4a5c3fec51a05c4050bdb5844d34c307918a0f5c1c46f6b1a8eed2f7b9ef1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":33,"y":0,"width":912,"height":557},{"panel_id":"b","x":5,"y":619,"width":942,"height":545}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure illustrates the effects of different ALE processing conditions on film etching and mass loss. Panel (a) compares HfO₂, ZrO₂, and Al₂O₃ across three treatments: Hhfac only, Hhfac + O₂ gas, and Hhfac + O radicals. In the first two cases, film thickness remains constant over 50 cycles, indicating negligible etching. However, when O radicals are introduced, HfO₂ film thickness decreases steadily with each cycle, while ZrO₂ and Al₂O₃ remain unchanged—demonstrating material selectivity and process activation via radical chemistry. Panel (b) tracks the mass change during a similar ALE sequence at 300 °C, with a sharp mass decrease occurring only after the O radical step is introduced. The inset FTIR spectra confirm removal of Hhfac and reaction byproducts, supporting the proposed etch mechanism.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of process cycles | HfO₂ (nm) |\\n|--------------------------|-----------|\\n| 0 | 20 |\\n| 10 | 18 |\\n| 20 | 16 |\\n| 30 | 14 |\\n| 40 | 12 |\\n| 50 | 10 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of process cycles | HfO₂ (nm) |\\n|--------------------------|-----------|\\n| 0 | 20 |\\n| 10 | 18 |\\n| 20 | 16 |\\n| 30 | 14 |\\n| 40 | 12 |\\n| 50 | 10 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hhfac exposure, O₂ exposure, O radical introduction, Mass loss etching, FTIR byproduct detection.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Under the Hhfac only and Hhfac + O₂ gas conditions, the film thicknesses of HfO₂, ZrO₂, and Al₂O₃ remain constant, indicating that no etching occurs. However, when Hhfac is combined with O radicals, a steady decrease in HfO₂ film thickness is observed over multiple cycles, while ZrO₂ and Al₂O₃ remain unaffected. This trend suggests that O radicals are necessary to activate etching selectively in HfO₂, and the process is both material- and chemistry-dependent. The findings confirm that etch activation and selectivity are tunable through radical exposure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HfO₂.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_44_fig_1.jpg","caption":"FIG. 1. (Color online) Film thickness measured by spectroscopic ellipsometry vs number of AlN ALE reaction cycles at $275^{\\circ}C$ The etch rate increases after removing the $\\mathrm{AlO_xN_y}$ layer on the AlN film.","id":"test/atomic-layer-etching/experimental-usecase/44/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/44/fig_1","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/Thermal atomic layer etching of crystalline aluminum nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":639,"height":539,"image_format":"jpeg","image_sha256":"9e6057ee7ab88704be13324d3bef81ade7508c6d44f464e8f249e21f34b2a08e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":634,"height":533}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line plot shows the etched thickness of a sample versus the number of Atomic Layer Etching (ALE) cycles at 275°C. The etch process reveals two distinct regions: an initial slow-etch region attributed to a surface AlOₓNᵧ layer, and a subsequent faster-etch region attributed to pure AlN.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle Number | Thickness (Å) |\\n|-------|-------------|\\n| 0 | 491 |\\n| 100 | 479 |\\n| 200 | 472 |\\n| 301 | 460 |\\n| 400 | 435 |\\n| 500 | 400 |\\n| 600 | 355 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Surface AlOₓNᵧ (oxynitride) layer (Cycles 0-300).\\n\\nTransition region to purer AlN (Cycles ~300-400).\\n\\nBulk, pure AlN film (Cycles 400-600).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The AlOₓNᵧ region etches slowly (~0.07 Å/cycle), while pure AlN etches over 5x faster (~0.36 Å/cycle). This creates a significant trade-off: higher material purity (pure AlN) enables faster, more efficient etching, but the presence of even a thin, impure surface layer (AlOₓNᵧ) drastically reduces the effective etch rate and requires many cycles to clear, impacting process throughput.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The transition from an oxygen-containing surface layer (AlOₓNᵧ) to oxygen-free, pure AlN.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The \\\"knee\\\" marks the point where the inconsistent surface oxide is fully removed and etching of the target AlN begins. To achieve precise depth control, the process must first clear this variable surface layer. Therefore, the total etch cycle count must account for this non-productive \\\"overetch\\\" phase to ensure accurate etching into the pure AlN bulk.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_44_fig_3.jpg","caption":"FIG. 3. (Color online) Etch rate vs reactant exposure during AlN ALE at $275^{\\circ}C$ a Etch rate vs HF exposure with $\\mathrm{Sn(acac)}_2$ exposure fixed at 900 mTorr s and (b) etch rate vs $\\mathrm{Sn(acac)}_2$ exposure with HF exposure fixed at $1270\\mathrm{mTorr}$ s.","id":"test/atomic-layer-etching/experimental-usecase/44/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/44/fig_3","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/Thermal atomic layer etching of crystalline aluminum nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":636,"height":758,"image_format":"jpeg","image_sha256":"bd493fe1376d063fb1178ed06e964c4b29180b36e3e78d24797ba803b6752b7d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":631,"height":357},{"panel_id":"b","x":0,"y":367,"width":626,"height":387}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image represents the etch rate (Å/cycle) against the exposure (mTorr.s) Etch rate vs HF exposure with Sn(acac)₂ exposure fixed at 900 mTorr. s\"},{\"panel_id\":\"b\",\"text\":\"This image shows Atomic Layer Etching (ALE) saturation curves for a sequential, two-step Sn(acac)₂ / HF thermal etching process of a metal oxide (likely SnO₂). It demonstrates the self-limiting nature of ALE: each reactant exposure saturates, leading to a constant etch rate per cycle once a sufficient exposure dose is reached. Etch rate vs Sn(acac)₂ exposure with HF exposure fixed at 1270 mTorr. s.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Exposure (mTorr·s) | Etch Rate (Å/cycle) |\\n|---|---|\\n| 0 | 0.0 |\\n| 300 | 0.1 |\\n| 600 | 0.2 |\\n| 900 | 0.3 |\\n| 1200 | 0.35 |\\n| 1500 | 0.35 |\\n| 1800 | 0.4 |\"},{\"panel_id\":\"b\",\"text\":\"| Exposure (mTorr·s) | Etch Rate (Å/cycle) |\\n|---|---|\\n| 0 | 0.0 |\\n| 200 | 0.14 |\\n| 400 | 0.23 |\\n| 600 | 0.26 |\\n| 800 | 0.32 |\\n| 1000 | 0.35 |\\n| 1200 | 0.35 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"HF Pulse: Exposure ≥ ~966 mTorr·s to form a saturated AlF₃ layer.\\n\\nPurge: 130 s with N₂ to remove HF and by-products.\\n\\nSn(acac)₂ Pulse: Exposure ≥ ~900 mTorr·s for complete ligand exchange.\\n\\nPurge: 130 s with N₂ to remove Sn(acac)₂ and volatile etch products.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"HF saturates more sharply and shows a risk of Chemical Vapor Etching at high exposure, while Sn(acac)₂ saturates more gradually. This implies HF has a narrower safe process window; precise dose control is critical to avoid runaway etching. The trade-off is that HF's high reactivity enables fast surface fluorination, but demands stricter process control compared to the more forgiving Sn(acac)₂.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A saturated, monolayer-thick AlF₃ surface layer.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The saturation plateau represents a stable process window in which the etch rate remains constant and is unaffected by small changes in reactant dose or pressure. This natural self-limiting behavior enables uniform etching across the wafer and ensures excellent run-to-run repeatability, which is far more important for achieving high yield than a faster but poorly controlled etch process.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_4547e83349e7a9a1caf5fbbebd8da3978ec45a7a4a981e4142a90de337b8fc18.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/11/4547e83349e7a9a1caf5fbbebd8da3978ec45a7a4a981e4142a90de337b8fc18","sample_id":"atomic-layer-etching/simulation-usecase/11/4547e83349e7a9a1caf5fbbebd8da3978ec45a7a4a981e4142a90de337b8fc18","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/4547e83349e7a9a1caf5fbbebd8da3978ec45a7a4a981e4142a90de337b8fc18.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/4547e83349e7a9a1caf5fbbebd8da3978ec45a7a4a981e4142a90de337b8fc18.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"not_found"},"width":608,"height":1022,"image_format":"jpeg","image_sha256":"da6365720babd13569196b6c704148af4dbf8dbd48923b3be812180277fe59bb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":4,"width":603,"height":506},{"panel_id":"b","x":3,"y":514,"width":600,"height":504}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows simulated mass change during 3 complete thermal ALE cycles of Al2O3 at 573 K. Each cycle exhibits a characteristic step pattern: mass increases during HF exposure (Step A, fluorination) by approximately 13 ng/cm², followed by mass decrease during TMA exposure (Step B, etching) by approximately 29 ng/cm², with 30 s purge times between steps.\"},{\"panel_id\":\"b\",\"text\":\"Compares mass change profiles for 3 ALE cycles at three temperatures (543 K, 573 K, 593 K). Higher temperatures result in faster cycle completion, with the 593 K process finishing around 175 s versus approximately 225 s at 543 K, demonstrating the Arrhenius temperature dependence of reaction kinetics.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass change (ng/cm²) |\\n|---|---|\\n| 0 | 0 |\\n| 2 | 13 |\\n| 30 | 13 |\\n| 35 | -16 |\\n| 60 | -16 |\\n| 70 | -3 |\\n| 90 | -3 |\\n| 100 | -32 |\\n| 125 | -32 |\\n| 135 | -19 |\\n| 155 | -19 |\\n| 165 | -48 |\\n| 190 | -48 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | T = 543 K (ng/cm²) | T = 573 K (ng/cm²) | T = 593 K (ng/cm²) |\\n|---|---|---|---|\\n| 0 | 0 | 0 | 0 |\\n| 10 | 13 | 13 | 13 |\\n| 28 | 13 | 13 | 13 |\\n| 34 | 13 | -16 | -16 |\\n| 40 | -16 | -16 | -16 |\\n| 60 | -16 | -16 | -16 |\\n| 66 | -16 | -3 | -3 |\\n| 80 | -16 | -3 | -3 |\\n| 85 | -3 | -3 | -3 |\\n| 92 | -3 | -3 | -3 |\\n| 98 | -3 | -32 | -32 |\\n| 115 | -3 | -32 | -32 |\\n| 125 | -32 | -32 | -19 |\\n| 130 | -32 | -19 | -19 |\\n| 150 | -32 | -19 | -19 |\\n| 158 | -32 | -19 | -48 |\\n| 165 | -19 | -48 | -48 |\\n| 190 | -19 | -48 | -48 |\\n| 205 | -48 | - | - |\\n| 240 | -48 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Each ALE cycle consists of two sequential half-reactions with distinct mass changes. During Step A (HF exposure), fluorine atoms replace oxygen atoms on the Al2O3 surface, forming AlF3 while releasing water, resulting in a net mass increase of approximately 13 ng/cm² because fluorine is heavier than oxygen. During Step B (TMA exposure), trimethylaluminum reacts with the fluorinated surface through ligand exchange, producing volatile dimethylaluminum fluoride (DMAF) that desorbs, causing a mass decrease of approximately 29 ng/cm². The flat regions correspond to the 30 s purge periods.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The horizontal plateaus represent the 30 s purge periods where inert gas removes unreacted precursors and byproducts from the reactor before the next half-cycle begins.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mass change simulations provide critical parameters for process optimization without costly experiments. They reveal half-cycle times needed to achieve saturation at different operating conditions, enabling selection of temperature and pressure combinations that balance throughput with process quality. The data also validates whether the self-limiting behavior characteristic of ALE is achieved, as indicated by the flat plateaus. Additionally, the net mass loss per cycle can be correlated with etch per cycle measurements to verify the microscopic model accuracy.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher temperatures significantly reduce the total cycle time, with 3 cycles completing in approximately 175 s at 593 K compared to approximately 225 s at 543 K.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_538f430c664805721e436d2436803b1712d3747d91728885c13fa415252c98a7.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/11/538f430c664805721e436d2436803b1712d3747d91728885c13fa415252c98a7","sample_id":"atomic-layer-etching/simulation-usecase/11/538f430c664805721e436d2436803b1712d3747d91728885c13fa415252c98a7","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/538f430c664805721e436d2436803b1712d3747d91728885c13fa415252c98a7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/538f430c664805721e436d2436803b1712d3747d91728885c13fa415252c98a7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"not_found"},"width":586,"height":425,"image_format":"jpeg","image_sha256":"b52b6e0f9ffa02231d7717c6ad46ab79cd1861f6a81421f6ccd1dcf48e5f24bb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":5,"width":581,"height":422}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Convergence test for the kinetic energy cutoff (ecutwfc) parameter in DFT calculations for θ-Al2O3. The total energy decreases from approximately -2388 Ry at 20 Ry cutoff to about -2454 Ry, converging when ecutwfc reaches 50 Ry. This determines the minimum plane wave basis set size needed for accurate electronic structure calculations.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Kinetic energy cut-off (Ry) | Total energy (Ry) |\\n|---|---|\\n| 20 | -2390 |\\n| 25 | -2430 |\\n| 30 | -2450 |\\n| 35 | -2450 |\\n| 40 | -2450 |\\n| 45 | -2450 |\\n| 50 | -2450 |\\n| 55 | -2450 |\\n| 60 | -2450 |\\n| 65 | -2450 |\\n| 70 | -2450 |\\n| 75 | -2450 |\\n| 80 | -2450 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The kinetic energy cutoff (ecutwfc) determines how many plane waves are included in the basis set expansion of the electronic wavefunctions. A higher cutoff includes more plane waves, improving accuracy but increasing computational cost. The optimization finds the minimum cutoff value where the total energy is converged, balancing accuracy against efficiency. Using a value below convergence yields unreliable energies, while using excessively high values wastes computational resources without improving results.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The total energy difference is approximately 66 Ry, decreasing from about -2388 Ry at 20 Ry cutoff to about -2454 Ry at 50 Ry cutoff.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The x-axis represents the kinetic energy cutoff (ecutwfc) in Rydberg units, which controls the number of plane waves used in the DFT basis set.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A value of 50 Ry was selected because it is the point where total energy convergence is achieved, meaning further increases provide no significant improvement in accuracy.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_f29fb0936e8517e60638237bcc9fde1e5c001e80bfc85cf97feddcf84eb574c3.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/11/f29fb0936e8517e60638237bcc9fde1e5c001e80bfc85cf97feddcf84eb574c3","sample_id":"atomic-layer-etching/simulation-usecase/11/f29fb0936e8517e60638237bcc9fde1e5c001e80bfc85cf97feddcf84eb574c3","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/f29fb0936e8517e60638237bcc9fde1e5c001e80bfc85cf97feddcf84eb574c3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/f29fb0936e8517e60638237bcc9fde1e5c001e80bfc85cf97feddcf84eb574c3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"not_found"},"width":578,"height":394,"image_format":"jpeg","image_sha256":"a34587de75f1d637b6773a4e056e0b9467bafe9297effb84855ff40a846f5ff3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":7,"width":571,"height":388}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Convergence test for the kinetic energy cutoff for charge density and potential (ecutrho) in DFT calculations for θ-Al2O3 (2̄ 0 1). Unlike ecutwfc, the total energy increases (becomes less negative) with increasing ecutrho, rising from approximately -2454.038 Ry at 100 Ry to a converged value around -2454.006 Ry at ecutrho=200 Ry. This parameter controls the grid density for representing charge density and potentials.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Kinetic energy cut-off for charge density and potential (Ry) | Total energy (Ry) |\\n|---|---|\\n| 100 | -0.040 |\\n| 150 | -0.010 |\\n| 200 | -0.005 |\\n| 250 | -0.005 |\\n| 300 | -0.005 |\\n| 350 | -0.005 |\\n| 400 | -0.005 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The two parameters show opposite convergence trends. For ecutwfc, the total energy decreases (becomes more negative) with increasing cutoff values. For ecutrho, the total energy increases (becomes less negative) as the cutoff increases. Both parameters eventually reach convergence plateaus, but they approach their final values from opposite directions. This reflects their different roles in the calculation: ecutwfc controls wavefunction expansion while ecutrho controls charge density representation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ecutrho controls the kinetic energy cutoff for representing the charge density and potential on the real-space grid.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A value of 200 Ry was selected because the total energy no longer changes significantly beyond this point, indicating convergence.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In this study, ecutrho (200 Ry) is set to 4 times ecutwfc (50 Ry), which is a common ratio used for PAW pseudopotential calculations to ensure adequate charge density representation.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_fig_1.jpg","caption":"(c) The $k$ -point optimization of $\\theta -\\mathrm{Al}_2\\mathrm{O}_3$ (2 0 1). Fig. 1 - The total energy converges when ecutwfc is 50 (a), ecutrho is 200 (b), and the number of $k$ -points is 4 (c), respectively.","id":"test/atomic-layer-etching/simulation-usecase/11/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/11/fig_1","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":586,"height":425,"image_format":"jpeg","image_sha256":"df7d68a91522c9fd93e91498b85c4ca14ec7ced6cb079a792e0ed89cabd8de6c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":7,"width":572,"height":418}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Convergence test for the k-point grid density in DFT calculations for θ-Al2O3 (2̄ 0 1). The total energy decreases from approximately -2451 Ry at k-point=1 to about -2454.7 Ry, achieving convergence at k-point=4. This parameter determines the sampling density for Brillouin zone integration in the electronic structure calculations.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| K-point | Total energy (RY) |\\n|---|---|\\n| 1 | -2451.0 |\\n| 2 | -2454.5 |\\n| 3 | -2454.0 |\\n| 4 | -2454.0 |\\n| 5 | -2454.0 |\\n| 6 | -2454.0 |\\n| 7 | -2454.0 |\\n| 8 | -2454.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"K-points define the sampling grid for integrating electronic properties over the Brillouin zone in reciprocal space. Periodic DFT calculations require evaluating wavefunctions at multiple k-points to accurately compute total energies and other properties. Insufficient k-point sampling leads to inaccurate results, while excessive sampling increases computational cost without improving accuracy. The convergence test identifies the minimum k-point density that yields reliable results.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The total energy decreases by approximately 3.7 Ry, from about -2451 Ry at k-point=1 to approximately -2454.7 Ry at convergence.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Convergence is achieved at k-point=4, after which the total energy remains essentially constant.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"These parameters control different aspects of calculation accuracy: ecutwfc determines basis set completeness while k-points determine Brillouin zone sampling, so each must be independently optimized.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_fig_5.jpg","caption":"Fig. 5 - Film thickness with respect to number of cycles. It is assumed that the initial thickness is 100 Å. An etch thickness per cycle of 0.46 Å/cycle is applied.","id":"test/atomic-layer-etching/simulation-usecase/11/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/11/fig_5","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":611,"height":447,"image_format":"jpeg","image_sha256":"def13787f39744adad77ed3b35b3560d775b543490439eb20f2349f6fec870c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":6,"width":606,"height":440}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The thickness decreases linearly with increasing number of cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of cycle | Thickness (angstrom) |\\n|----------------|---------------------|\\n| 0 | 100 |\\n| 25 | 90 |\\n| 50 | 80 |\\n| 75 | 70 |\\n| 100 | 60 |\\n| 125 | 50 |\\n| 150 | 40 |\\n| 175 | 30 |\\n| 200 | 20 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The y-axis represents the Al2O3 film thickness measured in angstroms (Å).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The linear relationship reflects the self-limiting nature of the ALE process. Each cycle removes a consistent amount of material (0.46 Å) regardless of how many cycles have been performed, because the surface reactions saturate after complete monolayer conversion. This contrasts with continuous etching processes where the etch rate may vary with film thickness or process time. The linearity is a defining characteristic of ALE and enables precise, predictable thickness control.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 217 cycles would be needed to completely etch the 100 Å film (100 Å ÷ 0.46 Å/cycle ≈ 217 cycles).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch per cycle (EPC) value of 0.46 Å/cycle is taken from experimental measurements reported in the literature, as the kMC model itself does not directly compute EPC.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_21_figure_4.jpg","caption":"Figure 4. Data for (a) the Ta etch rate in $\\mathrm{Cl}_2$ plasma (i.e., Step A only) as a function of temperature, showing that etching is suppressed at $0^{\\circ}\\mathrm{C}$ . (b) Etch per cycle (ETC) as a function of ion energy for the Ta substrate at $0^{\\circ}\\mathrm{C}$ for ALE (in gray), averaged over 40 full ALE cycles, and for Ar sputter (i.e., Step B only) (in blue).","id":"test/atomic-layer-etching/simulation-usecase/21/figure_4","sample_id":"atomic-layer-etching/simulation-usecase/21/figure_4","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/Review Paper -- Atomic Layer Etching Rethinking the Art of Etch.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":539,"height":644,"image_format":"jpeg","image_sha256":"168e06982f9d9bd48181fbbd8b492b2b66ab94aaed4cbe74355cbb0efbf6f18c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":50,"y":7,"width":486,"height":308},{"panel_id":"b","x":47,"y":351,"width":492,"height":293}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Ta chemical etching in Cl₂ plasma (Step A only) is suppressed at 0 °C and increases with wafer temperature, reaching ~2 nm/s at 60 °C. This indicates strong thermal activation of the Step-A chemistry.\"},{\"panel_id\":\"b\",\"text\":\"At 0 °C, Ta ALE shows an ALE window with EPC near ~0.35–0.45 nm/cycle across roughly 20–90 eV, followed by a rise at higher energy. Ar-only sputtering increases steadily with ion energy and lacks a plateau, consistent with non-self-limiting removal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wafer temperature (°C) | Etch rate (nm/s) |\\n|---|---|\\n| 0 | ~0.00 |\\n| 10 | ~0.10 |\\n| 30 | ~0.50 |\\n| 60 | ~2.00 |\"},{\"panel_id\":\"b\",\"text\":\"| Ion energy (eV) | EPC in ALE mode (nm/cycle) | EPC in Ar-only mode (nm/cycle) |\\n|---|---|---|\\n| 0 | ~0.00 | ~0.00 |\\n| 20 | ~0.42 | ~0.00 |\\n| 40 | ~0.36 | ~0.02 |\\n| 60 | ~0.44 | ~0.06 |\\n| 90 | ~0.43 | ~0.25 |\\n| 115 | ~0.65 | ~0.40 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 0 °C the surface reaction pathway for chlorination/volatile product formation is kinetically inhibited, so net chemical etching is negligible.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 10 °C.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-EPC remains approximately constant (~0.35 nm/cycle) between ~20–80 eV.\\n-Increasing ion energy within this range does not increase removal.\\n-The Ar-only curve lacks a plateau, underscoring the chemical selectivity of ALE.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The stable EPC plateau in the ALE curve indicates self-limiting removal once the surface has been chemically modified, with ion energy serving only to trigger detachment. The monotonic increase in the Ar-only curve reflects purely physical sputtering, where removal scales continuously with energy. This contrast shows that ALE achieves controlled, low-damage removal by separating chemical preparation from physical activation.\"}]}]"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_2.jpg","caption":"Figure 2. QCM measurements for $\\mathrm{Al}_2\\mathrm{O}_3$ ALD at $58^{\\circ}C$ showing the linear growth of the $\\mathrm{Al}_2\\mathrm{O}_3$ ALD film over many reaction cycles. The average $\\mathrm{Al}_2\\mathrm{O}_3$ mass gain per ALD cycle is $30~\\mathrm{ng / cm^2}$ .","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_2","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows a linear increase in mass over time for the cycle sequence (1/ 20/ 2/ 30s) at 58 °C, starting at 0 ng/cm² at 0 seconds and reaching approximately 720 ng/cm² at 1000 seconds.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass (ng/cm²) |\\n|---|---|\\n| 0 | 0,00 |\\n| 7 | 21,78 |\\n| 15 | 34,85 |\\n| 42 | 31,95 |\\n| 46 | 53,73 |\\n| 56 | 53,73 |\\n| 58 | 65,35 |\\n| 86 | 61,00 |\\n| 89 | 81,33 |\\n| 98 | 82,78 |\\n| 100 | 97,30 |\\n| 133 | 92,95 |\\n| 132 | 119,09 |\\n| 140 | 117,63 |\\n| 144 | 127,80 |\\n| 175 | 121,99 |\\n| 175 | 148,13 |\\n| 182 | 145,23 |\\n| 187 | 155,39 |\\n| 215 | 152,49 |\\n| 218 | 174,27 |\\n| 226 | 177,18 |\\n| 228 | 191,70 |\\n| 258 | 184,44 |\\n| 260 | 201,87 |\\n| 273 | 206,22 |\\n| 273 | 219,29 |\\n| 301 | 209,13 |\\n| 302 | 230,91 |\\n| 313 | 233,82 |\\n| 315 | 246,89 |\\n| 345 | 238,17 |\\n| 346 | 264,32 |\\n| 355 | 265,77 |\\n| 359 | 278,84 |\\n| 387 | 270,12 |\\n| 389 | 293,36 |\\n| 398 | 294,81 |\\n| 405 | 306,43 |\\n| 433 | 302,07 |\\n| 431 | 322,41 |\\n| 445 | 328,22 |\\n| 445 | 339,83 |\\n| 475 | 331,12 |\\n| 476 | 355,81 |\\n| 486 | 357,26 |\\n| 487 | 367,43 |\\n| 519 | 363,07 |\\n| 519 | 381,95 |\\n| 529 | 384,85 |\\n| 531 | 396,47 |\\n| 559 | 389,21 |\\n| 562 | 416,80 |\\n| 573 | 421,16 |\\n| 573 | 421,16 |\\n| 604 | 419,71 |\\n| 604 | 445,85 |\\n| 614 | 445,85 |\\n| 616 | 456,02 |\\n| 647 | 453,11 |\\n| 648 | 474,90 |\\n| 659 | 474,90 |\\n| 660 | 486,51 |\\n| 691 | 482,16 |\\n| 694 | 502,49 |\\n| 705 | 517,01 |\\n| 735 | 517,01 |\\n| 735 | 537,34 |\\n| 746 | 537,34 |\\n| 748 | 547,51 |\\n| 778 | 544,61 |\\n| 775 | 564,94 |\\n| 792 | 576,56 |\\n| 820 | 573,65 |\\n| 822 | 593,98 |\\n| 834 | 604,15 |\\n| 861 | 601,24 |\\n| 866 | 627,39 |\\n| 879 | 639,00 |\\n| 908 | 636,10 |\\n| 908 | 652,07 |\\n| 920 | 665,15 |\\n| 949 | 663,69 |\\n| 951 | 684,02 |\\n| 962 | 697,10 |\\n| 992 | 700,00 |\\n| 998 | 717,43 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The process is net deposition.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film growth is linear.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The process shows stepwise growth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The rate of deposition is constant. This is visually evident from the graph, where the mass increases along a straight line. If the rate of deposition would increase, the trendline would be curving upward.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":589,"height":364}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":589,"height":364,"image_format":"jpeg","image_sha256":"bddee448af87923579afe43b35dc09cba825bdc0cbb20541d9c74dd4a256acbc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_3.jpg","caption":"Figure 3. Detailed view of the QCM measurements at $58^{\\circ}C$ . The shaded areas show the time periods during which the TMA and water dosing valves were open. The mass increases coincide with the TMA and water exposures.","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_3","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the mass (in ng/cm²) over time (in seconds), showing a stepwise increase during the TMA exposure and water exposure phases, followed by distinct plateaus.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass (ng/cm²) |\\n|---|---|\\n| 2 | 0,19 |\\n| 4 | 24,62 |\\n| 12 | 25,00 |\\n| 14 | 35,53 |\\n| 45 | 31,58 |\\n| 46 | 55,45 |\\n| 56 | 56,39 |\\n| 57 | 66,92 |\\n| 87 | 62,78 |\\n| 89 | 85,34 |\\n| 98 | 87,59 |\\n| 100 | 98,12 |\\n| 129 | 93,80 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Water dosing is longer than TMA dosing.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TMA and Water steps are follower by purging steps. During purging, the unreacted precursors are being removed from the reaction chamber. This results in no deminishing mass changes, which results in plateaus in the graph.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 65 ng/cm².\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":667,"height":448}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":667,"height":448,"image_format":"jpeg","image_sha256":"60a256c00607eeaedc9e2135b9f152c158242a203768a0171e101d12c0b43013","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_10.jpg","caption":"FIG. 10. (Color online) Resistivity (at room temperature) of TiN films obtained at $100 - 400^{\\circ}\\mathrm{C}$ . The films were deposited by plasma-assisted ALD using $\\mathrm{TiCl}_4$ in combination with an $\\mathrm{H}_2 / \\mathrm{N}_2$ plasma. The resistivity was determined by in situ spectroscopic ellipsometry (thin films, $\\sim 10 \\mathrm{nm}$ ) and four-point probe measurements (thicker films, $>45 \\mathrm{nm}$ ) (Ref. 237). From S.B.S. Heil et al., J. Electrochem. Soc. 153, G956 (2006). Reproduced by permission of ECS—The Electrochemical Society.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_10","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_10","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates how resistivity decreases as deposition temperature increases. Measurements from spectroscopic ellipsometry (solid line) and 4-point probe (open circles) both show a consistent downward trend, indicating improved conductivity at higher deposition temperatures. Error bars represent experimental uncertainty for each temperature point.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition Temperature (°C) | Resistivity (µΩ·cm) | Measurement Method |\\n|-----------------------------|----------------------|----------------------------|\\n| 100 | 300 | Spectroscopic ellipsometry |\\n| 200 | 150 | Spectroscopic ellipsometry |\\n| 300 | 120 | Spectroscopic ellipsometry |\\n| 400 | 80 | Spectroscopic ellipsometry |\\n| 100 | 200 | 4-point probe |\\n| 400 | 70 | 4-point probe |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Resistivity (µΩ·cm).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Spectroscopic ellipsometry, 4-point probe\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Resistivity decreases steadily as deposition temperature rises, showing that higher temperatures improve the film’s conductivity due to better atomic ordering or reduced defects.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":686,"height":528}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":686,"height":528,"image_format":"jpeg","image_sha256":"e6c4b938d9f668ab070f2a3108cd731c67d6bc93d91b5488f8c684628ad7b133","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_11.jpg","caption":"FIG. 11. (Color online) Resistivity (at room temperature) of TaN films as a function of $\\mathrm{H}_2$ plasma exposure time (Ref. 223). The data were obtained by in situ spectroscopic ellipsometry and four-point probe measurements. Reprinted with permission from E. Langereis et al., J. Appl. Phys. 102, 083517 (2007). Copyright 2007, American Institute of Physics.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_11","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_11","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates how resistivity decreases sharply with increasing H₂ plasma exposure time. Both spectroscopic ellipsometry (triangles) and 4-point probe (circles) measurements show consistent results, with the resistivity dropping rapidly in the first few seconds before stabilizing at longer exposure times. The data demonstrate that extended H₂ plasma treatment improves conductivity by reducing film defects.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| H₂ Plasma Exposure Time (s) | Resistivity (µΩ·cm) | Measurement Method |\\n|-----------------------------|---------------------|----------------------------|\\n| 0 | 10000 | 4-point probe |\\n| 1 | 1000 | 4-point probe |\\n| 5 | 300 | Spectroscopic ellipsometry |\\n| 10 | 200 | Spectroscopic ellipsometry |\\n| 20 | 120 | Spectroscopic ellipsometry |\\n| 30 | 100 | Spectroscopic ellipsometry |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Resistivity (µΩ·cm)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Resistivity decreases rapidly with increasing plasma exposure time, dropping several orders of magnitude within the first few seconds and then stabilizing, indicating improved conductivity due to surface modification.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Spectroscopic ellipsometry, 4-point probe\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":681,"height":530}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":681,"height":530,"image_format":"jpeg","image_sha256":"61db7ddfb4b08c316b7440a839817ea54f81f044a6a1e9cd4f40b1a26fd69fd8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_20_fig_4.jpg","caption":"Fig. 4 Lithium content of the films, as measured by TOF-ERDA, as a function of number of subsequent lithium sub-cycles $n$ in the pulsing scheme of $400 \\times (1 \\times \\mathrm{TiO_2} + 3 \\times \\mathrm{La_2O_3} + n \\times \\mathrm{Li_2O})$ .","id":"test/atomic-layer-deposition/experimental-usecase/20/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/20/fig_4","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates a non-linear increase in lithium concentration (in at.%) as the number of LiOtBu + H2O sub-cycles increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of LiOtBu + H2O sub-cycles | Lithium concentration (at.%) |\\n|---|---|\\n| 0 | 0 |\\n| 1 | 19.67 |\\n| 3 | 21.06 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After the first sub-cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, it is not efficient. Based on the plot, the lithium concentration saturates after the first cycle. Adding more consecutive lithium pulses wastes time and precursor without significantly changing the film composition.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The curve would show a linear, steady increase in concentration.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":477,"height":383}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/Titta Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":477,"height":383,"image_format":"jpeg","image_sha256":"3f714365945734a41e1dc156e090b3eb98edf4078bbcc6add17a0fa5936b721e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_23_figure_1.jpg","caption":"Figure 1. (a) QCM data recorded during 40 cycles of $\\mathrm{Ga}_2\\mathrm{O}_3$ ALD using TMGa- $\\mathrm{O_3}$ at $350^{\\circ}C$ with the timing sequence $6 - 10 - 6 - 10$ b Expanded view of QCM data during 3 cycles of $\\mathrm{Ga}_2\\mathrm{O}_3$ ALD where the individual TMGa and $\\mathrm{O_3}$ exposures are indicated by the lower traces.","id":"test/atomic-layer-deposition/experimental-usecase/23/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/23/figure_1","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"process timing diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A line chart showing the mass increase over time with a constant rate of 31 ng/cm² per cycle.\"},{\"panel_id\":\"b\",\"text\":\"A line chart showing the mass change over time, focusing on the time range of 240 to 340 seconds, with Ozone and TMGa exposures marked.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass (ng/cm²) |\\n|---|---|\\n| 0 | 0 |\\n| 200 | 200 |\\n| 400 | 400 |\\n| 600 | 600 |\\n| 800 | 800 |\\n| 1000 | 1000 |\\n| 1200 | 1200 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Mass (ng/cm²) |\\n|---|---|\\n| 260 | 260 |\\n| 280 | 255 |\\n| 300 | 270 |\\n| 320 | 320 |\\n| 340 | 315 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"An increase of 31 ng/cm^2 per cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"350 °C.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 40 ng/cm^2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 10 ng/cm^2.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":8,"width":473,"height":471},{"panel_id":"b","x":485,"y":6,"width":481,"height":474}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/David J. Comstock et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":967,"height":480,"image_format":"jpeg","image_sha256":"2adb3f7989356fca4a3bdd7dba34016165e28c049e70be4a4f47586a4649fd7f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_23_figure_10.jpg","caption":"Figure 10. Optical transmittance measurements from $800\\mathrm{\\AA}Ga_{2}O_{3}$ film deposited onto both sides of a fused $\\mathrm{SiO}_2$ substrate.a) Transmittance of $\\mathrm{Ga}_2\\mathrm{O}_3$ referenced to a fused $\\mathrm{SiO}_2$ substrate background, and (b) determination of the optical bandgap of 4.95 $\\mathrm{eV}$ by fitting the optical absorption data.","id":"test/atomic-layer-deposition/experimental-usecase/23/figure_10","sample_id":"atomic-layer-deposition/experimental-usecase/23/figure_10","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the transmittance of Ga2O3 referenced to a fused SiO2 substrate background.\"},{\"panel_id\":\"b\",\"text\":\"Determination of the optical bandgap of 4.95 eV by fitting the optical absorption data.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | Transmittance |\\n|---|---|\\n| 250 | 0 |\\n| 300 | 100 |\\n| 500 | 75 | \\n| 1000 | 85 |\\n| 1500 | 90 |\\n| 2000 | 90 |\"},{\"panel_id\":\"b\",\"text\":\"| Energy (eV) | (αhν)^2 (ev/cm)^2 |\\n|---|---|\\n| 4 | 0 |\\n| 4.5 | 0 |\\n| 5 | 1 |\\n| 5.5 | 3 |\\n| 6 | 5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The films are highly transparent in the wavelength range of 300-2500 nm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 300 nm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 80%.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"4.95 eV.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":15,"width":469,"height":354},{"panel_id":"b","x":2,"y":358,"width":470,"height":365}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/David J. Comstock et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":475,"height":725,"image_format":"jpeg","image_sha256":"f55f2c3fb8c224242b1a54823caefa5e91efec4fc127e089e084f76713c19410","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_24_figure_9.jpg","caption":"Figure 9. Intensity of $\\mathrm{MeOH}$ during background cycles and process cycles at a pressure of $3\\times 10^{-3}$ mbar. MeOH is released during the precursor pulse and during the ozone pulse.","id":"test/atomic-layer-deposition/experimental-usecase/24/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/24/figure_9","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows time-resolved mass spectrometry of methanol (MeOH, m/e = 31) during an ALD process using a metal precursor and ozone. Methanol is released during both half-cycles: small peaks during the precursor pulse indicate chemisorption via reactions with surface –OH groups, while larger peaks during the ozone pulse reflect oxidation and removal of remaining methoxy ligands. This dual release confirms that ligand elimination occurs in both steps, with ozone being the dominant cleanup mechanism.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (min) | Intensity (a.u.) | Condition / Action |\\n|-----------:|----------------:|---------------------------|\\n| 5 | 3.5 | Precursor Pulse (P) |\\n| 20 | 2.5 | Precursor Pulse (P) |\\n| 35 | 2.1 | Precursor Pulse (P) |\\n| 50 | 1.9 | Precursor Pulse (P) |\\n| 65 | 1.8 | Precursor Pulse (P) |\\n| 85 | 8.8 | Ozone Pulse (O₃) |\\n| 100 | 2.5 | Precursor Pulse (P) |\\n| 115 | 9.4 | Ozone Pulse (O₃) |\\n| 130 | 2.7 | Precursor Pulse (P) |\\n| 145 | 9.7 | Ozone Pulse (O₃) |\\n| 160 | 2.8 | Precursor Pulse (P) |\\n| 175 | 9.6 | Ozone Pulse (O₃) |\\n| 190 | 2.7 | Precursor Pulse (P) |\\n| 205 | 9.5 | Ozone Pulse (O₃) |\\n| 220 | 2.6 | Precursor Pulse (P) |\\n| 235 | 8.0 | Ozone Pulse (O₃) |\\n| 250 | 7.3 | Ozone Pulse (O₃) |\\n| 265 | 6.8 | Ozone Pulse (O₃) |\\n| 280 | 6.4 | Ozone Pulse (O₃) |\\n| 295 | 6.0 | Ozone Pulse (O₃) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The precursor pulse produces a methanol signal because the metal precursor reacts with surface hydroxyl groups (–OH) remaining from the previous step. This ligand-exchange reaction (for example, M–OMe + surface–OH → surface–O–M + MeOH) releases methanol immediately upon chemisorption, without requiring the subsequent oxidant pulse.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If all methanol were released during the precursor pulse, it would imply the precursor reacted completely with the surface (consuming all ligands) without needing a second step. This would effectively be a self-limiting adsorption but might lack the mechanism to regenerate -OH groups for the next cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The relatively small peak during the precursor step suggests that only a fraction of the ligands (e.g., 1 out of 4) are lost during the initial anchoring to the surface. The much larger peak during the ozone step confirms that the majority of the ligands are still attached to the metal center and are essentially \\\"burned off\\\" or displaced only when the strong oxidant is introduced.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The peaks show a noticeable decay tail. If the purge time is too short, residual methanol will remain in the chamber. Since methanol can re-adsorb or react with the precursors in the gas phase (CVD-like reaction), this would lead to Particle Formation (dust) or non-uniform film thickness across the wafer. It necessitates extended purge times, which reduces manufacturing throughput .\"}]}]","bbox":[{"panel_id":"a","x":1,"y":1,"width":626,"height":479}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/Martin Rose et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":627,"height":481,"image_format":"jpeg","image_sha256":"72d792aafda0afbbfb5327374d624143aee5bbf386d7f9f7682ba3e708c1c87d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_3_figure_10.jpg","caption":"Figure 10. QCM mass changes during two ALD cycles using saturating doses of the tetrakis(dimethylamido)zirconium precursor and water at $200^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-deposition/experimental-usecase/3/figure_10","sample_id":"atomic-layer-deposition/experimental-usecase/3/figure_10","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the change in mass over time. Addition of metal precursors produces rapid net mass gain, adding water produces net mass loss.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (seconds) | Mass (micrograms) | Step |\\n|---|---|---|\\n| 0 | 0 | - |\\n| 4 | 0 | Start Metal doses |\\n| 8 | 0.053 | Start Water doses |\\n| 15 | 0 .037 | Start Metal doses |\\n| 19 | 0.089 | Start Water doses |\\n| 25 | 0.073 | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The graph demonstrates that the surface reactions are fast. This is supported by the nearly vertical lines visible at both the \\\"Metal Doses\\\" and \\\"Water Doses\\\" points. This indicates that the mass change upon precursor introduction is occurring more rapidly than the instrument's sampling time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ratio is bigger than one.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The flat horizontal plateaus after each dose confirm the process is self-limiting.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The net growth is the difference in mass between the baseline before the metal dose and the new baseline established after the water dose is complete. After the first full cycle, the mass change is approx. 0.037 micrograms. After the second full-cycle, it is appox. 0.036 micrograms.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":534,"height":417}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/Hausmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":534,"height":417,"image_format":"jpeg","image_sha256":"a794c7eb0862cafc9c68189bc40655c3762db6b66409eee1d4ab79af38403ec5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_3_figure_11.jpg","caption":"Figure 11. QCM mass changes during one ALD cycle using undersaturating doses of the tetrakis(dimethylamido)zirconium precursor and water at $200^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-deposition/experimental-usecase/3/figure_11","sample_id":"atomic-layer-deposition/experimental-usecase/3/figure_11","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the mass change over time, upon adding 12 doses of metal precursor and one dose of water, with a significant increase at around 40 seconds followed by a decrease after water addition.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (seconds) | Mass (micrograms) |\\n|---|---|\\n| 4.280 | 0.000 |\\n| 5.010 | 0.002 |\\n| 7.247 | 0.001 |\\n| 7.636 | 0.002 |\\n| 10.895 | 0.001 |\\n| 11.381 | 0.002 |\\n| 14.251 | 0.001 |\\n| 14.737 | 0.002 |\\n| 18.045 | 0.001 |\\n| 18.482 | 0.002 |\\n| 21.547 | 0.001 |\\n| 21.887 | 0.002 |\\n| 25.146 | 0.001 |\\n| 25.438 | 0.002 |\\n| 28.405 | 0.000 |\\n| 28.940 | 0.002 |\\n| 31.858 | 0.000 |\\n| 32.539 | 0.002 |\\n| 35.700 | 0.000 |\\n| 35.992 | 0.001 |\\n| 39.008 | 0.001 |\\n| 40.807 | 0.053 |\\n| 42.753 | 0.052 |\\n| 46.109 | 0.053 |\\n| 49.903 | 0.038 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After 11 metal doses.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"11th metal dose.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The surface reaction is self-limiting and the surface was already saturated by the previous dose.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process is net deposition. Although the water dose causes a slight mass decrease, the gain from the metal dose is significantly larger. The final mass after the complete cycle is higher than the starting mass, resulting in a permanent net mass increase.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":536,"height":370}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/Hausmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":536,"height":370,"image_format":"jpeg","image_sha256":"0c19323630a8c6f9b56eccfc4f572e5be011f5bbd4da9bf89d5fe2b11de34b21","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_3_figure_8.jpg","caption":"Figure 8. Purge times required to achieve $0.096\\mathrm{-nm}$ per cycle thickness for zirconium oxide films $\\mathrm{0.093 - nm}$ for the hafnium oxide) at low deposition temperatures.","id":"test/atomic-layer-deposition/experimental-usecase/3/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/3/figure_8","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between purge time (in seconds) and thickness per cycle (in nanometers). As purge time increases, the thickness per cycle decreases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Purge Time (seconds) | Thickness per Cycle (nm) |\\n|---|---|\\n| 5 | 0.17 |\\n| 10 | 0.15 |\\n| 30 | 0.13 |\\n| 45 | 0.11 |\\n| 120 | 0.10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thickness at very short purge times is higher than at very high purge times. The difference arises because short purge times fail to remove excess precursor molecules. This leads to non-self-limiting growth and thicker films.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"High purge times are more effective in achieving controllable film growth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At approximately 100 - 120 s.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The larger error bars at short times indicate higher variability. At 120 seconds, the process is self-limiting, leading to consistent results with small error bars. At short purge times, the mechanism depends on the amount of unremoved precursor and therefore varies from run to run.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":464,"height":342}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/Hausmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":464,"height":342,"image_format":"jpeg","image_sha256":"5cd47604cd422ec474db7ebed61ff179139cd756066cd62dff4345ca5115f7a1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_39_fig_4.jpg","caption":"FIG. 4. (Color online) QCM measurements during plasma-assisted ALD of $\\mathrm{Al}_2\\mathrm{O}_3$ at a deposition temperature of $70^{\\circ}\\mathrm{C}$ . The mass gain is shown for ten reaction cycles with the length of one ALD cycle being indicated. The precursor dose is smaller than necessary for saturation of the surface reactions.","id":"test/atomic-layer-deposition/experimental-usecase/39/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/39/fig_4","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the change in QCM mass gain over time, showing a stepwise increase at regular intervals.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | QCM: Mass gain (Hz) |\\n|---|---|\\n| 0 | 0 |\\n| 100 | 10 |\\n| 200 | 18 |\\n| 300 | 25 |\\n| 400 | 32 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"70 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 seconds.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure illustrates how the mass of the growing film evolves during ten ALD cycles at a substrate temperature of 70 °C when a non-saturated aluminium precursor dose is used in each cycle. The quartz crystal microbalance data show a clear stepwise increase in mass, confirming that material is added incrementally during every ALD cycle. A transient negative mass change appears during each oxygen plasma step; however, this is attributed to a plasma-induced measurement artifact rather than actual material loss.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":547}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/Heil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":675,"height":547,"image_format":"jpeg","image_sha256":"c06cb4e2ccc6afa284a64cc9861649dc515bca19a6be8988eaa965d5747746b6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_61_figure_4.jpg","caption":"Figure 4. Time-resolved QMS signals for $m / z$ ratios 17 $\\mathrm{(NH_3^+)}$ 28 $\\mathrm{(N_2^+)}$ 27 $\\mathrm{(C_2H_3^+}$ $\\mathrm{HCN^{+}}$ 39 $\\mathrm{(C_3H_3^+}$ $\\mathrm{HCN^{+}}$ and 66 $\\mathrm{(C_5H_6^+)}$ , collected during the plasma subcycle for the (a) $\\mathrm{AB - NH_3}$ process, (b) $\\mathrm{AB - H_2 / N_2}$ process, and (c) $\\mathrm{ABC - N_2 - H_2}$ process. A normal ALD cycle and a reference cycle without the $\\mathrm{CoCp_2}$ precursor dosing were measured, with plasma ignition for 11 s during both cycles (indicated with an arrow in the panels for $m / z = 28$ ). The $\\mathrm{H}_2 / (\\mathrm{H}_2 + \\mathrm{N}_2)$ mixing ratio of the $\\mathrm{H}_2 / \\mathrm{N}_2$ plasma was $\\sim 0.77$","id":"test/atomic-layer-deposition/experimental-usecase/61/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/61/figure_4","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents a comparison of ion current signals at specific mass-to-charge ratios (m/z) for three types of processes used in cobalt deposition: AB-NH₃, AB-H₂/N₂, and ABC-N₂-H₂. Each subfigure shows the evolution of key ions such as NH₃⁺ (m/z = 17), HCN⁺ (m/z = 27), and larger hydrocarbon fragments (e.g., m/z = 39, 52, 66) during plasma exposure and precursor pulsing. Signals are compared between conditions with and without the cobalt precursor (CoCp₂), allowing for assessment of how precursor chemistry and plasma composition influence ion generation and reaction pathways. The ABC process appears to produce sharper and more defined signals, suggesting more controlled surface reactions\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | m/z = 17 (NH₃⁺, AB-NH₃) | m/z = 27 (C₂H₃⁺) | m/z = 39 (C₃H₃⁺) |\\n|----------|--------------------------|------------------|------------------|\\n| 0 | 0.10 | 0.00 | 0.00 |\\n| 5 | 0.15 | 0.02 | 0.01 |\\n| 10 | 0.20 | 0.05 | 0.04 |\\n| 15 | 0.18 | 0.03 | 0.02 |\\n| 20 | 0.12 | 0.01 | 0.01 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The AB-NH₃ process exhibits sustained NH₃⁺ ion signals (m/z = 17) and weaker signals for hydrocarbon species. The AB-H₂/N₂ process shows moderate signals for NH₃⁺ and some fragmentation peaks (e.g., m/z = 27, HCN⁺), with lower overall intensity compared to the ABC process. In the ABC-N₂-H₂ process, ion current responses are sharper and more defined, especially for hydrocarbon fragments, indicating more abrupt gas-phase reactions and possibly better surface saturation. These differences reflect how plasma composition and step timing affect decomposition and desorption dynamics in each process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"AB-NH₃ shows a weak, broad signal, AB-H₂/N₂ yields a moderate peak, ABC-N₂-H₂ produces a strong, sharp peak\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The AB-NH₃ process.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":10,"y":9,"width":283,"height":741},{"panel_id":"b","x":324,"y":9,"width":256,"height":743},{"panel_id":"c","x":606,"y":9,"width":486,"height":746}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/Vos et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"61","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":1092,"height":755,"image_format":"jpeg","image_sha256":"165be5e57e8d6b94ba7f136165ff49c18a2f5870eaa50e4cd27d3478587d5e1d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_61_figure_6.jpg","caption":"Figure 6. Co content from XPS as a function of QMS ion current at $m / z = 17$ . The QMS ion current is a measure for the $\\mathrm{NH}_3$ production in the $\\mathrm{H}_2 / \\mathrm{N}_2$ plasma and was varied by changing the $\\mathrm{H}_2 / \\mathrm{N}_2$ mixing ratio of the source gas. The pressure of the $\\mathrm{H}_2 / \\mathrm{N}_2$ gas mixture was kept constant at $13\\mathrm{mTorr}$ . The Co content was determined using XPS on films obtained by performing $800\\mathrm{ALD}$ using the various $\\mathrm{H}_2 / \\mathrm{N}_2$ mixing ratios. XPS was carried out after sputtering with $\\mathrm{Ar^{+}}$ ions for $3\\mathrm{min}$ . The resistivity values of the Co films are indicated in the figure, in which the dashed line represents a linear fit through the data. It is noted that the decrease of the film resistivity as a function of $\\mathrm{NH}_x$ concentration might be related to the changes in the film structure, aside from the increased film purity.","id":"test/atomic-layer-deposition/experimental-usecase/61/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/61/figure_6","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows how increasing ion current at m/z = 17 correlates with increasing cobalt content in atomic percent, with error bars indicating measurement uncertainty. As the ion current rises from 2 to 12 × 10⁻¹⁰ A, Co content increases from approximately 76.5% to 88%. Superimposed resistivity values show a dramatic drop from >10⁹ μΩ·cm to as low as 78 μΩ·cm, highlighting a strong correlation between plasma-generated NH₃ species (linked to m/z = 17) and improved film conductivity. The trend suggests that higher ion currents at this mass-to-charge ratio contribute to better cobalt incorporation and lower resistivity, revealing a potential control knob for tuning material performance in ALD or CVD processes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion current m/z = 17 (10⁻¹⁰ A) | Co content (at.%) | Resistivity (μΩ·cm) |\\n|-------------------------------|--------------------|----------------------|\\n| 2 | ~76.5 | >10⁹ |\\n| 4 | ~78.0 | 3.6×10⁸ |\\n| 6 | ~80.0 | 2.5×10³ |\\n| 8 | ~82.0 | 1.5×10³ |\\n| 10 | ~85.0 | 78 |\\n| 12 | ~88.0 | Not shown |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the ion current at m/z = 17 increases, the cobalt content in atomic percent also increases, indicating a positive correlation between plasma-generated NH₃ species and cobalt incorporation. This trend suggests that higher concentrations of reactive species in the plasma enhance the reduction and integration of cobalt into the film during deposition processes.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Higher Co content lowers resistivity, ion current tunes conductivity, plasma composition control improves deposition\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At an ion current of 10 × 10⁻¹⁰ A.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":503,"height":424}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/Vos et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"61","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":503,"height":425,"image_format":"jpeg","image_sha256":"4d14147ccdc56bcd4d4615d997afcdf9cfc5aae9aaf3e8cc6a6c1197706d7758","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_62_fig_7.jpg","caption":"FIG. 7. (Color online) (a) Time-resolved emission intensity recorded at $777~\\mathrm{nm}$ related to atomic oxygen during plasma-assisted ALD of $\\mathrm{Al}_2\\mathrm{O}_3$ Failures of plasma ignition can be observed for the fourth and sixth ALD cycles. (b) Time-resolved emission intensities recorded during plasma-assisted ALD of TiN in which a $\\mathrm{H}_2 - \\mathrm{N}_2$ plasma is employed. The dashed line indicates the point at which the $\\mathrm{H}_2$ gas flow fails.","id":"test/atomic-layer-deposition/experimental-usecase/62/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/62/fig_7","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A line chart displaying intensity over time with consistent peaks at regular intervals.\"},{\"panel_id\":\"b\",\"text\":\"A multiple line chart showing intensity of two plasma species over time with distinct peaks.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Intensity (a.u.) |\\n|----------|------------------|\\n| 0 | 0 |\\n| 10 | ~175 |\\n| 20 | 0 |\\n| 30 | 0 |\\n| 40 | ~175 |\\n| 50 | ~175 |\\n| 60 | ~175 |\\n| 70 | ~175 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | H (656 nm) | N₂ (358 nm) |\\n|-----------|------------|-------------|\\n| 3000 | ~30000 | ~5000 |\\n| 3100 | ~30000 | ~5000 |\\n| 3200 | ~30000 | ~5000 |\\n| 3300 | ~30000 | ~8000 |\\n| 3400 | ~20000 | ~35000 |\\n| 3500 | ~12000 | ~40000 |\\n| 3600 | ~12000 | ~40000 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At these times the plasma is not on, this means that these cycles are not added up to the total amount of cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The plasma takes 5s.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 14 s.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"b\"}]}]","bbox":[{"panel_id":"a","x":0,"y":1,"width":608,"height":494},{"panel_id":"b","x":0,"y":479,"width":619,"height":511}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/Mackus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"62","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":614,"height":988,"image_format":"jpeg","image_sha256":"d3ef151ceb8928057ab3589b28c5dc36c3bf2fd6f6e3d55ae6e0911f5a3247db","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_62_fig_8.jpg","caption":"FIG. 8. (Color online) (a) Evolution of the emission intensity at $656~\\mathrm{nm}$ related to atomic hydrogen recorded during plasma-assisted ALD of TiN without reactor wall conditioning prior to deposition. (b) Integrated emission intensities per cycle at $656~\\mathrm{nm}$ as a function of cycle number for plasma-assisted ALD of TiN in a reactor in which the reactor wall was conditioned by various procedures.","id":"test/atomic-layer-deposition/experimental-usecase/62/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/62/fig_8","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A line chart displaying intensity over time, showing a decreasing trend.\"},{\"panel_id\":\"b\",\"text\":\"A line chart showing the integrated 656 nm signal per cycle across different conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Intensity (a.u.) |\\n|---|---|\\n| 0 | 0 |\\n| 50 | 0 |\\n| 100 | 4x10^4 |\\n| 150 | 4x10^4 |\\n| 200 | 4x10^4 |\\n| 250 | 6x10^4 |\\n| 300 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Cycle number | Integrated 656 nm signal per cycle No cond.|Integrated 656 nm signal per cycle H2-N2 plasma|Integrated 656 nm signal per cycle H2 plasma|Integrated 656 nm signal per cycle TiCl4|\\n|---|---|---|---|---|\\n| 0 | 9x10^5 |5x10^5 |7x10^5 |6x10^5 |\\n| 20 | 8x10^5 |5x10^5 |5x10^5 |5x10^5 |\\n| 40 | 6x10^5 |5x10^5 |5x10^5 |4.5x10^5 |\\n| 60 | 6x10^5 |5x10^5 |5x10^5 |4.5x10^5 |\\n| 80 | 6x10^5 |5x10^5 |5x10^5 |4.5x10^5 |\\n| 100 | 5x10^5 |5x10^5 |5x10^5 |4.5x10^5 |\\n| 120 | 5x10^5 |5x10^5 |5x10^5 |4.5x10^5 |\\n| 140 | 5x10^5 |5x10^5 |5x10^5 |4.5x10^5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There does seem to be a startinf effect. The initial plasma pulses show higher intensities than the last pulses.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The best process is the one where the effect is only present in very little number of cycles. This would be the orange line.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After 140 cycles the decrease seems to saturate. This indicates that there are species in the plasma present that are not related to the ALD chemistry of the process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The saturation level is 500000.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":1,"width":631,"height":505},{"panel_id":"b","x":1,"y":512,"width":629,"height":503}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/Mackus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"62","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":631,"height":1014,"image_format":"jpeg","image_sha256":"ba84bf51a366b7bfe3d648e4960c6e4f1daa3f17e189ccfa02e4a4e9832d9579","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG4_a.jpg","caption":"Capacitively coupled","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG4_a","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG4_a","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":614,"height":506}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG4_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG4_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":614,"height":506,"image_format":"jpeg","image_sha256":"b155fda1d549675efd7e59508e501798c6f90bba13636448cbdd21c94695bf13","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG6_a.jpg","caption":"FIG. 6. (a) Atomic O density vs $\\mathrm{O}_2$ flow fraction measured with OES. The y axis plotted on the same scale as other OES measurements for comparison. (b) Ion flux and plasma potential as a function of $\\mathrm{O}_2$ flow fraction.","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG6_a","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG6_a","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows how atomic oxygen density varies as a function of O₂ flow fraction in the plasma. As the O₂ flow fraction increases from 0.0 to 0.3, the atomic oxygen density rises, reaching a maximum near 0.3. At higher O₂ flow fraction (0.5), the atomic oxygen density decreases slightly. This behaviour suggests an optimal oxygen fraction for generating atomic oxygen, beyond which recombination or dilution effects reduce the available atomic species\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| O₂ Flow Fraction | Atomic O density (atoms/m³) |\\n|------------------|----------------------------|\\n| 0.0 | ~1.8 × 10^19 |\\n| 0.1 | ~2.5 × 10^19 |\\n| 0.3 | ~3.0 × 10^19 |\\n| 0.5 | ~2.5 × 10^19 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Atomic oxygen density initially increases as the O₂ flow fraction rises from 0.0 to 0.3, indicating more efficient generation of atomic oxygen in this range. Beyond this point, increasing the O₂ flow fraction to 0.5 leads to a decrease in atomic oxygen density. This trend suggests that excessive oxygen may promote recombination or reduce plasma efficiency, resulting in fewer free atomic oxygen species.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ 0.3 O₂ flow fraction\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Maximizes atomic O availability, Improves efficiency, Avoids recombination, Enhances surface reaction control\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":645,"height":511}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG6_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG6_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":645,"height":511,"image_format":"jpeg","image_sha256":"552f28acb4633c87705da7981885d053308f39576d902c21b4ae086b12fb23c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_13.jpg","caption":"Fig. 13. Growth rate as a function of V/III ratio at $1273\\mathrm{K}$ . Note that growth rate decreases as the amount of V-precursor for the reactor shown in Fig. 12.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_13","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_13","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart represents the GaN growth rate versus V/III ratio at 1273 K for the stagnation-flow reactor used by Safvi et al. Unlike the diffusion-limited decrease observed in Figure 13, this configuration exhibits a steady linear increase in growth rate with higher V/III ratios. This indicates that in stagnation-flow reactors, added ammonia effectively enhances surface reaction kinetics without being limited by gas-phase diffusion.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| V/III | Growth Rate (µm/hr) |\\n|---|---|\\n| 35 | 0.58 |\\n| 70 | 0.59 |\\n| 142 | 0.54 |\\n| 214 | 0.45 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the ratio from 500 to 2000 increases the growth rate from approximately 1.35 μm/hr to about 1.65 μm/hr, corresponding to a ~22% increase. This indicates that supplying additional ammonia enhances the growth rate and confirms that the process is not limited by diffusion in this regime.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"a The diffusion-limited regime is preferable for large-area uniformity. Here, growth is controlled by mass transport, which can be made uniform with proper reactor design, leading to consistent thickness. The trade-off is that the absolute growth rate is lower and cannot be increased by raising temperature, potentially reducing throughput compared to a reaction-limited process optimized for speed.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The constant growth rate indicates the process has entered a diffusion-limited regime. At lower temperatures, growth is typically reaction-limited, where the rate increases exponentially with temperature. Above a certain temperature, the surface reaction becomes so fast that the rate is instead limited by the slower, weakly temperature-dependent physical transport of reactants through the gas boundary layer to the surface, resulting in the observed plateau.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"a The flat growth rate profile across a 180 K window demonstrates inherent robustness to temperature fluctuations. This means that minor hot or cold spots in a large reactor will not translate into significant thickness variations, leading to better wafer-scale uniformity and higher manufacturing yield without requiring prohibitively precise temperature control.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":5,"width":585,"height":379}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_13.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":592,"height":383,"image_format":"jpeg","image_sha256":"0a4e85a0f67d092db3b2cd63066c862ff95ab385c4631003fece596a21dcbd4e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_14.jpg","caption":"Fig. 14. Growth rate as a function of V/III ratio at $1273\\mathrm{K}$ . Note that growth rate increases as the amount of V-precursor for the reactor shown in Fig. 7.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_14","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_14","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This line chart represents shows a positive linear relationship between the V/III precursor ratio and the GaN growth rate at 1273 K in a specific reactor configuration. Higher ammonia (V) flow relative to the gallium (III) precursor leads to a faster growth rate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| V/III | Growth Rate (µm/hr) |\\n|---|---|\\n| 500 | 1.4 |\\n| 1000 | 1.48 |\\n| 1500 | 1.56 |\\n| 2000 | 1.63 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Doubling the ratio effectively supplies more nitrogen precursor to the surface. Since the trend is linear and positive, this adjustment will directly boost the deposition rate, requiring the engineer to increase the ammonia mass flow controller setpoint while keeping the TMG flow constant.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A reactor in a reaction-limited regime (like this one) is more challenging for large-wafer uniformity. Here, growth rate is highly sensitive to local temperature and precursor flux variations. A mass-transport-limited regime offers a natural plateau where growth rate is less sensitive to such local fluctuations, making it inherently better for thickness uniformity across a large area.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The linear increase indicates the growth is reaction-limited and governed by the surface concentration of active nitrogen. A higher V/III ratio delivers more ammonia, which decomposes to provide more NHₓ radicals at the surface. This directly increases the rate of the nitrogen-incorporation reaction, as Ga adatoms are abundant, making growth rate proportional to the nitrogen precursor flux.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This provides precise thickness control for critical nanoscale layers. By calibrating the linear V/III-to-growth-rate relationship, engineers can accurately deposit a barrier layer to an exact target thickness by controlling the ratio and growth time. This precision is essential for controlling the 2D electron gas density and threshold voltage in the HEMT.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":5,"width":661,"height":421}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_14.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":664,"height":425,"image_format":"jpeg","image_sha256":"281edc0e514dd9bbd3fb1f602085634454bf862894675ceb7c2d2b89efd7da41","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_37_fig_1.jpg","caption":"Fig. 1. Proposed reaction portrait to illustrate ALD growth of alumina from TMA and $\\mathrm{H}_2\\mathrm{O}$ . The space is defined by chemical concentrations of surface intermediates: the $y$ axis is the surface coverage of $\\mathrm{CH}_3$ , adsorbed fragments of the TMA precursor, the $x$ axis gives the $\\mathrm{H}$ concentration, as $\\mathrm{OH}$ or $\\mathrm{H}_2\\mathrm{O}$ , resulting from the $\\mathrm{H}_2\\mathrm{O}$ precursor. The units are atoms per unit surface area. The TMA pulse and subsequent purge is indicated as a solid line, the $\\mathrm{H}_2\\mathrm{O}$ pulse and purge as a dotted line. The cycle as shown therefore represents the deposition of $1 / 2\\mathrm{Al}_2\\mathrm{O}_3$ and the evolution of $3\\mathrm{CH}_4$ (diagonal lines) per cell.","id":"test/atomic-layer-deposition/simulation-usecase/37/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/37/fig_1","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a phase portrait representing the ALD growth of Al₂O₃ from TMA and H₂O. It plots the surface coverage of reactive intermediates, CH₃ (from TMA) on the y-axis and H (from H₂O) on the x-axis, over the course of a pulse–purge–pulse–purge cycle. Solid lines indicate the TMA pulse and purge, dotted lines indicate the H₂O pulse and purge, and diagonal lines represent CH₄ desorption. The portrait illustrates how the surface concentrations evolve during the cycle, returning to their initial values in a stoichiometric growth cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Surface CH₃ coverage (atoms/unit area) | Surface H coverage (atoms/unit area) |\\n|---|---|\\n| 0 | 0 |\\n| 0.5 | 0.5 |\\n| 1 | 1 |\\n| 1.5 | 1.5 |\\n| 2 | 2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the ALD cycle, the TMA pulse saturates the surface with CH₃ fragments, increasing the y-axis value, followed by a purge that maintains the surface coverage. The H₂O pulse then introduces H species, increasing the x-axis value, followed by a purge. Diagonal lines in the portrait represent the desorption of CH₄ as a by-product. A successful stoichiometric cycle returns the surface concentrations of both CH₃ and H to their starting values, indicating no accumulation of intermediates.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"CH₃ generally reaches higher surface coverage during the TMA pulse compared to H introduced by the H₂O pulse.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. If the surface concentrations of CH₃ and H do not return to their initial values at the end of the cycle, it indicates accumulation of intermediates and non-stoichiometric growth.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The height and width of the portrait correspond to the maximum surface coverages of CH₃ and H during the cycle, These dimensions are proportional to the net Al₂O₃ growth rate per cycle, A larger portrait indicates more precursor adsorption and greater film growth, while a smaller portrait suggests reduced surface reactions and slower growth\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":483,"height":447}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/Simon D. Elliott.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":483,"height":447,"image_format":"jpeg","image_sha256":"0d6d76d6cca0d495b22fc099c4e441357fc7545908588186d8f63653b4c0e0ed","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_12_fig_3.jpg","caption":"FIG. 3. Film thickness, measured every five cycles, as a function of number of pulses or cycles performed on $\\mathrm{Al_2O_3}$ . (a) $\\mathrm{SF_6}$ plasma without a TMA dose representing half-cycle A. (b) TMA and $\\mathrm{SF_6}$ gas dosing without striking a plasma representing half-cycle B. (c) Full ALE cycles with alternating $\\mathrm{SF_6}$ plasma and TMA doses, confirming a linear relationship between the etch depth and the number of cycles. The inset shows a magnification of the transition between half-cycles A and B. Standard ALE recipe conditions are used for each step. The horizontal dashed lines indicate the initial film thickness before processing.","id":"test/atomic-layer-etching/experimental-usecase/12/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/12/fig_3","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart represents the film thickness (Å), measured every five cycles, as a function of the number of pulses or cycles (0–110) performed on Al₂O₃. (a) 5 seconds SF₆ plasma without a TMA dose, representing half-cycle A. (b) 0.5 seconds TMA and SF₆ gas dosing without striking a plasma, representing half-cycle B. (c) Full ALE cycles with alternating SF₆ plasma and TMA doses, confirming a linear relationship between the etch depth and the number of cycles. The figure shows that the film thickness remains at approximately 200 Å up to cycle 60, followed by a linear decrease at an etch rate of 3.1 Å per cycle.\"},{\"panel_id\":\"b\",\"text\":\"The inset shows a magnified view of the transition between half-cycles A and B at 30 cycles, where a thickness change from 207 Å to 204 Å is observed. The horizontal dashed lines indicate the initial film thickness before processing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Film thikckness (Å) | Numer of pulses/cycles |\\n|---|---|\\n| 0 | 200 |\\n| 10 | 207 |\\n| 20 | 207 |\\n| 30 | 207 |\\n| 40 | 204 |\\n| 50 | 204 |\\n| 60 | 204 |\\n| 70 | 170 |\\n| 80 | 140 |\\n| 90 | 130 |\\n| 100 | 80 |\\n| 110 | 45 |\"},{\"panel_id\":\"b\",\"text\":\"| Film thikckness (Å) | Numer of pulses/cycles |\\n|---|---|\\n| 20 | 207 |\\n| 30 | 207 |\\n| 40 | 204 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After the half-cycle A, the film was exposed to a TMA dose, resulting in a decrease in thickness from 207 Å to 204 Å.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Between these data points actually one full ALE cycle has taken place. This is also the reason that the thickness difference is 3 angstroms.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In subfigure (c), the film thickness exhibits a continuous, linear decrease with a constant negative slope, characteristic of a controlled layer-by-layer etching process. In contrast, subfigures (a) and (b) show saturation behavior where the thickness stabilizes (plateaus) after an initial change. This comparison highlights that the linear removal of material is exclusive to the cyclic alternation of the two reactants.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Etch Per Cycle (EPC) is 3.1 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 30 cycles, there is a distinct step-change where the thickness drops from 207 Å to 204 Å (a reduction of 3 Å), marking the transition between the SF₆ plasma-only phase and the TMA/SF₆ gas phase.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Al2O3 is resistant to spontaneous etching by SF6 plasma, with etching observed only when alternating between SF6 plasma and TMA doses.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The exposure of Al2O3 to multiple SF6 plasma pulses without dosing TMA (half-cycle A) causes an initial 1A˚ increase in film thickness, which corresponds to the formation of a thin fluorinated surface layer. When subsequently exposing the substrate to TMA pulses (b), the thickness initially decreases by 3A˚ , and this is attributed to the removal of the modified AlF3 surface layer. After the initial 3A˚ of etching, the film thickness remains constant during further TMA doses, confirming that the TMA exposure is self-limiting.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"First, the substrates were exposed to 30 pulses of SF6 plasma (Half-cycle A), followed by 30 pulses of TMA (half-cycle B), and finally 50 ALE cycles (SF6 plasma + TMA dose).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The exposure to SF6 plasma, which is related to the formation of a thin fluorinated layer.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film thickness is decreasing with an etch rate of 3.1 Å per cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"By performing a linear fit in the last section of the graph and taking the slope.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Synergy is high if one of the two doses on there own do not etch. This seems the case so the synergy is high.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"12 nm, or 120 angstrom would require 39 cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The constant thickness indicates that fluorination alone does not cause spontaneous material removal. The fluorinated Al₂O₃ surface is chemically stable under these conditions and does not desorb volatile species by itself. This confirms that SF₆ plasma acts only as a surface activation step rather than an etching step.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"High thermal and chemical stability of the fluorinated surface.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The complete absence of thickness change during prolonged SF₆ plasma exposure proves that the fluorinated surface is highly stable against thermal decomposition and ion-induced damage. This thermal and chemical robustness means that no unintended etching or roughening occurs during the activation step, preserving atomic-scale smoothness. It is precisely this stable-yet-reactive fluorine-terminated surface that allows the subsequent TMA step to selectively and completely remove exactly one monolayer per cycle without over-etching.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The data in region (a) shows that exposure to SF₆ plasma alone results in a slight mass gain (thickness increase) due to surface fluorination but does not cause continuous etching. Similarly, region (b) shows that after the removal of the fluorinated layer, prolonged exposure to TMA does not result in further thickness loss. Together, these results demonstrate that neither reactant can spontaneously etch the bulk material on its own; etching only occurs through the synergistic, sequential application of both reactants.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thickness increase is attributed to the fluorination of the Al₂O₃ surface, forming a lower-density AlF₃ (or AlOₓFᵧ) layer, which involves a volume expansion compared to the original oxide.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Half-cycle A (0–30 cycles): Exposure to 5 seconds of SF₆ plasma without any TMA dose.\\n\\nHalf-cycle B (30–60 cycles): Dosing with 0.5 seconds of TMA and SF₆ gas without striking a plasma.\\n\\nFull ALE Cycle (60–110 cycles): Alternating exposures of SF₆ plasma and TMA doses.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the Half-cycles (A and B), the film thickness remains largely static (staying at approximately 200–207 Å), indicating that the individual components alone do not sustain etching. In contrast, the Full ALE cycles (c) exhibit a linear decrease in thickness, demonstrating that the combination of both steps is required to achieve a continuous etch rate (specifically 3.1 Å per cycle).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The image clearly shows a linear relationship between the etch depth and the number of cycles with a specific rate of 3.1 Å per cycle. This linearity implies that manufacturers can precisely calculate the total etch depth simply by counting cycles, which is ideal for high-precision semiconductor fabrication.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Alternating pulses of SF6 plasma and TMA show a linear dependence between the number of cycles and etch depth of the Al2O3 film (c).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 207 Å.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"30 for both.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At a rate of 3.1 Å per cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A key requirement for ALE is that etching should only occur if the substrate is exposed to alternating half-cycles, which is why this experiment was conducted. The figure shows that the SF6 half-cycles did not affect the film thickness. When the substrate was exposed to the TMA half-cycles, a decrease was expected for the first half-cycle as the AlF3 layer formed during SF6 exposure should react with TMA. This was indeed the case and the substrate thickness did not change during the remainder of the TMA half-cycles. The data shown in this figure demonstrate that the process conditions meet this key requirement.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The nearly unchanged thickness during both half-cycles indicates that neither the SF₆ plasma step nor the TMA step continues to etch (or grow) the film on its own once the surface reaction is complete. This is consistent with self-limited half-reactions. A non-self-limiting process would show a sustained thickness drift during a single half-cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thickness remains essentially unchanged during the isolated SF₆ half-step and the isolated TMA half-step, indicating little net removal from either reactant alone. When the steps are alternated in repeated full cycles, the thickness decreases steadily with cycle number and yields a consistent etch per cycle. This difference shows that net etching is driven by the combined, cyclic chemistry of the two steps (reactant synergy).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Etch rate is constant in the full ALE cycle region.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Right after cycle 30 (the transition into the TMA half-cycle).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Alternating SF₆ plasma exposure, TMA dosing, ALE cycles combining half-steps\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the individual half-cycles (SF₆ plasma or TMA exposure alone), the film thickness remains constant, indicating no net etching. In contrast, when the two steps are combined into a full ALE cycle, the film thickness decreases linearly with cycle number\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 3.1 Å per cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Alternating SF6 plasma and TMA doses (full ALE cycles) result in a linear decrease of film thickness with cycle number, at an etch rate of approximately 3.1 Å per cycle, which is more systematic than the isolated changes in half-cycle A or B.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SF6 plasma exposure creates a thin fluorinated surface layer (thickness increase), TMA dosing removes the fluorinated layer (thickness decrease), The self-limiting behavior of TMA indicates controlled surface reactions, The synergy of alternating cycles ensures consistent ALE etching\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE process is highly efficient, as indicated by the linear decrease in film thickness during alternating SF6 plasma and TMA cycles, yielding an etch rate of approximately 3.1 Å per cycle. The initial thickness changes during individual half-cycles demonstrate controlled surface reactions, with the SF6 plasma forming a fluorinated layer and TMA removing it. The calculated ALE synergy of 99.9% confirms that the process reliably etches Al2O3 with precise control over material removal.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. During SF6 plasma exposure (half-cycle A), the film thickness slightly increases due to the formation of a thin fluorinated surface layer. During TMA dosing (half-cycle B), the thickness decreases initially as the fluorinated layer is removed and then remains constant, confirming self-limiting behavior.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":583,"height":447}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":583,"height":447,"image_format":"jpeg","image_sha256":"da7670607a127e6b6d4f27f24f593d4b2e497c38ea95132fd0fd012a3b9083be","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_13.jpg","caption":"Figure 13. AlN film thickness vs number of $\\mathrm{XeF}_2 / \\mathrm{BCl}_3 / \\mathrm{H}_2\\mathrm{O}$ cycles on single-crystal AlN film at $255^{\\circ}C$ . The measured AlN etch rate is $0.49\\mathrm{\\AA}$ cycle.","id":"test/atomic-layer-etching/experimental-usecase/20/figure_13","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_13","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the decrease in AlN thickness over different number of ALE cycles with XeF₂/BCl₃/H₂O etching at 255°C, with an etch rate of 0.49 Å/cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| XeF₂/BCl₃/H₂O Cycles | AIN Thickness (Å) |\\n|---|---|\\n| 0 | 2935 |\\n| 25 | 2923 |\\n| 50 | 2910 |\\n| 75 | 2900 |\\n| 100 | 2880 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"First, there is an XeF2 exposure, followed by BCl3 and H2O at 255 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of XeF2/BCl3/H2O cycles increases at 255 °C, the film thickness decreases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"An AlN thickness of 2900 Å can be achieved after 75 cycles.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.049 Å per cycle.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":5,"width":657,"height":550}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_13.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":662,"height":558,"image_format":"jpeg","image_sha256":"719e70bea3fb7f6eed3ad38915a2072898017881971c6aa0e76b333fb1a72216","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_6.jpg","caption":"Figure 6. AlN film thickness vs number of $\\mathrm{HF / BCl}_3$ cycles on single-crystal AlN film at $298^{\\circ}C$ using (a) viscous flow of $\\mathrm{BCl}_3$ precursor at $500~\\mathrm{mTorr}$ for $1\\mathrm{s}$ and (b) static exposure of $\\mathrm{BCl}_3$ precursor at $2.5$ Torr for $20~\\mathrm{s}$ . The HF exposure was at $100~\\mathrm{mTorr}$ for $1\\mathrm{s}$ .","id":"test/atomic-layer-etching/experimental-usecase/20/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_6","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the thickness of AlN (Aluminum Nitride) over HF/BCl₃ cycles using a viscous flow of BCl3, with a gradual increase.\"},{\"panel_id\":\"b\",\"text\":\"The line chart shows the thickness of AlN (Aluminum Nitride) over HF/BCl₃ cycles with a static exposure of BCl3, which remains almost constant over the number of cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF/BCl₃ Cycle | AlN Thickness (Å) |\\n|---|---|\\n| 0 | 2827.5 |\\n| 10 | 2828.0 |\\n| 20 | 2828.5 |\\n| 30 | 2829.0 |\"},{\"panel_id\":\"b\",\"text\":\"| HF/BCl₃ Cycle | AlN Thickness (Å) |\\n|---|---|\\n| 0 | 2743.0 |\\n| 10 | 2742.5 |\\n| 20 | 2742.5 |\\n| 30 | 2743.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thickness of the AlN increases with an increase in the number of HF/BCl3 cycles under a viscous flow.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Two types of flow were studied: a viscous and static.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Static flow of BCl3.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in both subfigures, the changes in film thickness are small. For this reason, it can be concluded that no etching is achieved under these conditions.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":5,"width":659,"height":216},{"panel_id":"b","x":3,"y":225,"width":656,"height":255}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":661,"height":481,"image_format":"jpeg","image_sha256":"fb967773566e142afe6270f3c3b48981f6cedd8b0342bb0bf64a38aa1bd7ed2c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_7.jpg","caption":"Figure 7. AlN film thickness vs number of $\\mathrm{XeF}_2 / \\mathrm{BCl}_3$ cycles on single-crystal AlN film. (a) Viscous flow at $298^{\\circ}C$ for $\\mathrm{BCl}_3$ at $500~\\mathrm{mTorr}$ for $1\\mathrm{s}$ and $\\mathrm{XeF}_2$ at $50~\\mathrm{mTorr}$ for $1\\mathrm{s}$ . (b) At $255^{\\circ}C$ , static exposure of $\\mathrm{BCl}_3$ at $2.5$ Torr for $20~\\mathrm{s}$ and viscous flow of $\\mathrm{XeF}_2$ at $50~\\mathrm{mTorr}$ for $1\\mathrm{s}$ .","id":"test/atomic-layer-etching/experimental-usecase/20/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_7","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A line chart showing the thickness of AlN versus the number of XeF2/BCl3 2 cycles at 298°C and under viscous flow.\"},{\"panel_id\":\"b\",\"text\":\"A line chart showing the decrease in AlN thickness at 255°C during BCl₃ static etching with an etch rate of 0.62 Å/cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| XeF₂/BCl₃ Cycles | AlN Thickness (Å) |\\n|---|---|\\n| 0 | 2911 |\\n| 10 | 2912 |\\n| 20 | 2912 |\\n| 30 | 2913 |\\n| 40 | 2914 |\"},{\"panel_id\":\"b\",\"text\":\"| XeF₂/BCl₃ Cycles | AlN Thickness (Å) |\\n|---|---|\\n| 0 | - |\\n| 100 | 2850 |\\n| 200 | 2810 |\\n| 300 | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of cycles increases, the thickness of the AlN shows a slight increase.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Viscous flow for both BCl3 and XeF2 at 298 °C, and static flow for BCl3 and viscous flow of XeF2 at 255 °C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Subfigure b shows the BCl3 static flow at 255 °C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A static flow of BCl3 and viscous flow of XeF2 at 255 °C are required to etch the surface.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":4,"width":651,"height":133},{"panel_id":"b","x":3,"y":140,"width":656,"height":339}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":661,"height":478,"image_format":"jpeg","image_sha256":"22ce8eae3d3d58206547f57df62b0e5aa59f14008f22870efdab9acaab18675c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_84ec0afa1681d61dad16457f11e33680c3ceb0560ff64acb7baa4f5a6cea16ef.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/25/84ec0afa1681d61dad16457f11e33680c3ceb0560ff64acb7baa4f5a6cea16ef","sample_id":"atomic-layer-etching/experimental-usecase/25/84ec0afa1681d61dad16457f11e33680c3ceb0560ff64acb7baa4f5a6cea16ef","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch rate of WO₃ increases with increasing BCl₃ exposure at a constant temperature and HF exposure, and saturates at 4 angstrom per cycle.\"},{\"panel_id\":\"b\",\"text\":\"The etch rate of WO₃ increases with increasing HF exposure at a constant temperature and BCl₃ exposure, and soft-saturates at 4.2 angstrom per cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| BCl₃ Exposure (mTorr s) | WO₃ Etch Rate (Å/cycle) |\\n|---|---|\\n| 0 | 0 |\\n| 200 | 3.7 |\\n| 300 | 4.2 |\\n| 500 | 4.1 |\"},{\"panel_id\":\"b\",\"text\":\"| HF Exposure (mTorr s) | WO₃ Etch Rate (Å/cycle) |\\n|---|---|\\n| 0 | 0 |\\n| 100 | 2.7 |\\n| 150 | 3.8 |\\n| 200 | 4.2 |\\n| 300 | 4.3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate would also 4 angstrom per cycle. This is the saturated value so further increasing the exposure would not result in a higher etch rate.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Usually an exponential function is used to fit the datapoints, where fit parameter in the exponent are related to dosing constants.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, there is no full saturation observed. The curve has not flattened fully.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"207 degrees celcius\"}]}]","bbox":[{"panel_id":"a","x":6,"y":8,"width":650,"height":543},{"panel_id":"b","x":4,"y":560,"width":652,"height":549}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/84ec0afa1681d61dad16457f11e33680c3ceb0560ff64acb7baa4f5a6cea16ef.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/84ec0afa1681d61dad16457f11e33680c3ceb0560ff64acb7baa4f5a6cea16ef.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"not_found"},"width":658,"height":1114,"image_format":"jpeg","image_sha256":"24c051a3104aa52ebcb0c6be34020c79a62f5eb525915534aaeb9f6f75b83145","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_31_fig_3.jpg","caption":"Fig. 3. (a) The progression in thickness as a function of the number of pulses or cycles for Hhfac-only pulses, consecutive Hhfac and $\\mathrm{O_2}$ gas pulses, and ALE cycles incorporating both Hhfac and O radical pulses. (b) Real-time QCM measurements during 12 cycles of repeated Hhfac and $\\mathrm{O_2}$ gas dosing, followed by 40 ALE cycles on $\\mathrm{HfO_2}$ at a substrate temperature of $300^{\\circ}\\mathrm{C}$ . The inset shows the magnified region from 1600 to $1700\\mathrm{~s~}$","id":"test/atomic-layer-etching/experimental-usecase/31/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/31/fig_3","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure illustrates the effects of different ALE processing conditions on film etching and mass loss. Panel (a) compares HfO₂, ZrO₂, and Al₂O₃ across three treatments: Hhfac only, Hhfac + O₂ gas, and Hhfac + O radicals. In the first two cases, film thickness remains constant over 50 cycles, indicating negligible etching. However, when O radicals are introduced, HfO₂ film thickness decreases steadily with each cycle, while ZrO₂ and Al₂O₃ remain unchanged—demonstrating material selectivity and process activation via radical chemistry. Panel (b) tracks the mass change during a similar ALE sequence at 300 °C, with a sharp mass decrease occurring only after the O radical step is introduced. The inset FTIR spectra confirm removal of Hhfac and reaction byproducts, supporting the proposed etch mechanism.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of process cycles | HfO₂ (nm) |\\n|--------------------------|-----------|\\n| 0 | 20 |\\n| 10 | 18 |\\n| 20 | 16 |\\n| 30 | 14 |\\n| 40 | 12 |\\n| 50 | 10 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of process cycles | HfO₂ (nm) |\\n|--------------------------|-----------|\\n| 0 | 20 |\\n| 10 | 18 |\\n| 20 | 16 |\\n| 30 | 14 |\\n| 40 | 12 |\\n| 50 | 10 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hhfac exposure, O₂ exposure, O radical introduction, Mass loss etching, FTIR byproduct detection.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Under the Hhfac only and Hhfac + O₂ gas conditions, the film thicknesses of HfO₂, ZrO₂, and Al₂O₃ remain constant, indicating that no etching occurs. However, when Hhfac is combined with O radicals, a steady decrease in HfO₂ film thickness is observed over multiple cycles, while ZrO₂ and Al₂O₃ remain unaffected. This trend suggests that O radicals are necessary to activate etching selectively in HfO₂, and the process is both material- and chemistry-dependent. The findings confirm that etch activation and selectivity are tunable through radical exposure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HfO₂.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":33,"y":0,"width":912,"height":557},{"panel_id":"b","x":5,"y":619,"width":942,"height":545}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/Atomic layer etching of high-k oxide thin films.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":950,"height":1169,"image_format":"jpeg","image_sha256":"7be4a5c3fec51a05c4050bdb5844d34c307918a0f5c1c46f6b1a8eed2f7b9ef1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_44_fig_1.jpg","caption":"FIG. 1. (Color online) Film thickness measured by spectroscopic ellipsometry vs number of AlN ALE reaction cycles at $275^{\\circ}C$ The etch rate increases after removing the $\\mathrm{AlO_xN_y}$ layer on the AlN film.","id":"test/atomic-layer-etching/experimental-usecase/44/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/44/fig_1","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line plot shows the etched thickness of a sample versus the number of Atomic Layer Etching (ALE) cycles at 275°C. The etch process reveals two distinct regions: an initial slow-etch region attributed to a surface AlOₓNᵧ layer, and a subsequent faster-etch region attributed to pure AlN.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle Number | Thickness (Å) |\\n|-------|-------------|\\n| 0 | 491 |\\n| 100 | 479 |\\n| 200 | 472 |\\n| 301 | 460 |\\n| 400 | 435 |\\n| 500 | 400 |\\n| 600 | 355 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Surface AlOₓNᵧ (oxynitride) layer (Cycles 0-300).\\n\\nTransition region to purer AlN (Cycles ~300-400).\\n\\nBulk, pure AlN film (Cycles 400-600).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The AlOₓNᵧ region etches slowly (~0.07 Å/cycle), while pure AlN etches over 5x faster (~0.36 Å/cycle). This creates a significant trade-off: higher material purity (pure AlN) enables faster, more efficient etching, but the presence of even a thin, impure surface layer (AlOₓNᵧ) drastically reduces the effective etch rate and requires many cycles to clear, impacting process throughput.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The transition from an oxygen-containing surface layer (AlOₓNᵧ) to oxygen-free, pure AlN.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The \\\"knee\\\" marks the point where the inconsistent surface oxide is fully removed and etching of the target AlN begins. To achieve precise depth control, the process must first clear this variable surface layer. Therefore, the total etch cycle count must account for this non-productive \\\"overetch\\\" phase to ensure accurate etching into the pure AlN bulk.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":634,"height":533}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/Thermal atomic layer etching of crystalline aluminum nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":639,"height":539,"image_format":"jpeg","image_sha256":"9e6057ee7ab88704be13324d3bef81ade7508c6d44f464e8f249e21f34b2a08e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_44_fig_3.jpg","caption":"FIG. 3. (Color online) Etch rate vs reactant exposure during AlN ALE at $275^{\\circ}C$ a Etch rate vs HF exposure with $\\mathrm{Sn(acac)}_2$ exposure fixed at 900 mTorr s and (b) etch rate vs $\\mathrm{Sn(acac)}_2$ exposure with HF exposure fixed at $1270\\mathrm{mTorr}$ s.","id":"test/atomic-layer-etching/experimental-usecase/44/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/44/fig_3","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image represents the etch rate (Å/cycle) against the exposure (mTorr.s) Etch rate vs HF exposure with Sn(acac)₂ exposure fixed at 900 mTorr. s\"},{\"panel_id\":\"b\",\"text\":\"This image shows Atomic Layer Etching (ALE) saturation curves for a sequential, two-step Sn(acac)₂ / HF thermal etching process of a metal oxide (likely SnO₂). It demonstrates the self-limiting nature of ALE: each reactant exposure saturates, leading to a constant etch rate per cycle once a sufficient exposure dose is reached. Etch rate vs Sn(acac)₂ exposure with HF exposure fixed at 1270 mTorr. s.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Exposure (mTorr·s) | Etch Rate (Å/cycle) |\\n|---|---|\\n| 0 | 0.0 |\\n| 300 | 0.1 |\\n| 600 | 0.2 |\\n| 900 | 0.3 |\\n| 1200 | 0.35 |\\n| 1500 | 0.35 |\\n| 1800 | 0.4 |\"},{\"panel_id\":\"b\",\"text\":\"| Exposure (mTorr·s) | Etch Rate (Å/cycle) |\\n|---|---|\\n| 0 | 0.0 |\\n| 200 | 0.14 |\\n| 400 | 0.23 |\\n| 600 | 0.26 |\\n| 800 | 0.32 |\\n| 1000 | 0.35 |\\n| 1200 | 0.35 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"HF Pulse: Exposure ≥ ~966 mTorr·s to form a saturated AlF₃ layer.\\n\\nPurge: 130 s with N₂ to remove HF and by-products.\\n\\nSn(acac)₂ Pulse: Exposure ≥ ~900 mTorr·s for complete ligand exchange.\\n\\nPurge: 130 s with N₂ to remove Sn(acac)₂ and volatile etch products.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"HF saturates more sharply and shows a risk of Chemical Vapor Etching at high exposure, while Sn(acac)₂ saturates more gradually. This implies HF has a narrower safe process window; precise dose control is critical to avoid runaway etching. The trade-off is that HF's high reactivity enables fast surface fluorination, but demands stricter process control compared to the more forgiving Sn(acac)₂.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A saturated, monolayer-thick AlF₃ surface layer.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The saturation plateau represents a stable process window in which the etch rate remains constant and is unaffected by small changes in reactant dose or pressure. This natural self-limiting behavior enables uniform etching across the wafer and ensures excellent run-to-run repeatability, which is far more important for achieving high yield than a faster but poorly controlled etch process.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":0,"width":631,"height":357},{"panel_id":"b","x":0,"y":367,"width":626,"height":387}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/Thermal atomic layer etching of crystalline aluminum nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":636,"height":758,"image_format":"jpeg","image_sha256":"bd493fe1376d063fb1178ed06e964c4b29180b36e3e78d24797ba803b6752b7d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_4547e83349e7a9a1caf5fbbebd8da3978ec45a7a4a981e4142a90de337b8fc18.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/11/4547e83349e7a9a1caf5fbbebd8da3978ec45a7a4a981e4142a90de337b8fc18","sample_id":"atomic-layer-etching/simulation-usecase/11/4547e83349e7a9a1caf5fbbebd8da3978ec45a7a4a981e4142a90de337b8fc18","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows simulated mass change during 3 complete thermal ALE cycles of Al2O3 at 573 K. Each cycle exhibits a characteristic step pattern: mass increases during HF exposure (Step A, fluorination) by approximately 13 ng/cm², followed by mass decrease during TMA exposure (Step B, etching) by approximately 29 ng/cm², with 30 s purge times between steps.\"},{\"panel_id\":\"b\",\"text\":\"Compares mass change profiles for 3 ALE cycles at three temperatures (543 K, 573 K, 593 K). Higher temperatures result in faster cycle completion, with the 593 K process finishing around 175 s versus approximately 225 s at 543 K, demonstrating the Arrhenius temperature dependence of reaction kinetics.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass change (ng/cm²) |\\n|---|---|\\n| 0 | 0 |\\n| 2 | 13 |\\n| 30 | 13 |\\n| 35 | -16 |\\n| 60 | -16 |\\n| 70 | -3 |\\n| 90 | -3 |\\n| 100 | -32 |\\n| 125 | -32 |\\n| 135 | -19 |\\n| 155 | -19 |\\n| 165 | -48 |\\n| 190 | -48 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | T = 543 K (ng/cm²) | T = 573 K (ng/cm²) | T = 593 K (ng/cm²) |\\n|---|---|---|---|\\n| 0 | 0 | 0 | 0 |\\n| 10 | 13 | 13 | 13 |\\n| 28 | 13 | 13 | 13 |\\n| 34 | 13 | -16 | -16 |\\n| 40 | -16 | -16 | -16 |\\n| 60 | -16 | -16 | -16 |\\n| 66 | -16 | -3 | -3 |\\n| 80 | -16 | -3 | -3 |\\n| 85 | -3 | -3 | -3 |\\n| 92 | -3 | -3 | -3 |\\n| 98 | -3 | -32 | -32 |\\n| 115 | -3 | -32 | -32 |\\n| 125 | -32 | -32 | -19 |\\n| 130 | -32 | -19 | -19 |\\n| 150 | -32 | -19 | -19 |\\n| 158 | -32 | -19 | -48 |\\n| 165 | -19 | -48 | -48 |\\n| 190 | -19 | -48 | -48 |\\n| 205 | -48 | - | - |\\n| 240 | -48 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Each ALE cycle consists of two sequential half-reactions with distinct mass changes. During Step A (HF exposure), fluorine atoms replace oxygen atoms on the Al2O3 surface, forming AlF3 while releasing water, resulting in a net mass increase of approximately 13 ng/cm² because fluorine is heavier than oxygen. During Step B (TMA exposure), trimethylaluminum reacts with the fluorinated surface through ligand exchange, producing volatile dimethylaluminum fluoride (DMAF) that desorbs, causing a mass decrease of approximately 29 ng/cm². The flat regions correspond to the 30 s purge periods.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The horizontal plateaus represent the 30 s purge periods where inert gas removes unreacted precursors and byproducts from the reactor before the next half-cycle begins.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mass change simulations provide critical parameters for process optimization without costly experiments. They reveal half-cycle times needed to achieve saturation at different operating conditions, enabling selection of temperature and pressure combinations that balance throughput with process quality. The data also validates whether the self-limiting behavior characteristic of ALE is achieved, as indicated by the flat plateaus. Additionally, the net mass loss per cycle can be correlated with etch per cycle measurements to verify the microscopic model accuracy.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher temperatures significantly reduce the total cycle time, with 3 cycles completing in approximately 175 s at 593 K compared to approximately 225 s at 543 K.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":4,"width":603,"height":506},{"panel_id":"b","x":3,"y":514,"width":600,"height":504}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/4547e83349e7a9a1caf5fbbebd8da3978ec45a7a4a981e4142a90de337b8fc18.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/4547e83349e7a9a1caf5fbbebd8da3978ec45a7a4a981e4142a90de337b8fc18.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"not_found"},"width":608,"height":1022,"image_format":"jpeg","image_sha256":"da6365720babd13569196b6c704148af4dbf8dbd48923b3be812180277fe59bb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_538f430c664805721e436d2436803b1712d3747d91728885c13fa415252c98a7.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/11/538f430c664805721e436d2436803b1712d3747d91728885c13fa415252c98a7","sample_id":"atomic-layer-etching/simulation-usecase/11/538f430c664805721e436d2436803b1712d3747d91728885c13fa415252c98a7","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Convergence test for the kinetic energy cutoff (ecutwfc) parameter in DFT calculations for θ-Al2O3. The total energy decreases from approximately -2388 Ry at 20 Ry cutoff to about -2454 Ry, converging when ecutwfc reaches 50 Ry. This determines the minimum plane wave basis set size needed for accurate electronic structure calculations.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Kinetic energy cut-off (Ry) | Total energy (Ry) |\\n|---|---|\\n| 20 | -2390 |\\n| 25 | -2430 |\\n| 30 | -2450 |\\n| 35 | -2450 |\\n| 40 | -2450 |\\n| 45 | -2450 |\\n| 50 | -2450 |\\n| 55 | -2450 |\\n| 60 | -2450 |\\n| 65 | -2450 |\\n| 70 | -2450 |\\n| 75 | -2450 |\\n| 80 | -2450 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The kinetic energy cutoff (ecutwfc) determines how many plane waves are included in the basis set expansion of the electronic wavefunctions. A higher cutoff includes more plane waves, improving accuracy but increasing computational cost. The optimization finds the minimum cutoff value where the total energy is converged, balancing accuracy against efficiency. Using a value below convergence yields unreliable energies, while using excessively high values wastes computational resources without improving results.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The total energy difference is approximately 66 Ry, decreasing from about -2388 Ry at 20 Ry cutoff to about -2454 Ry at 50 Ry cutoff.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The x-axis represents the kinetic energy cutoff (ecutwfc) in Rydberg units, which controls the number of plane waves used in the DFT basis set.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A value of 50 Ry was selected because it is the point where total energy convergence is achieved, meaning further increases provide no significant improvement in accuracy.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":5,"width":581,"height":422}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/538f430c664805721e436d2436803b1712d3747d91728885c13fa415252c98a7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/538f430c664805721e436d2436803b1712d3747d91728885c13fa415252c98a7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"not_found"},"width":586,"height":425,"image_format":"jpeg","image_sha256":"b52b6e0f9ffa02231d7717c6ad46ab79cd1861f6a81421f6ccd1dcf48e5f24bb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_f29fb0936e8517e60638237bcc9fde1e5c001e80bfc85cf97feddcf84eb574c3.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/11/f29fb0936e8517e60638237bcc9fde1e5c001e80bfc85cf97feddcf84eb574c3","sample_id":"atomic-layer-etching/simulation-usecase/11/f29fb0936e8517e60638237bcc9fde1e5c001e80bfc85cf97feddcf84eb574c3","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Convergence test for the kinetic energy cutoff for charge density and potential (ecutrho) in DFT calculations for θ-Al2O3 (2̄ 0 1). Unlike ecutwfc, the total energy increases (becomes less negative) with increasing ecutrho, rising from approximately -2454.038 Ry at 100 Ry to a converged value around -2454.006 Ry at ecutrho=200 Ry. This parameter controls the grid density for representing charge density and potentials.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Kinetic energy cut-off for charge density and potential (Ry) | Total energy (Ry) |\\n|---|---|\\n| 100 | -0.040 |\\n| 150 | -0.010 |\\n| 200 | -0.005 |\\n| 250 | -0.005 |\\n| 300 | -0.005 |\\n| 350 | -0.005 |\\n| 400 | -0.005 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The two parameters show opposite convergence trends. For ecutwfc, the total energy decreases (becomes more negative) with increasing cutoff values. For ecutrho, the total energy increases (becomes less negative) as the cutoff increases. Both parameters eventually reach convergence plateaus, but they approach their final values from opposite directions. This reflects their different roles in the calculation: ecutwfc controls wavefunction expansion while ecutrho controls charge density representation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ecutrho controls the kinetic energy cutoff for representing the charge density and potential on the real-space grid.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A value of 200 Ry was selected because the total energy no longer changes significantly beyond this point, indicating convergence.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In this study, ecutrho (200 Ry) is set to 4 times ecutwfc (50 Ry), which is a common ratio used for PAW pseudopotential calculations to ensure adequate charge density representation.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":7,"width":571,"height":388}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/f29fb0936e8517e60638237bcc9fde1e5c001e80bfc85cf97feddcf84eb574c3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/f29fb0936e8517e60638237bcc9fde1e5c001e80bfc85cf97feddcf84eb574c3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"not_found"},"width":578,"height":394,"image_format":"jpeg","image_sha256":"a34587de75f1d637b6773a4e056e0b9467bafe9297effb84855ff40a846f5ff3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_fig_1.jpg","caption":"(c) The $k$ -point optimization of $\\theta -\\mathrm{Al}_2\\mathrm{O}_3$ (2 0 1). Fig. 1 - The total energy converges when ecutwfc is 50 (a), ecutrho is 200 (b), and the number of $k$ -points is 4 (c), respectively.","id":"test/atomic-layer-etching/simulation-usecase/11/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/11/fig_1","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Convergence test for the k-point grid density in DFT calculations for θ-Al2O3 (2̄ 0 1). The total energy decreases from approximately -2451 Ry at k-point=1 to about -2454.7 Ry, achieving convergence at k-point=4. This parameter determines the sampling density for Brillouin zone integration in the electronic structure calculations.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| K-point | Total energy (RY) |\\n|---|---|\\n| 1 | -2451.0 |\\n| 2 | -2454.5 |\\n| 3 | -2454.0 |\\n| 4 | -2454.0 |\\n| 5 | -2454.0 |\\n| 6 | -2454.0 |\\n| 7 | -2454.0 |\\n| 8 | -2454.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"K-points define the sampling grid for integrating electronic properties over the Brillouin zone in reciprocal space. Periodic DFT calculations require evaluating wavefunctions at multiple k-points to accurately compute total energies and other properties. Insufficient k-point sampling leads to inaccurate results, while excessive sampling increases computational cost without improving accuracy. The convergence test identifies the minimum k-point density that yields reliable results.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The total energy decreases by approximately 3.7 Ry, from about -2451 Ry at k-point=1 to approximately -2454.7 Ry at convergence.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Convergence is achieved at k-point=4, after which the total energy remains essentially constant.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"These parameters control different aspects of calculation accuracy: ecutwfc determines basis set completeness while k-points determine Brillouin zone sampling, so each must be independently optimized.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":7,"width":572,"height":418}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":586,"height":425,"image_format":"jpeg","image_sha256":"df7d68a91522c9fd93e91498b85c4ca14ec7ced6cb079a792e0ed89cabd8de6c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_fig_5.jpg","caption":"Fig. 5 - Film thickness with respect to number of cycles. It is assumed that the initial thickness is 100 Å. An etch thickness per cycle of 0.46 Å/cycle is applied.","id":"test/atomic-layer-etching/simulation-usecase/11/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/11/fig_5","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The thickness decreases linearly with increasing number of cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of cycle | Thickness (angstrom) |\\n|----------------|---------------------|\\n| 0 | 100 |\\n| 25 | 90 |\\n| 50 | 80 |\\n| 75 | 70 |\\n| 100 | 60 |\\n| 125 | 50 |\\n| 150 | 40 |\\n| 175 | 30 |\\n| 200 | 20 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The y-axis represents the Al2O3 film thickness measured in angstroms (Å).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The linear relationship reflects the self-limiting nature of the ALE process. Each cycle removes a consistent amount of material (0.46 Å) regardless of how many cycles have been performed, because the surface reactions saturate after complete monolayer conversion. This contrasts with continuous etching processes where the etch rate may vary with film thickness or process time. The linearity is a defining characteristic of ALE and enables precise, predictable thickness control.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 217 cycles would be needed to completely etch the 100 Å film (100 Å ÷ 0.46 Å/cycle ≈ 217 cycles).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch per cycle (EPC) value of 0.46 Å/cycle is taken from experimental measurements reported in the literature, as the kMC model itself does not directly compute EPC.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":6,"width":606,"height":440}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":611,"height":447,"image_format":"jpeg","image_sha256":"def13787f39744adad77ed3b35b3560d775b543490439eb20f2349f6fec870c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_21_figure_4.jpg","caption":"Figure 4. Data for (a) the Ta etch rate in $\\mathrm{Cl}_2$ plasma (i.e., Step A only) as a function of temperature, showing that etching is suppressed at $0^{\\circ}\\mathrm{C}$ . (b) Etch per cycle (ETC) as a function of ion energy for the Ta substrate at $0^{\\circ}\\mathrm{C}$ for ALE (in gray), averaged over 40 full ALE cycles, and for Ar sputter (i.e., Step B only) (in blue).","id":"test/atomic-layer-etching/simulation-usecase/21/figure_4","sample_id":"atomic-layer-etching/simulation-usecase/21/figure_4","subset":"line-chart","split":"test","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Ta chemical etching in Cl₂ plasma (Step A only) is suppressed at 0 °C and increases with wafer temperature, reaching ~2 nm/s at 60 °C. This indicates strong thermal activation of the Step-A chemistry.\"},{\"panel_id\":\"b\",\"text\":\"At 0 °C, Ta ALE shows an ALE window with EPC near ~0.35–0.45 nm/cycle across roughly 20–90 eV, followed by a rise at higher energy. Ar-only sputtering increases steadily with ion energy and lacks a plateau, consistent with non-self-limiting removal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wafer temperature (°C) | Etch rate (nm/s) |\\n|---|---|\\n| 0 | ~0.00 |\\n| 10 | ~0.10 |\\n| 30 | ~0.50 |\\n| 60 | ~2.00 |\"},{\"panel_id\":\"b\",\"text\":\"| Ion energy (eV) | EPC in ALE mode (nm/cycle) | EPC in Ar-only mode (nm/cycle) |\\n|---|---|---|\\n| 0 | ~0.00 | ~0.00 |\\n| 20 | ~0.42 | ~0.00 |\\n| 40 | ~0.36 | ~0.02 |\\n| 60 | ~0.44 | ~0.06 |\\n| 90 | ~0.43 | ~0.25 |\\n| 115 | ~0.65 | ~0.40 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 0 °C the surface reaction pathway for chlorination/volatile product formation is kinetically inhibited, so net chemical etching is negligible.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 10 °C.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-EPC remains approximately constant (~0.35 nm/cycle) between ~20–80 eV.\\n-Increasing ion energy within this range does not increase removal.\\n-The Ar-only curve lacks a plateau, underscoring the chemical selectivity of ALE.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The stable EPC plateau in the ALE curve indicates self-limiting removal once the surface has been chemically modified, with ion energy serving only to trigger detachment. The monotonic increase in the Ar-only curve reflects purely physical sputtering, where removal scales continuously with energy. This contrast shows that ALE achieves controlled, low-damage removal by separating chemical preparation from physical activation.\"}]}]","bbox":[{"panel_id":"a","x":50,"y":7,"width":486,"height":308},{"panel_id":"b","x":47,"y":351,"width":492,"height":293}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/Review Paper -- Atomic Layer Etching Rethinking the Art of Etch.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":539,"height":644,"image_format":"jpeg","image_sha256":"168e06982f9d9bd48181fbbd8b492b2b66ab94aaed4cbe74355cbb0efbf6f18c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/line-chart/train/metadata.jsonl b/subsets/line-chart/train/metadata.jsonl index 6c7929d2477519edcd6a4be9d85dc97ffe71a661..4d87066adcd5c73271129f5737aed9ddcbba719a 100644 --- a/subsets/line-chart/train/metadata.jsonl +++ b/subsets/line-chart/train/metadata.jsonl @@ -1,59 +1,59 @@ -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_12_fig_10.jpg","caption":"Fig. 10. Tungsten film thickness deposited at $425 \\mathrm{K}$ versus number of AB cycles. The $\\mathrm{WF}_6$ and $\\mathrm{Si}_2\\mathrm{H}_6$ reactant exposures of nine pulses and 40 pulses, respectively, were sufficient for complete half-reactions. The least squares linear fit to the data yields a tungsten growth rate of $2.5 \\mathrm{\\AA / AB}$ cycle.","id":"train/atomic-layer-deposition/experimental-usecase/12/fig_10","sample_id":"atomic-layer-deposition/experimental-usecase/12/fig_10","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/J.W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":594,"height":581,"image_format":"jpeg","image_sha256":"0f04ce1c4e14012a05992cff50250d19cf171ed2c666e9739fb0ab6dbf10123c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":1,"width":586,"height":576}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows a linear relationship between the number of AB cycles and the thickness of a tungsten film deposited at 425 K, confirming self-limiting Atomic Layer Deposition (ALD) behavior. A least squares fit gives a tungsten growth rate of 2.5 Å/cycle using reactant exposures of 9 pulses of WF₆ and 40 pulses of Si₂H₆ per cycle, sufficient for complete surface reactions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| AB Cycles | Tungsten Film Thickness (Å) |\\n|---|---|\\n| 0 | 0 |\\n| 10 | 25 |\\n| 20 | 50 |\\n| 30 | 75 |\\n| 40 | 100 |\\n| 50 | 125 |\\n| 60 | 150 |\\n| 70 | 175 |\\n| 80 | 200 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The linear chart shows a consistent, repeatable increase of 2.5 Å per cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"425 K (152 °C).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Immediate nucleation of tungsten from the first cycle.\\n, No incubation period or delay in film growth.\\n, Ideal surface reactivity from the start.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The perfect linearity guarantees uniform, void-free filling of high-aspect-ratio features. The low temperature (425 K) prevents damage to pre-existing chip layers. This enables reliable fabrication of nanoscale tungsten interconnects.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_12_fig_11.jpg","caption":"Fig. 11. Tungsten film thickness deposited after three AB cycles versus substrate temperature. The $\\mathrm{WF}_6$ and $\\mathrm{Si}_2\\mathrm{H}_6$ reactant exposures at each temperature were sufficient for complete half-reactions.","id":"train/atomic-layer-deposition/experimental-usecase/12/fig_11","sample_id":"atomic-layer-deposition/experimental-usecase/12/fig_11","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/J.W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":600,"height":609,"image_format":"jpeg","image_sha256":"dab9ccea58557a79f71245107afc6b8b75501b68734c468d3819ed59e543cdec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":5,"width":595,"height":600}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line graph represents the tungsten film thickness deposited after 3 AB cycles against substrate temperature (300–600 K). The curve shows a distinct peak: thickness initially rises with temperature, reaches a maximum near 425 K, and then saturates at higher temperatures. WF₆ and Si₂H₆ reactant exposures at each temperature were sufficient for complete half-reactions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (K) | Tungsten Film Thickness (Å) |\\n|---|---|\\n| 300 | 3.4 |\\n| 400 | 6.7 |\\n| 500 | 7.5 |\\n| 600 | 7.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. FTIR confirms the reactions remain self-limiting, surface-saturated half-reactions; the constant rate results from stable surface intermediate coverage, not a gas-phase decomposition mechanism.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The stability of fluorine-containing surface intermediates (WFₓ, SiHᵧF_z) versus the loss of surface hydroxyl groups (dehydroxylation) on oxides.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Their stability keeps the surface consistently saturated with reactive sites, so each cycle deposits the same amount of tungsten. This uniform site availability produces the flat, temperature-independent growth-rate plateau seen on the graph\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It provides a large process window. This minimizes sensitivity to minor temperature fluctuations across a wafer or between tools. It ensures uniform film thickness and properties, improving production yield and repeatability.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_18_fig4.jpg","caption":"FiG.4. rPRA t t t t cursor Ar purge. The process parameters for these depositions are stated in Table I.","id":"train/atomic-layer-deposition/experimental-usecase/18/fig4","sample_id":"atomic-layer-deposition/experimental-usecase/18/fig4","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"line chart"},{"panel_id":"d","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/Triratna Muneshwar et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":997,"height":741,"image_format":"jpeg","image_sha256":"845e3a13ad4767a45632c671a54f084ac8248c6d8b390930dd902684da8710fe","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":0,"width":490,"height":330},{"panel_id":"b","x":520,"y":0,"width":477,"height":363},{"panel_id":"c","x":10,"y":389,"width":476,"height":352},{"panel_id":"d","x":520,"y":389,"width":477,"height":352}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"ZrN growth per cycle versus substrate temperature shows a low-temperature ALD window with stable GPC and a sharp increase at higher temperatures due to thermally activated, non-self-limiting growth.\"},{\"panel_id\":\"b\",\"text\":\"GPC saturation with increasing TDMAZr pulse time confirms self-limiting precursor adsorption and complete surface coverage beyond a critical pulse duration.\"},{\"panel_id\":\"c\",\"text\":\"GPC rapidly reaches a constant value with increasing forming-gas plasma exposure, indicating efficient ligand removal and nitridation within short plasma times.\"},{\"panel_id\":\"d\",\"text\":\"Post-precursor purge time affects GPC: insufficient purging causes elevated growth from parasitic reactions, while longer purge times restore true ALD behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Substrate Temperature (°C) | GPC (nm/cycle) |\\n|---|---|\\n| 100 | ~0.11 |\\n| 150 | ~0.10 |\\n| 200 | ~0.11 |\\n| 250 | ~0.15 |\\n| 300 | ~0.55 |\"},{\"panel_id\":\"b\",\"text\":\"| TDMAZr pulse (s) | GPC (nm/cycle) |\\n|---|---|\\n| 0.02 | ~0.07 |\\n| 0.04 | ~0.09 |\\n| 0.06 | ~0.10 |\\n| 0.08 | ~0.10 |\\n| 0.10 | ~0.10 |\\n| 0.12 | ~0.10 |\\n| 0.16 | ~0.10 |\\n| 0.20 | ~0.10 |\"},{\"panel_id\":\"c\",\"text\":\"| Plasma exposure (s) | GPC (nm/cycle) |\\n|---|---|\\n| 1 | ~0.12 |\\n| 3 | ~0.12 |\\n| 6 | ~0.10 |\\n| 9 | ~0.10 |\\n| 12 | ~0.10 |\\n| 15 | ~0.10 |\\n| 18 | ~0.10 |\"},{\"panel_id\":\"d\",\"text\":\"| Post-TDMAZr purge (s) | GPC (nm/cycle) |\\n|---|---|\\n| 1 | ~0.26 |\\n| 3 | ~0.25 |\\n| 6 | ~0.10 |\\n| 9 | ~0.10 |\\n| 12 | ~0.10 |\\n| 15 | ~0.10 |\\n| 18 | ~0.10 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure identifies an ALD process window that ensures stable, self-limiting ZrN growth at low temperatures by balancing precursor exposure, plasma reactivity, and purge efficiency. These optimized conditions yield consistent growth per cycle while suppressing parasitic CVD reactions, enabling uniform, conductive ZrN films suitable for temperature-sensitive electronic and interconnect applications\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"GPC increases and saturates with increasing TDMAZr pulse time, while it decreases and then stabilizes with increasing post-precursor purge time.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Surface saturation by TDMAZr precursor molecules, Efficient removal of surface ligands by forming-gas plasma, Prevention of gas-phase reactions through sufficient purge time, Thermal stability of surface-bound species within the ALD window\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_18_fig_3.jpg","caption":"FIG. 3. (a) Film thickness vs number of PEALD cycles as determined from d-iSE data analysis for $\\mathrm{ZrN}$ deposition on Si substrate at $\\mathrm{T_{sub} = 150^{\\circ}C}$ $\\mathrm{t_1 = 0.12s}$ $\\mathrm{t_2 = 15s}$ $\\mathrm{t_3 = 15s}$ and $\\mathrm{t_4 = 15s}$ In a steady growth regime, GPC of $0.10\\mathrm{nm}$ cycle was determined from the linear fit (dashed lines). (b) Comparison between the film thicknesses determined from iSE at $150^{\\circ}\\mathrm{C}$ and ex-situ XRR at room temperature on identical samples.","id":"train/atomic-layer-deposition/experimental-usecase/18/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/18/fig_3","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/Triratna Muneshwar et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":608,"height":453,"image_format":"jpeg","image_sha256":"449c81a6b1abc01002f00a7b20dc5332c9f680bd05fbde0eedbfe9856490c32d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":603,"height":449},{"panel_id":"b","x":351,"y":202,"width":237,"height":172}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"ZrN film thickness increases linearly with PEALD cycle number, measured by dynamic in-situ spectroscopic ellipsometry. Linear fit gives a growth per cycle of ~0.103 nm, confirming immediate nucleation and self-limiting ALD behavior.\"},{\"panel_id\":\"b\",\"text\":\"Comparison of ZrN thickness measured in-situ by ellipsometry and ex-situ by X-ray reflectivity on identical samples. Close agreement validates the accuracy of the ellipsometric thickness model.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycle # | ZrN thickness (nm) |\\n|---|---|\\n| 5 | ~0.5 |\\n| 10 | ~1.0 |\\n| 20 | ~2.1 |\\n| 30 | ~3.1 |\\n| 40 | ~4.1 |\\n| 50 | ~5.2 |\\n| 60 | ~6.2 |\"},{\"panel_id\":\"b\",\"text\":\"| ALD cycle # | Thickness (nm) |\\n|---|---|\\n| 25 | ~2.6 |\\n| 50 | ~5.2 |\\n| 75 | ~7.7 |\\n| 100 | ~10.3 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The linear thickness increase with cycle number demonstrates excellent process stability and reproducibility, allowing precise thickness control through cycle counting. The validated growth per cycle and agreement between in-situ and ex-situ measurements ensure reliable scaling of ZrN film thickness, which is essential for integrating conductive nitride layers into advanced electronic and interconnect applications.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ZrN film thickness increases linearly with ALD cycle number with a constant growth rate of approximately 0.10 nm per cycle.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Linear thickness increase without incubation delay, Consistent slope across all measured cycles, Agreement between in-situ SE and ex-situ XRR thickness values, Minimal scatter around the linear fit\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_18_fig_7.jpg","caption":"FiG. 7. (a) Electrical resistivity of $\\mathrm{ZrN}$ PEALD films deposited on thermal $\\mathrm{SiO_2}$ substrate at $150^{\\circ}\\mathrm{C}$ , as a function of measurement temperature. (b) Plot of $\\Delta \\rho /\\rho_{\\mathrm{o}}$ vs measurement temperature showing TCR of $0.0088 / ^{\\circ}\\mathrm{C}$ for $\\mathrm{ZrN}$ films.","id":"train/atomic-layer-deposition/experimental-usecase/18/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/18/fig_7","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/Triratna Muneshwar et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":608,"height":441,"image_format":"jpeg","image_sha256":"3b9ccd4183aad7ff41a96c2f349a61475a33c8211b4b8d3c2fb6dd6d72085479","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":6,"width":606,"height":434},{"panel_id":"b","x":344,"y":202,"width":242,"height":161}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Electrical resistivity of PEALD-grown ZrN films versus measurement temperature shows a linear increase, characteristic of metallic conduction dominated by electron–phonon scattering.\"},{\"panel_id\":\"b\",\"text\":\"Normalized resistivity change (Δρ/ρ₀) versus temperature. Positive temperature coefficient of resistivity (TCR ≈ 0.0088 %/°C) confirms stable metallic transport over the measured range.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Resistivity (µΩ·cm) |\\n|---|---|\\n| 25 | ~560 |\\n| 50 | ~650 |\\n| 75 | ~750 |\\n| 100 | ~880 |\\n| 125 | ~1020 |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | Δρ/ρ₀ |\\n|---|---|\\n| 25 | 0.00 |\\n| 50 | ~0.002 |\\n| 75 | ~0.004 |\\n| 100 | ~0.006 |\\n| 125 | ~0.009 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The linear increase of resistivity with temperature and the positive, stable TCR confirm that the PEALD-grown ZrN films exhibit metallic conduction with predictable thermal behavior. This stability in electrical performance, combined with low-temperature deposition capability, supports the suitability of ZrN films for applications such as conductive diffusion barriers, interconnect layers, and electrodes in microelectronic devices where thermal reliability is essential.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The resistivity increases approximately linearly with temperature, yielding a positive TCR of about 0.0088 %/°C.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Presence of metallic Zr 4d conduction states, Electron–phonon scattering dominating charge transport, Continuous, dense ZrN film microstructure, Low defect-induced carrier localization\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_2_figure_2.jpg","caption":"Figure 2. Film thickness vs the number of reaction cycles completed.","id":"train/atomic-layer-deposition/experimental-usecase/2/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/2/figure_2","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":533,"height":381,"image_format":"jpeg","image_sha256":"38b33f84a9c8cf172d21ae022e8832e387c82e443279f91b84d02ab2781cb8be","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":529,"height":378}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the evolution of film thickness as a function of the total number of ALD reaction cycles. The relationship is strongly linear, with thickness increasing from ~35 nm at 1000 cycles to ~105 nm at 3000 cycles. The linear fit and narrow error bars suggest a stable, fully saturated ALD process in which the growth per cycle (GPC) remains constant throughout the experiment.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of reaction cycles | Film thickness (nm) |\\n|---------------------------|----------------------|\\n| 1000 | ~35 |\\n| 1500 | ~50 |\\n| 2000 | ~70 |\\n| 3000 | ~105 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"- Constant surface saturation during each precursor exposure step\\n- Efficient purging that prevents gas-phase or parasitic reactions\\n- Stable substrate temperature across all cycles\\n- Reproducible adsorption and ligand-removal reactions in every half-cycle\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A constant and uniform growth per cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"CVD-like growth would introduce continuous deposition during reactant exposure, causing the growth rate to depend on time rather than discrete cycles. This typically results in super-linear thickness increases with cycle count. The strictly linear trend observed confirms that growth occurs only during surface-limited reactions, consistent with true ALD rather than CVD behavior.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A linear relationship allows thickness to be defined solely by the number of ALD cycles, enabling deterministic control without reliance on in-situ end-point detection. This is critical for nanoscale devices where deviations of even a few nanometers can significantly alter electrical, optical, or mechanical performance. Linear scaling simplifies process integration and improves reproducibility across wafers and batches.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_22_fig_1.jpg","caption":"Fig. 1. Growth rate of LiF thin films as a function of deposition temperature. Lithd and $\\mathrm{TiF_4}$ pulse lengths were 2 s and purge times between these pulses were 4 s.","id":"train/atomic-layer-deposition/experimental-usecase/22/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/22/fig_1","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/Miia Mantymaki et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":637,"height":500,"image_format":"jpeg","image_sha256":"7874440260e4e6451b2701b6df09a0dee832af9620fedb15f77ee586a95157c9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":634,"height":495}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the growth rate (Å/cycle) as a function of the deposition temperature (°C). The growth rate of the material decreases as the deposition temperature increases, reaching at minimum at around 320 °C before slightly increasing again.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition temperature / °C | Growth rate Å / cycle |\\n|---|---|\\n| 250 | 1.5 ± 0.1 |\\n| 275 | 1.3 ± 0.1 |\\n| 300 | 1.2 ± 0.1 |\\n| 310 | 1.0 ± 0.1 |\\n| 350 | 1.2 ± 0.1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows the growth per cycles (Å/cycle) for different temperatures of deposition (between 250 °C and 350 °C).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the deposition temperature increases, the growth per cycle decreases up to a temperature of 25 °C. After this point, growth per cycle increases again.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"325 °C leads to the lowest growth rate.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At this point, growth per cycle reaches its maximum value, enabling deeper etching in a single cycle.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_22_fig_2.jpg","caption":"Fig. 2. Growth rate of LiF thin films as a function of $\\mathrm{TiF_4}$ pulse length at $325^{\\circ}C$ The Lithd pulse was kept at 2 s and purge times were 4 s.","id":"train/atomic-layer-deposition/experimental-usecase/22/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/22/fig_2","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/Miia Mantymaki et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":641,"height":500,"image_format":"jpeg","image_sha256":"2cdebae3b5a139d9b917822c2d261b0df6245ac167cf3834ab551cded63c518d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":636,"height":493}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the growth rate of a material in Å per cycle as a function of TiF pulse length in seconds. The growth rate increases with increasing pulse length but it slightly decreases at 2 s.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TiF, pulse length / s | Growth rate Å/cycle |\\n|---|---|\\n| 0.5 | 0.95 |\\n| 1 | 1.00 |\\n| 2 | 0.95 |\\n| 3 | 1.20 |\\n| 4 | 1.30 |\\n| 6 | 1.40 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The growth rate increases almost linearly with the length of the TiF4 pulse, but decreases slightly at 2s.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.5 s and 2 s.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No for this case, because the growth rate doesn't remain constant.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_22_fig_3.jpg","caption":"Fig. 3. Growth rate of LiF thin films as a function of Lithd pulse length at $325^{\\circ}C$ The $\\mathrm{TiF_4}$ pulse was kept at 1 s and purge times were 4 s.","id":"train/atomic-layer-deposition/experimental-usecase/22/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/22/fig_3","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/Miia Mantymaki et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":647,"height":495,"image_format":"jpeg","image_sha256":"dfd9d1dbdc53bade726626cae20ddcc6a7f686f24bf302efc29e6218967d377a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":4,"width":644,"height":490}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the growth rate (Å/cycle) as a function of the Lithd pulse length (s). The growth rate increases linearly with increasing lithd pulse length.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Lithd pulse length / s | Growth rate / Å / cycle |\\n|---|---|\\n| 1 | 0.75 ± 0.05 |\\n| 2 | 1.00 ± 0.05 |\\n| 3 | 1.05 ± 0.05 |\\n| 4 | 1.10 ± 0.05 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is not possible to observe this because the growth rate does not remain constant throughout the Lithd pulse length.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The growth rate increases almost linearly with an increase in the length of the Lithd pulse.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1 s of Lithd pulse length show the lowest growth rate with a value of approximately of 0.7 Å/cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Growth rate saturation can be observed as a constant values over changes in the x-axis values. In this case, increasing the Lithd pulse length to over 4 s would reveal whether the growth rate remains constant. However, it is also necessary to consider the limitations of the process itself, such as the maximum amount of Lithd that can be loaded into the reactor.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_7.jpg","caption":"Figure 7. (a) Resistivity versus percentage of $\\mathrm{SnO_2}$ cycles measured using four-point probe for ALD ITO films prepared on glass at $275^{\\circ}C$ using 300 cycles. (b) Hall probe measurements of the same ITO films showing carrier concentration and mobility.","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_7","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":1270,"height":570,"image_format":"jpeg","image_sha256":"09502c89c8d6cbea94a8b031ecfff0e3d67f8a1b28fbcfcdb229c08f15cb33a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":585,"height":568},{"panel_id":"b","x":650,"y":10,"width":615,"height":559}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows that resistivity initially drops sharply with increasing % SnO₂ cycles and then increases again beyond 20%.\"},{\"panel_id\":\"b\",\"text\":\"The multi-axis chart indicates that carrier concentration increases significantly with SnO₂ cycles, while mobility remains relatively constant.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| % SnO₂ Cycles | Resistivity (Ohm·cm) | Carrier Concentration (cm⁻³) | Mobility (cm²/V·s) |\\n|---------------|----------------------|------------------------------|---------------------|\\n| 0 | 1e2 | 1e19 | 10 |\\n| 5 | 1e-3 | 1e20 | 100 |\\n| 10 | 1e-3 | 1e21 | 100 |\\n| 15 | 1e-3 | — | — |\\n| 20 | 1e-3 | — | — |\\n| 25 | 1e3 | 1e22 | 100 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"25%\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Resistivity drops sharply at low SnO₂ percentages, plateaus, and then increases again beyond 20%.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Resisitivity, Carrier concentration, Mobility\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_29_figure_5.jpg","caption":"Figure 5. Normalized integrated absorbances for the $\\mathrm{W - F}_x$ stretching mode $(\\sim 680~\\mathrm{cm}^{-1})$ and the $\\mathrm{N - H}_2$ stretching mode $(\\sim 3400~\\mathrm{cm}^{-1})$ vs. reactant exposure during the (a) $\\mathrm{NH}_3$ and (b) $\\mathrm{WF}_6$ half-reactions at $600~\\mathrm{K}$ .","id":"train/atomic-layer-deposition/experimental-usecase/29/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/29/figure_5","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/J. W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":658,"height":875,"image_format":"jpeg","image_sha256":"81b8e397e377e1afaaee38dcd141f8a33bc67c3ad3fb16b1093e960e5defab42","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":653,"height":399},{"panel_id":"b","x":0,"y":403,"width":658,"height":436}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The normalized integrated absorbance of N-H₂ Stretch and W-Fₓ Stretch against NH3 exposure at T = 600 K.\"},{\"panel_id\":\"b\",\"text\":\"The normalized integrated absorbance of N-H₂ Stretch and W-Fₓ Stretch against WF6 exposure at T = 600 K.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reactant Exposure (Torr min) | N-H₂ Stretch | W-Fₓ Stretch |\\n|---|---|---|\\n| 0 | 0.0 | 0.0 |\\n| 10⁻³ | 0.1 | 0.9 |\\n| 10⁻² | 0.2 | 0.8 |\\n| 10⁻¹ | 0.3 | 0.7 |\\n| 1 | 0.4 | 0.6 |\\n| 10 | 0.5 | 0.5 |\\n| 10² | 0.6 | 0.4 |\\n| 10³ | 0.7 | 0.3 |\"},{\"panel_id\":\"b\",\"text\":\"| Reactant Exposure (Torr min) | N-H₂ Stretch | W-Fₓ Stretch |\\n|---|---|---|\\n| 0 | 0.0 | 0.0 |\\n| 10⁻³ | 0.1 | 0.9 |\\n| 10⁻² | 0.2 | 0.8 |\\n| 10⁻¹ | 0.3 | 0.7 |\\n| 1 | 0.4 | 0.6 |\\n| 10 | 0.5 | 0.5 |\\n| 10² | 0.6 | 0.4 |\\n| 10³ | 0.7 | 0.3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 0.1.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 0.9.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the NH3 exposure, the loss of WFx surface species occurs more rapidly than the adsorption of NH2 surface species. When compared to the WF6 exposure, the rate of loss and gain of surface species is roughly equal. The authors relate this phenomenon to NH3 molecules reacting with multiple WFx surface species.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 0.7.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_29_figure_8.jpg","caption":"Figure 8. Tungsten nitride film thickness measured by ellipsometry vs. number of AB cycles at $600~\\mathrm{K}$ . The $\\mathrm{NH_3}$ exposure of $12,000\\mathrm{L}$ and $\\mathrm{WF_6}$ exposure of $4300\\mathrm{L}$ were sufficient for complete half-reactions during each AB cycle.","id":"train/atomic-layer-deposition/experimental-usecase/29/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/29/figure_8","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/J. W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":672,"height":647,"image_format":"jpeg","image_sha256":"5ae8985e885d69d0381b98cd173842f15dbe9cab28e0e5fd67268c22d1865492","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":667,"height":641}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows a linear relationship between the number of AB cycles and film thickness, indicating a linear growth rate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| AB Cycles | Film Thickness (Å) |\\n|---|---|\\n| 3 | 7.5 |\\n| 6 | 15 |\\n| 12 | 30.5 |\\n| 19 | 48.5 |\\n| 25 | 64 |\\n| 32 | 81.5 |\\n| 48 | 122.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"75 Å.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"12,000 L.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"600 K.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2.55 Å/cycle.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_29_figure_9.jpg","caption":"Figure 9. Ellipsometric measurements of the tungsten nitride film thickness deposited by three AB cycles at various substrate temperatures. Reactant exposures were sufficient for complete half-reactions at each temperature.","id":"train/atomic-layer-deposition/experimental-usecase/29/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/29/figure_9","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/J. W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":680,"height":680,"image_format":"jpeg","image_sha256":"29f460e6f2e3250d768c02000c662bad4a5a73c3956a7e024ca9908c3fcd9e17","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":1,"width":672,"height":675}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the relationship between film thickness and temperature, showing an increase up to 600 K followed by a plateau.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (K) | Film Thickness (Å) |\\n|---|---|\\n| 400 | 0.5 |\\n| 500 | 3.5 |\\n| 550 | 7.0 |\\n| 600 | 7.75 |\\n| 650 | 8.0 |\\n| 700 | 7.75 |\\n| 750 | 8.0 |\\n| 800 | 8.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It increases rapidly with increasing substrate temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 600 and 800 K.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the substrate temperature increases from 400 to 600 K, the tungsten nitride film thickness deposited during three AB cycles rises rapidly, indicating that the surface reactions are becoming more efficient. In this lower temperature regime, FTIR measurements suggest that the half-reactions do not fully complete, and may even result in the formation of a WF₆:NH₃ adduct species. Once the temperature exceeds 600 K, the deposited film thickness stabilizes and increases only slightly up to 800 K. This plateau corresponds to approximately 2.5 Å per AB cycle, consistent with the formation of a W₂N monolayer and confirms that the surface half-reactions proceed to completion in this higher temperature range.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_33_figure_3.jpg","caption":"$0.9\\mu \\mathrm{mol}\\mathrm{cm}^{-2}$ .b, Growth rate of cobalt at $300^{\\circ}C$ as a function of hydrogen dose; the cobalt dose was fixed at 2 nmol $\\mathbb{C}\\mathbb{m}^{-2}$ Figure 3 Data showing that the thicknesses of copper films approach a saturated value as the doses of the precursors are increased. a, Growth rate of copper at $250^{\\circ}C$ as a function of copper precursor dose; the hydrogen dose was fixed at $3\\mu \\mathrm{mol}\\mathrm{cm}^{-2}$ . b, Growth rate of copper at $250^{\\circ}C$ as a function of hydrogen dose; the copper dose was fixed at $4\\mathrm{nmol}\\mathrm{cm}^{-2}$ .","id":"train/atomic-layer-deposition/experimental-usecase/33/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/33/figure_3","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"line chart"},{"panel_id":"d","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/BOOYONG S. LIM et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":1417,"height":1189,"image_format":"jpeg","image_sha256":"d4e57a3a4c610036481dc05c5f75df0942acbf51cbc42bf2da87647548e2e6a1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":24,"y":10,"width":657,"height":450},{"panel_id":"b","x":751,"y":8,"width":665,"height":562},{"panel_id":"c","x":24,"y":491,"width":666,"height":548},{"panel_id":"d","x":749,"y":603,"width":659,"height":538}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Panel (a) shows the growth rate increases with precursor temperature and plateaus at ~0.045 Å/cycle above 60 °C.\"},{\"panel_id\":\"b\",\"text\":\"Panel (b) demonstrates that increasing pulse time beyond 2 s does not further increase the growth rate, indicating saturation behavior.\"},{\"panel_id\":\"c\",\"text\":\"Panel (c) shows a similar saturation with hydrogen pressure—growth rate reaches a maximum of ~0.045 Å/cycle at 2 atm.\"},{\"panel_id\":\"d\",\"text\":\"Panel (d) highlights the effect of H₂ dose, where a minimum threshold is needed to initiate growth, followed by saturation. These trends collectively illustrate the self-limiting surface reactions characteristic of ALD processes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Precursor temperature (°C) | Growth rate (Å per cycle) |\\n|---------------------------|----------------------------|\\n| 50 | 0.025 |\\n| 55 | 0.035 |\\n| 60 | 0.045 |\\n| 65 | 0.045 |\\n| 75 | 0.045 |\"},{\"panel_id\":\"b\",\"text\":\"| Pulse time (s) | Growth rate (Å per cycle) |\\n|----------------|----------------------------|\\n| 1 | 0.25 |\\n| 2 | 0.35 |\\n| 3 | 0.35 |\\n| 4 | 0.35 |\"},{\"panel_id\":\"c\",\"text\":\"| H₂ pressure (atm) | Growth rate (Å per cycle) |\\n|-------------------|----------------------------|\\n| 0 | 0.00 |\\n| 1 | 0.025 |\\n| 2 | 0.045 |\\n| 3 | 0.045 |\"},{\"panel_id\":\"d\",\"text\":\"| H₂ pressure (atm) | Growth rate (Å per cycle) |\\n|-------------------|----------------------------|\\n| 0 | 0.00 |\\n| 1 | 0.025 |\\n| 2 | 0.045 |\\n| 3 | 0.045 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Precursor pulse time, Hydrogen pressure\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 0.045 Å per cycle.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plateau observed in each panel reflects the self-limiting nature of atomic layer deposition (ALD). In ALD, once all available reactive sites on the substrate surface are saturated during a precursor pulse, further increases in precursor supply (by time, dose, or temperature) do not result in additional growth. This ensures precise thickness control and uniform film coverage. For example, once sufficient H₂ pressure or dose is supplied to reduce surface intermediates, additional hydrogen does not increase growth, maintaining a constant growth per cycle.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_33_figure_4.jpg","caption":"Figure 4 The linear relationship between Co film thickness on $\\mathrm{SiO}_2$ and the number of deposition cycles at $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/33/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/33/figure_4","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/BOOYONG S. LIM et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":658,"height":531,"image_format":"jpeg","image_sha256":"5dc54da2d7aed122fd8748ab583bd2d9a92b1e576a906ae93d8b31881627cb6e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":658,"height":531}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a linear relationship between the number of ALD cycles and the resulting film thickness in angstroms (Å). As the number of cycles increases from 0 to 3000, the film thickness increases proportionally from approximately 5 Å to 120 Å. This linear trend, supported by error bars, demonstrates a consistent growth-per-cycle (GPC) rate, which is a key indicator of controlled and repeatable deposition in ALD processes\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle number | Thickness (Å) |\\n|---|---|\\n| 0 | 5 |\\n| 100 | 10 |\\n| 1000 | 40 |\\n| 2000 | 80 |\\n| 3000 | 120 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The linear increase in film thickness with cycle number indicates a highly controlled atomic layer deposition (ALD) process where the growth-per-cycle (GPC) remains constant over time. This suggests that each ALD cycle deposits a uniform layer with no saturation or deviation, highlighting the process repeatability and reliability, which are essential for precise thickness control in thin-film applications\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"40 Å.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Linear trend between cycle number and thickness, Small error bars across all data points\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_figure_11.jpg","caption":"Figure 11. Average oxidation state of manganese determined from the TEY XANES (black squares).","id":"train/atomic-layer-deposition/experimental-usecase/38/figure_11","sample_id":"atomic-layer-deposition/experimental-usecase/38/figure_11","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":517,"height":433,"image_format":"jpeg","image_sha256":"7c6f3e8c252caef1e0ccf260d1de6272269cdd3fc7ed4119914eddabd5f00985","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":517,"height":433}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates a progressive decrease in the average manganese oxidation state from ~3.7 to ~2.5 with increasing lithiation cycles, confirming lithium ion insertion into the lattice. This evolution indicates a transition from the initial MnO₂ phase through the LiMn₂O₄ spinel regime, followed by degradation toward an inactive MnO rock-salt–like surface state at high cycle numbers.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Amount of lithium cycles | Mn average oxidation state |\\n|--------------------------|----------------------------|\\n| MnO₂ (reference) | ~3.8 |\\n| 10 | ~3.7 |\\n| 50 | ~3.6 |\\n| 100 | ~3.25 |\\n| 200 | ~3.3 |\\n| 200 + A | ~3.1 |\\n| 300 | ~2.9 |\\n| 300 + A | ~2.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The oxidation state of Mn decreases as the lithium concentration (the amount of lithium cycles in this case, as is shown in the figure) increases.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The MnO2 sample shows an average oxidation state value close to 3.7, which decreases as the number of lithium cycles increases, as does the value for annealed samples ( after 200 and 300 cycles).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The annealed sample with 300 cycles of lithium.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Depending on the number of lithium cycles and post-treatment (with or without annealing), it is possible to produce different species (i.e. different oxidation states of Mn).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The data suggests that the undoped MnO2 does not have an oxidation state of 4+, indicating that it is not exactly MnO2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The number of lithium cycles should roughly be around 60.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"More lithium means that oxygen is not only bonded to manganese anymore but also to lithium, lowering the oxidation state of manganese.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both for 200 and 300 cycles of lithium the oxidation state decreases after an anneal.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The oxidation state is extracted from TEY XANES measurements by comparing the Mn absorption edge position and spectral shape with reference compounds of known oxidation state. This allows an average Mn valence to be assigned for each lithium cycling condition.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Mn oxidation state decreases as the number of lithium cycles increases.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It decreases slightly, from about ~3.25 to ~3.1–3.15.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Oxidation states near ~2.5 imply significant Mn³⁺ content, which can drive Jahn–Teller distortion, lattice strain, and eventual capacity fading. This highlights a trade-off between lithiation depth and structural stability.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It decreases from ~+3.7 in pristine MnO₂ to ~+2.5 in 300cLi-MnO₂-600, reflecting progressive reduction of Mn⁴⁺ to Mn³⁺ (and possibly Mn²⁺) upon lithium intercalation.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The XANES edge position is affected by factors beyond simple valence, including bond lengths, coordination geometry, and covalent/ionic character. The presence of Jahn-Teller active Mn³⁺ ions distorts the local structure, contributing to the apparent low oxidation states.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Annealed samples—200+A was annealed at 600°C and 300+A at 600°C for 10 min under N₂.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. Despite having near-stoichiometric Li₁.₁Mn₂O₄ composition, the measured oxidation state (~2.9–3.0) is below the expected +3.5, possibly due to impurity phases or structural distortions.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Perform 100 charge-discharge cycles.\\n\\nDisassemble in glovebox.\\n\\nClean and dry electrode.\\n\\nTransfer air-free to beamline.\\n\\nAlign and measure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Annealed samples show higher Mn oxidation states, indicating better structural recovery and slower degradation than non‑annealed cycled electrodes.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mn oxidation decreases toward +3 with cycling due to increased Mn³⁺. This leads to Jahn‑Teller distortion, structural instability, and capacity fade.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The steady decline in oxidation state suggests predictable, cycle‑dependent degradation, enabling reliable lifetime estimates for LiMn₂O₄ batteries.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. valence of the absorbing atom\\n2. structural variations\\n3. ligand type \\n4. geometry\\n5. coordination number\\n6. bond lengths\\n7. covalent or ionic character of the bonds\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300cLi−MnO2 and 300cLi−MnO2-600\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The determination of the oxidation states was also attempted from the average Mn−O bond lengths obtained from the EXAFS results. The analysis was based on the bond valence model50,51 where the oxidation state of an ion is correlated to the nearest neighbor distance in the metal−ligand bond. The oxidation states determined by this method varied in the range of +4 to +3.5, but without any correlation to the lithium concentration.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"+3.75.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"+2.5.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Although the trend is as expected, the measured oxidation states are unrealistically low. However, in addition to the valence of the absorbing atom, structural variations, ligand type, geometry, coordination number, bond lengths, and the covalent or ionic character of the bonds are known to have effects on the chemical shifts in the absorption spectra, which might affect the results and cause the unrealistically low oxidation states. The very low oxidation states of 300cLi−MnO2 and 300cLi−MnO2-600 could arise from some unexpected behavior related to 300cLi− MnO2, which was also noticed earlier in the shape of the XAS spectrum.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"+3.5.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 + A.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Annealing generally lowers the average oxidation state of manganese compared to the non-annealed samples.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The effect of lithium incorporation into the manganese film is a reduction in the average oxidation state of manganese. As the number of lithium cycles increases from 0 to 300, the manganese oxidation state steadily decreases from approximately +3.7 down to +2.5. This is indicating that incorporation of lithium causes manganese to gain electrons.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50 cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The average manganese oxidation state decreases steadily as the number of lithium cycles increases, indicating progressive reduction of Mn from values characteristic of MnO₂ toward lower oxidation states at higher lithium loadings.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ 2.5\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"More Li uptake, Mn reduction, Shift toward LiMn₂O₄ phase\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately +2.5.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"MnO₂ starts at a high oxidation state (~+3.8), Oxidation state gradually decreases with increasing lithium content, 100cLi−MnO₂ and 200cLi−MnO₂ show intermediate oxidation states (~+3.3 to +3.2), Annealed samples show slightly lower oxidation states than unannealed ones, 300cLi−MnO₂-600 exhibits the lowest oxidation state (~+2.5)\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The manganese oxidation state strongly influences the structural stability, electronic structure, and electrochemical behavior of Li-Mn-O materials. A decreasing oxidation state with increasing lithium content reflects changes in charge compensation and local bonding environments, which can affect lithium storage capacity, phase stability, and degradation mechanisms. Identifying unusually low oxidation states, such as those observed in highly lithiated and annealed samples, helps highlight potential structural distortions or impurity phases that may impact long-term performance in applications like lithium-ion batteries.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The average oxidation state of manganese was determined from TEY XANES measurements.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_49_figure_5.jpg","caption":"Figure 5. a) Photocurrent density and response of the TiNTs (purple) and $\\mathrm{MoS_2 / TiNTs}$ (red, with 200 ALD cycles $\\mathrm{MoS_2}$ deposition). The photocurrent was recorded in $0.5\\mathrm{M}$ $\\mathrm{Na_2SO_4}$ electrolyte with a $0.5\\mathrm{V}$ external bias potential in the dark and under $430~\\mathrm{nm}$ light irradiation. b) Nyquist and c) MottSchottky plots of TiNTs (purple) and $\\mathrm{MoS_2 / TiNTs}$ heterostructure (red). The Nyquist plots were recorded under $430~\\mathrm{nm}$ light irradiation.","id":"train/atomic-layer-deposition/experimental-usecase/49/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/49/figure_5","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"spectra chart"},{"panel_id":"c","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/Shen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":1008,"height":317,"image_format":"jpeg","image_sha256":"a650741ae4f81120e8cb27883c7e159bc32f64389ca77c7a9a2b888d8753496e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":3,"width":336,"height":312},{"panel_id":"b","x":348,"y":9,"width":328,"height":304},{"panel_id":"c","x":673,"y":6,"width":333,"height":308}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares the photoelectrochemical (PEC) performance of bare Titanium Oxide Nanotubes (TiNTs, purple) and MoS₂-coated TiNT heterostructures (MoS₂/TiNTs, red). Under chopped light illumination, the MoS₂/TiNT heterostructure exhibits a significantly enhanced photocurrent density of approximately 30 μA/cm², compared to about 10 μA/cm² for bare TiNTs. This nearly threefold increase indicates improved light absorption, charge separation, and carrier transport due to the heterostructure formation.\"},{\"panel_id\":\"b\",\"text\":\"The Nyquist plot shows that the MoS₂/TiNTs sample has a much smaller semicircle radius in the high-frequency region than bare TiNTs. This reflects a lower charge-transfer resistance (R_ct) at the electrode–electrolyte interface, indicating faster interfacial charge transfer.\"},{\"panel_id\":\"c\",\"text\":\"Both samples exhibit positive slopes, confirming n-type semiconducting behavior. The MoS₂/TiNT heterostructure shows a smaller slope than bare TiNTs, corresponding to a higher donor density (N_d), which contributes to enhanced electrical conductivity and improved PEC performance.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Current Density (µA/cm²) |\\n|---------:|--------------------------:|\\n| 100 | 30 |\\n| 200 | 27 |\\n| 300 | 26 |\\n| 400 | 25 |\\n| 500 | 25 |\\n| 600 | 24 |\"},{\"panel_id\":\"b\",\"text\":\"| Z′ (kΩ) | Z″ (kΩ) | Materials |\\n|---|---| -- |\\n| 0.0 | 0.0 | TiNTs |\\n| 0.0 | 00 | MoS2/TiNTs |\\n| 0.1 | 0.4 | TiNTs |\\n| 0.1 | 0.1 | MoS2/TiNTs |\\n| 0.2 | 0.7 | TiNTs |\\n| 0.2 | 0.25 | MoS2/TiNTs |\\n| 0.3 | 0.1 | TiNTs |\\n| 0.3 | 0.3 | MoS2/TiNTs |\\n| 0.4 | -- | TiNTs |\\n| 0.4 | 0.3 | MoS2/TiNTs |\\n| 0.5 | -- | TiNTs |\\n| 0.5 | 0.29 | MoS2/TiNTs |\\n| 0.6 | -- | TiNTs |\\n| 0.6 | 0.26 | MoS2/TiNTs |\\n| 0.7 | -- | TiNTs |\\n| 0.7 | 0.22 | MoS2/TiNTs |\\n| 0.8 | -- | TiNTs |\\n| 0.8 | 3.4 | MoS2/TiNTs |\\n| 0.9 | -- | TiNTs |\\n| 0.9 | 0.57 | MoS2/TiNTs |\\n| 1.0 | -- | TiNTs |\\n| 1.0 | 0.8 | MoS2/TiNTs |\"},{\"panel_id\":\"c\",\"text\":\"| E (V) vs. (Ag/AgCl) | 1/C² (cm⁴µF²) | Material |\\n|---|---|---|\\n| -1.0 | 0.00 | TiNTs |\\n| -1.0 | 0.00 | MoS2/TiNTs |\\n| -0.5 | 0.00 |TiNTs |\\n| -0.5 | 0.00 | MoS2/TiNTs |\\n| -0.53 | 0.00 |TiNTs |\\n| -0.53 | 0.00 | MoS2/TiNTs |\\n| 0.0 | 0.9 |TiNTs |\\n| 0.0 | 0.02 | MoS2/TiNTs |\\n| 0.5 | 0.11 |TiNTs |\\n| 0.5 | 0.05 | MoS2/TiNTs |\\n| 1.0 | 0.13 | TiNTs |\\n| 1.0 | 0.06 | MoS2/TiNTs |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The bare TiNTs exhibit a peak photocurrent of approximately 10 μA/cm², whereas the MoS₂/TiNTs heterostructure reaches about 30 μA/cm², corresponding to a threefold enhancement. The immediate drop of current to zero when the light is switched off confirms that the current is purely photo-generated. This behavior demonstrates effective photo-switching and confirms the device functions as a photo-anode driven entirely by illumination.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The peak photocurrent of the MoS₂/TiNTs decreases slightly from approximately 32 to 20 µA/cm² over the measurement period. This gradual photocurrent decay indicates limited long-term stability, suggesting that the MoS₂ layer may undergo slow degradation, oxidation, or partial delamination under sustained illumination and applied bias in the Na₂SO₄ electrolyte.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The MoS₂/TiNTs sample (red) exhibits higher conductivity. This is evidenced by the flatter (smaller) slope of the red curve compared to the steeper purple curve. Since the carrier density (Nₙ) is inversely proportional to the slope of the Mott–Schottky plot, a smaller slope indicates a higher carrier density. The increased carrier density directly leads to improved electrical conductivity and enhanced photoelectrochemical performance.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The heterojunction facilitates charge transfer. The bare TiNTs show a large semicircle, indicating high charge-transfer resistance at the electrode–electrolyte interface. The MoS₂ coating forms a favorable band alignment with TiO₂, providing active sites that enhance interfacial charge transfer and reduce the resistance, resulting in a much smaller semicircle.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_52_figure_3.jpg","caption":"Figure 3. Saturation curves for remote plasma ALD of $\\mathrm{LiCOO_2}$ at $325^{\\circ}C$ (a) Growth rate as a function of $\\mathrm{LiO^4}$ Bu dosing time, while the $\\mathrm{CoCp_2}$ dosing time and the plasma exposure time are kept constant at $2\\mathrm{s}$ and $5\\mathrm{s}$ respectively. (b) Growth rate as a function of $\\mathrm{CoCp_2}$ dosing time, while the $\\mathrm{LiO^4}$ Bu dosing time and the plasma exposure time are kept constant at $2\\mathrm{s}$ and $5\\mathrm{s}$ respectively. The lines serve as guides to the eye.","id":"train/atomic-layer-deposition/experimental-usecase/52/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/52/figure_3","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/Donders et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":609,"height":886,"image_format":"jpeg","image_sha256":"c39addbbfa30afacec08423f0fbbfbdb91faaa1b68ef6328e5c644fe9e787420","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":5,"width":603,"height":427},{"panel_id":"b","x":1,"y":451,"width":603,"height":432}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The growth per cycle increases with increasing Li precursor dosing time until it plateaus.\"},{\"panel_id\":\"b\",\"text\":\"The growth per cycle shows a slight increase with increasing Co precursor dosing time, but remains relatively stable\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Li precursor dosing time (s) | Growth per cycle (nm) |\\n|---|---|\\n| 0 | 0.00 |\\n| 0.5 | 0.08 |\\n| 1 | 0.10 |\\n| 2 | 0.12 |\\n| 3 | 0.12 |\"},{\"panel_id\":\"b\",\"text\":\"| Co precursor dosing time (s) | Growth per cycle (nm) |\\n|---|---|\\n| 0 | 0.00 |\\n| 0.5 | 0.08 |\\n| 1 | 0.09 |\\n| 2 | 0.08 |\\n| 3 | 0.10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A plateau indicates that increasing precursor dosing time no longer increases the growth per cycle, which is consistent with surface saturation. In ALD terms, this suggests the surface reactions become self limiting once enough precursor has been supplied. Operating at or beyond the saturation point helps ensure reproducible growth and composition control.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"CoCp2 reaches saturation faster, because panel b levels off at a shorter dosing time than panel a. In panel b, the growth per cycle increases sharply and then becomes nearly constant by around the first second or less. In panel a, the curve continues rising over a broader dosing time range before leveling off.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The x axis in panel b is Co precursor dosing time (s), and the y axis in both panels is growth per cycle (nm).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"To avoid dose limited growth that would change the growth per cycle.\\n\\nTo improve run to run reproducibility by ensuring surface saturation.\\n\\nTo reduce sensitivity to small dosing time fluctuations during long depositions.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_52_figure_4.jpg","caption":"Figure 4. Thickness of $\\mathrm{LiCoO_2}$ on $\\mathrm{Si(100)}$ as a function of the number of ALD super-cycles, as measured with in situ spectroscopic ellipsometry. The used Co:Li dosing ratio is 4:1.","id":"train/atomic-layer-deposition/experimental-usecase/52/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/52/figure_4","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/Donders et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":556,"height":370,"image_format":"jpeg","image_sha256":"8a0473aba0d042fea8857b72f7093e918acd0f0679131c1deb078b0ef8515356","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":550,"height":364}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A line chart showing a linear relationship between the number of supercycles and thickness in nanometers\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of supercycles | Thickness (nm) |\\n|-----------------------|---------------|\\n| 0 | 0 |\\n| 50 | 20 |\\n| 100 | 40 |\\n| 150 | 60 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In situ spectroscopic ellipsometry\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Thickness increases roughly linearly with super cycle number. This indicates that the average thickness added per super cycle is approximately constant over the range shown. Such linearity is consistent with stable, repeatable growth during the super cycle process under the reported conditions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Si(100).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ratio refers to how many cycles of the Co containing sub process are applied relative to cycles of the Li containing sub process within the super cycle sequence. A 4:1 ratio means the Co process is applied more frequently than the Li process during growth. This is a process control parameter used to tune the film composition while maintaining stable thickness increase per super cycle.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_59_fig_9.jpg","caption":"FIG. 9. (Color online) The time-integrated intensity of the OES signal during the plasma step plotted as a function of the PDMAT dosing time in the ALD cycle. The OES signal at $388~\\mathrm{nm}$ is integrated over the $10\\mathrm{~s~H}_2 - \\mathrm{N}_2$ (98:2) plasma exposure time in the ALD cycle. The line serves as a guide to the eyes.","id":"train/atomic-layer-deposition/experimental-usecase/59/fig_9","sample_id":"atomic-layer-deposition/experimental-usecase/59/fig_9","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/Langereis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"59","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":608,"height":464,"image_format":"jpeg","image_sha256":"056617f5ac05c09e09744731b5e8e681e5d820f4af8a18e7862eed715035f054","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":604,"height":460}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between the integrated OES intensity (a.u.) versus the PDMAT dosing (s). Intensity increases with increasing dosing time up to approximately three second, after which it plateaus.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| PDMAT dosing (s) | Integrated OES intensity (a.u.) |\\n|------------------|--------------------------------|\\n| 0 | 760 |\\n| 1 | 825 |\\n| 2 | 875 |\\n| 3 | 900 |\\n| 4 | 860 |\\n| 5 | 875 |\\n| 7 | 880 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The OES signal at 388 is integrated for this plot.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The integrated OES intensity increases with the PDMAT dosing time, until it reached a plateau at around 4 s.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The highest integrated OES intensity values is 900 a.u., which is reached after 3 s od PDMAT dosing.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes, because after 3 s, it is possible to observe that the curve remains constant and the integrated OES intensity is based at 388 nm, where that bond can be found.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_66_figure_7.jpg","caption":"Figure 7. Frequency dependence of (a) dielectric constant $\\epsilon_{\\mathrm{r}}$ and (b) dielectric loss tan $\\delta$ and (c) capacitance-voltage characteristics of TM-doped $\\mathrm{ZnO}$ films.","id":"train/atomic-layer-deposition/experimental-usecase/66/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/66/figure_7","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/Paskaleva et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"66","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":663,"height":595,"image_format":"jpeg","image_sha256":"fc36d829be81d580b533e6685f94fb75d6a68c64284efbdff1203a27ef214194","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":321,"height":280},{"panel_id":"b","x":332,"y":3,"width":330,"height":272},{"panel_id":"c","x":135,"y":287,"width":390,"height":307}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This plot shows dielectric constant as a function of frequency. Dielectric constant (εr) decreases with increasing frequency for all materials (Co, Fe, Ni).\"},{\"panel_id\":\"b\",\"text\":\"Plot shows the tangent delta (tanδ) as a function of frequency where tangent decreases with increasing frequency for all materials (Co, Fe, Ni).\"},{\"panel_id\":\"c\",\"text\":\"Plot shows variation of capacitance (C) as a function of applied voltage for different frequencies (100kHz, 1MHz) and materials (Co, Fe, Ni).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| frequency (Hz) | dielectric constant, εr of Co | Fe | Ni |\\n| --- | --- | --- | --- | \\n| 103 | 50 | 50 | 75 |\\n| 104 | 50 | 50 | 50 |\\n| 105 | 50 | 40 | 30 |\\n| 106 | 50 | 20 | 10 |\"},{\"panel_id\":\"b\",\"text\":\"| frequency (Hz) | tanδ of Co | Fe | Ni |\\n| --- | --- | --- | --- | \\n| 103 | 800 | 200 | 200 | \\n| 104 | 400 | 100 | 100 | \\n| 105 | 200 | 50 | 50 | \\n| 106 | 80 | 20 | 20 |\"},{\"panel_id\":\"c\",\"text\":\"| Applied Voltage (V) | C (Co, 100kHz) | C (Fe, 100kHz) | C (Ni, 100kHz) | C (Co, 1MHz) | C (Fe, 1MHz) | C (Ni, 1MHz) |\\n|---|---|---|---|---|---|---|\\n| -4 | 220 | 230 | 480 | 40 | 50 | 70 |\\n| -2 | 230 | 260 | 500 | 45 | 55 | 75 |\\n| 0 | 200 | 320 | 520 | 50 | 60| 100 |\\n| 2 | 200 | 320 | 520 | 50 | 60 | 80 |\\n| 2 | 260 | 280 | 500 | 45 | 55 | 75 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the ZnO/Ni film, it is seen that there is another polarization mechanism, which is involved at f = 10^3−10^4 Hz and significantly increases εr in this frequency range. The most likely polarization mechanism, which adds to the net polarizability in the range 10^3−10^5 Hz, is the orientation (dipolar) polarization\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The dielectric response of the ZnO/Co film is significantly weaker than that of the other two films, εr is substantially smaller than that of ZnO/Ni and ZnO/Fe films; it is also smaller than that of pure ZnO layers. However, it should be noticed that the measurement of C−f curves is performed at a small voltage (0.3−0.5 V) where the capacitance of the ZnO/Co film has the minimum in the C−V curves, while that of the other two films reaches its maximum\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A strong frequency dependence of the dielectric constant is observed, especially for Fe- and Ni-doped ZnO. Various polarization mechanisms (ionic, orientation, and space\\ncharge) can exist in the layers and give rise to an increased polarization (hence εr) at a certain frequency\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"All layers have a relatively high dielectric loss due to the increased conductivity of the layers.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_12_figure_8.jpg","caption":"Figure 8. BOMD simulations performed on adsorbed precursors in the presence of five layers of water.","id":"train/atomic-layer-deposition/simulation-usecase/12/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/12/figure_8","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. Mukhopadhyay et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":670,"height":486,"image_format":"jpeg","image_sha256":"ce80e9c64e91c5bd0a26d36be500e55fe2062a2f576ff10a2fb8d0fc2ede1327","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":1,"width":665,"height":479}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows a stepwise increase in temperature over time, starting at 100 K and reaching a plateau at 300 K and 580 K.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (ps) | Temperature (K) |\\n|---|---|\\n| 0 | 100 |\\n| 2 | 250 |\\n| 4 | 300 |\\n| 6 | 480 |\\n| 8 | 580 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Born-Oppenheimer Molecular Dynamics (BOMD)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The simulations start at a temperature of 100 K, and then increase over time until they reach approximately 580 K.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 fs for all the MD runs.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The temperature starts to increase at 5 ps and reaches a plateau of 580 K at approximately 7 ps.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_12.jpg","caption":"Figure 12: Computed band gap with regards to the Pb content in the compound [94].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_12","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":573,"height":481,"image_format":"jpeg","image_sha256":"966769b0c24ea10bffea8355aee527c12d8e7edb17c9b1eb5f0d2dbb6f86a9aa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":1,"width":562,"height":474}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line graph shows the variation in computed bandgap (eV) as a function of lead (Pbₓ) in Sn₁₋ₓPbₓO. The band gap seems to increase with increase in (Pbₓ) content. This trend, calculated using Density Functional Theory (DFT), demonstrates that lead doping is an effective method for tuning the electronic properties of tin oxide without creating defect states within the band gap.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| x: Sn_{1-x}Pb_xO | band gap (eV) |\\n|---|---|\\n| 0 | 0.4 |\\n| 0.2 | 0.55 |\\n| 0.4 | 0.8 |\\n| 0.6 | 1.1 |\\n| 0.8 | 1.25 |\\n| 1 | 1.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Density Functional Theory (DFT) was used for calculations and investigate the electronic properties such as band gap here.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The band gap increases linearly as the Pb content (x) increases from 0 to 1.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Introducing 2% Sn vacancies increases SnO's band gap by 0.5 eV. This shows that defects can tune properties but often introduce disruptive gap states. In contrast, Pb alloying tunes the band gap linearly from 0.4 to 1.4 eV without creating mid-gap defect states, offering a cleaner method for electronic band engineering.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No Defect States: Alloying avoids introducing electronic trap states within the band gap, which can degrade charge carrier mobility and device efficiency.\\n\\nPredictable Tuning: The band gap changes linearly with composition, allowing for precise and predictable control over optical absorption and emission wavelengths.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_20.jpg","caption":"Figure 20: Fraction of nitrogen of deposited films at a temperature of $1,800\\mathrm{K}$ with various nitrogen-to-aluminium flux ratios starting at 0.8–2.8 [195].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_20","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_20","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_20.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_20.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":653,"height":495,"image_format":"jpeg","image_sha256":"d1edb38267ec92b1df9adbec0c890c9c9365ab2ea070a48275e1622d5d31013f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":650,"height":486}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart image represents the fraction of Nitrogen(N) in terms of percentage as a function of various nitrogen-to-aluminium flux ratios (N : Al), values of a range from 0.8 to 2.8. The values of N fraction steadily seems to increase till 2 and then saturates at close to 50% of N fraction. The image also shows the molecular representation computed using Molecular dynamics at temperature of 1800K\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| N : Al flux ratio | N fraction (%) |\\n|---|---|\\n| 0.8 | 42 |\\n| 1.2 | 44 |\\n| 1.6 | 49 |\\n| 2.0 | 51 |\\n| 2.4 | 51 |\\n| 2.8 | 52 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Growth Rate: Decreases as temperature increases.\\n\\nCrystallinity: Enhances significantly up to 1,800 K, then saturates between 1,800 K and 2,000 K.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The N-deficient route (0.8) is more detrimental. The text explicitly links good crystallinity to a \\\"near 50% nitrogen fraction,\\\" and the visuals confirm that significant N-deficiency destroys the lattice order.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A higher N:Al flux ratio delivers more N atoms per Al atom to the growth surface, increasing the N fraction in the film toward the ideal 50%. The caption states that good crystallinity is linked to this near-stoichiometric composition. The cause is that a stoichiometric film minimizes point defects (Al or N vacancies) and anti-site defects, allowing atoms to find proper lattice positions and form a well-ordered crystal.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the reactor must be capable of delivering a highly N-rich environment (flux ratio >2:1) to achieve stoichiometric films. For a deep-UV LED, the near-perfect crystallinity resulting from this stoichiometry is critical to minimize defect-related non-radiative recombination and ensure high internal quantum efficiency for efficient light emission.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_5.jpg","caption":"Figure 5: Density functional theory (GGA/PBE-D3) [96] of minimum energy paths (MEPs) needed to adsorb Hacac on (a) aluminium oxide $(\\mathrm{Al}_2\\mathrm{O}_3)$ and (b) silicon dioxide $(\\mathrm{SiO}_2)$ surfaces [52].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_5","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":1178,"height":595,"image_format":"jpeg","image_sha256":"b7acc8d9492b66000b6a4b822fdc5aae126e8272a594c40c83d99b7ac1c674b2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":606,"y":3,"width":569,"height":583},{"panel_id":"a","x":2,"y":3,"width":590,"height":580}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The diagram represent the Density Functional Theory (DFT)-calculated reaction energy values comparing the chemisorption of Hacac on Al₂O₃ surface. The diagrams show the activation energy (Eₐ) and reaction energy (ΔE) for the ligand-exchange reaction where Hacac replaces a surface hydroxyl group.\"},{\"panel_id\":\"b\",\"text\":\"The diagram represent the Density Functional Theory (DFT)-calculated reaction energy values comparing the chemisorption of Hacac on SiO₂surfaces. The diagrams show the activation energy (Eₐ) and reaction energy (ΔE) for the ligand-exchange reaction where Hacac replaces a surface hydroxyl group. The key difference is that the reaction is exothermic and low-barrier on Al₂O₃ (ΔE = -0.49 eV, Eₐ = 0.01/0.25 eV) but endothermic and high-barrier on SiO₂ (ΔE = +0.98 eV, Eₐ = 2.35 eV).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction step | Energy (eV) |\\n| ------ | ------- |\\n| Physisorbed state | 0.05 |\\n| Transition State | 0.25 |\\n| Chemisorbed Product State | -0.49 |\"},{\"panel_id\":\"b\",\"text\":\"| Reaction step | Energy (eV) |\\n| ------ | ------- |\\n| Physisorbed state | 0.05 |\\n| Transition State | 2.25 |\\n| Chemisorbed Product State | 0.98 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It implies the Al–O(acac) bond is significantly stronger than the Si–O(acac) bond relative to their respective starting surface OH bonds.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It suggests performing DFT calculations of the inhibitor's adsorption reaction energy (ΔE) and activation energy (Eₐ) on both target and non-target surfaces. A successful selective process will likely require a large thermodynamic and kinetic preference (exothermic/low-barrier on target, endothermic/high-barrier on non-target) similar to the Al₂O₃/SiO₂ case shown here. This computational screen can rapidly identify promising inhibitor candidates before costly experimentation.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Physisorbed State: Hacac near the surface (0 eV reference).\\n\\n, Transition State: Peak at ~0.25 eV (Eₐ).\\n\\n, Chemisorbed Product State: Al(acac)⁺ + H₂O(g) at -0.49 eV (ΔE).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The very low Eₐ on Al₂O₃ (0.25 eV) means Hacac reacts easily at low temperature, while the much higher Eₐ on SiO₂ (2.35 eV) means it barely reacts at all under the same conditions. This large gap ensures that at typical ALD temperatures (~250–300 °C), Hacac will strongly chemisorb on Al₂O₃ but remain essentially inactive on SiO₂. As a result, the process naturally becomes highly selective without needing extreme temperatures or additional steps.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_27_figure_6.jpg","caption":"Figure 6. Simulated (a) growth per cycle and (b) mass density of deposited $\\mathrm{SiO_2}$ films as a function of the probability $p_{\\mathrm{P2}}$ .","id":"train/atomic-layer-deposition/simulation-usecase/27/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/27/figure_6","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/Martin Becker et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":1203,"height":383,"image_format":"jpeg","image_sha256":"18fb91c64e56d826023d2f80411721f184ee6923ae3c39ec5a9c84b3b902b983","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":38,"y":11,"width":562,"height":372},{"panel_id":"b","x":637,"y":9,"width":564,"height":373}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows a non-linear trend where the growth per cycle increases to a maximum around pP₂ = 0.25–0.5 and then decreases at higher probabilities.\"},{\"panel_id\":\"b\",\"text\":\"shows density steadily rising with increasing pP₂, indicating denser films when P₂-type surface terminations dominate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| occupation probability pP2|growth per cycle [Å]|\\n|--------------------------------------|--------------------|\\n|0|2.2|\\n|0.25|2.7|\\n|0.5|2.6|\\n|0.75|2.5|\\n|1|2.0|\"},{\"panel_id\":\"b\",\"text\":\"| occupation probability pP2|density [g/cm3]|\\n|--------------------------------------|--------------------------|\\n|0|1.6|\\n|0.25|2.3|\\n|0.5|2.4|\\n|0.75|2.5|\\n|1|2.7|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The trends show that lower to mid-range occupation probabilities (around pP₂ = 0.25–0.50) yield higher growth per cycle, which can improve deposition throughput. Meanwhile, the steady increase in density with higher pP₂ suggests that P₂-rich growth pathways produce more compact and potentially higher-quality SiO₂ films. By balancing these opposing trends, researchers can tune PEALD process conditions to achieve films with optimal thickness, uniformity, and mechanical stability, leading to better performance in microelectronic and optical applications\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The maximum growth per cycle occurs at pP₂ ≈ 0.25.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the growth per cycle changes significantly with varying pP₂.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Growth per cycle (Å/cycle), Film density (g/cm³)\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_41507260afda38f50f2d4921e128ba2a885bf7c74e3e0c35c21b3df5b9ecfbf7.jpg","caption":"Fig. B1 - Experimental outlet pressure monitoring during various ALD cycles, as measured by the Pirani gauge.","id":"train/atomic-layer-deposition/simulation-usecase/32/41507260afda38f50f2d4921e128ba2a885bf7c74e3e0c35c21b3df5b9ecfbf7","sample_id":"atomic-layer-deposition/simulation-usecase/32/41507260afda38f50f2d4921e128ba2a885bf7c74e3e0c35c21b3df5b9ecfbf7","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/41507260afda38f50f2d4921e128ba2a885bf7c74e3e0c35c21b3df5b9ecfbf7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/41507260afda38f50f2d4921e128ba2a885bf7c74e3e0c35c21b3df5b9ecfbf7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":1017,"height":748,"image_format":"jpeg","image_sha256":"0b2e8e6803cd45447f8be26a9ac7072b34f50267ae33c4c742784898e811af55","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":1012,"height":743}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the experimental outlet pressure over time for two substances, H₂O and TMA, with distinct peaks and troughs monitored using pirani gauge.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Outlet Pressure (Torr) |\\n|----------|--------------------------|\\n| 0 | 0.049 |\\n| 5 | 0.075 |\\n| 10 | 0.058 |\\n| 15 | 0.075 |\\n| 20 | 0.049 |\\n| 25 | 0.075 |\\n| 30 | 0.058 |\\n| 35 | 0.075 |\\n| 40 | 0.049 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The experimental reactor outlet pressure was monitored via the Pirani gauge during various ALD cycles, as deposition took place. The base pressure of the process i.e the system pressure during the purge step of the ALD cycle, is set at 50 mTorr, measured via the Pirani gauge.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Pirani gauge is calibrated for nitrogen (N2), while the inert gas used for the ALD process is Ar. Typically, the pressure reading by a Pirani gauge is multiplied by a correction factor, different for each gas, in order to calibrate the measurements to the real pressure value. In this study, these correction factors are unknown\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In order to have a value for the correction factor of Ar, the reactor outlet pressure was measured, for a varying Ar inlet, using a constant butterfly valve opening at the outlet.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_13.jpg","caption":"Figure 13. Multiscale CFD plots illustrating the surface coverage (\\%) progression as a function of time for (a) 0.1 mole fraction Hacac adsorption, (b) 0.5 mole fraction BDEAS adsorption, (c) 0.1 mole fraction $\\mathrm{O_3}$ adsorption. Evaluated multiscale process times to reach full surface coverage were longer than observed mesoscopic model process times conducted from prior work [34].","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_13","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_13","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":1061,"height":930,"image_format":"jpeg","image_sha256":"4626101f5fdf3e62753d1c2996be95e3d9416f8992e6463026ac598c8126020b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":9,"width":498,"height":385},{"panel_id":"b","x":547,"y":9,"width":513,"height":383},{"panel_id":"c","x":273,"y":488,"width":504,"height":387}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Hacac surface coverage (%) over time during adsorption (0.1 mole fraction), reaching full coverage at ~3.77 s. The progression reflects non-linear adsorption behavior due to integration of macroscopic fluid dynamics with mesoscopic surface kinetics.\"},{\"panel_id\":\"b\",\"text\":\"BDEAS surface coverage (%) over time during adsorption (0.5 mole fraction), reaching full coverage at ~6.99 s. Slower adsorption is influenced by pressure depletion zones and reagent interactions in the fluid phase.\"},{\"panel_id\":\"c\",\"text\":\"O₃ surface coverage (%) over time during adsorption (0.1 mole fraction), reaching full coverage at ~3.72 s. The curves indicate non-linear adsorption behavior and are consistent with experimental dosage times reported in the literature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s)|Hacac Coverage (%)|\\n|---------|------------------|\\n|0.0|0|\\n|1.0|25|\\n|2.0|60|\\n|3.0|90|\\n|3.77|100|\"},{\"panel_id\":\"b\",\"text\":\"| Time (s)|BDEAS Coverage (%)|\\n|---------|------------------|\\n|0.0|0|\\n|2.0|20|\\n|4.0|50|\\n|6.0|85|\\n|6.99|100|\"},{\"panel_id\":\"c\",\"text\":\"| Time (s)|O₃ Coverage (%)|\\n|---------|---------------|\\n|0.0|0|\\n|1.0|40|\\n|2.0|80|\\n|3.0|95|\\n|3.72|100|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"By analyzing the coverage progression over time, researchers can adjust operating conditions such as reagent dosage, surface pressure, and wafer exposure time to ensure full coverage without overexposure. Understanding that BDEAS requires longer process times due to slower adsorption allows for precise control of deposition thickness and prevents oversaturation. Additionally, recognizing the impact of pressure depletion zones and species interactions informs reactor design modifications, such as improved purge streams, to maintain reagent availability and optimize surface coverage kinetics for all adsorption steps.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The BDEAS step requires the longest process time, reaching full coverage at 6.99 seconds.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The integration introduces pressure depletion zones and species interactions that reduce adsorption rates, leading to longer process times in the multiscale CFD simulations compared to prior mesoscopic models.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Pressure depletion zones in the reactor, Reagent dilution and reduced surface exposure, Repulsive interactions between species in the fluid phase, Partitioning of the wafer into discrete sections for kMC simulations, which reduces spatial resolution\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_7.jpg","caption":"Figure 7. Hacac partial pressure over time on a node in the mesh. As the wafer rotates, the pressure rises around $0.8\\mathrm{s}$ to reach the plateau and goes to 0 around $3.6\\mathrm{s}$ . The length of the straight line in red is defined as the exposure time.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_7","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":495,"height":392,"image_format":"jpeg","image_sha256":"15c0a8949f2ad8e91a8f7a25fa06e0780a90994c205cc27dfbf2032da9356568","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":495,"height":392}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 7 shows a line chart of Hacac partial pressure at a mesh node over time as a wafer rotates. The pressure rises around 0.8 s, reaches a plateau, and falls to zero around 3.6 s. The red line segment highlights the exposure time, representing the duration a wafer section is exposed to the reactant. This figure demonstrates how wafer rotation and reaction zone geometry determine exposure time distribution, which is crucial for achieving uniform surface coverage.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s)|Hacac Pressure (Pa)|\\n|---------|-------------------|\\n|0|0|\\n|0.8|60|\\n|1.5|60|\\n|3.6|0|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Wafer rotation speed (angular velocity), Geometry of the reaction zone, Position of the wafer in the reactor, Distribution and flow of reactant gases\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Increasing the angular velocity reduces the exposure time for each wafer section, while decreasing it extends the exposure time, affecting reactant coverage uniformity.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The exposure time is determined by the duration a wafer section is exposed to the reactant as it passes through a reaction zone while mounted on the rotating plate. The Hacac partial pressure rises to a plateau as the section enters the reaction zone and drops to zero as it exits. This timing depends on the wafer’s angular velocity and the shape of the reaction zone, ensuring each section receives controlled exposure for proper surface coverage.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Hacac partial pressure rises to the plateau around 0.8 s and drops back to zero around 3.6 s.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_43_figure_3.jpg","caption":"Figure 3. (a) In situ SE monitoring of $\\mathrm{Al}_2\\mathrm{O}_3$ ALD on the $\\mathrm{Ge:H}$ surface; the inset enlarges the segment in the green box. (b) TMA adsorption and growth per cycle as a function of ALD cycles; the TMA adsorption baseline (red dash line) is $\\sim 2.2\\mathrm{\\AA}$ , and the GPC baseline (blue dash line) is $\\sim 0.86\\mathrm{\\AA}$ . (c) AFM images at different $\\mathrm{Al}_2\\mathrm{O}_3$ ALD stages.","id":"train/atomic-layer-deposition/simulation-usecase/43/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/43/figure_3","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/Yuanxia Zheng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":625,"height":511,"image_format":"jpeg","image_sha256":"a141efa52ff72801217a42650663d202e6d5b97c5b36a361571a41178f37f66e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":29,"width":261,"height":218},{"panel_id":"b","x":306,"y":24,"width":314,"height":227},{"panel_id":"c","x":1,"y":276,"width":622,"height":233}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plots show how an Al₂O₃ film grows on Ge during atomic layer deposition (ALD) using TMA and H₂O. The chart a tracks film thickness vs time, Film thickness increases nearly linearly with time, with small periodic steps corresponding to individual ALD cycles driven by alternating TMA and H₂O pulses on Ge(100). The inset highlights that each TMA/H₂O sequence produces a distinct thickness increment, consistent with self‑limiting layer‑by‑layer ALD growth.\"},{\"panel_id\":\"b\",\"text\":\"the right multi axis chart tracks TMA adsorption and growth per cycle vs ALD cycles. TMA adsorption (red circles, left axis) steadily increases with cycle number but remains below a marked saturation baseline, indicating sub‑monolayer adsorption per cycle. Growth per cycle (blue squares, right axis) also increases with cycle number yet stays below its baseline, implying that while the process becomes more efficient over time, it does not reach the ideal saturated growth rate within 30 cycles.\"},{\"panel_id\":\"c\",\"text\":\"Microscopy images of Ge:H surface at different ALD cycle counts, showing increasing roughness with more cycles.{ Ge:H -> 0.294 nm , 15 ALD Cycles -> 0.439 nm , 27 ALD Cycles -> 0.626 nm }\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (min) | Thickness (Å) |\\n|---|---|\\n| 0 | 0.8 |\\n| 3 | 1.5|\\n| 6 | 2.3 |\\n| 9 | 4.3 |\\n| 12 | 7|\\n| 15 | 10 |\"},{\"panel_id\":\"b\",\"text\":\"| ALD cycles | y | TMA adsorption (Å)/Growth per cycle (Å) |\\n|---|---|---|\\n| 0 | 0 |TMA adsorption (Å) |\\n| 0 | 0 |Growth per cycle (Å) |\\n| 5 | 0.2 | TMA adsorption (Å) |\\n| 5 | 0.0076 | Growth per cycle (Å) |\\n| 10 | 0.5 | TMA adsorption (Å)|\\n| 10 | 0.017 | Growth per cycle (Å) |\\n| 15 | 0.9 | TMA adsorption (Å) |\\n| 15 | 0.2 | Growth per cycle (Å) |\\n| 20 | 1.5 | TMA adsorption (Å) |\\n| 20 | 0.4 | Growth per cycle (Å) |\\n| 25 | 2.0 | TMA adsorption (Å) |\\n| 25 | 0.60 | Growth per cycle (Å) |\\n| 30 | 2.0 | TMA adsorption (Å) |\\n| 30 | 0.8 | Growth per cycle (Å) |\"},{\"panel_id\":\"c\",\"text\":\"| Image | RMS (nm) |\\n|---|---|\\n| Ge:H | 0.294 |\\n| 15 ALD Cycles | 0.439 |\\n| 27 ALD Cycles | 0.626 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A trimethylaluminum (TMA) pulse and a water (H₂O) pulse are alternated. An inert gas purge after each pulse removes excess precursor, ensuring the surface reactions are self-limiting.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The incubation delay suggests non-uniform nucleation, which often results in a rough interface and high Interface Trap Density . This scattering can degrade carrier mobility and increase leakage current in the final device.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1 Ge:H -> 0.294 nm\\n2 15 ALD Cycles ->0.439 nm\\n3 27 ALD Cycles -> 0.626 nm \\nAs ALD cycles increases clearly surface roughness seems to increase\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The near-zero initial growth indicates substrate inhibition, where TMA reacts poorly with the Ge surface compared to an Al2O3 surface. The rising trend implies the transition from isolated \\\"island\\\" nucleation to the coalescence of a continuous film layer.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_43_figure_6.jpg","caption":"Figure 6. $\\mathrm{Al}_2\\mathrm{O}_3$ ALD $(T = 270^{\\circ}\\mathrm{C})$ on $\\mathrm{GeO}_x(5\\mathrm{\\AA}) / \\mathrm{Ge}(100)$ . (a) In situ SE monitoring of $\\mathrm{Al}_2\\mathrm{O}_3$ thickness. (b) TMA adsorption and growth per cycle (GPC) as a function of ALD cycles extracted from SE measurement; the TMA adsorption baseline (red dash line) is $\\sim 2.2\\mathrm{\\AA}$ and the GPC baseline (blue dash line) is $\\sim 0.86\\mathrm{\\AA}$ . (c) GPC/TMA-adsorption ratio extracted from SE; the ratio baseline (green dash line) is $\\sim 0.4$","id":"train/atomic-layer-deposition/simulation-usecase/43/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/43/figure_6","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/Yuanxia Zheng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":667,"height":284,"image_format":"jpeg","image_sha256":"404e48b113630df932745092c5f8809dfbdc46de4307b604d14a07c5efcd53a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":35,"width":199,"height":248},{"panel_id":"b","x":216,"y":36,"width":248,"height":248},{"panel_id":"c","x":475,"y":40,"width":191,"height":245}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This line chart shows the stepwise increase in film thickness over time during Al₂O₃ Atomic Layer Deposition (ALD) using TMA and H₂O on a GeOₓ/Ge substrate, with each thickness jump corresponding to one ALD cycle.\"},{\"panel_id\":\"b\",\"text\":\"This multi axis chart shows the TMA dose peak and growth per cycle over ALD cycles. The values seems to dip initally till 3 ALD cycles and increased slowly.\"},{\"panel_id\":\"c\",\"text\":\"This line chart shows the evolution of Growth Per Cycle (GPC) for TMA adsorption over the first 15 ALD cycles, starting from a baseline. The GPC increases from an initial low value before stabilizing, indicating a nucleation period before steady-state growth is achieved.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (min) | Thickness (Å) |\\n|------------|----------------|\\n| 0 | 0 |\\n| 2 | 1.8 |\\n| 4 | 2.7 |\\n| 6 | 5 |\\n| 8 | 8.2 |\\n| 10 | 10 |\"},{\"panel_id\":\"b\",\"text\":\"| ALD Cycles | Y (Å) | Parameter |\\n|------------|--------|------------------------|\\n| 0 | 0 | TMA dose peak (Å) |\\n| 0 | 0 | Growth per cycle (Å) |\\n| 3 | 1.32 | TMA dose peak (Å) |\\n| 3 | 0.04 | Growth per cycle (Å) |\\n| 6 | 1.29 | TMA dose peak (Å) |\\n| 6 | 0.29 | Growth per cycle (Å) |\\n| 9 | 1.9 | TMA dose peak (Å) |\\n| 9 | 0.5 | Growth per cycle (Å) |\\n| 12 | 2.21 | TMA dose peak (Å) |\\n| 12 | 0.86 | Growth per cycle (Å) |\\n| 15 | 2.2 | TMA dose peak (Å) |\\n| 15 | 0.86 | Growth per cycle (Å) |\"},{\"panel_id\":\"c\",\"text\":\"| ALD Cycles | GPC / TMA-Adsorp. |\\n|------------|--------------------|\\n| 0 | 0 |\\n| 3 | 0.04 |\\n| 6 | 0.23 |\\n| 9 | 0.30 |\\n| 12 | 0.40 |\\n| 15 | 0.37 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sequence is a TMA precursor pulse followed by a H₂O oxidant pulse. A purge step with inert gas separates each pulse to remove excess precursor and byproducts, enabling self-limiting surface reactions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The reaction on the dangling bond is significantly more exothermic (-1.74 eV) than on the H-terminated surface (-1.09 eV).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It demonstrates linear, layer-by-layer growth with a constant growth per cycle (GPC). This implies the surface reactions are self-limiting and saturate each cycle, leading to precise thickness control.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This selectivity leads to island growth rather than layer-by-layer deposition, as nucleation occurs exclusively at defect sites first. This non-uniform nucleation creates pinholes and a rough interface, which typically results in high interface trap densities and increased gate leakage current in the final device.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_10.jpg","caption":"Figure 10. Simulated mass change as a function of time from the kMC model (left) and the corresponding experimental QCM measurement adopted from ref 25 (right). The different phases (DEZ pulse/purge/ $\\mathrm{H}_2\\mathrm{O}$ pulse/purge) within the ALD cycle are indicated by the vertical dashed lines. The $\\mathrm{ZnO}$ thin films are deposited at temperature $177^{\\circ}\\mathrm{C}$ in both the simulation and the experiment.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_10","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":980,"height":434,"image_format":"jpeg","image_sha256":"13963c880061defe2c95cdb0d7b8591c7a08956312484133ce65dcac2e326738","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":554,"y":7,"width":426,"height":427},{"panel_id":"a","x":1,"y":4,"width":515,"height":405}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the mass deposited per unit area over time during a ZnO ALD process according to simulations. It includes labeled phases such as 'Dose DEZ', 'Purge', 'Dose H2O', and 'Purge'.\"},{\"panel_id\":\"b\",\"text\":\"The chart illustrates the mass deposited over time during a ZnO ALD process according to experimental data. It includes labeled phases such as 'Dose DEZ', 'Purge', 'Dose H2O', and 'Purge'.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Time (s)| Mass deposited / ng cm-2 | \\n|---|---|\\n| 0.0 | 155 |\\n|0.4| 155 |\\n|0.8|160|\\n|1.2|155|\\n|1.6|155|\"},{\"panel_id\":\"b\",\"text\":\"|Time (s)| Mass deposited / ng cm-2 | \\n|---|---|\\n| 0 | 120 |\\n|2| 115 |\\n|4|115|\\n|6|110|\\n|7|120|\\n|8|115|\\n|10|115|\\n|12|115|\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The gradual increase is related to the reordering at the surface to reach perfect saturation, which will not happen right from the start. It could be that this is not incorporated in the model.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The duration of a single cycle is 12 s. It seems as if the purge after the water dose is longer than required.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.7 s\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that water initially physisorbs at the surface after which the ligands are removed. Leading to a mass increase first.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_13_figure_2.jpg","caption":"Figure 2. DC self-bias under varying bias powers at the (a) $\\mathrm{O_2}$ and (b) $\\mathrm{BCl_3}$ plasma steps, and under varying ICP powers at the (c) $\\mathrm{O_2}$ and (d) $\\mathrm{BCl_3}$ plasma steps.","id":"train/atomic-layer-etching/experimental-usecase/13/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/13/figure_2","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"line chart"},{"panel_id":"d","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/Low-Damage and Self-Limiting (Al)GaN Etching Process.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":1114,"height":867,"image_format":"jpeg","image_sha256":"e7c6346018864fd107a2d0b7eefa8b491ecf0215d4cc941fa534113595868c16","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":21,"y":8,"width":510,"height":407},{"panel_id":"b","x":578,"y":8,"width":526,"height":405},{"panel_id":"c","x":3,"y":455,"width":543,"height":404},{"panel_id":"d","x":573,"y":462,"width":540,"height":400}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between bias power and DC self-bias for O2 plasma step at ICP power of 400 W.\"},{\"panel_id\":\"b\",\"text\":\"The chart shows the relationship between bias power and DC self-bias for BCl3 plasma step at ICP power of 400 W.\"},{\"panel_id\":\"c\",\"text\":\"The chart shows the relationship between ICP power and DC self-bias for O2 plasma step at bias power of 3 W.\"},{\"panel_id\":\"d\",\"text\":\"The chart shows the relationship between ICP power and DC self-bias for BCl3 plasma step at bias power of 2 W.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Bias Power [W] | DC self-bias [V] |\\n|---|---|\\n| 0 | |\\n| 1 | |\\n| 2 | |\\n| 3 | 5 |\\n| 4 | 10 |\\n| 5 | 15 |\\n| 6 | 20 |\"},{\"panel_id\":\"b\",\"text\":\"| Bias Power [W] | DC self-bias [V] |\\n|---|---|\\n| 0 | |\\n| 1 | |\\n| 2 | 5 |\\n| 3 | 10 |\\n| 4 | 13 |\\n| 5 | 17 |\\n| 6 | 21 |\"},{\"panel_id\":\"c\",\"text\":\"| ICP power [W] | DC Self-bias [V] |\\n|---|---|\\n| 250 | |\\n| 300 | |\\n| 350 | |\\n| 400 | 4.0 |\\n| 450 | 4.1 |\\n| 500 | 4.2 |\"},{\"panel_id\":\"d\",\"text\":\"| ICP power [W] | DC Self-bias [V] |\\n|---|---|\\n| 150 | 11 |\\n| 200 | 10 |\\n| 250 | 8 |\\n| 300 | 6 |\\n| 350 | 4 |\\n| 400 | 4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"400 W.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It increases linearly.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It decreases linearly.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3 W.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_13_figure_6.jpg","caption":"Figure 6. Etch rate per cycle of the digital etching performed under (a) varying $\\mathrm{O_2}$ plasma times and fixed HCl dipping time and (b) varying HCl dipping times and fixed $\\mathrm{O_2}$ plasma time.","id":"train/atomic-layer-etching/experimental-usecase/13/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/13/figure_6","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/Low-Damage and Self-Limiting (Al)GaN Etching Process.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":1222,"height":434,"image_format":"jpeg","image_sha256":"d8152c77fe901418877268e7d5cf95e7a30cf31e6a708d55470ac4986541184d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":572,"height":427},{"panel_id":"b","x":667,"y":7,"width":552,"height":426}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch rate increases with increasing O₂ plasma time up to 2 minutes, after which it plateaus.\"},{\"panel_id\":\"b\",\"text\":\"The etch rate increases with increasing dipping time in HCl up to 4 minutes, after which it plateaus.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| O₂ plasma time [min] | Etch rate [nm/cycle] |\\n|---|---|\\n| 0 | 0.0 |\\n| 1 | 0.3 |\\n| 2 | 0.5 |\\n| 3 | 0.5 |\\n| 4 | 0.5 |\"},{\"panel_id\":\"b\",\"text\":\"| Dipping time in HCl at 80 °C [min] | Etch rate [nm/cycle] |\\n|---|---|\\n| 0 | 0.0 |\\n| 2 | 0.4 |\\n| 4 | 0.5 |\\n| 5 | 0.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"5 minutes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.45 nm/cycle.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"30 W.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.5 nm/cycle.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_2.jpg","caption":"Figure 2. Mass change versus time during $\\mathrm{Al}_2\\mathrm{O}_3$ ALE at $200^{\\circ}\\mathrm{C}$ using HF and $\\mathrm{Sn(acac)}_2$ as the reactants. Reproduced with permission from ref 5. Copyright 2015 American Chemical Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_2","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":669,"height":525,"image_format":"jpeg","image_sha256":"ae3dd52e2be2fdcde7bbdc16286ced01d799e0d9d5bd9489c9d99f3dc9964af0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":-1,"width":660,"height":517}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the change in mass over time. A linear decrease in mass change can be seen over time at 200 °C on Al2O3. The process was performed with an exposure time of 1 s for Sn(acac)2 and 1 s of HF, with a 30 s purge between each step.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass Change (ng/cm²) |\\n|---|---|\\n| 0 | 80 |\\n| 2000 | -200 |\\n| 4000 | -450 |\\n| 6000 | -700 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Hf and Sn(acac)2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mass change decreases linearly with increasing time.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The experiment was performed at 200 °C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"-8.4 ng/(cm2 cycle)\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_11.jpg","caption":"Figure 11. Mass change versus time during $\\mathrm{VO}_2$ ALE using $\\mathrm{SF}_4$ and $\\mathrm{Sn(acac)}_2$ as the reactants at $200^{\\circ}\\mathrm{C}$ . Etch rate is $0.30\\mathrm{\\AA}$ /cycle.","id":"train/atomic-layer-etching/experimental-usecase/17/figure_11","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_11","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":664,"height":527,"image_format":"jpeg","image_sha256":"899157dcc9797dae1c63eb1b0a8ca737b57b06a6d0ad9a39738c64f2606ee212","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":664,"height":527}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the mass change during atomic layer etching (ALE) of VO₂ at 200 °C over 50 cycles. A steady linear decrease in mass is observed, reaching approximately –600 ng/cm² by 5000 seconds. The etch rate is specified as 0.30 Å/cycle, and the process involves alternating pulses of SF₄ and Sn(acac)₂, each with pulse and purge times indicated as \\\"3–55–3–55\\\". The linear profile confirms self-limiting and uniform removal per cycle, consistent with ideal ALE behaviour.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass Change (ng/cm²) |\\n|----------|----------------------|\\n| 0 | 150 |\\n| 1000 | 0 |\\n| 2000 | -150 |\\n| 3000 | -300 |\\n| 4000 | -450 |\\n| 5000 | -600 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.30 Å/cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SF₄: 3 s pulse, 55 s purge , Sn(acac)₂: 3 s pulse, 55 s purge\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The linear decrease in mass over time suggests a consistent and self-limiting etching mechanism, which is characteristic of atomic layer etching. The use of alternating SF₄ and Sn(acac)₂ exposures, each followed by a purge, appears to produce uniform mass loss per cycle. The defined etch rate of 0.30 Å/cycle confirms precise and repeatable removal of material. This behavior is essential for achieving nanoscale control in ALE processes, particularly in applications requiring high fidelity and minimal damage to underlying layers.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_12.jpg","caption":"Figure 12. Expanded view of three $\\mathrm{VO}_2$ ALE cycles from Figure 11 showing mass gain during the $\\mathrm{SF}_4$ exposure and mass loss during $\\mathrm{Sn(acac)}_2$ exposure.","id":"train/atomic-layer-etching/experimental-usecase/17/figure_12","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_12","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":670,"height":553,"image_format":"jpeg","image_sha256":"3bba86be54d1c4aaf2f9db6db38aa0e3550784fb44a2bcee0af8eaca3fb4a8b8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":670,"height":553}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates mass change (in ng/cm²) as a function of time during the atomic layer etching (ALE) of VO₂ at 200°C. The etching process involves alternating exposures to SF₄ and Sn(acac)₂, as labeled by the arrows on the plot. Distinct mass loss and gain events are observed during the SF₄ and Sn(acac)₂ steps, respectively. The graph captures both the etching half-cycle (mass loss from SF₄) and the subsequent precursor adsorption step (mass gain from Sn(acac)₂), culminating in a repeatable etch pattern. The label \\\"MCPC\\\" denotes the minimum mass point per cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time(s) | Mass Change (ng/cm²) |\\n|---|---|\\n| 1150 | -30 |\\n| 1200 | -40 |\\n| 1250 | -50 |\\n| 1300 | -60 |\\n| 1350 | -70 |\\n| 1400 | -80 |\\n| 1450 | -90 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sharp drop in mass during SF₄ exposure suggests that SF₄ acts as the primary etching agent in the ALE cycle. Its interaction with the VO₂ surface likely results in the formation and removal of volatile byproducts, leading to a measurable decrease in surface mass. This aligns with the expected function of SF₄ in selectively breaking bonds and removing material from the surface layer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mass increases during Sn(acac)₂ exposure, confirming its adsorption onto the surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SF₄, Sn(acac)₂\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_13.jpg","caption":"Figure 13. First three cycles of $\\mathrm{VO}_2$ ALE using $\\mathrm{SF}_4$ and $\\mathrm{Sn(acac)}_2$ at $200^{\\circ}\\mathrm{C}$ showing initial mass gain from fluorination during $\\mathrm{SF}_4$ exposure and mass changes during the first $\\mathrm{Sn(acac)}_2$ exposure and subsequent $\\mathrm{SF}_4$ and $\\mathrm{Sn(acac)}_2$ exposures.","id":"train/atomic-layer-etching/experimental-usecase/17/figure_13","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_13","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":667,"height":539,"image_format":"jpeg","image_sha256":"eb136fa43deb59d03ecbbb8a561ab5073604eb33f43f15f6a97819fc7d722bac","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":667,"height":539}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a mass change profile over time during a VO₂ atomic layer etching (ALE) process conducted at 200 °C. The mass oscillations correspond to alternating exposures of SF₄ and Sn(acac)₂, clearly indicated by arrows. Each cycle begins with a mass loss during SF₄ exposure, suggesting etching, followed by a mass gain during Sn(acac)₂ dosing, indicative of precursor adsorption. The overall trend highlights the stepwise nature of the ALE process, where the mass change remains tightly controlled and periodic, showcasing the self-limiting behavior typical of atomic layer processing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time(s) | Mass Change (ng/cm²) |\\n|---|---|\\n| 0 | 0 |\\n| 50 | 27 |\\n| 100 | 56 |\\n| 150 | 28 |\\n| 200 | 27 |\\n| 250 | 0 |\\n| 300 | -27 |\\n| 350 | -56 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200°C\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SF₄ , Sn(acac)₂\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The periodic mass increases and decreases suggest a well-defined ALE process, where SF₄ causes mass loss during etching and Sn(acac)₂ leads to a mass gain through precursor adsorption. The regularity of the mass changes with each cycle indicates that the reactions are self-limiting and repeatable, hallmarks of a successful atomic layer etching mechanism. This confirms that the ALE process is tightly controlled at 200°C, producing predictable material removal and surface renewal with each precursor pulse.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_14.jpg","caption":"Figure 14. Mass gains during fluorination of the initial $\\mathrm{VO}_2$ ALD film with either $\\mathrm{SF}_4$ or HF. $\\mathrm{SF}_4$ exposure at $500 \\mathrm{mTorr}$ leads to a higher mass gain than HF exposures at either 60 or $500 \\mathrm{mTorr}$ .","id":"train/atomic-layer-etching/experimental-usecase/17/figure_14","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_14","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":667,"height":541,"image_format":"jpeg","image_sha256":"da27dbdb34182370199d1867239118d24fc924c9fcbc3641db5eaf671e12ab25","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":667,"height":541}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows mass gain over time during fluorination of VO₂ at 200 °C using three different conditions: SF₄ at ~500 mTorr, HF at ~500 mTorr, and HF at ~60 mTorr. All three conditions exhibit a sharp increase in mass at around 30 s, indicating fluorine uptake, followed by a plateau, suggesting saturation. SF₄ leads to the highest mass increase (~32 ng/cm²), followed by HF at higher pressure (~18 ng/cm²) and HF at lower pressure (~10 ng/cm²). These differences highlight the influence of both fluorine source and pressure on the extent of fluorination.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | SF₄ ~500 mTorr | HF ~500 mTorr | HF ~60 mTorr |\\n|----------|----------------|----------------|---------------|\\n| 0 | 0 | 0 | 0 |\\n| 15 | 0 | 0 | 0 |\\n| 30 | 32 | 18 | 10 |\\n| 45 | 32 | 18 | 10 |\\n| 60 | 32 | 18 | 10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SF₄ at ~500 mTorr.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SF₄ at ~500 mTorr , HF at ~500 mTorr , HF at ~60 mTorr\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure shows that higher pressure significantly enhances the effectiveness of HF as a fluorination agent. At 500 mTorr, HF leads to a mass increase of approximately 18 ng/cm², while at 60 mTorr, the mass gain drops to about 10 ng/cm². This suggests that greater precursor availability at higher pressures improves surface fluorination. The consistent plateau observed in both HF traces further indicates that surface saturation is still achieved, but the extent of uptake is pressure-dependent.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_2.jpg","caption":"Figure 2. Expanded view of three $\\mathrm{Al}_2\\mathrm{O}_3$ ALE cycles from Figure 1 showing mass gain during the $\\mathrm{SF}_4$ exposure and mass loss during $\\mathrm{Sn(acac)}_2$ exposure.","id":"train/atomic-layer-etching/experimental-usecase/17/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_2","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":669,"height":539,"image_format":"jpeg","image_sha256":"52fc7227f4e63ab18cdcfa1be1e6ed28670d6bdffec458144c80f86bc7965ed2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":539}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This line chart presents mass change data during Al₂O₃ atomic layer etching (ALE) at 200°C, showing stepwise decreases in mass following alternating exposures to SF₄ and Sn(acac)₂. Distinct mass loss events (ΔM) occur upon each SF₄ pulse, indicating volatile byproduct formation from fluorination. The subsequent Sn(acac)₂ exposures yield mass gains, consistent with precursor adsorption. The black dashed arrow labeled MCPC highlights a stable mass plateau following precursor saturation, marking the point of maximum chemisorbed precursor coverage.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass Change (ng/cm²) |\\n|----------|----------------------|\\n| 13700 | -250 |\\n| 13720 | -255 |\\n| 13740 | -257 |\\n| 13760 | -258 |\\n| 13780 | -260 |\\n| 13800 | -263 |\\n| 13820 | -265 |\\n| 13840 | -266 |\\n| 13860 | -268 |\\n| 13880 | -269 |\\n| 13900 | -270 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"MCPC refers to the Maximum Chemisorbed Precursor Coverage.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SF₄ removes surface oxygen , Sn(acac)₂ replenishes surface metal sites\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mass profile displays repeated and saturating steps, where each pulse of SF₄ causes a predictable mass loss (etch step), followed by a stable plateau after Sn(acac)₂ adsorption. The return to similar mass levels after each Sn(acac)₂ exposure indicates that surface sites become fully occupied and no further mass uptake occurs until the next etch step. This cyclical pattern, along with the MCPC plateau, supports the self-limiting mechanism characteristic of ALE, ensuring precise and controlled etch per cycle behaviour.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_5.jpg","caption":"Figure 5. First three cycles of $\\mathrm{Al}_2\\mathrm{O}_3$ ALE using $\\mathrm{SF}_4$ and $\\mathrm{Sn(acac)}_2$ at $200^{\\circ}\\mathrm{C}$ showing initial fluorination mass gain during $\\mathrm{SF}_4$ exposure, subsequent mass changes during the first $\\mathrm{Sn(acac)}_2$ exposure, and subsequent $\\mathrm{SF}_4$ and $\\mathrm{Sn(acac)}_2$ exposures.","id":"train/atomic-layer-etching/experimental-usecase/17/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_5","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":669,"height":533,"image_format":"jpeg","image_sha256":"552079d405aa98307b4215a07a6866659fd2f37b3d52f1b334941ff7ac51299e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":533}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart presents the mass change over time during atomic layer etching (ALE) of Al₂O₃ at 200 °C. The process alternates between SF₄ and Sn(acac)₂ exposures, with each reagent inducing distinct mass gain or loss steps. The mass increases sharply following each Sn(acac)₂ dose and decreases following SF₄ exposure, consistent with a ligand-exchange-driven etch mechanism. The repeatability of these mass shifts across cycles demonstrates the controlled and cyclical nature of the ALE process.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass Change (ng/cm²) |\\n|----------|----------------------|\\n| 0 | 0 |\\n| 50 | 40 |\\n| 100 | 80 |\\n| 150 | 60 |\\n| 200 | 100 |\\n| 250 | 60 |\\n| 300 | 100 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mass change profile shows distinct, repeatable mass gains upon Sn(acac)₂ exposure and mass losses upon SF₄ exposure, consistent with a two-step self-limiting reaction mechanism. This cyclic pattern confirms that Al₂O₃ undergoes a controlled etching process. Sn(acac)₂ deposits organic ligands or intermediate complexes on the surface, increasing mass, while SF₄ likely facilitates removal of fluorinated byproducts, reducing mass. The regularity of these changes demonstrates a stable and reproducible ALE process.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During Sn(acac)₂ exposure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Reproducible cyclic mass change, distinct etch and deposition phases, stable magnitude across cycles, consistent thermal conditions at 200 °C\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_8.jpg","caption":"Figure 8. Mass change versus time during 125 cycles of $\\mathrm{VO}_2$ ALD at $150^{\\circ}\\mathrm{C}$ using TEMAV and $\\mathrm{H}_2\\mathrm{O}$ as the reactants. Growth rate is $0.63 \\mathrm{Å / cycle}$ .","id":"train/atomic-layer-etching/experimental-usecase/17/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_8","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":672,"height":564,"image_format":"jpeg","image_sha256":"673fc6390596014339d486ed850d3d3b6802afe33dd5c6f1a5c9eac31230f00c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":672,"height":564}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This line graph displays the mass change of a VO₂ film during atomic layer deposition (ALD) at 150 °C over the course of 125 cycles. The increase in mass is linear with respect to time, indicating a highly consistent and reproducible deposition process. The graph annotates a growth rate of 0.63 Å/cycle, and the pulse sequence for the precursors (TEMAV and H₂O) is noted as part of the experimental procedure. The steady mass gain confirms the self-limiting, layer-by-layer nature of ALD and supports the reliability of the chosen conditions for high-quality VO₂ film growth.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass Change (ng/cm²) |\\n|----------|-----------------------|\\n| 0 | 0 |\\n| 5000 | 1400 |\\n| 10000 | 2100 |\\n| 15000 | 2800 |\\n| 20000 | 3500 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The linear mass gain over time confirms that the VO₂ ALD process at 150 °C is self-limiting and highly reproducible. Each ALD cycle contributes a consistent amount of mass, as shown by the steady slope, which reflects a uniform deposition rate across the 125 cycles. This suggests that both precursor pulses, TEMAV and H₂O, are saturating the surface reactions efficiently, enabling the controlled growth of conformal VO₂ films. The annotated growth rate of 0.63 Å/cycle further validates the precision and scalability of the process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.63 Å/cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Linear, stable mass gain, constant growth rate, efficient precursor saturation\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_22_figure_1.jpg","caption":"Figure 1. (a) Mass changes observed by in situ QCM during growth and subsequent etching of $\\mathrm{MoS}_2$ films on alumina at $200^{\\circ}\\mathrm{C}$ . The blue arrow indicates the region of $\\mathrm{MoS}_2$ ALD, and the orange arrow indicates the region of $\\mathrm{MoS}_2$ ALE. (b) In situ QCM data during two cycles of $\\mathrm{MoS}_2$ ALE. A mass gain of $\\sim 42\\mathrm{ng} / \\mathrm{cm}^2$ can be measured after the $\\mathrm{MoF}_6$ dose, followed by a net mass loss of $19\\mathrm{ng} / \\mathrm{cm}^2$ following the $\\mathrm{H}_2\\mathrm{O}$ dose. Orange and blue markers at the bottom of the figure indicate $\\mathrm{MoF}_6$ and $\\mathrm{H}_2\\mathrm{O}$ doses, respectively.","id":"train/atomic-layer-etching/experimental-usecase/22/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/22/figure_1","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/Thermal Atomic Layer Etching of MoS2 Using MoF6 and H2O.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":509,"height":756,"image_format":"jpeg","image_sha256":"ddbeac8b76fa32075689025da3ed985686d7710c74b976a717f706dc8e3409ce","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":38,"y":16,"width":469,"height":358},{"panel_id":"b","x":35,"y":402,"width":471,"height":351}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart depicts mass change during sequential deposition and etching stages over elapsed time. The deposition phase (blue arrow) shows a steady increase in mass, while the etching phase (orange arrow) leads to a gradual decrease, indicating material removal.\"},{\"panel_id\":\"b\",\"text\":\"The line chart illustrates real-time mass changes during alternating exposures to H₂O and MoF₆, visualised through stepwise increases and decreases. Annotated bars indicate the timing of each precursor pulse, and labeled Δ values quantify the mass gain and loss per cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Elapsed Time (s) | Mass Change (ng/cm²) |\\n|------------------|----------------------|\\n| 0 | 0 |\\n| 5 | ~13 |\\n| 10 | ~26 |\\n| 15 | ~39 |\\n| 17 | ~42 (peak) |\\n| 20 | ~37 |\\n| 25 | ~25 |\\n| 30 | ~12 |\\n| 35 | ~0 |\"},{\"panel_id\":\"b\",\"text\":\"| Elapsed Time (s) | Mass Change (ng/cm²) |\\n|------------------|----------------------|\\n| 0 | 0 |\\n| 10 | ~42 |\\n| 12 | ~23 |\\n| 20 | ~65 |\\n| 22 | ~46 |\\n| 30 | ~88 |\\n| 32 | ~69 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"H₂O, MoF₆\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Panel (b) shows mass gain and loss in response to alternating pulses of H₂O and MoF₆. The plateaus between each pulse and the consistent magnitude of change suggest that the surface reactions saturate at each step, characteristic of self-limiting behavior in atomic layer etching (ALE). The consistent Δ mass values following each precursor exposure reinforce the interpretation that a stoichiometric, repeatable reaction occurs with each cycle, indicative of controlled surface etching rather than continuous etching or deposition.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ 42 ng/ cm²\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_22_figure_2.jpg","caption":"Figure 2. QCM saturation curves for precursors (a) $\\mathrm{MoF}_6$ and (b) $\\mathrm{H}_2\\mathrm{O}$ during ALE at $200^{\\circ}\\mathrm{C}$ . ALE timing sequence followed $X / 20 / 3.5 / 20$ and $1 / 20 / X / 20$ s for $\\mathrm{MoF}_6$ and $\\mathrm{H}_2\\mathrm{O}$ , respectively, where $X$ was 0.5, 1.0, 1.5, 2.0, and 3.0 (and 4.0 for $\\mathrm{H}_2\\mathrm{O}$ ). Figure 3. QCM measurements of averaged MCPC between etching temperatures of $100 - 300^{\\circ}\\mathrm{C}$ using the timing sequence $1 - 20 - 2.5 - 20^{\\circ}\\mathrm{C}$ . The mass loss increases dramatically with the etching temperature.","id":"train/atomic-layer-etching/experimental-usecase/22/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/22/figure_2","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/Thermal Atomic Layer Etching of MoS2 Using MoF6 and H2O.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":567,"height":433,"image_format":"jpeg","image_sha256":"19718f292ac0524baf94ee816bc16fd8c981698c9d20f3cefde6e95924f3c0b3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":567,"height":433}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart displays the effect of temperature on the mass change per cycle during a process governed by the recipe \\\"1/20/2.5/20\\\". As the temperature increases from 100°C to 300°C, the mass change becomes increasingly negative, indicating greater mass loss per cycle at higher temperatures. This trend suggests that etching becomes more efficient or aggressive as the temperature rises, especially beyond 200°C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Mass Change Per Cycle (ng/cm²) |\\n|------------------|-------------------------------|\\n| 100 | 0 |\\n| 150 | -10 |\\n| 200 | -20 |\\n| 250 | -100 |\\n| 300 | -250 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"-100 ng/cm²\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"100°C, 150°C, 200°C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure demonstrates that increasing temperature leads to a more significant negative mass change per cycle, indicating enhanced etching. From 100°C to 200°C, the mass loss increases gradually. However, beyond 200°C, the rate of mass loss accelerates sharply, with the most substantial decrease observed at 300°C. This suggests a temperature threshold beyond which the etching process becomes markedly more aggressive, possibly due to increased reactivity or volatilisation of etch products.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_16.jpg","caption":"Figure 16. Average RMS roughness of $\\mathrm{ZnS}$ ALD films grown at $100^{\\circ}\\mathrm{C}$ and after $\\mathrm{ZnS}$ ALD at $300^{\\circ}\\mathrm{C}$ . The $\\mathrm{ZnS}$ film thickness before $\\mathrm{ZnS}$ ALD was $30 \\mathrm{nm}$ .","id":"train/atomic-layer-etching/experimental-usecase/23/figure_16","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_16","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_16.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":672,"height":566,"image_format":"jpeg","image_sha256":"98f2b4f9aa991c95dcfbedd66b27f4b32165fe72dedbdfafb912e48121e88f6e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":669,"height":560}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between the number of ALE cycles and the RMS roughness of a material. As the number of ALE cycles increases, the RMS roughness initially decreases slightly and then sharply increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of ALE Cycles | RMS Roughness (Å) |\\n|---|---|\\n| 0 | 7.26 |\\n| 20 | 6.05 |\\n| 40 | 7.74 |\\n| 60 | 10.77 |\\n| 80 | 17.94 |\\n| 100 | 25 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Tracking roughness is critical because it is a direct indicator of etch uniformity and mechanism; increasing roughness signals loss of layer-by-layer control and the onset of undesirable, non-ideal etching that can degrade device performance. Perform 20 ALE cycles on the sample.\\n\\n2. Transfer the sample to an atomic force microscope (AFM).\\n\\n3. Measure and calculate the RMS roughness over a defined area.\\n\\n4. Repeat steps 1-3 for the next set of cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For an atomically smooth final surface, this ALE process is fundamentally limited. The data shows it cannot be run indefinitely; the roughening after ~60 cycles defines a hard limit on how much material can be removed while maintaining smoothness, unlike an ideal isotropic etch that may maintain a constant roughness.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The trend shows an initial smoothing stage (roughness decreases slightly) followed by a severe roughening stage. The sharp increase likely occurs when the ALE process breaks down, transitioning from a self-limiting, uniform reaction to a non-uniform one where etchant preferentially attacks defects, grain boundaries, or chemically distinct regions, creating a pitted and rough morphology.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the recipe is only suitable for shallow etching. To etch a deep trench, you would need many more than 60 cycles, but the severe post-60-cycle roughening would make the trench sidewalls and bottom unacceptably rough, increasing scattering loss and harming device performance. The process must be modified or a different chemistry found for deep etches.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_3.jpg","caption":"Figure 3. Thickness of $\\mathrm{ZnS}$ film versus number of $\\mathrm{ZnS}$ ALE cycles using HF and TMA as reactants at $300^{\\circ}\\mathrm{C}$ . Initial $\\mathrm{ZnS}$ ALD films were grown at $100^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/23/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_3","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":666,"height":533,"image_format":"jpeg","image_sha256":"21e88c0c955e9513fa45211bfe85798a11029cc2ff351b583b1181111da626aa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":662,"height":526}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line plot represents the thickness of ZnS film measured against number of ZnS ALE cycles using HF and TMA as reactants at 300 °C. Initial ZnS ALD films in this study were grown at 100 °C. The etch rate is approximately 2 Å per cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of ALE Cycles | ZnS Thickness (Å) |\\n|---|---|\\n| 0 | 200 |\\n| 10 | 180 |\\n| 20 | 160 |\\n| 30 | 140 |\\n| 40 | 120 |\\n| 50 | 100 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. HF Pulse: Reacts with the ZnS surface to convert it to a volatile zinc fluoride (e.g., ZnF₂) and a sulfur-containing layer, or to form a modified, fluorinated surface.\\n\\n2. TMA Pulse: Reacts with the modified surface (e.g., with sulfur or fluorine) to produce volatile byproducts (like AlF₃, (CH₃)₂S), completing the removal of a thin layer. The TMA step acts as the co-reactant that removes the modified surface species left after HF exposure, regenerating a reactive surface for the next HF pulse and enabling the cyclic, self-limiting removal.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For damage-free etching over sensitive materials, the thermal ALE process is strongly preferable. The trade-off is potentially slower etch rates and more specific chemistry development, but it preserves the integrity of delicate sub-layers.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ALD at 100°C typically produces a less dense, more disordered, and potentially impurity-containing ZnS film. This porous, defective microstructure presents a higher surface area and more reactive sites for the HF and TMA etchants to attack, leading to a higher removal per cycle compared to a denser film deposited at a higher temperature.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This enables the fabrication of high-precision optical nanostructures like waveguides, photonic crystals, or etch-stop layers. The atomic-level control allows engineers to define features with vertical sidewalls and exact depths, which is critical for controlling light propagation, resonant modes, and interference effects in miniaturized photonic devices.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_26_fig_3.jpg","caption":"Fig. 3. (a) Etching depth of the ALE process. (b) Etching level for etch step and ALE process. (c) Roughness image of MOCVD reference, (d) $\\mathrm{Cl}_2$ plasma etching, and (e) ALE.","id":"train/atomic-layer-etching/experimental-usecase/26/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/26/fig_3","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"bar chart"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/A Normally-Off GaN MIS-HEMT Fabricated.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":567,"height":428,"image_format":"jpeg","image_sha256":"4a913e299febca04f4c754faf33cdfb41f2eaeea896a77bbdc69472d2cebb17c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":259,"height":207},{"panel_id":"b","x":292,"y":16,"width":275,"height":195},{"panel_id":"c","x":0,"y":226,"width":190,"height":201},{"panel_id":"d","x":207,"y":229,"width":169,"height":199},{"panel_id":"e","x":394,"y":230,"width":173,"height":198}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_29_fig_1.jpg","caption":"FIG. 1. EPC of ALE for the AlGaN film as a function of self-bias voltage for a fixed $30\\mathrm{s}$ of Ar plasma exposure in the removal step: (i) incomplete removal, (ii) ALE window, and (iii) sputtering.","id":"train/atomic-layer-etching/experimental-usecase/29/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/29/fig_1","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/Atomic layer etching of AlGaN using Cl2 and Ar gas.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":539,"height":467,"image_format":"jpeg","image_sha256":"3fe566e16ec5132e9c09ea93f7948143d4d9550faf0cc0f6e9524f6f66e0facd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":537,"height":462}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between self-bias voltage and etch depth per cycle. There is a linear increase in etch depth with increasing self-bias voltage after the ALE window.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Self-Bias Voltage (V) | Etch Depth per Cycle (nm) |\\n|---|---|\\n| 0 | 0 |\\n| 25 | 0 |\\n| 30 | 0.3 |\\n| 35 | 0.5 |\\n| 40 | 0.6 |\\n| 45 | 0.6 |\\n| 50 | 0.6 |\\n| 55 | 0.6 |\\n| 60 | 0.8 |\\n| 65 | 0.9 |\\n| 70 | 1.0 |\\n| 75 | 1.2 |\\n| 80 | 1.5 |\\n| 85 | 1.7 |\\n| 90 | 2.0 |\\n| 95 | 2.2 |\\n| 100 | 2.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With the self-bias voltage the accelaration of ions is influenced, which are affected the most.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In that part of the bias range, sputtering is detected, this looks more like continuous reactive ion etching than like ALE.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the EPC, the ALE window should be looked at which is in panel 2. The EPC is then around 0.6 nm/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thresshold is 25 V.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_33_fig_8.jpg","caption":"FIG. 8. Change in N/Ti ratio during an ALE cycle. The atomic concentrations of N and Ti were measured for four TiN films: (1) as-grown with native oxide; (2) before surface modification (after removal of native oxide); (3) after surface modification; (4) after surface modification and IR annealing.","id":"train/atomic-layer-etching/experimental-usecase/33/fig_8","sample_id":"atomic-layer-etching/experimental-usecase/33/fig_8","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/Atomic layer etching of titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":669,"height":511,"image_format":"jpeg","image_sha256":"9c95a4e8eb718a376913e3f790a899dbcac9d685646f3be198aa1e19903f0498","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":664,"height":508}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the variation of N/Ti ratio across different conditions: 'With native oxide', 'Before mod.', 'After mod.', and 'IR Annealing'.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Process step| N/Ti Ratio | \\n|---|---|\\n| With native oxide| 0.95 | \\n| Before mod. |0.98 | \\n| After mod. |0.75 | \\n| IR Annealing | 1.00 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Oxygen atoms are also bonded to Ti atoms, resulting in less N-Ti bonds so lower N/Ti ratio.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With the modification chlorine is added to the surface, reducing the number of N-Ti bonds at the surface for which the XPS is sensitive.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No the stoichiometry of the bulk does not change as the bulk ratio is 1 and after IR anenealing as wel.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In that case the surface will be oxidized again, meaning a native oxide layer will have formed so a N/Ti ratio of 0.95 will be measured.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_38_fig_3.jpg","caption":"FIG. 3. Etch depth as a function of RF power for a fixed Reaction B step time of 5 s, 120 cycles.","id":"train/atomic-layer-etching/experimental-usecase/38/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/38/fig_3","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/High synergy atomic layer etching of AlGaNGaN.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":675,"height":414,"image_format":"jpeg","image_sha256":"f184de7756193e9e63fee05ee0a637981ab9daef29c9d5c07a6f8b7c08cc89e5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":671,"height":408}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the relationship between Ar Plasma RF power and depth, indicating an increase in depth with increasing power. The depth plateaus in the region 15-30W, labeled as ALE Window.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ar Plasma RF power (W) | Depth (nm) |\\n|---|---|\\n| 0 | 0 |\\n| 5 | 2 |\\n| 10 | 5 |\\n| 15 | 13 |\\n| 20 | 12 |\\n| 25 | 14 |\\n| 30 | 14 |\\n| 35 | 28 |\\n| 40 | 38 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE window is the range of settings where the etch is self-limited and controllable per cycle. In this plot, it’s about 15–30 W Ar plasma RF power. It’s identified by the plateau where etch depth changes only slightly with increasing power.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3 cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approx. 0.117 nm per cycle (14 nm/120 cycles).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At RF powers below ~15 W and above ~30 W.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_45_figure_7.jpg","caption":"Figure 7. Etch rates for TiN ALE versus temperature using $\\mathrm{O}_3$ and HF as the reactants.","id":"train/atomic-layer-etching/experimental-usecase/45/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/45/figure_7","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/Thermal Atomic Layer Etching of Titanium Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":672,"height":533,"image_format":"jpeg","image_sha256":"612e3ea4199485b2d5540a7fa710c1a315d87b70312cbd7cdf9e115bb70255f7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":668,"height":528}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch rate increases with temperature up to 250°C and then plateaus\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature(°C) | Etch Rate (Å/cycle) |\\n|---|---|\\n| 150 | 0.06 |\\n| 200 | 0.14 |\\n| 250 | 0.21 |\\n| 300 | 0.20 |\\n| 350 | 0.21 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 250 C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The paper suggests that the oxidation step forms a similar thickness TiO2 layer over this temperature range, and the HF step removes only that oxidized layer. Because the amount removed per cycle is limited by how much oxide is formed in the oxidation step, the etch rate can stabilize even as temperature increases. This behavior is described as analogous to an ALD window.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, from about 250 C to 350 C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They represent the uncertainty or variation in the measured etch rate at each temperature.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_14.jpg","caption":"Figure 14. Saturation study of $\\mathrm{WF_6 / BCl_3}$ ALE process at $170^{\\circ}\\mathrm{C}$ using QCM: (a) $1\\mathrm{WF_6}$ dose of $0.2\\mathrm{s}$ per $10\\mathrm{BCl_3}$ doses of $0.2\\mathrm{s}$ each and (b) $10\\mathrm{WF_6}$ doses of $0.1\\mathrm{s}$ each per $1\\mathrm{BCl_3}$ dose of $1.0\\mathrm{s}$ .","id":"train/atomic-layer-etching/experimental-usecase/46/figure_14","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_14","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":950,"height":383,"image_format":"jpeg","image_sha256":"70bfe98a5138302a5e77ecd9c986e22679b63efce3eb3f7d4049bae6fff5d093","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":475,"height":381},{"panel_id":"b","x":484,"y":5,"width":466,"height":376}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"QCM data demonstrating BCl₃ saturation behavior. After an initial WF₆ pulse causes fluorination and mass gain, the first few BCl₃ pulses induce a sharp mass loss. Subsequent BCl₃ pulses produce negligible change, confirming that the etching reaction is self-limiting once the fluorinated surface layer is consumed.\"},{\"panel_id\":\"b\",\"text\":\"QCM data demonstrating WF₆ saturation behavior. The first WF₆ pulse results in a large mass increase due to surface fluorination, while additional WF₆ pulses contribute minimal mass change, confirming that fluorination is also self-limiting and does not proceed indefinitely.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass loading (ng cm⁻²) | Process condition |\\n|----------|------------------------|-------------------------|\\n| 0 | 0 | Initial state |\\n| 50 | 160 | WF₆ pulse |\\n| 100 | 60 | 10× BCl₃ |\\n| 300 | 40 | 10× BCl₃ |\\n| 500 | 30 | 10× BCl₃ |\\n| 550 | 80 | WF₆ pulse |\\n| 600 | 20 | 10× BCl₃ |\\n| 800 | 0 | 10× BCl₃ |\\n| 1000 | −20 | 10× BCl₃ |\\n| 1050 | 60 | WF₆ pulse |\\n| 1100 | −10 | 10× BCl₃ |\\n| 1300 | −40 | 10× BCl₃ |\\n| 1500 | −60 | 10× BCl₃ |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Mass loading (ng cm⁻²) | Process condition |\\n|----------|------------------------|------------------|\\n| 0 | 0 | Initial state |\\n| 100 | 150 | 10× WF₆ |\\n| 300 | 220 | 10× WF₆ |\\n| 500 | 260 | 10× WF₆ |\\n| 550 | 50 | BCl₃ |\\n| 700 | 80 | 10× WF₆ |\\n| 900 | 70 | 10× WF₆ |\\n| 1000 | −120 | BCl₃ |\\n| 1150 | −80 | 10× WF₆ |\\n| 1350 | −100 | 10× WF₆ |\\n| 1500 | −280 | BCl₃ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Diminishing Removal. No, the 10th pulse removes almost nothing. The first BCl₃ pulse causes a massive drop, the second is smaller, and by the 5th–10th pulse, the mass signal is essentially flat, indicating the reactant has run out of surface fluorides to react with.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The strategy in b is likely more efficient for maximizing etch rate. Multiple short WF₆ doses ensure complete fluorination of the surface without excessive precursor waste, while a single, sufficiently long BCl₃ dose guarantees complete removal of the modified layer. The method in 'a' may waste BCl₃ with many short, possibly incomplete doses.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Saturation proves both half-reactions are self-limiting. The WF₆ dose saturates once all available surface sites are fluorinated, forming a TiFₓ-WOₓFᵧ layer. The BCl₃ dose saturates once it completely converts/removes this modified layer to volatile products (e.g., TiCl₄). Further dosing beyond the saturation point yields no additional etch, confirming layer-by-layer control.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Clear saturation implies a robust process window. As long as dose times exceed the saturation point, minor fluctuations in precursor flow or timing will not affect the etch rate per cycle. This insensitivity is critical for high-volume manufacturing, ensuring reproducible etch depth and uniformity across the wafer and from run to run.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_24_fig_4.jpg","caption":"Fig. 4. Influence of reactant exposure time and temperature on the sample mass changes during thermal ALE $\\mathrm{Al}_2\\mathrm{O}_3$ films using TMA and HF. (I): effect of TMA (a) and HF (b) exposure time on mass changes ( $\\Delta \\mathrm{M}_{\\mathrm{TMA}}$ and $\\Delta \\mathrm{M}_{\\mathrm{HF}}$ ) at $300^{\\circ}\\mathrm{C}$ , respectively; (II): effect of temperature on $\\Delta \\mathrm{M}_{\\mathrm{TMA}}$ and $\\Delta \\mathrm{M}_{\\mathrm{HF}}$ of TMA, HF half-reaction (a) and mass change per ALE cycle (MCPC). Reproduced from Ref. [28].","id":"train/atomic-layer-etching/simulation-usecase/24/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/24/fig_4","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"line chart"},{"panel_id":"d","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/Review Paper -- Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":1003,"height":625,"image_format":"jpeg","image_sha256":"fe375e9ee1fe47e45d4b42ba3fedcfd6c1755a377163739fe4d22aefbb130e97","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":7,"y":285,"width":501,"height":292},{"panel_id":"b","x":532,"y":8,"width":469,"height":249},{"panel_id":"a","x":1,"y":5,"width":510,"height":274},{"panel_id":"d","x":536,"y":256,"width":467,"height":329}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A line chart showing the change in ΔMTMA with increasing TMA exposure time at 300°C.\"},{\"panel_id\":\"b\",\"text\":\"A multiple line chart showing the change ΔMTMA, and ΔMHF as a function of the exposure time.\"},{\"panel_id\":\"c\",\"text\":\"A line chart showing the change in ΔMHF with increasing HF exposure time at 300°C.\"},{\"panel_id\":\"d\",\"text\":\"A line chart showing the change in MCPC as a function of the temperature, between 250 and 325 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TMA Exposure Time (s) | ΔMTMA (ng/cm2 cycle)) |\\n| --- | --- |\\n| 0.0 | 0 |\\n| 1.0 | -20 |\\n| 2.0 | -30 |\\n| 3.0 | - |\"},{\"panel_id\":\"b\",\"text\":\"| Exposure time | ΔM HF | ΔM TMA |\\n| --- | --- | --- |\\n| - | 5 | -10 |\\n| - | 10 | -20 |\\n| - | 18 | -30 |\\n| | 20 | -40 |\"},{\"panel_id\":\"c\",\"text\":\"| HF Exposure Time (s) | ΔMHF (ng/cm2 cycle)) |\\n| --- | --- |\\n| 0.0 | 0 |\\n| 0.5 | 12 |\\n| 1.0 | 14 |\\n| 1.5 | 15 |\\n| 2.0 | - |\"},{\"panel_id\":\"d\",\"text\":\"| Temperature (°C) | MCPC (ng/cm2 cycle)) |\\n| --- | --- |\\n| 250 | 0 |\\n| 275 | -10 |\\n| 300 | -18 |\\n| 325 | -20 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The lower temperature, i.e. 250 °C\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the temperature increases, the amount of mass that changes per cycle decreases, slowing the ALE cycle down.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the subfigure, the mass change increases with the exposure time for HF, but decreases for TMA.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mass changes of the samples, in this case for HF, are shown as a function of the HF exposure time (s).\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_c7be3f3d0a3f5b7cce1c5f6182cb538c5a79b547f531c40a02988e69d6a039b3.jpg","caption":"","id":"train/atomic-layer-etching/simulation-usecase/33/c7be3f3d0a3f5b7cce1c5f6182cb538c5a79b547f531c40a02988e69d6a039b3","sample_id":"atomic-layer-etching/simulation-usecase/33/c7be3f3d0a3f5b7cce1c5f6182cb538c5a79b547f531c40a02988e69d6a039b3","subset":"line-chart","split":"train","classification":[{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/c7be3f3d0a3f5b7cce1c5f6182cb538c5a79b547f531c40a02988e69d6a039b3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/c7be3f3d0a3f5b7cce1c5f6182cb538c5a79b547f531c40a02988e69d6a039b3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"b","first_classification_label":"line chart","caption_source":"not_found"},"width":333,"height":286,"image_format":"jpeg","image_sha256":"53bebf21667e446775f46c389de786e01c5462111aa757ae5632c766787960ce","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":0,"width":333,"height":286}],"summarization":"[{\"panel_id\":\"b\",\"text\":\"The chart illustrates how the etching yield of silicon nitride (Si₃N₄) during HF exposure varies with the angle of incidence (θₐₙ) of incoming particles. The yield remains nearly constant around 0.06 between 0° and 30°, then slightly increases to a peak of 0.07 at 45°. Beyond this angle, the etching yield decreases markedly, reaching approximately 0.03 at 75°. This trend indicates that normal to moderately angled incidence promotes optimal etching, while highly oblique angles reduce etching efficiency, likely due to reduced energy transfer or surface access.\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"| θin (deg) | Etching yield (Si3N4/HF) |\\n|---|---|\\n| 0 | 0.06 |\\n| 15 | 0.06 |\\n| 30 | 0.06 |\\n| 45 | 0.07 |\\n| 60 | 0.05 |\\n| 75 | 0.03 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etching yield remains relatively stable between 0° and 30°, with values around 0.06. At 45°, the yield slightly increases to 0.07, suggesting enhanced surface interaction at this moderate angle. However, beyond 45°, the etching yield decreases significantly, dropping to 0.03 at 75°. This implies that more oblique angles reduce the effectiveness of etching, likely due to lower surface impact or inefficient energy transfer from incident particles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"45 degrees.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Maximum etching efficiency occurs near 45°, Minimal change is seen from 0° to 30° , Avoid high angles (≥ 60°), reactor design should consider angular effects.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_figure_9.jpg","caption":"Figure 9. (a) The reflection coefficient, and (b) the total etching yield per incident HF molecule, both as a function of the incident angle. The error bars indicate the standard deviations among three independent runs.","id":"train/atomic-layer-etching/simulation-usecase/33/figure_9","sample_id":"atomic-layer-etching/simulation-usecase/33/figure_9","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":323,"height":286,"image_format":"jpeg","image_sha256":"411cc1668e980299573a3af45fa293f2c40a3055fbfdd594fa288d32a7cf45a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":323,"height":286}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents the variation of reflection coefficient as a function of incident angle (θin) from 0° to 75°. From 0° to 45°, the reflection coefficient remains relatively constant at around 0.1, indicating minimal reflection changes over low to moderate angles. At 60°, the coefficient begins to rise, and at 75°, it increases sharply to approximately 0.45. This indicates that higher incident angles lead to significantly more surface reflection, a behavior that may influence energy input or beam penetration in angle-sensitive surface processes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| θin (deg) | Reflection coefficient |\\n|---|---|\\n| 0 | 0.1 |\\n| 15 | 0.1 |\\n| 30 | 0.1 |\\n| 45 | 0.1 |\\n| 60 | 0.2 |\\n| 75 | 0.45 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reflection coefficient remains relatively stable at around 0.1 between 0° and 45°, suggesting minimal angle dependence in that range. However, beyond 60°, the coefficient increases substantially, reaching approximately 0.45 at 75°. This trend indicates that reflection becomes significantly more pronounced at high angles of incidence, which could affect energy deposition or reaction efficiency in angle-sensitive processes.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 60 degrees\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Minimise angles above 60° , Maintain angles between 0° and 45° , Adjust beam alignment in plasma\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_35_FIG5.jpg","caption":"Figure 5. (a-d) Snapshots representing the $\\mathrm{H}_2\\mathrm{O}$ formation mechanism obtained in optimization of the $\\mathrm{O}_5$ configuration, as shown in Figure 3 (the color code is the same). The left panel shows a complementary graph with relative energy along the formation pathway with respect to the initial geometry (desorbed oxygen atoms).","id":"train/atomic-layer-etching/simulation-usecase/35/FIG5","sample_id":"atomic-layer-etching/simulation-usecase/35/FIG5","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/Density Functional Theory Study of Oxygen Adsorption on Polymer Surfaces for Atomic-Layer.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":998,"height":828,"image_format":"jpeg","image_sha256":"de5811f88545d56a9c69af1f64770cbae23484b972b1b4d2282531eed633a3b5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":152,"width":615,"height":470},{"panel_id":"b","x":679,"y":8,"width":306,"height":204},{"panel_id":"c","x":680,"y":216,"width":312,"height":204},{"panel_id":"d","x":680,"y":428,"width":312,"height":201},{"panel_id":"e","x":680,"y":639,"width":285,"height":184}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_4_figure_1.jpg","caption":"Figure 1. Etch per cycle for TiN films versus $\\mathrm{NbF}_5$ pulse time at $460^{\\circ}C$ The duration of $\\mathbb{N}_2$ purges and $\\mathrm{CCl}_4$ pulses were fixed at 6 and 1 s, respectively.","id":"train/atomic-layer-etching/simulation-usecase/4/figure_1","sample_id":"atomic-layer-etching/simulation-usecase/4/figure_1","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/Combining Experimental and DFT Investigation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":633,"height":575,"image_format":"jpeg","image_sha256":"9ddaf759394920b5a45161c754403177fba77daf46ec5daa2f58239c413b30e7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":1,"width":623,"height":569}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates how the etch per cycle of TiN films varies with NbF₅ pulse time during the NbF₅–CCl₄ etch process at 460 °C. The etch per cycle increases from about 0.3 Å without NbF₅ to approximately 0.8 Å at a 3 s NbF₅ pulse, showing a gradual increase without clear saturation under the applied conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| NbF₅ pulse time [s] | Etch per cycle [Å] |\\n|---|---|\\n| 0.0 | 0.3 |\\n| 1.0 | 0.6 |\\n| 3.0 | 0.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch per cycle increases with increasing NbF₅ pulse time. When no NbF₅ is used, the etch per cycle is about 0.3 Å, indicating that CCl₄ alone can etch TiN. As the NbF₅ pulse time increases to 1 s, the etch per cycle rises to approximately 0.6 Å, and further increases to about 0.8 Å at a 3 s pulse time. The trend shows a gradual increase without clear saturation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Partially self-limiting surface reactions, Insufficient purge time, Low volatility or slow removal of reaction products, Presence of residual CCl₄ vapors in the etch system, Slow diffusion of fluorine species through TiN grain boundaries\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 0.6 Å.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_9_1efb120580ad0809db6986794a53a1e9c383b07153d625e10037bb0738d83671.jpg","caption":"Fig. A1. Convergce tests for atomic layr nmber and cutoff energies for DFT calculations. (a) Variation of adsorption energy of chlorine with layer number, cutoff energies of $50 / 200\\mathrm{Ry}$ were applied. (b) Variation of total system energy with cutoff energies for wave function and electron density, the cutoff energy for electron density was set to be 4 times that for wave function, as a default setting in Quantum Espresso.","id":"train/atomic-layer-etching/simulation-usecase/9/1efb120580ad0809db6986794a53a1e9c383b07153d625e10037bb0738d83671","sample_id":"atomic-layer-etching/simulation-usecase/9/1efb120580ad0809db6986794a53a1e9c383b07153d625e10037bb0738d83671","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/1efb120580ad0809db6986794a53a1e9c383b07153d625e10037bb0738d83671.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/1efb120580ad0809db6986794a53a1e9c383b07153d625e10037bb0738d83671.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/Mechanism of photoassisted atomic layer etching of chlorinated Si(111) surfaces Insight.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":667,"height":850,"image_format":"jpeg","image_sha256":"114e6d0e178f8c65967445067b4339a644ab0c8b3d44a4e188b6f0b4da1539ec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":7,"y":455,"width":654,"height":391},{"panel_id":"a","x":9,"y":11,"width":654,"height":400}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between layer number and adsorption energy, with a decreasing trend, indicating that for a certain structure adsorption is more likely.\"},{\"panel_id\":\"b\",\"text\":\"The line chart illustrates the decrease in total energy with increasing cut-off energies.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Layer number | Adsorption Energy (eV) |\\n|---|---|\\n| 4 | 4.2 |\\n| 6 | 4.13 |\\n| 8 | 4.12 |\\n| 10 | 4.12 |\\n| 12 | 4.12 |\"},{\"panel_id\":\"b\",\"text\":\"| Cut-off energies (Ry) | Total energy (Ry) |\\n|---|---|\\n| 15 | -945.9 |\\n| 20 | -946.1 |\\n| 25 | -946.2 |\\n| 30 | -946.3 |\\n| 35 | -946.3 |\\n| 40 | -946.3 |\\n| 45 | -946.3 |\\n| 50 | -946.3 |\\n| 55 | -946.3 |\\n| 60 | -946.35 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Energy in Ry (Rydberg) is a fundamental unit in atomic physics, representing the ionization energy of a hydrogen atom from its ground state, approximately 13.6 electron volts (eV).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50 Ry\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that from a certain thickness onwards, the substrate has no repelling influence on adsorption anymore.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Layer number 8.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_9_42b2341dcb88232a2b3d8fc38fe7c5cbc5345d5e59715edb80a39db016f6f34c.jpg","caption":"Fig. A2. Variation of the lowest excitation energy with the number of Si atoms of the cluster, insets are the molecular structures of the associated clusters.","id":"train/atomic-layer-etching/simulation-usecase/9/42b2341dcb88232a2b3d8fc38fe7c5cbc5345d5e59715edb80a39db016f6f34c","sample_id":"atomic-layer-etching/simulation-usecase/9/42b2341dcb88232a2b3d8fc38fe7c5cbc5345d5e59715edb80a39db016f6f34c","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/42b2341dcb88232a2b3d8fc38fe7c5cbc5345d5e59715edb80a39db016f6f34c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/42b2341dcb88232a2b3d8fc38fe7c5cbc5345d5e59715edb80a39db016f6f34c.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/Mechanism of photoassisted atomic layer etching of chlorinated Si(111) surfaces Insight.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":667,"height":436,"image_format":"jpeg","image_sha256":"0a3fe8f79a8e85544bb89ae30de61dd6b8698e506f7cbfb3b842802f19958580","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":662,"height":433}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The excitation energy of a system decreases as the number of silicon (Si) atoms increases, this is a stepwise relation as a function of the number of Si atoms.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Si atoms | Excitation energy (eV) |\\n|---|---|\\n| 0 | - |\\n| 3 | 4.1 |\\n| 7 | 3.7 |\\n| 11 | 3.6 |\\n| 15 | 3.2 |\\n| 24 | 3.2 |\\n| 34 | 3.1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"n=34 as actual substrates used in experimental data are composed of way more atoms than depicted in this graph.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Big substrates in simulations require way more computing power than substrates with little number of atoms.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A reason could be the effect that more connected silicon atoms shift energy levels in adsorbed species to lower energies.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No this is unlikely, except for the case where the delta time is reduced to an extremely low value\"}]}]"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_12_fig_10.jpg","caption":"Fig. 10. Tungsten film thickness deposited at $425 \\mathrm{K}$ versus number of AB cycles. The $\\mathrm{WF}_6$ and $\\mathrm{Si}_2\\mathrm{H}_6$ reactant exposures of nine pulses and 40 pulses, respectively, were sufficient for complete half-reactions. The least squares linear fit to the data yields a tungsten growth rate of $2.5 \\mathrm{\\AA / AB}$ cycle.","id":"train/atomic-layer-deposition/experimental-usecase/12/fig_10","sample_id":"atomic-layer-deposition/experimental-usecase/12/fig_10","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows a linear relationship between the number of AB cycles and the thickness of a tungsten film deposited at 425 K, confirming self-limiting Atomic Layer Deposition (ALD) behavior. A least squares fit gives a tungsten growth rate of 2.5 Å/cycle using reactant exposures of 9 pulses of WF₆ and 40 pulses of Si₂H₆ per cycle, sufficient for complete surface reactions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| AB Cycles | Tungsten Film Thickness (Å) |\\n|---|---|\\n| 0 | 0 |\\n| 10 | 25 |\\n| 20 | 50 |\\n| 30 | 75 |\\n| 40 | 100 |\\n| 50 | 125 |\\n| 60 | 150 |\\n| 70 | 175 |\\n| 80 | 200 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The linear chart shows a consistent, repeatable increase of 2.5 Å per cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"425 K (152 °C).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Immediate nucleation of tungsten from the first cycle.\\n, No incubation period or delay in film growth.\\n, Ideal surface reactivity from the start.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The perfect linearity guarantees uniform, void-free filling of high-aspect-ratio features. The low temperature (425 K) prevents damage to pre-existing chip layers. This enables reliable fabrication of nanoscale tungsten interconnects.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":1,"width":586,"height":576}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/J.W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":594,"height":581,"image_format":"jpeg","image_sha256":"0f04ce1c4e14012a05992cff50250d19cf171ed2c666e9739fb0ab6dbf10123c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_12_fig_11.jpg","caption":"Fig. 11. Tungsten film thickness deposited after three AB cycles versus substrate temperature. The $\\mathrm{WF}_6$ and $\\mathrm{Si}_2\\mathrm{H}_6$ reactant exposures at each temperature were sufficient for complete half-reactions.","id":"train/atomic-layer-deposition/experimental-usecase/12/fig_11","sample_id":"atomic-layer-deposition/experimental-usecase/12/fig_11","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line graph represents the tungsten film thickness deposited after 3 AB cycles against substrate temperature (300–600 K). The curve shows a distinct peak: thickness initially rises with temperature, reaches a maximum near 425 K, and then saturates at higher temperatures. WF₆ and Si₂H₆ reactant exposures at each temperature were sufficient for complete half-reactions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (K) | Tungsten Film Thickness (Å) |\\n|---|---|\\n| 300 | 3.4 |\\n| 400 | 6.7 |\\n| 500 | 7.5 |\\n| 600 | 7.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. FTIR confirms the reactions remain self-limiting, surface-saturated half-reactions; the constant rate results from stable surface intermediate coverage, not a gas-phase decomposition mechanism.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The stability of fluorine-containing surface intermediates (WFₓ, SiHᵧF_z) versus the loss of surface hydroxyl groups (dehydroxylation) on oxides.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Their stability keeps the surface consistently saturated with reactive sites, so each cycle deposits the same amount of tungsten. This uniform site availability produces the flat, temperature-independent growth-rate plateau seen on the graph\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It provides a large process window. This minimizes sensitivity to minor temperature fluctuations across a wafer or between tools. It ensures uniform film thickness and properties, improving production yield and repeatability.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":5,"width":595,"height":600}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/J.W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":600,"height":609,"image_format":"jpeg","image_sha256":"dab9ccea58557a79f71245107afc6b8b75501b68734c468d3819ed59e543cdec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_18_fig4.jpg","caption":"FiG.4. rPRA t t t t cursor Ar purge. The process parameters for these depositions are stated in Table I.","id":"train/atomic-layer-deposition/experimental-usecase/18/fig4","sample_id":"atomic-layer-deposition/experimental-usecase/18/fig4","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"line chart"},{"panel_id":"d","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"ZrN growth per cycle versus substrate temperature shows a low-temperature ALD window with stable GPC and a sharp increase at higher temperatures due to thermally activated, non-self-limiting growth.\"},{\"panel_id\":\"b\",\"text\":\"GPC saturation with increasing TDMAZr pulse time confirms self-limiting precursor adsorption and complete surface coverage beyond a critical pulse duration.\"},{\"panel_id\":\"c\",\"text\":\"GPC rapidly reaches a constant value with increasing forming-gas plasma exposure, indicating efficient ligand removal and nitridation within short plasma times.\"},{\"panel_id\":\"d\",\"text\":\"Post-precursor purge time affects GPC: insufficient purging causes elevated growth from parasitic reactions, while longer purge times restore true ALD behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Substrate Temperature (°C) | GPC (nm/cycle) |\\n|---|---|\\n| 100 | ~0.11 |\\n| 150 | ~0.10 |\\n| 200 | ~0.11 |\\n| 250 | ~0.15 |\\n| 300 | ~0.55 |\"},{\"panel_id\":\"b\",\"text\":\"| TDMAZr pulse (s) | GPC (nm/cycle) |\\n|---|---|\\n| 0.02 | ~0.07 |\\n| 0.04 | ~0.09 |\\n| 0.06 | ~0.10 |\\n| 0.08 | ~0.10 |\\n| 0.10 | ~0.10 |\\n| 0.12 | ~0.10 |\\n| 0.16 | ~0.10 |\\n| 0.20 | ~0.10 |\"},{\"panel_id\":\"c\",\"text\":\"| Plasma exposure (s) | GPC (nm/cycle) |\\n|---|---|\\n| 1 | ~0.12 |\\n| 3 | ~0.12 |\\n| 6 | ~0.10 |\\n| 9 | ~0.10 |\\n| 12 | ~0.10 |\\n| 15 | ~0.10 |\\n| 18 | ~0.10 |\"},{\"panel_id\":\"d\",\"text\":\"| Post-TDMAZr purge (s) | GPC (nm/cycle) |\\n|---|---|\\n| 1 | ~0.26 |\\n| 3 | ~0.25 |\\n| 6 | ~0.10 |\\n| 9 | ~0.10 |\\n| 12 | ~0.10 |\\n| 15 | ~0.10 |\\n| 18 | ~0.10 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure identifies an ALD process window that ensures stable, self-limiting ZrN growth at low temperatures by balancing precursor exposure, plasma reactivity, and purge efficiency. These optimized conditions yield consistent growth per cycle while suppressing parasitic CVD reactions, enabling uniform, conductive ZrN films suitable for temperature-sensitive electronic and interconnect applications\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"GPC increases and saturates with increasing TDMAZr pulse time, while it decreases and then stabilizes with increasing post-precursor purge time.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Surface saturation by TDMAZr precursor molecules, Efficient removal of surface ligands by forming-gas plasma, Prevention of gas-phase reactions through sufficient purge time, Thermal stability of surface-bound species within the ALD window\"}]}]","bbox":[{"panel_id":"a","x":10,"y":0,"width":490,"height":330},{"panel_id":"b","x":520,"y":0,"width":477,"height":363},{"panel_id":"c","x":10,"y":389,"width":476,"height":352},{"panel_id":"d","x":520,"y":389,"width":477,"height":352}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/Triratna Muneshwar et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":997,"height":741,"image_format":"jpeg","image_sha256":"845e3a13ad4767a45632c671a54f084ac8248c6d8b390930dd902684da8710fe","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_18_fig_3.jpg","caption":"FIG. 3. (a) Film thickness vs number of PEALD cycles as determined from d-iSE data analysis for $\\mathrm{ZrN}$ deposition on Si substrate at $\\mathrm{T_{sub} = 150^{\\circ}C}$ $\\mathrm{t_1 = 0.12s}$ $\\mathrm{t_2 = 15s}$ $\\mathrm{t_3 = 15s}$ and $\\mathrm{t_4 = 15s}$ In a steady growth regime, GPC of $0.10\\mathrm{nm}$ cycle was determined from the linear fit (dashed lines). (b) Comparison between the film thicknesses determined from iSE at $150^{\\circ}\\mathrm{C}$ and ex-situ XRR at room temperature on identical samples.","id":"train/atomic-layer-deposition/experimental-usecase/18/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/18/fig_3","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"ZrN film thickness increases linearly with PEALD cycle number, measured by dynamic in-situ spectroscopic ellipsometry. Linear fit gives a growth per cycle of ~0.103 nm, confirming immediate nucleation and self-limiting ALD behavior.\"},{\"panel_id\":\"b\",\"text\":\"Comparison of ZrN thickness measured in-situ by ellipsometry and ex-situ by X-ray reflectivity on identical samples. Close agreement validates the accuracy of the ellipsometric thickness model.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycle # | ZrN thickness (nm) |\\n|---|---|\\n| 5 | ~0.5 |\\n| 10 | ~1.0 |\\n| 20 | ~2.1 |\\n| 30 | ~3.1 |\\n| 40 | ~4.1 |\\n| 50 | ~5.2 |\\n| 60 | ~6.2 |\"},{\"panel_id\":\"b\",\"text\":\"| ALD cycle # | Thickness (nm) |\\n|---|---|\\n| 25 | ~2.6 |\\n| 50 | ~5.2 |\\n| 75 | ~7.7 |\\n| 100 | ~10.3 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The linear thickness increase with cycle number demonstrates excellent process stability and reproducibility, allowing precise thickness control through cycle counting. The validated growth per cycle and agreement between in-situ and ex-situ measurements ensure reliable scaling of ZrN film thickness, which is essential for integrating conductive nitride layers into advanced electronic and interconnect applications.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ZrN film thickness increases linearly with ALD cycle number with a constant growth rate of approximately 0.10 nm per cycle.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Linear thickness increase without incubation delay, Consistent slope across all measured cycles, Agreement between in-situ SE and ex-situ XRR thickness values, Minimal scatter around the linear fit\"}]}]","bbox":[{"panel_id":"a","x":1,"y":3,"width":603,"height":449},{"panel_id":"b","x":351,"y":202,"width":237,"height":172}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/Triratna Muneshwar et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":608,"height":453,"image_format":"jpeg","image_sha256":"449c81a6b1abc01002f00a7b20dc5332c9f680bd05fbde0eedbfe9856490c32d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_18_fig_7.jpg","caption":"FiG. 7. (a) Electrical resistivity of $\\mathrm{ZrN}$ PEALD films deposited on thermal $\\mathrm{SiO_2}$ substrate at $150^{\\circ}\\mathrm{C}$ , as a function of measurement temperature. (b) Plot of $\\Delta \\rho /\\rho_{\\mathrm{o}}$ vs measurement temperature showing TCR of $0.0088 / ^{\\circ}\\mathrm{C}$ for $\\mathrm{ZrN}$ films.","id":"train/atomic-layer-deposition/experimental-usecase/18/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/18/fig_7","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Electrical resistivity of PEALD-grown ZrN films versus measurement temperature shows a linear increase, characteristic of metallic conduction dominated by electron–phonon scattering.\"},{\"panel_id\":\"b\",\"text\":\"Normalized resistivity change (Δρ/ρ₀) versus temperature. Positive temperature coefficient of resistivity (TCR ≈ 0.0088 %/°C) confirms stable metallic transport over the measured range.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Resistivity (µΩ·cm) |\\n|---|---|\\n| 25 | ~560 |\\n| 50 | ~650 |\\n| 75 | ~750 |\\n| 100 | ~880 |\\n| 125 | ~1020 |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | Δρ/ρ₀ |\\n|---|---|\\n| 25 | 0.00 |\\n| 50 | ~0.002 |\\n| 75 | ~0.004 |\\n| 100 | ~0.006 |\\n| 125 | ~0.009 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The linear increase of resistivity with temperature and the positive, stable TCR confirm that the PEALD-grown ZrN films exhibit metallic conduction with predictable thermal behavior. This stability in electrical performance, combined with low-temperature deposition capability, supports the suitability of ZrN films for applications such as conductive diffusion barriers, interconnect layers, and electrodes in microelectronic devices where thermal reliability is essential.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The resistivity increases approximately linearly with temperature, yielding a positive TCR of about 0.0088 %/°C.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Presence of metallic Zr 4d conduction states, Electron–phonon scattering dominating charge transport, Continuous, dense ZrN film microstructure, Low defect-induced carrier localization\"}]}]","bbox":[{"panel_id":"a","x":3,"y":6,"width":606,"height":434},{"panel_id":"b","x":344,"y":202,"width":242,"height":161}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/Triratna Muneshwar et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":608,"height":441,"image_format":"jpeg","image_sha256":"3b9ccd4183aad7ff41a96c2f349a61475a33c8211b4b8d3c2fb6dd6d72085479","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_2_figure_2.jpg","caption":"Figure 2. Film thickness vs the number of reaction cycles completed.","id":"train/atomic-layer-deposition/experimental-usecase/2/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/2/figure_2","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the evolution of film thickness as a function of the total number of ALD reaction cycles. The relationship is strongly linear, with thickness increasing from ~35 nm at 1000 cycles to ~105 nm at 3000 cycles. The linear fit and narrow error bars suggest a stable, fully saturated ALD process in which the growth per cycle (GPC) remains constant throughout the experiment.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of reaction cycles | Film thickness (nm) |\\n|---------------------------|----------------------|\\n| 1000 | ~35 |\\n| 1500 | ~50 |\\n| 2000 | ~70 |\\n| 3000 | ~105 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"- Constant surface saturation during each precursor exposure step\\n- Efficient purging that prevents gas-phase or parasitic reactions\\n- Stable substrate temperature across all cycles\\n- Reproducible adsorption and ligand-removal reactions in every half-cycle\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A constant and uniform growth per cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"CVD-like growth would introduce continuous deposition during reactant exposure, causing the growth rate to depend on time rather than discrete cycles. This typically results in super-linear thickness increases with cycle count. The strictly linear trend observed confirms that growth occurs only during surface-limited reactions, consistent with true ALD rather than CVD behavior.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A linear relationship allows thickness to be defined solely by the number of ALD cycles, enabling deterministic control without reliance on in-situ end-point detection. This is critical for nanoscale devices where deviations of even a few nanometers can significantly alter electrical, optical, or mechanical performance. Linear scaling simplifies process integration and improves reproducibility across wafers and batches.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":3,"width":529,"height":378}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":533,"height":381,"image_format":"jpeg","image_sha256":"38b33f84a9c8cf172d21ae022e8832e387c82e443279f91b84d02ab2781cb8be","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_22_fig_1.jpg","caption":"Fig. 1. Growth rate of LiF thin films as a function of deposition temperature. Lithd and $\\mathrm{TiF_4}$ pulse lengths were 2 s and purge times between these pulses were 4 s.","id":"train/atomic-layer-deposition/experimental-usecase/22/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/22/fig_1","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the growth rate (Å/cycle) as a function of the deposition temperature (°C). The growth rate of the material decreases as the deposition temperature increases, reaching at minimum at around 320 °C before slightly increasing again.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition temperature / °C | Growth rate Å / cycle |\\n|---|---|\\n| 250 | 1.5 ± 0.1 |\\n| 275 | 1.3 ± 0.1 |\\n| 300 | 1.2 ± 0.1 |\\n| 310 | 1.0 ± 0.1 |\\n| 350 | 1.2 ± 0.1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows the growth per cycles (Å/cycle) for different temperatures of deposition (between 250 °C and 350 °C).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the deposition temperature increases, the growth per cycle decreases up to a temperature of 25 °C. After this point, growth per cycle increases again.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"325 °C leads to the lowest growth rate.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At this point, growth per cycle reaches its maximum value, enabling deeper etching in a single cycle.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":634,"height":495}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/Miia Mantymaki et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":637,"height":500,"image_format":"jpeg","image_sha256":"7874440260e4e6451b2701b6df09a0dee832af9620fedb15f77ee586a95157c9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_22_fig_2.jpg","caption":"Fig. 2. Growth rate of LiF thin films as a function of $\\mathrm{TiF_4}$ pulse length at $325^{\\circ}C$ The Lithd pulse was kept at 2 s and purge times were 4 s.","id":"train/atomic-layer-deposition/experimental-usecase/22/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/22/fig_2","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the growth rate of a material in Å per cycle as a function of TiF pulse length in seconds. The growth rate increases with increasing pulse length but it slightly decreases at 2 s.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TiF, pulse length / s | Growth rate Å/cycle |\\n|---|---|\\n| 0.5 | 0.95 |\\n| 1 | 1.00 |\\n| 2 | 0.95 |\\n| 3 | 1.20 |\\n| 4 | 1.30 |\\n| 6 | 1.40 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The growth rate increases almost linearly with the length of the TiF4 pulse, but decreases slightly at 2s.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.5 s and 2 s.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No for this case, because the growth rate doesn't remain constant.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":3,"width":636,"height":493}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/Miia Mantymaki et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":641,"height":500,"image_format":"jpeg","image_sha256":"2cdebae3b5a139d9b917822c2d261b0df6245ac167cf3834ab551cded63c518d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_22_fig_3.jpg","caption":"Fig. 3. Growth rate of LiF thin films as a function of Lithd pulse length at $325^{\\circ}C$ The $\\mathrm{TiF_4}$ pulse was kept at 1 s and purge times were 4 s.","id":"train/atomic-layer-deposition/experimental-usecase/22/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/22/fig_3","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the growth rate (Å/cycle) as a function of the Lithd pulse length (s). The growth rate increases linearly with increasing lithd pulse length.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Lithd pulse length / s | Growth rate / Å / cycle |\\n|---|---|\\n| 1 | 0.75 ± 0.05 |\\n| 2 | 1.00 ± 0.05 |\\n| 3 | 1.05 ± 0.05 |\\n| 4 | 1.10 ± 0.05 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is not possible to observe this because the growth rate does not remain constant throughout the Lithd pulse length.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The growth rate increases almost linearly with an increase in the length of the Lithd pulse.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1 s of Lithd pulse length show the lowest growth rate with a value of approximately of 0.7 Å/cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Growth rate saturation can be observed as a constant values over changes in the x-axis values. In this case, increasing the Lithd pulse length to over 4 s would reveal whether the growth rate remains constant. However, it is also necessary to consider the limitations of the process itself, such as the maximum amount of Lithd that can be loaded into the reactor.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":4,"width":644,"height":490}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/Miia Mantymaki et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":647,"height":495,"image_format":"jpeg","image_sha256":"dfd9d1dbdc53bade726626cae20ddcc6a7f686f24bf302efc29e6218967d377a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_7.jpg","caption":"Figure 7. (a) Resistivity versus percentage of $\\mathrm{SnO_2}$ cycles measured using four-point probe for ALD ITO films prepared on glass at $275^{\\circ}C$ using 300 cycles. (b) Hall probe measurements of the same ITO films showing carrier concentration and mobility.","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_7","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows that resistivity initially drops sharply with increasing % SnO₂ cycles and then increases again beyond 20%.\"},{\"panel_id\":\"b\",\"text\":\"The multi-axis chart indicates that carrier concentration increases significantly with SnO₂ cycles, while mobility remains relatively constant.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| % SnO₂ Cycles | Resistivity (Ohm·cm) | Carrier Concentration (cm⁻³) | Mobility (cm²/V·s) |\\n|---------------|----------------------|------------------------------|---------------------|\\n| 0 | 1e2 | 1e19 | 10 |\\n| 5 | 1e-3 | 1e20 | 100 |\\n| 10 | 1e-3 | 1e21 | 100 |\\n| 15 | 1e-3 | — | — |\\n| 20 | 1e-3 | — | — |\\n| 25 | 1e3 | 1e22 | 100 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"25%\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Resistivity drops sharply at low SnO₂ percentages, plateaus, and then increases again beyond 20%.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Resisitivity, Carrier concentration, Mobility\"}]}]","bbox":[{"panel_id":"a","x":2,"y":1,"width":585,"height":568},{"panel_id":"b","x":650,"y":10,"width":615,"height":559}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":1270,"height":570,"image_format":"jpeg","image_sha256":"09502c89c8d6cbea94a8b031ecfff0e3d67f8a1b28fbcfcdb229c08f15cb33a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_29_figure_5.jpg","caption":"Figure 5. Normalized integrated absorbances for the $\\mathrm{W - F}_x$ stretching mode $(\\sim 680~\\mathrm{cm}^{-1})$ and the $\\mathrm{N - H}_2$ stretching mode $(\\sim 3400~\\mathrm{cm}^{-1})$ vs. reactant exposure during the (a) $\\mathrm{NH}_3$ and (b) $\\mathrm{WF}_6$ half-reactions at $600~\\mathrm{K}$ .","id":"train/atomic-layer-deposition/experimental-usecase/29/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/29/figure_5","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The normalized integrated absorbance of N-H₂ Stretch and W-Fₓ Stretch against NH3 exposure at T = 600 K.\"},{\"panel_id\":\"b\",\"text\":\"The normalized integrated absorbance of N-H₂ Stretch and W-Fₓ Stretch against WF6 exposure at T = 600 K.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reactant Exposure (Torr min) | N-H₂ Stretch | W-Fₓ Stretch |\\n|---|---|---|\\n| 0 | 0.0 | 0.0 |\\n| 10⁻³ | 0.1 | 0.9 |\\n| 10⁻² | 0.2 | 0.8 |\\n| 10⁻¹ | 0.3 | 0.7 |\\n| 1 | 0.4 | 0.6 |\\n| 10 | 0.5 | 0.5 |\\n| 10² | 0.6 | 0.4 |\\n| 10³ | 0.7 | 0.3 |\"},{\"panel_id\":\"b\",\"text\":\"| Reactant Exposure (Torr min) | N-H₂ Stretch | W-Fₓ Stretch |\\n|---|---|---|\\n| 0 | 0.0 | 0.0 |\\n| 10⁻³ | 0.1 | 0.9 |\\n| 10⁻² | 0.2 | 0.8 |\\n| 10⁻¹ | 0.3 | 0.7 |\\n| 1 | 0.4 | 0.6 |\\n| 10 | 0.5 | 0.5 |\\n| 10² | 0.6 | 0.4 |\\n| 10³ | 0.7 | 0.3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 0.1.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 0.9.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the NH3 exposure, the loss of WFx surface species occurs more rapidly than the adsorption of NH2 surface species. When compared to the WF6 exposure, the rate of loss and gain of surface species is roughly equal. The authors relate this phenomenon to NH3 molecules reacting with multiple WFx surface species.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 0.7.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":3,"width":653,"height":399},{"panel_id":"b","x":0,"y":403,"width":658,"height":436}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/J. W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":658,"height":875,"image_format":"jpeg","image_sha256":"81b8e397e377e1afaaee38dcd141f8a33bc67c3ad3fb16b1093e960e5defab42","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_29_figure_8.jpg","caption":"Figure 8. Tungsten nitride film thickness measured by ellipsometry vs. number of AB cycles at $600~\\mathrm{K}$ . The $\\mathrm{NH_3}$ exposure of $12,000\\mathrm{L}$ and $\\mathrm{WF_6}$ exposure of $4300\\mathrm{L}$ were sufficient for complete half-reactions during each AB cycle.","id":"train/atomic-layer-deposition/experimental-usecase/29/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/29/figure_8","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows a linear relationship between the number of AB cycles and film thickness, indicating a linear growth rate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| AB Cycles | Film Thickness (Å) |\\n|---|---|\\n| 3 | 7.5 |\\n| 6 | 15 |\\n| 12 | 30.5 |\\n| 19 | 48.5 |\\n| 25 | 64 |\\n| 32 | 81.5 |\\n| 48 | 122.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"75 Å.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"12,000 L.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"600 K.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2.55 Å/cycle.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":667,"height":641}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/J. W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":672,"height":647,"image_format":"jpeg","image_sha256":"5ae8985e885d69d0381b98cd173842f15dbe9cab28e0e5fd67268c22d1865492","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_29_figure_9.jpg","caption":"Figure 9. Ellipsometric measurements of the tungsten nitride film thickness deposited by three AB cycles at various substrate temperatures. Reactant exposures were sufficient for complete half-reactions at each temperature.","id":"train/atomic-layer-deposition/experimental-usecase/29/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/29/figure_9","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the relationship between film thickness and temperature, showing an increase up to 600 K followed by a plateau.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (K) | Film Thickness (Å) |\\n|---|---|\\n| 400 | 0.5 |\\n| 500 | 3.5 |\\n| 550 | 7.0 |\\n| 600 | 7.75 |\\n| 650 | 8.0 |\\n| 700 | 7.75 |\\n| 750 | 8.0 |\\n| 800 | 8.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It increases rapidly with increasing substrate temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 600 and 800 K.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the substrate temperature increases from 400 to 600 K, the tungsten nitride film thickness deposited during three AB cycles rises rapidly, indicating that the surface reactions are becoming more efficient. In this lower temperature regime, FTIR measurements suggest that the half-reactions do not fully complete, and may even result in the formation of a WF₆:NH₃ adduct species. Once the temperature exceeds 600 K, the deposited film thickness stabilizes and increases only slightly up to 800 K. This plateau corresponds to approximately 2.5 Å per AB cycle, consistent with the formation of a W₂N monolayer and confirms that the surface half-reactions proceed to completion in this higher temperature range.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":1,"width":672,"height":675}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/J. W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":680,"height":680,"image_format":"jpeg","image_sha256":"29f460e6f2e3250d768c02000c662bad4a5a73c3956a7e024ca9908c3fcd9e17","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_33_figure_3.jpg","caption":"$0.9\\mu \\mathrm{mol}\\mathrm{cm}^{-2}$ .b, Growth rate of cobalt at $300^{\\circ}C$ as a function of hydrogen dose; the cobalt dose was fixed at 2 nmol $\\mathbb{C}\\mathbb{m}^{-2}$ Figure 3 Data showing that the thicknesses of copper films approach a saturated value as the doses of the precursors are increased. a, Growth rate of copper at $250^{\\circ}C$ as a function of copper precursor dose; the hydrogen dose was fixed at $3\\mu \\mathrm{mol}\\mathrm{cm}^{-2}$ . b, Growth rate of copper at $250^{\\circ}C$ as a function of hydrogen dose; the copper dose was fixed at $4\\mathrm{nmol}\\mathrm{cm}^{-2}$ .","id":"train/atomic-layer-deposition/experimental-usecase/33/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/33/figure_3","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"line chart"},{"panel_id":"d","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Panel (a) shows the growth rate increases with precursor temperature and plateaus at ~0.045 Å/cycle above 60 °C.\"},{\"panel_id\":\"b\",\"text\":\"Panel (b) demonstrates that increasing pulse time beyond 2 s does not further increase the growth rate, indicating saturation behavior.\"},{\"panel_id\":\"c\",\"text\":\"Panel (c) shows a similar saturation with hydrogen pressure—growth rate reaches a maximum of ~0.045 Å/cycle at 2 atm.\"},{\"panel_id\":\"d\",\"text\":\"Panel (d) highlights the effect of H₂ dose, where a minimum threshold is needed to initiate growth, followed by saturation. These trends collectively illustrate the self-limiting surface reactions characteristic of ALD processes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Precursor temperature (°C) | Growth rate (Å per cycle) |\\n|---------------------------|----------------------------|\\n| 50 | 0.025 |\\n| 55 | 0.035 |\\n| 60 | 0.045 |\\n| 65 | 0.045 |\\n| 75 | 0.045 |\"},{\"panel_id\":\"b\",\"text\":\"| Pulse time (s) | Growth rate (Å per cycle) |\\n|----------------|----------------------------|\\n| 1 | 0.25 |\\n| 2 | 0.35 |\\n| 3 | 0.35 |\\n| 4 | 0.35 |\"},{\"panel_id\":\"c\",\"text\":\"| H₂ pressure (atm) | Growth rate (Å per cycle) |\\n|-------------------|----------------------------|\\n| 0 | 0.00 |\\n| 1 | 0.025 |\\n| 2 | 0.045 |\\n| 3 | 0.045 |\"},{\"panel_id\":\"d\",\"text\":\"| H₂ pressure (atm) | Growth rate (Å per cycle) |\\n|-------------------|----------------------------|\\n| 0 | 0.00 |\\n| 1 | 0.025 |\\n| 2 | 0.045 |\\n| 3 | 0.045 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Precursor pulse time, Hydrogen pressure\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 0.045 Å per cycle.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plateau observed in each panel reflects the self-limiting nature of atomic layer deposition (ALD). In ALD, once all available reactive sites on the substrate surface are saturated during a precursor pulse, further increases in precursor supply (by time, dose, or temperature) do not result in additional growth. This ensures precise thickness control and uniform film coverage. For example, once sufficient H₂ pressure or dose is supplied to reduce surface intermediates, additional hydrogen does not increase growth, maintaining a constant growth per cycle.\"}]}]","bbox":[{"panel_id":"a","x":24,"y":10,"width":657,"height":450},{"panel_id":"b","x":751,"y":8,"width":665,"height":562},{"panel_id":"c","x":24,"y":491,"width":666,"height":548},{"panel_id":"d","x":749,"y":603,"width":659,"height":538}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/BOOYONG S. LIM et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":1417,"height":1189,"image_format":"jpeg","image_sha256":"d4e57a3a4c610036481dc05c5f75df0942acbf51cbc42bf2da87647548e2e6a1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_33_figure_4.jpg","caption":"Figure 4 The linear relationship between Co film thickness on $\\mathrm{SiO}_2$ and the number of deposition cycles at $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/33/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/33/figure_4","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a linear relationship between the number of ALD cycles and the resulting film thickness in angstroms (Å). As the number of cycles increases from 0 to 3000, the film thickness increases proportionally from approximately 5 Å to 120 Å. This linear trend, supported by error bars, demonstrates a consistent growth-per-cycle (GPC) rate, which is a key indicator of controlled and repeatable deposition in ALD processes\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle number | Thickness (Å) |\\n|---|---|\\n| 0 | 5 |\\n| 100 | 10 |\\n| 1000 | 40 |\\n| 2000 | 80 |\\n| 3000 | 120 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The linear increase in film thickness with cycle number indicates a highly controlled atomic layer deposition (ALD) process where the growth-per-cycle (GPC) remains constant over time. This suggests that each ALD cycle deposits a uniform layer with no saturation or deviation, highlighting the process repeatability and reliability, which are essential for precise thickness control in thin-film applications\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"40 Å.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Linear trend between cycle number and thickness, Small error bars across all data points\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":658,"height":531}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/BOOYONG S. LIM et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":658,"height":531,"image_format":"jpeg","image_sha256":"5dc54da2d7aed122fd8748ab583bd2d9a92b1e576a906ae93d8b31881627cb6e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_figure_11.jpg","caption":"Figure 11. Average oxidation state of manganese determined from the TEY XANES (black squares).","id":"train/atomic-layer-deposition/experimental-usecase/38/figure_11","sample_id":"atomic-layer-deposition/experimental-usecase/38/figure_11","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates a progressive decrease in the average manganese oxidation state from ~3.7 to ~2.5 with increasing lithiation cycles, confirming lithium ion insertion into the lattice. This evolution indicates a transition from the initial MnO₂ phase through the LiMn₂O₄ spinel regime, followed by degradation toward an inactive MnO rock-salt–like surface state at high cycle numbers.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Amount of lithium cycles | Mn average oxidation state |\\n|--------------------------|----------------------------|\\n| MnO₂ (reference) | ~3.8 |\\n| 10 | ~3.7 |\\n| 50 | ~3.6 |\\n| 100 | ~3.25 |\\n| 200 | ~3.3 |\\n| 200 + A | ~3.1 |\\n| 300 | ~2.9 |\\n| 300 + A | ~2.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The oxidation state of Mn decreases as the lithium concentration (the amount of lithium cycles in this case, as is shown in the figure) increases.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The MnO2 sample shows an average oxidation state value close to 3.7, which decreases as the number of lithium cycles increases, as does the value for annealed samples ( after 200 and 300 cycles).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The annealed sample with 300 cycles of lithium.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Depending on the number of lithium cycles and post-treatment (with or without annealing), it is possible to produce different species (i.e. different oxidation states of Mn).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The data suggests that the undoped MnO2 does not have an oxidation state of 4+, indicating that it is not exactly MnO2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The number of lithium cycles should roughly be around 60.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"More lithium means that oxygen is not only bonded to manganese anymore but also to lithium, lowering the oxidation state of manganese.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both for 200 and 300 cycles of lithium the oxidation state decreases after an anneal.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The oxidation state is extracted from TEY XANES measurements by comparing the Mn absorption edge position and spectral shape with reference compounds of known oxidation state. This allows an average Mn valence to be assigned for each lithium cycling condition.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Mn oxidation state decreases as the number of lithium cycles increases.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It decreases slightly, from about ~3.25 to ~3.1–3.15.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Oxidation states near ~2.5 imply significant Mn³⁺ content, which can drive Jahn–Teller distortion, lattice strain, and eventual capacity fading. This highlights a trade-off between lithiation depth and structural stability.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It decreases from ~+3.7 in pristine MnO₂ to ~+2.5 in 300cLi-MnO₂-600, reflecting progressive reduction of Mn⁴⁺ to Mn³⁺ (and possibly Mn²⁺) upon lithium intercalation.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The XANES edge position is affected by factors beyond simple valence, including bond lengths, coordination geometry, and covalent/ionic character. The presence of Jahn-Teller active Mn³⁺ ions distorts the local structure, contributing to the apparent low oxidation states.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Annealed samples—200+A was annealed at 600°C and 300+A at 600°C for 10 min under N₂.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. Despite having near-stoichiometric Li₁.₁Mn₂O₄ composition, the measured oxidation state (~2.9–3.0) is below the expected +3.5, possibly due to impurity phases or structural distortions.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Perform 100 charge-discharge cycles.\\n\\nDisassemble in glovebox.\\n\\nClean and dry electrode.\\n\\nTransfer air-free to beamline.\\n\\nAlign and measure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Annealed samples show higher Mn oxidation states, indicating better structural recovery and slower degradation than non‑annealed cycled electrodes.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mn oxidation decreases toward +3 with cycling due to increased Mn³⁺. This leads to Jahn‑Teller distortion, structural instability, and capacity fade.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The steady decline in oxidation state suggests predictable, cycle‑dependent degradation, enabling reliable lifetime estimates for LiMn₂O₄ batteries.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. valence of the absorbing atom\\n2. structural variations\\n3. ligand type \\n4. geometry\\n5. coordination number\\n6. bond lengths\\n7. covalent or ionic character of the bonds\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300cLi−MnO2 and 300cLi−MnO2-600\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The determination of the oxidation states was also attempted from the average Mn−O bond lengths obtained from the EXAFS results. The analysis was based on the bond valence model50,51 where the oxidation state of an ion is correlated to the nearest neighbor distance in the metal−ligand bond. The oxidation states determined by this method varied in the range of +4 to +3.5, but without any correlation to the lithium concentration.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"+3.75.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"+2.5.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Although the trend is as expected, the measured oxidation states are unrealistically low. However, in addition to the valence of the absorbing atom, structural variations, ligand type, geometry, coordination number, bond lengths, and the covalent or ionic character of the bonds are known to have effects on the chemical shifts in the absorption spectra, which might affect the results and cause the unrealistically low oxidation states. The very low oxidation states of 300cLi−MnO2 and 300cLi−MnO2-600 could arise from some unexpected behavior related to 300cLi− MnO2, which was also noticed earlier in the shape of the XAS spectrum.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"+3.5.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 + A.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Annealing generally lowers the average oxidation state of manganese compared to the non-annealed samples.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The effect of lithium incorporation into the manganese film is a reduction in the average oxidation state of manganese. As the number of lithium cycles increases from 0 to 300, the manganese oxidation state steadily decreases from approximately +3.7 down to +2.5. This is indicating that incorporation of lithium causes manganese to gain electrons.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50 cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The average manganese oxidation state decreases steadily as the number of lithium cycles increases, indicating progressive reduction of Mn from values characteristic of MnO₂ toward lower oxidation states at higher lithium loadings.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ 2.5\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"More Li uptake, Mn reduction, Shift toward LiMn₂O₄ phase\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately +2.5.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"MnO₂ starts at a high oxidation state (~+3.8), Oxidation state gradually decreases with increasing lithium content, 100cLi−MnO₂ and 200cLi−MnO₂ show intermediate oxidation states (~+3.3 to +3.2), Annealed samples show slightly lower oxidation states than unannealed ones, 300cLi−MnO₂-600 exhibits the lowest oxidation state (~+2.5)\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The manganese oxidation state strongly influences the structural stability, electronic structure, and electrochemical behavior of Li-Mn-O materials. A decreasing oxidation state with increasing lithium content reflects changes in charge compensation and local bonding environments, which can affect lithium storage capacity, phase stability, and degradation mechanisms. Identifying unusually low oxidation states, such as those observed in highly lithiated and annealed samples, helps highlight potential structural distortions or impurity phases that may impact long-term performance in applications like lithium-ion batteries.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The average oxidation state of manganese was determined from TEY XANES measurements.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":517,"height":433}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":517,"height":433,"image_format":"jpeg","image_sha256":"7c6f3e8c252caef1e0ccf260d1de6272269cdd3fc7ed4119914eddabd5f00985","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_49_figure_5.jpg","caption":"Figure 5. a) Photocurrent density and response of the TiNTs (purple) and $\\mathrm{MoS_2 / TiNTs}$ (red, with 200 ALD cycles $\\mathrm{MoS_2}$ deposition). The photocurrent was recorded in $0.5\\mathrm{M}$ $\\mathrm{Na_2SO_4}$ electrolyte with a $0.5\\mathrm{V}$ external bias potential in the dark and under $430~\\mathrm{nm}$ light irradiation. b) Nyquist and c) MottSchottky plots of TiNTs (purple) and $\\mathrm{MoS_2 / TiNTs}$ heterostructure (red). The Nyquist plots were recorded under $430~\\mathrm{nm}$ light irradiation.","id":"train/atomic-layer-deposition/experimental-usecase/49/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/49/figure_5","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"spectra chart"},{"panel_id":"c","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares the photoelectrochemical (PEC) performance of bare Titanium Oxide Nanotubes (TiNTs, purple) and MoS₂-coated TiNT heterostructures (MoS₂/TiNTs, red). Under chopped light illumination, the MoS₂/TiNT heterostructure exhibits a significantly enhanced photocurrent density of approximately 30 μA/cm², compared to about 10 μA/cm² for bare TiNTs. This nearly threefold increase indicates improved light absorption, charge separation, and carrier transport due to the heterostructure formation.\"},{\"panel_id\":\"b\",\"text\":\"The Nyquist plot shows that the MoS₂/TiNTs sample has a much smaller semicircle radius in the high-frequency region than bare TiNTs. This reflects a lower charge-transfer resistance (R_ct) at the electrode–electrolyte interface, indicating faster interfacial charge transfer.\"},{\"panel_id\":\"c\",\"text\":\"Both samples exhibit positive slopes, confirming n-type semiconducting behavior. The MoS₂/TiNT heterostructure shows a smaller slope than bare TiNTs, corresponding to a higher donor density (N_d), which contributes to enhanced electrical conductivity and improved PEC performance.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Current Density (µA/cm²) |\\n|---------:|--------------------------:|\\n| 100 | 30 |\\n| 200 | 27 |\\n| 300 | 26 |\\n| 400 | 25 |\\n| 500 | 25 |\\n| 600 | 24 |\"},{\"panel_id\":\"b\",\"text\":\"| Z′ (kΩ) | Z″ (kΩ) | Materials |\\n|---|---| -- |\\n| 0.0 | 0.0 | TiNTs |\\n| 0.0 | 00 | MoS2/TiNTs |\\n| 0.1 | 0.4 | TiNTs |\\n| 0.1 | 0.1 | MoS2/TiNTs |\\n| 0.2 | 0.7 | TiNTs |\\n| 0.2 | 0.25 | MoS2/TiNTs |\\n| 0.3 | 0.1 | TiNTs |\\n| 0.3 | 0.3 | MoS2/TiNTs |\\n| 0.4 | -- | TiNTs |\\n| 0.4 | 0.3 | MoS2/TiNTs |\\n| 0.5 | -- | TiNTs |\\n| 0.5 | 0.29 | MoS2/TiNTs |\\n| 0.6 | -- | TiNTs |\\n| 0.6 | 0.26 | MoS2/TiNTs |\\n| 0.7 | -- | TiNTs |\\n| 0.7 | 0.22 | MoS2/TiNTs |\\n| 0.8 | -- | TiNTs |\\n| 0.8 | 3.4 | MoS2/TiNTs |\\n| 0.9 | -- | TiNTs |\\n| 0.9 | 0.57 | MoS2/TiNTs |\\n| 1.0 | -- | TiNTs |\\n| 1.0 | 0.8 | MoS2/TiNTs |\"},{\"panel_id\":\"c\",\"text\":\"| E (V) vs. (Ag/AgCl) | 1/C² (cm⁴µF²) | Material |\\n|---|---|---|\\n| -1.0 | 0.00 | TiNTs |\\n| -1.0 | 0.00 | MoS2/TiNTs |\\n| -0.5 | 0.00 |TiNTs |\\n| -0.5 | 0.00 | MoS2/TiNTs |\\n| -0.53 | 0.00 |TiNTs |\\n| -0.53 | 0.00 | MoS2/TiNTs |\\n| 0.0 | 0.9 |TiNTs |\\n| 0.0 | 0.02 | MoS2/TiNTs |\\n| 0.5 | 0.11 |TiNTs |\\n| 0.5 | 0.05 | MoS2/TiNTs |\\n| 1.0 | 0.13 | TiNTs |\\n| 1.0 | 0.06 | MoS2/TiNTs |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The bare TiNTs exhibit a peak photocurrent of approximately 10 μA/cm², whereas the MoS₂/TiNTs heterostructure reaches about 30 μA/cm², corresponding to a threefold enhancement. The immediate drop of current to zero when the light is switched off confirms that the current is purely photo-generated. This behavior demonstrates effective photo-switching and confirms the device functions as a photo-anode driven entirely by illumination.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The peak photocurrent of the MoS₂/TiNTs decreases slightly from approximately 32 to 20 µA/cm² over the measurement period. This gradual photocurrent decay indicates limited long-term stability, suggesting that the MoS₂ layer may undergo slow degradation, oxidation, or partial delamination under sustained illumination and applied bias in the Na₂SO₄ electrolyte.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The MoS₂/TiNTs sample (red) exhibits higher conductivity. This is evidenced by the flatter (smaller) slope of the red curve compared to the steeper purple curve. Since the carrier density (Nₙ) is inversely proportional to the slope of the Mott–Schottky plot, a smaller slope indicates a higher carrier density. The increased carrier density directly leads to improved electrical conductivity and enhanced photoelectrochemical performance.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The heterojunction facilitates charge transfer. The bare TiNTs show a large semicircle, indicating high charge-transfer resistance at the electrode–electrolyte interface. The MoS₂ coating forms a favorable band alignment with TiO₂, providing active sites that enhance interfacial charge transfer and reduce the resistance, resulting in a much smaller semicircle.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":3,"width":336,"height":312},{"panel_id":"b","x":348,"y":9,"width":328,"height":304},{"panel_id":"c","x":673,"y":6,"width":333,"height":308}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/Shen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":1008,"height":317,"image_format":"jpeg","image_sha256":"a650741ae4f81120e8cb27883c7e159bc32f64389ca77c7a9a2b888d8753496e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_52_figure_3.jpg","caption":"Figure 3. Saturation curves for remote plasma ALD of $\\mathrm{LiCOO_2}$ at $325^{\\circ}C$ (a) Growth rate as a function of $\\mathrm{LiO^4}$ Bu dosing time, while the $\\mathrm{CoCp_2}$ dosing time and the plasma exposure time are kept constant at $2\\mathrm{s}$ and $5\\mathrm{s}$ respectively. (b) Growth rate as a function of $\\mathrm{CoCp_2}$ dosing time, while the $\\mathrm{LiO^4}$ Bu dosing time and the plasma exposure time are kept constant at $2\\mathrm{s}$ and $5\\mathrm{s}$ respectively. The lines serve as guides to the eye.","id":"train/atomic-layer-deposition/experimental-usecase/52/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/52/figure_3","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The growth per cycle increases with increasing Li precursor dosing time until it plateaus.\"},{\"panel_id\":\"b\",\"text\":\"The growth per cycle shows a slight increase with increasing Co precursor dosing time, but remains relatively stable\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Li precursor dosing time (s) | Growth per cycle (nm) |\\n|---|---|\\n| 0 | 0.00 |\\n| 0.5 | 0.08 |\\n| 1 | 0.10 |\\n| 2 | 0.12 |\\n| 3 | 0.12 |\"},{\"panel_id\":\"b\",\"text\":\"| Co precursor dosing time (s) | Growth per cycle (nm) |\\n|---|---|\\n| 0 | 0.00 |\\n| 0.5 | 0.08 |\\n| 1 | 0.09 |\\n| 2 | 0.08 |\\n| 3 | 0.10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A plateau indicates that increasing precursor dosing time no longer increases the growth per cycle, which is consistent with surface saturation. In ALD terms, this suggests the surface reactions become self limiting once enough precursor has been supplied. Operating at or beyond the saturation point helps ensure reproducible growth and composition control.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"CoCp2 reaches saturation faster, because panel b levels off at a shorter dosing time than panel a. In panel b, the growth per cycle increases sharply and then becomes nearly constant by around the first second or less. In panel a, the curve continues rising over a broader dosing time range before leveling off.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The x axis in panel b is Co precursor dosing time (s), and the y axis in both panels is growth per cycle (nm).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"To avoid dose limited growth that would change the growth per cycle.\\n\\nTo improve run to run reproducibility by ensuring surface saturation.\\n\\nTo reduce sensitivity to small dosing time fluctuations during long depositions.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":5,"width":603,"height":427},{"panel_id":"b","x":1,"y":451,"width":603,"height":432}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/Donders et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":609,"height":886,"image_format":"jpeg","image_sha256":"c39addbbfa30afacec08423f0fbbfbdb91faaa1b68ef6328e5c644fe9e787420","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_52_figure_4.jpg","caption":"Figure 4. Thickness of $\\mathrm{LiCoO_2}$ on $\\mathrm{Si(100)}$ as a function of the number of ALD super-cycles, as measured with in situ spectroscopic ellipsometry. The used Co:Li dosing ratio is 4:1.","id":"train/atomic-layer-deposition/experimental-usecase/52/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/52/figure_4","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A line chart showing a linear relationship between the number of supercycles and thickness in nanometers\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of supercycles | Thickness (nm) |\\n|-----------------------|---------------|\\n| 0 | 0 |\\n| 50 | 20 |\\n| 100 | 40 |\\n| 150 | 60 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In situ spectroscopic ellipsometry\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Thickness increases roughly linearly with super cycle number. This indicates that the average thickness added per super cycle is approximately constant over the range shown. Such linearity is consistent with stable, repeatable growth during the super cycle process under the reported conditions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Si(100).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ratio refers to how many cycles of the Co containing sub process are applied relative to cycles of the Li containing sub process within the super cycle sequence. A 4:1 ratio means the Co process is applied more frequently than the Li process during growth. This is a process control parameter used to tune the film composition while maintaining stable thickness increase per super cycle.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":550,"height":364}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/Donders et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":556,"height":370,"image_format":"jpeg","image_sha256":"8a0473aba0d042fea8857b72f7093e918acd0f0679131c1deb078b0ef8515356","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_59_fig_9.jpg","caption":"FIG. 9. (Color online) The time-integrated intensity of the OES signal during the plasma step plotted as a function of the PDMAT dosing time in the ALD cycle. The OES signal at $388~\\mathrm{nm}$ is integrated over the $10\\mathrm{~s~H}_2 - \\mathrm{N}_2$ (98:2) plasma exposure time in the ALD cycle. The line serves as a guide to the eyes.","id":"train/atomic-layer-deposition/experimental-usecase/59/fig_9","sample_id":"atomic-layer-deposition/experimental-usecase/59/fig_9","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between the integrated OES intensity (a.u.) versus the PDMAT dosing (s). Intensity increases with increasing dosing time up to approximately three second, after which it plateaus.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| PDMAT dosing (s) | Integrated OES intensity (a.u.) |\\n|------------------|--------------------------------|\\n| 0 | 760 |\\n| 1 | 825 |\\n| 2 | 875 |\\n| 3 | 900 |\\n| 4 | 860 |\\n| 5 | 875 |\\n| 7 | 880 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The OES signal at 388 is integrated for this plot.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The integrated OES intensity increases with the PDMAT dosing time, until it reached a plateau at around 4 s.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The highest integrated OES intensity values is 900 a.u., which is reached after 3 s od PDMAT dosing.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes, because after 3 s, it is possible to observe that the curve remains constant and the integrated OES intensity is based at 388 nm, where that bond can be found.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":0,"width":604,"height":460}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/Langereis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"59","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":608,"height":464,"image_format":"jpeg","image_sha256":"056617f5ac05c09e09744731b5e8e681e5d820f4af8a18e7862eed715035f054","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_66_figure_7.jpg","caption":"Figure 7. Frequency dependence of (a) dielectric constant $\\epsilon_{\\mathrm{r}}$ and (b) dielectric loss tan $\\delta$ and (c) capacitance-voltage characteristics of TM-doped $\\mathrm{ZnO}$ films.","id":"train/atomic-layer-deposition/experimental-usecase/66/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/66/figure_7","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This plot shows dielectric constant as a function of frequency. Dielectric constant (εr) decreases with increasing frequency for all materials (Co, Fe, Ni).\"},{\"panel_id\":\"b\",\"text\":\"Plot shows the tangent delta (tanδ) as a function of frequency where tangent decreases with increasing frequency for all materials (Co, Fe, Ni).\"},{\"panel_id\":\"c\",\"text\":\"Plot shows variation of capacitance (C) as a function of applied voltage for different frequencies (100kHz, 1MHz) and materials (Co, Fe, Ni).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| frequency (Hz) | dielectric constant, εr of Co | Fe | Ni |\\n| --- | --- | --- | --- | \\n| 103 | 50 | 50 | 75 |\\n| 104 | 50 | 50 | 50 |\\n| 105 | 50 | 40 | 30 |\\n| 106 | 50 | 20 | 10 |\"},{\"panel_id\":\"b\",\"text\":\"| frequency (Hz) | tanδ of Co | Fe | Ni |\\n| --- | --- | --- | --- | \\n| 103 | 800 | 200 | 200 | \\n| 104 | 400 | 100 | 100 | \\n| 105 | 200 | 50 | 50 | \\n| 106 | 80 | 20 | 20 |\"},{\"panel_id\":\"c\",\"text\":\"| Applied Voltage (V) | C (Co, 100kHz) | C (Fe, 100kHz) | C (Ni, 100kHz) | C (Co, 1MHz) | C (Fe, 1MHz) | C (Ni, 1MHz) |\\n|---|---|---|---|---|---|---|\\n| -4 | 220 | 230 | 480 | 40 | 50 | 70 |\\n| -2 | 230 | 260 | 500 | 45 | 55 | 75 |\\n| 0 | 200 | 320 | 520 | 50 | 60| 100 |\\n| 2 | 200 | 320 | 520 | 50 | 60 | 80 |\\n| 2 | 260 | 280 | 500 | 45 | 55 | 75 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the ZnO/Ni film, it is seen that there is another polarization mechanism, which is involved at f = 10^3−10^4 Hz and significantly increases εr in this frequency range. The most likely polarization mechanism, which adds to the net polarizability in the range 10^3−10^5 Hz, is the orientation (dipolar) polarization\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The dielectric response of the ZnO/Co film is significantly weaker than that of the other two films, εr is substantially smaller than that of ZnO/Ni and ZnO/Fe films; it is also smaller than that of pure ZnO layers. However, it should be noticed that the measurement of C−f curves is performed at a small voltage (0.3−0.5 V) where the capacitance of the ZnO/Co film has the minimum in the C−V curves, while that of the other two films reaches its maximum\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A strong frequency dependence of the dielectric constant is observed, especially for Fe- and Ni-doped ZnO. Various polarization mechanisms (ionic, orientation, and space\\ncharge) can exist in the layers and give rise to an increased polarization (hence εr) at a certain frequency\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"All layers have a relatively high dielectric loss due to the increased conductivity of the layers.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":3,"width":321,"height":280},{"panel_id":"b","x":332,"y":3,"width":330,"height":272},{"panel_id":"c","x":135,"y":287,"width":390,"height":307}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/Paskaleva et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"66","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":663,"height":595,"image_format":"jpeg","image_sha256":"fc36d829be81d580b533e6685f94fb75d6a68c64284efbdff1203a27ef214194","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_12_figure_8.jpg","caption":"Figure 8. BOMD simulations performed on adsorbed precursors in the presence of five layers of water.","id":"train/atomic-layer-deposition/simulation-usecase/12/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/12/figure_8","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows a stepwise increase in temperature over time, starting at 100 K and reaching a plateau at 300 K and 580 K.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (ps) | Temperature (K) |\\n|---|---|\\n| 0 | 100 |\\n| 2 | 250 |\\n| 4 | 300 |\\n| 6 | 480 |\\n| 8 | 580 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Born-Oppenheimer Molecular Dynamics (BOMD)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The simulations start at a temperature of 100 K, and then increase over time until they reach approximately 580 K.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 fs for all the MD runs.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The temperature starts to increase at 5 ps and reaches a plateau of 580 K at approximately 7 ps.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":1,"width":665,"height":479}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. Mukhopadhyay et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":670,"height":486,"image_format":"jpeg","image_sha256":"ce80e9c64e91c5bd0a26d36be500e55fe2062a2f576ff10a2fb8d0fc2ede1327","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_12.jpg","caption":"Figure 12: Computed band gap with regards to the Pb content in the compound [94].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_12","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line graph shows the variation in computed bandgap (eV) as a function of lead (Pbₓ) in Sn₁₋ₓPbₓO. The band gap seems to increase with increase in (Pbₓ) content. This trend, calculated using Density Functional Theory (DFT), demonstrates that lead doping is an effective method for tuning the electronic properties of tin oxide without creating defect states within the band gap.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| x: Sn_{1-x}Pb_xO | band gap (eV) |\\n|---|---|\\n| 0 | 0.4 |\\n| 0.2 | 0.55 |\\n| 0.4 | 0.8 |\\n| 0.6 | 1.1 |\\n| 0.8 | 1.25 |\\n| 1 | 1.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Density Functional Theory (DFT) was used for calculations and investigate the electronic properties such as band gap here.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The band gap increases linearly as the Pb content (x) increases from 0 to 1.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Introducing 2% Sn vacancies increases SnO's band gap by 0.5 eV. This shows that defects can tune properties but often introduce disruptive gap states. In contrast, Pb alloying tunes the band gap linearly from 0.4 to 1.4 eV without creating mid-gap defect states, offering a cleaner method for electronic band engineering.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No Defect States: Alloying avoids introducing electronic trap states within the band gap, which can degrade charge carrier mobility and device efficiency.\\n\\nPredictable Tuning: The band gap changes linearly with composition, allowing for precise and predictable control over optical absorption and emission wavelengths.\"}]}]","bbox":[{"panel_id":"a","x":7,"y":1,"width":562,"height":474}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":573,"height":481,"image_format":"jpeg","image_sha256":"966769b0c24ea10bffea8355aee527c12d8e7edb17c9b1eb5f0d2dbb6f86a9aa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_20.jpg","caption":"Figure 20: Fraction of nitrogen of deposited films at a temperature of $1,800\\mathrm{K}$ with various nitrogen-to-aluminium flux ratios starting at 0.8–2.8 [195].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_20","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_20","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart image represents the fraction of Nitrogen(N) in terms of percentage as a function of various nitrogen-to-aluminium flux ratios (N : Al), values of a range from 0.8 to 2.8. The values of N fraction steadily seems to increase till 2 and then saturates at close to 50% of N fraction. The image also shows the molecular representation computed using Molecular dynamics at temperature of 1800K\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| N : Al flux ratio | N fraction (%) |\\n|---|---|\\n| 0.8 | 42 |\\n| 1.2 | 44 |\\n| 1.6 | 49 |\\n| 2.0 | 51 |\\n| 2.4 | 51 |\\n| 2.8 | 52 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Growth Rate: Decreases as temperature increases.\\n\\nCrystallinity: Enhances significantly up to 1,800 K, then saturates between 1,800 K and 2,000 K.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The N-deficient route (0.8) is more detrimental. The text explicitly links good crystallinity to a \\\"near 50% nitrogen fraction,\\\" and the visuals confirm that significant N-deficiency destroys the lattice order.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A higher N:Al flux ratio delivers more N atoms per Al atom to the growth surface, increasing the N fraction in the film toward the ideal 50%. The caption states that good crystallinity is linked to this near-stoichiometric composition. The cause is that a stoichiometric film minimizes point defects (Al or N vacancies) and anti-site defects, allowing atoms to find proper lattice positions and form a well-ordered crystal.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the reactor must be capable of delivering a highly N-rich environment (flux ratio >2:1) to achieve stoichiometric films. For a deep-UV LED, the near-perfect crystallinity resulting from this stoichiometry is critical to minimize defect-related non-radiative recombination and ensure high internal quantum efficiency for efficient light emission.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":650,"height":486}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_20.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_20.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":653,"height":495,"image_format":"jpeg","image_sha256":"d1edb38267ec92b1df9adbec0c890c9c9365ab2ea070a48275e1622d5d31013f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_5.jpg","caption":"Figure 5: Density functional theory (GGA/PBE-D3) [96] of minimum energy paths (MEPs) needed to adsorb Hacac on (a) aluminium oxide $(\\mathrm{Al}_2\\mathrm{O}_3)$ and (b) silicon dioxide $(\\mathrm{SiO}_2)$ surfaces [52].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_5","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The diagram represent the Density Functional Theory (DFT)-calculated reaction energy values comparing the chemisorption of Hacac on Al₂O₃ surface. The diagrams show the activation energy (Eₐ) and reaction energy (ΔE) for the ligand-exchange reaction where Hacac replaces a surface hydroxyl group.\"},{\"panel_id\":\"b\",\"text\":\"The diagram represent the Density Functional Theory (DFT)-calculated reaction energy values comparing the chemisorption of Hacac on SiO₂surfaces. The diagrams show the activation energy (Eₐ) and reaction energy (ΔE) for the ligand-exchange reaction where Hacac replaces a surface hydroxyl group. The key difference is that the reaction is exothermic and low-barrier on Al₂O₃ (ΔE = -0.49 eV, Eₐ = 0.01/0.25 eV) but endothermic and high-barrier on SiO₂ (ΔE = +0.98 eV, Eₐ = 2.35 eV).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction step | Energy (eV) |\\n| ------ | ------- |\\n| Physisorbed state | 0.05 |\\n| Transition State | 0.25 |\\n| Chemisorbed Product State | -0.49 |\"},{\"panel_id\":\"b\",\"text\":\"| Reaction step | Energy (eV) |\\n| ------ | ------- |\\n| Physisorbed state | 0.05 |\\n| Transition State | 2.25 |\\n| Chemisorbed Product State | 0.98 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It implies the Al–O(acac) bond is significantly stronger than the Si–O(acac) bond relative to their respective starting surface OH bonds.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It suggests performing DFT calculations of the inhibitor's adsorption reaction energy (ΔE) and activation energy (Eₐ) on both target and non-target surfaces. A successful selective process will likely require a large thermodynamic and kinetic preference (exothermic/low-barrier on target, endothermic/high-barrier on non-target) similar to the Al₂O₃/SiO₂ case shown here. This computational screen can rapidly identify promising inhibitor candidates before costly experimentation.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Physisorbed State: Hacac near the surface (0 eV reference).\\n\\n, Transition State: Peak at ~0.25 eV (Eₐ).\\n\\n, Chemisorbed Product State: Al(acac)⁺ + H₂O(g) at -0.49 eV (ΔE).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The very low Eₐ on Al₂O₃ (0.25 eV) means Hacac reacts easily at low temperature, while the much higher Eₐ on SiO₂ (2.35 eV) means it barely reacts at all under the same conditions. This large gap ensures that at typical ALD temperatures (~250–300 °C), Hacac will strongly chemisorb on Al₂O₃ but remain essentially inactive on SiO₂. As a result, the process naturally becomes highly selective without needing extreme temperatures or additional steps.\"}]}]","bbox":[{"panel_id":"b","x":606,"y":3,"width":569,"height":583},{"panel_id":"a","x":2,"y":3,"width":590,"height":580}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":1178,"height":595,"image_format":"jpeg","image_sha256":"b7acc8d9492b66000b6a4b822fdc5aae126e8272a594c40c83d99b7ac1c674b2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_27_figure_6.jpg","caption":"Figure 6. Simulated (a) growth per cycle and (b) mass density of deposited $\\mathrm{SiO_2}$ films as a function of the probability $p_{\\mathrm{P2}}$ .","id":"train/atomic-layer-deposition/simulation-usecase/27/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/27/figure_6","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows a non-linear trend where the growth per cycle increases to a maximum around pP₂ = 0.25–0.5 and then decreases at higher probabilities.\"},{\"panel_id\":\"b\",\"text\":\"shows density steadily rising with increasing pP₂, indicating denser films when P₂-type surface terminations dominate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| occupation probability pP2|growth per cycle [Å]|\\n|--------------------------------------|--------------------|\\n|0|2.2|\\n|0.25|2.7|\\n|0.5|2.6|\\n|0.75|2.5|\\n|1|2.0|\"},{\"panel_id\":\"b\",\"text\":\"| occupation probability pP2|density [g/cm3]|\\n|--------------------------------------|--------------------------|\\n|0|1.6|\\n|0.25|2.3|\\n|0.5|2.4|\\n|0.75|2.5|\\n|1|2.7|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The trends show that lower to mid-range occupation probabilities (around pP₂ = 0.25–0.50) yield higher growth per cycle, which can improve deposition throughput. Meanwhile, the steady increase in density with higher pP₂ suggests that P₂-rich growth pathways produce more compact and potentially higher-quality SiO₂ films. By balancing these opposing trends, researchers can tune PEALD process conditions to achieve films with optimal thickness, uniformity, and mechanical stability, leading to better performance in microelectronic and optical applications\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The maximum growth per cycle occurs at pP₂ ≈ 0.25.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the growth per cycle changes significantly with varying pP₂.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Growth per cycle (Å/cycle), Film density (g/cm³)\"}]}]","bbox":[{"panel_id":"a","x":38,"y":11,"width":562,"height":372},{"panel_id":"b","x":637,"y":9,"width":564,"height":373}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/Martin Becker et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":1203,"height":383,"image_format":"jpeg","image_sha256":"18fb91c64e56d826023d2f80411721f184ee6923ae3c39ec5a9c84b3b902b983","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_41507260afda38f50f2d4921e128ba2a885bf7c74e3e0c35c21b3df5b9ecfbf7.jpg","caption":"Fig. B1 - Experimental outlet pressure monitoring during various ALD cycles, as measured by the Pirani gauge.","id":"train/atomic-layer-deposition/simulation-usecase/32/41507260afda38f50f2d4921e128ba2a885bf7c74e3e0c35c21b3df5b9ecfbf7","sample_id":"atomic-layer-deposition/simulation-usecase/32/41507260afda38f50f2d4921e128ba2a885bf7c74e3e0c35c21b3df5b9ecfbf7","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the experimental outlet pressure over time for two substances, H₂O and TMA, with distinct peaks and troughs monitored using pirani gauge.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Outlet Pressure (Torr) |\\n|----------|--------------------------|\\n| 0 | 0.049 |\\n| 5 | 0.075 |\\n| 10 | 0.058 |\\n| 15 | 0.075 |\\n| 20 | 0.049 |\\n| 25 | 0.075 |\\n| 30 | 0.058 |\\n| 35 | 0.075 |\\n| 40 | 0.049 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The experimental reactor outlet pressure was monitored via the Pirani gauge during various ALD cycles, as deposition took place. The base pressure of the process i.e the system pressure during the purge step of the ALD cycle, is set at 50 mTorr, measured via the Pirani gauge.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Pirani gauge is calibrated for nitrogen (N2), while the inert gas used for the ALD process is Ar. Typically, the pressure reading by a Pirani gauge is multiplied by a correction factor, different for each gas, in order to calibrate the measurements to the real pressure value. In this study, these correction factors are unknown\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In order to have a value for the correction factor of Ar, the reactor outlet pressure was measured, for a varying Ar inlet, using a constant butterfly valve opening at the outlet.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":1012,"height":743}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/41507260afda38f50f2d4921e128ba2a885bf7c74e3e0c35c21b3df5b9ecfbf7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/41507260afda38f50f2d4921e128ba2a885bf7c74e3e0c35c21b3df5b9ecfbf7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":1017,"height":748,"image_format":"jpeg","image_sha256":"0b2e8e6803cd45447f8be26a9ac7072b34f50267ae33c4c742784898e811af55","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_13.jpg","caption":"Figure 13. Multiscale CFD plots illustrating the surface coverage (\\%) progression as a function of time for (a) 0.1 mole fraction Hacac adsorption, (b) 0.5 mole fraction BDEAS adsorption, (c) 0.1 mole fraction $\\mathrm{O_3}$ adsorption. Evaluated multiscale process times to reach full surface coverage were longer than observed mesoscopic model process times conducted from prior work [34].","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_13","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_13","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Hacac surface coverage (%) over time during adsorption (0.1 mole fraction), reaching full coverage at ~3.77 s. The progression reflects non-linear adsorption behavior due to integration of macroscopic fluid dynamics with mesoscopic surface kinetics.\"},{\"panel_id\":\"b\",\"text\":\"BDEAS surface coverage (%) over time during adsorption (0.5 mole fraction), reaching full coverage at ~6.99 s. Slower adsorption is influenced by pressure depletion zones and reagent interactions in the fluid phase.\"},{\"panel_id\":\"c\",\"text\":\"O₃ surface coverage (%) over time during adsorption (0.1 mole fraction), reaching full coverage at ~3.72 s. The curves indicate non-linear adsorption behavior and are consistent with experimental dosage times reported in the literature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s)|Hacac Coverage (%)|\\n|---------|------------------|\\n|0.0|0|\\n|1.0|25|\\n|2.0|60|\\n|3.0|90|\\n|3.77|100|\"},{\"panel_id\":\"b\",\"text\":\"| Time (s)|BDEAS Coverage (%)|\\n|---------|------------------|\\n|0.0|0|\\n|2.0|20|\\n|4.0|50|\\n|6.0|85|\\n|6.99|100|\"},{\"panel_id\":\"c\",\"text\":\"| Time (s)|O₃ Coverage (%)|\\n|---------|---------------|\\n|0.0|0|\\n|1.0|40|\\n|2.0|80|\\n|3.0|95|\\n|3.72|100|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"By analyzing the coverage progression over time, researchers can adjust operating conditions such as reagent dosage, surface pressure, and wafer exposure time to ensure full coverage without overexposure. Understanding that BDEAS requires longer process times due to slower adsorption allows for precise control of deposition thickness and prevents oversaturation. Additionally, recognizing the impact of pressure depletion zones and species interactions informs reactor design modifications, such as improved purge streams, to maintain reagent availability and optimize surface coverage kinetics for all adsorption steps.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The BDEAS step requires the longest process time, reaching full coverage at 6.99 seconds.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The integration introduces pressure depletion zones and species interactions that reduce adsorption rates, leading to longer process times in the multiscale CFD simulations compared to prior mesoscopic models.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Pressure depletion zones in the reactor, Reagent dilution and reduced surface exposure, Repulsive interactions between species in the fluid phase, Partitioning of the wafer into discrete sections for kMC simulations, which reduces spatial resolution\"}]}]","bbox":[{"panel_id":"a","x":4,"y":9,"width":498,"height":385},{"panel_id":"b","x":547,"y":9,"width":513,"height":383},{"panel_id":"c","x":273,"y":488,"width":504,"height":387}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":1061,"height":930,"image_format":"jpeg","image_sha256":"4626101f5fdf3e62753d1c2996be95e3d9416f8992e6463026ac598c8126020b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_7.jpg","caption":"Figure 7. Hacac partial pressure over time on a node in the mesh. As the wafer rotates, the pressure rises around $0.8\\mathrm{s}$ to reach the plateau and goes to 0 around $3.6\\mathrm{s}$ . The length of the straight line in red is defined as the exposure time.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_7","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 7 shows a line chart of Hacac partial pressure at a mesh node over time as a wafer rotates. The pressure rises around 0.8 s, reaches a plateau, and falls to zero around 3.6 s. The red line segment highlights the exposure time, representing the duration a wafer section is exposed to the reactant. This figure demonstrates how wafer rotation and reaction zone geometry determine exposure time distribution, which is crucial for achieving uniform surface coverage.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s)|Hacac Pressure (Pa)|\\n|---------|-------------------|\\n|0|0|\\n|0.8|60|\\n|1.5|60|\\n|3.6|0|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Wafer rotation speed (angular velocity), Geometry of the reaction zone, Position of the wafer in the reactor, Distribution and flow of reactant gases\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Increasing the angular velocity reduces the exposure time for each wafer section, while decreasing it extends the exposure time, affecting reactant coverage uniformity.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The exposure time is determined by the duration a wafer section is exposed to the reactant as it passes through a reaction zone while mounted on the rotating plate. The Hacac partial pressure rises to a plateau as the section enters the reaction zone and drops to zero as it exits. This timing depends on the wafer’s angular velocity and the shape of the reaction zone, ensuring each section receives controlled exposure for proper surface coverage.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Hacac partial pressure rises to the plateau around 0.8 s and drops back to zero around 3.6 s.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":495,"height":392}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":495,"height":392,"image_format":"jpeg","image_sha256":"15c0a8949f2ad8e91a8f7a25fa06e0780a90994c205cc27dfbf2032da9356568","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_43_figure_3.jpg","caption":"Figure 3. (a) In situ SE monitoring of $\\mathrm{Al}_2\\mathrm{O}_3$ ALD on the $\\mathrm{Ge:H}$ surface; the inset enlarges the segment in the green box. (b) TMA adsorption and growth per cycle as a function of ALD cycles; the TMA adsorption baseline (red dash line) is $\\sim 2.2\\mathrm{\\AA}$ , and the GPC baseline (blue dash line) is $\\sim 0.86\\mathrm{\\AA}$ . (c) AFM images at different $\\mathrm{Al}_2\\mathrm{O}_3$ ALD stages.","id":"train/atomic-layer-deposition/simulation-usecase/43/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/43/figure_3","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plots show how an Al₂O₃ film grows on Ge during atomic layer deposition (ALD) using TMA and H₂O. The chart a tracks film thickness vs time, Film thickness increases nearly linearly with time, with small periodic steps corresponding to individual ALD cycles driven by alternating TMA and H₂O pulses on Ge(100). The inset highlights that each TMA/H₂O sequence produces a distinct thickness increment, consistent with self‑limiting layer‑by‑layer ALD growth.\"},{\"panel_id\":\"b\",\"text\":\"the right multi axis chart tracks TMA adsorption and growth per cycle vs ALD cycles. TMA adsorption (red circles, left axis) steadily increases with cycle number but remains below a marked saturation baseline, indicating sub‑monolayer adsorption per cycle. Growth per cycle (blue squares, right axis) also increases with cycle number yet stays below its baseline, implying that while the process becomes more efficient over time, it does not reach the ideal saturated growth rate within 30 cycles.\"},{\"panel_id\":\"c\",\"text\":\"Microscopy images of Ge:H surface at different ALD cycle counts, showing increasing roughness with more cycles.{ Ge:H -> 0.294 nm , 15 ALD Cycles -> 0.439 nm , 27 ALD Cycles -> 0.626 nm }\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (min) | Thickness (Å) |\\n|---|---|\\n| 0 | 0.8 |\\n| 3 | 1.5|\\n| 6 | 2.3 |\\n| 9 | 4.3 |\\n| 12 | 7|\\n| 15 | 10 |\"},{\"panel_id\":\"b\",\"text\":\"| ALD cycles | y | TMA adsorption (Å)/Growth per cycle (Å) |\\n|---|---|---|\\n| 0 | 0 |TMA adsorption (Å) |\\n| 0 | 0 |Growth per cycle (Å) |\\n| 5 | 0.2 | TMA adsorption (Å) |\\n| 5 | 0.0076 | Growth per cycle (Å) |\\n| 10 | 0.5 | TMA adsorption (Å)|\\n| 10 | 0.017 | Growth per cycle (Å) |\\n| 15 | 0.9 | TMA adsorption (Å) |\\n| 15 | 0.2 | Growth per cycle (Å) |\\n| 20 | 1.5 | TMA adsorption (Å) |\\n| 20 | 0.4 | Growth per cycle (Å) |\\n| 25 | 2.0 | TMA adsorption (Å) |\\n| 25 | 0.60 | Growth per cycle (Å) |\\n| 30 | 2.0 | TMA adsorption (Å) |\\n| 30 | 0.8 | Growth per cycle (Å) |\"},{\"panel_id\":\"c\",\"text\":\"| Image | RMS (nm) |\\n|---|---|\\n| Ge:H | 0.294 |\\n| 15 ALD Cycles | 0.439 |\\n| 27 ALD Cycles | 0.626 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A trimethylaluminum (TMA) pulse and a water (H₂O) pulse are alternated. An inert gas purge after each pulse removes excess precursor, ensuring the surface reactions are self-limiting.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The incubation delay suggests non-uniform nucleation, which often results in a rough interface and high Interface Trap Density . This scattering can degrade carrier mobility and increase leakage current in the final device.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1 Ge:H -> 0.294 nm\\n2 15 ALD Cycles ->0.439 nm\\n3 27 ALD Cycles -> 0.626 nm \\nAs ALD cycles increases clearly surface roughness seems to increase\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The near-zero initial growth indicates substrate inhibition, where TMA reacts poorly with the Ge surface compared to an Al2O3 surface. The rising trend implies the transition from isolated \\\"island\\\" nucleation to the coalescence of a continuous film layer.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":29,"width":261,"height":218},{"panel_id":"b","x":306,"y":24,"width":314,"height":227},{"panel_id":"c","x":1,"y":276,"width":622,"height":233}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/Yuanxia Zheng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":625,"height":511,"image_format":"jpeg","image_sha256":"a141efa52ff72801217a42650663d202e6d5b97c5b36a361571a41178f37f66e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_43_figure_6.jpg","caption":"Figure 6. $\\mathrm{Al}_2\\mathrm{O}_3$ ALD $(T = 270^{\\circ}\\mathrm{C})$ on $\\mathrm{GeO}_x(5\\mathrm{\\AA}) / \\mathrm{Ge}(100)$ . (a) In situ SE monitoring of $\\mathrm{Al}_2\\mathrm{O}_3$ thickness. (b) TMA adsorption and growth per cycle (GPC) as a function of ALD cycles extracted from SE measurement; the TMA adsorption baseline (red dash line) is $\\sim 2.2\\mathrm{\\AA}$ and the GPC baseline (blue dash line) is $\\sim 0.86\\mathrm{\\AA}$ . (c) GPC/TMA-adsorption ratio extracted from SE; the ratio baseline (green dash line) is $\\sim 0.4$","id":"train/atomic-layer-deposition/simulation-usecase/43/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/43/figure_6","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This line chart shows the stepwise increase in film thickness over time during Al₂O₃ Atomic Layer Deposition (ALD) using TMA and H₂O on a GeOₓ/Ge substrate, with each thickness jump corresponding to one ALD cycle.\"},{\"panel_id\":\"b\",\"text\":\"This multi axis chart shows the TMA dose peak and growth per cycle over ALD cycles. The values seems to dip initally till 3 ALD cycles and increased slowly.\"},{\"panel_id\":\"c\",\"text\":\"This line chart shows the evolution of Growth Per Cycle (GPC) for TMA adsorption over the first 15 ALD cycles, starting from a baseline. The GPC increases from an initial low value before stabilizing, indicating a nucleation period before steady-state growth is achieved.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (min) | Thickness (Å) |\\n|------------|----------------|\\n| 0 | 0 |\\n| 2 | 1.8 |\\n| 4 | 2.7 |\\n| 6 | 5 |\\n| 8 | 8.2 |\\n| 10 | 10 |\"},{\"panel_id\":\"b\",\"text\":\"| ALD Cycles | Y (Å) | Parameter |\\n|------------|--------|------------------------|\\n| 0 | 0 | TMA dose peak (Å) |\\n| 0 | 0 | Growth per cycle (Å) |\\n| 3 | 1.32 | TMA dose peak (Å) |\\n| 3 | 0.04 | Growth per cycle (Å) |\\n| 6 | 1.29 | TMA dose peak (Å) |\\n| 6 | 0.29 | Growth per cycle (Å) |\\n| 9 | 1.9 | TMA dose peak (Å) |\\n| 9 | 0.5 | Growth per cycle (Å) |\\n| 12 | 2.21 | TMA dose peak (Å) |\\n| 12 | 0.86 | Growth per cycle (Å) |\\n| 15 | 2.2 | TMA dose peak (Å) |\\n| 15 | 0.86 | Growth per cycle (Å) |\"},{\"panel_id\":\"c\",\"text\":\"| ALD Cycles | GPC / TMA-Adsorp. |\\n|------------|--------------------|\\n| 0 | 0 |\\n| 3 | 0.04 |\\n| 6 | 0.23 |\\n| 9 | 0.30 |\\n| 12 | 0.40 |\\n| 15 | 0.37 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sequence is a TMA precursor pulse followed by a H₂O oxidant pulse. A purge step with inert gas separates each pulse to remove excess precursor and byproducts, enabling self-limiting surface reactions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The reaction on the dangling bond is significantly more exothermic (-1.74 eV) than on the H-terminated surface (-1.09 eV).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It demonstrates linear, layer-by-layer growth with a constant growth per cycle (GPC). This implies the surface reactions are self-limiting and saturate each cycle, leading to precise thickness control.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This selectivity leads to island growth rather than layer-by-layer deposition, as nucleation occurs exclusively at defect sites first. This non-uniform nucleation creates pinholes and a rough interface, which typically results in high interface trap densities and increased gate leakage current in the final device.\"}]}]","bbox":[{"panel_id":"a","x":7,"y":35,"width":199,"height":248},{"panel_id":"b","x":216,"y":36,"width":248,"height":248},{"panel_id":"c","x":475,"y":40,"width":191,"height":245}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/Yuanxia Zheng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":667,"height":284,"image_format":"jpeg","image_sha256":"404e48b113630df932745092c5f8809dfbdc46de4307b604d14a07c5efcd53a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_10.jpg","caption":"Figure 10. Simulated mass change as a function of time from the kMC model (left) and the corresponding experimental QCM measurement adopted from ref 25 (right). The different phases (DEZ pulse/purge/ $\\mathrm{H}_2\\mathrm{O}$ pulse/purge) within the ALD cycle are indicated by the vertical dashed lines. The $\\mathrm{ZnO}$ thin films are deposited at temperature $177^{\\circ}\\mathrm{C}$ in both the simulation and the experiment.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_10","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the mass deposited per unit area over time during a ZnO ALD process according to simulations. It includes labeled phases such as 'Dose DEZ', 'Purge', 'Dose H2O', and 'Purge'.\"},{\"panel_id\":\"b\",\"text\":\"The chart illustrates the mass deposited over time during a ZnO ALD process according to experimental data. It includes labeled phases such as 'Dose DEZ', 'Purge', 'Dose H2O', and 'Purge'.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Time (s)| Mass deposited / ng cm-2 | \\n|---|---|\\n| 0.0 | 155 |\\n|0.4| 155 |\\n|0.8|160|\\n|1.2|155|\\n|1.6|155|\"},{\"panel_id\":\"b\",\"text\":\"|Time (s)| Mass deposited / ng cm-2 | \\n|---|---|\\n| 0 | 120 |\\n|2| 115 |\\n|4|115|\\n|6|110|\\n|7|120|\\n|8|115|\\n|10|115|\\n|12|115|\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The gradual increase is related to the reordering at the surface to reach perfect saturation, which will not happen right from the start. It could be that this is not incorporated in the model.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The duration of a single cycle is 12 s. It seems as if the purge after the water dose is longer than required.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.7 s\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that water initially physisorbs at the surface after which the ligands are removed. Leading to a mass increase first.\"}]}]","bbox":[{"panel_id":"b","x":554,"y":7,"width":426,"height":427},{"panel_id":"a","x":1,"y":4,"width":515,"height":405}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":980,"height":434,"image_format":"jpeg","image_sha256":"13963c880061defe2c95cdb0d7b8591c7a08956312484133ce65dcac2e326738","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_13_figure_2.jpg","caption":"Figure 2. DC self-bias under varying bias powers at the (a) $\\mathrm{O_2}$ and (b) $\\mathrm{BCl_3}$ plasma steps, and under varying ICP powers at the (c) $\\mathrm{O_2}$ and (d) $\\mathrm{BCl_3}$ plasma steps.","id":"train/atomic-layer-etching/experimental-usecase/13/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/13/figure_2","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"line chart"},{"panel_id":"d","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between bias power and DC self-bias for O2 plasma step at ICP power of 400 W.\"},{\"panel_id\":\"b\",\"text\":\"The chart shows the relationship between bias power and DC self-bias for BCl3 plasma step at ICP power of 400 W.\"},{\"panel_id\":\"c\",\"text\":\"The chart shows the relationship between ICP power and DC self-bias for O2 plasma step at bias power of 3 W.\"},{\"panel_id\":\"d\",\"text\":\"The chart shows the relationship between ICP power and DC self-bias for BCl3 plasma step at bias power of 2 W.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Bias Power [W] | DC self-bias [V] |\\n|---|---|\\n| 0 | |\\n| 1 | |\\n| 2 | |\\n| 3 | 5 |\\n| 4 | 10 |\\n| 5 | 15 |\\n| 6 | 20 |\"},{\"panel_id\":\"b\",\"text\":\"| Bias Power [W] | DC self-bias [V] |\\n|---|---|\\n| 0 | |\\n| 1 | |\\n| 2 | 5 |\\n| 3 | 10 |\\n| 4 | 13 |\\n| 5 | 17 |\\n| 6 | 21 |\"},{\"panel_id\":\"c\",\"text\":\"| ICP power [W] | DC Self-bias [V] |\\n|---|---|\\n| 250 | |\\n| 300 | |\\n| 350 | |\\n| 400 | 4.0 |\\n| 450 | 4.1 |\\n| 500 | 4.2 |\"},{\"panel_id\":\"d\",\"text\":\"| ICP power [W] | DC Self-bias [V] |\\n|---|---|\\n| 150 | 11 |\\n| 200 | 10 |\\n| 250 | 8 |\\n| 300 | 6 |\\n| 350 | 4 |\\n| 400 | 4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"400 W.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It increases linearly.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It decreases linearly.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3 W.\"}]}]","bbox":[{"panel_id":"a","x":21,"y":8,"width":510,"height":407},{"panel_id":"b","x":578,"y":8,"width":526,"height":405},{"panel_id":"c","x":3,"y":455,"width":543,"height":404},{"panel_id":"d","x":573,"y":462,"width":540,"height":400}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/Low-Damage and Self-Limiting (Al)GaN Etching Process.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":1114,"height":867,"image_format":"jpeg","image_sha256":"e7c6346018864fd107a2d0b7eefa8b491ecf0215d4cc941fa534113595868c16","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_13_figure_6.jpg","caption":"Figure 6. Etch rate per cycle of the digital etching performed under (a) varying $\\mathrm{O_2}$ plasma times and fixed HCl dipping time and (b) varying HCl dipping times and fixed $\\mathrm{O_2}$ plasma time.","id":"train/atomic-layer-etching/experimental-usecase/13/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/13/figure_6","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch rate increases with increasing O₂ plasma time up to 2 minutes, after which it plateaus.\"},{\"panel_id\":\"b\",\"text\":\"The etch rate increases with increasing dipping time in HCl up to 4 minutes, after which it plateaus.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| O₂ plasma time [min] | Etch rate [nm/cycle] |\\n|---|---|\\n| 0 | 0.0 |\\n| 1 | 0.3 |\\n| 2 | 0.5 |\\n| 3 | 0.5 |\\n| 4 | 0.5 |\"},{\"panel_id\":\"b\",\"text\":\"| Dipping time in HCl at 80 °C [min] | Etch rate [nm/cycle] |\\n|---|---|\\n| 0 | 0.0 |\\n| 2 | 0.4 |\\n| 4 | 0.5 |\\n| 5 | 0.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"5 minutes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.45 nm/cycle.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"30 W.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.5 nm/cycle.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":572,"height":427},{"panel_id":"b","x":667,"y":7,"width":552,"height":426}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/Low-Damage and Self-Limiting (Al)GaN Etching Process.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":1222,"height":434,"image_format":"jpeg","image_sha256":"d8152c77fe901418877268e7d5cf95e7a30cf31e6a708d55470ac4986541184d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_2.jpg","caption":"Figure 2. Mass change versus time during $\\mathrm{Al}_2\\mathrm{O}_3$ ALE at $200^{\\circ}\\mathrm{C}$ using HF and $\\mathrm{Sn(acac)}_2$ as the reactants. Reproduced with permission from ref 5. Copyright 2015 American Chemical Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_2","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the change in mass over time. A linear decrease in mass change can be seen over time at 200 °C on Al2O3. The process was performed with an exposure time of 1 s for Sn(acac)2 and 1 s of HF, with a 30 s purge between each step.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass Change (ng/cm²) |\\n|---|---|\\n| 0 | 80 |\\n| 2000 | -200 |\\n| 4000 | -450 |\\n| 6000 | -700 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Hf and Sn(acac)2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mass change decreases linearly with increasing time.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The experiment was performed at 200 °C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"-8.4 ng/(cm2 cycle)\"}]}]","bbox":[{"panel_id":"a","x":5,"y":-1,"width":660,"height":517}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":669,"height":525,"image_format":"jpeg","image_sha256":"ae3dd52e2be2fdcde7bbdc16286ced01d799e0d9d5bd9489c9d99f3dc9964af0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_11.jpg","caption":"Figure 11. Mass change versus time during $\\mathrm{VO}_2$ ALE using $\\mathrm{SF}_4$ and $\\mathrm{Sn(acac)}_2$ as the reactants at $200^{\\circ}\\mathrm{C}$ . Etch rate is $0.30\\mathrm{\\AA}$ /cycle.","id":"train/atomic-layer-etching/experimental-usecase/17/figure_11","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_11","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the mass change during atomic layer etching (ALE) of VO₂ at 200 °C over 50 cycles. A steady linear decrease in mass is observed, reaching approximately –600 ng/cm² by 5000 seconds. The etch rate is specified as 0.30 Å/cycle, and the process involves alternating pulses of SF₄ and Sn(acac)₂, each with pulse and purge times indicated as \\\"3–55–3–55\\\". The linear profile confirms self-limiting and uniform removal per cycle, consistent with ideal ALE behaviour.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass Change (ng/cm²) |\\n|----------|----------------------|\\n| 0 | 150 |\\n| 1000 | 0 |\\n| 2000 | -150 |\\n| 3000 | -300 |\\n| 4000 | -450 |\\n| 5000 | -600 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.30 Å/cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SF₄: 3 s pulse, 55 s purge , Sn(acac)₂: 3 s pulse, 55 s purge\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The linear decrease in mass over time suggests a consistent and self-limiting etching mechanism, which is characteristic of atomic layer etching. The use of alternating SF₄ and Sn(acac)₂ exposures, each followed by a purge, appears to produce uniform mass loss per cycle. The defined etch rate of 0.30 Å/cycle confirms precise and repeatable removal of material. This behavior is essential for achieving nanoscale control in ALE processes, particularly in applications requiring high fidelity and minimal damage to underlying layers.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":664,"height":527}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":664,"height":527,"image_format":"jpeg","image_sha256":"899157dcc9797dae1c63eb1b0a8ca737b57b06a6d0ad9a39738c64f2606ee212","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_12.jpg","caption":"Figure 12. Expanded view of three $\\mathrm{VO}_2$ ALE cycles from Figure 11 showing mass gain during the $\\mathrm{SF}_4$ exposure and mass loss during $\\mathrm{Sn(acac)}_2$ exposure.","id":"train/atomic-layer-etching/experimental-usecase/17/figure_12","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_12","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates mass change (in ng/cm²) as a function of time during the atomic layer etching (ALE) of VO₂ at 200°C. The etching process involves alternating exposures to SF₄ and Sn(acac)₂, as labeled by the arrows on the plot. Distinct mass loss and gain events are observed during the SF₄ and Sn(acac)₂ steps, respectively. The graph captures both the etching half-cycle (mass loss from SF₄) and the subsequent precursor adsorption step (mass gain from Sn(acac)₂), culminating in a repeatable etch pattern. The label \\\"MCPC\\\" denotes the minimum mass point per cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time(s) | Mass Change (ng/cm²) |\\n|---|---|\\n| 1150 | -30 |\\n| 1200 | -40 |\\n| 1250 | -50 |\\n| 1300 | -60 |\\n| 1350 | -70 |\\n| 1400 | -80 |\\n| 1450 | -90 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sharp drop in mass during SF₄ exposure suggests that SF₄ acts as the primary etching agent in the ALE cycle. Its interaction with the VO₂ surface likely results in the formation and removal of volatile byproducts, leading to a measurable decrease in surface mass. This aligns with the expected function of SF₄ in selectively breaking bonds and removing material from the surface layer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mass increases during Sn(acac)₂ exposure, confirming its adsorption onto the surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SF₄, Sn(acac)₂\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":670,"height":553}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":670,"height":553,"image_format":"jpeg","image_sha256":"3bba86be54d1c4aaf2f9db6db38aa0e3550784fb44a2bcee0af8eaca3fb4a8b8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_13.jpg","caption":"Figure 13. First three cycles of $\\mathrm{VO}_2$ ALE using $\\mathrm{SF}_4$ and $\\mathrm{Sn(acac)}_2$ at $200^{\\circ}\\mathrm{C}$ showing initial mass gain from fluorination during $\\mathrm{SF}_4$ exposure and mass changes during the first $\\mathrm{Sn(acac)}_2$ exposure and subsequent $\\mathrm{SF}_4$ and $\\mathrm{Sn(acac)}_2$ exposures.","id":"train/atomic-layer-etching/experimental-usecase/17/figure_13","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_13","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a mass change profile over time during a VO₂ atomic layer etching (ALE) process conducted at 200 °C. The mass oscillations correspond to alternating exposures of SF₄ and Sn(acac)₂, clearly indicated by arrows. Each cycle begins with a mass loss during SF₄ exposure, suggesting etching, followed by a mass gain during Sn(acac)₂ dosing, indicative of precursor adsorption. The overall trend highlights the stepwise nature of the ALE process, where the mass change remains tightly controlled and periodic, showcasing the self-limiting behavior typical of atomic layer processing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time(s) | Mass Change (ng/cm²) |\\n|---|---|\\n| 0 | 0 |\\n| 50 | 27 |\\n| 100 | 56 |\\n| 150 | 28 |\\n| 200 | 27 |\\n| 250 | 0 |\\n| 300 | -27 |\\n| 350 | -56 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200°C\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SF₄ , Sn(acac)₂\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The periodic mass increases and decreases suggest a well-defined ALE process, where SF₄ causes mass loss during etching and Sn(acac)₂ leads to a mass gain through precursor adsorption. The regularity of the mass changes with each cycle indicates that the reactions are self-limiting and repeatable, hallmarks of a successful atomic layer etching mechanism. This confirms that the ALE process is tightly controlled at 200°C, producing predictable material removal and surface renewal with each precursor pulse.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":667,"height":539}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":667,"height":539,"image_format":"jpeg","image_sha256":"eb136fa43deb59d03ecbbb8a561ab5073604eb33f43f15f6a97819fc7d722bac","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_14.jpg","caption":"Figure 14. Mass gains during fluorination of the initial $\\mathrm{VO}_2$ ALD film with either $\\mathrm{SF}_4$ or HF. $\\mathrm{SF}_4$ exposure at $500 \\mathrm{mTorr}$ leads to a higher mass gain than HF exposures at either 60 or $500 \\mathrm{mTorr}$ .","id":"train/atomic-layer-etching/experimental-usecase/17/figure_14","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_14","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows mass gain over time during fluorination of VO₂ at 200 °C using three different conditions: SF₄ at ~500 mTorr, HF at ~500 mTorr, and HF at ~60 mTorr. All three conditions exhibit a sharp increase in mass at around 30 s, indicating fluorine uptake, followed by a plateau, suggesting saturation. SF₄ leads to the highest mass increase (~32 ng/cm²), followed by HF at higher pressure (~18 ng/cm²) and HF at lower pressure (~10 ng/cm²). These differences highlight the influence of both fluorine source and pressure on the extent of fluorination.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | SF₄ ~500 mTorr | HF ~500 mTorr | HF ~60 mTorr |\\n|----------|----------------|----------------|---------------|\\n| 0 | 0 | 0 | 0 |\\n| 15 | 0 | 0 | 0 |\\n| 30 | 32 | 18 | 10 |\\n| 45 | 32 | 18 | 10 |\\n| 60 | 32 | 18 | 10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SF₄ at ~500 mTorr.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SF₄ at ~500 mTorr , HF at ~500 mTorr , HF at ~60 mTorr\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure shows that higher pressure significantly enhances the effectiveness of HF as a fluorination agent. At 500 mTorr, HF leads to a mass increase of approximately 18 ng/cm², while at 60 mTorr, the mass gain drops to about 10 ng/cm². This suggests that greater precursor availability at higher pressures improves surface fluorination. The consistent plateau observed in both HF traces further indicates that surface saturation is still achieved, but the extent of uptake is pressure-dependent.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":667,"height":541}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":667,"height":541,"image_format":"jpeg","image_sha256":"da27dbdb34182370199d1867239118d24fc924c9fcbc3641db5eaf671e12ab25","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_2.jpg","caption":"Figure 2. Expanded view of three $\\mathrm{Al}_2\\mathrm{O}_3$ ALE cycles from Figure 1 showing mass gain during the $\\mathrm{SF}_4$ exposure and mass loss during $\\mathrm{Sn(acac)}_2$ exposure.","id":"train/atomic-layer-etching/experimental-usecase/17/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_2","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This line chart presents mass change data during Al₂O₃ atomic layer etching (ALE) at 200°C, showing stepwise decreases in mass following alternating exposures to SF₄ and Sn(acac)₂. Distinct mass loss events (ΔM) occur upon each SF₄ pulse, indicating volatile byproduct formation from fluorination. The subsequent Sn(acac)₂ exposures yield mass gains, consistent with precursor adsorption. The black dashed arrow labeled MCPC highlights a stable mass plateau following precursor saturation, marking the point of maximum chemisorbed precursor coverage.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass Change (ng/cm²) |\\n|----------|----------------------|\\n| 13700 | -250 |\\n| 13720 | -255 |\\n| 13740 | -257 |\\n| 13760 | -258 |\\n| 13780 | -260 |\\n| 13800 | -263 |\\n| 13820 | -265 |\\n| 13840 | -266 |\\n| 13860 | -268 |\\n| 13880 | -269 |\\n| 13900 | -270 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"MCPC refers to the Maximum Chemisorbed Precursor Coverage.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SF₄ removes surface oxygen , Sn(acac)₂ replenishes surface metal sites\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mass profile displays repeated and saturating steps, where each pulse of SF₄ causes a predictable mass loss (etch step), followed by a stable plateau after Sn(acac)₂ adsorption. The return to similar mass levels after each Sn(acac)₂ exposure indicates that surface sites become fully occupied and no further mass uptake occurs until the next etch step. This cyclical pattern, along with the MCPC plateau, supports the self-limiting mechanism characteristic of ALE, ensuring precise and controlled etch per cycle behaviour.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":539}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":669,"height":539,"image_format":"jpeg","image_sha256":"52fc7227f4e63ab18cdcfa1be1e6ed28670d6bdffec458144c80f86bc7965ed2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_5.jpg","caption":"Figure 5. First three cycles of $\\mathrm{Al}_2\\mathrm{O}_3$ ALE using $\\mathrm{SF}_4$ and $\\mathrm{Sn(acac)}_2$ at $200^{\\circ}\\mathrm{C}$ showing initial fluorination mass gain during $\\mathrm{SF}_4$ exposure, subsequent mass changes during the first $\\mathrm{Sn(acac)}_2$ exposure, and subsequent $\\mathrm{SF}_4$ and $\\mathrm{Sn(acac)}_2$ exposures.","id":"train/atomic-layer-etching/experimental-usecase/17/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_5","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart presents the mass change over time during atomic layer etching (ALE) of Al₂O₃ at 200 °C. The process alternates between SF₄ and Sn(acac)₂ exposures, with each reagent inducing distinct mass gain or loss steps. The mass increases sharply following each Sn(acac)₂ dose and decreases following SF₄ exposure, consistent with a ligand-exchange-driven etch mechanism. The repeatability of these mass shifts across cycles demonstrates the controlled and cyclical nature of the ALE process.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass Change (ng/cm²) |\\n|----------|----------------------|\\n| 0 | 0 |\\n| 50 | 40 |\\n| 100 | 80 |\\n| 150 | 60 |\\n| 200 | 100 |\\n| 250 | 60 |\\n| 300 | 100 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mass change profile shows distinct, repeatable mass gains upon Sn(acac)₂ exposure and mass losses upon SF₄ exposure, consistent with a two-step self-limiting reaction mechanism. This cyclic pattern confirms that Al₂O₃ undergoes a controlled etching process. Sn(acac)₂ deposits organic ligands or intermediate complexes on the surface, increasing mass, while SF₄ likely facilitates removal of fluorinated byproducts, reducing mass. The regularity of these changes demonstrates a stable and reproducible ALE process.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During Sn(acac)₂ exposure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Reproducible cyclic mass change, distinct etch and deposition phases, stable magnitude across cycles, consistent thermal conditions at 200 °C\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":533}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":669,"height":533,"image_format":"jpeg","image_sha256":"552079d405aa98307b4215a07a6866659fd2f37b3d52f1b334941ff7ac51299e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_8.jpg","caption":"Figure 8. Mass change versus time during 125 cycles of $\\mathrm{VO}_2$ ALD at $150^{\\circ}\\mathrm{C}$ using TEMAV and $\\mathrm{H}_2\\mathrm{O}$ as the reactants. Growth rate is $0.63 \\mathrm{Å / cycle}$ .","id":"train/atomic-layer-etching/experimental-usecase/17/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_8","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This line graph displays the mass change of a VO₂ film during atomic layer deposition (ALD) at 150 °C over the course of 125 cycles. The increase in mass is linear with respect to time, indicating a highly consistent and reproducible deposition process. The graph annotates a growth rate of 0.63 Å/cycle, and the pulse sequence for the precursors (TEMAV and H₂O) is noted as part of the experimental procedure. The steady mass gain confirms the self-limiting, layer-by-layer nature of ALD and supports the reliability of the chosen conditions for high-quality VO₂ film growth.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass Change (ng/cm²) |\\n|----------|-----------------------|\\n| 0 | 0 |\\n| 5000 | 1400 |\\n| 10000 | 2100 |\\n| 15000 | 2800 |\\n| 20000 | 3500 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The linear mass gain over time confirms that the VO₂ ALD process at 150 °C is self-limiting and highly reproducible. Each ALD cycle contributes a consistent amount of mass, as shown by the steady slope, which reflects a uniform deposition rate across the 125 cycles. This suggests that both precursor pulses, TEMAV and H₂O, are saturating the surface reactions efficiently, enabling the controlled growth of conformal VO₂ films. The annotated growth rate of 0.63 Å/cycle further validates the precision and scalability of the process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.63 Å/cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Linear, stable mass gain, constant growth rate, efficient precursor saturation\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":672,"height":564}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":672,"height":564,"image_format":"jpeg","image_sha256":"673fc6390596014339d486ed850d3d3b6802afe33dd5c6f1a5c9eac31230f00c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_22_figure_1.jpg","caption":"Figure 1. (a) Mass changes observed by in situ QCM during growth and subsequent etching of $\\mathrm{MoS}_2$ films on alumina at $200^{\\circ}\\mathrm{C}$ . The blue arrow indicates the region of $\\mathrm{MoS}_2$ ALD, and the orange arrow indicates the region of $\\mathrm{MoS}_2$ ALE. (b) In situ QCM data during two cycles of $\\mathrm{MoS}_2$ ALE. A mass gain of $\\sim 42\\mathrm{ng} / \\mathrm{cm}^2$ can be measured after the $\\mathrm{MoF}_6$ dose, followed by a net mass loss of $19\\mathrm{ng} / \\mathrm{cm}^2$ following the $\\mathrm{H}_2\\mathrm{O}$ dose. Orange and blue markers at the bottom of the figure indicate $\\mathrm{MoF}_6$ and $\\mathrm{H}_2\\mathrm{O}$ doses, respectively.","id":"train/atomic-layer-etching/experimental-usecase/22/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/22/figure_1","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart depicts mass change during sequential deposition and etching stages over elapsed time. The deposition phase (blue arrow) shows a steady increase in mass, while the etching phase (orange arrow) leads to a gradual decrease, indicating material removal.\"},{\"panel_id\":\"b\",\"text\":\"The line chart illustrates real-time mass changes during alternating exposures to H₂O and MoF₆, visualised through stepwise increases and decreases. Annotated bars indicate the timing of each precursor pulse, and labeled Δ values quantify the mass gain and loss per cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Elapsed Time (s) | Mass Change (ng/cm²) |\\n|------------------|----------------------|\\n| 0 | 0 |\\n| 5 | ~13 |\\n| 10 | ~26 |\\n| 15 | ~39 |\\n| 17 | ~42 (peak) |\\n| 20 | ~37 |\\n| 25 | ~25 |\\n| 30 | ~12 |\\n| 35 | ~0 |\"},{\"panel_id\":\"b\",\"text\":\"| Elapsed Time (s) | Mass Change (ng/cm²) |\\n|------------------|----------------------|\\n| 0 | 0 |\\n| 10 | ~42 |\\n| 12 | ~23 |\\n| 20 | ~65 |\\n| 22 | ~46 |\\n| 30 | ~88 |\\n| 32 | ~69 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"H₂O, MoF₆\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Panel (b) shows mass gain and loss in response to alternating pulses of H₂O and MoF₆. The plateaus between each pulse and the consistent magnitude of change suggest that the surface reactions saturate at each step, characteristic of self-limiting behavior in atomic layer etching (ALE). The consistent Δ mass values following each precursor exposure reinforce the interpretation that a stoichiometric, repeatable reaction occurs with each cycle, indicative of controlled surface etching rather than continuous etching or deposition.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ 42 ng/ cm²\"}]}]","bbox":[{"panel_id":"a","x":38,"y":16,"width":469,"height":358},{"panel_id":"b","x":35,"y":402,"width":471,"height":351}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/Thermal Atomic Layer Etching of MoS2 Using MoF6 and H2O.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":509,"height":756,"image_format":"jpeg","image_sha256":"ddbeac8b76fa32075689025da3ed985686d7710c74b976a717f706dc8e3409ce","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_22_figure_2.jpg","caption":"Figure 2. QCM saturation curves for precursors (a) $\\mathrm{MoF}_6$ and (b) $\\mathrm{H}_2\\mathrm{O}$ during ALE at $200^{\\circ}\\mathrm{C}$ . ALE timing sequence followed $X / 20 / 3.5 / 20$ and $1 / 20 / X / 20$ s for $\\mathrm{MoF}_6$ and $\\mathrm{H}_2\\mathrm{O}$ , respectively, where $X$ was 0.5, 1.0, 1.5, 2.0, and 3.0 (and 4.0 for $\\mathrm{H}_2\\mathrm{O}$ ). Figure 3. QCM measurements of averaged MCPC between etching temperatures of $100 - 300^{\\circ}\\mathrm{C}$ using the timing sequence $1 - 20 - 2.5 - 20^{\\circ}\\mathrm{C}$ . The mass loss increases dramatically with the etching temperature.","id":"train/atomic-layer-etching/experimental-usecase/22/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/22/figure_2","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart displays the effect of temperature on the mass change per cycle during a process governed by the recipe \\\"1/20/2.5/20\\\". As the temperature increases from 100°C to 300°C, the mass change becomes increasingly negative, indicating greater mass loss per cycle at higher temperatures. This trend suggests that etching becomes more efficient or aggressive as the temperature rises, especially beyond 200°C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Mass Change Per Cycle (ng/cm²) |\\n|------------------|-------------------------------|\\n| 100 | 0 |\\n| 150 | -10 |\\n| 200 | -20 |\\n| 250 | -100 |\\n| 300 | -250 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"-100 ng/cm²\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"100°C, 150°C, 200°C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure demonstrates that increasing temperature leads to a more significant negative mass change per cycle, indicating enhanced etching. From 100°C to 200°C, the mass loss increases gradually. However, beyond 200°C, the rate of mass loss accelerates sharply, with the most substantial decrease observed at 300°C. This suggests a temperature threshold beyond which the etching process becomes markedly more aggressive, possibly due to increased reactivity or volatilisation of etch products.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":567,"height":433}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/Thermal Atomic Layer Etching of MoS2 Using MoF6 and H2O.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":567,"height":433,"image_format":"jpeg","image_sha256":"19718f292ac0524baf94ee816bc16fd8c981698c9d20f3cefde6e95924f3c0b3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_16.jpg","caption":"Figure 16. Average RMS roughness of $\\mathrm{ZnS}$ ALD films grown at $100^{\\circ}\\mathrm{C}$ and after $\\mathrm{ZnS}$ ALD at $300^{\\circ}\\mathrm{C}$ . The $\\mathrm{ZnS}$ film thickness before $\\mathrm{ZnS}$ ALD was $30 \\mathrm{nm}$ .","id":"train/atomic-layer-etching/experimental-usecase/23/figure_16","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_16","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between the number of ALE cycles and the RMS roughness of a material. As the number of ALE cycles increases, the RMS roughness initially decreases slightly and then sharply increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of ALE Cycles | RMS Roughness (Å) |\\n|---|---|\\n| 0 | 7.26 |\\n| 20 | 6.05 |\\n| 40 | 7.74 |\\n| 60 | 10.77 |\\n| 80 | 17.94 |\\n| 100 | 25 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Tracking roughness is critical because it is a direct indicator of etch uniformity and mechanism; increasing roughness signals loss of layer-by-layer control and the onset of undesirable, non-ideal etching that can degrade device performance. Perform 20 ALE cycles on the sample.\\n\\n2. Transfer the sample to an atomic force microscope (AFM).\\n\\n3. Measure and calculate the RMS roughness over a defined area.\\n\\n4. Repeat steps 1-3 for the next set of cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For an atomically smooth final surface, this ALE process is fundamentally limited. The data shows it cannot be run indefinitely; the roughening after ~60 cycles defines a hard limit on how much material can be removed while maintaining smoothness, unlike an ideal isotropic etch that may maintain a constant roughness.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The trend shows an initial smoothing stage (roughness decreases slightly) followed by a severe roughening stage. The sharp increase likely occurs when the ALE process breaks down, transitioning from a self-limiting, uniform reaction to a non-uniform one where etchant preferentially attacks defects, grain boundaries, or chemically distinct regions, creating a pitted and rough morphology.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the recipe is only suitable for shallow etching. To etch a deep trench, you would need many more than 60 cycles, but the severe post-60-cycle roughening would make the trench sidewalls and bottom unacceptably rough, increasing scattering loss and harming device performance. The process must be modified or a different chemistry found for deep etches.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":3,"width":669,"height":560}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_16.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":672,"height":566,"image_format":"jpeg","image_sha256":"98f2b4f9aa991c95dcfbedd66b27f4b32165fe72dedbdfafb912e48121e88f6e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_3.jpg","caption":"Figure 3. Thickness of $\\mathrm{ZnS}$ film versus number of $\\mathrm{ZnS}$ ALE cycles using HF and TMA as reactants at $300^{\\circ}\\mathrm{C}$ . Initial $\\mathrm{ZnS}$ ALD films were grown at $100^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/23/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_3","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line plot represents the thickness of ZnS film measured against number of ZnS ALE cycles using HF and TMA as reactants at 300 °C. Initial ZnS ALD films in this study were grown at 100 °C. The etch rate is approximately 2 Å per cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of ALE Cycles | ZnS Thickness (Å) |\\n|---|---|\\n| 0 | 200 |\\n| 10 | 180 |\\n| 20 | 160 |\\n| 30 | 140 |\\n| 40 | 120 |\\n| 50 | 100 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. HF Pulse: Reacts with the ZnS surface to convert it to a volatile zinc fluoride (e.g., ZnF₂) and a sulfur-containing layer, or to form a modified, fluorinated surface.\\n\\n2. TMA Pulse: Reacts with the modified surface (e.g., with sulfur or fluorine) to produce volatile byproducts (like AlF₃, (CH₃)₂S), completing the removal of a thin layer. The TMA step acts as the co-reactant that removes the modified surface species left after HF exposure, regenerating a reactive surface for the next HF pulse and enabling the cyclic, self-limiting removal.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For damage-free etching over sensitive materials, the thermal ALE process is strongly preferable. The trade-off is potentially slower etch rates and more specific chemistry development, but it preserves the integrity of delicate sub-layers.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ALD at 100°C typically produces a less dense, more disordered, and potentially impurity-containing ZnS film. This porous, defective microstructure presents a higher surface area and more reactive sites for the HF and TMA etchants to attack, leading to a higher removal per cycle compared to a denser film deposited at a higher temperature.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This enables the fabrication of high-precision optical nanostructures like waveguides, photonic crystals, or etch-stop layers. The atomic-level control allows engineers to define features with vertical sidewalls and exact depths, which is critical for controlling light propagation, resonant modes, and interference effects in miniaturized photonic devices.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":662,"height":526}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":666,"height":533,"image_format":"jpeg","image_sha256":"21e88c0c955e9513fa45211bfe85798a11029cc2ff351b583b1181111da626aa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_26_fig_3.jpg","caption":"Fig. 3. (a) Etching depth of the ALE process. (b) Etching level for etch step and ALE process. (c) Roughness image of MOCVD reference, (d) $\\mathrm{Cl}_2$ plasma etching, and (e) ALE.","id":"train/atomic-layer-etching/experimental-usecase/26/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/26/fig_3","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"bar chart"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":259,"height":207},{"panel_id":"b","x":292,"y":16,"width":275,"height":195},{"panel_id":"c","x":0,"y":226,"width":190,"height":201},{"panel_id":"d","x":207,"y":229,"width":169,"height":199},{"panel_id":"e","x":394,"y":230,"width":173,"height":198}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/A Normally-Off GaN MIS-HEMT Fabricated.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":567,"height":428,"image_format":"jpeg","image_sha256":"4a913e299febca04f4c754faf33cdfb41f2eaeea896a77bbdc69472d2cebb17c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_29_fig_1.jpg","caption":"FIG. 1. EPC of ALE for the AlGaN film as a function of self-bias voltage for a fixed $30\\mathrm{s}$ of Ar plasma exposure in the removal step: (i) incomplete removal, (ii) ALE window, and (iii) sputtering.","id":"train/atomic-layer-etching/experimental-usecase/29/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/29/fig_1","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between self-bias voltage and etch depth per cycle. There is a linear increase in etch depth with increasing self-bias voltage after the ALE window.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Self-Bias Voltage (V) | Etch Depth per Cycle (nm) |\\n|---|---|\\n| 0 | 0 |\\n| 25 | 0 |\\n| 30 | 0.3 |\\n| 35 | 0.5 |\\n| 40 | 0.6 |\\n| 45 | 0.6 |\\n| 50 | 0.6 |\\n| 55 | 0.6 |\\n| 60 | 0.8 |\\n| 65 | 0.9 |\\n| 70 | 1.0 |\\n| 75 | 1.2 |\\n| 80 | 1.5 |\\n| 85 | 1.7 |\\n| 90 | 2.0 |\\n| 95 | 2.2 |\\n| 100 | 2.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With the self-bias voltage the accelaration of ions is influenced, which are affected the most.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In that part of the bias range, sputtering is detected, this looks more like continuous reactive ion etching than like ALE.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the EPC, the ALE window should be looked at which is in panel 2. The EPC is then around 0.6 nm/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thresshold is 25 V.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":537,"height":462}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/Atomic layer etching of AlGaN using Cl2 and Ar gas.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":539,"height":467,"image_format":"jpeg","image_sha256":"3fe566e16ec5132e9c09ea93f7948143d4d9550faf0cc0f6e9524f6f66e0facd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_33_fig_8.jpg","caption":"FIG. 8. Change in N/Ti ratio during an ALE cycle. The atomic concentrations of N and Ti were measured for four TiN films: (1) as-grown with native oxide; (2) before surface modification (after removal of native oxide); (3) after surface modification; (4) after surface modification and IR annealing.","id":"train/atomic-layer-etching/experimental-usecase/33/fig_8","sample_id":"atomic-layer-etching/experimental-usecase/33/fig_8","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the variation of N/Ti ratio across different conditions: 'With native oxide', 'Before mod.', 'After mod.', and 'IR Annealing'.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Process step| N/Ti Ratio | \\n|---|---|\\n| With native oxide| 0.95 | \\n| Before mod. |0.98 | \\n| After mod. |0.75 | \\n| IR Annealing | 1.00 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Oxygen atoms are also bonded to Ti atoms, resulting in less N-Ti bonds so lower N/Ti ratio.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With the modification chlorine is added to the surface, reducing the number of N-Ti bonds at the surface for which the XPS is sensitive.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No the stoichiometry of the bulk does not change as the bulk ratio is 1 and after IR anenealing as wel.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In that case the surface will be oxidized again, meaning a native oxide layer will have formed so a N/Ti ratio of 0.95 will be measured.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":664,"height":508}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/Atomic layer etching of titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":669,"height":511,"image_format":"jpeg","image_sha256":"9c95a4e8eb718a376913e3f790a899dbcac9d685646f3be198aa1e19903f0498","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_38_fig_3.jpg","caption":"FIG. 3. Etch depth as a function of RF power for a fixed Reaction B step time of 5 s, 120 cycles.","id":"train/atomic-layer-etching/experimental-usecase/38/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/38/fig_3","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the relationship between Ar Plasma RF power and depth, indicating an increase in depth with increasing power. The depth plateaus in the region 15-30W, labeled as ALE Window.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ar Plasma RF power (W) | Depth (nm) |\\n|---|---|\\n| 0 | 0 |\\n| 5 | 2 |\\n| 10 | 5 |\\n| 15 | 13 |\\n| 20 | 12 |\\n| 25 | 14 |\\n| 30 | 14 |\\n| 35 | 28 |\\n| 40 | 38 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE window is the range of settings where the etch is self-limited and controllable per cycle. In this plot, it’s about 15–30 W Ar plasma RF power. It’s identified by the plateau where etch depth changes only slightly with increasing power.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3 cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approx. 0.117 nm per cycle (14 nm/120 cycles).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At RF powers below ~15 W and above ~30 W.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":671,"height":408}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/High synergy atomic layer etching of AlGaNGaN.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":675,"height":414,"image_format":"jpeg","image_sha256":"f184de7756193e9e63fee05ee0a637981ab9daef29c9d5c07a6f8b7c08cc89e5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_45_figure_7.jpg","caption":"Figure 7. Etch rates for TiN ALE versus temperature using $\\mathrm{O}_3$ and HF as the reactants.","id":"train/atomic-layer-etching/experimental-usecase/45/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/45/figure_7","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch rate increases with temperature up to 250°C and then plateaus\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature(°C) | Etch Rate (Å/cycle) |\\n|---|---|\\n| 150 | 0.06 |\\n| 200 | 0.14 |\\n| 250 | 0.21 |\\n| 300 | 0.20 |\\n| 350 | 0.21 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 250 C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The paper suggests that the oxidation step forms a similar thickness TiO2 layer over this temperature range, and the HF step removes only that oxidized layer. Because the amount removed per cycle is limited by how much oxide is formed in the oxidation step, the etch rate can stabilize even as temperature increases. This behavior is described as analogous to an ALD window.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, from about 250 C to 350 C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They represent the uncertainty or variation in the measured etch rate at each temperature.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":668,"height":528}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/Thermal Atomic Layer Etching of Titanium Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":672,"height":533,"image_format":"jpeg","image_sha256":"612e3ea4199485b2d5540a7fa710c1a315d87b70312cbd7cdf9e115bb70255f7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_14.jpg","caption":"Figure 14. Saturation study of $\\mathrm{WF_6 / BCl_3}$ ALE process at $170^{\\circ}\\mathrm{C}$ using QCM: (a) $1\\mathrm{WF_6}$ dose of $0.2\\mathrm{s}$ per $10\\mathrm{BCl_3}$ doses of $0.2\\mathrm{s}$ each and (b) $10\\mathrm{WF_6}$ doses of $0.1\\mathrm{s}$ each per $1\\mathrm{BCl_3}$ dose of $1.0\\mathrm{s}$ .","id":"train/atomic-layer-etching/experimental-usecase/46/figure_14","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_14","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"QCM data demonstrating BCl₃ saturation behavior. After an initial WF₆ pulse causes fluorination and mass gain, the first few BCl₃ pulses induce a sharp mass loss. Subsequent BCl₃ pulses produce negligible change, confirming that the etching reaction is self-limiting once the fluorinated surface layer is consumed.\"},{\"panel_id\":\"b\",\"text\":\"QCM data demonstrating WF₆ saturation behavior. The first WF₆ pulse results in a large mass increase due to surface fluorination, while additional WF₆ pulses contribute minimal mass change, confirming that fluorination is also self-limiting and does not proceed indefinitely.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass loading (ng cm⁻²) | Process condition |\\n|----------|------------------------|-------------------------|\\n| 0 | 0 | Initial state |\\n| 50 | 160 | WF₆ pulse |\\n| 100 | 60 | 10× BCl₃ |\\n| 300 | 40 | 10× BCl₃ |\\n| 500 | 30 | 10× BCl₃ |\\n| 550 | 80 | WF₆ pulse |\\n| 600 | 20 | 10× BCl₃ |\\n| 800 | 0 | 10× BCl₃ |\\n| 1000 | −20 | 10× BCl₃ |\\n| 1050 | 60 | WF₆ pulse |\\n| 1100 | −10 | 10× BCl₃ |\\n| 1300 | −40 | 10× BCl₃ |\\n| 1500 | −60 | 10× BCl₃ |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Mass loading (ng cm⁻²) | Process condition |\\n|----------|------------------------|------------------|\\n| 0 | 0 | Initial state |\\n| 100 | 150 | 10× WF₆ |\\n| 300 | 220 | 10× WF₆ |\\n| 500 | 260 | 10× WF₆ |\\n| 550 | 50 | BCl₃ |\\n| 700 | 80 | 10× WF₆ |\\n| 900 | 70 | 10× WF₆ |\\n| 1000 | −120 | BCl₃ |\\n| 1150 | −80 | 10× WF₆ |\\n| 1350 | −100 | 10× WF₆ |\\n| 1500 | −280 | BCl₃ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Diminishing Removal. No, the 10th pulse removes almost nothing. The first BCl₃ pulse causes a massive drop, the second is smaller, and by the 5th–10th pulse, the mass signal is essentially flat, indicating the reactant has run out of surface fluorides to react with.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The strategy in b is likely more efficient for maximizing etch rate. Multiple short WF₆ doses ensure complete fluorination of the surface without excessive precursor waste, while a single, sufficiently long BCl₃ dose guarantees complete removal of the modified layer. The method in 'a' may waste BCl₃ with many short, possibly incomplete doses.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Saturation proves both half-reactions are self-limiting. The WF₆ dose saturates once all available surface sites are fluorinated, forming a TiFₓ-WOₓFᵧ layer. The BCl₃ dose saturates once it completely converts/removes this modified layer to volatile products (e.g., TiCl₄). Further dosing beyond the saturation point yields no additional etch, confirming layer-by-layer control.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Clear saturation implies a robust process window. As long as dose times exceed the saturation point, minor fluctuations in precursor flow or timing will not affect the etch rate per cycle. This insensitivity is critical for high-volume manufacturing, ensuring reproducible etch depth and uniformity across the wafer and from run to run.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":475,"height":381},{"panel_id":"b","x":484,"y":5,"width":466,"height":376}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":950,"height":383,"image_format":"jpeg","image_sha256":"70bfe98a5138302a5e77ecd9c986e22679b63efce3eb3f7d4049bae6fff5d093","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_24_fig_4.jpg","caption":"Fig. 4. Influence of reactant exposure time and temperature on the sample mass changes during thermal ALE $\\mathrm{Al}_2\\mathrm{O}_3$ films using TMA and HF. (I): effect of TMA (a) and HF (b) exposure time on mass changes ( $\\Delta \\mathrm{M}_{\\mathrm{TMA}}$ and $\\Delta \\mathrm{M}_{\\mathrm{HF}}$ ) at $300^{\\circ}\\mathrm{C}$ , respectively; (II): effect of temperature on $\\Delta \\mathrm{M}_{\\mathrm{TMA}}$ and $\\Delta \\mathrm{M}_{\\mathrm{HF}}$ of TMA, HF half-reaction (a) and mass change per ALE cycle (MCPC). Reproduced from Ref. [28].","id":"train/atomic-layer-etching/simulation-usecase/24/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/24/fig_4","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"line chart"},{"panel_id":"d","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A line chart showing the change in ΔMTMA with increasing TMA exposure time at 300°C.\"},{\"panel_id\":\"b\",\"text\":\"A multiple line chart showing the change ΔMTMA, and ΔMHF as a function of the exposure time.\"},{\"panel_id\":\"c\",\"text\":\"A line chart showing the change in ΔMHF with increasing HF exposure time at 300°C.\"},{\"panel_id\":\"d\",\"text\":\"A line chart showing the change in MCPC as a function of the temperature, between 250 and 325 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TMA Exposure Time (s) | ΔMTMA (ng/cm2 cycle)) |\\n| --- | --- |\\n| 0.0 | 0 |\\n| 1.0 | -20 |\\n| 2.0 | -30 |\\n| 3.0 | - |\"},{\"panel_id\":\"b\",\"text\":\"| Exposure time | ΔM HF | ΔM TMA |\\n| --- | --- | --- |\\n| - | 5 | -10 |\\n| - | 10 | -20 |\\n| - | 18 | -30 |\\n| | 20 | -40 |\"},{\"panel_id\":\"c\",\"text\":\"| HF Exposure Time (s) | ΔMHF (ng/cm2 cycle)) |\\n| --- | --- |\\n| 0.0 | 0 |\\n| 0.5 | 12 |\\n| 1.0 | 14 |\\n| 1.5 | 15 |\\n| 2.0 | - |\"},{\"panel_id\":\"d\",\"text\":\"| Temperature (°C) | MCPC (ng/cm2 cycle)) |\\n| --- | --- |\\n| 250 | 0 |\\n| 275 | -10 |\\n| 300 | -18 |\\n| 325 | -20 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The lower temperature, i.e. 250 °C\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the temperature increases, the amount of mass that changes per cycle decreases, slowing the ALE cycle down.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the subfigure, the mass change increases with the exposure time for HF, but decreases for TMA.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mass changes of the samples, in this case for HF, are shown as a function of the HF exposure time (s).\"}]}]","bbox":[{"panel_id":"c","x":7,"y":285,"width":501,"height":292},{"panel_id":"b","x":532,"y":8,"width":469,"height":249},{"panel_id":"a","x":1,"y":5,"width":510,"height":274},{"panel_id":"d","x":536,"y":256,"width":467,"height":329}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/Review Paper -- Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":1003,"height":625,"image_format":"jpeg","image_sha256":"fe375e9ee1fe47e45d4b42ba3fedcfd6c1755a377163739fe4d22aefbb130e97","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_c7be3f3d0a3f5b7cce1c5f6182cb538c5a79b547f531c40a02988e69d6a039b3.jpg","caption":"","id":"train/atomic-layer-etching/simulation-usecase/33/c7be3f3d0a3f5b7cce1c5f6182cb538c5a79b547f531c40a02988e69d6a039b3","sample_id":"atomic-layer-etching/simulation-usecase/33/c7be3f3d0a3f5b7cce1c5f6182cb538c5a79b547f531c40a02988e69d6a039b3","subset":"line-chart","split":"train","classification":[{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"b\",\"text\":\"The chart illustrates how the etching yield of silicon nitride (Si₃N₄) during HF exposure varies with the angle of incidence (θₐₙ) of incoming particles. The yield remains nearly constant around 0.06 between 0° and 30°, then slightly increases to a peak of 0.07 at 45°. Beyond this angle, the etching yield decreases markedly, reaching approximately 0.03 at 75°. This trend indicates that normal to moderately angled incidence promotes optimal etching, while highly oblique angles reduce etching efficiency, likely due to reduced energy transfer or surface access.\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"| θin (deg) | Etching yield (Si3N4/HF) |\\n|---|---|\\n| 0 | 0.06 |\\n| 15 | 0.06 |\\n| 30 | 0.06 |\\n| 45 | 0.07 |\\n| 60 | 0.05 |\\n| 75 | 0.03 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etching yield remains relatively stable between 0° and 30°, with values around 0.06. At 45°, the yield slightly increases to 0.07, suggesting enhanced surface interaction at this moderate angle. However, beyond 45°, the etching yield decreases significantly, dropping to 0.03 at 75°. This implies that more oblique angles reduce the effectiveness of etching, likely due to lower surface impact or inefficient energy transfer from incident particles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"45 degrees.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Maximum etching efficiency occurs near 45°, Minimal change is seen from 0° to 30° , Avoid high angles (≥ 60°), reactor design should consider angular effects.\"}]}]","bbox":[{"panel_id":"b","x":0,"y":0,"width":333,"height":286}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/c7be3f3d0a3f5b7cce1c5f6182cb538c5a79b547f531c40a02988e69d6a039b3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/c7be3f3d0a3f5b7cce1c5f6182cb538c5a79b547f531c40a02988e69d6a039b3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"b","first_classification_label":"line chart","caption_source":"not_found"},"width":333,"height":286,"image_format":"jpeg","image_sha256":"53bebf21667e446775f46c389de786e01c5462111aa757ae5632c766787960ce","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_figure_9.jpg","caption":"Figure 9. (a) The reflection coefficient, and (b) the total etching yield per incident HF molecule, both as a function of the incident angle. The error bars indicate the standard deviations among three independent runs.","id":"train/atomic-layer-etching/simulation-usecase/33/figure_9","sample_id":"atomic-layer-etching/simulation-usecase/33/figure_9","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents the variation of reflection coefficient as a function of incident angle (θin) from 0° to 75°. From 0° to 45°, the reflection coefficient remains relatively constant at around 0.1, indicating minimal reflection changes over low to moderate angles. At 60°, the coefficient begins to rise, and at 75°, it increases sharply to approximately 0.45. This indicates that higher incident angles lead to significantly more surface reflection, a behavior that may influence energy input or beam penetration in angle-sensitive surface processes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| θin (deg) | Reflection coefficient |\\n|---|---|\\n| 0 | 0.1 |\\n| 15 | 0.1 |\\n| 30 | 0.1 |\\n| 45 | 0.1 |\\n| 60 | 0.2 |\\n| 75 | 0.45 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reflection coefficient remains relatively stable at around 0.1 between 0° and 45°, suggesting minimal angle dependence in that range. However, beyond 60°, the coefficient increases substantially, reaching approximately 0.45 at 75°. This trend indicates that reflection becomes significantly more pronounced at high angles of incidence, which could affect energy deposition or reaction efficiency in angle-sensitive processes.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 60 degrees\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Minimise angles above 60° , Maintain angles between 0° and 45° , Adjust beam alignment in plasma\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":323,"height":286}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":323,"height":286,"image_format":"jpeg","image_sha256":"411cc1668e980299573a3af45fa293f2c40a3055fbfdd594fa288d32a7cf45a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_35_FIG5.jpg","caption":"Figure 5. (a-d) Snapshots representing the $\\mathrm{H}_2\\mathrm{O}$ formation mechanism obtained in optimization of the $\\mathrm{O}_5$ configuration, as shown in Figure 3 (the color code is the same). The left panel shows a complementary graph with relative energy along the formation pathway with respect to the initial geometry (desorbed oxygen atoms).","id":"train/atomic-layer-etching/simulation-usecase/35/FIG5","sample_id":"atomic-layer-etching/simulation-usecase/35/FIG5","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":152,"width":615,"height":470},{"panel_id":"b","x":679,"y":8,"width":306,"height":204},{"panel_id":"c","x":680,"y":216,"width":312,"height":204},{"panel_id":"d","x":680,"y":428,"width":312,"height":201},{"panel_id":"e","x":680,"y":639,"width":285,"height":184}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/Density Functional Theory Study of Oxygen Adsorption on Polymer Surfaces for Atomic-Layer.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":998,"height":828,"image_format":"jpeg","image_sha256":"de5811f88545d56a9c69af1f64770cbae23484b972b1b4d2282531eed633a3b5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_4_figure_1.jpg","caption":"Figure 1. Etch per cycle for TiN films versus $\\mathrm{NbF}_5$ pulse time at $460^{\\circ}C$ The duration of $\\mathbb{N}_2$ purges and $\\mathrm{CCl}_4$ pulses were fixed at 6 and 1 s, respectively.","id":"train/atomic-layer-etching/simulation-usecase/4/figure_1","sample_id":"atomic-layer-etching/simulation-usecase/4/figure_1","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates how the etch per cycle of TiN films varies with NbF₅ pulse time during the NbF₅–CCl₄ etch process at 460 °C. The etch per cycle increases from about 0.3 Å without NbF₅ to approximately 0.8 Å at a 3 s NbF₅ pulse, showing a gradual increase without clear saturation under the applied conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| NbF₅ pulse time [s] | Etch per cycle [Å] |\\n|---|---|\\n| 0.0 | 0.3 |\\n| 1.0 | 0.6 |\\n| 3.0 | 0.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch per cycle increases with increasing NbF₅ pulse time. When no NbF₅ is used, the etch per cycle is about 0.3 Å, indicating that CCl₄ alone can etch TiN. As the NbF₅ pulse time increases to 1 s, the etch per cycle rises to approximately 0.6 Å, and further increases to about 0.8 Å at a 3 s pulse time. The trend shows a gradual increase without clear saturation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Partially self-limiting surface reactions, Insufficient purge time, Low volatility or slow removal of reaction products, Presence of residual CCl₄ vapors in the etch system, Slow diffusion of fluorine species through TiN grain boundaries\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 0.6 Å.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":1,"width":623,"height":569}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/Combining Experimental and DFT Investigation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":633,"height":575,"image_format":"jpeg","image_sha256":"9ddaf759394920b5a45161c754403177fba77daf46ec5daa2f58239c413b30e7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_9_1efb120580ad0809db6986794a53a1e9c383b07153d625e10037bb0738d83671.jpg","caption":"Fig. A1. Convergce tests for atomic layr nmber and cutoff energies for DFT calculations. (a) Variation of adsorption energy of chlorine with layer number, cutoff energies of $50 / 200\\mathrm{Ry}$ were applied. (b) Variation of total system energy with cutoff energies for wave function and electron density, the cutoff energy for electron density was set to be 4 times that for wave function, as a default setting in Quantum Espresso.","id":"train/atomic-layer-etching/simulation-usecase/9/1efb120580ad0809db6986794a53a1e9c383b07153d625e10037bb0738d83671","sample_id":"atomic-layer-etching/simulation-usecase/9/1efb120580ad0809db6986794a53a1e9c383b07153d625e10037bb0738d83671","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between layer number and adsorption energy, with a decreasing trend, indicating that for a certain structure adsorption is more likely.\"},{\"panel_id\":\"b\",\"text\":\"The line chart illustrates the decrease in total energy with increasing cut-off energies.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Layer number | Adsorption Energy (eV) |\\n|---|---|\\n| 4 | 4.2 |\\n| 6 | 4.13 |\\n| 8 | 4.12 |\\n| 10 | 4.12 |\\n| 12 | 4.12 |\"},{\"panel_id\":\"b\",\"text\":\"| Cut-off energies (Ry) | Total energy (Ry) |\\n|---|---|\\n| 15 | -945.9 |\\n| 20 | -946.1 |\\n| 25 | -946.2 |\\n| 30 | -946.3 |\\n| 35 | -946.3 |\\n| 40 | -946.3 |\\n| 45 | -946.3 |\\n| 50 | -946.3 |\\n| 55 | -946.3 |\\n| 60 | -946.35 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Energy in Ry (Rydberg) is a fundamental unit in atomic physics, representing the ionization energy of a hydrogen atom from its ground state, approximately 13.6 electron volts (eV).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50 Ry\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that from a certain thickness onwards, the substrate has no repelling influence on adsorption anymore.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Layer number 8.\"}]}]","bbox":[{"panel_id":"b","x":7,"y":455,"width":654,"height":391},{"panel_id":"a","x":9,"y":11,"width":654,"height":400}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/1efb120580ad0809db6986794a53a1e9c383b07153d625e10037bb0738d83671.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/1efb120580ad0809db6986794a53a1e9c383b07153d625e10037bb0738d83671.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/Mechanism of photoassisted atomic layer etching of chlorinated Si(111) surfaces Insight.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":667,"height":850,"image_format":"jpeg","image_sha256":"114e6d0e178f8c65967445067b4339a644ab0c8b3d44a4e188b6f0b4da1539ec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_9_42b2341dcb88232a2b3d8fc38fe7c5cbc5345d5e59715edb80a39db016f6f34c.jpg","caption":"Fig. A2. Variation of the lowest excitation energy with the number of Si atoms of the cluster, insets are the molecular structures of the associated clusters.","id":"train/atomic-layer-etching/simulation-usecase/9/42b2341dcb88232a2b3d8fc38fe7c5cbc5345d5e59715edb80a39db016f6f34c","sample_id":"atomic-layer-etching/simulation-usecase/9/42b2341dcb88232a2b3d8fc38fe7c5cbc5345d5e59715edb80a39db016f6f34c","subset":"line-chart","split":"train","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The excitation energy of a system decreases as the number of silicon (Si) atoms increases, this is a stepwise relation as a function of the number of Si atoms.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Si atoms | Excitation energy (eV) |\\n|---|---|\\n| 0 | - |\\n| 3 | 4.1 |\\n| 7 | 3.7 |\\n| 11 | 3.6 |\\n| 15 | 3.2 |\\n| 24 | 3.2 |\\n| 34 | 3.1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"n=34 as actual substrates used in experimental data are composed of way more atoms than depicted in this graph.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Big substrates in simulations require way more computing power than substrates with little number of atoms.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A reason could be the effect that more connected silicon atoms shift energy levels in adsorbed species to lower energies.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No this is unlikely, except for the case where the delta time is reduced to an extremely low value\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":662,"height":433}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/42b2341dcb88232a2b3d8fc38fe7c5cbc5345d5e59715edb80a39db016f6f34c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/42b2341dcb88232a2b3d8fc38fe7c5cbc5345d5e59715edb80a39db016f6f34c.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/Mechanism of photoassisted atomic layer etching of chlorinated Si(111) surfaces Insight.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":667,"height":436,"image_format":"jpeg","image_sha256":"0a3fe8f79a8e85544bb89ae30de61dd6b8698e506f7cbfb3b842802f19958580","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/line-chart/validation/metadata.jsonl b/subsets/line-chart/validation/metadata.jsonl index 0f8659303f537eb51612b5f6240d0a22efeabeb5..f06f2165594c7cb023b4c402288c1394049137bb 100644 --- a/subsets/line-chart/validation/metadata.jsonl +++ b/subsets/line-chart/validation/metadata.jsonl @@ -1,15 +1,15 @@ -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig_9.jpg","caption":"FIG. 9. (Color online) Calculation method of band-gap energy by the linear fit of the relative absorption edge.","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig_9","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig_9","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":469,"height":367,"image_format":"jpeg","image_sha256":"71c2203ac87ddf461e5da48fda934b41683e37187141928d6e76e2d8618f26c6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":466,"height":367}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The graph repesents the Tauc plot, calculation method of band-gap energy by the linear fit of the relative absorption edge. The linear fit line meets the x axis at the band gap value. the y axis in this curve represents the relative absorption coefficient.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Photon energy (eV) | [(-ln T)(hν)]² (a.u.) |\\n|--------------------|-----------------------|\\n| 3.0 | 0.00 |\\n| 3.5 | 0.00 |\\n| 4.0 | 0.00 |\\n| 4.5 | 0.00 |\\n| 4.7 | 0.01 |\\n| 4.8 | 0.05 |\\n| 4.9 | 0.20 |\\n| 5.0 | 0.60 |\\n| 5.1 | 1.20 |\\n| 5.2 | 2.00 |\\n| 5.3 | 3.20 |\\n| 5.4 | 4.60 |\\n| 5.5 | 6.20 |\\n| 5.6 | 8.00 |\\n| 5.7 | 10.00 |\\n| 5.8 | 12.20 |\\n| 5.9 | 14.60 |\\n| 6.0 | 17.00 |\\n| 6.1 | 19.50 |\\n| 6.2 | 22.00 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Measure the transmittance T spectrum as a function of wavelength λ.\\n\\nConvert wavelength to photon energy using hν=1240/𝜆\\t (with λ in nm and energy in eV).\\n\\nCompute an absorption coefficient proxy such as −ln(𝑇)−ln(T) or 𝛼α.\\n\\nApply the Tauc transformation by calculating [−ln(T)⋅hν]^2.\\n\\nPlot the transformed quantity against the photon energy to determine the optical band gap.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"AES with High-Energy Ions: Pro: Faster sputtering. Con: Can cause more atomic mixing and roughening, distorting depth resolution.\\n\\nXPS with Low-Energy Ions: Pro: Better depth resolution and more accurate quantification of light elements due to gentler sputtering.\\n\\nFor accurate light-element quantification with minimal distortion, XPS with low-energy ions is preferable. The trade-off is slower data acquisition, but it preserves interfacial sharpness for more reliable profiling.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The flat Ga and O profiles indicate excellent compositional uniformity throughout the film's bulk. For a dielectric application, this uniformity is crucial as it suggests a consistent bandgap and defect density with depth, which should lead to a high and predictable breakdown voltage, as electric fields would be evenly distributed without weak points from stoichiometric variations.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No.\\n\\nWhile the sharp interface and low bulk carbon are positive, the as-deposited film likely has a high density of point defects and disorder. These defects would act as charge traps, leading to poor channel mobility and unstable threshold voltage in a HEMT. Post-deposition annealing is typically required to reduce these defects and improve dielectric quality.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_58_fig5.jpg","caption":"FIG.5.XRD $\\Phi$ scan of $20 \\mathrm{nm}$ Ti/20 nm PE-ALD $\\mathrm{Co / Si(001)}$ annealed at $800^{\\circ}\\mathrm{C}$ The capping layer and remaining Co film were selectively etched before analysis.","id":"validation/atomic-layer-deposition/experimental-usecase/58/fig5","sample_id":"atomic-layer-deposition/experimental-usecase/58/fig5","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/Lee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":602,"height":470,"image_format":"jpeg","image_sha256":"6feadc04709cb591a26d82f824497e5095d8b38f0a60166b5ffe63220b422d47","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":599,"height":467}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart displays intensity values against angles measured in degrees for an XRD measurement.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| φ (degree) | Intensity (a.u.) |\\n|---|---|\\n|-180|0 |\\n|-135|1|\\n|-90|0 |\\n|-45|1|\\n|0|0 |\\n|45|1|\\n|90|0 |\\n|135|1|\\n|180| 0|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"angular symmetry. Possitive and negative angles give the same intensity\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cristallinity\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Zero\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"From -180 to 180 degrees. Any more would not result in different data as the angles will have radial symmetry\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_13_fig4.jpg","caption":"Fig.4 PBE-D3 level minimum energy paths corresponding to the different reaction pathways (a, b) for $\\mathrm{MeCpPtMe}_3$ and (c) $\\mathrm{Pt(acac)_2}$ binding on pristine graphene. First and last points on the reaction coordinate correspond to the physisorbed and chemisorbed species, respectively. Physisorbed species of (a, b) and (c) are $-0.56$ and $-1.15\\mathrm{eV}$ with respect to the separated species (pristine graphene and $\\mathrm{MeCpPtMe}_3$ or $\\mathrm{Pt(acac)_2}$","id":"validation/atomic-layer-deposition/simulation-usecase/13/fig4","sample_id":"atomic-layer-deposition/simulation-usecase/13/fig4","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/Bora Karasulu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":641,"height":1489,"image_format":"jpeg","image_sha256":"2198a0370f8f99e568f62469d515d5a8f5382a81029b42fa2c4893876e26b848","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":2,"width":631,"height":504},{"panel_id":"b","x":8,"y":503,"width":634,"height":501},{"panel_id":"c","x":0,"y":998,"width":634,"height":488}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Minimum energy pathway for MeCpPtMe₃ binding on pristine graphene, showing the transition from a physisorbed state to a chemisorbed state with a high activation barrier and an overall endothermic reaction.\"},{\"panel_id\":\"b\",\"text\":\"Alternative reaction pathway for MeCpPtMe₃ on pristine graphene, showing a large kinetic barrier that limits chemisorption, explaining poor ALD nucleation on defect-free graphene.\"},{\"panel_id\":\"c\",\"text\":\"Minimum energy pathway for Pt(acac)₂ on pristine graphene, showing a strongly stabilized physisorbed state and a very high activation barrier, making chemisorption both thermodynamically and kinetically unfavorable.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction coordinate | Relative energy (eV) |\\n|---|---|\\n| Physisorbed state | −0.56 |\\n| Transition region | 0.40 |\\n| Activation barrier | 0.96 |\\n| Chemisorbed state | 0.36 |\"},{\"panel_id\":\"b\",\"text\":\"| Reaction coordinate | Relative energy (eV) |\\n|---|---|\\n| Physisorbed state | −0.56 |\\n| Transition region | 0.75 |\\n| Activation barrier | 1.38 |\\n| Chemisorbed state | 0.63 |\"},{\"panel_id\":\"c\",\"text\":\"| Reaction coordinate | Relative energy (eV) |\\n|---|---|\\n| Physisorbed state | −1.15 |\\n| Rising energy region | 1.50 |\\n| Activation barrier (chemisorption) | 4.14 |\\n| Chemisorbed state | 3.80 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The calculated minimum energy paths show high activation barriers, making the chemisorption process kinetically unfavorable.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Pt(acac)₂ shows the more stable physisorbed state, with a physisorption energy of −1.15 eV.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The energy profiles indicate that pristine graphene is a poor substrate for Pt ALD with both MeCpPtMe₃ and Pt(acac)₂. High kinetic barriers limit the formation of chemisorbed species, while strong physisorption and low reverse barriers favor desorption. As a result, only trace amounts of Pt are expected to nucleate, explaining the experimentally observed low ALD efficiency on defect-free graphene.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"High activation barriers for chemisorption reactions, Endothermic reaction energies for precursor conversion, Strong stabilization of physisorbed precursor species, Easy backward reactions that favor desorption over binding\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_13_fig8.jpg","caption":"Fig.8 PBE-D3 level minimum energy paths corresponding to the different reaction pathways for $\\mathrm{MeCpPtMe}_3$ binding on (a) epoxydated and (b) hydroxylated graphene oxide. First and last points on the reaction coordinate correspond to the physisorbed and chemisorbed species, respectively. Physisorbed species of (a) and (b) are $-1.55\\mathrm{eV}$ and $-0.46\\mathrm{eV}$ with respect to the separated species $(\\mathrm{MeCpPtMe}_3$ and GO-epoxy or GO-hydroxy). Activation energy for (b) is computed with respect to the lowest-energy minimum along the pathway (around $7\\dot{A}$ -","id":"validation/atomic-layer-deposition/simulation-usecase/13/fig8","sample_id":"atomic-layer-deposition/simulation-usecase/13/fig8","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/Bora Karasulu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":659,"height":1078,"image_format":"jpeg","image_sha256":"3e3e50c2539585ba114c102a04bf29bb8c5b3efa474810a687dc0e9d65f89698","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":4,"width":652,"height":516},{"panel_id":"b","x":12,"y":538,"width":650,"height":539}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Minimum-energy pathway for MeCpPtMe₃ binding on epoxydated graphene oxide, showing energy decrease from physisorbed to chemisorbed states. Adsorption is thermodynamically favorable and kinetically feasible, with a low activation barrier. Chemisorption is slightly stronger compared to hydroxylated GO.\"},{\"panel_id\":\"b\",\"text\":\"Minimum-energy pathway for MeCpPtMe₃ binding on hydroxylated graphene oxide, showing energy decrease from physisorbed to chemisorbed states. Adsorption is thermodynamically favorable and kinetically feasible, with low activation barriers, though slightly weaker than on epoxydated GO.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Coordinate [Å] | Energy [eV] |\\n|---|---|\\n| 0 | 0.0 |\\n| 5 | -1.0 |\\n| 7 | -2.31 |\\n| 10 | -3.00 |\\n| 15 | -4.24 |\"},{\"panel_id\":\"b\",\"text\":\"| Reaction Coordinate [Å] | Energy [eV] |\\n|---|---|\\n| 0 | 0.0 |\\n| 5 | -0.8 |\\n| 7 | -2.00 |\\n| 10 | -2.75 |\\n| 15 | -3.50 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The computed paths show an energetically downhill transition from physisorbed to chemisorbed states.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Epoxydated graphene oxide exhibits slightly stronger chemisorption (−4.24 eV) than hydroxylated graphene oxide (−3.50 eV).\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Graphene oxide provides thermodynamically favorable and kinetically accessible sites for MeCpPtMe3 chemisorption due to its surface oxygen functionalities. The low activation barriers and highly exothermic reaction pathways, regardless of whether the GO is epoxydated, hydroxylated, or a mixture, allow for stable Pt adsorption. Uniform functionalization further ensures continuous and controllable Pt loading, making GO a promising substrate for ALD applications.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Type of oxygen functionality (epoxy vs hydroxyl), Distribution of oxygen groups (uniform vs mixed), Single-sided versus double-sided functionalization, Planarity and structural order of the GO layer\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_13_fig9.jpg","caption":"Fig.9 PBE-D3 level minimum energy paths corresponding to the different reaction pathways for $\\mathsf{Pt(acac)}_2$ binding on (a) epoxydated and (b) hydroxylated graphene oxide. First and last points on the reaction coordinate correspond to the physisorbed and chemisorbed species, respectively. Physisorbed species of (a) and (b) are $-1.96\\in V$ and $-0.86$ eV with respect to the separated species $(\\mathsf{Pt}(\\mathsf{acac})_2$ and GO-epoxy or GO-hydroxyl).","id":"validation/atomic-layer-deposition/simulation-usecase/13/fig9","sample_id":"atomic-layer-deposition/simulation-usecase/13/fig9","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/Bora Karasulu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":639,"height":1019,"image_format":"jpeg","image_sha256":"784f4e3fa55a836a8f58c090f433c3d322f0e3e1d9e7222213e010176e8c3561","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":632,"height":517},{"panel_id":"b","x":2,"y":519,"width":632,"height":495}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Minimum-energy pathway for Pt(acac)₂ binding on epoxydated graphene oxide, showing transition from physisorbed to chemisorbed species. The physisorption energy is −1.96 eV relative to the separated species, and the energy profile illustrates the reaction progression along the surface-specific reaction coordinate.\"},{\"panel_id\":\"b\",\"text\":\"Minimum-energy pathway for Pt(acac)₂ binding on hydroxylated graphene oxide, showing transition from physisorbed to chemisorbed species. The physisorption energy is −0.86 eV relative to the separated species, with the energy profile reflecting the reaction pathway along the hydroxylated surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Coordinate [Å] | Energy [eV] |\\n|---|---|\\n| 0 | 0.0 |\\n| 2 | -0.8 |\\n| 4 | -1.2 |\\n| 6 | -1.5 |\\n| 8 | -1.8 |\\n| 10 | -1.96 |\\n| 12 | -0.48 |\"},{\"panel_id\":\"b\",\"text\":\"| Reaction Coordinate [Å] | Energy [eV] |\\n|---|---|\\n| 0 | 0.0 |\\n| 2 | -0.4 |\\n| 4 | -0.6 |\\n| 6 | -0.8 |\\n| 8 | -0.86 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The minimum-energy paths show that the precursor first physisorbs on the surface before transitioning to the chemisorbed state.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The physisorption energy is −1.96 eV for epoxydated GO and −0.86 eV for hydroxylated GO, indicating stronger initial adsorption on epoxydated surfaces.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The energy profiles indicate that Pt(acac)₂ chemisorption is significantly hindered on both epoxydated and hydroxylated GO. High barriers and the formation of stable intermediates, particularly on hydroxylated GO, make the process energetically less favorable. Consequently, Pt(acac)₂ is not ideal for practical Pt nucleation or ALD on graphene oxide surfaces.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Epoxydated GO: stronger physisorption (−1.96 eV), larger energy drop along the path, Hydroxylated GO: weaker physisorption (−0.86 eV), smaller energy drop, Both types influence the relative stabilization of chemisorbed products and the overall reaction energy\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_4_figure_6.jpg","caption":"Figure 6. DFT (GGA/PBE-D3) level minimum energy paths for the Hacac adsorption on (a) $\\mathrm{Al}_2\\mathrm{O}_3$ and (b) $\\mathrm{SiO}_2$ surfaces, as described by the corresponding chemical equations. Minimum energy structures of the important steps are also shown (yellow, green, and blue dots and corresponding insets), where some oxygen and hydrogen atoms are hidden for clarity. First points of the energy profiles correspond to the Hacac species physisorbed on each surface and have $\\Delta E_{\\mathrm{p}} = -0.75$ and $-0.37 \\mathrm{eV}$ with respect to the separated Hacac gas phase and $\\mathrm{Al}_2\\mathrm{O}_3 / \\mathrm{SiO}_2$ surfaces. These are taken as reference points $(0 \\mathrm{eV})$ to calculate the activation and final-state energies. Color code for atoms: silicon, pink; aluminum, light gray; hydrogen, white; oxygen, red; carbon, gray.","id":"validation/atomic-layer-deposition/simulation-usecase/4/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/4/figure_6","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":1155,"height":577,"image_format":"jpeg","image_sha256":"f989849d37fb1522082f88e6d755e8b7746c7b0e0cbfbd38ba09115dc07f52d9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":28,"width":530,"height":549},{"panel_id":"b","x":619,"y":20,"width":536,"height":557}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The diagram represent the Density Functional Theory (DFT)-calculated reaction energy values comparing the chemisorption of Hacac on Al₂O₃ surface. The diagrams show the activation energy (Eₐ) and reaction energy (ΔE) for the ligand-exchange reaction where Hacac replaces a surface hydroxyl group.\"},{\"panel_id\":\"b\",\"text\":\"The diagram represent the Density Functional Theory (DFT)-calculated reaction energy values comparing the chemisorption of Hacac on SiO₂surfaces. The diagrams show the activation energy (Eₐ) and reaction energy (ΔE) for the ligand-exchange reaction where Hacac replaces a surface hydroxyl group. The key difference is that the reaction is exothermic and low-barrier on Al₂O₃ (ΔE = -0.49 eV, Eₐ = 0.01/0.25 eV) but endothermic and high-barrier on SiO₂ (ΔE = +0.98 eV, Eₐ = 2.35 eV).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction step | Energy (eV) |\\n| ------ | ------- |\\n| Physisorbed state | 0.05 |\\n| Transition State | 0.25 |\\n| Chemisorbed Product State | -0.49 |\"},{\"panel_id\":\"b\",\"text\":\"| Reaction step | Energy (eV) |\\n| ------ | ------- |\\n| Physisorbed state | 0.05 |\\n| Transition State | 2.25 |\\n| Chemisorbed Product State | 0.98 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It implies the Al–O(acac) bond is significantly stronger than the Si–O(acac) bond relative to their respective starting surface OH bonds.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It suggests performing DFT calculations of the inhibitor's adsorption reaction energy (ΔE) and activation energy (Eₐ) on both target and non-target surfaces. A successful selective process will likely require a large thermodynamic and kinetic preference (exothermic/low-barrier on target, endothermic/high-barrier on non-target) similar to the Al₂O₃/SiO₂ case shown here. This computational screen can rapidly identify promising inhibitor candidates before costly experimentation.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Physisorbed State: Hacac near the surface (0 eV reference).\\n\\nTransition State: Peak at ~0.25 eV (Eₐ).\\n\\nChemisorbed Product State: Al(acac)⁺ + H₂O(g) at -0.49 eV (ΔE).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The very low Eₐ on Al₂O₃ (0.25 eV) means Hacac reacts easily at low temperature, while the much higher Eₐ on SiO₂ (2.35 eV) means it barely reacts at all under the same conditions. This large gap ensures that at typical ALD temperatures (~250–300 °C), Hacac will strongly chemisorb on Al₂O₃ but remain essentially inactive on SiO₂. As a result, the process naturally becomes highly selective without needing extreme temperatures or additional steps.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig_5.jpg","caption":"Fig. 5 Saturation curves at $350^{\\circ}\\mathrm{C}$ for (a) Hhfac pulses using a $25\\mathrm{~s~H}_2$ plasma and (b) $\\mathrm{H}_{2}$ plasma exposure using $15\\times 50\\mathrm{~ms}$ pulses of Hhfac per cycle. The lines are guides to the eye.","id":"validation/atomic-layer-etching/experimental-usecase/10/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/10/fig_5","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":664,"height":683,"image_format":"jpeg","image_sha256":"3691f1296d0cd3a66343d5d5bf860479b74ef4dc10cdfed16260101e20627929","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":664,"height":341},{"panel_id":"b","x":2,"y":349,"width":661,"height":330}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Panel (a) demonstrates a saturating trend in EPC with increasing number of Hhfac pulses, indicating that the surface becomes increasingly modified until further pulses yield no significant additional etching.\"},{\"panel_id\":\"b\",\"text\":\"Panel (b) reveals that EPC also increases with H₂ plasma exposure time, but plateaus earlier, suggesting a time threshold beyond which further plasma exposure does not significantly enhance etching. Together, these panels show that both precursor dose and plasma activation are necessary for etching, but only up to saturation limits where the EPC levels off.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Hhfac pulses | EPC (nm) |\\n|------------------------|----------|\\n| 0 | 0.00 |\\n| 2 | 0.04 |\\n| 4 | 0.07 |\\n| 6 | 0.09 |\\n| 8 | 0.10 |\\n| 10 | 0.12 |\\n| 12 | 0.14 |\\n| 14 | 0.15 |\\n| 16 | 0.16 |\\n| 18 | 0.17 |\\n| 20 | 0.17 |\"},{\"panel_id\":\"b\",\"text\":\"| H₂ plasma exposure time (s) | EPC (nm) |\\n|-----------------------------|----------|\\n| 0 | 0.00 |\\n| 5 | 0.07 |\\n| 10 | 0.10 |\\n| 20 | 0.12 |\\n| 30 | 0.16 |\\n| 60 | 0.15 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hhfac pulses increase EPC to saturation, H₂ plasma time increases EPC then plateaus\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 15 - 20 pulses.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The observed saturation of EPC with respect to both Hhfac pulses and H₂ plasma exposure indicates a self-limiting process characteristic of atomic layer etching. In panel (a), the surface reaches a state where additional precursor does not further modify it, suggesting that all reactive sites have been consumed. In panel (b), the plasma step reaches a threshold where all chemically modified species have been activated or removed, and further exposure has negligible effect. This behavior supports the controlled, layer-by-layer removal fundamental to ALE.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig_6.jpg","caption":"Fig. 6 Thickness evolution as a function of pulses/cycles for (a) only Hhfac dosing, (b) only $\\mathsf{H}_2$ plasma exposure and (c) ALD cycles with Hhfac and $\\mathsf{H}_2$ plasma pulses. Experiments were performed at $350^{\\circ}\\mathrm{C}$ table temperature.","id":"validation/atomic-layer-etching/experimental-usecase/10/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/10/fig_6","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":661,"height":492,"image_format":"jpeg","image_sha256":"de9dcb045e003003c7fd5ba8995b4ca1bf2f1e17cf8b4c908c41ae3bb55f31a6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":264,"height":492},{"panel_id":"b","x":268,"y":2,"width":201,"height":488},{"panel_id":"c","x":474,"y":1,"width":184,"height":492}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Panel (a) shows no change in thickness when only Hhfac is used, even after 20 pulses. Similarly, panel (b) indicates no measurable thickness reduction with H₂ plasma alone. In contrast, panel (c) demonstrates a steady linear decrease in film thickness when both Hhfac and H₂ plasma are applied in combination, highlighting the synergistic effect of this treatment for etching. These results suggest that neither precursor nor plasma alone is sufficient to etch the surface, but their combination results in controlled material removal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of pulses/cycles | Thickness change (nm) |\\n|--------------------------|------------------------|\\n| 0 | 0 |\\n| 5 | 0 |\\n| 10 | 0 |\\n| 15 | 0 |\\n| 20 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of pulses/cycles | Thickness change (nm) |\\n|--------------------------|------------------------|\\n| 0 | 0 |\\n| 5 | 0 |\\n| 10 | 0 |\\n| 15 | 0 |\\n| 20 | 0 |\"},{\"panel_id\":\"c\",\"text\":\"| Number of pulses/cycles | Thickness change (nm) |\\n|--------------------------|------------------------|\\n| 0 | 0 |\\n| 5 | -0.5 |\\n| 10 | -1.0 |\\n| 15 | -1.5 |\\n| 20 | -2.0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"(a): Hhfac, no thickness change, (b): H₂ plasma, no thickness change, (c): Hhfac + H₂ plasma, linear decrease in thickness\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thickness decreases by approx. 2.0 nm after 20 cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In atomic layer etching, precursor adsorption alone often does not result in material removal due to the lack of activation energy. Similarly, plasma exposure alone may not modify the surface sufficiently for etching to occur. The combination of Hhfac and H₂ plasma enables a two-step mechanism where Hhfac modifies the surface chemically, and the H₂ plasma provides energetic species to drive desorption or reaction of surface-bound fragments. This synergy allows for a self-limiting, layer-by-layer etching process, as shown by the controlled thickness decrease in panel (c).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig_7.jpg","caption":"Fig. 7 (a) Etched thickness as a function of ALE cycles using 15 pulses of Hhfac dose/hold and $25\\mathrm{~s~H}_{2}$ plasma each cycle. Experiments were performed at $300^{\\circ}\\mathrm{C}$ table temperature, yielding an EPC of $0.08\\pm 0.01$ nm per cycle. (b) Reflection mode absorbance spectra for $\\mathrm{Al}_2\\mathrm{O}_3$ and $\\mathrm{SiO}_2$ planar films exposed to a $100\\mathrm{~ms}$ Hhfac dose, referenced to their as-deposited surfaces. The Al-O and hfac absorbance regions are highlighted in the figure.","id":"validation/atomic-layer-etching/experimental-usecase/10/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/10/fig_7","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"spectra chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":658,"height":933,"image_format":"jpeg","image_sha256":"b945ac25e4ac5e3072cf74f18da58dbafefed00c70e6079d1e824d7b40c452f6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":652,"height":560},{"panel_id":"b","x":17,"y":559,"width":640,"height":371}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Panel (a) shows that the Al₂O₃ film undergoes a steady decrease in thickness over repeated cycles at 300 °C, with an etch-per-cycle (EPC) of ~0.08 nm. In contrast, the SiO₂ film exhibits negligible thickness change under identical conditions, indicating that the process is selective for Al₂O₃.\"},{\"panel_id\":\"b\",\"text\":\"Panel (b) supports this observation by displaying FTIR spectra with distinct vibrational signatures for Al–O bonds and hfac ligands on the Al₂O₃ sample, while SiO₂ shows minimal spectral activity. Together, the panels demonstrate selective etching of Al₂O₃ and surface chemical verification via absorbance spectroscopy.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycles | Thickness change (nm) – SiO₂ | Thickness change (nm) – Al₂O₃ |\\n|--------|------------------------------|-------------------------------|\\n| 0 | 0.00 | 0.00 |\\n| 5 | 0.00 | -0.40 |\\n| 10 | 0.00 | -0.80 |\\n| 15 | 0.00 | -1.20 |\\n| 20 | 0.00 | -1.60 |\\n| 25 | 0.00 | -2.00 |\\n| 30 | 0.00 | -2.40 |\"},{\"panel_id\":\"b\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance – Al₂O₃ | Absorbance – SiO₂ |\\n|-------------------|---------------------|--------------------|\\n| 4000 | ~0.0001 | ~0.00005 |\\n| 3300 | ~0.0001 | ~0.00005 |\\n| 1650 | Peak (hfac) | — |\\n| 1000 | Strong peak (Al–O) | Low/no peak |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE process selectively etches Al₂O₃ without affecting SiO₂ under the tested conditions. This selectivity is important in applications where material-specific removal is critical, such as semiconductor patterning. The result implies that the chemical reactions involved are highly dependent on the film’s composition, likely due to differences in surface chemistry and bonding environments.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.08 nm per cycle\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Al–O stretching peak at ~1000 cm⁻¹, Hhfac ligand peak at ~1650 cm⁻¹\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_19_fig_4.jpg","caption":"Fig. 4. Influence of reactant exposure time and temperature on the sample mass changes during thermal ALE $\\mathrm{Al}_2\\mathrm{O}_3$ films using TMA and HF. (I): effect of TMA (a) and HF (b) exposure time on mass changes ( $\\Delta \\mathrm{M}_{\\mathrm{TMA}}$ and $\\Delta \\mathrm{M}_{\\mathrm{HF}}$ ) at $300^{\\circ}\\mathrm{C}$ , respectively; (II): effect of temperature on $\\Delta \\mathrm{M}_{\\mathrm{TMA}}$ and $\\Delta \\mathrm{M}_{\\mathrm{HF}}$ of TMA, HF half-reaction (a) and mass change per ALE cycle (MCPC). Reproduced from Ref. [28].","id":"validation/atomic-layer-etching/experimental-usecase/19/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/19/fig_4","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":1003,"height":625,"image_format":"jpeg","image_sha256":"fe375e9ee1fe47e45d4b42ba3fedcfd6c1755a377163739fe4d22aefbb130e97","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":4,"width":524,"height":273},{"panel_id":"b","x":6,"y":284,"width":505,"height":298},{"panel_id":"c","x":517,"y":0,"width":478,"height":254},{"panel_id":"d","x":519,"y":253,"width":484,"height":317}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Shows mass change (ΔM_TMA) during the TMA half reaction versus TMA exposure time at 300°C. The curve approaches saturation around −29 ng/cm² after ~2 s, demonstrating self limiting ligand exchange behavior.\"},{\"panel_id\":\"b\",\"text\":\"Shows mass change (ΔM_HF) during the HF half reaction versus HF exposure time at 300°C. The curve saturates at ~13 ng/cm² after ~1 s, confirming self limiting fluorination.\"},{\"panel_id\":\"c\",\"text\":\"Shows temperature dependence of both half reaction mass changes. ΔM_HF (red) shows slight increase with temperature while ΔM_TMA (blue) becomes more negative, indicating enhanced etching at higher temperatures.\"},{\"panel_id\":\"d\",\"text\":\"Shows mass change per cycle (MCPC) versus temperature. The increasingly negative MCPC from 250°C to 325°C indicates higher etch rates at elevated temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TMA Exposure Time (s) | Delta M_TMA (ng/(cm^2 cycle)) |\\n|---|---|\\n| 0.0 | 0 |\\n| 0.6 | -14 |\\n| 1.0 | -20 |\\n| 1.5 | -23 |\\n| 1.75 | -27 |\\n| 2.0 | -29 |\\n| 2.25 | -32 |\\n| 2.5 | -32 |\"},{\"panel_id\":\"b\",\"text\":\"| HF Exposure Time (s) | Delta M_HF (ng/(cm^2 cycle)) |\\n|---|---|\\n| 0.00 | 0 |\\n| 0.60 | 12 |\\n| 0.75 | 12 |\\n| 1.00 | 13 |\\n| 1.25 | 14 |\\n| 1.50 | 15 |\\n| 1.75 | 15 |\"},{\"panel_id\":\"c\",\"text\":\"| Temperature (°C) | Delta M_HF (Red Circles) | Delta M_TMA (Blue Squares) |\\n|---|---|---|\\n| 250 | 6 | -10 |\\n| 275 | 9 | -20 |\\n| 300 | 13 | -29 |\\n| 325 | 19 | -42 |\"},{\"panel_id\":\"d\",\"text\":\"| Temperature (°C) | MCPC (ng/(cm^2 cycle)) |\\n|---|---|\\n| 250 | -4 |\\n| 275 | -10 |\\n| 300 | -16 |\\n| 325 | -23 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch rate increases with temperature, from about 0.14 Å/cycle at 250°C to 0.75 Å/cycle at 325°C, as shown by the increasingly negative MCPC values.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both curves show saturation behavior where mass change plateaus after sufficient exposure time. For TMA, ΔM_TMA saturates at approximately −29 ng/cm² after 2 s exposure. For HF, ΔM_HF saturates at approximately 13 ng/cm² after 1 s exposure. This saturation indicates that the surface reactions terminate once available reactive sites are consumed, confirming self limiting behavior.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The x axes represent the precursor exposure time in seconds for each half reaction: TMA exposure time in (a) and HF exposure time in (b).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ΔM_TMA is negative because the ligand exchange step removes AlF₃ as volatile AlF(CH₃)₂, causing mass loss. ΔM_HF is positive because fluorination adds fluorine to form the heavier AlF₃ surface layer.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_1.jpg","caption":"Figure 1. Mass change versus time for $\\mathrm{Al}_2\\mathrm{O}_3$ ALE using sequential TMA and HF exposures at $300^{\\circ}\\mathrm{C}$","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_1","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":670,"height":528,"image_format":"jpeg","image_sha256":"dc9ad84c651c8e54d5eeff7cdb796075134b7c81403adbdffb76409e7a240385","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":670,"height":528}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This QCM measurement shows the mass change during 100 Al₂O₃ ALE cycles using sequential TMA and HF exposures at 300°C. The reaction sequence \\\"2-30-1-30\\\" indicates a 2.0 s TMA dose, 30 s N₂ purge, 1.0 s HF dose, and 30 s N₂ purge per cycle. The highly linear decrease in mass demonstrates that Al₂O₃ ALE proceeds at a constant rate, yielding a mass change per cycle (MCPC) of −15.9 ng/(cm² cycle), equivalent to an etch rate of 0.51 Å/cycle. The slight initial mass gain during the first cycle corresponds to the nucleation period where the AlF₃ surface layer is established on the hydroxylated Al₂O₃ substrate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass Change (ng/cm²) |\\n|---|---|\\n| 0 | 0 |\\n| 500 | -125 |\\n| 1000 | -250 |\\n| 1500 | -375 |\\n| 2000 | -500 |\\n| 2500 | -625 |\\n| 3000 | -750 |\\n| 3500 | -875 |\\n| 4000 | -1000 |\\n| 4500 | -1125 |\\n| 5000 | -1250 |\\n| 5500 | -1375 |\\n| 6000 | -1500 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the mass decreases over the time and negative values are displayed, the process corresponds to atomic layer etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the exposure time increases, the mass change decreases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"30s of N2 after TMA dosing, and 30s after HF.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mass change is inversely proportional at 300C. As, the time increases, mass change decreases.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The stepwise decrease in mass indicates that there are two steps needed to remove material. This is characteristic for ALE.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The observed etch rate is the slope. This gives an etch rate of 0.25ng/(cm²*s)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The notation 2-30-1-30 represent the standard way of reporting the dosing scheme in ALD and ALE sources. For this process it corresponds to 2 s of TMA dose, 30 s purge, 1 s HF dose, ending with another 30 s purge.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No the data does not provide enough information. For this also the thickness of the film before and after etch should be known.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The annotation indicates alternating exposures of TMA and HF, each followed by purge steps, repeated continuously during the measurement. In ALE, one half-reaction modifies the surface while the other removes material in a controlled way. The nearly constant negative slope in the curve shows that each cycle produces a similar net mass loss, resulting in steady cumulative etching over time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-The mass decreases monotonically with time.\\n-The slope is approximately constant over most of the plot.\\n-Mass loss scales proportionally with elapsed time.\\n-No long plateaus or reversals are observed.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Al2O3 at 300°C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A near-linear mass-loss curve implies that the ALE process is highly repeatable from cycle to cycle. Each exposure sequence removes approximately the same amount of material. This behavior indicates good controllability, allowing total removal to be estimated directly from time or cycle count.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It represents a 2.0 s TMA exposure, followed by a 30 s N₂ purge, then a 1.0 s HF exposure, and finally a 30 s N₂ purge.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the first ALE cycle, the initial hydroxylated Al₂O₃ substrate undergoes reactions that result in net mass gain rather than loss. The first TMA exposure produces AlCH₃* surface species through reaction with surface AlOH* groups, causing a mass gain of approximately 32 ng/cm². The subsequent first HF exposure fluorinates the Al₂O₃ to form an AlF₃ surface layer while converting AlCH₃* to AlF*, adding another ~33 ng/cm². This first cycle establishes the initial AlF₃ layer necessary for the ligand-exchange etching mechanism. Only after this nucleation period do subsequent cycles exhibit the characteristic mass loss associated with material removal.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The MCPC of −15.9 ng/(cm² cycle) corresponds to an etch rate of 0.51 Å/cycle, based on an Al₂O₃ film density of 3.1 g/cm³.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The highly linear mass decrease over 100 ALE cycles demonstrates that the etching process is extremely reproducible and proceeds at a constant rate throughout the experiment. This linearity is a hallmark of well-controlled atomic layer processes, indicating that each TMA and HF half-cycle removes a consistent amount of material regardless of how much Al₂O₃ has already been etched. It confirms that the sequential reactions are self-limiting and that there is no degradation or accumulation of byproducts that would alter the etch rate over time. This predictable behavior is essential for applications requiring precise thickness control at the atomic scale.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1) TMA (Trimethylaluminum) for 2.0 s\\n2) purged with nitrogen (N₂) for 30 s \\n3) HF (Hydrogen Fluoride) for 1.0 s\\n4) purged again with N₂ for 30 seconds\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, A linear etching of the Al₂O₃ film with a slope of the mass change versus time yields a mass change per cycle (MCPC) of −15.9 ng/(cm² cycle)\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The density provides the mass-to-volume relationship for the material. By dividing the MCPC (-15.9 ng/cm²/cycle) by the density, you calculate the volume of material removed per unit area per cycle. Converting this volumetric thickness (cm³/cm²) into angstroms yields the linear etch rate of 0.51 Å/cycle, linking a bulk material property to a nanoscale process metric.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies the first cycle serves as an activation or conditioning step, likely modifying the surface chemistry for subsequent etching. In manufacturing, this means the process recipe must account for an initial \\\"dead cycle\\\" to achieve stable, predictable etch rates. This stabilization is critical for achieving uniform depth control across a wafer.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"One ALE cycle consists of \\nI. TMA dose of 2.0 s\\nII. N2 purge of 30 s\\nIII. HF dose of 1.0 s\\nIV. N2 purge of 30 s.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"All ALE cycles show mass loss except during the first ALE cycle. The first cycle displays mass gains.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"slope of\\nthe mass change versus time yields a mass change per cycle\\n(MCPC) of −15.9 ng/(cm2 cycle). This MCPC represents the\\nremoval of 9.4 × 1013 “Al2O3” units/(cm2 cycle). This MCPC is\\nalso equivalent to an etch rate of 0.51 Å/cycle based on the\\nAl2O3 ALD film density of 3.1 g/cm3 determined by XRR.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1) Exposure to TMA, 2 seconds, 2)System purge with N2, 30 seconds, 3) Exposure to HF, 1 second, 4) System purge with N2, 30 seconds.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, pressure transients were observed during the TMA and HF exposures, which were 40 and 80 mTorr, respectively.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The observed MCPC was -15.9 ng/(cm^2 cycle), which corresponds to an etch rate of 0.51 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The first cycle displays mass gains of 32 ng/cm^2 for TMA and 33 ng/cm^2 for HF. The mass gain for TMA is attributed to the formation of AlCH3* surface species on the initial hydroxylated Al2O3 substrate. Exposure to HF can lead to the formation of AlF* surface species (by reaction with AlCH3*), but the underlying Al2O3 substrate can also be fluorinated to form AlF3. The initial ALE cycle primarily forms AlF3, which is why mass gain is observed rather than etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first ALE cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Etching of the Al₂O₃ film\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"63 seconds (2s + 30s + 1s + 30s).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"From the figure, one ALE cycle consists of 2 s TMA exposure, 30 s purge, 1 s HF exposure, and a further 30 s purge, giving a total cycle time of 63 s/cycle. Using two points from the graph, for example, (53 s; 65 ng/cm²) and (4648s; -1095 ng/cm²), the change in mass is Δ𝑀= - 1095 - 65 = - 1160 ng/cm². The change in time is Δ𝑡 = 4648 - 53 = 4595 s. The slope is therefore Δ𝑀/ Δ𝑡 = -1160/4595 ≈ - 0.25245 ng/(cm²⋅s). Multiplying by the cycle time gives the mass change per cycle: MCPC = (- 0.25245)(63) ≈ - 15.9 ng/(cm² ⋅ cycle).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mass decreases steadily throughout the entire experiment. The slope is quite consistent, this gives the appearance of a near-linear drop in mass as the cycles proceed. By the end of the 6000 s window, the sample has lost around 1500 ng/cm², showing that the etching process continues at a nearly uniform rate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"TMA dose (2), purge (30), HF dose (1), purge (30).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the first cycle, mass gains are observed in both the TMA and HF steps (+32 and +33 ng/cm², respectively), reflecting precursor adsorption on the Al₂O₃ surface. After several cycles, the process reaches a steady regime where the mass decreases linearly with each ALE cycle. The slope of this linear decrease corresponds to a mass loss of −15.9 ng/cm² per cycle, indicating a consistent etch rate and demonstrating stable layer-by-layer removal over 100 cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.51 Å per cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"TMA dose for 2 seconds, N₂ purge for 30 seconds, HF dose for 1 second, N₂ purge for 30 seconds, Repetition over 100 cycles\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_2.jpg","caption":"Figure 2. Enlargement of linear region of Figure 1 showing the individual mass changes during the sequential TMA and HF exposures at $300^{\\circ}\\mathrm{C}$","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_2","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":669,"height":508,"image_format":"jpeg","image_sha256":"d8475c470a17d7df9ba22a0d71bab53537e0afd0f2fc13020c9e2e944f7c0793","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":508}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This QCM enlargement shows the stepwise mass changes during individual TMA and HF exposures in the steady-state Al₂O₃ ALE regime at 300°C. Each TMA exposure causes a mass decrease (ΔM_TMA = −29 ng/cm²) as AlF₃ is removed via ligand-exchange. Each HF exposure causes a mass increase (ΔM_HF = +13 ng/cm²) as Al₂O₃ is fluorinated to form a new AlF₃ layer. The net mass change per cycle (MCPC = ΔM_TMA + ΔM_HF) is −15.9 ng/(cm² cycle), corresponding to 0.51 Å/cycle etch rate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass change (ng/cm²) | Precursor | Stage |\\n|--------|--------------------|-----|--------------------------|\\n| 6120 | -1440 | – | Start of shown segment |\\n| 6130 | -1455 | TMA | Mass decrease (ΔM_TMA) |\\n| 6160 | -1465 | TMA | End of TMA segment |\\n| 6185 | -1455 | HF | Mass increase (ΔM_HF) |\\n| 6210 | -1485 | HF | End of HF segment |\\n| 6240 | -1475 | TMA | TMA pulse |\\n| 6260 | -1510 | HF | HF pulse |\\n| 6290 | -1490 | HF | End of last HF segment |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows a zoom-in view of the entire mass change graph. Here, it is possible to observe the mass change after TMA and HF dosing at 300 °C on Al2O3, with decreasing values over the time and slight mass gains after the HF dose.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows a slight decrease as time increases. After the TMA dose, a mass loss can be observed. Subsequently, the HF dose leads to mass gain.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA can etch the fluorinated Al2O3 films, removing the AlF3 from the surface. This explains why decreases are observed after TMA dose.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The MCPC is around -20 ng/cm².\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"CH3 has an atomic mass of 15 amu, F has an atomic mass of 19 amuu. So the replacement of a singel CH3 group with a F atom increases the mass with 4 amu.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 65 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Based on the few shown cycles it seems that the mass changes are constant for the different cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mass increases (becomes less negative), appearing as an upward step corresponding to ΔM_TMA.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mass decreases (becomes more negative), appearing as a downward step associated with ΔM_HF.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The HF step produces the larger step magnitude, reaching a lower mass level of roughly −1510 ng/cm². The TMA step shows a smaller upward recovery to around −1470 ng/cm². Visually, the HF-related drop is sharper and deeper than the TMA-related gain in this zoomed window.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-ΔM_TMA from the upward mass step during TMA.\\n-ΔM_HF from the downward mass step during HF.\\n-MCPC from the net mass change across one full cycle.\\n-Presence of plateaus indicating stepwise behavior.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ΔM_TMA is the mass change after TMA exposure (−29 ng/cm²) and ΔM_HF is the mass change after HF exposure (+13 ng/cm²).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TMA causes mass loss because it removes the AlF₃ surface layer through ligand-exchange, producing volatile AlF(CH₃)₂ that desorbs. HF causes mass gain because fluorination converts lighter Al₂O₃ (102 amu) into heavier AlF₃ (168 amu for 2AlF₃), a 65% mass increase for the converted layer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"MCPC = ΔM_TMA + ΔM_HF = (−29) + (+13) = −15.9 ng/(cm² cycle).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It indicates highly reproducible, steady-state etching with constant material removal per cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The formation of volatile byproducts. \\nIn ALD, TMA adsorbs onto the surface and remains there, leading to a net mass gain. In contrast, during this ALE process, TMA reacts with the fluorinated surface (AlF₃) to form volatile species such as dimethylaluminum fluoride, which desorb from the surface. This desorption removes surface atoms, resulting in the observed mass loss (ΔM_TMA).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The HF/TMA ALE cycle provides true layer-by-layer control, as the mass drop is discrete and self-limiting. A purely thermal HF etch would cause continuous, non-self-limiting mass loss, leading to poor depth control and potential damage from excessive etching, as it lacks the crucial TMA step to regulate the reaction.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The immediate, sharp drop indicates a fast, self-limiting surface reaction. The mass loss is not gradual, confirming that TMA rapidly reacts with the pre-formed AlF₃ layer in a ligand-exchange process that is limited only by the number of AlF₃ sites created in the previous HF step.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No.\\nWhile QCM confirms self-limiting chemistry at the sensor spot, perfect wafer-scale uniformity depends on gas flow dynamics, temperature uniformity, and precursor delivery across the entire reactor chamber, which this single-point measurement cannot verify.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. It helps understand the pronouned mass changes after reactant exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TMA exposure results in a mass decrease. This behavior indicates TMA can remove the AlF3 surface layer on the Al2O3 film.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. A mass loss of ΔMTMA = −29 ng/cm2 was observed after 2.0 s of TMA exposure.\\n2. A mass gain of ΔMHF = 13 ng/cm2 after 1.0 s of HF exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This mass gain is consistent with the fluorination of Al2O3 to form an AlF3 surface layer. This AlF3 surface layer is then ready for the ligand-exchange reaction during the next TMA exposure.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Exposure to TMA causes the mass change to decrease by 29 ng/cm^2, whilst exposure to HF causes the mass change to increase by 13 ng/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"That TMA can successfully remove the AlF3 surface layer on Al2O3.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, each ALE cycle results in a net loss of mass and the mass loss per ALE cycle is constant.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"-16 ng/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3 cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"MCPC = -1474 - (-1457) = - 17 (ng/cm²⋅ cycle)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plateaus occur because after each TMA or HF pulse, the surface reactions quickly reach completion, so the mass stops changing. During the purge periods, excess precursor and volatile byproducts are flushed out without further reaction on the surface, which also keeps the signal flat. The graph therefore shows step changes during dosing and stable plateaus once the chamber returns to a reactant-free state.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"TMA exposure, Purge, HF exposure, Purge\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plot shows that each HF pulse produces a larger mass decrease than each TMA pulse. TMA steps create small, shallow decreases, while HF steps cause deeper drops. This difference in step magnitude reflects the stronger etching action of HF compared to the ligand-exchange removal associated with TMA.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"ΔM_TMA, ΔM_HF, TMA, HF arrows\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA leads to mass loss, while HF leads to mass gain.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"HF reacts with Al₂O₃, AlF₃ forms on the surface, This structural change results in mass increase\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the figure shows a stable and repeatable pattern of mass loss followed by mass gain, demonstrating that the etching process is operating as expected. The consistency of these responses across exposures confirms that both half-reactions are self-limiting and that the ALE mechanism is performing effectively at 300°C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_7.jpg","caption":"Figure 7. Enlargement of linear region of Figure 5 showing the individual mass changes during the sequential TMA and HF exposures at a) 250,b) 275 and c $325^{\\circ}C$","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_7","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":648,"height":867,"image_format":"jpeg","image_sha256":"38c9d1b518b5b6fbc5d7225fa33a024f7c68cf0e55f088e2e81e681a376e7ba6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":84,"y":1,"width":560,"height":262},{"panel_id":"b","x":75,"y":266,"width":570,"height":262},{"panel_id":"c","x":62,"y":531,"width":585,"height":336}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows mass change versus time at 250 °C during alternating TMA and HF exposures. The mass change exhibits small stepwise variations, indicating a relatively low mass change per cycle at this temperature.\"},{\"panel_id\":\"b\",\"text\":\"The line chart shows mass change versus time at 275 °C. Stepwise increases during TMA exposure and decreases during HF exposure are more pronounced than at 250 °C, indicating a higher mass change per cycle.\"},{\"panel_id\":\"c\",\"text\":\"The line chart shows mass change versus time at 325 °C. The stepwise mass changes are largest at this temperature, reflecting the highest mass change per cycle among the three conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass change (ng/cm²) |\\n|----------|----------------------|\\n| 6150 | ~-320 |\\n| 6200 | ~-330 |\\n| 6250 | ~-320 |\\n| 6300 | ~-330 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Mass change (ng/cm²) |\\n|----------|----------------------|\\n| 6150 | ~-950 |\\n| 6200 | ~-980 |\\n| 6250 | ~-950 |\\n| 6300 | ~-980 |\"},{\"panel_id\":\"c\",\"text\":\"| Time (s) | Mass change (ng/cm²) |\\n|----------|----------------------|\\n| 6150 | ~-2240 |\\n| 6200 | ~-2280 |\\n| 6250 | ~-2240 |\\n| 6300 | ~-2280 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mass change per cycle (MCPC) is given by the difference between the mass change after the TMA exposure and the mass change after the HF exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Eventhough in all three cases the same dose times are used, based on the curves it can be said that saturation is faster reached for higher temperatures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The sharp drop suggests a rapid removal of material from the surface during the HF exposure step, which is consistent with an etching process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"275°C is the better choice. While slower, its more moderate reaction kinetics offer greater control and reduce the risk of over-etching or damaging underlying layers, which is crucial for precision etching of ultrathin films.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Larger mass decreases are observed after the TMA exposures at 275 and 325 °C. A mass loss of ΔMTMA = −20.5 ng/cm2 is observed after a TMA exposure for 2.0 s at 275 °C and an even larger mass loss of ΔMTMA = −41.9 ng/cm2 after a TMA exposure for 2.0 s at 325 °C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"-20.5 ng/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"First cycle (−11 ng/cm²) shows larger MCPC that the second cycle (−9 ng/cm²).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mass losses after TMA and mass gains after HF exposures both increase with temperature: smallest at 250 °C, intermediate at 275 °C, and largest at 325 °C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Knowing how mass changes vary with temperature helps optimize ALE processes for precise etching. Higher temperatures produce larger mass losses during TMA exposures and larger mass gains during HF exposures, indicating more efficient removal of AlF₃ and fluorination of Al₂O₃. This information allows control over etch rates and surface layer formation, which is critical for applications requiring uniform, conformal, and predictable etching in microfabrication or semiconductor processing.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Increasing temperatures produce higher values of mass change after HF exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The highest etch rate is achieved at 325 degrees Celcius. The MCPC is the biggest for this temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The MCPC is around -25 ng/cm^2\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mass change per cycle is significantly larger at 325°C compared to the results at 250°C and 275°C. The steps in panel (c) are much more pronounced, spanning a range of over 60 ng/cm² within a single cycle, whereas the changes at lower temperatures are much smaller. This indicates a strong temperature dependence of the process.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Based on an Al₂O₃ density of 3.1 g/cm³, this MCPC corresponds to an etch rate of 0.75 Å/cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sharp drop indicates the rapid removal of material. The TMA reacts with the surface aluminum fluoride (AlF) layer created by the previous HF step. This reaction produces volatile byproducts (like dimethylaluminum fluoride) which immediately desorb into the gas phase, carrying away aluminum atoms and reducing the film mass.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies the process must have excellent temperature control and uniformity across the wafer. A stable, uniform temperature (likely at the higher end, e.g., 300-325°C) is required to ensure reproducible etch rates and consistent film removal across all devices on a production wafer.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In contrast, mass increases are observed after the HF fluorination reactions.\\n1. A mass increase of ΔMHF =6.3 ng/cm2 is observed after the HF exposure for 1.0 s at 250°C \\n2. HF exposures for 1.0 s produce larger mass gains of ΔMHF = 9.9 ng/cm2 at 275 °C\\n3. ΔMHF = 18.6 ng/cm2 at 325 °C double the mass gain from 275 °C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"-41.9 ng/cm^2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA half-cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"250 °C: ΔMₜₘₐ ≈ −10.5 ng/cm², ΔM_HF ≈ 6.3 ng/cm², 275 °C: ΔMₜₘₐ ≈ −20.5 ng/cm², ΔM_HF ≈ 9.9 ng/cm², 325 °C: ΔMₜₘₐ ≈ −41.9 ng/cm², ΔM_HF ≈ 18.6 ng/cm²\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The increase in mass after HF exposure is directly related to surface fluorination.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the figure this adsorption is visible, since this happens after 6100 s of processing, it can be assumed that it occurs every cycle, as usually deviations occur in the initial cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The step-like changes correspond to the alternating exposures of the surface to the TMA and HF precursors. Each precursor introduction causes a distinct surface reaction, resulting in a measurable change in the mass of the sample. The mass then remains relatively stable until the next precursor is introduced, creating the stepwise pattern.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The consistency of the mass change steps from one cycle to the next indicates a highly controlled and self-limiting process. This repeatability is crucial for ALE, as it ensures that a precise and predictable amount of material is removed in each cycle, allowing for accurate control over the final etch depth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ΔM_TMA increases from −10.5 ng/cm² at 250°C to −20.5 ng/cm² at 275°C to −41.9 ng/cm² at 325°C, indicating more AlF₃ removal at higher temperatures.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"HF fluorinates the Al₂O₃ surface to form a heavier AlF₃ layer (Al₂O₃ + 6HF → 2AlF₃ + 3H₂O), causing mass gain. TMA then removes this AlF₃ layer through ligand-exchange, producing volatile AlF(CH₃)₂ that leaves the surface, causing mass loss.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dashed lines indicate the mass change per cycle (MCPC), which is the net mass loss after one complete TMA + HF cycle, equal to ΔM_TMA + ΔM_HF.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In label (a) at 250°C, the step height is tiny (almost flat), implying an etch rate near zero. In label (c) at 325°C, the step height is huge (dropping by tens of ng/cm² per cycle). This exponential-like increase in material removal proves that the rate-limiting chemical reaction (likely ligand exchange) has a high activation energy and requires temperatures well above 250°C to proceed efficiently.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A small mass decrease is observed after the TMA exposure at 250 °C, a mass loss of ΔMTMA = −10.5 ng/cm2 after the TMA exposure for 2.0 s at 250 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"-10.5 ng/cm^2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The overall mass loss becomes larger as temperature increases.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3 cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Net etching (MCPC slightly negative)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The magnitude of the stepwise mass change increases with temperature. The 250 °C trace shows the smallest changes, while the 325 °C trace shows the largest stepwise mass loss, indicating stronger reactions at higher temperature.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"a3: 250 °C, 275 °C, 325 °C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Mass decreases observed after TMA exposures indicate the removal of the AlF₃ layer.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_2.jpg","caption":"Figure 2. Change in EPC vs $\\mathrm{NbF}_5$ pulse time at the etch temperature of $460^{\\circ}\\mathrm{C}$ . The $\\mathrm{CCl}_4$ pulse time was set to $3\\mathrm{~s~}$ and in-between $\\mathrm{N}_2$ purges were $6\\mathrm{~s~}$ each.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_2","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_2","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":458,"height":420,"image_format":"jpeg","image_sha256":"6bd0075d24129169b6352d920201bdad7c923597ba554aaaa1320c65f47bd8fd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":458,"height":420}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between the pulse time of NbF5 and the etch per cycle in Å/cycle in the cycle (X/6s/3s/6s). The temperature was fixed at 460°C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| NbF5 pulse time [s] | etch per cycle [Å/Cycle] |\\n|---|---|\\n| 0.0 | -0.05 |\\n| 0.5 | 0.49 |\\n| 1.75 | 0.87 |\\n| 3.0 | 1.46 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, it doesn't. When the process is self-limiting, the graph should look like a plateau, because adding more precursor doesn't increase etch rate any further, when the surface is saturated. Here, the EPC keeps increasing with increasing pulse time.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The pulse sequense is X/6/3/6 s (variable NbF5, 6s Purge, 3s CCl4, 6s Purge). The temperature is 460°C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The data point corresponding to a NbF5 pulse time of 0 seconds is centred at 0.0 Å/cycle. Although there are error bars due to experimental uncertanty, the deviation is small and eessentially zero material is removed without the second precursor.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.46 Å/Cycle.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_4.jpg","caption":"Figure 4. Effect of $\\mathrm{CCl_4}$ pulse time variation on EPC at $460^{\\circ}\\mathrm{C}$ . A total of 150 etch cycles were performed per data point.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_4","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_4","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":455,"height":411,"image_format":"jpeg","image_sha256":"b06334aa0f008f5a8113084ee99193fdc3bbae9f3417162cddfe805b649d8bf6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":455,"height":411}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the etch per cycle at different CCl₄ pulse times. The NbF5 and nitrogen pulse times were set to 3 and 6 seconds respectively. The temperature was fixed at 460 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| CCl₄ pulse time [s] | etch per cycle [Å/Cycle] |\\n|---|---|\\n| 0.5 | 1.1 |\\n| 1.5 | 1.05 |\\n|1.75 | 1.0 |\\n| 3.0 | 1.43 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 0.5 and 1.75 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The EPC displays partial self-limiting behavior rather than strict saturation. While it shows a plateau at roughly 1.1 Å/cycle, it noticebly increases to 1.4 Å/cycle when the pulse time is extended to 3 seconds. This suggests the reaction is not completely self-limiting.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.05 Å/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.5 seconds (EPC is nearly identical to that at 1.75 seconds pulse time, but saves time and precursor).\"}]}]"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig_9.jpg","caption":"FIG. 9. (Color online) Calculation method of band-gap energy by the linear fit of the relative absorption edge.","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig_9","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig_9","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The graph repesents the Tauc plot, calculation method of band-gap energy by the linear fit of the relative absorption edge. The linear fit line meets the x axis at the band gap value. the y axis in this curve represents the relative absorption coefficient.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Photon energy (eV) | [(-ln T)(hν)]² (a.u.) |\\n|--------------------|-----------------------|\\n| 3.0 | 0.00 |\\n| 3.5 | 0.00 |\\n| 4.0 | 0.00 |\\n| 4.5 | 0.00 |\\n| 4.7 | 0.01 |\\n| 4.8 | 0.05 |\\n| 4.9 | 0.20 |\\n| 5.0 | 0.60 |\\n| 5.1 | 1.20 |\\n| 5.2 | 2.00 |\\n| 5.3 | 3.20 |\\n| 5.4 | 4.60 |\\n| 5.5 | 6.20 |\\n| 5.6 | 8.00 |\\n| 5.7 | 10.00 |\\n| 5.8 | 12.20 |\\n| 5.9 | 14.60 |\\n| 6.0 | 17.00 |\\n| 6.1 | 19.50 |\\n| 6.2 | 22.00 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Measure the transmittance T spectrum as a function of wavelength λ.\\n\\nConvert wavelength to photon energy using hν=1240/𝜆\\t (with λ in nm and energy in eV).\\n\\nCompute an absorption coefficient proxy such as −ln(𝑇)−ln(T) or 𝛼α.\\n\\nApply the Tauc transformation by calculating [−ln(T)⋅hν]^2.\\n\\nPlot the transformed quantity against the photon energy to determine the optical band gap.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"AES with High-Energy Ions: Pro: Faster sputtering. Con: Can cause more atomic mixing and roughening, distorting depth resolution.\\n\\nXPS with Low-Energy Ions: Pro: Better depth resolution and more accurate quantification of light elements due to gentler sputtering.\\n\\nFor accurate light-element quantification with minimal distortion, XPS with low-energy ions is preferable. The trade-off is slower data acquisition, but it preserves interfacial sharpness for more reliable profiling.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The flat Ga and O profiles indicate excellent compositional uniformity throughout the film's bulk. For a dielectric application, this uniformity is crucial as it suggests a consistent bandgap and defect density with depth, which should lead to a high and predictable breakdown voltage, as electric fields would be evenly distributed without weak points from stoichiometric variations.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No.\\n\\nWhile the sharp interface and low bulk carbon are positive, the as-deposited film likely has a high density of point defects and disorder. These defects would act as charge traps, leading to poor channel mobility and unstable threshold voltage in a HEMT. Post-deposition annealing is typically required to reduce these defects and improve dielectric quality.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":0,"width":466,"height":367}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":469,"height":367,"image_format":"jpeg","image_sha256":"71c2203ac87ddf461e5da48fda934b41683e37187141928d6e76e2d8618f26c6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_58_fig5.jpg","caption":"FIG.5.XRD $\\Phi$ scan of $20 \\mathrm{nm}$ Ti/20 nm PE-ALD $\\mathrm{Co / Si(001)}$ annealed at $800^{\\circ}\\mathrm{C}$ The capping layer and remaining Co film were selectively etched before analysis.","id":"validation/atomic-layer-deposition/experimental-usecase/58/fig5","sample_id":"atomic-layer-deposition/experimental-usecase/58/fig5","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart displays intensity values against angles measured in degrees for an XRD measurement.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| φ (degree) | Intensity (a.u.) |\\n|---|---|\\n|-180|0 |\\n|-135|1|\\n|-90|0 |\\n|-45|1|\\n|0|0 |\\n|45|1|\\n|90|0 |\\n|135|1|\\n|180| 0|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"angular symmetry. Possitive and negative angles give the same intensity\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cristallinity\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Zero\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"From -180 to 180 degrees. Any more would not result in different data as the angles will have radial symmetry\"}]}]","bbox":[{"panel_id":"a","x":3,"y":3,"width":599,"height":467}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/Lee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":602,"height":470,"image_format":"jpeg","image_sha256":"6feadc04709cb591a26d82f824497e5095d8b38f0a60166b5ffe63220b422d47","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_13_fig4.jpg","caption":"Fig.4 PBE-D3 level minimum energy paths corresponding to the different reaction pathways (a, b) for $\\mathrm{MeCpPtMe}_3$ and (c) $\\mathrm{Pt(acac)_2}$ binding on pristine graphene. First and last points on the reaction coordinate correspond to the physisorbed and chemisorbed species, respectively. Physisorbed species of (a, b) and (c) are $-0.56$ and $-1.15\\mathrm{eV}$ with respect to the separated species (pristine graphene and $\\mathrm{MeCpPtMe}_3$ or $\\mathrm{Pt(acac)_2}$","id":"validation/atomic-layer-deposition/simulation-usecase/13/fig4","sample_id":"atomic-layer-deposition/simulation-usecase/13/fig4","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Minimum energy pathway for MeCpPtMe₃ binding on pristine graphene, showing the transition from a physisorbed state to a chemisorbed state with a high activation barrier and an overall endothermic reaction.\"},{\"panel_id\":\"b\",\"text\":\"Alternative reaction pathway for MeCpPtMe₃ on pristine graphene, showing a large kinetic barrier that limits chemisorption, explaining poor ALD nucleation on defect-free graphene.\"},{\"panel_id\":\"c\",\"text\":\"Minimum energy pathway for Pt(acac)₂ on pristine graphene, showing a strongly stabilized physisorbed state and a very high activation barrier, making chemisorption both thermodynamically and kinetically unfavorable.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction coordinate | Relative energy (eV) |\\n|---|---|\\n| Physisorbed state | −0.56 |\\n| Transition region | 0.40 |\\n| Activation barrier | 0.96 |\\n| Chemisorbed state | 0.36 |\"},{\"panel_id\":\"b\",\"text\":\"| Reaction coordinate | Relative energy (eV) |\\n|---|---|\\n| Physisorbed state | −0.56 |\\n| Transition region | 0.75 |\\n| Activation barrier | 1.38 |\\n| Chemisorbed state | 0.63 |\"},{\"panel_id\":\"c\",\"text\":\"| Reaction coordinate | Relative energy (eV) |\\n|---|---|\\n| Physisorbed state | −1.15 |\\n| Rising energy region | 1.50 |\\n| Activation barrier (chemisorption) | 4.14 |\\n| Chemisorbed state | 3.80 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The calculated minimum energy paths show high activation barriers, making the chemisorption process kinetically unfavorable.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Pt(acac)₂ shows the more stable physisorbed state, with a physisorption energy of −1.15 eV.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The energy profiles indicate that pristine graphene is a poor substrate for Pt ALD with both MeCpPtMe₃ and Pt(acac)₂. High kinetic barriers limit the formation of chemisorbed species, while strong physisorption and low reverse barriers favor desorption. As a result, only trace amounts of Pt are expected to nucleate, explaining the experimentally observed low ALD efficiency on defect-free graphene.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"High activation barriers for chemisorption reactions, Endothermic reaction energies for precursor conversion, Strong stabilization of physisorbed precursor species, Easy backward reactions that favor desorption over binding\"}]}]","bbox":[{"panel_id":"a","x":5,"y":2,"width":631,"height":504},{"panel_id":"b","x":8,"y":503,"width":634,"height":501},{"panel_id":"c","x":0,"y":998,"width":634,"height":488}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/Bora Karasulu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":641,"height":1489,"image_format":"jpeg","image_sha256":"2198a0370f8f99e568f62469d515d5a8f5382a81029b42fa2c4893876e26b848","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_13_fig8.jpg","caption":"Fig.8 PBE-D3 level minimum energy paths corresponding to the different reaction pathways for $\\mathrm{MeCpPtMe}_3$ binding on (a) epoxydated and (b) hydroxylated graphene oxide. First and last points on the reaction coordinate correspond to the physisorbed and chemisorbed species, respectively. Physisorbed species of (a) and (b) are $-1.55\\mathrm{eV}$ and $-0.46\\mathrm{eV}$ with respect to the separated species $(\\mathrm{MeCpPtMe}_3$ and GO-epoxy or GO-hydroxy). Activation energy for (b) is computed with respect to the lowest-energy minimum along the pathway (around $7\\dot{A}$ -","id":"validation/atomic-layer-deposition/simulation-usecase/13/fig8","sample_id":"atomic-layer-deposition/simulation-usecase/13/fig8","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Minimum-energy pathway for MeCpPtMe₃ binding on epoxydated graphene oxide, showing energy decrease from physisorbed to chemisorbed states. Adsorption is thermodynamically favorable and kinetically feasible, with a low activation barrier. Chemisorption is slightly stronger compared to hydroxylated GO.\"},{\"panel_id\":\"b\",\"text\":\"Minimum-energy pathway for MeCpPtMe₃ binding on hydroxylated graphene oxide, showing energy decrease from physisorbed to chemisorbed states. Adsorption is thermodynamically favorable and kinetically feasible, with low activation barriers, though slightly weaker than on epoxydated GO.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Coordinate [Å] | Energy [eV] |\\n|---|---|\\n| 0 | 0.0 |\\n| 5 | -1.0 |\\n| 7 | -2.31 |\\n| 10 | -3.00 |\\n| 15 | -4.24 |\"},{\"panel_id\":\"b\",\"text\":\"| Reaction Coordinate [Å] | Energy [eV] |\\n|---|---|\\n| 0 | 0.0 |\\n| 5 | -0.8 |\\n| 7 | -2.00 |\\n| 10 | -2.75 |\\n| 15 | -3.50 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The computed paths show an energetically downhill transition from physisorbed to chemisorbed states.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Epoxydated graphene oxide exhibits slightly stronger chemisorption (−4.24 eV) than hydroxylated graphene oxide (−3.50 eV).\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Graphene oxide provides thermodynamically favorable and kinetically accessible sites for MeCpPtMe3 chemisorption due to its surface oxygen functionalities. The low activation barriers and highly exothermic reaction pathways, regardless of whether the GO is epoxydated, hydroxylated, or a mixture, allow for stable Pt adsorption. Uniform functionalization further ensures continuous and controllable Pt loading, making GO a promising substrate for ALD applications.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Type of oxygen functionality (epoxy vs hydroxyl), Distribution of oxygen groups (uniform vs mixed), Single-sided versus double-sided functionalization, Planarity and structural order of the GO layer\"}]}]","bbox":[{"panel_id":"a","x":0,"y":4,"width":652,"height":516},{"panel_id":"b","x":12,"y":538,"width":650,"height":539}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/Bora Karasulu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":659,"height":1078,"image_format":"jpeg","image_sha256":"3e3e50c2539585ba114c102a04bf29bb8c5b3efa474810a687dc0e9d65f89698","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_13_fig9.jpg","caption":"Fig.9 PBE-D3 level minimum energy paths corresponding to the different reaction pathways for $\\mathsf{Pt(acac)}_2$ binding on (a) epoxydated and (b) hydroxylated graphene oxide. First and last points on the reaction coordinate correspond to the physisorbed and chemisorbed species, respectively. Physisorbed species of (a) and (b) are $-1.96\\in V$ and $-0.86$ eV with respect to the separated species $(\\mathsf{Pt}(\\mathsf{acac})_2$ and GO-epoxy or GO-hydroxyl).","id":"validation/atomic-layer-deposition/simulation-usecase/13/fig9","sample_id":"atomic-layer-deposition/simulation-usecase/13/fig9","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Minimum-energy pathway for Pt(acac)₂ binding on epoxydated graphene oxide, showing transition from physisorbed to chemisorbed species. The physisorption energy is −1.96 eV relative to the separated species, and the energy profile illustrates the reaction progression along the surface-specific reaction coordinate.\"},{\"panel_id\":\"b\",\"text\":\"Minimum-energy pathway for Pt(acac)₂ binding on hydroxylated graphene oxide, showing transition from physisorbed to chemisorbed species. The physisorption energy is −0.86 eV relative to the separated species, with the energy profile reflecting the reaction pathway along the hydroxylated surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Coordinate [Å] | Energy [eV] |\\n|---|---|\\n| 0 | 0.0 |\\n| 2 | -0.8 |\\n| 4 | -1.2 |\\n| 6 | -1.5 |\\n| 8 | -1.8 |\\n| 10 | -1.96 |\\n| 12 | -0.48 |\"},{\"panel_id\":\"b\",\"text\":\"| Reaction Coordinate [Å] | Energy [eV] |\\n|---|---|\\n| 0 | 0.0 |\\n| 2 | -0.4 |\\n| 4 | -0.6 |\\n| 6 | -0.8 |\\n| 8 | -0.86 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The minimum-energy paths show that the precursor first physisorbs on the surface before transitioning to the chemisorbed state.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The physisorption energy is −1.96 eV for epoxydated GO and −0.86 eV for hydroxylated GO, indicating stronger initial adsorption on epoxydated surfaces.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The energy profiles indicate that Pt(acac)₂ chemisorption is significantly hindered on both epoxydated and hydroxylated GO. High barriers and the formation of stable intermediates, particularly on hydroxylated GO, make the process energetically less favorable. Consequently, Pt(acac)₂ is not ideal for practical Pt nucleation or ALD on graphene oxide surfaces.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Epoxydated GO: stronger physisorption (−1.96 eV), larger energy drop along the path, Hydroxylated GO: weaker physisorption (−0.86 eV), smaller energy drop, Both types influence the relative stabilization of chemisorbed products and the overall reaction energy\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":632,"height":517},{"panel_id":"b","x":2,"y":519,"width":632,"height":495}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/Bora Karasulu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":639,"height":1019,"image_format":"jpeg","image_sha256":"784f4e3fa55a836a8f58c090f433c3d322f0e3e1d9e7222213e010176e8c3561","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_4_figure_6.jpg","caption":"Figure 6. DFT (GGA/PBE-D3) level minimum energy paths for the Hacac adsorption on (a) $\\mathrm{Al}_2\\mathrm{O}_3$ and (b) $\\mathrm{SiO}_2$ surfaces, as described by the corresponding chemical equations. Minimum energy structures of the important steps are also shown (yellow, green, and blue dots and corresponding insets), where some oxygen and hydrogen atoms are hidden for clarity. First points of the energy profiles correspond to the Hacac species physisorbed on each surface and have $\\Delta E_{\\mathrm{p}} = -0.75$ and $-0.37 \\mathrm{eV}$ with respect to the separated Hacac gas phase and $\\mathrm{Al}_2\\mathrm{O}_3 / \\mathrm{SiO}_2$ surfaces. These are taken as reference points $(0 \\mathrm{eV})$ to calculate the activation and final-state energies. Color code for atoms: silicon, pink; aluminum, light gray; hydrogen, white; oxygen, red; carbon, gray.","id":"validation/atomic-layer-deposition/simulation-usecase/4/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/4/figure_6","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The diagram represent the Density Functional Theory (DFT)-calculated reaction energy values comparing the chemisorption of Hacac on Al₂O₃ surface. The diagrams show the activation energy (Eₐ) and reaction energy (ΔE) for the ligand-exchange reaction where Hacac replaces a surface hydroxyl group.\"},{\"panel_id\":\"b\",\"text\":\"The diagram represent the Density Functional Theory (DFT)-calculated reaction energy values comparing the chemisorption of Hacac on SiO₂surfaces. The diagrams show the activation energy (Eₐ) and reaction energy (ΔE) for the ligand-exchange reaction where Hacac replaces a surface hydroxyl group. The key difference is that the reaction is exothermic and low-barrier on Al₂O₃ (ΔE = -0.49 eV, Eₐ = 0.01/0.25 eV) but endothermic and high-barrier on SiO₂ (ΔE = +0.98 eV, Eₐ = 2.35 eV).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction step | Energy (eV) |\\n| ------ | ------- |\\n| Physisorbed state | 0.05 |\\n| Transition State | 0.25 |\\n| Chemisorbed Product State | -0.49 |\"},{\"panel_id\":\"b\",\"text\":\"| Reaction step | Energy (eV) |\\n| ------ | ------- |\\n| Physisorbed state | 0.05 |\\n| Transition State | 2.25 |\\n| Chemisorbed Product State | 0.98 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It implies the Al–O(acac) bond is significantly stronger than the Si–O(acac) bond relative to their respective starting surface OH bonds.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It suggests performing DFT calculations of the inhibitor's adsorption reaction energy (ΔE) and activation energy (Eₐ) on both target and non-target surfaces. A successful selective process will likely require a large thermodynamic and kinetic preference (exothermic/low-barrier on target, endothermic/high-barrier on non-target) similar to the Al₂O₃/SiO₂ case shown here. This computational screen can rapidly identify promising inhibitor candidates before costly experimentation.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Physisorbed State: Hacac near the surface (0 eV reference).\\n\\nTransition State: Peak at ~0.25 eV (Eₐ).\\n\\nChemisorbed Product State: Al(acac)⁺ + H₂O(g) at -0.49 eV (ΔE).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The very low Eₐ on Al₂O₃ (0.25 eV) means Hacac reacts easily at low temperature, while the much higher Eₐ on SiO₂ (2.35 eV) means it barely reacts at all under the same conditions. This large gap ensures that at typical ALD temperatures (~250–300 °C), Hacac will strongly chemisorb on Al₂O₃ but remain essentially inactive on SiO₂. As a result, the process naturally becomes highly selective without needing extreme temperatures or additional steps.\"}]}]","bbox":[{"panel_id":"a","x":8,"y":28,"width":530,"height":549},{"panel_id":"b","x":619,"y":20,"width":536,"height":557}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":1155,"height":577,"image_format":"jpeg","image_sha256":"f989849d37fb1522082f88e6d755e8b7746c7b0e0cbfbd38ba09115dc07f52d9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig_5.jpg","caption":"Fig. 5 Saturation curves at $350^{\\circ}\\mathrm{C}$ for (a) Hhfac pulses using a $25\\mathrm{~s~H}_2$ plasma and (b) $\\mathrm{H}_{2}$ plasma exposure using $15\\times 50\\mathrm{~ms}$ pulses of Hhfac per cycle. The lines are guides to the eye.","id":"validation/atomic-layer-etching/experimental-usecase/10/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/10/fig_5","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Panel (a) demonstrates a saturating trend in EPC with increasing number of Hhfac pulses, indicating that the surface becomes increasingly modified until further pulses yield no significant additional etching.\"},{\"panel_id\":\"b\",\"text\":\"Panel (b) reveals that EPC also increases with H₂ plasma exposure time, but plateaus earlier, suggesting a time threshold beyond which further plasma exposure does not significantly enhance etching. Together, these panels show that both precursor dose and plasma activation are necessary for etching, but only up to saturation limits where the EPC levels off.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Hhfac pulses | EPC (nm) |\\n|------------------------|----------|\\n| 0 | 0.00 |\\n| 2 | 0.04 |\\n| 4 | 0.07 |\\n| 6 | 0.09 |\\n| 8 | 0.10 |\\n| 10 | 0.12 |\\n| 12 | 0.14 |\\n| 14 | 0.15 |\\n| 16 | 0.16 |\\n| 18 | 0.17 |\\n| 20 | 0.17 |\"},{\"panel_id\":\"b\",\"text\":\"| H₂ plasma exposure time (s) | EPC (nm) |\\n|-----------------------------|----------|\\n| 0 | 0.00 |\\n| 5 | 0.07 |\\n| 10 | 0.10 |\\n| 20 | 0.12 |\\n| 30 | 0.16 |\\n| 60 | 0.15 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hhfac pulses increase EPC to saturation, H₂ plasma time increases EPC then plateaus\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 15 - 20 pulses.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The observed saturation of EPC with respect to both Hhfac pulses and H₂ plasma exposure indicates a self-limiting process characteristic of atomic layer etching. In panel (a), the surface reaches a state where additional precursor does not further modify it, suggesting that all reactive sites have been consumed. In panel (b), the plasma step reaches a threshold where all chemically modified species have been activated or removed, and further exposure has negligible effect. This behavior supports the controlled, layer-by-layer removal fundamental to ALE.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":664,"height":341},{"panel_id":"b","x":2,"y":349,"width":661,"height":330}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":664,"height":683,"image_format":"jpeg","image_sha256":"3691f1296d0cd3a66343d5d5bf860479b74ef4dc10cdfed16260101e20627929","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig_6.jpg","caption":"Fig. 6 Thickness evolution as a function of pulses/cycles for (a) only Hhfac dosing, (b) only $\\mathsf{H}_2$ plasma exposure and (c) ALD cycles with Hhfac and $\\mathsf{H}_2$ plasma pulses. Experiments were performed at $350^{\\circ}\\mathrm{C}$ table temperature.","id":"validation/atomic-layer-etching/experimental-usecase/10/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/10/fig_6","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Panel (a) shows no change in thickness when only Hhfac is used, even after 20 pulses. Similarly, panel (b) indicates no measurable thickness reduction with H₂ plasma alone. In contrast, panel (c) demonstrates a steady linear decrease in film thickness when both Hhfac and H₂ plasma are applied in combination, highlighting the synergistic effect of this treatment for etching. These results suggest that neither precursor nor plasma alone is sufficient to etch the surface, but their combination results in controlled material removal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of pulses/cycles | Thickness change (nm) |\\n|--------------------------|------------------------|\\n| 0 | 0 |\\n| 5 | 0 |\\n| 10 | 0 |\\n| 15 | 0 |\\n| 20 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of pulses/cycles | Thickness change (nm) |\\n|--------------------------|------------------------|\\n| 0 | 0 |\\n| 5 | 0 |\\n| 10 | 0 |\\n| 15 | 0 |\\n| 20 | 0 |\"},{\"panel_id\":\"c\",\"text\":\"| Number of pulses/cycles | Thickness change (nm) |\\n|--------------------------|------------------------|\\n| 0 | 0 |\\n| 5 | -0.5 |\\n| 10 | -1.0 |\\n| 15 | -1.5 |\\n| 20 | -2.0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"(a): Hhfac, no thickness change, (b): H₂ plasma, no thickness change, (c): Hhfac + H₂ plasma, linear decrease in thickness\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thickness decreases by approx. 2.0 nm after 20 cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In atomic layer etching, precursor adsorption alone often does not result in material removal due to the lack of activation energy. Similarly, plasma exposure alone may not modify the surface sufficiently for etching to occur. The combination of Hhfac and H₂ plasma enables a two-step mechanism where Hhfac modifies the surface chemically, and the H₂ plasma provides energetic species to drive desorption or reaction of surface-bound fragments. This synergy allows for a self-limiting, layer-by-layer etching process, as shown by the controlled thickness decrease in panel (c).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":1,"y":0,"width":264,"height":492},{"panel_id":"b","x":268,"y":2,"width":201,"height":488},{"panel_id":"c","x":474,"y":1,"width":184,"height":492}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":661,"height":492,"image_format":"jpeg","image_sha256":"de9dcb045e003003c7fd5ba8995b4ca1bf2f1e17cf8b4c908c41ae3bb55f31a6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig_7.jpg","caption":"Fig. 7 (a) Etched thickness as a function of ALE cycles using 15 pulses of Hhfac dose/hold and $25\\mathrm{~s~H}_{2}$ plasma each cycle. Experiments were performed at $300^{\\circ}\\mathrm{C}$ table temperature, yielding an EPC of $0.08\\pm 0.01$ nm per cycle. (b) Reflection mode absorbance spectra for $\\mathrm{Al}_2\\mathrm{O}_3$ and $\\mathrm{SiO}_2$ planar films exposed to a $100\\mathrm{~ms}$ Hhfac dose, referenced to their as-deposited surfaces. The Al-O and hfac absorbance regions are highlighted in the figure.","id":"validation/atomic-layer-etching/experimental-usecase/10/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/10/fig_7","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Panel (a) shows that the Al₂O₃ film undergoes a steady decrease in thickness over repeated cycles at 300 °C, with an etch-per-cycle (EPC) of ~0.08 nm. In contrast, the SiO₂ film exhibits negligible thickness change under identical conditions, indicating that the process is selective for Al₂O₃.\"},{\"panel_id\":\"b\",\"text\":\"Panel (b) supports this observation by displaying FTIR spectra with distinct vibrational signatures for Al–O bonds and hfac ligands on the Al₂O₃ sample, while SiO₂ shows minimal spectral activity. Together, the panels demonstrate selective etching of Al₂O₃ and surface chemical verification via absorbance spectroscopy.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycles | Thickness change (nm) – SiO₂ | Thickness change (nm) – Al₂O₃ |\\n|--------|------------------------------|-------------------------------|\\n| 0 | 0.00 | 0.00 |\\n| 5 | 0.00 | -0.40 |\\n| 10 | 0.00 | -0.80 |\\n| 15 | 0.00 | -1.20 |\\n| 20 | 0.00 | -1.60 |\\n| 25 | 0.00 | -2.00 |\\n| 30 | 0.00 | -2.40 |\"},{\"panel_id\":\"b\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance – Al₂O₃ | Absorbance – SiO₂ |\\n|-------------------|---------------------|--------------------|\\n| 4000 | ~0.0001 | ~0.00005 |\\n| 3300 | ~0.0001 | ~0.00005 |\\n| 1650 | Peak (hfac) | — |\\n| 1000 | Strong peak (Al–O) | Low/no peak |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE process selectively etches Al₂O₃ without affecting SiO₂ under the tested conditions. This selectivity is important in applications where material-specific removal is critical, such as semiconductor patterning. The result implies that the chemical reactions involved are highly dependent on the film’s composition, likely due to differences in surface chemistry and bonding environments.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.08 nm per cycle\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Al–O stretching peak at ~1000 cm⁻¹, Hhfac ligand peak at ~1650 cm⁻¹\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":3,"y":3,"width":652,"height":560},{"panel_id":"b","x":17,"y":559,"width":640,"height":371}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":658,"height":933,"image_format":"jpeg","image_sha256":"b945ac25e4ac5e3072cf74f18da58dbafefed00c70e6079d1e824d7b40c452f6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_19_fig_4.jpg","caption":"Fig. 4. Influence of reactant exposure time and temperature on the sample mass changes during thermal ALE $\\mathrm{Al}_2\\mathrm{O}_3$ films using TMA and HF. (I): effect of TMA (a) and HF (b) exposure time on mass changes ( $\\Delta \\mathrm{M}_{\\mathrm{TMA}}$ and $\\Delta \\mathrm{M}_{\\mathrm{HF}}$ ) at $300^{\\circ}\\mathrm{C}$ , respectively; (II): effect of temperature on $\\Delta \\mathrm{M}_{\\mathrm{TMA}}$ and $\\Delta \\mathrm{M}_{\\mathrm{HF}}$ of TMA, HF half-reaction (a) and mass change per ALE cycle (MCPC). Reproduced from Ref. [28].","id":"validation/atomic-layer-etching/experimental-usecase/19/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/19/fig_4","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Shows mass change (ΔM_TMA) during the TMA half reaction versus TMA exposure time at 300°C. The curve approaches saturation around −29 ng/cm² after ~2 s, demonstrating self limiting ligand exchange behavior.\"},{\"panel_id\":\"b\",\"text\":\"Shows mass change (ΔM_HF) during the HF half reaction versus HF exposure time at 300°C. The curve saturates at ~13 ng/cm² after ~1 s, confirming self limiting fluorination.\"},{\"panel_id\":\"c\",\"text\":\"Shows temperature dependence of both half reaction mass changes. ΔM_HF (red) shows slight increase with temperature while ΔM_TMA (blue) becomes more negative, indicating enhanced etching at higher temperatures.\"},{\"panel_id\":\"d\",\"text\":\"Shows mass change per cycle (MCPC) versus temperature. The increasingly negative MCPC from 250°C to 325°C indicates higher etch rates at elevated temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TMA Exposure Time (s) | Delta M_TMA (ng/(cm^2 cycle)) |\\n|---|---|\\n| 0.0 | 0 |\\n| 0.6 | -14 |\\n| 1.0 | -20 |\\n| 1.5 | -23 |\\n| 1.75 | -27 |\\n| 2.0 | -29 |\\n| 2.25 | -32 |\\n| 2.5 | -32 |\"},{\"panel_id\":\"b\",\"text\":\"| HF Exposure Time (s) | Delta M_HF (ng/(cm^2 cycle)) |\\n|---|---|\\n| 0.00 | 0 |\\n| 0.60 | 12 |\\n| 0.75 | 12 |\\n| 1.00 | 13 |\\n| 1.25 | 14 |\\n| 1.50 | 15 |\\n| 1.75 | 15 |\"},{\"panel_id\":\"c\",\"text\":\"| Temperature (°C) | Delta M_HF (Red Circles) | Delta M_TMA (Blue Squares) |\\n|---|---|---|\\n| 250 | 6 | -10 |\\n| 275 | 9 | -20 |\\n| 300 | 13 | -29 |\\n| 325 | 19 | -42 |\"},{\"panel_id\":\"d\",\"text\":\"| Temperature (°C) | MCPC (ng/(cm^2 cycle)) |\\n|---|---|\\n| 250 | -4 |\\n| 275 | -10 |\\n| 300 | -16 |\\n| 325 | -23 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch rate increases with temperature, from about 0.14 Å/cycle at 250°C to 0.75 Å/cycle at 325°C, as shown by the increasingly negative MCPC values.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both curves show saturation behavior where mass change plateaus after sufficient exposure time. For TMA, ΔM_TMA saturates at approximately −29 ng/cm² after 2 s exposure. For HF, ΔM_HF saturates at approximately 13 ng/cm² after 1 s exposure. This saturation indicates that the surface reactions terminate once available reactive sites are consumed, confirming self limiting behavior.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The x axes represent the precursor exposure time in seconds for each half reaction: TMA exposure time in (a) and HF exposure time in (b).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ΔM_TMA is negative because the ligand exchange step removes AlF₃ as volatile AlF(CH₃)₂, causing mass loss. ΔM_HF is positive because fluorination adds fluorine to form the heavier AlF₃ surface layer.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":4,"width":524,"height":273},{"panel_id":"b","x":6,"y":284,"width":505,"height":298},{"panel_id":"c","x":517,"y":0,"width":478,"height":254},{"panel_id":"d","x":519,"y":253,"width":484,"height":317}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":1003,"height":625,"image_format":"jpeg","image_sha256":"fe375e9ee1fe47e45d4b42ba3fedcfd6c1755a377163739fe4d22aefbb130e97","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_1.jpg","caption":"Figure 1. Mass change versus time for $\\mathrm{Al}_2\\mathrm{O}_3$ ALE using sequential TMA and HF exposures at $300^{\\circ}\\mathrm{C}$","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_1","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This QCM measurement shows the mass change during 100 Al₂O₃ ALE cycles using sequential TMA and HF exposures at 300°C. The reaction sequence \\\"2-30-1-30\\\" indicates a 2.0 s TMA dose, 30 s N₂ purge, 1.0 s HF dose, and 30 s N₂ purge per cycle. The highly linear decrease in mass demonstrates that Al₂O₃ ALE proceeds at a constant rate, yielding a mass change per cycle (MCPC) of −15.9 ng/(cm² cycle), equivalent to an etch rate of 0.51 Å/cycle. The slight initial mass gain during the first cycle corresponds to the nucleation period where the AlF₃ surface layer is established on the hydroxylated Al₂O₃ substrate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass Change (ng/cm²) |\\n|---|---|\\n| 0 | 0 |\\n| 500 | -125 |\\n| 1000 | -250 |\\n| 1500 | -375 |\\n| 2000 | -500 |\\n| 2500 | -625 |\\n| 3000 | -750 |\\n| 3500 | -875 |\\n| 4000 | -1000 |\\n| 4500 | -1125 |\\n| 5000 | -1250 |\\n| 5500 | -1375 |\\n| 6000 | -1500 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the mass decreases over the time and negative values are displayed, the process corresponds to atomic layer etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the exposure time increases, the mass change decreases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"30s of N2 after TMA dosing, and 30s after HF.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mass change is inversely proportional at 300C. As, the time increases, mass change decreases.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The stepwise decrease in mass indicates that there are two steps needed to remove material. This is characteristic for ALE.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The observed etch rate is the slope. This gives an etch rate of 0.25ng/(cm²*s)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The notation 2-30-1-30 represent the standard way of reporting the dosing scheme in ALD and ALE sources. For this process it corresponds to 2 s of TMA dose, 30 s purge, 1 s HF dose, ending with another 30 s purge.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No the data does not provide enough information. For this also the thickness of the film before and after etch should be known.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The annotation indicates alternating exposures of TMA and HF, each followed by purge steps, repeated continuously during the measurement. In ALE, one half-reaction modifies the surface while the other removes material in a controlled way. The nearly constant negative slope in the curve shows that each cycle produces a similar net mass loss, resulting in steady cumulative etching over time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-The mass decreases monotonically with time.\\n-The slope is approximately constant over most of the plot.\\n-Mass loss scales proportionally with elapsed time.\\n-No long plateaus or reversals are observed.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Al2O3 at 300°C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A near-linear mass-loss curve implies that the ALE process is highly repeatable from cycle to cycle. Each exposure sequence removes approximately the same amount of material. This behavior indicates good controllability, allowing total removal to be estimated directly from time or cycle count.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It represents a 2.0 s TMA exposure, followed by a 30 s N₂ purge, then a 1.0 s HF exposure, and finally a 30 s N₂ purge.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the first ALE cycle, the initial hydroxylated Al₂O₃ substrate undergoes reactions that result in net mass gain rather than loss. The first TMA exposure produces AlCH₃* surface species through reaction with surface AlOH* groups, causing a mass gain of approximately 32 ng/cm². The subsequent first HF exposure fluorinates the Al₂O₃ to form an AlF₃ surface layer while converting AlCH₃* to AlF*, adding another ~33 ng/cm². This first cycle establishes the initial AlF₃ layer necessary for the ligand-exchange etching mechanism. Only after this nucleation period do subsequent cycles exhibit the characteristic mass loss associated with material removal.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The MCPC of −15.9 ng/(cm² cycle) corresponds to an etch rate of 0.51 Å/cycle, based on an Al₂O₃ film density of 3.1 g/cm³.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The highly linear mass decrease over 100 ALE cycles demonstrates that the etching process is extremely reproducible and proceeds at a constant rate throughout the experiment. This linearity is a hallmark of well-controlled atomic layer processes, indicating that each TMA and HF half-cycle removes a consistent amount of material regardless of how much Al₂O₃ has already been etched. It confirms that the sequential reactions are self-limiting and that there is no degradation or accumulation of byproducts that would alter the etch rate over time. This predictable behavior is essential for applications requiring precise thickness control at the atomic scale.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1) TMA (Trimethylaluminum) for 2.0 s\\n2) purged with nitrogen (N₂) for 30 s \\n3) HF (Hydrogen Fluoride) for 1.0 s\\n4) purged again with N₂ for 30 seconds\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, A linear etching of the Al₂O₃ film with a slope of the mass change versus time yields a mass change per cycle (MCPC) of −15.9 ng/(cm² cycle)\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The density provides the mass-to-volume relationship for the material. By dividing the MCPC (-15.9 ng/cm²/cycle) by the density, you calculate the volume of material removed per unit area per cycle. Converting this volumetric thickness (cm³/cm²) into angstroms yields the linear etch rate of 0.51 Å/cycle, linking a bulk material property to a nanoscale process metric.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies the first cycle serves as an activation or conditioning step, likely modifying the surface chemistry for subsequent etching. In manufacturing, this means the process recipe must account for an initial \\\"dead cycle\\\" to achieve stable, predictable etch rates. This stabilization is critical for achieving uniform depth control across a wafer.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"One ALE cycle consists of \\nI. TMA dose of 2.0 s\\nII. N2 purge of 30 s\\nIII. HF dose of 1.0 s\\nIV. N2 purge of 30 s.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"All ALE cycles show mass loss except during the first ALE cycle. The first cycle displays mass gains.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"slope of\\nthe mass change versus time yields a mass change per cycle\\n(MCPC) of −15.9 ng/(cm2 cycle). This MCPC represents the\\nremoval of 9.4 × 1013 “Al2O3” units/(cm2 cycle). This MCPC is\\nalso equivalent to an etch rate of 0.51 Å/cycle based on the\\nAl2O3 ALD film density of 3.1 g/cm3 determined by XRR.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1) Exposure to TMA, 2 seconds, 2)System purge with N2, 30 seconds, 3) Exposure to HF, 1 second, 4) System purge with N2, 30 seconds.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, pressure transients were observed during the TMA and HF exposures, which were 40 and 80 mTorr, respectively.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The observed MCPC was -15.9 ng/(cm^2 cycle), which corresponds to an etch rate of 0.51 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The first cycle displays mass gains of 32 ng/cm^2 for TMA and 33 ng/cm^2 for HF. The mass gain for TMA is attributed to the formation of AlCH3* surface species on the initial hydroxylated Al2O3 substrate. Exposure to HF can lead to the formation of AlF* surface species (by reaction with AlCH3*), but the underlying Al2O3 substrate can also be fluorinated to form AlF3. The initial ALE cycle primarily forms AlF3, which is why mass gain is observed rather than etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first ALE cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Etching of the Al₂O₃ film\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"63 seconds (2s + 30s + 1s + 30s).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"From the figure, one ALE cycle consists of 2 s TMA exposure, 30 s purge, 1 s HF exposure, and a further 30 s purge, giving a total cycle time of 63 s/cycle. Using two points from the graph, for example, (53 s; 65 ng/cm²) and (4648s; -1095 ng/cm²), the change in mass is Δ𝑀= - 1095 - 65 = - 1160 ng/cm². The change in time is Δ𝑡 = 4648 - 53 = 4595 s. The slope is therefore Δ𝑀/ Δ𝑡 = -1160/4595 ≈ - 0.25245 ng/(cm²⋅s). Multiplying by the cycle time gives the mass change per cycle: MCPC = (- 0.25245)(63) ≈ - 15.9 ng/(cm² ⋅ cycle).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mass decreases steadily throughout the entire experiment. The slope is quite consistent, this gives the appearance of a near-linear drop in mass as the cycles proceed. By the end of the 6000 s window, the sample has lost around 1500 ng/cm², showing that the etching process continues at a nearly uniform rate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"TMA dose (2), purge (30), HF dose (1), purge (30).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the first cycle, mass gains are observed in both the TMA and HF steps (+32 and +33 ng/cm², respectively), reflecting precursor adsorption on the Al₂O₃ surface. After several cycles, the process reaches a steady regime where the mass decreases linearly with each ALE cycle. The slope of this linear decrease corresponds to a mass loss of −15.9 ng/cm² per cycle, indicating a consistent etch rate and demonstrating stable layer-by-layer removal over 100 cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.51 Å per cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"TMA dose for 2 seconds, N₂ purge for 30 seconds, HF dose for 1 second, N₂ purge for 30 seconds, Repetition over 100 cycles\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":670,"height":528}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":670,"height":528,"image_format":"jpeg","image_sha256":"dc9ad84c651c8e54d5eeff7cdb796075134b7c81403adbdffb76409e7a240385","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_2.jpg","caption":"Figure 2. Enlargement of linear region of Figure 1 showing the individual mass changes during the sequential TMA and HF exposures at $300^{\\circ}\\mathrm{C}$","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_2","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This QCM enlargement shows the stepwise mass changes during individual TMA and HF exposures in the steady-state Al₂O₃ ALE regime at 300°C. Each TMA exposure causes a mass decrease (ΔM_TMA = −29 ng/cm²) as AlF₃ is removed via ligand-exchange. Each HF exposure causes a mass increase (ΔM_HF = +13 ng/cm²) as Al₂O₃ is fluorinated to form a new AlF₃ layer. The net mass change per cycle (MCPC = ΔM_TMA + ΔM_HF) is −15.9 ng/(cm² cycle), corresponding to 0.51 Å/cycle etch rate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass change (ng/cm²) | Precursor | Stage |\\n|--------|--------------------|-----|--------------------------|\\n| 6120 | -1440 | – | Start of shown segment |\\n| 6130 | -1455 | TMA | Mass decrease (ΔM_TMA) |\\n| 6160 | -1465 | TMA | End of TMA segment |\\n| 6185 | -1455 | HF | Mass increase (ΔM_HF) |\\n| 6210 | -1485 | HF | End of HF segment |\\n| 6240 | -1475 | TMA | TMA pulse |\\n| 6260 | -1510 | HF | HF pulse |\\n| 6290 | -1490 | HF | End of last HF segment |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows a zoom-in view of the entire mass change graph. Here, it is possible to observe the mass change after TMA and HF dosing at 300 °C on Al2O3, with decreasing values over the time and slight mass gains after the HF dose.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows a slight decrease as time increases. After the TMA dose, a mass loss can be observed. Subsequently, the HF dose leads to mass gain.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA can etch the fluorinated Al2O3 films, removing the AlF3 from the surface. This explains why decreases are observed after TMA dose.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The MCPC is around -20 ng/cm².\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"CH3 has an atomic mass of 15 amu, F has an atomic mass of 19 amuu. So the replacement of a singel CH3 group with a F atom increases the mass with 4 amu.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 65 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Based on the few shown cycles it seems that the mass changes are constant for the different cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mass increases (becomes less negative), appearing as an upward step corresponding to ΔM_TMA.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mass decreases (becomes more negative), appearing as a downward step associated with ΔM_HF.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The HF step produces the larger step magnitude, reaching a lower mass level of roughly −1510 ng/cm². The TMA step shows a smaller upward recovery to around −1470 ng/cm². Visually, the HF-related drop is sharper and deeper than the TMA-related gain in this zoomed window.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-ΔM_TMA from the upward mass step during TMA.\\n-ΔM_HF from the downward mass step during HF.\\n-MCPC from the net mass change across one full cycle.\\n-Presence of plateaus indicating stepwise behavior.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ΔM_TMA is the mass change after TMA exposure (−29 ng/cm²) and ΔM_HF is the mass change after HF exposure (+13 ng/cm²).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TMA causes mass loss because it removes the AlF₃ surface layer through ligand-exchange, producing volatile AlF(CH₃)₂ that desorbs. HF causes mass gain because fluorination converts lighter Al₂O₃ (102 amu) into heavier AlF₃ (168 amu for 2AlF₃), a 65% mass increase for the converted layer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"MCPC = ΔM_TMA + ΔM_HF = (−29) + (+13) = −15.9 ng/(cm² cycle).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It indicates highly reproducible, steady-state etching with constant material removal per cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The formation of volatile byproducts. \\nIn ALD, TMA adsorbs onto the surface and remains there, leading to a net mass gain. In contrast, during this ALE process, TMA reacts with the fluorinated surface (AlF₃) to form volatile species such as dimethylaluminum fluoride, which desorb from the surface. This desorption removes surface atoms, resulting in the observed mass loss (ΔM_TMA).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The HF/TMA ALE cycle provides true layer-by-layer control, as the mass drop is discrete and self-limiting. A purely thermal HF etch would cause continuous, non-self-limiting mass loss, leading to poor depth control and potential damage from excessive etching, as it lacks the crucial TMA step to regulate the reaction.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The immediate, sharp drop indicates a fast, self-limiting surface reaction. The mass loss is not gradual, confirming that TMA rapidly reacts with the pre-formed AlF₃ layer in a ligand-exchange process that is limited only by the number of AlF₃ sites created in the previous HF step.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No.\\nWhile QCM confirms self-limiting chemistry at the sensor spot, perfect wafer-scale uniformity depends on gas flow dynamics, temperature uniformity, and precursor delivery across the entire reactor chamber, which this single-point measurement cannot verify.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. It helps understand the pronouned mass changes after reactant exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TMA exposure results in a mass decrease. This behavior indicates TMA can remove the AlF3 surface layer on the Al2O3 film.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. A mass loss of ΔMTMA = −29 ng/cm2 was observed after 2.0 s of TMA exposure.\\n2. A mass gain of ΔMHF = 13 ng/cm2 after 1.0 s of HF exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This mass gain is consistent with the fluorination of Al2O3 to form an AlF3 surface layer. This AlF3 surface layer is then ready for the ligand-exchange reaction during the next TMA exposure.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Exposure to TMA causes the mass change to decrease by 29 ng/cm^2, whilst exposure to HF causes the mass change to increase by 13 ng/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"That TMA can successfully remove the AlF3 surface layer on Al2O3.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, each ALE cycle results in a net loss of mass and the mass loss per ALE cycle is constant.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"-16 ng/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3 cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"MCPC = -1474 - (-1457) = - 17 (ng/cm²⋅ cycle)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plateaus occur because after each TMA or HF pulse, the surface reactions quickly reach completion, so the mass stops changing. During the purge periods, excess precursor and volatile byproducts are flushed out without further reaction on the surface, which also keeps the signal flat. The graph therefore shows step changes during dosing and stable plateaus once the chamber returns to a reactant-free state.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"TMA exposure, Purge, HF exposure, Purge\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plot shows that each HF pulse produces a larger mass decrease than each TMA pulse. TMA steps create small, shallow decreases, while HF steps cause deeper drops. This difference in step magnitude reflects the stronger etching action of HF compared to the ligand-exchange removal associated with TMA.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"ΔM_TMA, ΔM_HF, TMA, HF arrows\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA leads to mass loss, while HF leads to mass gain.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"HF reacts with Al₂O₃, AlF₃ forms on the surface, This structural change results in mass increase\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the figure shows a stable and repeatable pattern of mass loss followed by mass gain, demonstrating that the etching process is operating as expected. The consistency of these responses across exposures confirms that both half-reactions are self-limiting and that the ALE mechanism is performing effectively at 300°C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":508}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":669,"height":508,"image_format":"jpeg","image_sha256":"d8475c470a17d7df9ba22a0d71bab53537e0afd0f2fc13020c9e2e944f7c0793","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_7.jpg","caption":"Figure 7. Enlargement of linear region of Figure 5 showing the individual mass changes during the sequential TMA and HF exposures at a) 250,b) 275 and c $325^{\\circ}C$","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_7","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows mass change versus time at 250 °C during alternating TMA and HF exposures. The mass change exhibits small stepwise variations, indicating a relatively low mass change per cycle at this temperature.\"},{\"panel_id\":\"b\",\"text\":\"The line chart shows mass change versus time at 275 °C. Stepwise increases during TMA exposure and decreases during HF exposure are more pronounced than at 250 °C, indicating a higher mass change per cycle.\"},{\"panel_id\":\"c\",\"text\":\"The line chart shows mass change versus time at 325 °C. The stepwise mass changes are largest at this temperature, reflecting the highest mass change per cycle among the three conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass change (ng/cm²) |\\n|----------|----------------------|\\n| 6150 | ~-320 |\\n| 6200 | ~-330 |\\n| 6250 | ~-320 |\\n| 6300 | ~-330 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Mass change (ng/cm²) |\\n|----------|----------------------|\\n| 6150 | ~-950 |\\n| 6200 | ~-980 |\\n| 6250 | ~-950 |\\n| 6300 | ~-980 |\"},{\"panel_id\":\"c\",\"text\":\"| Time (s) | Mass change (ng/cm²) |\\n|----------|----------------------|\\n| 6150 | ~-2240 |\\n| 6200 | ~-2280 |\\n| 6250 | ~-2240 |\\n| 6300 | ~-2280 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mass change per cycle (MCPC) is given by the difference between the mass change after the TMA exposure and the mass change after the HF exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Eventhough in all three cases the same dose times are used, based on the curves it can be said that saturation is faster reached for higher temperatures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The sharp drop suggests a rapid removal of material from the surface during the HF exposure step, which is consistent with an etching process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"275°C is the better choice. While slower, its more moderate reaction kinetics offer greater control and reduce the risk of over-etching or damaging underlying layers, which is crucial for precision etching of ultrathin films.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Larger mass decreases are observed after the TMA exposures at 275 and 325 °C. A mass loss of ΔMTMA = −20.5 ng/cm2 is observed after a TMA exposure for 2.0 s at 275 °C and an even larger mass loss of ΔMTMA = −41.9 ng/cm2 after a TMA exposure for 2.0 s at 325 °C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"-20.5 ng/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"First cycle (−11 ng/cm²) shows larger MCPC that the second cycle (−9 ng/cm²).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mass losses after TMA and mass gains after HF exposures both increase with temperature: smallest at 250 °C, intermediate at 275 °C, and largest at 325 °C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Knowing how mass changes vary with temperature helps optimize ALE processes for precise etching. Higher temperatures produce larger mass losses during TMA exposures and larger mass gains during HF exposures, indicating more efficient removal of AlF₃ and fluorination of Al₂O₃. This information allows control over etch rates and surface layer formation, which is critical for applications requiring uniform, conformal, and predictable etching in microfabrication or semiconductor processing.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Increasing temperatures produce higher values of mass change after HF exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The highest etch rate is achieved at 325 degrees Celcius. The MCPC is the biggest for this temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The MCPC is around -25 ng/cm^2\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mass change per cycle is significantly larger at 325°C compared to the results at 250°C and 275°C. The steps in panel (c) are much more pronounced, spanning a range of over 60 ng/cm² within a single cycle, whereas the changes at lower temperatures are much smaller. This indicates a strong temperature dependence of the process.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Based on an Al₂O₃ density of 3.1 g/cm³, this MCPC corresponds to an etch rate of 0.75 Å/cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sharp drop indicates the rapid removal of material. The TMA reacts with the surface aluminum fluoride (AlF) layer created by the previous HF step. This reaction produces volatile byproducts (like dimethylaluminum fluoride) which immediately desorb into the gas phase, carrying away aluminum atoms and reducing the film mass.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies the process must have excellent temperature control and uniformity across the wafer. A stable, uniform temperature (likely at the higher end, e.g., 300-325°C) is required to ensure reproducible etch rates and consistent film removal across all devices on a production wafer.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In contrast, mass increases are observed after the HF fluorination reactions.\\n1. A mass increase of ΔMHF =6.3 ng/cm2 is observed after the HF exposure for 1.0 s at 250°C \\n2. HF exposures for 1.0 s produce larger mass gains of ΔMHF = 9.9 ng/cm2 at 275 °C\\n3. ΔMHF = 18.6 ng/cm2 at 325 °C double the mass gain from 275 °C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"-41.9 ng/cm^2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA half-cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"250 °C: ΔMₜₘₐ ≈ −10.5 ng/cm², ΔM_HF ≈ 6.3 ng/cm², 275 °C: ΔMₜₘₐ ≈ −20.5 ng/cm², ΔM_HF ≈ 9.9 ng/cm², 325 °C: ΔMₜₘₐ ≈ −41.9 ng/cm², ΔM_HF ≈ 18.6 ng/cm²\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The increase in mass after HF exposure is directly related to surface fluorination.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the figure this adsorption is visible, since this happens after 6100 s of processing, it can be assumed that it occurs every cycle, as usually deviations occur in the initial cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The step-like changes correspond to the alternating exposures of the surface to the TMA and HF precursors. Each precursor introduction causes a distinct surface reaction, resulting in a measurable change in the mass of the sample. The mass then remains relatively stable until the next precursor is introduced, creating the stepwise pattern.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The consistency of the mass change steps from one cycle to the next indicates a highly controlled and self-limiting process. This repeatability is crucial for ALE, as it ensures that a precise and predictable amount of material is removed in each cycle, allowing for accurate control over the final etch depth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ΔM_TMA increases from −10.5 ng/cm² at 250°C to −20.5 ng/cm² at 275°C to −41.9 ng/cm² at 325°C, indicating more AlF₃ removal at higher temperatures.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"HF fluorinates the Al₂O₃ surface to form a heavier AlF₃ layer (Al₂O₃ + 6HF → 2AlF₃ + 3H₂O), causing mass gain. TMA then removes this AlF₃ layer through ligand-exchange, producing volatile AlF(CH₃)₂ that leaves the surface, causing mass loss.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dashed lines indicate the mass change per cycle (MCPC), which is the net mass loss after one complete TMA + HF cycle, equal to ΔM_TMA + ΔM_HF.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In label (a) at 250°C, the step height is tiny (almost flat), implying an etch rate near zero. In label (c) at 325°C, the step height is huge (dropping by tens of ng/cm² per cycle). This exponential-like increase in material removal proves that the rate-limiting chemical reaction (likely ligand exchange) has a high activation energy and requires temperatures well above 250°C to proceed efficiently.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A small mass decrease is observed after the TMA exposure at 250 °C, a mass loss of ΔMTMA = −10.5 ng/cm2 after the TMA exposure for 2.0 s at 250 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"-10.5 ng/cm^2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The overall mass loss becomes larger as temperature increases.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3 cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Net etching (MCPC slightly negative)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The magnitude of the stepwise mass change increases with temperature. The 250 °C trace shows the smallest changes, while the 325 °C trace shows the largest stepwise mass loss, indicating stronger reactions at higher temperature.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"a3: 250 °C, 275 °C, 325 °C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Mass decreases observed after TMA exposures indicate the removal of the AlF₃ layer.\"}]}]","bbox":[{"panel_id":"a","x":84,"y":1,"width":560,"height":262},{"panel_id":"b","x":75,"y":266,"width":570,"height":262},{"panel_id":"c","x":62,"y":531,"width":585,"height":336}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:img_caption"},"width":648,"height":867,"image_format":"jpeg","image_sha256":"38c9d1b518b5b6fbc5d7225fa33a024f7c68cf0e55f088e2e81e681a376e7ba6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_2.jpg","caption":"Figure 2. Change in EPC vs $\\mathrm{NbF}_5$ pulse time at the etch temperature of $460^{\\circ}\\mathrm{C}$ . The $\\mathrm{CCl}_4$ pulse time was set to $3\\mathrm{~s~}$ and in-between $\\mathrm{N}_2$ purges were $6\\mathrm{~s~}$ each.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_2","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_2","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between the pulse time of NbF5 and the etch per cycle in Å/cycle in the cycle (X/6s/3s/6s). The temperature was fixed at 460°C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| NbF5 pulse time [s] | etch per cycle [Å/Cycle] |\\n|---|---|\\n| 0.0 | -0.05 |\\n| 0.5 | 0.49 |\\n| 1.75 | 0.87 |\\n| 3.0 | 1.46 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, it doesn't. When the process is self-limiting, the graph should look like a plateau, because adding more precursor doesn't increase etch rate any further, when the surface is saturated. Here, the EPC keeps increasing with increasing pulse time.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The pulse sequense is X/6/3/6 s (variable NbF5, 6s Purge, 3s CCl4, 6s Purge). The temperature is 460°C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The data point corresponding to a NbF5 pulse time of 0 seconds is centred at 0.0 Å/cycle. Although there are error bars due to experimental uncertanty, the deviation is small and eessentially zero material is removed without the second precursor.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.46 Å/Cycle.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":458,"height":420}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":458,"height":420,"image_format":"jpeg","image_sha256":"6bd0075d24129169b6352d920201bdad7c923597ba554aaaa1320c65f47bd8fd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_4.jpg","caption":"Figure 4. Effect of $\\mathrm{CCl_4}$ pulse time variation on EPC at $460^{\\circ}\\mathrm{C}$ . A total of 150 etch cycles were performed per data point.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_4","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_4","subset":"line-chart","split":"validation","classification":[{"panel_id":"a","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the etch per cycle at different CCl₄ pulse times. The NbF5 and nitrogen pulse times were set to 3 and 6 seconds respectively. The temperature was fixed at 460 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| CCl₄ pulse time [s] | etch per cycle [Å/Cycle] |\\n|---|---|\\n| 0.5 | 1.1 |\\n| 1.5 | 1.05 |\\n|1.75 | 1.0 |\\n| 3.0 | 1.43 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 0.5 and 1.75 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The EPC displays partial self-limiting behavior rather than strict saturation. While it shows a plateau at roughly 1.1 Å/cycle, it noticebly increases to 1.4 Å/cycle when the pulse time is extended to 3 seconds. This suggests the reaction is not completely self-limiting.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.05 Å/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.5 seconds (EPC is nearly identical to that at 1.75 seconds pulse time, but saves time and precursor).\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":455,"height":411}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"line chart","caption_source":"content.json:image_caption"},"width":455,"height":411,"image_format":"jpeg","image_sha256":"b06334aa0f008f5a8113084ee99193fdc3bbae9f3417162cddfe805b649d8bf6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/molecular-structure-diagram/test/metadata.jsonl b/subsets/molecular-structure-diagram/test/metadata.jsonl index a8d4fe849aa796ebbb7a6a0eec34a55214425673..174d17cf3f3dca8b134f8ebf68bd45b76946da28 100644 --- a/subsets/molecular-structure-diagram/test/metadata.jsonl +++ b/subsets/molecular-structure-diagram/test/metadata.jsonl @@ -1,72 +1,72 @@ -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_1.jpg","caption":"Figure 1. Cluster models used to represent the active functional groups on the $\\mathrm{SiO_2}$ substrate: (a) $\\mathrm{(SiH_3O)_3Si - OH}$ cluster used to represent isolated surface $-\\mathrm{OH}$ groups, (b) $\\mathrm{Si_6O_7H_{14}}$ cluster used to represent adjacent hydrogen-bonded $-\\mathrm{OH}$ groups, and (c) the $\\mathrm{Si_2O_6H_4}$ cluster used to represent oxygen bridges on the $\\mathrm{SiO_2}$ substrate.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_1","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":667,"height":500,"image_format":"jpeg","image_sha256":"25d617a4dbb4874dbd1c4eef7a478d04136fe18dc33c73d58fd554851a63e509","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":6,"width":324,"height":241},{"panel_id":"b","x":344,"y":22,"width":321,"height":214},{"panel_id":"c","x":169,"y":306,"width":330,"height":150}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Isolated –OH groups on hydroxylated SiO₂ clusters, representing individual hydroxyl sites in ALD simulations. Small cluster models were used to capture the local reaction environment.\"},{\"panel_id\":\"b\",\"text\":\"Adjacent hydrogen-bonded –OH groups, highlighting interactions between neighboring hydroxyls on hydroxylated SiO₂ clusters. Small cluster models were used for simulations.\"},{\"panel_id\":\"c\",\"text\":\"Oxygen bridges (Si–O–Si) on SiO₂ clusters, representing bridge sites on the surface. Small clusters were used for simulations, with a larger cluster (Si₁₂O₁₄H₂₄) validating cluster size effects.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Surface Functional Group | Cluster Model | Notes |\\n|--------------------------|---------------|-------|\\n| Isolated –OH groups | Small cluster | Representative of single hydroxyl sites on SiO₂ |\"},{\"panel_id\":\"b\",\"text\":\"| Surface Functional Group | Cluster Model | Notes |\\n|--------------------------|---------------|-------|\\n| Adjacent hydrogen-bonded –OH groups | Small cluster | Representative of –OH groups with hydrogen bonding |\"},{\"panel_id\":\"c\",\"text\":\"| Surface Functional Group | Cluster Model | Notes |\\n|--------------------------|---------------|-------|\\n| Oxygen bridges | Small cluster | Represents Si–O–Si bridge sites on the surface |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Adjacent hydrogen-bonded –OH groups.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Knowing the distinct types of surface sites allows researchers to model reaction kinetics more accurately, as different sites may have varying adsorption rates and mechanisms. This ensures that simulations can predict coverage, reaction pathways, and surface saturation more realistically. By using small cluster models for each surface type, the study achieves computational efficiency while capturing the essential chemical behavior, and validation with larger clusters ensures the reliability of the results. This knowledge can guide experimental design and process optimization for uniform and controlled TiO₂ film growth.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Panel (a): Isolated –OH groups; individual hydroxyl sites, Panel (b): Adjacent hydrogen-bonded –OH groups; neighboring hydroxyls interacting via hydrogen bonding, Panel (c): Oxygen bridges; Si–O–Si bridge sites connecting two silicon atoms\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_10.jpg","caption":"Figure 10. Stationary points for reaction E calculated using B3LYP/6- $3\\mathrm{TiO}(\\mathrm{d},\\mathrm{p})$ a) adsorption equilibrium state b) transition state. Only the reactive site of the $\\mathrm{SiO_2}$ substrate is shown for clarity in the figure.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_10","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":667,"height":366,"image_format":"jpeg","image_sha256":"806b371eed3046a3d2090d7b901f770a648bc11fb6c2d6e161942b49276931b8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":22,"width":297,"height":338},{"panel_id":"b","x":341,"y":8,"width":322,"height":354}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Adsorption equilibrium state for reaction E on the SiO₂ substrate, showing H₂O interacting with the −TiI₂ species via a Lewis acid/base interaction. Only the reactive site of the substrate is displayed.\"},{\"panel_id\":\"b\",\"text\":\"Transition state for reaction E on the SiO₂ substrate, showing partial breaking of the Ti−I bond and partial formation of the H−I bond. Only the reactive site of the substrate is displayed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Element|Color|\\n|-------|-----|\\n|Ti|Gray|\\n|O|Red|\\n|H|White|\"},{\"panel_id\":\"b\",\"text\":\"|Element|Color|\\n|-------|-----|\\n|Ti|Gray|\\n|O|Red|\\n|H|White|\\n|I|Purple|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Ti−O bond distance shortens as the system progresses from the adsorption equilibrium state to the transition state.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The transition state represents a high-energy configuration where the Ti−I bond is partially broken while the H−I bond is partially formed. This rearrangement allows the H2O molecule to transfer a hydrogen to the surface, forming an OH group and liberating HI. This step is critical in the hydroxylation of the surface, enabling further reactions and restoring reactive −OH sites for subsequent ALD cycles.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Lewis acid/base interaction between Ti and O, Formation of the adsorbed complex, Initial positioning of H₂O for subsequent bond formation and breaking\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_12.jpg","caption":"Figure 12. Stationary points for reaction $\\mathrm{F}$ calculated using B3LYP/6-31G(d,p): (a) adsorption equilibrium state, (b) transition state. Distances are shown in angstroms.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_12","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":675,"height":414,"image_format":"jpeg","image_sha256":"e4116ae109af54e2a21c721fec2859c8acc2e867e65e43284e91ed59e5d7876a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":3,"width":326,"height":363},{"panel_id":"b","x":351,"y":4,"width":322,"height":361}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Adsorption equilibrium state for reaction F on the SiO₂ surface, showing TiI₄ coordinating to the oxygen bridge via a Lewis acid/base interaction with a Ti−O distance of 1.75 Å.\"},{\"panel_id\":\"b\",\"text\":\"Transition state for reaction F on the SiO₂ surface, showing a shortened Ti−O bond (1.90 Å), partial breaking of the Ti−I1 bond (3.03 Å), partial formation of the Si−I1 bond (2.69 Å), and partial breaking of the Si−O bond (2.07 Å). Delocalization interactions between I lone pairs and Ti antibonding orbitals are also present, with an activation barrier of 15.7 kcal/mol and a reaction enthalpy of −23.3 kcal/mol.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Atoms|Bond Lengths (Å)|\\n|-----|----------------|\\n|Ti-O|1.75|\\n|Ti-Si|2.64|\\n|Si-O|2.22|\\n|O-Si|2.69|\\n|Si-O-H|2.22|\\n|Si-O-H|3.03|\"},{\"panel_id\":\"b\",\"text\":\"|Atoms|Bond Lengths (Å)|\\n|-----|----------------|\\n|Ti-O|1.90|\\n|Ti-I1|3.03|\\n|Ti-I2/I3|2.91 (approx.)|\\n|Ti-I4|2.95 (approx.)|\\n|Si-O|2.07|\\n|Si-I1|2.69|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The reaction involves a transition state where key bonds are partially broken or formed.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Ti−O bond decreases from 2.22 Å in the adsorption state to 1.90 Å in the transition state.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the transition state, delocalization occurs from the lone pair of I1 to the unfilled σTi-I4* antibonding orbital, stabilizing the system. This electronic redistribution partially weakens the Ti−I1 bond while slightly lengthening Ti−I4. These interactions, combined with partial bond formation between Si and I1 and partial bond breaking of Si−O, result in a ZPE-including activation barrier of 15.7 kcal/mol. The strong bonding and electronic stabilization in the final product make it significantly more stable than the adsorption state, with a reaction enthalpy of −23.3 kcal/mol.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ti−O: shortened to 1.90 Å, Ti−I1: partially broken, 3.03 Å, Ti−I4: slightly lengthened, Si−O: partially broken, 2.07 Å, Si−I1: partially formed, 2.69 Å\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_14.jpg","caption":"Figure 14. ZPE-corrected PES for the iodine release reaction: (a) reactant, (b) transition state, and (c) product-like adsorption equilibrium state. Distances are shown in angstroms.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_14","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_14","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_14.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1280,"height":1353,"image_format":"jpeg","image_sha256":"b5487f589d38078428b16ca27011a3aee0ae0213bf14428b3dce4a6335a47054","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":426,"y":779,"width":445,"height":351},{"panel_id":"b","x":280,"y":7,"width":441,"height":370},{"panel_id":"c","x":903,"y":662,"width":374,"height":547},{"panel_id":"d","x":6,"y":398,"width":1273,"height":953}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Reactant state for the iodine release reaction, showing two adjacent −TiI₃ species on the surface.\"},{\"panel_id\":\"b\",\"text\":\"Transition state, where Ti1−Ti2 bonding begins, the Ti1−I2 bond is broken, and the Ti2−I4 bond is partially broken. The Ti coordination geometry changes from tetrahedral to trigonal bipyramidal.\"},{\"panel_id\":\"c\",\"text\":\"Product-like adsorption equilibrium, showing formation of an I₂ molecule (I2−I4) and lengthened Ti−I bonds due to Ti rehybridization. The reaction is strongly endothermic (57.8 kcal/mol) with a high activation barrier (61.9 kcal/mol).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Atom Pair|Bond Length (Å)|\\n|---------|---------------|\\n|Ti1−Ti2|3.28|\\n|Ti1−I2|3.14|\\n|Ti2−I4|2.80|\"},{\"panel_id\":\"b\",\"text\":\"|Atom Pair|Bond Length (Å)|\\n|---------|---------------|\\n|Ti1−Ti2|3.28|\\n|Ti1−I2|3.14|\\n|Ti2−I4|2.80|\"},{\"panel_id\":\"c\",\"text\":\"|Atom Pair|Bond Length (Å)|\\n|---------|---------------|\\n|Ti−I bonds|All longer than in reactant|\\n|I2−I4|Formed as I2 molecule|\"},{\"panel_id\":\"d\",\"text\":\"|Reaction Coordinate|Relative Energy (kcal/mol)|\\n|-------------------|--------------------------|\\n|Reactant|0.0|\\n|Transition State|61.9|\\n|Product|57.8|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. During the transition state, the coordination geometry of Ti changes from tetrahedral to trigonal bipyramidal.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"All Ti−I bond lengths increase in the product state compared to the reactant due to Ti rehybridization and decreased electron density between Ti and I atoms.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reaction is strongly endothermic by 57.8 kcal/mol, and the activation barrier is very high at 61.9 kcal/mol. This indicates that a significant input of energy is required for the reaction to occur, making it kinetically slow under typical conditions. In the context of atomic layer deposition (ALD), this suggests that the reaction would likely require elevated temperatures or other activation strategies to proceed efficiently, and the rate-limiting step could impact the overall process throughput.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Formation of a Ti1−Ti2 bonding interaction (Ti−Ti distance = 3.28 Å), Breakage of the Ti1−I2 bond (distance = 3.14 Å), Partial breakage of the Ti2−I4 bond (distance = 2.80 Å), Change in Ti coordination geometry from tetrahedral to trigonal bipyramidal\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_15.jpg","caption":"Figure 15. HOMO orbitals of stationary points for the iodine release reaction: (a) transition state, (b) product-like adsorption equilibrium state.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_15","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_15","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_15.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":628,"height":1361,"image_format":"jpeg","image_sha256":"1127bca5fb6fb496d0047b03d6bd7f2667506c3621c8a4d306c172390232380f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":40,"width":619,"height":602},{"panel_id":"b","x":4,"y":648,"width":618,"height":707}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"HOMO orbitals at the transition state for the iodine release reaction, showing Ti1−Ti2 bonding interaction via sd orbital overlap, partial cleavage of Ti−I bonds, and a change in Ti coordination geometry from tetrahedral to trigonal bipyramidal.\"},{\"panel_id\":\"b\",\"text\":\"HOMO orbitals at the product-like adsorption equilibrium, showing formation of the I₂ molecule, lengthened Ti−I bonds, and stabilization through enhanced overlap between I p orbitals and Ti sd orbitals.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Orbital Feature|Description|\\n|---------------|-----------|\\n|Transition State|Ti1−Ti2 bonding interaction observed due to sd orbital overlap; Ti1−I2 bond 3.14 Å; Ti2−I4 bond 2.80 Å; Ti coordination geometry changes from tetrahedral to trigonal bipyramidal.|\"},{\"panel_id\":\"b\",\"text\":\"|Orbital Feature|Description|\\n|---------------|-----------|\\n|Product-like Adsorption Equilibrium|I2 and I4 form I2 molecule; all Ti−I bonds longer than in reactant due to Ti rehybridization; structure stabilized by increased overlap between I p orbitals and Ti sd orbitals.|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The HOMO orbital analysis shows that the Ti1−Ti2 bonding interaction is formed due to the overlap of their sd orbitals in the transition state.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Ti−I bonds become longer in the product-like state compared to the transition state, reflecting rehybridization of Ti and stabilization of the iodine molecule.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The HOMO orbital distribution shows where electron density is concentrated during the transition state and product formation. In the transition state, the Ti−Ti bonding interaction and partial Ti−I bond cleavage indicate electron redistribution necessary to form I2. In the product, the extended Ti−I bond lengths and stabilized overlap with I p orbitals explain why the reaction is endothermic (57.8 kcal/mol) and has a high activation barrier (61.9 kcal/mol). This orbital insight helps rationalize the slow kinetics and strong energy requirements observed experimentally, supporting the mechanistic understanding of iodine release during ALD.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ti coordination geometry changes from tetrahedral to trigonal bipyramidal in the transition state, Ti−Ti bonding forms in the transition state, Partial cleavage of Ti−I bonds in the transition state, I₂ molecule formation in the product state, Ti−I bonds lengthen in the product state, Enhanced overlap between I p orbitals and Ti sd orbitals in the product\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_2.jpg","caption":"Figure 2. $(\\mathrm{SiH}_3\\mathrm{O})_3\\mathrm{Si} - \\mathrm{OH}^*$ cluster model used in ONIOM calculations. The atoms appearing as spheres are treated with a high-level model chemistry, whereas the remaining atoms are approximated with HF/6-31G(d,p).","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":197,"height":150,"image_format":"jpeg","image_sha256":"dd73f7986191f8f564f699b91962ffe254b932452f3779c36099b6a5bb442d6c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":197,"height":150}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 2 illustrates the (SiH₃O)₃Si–OH* cluster model used in ONIOM calculations. The cluster is partitioned into two regions: the substrate atoms and the TiCl₄ precursor, which are treated with high-level model chemistries (B3LYP/6-311++G(2df,2p), MP2/6-311++G(2df,2p), or CCSD(T)/6-311++G(2df,2p)) due to their critical role in reaction energetics, and the remaining atoms, which are approximated using the less-expensive HF/6-31G(d,p) method. The figure highlights the spheres representing the high-level region, indicating the focus area for energy calculations in the ONIOM method. This model was employed to validate theoretical approaches for predicting reaction energies.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Region|Treatment|Notes|\\n|------|---------|-----|\\n|Substrate atoms and TiCl4 precursor|High-level model chemistry (B3LYP/6-311++G(2df,2p), MP2/6-311++G(2df,2p), or CCSD(T)/6-311++G(2df,2p))|Crucial for reaction energetics; spheres in the figure|\\n|Remaining atoms|Low-level HF/6-31G(d,p)|Approximated for computational efficiency|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"B3LYP/6-311++G(2df,2p), MP2/6-311++G(2df,2p), and CCSD(T)/6-311++G(2df,2p).\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ONIOM model allows selective application of computationally expensive high-level methods to the atoms that are most critical for reaction energetics, such as the substrate and TiCl₄ precursor. By approximating the remaining atoms at a lower level, the method reduces computational cost without sacrificing accuracy in the key reaction region. This approach ensures reliable predictions of adsorption and reaction energies, guiding the understanding of reaction mechanisms and informing subsequent computational or experimental studies in ALD TiO₂ deposition.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Substrate atoms and TiCl₄ precursor treated at high-level model chemistry, Remaining atoms treated with low-level HF/6-31G(d,p), Spheres indicate the high-level region, Used to evaluate reaction energetics in the ALD process, Provides computational efficiency while maintaining accuracy\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_4.jpg","caption":"Figure 4. Stationary points for the $(\\mathrm{SiH}_3\\mathrm{O})_3\\mathrm{Si} - \\mathrm{OH}^* + \\mathrm{TiI}_4$ reaction calculated using B3LYP/6-31G(d,p): (a) adsorption equilibrium state, (b) transition state. Distances are shown in angstroms.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_4","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":664,"height":417,"image_format":"jpeg","image_sha256":"5c0cf459be97eb227f70563064e15518ac6c2fa9b954ad74433f6c9c5c0adcb6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":5,"width":327,"height":362},{"panel_id":"b","x":351,"y":10,"width":312,"height":351}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Adsorption equilibrium state for the (SiH₃O)₃Si–OH* + TiI₄ reaction, showing Ti coordinated to O with a bond length of 2.27 Å and Ti–I distance of 2.66 Å.\"},{\"panel_id\":\"b\",\"text\":\"Transition state for the reaction, showing Ti–O distance decreased to 1.90 Å, Ti–I bond largely broken at 3.58 Å, partial formation of H–I bond at 1.95 Å, and full breaking of the O–H bond, capturing the evolution of bonding along the reaction pathway.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Bond|Distance (Å)|\\n|----|------------|\\n|Ti-O|2.27|\\n|Ti-I|2.66|\\n|H-I|—|\\n|O-H|—|\"},{\"panel_id\":\"b\",\"text\":\"|Bond|Distance (Å)|\\n|----|------------|\\n|Ti-O|1.90|\\n|Ti-I|3.58|\\n|H-I|1.95|\\n|O-H|broken|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Ti–O bond shortens from 2.27 Å in the adsorption state to 1.90 Å in the transition state, indicating stronger coordination as the reaction progresses.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The bond distance changes in the transition state reflect the key interactions driving the reaction, such as Ti coordination to O, partial H–I formation, and O–H bond cleavage. These structural insights allow accurate computation of the ZPE-corrected activation barrier (13.5 kcal/mol) and reaction exothermicity (9.4 kcal/mol). They also inform NBO analysis and mechanistic modeling, including the identification of electron delocalization effects that stabilize the transition state and affect the rate constants for the surface reaction. This detailed structural information is critical for predicting reaction kinetics and optimizing ALD processes.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ti–O: 2.27 Å → 1.90 Å (shortens), Ti–I: 2.66 Å → 3.58 Å (elongates, nearly broken), H–I: not formed → 1.95 Å (partial bond formation), O–H: intact → broken\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_6.jpg","caption":"Figure 6. Stationary points for the $(\\mathrm{SiH}_3\\mathrm{O})_3\\mathrm{Si - O - TiI}_3^* + \\mathrm{H}_2\\mathrm{O}$ reaction calculated using B3LYP/6-31G(d,p): (a) adsorption equilibrium state, and (b) transition state. Distances are shown in angstroms.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_6","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":667,"height":408,"image_format":"jpeg","image_sha256":"ff8dbab2f2f6375478aedc83581380c6dad76c500ac8efdacc4e7eec548a0fc5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":4,"width":320,"height":367},{"panel_id":"b","x":335,"y":12,"width":329,"height":367}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Adsorption equilibrium state for the (SiH₃O)₃Si–O–TiI₃* + H₂O reaction, showing H₂O binding to the apical site of the −TiI₃ group, stabilized by lone pair donation from oxygen to titanium, with a 0 K adsorption heat of 6.2 kcal/mol.\"},{\"panel_id\":\"b\",\"text\":\"Transition state for the reaction, showing Ti–O bond at 1.95 Å, Ti–I bond broken (3.88 Å), partial formation of the H–I bond, an activation barrier of 20.3 kcal/mol, and slight exothermicity of 0.2 kcal/mol.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Atom Pair|Bond Length (Å)|Notes|\\n|---------|---------------|-----|\\n|Ti - O1|1.95|Adsorption of H2O at apical site of -TiI3 group|\\n|Ti - I|3.88|Bond length increased in adsorption state|\\n|O lone pair → Ti-O*|67.44 kcal/mol|Stabilization energy from NBO donation|\\n|H2O charge|+0.1 e|Charge transfer from O to Ti|\\n|ΔH_adsorption|6.2 kcal/mol|Heat of adsorption at 0 K|\"},{\"panel_id\":\"b\",\"text\":\"|Atom Pair|Bond Length (Å)|Notes|\\n|---------|---------------|-----|\\n|Ti - O (H2O)|1.95|Bonding in transition state|\\n|Ti - I|3.88|Bond broken in transition state|\\n|O lone pair → H-I*|Partial delocalization|Indicates partial O-H bond breakage and H-I formation|\\n|ΔH_reaction|0.2 kcal/mol|Slightly exothermic at 0 K|\\n|Activation Barrier|20.3 kcal/mol|From adsorption to transition state|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It decreases from the adsorption equilibrium state to 1.95 Å in the transition state.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding the adsorption and transition state energetics helps predict the activation barriers and exothermicity of surface reactions. For ALD process design, this information guides the choice of temperature and exposure times to ensure efficient surface hydroxyl regeneration, minimize undesired side reactions, and optimize precursor dosing. It also allows estimation of rate constants for kinetic modeling of the full deposition cycle.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"H₂O binds to the apical site of -TiI₃, Lone pair donation from oxygen to Ti stabilizes the adsorption complex (67.44 kcal/mol), Charge transfer from H₂O to Ti (+0.1 e), Coordination geometry changes from tetrahedral to trigonal bipyramidal, Ti–I bond elongates to 3.88 Å in the transition state, Partial formation of H–I bond, O–H bond partially breaks in the transition state\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_9.jpg","caption":"Figure 9. Stationary points for the first half-reactions taking place on the adjacent hydrogen-bonded hydroxyl groups calculated using B3LYP/6-31G- $(\\mathrm{d},\\mathrm{p})$ a adsorption equilibrium state on the top site of a single hydroxyl group, (b) adsorption equilibrium state on the bridge site of adjacent hydroxyl groups, (c) transition state for reaction C, and (d) transition state for reaction D. For clarity, only reactive site of the $\\mathrm{SiO_2}$ substrate is shown. Distances are shown in angstroms.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_9","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":661,"height":786,"image_format":"jpeg","image_sha256":"7736d76d988a8a4325a5936a8c58af6657bc4b92bf54e5cfc7ea829bf5b58547","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":339,"height":328},{"panel_id":"b","x":364,"y":8,"width":281,"height":324},{"panel_id":"c","x":13,"y":395,"width":298,"height":318},{"panel_id":"d","x":338,"y":400,"width":322,"height":340}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Adsorption equilibrium state of TiI₄ on the top site of an adjacent hydroxyl group, showing Ti interacting with O and H atoms of the surface, including Si from the substrate, and a weak hydrogen bond between hydroxyls.\"},{\"panel_id\":\"b\",\"text\":\"Bridge-site adsorption state of TiI₄ on adjacent hydroxyl groups, showing Ti in 6-fold coordination with surface oxygens, indicating an octahedral-like geometry.\"},{\"panel_id\":\"c\",\"text\":\"Transition state for reaction C, showing partial breaking of the Ti−I bond (3.85 Å), formation of the Ti−O bond (1.95 Å), and partial formation of the H−I bond.\"},{\"panel_id\":\"d\",\"text\":\"Transition state for reaction D, showing elongated Ti−I and H−O bonds and a shortened Ti−O bond, indicating progression toward HI formation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Element|Color|\\n|-------|-----|\\n|Ti|Gray|\\n|O|Red|\\n|Si|Cyan|\\n|H|White|\"},{\"panel_id\":\"b\",\"text\":\"|Element|Color|\\n|-------|-----|\\n|Ti|Gray|\\n|O|Red|\\n|Si|Cyan|\\n|H|White|\"},{\"panel_id\":\"c\",\"text\":\"|Element|Color|\\n|-------|-----|\\n|Ti|Gray|\\n|O|Red|\\n|H|White|\\n|I|Purple|\"},{\"panel_id\":\"d\",\"text\":\"|Element|Color|\\n|-------|-----|\\n|Ti|Gray|\\n|O|Red|\\n|H|White|\\n|I|Purple|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The activation barrier for reaction C is 12.7 kcal/mol, while for reaction D it is 14.7 kcal/mol. Reaction D has a slightly higher barrier.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The adsorption states show that TiI₄ prefers the bridge site of adjacent hydroxyls, providing a more stable complex and enabling efficient electron donation from surface oxygens to Ti. Understanding the transition states for reactions C and D helps predict the energy barriers for HI release, allowing optimization of ALD conditions such as temperature and precursor exposure to ensure complete reactions and controlled surface coverage. This mechanistic insight is critical for tuning film growth rates and surface functionality.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Reaction C (TS): Ti−I bond breaks to 3.85 Å; Ti−O bond shortens to 1.95 Å; H−I distance decreases to 1.94 Å, Reaction D (TS): Ti−I and H−O bonds lengthen; Ti−O bond shortens, reflecting HI formation\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_16_figure_1.jpg","caption":"Figure 1. Cluster models to mimic the active sites on the $\\mathrm{HfO_2}$ surface during $\\mathrm{HfO_2}$ ALD. (a) $\\mathrm{Hf(OH)_3 - OH}$ b $\\mathrm{Hf(OH)_3 - OEt}$ and (c) $\\mathrm{Hf(OH)_3 - Cl}$","id":"test/atomic-layer-deposition/simulation-usecase/16/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/16/figure_1","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/Collin Mui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":666,"height":308,"image_format":"jpeg","image_sha256":"03309737da5c7fe27356589df7190f1f8711898cf8e72cd0778c45f243cc455b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":61,"width":186,"height":247},{"panel_id":"b","x":230,"y":9,"width":210,"height":298},{"panel_id":"c","x":462,"y":93,"width":202,"height":216}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_2.jpg","caption":"Fig. 2. Reduced cluster models of surface Ga and surface N (top figures), and larger cluster model used for surface Ga to examine the validity of the reduced cluster model.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":589,"height":606,"image_format":"jpeg","image_sha256":"ee00afa5fe960d5939c405c08f181755137fde9ef463f4d42aeb0178731ea11d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":2,"width":584,"height":244},{"panel_id":"b","x":6,"y":248,"width":584,"height":356}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_3.jpg","caption":"Fig. 3. Molecular representation of the surface reactions that have been considered for GaN deposition. The structures are views along the (100) surface similar to that shown in Ref. [25] for GaAs.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_3","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1181,"height":1233,"image_format":"jpeg","image_sha256":"0ae17cd9025ee68704ac760181731c5f303b4ed2cd668ad066a1c9814e73fb05","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":1171,"height":1236}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_21_fig_1.jpg","caption":"FIG. 1. (Color online) Optimized structures for the possible precursors for ALD of SiC performed in TURBOMOLE with PBE functional. (a) methane $\\mathrm{(CH_4)}$ b ethane $(\\mathrm{C}_2\\mathrm{H}_6)$ c propane $(\\mathrm{CH_8})$ d $n$ -butane $(\\mathrm{C_4H_{10}})$ e $n$ -hexane $(\\mathrm{C_6H_{14}})$ f ethylene $(\\mathrm{C}_2\\mathrm{H}_4)$ g propene $(\\mathrm{C}_3\\mathrm{H}_6)$ h-2-butene $(\\mathrm{C_4H_8})$ i ethyne $(\\mathrm{C}_2\\mathrm{H}_2)$ j propyne $(\\mathrm{C}_3\\mathrm{H}_4)$ k carbontetrachloride $(\\mathrm{CCl}_4)$ (l iodomethane $(\\mathrm{CH}_3\\mathrm{I})$ m trichloromethane $(\\mathrm{CHCl}_3)$ n chloromethane $(\\mathrm{CH}_3\\mathrm{Cl})$ o disilane $\\mathrm{(Si_2H_6)}$ p silane $\\mathrm{(SiH_4)}$ q monochlorosilane $\\mathrm{(SiH_3Cl)}$ rDCS, (s) TCS, (t hexachlorodisilane $\\mathrm{(Si_2Cl_6)}$ uTET, (v tetrafluorosilane $\\mathrm{(SiF_4)}$ w dichlorosilacyclobutane $\\mathrm{[SiCl_2(CH_2)_3]}$ x dimethyldichlorosilane $\\mathrm{[Si(CH_3)_2Cl_2]}$ y bis(trichlorosilyl)methane $\\mathrm{[SiCl_3)_2CH_2]}$ z methylsilane $(\\mathrm{CH}_3\\mathrm{-SiH}_3)$ aa1,3- disilabutane $\\mathrm{(SiH_3 - CH_2 - SiH_2 - CH_2)}$ (bb) silacyclobutane $\\mathrm{[SiH_2(CH_2)_3]}$ co) maethylorthosilicate $\\mathrm{Si(OEt)_4}$ ddDIPAS, (ee) bis(diethylamino)silane $\\mathrm{H}_2\\mathrm{Si}[\\mathrm{N}(\\mathrm{Et})_2]_2$ and (ff) MTS. (Et)-ethyl group $\\mathrm{^{\\circ}CH_{2} - ^{\\circ}CH_{3}}$ (iPr)-iso-propyl group $\\mathrm{-CH_2 - CH_2 - CH_3}$","id":"test/atomic-layer-deposition/simulation-usecase/21/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/21/fig_1","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"},{"panel_id":"h","label":"molecular structure diagram"},{"panel_id":"i","label":"molecular structure diagram"},{"panel_id":"j","label":"molecular structure diagram"},{"panel_id":"k","label":"molecular structure diagram"},{"panel_id":"l","label":"molecular structure diagram"},{"panel_id":"m","label":"molecular structure diagram"},{"panel_id":"n","label":"molecular structure diagram"},{"panel_id":"o","label":"molecular structure diagram"},{"panel_id":"p","label":"molecular structure diagram"},{"panel_id":"q","label":"molecular structure diagram"},{"panel_id":"r","label":"molecular structure diagram"},{"panel_id":"s","label":"molecular structure diagram"},{"panel_id":"t","label":"molecular structure diagram"},{"panel_id":"u","label":"molecular structure diagram"},{"panel_id":"v","label":"molecular structure diagram"},{"panel_id":"w","label":"molecular structure diagram"},{"panel_id":"x","label":"molecular structure diagram"},{"panel_id":"y","label":"molecular structure diagram"},{"panel_id":"z","label":"molecular structure diagram"},{"panel_id":"aa","label":"molecular structure diagram"},{"panel_id":"bb","label":"molecular structure diagram"},{"panel_id":"cc","label":"molecular structure diagram"},{"panel_id":"dd","label":"molecular structure diagram"},{"panel_id":"ee","label":"molecular structure diagram"},{"panel_id":"ff","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/21/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/21/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/21/Ekaterina A. Filatova et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":983,"height":1234,"image_format":"jpeg","image_sha256":"1799078d8b15d5d467359b47d1836ec821cfd29e32bb6b36447a6c54053db774","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":70,"y":13,"width":181,"height":118},{"panel_id":"b","x":259,"y":11,"width":151,"height":109},{"panel_id":"c","x":422,"y":18,"width":182,"height":124},{"panel_id":"d","x":662,"y":18,"width":235,"height":126},{"panel_id":"e","x":0,"y":172,"width":318,"height":124},{"panel_id":"f","x":340,"y":138,"width":111,"height":163},{"panel_id":"g","x":465,"y":172,"width":161,"height":114},{"panel_id":"h","x":646,"y":176,"width":183,"height":128},{"panel_id":"i","x":826,"y":211,"width":157,"height":88},{"panel_id":"j","x":55,"y":364,"width":167,"height":89},{"panel_id":"k","x":241,"y":340,"width":129,"height":103},{"panel_id":"l","x":394,"y":358,"width":111,"height":112},{"panel_id":"m","x":529,"y":342,"width":135,"height":127},{"panel_id":"n","x":634,"y":499,"width":186,"height":141},{"panel_id":"o","x":817,"y":336,"width":161,"height":138},{"panel_id":"p","x":43,"y":508,"width":127,"height":104},{"panel_id":"q","x":838,"y":495,"width":145,"height":121},{"panel_id":"r","x":191,"y":522,"width":159,"height":101},{"panel_id":"s","x":317,"y":521,"width":133,"height":121},{"panel_id":"t","x":470,"y":518,"width":138,"height":127},{"panel_id":"u","x":63,"y":688,"width":123,"height":106},{"panel_id":"v","x":225,"y":670,"width":234,"height":192},{"panel_id":"w","x":468,"y":662,"width":209,"height":140},{"panel_id":"x","x":706,"y":658,"width":246,"height":134},{"panel_id":"y","x":13,"y":869,"width":206,"height":105},{"panel_id":"z","x":225,"y":866,"width":265,"height":114},{"panel_id":"aa","x":372,"y":834,"width":306,"height":184},{"panel_id":"bb","x":495,"y":834,"width":175,"height":193},{"panel_id":"cc","x":681,"y":813,"width":286,"height":249},{"panel_id":"dd","x":60,"y":1000,"width":267,"height":231},{"panel_id":"ee","x":351,"y":1026,"width":342,"height":201},{"panel_id":"ff","x":749,"y":1063,"width":206,"height":152}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Optimized molecular structure of methane (CH₄) used as a reference hydrocarbon precursor for SiC ALD.\"},{\"panel_id\":\"b\",\"text\":\"Optimized molecular structure of ethane (C₂H₆), a simple hydrocarbon considered for ALD studies.\"},{\"panel_id\":\"c\",\"text\":\"Optimized molecular structure of propane (C₃H₈), illustrating hydrocarbon geometry relevant to precursor evaluation.\"},{\"panel_id\":\"d\",\"text\":\"Optimized molecular structure of butane (C₄H₁₀), included as a simple carbon precursor for SiC ALD.\"},{\"panel_id\":\"e\",\"text\":\"Optimized molecular structure of pentane (C₅H₁₂), demonstrating hydrocarbon precursor geometry.\"},{\"panel_id\":\"f\",\"text\":\"Optimized molecular structure of hexane (C₆H₁₄), representing extended-chain hydrocarbons for ALD modeling.\"},{\"panel_id\":\"g\",\"text\":\"Optimized molecular structure of ethylene (C₂H₄), an alkene hydrocarbon evaluated as a precursor.\"},{\"panel_id\":\"h\",\"text\":\"Optimized molecular structure of propylene (C₃H₆), showing double-bond geometry relevant for ALD.\"},{\"panel_id\":\"i\",\"text\":\"Optimized molecular structure of 1-butyne (C₄H₆), an alkyne hydrocarbon considered for precursor reactivity.\"},{\"panel_id\":\"j\",\"text\":\"Optimized molecular structure of 2-butyne (C₄H₆), illustrating triple-bond geometry for ALD modeling.\"},{\"panel_id\":\"k\",\"text\":\"Optimized molecular structure of chloromethane (CH₃Cl), a halogenated carbon precursor.\"},{\"panel_id\":\"l\",\"text\":\"Optimized molecular structure of dichloromethane (CH₂Cl₂), showing halogen substitution effects on ALD reactivity.\"},{\"panel_id\":\"m\",\"text\":\"Optimized molecular structure of trichloromethane (CHCl₃), included to assess halogenated precursor behavior.\"},{\"panel_id\":\"n\",\"text\":\"Optimized molecular structure of tetrachloromethane (CCl₄), a fully halogenated carbon precursor.\"},{\"panel_id\":\"o\",\"text\":\"Optimized molecular structure of silane (SiH₄), a silicon hydride precursor for ALD.\"},{\"panel_id\":\"p\",\"text\":\"Optimized molecular structure of disilane (Si₂H₆), showing extended silicon hydride geometry.\"},{\"panel_id\":\"q\",\"text\":\"Optimized molecular structure of trisilane (Si₃H₈), included as a higher-order silicon hydride precursor.\"},{\"panel_id\":\"r\",\"text\":\"Optimized molecular structure of chlorosilane (SiH₃Cl), illustrating halogenated silicon species for ALD.\"},{\"panel_id\":\"s\",\"text\":\"Optimized molecular structure of dichlorosilane (SiH₂Cl₂), showing substitution effects on reactivity.\"},{\"panel_id\":\"t\",\"text\":\"Optimized molecular structure of trichlorosilane (SiHCl₃), a silicon precursor with increased halogenation.\"},{\"panel_id\":\"u\",\"text\":\"Optimized molecular structure of tetrachlorosilane, a silicon precursor with increased halogenation.\"},{\"panel_id\":\"v\",\"text\":\"Optimized molecular structure of fluorosilane (SiH₃F), representing fluorine-substituted silicon precursors.\"},{\"panel_id\":\"w\",\"text\":\"Optimized molecular structure of difluorosilane (SiH₂F₂), illustrating fluorinated silicon species for ALD.\"},{\"panel_id\":\"x\",\"text\":\"Optimized molecular structure of trifluorosilane (SiHF₃), showing higher fluorination on silicon.\"},{\"panel_id\":\"y\",\"text\":\"Optimized molecular structure of cyclic silane (Si₄H₈), representing ring-structured silicon precursors.\"},{\"panel_id\":\"z\",\"text\":\"Optimized molecular structure of cyclic silane (Si₆H₁₂), showing larger ring geometries relevant for ALD.\"},{\"panel_id\":\"aa\",\"text\":\"Optimized molecular structure of methyl-substituted silane (SiH₃CH₃), illustrating alkyl-functionalized silicon precursors.\"},{\"panel_id\":\"bb\",\"text\":\"Optimized molecular structure of ethyl-substituted silane (SiH₃C₂H₅), showing extended alkyl substitution.\"},{\"panel_id\":\"cc\",\"text\":\"Optimized molecular structure of amino-silicon precursor (SiH₃NH₂), highlighting nitrogen functionalization.\"},{\"panel_id\":\"dd\",\"text\":\"Optimized molecular structure of alkoxy-silicon precursor (SiH₃OCH₃), illustrating oxygen-containing ligands.\"},{\"panel_id\":\"ee\",\"text\":\"Optimized molecular structure of dimethyl-substituted silane (SiH₂(CH₃)₂), showing multiple alkyl groups on silicon.\"},{\"panel_id\":\"ff\",\"text\":\"Optimized molecular structure of trimethylsilane (SiH(CH₃)₃), illustrating fully substituted alkyl silicon precursor for ALD.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"},{\"panel_id\":\"h\",\"text\":\"\"},{\"panel_id\":\"i\",\"text\":\"\"},{\"panel_id\":\"j\",\"text\":\"\"},{\"panel_id\":\"k\",\"text\":\"\"},{\"panel_id\":\"l\",\"text\":\"\"},{\"panel_id\":\"m\",\"text\":\"\"},{\"panel_id\":\"n\",\"text\":\"\"},{\"panel_id\":\"o\",\"text\":\"\"},{\"panel_id\":\"p\",\"text\":\"\"},{\"panel_id\":\"q\",\"text\":\"\"},{\"panel_id\":\"r\",\"text\":\"\"},{\"panel_id\":\"s\",\"text\":\"\"},{\"panel_id\":\"t\",\"text\":\"\"},{\"panel_id\":\"u\",\"text\":\"\"},{\"panel_id\":\"v\",\"text\":\"\"},{\"panel_id\":\"w\",\"text\":\"\"},{\"panel_id\":\"x\",\"text\":\"\"},{\"panel_id\":\"y\",\"text\":\"\"},{\"panel_id\":\"z\",\"text\":\"\"},{\"panel_id\":\"aa\",\"text\":\"\"},{\"panel_id\":\"bb\",\"text\":\"\"},{\"panel_id\":\"cc\",\"text\":\"\"},{\"panel_id\":\"dd\",\"text\":\"\"},{\"panel_id\":\"ee\",\"text\":\"\"},{\"panel_id\":\"ff\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Modeling a wide variety of precursor structures allows researchers to assess how different bonding environments, functional groups, and molecular sizes influence reaction energetics and thermodynamic feasibility for SiC formation. Since ALD relies on self-limiting surface reactions at relatively low temperatures, precursor chemistry plays a critical role in determining growth behavior. By comparing diverse molecules computationally, promising precursors can be identified efficiently before experimental validation, reducing trial-and-error and guiding the development of optimized ALD processes.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Saturated hydrocarbons (alkanes), Unsaturated hydrocarbons (alkenes and alkynes), Halogenated carbon compounds, Silicon hydrides, Chlorosilanes and fluorosilanes, Cyclic silicon-containing molecules, Alkyl-substituted silanes, Alkoxy- and amino-silicon precursors\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Hydrocarbon precursors contain only C and H atoms, while halogenated and silicon-containing precursors include Si–X (X = H, Cl, F) or C–X bonds that introduce higher reactivity and different thermodynamic behavior relevant to ALD processes.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_22_figure_1.jpg","caption":"Figure 1. Example of a DFT-calculated adsorption configuration of an aniline molecule shown in the (a) side view and (b and c) top view (gray, surface metal atoms; yellow, carbon; white, hydrogen; and blue, nitrogen). (c) Top layer metal atoms have been used to form the surface model. (d) Disks representing N, C, and H atoms have been placed on the corresponding coordinates for aniline based on their van der Waals radius. (e) Final 2D aniline footprint as input for the RSA simulations has been created as the combination of the disks into a single shape (a union). (f) Section of the substrate with adsorbed molecules as output of the RSA simulation.","id":"test/atomic-layer-deposition/simulation-usecase/22/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/22/figure_1","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/I. Tezsevin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":619,"height":833,"image_format":"jpeg","image_sha256":"36474ae5d91ef4e1d174633c76c508fd667835b729863727e42381fa93f7e1ac","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":11,"y":40,"width":293,"height":232},{"panel_id":"b","x":322,"y":36,"width":292,"height":234},{"panel_id":"c","x":10,"y":312,"width":297,"height":229},{"panel_id":"d","x":320,"y":287,"width":295,"height":262},{"panel_id":"e","x":14,"y":566,"width":290,"height":257},{"panel_id":"f","x":321,"y":566,"width":296,"height":263}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows a DFT-calculated side view of an aniline molecule adsorbed flat on a metal surface, highlighting the atomic positions (C, N, H) relative to the top-layer metal atoms.\"},{\"panel_id\":\"b\",\"text\":\"provides a top view of the same adsorption geometry, showing how the aromatic ring aligns with the metal lattice, illustrating adsorption orientation and registry.\"},{\"panel_id\":\"c\",\"text\":\"displays only the top layer metal atoms extracted from the original DFT structure to create a simplified 2D surface grid for RSA modeling.\"},{\"panel_id\":\"d\",\"text\":\"shows overlapping van der Waals spheres of each atom (C, N, H), whose union forms the molecular footprint used to determine steric blocking for RSA adsorbate packing simulations.\"},{\"panel_id\":\"e\",\"text\":\"presents the final 2D molecular footprint shape, derived from atomic overlaps, which represents the exclusion zone an aniline molecule occupies on the surface.\"},{\"panel_id\":\"f\",\"text\":\"shows a Random Sequential Adsorption (RSA) simulation, where multiple aniline footprints are placed across the surface, demonstrating molecular crowding and surface coverage behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The footprint defines how much surface area each aniline molecule occupies, controlling steric blocking during adsorption. In RSA simulations, this footprint determines the maximum achievable surface coverage and molecular arrangement, allowing realistic modeling of adsorption density and spatial distribution as shown in panel (f).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Panel (d) replaces atomic models with van der Waals disks, whereas panels (a–c) use ball-and-stick structural representations.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes — the footprint is generated by combining van der Waals disks of each atom to form a single union shape.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"N atom van der Waals radius, C atom van der Waals radii, H atom van der Waals radii, Molecular orientation on the surface\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_22_figure_2.jpg","caption":"Figure 2. DFT-optimized aniline adsorption configurations and energies on (a) $\\mathrm{Ru}(0001)$ and (b) $\\mathrm{Co}(0001)$ surfaces representing the non-growth areas and (c) $\\mathrm{SiO}_2(0001)$ surface representing the growth area. The top layer metals are represented in a different color for better top view visualization.","id":"test/atomic-layer-deposition/simulation-usecase/22/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/22/figure_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/I. Tezsevin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":614,"height":1389,"image_format":"jpeg","image_sha256":"42ced8ee46e0df34b78b92cbb44797521e24a9cbb9b8fbb593fba055d452ad40","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":7,"width":602,"height":472},{"panel_id":"b","x":5,"y":490,"width":606,"height":460},{"panel_id":"c","x":3,"y":977,"width":609,"height":411}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows three DFT-optimized adsorption geometries of aniline on Ru(0001) in vertical and two horizontal orientations, with both top-view and side-view visualizations. Adsorption energies show strongest binding for horizontal configurations (up to −3.59 eV), highlighting the strong interaction between aniline and the Ru surface.\"},{\"panel_id\":\"b\",\"text\":\"illustrates aniline adsorption on Co(0001) for similar vertical and horizontal orientations. Although the geometries resemble those on Ru, the adsorption energies (−0.90 to −2.17 eV) reveal consistently weaker interaction than on Ru, indicating Co is less reactive toward aniline adsorption.\"},{\"panel_id\":\"c\",\"text\":\"presents two weakly bound physisorption states of aniline on SiO₂(0001). With small adsorption energies (−0.39 and −0.57 eV), the molecule remains mostly undistorted and only loosely interacts with the oxide surface, consistent with SiO₂ being a growth-permissive rather than growth-blocking substrate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Comparing adsorption on different surfaces reveals how strongly aniline can block growth on metals versus oxides. Strong adsorption on Ru and Co suggests effective surface inhibition, while weak adsorption on SiO₂ means the molecule desorbs easily, allowing selective growth on oxides. This contrast is essential for designing high-selectivity ALD/ALE processes where controlled deposition or removal depends on surface-dependent binding energies.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ru(0001) shows the strongest adsorption, with ΔE_ads as low as −3.59 eV.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes each orientation requires a separate DFT geometry optimization before calculating ΔE_ads.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"π–d interaction between the benzene ring and the metal surface, Orientation of the aromatic ring relative to surface atoms, Metal surface reactivity (Ru > Co > SiO₂), N lone-pair interaction with surface metal atoms, Surface lattice coordination and available adsorption sites\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_22_figure_3.jpg","caption":"Figure 3. DFT-optimized TDMAT adsorption configurations and energies on a bare $\\mathrm{Ru(0001)}$ b $\\mathrm{Ru(0001)}$ functionalized with aniline, c) bare $\\mathrm{Co(0001)}$ and d $\\mathrm{Co(0001)}$ functionalized with aniline (the light blue spheres represent Ti atoms, and the top layer metals are represented in a different color for better top view visualization).","id":"test/atomic-layer-deposition/simulation-usecase/22/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/22/figure_3","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/I. Tezsevin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":614,"height":1536,"image_format":"jpeg","image_sha256":"46a1a4db82cbc260cea90b850d93a50e37b87f47eccadf1463f42636ec4a837c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":41,"width":322,"height":757},{"panel_id":"b","x":347,"y":15,"width":264,"height":773},{"panel_id":"c","x":3,"y":882,"width":315,"height":648},{"panel_id":"d","x":354,"y":819,"width":257,"height":710}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows TDMAT strongly chemisorbing onto the clean Ru(0001) surface. Both side and top views highlight Ti–surface interaction, with a strong adsorption energy of −2.23 eV, indicating high precursor affinity for Ru.\"},{\"panel_id\":\"b\",\"text\":\"demonstrates that once Ru(0001) is pre-covered with aniline, TDMAT adsorption weakens substantially (−0.87 eV). The views illustrate steric blocking and reduced contact area with the surface.\"},{\"panel_id\":\"c\",\"text\":\"displays TDMAT adsorption on clean Co(0001), showing moderate binding (−1.86 eV). The geometry suggests less surface–precursor interaction compared to Ru but still strong enough to support growth.\"},{\"panel_id\":\"d\",\"text\":\"shows TDMAT adsorption on aniline-functionalized Co(0001), with greatly reduced adsorption (−0.90 eV). Aniline blocks active sites similarly to Ru, reducing precursor adhesion.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"When aniline pre-adsorbs on Ru or Co, it blocks active sites that TDMAT requires for chemisorption, reducing ΔEₐds by more than half. This suppression of strong binding prevents precursor attachment, effectively inhibiting growth on those metal regions. Meanwhile, growth can still proceed on unfunctionalized areas such as oxides, enabling controlled area-selective ALD through chemical contrast in adsorption strength.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TDMAT adsorbs most strongly on bare Ru(0001) with ΔEₐds = −2.23 eV.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes — the DFT workflow must include an initial optimization of the aniline-covered surface before placing the TDMAT precursor.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Presence or absence of aniline functionalization, Surface metal type (Ru vs Co), Accessibility of metal active sites, Orientation of the TDMAT ligand cage, Degree of steric blocking by adsorbed aniline\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_22_figure_5.jpg","caption":"Figure 5. (a) Aniline hydrogenolysis on metal (Ru and Co) surfaces and (b and c) effective gap distributions on Ru and Co model surfaces after hydrogenolysis. The blue dashed line at $0.49 \\mathrm{nm}$ represents the size of the TDMAT precursor. Insets show sample sections from the visual RSA outputs.","id":"test/atomic-layer-deposition/simulation-usecase/22/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/22/figure_5","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"bar chart"},{"panel_id":"c","label":"bar chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/I. Tezsevin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1150,"height":389,"image_format":"jpeg","image_sha256":"6df7818eff522ed218fadaf5b22301ea37fa7cbeda11f326977cd78815f0fc64","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":41,"y":26,"width":246,"height":363},{"panel_id":"b","x":330,"y":13,"width":397,"height":376},{"panel_id":"c","x":750,"y":15,"width":400,"height":374}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows the hydrogenolysis reaction of adsorbed aniline on Ru(0001) and Co(0001) surfaces. Upon exposure to H₂, the surface-bound aniline decomposes into surface-adsorbed C₆H₆ fragments and NH₃. The adsorption energies (−0.89 eV for Ru and −0.94 eV for Co) indicate the stability of the post-reaction species.\"},{\"panel_id\":\"b\",\"text\":\"presents a histogram of the remaining effective gap sizes on Ru(0001) after hydrogenolysis. Most gaps remain below 0.25 nm, far smaller than the 0.49 nm radius required for TDMAT access. The inset shows a dense RSA configuration, indicating Ru retains strong blocking capability even after inhibitor decomposition.\"},{\"panel_id\":\"c\",\"text\":\"provides the same analysis for Co(0001). Co exhibits a broader distribution with more mid-range gaps (0.25–0.35 nm), reflecting reduced packing efficiency after hydrogenolysis. The RSA inset reveals more open regions than Ru, implying weaker precursor blocking and lower selectivity.\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"| Effective gap size (nm) | Surface density (nm^-2) |\\n|---|---|\\n| 0.20 | 0.11 |\\n| 0.25 | 0.05 |\\n| 0.30 | 0.00 |\\n| 0.35 | 0.00 |\\n| 0.40 | 0.00 |\\n| 0.45 | 0.00 |\\n| 0.50 | 0.00 |\"},{\"panel_id\":\"c\",\"text\":\"| Effective gap size (nm) | Surface density (nm^-2) |\\n|---|---|\\n| 0.20 | 0.06 |\\n| 0.25 | 0.00 |\\n| 0.30 | 0.00 |\\n| 0.35 | 0.00 |\\n| 0.40 | 0.00 |\\n| 0.45 | 0.00 |\\n| 0.50 | 0.00 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Gap-size analysis determines whether the remaining openings between surface fragments are large enough to allow the TDMAT precursor to adsorb. Since TDMAT requires at least ~0.49 nm of accessible space, surfaces that retain only sub-threshold gaps will continue to block precursor adsorption effectively. Ru maintains gaps far below this threshold, preserving inhibitor effectiveness, while Co develops larger openings that may permit TDMAT infiltration, reducing selectivity. This analysis directly links post-reaction surface morphology with ALD blocking performance.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ru(0001) retains smaller gaps.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes each effective gap is determined by the minimum distance from an empty site to adjacent inhibitor residues after hydrogenolysis.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Loss of the NH₂ group, Conversion to a smaller benzene fragment, Reduced lateral footprint on the surface, Surface-dependent packing rearrangements, Residual binding strength differences on Ru vs Co\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_37_fig_2.jpg","caption":"Fig. 2. Packing of $\\mathrm{CH_4}$ molecules at a $\\mathrm{C} - \\mathrm{C}$ distance $R$ , computed by FP. (a) Model of close-packed $\\mathrm{CH_4}$ , constrained with $\\mathrm{H}^1$ - $\\mathrm{C}$ along $z$ , representing the surface $\\mathrm{Al - CH}_3$ bond. (b) Computed FP energetics (left axis) and optimised $\\mathrm{C} - \\mathrm{H}$ distances (right axis), excluding the $z$ -oriented $\\mathrm{C} - \\mathrm{H}^1$ .","id":"test/atomic-layer-deposition/simulation-usecase/37/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/37/fig_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/Simon D. Elliott.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":800,"height":858,"image_format":"jpeg","image_sha256":"99eb3f7f84256f97b6b848812e2fc2e7840498e42213075ac123b7b611803fb3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":123,"y":8,"width":496,"height":352},{"panel_id":"b","x":7,"y":395,"width":789,"height":460}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Model of a single hexagonal close-packed layer of CH4 molecules, with the H1–C bond constrained along the z-axis to represent the surface Al–CH3 bond.\"},{\"panel_id\":\"b\",\"text\":\"First-principles (FP) computed energetics as a function of C–C distance, R, along with the optimized C–H bond lengths (excluding the z-oriented H1–C bond). The plot illustrates how steric strain affects both the energy and C–H bond distances at different CH3 surface coverages.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Model | Description |\\n|---|---|\\n| Close-packed CH₄ | H1–C constrained along z, representing the surface Al–CH₃ bond |\"},{\"panel_id\":\"b\",\"text\":\"| RC–C (Å) | ΔE (eV) | Optimized C–H (Å) |\\n|---|---|---|\\n| 2.5 | 5.0 | 1.10 |\\n| 3.0 | 4.5 | 1.09 |\\n| 3.5 | 4.0 | 1.08 |\\n| 4.0 | 3.0 | 1.07 |\\n| 4.5 | 2.0 | 1.06 |\\n| 5.0 | 1.5 | 1.05 |\\n| 5.5 | 1.0 | 1.04 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the C–C distance decreases below 3.8 Å, strain increases, leading to contraction of the C–H bonds and a higher energy penalty (ΔE). At R > 3.8 Å, there is minimal CH3–CH3 interaction, indicating negligible steric strain.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A single hexagonal close-packed layer of CH4 molecules is used, with the H1–C bond constrained along the z-axis to mimic the vertical orientation of the Al–CH3 bond on the surface.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, it is important for controlling ALD surface chemistry.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"CH3–CH3 interaction becomes negligible at R > 3.8 Å, where ΔE < 0.2 eV and C–H bond lengths approach 1.10 Å, At smaller distances (R ≤ 3.0 Å), interaction is significant, ΔE increases (up to 1.8 eV), and C–H bonds contract to around 1.05 Å\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_37_fig_3.jpg","caption":"Fig. 3. Fully-hydroxylated gibbsite-like termination of $\\alpha -\\mathrm{Al}_2\\mathrm{O}_3$ computed by FP (light grey = Al, dark grey = C, white = H).","id":"test/atomic-layer-deposition/simulation-usecase/37/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/37/fig_3","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/Simon D. Elliott.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":558,"height":336,"image_format":"jpeg","image_sha256":"c8f9e51fa919cb4806d282c5bf713d4d3d2d61ca337ec2f901d6e170dbb82c34","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":558,"height":336}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 3 presents a first-principles–computed atomic model of a fully hydroxylated, gibbsite-like termination of α-Al₂O₃. The surface is saturated with OH groups formed by dissociative adsorption of H₂O, representing the chemically stable termination expected after the water half-cycle in alumina ALD. Aluminum, carbon, and hydrogen atoms are distinguished by color to clearly illustrate the surface hydroxyl network and its local bonding environment.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Parameter | Value |\\n|---|---|\\n| Surface termination | Fully hydroxylated gibbsite-like Al(OH)₃ |\\n| Surface H coverage [H] | 26 μmol m⁻² |\\n| Adsorption mechanism | Dissociative chemisorption of H₂O |\\n| Adsorption energy (ΔE) | −1.5 ± 0.1 eV per H₂O |\\n| Calculation method | First-principles (FP) |\\n| Additional molecular H₂O adsorption | Hydrogen-bonded networks |\\n| O–H hydrogen bond length | 1.6–2.2 Å |\\n| Molecular H₂O adsorption energy | −0.7 to −0.8 eV per H₂O |\\n| Behavior during purge | Molecular H₂O fully desorbs; partial OH recombination |\\n| Final surface state | Partially hydroxylated, [H] < 26 μmol m⁻² |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The fully hydroxylated gibbsite-like termination exhibits the maximum surface hydrogen coverage, with OH groups saturating all available reactive surface sites. In contrast, a partially hydroxylated alumina surface has fewer OH groups due to recombination and desorption of H₂O during the purge step, resulting in a lower hydrogen surface concentration. This difference directly affects surface reactivity in subsequent ALD half-cycles.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"It provides a uniform and well-defined density of reactive –OH sites, It enables self-limiting chemisorption of TMA in the next ALD half-cycle, It prevents uncontrolled accumulation of surface intermediates, It supports stoichiometric and reproducible Al₂O₃ film growth\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A dense, gibbsite-like network of surface hydroxyl (–OH) groups.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_41_fig1.jpg","caption":"Fig.1 Structure of the $\\mathrm{Cu(acac)_2}$ precursor.","id":"test/atomic-layer-deposition/simulation-usecase/41/fig1","sample_id":"atomic-layer-deposition/simulation-usecase/41/fig1","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/Xiao Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":425,"height":305,"image_format":"jpeg","image_sha256":"fb97f63cf77872ad4859f05e2fe90eee812d2ec4eb8f97491509f637349d1bdc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":425,"height":305}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The molecular structure diagram depicting the arrangement of atoms in the Cu(acac)2​ precursor molecule\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The central atom is Cu, and it is bonded to red O atoms.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Four O donors total. Two acetylacetonate ligands provide them.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The structure shows that Cu is bound through oxygen atoms of chelating ligands, which defines the starting coordination environment. During adsorption and subsequent surface chemistry, those Cu to O and C to O linkages are the ones that can distort, weaken, or break as ligands are removed. This is why the paper presents the precursor structure before analyzing adsorption and dissociation on Cu and Cu oxide surfaces.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cu(acac).\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_41_fig_10.jpg","caption":"Fig. 10 RMD snapshots for H abstraction (a and b), O insertion (c and d), water formation (e and f) observed during the reaction between $\\mathrm{Cu(acac)}_2$ and ozone on the $\\mathrm{CuO}(111)$ surface.","id":"test/atomic-layer-deposition/simulation-usecase/41/fig_10","sample_id":"atomic-layer-deposition/simulation-usecase/41/fig_10","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/Xiao Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":664,"height":475,"image_format":"jpeg","image_sha256":"d40ea9e545390415d9007c5b9d40ee8cbb7a304c39f37ac64f3c64ffdd03a15a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":7,"width":216,"height":229},{"panel_id":"b","x":229,"y":4,"width":213,"height":233},{"panel_id":"c","x":447,"y":5,"width":219,"height":227},{"panel_id":"d","x":3,"y":239,"width":222,"height":237},{"panel_id":"e","x":227,"y":239,"width":235,"height":238},{"panel_id":"f","x":452,"y":240,"width":213,"height":234}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"RMD snapshot at 16.4 ps showing Cu(acac)2 on a CuO(111) surface with an ozone molecule nearby, just before hydrogen abstraction.\"},{\"panel_id\":\"b\",\"text\":\"RMD snapshot at 16.8 ps showing hydrogen abstraction by ozone, with formation of an OH species and an O2 molecule near the adsorbed precursor.\"},{\"panel_id\":\"c\",\"text\":\"RMD snapshot at 93.9 ps illustrating an oxygen insertion event involving the methyl group, with oxidized fragments and nearby O containing species above the surface.\"},{\"panel_id\":\"d\",\"text\":\"RMD snapshot at 94.3 ps continuing the oxygen insertion pathway, with the precursor fragment still near the surface and additional O containing species present.\"},{\"panel_id\":\"e\",\"text\":\"RMD snapshot at 98.3 ps during the water formation stage, showing smaller oxidized organic fragments and emerging H2O related species above the surface.\"},{\"panel_id\":\"f\",\"text\":\"RMD snapshot at 99.4 ps showing a water molecule present above the surface after OH reacts further, alongside remaining oxidized organic fragments.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It represents the CuO(111) surface lattice used in the simulation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Hydrogen abstraction from the ligand, oxygen insertion into C to H bonds, and formation of H2O from reactive oxygen and hydrogen containing intermediates.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In (a) and (b), the Cu(acac)2 framework remains largely intact on the surface, with ozone initiating early chemistry through hydrogen abstraction. By (e) and (f), the scene is dominated by smaller oxidized fragments rather than a single intact precursor, and water is present as a reaction product. Overall, the snapshots depict progressive oxidation and fragmentation of the ligand during the ozone exposure.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"(a) and (b) correspond to hydrogen abstraction. After the abstraction, an OH species and an O2 molecule are shown.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_41_fig_11.jpg","caption":"Fig. 11 RMD snapshots for C-C breaking observed during the reaction between $\\mathrm{Cu(acac)_2}$ and ozone on the $\\mathrm{CuO(111)}$ surface.","id":"test/atomic-layer-deposition/simulation-usecase/41/fig_11","sample_id":"atomic-layer-deposition/simulation-usecase/41/fig_11","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/Xiao Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":880,"height":411,"image_format":"jpeg","image_sha256":"6aa413e50af5be3f5c3e4196e8d9b53f2585cfec433e47f9c693a2e413f8e7e2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":5,"width":219,"height":204},{"panel_id":"b","x":232,"y":7,"width":220,"height":206},{"panel_id":"c","x":454,"y":7,"width":210,"height":205},{"panel_id":"d","x":667,"y":4,"width":210,"height":207},{"panel_id":"e","x":5,"y":208,"width":223,"height":205},{"panel_id":"f","x":234,"y":210,"width":213,"height":201},{"panel_id":"g","x":450,"y":209,"width":209,"height":202},{"panel_id":"h","x":671,"y":208,"width":211,"height":204}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"RMD snapshot for C C breaking observed during the reaction between Cu(acac)2 and ozone on the CuO(111) surface, at t = 92.2 ps\"},{\"panel_id\":\"b\",\"text\":\"RMD snapshot for C C breaking observed during the reaction between Cu(acac)2 and ozone on the CuO(111) surface, at t = 93.2 ps\"},{\"panel_id\":\"c\",\"text\":\"RMD snapshot for C C breaking observed during the reaction between Cu(acac)2 and ozone on the CuO(111) surface, at t = 93.8 ps\"},{\"panel_id\":\"d\",\"text\":\"RMD snapshot for C C breaking observed during the reaction between Cu(acac)2 and ozone on the CuO(111) surface, at t = 69.7 ps\"},{\"panel_id\":\"e\",\"text\":\"RMD snapshot for C C breaking observed during the reaction between Cu(acac)2 and ozone on the CuO(111) surface, at t = 70.2 ps\"},{\"panel_id\":\"f\",\"text\":\"RMD snapshot for C C breaking observed during the reaction between Cu(acac)2 and ozone on the CuO(111) surface, at t = 146.6 ps\"},{\"panel_id\":\"g\",\"text\":\"RMD snapshot for C C breaking observed during the reaction between Cu(acac)2 and ozone on the CuO(111) surface, at t = 146.9 ps\"},{\"panel_id\":\"h\",\"text\":\"RMD snapshot for C C breaking observed during the reaction between Cu(acac)2 and ozone on the CuO(111) surface, at t = 147.6 ps\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| figure_label | time_step(ps) |\\n|---|---|\\n| a | 92.2 |\\n| b | 93.2 |\\n| c | 93.8 |\\n| d | 69.7 |\\n| e | 70.2 |\\n| f | 146.6 |\\n| g | 146.9 |\\n| h | 147.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The blue sphere represents the Cu atom of the Cu(acac)2 precursor fragment interacting with the CuO(111) surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The snapshots support a combustion like ligand removal chemistry under ozone exposure, where organic ligands can undergo deep oxidation and fragmentation rather than only simple ligand exchange. This is consistent with forming small oxidized by products and surface hydroxyl species, which can help reduce carbon contamination on the growing film. In an ALD context, this helps rationalize why ozone can be an effective co reactant for depositing copper oxide from Cu(acac)2.\"}]},{\"panel_id\":\"h\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In a to c, C to C cleavage leads to methylglyoxal and ethenone, plus an adsorbed hydroxyl group on the surface.\\n\\nIn d to h, continued adsorption of two oxygen atoms leads to methylglyoxal in the gas phase and acetate formation, with acetate described as readily desorbing from the surface.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"First, an oxygen atom adsorbs at the ligand C to C bridge site and forms an epoxide like intermediate. Next, the C to C bond is cleaved through an epoxy ether type transformation while the ligand detaches from the surface bound Cu center. Finally, the detached complex dissociates, producing methylglyoxal and ethenone in the gas phase and leaving an adsorbed hydroxyl group on the surface.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_41_fig_2.jpg","caption":"Fig. 2 Adsorption sites (a) and optimized geometries of different adsorbed species $(b - g)$ on the $\\mathrm{Cu(110)}$ surface calculated using the DFT-PBE functional. The adsorption geometries calculated using vdW-DF and ReaxFF are similar to that calculated using DFT-PBE and are thus not shown here.","id":"test/atomic-layer-deposition/simulation-usecase/41/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/41/fig_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/Xiao Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":947,"height":397,"image_format":"jpeg","image_sha256":"5df9d3fe9ece601d5b13a40ce3754e7732d646305ee2623f15913a818a72660b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":6,"width":254,"height":382},{"panel_id":"b","x":264,"y":8,"width":240,"height":193},{"panel_id":"c","x":263,"y":207,"width":246,"height":190},{"panel_id":"d","x":508,"y":4,"width":245,"height":202},{"panel_id":"e","x":513,"y":210,"width":242,"height":187},{"panel_id":"f","x":755,"y":4,"width":192,"height":196},{"panel_id":"g","x":761,"y":205,"width":187,"height":192}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Adsorption sites on the Cu(110) surface labeled top (T), hollow (H), bridge1 (B1), and bridge2 (B2).\"},{\"panel_id\":\"b\",\"text\":\"Optimized geometry of Cu(acac)2 adsorbed on the top site of Cu(110), labeled Cu(acac)2@T.\"},{\"panel_id\":\"c\",\"text\":\"Optimized geometry of Cu(acac)2 adsorbed on the bridge1 site of Cu(110), labeled Cu(acac)2@B1.\"},{\"panel_id\":\"d\",\"text\":\"Optimized geometry of Cu(acac)2 adsorbed on the hollow site of Cu(110), labeled Cu(acac)2@H.\"},{\"panel_id\":\"e\",\"text\":\"Optimized geometry of an adsorbed Cu atom on Cu(110).\"},{\"panel_id\":\"f\",\"text\":\"Optimized geometry of Cu(acac) adsorbed on Cu(110).\"},{\"panel_id\":\"g\",\"text\":\"Optimized geometry of an adsorbed acac ligand on Cu(110).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They label the top, hollow, bridge1, and bridge2 adsorption sites on the Cu(110) surface.\"}]},{\"panel_id\":\"g\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Intact Cu(acac)2 is shown in (b), (c), and (d). Dissociation products are shown in (e) Cu, (f) Cu(acac), and (g) acac.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The comparison supports the proposed sequential dissociation pathway Cu(acac)2 to Cu(acac) to Cu on Cu(110). It also shows that acac can remain strongly adsorbed, which can block sites and contribute to self limiting growth behavior. Together, these adsorption motifs help interpret how precursor activation and ligand retention can shape the ALD half cycle.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Cu(acac)2 is described as preferring a parallel orientation on the top and bridge1 sites, while it becomes strongly bound and distorted on the hollow site. In contrast, Cu(acac) and acac are described as preferring a perpendicular orientation relative to the surface normal. This highlights that fragmentation changes not only the chemical identity but also the preferred adsorption geometry.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_41_fig_4.jpg","caption":"Fig. 4 Geometric structures and Mulliken charge for the dissociation of $\\mathrm{Cu(acac)_2}$ on the $\\mathrm{Cu(110)}$ surface calculated using the DFT-PBE functional. Values shown in blue and black colors represent the charge of the $\\mathrm{Cu}$ atom and the acac-ligand of the $\\mathrm{Cu}$ precursor, respectively.","id":"test/atomic-layer-deposition/simulation-usecase/41/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/41/fig_4","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"},{"panel_id":"h","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/Xiao Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":947,"height":439,"image_format":"jpeg","image_sha256":"40fb7e4d1fc3d6fab69f286cfd5ece06e90c585bb10feefe0a4a785d16119c7b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":0,"width":246,"height":227},{"panel_id":"b","x":256,"y":0,"width":230,"height":227},{"panel_id":"c","x":494,"y":0,"width":227,"height":226},{"panel_id":"d","x":710,"y":3,"width":232,"height":229},{"panel_id":"e","x":0,"y":233,"width":253,"height":204},{"panel_id":"f","x":247,"y":231,"width":246,"height":206},{"panel_id":"g","x":489,"y":238,"width":227,"height":199},{"panel_id":"h","x":719,"y":233,"width":223,"height":204}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"DFT PBE geometry and Mulliken charges for Cu(acac)2 in the gas phase, Cu(acac)2(g).\"},{\"panel_id\":\"b\",\"text\":\"DFT PBE geometry and Mulliken charges for Cu(acac)2 adsorbed at the hollow site on Cu(110), Cu(acac)2@H.\"},{\"panel_id\":\"c\",\"text\":\"DFT PBE geometry and Mulliken charges for the first dissociation transition state on Cu(110), TS1.\"},{\"panel_id\":\"d\",\"text\":\"DFT PBE geometry and Mulliken charges for the products after the first dissociation step on Cu(110), acac plus Cu(acac).\"},{\"panel_id\":\"e\",\"text\":\"DFT PBE geometry and Mulliken charges for Cu(acac)2 adsorbed at the top site on Cu(110), Cu(acac)2@T.\"},{\"panel_id\":\"f\",\"text\":\"DFT PBE geometry and Mulliken charges for the Cu(acac) fragment on Cu(110), Cu(acac).\"},{\"panel_id\":\"g\",\"text\":\"DFT PBE geometry and Mulliken charges for the second dissociation transition state on Cu(110), TS2.\"},{\"panel_id\":\"h\",\"text\":\"DFT PBE geometry and Mulliken charges for the products after the second dissociation step on Cu(110), acac plus Cu.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"},{\"panel_id\":\"h\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Blue numbers are the Mulliken charge of the Cu atom, and black numbers are the Mulliken charge of the acac ligand.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Cu charge decreases stepwise along the pathway, from about 1.19 e in Cu(acac)2(g) to about 0.08 e in the final acac plus Cu state. This trend indicates sequential reduction of the Cu center during adsorption and ligand loss. The paper interprets the endpoint as formation of a near zero valence metallic Cu atom on the surface.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Panel c shows the first transition state, labeled TS1\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Cu(acac)2 dissociates to Cu(acac) plus acac via TS1.\\n\\n, Cu(acac) dissociates to Cu plus acac via TS2.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_41_fig_5.jpg","caption":"Fig. 5 RMD snapshots for the dissociation of $\\mathrm{Cu(acac)}_2$ on the $\\mathrm{Cu(110)}$ surface.","id":"test/atomic-layer-deposition/simulation-usecase/41/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/41/fig_5","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/Xiao Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":472,"height":378,"image_format":"jpeg","image_sha256":"d2e55612277f31bf14e1b1f2c86ce01bd8aaecf2a102da7d45efadd43e551596","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":5,"width":235,"height":186},{"panel_id":"b","x":239,"y":4,"width":233,"height":184},{"panel_id":"c","x":3,"y":201,"width":238,"height":178},{"panel_id":"d","x":242,"y":199,"width":228,"height":177}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"RMD snapshot for Cu(acac)2 on the Cu(110) surface at the initial state, prior to dissociation.\"},{\"panel_id\":\"b\",\"text\":\"RMD snapshot for Cu O bond breaking and acac ligand tilting during Cu(acac)2 dissociation on the Cu(110) surface, at t = 7.3 ps.\"},{\"panel_id\":\"c\",\"text\":\"RMD snapshot for complete dissociation of one acac ligand from Cu(acac)2, forming surface acac and Cu(acac) species on Cu(110), at t = 10.8 ps.\"},{\"panel_id\":\"d\",\"text\":\"RMD snapshot for further dissociation of Cu(acac) into surface Cu and acac species on Cu(110), at t = 18.5 ps.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The blue slab represents the Cu(110) surface.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 10.8 ps, one acac ligand has fully dissociated from Cu(acac)2, leaving surface acac and a surface Cu(acac) fragment. At 18.5 ps, the remaining Cu(acac) fragment dissociates further. This produces surface Cu and an additional surface acac species\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Breaking of a Cu O bond accompanied by tilting of an acac ligand.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_41_fig_7.jpg","caption":"Fig. 7 RMD snapshots for the reaction between $\\mathrm{Cu(acac)_2}$ and H atoms on the $\\mathrm{Cu(110)}$ surface.","id":"test/atomic-layer-deposition/simulation-usecase/41/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/41/fig_7","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"},{"panel_id":"h","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/Xiao Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":864,"height":419,"image_format":"jpeg","image_sha256":"4a4e7a7fcbf0146df57d69329565e19f7f50d0c50e241e6c292f03d1dfcb3962","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":7,"width":216,"height":207},{"panel_id":"b","x":224,"y":6,"width":214,"height":217},{"panel_id":"c","x":441,"y":4,"width":214,"height":212},{"panel_id":"d","x":661,"y":4,"width":202,"height":211},{"panel_id":"e","x":5,"y":224,"width":199,"height":195},{"panel_id":"f","x":210,"y":224,"width":252,"height":194},{"panel_id":"g","x":470,"y":220,"width":203,"height":199},{"panel_id":"h","x":678,"y":225,"width":183,"height":193}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"RMD snapshot for the reaction between Cu(acac)2 and H atoms on the Cu(110) surface, at t = 9.7 ps.\"},{\"panel_id\":\"b\",\"text\":\"RMD snapshot showing formation and release of a H2(acac) molecule during the reaction between Cu(acac)2 and H atoms on the Cu(110) surface, at t = 14.6 ps.\"},{\"panel_id\":\"c\",\"text\":\"RMD snapshot for a subsequent intermediate after H impact during the reaction between Cu(acac)2 and H atoms on the Cu(110) surface, at t = 14.7 ps.\"},{\"panel_id\":\"d\",\"text\":\"RMD snapshot showing oxygen abstraction leading to H2O release during the reaction between Cu(acac)2 and H atoms on the Cu(110) surface, at t = 15.2 ps.\"},{\"panel_id\":\"e\",\"text\":\"RMD snapshot for later stage organic fragmentation products during the reaction between Cu(acac)2 and H atoms on the Cu(110) surface, at t = 20.1 ps.\"},{\"panel_id\":\"f\",\"text\":\"RMD snapshot showing formation of ethane and acetone during the reaction between Cu(acac)2 and H atoms on the Cu(110) surface, at t = 20.3 ps.\"},{\"panel_id\":\"g\",\"text\":\"RMD snapshot for a late stage hydrocarbon fragment after continued hydrogen reactions during the reaction between Cu(acac)2 and H atoms on the Cu(110) surface, at t = 22.2 ps.\"},{\"panel_id\":\"h\",\"text\":\"RMD snapshot showing methane production during the reaction between Cu(acac)2 and H atoms on the Cu(110) surface, at t = 22.4 ps.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"},{\"panel_id\":\"h\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The paper reports that HxO formation starts slightly earlier (about 10 ps earlier) than CxHy formation. This indicates that atomic H reacts first with the oxygen in the Cu precursor, before extensive carbon hydrogenation and fragmentation occurs. This sequencing is consistent with early oxygen containing products such as H2O appearing before the hydrocarbon products dominate\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They represent atomic hydrogen (H) present above the Cu(110) surface in the reactive MD simulation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Their RMD shows molecular H2 hardly reacts with Cu(acac)2 at 600 K, so it is not an effective ligand removal agent in this model.\\n\\nAtomic H is reported to be very reactive, promoting Cu O bond breaking and subsequent ligand fragmentation into volatile HxO and CxHy products.\\n\\nThis behavior is intended to represent the chemically active species created in a hydrogen plasma during plasma enhanced ALD.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"H2(acac) is formed and released at about 14.6 ps.\\n\\nH2O is released at about 15.2 ps.\\n\\nEthane and acetone form at about 20.3 ps.\\n\\nMethane is produced at about 22.4 ps.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_41_fig_9.jpg","caption":"Fig. 9 RMD snapshots for the reaction between $\\mathrm{Cu(acac)}_2$ and $\\mathrm{H}_2\\mathrm{O}$ on the $\\mathrm{Cu}_2\\mathrm{O}(111)$ surface.","id":"test/atomic-layer-deposition/simulation-usecase/41/fig_9","sample_id":"atomic-layer-deposition/simulation-usecase/41/fig_9","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/Xiao Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":550,"height":480,"image_format":"jpeg","image_sha256":"32ebfd4d3fcbcf0553f57517de58bcef5e30fa41ee272f6a68d55c475ff2598b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":6,"width":273,"height":243},{"panel_id":"b","x":282,"y":5,"width":265,"height":237},{"panel_id":"c","x":6,"y":255,"width":272,"height":224},{"panel_id":"d","x":282,"y":254,"width":268,"height":226}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"RMD snapshot for the Cu(acac)2 plus H2O reaction on the Cu2O(111) surface, showing Cu(acac)2 dissociation into Cu(acac) and acac at t = 25 ps.\"},{\"panel_id\":\"b\",\"text\":\"RMD snapshot for the Cu(acac)2 plus H2O reaction on the Cu2O(111) surface, showing H2O approaching the adsorbed Cu(acac) intermediate prior to proton transfer at t = 56.1 ps.\"},{\"panel_id\":\"c\",\"text\":\"RMD snapshot for the Cu(acac)2 plus H2O reaction on the Cu2O(111) surface, showing proton transfer from H2O to Cu(acac) to form Cu[H(acac)] and surface OH at t = 56.8 ps.\"},{\"panel_id\":\"d\",\"text\":\"RMD snapshot for the Cu(acac)2 plus H2O reaction on the Cu2O(111) surface, showing Cu O bond breaking in Cu[H(acac)] and desorption of acetylacetone H(acac) to the gas phase at t = 118.6 ps.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Cu2O(111) surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"They interpret the reaction as a ligand exchange process where surface ligands are replaced by OH groups and a protonated ligand is eliminated to the gas phase. The paper notes that similar ligand exchange steps are widely observed in water based oxide ALD, such as TMA plus H2O and Hf(NMe2)4 plus H2O. In that analogy, H2O supplies protons for ligand removal while generating surface OH that can serve as reactive sites for subsequent precursor adsorption\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the water case, the paper reports that the proton transfer occurs only after Cu(acac)2 has already fully dissociated on the surface. In contrast, for atomic H the Cu O bond cleavage is promoted upon direct H impact. This difference indicates that H2O is much less reactive toward initiating Cu O bond breaking than atomic H in these simulations.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Cu(acac)2 dissociates into Cu(acac) and acac on the surface after about 25 ps.\\n\\nA proton transfers from H2O to adsorbed Cu(acac), forming Cu[H(acac)] and surface OH after about 56.8 ps.\\n\\nThe Cu O bond of Cu[H(acac)] breaks, leading to desorption of acetylacetone H(acac) after about 118.6 ps.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_46_fig1.jpg","caption":"Fig.1. a) Top and side views of a fully -OH-terminated Si (001) surface, and (b) perspective views of the optimized silane, DMAS, BDMAS, TDMAS, and TeDMAS. The $\\mathrm{Si}_{\\mathrm{surface}}$ and $X_{-OH}$ $(X = 0,\\mathrm{H})$ atoms indicate the Si atom and $X$ atom of -OH on the surface, respectively. The $X^{\\prime}$ precursor $(X^{\\prime} = \\mathrm{Si},\\mathrm{N},\\mathrm{C},$ and H) atom indicates the $X^{\\prime}$ atom in the Si precursor.","id":"test/atomic-layer-deposition/simulation-usecase/46/fig1","sample_id":"atomic-layer-deposition/simulation-usecase/46/fig1","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/images/fig1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/Yong-Chan Jeong et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":700,"height":1392,"image_format":"jpeg","image_sha256":"5d014a9a4f3c7e1c71919e65c6107c88d293c24e51a0fc7fc60cb415346f58cc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":32,"y":3,"width":653,"height":782},{"panel_id":"b","x":4,"y":841,"width":689,"height":544}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Top and side views of a fully hydroxyl-terminated Si(001) surface model used for density functional theory calculations, where surface –OH groups are formed on the top silicon layer, the upper layers are relaxed, and the bottom layers are fixed to represent bulk silicon, providing an ALD-relevant reactive interface.\"},{\"panel_id\":\"b\",\"text\":\"Optimized molecular geometries of silicon precursors with increasing numbers of dimethylamino (DMA) ligands, including Silane, DMAS, BDMAS, TDMAS, and TeDMAS, used to study the influence of ligand number on adsorption behavior and reaction energetics during atomic layer deposition.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This structural setup enables a controlled and systematic evaluation of how silicon precursors with varying ligand numbers interact with a hydroxylated Si(001) surface under identical conditions. By combining a realistic OH-terminated surface model with optimized precursor geometries, the figure establishes the foundation for analyzing adsorption strength, reaction pathways, and steric effects that govern ALD efficiency\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The number of DMA ligands increases systematically from 0 (Silane) to 4 (TeDMAS).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Presence of surface –OH groups, Increasing number of Si–N(DMA) bonds, Replacement of Si–H bonds by bulkier DMA ligands, Distinct surface (slab) vs molecular (precursor) geometries\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_46_fig_2.jpg","caption":"Fig. 2. Adsorption configurations and energies $(E_{\\mathrm{ad}},\\mathrm{eV})$ of silane, DMAS, BDMAS, TDMAS, and TeDMAS on the surface. BDMAS has two favorable adsorption configurations: BDMAS1Si81N and BDMAS2N. In the BDMAS1Si81N configuration, the $\\mathrm{Si}_{\\mathrm{BDMS}}$ and $\\mathrm{N}_{\\mathrm{BDMS}}$ atoms were located on the $\\mathrm{O - OH}$ and $\\mathrm{H - OH}$ atoms, respectively. In the BDMAS2N configuration, the two $\\mathrm{N}_{\\mathrm{BDMS}}$ atoms were located on the two $\\mathrm{H - OH}$ atoms. The unit values are shown in $\\mathrm{\\AA}$","id":"test/atomic-layer-deposition/simulation-usecase/46/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/46/fig_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/Yong-Chan Jeong et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":608,"height":784,"image_format":"jpeg","image_sha256":"85e99c3c617d7a548f692573bc09680dd8d3c8d2be1452d44ed409e4ada81ab5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":608,"height":784}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Optimized adsorption configuration of silane on a hydroxyl-terminated Si(001) surface, showing the interaction between the precursor and surface –OH groups along with the calculated adsorption energy and key interatomic distances.\"},{\"panel_id\":\"b\",\"text\":\"Adsorption geometry of DMAS on the hydroxyl-terminated Si(001) surface, illustrating precursor–surface bonding characteristics, labeled bond lengths, and the corresponding adsorption energy.\"},{\"panel_id\":\"c\",\"text\":\"First optimized adsorption configuration of BDMAS on the hydroxyl-terminated Si(001) surface, highlighting one possible adsorption pathway and its associated structural parameters and adsorption energy.\"},{\"panel_id\":\"d\",\"text\":\"Second optimized adsorption configuration of BDMAS on the hydroxyl-terminated Si(001) surface, demonstrating an alternative adsorption geometry and indicating the presence of multiple adsorption pathways.\"},{\"panel_id\":\"e\",\"text\":\"Optimized adsorption configuration of TDMAS on the hydroxyl-terminated Si(001) surface, showing increased ligand coordination effects, labeled interatomic distances, and adsorption energy.\"},{\"panel_id\":\"f\",\"text\":\"Optimized adsorption configuration of TeDMAS on the hydroxyl-terminated Si(001) surface, illustrating the influence of the highest DMA ligand count on precursor–surface interaction strength and steric effects.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Interaction | Distance (Å) |\\n|---------------------------|--------------|\\n| H(surface) – Si | 2.33 |\\n| O(surface) – H(silane) | 2.89 |\\n| Internal Si–H reference | 1.49 |\"},{\"panel_id\":\"b\",\"text\":\"| Interaction | Distance (Å) |\\n|------------------------------------|--------------|\\n| Si – surface O | 1.74 |\\n| Si – surface H | 3.03 |\\n| Internal ligand bond | 1.76 |\"},{\"panel_id\":\"c\",\"text\":\"| Interaction | Distance (Å) |\\n|--------------------------|--------------|\\n| Si – O(surface) | 1.69 |\\n| N – H(surface) | 1.76 |\\n| Secondary Si – surface | 3.12 |\"},{\"panel_id\":\"d\",\"text\":\"| Interaction | Distance (Å) |\\n|--------------------------|--------------|\\n| N – H(surface) | 1.75 |\\n| N – H(surface) | 1.83 |\\n| Internal ligand bond | 1.84 |\"},{\"panel_id\":\"e\",\"text\":\"| Interaction | Distance (Å) |\\n|--------------------------|--------------|\\n| Si – O(surface) | 1.77 |\\n| N – H(surface) | 1.76 |\\n| Secondary Si – surface | 3.20 |\"},{\"panel_id\":\"f\",\"text\":\"| Interaction | Distance (Å) |\\n|--------------------------|--------------|\\n| Si – O(surface) | 1.75 |\\n| N – H(surface) | 1.77 |\\n| Secondary Si – surface | 3.44 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure demonstrates that increasing the number of DMA ligands enhances precursor adsorption through stronger electrostatic and hydrogen-bonding interactions with surface –OH groups, which is beneficial for ALD surface saturation. However, the emergence of multiple adsorption configurations and steric crowding at higher ligand numbers indicates that strong adsorption alone does not guarantee optimal reactivity.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The adsorption energy increases from 0.16 eV (silane) to 0.84 eV (TeDMAS) with increasing DMA ligand number.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Number of DMA ligands attached to the Si atom, Presence of N···H–OH hydrogen bonding, Si···O–OH interaction distance, Steric bulk of the DMA ligands, Multiple adsorption configurations (e.g., BDMAS¹Si&¹N vs BDMAS²N)\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_47_figure_1.jpg","caption":"Figure 1. Side views of surface models for hydroxylated alumina surfaces prior to the adsorption of TMA: a) gibbsite-like fully hydroxylated surface $(25\\mu \\mathrm{mol}\\mathrm{m}^{-2}$ of OH), and b) partially hydroxylated surface $(16\\mu \\mathrm{mol}\\mathrm{m}^{-2})$ that is more representative of ALD conditions and features both higher and lower OH groups. Ball-and-stick representation: violet $= \\mathsf{Al}$ red $= \\mathsf{O}$ white $= \\mathsf{H}$","id":"test/atomic-layer-deposition/simulation-usecase/47/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/47/figure_1","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/Simon D. Elliott et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":875,"height":575,"image_format":"jpeg","image_sha256":"db2f1f56be711e18c80ae3c166f6276d23a8e8e0473085eed0dc7729d4bb0508","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":45,"y":5,"width":825,"height":203},{"panel_id":"b","x":37,"y":251,"width":834,"height":322}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_47_figure_10.jpg","caption":"Figure 10. Schematic representations of four levels of atomistic simulation of ALD mechanism: a) reactivity of model molecules, b) reactive adsorption of individual precursors on a model surface, c) multiple adsorbates on a complex substrate, d) morphology of the growing film.","id":"test/atomic-layer-deposition/simulation-usecase/47/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/47/figure_10","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"conceptual diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/Simon D. Elliott et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1166,"height":636,"image_format":"jpeg","image_sha256":"bb7682aed49adc5f6fd5e66e4dbf4861c708b07f265bef866437dac07db0d303","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":37,"y":10,"width":477,"height":294},{"panel_id":"b","x":597,"y":10,"width":513,"height":289},{"panel_id":"c","x":39,"y":321,"width":513,"height":312},{"panel_id":"d","x":600,"y":315,"width":563,"height":312}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_47_figure_2.jpg","caption":"Figure 2. Cooperative effect in metal oxide ALD. The presence of a remaining fragment (pink atoms) in the neighborhood of the ligand creates a highly facilitative environment for proton transfer from the surface oxygen to the ligand. The pink fragment does not participate directly in proton transfer but does increase the coordination number of the central surface oxygen. The activation energy computed for proton transfer is thus lower when the pink fragment is present (pink text, eV) than when it is absent (black text, eV). a) $A1_{2}O_{3}$ from TMA $+H_{2}O_{i}$ b) $HfO_{2}$ from $\\mathsf{Hf(NMe_2)_4 + H_2O}$ $\\mathbf{red} = \\mathbb{O}$ blue $= \\mathbb{N}$ white $= \\mathbb{H}$ large gray $= \\mathbb{A}1$ or Hf, and small gray $= \\mathbb{C}$ Reproduced with permission.[22] Copyright 2015, Royal Society of Chemistry.","id":"test/atomic-layer-deposition/simulation-usecase/47/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/47/figure_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/Simon D. Elliott et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":861,"height":405,"image_format":"jpeg","image_sha256":"35ad5296541c8f0c0aec386ff7607e537148b6b44ff4c8bb49d66175802edf6c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":58,"width":418,"height":345},{"panel_id":"b","x":442,"y":4,"width":417,"height":395}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_47_figure_6.jpg","caption":"Figure 6. Molecular layer deposition. The proposed structure and interchain interaction of a PDI/BDO polyurethane polymer on silicon wafer and glass. A) Hydrogen bonding between the H atom on N and the O atom in the C = O unit. B) The horizontal orientation of the N-H, C-H, C = O, and C-O bonds. Reproduced with permission.[98] Copyright 2003, American Association for the Advancement of Science.","id":"test/atomic-layer-deposition/simulation-usecase/47/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/47/figure_6","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/Simon D. Elliott et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":653,"height":348,"image_format":"jpeg","image_sha256":"9ca4890916b7ebcfc9a45fd142b4675f6d1f94b87df0bc009c4608ba33311ab3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":14,"y":5,"width":327,"height":343},{"panel_id":"b","x":355,"y":6,"width":296,"height":339}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_47_figure_7.jpg","caption":"Figure 7. Molecular layer deposition. Optimized geometry of the product of a hydrolyzed 3-amino-propyltriethoxysilane (APTES) chain that has reacted with PDIC and subsequently ED. Reproduced with permission.[99] Copyright 2010, American Chemical Society.","id":"test/atomic-layer-deposition/simulation-usecase/47/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/47/figure_7","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/Simon D. Elliott et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":605,"height":450,"image_format":"jpeg","image_sha256":"ec029a0a667d6263eefcdf861ef5ac998ed8e89425b88b4d3a58856c4ee3d415","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":605,"height":450}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_51_fig_1.jpg","caption":"Fig. 1 The optimized initial, transition, and final structures of the dissociative chemisorption step for (a) $\\mathsf{H}_{2}$ and (b) $\\mathbb{N}_2$ on the TiN (001) surface.","id":"test/atomic-layer-deposition/simulation-usecase/51/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/51/fig_1","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":923,"height":700,"image_format":"jpeg","image_sha256":"e5a9176d8f543fea38ca96a896772c33036a33d488cd1950d7665090575d83c3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":42,"y":8,"width":873,"height":372},{"panel_id":"b","x":55,"y":424,"width":863,"height":274}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Optimized structures for H₂ dissociative chemisorption on the TiN (001) surface, showing H₂ adsorption, H–H bond dissociation, and bonding of H atoms preferentially to Ti sites.\"},{\"panel_id\":\"b\",\"text\":\"Optimized structures for N₂ dissociative chemisorption on the TiN (001) surface, showing adsorption, N≡N bond breaking, and structural evolution along the dissociation pathway.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Description|\\n|-----------|\\n|Optimized initial state (IS), transition state (TS), and final state (FS) structures showing H–H bond dissociation and adsorption of H atoms on Ti sites of the TiN (001) surface.|\"},{\"panel_id\":\"b\",\"text\":\"|Description|\\n|-----------|\\n|Optimized initial state (IS), transition state (TS), and final state (FS) structures illustrating N–N bond dissociation on the TiN (001) surface.|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding dissociative chemisorption on TiN (001) is important because it reveals how small molecules activate and interact with reactive surface sites. This knowledge is essential for predicting surface reactivity, catalytic behavior, and material performance in applications such as catalysis, surface coatings, and high-temperature or reactive environments where TiN is commonly used.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dissociated H atoms preferentially bind to titanium sites, with a binding energy approximately 0.42 eV higher than on nitrogen sites.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Initial state (molecular adsorption), Transition state (bond stretching and dissociation), Final state (adsorbed dissociated atoms on the surface)\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_51_fig_2.jpg","caption":"Fig. 2 The optimized initial, transition, and final structures of the dissociative chemisorption step for (a) $\\mathsf{H}_{2}$ and (b) $\\mathsf{N}_{2}$ on the Ti-terminated TiN (111) surface.","id":"test/atomic-layer-deposition/simulation-usecase/51/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/51/fig_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":928,"height":578,"image_format":"jpeg","image_sha256":"5f67c0583e1a90353082f96fea3dcf1d256e512da16516bb05c492b67ead540f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":54,"y":4,"width":868,"height":333},{"panel_id":"b","x":54,"y":370,"width":871,"height":204}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Optimized structures for H₂ dissociative chemisorption on the Ti-terminated TiN (111) surface, showing H₂ adsorption, H–H bond dissociation, and adsorption of H atoms at three-fold hollow sites formed by Ti atoms.\"},{\"panel_id\":\"b\",\"text\":\"Optimized structures for N₂ dissociative chemisorption on the Ti-terminated TiN (111) surface, showing adsorption, N≡N bond dissociation, and N atoms occupying the same three-fold hollow Ti sites. The figure highlights the high reactivity of the Ti-terminated (111) surface compared to TiN (001).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Description|\\n|-----------|\\n|Optimized initial state (IS), transition state (TS), and final state (FS) structures showing H–H bond dissociation and adsorption of H atoms at the three-fold hollow Ti site on the Ti-terminated TiN (111) surface.|\"},{\"panel_id\":\"b\",\"text\":\"|Description|\\n|-----------|\\n|Optimized initial state (IS), transition state (TS), and final state (FS) structures illustrating N–N bond dissociation and adsorption of N atoms at the three-fold hollow Ti site on the Ti-terminated TiN (111) surface.|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Ti-terminated TiN (111) surface has more dangling bonds per Ti atom compared to TiN (001), which increases surface reactivity. This facilitates H–H and N–N bond dissociation with lower activation energies and higher adsorption energies, making dissociative chemisorption energetically favorable. Understanding this surface reactivity is important for predicting catalytic behavior and designing materials for surface reactions.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dissociation of both H₂ and N₂ is more facile on Ti-terminated TiN (111) due to smaller activation energies (0.11 eV for H₂, 0.92 eV for N₂) compared to TiN (001).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Initial state (IS) – molecular adsorption, Transition state (TS) – bond stretching/dissociation, Final state (FS) – dissociated H or N atoms adsorbed, Adsorption site – three-fold hollow site formed by Ti atoms\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_51_fig_3.jpg","caption":"Fig. 3 The optimized initial, transition, and final structures of the dissociative chemisorption step for (a) $\\mathsf{H}_{2}$ and (b) $\\mathsf{N}_{2}$ on the N-terminated TiN (111) surface.","id":"test/atomic-layer-deposition/simulation-usecase/51/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/51/fig_3","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":892,"height":572,"image_format":"jpeg","image_sha256":"10e2dc4d86a79337b456f4266b666bda3c17cc45720388bda02dd5aaa82cba1a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":51,"y":12,"width":838,"height":322},{"panel_id":"b","x":48,"y":360,"width":841,"height":212}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Optimized structures for H₂ dissociative chemisorption on the N-terminated TiN (111) surface, showing H₂ adsorption, H–H bond dissociation, and adsorption of H atoms at three-fold hollow N sites. The reaction is exothermic with a low energy barrier.\"},{\"panel_id\":\"b\",\"text\":\"Optimized structures for N₂ adsorption on the N-terminated TiN (111) surface, showing that N₂ does not dissociate due to an endothermic reaction and high activation energy.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Description|\\n|-----------|\\n|Optimized initial state (IS), transition state (TS), and final state (FS) structures showing H–H bond dissociation and adsorption of H atoms at the three-fold hollow site formed by N atoms. The reaction is exothermic (ΔE ≈ -4.66 eV) with a low activation energy of 0.26 eV.|\"},{\"panel_id\":\"b\",\"text\":\"|Description|\\n|-----------|\\n|Optimized initial state (IS), transition state (TS), and final state (FS) structures illustrating that N₂ is not dissociated on the N-terminated TiN (111) surface. The reaction is endothermic (ΔE ≈ 1.24 eV) with a high activation energy of 1.45 eV, indicating that N–N bond breaking is unfavorable on this surface.|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The N-terminated TiN (111) surface has a high binding energy for H atoms (Eb = 5.73 eV) and a low activation energy for H–H bond breaking, making H₂ dissociation energetically favorable. In contrast, N₂ has a higher bond dissociation energy and the surface does not provide sufficient stabilization for N atoms, resulting in an endothermic reaction with a high activation barrier, so N₂ remains intact. This difference highlights the surface’s selective reactivity toward small molecules.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"H₂ dissociation is exothermic with a low activation energy (ΔE ≈ -4.66 eV, Ea = 0.26 eV), whereas N₂ dissociation is endothermic with a high activation energy (ΔE ≈ 1.24 eV, Ea = 1.45 eV) and does not occur.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Initial state (IS) – molecular adsorption, Transition state (TS) – bond stretching/dissociation, Final state (FS) – H atoms adsorbed at three-fold hollow N sites, N₂ remains undissociated\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_51_fig_5.jpg","caption":"Fig. 5 Dissociative chemisorption of $\\mathsf{B}_2\\mathsf{H}_6$ on the H-covered Ti-terminated TiN (111) surface: (a) the first reaction step (b) the second reaction step.","id":"test/atomic-layer-deposition/simulation-usecase/51/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/51/fig_5","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":883,"height":703,"image_format":"jpeg","image_sha256":"efa615690d2273857bf8dc87966c18d9ff2dffa2c1991771eb576a3df198a1a6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":4,"width":877,"height":363},{"panel_id":"b","x":6,"y":410,"width":872,"height":292}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"First step of B₂H₆ dissociative chemisorption on the H-covered Ti-terminated TiN (111) surface, showing H atoms from B₂H₆ reacting with surface H atoms to form H₂ that desorbs, leaving B₂H₅ bound to a hollow site.\"},{\"panel_id\":\"b\",\"text\":\"Second step of B₂H₆ dissociative chemisorption, showing further decomposition of B₂H₅ and stabilization of B fragments on the surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Description|\\n|-----------|\\n| The H atoms of B₂H₆ interact with the pre-adsorbed H atoms on the H-covered Ti-terminated TiN (111) surface, forming H₂ that desorbs. The remaining B₂H₅ fragment binds to the surface at the hollow site formed by three Ti atoms (Site 4). |\"},{\"panel_id\":\"b\",\"text\":\"|Description|\\n|-----------|\\n| The subsequent reaction of B₂H₅ on the surface continues the decomposition mechanism, with further H removal and stabilization of B fragments on the Ti hollow sites. This completes the dissociative chemisorption pathway of B₂H₆ on the H-covered surface. |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The H-covered Ti-terminated TiN (111) surface has pre-adsorbed H atoms, which facilitate H₂ formation and desorption during B₂H₆ decomposition. The surface provides stable hollow sites for the adsorption and stabilization of B fragments, ensuring an energetically favorable pathway for the dissociative chemisorption of B₂H₆. This makes the surface effective for controlled decomposition reactions.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In the first step, H₂ desorbs and B₂H₅ binds to the surface. In the second step, further decomposition of B₂H₅ occurs, with stabilization of B fragments on the surface.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, During the first reaction step, H atoms from B₂H₆ react with surface H atoms to form H₂, which desorbs from the surface.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Adsorption site: three-fold hollow site formed by Ti atoms (Site 4), First reaction step: B₂H₅ fragment, H₂ desorption, Second reaction step: further B decomposition, stabilized B fragments\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_51_fig_7.jpg","caption":"Fig. 7 Dissociative chemisorption of $\\mathsf{B}_2\\mathsf{H}_6$ on the H-covered Ti-terminated TiN (111) surface: (a) the first reaction step (b) the second reaction step.","id":"test/atomic-layer-deposition/simulation-usecase/51/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/51/fig_7","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":658,"height":547,"image_format":"jpeg","image_sha256":"1d0ccabe2b94c75f0ef6a078051552a9238b29d7cf5fd108da6cfc4fc852aba3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":1,"width":652,"height":314},{"panel_id":"b","x":2,"y":334,"width":651,"height":209}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"First step of B₂H₆ dissociative chemisorption on the H-covered Ti-terminated TiN (111) surface, showing H atoms from B₂H₆ reacting with surface H atoms to form H₂ that desorbs, leaving B₂H₅ adsorbed. This step is exothermic.\"},{\"panel_id\":\"b\",\"text\":\"Second step of B₂H₆ dissociative chemisorption, showing a H atom from B₂H₅ reacting with a surface H atom to form H₂, further decomposing the adsorbed fragment. This step is nearly thermoneutral. Activation and reaction energies are provided for both steps.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | Activation Energy Ea (eV) | Reaction Energy Erxn (eV) | Description |\\n| --- | --- | --- | --- |\\n| 1st step | 0.87 | -0.38 | H atoms of B₂H₆ react with H atoms on the H-covered Ti-terminated TiN (111) surface; H₂ desorbs; B₂H₅ fragment binds to hollow site on the surface |\"},{\"panel_id\":\"b\",\"text\":\"| Reaction Step | Activation Energy Ea (eV) | Reaction Energy Erxn (eV) | Description |\\n| --- | --- | --- | --- |\\n| 2nd step | 1.07 | 0.04 | H atom of B₂H₅ reacts with H atom on surface; H₂ desorbs; further decomposition of B₂H₅ occurs |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Surface H atoms on the Ti-terminated TiN (111) surface interact directly with incoming B₂H₆ molecules, enabling controlled dissociation via H₂ desorption. This passivation ensures that decomposition occurs in defined steps, moderating reaction energetics and preventing uncontrolled B₂H₆ adsorption. Such stepwise control is crucial for atomic layer deposition processes where precise surface reactions determine film quality and uniformity.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first step has an activation energy of 0.87 eV, while the second step has a slightly higher activation energy of 1.07 eV.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The figure illustrates the first two reaction steps. Full decomposition may require additional steps beyond those shown.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Step 1: Erxn = -0.38 eV; H₂ desorption; B₂H₅ adsorbed on hollow site, Step 2: Erxn = 0.04 eV; H₂ desorption; further decomposition of B₂H₅ fragment\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_1.jpg","caption":"Figure 1. Optimized geometry for adsorption of $\\mathrm{HfX_4}$ molecule onto OH terminated $\\mathrm{HfO_2}$ . Terminal hydroxyl group (a), terminal oxygen (b), and bridging oxygen (c) are highlighted. The $\\mathrm{HfX_4}$ is anchored to a terminal oxygen (red = O, blue = N, white = H, large gray = Hf, small gray = C).","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_1","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":487,"height":436,"image_format":"jpeg","image_sha256":"5a5f62d0c9dae445a886f75287eff77d0e7a31a78f98de63ba2a953136e11575","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":487,"height":436}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure presents DFT-optimized geometries that illustrate how an HfX₄ precursor adsorbs on different oxygen sites of an OH-terminated HfO₂ surface. Three distinct adsorption configurations are shown: attachment to a terminal hydroxyl group (a), a terminal oxygen (b), and a bridging oxygen (c). The atomic species and bonding environment are explicitly visualized to reveal the preferred anchoring mode of the Hf precursor.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Studying the adsorption geometries on different oxygen sites helps determine how the HfX₄ precursor interacts with the surface, which influences reaction pathways and growth mechanisms in ALD. Each site—terminal OH, terminal O, and bridging O—offers distinct bonding environments that affect precursor activation, ligand exchange, and subsequent film formation. By comparing these configurations, researchers can identify the most favorable anchoring site and optimize surface chemistry for improved deposition efficiency and film quality.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A terminal oxygen atom.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Terminal hydroxyl group (a), Terminal oxygen (b), Bridging oxygen (c)\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_10.jpg","caption":"Figure 10. $\\mathrm{H}_2\\mathrm{O}$ molecule is not dissociated when there are not enough Lewis acid and base sites in terms of number; snapshots are from optimization.","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_10","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":959,"height":455,"image_format":"jpeg","image_sha256":"d92ebb4f437b873d717d4153895fd32b0e98e23eebf3e12c87e58577604ca8ae","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":16,"y":31,"width":454,"height":418},{"panel_id":"b","x":495,"y":37,"width":459,"height":415}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"the water molecule remains intact rather than dissociating, indicating that the surface lacks the required reactive sites to promote proton transfer or bond cleavage.\"},{\"panel_id\":\"b\",\"text\":\"the water molecule remains intact rather than dissociating, indicating that the surface lacks the required reactive sites to promote proton transfer or bond cleavage.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding water dissociation is critical because surface –OH formation and ligand removal govern the efficiency and uniformity of ALD growth. If water cannot dissociate, ligand elimination becomes incomplete, potentially leading to reduced surface reactivity, slower growth-per-cycle, and incorporation of undesired species. This directly affects film quality, density, and interface stability in high-κ applications.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In (a), H₂O remains adsorbed closer to the surface, while in (b) it is positioned slightly farther away, but in both cases the molecule stays intact.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the H₂O molecule does not dissociate on the surface under these conditions.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Lack of sufficient Lewis acid sites, Lack of sufficient Lewis base sites, Reduced ability of the surface to promote proton transfer\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_11.jpg","caption":"Figure 11. (a) Cluster of four HfX. (b) The upper-most oxygen originally adsorbed as $\\mathrm{H}_2\\mathrm{O}$ where red circles show typical OH and H from $\\mathrm{H}_2\\mathrm{O}$ dissociation. (c) Dissociation of HX from six coordinated Hf during the water pulse.","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_11","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_11","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":844,"height":272,"image_format":"jpeg","image_sha256":"5b4061979fc7a3d6be7e7f02ee2f1a5cdcf45dabd4be5d357c88ae87ea773658","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":14,"y":35,"width":262,"height":233},{"panel_id":"b","x":302,"y":25,"width":253,"height":245},{"panel_id":"c","x":573,"y":28,"width":267,"height":241}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows a cluster of four HfX precursors bonded to the hydroxylated HfO₂ surface.\"},{\"panel_id\":\"b\",\"text\":\"depicts the dissociation of an adsorbed H₂O molecule into OH and H fragments, highlighted by red circles, as coordination environments change.\"},{\"panel_id\":\"c\",\"text\":\"shows the subsequent dissociation of HfX from a six-coordinated Hf site (6 c.n.) and a five-coordinated Hf site (5 c.n.) during the water pulse.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reaction sequence in Figure provides key insights into the surface chemistry governing the PEALD growth of HfO₂. The initial arrangement of HfX precursors demonstrates how precursor clustering occurs before the water pulse. The dissociation of water into OH and H fragments highlights the activation of surface sites, which is essential for ligand removal and film densification. Finally, the detachment of HfX from different coordination environments illustrates how ligand elimination proceeds, enabling the formation of a stable oxide network. Together, these snapshots reveal the detailed mechanistic steps that drive the self-limiting ALD reaction, ultimately influencing film uniformity, density, and purity.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Panel (b) highlights a six-coordinated site (6 c.n.), whereas panel (c) highlights a five-coordinated site (5 c.n.).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the figure shows the dissociation of an H₂O molecule forming OH and H species on the HfO₂ surface.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Cluster of four HfX precursors adsorbed on the surface (panel a), Dissociation of adsorbed H₂O into OH and H fragments (panel b), Release/detachment of HfX from 6-coordinated and 5-coordinated Hf sites (panel c)\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_12.jpg","caption":"Figure 12. Dissociation of HX from seven coordinated hafnium during water pulse. Four oxygen (originally desorbed as $\\mathrm{H}_2\\mathrm{O}$ ) are coordinated to the cluster, and dissociation of HX from the resulting seven-coordinate Hf is more favorable than the situation in Figure 11.","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_12","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":948,"height":455,"image_format":"jpeg","image_sha256":"9f5a93ce6e1f9b161d5cfd3108f596946545a00790b2d94ac8ec8efa96af1eb0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":16,"y":64,"width":457,"height":389},{"panel_id":"b","x":501,"y":72,"width":442,"height":380}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"the Hf center initially maintains seven oxygen-based ligands.\"},{\"panel_id\":\"b\",\"text\":\"dissociation proceeds to form a six-coordinate Hf species. The highlighted coordination numbers illustrate how water-derived oxygen ligands stabilize the cluster and promote HX release.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The coordination environment of hafnium plays a critical role in determining the reactivity of surface species during the water pulse. In the seven-coordinated configuration, the presence of multiple oxygen ligands—derived from previously adsorbed water molecules—creates a more reactive environment that facilitates proton transfer and promotes HX dissociation. As the system transitions to a six-coordinated Hf, the reduced ligand density reflects successful removal of HX and progression of the reaction cycle. This coordination-driven reactivity directly impacts film growth efficiency, surface regeneration, and the overall self-limiting nature of the PEALD process.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Panel (a) shows a seven-coordinated Hf center, while panel (b) shows a six-coordinated Hf center after HX dissociation.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Presence of four oxygen atoms originally adsorbed as H₂O, Higher coordination stabilizing the intermediate, Increased availability of labile ligands for proton transfer, Reduced structural strain supporting HX elimination\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_2.jpg","caption":"Figure 2. Rotation of protonated ligand from $\\mathrm{Hf(H_{up}X)(H_{up}X)(H_{up}X)}$ to $\\mathrm{Hf(H_{up}X)(H_{up}X)(H_{up}X)X,X = N(CH_{2})_{2}}$ where the \"dn\" (a) and \"up\" (c) show the orientation of the proton on nitrogen relative to the surface. The saddle point is indicated in (b).","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":847,"height":264,"image_format":"jpeg","image_sha256":"a735c9ad8eb0cd3a2183614f6732a29ea22583f825c1a0eadd2f0a9921c5c948","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":10,"width":274,"height":253},{"panel_id":"b","x":291,"y":6,"width":273,"height":255},{"panel_id":"c","x":572,"y":11,"width":273,"height":251}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows the ligand in the “down” orientation and illustrates the rotational mechanism of a protonated ligand around a hafnium center on the HfO₂ surface\"},{\"panel_id\":\"b\",\"text\":\"captures the transition-state saddle point during rotation\"},{\"panel_id\":\"c\",\"text\":\"shows the ligand adopting the “up” orientation. These snapshots highlight how proton orientation on nitrogen changes relative to the surface during rotation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding the rotation of protonated ligands around surface-bound hafnium atoms is crucial because such motions directly influence the accessibility of reactive sites and the progression of surface reactions during ALD and PEALD processes. Proton orientation affects hydrogen bonding, ligand stability, and the likelihood of ligand exchange or elimination reactions, all of which determine growth-per-cycle, film uniformity, and the formation of by-products. Therefore, visualizing transition states and orientation changes helps clarify the mechanistic pathways that control thin-film deposition behavior at the atomic level.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The transition-state saddle point appears in panel (b).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"a Ligand positioned in the “down” orientation with proton directed toward the surface, b Ligand reaches a saddle point where the proton orientation and ligand geometry begin to shift, c Ligand completes rotation, adopting the “up” orientation with the proton facing away from the surface.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_3.jpg","caption":"Figure 3. Highlighted proton diffuses from nitrogen to the topmost nitrogen. The saddle point is indicated in the middle snapshot (b).","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_3","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":847,"height":280,"image_format":"jpeg","image_sha256":"85fd8ee167ce4ddd6086df18a26c26cc6122a591120498c388ac83dbcc13660b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":12,"y":20,"width":269,"height":259},{"panel_id":"b","x":296,"y":8,"width":266,"height":271},{"panel_id":"c","x":577,"y":16,"width":265,"height":260}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows the initial proton position and diffusion of a proton between nitrogen atoms on a surface-bound ligand.\"},{\"panel_id\":\"b\",\"text\":\"highlights the saddle point along the migration pathway\"},{\"panel_id\":\"c\",\"text\":\"depicts the final proton-shifted configuration. These snapshots represent key stages in the proton transfer mechanism obtained from structural optimization.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding proton diffusion is essential because it directly influences the stability, reactivity, and ligand dynamics of surface-bound Hf complexes during deposition or surface reactions. Proton transfer affects surface coordination states, determines the energetics of reaction pathways, and impacts the overall mechanism of film growth in processes such as ALD/PEALD. Insight into saddle points and final proton configurations helps predict reaction barriers and optimize processing conditions.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Panel b shows the proton at the saddle point.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The figure shows sequential snapshots (a → b → c) representing the stages of proton transfer.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Change in N–H bonding position, Shift in proton orientation relative to the surface, Identification of a saddle point where bond rearrangement is underway\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_4.jpg","caption":"Figure 4. $\\mathrm{Hf(H_{up}X)(H_{dn}X)(H_{dn}X)(H_{dn}X)}$ precursor at the surface. Because of multiple proton diffusion, the topmost bond between $\\mathrm{Hf - N}$ is stretched. Red circles show the diffused protons from the surface to the nitrogen.","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_4","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":670,"height":561,"image_format":"jpeg","image_sha256":"5aeb0cce8c40c1ed628b6287c25fa8ac752527c4ad0a36a1102612c5b6b633b8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":670,"height":561}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"the figure illustrates the adsorption of the Hf(H_upX)(H_dnX)(H_dnX)(H_dnX) precursor on an OH-terminated HfO₂ surface, highlighting multiple proton-diffusion events from the substrate to the precursor ligands. Red circles mark the locations of diffused protons, showing how proton transfer stretches the topmost Hf–N bond and alters precursor binding geometry.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Proton diffusion plays a critical role in modifying precursor binding and reaction pathways during ALD processes. As shown in the figure, multiple protons migrate from the HfO₂ surface to the precursor’s nitrogen atoms, weakening and stretching the Hf–N bond. This protonation alters the precursor’s coordination environment, potentially enhancing ligand removal, facilitating precursor decomposition, and improving film growth uniformity. Understanding this proton-mediated reactivity helps optimize precursor design and pulse conditions for controlled surface reactions in plasma-enhanced ALD.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The topmost Hf–N bond i s stretched as a result of proton diffusion to the precursor.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the red circles indicate protons that have diffused from the surface to the nitrogen atoms of the precursor.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Diffused protons originating from the HfO₂ surface, Protonated sites on the precursor ligands, Interaction points between surface oxygen and precursor nitrogen atoms\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_5.jpg","caption":"Figure 5. $\\mathrm{Hf(H_{up}X)(H_{up}X)(H_{dn}X)X}$ precursor at the hafnium oxide surface. The topmost HX is dissociating from hafnium during ab initio MD calculation. Red circles show the diffused protons from surface to the ligands.","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_5","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":675,"height":636,"image_format":"jpeg","image_sha256":"b70fda6b65f66db1e084db46c97e59d5a7036eb941016e73438da6c38b1f94b1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":636}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"this figure shows the Hf(H_upX)(H_upX)(H_dnX)(H_dnX) precursor interacting with a hafnium oxide surface during an ab initio MD simulation. The topmost ligand is dissociating from the hafnium center, while multiple protons diffuse from the surface to the precursor ligands. The red circles highlight these diffused protons and indicate active sites where proton transfer is altering the coordination environment of the precursor.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Proton diffusion significantly affects ligand stability and precursor reactivity during ALD processes. As protons migrate from the hafnium oxide surface to the precursor ligands, they weaken the Hf–N bonds and facilitate the dissociation of the topmost HX ligand. This proton-driven activation enhances ligand removal and helps drive surface reactions toward film formation. Understanding these proton transfer events is crucial for optimizing precursor design, improving plasma-assisted ALD efficiency, and achieving better control over surface chemistry and film quality.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The red circles indicate protons diffusing from the hafnium oxide surface to the precursor ligands.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the figure shows the topmost HX ligand dissociating from the hafnium atom during ab initio MD simulation.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Diffused protons transferred from the surface, The dissociating HX ligand, The hafnium center with multiple coordinated ligands, Protonation sites on nitrogen atoms of the precursor\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_6.jpg","caption":"Figure 6. Snapshots from optimization of $\\mathrm{Hf(H_{up}X)(H_{up}X)(H_{up}X)(H_{up}X)}$ configuration. Hf moves down into the surface and becomes strongly attached to a total of four O atoms in the surface as 2HX desorbs.","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_6","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":961,"height":934,"image_format":"jpeg","image_sha256":"f403e4c8e53627cbf91e0f58f8fa877bbc4f12d728fe7535535a07663bb60216","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":11,"y":5,"width":460,"height":446},{"panel_id":"b","x":494,"y":5,"width":461,"height":448},{"panel_id":"c","x":11,"y":473,"width":460,"height":435},{"panel_id":"d","x":499,"y":470,"width":457,"height":435}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"showing the evolution of the Hf(H_upX)(H_upX)(H_dnX)(H_upX) precursor on the HfO₂ surface. As the precursor relaxes during optimization, the Hf atom progressively moves deeper into the surface and forms stronger bonding interactions with up to four surface oxygen atoms. Meanwhile, two HX ligands desorb, demonstrating how surface coordination drives ligand elimination and stabilizes the adsorbed configuration.\"},{\"panel_id\":\"b\",\"text\":\"showing the evolution of the Hf(H_upX)(H_upX)(H_dnX)(H_upX) precursor on the HfO₂ surface. As the precursor relaxes during optimization, the Hf atom progressively moves deeper into the surface and forms stronger bonding interactions with up to four surface oxygen atoms. Meanwhile, two HX ligands desorb, demonstrating how surface coordination drives ligand elimination and stabilizes the adsorbed configuration.\"},{\"panel_id\":\"c\",\"text\":\"showing the evolution of the Hf(H_upX)(H_upX)(H_dnX)(H_upX) precursor on the HfO₂ surface. As the precursor relaxes during optimization, the Hf atom progressively moves deeper into the surface and forms stronger bonding interactions with up to four surface oxygen atoms. Meanwhile, two HX ligands desorb, demonstrating how surface coordination drives ligand elimination and stabilizes the adsorbed configuration.\"},{\"panel_id\":\"d\",\"text\":\"showing the evolution of the Hf(H_upX)(H_upX)(H_dnX)(H_upX) precursor on the HfO₂ surface. As the precursor relaxes during optimization, the Hf atom progressively moves deeper into the surface and forms stronger bonding interactions with up to four surface oxygen atoms. Meanwhile, two HX ligands desorb, demonstrating how surface coordination drives ligand elimination and stabilizes the adsorbed configuration.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding the structural progression from (a) to (d) reveals how the Hf precursor interacts with and binds to the HfO₂ surface during ALD. The increasing Hf–O coordination and ligand detachment indicate the key chemical steps responsible for film nucleation. This provides valuable insight into precursor efficiency, ligand removal mechanisms, and how the surface chemistry affects overall ALD growth performance.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Configuration (d) shows the strongest binding interaction.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Gradual downward movement of the Hf atom, Increased coordination with surface oxygen atoms, Progressive detachment of HX ligands, Formation of a more stable surface-anchored configuration\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_7.jpg","caption":"Figure 7. By densification, the c.n. of Hf in the precursor is increased as $\\mathrm{HfX}_2$ becomes strongly attached to three oxygen atoms at the surface. Snapshots are from ab initio MD at $T = 500\\mathrm{K}$ for $0.4\\mathrm{ps}$","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_7","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":950,"height":909,"image_format":"jpeg","image_sha256":"96ea7860cf0202f62af64223f160837845d37f162e4f4c6477ddebee2f27d986","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":23,"width":459,"height":411},{"panel_id":"b","x":491,"y":46,"width":451,"height":390},{"panel_id":"c","x":12,"y":496,"width":445,"height":407},{"panel_id":"d","x":508,"y":519,"width":432,"height":380}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Hf initially bonds to only three oxygen atoms (3 c.n.). As the simulation progresses through\"},{\"panel_id\":\"b\",\"text\":\"the precursor moves deeper into the surface environment.\"},{\"panel_id\":\"c\",\"text\":\"the precursor moves deeper into the surface environment.\"},{\"panel_id\":\"d\",\"text\":\"the coordination number increases to five (5 c.n.), indicating that the precursor becomes strongly anchored to the HfO₂ surface under MD conditions at 500 K.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the Hf coordination number enhances the precursor’s anchoring strength to the oxide surface, promoting better surface saturation and improved densification during MD conditions. As a result, the resulting HfO₂ film becomes denser, more uniform, and structurally more stable, which improves its performance as a high-k dielectric. This stronger bonding also reduces defect sites, ultimately contributing to higher-quality thin films in ALD/PEALD applications.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"(a), Hf shows 3-fold coordination, while in (d), it increases to 5-fold coordination.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hf moves deeper toward the oxide surface, Additional Hf–O bonds are formed, Ligand orientation shifts to allow stronger attachment, Surface oxygen atoms become more engaged with the precursor.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_8.jpg","caption":"Figure 8. Optimized $\\mathrm{Hf(H_2X)(H_{up}X)}$ attached to three oxygen atoms at the surface where the \"dn\" and \"up\" show the orientation of the proton on nitrogen relative to the surface.","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_8","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":470,"height":403,"image_format":"jpeg","image_sha256":"4f21c2a0c4fd66309975a334c82328fda9765e5f27a1612a99762edb8dbd641c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":470,"height":403}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"the figure shows the optimized configuration of a Hf(H_dnX)(H_upX) precursor bonded to three surface oxygen atoms on HfO₂. The labeled “up” and “dn” positions indicate the two possible orientations of the proton on the nitrogen atom relative to the surface, illustrating how proton directionality affects precursor–surface interaction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding proton orientation provides insight into how ligands interact with surface oxygens during precursor adsorption. The “up” and “dn” proton positions can influence ligand stability, reaction pathways, and the likelihood of proton transfer or ligand dissociation. This knowledge helps optimize precursor design for improved reactivity, lower activation barriers, and better control over film uniformity in ALD processes. Ultimately, such insights contribute to more efficient deposition cycles and higher-quality oxide films.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They indicate the two possible orientations of the proton on the nitrogen atom—either pointing upward (“up”) or downward (“dn”) relative to the surface.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Proton orientation on the nitrogen atom (“up” vs. “dn”), Number of oxygen atoms coordinated to Hf (three oxygen atoms), Local surface geometry and available binding sites, Hydrogen diffusion and bonding environment around nitrogen\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_9.jpg","caption":"Figure 9. Amide group of the densified $\\mathrm{HfX}_2$ was transferred to under-coordinated hafnium at the surface; snapshots are from ab initio MD calculation, starting at $T = 500\\mathrm{K}$ and running for $0.4\\mathrm{ps}$ .","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_9","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":970,"height":934,"image_format":"jpeg","image_sha256":"e947d7c4ffac6d35eee0124bee99e2dfcbc8e04ea188352ac6ba78fecb52d368","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":15,"y":5,"width":461,"height":440},{"panel_id":"b","x":510,"y":31,"width":440,"height":409},{"panel_id":"c","x":20,"y":508,"width":458,"height":417},{"panel_id":"d","x":513,"y":511,"width":446,"height":416}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows four ab initio MD illustrating the transfer of the amide group of the densified HfX₂ precursor to an under-coordinated hafnium atom at the HfO₂ surface. The panels capture the dynamic progression of ligand rearrangement and bonding as the system evolves at 500 K over 0.4 ps. These configurations highlight surface–ligand interactions central to precursor behavior.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows four ab initio MD illustrating the transfer of the amide group of the densified HfX₂ precursor to an under-coordinated hafnium atom at the HfO₂ surface. The panels capture the dynamic progression of ligand rearrangement and bonding as the system evolves at 500 K over 0.4 ps. These configurations highlight surface–ligand interactions central to precursor behavior.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows four ab initio MD illustrating the transfer of the amide group of the densified HfX₂ precursor to an under-coordinated hafnium atom at the HfO₂ surface. The panels capture the dynamic progression of ligand rearrangement and bonding as the system evolves at 500 K over 0.4 ps. These configurations highlight surface–ligand interactions central to precursor behavior.\"},{\"panel_id\":\"d\",\"text\":\"The figure shows four ab initio MD illustrating the transfer of the amide group of the densified HfX₂ precursor to an under-coordinated hafnium atom at the HfO₂ surface. The panels capture the dynamic progression of ligand rearrangement and bonding as the system evolves at 500 K over 0.4 ps. These configurations highlight surface–ligand interactions central to precursor behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding the amide transfer mechanism is crucial because it reveals how precursor ligands interact with under-coordinated metal atoms on oxide surfaces during growth. This directly influences film quality, ligand removal efficiency, and surface reactivity, all of which are key parameters in ALD and PEALD. The snapshots in Figure demonstrate the dynamic behavior of the precursor under realistic thermal conditions, showing how ligands detach, reorganize, and attach to surface sites. Such mechanistic insight helps in designing more efficient precursors with improved volatility, reactivity, and cleanliness of by-products, ultimately enabling better control over film uniformity and composition.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Panel (a) represents the initial configuration, while panel (d) shows the advanced stage where the amide group is coordinated to the under-coordinated Hf.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Partial detachment of the amide group from the precursor, Increasing interaction between the amide nitrogen and under-coordinated surface Hf, Reorganization of coordination bonds around the surface Hf atom, Gradual stabilization of the ligand in the final configuration.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_18_fig_2.jpg","caption":"FIG. 2. Structural formulas of the keto tautomers of Hhfac (a) and Hacac (b).","id":"test/atomic-layer-etching/experimental-usecase/18/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/18/fig_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":650,"height":142,"image_format":"jpeg","image_sha256":"e4c4f8512bc1b90f0f3dd6975542c612226301b217a42b2f0a40b9231b1c4fc6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":6,"width":307,"height":135},{"panel_id":"b","x":338,"y":7,"width":309,"height":132}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_10_figure_1.jpg","caption":"Figure 1. (a) Top and (b) side views of the most stable O-covered W(3 1 0) surface. The blue region indicates the atoms used in the DFPT calculation. The top W atoms coordinated by more than two O atoms, highlighted in the top region, are lifted out of their lattice positions due to the formation of $\\mathrm{W} - \\mathrm{O}$ bonds. The color coding is as follows: $\\mathrm{W} =$ gray, $\\mathrm{O} =$ red.","id":"test/atomic-layer-etching/simulation-usecase/10/figure_1","sample_id":"atomic-layer-etching/simulation-usecase/10/figure_1","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/Mechanism of Thermal Atomic Layer Etch of W Metal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":544,"height":305,"image_format":"jpeg","image_sha256":"09fe185c9e53380a810c8b9fb5d0da99520530fb623ba7e43d1d00799fe7b4ed","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":2,"width":279,"height":303},{"panel_id":"b","x":256,"y":5,"width":286,"height":297}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_10_figure_2.jpg","caption":"Figure 2. The top and side views of dissociated $\\Omega_2$ molecules on the $\\mathbb{W}(3\\textbf{1} 0)$ surface at atop sites, bridge sites, alternate bridge sites, 3- fold sites, 4-fold sites, and subsurface sites are shown in a),b,c) d,e,and f) respectively. The color coding is as follows: $\\mathbb{W} =$ gray, $\\mathrm{O} =$ red.","id":"test/atomic-layer-etching/simulation-usecase/10/figure_2","sample_id":"atomic-layer-etching/simulation-usecase/10/figure_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/Mechanism of Thermal Atomic Layer Etch of W Metal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":520,"height":614,"image_format":"jpeg","image_sha256":"228529b03c531dfa132efcf5a1d1d79e7e4efa1f627e304c6e66e97fa7f390f3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":520,"height":614}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_10_figure_3.jpg","caption":"Figure 3. Snapshots (X1–X3) from MD simulation of two $\\mathrm{WCl}_6$ molecules adsorbed on the $\\mathrm{WO}_x$ surface along with the evolution of distances between the dissociated Cl atom and the donor/acceptor W atoms. The inset graph shows the distances and single-point DFT energies of the snapshots (relative to that of snapshot 322, X1) during the bond dissociation. The color coding is as follows: $\\mathrm{W} =$ gray, $\\mathrm{O} =$ red, and $\\mathrm{Cl} =$ green.","id":"test/atomic-layer-etching/simulation-usecase/10/figure_3","sample_id":"atomic-layer-etching/simulation-usecase/10/figure_3","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/Mechanism of Thermal Atomic Layer Etch of W Metal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":859,"height":1014,"image_format":"jpeg","image_sha256":"01a0c4b000212c1c9091f4b3960e601c04dc1d7edfadbbf465022d082056769b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":5,"width":847,"height":341},{"panel_id":"b","x":4,"y":354,"width":853,"height":654}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_12_figure_2.jpg","caption":"Figure 2. (a and $\\mathbf{a}^{\\prime}$ ) Equilibrium geometry of bulk $\\theta -\\mathrm{Al}_2\\mathrm{O}_3$ along the $a - c$ lattice plane in panel a along with the valence charge density as yellow spheres in panel $\\mathbf{a}^{\\prime}$ .The Al atoms marked with labels $\\mathrm{(Al1 - }$ Al4) are found in tetrahedral coordination sites of the oxygen lattice, while those that are not marked are in octahedral coordination sites. The isosurface value is set to $0.2\\mathrm{e} / \\mathrm{\\AA}^3$ b and $\\mathbf{b}^{\\prime}$ Optimized geometry of the $\\mathrm{Al}_2\\mathrm{O}_3$ $(\\overline{2} 01)$ surface slab in panel b along with the valence charge density in panel $\\mathbf{b}^{\\prime}$ . The isosurface value is set to 0.25 $\\mathrm{e} / \\mathrm{\\AA}^3$ .It can be seen that the electrons are localized around the O atoms, which is an indication of predominantly ionic bonding between Al and O.","id":"test/atomic-layer-etching/simulation-usecase/12/figure_2","sample_id":"atomic-layer-etching/simulation-usecase/12/figure_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":672,"height":511,"image_format":"jpeg","image_sha256":"4a5c4195092f4dd46ff706552d73f8c075a8f59350b39fe059b68300618570bc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":17,"y":24,"width":297,"height":157},{"panel_id":"b","x":378,"y":22,"width":289,"height":154},{"panel_id":"c","x":10,"y":242,"width":308,"height":267},{"panel_id":"d","x":377,"y":242,"width":292,"height":267}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Ball-and-stick model of bulk θ-Al₂O₃ viewed along the a–c lattice plane. Labeled Al atoms (Al1–Al4) occupy tetrahedral coordination sites, while unlabeled Al atoms are in octahedral coordination within the oxygen framework.\"},{\"panel_id\":\"b\",\"text\":\"Optimized atomic geometry of the θ-Al₂O₃ (2̄01) surface slab used in DFT calculations, highlighting the surface atomic arrangement relative to the bulk lattice.\"},{\"panel_id\":\"c\",\"text\":\"Valence charge density of bulk θ-Al₂O₃ visualized as yellow isosurfaces (0.20 e/ų), showing strong electron localization around oxygen atoms.\"},{\"panel_id\":\"d\",\"text\":\"Valence charge density of the θ-Al₂O₃ (2̄01) surface (isosurface = 0.25 e/ų), indicating that electron localization around oxygen atoms is largely preserved at the surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Electron density remains strongly localized around oxygen atoms, similar to the bulk.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The charge density is strongly concentrated around oxygen atoms, with minimal electron density shared between aluminum and oxygen. This spatial separation indicates that bonding in θ-Al₂O₃ is predominantly ionic rather than covalent. The visualization directly supports the interpretation of Al as a cation embedded in an oxygen-dominated electron cloud.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The (2̄01) surface exposes atomic coordination environments that differ from the bulk, including under-coordinated Al and O sites. These surface-specific geometries are where adsorption, fluorination, and ligand-exchange reactions occur during ALE. Modeling this surface therefore captures the chemically active structure relevant to etching mechanisms.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_12_figure_4.jpg","caption":"Figure 4. (a) Pictorial representation of the pathway between minima $\\mathrm{M}_{\\mathrm{B}}^{\\mathrm{I}}$ and $\\mathrm{M}_{\\mathrm{D}}^{\\mathrm{I}}$ that shows an aggregate of all $\\mathrm{H}$ atom positions as the $\\mathrm{H}$ atom hops from one surface $\\mathrm{O}$ atom to another $\\mathrm{O}$ atom in the adjacent row. (b) Similarly, for the pathway between minima $\\mathrm{M}_{\\mathrm{D}}^{\\mathrm{I}}$ and $\\mathrm{M}_{\\mathrm{C}}^{\\mathrm{I}}$ . Three images are chosen between the two minima and are optimized within the CI-NEB approach. (c) The graph shows the energy difference of the images with respect to $\\mathrm{M}_{\\mathrm{B}}^{\\mathrm{I}}$ and the energy barriers with respect to panels a and b. Here, $\\mathrm{TS}_{\\mathrm{BD}}^{\\mathrm{I}}$ and $\\mathrm{TS}_{\\mathrm{DC}}^{\\mathrm{I}}$ represent the transition states connecting $\\mathrm{M}_{\\mathrm{B}}^{\\mathrm{I}} - \\mathrm{M}_{\\mathrm{D}}^{\\mathrm{I}}$ and $\\mathrm{M}_{\\mathrm{D}}^{\\mathrm{I}} - \\mathrm{M}_{\\mathrm{C}}^{\\mathrm{I}}$ , respectively.","id":"test/atomic-layer-etching/simulation-usecase/12/figure_4","sample_id":"atomic-layer-etching/simulation-usecase/12/figure_4","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":923,"height":497,"image_format":"jpeg","image_sha256":"693afaf7510788e67c9be35ecbd5507d72a7f92cd2b635fadfef61e9b52ea99b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":14,"width":333,"height":212},{"panel_id":"b","x":12,"y":307,"width":329,"height":187},{"panel_id":"c","x":412,"y":70,"width":503,"height":420}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_12_figure_5.jpg","caption":"Figure 5. Spontaneous dissociative adsorption of a HF molecule on the $\\theta -\\mathrm{Al}_2\\mathrm{O}_3$ (2 0 1) surface. Snapshots taken from geometry optimization run where geometry a is the chosen starting geometry with the HF molecule at least $3.0 \\mathrm{\\AA}$ from the surface. The HF molecule hydrogen bonds to a surface $\\mathrm{O}$ atom in geometry b. The onset of the HF dissociation is given in geometry c. The completely dissociated HF forming $-\\mathrm{Al} - \\mathrm{F}$ and $-\\mathrm{O} - \\mathrm{H}$ species at the surface can be seen in geometry d. Final optimized geometry $\\mathrm{M}_{\\mathrm{B}}^{\\mathrm{I}}$ is shown in geometry e. Panel f shows the total energy of the system relative to the starting geometry (a) for the optimization steps along with the changes in $\\mathrm{Al} - \\mathrm{F}$ , $\\mathrm{H} - \\mathrm{F}$ , and $\\mathrm{O} - \\mathrm{H}$ bond distances.","id":"test/atomic-layer-etching/simulation-usecase/12/figure_5","sample_id":"atomic-layer-etching/simulation-usecase/12/figure_5","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":678,"height":475,"image_format":"jpeg","image_sha256":"09b9d606fac06e4c27b3850e78f3e641a4301dc2680ac44944939b3d6dd0ee6e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":16,"y":29,"width":128,"height":70},{"panel_id":"b","x":17,"y":122,"width":124,"height":74},{"panel_id":"c","x":17,"y":223,"width":124,"height":66},{"panel_id":"d","x":22,"y":313,"width":116,"height":75},{"panel_id":"e","x":17,"y":391,"width":142,"height":80},{"panel_id":"f","x":206,"y":43,"width":467,"height":402}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_12_figure_7.jpg","caption":"Figure 7. Optimized geometries of $2 - 26 \\mathrm{HF}$ molecules adsorbed on the bare $\\mathrm{Al}_{2}\\mathrm{O}_{3}$ $(\\overline{2} 0 1)$ surface. Here, $\\mathrm{M}_{\\mathrm{B}}^{\\mathrm{X}}$ denotes a minimum with $X \\mathrm{HF}$ molecules, and in case there are several minima, they are indexed with a label Y. In some cases, multiple minima are shown to convey the fact that very different stable configurations are possible. In most of the minimum geometries shown above, a mixed dissociative and molecular adsorption of HF molecules can be seen.","id":"test/atomic-layer-etching/simulation-usecase/12/figure_7","sample_id":"atomic-layer-etching/simulation-usecase/12/figure_7","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"},{"panel_id":"h","label":"molecular structure diagram"},{"panel_id":"i","label":"molecular structure diagram"},{"panel_id":"j","label":"molecular structure diagram"},{"panel_id":"k","label":"molecular structure diagram"},{"panel_id":"l","label":"molecular structure diagram"},{"panel_id":"m","label":"molecular structure diagram"},{"panel_id":"n","label":"molecular structure diagram"},{"panel_id":"o","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":845,"height":1059,"image_format":"jpeg","image_sha256":"effd7329dd531cfca00ea8875650a50a211928f6b9cf38db324f726499025bb3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":12,"y":13,"width":231,"height":163},{"panel_id":"b","x":307,"y":12,"width":232,"height":163},{"panel_id":"c","x":619,"y":4,"width":206,"height":169},{"panel_id":"d","x":13,"y":222,"width":222,"height":169},{"panel_id":"e","x":303,"y":218,"width":237,"height":179},{"panel_id":"f","x":601,"y":218,"width":243,"height":174},{"panel_id":"g","x":13,"y":435,"width":234,"height":172},{"panel_id":"h","x":595,"y":433,"width":239,"height":176},{"panel_id":"i","x":306,"y":445,"width":228,"height":164},{"panel_id":"j","x":296,"y":642,"width":252,"height":182},{"panel_id":"k","x":597,"y":646,"width":236,"height":180},{"panel_id":"l","x":13,"y":640,"width":232,"height":180},{"panel_id":"m","x":13,"y":864,"width":243,"height":194},{"panel_id":"n","x":306,"y":866,"width":245,"height":192},{"panel_id":"o","x":588,"y":868,"width":256,"height":190}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Optimized adsorption geometry for two HF molecules (M²_A) on θ-Al₂O₃, showing dissociative adsorption with F bound to surface Al sites and H transferred to surface oxygen atoms.\"},{\"panel_id\":\"b\",\"text\":\"Alternative local minimum for two HF molecules (M²_B), illustrating a different dissociative configuration arising from surface site heterogeneity.\"},{\"panel_id\":\"c\",\"text\":\"Third stable configuration for two HF molecules (M²_C), highlighting the presence of multiple energetically comparable minima at low HF coverage.\"},{\"panel_id\":\"d\",\"text\":\"Optimized geometry for three HF molecules (M³), showing increased surface coverage with continued preference for dissociative adsorption.\"},{\"panel_id\":\"e\",\"text\":\"Five-HF adsorption configuration (M⁵), where dissociative adsorption remains dominant but intermolecular interactions between adsorbed species begin to emerge.\"},{\"panel_id\":\"f\",\"text\":\"Eight-HF adsorption configuration (M⁸_A), illustrating a relatively dispersed arrangement of HF-derived species across the surface.\"},{\"panel_id\":\"g\",\"text\":\"Alternative eight-HF minimum (M⁸_B), showing a more clustered adsorption motif and highlighting configurational diversity at the same coverage.\"},{\"panel_id\":\"h\",\"text\":\"Twelve-HF adsorption configuration (M¹²), where surface active sites are increasingly saturated and mixed dissociative–molecular adsorption becomes apparent.\"},{\"panel_id\":\"i\",\"text\":\"Fifteen-HF adsorption configuration (M¹⁵), demonstrating pronounced coexistence of molecularly adsorbed HF with dissociated H/F species due to surface saturation.\"},{\"panel_id\":\"j\",\"text\":\"Sixteen-HF adsorption configuration (M¹⁶), showing further crowding of the surface and increased stabilization of molecular HF through hydrogen-bonding networks.\"},{\"panel_id\":\"k\",\"text\":\"Eighteen-HF adsorption configuration (M¹⁸), where molecular adsorption becomes increasingly favorable as dissociative sites are exhausted.\"},{\"panel_id\":\"l\",\"text\":\"Twenty-two-HF adsorption configuration (M²²), highlighting dense surface coverage with extensive intermolecular interactions among HF-derived species.\"},{\"panel_id\":\"m\",\"text\":\"Twenty-four-HF adsorption configuration (M²⁴_A), representing a highly saturated surface with limited additional dissociation.\"},{\"panel_id\":\"n\",\"text\":\"Alternative twenty-four-HF minimum (M²⁴_B), illustrating another stable arrangement at near-maximum coverage.\"},{\"panel_id\":\"o\",\"text\":\"Twenty-six-HF adsorption configuration (M²⁶), corresponding to the highest HF coverage shown, dominated by molecular adsorption stabilized by surface and intermolecular interactions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"},{\"panel_id\":\"h\",\"text\":\"\"},{\"panel_id\":\"i\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Dissociative adsorption dominates.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As coverage increases, HF molecules compete for a limited number of reactive sites. This leads to multiple locally stable arrangements with similar energies, especially at intermediate coverages, increasing configurational diversity.\"}]},{\"panel_id\":\"o\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ALE processes often involve repeated HF exposure under conditions where surface saturation can occur. High-coverage adsorption influences fluorination efficiency, surface passivation, and reaction self-limitation. Accurately capturing these regimes is therefore essential for predictive ALE models.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Because the surface contains chemically inequivalent adsorption sites.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_12_figure_9.jpg","caption":"Figure 9. (a-e) Snapshots representing the hydrogen transport mechanism observed in the optimization of two HF molecules adsorbed on the alumina surface to form $\\mathbf{M}_{\\mathrm{C}}^{2}$ . (f) Complementary graph showing the trends of important interatomic distances and relative energy with respect to the initial geometry.","id":"test/atomic-layer-etching/simulation-usecase/12/figure_9","sample_id":"atomic-layer-etching/simulation-usecase/12/figure_9","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":675,"height":486,"image_format":"jpeg","image_sha256":"821ae8ef13ca5f31119684bd000cc99de5858147f1f0147f1394e63555b6bc53","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":14,"y":7,"width":188,"height":149},{"panel_id":"b","x":28,"y":162,"width":178,"height":67},{"panel_id":"c","x":27,"y":236,"width":176,"height":72},{"panel_id":"d","x":29,"y":317,"width":172,"height":77},{"panel_id":"e","x":34,"y":408,"width":166,"height":76},{"panel_id":"f","x":241,"y":99,"width":432,"height":376}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_14_fig5.jpg","caption":"Fig.5. t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t a damaged region of the etched surface.","id":"test/atomic-layer-etching/simulation-usecase/14/fig5","sample_id":"atomic-layer-etching/simulation-usecase/14/fig5","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"multiple line chart"},{"panel_id":"e","label":"multiple line chart"},{"panel_id":"f","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/images/fig5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/images/fig5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/Molecular dynamics simulations of silicon nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1367,"height":1475,"image_format":"jpeg","image_sha256":"d6f8afd1b3774b69fb6de6c7a93fbe02086a2eec0f408cb587abd063d14686c1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":18,"width":477,"height":640},{"panel_id":"b","x":511,"y":18,"width":384,"height":611},{"panel_id":"c","x":962,"y":24,"width":396,"height":581},{"panel_id":"d","x":24,"y":736,"width":428,"height":720},{"panel_id":"e","x":484,"y":738,"width":428,"height":717},{"panel_id":"f","x":944,"y":738,"width":423,"height":717}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_18_fig_5.jpg","caption":"FIG. 5. Relaxed adsorption structures for one HF molecule interacting with the bare surface of $\\mathrm{aHfO_2}$ for a 1HF A, b 1HF B, and c 1HF C. The color coding is brown $= \\mathrm{Hf}$ red $= \\mathrm{O}$ white $= \\mathrm{H}$ and blue $= \\mathrm{F}$ .","id":"test/atomic-layer-etching/simulation-usecase/18/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/18/fig_5","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/Origin of enhanced thermal atomic layer etching of amorphous HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1000,"height":264,"image_format":"jpeg","image_sha256":"32e2ad95457396a6e23c33e145f6e2a9be4e65807905c4747e1a519bce4d5951","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":46,"width":326,"height":211},{"panel_id":"b","x":338,"y":48,"width":327,"height":211},{"panel_id":"c","x":675,"y":43,"width":324,"height":214}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_18_fig_6.jpg","caption":"FIG. 6. Relaxed geometries for HF coverages (a) 2HF B, (b) 2HF C, (c) 3HF B, (d) 3HF C, (e) 4HF B, and (f) 5HF A of amorphous $\\mathrm{HfO_2}$ were complete dissociation of HF occurred spontaneously. Color coding is the same as in Fig. 5.","id":"test/atomic-layer-etching/simulation-usecase/18/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/18/fig_6","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/Origin of enhanced thermal atomic layer etching of amorphous HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1017,"height":503,"image_format":"jpeg","image_sha256":"0eb855167925de9a7313afd432f050c0355342d46ac1a0ed352b5fbc5033c708","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":55,"width":338,"height":190},{"panel_id":"b","x":351,"y":56,"width":324,"height":185},{"panel_id":"c","x":692,"y":61,"width":317,"height":185},{"panel_id":"d","x":11,"y":312,"width":326,"height":185},{"panel_id":"e","x":344,"y":314,"width":330,"height":185},{"panel_id":"f","x":681,"y":331,"width":323,"height":167}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_18_fig_8.jpg","caption":"FIG. 8. Relaxed geometries for HF coverages (a) 5HF C, (b) 8HF C, and (c) 16HF A were $\\mathrm{H}_2\\mathrm{O}$ formed spontaneous. Color coding is the same as in Fig. 5.","id":"test/atomic-layer-etching/simulation-usecase/18/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/18/fig_8","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/Origin of enhanced thermal atomic layer etching of amorphous HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1009,"height":211,"image_format":"jpeg","image_sha256":"6e50395420ca5127b97aaa342948021300817d14ae63667581cb988be3598e9e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":37,"width":327,"height":164},{"panel_id":"b","x":342,"y":42,"width":323,"height":159},{"panel_id":"c","x":686,"y":43,"width":315,"height":159}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_18_fig_9.jpg","caption":"FIG. 9. Relaxed geometry for 28HF, where $\\mathrm{H}_2\\mathrm{O}_2$ formed spontaneously. Color coding is the same as in Fig. 5.","id":"test/atomic-layer-etching/simulation-usecase/18/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/18/fig_9","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/Origin of enhanced thermal atomic layer etching of amorphous HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":669,"height":267,"image_format":"jpeg","image_sha256":"0d189992b1fa3b4d6f7d000f89e3058af4003fe3fa0c45f74b13951ce99bb61d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":8,"width":349,"height":256},{"panel_id":"b","x":409,"y":9,"width":256,"height":232}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_10.jpg","caption":"Figure 10. Relaxed geometries for HF coverages 2C, 4A, and 4B of $\\mathrm{ZrO_2}$ where complete dissociation of HF occurred spontaneously. Color coding is the same as in Figure 8.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_10","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_10","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1011,"height":200,"image_format":"jpeg","image_sha256":"2d612737f3f24fc0b5e78b921c403406a34870d8830583074d19898c9b5d6865","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":339,"height":196},{"panel_id":"b","x":351,"y":5,"width":313,"height":189},{"panel_id":"c","x":684,"y":7,"width":323,"height":190}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Atomistic model showing the relaxed 2HF C adsorption geometry on the ZrO₂ surface, where HF is fully dissociated and incorporated into the surface structure.\"},{\"panel_id\":\"b\",\"text\":\"Relaxed atomic structure of the 4HF A configuration on ZrO₂, representing one stable dissociated HF arrangement at higher surface coverage.\"},{\"panel_id\":\"c\",\"text\":\"Alternative relaxed atomic structure for the same 4HF coverage on ZrO₂, illustrating a distinct but stable dissociation geometry compared to 4HF A.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ZrO₂\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both panels (b) and (c) represent the same higher HF coverage, labeled as 4HF. Despite having identical coverage, they illustrate two distinct but stable dissociation geometries, denoted as 4HF A and 4HF B. This indicates that multiple relaxed structural configurations are possible for the same concentration of adsorbed species on the ZrO₂ surface.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"4HF A\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_13.jpg","caption":"Figure 13. Relaxed fluorination geometries for $\\mathrm{HfO_2}$ that resulted in $\\mathrm{H}_2\\mathrm{O}$ forming spontaneously. Color coding is the same as in Figure 8.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_13","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_13","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_13.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1014,"height":273,"image_format":"jpeg","image_sha256":"f9b48e9b555cff7a50bc7b5cdddc307b2e2d2f6bda2acbe76094cfa3f4fd791f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":5,"width":475,"height":263},{"panel_id":"b","x":485,"y":14,"width":522,"height":256}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Relaxed fluorination geometry on HfO₂ (8C HF condition) showing spontaneous formation of one H₂O molecule at the surface. The annotated H–O–H angle is 104.2°.\"},{\"panel_id\":\"b\",\"text\":\"Relaxed fluorination geometry on HfO₂ (32 HF condition) showing spontaneous formation of two H₂O molecules. The annotated H–O–H angles are 104.1°.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A water (H₂O) molecule.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is very close to the gas-phase value of approximately 104.5°.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The label \\\"32 HF\\\" indicates a specific initial configuration where a higher concentration of HF species (likely 32 molecules or units within the simulation cell) was introduced to the HfO₂ system prior to the geometric relaxation. This defines the starting chemical environment that led to the observed result.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Spontaneous.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_14.jpg","caption":"Figure 14. Relaxed fluorination geometries for $\\mathrm{ZrO_2}$ that resulted in $\\mathrm{H}_2\\mathrm{O}$ forming spontaneously. Color coding is the same as in Figure 8.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_14","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_14","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_14.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1011,"height":277,"image_format":"jpeg","image_sha256":"30f005fbdb5106d011c03266276c5649802fae639812504734a22f578e7d743d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":507,"height":270},{"panel_id":"b","x":532,"y":5,"width":475,"height":268}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Relaxed fluorination geometry on ZrO₂ (12B HF configuration) showing spontaneous formation of one H₂O molecule. The annotated H–O–H bond angle is 110.2°.\"},{\"panel_id\":\"b\",\"text\":\"Relaxed fluorination geometry on ZrO₂ (16A HF configuration) showing spontaneous formation of two H₂O molecules. The annotated H–O–H bond angles are 109.4° and 110.8°.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"110.2°\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Spontaneous H₂O formation indicates that surface reactions can proceed without external activation energy once suitable local configurations are reached. This behavior is highly relevant for understanding how fluorination alters surface chemistry, as it suggests a thermodynamically favorable pathway for the removal of oxygen as water, which is a key step in many etching or surface modification mechanisms.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It increases from one H₂O molecule to two.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the angles are not identical. One is 110.8° and the other is 109.4°. This slight difference suggests that the local chemical environment and steric interactions on the ZrO₂ surface differ for each formed water molecule, leading to small variations in their relaxed geometries.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_8.jpg","caption":"Figure 8. Relaxed adsorption structures for one HF molecule interacting with the bare surfaces of $\\mathrm{HfO_2}$ and $\\mathrm{ZrO_2}$ . The color coding is yellow $= \\mathrm{Hf}$ , green $= \\mathrm{Zr}$ , red $= \\mathrm{O}$ , white $= \\mathrm{H}$ , and blue $= \\mathrm{F}$ .","id":"test/atomic-layer-etching/simulation-usecase/25/figure_8","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_8","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1011,"height":428,"image_format":"jpeg","image_sha256":"4fd3dc93313151359d641990a40d0d2700f9128fe477d6cd9adc3a10e0528eaa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":5,"width":999,"height":219},{"panel_id":"b","x":0,"y":232,"width":1007,"height":190}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Three relaxed adsorption geometries (1HF A, 1HF B, 1HF C) for one HF molecule on HfO2. The labeled Hf–F bond lengths span 1.94–1.98 Å, while O–H spans 0.97–0.99 Å, consistent with HF dissociation and surface hydroxyl formation.\"},{\"panel_id\":\"b\",\"text\":\"Three relaxed adsorption geometries (1HF A, 1HF B, 1HF C) for one HF molecule on ZrO2. The labeled Zr–F bond lengths span 1.95–2.01 Å, and O–H again spans 0.97–0.99 Å across configurations, indicating similar dissociative adsorption behavior with slightly longer metal–F distances on ZrO2.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The narrow spread suggests that the hydroxyl group experiences a similar chemical environment across the different adsorption sites, at least at the level captured by this bond metric. Even if the metal–F bond length changes slightly with local coordination (e.g., from A to B to C), the protonated oxygen appears to form a comparable O–H bond. This consistency is indicative of hydroxyl formation being a relatively robust and uniform outcome of HF dissociation on these oxide surfaces.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, both are 1.98 Å.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, both panels show an O–H bond length range of 0.97–0.99 Å.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The relaxed state.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_9.jpg","caption":"Figure 9. Relaxed geometries for HF coverages 2A, 3C, 4C, 5A, and 5C of $\\mathrm{HfO}_2$ where complete dissociation of HF occurred spontaneously. Color coding is the same as in Figure 8.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_9","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_9","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1020,"height":450,"image_format":"jpeg","image_sha256":"8f2f36bf7b7c2f70aeeab9860e1fee732c24356cd042dc1874e9ac669bd18f5c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":13,"y":5,"width":326,"height":216},{"panel_id":"b","x":352,"y":5,"width":323,"height":216},{"panel_id":"c","x":688,"y":5,"width":332,"height":216},{"panel_id":"d","x":149,"y":231,"width":325,"height":219},{"panel_id":"e","x":549,"y":235,"width":328,"height":215}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Relaxed geometry for 2HF A on HfO2, under conditions where HF dissociates spontaneously (per caption). The panel represents a low-coverage case, useful as a reference for how dissociation products sit on the surface before crowding effects appear. Compared with higher-coverages in (c–e), the surface looks less congested around adsorption sites.\"},{\"panel_id\":\"b\",\"text\":\"Relaxed geometry for 3HF C on HfO2 with complete dissociation. Relative to 2HF A, the surface shows more dissociation fragments distributed across nearby sites, suggesting more site competition at moderate coverage. This panel serves as the transition point between sparse (a) and more crowded geometries (c–e).\"},{\"panel_id\":\"c\",\"text\":\"Relaxed geometry for 4HF C on HfO2 with complete dissociation. The higher density of adsorbates makes the local environment more constrained, which is typically where steric/electrostatic interactions begin to matter for adsorption motifs. It visually bridges the moderate coverage (b) and the highest coverage set (d–e).\"},{\"panel_id\":\"d\",\"text\":\"Relaxed geometry for 5HF A on HfO2 showing the highest HF coverage in this figure (5HF) with full dissociation. The surface appears densely populated with dissociation products, implying fewer “free” sites remain compared with (a–c). This is one of two distinct relaxed arrangements at the same coverage, showing configurational variability at fixed HF loading.\"},{\"panel_id\":\"e\",\"text\":\"Relaxed geometry for 5HF C on HfO2 at 5HF coverage with complete dissociation. It represents an alternative relaxed arrangement to (d) at the same coverage, indicating that multiple metastable/low-energy configurations can exist for identical HF counts. Comparing (d) vs (e) is mainly about adsorption-site distribution rather than changing chemistry, since both are fully dissociated cases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HfO₂.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Spontaneity in this context suggests that the transition from the molecularly adsorbed HF state to the dissociated state (forming Hf–F and surface –OH groups) is a downhill or barrierless process under the simulation conditions. This indicates that the dissociated state is thermodynamically more stable than the molecular state for these specific surface facets and coverage configurations. It allows the system to reach a local energy minimum during geometry optimization without requiring additional activation energy to overcome a transition state.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Hf–F bonds (fluorine atoms binding to surface metal centers)\\n-O–H bonds (protons binding to lattice oxygen atoms to form surface hydroxyls)\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig_1.jpg","caption":"FIG. 1. (a) Reoptimized trigonal lattice geometry for $\\mathsf{B}_2\\mathsf{O}_3$ bulk. (b) Bare (1 0 1) surface of trigonal $\\mathsf{B}_2\\mathsf{O}_3$ . (c) Fluorinated $\\mathsf{B}_2\\mathsf{O}_3$ surface from (b) after removing six surface O atoms.","id":"test/atomic-layer-etching/simulation-usecase/28/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/28/fig_1","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1414,"height":575,"image_format":"jpeg","image_sha256":"a0c4f388e491219fe5cc552c83772da2c19cac0f291d231e6488431f8c671a1d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":11,"y":69,"width":284,"height":502},{"panel_id":"b","x":364,"y":67,"width":479,"height":504},{"panel_id":"c","x":912,"y":26,"width":491,"height":541}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the reoptimized trigonal bulk B₂O₃ structure with the periodic unit cell highlighted, illustrating the three-dimensional boron–oxygen network.\"},{\"panel_id\":\"b\",\"text\":\"The figure presents the bare (101) surface of trigonal B₂O₃ after surface cleavage, exposing undercoordinated surface atoms and the open ring structure characteristic of this orientation.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the same surface after fluorination, where fluorine atoms bind to surface boron sites following removal of surface oxygen atoms, representing a chemically modified B₂O₃ surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Creating the (101) surface breaks periodicity and exposes undercoordinated boron and oxygen atoms at the surface. This results in an open surface network compared to the fully connected bulk structure. The reduced coordination at the surface provides sites that are more chemically accessible than those in the bulk lattice.\\nCreating the (101) surface breaks periodicity and exposes undercoordinated boron and oxygen atoms at the surface. This results in an open surface network compared to the fully connected bulk structure. The reduced coordination at the surface provides sites that are more chemically accessible than those in the bulk lattice.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Fluorine atoms bind to surface boron sites, replacing some surface oxygen coordination.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Fluorine forms strong B–F bonds, which changes the local coordination and electronic environment of surface boron atoms. This can reduce surface reactivity toward oxygen while enabling alternative reaction pathways relevant for etching or surface modification.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_3.jpg","caption":"Fig. 3. $\\theta\\text{-Al}_2\\mathrm{O}_3$ (20 1) crystal structure.","id":"test/atomic-layer-etching/simulation-usecase/34/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_3","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":530,"height":405,"image_format":"jpeg","image_sha256":"322c4fb92f488c2d4fbf2e441020842b1209d367ff94afc35560777b0e68f938","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":530,"height":405}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_1.jpg","caption":"Figure 1. Cluster models used to represent the active functional groups on the $\\mathrm{SiO_2}$ substrate: (a) $\\mathrm{(SiH_3O)_3Si - OH}$ cluster used to represent isolated surface $-\\mathrm{OH}$ groups, (b) $\\mathrm{Si_6O_7H_{14}}$ cluster used to represent adjacent hydrogen-bonded $-\\mathrm{OH}$ groups, and (c) the $\\mathrm{Si_2O_6H_4}$ cluster used to represent oxygen bridges on the $\\mathrm{SiO_2}$ substrate.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_1","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Isolated –OH groups on hydroxylated SiO₂ clusters, representing individual hydroxyl sites in ALD simulations. Small cluster models were used to capture the local reaction environment.\"},{\"panel_id\":\"b\",\"text\":\"Adjacent hydrogen-bonded –OH groups, highlighting interactions between neighboring hydroxyls on hydroxylated SiO₂ clusters. Small cluster models were used for simulations.\"},{\"panel_id\":\"c\",\"text\":\"Oxygen bridges (Si–O–Si) on SiO₂ clusters, representing bridge sites on the surface. Small clusters were used for simulations, with a larger cluster (Si₁₂O₁₄H₂₄) validating cluster size effects.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Surface Functional Group | Cluster Model | Notes |\\n|--------------------------|---------------|-------|\\n| Isolated –OH groups | Small cluster | Representative of single hydroxyl sites on SiO₂ |\"},{\"panel_id\":\"b\",\"text\":\"| Surface Functional Group | Cluster Model | Notes |\\n|--------------------------|---------------|-------|\\n| Adjacent hydrogen-bonded –OH groups | Small cluster | Representative of –OH groups with hydrogen bonding |\"},{\"panel_id\":\"c\",\"text\":\"| Surface Functional Group | Cluster Model | Notes |\\n|--------------------------|---------------|-------|\\n| Oxygen bridges | Small cluster | Represents Si–O–Si bridge sites on the surface |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Adjacent hydrogen-bonded –OH groups.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Knowing the distinct types of surface sites allows researchers to model reaction kinetics more accurately, as different sites may have varying adsorption rates and mechanisms. This ensures that simulations can predict coverage, reaction pathways, and surface saturation more realistically. By using small cluster models for each surface type, the study achieves computational efficiency while capturing the essential chemical behavior, and validation with larger clusters ensures the reliability of the results. This knowledge can guide experimental design and process optimization for uniform and controlled TiO₂ film growth.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Panel (a): Isolated –OH groups; individual hydroxyl sites, Panel (b): Adjacent hydrogen-bonded –OH groups; neighboring hydroxyls interacting via hydrogen bonding, Panel (c): Oxygen bridges; Si–O–Si bridge sites connecting two silicon atoms\"}]}]","bbox":[{"panel_id":"a","x":8,"y":6,"width":324,"height":241},{"panel_id":"b","x":344,"y":22,"width":321,"height":214},{"panel_id":"c","x":169,"y":306,"width":330,"height":150}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":667,"height":500,"image_format":"jpeg","image_sha256":"25d617a4dbb4874dbd1c4eef7a478d04136fe18dc33c73d58fd554851a63e509","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_10.jpg","caption":"Figure 10. Stationary points for reaction E calculated using B3LYP/6- $3\\mathrm{TiO}(\\mathrm{d},\\mathrm{p})$ a) adsorption equilibrium state b) transition state. Only the reactive site of the $\\mathrm{SiO_2}$ substrate is shown for clarity in the figure.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_10","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Adsorption equilibrium state for reaction E on the SiO₂ substrate, showing H₂O interacting with the −TiI₂ species via a Lewis acid/base interaction. Only the reactive site of the substrate is displayed.\"},{\"panel_id\":\"b\",\"text\":\"Transition state for reaction E on the SiO₂ substrate, showing partial breaking of the Ti−I bond and partial formation of the H−I bond. Only the reactive site of the substrate is displayed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Element|Color|\\n|-------|-----|\\n|Ti|Gray|\\n|O|Red|\\n|H|White|\"},{\"panel_id\":\"b\",\"text\":\"|Element|Color|\\n|-------|-----|\\n|Ti|Gray|\\n|O|Red|\\n|H|White|\\n|I|Purple|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Ti−O bond distance shortens as the system progresses from the adsorption equilibrium state to the transition state.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The transition state represents a high-energy configuration where the Ti−I bond is partially broken while the H−I bond is partially formed. This rearrangement allows the H2O molecule to transfer a hydrogen to the surface, forming an OH group and liberating HI. This step is critical in the hydroxylation of the surface, enabling further reactions and restoring reactive −OH sites for subsequent ALD cycles.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Lewis acid/base interaction between Ti and O, Formation of the adsorbed complex, Initial positioning of H₂O for subsequent bond formation and breaking\"}]}]","bbox":[{"panel_id":"a","x":5,"y":22,"width":297,"height":338},{"panel_id":"b","x":341,"y":8,"width":322,"height":354}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":667,"height":366,"image_format":"jpeg","image_sha256":"806b371eed3046a3d2090d7b901f770a648bc11fb6c2d6e161942b49276931b8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_12.jpg","caption":"Figure 12. Stationary points for reaction $\\mathrm{F}$ calculated using B3LYP/6-31G(d,p): (a) adsorption equilibrium state, (b) transition state. Distances are shown in angstroms.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_12","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Adsorption equilibrium state for reaction F on the SiO₂ surface, showing TiI₄ coordinating to the oxygen bridge via a Lewis acid/base interaction with a Ti−O distance of 1.75 Å.\"},{\"panel_id\":\"b\",\"text\":\"Transition state for reaction F on the SiO₂ surface, showing a shortened Ti−O bond (1.90 Å), partial breaking of the Ti−I1 bond (3.03 Å), partial formation of the Si−I1 bond (2.69 Å), and partial breaking of the Si−O bond (2.07 Å). Delocalization interactions between I lone pairs and Ti antibonding orbitals are also present, with an activation barrier of 15.7 kcal/mol and a reaction enthalpy of −23.3 kcal/mol.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Atoms|Bond Lengths (Å)|\\n|-----|----------------|\\n|Ti-O|1.75|\\n|Ti-Si|2.64|\\n|Si-O|2.22|\\n|O-Si|2.69|\\n|Si-O-H|2.22|\\n|Si-O-H|3.03|\"},{\"panel_id\":\"b\",\"text\":\"|Atoms|Bond Lengths (Å)|\\n|-----|----------------|\\n|Ti-O|1.90|\\n|Ti-I1|3.03|\\n|Ti-I2/I3|2.91 (approx.)|\\n|Ti-I4|2.95 (approx.)|\\n|Si-O|2.07|\\n|Si-I1|2.69|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The reaction involves a transition state where key bonds are partially broken or formed.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Ti−O bond decreases from 2.22 Å in the adsorption state to 1.90 Å in the transition state.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the transition state, delocalization occurs from the lone pair of I1 to the unfilled σTi-I4* antibonding orbital, stabilizing the system. This electronic redistribution partially weakens the Ti−I1 bond while slightly lengthening Ti−I4. These interactions, combined with partial bond formation between Si and I1 and partial bond breaking of Si−O, result in a ZPE-including activation barrier of 15.7 kcal/mol. The strong bonding and electronic stabilization in the final product make it significantly more stable than the adsorption state, with a reaction enthalpy of −23.3 kcal/mol.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ti−O: shortened to 1.90 Å, Ti−I1: partially broken, 3.03 Å, Ti−I4: slightly lengthened, Si−O: partially broken, 2.07 Å, Si−I1: partially formed, 2.69 Å\"}]}]","bbox":[{"panel_id":"a","x":4,"y":3,"width":326,"height":363},{"panel_id":"b","x":351,"y":4,"width":322,"height":361}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":675,"height":414,"image_format":"jpeg","image_sha256":"e4116ae109af54e2a21c721fec2859c8acc2e867e65e43284e91ed59e5d7876a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_14.jpg","caption":"Figure 14. ZPE-corrected PES for the iodine release reaction: (a) reactant, (b) transition state, and (c) product-like adsorption equilibrium state. Distances are shown in angstroms.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_14","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_14","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Reactant state for the iodine release reaction, showing two adjacent −TiI₃ species on the surface.\"},{\"panel_id\":\"b\",\"text\":\"Transition state, where Ti1−Ti2 bonding begins, the Ti1−I2 bond is broken, and the Ti2−I4 bond is partially broken. The Ti coordination geometry changes from tetrahedral to trigonal bipyramidal.\"},{\"panel_id\":\"c\",\"text\":\"Product-like adsorption equilibrium, showing formation of an I₂ molecule (I2−I4) and lengthened Ti−I bonds due to Ti rehybridization. The reaction is strongly endothermic (57.8 kcal/mol) with a high activation barrier (61.9 kcal/mol).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Atom Pair|Bond Length (Å)|\\n|---------|---------------|\\n|Ti1−Ti2|3.28|\\n|Ti1−I2|3.14|\\n|Ti2−I4|2.80|\"},{\"panel_id\":\"b\",\"text\":\"|Atom Pair|Bond Length (Å)|\\n|---------|---------------|\\n|Ti1−Ti2|3.28|\\n|Ti1−I2|3.14|\\n|Ti2−I4|2.80|\"},{\"panel_id\":\"c\",\"text\":\"|Atom Pair|Bond Length (Å)|\\n|---------|---------------|\\n|Ti−I bonds|All longer than in reactant|\\n|I2−I4|Formed as I2 molecule|\"},{\"panel_id\":\"d\",\"text\":\"|Reaction Coordinate|Relative Energy (kcal/mol)|\\n|-------------------|--------------------------|\\n|Reactant|0.0|\\n|Transition State|61.9|\\n|Product|57.8|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. During the transition state, the coordination geometry of Ti changes from tetrahedral to trigonal bipyramidal.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"All Ti−I bond lengths increase in the product state compared to the reactant due to Ti rehybridization and decreased electron density between Ti and I atoms.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reaction is strongly endothermic by 57.8 kcal/mol, and the activation barrier is very high at 61.9 kcal/mol. This indicates that a significant input of energy is required for the reaction to occur, making it kinetically slow under typical conditions. In the context of atomic layer deposition (ALD), this suggests that the reaction would likely require elevated temperatures or other activation strategies to proceed efficiently, and the rate-limiting step could impact the overall process throughput.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Formation of a Ti1−Ti2 bonding interaction (Ti−Ti distance = 3.28 Å), Breakage of the Ti1−I2 bond (distance = 3.14 Å), Partial breakage of the Ti2−I4 bond (distance = 2.80 Å), Change in Ti coordination geometry from tetrahedral to trigonal bipyramidal\"}]}]","bbox":[{"panel_id":"a","x":426,"y":779,"width":445,"height":351},{"panel_id":"b","x":280,"y":7,"width":441,"height":370},{"panel_id":"c","x":903,"y":662,"width":374,"height":547},{"panel_id":"d","x":6,"y":398,"width":1273,"height":953}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_14.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1280,"height":1353,"image_format":"jpeg","image_sha256":"b5487f589d38078428b16ca27011a3aee0ae0213bf14428b3dce4a6335a47054","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_15.jpg","caption":"Figure 15. HOMO orbitals of stationary points for the iodine release reaction: (a) transition state, (b) product-like adsorption equilibrium state.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_15","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_15","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"HOMO orbitals at the transition state for the iodine release reaction, showing Ti1−Ti2 bonding interaction via sd orbital overlap, partial cleavage of Ti−I bonds, and a change in Ti coordination geometry from tetrahedral to trigonal bipyramidal.\"},{\"panel_id\":\"b\",\"text\":\"HOMO orbitals at the product-like adsorption equilibrium, showing formation of the I₂ molecule, lengthened Ti−I bonds, and stabilization through enhanced overlap between I p orbitals and Ti sd orbitals.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Orbital Feature|Description|\\n|---------------|-----------|\\n|Transition State|Ti1−Ti2 bonding interaction observed due to sd orbital overlap; Ti1−I2 bond 3.14 Å; Ti2−I4 bond 2.80 Å; Ti coordination geometry changes from tetrahedral to trigonal bipyramidal.|\"},{\"panel_id\":\"b\",\"text\":\"|Orbital Feature|Description|\\n|---------------|-----------|\\n|Product-like Adsorption Equilibrium|I2 and I4 form I2 molecule; all Ti−I bonds longer than in reactant due to Ti rehybridization; structure stabilized by increased overlap between I p orbitals and Ti sd orbitals.|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The HOMO orbital analysis shows that the Ti1−Ti2 bonding interaction is formed due to the overlap of their sd orbitals in the transition state.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Ti−I bonds become longer in the product-like state compared to the transition state, reflecting rehybridization of Ti and stabilization of the iodine molecule.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The HOMO orbital distribution shows where electron density is concentrated during the transition state and product formation. In the transition state, the Ti−Ti bonding interaction and partial Ti−I bond cleavage indicate electron redistribution necessary to form I2. In the product, the extended Ti−I bond lengths and stabilized overlap with I p orbitals explain why the reaction is endothermic (57.8 kcal/mol) and has a high activation barrier (61.9 kcal/mol). This orbital insight helps rationalize the slow kinetics and strong energy requirements observed experimentally, supporting the mechanistic understanding of iodine release during ALD.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ti coordination geometry changes from tetrahedral to trigonal bipyramidal in the transition state, Ti−Ti bonding forms in the transition state, Partial cleavage of Ti−I bonds in the transition state, I₂ molecule formation in the product state, Ti−I bonds lengthen in the product state, Enhanced overlap between I p orbitals and Ti sd orbitals in the product\"}]}]","bbox":[{"panel_id":"a","x":7,"y":40,"width":619,"height":602},{"panel_id":"b","x":4,"y":648,"width":618,"height":707}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_15.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":628,"height":1361,"image_format":"jpeg","image_sha256":"1127bca5fb6fb496d0047b03d6bd7f2667506c3621c8a4d306c172390232380f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_2.jpg","caption":"Figure 2. $(\\mathrm{SiH}_3\\mathrm{O})_3\\mathrm{Si} - \\mathrm{OH}^*$ cluster model used in ONIOM calculations. The atoms appearing as spheres are treated with a high-level model chemistry, whereas the remaining atoms are approximated with HF/6-31G(d,p).","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 2 illustrates the (SiH₃O)₃Si–OH* cluster model used in ONIOM calculations. The cluster is partitioned into two regions: the substrate atoms and the TiCl₄ precursor, which are treated with high-level model chemistries (B3LYP/6-311++G(2df,2p), MP2/6-311++G(2df,2p), or CCSD(T)/6-311++G(2df,2p)) due to their critical role in reaction energetics, and the remaining atoms, which are approximated using the less-expensive HF/6-31G(d,p) method. The figure highlights the spheres representing the high-level region, indicating the focus area for energy calculations in the ONIOM method. This model was employed to validate theoretical approaches for predicting reaction energies.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Region|Treatment|Notes|\\n|------|---------|-----|\\n|Substrate atoms and TiCl4 precursor|High-level model chemistry (B3LYP/6-311++G(2df,2p), MP2/6-311++G(2df,2p), or CCSD(T)/6-311++G(2df,2p))|Crucial for reaction energetics; spheres in the figure|\\n|Remaining atoms|Low-level HF/6-31G(d,p)|Approximated for computational efficiency|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"B3LYP/6-311++G(2df,2p), MP2/6-311++G(2df,2p), and CCSD(T)/6-311++G(2df,2p).\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ONIOM model allows selective application of computationally expensive high-level methods to the atoms that are most critical for reaction energetics, such as the substrate and TiCl₄ precursor. By approximating the remaining atoms at a lower level, the method reduces computational cost without sacrificing accuracy in the key reaction region. This approach ensures reliable predictions of adsorption and reaction energies, guiding the understanding of reaction mechanisms and informing subsequent computational or experimental studies in ALD TiO₂ deposition.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Substrate atoms and TiCl₄ precursor treated at high-level model chemistry, Remaining atoms treated with low-level HF/6-31G(d,p), Spheres indicate the high-level region, Used to evaluate reaction energetics in the ALD process, Provides computational efficiency while maintaining accuracy\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":197,"height":150}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":197,"height":150,"image_format":"jpeg","image_sha256":"dd73f7986191f8f564f699b91962ffe254b932452f3779c36099b6a5bb442d6c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_4.jpg","caption":"Figure 4. Stationary points for the $(\\mathrm{SiH}_3\\mathrm{O})_3\\mathrm{Si} - \\mathrm{OH}^* + \\mathrm{TiI}_4$ reaction calculated using B3LYP/6-31G(d,p): (a) adsorption equilibrium state, (b) transition state. Distances are shown in angstroms.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_4","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Adsorption equilibrium state for the (SiH₃O)₃Si–OH* + TiI₄ reaction, showing Ti coordinated to O with a bond length of 2.27 Å and Ti–I distance of 2.66 Å.\"},{\"panel_id\":\"b\",\"text\":\"Transition state for the reaction, showing Ti–O distance decreased to 1.90 Å, Ti–I bond largely broken at 3.58 Å, partial formation of H–I bond at 1.95 Å, and full breaking of the O–H bond, capturing the evolution of bonding along the reaction pathway.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Bond|Distance (Å)|\\n|----|------------|\\n|Ti-O|2.27|\\n|Ti-I|2.66|\\n|H-I|—|\\n|O-H|—|\"},{\"panel_id\":\"b\",\"text\":\"|Bond|Distance (Å)|\\n|----|------------|\\n|Ti-O|1.90|\\n|Ti-I|3.58|\\n|H-I|1.95|\\n|O-H|broken|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Ti–O bond shortens from 2.27 Å in the adsorption state to 1.90 Å in the transition state, indicating stronger coordination as the reaction progresses.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The bond distance changes in the transition state reflect the key interactions driving the reaction, such as Ti coordination to O, partial H–I formation, and O–H bond cleavage. These structural insights allow accurate computation of the ZPE-corrected activation barrier (13.5 kcal/mol) and reaction exothermicity (9.4 kcal/mol). They also inform NBO analysis and mechanistic modeling, including the identification of electron delocalization effects that stabilize the transition state and affect the rate constants for the surface reaction. This detailed structural information is critical for predicting reaction kinetics and optimizing ALD processes.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ti–O: 2.27 Å → 1.90 Å (shortens), Ti–I: 2.66 Å → 3.58 Å (elongates, nearly broken), H–I: not formed → 1.95 Å (partial bond formation), O–H: intact → broken\"}]}]","bbox":[{"panel_id":"a","x":5,"y":5,"width":327,"height":362},{"panel_id":"b","x":351,"y":10,"width":312,"height":351}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":664,"height":417,"image_format":"jpeg","image_sha256":"5c0cf459be97eb227f70563064e15518ac6c2fa9b954ad74433f6c9c5c0adcb6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_6.jpg","caption":"Figure 6. Stationary points for the $(\\mathrm{SiH}_3\\mathrm{O})_3\\mathrm{Si - O - TiI}_3^* + \\mathrm{H}_2\\mathrm{O}$ reaction calculated using B3LYP/6-31G(d,p): (a) adsorption equilibrium state, and (b) transition state. Distances are shown in angstroms.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_6","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Adsorption equilibrium state for the (SiH₃O)₃Si–O–TiI₃* + H₂O reaction, showing H₂O binding to the apical site of the −TiI₃ group, stabilized by lone pair donation from oxygen to titanium, with a 0 K adsorption heat of 6.2 kcal/mol.\"},{\"panel_id\":\"b\",\"text\":\"Transition state for the reaction, showing Ti–O bond at 1.95 Å, Ti–I bond broken (3.88 Å), partial formation of the H–I bond, an activation barrier of 20.3 kcal/mol, and slight exothermicity of 0.2 kcal/mol.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Atom Pair|Bond Length (Å)|Notes|\\n|---------|---------------|-----|\\n|Ti - O1|1.95|Adsorption of H2O at apical site of -TiI3 group|\\n|Ti - I|3.88|Bond length increased in adsorption state|\\n|O lone pair → Ti-O*|67.44 kcal/mol|Stabilization energy from NBO donation|\\n|H2O charge|+0.1 e|Charge transfer from O to Ti|\\n|ΔH_adsorption|6.2 kcal/mol|Heat of adsorption at 0 K|\"},{\"panel_id\":\"b\",\"text\":\"|Atom Pair|Bond Length (Å)|Notes|\\n|---------|---------------|-----|\\n|Ti - O (H2O)|1.95|Bonding in transition state|\\n|Ti - I|3.88|Bond broken in transition state|\\n|O lone pair → H-I*|Partial delocalization|Indicates partial O-H bond breakage and H-I formation|\\n|ΔH_reaction|0.2 kcal/mol|Slightly exothermic at 0 K|\\n|Activation Barrier|20.3 kcal/mol|From adsorption to transition state|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It decreases from the adsorption equilibrium state to 1.95 Å in the transition state.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding the adsorption and transition state energetics helps predict the activation barriers and exothermicity of surface reactions. For ALD process design, this information guides the choice of temperature and exposure times to ensure efficient surface hydroxyl regeneration, minimize undesired side reactions, and optimize precursor dosing. It also allows estimation of rate constants for kinetic modeling of the full deposition cycle.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"H₂O binds to the apical site of -TiI₃, Lone pair donation from oxygen to Ti stabilizes the adsorption complex (67.44 kcal/mol), Charge transfer from H₂O to Ti (+0.1 e), Coordination geometry changes from tetrahedral to trigonal bipyramidal, Ti–I bond elongates to 3.88 Å in the transition state, Partial formation of H–I bond, O–H bond partially breaks in the transition state\"}]}]","bbox":[{"panel_id":"a","x":6,"y":4,"width":320,"height":367},{"panel_id":"b","x":335,"y":12,"width":329,"height":367}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":667,"height":408,"image_format":"jpeg","image_sha256":"ff8dbab2f2f6375478aedc83581380c6dad76c500ac8efdacc4e7eec548a0fc5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_9.jpg","caption":"Figure 9. Stationary points for the first half-reactions taking place on the adjacent hydrogen-bonded hydroxyl groups calculated using B3LYP/6-31G- $(\\mathrm{d},\\mathrm{p})$ a adsorption equilibrium state on the top site of a single hydroxyl group, (b) adsorption equilibrium state on the bridge site of adjacent hydroxyl groups, (c) transition state for reaction C, and (d) transition state for reaction D. For clarity, only reactive site of the $\\mathrm{SiO_2}$ substrate is shown. Distances are shown in angstroms.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_9","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Adsorption equilibrium state of TiI₄ on the top site of an adjacent hydroxyl group, showing Ti interacting with O and H atoms of the surface, including Si from the substrate, and a weak hydrogen bond between hydroxyls.\"},{\"panel_id\":\"b\",\"text\":\"Bridge-site adsorption state of TiI₄ on adjacent hydroxyl groups, showing Ti in 6-fold coordination with surface oxygens, indicating an octahedral-like geometry.\"},{\"panel_id\":\"c\",\"text\":\"Transition state for reaction C, showing partial breaking of the Ti−I bond (3.85 Å), formation of the Ti−O bond (1.95 Å), and partial formation of the H−I bond.\"},{\"panel_id\":\"d\",\"text\":\"Transition state for reaction D, showing elongated Ti−I and H−O bonds and a shortened Ti−O bond, indicating progression toward HI formation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Element|Color|\\n|-------|-----|\\n|Ti|Gray|\\n|O|Red|\\n|Si|Cyan|\\n|H|White|\"},{\"panel_id\":\"b\",\"text\":\"|Element|Color|\\n|-------|-----|\\n|Ti|Gray|\\n|O|Red|\\n|Si|Cyan|\\n|H|White|\"},{\"panel_id\":\"c\",\"text\":\"|Element|Color|\\n|-------|-----|\\n|Ti|Gray|\\n|O|Red|\\n|H|White|\\n|I|Purple|\"},{\"panel_id\":\"d\",\"text\":\"|Element|Color|\\n|-------|-----|\\n|Ti|Gray|\\n|O|Red|\\n|H|White|\\n|I|Purple|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The activation barrier for reaction C is 12.7 kcal/mol, while for reaction D it is 14.7 kcal/mol. Reaction D has a slightly higher barrier.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The adsorption states show that TiI₄ prefers the bridge site of adjacent hydroxyls, providing a more stable complex and enabling efficient electron donation from surface oxygens to Ti. Understanding the transition states for reactions C and D helps predict the energy barriers for HI release, allowing optimization of ALD conditions such as temperature and precursor exposure to ensure complete reactions and controlled surface coverage. This mechanistic insight is critical for tuning film growth rates and surface functionality.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Reaction C (TS): Ti−I bond breaks to 3.85 Å; Ti−O bond shortens to 1.95 Å; H−I distance decreases to 1.94 Å, Reaction D (TS): Ti−I and H−O bonds lengthen; Ti−O bond shortens, reflecting HI formation\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":339,"height":328},{"panel_id":"b","x":364,"y":8,"width":281,"height":324},{"panel_id":"c","x":13,"y":395,"width":298,"height":318},{"panel_id":"d","x":338,"y":400,"width":322,"height":340}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":661,"height":786,"image_format":"jpeg","image_sha256":"7736d76d988a8a4325a5936a8c58af6657bc4b92bf54e5cfc7ea829bf5b58547","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_16_figure_1.jpg","caption":"Figure 1. Cluster models to mimic the active sites on the $\\mathrm{HfO_2}$ surface during $\\mathrm{HfO_2}$ ALD. (a) $\\mathrm{Hf(OH)_3 - OH}$ b $\\mathrm{Hf(OH)_3 - OEt}$ and (c) $\\mathrm{Hf(OH)_3 - Cl}$","id":"test/atomic-layer-deposition/simulation-usecase/16/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/16/figure_1","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":8,"y":61,"width":186,"height":247},{"panel_id":"b","x":230,"y":9,"width":210,"height":298},{"panel_id":"c","x":462,"y":93,"width":202,"height":216}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/Collin Mui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":666,"height":308,"image_format":"jpeg","image_sha256":"03309737da5c7fe27356589df7190f1f8711898cf8e72cd0778c45f243cc455b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_2.jpg","caption":"Fig. 2. Reduced cluster models of surface Ga and surface N (top figures), and larger cluster model used for surface Ga to examine the validity of the reduced cluster model.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":2,"width":584,"height":244},{"panel_id":"b","x":6,"y":248,"width":584,"height":356}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":589,"height":606,"image_format":"jpeg","image_sha256":"ee00afa5fe960d5939c405c08f181755137fde9ef463f4d42aeb0178731ea11d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_3.jpg","caption":"Fig. 3. Molecular representation of the surface reactions that have been considered for GaN deposition. The structures are views along the (100) surface similar to that shown in Ref. [25] for GaAs.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_3","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":0,"width":1171,"height":1236}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1181,"height":1233,"image_format":"jpeg","image_sha256":"0ae17cd9025ee68704ac760181731c5f303b4ed2cd668ad066a1c9814e73fb05","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_21_fig_1.jpg","caption":"FIG. 1. (Color online) Optimized structures for the possible precursors for ALD of SiC performed in TURBOMOLE with PBE functional. (a) methane $\\mathrm{(CH_4)}$ b ethane $(\\mathrm{C}_2\\mathrm{H}_6)$ c propane $(\\mathrm{CH_8})$ d $n$ -butane $(\\mathrm{C_4H_{10}})$ e $n$ -hexane $(\\mathrm{C_6H_{14}})$ f ethylene $(\\mathrm{C}_2\\mathrm{H}_4)$ g propene $(\\mathrm{C}_3\\mathrm{H}_6)$ h-2-butene $(\\mathrm{C_4H_8})$ i ethyne $(\\mathrm{C}_2\\mathrm{H}_2)$ j propyne $(\\mathrm{C}_3\\mathrm{H}_4)$ k carbontetrachloride $(\\mathrm{CCl}_4)$ (l iodomethane $(\\mathrm{CH}_3\\mathrm{I})$ m trichloromethane $(\\mathrm{CHCl}_3)$ n chloromethane $(\\mathrm{CH}_3\\mathrm{Cl})$ o disilane $\\mathrm{(Si_2H_6)}$ p silane $\\mathrm{(SiH_4)}$ q monochlorosilane $\\mathrm{(SiH_3Cl)}$ rDCS, (s) TCS, (t hexachlorodisilane $\\mathrm{(Si_2Cl_6)}$ uTET, (v tetrafluorosilane $\\mathrm{(SiF_4)}$ w dichlorosilacyclobutane $\\mathrm{[SiCl_2(CH_2)_3]}$ x dimethyldichlorosilane $\\mathrm{[Si(CH_3)_2Cl_2]}$ y bis(trichlorosilyl)methane $\\mathrm{[SiCl_3)_2CH_2]}$ z methylsilane $(\\mathrm{CH}_3\\mathrm{-SiH}_3)$ aa1,3- disilabutane $\\mathrm{(SiH_3 - CH_2 - SiH_2 - CH_2)}$ (bb) silacyclobutane $\\mathrm{[SiH_2(CH_2)_3]}$ co) maethylorthosilicate $\\mathrm{Si(OEt)_4}$ ddDIPAS, (ee) bis(diethylamino)silane $\\mathrm{H}_2\\mathrm{Si}[\\mathrm{N}(\\mathrm{Et})_2]_2$ and (ff) MTS. (Et)-ethyl group $\\mathrm{^{\\circ}CH_{2} - ^{\\circ}CH_{3}}$ (iPr)-iso-propyl group $\\mathrm{-CH_2 - CH_2 - CH_3}$","id":"test/atomic-layer-deposition/simulation-usecase/21/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/21/fig_1","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"},{"panel_id":"h","label":"molecular structure diagram"},{"panel_id":"i","label":"molecular structure diagram"},{"panel_id":"j","label":"molecular structure diagram"},{"panel_id":"k","label":"molecular structure diagram"},{"panel_id":"l","label":"molecular structure diagram"},{"panel_id":"m","label":"molecular structure diagram"},{"panel_id":"n","label":"molecular structure diagram"},{"panel_id":"o","label":"molecular structure diagram"},{"panel_id":"p","label":"molecular structure diagram"},{"panel_id":"q","label":"molecular structure diagram"},{"panel_id":"r","label":"molecular structure diagram"},{"panel_id":"s","label":"molecular structure diagram"},{"panel_id":"t","label":"molecular structure diagram"},{"panel_id":"u","label":"molecular structure diagram"},{"panel_id":"v","label":"molecular structure diagram"},{"panel_id":"w","label":"molecular structure diagram"},{"panel_id":"x","label":"molecular structure diagram"},{"panel_id":"y","label":"molecular structure diagram"},{"panel_id":"z","label":"molecular structure diagram"},{"panel_id":"aa","label":"molecular structure diagram"},{"panel_id":"bb","label":"molecular structure diagram"},{"panel_id":"cc","label":"molecular structure diagram"},{"panel_id":"dd","label":"molecular structure diagram"},{"panel_id":"ee","label":"molecular structure diagram"},{"panel_id":"ff","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Optimized molecular structure of methane (CH₄) used as a reference hydrocarbon precursor for SiC ALD.\"},{\"panel_id\":\"b\",\"text\":\"Optimized molecular structure of ethane (C₂H₆), a simple hydrocarbon considered for ALD studies.\"},{\"panel_id\":\"c\",\"text\":\"Optimized molecular structure of propane (C₃H₈), illustrating hydrocarbon geometry relevant to precursor evaluation.\"},{\"panel_id\":\"d\",\"text\":\"Optimized molecular structure of butane (C₄H₁₀), included as a simple carbon precursor for SiC ALD.\"},{\"panel_id\":\"e\",\"text\":\"Optimized molecular structure of pentane (C₅H₁₂), demonstrating hydrocarbon precursor geometry.\"},{\"panel_id\":\"f\",\"text\":\"Optimized molecular structure of hexane (C₆H₁₄), representing extended-chain hydrocarbons for ALD modeling.\"},{\"panel_id\":\"g\",\"text\":\"Optimized molecular structure of ethylene (C₂H₄), an alkene hydrocarbon evaluated as a precursor.\"},{\"panel_id\":\"h\",\"text\":\"Optimized molecular structure of propylene (C₃H₆), showing double-bond geometry relevant for ALD.\"},{\"panel_id\":\"i\",\"text\":\"Optimized molecular structure of 1-butyne (C₄H₆), an alkyne hydrocarbon considered for precursor reactivity.\"},{\"panel_id\":\"j\",\"text\":\"Optimized molecular structure of 2-butyne (C₄H₆), illustrating triple-bond geometry for ALD modeling.\"},{\"panel_id\":\"k\",\"text\":\"Optimized molecular structure of chloromethane (CH₃Cl), a halogenated carbon precursor.\"},{\"panel_id\":\"l\",\"text\":\"Optimized molecular structure of dichloromethane (CH₂Cl₂), showing halogen substitution effects on ALD reactivity.\"},{\"panel_id\":\"m\",\"text\":\"Optimized molecular structure of trichloromethane (CHCl₃), included to assess halogenated precursor behavior.\"},{\"panel_id\":\"n\",\"text\":\"Optimized molecular structure of tetrachloromethane (CCl₄), a fully halogenated carbon precursor.\"},{\"panel_id\":\"o\",\"text\":\"Optimized molecular structure of silane (SiH₄), a silicon hydride precursor for ALD.\"},{\"panel_id\":\"p\",\"text\":\"Optimized molecular structure of disilane (Si₂H₆), showing extended silicon hydride geometry.\"},{\"panel_id\":\"q\",\"text\":\"Optimized molecular structure of trisilane (Si₃H₈), included as a higher-order silicon hydride precursor.\"},{\"panel_id\":\"r\",\"text\":\"Optimized molecular structure of chlorosilane (SiH₃Cl), illustrating halogenated silicon species for ALD.\"},{\"panel_id\":\"s\",\"text\":\"Optimized molecular structure of dichlorosilane (SiH₂Cl₂), showing substitution effects on reactivity.\"},{\"panel_id\":\"t\",\"text\":\"Optimized molecular structure of trichlorosilane (SiHCl₃), a silicon precursor with increased halogenation.\"},{\"panel_id\":\"u\",\"text\":\"Optimized molecular structure of tetrachlorosilane, a silicon precursor with increased halogenation.\"},{\"panel_id\":\"v\",\"text\":\"Optimized molecular structure of fluorosilane (SiH₃F), representing fluorine-substituted silicon precursors.\"},{\"panel_id\":\"w\",\"text\":\"Optimized molecular structure of difluorosilane (SiH₂F₂), illustrating fluorinated silicon species for ALD.\"},{\"panel_id\":\"x\",\"text\":\"Optimized molecular structure of trifluorosilane (SiHF₃), showing higher fluorination on silicon.\"},{\"panel_id\":\"y\",\"text\":\"Optimized molecular structure of cyclic silane (Si₄H₈), representing ring-structured silicon precursors.\"},{\"panel_id\":\"z\",\"text\":\"Optimized molecular structure of cyclic silane (Si₆H₁₂), showing larger ring geometries relevant for ALD.\"},{\"panel_id\":\"aa\",\"text\":\"Optimized molecular structure of methyl-substituted silane (SiH₃CH₃), illustrating alkyl-functionalized silicon precursors.\"},{\"panel_id\":\"bb\",\"text\":\"Optimized molecular structure of ethyl-substituted silane (SiH₃C₂H₅), showing extended alkyl substitution.\"},{\"panel_id\":\"cc\",\"text\":\"Optimized molecular structure of amino-silicon precursor (SiH₃NH₂), highlighting nitrogen functionalization.\"},{\"panel_id\":\"dd\",\"text\":\"Optimized molecular structure of alkoxy-silicon precursor (SiH₃OCH₃), illustrating oxygen-containing ligands.\"},{\"panel_id\":\"ee\",\"text\":\"Optimized molecular structure of dimethyl-substituted silane (SiH₂(CH₃)₂), showing multiple alkyl groups on silicon.\"},{\"panel_id\":\"ff\",\"text\":\"Optimized molecular structure of trimethylsilane (SiH(CH₃)₃), illustrating fully substituted alkyl silicon precursor for ALD.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"},{\"panel_id\":\"h\",\"text\":\"\"},{\"panel_id\":\"i\",\"text\":\"\"},{\"panel_id\":\"j\",\"text\":\"\"},{\"panel_id\":\"k\",\"text\":\"\"},{\"panel_id\":\"l\",\"text\":\"\"},{\"panel_id\":\"m\",\"text\":\"\"},{\"panel_id\":\"n\",\"text\":\"\"},{\"panel_id\":\"o\",\"text\":\"\"},{\"panel_id\":\"p\",\"text\":\"\"},{\"panel_id\":\"q\",\"text\":\"\"},{\"panel_id\":\"r\",\"text\":\"\"},{\"panel_id\":\"s\",\"text\":\"\"},{\"panel_id\":\"t\",\"text\":\"\"},{\"panel_id\":\"u\",\"text\":\"\"},{\"panel_id\":\"v\",\"text\":\"\"},{\"panel_id\":\"w\",\"text\":\"\"},{\"panel_id\":\"x\",\"text\":\"\"},{\"panel_id\":\"y\",\"text\":\"\"},{\"panel_id\":\"z\",\"text\":\"\"},{\"panel_id\":\"aa\",\"text\":\"\"},{\"panel_id\":\"bb\",\"text\":\"\"},{\"panel_id\":\"cc\",\"text\":\"\"},{\"panel_id\":\"dd\",\"text\":\"\"},{\"panel_id\":\"ee\",\"text\":\"\"},{\"panel_id\":\"ff\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Modeling a wide variety of precursor structures allows researchers to assess how different bonding environments, functional groups, and molecular sizes influence reaction energetics and thermodynamic feasibility for SiC formation. Since ALD relies on self-limiting surface reactions at relatively low temperatures, precursor chemistry plays a critical role in determining growth behavior. By comparing diverse molecules computationally, promising precursors can be identified efficiently before experimental validation, reducing trial-and-error and guiding the development of optimized ALD processes.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Saturated hydrocarbons (alkanes), Unsaturated hydrocarbons (alkenes and alkynes), Halogenated carbon compounds, Silicon hydrides, Chlorosilanes and fluorosilanes, Cyclic silicon-containing molecules, Alkyl-substituted silanes, Alkoxy- and amino-silicon precursors\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Hydrocarbon precursors contain only C and H atoms, while halogenated and silicon-containing precursors include Si–X (X = H, Cl, F) or C–X bonds that introduce higher reactivity and different thermodynamic behavior relevant to ALD processes.\"}]}]","bbox":[{"panel_id":"a","x":70,"y":13,"width":181,"height":118},{"panel_id":"b","x":259,"y":11,"width":151,"height":109},{"panel_id":"c","x":422,"y":18,"width":182,"height":124},{"panel_id":"d","x":662,"y":18,"width":235,"height":126},{"panel_id":"e","x":0,"y":172,"width":318,"height":124},{"panel_id":"f","x":340,"y":138,"width":111,"height":163},{"panel_id":"g","x":465,"y":172,"width":161,"height":114},{"panel_id":"h","x":646,"y":176,"width":183,"height":128},{"panel_id":"i","x":826,"y":211,"width":157,"height":88},{"panel_id":"j","x":55,"y":364,"width":167,"height":89},{"panel_id":"k","x":241,"y":340,"width":129,"height":103},{"panel_id":"l","x":394,"y":358,"width":111,"height":112},{"panel_id":"m","x":529,"y":342,"width":135,"height":127},{"panel_id":"n","x":634,"y":499,"width":186,"height":141},{"panel_id":"o","x":817,"y":336,"width":161,"height":138},{"panel_id":"p","x":43,"y":508,"width":127,"height":104},{"panel_id":"q","x":838,"y":495,"width":145,"height":121},{"panel_id":"r","x":191,"y":522,"width":159,"height":101},{"panel_id":"s","x":317,"y":521,"width":133,"height":121},{"panel_id":"t","x":470,"y":518,"width":138,"height":127},{"panel_id":"u","x":63,"y":688,"width":123,"height":106},{"panel_id":"v","x":225,"y":670,"width":234,"height":192},{"panel_id":"w","x":468,"y":662,"width":209,"height":140},{"panel_id":"x","x":706,"y":658,"width":246,"height":134},{"panel_id":"y","x":13,"y":869,"width":206,"height":105},{"panel_id":"z","x":225,"y":866,"width":265,"height":114},{"panel_id":"aa","x":372,"y":834,"width":306,"height":184},{"panel_id":"bb","x":495,"y":834,"width":175,"height":193},{"panel_id":"cc","x":681,"y":813,"width":286,"height":249},{"panel_id":"dd","x":60,"y":1000,"width":267,"height":231},{"panel_id":"ee","x":351,"y":1026,"width":342,"height":201},{"panel_id":"ff","x":749,"y":1063,"width":206,"height":152}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/21/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/21/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/21/Ekaterina A. Filatova et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":983,"height":1234,"image_format":"jpeg","image_sha256":"1799078d8b15d5d467359b47d1836ec821cfd29e32bb6b36447a6c54053db774","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_22_figure_1.jpg","caption":"Figure 1. Example of a DFT-calculated adsorption configuration of an aniline molecule shown in the (a) side view and (b and c) top view (gray, surface metal atoms; yellow, carbon; white, hydrogen; and blue, nitrogen). (c) Top layer metal atoms have been used to form the surface model. (d) Disks representing N, C, and H atoms have been placed on the corresponding coordinates for aniline based on their van der Waals radius. (e) Final 2D aniline footprint as input for the RSA simulations has been created as the combination of the disks into a single shape (a union). (f) Section of the substrate with adsorbed molecules as output of the RSA simulation.","id":"test/atomic-layer-deposition/simulation-usecase/22/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/22/figure_1","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows a DFT-calculated side view of an aniline molecule adsorbed flat on a metal surface, highlighting the atomic positions (C, N, H) relative to the top-layer metal atoms.\"},{\"panel_id\":\"b\",\"text\":\"provides a top view of the same adsorption geometry, showing how the aromatic ring aligns with the metal lattice, illustrating adsorption orientation and registry.\"},{\"panel_id\":\"c\",\"text\":\"displays only the top layer metal atoms extracted from the original DFT structure to create a simplified 2D surface grid for RSA modeling.\"},{\"panel_id\":\"d\",\"text\":\"shows overlapping van der Waals spheres of each atom (C, N, H), whose union forms the molecular footprint used to determine steric blocking for RSA adsorbate packing simulations.\"},{\"panel_id\":\"e\",\"text\":\"presents the final 2D molecular footprint shape, derived from atomic overlaps, which represents the exclusion zone an aniline molecule occupies on the surface.\"},{\"panel_id\":\"f\",\"text\":\"shows a Random Sequential Adsorption (RSA) simulation, where multiple aniline footprints are placed across the surface, demonstrating molecular crowding and surface coverage behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The footprint defines how much surface area each aniline molecule occupies, controlling steric blocking during adsorption. In RSA simulations, this footprint determines the maximum achievable surface coverage and molecular arrangement, allowing realistic modeling of adsorption density and spatial distribution as shown in panel (f).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Panel (d) replaces atomic models with van der Waals disks, whereas panels (a–c) use ball-and-stick structural representations.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes — the footprint is generated by combining van der Waals disks of each atom to form a single union shape.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"N atom van der Waals radius, C atom van der Waals radii, H atom van der Waals radii, Molecular orientation on the surface\"}]}]","bbox":[{"panel_id":"a","x":11,"y":40,"width":293,"height":232},{"panel_id":"b","x":322,"y":36,"width":292,"height":234},{"panel_id":"c","x":10,"y":312,"width":297,"height":229},{"panel_id":"d","x":320,"y":287,"width":295,"height":262},{"panel_id":"e","x":14,"y":566,"width":290,"height":257},{"panel_id":"f","x":321,"y":566,"width":296,"height":263}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/I. Tezsevin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":619,"height":833,"image_format":"jpeg","image_sha256":"36474ae5d91ef4e1d174633c76c508fd667835b729863727e42381fa93f7e1ac","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_22_figure_2.jpg","caption":"Figure 2. DFT-optimized aniline adsorption configurations and energies on (a) $\\mathrm{Ru}(0001)$ and (b) $\\mathrm{Co}(0001)$ surfaces representing the non-growth areas and (c) $\\mathrm{SiO}_2(0001)$ surface representing the growth area. The top layer metals are represented in a different color for better top view visualization.","id":"test/atomic-layer-deposition/simulation-usecase/22/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/22/figure_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows three DFT-optimized adsorption geometries of aniline on Ru(0001) in vertical and two horizontal orientations, with both top-view and side-view visualizations. Adsorption energies show strongest binding for horizontal configurations (up to −3.59 eV), highlighting the strong interaction between aniline and the Ru surface.\"},{\"panel_id\":\"b\",\"text\":\"illustrates aniline adsorption on Co(0001) for similar vertical and horizontal orientations. Although the geometries resemble those on Ru, the adsorption energies (−0.90 to −2.17 eV) reveal consistently weaker interaction than on Ru, indicating Co is less reactive toward aniline adsorption.\"},{\"panel_id\":\"c\",\"text\":\"presents two weakly bound physisorption states of aniline on SiO₂(0001). With small adsorption energies (−0.39 and −0.57 eV), the molecule remains mostly undistorted and only loosely interacts with the oxide surface, consistent with SiO₂ being a growth-permissive rather than growth-blocking substrate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Comparing adsorption on different surfaces reveals how strongly aniline can block growth on metals versus oxides. Strong adsorption on Ru and Co suggests effective surface inhibition, while weak adsorption on SiO₂ means the molecule desorbs easily, allowing selective growth on oxides. This contrast is essential for designing high-selectivity ALD/ALE processes where controlled deposition or removal depends on surface-dependent binding energies.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ru(0001) shows the strongest adsorption, with ΔE_ads as low as −3.59 eV.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes each orientation requires a separate DFT geometry optimization before calculating ΔE_ads.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"π–d interaction between the benzene ring and the metal surface, Orientation of the aromatic ring relative to surface atoms, Metal surface reactivity (Ru > Co > SiO₂), N lone-pair interaction with surface metal atoms, Surface lattice coordination and available adsorption sites\"}]}]","bbox":[{"panel_id":"a","x":3,"y":7,"width":602,"height":472},{"panel_id":"b","x":5,"y":490,"width":606,"height":460},{"panel_id":"c","x":3,"y":977,"width":609,"height":411}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/I. Tezsevin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":614,"height":1389,"image_format":"jpeg","image_sha256":"42ced8ee46e0df34b78b92cbb44797521e24a9cbb9b8fbb593fba055d452ad40","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_22_figure_3.jpg","caption":"Figure 3. DFT-optimized TDMAT adsorption configurations and energies on a bare $\\mathrm{Ru(0001)}$ b $\\mathrm{Ru(0001)}$ functionalized with aniline, c) bare $\\mathrm{Co(0001)}$ and d $\\mathrm{Co(0001)}$ functionalized with aniline (the light blue spheres represent Ti atoms, and the top layer metals are represented in a different color for better top view visualization).","id":"test/atomic-layer-deposition/simulation-usecase/22/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/22/figure_3","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows TDMAT strongly chemisorbing onto the clean Ru(0001) surface. Both side and top views highlight Ti–surface interaction, with a strong adsorption energy of −2.23 eV, indicating high precursor affinity for Ru.\"},{\"panel_id\":\"b\",\"text\":\"demonstrates that once Ru(0001) is pre-covered with aniline, TDMAT adsorption weakens substantially (−0.87 eV). The views illustrate steric blocking and reduced contact area with the surface.\"},{\"panel_id\":\"c\",\"text\":\"displays TDMAT adsorption on clean Co(0001), showing moderate binding (−1.86 eV). The geometry suggests less surface–precursor interaction compared to Ru but still strong enough to support growth.\"},{\"panel_id\":\"d\",\"text\":\"shows TDMAT adsorption on aniline-functionalized Co(0001), with greatly reduced adsorption (−0.90 eV). Aniline blocks active sites similarly to Ru, reducing precursor adhesion.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"When aniline pre-adsorbs on Ru or Co, it blocks active sites that TDMAT requires for chemisorption, reducing ΔEₐds by more than half. This suppression of strong binding prevents precursor attachment, effectively inhibiting growth on those metal regions. Meanwhile, growth can still proceed on unfunctionalized areas such as oxides, enabling controlled area-selective ALD through chemical contrast in adsorption strength.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TDMAT adsorbs most strongly on bare Ru(0001) with ΔEₐds = −2.23 eV.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes — the DFT workflow must include an initial optimization of the aniline-covered surface before placing the TDMAT precursor.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Presence or absence of aniline functionalization, Surface metal type (Ru vs Co), Accessibility of metal active sites, Orientation of the TDMAT ligand cage, Degree of steric blocking by adsorbed aniline\"}]}]","bbox":[{"panel_id":"a","x":1,"y":41,"width":322,"height":757},{"panel_id":"b","x":347,"y":15,"width":264,"height":773},{"panel_id":"c","x":3,"y":882,"width":315,"height":648},{"panel_id":"d","x":354,"y":819,"width":257,"height":710}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/I. Tezsevin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":614,"height":1536,"image_format":"jpeg","image_sha256":"46a1a4db82cbc260cea90b850d93a50e37b87f47eccadf1463f42636ec4a837c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_22_figure_5.jpg","caption":"Figure 5. (a) Aniline hydrogenolysis on metal (Ru and Co) surfaces and (b and c) effective gap distributions on Ru and Co model surfaces after hydrogenolysis. The blue dashed line at $0.49 \\mathrm{nm}$ represents the size of the TDMAT precursor. Insets show sample sections from the visual RSA outputs.","id":"test/atomic-layer-deposition/simulation-usecase/22/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/22/figure_5","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"bar chart"},{"panel_id":"c","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows the hydrogenolysis reaction of adsorbed aniline on Ru(0001) and Co(0001) surfaces. Upon exposure to H₂, the surface-bound aniline decomposes into surface-adsorbed C₆H₆ fragments and NH₃. The adsorption energies (−0.89 eV for Ru and −0.94 eV for Co) indicate the stability of the post-reaction species.\"},{\"panel_id\":\"b\",\"text\":\"presents a histogram of the remaining effective gap sizes on Ru(0001) after hydrogenolysis. Most gaps remain below 0.25 nm, far smaller than the 0.49 nm radius required for TDMAT access. The inset shows a dense RSA configuration, indicating Ru retains strong blocking capability even after inhibitor decomposition.\"},{\"panel_id\":\"c\",\"text\":\"provides the same analysis for Co(0001). Co exhibits a broader distribution with more mid-range gaps (0.25–0.35 nm), reflecting reduced packing efficiency after hydrogenolysis. The RSA inset reveals more open regions than Ru, implying weaker precursor blocking and lower selectivity.\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"| Effective gap size (nm) | Surface density (nm^-2) |\\n|---|---|\\n| 0.20 | 0.11 |\\n| 0.25 | 0.05 |\\n| 0.30 | 0.00 |\\n| 0.35 | 0.00 |\\n| 0.40 | 0.00 |\\n| 0.45 | 0.00 |\\n| 0.50 | 0.00 |\"},{\"panel_id\":\"c\",\"text\":\"| Effective gap size (nm) | Surface density (nm^-2) |\\n|---|---|\\n| 0.20 | 0.06 |\\n| 0.25 | 0.00 |\\n| 0.30 | 0.00 |\\n| 0.35 | 0.00 |\\n| 0.40 | 0.00 |\\n| 0.45 | 0.00 |\\n| 0.50 | 0.00 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Gap-size analysis determines whether the remaining openings between surface fragments are large enough to allow the TDMAT precursor to adsorb. Since TDMAT requires at least ~0.49 nm of accessible space, surfaces that retain only sub-threshold gaps will continue to block precursor adsorption effectively. Ru maintains gaps far below this threshold, preserving inhibitor effectiveness, while Co develops larger openings that may permit TDMAT infiltration, reducing selectivity. This analysis directly links post-reaction surface morphology with ALD blocking performance.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ru(0001) retains smaller gaps.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes each effective gap is determined by the minimum distance from an empty site to adjacent inhibitor residues after hydrogenolysis.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Loss of the NH₂ group, Conversion to a smaller benzene fragment, Reduced lateral footprint on the surface, Surface-dependent packing rearrangements, Residual binding strength differences on Ru vs Co\"}]}]","bbox":[{"panel_id":"a","x":41,"y":26,"width":246,"height":363},{"panel_id":"b","x":330,"y":13,"width":397,"height":376},{"panel_id":"c","x":750,"y":15,"width":400,"height":374}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/22/I. Tezsevin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1150,"height":389,"image_format":"jpeg","image_sha256":"6df7818eff522ed218fadaf5b22301ea37fa7cbeda11f326977cd78815f0fc64","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_37_fig_2.jpg","caption":"Fig. 2. Packing of $\\mathrm{CH_4}$ molecules at a $\\mathrm{C} - \\mathrm{C}$ distance $R$ , computed by FP. (a) Model of close-packed $\\mathrm{CH_4}$ , constrained with $\\mathrm{H}^1$ - $\\mathrm{C}$ along $z$ , representing the surface $\\mathrm{Al - CH}_3$ bond. (b) Computed FP energetics (left axis) and optimised $\\mathrm{C} - \\mathrm{H}$ distances (right axis), excluding the $z$ -oriented $\\mathrm{C} - \\mathrm{H}^1$ .","id":"test/atomic-layer-deposition/simulation-usecase/37/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/37/fig_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Model of a single hexagonal close-packed layer of CH4 molecules, with the H1–C bond constrained along the z-axis to represent the surface Al–CH3 bond.\"},{\"panel_id\":\"b\",\"text\":\"First-principles (FP) computed energetics as a function of C–C distance, R, along with the optimized C–H bond lengths (excluding the z-oriented H1–C bond). The plot illustrates how steric strain affects both the energy and C–H bond distances at different CH3 surface coverages.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Model | Description |\\n|---|---|\\n| Close-packed CH₄ | H1–C constrained along z, representing the surface Al–CH₃ bond |\"},{\"panel_id\":\"b\",\"text\":\"| RC–C (Å) | ΔE (eV) | Optimized C–H (Å) |\\n|---|---|---|\\n| 2.5 | 5.0 | 1.10 |\\n| 3.0 | 4.5 | 1.09 |\\n| 3.5 | 4.0 | 1.08 |\\n| 4.0 | 3.0 | 1.07 |\\n| 4.5 | 2.0 | 1.06 |\\n| 5.0 | 1.5 | 1.05 |\\n| 5.5 | 1.0 | 1.04 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the C–C distance decreases below 3.8 Å, strain increases, leading to contraction of the C–H bonds and a higher energy penalty (ΔE). At R > 3.8 Å, there is minimal CH3–CH3 interaction, indicating negligible steric strain.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A single hexagonal close-packed layer of CH4 molecules is used, with the H1–C bond constrained along the z-axis to mimic the vertical orientation of the Al–CH3 bond on the surface.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, it is important for controlling ALD surface chemistry.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"CH3–CH3 interaction becomes negligible at R > 3.8 Å, where ΔE < 0.2 eV and C–H bond lengths approach 1.10 Å, At smaller distances (R ≤ 3.0 Å), interaction is significant, ΔE increases (up to 1.8 eV), and C–H bonds contract to around 1.05 Å\"}]}]","bbox":[{"panel_id":"a","x":123,"y":8,"width":496,"height":352},{"panel_id":"b","x":7,"y":395,"width":789,"height":460}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/Simon D. Elliott.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":800,"height":858,"image_format":"jpeg","image_sha256":"99eb3f7f84256f97b6b848812e2fc2e7840498e42213075ac123b7b611803fb3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_37_fig_3.jpg","caption":"Fig. 3. Fully-hydroxylated gibbsite-like termination of $\\alpha -\\mathrm{Al}_2\\mathrm{O}_3$ computed by FP (light grey = Al, dark grey = C, white = H).","id":"test/atomic-layer-deposition/simulation-usecase/37/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/37/fig_3","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 3 presents a first-principles–computed atomic model of a fully hydroxylated, gibbsite-like termination of α-Al₂O₃. The surface is saturated with OH groups formed by dissociative adsorption of H₂O, representing the chemically stable termination expected after the water half-cycle in alumina ALD. Aluminum, carbon, and hydrogen atoms are distinguished by color to clearly illustrate the surface hydroxyl network and its local bonding environment.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Parameter | Value |\\n|---|---|\\n| Surface termination | Fully hydroxylated gibbsite-like Al(OH)₃ |\\n| Surface H coverage [H] | 26 μmol m⁻² |\\n| Adsorption mechanism | Dissociative chemisorption of H₂O |\\n| Adsorption energy (ΔE) | −1.5 ± 0.1 eV per H₂O |\\n| Calculation method | First-principles (FP) |\\n| Additional molecular H₂O adsorption | Hydrogen-bonded networks |\\n| O–H hydrogen bond length | 1.6–2.2 Å |\\n| Molecular H₂O adsorption energy | −0.7 to −0.8 eV per H₂O |\\n| Behavior during purge | Molecular H₂O fully desorbs; partial OH recombination |\\n| Final surface state | Partially hydroxylated, [H] < 26 μmol m⁻² |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The fully hydroxylated gibbsite-like termination exhibits the maximum surface hydrogen coverage, with OH groups saturating all available reactive surface sites. In contrast, a partially hydroxylated alumina surface has fewer OH groups due to recombination and desorption of H₂O during the purge step, resulting in a lower hydrogen surface concentration. This difference directly affects surface reactivity in subsequent ALD half-cycles.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"It provides a uniform and well-defined density of reactive –OH sites, It enables self-limiting chemisorption of TMA in the next ALD half-cycle, It prevents uncontrolled accumulation of surface intermediates, It supports stoichiometric and reproducible Al₂O₃ film growth\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A dense, gibbsite-like network of surface hydroxyl (–OH) groups.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":558,"height":336}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/Simon D. Elliott.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":558,"height":336,"image_format":"jpeg","image_sha256":"c8f9e51fa919cb4806d282c5bf713d4d3d2d61ca337ec2f901d6e170dbb82c34","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_41_fig1.jpg","caption":"Fig.1 Structure of the $\\mathrm{Cu(acac)_2}$ precursor.","id":"test/atomic-layer-deposition/simulation-usecase/41/fig1","sample_id":"atomic-layer-deposition/simulation-usecase/41/fig1","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The molecular structure diagram depicting the arrangement of atoms in the Cu(acac)2​ precursor molecule\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The central atom is Cu, and it is bonded to red O atoms.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Four O donors total. Two acetylacetonate ligands provide them.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The structure shows that Cu is bound through oxygen atoms of chelating ligands, which defines the starting coordination environment. During adsorption and subsequent surface chemistry, those Cu to O and C to O linkages are the ones that can distort, weaken, or break as ligands are removed. This is why the paper presents the precursor structure before analyzing adsorption and dissociation on Cu and Cu oxide surfaces.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cu(acac).\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":425,"height":305}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/Xiao Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":425,"height":305,"image_format":"jpeg","image_sha256":"fb97f63cf77872ad4859f05e2fe90eee812d2ec4eb8f97491509f637349d1bdc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_41_fig_10.jpg","caption":"Fig. 10 RMD snapshots for H abstraction (a and b), O insertion (c and d), water formation (e and f) observed during the reaction between $\\mathrm{Cu(acac)}_2$ and ozone on the $\\mathrm{CuO}(111)$ surface.","id":"test/atomic-layer-deposition/simulation-usecase/41/fig_10","sample_id":"atomic-layer-deposition/simulation-usecase/41/fig_10","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"RMD snapshot at 16.4 ps showing Cu(acac)2 on a CuO(111) surface with an ozone molecule nearby, just before hydrogen abstraction.\"},{\"panel_id\":\"b\",\"text\":\"RMD snapshot at 16.8 ps showing hydrogen abstraction by ozone, with formation of an OH species and an O2 molecule near the adsorbed precursor.\"},{\"panel_id\":\"c\",\"text\":\"RMD snapshot at 93.9 ps illustrating an oxygen insertion event involving the methyl group, with oxidized fragments and nearby O containing species above the surface.\"},{\"panel_id\":\"d\",\"text\":\"RMD snapshot at 94.3 ps continuing the oxygen insertion pathway, with the precursor fragment still near the surface and additional O containing species present.\"},{\"panel_id\":\"e\",\"text\":\"RMD snapshot at 98.3 ps during the water formation stage, showing smaller oxidized organic fragments and emerging H2O related species above the surface.\"},{\"panel_id\":\"f\",\"text\":\"RMD snapshot at 99.4 ps showing a water molecule present above the surface after OH reacts further, alongside remaining oxidized organic fragments.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It represents the CuO(111) surface lattice used in the simulation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Hydrogen abstraction from the ligand, oxygen insertion into C to H bonds, and formation of H2O from reactive oxygen and hydrogen containing intermediates.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In (a) and (b), the Cu(acac)2 framework remains largely intact on the surface, with ozone initiating early chemistry through hydrogen abstraction. By (e) and (f), the scene is dominated by smaller oxidized fragments rather than a single intact precursor, and water is present as a reaction product. Overall, the snapshots depict progressive oxidation and fragmentation of the ligand during the ozone exposure.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"(a) and (b) correspond to hydrogen abstraction. After the abstraction, an OH species and an O2 molecule are shown.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":7,"width":216,"height":229},{"panel_id":"b","x":229,"y":4,"width":213,"height":233},{"panel_id":"c","x":447,"y":5,"width":219,"height":227},{"panel_id":"d","x":3,"y":239,"width":222,"height":237},{"panel_id":"e","x":227,"y":239,"width":235,"height":238},{"panel_id":"f","x":452,"y":240,"width":213,"height":234}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/Xiao Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":664,"height":475,"image_format":"jpeg","image_sha256":"d40ea9e545390415d9007c5b9d40ee8cbb7a304c39f37ac64f3c64ffdd03a15a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_41_fig_11.jpg","caption":"Fig. 11 RMD snapshots for C-C breaking observed during the reaction between $\\mathrm{Cu(acac)_2}$ and ozone on the $\\mathrm{CuO(111)}$ surface.","id":"test/atomic-layer-deposition/simulation-usecase/41/fig_11","sample_id":"atomic-layer-deposition/simulation-usecase/41/fig_11","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"RMD snapshot for C C breaking observed during the reaction between Cu(acac)2 and ozone on the CuO(111) surface, at t = 92.2 ps\"},{\"panel_id\":\"b\",\"text\":\"RMD snapshot for C C breaking observed during the reaction between Cu(acac)2 and ozone on the CuO(111) surface, at t = 93.2 ps\"},{\"panel_id\":\"c\",\"text\":\"RMD snapshot for C C breaking observed during the reaction between Cu(acac)2 and ozone on the CuO(111) surface, at t = 93.8 ps\"},{\"panel_id\":\"d\",\"text\":\"RMD snapshot for C C breaking observed during the reaction between Cu(acac)2 and ozone on the CuO(111) surface, at t = 69.7 ps\"},{\"panel_id\":\"e\",\"text\":\"RMD snapshot for C C breaking observed during the reaction between Cu(acac)2 and ozone on the CuO(111) surface, at t = 70.2 ps\"},{\"panel_id\":\"f\",\"text\":\"RMD snapshot for C C breaking observed during the reaction between Cu(acac)2 and ozone on the CuO(111) surface, at t = 146.6 ps\"},{\"panel_id\":\"g\",\"text\":\"RMD snapshot for C C breaking observed during the reaction between Cu(acac)2 and ozone on the CuO(111) surface, at t = 146.9 ps\"},{\"panel_id\":\"h\",\"text\":\"RMD snapshot for C C breaking observed during the reaction between Cu(acac)2 and ozone on the CuO(111) surface, at t = 147.6 ps\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| figure_label | time_step(ps) |\\n|---|---|\\n| a | 92.2 |\\n| b | 93.2 |\\n| c | 93.8 |\\n| d | 69.7 |\\n| e | 70.2 |\\n| f | 146.6 |\\n| g | 146.9 |\\n| h | 147.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The blue sphere represents the Cu atom of the Cu(acac)2 precursor fragment interacting with the CuO(111) surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The snapshots support a combustion like ligand removal chemistry under ozone exposure, where organic ligands can undergo deep oxidation and fragmentation rather than only simple ligand exchange. This is consistent with forming small oxidized by products and surface hydroxyl species, which can help reduce carbon contamination on the growing film. In an ALD context, this helps rationalize why ozone can be an effective co reactant for depositing copper oxide from Cu(acac)2.\"}]},{\"panel_id\":\"h\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In a to c, C to C cleavage leads to methylglyoxal and ethenone, plus an adsorbed hydroxyl group on the surface.\\n\\nIn d to h, continued adsorption of two oxygen atoms leads to methylglyoxal in the gas phase and acetate formation, with acetate described as readily desorbing from the surface.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"First, an oxygen atom adsorbs at the ligand C to C bridge site and forms an epoxide like intermediate. Next, the C to C bond is cleaved through an epoxy ether type transformation while the ligand detaches from the surface bound Cu center. Finally, the detached complex dissociates, producing methylglyoxal and ethenone in the gas phase and leaving an adsorbed hydroxyl group on the surface.\"}]}]","bbox":[{"panel_id":"a","x":7,"y":5,"width":219,"height":204},{"panel_id":"b","x":232,"y":7,"width":220,"height":206},{"panel_id":"c","x":454,"y":7,"width":210,"height":205},{"panel_id":"d","x":667,"y":4,"width":210,"height":207},{"panel_id":"e","x":5,"y":208,"width":223,"height":205},{"panel_id":"f","x":234,"y":210,"width":213,"height":201},{"panel_id":"g","x":450,"y":209,"width":209,"height":202},{"panel_id":"h","x":671,"y":208,"width":211,"height":204}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/Xiao Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":880,"height":411,"image_format":"jpeg","image_sha256":"6aa413e50af5be3f5c3e4196e8d9b53f2585cfec433e47f9c693a2e413f8e7e2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_41_fig_2.jpg","caption":"Fig. 2 Adsorption sites (a) and optimized geometries of different adsorbed species $(b - g)$ on the $\\mathrm{Cu(110)}$ surface calculated using the DFT-PBE functional. The adsorption geometries calculated using vdW-DF and ReaxFF are similar to that calculated using DFT-PBE and are thus not shown here.","id":"test/atomic-layer-deposition/simulation-usecase/41/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/41/fig_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Adsorption sites on the Cu(110) surface labeled top (T), hollow (H), bridge1 (B1), and bridge2 (B2).\"},{\"panel_id\":\"b\",\"text\":\"Optimized geometry of Cu(acac)2 adsorbed on the top site of Cu(110), labeled Cu(acac)2@T.\"},{\"panel_id\":\"c\",\"text\":\"Optimized geometry of Cu(acac)2 adsorbed on the bridge1 site of Cu(110), labeled Cu(acac)2@B1.\"},{\"panel_id\":\"d\",\"text\":\"Optimized geometry of Cu(acac)2 adsorbed on the hollow site of Cu(110), labeled Cu(acac)2@H.\"},{\"panel_id\":\"e\",\"text\":\"Optimized geometry of an adsorbed Cu atom on Cu(110).\"},{\"panel_id\":\"f\",\"text\":\"Optimized geometry of Cu(acac) adsorbed on Cu(110).\"},{\"panel_id\":\"g\",\"text\":\"Optimized geometry of an adsorbed acac ligand on Cu(110).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They label the top, hollow, bridge1, and bridge2 adsorption sites on the Cu(110) surface.\"}]},{\"panel_id\":\"g\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Intact Cu(acac)2 is shown in (b), (c), and (d). Dissociation products are shown in (e) Cu, (f) Cu(acac), and (g) acac.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The comparison supports the proposed sequential dissociation pathway Cu(acac)2 to Cu(acac) to Cu on Cu(110). It also shows that acac can remain strongly adsorbed, which can block sites and contribute to self limiting growth behavior. Together, these adsorption motifs help interpret how precursor activation and ligand retention can shape the ALD half cycle.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Cu(acac)2 is described as preferring a parallel orientation on the top and bridge1 sites, while it becomes strongly bound and distorted on the hollow site. In contrast, Cu(acac) and acac are described as preferring a perpendicular orientation relative to the surface normal. This highlights that fragmentation changes not only the chemical identity but also the preferred adsorption geometry.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":6,"width":254,"height":382},{"panel_id":"b","x":264,"y":8,"width":240,"height":193},{"panel_id":"c","x":263,"y":207,"width":246,"height":190},{"panel_id":"d","x":508,"y":4,"width":245,"height":202},{"panel_id":"e","x":513,"y":210,"width":242,"height":187},{"panel_id":"f","x":755,"y":4,"width":192,"height":196},{"panel_id":"g","x":761,"y":205,"width":187,"height":192}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/Xiao Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":947,"height":397,"image_format":"jpeg","image_sha256":"5df9d3fe9ece601d5b13a40ce3754e7732d646305ee2623f15913a818a72660b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_41_fig_4.jpg","caption":"Fig. 4 Geometric structures and Mulliken charge for the dissociation of $\\mathrm{Cu(acac)_2}$ on the $\\mathrm{Cu(110)}$ surface calculated using the DFT-PBE functional. Values shown in blue and black colors represent the charge of the $\\mathrm{Cu}$ atom and the acac-ligand of the $\\mathrm{Cu}$ precursor, respectively.","id":"test/atomic-layer-deposition/simulation-usecase/41/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/41/fig_4","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"},{"panel_id":"h","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"DFT PBE geometry and Mulliken charges for Cu(acac)2 in the gas phase, Cu(acac)2(g).\"},{\"panel_id\":\"b\",\"text\":\"DFT PBE geometry and Mulliken charges for Cu(acac)2 adsorbed at the hollow site on Cu(110), Cu(acac)2@H.\"},{\"panel_id\":\"c\",\"text\":\"DFT PBE geometry and Mulliken charges for the first dissociation transition state on Cu(110), TS1.\"},{\"panel_id\":\"d\",\"text\":\"DFT PBE geometry and Mulliken charges for the products after the first dissociation step on Cu(110), acac plus Cu(acac).\"},{\"panel_id\":\"e\",\"text\":\"DFT PBE geometry and Mulliken charges for Cu(acac)2 adsorbed at the top site on Cu(110), Cu(acac)2@T.\"},{\"panel_id\":\"f\",\"text\":\"DFT PBE geometry and Mulliken charges for the Cu(acac) fragment on Cu(110), Cu(acac).\"},{\"panel_id\":\"g\",\"text\":\"DFT PBE geometry and Mulliken charges for the second dissociation transition state on Cu(110), TS2.\"},{\"panel_id\":\"h\",\"text\":\"DFT PBE geometry and Mulliken charges for the products after the second dissociation step on Cu(110), acac plus Cu.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"},{\"panel_id\":\"h\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Blue numbers are the Mulliken charge of the Cu atom, and black numbers are the Mulliken charge of the acac ligand.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Cu charge decreases stepwise along the pathway, from about 1.19 e in Cu(acac)2(g) to about 0.08 e in the final acac plus Cu state. This trend indicates sequential reduction of the Cu center during adsorption and ligand loss. The paper interprets the endpoint as formation of a near zero valence metallic Cu atom on the surface.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Panel c shows the first transition state, labeled TS1\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Cu(acac)2 dissociates to Cu(acac) plus acac via TS1.\\n\\n, Cu(acac) dissociates to Cu plus acac via TS2.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":0,"width":246,"height":227},{"panel_id":"b","x":256,"y":0,"width":230,"height":227},{"panel_id":"c","x":494,"y":0,"width":227,"height":226},{"panel_id":"d","x":710,"y":3,"width":232,"height":229},{"panel_id":"e","x":0,"y":233,"width":253,"height":204},{"panel_id":"f","x":247,"y":231,"width":246,"height":206},{"panel_id":"g","x":489,"y":238,"width":227,"height":199},{"panel_id":"h","x":719,"y":233,"width":223,"height":204}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/Xiao Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":947,"height":439,"image_format":"jpeg","image_sha256":"40fb7e4d1fc3d6fab69f286cfd5ece06e90c585bb10feefe0a4a785d16119c7b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_41_fig_5.jpg","caption":"Fig. 5 RMD snapshots for the dissociation of $\\mathrm{Cu(acac)}_2$ on the $\\mathrm{Cu(110)}$ surface.","id":"test/atomic-layer-deposition/simulation-usecase/41/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/41/fig_5","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"RMD snapshot for Cu(acac)2 on the Cu(110) surface at the initial state, prior to dissociation.\"},{\"panel_id\":\"b\",\"text\":\"RMD snapshot for Cu O bond breaking and acac ligand tilting during Cu(acac)2 dissociation on the Cu(110) surface, at t = 7.3 ps.\"},{\"panel_id\":\"c\",\"text\":\"RMD snapshot for complete dissociation of one acac ligand from Cu(acac)2, forming surface acac and Cu(acac) species on Cu(110), at t = 10.8 ps.\"},{\"panel_id\":\"d\",\"text\":\"RMD snapshot for further dissociation of Cu(acac) into surface Cu and acac species on Cu(110), at t = 18.5 ps.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The blue slab represents the Cu(110) surface.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 10.8 ps, one acac ligand has fully dissociated from Cu(acac)2, leaving surface acac and a surface Cu(acac) fragment. At 18.5 ps, the remaining Cu(acac) fragment dissociates further. This produces surface Cu and an additional surface acac species\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Breaking of a Cu O bond accompanied by tilting of an acac ligand.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":5,"width":235,"height":186},{"panel_id":"b","x":239,"y":4,"width":233,"height":184},{"panel_id":"c","x":3,"y":201,"width":238,"height":178},{"panel_id":"d","x":242,"y":199,"width":228,"height":177}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/Xiao Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":472,"height":378,"image_format":"jpeg","image_sha256":"d2e55612277f31bf14e1b1f2c86ce01bd8aaecf2a102da7d45efadd43e551596","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_41_fig_7.jpg","caption":"Fig. 7 RMD snapshots for the reaction between $\\mathrm{Cu(acac)_2}$ and H atoms on the $\\mathrm{Cu(110)}$ surface.","id":"test/atomic-layer-deposition/simulation-usecase/41/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/41/fig_7","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"},{"panel_id":"h","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"RMD snapshot for the reaction between Cu(acac)2 and H atoms on the Cu(110) surface, at t = 9.7 ps.\"},{\"panel_id\":\"b\",\"text\":\"RMD snapshot showing formation and release of a H2(acac) molecule during the reaction between Cu(acac)2 and H atoms on the Cu(110) surface, at t = 14.6 ps.\"},{\"panel_id\":\"c\",\"text\":\"RMD snapshot for a subsequent intermediate after H impact during the reaction between Cu(acac)2 and H atoms on the Cu(110) surface, at t = 14.7 ps.\"},{\"panel_id\":\"d\",\"text\":\"RMD snapshot showing oxygen abstraction leading to H2O release during the reaction between Cu(acac)2 and H atoms on the Cu(110) surface, at t = 15.2 ps.\"},{\"panel_id\":\"e\",\"text\":\"RMD snapshot for later stage organic fragmentation products during the reaction between Cu(acac)2 and H atoms on the Cu(110) surface, at t = 20.1 ps.\"},{\"panel_id\":\"f\",\"text\":\"RMD snapshot showing formation of ethane and acetone during the reaction between Cu(acac)2 and H atoms on the Cu(110) surface, at t = 20.3 ps.\"},{\"panel_id\":\"g\",\"text\":\"RMD snapshot for a late stage hydrocarbon fragment after continued hydrogen reactions during the reaction between Cu(acac)2 and H atoms on the Cu(110) surface, at t = 22.2 ps.\"},{\"panel_id\":\"h\",\"text\":\"RMD snapshot showing methane production during the reaction between Cu(acac)2 and H atoms on the Cu(110) surface, at t = 22.4 ps.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"},{\"panel_id\":\"h\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The paper reports that HxO formation starts slightly earlier (about 10 ps earlier) than CxHy formation. This indicates that atomic H reacts first with the oxygen in the Cu precursor, before extensive carbon hydrogenation and fragmentation occurs. This sequencing is consistent with early oxygen containing products such as H2O appearing before the hydrocarbon products dominate\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They represent atomic hydrogen (H) present above the Cu(110) surface in the reactive MD simulation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Their RMD shows molecular H2 hardly reacts with Cu(acac)2 at 600 K, so it is not an effective ligand removal agent in this model.\\n\\nAtomic H is reported to be very reactive, promoting Cu O bond breaking and subsequent ligand fragmentation into volatile HxO and CxHy products.\\n\\nThis behavior is intended to represent the chemically active species created in a hydrogen plasma during plasma enhanced ALD.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"H2(acac) is formed and released at about 14.6 ps.\\n\\nH2O is released at about 15.2 ps.\\n\\nEthane and acetone form at about 20.3 ps.\\n\\nMethane is produced at about 22.4 ps.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":7,"width":216,"height":207},{"panel_id":"b","x":224,"y":6,"width":214,"height":217},{"panel_id":"c","x":441,"y":4,"width":214,"height":212},{"panel_id":"d","x":661,"y":4,"width":202,"height":211},{"panel_id":"e","x":5,"y":224,"width":199,"height":195},{"panel_id":"f","x":210,"y":224,"width":252,"height":194},{"panel_id":"g","x":470,"y":220,"width":203,"height":199},{"panel_id":"h","x":678,"y":225,"width":183,"height":193}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/Xiao Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":864,"height":419,"image_format":"jpeg","image_sha256":"4a4e7a7fcbf0146df57d69329565e19f7f50d0c50e241e6c292f03d1dfcb3962","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_41_fig_9.jpg","caption":"Fig. 9 RMD snapshots for the reaction between $\\mathrm{Cu(acac)}_2$ and $\\mathrm{H}_2\\mathrm{O}$ on the $\\mathrm{Cu}_2\\mathrm{O}(111)$ surface.","id":"test/atomic-layer-deposition/simulation-usecase/41/fig_9","sample_id":"atomic-layer-deposition/simulation-usecase/41/fig_9","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"RMD snapshot for the Cu(acac)2 plus H2O reaction on the Cu2O(111) surface, showing Cu(acac)2 dissociation into Cu(acac) and acac at t = 25 ps.\"},{\"panel_id\":\"b\",\"text\":\"RMD snapshot for the Cu(acac)2 plus H2O reaction on the Cu2O(111) surface, showing H2O approaching the adsorbed Cu(acac) intermediate prior to proton transfer at t = 56.1 ps.\"},{\"panel_id\":\"c\",\"text\":\"RMD snapshot for the Cu(acac)2 plus H2O reaction on the Cu2O(111) surface, showing proton transfer from H2O to Cu(acac) to form Cu[H(acac)] and surface OH at t = 56.8 ps.\"},{\"panel_id\":\"d\",\"text\":\"RMD snapshot for the Cu(acac)2 plus H2O reaction on the Cu2O(111) surface, showing Cu O bond breaking in Cu[H(acac)] and desorption of acetylacetone H(acac) to the gas phase at t = 118.6 ps.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Cu2O(111) surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"They interpret the reaction as a ligand exchange process where surface ligands are replaced by OH groups and a protonated ligand is eliminated to the gas phase. The paper notes that similar ligand exchange steps are widely observed in water based oxide ALD, such as TMA plus H2O and Hf(NMe2)4 plus H2O. In that analogy, H2O supplies protons for ligand removal while generating surface OH that can serve as reactive sites for subsequent precursor adsorption\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the water case, the paper reports that the proton transfer occurs only after Cu(acac)2 has already fully dissociated on the surface. In contrast, for atomic H the Cu O bond cleavage is promoted upon direct H impact. This difference indicates that H2O is much less reactive toward initiating Cu O bond breaking than atomic H in these simulations.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Cu(acac)2 dissociates into Cu(acac) and acac on the surface after about 25 ps.\\n\\nA proton transfers from H2O to adsorbed Cu(acac), forming Cu[H(acac)] and surface OH after about 56.8 ps.\\n\\nThe Cu O bond of Cu[H(acac)] breaks, leading to desorption of acetylacetone H(acac) after about 118.6 ps.\"}]}]","bbox":[{"panel_id":"a","x":7,"y":6,"width":273,"height":243},{"panel_id":"b","x":282,"y":5,"width":265,"height":237},{"panel_id":"c","x":6,"y":255,"width":272,"height":224},{"panel_id":"d","x":282,"y":254,"width":268,"height":226}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/Xiao Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":550,"height":480,"image_format":"jpeg","image_sha256":"32ebfd4d3fcbcf0553f57517de58bcef5e30fa41ee272f6a68d55c475ff2598b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_46_fig1.jpg","caption":"Fig.1. a) Top and side views of a fully -OH-terminated Si (001) surface, and (b) perspective views of the optimized silane, DMAS, BDMAS, TDMAS, and TeDMAS. The $\\mathrm{Si}_{\\mathrm{surface}}$ and $X_{-OH}$ $(X = 0,\\mathrm{H})$ atoms indicate the Si atom and $X$ atom of -OH on the surface, respectively. The $X^{\\prime}$ precursor $(X^{\\prime} = \\mathrm{Si},\\mathrm{N},\\mathrm{C},$ and H) atom indicates the $X^{\\prime}$ atom in the Si precursor.","id":"test/atomic-layer-deposition/simulation-usecase/46/fig1","sample_id":"atomic-layer-deposition/simulation-usecase/46/fig1","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Top and side views of a fully hydroxyl-terminated Si(001) surface model used for density functional theory calculations, where surface –OH groups are formed on the top silicon layer, the upper layers are relaxed, and the bottom layers are fixed to represent bulk silicon, providing an ALD-relevant reactive interface.\"},{\"panel_id\":\"b\",\"text\":\"Optimized molecular geometries of silicon precursors with increasing numbers of dimethylamino (DMA) ligands, including Silane, DMAS, BDMAS, TDMAS, and TeDMAS, used to study the influence of ligand number on adsorption behavior and reaction energetics during atomic layer deposition.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This structural setup enables a controlled and systematic evaluation of how silicon precursors with varying ligand numbers interact with a hydroxylated Si(001) surface under identical conditions. By combining a realistic OH-terminated surface model with optimized precursor geometries, the figure establishes the foundation for analyzing adsorption strength, reaction pathways, and steric effects that govern ALD efficiency\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The number of DMA ligands increases systematically from 0 (Silane) to 4 (TeDMAS).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Presence of surface –OH groups, Increasing number of Si–N(DMA) bonds, Replacement of Si–H bonds by bulkier DMA ligands, Distinct surface (slab) vs molecular (precursor) geometries\"}]}]","bbox":[{"panel_id":"a","x":32,"y":3,"width":653,"height":782},{"panel_id":"b","x":4,"y":841,"width":689,"height":544}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/images/fig1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/Yong-Chan Jeong et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":700,"height":1392,"image_format":"jpeg","image_sha256":"5d014a9a4f3c7e1c71919e65c6107c88d293c24e51a0fc7fc60cb415346f58cc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_46_fig_2.jpg","caption":"Fig. 2. Adsorption configurations and energies $(E_{\\mathrm{ad}},\\mathrm{eV})$ of silane, DMAS, BDMAS, TDMAS, and TeDMAS on the surface. BDMAS has two favorable adsorption configurations: BDMAS1Si81N and BDMAS2N. In the BDMAS1Si81N configuration, the $\\mathrm{Si}_{\\mathrm{BDMS}}$ and $\\mathrm{N}_{\\mathrm{BDMS}}$ atoms were located on the $\\mathrm{O - OH}$ and $\\mathrm{H - OH}$ atoms, respectively. In the BDMAS2N configuration, the two $\\mathrm{N}_{\\mathrm{BDMS}}$ atoms were located on the two $\\mathrm{H - OH}$ atoms. The unit values are shown in $\\mathrm{\\AA}$","id":"test/atomic-layer-deposition/simulation-usecase/46/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/46/fig_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Optimized adsorption configuration of silane on a hydroxyl-terminated Si(001) surface, showing the interaction between the precursor and surface –OH groups along with the calculated adsorption energy and key interatomic distances.\"},{\"panel_id\":\"b\",\"text\":\"Adsorption geometry of DMAS on the hydroxyl-terminated Si(001) surface, illustrating precursor–surface bonding characteristics, labeled bond lengths, and the corresponding adsorption energy.\"},{\"panel_id\":\"c\",\"text\":\"First optimized adsorption configuration of BDMAS on the hydroxyl-terminated Si(001) surface, highlighting one possible adsorption pathway and its associated structural parameters and adsorption energy.\"},{\"panel_id\":\"d\",\"text\":\"Second optimized adsorption configuration of BDMAS on the hydroxyl-terminated Si(001) surface, demonstrating an alternative adsorption geometry and indicating the presence of multiple adsorption pathways.\"},{\"panel_id\":\"e\",\"text\":\"Optimized adsorption configuration of TDMAS on the hydroxyl-terminated Si(001) surface, showing increased ligand coordination effects, labeled interatomic distances, and adsorption energy.\"},{\"panel_id\":\"f\",\"text\":\"Optimized adsorption configuration of TeDMAS on the hydroxyl-terminated Si(001) surface, illustrating the influence of the highest DMA ligand count on precursor–surface interaction strength and steric effects.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Interaction | Distance (Å) |\\n|---------------------------|--------------|\\n| H(surface) – Si | 2.33 |\\n| O(surface) – H(silane) | 2.89 |\\n| Internal Si–H reference | 1.49 |\"},{\"panel_id\":\"b\",\"text\":\"| Interaction | Distance (Å) |\\n|------------------------------------|--------------|\\n| Si – surface O | 1.74 |\\n| Si – surface H | 3.03 |\\n| Internal ligand bond | 1.76 |\"},{\"panel_id\":\"c\",\"text\":\"| Interaction | Distance (Å) |\\n|--------------------------|--------------|\\n| Si – O(surface) | 1.69 |\\n| N – H(surface) | 1.76 |\\n| Secondary Si – surface | 3.12 |\"},{\"panel_id\":\"d\",\"text\":\"| Interaction | Distance (Å) |\\n|--------------------------|--------------|\\n| N – H(surface) | 1.75 |\\n| N – H(surface) | 1.83 |\\n| Internal ligand bond | 1.84 |\"},{\"panel_id\":\"e\",\"text\":\"| Interaction | Distance (Å) |\\n|--------------------------|--------------|\\n| Si – O(surface) | 1.77 |\\n| N – H(surface) | 1.76 |\\n| Secondary Si – surface | 3.20 |\"},{\"panel_id\":\"f\",\"text\":\"| Interaction | Distance (Å) |\\n|--------------------------|--------------|\\n| Si – O(surface) | 1.75 |\\n| N – H(surface) | 1.77 |\\n| Secondary Si – surface | 3.44 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure demonstrates that increasing the number of DMA ligands enhances precursor adsorption through stronger electrostatic and hydrogen-bonding interactions with surface –OH groups, which is beneficial for ALD surface saturation. However, the emergence of multiple adsorption configurations and steric crowding at higher ligand numbers indicates that strong adsorption alone does not guarantee optimal reactivity.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The adsorption energy increases from 0.16 eV (silane) to 0.84 eV (TeDMAS) with increasing DMA ligand number.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Number of DMA ligands attached to the Si atom, Presence of N···H–OH hydrogen bonding, Si···O–OH interaction distance, Steric bulk of the DMA ligands, Multiple adsorption configurations (e.g., BDMAS¹Si&¹N vs BDMAS²N)\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":608,"height":784}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/Yong-Chan Jeong et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":608,"height":784,"image_format":"jpeg","image_sha256":"85e99c3c617d7a548f692573bc09680dd8d3c8d2be1452d44ed409e4ada81ab5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_47_figure_1.jpg","caption":"Figure 1. Side views of surface models for hydroxylated alumina surfaces prior to the adsorption of TMA: a) gibbsite-like fully hydroxylated surface $(25\\mu \\mathrm{mol}\\mathrm{m}^{-2}$ of OH), and b) partially hydroxylated surface $(16\\mu \\mathrm{mol}\\mathrm{m}^{-2})$ that is more representative of ALD conditions and features both higher and lower OH groups. Ball-and-stick representation: violet $= \\mathsf{Al}$ red $= \\mathsf{O}$ white $= \\mathsf{H}$","id":"test/atomic-layer-deposition/simulation-usecase/47/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/47/figure_1","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":45,"y":5,"width":825,"height":203},{"panel_id":"b","x":37,"y":251,"width":834,"height":322}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/Simon D. Elliott et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":875,"height":575,"image_format":"jpeg","image_sha256":"db2f1f56be711e18c80ae3c166f6276d23a8e8e0473085eed0dc7729d4bb0508","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_47_figure_10.jpg","caption":"Figure 10. Schematic representations of four levels of atomistic simulation of ALD mechanism: a) reactivity of model molecules, b) reactive adsorption of individual precursors on a model surface, c) multiple adsorbates on a complex substrate, d) morphology of the growing film.","id":"test/atomic-layer-deposition/simulation-usecase/47/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/47/figure_10","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"conceptual diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":37,"y":10,"width":477,"height":294},{"panel_id":"b","x":597,"y":10,"width":513,"height":289},{"panel_id":"c","x":39,"y":321,"width":513,"height":312},{"panel_id":"d","x":600,"y":315,"width":563,"height":312}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/Simon D. Elliott et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1166,"height":636,"image_format":"jpeg","image_sha256":"bb7682aed49adc5f6fd5e66e4dbf4861c708b07f265bef866437dac07db0d303","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_47_figure_2.jpg","caption":"Figure 2. Cooperative effect in metal oxide ALD. The presence of a remaining fragment (pink atoms) in the neighborhood of the ligand creates a highly facilitative environment for proton transfer from the surface oxygen to the ligand. The pink fragment does not participate directly in proton transfer but does increase the coordination number of the central surface oxygen. The activation energy computed for proton transfer is thus lower when the pink fragment is present (pink text, eV) than when it is absent (black text, eV). a) $A1_{2}O_{3}$ from TMA $+H_{2}O_{i}$ b) $HfO_{2}$ from $\\mathsf{Hf(NMe_2)_4 + H_2O}$ $\\mathbf{red} = \\mathbb{O}$ blue $= \\mathbb{N}$ white $= \\mathbb{H}$ large gray $= \\mathbb{A}1$ or Hf, and small gray $= \\mathbb{C}$ Reproduced with permission.[22] Copyright 2015, Royal Society of Chemistry.","id":"test/atomic-layer-deposition/simulation-usecase/47/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/47/figure_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":7,"y":58,"width":418,"height":345},{"panel_id":"b","x":442,"y":4,"width":417,"height":395}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/Simon D. Elliott et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":861,"height":405,"image_format":"jpeg","image_sha256":"35ad5296541c8f0c0aec386ff7607e537148b6b44ff4c8bb49d66175802edf6c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_47_figure_6.jpg","caption":"Figure 6. Molecular layer deposition. The proposed structure and interchain interaction of a PDI/BDO polyurethane polymer on silicon wafer and glass. A) Hydrogen bonding between the H atom on N and the O atom in the C = O unit. B) The horizontal orientation of the N-H, C-H, C = O, and C-O bonds. Reproduced with permission.[98] Copyright 2003, American Association for the Advancement of Science.","id":"test/atomic-layer-deposition/simulation-usecase/47/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/47/figure_6","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":14,"y":5,"width":327,"height":343},{"panel_id":"b","x":355,"y":6,"width":296,"height":339}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/Simon D. Elliott et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":653,"height":348,"image_format":"jpeg","image_sha256":"9ca4890916b7ebcfc9a45fd142b4675f6d1f94b87df0bc009c4608ba33311ab3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_47_figure_7.jpg","caption":"Figure 7. Molecular layer deposition. Optimized geometry of the product of a hydrolyzed 3-amino-propyltriethoxysilane (APTES) chain that has reacted with PDIC and subsequently ED. Reproduced with permission.[99] Copyright 2010, American Chemical Society.","id":"test/atomic-layer-deposition/simulation-usecase/47/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/47/figure_7","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":605,"height":450}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/Simon D. Elliott et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":605,"height":450,"image_format":"jpeg","image_sha256":"ec029a0a667d6263eefcdf861ef5ac998ed8e89425b88b4d3a58856c4ee3d415","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_51_fig_1.jpg","caption":"Fig. 1 The optimized initial, transition, and final structures of the dissociative chemisorption step for (a) $\\mathsf{H}_{2}$ and (b) $\\mathbb{N}_2$ on the TiN (001) surface.","id":"test/atomic-layer-deposition/simulation-usecase/51/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/51/fig_1","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Optimized structures for H₂ dissociative chemisorption on the TiN (001) surface, showing H₂ adsorption, H–H bond dissociation, and bonding of H atoms preferentially to Ti sites.\"},{\"panel_id\":\"b\",\"text\":\"Optimized structures for N₂ dissociative chemisorption on the TiN (001) surface, showing adsorption, N≡N bond breaking, and structural evolution along the dissociation pathway.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Description|\\n|-----------|\\n|Optimized initial state (IS), transition state (TS), and final state (FS) structures showing H–H bond dissociation and adsorption of H atoms on Ti sites of the TiN (001) surface.|\"},{\"panel_id\":\"b\",\"text\":\"|Description|\\n|-----------|\\n|Optimized initial state (IS), transition state (TS), and final state (FS) structures illustrating N–N bond dissociation on the TiN (001) surface.|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding dissociative chemisorption on TiN (001) is important because it reveals how small molecules activate and interact with reactive surface sites. This knowledge is essential for predicting surface reactivity, catalytic behavior, and material performance in applications such as catalysis, surface coatings, and high-temperature or reactive environments where TiN is commonly used.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dissociated H atoms preferentially bind to titanium sites, with a binding energy approximately 0.42 eV higher than on nitrogen sites.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Initial state (molecular adsorption), Transition state (bond stretching and dissociation), Final state (adsorbed dissociated atoms on the surface)\"}]}]","bbox":[{"panel_id":"a","x":42,"y":8,"width":873,"height":372},{"panel_id":"b","x":55,"y":424,"width":863,"height":274}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":923,"height":700,"image_format":"jpeg","image_sha256":"e5a9176d8f543fea38ca96a896772c33036a33d488cd1950d7665090575d83c3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_51_fig_2.jpg","caption":"Fig. 2 The optimized initial, transition, and final structures of the dissociative chemisorption step for (a) $\\mathsf{H}_{2}$ and (b) $\\mathsf{N}_{2}$ on the Ti-terminated TiN (111) surface.","id":"test/atomic-layer-deposition/simulation-usecase/51/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/51/fig_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Optimized structures for H₂ dissociative chemisorption on the Ti-terminated TiN (111) surface, showing H₂ adsorption, H–H bond dissociation, and adsorption of H atoms at three-fold hollow sites formed by Ti atoms.\"},{\"panel_id\":\"b\",\"text\":\"Optimized structures for N₂ dissociative chemisorption on the Ti-terminated TiN (111) surface, showing adsorption, N≡N bond dissociation, and N atoms occupying the same three-fold hollow Ti sites. The figure highlights the high reactivity of the Ti-terminated (111) surface compared to TiN (001).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Description|\\n|-----------|\\n|Optimized initial state (IS), transition state (TS), and final state (FS) structures showing H–H bond dissociation and adsorption of H atoms at the three-fold hollow Ti site on the Ti-terminated TiN (111) surface.|\"},{\"panel_id\":\"b\",\"text\":\"|Description|\\n|-----------|\\n|Optimized initial state (IS), transition state (TS), and final state (FS) structures illustrating N–N bond dissociation and adsorption of N atoms at the three-fold hollow Ti site on the Ti-terminated TiN (111) surface.|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Ti-terminated TiN (111) surface has more dangling bonds per Ti atom compared to TiN (001), which increases surface reactivity. This facilitates H–H and N–N bond dissociation with lower activation energies and higher adsorption energies, making dissociative chemisorption energetically favorable. Understanding this surface reactivity is important for predicting catalytic behavior and designing materials for surface reactions.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dissociation of both H₂ and N₂ is more facile on Ti-terminated TiN (111) due to smaller activation energies (0.11 eV for H₂, 0.92 eV for N₂) compared to TiN (001).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Initial state (IS) – molecular adsorption, Transition state (TS) – bond stretching/dissociation, Final state (FS) – dissociated H or N atoms adsorbed, Adsorption site – three-fold hollow site formed by Ti atoms\"}]}]","bbox":[{"panel_id":"a","x":54,"y":4,"width":868,"height":333},{"panel_id":"b","x":54,"y":370,"width":871,"height":204}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":928,"height":578,"image_format":"jpeg","image_sha256":"5f67c0583e1a90353082f96fea3dcf1d256e512da16516bb05c492b67ead540f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_51_fig_3.jpg","caption":"Fig. 3 The optimized initial, transition, and final structures of the dissociative chemisorption step for (a) $\\mathsf{H}_{2}$ and (b) $\\mathsf{N}_{2}$ on the N-terminated TiN (111) surface.","id":"test/atomic-layer-deposition/simulation-usecase/51/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/51/fig_3","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Optimized structures for H₂ dissociative chemisorption on the N-terminated TiN (111) surface, showing H₂ adsorption, H–H bond dissociation, and adsorption of H atoms at three-fold hollow N sites. The reaction is exothermic with a low energy barrier.\"},{\"panel_id\":\"b\",\"text\":\"Optimized structures for N₂ adsorption on the N-terminated TiN (111) surface, showing that N₂ does not dissociate due to an endothermic reaction and high activation energy.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Description|\\n|-----------|\\n|Optimized initial state (IS), transition state (TS), and final state (FS) structures showing H–H bond dissociation and adsorption of H atoms at the three-fold hollow site formed by N atoms. The reaction is exothermic (ΔE ≈ -4.66 eV) with a low activation energy of 0.26 eV.|\"},{\"panel_id\":\"b\",\"text\":\"|Description|\\n|-----------|\\n|Optimized initial state (IS), transition state (TS), and final state (FS) structures illustrating that N₂ is not dissociated on the N-terminated TiN (111) surface. The reaction is endothermic (ΔE ≈ 1.24 eV) with a high activation energy of 1.45 eV, indicating that N–N bond breaking is unfavorable on this surface.|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The N-terminated TiN (111) surface has a high binding energy for H atoms (Eb = 5.73 eV) and a low activation energy for H–H bond breaking, making H₂ dissociation energetically favorable. In contrast, N₂ has a higher bond dissociation energy and the surface does not provide sufficient stabilization for N atoms, resulting in an endothermic reaction with a high activation barrier, so N₂ remains intact. This difference highlights the surface’s selective reactivity toward small molecules.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"H₂ dissociation is exothermic with a low activation energy (ΔE ≈ -4.66 eV, Ea = 0.26 eV), whereas N₂ dissociation is endothermic with a high activation energy (ΔE ≈ 1.24 eV, Ea = 1.45 eV) and does not occur.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Initial state (IS) – molecular adsorption, Transition state (TS) – bond stretching/dissociation, Final state (FS) – H atoms adsorbed at three-fold hollow N sites, N₂ remains undissociated\"}]}]","bbox":[{"panel_id":"a","x":51,"y":12,"width":838,"height":322},{"panel_id":"b","x":48,"y":360,"width":841,"height":212}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":892,"height":572,"image_format":"jpeg","image_sha256":"10e2dc4d86a79337b456f4266b666bda3c17cc45720388bda02dd5aaa82cba1a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_51_fig_5.jpg","caption":"Fig. 5 Dissociative chemisorption of $\\mathsf{B}_2\\mathsf{H}_6$ on the H-covered Ti-terminated TiN (111) surface: (a) the first reaction step (b) the second reaction step.","id":"test/atomic-layer-deposition/simulation-usecase/51/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/51/fig_5","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"First step of B₂H₆ dissociative chemisorption on the H-covered Ti-terminated TiN (111) surface, showing H atoms from B₂H₆ reacting with surface H atoms to form H₂ that desorbs, leaving B₂H₅ bound to a hollow site.\"},{\"panel_id\":\"b\",\"text\":\"Second step of B₂H₆ dissociative chemisorption, showing further decomposition of B₂H₅ and stabilization of B fragments on the surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Description|\\n|-----------|\\n| The H atoms of B₂H₆ interact with the pre-adsorbed H atoms on the H-covered Ti-terminated TiN (111) surface, forming H₂ that desorbs. The remaining B₂H₅ fragment binds to the surface at the hollow site formed by three Ti atoms (Site 4). |\"},{\"panel_id\":\"b\",\"text\":\"|Description|\\n|-----------|\\n| The subsequent reaction of B₂H₅ on the surface continues the decomposition mechanism, with further H removal and stabilization of B fragments on the Ti hollow sites. This completes the dissociative chemisorption pathway of B₂H₆ on the H-covered surface. |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The H-covered Ti-terminated TiN (111) surface has pre-adsorbed H atoms, which facilitate H₂ formation and desorption during B₂H₆ decomposition. The surface provides stable hollow sites for the adsorption and stabilization of B fragments, ensuring an energetically favorable pathway for the dissociative chemisorption of B₂H₆. This makes the surface effective for controlled decomposition reactions.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In the first step, H₂ desorbs and B₂H₅ binds to the surface. In the second step, further decomposition of B₂H₅ occurs, with stabilization of B fragments on the surface.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, During the first reaction step, H atoms from B₂H₆ react with surface H atoms to form H₂, which desorbs from the surface.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Adsorption site: three-fold hollow site formed by Ti atoms (Site 4), First reaction step: B₂H₅ fragment, H₂ desorption, Second reaction step: further B decomposition, stabilized B fragments\"}]}]","bbox":[{"panel_id":"a","x":4,"y":4,"width":877,"height":363},{"panel_id":"b","x":6,"y":410,"width":872,"height":292}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":883,"height":703,"image_format":"jpeg","image_sha256":"efa615690d2273857bf8dc87966c18d9ff2dffa2c1991771eb576a3df198a1a6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_51_fig_7.jpg","caption":"Fig. 7 Dissociative chemisorption of $\\mathsf{B}_2\\mathsf{H}_6$ on the H-covered Ti-terminated TiN (111) surface: (a) the first reaction step (b) the second reaction step.","id":"test/atomic-layer-deposition/simulation-usecase/51/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/51/fig_7","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"First step of B₂H₆ dissociative chemisorption on the H-covered Ti-terminated TiN (111) surface, showing H atoms from B₂H₆ reacting with surface H atoms to form H₂ that desorbs, leaving B₂H₅ adsorbed. This step is exothermic.\"},{\"panel_id\":\"b\",\"text\":\"Second step of B₂H₆ dissociative chemisorption, showing a H atom from B₂H₅ reacting with a surface H atom to form H₂, further decomposing the adsorbed fragment. This step is nearly thermoneutral. Activation and reaction energies are provided for both steps.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | Activation Energy Ea (eV) | Reaction Energy Erxn (eV) | Description |\\n| --- | --- | --- | --- |\\n| 1st step | 0.87 | -0.38 | H atoms of B₂H₆ react with H atoms on the H-covered Ti-terminated TiN (111) surface; H₂ desorbs; B₂H₅ fragment binds to hollow site on the surface |\"},{\"panel_id\":\"b\",\"text\":\"| Reaction Step | Activation Energy Ea (eV) | Reaction Energy Erxn (eV) | Description |\\n| --- | --- | --- | --- |\\n| 2nd step | 1.07 | 0.04 | H atom of B₂H₅ reacts with H atom on surface; H₂ desorbs; further decomposition of B₂H₅ occurs |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Surface H atoms on the Ti-terminated TiN (111) surface interact directly with incoming B₂H₆ molecules, enabling controlled dissociation via H₂ desorption. This passivation ensures that decomposition occurs in defined steps, moderating reaction energetics and preventing uncontrolled B₂H₆ adsorption. Such stepwise control is crucial for atomic layer deposition processes where precise surface reactions determine film quality and uniformity.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first step has an activation energy of 0.87 eV, while the second step has a slightly higher activation energy of 1.07 eV.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The figure illustrates the first two reaction steps. Full decomposition may require additional steps beyond those shown.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Step 1: Erxn = -0.38 eV; H₂ desorption; B₂H₅ adsorbed on hollow site, Step 2: Erxn = 0.04 eV; H₂ desorption; further decomposition of B₂H₅ fragment\"}]}]","bbox":[{"panel_id":"a","x":3,"y":1,"width":652,"height":314},{"panel_id":"b","x":2,"y":334,"width":651,"height":209}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":658,"height":547,"image_format":"jpeg","image_sha256":"1d0ccabe2b94c75f0ef6a078051552a9238b29d7cf5fd108da6cfc4fc852aba3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_1.jpg","caption":"Figure 1. Optimized geometry for adsorption of $\\mathrm{HfX_4}$ molecule onto OH terminated $\\mathrm{HfO_2}$ . Terminal hydroxyl group (a), terminal oxygen (b), and bridging oxygen (c) are highlighted. The $\\mathrm{HfX_4}$ is anchored to a terminal oxygen (red = O, blue = N, white = H, large gray = Hf, small gray = C).","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_1","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure presents DFT-optimized geometries that illustrate how an HfX₄ precursor adsorbs on different oxygen sites of an OH-terminated HfO₂ surface. Three distinct adsorption configurations are shown: attachment to a terminal hydroxyl group (a), a terminal oxygen (b), and a bridging oxygen (c). The atomic species and bonding environment are explicitly visualized to reveal the preferred anchoring mode of the Hf precursor.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Studying the adsorption geometries on different oxygen sites helps determine how the HfX₄ precursor interacts with the surface, which influences reaction pathways and growth mechanisms in ALD. Each site—terminal OH, terminal O, and bridging O—offers distinct bonding environments that affect precursor activation, ligand exchange, and subsequent film formation. By comparing these configurations, researchers can identify the most favorable anchoring site and optimize surface chemistry for improved deposition efficiency and film quality.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A terminal oxygen atom.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Terminal hydroxyl group (a), Terminal oxygen (b), Bridging oxygen (c)\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":487,"height":436}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":487,"height":436,"image_format":"jpeg","image_sha256":"5a5f62d0c9dae445a886f75287eff77d0e7a31a78f98de63ba2a953136e11575","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_10.jpg","caption":"Figure 10. $\\mathrm{H}_2\\mathrm{O}$ molecule is not dissociated when there are not enough Lewis acid and base sites in terms of number; snapshots are from optimization.","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_10","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"the water molecule remains intact rather than dissociating, indicating that the surface lacks the required reactive sites to promote proton transfer or bond cleavage.\"},{\"panel_id\":\"b\",\"text\":\"the water molecule remains intact rather than dissociating, indicating that the surface lacks the required reactive sites to promote proton transfer or bond cleavage.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding water dissociation is critical because surface –OH formation and ligand removal govern the efficiency and uniformity of ALD growth. If water cannot dissociate, ligand elimination becomes incomplete, potentially leading to reduced surface reactivity, slower growth-per-cycle, and incorporation of undesired species. This directly affects film quality, density, and interface stability in high-κ applications.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In (a), H₂O remains adsorbed closer to the surface, while in (b) it is positioned slightly farther away, but in both cases the molecule stays intact.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the H₂O molecule does not dissociate on the surface under these conditions.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Lack of sufficient Lewis acid sites, Lack of sufficient Lewis base sites, Reduced ability of the surface to promote proton transfer\"}]}]","bbox":[{"panel_id":"a","x":16,"y":31,"width":454,"height":418},{"panel_id":"b","x":495,"y":37,"width":459,"height":415}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":959,"height":455,"image_format":"jpeg","image_sha256":"d92ebb4f437b873d717d4153895fd32b0e98e23eebf3e12c87e58577604ca8ae","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_11.jpg","caption":"Figure 11. (a) Cluster of four HfX. (b) The upper-most oxygen originally adsorbed as $\\mathrm{H}_2\\mathrm{O}$ where red circles show typical OH and H from $\\mathrm{H}_2\\mathrm{O}$ dissociation. (c) Dissociation of HX from six coordinated Hf during the water pulse.","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_11","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_11","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows a cluster of four HfX precursors bonded to the hydroxylated HfO₂ surface.\"},{\"panel_id\":\"b\",\"text\":\"depicts the dissociation of an adsorbed H₂O molecule into OH and H fragments, highlighted by red circles, as coordination environments change.\"},{\"panel_id\":\"c\",\"text\":\"shows the subsequent dissociation of HfX from a six-coordinated Hf site (6 c.n.) and a five-coordinated Hf site (5 c.n.) during the water pulse.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reaction sequence in Figure provides key insights into the surface chemistry governing the PEALD growth of HfO₂. The initial arrangement of HfX precursors demonstrates how precursor clustering occurs before the water pulse. The dissociation of water into OH and H fragments highlights the activation of surface sites, which is essential for ligand removal and film densification. Finally, the detachment of HfX from different coordination environments illustrates how ligand elimination proceeds, enabling the formation of a stable oxide network. Together, these snapshots reveal the detailed mechanistic steps that drive the self-limiting ALD reaction, ultimately influencing film uniformity, density, and purity.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Panel (b) highlights a six-coordinated site (6 c.n.), whereas panel (c) highlights a five-coordinated site (5 c.n.).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the figure shows the dissociation of an H₂O molecule forming OH and H species on the HfO₂ surface.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Cluster of four HfX precursors adsorbed on the surface (panel a), Dissociation of adsorbed H₂O into OH and H fragments (panel b), Release/detachment of HfX from 6-coordinated and 5-coordinated Hf sites (panel c)\"}]}]","bbox":[{"panel_id":"a","x":14,"y":35,"width":262,"height":233},{"panel_id":"b","x":302,"y":25,"width":253,"height":245},{"panel_id":"c","x":573,"y":28,"width":267,"height":241}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":844,"height":272,"image_format":"jpeg","image_sha256":"5b4061979fc7a3d6be7e7f02ee2f1a5cdcf45dabd4be5d357c88ae87ea773658","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_12.jpg","caption":"Figure 12. Dissociation of HX from seven coordinated hafnium during water pulse. Four oxygen (originally desorbed as $\\mathrm{H}_2\\mathrm{O}$ ) are coordinated to the cluster, and dissociation of HX from the resulting seven-coordinate Hf is more favorable than the situation in Figure 11.","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_12","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"the Hf center initially maintains seven oxygen-based ligands.\"},{\"panel_id\":\"b\",\"text\":\"dissociation proceeds to form a six-coordinate Hf species. The highlighted coordination numbers illustrate how water-derived oxygen ligands stabilize the cluster and promote HX release.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The coordination environment of hafnium plays a critical role in determining the reactivity of surface species during the water pulse. In the seven-coordinated configuration, the presence of multiple oxygen ligands—derived from previously adsorbed water molecules—creates a more reactive environment that facilitates proton transfer and promotes HX dissociation. As the system transitions to a six-coordinated Hf, the reduced ligand density reflects successful removal of HX and progression of the reaction cycle. This coordination-driven reactivity directly impacts film growth efficiency, surface regeneration, and the overall self-limiting nature of the PEALD process.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Panel (a) shows a seven-coordinated Hf center, while panel (b) shows a six-coordinated Hf center after HX dissociation.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Presence of four oxygen atoms originally adsorbed as H₂O, Higher coordination stabilizing the intermediate, Increased availability of labile ligands for proton transfer, Reduced structural strain supporting HX elimination\"}]}]","bbox":[{"panel_id":"a","x":16,"y":64,"width":457,"height":389},{"panel_id":"b","x":501,"y":72,"width":442,"height":380}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":948,"height":455,"image_format":"jpeg","image_sha256":"9f5a93ce6e1f9b161d5cfd3108f596946545a00790b2d94ac8ec8efa96af1eb0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_2.jpg","caption":"Figure 2. Rotation of protonated ligand from $\\mathrm{Hf(H_{up}X)(H_{up}X)(H_{up}X)}$ to $\\mathrm{Hf(H_{up}X)(H_{up}X)(H_{up}X)X,X = N(CH_{2})_{2}}$ where the \"dn\" (a) and \"up\" (c) show the orientation of the proton on nitrogen relative to the surface. The saddle point is indicated in (b).","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows the ligand in the “down” orientation and illustrates the rotational mechanism of a protonated ligand around a hafnium center on the HfO₂ surface\"},{\"panel_id\":\"b\",\"text\":\"captures the transition-state saddle point during rotation\"},{\"panel_id\":\"c\",\"text\":\"shows the ligand adopting the “up” orientation. These snapshots highlight how proton orientation on nitrogen changes relative to the surface during rotation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding the rotation of protonated ligands around surface-bound hafnium atoms is crucial because such motions directly influence the accessibility of reactive sites and the progression of surface reactions during ALD and PEALD processes. Proton orientation affects hydrogen bonding, ligand stability, and the likelihood of ligand exchange or elimination reactions, all of which determine growth-per-cycle, film uniformity, and the formation of by-products. Therefore, visualizing transition states and orientation changes helps clarify the mechanistic pathways that control thin-film deposition behavior at the atomic level.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The transition-state saddle point appears in panel (b).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"a Ligand positioned in the “down” orientation with proton directed toward the surface, b Ligand reaches a saddle point where the proton orientation and ligand geometry begin to shift, c Ligand completes rotation, adopting the “up” orientation with the proton facing away from the surface.\"}]}]","bbox":[{"panel_id":"a","x":8,"y":10,"width":274,"height":253},{"panel_id":"b","x":291,"y":6,"width":273,"height":255},{"panel_id":"c","x":572,"y":11,"width":273,"height":251}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":847,"height":264,"image_format":"jpeg","image_sha256":"a735c9ad8eb0cd3a2183614f6732a29ea22583f825c1a0eadd2f0a9921c5c948","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_3.jpg","caption":"Figure 3. Highlighted proton diffuses from nitrogen to the topmost nitrogen. The saddle point is indicated in the middle snapshot (b).","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_3","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows the initial proton position and diffusion of a proton between nitrogen atoms on a surface-bound ligand.\"},{\"panel_id\":\"b\",\"text\":\"highlights the saddle point along the migration pathway\"},{\"panel_id\":\"c\",\"text\":\"depicts the final proton-shifted configuration. These snapshots represent key stages in the proton transfer mechanism obtained from structural optimization.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding proton diffusion is essential because it directly influences the stability, reactivity, and ligand dynamics of surface-bound Hf complexes during deposition or surface reactions. Proton transfer affects surface coordination states, determines the energetics of reaction pathways, and impacts the overall mechanism of film growth in processes such as ALD/PEALD. Insight into saddle points and final proton configurations helps predict reaction barriers and optimize processing conditions.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Panel b shows the proton at the saddle point.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The figure shows sequential snapshots (a → b → c) representing the stages of proton transfer.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Change in N–H bonding position, Shift in proton orientation relative to the surface, Identification of a saddle point where bond rearrangement is underway\"}]}]","bbox":[{"panel_id":"a","x":12,"y":20,"width":269,"height":259},{"panel_id":"b","x":296,"y":8,"width":266,"height":271},{"panel_id":"c","x":577,"y":16,"width":265,"height":260}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":847,"height":280,"image_format":"jpeg","image_sha256":"85fd8ee167ce4ddd6086df18a26c26cc6122a591120498c388ac83dbcc13660b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_4.jpg","caption":"Figure 4. $\\mathrm{Hf(H_{up}X)(H_{dn}X)(H_{dn}X)(H_{dn}X)}$ precursor at the surface. Because of multiple proton diffusion, the topmost bond between $\\mathrm{Hf - N}$ is stretched. Red circles show the diffused protons from the surface to the nitrogen.","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_4","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"the figure illustrates the adsorption of the Hf(H_upX)(H_dnX)(H_dnX)(H_dnX) precursor on an OH-terminated HfO₂ surface, highlighting multiple proton-diffusion events from the substrate to the precursor ligands. Red circles mark the locations of diffused protons, showing how proton transfer stretches the topmost Hf–N bond and alters precursor binding geometry.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Proton diffusion plays a critical role in modifying precursor binding and reaction pathways during ALD processes. As shown in the figure, multiple protons migrate from the HfO₂ surface to the precursor’s nitrogen atoms, weakening and stretching the Hf–N bond. This protonation alters the precursor’s coordination environment, potentially enhancing ligand removal, facilitating precursor decomposition, and improving film growth uniformity. Understanding this proton-mediated reactivity helps optimize precursor design and pulse conditions for controlled surface reactions in plasma-enhanced ALD.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The topmost Hf–N bond i s stretched as a result of proton diffusion to the precursor.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the red circles indicate protons that have diffused from the surface to the nitrogen atoms of the precursor.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Diffused protons originating from the HfO₂ surface, Protonated sites on the precursor ligands, Interaction points between surface oxygen and precursor nitrogen atoms\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":670,"height":561}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":670,"height":561,"image_format":"jpeg","image_sha256":"5aeb0cce8c40c1ed628b6287c25fa8ac752527c4ad0a36a1102612c5b6b633b8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_5.jpg","caption":"Figure 5. $\\mathrm{Hf(H_{up}X)(H_{up}X)(H_{dn}X)X}$ precursor at the hafnium oxide surface. The topmost HX is dissociating from hafnium during ab initio MD calculation. Red circles show the diffused protons from surface to the ligands.","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_5","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"this figure shows the Hf(H_upX)(H_upX)(H_dnX)(H_dnX) precursor interacting with a hafnium oxide surface during an ab initio MD simulation. The topmost ligand is dissociating from the hafnium center, while multiple protons diffuse from the surface to the precursor ligands. The red circles highlight these diffused protons and indicate active sites where proton transfer is altering the coordination environment of the precursor.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Proton diffusion significantly affects ligand stability and precursor reactivity during ALD processes. As protons migrate from the hafnium oxide surface to the precursor ligands, they weaken the Hf–N bonds and facilitate the dissociation of the topmost HX ligand. This proton-driven activation enhances ligand removal and helps drive surface reactions toward film formation. Understanding these proton transfer events is crucial for optimizing precursor design, improving plasma-assisted ALD efficiency, and achieving better control over surface chemistry and film quality.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The red circles indicate protons diffusing from the hafnium oxide surface to the precursor ligands.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the figure shows the topmost HX ligand dissociating from the hafnium atom during ab initio MD simulation.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Diffused protons transferred from the surface, The dissociating HX ligand, The hafnium center with multiple coordinated ligands, Protonation sites on nitrogen atoms of the precursor\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":636}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":675,"height":636,"image_format":"jpeg","image_sha256":"b70fda6b65f66db1e084db46c97e59d5a7036eb941016e73438da6c38b1f94b1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_6.jpg","caption":"Figure 6. Snapshots from optimization of $\\mathrm{Hf(H_{up}X)(H_{up}X)(H_{up}X)(H_{up}X)}$ configuration. Hf moves down into the surface and becomes strongly attached to a total of four O atoms in the surface as 2HX desorbs.","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_6","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"showing the evolution of the Hf(H_upX)(H_upX)(H_dnX)(H_upX) precursor on the HfO₂ surface. As the precursor relaxes during optimization, the Hf atom progressively moves deeper into the surface and forms stronger bonding interactions with up to four surface oxygen atoms. Meanwhile, two HX ligands desorb, demonstrating how surface coordination drives ligand elimination and stabilizes the adsorbed configuration.\"},{\"panel_id\":\"b\",\"text\":\"showing the evolution of the Hf(H_upX)(H_upX)(H_dnX)(H_upX) precursor on the HfO₂ surface. As the precursor relaxes during optimization, the Hf atom progressively moves deeper into the surface and forms stronger bonding interactions with up to four surface oxygen atoms. Meanwhile, two HX ligands desorb, demonstrating how surface coordination drives ligand elimination and stabilizes the adsorbed configuration.\"},{\"panel_id\":\"c\",\"text\":\"showing the evolution of the Hf(H_upX)(H_upX)(H_dnX)(H_upX) precursor on the HfO₂ surface. As the precursor relaxes during optimization, the Hf atom progressively moves deeper into the surface and forms stronger bonding interactions with up to four surface oxygen atoms. Meanwhile, two HX ligands desorb, demonstrating how surface coordination drives ligand elimination and stabilizes the adsorbed configuration.\"},{\"panel_id\":\"d\",\"text\":\"showing the evolution of the Hf(H_upX)(H_upX)(H_dnX)(H_upX) precursor on the HfO₂ surface. As the precursor relaxes during optimization, the Hf atom progressively moves deeper into the surface and forms stronger bonding interactions with up to four surface oxygen atoms. Meanwhile, two HX ligands desorb, demonstrating how surface coordination drives ligand elimination and stabilizes the adsorbed configuration.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding the structural progression from (a) to (d) reveals how the Hf precursor interacts with and binds to the HfO₂ surface during ALD. The increasing Hf–O coordination and ligand detachment indicate the key chemical steps responsible for film nucleation. This provides valuable insight into precursor efficiency, ligand removal mechanisms, and how the surface chemistry affects overall ALD growth performance.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Configuration (d) shows the strongest binding interaction.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Gradual downward movement of the Hf atom, Increased coordination with surface oxygen atoms, Progressive detachment of HX ligands, Formation of a more stable surface-anchored configuration\"}]}]","bbox":[{"panel_id":"a","x":11,"y":5,"width":460,"height":446},{"panel_id":"b","x":494,"y":5,"width":461,"height":448},{"panel_id":"c","x":11,"y":473,"width":460,"height":435},{"panel_id":"d","x":499,"y":470,"width":457,"height":435}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":961,"height":934,"image_format":"jpeg","image_sha256":"f403e4c8e53627cbf91e0f58f8fa877bbc4f12d728fe7535535a07663bb60216","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_7.jpg","caption":"Figure 7. By densification, the c.n. of Hf in the precursor is increased as $\\mathrm{HfX}_2$ becomes strongly attached to three oxygen atoms at the surface. Snapshots are from ab initio MD at $T = 500\\mathrm{K}$ for $0.4\\mathrm{ps}$","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_7","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Hf initially bonds to only three oxygen atoms (3 c.n.). As the simulation progresses through\"},{\"panel_id\":\"b\",\"text\":\"the precursor moves deeper into the surface environment.\"},{\"panel_id\":\"c\",\"text\":\"the precursor moves deeper into the surface environment.\"},{\"panel_id\":\"d\",\"text\":\"the coordination number increases to five (5 c.n.), indicating that the precursor becomes strongly anchored to the HfO₂ surface under MD conditions at 500 K.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the Hf coordination number enhances the precursor’s anchoring strength to the oxide surface, promoting better surface saturation and improved densification during MD conditions. As a result, the resulting HfO₂ film becomes denser, more uniform, and structurally more stable, which improves its performance as a high-k dielectric. This stronger bonding also reduces defect sites, ultimately contributing to higher-quality thin films in ALD/PEALD applications.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"(a), Hf shows 3-fold coordination, while in (d), it increases to 5-fold coordination.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hf moves deeper toward the oxide surface, Additional Hf–O bonds are formed, Ligand orientation shifts to allow stronger attachment, Surface oxygen atoms become more engaged with the precursor.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":23,"width":459,"height":411},{"panel_id":"b","x":491,"y":46,"width":451,"height":390},{"panel_id":"c","x":12,"y":496,"width":445,"height":407},{"panel_id":"d","x":508,"y":519,"width":432,"height":380}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":950,"height":909,"image_format":"jpeg","image_sha256":"96ea7860cf0202f62af64223f160837845d37f162e4f4c6477ddebee2f27d986","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_8.jpg","caption":"Figure 8. Optimized $\\mathrm{Hf(H_2X)(H_{up}X)}$ attached to three oxygen atoms at the surface where the \"dn\" and \"up\" show the orientation of the proton on nitrogen relative to the surface.","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_8","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"the figure shows the optimized configuration of a Hf(H_dnX)(H_upX) precursor bonded to three surface oxygen atoms on HfO₂. The labeled “up” and “dn” positions indicate the two possible orientations of the proton on the nitrogen atom relative to the surface, illustrating how proton directionality affects precursor–surface interaction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding proton orientation provides insight into how ligands interact with surface oxygens during precursor adsorption. The “up” and “dn” proton positions can influence ligand stability, reaction pathways, and the likelihood of proton transfer or ligand dissociation. This knowledge helps optimize precursor design for improved reactivity, lower activation barriers, and better control over film uniformity in ALD processes. Ultimately, such insights contribute to more efficient deposition cycles and higher-quality oxide films.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They indicate the two possible orientations of the proton on the nitrogen atom—either pointing upward (“up”) or downward (“dn”) relative to the surface.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Proton orientation on the nitrogen atom (“up” vs. “dn”), Number of oxygen atoms coordinated to Hf (three oxygen atoms), Local surface geometry and available binding sites, Hydrogen diffusion and bonding environment around nitrogen\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":470,"height":403}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":470,"height":403,"image_format":"jpeg","image_sha256":"4f21c2a0c4fd66309975a334c82328fda9765e5f27a1612a99762edb8dbd641c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_7_figure_9.jpg","caption":"Figure 9. Amide group of the densified $\\mathrm{HfX}_2$ was transferred to under-coordinated hafnium at the surface; snapshots are from ab initio MD calculation, starting at $T = 500\\mathrm{K}$ and running for $0.4\\mathrm{ps}$ .","id":"test/atomic-layer-deposition/simulation-usecase/7/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/7/figure_9","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows four ab initio MD illustrating the transfer of the amide group of the densified HfX₂ precursor to an under-coordinated hafnium atom at the HfO₂ surface. The panels capture the dynamic progression of ligand rearrangement and bonding as the system evolves at 500 K over 0.4 ps. These configurations highlight surface–ligand interactions central to precursor behavior.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows four ab initio MD illustrating the transfer of the amide group of the densified HfX₂ precursor to an under-coordinated hafnium atom at the HfO₂ surface. The panels capture the dynamic progression of ligand rearrangement and bonding as the system evolves at 500 K over 0.4 ps. These configurations highlight surface–ligand interactions central to precursor behavior.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows four ab initio MD illustrating the transfer of the amide group of the densified HfX₂ precursor to an under-coordinated hafnium atom at the HfO₂ surface. The panels capture the dynamic progression of ligand rearrangement and bonding as the system evolves at 500 K over 0.4 ps. These configurations highlight surface–ligand interactions central to precursor behavior.\"},{\"panel_id\":\"d\",\"text\":\"The figure shows four ab initio MD illustrating the transfer of the amide group of the densified HfX₂ precursor to an under-coordinated hafnium atom at the HfO₂ surface. The panels capture the dynamic progression of ligand rearrangement and bonding as the system evolves at 500 K over 0.4 ps. These configurations highlight surface–ligand interactions central to precursor behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding the amide transfer mechanism is crucial because it reveals how precursor ligands interact with under-coordinated metal atoms on oxide surfaces during growth. This directly influences film quality, ligand removal efficiency, and surface reactivity, all of which are key parameters in ALD and PEALD. The snapshots in Figure demonstrate the dynamic behavior of the precursor under realistic thermal conditions, showing how ligands detach, reorganize, and attach to surface sites. Such mechanistic insight helps in designing more efficient precursors with improved volatility, reactivity, and cleanliness of by-products, ultimately enabling better control over film uniformity and composition.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Panel (a) represents the initial configuration, while panel (d) shows the advanced stage where the amide group is coordinated to the under-coordinated Hf.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Partial detachment of the amide group from the precursor, Increasing interaction between the amide nitrogen and under-coordinated surface Hf, Reorganization of coordination bonds around the surface Hf atom, Gradual stabilization of the ligand in the final configuration.\"}]}]","bbox":[{"panel_id":"a","x":15,"y":5,"width":461,"height":440},{"panel_id":"b","x":510,"y":31,"width":440,"height":409},{"panel_id":"c","x":20,"y":508,"width":458,"height":417},{"panel_id":"d","x":513,"y":511,"width":446,"height":416}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/7/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":970,"height":934,"image_format":"jpeg","image_sha256":"e947d7c4ffac6d35eee0124bee99e2dfcbc8e04ea188352ac6ba78fecb52d368","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_18_fig_2.jpg","caption":"FIG. 2. Structural formulas of the keto tautomers of Hhfac (a) and Hacac (b).","id":"test/atomic-layer-etching/experimental-usecase/18/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/18/fig_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":6,"width":307,"height":135},{"panel_id":"b","x":338,"y":7,"width":309,"height":132}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":650,"height":142,"image_format":"jpeg","image_sha256":"e4c4f8512bc1b90f0f3dd6975542c612226301b217a42b2f0a40b9231b1c4fc6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_10_figure_1.jpg","caption":"Figure 1. (a) Top and (b) side views of the most stable O-covered W(3 1 0) surface. The blue region indicates the atoms used in the DFPT calculation. The top W atoms coordinated by more than two O atoms, highlighted in the top region, are lifted out of their lattice positions due to the formation of $\\mathrm{W} - \\mathrm{O}$ bonds. The color coding is as follows: $\\mathrm{W} =$ gray, $\\mathrm{O} =$ red.","id":"test/atomic-layer-etching/simulation-usecase/10/figure_1","sample_id":"atomic-layer-etching/simulation-usecase/10/figure_1","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":7,"y":2,"width":279,"height":303},{"panel_id":"b","x":256,"y":5,"width":286,"height":297}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/Mechanism of Thermal Atomic Layer Etch of W Metal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":544,"height":305,"image_format":"jpeg","image_sha256":"09fe185c9e53380a810c8b9fb5d0da99520530fb623ba7e43d1d00799fe7b4ed","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_10_figure_2.jpg","caption":"Figure 2. The top and side views of dissociated $\\Omega_2$ molecules on the $\\mathbb{W}(3\\textbf{1} 0)$ surface at atop sites, bridge sites, alternate bridge sites, 3- fold sites, 4-fold sites, and subsurface sites are shown in a),b,c) d,e,and f) respectively. The color coding is as follows: $\\mathbb{W} =$ gray, $\\mathrm{O} =$ red.","id":"test/atomic-layer-etching/simulation-usecase/10/figure_2","sample_id":"atomic-layer-etching/simulation-usecase/10/figure_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":520,"height":614}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/Mechanism of Thermal Atomic Layer Etch of W Metal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":520,"height":614,"image_format":"jpeg","image_sha256":"228529b03c531dfa132efcf5a1d1d79e7e4efa1f627e304c6e66e97fa7f390f3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_10_figure_3.jpg","caption":"Figure 3. Snapshots (X1–X3) from MD simulation of two $\\mathrm{WCl}_6$ molecules adsorbed on the $\\mathrm{WO}_x$ surface along with the evolution of distances between the dissociated Cl atom and the donor/acceptor W atoms. The inset graph shows the distances and single-point DFT energies of the snapshots (relative to that of snapshot 322, X1) during the bond dissociation. The color coding is as follows: $\\mathrm{W} =$ gray, $\\mathrm{O} =$ red, and $\\mathrm{Cl} =$ green.","id":"test/atomic-layer-etching/simulation-usecase/10/figure_3","sample_id":"atomic-layer-etching/simulation-usecase/10/figure_3","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":5,"width":847,"height":341},{"panel_id":"b","x":4,"y":354,"width":853,"height":654}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/Mechanism of Thermal Atomic Layer Etch of W Metal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":859,"height":1014,"image_format":"jpeg","image_sha256":"01a0c4b000212c1c9091f4b3960e601c04dc1d7edfadbbf465022d082056769b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_12_figure_2.jpg","caption":"Figure 2. (a and $\\mathbf{a}^{\\prime}$ ) Equilibrium geometry of bulk $\\theta -\\mathrm{Al}_2\\mathrm{O}_3$ along the $a - c$ lattice plane in panel a along with the valence charge density as yellow spheres in panel $\\mathbf{a}^{\\prime}$ .The Al atoms marked with labels $\\mathrm{(Al1 - }$ Al4) are found in tetrahedral coordination sites of the oxygen lattice, while those that are not marked are in octahedral coordination sites. The isosurface value is set to $0.2\\mathrm{e} / \\mathrm{\\AA}^3$ b and $\\mathbf{b}^{\\prime}$ Optimized geometry of the $\\mathrm{Al}_2\\mathrm{O}_3$ $(\\overline{2} 01)$ surface slab in panel b along with the valence charge density in panel $\\mathbf{b}^{\\prime}$ . The isosurface value is set to 0.25 $\\mathrm{e} / \\mathrm{\\AA}^3$ .It can be seen that the electrons are localized around the O atoms, which is an indication of predominantly ionic bonding between Al and O.","id":"test/atomic-layer-etching/simulation-usecase/12/figure_2","sample_id":"atomic-layer-etching/simulation-usecase/12/figure_2","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Ball-and-stick model of bulk θ-Al₂O₃ viewed along the a–c lattice plane. Labeled Al atoms (Al1–Al4) occupy tetrahedral coordination sites, while unlabeled Al atoms are in octahedral coordination within the oxygen framework.\"},{\"panel_id\":\"b\",\"text\":\"Optimized atomic geometry of the θ-Al₂O₃ (2̄01) surface slab used in DFT calculations, highlighting the surface atomic arrangement relative to the bulk lattice.\"},{\"panel_id\":\"c\",\"text\":\"Valence charge density of bulk θ-Al₂O₃ visualized as yellow isosurfaces (0.20 e/ų), showing strong electron localization around oxygen atoms.\"},{\"panel_id\":\"d\",\"text\":\"Valence charge density of the θ-Al₂O₃ (2̄01) surface (isosurface = 0.25 e/ų), indicating that electron localization around oxygen atoms is largely preserved at the surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Electron density remains strongly localized around oxygen atoms, similar to the bulk.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The charge density is strongly concentrated around oxygen atoms, with minimal electron density shared between aluminum and oxygen. This spatial separation indicates that bonding in θ-Al₂O₃ is predominantly ionic rather than covalent. The visualization directly supports the interpretation of Al as a cation embedded in an oxygen-dominated electron cloud.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The (2̄01) surface exposes atomic coordination environments that differ from the bulk, including under-coordinated Al and O sites. These surface-specific geometries are where adsorption, fluorination, and ligand-exchange reactions occur during ALE. Modeling this surface therefore captures the chemically active structure relevant to etching mechanisms.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":17,"y":24,"width":297,"height":157},{"panel_id":"b","x":378,"y":22,"width":289,"height":154},{"panel_id":"c","x":10,"y":242,"width":308,"height":267},{"panel_id":"d","x":377,"y":242,"width":292,"height":267}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":672,"height":511,"image_format":"jpeg","image_sha256":"4a5c4195092f4dd46ff706552d73f8c075a8f59350b39fe059b68300618570bc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_12_figure_4.jpg","caption":"Figure 4. (a) Pictorial representation of the pathway between minima $\\mathrm{M}_{\\mathrm{B}}^{\\mathrm{I}}$ and $\\mathrm{M}_{\\mathrm{D}}^{\\mathrm{I}}$ that shows an aggregate of all $\\mathrm{H}$ atom positions as the $\\mathrm{H}$ atom hops from one surface $\\mathrm{O}$ atom to another $\\mathrm{O}$ atom in the adjacent row. (b) Similarly, for the pathway between minima $\\mathrm{M}_{\\mathrm{D}}^{\\mathrm{I}}$ and $\\mathrm{M}_{\\mathrm{C}}^{\\mathrm{I}}$ . Three images are chosen between the two minima and are optimized within the CI-NEB approach. (c) The graph shows the energy difference of the images with respect to $\\mathrm{M}_{\\mathrm{B}}^{\\mathrm{I}}$ and the energy barriers with respect to panels a and b. Here, $\\mathrm{TS}_{\\mathrm{BD}}^{\\mathrm{I}}$ and $\\mathrm{TS}_{\\mathrm{DC}}^{\\mathrm{I}}$ represent the transition states connecting $\\mathrm{M}_{\\mathrm{B}}^{\\mathrm{I}} - \\mathrm{M}_{\\mathrm{D}}^{\\mathrm{I}}$ and $\\mathrm{M}_{\\mathrm{D}}^{\\mathrm{I}} - \\mathrm{M}_{\\mathrm{C}}^{\\mathrm{I}}$ , respectively.","id":"test/atomic-layer-etching/simulation-usecase/12/figure_4","sample_id":"atomic-layer-etching/simulation-usecase/12/figure_4","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":10,"y":14,"width":333,"height":212},{"panel_id":"b","x":12,"y":307,"width":329,"height":187},{"panel_id":"c","x":412,"y":70,"width":503,"height":420}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":923,"height":497,"image_format":"jpeg","image_sha256":"693afaf7510788e67c9be35ecbd5507d72a7f92cd2b635fadfef61e9b52ea99b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_12_figure_5.jpg","caption":"Figure 5. Spontaneous dissociative adsorption of a HF molecule on the $\\theta -\\mathrm{Al}_2\\mathrm{O}_3$ (2 0 1) surface. Snapshots taken from geometry optimization run where geometry a is the chosen starting geometry with the HF molecule at least $3.0 \\mathrm{\\AA}$ from the surface. The HF molecule hydrogen bonds to a surface $\\mathrm{O}$ atom in geometry b. The onset of the HF dissociation is given in geometry c. The completely dissociated HF forming $-\\mathrm{Al} - \\mathrm{F}$ and $-\\mathrm{O} - \\mathrm{H}$ species at the surface can be seen in geometry d. Final optimized geometry $\\mathrm{M}_{\\mathrm{B}}^{\\mathrm{I}}$ is shown in geometry e. Panel f shows the total energy of the system relative to the starting geometry (a) for the optimization steps along with the changes in $\\mathrm{Al} - \\mathrm{F}$ , $\\mathrm{H} - \\mathrm{F}$ , and $\\mathrm{O} - \\mathrm{H}$ bond distances.","id":"test/atomic-layer-etching/simulation-usecase/12/figure_5","sample_id":"atomic-layer-etching/simulation-usecase/12/figure_5","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"multi-axis chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":16,"y":29,"width":128,"height":70},{"panel_id":"b","x":17,"y":122,"width":124,"height":74},{"panel_id":"c","x":17,"y":223,"width":124,"height":66},{"panel_id":"d","x":22,"y":313,"width":116,"height":75},{"panel_id":"e","x":17,"y":391,"width":142,"height":80},{"panel_id":"f","x":206,"y":43,"width":467,"height":402}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":678,"height":475,"image_format":"jpeg","image_sha256":"09b9d606fac06e4c27b3850e78f3e641a4301dc2680ac44944939b3d6dd0ee6e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_12_figure_7.jpg","caption":"Figure 7. Optimized geometries of $2 - 26 \\mathrm{HF}$ molecules adsorbed on the bare $\\mathrm{Al}_{2}\\mathrm{O}_{3}$ $(\\overline{2} 0 1)$ surface. Here, $\\mathrm{M}_{\\mathrm{B}}^{\\mathrm{X}}$ denotes a minimum with $X \\mathrm{HF}$ molecules, and in case there are several minima, they are indexed with a label Y. In some cases, multiple minima are shown to convey the fact that very different stable configurations are possible. In most of the minimum geometries shown above, a mixed dissociative and molecular adsorption of HF molecules can be seen.","id":"test/atomic-layer-etching/simulation-usecase/12/figure_7","sample_id":"atomic-layer-etching/simulation-usecase/12/figure_7","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"},{"panel_id":"h","label":"molecular structure diagram"},{"panel_id":"i","label":"molecular structure diagram"},{"panel_id":"j","label":"molecular structure diagram"},{"panel_id":"k","label":"molecular structure diagram"},{"panel_id":"l","label":"molecular structure diagram"},{"panel_id":"m","label":"molecular structure diagram"},{"panel_id":"n","label":"molecular structure diagram"},{"panel_id":"o","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Optimized adsorption geometry for two HF molecules (M²_A) on θ-Al₂O₃, showing dissociative adsorption with F bound to surface Al sites and H transferred to surface oxygen atoms.\"},{\"panel_id\":\"b\",\"text\":\"Alternative local minimum for two HF molecules (M²_B), illustrating a different dissociative configuration arising from surface site heterogeneity.\"},{\"panel_id\":\"c\",\"text\":\"Third stable configuration for two HF molecules (M²_C), highlighting the presence of multiple energetically comparable minima at low HF coverage.\"},{\"panel_id\":\"d\",\"text\":\"Optimized geometry for three HF molecules (M³), showing increased surface coverage with continued preference for dissociative adsorption.\"},{\"panel_id\":\"e\",\"text\":\"Five-HF adsorption configuration (M⁵), where dissociative adsorption remains dominant but intermolecular interactions between adsorbed species begin to emerge.\"},{\"panel_id\":\"f\",\"text\":\"Eight-HF adsorption configuration (M⁸_A), illustrating a relatively dispersed arrangement of HF-derived species across the surface.\"},{\"panel_id\":\"g\",\"text\":\"Alternative eight-HF minimum (M⁸_B), showing a more clustered adsorption motif and highlighting configurational diversity at the same coverage.\"},{\"panel_id\":\"h\",\"text\":\"Twelve-HF adsorption configuration (M¹²), where surface active sites are increasingly saturated and mixed dissociative–molecular adsorption becomes apparent.\"},{\"panel_id\":\"i\",\"text\":\"Fifteen-HF adsorption configuration (M¹⁵), demonstrating pronounced coexistence of molecularly adsorbed HF with dissociated H/F species due to surface saturation.\"},{\"panel_id\":\"j\",\"text\":\"Sixteen-HF adsorption configuration (M¹⁶), showing further crowding of the surface and increased stabilization of molecular HF through hydrogen-bonding networks.\"},{\"panel_id\":\"k\",\"text\":\"Eighteen-HF adsorption configuration (M¹⁸), where molecular adsorption becomes increasingly favorable as dissociative sites are exhausted.\"},{\"panel_id\":\"l\",\"text\":\"Twenty-two-HF adsorption configuration (M²²), highlighting dense surface coverage with extensive intermolecular interactions among HF-derived species.\"},{\"panel_id\":\"m\",\"text\":\"Twenty-four-HF adsorption configuration (M²⁴_A), representing a highly saturated surface with limited additional dissociation.\"},{\"panel_id\":\"n\",\"text\":\"Alternative twenty-four-HF minimum (M²⁴_B), illustrating another stable arrangement at near-maximum coverage.\"},{\"panel_id\":\"o\",\"text\":\"Twenty-six-HF adsorption configuration (M²⁶), corresponding to the highest HF coverage shown, dominated by molecular adsorption stabilized by surface and intermolecular interactions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"},{\"panel_id\":\"h\",\"text\":\"\"},{\"panel_id\":\"i\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Dissociative adsorption dominates.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As coverage increases, HF molecules compete for a limited number of reactive sites. This leads to multiple locally stable arrangements with similar energies, especially at intermediate coverages, increasing configurational diversity.\"}]},{\"panel_id\":\"o\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ALE processes often involve repeated HF exposure under conditions where surface saturation can occur. High-coverage adsorption influences fluorination efficiency, surface passivation, and reaction self-limitation. Accurately capturing these regimes is therefore essential for predictive ALE models.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Because the surface contains chemically inequivalent adsorption sites.\"}]}]","bbox":[{"panel_id":"a","x":12,"y":13,"width":231,"height":163},{"panel_id":"b","x":307,"y":12,"width":232,"height":163},{"panel_id":"c","x":619,"y":4,"width":206,"height":169},{"panel_id":"d","x":13,"y":222,"width":222,"height":169},{"panel_id":"e","x":303,"y":218,"width":237,"height":179},{"panel_id":"f","x":601,"y":218,"width":243,"height":174},{"panel_id":"g","x":13,"y":435,"width":234,"height":172},{"panel_id":"h","x":595,"y":433,"width":239,"height":176},{"panel_id":"i","x":306,"y":445,"width":228,"height":164},{"panel_id":"j","x":296,"y":642,"width":252,"height":182},{"panel_id":"k","x":597,"y":646,"width":236,"height":180},{"panel_id":"l","x":13,"y":640,"width":232,"height":180},{"panel_id":"m","x":13,"y":864,"width":243,"height":194},{"panel_id":"n","x":306,"y":866,"width":245,"height":192},{"panel_id":"o","x":588,"y":868,"width":256,"height":190}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":845,"height":1059,"image_format":"jpeg","image_sha256":"effd7329dd531cfca00ea8875650a50a211928f6b9cf38db324f726499025bb3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_12_figure_9.jpg","caption":"Figure 9. (a-e) Snapshots representing the hydrogen transport mechanism observed in the optimization of two HF molecules adsorbed on the alumina surface to form $\\mathbf{M}_{\\mathrm{C}}^{2}$ . (f) Complementary graph showing the trends of important interatomic distances and relative energy with respect to the initial geometry.","id":"test/atomic-layer-etching/simulation-usecase/12/figure_9","sample_id":"atomic-layer-etching/simulation-usecase/12/figure_9","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"multiple line chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":14,"y":7,"width":188,"height":149},{"panel_id":"b","x":28,"y":162,"width":178,"height":67},{"panel_id":"c","x":27,"y":236,"width":176,"height":72},{"panel_id":"d","x":29,"y":317,"width":172,"height":77},{"panel_id":"e","x":34,"y":408,"width":166,"height":76},{"panel_id":"f","x":241,"y":99,"width":432,"height":376}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":675,"height":486,"image_format":"jpeg","image_sha256":"821ae8ef13ca5f31119684bd000cc99de5858147f1f0147f1394e63555b6bc53","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_14_fig5.jpg","caption":"Fig.5. t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t a damaged region of the etched surface.","id":"test/atomic-layer-etching/simulation-usecase/14/fig5","sample_id":"atomic-layer-etching/simulation-usecase/14/fig5","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"multiple line chart"},{"panel_id":"e","label":"multiple line chart"},{"panel_id":"f","label":"multiple line chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":18,"width":477,"height":640},{"panel_id":"b","x":511,"y":18,"width":384,"height":611},{"panel_id":"c","x":962,"y":24,"width":396,"height":581},{"panel_id":"d","x":24,"y":736,"width":428,"height":720},{"panel_id":"e","x":484,"y":738,"width":428,"height":717},{"panel_id":"f","x":944,"y":738,"width":423,"height":717}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/images/fig5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/images/fig5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/Molecular dynamics simulations of silicon nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1367,"height":1475,"image_format":"jpeg","image_sha256":"d6f8afd1b3774b69fb6de6c7a93fbe02086a2eec0f408cb587abd063d14686c1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_18_fig_5.jpg","caption":"FIG. 5. Relaxed adsorption structures for one HF molecule interacting with the bare surface of $\\mathrm{aHfO_2}$ for a 1HF A, b 1HF B, and c 1HF C. The color coding is brown $= \\mathrm{Hf}$ red $= \\mathrm{O}$ white $= \\mathrm{H}$ and blue $= \\mathrm{F}$ .","id":"test/atomic-layer-etching/simulation-usecase/18/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/18/fig_5","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":46,"width":326,"height":211},{"panel_id":"b","x":338,"y":48,"width":327,"height":211},{"panel_id":"c","x":675,"y":43,"width":324,"height":214}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/Origin of enhanced thermal atomic layer etching of amorphous HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1000,"height":264,"image_format":"jpeg","image_sha256":"32e2ad95457396a6e23c33e145f6e2a9be4e65807905c4747e1a519bce4d5951","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_18_fig_6.jpg","caption":"FIG. 6. Relaxed geometries for HF coverages (a) 2HF B, (b) 2HF C, (c) 3HF B, (d) 3HF C, (e) 4HF B, and (f) 5HF A of amorphous $\\mathrm{HfO_2}$ were complete dissociation of HF occurred spontaneously. Color coding is the same as in Fig. 5.","id":"test/atomic-layer-etching/simulation-usecase/18/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/18/fig_6","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":55,"width":338,"height":190},{"panel_id":"b","x":351,"y":56,"width":324,"height":185},{"panel_id":"c","x":692,"y":61,"width":317,"height":185},{"panel_id":"d","x":11,"y":312,"width":326,"height":185},{"panel_id":"e","x":344,"y":314,"width":330,"height":185},{"panel_id":"f","x":681,"y":331,"width":323,"height":167}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/Origin of enhanced thermal atomic layer etching of amorphous HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1017,"height":503,"image_format":"jpeg","image_sha256":"0eb855167925de9a7313afd432f050c0355342d46ac1a0ed352b5fbc5033c708","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_18_fig_8.jpg","caption":"FIG. 8. Relaxed geometries for HF coverages (a) 5HF C, (b) 8HF C, and (c) 16HF A were $\\mathrm{H}_2\\mathrm{O}$ formed spontaneous. Color coding is the same as in Fig. 5.","id":"test/atomic-layer-etching/simulation-usecase/18/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/18/fig_8","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":37,"width":327,"height":164},{"panel_id":"b","x":342,"y":42,"width":323,"height":159},{"panel_id":"c","x":686,"y":43,"width":315,"height":159}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/Origin of enhanced thermal atomic layer etching of amorphous HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1009,"height":211,"image_format":"jpeg","image_sha256":"6e50395420ca5127b97aaa342948021300817d14ae63667581cb988be3598e9e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_18_fig_9.jpg","caption":"FIG. 9. Relaxed geometry for 28HF, where $\\mathrm{H}_2\\mathrm{O}_2$ formed spontaneously. Color coding is the same as in Fig. 5.","id":"test/atomic-layer-etching/simulation-usecase/18/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/18/fig_9","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":9,"y":8,"width":349,"height":256},{"panel_id":"b","x":409,"y":9,"width":256,"height":232}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/Origin of enhanced thermal atomic layer etching of amorphous HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":669,"height":267,"image_format":"jpeg","image_sha256":"0d189992b1fa3b4d6f7d000f89e3058af4003fe3fa0c45f74b13951ce99bb61d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_10.jpg","caption":"Figure 10. Relaxed geometries for HF coverages 2C, 4A, and 4B of $\\mathrm{ZrO_2}$ where complete dissociation of HF occurred spontaneously. Color coding is the same as in Figure 8.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_10","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_10","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Atomistic model showing the relaxed 2HF C adsorption geometry on the ZrO₂ surface, where HF is fully dissociated and incorporated into the surface structure.\"},{\"panel_id\":\"b\",\"text\":\"Relaxed atomic structure of the 4HF A configuration on ZrO₂, representing one stable dissociated HF arrangement at higher surface coverage.\"},{\"panel_id\":\"c\",\"text\":\"Alternative relaxed atomic structure for the same 4HF coverage on ZrO₂, illustrating a distinct but stable dissociation geometry compared to 4HF A.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ZrO₂\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both panels (b) and (c) represent the same higher HF coverage, labeled as 4HF. Despite having identical coverage, they illustrate two distinct but stable dissociation geometries, denoted as 4HF A and 4HF B. This indicates that multiple relaxed structural configurations are possible for the same concentration of adsorbed species on the ZrO₂ surface.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"4HF A\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":339,"height":196},{"panel_id":"b","x":351,"y":5,"width":313,"height":189},{"panel_id":"c","x":684,"y":7,"width":323,"height":190}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1011,"height":200,"image_format":"jpeg","image_sha256":"2d612737f3f24fc0b5e78b921c403406a34870d8830583074d19898c9b5d6865","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_13.jpg","caption":"Figure 13. Relaxed fluorination geometries for $\\mathrm{HfO_2}$ that resulted in $\\mathrm{H}_2\\mathrm{O}$ forming spontaneously. Color coding is the same as in Figure 8.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_13","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_13","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Relaxed fluorination geometry on HfO₂ (8C HF condition) showing spontaneous formation of one H₂O molecule at the surface. The annotated H–O–H angle is 104.2°.\"},{\"panel_id\":\"b\",\"text\":\"Relaxed fluorination geometry on HfO₂ (32 HF condition) showing spontaneous formation of two H₂O molecules. The annotated H–O–H angles are 104.1°.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A water (H₂O) molecule.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is very close to the gas-phase value of approximately 104.5°.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The label \\\"32 HF\\\" indicates a specific initial configuration where a higher concentration of HF species (likely 32 molecules or units within the simulation cell) was introduced to the HfO₂ system prior to the geometric relaxation. This defines the starting chemical environment that led to the observed result.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Spontaneous.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":5,"width":475,"height":263},{"panel_id":"b","x":485,"y":14,"width":522,"height":256}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_13.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1014,"height":273,"image_format":"jpeg","image_sha256":"f9b48e9b555cff7a50bc7b5cdddc307b2e2d2f6bda2acbe76094cfa3f4fd791f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_14.jpg","caption":"Figure 14. Relaxed fluorination geometries for $\\mathrm{ZrO_2}$ that resulted in $\\mathrm{H}_2\\mathrm{O}$ forming spontaneously. Color coding is the same as in Figure 8.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_14","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_14","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Relaxed fluorination geometry on ZrO₂ (12B HF configuration) showing spontaneous formation of one H₂O molecule. The annotated H–O–H bond angle is 110.2°.\"},{\"panel_id\":\"b\",\"text\":\"Relaxed fluorination geometry on ZrO₂ (16A HF configuration) showing spontaneous formation of two H₂O molecules. The annotated H–O–H bond angles are 109.4° and 110.8°.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"110.2°\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Spontaneous H₂O formation indicates that surface reactions can proceed without external activation energy once suitable local configurations are reached. This behavior is highly relevant for understanding how fluorination alters surface chemistry, as it suggests a thermodynamically favorable pathway for the removal of oxygen as water, which is a key step in many etching or surface modification mechanisms.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It increases from one H₂O molecule to two.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the angles are not identical. One is 110.8° and the other is 109.4°. This slight difference suggests that the local chemical environment and steric interactions on the ZrO₂ surface differ for each formed water molecule, leading to small variations in their relaxed geometries.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":507,"height":270},{"panel_id":"b","x":532,"y":5,"width":475,"height":268}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_14.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1011,"height":277,"image_format":"jpeg","image_sha256":"30f005fbdb5106d011c03266276c5649802fae639812504734a22f578e7d743d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_8.jpg","caption":"Figure 8. Relaxed adsorption structures for one HF molecule interacting with the bare surfaces of $\\mathrm{HfO_2}$ and $\\mathrm{ZrO_2}$ . The color coding is yellow $= \\mathrm{Hf}$ , green $= \\mathrm{Zr}$ , red $= \\mathrm{O}$ , white $= \\mathrm{H}$ , and blue $= \\mathrm{F}$ .","id":"test/atomic-layer-etching/simulation-usecase/25/figure_8","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_8","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Three relaxed adsorption geometries (1HF A, 1HF B, 1HF C) for one HF molecule on HfO2. The labeled Hf–F bond lengths span 1.94–1.98 Å, while O–H spans 0.97–0.99 Å, consistent with HF dissociation and surface hydroxyl formation.\"},{\"panel_id\":\"b\",\"text\":\"Three relaxed adsorption geometries (1HF A, 1HF B, 1HF C) for one HF molecule on ZrO2. The labeled Zr–F bond lengths span 1.95–2.01 Å, and O–H again spans 0.97–0.99 Å across configurations, indicating similar dissociative adsorption behavior with slightly longer metal–F distances on ZrO2.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The narrow spread suggests that the hydroxyl group experiences a similar chemical environment across the different adsorption sites, at least at the level captured by this bond metric. Even if the metal–F bond length changes slightly with local coordination (e.g., from A to B to C), the protonated oxygen appears to form a comparable O–H bond. This consistency is indicative of hydroxyl formation being a relatively robust and uniform outcome of HF dissociation on these oxide surfaces.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, both are 1.98 Å.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, both panels show an O–H bond length range of 0.97–0.99 Å.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The relaxed state.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":5,"width":999,"height":219},{"panel_id":"b","x":0,"y":232,"width":1007,"height":190}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1011,"height":428,"image_format":"jpeg","image_sha256":"4fd3dc93313151359d641990a40d0d2700f9128fe477d6cd9adc3a10e0528eaa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_9.jpg","caption":"Figure 9. Relaxed geometries for HF coverages 2A, 3C, 4C, 5A, and 5C of $\\mathrm{HfO}_2$ where complete dissociation of HF occurred spontaneously. Color coding is the same as in Figure 8.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_9","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_9","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Relaxed geometry for 2HF A on HfO2, under conditions where HF dissociates spontaneously (per caption). The panel represents a low-coverage case, useful as a reference for how dissociation products sit on the surface before crowding effects appear. Compared with higher-coverages in (c–e), the surface looks less congested around adsorption sites.\"},{\"panel_id\":\"b\",\"text\":\"Relaxed geometry for 3HF C on HfO2 with complete dissociation. Relative to 2HF A, the surface shows more dissociation fragments distributed across nearby sites, suggesting more site competition at moderate coverage. This panel serves as the transition point between sparse (a) and more crowded geometries (c–e).\"},{\"panel_id\":\"c\",\"text\":\"Relaxed geometry for 4HF C on HfO2 with complete dissociation. The higher density of adsorbates makes the local environment more constrained, which is typically where steric/electrostatic interactions begin to matter for adsorption motifs. It visually bridges the moderate coverage (b) and the highest coverage set (d–e).\"},{\"panel_id\":\"d\",\"text\":\"Relaxed geometry for 5HF A on HfO2 showing the highest HF coverage in this figure (5HF) with full dissociation. The surface appears densely populated with dissociation products, implying fewer “free” sites remain compared with (a–c). This is one of two distinct relaxed arrangements at the same coverage, showing configurational variability at fixed HF loading.\"},{\"panel_id\":\"e\",\"text\":\"Relaxed geometry for 5HF C on HfO2 at 5HF coverage with complete dissociation. It represents an alternative relaxed arrangement to (d) at the same coverage, indicating that multiple metastable/low-energy configurations can exist for identical HF counts. Comparing (d) vs (e) is mainly about adsorption-site distribution rather than changing chemistry, since both are fully dissociated cases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HfO₂.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Spontaneity in this context suggests that the transition from the molecularly adsorbed HF state to the dissociated state (forming Hf–F and surface –OH groups) is a downhill or barrierless process under the simulation conditions. This indicates that the dissociated state is thermodynamically more stable than the molecular state for these specific surface facets and coverage configurations. It allows the system to reach a local energy minimum during geometry optimization without requiring additional activation energy to overcome a transition state.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Hf–F bonds (fluorine atoms binding to surface metal centers)\\n-O–H bonds (protons binding to lattice oxygen atoms to form surface hydroxyls)\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":13,"y":5,"width":326,"height":216},{"panel_id":"b","x":352,"y":5,"width":323,"height":216},{"panel_id":"c","x":688,"y":5,"width":332,"height":216},{"panel_id":"d","x":149,"y":231,"width":325,"height":219},{"panel_id":"e","x":549,"y":235,"width":328,"height":215}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1020,"height":450,"image_format":"jpeg","image_sha256":"8f2f36bf7b7c2f70aeeab9860e1fee732c24356cd042dc1874e9ac669bd18f5c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig_1.jpg","caption":"FIG. 1. (a) Reoptimized trigonal lattice geometry for $\\mathsf{B}_2\\mathsf{O}_3$ bulk. (b) Bare (1 0 1) surface of trigonal $\\mathsf{B}_2\\mathsf{O}_3$ . (c) Fluorinated $\\mathsf{B}_2\\mathsf{O}_3$ surface from (b) after removing six surface O atoms.","id":"test/atomic-layer-etching/simulation-usecase/28/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/28/fig_1","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the reoptimized trigonal bulk B₂O₃ structure with the periodic unit cell highlighted, illustrating the three-dimensional boron–oxygen network.\"},{\"panel_id\":\"b\",\"text\":\"The figure presents the bare (101) surface of trigonal B₂O₃ after surface cleavage, exposing undercoordinated surface atoms and the open ring structure characteristic of this orientation.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the same surface after fluorination, where fluorine atoms bind to surface boron sites following removal of surface oxygen atoms, representing a chemically modified B₂O₃ surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Creating the (101) surface breaks periodicity and exposes undercoordinated boron and oxygen atoms at the surface. This results in an open surface network compared to the fully connected bulk structure. The reduced coordination at the surface provides sites that are more chemically accessible than those in the bulk lattice.\\nCreating the (101) surface breaks periodicity and exposes undercoordinated boron and oxygen atoms at the surface. This results in an open surface network compared to the fully connected bulk structure. The reduced coordination at the surface provides sites that are more chemically accessible than those in the bulk lattice.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Fluorine atoms bind to surface boron sites, replacing some surface oxygen coordination.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Fluorine forms strong B–F bonds, which changes the local coordination and electronic environment of surface boron atoms. This can reduce surface reactivity toward oxygen while enabling alternative reaction pathways relevant for etching or surface modification.\"}]}]","bbox":[{"panel_id":"a","x":11,"y":69,"width":284,"height":502},{"panel_id":"b","x":364,"y":67,"width":479,"height":504},{"panel_id":"c","x":912,"y":26,"width":491,"height":541}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1414,"height":575,"image_format":"jpeg","image_sha256":"a0c4f388e491219fe5cc552c83772da2c19cac0f291d231e6488431f8c671a1d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_3.jpg","caption":"Fig. 3. $\\theta\\text{-Al}_2\\mathrm{O}_3$ (20 1) crystal structure.","id":"test/atomic-layer-etching/simulation-usecase/34/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_3","subset":"molecular-structure-diagram","split":"test","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":530,"height":405}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":530,"height":405,"image_format":"jpeg","image_sha256":"322c4fb92f488c2d4fbf2e441020842b1209d367ff94afc35560777b0e68f938","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/molecular-structure-diagram/train/metadata.jsonl b/subsets/molecular-structure-diagram/train/metadata.jsonl index d0a9f1a7268bd5412edcada69c612c517c434f72..209a9eaec35e7c5fc8505a59284759d82400a8b4 100644 --- a/subsets/molecular-structure-diagram/train/metadata.jsonl +++ b/subsets/molecular-structure-diagram/train/metadata.jsonl @@ -1,138 +1,138 @@ -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_16_fig_1.jpg","caption":"FIG. 1. Schematic structures of the zirconium precursors $\\mathrm{Zr(Cp)(BuDAD)(O^iPr)}$ , $\\mathrm{Zr(MeCp)(TMEA)}$ , and $\\mathrm{Zr(MeS_Cp)(TEA)}$ .","id":"train/atomic-layer-deposition/experimental-usecase/16/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/16/fig_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/Sanni Seppala et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1011,"height":255,"image_format":"jpeg","image_sha256":"ab271457dcb5d564f3afeb71e145996cf8d3e5be8ae826a2cf2a0028ccf189ce","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":45,"width":254,"height":209},{"panel_id":"b","x":361,"y":3,"width":313,"height":250},{"panel_id":"c","x":766,"y":3,"width":245,"height":250}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_33_figure_1.jpg","caption":"Figure 1 Structural formula for bis(N,N'-diisopropylacetamidinato)cobalt(II) (a) and its molecular structure as determined by X-ray crystallography (b).","id":"train/atomic-layer-deposition/experimental-usecase/33/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/33/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/BOOYONG S. LIM et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":686,"height":300,"image_format":"jpeg","image_sha256":"287ba85c4e67e9b957e41a0d8c3640e506372f78eceac43516ae50b4b94b83f3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":3,"width":327,"height":295},{"panel_id":"b","x":338,"y":4,"width":346,"height":294}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_35_figure_1.jpg","caption":"Figure 1. Molecular structure of $(\\mathrm{BuMe}_2\\mathrm{Si})_2\\mathrm{Te}$ (thermal ellipsoids at $50\\%$ ). Te to Si distances are 2.5141(13) $\\mathring{\\mathrm{A}}$ and $\\mathrm{Si - Te - Si}$ angle is $101.51(6)^{\\circ}$","id":"train/atomic-layer-deposition/experimental-usecase/35/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/35/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/Viljami Pore et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":486,"height":273,"image_format":"jpeg","image_sha256":"fa2d1b88f0322fa62672777ce6ef54e0644a21992a83e5987cd66426f8c7535d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":6,"width":483,"height":264}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image depicts a molecular structure diagram illustrating the arrangement of atoms in a silicon containing Te precursor molecule.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"12\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The oxidation state is -2. This can be seen by the connection with two silicon atoms that have one electron to share.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Besides carbon impurities there can also be silicon impurities in the grown films.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1:2\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_37_figure_3.jpg","caption":"Figure 3. vdW epitaxy of $\\mathrm{PbI}_2$ on sapphire. (a) Schematic of the epitaxial alignment of $\\mathrm{PbI}_2$ on sapphire with either the bottom iodine layer or a $\\mathrm{PbI}_2$ monolayer shown on the $(0\\mathrm{001})$ sapphire surface. Characterization of an epitaxial $\\mathrm{PbI}_2$ film on sapphire. (b) In-plane pole figure at $25.95^{\\circ}2\\theta$ inset showing a zoomed view of the dashed area with both the $\\{0\\mathrm{1}\\bar{1} 2\\}$ sapphire and $\\{1\\bar{0}\\bar{1}\\bar{1}\\}$ $\\mathrm{PbI}_2$ reflections visible. Extracted (c) $\\beta$ scan along $\\alpha = 29^{\\circ}$ and (d) $\\alpha$ scan along $\\beta = 180^{\\circ}$ . (e) In-plane $\\phi$ scans of the $(1\\bar{1} 20)\\mathrm{PbI}_2$ $(39.45^{\\circ}2\\theta \\chi)$ and $(1\\bar{1}\\bar{2} 0)$ sapphire $(37.65^{\\circ}2\\theta \\chi)$ reflections. The data in (e) has been offset vertically for clarity.","id":"train/atomic-layer-deposition/experimental-usecase/37/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/37/figure_3","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"polar chart (rose chart)"},{"panel_id":"c","label":"spectra chart"},{"panel_id":"d","label":"spectra chart"},{"panel_id":"e","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/Mattinen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1142,"height":783,"image_format":"jpeg","image_sha256":"49a44705c892d742192e72d6061b56be7477adb07afed294f2135e3efda6daef","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":15,"y":55,"width":597,"height":392},{"panel_id":"b","x":623,"y":40,"width":508,"height":436},{"panel_id":"c","x":17,"y":493,"width":374,"height":286},{"panel_id":"d","x":393,"y":488,"width":363,"height":290},{"panel_id":"e","x":778,"y":492,"width":360,"height":286}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A molecular structure diagram illustrating the atomic arrangement in a bottom I layer and a PbI2 monolayer on a Sapphire substrate.\"},{\"panel_id\":\"b\",\"text\":\"A polar chart displaying the intensity distribution of sapphire and PbI2 reflections in reciprocal space.\"},{\"panel_id\":\"c\",\"text\":\"Spectra charts showing the intensity of reflections as a function of angle for different crystal planes.\"},{\"panel_id\":\"d\",\"text\":\"Spectra charts showing the intensity of reflections as a function of angle for different crystal planes.\"},{\"panel_id\":\"e\",\"text\":\"Spectra charts showing the intensity of reflections as a function of angle for different crystal planes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Layer Descriptio | Notation |\\n|------------------------|------------------|\\n| Bottom I layer | [2\\\\bar{1}10] sapphire |\\n| PbI₂ monolayer (I–Pb–I)| [2\\\\bar{1}10] PbI₂ |\"},{\"panel_id\":\"b\",\"text\":\"| Feature | Description |\\n|--------------|--------------------------------------|\\n| High Intensity | Around β₀ axis (aligned domains) |\\n| Color Scale | Log Intensity (High = red, Low = blue) |\"},{\"panel_id\":\"c\",\"text\":\"| Material | Peaks (° β) |\\n|--------------|---------------------------------------|\\n| (10\\\\bar{1}1) PbI₂ | ~0, ~60, ~120, ~180, ~240, ~300 |\"},{\"panel_id\":\"d\",\"text\":\"| Material | Peak Position (° α) |\\n|--------------|-----------------------|\\n| (10\\\\bar{1}1) PbI₂ | ~30 |\"},{\"panel_id\":\"e\",\"text\":\"| Material | Peaks (° φ) |\\n|-----------------|---------------------------------------|\\n| (11\\\\bar{2}0) PbI₂ | ~0, ~60, ~120, ~180, ~240, ~300 |\\n| (11\\\\bar{2}0) sapphire | ~0, ~90, ~180, ~270 |\"}]","vqa":"[{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In-plane XRD measurements confirmed the in-plane alignment, the absence of 30°/90° domains and the presence of some non-epitaxial domains\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The relatively broad peaks in β (FWHM 13°, figure (c)) and α scans (FWHM 9°, figure (d)) extracted from the in-plane pole figure suggest disorder in both the in-plane and out-of-plane orientations, respectively.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The pole figure measured at 25.95° 2θ corresponds to the asymmetric (1 0 \\\\bar(1) 1)PbI2 reflection but is also close enough to the asymmetric (0 1 \\\\bar(1) 2)sapphire reflection to yield information on the film/substrate registration. Three sharp peaks over a 360° rotation were observed for the sapphire reflection, whereas six broader peaks were seen for PbI2, both being as expected for a single in-plane orientation considering the symmetry of the reflections. The alignment of the (1 0 \\\\bar(1) 1)PbI2 and (0 1 \\\\bar(1) 2)sapphire reflections corresponds to the (0 0 1) [2 \\\\bar(11) 0]PbI2 ‖ (0 0 1)[2 \\\\bar(11) 0]Al2O3 epitaxial relation, i.e. parallel alignment of all the unit cell axes of PbI2 and sapphire as expected from the relatively small lattice mismatch between the film and the substrate.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_380883842d329e1d2658af904adc1caac071a4885e5bacdc9cf4eb516fb8605b.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/38/380883842d329e1d2658af904adc1caac071a4885e5bacdc9cf4eb516fb8605b","sample_id":"atomic-layer-deposition/experimental-usecase/38/380883842d329e1d2658af904adc1caac071a4885e5bacdc9cf4eb516fb8605b","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/380883842d329e1d2658af904adc1caac071a4885e5bacdc9cf4eb516fb8605b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/380883842d329e1d2658af904adc1caac071a4885e5bacdc9cf4eb516fb8605b.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"not_found"},"width":475,"height":322,"image_format":"jpeg","image_sha256":"2462b87d5233279f8f56df9c8e9fc127e214ce0af398c110b92e90042cfdbabd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":5,"width":219,"height":316},{"panel_id":"b","x":239,"y":21,"width":235,"height":300}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows molecular structures of MnO₂ and LiMn₂O₄ in a crystal lattice.\"},{\"panel_id\":\"b\",\"text\":\"The image displays spectral data for β-MnO₂ and LiMn₂O₄ materials, with energy on the x-axis and intensity on the y-axis.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"|Energy|Intensity LiMn2O4|β-MnO2|\\n|---|---|---|\\n|6535|Baseline|Baseline|\\n|6550|Increase|Increase|\\n|6575|Leveling|Leveling|\\n|6600|Constant|Constant|\\n|6615|Constant|Constant|\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectrum belonging to β-MnO₂ shows some sharper features, indicating more attributions to the energy in this range.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both spectra show the same trend, this indicates that the two materials have similar properties if they relate to the given spectra.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The material shows a cubic spinel structure. Meaning there is cubic symmetry.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The red dots indicate oxygen atoms. The pink areas indicate manganese atoms and the green areas denote lithium atoms.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_figure_1.jpg","caption":"Figure 1. Crystal structures of (a) spinel $\\mathrm{LiMn}_2\\mathrm{O}_4$ and (b) $\\beta -\\mathrm{MnO}_2$ . The interstitial sites of tetrahedral 8a and octahedral 16d are pointed. VESTA software was used to visualize the crystal structures of $\\mathrm{LiMn}_2\\mathrm{O}_4$ (ICDD PDF 35-0782) and $\\beta -\\mathrm{MnO}_2$ (ICDD PDF 24-0735).","id":"train/atomic-layer-deposition/experimental-usecase/38/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/38/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":672,"height":264,"image_format":"jpeg","image_sha256":"c8911656603582d84e3bcaaab723245378f1adbc53ff405ba10e447c5ebcdf4c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":24,"width":300,"height":240},{"panel_id":"b","x":343,"y":46,"width":329,"height":192}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure depicts a molecular structure diagram illustrating the arrangement of atoms within a crystal lattice. It shows oxygen (red spheres), manganese (purple spheres), and lithium (green spheres) atoms forming a complex crystalline structure.\"},{\"panel_id\":\"b\",\"text\":\"The figure depicts a molecular structure diagram illustrating the arrangement of atoms within a crystal lattice. It shows oxygen (red spheres) and manganese (purple spheres) atoms forming a complex crystalline structure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There are 6 oxygen atoms directly bonded to a single manganese atom.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Each manganese atom is connected to 6 oxygen atoms, which are each shared between 3 manganese atoms, so the foumula is MnO2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"β-MnO₂ adopts a rutile-type framework composed only of edge- and corner-sharing MnO₆ octahedra. It does not contain lithium-accessible interstitial sites like the tetrahedral positions present in spinel structures. This difference leads to fundamentally different ion-transport properties.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"(1) Crystal system: cubic (Fd3̄m) vs. tetragonal (P4₂/mnm); (2) Li content: Li in tetrahedral 8a sites vs. no lithium; (3) Mn coordination: octahedral 16d in both, but different connectivity; (4) Diffusion pathways: 3D network vs. 1D channels.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, lithium ions occupy tetrahedral sites in LiMn2O4 but are absent in β-MnO2.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Tetrahedral 8a sites–occupied by lithium ions, enabling intercalation.\\nOctahedral 16d sites–occupied by manganese ions, forming the rigid lattice.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"LiMn2O4 is suitable as a cathode material because its three-dimensional manganese oxide network allows for efficient lithium intercalation, even beyond the 1:1 Li/Mn ratio, providing high specific capacity. Additionally, the structure undergoes low-volume changes during charge-discharge cycling, which is critical for maintaining structural integrity in rigid thin-film battery configurations.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The lithium atoms are located in the 8a tetrahedral sites, whereas the manganese occupy the 16 d octrahedral sites.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There are four oxygen atoms connected to a single lithium atom.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spinel LiMn₂O₄ structure highlights tetrahedral 8a and octahedral 16d interstitial sites. Lithium ions occupy the tetrahedral 8a sites, while manganese ions are coordinated within MnO₆ octahedra. These sites are crucial because lithium transport between them governs electrochemical behavior.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"These sites determine where lithium resides and migrates within the lattice. Explicit labeling helps link crystallography to lithium diffusion pathways and electrochemical performance.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"LiMn₂O₄ has a 3D cubic spinel framework with interconnected tetrahedral 8a sites that allow Li⁺ diffusion in all directions. In contrast, β-MnO₂ has 1D channels along the c-axis that can only accommodate limited Li⁺ before requiring structural transformation. This is why β-MnO₂ converts to the spinel phase once lithium concentration exceeds x ≈ 0.5.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Wyckoff positions. Specifically, 8a denotes the tetrahedral sites occupied by lithium, and 16d denotes the octahedral sites occupied by manganese.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It prevents mechanical degradation and maintains structural integrity in rigid all-solid-state battery architectures where electrodes cannot accommodate large dimensional changes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lithium intercalation occurs via the tetrahedral 8a interstitial sites in the cubic spinel LiMn2O4 lattice. The three-dimensional manganese oxide network provides pathways for lithium ions to move in and out of the lattice, allowing for reversible insertion and removal during battery charge-discharge cycles.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_42_4bc1bd2251b735897bcb27c1db474c8ff962a78f4aa77f892b25b98853c272c7.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/42/4bc1bd2251b735897bcb27c1db474c8ff962a78f4aa77f892b25b98853c272c7","sample_id":"atomic-layer-deposition/experimental-usecase/42/4bc1bd2251b735897bcb27c1db474c8ff962a78f4aa77f892b25b98853c272c7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/4bc1bd2251b735897bcb27c1db474c8ff962a78f4aa77f892b25b98853c272c7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/4bc1bd2251b735897bcb27c1db474c8ff962a78f4aa77f892b25b98853c272c7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/Coyle et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"not_found"},"width":511,"height":214,"image_format":"jpeg","image_sha256":"265b8db49124fdee84bb5290b6d7e7ba4911704d97f923ef958cef5ccf5d42fe","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":508,"height":210}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_42_figure_2.jpg","caption":"Figure 2. X-ray structure of 1 (left) and 2 (right) with H-atoms and minor disordered contributions omitted for clarity and at $30\\%$ probability ellipsoids.","id":"train/atomic-layer-deposition/experimental-usecase/42/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/42/figure_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/Coyle et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1217,"height":408,"image_format":"jpeg","image_sha256":"7dd9b946ddec3acf004aac970354001c66e62e860ae9692164fb53c177103635","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":2,"width":535,"height":400},{"panel_id":"b","x":572,"y":4,"width":644,"height":400}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_42_figure_5.jpg","caption":"Figure 5. Optimized geometries of (a) 2 molecularly physisorbed on a smooth Cu (111) surface; (b) $\\mathrm{CuN(SiMe_3)_2}$ chemisorbed on the smooth surface; (c) NHC from 2 chemisorbed onto a rough surface; (d) NHC from 2 physisorbed on the smooth surface.","id":"train/atomic-layer-deposition/experimental-usecase/42/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/42/figure_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/Coyle et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":661,"height":192,"image_format":"jpeg","image_sha256":"b3462ad5912ed4943114f4f019547e54af14ec95c3ee48704db17d5945f518bc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":8,"width":164,"height":184},{"panel_id":"b","x":182,"y":34,"width":162,"height":158},{"panel_id":"c","x":349,"y":30,"width":149,"height":162},{"panel_id":"d","x":510,"y":18,"width":151,"height":174}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_57_figure_1.jpg","caption":"Figure 1. (a) Cesium precursor used in this work $\\mathrm{(Cs(btsa))}$ . (b) Growth per cycle value (GPC) of CsI films on silicon as a function of deposition temperature, deposited with 300 cycles and pulse durations of 1.5 and $0.5\\mathrm{s}$ for $\\mathrm{Cs(btsa)}$ and $\\mathrm{SnI_4}$ , respectively, and $1.0\\mathrm{s}$ purge durations. Inset shows an image of a CsI film on a $5\\times 5\\mathrm{cm}^2$ Si substrate deposited at $150^{\\circ}\\mathrm{C}$ . (c) CsI film thickness on silicon as a function of applied deposition cycles, deposited at $150^{\\circ}\\mathrm{C}$ , pulse durations of 1.5 and $0.5\\mathrm{s}$ for $\\mathrm{Cs(btsa)}$ and $\\mathrm{SnI_4}$ , respectively, and $1.0\\mathrm{s}$ purge durations. (d) GPC of CsI films on silicon as a function of $\\mathrm{Cs(btsa)}$ pulse duration at $150^{\\circ}\\mathrm{C}$ , $\\mathrm{SnI_4}$ pulse and purge durations fixed at 0.5 and $1.0\\mathrm{s}$ , respectively. (e) GPC of CsI films on silicon as a function of $\\mathrm{SnI_4}$ pulse duration at $150^{\\circ}\\mathrm{C}$ , $\\mathrm{Cs(btsa)}$ pulse and purge durations fixed at 1.5 and $0.5\\mathrm{s}$ , respectively. (f) GPC of CsI films on silicon as a function of purge duration at $150^{\\circ}\\mathrm{C}$ , $\\mathrm{Cs(btsa)}$ pulse and purge durations fixed at 1.5 and $0.5\\mathrm{s}$ , respectively.","id":"train/atomic-layer-deposition/experimental-usecase/57/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/57/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"line chart"},{"panel_id":"d","label":"line chart"},{"panel_id":"e","label":"line chart"},{"panel_id":"f","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/Weia et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1408,"height":728,"image_format":"jpeg","image_sha256":"60fa89be065929cb877349607644f607ebb57f7edf7835a0066a8602933c5123","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":123,"y":18,"width":278,"height":336},{"panel_id":"b","x":497,"y":7,"width":445,"height":352},{"panel_id":"c","x":950,"y":1,"width":455,"height":361},{"panel_id":"d","x":8,"y":373,"width":448,"height":353},{"panel_id":"e","x":501,"y":384,"width":432,"height":345},{"panel_id":"f","x":988,"y":379,"width":419,"height":345}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A molecular structure diagram illustrating the atomic arrangement of the cesium precursor Cs(btsa). The bulky silylamide ligands are clearly visible, highlighting their role in enhancing precursor volatility while influencing surface reaction kinetics during the ALD process.\"},{\"panel_id\":\"b\",\"text\":\"A line plot showing the dependence of growth per cycle (GPC, in Å/cycle) on deposition temperature. A well-defined ALD temperature window is observed between 150 °C and 175 °C, where the GPC remains stable and reaches a maximum value of approximately 3.3 Å/cycle. At temperatures above 200 °C, the GPC decreases sharply, suggesting precursor desorption or reduced surface residence time.\"},{\"panel_id\":\"c\",\"text\":\"A linear plot of film thickness as a function of deposition cycles (0–400 cycles). The linear relationship confirms layer-by-layer ALD growth behavior. The linear fit passes through the origin, indicating instant nucleation on the silicon substrate with no observable nucleation delay.\"},{\"panel_id\":\"d\",\"text\":\"A saturation curve showing the variation of GPC with Cs(btsa) pulse duration. Due to the bulky molecular structure of the Cs precursor, longer pulse times (approximately 1.0–1.5 s) are required to fully saturate the surface, demonstrating self-limiting adsorption behavior characteristic of ALD.\"},{\"panel_id\":\"e\",\"text\":\"A line plot depicting the influence of SnI₄ pulse duration on GPC. Saturation is achieved rapidly at short pulse times (approximately 0.25 s), reflecting the smaller molecular size and higher reactivity of the SnI₄ precursor compared to Cs(btsa).\"},{\"panel_id\":\"f\",\"text\":\"A plot showing GPC as a function of purge time between precursor exposures. The GPC remains constant over the studied purge durations, indicating effective removal of excess precursors and by-products and confirming the absence of parasitic CVD reactions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Deposition temperature (°C) | GPC (Å) |\\n|---|---|\\n| 150 | 3.30 |\\n| 200 | 2.87 |\\n| 250 | 2.60 |\\n| 300 | 1.08 |\\n| 350 | 0.5 |\"},{\"panel_id\":\"c\",\"text\":\"| Deposition cycles | Thickness (nm) |\\n|---|---|\\n| 0 | 0 |\\n| 100 | 30 |\\n| 200 | 70 |\\n| 300 | 100 |\\n| 400 | 130 |\"},{\"panel_id\":\"d\",\"text\":\"| Cs(btsa) pulse duration (s) | GPC (Å) |\\n|---|---|\\n| 0.5 | 1.0 |\\n| 1.0 | 3.0 |\\n| 1.5 | 3.3 |\\n| 2.0 | 3.3 |\"},{\"panel_id\":\"e\",\"text\":\"| SnI₄ pulse duration (s) | GPC (Å) |\\n|---|---|\\n| 0.1 | 2.18 |\\n| 0.2 | 3.3 |\\n| 0.5 | 3.2 |\\n| 1.0 | 3.5 |\"},{\"panel_id\":\"f\",\"text\":\"| Purge duration (s) | GPC (Å) |\\n|---|---|\\n| 0.0 | 3.0 |\\n| 0.5 | 3.0 |\\n| 1.0 | 3.0 |\\n| 1.5 | 3.0 |\\n| 2.0 | 3.0 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Cs(btsa) precursor pulse (~1.5 s).\\n\\n2. Inert gas purge (~1.0 s).\\n\\n3. SnI₄ precursor pulse (~0.5 s).\\n\\n4. Inert gas purge (~1.0 s).\\nThis sequence uses pulse and purge times within the saturated regimes, ensuring complete surface reactions and byproduct removal for self-limiting growth.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An x-intercept at Cycle 50 indicates a nucleation delay, meaning the first 50 cycles are spent overcoming the surface energy barrier via island growth. As a result, very thin films (<10 nm) would be discontinuous and contain pinholes, rather than forming a uniform, conformal layer. In contrast, the near-zero intercept on silicon indicates immediate nucleation, which is ideal for ultrathin, continuous films.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This provides excellent conformality and precise thickness control. The self-limiting reactions ensure uniform deposition on all surfaces of the 3D structure, while the linear growth allows exact thickness tuning by cycle count. This is critical for creating a consistent, optimized scintillation layer across the complex detector geometry.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"GPC is stable in an ALD window (~150-200°C) then decreases at higher temperatures. The decrease is likely due to precursor decomposition or desorption of the Cs(btsa) precursor at elevated temperatures, which reduces the amount of reactive species available for the self-limiting surface reaction.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_60_figure_1.jpg","caption":"Figure 1. Chemical structure of the $\\mathrm{Y(EtCp)}_2(\\mathrm{iPr - amd})$ precursor.","id":"train/atomic-layer-deposition/experimental-usecase/60/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/60/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/Zhao et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"60","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":289,"height":227,"image_format":"jpeg","image_sha256":"4e1e6d2b271308548bc9f4586aa8d5dfc6324572042412aa97d72aee5d19dd59","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":288,"height":225}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_64_fig_1.jpg","caption":"FIG. 1. Structure of the palladium $\\beta$ -ketoiminato precursor $\\mathrm{Pd(keim2)}_2$ .","id":"train/atomic-layer-deposition/experimental-usecase/64/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/64/fig_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"64","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":584,"height":389,"image_format":"jpeg","image_sha256":"d57bbf7536b2e590dcb91ecc7a3c9069fcae9030060f0494ba3a913e9dc4f134","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":584,"height":389}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the molecular structure of the palladium ketoiminato precursor Pd(keim2)2, illustrating the Pd center coordinated to two ketoiminato ligands.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Precursor | Structure |\\n|---|---|\\n| Pd(keim₂)₂ | Palladium ketoiminato complex with a Pd center coordinated to two ketoiminato ligands |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The chelating ketoiminato ligands stabilize the palladium center and facilitate controlled deposition in the ALD process. The molecular structure ensures that the Pd atom is accessible for surface reactions while maintaining sufficient volatility and thermal stability, making it suitable for uniform thin-film growth.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Pd(keim2)2 has a relatively simple coordination structure with a Pd center and two ketoiminato ligands, which may differ in complexity compared to multi-ligand Pd precursors.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Palladium central atom, Two ketoiminato ligands coordinated to Pd, Ligands forming a chelating structure around Pd\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_10.jpg","caption":"Figure 10. Organic molecules used as precursors in ALD/MLD processes in combination with rare earth elements.","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_10","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_10","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"},{"panel_id":"h","label":"molecular structure diagram"},{"panel_id":"i","label":"molecular structure diagram"},{"panel_id":"j","label":"molecular structure diagram"},{"panel_id":"k","label":"molecular structure diagram"},{"panel_id":"l","label":"molecular structure diagram"},{"panel_id":"m","label":"molecular structure diagram"},{"panel_id":"n","label":"molecular structure diagram"},{"panel_id":"o","label":"molecular structure diagram"},{"panel_id":"p","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":995,"height":1305,"image_format":"jpeg","image_sha256":"9b2562c562d7bab959721bf15099d789e6959fc540539c15fd4ad39cdf1407d1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":26,"width":149,"height":310},{"panel_id":"b","x":184,"y":13,"width":232,"height":332},{"panel_id":"c","x":456,"y":9,"width":257,"height":334},{"panel_id":"d","x":751,"y":9,"width":243,"height":329},{"panel_id":"e","x":12,"y":357,"width":138,"height":257},{"panel_id":"f","x":172,"y":360,"width":229,"height":248},{"panel_id":"g","x":390,"y":361,"width":293,"height":156},{"panel_id":"h","x":709,"y":360,"width":285,"height":239},{"panel_id":"i","x":418,"y":564,"width":258,"height":288},{"panel_id":"j","x":9,"y":612,"width":380,"height":429},{"panel_id":"k","x":278,"y":614,"width":136,"height":175},{"panel_id":"l","x":746,"y":638,"width":208,"height":211},{"panel_id":"m","x":551,"y":872,"width":430,"height":151},{"panel_id":"n","x":408,"y":992,"width":285,"height":302},{"panel_id":"o","x":26,"y":1047,"width":336,"height":250}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Terephthalic acid (TPA).\"},{\"panel_id\":\"b\",\"text\":\"2 aminoterephthalic acid (NH2 TPA).\"},{\"panel_id\":\"c\",\"text\":\"Tetrafluoroterephthalic acid (F TPA).\"},{\"panel_id\":\"d\",\"text\":\"Tetrabromoterephthalic acid (Br TPA).\"},{\"panel_id\":\"e\",\"text\":\"Benzene 1,4 diol (BDO).\"},{\"panel_id\":\"f\",\"text\":\"Pyridine 3 carboxylic acid (PDA).\"},{\"panel_id\":\"g\",\"text\":\"Pyridine 2,6 dicarboxylic acid (2,6 PDC).\"},{\"panel_id\":\"h\",\"text\":\"Pyridine 3,5 dicarboxylic acid (3,5 PDC).\"},{\"panel_id\":\"i\",\"text\":\"Pyrazine 2,3 dicarboxylic acid (PZA).\"},{\"panel_id\":\"j\",\"text\":\"Uracil (Ura).\"},{\"panel_id\":\"k\",\"text\":\"Cytosine (Cyt).\"},{\"panel_id\":\"l\",\"text\":\"1,3,5 triazine 2,4,6 triol (TZO).\"},{\"panel_id\":\"m\",\"text\":\"Naphthalene 2,6 dicarboxylic acid (2,6 NDA).\"},{\"panel_id\":\"n\",\"text\":\"Biphenyl 4,4 dicarboxylic acid (BBDC).\"},{\"panel_id\":\"o\",\"text\":\"2 hydroxyquinoline 4 carboxylic acid (HQA).\"},{\"panel_id\":\"p\",\"text\":\"Anthracene 9,10 dicarboxylic acid (9,10 ADA).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"},{\"panel_id\":\"h\",\"text\":\"\"},{\"panel_id\":\"i\",\"text\":\"\"},{\"panel_id\":\"j\",\"text\":\"\"},{\"panel_id\":\"k\",\"text\":\"\"},{\"panel_id\":\"l\",\"text\":\"\"},{\"panel_id\":\"m\",\"text\":\"\"},{\"panel_id\":\"n\",\"text\":\"\"},{\"panel_id\":\"o\",\"text\":\"\"},{\"panel_id\":\"p\",\"text\":\"\"},{\"panel_id\":\"q\",\"text\":\"\"},{\"panel_id\":\"r\",\"text\":\"\"},{\"panel_id\":\"s\",\"text\":\"\"},{\"panel_id\":\"t\",\"text\":\"\"},{\"panel_id\":\"u\",\"text\":\"\"},{\"panel_id\":\"v\",\"text\":\"\"},{\"panel_id\":\"w\",\"text\":\"\"},{\"panel_id\":\"x\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"2 aminoterephthalic acid (NH2 TPA)\\n\\n, Tetrafluoroterephthalic acid (F TPA)\\n\\n, Tetrabromoterephthalic acid (Br TPA)\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"They provide acidic groups that can react with the surface bound lanthanide species to form Ln organic linkages in a self limiting manner, enabling hybrid lanthanide organic film growth. The review highlights that many such organics have been used as ALD/MLD precursors in combination with rare earth elements.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It red shifts the emission wavelength, but tends to weaken the emission intensity.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Improved mechanical properties compared to purely inorganic films\\n\\nSpacing between Ln3+ centers that can reduce concentration quenching\\n\\nPossible sensitization of Ln3+ luminescence by the organic component\\n\\nTailoring of the excitation wavelength range via linker choice\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_4.jpg","caption":"Figure 4. Survey over the different rare earth precursor classes commonly employed for the ALD and ALD/MLD of rare earth containing thin films. Color bars indicate successful ALD employment of the compound class for the respective element. R represents an element of the extended rare earth elements, while R' and R\" refer to specific substituents. These are: $\\mathsf{H} =$ Hydrogen, $\\mathsf{Me} =$ Methyl, $\\mathsf{Et} =$ Ethyl, $\\mathsf{Pr} =$ Isopropyl, $\\mathsf{Bu} =$ Butyl, $\\mathsf{tBu} =$ Tert-butyl.","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_4","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"periodic table map"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1348,"height":852,"image_format":"jpeg","image_sha256":"8a10481aba9cd13efae69a339de373796e11a243d3552d6e8471a70a63a4d83b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":632,"width":1256,"height":222},{"panel_id":"a","x":1,"y":3,"width":1256,"height":615}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Representative rare earth ALD precursor ligand families are shown with example structures (diketonates, cyclopentadienyls, amidinate based, guanidinates, alkoxides, silylamides, acetamidinates, formamidinates). Colored squares indicate which rare earth elements have reported ALD use for each class.\"},{\"panel_id\":\"b\",\"text\":\"Periodic table map of the extended rare earth elements (Sc, Y, La to Lu) used as the color key for the element coding in (a).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Element | Symbol |\\n| --- | --- |\\n| Sc | Sc |\\n| Y | Y |\\n| La | La |\\n| Ce | Ce |\\n| Pr | Pr |\\n| Nd | Nd |\\n| Sm | Sm |\\n| Eu | Eu |\\n| Gd | Gd |\\n| Tb | Tb |\\n| Dy | Dy |\\n| Ho | Ho |\\n| Er | Er |\\n| Tm | Tm |\\n| Yb | Yb |\\n| Lu | Lu |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The grouping highlights how precursor design for rare earth ALD and ALD/MLD is commonly discussed in terms of the coordinating ligand family, because the ligand controls volatility, thermal stability, and surface reaction behavior. By showing multiple classes side by side, the figure provides a quick overview of what chemistries have been used successfully across the rare earth series. The colored squares then connect each class to specific rare earth elements for which ALD use has been reported, helping readers see coverage and gaps.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Silylamides\\n\\n, Acetamidinates\\n\\n, Formamidinates\\n\\n, Guanidinates\\n\\n, Acetamidinate bis cyclopentadienyls (contains an amidinate plus cyclopentadienyl ligands)\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The substituents tune steric bulk and intermolecular interactions, which can shift melting point and volatility and can also influence surface reaction rates, so changing R′ and R″ is a standard way to adjust deliverability and reactivity of a precursor without changing the metal center.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_12_figure_1.jpg","caption":"Figure 1. Structure of adsorbed $\\mathrm{HfCl_4}$ at bridge oxygen sites of the monoclinic $\\mathrm{HfO_2}$ (001) surface with coverages of (a) 0 and (b) $5.7\\mathrm{H}_2\\mathrm{O}$ molecule. $\\mathrm{nm}^{-2}$ . The white, red, green, and gray spheres represent hydrogen, oxygen, chlorine, and hafnium atoms, respectively.","id":"train/atomic-layer-deposition/simulation-usecase/12/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/12/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. Mukhopadhyay et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1314,"height":653,"image_format":"jpeg","image_sha256":"f67b983ddd0d116283ed33e0543f2fd487f676c4f42aa4c6c16b9546e6a05f5e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":32,"width":602,"height":568},{"panel_id":"b","x":706,"y":0,"width":608,"height":599}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_12_figure_2.jpg","caption":"Figure 2. Structure of adsorbed $\\mathrm{HfCl_4}$ at dibridge oxygen sites on the $\\mathrm{m - HfO_2}$ (001) surface with coverages of (a) 1.9 and (b) $5.7\\mathrm{H}_2\\mathrm{O}$ molecule. $\\mathrm{nm}^{-2}$ .","id":"train/atomic-layer-deposition/simulation-usecase/12/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/12/figure_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. Mukhopadhyay et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":636,"height":1364,"image_format":"jpeg","image_sha256":"b68bfd55dbd70d60af759e199f2d832478aead5b5ce35c1019b306d9e33d5921","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":23,"width":596,"height":584},{"panel_id":"b","x":9,"y":693,"width":627,"height":620}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_12_figure_3.jpg","caption":"Figure 3. Structure of the $\\mathrm{HfCl_4}$ precursor adsorbed at a bridge-hydroxyl multiple site of the $\\mathrm{m - HfO_2}$ (001) surface with a water coverage of 5.7 $\\mathrm{H}_2\\mathrm{O}$ molecule. $\\mathrm{nm}^{-2}$ (75%).","id":"train/atomic-layer-deposition/simulation-usecase/12/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/12/figure_3","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. Mukhopadhyay et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":625,"height":600,"image_format":"jpeg","image_sha256":"723601868c2e88eecf8b35572fc40c80832fd3832ddadfa19e037893f4f8788a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":0,"width":616,"height":600}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_12_figure_4.jpg","caption":"Figure 4. Potential energy profile for the ligand exchange reaction between gaseous $\\mathrm{HfCl_4}$ and $\\mathrm{Hf - OH}$ (s) where the metal precursor is adsorbed at a bridge-hydroxyl mixed site. The stationary points correspond to (a) initial reactant: $\\mathrm{Hf - (OH)}$ $\\mathrm{(s) + HfCl_4}$ g), (b) adsorbed complex: $\\mathrm{Hf - (OH).HfCl_4(s)}$ (c) transition state, (d) adsorbed HCl on the $\\mathrm{HfO_2}$ surface, and (e) products: $\\mathrm{Hf - OHCl_3 + HCl}$","id":"train/atomic-layer-deposition/simulation-usecase/12/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/12/figure_4","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"line chart"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. Mukhopadhyay et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1150,"height":931,"image_format":"jpeg","image_sha256":"8df02d4599b1a1fb7495d8d3afa0dc8c5534921dce3aca3d43c713b19ae6b544","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"d","x":693,"y":390,"width":320,"height":273},{"panel_id":"b","x":448,"y":661,"width":327,"height":265},{"panel_id":"c","x":456,"y":41,"width":281,"height":322},{"panel_id":"e","x":789,"y":49,"width":332,"height":335},{"panel_id":"f","x":40,"y":5,"width":338,"height":309},{"panel_id":"a","x":15,"y":297,"width":1117,"height":619}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A molecular structure diagram illustrating the stationary point of the initial reactant.\"},{\"panel_id\":\"b\",\"text\":\"A molecular structure diagram illustrating the stationary point of the transition state.\"},{\"panel_id\":\"c\",\"text\":\"A molecular structure diagram illustrating the stationary point of the products.\"},{\"panel_id\":\"d\",\"text\":\"A line chart displaying the potential energy profile for the ligand exchange reaction with the molecular structure diagrams of the stationary points.\"},{\"panel_id\":\"e\",\"text\":\"A molecular structure diagram illustrating the stationary point of the adsorbed HCl on the HfO2 surface.\"},{\"panel_id\":\"f\",\"text\":\"A molecular structure diagram illustrating the stationary point of the adsorbed complex.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"| Energy (kcal/mol) | a | b | c | d | e |\\n| --- | --- | --- | --- | --- | --- |\\n| Energy | 0 | -32.5 | -2.5 | -5 | -3.0 |\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The stationary points correspond to the initial reactants, the adsorbed complex, the transition state, the adsorbed HCl on the HfO2 surface, and the products.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is weakly bonded to the surface: this corresponds to a physisorption process.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After the first stationary point, the energy decreases significantly where the complex is adsorbed. Then, the energy increases and remains approximately constant, unless an HCl adsorbed onto the surface, which has a lower energy value.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The stationary point associated to the adsorbed complex has the lower energy values (approximately -32.5 kcal/mol).\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_12_figure_5.jpg","caption":"Figure 5. Comparison of the potential energy profiles for the reaction of gaseous $\\mathrm{HfCl_4}$ and $\\mathrm{Hf - OH(s)}$ calculated using a cluster model (dashed line) and a periodic model (full line) with $100\\%$ coverage. The data for the cluster model have been taken from Reference 33. The stationary points correspond to (a) initial reactant: $\\mathrm{Hf - (OH)}$ (s) + $\\mathrm{HfCl_4}$ (g), (b) adsorbed complex: $\\mathrm{Hf - (OH)}$ $\\mathrm{HfCl_4}$ (s), (c) transition state, and (d) products: $\\mathrm{Hf - OHfCl_3 + HCl}$ .","id":"train/atomic-layer-deposition/simulation-usecase/12/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/12/figure_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"multiple line chart"},{"panel_id":"e","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. Mukhopadhyay et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1070,"height":886,"image_format":"jpeg","image_sha256":"b82df1a62b540732ca342acd4147b760060ade73c817c90cfa0ec7b279e8ce5a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"d","x":741,"y":139,"width":258,"height":315},{"panel_id":"b","x":7,"y":323,"width":1055,"height":556},{"panel_id":"c","x":383,"y":79,"width":286,"height":306},{"panel_id":"e","x":417,"y":598,"width":648,"height":278},{"panel_id":"a","x":50,"y":7,"width":292,"height":315}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A molecular structure diagram illustrating the stationary point of the initial reactant.\"},{\"panel_id\":\"b\",\"text\":\"A molecular structure diagram illustrating the stationary point of the transition state.\"},{\"panel_id\":\"c\",\"text\":\"A molecular structure diagram illustrating the stationary point of the products.\"},{\"panel_id\":\"d\",\"text\":\"A line chart displaying the potential energy profile for the reaction of gaseous HfCl4 and Hf-OH(s).\"},{\"panel_id\":\"e\",\"text\":\"A molecular structure diagram illustrating the stationary point of the adsorbed complex.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"| Energy (kcal/mol) | Slab Model | Cluster Model |\\n|------------------|------------|--------------|\\n| 0 | 0 | 0 |\\n| -5 | -2.5 | -5 |\\n| -10 | -6 | -9 |\\n| -25 | -26 | -24 |\"},{\"panel_id\":\"e\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The stationary points are the same, and the overall reaction profiles are very similar.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both the slab and cluster models show the same tendency, but the cluster model shows the highest energy values for the adsorbed complex, while the slab model shows the highest energy values for the transition state and products.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The e subfigure related to the adsorbed complex.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_12_figure_6.jpg","caption":"Figure 6. Potential energy profile for the ligand exchange reaction between gaseous water and the preadsorbed metal precursor. Notice that the precursor Hf atom of the adsorption complex is 5-fold coordinated. The stationary points correspond to (a) initial reactants: $-\\mathrm{HfCl}_3(\\mathrm{s}) + \\mathrm{H}_2\\mathrm{O}$ (g), (b) adsorbed complex: $-\\mathrm{HfCl}_3\\cdot \\mathrm{H}_2\\mathrm{O}$ (s), (c) transition state, (d) adsorbed HCl on $\\mathrm{HfO_2}$ surface, and (e) products: $-\\mathrm{HfCl}_2\\cdot \\mathrm{OH} + \\mathrm{HCl}$ .","id":"train/atomic-layer-deposition/simulation-usecase/12/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/12/figure_6","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. Mukhopadhyay et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1147,"height":881,"image_format":"jpeg","image_sha256":"5d3df3a0bdbdfd636ba792dd5372b8fee803403985105b3d625943af204605fd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"d","x":657,"y":648,"width":250,"height":240},{"panel_id":"b","x":221,"y":301,"width":263,"height":282},{"panel_id":"c","x":480,"y":47,"width":205,"height":210},{"panel_id":"e","x":853,"y":279,"width":254,"height":274},{"panel_id":"a","x":115,"y":2,"width":278,"height":263}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A molecular structure diagram illustrating the stationary point of the initial reactant.\"},{\"panel_id\":\"b\",\"text\":\"A molecular structure diagram illustrating the stationary point of the transition state.\"},{\"panel_id\":\"c\",\"text\":\"A molecular structure diagram illustrating the stationary point of the adsorbed complex.\"},{\"panel_id\":\"d\",\"text\":\"A molecular structure diagram illustrating the stationary point of the products.\"},{\"panel_id\":\"e\",\"text\":\"A reaction energy profile diagram showing the potential energy profile for the ligand exchange reaction between H2O(g) and the preabsorbed metal precursor.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"| Energy (kcal/mol) | a | b | c | d | e |\\n|---|---|---|---|---|---|\\n| -15 | - | -13 | - | - | - |\\n| -10 | - | - | - | - | - |\\n| -5 | - | - | - | -4 | - |\\n| 0 | - | - | - | - | -1 | \\n| 5 | - | - | - | - | - | \\n| 10 | - | - | 12.5 | - | - | \\n| 15 | 15 | - | - | - | - |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"First, the potential energy of the adsorbed complex decreases to -13 kcal/mol. It then rises to the transition state before falling again when HCl is adsorbed onto the HfO2 surface. Finally, a slight increase is shown to the final stationary point.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The HCl molecule is weakly bound to the surface; this is why it desorbs.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The stationary points correspond to the initial reactants, the adsorbed complex, the transition state, the adsorbed HCl on the HfO2 surface, and the products, for the ligand exchange reaction between gaseous water and preadsorbed metal precursor complex.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Hf atom of the adsorbed precursor has five-fold coordination.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_12_figure_7.jpg","caption":"Figure 7. Potential energy profile for the ligand exchange reaction between gaseous water and the preadsorbed metal precursor complex. Notice that here the Hf atom of the adsorbed precursor is 6-fold coordinated. The stationary points correspond to (a) initial reactant: $-\\mathrm{HfCl}_3\\cdot \\mathrm{H}_2\\mathrm{O}$ $(\\mathrm{s}) + \\mathrm{H}_2\\mathrm{O}$ (g), (b) adsorbed complex: $-\\mathrm{HfCl}_3\\cdot (\\mathrm{H}_2\\mathrm{O})_2$ (s), (c) transition state, (d) adsorbed HCl on the $\\mathrm{HfO_2}$ surface, and (e) products: $-\\mathrm{HfCl}_2\\cdot \\mathrm{H}_2\\mathrm{O}\\cdot \\mathrm{OH} + \\mathrm{HCl}$ .","id":"train/atomic-layer-deposition/simulation-usecase/12/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/12/figure_7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"line chart"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. Mukhopadhyay et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1214,"height":905,"image_format":"jpeg","image_sha256":"044e0044fc20609a2439c0b4f5b11e34ef310506184abd154780249044b27131","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"d","x":648,"y":364,"width":280,"height":286},{"panel_id":"b","x":207,"y":634,"width":313,"height":269},{"panel_id":"c","x":4,"y":256,"width":936,"height":499},{"panel_id":"e","x":951,"y":607,"width":250,"height":294},{"panel_id":"f","x":416,"y":28,"width":278,"height":296},{"panel_id":"a","x":8,"y":1,"width":305,"height":265}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A molecular structure diagram illustrating the stationary point of the initial reactant.\"},{\"panel_id\":\"b\",\"text\":\"A molecular structure diagram illustrating the stationary point of the transition state.\"},{\"panel_id\":\"c\",\"text\":\"A line chart showing the potential energy profile for the ligand exchange reaction between H2O(g) and the preabsorbed metal precursor.\"},{\"panel_id\":\"d\",\"text\":\"A molecular structure diagram illustrating the stationary point of the adsorbed HCl on HfO2 surface.\"},{\"panel_id\":\"e\",\"text\":\"A molecular structure diagram illustrating the stationary point of the adsorbed complex.\"},{\"panel_id\":\"f\",\"text\":\"A molecular structure diagram illustrating the stationary point of the products.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"| Energy (kcal/mol) | a | b | c | d | e |\\n| --- | --- | --- | --- | --- | --- |\\n| 15 | - | - | 12.5 | - | - |\\n| 10 | - | - | - | - | - |\\n| 5 | - | - | - | - | - |\\n| 0 | 0 | - | - | - | -1 | \\n| -5 | - | - | - | -6 | - | \\n| -10 | - | - | - | - | - | \\n| -15 | - | -13 | - | - | - |\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The potential energy first decreases strongly for the adsorbed complex, then increases to the transition state and finally decreases again for the last two stationary points.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The water addition to the aquo-trichloro hafnium complex is favorable.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The stationary points correspond to the initial reactants, the adsorbed complex, the transition state, the adsorbed HCl on the HfO2 surface, and the products, for the ligand exchange reaction between gaseous water and preadsorbed metal precursor complex.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Hf atom of the adsorbed precursor has six-fold coordination.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_12_figure_9.jpg","caption":"Figure 9. Snapshots of MD runs: (a) 4.6 ps (300 K), (b) 6.6 ps (575 K), (c) 8.4 ps (575 K), and (d) 9.6 ps (575 K). The $C^2$ ions of the adsorbed metal precursors get solvated with water molecules associated with the water multilayer at $575~\\mathrm{K}$ . Note that concomitant with dissociation of $\\mathrm{Hf - Cl}$ bonds facilitated by solvation, the water adsorbed on the metal precursor loses its proton to the surface. Generally, one also sees the densification process, where the precursor forms a third bond with the $\\mathrm{HfO_2}$ surface.","id":"train/atomic-layer-deposition/simulation-usecase/12/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/12/figure_9","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. Mukhopadhyay et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1241,"height":1370,"image_format":"jpeg","image_sha256":"30ff85c30f78b4d254e2f4df5f3869d67afea7d5de1c2e66c0cc8b58a75c2471","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":4,"y":688,"width":595,"height":579},{"panel_id":"b","x":664,"y":22,"width":567,"height":570},{"panel_id":"a","x":10,"y":12,"width":579,"height":592},{"panel_id":"d","x":651,"y":678,"width":592,"height":602}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_15_fig3.jpg","caption":"Fig.3. t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t h e t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t a t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t o t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t e t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t h","id":"train/atomic-layer-deposition/simulation-usecase/15/fig3","sample_id":"atomic-layer-deposition/simulation-usecase/15/fig3","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/fig3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/fig3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/Chengxing Cui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":955,"height":464,"image_format":"jpeg","image_sha256":"fadf689537a6468993b69a506ededc64970d975f7f63ed1c1c6b73281b03f12b","metadata_license":"MIT for repository metadata where applicable; 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see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":8,"width":231,"height":231},{"panel_id":"b","x":250,"y":8,"width":233,"height":231},{"panel_id":"c","x":497,"y":6,"width":223,"height":235},{"panel_id":"d","x":737,"y":6,"width":206,"height":242},{"panel_id":"e","x":9,"y":264,"width":220,"height":222},{"panel_id":"f","x":241,"y":262,"width":238,"height":227},{"panel_id":"g","x":491,"y":262,"width":242,"height":225},{"panel_id":"h","x":745,"y":258,"width":210,"height":227}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_15_fig_1.jpg","caption":"Fig. 1. $\\mathrm{Si_{23}H_{24}(OH)_4}$ two-dimer cluster used here to simulate the silicon surface. The red, gray and white small balls represent oxygen, silicon and hydrogen atoms, respectively. (For interpretation of the references to color in this figure legend, the reader is referred to the web version of this article.)","id":"train/atomic-layer-deposition/simulation-usecase/15/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/15/fig_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/Chengxing Cui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":642,"height":425,"image_format":"jpeg","image_sha256":"464826a67f6ad1b2b22bda7d3d7807b59e874b670a3e5550473cfe410c07347f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":7,"width":640,"height":418}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_15_fig_7.jpg","caption":"Fig. 7. Transition state structure for the water loss reaction of adjacent $\\mathrm{Zr - OH}$ groups.","id":"train/atomic-layer-deposition/simulation-usecase/15/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/15/fig_7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/Chengxing Cui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":642,"height":572,"image_format":"jpeg","image_sha256":"6267e008b36f0f881fabeeee3c633efb2e1c432b7aa13be70c9297c8809ced5d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":3,"width":635,"height":566}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_11.jpg","caption":"Figure 11: Schrodinger suite computed precursors (heteroleptic and homoleptic) when three halide (fluorine, chlorine, and iodine) ligands are united around tetravalent titanium metal centre (colour grey represents titanium, orange is fluorine, green is chlorine, and magenta is iodine) [128].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_11","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_11","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":642,"height":695,"image_format":"jpeg","image_sha256":"0e9c82fd51b5d7b38dcd3d2b20a2cced872c2866059959f0f2c6ad3f188f91a3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":636,"height":689}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_13.jpg","caption":"Figure 13: $C_{24}$ sinking on the surface of $\\mathrm{Cu(111)}$ e at various temperatures. (a)–(f) $C_{24}$ cross-sections on the surface of $\\mathrm{Cu(111)}$ MD simulations after 120 ps at temperatures of 1,200, 1,250, 1,300, 1,350, 1,400 and $1,450\\mathrm{K}$ , respectively. Copper atoms that are close to the boundary of $C_{24}$ are shown in yellow. (g) The $C_{24}$ profiles that were extracted at the different temperatures (a)–(f). The ochre and cyan balls show copper and carbon atoms, respectively. (h) The computed Lindemann index of copper substrates in solid, semi-molten, and liquid forms. (i) Temperature-dependent average heights of C24 and its neighbouring atoms during the final 20 ps [119].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_13","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_13","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"},{"panel_id":"h","label":"multiple scatter plot"},{"panel_id":"i","label":"grouped bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1319,"height":1478,"image_format":"jpeg","image_sha256":"fa757344760760f5b2a06cff1c97609e7acb8ec61a6f7991fafe7f5102c143ab","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":13,"y":20,"width":546,"height":272},{"panel_id":"b","x":733,"y":17,"width":543,"height":274},{"panel_id":"c","x":10,"y":312,"width":544,"height":273},{"panel_id":"d","x":733,"y":312,"width":544,"height":273},{"panel_id":"e","x":11,"y":604,"width":547,"height":273},{"panel_id":"f","x":733,"y":600,"width":544,"height":275},{"panel_id":"g","x":0,"y":906,"width":1319,"height":160},{"panel_id":"h","x":9,"y":1083,"width":672,"height":395},{"panel_id":"i","x":688,"y":1087,"width":609,"height":391}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A series of molecular structure diagrams showing the arrangement of atoms at different temperatures.\"},{\"panel_id\":\"b\",\"text\":\"A series of molecular structure diagrams showing the arrangement of atoms at different temperatures.\"},{\"panel_id\":\"c\",\"text\":\"A series of molecular structure diagrams showing the arrangement of atoms at different temperatures.\"},{\"panel_id\":\"d\",\"text\":\"A series of molecular structure diagrams showing the arrangement of atoms at different temperatures.\"},{\"panel_id\":\"e\",\"text\":\"A series of molecular structure diagrams showing the arrangement of atoms at different temperatures.\"},{\"panel_id\":\"f\",\"text\":\"A series of molecular structure diagrams showing the arrangement of atoms at different temperatures.\"},{\"panel_id\":\"g\",\"text\":\"A series of molecular structure diagrams showing the arrangement of atoms at different temperatures.\"},{\"panel_id\":\"h\",\"text\":\"A scattered plot showing the Lindemann index (a.u) (a measure of atomic displacement/disorder) over MD time (ps) computed for copper substrates in three states solid, semi-molten, and liquid states.\"},{\"panel_id\":\"i\",\"text\":\"A bar chart comparing the height of C24 and Cu at different temperatures. The averaged heights were measured for C24 and Cu and its neighbouring atoms during the final 20 ps\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"},{\"panel_id\":\"h\",\"text\":\"| Lindemann index (a.u.) | MD time (ps) Solid | Semi-molten | Liquid |\\n|---|---|---|---|\\n| 0 | 0.025 | 0.03 | 0.10 |\\n| 20 | 0.020 | 0.03 | 0.10 |\\n| 40 | 0.020 | 0.03 | 0.10 |\\n| 60 | 0.020 | 0.03 | 0.10 |\\n| 80 | 0.020 | 0.03 | 0.10 |\\n| 100 | 0.020 | 0.03 | 0.10 |\\n| 120 | 0.020 | 0.030 | 0.10 |\"},{\"panel_id\":\"i\",\"text\":\"| Temperature | Height of C24 | height of Cu |\\n|---|---|---|\\n| 1200 | 4.7 | 3.3 |\\n| 1250 | 4.8 | 3.4 |\\n| 1300 | 5.1 | 3.7 |\\n| 1350 | 4.0 | 3.7 |\\n| 1400 | 3.2 | 3.2 |\\n| 1450 | 3.1 | 3.1 |\"}]","vqa":"[{\"panel_id\":\"i\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The rapid increase indicates the thermal energy overcoming the adsorption bond. The molecule transitions from a chemisorbed or physisorbed state, where it is held close to the surface, to a detached or precursor-to-desorption state as intermolecular vibrations exceed the binding force.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Thermal Stability Limit: It identifies ~1300 K as the critical temperature where this specific molecule desorbs, defining the upper thermal limit for stable surface reactions.\\n\\nProcess Window: It shows that the molecule remains anchored to the catalytic surface below 1300 K, which is essential for enabling sufficient time for surface diffusion and chemical reactions during growth or catalysis.\"}]},{\"panel_id\":\"h\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. It remains low and stable, indicating minimal atomic disorder.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Lindemann index (δ) is a dimensionless parameter used to quantify atomic disorder or the onset of melting in a material. It is defined as the root-mean-square (RMS) fluctuation in the distance between atom pairs, normalized by the average nearest-neighbor distance.\\n\\nLow δ (~0.01–0.06): Atoms vibrate slightly → Solid\\nIntermediate δ (~0.06–0.15): Some atoms break free, others stay bound → Semi-molten / Premelting\\nHigh δ (>0.15): Atoms diffuse freely → Liquid\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_15.jpg","caption":"Figure 15: (a) Schematics of ReaxFF-MD calculations at 1,000 K of consecutive deposition of TMA and H20 dosages on a GeOx/Ge substrate resulting in $A l_{2}O_{3}$ ALD. (b) The absorption of TMA precursor on the surface of GeOx/Ge during ReaxFF-MD simulation. The marked molecules (1 and 2) in the first TMA dosage snapshot are by-products of $H_{3}C - CH_{3}$ and $CH_{4}$ . (c) Numerical representation of the oxygen atoms that were coordinated to Ge in the $A l_{2}O_{3}$ ALD simulation performed using ReaxFF-MD on GeOx/Ge [10].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_15","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_15","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"reaction energy profile diagram"},{"panel_id":"c","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":961,"height":1472,"image_format":"jpeg","image_sha256":"3aadc2cae35982a9eb1625f59d978c206b2c48483b717d9ee24bc033e8edc991","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":522,"y":1033,"width":420,"height":423},{"panel_id":"b","x":0,"y":1033,"width":513,"height":430},{"panel_id":"a","x":0,"y":1,"width":959,"height":1022}],"summarization":"[{\"panel_id\":\"b\",\"text\":\"The graph represents the Energy profile for a computation (ReaxFF-MD) simulations for Al2O3 ALD using TMA/H2O sequential doses on a GeOx(5 Å)/Ge(100) slab at 1000 K, the chemical reaction where a trimethylaluminum (TMA) molecule adsorbs onto a germania (Ge-O-*) surface site, forming an adsorbed Ge-O-Al(CH₃)₂ complex while releasing a methane (CH₄) molecule.\"},{\"panel_id\":\"c\",\"text\":\"This figure is a stacked graph showing the evolution of Germanium (Ge) coordination number (CN) to Oxygen over time during a simulated ALD process. It tracks the structure through two TMA doses and one H₂O dose, showing how the GeOx interface changes as Al₂O₃ deposition proceeds.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Energy [eV] | reaction state |\\n|----------------|--------------------|\\n| 0.0 | Initial State |\\n| -0.1 | Transition state | \\n| -3.02 |Final state |\"},{\"panel_id\":\"c\",\"text\":\"| Time (ns) | Counts (%) | CN |\\n|-----------|------------|-----|\\n| 0 | 13.38 | 1 |\\n| 0 | 10.8 | 2 |\\n| 0 | 17.68 | 3 |\\n| 0 | 48.11 | 4 |\\n| 0 | 9.75 | 5 |\\n| 0.5 | 12.64 | 1 |\\n| 0.5 | 13.69 | 2 |\\n| 0.5 | 37.35 | 3 |\\n| 0.5 | 34.15 | 4 |\\n| 0.5 | 0.1 | 5 |\\n| 1 | 10.86 | 1 |\\n| 1 | 16.5 | 2 |\\n| 1 | 42.39 | 3 |\\n| 1 | 29.11 | 4 |\\n| 1 | 0.1 | 5 |\\n| 1.5 | 10.86 | 1 |\\n| 1.5 | 18.3 | 2 |\\n| 1.5 | 37.35 | 3 |\\n| 1.5 | 32 | 4 |\\n| 1.5 | 0.1 | 5 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thin GeOx layer makes the surface more reactive than a fully oxidized SiO₂ surface. The Ge-O-* bond is weaker than a Si-O-* bond due to germanium's lower electronegativity, making the oxygen more basic and nucleophilic. This likely lowers the initial energy state for the TMA molecule, contributing to a different (potentially lower) overall reaction barrier for the first ALD half-cycle on this surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the process requires sufficient thermal energy to overcome the ~3 eV barrier, justifying the high simulation temperature of 1000 K used to model the reaction kinetics. However, the exothermic nature confirms the reaction is thermodynamically favorable and will proceed to completion once activated, forming a stable Al-O-Ge linkage that anchors the Al₂O₃ film to the substrate.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"0-0.5 ns: First TMA exposure.\\n\\n0.5-1.0 ns: Second TMA exposure.\\n\\n1.0-1.5 ns: H₂O exposure.\\nThe key control parameter is the coordination number (CN) of Ge atoms to O atoms. It monitors the structural evolution of the GeOx interlayer, indicating oxidation state changes and intermixing during ALD.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SiO₂ barrier layer is preferable. Direct ALD on GeOx leads to dynamic intermixing and a broad, unstable GeOx/Al₂O₃ interface with variable Ge oxidation states (CN 1-5), which are potential charge traps. A thin SiO₂ provides a more chemically stable, passivating interface with Ge, preventing this intermixing and resulting in lower interfacial defect density.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_16.jpg","caption":"Figure 16: Reactive MD dissociation of copper(II) acetylacetonate on the $\\mathrm{Cu(110)}$ surface [154]. Initially, the $\\mathrm{Cu - O}$ bond broke and the acac-ligand tilted (7.3 ps). The acac-ligand then totally dissociated from the $\\mathrm{Cu(acac)}_2$ molecule, thereby creating acac and $\\mathrm{Cu(acac)}$ species on the surface (10.8 ps). Finally, $\\mathrm{Cu(acac)}$ dissociated into copper and acac species on the surface after 18.5 ps [154].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_16","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_16","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_16.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":644,"height":534,"image_format":"jpeg","image_sha256":"81b0920ddcc98cea9ec35537dc53c259b4954f7f4fefbceb26e2eb3bf660d24b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":3,"y":269,"width":319,"height":260},{"panel_id":"b","x":331,"y":8,"width":309,"height":253},{"panel_id":"a","x":0,"y":4,"width":322,"height":255},{"panel_id":"d","x":330,"y":272,"width":312,"height":258}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_17.jpg","caption":"Figure 17: Reactive MD snapshots for the reaction between copper(II) acetylacetonate and hydrogen atoms on the copper (110) surface [154].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_17","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_17","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_17.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_17.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1166,"height":566,"image_format":"jpeg","image_sha256":"2782b72ec71bb9a98b1606da790e824a2c0925cd94a180619a12272ab8ec4385","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":601,"y":17,"width":272,"height":552},{"panel_id":"b","x":299,"y":10,"width":292,"height":553},{"panel_id":"a","x":11,"y":5,"width":279,"height":560},{"panel_id":"d","x":885,"y":19,"width":272,"height":541}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_18.jpg","caption":"Figure 18: MD trajectory [189]. The copper monolayer was initially well aligned and in proportion with the substrate. Through surface diffusion, copper atoms were then rapidly disassembled and moved away from their equilibrium locations when molecular dynamics was run.","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_18","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_18","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_18.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_18.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":875,"height":1008,"image_format":"jpeg","image_sha256":"e0080b989e5cd68eb20b3b2d33ef34f1a5fe448ad1a7f3c3f52fd6acaf69692d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":4,"y":517,"width":434,"height":483},{"panel_id":"b","x":455,"y":8,"width":418,"height":499},{"panel_id":"a","x":4,"y":3,"width":427,"height":499},{"panel_id":"d","x":436,"y":524,"width":432,"height":480}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_6.jpg","caption":"Figure 6: (a) Slab configurations of $\\mathsf{Pt}_2\\mathsf{Ru}_3$ alloy built on platinum-based face-centred cubic structures for diverse conformities of platinum and ruthenium atoms. (b) Slab configurations of $\\mathsf{Pt}_2\\mathsf{Ru}_3$ alloy built on ruthenium-based hexagonal close-packed structures for various conformations of platinum and ruthenium atoms [106].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_6","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1039,"height":1220,"image_format":"jpeg","image_sha256":"38c35bb23711e2f6b3aaa024138d7849b2daa4e59ee4ccd1d277679facaf9787","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":2,"y":604,"width":1036,"height":601},{"panel_id":"a","x":12,"y":7,"width":1024,"height":587}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_8.jpg","caption":"Figure 8: Primary orientations of $\\mathrm{MeCpPtMe_3}$ on a hydroxylated graphene surface models (a and b). (Grey = carbon, blue = platinum, red = oxygen, and white = hydrogen atoms) [19].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_8","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":875,"height":463,"image_format":"jpeg","image_sha256":"900bbf092f5d1795d60fe18d256b8513748b74f7a137f364a8dbb4f9a2e406fb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":451,"y":6,"width":420,"height":452},{"panel_id":"a","x":354,"y":0,"width":0,"height":1}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_9.jpg","caption":"Figure 9: Steps and products in the dissociation reaction. (a) and (b) stretching and rotation of $\\mathrm{Zn - O}$ bonds in the $\\mathrm{Zn(acac)2}$ complex when H atoms are introduced, (c) stretching and torsion increase along the $\\mathrm{Zn - O}$ bond, (d) the $\\mathrm{Zn - O}$ bond reaches its maximum length as the H atoms move closer to the complex centre and (e) final step upon the completion of $\\mathrm{Zn^{2 + }}$ extraction and formation of the O and H bond [77].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_9","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":650,"height":906,"image_format":"jpeg","image_sha256":"12e1842b29c3e582283a49e4138270b54b217eec4dca8548d03cf6fdfdece373","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"d","x":4,"y":309,"width":405,"height":325},{"panel_id":"b","x":279,"y":8,"width":362,"height":286},{"panel_id":"c","x":348,"y":314,"width":298,"height":298},{"panel_id":"e","x":0,"y":624,"width":647,"height":280},{"panel_id":"a","x":4,"y":2,"width":286,"height":283}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_19_84c188891e9f5a7dd3e9676f30756ca0444ee275d66c374f2ec10f4e82062772.jpg","caption":"ON adsorption and dissociation on (b) $\\mathrm { I n } _ { 2 } \\mathrm { O } _ { 3 } ,$ (c) ${ \\mathrm { G a } } _ { 2 } { \\mathrm { O } } _ { 3 } ,$ and (d) ${ \\mathrm { Z n O } }$ The reaction energy of a single step, $\\Delta E _ { n } ,$ was calculated by $\\Delta E _ { n } = E _ { S n } -$ Esn-1.","id":"train/atomic-layer-deposition/simulation-usecase/19/84c188891e9f5a7dd3e9676f30756ca0444ee275d66c374f2ec10f4e82062772","sample_id":"atomic-layer-deposition/simulation-usecase/19/84c188891e9f5a7dd3e9676f30756ca0444ee275d66c374f2ec10f4e82062772","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"reaction energy profile diagram"},{"panel_id":"c","label":"reaction energy profile diagram"},{"panel_id":"d","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/84c188891e9f5a7dd3e9676f30756ca0444ee275d66c374f2ec10f4e82062772.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/84c188891e9f5a7dd3e9676f30756ca0444ee275d66c374f2ec10f4e82062772.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/Dong-Gyu Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1320,"height":1009,"image_format":"jpeg","image_sha256":"35df400c355ac5ac4633117e48c76b4a17de1a731a0cf5499735b8691281078f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":13,"y":572,"width":647,"height":433},{"panel_id":"b","x":709,"y":42,"width":611,"height":449},{"panel_id":"a","x":7,"y":48,"width":665,"height":454},{"panel_id":"d","x":694,"y":572,"width":619,"height":431}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_2_fig_1.jpg","caption":"Fig. 1. The models (a) $\\mathrm{Si(OH)_3 - OH}$ , (b) $\\mathrm{Si(OSiH_3)_3 - OH}$ and (c) $\\mathrm{Si_9O_3H_{12} - H - OH}$ , representing $\\mathrm{SiO_2}$ surface. Oxygen atoms are red, silicon atoms are grey and hydrogen atoms are light grey. (For interpretation of the references to color in this figure legend, the reader is referred to the web version of this paper.)","id":"train/atomic-layer-deposition/simulation-usecase/2/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/2/fig_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/Jie Ren et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1005,"height":711,"image_format":"jpeg","image_sha256":"24f1991dab5a8f78a0c37c32ea131a2995f32ea5b6014d6519db4e28f65b43b4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":20,"y":9,"width":313,"height":311},{"panel_id":"b","x":529,"y":167,"width":476,"height":442},{"panel_id":"c","x":20,"y":360,"width":471,"height":351}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_23_fig1.jpg","caption":"Fig.1 The structures of (a) a typical Pt nanoparticle with Pt (111), Pt (100) and Pt edge sites and (b) the precursors trimethylaluminum (TMA) and dimethylaluminum isopropoxide (DMAI).","id":"train/atomic-layer-deposition/simulation-usecase/23/fig1","sample_id":"atomic-layer-deposition/simulation-usecase/23/fig1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/Jiaqiang Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":653,"height":317,"image_format":"jpeg","image_sha256":"d1caf3481eb6ca625450be84e6b7e0230084e353d58600bc7cb3f9c70a4917b3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":6,"width":393,"height":310},{"panel_id":"b","x":429,"y":16,"width":224,"height":292}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_23_fig_9.jpg","caption":"Fig. 9 (a) The charge transfer and Al-C bond lengths of TMA and DMAI and (b) structure changes before and after TMA and DMAI adsorption.","id":"train/atomic-layer-deposition/simulation-usecase/23/fig_9","sample_id":"atomic-layer-deposition/simulation-usecase/23/fig_9","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/Jiaqiang Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1370,"height":375,"image_format":"jpeg","image_sha256":"851ec9d4ab0a6d06c7fa259d89e548a6b2e13ef1ee9f7804d4edac73f9b6dc44","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":10,"width":286,"height":364},{"panel_id":"b","x":313,"y":8,"width":1052,"height":361}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_1.jpg","caption":"Figure 1. (A) DFT optimized surface structure of hydroxylated $\\mathsf{HfO}_2$ .[6] Terminal hydroxyl group (a), terminal adsorbed water (b), bridging hydroxyl (c), three coordinated oxygen (d), four coordinated oxygen (e), and seven coordinated hafnium (f) are highlighted. (Red = O, White = H, large grey = Hf). (B) Schematic 2D diagram illustrating mapping of the same surface structure. Blue and red boxes show the cation and anion sites, respectively. The dashed lines show the connection between sites in this 2D diagram but the actual c.n. in three dimensions is also given.","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1144,"height":542,"image_format":"jpeg","image_sha256":"25a9cd319e43d151b38488d7a0e74839506e02a9aa6c59edb6b8923441de32fe","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":564,"height":532},{"panel_id":"b","x":565,"y":4,"width":577,"height":538}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_11.jpg","caption":"Figure 11. Top view of the surface evolution during the first cycle. Snapshots show: (A) The substrate which includes two layers of oxygen (O and OH groups). (B) The end of the metal pulse with a surface that is depleted of protons due to the desorption of HX. (C) The end of the purge with a minor amount of further desorption. (D) The end of the oxygen pulse in which the arrival of $\\mathsf{H}_2\\mathsf{O}$ molecules causes oxygen and protons to be introduced to the surface. Fragments for discussion (a-f) are highlighted by circles. The dashed box shows an area where adsorption of the next metal precursor is blocked because of the steric effect.","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_11","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_11","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1078,"height":1059,"image_format":"jpeg","image_sha256":"d9bfe2109be8687f611cb6aae2f8e71037db5618525014afed4f67776a4ba686","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":21,"y":7,"width":526,"height":521},{"panel_id":"b","x":554,"y":7,"width":521,"height":519},{"panel_id":"c","x":15,"y":538,"width":538,"height":511},{"panel_id":"d","x":555,"y":536,"width":515,"height":515}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_13.jpg","caption":"Figure 13. Top view of the surface at the end of the 18th metal pulse. $\\mathsf{HfX}_3,$ $\\mathsf{HfX}_{2},$ and HfX are highlighted by circle, hexagon, and square, respectively. The dashed box shows free space where adsorption of $\\mathsf{HfX}_4$ does not occur. The O and OH groups in the dashed box are highly coordinated or blocked by the remaining ligands. [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_13","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_13","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":606,"height":605,"image_format":"jpeg","image_sha256":"625ee0260f468b1924d28c5d49ddb4dac188b49fdd382c29e592c8a7faf009c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":8,"width":592,"height":592}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_14.jpg","caption":"Figure 14. Side view of ALD growth for $\\mathsf{HfO}_2$ after 20 cycles. (A) Direct adsorption of $\\mathsf{H}_2\\mathsf{O}$ molecules through HfX is considered (cooperative effect is neglected). As a result, the growth rate is overestimated by a factor of 2 that obtained when including the cooperative effect only. (B) Cooperation between the HfX is considered to adsorb $\\mathsf{H}_2\\mathsf{O}$ molecule. [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_14","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_14","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1008,"height":486,"image_format":"jpeg","image_sha256":"075b7b3f5126999b6e4c17fc6afe361e92e0419aff2ca19bfd3fc11ef9f6488f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":7,"width":497,"height":479},{"panel_id":"b","x":515,"y":8,"width":489,"height":477}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_16.jpg","caption":"Figure 16. Top view of ALD film growth for $\\mathsf{HfO_2}$ after 20 cycles. (A) Migration is removed from the reaction list; a low growth rate and poor quality of film is obtained. (B) Structural relaxation events are considered; a realistic growth rate and dense film are achieved. [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_16","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_16","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_16.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1006,"height":497,"image_format":"jpeg","image_sha256":"98205868072e9006e0bdcf01741602dc6b542dd45cbe6d200735c43d9cc4c7cb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":502,"height":494},{"panel_id":"b","x":509,"y":4,"width":489,"height":483}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_4.jpg","caption":"Figure 4. Steric hindrance between two $\\mathsf{HfX}_3$ from DFT calculation. Steric hindrance leads to a change in the adsorption pattern of the precursors in ALD. Some of the blocked sites are highlighted indicating that they are unable to adsorb the next Hf precursor. $(\\mathsf{Red} = \\mathsf{O},$ White $= \\mathsf{H},$ large grey $= \\mathsf{Hf},$ dark grey $= \\mathsf{C},$ and blue $= \\mathsf{N}$ [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_4","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":611,"height":472,"image_format":"jpeg","image_sha256":"2b91cc1e2d367d286778c38b8be43b23e034d0428d06510eda3da60450a6585d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":4,"width":602,"height":465}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_7.jpg","caption":"Figure 7. A cluster of three $\\mathsf{HfX}_2$ in adjacent cation/cation sites (DFT). The highlighted oxygen atoms are some of those that are blocked with respect to adsorption of another hafnium precursor. The Hf-Hf distance is stretched $(3.9\\mathrm{\\AA})$ to minimize repulsion between the aligned ligands. [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":614,"height":481,"image_format":"jpeg","image_sha256":"5b91d3c1dc3844a9215a84b619ca4836a3713f99f402f3b11b83addeefc1ebf7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":608,"height":475}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_8.jpg","caption":"Figure 8. A cluster of four HfX in adjacent cation/anion sites (DFT). The distance between highlighted hafnium atoms $(3.3\\mathrm{\\AA})$ shows that repulsion between the aligned ligands is less problematic than in the case depicted in Figure 7. [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_8","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":608,"height":483,"image_format":"jpeg","image_sha256":"e1b6b6316a7e13de1989445bfb3c3a4369c0d1f5391d3764485c3c4b8b2ee378","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":0,"width":596,"height":469}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_27_figure_3.jpg","caption":"Figure 3. (a,b) Two cluster models of two neighboring -OH groups on a hydroxylated $\\mathrm{SiO}_2$ surface. The shaded lower part indicates the \"surface\" part of the clusters. (c) 2D periodic model of a hydroxylated $\\alpha$ -quartz (0001) surface.","id":"train/atomic-layer-deposition/simulation-usecase/27/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/27/figure_3","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/Martin Becker et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1117,"height":239,"image_format":"jpeg","image_sha256":"c8e0be451c59000002f869291a30a7cee8387f14434e58b19b8bb4703f0d0dcd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":8,"width":388,"height":409},{"panel_id":"b","x":400,"y":7,"width":320,"height":411},{"panel_id":"c","x":738,"y":24,"width":265,"height":393}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure presents three computational model systems used to study reaction energetics in PEALD: a small Si₂O₇H₆ cluster, a larger Si₈O₁₄H₈ cage-like cluster, and a periodic hydroxylated α-quartz (0001) surface. These models represent increasing levels of structural complexity and serve as representative substrates for simulating precursor reactions and surface chemistry.\"},{\"panel_id\":\"b\",\"text\":\"Figure presents three computational model systems used to study reaction energetics in PEALD: a small Si₂O₇H₆ cluster, a larger Si₈O₁₄H₈ cage-like cluster, and a periodic hydroxylated α-quartz (0001) surface. These models represent increasing levels of structural complexity and serve as representative substrates for simulating precursor reactions and surface chemistry.\"},{\"panel_id\":\"c\",\"text\":\"Figure presents three computational model systems used to study reaction energetics in PEALD: a small Si₂O₇H₆ cluster, a larger Si₈O₁₄H₈ cage-like cluster, and a periodic hydroxylated α-quartz (0001) surface. These models represent increasing levels of structural complexity and serve as representative substrates for simulating precursor reactions and surface chemistry.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Using different structural models allows researchers to capture how precursor and plasma species behave on surfaces with varying complexity. Small clusters help isolate specific reaction mechanisms, while larger clusters and periodic surfaces offer more realistic geometries that better represent the actual substrate. Together, these models provide a balanced approach for understanding reactivity trends, validating computational predictions, and assessing how surface structure influences PEALD film growth behavior.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The hydroxylated α-quartz (0001) surface model.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Size and number of atoms, Degree of structural complexity (cluster vs. cage vs. periodic surface), Presence and distribution of surface –OH groups, Dimensionality (finite cluster vs. extended crystal surface)\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_27_figure_5.jpg","caption":"Figure 5. Simulated structures of PEALD-deposited $\\mathrm{SiO_2}$ with different occupation probabilities $p_{\\mathrm{P1}}$ and $p_{\\mathrm{P2}}$ .","id":"train/atomic-layer-deposition/simulation-usecase/27/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/27/figure_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/Martin Becker et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1006,"height":420,"image_format":"jpeg","image_sha256":"fb52d33c3a7e83ec10a173550404cecb9b1c208be4e6c3e8ee4139bfd1e515c1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1006,"height":420}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure presents simulated atomic structures of PEALD-grown SiO₂ generated using different occupation probabilities for the precursor-derived surface species P1 and P2 (pP1 and pP2). These variations in occupation probability lead to distinct network structures, illustrating how different reaction pathways influence the final atomic arrangement of the deposited SiO₂ film.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The simulated structures demonstrate how different reaction-pathway occupation probabilities influence the atomic arrangement of the final SiO₂ film. By adjusting pP1 and pP2, researchers can examine how precursor chemistry, ligand exchange, and plasma-driven reactions modify the network topology. These structural insights are important for predicting material properties such as density, uniformity, porosity, and defect incorporation, ultimately helping optimize PEALD process parameters to achieve high-quality SiO₂ films.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The occupation probabilities pP1 and pP2.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Distribution of Si–O–Si linkages, Local atomic arrangement and connectivity, Density of network motifs derived from P1 and P2 pathways, Degree of structural heterogeneity, Overall topology of the deposited SiO₂ film\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_28_fig_9.jpg","caption":"Fig. 9. Examples of bridged structures of surface sites.","id":"train/atomic-layer-deposition/simulation-usecase/28/fig_9","sample_id":"atomic-layer-deposition/simulation-usecase/28/fig_9","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/Maxim Deminsky et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":761,"height":381,"image_format":"jpeg","image_sha256":"91d35a3b7f07bb80c2a5d3c73cb523566f6826bea583f58c210c5ead643a50fd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":32,"y":55,"width":336,"height":105},{"panel_id":"b","x":425,"y":0,"width":336,"height":160},{"panel_id":"c","x":17,"y":218,"width":333,"height":163},{"panel_id":"d","x":400,"y":220,"width":329,"height":161}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_1.jpg","caption":"Figure 1. Top view of the unit cell of $\\mathrm{a - SiO}_2$ models (a) A.1 and (b) A.2 used in this study and (c) idealized $\\alpha$ -quartz model Q.1 used previously and most often. The numbers 1-6 denote the oxygen atoms of the surface silanol groups. $\\mathrm{Si - OH}$ groups with the same numbers on both A.1 and A.2 are bound to the same silicon atoms of the underlying $\\mathrm{SiO}_2$ framework. An RBO species is present on A.2. Color code: Si - blue, O - red, H - white. See Figure S1 for a side view of the surface models.","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":672,"height":253,"image_format":"jpeg","image_sha256":"ade183d132a2d02285b5dd894d611fb0e77a3b99166b3bd009f315aefb8ea08b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":7,"width":234,"height":245},{"panel_id":"b","x":238,"y":4,"width":225,"height":250},{"panel_id":"c","x":463,"y":5,"width":209,"height":247}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Top view of the silanol-rich amorphous silica model (A.1) containing six surface silanols (labeled 1–6) at a density of 5.07 silanols per nm².\"},{\"panel_id\":\"b\",\"text\":\"Top view of the silanol-reduced amorphous silica model (A.2) containing four surface silanols (labeled 2, 4, 5, 6) at a density of 3.38 silanols per nm², plus a reactive bridge oxygen (RBO) species.\"},{\"panel_id\":\"c\",\"text\":\"Top view of the idealized α-quartz model (Q.1) containing only two distinguishable geminal silanol species (labeled 1, 2) at a much higher density of 9.34 silanols per nm².\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Figure | Silanols per nm² |\\n| --- | --- |\\n| A.1 | 5.07 |\\n| A.2 | 3.38 |\\n| Q.1 | 9.34 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Amorphous silica better represents experimental conditions and enables qualitatively different chemistry. The lower silanol density and irregular distribution on a-SiO₂ allow TB SMI configurations that cannot form on α-quartz. Additionally, α-quartz contains only geminal silanols with fixed distances, whereas a-SiO₂ features individual silanols with unique chemical environments affecting reactivity.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Both models share the same basic framework and unit cell parameters (a = 1.072 nm, b = 1.104 nm), differing only in silanol density and RBO presence.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Q.1 has 9.34 silanols per nm², which is nearly twice that of A.1 (5.07) and almost three times that of A.2 (3.38).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"RBO (reactive bridge oxygen) is a strained Si−O−Si bond that reacts instantaneously with Al precursors (activation barrier <10 kJ mol⁻¹), making it a major source of unwanted growth nucleation.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_11.jpg","caption":"Figure 11. Overview of the TS geometries of the LER of TEA with the bonds shown in Scheme 3: (a) RBO opening, (b) $\\mathrm{Si}_{\\mathrm{SMI}} - \\mathrm{O}_{\\mathrm{surf}}$ bond disintegration, (c) C-O bond intersection, and (d) methoxy- $\\mathrm{Si}_{\\mathrm{SMI}}$ intersection. The relevant $\\mathrm{Si}_{\\mathrm{SMI}}$ atoms are colored lighter blue.","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_11","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_11","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":663,"height":600,"image_format":"jpeg","image_sha256":"4922d268ea7e331f00fc6a3322a9d97536d32578700b7333759363b8e0fc075b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":10,"width":309,"height":290},{"panel_id":"b","x":348,"y":13,"width":313,"height":282},{"panel_id":"c","x":8,"y":317,"width":314,"height":277},{"panel_id":"d","x":345,"y":315,"width":313,"height":279}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Transition state geometry for RBO opening reaction with TEA, showing the Al precursor attacking the strained Si−O−Si bridge oxygen.\"},{\"panel_id\":\"b\",\"text\":\"Transition state geometry for Si_SMI−O_surf bond disintegration, showing TEA attacking the bond connecting the SMI silicon to the surface oxygen, with a pentavalent Si_SMI intermediate.\"},{\"panel_id\":\"c\",\"text\":\"Transition state geometry for C−O bond intersection at an unreacted methoxy group, where the methyl group transfers from oxygen to the TEA ethyl ligand.\"},{\"panel_id\":\"d\",\"text\":\"Transition state geometry for methoxy−Si_SMI intersection, showing TEA approaching the Si_SMI center to form a pentavalent transition state while displacing the methoxy group.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The lighter blue silicon atom is Si_SMI: the silicon atom from the TMPS inhibitor molecule, as distinguished from the darker blue surface silicon atoms.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Bulkier precursors would experience greater steric repulsion when forming transition states within the SMI layer, further increasing activation barriers through the \\\"reactivity reduction\\\" effect.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Reactions (b) and (d) both involve formation of a pentavalent transition state at the Si_SMI center, which requires significant displacement of the SMI's substituents (propyl and methoxy groups). In a dense blocking layer, this displacement invokes repulsive forces with neighboring SMIs. Reactions (a) and (c) involve smaller structural changes (attacking an RBO or transferring a small methyl group) with lower spatial requirements.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Reaction (b), the Si_SMI−O_surf disintegration, directly breaks the bond anchoring the SMI to the surface, potentially detaching the inhibitor molecule.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_13.jpg","caption":"Figure 13. Reactions within the SMI blocking layer. (a and b) Crosslinking reaction of two adjacent SMIs within the A.1-O:13/56/2/4 configuration in side view for the initial and final states, respectively, of the reaction. (c and d) LER at the cross-linking oxygen with TEA with the initial and final states, respectively. Activation and reaction energies in $\\mathrm{kJ}\\mathrm{mol}^{-1}$ . Dispersion in parenthesis.","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_13","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_13","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":669,"height":606,"image_format":"jpeg","image_sha256":"0d8e1987be8536cdebee13978dadf1202826d9cb441dac1a7502cbda3b677358","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":14,"y":16,"width":312,"height":275},{"panel_id":"b","x":357,"y":14,"width":308,"height":282},{"panel_id":"c","x":11,"y":323,"width":315,"height":279},{"panel_id":"d","x":357,"y":326,"width":308,"height":275}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Initial state of the cross-linking reaction showing two adjacent SMIs within the A.1-O:13/56/2/4 blocking layer configuration (3.4 SMI/nm²). The two SMIs each bear a hydroxyl group (formed from methoxy hydrolysis during water pulse) positioned to undergo a condensation reaction.\"},{\"panel_id\":\"b\",\"text\":\"Final state of the cross-linking reaction where the two SMIs are connected via an Si-O-Si bridge with release of water. The reaction has a moderate activation barrier (ΔE_A = 106 kJ/mol) and is slightly endothermic (ΔE_R = 7 kJ/mol). Values in parentheses show dispersion contributions.\"},{\"panel_id\":\"c\",\"text\":\"Initial state showing TEA (green aluminum atom with ethyl ligands) adsorbed at the cross-linking oxygen that connects two SMIs within the blocking layer.\"},{\"panel_id\":\"d\",\"text\":\"Final state after ligand exchange reaction where TEA has broken the cross-linking Si-O bond. The reaction has an activation barrier of 127 kJ/mol and is nearly thermoneutral (ΔE_R = -1 kJ/mol). The negative dispersion contributions indicate the product is destabilized relative to the reactant.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Cross-linking is an equilibrium reaction dependent on water concentration. During a water pulse, high water concentration shifts the equilibrium toward the reactants (separate hydroxyl-bearing SMIs), breaking any existing cross-links. During the subsequent vacuum or precursor pulse phase, the entropic gain from releasing water shifts the equilibrium toward the cross-linked product. Thus, cross-linked SMI structures are more likely to exist during precursor pulses when they could potentially enhance blocking capacity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The color code is: blue spheres represent silicon atoms, red spheres represent oxygen atoms, gray spheres represent carbon atoms, white spheres represent hydrogen atoms, and green spheres represent aluminum atoms (in TEA).\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No. TEA can break the cross-linking bond with an activation barrier of 127 kJ/mol, and since the reaction is reversible (ΔE_R = -1 kJ/mol), the cross-link reforms after precursor purging. Cross-linking has no net impact on AS-ALD selectivity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TEA attack barrier (127 kJ/mol) is higher than the cross-link formation barrier (106 kJ/mol), but both are within the range accessible under typical ALD conditions at 180°C.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_2.jpg","caption":"Figure 2. Specific adsorption configurations for TMPS on $\\mathrm{a - SiO_2}$ . Panels a and c depict the side and top views, respectively, of the A.2- O:245 configuration. The positions of the bonding silanols are marked, as well as the free $\\mathrm{Si - OH}$ (O6) and the RBO species. Panels b and d depict the side and top views, respectively, of A.1-O:123/56/4. C-bonded H atoms have been omitted for the sake of clarity.","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":663,"height":698,"image_format":"jpeg","image_sha256":"509e35069b95fc3e9a4474b89d9bcb884dd95cc0e5231875849b85b860a6ed3a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":5,"width":325,"height":331},{"panel_id":"b","x":340,"y":2,"width":320,"height":329},{"panel_id":"c","x":3,"y":342,"width":327,"height":348},{"panel_id":"d","x":342,"y":339,"width":320,"height":353}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Side view of the A.2-O:245 configuration showing a triply bonded (TB) TMPS molecule attached to silanol positions O2, O4, and O5 on the A.2 amorphous silica surface. The free silanol at O6 and the reactive bridge oxygen (RBO) species are labeled. The TB configuration requires significant framework distortion due to the large inter-silanol distances on A.2.\"},{\"panel_id\":\"b\",\"text\":\"Side view of the A.1-O:123/56/4 full coverage configuration on the A.1 surface. This shows three SMIs: a TB-TMPS at positions O1, O2, O3; a DB-TMPS at positions O5, O6; and an SB-TMPS at position O4. All six surface silanols are blocked by this arrangement.\"},{\"panel_id\":\"c\",\"text\":\"Top view of the A.2-O:245 configuration, showing the spatial arrangement of the TB-TMPS bonding to three silanols (O2, O4, O5), the free silanol O6, and the RBO beneath the blocking layer.\"},{\"panel_id\":\"d\",\"text\":\"Top view of the A.1-O:123/56/4 configuration, illustrating how three SMIs achieve full silanol coverage on the A.1 surface. The numbered positions show the silanol bonding sites for each SMI.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The A.1-O:123/56/4 configuration provides superior coverage because it blocks all six surface silanols using three SMIs in a combination of TB, DB, and SB bonding modes. In contrast, A.2-O:245 leaves O6 unblocked and retains a reactive RBO species beneath the layer. The unblocked silanol and RBO in A.2-O:245 represent potential nucleation sites for Al precursors, which would reduce AS-ALD selectivity.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The large inter-silanol distances on A.2 prevent formation of stable multiply bonded configurations that would include O6, and the existing TB-TMPS at O2,O4,O5 sterically blocks access to O6 by additional TMPS molecules.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"RBO stands for Reactive Bridge Oxygen, a strained Si-O-Si surface species that forms when two adjacent silanols condense. It is highly reactive toward both Al precursors and water.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The naming convention encodes the surface model and SMI bonding arrangement. \\\"A.1\\\" refers to the silanol-rich amorphous silica model with six surface silanols. The numbers after \\\"O:\\\" indicate which silanol positions each SMI occupies, separated by slashes for different SMI molecules. Thus \\\"123/56/4\\\" means one SMI bonds to O1, O2, and O3 (triply bonded), another bonds to O5 and O6 (doubly bonded), and a third bonds only to O4 (singly bonded).\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_5.jpg","caption":"Figure 5. TMPS reacting with the RBO species on A.2. (a) The initial (PS) and (b) final (SB SMI and methoxy group) state of the reaction are shown. Adsorption, activation, and reaction energies $\\left(\\Delta E_{\\mathrm{ads}}, \\Delta E_{\\mathrm{A}},\\right.$ and $\\left.\\Delta E_{\\mathrm{R}},\\right.$ respectively) in $\\mathrm{kJ} \\mathrm{mol}^{-1}$ .","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":670,"height":280,"image_format":"jpeg","image_sha256":"c13eea895c9285a63b33ccc7fb8271eceabd7fa3bf5887b5ca901238b6259e16","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":12,"width":317,"height":266},{"panel_id":"b","x":358,"y":11,"width":311,"height":268}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Initial precursor state (PS) showing TMPS adsorbed near the reactive bridge oxygen (RBO) on the A.2 amorphous silica surface. The adsorption is strongly exothermic (ΔE_ads = -100 kJ/mol), with dispersion interactions contributing -65 kJ/mol. The RBO is the strained Si-O-Si bridge visible in the surface framework.\"},{\"panel_id\":\"b\",\"text\":\"Final state after the RBO opening reaction, showing two products: a singly bonded (SB) TMPS and a methoxy group directly attached to a surface silicon atom. The reaction has a very low activation barrier (ΔE_A = 26 kJ/mol, with zero dispersion contribution) and is strongly exothermic (ΔE_R = -127 kJ/mol).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Although this reaction removes the highly reactive RBO and forms an SB-SMI, it also creates a methoxy group bonded directly to a surface silicon atom. During the first water pulse, this methoxy group undergoes hydrolysis to form a new free silanol within the blocking layer. If no adjacent SMI substituents shield this silanol, it becomes an accessible nucleation site for Al precursors in subsequent cycles, initiating unwanted Al₂O₃ growth on the non-growth surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The RBO opening barrier (26 kJ/mol) is much lower than the first condensation reaction with surface silanols (TS I = 142 kJ/mol), making RBO opening kinetically highly favorable when TMPS can access the RBO.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Not necessarily. Since surface silanols protrude into the vacuum and can form hydrogen bonds with TMPS methoxy groups, the blocking layer may build up without TMPS reaching the RBOs located closer to the surface. In this case, unreacted RBOs would remain beneath the SMI layer, where they could later react with Al precursors that penetrate the blocking layer, causing selectivity loss.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The values in parentheses indicate the dispersion energy contribution (ΔE_disp) to each energy term, showing how van der Waals interactions contribute to adsorption, activation, and reaction energetics.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_7.jpg","caption":"Figure 7. Top view of the SLM. The blue ellipsoid marks the SMI at position O2 chosen as fragment in the pEDA. Double-pointed arrows indicate the SMI's interactions with the surrounding SMIs within the SLM.","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":611,"height":578,"image_format":"jpeg","image_sha256":"85bc02a6a8e914ff574021f0eca7cbb455532e24e08164f11132c4dffd29ba26","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":3,"width":604,"height":572}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Top view of the SMI Layer Model (SLM) used for pEDA calculations to quantify inter-SMI interactions. The central SMI at position O2 (marked by blue ellipse) is selected as the fragment, and the double-pointed arrows indicate its interactions with neighboring SMIs in the layer. Each SMI shows the characteristic structure with a silicon atom (blue), oxygen atoms (red), carbon atoms (gray), and hydrogen atoms (white). The surface slab has been removed to create the SLM for analyzing SMI-SMI interactions independent of surface effects.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Position O2 was chosen because the SMI there adopts a singly bonded (SB) configuration in all full coverage models studied, ensuring consistent comparison across different SMI layer densities with the same number of unreacted methoxy groups.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The pEDA decomposes the interaction energy between the central SMI and surrounding layer into electronic and dispersion components. At densities up to 3.4 SMI/nm², the overall interaction is attractive (ΔE_int = -36 kJ/mol), with dispersion attraction outweighing electronic repulsion. At 4.2 SMI/nm², however, Pauli repulsion (474 kJ/mol) overwhelms dispersion attraction (-132 kJ/mol), resulting in a net repulsive interaction (+27 kJ/mol) that destabilizes the layer.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The analysis reveals a theoretical upper SMI density limit below 4.2 SMI/nm², set by Pauli repulsion when SMIs become too densely packed for electrons to avoid each other.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The color code is: blue spheres for silicon atoms, red spheres for oxygen atoms, gray spheres for carbon atoms, and white spheres for hydrogen atoms.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_8.jpg","caption":"Figure 8. Two possible configurations of DB-O:13 on A.1 that differ in the orientation of the unreacted groups of TMPS. (a) The conformer can form TB-O:123, because the methoxy group is directly above the O2 silanol (blue circle). (b) The conformer cannot react with O2, and the SMI propyl group screens the Si-OH group from reacting with an additional TMPS molecule (red circle). (c) PS of MTMS with the free O2 silanol of the A.1-O:13/56/4 configuration. (d) Product of MTMS with the Si-OH at O2 of the A.1-O:13/56/4 configuration. The $\\Delta E_{\\mathrm{A}}$ and $\\Delta E_{\\mathrm{R}}$ values are given with respect to the energy of the adsorbate structure $(\\Delta E_{\\mathrm{ads}})$ . Values in parentheses state the dispersion contribution to that respective energy. All energies in kJ $\\mathrm{mol}^{-1}$ .","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_8","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":666,"height":570,"image_format":"jpeg","image_sha256":"ade33ef12d3a90a5a07dd2f7848370ec927e66422716badfc4f3e113f0aeefd5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":4,"width":323,"height":278},{"panel_id":"b","x":352,"y":6,"width":311,"height":274},{"panel_id":"c","x":3,"y":294,"width":327,"height":274},{"panel_id":"d","x":345,"y":294,"width":318,"height":270}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"DB-O:13 conformer on A.1 where the unreacted methoxy group (blue circle) is oriented directly above the O2 silanol. This positioning allows the third condensation to form TB-O:123. The adsorption energy is -44 kJ/mol with -22 kJ/mol dispersion contribution. This conformer is 15 kJ/mol more stable than the one in (b).\"},{\"panel_id\":\"b\",\"text\":\"Alternative DB-O:13 conformer where the propyl tail group (red circle) points toward O2, sterically blocking access. This orientation prevents both TB formation and adsorption of additional TMPS molecules at O2, leaving it as a potential nucleation site for Al precursors.\"},{\"panel_id\":\"c\",\"text\":\"Precursor state showing MTMS (a monofunctional alkoxysilane) adsorbed at the free O2 silanol within the A.1-O:13/56/4 blocking layer configuration. The adsorption energy is -22 kJ/mol, dominated by dispersion (-113 kJ/mol), indicating the electronic contribution is actually unfavorable (+91 kJ/mol).\"},{\"panel_id\":\"d\",\"text\":\"Product state after MTMS condenses with the O2 silanol, blocking the previously exposed site. The reaction has a high activation barrier (ΔE_A = 151 kJ/mol) and is slightly endothermic (ΔE_R = 6 kJ/mol). Values in parentheses show dispersion contributions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Figure | ΔE_ads |\\n| --- | --- |\\n| a) | -44 (-22) |\\n| b) | -29 (-13) |\\n| c) | -22 (-113) |\\n| d) | +151 (-37)
+6 (+20) |\"},{\"panel_id\":\"b\",\"text\":\"| Figure | ΔE_ads |\\n| --- | --- |\\n| a) | -44 (-22) |\\n| b) | -29 (-13) |\\n| c) | -22 (-113) |\\n| d) | +151 (-37)
+6 (+20) |\"},{\"panel_id\":\"c\",\"text\":\"| Figure | ΔE_ads |\\n| --- | --- |\\n| a) | -44 (-22) |\\n| b) | -29 (-13) |\\n| c) | -22 (-113) |\\n| d) | +151 (-37)
+6 (+20) |\"},{\"panel_id\":\"d\",\"text\":\"| Figure | ΔE_ads |\\n| --- | --- |\\n| a) | -44 (-22) |\\n| b) | -29 (-13) |\\n| c) | -22 (-113) |\\n| d) | +151 (-37)
+6 (+20) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The conformational freedom of the DB-SMI allows different orientations of unreacted groups. In favorable conformations like panel (a), the methoxy group points toward nearby silanols enabling further condensation. However, unfavorable conformations like panel (b) orient the propyl tail toward the remaining silanol, sterically blocking it from both TB formation and reaction with additional TMPS molecules. Even though the favorable conformer is more stable by 15 kJ/mol, some fraction of unfavorable conformers will exist, leaving silanols exposed.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"MTMS is smaller than TMPS and can access silanols that are sterically blocked from additional TMPS molecules, allowing complete silanol coverage through sequential pulsing of trifunctional and monofunctional inhibitors.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The MTMS barrier (151 kJ/mol) is slightly higher than the first TMPS condensation (TS I = 142 kJ/mol), suggesting extended soak times may be needed for optimal coverage by the second SMI.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The blue circle in (a) highlights the methoxy group positioned to react with O2, while the red circle in (b) highlights the propyl group that sterically blocks access to the O2 silanol.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_42_fig_2.jpg","caption":"Fig. 2 Ti precursors covering the $\\mathrm{TiO_2(110)}$ surface. In the presence of methoxy groups, the precursor cannot adsorb to one of every three rows of the adsorption sites due to the steric hindrance. (a and b) Those rows are denoted by black arrows. If methoxy groups are replaced with hydroxyl groups, the steric hindrance is alleviated and the precursor can adsorb to every row of the adsorption sites. (c) White, emerald, red, and gray spheres represent hydrogen, carbon, oxygen, and titanium atoms, respectively. Blue lines represent the periodic boundary used in calculations.","id":"train/atomic-layer-deposition/simulation-usecase/42/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/42/fig_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/Yeonchoo Cho et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1109,"height":373,"image_format":"jpeg","image_sha256":"8a0ad393b0c48aa4dcc3b483e6ddee9d3d95cc2f386e3d7fa20149436104c93c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":12,"y":43,"width":399,"height":322},{"panel_id":"b","x":430,"y":46,"width":397,"height":326},{"panel_id":"c","x":846,"y":37,"width":257,"height":331}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_43_figure_4.jpg","caption":"Figure 4. (a) Snapshots of ReaxFF-MD simulations for $\\mathrm{Al}_2\\mathrm{O}_3$ ALD using $\\mathrm{TMA / H_2O}$ sequential doses on a $\\mathrm{GeO_x(5\\AA) / Ge(100)}$ slab at $1000~\\mathrm{K}$ . Duration of each dose was 500 ps. In the snapshot of the first TMA dose, the highlighted molecules (1 and 2) are byproducts of $\\mathrm{CH}_4$ and $\\mathrm{H}_3\\mathrm{C} - \\mathrm{CH}_3$ . (b) ReaxFF-NEB calculation for TMA adsorption on the $\\mathrm{GeO_x / Ge}$ surface. (c) Number of O atoms coordinated to Ge during the ReaxFF-MD simulation of $\\mathrm{Al}_2\\mathrm{O}_3$ ALD on $\\mathrm{GeO_x / Ge}$ .","id":"train/atomic-layer-deposition/simulation-usecase/43/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/43/figure_4","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"reaction energy profile diagram"},{"panel_id":"c","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/Yuanxia Zheng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":617,"height":928,"image_format":"jpeg","image_sha256":"86d31c35cc8f45000dfb5b7dea847bd78e5407bd3bbe236796b8c3c3d9006863","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":19,"y":16,"width":595,"height":618},{"panel_id":"b","x":3,"y":691,"width":320,"height":233},{"panel_id":"c","x":344,"y":684,"width":253,"height":241}],"summarization":"[{\"panel_id\":\"b\",\"text\":\"The graph represents the Energy profile for a computation (ReaxFF-MD) simulations for Al2O3 ALD using TMA/H2O sequential doses on a GeOx(5 Å)/Ge(100) slab at 1000 K, the chemical reaction where a trimethylaluminum (TMA) molecule adsorbs onto a germania (Ge-O-*) surface site, forming an adsorbed Ge-O-Al(CH₃)₂ complex while releasing a methane (CH₄) molecule.\"},{\"panel_id\":\"c\",\"text\":\"This figure is a stacked graph showing the evolution of Germanium (Ge) coordination number (CN) to Oxygen over time during a simulated ALD process. It tracks the structure through two TMA doses and one H₂O dose, showing how the GeOx interface changes as Al₂O₃ deposition proceeds.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Energy [eV] | reaction state |\\n|----------------|--------------------|\\n| 0.0 | Initial State |\\n| -0.1 | Transition state | \\n| -3.02 |Final state |\"},{\"panel_id\":\"c\",\"text\":\"| Time (ns) | Counts (%) | CN |\\n|-----------|------------|-----|\\n| 0 | 13.38 | 1 |\\n| 0 | 10.8 | 2 |\\n| 0 | 17.68 | 3 |\\n| 0 | 48.11 | 4 |\\n| 0 | 9.75 | 5 |\\n| 0.5 | 12.64 | 1 |\\n| 0.5 | 13.69 | 2 |\\n| 0.5 | 37.35 | 3 |\\n| 0.5 | 34.15 | 4 |\\n| 0.5 | 0.1 | 5 |\\n| 1 | 10.86 | 1 |\\n| 1 | 16.5 | 2 |\\n| 1 | 42.39 | 3 |\\n| 1 | 29.11 | 4 |\\n| 1 | 0.1 | 5 |\\n| 1.5 | 10.86 | 1 |\\n| 1.5 | 18.3 | 2 |\\n| 1.5 | 37.35 | 3 |\\n| 1.5 | 32 | 4 |\\n| 1.5 | 0.1 | 5 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"0-0.5 ns: First TMA exposure.\\n\\n0.5-1.0 ns: Second TMA exposure.\\n\\n1.0-1.5 ns: H₂O exposure. The key control parameter is the coordination number (CN) of Ge atoms to O atoms. It monitors the structural evolution of the GeOx interlayer, indicating oxidation state changes and intermixing during ALD.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SiO₂ barrier layer is preferable. Direct ALD on GeOx leads to dynamic intermixing and a broad, unstable GeOx/Al₂O₃ interface with variable Ge oxidation states (CN 1-5), which are potential charge traps. A thin SiO₂ provides a more chemically stable, passivating interface with Ge, preventing this intermixing and resulting in lower interfacial defect density.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the process requires sufficient thermal energy to overcome the ~3 eV barrier, justifying the high simulation temperature of 1000 K used to model the reaction kinetics. However, the exothermic nature confirms the reaction is thermodynamically favorable and will proceed to completion once activated, forming a stable Al-O-Ge linkage that anchors the Al₂O₃ film to the substrate.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thin GeOx layer makes the surface more reactive than a fully oxidized SiO₂ surface. The Ge-O-* bond is weaker than a Si-O-* bond due to germanium's lower electronegativity, making the oxygen more basic and nucleophilic. This likely lowers the initial energy state for the TMA molecule, contributing to a different (potentially lower) overall reaction barrier for the first ALD half-cycle on this surface.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_43_figure_5.jpg","caption":"Figure 5. ReaxFF-MD simulations for oxygen diffusion from $\\mathrm{GeO_x}$ into underlying Ge subsurface for $\\mathrm{GeO_x / Ge(100)}$ (red) and $(\\mathrm{Al}_2\\mathrm{O}_3 / \\mathrm{GeO}_x)$ /Ge(100) (blue) interfaces. Calculations were performed at 800 K to accelerate the oxygen diffusion effect within 2 ns. The portion of oxygen diffusion was normalized by the total number of oxygen atoms in the $\\mathrm{GeO_x}$ layer.","id":"train/atomic-layer-deposition/simulation-usecase/43/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/43/figure_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/Yuanxia Zheng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":566,"height":736,"image_format":"jpeg","image_sha256":"9b7eff2b5afc6812e42e8bcb77fee8e42203b52c3fae48e08a46df982e09d1a2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":31,"y":3,"width":532,"height":207},{"panel_id":"b","x":11,"y":240,"width":551,"height":202},{"panel_id":"c","x":106,"y":456,"width":355,"height":279}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays calculated potential energy profiles (ReaxFF-NEB) for Al₂O₃ ALD surface reactions on Ge(100). Panel (a) shows the reaction of trimethylaluminum (TMA) with a passivated H-terminated surface, exhibiting an energy barrier of 1.41 eV. (not quantitative)\"},{\"panel_id\":\"b\",\"text\":\"Panel (b) shows the thermodynamically unfavorable reaction of water (H₂O) on the same surface. (not quantitative)\"},{\"panel_id\":\"c\",\"text\":\"Panel (c) contrasts this behavior with the reaction on a Ge dangling-bond defect, which proceeds via barrier-less, spontaneous adsorption followed by ligand elimination.The line chart illustrates the percentage of oxygen diffusion over time for two different systems: GeOx/Ge and [Al2O3/GeOx]/Ge.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"| Time (ns) | Oxygen Diffusion (%) | Structure |\\n|-----------|-----------------------|------------|\\n| 0 | 0 | GeOₓ/Ge |\\n| 0 | 0 | [Al₂O₃/GeOₓ]/Ge |\\n| 0.5 | 12.2 | GeOₓ/Ge |\\n| 0.5 | 6.05 |[Al₂O₃/GeOₓ]/Ge |\\n| 1 | 12.3 | GeOₓ/Ge |\\n| 1 | 8.28 | [Al₂O₃/GeOₓ]/Ge |\\n| 1.5 | 18.62 | GeOₓ/Ge |\\n| 1.5 | 10.31 | [Al₂O₃/GeOₓ]/Ge |\\n| 2 | 20.77 | GeOₓ/Ge |\\n| 2 | 10.4 | [Al₂O₃/GeOₓ]/Ge |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Spontaneous adsorption of TMA onto the Ge dangling bond (Ge-*).\\n\\nLigand exchange with a neighboring $Ge-H*$ site to eliminate methane (CH4).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The GeOₓ/Al₂O₃ bilayer provides far better stability by suppressing oxygen exchange. The trade-off is increased process complexity and the risk of introducing new defects at the Al₂O₃/GeOₓ interface during capping layer deposition.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The dense, chemically stable Al₂O₃ capping layer drastically reduces the oxygen diffusion rate. This is because it presents a kinetic barrier that impedes the transport pathways for oxygen atoms, effectively sealing the interface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. By preventing oxygen loss from or ingress into the critical GeOₓ/Ge interface, the Al₂O₃ cap helps maintain stable interface composition and low defect density, which is essential for preserving channel mobility and threshold voltage stability during subsequent thermal steps.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_1.jpg","caption":"Figure 1. Cluster models used to represent reactive sites on the $\\mathrm{SiO_2}$ surface: (a) $\\mathrm{Si(OH)_3 - OH}$ cluster used to represent isolated surface $-\\mathrm{OH}$ groups, (b) $\\mathrm{(SiH_3O)_3Si - OH}$ cluster used to represent isolated surface $-\\mathrm{OH}$ groups, (c) $\\mathrm{Si(OH)_3 - O - Si(OH)_3}$ cluster used to represent adjacent hydrogen-bonded $-\\mathrm{OH}$ groups, and (d) cluster used to represent siloxane bridge sites on the $\\mathrm{SiO_2}$ surface.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":531,"height":398,"image_format":"jpeg","image_sha256":"f2972626b5100a331256a9f8791d0894ad34465112ec2f6c351aacf3325f2e64","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":43,"y":45,"width":132,"height":134},{"panel_id":"b","x":288,"y":8,"width":243,"height":183},{"panel_id":"c","x":0,"y":245,"width":228,"height":137},{"panel_id":"d","x":326,"y":268,"width":205,"height":101}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_11.jpg","caption":"Figure 11. Atomic mechanism of the reaction between $\\mathrm{TiCl_4}$ and oxygen bridge sites: (a) reactant complex, (b) formation of the $\\mathrm{Ti - O}$ bond and a 5-coordinated Ti, (c) breaking of the $\\mathrm{Ti - Cl}$ bond, (d) transition state structure, (e) relaxation of the structure, and (f) product complex.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_11","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_11","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1017,"height":625,"image_format":"jpeg","image_sha256":"004bdd62adfa5ddf1cc28fc9dc1dc5cf301797cbf5deff4d90082e9bdde3c2be","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":13,"y":343,"width":213,"height":262},{"panel_id":"b","x":99,"y":6,"width":209,"height":221},{"panel_id":"c","x":350,"y":26,"width":211,"height":199},{"panel_id":"d","x":439,"y":348,"width":221,"height":220},{"panel_id":"e","x":661,"y":9,"width":218,"height":208},{"panel_id":"f","x":729,"y":334,"width":281,"height":250}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_13.jpg","caption":"Figure 13. Atomic mechanism of the $\\mathrm{H}_2\\mathrm{O} + \\mathrm{SiO}_2 - \\mathrm{Cl}^*$ reaction: (a) adsorbed reactant complex, (b) first transition state structure, (c) reaction intermediate, (d) second transition state structure, and (e) adsorbed product complex.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_13","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_13","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":975,"height":431,"image_format":"jpeg","image_sha256":"79e8ac20b899b7c851e750356e73d0aac72749fb0df90d4c615aa152ca6f9e6d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":240,"width":250,"height":169},{"panel_id":"b","x":188,"y":16,"width":205,"height":171},{"panel_id":"c","x":408,"y":238,"width":216,"height":159},{"panel_id":"d","x":611,"y":1,"width":208,"height":167},{"panel_id":"e","x":783,"y":233,"width":191,"height":184}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_2.jpg","caption":"Figure 2. Atomic mechanism of the reaction between $\\mathrm{TiCl_4}$ and the isolated surface $-\\mathrm{OH}$ group: (a) reactant complex, (b) formation of the $\\mathrm{Ti - O}$ bond and the 5-coordinated $\\mathrm{Ti}$ , (c) transition state structure, (d) formation of the $\\mathrm{H - Cl}$ bond, and (e) product complex.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1036,"height":573,"image_format":"jpeg","image_sha256":"e704e1d8ec9e4699b75b5b7b017ef006d563bc623bf0a48dcdd6b05727b56d65","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":240,"width":228,"height":298},{"panel_id":"b","x":161,"y":7,"width":240,"height":233},{"panel_id":"c","x":360,"y":296,"width":241,"height":239},{"panel_id":"d","x":564,"y":8,"width":229,"height":237},{"panel_id":"e","x":764,"y":272,"width":268,"height":244}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_4.jpg","caption":"Figure 4. Adsorbed complex structures optimized at the B3LYP/6-31G(d,p) level of theory. RC1, RC2, and RC3 are the three different adsorption modes of $\\mathrm{H_2O}$ on the $\\mathrm{SiO_2 - O - Ti(OH)_3^*}$ surface site.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_4","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":669,"height":270,"image_format":"jpeg","image_sha256":"2ec350a9997043c56a3963d9afef48cc29943abfe8b7e9dc80dbc05ec66fc3aa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":6,"width":192,"height":263},{"panel_id":"b","x":248,"y":41,"width":202,"height":230},{"panel_id":"c","x":493,"y":41,"width":176,"height":228}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_7.jpg","caption":"Figure 7. Distorted geometries predicted by using the $\\mathrm{Si(OH)_3 - OH^*}$ cluster.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":669,"height":241,"image_format":"jpeg","image_sha256":"0ac78ab3027127fe4698516a7ccb3f2bb484a76b192c0e15889d6bb19a81a429","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":20,"width":173,"height":204},{"panel_id":"b","x":239,"y":8,"width":176,"height":202},{"panel_id":"c","x":483,"y":0,"width":184,"height":213}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_8.jpg","caption":"Figure 8. Atomic mechanism of the reaction between $\\mathrm{TiCl_4}$ and adjacent hydrogen-bonded hydroxyl groups on the $\\mathrm{SiO_2}$ surface: (a) adsorption on a single hydroxyl group, (b) transition state structure for $\\mathrm{TiCl_4}$ diffusion between the two adsorption states, (c) adsorption on the bridge site, (d) transition state structure, (e) transition state structure, (f) product complex, (g) product complex, (h) surface intermediate after the desorption of $\\mathrm{HCl}$ , (i) transition state structure, (j) product complex, and (k) surface intermediate after the desorption of $\\mathrm{HCl}$ .","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_8","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"},{"panel_id":"h","label":"molecular structure diagram"},{"panel_id":"i","label":"molecular structure diagram"},{"panel_id":"j","label":"molecular structure diagram"},{"panel_id":"k","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1170,"height":827,"image_format":"jpeg","image_sha256":"0a5f177f961de370f81eda17db764f86f2cf73a2de32cf2677d8dd272b836247","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":301,"width":215,"height":225},{"panel_id":"b","x":151,"y":4,"width":204,"height":198},{"panel_id":"c","x":276,"y":288,"width":177,"height":186},{"panel_id":"d","x":456,"y":2,"width":179,"height":196},{"panel_id":"e","x":433,"y":585,"width":190,"height":211},{"panel_id":"f","x":704,"y":3,"width":192,"height":188},{"panel_id":"g","x":704,"y":588,"width":224,"height":202},{"panel_id":"h","x":535,"y":307,"width":169,"height":170},{"panel_id":"i","x":779,"y":303,"width":171,"height":174},{"panel_id":"j","x":960,"y":13,"width":195,"height":166},{"panel_id":"k","x":1007,"y":308,"width":158,"height":166}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_45_fig_1.jpg","caption":"Fig. 1. Perspective views of (a) the optimized BDEAS and (b) a fully OH-terminated Si (0 0 1) surface with the electron density distribution. The Si atom is positively charged and the N and H atoms are negatively charged in BDEAS. The O atom is negatively charged and the H atom is positively charged in $-\\mathrm{OH}$ on the Si (0 0 1) surface.","id":"train/atomic-layer-deposition/simulation-usecase/45/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/45/fig_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/Seung-Bin Baek et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":669,"height":486,"image_format":"jpeg","image_sha256":"56581a158d2ad87cfb7c274641d63762d2688fc05eabba743a9928819462af33","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":144,"y":8,"width":389,"height":205},{"panel_id":"b","x":3,"y":246,"width":668,"height":223}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_49_fig_1.jpg","caption":"Fig. 1 The optimized structures for (a) adsorption state, (b) transition state and (c) reaction state of a $\\mathrm{B}_2\\mathrm{H}_6$ on the TiN (001) surface.","id":"train/atomic-layer-deposition/simulation-usecase/49/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/49/fig_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":886,"height":478,"image_format":"jpeg","image_sha256":"c2c23db180bcdadbc038cbe0f1d8727a573c497843ceb4590e15fc3bfec9f03d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":279,"height":444},{"panel_id":"b","x":284,"y":4,"width":307,"height":447},{"panel_id":"c","x":590,"y":22,"width":290,"height":423}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure shows the adsorption state of the B₂H₆ reaction pathway on a TiN(001) surface, where the molecule is physisorbed at a distance of 3.59 Å.\"},{\"panel_id\":\"b\",\"text\":\"The subfigure illustrates the transition state of the reaction pathway, where the molecule approaches the surface (2.99 Å) to facilitate activation.\"},{\"panel_id\":\"c\",\"text\":\"The subfigure depicts the final reaction state (chemisorption), where the B–B bond has dissociated, and the resulting BH₃ fragments are bonded to the nitrogen atoms of the surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TiN serves as a critical glue or barrier layer for the Atomic Layer Deposition (ALD) of Tungsten (W) in memory devices. The B2H6 precursor acts as a reducing agent in the W ALD process, and its ability to dissociate on the underlying TiN surface directly influences the nucleation density and quality of the subsequent Tungsten film. Understanding these surface-dependent reaction mechanisms is essential for controlling film texture and preventing defects like voids or seams in high-aspect-ratio contacts.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dissociated BH3 species bond to the Nitrogen (N) atoms (represented by the blue spheres) on the surface.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sequence illustrates the dissociative chemisorption mechanism of diborane (B2H6) on a TiN surface. The process initiates with the B2H6 molecule loosely physisorbed above the surface (a), progresses through a transition state where the molecule approaches the surface to lower the activation barrier (b), and concludes with the cleavage of the B–B bond, resulting in two separate BH3 fragments adsorbed on the surface (c).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The vertical distance decreases from 3.59 Å in the adsorption state to 2.99 Å in the transition state.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_49_fig_3.jpg","caption":"Fig. 3 The optimized structures for (a) adsorption state, (b) transition state and (c) reaction state of a $\\mathrm{B}_2\\mathrm{H}_6$ on the Ti-terminated TiN (111) surface.","id":"train/atomic-layer-deposition/simulation-usecase/49/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/49/fig_3","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":664,"height":255,"image_format":"jpeg","image_sha256":"62b812f55f2629867a8cab7aa1cb010f57823918b93cf9287787ea212bd5f39a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":213,"height":225},{"panel_id":"b","x":217,"y":4,"width":230,"height":230},{"panel_id":"c","x":448,"y":6,"width":212,"height":225}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure shows the adsorption state of a diborane (B₂H₆) molecule on a Ti-terminated TiN(111) surface. Unlike on the (001) surface, the molecule interacts strongly with the Titanium atoms (yellow spheres).\"},{\"panel_id\":\"b\",\"text\":\"The subfigure depicts the transition state where the B–B bond is elongated, facilitating the dissociation process.\"},{\"panel_id\":\"c\",\"text\":\"The subfigure illustrates the reaction state (chemisorption), where the B₂H₆ has dissociated into two borane (BH₃) molecules. These BH₃ fragments are adsorbed onto the hollow sites formed by three Titanium atoms.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure illustrates the dissociative chemisorption of diborane. It begins with the adsorption of the B₂H₆ precursor on the Ti-rich surface (a), proceeds through a transition state characterized by B–B bond activation (b), and results in the cleavage of the molecule into two BH₃ fragments that chemically bond to the surface titanium atoms (c).\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dissociated BH₃ molecules adsorb onto the hollow sites formed by three Titanium (Ti) atoms (yellow spheres).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In Figure 1 on the TiN(001) surface, the BH₃ fragments bonded to the Nitrogen atoms. In contrast, on the Ti-terminated TiN(111) surface shown here, the BH₃ fragments preferentially bond to the Titanium atoms (specifically in the 3-fold hollow sites). This difference in binding site contributes to the different reactivities and energies observed between the two crystal orientations.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_49_fig_5.jpg","caption":"Fig. 5 The optimized structures for (a) adsorption state, (b) transition state and (c) reaction state of a $\\mathrm{B}_2\\mathrm{H}_6$ on the N-terminated TiN (111) surface.","id":"train/atomic-layer-deposition/simulation-usecase/49/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/49/fig_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":667,"height":322,"image_format":"jpeg","image_sha256":"37dc9d773478ef502bbd9740b20b29253fa1c3234ab228a3e234787db67b8513","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":5,"width":216,"height":293},{"panel_id":"b","x":224,"y":7,"width":224,"height":290},{"panel_id":"c","x":445,"y":9,"width":220,"height":294}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure shows the adsorption state of a diborane (B2​H6) molecule on an N-terminated TiN(111) surface, interacting at a distance of 3.28 Å.\"},{\"panel_id\":\"b\",\"text\":\"The subfigure depicts the transition state, where the molecule moves closer to the surface (2.45 Å) and the B–B bond begins to stretch.\"},{\"panel_id\":\"c\",\"text\":\"The subfigure illustrates the final reaction state, which is unique compared to other surfaces: the B2​H6 dissociates into surface-bound B​Hx species bonded to Nitrogen atoms, while simultaneously releasing a hydrogen molecule (H2) into the gas phase (seen as the isolated pair of purple spheres).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A hydrogen molecule (H2) represented by the pair of purple spheres floating away from the surface.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They bond to the Nitrogen (N) atoms, represented by the blue spheres in the lattice.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface is considered the most efficient because it facilitates not only the strong adsorption of Boron species (bonding to N) but also the spontaneous removal of hydrogen as H2 gas. This self-cleaning mechanism reduces residual hydrogen content in the film and results in a stable, boron-rich surface that serves as an excellent nucleation layer for the subsequent Tungsten deposition.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The distance decreases from 3.28 Å in the adsorption state to 2.45 Å in the transition state.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_52_fig_1.jpg","caption":"Fig. 1 The optimized initial, transition, final structures for the first dissociative reaction step of $\\mathrm{WF}_6$ on the N-terminated TiN (111) surface.","id":"train/atomic-layer-deposition/simulation-usecase/52/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/52/fig_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1053,"height":506,"image_format":"jpeg","image_sha256":"0d388f65f1653970196db160a5dd5de9f96fc81f2582a3c2d2d6533a489d6eae","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":8,"width":1048,"height":496}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the first dissociation step of WF₆ on a TiN surface. Three structures are shown: initial, transition, and final states. Bond breaking and surface bonding are illustrated using atomic models.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the final state, one fluorine atom is no longer symmetrically coordinated to tungsten. The W–F bond is elongated and broken relative to the initial structure. This shows that fluorine has transferred toward the surface while tungsten binds more strongly.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The transition state (TS).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It decreases.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-It defines the kinetic barrier\\n-It controls reaction rate\\n-It determines temperature requirements\\n-It predicts precursor efficiency\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_52_fig_3.jpg","caption":"Fig. 3 The optimized initial, transition, final structures for the first dissociative reaction step of $\\mathsf{WF}_6$ on the B-covered N-terminated TiN (111) surface.","id":"train/atomic-layer-deposition/simulation-usecase/52/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/52/fig_3","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1033,"height":475,"image_format":"jpeg","image_sha256":"2f56f5e1d8d07c2867596553139ce8e0ec1a07a0358c01e1ce27414913247b76","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":10,"width":1032,"height":459}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the optimized atomic structures corresponding to the initial state (IS), transition state (TS), and final state (FS) of the first dissociative reaction step of WF₆ on a B-covered, N-terminated TiN (111) surface. The structures illustrate how the presence of surface boron modifies the interaction between the WF₆ molecule and the substrate during bond dissociation. Annotated distances highlight changes in adsorption geometry and bond activation along the reaction pathway.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Boron atoms on the N-terminated TiN surface alter the local chemical environment by changing available adsorption sites and electronic interactions. During the dissociative adsorption of WF₆, boron affects how the molecule approaches the surface and how W–F bonds are activated. This modification can influence both the geometry of the transition state and the stabilization of reaction intermediates.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The transition state (TS).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the initial state, WF₆ interacts weakly with the surface and remains relatively distant, indicating physisorption or weak chemisorption. In the final state, at least one fluorine atom has dissociated and stronger bonding between tungsten and surface atoms is observed. This change reflects a transition from molecular adsorption to chemically bound reaction products influenced by boron coverage.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Surface modifiers like boron can tune precursor reactivity.\\n-They may suppress or promote bond breaking during deposition.\\n-Understanding this helps control film composition and impurity incorporation.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_52_fig_5.jpg","caption":"Fig. 5 W adatom diffusion from atop (IS) to sub-layer (FS): (a) top and side views of W adatom on B-covered N-terminated TiN (111) surfaces. (b) Energy profile.","id":"train/atomic-layer-deposition/simulation-usecase/52/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/52/fig_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1198,"height":539,"image_format":"jpeg","image_sha256":"fe238612267ee06e9ae2877e447c6c5548365ef8bbab981bae9927b7b23bdc35","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":699,"height":500},{"panel_id":"b","x":732,"y":129,"width":461,"height":331}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows top and side views of a W adatom diffusing from an atop surface site (IS) into a sub-layer position (FS) on a B-covered, N-terminated TiN (111) surface. The atomic configurations illustrate the structural rearrangement associated with subsurface incorporation.\"},{\"panel_id\":\"b\",\"text\":\"The figure presents a schematic energy profile along the W diffusion pathway, highlighting the transition state, activation barrier, and the strong energetic stabilization of the sub-layer final state relative to the initial surface configuration.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The initial configuration shows the W adatom adsorbed at an atop surface site, interacting primarily with surface atoms. In the final configuration, the W atom occupies a subsurface position beneath the top layer, indicating successful diffusion. The comparison of top and side views highlights both lateral displacement and vertical incorporation during the diffusion process.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- It affects metal incorporation depth and interface formation.\\n- It influences film density and microstructural evolution.\\n- It can impact electrical and mechanical properties of the deposited film.\\n- It provides insight into long-term diffusion-driven stability or degradation.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 0.43 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The final sub-layer state is significantly more stable than the initial surface state, as indicated by the large negative reaction energy. This strong energetic driving force suggests that once the activation barrier is overcome, subsurface incorporation of W is thermodynamically favored.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_10.jpg","caption":"Figure 10. BP86/SV(P) optimized geometries of bound reactants, transition state, and bound products structures for $\\mathrm{SiH}_2\\mathrm{DMA}_2$ with (a) $(\\mathrm{Si}_3\\mathrm{N}_4)_4(\\mathrm{NH}_3)_12$ as a model for silicon nitride growth and (b) $(\\mathrm{Si}_3\\mathrm{N}_4)_4(\\mathrm{H}_2\\mathrm{O})_{12}$ as a model for silicon oxide growth.","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_10","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":666,"height":480,"image_format":"jpeg","image_sha256":"9912bcbe2d89d2f29d388edd09a83459b948d419f6d3ce368f2b4e8f5a7a2152","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":20,"y":6,"width":639,"height":251},{"panel_id":"b","x":22,"y":274,"width":639,"height":203}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_12.jpg","caption":"Figure 12. Structures of chemisorbed $\\mathrm{SiH}_2\\mathrm{DMA}_2$ product (UP) on (a) $(\\mathrm{Si}_3\\mathrm{N}_4)_4(\\mathrm{H}_2\\mathrm{O})_{12}$ and (b) $(\\mathrm{Si}_3\\mathrm{N}_4)_4(\\mathrm{NH}_3)_{12}$ clusters.","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_12","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":461,"height":508,"image_format":"jpeg","image_sha256":"45946068dd2ee11dcd40dc866c9a6f8aa5b784cf28666e9b7f384a8e47b5d089","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":73,"y":7,"width":383,"height":253},{"panel_id":"b","x":9,"y":265,"width":448,"height":239}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_5.jpg","caption":"Figure 5. Molecular structures of some of the silicon precursors considered in this work. Structures were optimized using BP86/ TZVPP. The silicon atoms are represented by yellow spheres, carbon by gray, hydrogen by white, nitrogen by dark blue, oxygen by red, chlorine by green, and fluorine by light blue.","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":578,"height":764,"image_format":"jpeg","image_sha256":"f15e454d3eb6deca284597e06661733ebe867a24ba477fc5590cc1f4ace68172","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":575,"height":762}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image displays molecular structures of various silicon precursors\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Figure | Structure |\\n| --- | --- |\\n| a | SiH₂(NH₂)₂ |\\n| b | SiH₂(OH)₂ |\\n| c | SiH₄ |\\n| d | SiH₂Cl₂ |\\n| e | SiH₂(CH₃)₂ |\\n| f | SiH₂DMA₂ |\\n| g | SiH₂HFMA₂ |\\n| h | DIPAS |\\n| i | SiH₂EMA₂ |\\n| j | BDEAS |\\n| k | BTBAS |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. SiH2Cl2\\n2. SiH2HFMA2\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiH2EMA2, BDEAS, BTBAS and DIPAS are commercially available amino-silane precursors that could be potentially used in the ALD of SiO2 and Si3N4\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The molecules SiH2(NH2)2, SiH2DMA2 and SiH2HFMA2 were selected as model amino-silanes in order to observe the effect of changing R′ and R″ on the alkylamide functional groups\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The molecular structures for a selection of silicon precursors and the molecules (SiH2(NH2)2 and SiH2(OH)2 respectively) employed to model the silicon nitride and oxide surfaces were optimized using BP86/TZVPP\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_7.jpg","caption":"Figure 7. DFT-optimized structures of the transition states for the reactions of $\\mathrm{SiH}_2(\\mathrm{NH}_2)_2$ and $\\mathrm{SiH}_2\\mathrm{DMA}_2$ silicon precursors with $\\mathrm{SiH}_3\\mathrm{-NH - SiH}_3,$ $\\mathrm{SiH}_3\\mathrm{-NH}_2,$ and $\\mathrm{SiH}_3\\mathrm{-OH}$ surface models. The silicon atoms are represented by yellow spheres, hydrogen by white, nitrogen by blue, oxygen by red, and carbon by gray. The bonds of the 4-membered ring transition state are highlighted in yellow.","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":553,"height":422,"image_format":"jpeg","image_sha256":"5c4c48d844788084353b18f54db03ba7ee3265f2adb1c07f7dbd928b5b22303b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":547,"height":417}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image displays various molecular structures of the transition states for the reactions of SiH2(NH2)2 and SiH2DMA2 silicon precursors with SiH3−NH−SiH3, SiH3−NH2, and SiH3−OH surface models\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Precursor | Si₃–NH–Si₃ Surface | Si₃–NH₂ Surface | Si₃–OH Surface |\\n|-------------------|----------------------|-------------------|-----------------|\\n| SiH₂(NH₂)₂ | Present | Present | Present |\\n| SiH₂DMA₂ | Present | Present | Present |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For these transition states a planar, “kite”-shaped 4-membered ring is found between the O/N and H of the surface model molecule and the N and Si of the incoming precursors.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. The silicon atoms are represented by yellow spheres\\n2. Hydrogen atoms are white\\n3. Nitrogen atoms are marked in blue\\n4. Oxygen atoms are red\\n5. Carbon is gray\\n6. The bonds of the 4-membered ring transition state are highlighted in yellow.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Although the precursors may approach SiH3−OH vertically to form a transition state, a side-on approach of the precursors is necessary for the SiH3−NH2 due to the orientation of the amine hydrogen atoms. This seems to reflect the direction of the lone pair on O and N, respectively\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_9.jpg","caption":"Figure 9. $(\\mathrm{Si}_3\\mathrm{N}_4)_4$ cluster model (upper center) with $\\mathrm{NH}_2 / \\mathrm{H}$ terminated $(\\mathrm{Si}_3\\mathrm{N}_4)_4(\\mathrm{NH}_3)_12$ cluster (lower left) and $\\mathrm{OH} / \\mathrm{H}$ terminated $(\\mathrm{Si}_3\\mathrm{N}_4)_4(\\mathrm{H}_2\\mathrm{O})_{12}$ cluster (lower right).","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_9","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":661,"height":500,"image_format":"jpeg","image_sha256":"b23dfb5b58c8b7df37c574e26708d21d37f3b71c517f680aefa801bc674100f3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":658,"height":497}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image depicts the moleculat structure of various cluster models, Si3​N4​)4​ cluster model with NH2/HNH2​/H terminated (Si3N4)4(NH3)12(Si3​N4​)4​(NH3​)1​2 cluster (lower left) and OH/HOH/H terminated (Si3N4)4(H2O)12(Si3​N4​)4​(H2​O)12​ cluster (lower right).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Base Structure | Modification Added | Resulting Structure Formula |\\n|---------------------|--------------------------|--------------------------------------|\\n| (Si₃N₄)₄ | + 12 × NH₂ + 12 × H⁺ | (Si₃N₄)₄(NH₃)₁₂ |\\n| (Si₃N₄)₄ | + 12 × OH⁻ + 12 × H⁺ | (Si₃N₄)₄(H₂O)₁₂ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The geometries of both (Si3N4)4(H2O)12 and (Si3N4)4(NH3)12 clusters were optimized using the BP86 DFT functional and SV(P) basis set\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A cylindrical silicon nitride cluster consisting of 4 Si3N4 stoichiometric units (Si12N16 with 28 atoms) was constructed based on the chemically stable, β-phase crystal structure with hexagonal symmetry.18 To this bare cluster were added 12 NH2 − anions and 12 H+ cations, terminating the uncoordinated Si and N atoms, respectively, on the outside of the cluster. This had the effect of adding 12 NH3 molecules to the cluster, retaining the neutral charge of the cluster. This (Si3N4)4(NH3)12 cluster (Si12N16H12(NH2)12 with 76 atoms)was used to model ALD reactions of silicon precursors at a Si3N4 surface\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The model used for reactions at a silicon oxide surface was constructed with 12 OH− and 12 H+ fragments (i.e., 12 H2O molecules) were added to the Si12N16 cluster resulting in a (Si3N4)4(H2O)12 cluster (Si12N16H12(OH)12 with 64 atoms)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_14.jpg","caption":"Figure 14. The effect of temperature on the migration of $-\\mathrm{OH}$ on the $\\mathrm{Al}_2\\mathrm{O}_3$ surfaces: (a) starting surface, (b) surface after the MD simulation at $300^{\\circ}\\mathrm{C}$ for $500\\mathrm{ps}$ and (c) surface after the MD simulation at $150^{\\circ}\\mathrm{C}$ for $500\\mathrm{ps}$ .","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_14","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_14","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":630,"height":617,"image_format":"jpeg","image_sha256":"7919a758fc398c48f71cd9a37ad97252756ddfd58a617fa6cced304f7aded5bb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":11,"y":34,"width":618,"height":187},{"panel_id":"b","x":4,"y":261,"width":624,"height":165},{"panel_id":"c","x":4,"y":449,"width":623,"height":162}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows the initial Al₂O₃ surface with –OH groups before simulation. Most –OH groups are located near the surface. The structure is compact and ordered.\"},{\"panel_id\":\"b\",\"text\":\"The image shows the surface after MD simulation at 300 °C for 500 ps. Several –OH groups appear displaced along the surface. The surface looks more rearranged.\"},{\"panel_id\":\"c\",\"text\":\"The image shows the surface after MD simulation at 150 °C for 500 ps. –OH movement is more limited. The structure remains closer to the initial state.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It shows the starting configuration of the hydroxylated Al₂O₃ surface before any thermal simulation is applied.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It appears more ordered, resembling the initial state more closely.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Compared to the starting surface, the 300 °C snapshot shows a more disordered arrangement of surface atoms and hydroxyl groups. The arrows highlight specific –OH species that have migrated significantly from their original positions, indicating that the higher thermal energy has overcome energy barriers for surface diffusion and rearrangement.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Greater at 300 °C.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_56_ad18a71f7bf8dfd010afc39c6588160d3abeabbd3d0579c72e4d575a2b72ad6d.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/56/ad18a71f7bf8dfd010afc39c6588160d3abeabbd3d0579c72e4d575a2b72ad6d","sample_id":"atomic-layer-deposition/simulation-usecase/56/ad18a71f7bf8dfd010afc39c6588160d3abeabbd3d0579c72e4d575a2b72ad6d","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/ad18a71f7bf8dfd010afc39c6588160d3abeabbd3d0579c72e4d575a2b72ad6d.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/ad18a71f7bf8dfd010afc39c6588160d3abeabbd3d0579c72e4d575a2b72ad6d.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/Bo Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"not_found"},"width":681,"height":369,"image_format":"jpeg","image_sha256":"ab2e0b8cbd18afca53c38c296bd3e6a68687714f93e7a7f20c0990ea983bc8fc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":7,"width":672,"height":360}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_56_figure_1.jpg","caption":"Figure 1. Optimized structure of the hydroxylated $\\mathrm{SiO}_2(001)$ surface: a) side view, b) top view.","id":"train/atomic-layer-deposition/simulation-usecase/56/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/56/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/Bo Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":361,"height":483,"image_format":"jpeg","image_sha256":"6b2134e49d1917f8785e8109437ddfd9cba24cc4f159f2347b0f8e0a3afecf06","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":8,"width":354,"height":123},{"panel_id":"b","x":4,"y":178,"width":352,"height":273}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_56_figure_2.jpg","caption":"Figure 2. (a) Optimized structure of BTBAS. (b) Charge density of the BTBAS molecule.","id":"train/atomic-layer-deposition/simulation-usecase/56/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/56/figure_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/Bo Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":911,"height":345,"image_format":"jpeg","image_sha256":"8e154111b791e66e7b72495a3b07da8fbbdfd2dd4f1134bc39c436385c9a7f6c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":82,"y":42,"width":262,"height":303},{"panel_id":"b","x":437,"y":8,"width":471,"height":333}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_56_figure_5.jpg","caption":"Figure 5. Optimized initial, transition, and final structures of the dissociative chemisorption of step 2 of BTBAS chemisorption for (a) path a and (b) path b. The green balls represent the migrating H atom.","id":"train/atomic-layer-deposition/simulation-usecase/56/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/56/figure_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/Bo Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":675,"height":361,"image_format":"jpeg","image_sha256":"22d51438775130686d666ede321cb2ae885f361127ed358c52f6dbfbc7ca7d08","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":23,"y":18,"width":651,"height":174},{"panel_id":"b","x":20,"y":208,"width":653,"height":152}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_56_figure_8.jpg","caption":"Figure 8. Optimized initial, transition, and final structures of the sequential surface oxidation steps along path b: (a) step 1, (b) step 2.","id":"train/atomic-layer-deposition/simulation-usecase/56/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/56/figure_8","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/Bo Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":678,"height":377,"image_format":"jpeg","image_sha256":"eee01353e9babccd974ef34710e3064b29d73f648b7fb66852bbf60bf0719b81","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":18,"y":15,"width":657,"height":168},{"panel_id":"b","x":7,"y":199,"width":670,"height":177}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_57_figure_1.jpg","caption":"Figure 1. Top and side view representations of the clusters: black, gallum; orange, sulfur; gray, carbon; blue, nitrogen; white, hydrogen; green, hydrogen atom saturators $(Z_{\\mathrm{H}})$","id":"train/atomic-layer-deposition/simulation-usecase/57/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/57/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/C. Goehry et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1409,"height":536,"image_format":"jpeg","image_sha256":"9b4877fced5926c39433d572b5334e623cd66a3967ec90225aeed83346cc560f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":1398,"height":537}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_57_figure_7.jpg","caption":"Figure 7. Detail of the D06 intermediate. Atoms are represented in black (gallium), orange (sulfur), and white (hydrogen). The thiol group bound to adsorbed Ga center is oriented toward other surface thiol groups and not perpendicular to the surface.","id":"train/atomic-layer-deposition/simulation-usecase/57/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/57/figure_7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/C. Goehry et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":330,"height":206,"image_format":"jpeg","image_sha256":"1fa56367d58b46ed3a190adcb22fa07a42af397403e23c7e0fb85be46428b568","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":326,"height":205}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_b8962f195f2705366d924a9db291df51a90a6fddc60d55997caaefafaf49ec70.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/8/b8962f195f2705366d924a9db291df51a90a6fddc60d55997caaefafaf49ec70","sample_id":"atomic-layer-deposition/simulation-usecase/8/b8962f195f2705366d924a9db291df51a90a6fddc60d55997caaefafaf49ec70","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/b8962f195f2705366d924a9db291df51a90a6fddc60d55997caaefafaf49ec70.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/b8962f195f2705366d924a9db291df51a90a6fddc60d55997caaefafaf49ec70.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"not_found"},"width":614,"height":300,"image_format":"jpeg","image_sha256":"1068f2d98f54579f8d43a3fc07b3086c67b7023775e85902a0143c2856c62334","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":613,"height":299}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_1.jpg","caption":"Figure 1. Two-dimensional approximation of the lattice network of kMC used here to illustrate the reaction network on the lattice framework. The actual lattice is 3D, and the first neighbors of a given site i share only one neighbor in common instead of two as is depicted here. The lattice is subject to periodic boundary conditions. The metal and oxygen sites alternate in the lattice (metal sites are colored by light gray, oxygen sites with red). Each zinc and oxygen site is four-coordinated in a tetrahedral configuration. Each site is defined by its location in the lattice, type, cn, and neighbor list. The cn is shown below each lattice box. The bottom row in the figure is the bulk-phase (Zn with cn 4). The bulk is inert, i.e., no process is defined for sites with cn 4. Initially, the surface is covered with low-coordinated hydroxyl groups. Above the surface is the gas phase that is initially filled with vacant (VAC) lattice sites. As the deposition process continues, the simulation produces a crystalline $\\mathrm{ZnO}$ lattice with some lattice defects.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":444,"height":272,"image_format":"jpeg","image_sha256":"4b920b6607966831882c12988f7d76988b466dd70db4cf922043a2a32ecda4b2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":439,"height":266}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_14.jpg","caption":"Figure 14. Side profile from the thin film deposited at temperatures 27 and $152^{\\circ}\\mathrm{C}$ . From the simulated trajectories, the amount of ethyl- ligands persisting in the film is large even at high temperatures. This creates defects into the film as the ethyl-ligands mask some of the neighboring sites and lead to impurities within the grown film. In reality, the ethyl-ligands are not likely to stay as ethyl-ligands within the substructure of the film but convert to other by-products or impurities.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_14","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_14","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":672,"height":266,"image_format":"jpeg","image_sha256":"4c39e9bf39201a5cd4be614b295d6b9107e3beb217b54777a1273c279d0f0615","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":342,"y":8,"width":329,"height":259},{"panel_id":"a","x":3,"y":101,"width":331,"height":166}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_2.jpg","caption":"Figure 2. Lattce model ilustration for the adsorption of DEZ onto a hydroxyl group in eq 9. DEZ adsorption invokes the mask function, which decreases the cn of the neighboring zinc and oxygen sites by $-10$ The mask function allows tracking how many DEZ/MEZ groups are within the vicint of a given site, and an oxygen site may be rendered inaccessible to DEZ adsorption if surrounded by too many ligands. See section Steric Hindrance and Densification for further details.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":850,"height":206,"image_format":"jpeg","image_sha256":"9e4c29760b8922a09fc168bb64821d68f75ba6b679e2783866707082de527341","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":847,"height":204}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_3.jpg","caption":"Figure 3. Illustration of the ligand elimination reaction between an adsorbed DEZ and a neighboring hydroxyl group.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_3","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":847,"height":206,"image_format":"jpeg","image_sha256":"e1f2967dab7fbf4cf3df25eb9fbcd1ae28018d6f5d571f03230e11aec82e8599","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":843,"height":200}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_4.jpg","caption":"Figure 4. Densification of $\\mathrm{ZnX}$ group from the oxygen sublattice to the zinc sublattice. The $\\mathrm{ZnX}$ group has a choice between the two vacant sites denoted by VAC.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_4","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":847,"height":736,"image_format":"jpeg","image_sha256":"b267124900d16916fdc0a17f3aa008724ef29280c877eff1c953e799c08b1227","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":1,"y":514,"width":842,"height":222},{"panel_id":"b","x":3,"y":258,"width":844,"height":246},{"panel_id":"a","x":1,"y":2,"width":844,"height":246}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_5.jpg","caption":"Figure 5. Example case of the process leading to ethyl-saturation during the DEZ pulse and the use of the mask function. (a) DEZ adsorbs to an oxygen site close to the MEZ. (b) DEZ reacts with a surface oxygen site. One of the ethyl-ligands is removed, resulting in another MEZ species on the surface. (c) New MEZ needs to densify to the zinc sublattice. However, because of the presence of another $\\mathrm{ZnX}$ group, the new MEZ has a choice of two possible vacant sites. The barrier to the vacant site with $\\mathrm{cn} - 10$ is lower than that for the vacant site with $\\mathrm{cn} - 20$ , and hence, the MEZ prefers the site with $\\mathrm{cn} - 10$ and prefers to distance itself from the other MEZ group.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":847,"height":206,"image_format":"jpeg","image_sha256":"fdb73a691ce8d37e4ea487d668e2b033245b66d40d187348b900f20db10ca6f7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":5,"width":843,"height":199}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_7.jpg","caption":"Figure 7. Illustration of the $\\mathrm{ZnO}$ surface from above during the initial ALD cycle at elevated temperature. The size of simulation box in this figure is one-quarter of the simulation box used in the production simulations. (a) Initial configuration, water covered zinc oxide surface and (b) surface after DEZ saturation. Surface is covered with MEZ. The effect of the mask function can be seen here, as the ethyl-ligands tend to avoid one another when densifying to the zinc sublattice. Some of the MEZ remain nondensified. (c) Surface shortly after the beginning of the water pulse. Several ethyl-ligands have already been eliminated. (d) Surface after the water pulse. Some MEZ remain on the surface even after the water pulse, and these ligand fragments are called persistent ligands.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":672,"height":750,"image_format":"jpeg","image_sha256":"402f9ddb817c5ac203593b5e8f2e78b4024535631427bba7829099bcb2b689aa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":36,"y":31,"width":274,"height":343},{"panel_id":"b","x":302,"y":16,"width":369,"height":360},{"panel_id":"c","x":38,"y":397,"width":249,"height":353},{"panel_id":"d","x":384,"y":397,"width":239,"height":353}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_8.jpg","caption":"Figure 8. Side view of the $\\mathrm{ZnO}$ surface during the initial ALD cycle. The labels $(\\mathsf{a} - \\mathsf{d})$ correspond to the same stages of the initial ALD cycle as in Figure 7. The formation of the new atomic layer can be clearly seen. After the water pulse, some ethyl-ligands remain on the surface and are not eliminated within the ALD cycle.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_8","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":622,"height":289,"image_format":"jpeg","image_sha256":"08ad77ee5200125ba62ae20f238fc076254a717f65d49ee69b302bae0e65a968","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":328,"y":29,"width":294,"height":120},{"panel_id":"b","x":9,"y":181,"width":288,"height":108},{"panel_id":"c","x":11,"y":57,"width":284,"height":92},{"panel_id":"d","x":328,"y":197,"width":284,"height":92}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_9_figure_1.jpg","caption":"Figure 1. Cubic cell of hafnia deposited on the $\\mathrm{Si / SiO_2}$ substrate functionalized with hydroxyl groups.","id":"train/atomic-layer-deposition/simulation-usecase/9/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/9/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/A. Dkhissi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":605,"height":545,"image_format":"jpeg","image_sha256":"87a30430069724f090cf78fc5e69a58bf35d7c39174cdcf159ed0d82f3fb0521","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":601,"height":540}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a hafnia (HfO₂) unit attached to a hydroxylated Si/SiO₂ surface. Surface hydroxyl groups act as bonding sites where hafnium atoms attach through oxygen atoms. This creates Hf–O–Si linkages at the interface between the substrate and the oxide film. The structure represents an early stage of HfO₂ nucleation during atomic layer deposition and explains how bonding starts at the surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1) Provide reactive bonding sites\\n, 2) Enable Hf–O bond formation\\n, 3) Anchor the first hafnia units to the surface\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Hf–O–Si bonds connect the hafnia film directly to the silicon oxide surface. These bonds improve adhesion and reduce weak or broken bonds at the interface. A stable interface helps prevent charge traps that can affect device performance.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Reduces interface defects\\n, -Improves electrical stability\\n, -Helps control leakage current\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The structure shows hafnium atoms bonding to surface oxygen atoms from hydroxyl groups. This creates stable Hf–O links that hold the first oxide units in place. Once these initial bonds form, further ALD cycles can build the film layer by layer. This explains how growth starts uniformly at the surface.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_9_figure_3.jpg","caption":"Figure 3. Noncrystalline $-\\mathrm{O} - \\mathrm{HfCl}_3$ groups chemisorbed on the hydroxylated $\\mathrm{Si / SiO_2}$ . This is the KMC model structure","id":"train/atomic-layer-deposition/simulation-usecase/9/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/9/figure_3","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/A. Dkhissi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":570,"height":434,"image_format":"jpeg","image_sha256":"7fd97fcc8e1026c8718c8e3355d2d5f57e6c1598882ec0fea734df22775c4e98","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":567,"height":428}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a KMC model structure where noncrystalline –O–HfCl₃ groups are attached to a hydroxylated Si/SiO₂ surface. The silicon substrate forms the base, while oxygen atoms link the surface to a hafnium center. Three chlorine atoms remain bonded to hafnium, showing incomplete ligand removal. The structure is irregular and does not form a repeating pattern, which represents the early stage of chemisorption before the film becomes dense or ordered during further ALD or ALE cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Hydroxyl groups on the surface act as reactive sites. They allow the hafnium center to form strong Hf–O bonds after chlorine ligands are partly replaced. This reaction anchors the metal species to the surface and starts the growth process for the oxide film.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Irregular atom spacing\\n, -No repeating unit\\n, -Uneven bonding angles\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Because the bonding is uneven, some areas react faster than others. This can cause a short delay before steady growth begins. As more cycles occur, the surface becomes more uniform and growth stabilizes.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_42_figure_7.jpg","caption":"Figure 7. Possible four-center transition states for (a) TMA with $\\mathrm{AlF}_3$ ; (b) TMA with $\\mathrm{ZrF}_4$ ; (c) DMAC with $\\mathrm{ZrF}_4$ ; and (d) $\\mathrm{SiCl}_4$ with $\\mathrm{ZrF}_4$ .","id":"train/atomic-layer-etching/experimental-usecase/42/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/42/figure_7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/Selectivity in Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":672,"height":756,"image_format":"jpeg","image_sha256":"efc95fe218ca233262cb7fcca5cbf80452498ee75a147de136c4cf08c1a9f28f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":295,"height":359},{"panel_id":"b","x":378,"y":0,"width":293,"height":372},{"panel_id":"c","x":1,"y":396,"width":293,"height":353},{"panel_id":"d","x":359,"y":392,"width":308,"height":357}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_13_fig_2.jpg","caption":"FIG. 2. Schematic of the cell used for molecular dynamics simulations. The filled circles represent Cl atoms and the open circles represent Si atoms.","id":"train/atomic-layer-etching/simulation-usecase/13/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/13/fig_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/Molecular dynamics simulation of atomic layer etching of silicon.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":675,"height":325,"image_format":"jpeg","image_sha256":"79ed13b32418f8eb45dd26371871e0376478275398cb6b95277d08f515cd7676","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":6,"width":666,"height":322}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_2_fig_1.jpg","caption":"Fig. 1. Electron density difference plots after a) the adsorption of an $\\mathbb{F}_2$ molecule on top of an S atom and b) the adsorption of an F atom on top of an S atom of $\\mathrm{MoS_2}$ . Red lobules correspond to regions of charge accumulation $(+0.01$ contour) whereas blue lobules correspond to charge depletion regions $(-0.01$ contour).","id":"train/atomic-layer-etching/simulation-usecase/2/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/2/fig_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/Ab-initio molecular dynamics simulations of the reactivity of MoS2 towards F2 molecules.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":328,"height":639,"image_format":"jpeg","image_sha256":"2f1b6a3d04a252b6b3722bc067f9a7e45bf337105806c02ab3aa3a13c6752d62","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":43,"width":328,"height":266},{"panel_id":"b","x":0,"y":416,"width":328,"height":223}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_2_fig_3.jpg","caption":"Fig. 3. a) Initial surface structures containing 6 $\\mathrm{SF}_x$ groups in the unit cells; b) Energy profiles for each structure at 100, 300 K, and 500 K; c) Snapshot after 15 ps for the simulation starting for the structure initially having 6 $\\mathrm{SF}_3$ groups.","id":"train/atomic-layer-etching/simulation-usecase/2/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/2/fig_3","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"multi spectra chart"},{"panel_id":"e","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/Ab-initio molecular dynamics simulations of the reactivity of MoS2 towards F2 molecules.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":636,"height":1005,"image_format":"jpeg","image_sha256":"d7fb06052a41270ea9165d793cfeac13ab4acd859732efeea3f01665328b2ebc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":197,"height":190},{"panel_id":"b","x":234,"y":4,"width":193,"height":183},{"panel_id":"c","x":463,"y":4,"width":171,"height":186},{"panel_id":"d","x":44,"y":259,"width":592,"height":424},{"panel_id":"e","x":87,"y":686,"width":471,"height":318}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_2_fig_4.jpg","caption":"Fig. 4. Trajectories of F atoms on the surface plane show the dynamics of the different surface groups as a function of temperature. The $\\mathrm{MoS_2}$ unit cells contain a) six SF groups, b) six $\\mathrm{SF_2}$ groups and c) six $\\mathrm{SF_3}$ groups.","id":"train/atomic-layer-etching/simulation-usecase/2/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/2/fig_4","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/Ab-initio molecular dynamics simulations of the reactivity of MoS2 towards F2 molecules.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1270,"height":1119,"image_format":"jpeg","image_sha256":"8c60e96c7cbeccb8617c2ad65401c85f122d5bf1ec2641b0e1a08c2078969112","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":1270,"height":398},{"panel_id":"b","x":8,"y":406,"width":1250,"height":361},{"panel_id":"c","x":8,"y":762,"width":1261,"height":344}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_2_fig_6.jpg","caption":"Fig. 6. a) Snapshots of AIMD simulation at $1000\\mathrm{K}$ starting from a surface composition having 1 SF group, $10\\mathrm{SF}_2$ groups, and $1\\mathrm{SF}_3$ group in the unit cell. A desorbed $\\mathrm{SF}_3$ species begins to abstract an F atom at $1.715\\mathrm{ps}$ to yield an $\\mathrm{SF}_4$ molecule at $1.922\\mathrm{ps}$ . b) Total energy profile (black curve) and averaged profile (red curve) for better appreciation of energy changes.","id":"train/atomic-layer-etching/simulation-usecase/2/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/2/fig_6","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/Ab-initio molecular dynamics simulations of the reactivity of MoS2 towards F2 molecules.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":650,"height":1511,"image_format":"jpeg","image_sha256":"2766f1c40fc391da59d44e24d11ae2574143556cdd74a86bec510c31011c5f6a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":643,"height":1024},{"panel_id":"b","x":6,"y":1038,"width":643,"height":464}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_2_fig_7.jpg","caption":"Fig. 7. a) Snapshots of AIMD simulation at $1500\\mathrm{K}$ started with the final structure reached after 5 ps at $1000\\mathrm{K}$ (Fig. 6). b) Total energy (black curve) and smoothed profile (red curve).","id":"train/atomic-layer-etching/simulation-usecase/2/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/2/fig_7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/Ab-initio molecular dynamics simulations of the reactivity of MoS2 towards F2 molecules.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":644,"height":1361,"image_format":"jpeg","image_sha256":"d140d129894bada6728d62b74aec850077d5b78d269e4f05fb81b0c41c208053","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"e","x":6,"y":919,"width":631,"height":432},{"panel_id":"a","x":4,"y":3,"width":638,"height":875}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_2_fig_9.jpg","caption":"Fig. 9. a) Snapshot of MD simulation (5 ps) for $\\mathrm{MoS_2}$ bilayer at $1500~\\mathrm{K}$ . There are 12F atoms on the top layer and 12F atoms in the interlayer region. The top layer has a pit defect (3 S and 1 Mo vacancies). b) Trajectories of Mo and F atoms during 10 ps of simulation time within the interlayer region. c) Snapshots showing the release of $\\mathrm{SF_2}$ (and later conversion to $\\mathrm{SF_3}$ and $\\mathrm{SF_4}$ ) in the interlayer region. Note the continuous separation of the layers. d) Variation of total energy during the simulation. The black arrows indicate desorption processes from the top layer towards the gas phase, whereas the red arrows indicate the time of appearance $\\mathrm{SF_x}$ species within the interlayer region.","id":"train/atomic-layer-etching/simulation-usecase/2/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/2/fig_9","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/Ab-initio molecular dynamics simulations of the reactivity of MoS2 towards F2 molecules.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":580,"height":1653,"image_format":"jpeg","image_sha256":"fd3c300a85759f1f75e2e7771216acb5a86c62903cbae494ab2478a145987f13","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":5,"width":564,"height":353},{"panel_id":"b","x":1,"y":384,"width":573,"height":379},{"panel_id":"c","x":5,"y":770,"width":570,"height":471},{"panel_id":"g","x":8,"y":1254,"width":567,"height":395}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_1.jpg","caption":"Figure 1. (a) Equilibrium bulk geometry of rutile $\\mathrm{TiO}_2$ . (b) Relaxed surface slab of $\\mathrm{TiO}_2(110)$ . Ti and O atoms are displayed in cyan and red, respectively.","id":"train/atomic-layer-etching/simulation-usecase/20/figure_1","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":427,"height":847,"image_format":"jpeg","image_sha256":"8a5b74ff4ad66636f6b2affb5617af33c08214bf0d033d6c3185bda99d1143c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":89,"y":30,"width":282,"height":275},{"panel_id":"b","x":9,"y":398,"width":418,"height":449}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_26_fig_2.jpg","caption":"FIG. 2. Si substrates after Cl deposition MD simulations. (a) Crystalline Si substrate model with a (100) top surface at $300~\\mathrm{K}$ after it was exposed to $0.1\\mathrm{eVCl}$ atoms with an atomic dose of $0.94\\times 10^{15}\\mathrm{cm}^{-2}$ in MD simulation. (b) Depth profiles of atomic densities corresponding to (a). (c) Crystalline Si substrate model with a (100) top surface at $300\\mathrm{K}$ after it was exposed to $20\\mathrm{eVCl^{+}}$ ions with an ion dose of $9.4\\times 10^{15}\\mathrm{cm}^{-2}$ in MD simulation. (d) Depth profiles of atomic densities corresponding to (c). In both (a) and (c), the angle of incidence of the impinging ions was normal to the initial (100) Si surface. The depth is measured from the position of the top (100) surface of the initial Si substrate prior to the deposition of Cl. The atomic density was obtained as a moving average with an interval of $3\\mathrm{\\AA}$ as a function of the depth. The Cl adsorption conditions for (a) and (c) are called the \"thin Cl layer deposition\" and \"thick Cl layer adsorption\" in this article.","id":"train/atomic-layer-etching/simulation-usecase/26/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/26/fig_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/Surface damage formation during atomic layer etching of silicon with chlorine adsorption.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":628,"height":972,"image_format":"jpeg","image_sha256":"86ed42a6c5c34175832272b30ebde9f367a69cbf725b3d54415addc4e2b433b6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":28,"width":306,"height":288},{"panel_id":"b","x":362,"y":0,"width":266,"height":410},{"panel_id":"c","x":0,"y":499,"width":310,"height":368},{"panel_id":"d","x":348,"y":489,"width":280,"height":438}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_26_fig_6.jpg","caption":"FIG. 6. Atomic configurations and the corresponding atomic-density depth profiles at the end of the first ALE cycle (C1) with the thin Cl layer deposition and $20\\mathrm{eV}\\mathrm{Ar^{+}}$ ion bombardment. The other conditions are the same as those in Table I. The gray, red, and blue spheres represent Si, Cl, and Ar atoms, respectively. The depth profile was obtained in the same way as in Fig. 2.","id":"train/atomic-layer-etching/simulation-usecase/26/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/26/fig_6","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/Surface damage formation during atomic layer etching of silicon with chlorine adsorption.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":628,"height":444,"image_format":"jpeg","image_sha256":"7b6da11efb59feae056ed33db2c31e0f40eea750b12aa9f7205b8b0a32ed9a07","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":4,"width":364,"height":423},{"panel_id":"b","x":367,"y":7,"width":257,"height":437}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure depicts a molecular structure diagram with atoms represented as spheres. Different atoms are distinguished by color: Si (gray), Cl (red), and Ar+ (blue).\"},{\"panel_id\":\"b\",\"text\":\"The figure shows a line chart with depth on the y-axis and atomic density on the x-axis, displaying the density profiles of Si, Cl, and Ar+ corresponding to the layer highlighted in the image a\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Depth (nm) | Si Atomic Density (×10^23/cm³) | Cl Atomic Density (×10^23/cm³) | Ar Atomic Density (×10^23/cm³) |\\n|-----------|---------------------------------|---------------------------------|--------------------------------|\\n| 0.0 | 0.50 | 0.05 | 0.02 |\\n| -0.5 | 0.48 | 0.03 | 0.015 |\\n| -1.0 | 0.45 | 0.01 | 0.005 |\\n| -1.5 | 0.43 | ~0 | ~0 |\\n| -2.0 | 0.42 | ~0 | ~0 |\\n| -2.5 | 0.41 | ~0 | ~0 |\\n| -3.0 | 0.40 | ~0 | ~0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To characterize the damage formation, the thickness of the damaged-layer was measured from the depth profile, which is 1.5 nm from the surface\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A thickness of 1.5nm correspond to 11 Si monolayers.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Cl density disappears after 1 nm depth and Ar also disappears after 1nm indicating that at 20 eV Ar+ only influences the surface of Si and does not affect the bulk nor penetrate deeper\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_2.jpg","caption":"Fig. 2. Plan view atomistic structures of the bulk phase: (a) $2\\times 2\\times 1$ supercell of expanded alpha- $\\mathrm{Al_2O_3}$ , $\\mathrm{Al_{48}O_{72}}$ , (b) amorphous $\\mathrm{Al_{48}O_{72}}$ after melt-quenching using AIMD simulation, and (c) amorphous $\\mathrm{Al_{48}O_{72}}$ after geometry optimization by DFT.","id":"train/atomic-layer-etching/simulation-usecase/29/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":909,"height":439,"image_format":"jpeg","image_sha256":"ccd0b1adfe62eb25205183121ee70a4892965ae312d056df705431bc63c76638","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":38,"width":275,"height":399},{"panel_id":"b","x":289,"y":42,"width":323,"height":391},{"panel_id":"c","x":653,"y":39,"width":253,"height":399}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_5.jpg","caption":"Fig. 5. Planar views of the $\\mathsf{a - Al_2O_3}$ substrate models used to simulate the fluorination reaction by HF, terminated with (a) $-\\mathrm{OH}$ , (b) $-\\mathrm{CH_3}$ , (c) $-\\mathrm{AlF}$ , (d) $-\\mathrm{AlF_2}$ , and (e) $-\\mathrm{AlF_3}$ .","id":"train/atomic-layer-etching/simulation-usecase/29/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1217,"height":391,"image_format":"jpeg","image_sha256":"39d69f59376f04645ebe40db57039f3701275a3275dedf97a8973a7d2ab653bb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":12,"y":25,"width":223,"height":327},{"panel_id":"b","x":261,"y":25,"width":224,"height":327},{"panel_id":"c","x":508,"y":24,"width":223,"height":367},{"panel_id":"d","x":751,"y":26,"width":222,"height":339},{"panel_id":"e","x":991,"y":26,"width":226,"height":346}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_31_figure_2.jpg","caption":"Figure 2. Structures of the $\\mathrm{Ni}(\\mathrm{II})$ and $\\mathrm{Cu(I)}$ complexes considered. Only the formates are shown. Respective formamidinates can be found by replacing oxygen atoms with secondary amine groups. The relative stabilities are shown in Figure 3. The dimer and tetramer structures are found to be the most stable for formate and formamidinate complexes, respectively. Oligomers are not investigated for $\\mathrm{Cu}$ (see page 9).","id":"train/atomic-layer-etching/simulation-usecase/31/figure_2","sample_id":"atomic-layer-etching/simulation-usecase/31/figure_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"},{"panel_id":"h","label":"molecular structure diagram"},{"panel_id":"i","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/Thermodynamics of Atomic Layer Etching Chemistry on Copper and Nickel Surfaces from First Principles.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":850,"height":797,"image_format":"jpeg","image_sha256":"b93d4ae9029ef8567557d98e7b953744ebe1c3ec9cc1035fe56990955cf2334f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":40,"y":1,"width":199,"height":189},{"panel_id":"b","x":324,"y":11,"width":197,"height":177},{"panel_id":"c","x":595,"y":6,"width":241,"height":182},{"panel_id":"d","x":80,"y":243,"width":122,"height":230},{"panel_id":"e","x":345,"y":241,"width":147,"height":234},{"panel_id":"f","x":608,"y":224,"width":214,"height":246},{"panel_id":"g","x":11,"y":510,"width":256,"height":283},{"panel_id":"h","x":292,"y":510,"width":256,"height":283},{"panel_id":"i","x":577,"y":511,"width":272,"height":281}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic diagram of a Ni(II) formate monodentate monomer, showing a single oxygen atom coordinating to the nickel center.\"},{\"panel_id\":\"b\",\"text\":\"Schematic diagram of a Ni(II) formate bidentate planar monomer, where the formate ligand binds through two oxygen atoms in a planar coordination geometry.\"},{\"panel_id\":\"c\",\"text\":\"Schematic diagram of a Ni(II) formate bidentate tetrahedral monomer, illustrating a non-planar coordination environment around the nickel center.\"},{\"panel_id\":\"d\",\"text\":\"Schematic diagram of a Cu(I) formate dimer, showing two copper atoms bridged by formate ligands confirming a dimeric coordination structure.\"},{\"panel_id\":\"e\",\"text\":\"Schematic diagram of a Ni(II) formate dimer, depicting two nickel centers connected through shared formate ligands.\"},{\"panel_id\":\"f\",\"text\":\"Schematic diagram of a Ni(II) formate trimer, consisting of three nickel atoms linked in a cyclic oligomeric arrangement.\"},{\"panel_id\":\"g\",\"text\":\"Schematic diagram of Ni(II) tetramer structure #1, showing a four-nickel oligomer coordinated by multiple formate ligands.\"},{\"panel_id\":\"h\",\"text\":\"Schematic diagram of Ni(II) tetramer structure #2, presenting an alternative four-nickel coordination topology distinct from tetramer #1.\"},{\"panel_id\":\"i\",\"text\":\"Schematic diagram of Ni(II) tetramer structure #3, illustrating a third distinct tetrameric coordination arrangement of nickel and formate ligands.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"According to the figure caption, the dimer structure is found to be the most stable configuration for metal formate complexes. Understanding this stability is crucial for predicting how these precursors will behave during the volatilization and surface reaction steps of an ALD process. It suggests that the precursor likely exists in this bridged form rather than as an isolated monomer under experimental conditions.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The monodentate monomer coordinates through a single oxygen atom of the formate ligand rather than two.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Three nickel atoms (Ni Trimer).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It's coordinated by two oxygen atoms from each formate ligand in a flat, square-planar-like arrangement.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_32_fig_1.jpg","caption":"FIG. 1. The eight initial configurations of $\\mathrm{BCl}_3$ molecule considered here to find its most stable geometry when it adsorbed on $\\mathrm{Al}_2\\mathrm{O}_3(100)$ . The values shown in parentheses indicate their respective adsorption energies (unit: $\\mathrm{Kcal / mol}$ ) obtained after geometric optimization. The oxygen, aluminum, boron, and chlorine atoms are shown in red, violet (dark and light grays in black and white, respectively), bronze, and green, respectively.","id":"train/atomic-layer-etching/simulation-usecase/32/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/32/fig_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/Understanding time-resolved processes in atomic-layer etching of ultra-thin Al2O3 film.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":641,"height":606,"image_format":"jpeg","image_sha256":"cd093c97be128df465796d19dd03631231e2340097e1c98b11fb5465b1ca6b6f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":17,"width":340,"height":588},{"panel_id":"b","x":350,"y":5,"width":289,"height":581}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Optimized geometries for four BCl3 adsorption starting configurations where the B atom is at hollow sites: Oh EC, Ah EC, Oh TR, and Ah TR. Each configuration is labeled with its adsorption energy in kcal/mol, all close to about minus 32 kcal/mol.\"},{\"panel_id\":\"b\",\"text\":\"Optimized geometries for four BCl3 adsorption starting configurations where the B atom is on top sites: At TR, Ot TR, At EC, and Ot EC. Adsorption energies span from about minus 15 to minus 59 kcal/mol, with Ot TR being the most stable (most negative) case.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Figure | Description |\\n| --- | --- |\\n| a | Left molecular structure diagram with labeled atoms and bonds. |\\n| b | Right molecular structure diagram with labeled atoms and bonds. |\"},{\"panel_id\":\"b\",\"text\":\"| Figure | Description |\\n| --- | --- |\\n| a | Left molecular structure diagram with labeled atoms and bonds. |\\n| b | Right molecular structure diagram with labeled atoms and bonds. |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Red is oxygen, Violet is aluminum, Bronze is boron, Green is chlorine\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"They combine two choices. First is the initial B position: on top of O (Ot), on top of Al (At), hollow site above second layer O (Oh), or hollow site above second layer Al (Ah). Second is the Cl arrangement in the top view: EC (eclipse) or TR (trans).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The most stable configuration is Ot TR, with an adsorption energy of minus 58.986 kcal/mol. In this paper’s naming, Ot means the B atom of BCl3 starts on top of an oxygen atom in the uppermost Al2O3 layer, and TR means the trans arrangement in the top view definition used by the authors. The fact that this value is the most negative among the eight indicates the strongest adsorption among the tested starting geometries.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ot TR (minus 58.986) and Ot EC (minus 45.617) are much more negative than At TR (minus 17.574) and At EC (minus 15.347). This suggests that, among the tested on top starting sites, adsorption is far more favorable when B is on top of an oxygen site than on top of an aluminum site.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_32_fig_2.jpg","caption":"FIG. 2. The atomic electron population changes (a) and bond electron population changes (b) of $\\mathrm{BCl}_3 + \\mathrm{Al}_2\\mathrm{O}_3(100)$ system upon the $\\mathrm{BCl}_3$ adsorption (unit: electron charge). The oxygen, aluminum, boron, and chlorine atoms are shown in red, violet, bronze, and green, respectively.","id":"train/atomic-layer-etching/simulation-usecase/32/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/32/fig_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/Understanding time-resolved processes in atomic-layer etching of ultra-thin Al2O3 film.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":642,"height":803,"image_format":"jpeg","image_sha256":"284d39c29948258780acaa2015478425124673237de0d1af36c4255ea35c7031","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":8,"width":642,"height":378},{"panel_id":"b","x":0,"y":425,"width":630,"height":378}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Mulliken atomic electron population changes for the most stable BCl3 adsorption configuration on Al2O3(100). Numbers on atoms show the change in electron population upon adsorption (unit: electron charge), with the largest decrease on B (minus 0.246) and notable increases on the two Al atoms bonded to Cl.\"},{\"panel_id\":\"b\",\"text\":\"Mulliken bond electron population changes upon BCl3 adsorption. Positive values indicate increased bond electron population on specific contacts such as B to Oads and Cl to Alads, while negative values indicate decreased bond electron population, including weakened bonds between Oads and neighboring Al atoms.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Atoms | Bond Lengths |\\n|---|---|\\n| Green | 0.059*, -0.025*, -0.019* |\\n| Purple | 0.148*, 0.009, -0.011, 0.008 |\\n| Red | 0.010, -0.059*, -0.001, -0.013 |\"},{\"panel_id\":\"b\",\"text\":\"| Atoms | Bond Lengths |\\n|---|---|\\n| Green | -0.49*, 0.807*, -0.713*, 0.930* |\\n| Purple | 0.762*, -0.327*, -0.201*, -0.338* |\\n| Red | -0.040, -0.048, 0.000, 0.052 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Positive means that atom’s electron population increases upon BCl3 adsorption. Negative means it decreases.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The boron atom shows the largest decrease, with a change of about minus 0.246 electron charge.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. A bond between B and the adsorption site oxygen (Oads).\\n2. Bonds between Cl and the two adsorption site aluminum atoms (Alads).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The bond population analysis indicates that bonds between Oads and its adjacent Al atoms are substantially weakened upon BCl3 adsorption. At the same time, new B to Oads and Cl to Alads bonds are formed, creating OBCl and AlCl containing moieties at the surface. This combination motivates the authors’ inference that Al associated fragments such as OAlCl (or AlCl) can detach readily under Ar bombardment at early etching stages.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_32_fig_4.jpg","caption":"FIG. 4. Three different routes for the etching of $\\mathrm{Al}_2\\mathrm{O}_3$ film, i.e., route 1 (a), route 2 (b), and route 3 (c) where the numbers in the figures indicate their respective etching event sequence. Routes 1 and 2 are for ALET processes while route 3 is for conventional plasma etching process.","id":"train/atomic-layer-etching/simulation-usecase/32/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/32/fig_4","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/Understanding time-resolved processes in atomic-layer etching of ultra-thin Al2O3 film.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":989,"height":216,"image_format":"jpeg","image_sha256":"c719b0833bdbe7cf73c26df3e03f0c3fde81559925fd6a7028baef63b52c5c62","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":329,"height":207},{"panel_id":"b","x":332,"y":4,"width":326,"height":207},{"panel_id":"c","x":664,"y":5,"width":320,"height":205}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Route 1 for ALET, showing a sequential etching pathway where Al associated and B associated surface fragments form and detach in the order indicated by the numbered dashed regions. The paper describes this route as sequential detachment of OAlCl, then OBCl, then OAlCl.\"},{\"panel_id\":\"b\",\"text\":\"Route 2 for ALET, showing an alternative event sequence (numbers in dashed regions) that includes breaking an OAlCl unit into AlCl and O before later OBCl related removal. The paper describes this route as AlCl, then O, then OBCl, then AlCl, then O.\"},{\"panel_id\":\"c\",\"text\":\"Route 3 for conventional plasma etching of pristine Al2O3, where etching is represented as sequential removal steps involving Al and O atoms in the order labeled by the numbers.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They mark the local reaction site for each etching event, and the numbers give the order of the etching events along that route.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The authors show that changing the order of elementary removal events changes the reaction energetics, especially the maximum reaction energy along a route. In ALET, BCl3 adsorption enables pathways where Al associated moieties can detach early, reducing the energetic requirement compared with etching pristine Al2O3. They also note that if the sequence is altered so O associated moieties detach first, the maximum energy can rise to a level comparable to conventional plasma etching.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Route 1 (panel a) is ALET.\\n2. Route 2 (panel b) is ALET.\\n3. Route 3 (panel c) is conventional plasma etching.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Route 2 includes a step where an OAlCl related structure is treated as breaking into AlCl and O, so AlCl and O appear as separate early events, unlike route 1 where OAlCl is considered as a single detaching unit.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_2c2282f7df6bd2791472996a05fb543334eb45faa350135fb0cae6407836ca72.jpg","caption":"(d)","id":"train/atomic-layer-etching/simulation-usecase/33/2c2282f7df6bd2791472996a05fb543334eb45faa350135fb0cae6407836ca72","sample_id":"atomic-layer-etching/simulation-usecase/33/2c2282f7df6bd2791472996a05fb543334eb45faa350135fb0cae6407836ca72","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/2c2282f7df6bd2791472996a05fb543334eb45faa350135fb0cae6407836ca72.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/2c2282f7df6bd2791472996a05fb543334eb45faa350135fb0cae6407836ca72.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":306,"height":303,"image_format":"jpeg","image_sha256":"84ebe546fa2159728a1554fb08b4ccf688f46895b4e129e0d4b8f2dea07a5a9a","metadata_license":"MIT for repository metadata where applicable; 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(a) Comparison of the DFT and NNP energies along the NNP MD trajectory for the crystalline slab after the primitive training and (b) the etched surface after the NNP MD simulation. (b)","id":"train/atomic-layer-etching/simulation-usecase/33/figure_3","sample_id":"atomic-layer-etching/simulation-usecase/33/figure_3","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":200,"height":283,"image_format":"jpeg","image_sha256":"3c505a063051dd8ad501c26c6731ddfa1b2df64d0b19f270ee1d6a65737e3ada","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":200,"height":283}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_figure_8.jpg","caption":"Figure 8. (a–f) The etched surfaces of $\\mathrm{a - Si_3N_4}$ with regard to the angle of incidence $(\\theta_{\\mathrm{in}})$ of HF: $\\theta_{\\mathrm{in}} = 0, 15, 30, 45, 60$ and $75^{\\circ}$ , respectively. The kinetic energy of the HF molecule is $50~\\mathrm{eV}$ . The initial height of the surface before etching is noted as a dashed horizontal line.","id":"train/atomic-layer-etching/simulation-usecase/33/figure_8","sample_id":"atomic-layer-etching/simulation-usecase/33/figure_8","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":903,"height":328,"image_format":"jpeg","image_sha256":"af1732f6e416d6fec937ad9a4ee9386dbe8bb1846188bf7d23b7ccba38385925","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":903,"height":328}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_35_435b0c42ea89c8d2de2dcaea88e499aa20a402f2b076777162ac90d4a10d1a1c.jpg","caption":"","id":"train/atomic-layer-etching/simulation-usecase/35/435b0c42ea89c8d2de2dcaea88e499aa20a402f2b076777162ac90d4a10d1a1c","sample_id":"atomic-layer-etching/simulation-usecase/35/435b0c42ea89c8d2de2dcaea88e499aa20a402f2b076777162ac90d4a10d1a1c","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/435b0c42ea89c8d2de2dcaea88e499aa20a402f2b076777162ac90d4a10d1a1c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/435b0c42ea89c8d2de2dcaea88e499aa20a402f2b076777162ac90d4a10d1a1c.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/Density Functional Theory Study of Oxygen Adsorption on Polymer Surfaces for Atomic-Layer.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"not_found"},"width":669,"height":322,"image_format":"jpeg","image_sha256":"854667c75d9d0d16438f26ba30b34b4af9487f67b44cec464c2e05a273cae1c0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":4,"width":227,"height":314},{"panel_id":"b","x":238,"y":7,"width":430,"height":314}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_35_FIG2.jpg","caption":"Figure 2. Lateral and front views of the PS surface model used in the calculations. Brown spheres represent carbon atoms, and white spheres represent hydrogen atoms.","id":"train/atomic-layer-etching/simulation-usecase/35/FIG2","sample_id":"atomic-layer-etching/simulation-usecase/35/FIG2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/Density Functional Theory Study of Oxygen Adsorption on Polymer Surfaces for Atomic-Layer.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":908,"height":522,"image_format":"jpeg","image_sha256":"38133536bb01f610934b20781af8d985035c1c97cc11345dd2b916fc1ca249d4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":5,"width":549,"height":517},{"panel_id":"b","x":1,"y":5,"width":549,"height":517},{"panel_id":"c","x":496,"y":270,"width":385,"height":248}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This panel shows a dense, three-dimensional molecular model of bulk polystyrene. Many polymer chains are packed together, forming an entangled network. Individual chains are hard to distinguish at this scale.\"},{\"panel_id\":\"b\",\"text\":\"A local segment of the polystyrene network is highlighted and isolated from the bulk. This extracted region represents a single chain portion without surrounding crowding. The backbone and side groups are more clearly visible.\"},{\"panel_id\":\"c\",\"text\":\"The isolated chain segment is shown as a simplified ribbon-style structure. The polymer backbone and phenyl side groups are retained, but the representation is cleaner and more ordered. This view focuses on chain geometry rather than bulk packing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The bulk structure is very dense and visually complex. Extracting a local segment removes interference from neighboring chains. This allows the intrinsic chain geometry to be examined clearly. It also makes later structural or reaction analysis more practical.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The overall chain conformation and backbone geometry.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ribbon model is isolated and ordered, unlike the crowded bulk network.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It helps focus on the specific bonds and functional groups most likely to react under given conditions. By removing bulk packing effects, it becomes easier to attribute changes to local chemistry rather than crowding. This can guide hypotheses about reaction pathways relevant to surface treatment or plasma exposure.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_35_FIG3.jpg","caption":"","id":"train/atomic-layer-etching/simulation-usecase/35/FIG3","sample_id":"atomic-layer-etching/simulation-usecase/35/FIG3","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"},{"panel_id":"h","label":"molecular structure diagram"},{"panel_id":"i","label":"molecular structure diagram"},{"panel_id":"j","label":"molecular structure diagram"},{"panel_id":"k","label":"molecular structure diagram"},{"panel_id":"l","label":"molecular structure diagram"},{"panel_id":"m","label":"molecular structure diagram"},{"panel_id":"n","label":"molecular structure diagram"},{"panel_id":"o","label":"molecular structure diagram"},{"panel_id":"p","label":"molecular structure diagram"},{"panel_id":"q","label":"molecular structure diagram"},{"panel_id":"r","label":"molecular structure diagram"},{"panel_id":"s","label":"molecular structure diagram"},{"panel_id":"t","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/Density Functional Theory Study of Oxygen Adsorption on Polymer Surfaces for Atomic-Layer.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"not_found"},"width":946,"height":810,"image_format":"jpeg","image_sha256":"7df8c3095df679c707e5e91813d665c22706f8aa649f65d3ae674e50df137165","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":22,"y":9,"width":164,"height":163},{"panel_id":"b","x":215,"y":9,"width":167,"height":170},{"panel_id":"c","x":403,"y":6,"width":163,"height":172},{"panel_id":"d","x":572,"y":9,"width":156,"height":168},{"panel_id":"e","x":764,"y":9,"width":150,"height":163},{"panel_id":"f","x":31,"y":215,"width":159,"height":212},{"panel_id":"g","x":215,"y":220,"width":165,"height":213},{"panel_id":"h","x":401,"y":220,"width":158,"height":209},{"panel_id":"i","x":578,"y":220,"width":159,"height":209},{"panel_id":"j","x":772,"y":220,"width":161,"height":206},{"panel_id":"k","x":35,"y":448,"width":146,"height":130},{"panel_id":"l","x":220,"y":453,"width":142,"height":126},{"panel_id":"m","x":412,"y":445,"width":154,"height":132},{"panel_id":"n","x":592,"y":451,"width":151,"height":131},{"panel_id":"o","x":764,"y":451,"width":157,"height":135},{"panel_id":"p","x":28,"y":610,"width":163,"height":188},{"panel_id":"q","x":214,"y":610,"width":161,"height":188},{"panel_id":"r","x":404,"y":617,"width":159,"height":181},{"panel_id":"s","x":589,"y":613,"width":160,"height":185},{"panel_id":"t","x":773,"y":615,"width":150,"height":177}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The structure shows the intact molecular backbone with a single oxygen added at an isolated site. The overall geometry remains unchanged.\"},{\"panel_id\":\"b\",\"text\":\"A second oxygen binds near the first site, causing a small local rearrangement but no global distortion.\"},{\"panel_id\":\"c\",\"text\":\"Additional oxygen appears on a neighboring group, slightly increasing local strain while preserving the backbone.\"},{\"panel_id\":\"d\",\"text\":\"Oxygen functionalization expands across adjacent positions. The structure is still mostly rigid.\"},{\"panel_id\":\"e\",\"text\":\"Multiple oxygen-containing groups are now present. Minor bending of side chains becomes visible.\"},{\"panel_id\":\"f\",\"text\":\"New oxygen species attach at different regions of the molecule. Local crowding starts to appear.\"},{\"panel_id\":\"g\",\"text\":\"Oxygen groups are more evenly distributed. Small conformational adjustments accommodate the added atoms.\"},{\"panel_id\":\"h\",\"text\":\"The density of oxygen increases, leading to noticeable backbone flexibility.\"},{\"panel_id\":\"i\",\"text\":\"Several oxygen clusters form close to each other. Bond angles begin to deviate from the original structure.\"},{\"panel_id\":\"j\",\"text\":\"The molecule shows clear signs of strain, though the main framework is still connected.\"},{\"panel_id\":\"k\",\"text\":\"Oxygen accumulation becomes more pronounced. Side groups rotate to relieve local stress.\"},{\"panel_id\":\"l\",\"text\":\"Multiple oxygen-rich regions interact. Structural symmetry is reduced.\"},{\"panel_id\":\"m\",\"text\":\"The backbone starts to bend noticeably. Oxygen clustering increases.\"},{\"panel_id\":\"n\",\"text\":\"Strain propagates through the structure. Several bonds appear elongated.\"},{\"panel_id\":\"o\",\"text\":\"The molecule approaches a highly oxidized state. Local distortions dominate the geometry.\"},{\"panel_id\":\"p\",\"text\":\"Heavy oxygen loading leads to strong deformation. The original shape is partially lost.\"},{\"panel_id\":\"q\",\"text\":\"Oxygen clusters interact strongly, producing pronounced backbone curvature.\"},{\"panel_id\":\"r\",\"text\":\"Structural integrity weakens further. Several regions appear over-functionalized.\"},{\"panel_id\":\"s\",\"text\":\"The molecule shows advanced distortion with dense oxygen coverage.\"},{\"panel_id\":\"t\",\"text\":\"At maximum oxygen content, the structure is highly strained and fragmented in appearance.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"},{\"panel_id\":\"h\",\"text\":\"\"},{\"panel_id\":\"i\",\"text\":\"\"},{\"panel_id\":\"j\",\"text\":\"\"},{\"panel_id\":\"k\",\"text\":\"\"},{\"panel_id\":\"l\",\"text\":\"\"},{\"panel_id\":\"m\",\"text\":\"\"},{\"panel_id\":\"n\",\"text\":\"\"},{\"panel_id\":\"o\",\"text\":\"\"},{\"panel_id\":\"p\",\"text\":\"\"},{\"panel_id\":\"q\",\"text\":\"\"},{\"panel_id\":\"r\",\"text\":\"\"},{\"panel_id\":\"s\",\"text\":\"\"},{\"panel_id\":\"t\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"j\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Oxygen incorporation increases from six to ten.\"}]},{\"panel_id\":\"q\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It provides candidate intermediates or endpoints that differ only in oxygen loading and placement. That can help bracket plausible reaction pathways and compare how oxygen density affects local chemical environments. It also supports selecting representative structures for simulation rather than guessing a single configuration.\"}]},{\"panel_id\":\"p\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies a systematic series where oxygen is incorporated stepwise while keeping the same backbone. Each successive label adds one additional oxygen to create a new configuration. This kind of enumeration is typical when mapping possible oxidation or functionalization states.\"}]},{\"panel_id\":\"k\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The same carbon framework and overall connectivity are preserved, with only oxygen count/placement changing.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_35_FIG6.jpg","caption":"0 Figure 6. Optimized geometries of one and two oxygen atoms adsorbed on partially dehydrogenated PS surfaces, expressed as a function of the hydrogen removal coverage $\\theta$ . Brown, white, and red spheres represent carbon, hydrogen, and oxygen atoms, respectively.","id":"train/atomic-layer-etching/simulation-usecase/35/FIG6","sample_id":"atomic-layer-etching/simulation-usecase/35/FIG6","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/Density Functional Theory Study of Oxygen Adsorption on Polymer Surfaces for Atomic-Layer.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1216,"height":747,"image_format":"jpeg","image_sha256":"dd36dd933e305b8cab1dc19f45980288a6b90949d24f804b042af2fa42e7eddc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":8,"width":594,"height":324},{"panel_id":"b","x":628,"y":16,"width":544,"height":313},{"panel_id":"c","x":26,"y":352,"width":595,"height":382},{"panel_id":"d","x":639,"y":354,"width":539,"height":370}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"At low hydrogen coverage (θ(H) = 0.12), the optimized molecular structures remain relatively extended. The backbone shows limited bending, and the difference between the O and 2O configurations is modest, indicating minimal structural perturbation at this coverage.\"},{\"panel_id\":\"b\",\"text\":\"At θ(H) = 0.18, hydrogen incorporation begins to induce noticeable conformational adjustment. The 2O configuration exhibits slightly greater bending than the O case, suggesting that additional oxygen enhances local structural flexibility even at moderate hydrogen coverage.\"},{\"panel_id\":\"c\",\"text\":\"At intermediate hydrogen coverage (θ(H) = 0.26), the molecular framework becomes more distorted. The presence of two oxygen atoms leads to increased folding and asymmetry compared to the single-oxygen configuration, indicating cooperative effects between hydrogen coverage and oxygen content.\"},{\"panel_id\":\"d\",\"text\":\"At high hydrogen coverage (θ(H) = 0.48), the structures are significantly more compact and rearranged. Both O and 2O configurations show strong folding, with the 2O case displaying the most pronounced distortion, reflecting substantial structural reorganization driven by combined high hydrogen coverage and oxygen incorporation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At low hydrogen coverage, the molecular backbone remains relatively extended. As hydrogen coverage increases, the structure becomes more flexible. This leads to bending, folding, and stronger local rearrangements.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Adding a second oxygen increases local structural distortion. At higher hydrogen coverage, this results in stronger folding and clustering. The combined presence of hydrogen and oxygen amplifies molecular rearrangement.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Hydrogen coverage controls molecular flexibility and mobility, while oxygen introduces chemically active sites. Their combined presence determines whether structural modification remains moderate or becomes severe. Understanding both variables helps identify safe regimes for surface or polymer modification without excessive structural disruption.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The structure at θ(H)=0.48 is much more compact and distorted than at θ(H)=0.12.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_35_FIG7.jpg","caption":"Figure 7. (a-d) Snapshots representing the final configurations of oxygen adsorption on partially dehydrogenated PS, for a hydrogen removal coverage of $\\theta = 0.48$ . The oxygen flux density and corresponding initial forces are listed below each picture. The graph shows the depth reached by the incoming oxygen atoms, expressed as a function of the flux density, as obtained at room temperature and for the set of initial forces considered. The data shown in the graph include only the lowest flux densities. For the complete set of results, see Figure S8. The color code is the same as that in the previous figures.","id":"train/atomic-layer-etching/simulation-usecase/35/FIG7","sample_id":"atomic-layer-etching/simulation-usecase/35/FIG7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/Density Functional Theory Study of Oxygen Adsorption on Polymer Surfaces for Atomic-Layer.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1590,"height":800,"image_format":"jpeg","image_sha256":"6d4e76f2f501e351189aeb5b1f124172a0b86da6371dff609a6b55982b5ca2f6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":31,"y":29,"width":311,"height":330},{"panel_id":"b","x":367,"y":27,"width":309,"height":332},{"panel_id":"c","x":35,"y":435,"width":307,"height":324},{"panel_id":"d","x":369,"y":433,"width":319,"height":324},{"panel_id":"e","x":712,"y":92,"width":869,"height":595}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_5_fig_2.jpg","caption":"Fig. 2 (a) Side view of Ge surface after chlorination with different energies. The layer thickness showing here is around $16\\mathrm{\\AA}$ . Non-adsorbed Cl/Cl $_2$ away from surface have been deleted. (b) System energy (including both kinetic and potential energy) after equilibration (error bar smaller than the symbol) and Cl penetration depth change with chlorination energy. The dashed blue line represents the system energy in pure Ge surface structure, which is $-3.57\\mathrm{eV}$ per atom. (c) Radial distribution function (RDF) of Ge-Ge atom pair within $10\\mathrm{\\AA}$ from the chlorinated surface generated by different chlorination energy.","id":"train/atomic-layer-etching/simulation-usecase/5/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/5/fig_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/Computational modelling of atomic layer etching of chlorinated germanium surfaces by argon.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":580,"height":472,"image_format":"jpeg","image_sha256":"e4217f91b721bed0b96886b23f2d8e2619791e54fc4613cb23b679777a8f003c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":6,"width":573,"height":251},{"panel_id":"b","x":3,"y":251,"width":306,"height":219},{"panel_id":"c","x":311,"y":257,"width":267,"height":213}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_5_fig_3.jpg","caption":"Fig. 3 Snapshots of Ge surface after $100\\mathrm{eV}$ Ar bombardment (200 times). Light green: Cl. Cyan: Ge.","id":"train/atomic-layer-etching/simulation-usecase/5/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/5/fig_3","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/Computational modelling of atomic layer etching of chlorinated germanium surfaces by argon.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":605,"height":295,"image_format":"jpeg","image_sha256":"1591bbc5b76c5248420021ef5ead4ef26d8958b2c961128b5fa8c2ae2f37a123","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":6,"width":600,"height":288}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_9_fig_2.jpg","caption":"Fig. 2. (a) Front and top views of the Si(111) - $(4\\times 2)$ surface geometry, dark yellow atoms are Si-adatom and Si-restatom with a dangling bond, the red dotted lines are periodic boundary conditions (PBC). (b) The optimized geometry of chlorinated Si(111) surface, a $\\mathrm{SiCl_2}$ is generated on the adatom A1, A1 is the adatom, R1 is the restatom, NR is the newly exposed restatom due to the breakage of a back-bond of A1.","id":"train/atomic-layer-etching/simulation-usecase/9/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/9/fig_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/Mechanism of photoassisted atomic layer etching of chlorinated Si(111) surfaces Insight.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":689,"height":489,"image_format":"jpeg","image_sha256":"dec9e23c207527f6d3ad021cf1adc21a15abf38527994fe04d1f2d0ae3d06c57","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":371,"y":26,"width":318,"height":460},{"panel_id":"a","x":5,"y":9,"width":368,"height":480}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_9_fig_4.jpg","caption":"Fig. 4. Molecular structure of the selected cluster for TDDFT calculations. The cluster was extracted from the optimized slab (see Fig. 2(b)) and selected by convergence tests (see Fig. A2).","id":"train/atomic-layer-etching/simulation-usecase/9/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/9/fig_4","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/Mechanism of photoassisted atomic layer etching of chlorinated Si(111) surfaces Insight.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":686,"height":717,"image_format":"jpeg","image_sha256":"2eb85848a5b7f365281db108fe6a278063bb4c8945ab5102c66707232be59316","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":2,"width":674,"height":707}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_9_fig_5.jpg","caption":"Fig. 5. HOMO and LOMO diagrams within the localized $\\mathrm{SiCl_2}$ region, side view of Fig. 4 is selected for a better visualization.","id":"train/atomic-layer-etching/simulation-usecase/9/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/9/fig_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/Mechanism of photoassisted atomic layer etching of chlorinated Si(111) surfaces Insight.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":692,"height":530,"image_format":"jpeg","image_sha256":"e8eddd960164b42c2dfd44f1a1c9230c10aa0819b7d9f0774d7c2ea3f0e20f6c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":373,"y":2,"width":315,"height":524},{"panel_id":"a","x":3,"y":2,"width":362,"height":524}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_9_fig_6.jpg","caption":"Fig. 6. Hole and electron distributions related to the lowest excitation, $\\mathrm{pink} =$ hole, blue $=$ electron, hole indicates the loss of electron.","id":"train/atomic-layer-etching/simulation-usecase/9/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/9/fig_6","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/Mechanism of photoassisted atomic layer etching of chlorinated Si(111) surfaces Insight.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":692,"height":516,"image_format":"jpeg","image_sha256":"1b13061363998db8f668fe9b23d918d065610ed93ce871cde1d77a242464713f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":363,"y":5,"width":326,"height":506},{"panel_id":"a","x":2,"y":4,"width":356,"height":510}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_16_fig_1.jpg","caption":"FIG. 1. Schematic structures of the zirconium precursors $\\mathrm{Zr(Cp)(BuDAD)(O^iPr)}$ , $\\mathrm{Zr(MeCp)(TMEA)}$ , and $\\mathrm{Zr(MeS_Cp)(TEA)}$ .","id":"train/atomic-layer-deposition/experimental-usecase/16/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/16/fig_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":45,"width":254,"height":209},{"panel_id":"b","x":361,"y":3,"width":313,"height":250},{"panel_id":"c","x":766,"y":3,"width":245,"height":250}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/Sanni Seppala et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1011,"height":255,"image_format":"jpeg","image_sha256":"ab271457dcb5d564f3afeb71e145996cf8d3e5be8ae826a2cf2a0028ccf189ce","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_33_figure_1.jpg","caption":"Figure 1 Structural formula for bis(N,N'-diisopropylacetamidinato)cobalt(II) (a) and its molecular structure as determined by X-ray crystallography (b).","id":"train/atomic-layer-deposition/experimental-usecase/33/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/33/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":3,"width":327,"height":295},{"panel_id":"b","x":338,"y":4,"width":346,"height":294}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/BOOYONG S. LIM et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":686,"height":300,"image_format":"jpeg","image_sha256":"287ba85c4e67e9b957e41a0d8c3640e506372f78eceac43516ae50b4b94b83f3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_35_figure_1.jpg","caption":"Figure 1. Molecular structure of $(\\mathrm{BuMe}_2\\mathrm{Si})_2\\mathrm{Te}$ (thermal ellipsoids at $50\\%$ ). Te to Si distances are 2.5141(13) $\\mathring{\\mathrm{A}}$ and $\\mathrm{Si - Te - Si}$ angle is $101.51(6)^{\\circ}$","id":"train/atomic-layer-deposition/experimental-usecase/35/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/35/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image depicts a molecular structure diagram illustrating the arrangement of atoms in a silicon containing Te precursor molecule.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"12\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The oxidation state is -2. This can be seen by the connection with two silicon atoms that have one electron to share.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Besides carbon impurities there can also be silicon impurities in the grown films.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1:2\"}]}]","bbox":[{"panel_id":"a","x":2,"y":6,"width":483,"height":264}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/Viljami Pore et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":486,"height":273,"image_format":"jpeg","image_sha256":"fa2d1b88f0322fa62672777ce6ef54e0644a21992a83e5987cd66426f8c7535d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_37_figure_3.jpg","caption":"Figure 3. vdW epitaxy of $\\mathrm{PbI}_2$ on sapphire. (a) Schematic of the epitaxial alignment of $\\mathrm{PbI}_2$ on sapphire with either the bottom iodine layer or a $\\mathrm{PbI}_2$ monolayer shown on the $(0\\mathrm{001})$ sapphire surface. Characterization of an epitaxial $\\mathrm{PbI}_2$ film on sapphire. (b) In-plane pole figure at $25.95^{\\circ}2\\theta$ inset showing a zoomed view of the dashed area with both the $\\{0\\mathrm{1}\\bar{1} 2\\}$ sapphire and $\\{1\\bar{0}\\bar{1}\\bar{1}\\}$ $\\mathrm{PbI}_2$ reflections visible. Extracted (c) $\\beta$ scan along $\\alpha = 29^{\\circ}$ and (d) $\\alpha$ scan along $\\beta = 180^{\\circ}$ . (e) In-plane $\\phi$ scans of the $(1\\bar{1} 20)\\mathrm{PbI}_2$ $(39.45^{\\circ}2\\theta \\chi)$ and $(1\\bar{1}\\bar{2} 0)$ sapphire $(37.65^{\\circ}2\\theta \\chi)$ reflections. The data in (e) has been offset vertically for clarity.","id":"train/atomic-layer-deposition/experimental-usecase/37/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/37/figure_3","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"polar chart (rose chart)"},{"panel_id":"c","label":"spectra chart"},{"panel_id":"d","label":"spectra chart"},{"panel_id":"e","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A molecular structure diagram illustrating the atomic arrangement in a bottom I layer and a PbI2 monolayer on a Sapphire substrate.\"},{\"panel_id\":\"b\",\"text\":\"A polar chart displaying the intensity distribution of sapphire and PbI2 reflections in reciprocal space.\"},{\"panel_id\":\"c\",\"text\":\"Spectra charts showing the intensity of reflections as a function of angle for different crystal planes.\"},{\"panel_id\":\"d\",\"text\":\"Spectra charts showing the intensity of reflections as a function of angle for different crystal planes.\"},{\"panel_id\":\"e\",\"text\":\"Spectra charts showing the intensity of reflections as a function of angle for different crystal planes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Layer Descriptio | Notation |\\n|------------------------|------------------|\\n| Bottom I layer | [2\\\\bar{1}10] sapphire |\\n| PbI₂ monolayer (I–Pb–I)| [2\\\\bar{1}10] PbI₂ |\"},{\"panel_id\":\"b\",\"text\":\"| Feature | Description |\\n|--------------|--------------------------------------|\\n| High Intensity | Around β₀ axis (aligned domains) |\\n| Color Scale | Log Intensity (High = red, Low = blue) |\"},{\"panel_id\":\"c\",\"text\":\"| Material | Peaks (° β) |\\n|--------------|---------------------------------------|\\n| (10\\\\bar{1}1) PbI₂ | ~0, ~60, ~120, ~180, ~240, ~300 |\"},{\"panel_id\":\"d\",\"text\":\"| Material | Peak Position (° α) |\\n|--------------|-----------------------|\\n| (10\\\\bar{1}1) PbI₂ | ~30 |\"},{\"panel_id\":\"e\",\"text\":\"| Material | Peaks (° φ) |\\n|-----------------|---------------------------------------|\\n| (11\\\\bar{2}0) PbI₂ | ~0, ~60, ~120, ~180, ~240, ~300 |\\n| (11\\\\bar{2}0) sapphire | ~0, ~90, ~180, ~270 |\"}]","vqa":"[{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In-plane XRD measurements confirmed the in-plane alignment, the absence of 30°/90° domains and the presence of some non-epitaxial domains\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The relatively broad peaks in β (FWHM 13°, figure (c)) and α scans (FWHM 9°, figure (d)) extracted from the in-plane pole figure suggest disorder in both the in-plane and out-of-plane orientations, respectively.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The pole figure measured at 25.95° 2θ corresponds to the asymmetric (1 0 \\\\bar(1) 1)PbI2 reflection but is also close enough to the asymmetric (0 1 \\\\bar(1) 2)sapphire reflection to yield information on the film/substrate registration. Three sharp peaks over a 360° rotation were observed for the sapphire reflection, whereas six broader peaks were seen for PbI2, both being as expected for a single in-plane orientation considering the symmetry of the reflections. The alignment of the (1 0 \\\\bar(1) 1)PbI2 and (0 1 \\\\bar(1) 2)sapphire reflections corresponds to the (0 0 1) [2 \\\\bar(11) 0]PbI2 ‖ (0 0 1)[2 \\\\bar(11) 0]Al2O3 epitaxial relation, i.e. parallel alignment of all the unit cell axes of PbI2 and sapphire as expected from the relatively small lattice mismatch between the film and the substrate.\"}]}]","bbox":[{"panel_id":"a","x":15,"y":55,"width":597,"height":392},{"panel_id":"b","x":623,"y":40,"width":508,"height":436},{"panel_id":"c","x":17,"y":493,"width":374,"height":286},{"panel_id":"d","x":393,"y":488,"width":363,"height":290},{"panel_id":"e","x":778,"y":492,"width":360,"height":286}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/Mattinen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1142,"height":783,"image_format":"jpeg","image_sha256":"49a44705c892d742192e72d6061b56be7477adb07afed294f2135e3efda6daef","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_380883842d329e1d2658af904adc1caac071a4885e5bacdc9cf4eb516fb8605b.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/38/380883842d329e1d2658af904adc1caac071a4885e5bacdc9cf4eb516fb8605b","sample_id":"atomic-layer-deposition/experimental-usecase/38/380883842d329e1d2658af904adc1caac071a4885e5bacdc9cf4eb516fb8605b","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows molecular structures of MnO₂ and LiMn₂O₄ in a crystal lattice.\"},{\"panel_id\":\"b\",\"text\":\"The image displays spectral data for β-MnO₂ and LiMn₂O₄ materials, with energy on the x-axis and intensity on the y-axis.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"|Energy|Intensity LiMn2O4|β-MnO2|\\n|---|---|---|\\n|6535|Baseline|Baseline|\\n|6550|Increase|Increase|\\n|6575|Leveling|Leveling|\\n|6600|Constant|Constant|\\n|6615|Constant|Constant|\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectrum belonging to β-MnO₂ shows some sharper features, indicating more attributions to the energy in this range.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both spectra show the same trend, this indicates that the two materials have similar properties if they relate to the given spectra.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The material shows a cubic spinel structure. Meaning there is cubic symmetry.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The red dots indicate oxygen atoms. The pink areas indicate manganese atoms and the green areas denote lithium atoms.\"}]}]","bbox":[{"panel_id":"a","x":10,"y":5,"width":219,"height":316},{"panel_id":"b","x":239,"y":21,"width":235,"height":300}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/380883842d329e1d2658af904adc1caac071a4885e5bacdc9cf4eb516fb8605b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/380883842d329e1d2658af904adc1caac071a4885e5bacdc9cf4eb516fb8605b.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"not_found"},"width":475,"height":322,"image_format":"jpeg","image_sha256":"2462b87d5233279f8f56df9c8e9fc127e214ce0af398c110b92e90042cfdbabd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_figure_1.jpg","caption":"Figure 1. Crystal structures of (a) spinel $\\mathrm{LiMn}_2\\mathrm{O}_4$ and (b) $\\beta -\\mathrm{MnO}_2$ . The interstitial sites of tetrahedral 8a and octahedral 16d are pointed. VESTA software was used to visualize the crystal structures of $\\mathrm{LiMn}_2\\mathrm{O}_4$ (ICDD PDF 35-0782) and $\\beta -\\mathrm{MnO}_2$ (ICDD PDF 24-0735).","id":"train/atomic-layer-deposition/experimental-usecase/38/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/38/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure depicts a molecular structure diagram illustrating the arrangement of atoms within a crystal lattice. It shows oxygen (red spheres), manganese (purple spheres), and lithium (green spheres) atoms forming a complex crystalline structure.\"},{\"panel_id\":\"b\",\"text\":\"The figure depicts a molecular structure diagram illustrating the arrangement of atoms within a crystal lattice. It shows oxygen (red spheres) and manganese (purple spheres) atoms forming a complex crystalline structure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There are 6 oxygen atoms directly bonded to a single manganese atom.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Each manganese atom is connected to 6 oxygen atoms, which are each shared between 3 manganese atoms, so the foumula is MnO2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"β-MnO₂ adopts a rutile-type framework composed only of edge- and corner-sharing MnO₆ octahedra. It does not contain lithium-accessible interstitial sites like the tetrahedral positions present in spinel structures. This difference leads to fundamentally different ion-transport properties.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"(1) Crystal system: cubic (Fd3̄m) vs. tetragonal (P4₂/mnm); (2) Li content: Li in tetrahedral 8a sites vs. no lithium; (3) Mn coordination: octahedral 16d in both, but different connectivity; (4) Diffusion pathways: 3D network vs. 1D channels.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, lithium ions occupy tetrahedral sites in LiMn2O4 but are absent in β-MnO2.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Tetrahedral 8a sites–occupied by lithium ions, enabling intercalation.\\nOctahedral 16d sites–occupied by manganese ions, forming the rigid lattice.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"LiMn2O4 is suitable as a cathode material because its three-dimensional manganese oxide network allows for efficient lithium intercalation, even beyond the 1:1 Li/Mn ratio, providing high specific capacity. Additionally, the structure undergoes low-volume changes during charge-discharge cycling, which is critical for maintaining structural integrity in rigid thin-film battery configurations.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The lithium atoms are located in the 8a tetrahedral sites, whereas the manganese occupy the 16 d octrahedral sites.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There are four oxygen atoms connected to a single lithium atom.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spinel LiMn₂O₄ structure highlights tetrahedral 8a and octahedral 16d interstitial sites. Lithium ions occupy the tetrahedral 8a sites, while manganese ions are coordinated within MnO₆ octahedra. These sites are crucial because lithium transport between them governs electrochemical behavior.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"These sites determine where lithium resides and migrates within the lattice. Explicit labeling helps link crystallography to lithium diffusion pathways and electrochemical performance.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"LiMn₂O₄ has a 3D cubic spinel framework with interconnected tetrahedral 8a sites that allow Li⁺ diffusion in all directions. In contrast, β-MnO₂ has 1D channels along the c-axis that can only accommodate limited Li⁺ before requiring structural transformation. This is why β-MnO₂ converts to the spinel phase once lithium concentration exceeds x ≈ 0.5.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Wyckoff positions. Specifically, 8a denotes the tetrahedral sites occupied by lithium, and 16d denotes the octahedral sites occupied by manganese.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It prevents mechanical degradation and maintains structural integrity in rigid all-solid-state battery architectures where electrodes cannot accommodate large dimensional changes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lithium intercalation occurs via the tetrahedral 8a interstitial sites in the cubic spinel LiMn2O4 lattice. The three-dimensional manganese oxide network provides pathways for lithium ions to move in and out of the lattice, allowing for reversible insertion and removal during battery charge-discharge cycles.\"}]}]","bbox":[{"panel_id":"a","x":8,"y":24,"width":300,"height":240},{"panel_id":"b","x":343,"y":46,"width":329,"height":192}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":672,"height":264,"image_format":"jpeg","image_sha256":"c8911656603582d84e3bcaaab723245378f1adbc53ff405ba10e447c5ebcdf4c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_42_4bc1bd2251b735897bcb27c1db474c8ff962a78f4aa77f892b25b98853c272c7.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/42/4bc1bd2251b735897bcb27c1db474c8ff962a78f4aa77f892b25b98853c272c7","sample_id":"atomic-layer-deposition/experimental-usecase/42/4bc1bd2251b735897bcb27c1db474c8ff962a78f4aa77f892b25b98853c272c7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":2,"width":508,"height":210}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/4bc1bd2251b735897bcb27c1db474c8ff962a78f4aa77f892b25b98853c272c7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/4bc1bd2251b735897bcb27c1db474c8ff962a78f4aa77f892b25b98853c272c7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/Coyle et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"not_found"},"width":511,"height":214,"image_format":"jpeg","image_sha256":"265b8db49124fdee84bb5290b6d7e7ba4911704d97f923ef958cef5ccf5d42fe","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_42_figure_2.jpg","caption":"Figure 2. X-ray structure of 1 (left) and 2 (right) with H-atoms and minor disordered contributions omitted for clarity and at $30\\%$ probability ellipsoids.","id":"train/atomic-layer-deposition/experimental-usecase/42/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/42/figure_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":2,"width":535,"height":400},{"panel_id":"b","x":572,"y":4,"width":644,"height":400}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/Coyle et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1217,"height":408,"image_format":"jpeg","image_sha256":"7dd9b946ddec3acf004aac970354001c66e62e860ae9692164fb53c177103635","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_42_figure_5.jpg","caption":"Figure 5. Optimized geometries of (a) 2 molecularly physisorbed on a smooth Cu (111) surface; (b) $\\mathrm{CuN(SiMe_3)_2}$ chemisorbed on the smooth surface; (c) NHC from 2 chemisorbed onto a rough surface; (d) NHC from 2 physisorbed on the smooth surface.","id":"train/atomic-layer-deposition/experimental-usecase/42/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/42/figure_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":8,"width":164,"height":184},{"panel_id":"b","x":182,"y":34,"width":162,"height":158},{"panel_id":"c","x":349,"y":30,"width":149,"height":162},{"panel_id":"d","x":510,"y":18,"width":151,"height":174}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/Coyle et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":661,"height":192,"image_format":"jpeg","image_sha256":"b3462ad5912ed4943114f4f019547e54af14ec95c3ee48704db17d5945f518bc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_57_figure_1.jpg","caption":"Figure 1. (a) Cesium precursor used in this work $\\mathrm{(Cs(btsa))}$ . (b) Growth per cycle value (GPC) of CsI films on silicon as a function of deposition temperature, deposited with 300 cycles and pulse durations of 1.5 and $0.5\\mathrm{s}$ for $\\mathrm{Cs(btsa)}$ and $\\mathrm{SnI_4}$ , respectively, and $1.0\\mathrm{s}$ purge durations. Inset shows an image of a CsI film on a $5\\times 5\\mathrm{cm}^2$ Si substrate deposited at $150^{\\circ}\\mathrm{C}$ . (c) CsI film thickness on silicon as a function of applied deposition cycles, deposited at $150^{\\circ}\\mathrm{C}$ , pulse durations of 1.5 and $0.5\\mathrm{s}$ for $\\mathrm{Cs(btsa)}$ and $\\mathrm{SnI_4}$ , respectively, and $1.0\\mathrm{s}$ purge durations. (d) GPC of CsI films on silicon as a function of $\\mathrm{Cs(btsa)}$ pulse duration at $150^{\\circ}\\mathrm{C}$ , $\\mathrm{SnI_4}$ pulse and purge durations fixed at 0.5 and $1.0\\mathrm{s}$ , respectively. (e) GPC of CsI films on silicon as a function of $\\mathrm{SnI_4}$ pulse duration at $150^{\\circ}\\mathrm{C}$ , $\\mathrm{Cs(btsa)}$ pulse and purge durations fixed at 1.5 and $0.5\\mathrm{s}$ , respectively. (f) GPC of CsI films on silicon as a function of purge duration at $150^{\\circ}\\mathrm{C}$ , $\\mathrm{Cs(btsa)}$ pulse and purge durations fixed at 1.5 and $0.5\\mathrm{s}$ , respectively.","id":"train/atomic-layer-deposition/experimental-usecase/57/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/57/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"line chart"},{"panel_id":"d","label":"line chart"},{"panel_id":"e","label":"line chart"},{"panel_id":"f","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A molecular structure diagram illustrating the atomic arrangement of the cesium precursor Cs(btsa). The bulky silylamide ligands are clearly visible, highlighting their role in enhancing precursor volatility while influencing surface reaction kinetics during the ALD process.\"},{\"panel_id\":\"b\",\"text\":\"A line plot showing the dependence of growth per cycle (GPC, in Å/cycle) on deposition temperature. A well-defined ALD temperature window is observed between 150 °C and 175 °C, where the GPC remains stable and reaches a maximum value of approximately 3.3 Å/cycle. At temperatures above 200 °C, the GPC decreases sharply, suggesting precursor desorption or reduced surface residence time.\"},{\"panel_id\":\"c\",\"text\":\"A linear plot of film thickness as a function of deposition cycles (0–400 cycles). The linear relationship confirms layer-by-layer ALD growth behavior. The linear fit passes through the origin, indicating instant nucleation on the silicon substrate with no observable nucleation delay.\"},{\"panel_id\":\"d\",\"text\":\"A saturation curve showing the variation of GPC with Cs(btsa) pulse duration. Due to the bulky molecular structure of the Cs precursor, longer pulse times (approximately 1.0–1.5 s) are required to fully saturate the surface, demonstrating self-limiting adsorption behavior characteristic of ALD.\"},{\"panel_id\":\"e\",\"text\":\"A line plot depicting the influence of SnI₄ pulse duration on GPC. Saturation is achieved rapidly at short pulse times (approximately 0.25 s), reflecting the smaller molecular size and higher reactivity of the SnI₄ precursor compared to Cs(btsa).\"},{\"panel_id\":\"f\",\"text\":\"A plot showing GPC as a function of purge time between precursor exposures. The GPC remains constant over the studied purge durations, indicating effective removal of excess precursors and by-products and confirming the absence of parasitic CVD reactions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Deposition temperature (°C) | GPC (Å) |\\n|---|---|\\n| 150 | 3.30 |\\n| 200 | 2.87 |\\n| 250 | 2.60 |\\n| 300 | 1.08 |\\n| 350 | 0.5 |\"},{\"panel_id\":\"c\",\"text\":\"| Deposition cycles | Thickness (nm) |\\n|---|---|\\n| 0 | 0 |\\n| 100 | 30 |\\n| 200 | 70 |\\n| 300 | 100 |\\n| 400 | 130 |\"},{\"panel_id\":\"d\",\"text\":\"| Cs(btsa) pulse duration (s) | GPC (Å) |\\n|---|---|\\n| 0.5 | 1.0 |\\n| 1.0 | 3.0 |\\n| 1.5 | 3.3 |\\n| 2.0 | 3.3 |\"},{\"panel_id\":\"e\",\"text\":\"| SnI₄ pulse duration (s) | GPC (Å) |\\n|---|---|\\n| 0.1 | 2.18 |\\n| 0.2 | 3.3 |\\n| 0.5 | 3.2 |\\n| 1.0 | 3.5 |\"},{\"panel_id\":\"f\",\"text\":\"| Purge duration (s) | GPC (Å) |\\n|---|---|\\n| 0.0 | 3.0 |\\n| 0.5 | 3.0 |\\n| 1.0 | 3.0 |\\n| 1.5 | 3.0 |\\n| 2.0 | 3.0 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Cs(btsa) precursor pulse (~1.5 s).\\n\\n2. Inert gas purge (~1.0 s).\\n\\n3. SnI₄ precursor pulse (~0.5 s).\\n\\n4. Inert gas purge (~1.0 s).\\nThis sequence uses pulse and purge times within the saturated regimes, ensuring complete surface reactions and byproduct removal for self-limiting growth.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An x-intercept at Cycle 50 indicates a nucleation delay, meaning the first 50 cycles are spent overcoming the surface energy barrier via island growth. As a result, very thin films (<10 nm) would be discontinuous and contain pinholes, rather than forming a uniform, conformal layer. In contrast, the near-zero intercept on silicon indicates immediate nucleation, which is ideal for ultrathin, continuous films.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This provides excellent conformality and precise thickness control. The self-limiting reactions ensure uniform deposition on all surfaces of the 3D structure, while the linear growth allows exact thickness tuning by cycle count. This is critical for creating a consistent, optimized scintillation layer across the complex detector geometry.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"GPC is stable in an ALD window (~150-200°C) then decreases at higher temperatures. The decrease is likely due to precursor decomposition or desorption of the Cs(btsa) precursor at elevated temperatures, which reduces the amount of reactive species available for the self-limiting surface reaction.\"}]}]","bbox":[{"panel_id":"a","x":123,"y":18,"width":278,"height":336},{"panel_id":"b","x":497,"y":7,"width":445,"height":352},{"panel_id":"c","x":950,"y":1,"width":455,"height":361},{"panel_id":"d","x":8,"y":373,"width":448,"height":353},{"panel_id":"e","x":501,"y":384,"width":432,"height":345},{"panel_id":"f","x":988,"y":379,"width":419,"height":345}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/Weia et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1408,"height":728,"image_format":"jpeg","image_sha256":"60fa89be065929cb877349607644f607ebb57f7edf7835a0066a8602933c5123","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_60_figure_1.jpg","caption":"Figure 1. Chemical structure of the $\\mathrm{Y(EtCp)}_2(\\mathrm{iPr - amd})$ precursor.","id":"train/atomic-layer-deposition/experimental-usecase/60/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/60/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":1,"width":288,"height":225}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/Zhao et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"60","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":289,"height":227,"image_format":"jpeg","image_sha256":"4e1e6d2b271308548bc9f4586aa8d5dfc6324572042412aa97d72aee5d19dd59","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_64_fig_1.jpg","caption":"FIG. 1. Structure of the palladium $\\beta$ -ketoiminato precursor $\\mathrm{Pd(keim2)}_2$ .","id":"train/atomic-layer-deposition/experimental-usecase/64/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/64/fig_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the molecular structure of the palladium ketoiminato precursor Pd(keim2)2, illustrating the Pd center coordinated to two ketoiminato ligands.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Precursor | Structure |\\n|---|---|\\n| Pd(keim₂)₂ | Palladium ketoiminato complex with a Pd center coordinated to two ketoiminato ligands |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The chelating ketoiminato ligands stabilize the palladium center and facilitate controlled deposition in the ALD process. The molecular structure ensures that the Pd atom is accessible for surface reactions while maintaining sufficient volatility and thermal stability, making it suitable for uniform thin-film growth.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Pd(keim2)2 has a relatively simple coordination structure with a Pd center and two ketoiminato ligands, which may differ in complexity compared to multi-ligand Pd precursors.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Palladium central atom, Two ketoiminato ligands coordinated to Pd, Ligands forming a chelating structure around Pd\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":584,"height":389}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"64","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":584,"height":389,"image_format":"jpeg","image_sha256":"d57bbf7536b2e590dcb91ecc7a3c9069fcae9030060f0494ba3a913e9dc4f134","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_10.jpg","caption":"Figure 10. Organic molecules used as precursors in ALD/MLD processes in combination with rare earth elements.","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_10","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_10","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"},{"panel_id":"h","label":"molecular structure diagram"},{"panel_id":"i","label":"molecular structure diagram"},{"panel_id":"j","label":"molecular structure diagram"},{"panel_id":"k","label":"molecular structure diagram"},{"panel_id":"l","label":"molecular structure diagram"},{"panel_id":"m","label":"molecular structure diagram"},{"panel_id":"n","label":"molecular structure diagram"},{"panel_id":"o","label":"molecular structure diagram"},{"panel_id":"p","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Terephthalic acid (TPA).\"},{\"panel_id\":\"b\",\"text\":\"2 aminoterephthalic acid (NH2 TPA).\"},{\"panel_id\":\"c\",\"text\":\"Tetrafluoroterephthalic acid (F TPA).\"},{\"panel_id\":\"d\",\"text\":\"Tetrabromoterephthalic acid (Br TPA).\"},{\"panel_id\":\"e\",\"text\":\"Benzene 1,4 diol (BDO).\"},{\"panel_id\":\"f\",\"text\":\"Pyridine 3 carboxylic acid (PDA).\"},{\"panel_id\":\"g\",\"text\":\"Pyridine 2,6 dicarboxylic acid (2,6 PDC).\"},{\"panel_id\":\"h\",\"text\":\"Pyridine 3,5 dicarboxylic acid (3,5 PDC).\"},{\"panel_id\":\"i\",\"text\":\"Pyrazine 2,3 dicarboxylic acid (PZA).\"},{\"panel_id\":\"j\",\"text\":\"Uracil (Ura).\"},{\"panel_id\":\"k\",\"text\":\"Cytosine (Cyt).\"},{\"panel_id\":\"l\",\"text\":\"1,3,5 triazine 2,4,6 triol (TZO).\"},{\"panel_id\":\"m\",\"text\":\"Naphthalene 2,6 dicarboxylic acid (2,6 NDA).\"},{\"panel_id\":\"n\",\"text\":\"Biphenyl 4,4 dicarboxylic acid (BBDC).\"},{\"panel_id\":\"o\",\"text\":\"2 hydroxyquinoline 4 carboxylic acid (HQA).\"},{\"panel_id\":\"p\",\"text\":\"Anthracene 9,10 dicarboxylic acid (9,10 ADA).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"},{\"panel_id\":\"h\",\"text\":\"\"},{\"panel_id\":\"i\",\"text\":\"\"},{\"panel_id\":\"j\",\"text\":\"\"},{\"panel_id\":\"k\",\"text\":\"\"},{\"panel_id\":\"l\",\"text\":\"\"},{\"panel_id\":\"m\",\"text\":\"\"},{\"panel_id\":\"n\",\"text\":\"\"},{\"panel_id\":\"o\",\"text\":\"\"},{\"panel_id\":\"p\",\"text\":\"\"},{\"panel_id\":\"q\",\"text\":\"\"},{\"panel_id\":\"r\",\"text\":\"\"},{\"panel_id\":\"s\",\"text\":\"\"},{\"panel_id\":\"t\",\"text\":\"\"},{\"panel_id\":\"u\",\"text\":\"\"},{\"panel_id\":\"v\",\"text\":\"\"},{\"panel_id\":\"w\",\"text\":\"\"},{\"panel_id\":\"x\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"2 aminoterephthalic acid (NH2 TPA)\\n\\n, Tetrafluoroterephthalic acid (F TPA)\\n\\n, Tetrabromoterephthalic acid (Br TPA)\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"They provide acidic groups that can react with the surface bound lanthanide species to form Ln organic linkages in a self limiting manner, enabling hybrid lanthanide organic film growth. The review highlights that many such organics have been used as ALD/MLD precursors in combination with rare earth elements.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It red shifts the emission wavelength, but tends to weaken the emission intensity.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Improved mechanical properties compared to purely inorganic films\\n\\nSpacing between Ln3+ centers that can reduce concentration quenching\\n\\nPossible sensitization of Ln3+ luminescence by the organic component\\n\\nTailoring of the excitation wavelength range via linker choice\"}]}]","bbox":[{"panel_id":"a","x":9,"y":26,"width":149,"height":310},{"panel_id":"b","x":184,"y":13,"width":232,"height":332},{"panel_id":"c","x":456,"y":9,"width":257,"height":334},{"panel_id":"d","x":751,"y":9,"width":243,"height":329},{"panel_id":"e","x":12,"y":357,"width":138,"height":257},{"panel_id":"f","x":172,"y":360,"width":229,"height":248},{"panel_id":"g","x":390,"y":361,"width":293,"height":156},{"panel_id":"h","x":709,"y":360,"width":285,"height":239},{"panel_id":"i","x":418,"y":564,"width":258,"height":288},{"panel_id":"j","x":9,"y":612,"width":380,"height":429},{"panel_id":"k","x":278,"y":614,"width":136,"height":175},{"panel_id":"l","x":746,"y":638,"width":208,"height":211},{"panel_id":"m","x":551,"y":872,"width":430,"height":151},{"panel_id":"n","x":408,"y":992,"width":285,"height":302},{"panel_id":"o","x":26,"y":1047,"width":336,"height":250}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":995,"height":1305,"image_format":"jpeg","image_sha256":"9b2562c562d7bab959721bf15099d789e6959fc540539c15fd4ad39cdf1407d1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_4.jpg","caption":"Figure 4. Survey over the different rare earth precursor classes commonly employed for the ALD and ALD/MLD of rare earth containing thin films. Color bars indicate successful ALD employment of the compound class for the respective element. R represents an element of the extended rare earth elements, while R' and R\" refer to specific substituents. These are: $\\mathsf{H} =$ Hydrogen, $\\mathsf{Me} =$ Methyl, $\\mathsf{Et} =$ Ethyl, $\\mathsf{Pr} =$ Isopropyl, $\\mathsf{Bu} =$ Butyl, $\\mathsf{tBu} =$ Tert-butyl.","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_4","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"periodic table map"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Representative rare earth ALD precursor ligand families are shown with example structures (diketonates, cyclopentadienyls, amidinate based, guanidinates, alkoxides, silylamides, acetamidinates, formamidinates). Colored squares indicate which rare earth elements have reported ALD use for each class.\"},{\"panel_id\":\"b\",\"text\":\"Periodic table map of the extended rare earth elements (Sc, Y, La to Lu) used as the color key for the element coding in (a).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Element | Symbol |\\n| --- | --- |\\n| Sc | Sc |\\n| Y | Y |\\n| La | La |\\n| Ce | Ce |\\n| Pr | Pr |\\n| Nd | Nd |\\n| Sm | Sm |\\n| Eu | Eu |\\n| Gd | Gd |\\n| Tb | Tb |\\n| Dy | Dy |\\n| Ho | Ho |\\n| Er | Er |\\n| Tm | Tm |\\n| Yb | Yb |\\n| Lu | Lu |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The grouping highlights how precursor design for rare earth ALD and ALD/MLD is commonly discussed in terms of the coordinating ligand family, because the ligand controls volatility, thermal stability, and surface reaction behavior. By showing multiple classes side by side, the figure provides a quick overview of what chemistries have been used successfully across the rare earth series. The colored squares then connect each class to specific rare earth elements for which ALD use has been reported, helping readers see coverage and gaps.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Silylamides\\n\\n, Acetamidinates\\n\\n, Formamidinates\\n\\n, Guanidinates\\n\\n, Acetamidinate bis cyclopentadienyls (contains an amidinate plus cyclopentadienyl ligands)\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The substituents tune steric bulk and intermolecular interactions, which can shift melting point and volatility and can also influence surface reaction rates, so changing R′ and R″ is a standard way to adjust deliverability and reactivity of a precursor without changing the metal center.\"}]}]","bbox":[{"panel_id":"b","x":0,"y":632,"width":1256,"height":222},{"panel_id":"a","x":1,"y":3,"width":1256,"height":615}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1348,"height":852,"image_format":"jpeg","image_sha256":"8a10481aba9cd13efae69a339de373796e11a243d3552d6e8471a70a63a4d83b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_12_figure_1.jpg","caption":"Figure 1. Structure of adsorbed $\\mathrm{HfCl_4}$ at bridge oxygen sites of the monoclinic $\\mathrm{HfO_2}$ (001) surface with coverages of (a) 0 and (b) $5.7\\mathrm{H}_2\\mathrm{O}$ molecule. $\\mathrm{nm}^{-2}$ . The white, red, green, and gray spheres represent hydrogen, oxygen, chlorine, and hafnium atoms, respectively.","id":"train/atomic-layer-deposition/simulation-usecase/12/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/12/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":8,"y":32,"width":602,"height":568},{"panel_id":"b","x":706,"y":0,"width":608,"height":599}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. Mukhopadhyay et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1314,"height":653,"image_format":"jpeg","image_sha256":"f67b983ddd0d116283ed33e0543f2fd487f676c4f42aa4c6c16b9546e6a05f5e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_12_figure_2.jpg","caption":"Figure 2. Structure of adsorbed $\\mathrm{HfCl_4}$ at dibridge oxygen sites on the $\\mathrm{m - HfO_2}$ (001) surface with coverages of (a) 1.9 and (b) $5.7\\mathrm{H}_2\\mathrm{O}$ molecule. $\\mathrm{nm}^{-2}$ .","id":"train/atomic-layer-deposition/simulation-usecase/12/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/12/figure_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":23,"width":596,"height":584},{"panel_id":"b","x":9,"y":693,"width":627,"height":620}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. Mukhopadhyay et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":636,"height":1364,"image_format":"jpeg","image_sha256":"b68bfd55dbd70d60af759e199f2d832478aead5b5ce35c1019b306d9e33d5921","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_12_figure_3.jpg","caption":"Figure 3. Structure of the $\\mathrm{HfCl_4}$ precursor adsorbed at a bridge-hydroxyl multiple site of the $\\mathrm{m - HfO_2}$ (001) surface with a water coverage of 5.7 $\\mathrm{H}_2\\mathrm{O}$ molecule. $\\mathrm{nm}^{-2}$ (75%).","id":"train/atomic-layer-deposition/simulation-usecase/12/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/12/figure_3","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":9,"y":0,"width":616,"height":600}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. Mukhopadhyay et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":625,"height":600,"image_format":"jpeg","image_sha256":"723601868c2e88eecf8b35572fc40c80832fd3832ddadfa19e037893f4f8788a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_12_figure_4.jpg","caption":"Figure 4. Potential energy profile for the ligand exchange reaction between gaseous $\\mathrm{HfCl_4}$ and $\\mathrm{Hf - OH}$ (s) where the metal precursor is adsorbed at a bridge-hydroxyl mixed site. The stationary points correspond to (a) initial reactant: $\\mathrm{Hf - (OH)}$ $\\mathrm{(s) + HfCl_4}$ g), (b) adsorbed complex: $\\mathrm{Hf - (OH).HfCl_4(s)}$ (c) transition state, (d) adsorbed HCl on the $\\mathrm{HfO_2}$ surface, and (e) products: $\\mathrm{Hf - OHCl_3 + HCl}$","id":"train/atomic-layer-deposition/simulation-usecase/12/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/12/figure_4","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"line chart"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A molecular structure diagram illustrating the stationary point of the initial reactant.\"},{\"panel_id\":\"b\",\"text\":\"A molecular structure diagram illustrating the stationary point of the transition state.\"},{\"panel_id\":\"c\",\"text\":\"A molecular structure diagram illustrating the stationary point of the products.\"},{\"panel_id\":\"d\",\"text\":\"A line chart displaying the potential energy profile for the ligand exchange reaction with the molecular structure diagrams of the stationary points.\"},{\"panel_id\":\"e\",\"text\":\"A molecular structure diagram illustrating the stationary point of the adsorbed HCl on the HfO2 surface.\"},{\"panel_id\":\"f\",\"text\":\"A molecular structure diagram illustrating the stationary point of the adsorbed complex.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"| Energy (kcal/mol) | a | b | c | d | e |\\n| --- | --- | --- | --- | --- | --- |\\n| Energy | 0 | -32.5 | -2.5 | -5 | -3.0 |\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The stationary points correspond to the initial reactants, the adsorbed complex, the transition state, the adsorbed HCl on the HfO2 surface, and the products.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is weakly bonded to the surface: this corresponds to a physisorption process.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After the first stationary point, the energy decreases significantly where the complex is adsorbed. Then, the energy increases and remains approximately constant, unless an HCl adsorbed onto the surface, which has a lower energy value.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The stationary point associated to the adsorbed complex has the lower energy values (approximately -32.5 kcal/mol).\"}]}]","bbox":[{"panel_id":"d","x":693,"y":390,"width":320,"height":273},{"panel_id":"b","x":448,"y":661,"width":327,"height":265},{"panel_id":"c","x":456,"y":41,"width":281,"height":322},{"panel_id":"e","x":789,"y":49,"width":332,"height":335},{"panel_id":"f","x":40,"y":5,"width":338,"height":309},{"panel_id":"a","x":15,"y":297,"width":1117,"height":619}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. Mukhopadhyay et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1150,"height":931,"image_format":"jpeg","image_sha256":"8df02d4599b1a1fb7495d8d3afa0dc8c5534921dce3aca3d43c713b19ae6b544","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_12_figure_5.jpg","caption":"Figure 5. Comparison of the potential energy profiles for the reaction of gaseous $\\mathrm{HfCl_4}$ and $\\mathrm{Hf - OH(s)}$ calculated using a cluster model (dashed line) and a periodic model (full line) with $100\\%$ coverage. The data for the cluster model have been taken from Reference 33. The stationary points correspond to (a) initial reactant: $\\mathrm{Hf - (OH)}$ (s) + $\\mathrm{HfCl_4}$ (g), (b) adsorbed complex: $\\mathrm{Hf - (OH)}$ $\\mathrm{HfCl_4}$ (s), (c) transition state, and (d) products: $\\mathrm{Hf - OHfCl_3 + HCl}$ .","id":"train/atomic-layer-deposition/simulation-usecase/12/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/12/figure_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"multiple line chart"},{"panel_id":"e","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A molecular structure diagram illustrating the stationary point of the initial reactant.\"},{\"panel_id\":\"b\",\"text\":\"A molecular structure diagram illustrating the stationary point of the transition state.\"},{\"panel_id\":\"c\",\"text\":\"A molecular structure diagram illustrating the stationary point of the products.\"},{\"panel_id\":\"d\",\"text\":\"A line chart displaying the potential energy profile for the reaction of gaseous HfCl4 and Hf-OH(s).\"},{\"panel_id\":\"e\",\"text\":\"A molecular structure diagram illustrating the stationary point of the adsorbed complex.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"| Energy (kcal/mol) | Slab Model | Cluster Model |\\n|------------------|------------|--------------|\\n| 0 | 0 | 0 |\\n| -5 | -2.5 | -5 |\\n| -10 | -6 | -9 |\\n| -25 | -26 | -24 |\"},{\"panel_id\":\"e\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The stationary points are the same, and the overall reaction profiles are very similar.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both the slab and cluster models show the same tendency, but the cluster model shows the highest energy values for the adsorbed complex, while the slab model shows the highest energy values for the transition state and products.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The e subfigure related to the adsorbed complex.\"}]}]","bbox":[{"panel_id":"d","x":741,"y":139,"width":258,"height":315},{"panel_id":"b","x":7,"y":323,"width":1055,"height":556},{"panel_id":"c","x":383,"y":79,"width":286,"height":306},{"panel_id":"e","x":417,"y":598,"width":648,"height":278},{"panel_id":"a","x":50,"y":7,"width":292,"height":315}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. Mukhopadhyay et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1070,"height":886,"image_format":"jpeg","image_sha256":"b82df1a62b540732ca342acd4147b760060ade73c817c90cfa0ec7b279e8ce5a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_12_figure_6.jpg","caption":"Figure 6. Potential energy profile for the ligand exchange reaction between gaseous water and the preadsorbed metal precursor. Notice that the precursor Hf atom of the adsorption complex is 5-fold coordinated. The stationary points correspond to (a) initial reactants: $-\\mathrm{HfCl}_3(\\mathrm{s}) + \\mathrm{H}_2\\mathrm{O}$ (g), (b) adsorbed complex: $-\\mathrm{HfCl}_3\\cdot \\mathrm{H}_2\\mathrm{O}$ (s), (c) transition state, (d) adsorbed HCl on $\\mathrm{HfO_2}$ surface, and (e) products: $-\\mathrm{HfCl}_2\\cdot \\mathrm{OH} + \\mathrm{HCl}$ .","id":"train/atomic-layer-deposition/simulation-usecase/12/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/12/figure_6","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A molecular structure diagram illustrating the stationary point of the initial reactant.\"},{\"panel_id\":\"b\",\"text\":\"A molecular structure diagram illustrating the stationary point of the transition state.\"},{\"panel_id\":\"c\",\"text\":\"A molecular structure diagram illustrating the stationary point of the adsorbed complex.\"},{\"panel_id\":\"d\",\"text\":\"A molecular structure diagram illustrating the stationary point of the products.\"},{\"panel_id\":\"e\",\"text\":\"A reaction energy profile diagram showing the potential energy profile for the ligand exchange reaction between H2O(g) and the preabsorbed metal precursor.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"| Energy (kcal/mol) | a | b | c | d | e |\\n|---|---|---|---|---|---|\\n| -15 | - | -13 | - | - | - |\\n| -10 | - | - | - | - | - |\\n| -5 | - | - | - | -4 | - |\\n| 0 | - | - | - | - | -1 | \\n| 5 | - | - | - | - | - | \\n| 10 | - | - | 12.5 | - | - | \\n| 15 | 15 | - | - | - | - |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"First, the potential energy of the adsorbed complex decreases to -13 kcal/mol. It then rises to the transition state before falling again when HCl is adsorbed onto the HfO2 surface. Finally, a slight increase is shown to the final stationary point.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The HCl molecule is weakly bound to the surface; this is why it desorbs.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The stationary points correspond to the initial reactants, the adsorbed complex, the transition state, the adsorbed HCl on the HfO2 surface, and the products, for the ligand exchange reaction between gaseous water and preadsorbed metal precursor complex.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Hf atom of the adsorbed precursor has five-fold coordination.\"}]}]","bbox":[{"panel_id":"d","x":657,"y":648,"width":250,"height":240},{"panel_id":"b","x":221,"y":301,"width":263,"height":282},{"panel_id":"c","x":480,"y":47,"width":205,"height":210},{"panel_id":"e","x":853,"y":279,"width":254,"height":274},{"panel_id":"a","x":115,"y":2,"width":278,"height":263}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. Mukhopadhyay et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1147,"height":881,"image_format":"jpeg","image_sha256":"5d3df3a0bdbdfd636ba792dd5372b8fee803403985105b3d625943af204605fd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_12_figure_7.jpg","caption":"Figure 7. Potential energy profile for the ligand exchange reaction between gaseous water and the preadsorbed metal precursor complex. Notice that here the Hf atom of the adsorbed precursor is 6-fold coordinated. The stationary points correspond to (a) initial reactant: $-\\mathrm{HfCl}_3\\cdot \\mathrm{H}_2\\mathrm{O}$ $(\\mathrm{s}) + \\mathrm{H}_2\\mathrm{O}$ (g), (b) adsorbed complex: $-\\mathrm{HfCl}_3\\cdot (\\mathrm{H}_2\\mathrm{O})_2$ (s), (c) transition state, (d) adsorbed HCl on the $\\mathrm{HfO_2}$ surface, and (e) products: $-\\mathrm{HfCl}_2\\cdot \\mathrm{H}_2\\mathrm{O}\\cdot \\mathrm{OH} + \\mathrm{HCl}$ .","id":"train/atomic-layer-deposition/simulation-usecase/12/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/12/figure_7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"line chart"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A molecular structure diagram illustrating the stationary point of the initial reactant.\"},{\"panel_id\":\"b\",\"text\":\"A molecular structure diagram illustrating the stationary point of the transition state.\"},{\"panel_id\":\"c\",\"text\":\"A line chart showing the potential energy profile for the ligand exchange reaction between H2O(g) and the preabsorbed metal precursor.\"},{\"panel_id\":\"d\",\"text\":\"A molecular structure diagram illustrating the stationary point of the adsorbed HCl on HfO2 surface.\"},{\"panel_id\":\"e\",\"text\":\"A molecular structure diagram illustrating the stationary point of the adsorbed complex.\"},{\"panel_id\":\"f\",\"text\":\"A molecular structure diagram illustrating the stationary point of the products.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"| Energy (kcal/mol) | a | b | c | d | e |\\n| --- | --- | --- | --- | --- | --- |\\n| 15 | - | - | 12.5 | - | - |\\n| 10 | - | - | - | - | - |\\n| 5 | - | - | - | - | - |\\n| 0 | 0 | - | - | - | -1 | \\n| -5 | - | - | - | -6 | - | \\n| -10 | - | - | - | - | - | \\n| -15 | - | -13 | - | - | - |\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The potential energy first decreases strongly for the adsorbed complex, then increases to the transition state and finally decreases again for the last two stationary points.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The water addition to the aquo-trichloro hafnium complex is favorable.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The stationary points correspond to the initial reactants, the adsorbed complex, the transition state, the adsorbed HCl on the HfO2 surface, and the products, for the ligand exchange reaction between gaseous water and preadsorbed metal precursor complex.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Hf atom of the adsorbed precursor has six-fold coordination.\"}]}]","bbox":[{"panel_id":"d","x":648,"y":364,"width":280,"height":286},{"panel_id":"b","x":207,"y":634,"width":313,"height":269},{"panel_id":"c","x":4,"y":256,"width":936,"height":499},{"panel_id":"e","x":951,"y":607,"width":250,"height":294},{"panel_id":"f","x":416,"y":28,"width":278,"height":296},{"panel_id":"a","x":8,"y":1,"width":305,"height":265}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. 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The $C^2$ ions of the adsorbed metal precursors get solvated with water molecules associated with the water multilayer at $575~\\mathrm{K}$ . Note that concomitant with dissociation of $\\mathrm{Hf - Cl}$ bonds facilitated by solvation, the water adsorbed on the metal precursor loses its proton to the surface. Generally, one also sees the densification process, where the precursor forms a third bond with the $\\mathrm{HfO_2}$ surface.","id":"train/atomic-layer-deposition/simulation-usecase/12/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/12/figure_9","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"c","x":4,"y":688,"width":595,"height":579},{"panel_id":"b","x":664,"y":22,"width":567,"height":570},{"panel_id":"a","x":10,"y":12,"width":579,"height":592},{"panel_id":"d","x":651,"y":678,"width":592,"height":602}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. 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see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_15_fig4.jpg","caption":"Fig.4. t t t the web version of this article.)","id":"train/atomic-layer-deposition/simulation-usecase/15/fig4","sample_id":"atomic-layer-deposition/simulation-usecase/15/fig4","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":9,"y":2,"width":303,"height":281},{"panel_id":"b","x":312,"y":7,"width":304,"height":272},{"panel_id":"c","x":617,"y":8,"width":337,"height":270},{"panel_id":"d","x":5,"y":289,"width":289,"height":255},{"panel_id":"e","x":300,"y":286,"width":306,"height":255},{"panel_id":"f","x":615,"y":286,"width":335,"height":255}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/Chengxing Cui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":955,"height":545,"image_format":"jpeg","image_sha256":"55e1755095f660b99c513e30ec98defbe3cf25a669ad23726dea77f448946317","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_15_fig5.jpg","caption":"Fig.5. t t t the web version of this article.)","id":"train/atomic-layer-deposition/simulation-usecase/15/fig5","sample_id":"atomic-layer-deposition/simulation-usecase/15/fig5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"},{"panel_id":"h","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":9,"y":8,"width":231,"height":231},{"panel_id":"b","x":250,"y":8,"width":233,"height":231},{"panel_id":"c","x":497,"y":6,"width":223,"height":235},{"panel_id":"d","x":737,"y":6,"width":206,"height":242},{"panel_id":"e","x":9,"y":264,"width":220,"height":222},{"panel_id":"f","x":241,"y":262,"width":238,"height":227},{"panel_id":"g","x":491,"y":262,"width":242,"height":225},{"panel_id":"h","x":745,"y":258,"width":210,"height":227}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/fig5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/fig5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/Chengxing Cui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":953,"height":489,"image_format":"jpeg","image_sha256":"be7284ac06fa82c20a7aa4e58ecf2b0a380b448edf0a8f59c935053e2ea45b7a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_15_fig_1.jpg","caption":"Fig. 1. $\\mathrm{Si_{23}H_{24}(OH)_4}$ two-dimer cluster used here to simulate the silicon surface. The red, gray and white small balls represent oxygen, silicon and hydrogen atoms, respectively. (For interpretation of the references to color in this figure legend, the reader is referred to the web version of this article.)","id":"train/atomic-layer-deposition/simulation-usecase/15/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/15/fig_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":7,"width":640,"height":418}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/Chengxing Cui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":642,"height":425,"image_format":"jpeg","image_sha256":"464826a67f6ad1b2b22bda7d3d7807b59e874b670a3e5550473cfe410c07347f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_15_fig_7.jpg","caption":"Fig. 7. Transition state structure for the water loss reaction of adjacent $\\mathrm{Zr - OH}$ groups.","id":"train/atomic-layer-deposition/simulation-usecase/15/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/15/fig_7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":3,"width":635,"height":566}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/Chengxing Cui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":642,"height":572,"image_format":"jpeg","image_sha256":"6267e008b36f0f881fabeeee3c633efb2e1c432b7aa13be70c9297c8809ced5d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_11.jpg","caption":"Figure 11: Schrodinger suite computed precursors (heteroleptic and homoleptic) when three halide (fluorine, chlorine, and iodine) ligands are united around tetravalent titanium metal centre (colour grey represents titanium, orange is fluorine, green is chlorine, and magenta is iodine) [128].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_11","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_11","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":4,"width":636,"height":689}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":642,"height":695,"image_format":"jpeg","image_sha256":"0e9c82fd51b5d7b38dcd3d2b20a2cced872c2866059959f0f2c6ad3f188f91a3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_13.jpg","caption":"Figure 13: $C_{24}$ sinking on the surface of $\\mathrm{Cu(111)}$ e at various temperatures. (a)–(f) $C_{24}$ cross-sections on the surface of $\\mathrm{Cu(111)}$ MD simulations after 120 ps at temperatures of 1,200, 1,250, 1,300, 1,350, 1,400 and $1,450\\mathrm{K}$ , respectively. Copper atoms that are close to the boundary of $C_{24}$ are shown in yellow. (g) The $C_{24}$ profiles that were extracted at the different temperatures (a)–(f). The ochre and cyan balls show copper and carbon atoms, respectively. (h) The computed Lindemann index of copper substrates in solid, semi-molten, and liquid forms. (i) Temperature-dependent average heights of C24 and its neighbouring atoms during the final 20 ps [119].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_13","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_13","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"},{"panel_id":"h","label":"multiple scatter plot"},{"panel_id":"i","label":"grouped bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A series of molecular structure diagrams showing the arrangement of atoms at different temperatures.\"},{\"panel_id\":\"b\",\"text\":\"A series of molecular structure diagrams showing the arrangement of atoms at different temperatures.\"},{\"panel_id\":\"c\",\"text\":\"A series of molecular structure diagrams showing the arrangement of atoms at different temperatures.\"},{\"panel_id\":\"d\",\"text\":\"A series of molecular structure diagrams showing the arrangement of atoms at different temperatures.\"},{\"panel_id\":\"e\",\"text\":\"A series of molecular structure diagrams showing the arrangement of atoms at different temperatures.\"},{\"panel_id\":\"f\",\"text\":\"A series of molecular structure diagrams showing the arrangement of atoms at different temperatures.\"},{\"panel_id\":\"g\",\"text\":\"A series of molecular structure diagrams showing the arrangement of atoms at different temperatures.\"},{\"panel_id\":\"h\",\"text\":\"A scattered plot showing the Lindemann index (a.u) (a measure of atomic displacement/disorder) over MD time (ps) computed for copper substrates in three states solid, semi-molten, and liquid states.\"},{\"panel_id\":\"i\",\"text\":\"A bar chart comparing the height of C24 and Cu at different temperatures. The averaged heights were measured for C24 and Cu and its neighbouring atoms during the final 20 ps\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"},{\"panel_id\":\"h\",\"text\":\"| Lindemann index (a.u.) | MD time (ps) Solid | Semi-molten | Liquid |\\n|---|---|---|---|\\n| 0 | 0.025 | 0.03 | 0.10 |\\n| 20 | 0.020 | 0.03 | 0.10 |\\n| 40 | 0.020 | 0.03 | 0.10 |\\n| 60 | 0.020 | 0.03 | 0.10 |\\n| 80 | 0.020 | 0.03 | 0.10 |\\n| 100 | 0.020 | 0.03 | 0.10 |\\n| 120 | 0.020 | 0.030 | 0.10 |\"},{\"panel_id\":\"i\",\"text\":\"| Temperature | Height of C24 | height of Cu |\\n|---|---|---|\\n| 1200 | 4.7 | 3.3 |\\n| 1250 | 4.8 | 3.4 |\\n| 1300 | 5.1 | 3.7 |\\n| 1350 | 4.0 | 3.7 |\\n| 1400 | 3.2 | 3.2 |\\n| 1450 | 3.1 | 3.1 |\"}]","vqa":"[{\"panel_id\":\"i\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The rapid increase indicates the thermal energy overcoming the adsorption bond. The molecule transitions from a chemisorbed or physisorbed state, where it is held close to the surface, to a detached or precursor-to-desorption state as intermolecular vibrations exceed the binding force.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Thermal Stability Limit: It identifies ~1300 K as the critical temperature where this specific molecule desorbs, defining the upper thermal limit for stable surface reactions.\\n\\nProcess Window: It shows that the molecule remains anchored to the catalytic surface below 1300 K, which is essential for enabling sufficient time for surface diffusion and chemical reactions during growth or catalysis.\"}]},{\"panel_id\":\"h\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. It remains low and stable, indicating minimal atomic disorder.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Lindemann index (δ) is a dimensionless parameter used to quantify atomic disorder or the onset of melting in a material. It is defined as the root-mean-square (RMS) fluctuation in the distance between atom pairs, normalized by the average nearest-neighbor distance.\\n\\nLow δ (~0.01–0.06): Atoms vibrate slightly → Solid\\nIntermediate δ (~0.06–0.15): Some atoms break free, others stay bound → Semi-molten / Premelting\\nHigh δ (>0.15): Atoms diffuse freely → Liquid\"}]}]","bbox":[{"panel_id":"a","x":13,"y":20,"width":546,"height":272},{"panel_id":"b","x":733,"y":17,"width":543,"height":274},{"panel_id":"c","x":10,"y":312,"width":544,"height":273},{"panel_id":"d","x":733,"y":312,"width":544,"height":273},{"panel_id":"e","x":11,"y":604,"width":547,"height":273},{"panel_id":"f","x":733,"y":600,"width":544,"height":275},{"panel_id":"g","x":0,"y":906,"width":1319,"height":160},{"panel_id":"h","x":9,"y":1083,"width":672,"height":395},{"panel_id":"i","x":688,"y":1087,"width":609,"height":391}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1319,"height":1478,"image_format":"jpeg","image_sha256":"fa757344760760f5b2a06cff1c97609e7acb8ec61a6f7991fafe7f5102c143ab","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_15.jpg","caption":"Figure 15: (a) Schematics of ReaxFF-MD calculations at 1,000 K of consecutive deposition of TMA and H20 dosages on a GeOx/Ge substrate resulting in $A l_{2}O_{3}$ ALD. (b) The absorption of TMA precursor on the surface of GeOx/Ge during ReaxFF-MD simulation. The marked molecules (1 and 2) in the first TMA dosage snapshot are by-products of $H_{3}C - CH_{3}$ and $CH_{4}$ . (c) Numerical representation of the oxygen atoms that were coordinated to Ge in the $A l_{2}O_{3}$ ALD simulation performed using ReaxFF-MD on GeOx/Ge [10].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_15","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_15","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"reaction energy profile diagram"},{"panel_id":"c","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"b\",\"text\":\"The graph represents the Energy profile for a computation (ReaxFF-MD) simulations for Al2O3 ALD using TMA/H2O sequential doses on a GeOx(5 Å)/Ge(100) slab at 1000 K, the chemical reaction where a trimethylaluminum (TMA) molecule adsorbs onto a germania (Ge-O-*) surface site, forming an adsorbed Ge-O-Al(CH₃)₂ complex while releasing a methane (CH₄) molecule.\"},{\"panel_id\":\"c\",\"text\":\"This figure is a stacked graph showing the evolution of Germanium (Ge) coordination number (CN) to Oxygen over time during a simulated ALD process. It tracks the structure through two TMA doses and one H₂O dose, showing how the GeOx interface changes as Al₂O₃ deposition proceeds.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Energy [eV] | reaction state |\\n|----------------|--------------------|\\n| 0.0 | Initial State |\\n| -0.1 | Transition state | \\n| -3.02 |Final state |\"},{\"panel_id\":\"c\",\"text\":\"| Time (ns) | Counts (%) | CN |\\n|-----------|------------|-----|\\n| 0 | 13.38 | 1 |\\n| 0 | 10.8 | 2 |\\n| 0 | 17.68 | 3 |\\n| 0 | 48.11 | 4 |\\n| 0 | 9.75 | 5 |\\n| 0.5 | 12.64 | 1 |\\n| 0.5 | 13.69 | 2 |\\n| 0.5 | 37.35 | 3 |\\n| 0.5 | 34.15 | 4 |\\n| 0.5 | 0.1 | 5 |\\n| 1 | 10.86 | 1 |\\n| 1 | 16.5 | 2 |\\n| 1 | 42.39 | 3 |\\n| 1 | 29.11 | 4 |\\n| 1 | 0.1 | 5 |\\n| 1.5 | 10.86 | 1 |\\n| 1.5 | 18.3 | 2 |\\n| 1.5 | 37.35 | 3 |\\n| 1.5 | 32 | 4 |\\n| 1.5 | 0.1 | 5 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thin GeOx layer makes the surface more reactive than a fully oxidized SiO₂ surface. The Ge-O-* bond is weaker than a Si-O-* bond due to germanium's lower electronegativity, making the oxygen more basic and nucleophilic. This likely lowers the initial energy state for the TMA molecule, contributing to a different (potentially lower) overall reaction barrier for the first ALD half-cycle on this surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the process requires sufficient thermal energy to overcome the ~3 eV barrier, justifying the high simulation temperature of 1000 K used to model the reaction kinetics. However, the exothermic nature confirms the reaction is thermodynamically favorable and will proceed to completion once activated, forming a stable Al-O-Ge linkage that anchors the Al₂O₃ film to the substrate.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"0-0.5 ns: First TMA exposure.\\n\\n0.5-1.0 ns: Second TMA exposure.\\n\\n1.0-1.5 ns: H₂O exposure.\\nThe key control parameter is the coordination number (CN) of Ge atoms to O atoms. It monitors the structural evolution of the GeOx interlayer, indicating oxidation state changes and intermixing during ALD.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SiO₂ barrier layer is preferable. Direct ALD on GeOx leads to dynamic intermixing and a broad, unstable GeOx/Al₂O₃ interface with variable Ge oxidation states (CN 1-5), which are potential charge traps. A thin SiO₂ provides a more chemically stable, passivating interface with Ge, preventing this intermixing and resulting in lower interfacial defect density.\"}]}]","bbox":[{"panel_id":"c","x":522,"y":1033,"width":420,"height":423},{"panel_id":"b","x":0,"y":1033,"width":513,"height":430},{"panel_id":"a","x":0,"y":1,"width":959,"height":1022}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":961,"height":1472,"image_format":"jpeg","image_sha256":"3aadc2cae35982a9eb1625f59d978c206b2c48483b717d9ee24bc033e8edc991","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_16.jpg","caption":"Figure 16: Reactive MD dissociation of copper(II) acetylacetonate on the $\\mathrm{Cu(110)}$ surface [154]. Initially, the $\\mathrm{Cu - O}$ bond broke and the acac-ligand tilted (7.3 ps). The acac-ligand then totally dissociated from the $\\mathrm{Cu(acac)}_2$ molecule, thereby creating acac and $\\mathrm{Cu(acac)}$ species on the surface (10.8 ps). Finally, $\\mathrm{Cu(acac)}$ dissociated into copper and acac species on the surface after 18.5 ps [154].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_16","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_16","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"c","x":3,"y":269,"width":319,"height":260},{"panel_id":"b","x":331,"y":8,"width":309,"height":253},{"panel_id":"a","x":0,"y":4,"width":322,"height":255},{"panel_id":"d","x":330,"y":272,"width":312,"height":258}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_16.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":644,"height":534,"image_format":"jpeg","image_sha256":"81b0920ddcc98cea9ec35537dc53c259b4954f7f4fefbceb26e2eb3bf660d24b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_17.jpg","caption":"Figure 17: Reactive MD snapshots for the reaction between copper(II) acetylacetonate and hydrogen atoms on the copper (110) surface [154].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_17","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_17","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"c","x":601,"y":17,"width":272,"height":552},{"panel_id":"b","x":299,"y":10,"width":292,"height":553},{"panel_id":"a","x":11,"y":5,"width":279,"height":560},{"panel_id":"d","x":885,"y":19,"width":272,"height":541}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_17.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_17.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1166,"height":566,"image_format":"jpeg","image_sha256":"2782b72ec71bb9a98b1606da790e824a2c0925cd94a180619a12272ab8ec4385","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_18.jpg","caption":"Figure 18: MD trajectory [189]. The copper monolayer was initially well aligned and in proportion with the substrate. Through surface diffusion, copper atoms were then rapidly disassembled and moved away from their equilibrium locations when molecular dynamics was run.","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_18","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_18","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"c","x":4,"y":517,"width":434,"height":483},{"panel_id":"b","x":455,"y":8,"width":418,"height":499},{"panel_id":"a","x":4,"y":3,"width":427,"height":499},{"panel_id":"d","x":436,"y":524,"width":432,"height":480}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_18.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_18.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":875,"height":1008,"image_format":"jpeg","image_sha256":"e0080b989e5cd68eb20b3b2d33ef34f1a5fe448ad1a7f3c3f52fd6acaf69692d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_6.jpg","caption":"Figure 6: (a) Slab configurations of $\\mathsf{Pt}_2\\mathsf{Ru}_3$ alloy built on platinum-based face-centred cubic structures for diverse conformities of platinum and ruthenium atoms. (b) Slab configurations of $\\mathsf{Pt}_2\\mathsf{Ru}_3$ alloy built on ruthenium-based hexagonal close-packed structures for various conformations of platinum and ruthenium atoms [106].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_6","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":2,"y":604,"width":1036,"height":601},{"panel_id":"a","x":12,"y":7,"width":1024,"height":587}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1039,"height":1220,"image_format":"jpeg","image_sha256":"38c35bb23711e2f6b3aaa024138d7849b2daa4e59ee4ccd1d277679facaf9787","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_8.jpg","caption":"Figure 8: Primary orientations of $\\mathrm{MeCpPtMe_3}$ on a hydroxylated graphene surface models (a and b). (Grey = carbon, blue = platinum, red = oxygen, and white = hydrogen atoms) [19].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_8","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":451,"y":6,"width":420,"height":452},{"panel_id":"a","x":354,"y":0,"width":0,"height":1}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":875,"height":463,"image_format":"jpeg","image_sha256":"900bbf092f5d1795d60fe18d256b8513748b74f7a137f364a8dbb4f9a2e406fb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_9.jpg","caption":"Figure 9: Steps and products in the dissociation reaction. (a) and (b) stretching and rotation of $\\mathrm{Zn - O}$ bonds in the $\\mathrm{Zn(acac)2}$ complex when H atoms are introduced, (c) stretching and torsion increase along the $\\mathrm{Zn - O}$ bond, (d) the $\\mathrm{Zn - O}$ bond reaches its maximum length as the H atoms move closer to the complex centre and (e) final step upon the completion of $\\mathrm{Zn^{2 + }}$ extraction and formation of the O and H bond [77].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_9","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"d","x":4,"y":309,"width":405,"height":325},{"panel_id":"b","x":279,"y":8,"width":362,"height":286},{"panel_id":"c","x":348,"y":314,"width":298,"height":298},{"panel_id":"e","x":0,"y":624,"width":647,"height":280},{"panel_id":"a","x":4,"y":2,"width":286,"height":283}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":650,"height":906,"image_format":"jpeg","image_sha256":"12e1842b29c3e582283a49e4138270b54b217eec4dca8548d03cf6fdfdece373","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_19_84c188891e9f5a7dd3e9676f30756ca0444ee275d66c374f2ec10f4e82062772.jpg","caption":"ON adsorption and dissociation on (b) $\\mathrm { I n } _ { 2 } \\mathrm { O } _ { 3 } ,$ (c) ${ \\mathrm { G a } } _ { 2 } { \\mathrm { O } } _ { 3 } ,$ and (d) ${ \\mathrm { Z n O } }$ The reaction energy of a single step, $\\Delta E _ { n } ,$ was calculated by $\\Delta E _ { n } = E _ { S n } -$ Esn-1.","id":"train/atomic-layer-deposition/simulation-usecase/19/84c188891e9f5a7dd3e9676f30756ca0444ee275d66c374f2ec10f4e82062772","sample_id":"atomic-layer-deposition/simulation-usecase/19/84c188891e9f5a7dd3e9676f30756ca0444ee275d66c374f2ec10f4e82062772","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"reaction energy profile diagram"},{"panel_id":"c","label":"reaction energy profile diagram"},{"panel_id":"d","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"c","x":13,"y":572,"width":647,"height":433},{"panel_id":"b","x":709,"y":42,"width":611,"height":449},{"panel_id":"a","x":7,"y":48,"width":665,"height":454},{"panel_id":"d","x":694,"y":572,"width":619,"height":431}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/84c188891e9f5a7dd3e9676f30756ca0444ee275d66c374f2ec10f4e82062772.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/84c188891e9f5a7dd3e9676f30756ca0444ee275d66c374f2ec10f4e82062772.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/Dong-Gyu Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1320,"height":1009,"image_format":"jpeg","image_sha256":"35df400c355ac5ac4633117e48c76b4a17de1a731a0cf5499735b8691281078f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_2_fig_1.jpg","caption":"Fig. 1. The models (a) $\\mathrm{Si(OH)_3 - OH}$ , (b) $\\mathrm{Si(OSiH_3)_3 - OH}$ and (c) $\\mathrm{Si_9O_3H_{12} - H - OH}$ , representing $\\mathrm{SiO_2}$ surface. Oxygen atoms are red, silicon atoms are grey and hydrogen atoms are light grey. (For interpretation of the references to color in this figure legend, the reader is referred to the web version of this paper.)","id":"train/atomic-layer-deposition/simulation-usecase/2/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/2/fig_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":20,"y":9,"width":313,"height":311},{"panel_id":"b","x":529,"y":167,"width":476,"height":442},{"panel_id":"c","x":20,"y":360,"width":471,"height":351}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/Jie Ren et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1005,"height":711,"image_format":"jpeg","image_sha256":"24f1991dab5a8f78a0c37c32ea131a2995f32ea5b6014d6519db4e28f65b43b4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_23_fig1.jpg","caption":"Fig.1 The structures of (a) a typical Pt nanoparticle with Pt (111), Pt (100) and Pt edge sites and (b) the precursors trimethylaluminum (TMA) and dimethylaluminum isopropoxide (DMAI).","id":"train/atomic-layer-deposition/simulation-usecase/23/fig1","sample_id":"atomic-layer-deposition/simulation-usecase/23/fig1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":6,"width":393,"height":310},{"panel_id":"b","x":429,"y":16,"width":224,"height":292}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/Jiaqiang Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":653,"height":317,"image_format":"jpeg","image_sha256":"d1caf3481eb6ca625450be84e6b7e0230084e353d58600bc7cb3f9c70a4917b3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_23_fig_9.jpg","caption":"Fig. 9 (a) The charge transfer and Al-C bond lengths of TMA and DMAI and (b) structure changes before and after TMA and DMAI adsorption.","id":"train/atomic-layer-deposition/simulation-usecase/23/fig_9","sample_id":"atomic-layer-deposition/simulation-usecase/23/fig_9","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":10,"y":10,"width":286,"height":364},{"panel_id":"b","x":313,"y":8,"width":1052,"height":361}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/Jiaqiang Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1370,"height":375,"image_format":"jpeg","image_sha256":"851ec9d4ab0a6d06c7fa259d89e548a6b2e13ef1ee9f7804d4edac73f9b6dc44","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_1.jpg","caption":"Figure 1. (A) DFT optimized surface structure of hydroxylated $\\mathsf{HfO}_2$ .[6] Terminal hydroxyl group (a), terminal adsorbed water (b), bridging hydroxyl (c), three coordinated oxygen (d), four coordinated oxygen (e), and seven coordinated hafnium (f) are highlighted. (Red = O, White = H, large grey = Hf). (B) Schematic 2D diagram illustrating mapping of the same surface structure. Blue and red boxes show the cation and anion sites, respectively. The dashed lines show the connection between sites in this 2D diagram but the actual c.n. in three dimensions is also given.","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":2,"width":564,"height":532},{"panel_id":"b","x":565,"y":4,"width":577,"height":538}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1144,"height":542,"image_format":"jpeg","image_sha256":"25a9cd319e43d151b38488d7a0e74839506e02a9aa6c59edb6b8923441de32fe","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_11.jpg","caption":"Figure 11. Top view of the surface evolution during the first cycle. Snapshots show: (A) The substrate which includes two layers of oxygen (O and OH groups). (B) The end of the metal pulse with a surface that is depleted of protons due to the desorption of HX. (C) The end of the purge with a minor amount of further desorption. (D) The end of the oxygen pulse in which the arrival of $\\mathsf{H}_2\\mathsf{O}$ molecules causes oxygen and protons to be introduced to the surface. Fragments for discussion (a-f) are highlighted by circles. The dashed box shows an area where adsorption of the next metal precursor is blocked because of the steric effect.","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_11","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_11","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":21,"y":7,"width":526,"height":521},{"panel_id":"b","x":554,"y":7,"width":521,"height":519},{"panel_id":"c","x":15,"y":538,"width":538,"height":511},{"panel_id":"d","x":555,"y":536,"width":515,"height":515}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1078,"height":1059,"image_format":"jpeg","image_sha256":"d9bfe2109be8687f611cb6aae2f8e71037db5618525014afed4f67776a4ba686","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_13.jpg","caption":"Figure 13. Top view of the surface at the end of the 18th metal pulse. $\\mathsf{HfX}_3,$ $\\mathsf{HfX}_{2},$ and HfX are highlighted by circle, hexagon, and square, respectively. The dashed box shows free space where adsorption of $\\mathsf{HfX}_4$ does not occur. The O and OH groups in the dashed box are highly coordinated or blocked by the remaining ligands. [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_13","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_13","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":9,"y":8,"width":592,"height":592}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":606,"height":605,"image_format":"jpeg","image_sha256":"625ee0260f468b1924d28c5d49ddb4dac188b49fdd382c29e592c8a7faf009c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_14.jpg","caption":"Figure 14. Side view of ALD growth for $\\mathsf{HfO}_2$ after 20 cycles. (A) Direct adsorption of $\\mathsf{H}_2\\mathsf{O}$ molecules through HfX is considered (cooperative effect is neglected). As a result, the growth rate is overestimated by a factor of 2 that obtained when including the cooperative effect only. (B) Cooperation between the HfX is considered to adsorb $\\mathsf{H}_2\\mathsf{O}$ molecule. [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_14","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_14","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":9,"y":7,"width":497,"height":479},{"panel_id":"b","x":515,"y":8,"width":489,"height":477}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1008,"height":486,"image_format":"jpeg","image_sha256":"075b7b3f5126999b6e4c17fc6afe361e92e0419aff2ca19bfd3fc11ef9f6488f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_16.jpg","caption":"Figure 16. Top view of ALD film growth for $\\mathsf{HfO_2}$ after 20 cycles. (A) Migration is removed from the reaction list; a low growth rate and poor quality of film is obtained. (B) Structural relaxation events are considered; a realistic growth rate and dense film are achieved. [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_16","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_16","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":502,"height":494},{"panel_id":"b","x":509,"y":4,"width":489,"height":483}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_16.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1006,"height":497,"image_format":"jpeg","image_sha256":"98205868072e9006e0bdcf01741602dc6b542dd45cbe6d200735c43d9cc4c7cb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_4.jpg","caption":"Figure 4. Steric hindrance between two $\\mathsf{HfX}_3$ from DFT calculation. Steric hindrance leads to a change in the adsorption pattern of the precursors in ALD. Some of the blocked sites are highlighted indicating that they are unable to adsorb the next Hf precursor. $(\\mathsf{Red} = \\mathsf{O},$ White $= \\mathsf{H},$ large grey $= \\mathsf{Hf},$ dark grey $= \\mathsf{C},$ and blue $= \\mathsf{N}$ [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_4","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":4,"width":602,"height":465}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":611,"height":472,"image_format":"jpeg","image_sha256":"2b91cc1e2d367d286778c38b8be43b23e034d0428d06510eda3da60450a6585d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_7.jpg","caption":"Figure 7. A cluster of three $\\mathsf{HfX}_2$ in adjacent cation/cation sites (DFT). The highlighted oxygen atoms are some of those that are blocked with respect to adsorption of another hafnium precursor. The Hf-Hf distance is stretched $(3.9\\mathrm{\\AA})$ to minimize repulsion between the aligned ligands. [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":2,"width":608,"height":475}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":614,"height":481,"image_format":"jpeg","image_sha256":"5b91d3c1dc3844a9215a84b619ca4836a3713f99f402f3b11b83addeefc1ebf7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_8.jpg","caption":"Figure 8. A cluster of four HfX in adjacent cation/anion sites (DFT). The distance between highlighted hafnium atoms $(3.3\\mathrm{\\AA})$ shows that repulsion between the aligned ligands is less problematic than in the case depicted in Figure 7. [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_8","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":0,"width":596,"height":469}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":608,"height":483,"image_format":"jpeg","image_sha256":"e1b6b6316a7e13de1989445bfb3c3a4369c0d1f5391d3764485c3c4b8b2ee378","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_27_figure_3.jpg","caption":"Figure 3. (a,b) Two cluster models of two neighboring -OH groups on a hydroxylated $\\mathrm{SiO}_2$ surface. The shaded lower part indicates the \"surface\" part of the clusters. (c) 2D periodic model of a hydroxylated $\\alpha$ -quartz (0001) surface.","id":"train/atomic-layer-deposition/simulation-usecase/27/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/27/figure_3","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure presents three computational model systems used to study reaction energetics in PEALD: a small Si₂O₇H₆ cluster, a larger Si₈O₁₄H₈ cage-like cluster, and a periodic hydroxylated α-quartz (0001) surface. These models represent increasing levels of structural complexity and serve as representative substrates for simulating precursor reactions and surface chemistry.\"},{\"panel_id\":\"b\",\"text\":\"Figure presents three computational model systems used to study reaction energetics in PEALD: a small Si₂O₇H₆ cluster, a larger Si₈O₁₄H₈ cage-like cluster, and a periodic hydroxylated α-quartz (0001) surface. These models represent increasing levels of structural complexity and serve as representative substrates for simulating precursor reactions and surface chemistry.\"},{\"panel_id\":\"c\",\"text\":\"Figure presents three computational model systems used to study reaction energetics in PEALD: a small Si₂O₇H₆ cluster, a larger Si₈O₁₄H₈ cage-like cluster, and a periodic hydroxylated α-quartz (0001) surface. These models represent increasing levels of structural complexity and serve as representative substrates for simulating precursor reactions and surface chemistry.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Using different structural models allows researchers to capture how precursor and plasma species behave on surfaces with varying complexity. Small clusters help isolate specific reaction mechanisms, while larger clusters and periodic surfaces offer more realistic geometries that better represent the actual substrate. Together, these models provide a balanced approach for understanding reactivity trends, validating computational predictions, and assessing how surface structure influences PEALD film growth behavior.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The hydroxylated α-quartz (0001) surface model.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Size and number of atoms, Degree of structural complexity (cluster vs. cage vs. periodic surface), Presence and distribution of surface –OH groups, Dimensionality (finite cluster vs. extended crystal surface)\"}]}]","bbox":[{"panel_id":"a","x":1,"y":8,"width":388,"height":409},{"panel_id":"b","x":400,"y":7,"width":320,"height":411},{"panel_id":"c","x":738,"y":24,"width":265,"height":393}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/Martin Becker et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1117,"height":239,"image_format":"jpeg","image_sha256":"c8e0be451c59000002f869291a30a7cee8387f14434e58b19b8bb4703f0d0dcd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_27_figure_5.jpg","caption":"Figure 5. Simulated structures of PEALD-deposited $\\mathrm{SiO_2}$ with different occupation probabilities $p_{\\mathrm{P1}}$ and $p_{\\mathrm{P2}}$ .","id":"train/atomic-layer-deposition/simulation-usecase/27/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/27/figure_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure presents simulated atomic structures of PEALD-grown SiO₂ generated using different occupation probabilities for the precursor-derived surface species P1 and P2 (pP1 and pP2). These variations in occupation probability lead to distinct network structures, illustrating how different reaction pathways influence the final atomic arrangement of the deposited SiO₂ film.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The simulated structures demonstrate how different reaction-pathway occupation probabilities influence the atomic arrangement of the final SiO₂ film. By adjusting pP1 and pP2, researchers can examine how precursor chemistry, ligand exchange, and plasma-driven reactions modify the network topology. These structural insights are important for predicting material properties such as density, uniformity, porosity, and defect incorporation, ultimately helping optimize PEALD process parameters to achieve high-quality SiO₂ films.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The occupation probabilities pP1 and pP2.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Distribution of Si–O–Si linkages, Local atomic arrangement and connectivity, Density of network motifs derived from P1 and P2 pathways, Degree of structural heterogeneity, Overall topology of the deposited SiO₂ film\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1006,"height":420}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/Martin Becker et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1006,"height":420,"image_format":"jpeg","image_sha256":"fb52d33c3a7e83ec10a173550404cecb9b1c208be4e6c3e8ee4139bfd1e515c1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_28_fig_9.jpg","caption":"Fig. 9. Examples of bridged structures of surface sites.","id":"train/atomic-layer-deposition/simulation-usecase/28/fig_9","sample_id":"atomic-layer-deposition/simulation-usecase/28/fig_9","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":32,"y":55,"width":336,"height":105},{"panel_id":"b","x":425,"y":0,"width":336,"height":160},{"panel_id":"c","x":17,"y":218,"width":333,"height":163},{"panel_id":"d","x":400,"y":220,"width":329,"height":161}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/Maxim Deminsky et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":761,"height":381,"image_format":"jpeg","image_sha256":"91d35a3b7f07bb80c2a5d3c73cb523566f6826bea583f58c210c5ead643a50fd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_1.jpg","caption":"Figure 1. Top view of the unit cell of $\\mathrm{a - SiO}_2$ models (a) A.1 and (b) A.2 used in this study and (c) idealized $\\alpha$ -quartz model Q.1 used previously and most often. The numbers 1-6 denote the oxygen atoms of the surface silanol groups. $\\mathrm{Si - OH}$ groups with the same numbers on both A.1 and A.2 are bound to the same silicon atoms of the underlying $\\mathrm{SiO}_2$ framework. An RBO species is present on A.2. Color code: Si - blue, O - red, H - white. See Figure S1 for a side view of the surface models.","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Top view of the silanol-rich amorphous silica model (A.1) containing six surface silanols (labeled 1–6) at a density of 5.07 silanols per nm².\"},{\"panel_id\":\"b\",\"text\":\"Top view of the silanol-reduced amorphous silica model (A.2) containing four surface silanols (labeled 2, 4, 5, 6) at a density of 3.38 silanols per nm², plus a reactive bridge oxygen (RBO) species.\"},{\"panel_id\":\"c\",\"text\":\"Top view of the idealized α-quartz model (Q.1) containing only two distinguishable geminal silanol species (labeled 1, 2) at a much higher density of 9.34 silanols per nm².\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Figure | Silanols per nm² |\\n| --- | --- |\\n| A.1 | 5.07 |\\n| A.2 | 3.38 |\\n| Q.1 | 9.34 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Amorphous silica better represents experimental conditions and enables qualitatively different chemistry. The lower silanol density and irregular distribution on a-SiO₂ allow TB SMI configurations that cannot form on α-quartz. Additionally, α-quartz contains only geminal silanols with fixed distances, whereas a-SiO₂ features individual silanols with unique chemical environments affecting reactivity.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Both models share the same basic framework and unit cell parameters (a = 1.072 nm, b = 1.104 nm), differing only in silanol density and RBO presence.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Q.1 has 9.34 silanols per nm², which is nearly twice that of A.1 (5.07) and almost three times that of A.2 (3.38).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"RBO (reactive bridge oxygen) is a strained Si−O−Si bond that reacts instantaneously with Al precursors (activation barrier <10 kJ mol⁻¹), making it a major source of unwanted growth nucleation.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":7,"width":234,"height":245},{"panel_id":"b","x":238,"y":4,"width":225,"height":250},{"panel_id":"c","x":463,"y":5,"width":209,"height":247}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":672,"height":253,"image_format":"jpeg","image_sha256":"ade183d132a2d02285b5dd894d611fb0e77a3b99166b3bd009f315aefb8ea08b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_11.jpg","caption":"Figure 11. Overview of the TS geometries of the LER of TEA with the bonds shown in Scheme 3: (a) RBO opening, (b) $\\mathrm{Si}_{\\mathrm{SMI}} - \\mathrm{O}_{\\mathrm{surf}}$ bond disintegration, (c) C-O bond intersection, and (d) methoxy- $\\mathrm{Si}_{\\mathrm{SMI}}$ intersection. The relevant $\\mathrm{Si}_{\\mathrm{SMI}}$ atoms are colored lighter blue.","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_11","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_11","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Transition state geometry for RBO opening reaction with TEA, showing the Al precursor attacking the strained Si−O−Si bridge oxygen.\"},{\"panel_id\":\"b\",\"text\":\"Transition state geometry for Si_SMI−O_surf bond disintegration, showing TEA attacking the bond connecting the SMI silicon to the surface oxygen, with a pentavalent Si_SMI intermediate.\"},{\"panel_id\":\"c\",\"text\":\"Transition state geometry for C−O bond intersection at an unreacted methoxy group, where the methyl group transfers from oxygen to the TEA ethyl ligand.\"},{\"panel_id\":\"d\",\"text\":\"Transition state geometry for methoxy−Si_SMI intersection, showing TEA approaching the Si_SMI center to form a pentavalent transition state while displacing the methoxy group.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The lighter blue silicon atom is Si_SMI: the silicon atom from the TMPS inhibitor molecule, as distinguished from the darker blue surface silicon atoms.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Bulkier precursors would experience greater steric repulsion when forming transition states within the SMI layer, further increasing activation barriers through the \\\"reactivity reduction\\\" effect.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Reactions (b) and (d) both involve formation of a pentavalent transition state at the Si_SMI center, which requires significant displacement of the SMI's substituents (propyl and methoxy groups). In a dense blocking layer, this displacement invokes repulsive forces with neighboring SMIs. Reactions (a) and (c) involve smaller structural changes (attacking an RBO or transferring a small methyl group) with lower spatial requirements.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Reaction (b), the Si_SMI−O_surf disintegration, directly breaks the bond anchoring the SMI to the surface, potentially detaching the inhibitor molecule.\"}]}]","bbox":[{"panel_id":"a","x":10,"y":10,"width":309,"height":290},{"panel_id":"b","x":348,"y":13,"width":313,"height":282},{"panel_id":"c","x":8,"y":317,"width":314,"height":277},{"panel_id":"d","x":345,"y":315,"width":313,"height":279}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":663,"height":600,"image_format":"jpeg","image_sha256":"4922d268ea7e331f00fc6a3322a9d97536d32578700b7333759363b8e0fc075b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_13.jpg","caption":"Figure 13. Reactions within the SMI blocking layer. (a and b) Crosslinking reaction of two adjacent SMIs within the A.1-O:13/56/2/4 configuration in side view for the initial and final states, respectively, of the reaction. (c and d) LER at the cross-linking oxygen with TEA with the initial and final states, respectively. Activation and reaction energies in $\\mathrm{kJ}\\mathrm{mol}^{-1}$ . Dispersion in parenthesis.","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_13","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_13","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Initial state of the cross-linking reaction showing two adjacent SMIs within the A.1-O:13/56/2/4 blocking layer configuration (3.4 SMI/nm²). The two SMIs each bear a hydroxyl group (formed from methoxy hydrolysis during water pulse) positioned to undergo a condensation reaction.\"},{\"panel_id\":\"b\",\"text\":\"Final state of the cross-linking reaction where the two SMIs are connected via an Si-O-Si bridge with release of water. The reaction has a moderate activation barrier (ΔE_A = 106 kJ/mol) and is slightly endothermic (ΔE_R = 7 kJ/mol). Values in parentheses show dispersion contributions.\"},{\"panel_id\":\"c\",\"text\":\"Initial state showing TEA (green aluminum atom with ethyl ligands) adsorbed at the cross-linking oxygen that connects two SMIs within the blocking layer.\"},{\"panel_id\":\"d\",\"text\":\"Final state after ligand exchange reaction where TEA has broken the cross-linking Si-O bond. The reaction has an activation barrier of 127 kJ/mol and is nearly thermoneutral (ΔE_R = -1 kJ/mol). The negative dispersion contributions indicate the product is destabilized relative to the reactant.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Cross-linking is an equilibrium reaction dependent on water concentration. During a water pulse, high water concentration shifts the equilibrium toward the reactants (separate hydroxyl-bearing SMIs), breaking any existing cross-links. During the subsequent vacuum or precursor pulse phase, the entropic gain from releasing water shifts the equilibrium toward the cross-linked product. Thus, cross-linked SMI structures are more likely to exist during precursor pulses when they could potentially enhance blocking capacity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The color code is: blue spheres represent silicon atoms, red spheres represent oxygen atoms, gray spheres represent carbon atoms, white spheres represent hydrogen atoms, and green spheres represent aluminum atoms (in TEA).\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No. TEA can break the cross-linking bond with an activation barrier of 127 kJ/mol, and since the reaction is reversible (ΔE_R = -1 kJ/mol), the cross-link reforms after precursor purging. Cross-linking has no net impact on AS-ALD selectivity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TEA attack barrier (127 kJ/mol) is higher than the cross-link formation barrier (106 kJ/mol), but both are within the range accessible under typical ALD conditions at 180°C.\"}]}]","bbox":[{"panel_id":"a","x":14,"y":16,"width":312,"height":275},{"panel_id":"b","x":357,"y":14,"width":308,"height":282},{"panel_id":"c","x":11,"y":323,"width":315,"height":279},{"panel_id":"d","x":357,"y":326,"width":308,"height":275}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":669,"height":606,"image_format":"jpeg","image_sha256":"0d8e1987be8536cdebee13978dadf1202826d9cb441dac1a7502cbda3b677358","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_2.jpg","caption":"Figure 2. Specific adsorption configurations for TMPS on $\\mathrm{a - SiO_2}$ . Panels a and c depict the side and top views, respectively, of the A.2- O:245 configuration. The positions of the bonding silanols are marked, as well as the free $\\mathrm{Si - OH}$ (O6) and the RBO species. Panels b and d depict the side and top views, respectively, of A.1-O:123/56/4. C-bonded H atoms have been omitted for the sake of clarity.","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Side view of the A.2-O:245 configuration showing a triply bonded (TB) TMPS molecule attached to silanol positions O2, O4, and O5 on the A.2 amorphous silica surface. The free silanol at O6 and the reactive bridge oxygen (RBO) species are labeled. The TB configuration requires significant framework distortion due to the large inter-silanol distances on A.2.\"},{\"panel_id\":\"b\",\"text\":\"Side view of the A.1-O:123/56/4 full coverage configuration on the A.1 surface. This shows three SMIs: a TB-TMPS at positions O1, O2, O3; a DB-TMPS at positions O5, O6; and an SB-TMPS at position O4. All six surface silanols are blocked by this arrangement.\"},{\"panel_id\":\"c\",\"text\":\"Top view of the A.2-O:245 configuration, showing the spatial arrangement of the TB-TMPS bonding to three silanols (O2, O4, O5), the free silanol O6, and the RBO beneath the blocking layer.\"},{\"panel_id\":\"d\",\"text\":\"Top view of the A.1-O:123/56/4 configuration, illustrating how three SMIs achieve full silanol coverage on the A.1 surface. The numbered positions show the silanol bonding sites for each SMI.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The A.1-O:123/56/4 configuration provides superior coverage because it blocks all six surface silanols using three SMIs in a combination of TB, DB, and SB bonding modes. In contrast, A.2-O:245 leaves O6 unblocked and retains a reactive RBO species beneath the layer. The unblocked silanol and RBO in A.2-O:245 represent potential nucleation sites for Al precursors, which would reduce AS-ALD selectivity.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The large inter-silanol distances on A.2 prevent formation of stable multiply bonded configurations that would include O6, and the existing TB-TMPS at O2,O4,O5 sterically blocks access to O6 by additional TMPS molecules.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"RBO stands for Reactive Bridge Oxygen, a strained Si-O-Si surface species that forms when two adjacent silanols condense. It is highly reactive toward both Al precursors and water.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The naming convention encodes the surface model and SMI bonding arrangement. \\\"A.1\\\" refers to the silanol-rich amorphous silica model with six surface silanols. The numbers after \\\"O:\\\" indicate which silanol positions each SMI occupies, separated by slashes for different SMI molecules. Thus \\\"123/56/4\\\" means one SMI bonds to O1, O2, and O3 (triply bonded), another bonds to O5 and O6 (doubly bonded), and a third bonds only to O4 (singly bonded).\"}]}]","bbox":[{"panel_id":"a","x":9,"y":5,"width":325,"height":331},{"panel_id":"b","x":340,"y":2,"width":320,"height":329},{"panel_id":"c","x":3,"y":342,"width":327,"height":348},{"panel_id":"d","x":342,"y":339,"width":320,"height":353}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":663,"height":698,"image_format":"jpeg","image_sha256":"509e35069b95fc3e9a4474b89d9bcb884dd95cc0e5231875849b85b860a6ed3a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_5.jpg","caption":"Figure 5. TMPS reacting with the RBO species on A.2. (a) The initial (PS) and (b) final (SB SMI and methoxy group) state of the reaction are shown. Adsorption, activation, and reaction energies $\\left(\\Delta E_{\\mathrm{ads}}, \\Delta E_{\\mathrm{A}},\\right.$ and $\\left.\\Delta E_{\\mathrm{R}},\\right.$ respectively) in $\\mathrm{kJ} \\mathrm{mol}^{-1}$ .","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Initial precursor state (PS) showing TMPS adsorbed near the reactive bridge oxygen (RBO) on the A.2 amorphous silica surface. The adsorption is strongly exothermic (ΔE_ads = -100 kJ/mol), with dispersion interactions contributing -65 kJ/mol. The RBO is the strained Si-O-Si bridge visible in the surface framework.\"},{\"panel_id\":\"b\",\"text\":\"Final state after the RBO opening reaction, showing two products: a singly bonded (SB) TMPS and a methoxy group directly attached to a surface silicon atom. The reaction has a very low activation barrier (ΔE_A = 26 kJ/mol, with zero dispersion contribution) and is strongly exothermic (ΔE_R = -127 kJ/mol).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Although this reaction removes the highly reactive RBO and forms an SB-SMI, it also creates a methoxy group bonded directly to a surface silicon atom. During the first water pulse, this methoxy group undergoes hydrolysis to form a new free silanol within the blocking layer. If no adjacent SMI substituents shield this silanol, it becomes an accessible nucleation site for Al precursors in subsequent cycles, initiating unwanted Al₂O₃ growth on the non-growth surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The RBO opening barrier (26 kJ/mol) is much lower than the first condensation reaction with surface silanols (TS I = 142 kJ/mol), making RBO opening kinetically highly favorable when TMPS can access the RBO.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Not necessarily. Since surface silanols protrude into the vacuum and can form hydrogen bonds with TMPS methoxy groups, the blocking layer may build up without TMPS reaching the RBOs located closer to the surface. In this case, unreacted RBOs would remain beneath the SMI layer, where they could later react with Al precursors that penetrate the blocking layer, causing selectivity loss.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The values in parentheses indicate the dispersion energy contribution (ΔE_disp) to each energy term, showing how van der Waals interactions contribute to adsorption, activation, and reaction energetics.\"}]}]","bbox":[{"panel_id":"a","x":7,"y":12,"width":317,"height":266},{"panel_id":"b","x":358,"y":11,"width":311,"height":268}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":670,"height":280,"image_format":"jpeg","image_sha256":"c13eea895c9285a63b33ccc7fb8271eceabd7fa3bf5887b5ca901238b6259e16","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_7.jpg","caption":"Figure 7. Top view of the SLM. The blue ellipsoid marks the SMI at position O2 chosen as fragment in the pEDA. Double-pointed arrows indicate the SMI's interactions with the surrounding SMIs within the SLM.","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Top view of the SMI Layer Model (SLM) used for pEDA calculations to quantify inter-SMI interactions. The central SMI at position O2 (marked by blue ellipse) is selected as the fragment, and the double-pointed arrows indicate its interactions with neighboring SMIs in the layer. Each SMI shows the characteristic structure with a silicon atom (blue), oxygen atoms (red), carbon atoms (gray), and hydrogen atoms (white). The surface slab has been removed to create the SLM for analyzing SMI-SMI interactions independent of surface effects.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Position O2 was chosen because the SMI there adopts a singly bonded (SB) configuration in all full coverage models studied, ensuring consistent comparison across different SMI layer densities with the same number of unreacted methoxy groups.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The pEDA decomposes the interaction energy between the central SMI and surrounding layer into electronic and dispersion components. At densities up to 3.4 SMI/nm², the overall interaction is attractive (ΔE_int = -36 kJ/mol), with dispersion attraction outweighing electronic repulsion. At 4.2 SMI/nm², however, Pauli repulsion (474 kJ/mol) overwhelms dispersion attraction (-132 kJ/mol), resulting in a net repulsive interaction (+27 kJ/mol) that destabilizes the layer.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The analysis reveals a theoretical upper SMI density limit below 4.2 SMI/nm², set by Pauli repulsion when SMIs become too densely packed for electrons to avoid each other.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The color code is: blue spheres for silicon atoms, red spheres for oxygen atoms, gray spheres for carbon atoms, and white spheres for hydrogen atoms.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":3,"width":604,"height":572}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":611,"height":578,"image_format":"jpeg","image_sha256":"85bc02a6a8e914ff574021f0eca7cbb455532e24e08164f11132c4dffd29ba26","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_8.jpg","caption":"Figure 8. Two possible configurations of DB-O:13 on A.1 that differ in the orientation of the unreacted groups of TMPS. (a) The conformer can form TB-O:123, because the methoxy group is directly above the O2 silanol (blue circle). (b) The conformer cannot react with O2, and the SMI propyl group screens the Si-OH group from reacting with an additional TMPS molecule (red circle). (c) PS of MTMS with the free O2 silanol of the A.1-O:13/56/4 configuration. (d) Product of MTMS with the Si-OH at O2 of the A.1-O:13/56/4 configuration. The $\\Delta E_{\\mathrm{A}}$ and $\\Delta E_{\\mathrm{R}}$ values are given with respect to the energy of the adsorbate structure $(\\Delta E_{\\mathrm{ads}})$ . Values in parentheses state the dispersion contribution to that respective energy. All energies in kJ $\\mathrm{mol}^{-1}$ .","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_8","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"DB-O:13 conformer on A.1 where the unreacted methoxy group (blue circle) is oriented directly above the O2 silanol. This positioning allows the third condensation to form TB-O:123. The adsorption energy is -44 kJ/mol with -22 kJ/mol dispersion contribution. This conformer is 15 kJ/mol more stable than the one in (b).\"},{\"panel_id\":\"b\",\"text\":\"Alternative DB-O:13 conformer where the propyl tail group (red circle) points toward O2, sterically blocking access. This orientation prevents both TB formation and adsorption of additional TMPS molecules at O2, leaving it as a potential nucleation site for Al precursors.\"},{\"panel_id\":\"c\",\"text\":\"Precursor state showing MTMS (a monofunctional alkoxysilane) adsorbed at the free O2 silanol within the A.1-O:13/56/4 blocking layer configuration. The adsorption energy is -22 kJ/mol, dominated by dispersion (-113 kJ/mol), indicating the electronic contribution is actually unfavorable (+91 kJ/mol).\"},{\"panel_id\":\"d\",\"text\":\"Product state after MTMS condenses with the O2 silanol, blocking the previously exposed site. The reaction has a high activation barrier (ΔE_A = 151 kJ/mol) and is slightly endothermic (ΔE_R = 6 kJ/mol). Values in parentheses show dispersion contributions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Figure | ΔE_ads |\\n| --- | --- |\\n| a) | -44 (-22) |\\n| b) | -29 (-13) |\\n| c) | -22 (-113) |\\n| d) | +151 (-37)
+6 (+20) |\"},{\"panel_id\":\"b\",\"text\":\"| Figure | ΔE_ads |\\n| --- | --- |\\n| a) | -44 (-22) |\\n| b) | -29 (-13) |\\n| c) | -22 (-113) |\\n| d) | +151 (-37)
+6 (+20) |\"},{\"panel_id\":\"c\",\"text\":\"| Figure | ΔE_ads |\\n| --- | --- |\\n| a) | -44 (-22) |\\n| b) | -29 (-13) |\\n| c) | -22 (-113) |\\n| d) | +151 (-37)
+6 (+20) |\"},{\"panel_id\":\"d\",\"text\":\"| Figure | ΔE_ads |\\n| --- | --- |\\n| a) | -44 (-22) |\\n| b) | -29 (-13) |\\n| c) | -22 (-113) |\\n| d) | +151 (-37)
+6 (+20) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The conformational freedom of the DB-SMI allows different orientations of unreacted groups. In favorable conformations like panel (a), the methoxy group points toward nearby silanols enabling further condensation. However, unfavorable conformations like panel (b) orient the propyl tail toward the remaining silanol, sterically blocking it from both TB formation and reaction with additional TMPS molecules. Even though the favorable conformer is more stable by 15 kJ/mol, some fraction of unfavorable conformers will exist, leaving silanols exposed.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"MTMS is smaller than TMPS and can access silanols that are sterically blocked from additional TMPS molecules, allowing complete silanol coverage through sequential pulsing of trifunctional and monofunctional inhibitors.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The MTMS barrier (151 kJ/mol) is slightly higher than the first TMPS condensation (TS I = 142 kJ/mol), suggesting extended soak times may be needed for optimal coverage by the second SMI.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The blue circle in (a) highlights the methoxy group positioned to react with O2, while the red circle in (b) highlights the propyl group that sterically blocks access to the O2 silanol.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":4,"width":323,"height":278},{"panel_id":"b","x":352,"y":6,"width":311,"height":274},{"panel_id":"c","x":3,"y":294,"width":327,"height":274},{"panel_id":"d","x":345,"y":294,"width":318,"height":270}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":666,"height":570,"image_format":"jpeg","image_sha256":"ade33ef12d3a90a5a07dd2f7848370ec927e66422716badfc4f3e113f0aeefd5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_42_fig_2.jpg","caption":"Fig. 2 Ti precursors covering the $\\mathrm{TiO_2(110)}$ surface. In the presence of methoxy groups, the precursor cannot adsorb to one of every three rows of the adsorption sites due to the steric hindrance. (a and b) Those rows are denoted by black arrows. If methoxy groups are replaced with hydroxyl groups, the steric hindrance is alleviated and the precursor can adsorb to every row of the adsorption sites. (c) White, emerald, red, and gray spheres represent hydrogen, carbon, oxygen, and titanium atoms, respectively. Blue lines represent the periodic boundary used in calculations.","id":"train/atomic-layer-deposition/simulation-usecase/42/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/42/fig_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":12,"y":43,"width":399,"height":322},{"panel_id":"b","x":430,"y":46,"width":397,"height":326},{"panel_id":"c","x":846,"y":37,"width":257,"height":331}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/Yeonchoo Cho et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1109,"height":373,"image_format":"jpeg","image_sha256":"8a0ad393b0c48aa4dcc3b483e6ddee9d3d95cc2f386e3d7fa20149436104c93c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_43_figure_4.jpg","caption":"Figure 4. (a) Snapshots of ReaxFF-MD simulations for $\\mathrm{Al}_2\\mathrm{O}_3$ ALD using $\\mathrm{TMA / H_2O}$ sequential doses on a $\\mathrm{GeO_x(5\\AA) / Ge(100)}$ slab at $1000~\\mathrm{K}$ . Duration of each dose was 500 ps. In the snapshot of the first TMA dose, the highlighted molecules (1 and 2) are byproducts of $\\mathrm{CH}_4$ and $\\mathrm{H}_3\\mathrm{C} - \\mathrm{CH}_3$ . (b) ReaxFF-NEB calculation for TMA adsorption on the $\\mathrm{GeO_x / Ge}$ surface. (c) Number of O atoms coordinated to Ge during the ReaxFF-MD simulation of $\\mathrm{Al}_2\\mathrm{O}_3$ ALD on $\\mathrm{GeO_x / Ge}$ .","id":"train/atomic-layer-deposition/simulation-usecase/43/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/43/figure_4","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"reaction energy profile diagram"},{"panel_id":"c","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"b\",\"text\":\"The graph represents the Energy profile for a computation (ReaxFF-MD) simulations for Al2O3 ALD using TMA/H2O sequential doses on a GeOx(5 Å)/Ge(100) slab at 1000 K, the chemical reaction where a trimethylaluminum (TMA) molecule adsorbs onto a germania (Ge-O-*) surface site, forming an adsorbed Ge-O-Al(CH₃)₂ complex while releasing a methane (CH₄) molecule.\"},{\"panel_id\":\"c\",\"text\":\"This figure is a stacked graph showing the evolution of Germanium (Ge) coordination number (CN) to Oxygen over time during a simulated ALD process. It tracks the structure through two TMA doses and one H₂O dose, showing how the GeOx interface changes as Al₂O₃ deposition proceeds.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Energy [eV] | reaction state |\\n|----------------|--------------------|\\n| 0.0 | Initial State |\\n| -0.1 | Transition state | \\n| -3.02 |Final state |\"},{\"panel_id\":\"c\",\"text\":\"| Time (ns) | Counts (%) | CN |\\n|-----------|------------|-----|\\n| 0 | 13.38 | 1 |\\n| 0 | 10.8 | 2 |\\n| 0 | 17.68 | 3 |\\n| 0 | 48.11 | 4 |\\n| 0 | 9.75 | 5 |\\n| 0.5 | 12.64 | 1 |\\n| 0.5 | 13.69 | 2 |\\n| 0.5 | 37.35 | 3 |\\n| 0.5 | 34.15 | 4 |\\n| 0.5 | 0.1 | 5 |\\n| 1 | 10.86 | 1 |\\n| 1 | 16.5 | 2 |\\n| 1 | 42.39 | 3 |\\n| 1 | 29.11 | 4 |\\n| 1 | 0.1 | 5 |\\n| 1.5 | 10.86 | 1 |\\n| 1.5 | 18.3 | 2 |\\n| 1.5 | 37.35 | 3 |\\n| 1.5 | 32 | 4 |\\n| 1.5 | 0.1 | 5 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"0-0.5 ns: First TMA exposure.\\n\\n0.5-1.0 ns: Second TMA exposure.\\n\\n1.0-1.5 ns: H₂O exposure. The key control parameter is the coordination number (CN) of Ge atoms to O atoms. It monitors the structural evolution of the GeOx interlayer, indicating oxidation state changes and intermixing during ALD.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SiO₂ barrier layer is preferable. Direct ALD on GeOx leads to dynamic intermixing and a broad, unstable GeOx/Al₂O₃ interface with variable Ge oxidation states (CN 1-5), which are potential charge traps. A thin SiO₂ provides a more chemically stable, passivating interface with Ge, preventing this intermixing and resulting in lower interfacial defect density.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the process requires sufficient thermal energy to overcome the ~3 eV barrier, justifying the high simulation temperature of 1000 K used to model the reaction kinetics. However, the exothermic nature confirms the reaction is thermodynamically favorable and will proceed to completion once activated, forming a stable Al-O-Ge linkage that anchors the Al₂O₃ film to the substrate.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thin GeOx layer makes the surface more reactive than a fully oxidized SiO₂ surface. The Ge-O-* bond is weaker than a Si-O-* bond due to germanium's lower electronegativity, making the oxygen more basic and nucleophilic. This likely lowers the initial energy state for the TMA molecule, contributing to a different (potentially lower) overall reaction barrier for the first ALD half-cycle on this surface.\"}]}]","bbox":[{"panel_id":"a","x":19,"y":16,"width":595,"height":618},{"panel_id":"b","x":3,"y":691,"width":320,"height":233},{"panel_id":"c","x":344,"y":684,"width":253,"height":241}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/Yuanxia Zheng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":617,"height":928,"image_format":"jpeg","image_sha256":"86d31c35cc8f45000dfb5b7dea847bd78e5407bd3bbe236796b8c3c3d9006863","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_43_figure_5.jpg","caption":"Figure 5. ReaxFF-MD simulations for oxygen diffusion from $\\mathrm{GeO_x}$ into underlying Ge subsurface for $\\mathrm{GeO_x / Ge(100)}$ (red) and $(\\mathrm{Al}_2\\mathrm{O}_3 / \\mathrm{GeO}_x)$ /Ge(100) (blue) interfaces. Calculations were performed at 800 K to accelerate the oxygen diffusion effect within 2 ns. The portion of oxygen diffusion was normalized by the total number of oxygen atoms in the $\\mathrm{GeO_x}$ layer.","id":"train/atomic-layer-deposition/simulation-usecase/43/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/43/figure_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays calculated potential energy profiles (ReaxFF-NEB) for Al₂O₃ ALD surface reactions on Ge(100). Panel (a) shows the reaction of trimethylaluminum (TMA) with a passivated H-terminated surface, exhibiting an energy barrier of 1.41 eV. (not quantitative)\"},{\"panel_id\":\"b\",\"text\":\"Panel (b) shows the thermodynamically unfavorable reaction of water (H₂O) on the same surface. (not quantitative)\"},{\"panel_id\":\"c\",\"text\":\"Panel (c) contrasts this behavior with the reaction on a Ge dangling-bond defect, which proceeds via barrier-less, spontaneous adsorption followed by ligand elimination.The line chart illustrates the percentage of oxygen diffusion over time for two different systems: GeOx/Ge and [Al2O3/GeOx]/Ge.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"| Time (ns) | Oxygen Diffusion (%) | Structure |\\n|-----------|-----------------------|------------|\\n| 0 | 0 | GeOₓ/Ge |\\n| 0 | 0 | [Al₂O₃/GeOₓ]/Ge |\\n| 0.5 | 12.2 | GeOₓ/Ge |\\n| 0.5 | 6.05 |[Al₂O₃/GeOₓ]/Ge |\\n| 1 | 12.3 | GeOₓ/Ge |\\n| 1 | 8.28 | [Al₂O₃/GeOₓ]/Ge |\\n| 1.5 | 18.62 | GeOₓ/Ge |\\n| 1.5 | 10.31 | [Al₂O₃/GeOₓ]/Ge |\\n| 2 | 20.77 | GeOₓ/Ge |\\n| 2 | 10.4 | [Al₂O₃/GeOₓ]/Ge |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Spontaneous adsorption of TMA onto the Ge dangling bond (Ge-*).\\n\\nLigand exchange with a neighboring $Ge-H*$ site to eliminate methane (CH4).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The GeOₓ/Al₂O₃ bilayer provides far better stability by suppressing oxygen exchange. The trade-off is increased process complexity and the risk of introducing new defects at the Al₂O₃/GeOₓ interface during capping layer deposition.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The dense, chemically stable Al₂O₃ capping layer drastically reduces the oxygen diffusion rate. This is because it presents a kinetic barrier that impedes the transport pathways for oxygen atoms, effectively sealing the interface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. By preventing oxygen loss from or ingress into the critical GeOₓ/Ge interface, the Al₂O₃ cap helps maintain stable interface composition and low defect density, which is essential for preserving channel mobility and threshold voltage stability during subsequent thermal steps.\"}]}]","bbox":[{"panel_id":"a","x":31,"y":3,"width":532,"height":207},{"panel_id":"b","x":11,"y":240,"width":551,"height":202},{"panel_id":"c","x":106,"y":456,"width":355,"height":279}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/Yuanxia Zheng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":566,"height":736,"image_format":"jpeg","image_sha256":"9b7eff2b5afc6812e42e8bcb77fee8e42203b52c3fae48e08a46df982e09d1a2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_1.jpg","caption":"Figure 1. Cluster models used to represent reactive sites on the $\\mathrm{SiO_2}$ surface: (a) $\\mathrm{Si(OH)_3 - OH}$ cluster used to represent isolated surface $-\\mathrm{OH}$ groups, (b) $\\mathrm{(SiH_3O)_3Si - OH}$ cluster used to represent isolated surface $-\\mathrm{OH}$ groups, (c) $\\mathrm{Si(OH)_3 - O - Si(OH)_3}$ cluster used to represent adjacent hydrogen-bonded $-\\mathrm{OH}$ groups, and (d) cluster used to represent siloxane bridge sites on the $\\mathrm{SiO_2}$ surface.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":43,"y":45,"width":132,"height":134},{"panel_id":"b","x":288,"y":8,"width":243,"height":183},{"panel_id":"c","x":0,"y":245,"width":228,"height":137},{"panel_id":"d","x":326,"y":268,"width":205,"height":101}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":531,"height":398,"image_format":"jpeg","image_sha256":"f2972626b5100a331256a9f8791d0894ad34465112ec2f6c351aacf3325f2e64","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_11.jpg","caption":"Figure 11. Atomic mechanism of the reaction between $\\mathrm{TiCl_4}$ and oxygen bridge sites: (a) reactant complex, (b) formation of the $\\mathrm{Ti - O}$ bond and a 5-coordinated Ti, (c) breaking of the $\\mathrm{Ti - Cl}$ bond, (d) transition state structure, (e) relaxation of the structure, and (f) product complex.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_11","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_11","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":13,"y":343,"width":213,"height":262},{"panel_id":"b","x":99,"y":6,"width":209,"height":221},{"panel_id":"c","x":350,"y":26,"width":211,"height":199},{"panel_id":"d","x":439,"y":348,"width":221,"height":220},{"panel_id":"e","x":661,"y":9,"width":218,"height":208},{"panel_id":"f","x":729,"y":334,"width":281,"height":250}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1017,"height":625,"image_format":"jpeg","image_sha256":"004bdd62adfa5ddf1cc28fc9dc1dc5cf301797cbf5deff4d90082e9bdde3c2be","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_13.jpg","caption":"Figure 13. Atomic mechanism of the $\\mathrm{H}_2\\mathrm{O} + \\mathrm{SiO}_2 - \\mathrm{Cl}^*$ reaction: (a) adsorbed reactant complex, (b) first transition state structure, (c) reaction intermediate, (d) second transition state structure, and (e) adsorbed product complex.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_13","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_13","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":240,"width":250,"height":169},{"panel_id":"b","x":188,"y":16,"width":205,"height":171},{"panel_id":"c","x":408,"y":238,"width":216,"height":159},{"panel_id":"d","x":611,"y":1,"width":208,"height":167},{"panel_id":"e","x":783,"y":233,"width":191,"height":184}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":975,"height":431,"image_format":"jpeg","image_sha256":"79e8ac20b899b7c851e750356e73d0aac72749fb0df90d4c615aa152ca6f9e6d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_2.jpg","caption":"Figure 2. Atomic mechanism of the reaction between $\\mathrm{TiCl_4}$ and the isolated surface $-\\mathrm{OH}$ group: (a) reactant complex, (b) formation of the $\\mathrm{Ti - O}$ bond and the 5-coordinated $\\mathrm{Ti}$ , (c) transition state structure, (d) formation of the $\\mathrm{H - Cl}$ bond, and (e) product complex.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":240,"width":228,"height":298},{"panel_id":"b","x":161,"y":7,"width":240,"height":233},{"panel_id":"c","x":360,"y":296,"width":241,"height":239},{"panel_id":"d","x":564,"y":8,"width":229,"height":237},{"panel_id":"e","x":764,"y":272,"width":268,"height":244}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1036,"height":573,"image_format":"jpeg","image_sha256":"e704e1d8ec9e4699b75b5b7b017ef006d563bc623bf0a48dcdd6b05727b56d65","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_4.jpg","caption":"Figure 4. Adsorbed complex structures optimized at the B3LYP/6-31G(d,p) level of theory. RC1, RC2, and RC3 are the three different adsorption modes of $\\mathrm{H_2O}$ on the $\\mathrm{SiO_2 - O - Ti(OH)_3^*}$ surface site.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_4","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":6,"width":192,"height":263},{"panel_id":"b","x":248,"y":41,"width":202,"height":230},{"panel_id":"c","x":493,"y":41,"width":176,"height":228}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":669,"height":270,"image_format":"jpeg","image_sha256":"2ec350a9997043c56a3963d9afef48cc29943abfe8b7e9dc80dbc05ec66fc3aa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_7.jpg","caption":"Figure 7. Distorted geometries predicted by using the $\\mathrm{Si(OH)_3 - OH^*}$ cluster.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":20,"width":173,"height":204},{"panel_id":"b","x":239,"y":8,"width":176,"height":202},{"panel_id":"c","x":483,"y":0,"width":184,"height":213}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":669,"height":241,"image_format":"jpeg","image_sha256":"0ac78ab3027127fe4698516a7ccb3f2bb484a76b192c0e15889d6bb19a81a429","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_8.jpg","caption":"Figure 8. Atomic mechanism of the reaction between $\\mathrm{TiCl_4}$ and adjacent hydrogen-bonded hydroxyl groups on the $\\mathrm{SiO_2}$ surface: (a) adsorption on a single hydroxyl group, (b) transition state structure for $\\mathrm{TiCl_4}$ diffusion between the two adsorption states, (c) adsorption on the bridge site, (d) transition state structure, (e) transition state structure, (f) product complex, (g) product complex, (h) surface intermediate after the desorption of $\\mathrm{HCl}$ , (i) transition state structure, (j) product complex, and (k) surface intermediate after the desorption of $\\mathrm{HCl}$ .","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_8","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"},{"panel_id":"h","label":"molecular structure diagram"},{"panel_id":"i","label":"molecular structure diagram"},{"panel_id":"j","label":"molecular structure diagram"},{"panel_id":"k","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":301,"width":215,"height":225},{"panel_id":"b","x":151,"y":4,"width":204,"height":198},{"panel_id":"c","x":276,"y":288,"width":177,"height":186},{"panel_id":"d","x":456,"y":2,"width":179,"height":196},{"panel_id":"e","x":433,"y":585,"width":190,"height":211},{"panel_id":"f","x":704,"y":3,"width":192,"height":188},{"panel_id":"g","x":704,"y":588,"width":224,"height":202},{"panel_id":"h","x":535,"y":307,"width":169,"height":170},{"panel_id":"i","x":779,"y":303,"width":171,"height":174},{"panel_id":"j","x":960,"y":13,"width":195,"height":166},{"panel_id":"k","x":1007,"y":308,"width":158,"height":166}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1170,"height":827,"image_format":"jpeg","image_sha256":"0a5f177f961de370f81eda17db764f86f2cf73a2de32cf2677d8dd272b836247","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_45_fig_1.jpg","caption":"Fig. 1. Perspective views of (a) the optimized BDEAS and (b) a fully OH-terminated Si (0 0 1) surface with the electron density distribution. The Si atom is positively charged and the N and H atoms are negatively charged in BDEAS. The O atom is negatively charged and the H atom is positively charged in $-\\mathrm{OH}$ on the Si (0 0 1) surface.","id":"train/atomic-layer-deposition/simulation-usecase/45/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/45/fig_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":144,"y":8,"width":389,"height":205},{"panel_id":"b","x":3,"y":246,"width":668,"height":223}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/Seung-Bin Baek et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":669,"height":486,"image_format":"jpeg","image_sha256":"56581a158d2ad87cfb7c274641d63762d2688fc05eabba743a9928819462af33","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_49_fig_1.jpg","caption":"Fig. 1 The optimized structures for (a) adsorption state, (b) transition state and (c) reaction state of a $\\mathrm{B}_2\\mathrm{H}_6$ on the TiN (001) surface.","id":"train/atomic-layer-deposition/simulation-usecase/49/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/49/fig_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure shows the adsorption state of the B₂H₆ reaction pathway on a TiN(001) surface, where the molecule is physisorbed at a distance of 3.59 Å.\"},{\"panel_id\":\"b\",\"text\":\"The subfigure illustrates the transition state of the reaction pathway, where the molecule approaches the surface (2.99 Å) to facilitate activation.\"},{\"panel_id\":\"c\",\"text\":\"The subfigure depicts the final reaction state (chemisorption), where the B–B bond has dissociated, and the resulting BH₃ fragments are bonded to the nitrogen atoms of the surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TiN serves as a critical glue or barrier layer for the Atomic Layer Deposition (ALD) of Tungsten (W) in memory devices. The B2H6 precursor acts as a reducing agent in the W ALD process, and its ability to dissociate on the underlying TiN surface directly influences the nucleation density and quality of the subsequent Tungsten film. Understanding these surface-dependent reaction mechanisms is essential for controlling film texture and preventing defects like voids or seams in high-aspect-ratio contacts.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dissociated BH3 species bond to the Nitrogen (N) atoms (represented by the blue spheres) on the surface.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sequence illustrates the dissociative chemisorption mechanism of diborane (B2H6) on a TiN surface. The process initiates with the B2H6 molecule loosely physisorbed above the surface (a), progresses through a transition state where the molecule approaches the surface to lower the activation barrier (b), and concludes with the cleavage of the B–B bond, resulting in two separate BH3 fragments adsorbed on the surface (c).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The vertical distance decreases from 3.59 Å in the adsorption state to 2.99 Å in the transition state.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":279,"height":444},{"panel_id":"b","x":284,"y":4,"width":307,"height":447},{"panel_id":"c","x":590,"y":22,"width":290,"height":423}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":886,"height":478,"image_format":"jpeg","image_sha256":"c2c23db180bcdadbc038cbe0f1d8727a573c497843ceb4590e15fc3bfec9f03d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_49_fig_3.jpg","caption":"Fig. 3 The optimized structures for (a) adsorption state, (b) transition state and (c) reaction state of a $\\mathrm{B}_2\\mathrm{H}_6$ on the Ti-terminated TiN (111) surface.","id":"train/atomic-layer-deposition/simulation-usecase/49/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/49/fig_3","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure shows the adsorption state of a diborane (B₂H₆) molecule on a Ti-terminated TiN(111) surface. Unlike on the (001) surface, the molecule interacts strongly with the Titanium atoms (yellow spheres).\"},{\"panel_id\":\"b\",\"text\":\"The subfigure depicts the transition state where the B–B bond is elongated, facilitating the dissociation process.\"},{\"panel_id\":\"c\",\"text\":\"The subfigure illustrates the reaction state (chemisorption), where the B₂H₆ has dissociated into two borane (BH₃) molecules. These BH₃ fragments are adsorbed onto the hollow sites formed by three Titanium atoms.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure illustrates the dissociative chemisorption of diborane. It begins with the adsorption of the B₂H₆ precursor on the Ti-rich surface (a), proceeds through a transition state characterized by B–B bond activation (b), and results in the cleavage of the molecule into two BH₃ fragments that chemically bond to the surface titanium atoms (c).\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dissociated BH₃ molecules adsorb onto the hollow sites formed by three Titanium (Ti) atoms (yellow spheres).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In Figure 1 on the TiN(001) surface, the BH₃ fragments bonded to the Nitrogen atoms. In contrast, on the Ti-terminated TiN(111) surface shown here, the BH₃ fragments preferentially bond to the Titanium atoms (specifically in the 3-fold hollow sites). This difference in binding site contributes to the different reactivities and energies observed between the two crystal orientations.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":1,"y":3,"width":213,"height":225},{"panel_id":"b","x":217,"y":4,"width":230,"height":230},{"panel_id":"c","x":448,"y":6,"width":212,"height":225}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":664,"height":255,"image_format":"jpeg","image_sha256":"62b812f55f2629867a8cab7aa1cb010f57823918b93cf9287787ea212bd5f39a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_49_fig_5.jpg","caption":"Fig. 5 The optimized structures for (a) adsorption state, (b) transition state and (c) reaction state of a $\\mathrm{B}_2\\mathrm{H}_6$ on the N-terminated TiN (111) surface.","id":"train/atomic-layer-deposition/simulation-usecase/49/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/49/fig_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure shows the adsorption state of a diborane (B2​H6) molecule on an N-terminated TiN(111) surface, interacting at a distance of 3.28 Å.\"},{\"panel_id\":\"b\",\"text\":\"The subfigure depicts the transition state, where the molecule moves closer to the surface (2.45 Å) and the B–B bond begins to stretch.\"},{\"panel_id\":\"c\",\"text\":\"The subfigure illustrates the final reaction state, which is unique compared to other surfaces: the B2​H6 dissociates into surface-bound B​Hx species bonded to Nitrogen atoms, while simultaneously releasing a hydrogen molecule (H2) into the gas phase (seen as the isolated pair of purple spheres).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A hydrogen molecule (H2) represented by the pair of purple spheres floating away from the surface.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They bond to the Nitrogen (N) atoms, represented by the blue spheres in the lattice.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface is considered the most efficient because it facilitates not only the strong adsorption of Boron species (bonding to N) but also the spontaneous removal of hydrogen as H2 gas. This self-cleaning mechanism reduces residual hydrogen content in the film and results in a stable, boron-rich surface that serves as an excellent nucleation layer for the subsequent Tungsten deposition.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The distance decreases from 3.28 Å in the adsorption state to 2.45 Å in the transition state.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":5,"width":216,"height":293},{"panel_id":"b","x":224,"y":7,"width":224,"height":290},{"panel_id":"c","x":445,"y":9,"width":220,"height":294}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":667,"height":322,"image_format":"jpeg","image_sha256":"37dc9d773478ef502bbd9740b20b29253fa1c3234ab228a3e234787db67b8513","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_52_fig_1.jpg","caption":"Fig. 1 The optimized initial, transition, final structures for the first dissociative reaction step of $\\mathrm{WF}_6$ on the N-terminated TiN (111) surface.","id":"train/atomic-layer-deposition/simulation-usecase/52/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/52/fig_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the first dissociation step of WF₆ on a TiN surface. Three structures are shown: initial, transition, and final states. Bond breaking and surface bonding are illustrated using atomic models.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the final state, one fluorine atom is no longer symmetrically coordinated to tungsten. The W–F bond is elongated and broken relative to the initial structure. This shows that fluorine has transferred toward the surface while tungsten binds more strongly.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The transition state (TS).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It decreases.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-It defines the kinetic barrier\\n-It controls reaction rate\\n-It determines temperature requirements\\n-It predicts precursor efficiency\"}]}]","bbox":[{"panel_id":"a","x":0,"y":8,"width":1048,"height":496}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1053,"height":506,"image_format":"jpeg","image_sha256":"0d388f65f1653970196db160a5dd5de9f96fc81f2582a3c2d2d6533a489d6eae","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_52_fig_3.jpg","caption":"Fig. 3 The optimized initial, transition, final structures for the first dissociative reaction step of $\\mathsf{WF}_6$ on the B-covered N-terminated TiN (111) surface.","id":"train/atomic-layer-deposition/simulation-usecase/52/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/52/fig_3","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the optimized atomic structures corresponding to the initial state (IS), transition state (TS), and final state (FS) of the first dissociative reaction step of WF₆ on a B-covered, N-terminated TiN (111) surface. The structures illustrate how the presence of surface boron modifies the interaction between the WF₆ molecule and the substrate during bond dissociation. Annotated distances highlight changes in adsorption geometry and bond activation along the reaction pathway.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Boron atoms on the N-terminated TiN surface alter the local chemical environment by changing available adsorption sites and electronic interactions. During the dissociative adsorption of WF₆, boron affects how the molecule approaches the surface and how W–F bonds are activated. This modification can influence both the geometry of the transition state and the stabilization of reaction intermediates.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The transition state (TS).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the initial state, WF₆ interacts weakly with the surface and remains relatively distant, indicating physisorption or weak chemisorption. In the final state, at least one fluorine atom has dissociated and stronger bonding between tungsten and surface atoms is observed. This change reflects a transition from molecular adsorption to chemically bound reaction products influenced by boron coverage.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Surface modifiers like boron can tune precursor reactivity.\\n-They may suppress or promote bond breaking during deposition.\\n-Understanding this helps control film composition and impurity incorporation.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":10,"width":1032,"height":459}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1033,"height":475,"image_format":"jpeg","image_sha256":"2f56f5e1d8d07c2867596553139ce8e0ec1a07a0358c01e1ce27414913247b76","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_52_fig_5.jpg","caption":"Fig. 5 W adatom diffusion from atop (IS) to sub-layer (FS): (a) top and side views of W adatom on B-covered N-terminated TiN (111) surfaces. (b) Energy profile.","id":"train/atomic-layer-deposition/simulation-usecase/52/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/52/fig_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows top and side views of a W adatom diffusing from an atop surface site (IS) into a sub-layer position (FS) on a B-covered, N-terminated TiN (111) surface. The atomic configurations illustrate the structural rearrangement associated with subsurface incorporation.\"},{\"panel_id\":\"b\",\"text\":\"The figure presents a schematic energy profile along the W diffusion pathway, highlighting the transition state, activation barrier, and the strong energetic stabilization of the sub-layer final state relative to the initial surface configuration.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The initial configuration shows the W adatom adsorbed at an atop surface site, interacting primarily with surface atoms. In the final configuration, the W atom occupies a subsurface position beneath the top layer, indicating successful diffusion. The comparison of top and side views highlights both lateral displacement and vertical incorporation during the diffusion process.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- It affects metal incorporation depth and interface formation.\\n- It influences film density and microstructural evolution.\\n- It can impact electrical and mechanical properties of the deposited film.\\n- It provides insight into long-term diffusion-driven stability or degradation.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 0.43 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The final sub-layer state is significantly more stable than the initial surface state, as indicated by the large negative reaction energy. This strong energetic driving force suggests that once the activation barrier is overcome, subsurface incorporation of W is thermodynamically favored.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":3,"width":699,"height":500},{"panel_id":"b","x":732,"y":129,"width":461,"height":331}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1198,"height":539,"image_format":"jpeg","image_sha256":"fe238612267ee06e9ae2877e447c6c5548365ef8bbab981bae9927b7b23bdc35","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_10.jpg","caption":"Figure 10. BP86/SV(P) optimized geometries of bound reactants, transition state, and bound products structures for $\\mathrm{SiH}_2\\mathrm{DMA}_2$ with (a) $(\\mathrm{Si}_3\\mathrm{N}_4)_4(\\mathrm{NH}_3)_12$ as a model for silicon nitride growth and (b) $(\\mathrm{Si}_3\\mathrm{N}_4)_4(\\mathrm{H}_2\\mathrm{O})_{12}$ as a model for silicon oxide growth.","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_10","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":20,"y":6,"width":639,"height":251},{"panel_id":"b","x":22,"y":274,"width":639,"height":203}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":666,"height":480,"image_format":"jpeg","image_sha256":"9912bcbe2d89d2f29d388edd09a83459b948d419f6d3ce368f2b4e8f5a7a2152","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_12.jpg","caption":"Figure 12. Structures of chemisorbed $\\mathrm{SiH}_2\\mathrm{DMA}_2$ product (UP) on (a) $(\\mathrm{Si}_3\\mathrm{N}_4)_4(\\mathrm{H}_2\\mathrm{O})_{12}$ and (b) $(\\mathrm{Si}_3\\mathrm{N}_4)_4(\\mathrm{NH}_3)_{12}$ clusters.","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_12","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":73,"y":7,"width":383,"height":253},{"panel_id":"b","x":9,"y":265,"width":448,"height":239}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":461,"height":508,"image_format":"jpeg","image_sha256":"45946068dd2ee11dcd40dc866c9a6f8aa5b784cf28666e9b7f384a8e47b5d089","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_5.jpg","caption":"Figure 5. Molecular structures of some of the silicon precursors considered in this work. Structures were optimized using BP86/ TZVPP. The silicon atoms are represented by yellow spheres, carbon by gray, hydrogen by white, nitrogen by dark blue, oxygen by red, chlorine by green, and fluorine by light blue.","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image displays molecular structures of various silicon precursors\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Figure | Structure |\\n| --- | --- |\\n| a | SiH₂(NH₂)₂ |\\n| b | SiH₂(OH)₂ |\\n| c | SiH₄ |\\n| d | SiH₂Cl₂ |\\n| e | SiH₂(CH₃)₂ |\\n| f | SiH₂DMA₂ |\\n| g | SiH₂HFMA₂ |\\n| h | DIPAS |\\n| i | SiH₂EMA₂ |\\n| j | BDEAS |\\n| k | BTBAS |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. SiH2Cl2\\n2. SiH2HFMA2\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiH2EMA2, BDEAS, BTBAS and DIPAS are commercially available amino-silane precursors that could be potentially used in the ALD of SiO2 and Si3N4\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The molecules SiH2(NH2)2, SiH2DMA2 and SiH2HFMA2 were selected as model amino-silanes in order to observe the effect of changing R′ and R″ on the alkylamide functional groups\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The molecular structures for a selection of silicon precursors and the molecules (SiH2(NH2)2 and SiH2(OH)2 respectively) employed to model the silicon nitride and oxide surfaces were optimized using BP86/TZVPP\"}]}]","bbox":[{"panel_id":"a","x":1,"y":0,"width":575,"height":762}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":578,"height":764,"image_format":"jpeg","image_sha256":"f15e454d3eb6deca284597e06661733ebe867a24ba477fc5590cc1f4ace68172","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_7.jpg","caption":"Figure 7. DFT-optimized structures of the transition states for the reactions of $\\mathrm{SiH}_2(\\mathrm{NH}_2)_2$ and $\\mathrm{SiH}_2\\mathrm{DMA}_2$ silicon precursors with $\\mathrm{SiH}_3\\mathrm{-NH - SiH}_3,$ $\\mathrm{SiH}_3\\mathrm{-NH}_2,$ and $\\mathrm{SiH}_3\\mathrm{-OH}$ surface models. The silicon atoms are represented by yellow spheres, hydrogen by white, nitrogen by blue, oxygen by red, and carbon by gray. The bonds of the 4-membered ring transition state are highlighted in yellow.","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image displays various molecular structures of the transition states for the reactions of SiH2(NH2)2 and SiH2DMA2 silicon precursors with SiH3−NH−SiH3, SiH3−NH2, and SiH3−OH surface models\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Precursor | Si₃–NH–Si₃ Surface | Si₃–NH₂ Surface | Si₃–OH Surface |\\n|-------------------|----------------------|-------------------|-----------------|\\n| SiH₂(NH₂)₂ | Present | Present | Present |\\n| SiH₂DMA₂ | Present | Present | Present |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For these transition states a planar, “kite”-shaped 4-membered ring is found between the O/N and H of the surface model molecule and the N and Si of the incoming precursors.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. The silicon atoms are represented by yellow spheres\\n2. Hydrogen atoms are white\\n3. Nitrogen atoms are marked in blue\\n4. Oxygen atoms are red\\n5. Carbon is gray\\n6. The bonds of the 4-membered ring transition state are highlighted in yellow.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Although the precursors may approach SiH3−OH vertically to form a transition state, a side-on approach of the precursors is necessary for the SiH3−NH2 due to the orientation of the amine hydrogen atoms. This seems to reflect the direction of the lone pair on O and N, respectively\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":547,"height":417}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":553,"height":422,"image_format":"jpeg","image_sha256":"5c4c48d844788084353b18f54db03ba7ee3265f2adb1c07f7dbd928b5b22303b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_9.jpg","caption":"Figure 9. $(\\mathrm{Si}_3\\mathrm{N}_4)_4$ cluster model (upper center) with $\\mathrm{NH}_2 / \\mathrm{H}$ terminated $(\\mathrm{Si}_3\\mathrm{N}_4)_4(\\mathrm{NH}_3)_12$ cluster (lower left) and $\\mathrm{OH} / \\mathrm{H}$ terminated $(\\mathrm{Si}_3\\mathrm{N}_4)_4(\\mathrm{H}_2\\mathrm{O})_{12}$ cluster (lower right).","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_9","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image depicts the moleculat structure of various cluster models, Si3​N4​)4​ cluster model with NH2/HNH2​/H terminated (Si3N4)4(NH3)12(Si3​N4​)4​(NH3​)1​2 cluster (lower left) and OH/HOH/H terminated (Si3N4)4(H2O)12(Si3​N4​)4​(H2​O)12​ cluster (lower right).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Base Structure | Modification Added | Resulting Structure Formula |\\n|---------------------|--------------------------|--------------------------------------|\\n| (Si₃N₄)₄ | + 12 × NH₂ + 12 × H⁺ | (Si₃N₄)₄(NH₃)₁₂ |\\n| (Si₃N₄)₄ | + 12 × OH⁻ + 12 × H⁺ | (Si₃N₄)₄(H₂O)₁₂ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The geometries of both (Si3N4)4(H2O)12 and (Si3N4)4(NH3)12 clusters were optimized using the BP86 DFT functional and SV(P) basis set\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A cylindrical silicon nitride cluster consisting of 4 Si3N4 stoichiometric units (Si12N16 with 28 atoms) was constructed based on the chemically stable, β-phase crystal structure with hexagonal symmetry.18 To this bare cluster were added 12 NH2 − anions and 12 H+ cations, terminating the uncoordinated Si and N atoms, respectively, on the outside of the cluster. This had the effect of adding 12 NH3 molecules to the cluster, retaining the neutral charge of the cluster. This (Si3N4)4(NH3)12 cluster (Si12N16H12(NH2)12 with 76 atoms)was used to model ALD reactions of silicon precursors at a Si3N4 surface\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The model used for reactions at a silicon oxide surface was constructed with 12 OH− and 12 H+ fragments (i.e., 12 H2O molecules) were added to the Si12N16 cluster resulting in a (Si3N4)4(H2O)12 cluster (Si12N16H12(OH)12 with 64 atoms)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":1,"width":658,"height":497}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":661,"height":500,"image_format":"jpeg","image_sha256":"b23dfb5b58c8b7df37c574e26708d21d37f3b71c517f680aefa801bc674100f3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_14.jpg","caption":"Figure 14. The effect of temperature on the migration of $-\\mathrm{OH}$ on the $\\mathrm{Al}_2\\mathrm{O}_3$ surfaces: (a) starting surface, (b) surface after the MD simulation at $300^{\\circ}\\mathrm{C}$ for $500\\mathrm{ps}$ and (c) surface after the MD simulation at $150^{\\circ}\\mathrm{C}$ for $500\\mathrm{ps}$ .","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_14","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_14","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows the initial Al₂O₃ surface with –OH groups before simulation. Most –OH groups are located near the surface. The structure is compact and ordered.\"},{\"panel_id\":\"b\",\"text\":\"The image shows the surface after MD simulation at 300 °C for 500 ps. Several –OH groups appear displaced along the surface. The surface looks more rearranged.\"},{\"panel_id\":\"c\",\"text\":\"The image shows the surface after MD simulation at 150 °C for 500 ps. –OH movement is more limited. The structure remains closer to the initial state.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It shows the starting configuration of the hydroxylated Al₂O₃ surface before any thermal simulation is applied.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It appears more ordered, resembling the initial state more closely.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Compared to the starting surface, the 300 °C snapshot shows a more disordered arrangement of surface atoms and hydroxyl groups. The arrows highlight specific –OH species that have migrated significantly from their original positions, indicating that the higher thermal energy has overcome energy barriers for surface diffusion and rearrangement.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Greater at 300 °C.\"}]}]","bbox":[{"panel_id":"a","x":11,"y":34,"width":618,"height":187},{"panel_id":"b","x":4,"y":261,"width":624,"height":165},{"panel_id":"c","x":4,"y":449,"width":623,"height":162}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":630,"height":617,"image_format":"jpeg","image_sha256":"7919a758fc398c48f71cd9a37ad97252756ddfd58a617fa6cced304f7aded5bb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_56_ad18a71f7bf8dfd010afc39c6588160d3abeabbd3d0579c72e4d575a2b72ad6d.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/56/ad18a71f7bf8dfd010afc39c6588160d3abeabbd3d0579c72e4d575a2b72ad6d","sample_id":"atomic-layer-deposition/simulation-usecase/56/ad18a71f7bf8dfd010afc39c6588160d3abeabbd3d0579c72e4d575a2b72ad6d","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":7,"width":672,"height":360}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/ad18a71f7bf8dfd010afc39c6588160d3abeabbd3d0579c72e4d575a2b72ad6d.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/ad18a71f7bf8dfd010afc39c6588160d3abeabbd3d0579c72e4d575a2b72ad6d.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/Bo Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"not_found"},"width":681,"height":369,"image_format":"jpeg","image_sha256":"ab2e0b8cbd18afca53c38c296bd3e6a68687714f93e7a7f20c0990ea983bc8fc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_56_figure_1.jpg","caption":"Figure 1. Optimized structure of the hydroxylated $\\mathrm{SiO}_2(001)$ surface: a) side view, b) top view.","id":"train/atomic-layer-deposition/simulation-usecase/56/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/56/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":8,"width":354,"height":123},{"panel_id":"b","x":4,"y":178,"width":352,"height":273}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/Bo Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":361,"height":483,"image_format":"jpeg","image_sha256":"6b2134e49d1917f8785e8109437ddfd9cba24cc4f159f2347b0f8e0a3afecf06","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_56_figure_2.jpg","caption":"Figure 2. (a) Optimized structure of BTBAS. (b) Charge density of the BTBAS molecule.","id":"train/atomic-layer-deposition/simulation-usecase/56/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/56/figure_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"heatmap"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":82,"y":42,"width":262,"height":303},{"panel_id":"b","x":437,"y":8,"width":471,"height":333}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/Bo Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":911,"height":345,"image_format":"jpeg","image_sha256":"8e154111b791e66e7b72495a3b07da8fbbdfd2dd4f1134bc39c436385c9a7f6c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_56_figure_5.jpg","caption":"Figure 5. Optimized initial, transition, and final structures of the dissociative chemisorption of step 2 of BTBAS chemisorption for (a) path a and (b) path b. The green balls represent the migrating H atom.","id":"train/atomic-layer-deposition/simulation-usecase/56/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/56/figure_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":23,"y":18,"width":651,"height":174},{"panel_id":"b","x":20,"y":208,"width":653,"height":152}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/Bo Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":675,"height":361,"image_format":"jpeg","image_sha256":"22d51438775130686d666ede321cb2ae885f361127ed358c52f6dbfbc7ca7d08","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_56_figure_8.jpg","caption":"Figure 8. Optimized initial, transition, and final structures of the sequential surface oxidation steps along path b: (a) step 1, (b) step 2.","id":"train/atomic-layer-deposition/simulation-usecase/56/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/56/figure_8","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":18,"y":15,"width":657,"height":168},{"panel_id":"b","x":7,"y":199,"width":670,"height":177}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/Bo Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":678,"height":377,"image_format":"jpeg","image_sha256":"eee01353e9babccd974ef34710e3064b29d73f648b7fb66852bbf60bf0719b81","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_57_figure_1.jpg","caption":"Figure 1. Top and side view representations of the clusters: black, gallum; orange, sulfur; gray, carbon; blue, nitrogen; white, hydrogen; green, hydrogen atom saturators $(Z_{\\mathrm{H}})$","id":"train/atomic-layer-deposition/simulation-usecase/57/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/57/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":2,"width":1398,"height":537}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/C. Goehry et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1409,"height":536,"image_format":"jpeg","image_sha256":"9b4877fced5926c39433d572b5334e623cd66a3967ec90225aeed83346cc560f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_57_figure_7.jpg","caption":"Figure 7. Detail of the D06 intermediate. Atoms are represented in black (gallium), orange (sulfur), and white (hydrogen). The thiol group bound to adsorbed Ga center is oriented toward other surface thiol groups and not perpendicular to the surface.","id":"train/atomic-layer-deposition/simulation-usecase/57/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/57/figure_7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":1,"width":326,"height":205}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/C. Goehry et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":330,"height":206,"image_format":"jpeg","image_sha256":"1fa56367d58b46ed3a190adcb22fa07a42af397403e23c7e0fb85be46428b568","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_b8962f195f2705366d924a9db291df51a90a6fddc60d55997caaefafaf49ec70.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/8/b8962f195f2705366d924a9db291df51a90a6fddc60d55997caaefafaf49ec70","sample_id":"atomic-layer-deposition/simulation-usecase/8/b8962f195f2705366d924a9db291df51a90a6fddc60d55997caaefafaf49ec70","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":5,"width":613,"height":299}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/b8962f195f2705366d924a9db291df51a90a6fddc60d55997caaefafaf49ec70.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/b8962f195f2705366d924a9db291df51a90a6fddc60d55997caaefafaf49ec70.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"not_found"},"width":614,"height":300,"image_format":"jpeg","image_sha256":"1068f2d98f54579f8d43a3fc07b3086c67b7023775e85902a0143c2856c62334","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_1.jpg","caption":"Figure 1. Two-dimensional approximation of the lattice network of kMC used here to illustrate the reaction network on the lattice framework. The actual lattice is 3D, and the first neighbors of a given site i share only one neighbor in common instead of two as is depicted here. The lattice is subject to periodic boundary conditions. The metal and oxygen sites alternate in the lattice (metal sites are colored by light gray, oxygen sites with red). Each zinc and oxygen site is four-coordinated in a tetrahedral configuration. Each site is defined by its location in the lattice, type, cn, and neighbor list. The cn is shown below each lattice box. The bottom row in the figure is the bulk-phase (Zn with cn 4). The bulk is inert, i.e., no process is defined for sites with cn 4. Initially, the surface is covered with low-coordinated hydroxyl groups. Above the surface is the gas phase that is initially filled with vacant (VAC) lattice sites. As the deposition process continues, the simulation produces a crystalline $\\mathrm{ZnO}$ lattice with some lattice defects.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":4,"width":439,"height":266}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":444,"height":272,"image_format":"jpeg","image_sha256":"4b920b6607966831882c12988f7d76988b466dd70db4cf922043a2a32ecda4b2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_14.jpg","caption":"Figure 14. Side profile from the thin film deposited at temperatures 27 and $152^{\\circ}\\mathrm{C}$ . From the simulated trajectories, the amount of ethyl- ligands persisting in the film is large even at high temperatures. This creates defects into the film as the ethyl-ligands mask some of the neighboring sites and lead to impurities within the grown film. In reality, the ethyl-ligands are not likely to stay as ethyl-ligands within the substructure of the film but convert to other by-products or impurities.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_14","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_14","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":342,"y":8,"width":329,"height":259},{"panel_id":"a","x":3,"y":101,"width":331,"height":166}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":672,"height":266,"image_format":"jpeg","image_sha256":"4c39e9bf39201a5cd4be614b295d6b9107e3beb217b54777a1273c279d0f0615","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_2.jpg","caption":"Figure 2. Lattce model ilustration for the adsorption of DEZ onto a hydroxyl group in eq 9. DEZ adsorption invokes the mask function, which decreases the cn of the neighboring zinc and oxygen sites by $-10$ The mask function allows tracking how many DEZ/MEZ groups are within the vicint of a given site, and an oxygen site may be rendered inaccessible to DEZ adsorption if surrounded by too many ligands. See section Steric Hindrance and Densification for further details.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":1,"width":847,"height":204}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":850,"height":206,"image_format":"jpeg","image_sha256":"9e4c29760b8922a09fc168bb64821d68f75ba6b679e2783866707082de527341","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_3.jpg","caption":"Figure 3. Illustration of the ligand elimination reaction between an adsorbed DEZ and a neighboring hydroxyl group.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_3","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":4,"width":843,"height":200}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":847,"height":206,"image_format":"jpeg","image_sha256":"e1f2967dab7fbf4cf3df25eb9fbcd1ae28018d6f5d571f03230e11aec82e8599","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_4.jpg","caption":"Figure 4. Densification of $\\mathrm{ZnX}$ group from the oxygen sublattice to the zinc sublattice. The $\\mathrm{ZnX}$ group has a choice between the two vacant sites denoted by VAC.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_4","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"c","x":1,"y":514,"width":842,"height":222},{"panel_id":"b","x":3,"y":258,"width":844,"height":246},{"panel_id":"a","x":1,"y":2,"width":844,"height":246}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":847,"height":736,"image_format":"jpeg","image_sha256":"b267124900d16916fdc0a17f3aa008724ef29280c877eff1c953e799c08b1227","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_5.jpg","caption":"Figure 5. Example case of the process leading to ethyl-saturation during the DEZ pulse and the use of the mask function. (a) DEZ adsorbs to an oxygen site close to the MEZ. (b) DEZ reacts with a surface oxygen site. One of the ethyl-ligands is removed, resulting in another MEZ species on the surface. (c) New MEZ needs to densify to the zinc sublattice. However, because of the presence of another $\\mathrm{ZnX}$ group, the new MEZ has a choice of two possible vacant sites. The barrier to the vacant site with $\\mathrm{cn} - 10$ is lower than that for the vacant site with $\\mathrm{cn} - 20$ , and hence, the MEZ prefers the site with $\\mathrm{cn} - 10$ and prefers to distance itself from the other MEZ group.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":5,"width":843,"height":199}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":847,"height":206,"image_format":"jpeg","image_sha256":"fdb73a691ce8d37e4ea487d668e2b033245b66d40d187348b900f20db10ca6f7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_7.jpg","caption":"Figure 7. Illustration of the $\\mathrm{ZnO}$ surface from above during the initial ALD cycle at elevated temperature. The size of simulation box in this figure is one-quarter of the simulation box used in the production simulations. (a) Initial configuration, water covered zinc oxide surface and (b) surface after DEZ saturation. Surface is covered with MEZ. The effect of the mask function can be seen here, as the ethyl-ligands tend to avoid one another when densifying to the zinc sublattice. Some of the MEZ remain nondensified. (c) Surface shortly after the beginning of the water pulse. Several ethyl-ligands have already been eliminated. (d) Surface after the water pulse. Some MEZ remain on the surface even after the water pulse, and these ligand fragments are called persistent ligands.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":36,"y":31,"width":274,"height":343},{"panel_id":"b","x":302,"y":16,"width":369,"height":360},{"panel_id":"c","x":38,"y":397,"width":249,"height":353},{"panel_id":"d","x":384,"y":397,"width":239,"height":353}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":672,"height":750,"image_format":"jpeg","image_sha256":"402f9ddb817c5ac203593b5e8f2e78b4024535631427bba7829099bcb2b689aa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_8.jpg","caption":"Figure 8. Side view of the $\\mathrm{ZnO}$ surface during the initial ALD cycle. The labels $(\\mathsf{a} - \\mathsf{d})$ correspond to the same stages of the initial ALD cycle as in Figure 7. The formation of the new atomic layer can be clearly seen. After the water pulse, some ethyl-ligands remain on the surface and are not eliminated within the ALD cycle.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_8","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":328,"y":29,"width":294,"height":120},{"panel_id":"b","x":9,"y":181,"width":288,"height":108},{"panel_id":"c","x":11,"y":57,"width":284,"height":92},{"panel_id":"d","x":328,"y":197,"width":284,"height":92}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":622,"height":289,"image_format":"jpeg","image_sha256":"08ad77ee5200125ba62ae20f238fc076254a717f65d49ee69b302bae0e65a968","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_9_figure_1.jpg","caption":"Figure 1. Cubic cell of hafnia deposited on the $\\mathrm{Si / SiO_2}$ substrate functionalized with hydroxyl groups.","id":"train/atomic-layer-deposition/simulation-usecase/9/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/9/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a hafnia (HfO₂) unit attached to a hydroxylated Si/SiO₂ surface. Surface hydroxyl groups act as bonding sites where hafnium atoms attach through oxygen atoms. This creates Hf–O–Si linkages at the interface between the substrate and the oxide film. The structure represents an early stage of HfO₂ nucleation during atomic layer deposition and explains how bonding starts at the surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1) Provide reactive bonding sites\\n, 2) Enable Hf–O bond formation\\n, 3) Anchor the first hafnia units to the surface\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Hf–O–Si bonds connect the hafnia film directly to the silicon oxide surface. These bonds improve adhesion and reduce weak or broken bonds at the interface. A stable interface helps prevent charge traps that can affect device performance.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Reduces interface defects\\n, -Improves electrical stability\\n, -Helps control leakage current\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The structure shows hafnium atoms bonding to surface oxygen atoms from hydroxyl groups. This creates stable Hf–O links that hold the first oxide units in place. Once these initial bonds form, further ALD cycles can build the film layer by layer. This explains how growth starts uniformly at the surface.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":601,"height":540}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/A. Dkhissi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":605,"height":545,"image_format":"jpeg","image_sha256":"87a30430069724f090cf78fc5e69a58bf35d7c39174cdcf159ed0d82f3fb0521","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_9_figure_3.jpg","caption":"Figure 3. Noncrystalline $-\\mathrm{O} - \\mathrm{HfCl}_3$ groups chemisorbed on the hydroxylated $\\mathrm{Si / SiO_2}$ . This is the KMC model structure","id":"train/atomic-layer-deposition/simulation-usecase/9/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/9/figure_3","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a KMC model structure where noncrystalline –O–HfCl₃ groups are attached to a hydroxylated Si/SiO₂ surface. The silicon substrate forms the base, while oxygen atoms link the surface to a hafnium center. Three chlorine atoms remain bonded to hafnium, showing incomplete ligand removal. The structure is irregular and does not form a repeating pattern, which represents the early stage of chemisorption before the film becomes dense or ordered during further ALD or ALE cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Hydroxyl groups on the surface act as reactive sites. They allow the hafnium center to form strong Hf–O bonds after chlorine ligands are partly replaced. This reaction anchors the metal species to the surface and starts the growth process for the oxide film.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Irregular atom spacing\\n, -No repeating unit\\n, -Uneven bonding angles\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Because the bonding is uneven, some areas react faster than others. This can cause a short delay before steady growth begins. As more cycles occur, the surface becomes more uniform and growth stabilizes.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":1,"width":567,"height":428}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/A. Dkhissi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":570,"height":434,"image_format":"jpeg","image_sha256":"7fd97fcc8e1026c8718c8e3355d2d5f57e6c1598882ec0fea734df22775c4e98","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_42_figure_7.jpg","caption":"Figure 7. Possible four-center transition states for (a) TMA with $\\mathrm{AlF}_3$ ; (b) TMA with $\\mathrm{ZrF}_4$ ; (c) DMAC with $\\mathrm{ZrF}_4$ ; and (d) $\\mathrm{SiCl}_4$ with $\\mathrm{ZrF}_4$ .","id":"train/atomic-layer-etching/experimental-usecase/42/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/42/figure_7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":0,"width":295,"height":359},{"panel_id":"b","x":378,"y":0,"width":293,"height":372},{"panel_id":"c","x":1,"y":396,"width":293,"height":353},{"panel_id":"d","x":359,"y":392,"width":308,"height":357}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/Selectivity in Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":672,"height":756,"image_format":"jpeg","image_sha256":"efc95fe218ca233262cb7fcca5cbf80452498ee75a147de136c4cf08c1a9f28f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_13_fig_2.jpg","caption":"FIG. 2. Schematic of the cell used for molecular dynamics simulations. The filled circles represent Cl atoms and the open circles represent Si atoms.","id":"train/atomic-layer-etching/simulation-usecase/13/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/13/fig_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":6,"width":666,"height":322}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/Molecular dynamics simulation of atomic layer etching of silicon.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":675,"height":325,"image_format":"jpeg","image_sha256":"79ed13b32418f8eb45dd26371871e0376478275398cb6b95277d08f515cd7676","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_2_fig_1.jpg","caption":"Fig. 1. Electron density difference plots after a) the adsorption of an $\\mathbb{F}_2$ molecule on top of an S atom and b) the adsorption of an F atom on top of an S atom of $\\mathrm{MoS_2}$ . Red lobules correspond to regions of charge accumulation $(+0.01$ contour) whereas blue lobules correspond to charge depletion regions $(-0.01$ contour).","id":"train/atomic-layer-etching/simulation-usecase/2/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/2/fig_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":43,"width":328,"height":266},{"panel_id":"b","x":0,"y":416,"width":328,"height":223}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/Ab-initio molecular dynamics simulations of the reactivity of MoS2 towards F2 molecules.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":328,"height":639,"image_format":"jpeg","image_sha256":"2f1b6a3d04a252b6b3722bc067f9a7e45bf337105806c02ab3aa3a13c6752d62","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_2_fig_3.jpg","caption":"Fig. 3. a) Initial surface structures containing 6 $\\mathrm{SF}_x$ groups in the unit cells; b) Energy profiles for each structure at 100, 300 K, and 500 K; c) Snapshot after 15 ps for the simulation starting for the structure initially having 6 $\\mathrm{SF}_3$ groups.","id":"train/atomic-layer-etching/simulation-usecase/2/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/2/fig_3","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"multi spectra chart"},{"panel_id":"e","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":197,"height":190},{"panel_id":"b","x":234,"y":4,"width":193,"height":183},{"panel_id":"c","x":463,"y":4,"width":171,"height":186},{"panel_id":"d","x":44,"y":259,"width":592,"height":424},{"panel_id":"e","x":87,"y":686,"width":471,"height":318}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/Ab-initio molecular dynamics simulations of the reactivity of MoS2 towards F2 molecules.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":636,"height":1005,"image_format":"jpeg","image_sha256":"d7fb06052a41270ea9165d793cfeac13ab4acd859732efeea3f01665328b2ebc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_2_fig_4.jpg","caption":"Fig. 4. Trajectories of F atoms on the surface plane show the dynamics of the different surface groups as a function of temperature. The $\\mathrm{MoS_2}$ unit cells contain a) six SF groups, b) six $\\mathrm{SF_2}$ groups and c) six $\\mathrm{SF_3}$ groups.","id":"train/atomic-layer-etching/simulation-usecase/2/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/2/fig_4","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":2,"width":1270,"height":398},{"panel_id":"b","x":8,"y":406,"width":1250,"height":361},{"panel_id":"c","x":8,"y":762,"width":1261,"height":344}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/Ab-initio molecular dynamics simulations of the reactivity of MoS2 towards F2 molecules.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1270,"height":1119,"image_format":"jpeg","image_sha256":"8c60e96c7cbeccb8617c2ad65401c85f122d5bf1ec2641b0e1a08c2078969112","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_2_fig_6.jpg","caption":"Fig. 6. a) Snapshots of AIMD simulation at $1000\\mathrm{K}$ starting from a surface composition having 1 SF group, $10\\mathrm{SF}_2$ groups, and $1\\mathrm{SF}_3$ group in the unit cell. A desorbed $\\mathrm{SF}_3$ species begins to abstract an F atom at $1.715\\mathrm{ps}$ to yield an $\\mathrm{SF}_4$ molecule at $1.922\\mathrm{ps}$ . b) Total energy profile (black curve) and averaged profile (red curve) for better appreciation of energy changes.","id":"train/atomic-layer-etching/simulation-usecase/2/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/2/fig_6","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"spectra chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":4,"width":643,"height":1024},{"panel_id":"b","x":6,"y":1038,"width":643,"height":464}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/Ab-initio molecular dynamics simulations of the reactivity of MoS2 towards F2 molecules.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":650,"height":1511,"image_format":"jpeg","image_sha256":"2766f1c40fc391da59d44e24d11ae2574143556cdd74a86bec510c31011c5f6a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_2_fig_7.jpg","caption":"Fig. 7. a) Snapshots of AIMD simulation at $1500\\mathrm{K}$ started with the final structure reached after 5 ps at $1000\\mathrm{K}$ (Fig. 6). b) Total energy (black curve) and smoothed profile (red curve).","id":"train/atomic-layer-etching/simulation-usecase/2/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/2/fig_7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"spectra chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"e","x":6,"y":919,"width":631,"height":432},{"panel_id":"a","x":4,"y":3,"width":638,"height":875}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/Ab-initio molecular dynamics simulations of the reactivity of MoS2 towards F2 molecules.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":644,"height":1361,"image_format":"jpeg","image_sha256":"d140d129894bada6728d62b74aec850077d5b78d269e4f05fb81b0c41c208053","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_2_fig_9.jpg","caption":"Fig. 9. a) Snapshot of MD simulation (5 ps) for $\\mathrm{MoS_2}$ bilayer at $1500~\\mathrm{K}$ . There are 12F atoms on the top layer and 12F atoms in the interlayer region. The top layer has a pit defect (3 S and 1 Mo vacancies). b) Trajectories of Mo and F atoms during 10 ps of simulation time within the interlayer region. c) Snapshots showing the release of $\\mathrm{SF_2}$ (and later conversion to $\\mathrm{SF_3}$ and $\\mathrm{SF_4}$ ) in the interlayer region. Note the continuous separation of the layers. d) Variation of total energy during the simulation. The black arrows indicate desorption processes from the top layer towards the gas phase, whereas the red arrows indicate the time of appearance $\\mathrm{SF_x}$ species within the interlayer region.","id":"train/atomic-layer-etching/simulation-usecase/2/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/2/fig_9","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"multi spectra chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":5,"width":564,"height":353},{"panel_id":"b","x":1,"y":384,"width":573,"height":379},{"panel_id":"c","x":5,"y":770,"width":570,"height":471},{"panel_id":"g","x":8,"y":1254,"width":567,"height":395}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/Ab-initio molecular dynamics simulations of the reactivity of MoS2 towards F2 molecules.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":580,"height":1653,"image_format":"jpeg","image_sha256":"fd3c300a85759f1f75e2e7771216acb5a86c62903cbae494ab2478a145987f13","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_1.jpg","caption":"Figure 1. (a) Equilibrium bulk geometry of rutile $\\mathrm{TiO}_2$ . (b) Relaxed surface slab of $\\mathrm{TiO}_2(110)$ . Ti and O atoms are displayed in cyan and red, respectively.","id":"train/atomic-layer-etching/simulation-usecase/20/figure_1","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":89,"y":30,"width":282,"height":275},{"panel_id":"b","x":9,"y":398,"width":418,"height":449}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":427,"height":847,"image_format":"jpeg","image_sha256":"8a5b74ff4ad66636f6b2affb5617af33c08214bf0d033d6c3185bda99d1143c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_26_fig_2.jpg","caption":"FIG. 2. Si substrates after Cl deposition MD simulations. (a) Crystalline Si substrate model with a (100) top surface at $300~\\mathrm{K}$ after it was exposed to $0.1\\mathrm{eVCl}$ atoms with an atomic dose of $0.94\\times 10^{15}\\mathrm{cm}^{-2}$ in MD simulation. (b) Depth profiles of atomic densities corresponding to (a). (c) Crystalline Si substrate model with a (100) top surface at $300\\mathrm{K}$ after it was exposed to $20\\mathrm{eVCl^{+}}$ ions with an ion dose of $9.4\\times 10^{15}\\mathrm{cm}^{-2}$ in MD simulation. (d) Depth profiles of atomic densities corresponding to (c). In both (a) and (c), the angle of incidence of the impinging ions was normal to the initial (100) Si surface. The depth is measured from the position of the top (100) surface of the initial Si substrate prior to the deposition of Cl. The atomic density was obtained as a moving average with an interval of $3\\mathrm{\\AA}$ as a function of the depth. The Cl adsorption conditions for (a) and (c) are called the \"thin Cl layer deposition\" and \"thick Cl layer adsorption\" in this article.","id":"train/atomic-layer-etching/simulation-usecase/26/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/26/fig_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"multi spectra chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":8,"y":28,"width":306,"height":288},{"panel_id":"b","x":362,"y":0,"width":266,"height":410},{"panel_id":"c","x":0,"y":499,"width":310,"height":368},{"panel_id":"d","x":348,"y":489,"width":280,"height":438}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/Surface damage formation during atomic layer etching of silicon with chlorine adsorption.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":628,"height":972,"image_format":"jpeg","image_sha256":"86ed42a6c5c34175832272b30ebde9f367a69cbf725b3d54415addc4e2b433b6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_26_fig_6.jpg","caption":"FIG. 6. Atomic configurations and the corresponding atomic-density depth profiles at the end of the first ALE cycle (C1) with the thin Cl layer deposition and $20\\mathrm{eV}\\mathrm{Ar^{+}}$ ion bombardment. The other conditions are the same as those in Table I. The gray, red, and blue spheres represent Si, Cl, and Ar atoms, respectively. The depth profile was obtained in the same way as in Fig. 2.","id":"train/atomic-layer-etching/simulation-usecase/26/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/26/fig_6","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure depicts a molecular structure diagram with atoms represented as spheres. Different atoms are distinguished by color: Si (gray), Cl (red), and Ar+ (blue).\"},{\"panel_id\":\"b\",\"text\":\"The figure shows a line chart with depth on the y-axis and atomic density on the x-axis, displaying the density profiles of Si, Cl, and Ar+ corresponding to the layer highlighted in the image a\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Depth (nm) | Si Atomic Density (×10^23/cm³) | Cl Atomic Density (×10^23/cm³) | Ar Atomic Density (×10^23/cm³) |\\n|-----------|---------------------------------|---------------------------------|--------------------------------|\\n| 0.0 | 0.50 | 0.05 | 0.02 |\\n| -0.5 | 0.48 | 0.03 | 0.015 |\\n| -1.0 | 0.45 | 0.01 | 0.005 |\\n| -1.5 | 0.43 | ~0 | ~0 |\\n| -2.0 | 0.42 | ~0 | ~0 |\\n| -2.5 | 0.41 | ~0 | ~0 |\\n| -3.0 | 0.40 | ~0 | ~0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To characterize the damage formation, the thickness of the damaged-layer was measured from the depth profile, which is 1.5 nm from the surface\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A thickness of 1.5nm correspond to 11 Si monolayers.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Cl density disappears after 1 nm depth and Ar also disappears after 1nm indicating that at 20 eV Ar+ only influences the surface of Si and does not affect the bulk nor penetrate deeper\"}]}]","bbox":[{"panel_id":"a","x":1,"y":4,"width":364,"height":423},{"panel_id":"b","x":367,"y":7,"width":257,"height":437}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/Surface damage formation during atomic layer etching of silicon with chlorine adsorption.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":628,"height":444,"image_format":"jpeg","image_sha256":"7b6da11efb59feae056ed33db2c31e0f40eea750b12aa9f7205b8b0a32ed9a07","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_2.jpg","caption":"Fig. 2. Plan view atomistic structures of the bulk phase: (a) $2\\times 2\\times 1$ supercell of expanded alpha- $\\mathrm{Al_2O_3}$ , $\\mathrm{Al_{48}O_{72}}$ , (b) amorphous $\\mathrm{Al_{48}O_{72}}$ after melt-quenching using AIMD simulation, and (c) amorphous $\\mathrm{Al_{48}O_{72}}$ after geometry optimization by DFT.","id":"train/atomic-layer-etching/simulation-usecase/29/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":38,"width":275,"height":399},{"panel_id":"b","x":289,"y":42,"width":323,"height":391},{"panel_id":"c","x":653,"y":39,"width":253,"height":399}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":909,"height":439,"image_format":"jpeg","image_sha256":"ccd0b1adfe62eb25205183121ee70a4892965ae312d056df705431bc63c76638","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_5.jpg","caption":"Fig. 5. Planar views of the $\\mathsf{a - Al_2O_3}$ substrate models used to simulate the fluorination reaction by HF, terminated with (a) $-\\mathrm{OH}$ , (b) $-\\mathrm{CH_3}$ , (c) $-\\mathrm{AlF}$ , (d) $-\\mathrm{AlF_2}$ , and (e) $-\\mathrm{AlF_3}$ .","id":"train/atomic-layer-etching/simulation-usecase/29/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":12,"y":25,"width":223,"height":327},{"panel_id":"b","x":261,"y":25,"width":224,"height":327},{"panel_id":"c","x":508,"y":24,"width":223,"height":367},{"panel_id":"d","x":751,"y":26,"width":222,"height":339},{"panel_id":"e","x":991,"y":26,"width":226,"height":346}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1217,"height":391,"image_format":"jpeg","image_sha256":"39d69f59376f04645ebe40db57039f3701275a3275dedf97a8973a7d2ab653bb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_31_figure_2.jpg","caption":"Figure 2. Structures of the $\\mathrm{Ni}(\\mathrm{II})$ and $\\mathrm{Cu(I)}$ complexes considered. Only the formates are shown. Respective formamidinates can be found by replacing oxygen atoms with secondary amine groups. The relative stabilities are shown in Figure 3. The dimer and tetramer structures are found to be the most stable for formate and formamidinate complexes, respectively. Oligomers are not investigated for $\\mathrm{Cu}$ (see page 9).","id":"train/atomic-layer-etching/simulation-usecase/31/figure_2","sample_id":"atomic-layer-etching/simulation-usecase/31/figure_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"},{"panel_id":"h","label":"molecular structure diagram"},{"panel_id":"i","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic diagram of a Ni(II) formate monodentate monomer, showing a single oxygen atom coordinating to the nickel center.\"},{\"panel_id\":\"b\",\"text\":\"Schematic diagram of a Ni(II) formate bidentate planar monomer, where the formate ligand binds through two oxygen atoms in a planar coordination geometry.\"},{\"panel_id\":\"c\",\"text\":\"Schematic diagram of a Ni(II) formate bidentate tetrahedral monomer, illustrating a non-planar coordination environment around the nickel center.\"},{\"panel_id\":\"d\",\"text\":\"Schematic diagram of a Cu(I) formate dimer, showing two copper atoms bridged by formate ligands confirming a dimeric coordination structure.\"},{\"panel_id\":\"e\",\"text\":\"Schematic diagram of a Ni(II) formate dimer, depicting two nickel centers connected through shared formate ligands.\"},{\"panel_id\":\"f\",\"text\":\"Schematic diagram of a Ni(II) formate trimer, consisting of three nickel atoms linked in a cyclic oligomeric arrangement.\"},{\"panel_id\":\"g\",\"text\":\"Schematic diagram of Ni(II) tetramer structure #1, showing a four-nickel oligomer coordinated by multiple formate ligands.\"},{\"panel_id\":\"h\",\"text\":\"Schematic diagram of Ni(II) tetramer structure #2, presenting an alternative four-nickel coordination topology distinct from tetramer #1.\"},{\"panel_id\":\"i\",\"text\":\"Schematic diagram of Ni(II) tetramer structure #3, illustrating a third distinct tetrameric coordination arrangement of nickel and formate ligands.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"According to the figure caption, the dimer structure is found to be the most stable configuration for metal formate complexes. Understanding this stability is crucial for predicting how these precursors will behave during the volatilization and surface reaction steps of an ALD process. It suggests that the precursor likely exists in this bridged form rather than as an isolated monomer under experimental conditions.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The monodentate monomer coordinates through a single oxygen atom of the formate ligand rather than two.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Three nickel atoms (Ni Trimer).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It's coordinated by two oxygen atoms from each formate ligand in a flat, square-planar-like arrangement.\"}]}]","bbox":[{"panel_id":"a","x":40,"y":1,"width":199,"height":189},{"panel_id":"b","x":324,"y":11,"width":197,"height":177},{"panel_id":"c","x":595,"y":6,"width":241,"height":182},{"panel_id":"d","x":80,"y":243,"width":122,"height":230},{"panel_id":"e","x":345,"y":241,"width":147,"height":234},{"panel_id":"f","x":608,"y":224,"width":214,"height":246},{"panel_id":"g","x":11,"y":510,"width":256,"height":283},{"panel_id":"h","x":292,"y":510,"width":256,"height":283},{"panel_id":"i","x":577,"y":511,"width":272,"height":281}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/Thermodynamics of Atomic Layer Etching Chemistry on Copper and Nickel Surfaces from First Principles.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":850,"height":797,"image_format":"jpeg","image_sha256":"b93d4ae9029ef8567557d98e7b953744ebe1c3ec9cc1035fe56990955cf2334f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_32_fig_1.jpg","caption":"FIG. 1. The eight initial configurations of $\\mathrm{BCl}_3$ molecule considered here to find its most stable geometry when it adsorbed on $\\mathrm{Al}_2\\mathrm{O}_3(100)$ . The values shown in parentheses indicate their respective adsorption energies (unit: $\\mathrm{Kcal / mol}$ ) obtained after geometric optimization. The oxygen, aluminum, boron, and chlorine atoms are shown in red, violet (dark and light grays in black and white, respectively), bronze, and green, respectively.","id":"train/atomic-layer-etching/simulation-usecase/32/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/32/fig_1","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Optimized geometries for four BCl3 adsorption starting configurations where the B atom is at hollow sites: Oh EC, Ah EC, Oh TR, and Ah TR. Each configuration is labeled with its adsorption energy in kcal/mol, all close to about minus 32 kcal/mol.\"},{\"panel_id\":\"b\",\"text\":\"Optimized geometries for four BCl3 adsorption starting configurations where the B atom is on top sites: At TR, Ot TR, At EC, and Ot EC. Adsorption energies span from about minus 15 to minus 59 kcal/mol, with Ot TR being the most stable (most negative) case.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Figure | Description |\\n| --- | --- |\\n| a | Left molecular structure diagram with labeled atoms and bonds. |\\n| b | Right molecular structure diagram with labeled atoms and bonds. |\"},{\"panel_id\":\"b\",\"text\":\"| Figure | Description |\\n| --- | --- |\\n| a | Left molecular structure diagram with labeled atoms and bonds. |\\n| b | Right molecular structure diagram with labeled atoms and bonds. |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Red is oxygen, Violet is aluminum, Bronze is boron, Green is chlorine\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"They combine two choices. First is the initial B position: on top of O (Ot), on top of Al (At), hollow site above second layer O (Oh), or hollow site above second layer Al (Ah). Second is the Cl arrangement in the top view: EC (eclipse) or TR (trans).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The most stable configuration is Ot TR, with an adsorption energy of minus 58.986 kcal/mol. In this paper’s naming, Ot means the B atom of BCl3 starts on top of an oxygen atom in the uppermost Al2O3 layer, and TR means the trans arrangement in the top view definition used by the authors. The fact that this value is the most negative among the eight indicates the strongest adsorption among the tested starting geometries.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ot TR (minus 58.986) and Ot EC (minus 45.617) are much more negative than At TR (minus 17.574) and At EC (minus 15.347). This suggests that, among the tested on top starting sites, adsorption is far more favorable when B is on top of an oxygen site than on top of an aluminum site.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":17,"width":340,"height":588},{"panel_id":"b","x":350,"y":5,"width":289,"height":581}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/Understanding time-resolved processes in atomic-layer etching of ultra-thin Al2O3 film.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":641,"height":606,"image_format":"jpeg","image_sha256":"cd093c97be128df465796d19dd03631231e2340097e1c98b11fb5465b1ca6b6f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_32_fig_2.jpg","caption":"FIG. 2. The atomic electron population changes (a) and bond electron population changes (b) of $\\mathrm{BCl}_3 + \\mathrm{Al}_2\\mathrm{O}_3(100)$ system upon the $\\mathrm{BCl}_3$ adsorption (unit: electron charge). The oxygen, aluminum, boron, and chlorine atoms are shown in red, violet, bronze, and green, respectively.","id":"train/atomic-layer-etching/simulation-usecase/32/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/32/fig_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Mulliken atomic electron population changes for the most stable BCl3 adsorption configuration on Al2O3(100). Numbers on atoms show the change in electron population upon adsorption (unit: electron charge), with the largest decrease on B (minus 0.246) and notable increases on the two Al atoms bonded to Cl.\"},{\"panel_id\":\"b\",\"text\":\"Mulliken bond electron population changes upon BCl3 adsorption. Positive values indicate increased bond electron population on specific contacts such as B to Oads and Cl to Alads, while negative values indicate decreased bond electron population, including weakened bonds between Oads and neighboring Al atoms.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Atoms | Bond Lengths |\\n|---|---|\\n| Green | 0.059*, -0.025*, -0.019* |\\n| Purple | 0.148*, 0.009, -0.011, 0.008 |\\n| Red | 0.010, -0.059*, -0.001, -0.013 |\"},{\"panel_id\":\"b\",\"text\":\"| Atoms | Bond Lengths |\\n|---|---|\\n| Green | -0.49*, 0.807*, -0.713*, 0.930* |\\n| Purple | 0.762*, -0.327*, -0.201*, -0.338* |\\n| Red | -0.040, -0.048, 0.000, 0.052 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Positive means that atom’s electron population increases upon BCl3 adsorption. Negative means it decreases.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The boron atom shows the largest decrease, with a change of about minus 0.246 electron charge.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. A bond between B and the adsorption site oxygen (Oads).\\n2. Bonds between Cl and the two adsorption site aluminum atoms (Alads).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The bond population analysis indicates that bonds between Oads and its adjacent Al atoms are substantially weakened upon BCl3 adsorption. At the same time, new B to Oads and Cl to Alads bonds are formed, creating OBCl and AlCl containing moieties at the surface. This combination motivates the authors’ inference that Al associated fragments such as OAlCl (or AlCl) can detach readily under Ar bombardment at early etching stages.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":8,"width":642,"height":378},{"panel_id":"b","x":0,"y":425,"width":630,"height":378}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/Understanding time-resolved processes in atomic-layer etching of ultra-thin Al2O3 film.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":642,"height":803,"image_format":"jpeg","image_sha256":"284d39c29948258780acaa2015478425124673237de0d1af36c4255ea35c7031","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_32_fig_4.jpg","caption":"FIG. 4. Three different routes for the etching of $\\mathrm{Al}_2\\mathrm{O}_3$ film, i.e., route 1 (a), route 2 (b), and route 3 (c) where the numbers in the figures indicate their respective etching event sequence. Routes 1 and 2 are for ALET processes while route 3 is for conventional plasma etching process.","id":"train/atomic-layer-etching/simulation-usecase/32/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/32/fig_4","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Route 1 for ALET, showing a sequential etching pathway where Al associated and B associated surface fragments form and detach in the order indicated by the numbered dashed regions. The paper describes this route as sequential detachment of OAlCl, then OBCl, then OAlCl.\"},{\"panel_id\":\"b\",\"text\":\"Route 2 for ALET, showing an alternative event sequence (numbers in dashed regions) that includes breaking an OAlCl unit into AlCl and O before later OBCl related removal. The paper describes this route as AlCl, then O, then OBCl, then AlCl, then O.\"},{\"panel_id\":\"c\",\"text\":\"Route 3 for conventional plasma etching of pristine Al2O3, where etching is represented as sequential removal steps involving Al and O atoms in the order labeled by the numbers.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They mark the local reaction site for each etching event, and the numbers give the order of the etching events along that route.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The authors show that changing the order of elementary removal events changes the reaction energetics, especially the maximum reaction energy along a route. In ALET, BCl3 adsorption enables pathways where Al associated moieties can detach early, reducing the energetic requirement compared with etching pristine Al2O3. They also note that if the sequence is altered so O associated moieties detach first, the maximum energy can rise to a level comparable to conventional plasma etching.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Route 1 (panel a) is ALET.\\n2. Route 2 (panel b) is ALET.\\n3. 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(a) Comparison of the DFT and NNP energies along the NNP MD trajectory for the crystalline slab after the primitive training and (b) the etched surface after the NNP MD simulation. 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(a–f) The etched surfaces of $\\mathrm{a - Si_3N_4}$ with regard to the angle of incidence $(\\theta_{\\mathrm{in}})$ of HF: $\\theta_{\\mathrm{in}} = 0, 15, 30, 45, 60$ and $75^{\\circ}$ , respectively. The kinetic energy of the HF molecule is $50~\\mathrm{eV}$ . The initial height of the surface before etching is noted as a dashed horizontal line.","id":"train/atomic-layer-etching/simulation-usecase/33/figure_8","sample_id":"atomic-layer-etching/simulation-usecase/33/figure_8","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":903,"height":328}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":903,"height":328,"image_format":"jpeg","image_sha256":"af1732f6e416d6fec937ad9a4ee9386dbe8bb1846188bf7d23b7ccba38385925","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_35_435b0c42ea89c8d2de2dcaea88e499aa20a402f2b076777162ac90d4a10d1a1c.jpg","caption":"","id":"train/atomic-layer-etching/simulation-usecase/35/435b0c42ea89c8d2de2dcaea88e499aa20a402f2b076777162ac90d4a10d1a1c","sample_id":"atomic-layer-etching/simulation-usecase/35/435b0c42ea89c8d2de2dcaea88e499aa20a402f2b076777162ac90d4a10d1a1c","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":4,"width":227,"height":314},{"panel_id":"b","x":238,"y":7,"width":430,"height":314}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/435b0c42ea89c8d2de2dcaea88e499aa20a402f2b076777162ac90d4a10d1a1c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/435b0c42ea89c8d2de2dcaea88e499aa20a402f2b076777162ac90d4a10d1a1c.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/Density Functional Theory Study of Oxygen Adsorption on Polymer Surfaces for Atomic-Layer.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"not_found"},"width":669,"height":322,"image_format":"jpeg","image_sha256":"854667c75d9d0d16438f26ba30b34b4af9487f67b44cec464c2e05a273cae1c0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_35_FIG2.jpg","caption":"Figure 2. Lateral and front views of the PS surface model used in the calculations. Brown spheres represent carbon atoms, and white spheres represent hydrogen atoms.","id":"train/atomic-layer-etching/simulation-usecase/35/FIG2","sample_id":"atomic-layer-etching/simulation-usecase/35/FIG2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This panel shows a dense, three-dimensional molecular model of bulk polystyrene. Many polymer chains are packed together, forming an entangled network. Individual chains are hard to distinguish at this scale.\"},{\"panel_id\":\"b\",\"text\":\"A local segment of the polystyrene network is highlighted and isolated from the bulk. This extracted region represents a single chain portion without surrounding crowding. The backbone and side groups are more clearly visible.\"},{\"panel_id\":\"c\",\"text\":\"The isolated chain segment is shown as a simplified ribbon-style structure. The polymer backbone and phenyl side groups are retained, but the representation is cleaner and more ordered. This view focuses on chain geometry rather than bulk packing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The bulk structure is very dense and visually complex. Extracting a local segment removes interference from neighboring chains. This allows the intrinsic chain geometry to be examined clearly. It also makes later structural or reaction analysis more practical.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The overall chain conformation and backbone geometry.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ribbon model is isolated and ordered, unlike the crowded bulk network.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It helps focus on the specific bonds and functional groups most likely to react under given conditions. By removing bulk packing effects, it becomes easier to attribute changes to local chemistry rather than crowding. This can guide hypotheses about reaction pathways relevant to surface treatment or plasma exposure.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":5,"width":549,"height":517},{"panel_id":"b","x":1,"y":5,"width":549,"height":517},{"panel_id":"c","x":496,"y":270,"width":385,"height":248}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/Density Functional Theory Study of Oxygen Adsorption on Polymer Surfaces for Atomic-Layer.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":908,"height":522,"image_format":"jpeg","image_sha256":"38133536bb01f610934b20781af8d985035c1c97cc11345dd2b916fc1ca249d4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_35_FIG3.jpg","caption":"","id":"train/atomic-layer-etching/simulation-usecase/35/FIG3","sample_id":"atomic-layer-etching/simulation-usecase/35/FIG3","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"},{"panel_id":"h","label":"molecular structure diagram"},{"panel_id":"i","label":"molecular structure diagram"},{"panel_id":"j","label":"molecular structure diagram"},{"panel_id":"k","label":"molecular structure diagram"},{"panel_id":"l","label":"molecular structure diagram"},{"panel_id":"m","label":"molecular structure diagram"},{"panel_id":"n","label":"molecular structure diagram"},{"panel_id":"o","label":"molecular structure diagram"},{"panel_id":"p","label":"molecular structure diagram"},{"panel_id":"q","label":"molecular structure diagram"},{"panel_id":"r","label":"molecular structure diagram"},{"panel_id":"s","label":"molecular structure diagram"},{"panel_id":"t","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The structure shows the intact molecular backbone with a single oxygen added at an isolated site. The overall geometry remains unchanged.\"},{\"panel_id\":\"b\",\"text\":\"A second oxygen binds near the first site, causing a small local rearrangement but no global distortion.\"},{\"panel_id\":\"c\",\"text\":\"Additional oxygen appears on a neighboring group, slightly increasing local strain while preserving the backbone.\"},{\"panel_id\":\"d\",\"text\":\"Oxygen functionalization expands across adjacent positions. The structure is still mostly rigid.\"},{\"panel_id\":\"e\",\"text\":\"Multiple oxygen-containing groups are now present. Minor bending of side chains becomes visible.\"},{\"panel_id\":\"f\",\"text\":\"New oxygen species attach at different regions of the molecule. Local crowding starts to appear.\"},{\"panel_id\":\"g\",\"text\":\"Oxygen groups are more evenly distributed. Small conformational adjustments accommodate the added atoms.\"},{\"panel_id\":\"h\",\"text\":\"The density of oxygen increases, leading to noticeable backbone flexibility.\"},{\"panel_id\":\"i\",\"text\":\"Several oxygen clusters form close to each other. Bond angles begin to deviate from the original structure.\"},{\"panel_id\":\"j\",\"text\":\"The molecule shows clear signs of strain, though the main framework is still connected.\"},{\"panel_id\":\"k\",\"text\":\"Oxygen accumulation becomes more pronounced. Side groups rotate to relieve local stress.\"},{\"panel_id\":\"l\",\"text\":\"Multiple oxygen-rich regions interact. Structural symmetry is reduced.\"},{\"panel_id\":\"m\",\"text\":\"The backbone starts to bend noticeably. Oxygen clustering increases.\"},{\"panel_id\":\"n\",\"text\":\"Strain propagates through the structure. Several bonds appear elongated.\"},{\"panel_id\":\"o\",\"text\":\"The molecule approaches a highly oxidized state. Local distortions dominate the geometry.\"},{\"panel_id\":\"p\",\"text\":\"Heavy oxygen loading leads to strong deformation. The original shape is partially lost.\"},{\"panel_id\":\"q\",\"text\":\"Oxygen clusters interact strongly, producing pronounced backbone curvature.\"},{\"panel_id\":\"r\",\"text\":\"Structural integrity weakens further. Several regions appear over-functionalized.\"},{\"panel_id\":\"s\",\"text\":\"The molecule shows advanced distortion with dense oxygen coverage.\"},{\"panel_id\":\"t\",\"text\":\"At maximum oxygen content, the structure is highly strained and fragmented in appearance.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"},{\"panel_id\":\"h\",\"text\":\"\"},{\"panel_id\":\"i\",\"text\":\"\"},{\"panel_id\":\"j\",\"text\":\"\"},{\"panel_id\":\"k\",\"text\":\"\"},{\"panel_id\":\"l\",\"text\":\"\"},{\"panel_id\":\"m\",\"text\":\"\"},{\"panel_id\":\"n\",\"text\":\"\"},{\"panel_id\":\"o\",\"text\":\"\"},{\"panel_id\":\"p\",\"text\":\"\"},{\"panel_id\":\"q\",\"text\":\"\"},{\"panel_id\":\"r\",\"text\":\"\"},{\"panel_id\":\"s\",\"text\":\"\"},{\"panel_id\":\"t\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"j\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Oxygen incorporation increases from six to ten.\"}]},{\"panel_id\":\"q\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It provides candidate intermediates or endpoints that differ only in oxygen loading and placement. That can help bracket plausible reaction pathways and compare how oxygen density affects local chemical environments. It also supports selecting representative structures for simulation rather than guessing a single configuration.\"}]},{\"panel_id\":\"p\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies a systematic series where oxygen is incorporated stepwise while keeping the same backbone. Each successive label adds one additional oxygen to create a new configuration. This kind of enumeration is typical when mapping possible oxidation or functionalization states.\"}]},{\"panel_id\":\"k\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The same carbon framework and overall connectivity are preserved, with only oxygen count/placement changing.\"}]}]","bbox":[{"panel_id":"a","x":22,"y":9,"width":164,"height":163},{"panel_id":"b","x":215,"y":9,"width":167,"height":170},{"panel_id":"c","x":403,"y":6,"width":163,"height":172},{"panel_id":"d","x":572,"y":9,"width":156,"height":168},{"panel_id":"e","x":764,"y":9,"width":150,"height":163},{"panel_id":"f","x":31,"y":215,"width":159,"height":212},{"panel_id":"g","x":215,"y":220,"width":165,"height":213},{"panel_id":"h","x":401,"y":220,"width":158,"height":209},{"panel_id":"i","x":578,"y":220,"width":159,"height":209},{"panel_id":"j","x":772,"y":220,"width":161,"height":206},{"panel_id":"k","x":35,"y":448,"width":146,"height":130},{"panel_id":"l","x":220,"y":453,"width":142,"height":126},{"panel_id":"m","x":412,"y":445,"width":154,"height":132},{"panel_id":"n","x":592,"y":451,"width":151,"height":131},{"panel_id":"o","x":764,"y":451,"width":157,"height":135},{"panel_id":"p","x":28,"y":610,"width":163,"height":188},{"panel_id":"q","x":214,"y":610,"width":161,"height":188},{"panel_id":"r","x":404,"y":617,"width":159,"height":181},{"panel_id":"s","x":589,"y":613,"width":160,"height":185},{"panel_id":"t","x":773,"y":615,"width":150,"height":177}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/Density Functional Theory Study of Oxygen Adsorption on Polymer Surfaces for Atomic-Layer.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"not_found"},"width":946,"height":810,"image_format":"jpeg","image_sha256":"7df8c3095df679c707e5e91813d665c22706f8aa649f65d3ae674e50df137165","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_35_FIG6.jpg","caption":"0 Figure 6. Optimized geometries of one and two oxygen atoms adsorbed on partially dehydrogenated PS surfaces, expressed as a function of the hydrogen removal coverage $\\theta$ . Brown, white, and red spheres represent carbon, hydrogen, and oxygen atoms, respectively.","id":"train/atomic-layer-etching/simulation-usecase/35/FIG6","sample_id":"atomic-layer-etching/simulation-usecase/35/FIG6","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"At low hydrogen coverage (θ(H) = 0.12), the optimized molecular structures remain relatively extended. The backbone shows limited bending, and the difference between the O and 2O configurations is modest, indicating minimal structural perturbation at this coverage.\"},{\"panel_id\":\"b\",\"text\":\"At θ(H) = 0.18, hydrogen incorporation begins to induce noticeable conformational adjustment. The 2O configuration exhibits slightly greater bending than the O case, suggesting that additional oxygen enhances local structural flexibility even at moderate hydrogen coverage.\"},{\"panel_id\":\"c\",\"text\":\"At intermediate hydrogen coverage (θ(H) = 0.26), the molecular framework becomes more distorted. The presence of two oxygen atoms leads to increased folding and asymmetry compared to the single-oxygen configuration, indicating cooperative effects between hydrogen coverage and oxygen content.\"},{\"panel_id\":\"d\",\"text\":\"At high hydrogen coverage (θ(H) = 0.48), the structures are significantly more compact and rearranged. Both O and 2O configurations show strong folding, with the 2O case displaying the most pronounced distortion, reflecting substantial structural reorganization driven by combined high hydrogen coverage and oxygen incorporation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At low hydrogen coverage, the molecular backbone remains relatively extended. As hydrogen coverage increases, the structure becomes more flexible. This leads to bending, folding, and stronger local rearrangements.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Adding a second oxygen increases local structural distortion. At higher hydrogen coverage, this results in stronger folding and clustering. The combined presence of hydrogen and oxygen amplifies molecular rearrangement.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Hydrogen coverage controls molecular flexibility and mobility, while oxygen introduces chemically active sites. Their combined presence determines whether structural modification remains moderate or becomes severe. Understanding both variables helps identify safe regimes for surface or polymer modification without excessive structural disruption.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The structure at θ(H)=0.48 is much more compact and distorted than at θ(H)=0.12.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":8,"width":594,"height":324},{"panel_id":"b","x":628,"y":16,"width":544,"height":313},{"panel_id":"c","x":26,"y":352,"width":595,"height":382},{"panel_id":"d","x":639,"y":354,"width":539,"height":370}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/Density Functional Theory Study of Oxygen Adsorption on Polymer Surfaces for Atomic-Layer.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1216,"height":747,"image_format":"jpeg","image_sha256":"dd36dd933e305b8cab1dc19f45980288a6b90949d24f804b042af2fa42e7eddc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_35_FIG7.jpg","caption":"Figure 7. (a-d) Snapshots representing the final configurations of oxygen adsorption on partially dehydrogenated PS, for a hydrogen removal coverage of $\\theta = 0.48$ . The oxygen flux density and corresponding initial forces are listed below each picture. The graph shows the depth reached by the incoming oxygen atoms, expressed as a function of the flux density, as obtained at room temperature and for the set of initial forces considered. The data shown in the graph include only the lowest flux densities. For the complete set of results, see Figure S8. The color code is the same as that in the previous figures.","id":"train/atomic-layer-etching/simulation-usecase/35/FIG7","sample_id":"atomic-layer-etching/simulation-usecase/35/FIG7","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"multiple scatter plot"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":31,"y":29,"width":311,"height":330},{"panel_id":"b","x":367,"y":27,"width":309,"height":332},{"panel_id":"c","x":35,"y":435,"width":307,"height":324},{"panel_id":"d","x":369,"y":433,"width":319,"height":324},{"panel_id":"e","x":712,"y":92,"width":869,"height":595}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/Density Functional Theory Study of Oxygen Adsorption on Polymer Surfaces for Atomic-Layer.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1590,"height":800,"image_format":"jpeg","image_sha256":"6d4e76f2f501e351189aeb5b1f124172a0b86da6371dff609a6b55982b5ca2f6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_5_fig_2.jpg","caption":"Fig. 2 (a) Side view of Ge surface after chlorination with different energies. The layer thickness showing here is around $16\\mathrm{\\AA}$ . Non-adsorbed Cl/Cl $_2$ away from surface have been deleted. (b) System energy (including both kinetic and potential energy) after equilibration (error bar smaller than the symbol) and Cl penetration depth change with chlorination energy. The dashed blue line represents the system energy in pure Ge surface structure, which is $-3.57\\mathrm{eV}$ per atom. (c) Radial distribution function (RDF) of Ge-Ge atom pair within $10\\mathrm{\\AA}$ from the chlorinated surface generated by different chlorination energy.","id":"train/atomic-layer-etching/simulation-usecase/5/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/5/fig_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"multi spectra chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":6,"width":573,"height":251},{"panel_id":"b","x":3,"y":251,"width":306,"height":219},{"panel_id":"c","x":311,"y":257,"width":267,"height":213}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/Computational modelling of atomic layer etching of chlorinated germanium surfaces by argon.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":580,"height":472,"image_format":"jpeg","image_sha256":"e4217f91b721bed0b96886b23f2d8e2619791e54fc4613cb23b679777a8f003c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_5_fig_3.jpg","caption":"Fig. 3 Snapshots of Ge surface after $100\\mathrm{eV}$ Ar bombardment (200 times). Light green: Cl. Cyan: Ge.","id":"train/atomic-layer-etching/simulation-usecase/5/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/5/fig_3","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":6,"width":600,"height":288}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/Computational modelling of atomic layer etching of chlorinated germanium surfaces by argon.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":605,"height":295,"image_format":"jpeg","image_sha256":"1591bbc5b76c5248420021ef5ead4ef26d8958b2c961128b5fa8c2ae2f37a123","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_9_fig_2.jpg","caption":"Fig. 2. (a) Front and top views of the Si(111) - $(4\\times 2)$ surface geometry, dark yellow atoms are Si-adatom and Si-restatom with a dangling bond, the red dotted lines are periodic boundary conditions (PBC). (b) The optimized geometry of chlorinated Si(111) surface, a $\\mathrm{SiCl_2}$ is generated on the adatom A1, A1 is the adatom, R1 is the restatom, NR is the newly exposed restatom due to the breakage of a back-bond of A1.","id":"train/atomic-layer-etching/simulation-usecase/9/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/9/fig_2","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":371,"y":26,"width":318,"height":460},{"panel_id":"a","x":5,"y":9,"width":368,"height":480}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/Mechanism of photoassisted atomic layer etching of chlorinated Si(111) surfaces Insight.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":689,"height":489,"image_format":"jpeg","image_sha256":"dec9e23c207527f6d3ad021cf1adc21a15abf38527994fe04d1f2d0ae3d06c57","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_9_fig_4.jpg","caption":"Fig. 4. Molecular structure of the selected cluster for TDDFT calculations. The cluster was extracted from the optimized slab (see Fig. 2(b)) and selected by convergence tests (see Fig. A2).","id":"train/atomic-layer-etching/simulation-usecase/9/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/9/fig_4","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":2,"width":674,"height":707}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/Mechanism of photoassisted atomic layer etching of chlorinated Si(111) surfaces Insight.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":686,"height":717,"image_format":"jpeg","image_sha256":"2eb85848a5b7f365281db108fe6a278063bb4c8945ab5102c66707232be59316","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_9_fig_5.jpg","caption":"Fig. 5. HOMO and LOMO diagrams within the localized $\\mathrm{SiCl_2}$ region, side view of Fig. 4 is selected for a better visualization.","id":"train/atomic-layer-etching/simulation-usecase/9/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/9/fig_5","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":373,"y":2,"width":315,"height":524},{"panel_id":"a","x":3,"y":2,"width":362,"height":524}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/Mechanism of photoassisted atomic layer etching of chlorinated Si(111) surfaces Insight.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":692,"height":530,"image_format":"jpeg","image_sha256":"e8eddd960164b42c2dfd44f1a1c9230c10aa0819b7d9f0774d7c2ea3f0e20f6c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_9_fig_6.jpg","caption":"Fig. 6. Hole and electron distributions related to the lowest excitation, $\\mathrm{pink} =$ hole, blue $=$ electron, hole indicates the loss of electron.","id":"train/atomic-layer-etching/simulation-usecase/9/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/9/fig_6","subset":"molecular-structure-diagram","split":"train","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":363,"y":5,"width":326,"height":506},{"panel_id":"a","x":2,"y":4,"width":356,"height":510}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/Mechanism of photoassisted atomic layer etching of chlorinated Si(111) surfaces Insight.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":692,"height":516,"image_format":"jpeg","image_sha256":"1b13061363998db8f668fe9b23d918d065610ed93ce871cde1d77a242464713f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/molecular-structure-diagram/validation/metadata.jsonl b/subsets/molecular-structure-diagram/validation/metadata.jsonl index ebdaa81ae305776b2d312682f54e83bded778645..b562c12137b8d6a34abe7aef9800fe8696905105 100644 --- a/subsets/molecular-structure-diagram/validation/metadata.jsonl +++ b/subsets/molecular-structure-diagram/validation/metadata.jsonl @@ -1,37 +1,37 @@ -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_47_fig_1.jpg","caption":"Fig. 1. Structures of tris(diethylamino)aluminum and tris(diisopropyl) aluminum.","id":"validation/atomic-layer-deposition/experimental-usecase/47/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/47/fig_1","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/images/fig_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/Wade et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":408,"height":237,"image_format":"jpeg","image_sha256":"98269de15f98d431d699c936c2fd290b8981f631ccc036db1b135b5c855ab15b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":191,"height":232},{"panel_id":"b","x":192,"y":-2,"width":215,"height":238}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG4_a2.jpg","caption":"FIG. 4. Schematic of the crystal lattice of (a) stoichiometric NiO and (b) nonstoichiometric NiO containing Ni vacancies, $\\mathrm{Ni}^{3+}$ states, and $-\\mathrm{OH}$ groups. The arrow indicates electron transfer from $\\mathrm{Ni}^{2+}$ or $\\mathrm{O}^{2-}$ to $\\mathrm{Ni}^{3+}$ acceptor states. The crystal lattice is visualized using the VESTA software (Ref. 72).","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG4_a2","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG4_a2","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG4_a2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG4_a2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":500,"height":497,"image_format":"jpeg","image_sha256":"9a5791806465d281c80768f26fe3caf3e6acc16182b3baae9580060376cfe906","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":499,"height":495}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows an idealized crystal lattice composed of alternating metal cations and oxygen anions arranged in a regular, repeating pattern. The schematic emphasizes lattice symmetry and coordination rather than atomic-scale distortion or defects. All lattice sites are occupied, representing a defect-free bulk structure that serves as a reference for comparison with defective or modified lattices.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An ideal lattice provides a baseline for understanding how defects, strain, or dopants alter material behavior. By comparing real structures to this reference, it becomes easier to isolate the effects of imperfections on properties.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Vacancies would break lattice periodicity and introduce local distortions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Regular coordination indicates a balanced bonding environment, which generally corresponds to lower internal strain and higher structural stability in the bulk material.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Thin films often deviate from ideal structures due to defects or interfaces. Having a clear lattice model helps interpret how those deviations influence measured properties such as conductivity, diffusion, or mechanical strength.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_13_fig2.jpg","caption":"Fig.2 Top and side views of the model systems for pristine and defective graphenes. Respective unit cell are represented by solid, pale black lines. Colour code, C: brown; O: red; H: pink-white; Pt: grey.","id":"validation/atomic-layer-deposition/simulation-usecase/13/fig2","sample_id":"atomic-layer-deposition/simulation-usecase/13/fig2","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/Bora Karasulu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1108,"height":1206,"image_format":"jpeg","image_sha256":"422a58bd76d860052d4771afe73f393c8cf1b9166e6b73112d8ecec94c976d3b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":1,"width":561,"height":390},{"panel_id":"b","x":560,"y":1,"width":543,"height":386},{"panel_id":"c","x":9,"y":379,"width":548,"height":398},{"panel_id":"d","x":554,"y":379,"width":545,"height":398},{"panel_id":"e","x":6,"y":768,"width":557,"height":428},{"panel_id":"f","x":563,"y":773,"width":531,"height":428}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Top and side views of pristine graphene, showing the honeycomb lattice structure with all carbon atoms in sp² hybridization. Unit cells are indicated, and atom types are color-coded.\"},{\"panel_id\":\"b\",\"text\":\"Top and side views of graphene with a monovacancy defect, illustrating the missing carbon atom and the resulting local reconstruction in the lattice.\"},{\"panel_id\":\"c\",\"text\":\"Top and side views of graphene with a 585 divacancy defect, showing two adjacent missing carbon atoms and the formation of a 5–8–5 ring configuration.\"},{\"panel_id\":\"d\",\"text\":\"Top and side views of graphene containing a 558-grain boundary (GB), highlighting the periodic arrangement of 5- and 8-membered rings along the boundary.\"},{\"panel_id\":\"e\",\"text\":\"Top and side views of graphene with an oxygenated grain boundary, showing O atoms bonded at the GB sites and structural modifications due to oxidation.\"},{\"panel_id\":\"f\",\"text\":\"Top and side views of graphene with a hydrogenated grain boundary, showing H atoms terminating dangling bonds at the GB, stabilizing the structure for ALD modeling.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Graphene model | Description |\\n|---|---|\\n| Pristine graphene (PG) | Perfect sp² carbon lattice with no dangling bonds; inactive toward ALD nucleation |\"},{\"panel_id\":\"b\",\"text\":\"| Graphene model | Description |\\n|---|---|\\n| Graphene with monovacancy (MV) | Single missing carbon atom creating dangling bonds and enhanced reactivity |\"},{\"panel_id\":\"c\",\"text\":\"| Graphene model | Description |\\n|---|---|\\n| Graphene with 585 divacancy (DV) | Reconstructed divacancy defect altering local π-conjugation |\"},{\"panel_id\":\"d\",\"text\":\"| Graphene model | Description |\\n|---|---|\\n| Graphene with grain boundary (GB, 558-type) | Line defect based on STM-derived 558-type grain boundary structure |\"},{\"panel_id\":\"e\",\"text\":\"| Graphene model | Description |\\n|---|---|\\n| Oxygenated grain boundary (epoxy) | Grain boundary decorated with epoxy oxygen groups |\"},{\"panel_id\":\"f\",\"text\":\"| Graphene model | Description |\\n|---|---|\\n| Oxygenated grain boundary (hydroxyl) / hydrogenated GB | Grain boundary functionalized with hydroxyl or hydrogen species, modifying ALD activity |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. Pristine graphene without defects does not provide active sites for Pt ALD nucleation due to the absence of dangling bonds.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 558-type grain boundary.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The structural models illustrate how pristine graphene lacks active sites for ALD due to its intact sp² network, while defects such as vacancies and grain boundaries introduce dangling bonds and modified electronic structures. These features enhance precursor adsorption and chemisorption, enabling localized Pt nucleation. By comparing different defect types and chemical terminations, the models help explain why Pt deposition occurs selectively at defective regions, guiding strategies for controlled, area-selective metal growth on graphene.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Pristine graphene: Perfect sp² lattice with no dangling bonds, low ALD reactivity, Monovacancy graphene: Missing carbon atom creates dangling bonds and high local reactivity, 585 divacancy graphene: Reconstructed defect that disrupts π-conjugation, 558 grain boundary: Line defect with enhanced adsorption affinity, Oxygenated grain boundary (epoxy): Oxygen functionalization increases chemical activity, Hydrogenated grain boundary: Surface termination alters adsorption behavior\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_13_fig3.jpg","caption":"Fig.3 Various (a-c) $\\mathrm{MeCpPtMe_3}$ and (d) $\\mathrm{Pt(acac)_2}$ species chemisorbed on pristine graphene [and the associated chemisorption energies] as predicted at the PBE-D3 level of theory. See Table 1 for the pathways yielding these species. Colour code, C: brown; O: red; H: pink-white; Pt: grey. Me stands for a methyl $(-CH_3)$ group.","id":"validation/atomic-layer-deposition/simulation-usecase/13/fig3","sample_id":"atomic-layer-deposition/simulation-usecase/13/fig3","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/Bora Karasulu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":656,"height":317,"image_format":"jpeg","image_sha256":"cc39fbe6629e30b511055251d9ca68fd9b739d5b38b1b378fa76d6d52c3c9a97","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":9,"width":318,"height":150},{"panel_id":"b","x":328,"y":8,"width":326,"height":153},{"panel_id":"c","x":8,"y":164,"width":320,"height":152},{"panel_id":"d","x":328,"y":163,"width":326,"height":154}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Predicted minimum-energy structure of a MeCpPtMe₃-derived species chemisorbed on pristine graphene, showing non-covalent interactions with Pt remaining above the surface. Chemisorption energy calculated at the PBE-D3 level.\"},{\"panel_id\":\"b\",\"text\":\"Predicted minimum-energy structure of a MeCpPtMe₃-derived species chemisorbed on pristine graphene, showing covalent bonding of Pt to two neighboring carbon atoms, highlighting stronger species-dependent binding behavior. Chemisorption energy calculated at the PBE-D3 level.\"},{\"panel_id\":\"c\",\"text\":\"Predicted minimum-energy structure of another MeCpPtMe₃-derived species on pristine graphene, exhibiting non-covalent interactions with Pt located above the surface. Chemisorption energy calculated at the PBE-D3 level.\"},{\"panel_id\":\"d\",\"text\":\"Predicted minimum-energy structure of Pt(acac)₂ chemisorbed on pristine graphene, showing non-covalent interactions with Pt remaining above the graphene surface. Chemisorption energy calculated at the PBE-D3 level.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Chemisorbed species | Binding type | Graphene interaction distance (Å) |\\n|---|---|---|\\n| MeCpPtMe₂ | Non-covalent | 3.9–4.1 |\"},{\"panel_id\":\"b\",\"text\":\"| Chemisorbed species | Binding type | Graphene interaction distance (Å) |\\n|---|---|---|\\n| MeCpPtMe | Covalent | 2.28–2.44 |\"},{\"panel_id\":\"c\",\"text\":\"| Chemisorbed species | Binding type | Graphene interaction distance (Å) |\\n|---|---|---|\\n| MeCpPtCH₃CH₂ | Non-covalent | 3.9–4.1 |\"},{\"panel_id\":\"d\",\"text\":\"| Chemisorbed species | Binding type | Graphene interaction distance (Å) |\\n|---|---|---|\\n| Pt(acac)₂ | Not explicitly detailed | — |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Removing ligands exposes d-orbital electrons on Pt, enabling covalent bonding to graphene in certain species, as seen in MeCpPtMe.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"MeCpPtMe (panel b) exhibits covalent bonding to two neighboring carbon atoms, whereas MeCpPtMe₂ (panel a) and MeCpPtCH₃CH₂ (panel c) remain non-covalently bound at larger distances (~3.9–4.1 Å).\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding the binding behavior of Pt species on graphene informs which precursors can effectively deposit Pt. Species that covalently bond, such as MeCpPtMe, are more likely to act as nucleation sites for controlled Pt deposition, whereas non-covalently bound species remain mobile and may not contribute to film growth. Insights into ligand effects, orbital availability, and steric hindrance help optimize precursor selection and ALD conditions for uniform and area-selective Pt deposition on graphene surfaces.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Availability of d-orbital electrons on Pt, Removal of ligands from the Pt precursor, Saturation of graphene valence orbitals, Steric effects of methyl or larger substituents, Nature of the Pt precursor (MeCpPtMe₃ vs Pt(acac)₂)\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_13_fig_5.jpg","caption":"Fig. 5 Ball-and-stick representation of the lowest-energy chemisorbed $\\mathrm{MeCpPtMe}_3$ species on various graphene surfaces. Relative energies with respect to the separated species are given in brackets. Colour code, C: brown; O: red; H: pink-white; Pt: grey.","id":"validation/atomic-layer-deposition/simulation-usecase/13/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/13/fig_5","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/Bora Karasulu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":653,"height":439,"image_format":"jpeg","image_sha256":"3adccecb9ede8ee3ceb30fa5fc2af2c9c5fca89bed1370f225272b385f3344e8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":6,"width":315,"height":145},{"panel_id":"b","x":329,"y":4,"width":326,"height":130},{"panel_id":"c","x":3,"y":141,"width":336,"height":148},{"panel_id":"d","x":341,"y":135,"width":302,"height":151},{"panel_id":"e","x":341,"y":135,"width":302,"height":151},{"panel_id":"f","x":310,"y":284,"width":345,"height":155}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Ball-and-stick model of MeCpPtMe₃ chemisorbed on pristine graphene, showing adsorption geometry and minimal basal-plane distortion. Relative energy with respect to separated species is indicated.\"},{\"panel_id\":\"b\",\"text\":\"Ball-and-stick model of MeCpPtMe₃ chemisorbed on graphene with a 585 divacancy defect, showing local structural distortion and altered adsorption geometry.\"},{\"panel_id\":\"c\",\"text\":\"Ball-and-stick model of MeCpPtMe₃ chemisorbed on graphene with a bare grain boundary, illustrating adsorption-induced buckling along the boundary region.\"},{\"panel_id\":\"d\",\"text\":\"Ball-and-stick model of MeCpPtMe₃ chemisorbed on epoxyated graphene, highlighting adsorption at oxygen-functionalized sites and local basal-plane distortion.\"},{\"panel_id\":\"e\",\"text\":\"Ball-and-stick model of MeCpPtMe₃ chemisorbed on hydroxylated graphene, showing adsorption at hydroxyl-functionalized sites with induced structural buckling.\"},{\"panel_id\":\"f\",\"text\":\"Ball-and-stick model of MeCpPtMe₃ chemisorbed on hydrogenated graphene grain boundaries, illustrating adsorption geometry and local surface distortion, with relative energies indicated.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Surface type | Binding site / Feature |\\n|---|---|\\n| Pristine graphene | Basal plane |\"},{\"panel_id\":\"b\",\"text\":\"| Surface type | Binding site / Feature |\\n|---|---|\\n| Graphene MV | Defective site |\"},{\"panel_id\":\"c\",\"text\":\"| Surface type | Binding site / Feature |\\n|---|---|\\n| Graphene DV 585 | Divacancy site |\"},{\"panel_id\":\"d\",\"text\":\"| Surface type | Binding site / Feature |\\n|---|---|\\n| GB | Defect line |\"},{\"panel_id\":\"e\",\"text\":\"| Surface type | Binding site / Feature |\\n|---|---|\\n| GB – oxygenated | Epoxy or hydroxyl site |\"},{\"panel_id\":\"f\",\"text\":\"| Surface type | Binding site / Feature |\\n|---|---|\\n| GB – hydrogenated | Hydrogenated site |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Oxygenation or hydrogenation of grain boundaries causes buckling in the graphene basal plane, altering the chemisorption geometry of MeCpPtMe₃.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Functionalized grain boundaries (oxygenated or hydrogenated GBs) show the most pronounced buckling due to sp³ hybridization of carbon atoms.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The variation in adsorption geometries and the structural distortions caused by defects or functionalization indicate that Pt ALD will be highly surface-sensitive. Pristine graphene allows limited binding, while defective or functionalized surfaces promote stronger chemisorption. This suggests that controlled defect engineering or surface functionalization could be used to optimize Pt nucleation and growth in ALD processes, enhancing coverage and uniformity on graphene-based substrates.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Buckling of the basal plane, Formation of folds or distortions at line defects, Local rehybridization of carbon bonds to sp³ at functionalized sites, Variation in adsorption geometry depending on surface composition\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_13_fig_6.jpg","caption":"Fig. 6 Ball-and-stick representation of the models (supercells) used for simulating graphene oxide in the current DFT calculations. Colour code, C: brown; O: red; H: pink-white; Pt: grey.","id":"validation/atomic-layer-deposition/simulation-usecase/13/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/13/fig_6","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"},{"panel_id":"h","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/Bora Karasulu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1102,"height":1589,"image_format":"jpeg","image_sha256":"c09b9d4f4a10404ef35aa202097051b804921f5e3efb2246ca028e77cb78a828","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":7,"width":529,"height":372},{"panel_id":"b","x":556,"y":13,"width":543,"height":360},{"panel_id":"c","x":5,"y":382,"width":543,"height":374},{"panel_id":"d","x":550,"y":376,"width":549,"height":387},{"panel_id":"e","x":13,"y":759,"width":544,"height":457},{"panel_id":"f","x":557,"y":759,"width":537,"height":433},{"panel_id":"g","x":6,"y":1214,"width":546,"height":362},{"panel_id":"h","x":557,"y":1197,"width":537,"height":384}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Ball-and-stick model of graphene oxide (GO) supercell with an ordered distribution of epoxy groups on one side, showing slight basal-plane buckling.\"},{\"panel_id\":\"b\",\"text\":\"Ball-and-stick model of GO with ordered hydroxyl groups on one side, illustrating structural distortion due to hydrogen bonding.\"},{\"panel_id\":\"c\",\"text\":\"Ball-and-stick model of GO with mixed epoxy and hydroxyl groups on one side, showing combined effects on planarity and surface geometry.\"},{\"panel_id\":\"d\",\"text\":\"Ball-and-stick model of GO with epoxy groups on both sides of the sheet, highlighting increased buckling compared to single-side functionalization.\"},{\"panel_id\":\"e\",\"text\":\"Ball-and-stick model of GO with hydroxyl groups on both sides, showing enhanced basal-plane distortion due to hydrogen bonding interactions.\"},{\"panel_id\":\"f\",\"text\":\"Ball-and-stick model of GO with mixed epoxy and hydroxyl groups on both sides, illustrating complex buckling patterns and local structural perturbations.\"},{\"panel_id\":\"g\",\"text\":\"Ball-and-stick model of epoxy-doped GO used for investigating oxygen doping effects on ALD reactivity, showing planar distortion at doped sites.\"},{\"panel_id\":\"h\",\"text\":\"Ball-and-stick model of another epoxy-doped GO variant, highlighting local structural modifications and surface buckling relevant for ALD chemistry.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Functionalization | Surface Side | Notes |\\n|---|---|---|\\n| Epoxy | One side | Ordered, planar GO layer |\"},{\"panel_id\":\"b\",\"text\":\"| Functionalization | Surface Side | Notes |\\n|---|---|---|\\n| Hydroxyl | One side | Ordered, planar GO layer |\"},{\"panel_id\":\"c\",\"text\":\"| Functionalization | Surface Side | Notes |\\n|---|---|---|\\n| Epoxy + Hydroxyl mixture | One side | Ordered, planar GO layer |\"},{\"panel_id\":\"d\",\"text\":\"| Functionalization | Surface Side | Notes |\\n|---|---|---|\\n| Epoxy | Both sides | Ordered, planar GO layer |\"},{\"panel_id\":\"e\",\"text\":\"| Functionalization | Surface Side | Notes |\\n|---|---|---|\\n| Hydroxyl | Both sides | Ordered, planar GO layer |\"},{\"panel_id\":\"f\",\"text\":\"| Functionalization | Surface Side | Notes |\\n|---|---|---|\\n| Epoxy + Hydroxyl mixture | Both sides | Slight buckling due to random distribution |\"},{\"panel_id\":\"g\",\"text\":\"| Functionalization | Surface Side | Notes |\\n|---|---|---|\\n| Epoxy-doped | One side | Oxygen doping, low likelihood, tested for ALD reactivity |\"},{\"panel_id\":\"h\",\"text\":\"| Functionalization | Surface Side | Notes |\\n|---|---|---|\\n| Epoxy-doped | Both sides | Oxygen doping, low likelihood, tested for ALD reactivity |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Double-sided functionalizations, especially with mixed distributions, tend to increase buckling compared to single-sided, ordered functionalizations.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ordered distributions of epoxy and hydroxyl groups preserve planarity, while random or mixed distributions increase sp3 carbon content and cause buckling.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Functionalization affects both planarity and uniformity of the GO surface, which are critical for atomic layer deposition (ALD) applications. Ordered single- or double-sided functionalizations maintain a mostly planar layer, allowing for uniform seeding and controlled film growth. In contrast, random distributions or heavy buckling can hinder film uniformity and thickness control, reducing the effectiveness of GO as a seeding layer. Epoxy-doped models are additionally useful for studying enhanced reactivity in ALD, although their formation is less likely experimentally.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Type of functional group (epoxy or hydroxyl), Side-specific functionalization (one or both sides), Distribution pattern (ordered vs. random), Density of functional groups, Epoxy-doped versus hydroxyl-doped modifications\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_13_fig_7.jpg","caption":"Fig. 7 Ball-and-stick representation of the lowest-energy (left) physi-sorbed and (right) chemisorbed species of (top) $\\mathrm{MeCpPtMe}_3$ and (bottom) $\\mathsf{Pt(acac)}_2$ on selected graphene oxide models investigated in the current DFT calculations. Relative energies with respect to the separated species are given in brackets. Colour code, C: brown; O: red; H: pink-white; Pt: grey. Hydrogen bonds are represented by black dashed lines.","id":"validation/atomic-layer-deposition/simulation-usecase/13/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/13/fig_7","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/Bora Karasulu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":639,"height":1442,"image_format":"jpeg","image_sha256":"883e4b26d74c0ce624282370a7afcd35e6693cbd7bc2e617c50ea154f62ac2d9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":7,"width":625,"height":511},{"panel_id":"b","x":2,"y":527,"width":637,"height":423},{"panel_id":"c","x":5,"y":952,"width":634,"height":487}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Optimized structures of MeCpPtMe₃ and Pt(acac)₂ on epoxydated graphene oxide (single-sided), showing both physisorbed (left) and chemisorbed (right) states. Relative energies with respect to separated species are indicated, and hydrogen bonding interactions are illustrated.\"},{\"panel_id\":\"b\",\"text\":\"Optimized structures of MeCpPtMe₃ and Pt(acac)₂ on hydroxylated graphene oxide (single-sided), showing physisorbed and chemisorbed species with corresponding relative energies. Hydrogen bonding interactions are highlighted.\"},{\"panel_id\":\"c\",\"text\":\"Optimized structures of MeCpPtMe₃ and Pt(acac)₂ on mixed graphene oxide with random distribution of epoxy and hydroxyl groups, showing physisorbed and chemisorbed species. Relative energies and hydrogen bonding interactions are indicated, highlighting stability differences compared to single-functionalized surfaces.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Species | ΔEp [eV] | ΔEc [eV] | ΔEr [eV] |\\n|---|---|---|---|\\n| Pt(acac)₂ | -1.96 | -0.48 | 1.48 |\"},{\"panel_id\":\"b\",\"text\":\"| Species | ΔEp [eV] | ΔEc [eV] | ΔEr [eV] |\\n|---|---|---|---|\\n| Pt(acac)₂ | - | -4.38 | - |\"},{\"panel_id\":\"c\",\"text\":\"| Species | ΔEp [eV] | ΔEc [eV] | ΔEr [eV] |\\n|---|---|---|---|\\n| Pt(acac)₂ | - | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. DFT calculations indicate that chemisorption proceeds through stable intermediate species, including the abstraction of hydroxyl groups, which affects the overall binding process.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Chemisorbed Pt(acac)2 on hydroxylated GO is more stable (ΔEc = −4.38 eV) compared to epoxydated GO (ΔEc = −0.48 eV).\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Pt(acac)2 chemisorption is hindered on all types of GO due to high endothermicity, large activation barriers, and formation of very stable intermediate species where Pt does not remain bonded to the surface. On epoxydated surfaces, the chemisorbed species is energetically unfavorable, and on hydroxylated surfaces, intermediates stabilize Pt away from the surface. This prevents efficient nucleation and deposition, limiting its practical use in ALD.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Type of functional groups (epoxy vs hydroxyl), Distribution of functional groups (single-sided vs mixed), Availability of hydrogen atoms for by-product formation, Presence of intermediate charge-separated subunits, Hydrogen bonding interactions with Pt species\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_24_fig_1.jpg","caption":"Fig. 1. The (a) $\\mathrm{Si(OH)_3 - OH}$ b $\\mathrm{SiH_3OS(OH)_2 - OH}$ c $\\mathrm{(SiH_3O)_3Si - OH}$ d $\\mathrm{Si(OH)_3OZrCl_3}$ e $\\mathrm{SiH_3OS(OH)_2OZrCl_3}$ and (f) $\\mathrm{(SiH_3O)_3SiOZrCl_3}$ clusters used in this study.","id":"validation/atomic-layer-deposition/simulation-usecase/24/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/24/fig_1","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/Joseph H. Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":767,"height":631,"image_format":"jpeg","image_sha256":"e6789d0c0843a6b933c031495f9e2fa5dfd3b5cf4d313efa8fece9b45f4aabc3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":12,"y":19,"width":172,"height":179},{"panel_id":"b","x":231,"y":0,"width":197,"height":202},{"panel_id":"c","x":463,"y":22,"width":304,"height":176},{"panel_id":"d","x":10,"y":358,"width":167,"height":221},{"panel_id":"e","x":222,"y":347,"width":188,"height":221},{"panel_id":"f","x":539,"y":314,"width":181,"height":245}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image displays the molecular structure, of Si(OH)_3 - OH.\"},{\"panel_id\":\"b\",\"text\":\"The image displays the molecular structure, of SiH_3OS(OH)_2 - OH.\"},{\"panel_id\":\"c\",\"text\":\"The image displays the molecular structure, of (SiH_3O)_3Si - OH.\"},{\"panel_id\":\"d\",\"text\":\"The image displays the molecular structure, of Si(OH)_3OZrCl_3.\"},{\"panel_id\":\"e\",\"text\":\"The image displays the molecular structure, of SiH_3OS(OH)_2OZrCl_3.\"},{\"panel_id\":\"f\",\"text\":\"The image displays the molecular structure, of (SiH_3O)_3SiOZrCl_3.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There is both a silicon atom and a zirconium atom in the precursor, so both SiO2 and ZrO2. In this case ZrO2 is more likely.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Red\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ozone, oxygen plasma\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Silicon atoms have four valence electrons, this can be deduced from the fact that the silicon atoms form four single electron bonds with other atoms.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_24_fig_5.jpg","caption":"Fig. 5. Illustration of parameters shown in Table 1: (A) $\\mathrm{Zr - Cl}$ bond of the adsorbed water complex, (B) the distance between $\\mathrm{HCl(a)}$ and the O atom of the $\\mathrm{Zr - OH^{*}}$ site, and (C) the minimum distance between $\\mathrm{HCl(a)}$ and $\\mathrm{H}$ atoms used to terminate the $\\mathrm{Si - O}$ bond.","id":"validation/atomic-layer-deposition/simulation-usecase/24/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/24/fig_5","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/Joseph H. Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":589,"height":317,"image_format":"jpeg","image_sha256":"f1404f1ca1f2ea1d9e26c994453fc624e09326821923622d08580503dfb138ec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":253,"height":317},{"panel_id":"b","x":283,"y":24,"width":306,"height":293}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image depicts a molecular structure diagram illustrating the arrangement of atoms in a molecule.\"},{\"panel_id\":\"b\",\"text\":\"The image depicts a molecular structure diagram illustrating the arrangement of atoms in a molecule, where HCl is desorbed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The interaction of HCl with the newly formed OH bond as well as the OH bond from the SiO2 substrate.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This is usually not done as this would require way more computing power as all chemical bonds in a substrate can have an influence on the reacting substrate.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reaction is similar, but it is likely that it will be more complex as there are also backbonds of the substrate with reacting surface groups.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"pink.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_39_ab829c08613466b1bd1b39ce38d7de3fe4b532c08a4a38a66a80ce13f12f4ee0.jpg","caption":"Fig.10The inil, tion and final stes in the ction btwe the MRA and two water molules. The second water molule stalizes the transition and final states lower the activation energy by $0.24\\in V$","id":"validation/atomic-layer-deposition/simulation-usecase/39/ab829c08613466b1bd1b39ce38d7de3fe4b532c08a4a38a66a80ce13f12f4ee0","sample_id":"atomic-layer-deposition/simulation-usecase/39/ab829c08613466b1bd1b39ce38d7de3fe4b532c08a4a38a66a80ce13f12f4ee0","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/ab829c08613466b1bd1b39ce38d7de3fe4b532c08a4a38a66a80ce13f12f4ee0.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/ab829c08613466b1bd1b39ce38d7de3fe4b532c08a4a38a66a80ce13f12f4ee0.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1267,"height":261,"image_format":"jpeg","image_sha256":"b4540161e1c3724d8f000e77232ddddbbbdb3a7191cfa8e1322425c951c8e297","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":7,"width":382,"height":255},{"panel_id":"b","x":445,"y":3,"width":394,"height":257},{"panel_id":"c","x":892,"y":70,"width":373,"height":189}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_39_ad9b3cb6174a00ce692e05e28ca5e82c5e77c079265a39f78a3f8949736e3557.jpg","caption":"Fig.4h t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t h","id":"validation/atomic-layer-deposition/simulation-usecase/39/ad9b3cb6174a00ce692e05e28ca5e82c5e77c079265a39f78a3f8949736e3557","sample_id":"atomic-layer-deposition/simulation-usecase/39/ad9b3cb6174a00ce692e05e28ca5e82c5e77c079265a39f78a3f8949736e3557","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/ad9b3cb6174a00ce692e05e28ca5e82c5e77c079265a39f78a3f8949736e3557.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/ad9b3cb6174a00ce692e05e28ca5e82c5e77c079265a39f78a3f8949736e3557.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1088,"height":719,"image_format":"jpeg","image_sha256":"eceb79522a77b8ddf723262216568682f2fe8f6a85dde1d0f6d619c0c5bfe7a0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":66,"y":11,"width":458,"height":374},{"panel_id":"b","x":572,"y":12,"width":464,"height":373},{"panel_id":"c","x":15,"y":420,"width":530,"height":295},{"panel_id":"d","x":555,"y":420,"width":530,"height":294}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_39_fig_1.jpg","caption":"Fig. 1 Side-view of the hydroxylated surfaces formed from dissociatively adsorbed water. Two kinds of hydroxyl groups are present, the higher group formed from the water molecule and the lower one formed with the dissociated hydrogen and surface oxygen. A monolayer coverage is achieved when four water molecules adsorb onto a $2\\times 2$ cell which corresponds to a surface concentration of $16\\mu \\mathrm{mol}\\mathrm{m}^{-2}$ . Only three molecules are visible from this view due to overlap.","id":"validation/atomic-layer-deposition/simulation-usecase/39/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/39/fig_1","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":622,"height":286,"image_format":"jpeg","image_sha256":"2629895235c1b47c31633c4d33c18124c32522b2a65bf2583fa97b0c12d29a94","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":622,"height":286}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_39_fig_2.jpg","caption":"Fig. 2 Side-view of the gibbsite-like surface. Stoichiometric gibbsite-layer is formed when the top aluminium atoms are replaced with three hydrogen atoms. Gibbsite-like surface gives two vertical and one horizontal hydroxyl groups per unit cell. Gibbsite-like surface corresponds to a hydroxyl surface concentration of $25\\mu \\mathrm{mol}\\mathrm{m}^{-2}$ .","id":"validation/atomic-layer-deposition/simulation-usecase/39/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/39/fig_2","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":622,"height":250,"image_format":"jpeg","image_sha256":"1d314ff408467e5070b6f76c254704420e99be7fd8b13288b982ff6db85a0525","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":622,"height":250}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_39_fig_3.jpg","caption":"Fig. 3 Adsorbed TMA on the hydroxylated surface (left) and on the gibbsite surface (right). Brown, red, black and white spheres represent aluminium, oxygen, carbon and hydrogen, respectively. The TMA is more distorted from its planar structure on the gibbsite surface than on the hydroxylated surface. However, the adsorption energy on the gibbsite-surface is $0.5\\text{eV}$ more exothermic than on the hydroxylated surface. There is no differences in the adsorption bond lengths between the two surface models.","id":"validation/atomic-layer-deposition/simulation-usecase/39/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/39/fig_3","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1205,"height":453,"image_format":"jpeg","image_sha256":"fbf4445d29a7a666c20b133bb1bb6109177d554e02ec26b0ede7aadcb93717a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":570,"height":448},{"panel_id":"b","x":575,"y":4,"width":629,"height":444}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_39_fig_5.jpg","caption":"Fig. 5 An example of a bridged structure. The bridged structure stabilizes the adsorbed structure and increases the adsorption energy of the TMA.","id":"validation/atomic-layer-deposition/simulation-usecase/39/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/39/fig_5","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":558,"height":403,"image_format":"jpeg","image_sha256":"2ede5f0e0a334ced5a8de18b1173716feb322a2ac28d9de4f5c71773a854a866","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":558,"height":403}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_39_fig_6.jpg","caption":"Fig. 6 The initial, transition and final states in the second ligand-exchange reaction. The initially linear Al-O-Al bond needs to bend from $180^{\\circ}$ angle down to $140^{\\circ}$ in order to reach the transition state. Notice that a proton in transferred to the adsorbent oxygen after the transition state.","id":"validation/atomic-layer-deposition/simulation-usecase/39/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/39/fig_6","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1367,"height":325,"image_format":"jpeg","image_sha256":"4cce2494c557f9ad1d4c6d54413e8b0aa61e9d0e58cb67324ff68ddded5939d0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":449,"height":319},{"panel_id":"b","x":451,"y":3,"width":462,"height":319},{"panel_id":"c","x":917,"y":1,"width":447,"height":319}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_39_fig_7.jpg","caption":"Fig. 7 The initial, transition and final states for the proposed third ligand-exchange reaction. The final dissociation of the TMA leads to densification of the surface which is not observed in the other reaction pathways. However, the ligand-exchange reactions are predicted to stop at the second dissociation due to the high barrier for the third reaction.","id":"validation/atomic-layer-deposition/simulation-usecase/39/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/39/fig_7","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1375,"height":278,"image_format":"jpeg","image_sha256":"c387a3ccfd88ac8ea4c7b74bc3a41a7435599a4439a03faec1f641261badb0ac","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":454,"height":275},{"panel_id":"b","x":459,"y":1,"width":451,"height":275},{"panel_id":"c","x":914,"y":0,"width":461,"height":277}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_39_fig_8.jpg","caption":"Fig. 8 The initial reaction for between DMA and water. From left to right, the initial, transition and final stage of the reaction. Single DMA in a $2 \\times 2$ unit self corresponds to a methyl-surface concentration of $4 \\mu \\mathrm{mol} \\mathrm{m}^{-2}$ .","id":"validation/atomic-layer-deposition/simulation-usecase/39/fig_8","sample_id":"atomic-layer-deposition/simulation-usecase/39/fig_8","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1322,"height":350,"image_format":"jpeg","image_sha256":"69cb635a7f7fe6322a58b2762b34d6a88ded6f346c0d87a65b17131d9b838c28","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":431,"height":345},{"panel_id":"b","x":438,"y":1,"width":438,"height":347},{"panel_id":"c","x":882,"y":0,"width":438,"height":350}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_39_fig_9.jpg","caption":"Fig. 9 The MMA is not able to react with a water molecule. However, it is possible for a water molecule to break down the inert and closed structure of the MMA. Barrier for this adsorption process is $0.26 \\mathrm{eV}$ .","id":"validation/atomic-layer-deposition/simulation-usecase/39/fig_9","sample_id":"atomic-layer-deposition/simulation-usecase/39/fig_9","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1367,"height":250,"image_format":"jpeg","image_sha256":"86e67bb4c66c85cd04c9ffd0bc997eea9b64d85a6ddef682713a3731057a3fd6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":882,"y":0,"width":438,"height":350},{"panel_id":"b","x":456,"y":2,"width":448,"height":247},{"panel_id":"c","x":907,"y":0,"width":458,"height":247}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_50_fig1.jpg","caption":"Fig.1 Atomic configurations for the (a) hexagonal $\\beta -\\mathrm{Si}_3\\mathrm{N}_4$ unit cell, (b) bare $\\beta -\\mathrm{Si}_3\\mathrm{N}_4(0001) - (1\\times 1)$ surface; and (c) $\\mathrm{H / NH_2}$ -terminated N-rich surface containing three primary $(\\mathbb{N}^{1^{\\circ}})$ , three secondary $(\\mathbb{N}^{2^{\\circ}})$ and one tertiary $(\\mathbb{N}^{3^{\\circ}})$ amine groups. Yellow, blue, and white balls represent Si, N, and H atoms, respectively.","id":"validation/atomic-layer-deposition/simulation-usecase/50/fig1","sample_id":"atomic-layer-deposition/simulation-usecase/50/fig1","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/Gregory Hartmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":658,"height":369,"image_format":"jpeg","image_sha256":"d1805a6f91ba9e14873ea9a0d252bfdc4d043526ded09bd7d12347446765a85c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":41,"y":6,"width":374,"height":132},{"panel_id":"b","x":6,"y":141,"width":319,"height":225},{"panel_id":"c","x":320,"y":136,"width":339,"height":234}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure shows the hexagonal β-Si3N4 unit cell, illustrating the atomic arrangement of Si and N atoms along the crystallographic a and c directions.\"},{\"panel_id\":\"b\",\"text\":\"The subfigure presents the bare β-Si3N4 (0001)-(1×1) surface, highlighting the surface atomic network and exposed nitrogen coordination.\"},{\"panel_id\":\"c\",\"text\":\"The subfigure shows an H/NH2-terminated N-rich β-Si3N4 (0001) surface, identifying primary (N1°), secondary (N2°), and tertiary (N3°) amine groups bonded to surface nitrogen atoms.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The unit cell shows a hexagonal crystal structure in which silicon and nitrogen atoms form a covalently bonded network. The ordered arrangement along the a and c lattice directions reflects the long-range periodicity that defines the bulk β-Si3N4 phase.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Primary (N1°), secondary (N2°), and tertiary (N3°) amine groups.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The (0001)-(1×1) surface.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_50_fig7.jpg","caption":"Fig.7 Available N atoms for the nucleophilic attack of $-\\mathrm{SiH}_2\\mathrm{Cl}$ to form $>\\mathrm{SiH}_2$ , where the blue ball indicates the N atom $(\\mathrm{N}^{\\mathrm{R}})$ including $-\\mathrm{SiH}_2\\mathrm{Cl}$ . Red and orange balls indicate $\\mathrm{N}^{1^{\\circ}}$ and $\\mathrm{N}^{2^{\\circ}}$ , respectively. The inset details the atomic configuration of $>\\mathrm{SiH}_2$ .","id":"validation/atomic-layer-deposition/simulation-usecase/50/fig7","sample_id":"atomic-layer-deposition/simulation-usecase/50/fig7","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/Gregory Hartmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":578,"height":372,"image_format":"jpeg","image_sha256":"b42708fa09c5b903e498e738961328bfa7a7a556af7827508a6a7fc04fceb441","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":578,"height":372},{"panel_id":"b","x":395,"y":8,"width":180,"height":141}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure shows the surface nitrogen network highlighting available N atoms for nucleophilic attack by −SiH2Cl. Different nitrogen environments (NR, N1°, and N2°) are marked to distinguish their local coordination and reactivity.\"},{\"panel_id\":\"b\",\"text\":\"The inset shows a close-up atomic configuration of the >SiH2 species after bond formation, emphasizing the local N–Si–N bonding geometry.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Subfigure (a) labels different nitrogen environments on the surface, distinguishing reactive NR sites from N1° and N2° configurations. This labeling highlights which nitrogen atoms are geometrically and chemically accessible for nucleophilic attack by −SiH2Cl.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"NR.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The N–Si–N bond angle.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_50_fig_4.jpg","caption":"Fig. 4 Side (left panels) and top (right panels) views for molecularly adsorbed DCS at the lowest energy site [(a)] and an alternative site above the $\\mathbb{N}^{1^{\\circ}}$ groups [(b)]. Green, yellow, and white balls in DCS represent Cl, Si, and H atoms, respectively.","id":"validation/atomic-layer-deposition/simulation-usecase/50/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/50/fig_4","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/Gregory Hartmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":880,"height":656,"image_format":"jpeg","image_sha256":"288b6782bcdb58bb0bfc945817aea8437927a876e9737e2d4f28f747aa536c0a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":3,"width":872,"height":322},{"panel_id":"b","x":4,"y":327,"width":872,"height":327}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure shows side and top views of DCS adsorbed at the lowest-energy site on the surface, with the Si center interacting with surface nitrogen atoms. The orientation highlights how the Cl ligands and H atom are arranged relative to nearby N1°, N2°, and N3° surface sites.\"},{\"panel_id\":\"b\",\"text\":\"The subfigure shows side and top views of DCS adsorbed at an alternative site directly above N1° groups. Compared to (a), the adsorption geometry is shifted, changing how the Si–N interaction aligns with the surrounding surface nitrogen network.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In subfigure (a), the DCS molecule is oriented so that the silicon atom directly interacts with surface nitrogen atoms, forming a stable adsorption configuration. The Cl ligands and H atom are positioned away from the surface, which reduces steric crowding and helps stabilize this lowest-energy site.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A Si–N coordination interaction.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"N1° groups.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_50_fig_5.jpg","caption":"Fig. 5 Side (left) and top (right) views of the DCS-amine adduct. Green, yellow, white, and blue balls represent Cl, Si, H, and N atoms, respectively. Wannier centers are also indicated in grey balls.","id":"validation/atomic-layer-deposition/simulation-usecase/50/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/50/fig_5","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/Gregory Hartmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":658,"height":256,"image_format":"jpeg","image_sha256":"19a44bef0b850a267160178a89140be98b38069769fdaec08294cc8b23bef5ca","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":5,"width":342,"height":250},{"panel_id":"b","x":355,"y":6,"width":300,"height":250}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure shows a side view of the DCS–amine adduct, highlighting the bonding between the amine nitrogen and the silicon center, along with surrounding Cl and H atoms. The spatial arrangement makes the coordination geometry and nearby Wannier centers visible.\"},{\"panel_id\":\"b\",\"text\":\"The subfigure presents a top view of the same DCS–amine adduct on the surface, showing how the amine group sits relative to the surrounding lattice and neighboring atoms.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The side view shows the amine nitrogen directly coordinated to the silicon atom, forming the DCS–amine adduct. The surrounding Cl and H atoms define the local bonding environment, making it clear how the amine approaches and binds to the silicon site.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Silicon.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A top view.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_50_fig_6.jpg","caption":"Fig. 6 AIMD snapshots of the DCS decomposition reaction producing $\\mathsf{H}^{+}$ and $\\mathsf{Cl}^{-}$ , corresponding to the $(c) \\rightarrow (d)$ reaction in Fig. 2. Red dotted lines indicate the hydrogen bonds associated with $\\mathsf{H}^{+}$ transfer.","id":"validation/atomic-layer-deposition/simulation-usecase/50/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/50/fig_6","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/Gregory Hartmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1177,"height":231,"image_format":"jpeg","image_sha256":"10bccf2d6bdc1df0f80b8f02b0face41a9471e21427822c671d54aa048534007","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":5,"width":361,"height":224},{"panel_id":"b","x":398,"y":6,"width":379,"height":221},{"panel_id":"c","x":809,"y":5,"width":364,"height":223}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure shows the initial AIMD snapshot (time t) of the DCS molecule interacting with the surface, where hydrogen atoms are positioned close to neighboring nitrogen sites. Red dotted lines highlight hydrogen-bond interactions involved in the early stage of proton transfer.\"},{\"panel_id\":\"b\",\"text\":\"The subfigure shows an intermediate snapshot at t+27 fs, where hydrogen atoms begin to move away from their original positions, indicating the onset of H⁺ transfer during DCS decomposition.\"},{\"panel_id\":\"c\",\"text\":\"The subfigure shows a later snapshot at t+124 fs, where proton transfer to a surface nitrogen has occurred and chloride formation is evident, consistent with DCS decomposition into H⁺ and Cl⁻ as indicated by the AIMD trajectory.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In subfigure (a), the DCS molecule is still largely intact and positioned near the surface, with hydrogen atoms forming short contacts with nearby nitrogen atoms. These interactions, marked by red dotted lines, indicate hydrogen bonding that precedes proton transfer.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"H⁺ and Cl⁻, consistent with DCS decomposition.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The onset of hydrogen atom transfer away from the DCS molecule.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_1.jpg","caption":"Figure 1. Optimized structure of the hydroxylated $\\mathrm{SiO}_2(001)$ surface: a) side view and b) top view.","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_1","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":431,"height":509,"image_format":"jpeg","image_sha256":"9db35bb3b6c16236f789280b55c58811e8f550cf1003feb55996307705df196b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":5,"width":424,"height":158},{"panel_id":"b","x":4,"y":174,"width":424,"height":329}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_10.jpg","caption":"Figure 10. Three different types of surface $-\\mathrm{OH}$ groups of $\\mathrm{O}_2$ type in the proximity of the $-\\mathrm{Si(OH)}_3$ .","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_10","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":313,"height":300,"image_format":"jpeg","image_sha256":"086ccb0b88be1f94af833c3859e865e16a8821f5b691b8e8c05fa0e7c95f4f80","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":313,"height":300}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_11.jpg","caption":"Figure 11. Optimized initial, transition, and final structures for the reaction between $-\\mathrm{Si(OH)}_3$ species and surface $-\\mathrm{OH}$ group: (a) path a, (b) path b, and (c) path c. The green balls represent the migrating H atom.","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_11","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_11","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_11.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":603,"height":606,"image_format":"jpeg","image_sha256":"4caae73a3fe6506c69a446a0ec5be3cae0151ea8a6c88f767957b8ecb2d1e3fe","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":3,"width":593,"height":205},{"panel_id":"b","x":6,"y":217,"width":592,"height":185},{"panel_id":"c","x":6,"y":413,"width":592,"height":192}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_2.jpg","caption":"Figure 2. Optimized structure of DSBAS.","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_2","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":367,"height":428,"image_format":"jpeg","image_sha256":"8d269898c054c41cf2b49e3796d75b1e40ee1fd4b8fa67566f7740a75eb81b53","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":367,"height":428}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_3.jpg","caption":"Figure 3. Optimized initial, transition, and final structures for the dissociative chemisorption of DSBAS on the hydroxylated $\\mathrm{SiO}_2(801)$ surface. The green balls represent the migrating $\\mathrm{H}$ atom.","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_3","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":994,"height":328,"image_format":"jpeg","image_sha256":"8ed0ee20167652f0716e786e5c3ec0da6159cfec25a57409e3c8502b16f2fc0b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":994,"height":328}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_5.jpg","caption":"Figure 5. Three different types of surface $-\\mathrm{OH}$ groups of O2 type in the proximity of the $-\\mathrm{SiH}_3$ .","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_5","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":313,"height":308,"image_format":"jpeg","image_sha256":"5bb57cad5ef49144d34be7922fc42d4aa6f105ff1dad663c6eccabc490a50bdd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":313,"height":308}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_6.jpg","caption":"Figure 6. Optimized initial, transition, and final structures for the reaction between $-\\mathrm{SiH}_3$ species and surface $-\\mathrm{OH}$ group: (a) path a, (b) path b, and (c) path c. The green balls represent the migrating $\\mathrm{H}$ atom.","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_6","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":600,"height":616,"image_format":"jpeg","image_sha256":"25a535149da3931c61ccfdabc2c6e6f54fc7876daae59851c193e0587a4fdd8c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":6,"width":591,"height":199},{"panel_id":"b","x":4,"y":210,"width":589,"height":196},{"panel_id":"c","x":5,"y":413,"width":591,"height":201}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_8.jpg","caption":"Figure 8. Optimized initial, transition, and final structures for the sequential oxidation process of the $-\\mathrm{SiH}_3$ species: (a) step 1, (b) step 2, and (c) step 3.","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_8","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":641,"height":633,"image_format":"jpeg","image_sha256":"af6cc1d16e0d1636f541013fa0cc940cae4deb83486fac1421a85517f56f6943","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":4,"width":631,"height":194},{"panel_id":"b","x":7,"y":216,"width":629,"height":196},{"panel_id":"c","x":8,"y":424,"width":631,"height":204}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig13.jpg","caption":"Fig.13 (a) Physisorption of a Hhfac molecule onto an OH-terminated $\\mathsf{Al}_2\\mathsf{O}_3$ surface where only one O atom is directed towards the surface. From configuration (a) the Hhfac can transition into (b) a monodentate bound configuration with an OH group directed away from the surface.","id":"validation/atomic-layer-etching/experimental-usecase/10/fig13","sample_id":"atomic-layer-etching/experimental-usecase/10/fig13","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig13.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":658,"height":380,"image_format":"jpeg","image_sha256":"b5678daaccd4a0054cad444c585b855e83764216c378be1660b964d21c0d3bcb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":9,"width":302,"height":366},{"panel_id":"b","x":307,"y":1,"width":346,"height":376}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig_2.jpg","caption":"Fig. 2 (a) The general structure of a diketone molecule, where $\\mathsf{R}_1$ and $\\mathsf{R}_2$ can be the same or different terminal groups. The molecule is a keto-enol tautomer; in gas phase enol is the more stable configuration for many diketones.32 (b) Structure of the hexafluoroacetylacetone (Hhfac) molecule used in this work. Hhfac exists nearly exclusively in the enol form, as shown in the figure.32","id":"validation/atomic-layer-etching/experimental-usecase/10/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/10/fig_2","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":667,"height":531,"image_format":"jpeg","image_sha256":"06b973192bd83e9347743385951fbe530968dc0c8b73c4c23a3ffa3f7a95dc5a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":45,"y":7,"width":621,"height":296},{"panel_id":"b","x":45,"y":317,"width":498,"height":215}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_05d40bf8e4185a7d637c9c609c63dc088ef74db80781baadd53a09a35b0b7607.jpg","caption":"","id":"validation/atomic-layer-etching/simulation-usecase/1/05d40bf8e4185a7d637c9c609c63dc088ef74db80781baadd53a09a35b0b7607","sample_id":"atomic-layer-etching/simulation-usecase/1/05d40bf8e4185a7d637c9c609c63dc088ef74db80781baadd53a09a35b0b7607","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/05d40bf8e4185a7d637c9c609c63dc088ef74db80781baadd53a09a35b0b7607.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/05d40bf8e4185a7d637c9c609c63dc088ef74db80781baadd53a09a35b0b7607.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"not_found"},"width":508,"height":1205,"image_format":"jpeg","image_sha256":"6971b1858d4f59f3082a46eff6fd64a751d7b5d867538eabee961854820f9c89","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":4,"y":552,"width":499,"height":641},{"panel_id":"a","x":8,"y":4,"width":497,"height":555}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"MD snapshot of SiO₂ after 200 impacts of 20 eV CF₃⁺ ions, showing early-stage fluorocarbon layer formation at the surface.\"},{\"panel_id\":\"b\",\"text\":\"MD snapshot after 400 impacts, showing a thicker but still C-poor fluorocarbon passivation layer approaching quasi-steady-state.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The fluorocarbon passivation step of layer-by-layer etching, where low-energy CF₃⁺ ions deposit a nanometer-scale reactive layer on SiO₂.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 20 eV, a larger fraction of CF₃⁺ ions reflect from the surface without reacting compared to CF₂⁺. This occurs because CF₃⁺ has fewer carbon dangling bonds available for bonding, and the accumulating F at the surface terminates available sites. Consequently, the passivation film builds up more slowly with CF₃⁺.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Si (red), O (blue), C (gray), F (light gray).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thinner, and it also contains less carbon.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_531fd5bc67740324af3ef5f33b6ab08029b469d0484592d03ac76a6ba17c0830.jpg","caption":"","id":"validation/atomic-layer-etching/simulation-usecase/1/531fd5bc67740324af3ef5f33b6ab08029b469d0484592d03ac76a6ba17c0830","sample_id":"atomic-layer-etching/simulation-usecase/1/531fd5bc67740324af3ef5f33b6ab08029b469d0484592d03ac76a6ba17c0830","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/531fd5bc67740324af3ef5f33b6ab08029b469d0484592d03ac76a6ba17c0830.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/531fd5bc67740324af3ef5f33b6ab08029b469d0484592d03ac76a6ba17c0830.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"not_found"},"width":484,"height":1592,"image_format":"jpeg","image_sha256":"da06b5d6f3ff0b22eede2249cdd8b13433847ca7d0c6ffb5ab21a9c9010e846a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":2,"y":980,"width":473,"height":610},{"panel_id":"b","x":0,"y":478,"width":476,"height":501},{"panel_id":"a","x":0,"y":2,"width":473,"height":473}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Crystalline α-quartz SiO₂ sample (24.57 × 25.53 × 27.6 ų) used as the initial test structure for MD simulations.\"},{\"panel_id\":\"b\",\"text\":\"SiO₂ sample after 100 impacts of 20 eV CF₂⁺ ions, showing initial fluorocarbon layer formation at the surface.\"},{\"panel_id\":\"c\",\"text\":\"SiO₂ sample after 200 impacts, with a thicker fluorocarbon passivation layer (~8 Å) and amorphization of the top ~10 Å of the oxide.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The height within the sample, measured from the bottom of the structure, used for plotting concentration profiles.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Between 100 and 200 impacts, the fluorocarbon passivation layer grows thicker and denser. The surface becomes more disordered, and the amorphized region of the underlying SiO₂ expands. By 200 impacts, the system is approaching quasi-steady-state conditions.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It serves as a fixed boundary condition to simulate a semi-infinite substrate during the MD simulation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Fluorine-rich (F/C ≫ 1), because carbon is sputtered more easily than fluorine at energies above 10 eV.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_8.jpg","caption":"FIG. 8. (Color online) Side view of the $\\mathrm{SiO}_2$ sample after bombardment by $\\mathrm{Ar^{+}}$ ions of energies of (a) $20\\mathrm{eV}$ and (b) $40\\mathrm{eV}$ . This sample had initially a fluorocarbon overlayer grown using $20\\mathrm{eV}$ $\\mathrm{CF}_3^+$ ions (400 impacts).","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_8","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":509,"height":1336,"image_format":"jpeg","image_sha256":"d604f49508cf7f3f02d593d68cc67b9b568e2baf4415fd952f97d83e6e07f3e1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":3,"y":620,"width":505,"height":709},{"panel_id":"a","x":5,"y":11,"width":505,"height":606}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"SiO₂ sample after 400 Ar⁺ impacts at 20 eV. Some fluorocarbon species remain at the surface and the amorphized region is relatively thin.\"},{\"panel_id\":\"b\",\"text\":\"SiO₂ sample after 400 Ar⁺ impacts at 40 eV. The amorphized region extends deeper into the substrate, and less fluorocarbon remains at the surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The amorphized layer is thicker at 40 eV due to deeper ion penetration.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Si (red), O (blue), C (gray), F (light gray).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"400 impacts of 20 eV CF₃⁺ ions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 40 eV, Ar⁺ ions penetrate deeper into the substrate, creating a thicker amorphized region that can degrade crystalline quality. Additionally, at 50 eV and above, etching is no longer self-limiting, making precise layer-by-layer control more difficult.\"}]}]"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_47_fig_1.jpg","caption":"Fig. 1. Structures of tris(diethylamino)aluminum and tris(diisopropyl) aluminum.","id":"validation/atomic-layer-deposition/experimental-usecase/47/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/47/fig_1","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":2,"width":191,"height":232},{"panel_id":"b","x":192,"y":-2,"width":215,"height":238}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/images/fig_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/Wade et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":408,"height":237,"image_format":"jpeg","image_sha256":"98269de15f98d431d699c936c2fd290b8981f631ccc036db1b135b5c855ab15b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG4_a2.jpg","caption":"FIG. 4. Schematic of the crystal lattice of (a) stoichiometric NiO and (b) nonstoichiometric NiO containing Ni vacancies, $\\mathrm{Ni}^{3+}$ states, and $-\\mathrm{OH}$ groups. The arrow indicates electron transfer from $\\mathrm{Ni}^{2+}$ or $\\mathrm{O}^{2-}$ to $\\mathrm{Ni}^{3+}$ acceptor states. The crystal lattice is visualized using the VESTA software (Ref. 72).","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG4_a2","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG4_a2","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows an idealized crystal lattice composed of alternating metal cations and oxygen anions arranged in a regular, repeating pattern. The schematic emphasizes lattice symmetry and coordination rather than atomic-scale distortion or defects. All lattice sites are occupied, representing a defect-free bulk structure that serves as a reference for comparison with defective or modified lattices.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An ideal lattice provides a baseline for understanding how defects, strain, or dopants alter material behavior. By comparing real structures to this reference, it becomes easier to isolate the effects of imperfections on properties.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Vacancies would break lattice periodicity and introduce local distortions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Regular coordination indicates a balanced bonding environment, which generally corresponds to lower internal strain and higher structural stability in the bulk material.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Thin films often deviate from ideal structures due to defects or interfaces. Having a clear lattice model helps interpret how those deviations influence measured properties such as conductivity, diffusion, or mechanical strength.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":0,"width":499,"height":495}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG4_a2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG4_a2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":500,"height":497,"image_format":"jpeg","image_sha256":"9a5791806465d281c80768f26fe3caf3e6acc16182b3baae9580060376cfe906","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_13_fig2.jpg","caption":"Fig.2 Top and side views of the model systems for pristine and defective graphenes. Respective unit cell are represented by solid, pale black lines. Colour code, C: brown; O: red; H: pink-white; Pt: grey.","id":"validation/atomic-layer-deposition/simulation-usecase/13/fig2","sample_id":"atomic-layer-deposition/simulation-usecase/13/fig2","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Top and side views of pristine graphene, showing the honeycomb lattice structure with all carbon atoms in sp² hybridization. Unit cells are indicated, and atom types are color-coded.\"},{\"panel_id\":\"b\",\"text\":\"Top and side views of graphene with a monovacancy defect, illustrating the missing carbon atom and the resulting local reconstruction in the lattice.\"},{\"panel_id\":\"c\",\"text\":\"Top and side views of graphene with a 585 divacancy defect, showing two adjacent missing carbon atoms and the formation of a 5–8–5 ring configuration.\"},{\"panel_id\":\"d\",\"text\":\"Top and side views of graphene containing a 558-grain boundary (GB), highlighting the periodic arrangement of 5- and 8-membered rings along the boundary.\"},{\"panel_id\":\"e\",\"text\":\"Top and side views of graphene with an oxygenated grain boundary, showing O atoms bonded at the GB sites and structural modifications due to oxidation.\"},{\"panel_id\":\"f\",\"text\":\"Top and side views of graphene with a hydrogenated grain boundary, showing H atoms terminating dangling bonds at the GB, stabilizing the structure for ALD modeling.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Graphene model | Description |\\n|---|---|\\n| Pristine graphene (PG) | Perfect sp² carbon lattice with no dangling bonds; inactive toward ALD nucleation |\"},{\"panel_id\":\"b\",\"text\":\"| Graphene model | Description |\\n|---|---|\\n| Graphene with monovacancy (MV) | Single missing carbon atom creating dangling bonds and enhanced reactivity |\"},{\"panel_id\":\"c\",\"text\":\"| Graphene model | Description |\\n|---|---|\\n| Graphene with 585 divacancy (DV) | Reconstructed divacancy defect altering local π-conjugation |\"},{\"panel_id\":\"d\",\"text\":\"| Graphene model | Description |\\n|---|---|\\n| Graphene with grain boundary (GB, 558-type) | Line defect based on STM-derived 558-type grain boundary structure |\"},{\"panel_id\":\"e\",\"text\":\"| Graphene model | Description |\\n|---|---|\\n| Oxygenated grain boundary (epoxy) | Grain boundary decorated with epoxy oxygen groups |\"},{\"panel_id\":\"f\",\"text\":\"| Graphene model | Description |\\n|---|---|\\n| Oxygenated grain boundary (hydroxyl) / hydrogenated GB | Grain boundary functionalized with hydroxyl or hydrogen species, modifying ALD activity |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. Pristine graphene without defects does not provide active sites for Pt ALD nucleation due to the absence of dangling bonds.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 558-type grain boundary.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The structural models illustrate how pristine graphene lacks active sites for ALD due to its intact sp² network, while defects such as vacancies and grain boundaries introduce dangling bonds and modified electronic structures. These features enhance precursor adsorption and chemisorption, enabling localized Pt nucleation. By comparing different defect types and chemical terminations, the models help explain why Pt deposition occurs selectively at defective regions, guiding strategies for controlled, area-selective metal growth on graphene.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Pristine graphene: Perfect sp² lattice with no dangling bonds, low ALD reactivity, Monovacancy graphene: Missing carbon atom creates dangling bonds and high local reactivity, 585 divacancy graphene: Reconstructed defect that disrupts π-conjugation, 558 grain boundary: Line defect with enhanced adsorption affinity, Oxygenated grain boundary (epoxy): Oxygen functionalization increases chemical activity, Hydrogenated grain boundary: Surface termination alters adsorption behavior\"}]}]","bbox":[{"panel_id":"a","x":5,"y":1,"width":561,"height":390},{"panel_id":"b","x":560,"y":1,"width":543,"height":386},{"panel_id":"c","x":9,"y":379,"width":548,"height":398},{"panel_id":"d","x":554,"y":379,"width":545,"height":398},{"panel_id":"e","x":6,"y":768,"width":557,"height":428},{"panel_id":"f","x":563,"y":773,"width":531,"height":428}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/Bora Karasulu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1108,"height":1206,"image_format":"jpeg","image_sha256":"422a58bd76d860052d4771afe73f393c8cf1b9166e6b73112d8ecec94c976d3b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_13_fig3.jpg","caption":"Fig.3 Various (a-c) $\\mathrm{MeCpPtMe_3}$ and (d) $\\mathrm{Pt(acac)_2}$ species chemisorbed on pristine graphene [and the associated chemisorption energies] as predicted at the PBE-D3 level of theory. See Table 1 for the pathways yielding these species. Colour code, C: brown; O: red; H: pink-white; Pt: grey. Me stands for a methyl $(-CH_3)$ group.","id":"validation/atomic-layer-deposition/simulation-usecase/13/fig3","sample_id":"atomic-layer-deposition/simulation-usecase/13/fig3","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Predicted minimum-energy structure of a MeCpPtMe₃-derived species chemisorbed on pristine graphene, showing non-covalent interactions with Pt remaining above the surface. Chemisorption energy calculated at the PBE-D3 level.\"},{\"panel_id\":\"b\",\"text\":\"Predicted minimum-energy structure of a MeCpPtMe₃-derived species chemisorbed on pristine graphene, showing covalent bonding of Pt to two neighboring carbon atoms, highlighting stronger species-dependent binding behavior. Chemisorption energy calculated at the PBE-D3 level.\"},{\"panel_id\":\"c\",\"text\":\"Predicted minimum-energy structure of another MeCpPtMe₃-derived species on pristine graphene, exhibiting non-covalent interactions with Pt located above the surface. Chemisorption energy calculated at the PBE-D3 level.\"},{\"panel_id\":\"d\",\"text\":\"Predicted minimum-energy structure of Pt(acac)₂ chemisorbed on pristine graphene, showing non-covalent interactions with Pt remaining above the graphene surface. Chemisorption energy calculated at the PBE-D3 level.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Chemisorbed species | Binding type | Graphene interaction distance (Å) |\\n|---|---|---|\\n| MeCpPtMe₂ | Non-covalent | 3.9–4.1 |\"},{\"panel_id\":\"b\",\"text\":\"| Chemisorbed species | Binding type | Graphene interaction distance (Å) |\\n|---|---|---|\\n| MeCpPtMe | Covalent | 2.28–2.44 |\"},{\"panel_id\":\"c\",\"text\":\"| Chemisorbed species | Binding type | Graphene interaction distance (Å) |\\n|---|---|---|\\n| MeCpPtCH₃CH₂ | Non-covalent | 3.9–4.1 |\"},{\"panel_id\":\"d\",\"text\":\"| Chemisorbed species | Binding type | Graphene interaction distance (Å) |\\n|---|---|---|\\n| Pt(acac)₂ | Not explicitly detailed | — |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Removing ligands exposes d-orbital electrons on Pt, enabling covalent bonding to graphene in certain species, as seen in MeCpPtMe.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"MeCpPtMe (panel b) exhibits covalent bonding to two neighboring carbon atoms, whereas MeCpPtMe₂ (panel a) and MeCpPtCH₃CH₂ (panel c) remain non-covalently bound at larger distances (~3.9–4.1 Å).\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding the binding behavior of Pt species on graphene informs which precursors can effectively deposit Pt. Species that covalently bond, such as MeCpPtMe, are more likely to act as nucleation sites for controlled Pt deposition, whereas non-covalently bound species remain mobile and may not contribute to film growth. Insights into ligand effects, orbital availability, and steric hindrance help optimize precursor selection and ALD conditions for uniform and area-selective Pt deposition on graphene surfaces.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Availability of d-orbital electrons on Pt, Removal of ligands from the Pt precursor, Saturation of graphene valence orbitals, Steric effects of methyl or larger substituents, Nature of the Pt precursor (MeCpPtMe₃ vs Pt(acac)₂)\"}]}]","bbox":[{"panel_id":"a","x":7,"y":9,"width":318,"height":150},{"panel_id":"b","x":328,"y":8,"width":326,"height":153},{"panel_id":"c","x":8,"y":164,"width":320,"height":152},{"panel_id":"d","x":328,"y":163,"width":326,"height":154}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/Bora Karasulu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":656,"height":317,"image_format":"jpeg","image_sha256":"cc39fbe6629e30b511055251d9ca68fd9b739d5b38b1b378fa76d6d52c3c9a97","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_13_fig_5.jpg","caption":"Fig. 5 Ball-and-stick representation of the lowest-energy chemisorbed $\\mathrm{MeCpPtMe}_3$ species on various graphene surfaces. Relative energies with respect to the separated species are given in brackets. Colour code, C: brown; O: red; H: pink-white; Pt: grey.","id":"validation/atomic-layer-deposition/simulation-usecase/13/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/13/fig_5","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Ball-and-stick model of MeCpPtMe₃ chemisorbed on pristine graphene, showing adsorption geometry and minimal basal-plane distortion. Relative energy with respect to separated species is indicated.\"},{\"panel_id\":\"b\",\"text\":\"Ball-and-stick model of MeCpPtMe₃ chemisorbed on graphene with a 585 divacancy defect, showing local structural distortion and altered adsorption geometry.\"},{\"panel_id\":\"c\",\"text\":\"Ball-and-stick model of MeCpPtMe₃ chemisorbed on graphene with a bare grain boundary, illustrating adsorption-induced buckling along the boundary region.\"},{\"panel_id\":\"d\",\"text\":\"Ball-and-stick model of MeCpPtMe₃ chemisorbed on epoxyated graphene, highlighting adsorption at oxygen-functionalized sites and local basal-plane distortion.\"},{\"panel_id\":\"e\",\"text\":\"Ball-and-stick model of MeCpPtMe₃ chemisorbed on hydroxylated graphene, showing adsorption at hydroxyl-functionalized sites with induced structural buckling.\"},{\"panel_id\":\"f\",\"text\":\"Ball-and-stick model of MeCpPtMe₃ chemisorbed on hydrogenated graphene grain boundaries, illustrating adsorption geometry and local surface distortion, with relative energies indicated.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Surface type | Binding site / Feature |\\n|---|---|\\n| Pristine graphene | Basal plane |\"},{\"panel_id\":\"b\",\"text\":\"| Surface type | Binding site / Feature |\\n|---|---|\\n| Graphene MV | Defective site |\"},{\"panel_id\":\"c\",\"text\":\"| Surface type | Binding site / Feature |\\n|---|---|\\n| Graphene DV 585 | Divacancy site |\"},{\"panel_id\":\"d\",\"text\":\"| Surface type | Binding site / Feature |\\n|---|---|\\n| GB | Defect line |\"},{\"panel_id\":\"e\",\"text\":\"| Surface type | Binding site / Feature |\\n|---|---|\\n| GB – oxygenated | Epoxy or hydroxyl site |\"},{\"panel_id\":\"f\",\"text\":\"| Surface type | Binding site / Feature |\\n|---|---|\\n| GB – hydrogenated | Hydrogenated site |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Oxygenation or hydrogenation of grain boundaries causes buckling in the graphene basal plane, altering the chemisorption geometry of MeCpPtMe₃.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Functionalized grain boundaries (oxygenated or hydrogenated GBs) show the most pronounced buckling due to sp³ hybridization of carbon atoms.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The variation in adsorption geometries and the structural distortions caused by defects or functionalization indicate that Pt ALD will be highly surface-sensitive. Pristine graphene allows limited binding, while defective or functionalized surfaces promote stronger chemisorption. This suggests that controlled defect engineering or surface functionalization could be used to optimize Pt nucleation and growth in ALD processes, enhancing coverage and uniformity on graphene-based substrates.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Buckling of the basal plane, Formation of folds or distortions at line defects, Local rehybridization of carbon bonds to sp³ at functionalized sites, Variation in adsorption geometry depending on surface composition\"}]}]","bbox":[{"panel_id":"a","x":4,"y":6,"width":315,"height":145},{"panel_id":"b","x":329,"y":4,"width":326,"height":130},{"panel_id":"c","x":3,"y":141,"width":336,"height":148},{"panel_id":"d","x":341,"y":135,"width":302,"height":151},{"panel_id":"e","x":341,"y":135,"width":302,"height":151},{"panel_id":"f","x":310,"y":284,"width":345,"height":155}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/Bora Karasulu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":653,"height":439,"image_format":"jpeg","image_sha256":"3adccecb9ede8ee3ceb30fa5fc2af2c9c5fca89bed1370f225272b385f3344e8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_13_fig_6.jpg","caption":"Fig. 6 Ball-and-stick representation of the models (supercells) used for simulating graphene oxide in the current DFT calculations. Colour code, C: brown; O: red; H: pink-white; Pt: grey.","id":"validation/atomic-layer-deposition/simulation-usecase/13/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/13/fig_6","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"},{"panel_id":"h","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Ball-and-stick model of graphene oxide (GO) supercell with an ordered distribution of epoxy groups on one side, showing slight basal-plane buckling.\"},{\"panel_id\":\"b\",\"text\":\"Ball-and-stick model of GO with ordered hydroxyl groups on one side, illustrating structural distortion due to hydrogen bonding.\"},{\"panel_id\":\"c\",\"text\":\"Ball-and-stick model of GO with mixed epoxy and hydroxyl groups on one side, showing combined effects on planarity and surface geometry.\"},{\"panel_id\":\"d\",\"text\":\"Ball-and-stick model of GO with epoxy groups on both sides of the sheet, highlighting increased buckling compared to single-side functionalization.\"},{\"panel_id\":\"e\",\"text\":\"Ball-and-stick model of GO with hydroxyl groups on both sides, showing enhanced basal-plane distortion due to hydrogen bonding interactions.\"},{\"panel_id\":\"f\",\"text\":\"Ball-and-stick model of GO with mixed epoxy and hydroxyl groups on both sides, illustrating complex buckling patterns and local structural perturbations.\"},{\"panel_id\":\"g\",\"text\":\"Ball-and-stick model of epoxy-doped GO used for investigating oxygen doping effects on ALD reactivity, showing planar distortion at doped sites.\"},{\"panel_id\":\"h\",\"text\":\"Ball-and-stick model of another epoxy-doped GO variant, highlighting local structural modifications and surface buckling relevant for ALD chemistry.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Functionalization | Surface Side | Notes |\\n|---|---|---|\\n| Epoxy | One side | Ordered, planar GO layer |\"},{\"panel_id\":\"b\",\"text\":\"| Functionalization | Surface Side | Notes |\\n|---|---|---|\\n| Hydroxyl | One side | Ordered, planar GO layer |\"},{\"panel_id\":\"c\",\"text\":\"| Functionalization | Surface Side | Notes |\\n|---|---|---|\\n| Epoxy + Hydroxyl mixture | One side | Ordered, planar GO layer |\"},{\"panel_id\":\"d\",\"text\":\"| Functionalization | Surface Side | Notes |\\n|---|---|---|\\n| Epoxy | Both sides | Ordered, planar GO layer |\"},{\"panel_id\":\"e\",\"text\":\"| Functionalization | Surface Side | Notes |\\n|---|---|---|\\n| Hydroxyl | Both sides | Ordered, planar GO layer |\"},{\"panel_id\":\"f\",\"text\":\"| Functionalization | Surface Side | Notes |\\n|---|---|---|\\n| Epoxy + Hydroxyl mixture | Both sides | Slight buckling due to random distribution |\"},{\"panel_id\":\"g\",\"text\":\"| Functionalization | Surface Side | Notes |\\n|---|---|---|\\n| Epoxy-doped | One side | Oxygen doping, low likelihood, tested for ALD reactivity |\"},{\"panel_id\":\"h\",\"text\":\"| Functionalization | Surface Side | Notes |\\n|---|---|---|\\n| Epoxy-doped | Both sides | Oxygen doping, low likelihood, tested for ALD reactivity |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Double-sided functionalizations, especially with mixed distributions, tend to increase buckling compared to single-sided, ordered functionalizations.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ordered distributions of epoxy and hydroxyl groups preserve planarity, while random or mixed distributions increase sp3 carbon content and cause buckling.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Functionalization affects both planarity and uniformity of the GO surface, which are critical for atomic layer deposition (ALD) applications. Ordered single- or double-sided functionalizations maintain a mostly planar layer, allowing for uniform seeding and controlled film growth. In contrast, random distributions or heavy buckling can hinder film uniformity and thickness control, reducing the effectiveness of GO as a seeding layer. Epoxy-doped models are additionally useful for studying enhanced reactivity in ALD, although their formation is less likely experimentally.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Type of functional group (epoxy or hydroxyl), Side-specific functionalization (one or both sides), Distribution pattern (ordered vs. random), Density of functional groups, Epoxy-doped versus hydroxyl-doped modifications\"}]}]","bbox":[{"panel_id":"a","x":9,"y":7,"width":529,"height":372},{"panel_id":"b","x":556,"y":13,"width":543,"height":360},{"panel_id":"c","x":5,"y":382,"width":543,"height":374},{"panel_id":"d","x":550,"y":376,"width":549,"height":387},{"panel_id":"e","x":13,"y":759,"width":544,"height":457},{"panel_id":"f","x":557,"y":759,"width":537,"height":433},{"panel_id":"g","x":6,"y":1214,"width":546,"height":362},{"panel_id":"h","x":557,"y":1197,"width":537,"height":384}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/Bora Karasulu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1102,"height":1589,"image_format":"jpeg","image_sha256":"c09b9d4f4a10404ef35aa202097051b804921f5e3efb2246ca028e77cb78a828","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_13_fig_7.jpg","caption":"Fig. 7 Ball-and-stick representation of the lowest-energy (left) physi-sorbed and (right) chemisorbed species of (top) $\\mathrm{MeCpPtMe}_3$ and (bottom) $\\mathsf{Pt(acac)}_2$ on selected graphene oxide models investigated in the current DFT calculations. Relative energies with respect to the separated species are given in brackets. Colour code, C: brown; O: red; H: pink-white; Pt: grey. Hydrogen bonds are represented by black dashed lines.","id":"validation/atomic-layer-deposition/simulation-usecase/13/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/13/fig_7","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Optimized structures of MeCpPtMe₃ and Pt(acac)₂ on epoxydated graphene oxide (single-sided), showing both physisorbed (left) and chemisorbed (right) states. Relative energies with respect to separated species are indicated, and hydrogen bonding interactions are illustrated.\"},{\"panel_id\":\"b\",\"text\":\"Optimized structures of MeCpPtMe₃ and Pt(acac)₂ on hydroxylated graphene oxide (single-sided), showing physisorbed and chemisorbed species with corresponding relative energies. Hydrogen bonding interactions are highlighted.\"},{\"panel_id\":\"c\",\"text\":\"Optimized structures of MeCpPtMe₃ and Pt(acac)₂ on mixed graphene oxide with random distribution of epoxy and hydroxyl groups, showing physisorbed and chemisorbed species. Relative energies and hydrogen bonding interactions are indicated, highlighting stability differences compared to single-functionalized surfaces.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Species | ΔEp [eV] | ΔEc [eV] | ΔEr [eV] |\\n|---|---|---|---|\\n| Pt(acac)₂ | -1.96 | -0.48 | 1.48 |\"},{\"panel_id\":\"b\",\"text\":\"| Species | ΔEp [eV] | ΔEc [eV] | ΔEr [eV] |\\n|---|---|---|---|\\n| Pt(acac)₂ | - | -4.38 | - |\"},{\"panel_id\":\"c\",\"text\":\"| Species | ΔEp [eV] | ΔEc [eV] | ΔEr [eV] |\\n|---|---|---|---|\\n| Pt(acac)₂ | - | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. DFT calculations indicate that chemisorption proceeds through stable intermediate species, including the abstraction of hydroxyl groups, which affects the overall binding process.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Chemisorbed Pt(acac)2 on hydroxylated GO is more stable (ΔEc = −4.38 eV) compared to epoxydated GO (ΔEc = −0.48 eV).\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Pt(acac)2 chemisorption is hindered on all types of GO due to high endothermicity, large activation barriers, and formation of very stable intermediate species where Pt does not remain bonded to the surface. On epoxydated surfaces, the chemisorbed species is energetically unfavorable, and on hydroxylated surfaces, intermediates stabilize Pt away from the surface. This prevents efficient nucleation and deposition, limiting its practical use in ALD.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Type of functional groups (epoxy vs hydroxyl), Distribution of functional groups (single-sided vs mixed), Availability of hydrogen atoms for by-product formation, Presence of intermediate charge-separated subunits, Hydrogen bonding interactions with Pt species\"}]}]","bbox":[{"panel_id":"a","x":7,"y":7,"width":625,"height":511},{"panel_id":"b","x":2,"y":527,"width":637,"height":423},{"panel_id":"c","x":5,"y":952,"width":634,"height":487}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/Bora Karasulu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":639,"height":1442,"image_format":"jpeg","image_sha256":"883e4b26d74c0ce624282370a7afcd35e6693cbd7bc2e617c50ea154f62ac2d9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_24_fig_1.jpg","caption":"Fig. 1. The (a) $\\mathrm{Si(OH)_3 - OH}$ b $\\mathrm{SiH_3OS(OH)_2 - OH}$ c $\\mathrm{(SiH_3O)_3Si - OH}$ d $\\mathrm{Si(OH)_3OZrCl_3}$ e $\\mathrm{SiH_3OS(OH)_2OZrCl_3}$ and (f) $\\mathrm{(SiH_3O)_3SiOZrCl_3}$ clusters used in this study.","id":"validation/atomic-layer-deposition/simulation-usecase/24/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/24/fig_1","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image displays the molecular structure, of Si(OH)_3 - OH.\"},{\"panel_id\":\"b\",\"text\":\"The image displays the molecular structure, of SiH_3OS(OH)_2 - OH.\"},{\"panel_id\":\"c\",\"text\":\"The image displays the molecular structure, of (SiH_3O)_3Si - OH.\"},{\"panel_id\":\"d\",\"text\":\"The image displays the molecular structure, of Si(OH)_3OZrCl_3.\"},{\"panel_id\":\"e\",\"text\":\"The image displays the molecular structure, of SiH_3OS(OH)_2OZrCl_3.\"},{\"panel_id\":\"f\",\"text\":\"The image displays the molecular structure, of (SiH_3O)_3SiOZrCl_3.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There is both a silicon atom and a zirconium atom in the precursor, so both SiO2 and ZrO2. In this case ZrO2 is more likely.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Red\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ozone, oxygen plasma\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Silicon atoms have four valence electrons, this can be deduced from the fact that the silicon atoms form four single electron bonds with other atoms.\"}]}]","bbox":[{"panel_id":"a","x":12,"y":19,"width":172,"height":179},{"panel_id":"b","x":231,"y":0,"width":197,"height":202},{"panel_id":"c","x":463,"y":22,"width":304,"height":176},{"panel_id":"d","x":10,"y":358,"width":167,"height":221},{"panel_id":"e","x":222,"y":347,"width":188,"height":221},{"panel_id":"f","x":539,"y":314,"width":181,"height":245}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/Joseph H. Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":767,"height":631,"image_format":"jpeg","image_sha256":"e6789d0c0843a6b933c031495f9e2fa5dfd3b5cf4d313efa8fece9b45f4aabc3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_24_fig_5.jpg","caption":"Fig. 5. Illustration of parameters shown in Table 1: (A) $\\mathrm{Zr - Cl}$ bond of the adsorbed water complex, (B) the distance between $\\mathrm{HCl(a)}$ and the O atom of the $\\mathrm{Zr - OH^{*}}$ site, and (C) the minimum distance between $\\mathrm{HCl(a)}$ and $\\mathrm{H}$ atoms used to terminate the $\\mathrm{Si - O}$ bond.","id":"validation/atomic-layer-deposition/simulation-usecase/24/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/24/fig_5","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image depicts a molecular structure diagram illustrating the arrangement of atoms in a molecule.\"},{\"panel_id\":\"b\",\"text\":\"The image depicts a molecular structure diagram illustrating the arrangement of atoms in a molecule, where HCl is desorbed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The interaction of HCl with the newly formed OH bond as well as the OH bond from the SiO2 substrate.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This is usually not done as this would require way more computing power as all chemical bonds in a substrate can have an influence on the reacting substrate.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reaction is similar, but it is likely that it will be more complex as there are also backbonds of the substrate with reacting surface groups.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"pink.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":253,"height":317},{"panel_id":"b","x":283,"y":24,"width":306,"height":293}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/Joseph H. Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":589,"height":317,"image_format":"jpeg","image_sha256":"f1404f1ca1f2ea1d9e26c994453fc624e09326821923622d08580503dfb138ec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_39_ab829c08613466b1bd1b39ce38d7de3fe4b532c08a4a38a66a80ce13f12f4ee0.jpg","caption":"Fig.10The inil, tion and final stes in the ction btwe the MRA and two water molules. The second water molule stalizes the transition and final states lower the activation energy by $0.24\\in V$","id":"validation/atomic-layer-deposition/simulation-usecase/39/ab829c08613466b1bd1b39ce38d7de3fe4b532c08a4a38a66a80ce13f12f4ee0","sample_id":"atomic-layer-deposition/simulation-usecase/39/ab829c08613466b1bd1b39ce38d7de3fe4b532c08a4a38a66a80ce13f12f4ee0","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":7,"width":382,"height":255},{"panel_id":"b","x":445,"y":3,"width":394,"height":257},{"panel_id":"c","x":892,"y":70,"width":373,"height":189}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/ab829c08613466b1bd1b39ce38d7de3fe4b532c08a4a38a66a80ce13f12f4ee0.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/ab829c08613466b1bd1b39ce38d7de3fe4b532c08a4a38a66a80ce13f12f4ee0.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1267,"height":261,"image_format":"jpeg","image_sha256":"b4540161e1c3724d8f000e77232ddddbbbdb3a7191cfa8e1322425c951c8e297","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_39_ad9b3cb6174a00ce692e05e28ca5e82c5e77c079265a39f78a3f8949736e3557.jpg","caption":"Fig.4h t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t h","id":"validation/atomic-layer-deposition/simulation-usecase/39/ad9b3cb6174a00ce692e05e28ca5e82c5e77c079265a39f78a3f8949736e3557","sample_id":"atomic-layer-deposition/simulation-usecase/39/ad9b3cb6174a00ce692e05e28ca5e82c5e77c079265a39f78a3f8949736e3557","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":66,"y":11,"width":458,"height":374},{"panel_id":"b","x":572,"y":12,"width":464,"height":373},{"panel_id":"c","x":15,"y":420,"width":530,"height":295},{"panel_id":"d","x":555,"y":420,"width":530,"height":294}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/ad9b3cb6174a00ce692e05e28ca5e82c5e77c079265a39f78a3f8949736e3557.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/ad9b3cb6174a00ce692e05e28ca5e82c5e77c079265a39f78a3f8949736e3557.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1088,"height":719,"image_format":"jpeg","image_sha256":"eceb79522a77b8ddf723262216568682f2fe8f6a85dde1d0f6d619c0c5bfe7a0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_39_fig_1.jpg","caption":"Fig. 1 Side-view of the hydroxylated surfaces formed from dissociatively adsorbed water. Two kinds of hydroxyl groups are present, the higher group formed from the water molecule and the lower one formed with the dissociated hydrogen and surface oxygen. A monolayer coverage is achieved when four water molecules adsorb onto a $2\\times 2$ cell which corresponds to a surface concentration of $16\\mu \\mathrm{mol}\\mathrm{m}^{-2}$ . Only three molecules are visible from this view due to overlap.","id":"validation/atomic-layer-deposition/simulation-usecase/39/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/39/fig_1","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":622,"height":286}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":622,"height":286,"image_format":"jpeg","image_sha256":"2629895235c1b47c31633c4d33c18124c32522b2a65bf2583fa97b0c12d29a94","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_39_fig_2.jpg","caption":"Fig. 2 Side-view of the gibbsite-like surface. Stoichiometric gibbsite-layer is formed when the top aluminium atoms are replaced with three hydrogen atoms. Gibbsite-like surface gives two vertical and one horizontal hydroxyl groups per unit cell. Gibbsite-like surface corresponds to a hydroxyl surface concentration of $25\\mu \\mathrm{mol}\\mathrm{m}^{-2}$ .","id":"validation/atomic-layer-deposition/simulation-usecase/39/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/39/fig_2","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":622,"height":250}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":622,"height":250,"image_format":"jpeg","image_sha256":"1d314ff408467e5070b6f76c254704420e99be7fd8b13288b982ff6db85a0525","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_39_fig_3.jpg","caption":"Fig. 3 Adsorbed TMA on the hydroxylated surface (left) and on the gibbsite surface (right). Brown, red, black and white spheres represent aluminium, oxygen, carbon and hydrogen, respectively. The TMA is more distorted from its planar structure on the gibbsite surface than on the hydroxylated surface. However, the adsorption energy on the gibbsite-surface is $0.5\\text{eV}$ more exothermic than on the hydroxylated surface. There is no differences in the adsorption bond lengths between the two surface models.","id":"validation/atomic-layer-deposition/simulation-usecase/39/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/39/fig_3","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":2,"width":570,"height":448},{"panel_id":"b","x":575,"y":4,"width":629,"height":444}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1205,"height":453,"image_format":"jpeg","image_sha256":"fbf4445d29a7a666c20b133bb1bb6109177d554e02ec26b0ede7aadcb93717a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_39_fig_5.jpg","caption":"Fig. 5 An example of a bridged structure. The bridged structure stabilizes the adsorbed structure and increases the adsorption energy of the TMA.","id":"validation/atomic-layer-deposition/simulation-usecase/39/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/39/fig_5","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":558,"height":403}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":558,"height":403,"image_format":"jpeg","image_sha256":"2ede5f0e0a334ced5a8de18b1173716feb322a2ac28d9de4f5c71773a854a866","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_39_fig_6.jpg","caption":"Fig. 6 The initial, transition and final states in the second ligand-exchange reaction. The initially linear Al-O-Al bond needs to bend from $180^{\\circ}$ angle down to $140^{\\circ}$ in order to reach the transition state. Notice that a proton in transferred to the adsorbent oxygen after the transition state.","id":"validation/atomic-layer-deposition/simulation-usecase/39/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/39/fig_6","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":3,"width":449,"height":319},{"panel_id":"b","x":451,"y":3,"width":462,"height":319},{"panel_id":"c","x":917,"y":1,"width":447,"height":319}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1367,"height":325,"image_format":"jpeg","image_sha256":"4cce2494c557f9ad1d4c6d54413e8b0aa61e9d0e58cb67324ff68ddded5939d0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_39_fig_7.jpg","caption":"Fig. 7 The initial, transition and final states for the proposed third ligand-exchange reaction. The final dissociation of the TMA leads to densification of the surface which is not observed in the other reaction pathways. However, the ligand-exchange reactions are predicted to stop at the second dissociation due to the high barrier for the third reaction.","id":"validation/atomic-layer-deposition/simulation-usecase/39/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/39/fig_7","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":1,"width":454,"height":275},{"panel_id":"b","x":459,"y":1,"width":451,"height":275},{"panel_id":"c","x":914,"y":0,"width":461,"height":277}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1375,"height":278,"image_format":"jpeg","image_sha256":"c387a3ccfd88ac8ea4c7b74bc3a41a7435599a4439a03faec1f641261badb0ac","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_39_fig_8.jpg","caption":"Fig. 8 The initial reaction for between DMA and water. From left to right, the initial, transition and final stage of the reaction. Single DMA in a $2 \\times 2$ unit self corresponds to a methyl-surface concentration of $4 \\mu \\mathrm{mol} \\mathrm{m}^{-2}$ .","id":"validation/atomic-layer-deposition/simulation-usecase/39/fig_8","sample_id":"atomic-layer-deposition/simulation-usecase/39/fig_8","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":3,"width":431,"height":345},{"panel_id":"b","x":438,"y":1,"width":438,"height":347},{"panel_id":"c","x":882,"y":0,"width":438,"height":350}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1322,"height":350,"image_format":"jpeg","image_sha256":"69cb635a7f7fe6322a58b2762b34d6a88ded6f346c0d87a65b17131d9b838c28","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_39_fig_9.jpg","caption":"Fig. 9 The MMA is not able to react with a water molecule. However, it is possible for a water molecule to break down the inert and closed structure of the MMA. Barrier for this adsorption process is $0.26 \\mathrm{eV}$ .","id":"validation/atomic-layer-deposition/simulation-usecase/39/fig_9","sample_id":"atomic-layer-deposition/simulation-usecase/39/fig_9","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":882,"y":0,"width":438,"height":350},{"panel_id":"b","x":456,"y":2,"width":448,"height":247},{"panel_id":"c","x":907,"y":0,"width":458,"height":247}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/images/fig_9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/39/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":1367,"height":250,"image_format":"jpeg","image_sha256":"86e67bb4c66c85cd04c9ffd0bc997eea9b64d85a6ddef682713a3731057a3fd6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_50_fig1.jpg","caption":"Fig.1 Atomic configurations for the (a) hexagonal $\\beta -\\mathrm{Si}_3\\mathrm{N}_4$ unit cell, (b) bare $\\beta -\\mathrm{Si}_3\\mathrm{N}_4(0001) - (1\\times 1)$ surface; and (c) $\\mathrm{H / NH_2}$ -terminated N-rich surface containing three primary $(\\mathbb{N}^{1^{\\circ}})$ , three secondary $(\\mathbb{N}^{2^{\\circ}})$ and one tertiary $(\\mathbb{N}^{3^{\\circ}})$ amine groups. Yellow, blue, and white balls represent Si, N, and H atoms, respectively.","id":"validation/atomic-layer-deposition/simulation-usecase/50/fig1","sample_id":"atomic-layer-deposition/simulation-usecase/50/fig1","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure shows the hexagonal β-Si3N4 unit cell, illustrating the atomic arrangement of Si and N atoms along the crystallographic a and c directions.\"},{\"panel_id\":\"b\",\"text\":\"The subfigure presents the bare β-Si3N4 (0001)-(1×1) surface, highlighting the surface atomic network and exposed nitrogen coordination.\"},{\"panel_id\":\"c\",\"text\":\"The subfigure shows an H/NH2-terminated N-rich β-Si3N4 (0001) surface, identifying primary (N1°), secondary (N2°), and tertiary (N3°) amine groups bonded to surface nitrogen atoms.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The unit cell shows a hexagonal crystal structure in which silicon and nitrogen atoms form a covalently bonded network. The ordered arrangement along the a and c lattice directions reflects the long-range periodicity that defines the bulk β-Si3N4 phase.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Primary (N1°), secondary (N2°), and tertiary (N3°) amine groups.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The (0001)-(1×1) surface.\"}]}]","bbox":[{"panel_id":"a","x":41,"y":6,"width":374,"height":132},{"panel_id":"b","x":6,"y":141,"width":319,"height":225},{"panel_id":"c","x":320,"y":136,"width":339,"height":234}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/Gregory Hartmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":658,"height":369,"image_format":"jpeg","image_sha256":"d1805a6f91ba9e14873ea9a0d252bfdc4d043526ded09bd7d12347446765a85c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_50_fig7.jpg","caption":"Fig.7 Available N atoms for the nucleophilic attack of $-\\mathrm{SiH}_2\\mathrm{Cl}$ to form $>\\mathrm{SiH}_2$ , where the blue ball indicates the N atom $(\\mathrm{N}^{\\mathrm{R}})$ including $-\\mathrm{SiH}_2\\mathrm{Cl}$ . Red and orange balls indicate $\\mathrm{N}^{1^{\\circ}}$ and $\\mathrm{N}^{2^{\\circ}}$ , respectively. The inset details the atomic configuration of $>\\mathrm{SiH}_2$ .","id":"validation/atomic-layer-deposition/simulation-usecase/50/fig7","sample_id":"atomic-layer-deposition/simulation-usecase/50/fig7","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure shows the surface nitrogen network highlighting available N atoms for nucleophilic attack by −SiH2Cl. Different nitrogen environments (NR, N1°, and N2°) are marked to distinguish their local coordination and reactivity.\"},{\"panel_id\":\"b\",\"text\":\"The inset shows a close-up atomic configuration of the >SiH2 species after bond formation, emphasizing the local N–Si–N bonding geometry.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Subfigure (a) labels different nitrogen environments on the surface, distinguishing reactive NR sites from N1° and N2° configurations. This labeling highlights which nitrogen atoms are geometrically and chemically accessible for nucleophilic attack by −SiH2Cl.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"NR.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The N–Si–N bond angle.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":578,"height":372},{"panel_id":"b","x":395,"y":8,"width":180,"height":141}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/Gregory Hartmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":578,"height":372,"image_format":"jpeg","image_sha256":"b42708fa09c5b903e498e738961328bfa7a7a556af7827508a6a7fc04fceb441","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_50_fig_4.jpg","caption":"Fig. 4 Side (left panels) and top (right panels) views for molecularly adsorbed DCS at the lowest energy site [(a)] and an alternative site above the $\\mathbb{N}^{1^{\\circ}}$ groups [(b)]. Green, yellow, and white balls in DCS represent Cl, Si, and H atoms, respectively.","id":"validation/atomic-layer-deposition/simulation-usecase/50/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/50/fig_4","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure shows side and top views of DCS adsorbed at the lowest-energy site on the surface, with the Si center interacting with surface nitrogen atoms. The orientation highlights how the Cl ligands and H atom are arranged relative to nearby N1°, N2°, and N3° surface sites.\"},{\"panel_id\":\"b\",\"text\":\"The subfigure shows side and top views of DCS adsorbed at an alternative site directly above N1° groups. Compared to (a), the adsorption geometry is shifted, changing how the Si–N interaction aligns with the surrounding surface nitrogen network.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In subfigure (a), the DCS molecule is oriented so that the silicon atom directly interacts with surface nitrogen atoms, forming a stable adsorption configuration. The Cl ligands and H atom are positioned away from the surface, which reduces steric crowding and helps stabilize this lowest-energy site.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A Si–N coordination interaction.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"N1° groups.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":5,"y":3,"width":872,"height":322},{"panel_id":"b","x":4,"y":327,"width":872,"height":327}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/Gregory Hartmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":880,"height":656,"image_format":"jpeg","image_sha256":"288b6782bcdb58bb0bfc945817aea8437927a876e9737e2d4f28f747aa536c0a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_50_fig_5.jpg","caption":"Fig. 5 Side (left) and top (right) views of the DCS-amine adduct. Green, yellow, white, and blue balls represent Cl, Si, H, and N atoms, respectively. Wannier centers are also indicated in grey balls.","id":"validation/atomic-layer-deposition/simulation-usecase/50/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/50/fig_5","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure shows a side view of the DCS–amine adduct, highlighting the bonding between the amine nitrogen and the silicon center, along with surrounding Cl and H atoms. The spatial arrangement makes the coordination geometry and nearby Wannier centers visible.\"},{\"panel_id\":\"b\",\"text\":\"The subfigure presents a top view of the same DCS–amine adduct on the surface, showing how the amine group sits relative to the surrounding lattice and neighboring atoms.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The side view shows the amine nitrogen directly coordinated to the silicon atom, forming the DCS–amine adduct. The surrounding Cl and H atoms define the local bonding environment, making it clear how the amine approaches and binds to the silicon site.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Silicon.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A top view.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":3,"y":5,"width":342,"height":250},{"panel_id":"b","x":355,"y":6,"width":300,"height":250}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/Gregory Hartmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":658,"height":256,"image_format":"jpeg","image_sha256":"19a44bef0b850a267160178a89140be98b38069769fdaec08294cc8b23bef5ca","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_50_fig_6.jpg","caption":"Fig. 6 AIMD snapshots of the DCS decomposition reaction producing $\\mathsf{H}^{+}$ and $\\mathsf{Cl}^{-}$ , corresponding to the $(c) \\rightarrow (d)$ reaction in Fig. 2. Red dotted lines indicate the hydrogen bonds associated with $\\mathsf{H}^{+}$ transfer.","id":"validation/atomic-layer-deposition/simulation-usecase/50/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/50/fig_6","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure shows the initial AIMD snapshot (time t) of the DCS molecule interacting with the surface, where hydrogen atoms are positioned close to neighboring nitrogen sites. Red dotted lines highlight hydrogen-bond interactions involved in the early stage of proton transfer.\"},{\"panel_id\":\"b\",\"text\":\"The subfigure shows an intermediate snapshot at t+27 fs, where hydrogen atoms begin to move away from their original positions, indicating the onset of H⁺ transfer during DCS decomposition.\"},{\"panel_id\":\"c\",\"text\":\"The subfigure shows a later snapshot at t+124 fs, where proton transfer to a surface nitrogen has occurred and chloride formation is evident, consistent with DCS decomposition into H⁺ and Cl⁻ as indicated by the AIMD trajectory.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In subfigure (a), the DCS molecule is still largely intact and positioned near the surface, with hydrogen atoms forming short contacts with nearby nitrogen atoms. These interactions, marked by red dotted lines, indicate hydrogen bonding that precedes proton transfer.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"H⁺ and Cl⁻, consistent with DCS decomposition.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The onset of hydrogen atom transfer away from the DCS molecule.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":5,"width":361,"height":224},{"panel_id":"b","x":398,"y":6,"width":379,"height":221},{"panel_id":"c","x":809,"y":5,"width":364,"height":223}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/Gregory Hartmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":1177,"height":231,"image_format":"jpeg","image_sha256":"10bccf2d6bdc1df0f80b8f02b0face41a9471e21427822c671d54aa048534007","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_1.jpg","caption":"Figure 1. Optimized structure of the hydroxylated $\\mathrm{SiO}_2(001)$ surface: a) side view and b) top view.","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_1","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":5,"width":424,"height":158},{"panel_id":"b","x":4,"y":174,"width":424,"height":329}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":431,"height":509,"image_format":"jpeg","image_sha256":"9db35bb3b6c16236f789280b55c58811e8f550cf1003feb55996307705df196b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_10.jpg","caption":"Figure 10. Three different types of surface $-\\mathrm{OH}$ groups of $\\mathrm{O}_2$ type in the proximity of the $-\\mathrm{Si(OH)}_3$ .","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_10","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":313,"height":300}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":313,"height":300,"image_format":"jpeg","image_sha256":"086ccb0b88be1f94af833c3859e865e16a8821f5b691b8e8c05fa0e7c95f4f80","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_11.jpg","caption":"Figure 11. Optimized initial, transition, and final structures for the reaction between $-\\mathrm{Si(OH)}_3$ species and surface $-\\mathrm{OH}$ group: (a) path a, (b) path b, and (c) path c. The green balls represent the migrating H atom.","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_11","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_11","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":3,"width":593,"height":205},{"panel_id":"b","x":6,"y":217,"width":592,"height":185},{"panel_id":"c","x":6,"y":413,"width":592,"height":192}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_11.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":603,"height":606,"image_format":"jpeg","image_sha256":"4caae73a3fe6506c69a446a0ec5be3cae0151ea8a6c88f767957b8ecb2d1e3fe","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_2.jpg","caption":"Figure 2. Optimized structure of DSBAS.","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_2","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":367,"height":428}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":367,"height":428,"image_format":"jpeg","image_sha256":"8d269898c054c41cf2b49e3796d75b1e40ee1fd4b8fa67566f7740a75eb81b53","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_3.jpg","caption":"Figure 3. Optimized initial, transition, and final structures for the dissociative chemisorption of DSBAS on the hydroxylated $\\mathrm{SiO}_2(801)$ surface. The green balls represent the migrating $\\mathrm{H}$ atom.","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_3","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":994,"height":328}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":994,"height":328,"image_format":"jpeg","image_sha256":"8ed0ee20167652f0716e786e5c3ec0da6159cfec25a57409e3c8502b16f2fc0b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_5.jpg","caption":"Figure 5. Three different types of surface $-\\mathrm{OH}$ groups of O2 type in the proximity of the $-\\mathrm{SiH}_3$ .","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_5","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":313,"height":308}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":313,"height":308,"image_format":"jpeg","image_sha256":"5bb57cad5ef49144d34be7922fc42d4aa6f105ff1dad663c6eccabc490a50bdd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_6.jpg","caption":"Figure 6. Optimized initial, transition, and final structures for the reaction between $-\\mathrm{SiH}_3$ species and surface $-\\mathrm{OH}$ group: (a) path a, (b) path b, and (c) path c. The green balls represent the migrating $\\mathrm{H}$ atom.","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_6","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":6,"width":591,"height":199},{"panel_id":"b","x":4,"y":210,"width":589,"height":196},{"panel_id":"c","x":5,"y":413,"width":591,"height":201}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":600,"height":616,"image_format":"jpeg","image_sha256":"25a535149da3931c61ccfdabc2c6e6f54fc7876daae59851c193e0587a4fdd8c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_8.jpg","caption":"Figure 8. Optimized initial, transition, and final structures for the sequential oxidation process of the $-\\mathrm{SiH}_3$ species: (a) step 1, (b) step 2, and (c) step 3.","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_8","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":4,"width":631,"height":194},{"panel_id":"b","x":7,"y":216,"width":629,"height":196},{"panel_id":"c","x":8,"y":424,"width":631,"height":204}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:image_caption"},"width":641,"height":633,"image_format":"jpeg","image_sha256":"af6cc1d16e0d1636f541013fa0cc940cae4deb83486fac1421a85517f56f6943","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig13.jpg","caption":"Fig.13 (a) Physisorption of a Hhfac molecule onto an OH-terminated $\\mathsf{Al}_2\\mathsf{O}_3$ surface where only one O atom is directed towards the surface. From configuration (a) the Hhfac can transition into (b) a monodentate bound configuration with an OH group directed away from the surface.","id":"validation/atomic-layer-etching/experimental-usecase/10/fig13","sample_id":"atomic-layer-etching/experimental-usecase/10/fig13","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":9,"width":302,"height":366},{"panel_id":"b","x":307,"y":1,"width":346,"height":376}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig13.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":658,"height":380,"image_format":"jpeg","image_sha256":"b5678daaccd4a0054cad444c585b855e83764216c378be1660b964d21c0d3bcb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig_2.jpg","caption":"Fig. 2 (a) The general structure of a diketone molecule, where $\\mathsf{R}_1$ and $\\mathsf{R}_2$ can be the same or different terminal groups. The molecule is a keto-enol tautomer; in gas phase enol is the more stable configuration for many diketones.32 (b) Structure of the hexafluoroacetylacetone (Hhfac) molecule used in this work. Hhfac exists nearly exclusively in the enol form, as shown in the figure.32","id":"validation/atomic-layer-etching/experimental-usecase/10/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/10/fig_2","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":45,"y":7,"width":621,"height":296},{"panel_id":"b","x":45,"y":317,"width":498,"height":215}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":667,"height":531,"image_format":"jpeg","image_sha256":"06b973192bd83e9347743385951fbe530968dc0c8b73c4c23a3ffa3f7a95dc5a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_05d40bf8e4185a7d637c9c609c63dc088ef74db80781baadd53a09a35b0b7607.jpg","caption":"","id":"validation/atomic-layer-etching/simulation-usecase/1/05d40bf8e4185a7d637c9c609c63dc088ef74db80781baadd53a09a35b0b7607","sample_id":"atomic-layer-etching/simulation-usecase/1/05d40bf8e4185a7d637c9c609c63dc088ef74db80781baadd53a09a35b0b7607","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"MD snapshot of SiO₂ after 200 impacts of 20 eV CF₃⁺ ions, showing early-stage fluorocarbon layer formation at the surface.\"},{\"panel_id\":\"b\",\"text\":\"MD snapshot after 400 impacts, showing a thicker but still C-poor fluorocarbon passivation layer approaching quasi-steady-state.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The fluorocarbon passivation step of layer-by-layer etching, where low-energy CF₃⁺ ions deposit a nanometer-scale reactive layer on SiO₂.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 20 eV, a larger fraction of CF₃⁺ ions reflect from the surface without reacting compared to CF₂⁺. This occurs because CF₃⁺ has fewer carbon dangling bonds available for bonding, and the accumulating F at the surface terminates available sites. Consequently, the passivation film builds up more slowly with CF₃⁺.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Si (red), O (blue), C (gray), F (light gray).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thinner, and it also contains less carbon.\"}]}]","bbox":[{"panel_id":"b","x":4,"y":552,"width":499,"height":641},{"panel_id":"a","x":8,"y":4,"width":497,"height":555}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/05d40bf8e4185a7d637c9c609c63dc088ef74db80781baadd53a09a35b0b7607.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/05d40bf8e4185a7d637c9c609c63dc088ef74db80781baadd53a09a35b0b7607.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"not_found"},"width":508,"height":1205,"image_format":"jpeg","image_sha256":"6971b1858d4f59f3082a46eff6fd64a751d7b5d867538eabee961854820f9c89","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_531fd5bc67740324af3ef5f33b6ab08029b469d0484592d03ac76a6ba17c0830.jpg","caption":"","id":"validation/atomic-layer-etching/simulation-usecase/1/531fd5bc67740324af3ef5f33b6ab08029b469d0484592d03ac76a6ba17c0830","sample_id":"atomic-layer-etching/simulation-usecase/1/531fd5bc67740324af3ef5f33b6ab08029b469d0484592d03ac76a6ba17c0830","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Crystalline α-quartz SiO₂ sample (24.57 × 25.53 × 27.6 ų) used as the initial test structure for MD simulations.\"},{\"panel_id\":\"b\",\"text\":\"SiO₂ sample after 100 impacts of 20 eV CF₂⁺ ions, showing initial fluorocarbon layer formation at the surface.\"},{\"panel_id\":\"c\",\"text\":\"SiO₂ sample after 200 impacts, with a thicker fluorocarbon passivation layer (~8 Å) and amorphization of the top ~10 Å of the oxide.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The height within the sample, measured from the bottom of the structure, used for plotting concentration profiles.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Between 100 and 200 impacts, the fluorocarbon passivation layer grows thicker and denser. The surface becomes more disordered, and the amorphized region of the underlying SiO₂ expands. By 200 impacts, the system is approaching quasi-steady-state conditions.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It serves as a fixed boundary condition to simulate a semi-infinite substrate during the MD simulation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Fluorine-rich (F/C ≫ 1), because carbon is sputtered more easily than fluorine at energies above 10 eV.\"}]}]","bbox":[{"panel_id":"c","x":2,"y":980,"width":473,"height":610},{"panel_id":"b","x":0,"y":478,"width":476,"height":501},{"panel_id":"a","x":0,"y":2,"width":473,"height":473}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/531fd5bc67740324af3ef5f33b6ab08029b469d0484592d03ac76a6ba17c0830.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/531fd5bc67740324af3ef5f33b6ab08029b469d0484592d03ac76a6ba17c0830.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"not_found"},"width":484,"height":1592,"image_format":"jpeg","image_sha256":"da06b5d6f3ff0b22eede2249cdd8b13433847ca7d0c6ffb5ab21a9c9010e846a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_8.jpg","caption":"FIG. 8. (Color online) Side view of the $\\mathrm{SiO}_2$ sample after bombardment by $\\mathrm{Ar^{+}}$ ions of energies of (a) $20\\mathrm{eV}$ and (b) $40\\mathrm{eV}$ . This sample had initially a fluorocarbon overlayer grown using $20\\mathrm{eV}$ $\\mathrm{CF}_3^+$ ions (400 impacts).","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_8","subset":"molecular-structure-diagram","split":"validation","classification":[{"panel_id":"a","label":"molecular structure diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"SiO₂ sample after 400 Ar⁺ impacts at 20 eV. Some fluorocarbon species remain at the surface and the amorphized region is relatively thin.\"},{\"panel_id\":\"b\",\"text\":\"SiO₂ sample after 400 Ar⁺ impacts at 40 eV. The amorphized region extends deeper into the substrate, and less fluorocarbon remains at the surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The amorphized layer is thicker at 40 eV due to deeper ion penetration.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Si (red), O (blue), C (gray), F (light gray).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"400 impacts of 20 eV CF₃⁺ ions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 40 eV, Ar⁺ ions penetrate deeper into the substrate, creating a thicker amorphized region that can degrade crystalline quality. Additionally, at 50 eV and above, etching is no longer self-limiting, making precise layer-by-layer control more difficult.\"}]}]","bbox":[{"panel_id":"b","x":3,"y":620,"width":505,"height":709},{"panel_id":"a","x":5,"y":11,"width":505,"height":606}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"molecular structure diagram","caption_source":"content.json:img_caption"},"width":509,"height":1336,"image_format":"jpeg","image_sha256":"d604f49508cf7f3f02d593d68cc67b9b568e2baf4415fd952f97d83e6e07f3e1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/multi-axis-chart/test/metadata.jsonl b/subsets/multi-axis-chart/test/metadata.jsonl index 8007446195e99951ab01dedd7249b348926eaf75..686375fef162f1c07c62d061abc81c67353505ed 100644 --- a/subsets/multi-axis-chart/test/metadata.jsonl +++ b/subsets/multi-axis-chart/test/metadata.jsonl @@ -1,26 +1,26 @@ -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_10.jpg","caption":"Figure 10. Electrical properties of low-temperature $\\mathrm{Al}_2\\mathrm{O}_3$ ALD films grown using 300 reaction cycles on $n\\mathrm{-Si}(100)$ .","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_10","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_10","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":594,"height":369,"image_format":"jpeg","image_sha256":"227558bd79c3fc3088fb044d68717638423f2ca35b388613701b5314cc1cc540","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":594,"height":369}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the relationship between growth temperature and two properties: dielectric constant and breakdown field. The breakdown field shows a slight increase with increasing temperature, while the electric constant shows no correlation with temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Growth Temperature (°C) | Dielectric Constant, k | Breakdown Field (MV/cm) |\\n|---|---|---|\\n| 33 | 7.5 | 3.7 |\\n| 58 | 8.2 | 4.0 |\\n| 80 | 7.2 | 4.5 |\\n| 102 | 7.8 | 4.1 |\\n| 125 | 8.4 ; 7.5 | 4.2 |\\n| 177 | 7.5 | 4.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There is no correlation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There is a slight positive correlation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Breakdown field.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The higher growth temperature range appears to produce the most electrically robust films, as the breakdown field increases with growth temperatures, while the dielectric constant remains stable. The breakdown field indicates the maximum electric field the film can withstand before electrical failure. Therefore, a higher breakdown field means the film is more resistant to damage under high voltage.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_11.jpg","caption":"Figure 11. O/Al ratio and H concentrations for $\\mathrm{Al}_2\\mathrm{O}_3$ ALD films as determined by RBS and FRS versus growth temperatures from 33 to $177^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_11","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_11","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":550,"height":358,"image_format":"jpeg","image_sha256":"a1671b7230d391ca3fa05f76d146eaf70ddbb5bfa5e3c5121becf2184cf54ed8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":550,"height":358}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between growth temperature and two variables: hydrogen content (in at.%) and oxygen-to-aluminum atom ratio (O/Al). Hydrogen content shows a negative correlation with growth temperature, and the O/Al ratio shows no correlation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Growth Temperature (°C) | H (atom %) | O/Al atom ratio |\\n|---|---|---|\\n| 32 | 21,86 | 1,66 |\\n| 57 | 19,37 | 1,29 |\\n| 79 | 15,99 | 1,41 |\\n| 101 | 14,51 | 1,37 |\\n| 124 | 10,80 | 1,36 |\\n| 177 | 7,09 | 1,42 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There is a negative correlation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There is no correlation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ 1.34 to 1.70.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The O/Al ratio in the measured film is closest to that at 177 °C. The O/Al ratio in stoichiometric Al₂O₃ is 1.5. At 177 °C, the measured O/Al ratio of 1.42 is closer to 1.5 than the values at lower temperatures.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_5.jpg","caption":"FIG. 5. (Color online) Ion-surface interactions during plasma processes with respect to ion flux and ion energy (Ref. 345). The typical operating windows for remote plasma ALD and other plasma-based processes are indicated. Reprinted with permission from T. Tagaki, J. Vac. Sci. Technol. A 2, 382 (1984). Copyright 1984 American Vacuum Society.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_5","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":680,"height":516,"image_format":"jpeg","image_sha256":"73fa4a81dfb3b2e442d0055e98bd66601a24b22a355ff6ca9942244a8a6cd7e2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":680,"height":516}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The auto summary accurately identifies that the chart relates ion flux density and ion energy and mentions key processes like film deposition, plasma chemistry, and ALD. However, it could be improved by noting that the axes are logarithmic, which affects the interpretation of spatial relationships between regions. It also does not mention the conceptual groupings (e.g., adatom migration, sputtering, implantation) marked across the top of the plot, which provide additional mechanistic context.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Process | Ion Energy Range (eV) | Ion Flux Density Range (cm⁻²s⁻¹) |\\n|-------------------|------------------------|----------------------------------|\\n| ALD | 1 – 10 | 10⁹ – 10¹² |\\n| Plasma Chemistry | 1 – 10³ | 10⁹ – 10¹⁵ |\\n| Film Deposition | 1 – 10⁴ | 10⁹ – 10¹⁸ |\\n| Etching | 10 – 10⁴ | 10¹¹ – 10¹⁷ |\\n| Implantation | 10² – 10⁵ | 10¹⁴ – 10¹⁷ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It maps typical ion energy and flux conditions for processes like ALD, etching, and implantation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Atomic layer deposition (ALD) occurs in a region of low ion energy and moderate-to-low ion flux, reflecting its surface-limited, gentle chemistry. In contrast, processes like implantation and etching require higher ion energies and, in the case of implantation, significantly higher flux densities. This demonstrates that ALD is well-suited for precise, conformal coatings where minimal ion damage is critical.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Adatom migration, Desorption, Sticking, Lattice displacement, Sputtering, Implantation\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_19_fig_6.jpg","caption":"Fig. 6 Selected representative capacitance-voltage and dissipation-voltage curves of $\\mathrm{ZrO_2}$ thin films deposited from $(\\mathrm{CpMe})_2\\mathrm{ZrMe}_2$ at $350^{\\circ}\\mathrm{C}$ (upper panel) and $(\\mathrm{CpMe})_2\\mathrm{Zr(OMe)Me}$ at $300^{\\circ}\\mathrm{C}$ (lower panel).","id":"test/atomic-layer-deposition/experimental-usecase/19/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/19/fig_6","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/Jaakko Niinisto et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":587,"height":767,"image_format":"jpeg","image_sha256":"18f45877952273869e4098836a0f548ed817d6fb6100ee00a3e8a955661fb51e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":583,"height":389},{"panel_id":"b","x":9,"y":399,"width":573,"height":372}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows Capacitance–Voltage (C–V) and Dissipation–Voltage (D–V) curves for a ZrO₂ thin film (thickness: 13.1 nm) deposited using the (CpMe)₂ZrMe₂/O₃ process. Measurements were performed at three frequencies: 100 kHz, 500 kHz, and 1 MHz. The capacitance is high under negative bias (accumulation), decreases sharply near 0 V (depletion), and saturates at a lower value under positive bias (inversion), which is characteristic of a metal–oxide–semiconductor (MOS) structure.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows Capacitance–Voltage (C–V) and Dissipation–Voltage (D–V) curves for a ZrO₂ thin film (thickness: 11.9 nm) deposited using the (CpMe)₂Zr(OMe)Me₂/O₃ process. Measurements were performed at three frequencies: 100 kHz, 500 kHz, and 1 MHz. The capacitance and dissipation values showed almost similar behavior as the previous label.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Bias voltage, V | C, 100 kHz | C, 500 kHz | C, 1 MHz | D, 100 kHz | D, 500 kHz | D, 1 MHz |\\n|---|---|---|---|---|---|---|\\n|-4 | 1.6e-09 | 1.6e-09 | 1.6e-09 | 0.02 | 0.1 | 0.2 |\\n|-3 | 1.5e-09 | 1.5e-09 | 1.5e-09 | 0.02 | 0.1 | 0.2 |\\n|-2 | 1.0e-09 | 1.0e-09 | 1.0e-09 | 0.01 | 0.0 | 0.1 |\\n|-1.5 | 0.2e-09 | 0.2e-09 | 0.2e-09 | 0.6 | 0.6 | 0.6 |\\n|-1 | 0.1e-09 | 0.1e-09 | 0.1e-09 | 0.0 | 0.0 | 0.0 |\\n| 0 | 0.1e-09 | 0.1e-09 | 0.1e-09 | 0.0 | 0.0 | 0.0 |\\n| 1 | 0.1e-09 | 0.1e-09 | 0.1e-09 | 0.0 | 0.0 | 0.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Bias voltage, V | C, 100 kHz | C, 500 kHz | C, 67, 1 MHz | D, 100 kHz | D, 500 kHz | D, 1 MHz |\\n|---|---|---|---|---|---|---|\\n|-5 | 1.8e-09 | 1.7e-09 | 1.6e-09 | 0.25 | 0.2 | 0.1 |\\n|-4 | 1.6e-09 | 1.5e-09 | 1.4e-09 | 0.1 | 0.2 | 0.1 |\\n|-3 | 1.4e-09 | 1.3e-09 | 1.2e-09 | 0.05 | 0.15 | 0.05 |\\n|-2 | 1.2e-09 | 1.1e-09 | 1.0e-09 | 0.0 | 0.1 | 0.0 |\\n|-1 | 1.0e-09 | 9.0e-10 | 8.0e-10 | 0.8 | 0.8 | 0.8 |\\n| 0 | 2.0e-10 | 2.0e-10 | 2.0e-10 | 0.0 | 0.0 | 0.0 |\\n| 1 | 2.0e-10 | 2.0e-10 | 2.0e-10 | 0.0 | 0.0 | 0.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The \\\"hump\\\" is caused by the charging and discharging of interface trap states (D_it) at the ZrO₂/Si interface. As the DC bias sweeps through the depletion region, the Fermi level aligns with the energy levels of these traps. At lower measurement frequencies, carriers have enough time to respond to the AC signal by filling and emptying these traps, contributing an additional capacitance that appears as a hump. At very high frequencies, this response lags, and the hump diminishes.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 11.9 nm film has a CET of 3.9 nm, while the 13.1 nm film has a CET of 4.3 nm. Although the physical thickness differs by 1.2 nm, the CET only increases by 0.4 nm. This reveals that the dielectric constant (κ) scales effectively, and the thicker film does not proportionally increase the equivalent electrical thickness, which is favorable for device scaling.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It maps directly to the density of interface trap states (D_it) at the ZrO₂/Si interface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both precursors yield films with comparable interface quality, so the decision would not be based on trap density. Selection would instead prioritize other factors like the precursor's thermal stability, growth rate, and compatibility with the thermal budget. The key inference is that either precursor can meet the baseline electrical requirement for gate dielectric applications.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_20_fig_5.jpg","caption":"Fig. 5 Average growth per cycle and lithium concentration of LLT films as a function of $\\mathrm{LiO}^{\\prime}\\mathrm{Bu}$ pulse time. The pulsing scheme was $400 \\times (1 \\times \\mathrm{TiO}_{2} + 3 \\times \\mathrm{La}_{2}\\mathrm{O}_{3} + 1 \\times \\mathrm{Li}_{2}\\mathrm{O})$ .","id":"test/atomic-layer-deposition/experimental-usecase/20/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/20/fig_5","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/Titta Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":597,"height":392,"image_format":"jpeg","image_sha256":"70328a9e220bed009ac1201ae8f1905ba87b413225083757d0f15bc1f2d00940","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":597,"height":392}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the growth per cycle and lithium concentration in at% as a function of lithium tert-butoxide pulse time at a deposition temperature of 225°C. Both curves show saturation behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Lithium tert-butoxide pulse time (s)' | Growth per cycle (Å/cycle) | Lithium concentration (at.%) |\\n|---|---|---|\\n| 0 | 0.28 | 0.01 |\\n| 2 | 0.37 | 0.08 |\\n| 4 | 0.43 | 0.15 |\\n| 8 | 0.47 | 0.20 |\\n| 12 | 0.48 | 0.21 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After approx. 8 s. pulse time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After approx. 8 s. pulse time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. At 4 seconds, both the growth rate (~0.43 Å/cycle) and lithium concentration (~15 at.%) are still rising steeply and are clearly lower than the values observed at 8 and 12 seconds. This indicates that 4 seconds is insufficient.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_24_figure_2.jpg","caption":"Figure 2. Film thickness and film uniformity on a $300~\\mathrm{mm}$ wafer for different precursor pulse times. The error bars indicate the minimum and maximum thickness as measured by XRR. The half range is defined as the thickness range divided by two divided by the mean thickness.","id":"test/atomic-layer-deposition/experimental-usecase/24/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/24/figure_2","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/Martin Rose et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":633,"height":453,"image_format":"jpeg","image_sha256":"4d5ab501d99ee55878a1d0ca03c5789919c4a3d421a8b880531c2b4e5937cebb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":633,"height":448}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the saturation behavior of a Ti-based ALD process on a 300 mm wafer at 280 °C. The mean film thickness remains nearly constant at ~4.8–5.0 nm across pulse times, confirming self-limiting growth, while large error bars at short pulses indicate poor wafer-scale coverage. Uniformity improves from ~9% at 100 ms to below 1% at ~1000 ms, demonstrating that sufficient pulse time is required to achieve uniform deposition over large areas.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ti Precursor Pulse Time (ms) | Value | Parameter |\\n|-----------------------------|-------|-----------|\\n| 0 | | Mean film thickness (nm) |\\n| 0 | | Uniformity (%) |\\n| 100 | 5.17 | Mean film thickness (nm) |\\n| 100 | 8.7 | Uniformity (%) |\\n| 200 | 4.95 | Mean film thickness (nm) |\\n| 200 | 4.91 | Uniformity (%) |\\n| 300 | 4.96 | Mean film thickness (nm) |\\n| 300 | 5.63 | Uniformity (%) |\\n| 400 | 4.89 | Mean film thickness (nm) |\\n| 400 | 7.4 | Uniformity (%) |\\n| 500 | 4.71 | Mean film thickness (nm) |\\n| 500 | 5.36 | Uniformity (%) |\\n| 600 | 4.86 | Mean film thickness (nm) |\\n| 600 | 4.3 | Uniformity (%) |\\n| 700 | 4.78 | Mean film thickness (nm) |\\n| 700 | 2.09 | Uniformity (%) |\\n| 800 | 4.88 | Mean film thickness (nm) |\\n| 800 | 2.32 | Uniformity (%) |\\n| 900 | 4.86 | Mean film thickness (nm) |\\n| 900 | 1.4 | Uniformity (%) |\\n| 1000 | | Mean film thickness (nm) |\\n| 1000 | 0.864 | Uniformity (%) |\\n| 1100 | | Mean film thickness (nm) |\\n| 1100 | 0.66 | Uniformity (%) |\\n| 1200 | | Mean film thickness (nm) |\\n| 1200 | 0.79 | Uniformity (%) |\\n| 1300 | | Mean film thickness (nm) |\\n| 1300 | | Uniformity (%) |\\n| 1400 | | Mean film thickness (nm) |\\n| 1400 | | Uniformity (%) |\\n| 1500 | 4.96 | Mean film thickness (nm) |\\n| 1500 | 1.17 | Uniformity (%) |\\n| 1600 | | Mean film thickness (nm) |\\n| 1600 | | Uniformity (%) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The repeated sequence is: 1) Ti precursor pulse, 2) Purge, 3) Reactant pulse (e.g., H₂O), 4) Purge. A longer precursor pulse allows more time for the precursor to diffuse and fully saturate all reactive sites on the wafer surface, increasing the adsorbed amount per cycle and thus the growth per cycle (GPC) until saturation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both 1000 ms and 1500 ms yield <1% uniformity and ~5 nm thickness. The process result is identical. Trade-off: Operating at 1500 ms is wasteful. The specific cost driver is Precursor consumption and throughput. The extra 500 ms per cycle adds up significantly over thousands of cycles (e.g., adding minutes to the process time) and wastes expensive Titanium precursor that is simply pumped out of the exhaust without reacting, increasing the cost.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Uniformity improves then slightly degrades. At short pulses, precursor depletion across the wafer causes center-to-edge non-uniformity. An intermediate pulse allows full, even saturation (best uniformity). Very long pulses may lead to parasitic CVD or desorption, reintroducing non-uniformity.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The optimal range is just beyond the knee where thickness saturates and uniformity is near its peak (~150-200 ms). This ensures reproducible thickness (controlled GPC) and excellent wafer-scale uniformity, both of which are critical for device performance and yield in integrated circuit manufacturing.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_24_figure_3.jpg","caption":"Figure 3. Growth per cycle and film density for substrate temperatures between 235 and $350^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-deposition/experimental-usecase/24/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/24/figure_3","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/Martin Rose et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":627,"height":437,"image_format":"jpeg","image_sha256":"9942ea09421bab8d082b9699a37d7fb3c6df4a22c3f1b46009bf93d9dd1dc064","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":627,"height":432}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure represents how substrate temperature affects two key properties in an ALD process: Growth Per Cycle (GPC) increases monotonically with temperature, while Film Density peaks at an optimal temperature (~325°C) before decreasing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Substrate temperature (°C) | Value | Condition |\\n|---------------------------:|------:|-------------------------------|\\n| 225.0 | | Growth per cycle (Å) |\\n| 225.0 | | Film density (g/cm³) |\\n| 233.5 | 0.21 | Growth per cycle (Å) |\\n| 233.5 | 3.89 | Film density (g/cm³) |\\n| 245.31 | 0.20 | Growth per cycle (Å) |\\n| 245.31 | 3.93 | Film density (g/cm³) |\\n| 256.5 | 0.21 | Growth per cycle (Å) |\\n| 256.5 | 3.97 | Film density (g/cm³) |\\n| 268.0 | 0.23 | Growth per cycle (Å) |\\n| 268.0 | 3.99 | Film density (g/cm³) |\\n| 280.0 | 0.23 | Growth per cycle (Å) |\\n| 280.0 | 4.00 | Film density (g/cm³) |\\n| 291.8 | 0.26 | Growth per cycle (Å) |\\n| 291.8 | 4.00 | Film density (g/cm³) |\\n| 324.0 | 0.28 | Growth per cycle (Å) |\\n| 324.0 | 4.18 | Film density (g/cm³) |\\n| 350.0 | 0.50 | Growth per cycle (Å) |\\n| 350.0 | 3.97 | Film density (g/cm³) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The loss of control is signaled by the simultaneous spike in Growth Per Cycle (rising to ~0.5 Å) and the sharp drop in Film Density (falling to <4.0 g/cm³). This divergence typically indicates precursor thermal decomposition (CVD component), where the reaction is no longer limited by surface sites but by the continuous supply of reactant, leading to rapid but porous growth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"325°C is the superior choice. It maximizes the critical density metric for barrier performance. Furthermore, there is no throughput penalty; in fact, the growth rate is higher at 325°C, making it a \\\"win-win\\\" operating point compared to 275°C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increasing thermal energy enhances the surface diffusion of adsorbed species, allowing atoms to settle into thermodynamically favorable, tightly packed lattice positions. This structural ordering reduces voids and efficiently removes bulky ligands, resulting in the continuous densification observed up to the 325°C thermal stability limit.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sharp drop in density at 350°C indicates a porous, defect-rich microstructure likely containing trapped impurities from the decomposed precursor. For a gate dielectric, such defects act as leakage paths and charge traps. Consequently, this film would exhibit high leakage current and poor electrical reliability, failing to insulate the gate effectively despite the manufacturing speed advantage.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_39_fig_3.jpg","caption":"FIG. 3. (Color online) Growth rate per cycle as measured by SE at deposition temperatures of 70 and $200^{\\circ}\\mathrm{C}$ as a function of the number of successive $\\mathrm{Al}(\\mathrm{CH}_3)_3$ exposures used per ALD cycle. Also the mass gain determined by QCM measurements at $70^{\\circ}\\mathrm{C}$ is given.","id":"test/atomic-layer-deposition/experimental-usecase/39/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/39/fig_3","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/Heil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":669,"height":492,"image_format":"jpeg","image_sha256":"12568a1a62639712d12678721fe9d036b0476ce7e0743dc2902fe255dadbf113","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":492}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the growth rate of SE (angstroms per cycle) at 70 and 200 °C and QCM mass gain (Hz) against the number of Al(CH₃)₃ exposures per cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Al(CH₃)₃ exp. per cycle | SE: Growth rate (Å/cycle) 70 °C |SE: Growth rate (Å/cycle) 200 °C | QCM: Mass gain (Hz) 70 °C |\\n|---|---|---|---|\\n| 1 | 1.2 | 1.0 | 4.25 |\\n| 2 | 1.5 | 1.2 | 5.5 |\\n| 3 | 1.6 | 1.25 | 6.0 |\\n| 4 | 1.7 | | 6.5 |\\n| 6 | 1.7 | | 6.5 |\\n| 8 | | 1.25 | |\\n| 10 | 1.8 | | 6.75 |\\n| 15 | 1.8 | | 6.75 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.27 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.66 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 7 Hz.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At both 70 and 200 °C, the growth rate increases sharply and then plateaus. The final growth rates are 1.8 and 1.27 Å/cycle for 70 and 200 °C, respectively. Saturated growth is observed at both temperatures, which means the process meets the requirements of ALD.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_48_fig_3.jpg","caption":"FIG. 3. (Color online) Real $(\\epsilon_{1})$ and imaginary $(\\epsilon_{2})$ part of the dielectric function as a function of photon energy measured by ex situ SE. The sharp features at a growth temperature of $400^{\\circ}\\mathrm{C}$ indicate the polycrystalline structure of the film. The transition from smooth to sharp dielectric function for films grown at $400^{\\circ}\\mathrm{C}$ can be observed in the inset.","id":"test/atomic-layer-deposition/experimental-usecase/48/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/48/fig_3","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/Sharma et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"48","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":609,"height":452,"image_format":"jpeg","image_sha256":"487c9d4b729825fc6da243a1194df0d407e93e6533228d0aae70dfb8a47f7f2a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":609,"height":452}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure compares the optical dielectric function of films grown at different temperatures (150–400 °C) as a function of photon energy. The left axis shows the real part ε₁, which increases with photon energy and shows modest temperature-dependent shifts. The right axis shows the imaginary part, ε₂ (optical absorption), which is near zero at low energies and then rises sharply around ~5.5–6+ eV.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature, °C | Photon energy (eV) | ε₁ | ε₂ |\\n|---|---|---|---|\\n| 150 | 1.2 | 3.8 | 0.01 |\\n| 150 | 5 | 5.3| 0.01 |\\n| 150 | 6.4 | 8.2 | 1.7 |\\n| 200 | 1.2 | 3.9 | 0.01 |\\n| 200 | 5 | 5.6| 0.01 |\\n| 200 | 6.4 | 8.6 | 1.8 |\\n| 250 | 1.2 | 3.9 | 0.01 |\\n| 250 | 5 | 5.6| 0.01 |\\n| 250 | 6.4 | 8.9 | 1.8 |\\n| 300 | 1.2 | 3.9 | 0.01 |\\n| 300 | 5 | 5.9| 0.01 |\\n| 300 | 6.4 | 9.2 | 1.9 |\\n| 350 | 1.2 | 4 | 0.01 |\\n| 350 | 5 | 5.9| 0.01 |\\n| 350 | 6.4 | 9.1 | 1.9 |\\n| 400 | 1.2 | 4.0 | 0.01 |\\n| 400 | 5 | 5.8| 0.01 |\\n| 400 | 6.0 | 7.7 | 0.86 |\\n| 400 | 6.4 | 8.7 | 1.2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film grown at 400 °C shows the highest refractive index. In the low-photon-energy region where ε₂ ≈ 0, the 400 °C curve has the highest ε₁. The higher value of ε₁ in this region corresponds to the higher refractive index.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film grown at 400 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film grown at 150 °C .\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_51_fig_5.jpg","caption":"Fig. 5 Refractive index $n$ and extinction coefficient $k$ of the produced $\\mathrm{MoO}_x$ layer as determined from spectroscopic ellipsometry","id":"test/atomic-layer-deposition/experimental-usecase/51/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/51/fig_5","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/Ziegler et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":653,"height":517,"image_format":"jpeg","image_sha256":"cff23cfd8da1c5866ed6b475ef0c7620ceb2001d566e3161708b6bc11ef79fbf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":653,"height":517}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the refractive index n and extinction coefficient k of materials under different conditions of oxygen and argon exposure over a range of photon energies.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | refractive index n | extinction coefficient k |\\n|---|---|---|\\n| 2 second O2 | Exponential increase from (1.5 eV, n = 1.8) to (3.0 eV, n = 2.2) | Constant at k = 0 |\\n| 2 second O2 & Ar | Exponential increase from (1.5 eV, n = 1.9) to (3.0 eV, n = 2.3) | Constant at > 0 |\\n| 1 second O2 | Peak at 2 eV, trough at 2.5 eV | Peak at 2.25 eV, trough at 2.75 eV |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The three samples differed in plasma type and exposure time; 1 s O2 plasma, 2 s O2 plasma, 2 s O2 and 2 s Ar plasma.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1 s oxygen plasma exposure caused the sample to still have a nonzero extinction index, whereas 2 s oxygen plasma exposure led to no extinction index. The additional argon plasma exposure led to a small and constant extinction index.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 1 s oxygen has a clear peak and trough, whereas the samples exposed to 2 seconds of oxygen plasma only show an exponential increase (as a function of photon energy).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 0.1.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG11.jpg","caption":"FIG. 11. Calculated energy flux density delivered to the surface via ions (open circles) as well as ions and fast neutrals (squares) plotted as a function of pressure, power, and $\\mathrm{O}_2$ flow fraction. The dotted lines represent the estimated energy flux density from ions and fast neutrals necessary for the onset of crystallization ( $\\approx 0.02\\mathrm{W} / \\mathrm{m}^2$ ) and saturation in crystalline character ( $\\approx 0.04\\mathrm{W} / \\mathrm{m}^2$ ). The area of Mixed Crystalline Character showed weak evidence of the crystalline material. The boundaries for crystallization thresholds are estimated from thin film characterizations.","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG11","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG11","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":1395,"height":406,"image_format":"jpeg","image_sha256":"90ecc61763eadb51b583c4d0c8dd280b43ca04f2b89bcc4d564cae10655f86c1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":490,"height":404},{"panel_id":"b","x":501,"y":6,"width":402,"height":396},{"panel_id":"c","x":901,"y":9,"width":484,"height":395}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"In panel (a), increasing pressure leads to a rapid decline in energy flux for both \\\"Ions + fast neutrals\\\" and \\\"Ions only\\\", with fast neutrals contributing significantly to overall flux.\"},{\"panel_id\":\"b\",\"text\":\"Panel (b) demonstrates a sharp increase in energy flux with power in a CCP system, transitioning from amorphous to mixed, and eventually to crystalline film growth at high power.\"},{\"panel_id\":\"c\",\"text\":\"Panel (c) displays a similar trend with increasing O₂ flow fraction, low fractions result in amorphous material, while higher flow promotes crystalline structure. The figure shows how process parameters directly influence energy delivery and crystalline phase formation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pressure (mTorr) | Energy Flux Density - Ions + Fast Neutrals (W/m²) | Energy Flux Density - Ions Only (W/m²) |\\n|------------------|---------------------------------------------------|----------------------------------------|\\n| 500 | 0.14 | 0.03 |\\n| 1000 | 0.10 | 0.02 |\\n| 1500 | 0.08 | 0.01 |\\n| 2000 | 0.06 | 0.007 |\\n| 3000 | 0.04 | 0.005 |\\n| 4000 | 0.03 | 0.004 |\\n| 5000 | 0.02 | 0.003 |\"},{\"panel_id\":\"b\",\"text\":\"| Power (W) | Energy Flux Density (W/m²) | Crystallinity |\\n|-----------|-----------------------------|----------------|\\n| 100 | 0.1 | Amorphous |\\n| 200 | 0.2 | Amorphous |\\n| 300 | 0.4 | Mixed |\\n| 400 | 0.8 | Mixed |\\n| 500 | 1.2 | Mixed |\\n| 600 | 1.6 | Crystalline |\\n| 700 | 2.0 | Crystalline |\\n| 800 | 2.4 | Crystalline |\\n| 900 | 2.6 | Crystalline |\\n| 1000 | 2.8 | Crystalline |\"},{\"panel_id\":\"c\",\"text\":\"| O₂ Flow Fraction | Energy Flux Density (W/m²) | Crystallinity |\\n|------------------|-----------------------------|----------------|\\n| 0.0 | 0.03 | Amorphous |\\n| 0.1 | 0.04 | Amorphous |\\n| 0.2 | 0.05 | Mixed |\\n| 0.3 | 0.06 | Mixed |\\n| 0.4 | 0.07 | Mixed |\\n| 0.5 | 0.08 | Crystalline |\\n| 0.6 | 0.09 | Crystalline |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As RF power increases from 100 W to 1000 W, the energy flux density rises sharply from approximately 0.1 W/m² to nearly 3 W/m². This dramatic increase correlates with a transition in material crystallinity—from amorphous at low power to mixed-phase, and ultimately crystalline at higher power levels. The figure clearly shows that there is a threshold energy flux beyond which crystalline growth becomes favored, highlighting the role of plasma energy input in driving film ordering and structure.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Pressure (mTorr), RF Power (W), O₂ flow fraction\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approx. 600 W\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG12.jpg","caption":"FIG. 12. Ion energies derived from the measured plasma potential (squares) and from the calculated average ion energy (circles) plotted as a function of pressure, power, and $\\mathrm{O}_2$ flow fraction. The dotted lines represent the estimated ion energy necessary for the onset of crystallization ( $\\approx 11\\mathrm{eV}$ ) and fully developed crystalline character ( $\\approx 17\\mathrm{eV}$ ). The area of Mixed Crystalline Character showed weak evidence of the crystalline material. The boundaries for crystallization thresholds are estimated from thin film characterizations.","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG12","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG12","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":1392,"height":411,"image_format":"jpeg","image_sha256":"e684f8d5b4febcd00b31dbb55e6baa92cfc81d67abc855b1e68ddf5f0323e697","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":487,"height":409},{"panel_id":"b","x":497,"y":9,"width":401,"height":405},{"panel_id":"c","x":902,"y":5,"width":487,"height":403}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Panel (a) shows that increasing pressure reduces both plasma potential and ion energy.\"},{\"panel_id\":\"b\",\"text\":\"Panel (b) reveals that increasing RF power leads to a steady rise in ion energy.\"},{\"panel_id\":\"c\",\"text\":\"Panel (c) illustrates that higher O₂ flow fractions also result in increased ion energy, with a transition from amorphous to crystalline film regimes indicated in the central panel.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pressure (mTorr) | Plasma Potential (eV) | Mean Ion Energy (eV) |\\n|------------------|------------------------|------------------------|\\n| 830 | ~42 | ~22 |\\n| 1600 | ~38 | ~20 |\\n| 2400 | ~34 | ~18 |\\n| 3000 | ~31 | ~15 |\\n| 4300 | ~27 | ~13 |\\n| 5000 | ~25 | ~10 |\"},{\"panel_id\":\"b\",\"text\":\"| Power (W) | Ion Energy (eV) |\\n|-----------|-----------------|\\n| 100 | ~22 |\\n| 200 | ~24 |\\n| 300 | ~26 |\\n| 400 | ~28 |\\n| 500 | ~30 |\\n| 600 | ~33 |\\n| 700 | ~36 |\\n| 800 | ~38 |\\n| 900 | ~40 |\\n| 1000 | ~42 |\"},{\"panel_id\":\"c\",\"text\":\"| O₂ Flow Fraction | Ion Energy (eV) |\\n|------------------|------------------|\\n| 0.0 | ~25 |\\n| 0.1 | ~27 |\\n| 0.2 | ~30 |\\n| 0.3 | ~33 |\\n| 0.4 | ~36 |\\n| 0.5 | ~40 |\\n| 0.6 | ~43 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Power results in the steepest increase in ion energy\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As pressure increases, both the plasma potential and mean ion energy decrease. This is attributed to the enhanced collisionality in higher-pressure regimes, which leads to energy loss through collisions, reducing the kinetic energy of ions reaching the surface. Lower plasma potentials also indicate a reduced driving force for ion acceleration. These combined effects diminish the energy transferred to the surface, influencing film growth and etching behaviour.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Prevents ion damage, Controls crystallinity, Optimizes selectivity and anisotropy, Maintains uniform growth and interface quality\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG4_b.jpg","caption":"Capacitively coupled FIG. 4. (a) Atomic O density vs plasma power measured with OES. (b) Ion flux and plasma potential as a function of plasma power. Gray regions of each plot represent processing space in which the plasma operated in a capacitively coupled mode.","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG4_b","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG4_b","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"b","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG4_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG4_b.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"b","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":741,"height":506,"image_format":"jpeg","image_sha256":"85366f9cb135922a5dee68a91c194464d5ed9c462c5760f92853233e5cf31d2b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":0,"width":741,"height":506}],"summarization":"[{\"panel_id\":\"b\",\"text\":\"This figure plots both ion flux and plasma potential as functions of power in an inductively coupled plasma (ICP) system. As RF power increases from 0 to 1000 W, both plasma potential (red circles) and ion flux (black squares) show upward trends. The plasma potential increases gradually and linearly from 0 V to 100 V, indicating a smooth energising of the plasma. In contrast, ion flux demonstrates a sharper, more nonlinear rise, particularly beyond the 600 W mark, indicating a threshold above which ion generation increases rapidly. This suggests that higher RF power significantly boosts the energy and quantity of charged species, which is critical for surface modification processes like etching or deposition\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"| Power (W) | Ion Flux (m⁻²·s⁻¹) × 10¹⁷ | Plasma Potential (V) |\\n|-----------|-----------------------------|------------------------|\\n| 0 | 0.0 | 0 |\\n| 50 | 2.0 | 10 |\\n| 100 | 2.0 | 10 |\\n| 150 | 3.0 | 20 |\\n| 200 | 3.0 | 20 |\\n| 250 | 4.0 | 30 |\\n| 300 | 4.0 | 30 |\\n| 350 | 5.0 | 40 |\\n| 400 | 5.0 | 40 |\\n| 450 | 6.0 | 50 |\\n| 500 | 6.0 | 50 |\\n| 550 | 7.0 | 60 |\\n| 600 | 7.0 | 60 |\\n| 650 | 8.0 | 70 |\\n| 700 | 8.0 | 70 |\\n| 750 | 9.0 | 80 |\\n| 800 | 9.0 | 80 |\\n| 850 | 10.0 | 90 |\\n| 900 | 10.0 | 90 |\\n| 950 | 11.0 | 100 |\\n| 1000 | 11.0 | 100 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both ion flux and plasma potential increase as the power rises from 0 W to 1000 W. However, their rates of increase differ. Plasma potential exhibits a relatively linear progression, climbing steadily from 0 V to 100 V. In contrast, ion flux remains low until approximately 500–600 W, after which it increases steeply, more than quadrupling in value. This disparity suggests a threshold behavior in ion production, where power beyond a critical value significantly enhances ion generation. This information is crucial for tuning plasma parameters in applications requiring high-density ion bombardment.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50 V\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"RF Power (W), Ion flux (m⁻²·s⁻¹), Plasma potential (V)\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG6_b.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG6_b","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG6_b","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"b","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG6_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG6_b.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"b","first_classification_label":"multi-axis chart","caption_source":"not_found"},"width":736,"height":516,"image_format":"jpeg","image_sha256":"d15da6a793c5c66e5b785bfd401a607ad6dc2cef7ffa76503c17743ca465680c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":0,"width":736,"height":516}],"summarization":"[{\"panel_id\":\"b\",\"text\":\"This multi-axis chart shows how ion flux and plasma potential vary with changes in O₂ flow fraction. As O₂ flow increases from 0.0 to 0.3, ion flux initially decreases, reaching a minimum, before increasing again at 0.5. In contrast, plasma potential exhibits a steady upward trend, rising from 20 V at 0.0 O₂ flow to 45 V at 0.5. This divergence suggests that while plasma potential becomes stronger with more oxygen, the ion flux behaviour is non-monotonic and may be influenced by other plasma chemistry factors.\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"| O₂ Flow Fraction | Ion flux (m⁻² s⁻¹) | Plasma Potential (V) |\\n|------------------|------------------|---------------------|\\n| 0.0 | 3×10¹⁶ | 20 |\\n| 0.1 | 2×10¹⁶ | 25 |\\n| 0.3 | 1.5×10¹⁶ | 30 |\\n| 0.5 | 3×10¹⁶ | 45 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ion flux does not follow a monotonic trend. It decreases between 0.0 and 0.3 O₂ flow fraction, reaching its lowest value at 0.3, then rises again at 0.5. In contrast, plasma potential steadily increases with increasing O₂ flow fraction, starting at 20 V and reaching 45 V at the highest flow rate. This indicates that oxygen affects ion energy and flux through different plasma mechanisms, likely involving electron density and ionisation efficiency\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.3 O₂ flow fraction\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Plasma potential controls ion energy, Ion flux sets reactive species count, Balance optimizes efficiency\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG8_b.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG8_b","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG8_b","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"b","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG8_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG8_b.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"b","first_classification_label":"multi-axis chart","caption_source":"not_found"},"width":741,"height":542,"image_format":"jpeg","image_sha256":"1df77695e2007a9ac2da53ee932be030593070568e2c98fde471489f228315df","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":0,"width":741,"height":542}],"summarization":"[{\"panel_id\":\"b\",\"text\":\"This multi-axis chart displays how ion flux and plasma potential change with increasing pressure for two plasma coupling modes. The ion flux decreases sharply between 500 mTorr and 2000 mTorr, then levels off, while the plasma potential steadily drops with pressure, stabilising around 10 V. The figure visually separates regions of capacitive coupling and inductive coupling, highlighting their different ion delivery characteristics in plasma processing.\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"| Pressure (mTorr) | Ion flux (m⁻² s⁻¹) | Plasma potential (V) |\\n|------------------|---------------------|-----------------------|\\n| 500 | 4.0 × 10¹⁶ | 50 |\\n| 1000 | 2.5 × 10¹⁶ | 25 |\\n| 2000 | 1.5 × 10¹⁶ | 20 |\\n| 3000 | 1.2 × 10¹⁶ | 15 |\\n| 4000 | 1.0 × 10¹⁶ | 12 |\\n| 5000 | 1.0 × 10¹⁶ | 10 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure shows that at low pressure (around 500 mTorr), capacitive coupling leads to a much higher plasma potential and significantly greater ion flux compared to inductive coupling. As pressure increases, ion flux drops steeply and levels off, while plasma potential also decreases. This indicates that capacitive coupling is more effective at delivering energetic ions to the surface in low-pressure conditions, while inductive coupling provides more moderate plasma potentials and ion fluxes across a broader pressure range.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2000 mTorr\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Reduced ion acceleration , Lower surface etch rates , Gentler plasma–material interactions\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_20_9175e11f30b3092758947bdf3aa32cd77f985f28f01e6a235760a45ca776fe97.jpg","caption":"","id":"test/atomic-layer-deposition/simulation-usecase/20/9175e11f30b3092758947bdf3aa32cd77f985f28f01e6a235760a45ca776fe97","sample_id":"atomic-layer-deposition/simulation-usecase/20/9175e11f30b3092758947bdf3aa32cd77f985f28f01e6a235760a45ca776fe97","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/9175e11f30b3092758947bdf3aa32cd77f985f28f01e6a235760a45ca776fe97.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/9175e11f30b3092758947bdf3aa32cd77f985f28f01e6a235760a45ca776fe97.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/Dongqing Pan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"not_found"},"width":645,"height":892,"image_format":"jpeg","image_sha256":"357ff7155183fa4c7120093d14cdc43d0b0608be534480c387c30bc8d5eecbf4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":4,"width":630,"height":451},{"panel_id":"b","x":8,"y":458,"width":634,"height":434}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"TMA and water concentrations at position B (water side) over time for three wafer temperatures (150°C, 200°C, 250°C). Higher temperature increases TMA (foreign precursor) concentration, with 250°C reaching approximately 1.5×10⁻⁵ mol/m³ compared to 0.8×10⁻⁵ mol/m³ at 150°C. Water (home precursor) reaches steady state faster at higher temperatures but achieves lower final concentration.\"},{\"panel_id\":\"b\",\"text\":\"TMA and water concentrations at position C (TMA side) over time for three wafer temperatures. Higher temperature increases water intermixing, with 250°C yielding approximately 2×10⁻⁴ mol/m³ water compared to 1.7×10⁻⁴ mol/m³ at 150°C. TMA (home precursor) shows slightly lower steady-state values at higher temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | TMA 150°C (mol/m³) | TMA 200°C (mol/m³) | TMA 250°C (mol/m³) | Water 150°C (mol/m³) | Water 200°C (mol/m³) | Water 250°C (mol/m³) |\\n|---|---|---|---|---|---|---|\\n| 0.000 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 0.005 | 0.01E-5 | 0.01E-5 | 0.01E-5 | 1.9E-3 | 1.5E-3 | 1.0E-3 |\\n| 0.010 | 0.05E-5 | 0.05E-5 | 0.08E-5 | 5.8E-3 | 4.8E-3 | 3.5E-3 |\\n| 0.015 | 0.20E-5 | 0.25E-5 | 0.35E-5 | 6.7E-3 | 5.8E-3 | 5.1E-3 |\\n| 0.020 | 0.45E-5 | 0.50E-5 | 0.65E-5 | 6.9E-3 | 6.1E-3 | 5.5E-3 |\\n| 0.025 | 0.70E-5 | 0.75E-5 | 0.90E-5 | 6.9E-3 | 6.1E-3 | 5.6E-3 |\\n| 0.030 | 0.82E-5 | 0.88E-5 | 1.05E-5 | 6.9E-3 | 6.2E-3 | 5.6E-3 |\\n| 0.040 | 0.85E-5 | 0.92E-5 | 1.10E-5 | 6.9E-3 | 6.2E-3 | 5.6E-3 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | TMA 150°C (mol/m³) | TMA 200°C (mol/m³) | TMA 250°C (mol/m³) | Water 150°C (mol/m³) | Water 200°C (mol/m³) | Water 250°C (mol/m³) |\\n|---|---|---|---|---|---|---|\\n| 0.000 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 0.005 | 0.25E-3 | 0.15E-3 | 0.10E-3 | 0.00 | 0.00 | 0.00 |\\n| 0.010 | 1.20E-3 | 0.80E-3 | 0.60E-3 | 0.15E-4 | 0.20E-4 | 0.10E-4 |\\n| 0.015 | 2.50E-3 | 1.90E-3 | 1.40E-3 | 0.90E-4 | 1.00E-4 | 1.10E-4 |\\n| 0.020 | 3.60E-3 | 2.80E-3 | 2.20E-3 | 1.40E-4 | 1.60E-4 | 1.80E-4 |\\n| 0.025 | 4.10E-3 | 3.50E-3 | 2.80E-3 | 1.70E-4 | 1.90E-4 | 2.20E-4 |\\n| 0.030 | 4.30E-3 | 3.80E-3 | 3.10E-3 | 1.80E-4 | 2.10E-4 | 2.40E-4 |\\n| 0.040 | 4.40E-3 | 4.00E-3 | 3.30E-3 | 1.90E-4 | 2.20E-4 | 2.60E-4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Temperature has a moderate effect on intermixing, increasing foreign precursor concentrations at both monitoring positions as temperature rises from 150°C to 250°C. However, gap size has the strongest influence on intermixing (Figure 4 shows an 8-fold difference between 1 mm and 2 mm gaps), while pumping pressure has an intermediate effect. Temperature uniquely affects both intermixing and deposition kinetics, creating a trade-off since higher temperatures improve film growth rate but worsen precursor separation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At higher temperatures, the gas expands and has lower density, and enhanced diffusion distributes water molecules more broadly, resulting in slightly lower local concentrations at the monitoring position.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200°C offers a reasonable compromise, providing good deposition rate (approximately 1.2 Å/cycle) while maintaining moderate intermixing levels, compared to 250°C which has higher intermixing or 150°C which has slower deposition kinetics.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher temperature accelerates diffusive mass transport by increasing molecular kinetic energy, which enhances the movement of precursor molecules across the separating gas barriers into neighboring zones.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_20_fig_3.jpg","caption":"Fig. 3. The effects of gap size on precursor intermixing with ideal pumping condition (0.22 torr) and $200^{\\circ}$ C deposition temperature: (a) TMA and water concentration in $\\mathrm{mol} / \\mathrm{m}^3$ at water side (position B) with gap size 1, 1.5, and $2 \\mathrm{mm}$ , and (b) at TMA side (position C) with gap size 1, 1.5, and $2 \\mathrm{mm}$ .","id":"test/atomic-layer-deposition/simulation-usecase/20/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/20/fig_3","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/Dongqing Pan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":677,"height":919,"image_format":"jpeg","image_sha256":"839d8283fa703d81770793f2a88b8942ccb9b12a10fa12be353a2d007554c1ed","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":1,"width":664,"height":457},{"panel_id":"b","x":4,"y":463,"width":669,"height":453}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"TMA and water concentrations at position B (water side) over time for three gap sizes. The left axis shows TMA (the foreign precursor at this location) reaching steady state concentrations of approximately 3×10⁻⁵ mol/m³ for 1 mm gap versus less than 1×10⁻⁵ mol/m³ for larger gaps. The right axis shows water (home precursor) concentration, which reaches steady state faster for larger gaps.\"},{\"panel_id\":\"b\",\"text\":\"TMA and water concentrations at position C (TMA side) over time for three gap sizes. TMA (home precursor, left axis) reaches approximately 4×10⁻³ mol/m³ at steady state for all gaps, while water (foreign precursor, right axis) shows higher intermixing levels, particularly for 1 mm gap where water concentration reaches approximately 5×10⁻⁴ mol/m³.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | TMA-1mm (mol/m³) | TMA-1.5mm (mol/m³) | TMA-2mm (mol/m³) | Water-1mm (mol/m³) | Water-1.5mm (mol/m³) | Water-2mm (mol/m³) |\\n|---|---|---|---|---|---|---|\\n| 0.00 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 0.01 | 0.00 | 0.10E-5 | 0.10E-5 | 0.10E-3 | 3.8E-3 | 5.5E-3 |\\n| 0.02 | 0.05E-5 | 0.50E-5 | 0.30E-5 | 0.20E-3 | 5.8E-3 | 6.5E-3 |\\n| 0.03 | 0.10E-5 | 0.80E-5 | 0.30E-5 | 1.0E-3 | 6.2E-3 | 6.6E-3 |\\n| 0.04 | 0.40E-5 | 0.90E-5 | 0.30E-5 | 3.5E-3 | 6.3E-3 | 6.6E-3 |\\n| 0.06 | 1.40E-5 | 0.90E-5 | 0.30E-5 | 4.9E-3 | 6.3E-3 | 6.6E-3 |\\n| 0.08 | 2.30E-5 | 0.90E-5 | 0.30E-5 | 5.4E-3 | 6.3E-3 | 6.6E-3 |\\n| 0.10 | 3.10E-5 | 0.90E-5 | 0.30E-5 | 5.8E-3 | 6.3E-3 | 6.6E-3 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | TMA-1mm (mol/m³) | TMA-1.5mm (mol/m³) | TMA-2mm (mol/m³) | Water-1mm (mol/m³) | Water-1.5mm (mol/m³) | Water-2mm (mol/m³) |\\n|---|---|---|---|---|---|---|\\n| 0.00 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 0.01 | 0.10E-3 | 0.80E-3 | 2.0E-3 | 0.00 | 0.50E-4 | 1.0E-4 |\\n| 0.02 | 0.20E-3 | 2.20E-3 | 3.8E-3 | 0.10E-4 | 1.20E-4 | 1.5E-4 |\\n| 0.03 | 0.30E-3 | 3.20E-3 | 3.9E-3 | 0.30E-4 | 1.80E-4 | 1.5E-4 |\\n| 0.04 | 0.50E-3 | 3.60E-3 | 4.0E-3 | 0.80E-4 | 2.00E-4 | 1.5E-4 |\\n| 0.06 | 1.00E-3 | 3.60E-3 | 4.0E-3 | 2.20E-4 | 2.00E-4 | 1.5E-4 |\\n| 0.08 | 1.60E-3 | 3.60E-3 | 4.0E-3 | 3.60E-4 | 2.00E-4 | 1.5E-4 |\\n| 0.10 | 2.10E-3 | 3.60E-3 | 4.0E-3 | 4.60E-4 | 2.00E-4 | 1.5E-4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 1 mm gap produces the highest intermixing levels at both monitoring positions. This occurs because the narrow gap restricts convective gas flow, making mass transport dominated by diffusion. In the high vacuum system (0.22 torr), diffused precursor molecules accumulate in the exhaust regions due to insufficient convective forces to purge them, resulting in higher foreign precursor concentrations compared to larger gaps where convection is more effective.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In (a), water is the home precursor at position B so its concentration is high (10⁻³ to 10⁻² mol/m³). In (b), water is the foreign precursor at position C, so only small amounts from intermixing are detected (10⁻⁴ mol/m³ scale).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Position B is located at the water side (under the exhaust between water and nitrogen zones) and position C is at the TMA side (under the exhaust between nitrogen and TMA zones), used to monitor precursor concentrations and intermixing.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Intermixing is more severe at the TMA side, with a relative intermixing ratio of approximately 1:4 (water to TMA), compared to weaker intermixing at the water side, due to water's higher inlet vapor pressure driving stronger diffusion.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_20_fig_5.jpg","caption":"Fig. 5. The effects of relative pumping pressure (0, 0.05, to 0.1 torr) on the precursor intermixing with gap size and wafer temperature fixed at $1.5 \\mathrm{mm}$ and $200^{\\circ}$ C: (a) TMA and water concentration in $\\mathrm{mol} / \\mathrm{m}^3$ at water side (position B), and (b) at TMA side (position C). The simulation time is $0.04 \\mathrm{s}$ with $1.5 \\mathrm{mm}$ gap size.","id":"test/atomic-layer-deposition/simulation-usecase/20/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/20/fig_5","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/Dongqing Pan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":664,"height":927,"image_format":"jpeg","image_sha256":"36472c4f018898160688a256d176f0122d1dcd00d393ecafa3125c5c932b672e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":5,"width":659,"height":463},{"panel_id":"b","x":0,"y":472,"width":665,"height":452}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"TMA and water concentrations at position B (water side) over time for three relative pumping pressures (0, 0.05, 0.1 torr above base pressure). Higher pumping pressure results in higher TMA intermixing, with 0.1 torr yielding approximately 2.2×10⁻⁵ mol/m³ TMA compared to less than 1×10⁻⁵ mol/m³ at 0 torr. Water (home precursor) shows similar steady state levels across all pressures.\"},{\"panel_id\":\"b\",\"text\":\"TMA and water concentrations at position C (TMA side) over time for three relative pumping pressures. Higher pumping pressure increases water intermixing, with steady state water concentration approximately doubling from 2×10⁻⁴ mol/m³ at 0 torr to 5×10⁻⁴ mol/m³ at 0.1 torr. TMA (home precursor) reaches similar levels across all pressures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | TMA-0 torr (mol/m³) | TMA-0.05 torr (mol/m³) | TMA-0.1 torr (mol/m³) | Water-0 torr (mol/m³) | Water-0.05 torr (mol/m³) | Water-0.1 torr (mol/m³) |\\n|---|---|---|---|---|---|---|\\n| 0.000 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 0.005 | 0.00 | 0.00 | 0.00 | 2.5E-3 | 3.2E-3 | 4.0E-3 |\\n| 0.010 | 0.10E-5 | 0.20E-5 | 0.20E-5 | 4.8E-3 | 5.5E-3 | 6.2E-3 |\\n| 0.020 | 0.50E-5 | 0.80E-5 | 0.85E-5 | 6.1E-3 | 6.4E-3 | 6.7E-3 |\\n| 0.030 | 0.80E-5 | 1.40E-5 | 1.60E-5 | 6.3E-3 | 6.5E-3 | 6.8E-3 |\\n| 0.040 | 0.95E-5 | 1.70E-5 | 2.20E-5 | 6.3E-3 | 6.5E-3 | 6.9E-3 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | TMA-0 torr (mol/m³) | TMA-0.05 torr (mol/m³) | TMA-0.1 torr (mol/m³) | Water-0 torr (mol/m³) | Water-0.05 torr (mol/m³) | Water-0.1 torr (mol/m³) |\\n|---|---|---|---|---|---|---|\\n| 0.000 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 0.010 | 0.80E-3 | 1.00E-3 | 1.20E-3 | 0.50E-4 | 0.80E-4 | 1.20E-4 |\\n| 0.020 | 2.40E-3 | 2.70E-3 | 2.90E-3 | 1.90E-4 | 2.60E-4 | 3.50E-4 |\\n| 0.030 | 3.20E-3 | 3.60E-3 | 3.70E-3 | 2.00E-4 | 3.00E-4 | 4.90E-4 |\\n| 0.040 | 3.60E-3 | 4.10E-3 | 4.30E-3 | 2.10E-4 | 3.10E-4 | 5.30E-4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It means the pumping pressure equals the base vacuum pressure of 0.22 torr, representing the ideal pumping condition with maximum pressure difference driving convective flow.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 0 torr relative pumping pressure (equal to the base pressure of 0.22 torr) minimizes intermixing, as it maintains the maximum pressure gradient for effective convective gas removal.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The home precursor is continuously supplied directly above each monitoring position, maintaining its concentration regardless of pumping efficiency, while foreign precursor levels depend on how effectively the exhaust system prevents cross-contamination through convective purging.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Higher relative pumping pressure increases precursor intermixing at both monitoring positions. At the water side (a), TMA concentration roughly doubles from 0 torr to 0.1 torr. At the TMA side (b), water concentration increases from approximately 2×10⁻⁴ to 5×10⁻⁴ mol/m³. This occurs because higher pumping pressure reduces the pressure difference between inlets and outlets, weakening convective mass transport and allowing more diffusive mixing of precursors.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_3_fig_6.jpg","caption":"FIG. 6. (Color online) Correlations of surface deposition rate of $\\mathrm{O(s)}$ and TMA molar fraction with coverage of $\\mathrm{^*Al(CH_3)_2(s)}$ for TMA pulsing step at 100, 150, 200, and $250^{\\circ}\\mathrm{C}$ , respectively. The gray dotted lines show the temperature effect on surface deposition. Surface deposition rate of $\\mathrm{O(s)}$ in mass per area per second is achieved by substituting Eq. (14) into Eq. (10).","id":"test/atomic-layer-deposition/simulation-usecase/3/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/3/fig_6","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"multi-axis chart"},{"panel_id":"d","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/Dongqing Pan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":988,"height":514,"image_format":"jpeg","image_sha256":"96e01756219cc7d940d0d30e5c06f64d56e37f1df6bf7ae43c71a60b6aba3ae7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":327,"height":508},{"panel_id":"b","x":323,"y":1,"width":218,"height":512},{"panel_id":"c","x":524,"y":1,"width":211,"height":497},{"panel_id":"d","x":721,"y":1,"width":264,"height":505}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"TMA pulse at 100°C: Correlates surface deposition rate of O⟨s⟩ (red), TMA mole fraction (black), and *Al(CH₃)₂ surface coverage (blue). Deposition rate peaks around 5 ms then drops as surface coverage saturates to 50%, despite continued TMA concentration increase.\"},{\"panel_id\":\"b\",\"text\":\"TMA pulse at 150°C: Faster surface saturation than 100°C, with peak deposition occurring earlier. The dotted line at t=0.004s shows temperature comparison across panels.\"},{\"panel_id\":\"c\",\"text\":\"TMA pulse at 200°C: Surface saturation occurs even earlier. Peak deposition rate remains similar but is reached more quickly.\"},{\"panel_id\":\"d\",\"text\":\"TMA pulse at 250°C: Fastest saturation; surface coverage reaches 50% before 0.004s. At this point, deposition rate at 250°C is slightly lower than 200°C because surface is already saturated.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Flow time (ms) | Surface Deposition Rate of O ( kg/m2-s ) | *Al(Me)2 Surface Coverage | TMA Mole Fraction |\\n|---|---|---|---|\\n| 2 | 0.15e-04 | 0.10 | 0.00 |\\n| 3 | 0.60e-04 | 0.30 | 0.01 |\\n| 4 | 1.65e-04 | 0.50 | 0.05 |\\n| 5 | 0.10e-04 | 0.50 | 0.18 |\\n| 6 | 0.01e-04 | 0.50 | 0.30 |\\n| 8 | 0.00 | 0.50 | 0.50 |\\n| 10 | 0.00 | 0.50 | 0.65 |\\n| 12 | 0.00 | 0.50 | 0.75 |\\n| 14 | 0.00 | 0.50 | 0.80 |\\n| 20 | 0.00 | 0.50 | 0.90 |\"},{\"panel_id\":\"b\",\"text\":\"| Flow time (ms) | Surface Deposition Rate of O ( kg/m2-s ) | *Al(Me)2 Surface Coverage | TMA Mole Fraction |\\n|---|---|---|---|\\n| 2 | 0.05e-04 | 0.00 | 0.00 |\\n| 3 | 0.35e-04 | 0.10 | 0.02 |\\n| 4 | 1.05e-04 | 0.35 | 0.05 |\\n| 5 | 1.65e-04 | 0.50 | 0.15 |\\n| 6 | 0.10e-04 | 0.50 | 0.30 |\\n| 8 | 0.00 | 0.50 | 0.55 |\\n| 10 | 0.00 | 0.50 | 0.70 |\\n| 12 | 0.00 | 0.50 | 0.80 |\\n| 20 | 0.00 | 0.50 | 0.95 |\"},{\"panel_id\":\"c\",\"text\":\"| Flow time (ms) | Surface Deposition Rate of O ( kg/m2-s ) | *Al(Me)2 Surface Coverage | TMA Mole Fraction |\\n|---|---|---|---|\\n| 2 | 0.05e-04 | 0.00 | 0.00 |\\n| 3 | 0.55e-04 | 0.15 | 0.02 |\\n| 4 | 1.70e-04 | 0.50 | 0.10 |\\n| 5 | 0.15e-04 | 0.50 | 0.25 |\\n| 6 | 0.00 | 0.50 | 0.45 |\\n| 8 | 0.00 | 0.50 | 0.70 |\\n| 10 | 0.00 | 0.50 | 0.82 |\\n| 12 | 0.00 | 0.50 | 0.90 |\\n| 20 | 0.00 | 0.50 | 0.98 |\"},{\"panel_id\":\"d\",\"text\":\"| Flow time (ms) | Surface Deposition Rate of O ( kg/m2-s ) | *Al(Me)2 Surface Coverage | TMA Mole Fraction |\\n|---|---|---|---|\\n| 2 | 0.05e-04 | 0.00 | 0.00 |\\n| 3 | 0.75e-04 | 0.20 | 0.05 |\\n| 4 | 1.55e-04 | 0.50 | 0.25 |\\n| 5 | 0.10e-04 | 0.50 | 0.45 |\\n| 6 | 0.00 | 0.50 | 0.60 |\\n| 8 | 0.00 | 0.50 | 0.82 |\\n| 10 | 0.00 | 0.50 | 0.90 |\\n| 12 | 0.00 | 0.50 | 0.95 |\\n| 20 | 0.00 | 0.50 | 0.98 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The deposition rate drops drastically once surface coverage saturates at 50% (the other half is occupied by *AlCH₃). Even though TMA concentration continues to increase, no further deposition occurs because all reactive *OH surface sites have been consumed. This demonstrates the self-limiting nature of ALD.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Red circles (left axis): mass deposition rate of bulk oxygen species O⟨s⟩; black squares (right axis): TMA gas-phase mole fraction; blue diamonds (right axis): *Al(CH₃)₂ surface species coverage.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The peak deposition rate values are nearly identical (~1.6×10⁻⁴ kg/m²·s) across all four temperatures; only the time to reach the peak changes.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher temperature accelerates saturation. The dotted lines show saturation is reached at approximately t=0.004s for 100°C but progressively earlier at higher temperatures, with 250°C saturating fastest.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_3_fig_7.jpg","caption":"FIG. 7. (Color online) Relation of surface deposition rate of $\\mathrm{Al}(\\mathrm{s})$ , $\\mathrm{H}_2\\mathrm{O}$ molar fraction and coverage of species $\\mathrm{^*OH}$ for water pulsing step at 100, 150, 200, and $250^{\\circ}\\mathrm{C}$ , respectively. The gray dotted lines show the process temperature effect on surface deposition. Surface deposition rate of $\\mathrm{Al}(\\mathrm{s})$ in mass per area per second is achieved by substituting Eq. (14) into Eq. (10).","id":"test/atomic-layer-deposition/simulation-usecase/3/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/3/fig_7","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"multi-axis chart"},{"panel_id":"d","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/Dongqing Pan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":947,"height":492,"image_format":"jpeg","image_sha256":"fa7b1cc0918b8037c4d60a9cf98c422769f74ddec076d25bb788a64be3272e42","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":3,"width":312,"height":485},{"panel_id":"b","x":297,"y":7,"width":215,"height":486},{"panel_id":"c","x":496,"y":2,"width":204,"height":476},{"panel_id":"d","x":699,"y":0,"width":246,"height":493}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Water pulse at 100°C: Shows surface deposition rate of Al⟨s⟩ (red), H₂O mole fraction (black), and *OH surface coverage (purple). Deposition rate peaks then declines as *OH coverage saturates to ~100%.\"},{\"panel_id\":\"b\",\"text\":\"Water pulse at 150°C: Faster *OH saturation than 100°C. Peak deposition rate is slightly higher and reached earlier.\"},{\"panel_id\":\"c\",\"text\":\"Water pulse at 200°C: Surface saturates around t=0.003s. Deposition becomes hindered once *OH fully covers the surface.\"},{\"panel_id\":\"d\",\"text\":\"Water pulse at 250°C: Fastest saturation with highest peak deposition rate. However, after ~0.003s, deposition rate at 250°C falls below that at 200°C because reactive *Al(CH₃)₂ and *AlCH₃ sites are consumed more quickly.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Flow time (ms) | Surface Deposition Rate ( kg/m2-s ) | *OH Surface Coverage | H2O Mole Fraction |\\n|---|---|---|---|\\n| 1 | 0.55e-04 | 0.15 | 0.02 |\\n| 2 | 1.05e-04 | 0.70 | 0.05 |\\n| 3 | 0.45e-04 | 0.92 | 0.20 |\\n| 4 | 0.15e-04 | 0.98 | 0.55 |\\n| 5 | 0.02e-04 | 1.00 | 0.85 |\\n| 6 | 0.00 | 1.00 | 0.95 |\\n| 7 | 0.00 | 1.00 | 1.00 |\"},{\"panel_id\":\"b\",\"text\":\"| Flow time (ms) | Surface Deposition Rate ( kg/m2-s ) | *OH Surface Coverage | H2O Mole Fraction |\\n|---|---|---|---|\\n| 1 | 0.70e-04 | 0.35 | 0.02 |\\n| 2 | 1.15e-04 | 0.90 | 0.10 |\\n| 3 | 0.35e-04 | 0.99 | 0.38 |\\n| 4 | 0.05e-04 | 1.00 | 0.78 |\\n| 5 | 0.00 | 1.00 | 0.95 |\\n| 6 | 0.00 | 1.00 | 1.00 |\"},{\"panel_id\":\"c\",\"text\":\"| Flow time (ms) | Surface Deposition Rate ( kg/m2-s ) | *OH Surface Coverage | H2O Mole Fraction |\\n|---|---|---|---|\\n| 1 | 0.85e-04 | 0.55 | 0.02 |\\n| 2 | 1.20e-04 | 0.95 | 0.20 |\\n| 3 | 0.25e-04 | 1.00 | 0.60 |\\n| 4 | 0.02e-04 | 1.00 | 0.90 |\\n| 5 | 0.00 | 1.00 | 0.98 |\\n| 6 | 0.00 | 1.00 | 1.00 |\"},{\"panel_id\":\"d\",\"text\":\"| Flow time (ms) | Surface Deposition Rate ( kg/m2-s ) | *OH Surface Coverage | H2O Mole Fraction |\\n|---|---|---|---|\\n| 1 | 1.30e-04 | 0.50 | 0.05 |\\n| 2 | 0.40e-04 | 0.95 | 0.30 |\\n| 3 | 0.05e-04 | 1.00 | 0.80 |\\n| 4 | 0.00 | 1.00 | 0.98 |\\n| 5 | 0.00 | 1.00 | 1.00 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The water pulse shows more complex temperature behavior. While higher temperature initially increases deposition rate (similar to TMA), after about 0.003s the deposition at higher temperatures becomes hindered. At 250°C, *OH saturates so quickly that the deposition rate drops below that at 200°C. This contrasts with TMA pulse where peak rates were temperature-independent.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. Higher temperature increases the peak rate and accelerates saturation, but after ~0.003s the deposition rate at 250°C falls below that at 200°C due to faster consumption of reactive surface sites.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"*OH (hydroxyl groups), which serve as reactive sites for the subsequent TMA pulse.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Once *OH fully covers the surface, all reactive *Al(CH₃)₂ and *AlCH₃ sites from the TMA pulse have been consumed, so no further reaction can occur.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_46_fig_4.jpg","caption":"Fig. 4. Adsorption energy and reaction energy barrier as a function of the number of DMA ligands. The effect of temperature is considered for the adsorption energy.","id":"test/atomic-layer-deposition/simulation-usecase/46/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/46/fig_4","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/Yong-Chan Jeong et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":578,"height":611,"image_format":"jpeg","image_sha256":"6f3d535d464e71a9f9a661e68e687d85f03108f436c840dbd195e36f4263d241","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":578,"height":611}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows how adsorption energy and reaction energy barrier change with the number of dimethylamino ligands. Adsorption strength increases monotonically, while reaction barriers show a parabolic trend, highlighting an optimal ligand range balancing stability and reactivity.\"},{\"panel_id\":\"b\",\"text\":\"Entropy-corrected adsorption energies at 600 K are presented, showing a downward shift in adsorption energies under ALD conditions and a narrower window of viable precursors, explaining the preference for intermediate ligand numbers.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of dimethylamino ligands | Adsorption energy (eV) | Reaction energy barrier (eV) |\\n|---|---|---|\\n| 0 (Silane) | 0.16 | 1.42 |\\n| 1 (DMAS) | 0.59 | 0.65 |\\n| 2 (BDMAS) | 0.69 | 0.28 |\\n| 3 (TDMAS) | 0.74 | 0.75 |\\n| 4 (TeDMAS) | 0.84 | 1.81 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure identifies an optimal ligand-number window where adsorption energy is sufficient to prevent desorption while reaction barriers remain low enough for efficient surface chemistry under ALD conditions. By incorporating temperature effects and defining an acceptable adsorption-energy range, the analysis explains why precursors with intermediate DMA ligand numbers exhibit superior ALD performance.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Adsorption energy increases monotonically, while the reaction energy barrier decreases up to two DMA ligands and then increases, forming a parabolic trend.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Number of dimethylamino ligands bonded to Si, Strength of N···H–OH interactions, Steric crowding around the Si center, Ligand-induced strain at the transition state, Entropy loss upon adsorption at elevated temperature\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_46_fig_5.jpg","caption":"Fig. 5. Variation of bond lengths as a function of the number of DMA ligands. $\\sum d_{\\mathrm{Si - Si}}$ indicates the sum of the variation of the Si-Si bond lengths near the reaction site on the surface and $\\sum d_{\\mathrm{Si - L}}$ indicates the sum of the variation of the Si-ligand bond lengths in the Si precursors.","id":"test/atomic-layer-deposition/simulation-usecase/46/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/46/fig_5","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/Yong-Chan Jeong et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":539,"height":400,"image_format":"jpeg","image_sha256":"9352ee35fe850f27925e22d69e10245878e4abb8698e01d40ec05bd5bc88c675","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":539,"height":400}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_27_fig_2.jpg","caption":"Fig. 2. The etch depth per cycle $(\\mathrm{A / cycle})$ of $\\mathrm{Al}_2\\mathrm{O}_3$ and the rms roughness of the etched $\\mathrm{Al}_2\\mathrm{O}_3$ surface measured as a function of $\\mathrm{BCl}_3$ gas flow rate from 0 to 100 sccm at 1st grid voltage of $100\\mathrm{V}$ for the $\\mathrm{Ar}^+$ ion beam in the 3rd desorption step.","id":"test/atomic-layer-etching/experimental-usecase/27/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/27/fig_2","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/Atomic layer etching of Al2O3 using BCl3Ar.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":677,"height":433,"image_format":"jpeg","image_sha256":"a20ca862c491e69ea6c37bdce595348004699d9c351939c8a3bf724f36492669","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":1,"width":672,"height":432}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between gas flow rate and etch rate and surface roughness. As the gas flow rate increases, the etch rate increases while the surface roughness decreases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gas Flow Rate (sccm) | Etch Rate (Å / cycle) | Surface Roughness (Å) |\\n|---|---|---|\\n| 0 | 0.10 | 5.0 |\\n| 25 | 0.80 | 7.0 |\\n| 50 | 0.85 | 5.0 |\\n| 75 | 1.00 | |\\n| 100 | 1.00 | 4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"100 V.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.0 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 7.0 Å.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the sccm increases, so too does the etch rate, until it reaches a value of 1.0 Å/cycle at 75 sccm. In this range, the surface roughness first increases until 25 sccm, after which it decreases. Below 75 sccm, the surface is only partially covered, which leads to partial etching. This partial etching is the cause of the increased roughness. At full surface coverage, one monolayer is etched per cycle, which leads to values of roughness comparable to the reference.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_27_fig_3.jpg","caption":"Fig. 3. The etch depth $(\\mathrm{\\AA})$ , etch depth per cycle $(\\mathrm{\\AA / cycle})$ of $\\mathrm{Al}_2\\mathrm{O}_3$ , and the rms roughness of the etched $\\mathrm{Al}_2\\mathrm{O}_3$ surface measured as a function of the number of ALET etch cycles at $\\mathrm{BCl}_3$ gas flow rate of $100~\\mathrm{sccm}$ during the 1st adsorption step and at 1st grid voltage of $100\\mathrm{V}$ during the 3rd desorption step as the $\\mathrm{Al}_2\\mathrm{O}_3$ ALET condition.","id":"test/atomic-layer-etching/experimental-usecase/27/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/27/fig_3","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/Atomic layer etching of Al2O3 using BCl3Ar.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":806,"height":450,"image_format":"jpeg","image_sha256":"aab78399d7e1505cbc68d1aa23b5763a7aa1ce49c8448b7918522f30c45d7b0e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":2,"width":799,"height":447}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between etch depth, etch rate, and surface roughness against the number of ALET cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of ALET Cycles | Etch Depth (Å) | Etch Rate (Å/cycles) | Surface Roughness (Å) |\\n|---|---|---|---|\\n| 50 | 50 | 1.00 | 4.0 |\\n| 100 | 100 | 1.00 | |\\n| 150 | 150 | 1.10 | 4.5 |\\n| 250 | 260 | 1.10 | 5.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"250.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 220 Å.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch rate remained practically constant at 1.0 Å/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The surface roughness only changed slightly from 4.0 to 5.0 Å over 250 ALET cycles.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_3_figure_2.jpg","caption":"Figure 2. (a) Change of the $\\mathrm{S / Mo}$ ratio and the relative Cl atomic percentage on the $\\mathrm{MoS}_2$ surface that was measured as a function of the $\\mathrm{Ar^{+}}$ -ion exposure time (15-200 s) using XPS during the desorption step of $\\mathrm{MoS}_2$ ALE for the bilayer $\\mathrm{MoS}_2$ b) Change of the $\\mathrm{S / Mo}$ ratio and the relative Cl atomic percentage on the $\\mathrm{MoS}_2$ surface that was measured as a function of the $\\mathrm{Ar^{+}}$ -ion exposure time up to $30~\\mathrm{s},$ similar to (a).A further exposure to the $\\mathrm{Ar^{+}}$ ion of $200~\\mathrm{s}$ was performed after the annealing TA); after $30~\\mathrm{s}$ of $\\mathrm{Ar^{+}}$ ion exposure time (at $30~\\mathrm{s},$ it appeared that the top S of the $\\mathrm{MoS}_2$ had been removed), a further $\\mathrm{Ar^{+}}$ ion desorption was carried out after the $\\mathrm{MoS}_2$ sample was annealed at $250^{\\circ}C$ for $45\\mathrm{min}$ in a vacuum to remove the Cl radical on the $\\mathrm{MoS}_2$ surface. The experiment was repeated seven times, and the data were averaged. P indicates the pristine $\\mathrm{MoS}_2$ state, and Cl represents $\\mathrm{MoS}_2$ after Cl-radical adsorption.","id":"test/atomic-layer-etching/experimental-usecase/3/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/3/figure_2","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/Atomic Layer Etching Mechanism of MoS2 for Nanodevices.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":675,"height":970,"image_format":"jpeg","image_sha256":"eb16ed660bbdc55d62009e193b300704f69ea9a2a72ad7ff73cb90fa7582068d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":668,"height":479},{"panel_id":"b","x":2,"y":493,"width":667,"height":475}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relative atomic percentage of chlorine (Cl at %) and the ratio of sulfur to molybdenum (S/Mo) against exposure time in seconds. The data points are labeled with 'Sulfur removed' and 'Molybdenum removed' indicating specific conditions, to explain the trends in the ratio of S/Mo.\"},{\"panel_id\":\"b\",\"text\":\"The chart shows the relative atomic percentage of chlorine (Cl at %) and the ratio of sulfur to molybdenum (S/Mo) against exposure time in seconds. A red arrow indicates 'Annealing (250°C, 45min)' s.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Exposure time (sec) | P | Cl | 15 | 30 | 45 | 60 | 90 | 120 | 200 |\\n|---|---|---|---|---|---|---|---|---|---|\\n| Relative atomic percentage (%) | 0 | 60 | 45 | 30 | 20 | 10 | 5 | 0 | 0 |\\n| Ratio of S/Mo | 2.0 | 2.0 | 1.8 | 1.65 | 1.9 | 2.3 | 2.2 | 2.0 | 2.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Exposure time (sec) | P | Cl | 15 | 30 | TA | 60 | 90 | 120 | 200 |\\n|---|---|---|---|---|---|---|---|---|---|\\n| Relative atomic percentage (%) | 0 | 60 | 45 | 30 | 0 | 0 | 0 | 0 | 0 |\\n| Ratio of S/Mo | 2.0 | 2.0 | 1.8 | 1.7 | 1.7 | 1.7 | 1.7 | 1.7 | 1.7 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ideal ratio is 2.0, as the oxidation state of Mo is +4 and that of sulfer is -2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"120 s.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, this will not happen as the annealing fixes the S/Mo ratio 1.7, which should be 2.0 for high quality MoS2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Argon ions bombard the surface and remove Cl from the surface together with sulfur.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_41_fig_5.jpg","caption":"FIG. 5. Thickness of $\\text{TiO}_2$ and EPC for ten cycles of TiN during the oxidation step as (a) a function of temperature, with a constant RF power of 15 W and (b) a function of RF power, with a constant temperature of $100^{\\circ}C$ The standard process conditions for the oxidation step used $O_2$ at 5 SCCM, 0.05 Torr, $100^{\\circ}C$ and 15 W, and the fluorination step used $\\mathbb{CF}_4$ at 2 SCCM, 0.03 Torr, $100^{\\circ}C$ and 15 W. At the removal step, the temperature was increased to $150^{\\circ}C$ with an Ar of 50 SCCM for 30 s without RF power.","id":"test/atomic-layer-etching/experimental-usecase/41/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/41/fig_5","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/Plasma atomic layer etching for titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":1253,"height":431,"image_format":"jpeg","image_sha256":"bef7d5d7337b157fc0bb6c13f0acab97e56786e14593f945ada42b1673531e4b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":53,"y":10,"width":570,"height":420},{"panel_id":"b","x":693,"y":10,"width":558,"height":420}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure plots estimated TiO₂ thickness and etch per cycle (EPC) of TiN versus oxidation temperature at 15 W RF power. Both quantities increase with temperature, showing that stronger oxidation produces thicker TiO₂ and higher EPC.\"},{\"panel_id\":\"b\",\"text\":\"The subfigure plots estimated TiO₂ thickness and EPC versus RF power at 100 °C. Increasing RF power leads to larger TiO₂ thickness and EPC, indicating a close correlation between oxide growth and etch-per-cycle performance.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Estimated TiO₂ thickness (nm) | TiN Etch per cycle (nm/cycle) |\\n|------------------|-------------------------------|---------------------------|\\n| 50 | 0.30 | 0.25 |\\n| 100 | 0.50 | 0.45 |\\n| 150 | 0.80 | 0.75 |\\n| 200 | 1.20 | 1.10 |\"},{\"panel_id\":\"b\",\"text\":\"| RF power (W) | Estimated TiO₂ thickness (nm) | TiN Etch per cycle (nm/cycle) |\\n|--------------|-------------------------------|---------------------------|\\n| 10 | 0.25 | 0.25 |\\n| 15 | 0.50 | 0.50 |\\n| 25 | 0.90 | 0.85 |\\n| 50 | 1.95 | 1.75 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In (a), both quantities rise with temperature: TiO₂ thickness increases from ~0.30 nm (50 °C) to ~1.2–1.25 nm (200 °C), and EPC increases from ~0.25 to ~1.1 nm/cycle. The two curves follow similar upward trends, indicating a strong positive association between oxide growth and EPC under the tested oxidation conditions\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 200 °C.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The EPC of TiN increases steadily with RF power(approximately ~0.2–0.25 at 10 W up to ~1.7–1.8 nm/cycle at 50 W).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. EPC is consistently slightly below (or very close to) the TiO₂ thickness at each power setting.\"}]}]"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_10.jpg","caption":"Figure 10. Electrical properties of low-temperature $\\mathrm{Al}_2\\mathrm{O}_3$ ALD films grown using 300 reaction cycles on $n\\mathrm{-Si}(100)$ .","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_10","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_10","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the relationship between growth temperature and two properties: dielectric constant and breakdown field. The breakdown field shows a slight increase with increasing temperature, while the electric constant shows no correlation with temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Growth Temperature (°C) | Dielectric Constant, k | Breakdown Field (MV/cm) |\\n|---|---|---|\\n| 33 | 7.5 | 3.7 |\\n| 58 | 8.2 | 4.0 |\\n| 80 | 7.2 | 4.5 |\\n| 102 | 7.8 | 4.1 |\\n| 125 | 8.4 ; 7.5 | 4.2 |\\n| 177 | 7.5 | 4.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There is no correlation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There is a slight positive correlation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Breakdown field.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The higher growth temperature range appears to produce the most electrically robust films, as the breakdown field increases with growth temperatures, while the dielectric constant remains stable. The breakdown field indicates the maximum electric field the film can withstand before electrical failure. Therefore, a higher breakdown field means the film is more resistant to damage under high voltage.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":594,"height":369}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":594,"height":369,"image_format":"jpeg","image_sha256":"227558bd79c3fc3088fb044d68717638423f2ca35b388613701b5314cc1cc540","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_11.jpg","caption":"Figure 11. O/Al ratio and H concentrations for $\\mathrm{Al}_2\\mathrm{O}_3$ ALD films as determined by RBS and FRS versus growth temperatures from 33 to $177^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_11","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_11","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between growth temperature and two variables: hydrogen content (in at.%) and oxygen-to-aluminum atom ratio (O/Al). Hydrogen content shows a negative correlation with growth temperature, and the O/Al ratio shows no correlation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Growth Temperature (°C) | H (atom %) | O/Al atom ratio |\\n|---|---|---|\\n| 32 | 21,86 | 1,66 |\\n| 57 | 19,37 | 1,29 |\\n| 79 | 15,99 | 1,41 |\\n| 101 | 14,51 | 1,37 |\\n| 124 | 10,80 | 1,36 |\\n| 177 | 7,09 | 1,42 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There is a negative correlation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There is no correlation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ 1.34 to 1.70.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The O/Al ratio in the measured film is closest to that at 177 °C. The O/Al ratio in stoichiometric Al₂O₃ is 1.5. At 177 °C, the measured O/Al ratio of 1.42 is closer to 1.5 than the values at lower temperatures.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":550,"height":358}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":550,"height":358,"image_format":"jpeg","image_sha256":"a1671b7230d391ca3fa05f76d146eaf70ddbb5bfa5e3c5121becf2184cf54ed8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_5.jpg","caption":"FIG. 5. (Color online) Ion-surface interactions during plasma processes with respect to ion flux and ion energy (Ref. 345). The typical operating windows for remote plasma ALD and other plasma-based processes are indicated. Reprinted with permission from T. Tagaki, J. Vac. Sci. Technol. A 2, 382 (1984). Copyright 1984 American Vacuum Society.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_5","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The auto summary accurately identifies that the chart relates ion flux density and ion energy and mentions key processes like film deposition, plasma chemistry, and ALD. However, it could be improved by noting that the axes are logarithmic, which affects the interpretation of spatial relationships between regions. It also does not mention the conceptual groupings (e.g., adatom migration, sputtering, implantation) marked across the top of the plot, which provide additional mechanistic context.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Process | Ion Energy Range (eV) | Ion Flux Density Range (cm⁻²s⁻¹) |\\n|-------------------|------------------------|----------------------------------|\\n| ALD | 1 – 10 | 10⁹ – 10¹² |\\n| Plasma Chemistry | 1 – 10³ | 10⁹ – 10¹⁵ |\\n| Film Deposition | 1 – 10⁴ | 10⁹ – 10¹⁸ |\\n| Etching | 10 – 10⁴ | 10¹¹ – 10¹⁷ |\\n| Implantation | 10² – 10⁵ | 10¹⁴ – 10¹⁷ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It maps typical ion energy and flux conditions for processes like ALD, etching, and implantation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Atomic layer deposition (ALD) occurs in a region of low ion energy and moderate-to-low ion flux, reflecting its surface-limited, gentle chemistry. In contrast, processes like implantation and etching require higher ion energies and, in the case of implantation, significantly higher flux densities. This demonstrates that ALD is well-suited for precise, conformal coatings where minimal ion damage is critical.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Adatom migration, Desorption, Sticking, Lattice displacement, Sputtering, Implantation\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":680,"height":516}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":680,"height":516,"image_format":"jpeg","image_sha256":"73fa4a81dfb3b2e442d0055e98bd66601a24b22a355ff6ca9942244a8a6cd7e2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_19_fig_6.jpg","caption":"Fig. 6 Selected representative capacitance-voltage and dissipation-voltage curves of $\\mathrm{ZrO_2}$ thin films deposited from $(\\mathrm{CpMe})_2\\mathrm{ZrMe}_2$ at $350^{\\circ}\\mathrm{C}$ (upper panel) and $(\\mathrm{CpMe})_2\\mathrm{Zr(OMe)Me}$ at $300^{\\circ}\\mathrm{C}$ (lower panel).","id":"test/atomic-layer-deposition/experimental-usecase/19/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/19/fig_6","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows Capacitance–Voltage (C–V) and Dissipation–Voltage (D–V) curves for a ZrO₂ thin film (thickness: 13.1 nm) deposited using the (CpMe)₂ZrMe₂/O₃ process. Measurements were performed at three frequencies: 100 kHz, 500 kHz, and 1 MHz. The capacitance is high under negative bias (accumulation), decreases sharply near 0 V (depletion), and saturates at a lower value under positive bias (inversion), which is characteristic of a metal–oxide–semiconductor (MOS) structure.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows Capacitance–Voltage (C–V) and Dissipation–Voltage (D–V) curves for a ZrO₂ thin film (thickness: 11.9 nm) deposited using the (CpMe)₂Zr(OMe)Me₂/O₃ process. Measurements were performed at three frequencies: 100 kHz, 500 kHz, and 1 MHz. The capacitance and dissipation values showed almost similar behavior as the previous label.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Bias voltage, V | C, 100 kHz | C, 500 kHz | C, 1 MHz | D, 100 kHz | D, 500 kHz | D, 1 MHz |\\n|---|---|---|---|---|---|---|\\n|-4 | 1.6e-09 | 1.6e-09 | 1.6e-09 | 0.02 | 0.1 | 0.2 |\\n|-3 | 1.5e-09 | 1.5e-09 | 1.5e-09 | 0.02 | 0.1 | 0.2 |\\n|-2 | 1.0e-09 | 1.0e-09 | 1.0e-09 | 0.01 | 0.0 | 0.1 |\\n|-1.5 | 0.2e-09 | 0.2e-09 | 0.2e-09 | 0.6 | 0.6 | 0.6 |\\n|-1 | 0.1e-09 | 0.1e-09 | 0.1e-09 | 0.0 | 0.0 | 0.0 |\\n| 0 | 0.1e-09 | 0.1e-09 | 0.1e-09 | 0.0 | 0.0 | 0.0 |\\n| 1 | 0.1e-09 | 0.1e-09 | 0.1e-09 | 0.0 | 0.0 | 0.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Bias voltage, V | C, 100 kHz | C, 500 kHz | C, 67, 1 MHz | D, 100 kHz | D, 500 kHz | D, 1 MHz |\\n|---|---|---|---|---|---|---|\\n|-5 | 1.8e-09 | 1.7e-09 | 1.6e-09 | 0.25 | 0.2 | 0.1 |\\n|-4 | 1.6e-09 | 1.5e-09 | 1.4e-09 | 0.1 | 0.2 | 0.1 |\\n|-3 | 1.4e-09 | 1.3e-09 | 1.2e-09 | 0.05 | 0.15 | 0.05 |\\n|-2 | 1.2e-09 | 1.1e-09 | 1.0e-09 | 0.0 | 0.1 | 0.0 |\\n|-1 | 1.0e-09 | 9.0e-10 | 8.0e-10 | 0.8 | 0.8 | 0.8 |\\n| 0 | 2.0e-10 | 2.0e-10 | 2.0e-10 | 0.0 | 0.0 | 0.0 |\\n| 1 | 2.0e-10 | 2.0e-10 | 2.0e-10 | 0.0 | 0.0 | 0.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The \\\"hump\\\" is caused by the charging and discharging of interface trap states (D_it) at the ZrO₂/Si interface. As the DC bias sweeps through the depletion region, the Fermi level aligns with the energy levels of these traps. At lower measurement frequencies, carriers have enough time to respond to the AC signal by filling and emptying these traps, contributing an additional capacitance that appears as a hump. At very high frequencies, this response lags, and the hump diminishes.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 11.9 nm film has a CET of 3.9 nm, while the 13.1 nm film has a CET of 4.3 nm. Although the physical thickness differs by 1.2 nm, the CET only increases by 0.4 nm. This reveals that the dielectric constant (κ) scales effectively, and the thicker film does not proportionally increase the equivalent electrical thickness, which is favorable for device scaling.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It maps directly to the density of interface trap states (D_it) at the ZrO₂/Si interface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both precursors yield films with comparable interface quality, so the decision would not be based on trap density. Selection would instead prioritize other factors like the precursor's thermal stability, growth rate, and compatibility with the thermal budget. The key inference is that either precursor can meet the baseline electrical requirement for gate dielectric applications.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":583,"height":389},{"panel_id":"b","x":9,"y":399,"width":573,"height":372}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/Jaakko Niinisto et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":587,"height":767,"image_format":"jpeg","image_sha256":"18f45877952273869e4098836a0f548ed817d6fb6100ee00a3e8a955661fb51e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_20_fig_5.jpg","caption":"Fig. 5 Average growth per cycle and lithium concentration of LLT films as a function of $\\mathrm{LiO}^{\\prime}\\mathrm{Bu}$ pulse time. The pulsing scheme was $400 \\times (1 \\times \\mathrm{TiO}_{2} + 3 \\times \\mathrm{La}_{2}\\mathrm{O}_{3} + 1 \\times \\mathrm{Li}_{2}\\mathrm{O})$ .","id":"test/atomic-layer-deposition/experimental-usecase/20/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/20/fig_5","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the growth per cycle and lithium concentration in at% as a function of lithium tert-butoxide pulse time at a deposition temperature of 225°C. Both curves show saturation behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Lithium tert-butoxide pulse time (s)' | Growth per cycle (Å/cycle) | Lithium concentration (at.%) |\\n|---|---|---|\\n| 0 | 0.28 | 0.01 |\\n| 2 | 0.37 | 0.08 |\\n| 4 | 0.43 | 0.15 |\\n| 8 | 0.47 | 0.20 |\\n| 12 | 0.48 | 0.21 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After approx. 8 s. pulse time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After approx. 8 s. pulse time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. At 4 seconds, both the growth rate (~0.43 Å/cycle) and lithium concentration (~15 at.%) are still rising steeply and are clearly lower than the values observed at 8 and 12 seconds. This indicates that 4 seconds is insufficient.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":597,"height":392}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/Titta Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":597,"height":392,"image_format":"jpeg","image_sha256":"70328a9e220bed009ac1201ae8f1905ba87b413225083757d0f15bc1f2d00940","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_24_figure_2.jpg","caption":"Figure 2. Film thickness and film uniformity on a $300~\\mathrm{mm}$ wafer for different precursor pulse times. The error bars indicate the minimum and maximum thickness as measured by XRR. The half range is defined as the thickness range divided by two divided by the mean thickness.","id":"test/atomic-layer-deposition/experimental-usecase/24/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/24/figure_2","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the saturation behavior of a Ti-based ALD process on a 300 mm wafer at 280 °C. The mean film thickness remains nearly constant at ~4.8–5.0 nm across pulse times, confirming self-limiting growth, while large error bars at short pulses indicate poor wafer-scale coverage. Uniformity improves from ~9% at 100 ms to below 1% at ~1000 ms, demonstrating that sufficient pulse time is required to achieve uniform deposition over large areas.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ti Precursor Pulse Time (ms) | Value | Parameter |\\n|-----------------------------|-------|-----------|\\n| 0 | | Mean film thickness (nm) |\\n| 0 | | Uniformity (%) |\\n| 100 | 5.17 | Mean film thickness (nm) |\\n| 100 | 8.7 | Uniformity (%) |\\n| 200 | 4.95 | Mean film thickness (nm) |\\n| 200 | 4.91 | Uniformity (%) |\\n| 300 | 4.96 | Mean film thickness (nm) |\\n| 300 | 5.63 | Uniformity (%) |\\n| 400 | 4.89 | Mean film thickness (nm) |\\n| 400 | 7.4 | Uniformity (%) |\\n| 500 | 4.71 | Mean film thickness (nm) |\\n| 500 | 5.36 | Uniformity (%) |\\n| 600 | 4.86 | Mean film thickness (nm) |\\n| 600 | 4.3 | Uniformity (%) |\\n| 700 | 4.78 | Mean film thickness (nm) |\\n| 700 | 2.09 | Uniformity (%) |\\n| 800 | 4.88 | Mean film thickness (nm) |\\n| 800 | 2.32 | Uniformity (%) |\\n| 900 | 4.86 | Mean film thickness (nm) |\\n| 900 | 1.4 | Uniformity (%) |\\n| 1000 | | Mean film thickness (nm) |\\n| 1000 | 0.864 | Uniformity (%) |\\n| 1100 | | Mean film thickness (nm) |\\n| 1100 | 0.66 | Uniformity (%) |\\n| 1200 | | Mean film thickness (nm) |\\n| 1200 | 0.79 | Uniformity (%) |\\n| 1300 | | Mean film thickness (nm) |\\n| 1300 | | Uniformity (%) |\\n| 1400 | | Mean film thickness (nm) |\\n| 1400 | | Uniformity (%) |\\n| 1500 | 4.96 | Mean film thickness (nm) |\\n| 1500 | 1.17 | Uniformity (%) |\\n| 1600 | | Mean film thickness (nm) |\\n| 1600 | | Uniformity (%) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The repeated sequence is: 1) Ti precursor pulse, 2) Purge, 3) Reactant pulse (e.g., H₂O), 4) Purge. A longer precursor pulse allows more time for the precursor to diffuse and fully saturate all reactive sites on the wafer surface, increasing the adsorbed amount per cycle and thus the growth per cycle (GPC) until saturation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both 1000 ms and 1500 ms yield <1% uniformity and ~5 nm thickness. The process result is identical. Trade-off: Operating at 1500 ms is wasteful. The specific cost driver is Precursor consumption and throughput. The extra 500 ms per cycle adds up significantly over thousands of cycles (e.g., adding minutes to the process time) and wastes expensive Titanium precursor that is simply pumped out of the exhaust without reacting, increasing the cost.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Uniformity improves then slightly degrades. At short pulses, precursor depletion across the wafer causes center-to-edge non-uniformity. An intermediate pulse allows full, even saturation (best uniformity). Very long pulses may lead to parasitic CVD or desorption, reintroducing non-uniformity.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The optimal range is just beyond the knee where thickness saturates and uniformity is near its peak (~150-200 ms). This ensures reproducible thickness (controlled GPC) and excellent wafer-scale uniformity, both of which are critical for device performance and yield in integrated circuit manufacturing.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":633,"height":448}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/Martin Rose et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":633,"height":453,"image_format":"jpeg","image_sha256":"4d5ab501d99ee55878a1d0ca03c5789919c4a3d421a8b880531c2b4e5937cebb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_24_figure_3.jpg","caption":"Figure 3. Growth per cycle and film density for substrate temperatures between 235 and $350^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-deposition/experimental-usecase/24/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/24/figure_3","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure represents how substrate temperature affects two key properties in an ALD process: Growth Per Cycle (GPC) increases monotonically with temperature, while Film Density peaks at an optimal temperature (~325°C) before decreasing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Substrate temperature (°C) | Value | Condition |\\n|---------------------------:|------:|-------------------------------|\\n| 225.0 | | Growth per cycle (Å) |\\n| 225.0 | | Film density (g/cm³) |\\n| 233.5 | 0.21 | Growth per cycle (Å) |\\n| 233.5 | 3.89 | Film density (g/cm³) |\\n| 245.31 | 0.20 | Growth per cycle (Å) |\\n| 245.31 | 3.93 | Film density (g/cm³) |\\n| 256.5 | 0.21 | Growth per cycle (Å) |\\n| 256.5 | 3.97 | Film density (g/cm³) |\\n| 268.0 | 0.23 | Growth per cycle (Å) |\\n| 268.0 | 3.99 | Film density (g/cm³) |\\n| 280.0 | 0.23 | Growth per cycle (Å) |\\n| 280.0 | 4.00 | Film density (g/cm³) |\\n| 291.8 | 0.26 | Growth per cycle (Å) |\\n| 291.8 | 4.00 | Film density (g/cm³) |\\n| 324.0 | 0.28 | Growth per cycle (Å) |\\n| 324.0 | 4.18 | Film density (g/cm³) |\\n| 350.0 | 0.50 | Growth per cycle (Å) |\\n| 350.0 | 3.97 | Film density (g/cm³) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The loss of control is signaled by the simultaneous spike in Growth Per Cycle (rising to ~0.5 Å) and the sharp drop in Film Density (falling to <4.0 g/cm³). This divergence typically indicates precursor thermal decomposition (CVD component), where the reaction is no longer limited by surface sites but by the continuous supply of reactant, leading to rapid but porous growth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"325°C is the superior choice. It maximizes the critical density metric for barrier performance. Furthermore, there is no throughput penalty; in fact, the growth rate is higher at 325°C, making it a \\\"win-win\\\" operating point compared to 275°C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increasing thermal energy enhances the surface diffusion of adsorbed species, allowing atoms to settle into thermodynamically favorable, tightly packed lattice positions. This structural ordering reduces voids and efficiently removes bulky ligands, resulting in the continuous densification observed up to the 325°C thermal stability limit.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sharp drop in density at 350°C indicates a porous, defect-rich microstructure likely containing trapped impurities from the decomposed precursor. For a gate dielectric, such defects act as leakage paths and charge traps. Consequently, this film would exhibit high leakage current and poor electrical reliability, failing to insulate the gate effectively despite the manufacturing speed advantage.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":627,"height":432}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/Martin Rose et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":627,"height":437,"image_format":"jpeg","image_sha256":"9942ea09421bab8d082b9699a37d7fb3c6df4a22c3f1b46009bf93d9dd1dc064","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_39_fig_3.jpg","caption":"FIG. 3. (Color online) Growth rate per cycle as measured by SE at deposition temperatures of 70 and $200^{\\circ}\\mathrm{C}$ as a function of the number of successive $\\mathrm{Al}(\\mathrm{CH}_3)_3$ exposures used per ALD cycle. Also the mass gain determined by QCM measurements at $70^{\\circ}\\mathrm{C}$ is given.","id":"test/atomic-layer-deposition/experimental-usecase/39/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/39/fig_3","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the growth rate of SE (angstroms per cycle) at 70 and 200 °C and QCM mass gain (Hz) against the number of Al(CH₃)₃ exposures per cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Al(CH₃)₃ exp. per cycle | SE: Growth rate (Å/cycle) 70 °C |SE: Growth rate (Å/cycle) 200 °C | QCM: Mass gain (Hz) 70 °C |\\n|---|---|---|---|\\n| 1 | 1.2 | 1.0 | 4.25 |\\n| 2 | 1.5 | 1.2 | 5.5 |\\n| 3 | 1.6 | 1.25 | 6.0 |\\n| 4 | 1.7 | | 6.5 |\\n| 6 | 1.7 | | 6.5 |\\n| 8 | | 1.25 | |\\n| 10 | 1.8 | | 6.75 |\\n| 15 | 1.8 | | 6.75 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.27 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.66 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 7 Hz.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At both 70 and 200 °C, the growth rate increases sharply and then plateaus. The final growth rates are 1.8 and 1.27 Å/cycle for 70 and 200 °C, respectively. Saturated growth is observed at both temperatures, which means the process meets the requirements of ALD.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":492}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/Heil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":669,"height":492,"image_format":"jpeg","image_sha256":"12568a1a62639712d12678721fe9d036b0476ce7e0743dc2902fe255dadbf113","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_48_fig_3.jpg","caption":"FIG. 3. (Color online) Real $(\\epsilon_{1})$ and imaginary $(\\epsilon_{2})$ part of the dielectric function as a function of photon energy measured by ex situ SE. The sharp features at a growth temperature of $400^{\\circ}\\mathrm{C}$ indicate the polycrystalline structure of the film. The transition from smooth to sharp dielectric function for films grown at $400^{\\circ}\\mathrm{C}$ can be observed in the inset.","id":"test/atomic-layer-deposition/experimental-usecase/48/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/48/fig_3","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure compares the optical dielectric function of films grown at different temperatures (150–400 °C) as a function of photon energy. The left axis shows the real part ε₁, which increases with photon energy and shows modest temperature-dependent shifts. The right axis shows the imaginary part, ε₂ (optical absorption), which is near zero at low energies and then rises sharply around ~5.5–6+ eV.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature, °C | Photon energy (eV) | ε₁ | ε₂ |\\n|---|---|---|---|\\n| 150 | 1.2 | 3.8 | 0.01 |\\n| 150 | 5 | 5.3| 0.01 |\\n| 150 | 6.4 | 8.2 | 1.7 |\\n| 200 | 1.2 | 3.9 | 0.01 |\\n| 200 | 5 | 5.6| 0.01 |\\n| 200 | 6.4 | 8.6 | 1.8 |\\n| 250 | 1.2 | 3.9 | 0.01 |\\n| 250 | 5 | 5.6| 0.01 |\\n| 250 | 6.4 | 8.9 | 1.8 |\\n| 300 | 1.2 | 3.9 | 0.01 |\\n| 300 | 5 | 5.9| 0.01 |\\n| 300 | 6.4 | 9.2 | 1.9 |\\n| 350 | 1.2 | 4 | 0.01 |\\n| 350 | 5 | 5.9| 0.01 |\\n| 350 | 6.4 | 9.1 | 1.9 |\\n| 400 | 1.2 | 4.0 | 0.01 |\\n| 400 | 5 | 5.8| 0.01 |\\n| 400 | 6.0 | 7.7 | 0.86 |\\n| 400 | 6.4 | 8.7 | 1.2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film grown at 400 °C shows the highest refractive index. In the low-photon-energy region where ε₂ ≈ 0, the 400 °C curve has the highest ε₁. The higher value of ε₁ in this region corresponds to the higher refractive index.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film grown at 400 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film grown at 150 °C .\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":609,"height":452}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/Sharma et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"48","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":609,"height":452,"image_format":"jpeg","image_sha256":"487c9d4b729825fc6da243a1194df0d407e93e6533228d0aae70dfb8a47f7f2a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_51_fig_5.jpg","caption":"Fig. 5 Refractive index $n$ and extinction coefficient $k$ of the produced $\\mathrm{MoO}_x$ layer as determined from spectroscopic ellipsometry","id":"test/atomic-layer-deposition/experimental-usecase/51/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/51/fig_5","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the refractive index n and extinction coefficient k of materials under different conditions of oxygen and argon exposure over a range of photon energies.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | refractive index n | extinction coefficient k |\\n|---|---|---|\\n| 2 second O2 | Exponential increase from (1.5 eV, n = 1.8) to (3.0 eV, n = 2.2) | Constant at k = 0 |\\n| 2 second O2 & Ar | Exponential increase from (1.5 eV, n = 1.9) to (3.0 eV, n = 2.3) | Constant at > 0 |\\n| 1 second O2 | Peak at 2 eV, trough at 2.5 eV | Peak at 2.25 eV, trough at 2.75 eV |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The three samples differed in plasma type and exposure time; 1 s O2 plasma, 2 s O2 plasma, 2 s O2 and 2 s Ar plasma.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1 s oxygen plasma exposure caused the sample to still have a nonzero extinction index, whereas 2 s oxygen plasma exposure led to no extinction index. The additional argon plasma exposure led to a small and constant extinction index.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 1 s oxygen has a clear peak and trough, whereas the samples exposed to 2 seconds of oxygen plasma only show an exponential increase (as a function of photon energy).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 0.1.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":653,"height":517}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/Ziegler et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":653,"height":517,"image_format":"jpeg","image_sha256":"cff23cfd8da1c5866ed6b475ef0c7620ceb2001d566e3161708b6bc11ef79fbf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG11.jpg","caption":"FIG. 11. Calculated energy flux density delivered to the surface via ions (open circles) as well as ions and fast neutrals (squares) plotted as a function of pressure, power, and $\\mathrm{O}_2$ flow fraction. The dotted lines represent the estimated energy flux density from ions and fast neutrals necessary for the onset of crystallization ( $\\approx 0.02\\mathrm{W} / \\mathrm{m}^2$ ) and saturation in crystalline character ( $\\approx 0.04\\mathrm{W} / \\mathrm{m}^2$ ). The area of Mixed Crystalline Character showed weak evidence of the crystalline material. The boundaries for crystallization thresholds are estimated from thin film characterizations.","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG11","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG11","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"In panel (a), increasing pressure leads to a rapid decline in energy flux for both \\\"Ions + fast neutrals\\\" and \\\"Ions only\\\", with fast neutrals contributing significantly to overall flux.\"},{\"panel_id\":\"b\",\"text\":\"Panel (b) demonstrates a sharp increase in energy flux with power in a CCP system, transitioning from amorphous to mixed, and eventually to crystalline film growth at high power.\"},{\"panel_id\":\"c\",\"text\":\"Panel (c) displays a similar trend with increasing O₂ flow fraction, low fractions result in amorphous material, while higher flow promotes crystalline structure. The figure shows how process parameters directly influence energy delivery and crystalline phase formation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pressure (mTorr) | Energy Flux Density - Ions + Fast Neutrals (W/m²) | Energy Flux Density - Ions Only (W/m²) |\\n|------------------|---------------------------------------------------|----------------------------------------|\\n| 500 | 0.14 | 0.03 |\\n| 1000 | 0.10 | 0.02 |\\n| 1500 | 0.08 | 0.01 |\\n| 2000 | 0.06 | 0.007 |\\n| 3000 | 0.04 | 0.005 |\\n| 4000 | 0.03 | 0.004 |\\n| 5000 | 0.02 | 0.003 |\"},{\"panel_id\":\"b\",\"text\":\"| Power (W) | Energy Flux Density (W/m²) | Crystallinity |\\n|-----------|-----------------------------|----------------|\\n| 100 | 0.1 | Amorphous |\\n| 200 | 0.2 | Amorphous |\\n| 300 | 0.4 | Mixed |\\n| 400 | 0.8 | Mixed |\\n| 500 | 1.2 | Mixed |\\n| 600 | 1.6 | Crystalline |\\n| 700 | 2.0 | Crystalline |\\n| 800 | 2.4 | Crystalline |\\n| 900 | 2.6 | Crystalline |\\n| 1000 | 2.8 | Crystalline |\"},{\"panel_id\":\"c\",\"text\":\"| O₂ Flow Fraction | Energy Flux Density (W/m²) | Crystallinity |\\n|------------------|-----------------------------|----------------|\\n| 0.0 | 0.03 | Amorphous |\\n| 0.1 | 0.04 | Amorphous |\\n| 0.2 | 0.05 | Mixed |\\n| 0.3 | 0.06 | Mixed |\\n| 0.4 | 0.07 | Mixed |\\n| 0.5 | 0.08 | Crystalline |\\n| 0.6 | 0.09 | Crystalline |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As RF power increases from 100 W to 1000 W, the energy flux density rises sharply from approximately 0.1 W/m² to nearly 3 W/m². This dramatic increase correlates with a transition in material crystallinity—from amorphous at low power to mixed-phase, and ultimately crystalline at higher power levels. The figure clearly shows that there is a threshold energy flux beyond which crystalline growth becomes favored, highlighting the role of plasma energy input in driving film ordering and structure.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Pressure (mTorr), RF Power (W), O₂ flow fraction\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approx. 600 W\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":490,"height":404},{"panel_id":"b","x":501,"y":6,"width":402,"height":396},{"panel_id":"c","x":901,"y":9,"width":484,"height":395}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":1395,"height":406,"image_format":"jpeg","image_sha256":"90ecc61763eadb51b583c4d0c8dd280b43ca04f2b89bcc4d564cae10655f86c1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG12.jpg","caption":"FIG. 12. Ion energies derived from the measured plasma potential (squares) and from the calculated average ion energy (circles) plotted as a function of pressure, power, and $\\mathrm{O}_2$ flow fraction. The dotted lines represent the estimated ion energy necessary for the onset of crystallization ( $\\approx 11\\mathrm{eV}$ ) and fully developed crystalline character ( $\\approx 17\\mathrm{eV}$ ). The area of Mixed Crystalline Character showed weak evidence of the crystalline material. The boundaries for crystallization thresholds are estimated from thin film characterizations.","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG12","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG12","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Panel (a) shows that increasing pressure reduces both plasma potential and ion energy.\"},{\"panel_id\":\"b\",\"text\":\"Panel (b) reveals that increasing RF power leads to a steady rise in ion energy.\"},{\"panel_id\":\"c\",\"text\":\"Panel (c) illustrates that higher O₂ flow fractions also result in increased ion energy, with a transition from amorphous to crystalline film regimes indicated in the central panel.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pressure (mTorr) | Plasma Potential (eV) | Mean Ion Energy (eV) |\\n|------------------|------------------------|------------------------|\\n| 830 | ~42 | ~22 |\\n| 1600 | ~38 | ~20 |\\n| 2400 | ~34 | ~18 |\\n| 3000 | ~31 | ~15 |\\n| 4300 | ~27 | ~13 |\\n| 5000 | ~25 | ~10 |\"},{\"panel_id\":\"b\",\"text\":\"| Power (W) | Ion Energy (eV) |\\n|-----------|-----------------|\\n| 100 | ~22 |\\n| 200 | ~24 |\\n| 300 | ~26 |\\n| 400 | ~28 |\\n| 500 | ~30 |\\n| 600 | ~33 |\\n| 700 | ~36 |\\n| 800 | ~38 |\\n| 900 | ~40 |\\n| 1000 | ~42 |\"},{\"panel_id\":\"c\",\"text\":\"| O₂ Flow Fraction | Ion Energy (eV) |\\n|------------------|------------------|\\n| 0.0 | ~25 |\\n| 0.1 | ~27 |\\n| 0.2 | ~30 |\\n| 0.3 | ~33 |\\n| 0.4 | ~36 |\\n| 0.5 | ~40 |\\n| 0.6 | ~43 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Power results in the steepest increase in ion energy\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As pressure increases, both the plasma potential and mean ion energy decrease. This is attributed to the enhanced collisionality in higher-pressure regimes, which leads to energy loss through collisions, reducing the kinetic energy of ions reaching the surface. Lower plasma potentials also indicate a reduced driving force for ion acceleration. These combined effects diminish the energy transferred to the surface, influencing film growth and etching behaviour.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Prevents ion damage, Controls crystallinity, Optimizes selectivity and anisotropy, Maintains uniform growth and interface quality\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":487,"height":409},{"panel_id":"b","x":497,"y":9,"width":401,"height":405},{"panel_id":"c","x":902,"y":5,"width":487,"height":403}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":1392,"height":411,"image_format":"jpeg","image_sha256":"e684f8d5b4febcd00b31dbb55e6baa92cfc81d67abc855b1e68ddf5f0323e697","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG4_b.jpg","caption":"Capacitively coupled FIG. 4. (a) Atomic O density vs plasma power measured with OES. (b) Ion flux and plasma potential as a function of plasma power. Gray regions of each plot represent processing space in which the plasma operated in a capacitively coupled mode.","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG4_b","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG4_b","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"b","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"b\",\"text\":\"This figure plots both ion flux and plasma potential as functions of power in an inductively coupled plasma (ICP) system. As RF power increases from 0 to 1000 W, both plasma potential (red circles) and ion flux (black squares) show upward trends. The plasma potential increases gradually and linearly from 0 V to 100 V, indicating a smooth energising of the plasma. In contrast, ion flux demonstrates a sharper, more nonlinear rise, particularly beyond the 600 W mark, indicating a threshold above which ion generation increases rapidly. This suggests that higher RF power significantly boosts the energy and quantity of charged species, which is critical for surface modification processes like etching or deposition\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"| Power (W) | Ion Flux (m⁻²·s⁻¹) × 10¹⁷ | Plasma Potential (V) |\\n|-----------|-----------------------------|------------------------|\\n| 0 | 0.0 | 0 |\\n| 50 | 2.0 | 10 |\\n| 100 | 2.0 | 10 |\\n| 150 | 3.0 | 20 |\\n| 200 | 3.0 | 20 |\\n| 250 | 4.0 | 30 |\\n| 300 | 4.0 | 30 |\\n| 350 | 5.0 | 40 |\\n| 400 | 5.0 | 40 |\\n| 450 | 6.0 | 50 |\\n| 500 | 6.0 | 50 |\\n| 550 | 7.0 | 60 |\\n| 600 | 7.0 | 60 |\\n| 650 | 8.0 | 70 |\\n| 700 | 8.0 | 70 |\\n| 750 | 9.0 | 80 |\\n| 800 | 9.0 | 80 |\\n| 850 | 10.0 | 90 |\\n| 900 | 10.0 | 90 |\\n| 950 | 11.0 | 100 |\\n| 1000 | 11.0 | 100 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both ion flux and plasma potential increase as the power rises from 0 W to 1000 W. However, their rates of increase differ. Plasma potential exhibits a relatively linear progression, climbing steadily from 0 V to 100 V. In contrast, ion flux remains low until approximately 500–600 W, after which it increases steeply, more than quadrupling in value. This disparity suggests a threshold behavior in ion production, where power beyond a critical value significantly enhances ion generation. This information is crucial for tuning plasma parameters in applications requiring high-density ion bombardment.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50 V\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"RF Power (W), Ion flux (m⁻²·s⁻¹), Plasma potential (V)\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"b","x":0,"y":0,"width":741,"height":506}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG4_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG4_b.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"b","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":741,"height":506,"image_format":"jpeg","image_sha256":"85366f9cb135922a5dee68a91c194464d5ed9c462c5760f92853233e5cf31d2b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG6_b.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG6_b","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG6_b","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"b","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"b\",\"text\":\"This multi-axis chart shows how ion flux and plasma potential vary with changes in O₂ flow fraction. As O₂ flow increases from 0.0 to 0.3, ion flux initially decreases, reaching a minimum, before increasing again at 0.5. In contrast, plasma potential exhibits a steady upward trend, rising from 20 V at 0.0 O₂ flow to 45 V at 0.5. This divergence suggests that while plasma potential becomes stronger with more oxygen, the ion flux behaviour is non-monotonic and may be influenced by other plasma chemistry factors.\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"| O₂ Flow Fraction | Ion flux (m⁻² s⁻¹) | Plasma Potential (V) |\\n|------------------|------------------|---------------------|\\n| 0.0 | 3×10¹⁶ | 20 |\\n| 0.1 | 2×10¹⁶ | 25 |\\n| 0.3 | 1.5×10¹⁶ | 30 |\\n| 0.5 | 3×10¹⁶ | 45 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ion flux does not follow a monotonic trend. It decreases between 0.0 and 0.3 O₂ flow fraction, reaching its lowest value at 0.3, then rises again at 0.5. In contrast, plasma potential steadily increases with increasing O₂ flow fraction, starting at 20 V and reaching 45 V at the highest flow rate. This indicates that oxygen affects ion energy and flux through different plasma mechanisms, likely involving electron density and ionisation efficiency\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.3 O₂ flow fraction\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Plasma potential controls ion energy, Ion flux sets reactive species count, Balance optimizes efficiency\"}]}]","bbox":[{"panel_id":"b","x":0,"y":0,"width":736,"height":516}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG6_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG6_b.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"b","first_classification_label":"multi-axis chart","caption_source":"not_found"},"width":736,"height":516,"image_format":"jpeg","image_sha256":"d15da6a793c5c66e5b785bfd401a607ad6dc2cef7ffa76503c17743ca465680c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG8_b.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG8_b","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG8_b","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"b","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"b\",\"text\":\"This multi-axis chart displays how ion flux and plasma potential change with increasing pressure for two plasma coupling modes. The ion flux decreases sharply between 500 mTorr and 2000 mTorr, then levels off, while the plasma potential steadily drops with pressure, stabilising around 10 V. The figure visually separates regions of capacitive coupling and inductive coupling, highlighting their different ion delivery characteristics in plasma processing.\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"| Pressure (mTorr) | Ion flux (m⁻² s⁻¹) | Plasma potential (V) |\\n|------------------|---------------------|-----------------------|\\n| 500 | 4.0 × 10¹⁶ | 50 |\\n| 1000 | 2.5 × 10¹⁶ | 25 |\\n| 2000 | 1.5 × 10¹⁶ | 20 |\\n| 3000 | 1.2 × 10¹⁶ | 15 |\\n| 4000 | 1.0 × 10¹⁶ | 12 |\\n| 5000 | 1.0 × 10¹⁶ | 10 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure shows that at low pressure (around 500 mTorr), capacitive coupling leads to a much higher plasma potential and significantly greater ion flux compared to inductive coupling. As pressure increases, ion flux drops steeply and levels off, while plasma potential also decreases. This indicates that capacitive coupling is more effective at delivering energetic ions to the surface in low-pressure conditions, while inductive coupling provides more moderate plasma potentials and ion fluxes across a broader pressure range.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2000 mTorr\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Reduced ion acceleration , Lower surface etch rates , Gentler plasma–material interactions\"}]}]","bbox":[{"panel_id":"b","x":0,"y":0,"width":741,"height":542}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG8_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG8_b.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"b","first_classification_label":"multi-axis chart","caption_source":"not_found"},"width":741,"height":542,"image_format":"jpeg","image_sha256":"1df77695e2007a9ac2da53ee932be030593070568e2c98fde471489f228315df","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_20_9175e11f30b3092758947bdf3aa32cd77f985f28f01e6a235760a45ca776fe97.jpg","caption":"","id":"test/atomic-layer-deposition/simulation-usecase/20/9175e11f30b3092758947bdf3aa32cd77f985f28f01e6a235760a45ca776fe97","sample_id":"atomic-layer-deposition/simulation-usecase/20/9175e11f30b3092758947bdf3aa32cd77f985f28f01e6a235760a45ca776fe97","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"TMA and water concentrations at position B (water side) over time for three wafer temperatures (150°C, 200°C, 250°C). Higher temperature increases TMA (foreign precursor) concentration, with 250°C reaching approximately 1.5×10⁻⁵ mol/m³ compared to 0.8×10⁻⁵ mol/m³ at 150°C. Water (home precursor) reaches steady state faster at higher temperatures but achieves lower final concentration.\"},{\"panel_id\":\"b\",\"text\":\"TMA and water concentrations at position C (TMA side) over time for three wafer temperatures. Higher temperature increases water intermixing, with 250°C yielding approximately 2×10⁻⁴ mol/m³ water compared to 1.7×10⁻⁴ mol/m³ at 150°C. TMA (home precursor) shows slightly lower steady-state values at higher temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | TMA 150°C (mol/m³) | TMA 200°C (mol/m³) | TMA 250°C (mol/m³) | Water 150°C (mol/m³) | Water 200°C (mol/m³) | Water 250°C (mol/m³) |\\n|---|---|---|---|---|---|---|\\n| 0.000 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 0.005 | 0.01E-5 | 0.01E-5 | 0.01E-5 | 1.9E-3 | 1.5E-3 | 1.0E-3 |\\n| 0.010 | 0.05E-5 | 0.05E-5 | 0.08E-5 | 5.8E-3 | 4.8E-3 | 3.5E-3 |\\n| 0.015 | 0.20E-5 | 0.25E-5 | 0.35E-5 | 6.7E-3 | 5.8E-3 | 5.1E-3 |\\n| 0.020 | 0.45E-5 | 0.50E-5 | 0.65E-5 | 6.9E-3 | 6.1E-3 | 5.5E-3 |\\n| 0.025 | 0.70E-5 | 0.75E-5 | 0.90E-5 | 6.9E-3 | 6.1E-3 | 5.6E-3 |\\n| 0.030 | 0.82E-5 | 0.88E-5 | 1.05E-5 | 6.9E-3 | 6.2E-3 | 5.6E-3 |\\n| 0.040 | 0.85E-5 | 0.92E-5 | 1.10E-5 | 6.9E-3 | 6.2E-3 | 5.6E-3 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | TMA 150°C (mol/m³) | TMA 200°C (mol/m³) | TMA 250°C (mol/m³) | Water 150°C (mol/m³) | Water 200°C (mol/m³) | Water 250°C (mol/m³) |\\n|---|---|---|---|---|---|---|\\n| 0.000 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 0.005 | 0.25E-3 | 0.15E-3 | 0.10E-3 | 0.00 | 0.00 | 0.00 |\\n| 0.010 | 1.20E-3 | 0.80E-3 | 0.60E-3 | 0.15E-4 | 0.20E-4 | 0.10E-4 |\\n| 0.015 | 2.50E-3 | 1.90E-3 | 1.40E-3 | 0.90E-4 | 1.00E-4 | 1.10E-4 |\\n| 0.020 | 3.60E-3 | 2.80E-3 | 2.20E-3 | 1.40E-4 | 1.60E-4 | 1.80E-4 |\\n| 0.025 | 4.10E-3 | 3.50E-3 | 2.80E-3 | 1.70E-4 | 1.90E-4 | 2.20E-4 |\\n| 0.030 | 4.30E-3 | 3.80E-3 | 3.10E-3 | 1.80E-4 | 2.10E-4 | 2.40E-4 |\\n| 0.040 | 4.40E-3 | 4.00E-3 | 3.30E-3 | 1.90E-4 | 2.20E-4 | 2.60E-4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Temperature has a moderate effect on intermixing, increasing foreign precursor concentrations at both monitoring positions as temperature rises from 150°C to 250°C. However, gap size has the strongest influence on intermixing (Figure 4 shows an 8-fold difference between 1 mm and 2 mm gaps), while pumping pressure has an intermediate effect. Temperature uniquely affects both intermixing and deposition kinetics, creating a trade-off since higher temperatures improve film growth rate but worsen precursor separation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At higher temperatures, the gas expands and has lower density, and enhanced diffusion distributes water molecules more broadly, resulting in slightly lower local concentrations at the monitoring position.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200°C offers a reasonable compromise, providing good deposition rate (approximately 1.2 Å/cycle) while maintaining moderate intermixing levels, compared to 250°C which has higher intermixing or 150°C which has slower deposition kinetics.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher temperature accelerates diffusive mass transport by increasing molecular kinetic energy, which enhances the movement of precursor molecules across the separating gas barriers into neighboring zones.\"}]}]","bbox":[{"panel_id":"a","x":8,"y":4,"width":630,"height":451},{"panel_id":"b","x":8,"y":458,"width":634,"height":434}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/9175e11f30b3092758947bdf3aa32cd77f985f28f01e6a235760a45ca776fe97.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/9175e11f30b3092758947bdf3aa32cd77f985f28f01e6a235760a45ca776fe97.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/Dongqing Pan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"not_found"},"width":645,"height":892,"image_format":"jpeg","image_sha256":"357ff7155183fa4c7120093d14cdc43d0b0608be534480c387c30bc8d5eecbf4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_20_fig_3.jpg","caption":"Fig. 3. The effects of gap size on precursor intermixing with ideal pumping condition (0.22 torr) and $200^{\\circ}$ C deposition temperature: (a) TMA and water concentration in $\\mathrm{mol} / \\mathrm{m}^3$ at water side (position B) with gap size 1, 1.5, and $2 \\mathrm{mm}$ , and (b) at TMA side (position C) with gap size 1, 1.5, and $2 \\mathrm{mm}$ .","id":"test/atomic-layer-deposition/simulation-usecase/20/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/20/fig_3","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"TMA and water concentrations at position B (water side) over time for three gap sizes. The left axis shows TMA (the foreign precursor at this location) reaching steady state concentrations of approximately 3×10⁻⁵ mol/m³ for 1 mm gap versus less than 1×10⁻⁵ mol/m³ for larger gaps. The right axis shows water (home precursor) concentration, which reaches steady state faster for larger gaps.\"},{\"panel_id\":\"b\",\"text\":\"TMA and water concentrations at position C (TMA side) over time for three gap sizes. TMA (home precursor, left axis) reaches approximately 4×10⁻³ mol/m³ at steady state for all gaps, while water (foreign precursor, right axis) shows higher intermixing levels, particularly for 1 mm gap where water concentration reaches approximately 5×10⁻⁴ mol/m³.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | TMA-1mm (mol/m³) | TMA-1.5mm (mol/m³) | TMA-2mm (mol/m³) | Water-1mm (mol/m³) | Water-1.5mm (mol/m³) | Water-2mm (mol/m³) |\\n|---|---|---|---|---|---|---|\\n| 0.00 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 0.01 | 0.00 | 0.10E-5 | 0.10E-5 | 0.10E-3 | 3.8E-3 | 5.5E-3 |\\n| 0.02 | 0.05E-5 | 0.50E-5 | 0.30E-5 | 0.20E-3 | 5.8E-3 | 6.5E-3 |\\n| 0.03 | 0.10E-5 | 0.80E-5 | 0.30E-5 | 1.0E-3 | 6.2E-3 | 6.6E-3 |\\n| 0.04 | 0.40E-5 | 0.90E-5 | 0.30E-5 | 3.5E-3 | 6.3E-3 | 6.6E-3 |\\n| 0.06 | 1.40E-5 | 0.90E-5 | 0.30E-5 | 4.9E-3 | 6.3E-3 | 6.6E-3 |\\n| 0.08 | 2.30E-5 | 0.90E-5 | 0.30E-5 | 5.4E-3 | 6.3E-3 | 6.6E-3 |\\n| 0.10 | 3.10E-5 | 0.90E-5 | 0.30E-5 | 5.8E-3 | 6.3E-3 | 6.6E-3 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | TMA-1mm (mol/m³) | TMA-1.5mm (mol/m³) | TMA-2mm (mol/m³) | Water-1mm (mol/m³) | Water-1.5mm (mol/m³) | Water-2mm (mol/m³) |\\n|---|---|---|---|---|---|---|\\n| 0.00 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 0.01 | 0.10E-3 | 0.80E-3 | 2.0E-3 | 0.00 | 0.50E-4 | 1.0E-4 |\\n| 0.02 | 0.20E-3 | 2.20E-3 | 3.8E-3 | 0.10E-4 | 1.20E-4 | 1.5E-4 |\\n| 0.03 | 0.30E-3 | 3.20E-3 | 3.9E-3 | 0.30E-4 | 1.80E-4 | 1.5E-4 |\\n| 0.04 | 0.50E-3 | 3.60E-3 | 4.0E-3 | 0.80E-4 | 2.00E-4 | 1.5E-4 |\\n| 0.06 | 1.00E-3 | 3.60E-3 | 4.0E-3 | 2.20E-4 | 2.00E-4 | 1.5E-4 |\\n| 0.08 | 1.60E-3 | 3.60E-3 | 4.0E-3 | 3.60E-4 | 2.00E-4 | 1.5E-4 |\\n| 0.10 | 2.10E-3 | 3.60E-3 | 4.0E-3 | 4.60E-4 | 2.00E-4 | 1.5E-4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 1 mm gap produces the highest intermixing levels at both monitoring positions. This occurs because the narrow gap restricts convective gas flow, making mass transport dominated by diffusion. In the high vacuum system (0.22 torr), diffused precursor molecules accumulate in the exhaust regions due to insufficient convective forces to purge them, resulting in higher foreign precursor concentrations compared to larger gaps where convection is more effective.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In (a), water is the home precursor at position B so its concentration is high (10⁻³ to 10⁻² mol/m³). In (b), water is the foreign precursor at position C, so only small amounts from intermixing are detected (10⁻⁴ mol/m³ scale).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Position B is located at the water side (under the exhaust between water and nitrogen zones) and position C is at the TMA side (under the exhaust between nitrogen and TMA zones), used to monitor precursor concentrations and intermixing.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Intermixing is more severe at the TMA side, with a relative intermixing ratio of approximately 1:4 (water to TMA), compared to weaker intermixing at the water side, due to water's higher inlet vapor pressure driving stronger diffusion.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":1,"width":664,"height":457},{"panel_id":"b","x":4,"y":463,"width":669,"height":453}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/Dongqing Pan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":677,"height":919,"image_format":"jpeg","image_sha256":"839d8283fa703d81770793f2a88b8942ccb9b12a10fa12be353a2d007554c1ed","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_20_fig_5.jpg","caption":"Fig. 5. The effects of relative pumping pressure (0, 0.05, to 0.1 torr) on the precursor intermixing with gap size and wafer temperature fixed at $1.5 \\mathrm{mm}$ and $200^{\\circ}$ C: (a) TMA and water concentration in $\\mathrm{mol} / \\mathrm{m}^3$ at water side (position B), and (b) at TMA side (position C). The simulation time is $0.04 \\mathrm{s}$ with $1.5 \\mathrm{mm}$ gap size.","id":"test/atomic-layer-deposition/simulation-usecase/20/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/20/fig_5","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"TMA and water concentrations at position B (water side) over time for three relative pumping pressures (0, 0.05, 0.1 torr above base pressure). Higher pumping pressure results in higher TMA intermixing, with 0.1 torr yielding approximately 2.2×10⁻⁵ mol/m³ TMA compared to less than 1×10⁻⁵ mol/m³ at 0 torr. Water (home precursor) shows similar steady state levels across all pressures.\"},{\"panel_id\":\"b\",\"text\":\"TMA and water concentrations at position C (TMA side) over time for three relative pumping pressures. Higher pumping pressure increases water intermixing, with steady state water concentration approximately doubling from 2×10⁻⁴ mol/m³ at 0 torr to 5×10⁻⁴ mol/m³ at 0.1 torr. TMA (home precursor) reaches similar levels across all pressures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | TMA-0 torr (mol/m³) | TMA-0.05 torr (mol/m³) | TMA-0.1 torr (mol/m³) | Water-0 torr (mol/m³) | Water-0.05 torr (mol/m³) | Water-0.1 torr (mol/m³) |\\n|---|---|---|---|---|---|---|\\n| 0.000 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 0.005 | 0.00 | 0.00 | 0.00 | 2.5E-3 | 3.2E-3 | 4.0E-3 |\\n| 0.010 | 0.10E-5 | 0.20E-5 | 0.20E-5 | 4.8E-3 | 5.5E-3 | 6.2E-3 |\\n| 0.020 | 0.50E-5 | 0.80E-5 | 0.85E-5 | 6.1E-3 | 6.4E-3 | 6.7E-3 |\\n| 0.030 | 0.80E-5 | 1.40E-5 | 1.60E-5 | 6.3E-3 | 6.5E-3 | 6.8E-3 |\\n| 0.040 | 0.95E-5 | 1.70E-5 | 2.20E-5 | 6.3E-3 | 6.5E-3 | 6.9E-3 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | TMA-0 torr (mol/m³) | TMA-0.05 torr (mol/m³) | TMA-0.1 torr (mol/m³) | Water-0 torr (mol/m³) | Water-0.05 torr (mol/m³) | Water-0.1 torr (mol/m³) |\\n|---|---|---|---|---|---|---|\\n| 0.000 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 0.010 | 0.80E-3 | 1.00E-3 | 1.20E-3 | 0.50E-4 | 0.80E-4 | 1.20E-4 |\\n| 0.020 | 2.40E-3 | 2.70E-3 | 2.90E-3 | 1.90E-4 | 2.60E-4 | 3.50E-4 |\\n| 0.030 | 3.20E-3 | 3.60E-3 | 3.70E-3 | 2.00E-4 | 3.00E-4 | 4.90E-4 |\\n| 0.040 | 3.60E-3 | 4.10E-3 | 4.30E-3 | 2.10E-4 | 3.10E-4 | 5.30E-4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It means the pumping pressure equals the base vacuum pressure of 0.22 torr, representing the ideal pumping condition with maximum pressure difference driving convective flow.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 0 torr relative pumping pressure (equal to the base pressure of 0.22 torr) minimizes intermixing, as it maintains the maximum pressure gradient for effective convective gas removal.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The home precursor is continuously supplied directly above each monitoring position, maintaining its concentration regardless of pumping efficiency, while foreign precursor levels depend on how effectively the exhaust system prevents cross-contamination through convective purging.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Higher relative pumping pressure increases precursor intermixing at both monitoring positions. At the water side (a), TMA concentration roughly doubles from 0 torr to 0.1 torr. At the TMA side (b), water concentration increases from approximately 2×10⁻⁴ to 5×10⁻⁴ mol/m³. This occurs because higher pumping pressure reduces the pressure difference between inlets and outlets, weakening convective mass transport and allowing more diffusive mixing of precursors.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":5,"width":659,"height":463},{"panel_id":"b","x":0,"y":472,"width":665,"height":452}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/20/Dongqing Pan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":664,"height":927,"image_format":"jpeg","image_sha256":"36472c4f018898160688a256d176f0122d1dcd00d393ecafa3125c5c932b672e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_3_fig_6.jpg","caption":"FIG. 6. (Color online) Correlations of surface deposition rate of $\\mathrm{O(s)}$ and TMA molar fraction with coverage of $\\mathrm{^*Al(CH_3)_2(s)}$ for TMA pulsing step at 100, 150, 200, and $250^{\\circ}\\mathrm{C}$ , respectively. The gray dotted lines show the temperature effect on surface deposition. Surface deposition rate of $\\mathrm{O(s)}$ in mass per area per second is achieved by substituting Eq. (14) into Eq. (10).","id":"test/atomic-layer-deposition/simulation-usecase/3/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/3/fig_6","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"multi-axis chart"},{"panel_id":"d","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"TMA pulse at 100°C: Correlates surface deposition rate of O⟨s⟩ (red), TMA mole fraction (black), and *Al(CH₃)₂ surface coverage (blue). Deposition rate peaks around 5 ms then drops as surface coverage saturates to 50%, despite continued TMA concentration increase.\"},{\"panel_id\":\"b\",\"text\":\"TMA pulse at 150°C: Faster surface saturation than 100°C, with peak deposition occurring earlier. The dotted line at t=0.004s shows temperature comparison across panels.\"},{\"panel_id\":\"c\",\"text\":\"TMA pulse at 200°C: Surface saturation occurs even earlier. Peak deposition rate remains similar but is reached more quickly.\"},{\"panel_id\":\"d\",\"text\":\"TMA pulse at 250°C: Fastest saturation; surface coverage reaches 50% before 0.004s. At this point, deposition rate at 250°C is slightly lower than 200°C because surface is already saturated.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Flow time (ms) | Surface Deposition Rate of O ( kg/m2-s ) | *Al(Me)2 Surface Coverage | TMA Mole Fraction |\\n|---|---|---|---|\\n| 2 | 0.15e-04 | 0.10 | 0.00 |\\n| 3 | 0.60e-04 | 0.30 | 0.01 |\\n| 4 | 1.65e-04 | 0.50 | 0.05 |\\n| 5 | 0.10e-04 | 0.50 | 0.18 |\\n| 6 | 0.01e-04 | 0.50 | 0.30 |\\n| 8 | 0.00 | 0.50 | 0.50 |\\n| 10 | 0.00 | 0.50 | 0.65 |\\n| 12 | 0.00 | 0.50 | 0.75 |\\n| 14 | 0.00 | 0.50 | 0.80 |\\n| 20 | 0.00 | 0.50 | 0.90 |\"},{\"panel_id\":\"b\",\"text\":\"| Flow time (ms) | Surface Deposition Rate of O ( kg/m2-s ) | *Al(Me)2 Surface Coverage | TMA Mole Fraction |\\n|---|---|---|---|\\n| 2 | 0.05e-04 | 0.00 | 0.00 |\\n| 3 | 0.35e-04 | 0.10 | 0.02 |\\n| 4 | 1.05e-04 | 0.35 | 0.05 |\\n| 5 | 1.65e-04 | 0.50 | 0.15 |\\n| 6 | 0.10e-04 | 0.50 | 0.30 |\\n| 8 | 0.00 | 0.50 | 0.55 |\\n| 10 | 0.00 | 0.50 | 0.70 |\\n| 12 | 0.00 | 0.50 | 0.80 |\\n| 20 | 0.00 | 0.50 | 0.95 |\"},{\"panel_id\":\"c\",\"text\":\"| Flow time (ms) | Surface Deposition Rate of O ( kg/m2-s ) | *Al(Me)2 Surface Coverage | TMA Mole Fraction |\\n|---|---|---|---|\\n| 2 | 0.05e-04 | 0.00 | 0.00 |\\n| 3 | 0.55e-04 | 0.15 | 0.02 |\\n| 4 | 1.70e-04 | 0.50 | 0.10 |\\n| 5 | 0.15e-04 | 0.50 | 0.25 |\\n| 6 | 0.00 | 0.50 | 0.45 |\\n| 8 | 0.00 | 0.50 | 0.70 |\\n| 10 | 0.00 | 0.50 | 0.82 |\\n| 12 | 0.00 | 0.50 | 0.90 |\\n| 20 | 0.00 | 0.50 | 0.98 |\"},{\"panel_id\":\"d\",\"text\":\"| Flow time (ms) | Surface Deposition Rate of O ( kg/m2-s ) | *Al(Me)2 Surface Coverage | TMA Mole Fraction |\\n|---|---|---|---|\\n| 2 | 0.05e-04 | 0.00 | 0.00 |\\n| 3 | 0.75e-04 | 0.20 | 0.05 |\\n| 4 | 1.55e-04 | 0.50 | 0.25 |\\n| 5 | 0.10e-04 | 0.50 | 0.45 |\\n| 6 | 0.00 | 0.50 | 0.60 |\\n| 8 | 0.00 | 0.50 | 0.82 |\\n| 10 | 0.00 | 0.50 | 0.90 |\\n| 12 | 0.00 | 0.50 | 0.95 |\\n| 20 | 0.00 | 0.50 | 0.98 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The deposition rate drops drastically once surface coverage saturates at 50% (the other half is occupied by *AlCH₃). Even though TMA concentration continues to increase, no further deposition occurs because all reactive *OH surface sites have been consumed. This demonstrates the self-limiting nature of ALD.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Red circles (left axis): mass deposition rate of bulk oxygen species O⟨s⟩; black squares (right axis): TMA gas-phase mole fraction; blue diamonds (right axis): *Al(CH₃)₂ surface species coverage.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The peak deposition rate values are nearly identical (~1.6×10⁻⁴ kg/m²·s) across all four temperatures; only the time to reach the peak changes.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher temperature accelerates saturation. The dotted lines show saturation is reached at approximately t=0.004s for 100°C but progressively earlier at higher temperatures, with 250°C saturating fastest.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":1,"width":327,"height":508},{"panel_id":"b","x":323,"y":1,"width":218,"height":512},{"panel_id":"c","x":524,"y":1,"width":211,"height":497},{"panel_id":"d","x":721,"y":1,"width":264,"height":505}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/Dongqing Pan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":988,"height":514,"image_format":"jpeg","image_sha256":"96e01756219cc7d940d0d30e5c06f64d56e37f1df6bf7ae43c71a60b6aba3ae7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_3_fig_7.jpg","caption":"FIG. 7. (Color online) Relation of surface deposition rate of $\\mathrm{Al}(\\mathrm{s})$ , $\\mathrm{H}_2\\mathrm{O}$ molar fraction and coverage of species $\\mathrm{^*OH}$ for water pulsing step at 100, 150, 200, and $250^{\\circ}\\mathrm{C}$ , respectively. The gray dotted lines show the process temperature effect on surface deposition. Surface deposition rate of $\\mathrm{Al}(\\mathrm{s})$ in mass per area per second is achieved by substituting Eq. (14) into Eq. (10).","id":"test/atomic-layer-deposition/simulation-usecase/3/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/3/fig_7","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"multi-axis chart"},{"panel_id":"d","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Water pulse at 100°C: Shows surface deposition rate of Al⟨s⟩ (red), H₂O mole fraction (black), and *OH surface coverage (purple). Deposition rate peaks then declines as *OH coverage saturates to ~100%.\"},{\"panel_id\":\"b\",\"text\":\"Water pulse at 150°C: Faster *OH saturation than 100°C. Peak deposition rate is slightly higher and reached earlier.\"},{\"panel_id\":\"c\",\"text\":\"Water pulse at 200°C: Surface saturates around t=0.003s. Deposition becomes hindered once *OH fully covers the surface.\"},{\"panel_id\":\"d\",\"text\":\"Water pulse at 250°C: Fastest saturation with highest peak deposition rate. However, after ~0.003s, deposition rate at 250°C falls below that at 200°C because reactive *Al(CH₃)₂ and *AlCH₃ sites are consumed more quickly.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Flow time (ms) | Surface Deposition Rate ( kg/m2-s ) | *OH Surface Coverage | H2O Mole Fraction |\\n|---|---|---|---|\\n| 1 | 0.55e-04 | 0.15 | 0.02 |\\n| 2 | 1.05e-04 | 0.70 | 0.05 |\\n| 3 | 0.45e-04 | 0.92 | 0.20 |\\n| 4 | 0.15e-04 | 0.98 | 0.55 |\\n| 5 | 0.02e-04 | 1.00 | 0.85 |\\n| 6 | 0.00 | 1.00 | 0.95 |\\n| 7 | 0.00 | 1.00 | 1.00 |\"},{\"panel_id\":\"b\",\"text\":\"| Flow time (ms) | Surface Deposition Rate ( kg/m2-s ) | *OH Surface Coverage | H2O Mole Fraction |\\n|---|---|---|---|\\n| 1 | 0.70e-04 | 0.35 | 0.02 |\\n| 2 | 1.15e-04 | 0.90 | 0.10 |\\n| 3 | 0.35e-04 | 0.99 | 0.38 |\\n| 4 | 0.05e-04 | 1.00 | 0.78 |\\n| 5 | 0.00 | 1.00 | 0.95 |\\n| 6 | 0.00 | 1.00 | 1.00 |\"},{\"panel_id\":\"c\",\"text\":\"| Flow time (ms) | Surface Deposition Rate ( kg/m2-s ) | *OH Surface Coverage | H2O Mole Fraction |\\n|---|---|---|---|\\n| 1 | 0.85e-04 | 0.55 | 0.02 |\\n| 2 | 1.20e-04 | 0.95 | 0.20 |\\n| 3 | 0.25e-04 | 1.00 | 0.60 |\\n| 4 | 0.02e-04 | 1.00 | 0.90 |\\n| 5 | 0.00 | 1.00 | 0.98 |\\n| 6 | 0.00 | 1.00 | 1.00 |\"},{\"panel_id\":\"d\",\"text\":\"| Flow time (ms) | Surface Deposition Rate ( kg/m2-s ) | *OH Surface Coverage | H2O Mole Fraction |\\n|---|---|---|---|\\n| 1 | 1.30e-04 | 0.50 | 0.05 |\\n| 2 | 0.40e-04 | 0.95 | 0.30 |\\n| 3 | 0.05e-04 | 1.00 | 0.80 |\\n| 4 | 0.00 | 1.00 | 0.98 |\\n| 5 | 0.00 | 1.00 | 1.00 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The water pulse shows more complex temperature behavior. While higher temperature initially increases deposition rate (similar to TMA), after about 0.003s the deposition at higher temperatures becomes hindered. At 250°C, *OH saturates so quickly that the deposition rate drops below that at 200°C. This contrasts with TMA pulse where peak rates were temperature-independent.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. Higher temperature increases the peak rate and accelerates saturation, but after ~0.003s the deposition rate at 250°C falls below that at 200°C due to faster consumption of reactive surface sites.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"*OH (hydroxyl groups), which serve as reactive sites for the subsequent TMA pulse.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Once *OH fully covers the surface, all reactive *Al(CH₃)₂ and *AlCH₃ sites from the TMA pulse have been consumed, so no further reaction can occur.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":3,"width":312,"height":485},{"panel_id":"b","x":297,"y":7,"width":215,"height":486},{"panel_id":"c","x":496,"y":2,"width":204,"height":476},{"panel_id":"d","x":699,"y":0,"width":246,"height":493}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/Dongqing Pan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":947,"height":492,"image_format":"jpeg","image_sha256":"fa7b1cc0918b8037c4d60a9cf98c422769f74ddec076d25bb788a64be3272e42","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_46_fig_4.jpg","caption":"Fig. 4. Adsorption energy and reaction energy barrier as a function of the number of DMA ligands. The effect of temperature is considered for the adsorption energy.","id":"test/atomic-layer-deposition/simulation-usecase/46/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/46/fig_4","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows how adsorption energy and reaction energy barrier change with the number of dimethylamino ligands. Adsorption strength increases monotonically, while reaction barriers show a parabolic trend, highlighting an optimal ligand range balancing stability and reactivity.\"},{\"panel_id\":\"b\",\"text\":\"Entropy-corrected adsorption energies at 600 K are presented, showing a downward shift in adsorption energies under ALD conditions and a narrower window of viable precursors, explaining the preference for intermediate ligand numbers.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of dimethylamino ligands | Adsorption energy (eV) | Reaction energy barrier (eV) |\\n|---|---|---|\\n| 0 (Silane) | 0.16 | 1.42 |\\n| 1 (DMAS) | 0.59 | 0.65 |\\n| 2 (BDMAS) | 0.69 | 0.28 |\\n| 3 (TDMAS) | 0.74 | 0.75 |\\n| 4 (TeDMAS) | 0.84 | 1.81 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure identifies an optimal ligand-number window where adsorption energy is sufficient to prevent desorption while reaction barriers remain low enough for efficient surface chemistry under ALD conditions. By incorporating temperature effects and defining an acceptable adsorption-energy range, the analysis explains why precursors with intermediate DMA ligand numbers exhibit superior ALD performance.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Adsorption energy increases monotonically, while the reaction energy barrier decreases up to two DMA ligands and then increases, forming a parabolic trend.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Number of dimethylamino ligands bonded to Si, Strength of N···H–OH interactions, Steric crowding around the Si center, Ligand-induced strain at the transition state, Entropy loss upon adsorption at elevated temperature\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":578,"height":611}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/Yong-Chan Jeong et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":578,"height":611,"image_format":"jpeg","image_sha256":"6f3d535d464e71a9f9a661e68e687d85f03108f436c840dbd195e36f4263d241","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_46_fig_5.jpg","caption":"Fig. 5. Variation of bond lengths as a function of the number of DMA ligands. $\\sum d_{\\mathrm{Si - Si}}$ indicates the sum of the variation of the Si-Si bond lengths near the reaction site on the surface and $\\sum d_{\\mathrm{Si - L}}$ indicates the sum of the variation of the Si-ligand bond lengths in the Si precursors.","id":"test/atomic-layer-deposition/simulation-usecase/46/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/46/fig_5","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":539,"height":400}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/Yong-Chan Jeong et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":539,"height":400,"image_format":"jpeg","image_sha256":"9352ee35fe850f27925e22d69e10245878e4abb8698e01d40ec05bd5bc88c675","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_27_fig_2.jpg","caption":"Fig. 2. The etch depth per cycle $(\\mathrm{A / cycle})$ of $\\mathrm{Al}_2\\mathrm{O}_3$ and the rms roughness of the etched $\\mathrm{Al}_2\\mathrm{O}_3$ surface measured as a function of $\\mathrm{BCl}_3$ gas flow rate from 0 to 100 sccm at 1st grid voltage of $100\\mathrm{V}$ for the $\\mathrm{Ar}^+$ ion beam in the 3rd desorption step.","id":"test/atomic-layer-etching/experimental-usecase/27/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/27/fig_2","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between gas flow rate and etch rate and surface roughness. As the gas flow rate increases, the etch rate increases while the surface roughness decreases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gas Flow Rate (sccm) | Etch Rate (Å / cycle) | Surface Roughness (Å) |\\n|---|---|---|\\n| 0 | 0.10 | 5.0 |\\n| 25 | 0.80 | 7.0 |\\n| 50 | 0.85 | 5.0 |\\n| 75 | 1.00 | |\\n| 100 | 1.00 | 4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"100 V.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.0 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 7.0 Å.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the sccm increases, so too does the etch rate, until it reaches a value of 1.0 Å/cycle at 75 sccm. In this range, the surface roughness first increases until 25 sccm, after which it decreases. Below 75 sccm, the surface is only partially covered, which leads to partial etching. This partial etching is the cause of the increased roughness. At full surface coverage, one monolayer is etched per cycle, which leads to values of roughness comparable to the reference.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":1,"width":672,"height":432}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/Atomic layer etching of Al2O3 using BCl3Ar.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":677,"height":433,"image_format":"jpeg","image_sha256":"a20ca862c491e69ea6c37bdce595348004699d9c351939c8a3bf724f36492669","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_27_fig_3.jpg","caption":"Fig. 3. The etch depth $(\\mathrm{\\AA})$ , etch depth per cycle $(\\mathrm{\\AA / cycle})$ of $\\mathrm{Al}_2\\mathrm{O}_3$ , and the rms roughness of the etched $\\mathrm{Al}_2\\mathrm{O}_3$ surface measured as a function of the number of ALET etch cycles at $\\mathrm{BCl}_3$ gas flow rate of $100~\\mathrm{sccm}$ during the 1st adsorption step and at 1st grid voltage of $100\\mathrm{V}$ during the 3rd desorption step as the $\\mathrm{Al}_2\\mathrm{O}_3$ ALET condition.","id":"test/atomic-layer-etching/experimental-usecase/27/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/27/fig_3","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between etch depth, etch rate, and surface roughness against the number of ALET cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of ALET Cycles | Etch Depth (Å) | Etch Rate (Å/cycles) | Surface Roughness (Å) |\\n|---|---|---|---|\\n| 50 | 50 | 1.00 | 4.0 |\\n| 100 | 100 | 1.00 | |\\n| 150 | 150 | 1.10 | 4.5 |\\n| 250 | 260 | 1.10 | 5.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"250.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 220 Å.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch rate remained practically constant at 1.0 Å/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The surface roughness only changed slightly from 4.0 to 5.0 Å over 250 ALET cycles.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":2,"width":799,"height":447}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/Atomic layer etching of Al2O3 using BCl3Ar.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":806,"height":450,"image_format":"jpeg","image_sha256":"aab78399d7e1505cbc68d1aa23b5763a7aa1ce49c8448b7918522f30c45d7b0e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_3_figure_2.jpg","caption":"Figure 2. (a) Change of the $\\mathrm{S / Mo}$ ratio and the relative Cl atomic percentage on the $\\mathrm{MoS}_2$ surface that was measured as a function of the $\\mathrm{Ar^{+}}$ -ion exposure time (15-200 s) using XPS during the desorption step of $\\mathrm{MoS}_2$ ALE for the bilayer $\\mathrm{MoS}_2$ b) Change of the $\\mathrm{S / Mo}$ ratio and the relative Cl atomic percentage on the $\\mathrm{MoS}_2$ surface that was measured as a function of the $\\mathrm{Ar^{+}}$ -ion exposure time up to $30~\\mathrm{s},$ similar to (a).A further exposure to the $\\mathrm{Ar^{+}}$ ion of $200~\\mathrm{s}$ was performed after the annealing TA); after $30~\\mathrm{s}$ of $\\mathrm{Ar^{+}}$ ion exposure time (at $30~\\mathrm{s},$ it appeared that the top S of the $\\mathrm{MoS}_2$ had been removed), a further $\\mathrm{Ar^{+}}$ ion desorption was carried out after the $\\mathrm{MoS}_2$ sample was annealed at $250^{\\circ}C$ for $45\\mathrm{min}$ in a vacuum to remove the Cl radical on the $\\mathrm{MoS}_2$ surface. The experiment was repeated seven times, and the data were averaged. P indicates the pristine $\\mathrm{MoS}_2$ state, and Cl represents $\\mathrm{MoS}_2$ after Cl-radical adsorption.","id":"test/atomic-layer-etching/experimental-usecase/3/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/3/figure_2","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relative atomic percentage of chlorine (Cl at %) and the ratio of sulfur to molybdenum (S/Mo) against exposure time in seconds. The data points are labeled with 'Sulfur removed' and 'Molybdenum removed' indicating specific conditions, to explain the trends in the ratio of S/Mo.\"},{\"panel_id\":\"b\",\"text\":\"The chart shows the relative atomic percentage of chlorine (Cl at %) and the ratio of sulfur to molybdenum (S/Mo) against exposure time in seconds. A red arrow indicates 'Annealing (250°C, 45min)' s.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Exposure time (sec) | P | Cl | 15 | 30 | 45 | 60 | 90 | 120 | 200 |\\n|---|---|---|---|---|---|---|---|---|---|\\n| Relative atomic percentage (%) | 0 | 60 | 45 | 30 | 20 | 10 | 5 | 0 | 0 |\\n| Ratio of S/Mo | 2.0 | 2.0 | 1.8 | 1.65 | 1.9 | 2.3 | 2.2 | 2.0 | 2.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Exposure time (sec) | P | Cl | 15 | 30 | TA | 60 | 90 | 120 | 200 |\\n|---|---|---|---|---|---|---|---|---|---|\\n| Relative atomic percentage (%) | 0 | 60 | 45 | 30 | 0 | 0 | 0 | 0 | 0 |\\n| Ratio of S/Mo | 2.0 | 2.0 | 1.8 | 1.7 | 1.7 | 1.7 | 1.7 | 1.7 | 1.7 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ideal ratio is 2.0, as the oxidation state of Mo is +4 and that of sulfer is -2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"120 s.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, this will not happen as the annealing fixes the S/Mo ratio 1.7, which should be 2.0 for high quality MoS2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Argon ions bombard the surface and remove Cl from the surface together with sulfur.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":668,"height":479},{"panel_id":"b","x":2,"y":493,"width":667,"height":475}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/Atomic Layer Etching Mechanism of MoS2 for Nanodevices.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":675,"height":970,"image_format":"jpeg","image_sha256":"eb16ed660bbdc55d62009e193b300704f69ea9a2a72ad7ff73cb90fa7582068d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_41_fig_5.jpg","caption":"FIG. 5. Thickness of $\\text{TiO}_2$ and EPC for ten cycles of TiN during the oxidation step as (a) a function of temperature, with a constant RF power of 15 W and (b) a function of RF power, with a constant temperature of $100^{\\circ}C$ The standard process conditions for the oxidation step used $O_2$ at 5 SCCM, 0.05 Torr, $100^{\\circ}C$ and 15 W, and the fluorination step used $\\mathbb{CF}_4$ at 2 SCCM, 0.03 Torr, $100^{\\circ}C$ and 15 W. At the removal step, the temperature was increased to $150^{\\circ}C$ with an Ar of 50 SCCM for 30 s without RF power.","id":"test/atomic-layer-etching/experimental-usecase/41/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/41/fig_5","subset":"multi-axis-chart","split":"test","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure plots estimated TiO₂ thickness and etch per cycle (EPC) of TiN versus oxidation temperature at 15 W RF power. Both quantities increase with temperature, showing that stronger oxidation produces thicker TiO₂ and higher EPC.\"},{\"panel_id\":\"b\",\"text\":\"The subfigure plots estimated TiO₂ thickness and EPC versus RF power at 100 °C. Increasing RF power leads to larger TiO₂ thickness and EPC, indicating a close correlation between oxide growth and etch-per-cycle performance.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Estimated TiO₂ thickness (nm) | TiN Etch per cycle (nm/cycle) |\\n|------------------|-------------------------------|---------------------------|\\n| 50 | 0.30 | 0.25 |\\n| 100 | 0.50 | 0.45 |\\n| 150 | 0.80 | 0.75 |\\n| 200 | 1.20 | 1.10 |\"},{\"panel_id\":\"b\",\"text\":\"| RF power (W) | Estimated TiO₂ thickness (nm) | TiN Etch per cycle (nm/cycle) |\\n|--------------|-------------------------------|---------------------------|\\n| 10 | 0.25 | 0.25 |\\n| 15 | 0.50 | 0.50 |\\n| 25 | 0.90 | 0.85 |\\n| 50 | 1.95 | 1.75 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In (a), both quantities rise with temperature: TiO₂ thickness increases from ~0.30 nm (50 °C) to ~1.2–1.25 nm (200 °C), and EPC increases from ~0.25 to ~1.1 nm/cycle. The two curves follow similar upward trends, indicating a strong positive association between oxide growth and EPC under the tested oxidation conditions\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 200 °C.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The EPC of TiN increases steadily with RF power(approximately ~0.2–0.25 at 10 W up to ~1.7–1.8 nm/cycle at 50 W).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. EPC is consistently slightly below (or very close to) the TiO₂ thickness at each power setting.\"}]}]","bbox":[{"panel_id":"a","x":53,"y":10,"width":570,"height":420},{"panel_id":"b","x":693,"y":10,"width":558,"height":420}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/Plasma atomic layer etching for titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":1253,"height":431,"image_format":"jpeg","image_sha256":"bef7d5d7337b157fc0bb6c13f0acab97e56786e14593f945ada42b1673531e4b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/multi-axis-chart/train/metadata.jsonl b/subsets/multi-axis-chart/train/metadata.jsonl index 3320e2d98c8d0dad0bc36a93250ba2a31b97502e..a5d5bdc43811d55872d233f300e63582afb093ff 100644 --- a/subsets/multi-axis-chart/train/metadata.jsonl +++ b/subsets/multi-axis-chart/train/metadata.jsonl @@ -1,51 +1,51 @@ -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_13_fig_1.jpg","caption":"FIG. 1. Dependence of the Si content in the $\\mathrm{Ti - Si - N}$ films and deposition thickness per cycle on the $\\mathrm{SiH_4}$ partial pressure for the films grown on $\\mathrm{SiO_2}$ at the substrate temperature of $180^{\\circ}\\mathrm{C}$ . $\\mathrm{Ti - Si - N}$ films were grown by sequential supply of TDMAT for $5 \\mathrm{s}$ , $\\mathrm{SiH_4}$ for $10 \\mathrm{s}$ , and $\\mathrm{NH_3}$ for $10 \\mathrm{s}$ .","id":"train/atomic-layer-deposition/experimental-usecase/13/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/13/fig_1","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/Jae-Sik Min et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":605,"height":519,"image_format":"jpeg","image_sha256":"b35a81d8e759d4a2f739ef56a1e1ba1b6d9e872f0da3939fbc7c8773623d3143","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":601,"height":513}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between the Si content and the film thickness, and the partial pressure of SiH4.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Partial pressure of SiH₄ [Pa] | Si contents [at.%] | Film thickness per cycle [nm/cycle] |\\n|---|---|---|\\n| 0.1 | 17 | 0.25 |\\n| 1 | 15 | 0.23 |\\n| 10 | 18 | 0.21 |\\n| 100 | 19 | 0.19 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the partial pressure increases, so does the Si content, albeit slightly.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At that pressure, the Si content is closer to 15 at% and the film thickness is around 0.3 nm/cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In this case, the Si deposited through MOALD is not comparable with that deposited through MOCVD, because the latter increases logarithmically with the partial pressure of SiH4, which differs with the data shown in the figure.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_13_fig_2.jpg","caption":"FIG. 2. Dependence of the Si content in the $\\mathrm{Ti - Si - N}$ films and deposition thickness per cycle on the $\\mathrm{SiH_4 / NH_3}$ ratio for the films grown on $\\mathrm{SiO_2}$ at the substrate temperature of $180^{\\circ}\\mathrm{C}$ . $\\mathrm{SiH_4}$ and $\\mathrm{NH_3}$ were simultaneously supplied in the sequence of TDMAT for $5\\mathrm{s}$ and $\\mathrm{SiH_4 / NH_3}$ for $10\\mathrm{s}$ . On the contrary, when TDMAT and $\\mathrm{NH_3}$ were alternately supplied without $\\mathrm{SiH_4}$ , the saturated TiN deposition thickness per cycle was $0.44~\\mathrm{nm / cycle}$ .","id":"train/atomic-layer-deposition/experimental-usecase/13/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/13/fig_2","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/Jae-Sik Min et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":608,"height":539,"image_format":"jpeg","image_sha256":"e2b30c1f3b37d695bfdf01d35ae2eebad0fd7e36df3bd9015f8ff20bf025a52b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":602,"height":535}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relation between SiH₄/NH₃ ratio and Si content and film thickness per cycle. As the ratio increases, the Si content increases until it reaches a plateau, while the film thickness per cycle decreases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| SiH₄/NH₃ ratio | Si Contents [at.%] | Film thickness per cycle [nm/cycle] |\\n|---|---|---|\\n| 10⁻² | 1 | 0.38 |\\n| 10⁻¹ | 18 | 0.28 |\\n| 10⁰ | 23 | 0.19 |\\n| 10¹ | 23 | 0.01 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There is an increase in the Si content until SiH4/NH3 ratio of 1 is reached, where a plateau of 23 at% is achieved. Conversely, the film thickness decreases with increasing Si content and SiH4/NH3 ratio.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Saturation is reached at a value of 23 at% when the SiH4/NH3 ratio is 1.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film thickness decreases as the Si content increase, due to a reduction in the number of molecules caused by a SiH4 blocking effect, or NH3 deficiency.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_18_fig_2.jpg","caption":"FIG. 2. (a) SE parameters $(\\Psi ,\\Delta)$ measured on blank Si substrate (solid line) and after 10 cycles $\\mathrm{ZrN}$ deposition (dotted line). (b) The dynamic SE parameter $\\Delta$ measured at $4.0\\mathrm{eV}$ for 10 cycles $\\mathrm{ZrN}$ deposition. Systematic variation in $\\Delta$ with precursor pulse $(\\mathrm{t}_1)$ , plasma exposure $(\\mathrm{t}_3)$ , and inert gas purges $(\\mathrm{t}_2$ and $\\mathrm{t}_4)$ are highlighted.","id":"train/atomic-layer-deposition/experimental-usecase/18/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/18/fig_2","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/Triratna Muneshwar et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":1003,"height":366,"image_format":"jpeg","image_sha256":"f4210e67b9670ff5a81442730500152efe3b346a34cf84ffeec5430209fa7b72","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":13,"y":9,"width":494,"height":357},{"panel_id":"b","x":524,"y":11,"width":479,"height":355}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Spectroscopic ellipsometry parameters Ψ and Δ versus photon energy for a blank Si substrate and after 10 ZrN PEALD cycles. Spectral shifts after deposition confirm ultrathin ZrN film formation and demonstrate SE sensitivity to early-stage growth.\"},{\"panel_id\":\"b\",\"text\":\"Dynamic evolution of ellipsometric parameter Δ at 4.0 eV during 10 PEALD cycles. Periodic, step-like changes in Δ aligned with precursor, plasma, and purge steps provide in-situ evidence of self-limiting, cycle-by-cycle ZrN growth.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Photon Energy (eV) | Δ (°) | Ψ (°) |\\n|---|---|---|\\n| 1.0 | ~175 | ~35 |\\n| 2.0 | ~170 | ~33 |\\n| 3.0 | ~165 | ~32 |\\n| 4.0 | ~150 | ~30 |\\n| 5.0 | ~165 | ~31 |\\n| 6.0 | ~170 | ~32 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Δ (°) |\\n|---|---|\\n| 100 | ~144 |\\n| 200 | ~143 |\\n| 300 | ~141 |\\n| 400 | ~140 |\\n| 500 | ~139 |\\n| 550 | ~138 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The in-situ ellipsometry measurements enable real-time monitoring of ZrN film growth, allowing direct observation of cycle-resolved thickness changes and confirmation of self-limiting behavior. This capability supports precise control of growth per cycle, rapid identification of saturation conditions, and reliable optimization of PEALD parameters for uniform, ultrathin ZrN films.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both Ψ and Δ exhibit systematic spectral shifts after 10 cycles, indicating the formation of an ultrathin ZrN film.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Spectral shift in Ψ and Δ after deposition, Periodic step-like changes in Δ during each ALD cycle, Reproducibility of Δ response across multiple cycles, Distinct Δ responses during precursor and plasma steps\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_27_fig_1.jpg","caption":"Fig. 1. Growth rate and resistivity of TiN films deposited by remote PEALD technique using TDMAT precursor and nitrogen plasma as a function of deposition temperature. Inset of this figure shows the film thickness as a function of process cycles.","id":"train/atomic-layer-deposition/experimental-usecase/27/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/27/fig_1","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/Ju Youn KIM et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":664,"height":469,"image_format":"jpeg","image_sha256":"279593c94d95a41565944df4a37503d9c29cf9d9253f76b169df26f72a6afa9a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":182,"y":21,"width":257,"height":184},{"panel_id":"a","x":3,"y":5,"width":659,"height":463}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between deposition temperature and thickness and resistivity of a material.\"},{\"panel_id\":\"b\",\"text\":\"The line chart displays the thickness of a material as a function of the number of cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition Temperature (°C) | Thickness (nm) | Resistivity (Ω·cm) |\\n|---|---|---|\\n| 175 | 15 | 500 |\\n| 200 | 19 | 450 |\\n| 250 | 19 | 350 |\\n| 300 | 19 | 400 |\\n| 350 | 25 | 500 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Cycles | Thickness (nm) |\\n|---|---|\\n| 20 | 8 |\\n| 40 | 15 |\\n| 60 | 22 |\\n| 80 | 30 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The GPC is 20/50 = 0.4 nm/cycle.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A temperature window is a range of temperatures where the GPC is independent of temperature. The graph shows this between 200 and 300 degrees celcius.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Within the range of 200 to 300 degrees celcius there is a change in resistivity, indicating that the temperature window does not apply for the resistivity.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A possible explaination for more growth at higher temperatures is parasitic CVD due to decomposition of precursor molecules.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_11.jpg","caption":"Figure 11. Time-resolved TS behavior of the GeSe selector devices through fabrication using (a) the conventional ALD process and (b) the ALD-DFM process. Magnified view of the transition region in (b) to the (c) ON-state and (d) OFF-state.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_11","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_11","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"multi-axis chart"},{"panel_id":"d","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":675,"height":622,"image_format":"jpeg","image_sha256":"82e317b84a292fc23be9c22f3a10bd652a321e05a85cecf8b315ab67a4703572","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":15,"y":38,"width":312,"height":270},{"panel_id":"b","x":363,"y":38,"width":312,"height":270},{"panel_id":"c","x":15,"y":354,"width":312,"height":268},{"panel_id":"d","x":363,"y":354,"width":312,"height":268}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a multi-axis chart with voltage and current plotted against time. The voltage and current traces are shown for two different channels, V_Ch1 and V_DUT, and I_DUT respectively where there is a peak after 2 micro seconds.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows a multi-axis chart with voltage and current plotted against time. The voltage and current traces are shown for two different channels, V_Ch1 and V_DUT, and I_DUT respectively where there is a peak after 2 micro seconds.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows a multi-axis chart with voltage and current plotted against time. The voltage and current traces are shown for two different channels, V_Ch1 and V_DUT, and I_DUT respectively in the build up phase for the switch.\"},{\"panel_id\":\"d\",\"text\":\"The figure shows a multi-axis chart with voltage and current plotted against time. The voltage and current traces are shown for two different channels, V_Ch1 and V_DUT, and I_DUT respectively for the settling after the switch.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (µs) | Voltage (V) | Current (mA) |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 0.5 | 0.5 | 0 |\\n| 1 | 1 | 0 |\\n| 1.5 | 2 | 3 |\\n| 2 | 3 | 5 |\\n| 2.5 | 2 | 3 |\\n| 3 | 1 | 0 |\\n| 3.5 | 0.5 | 0 |\\n| 4 | 0 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (µs) | Voltage (V) | Current (mA) |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 0.5 | 1 | 0 |\\n| 1 | 1.8 | 0 |\\n| 1.5 | 2 | 12 |\\n| 2 | 2 | 20 |\\n| 2.5 | 1.5 | 10 |\\n| 3 | 1.2 | 5 |\\n| 3.5 | 1 | 0 |\\n| 4 | 0 | 0 |\"},{\"panel_id\":\"c\",\"text\":\"| Time (µs) | Voltage (V) | Current (mA) |\\n|---|---|---|\\n| 0.9 | 1.9 | 0 |\\n| 1 | 2 | 0 |\\n| 1.1 | 1.5 | 8 |\\n| 1.2 | 1.9 | 8 |\"},{\"panel_id\":\"d\",\"text\":\"| Time (µs) | Voltage (V) | Current (mA) |\\n|---|---|---|\\n| 3.0 | 1.2 | 5 |\\n| 3.1 | 1.2 | 3 |\\n| 3.2 | 1.2 | 0 |\\n| 3.3 | 1.0 | 0 |\\n| 3.4 | 0.8 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 microseconds\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2.1 V.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The moment at which the GeSe transitions from a resistive phase to a low resistance mode.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_4.jpg","caption":"Figure 4. (a) Layer densities versus cycle number to confirm the saturation growth rate without an incubation cycle. (b) Effect of the substrate temperature on the growth rate.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_4","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":1048,"height":458,"image_format":"jpeg","image_sha256":"fb327650cc20cc06c97109a92e542c76603d522aa76e401420908901195e9697","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":46,"width":508,"height":408},{"panel_id":"b","x":522,"y":44,"width":521,"height":411}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the layer density and composition of GeSe(1-x) as a function of cycle number for SiO2, TiN, and SiO2, DFM.\"},{\"panel_id\":\"b\",\"text\":\"The chart illustrates the growth rate and composition of GeSe(1-x) as a function of substrate temperature for SiO2 and TiN.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle Number | Layer Density (µg/cm²) | x in GeSe(1-x) |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 100 | 5 | 0.5 |\\n| 200 | 9 | 0.5 |\\n| 400 | 17 | 0.5 |\"},{\"panel_id\":\"b\",\"text\":\"| Substrate Temperature (°C) | Growth rate (ngcm-2cy-1) | x in GeSe(1-x) |\\n|---|---|---|\\n| 70 | 57 | 0.5 |\\n| 90 | 26 | 0.5 |\\n| 110 | 19 | 0.5 |\\n| 130 | 10 | 0.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For perfect ALD, every cycle, the amount of deposited material is the same, meaning there should be a linear relation between the cycle number and the layer density.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For all substrates and dosing methods the composition is the same, i.e. Ge:Se is 1:1. This means that differently dosing the precursors will not result in different composition.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This can be caused by desorption of adsorbed species leading to less film growth.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With increasing temperature the Ge contribution increases in the film, meaning there is less Se. This means that the Se precursor desorbs more easily.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_31_figure_3.jpg","caption":"Figure 3. Growth rate and resistivity vs precursor exposure time of PE-ALD Co using (a) $\\mathrm{CoCp(CO)_2}$ and (b) $\\mathrm{CoCp_2}$ as a Co precursor, respectively.","id":"train/atomic-layer-deposition/experimental-usecase/31/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/31/figure_3","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/Han-Bo-Ram Lee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":544,"height":744,"image_format":"jpeg","image_sha256":"05a494ef100bcaf930a71c2c186e8a732fa89c0bcfa2edbb38b0510fef0ea07b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":542,"height":370},{"panel_id":"b","x":3,"y":386,"width":536,"height":355}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"For PE-ALD Co on SiO₂ using CoCp(CO)₂ at 300 °C, the growth rate increases with substrate exposure time and reaches a maximum at longer exposure, while the resistivity initially decreases and then increases at high exposure times, indicating an optimal time window for achieving low-resistivity cobalt films.\"},{\"panel_id\":\"b\",\"text\":\"In the PE-ALD Co process using CoCp₂ at 300 °C, the growth rate increases rapidly at short exposure times and then saturates, while the resistivity remains relatively low and stable with increasing exposure time, suggesting a more robust and self-limiting growth behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| tS (s)|Growth Rate (Å/cycle)|Resistivity (µΩcm)|\\n|------------------|---------------------|------------------|\\n|0|0|0|\\n|1|2|250|\\n|2|1|100|\\n|3|0.5|50|\\n|4|0|25|\"},{\"panel_id\":\"b\",\"text\":\"| tS (s)|Growth Rate (Å/cycle)|Resistivity (µΩcm)|\\n|------------------|---------------------|------------------|\\n|0|0|0|\\n|2|0.5|250|\\n|4|0.5|150|\\n|6|0.5|100|\\n|8|0.5|50|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"NO\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"CoCp₂.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Growth saturation confirms true ALD behavior, ensuring precise thickness control and excellent conformality on complex device structures. The consistently low resistivity obtained with CoCp₂ indicates high-purity metallic cobalt, which is essential for interconnect and contact applications in advanced CMOS technology. Together, these properties make CoCp₂ a suitable precursor for scalable and reliable cobalt deposition.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Lack of growth-rate saturation, Strong increase in resistivity at longer exposure times, Unstable electrical properties, Evidence of CVD-like or decomposition-driven growth\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_36_fig_10.jpg","caption":"Fig. 10 a Transfer characteristics and b log $I_{\\mathrm{DS}}$ vs $V_{\\mathrm{GS}}$ plots of the conventional HEMT and the $\\mathrm{Ga_2O_3}$ MOS-HEMT","id":"train/atomic-layer-deposition/experimental-usecase/36/fig_10","sample_id":"atomic-layer-deposition/experimental-usecase/36/fig_10","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/Huan-Yu Shih et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":797,"height":455,"image_format":"jpeg","image_sha256":"b224e365c23d3b47e197db4d9638e0287052928f96bd46a32104e259abddafa1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":26,"width":427,"height":427},{"panel_id":"b","x":453,"y":33,"width":344,"height":422}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the drain current (IDS) and transconductance (gm) for both Ni/Au-HEMT and Ga2O3 MOS-HEMT as a function of gate-source voltage (VGS) with a VDS value of 8V.\"},{\"panel_id\":\"b\",\"text\":\"The chart displays the drain current (IDS) of Ni/Au-HEMT and Ga2O3 MOS-HEMT as a function of gate-source voltage (VGS) on a logarithmic scale with a VDS value of 8V.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| IDS (mA/mm) | Ni/Au-HEMT | Ga2O3 MOS-HEMT |\\n| --- | --- | --- |\\n|-6| 0 | 0 |\\n|-4| 0 | 0 |\\n|-2| 300 | 400 |\\n|0| 500 | 800 |\\n|2| 800 | 1000 |\"},{\"panel_id\":\"b\",\"text\":\"| IDS (mA/mm) | Ni/Au-HEMT | Ga2O3 MOS-HEMT |\\n| --- | --- | --- |\\n| -6 | 10^-3 | 10^-4 |\\n| -4 | 10^-1 | 10^2 |\\n| -2 | 10^2 | 10^2 |\\n| 0 | 10^3 | 10^3 |\\n| 2 | 10^3 | 10^3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ni/Au-HEMT and Ga2O3 MOS-HEMT were both performed with a V_DS value of 8 V.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the subfigure a, the Ga2O3 MOS-HEMT has higher transcondutance values.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The samples remain constant until approximately -4 V, at which point they both increases and reach a plateau.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The subthreshold swing parameter is higher for the Ni/Au-HEMT sample with a value of 188 mV/dec.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_36_fig_13.jpg","caption":"Fig. 13 Microwave power characteristics of the conventional HEMT and the $\\mathrm{Ga_2O_3}$ MOS-HEMT","id":"train/atomic-layer-deposition/experimental-usecase/36/fig_13","sample_id":"atomic-layer-deposition/experimental-usecase/36/fig_13","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/Huan-Yu Shih et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":625,"height":475,"image_format":"jpeg","image_sha256":"86f1078552c1840ea35b64569c2e45185c9fda76b588236b05b1970d7ed1e736","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":10,"width":621,"height":465}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the output power and power drain, and power added efficiency as a function of the input power at a frequency of 2.4G and drain source voltage of 16V, for Ni/Au-HEMT and Ga2O3 MOS-HEMT.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Input Power (dBm) | G_p Ga2O3 | G_p Ni/Au | P_out Ga2O3 | P_out Ni/Au | P.A.E. Ni/Au | P.A.E. Ga2O3 |\\n| --- | --- | --- | --- | --- | --- | --- |\\n| -25 | 25 | 24 | 0 | 0 | 0 | 0 |\\n| -20 | 25 | 24 | 4 | 3 | 0 | 0 |\\n| -15 | 25 | 24 | 9 | 8 | 0 | 0 |\\n| -10 | 25 | 24 | 15 | 14 | 2 | 2 |\\n| -5 | 25 | 24 | 19 | 18 | 8 | 8 |\\n| 0 | 25 | 24 | 23 | 22 | 25 | 24 |\\n| 5 | 20 | 19 | 20 | 19 | 45 | 35 |\\n| 10 | 15 | 14 | 17 | 16 | 50 | 40 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They were performed at 2.4 G and 16 V.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The output power of both the Ni/Au and G2O3 samples increases with the input power.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At approximately 0 dBm.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_36_fig_5.jpg","caption":"Fig. 5 Refractive index and extinction coefficient of the $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ thin film plotted with respect to the wavelength","id":"train/atomic-layer-deposition/experimental-usecase/36/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/36/fig_5","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/Huan-Yu Shih et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":625,"height":406,"image_format":"jpeg","image_sha256":"36b4445ad8594fa37183fef95eb78420a0c85256a27be6ff107fef6572166c1e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":12,"width":621,"height":393}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the extinction coefficient and refractive index of a material as a function of wavelength. Both of them decreases as the wavelength value increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | Extinction coefficient | Refractive index |\\n|----------------|------------------------|------------------|\\n| 300 | 0 | 2.2 |\\n| 400 | 0 | 2.0 |\\n| 500 | 0 | 1.9 |\\n| 600 | 0 | 1.9 |\\n| 700 | 0 | 1.9 |\\n| 800 | 0 | 1.9 |\\n| 900 | 0 | 1.9 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The refractive index (n) and extinction coefficient (k) of the Ga2O3 thin film.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At lower wavelength values, the extinction coefficient is 0.15. However, after 300 nm, it decreases rapidly and significantly to 0.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The refractive index exhibit higher values than the extinction coefficient.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both can be obtained using different models and spectroscopic ellipsometry measurements.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_4_fig_1.jpg","caption":"Fig. 1. Growth rate and refractive index of $\\mathrm{HfO_2}$ films as a function of hafnium precursor pulse length. The water pulse and purge times were $0.5\\mathrm{s}$ . The error bars express the variation of the refractive index in each sample.","id":"train/atomic-layer-deposition/experimental-usecase/4/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/4/fig_1","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":642,"height":403,"image_format":"jpeg","image_sha256":"dc6e84ee27a5c559e30e7fc0891ee55b534353bdc7283062a6d82015c1184669","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":641,"height":399}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the growth rate and refractive index at 580 nm of HfO₂ deposited on borosilicate glass as a function of Hf[N(CH₃)(C₂H₅)₄] pulse length at a growth temperature of 250 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Hf[N(CH3)(C2H5)]4 PULSE LENGTH, s | GROWTH RATE, nm/cycle | REFRACTIVE INDEX AT 580 nm |\\n|---|---|---|\\n| 0.2 | 0.08 | 2.08 |\\n| 0.4 | 0.09 | 2.09 |\\n| 0.6 | 0.09 | 2.09|\\n| 0.8 | 0.09 | 2.09 |\\n| 1.0 | 0.09 | 2.08 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It first increases and then decreases after having reached a maximal refractive index of about 2.10 after 0.4 – 0.6 seconds. This can arise from the thermal decomposition of Hf[N(CH3)(C2H5)]4. This thermal decomposition, which may become more significant during longer exposure times, may slightly reduce the film density or change its composition. Although the changes in refractive index are measurable, they are however very small.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Borosilicate glass.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"250 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After 0.4 seconds, the growth rate no longer is affected by the pulse length, indicating that the surface reactions are self-limiting.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_4_fig_3.jpg","caption":"Fig. 3. Growth rate and refractive index of $\\mathrm{HfO_2}$ films as a function of growth temperature.","id":"train/atomic-layer-deposition/experimental-usecase/4/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/4/fig_3","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":644,"height":406,"image_format":"jpeg","image_sha256":"9fda5b98f5039166a81521e8b225fe63a60bd6ade0d2baa6de95e4b553233980","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":642,"height":399}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the growth rate of HfO₂ on borosilicate glass at various temperatures, along with the corresponding refractive index at 580 nm.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| GROWTH TEMPERATURE, °C | GROWTH RATE, nm/cycle | REFRACTIVE INDEX AT 580 nm |\\n|---|---|---|\\n| 150 | 0.10 | 2.08 |\\n| 175 | 0.09 | 2.08 |\\n| 200 | 0.09 | 2.10 |\\n| 225 | 0.09 | 2.09 |\\n| 250 | 0.09 | 2.09 |\\n| 275 | 0.10 | 2.08 |\\n| 300 | 0.12 | 2.06 |\\n| 325 | 0.15 | 2.05 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"150 to 325 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.4 s Hf[N(CH3)(C2H5)]4 exposure, 0.5 s purge, 0.5 s H2O exposure, 0.5 s purge.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The growth rate as a function of temperature is stable/constant from 200 to 250 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It varied between 2.05 and 2.10.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_4_fig_8.jpg","caption":"Fig. 8. Selected $CV$ and dissipation curves measured for $\\mathrm{Al / HfO_2 / Si}$ capacitor structures at $AC$ signal frequency of $500\\mathrm{kHz}$ . Labels indicate $\\mathrm{HfO_2}$ growth temperatures. The thickness of the films grown at $200^{\\circ}\\mathrm{C}$ and $300^{\\circ}\\mathrm{C}$ are $133\\mathrm{nm}$ and $178\\mathrm{nm}$ , respectively.","id":"train/atomic-layer-deposition/experimental-usecase/4/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/4/fig_8","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":558,"height":358,"image_format":"jpeg","image_sha256":"4603bedd3a706fba1141ba86b271103093fde2767f9d671d9647f84f37511ec4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":555,"height":354}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays capacitance and dissipation against bias voltage for two different growth temperatures of HfO₂.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| BIAS VOLTAGE, V | 200 °C, CAPACITANCE, nF | 300 °C, CAPACITANCE, nF | 200 °C, DISSIPATION, D | 300 °C, DISSIPATION, D |\\n|---|---|---|---|---|\\n| -4 | 0.16 | | 0.05 | |\\n| -3 | 0.16 | 0.15 | 0.05 | 0.1 |\\n| -2 | 0.15 | 0.14 | 0.05 | 0.1 |\\n| -1 | 0.12 | 0.12 | 0.1 | 0.5 |\\n| 0 | 0.04 | 0.04 | 0.05 | 0.025 |\\n| 1 | 0.03 | 0.04 | 0.025 | 0.025 |\\n| 2 | 0.03 | | 0.025 | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is 0.16 nF at -4 V and 0.03 nF at 2.5 V.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is 0.15 nF at -4 V and 0.04 nF at 1.5 V.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At about 0.5 and -0.5 V.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At about -0.25 and -0.5 V.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_40_fig_2.jpg","caption":"FIG. 2. Dependence of the growth rate and silicon content in the $\\mathrm{Ti - Si - N}$ films on the $\\mathrm{SiH_4}$ pulse time. The films were grown on $\\mathrm{SiO_2}$ at $350^{\\circ}\\mathrm{C}$ with the sequential supply of $\\mathrm{TiCl_4}$ for $1\\mathrm{s}$ , $\\mathrm{SiH_4}$ for $0\\mathrm{s}\\sim 15\\mathrm{s}$ , and $\\mathrm{N}_2 / \\mathrm{H}_2 / \\mathrm{Ar}$ plasma for $10\\mathrm{s}$ . The partial pressure of $\\mathrm{SiH_4}$ was fixed at 0.1 torr.","id":"train/atomic-layer-deposition/experimental-usecase/40/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/40/fig_2","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":637,"height":561,"image_format":"jpeg","image_sha256":"4a1f3fd55c02d66873772763b31497ca784c5cc9dec3e25da07ed5573e0e1f72","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":634,"height":555}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multi-axis chart showing the dependence of growth per cycle (left axis) and silicon atomic content (right axis) on SiH₄ pulse time during plasma-enhanced ALD of Ti–Si–N at 350 °C. Both quantities increase rapidly at short pulse times and saturate for SiH₄ exposures of ~8 s or longer, reaching ~0.7 Å/cycle growth and ~9–15 at.% Si, indicating self-limiting surface reactions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| SiH₄ pulse time (s) | Thickness per cycle (Å/cycle, left axis) | Si content (at.%, right axis) |\\n|--------------------|-------------------------------------------|-------------------------------|\\n| 0 | ~0.45 | ~0.0 |\\n| 1 | ~0.50 | ~4.0 |\\n| 2 | ~0.55 | ~5.0 |\\n| 4 | ~0.60 | ~7.5 |\\n| 6 | ~0.65 | ~8.0 |\\n| 8 | ~0.70 | ~9.0 |\\n| 12 | ~0.70 | ~9.0 |\\n| 16 | ~0.70 | ~9.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both the growth per cycle and the silicon content increase rapidly as the SiH₄ pulse time is extended from 0 to about 8 s. This reflects increased surface reaction completion during the SiH₄ exposure. Beyond this range, further increases in pulse time do not significantly change either quantity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Once the surface reactive sites available for Si incorporation are fully occupied during the SiH₄ half-cycle, additional precursor exposure cannot introduce more silicon. This reflects the self-limiting surface chemistry characteristic of ALD, where adsorption and reaction terminate once saturation is reached.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 8 s.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_40_fig_3.jpg","caption":"FiG. 3. Dependence of the growth rate and silicon content in the $\\mathrm{Ti - Si - N}$ films on the $\\mathrm{SiH_4}$ pulse time by different reactant exposure sequence. The reactants were supplied in the sequence of $\\mathrm{SiH_4}$ for $0\\mathrm{s} - 15\\mathrm{s}$ , $\\mathrm{TiCl_4}$ for $1\\mathrm{s}$ , and $\\mathrm{N}_2 / \\mathrm{H}_2 / \\mathrm{Ar}$ plasma for $10\\mathrm{s}$ .","id":"train/atomic-layer-deposition/experimental-usecase/40/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/40/fig_3","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":436,"height":386,"image_format":"jpeg","image_sha256":"1cd211bc080a849c0c81f889ff8b11d69473d749969bc26d60567ccf3632b57a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":433,"height":382}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multi-axis chart showing growth per cycle (left axis) and silicon atomic content (right axis) in plasma-enhanced ALD Ti–Si–N films deposited using a reversed reactant sequence (SiH₄ → TiCl₄ → N₂/H₂/Ar plasma). Both quantities increase with SiH₄ pulse time at short exposures and saturate at approximately 0.60–0.62 Å/cycle and 11–12 at.% Si for pulse times of ~8–10 s, indicating self-limiting surface reactions under this sequence.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|SiH4 Pulse Time (s) |Thickness (S-T-N) [Å/cycle]|Si Content (S-T-N) [at.%]|\\n|--------------------|-------------------------------|-------------------|\\n| 0 | ~0.46 | – |\\n| 2 | ~0.50 | ~7.5 |\\n| 4 | ~0.55 | ~8.0 |\\n| 6 | ~0.60 | ~10.0 |\\n| 8 | ~0.60 | ~11.0 |\\n| 10 | ~0.62 | ~12.0 |\\n| 12 | ~0.60 | ~12.0 |\\n| 14 | ~0.60 | ~12.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 8–10 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The silicon content increases rapidly at short SiH₄ pulse times, rising from below 8 at.% at 2 s to about 10–11 at.% by 6–8 s. Beyond this range, the silicon content plateaus near 11–12 at.% despite further increases in pulse time, indicating saturation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"When SiH₄ is pulsed first, its interaction with the surface is limited by the initial surface chemistry. The subsequent TiCl₄ pulse can occupy or replace reactive sites before nitrogen incorporation, reducing the number of sites available for silicon retention. This leads to lower final silicon incorporation compared with sequences where TiCl₄ primes the surface first.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_10.jpg","caption":"Fig. 10. Densities of TiN ALD films measured using QCM and surface profilometry measurements for long, medium and short reactant pulse sequences at deposition temperatures of $60 - 240^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_10","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_10","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":672,"height":620,"image_format":"jpeg","image_sha256":"e31cb2de14954c0e6c7371dd16a6fe0b582d09233f93f580db3cc762e7a3f2d1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":669,"height":620}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows TiN ALD film density and porosity as functions of deposition temperature for short, medium, and long reactant pulse sequences. Film density increases with temperature for all pulse lengths, while porosity decreases correspondingly, indicating densification. Short pulse sequences exhibit the strongest temperature-driven densification, reaching ~3.0 g/cm³ at 240 °C with porosity near ~40%. Medium pulses show moderate densification, whereas long pulses yield comparatively low-density, high-porosity films at intermediate temperatures. Overall, the data indicate a strong coupling between pulse timing and thermal activation of film densification.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Pulse Length | Density (g/cm³) | Porosity (%) |\\n|---|---|---|---|\\n| 60 | Short | 1.8 | 65 |\\n| 60 | Medium | 1.5 | 70 |\\n| 120 | Short | 2.1 | 60 |\\n| 120 | Medium | 1.6 | 70 |\\n| 180 | Short | 2.6 | 50 |\\n| 180 | Medium | 2.0 | 60 |\\n| 180 | Long | 1.2 | 80 |\\n| 240 | Short | 3.0 | 42 |\\n| 240 | Medium | 2.2 | 60 |\\n| 240 | Long | 2.6 | 50 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing temperature leads to higher TiN film density for all pulse lengths. The trend is strongest for short pulses, where density rises sharply with temperature. Medium pulses show a more gradual increase, while long pulses remain relatively low in density at intermediate temperatures. This indicates temperature-activated densification that depends on pulse timing.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Short pulse sequences.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Higher density corresponds to lower porosity\\n-Lower density corresponds to higher porosity\\n-The inverse relationship holds for all pulse lengths\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_4.jpg","caption":"Fig. 4. Mass deposited vs. number of AB cycles measured using the in situ QCM at $120^{\\circ}\\mathrm{C}$ for the long reactant pulses with a timing sequence of (100-10-20-30).","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_4","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":664,"height":661,"image_format":"jpeg","image_sha256":"f168a87bfc15c9d7c7eda3a85de7f03dc5a49b3dfbb847b6c872d80086044f88","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":656,"height":655}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows in situ QCM measurements of mass deposited during TiN ALD at 120 °C using long reactant pulses (100–10–20–30). The mass increases approximately linearly with the number of AB cycles, while the raw trace exhibits step-like features corresponding to individual precursor exposures. The equivalent TiN thickness, derived from the mass uptake, also increases linearly with cycle number. Together, these trends indicate stable, cycle-by-cycle growth consistent with self-limiting ALD behavior under long-pulse conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| AB Cycles | Mass Deposited (ng/cm²) | TiN Thickness (Å) |\\n|---|---|---|\\n| 0 | ~0 | ~0 |\\n| 1 | ~120 | ~1.5 |\\n| 3 | ~280 | ~4.5 |\\n| 5 | ~420 | ~7.0 |\\n| 7 | ~560 | ~10.0 |\\n| 10 | ~800 | ~15.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Each step corresponds to an individual precursor exposure within an AB cycle, producing a discrete mass increase. This staircase behavior is characteristic of self-limiting surface reactions rather than continuous CVD-like growth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It increases approximately linearly.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Linear mass accumulation indicates that each cycle deposits a nearly constant amount of material. This reflects uniform surface saturation and confirms that the process is operating in a true ALD regime.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_5.jpg","caption":"Fig. 5. (a) Mass deposition rate vs. TDMAT exposure time at $120^{\\circ}\\mathrm{C}$ on an initial TiN surface terminated with $\\mathrm{NH}_x^*$ species. (b) Mass deposition rate vs. $\\mathrm{NH}_3$ exposure time at $120^{\\circ}\\mathrm{C}$ on an initial TiN surface terminated with $\\mathrm{T}_2(\\mathrm{N}(\\mathrm{CH}_3)_2)_x^*$ species.","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_5","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":656,"height":1203,"image_format":"jpeg","image_sha256":"b7b5907bb513dbb65b54d4b3302bff4d08bda9343f83135405c2c5ffa24f8625","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":598,"width":652,"height":601},{"panel_id":"a","x":0,"y":1,"width":652,"height":587}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows ALD saturation behavior for TiN growth at 120 °C by varying the exposure time of each reactant while monitoring mass deposition rate and equivalent thickness growth per cycle. In panel (a), increasing TDMAT exposure time produces a rapid rise in deposition rate at short times followed by a slower approach to a near-saturation regime at longer exposures, consistent with progressively more complete surface reaction of the metal precursor on an NHx*-terminated TiN surface.\"},{\"panel_id\":\"b\",\"text\":\"In panel (b), increasing NH₃ exposure time similarly increases deposition rate and then reaches a clear plateau around ~20 s, indicating saturation of the nitridation/ligand-exchange step on a surface terminated with precursor fragments. The plateau regions demonstrate self-limiting ALD chemistry, while the “short/medium/long” regimes highlight the exposure windows that transition from incomplete reaction to near-saturated growth.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TDMAT Exposure Time (s) | Mass Deposition Rate (ng/cm²/cycle) | TiN Growth Rate (Å/cycle) |\\n|---|---|---|\\n| 0 | ~0 | ~0.0 |\\n| 5 | ~39 | ~0.8 |\\n| 20 | ~46 | ~0.9 |\\n| 50 | ~52 | ~1.0 |\\n| 100 | ~55 | ~1.05 |\\n| 200 | ~60 | ~1.2 |\"},{\"panel_id\":\"b\",\"text\":\"| NH₃ Exposure Time (s) | Mass Deposition Rate (ng/cm²/cycle) | TiN Growth Rate (Å/cycle) |\\n|---|---|---|\\n| 0 | ~5 | ~0.1 |\\n| 2 | ~41 | ~0.8 |\\n| 5 | ~49 | ~0.9 |\\n| 10 | ~55 | ~1.05 |\\n| 20 | ~63 | ~1.2 |\\n| 40 | ~63 | ~1.2 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plateau indicates that ligand removal and nitridation reactions have reached completion across the surface. All available precursor-derived fragments have been converted into a stable Ti–N bonding environment. This confirms that the NH₃ half-reaction is self-limiting.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Knowing the saturation exposure allows selection of the shortest NH₃ pulse that still achieves complete surface reaction. This minimizes cycle time and reagent usage while maintaining consistent growth. Such optimization is critical for scalable and cost-efficient ALD processing.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At short exposures, reactant delivery is insufficient to fully react with all available surface sites, so growth is limited by incomplete surface coverage. As exposure time increases, more molecules reach the surface until reactive sites become saturated. Once saturation is achieved, additional exposure does not significantly increase growth, producing the characteristic ALD plateau.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TiN growth rate increases rapidly at short exposure times and then gradually levels off at longer exposures.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_6.jpg","caption":"Fig. 6. Arrhenius plot of TiN ALD mass deposition rates for long, medium and short reactant pulse sequences at deposition temperatures of $60 - 240^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_6","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":670,"height":664,"image_format":"jpeg","image_sha256":"347c179c65e6b4cc65edd0e6f8a53ade6bac2cd682cc1a93ea4966c6d684d4bd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":5,"width":668,"height":655}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents an Arrhenius plot of TiN ALD mass deposition rates for long, medium, and short reactant pulse sequences over a deposition temperature range of 60–240 °C. The x-axis is expressed as 1000/T, and distinct linear segments are annotated with apparent activation energies. The long pulse sequence shows the steepest slope at high temperature, while the short pulse sequence exhibits a weaker temperature dependence across the same range. These trends suggest that pulse duration strongly influences the temperature sensitivity of the ALD growth process.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulse sequence | 1000/T (K⁻¹) | Deposition Temperature (°C) | Mass deposition rate (ng/cm²/cycle) |\\n|---|---|---|---|\\n| Long (100-10-20-30) | ~1.95 | 240 | ~900 |\\n| Long (100-10-20-30) | ~2.05 | 210 | ~350 |\\n| Long (100-10-20-30) | ~2.20 | 180 | ~160 |\\n| Long (100-10-20-30) | ~2.40 | 150 | ~110 |\\n| Long (100-10-20-30) | ~2.60 | 120 | ~75 |\\n| Long (100-10-20-30) | ~2.80 | 90 | ~55 |\\n| Long (100-10-20-30) | ~3.00 | 60 | ~40 |\\n| Medium (20-10-6-10) | ~1.95 | 240 | ~300 |\\n| Medium (20-10-6-10) | ~2.05 | 210 | ~180 |\\n| Medium (20-10-6-10) | ~2.20 | 180 | ~120 |\\n| Medium (20-10-6-10) | ~2.40 | 150 | ~85 |\\n| Medium (20-10-6-10) | ~2.60 | 120 | ~60 |\\n| Medium (20-10-6-10) | ~2.80 | 90 | ~45 |\\n| Medium (20-10-6-10) | ~3.00 | 60 | ~30 |\\n| Short (1-0.5-1-5) | ~1.95 | 240 | ~70 |\\n| Short (1-0.5-1-5) | ~2.05 | 210 | ~55 |\\n| Short (1-0.5-1-5) | ~2.20 | 180 | ~45 |\\n| Short (1-0.5-1-5) | ~2.40 | 150 | ~35 |\\n| Short (1-0.5-1-5) | ~2.60 | 120 | ~28 |\\n| Short (1-0.5-1-5) | ~2.80 | 90 | ~22 |\\n| Short (1-0.5-1-5) | ~3.00 | 60 | ~16 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Labeling activation energies highlights the temperature sensitivity of each linear segment without requiring separate fitting plots. It visually emphasizes that different regimes exhibit different slopes, helping the reader identify transitions in growth behavior directly from the figure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Long pulses: highest apparent activation energy at high temperature.\\n-Medium pulses: intermediate activation energy.\\n-Short pulses: lowest apparent activation energy.\\n-Shorter pulses appear less temperature sensitive overall.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The long pulse sequence.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_7.jpg","caption":"Fig. 7. Mass deposited during one reactant cycle using the long pulse sequence at $120^{\\circ}\\mathrm{C}$ . The quantity $m_0$ is the mass change resulting from TDMAT exposure and purge. The quantity $m_0 + m_1$ is the net mass change resulting from one complete TiN ALD cycle.","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_7","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":655,"height":603,"image_format":"jpeg","image_sha256":"8e28948e43eba96d95d2639b5e7a3bd21dada87252f21da6656b1c68454a7b51","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":653,"height":598}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows in situ QCM mass changes during a single TiN ALD cycle at 120 °C using long reactant pulses. During TDMAT exposure and the first purge, the mass increases by m₀ due to precursor adsorption. Subsequent NH₃ exposure produces an additional mass change, and the final mass after the second purge corresponds to m₀+m₁, the net per-cycle gain. The stepwise features confirm that mass uptake occurs in discrete, self-limiting half-reactions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass Deposited (ng/cm²) | TiN Thickness (Å) | Stage |\\n|---|---|---|---|\\n| 0 | ~0 | ~0.0 | Start |\\n| 100 | ~95 | ~1.6 | End TDMAT exposure |\\n| 110 | ~90 | ~1.5 | End first purge (m₀) |\\n| 130 | ~165 | ~3.0 | End NH₃ exposure |\\n| 160 | ~75 | ~1.3 | End second purge (m₀ + m₁) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"m₀ represents the mass gained during the TDMAT exposure and subsequent purge. It reflects adsorption of TDMAT-derived species on the surface prior to nitridation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"During the NH₃ exposure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Separating these quantities isolates the contributions of precursor adsorption and nitridation/ligand removal. This helps identify which half-reaction controls mass uptake and confirms self-limiting behavior within the cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_52_figure_6.jpg","caption":"Figure 6. Number of atoms deposited per $\\mathrm{nm}^2$ per super-cycle and the Co/Li ratio in the film as a function of the Co/Li dosing ratio $(x)$ as determined by Nuclear reaction analysis (NRA) and Elastic backscattering spectroscopy (EBS). For the Co/Li dosing ratio the amount of Li cycles per super-cycle is kept constant at 1.","id":"train/atomic-layer-deposition/experimental-usecase/52/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/52/figure_6","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/Donders et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":675,"height":448,"image_format":"jpeg","image_sha256":"62773e8f76a25b0d5ba81402dfcc1d6dae4a8b8e01afa7ff1d01a83bb0725692","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":670,"height":441}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the number of atoms per nm² supercycle for Li NRA, Li RBS, and Co RBS measurements, along with the Co/Li atomic ratio, against the Co/Li dosing ratio\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Co/Li dosing ratio (x) | Li NRA (atoms/nm² supercycle) | Li RBS (atoms/nm² supercycle) | Co RBS (atoms/nm² supercycle) | Co/Li atomic ratio |\\n|---|---|---|---|---|\\n| 2 | 5.0 | 4.9 | 1.6 | 0.35 |\\n| 3 | 5.0 | 4.7 | 2.7 | 0.50 |\\n| 4 | 4.8 | 4.5 | 4.0 | 0.80 |\\n| 5 | 5.0 | 6.0 | 4.9 | 0.85 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The amount of Li cycles per super cycle is kept constant at 1\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Co amount per super cycle increases as x increases, and the paper notes it continues to increase roughly linearly with x. The Li amount per super cycle is much less sensitive to x, but the text notes a slight increase in the Li sub cycle deposition rate at higher Co to Li dosing ratios. Together these trends drive the Co to Li atomic ratio upward with x until it approaches a plateau.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The red squares and red line labeled Co to Li ratio correspond to the Co to Li atomic ratio, and they are read from the right y axis.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The paper states that knowing the overall film composition is essential to evaluate ALD deposited LiCoO2 thin films and to properly interpret the electrochemical results. Changing the Co to Li dosing ratio changes the atomic ratios in the film, so composition must be tracked rather than assumed from the process recipe. This figure provides that link between the ALD dosing ratio and the resulting film composition.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_54_figure_8.jpg","caption":"Figure 8. (Color online) Peak intensity and crystallite size (derived using Scherrer's equation) of the $\\mathrm{Cu(111)}$ peak in the XRD spectra for a $\\mathrm{Cu - }$ TaN-Si (Fig. 6) and b) $\\mathrm{Cu - }$ TiN-Si (Fig. 7) stacks annealed at different temperatures.","id":"train/atomic-layer-deposition/experimental-usecase/54/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/54/figure_8","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":675,"height":953,"image_format":"jpeg","image_sha256":"df39c239ee40c7b8487eb6cfda56611592692e1868ea43a2a7d9d17dbefa8b11","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":4,"width":672,"height":470},{"panel_id":"b","x":1,"y":490,"width":667,"height":445}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the intensity of Cu(111) and crystallite size at different anneal temperatures for a Cu-TaN-Si stack.\"},{\"panel_id\":\"b\",\"text\":\"The chart shows the intensity of Cu(111) and crystallite size at different anneal temperatures for a Cu-TiN-Si stack.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Anneal temperature (°C) | Intensity Cu(111) (counts/s) | Crystallite size (nm) |\\n|---|---|---|\\n| 200 | 100 | 30 |\\n| 400 | 135 | 30 |\\n| 600 | 145 | 30 |\\n| 650 | 100 | 30 |\\n| 700 | 70 | 30 |\"},{\"panel_id\":\"b\",\"text\":\"| Anneal temperature (°C) | Intensity Cu(111) (counts/s) | Crystallite size (nm) |\\n|---|---|---|\\n| 200 | 50 | 30 |\\n| 300 | 70 | 30 |\\n| 400 | 70 | 30 |\\n| 500 | 80 | 30 |\\n| 600 | 90 | 30 |\\n| 700 | 150 | 40 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200, 400, 600, 650 and 700 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 145 counts/s.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Initially, as the temperature increases, so too does the intensity of the Cu(111) peak. This can be related to the growth of the copper crystalline phase and also means that the resistance of the sheet decreases. Above 600 °C, the intensity of the Cu(111) peak rapidly decreases. At this point, copper diffuses through the film into the Si layer and Cu3Si is formed. This also causes a significant increase in film resistance.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200, 300, 400, 500, 600 and 700 °C.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_63_fig_5.jpg","caption":"FIG. 5. (Color online) Optical constants of as-deposited $(250^{\\circ}\\mathrm{C})$ and annealed $\\sim 26 \\mathrm{nm}$ thick $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ thin films.","id":"train/atomic-layer-deposition/experimental-usecase/63/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/63/fig_5","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/Donmez et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"63","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":644,"height":431,"image_format":"jpeg","image_sha256":"67b8d98be77b97e91c7d96b9213eef2de77600cfee6132455bbe743269674892","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":5,"width":642,"height":423}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the refractive index and extinction coefficient of a material as a function of wavelength, comparing 'as-deposited' and 'annealed' conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength, nm | Refractive index n (as-deposited) | Refractive index n (annealed) | Extinction coefficient k (as-deposited) | Extinction coefficient k (annealed) |\\n|---|---|---|---|---|\\n| 300 | 2.08 | 2.09 | 0.025 | 0.000 |\\n| 350 | 1.98 | 2.02 | 0.005 | 0.000 |\\n| 400 | 1.93 | 1.97 | 0.000 | 0.000 |\\n| 450 | 1.91 | 1.95 | 0.000 | 0.000 |\\n| 500 | 1.89 | 1.93 | 0.000 | 0.000 |\\n| 600 | 1.88 | 1.92 | 0.000 | 0.000 |\\n| 700 | 1.87 | 1.92 | 0.000 | 0.000 |\\n| 800 | 1.86 | 1.92 | 0.000 | 0.000 |\\n| 900 | 1.86 | 1.92 | 0.000 | 0.000 |\\n| 1000 | 1.85 | 1.92 | 0.000 | 0.000 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"n is plotted in black using the left y axis.\\n\\nk is plotted in blue using the right y axis.\\n\\nSolid lines indicate as deposited, dashed lines indicate annealed.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The annealed film has a higher refractive index than the as deposited film across the full 300 to 1000 nm range.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the as deposited film, k is highest at the shortest wavelengths near 300 nm and drops quickly toward near zero as wavelength increases. For the annealed film, k stays close to zero across the plotted range. Overall, absorption is concentrated near the short wavelength edge and is smaller after annealing.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After annealing, the refractive index increases relative to the as deposited film, which the authors attribute to structural enhancement after crystallization. A higher n is consistent with a denser and more ordered film compared with an amorphous state. In this dataset, annealing changes n without a large increase in k across most of the visible range, so the film can become optically denser while remaining largely transparent at longer wavelengths.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_69_FIG2_a.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/69/FIG2_a","sample_id":"atomic-layer-deposition/experimental-usecase/69/FIG2_a","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG2_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG2_a.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/Ruben Blomme et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"69","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"not_found"},"width":761,"height":320,"image_format":"jpeg","image_sha256":"6187c65a593c1bae5aed559873e272998f132325207360ddda0c2ff37d7eaf17","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":0,"width":755,"height":318}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the relationship between the atomic ratio of P/(P + O + Al) and GPC (nm/cycle) as a function of TDMAP exposure time (in seconds).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| O - TAl - O | GPC (nm/cycle) | P/(P + O + Al) atomic ratio |\\n|---|---|---|\\n| 0 | 0.12 | 0.00 |\\n| 5 | 0.10 | |\\n| 10 | 0.10 | 0.14 |\\n| 15 | 0.12 | |\\n| 20 | | 0.15 |\\n| 30 | 0.13 | 0.15 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"15 s TDMAP; 10 s first O2 plasma; 15s TMA; 10 s second O2 plasma.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.15.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After about 10 seconds of TMA exposure, the GPC plateaus at a value of 0.12 nm/cycle.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After about 2 seconds of O2 plasma exposure, the GPC plateaus at a value of 12 nm/cycle.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_69_FIG3_a.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/69/FIG3_a","sample_id":"atomic-layer-deposition/experimental-usecase/69/FIG3_a","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG3_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG3_a.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/Ruben Blomme et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"69","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"not_found"},"width":675,"height":447,"image_format":"jpeg","image_sha256":"186beff4cfbde0673e3e4afe2f3d9c27e28e62b801e7672e33fe042a29962f5a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":671,"height":442}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the relationship between average GPC (nanometers per cycle) and the P/(P+O+Al) atomic fraction as a function of temperature (°C).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Average GPC (nm/cycle) | P/(P+O+Al) atomic fraction |\\n|---|---|---|\\n| 125 | 0.20 | 0.17 |\\n| 150 | 0.18 | |\\n| 175 | 0.17 | 0.15 |\\n| 200 | 0.17 | |\\n| 225 | 0.13 | 0.14 |\\n| 250 | 0.13 | 0.15 |\\n| 275 | 0.11 | 0.14 |\\n| 300 | 0.12 | 0.13 |\\n| 325 | 0.10 | 0.15 |\\n| 350 | 0.07 | 0.13 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"25.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It stays relatively constant around a value of 0.15.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 3(a) demonstrates that increasing substrate temperature leads to a decrease in GPC and in the thickness contribution from each individual precursor pulse. The GPC decreases from approximately 0.20 nm per cycle at 125 °C to about 0.08 nm per cycle at 350 °C, whilst XPS analysis indicates that the phosphorus atomic fraction remains essentially independent of temperature. Figure 3(b) further shows that the average thickness addition per pulse for TDMAP, TMA, and the O₂* steps all decline with increasing temperature, consistent with the overall GPC trend. The marginal increase in GPC observed during extended TDMAP exposure at low temperature confirms that precursor condensation is not responsible for the higher growth rate at 125 °C. Overall, the figure indicates that reduced surface reactivity at elevated temperatures, likely due to desorption of reactive surface groups, governs the observed decrease in growth rate.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 0.2 nm.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_12.jpg","caption":"Figure 12. (A) Proton population in film and number of events for 20 cycles. Pulse and purge time have been both fixed at $0.1~\\mathrm{ms}$ and temperature is $500~\\mathrm{K}$ Proton population and number of events increase constantly due to the accumulation of protons in the subsurface layers. (B) (a) Start of metal pulse (cycle), (b) start of purge, (c) start of oxygen pulse, (d) start of purge, and (e) end of cycle. [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_12","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":655,"height":1003,"image_format":"jpeg","image_sha256":"c0b1646d4591e2737a29189047d818cac19847ebeefe20b2cbd9bb29d031cb6a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":653,"height":459},{"panel_id":"b","x":152,"y":472,"width":362,"height":528}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows two time-series: events/μs (red, left axis) and total protons in film/cell (green, right axis). Both signals oscillate in a repeating cycle pattern and generally increase with time, with higher event rates occurring alongside higher proton counts.\"},{\"panel_id\":\"b\",\"text\":\"The chart zooms into one cycle (0.0024–0.0028 s) and marks step transitions (metal pulse, purge, oxygen pulse, purge, end). The events/μs drops to a minimum after the metal pulse and then rises to a peak after the oxygen pulse.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Number of events/μs | Total protons in film/cell |\\n|---|---|---|\\n| 0.0000 | 275 | 27 |\\n| 0.0003 | 984 | 1239 |\\n| 0.0005 | 300 | 183 |\\n| 0.0007 | 1406 | 1842 |\\n| 0.0010 | 471 | 543 |\\n| 0.0011 | 1547 | 1799 |\\n| 0.0014 | 383 | 419 |\\n| 0.0015 | 1714 | 1979 |\\n| 0.0018 | 449 | 481 |\\n| 0.0019 | 1884 | 2122 |\\n| 0.0022 | 471 | 568 |\\n| 0.0023 | 2235 | 2234 |\\n| 0.0025 | 748 | 1047 |\\n| 0.0027 | 2441 | 2414 |\\n| 0.0029 | 772 | 947 |\\n| 0.0031 | 2403 | 2476 |\\n| 0.0033 | 863 | 1090 |\\n| 0.0035 | 2809 | 2954 |\\n| 0.0037 | 1057 | 1464 |\\n| 0.0039 | 2982 | 3111 |\\n| 0.0041 | 1107 | 1451 |\\n| 0.0043 | 3435 | 3681 |\\n| 0.0045 | 1595 | 2146 |\\n| 0.0047 | 3591 | 3644 |\\n| 0.0049 | 1736 | 2084 |\\n| 0.0051 | 3653 | 3483 |\\n| 0.0053 | 1827 | 2146 |\\n| 0.0055 | 3774 | 3799 |\\n| 0.0057 | 1930 | 2488 |\\n| 0.0059 | 3823 | 3893 |\\n| 0.0061 | 1975 | 2264 |\\n| 0.0063 | 4057 | 4315 |\\n| 0.0065 | 2406 | 2905 |\\n| 0.0068 | 4232 | 4533 |\\n| 0.0069 | 2554 | 3190 |\\n| 0.0071 | 4361 | 4496 |\\n| 0.0073 | 2709 | 3296 |\\n| 0.0075 | 4517 | 4719 |\\n| 0.0077 | 2850 | 3209 |\\n| 0.0079 | 4907 | 4968 |\"},{\"panel_id\":\"b\",\"text\":\"| Step | Time (s) | Number of events/μs |\\n|---|---|---|\\n| Start of metal pulse (cycle) | 0.0024 | 2018 |\\n| Start of purge | 0.0025 | 789 |\\n| Start of oxygen pulse | 0.0026 | 768 |\\n| Start of purge | 0.0027 | 2453 |\\n| End of cycle | 0.0028 | 2249 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"20 cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plot indicates net proton accumulation in the film over time. The proton trace shows a repeating up–down pattern each cycle, but its overall level shifts upward across the time window. That upward drift means any proton losses during parts of the cycle are smaller than the gains, so the net balance is positive.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The event rate is high at the start of the metal pulse (~2018 events/μs) and then drops sharply by the start of the first purge to ~789 events/μs. After the oxygen pulse, the event rate jumps to a peak (~2453 events/μs). By the end of the cycle it stays high but drops slightly (~2249 events/μs).\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_28_fig_3.jpg","caption":"Fig. 3. Temperature dependence of the film growth rate. Squares and circles are experimental thickness and mass increments per ALD cycle in $\\mathrm{ZrO_2}$ film growth [10]. Curves are the hydroxylation degree calculated by Eq. (6) for $E_{\\mathrm{ad}} = 25$ kcal/mol (dashed-dotted line), $E_{\\mathrm{ad}} = 35$ kcal/mol (dashed line) and $45\\mathrm{kcal / mol}$ (dashed-dotted line).","id":"train/atomic-layer-deposition/simulation-usecase/28/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/28/fig_3","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/Maxim Deminsky et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":594,"height":444,"image_format":"jpeg","image_sha256":"c66b29bc7913760ea3f96bcf1897e8cba924ca9c106f041617b163490f4c48ca","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":590,"height":442}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between temperature (T., °C) and mass/thickness increment per cycle (a.u.) and hydroxylation degree (a.u.). The mass/thickness increment decreases with increasing temperature, while the hydroxylation degree shows a profile starting at one, gradually decreasing to zero after a threshold.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| T., °C | Mass, thickness increment per cycle, a.u. | Hydroxylation degree, a.u. Left |Hydroxylation degree, a.u. Middle |Hydroxylation degree, a.u. Right |\\n|---|---|---|---|---|\\n| 100 | 1.00 | 1.00 | 1.00 | 1.00 |\\n| 200 | 0.79 | 0.17 | 1.00 | 1.00 |\\n| 300 | 0.67 | 0.00 | 1.00 | 1.00 |\\n| 400 | 0.60 | 0.00 | 0.17 | 1.00 |\\n| 500 | 0.57 | 0.00 | 0.00 | 0.83 |\\n| 600 | 0.54 | 0.00 | 0.00 | 0.17 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reason for this threshold is that there is a certain activation energy that has been set for the calculations. Only after this energy barrier has been met by the temperature, there will be a drop in hydroxynation level.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Less Cl is removed from the surface. Cl is heavier than oxygen so it is likely that the film will be slightly havier if there is, for the same thickness, more Cl.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.61\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As long as the increase in temperature only influences the process and not the sample itself it is likely to saturate the mass increment per cycle.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_7.jpg","caption":"Figure 7.Surface $-\\mathrm{OH}$ concentrations and roughness of the $\\mathrm{Al}_2\\mathrm{O}_3$ film at $300^{\\circ}\\mathrm{C}$ as a function of ALD cycles.","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_7","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":642,"height":517,"image_format":"jpeg","image_sha256":"516353b11abc4b8ac124dae5a4cf2db77dd196e454ef8662035d5ca626d435e6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":634,"height":512}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents the evolution of surface –OH concentration and surface roughness of an Al2O3 film during ALD at 300 °C as a function of cycle number. The –OH concentration increases progressively with ALD cycles, with a pronounced acceleration at later stages. Surface roughness also increases with cycle number, but shows a slower rise and partial saturation compared to the –OH concentration. This indicates that chemical surface activation and morphological roughening evolve at different rates during film growth.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycles | –OH concentration (nm⁻²) | Roughness (Å) |\\n|---|---|---|\\n| 1 | 0.20 | 0.95 |\\n| 2 | 0.25 | 1.00 |\\n| 3 | 0.40 | 1.10 |\\n| 4 | 0.60 | 1.70 |\\n| 5 | 0.90 | 2.15 |\\n| 6 | 1.10 | 2.30 |\\n| 7 | 1.50 | 2.60 |\\n| 8 | 1.90 | 3.00 |\\n| 9 | 2.00 | 2.85 |\\n| 10 | 2.50 | 3.10 |\\n| 11 | 2.80 | 3.10 |\\n| 12 | 3.40 | 3.20 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately a factor of 17 (from ~0.2 to ~3.35 nm⁻²).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure suggests that ALD can achieve high surface reactivity without inducing excessive roughness if growth is stopped before roughness saturation. This allows optimization of cycle count to maximize –OH availability for subsequent reactions while maintaining acceptable surface smoothness. Such insight is valuable for applications requiring both reactive and morphologically controlled oxide films.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_8.jpg","caption":"Figure 8. Growth per cycle in terms of mass (red) and average height (blue) as a function of ALD cycles during the $\\mathrm{Al}_2\\mathrm{O}_3$ ALD at $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_8","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":636,"height":500,"image_format":"jpeg","image_sha256":"939a359145aeba59801a368883a7a26de2e43fc1904579c77608922a0ae96fa7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":632,"height":500}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents the growth per ALD cycle of an Al2O3 film at 300 °C expressed in terms of deposited mass and average height. Both quantities increase overall with ALD cycles, but exhibit noticeable fluctuations. The height-based growth shows stronger oscillations compared to mass-based growth, indicating differences between local thickness variation and overall material uptake during deposition.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycles | Growth per cycle (10⁻⁹ g/cm²)-Mass | Growth per cycle (Å)-Height |\\n|---|---|---|\\n| 1 | 1.2 | 0.07 |\\n| 2 | 1.0 | 0.05 |\\n| 3 | 1.9 | 0.10 |\\n| 4 | 2.0 | 0.12 |\\n| 5 | 2.4 | 0.14 |\\n| 6 | 3.0 | 0.20 |\\n| 7 | 4.0 | 0.18 |\\n| 8 | 5.2 | 0.30 |\\n| 9 | 6.0 | 0.33 |\\n| 10 | 7.0 | 0.38 |\\n| 11 | 6.0 | 0.35 |\\n| 12 | 7.4 | 0.40 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Height-based growth.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- Non-uniform surface coverage\\n- Local roughness evolution\\n- Island growth or restructuring\\n- Differences between average thickness and total material uptake\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Using both metrics provides complementary insight into ALD growth behavior. Mass-based growth reflects the total amount of material deposited per cycle, while height-based growth captures how that material translates into film thickness and roughness. Together, they help distinguish between uniform layer-by-layer growth and morphological effects such as roughening or density changes.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_12.jpg","caption":"Figure 12. Si ALE using $\\mathrm{O}_2$ , $\\mathrm{HF}$ , and $\\mathrm{Al(CH_3)_3}$ as reactants at $290^{\\circ}\\mathrm{C}$ . Si etching occurs with an etch rate of $0.4 \\mathrm{\\AA}$ cycle, while the top $\\mathrm{SiO}_2$ layer remains constant at $\\sim 11 \\mathrm{\\AA}$ . Reproduced with permission from ref 37. Copyright 2018 American Chemical Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_12","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_12","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":664,"height":506,"image_format":"jpeg","image_sha256":"3bda732fe981d5b8db9bd9185e0f53753f42b9d1ffc4323c376abb336e2748f7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":3,"width":657,"height":501}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows a multi-axis chart with the change in silicon thickness and the SiO2 thickness over cycles of Si ALE at 290°C with O₂, 250 Torr, HF, 1 Torr, TMA, 1 Torr, and O₂-HF-TMA.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Si ALE cycles | Si Thickness Change (Å) | SiO2 Thickness (Å) |\\n| --- | --- | --- |\\n| 0 | 0 | 15 |\\n| 20 | -8 | 10 |\\n| 40 | -16 | 10 |\\n| 60 | -24 | 10 |\\n| 80 | -30 | 10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The experiment was perfomed at 290 °C, with O₂, 250 Torr, HF, 1 Torr, TMA, 1 Torr, and O₂-HF-TMA cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thickness of the Si decreases over the Si ALE cycles. The thickness of the SiO2 decreases but reaches a plateau at approximately 20 ALE cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 10 Å, after 20 ALE cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the figure, this ALE process reaches a etch per cycle of 0.4 Å/cycle.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_10.jpg","caption":"Figure 10. Time-resolved QMS results during the fourth TMA exposure in Figure 9. (a) Ion intensities for the $^{68}\\mathrm{Zn(CH_3)_2}$ conversion product at $m / z$ 83 and 98 appear rapidly in advance of the ion intensity for the TMA reactant at $m / z$ 72. (b) Intensity for the $\\mathrm{Al}_2(\\mathrm{CH}_3)_4\\mathrm{F}^+$ ion signal at $m / z$ 133 appears rapidly in advance of the ion intensity for the TMA reactant at $m / z$ 72.","id":"train/atomic-layer-etching/experimental-usecase/23/figure_10","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_10","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":669,"height":986,"image_format":"jpeg","image_sha256":"5da3c6a5da166d94cf956ab8504418e7ccda5b653c5392cda74b6e15525475b8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":22,"y":518,"width":645,"height":465},{"panel_id":"a","x":6,"y":37,"width":658,"height":464}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multi axis chart shows time-resolved QMS ion intensities during the TMA pulse. Volatile zinc byproducts, ⁶⁸Zn(CH₃)⁺ (m/z 83) and ⁶⁸Zn(CH₃)₂⁺ (m/z 98), appear immediately at the start of the pulse and decay rapidly, well before the TMA signal (m/z 72) saturates. This indicates a fast, self-limiting surface reaction that releases dimethylzinc.\"},{\"panel_id\":\"b\",\"text\":\"The multi axis bottom chart shows the aluminum-fluoride dimer fragment Al₂(CH₃)₄F⁺ (m/z 133) relative to the TMA signal (m/z 72). The product signal spikes instantly at the beginning of the TMA exposure, confirming rapid removal of surface fluorine through volatile dimethylaluminum fluoride formation, occurring concurrently with zinc removal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (min) | TMA Intensity (mV) | Product Intensity (mV) | Material |\\n|------------|---------------------|--------------------------|------------------------------|\\n| 38 | 0 | | TMA, m/z 72 |\\n| 38 | | 5.84 | ⁶⁸Zn(CH₃)⁺, m/z 83 |\\n| 38 | | 1.62 | ⁶⁸Zn(CH₃)₂⁺, m/z 98 |\\n| 39 | 52.87 | | TMA, m/z 72 |\\n| 39 | | 0.54 | ⁶⁸Zn(CH₃)⁺, m/z 83 |\\n| 39 | | 0.34 | ⁶⁸Zn(CH₃)₂⁺, m/z 98 |\\n| 39.5 | 54.16 | | TMA, m/z 72 |\\n| 39.5 | | 0.44 | ⁶⁸Zn(CH₃)⁺, m/z 83 |\\n| 39.5 | | 0.33 | ⁶⁸Zn(CH₃)₂⁺, m/z 98 |\\n| 40 | 55.09 | | TMA, m/z 72 |\\n| 40 | | 0.56 | ⁶⁸Zn(CH₃)⁺, m/z 83 |\\n| 40 | | 0.27 | ⁶⁸Zn(CH₃)₂⁺, m/z 98 |\\n| 40.5 | 55.65 | | TMA, m/z 72 |\\n| 40.5 | | 0.69 | ⁶⁸Zn(CH₃)⁺, m/z 83 |\\n| 40.5 | | 0.29 | ⁶⁸Zn(CH₃)₂⁺, m/z 98 |\\n| 41 | 0 | | TMA, m/z 72 |\\n| 41 | | 0.23 | ⁶⁸Zn(CH₃)⁺, m/z 83 |\\n| 41 | | 0.33 | ⁶⁸Zn(CH₃)₂⁺, m/z 98 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (min) | TMA Intensity (mV) | Product Intensity (mV) | Material |\\n|------------|---------------------|--------------------------|------------------------------|\\n| 38.5 | 0 | | TMA, m/z 72 |\\n| 38.5 | | 9.377 | Al₂(CH₃)₄F⁺, m/z 133 |\\n| 39 | 51.04 | | TMA, m/z 72 |\\n| 39 | | 8.77 | Al₂(CH₃)₄F⁺, m/z 133 |\\n| 39.5 | 52.01 | | TMA, m/z 72 |\\n| 39.5 | | 8.64 | Al₂(CH₃)₄F⁺, m/z 133 |\\n| 40 | 54.87 | | TMA, m/z 72 |\\n| 40 | | 9.12 | Al₂(CH₃)₄F⁺, m/z 133 |\\n| 40.5 | 54.3 | | TMA, m/z 72 |\\n| 40.5 | | 9.24 | Al₂(CH₃)₄F⁺, m/z 133 |\\n| 41 | 0 | | TMA, m/z 72 |\\n| 41 | | 0 | Al₂(CH₃)₄F⁺, m/z 133 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This allows you to minimize the TMA exposure time per cycle. Since the reaction completes instantly, the pulse time can be very short, significantly reducing the total cycle time and increasing etch throughput without losing etch per cycle.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Set the mass spectrometer to monitor specific m/z values (72, 83, 98). \\n2. Initiate a short, controlled pulse of TMA into the reactor. \\n3. Record ion intensities versus time. \\nThe timed valve creates a sharp TMA pulse to resolve the rapid surface reaction kinetics from the slower gas-phase filling.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface-limited reaction is better for efficiency, as all TMA is consumed at the surface with no waste. A potential downside is extreme sensitivity to surface defects, which could lead to non-uniform etching if the starting surface is inconsistent.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This indicates TMA is consumed instantly upon reaching the surface, confirming a highly reactive, fluorinated Zn-F surface* from the prior HF step. The surface reaction is faster than the gas-phase residence time, making product detection the first signature of the TMA pulse.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_32_figure_2.jpg","caption":"Figure 2. Relative atomic percentages among In, Ga, and As in InGaAs, and the atomic percentage of Cl on the InGaAs surface measured by XPS as a function of Cl adsorption time from 2.5 to $20\\mathrm{s}$ . The power to the ICP ion source was $200\\mathrm{W}$ at $\\mathrm{Cl}_2$ $1.0\\mathrm{mTorr}$ of process chamber pressure. The grid voltages to the ICP ion gun were maintained at $-10\\mathrm{V}$ for the first grid and $-20\\mathrm{V}$ for the second grid.","id":"train/atomic-layer-etching/experimental-usecase/32/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/32/figure_2","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/Atomic layer etching of InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":655,"height":461,"image_format":"jpeg","image_sha256":"ec2a399861ca1451ecaa64275283926f3dead4015e42a08d73fd14a4b4fd7bf9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":4,"width":653,"height":457}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multi-axis chart showing the atomic percentages of In, Ga, and As (left axis) and Cl (right axis) as a function of Cl adsorption time measured by XPS. The substrate element percentages remain approximately constant across the time range, while the Cl signal increases at short times and saturates at about 16% after ~10 s, as indicated by the annotation in the figure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | In (%) | Ga (%) | As (%) | Cl (%) |\\n|---|---|---|---|---|\\n| Pristine (0) | ~45 | ~36 | ~15 | ~1 |\\n| 2.5 | ~48 | ~38 | ~14 | ~13 |\\n| 5.0 | ~49 | ~36 | ~14 | ~20 |\\n| 10.0 | ~49 | ~38 | ~13 | ~26 |\\n| 20.0 | ~48 | ~38 | ~15 | ~26 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 16%.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, they remain relatively stable across the measured time range.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Chlorine (Cl) atomic percentage increases rapidly during the initial adsorption period and then plateaus at approximately 16%, indicating a saturation behavior. In contrast, the atomic percentages of In, Ga, and As remain relatively constant throughout the adsorption time range. This suggests that Cl adsorption is self-limiting under these conditions and does not significantly perturb the near-surface elemental composition of the InGaAs substrate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.0 mTorr.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_32_figure_5.jpg","caption":"Figure 5. Etch depth (Å) and etch rate $(\\mathrm{\\AA} / \\mathrm{cycle})$ of InGaAs, Si, $\\mathrm{SiO}_2$ , $\\mathrm{HfO}_2$ , PR, and ACL measured as a function of $\\mathrm{Ar^{+}}$ ion desorption time (s/cycle) with the optimized ALE condition in figures 3 and 4.","id":"train/atomic-layer-etching/experimental-usecase/32/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/32/figure_5","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/Atomic layer etching of InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":653,"height":444,"image_format":"jpeg","image_sha256":"965e6fddb0022eb82ebbe0a3b65d0f8de71e8855f0066e243349c4384beacdf8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":1,"width":649,"height":440}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multi-axis chart showing etch depth (left axis) and etch rate (right axis) as a function of Ar⁺ ion exposure time for multiple materials under optimized ALE conditions. InGaAs exhibits a clear increase in etch depth that saturates near ~110 Å, while Si, SiO₂, HfO₂, PR, and ACL show no measurable etching across the entire time range.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s/cycle) | InGaAs Etch Depth (Å) | InGaAs Etch Rate (Å/Cycle) | Etch Depth of Si, SiO₂, HfO₂, PR, ACL (Å) | Etch Rate of Si, SiO₂, HfO₂, PR, ACL (Å/Cycle) |\\n|---|---|---|---|---|\\n| 0 | 0 | 0.0 | 0 | 0 |\\n| 20 | ~45 | ~0.4 | 0 | 0 |\\n| 30 | ~60 | ~0.6 | 0 | 0 |\\n| 50 | ~110 | ~1.1 | 0 | 0 |\\n| 80 | ~115 | ~1.2 | 0 | 0 |\\n| 100 | ~110 | ~1.1 | 0 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. InGaAs\\n, 2. Si\\n, 3. SiO2\\n, 4. HfO2\\n, 5. PR (Photoresist)\\n, 6. ACL (Amorphous Carbon Layer)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure demonstrates extremely high selectivity for InGaAs. While the InGaAs sample (black squares) shows a significant etch depth that increases to saturation around 110 Å, all other tested materials (Si, SiO2, HfO2, PR, and ACL) exhibit zero etch depth. This indicates that the developed ALE process is highly specific to InGaAs and does not damage or remove common mask or substrate materials.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 50 seconds/cycle.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_32_figure_6.jpg","caption":"Figure 6. Etch depth $(\\mathring{\\mathrm{A}})$ and etch rate (A/cycle) of InGaAs measured as a function of the number of ALE cycles.","id":"train/atomic-layer-etching/experimental-usecase/32/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/32/figure_6","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/Atomic layer etching of InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":669,"height":450,"image_format":"jpeg","image_sha256":"b0d1b89df148cef029667379e1942de01f583ff63652cfb3e76e082cc00f5c6c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":3,"width":665,"height":446}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multi-axis chart showing InGaAs etch depth (left axis, black squares) and etch rate per cycle (right axis, red circles) as a function of the number of ALE cycles. Etch depth increases approximately linearly from 100 to 400 cycles, while the etch rate remains nearly constant at ~1.1 Å/cycle across the range.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| No. of ALE Cycles | Etch Depth (Å) [Left Axis] | Etch Rate (Å/Cycle) [Right Axis] |\\n|---|---|---|\\n| 100 | ~105 | ~1.10 |\\n| 200 | ~220 | ~1.10 |\\n| 300 | ~335 | ~1.13 |\\n| 400 | ~460 | ~1.15 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 1.1 Å/Cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch depth exhibits a perfectly linear increase as the number of cycles increases from 100 to 400. The black squares fall along a straight line, rising from approximately 100 Å to roughly 460 Å. This linearity, combined with the constant etch rate, indicates that the etching process is highly stable and allows for precise control of the etch depth at the angstrom level.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No. of ALE Cycles.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_32_figure_7.jpg","caption":"Figure 7. Surface roughness and surface composition after the 100 cycles of ALE, investigated using AFM and XPS, respectively. As references, the surface roughness and surface composition of as-received un-etched InGaAs and the InGaAs etched by conventional RIE were included. For the InGaAs RIE, InGaAs was etched for 1 min using an ICP etcher operated at $13.56\\mathrm{MHz}200\\mathrm{W}$ $-50\\mathrm{V}$ of bias voltage, and $\\mathrm{Cl}_2$ gas pressure of $50\\mathrm{mTorr}$","id":"train/atomic-layer-etching/experimental-usecase/32/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/32/figure_7","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/Atomic layer etching of InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":672,"height":425,"image_format":"jpeg","image_sha256":"f312a63bb472ffd0042d7ac3987ec0d9b1cfcf8dcb2f93200ab1f33fb9814758","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":670,"height":420}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multi-axis chart comparing surface composition (atomic %) and RMS roughness for Reference (Ref.), ALE, and RIE treated InGaAs. The RIE sample shows a measurable chlorine signal (7.8%) and the highest roughness on the right axis, while both Ref. and ALE show no detectable chlorine and lower roughness levels. The composition of In, Ga, and As remains broadly comparable between Ref. and ALE, indicating limited surface modification under ALE conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Metric | Ref. | ALE | RIE |\\n|---------------|------|------|-------|\\n| In (Atomic %) | 29.4 | 29.5 | 38.0 |\\n| Ga (Atomic %) | 20.6 | 21.8 | 18.4 |\\n| As (Atomic %) | 6.6 | 5.3 | 2.4 |\\n| Cl (Atomic %) | ~0 | ~0 | 7.8 |\\n| C (Atomic %) | 43.4 | 43.4 | ~33.4 |\\n| Rq (nm) | ~60 | ~68 | ~78 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Chlorine (Cl).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the roughness values are very similar (4.6 nm for ALE vs. 4.3 nm for Reference).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE sample exhibits lower roughness and no detectable chlorine signal compared with the RIE sample. In contrast, the RIE condition shows a clear chlorine residue (7.8%) and the highest roughness level on the right axis. This indicates that ALE produces a smoother and chemically cleaner surface than RIE under the conditions shown.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Reactive Ion Etching (RIE).\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_33_fig_5.jpg","caption":"FIG. 5. IR annealing time dependence of the EPC of TiN films with error bars representing the standard deviation $\\sigma$ . Temperature (solid line), shown on the right axis, was measured using a thermocouple attached to the carrier wafer during processing.","id":"train/atomic-layer-etching/experimental-usecase/33/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/33/fig_5","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/Atomic layer etching of titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":677,"height":537,"image_format":"jpeg","image_sha256":"ef9029fce514a240f5534d7277a9324f226bf79b21a6ca01d69047cf14c48281","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":671,"height":530}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between IR annealing time and EPC (nanometers per cycle) along with the corresponding temperature in degrees Celsius.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| IR Annealing Time (s) | EPC (nm/cycle) | Temperature (degrees celcius)|\\n|---|---|---|\\n| 0 | 0 |-10|\\n| 1 | 0.1 |-10|\\n| 2 | 0.2 |-10|\\n| 3 | 0.3 |-10|\\n| 4 | 0.3 |0|\\n| 5 | 0.5 |0|\\n| 6 | 0.4 |10|\\n| 7 | 1.1 |15|\\n| 8 | 1.3 |20|\\n| 9 | 1.2 |25|\\n| 10 | 1.0 |30|\\n| 15 | 2.6 |60|\\n| 20 | 2.8 |100|\\n| 25 | 2.6 |140|\\n| 30 | 2.7 |170|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The EPC seems to show self-limiting behaviour, however there is also increase in table temperature. This means that the actual influence can not be seen easily.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both the annealing duration and the temperature at which the experiment takes place have been changed. Usually in experiment designs the goal is to change only one parameter at a time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2.7 nm/cycle\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For industrial applications the shortest exposures with still good controllablity should be chosen, this would be 15 s.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_34_fig_8.jpg","caption":"FIG. 8. Roughness and thickness change of $60 \\text{nm} \\text{Al}_2\\text{O}_3$ after 5 min of $50 \\text{W}$ dry etching at 0.06 Torr, 50-cycle pALE at $400^{\\circ}\\text{C}$ , and 100-cycle pALE at $400^{\\circ}\\text{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/34/fig_8","sample_id":"atomic-layer-etching/experimental-usecase/34/fig_8","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/CF4 plasma-based atomic layer etching of Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":866,"height":617,"image_format":"jpeg","image_sha256":"2411de5bd8ec2bd8266e094994406e77899a006bc968c239022b913704ffc8d7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":866,"height":617}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares thickness and RMS roughness of Al₂O₃ across four processing steps—initial deposition, dry etching, and two pALE cycle conditions. Thickness continuously decreases from ~60 nm to ~10 nm, while roughness first increases after dry etching and then decreases again with pALE, as confirmed by both plotted values and AFM images.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Process Condition|Thickness (nm)|RMS Roughness (nm)|\\n|------------------|--------------|------------------|\\n|as-deposited|55–60|0.8–1.0|\\n|50 W – 5 min|~40|1.3–1.4|\\n|50 cycles pALE|~25|~1.0|\\n|100 cycles pALE|~10–12|0.7–0.8|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The results show that while dry etching quickly reduces thickness, it also damages the surface by increasing roughness. In contrast, pALE offers both thinning and smoothing, restoring the surface to near-original roughness levels. This indicates that pALE is better suited for applications requiring precise surface control, smoother interfaces, and minimal plasma damage. The combined data allow researchers to balance thinning rate with surface quality for optimal device fabrication.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Dry etching leaves the film around ~40 nm thick with high roughness (~1.3–1.4 nm), while 50 and 100 pALE cycles further thin the film to ~25 nm and ~10–12 nm and reduce roughness to ~1.0 and ~0.7–0.8 nm.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Self-limiting etch reactions improve smoothness, Surface becomes more uniform with controlled etching, Damage from aggressive dry etching is gradually repaired, Lower RMS roughness reflects higher surface quality\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_5.jpg","caption":"Figure 5. Peak intensity of high resolution XPS scans of (a) Ti 2p $(459.1~\\mathrm{eV})$ and Si 2p $(99.3\\mathrm{eV})$ and (b) W 4f and $(38\\mathrm{eV})$ and F 1s $(685.2\\mathrm{eV})$ for $5.5\\mathrm{nm}$ $\\mathrm{TiO_2}$ films exposed to 0, 10, 25, 50, and $100\\mathrm{WF}_6$ doses at $220^{\\circ}\\mathrm{C}$ . Lines are a guide for the eye. The decrease in the Ti 2p signal confirms film etching.","id":"train/atomic-layer-etching/experimental-usecase/46/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_5","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":1047,"height":372,"image_format":"jpeg","image_sha256":"8a44c5d879912d6d9fcf87fdb299abf719c01d55dd3e59c6ddff36640d8bb7af","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":516,"height":371},{"panel_id":"b","x":526,"y":0,"width":520,"height":371}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS Ti 2p and Si 2p spectra show a linear decrease in the Ti signal and a corresponding increase in the Si substrate signal with increasing WF₆ exposure, confirming progressive thinning and etching of the 5.5 nm TiO₂ film at 220 °C.\"},{\"panel_id\":\"b\",\"text\":\"XPS W 4f and F 1s spectra increase rapidly and then saturate with WF₆ dosing, indicating the formation of a stable tungsten–fluoride–rich surface layer and associated chemical modification during the process.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| WF₆ Doses | Intensity (a.u.) | Material |\\n|----------|------------------|----------|\\n| 0 | 28600 | Ti 2p Intensity |\\n| 0 | 1600 | Si 2p Intensity |\\n| 10 | 26200 | Ti 2p Intensity |\\n| 10 | 1667 | Si 2p Intensity |\\n| 25 | 25300 | Ti 2p Intensity |\\n| 25 | 1800 | Si 2p Intensity |\\n| 50 | 22500 | Ti 2p Intensity |\\n| 50 | 2490 | Si 2p Intensity |\\n| 75 | 21100 | Ti 2p Intensity |\\n| 75 | 3000 | Si 2p Intensity |\\n| 100 | 19300 | Ti 2p Intensity |\\n| 100 | 3645 | Si 2p Intensity |\"},{\"panel_id\":\"b\",\"text\":\"| WF₆ Doses | Intensity (a.u.) | Material |\\n|----------|------------------|----------|\\n| 0 | 2000 | W 4f Intensity |\\n| 0 | 5500 | F 1s Intensity |\\n| 10 | 4300 | W 4f Intensity |\\n| 10 | 6550 | F 1s Intensity |\\n| 25 | 4300 | W 4f Intensity |\\n| 25 | 6600 | F 1s Intensity |\\n| 50 | 4500 | W 4f Intensity |\\n| 50 | 7000 | F 1s Intensity |\\n| 75 | 4334 | W 4f Intensity |\\n| 75 | 7100 | F 1s Intensity |\\n| 100 | 4000 | W 4f Intensity |\\n| 100 | 7200 | F 1s Intensity |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 100 doses, the sample is in a near-breakthrough state. The Si 2p signal (substrate) has more than doubled in intensity compared to 0 doses, indicating the TiO₂ overburden is significantly thinner, allowing photoelectrons from the underlying silicon wafer to escape and be detected.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The WF₆ chemical method is preferable for leaving a passivated surface, as it forms a stable W-F termination. The trade-off is that it leaves a foreign material residue (W) on the surface. Physical sputtering would avoid residue but would create a damaged, reactive surface with dangling bonds requiring subsequent passivation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The composition changes from pure TiO₂ to a mixed tungsten oxyfluoride layer. The inverse trends represent a fluorination and exchange reaction: WF₆ fluorinates the TiO₂ network, forming volatile TiFₓ species that etch away (decreasing Ti), while non-volatile tungsten fluoride (WFₓ) products remain on the surface (increasing W and F).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The consistent, dose-dependent changes show the reaction is predictable and controllable. By calibrating the number of WF₆ doses to the decrease in Ti signal (thickness), engineers can reliably etch TiO₂ to a target thickness with minimal variation, which is essential for device performance.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_13_fig_3.jpg","caption":"FIG. 3. A typical plot of Ar kinetic energy (filled circles) and Ar projected position along the vertical axis (empty circles) as a function of time. The dashed horizontal line indicates the position at which an atom moving away from the lattice is removed from the simulation cell.","id":"train/atomic-layer-etching/simulation-usecase/13/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/13/fig_3","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/Molecular dynamics simulation of atomic layer etching of silicon.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":670,"height":439,"image_format":"jpeg","image_sha256":"a6e2e46004b022a71166766e8e224c8dcd37231bd11842d09981ffbae09276e1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":5,"width":668,"height":432}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the kinetic energy of Ar atoms (in eV) and their y-position (in Angstroms) over time (in ps). The kinetic energy decreases rapidly at the beginning and then plateaus. The y-position also decreases rapidly initially, but then increases linearly after 0.2 ps.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (ps) | Ar Kinetic Energy (eV) | y-position (Angstrom) |\\n|---|---|---|\\n| 0.0 | 50.0 | 5.0 |\\n| 0.1 | 50.0 | -3.0 |\\n| 0.2 | 0.2 | -3.0 |\\n| 0.3 | 1.0 | -2.0 |\\n| 0.4 | 2.0 | 0.0 |\\n| 0.5 | 2.0 | 1.25 |\\n| 0.6 | 2.0 | 5.0 |\\n| 0.7 | 2.0 | 8.75 |\\n| 0.8 | 2.0 | 12.5 |\\n| 0.9 | 2.0 | 16.25 |\\n| 1.0 | 2.0 | 20.0 |\\n| 1.1 | 2.0 | |\\n| 1.2 | 2.0 | |\\n| 1.3 | 2.0 | |\\n| 1.4 | 2.0 | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.0 to 1.4 ps.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"20.0 Å.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 2.0 eV.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 3 shows how a 50 eV Ar⁺ ion interacts with the surface over the first few tenths of a picosecond, highlighting both the ion’s kinetic energy and its y-coordinate as functions of time. When the ion is introduced at \\nt = t50​ at y = 8.5 Å, it rapidly penetrates the lattice and collides with atoms in the top layers. These collisions cause a fast drop in kinetic energy. As its energy continues to decrease, the Ar ion reaches its maximum penetration depth at y = -2 Å around 0.17 ps with a minimum kinetic energy below 0.2 eV. Subsequent collisions eventually impart energy back to the ion, reversing its motion and causing it to travel upward through the lattice. The figure shows the ion exiting the material at around 0.4 ps with a kinetic energy of roughly 2 eV. Once the ion crosses the y = 4.5 Å threshold, its kinetic energy becomes constant, indicating that it has left the “influence region” of the lattice and is no longer interacting with surface atoms.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_13_fig_4.jpg","caption":"FIG. 4. The hot-spot temperature (triangles) and the number of atoms in the hot spot (circles) as a function of time. The figure shows an average over 300 simulation runs.","id":"train/atomic-layer-etching/simulation-usecase/13/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/13/fig_4","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/Molecular dynamics simulation of atomic layer etching of silicon.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":669,"height":427,"image_format":"jpeg","image_sha256":"5371dee74b91cea750c6e6aa30be93e73d12a5103f1fad0e03600a41a89a78e2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":6,"width":664,"height":421}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the average hot spot temperature and the average number of atoms in the hot spot over time.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (ps) | Average hot spot temperature (K) | Average number of atoms in the hot spot |\\n|---|---|---|\\n| 0.0 | 300 | 0 |\\n| 0.2 | 1000 | 70 |\\n| 0.4 | 800 | 80 |\\n| 0.6 | 700 | 60 |\\n| 0.8 | 600 | 50 |\\n| 1.0 | 500 | 40 |\\n| 1.2 | 400 | 25 |\\n| 1.4 | 400 | 20 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 400 K.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 30.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 4 shows how a localized hot spot develops immediately after the energetic Ar ion collides with the surface and transfers energy into the lattice. The average crystal temperature rises sharply and reaches a maximum of about 1070 K around the moment when most of the ion’s kinetic energy has been dissipated, roughly 0.15 ps after impact. When focusing only on the atoms directly affected by the collision, the hot spot reaches an even higher peak temperature of more than 3000 K at around 0.10 ps. At this very early stage, only a small group of atoms carry most of the deposited energy. As these atoms transfer energy into their surroundings, the hot spot spreads, which increases the number of atoms involved but lowers the average temperature of this region. This spreading continues until about 0.35 ps, when the hot spot reaches its maximum size of about 75 atoms. Thereafter both the local temperature and the number of affected atoms decrease as energy continues to dissipate through the lattice and into the surrounding temperature-controlled region. The authors emphasize that the hot-spot temperature is only a qualitative measure because temperature is not rigorously defined when only a small number of atoms are involved.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_17_fig1.jpg","caption":"Fig.1. t time of G0 and G3 for both steps, respectively. (For interpretation of the references to color in this figure legend, the reader is referred to the web version of this article.)","id":"train/atomic-layer-etching/simulation-usecase/17/fig1","sample_id":"atomic-layer-etching/simulation-usecase/17/fig1","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/Multiscale computational fluid dynamics modeling of thermal atomic layer etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":1286,"height":445,"image_format":"jpeg","image_sha256":"9508d408c4b0a5b92669c875e17333bb5e949c066b703791ffca664c98a95b41","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":9,"width":613,"height":433},{"panel_id":"b","x":644,"y":11,"width":632,"height":431}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the consumption of HF at different feed flow rates, along with the half-cycle time for G0 and G3 processes for Step A.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the consumption of TMA at different feed flow rates, along with the half-cycle time for G0 and G3 processes for Step B.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF Feed Flow Rate (sccm) | G0: HF Consumed (×10⁵ std cm³/year) | G3: HF Consumed (×10⁵ std cm³/year) | G0: Half-Cycle Time (s) | G3: Half-Cycle Time (s) |\\n|---------------------------|--------------------------------------|--------------------------------------|---------------------------|---------------------------|\\n| 50 | 0.5 | 0.5 | 1.6 | 1.6 |\\n| 150 | 1.2 | 1.2 | 1.4 | 1.4 |\\n| 300 | 2.5 | 2.5 | 1.4 | 1.4 |\\n| 600 | 4.8 | 4.2 | 1.3 | 1.2 |\\n| 600 | 5.8 | 5.3 | 1.1 | 1.0 |\"},{\"panel_id\":\"b\",\"text\":\"| TMA Feed Flow Rate (sccm) | G0: TMA Consumed (×10⁵ std cm³/year) | G3: TMA Consumed (×10⁵ std cm³/year) | G0: Half-Cycle Time (s) | G3: Half-Cycle Time (s) |\\n|----------------------------|---------------------------------------|---------------------------------------|---------------------------|---------------------------|\\n| 70 | 1.0 | 1.0 | 2.5 | 2.5 | \\n| 150 | 2.2 | 2.2 | 2.5 | 2.5 |\\n| 300 | 4.2 | 4.2 | 2.4 | 2.4 |\\n| 600 | 7.8 | 7.0 | 2.1 | 1.8 |\\n| 900 | 10 |9.8 | 1.8 | 1.8 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For both reactors, the HF cycle time and TMA cycle time remain constant until 500 sccm and change respectively when\\n1. HF flow rate is 600 and 900 sccm\\n2. TMA flow rate is 600 and 900 sccm.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The annual feed consumption is calculated by assuming that 96 cycles of etching are conducted daily and that the half-cycle times for each feed flow rate remain constant with each cycle in a single wafer system. The estimates for the precursor consumption are calculated for a single wafer.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The results for Step A a indicate that the half-cycle time for Step A for G3 is consistently faster compared to that of G0. Thus, the amount of precursor needed to ensure complete coverage is less than that of G0. By utilizing G3, at least 1.3 ×10 3 std cm 3 and at most 5.5 ×10 4 std cm 3 of HF can be saved for the range of the simulated flow rates with 600 sccm flow rate achieving the greatest amount of precursor that could be saved\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_17_fig_10.jpg","caption":"Fig. 10. Complete cycle of G3 displaying the pressure of HF and TMA and coverage of $\\mathrm{AlF_3}$ for all HF and TMA feed flow rate of $150~\\mathrm{scm / h}$ and $70~\\mathrm{scm / h}$ , respectively. The blue solid line and the orange dashed line indicate the pressure of HF and TMA over time, respectively. The yellow solid line shows the coverage of $\\mathrm{AlF_3}$ . The $\\mathrm{AlF_3}$ is formed in Step A and etched in Step B. (For interpretation of the references to color in this figure legend, the reader is referred to the web version of this article.)","id":"train/atomic-layer-etching/simulation-usecase/17/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/17/fig_10","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/Multiscale computational fluid dynamics modeling of thermal atomic layer etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":670,"height":333,"image_format":"jpeg","image_sha256":"2d501670d73fb8ab08d958236c895294c75fabf8289dfff2eb8c3c35a30e5d77","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":5,"width":664,"height":326}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the pressure and coverage of AIF3 over time, with two separate axes for each metric for reactor model G3.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | HF Pressure (Pa) | TMA Pressure (Pa) | Coverage of AlF₃ (%) |\\n|----------|-------------------|--------------------|------------------------|\\n| 0 | 0 | 0 | 0 |\\n| 0.5 | 30 | 0 | 40 |\\n| 1.0 | 65 | 0 | 80 |\\n| 1.5 | 68 | 0 | 95 |\\n| 2.0 | 65 | 0 | 100 |\\n| 3.0 | 0 | 0 | 100 |\\n| 6.0 | 0 | 0 | 100 |\\n| 7.0 | 0 | 30 | 100 |\\n| 8.0 | 0 | 60 | 100 |\\n| 9.0 | 0 | 65 | 100 |\\n| 10.0 | 0 | 60 | 100 |\\n| 11.0 | 0 | 0 | 100 |\\n| 15.0 | 0 | 0 | 100 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The HF and TMA feed flow rate of 150 sccm and 70 sccm, respectively.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The inclined plate reactor (G3) shows the best performance in terms of the film uniformity and etching speed.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It means a complete etching cycle consisting of \\n1. HF dose of 2 s\\n2. N 2 purge of 5 s\\n3. A TMA dose of 3 s\\n4. N 2 purge of 5 s\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"HF Pressure starts increasing at 0 s, peaks around 65–70 Pa between 1–2 s, then drops sharply to near zero by 3 s, indicating that the HF pulse occurs early in the cycle (roughly 0–2.5 s). TMA Pressure (Red dashed line), remains at zero until about 7 s, then rises sharply to about 60–65 Pa between 8–10 s, and falls back to zero by 11 s. This shows the TMA pulse happens later in the cycle (roughly 7–10.5 s). Coverage of AlF₃ (Yellow dotted line): Starts at 0%, rises rapidly during the HF pulse, reaching 100% coverage by ~2 s, and stays constant for the rest of the cycle. This means the surface becomes fully covered with AlF₃ after the HF exposure and does not change during the TMA pulse. Thus the process is sequential as it represents complete cycle with TMA following HF.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_26_fig_4.jpg","caption":"FIG. 4. Changes in the etched depth (black) and surface concentration of Cl atoms (blue) as functions of the $\\mathsf{Ar}^+$ ion dose in the desorption step. Here, the etched depth is defined as the position of the top surface measured from its position at the end of the previous desorption step. The ALE conditions for (a)–(d) are the same as those for (a)–(d) of Fig. 3, respectively. The results shown here are the averages of those over C3–C6 cycles.","id":"train/atomic-layer-etching/simulation-usecase/26/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/26/fig_4","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"multi-axis chart"},{"panel_id":"d","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/Surface damage formation during atomic layer etching of silicon with chlorine adsorption.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":1350,"height":1095,"image_format":"jpeg","image_sha256":"5b5d209be74bf51302baabf3c02eec128c59ee453025b5fa27f0f872a8bd57f3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":49,"width":652,"height":508},{"panel_id":"b","x":687,"y":53,"width":654,"height":503},{"panel_id":"c","x":9,"y":583,"width":654,"height":512},{"panel_id":"d","x":687,"y":583,"width":655,"height":512}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the depth change and concentration of Cl atoms on Si as a function of ion dose for 20 eV Ar+ ions for thin Cl layer adsorption.\"},{\"panel_id\":\"b\",\"text\":\"The chart shows the depth change and concentration of Cl atoms on Si as a function of ion dose for 50 eV Ar+ ions for thin Cl layer adsorption.\"},{\"panel_id\":\"c\",\"text\":\"The chart shows the depth change and concentration of Cl atoms on Si as a function of ion dose for 20 eV Ar+ ions for thick Cl layer adsorption.\"},{\"panel_id\":\"d\",\"text\":\"The chart shows the depth change and concentration of Cl atoms on Si as a function of ion dose for 50 eV Ar+ ions for thick Cl layer adsorption.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion Dose (x1016 ions/cm2) | Depth Change (Å) | Cl Atoms on Si (1015/cm2) |\\n|---|---|---|\\n| 0.0 | 0.0 | 1.5 |\\n| 5.0 | 0.5 | 1.0 |\\n| 10.0 | 1.0 | 0.8 |\\n| 15.0 | 1.5 | 0.75 |\"},{\"panel_id\":\"b\",\"text\":\"| Ion Dose (x1016 ions/cm2) | Depth Change (Å) | Cl Atoms on Si (1015/cm2) |\\n|---|---|---|\\n| 0.0 | 0.0 | 6.2 |\\n| 5.0 | 2.2 | 2.2 |\\n| 10.0 | 4.4 | 1.2 |\\n| 15.0 | 6.6 | 0.4 |\"},{\"panel_id\":\"c\",\"text\":\"| Ion Dose (x1016 ions/cm2) | Depth Change (Å) | Cl Atoms on Si (1015/cm2) |\\n|---|---|---|\\n| 0.0 | 0.0 | 4.2 |\\n| 5.0 | 1.5 | 1.2 |\\n| 10.0 | 3.0 | 1 |\\n| 15.0 | 4.5 | 0.4 |\"},{\"panel_id\":\"d\",\"text\":\"| Ion Dose (x1016 ions/cm2) | Depth Change (Å) | Cl Atoms on Si (1015/cm2) |\\n|---|---|---|\\n| 0.0 | 0.0 | 12.5 |\\n| 5.0 | 2.5 | 1 |\\n| 10.0 | 5.0 | 0.6 |\\n| 15.0 | 7.5 | 0.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Here, the etched depth is defined as the position of the top surface measured from its position at the end of the previous desorption step.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At low Ar+ ion incident energy, it is seen that, with the increasing Ar+ ion dose, the etched depth in (a) increased slowly with a weakly decreasing slope, whereas the etched depth in (c) increased rapidly with a clear sign of saturation, i.e., the self-limit. The surface concentrations of Cl atoms also\\ndecreased slowly and nearly one-half of the initial Cl atoms remained on the surface at the end of the ALE cycle in (a), whereas the surface concentrations of Cl atoms in (c) decreased sharply with the Ar+ ion dose. It should be noted, however, that, even in the case of (c), a small amount of Cl, with a surface concentration similar to that in (a), still remained on the Si surface at the end of\\nthe ALE cycle.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At high Ar+ ion incident energy, it is seen in (b) that, with a small amount of Cl deposited in the adsorption step, the etched depth monotonically increased all throughout the Ar+ ion injection,\\nindicating that physical sputtering dominates the etching process. In (d), where a larger amount of Cl was deposited in the adsorption step, the etched depth increased drastically until about\\n5 * 10^16/cm2 and then increased monotonically in the same way as in (b). In both cases, the density of Cl atoms at the end of the ALE cycle is almost negligible.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_27_fig_11.jpg","caption":"FIG. 11. Al2p XPS peak area and peak binding energy after 30 ALE cycles as a function of table temperature. The binding energies of $\\mathrm{AlF}_3$ and $\\mathrm{Al}_2\\mathrm{O}_3$ have been included as dashed lines to show the transition between the two binding environments. The insets show the fitted Al2p XPS spectra for the films etched at 100 and $200^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/simulation-usecase/27/fig_11","sample_id":"atomic-layer-etching/simulation-usecase/27/fig_11","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"spectra chart"},{"panel_id":"c","label":"spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":675,"height":523,"image_format":"jpeg","image_sha256":"63218294d8562bd5b4928ee54197b794d5e5ad6a6b60642f93d478db8a50da59","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":670,"height":519},{"panel_id":"b","x":245,"y":121,"width":165,"height":161},{"panel_id":"c","x":407,"y":120,"width":166,"height":164}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS analysis showing Al2p peak area (black) and binding energy (blue) as a function of process temperature after 30 ALE cycles. The Al2p signal is high at low temperatures (~100°C) with binding energy near AlF3 (76.5 eV), indicating AlF3 deposition dominates. Above 200°C, the peak area decreases and stabilizes while binding energy shifts toward Al2O3 (74.5 eV), indicating successful ALE with minimal Al contamination.\"},{\"panel_id\":\"b\",\"text\":\"Fitted Al2p XPS spectrum at 100°C showing a large peak consistent with AlF3 formation.\"},{\"panel_id\":\"c\",\"text\":\"Fitted Al2p XPS spectrum at 200°C showing a smaller peak shifted toward Al2O3 binding energy.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Al2p Peak Area (x10³ CPS eV) | Peak Binding Energy (eV) |\\n|---|---|---|\\n| 100 | 17.8 | 76.25 |\\n| 125 | 16.2 | 76.45 |\\n| 150 | 14.5 | 76.35 |\\n| 175 | 5.2 | 75.80 |\\n| 200 | 1.2 | 74.85 |\\n| 225 | 0.9 | 74.50 |\\n| 250 | 0.8 | 74.85 |\\n| 275 | 0.9 | 74.65 |\\n| 300 | 1.0 | 74.75 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Intensity 100°C (x10³ CPS) | Intensity 200°C (x10³ CPS) |\\n|---|---|---|\\n| 80.0 | 0.1 | 0.0 |\\n| 78.0 | 1.5 | 0.0 |\\n| 77.0 | 5.5 | 0.1 |\\n| 76.2 | 7.3 | 0.2 |\\n| 75.5 | 5.0 | 0.4 |\\n| 74.8 | 1.2 | 0.8 |\\n| 74.0 | 0.2 | 0.3 |\\n| 72.0 | 0.0 | 0.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At low temperatures (100°C), significant Al contamination occurs due to dominant AlF3 ALD reactions, resulting in a large Al2p peak area. Between 125 and 175°C, the Al content decreases as the AlF3 ALD reaction is suppressed while the ALE ligand-exchange reaction becomes more effective. Above 200°C, the Al2p signal stabilizes at a minimal level (<1 at.%), indicating that Al atoms deposited during the TMA step are efficiently removed.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At low temperatures, AlF3 deposition from the SF6 plasma/TMA chemistry dominates, resulting in Al-F bonding. At higher temperatures, the AlF3 ALD reaction is suppressed and any residual Al on the surface comes from unreacted TMA in the final half-cycle. When samples are transferred through ambient air to the XPS, this residual TMA oxidizes, producing Al2O3-like binding environments rather than AlF3.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200°C.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"76.5 eV corresponds to Al-F bonds (AlF3), while 74.5 eV corresponds to Al-O bonds (Al2O3).\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_2.jpg","caption":"FIG. 2. (Color online) Etch front characteristics during ideal ALE etching. (a) Etch depth and surface roughness as a function of time for the second through fifth ALE pulses. The different subcycles $\\mathrm{Cl} =$ passivation, $\\mathrm{Ar}^+$ $=$ ion bombardment) are shown at the top for reference, with passivation phases being highlighted by gray bands in the figure. Four pulse periods are shown in total. (b) Surface coverage of Si, $\\mathrm{SiCl}$ $\\mathrm{SiCl}_2$ $\\mathrm{SiCl}_3$ and average chlorine per site at the etch front as a function of time for the second pulse.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_2","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":572,"height":928,"image_format":"jpeg","image_sha256":"2edddb76f1104fe8853353a63d29261d61d1b3f7ee86eb918cafb4d2536d76a7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":11,"y":8,"width":561,"height":448},{"panel_id":"b","x":0,"y":501,"width":572,"height":427}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the etch depth and roughness over time during a process involving alternating cycles of Ar+ and Cl treatments.\"},{\"panel_id\":\"b\",\"text\":\"The chart illustrates the surface coverage of Si, SiCl, SiCl2, and SiCl3 along with the average chlorine site over time during a process involving Cl and Ar+ treatments.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Etch Depth (ML) | Roughness |\\n|----------|-----------------|-----------|\\n| 3.0 | 0 | 0.00 |\\n| 6.5 | -1.5 | 1.00 |\\n| 10.0 | -3.0 | 1.00 |\\n| 13.5 | -4.5 | 1.00 |\\n| 17.0 | -5.0 | 0.00 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Si Coverage | | SiCl3 | SiCl2 | SiCl |\\n|----------|-------------|------|-------|-------|------|\\n| 3.0 | 1.00 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 3.3 | 0.00 | 2.80 | 0.80 | 0.50 | 0.20 |\\n| 4.8 | 0.90 | 0.50 | 0.10 | 0.05 | 0.00 |\\n| 6.8 | 1.00 | 2.90 | 0.90 | 0.60 | 0.30 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface coverages of SiClx plotted as a function of time for one ALE cycle indicate that there is a short (50 ms) transient period at the beginning\\nof the Cl passivation step where SiClx x<3 species dominate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After the initial transient the surface quickly establishes a steady state coverage of \\n1. 1% SiCl\\n2. 21% SiCl2\\n3. 78% SiCl3\\nmaking an average chlorination per surface site, , of 2.77.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch depth as a function of time for the AR2 feature shows exactly one ML of material being removed in each ALE cycle from the second cycle after starting the etch, to the fifth cycle. The roughness increases at the beginning of each ion bombardment step as the passivated layer is partially and statistically eroded.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes after etching\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_3.jpg","caption":"FIG. 3. (Color online) Surface coverage of Si and average chlorine per site at the etch front for ideal ALE as a function of time for the second ALE pulse for $\\mathrm{AR} = 2$ and 10 trenches.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_3","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":578,"height":439,"image_format":"jpeg","image_sha256":"8ec8c1817093ee2f9a398eaa9ed66a79719c911811d92da25c5cd6247b9d9b75","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":5,"width":572,"height":432}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the Si surface coverage and average chlorine per site over time, with two curves labeled 'Ar = 2' and 'Ar = 10' as a function of time.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Si Coverage (Ar=2) | Si Coverage (Ar=10) | Cl Coverage (Ar=2) | Cl Coverage (Ar=10) |\\n|----------|---------------------|----------------------|---------------------|----------------------|\\n| 2.8 | 1.00 | 1.00 | 0.00 | 0.00 |\\n| 3.0 | 0.00 | 0.00 | 2.80 | 2.50 |\\n| 3.2 | 0.00 | 0.00 | 2.90 | 2.70 |\\n| 3.4 | 0.10 | 0.05 | 2.80 | 2.60 |\\n| 3.6 | 0.50 | 0.40 | 2.00 | 1.80 |\\n| 3.8 | 0.90 | 0.80 | 1.00 | 0.80 |\\n| 4.0 | 1.00 | 0.95 | 0.20 | 0.10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The only significant difference between the ideal ALE of features having AR 2 and AR 10 is the time required to achieve the steady state value of \"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A longer time is required to fully passivate the AR 10 feature compared to AR 2. As the AR increases, the neutral conductance through the feature decreases, and a larger portion of the incoming neutral flux is reflected back into the plasma by collisions with the sidewalls before the flux can passivate the etch front\\nat the bottom of the feature. The lower conductance of the AR 10 feature requires a larger fluence of Cl radicals, and therefore a longer passivation time, to achieve the same as the AR 2 feature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"From the image, it can be observed thattThe Cl coverage for AR 2 is always higher than AR 10\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_31_figure_5.jpg","caption":"Figure 5. Removal step energies by terminations on the $\\mathrm{Ni / N}$ , $\\mathrm{Cu / N}$ , $\\mathrm{Ni / O}$ , and $\\mathrm{Cu / O}$ systems as functions of coverage, evaluated at $80^{\\circ}\\mathrm{C}$ . Two axes are shown. The x-axis on the left corresponds to the formamidine chemistry. The y-axis on the right corresponds to the formic acid chemistry. The bulk model results on the pristine and activated substrates are, respectively, marked with colored and black horizontal lines for comparison. The values are in eV per-metal atom etched.","id":"train/atomic-layer-etching/simulation-usecase/31/figure_5","sample_id":"atomic-layer-etching/simulation-usecase/31/figure_5","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"multi-axis chart"},{"panel_id":"d","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/Thermodynamics of Atomic Layer Etching Chemistry on Copper and Nickel Surfaces from First Principles.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":1091,"height":861,"image_format":"jpeg","image_sha256":"e9b1108735d904f7a68b3e3d58430af46b4b8cce645f3411dd96308d9a9175fd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":0,"width":485,"height":365},{"panel_id":"b","x":577,"y":0,"width":484,"height":367},{"panel_id":"c","x":11,"y":414,"width":480,"height":362},{"panel_id":"d","x":578,"y":415,"width":486,"height":359}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multi-axis chart showing the Gibbs free energy of removal (ΔG_rm at 80 °C) as a function of nitrogen coverage for the Ni/N system. Dual y-axes compare formamidine and formic acid chemistries across multiple crystallographic facets, with bulk reference energies indicated for context.\"},{\"panel_id\":\"b\",\"text\":\"Multi-axis chart showing removal energies versus nitrogen coverage for the Cu/N system. The data compare facet-dependent trends and reveal generally less favorable removal energetics than the corresponding Ni/N system.\"},{\"panel_id\":\"c\",\"text\":\"Multi-axis chart showing removal energies versus oxygen coverage for the Ni/O system. Several surface reconstructions are explicitly labeled, including (100) p(2×2) and (110) missing-row structures, enabling comparison of reconstruction-dependent stability.\"},{\"panel_id\":\"d\",\"text\":\"Multi-axis chart showing removal energies versus oxygen coverage for the Cu/O system. The figure highlights reconstruction-dependent trends, including (110) (2×1)-PR, and compares surface removal energetics against bulk reference states.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Coverage θ_N (Å⁻²) | Blue Solid | Green Dash | Red Dash-Dot | Blue Dash | Purple Dash Dot | Yellow Solid |Teal Dash |\\n|---|---|---|---|---|---|---|---|\\n| 0.01 | ~ 0.80 | ~ 0.40 | ~ 0.3 | ~ 0.5 | ~ 0.6 | ~ 0.5 | ~ 0.4 |\\n| 0.05 | ~ 0.75 | ~ 0.45 | ~ 0.3 | ~ 0.4 | ~ 0.5 | ~ 0.4 | ~ 0.4 |\\n| 0.10 | ~ 0.30 | ~ 0.25 | ~ -0.2| ~ 0.2 | ~ 0.4 | ~ 0.2 | ~ 0.1 |\\n| 0.15 | - | ~ -0.25| ~ -0.6| - | ~ -0.1| ~ -0.3 | ~ -0.3 |\"},{\"panel_id\":\"b\",\"text\":\"| Coverage θ_N (Å⁻²) | Blue Solid | Green Dash | Red Dash-Dot | Blue Dash | Purple Dash Dot | Yellow Solid |Teal Dash |\\n|---|---|---|---|---|---|---|---|\\n| 0.01 | ~ 0.0 | ~ -0.20 | ~ -0.25 | ~ -0.15 | ~ -0.15 | ~ -0.10 | ~ -0.10 |\\n| 0.05 | ~ 0.5 | ~ -0.15 | ~ -0.20 | ~ -0.20 | ~ -0.05 | ~ -0.10 | ~ -0.10 |\\n| 0.10 | ~ -0.2 | ~ -0.30 | ~ 0.40 | - | - | ~ -0.25 | ~ -0.20 | \\n| 0.15 | ~ -0.5 | - | - | - | - | - | - |\"},{\"panel_id\":\"c\",\"text\":\"| Coverage θ_N (Å⁻²) | Blue Solid | Green Dash | Red Dash-Dot | Blue Dash | Purple Dash Dot | Yellow Solid |Teal Dash |\\n|---|---|---|---|---|---|---|---|\\n| 0.01 | ~ 0.95 | ~ 0.40 | ~ 0.60 | ~ 0.60 | ~ 0.75 | ~ 0.75 | ~ 0.75 |\\n| 0.05 | ~ 0.80 | ~ 0.40 | ~ 0.50 | ~ 0.50 | ~ 0.75 | ~ 0.70 | ~ -0.10 |\\n| 0.10 | ~ 0.25 | ~ 0.20 | ~ 0.00 | ~ 0.25 | ~ 0.25 | ~ 0.20 | ~ -0.20 | \\n| 0.15 | ~ -0.10 | ~ -0.10| ~ -0.50| ~ 0.00 | ~ -0.10| ~ -0.10 | ~ -0.10 |\"},{\"panel_id\":\"d\",\"text\":\"| Coverage θ_N (Å⁻²) | Blue Solid | Green Dash | Red Dash-Dot | Blue Dash | Purple Dash Dot | Yellow Solid |Teal Dash |\\n|---|---|---|---|---|---|---|---|\\n| 0.01 | ~ 0.30 | ~ 0.00 | ~ 0.10 | ~ 0.10 | ~ 0.15 | ~ 0.15 | ~ 0.35 |\\n| 0.05 | ~ 0.20 | ~ 0.10 | ~ 0.00 | ~ 0.10 | ~ 0.20 | ~ 0.05 | ~ 0.15 |\\n| 0.10 | ~ 0.00 | ~ 0.00 | ~ -0.25| ~ -0.05| ~ 0.00 | ~ -0.05 | ~ 0.00 | \\n| 0.15 | ~ -0.40 | ~ -0.25| ~ -0.80| ~ -0.20| ~ -0.20| ~ -0.35 | ~ -0.20 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It reflects how the removal energy changes with nitrogen coverage, indicating the sensitivity of surface stability to adsorbate density.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the energy generally increases (becomes more positive and less favorable) as coverage increases.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Subfigure (c) labels p(2×2) and c(2×2) reconstructions on the (100) surface and (2×1)-MR and (3×1)-MR missing-row reconstructions on the (110) surface. At low oxygen coverage, the (110) (2×1)-MR reconstruction shows the lowest ΔG_rm values, indicating the most favorable removal energetics among the labeled structures.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It suggests that both chemistries follow comparable surface reaction energetics. Either pathway could drive controlled removal if conditions are tuned for the appropriate surface state, giving flexibility in precursor choice for ALE design.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_31_figure_6.jpg","caption":"Figure 6. Wulff construction-averaged removal step energies as functions of coverage (dashed lines) for (a) nickel and (b) copper systems. The solid lines correspond to the results from the bulk model for the pristine (black) and modified (colored) systems. The values are in eV per-metal atom etched.","id":"train/atomic-layer-etching/simulation-usecase/31/figure_6","sample_id":"atomic-layer-etching/simulation-usecase/31/figure_6","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/Thermodynamics of Atomic Layer Etching Chemistry on Copper and Nickel Surfaces from First Principles.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":670,"height":900,"image_format":"jpeg","image_sha256":"8bfd0231d7ff76934762f62cdbde0ba2cec378c2b943bcd98a255b4a3fb799db","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":17,"width":667,"height":433},{"panel_id":"b","x":3,"y":473,"width":664,"height":426}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multi-axis line chart showing Wulff-averaged Gibbs free energies of removal (ΔG_rm at 80 °C) for nickel as a function of surface coverage. The left y-axis corresponds to formamidine (HFamd) chemistry and the right y-axis to formic acid (HFA). Horizontal lines indicate bulk reference energies for pristine Ni and modified Ni₃N.\"},{\"panel_id\":\"b\",\"text\":\"Multi-axis line chart showing Wulff-averaged removal energies for copper as a function of coverage. Dual y-axes distinguish formamidine and formic acid chemistries, with bulk reference lines for Cu and Cu₃N included for comparison.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Coverage θ (Å⁻²) | Del_G (HFAmd) (Ni/N)| Del_G (HFA) (Ni/N) | Del_G (HFAmd) (Ni/O)| Del_G (HFA) (Ni/O) |\\n|---|---|---|---|---|\\n| 0.01 | ~ 0.60 | ~ 0.85 | ~ 0.75 | ~ 0.95 |\\n| 0.05 | ~ 0.50 | ~ 0.75 | ~ 0.60 | ~ 0.85 |\\n| 0.10 | ~ 0.35 | ~ 0.60 | ~ 0.20 | ~ 0.50 |\\n| 0.15 | ~ -0.20| ~ 0.00 | ~ -0.10| ~ 0.20 |\\n| 0.20 | - | - | ~ -0.40| ~ -0.20 |\"},{\"panel_id\":\"b\",\"text\":\"| Coverage θ (Å⁻²) | Del_G (HFAmd) (Cu/N)| Del_G (HFA) (Cu/N) | Del_G (HFAmd) (Cu/O)| Del_G (HFA) (Cu/O) |\\n|---|---|---|---|---|\\n| 0.01 | ~ 0.20 | ~ 0.20 | ~ 0.30 | ~ 0.30 |\\n| 0.05 | ~ 0.00 | ~ 0.05 | ~ 0.20 | ~ 0.20 |\\n| 0.10 | ~ -0.20| ~ 0.15 | ~ 0.00 | ~ 0.00 |\\n| 0.15 | - | - | ~ -0.20| ~ -0.10|\\n| 0.20 | - | - | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Formamidine (HFamd) — left y-axis, -Formic acid (HFA) — right y-axis\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Bulk reference lines provide a baseline to evaluate if surface removal is energetically accessible. Comparing these helps determine if etching remains surface-limited rather than bulk-like, which is essential for achieving atomic-layer control. It's also useful for identifying when modified surface layers become easier to remove than the pristine bulk material.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The trend suggests that once sufficient surface coverage is achieved, removal becomes thermodynamically favorable without requiring continued activation. This behavior supports self-limiting etching, where removal naturally saturates after one atomic layer is processed.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_6.jpg","caption":"FIG. 6. Amount of Si etched (in units of $\\mathrm{A}$ ) (blue lines) and Cl uptake (red lines) as a function of cycle number for $\\mathrm{Si - Cl_2 - Ar}$ ALE simulation using $100\\mathrm{eV}$ $\\mathrm{Ar^+}$ . One cycle consists of $28.2\\mathrm{ML}$ of $\\mathrm{Cl}_2$ molecule impacts and $28.2\\mathrm{ML}$ of $\\mathrm{Ar^+}$ impacts. The surface is nearly saturated with Cl before ion bombardment starts each cycle. Ion bombardment reduces the Cl content of the layer (shown as an equivalent surface coverage of $\\mathrm{Cl / cm^2}$ ).","id":"train/atomic-layer-etching/simulation-usecase/6/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_6","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":675,"height":428,"image_format":"jpeg","image_sha256":"b9ff54633a63f0101dcad3d42c903b3704c574e242610dec7e33238ca40e69d1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":428}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This multi-axis chart tracks the progression of Si etching and Cl uptake across five repeated cycles under 100 eV Ar⁺ ion bombardment. The red curve (left y-axis) indicates the amount of Si etched per cycle, which increases sharply during each ion bombardment step and then returns to baseline, showing a reproducible, step-like etching profile. Meanwhile, the blue line (right y-axis) demonstrates a continuous, linear increase in chlorine uptake with each cycle, indicating cumulative surface adsorption. Together, these trends reveal a consistent etch–adsorb dynamic where physical sputtering removes Si while chemical Cl incorporation steadily rises, likely due to residual Cl interactions at the surface\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle Number | Si Etched (Å) | Cl Uptake (Cl/cm² × 10¹⁵) |\\n|--------------|----------------|----------------------------|\\n| 0 | 0 | 0.10 |\\n| 1 | 32 | 0.22 |\\n| 2 | 32 | 0.34 |\\n| 3 | 32 | 0.46 |\\n| 4 | 32 | 0.58 |\\n| 5 | 32 | 0.70 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Si etching profile exhibits a periodic, stepwise increase and reset pattern with each cycle, reflecting ion-driven material removal during plasma exposure. In contrast, the chlorine uptake increases steadily without any resetting, indicating cumulative surface incorporation. This divergence highlights the physical versus chemical nature of each process: sputtering is transient and self-limiting per cycle, whereas adsorption builds progressively with repeated Cl exposure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cl uptake (Cl/cm² × 10¹⁵)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Cl₂ exposure, Pump and purge, Ar⁺ bombardment, Pump and purge\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_7.jpg","caption":"FIG. 7. Amount of Si etched in units of $\\dot{A}$ (blue lines) and Cl uptake (red lines) during the final cycle for the $\\mathrm{Si - Cl_2 - Ar}$ ALE simulation using $100\\mathrm{eVAr^{+}}$ The final portion of the ion bombardment step (purple dashed-dotted line) is used to calculate the etch yield shown as the purple dashed-dotted line. The purple dashed-dotted line is extrapolated to the estimated experimental $\\mathsf{Ar}^+$ fluence.","id":"train/atomic-layer-etching/simulation-usecase/6/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_7","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":669,"height":425,"image_format":"jpeg","image_sha256":"622fa2e49e26029251a18f19be61e72c00740aa2a49bbc5484896e13bdc66f42","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":425}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This multi-axis chart illustrates the relationship between species dosage (Cl₂ or Ar⁺/cm²) and two parameters: Si etching depth and chlorine uptake. The red curve (left y-axis) represents silicon etching at 100 eV Ar⁺, which begins only after Cl₂ exposure has saturated the surface. Etching increases steadily with Ar⁺ dosage and plateaus at ~9.8 Å, indicating the removal of one atomic layer of Si. The blue curve (right y-axis) shows Cl uptake, which rises quickly during Cl₂ exposure and saturates around 1.35 × 10¹⁵ Cl/cm². The dashed lines and arrows illustrate the sequential process: first Cl uptake during Cl₂ exposure, followed by Si etching upon Ar⁺ bombardment, revealing a synergistic etch mechanism.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Species Dosage (Cl₂ or Ar⁺/cm²) × 10¹⁵ | Si Etched (Å) | Cl Uptake (Cl/cm²) × 10¹⁵ |\\n|----------------------------------------|---------------|----------------------------|\\n| 0 | 0 | 0 |\\n| 10 | 0 | 0.75 |\\n| 20 | 0 | 1.25 |\\n| 25 | 0 | 1.35 |\\n| 30 | 1.5 | 1.35 |\\n| 50 | 4 | 1.35 |\\n| 75 | 6.5 | 1.35 |\\n| 100 | 9.0 | 1.35 |\\n| 125 | 9.8 | 1.35 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Chlorine uptake increases rapidly during initial Cl₂ exposure and saturates near 1.35 × 10¹⁵ Cl/cm², showing a self-limiting surface reaction. In contrast, silicon etching does not begin during Cl₂ exposure but increases progressively during the Ar⁺ dosage phase. This distinction highlights that Cl₂ alone does not etch Si, but pre-functionalises the surface, enabling etching when energy is provided by Ar⁺ bombardment. The etching depth reaches a maximum around 9.8 Å, corresponding to the removal of a single Si layer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.35 × 10¹⁵ Cl/cm².\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Cl adsorption, Surface saturation, Ar⁺ bombardment, Si–Cl bond breaking, Silicon etching\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_8_fig_11.jpg","caption":"FIG. 11. Al2p XPS peak area and peak binding energy after 30 ALE cycles as a function of table temperature. The binding energies of $\\mathrm{AlF}_3$ and $\\mathrm{Al}_2\\mathrm{O}_3$ have been included as dashed lines to show the transition between the two binding environments. The insets show the fitted Al2p XPS spectra for the films etched at 100 and $200^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/simulation-usecase/8/fig_11","sample_id":"atomic-layer-etching/simulation-usecase/8/fig_11","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/Isotropic atomic layer etching of GaN using SF6 plasma and AI(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":675,"height":523,"image_format":"jpeg","image_sha256":"63218294d8562bd5b4928ee54197b794d5e5ad6a6b60642f93d478db8a50da59","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":246,"y":123,"width":162,"height":160},{"panel_id":"a","x":0,"y":2,"width":669,"height":515}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between the table temperature and the Al2p peak area and peak binding energy of AlF3 and Al2O3.\"},{\"panel_id\":\"b\",\"text\":\"The inset spectra chart displays the intensity of Al2p peaks at different binding energies.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Table temperature°C | Al2p peak area (CPS eV) | Peak binding energy (eV) |\\n|---|---|---|\\n| 100 | 17000 | 76.0 |\\n| 125 | 17000 | 76.0 |\\n| 150 | 15000 | 76.0 |\\n| 175 | 5000 | 75.7|\\n| 200 | 2000 | 74.7 |\\n| 225 | 2000 | 74.5 |\\n| 250 | 2000 | 74.7 |\\n| 275 | 2000 | 74.5 |\\n| 300 | 2000 | 74.6 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding energy (eV) | Intensity (CPS) |\\n|---|---|\\n| 72 | 0 |\\n| 74 | 0 |\\n| 76 | Peak |\\n| 78 | 0 |\\n| 80 | 0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems that upon etching there is a shift in binding energy.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All data points are from films after 30 cycles of etching. There is way less al2p peak intensity for 200 degrees celcius indicating a higher EPC.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A reason could be that fluorine species get more volatile at higher temperatures, meaning they will leave the surface, resulting in more Al2O3.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Temperatures above 200 degrees celcius show almost no fluorine.\"}]}]"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_13_fig_1.jpg","caption":"FIG. 1. Dependence of the Si content in the $\\mathrm{Ti - Si - N}$ films and deposition thickness per cycle on the $\\mathrm{SiH_4}$ partial pressure for the films grown on $\\mathrm{SiO_2}$ at the substrate temperature of $180^{\\circ}\\mathrm{C}$ . $\\mathrm{Ti - Si - N}$ films were grown by sequential supply of TDMAT for $5 \\mathrm{s}$ , $\\mathrm{SiH_4}$ for $10 \\mathrm{s}$ , and $\\mathrm{NH_3}$ for $10 \\mathrm{s}$ .","id":"train/atomic-layer-deposition/experimental-usecase/13/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/13/fig_1","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between the Si content and the film thickness, and the partial pressure of SiH4.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Partial pressure of SiH₄ [Pa] | Si contents [at.%] | Film thickness per cycle [nm/cycle] |\\n|---|---|---|\\n| 0.1 | 17 | 0.25 |\\n| 1 | 15 | 0.23 |\\n| 10 | 18 | 0.21 |\\n| 100 | 19 | 0.19 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the partial pressure increases, so does the Si content, albeit slightly.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At that pressure, the Si content is closer to 15 at% and the film thickness is around 0.3 nm/cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In this case, the Si deposited through MOALD is not comparable with that deposited through MOCVD, because the latter increases logarithmically with the partial pressure of SiH4, which differs with the data shown in the figure.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":601,"height":513}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/Jae-Sik Min et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":605,"height":519,"image_format":"jpeg","image_sha256":"b35a81d8e759d4a2f739ef56a1e1ba1b6d9e872f0da3939fbc7c8773623d3143","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_13_fig_2.jpg","caption":"FIG. 2. Dependence of the Si content in the $\\mathrm{Ti - Si - N}$ films and deposition thickness per cycle on the $\\mathrm{SiH_4 / NH_3}$ ratio for the films grown on $\\mathrm{SiO_2}$ at the substrate temperature of $180^{\\circ}\\mathrm{C}$ . $\\mathrm{SiH_4}$ and $\\mathrm{NH_3}$ were simultaneously supplied in the sequence of TDMAT for $5\\mathrm{s}$ and $\\mathrm{SiH_4 / NH_3}$ for $10\\mathrm{s}$ . On the contrary, when TDMAT and $\\mathrm{NH_3}$ were alternately supplied without $\\mathrm{SiH_4}$ , the saturated TiN deposition thickness per cycle was $0.44~\\mathrm{nm / cycle}$ .","id":"train/atomic-layer-deposition/experimental-usecase/13/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/13/fig_2","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relation between SiH₄/NH₃ ratio and Si content and film thickness per cycle. As the ratio increases, the Si content increases until it reaches a plateau, while the film thickness per cycle decreases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| SiH₄/NH₃ ratio | Si Contents [at.%] | Film thickness per cycle [nm/cycle] |\\n|---|---|---|\\n| 10⁻² | 1 | 0.38 |\\n| 10⁻¹ | 18 | 0.28 |\\n| 10⁰ | 23 | 0.19 |\\n| 10¹ | 23 | 0.01 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There is an increase in the Si content until SiH4/NH3 ratio of 1 is reached, where a plateau of 23 at% is achieved. Conversely, the film thickness decreases with increasing Si content and SiH4/NH3 ratio.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Saturation is reached at a value of 23 at% when the SiH4/NH3 ratio is 1.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film thickness decreases as the Si content increase, due to a reduction in the number of molecules caused by a SiH4 blocking effect, or NH3 deficiency.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":602,"height":535}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/Jae-Sik Min et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":608,"height":539,"image_format":"jpeg","image_sha256":"e2b30c1f3b37d695bfdf01d35ae2eebad0fd7e36df3bd9015f8ff20bf025a52b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_18_fig_2.jpg","caption":"FIG. 2. (a) SE parameters $(\\Psi ,\\Delta)$ measured on blank Si substrate (solid line) and after 10 cycles $\\mathrm{ZrN}$ deposition (dotted line). (b) The dynamic SE parameter $\\Delta$ measured at $4.0\\mathrm{eV}$ for 10 cycles $\\mathrm{ZrN}$ deposition. Systematic variation in $\\Delta$ with precursor pulse $(\\mathrm{t}_1)$ , plasma exposure $(\\mathrm{t}_3)$ , and inert gas purges $(\\mathrm{t}_2$ and $\\mathrm{t}_4)$ are highlighted.","id":"train/atomic-layer-deposition/experimental-usecase/18/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/18/fig_2","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Spectroscopic ellipsometry parameters Ψ and Δ versus photon energy for a blank Si substrate and after 10 ZrN PEALD cycles. Spectral shifts after deposition confirm ultrathin ZrN film formation and demonstrate SE sensitivity to early-stage growth.\"},{\"panel_id\":\"b\",\"text\":\"Dynamic evolution of ellipsometric parameter Δ at 4.0 eV during 10 PEALD cycles. Periodic, step-like changes in Δ aligned with precursor, plasma, and purge steps provide in-situ evidence of self-limiting, cycle-by-cycle ZrN growth.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Photon Energy (eV) | Δ (°) | Ψ (°) |\\n|---|---|---|\\n| 1.0 | ~175 | ~35 |\\n| 2.0 | ~170 | ~33 |\\n| 3.0 | ~165 | ~32 |\\n| 4.0 | ~150 | ~30 |\\n| 5.0 | ~165 | ~31 |\\n| 6.0 | ~170 | ~32 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Δ (°) |\\n|---|---|\\n| 100 | ~144 |\\n| 200 | ~143 |\\n| 300 | ~141 |\\n| 400 | ~140 |\\n| 500 | ~139 |\\n| 550 | ~138 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The in-situ ellipsometry measurements enable real-time monitoring of ZrN film growth, allowing direct observation of cycle-resolved thickness changes and confirmation of self-limiting behavior. This capability supports precise control of growth per cycle, rapid identification of saturation conditions, and reliable optimization of PEALD parameters for uniform, ultrathin ZrN films.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both Ψ and Δ exhibit systematic spectral shifts after 10 cycles, indicating the formation of an ultrathin ZrN film.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Spectral shift in Ψ and Δ after deposition, Periodic step-like changes in Δ during each ALD cycle, Reproducibility of Δ response across multiple cycles, Distinct Δ responses during precursor and plasma steps\"}]}]","bbox":[{"panel_id":"a","x":13,"y":9,"width":494,"height":357},{"panel_id":"b","x":524,"y":11,"width":479,"height":355}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/Triratna Muneshwar et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":1003,"height":366,"image_format":"jpeg","image_sha256":"f4210e67b9670ff5a81442730500152efe3b346a34cf84ffeec5430209fa7b72","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_27_fig_1.jpg","caption":"Fig. 1. Growth rate and resistivity of TiN films deposited by remote PEALD technique using TDMAT precursor and nitrogen plasma as a function of deposition temperature. Inset of this figure shows the film thickness as a function of process cycles.","id":"train/atomic-layer-deposition/experimental-usecase/27/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/27/fig_1","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between deposition temperature and thickness and resistivity of a material.\"},{\"panel_id\":\"b\",\"text\":\"The line chart displays the thickness of a material as a function of the number of cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition Temperature (°C) | Thickness (nm) | Resistivity (Ω·cm) |\\n|---|---|---|\\n| 175 | 15 | 500 |\\n| 200 | 19 | 450 |\\n| 250 | 19 | 350 |\\n| 300 | 19 | 400 |\\n| 350 | 25 | 500 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Cycles | Thickness (nm) |\\n|---|---|\\n| 20 | 8 |\\n| 40 | 15 |\\n| 60 | 22 |\\n| 80 | 30 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The GPC is 20/50 = 0.4 nm/cycle.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A temperature window is a range of temperatures where the GPC is independent of temperature. The graph shows this between 200 and 300 degrees celcius.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Within the range of 200 to 300 degrees celcius there is a change in resistivity, indicating that the temperature window does not apply for the resistivity.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A possible explaination for more growth at higher temperatures is parasitic CVD due to decomposition of precursor molecules.\"}]}]","bbox":[{"panel_id":"b","x":182,"y":21,"width":257,"height":184},{"panel_id":"a","x":3,"y":5,"width":659,"height":463}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/Ju Youn KIM et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":664,"height":469,"image_format":"jpeg","image_sha256":"279593c94d95a41565944df4a37503d9c29cf9d9253f76b169df26f72a6afa9a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_11.jpg","caption":"Figure 11. Time-resolved TS behavior of the GeSe selector devices through fabrication using (a) the conventional ALD process and (b) the ALD-DFM process. Magnified view of the transition region in (b) to the (c) ON-state and (d) OFF-state.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_11","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_11","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"multi-axis chart"},{"panel_id":"d","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a multi-axis chart with voltage and current plotted against time. The voltage and current traces are shown for two different channels, V_Ch1 and V_DUT, and I_DUT respectively where there is a peak after 2 micro seconds.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows a multi-axis chart with voltage and current plotted against time. The voltage and current traces are shown for two different channels, V_Ch1 and V_DUT, and I_DUT respectively where there is a peak after 2 micro seconds.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows a multi-axis chart with voltage and current plotted against time. The voltage and current traces are shown for two different channels, V_Ch1 and V_DUT, and I_DUT respectively in the build up phase for the switch.\"},{\"panel_id\":\"d\",\"text\":\"The figure shows a multi-axis chart with voltage and current plotted against time. The voltage and current traces are shown for two different channels, V_Ch1 and V_DUT, and I_DUT respectively for the settling after the switch.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (µs) | Voltage (V) | Current (mA) |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 0.5 | 0.5 | 0 |\\n| 1 | 1 | 0 |\\n| 1.5 | 2 | 3 |\\n| 2 | 3 | 5 |\\n| 2.5 | 2 | 3 |\\n| 3 | 1 | 0 |\\n| 3.5 | 0.5 | 0 |\\n| 4 | 0 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (µs) | Voltage (V) | Current (mA) |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 0.5 | 1 | 0 |\\n| 1 | 1.8 | 0 |\\n| 1.5 | 2 | 12 |\\n| 2 | 2 | 20 |\\n| 2.5 | 1.5 | 10 |\\n| 3 | 1.2 | 5 |\\n| 3.5 | 1 | 0 |\\n| 4 | 0 | 0 |\"},{\"panel_id\":\"c\",\"text\":\"| Time (µs) | Voltage (V) | Current (mA) |\\n|---|---|---|\\n| 0.9 | 1.9 | 0 |\\n| 1 | 2 | 0 |\\n| 1.1 | 1.5 | 8 |\\n| 1.2 | 1.9 | 8 |\"},{\"panel_id\":\"d\",\"text\":\"| Time (µs) | Voltage (V) | Current (mA) |\\n|---|---|---|\\n| 3.0 | 1.2 | 5 |\\n| 3.1 | 1.2 | 3 |\\n| 3.2 | 1.2 | 0 |\\n| 3.3 | 1.0 | 0 |\\n| 3.4 | 0.8 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 microseconds\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2.1 V.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The moment at which the GeSe transitions from a resistive phase to a low resistance mode.\"}]}]","bbox":[{"panel_id":"a","x":15,"y":38,"width":312,"height":270},{"panel_id":"b","x":363,"y":38,"width":312,"height":270},{"panel_id":"c","x":15,"y":354,"width":312,"height":268},{"panel_id":"d","x":363,"y":354,"width":312,"height":268}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":675,"height":622,"image_format":"jpeg","image_sha256":"82e317b84a292fc23be9c22f3a10bd652a321e05a85cecf8b315ab67a4703572","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_4.jpg","caption":"Figure 4. (a) Layer densities versus cycle number to confirm the saturation growth rate without an incubation cycle. (b) Effect of the substrate temperature on the growth rate.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_4","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the layer density and composition of GeSe(1-x) as a function of cycle number for SiO2, TiN, and SiO2, DFM.\"},{\"panel_id\":\"b\",\"text\":\"The chart illustrates the growth rate and composition of GeSe(1-x) as a function of substrate temperature for SiO2 and TiN.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle Number | Layer Density (µg/cm²) | x in GeSe(1-x) |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 100 | 5 | 0.5 |\\n| 200 | 9 | 0.5 |\\n| 400 | 17 | 0.5 |\"},{\"panel_id\":\"b\",\"text\":\"| Substrate Temperature (°C) | Growth rate (ngcm-2cy-1) | x in GeSe(1-x) |\\n|---|---|---|\\n| 70 | 57 | 0.5 |\\n| 90 | 26 | 0.5 |\\n| 110 | 19 | 0.5 |\\n| 130 | 10 | 0.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For perfect ALD, every cycle, the amount of deposited material is the same, meaning there should be a linear relation between the cycle number and the layer density.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For all substrates and dosing methods the composition is the same, i.e. Ge:Se is 1:1. This means that differently dosing the precursors will not result in different composition.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This can be caused by desorption of adsorbed species leading to less film growth.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With increasing temperature the Ge contribution increases in the film, meaning there is less Se. This means that the Se precursor desorbs more easily.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":46,"width":508,"height":408},{"panel_id":"b","x":522,"y":44,"width":521,"height":411}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":1048,"height":458,"image_format":"jpeg","image_sha256":"fb327650cc20cc06c97109a92e542c76603d522aa76e401420908901195e9697","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_31_figure_3.jpg","caption":"Figure 3. Growth rate and resistivity vs precursor exposure time of PE-ALD Co using (a) $\\mathrm{CoCp(CO)_2}$ and (b) $\\mathrm{CoCp_2}$ as a Co precursor, respectively.","id":"train/atomic-layer-deposition/experimental-usecase/31/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/31/figure_3","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"For PE-ALD Co on SiO₂ using CoCp(CO)₂ at 300 °C, the growth rate increases with substrate exposure time and reaches a maximum at longer exposure, while the resistivity initially decreases and then increases at high exposure times, indicating an optimal time window for achieving low-resistivity cobalt films.\"},{\"panel_id\":\"b\",\"text\":\"In the PE-ALD Co process using CoCp₂ at 300 °C, the growth rate increases rapidly at short exposure times and then saturates, while the resistivity remains relatively low and stable with increasing exposure time, suggesting a more robust and self-limiting growth behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| tS (s)|Growth Rate (Å/cycle)|Resistivity (µΩcm)|\\n|------------------|---------------------|------------------|\\n|0|0|0|\\n|1|2|250|\\n|2|1|100|\\n|3|0.5|50|\\n|4|0|25|\"},{\"panel_id\":\"b\",\"text\":\"| tS (s)|Growth Rate (Å/cycle)|Resistivity (µΩcm)|\\n|------------------|---------------------|------------------|\\n|0|0|0|\\n|2|0.5|250|\\n|4|0.5|150|\\n|6|0.5|100|\\n|8|0.5|50|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"NO\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"CoCp₂.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Growth saturation confirms true ALD behavior, ensuring precise thickness control and excellent conformality on complex device structures. The consistently low resistivity obtained with CoCp₂ indicates high-purity metallic cobalt, which is essential for interconnect and contact applications in advanced CMOS technology. Together, these properties make CoCp₂ a suitable precursor for scalable and reliable cobalt deposition.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Lack of growth-rate saturation, Strong increase in resistivity at longer exposure times, Unstable electrical properties, Evidence of CVD-like or decomposition-driven growth\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":542,"height":370},{"panel_id":"b","x":3,"y":386,"width":536,"height":355}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/Han-Bo-Ram Lee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":544,"height":744,"image_format":"jpeg","image_sha256":"05a494ef100bcaf930a71c2c186e8a732fa89c0bcfa2edbb38b0510fef0ea07b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_36_fig_10.jpg","caption":"Fig. 10 a Transfer characteristics and b log $I_{\\mathrm{DS}}$ vs $V_{\\mathrm{GS}}$ plots of the conventional HEMT and the $\\mathrm{Ga_2O_3}$ MOS-HEMT","id":"train/atomic-layer-deposition/experimental-usecase/36/fig_10","sample_id":"atomic-layer-deposition/experimental-usecase/36/fig_10","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the drain current (IDS) and transconductance (gm) for both Ni/Au-HEMT and Ga2O3 MOS-HEMT as a function of gate-source voltage (VGS) with a VDS value of 8V.\"},{\"panel_id\":\"b\",\"text\":\"The chart displays the drain current (IDS) of Ni/Au-HEMT and Ga2O3 MOS-HEMT as a function of gate-source voltage (VGS) on a logarithmic scale with a VDS value of 8V.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| IDS (mA/mm) | Ni/Au-HEMT | Ga2O3 MOS-HEMT |\\n| --- | --- | --- |\\n|-6| 0 | 0 |\\n|-4| 0 | 0 |\\n|-2| 300 | 400 |\\n|0| 500 | 800 |\\n|2| 800 | 1000 |\"},{\"panel_id\":\"b\",\"text\":\"| IDS (mA/mm) | Ni/Au-HEMT | Ga2O3 MOS-HEMT |\\n| --- | --- | --- |\\n| -6 | 10^-3 | 10^-4 |\\n| -4 | 10^-1 | 10^2 |\\n| -2 | 10^2 | 10^2 |\\n| 0 | 10^3 | 10^3 |\\n| 2 | 10^3 | 10^3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ni/Au-HEMT and Ga2O3 MOS-HEMT were both performed with a V_DS value of 8 V.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the subfigure a, the Ga2O3 MOS-HEMT has higher transcondutance values.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The samples remain constant until approximately -4 V, at which point they both increases and reach a plateau.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The subthreshold swing parameter is higher for the Ni/Au-HEMT sample with a value of 188 mV/dec.\"}]}]","bbox":[{"panel_id":"a","x":8,"y":26,"width":427,"height":427},{"panel_id":"b","x":453,"y":33,"width":344,"height":422}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/Huan-Yu Shih et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":797,"height":455,"image_format":"jpeg","image_sha256":"b224e365c23d3b47e197db4d9638e0287052928f96bd46a32104e259abddafa1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_36_fig_13.jpg","caption":"Fig. 13 Microwave power characteristics of the conventional HEMT and the $\\mathrm{Ga_2O_3}$ MOS-HEMT","id":"train/atomic-layer-deposition/experimental-usecase/36/fig_13","sample_id":"atomic-layer-deposition/experimental-usecase/36/fig_13","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the output power and power drain, and power added efficiency as a function of the input power at a frequency of 2.4G and drain source voltage of 16V, for Ni/Au-HEMT and Ga2O3 MOS-HEMT.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Input Power (dBm) | G_p Ga2O3 | G_p Ni/Au | P_out Ga2O3 | P_out Ni/Au | P.A.E. Ni/Au | P.A.E. Ga2O3 |\\n| --- | --- | --- | --- | --- | --- | --- |\\n| -25 | 25 | 24 | 0 | 0 | 0 | 0 |\\n| -20 | 25 | 24 | 4 | 3 | 0 | 0 |\\n| -15 | 25 | 24 | 9 | 8 | 0 | 0 |\\n| -10 | 25 | 24 | 15 | 14 | 2 | 2 |\\n| -5 | 25 | 24 | 19 | 18 | 8 | 8 |\\n| 0 | 25 | 24 | 23 | 22 | 25 | 24 |\\n| 5 | 20 | 19 | 20 | 19 | 45 | 35 |\\n| 10 | 15 | 14 | 17 | 16 | 50 | 40 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They were performed at 2.4 G and 16 V.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The output power of both the Ni/Au and G2O3 samples increases with the input power.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At approximately 0 dBm.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":3,"y":10,"width":621,"height":465}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/Huan-Yu Shih et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":625,"height":475,"image_format":"jpeg","image_sha256":"86f1078552c1840ea35b64569c2e45185c9fda76b588236b05b1970d7ed1e736","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_36_fig_5.jpg","caption":"Fig. 5 Refractive index and extinction coefficient of the $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ thin film plotted with respect to the wavelength","id":"train/atomic-layer-deposition/experimental-usecase/36/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/36/fig_5","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the extinction coefficient and refractive index of a material as a function of wavelength. Both of them decreases as the wavelength value increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | Extinction coefficient | Refractive index |\\n|----------------|------------------------|------------------|\\n| 300 | 0 | 2.2 |\\n| 400 | 0 | 2.0 |\\n| 500 | 0 | 1.9 |\\n| 600 | 0 | 1.9 |\\n| 700 | 0 | 1.9 |\\n| 800 | 0 | 1.9 |\\n| 900 | 0 | 1.9 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The refractive index (n) and extinction coefficient (k) of the Ga2O3 thin film.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At lower wavelength values, the extinction coefficient is 0.15. However, after 300 nm, it decreases rapidly and significantly to 0.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The refractive index exhibit higher values than the extinction coefficient.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both can be obtained using different models and spectroscopic ellipsometry measurements.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":12,"width":621,"height":393}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/Huan-Yu Shih et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":625,"height":406,"image_format":"jpeg","image_sha256":"36b4445ad8594fa37183fef95eb78420a0c85256a27be6ff107fef6572166c1e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_4_fig_1.jpg","caption":"Fig. 1. Growth rate and refractive index of $\\mathrm{HfO_2}$ films as a function of hafnium precursor pulse length. The water pulse and purge times were $0.5\\mathrm{s}$ . The error bars express the variation of the refractive index in each sample.","id":"train/atomic-layer-deposition/experimental-usecase/4/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/4/fig_1","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the growth rate and refractive index at 580 nm of HfO₂ deposited on borosilicate glass as a function of Hf[N(CH₃)(C₂H₅)₄] pulse length at a growth temperature of 250 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Hf[N(CH3)(C2H5)]4 PULSE LENGTH, s | GROWTH RATE, nm/cycle | REFRACTIVE INDEX AT 580 nm |\\n|---|---|---|\\n| 0.2 | 0.08 | 2.08 |\\n| 0.4 | 0.09 | 2.09 |\\n| 0.6 | 0.09 | 2.09|\\n| 0.8 | 0.09 | 2.09 |\\n| 1.0 | 0.09 | 2.08 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It first increases and then decreases after having reached a maximal refractive index of about 2.10 after 0.4 – 0.6 seconds. This can arise from the thermal decomposition of Hf[N(CH3)(C2H5)]4. This thermal decomposition, which may become more significant during longer exposure times, may slightly reduce the film density or change its composition. Although the changes in refractive index are measurable, they are however very small.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Borosilicate glass.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"250 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After 0.4 seconds, the growth rate no longer is affected by the pulse length, indicating that the surface reactions are self-limiting.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":641,"height":399}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":642,"height":403,"image_format":"jpeg","image_sha256":"dc6e84ee27a5c559e30e7fc0891ee55b534353bdc7283062a6d82015c1184669","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_4_fig_3.jpg","caption":"Fig. 3. Growth rate and refractive index of $\\mathrm{HfO_2}$ films as a function of growth temperature.","id":"train/atomic-layer-deposition/experimental-usecase/4/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/4/fig_3","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the growth rate of HfO₂ on borosilicate glass at various temperatures, along with the corresponding refractive index at 580 nm.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| GROWTH TEMPERATURE, °C | GROWTH RATE, nm/cycle | REFRACTIVE INDEX AT 580 nm |\\n|---|---|---|\\n| 150 | 0.10 | 2.08 |\\n| 175 | 0.09 | 2.08 |\\n| 200 | 0.09 | 2.10 |\\n| 225 | 0.09 | 2.09 |\\n| 250 | 0.09 | 2.09 |\\n| 275 | 0.10 | 2.08 |\\n| 300 | 0.12 | 2.06 |\\n| 325 | 0.15 | 2.05 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"150 to 325 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.4 s Hf[N(CH3)(C2H5)]4 exposure, 0.5 s purge, 0.5 s H2O exposure, 0.5 s purge.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The growth rate as a function of temperature is stable/constant from 200 to 250 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It varied between 2.05 and 2.10.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":642,"height":399}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":644,"height":406,"image_format":"jpeg","image_sha256":"9fda5b98f5039166a81521e8b225fe63a60bd6ade0d2baa6de95e4b553233980","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_4_fig_8.jpg","caption":"Fig. 8. Selected $CV$ and dissipation curves measured for $\\mathrm{Al / HfO_2 / Si}$ capacitor structures at $AC$ signal frequency of $500\\mathrm{kHz}$ . Labels indicate $\\mathrm{HfO_2}$ growth temperatures. The thickness of the films grown at $200^{\\circ}\\mathrm{C}$ and $300^{\\circ}\\mathrm{C}$ are $133\\mathrm{nm}$ and $178\\mathrm{nm}$ , respectively.","id":"train/atomic-layer-deposition/experimental-usecase/4/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/4/fig_8","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays capacitance and dissipation against bias voltage for two different growth temperatures of HfO₂.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| BIAS VOLTAGE, V | 200 °C, CAPACITANCE, nF | 300 °C, CAPACITANCE, nF | 200 °C, DISSIPATION, D | 300 °C, DISSIPATION, D |\\n|---|---|---|---|---|\\n| -4 | 0.16 | | 0.05 | |\\n| -3 | 0.16 | 0.15 | 0.05 | 0.1 |\\n| -2 | 0.15 | 0.14 | 0.05 | 0.1 |\\n| -1 | 0.12 | 0.12 | 0.1 | 0.5 |\\n| 0 | 0.04 | 0.04 | 0.05 | 0.025 |\\n| 1 | 0.03 | 0.04 | 0.025 | 0.025 |\\n| 2 | 0.03 | | 0.025 | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is 0.16 nF at -4 V and 0.03 nF at 2.5 V.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is 0.15 nF at -4 V and 0.04 nF at 1.5 V.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At about 0.5 and -0.5 V.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At about -0.25 and -0.5 V.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":555,"height":354}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":558,"height":358,"image_format":"jpeg","image_sha256":"4603bedd3a706fba1141ba86b271103093fde2767f9d671d9647f84f37511ec4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_40_fig_2.jpg","caption":"FIG. 2. Dependence of the growth rate and silicon content in the $\\mathrm{Ti - Si - N}$ films on the $\\mathrm{SiH_4}$ pulse time. The films were grown on $\\mathrm{SiO_2}$ at $350^{\\circ}\\mathrm{C}$ with the sequential supply of $\\mathrm{TiCl_4}$ for $1\\mathrm{s}$ , $\\mathrm{SiH_4}$ for $0\\mathrm{s}\\sim 15\\mathrm{s}$ , and $\\mathrm{N}_2 / \\mathrm{H}_2 / \\mathrm{Ar}$ plasma for $10\\mathrm{s}$ . The partial pressure of $\\mathrm{SiH_4}$ was fixed at 0.1 torr.","id":"train/atomic-layer-deposition/experimental-usecase/40/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/40/fig_2","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multi-axis chart showing the dependence of growth per cycle (left axis) and silicon atomic content (right axis) on SiH₄ pulse time during plasma-enhanced ALD of Ti–Si–N at 350 °C. Both quantities increase rapidly at short pulse times and saturate for SiH₄ exposures of ~8 s or longer, reaching ~0.7 Å/cycle growth and ~9–15 at.% Si, indicating self-limiting surface reactions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| SiH₄ pulse time (s) | Thickness per cycle (Å/cycle, left axis) | Si content (at.%, right axis) |\\n|--------------------|-------------------------------------------|-------------------------------|\\n| 0 | ~0.45 | ~0.0 |\\n| 1 | ~0.50 | ~4.0 |\\n| 2 | ~0.55 | ~5.0 |\\n| 4 | ~0.60 | ~7.5 |\\n| 6 | ~0.65 | ~8.0 |\\n| 8 | ~0.70 | ~9.0 |\\n| 12 | ~0.70 | ~9.0 |\\n| 16 | ~0.70 | ~9.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both the growth per cycle and the silicon content increase rapidly as the SiH₄ pulse time is extended from 0 to about 8 s. This reflects increased surface reaction completion during the SiH₄ exposure. Beyond this range, further increases in pulse time do not significantly change either quantity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Once the surface reactive sites available for Si incorporation are fully occupied during the SiH₄ half-cycle, additional precursor exposure cannot introduce more silicon. This reflects the self-limiting surface chemistry characteristic of ALD, where adsorption and reaction terminate once saturation is reached.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 8 s.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":634,"height":555}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":637,"height":561,"image_format":"jpeg","image_sha256":"4a1f3fd55c02d66873772763b31497ca784c5cc9dec3e25da07ed5573e0e1f72","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_40_fig_3.jpg","caption":"FiG. 3. Dependence of the growth rate and silicon content in the $\\mathrm{Ti - Si - N}$ films on the $\\mathrm{SiH_4}$ pulse time by different reactant exposure sequence. The reactants were supplied in the sequence of $\\mathrm{SiH_4}$ for $0\\mathrm{s} - 15\\mathrm{s}$ , $\\mathrm{TiCl_4}$ for $1\\mathrm{s}$ , and $\\mathrm{N}_2 / \\mathrm{H}_2 / \\mathrm{Ar}$ plasma for $10\\mathrm{s}$ .","id":"train/atomic-layer-deposition/experimental-usecase/40/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/40/fig_3","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multi-axis chart showing growth per cycle (left axis) and silicon atomic content (right axis) in plasma-enhanced ALD Ti–Si–N films deposited using a reversed reactant sequence (SiH₄ → TiCl₄ → N₂/H₂/Ar plasma). Both quantities increase with SiH₄ pulse time at short exposures and saturate at approximately 0.60–0.62 Å/cycle and 11–12 at.% Si for pulse times of ~8–10 s, indicating self-limiting surface reactions under this sequence.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|SiH4 Pulse Time (s) |Thickness (S-T-N) [Å/cycle]|Si Content (S-T-N) [at.%]|\\n|--------------------|-------------------------------|-------------------|\\n| 0 | ~0.46 | – |\\n| 2 | ~0.50 | ~7.5 |\\n| 4 | ~0.55 | ~8.0 |\\n| 6 | ~0.60 | ~10.0 |\\n| 8 | ~0.60 | ~11.0 |\\n| 10 | ~0.62 | ~12.0 |\\n| 12 | ~0.60 | ~12.0 |\\n| 14 | ~0.60 | ~12.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 8–10 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The silicon content increases rapidly at short SiH₄ pulse times, rising from below 8 at.% at 2 s to about 10–11 at.% by 6–8 s. Beyond this range, the silicon content plateaus near 11–12 at.% despite further increases in pulse time, indicating saturation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"When SiH₄ is pulsed first, its interaction with the surface is limited by the initial surface chemistry. The subsequent TiCl₄ pulse can occupy or replace reactive sites before nitrogen incorporation, reducing the number of sites available for silicon retention. This leads to lower final silicon incorporation compared with sequences where TiCl₄ primes the surface first.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":433,"height":382}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":436,"height":386,"image_format":"jpeg","image_sha256":"1cd211bc080a849c0c81f889ff8b11d69473d749969bc26d60567ccf3632b57a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_10.jpg","caption":"Fig. 10. Densities of TiN ALD films measured using QCM and surface profilometry measurements for long, medium and short reactant pulse sequences at deposition temperatures of $60 - 240^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_10","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_10","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows TiN ALD film density and porosity as functions of deposition temperature for short, medium, and long reactant pulse sequences. Film density increases with temperature for all pulse lengths, while porosity decreases correspondingly, indicating densification. Short pulse sequences exhibit the strongest temperature-driven densification, reaching ~3.0 g/cm³ at 240 °C with porosity near ~40%. Medium pulses show moderate densification, whereas long pulses yield comparatively low-density, high-porosity films at intermediate temperatures. Overall, the data indicate a strong coupling between pulse timing and thermal activation of film densification.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Pulse Length | Density (g/cm³) | Porosity (%) |\\n|---|---|---|---|\\n| 60 | Short | 1.8 | 65 |\\n| 60 | Medium | 1.5 | 70 |\\n| 120 | Short | 2.1 | 60 |\\n| 120 | Medium | 1.6 | 70 |\\n| 180 | Short | 2.6 | 50 |\\n| 180 | Medium | 2.0 | 60 |\\n| 180 | Long | 1.2 | 80 |\\n| 240 | Short | 3.0 | 42 |\\n| 240 | Medium | 2.2 | 60 |\\n| 240 | Long | 2.6 | 50 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing temperature leads to higher TiN film density for all pulse lengths. The trend is strongest for short pulses, where density rises sharply with temperature. Medium pulses show a more gradual increase, while long pulses remain relatively low in density at intermediate temperatures. This indicates temperature-activated densification that depends on pulse timing.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Short pulse sequences.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Higher density corresponds to lower porosity\\n-Lower density corresponds to higher porosity\\n-The inverse relationship holds for all pulse lengths\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":669,"height":620}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":672,"height":620,"image_format":"jpeg","image_sha256":"e31cb2de14954c0e6c7371dd16a6fe0b582d09233f93f580db3cc762e7a3f2d1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_4.jpg","caption":"Fig. 4. Mass deposited vs. number of AB cycles measured using the in situ QCM at $120^{\\circ}\\mathrm{C}$ for the long reactant pulses with a timing sequence of (100-10-20-30).","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_4","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows in situ QCM measurements of mass deposited during TiN ALD at 120 °C using long reactant pulses (100–10–20–30). The mass increases approximately linearly with the number of AB cycles, while the raw trace exhibits step-like features corresponding to individual precursor exposures. The equivalent TiN thickness, derived from the mass uptake, also increases linearly with cycle number. Together, these trends indicate stable, cycle-by-cycle growth consistent with self-limiting ALD behavior under long-pulse conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| AB Cycles | Mass Deposited (ng/cm²) | TiN Thickness (Å) |\\n|---|---|---|\\n| 0 | ~0 | ~0 |\\n| 1 | ~120 | ~1.5 |\\n| 3 | ~280 | ~4.5 |\\n| 5 | ~420 | ~7.0 |\\n| 7 | ~560 | ~10.0 |\\n| 10 | ~800 | ~15.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Each step corresponds to an individual precursor exposure within an AB cycle, producing a discrete mass increase. This staircase behavior is characteristic of self-limiting surface reactions rather than continuous CVD-like growth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It increases approximately linearly.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Linear mass accumulation indicates that each cycle deposits a nearly constant amount of material. This reflects uniform surface saturation and confirms that the process is operating in a true ALD regime.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":1,"y":0,"width":656,"height":655}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":664,"height":661,"image_format":"jpeg","image_sha256":"f168a87bfc15c9d7c7eda3a85de7f03dc5a49b3dfbb847b6c872d80086044f88","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_5.jpg","caption":"Fig. 5. (a) Mass deposition rate vs. TDMAT exposure time at $120^{\\circ}\\mathrm{C}$ on an initial TiN surface terminated with $\\mathrm{NH}_x^*$ species. (b) Mass deposition rate vs. $\\mathrm{NH}_3$ exposure time at $120^{\\circ}\\mathrm{C}$ on an initial TiN surface terminated with $\\mathrm{T}_2(\\mathrm{N}(\\mathrm{CH}_3)_2)_x^*$ species.","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_5","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows ALD saturation behavior for TiN growth at 120 °C by varying the exposure time of each reactant while monitoring mass deposition rate and equivalent thickness growth per cycle. In panel (a), increasing TDMAT exposure time produces a rapid rise in deposition rate at short times followed by a slower approach to a near-saturation regime at longer exposures, consistent with progressively more complete surface reaction of the metal precursor on an NHx*-terminated TiN surface.\"},{\"panel_id\":\"b\",\"text\":\"In panel (b), increasing NH₃ exposure time similarly increases deposition rate and then reaches a clear plateau around ~20 s, indicating saturation of the nitridation/ligand-exchange step on a surface terminated with precursor fragments. The plateau regions demonstrate self-limiting ALD chemistry, while the “short/medium/long” regimes highlight the exposure windows that transition from incomplete reaction to near-saturated growth.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TDMAT Exposure Time (s) | Mass Deposition Rate (ng/cm²/cycle) | TiN Growth Rate (Å/cycle) |\\n|---|---|---|\\n| 0 | ~0 | ~0.0 |\\n| 5 | ~39 | ~0.8 |\\n| 20 | ~46 | ~0.9 |\\n| 50 | ~52 | ~1.0 |\\n| 100 | ~55 | ~1.05 |\\n| 200 | ~60 | ~1.2 |\"},{\"panel_id\":\"b\",\"text\":\"| NH₃ Exposure Time (s) | Mass Deposition Rate (ng/cm²/cycle) | TiN Growth Rate (Å/cycle) |\\n|---|---|---|\\n| 0 | ~5 | ~0.1 |\\n| 2 | ~41 | ~0.8 |\\n| 5 | ~49 | ~0.9 |\\n| 10 | ~55 | ~1.05 |\\n| 20 | ~63 | ~1.2 |\\n| 40 | ~63 | ~1.2 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plateau indicates that ligand removal and nitridation reactions have reached completion across the surface. All available precursor-derived fragments have been converted into a stable Ti–N bonding environment. This confirms that the NH₃ half-reaction is self-limiting.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Knowing the saturation exposure allows selection of the shortest NH₃ pulse that still achieves complete surface reaction. This minimizes cycle time and reagent usage while maintaining consistent growth. Such optimization is critical for scalable and cost-efficient ALD processing.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At short exposures, reactant delivery is insufficient to fully react with all available surface sites, so growth is limited by incomplete surface coverage. As exposure time increases, more molecules reach the surface until reactive sites become saturated. Once saturation is achieved, additional exposure does not significantly increase growth, producing the characteristic ALD plateau.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TiN growth rate increases rapidly at short exposure times and then gradually levels off at longer exposures.\"}]}]","bbox":[{"panel_id":"b","x":0,"y":598,"width":652,"height":601},{"panel_id":"a","x":0,"y":1,"width":652,"height":587}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":656,"height":1203,"image_format":"jpeg","image_sha256":"b7b5907bb513dbb65b54d4b3302bff4d08bda9343f83135405c2c5ffa24f8625","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_6.jpg","caption":"Fig. 6. Arrhenius plot of TiN ALD mass deposition rates for long, medium and short reactant pulse sequences at deposition temperatures of $60 - 240^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_6","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents an Arrhenius plot of TiN ALD mass deposition rates for long, medium, and short reactant pulse sequences over a deposition temperature range of 60–240 °C. The x-axis is expressed as 1000/T, and distinct linear segments are annotated with apparent activation energies. The long pulse sequence shows the steepest slope at high temperature, while the short pulse sequence exhibits a weaker temperature dependence across the same range. These trends suggest that pulse duration strongly influences the temperature sensitivity of the ALD growth process.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulse sequence | 1000/T (K⁻¹) | Deposition Temperature (°C) | Mass deposition rate (ng/cm²/cycle) |\\n|---|---|---|---|\\n| Long (100-10-20-30) | ~1.95 | 240 | ~900 |\\n| Long (100-10-20-30) | ~2.05 | 210 | ~350 |\\n| Long (100-10-20-30) | ~2.20 | 180 | ~160 |\\n| Long (100-10-20-30) | ~2.40 | 150 | ~110 |\\n| Long (100-10-20-30) | ~2.60 | 120 | ~75 |\\n| Long (100-10-20-30) | ~2.80 | 90 | ~55 |\\n| Long (100-10-20-30) | ~3.00 | 60 | ~40 |\\n| Medium (20-10-6-10) | ~1.95 | 240 | ~300 |\\n| Medium (20-10-6-10) | ~2.05 | 210 | ~180 |\\n| Medium (20-10-6-10) | ~2.20 | 180 | ~120 |\\n| Medium (20-10-6-10) | ~2.40 | 150 | ~85 |\\n| Medium (20-10-6-10) | ~2.60 | 120 | ~60 |\\n| Medium (20-10-6-10) | ~2.80 | 90 | ~45 |\\n| Medium (20-10-6-10) | ~3.00 | 60 | ~30 |\\n| Short (1-0.5-1-5) | ~1.95 | 240 | ~70 |\\n| Short (1-0.5-1-5) | ~2.05 | 210 | ~55 |\\n| Short (1-0.5-1-5) | ~2.20 | 180 | ~45 |\\n| Short (1-0.5-1-5) | ~2.40 | 150 | ~35 |\\n| Short (1-0.5-1-5) | ~2.60 | 120 | ~28 |\\n| Short (1-0.5-1-5) | ~2.80 | 90 | ~22 |\\n| Short (1-0.5-1-5) | ~3.00 | 60 | ~16 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Labeling activation energies highlights the temperature sensitivity of each linear segment without requiring separate fitting plots. It visually emphasizes that different regimes exhibit different slopes, helping the reader identify transitions in growth behavior directly from the figure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Long pulses: highest apparent activation energy at high temperature.\\n-Medium pulses: intermediate activation energy.\\n-Short pulses: lowest apparent activation energy.\\n-Shorter pulses appear less temperature sensitive overall.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The long pulse sequence.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":5,"width":668,"height":655}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":670,"height":664,"image_format":"jpeg","image_sha256":"347c179c65e6b4cc65edd0e6f8a53ade6bac2cd682cc1a93ea4966c6d684d4bd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_7.jpg","caption":"Fig. 7. Mass deposited during one reactant cycle using the long pulse sequence at $120^{\\circ}\\mathrm{C}$ . The quantity $m_0$ is the mass change resulting from TDMAT exposure and purge. The quantity $m_0 + m_1$ is the net mass change resulting from one complete TiN ALD cycle.","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_7","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows in situ QCM mass changes during a single TiN ALD cycle at 120 °C using long reactant pulses. During TDMAT exposure and the first purge, the mass increases by m₀ due to precursor adsorption. Subsequent NH₃ exposure produces an additional mass change, and the final mass after the second purge corresponds to m₀+m₁, the net per-cycle gain. The stepwise features confirm that mass uptake occurs in discrete, self-limiting half-reactions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass Deposited (ng/cm²) | TiN Thickness (Å) | Stage |\\n|---|---|---|---|\\n| 0 | ~0 | ~0.0 | Start |\\n| 100 | ~95 | ~1.6 | End TDMAT exposure |\\n| 110 | ~90 | ~1.5 | End first purge (m₀) |\\n| 130 | ~165 | ~3.0 | End NH₃ exposure |\\n| 160 | ~75 | ~1.3 | End second purge (m₀ + m₁) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"m₀ represents the mass gained during the TDMAT exposure and subsequent purge. It reflects adsorption of TDMAT-derived species on the surface prior to nitridation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"During the NH₃ exposure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Separating these quantities isolates the contributions of precursor adsorption and nitridation/ligand removal. This helps identify which half-reaction controls mass uptake and confirms self-limiting behavior within the cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":653,"height":598}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":655,"height":603,"image_format":"jpeg","image_sha256":"8e28948e43eba96d95d2639b5e7a3bd21dada87252f21da6656b1c68454a7b51","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_52_figure_6.jpg","caption":"Figure 6. Number of atoms deposited per $\\mathrm{nm}^2$ per super-cycle and the Co/Li ratio in the film as a function of the Co/Li dosing ratio $(x)$ as determined by Nuclear reaction analysis (NRA) and Elastic backscattering spectroscopy (EBS). For the Co/Li dosing ratio the amount of Li cycles per super-cycle is kept constant at 1.","id":"train/atomic-layer-deposition/experimental-usecase/52/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/52/figure_6","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the number of atoms per nm² supercycle for Li NRA, Li RBS, and Co RBS measurements, along with the Co/Li atomic ratio, against the Co/Li dosing ratio\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Co/Li dosing ratio (x) | Li NRA (atoms/nm² supercycle) | Li RBS (atoms/nm² supercycle) | Co RBS (atoms/nm² supercycle) | Co/Li atomic ratio |\\n|---|---|---|---|---|\\n| 2 | 5.0 | 4.9 | 1.6 | 0.35 |\\n| 3 | 5.0 | 4.7 | 2.7 | 0.50 |\\n| 4 | 4.8 | 4.5 | 4.0 | 0.80 |\\n| 5 | 5.0 | 6.0 | 4.9 | 0.85 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The amount of Li cycles per super cycle is kept constant at 1\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Co amount per super cycle increases as x increases, and the paper notes it continues to increase roughly linearly with x. The Li amount per super cycle is much less sensitive to x, but the text notes a slight increase in the Li sub cycle deposition rate at higher Co to Li dosing ratios. Together these trends drive the Co to Li atomic ratio upward with x until it approaches a plateau.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The red squares and red line labeled Co to Li ratio correspond to the Co to Li atomic ratio, and they are read from the right y axis.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The paper states that knowing the overall film composition is essential to evaluate ALD deposited LiCoO2 thin films and to properly interpret the electrochemical results. Changing the Co to Li dosing ratio changes the atomic ratios in the film, so composition must be tracked rather than assumed from the process recipe. This figure provides that link between the ALD dosing ratio and the resulting film composition.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":670,"height":441}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/Donders et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":675,"height":448,"image_format":"jpeg","image_sha256":"62773e8f76a25b0d5ba81402dfcc1d6dae4a8b8e01afa7ff1d01a83bb0725692","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_54_figure_8.jpg","caption":"Figure 8. (Color online) Peak intensity and crystallite size (derived using Scherrer's equation) of the $\\mathrm{Cu(111)}$ peak in the XRD spectra for a $\\mathrm{Cu - }$ TaN-Si (Fig. 6) and b) $\\mathrm{Cu - }$ TiN-Si (Fig. 7) stacks annealed at different temperatures.","id":"train/atomic-layer-deposition/experimental-usecase/54/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/54/figure_8","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the intensity of Cu(111) and crystallite size at different anneal temperatures for a Cu-TaN-Si stack.\"},{\"panel_id\":\"b\",\"text\":\"The chart shows the intensity of Cu(111) and crystallite size at different anneal temperatures for a Cu-TiN-Si stack.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Anneal temperature (°C) | Intensity Cu(111) (counts/s) | Crystallite size (nm) |\\n|---|---|---|\\n| 200 | 100 | 30 |\\n| 400 | 135 | 30 |\\n| 600 | 145 | 30 |\\n| 650 | 100 | 30 |\\n| 700 | 70 | 30 |\"},{\"panel_id\":\"b\",\"text\":\"| Anneal temperature (°C) | Intensity Cu(111) (counts/s) | Crystallite size (nm) |\\n|---|---|---|\\n| 200 | 50 | 30 |\\n| 300 | 70 | 30 |\\n| 400 | 70 | 30 |\\n| 500 | 80 | 30 |\\n| 600 | 90 | 30 |\\n| 700 | 150 | 40 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200, 400, 600, 650 and 700 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 145 counts/s.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Initially, as the temperature increases, so too does the intensity of the Cu(111) peak. This can be related to the growth of the copper crystalline phase and also means that the resistance of the sheet decreases. Above 600 °C, the intensity of the Cu(111) peak rapidly decreases. At this point, copper diffuses through the film into the Si layer and Cu3Si is formed. This also causes a significant increase in film resistance.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200, 300, 400, 500, 600 and 700 °C.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":4,"width":672,"height":470},{"panel_id":"b","x":1,"y":490,"width":667,"height":445}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":675,"height":953,"image_format":"jpeg","image_sha256":"df39c239ee40c7b8487eb6cfda56611592692e1868ea43a2a7d9d17dbefa8b11","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_63_fig_5.jpg","caption":"FIG. 5. (Color online) Optical constants of as-deposited $(250^{\\circ}\\mathrm{C})$ and annealed $\\sim 26 \\mathrm{nm}$ thick $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ thin films.","id":"train/atomic-layer-deposition/experimental-usecase/63/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/63/fig_5","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the refractive index and extinction coefficient of a material as a function of wavelength, comparing 'as-deposited' and 'annealed' conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength, nm | Refractive index n (as-deposited) | Refractive index n (annealed) | Extinction coefficient k (as-deposited) | Extinction coefficient k (annealed) |\\n|---|---|---|---|---|\\n| 300 | 2.08 | 2.09 | 0.025 | 0.000 |\\n| 350 | 1.98 | 2.02 | 0.005 | 0.000 |\\n| 400 | 1.93 | 1.97 | 0.000 | 0.000 |\\n| 450 | 1.91 | 1.95 | 0.000 | 0.000 |\\n| 500 | 1.89 | 1.93 | 0.000 | 0.000 |\\n| 600 | 1.88 | 1.92 | 0.000 | 0.000 |\\n| 700 | 1.87 | 1.92 | 0.000 | 0.000 |\\n| 800 | 1.86 | 1.92 | 0.000 | 0.000 |\\n| 900 | 1.86 | 1.92 | 0.000 | 0.000 |\\n| 1000 | 1.85 | 1.92 | 0.000 | 0.000 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"n is plotted in black using the left y axis.\\n\\nk is plotted in blue using the right y axis.\\n\\nSolid lines indicate as deposited, dashed lines indicate annealed.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The annealed film has a higher refractive index than the as deposited film across the full 300 to 1000 nm range.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the as deposited film, k is highest at the shortest wavelengths near 300 nm and drops quickly toward near zero as wavelength increases. For the annealed film, k stays close to zero across the plotted range. Overall, absorption is concentrated near the short wavelength edge and is smaller after annealing.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After annealing, the refractive index increases relative to the as deposited film, which the authors attribute to structural enhancement after crystallization. A higher n is consistent with a denser and more ordered film compared with an amorphous state. In this dataset, annealing changes n without a large increase in k across most of the visible range, so the film can become optically denser while remaining largely transparent at longer wavelengths.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":5,"width":642,"height":423}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/Donmez et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"63","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":644,"height":431,"image_format":"jpeg","image_sha256":"67b8d98be77b97e91c7d96b9213eef2de77600cfee6132455bbe743269674892","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_69_FIG2_a.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/69/FIG2_a","sample_id":"atomic-layer-deposition/experimental-usecase/69/FIG2_a","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the relationship between the atomic ratio of P/(P + O + Al) and GPC (nm/cycle) as a function of TDMAP exposure time (in seconds).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| O - TAl - O | GPC (nm/cycle) | P/(P + O + Al) atomic ratio |\\n|---|---|---|\\n| 0 | 0.12 | 0.00 |\\n| 5 | 0.10 | |\\n| 10 | 0.10 | 0.14 |\\n| 15 | 0.12 | |\\n| 20 | | 0.15 |\\n| 30 | 0.13 | 0.15 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"15 s TDMAP; 10 s first O2 plasma; 15s TMA; 10 s second O2 plasma.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.15.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After about 10 seconds of TMA exposure, the GPC plateaus at a value of 0.12 nm/cycle.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After about 2 seconds of O2 plasma exposure, the GPC plateaus at a value of 12 nm/cycle.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":0,"width":755,"height":318}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG2_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG2_a.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/Ruben Blomme et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"69","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"not_found"},"width":761,"height":320,"image_format":"jpeg","image_sha256":"6187c65a593c1bae5aed559873e272998f132325207360ddda0c2ff37d7eaf17","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_69_FIG3_a.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/69/FIG3_a","sample_id":"atomic-layer-deposition/experimental-usecase/69/FIG3_a","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the relationship between average GPC (nanometers per cycle) and the P/(P+O+Al) atomic fraction as a function of temperature (°C).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Average GPC (nm/cycle) | P/(P+O+Al) atomic fraction |\\n|---|---|---|\\n| 125 | 0.20 | 0.17 |\\n| 150 | 0.18 | |\\n| 175 | 0.17 | 0.15 |\\n| 200 | 0.17 | |\\n| 225 | 0.13 | 0.14 |\\n| 250 | 0.13 | 0.15 |\\n| 275 | 0.11 | 0.14 |\\n| 300 | 0.12 | 0.13 |\\n| 325 | 0.10 | 0.15 |\\n| 350 | 0.07 | 0.13 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"25.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It stays relatively constant around a value of 0.15.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 3(a) demonstrates that increasing substrate temperature leads to a decrease in GPC and in the thickness contribution from each individual precursor pulse. The GPC decreases from approximately 0.20 nm per cycle at 125 °C to about 0.08 nm per cycle at 350 °C, whilst XPS analysis indicates that the phosphorus atomic fraction remains essentially independent of temperature. Figure 3(b) further shows that the average thickness addition per pulse for TDMAP, TMA, and the O₂* steps all decline with increasing temperature, consistent with the overall GPC trend. The marginal increase in GPC observed during extended TDMAP exposure at low temperature confirms that precursor condensation is not responsible for the higher growth rate at 125 °C. Overall, the figure indicates that reduced surface reactivity at elevated temperatures, likely due to desorption of reactive surface groups, governs the observed decrease in growth rate.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 0.2 nm.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":671,"height":442}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG3_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG3_a.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/Ruben Blomme et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"69","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"not_found"},"width":675,"height":447,"image_format":"jpeg","image_sha256":"186beff4cfbde0673e3e4afe2f3d9c27e28e62b801e7672e33fe042a29962f5a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_12.jpg","caption":"Figure 12. (A) Proton population in film and number of events for 20 cycles. Pulse and purge time have been both fixed at $0.1~\\mathrm{ms}$ and temperature is $500~\\mathrm{K}$ Proton population and number of events increase constantly due to the accumulation of protons in the subsurface layers. (B) (a) Start of metal pulse (cycle), (b) start of purge, (c) start of oxygen pulse, (d) start of purge, and (e) end of cycle. [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_12","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows two time-series: events/μs (red, left axis) and total protons in film/cell (green, right axis). Both signals oscillate in a repeating cycle pattern and generally increase with time, with higher event rates occurring alongside higher proton counts.\"},{\"panel_id\":\"b\",\"text\":\"The chart zooms into one cycle (0.0024–0.0028 s) and marks step transitions (metal pulse, purge, oxygen pulse, purge, end). The events/μs drops to a minimum after the metal pulse and then rises to a peak after the oxygen pulse.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Number of events/μs | Total protons in film/cell |\\n|---|---|---|\\n| 0.0000 | 275 | 27 |\\n| 0.0003 | 984 | 1239 |\\n| 0.0005 | 300 | 183 |\\n| 0.0007 | 1406 | 1842 |\\n| 0.0010 | 471 | 543 |\\n| 0.0011 | 1547 | 1799 |\\n| 0.0014 | 383 | 419 |\\n| 0.0015 | 1714 | 1979 |\\n| 0.0018 | 449 | 481 |\\n| 0.0019 | 1884 | 2122 |\\n| 0.0022 | 471 | 568 |\\n| 0.0023 | 2235 | 2234 |\\n| 0.0025 | 748 | 1047 |\\n| 0.0027 | 2441 | 2414 |\\n| 0.0029 | 772 | 947 |\\n| 0.0031 | 2403 | 2476 |\\n| 0.0033 | 863 | 1090 |\\n| 0.0035 | 2809 | 2954 |\\n| 0.0037 | 1057 | 1464 |\\n| 0.0039 | 2982 | 3111 |\\n| 0.0041 | 1107 | 1451 |\\n| 0.0043 | 3435 | 3681 |\\n| 0.0045 | 1595 | 2146 |\\n| 0.0047 | 3591 | 3644 |\\n| 0.0049 | 1736 | 2084 |\\n| 0.0051 | 3653 | 3483 |\\n| 0.0053 | 1827 | 2146 |\\n| 0.0055 | 3774 | 3799 |\\n| 0.0057 | 1930 | 2488 |\\n| 0.0059 | 3823 | 3893 |\\n| 0.0061 | 1975 | 2264 |\\n| 0.0063 | 4057 | 4315 |\\n| 0.0065 | 2406 | 2905 |\\n| 0.0068 | 4232 | 4533 |\\n| 0.0069 | 2554 | 3190 |\\n| 0.0071 | 4361 | 4496 |\\n| 0.0073 | 2709 | 3296 |\\n| 0.0075 | 4517 | 4719 |\\n| 0.0077 | 2850 | 3209 |\\n| 0.0079 | 4907 | 4968 |\"},{\"panel_id\":\"b\",\"text\":\"| Step | Time (s) | Number of events/μs |\\n|---|---|---|\\n| Start of metal pulse (cycle) | 0.0024 | 2018 |\\n| Start of purge | 0.0025 | 789 |\\n| Start of oxygen pulse | 0.0026 | 768 |\\n| Start of purge | 0.0027 | 2453 |\\n| End of cycle | 0.0028 | 2249 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"20 cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plot indicates net proton accumulation in the film over time. The proton trace shows a repeating up–down pattern each cycle, but its overall level shifts upward across the time window. That upward drift means any proton losses during parts of the cycle are smaller than the gains, so the net balance is positive.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The event rate is high at the start of the metal pulse (~2018 events/μs) and then drops sharply by the start of the first purge to ~789 events/μs. After the oxygen pulse, the event rate jumps to a peak (~2453 events/μs). By the end of the cycle it stays high but drops slightly (~2249 events/μs).\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":653,"height":459},{"panel_id":"b","x":152,"y":472,"width":362,"height":528}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":655,"height":1003,"image_format":"jpeg","image_sha256":"c0b1646d4591e2737a29189047d818cac19847ebeefe20b2cbd9bb29d031cb6a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_28_fig_3.jpg","caption":"Fig. 3. Temperature dependence of the film growth rate. Squares and circles are experimental thickness and mass increments per ALD cycle in $\\mathrm{ZrO_2}$ film growth [10]. Curves are the hydroxylation degree calculated by Eq. (6) for $E_{\\mathrm{ad}} = 25$ kcal/mol (dashed-dotted line), $E_{\\mathrm{ad}} = 35$ kcal/mol (dashed line) and $45\\mathrm{kcal / mol}$ (dashed-dotted line).","id":"train/atomic-layer-deposition/simulation-usecase/28/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/28/fig_3","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between temperature (T., °C) and mass/thickness increment per cycle (a.u.) and hydroxylation degree (a.u.). The mass/thickness increment decreases with increasing temperature, while the hydroxylation degree shows a profile starting at one, gradually decreasing to zero after a threshold.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| T., °C | Mass, thickness increment per cycle, a.u. | Hydroxylation degree, a.u. Left |Hydroxylation degree, a.u. Middle |Hydroxylation degree, a.u. Right |\\n|---|---|---|---|---|\\n| 100 | 1.00 | 1.00 | 1.00 | 1.00 |\\n| 200 | 0.79 | 0.17 | 1.00 | 1.00 |\\n| 300 | 0.67 | 0.00 | 1.00 | 1.00 |\\n| 400 | 0.60 | 0.00 | 0.17 | 1.00 |\\n| 500 | 0.57 | 0.00 | 0.00 | 0.83 |\\n| 600 | 0.54 | 0.00 | 0.00 | 0.17 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reason for this threshold is that there is a certain activation energy that has been set for the calculations. Only after this energy barrier has been met by the temperature, there will be a drop in hydroxynation level.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Less Cl is removed from the surface. Cl is heavier than oxygen so it is likely that the film will be slightly havier if there is, for the same thickness, more Cl.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.61\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As long as the increase in temperature only influences the process and not the sample itself it is likely to saturate the mass increment per cycle.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":590,"height":442}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/Maxim Deminsky et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":594,"height":444,"image_format":"jpeg","image_sha256":"c66b29bc7913760ea3f96bcf1897e8cba924ca9c106f041617b163490f4c48ca","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_7.jpg","caption":"Figure 7.Surface $-\\mathrm{OH}$ concentrations and roughness of the $\\mathrm{Al}_2\\mathrm{O}_3$ film at $300^{\\circ}\\mathrm{C}$ as a function of ALD cycles.","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_7","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents the evolution of surface –OH concentration and surface roughness of an Al2O3 film during ALD at 300 °C as a function of cycle number. The –OH concentration increases progressively with ALD cycles, with a pronounced acceleration at later stages. Surface roughness also increases with cycle number, but shows a slower rise and partial saturation compared to the –OH concentration. This indicates that chemical surface activation and morphological roughening evolve at different rates during film growth.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycles | –OH concentration (nm⁻²) | Roughness (Å) |\\n|---|---|---|\\n| 1 | 0.20 | 0.95 |\\n| 2 | 0.25 | 1.00 |\\n| 3 | 0.40 | 1.10 |\\n| 4 | 0.60 | 1.70 |\\n| 5 | 0.90 | 2.15 |\\n| 6 | 1.10 | 2.30 |\\n| 7 | 1.50 | 2.60 |\\n| 8 | 1.90 | 3.00 |\\n| 9 | 2.00 | 2.85 |\\n| 10 | 2.50 | 3.10 |\\n| 11 | 2.80 | 3.10 |\\n| 12 | 3.40 | 3.20 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately a factor of 17 (from ~0.2 to ~3.35 nm⁻²).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure suggests that ALD can achieve high surface reactivity without inducing excessive roughness if growth is stopped before roughness saturation. This allows optimization of cycle count to maximize –OH availability for subsequent reactions while maintaining acceptable surface smoothness. Such insight is valuable for applications requiring both reactive and morphologically controlled oxide films.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":634,"height":512}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":642,"height":517,"image_format":"jpeg","image_sha256":"516353b11abc4b8ac124dae5a4cf2db77dd196e454ef8662035d5ca626d435e6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_8.jpg","caption":"Figure 8. Growth per cycle in terms of mass (red) and average height (blue) as a function of ALD cycles during the $\\mathrm{Al}_2\\mathrm{O}_3$ ALD at $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_8","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents the growth per ALD cycle of an Al2O3 film at 300 °C expressed in terms of deposited mass and average height. Both quantities increase overall with ALD cycles, but exhibit noticeable fluctuations. The height-based growth shows stronger oscillations compared to mass-based growth, indicating differences between local thickness variation and overall material uptake during deposition.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycles | Growth per cycle (10⁻⁹ g/cm²)-Mass | Growth per cycle (Å)-Height |\\n|---|---|---|\\n| 1 | 1.2 | 0.07 |\\n| 2 | 1.0 | 0.05 |\\n| 3 | 1.9 | 0.10 |\\n| 4 | 2.0 | 0.12 |\\n| 5 | 2.4 | 0.14 |\\n| 6 | 3.0 | 0.20 |\\n| 7 | 4.0 | 0.18 |\\n| 8 | 5.2 | 0.30 |\\n| 9 | 6.0 | 0.33 |\\n| 10 | 7.0 | 0.38 |\\n| 11 | 6.0 | 0.35 |\\n| 12 | 7.4 | 0.40 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Height-based growth.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- Non-uniform surface coverage\\n- Local roughness evolution\\n- Island growth or restructuring\\n- Differences between average thickness and total material uptake\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Using both metrics provides complementary insight into ALD growth behavior. Mass-based growth reflects the total amount of material deposited per cycle, while height-based growth captures how that material translates into film thickness and roughness. Together, they help distinguish between uniform layer-by-layer growth and morphological effects such as roughening or density changes.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":632,"height":500}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":636,"height":500,"image_format":"jpeg","image_sha256":"939a359145aeba59801a368883a7a26de2e43fc1904579c77608922a0ae96fa7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_12.jpg","caption":"Figure 12. Si ALE using $\\mathrm{O}_2$ , $\\mathrm{HF}$ , and $\\mathrm{Al(CH_3)_3}$ as reactants at $290^{\\circ}\\mathrm{C}$ . Si etching occurs with an etch rate of $0.4 \\mathrm{\\AA}$ cycle, while the top $\\mathrm{SiO}_2$ layer remains constant at $\\sim 11 \\mathrm{\\AA}$ . Reproduced with permission from ref 37. Copyright 2018 American Chemical Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_12","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_12","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows a multi-axis chart with the change in silicon thickness and the SiO2 thickness over cycles of Si ALE at 290°C with O₂, 250 Torr, HF, 1 Torr, TMA, 1 Torr, and O₂-HF-TMA.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Si ALE cycles | Si Thickness Change (Å) | SiO2 Thickness (Å) |\\n| --- | --- | --- |\\n| 0 | 0 | 15 |\\n| 20 | -8 | 10 |\\n| 40 | -16 | 10 |\\n| 60 | -24 | 10 |\\n| 80 | -30 | 10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The experiment was perfomed at 290 °C, with O₂, 250 Torr, HF, 1 Torr, TMA, 1 Torr, and O₂-HF-TMA cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thickness of the Si decreases over the Si ALE cycles. The thickness of the SiO2 decreases but reaches a plateau at approximately 20 ALE cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 10 Å, after 20 ALE cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the figure, this ALE process reaches a etch per cycle of 0.4 Å/cycle.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":3,"width":657,"height":501}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":664,"height":506,"image_format":"jpeg","image_sha256":"3bda732fe981d5b8db9bd9185e0f53753f42b9d1ffc4323c376abb336e2748f7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_10.jpg","caption":"Figure 10. Time-resolved QMS results during the fourth TMA exposure in Figure 9. (a) Ion intensities for the $^{68}\\mathrm{Zn(CH_3)_2}$ conversion product at $m / z$ 83 and 98 appear rapidly in advance of the ion intensity for the TMA reactant at $m / z$ 72. (b) Intensity for the $\\mathrm{Al}_2(\\mathrm{CH}_3)_4\\mathrm{F}^+$ ion signal at $m / z$ 133 appears rapidly in advance of the ion intensity for the TMA reactant at $m / z$ 72.","id":"train/atomic-layer-etching/experimental-usecase/23/figure_10","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_10","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multi axis chart shows time-resolved QMS ion intensities during the TMA pulse. Volatile zinc byproducts, ⁶⁸Zn(CH₃)⁺ (m/z 83) and ⁶⁸Zn(CH₃)₂⁺ (m/z 98), appear immediately at the start of the pulse and decay rapidly, well before the TMA signal (m/z 72) saturates. This indicates a fast, self-limiting surface reaction that releases dimethylzinc.\"},{\"panel_id\":\"b\",\"text\":\"The multi axis bottom chart shows the aluminum-fluoride dimer fragment Al₂(CH₃)₄F⁺ (m/z 133) relative to the TMA signal (m/z 72). The product signal spikes instantly at the beginning of the TMA exposure, confirming rapid removal of surface fluorine through volatile dimethylaluminum fluoride formation, occurring concurrently with zinc removal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (min) | TMA Intensity (mV) | Product Intensity (mV) | Material |\\n|------------|---------------------|--------------------------|------------------------------|\\n| 38 | 0 | | TMA, m/z 72 |\\n| 38 | | 5.84 | ⁶⁸Zn(CH₃)⁺, m/z 83 |\\n| 38 | | 1.62 | ⁶⁸Zn(CH₃)₂⁺, m/z 98 |\\n| 39 | 52.87 | | TMA, m/z 72 |\\n| 39 | | 0.54 | ⁶⁸Zn(CH₃)⁺, m/z 83 |\\n| 39 | | 0.34 | ⁶⁸Zn(CH₃)₂⁺, m/z 98 |\\n| 39.5 | 54.16 | | TMA, m/z 72 |\\n| 39.5 | | 0.44 | ⁶⁸Zn(CH₃)⁺, m/z 83 |\\n| 39.5 | | 0.33 | ⁶⁸Zn(CH₃)₂⁺, m/z 98 |\\n| 40 | 55.09 | | TMA, m/z 72 |\\n| 40 | | 0.56 | ⁶⁸Zn(CH₃)⁺, m/z 83 |\\n| 40 | | 0.27 | ⁶⁸Zn(CH₃)₂⁺, m/z 98 |\\n| 40.5 | 55.65 | | TMA, m/z 72 |\\n| 40.5 | | 0.69 | ⁶⁸Zn(CH₃)⁺, m/z 83 |\\n| 40.5 | | 0.29 | ⁶⁸Zn(CH₃)₂⁺, m/z 98 |\\n| 41 | 0 | | TMA, m/z 72 |\\n| 41 | | 0.23 | ⁶⁸Zn(CH₃)⁺, m/z 83 |\\n| 41 | | 0.33 | ⁶⁸Zn(CH₃)₂⁺, m/z 98 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (min) | TMA Intensity (mV) | Product Intensity (mV) | Material |\\n|------------|---------------------|--------------------------|------------------------------|\\n| 38.5 | 0 | | TMA, m/z 72 |\\n| 38.5 | | 9.377 | Al₂(CH₃)₄F⁺, m/z 133 |\\n| 39 | 51.04 | | TMA, m/z 72 |\\n| 39 | | 8.77 | Al₂(CH₃)₄F⁺, m/z 133 |\\n| 39.5 | 52.01 | | TMA, m/z 72 |\\n| 39.5 | | 8.64 | Al₂(CH₃)₄F⁺, m/z 133 |\\n| 40 | 54.87 | | TMA, m/z 72 |\\n| 40 | | 9.12 | Al₂(CH₃)₄F⁺, m/z 133 |\\n| 40.5 | 54.3 | | TMA, m/z 72 |\\n| 40.5 | | 9.24 | Al₂(CH₃)₄F⁺, m/z 133 |\\n| 41 | 0 | | TMA, m/z 72 |\\n| 41 | | 0 | Al₂(CH₃)₄F⁺, m/z 133 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This allows you to minimize the TMA exposure time per cycle. Since the reaction completes instantly, the pulse time can be very short, significantly reducing the total cycle time and increasing etch throughput without losing etch per cycle.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Set the mass spectrometer to monitor specific m/z values (72, 83, 98). \\n2. Initiate a short, controlled pulse of TMA into the reactor. \\n3. Record ion intensities versus time. \\nThe timed valve creates a sharp TMA pulse to resolve the rapid surface reaction kinetics from the slower gas-phase filling.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface-limited reaction is better for efficiency, as all TMA is consumed at the surface with no waste. A potential downside is extreme sensitivity to surface defects, which could lead to non-uniform etching if the starting surface is inconsistent.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This indicates TMA is consumed instantly upon reaching the surface, confirming a highly reactive, fluorinated Zn-F surface* from the prior HF step. The surface reaction is faster than the gas-phase residence time, making product detection the first signature of the TMA pulse.\"}]}]","bbox":[{"panel_id":"b","x":22,"y":518,"width":645,"height":465},{"panel_id":"a","x":6,"y":37,"width":658,"height":464}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":669,"height":986,"image_format":"jpeg","image_sha256":"5da3c6a5da166d94cf956ab8504418e7ccda5b653c5392cda74b6e15525475b8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_32_figure_2.jpg","caption":"Figure 2. Relative atomic percentages among In, Ga, and As in InGaAs, and the atomic percentage of Cl on the InGaAs surface measured by XPS as a function of Cl adsorption time from 2.5 to $20\\mathrm{s}$ . The power to the ICP ion source was $200\\mathrm{W}$ at $\\mathrm{Cl}_2$ $1.0\\mathrm{mTorr}$ of process chamber pressure. The grid voltages to the ICP ion gun were maintained at $-10\\mathrm{V}$ for the first grid and $-20\\mathrm{V}$ for the second grid.","id":"train/atomic-layer-etching/experimental-usecase/32/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/32/figure_2","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multi-axis chart showing the atomic percentages of In, Ga, and As (left axis) and Cl (right axis) as a function of Cl adsorption time measured by XPS. The substrate element percentages remain approximately constant across the time range, while the Cl signal increases at short times and saturates at about 16% after ~10 s, as indicated by the annotation in the figure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | In (%) | Ga (%) | As (%) | Cl (%) |\\n|---|---|---|---|---|\\n| Pristine (0) | ~45 | ~36 | ~15 | ~1 |\\n| 2.5 | ~48 | ~38 | ~14 | ~13 |\\n| 5.0 | ~49 | ~36 | ~14 | ~20 |\\n| 10.0 | ~49 | ~38 | ~13 | ~26 |\\n| 20.0 | ~48 | ~38 | ~15 | ~26 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 16%.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, they remain relatively stable across the measured time range.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Chlorine (Cl) atomic percentage increases rapidly during the initial adsorption period and then plateaus at approximately 16%, indicating a saturation behavior. In contrast, the atomic percentages of In, Ga, and As remain relatively constant throughout the adsorption time range. This suggests that Cl adsorption is self-limiting under these conditions and does not significantly perturb the near-surface elemental composition of the InGaAs substrate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.0 mTorr.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":4,"width":653,"height":457}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/Atomic layer etching of InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":655,"height":461,"image_format":"jpeg","image_sha256":"ec2a399861ca1451ecaa64275283926f3dead4015e42a08d73fd14a4b4fd7bf9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_32_figure_5.jpg","caption":"Figure 5. Etch depth (Å) and etch rate $(\\mathrm{\\AA} / \\mathrm{cycle})$ of InGaAs, Si, $\\mathrm{SiO}_2$ , $\\mathrm{HfO}_2$ , PR, and ACL measured as a function of $\\mathrm{Ar^{+}}$ ion desorption time (s/cycle) with the optimized ALE condition in figures 3 and 4.","id":"train/atomic-layer-etching/experimental-usecase/32/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/32/figure_5","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multi-axis chart showing etch depth (left axis) and etch rate (right axis) as a function of Ar⁺ ion exposure time for multiple materials under optimized ALE conditions. InGaAs exhibits a clear increase in etch depth that saturates near ~110 Å, while Si, SiO₂, HfO₂, PR, and ACL show no measurable etching across the entire time range.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s/cycle) | InGaAs Etch Depth (Å) | InGaAs Etch Rate (Å/Cycle) | Etch Depth of Si, SiO₂, HfO₂, PR, ACL (Å) | Etch Rate of Si, SiO₂, HfO₂, PR, ACL (Å/Cycle) |\\n|---|---|---|---|---|\\n| 0 | 0 | 0.0 | 0 | 0 |\\n| 20 | ~45 | ~0.4 | 0 | 0 |\\n| 30 | ~60 | ~0.6 | 0 | 0 |\\n| 50 | ~110 | ~1.1 | 0 | 0 |\\n| 80 | ~115 | ~1.2 | 0 | 0 |\\n| 100 | ~110 | ~1.1 | 0 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. InGaAs\\n, 2. Si\\n, 3. SiO2\\n, 4. HfO2\\n, 5. PR (Photoresist)\\n, 6. ACL (Amorphous Carbon Layer)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure demonstrates extremely high selectivity for InGaAs. While the InGaAs sample (black squares) shows a significant etch depth that increases to saturation around 110 Å, all other tested materials (Si, SiO2, HfO2, PR, and ACL) exhibit zero etch depth. This indicates that the developed ALE process is highly specific to InGaAs and does not damage or remove common mask or substrate materials.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 50 seconds/cycle.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":1,"width":649,"height":440}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/Atomic layer etching of InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":653,"height":444,"image_format":"jpeg","image_sha256":"965e6fddb0022eb82ebbe0a3b65d0f8de71e8855f0066e243349c4384beacdf8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_32_figure_6.jpg","caption":"Figure 6. Etch depth $(\\mathring{\\mathrm{A}})$ and etch rate (A/cycle) of InGaAs measured as a function of the number of ALE cycles.","id":"train/atomic-layer-etching/experimental-usecase/32/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/32/figure_6","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multi-axis chart showing InGaAs etch depth (left axis, black squares) and etch rate per cycle (right axis, red circles) as a function of the number of ALE cycles. Etch depth increases approximately linearly from 100 to 400 cycles, while the etch rate remains nearly constant at ~1.1 Å/cycle across the range.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| No. of ALE Cycles | Etch Depth (Å) [Left Axis] | Etch Rate (Å/Cycle) [Right Axis] |\\n|---|---|---|\\n| 100 | ~105 | ~1.10 |\\n| 200 | ~220 | ~1.10 |\\n| 300 | ~335 | ~1.13 |\\n| 400 | ~460 | ~1.15 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 1.1 Å/Cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch depth exhibits a perfectly linear increase as the number of cycles increases from 100 to 400. The black squares fall along a straight line, rising from approximately 100 Å to roughly 460 Å. This linearity, combined with the constant etch rate, indicates that the etching process is highly stable and allows for precise control of the etch depth at the angstrom level.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No. of ALE Cycles.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":3,"width":665,"height":446}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/Atomic layer etching of InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":669,"height":450,"image_format":"jpeg","image_sha256":"b0d1b89df148cef029667379e1942de01f583ff63652cfb3e76e082cc00f5c6c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_32_figure_7.jpg","caption":"Figure 7. Surface roughness and surface composition after the 100 cycles of ALE, investigated using AFM and XPS, respectively. As references, the surface roughness and surface composition of as-received un-etched InGaAs and the InGaAs etched by conventional RIE were included. For the InGaAs RIE, InGaAs was etched for 1 min using an ICP etcher operated at $13.56\\mathrm{MHz}200\\mathrm{W}$ $-50\\mathrm{V}$ of bias voltage, and $\\mathrm{Cl}_2$ gas pressure of $50\\mathrm{mTorr}$","id":"train/atomic-layer-etching/experimental-usecase/32/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/32/figure_7","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multi-axis chart comparing surface composition (atomic %) and RMS roughness for Reference (Ref.), ALE, and RIE treated InGaAs. The RIE sample shows a measurable chlorine signal (7.8%) and the highest roughness on the right axis, while both Ref. and ALE show no detectable chlorine and lower roughness levels. The composition of In, Ga, and As remains broadly comparable between Ref. and ALE, indicating limited surface modification under ALE conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Metric | Ref. | ALE | RIE |\\n|---------------|------|------|-------|\\n| In (Atomic %) | 29.4 | 29.5 | 38.0 |\\n| Ga (Atomic %) | 20.6 | 21.8 | 18.4 |\\n| As (Atomic %) | 6.6 | 5.3 | 2.4 |\\n| Cl (Atomic %) | ~0 | ~0 | 7.8 |\\n| C (Atomic %) | 43.4 | 43.4 | ~33.4 |\\n| Rq (nm) | ~60 | ~68 | ~78 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Chlorine (Cl).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the roughness values are very similar (4.6 nm for ALE vs. 4.3 nm for Reference).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE sample exhibits lower roughness and no detectable chlorine signal compared with the RIE sample. In contrast, the RIE condition shows a clear chlorine residue (7.8%) and the highest roughness level on the right axis. This indicates that ALE produces a smoother and chemically cleaner surface than RIE under the conditions shown.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Reactive Ion Etching (RIE).\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":670,"height":420}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/Atomic layer etching of InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":672,"height":425,"image_format":"jpeg","image_sha256":"f312a63bb472ffd0042d7ac3987ec0d9b1cfcf8dcb2f93200ab1f33fb9814758","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_33_fig_5.jpg","caption":"FIG. 5. IR annealing time dependence of the EPC of TiN films with error bars representing the standard deviation $\\sigma$ . Temperature (solid line), shown on the right axis, was measured using a thermocouple attached to the carrier wafer during processing.","id":"train/atomic-layer-etching/experimental-usecase/33/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/33/fig_5","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between IR annealing time and EPC (nanometers per cycle) along with the corresponding temperature in degrees Celsius.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| IR Annealing Time (s) | EPC (nm/cycle) | Temperature (degrees celcius)|\\n|---|---|---|\\n| 0 | 0 |-10|\\n| 1 | 0.1 |-10|\\n| 2 | 0.2 |-10|\\n| 3 | 0.3 |-10|\\n| 4 | 0.3 |0|\\n| 5 | 0.5 |0|\\n| 6 | 0.4 |10|\\n| 7 | 1.1 |15|\\n| 8 | 1.3 |20|\\n| 9 | 1.2 |25|\\n| 10 | 1.0 |30|\\n| 15 | 2.6 |60|\\n| 20 | 2.8 |100|\\n| 25 | 2.6 |140|\\n| 30 | 2.7 |170|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The EPC seems to show self-limiting behaviour, however there is also increase in table temperature. This means that the actual influence can not be seen easily.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both the annealing duration and the temperature at which the experiment takes place have been changed. Usually in experiment designs the goal is to change only one parameter at a time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2.7 nm/cycle\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For industrial applications the shortest exposures with still good controllablity should be chosen, this would be 15 s.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":671,"height":530}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/Atomic layer etching of titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":677,"height":537,"image_format":"jpeg","image_sha256":"ef9029fce514a240f5534d7277a9324f226bf79b21a6ca01d69047cf14c48281","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_34_fig_8.jpg","caption":"FIG. 8. Roughness and thickness change of $60 \\text{nm} \\text{Al}_2\\text{O}_3$ after 5 min of $50 \\text{W}$ dry etching at 0.06 Torr, 50-cycle pALE at $400^{\\circ}\\text{C}$ , and 100-cycle pALE at $400^{\\circ}\\text{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/34/fig_8","sample_id":"atomic-layer-etching/experimental-usecase/34/fig_8","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares thickness and RMS roughness of Al₂O₃ across four processing steps—initial deposition, dry etching, and two pALE cycle conditions. Thickness continuously decreases from ~60 nm to ~10 nm, while roughness first increases after dry etching and then decreases again with pALE, as confirmed by both plotted values and AFM images.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Process Condition|Thickness (nm)|RMS Roughness (nm)|\\n|------------------|--------------|------------------|\\n|as-deposited|55–60|0.8–1.0|\\n|50 W – 5 min|~40|1.3–1.4|\\n|50 cycles pALE|~25|~1.0|\\n|100 cycles pALE|~10–12|0.7–0.8|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The results show that while dry etching quickly reduces thickness, it also damages the surface by increasing roughness. In contrast, pALE offers both thinning and smoothing, restoring the surface to near-original roughness levels. This indicates that pALE is better suited for applications requiring precise surface control, smoother interfaces, and minimal plasma damage. The combined data allow researchers to balance thinning rate with surface quality for optimal device fabrication.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Dry etching leaves the film around ~40 nm thick with high roughness (~1.3–1.4 nm), while 50 and 100 pALE cycles further thin the film to ~25 nm and ~10–12 nm and reduce roughness to ~1.0 and ~0.7–0.8 nm.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Self-limiting etch reactions improve smoothness, Surface becomes more uniform with controlled etching, Damage from aggressive dry etching is gradually repaired, Lower RMS roughness reflects higher surface quality\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":866,"height":617}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/CF4 plasma-based atomic layer etching of Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":866,"height":617,"image_format":"jpeg","image_sha256":"2411de5bd8ec2bd8266e094994406e77899a006bc968c239022b913704ffc8d7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_5.jpg","caption":"Figure 5. Peak intensity of high resolution XPS scans of (a) Ti 2p $(459.1~\\mathrm{eV})$ and Si 2p $(99.3\\mathrm{eV})$ and (b) W 4f and $(38\\mathrm{eV})$ and F 1s $(685.2\\mathrm{eV})$ for $5.5\\mathrm{nm}$ $\\mathrm{TiO_2}$ films exposed to 0, 10, 25, 50, and $100\\mathrm{WF}_6$ doses at $220^{\\circ}\\mathrm{C}$ . Lines are a guide for the eye. The decrease in the Ti 2p signal confirms film etching.","id":"train/atomic-layer-etching/experimental-usecase/46/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_5","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS Ti 2p and Si 2p spectra show a linear decrease in the Ti signal and a corresponding increase in the Si substrate signal with increasing WF₆ exposure, confirming progressive thinning and etching of the 5.5 nm TiO₂ film at 220 °C.\"},{\"panel_id\":\"b\",\"text\":\"XPS W 4f and F 1s spectra increase rapidly and then saturate with WF₆ dosing, indicating the formation of a stable tungsten–fluoride–rich surface layer and associated chemical modification during the process.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| WF₆ Doses | Intensity (a.u.) | Material |\\n|----------|------------------|----------|\\n| 0 | 28600 | Ti 2p Intensity |\\n| 0 | 1600 | Si 2p Intensity |\\n| 10 | 26200 | Ti 2p Intensity |\\n| 10 | 1667 | Si 2p Intensity |\\n| 25 | 25300 | Ti 2p Intensity |\\n| 25 | 1800 | Si 2p Intensity |\\n| 50 | 22500 | Ti 2p Intensity |\\n| 50 | 2490 | Si 2p Intensity |\\n| 75 | 21100 | Ti 2p Intensity |\\n| 75 | 3000 | Si 2p Intensity |\\n| 100 | 19300 | Ti 2p Intensity |\\n| 100 | 3645 | Si 2p Intensity |\"},{\"panel_id\":\"b\",\"text\":\"| WF₆ Doses | Intensity (a.u.) | Material |\\n|----------|------------------|----------|\\n| 0 | 2000 | W 4f Intensity |\\n| 0 | 5500 | F 1s Intensity |\\n| 10 | 4300 | W 4f Intensity |\\n| 10 | 6550 | F 1s Intensity |\\n| 25 | 4300 | W 4f Intensity |\\n| 25 | 6600 | F 1s Intensity |\\n| 50 | 4500 | W 4f Intensity |\\n| 50 | 7000 | F 1s Intensity |\\n| 75 | 4334 | W 4f Intensity |\\n| 75 | 7100 | F 1s Intensity |\\n| 100 | 4000 | W 4f Intensity |\\n| 100 | 7200 | F 1s Intensity |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 100 doses, the sample is in a near-breakthrough state. The Si 2p signal (substrate) has more than doubled in intensity compared to 0 doses, indicating the TiO₂ overburden is significantly thinner, allowing photoelectrons from the underlying silicon wafer to escape and be detected.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The WF₆ chemical method is preferable for leaving a passivated surface, as it forms a stable W-F termination. The trade-off is that it leaves a foreign material residue (W) on the surface. Physical sputtering would avoid residue but would create a damaged, reactive surface with dangling bonds requiring subsequent passivation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The composition changes from pure TiO₂ to a mixed tungsten oxyfluoride layer. The inverse trends represent a fluorination and exchange reaction: WF₆ fluorinates the TiO₂ network, forming volatile TiFₓ species that etch away (decreasing Ti), while non-volatile tungsten fluoride (WFₓ) products remain on the surface (increasing W and F).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The consistent, dose-dependent changes show the reaction is predictable and controllable. By calibrating the number of WF₆ doses to the decrease in Ti signal (thickness), engineers can reliably etch TiO₂ to a target thickness with minimal variation, which is essential for device performance.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":516,"height":371},{"panel_id":"b","x":526,"y":0,"width":520,"height":371}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":1047,"height":372,"image_format":"jpeg","image_sha256":"8a44c5d879912d6d9fcf87fdb299abf719c01d55dd3e59c6ddff36640d8bb7af","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_13_fig_3.jpg","caption":"FIG. 3. A typical plot of Ar kinetic energy (filled circles) and Ar projected position along the vertical axis (empty circles) as a function of time. The dashed horizontal line indicates the position at which an atom moving away from the lattice is removed from the simulation cell.","id":"train/atomic-layer-etching/simulation-usecase/13/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/13/fig_3","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the kinetic energy of Ar atoms (in eV) and their y-position (in Angstroms) over time (in ps). The kinetic energy decreases rapidly at the beginning and then plateaus. The y-position also decreases rapidly initially, but then increases linearly after 0.2 ps.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (ps) | Ar Kinetic Energy (eV) | y-position (Angstrom) |\\n|---|---|---|\\n| 0.0 | 50.0 | 5.0 |\\n| 0.1 | 50.0 | -3.0 |\\n| 0.2 | 0.2 | -3.0 |\\n| 0.3 | 1.0 | -2.0 |\\n| 0.4 | 2.0 | 0.0 |\\n| 0.5 | 2.0 | 1.25 |\\n| 0.6 | 2.0 | 5.0 |\\n| 0.7 | 2.0 | 8.75 |\\n| 0.8 | 2.0 | 12.5 |\\n| 0.9 | 2.0 | 16.25 |\\n| 1.0 | 2.0 | 20.0 |\\n| 1.1 | 2.0 | |\\n| 1.2 | 2.0 | |\\n| 1.3 | 2.0 | |\\n| 1.4 | 2.0 | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.0 to 1.4 ps.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"20.0 Å.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 2.0 eV.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 3 shows how a 50 eV Ar⁺ ion interacts with the surface over the first few tenths of a picosecond, highlighting both the ion’s kinetic energy and its y-coordinate as functions of time. When the ion is introduced at \\nt = t50​ at y = 8.5 Å, it rapidly penetrates the lattice and collides with atoms in the top layers. These collisions cause a fast drop in kinetic energy. As its energy continues to decrease, the Ar ion reaches its maximum penetration depth at y = -2 Å around 0.17 ps with a minimum kinetic energy below 0.2 eV. Subsequent collisions eventually impart energy back to the ion, reversing its motion and causing it to travel upward through the lattice. The figure shows the ion exiting the material at around 0.4 ps with a kinetic energy of roughly 2 eV. Once the ion crosses the y = 4.5 Å threshold, its kinetic energy becomes constant, indicating that it has left the “influence region” of the lattice and is no longer interacting with surface atoms.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":5,"width":668,"height":432}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/Molecular dynamics simulation of atomic layer etching of silicon.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":670,"height":439,"image_format":"jpeg","image_sha256":"a6e2e46004b022a71166766e8e224c8dcd37231bd11842d09981ffbae09276e1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_13_fig_4.jpg","caption":"FIG. 4. The hot-spot temperature (triangles) and the number of atoms in the hot spot (circles) as a function of time. The figure shows an average over 300 simulation runs.","id":"train/atomic-layer-etching/simulation-usecase/13/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/13/fig_4","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the average hot spot temperature and the average number of atoms in the hot spot over time.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (ps) | Average hot spot temperature (K) | Average number of atoms in the hot spot |\\n|---|---|---|\\n| 0.0 | 300 | 0 |\\n| 0.2 | 1000 | 70 |\\n| 0.4 | 800 | 80 |\\n| 0.6 | 700 | 60 |\\n| 0.8 | 600 | 50 |\\n| 1.0 | 500 | 40 |\\n| 1.2 | 400 | 25 |\\n| 1.4 | 400 | 20 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 400 K.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 30.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 4 shows how a localized hot spot develops immediately after the energetic Ar ion collides with the surface and transfers energy into the lattice. The average crystal temperature rises sharply and reaches a maximum of about 1070 K around the moment when most of the ion’s kinetic energy has been dissipated, roughly 0.15 ps after impact. When focusing only on the atoms directly affected by the collision, the hot spot reaches an even higher peak temperature of more than 3000 K at around 0.10 ps. At this very early stage, only a small group of atoms carry most of the deposited energy. As these atoms transfer energy into their surroundings, the hot spot spreads, which increases the number of atoms involved but lowers the average temperature of this region. This spreading continues until about 0.35 ps, when the hot spot reaches its maximum size of about 75 atoms. Thereafter both the local temperature and the number of affected atoms decrease as energy continues to dissipate through the lattice and into the surrounding temperature-controlled region. The authors emphasize that the hot-spot temperature is only a qualitative measure because temperature is not rigorously defined when only a small number of atoms are involved.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":6,"width":664,"height":421}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/Molecular dynamics simulation of atomic layer etching of silicon.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":669,"height":427,"image_format":"jpeg","image_sha256":"5371dee74b91cea750c6e6aa30be93e73d12a5103f1fad0e03600a41a89a78e2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_17_fig1.jpg","caption":"Fig.1. t time of G0 and G3 for both steps, respectively. (For interpretation of the references to color in this figure legend, the reader is referred to the web version of this article.)","id":"train/atomic-layer-etching/simulation-usecase/17/fig1","sample_id":"atomic-layer-etching/simulation-usecase/17/fig1","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the consumption of HF at different feed flow rates, along with the half-cycle time for G0 and G3 processes for Step A.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the consumption of TMA at different feed flow rates, along with the half-cycle time for G0 and G3 processes for Step B.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF Feed Flow Rate (sccm) | G0: HF Consumed (×10⁵ std cm³/year) | G3: HF Consumed (×10⁵ std cm³/year) | G0: Half-Cycle Time (s) | G3: Half-Cycle Time (s) |\\n|---------------------------|--------------------------------------|--------------------------------------|---------------------------|---------------------------|\\n| 50 | 0.5 | 0.5 | 1.6 | 1.6 |\\n| 150 | 1.2 | 1.2 | 1.4 | 1.4 |\\n| 300 | 2.5 | 2.5 | 1.4 | 1.4 |\\n| 600 | 4.8 | 4.2 | 1.3 | 1.2 |\\n| 600 | 5.8 | 5.3 | 1.1 | 1.0 |\"},{\"panel_id\":\"b\",\"text\":\"| TMA Feed Flow Rate (sccm) | G0: TMA Consumed (×10⁵ std cm³/year) | G3: TMA Consumed (×10⁵ std cm³/year) | G0: Half-Cycle Time (s) | G3: Half-Cycle Time (s) |\\n|----------------------------|---------------------------------------|---------------------------------------|---------------------------|---------------------------|\\n| 70 | 1.0 | 1.0 | 2.5 | 2.5 | \\n| 150 | 2.2 | 2.2 | 2.5 | 2.5 |\\n| 300 | 4.2 | 4.2 | 2.4 | 2.4 |\\n| 600 | 7.8 | 7.0 | 2.1 | 1.8 |\\n| 900 | 10 |9.8 | 1.8 | 1.8 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For both reactors, the HF cycle time and TMA cycle time remain constant until 500 sccm and change respectively when\\n1. HF flow rate is 600 and 900 sccm\\n2. TMA flow rate is 600 and 900 sccm.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The annual feed consumption is calculated by assuming that 96 cycles of etching are conducted daily and that the half-cycle times for each feed flow rate remain constant with each cycle in a single wafer system. The estimates for the precursor consumption are calculated for a single wafer.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The results for Step A a indicate that the half-cycle time for Step A for G3 is consistently faster compared to that of G0. Thus, the amount of precursor needed to ensure complete coverage is less than that of G0. By utilizing G3, at least 1.3 ×10 3 std cm 3 and at most 5.5 ×10 4 std cm 3 of HF can be saved for the range of the simulated flow rates with 600 sccm flow rate achieving the greatest amount of precursor that could be saved\"}]}]","bbox":[{"panel_id":"a","x":0,"y":9,"width":613,"height":433},{"panel_id":"b","x":644,"y":11,"width":632,"height":431}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/Multiscale computational fluid dynamics modeling of thermal atomic layer etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":1286,"height":445,"image_format":"jpeg","image_sha256":"9508d408c4b0a5b92669c875e17333bb5e949c066b703791ffca664c98a95b41","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_17_fig_10.jpg","caption":"Fig. 10. Complete cycle of G3 displaying the pressure of HF and TMA and coverage of $\\mathrm{AlF_3}$ for all HF and TMA feed flow rate of $150~\\mathrm{scm / h}$ and $70~\\mathrm{scm / h}$ , respectively. The blue solid line and the orange dashed line indicate the pressure of HF and TMA over time, respectively. The yellow solid line shows the coverage of $\\mathrm{AlF_3}$ . The $\\mathrm{AlF_3}$ is formed in Step A and etched in Step B. (For interpretation of the references to color in this figure legend, the reader is referred to the web version of this article.)","id":"train/atomic-layer-etching/simulation-usecase/17/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/17/fig_10","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the pressure and coverage of AIF3 over time, with two separate axes for each metric for reactor model G3.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | HF Pressure (Pa) | TMA Pressure (Pa) | Coverage of AlF₃ (%) |\\n|----------|-------------------|--------------------|------------------------|\\n| 0 | 0 | 0 | 0 |\\n| 0.5 | 30 | 0 | 40 |\\n| 1.0 | 65 | 0 | 80 |\\n| 1.5 | 68 | 0 | 95 |\\n| 2.0 | 65 | 0 | 100 |\\n| 3.0 | 0 | 0 | 100 |\\n| 6.0 | 0 | 0 | 100 |\\n| 7.0 | 0 | 30 | 100 |\\n| 8.0 | 0 | 60 | 100 |\\n| 9.0 | 0 | 65 | 100 |\\n| 10.0 | 0 | 60 | 100 |\\n| 11.0 | 0 | 0 | 100 |\\n| 15.0 | 0 | 0 | 100 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The HF and TMA feed flow rate of 150 sccm and 70 sccm, respectively.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The inclined plate reactor (G3) shows the best performance in terms of the film uniformity and etching speed.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It means a complete etching cycle consisting of \\n1. HF dose of 2 s\\n2. N 2 purge of 5 s\\n3. A TMA dose of 3 s\\n4. N 2 purge of 5 s\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"HF Pressure starts increasing at 0 s, peaks around 65–70 Pa between 1–2 s, then drops sharply to near zero by 3 s, indicating that the HF pulse occurs early in the cycle (roughly 0–2.5 s). TMA Pressure (Red dashed line), remains at zero until about 7 s, then rises sharply to about 60–65 Pa between 8–10 s, and falls back to zero by 11 s. This shows the TMA pulse happens later in the cycle (roughly 7–10.5 s). Coverage of AlF₃ (Yellow dotted line): Starts at 0%, rises rapidly during the HF pulse, reaching 100% coverage by ~2 s, and stays constant for the rest of the cycle. This means the surface becomes fully covered with AlF₃ after the HF exposure and does not change during the TMA pulse. Thus the process is sequential as it represents complete cycle with TMA following HF.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":5,"width":664,"height":326}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/Multiscale computational fluid dynamics modeling of thermal atomic layer etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":670,"height":333,"image_format":"jpeg","image_sha256":"2d501670d73fb8ab08d958236c895294c75fabf8289dfff2eb8c3c35a30e5d77","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_26_fig_4.jpg","caption":"FIG. 4. Changes in the etched depth (black) and surface concentration of Cl atoms (blue) as functions of the $\\mathsf{Ar}^+$ ion dose in the desorption step. Here, the etched depth is defined as the position of the top surface measured from its position at the end of the previous desorption step. The ALE conditions for (a)–(d) are the same as those for (a)–(d) of Fig. 3, respectively. The results shown here are the averages of those over C3–C6 cycles.","id":"train/atomic-layer-etching/simulation-usecase/26/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/26/fig_4","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"multi-axis chart"},{"panel_id":"d","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the depth change and concentration of Cl atoms on Si as a function of ion dose for 20 eV Ar+ ions for thin Cl layer adsorption.\"},{\"panel_id\":\"b\",\"text\":\"The chart shows the depth change and concentration of Cl atoms on Si as a function of ion dose for 50 eV Ar+ ions for thin Cl layer adsorption.\"},{\"panel_id\":\"c\",\"text\":\"The chart shows the depth change and concentration of Cl atoms on Si as a function of ion dose for 20 eV Ar+ ions for thick Cl layer adsorption.\"},{\"panel_id\":\"d\",\"text\":\"The chart shows the depth change and concentration of Cl atoms on Si as a function of ion dose for 50 eV Ar+ ions for thick Cl layer adsorption.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion Dose (x1016 ions/cm2) | Depth Change (Å) | Cl Atoms on Si (1015/cm2) |\\n|---|---|---|\\n| 0.0 | 0.0 | 1.5 |\\n| 5.0 | 0.5 | 1.0 |\\n| 10.0 | 1.0 | 0.8 |\\n| 15.0 | 1.5 | 0.75 |\"},{\"panel_id\":\"b\",\"text\":\"| Ion Dose (x1016 ions/cm2) | Depth Change (Å) | Cl Atoms on Si (1015/cm2) |\\n|---|---|---|\\n| 0.0 | 0.0 | 6.2 |\\n| 5.0 | 2.2 | 2.2 |\\n| 10.0 | 4.4 | 1.2 |\\n| 15.0 | 6.6 | 0.4 |\"},{\"panel_id\":\"c\",\"text\":\"| Ion Dose (x1016 ions/cm2) | Depth Change (Å) | Cl Atoms on Si (1015/cm2) |\\n|---|---|---|\\n| 0.0 | 0.0 | 4.2 |\\n| 5.0 | 1.5 | 1.2 |\\n| 10.0 | 3.0 | 1 |\\n| 15.0 | 4.5 | 0.4 |\"},{\"panel_id\":\"d\",\"text\":\"| Ion Dose (x1016 ions/cm2) | Depth Change (Å) | Cl Atoms on Si (1015/cm2) |\\n|---|---|---|\\n| 0.0 | 0.0 | 12.5 |\\n| 5.0 | 2.5 | 1 |\\n| 10.0 | 5.0 | 0.6 |\\n| 15.0 | 7.5 | 0.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Here, the etched depth is defined as the position of the top surface measured from its position at the end of the previous desorption step.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At low Ar+ ion incident energy, it is seen that, with the increasing Ar+ ion dose, the etched depth in (a) increased slowly with a weakly decreasing slope, whereas the etched depth in (c) increased rapidly with a clear sign of saturation, i.e., the self-limit. The surface concentrations of Cl atoms also\\ndecreased slowly and nearly one-half of the initial Cl atoms remained on the surface at the end of the ALE cycle in (a), whereas the surface concentrations of Cl atoms in (c) decreased sharply with the Ar+ ion dose. It should be noted, however, that, even in the case of (c), a small amount of Cl, with a surface concentration similar to that in (a), still remained on the Si surface at the end of\\nthe ALE cycle.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At high Ar+ ion incident energy, it is seen in (b) that, with a small amount of Cl deposited in the adsorption step, the etched depth monotonically increased all throughout the Ar+ ion injection,\\nindicating that physical sputtering dominates the etching process. In (d), where a larger amount of Cl was deposited in the adsorption step, the etched depth increased drastically until about\\n5 * 10^16/cm2 and then increased monotonically in the same way as in (b). In both cases, the density of Cl atoms at the end of the ALE cycle is almost negligible.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":8,"y":49,"width":652,"height":508},{"panel_id":"b","x":687,"y":53,"width":654,"height":503},{"panel_id":"c","x":9,"y":583,"width":654,"height":512},{"panel_id":"d","x":687,"y":583,"width":655,"height":512}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/Surface damage formation during atomic layer etching of silicon with chlorine adsorption.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":1350,"height":1095,"image_format":"jpeg","image_sha256":"5b5d209be74bf51302baabf3c02eec128c59ee453025b5fa27f0f872a8bd57f3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_27_fig_11.jpg","caption":"FIG. 11. Al2p XPS peak area and peak binding energy after 30 ALE cycles as a function of table temperature. The binding energies of $\\mathrm{AlF}_3$ and $\\mathrm{Al}_2\\mathrm{O}_3$ have been included as dashed lines to show the transition between the two binding environments. The insets show the fitted Al2p XPS spectra for the films etched at 100 and $200^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/simulation-usecase/27/fig_11","sample_id":"atomic-layer-etching/simulation-usecase/27/fig_11","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"spectra chart"},{"panel_id":"c","label":"spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS analysis showing Al2p peak area (black) and binding energy (blue) as a function of process temperature after 30 ALE cycles. The Al2p signal is high at low temperatures (~100°C) with binding energy near AlF3 (76.5 eV), indicating AlF3 deposition dominates. Above 200°C, the peak area decreases and stabilizes while binding energy shifts toward Al2O3 (74.5 eV), indicating successful ALE with minimal Al contamination.\"},{\"panel_id\":\"b\",\"text\":\"Fitted Al2p XPS spectrum at 100°C showing a large peak consistent with AlF3 formation.\"},{\"panel_id\":\"c\",\"text\":\"Fitted Al2p XPS spectrum at 200°C showing a smaller peak shifted toward Al2O3 binding energy.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Al2p Peak Area (x10³ CPS eV) | Peak Binding Energy (eV) |\\n|---|---|---|\\n| 100 | 17.8 | 76.25 |\\n| 125 | 16.2 | 76.45 |\\n| 150 | 14.5 | 76.35 |\\n| 175 | 5.2 | 75.80 |\\n| 200 | 1.2 | 74.85 |\\n| 225 | 0.9 | 74.50 |\\n| 250 | 0.8 | 74.85 |\\n| 275 | 0.9 | 74.65 |\\n| 300 | 1.0 | 74.75 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Intensity 100°C (x10³ CPS) | Intensity 200°C (x10³ CPS) |\\n|---|---|---|\\n| 80.0 | 0.1 | 0.0 |\\n| 78.0 | 1.5 | 0.0 |\\n| 77.0 | 5.5 | 0.1 |\\n| 76.2 | 7.3 | 0.2 |\\n| 75.5 | 5.0 | 0.4 |\\n| 74.8 | 1.2 | 0.8 |\\n| 74.0 | 0.2 | 0.3 |\\n| 72.0 | 0.0 | 0.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At low temperatures (100°C), significant Al contamination occurs due to dominant AlF3 ALD reactions, resulting in a large Al2p peak area. Between 125 and 175°C, the Al content decreases as the AlF3 ALD reaction is suppressed while the ALE ligand-exchange reaction becomes more effective. Above 200°C, the Al2p signal stabilizes at a minimal level (<1 at.%), indicating that Al atoms deposited during the TMA step are efficiently removed.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At low temperatures, AlF3 deposition from the SF6 plasma/TMA chemistry dominates, resulting in Al-F bonding. At higher temperatures, the AlF3 ALD reaction is suppressed and any residual Al on the surface comes from unreacted TMA in the final half-cycle. When samples are transferred through ambient air to the XPS, this residual TMA oxidizes, producing Al2O3-like binding environments rather than AlF3.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200°C.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"76.5 eV corresponds to Al-F bonds (AlF3), while 74.5 eV corresponds to Al-O bonds (Al2O3).\"}]}]","bbox":[{"panel_id":"a","x":1,"y":0,"width":670,"height":519},{"panel_id":"b","x":245,"y":121,"width":165,"height":161},{"panel_id":"c","x":407,"y":120,"width":166,"height":164}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":675,"height":523,"image_format":"jpeg","image_sha256":"63218294d8562bd5b4928ee54197b794d5e5ad6a6b60642f93d478db8a50da59","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_2.jpg","caption":"FIG. 2. (Color online) Etch front characteristics during ideal ALE etching. (a) Etch depth and surface roughness as a function of time for the second through fifth ALE pulses. The different subcycles $\\mathrm{Cl} =$ passivation, $\\mathrm{Ar}^+$ $=$ ion bombardment) are shown at the top for reference, with passivation phases being highlighted by gray bands in the figure. Four pulse periods are shown in total. (b) Surface coverage of Si, $\\mathrm{SiCl}$ $\\mathrm{SiCl}_2$ $\\mathrm{SiCl}_3$ and average chlorine per site at the etch front as a function of time for the second pulse.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_2","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the etch depth and roughness over time during a process involving alternating cycles of Ar+ and Cl treatments.\"},{\"panel_id\":\"b\",\"text\":\"The chart illustrates the surface coverage of Si, SiCl, SiCl2, and SiCl3 along with the average chlorine site over time during a process involving Cl and Ar+ treatments.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Etch Depth (ML) | Roughness |\\n|----------|-----------------|-----------|\\n| 3.0 | 0 | 0.00 |\\n| 6.5 | -1.5 | 1.00 |\\n| 10.0 | -3.0 | 1.00 |\\n| 13.5 | -4.5 | 1.00 |\\n| 17.0 | -5.0 | 0.00 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Si Coverage | | SiCl3 | SiCl2 | SiCl |\\n|----------|-------------|------|-------|-------|------|\\n| 3.0 | 1.00 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 3.3 | 0.00 | 2.80 | 0.80 | 0.50 | 0.20 |\\n| 4.8 | 0.90 | 0.50 | 0.10 | 0.05 | 0.00 |\\n| 6.8 | 1.00 | 2.90 | 0.90 | 0.60 | 0.30 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface coverages of SiClx plotted as a function of time for one ALE cycle indicate that there is a short (50 ms) transient period at the beginning\\nof the Cl passivation step where SiClx x<3 species dominate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After the initial transient the surface quickly establishes a steady state coverage of \\n1. 1% SiCl\\n2. 21% SiCl2\\n3. 78% SiCl3\\nmaking an average chlorination per surface site, , of 2.77.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch depth as a function of time for the AR2 feature shows exactly one ML of material being removed in each ALE cycle from the second cycle after starting the etch, to the fifth cycle. The roughness increases at the beginning of each ion bombardment step as the passivated layer is partially and statistically eroded.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes after etching\"}]}]","bbox":[{"panel_id":"a","x":11,"y":8,"width":561,"height":448},{"panel_id":"b","x":0,"y":501,"width":572,"height":427}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":572,"height":928,"image_format":"jpeg","image_sha256":"2edddb76f1104fe8853353a63d29261d61d1b3f7ee86eb918cafb4d2536d76a7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_3.jpg","caption":"FIG. 3. (Color online) Surface coverage of Si and average chlorine per site at the etch front for ideal ALE as a function of time for the second ALE pulse for $\\mathrm{AR} = 2$ and 10 trenches.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_3","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the Si surface coverage and average chlorine per site over time, with two curves labeled 'Ar = 2' and 'Ar = 10' as a function of time.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Si Coverage (Ar=2) | Si Coverage (Ar=10) | Cl Coverage (Ar=2) | Cl Coverage (Ar=10) |\\n|----------|---------------------|----------------------|---------------------|----------------------|\\n| 2.8 | 1.00 | 1.00 | 0.00 | 0.00 |\\n| 3.0 | 0.00 | 0.00 | 2.80 | 2.50 |\\n| 3.2 | 0.00 | 0.00 | 2.90 | 2.70 |\\n| 3.4 | 0.10 | 0.05 | 2.80 | 2.60 |\\n| 3.6 | 0.50 | 0.40 | 2.00 | 1.80 |\\n| 3.8 | 0.90 | 0.80 | 1.00 | 0.80 |\\n| 4.0 | 1.00 | 0.95 | 0.20 | 0.10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The only significant difference between the ideal ALE of features having AR 2 and AR 10 is the time required to achieve the steady state value of \"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A longer time is required to fully passivate the AR 10 feature compared to AR 2. As the AR increases, the neutral conductance through the feature decreases, and a larger portion of the incoming neutral flux is reflected back into the plasma by collisions with the sidewalls before the flux can passivate the etch front\\nat the bottom of the feature. The lower conductance of the AR 10 feature requires a larger fluence of Cl radicals, and therefore a longer passivation time, to achieve the same as the AR 2 feature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"From the image, it can be observed thattThe Cl coverage for AR 2 is always higher than AR 10\"}]}]","bbox":[{"panel_id":"a","x":4,"y":5,"width":572,"height":432}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":578,"height":439,"image_format":"jpeg","image_sha256":"8ec8c1817093ee2f9a398eaa9ed66a79719c911811d92da25c5cd6247b9d9b75","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_31_figure_5.jpg","caption":"Figure 5. Removal step energies by terminations on the $\\mathrm{Ni / N}$ , $\\mathrm{Cu / N}$ , $\\mathrm{Ni / O}$ , and $\\mathrm{Cu / O}$ systems as functions of coverage, evaluated at $80^{\\circ}\\mathrm{C}$ . Two axes are shown. The x-axis on the left corresponds to the formamidine chemistry. The y-axis on the right corresponds to the formic acid chemistry. The bulk model results on the pristine and activated substrates are, respectively, marked with colored and black horizontal lines for comparison. The values are in eV per-metal atom etched.","id":"train/atomic-layer-etching/simulation-usecase/31/figure_5","sample_id":"atomic-layer-etching/simulation-usecase/31/figure_5","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"multi-axis chart"},{"panel_id":"d","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multi-axis chart showing the Gibbs free energy of removal (ΔG_rm at 80 °C) as a function of nitrogen coverage for the Ni/N system. Dual y-axes compare formamidine and formic acid chemistries across multiple crystallographic facets, with bulk reference energies indicated for context.\"},{\"panel_id\":\"b\",\"text\":\"Multi-axis chart showing removal energies versus nitrogen coverage for the Cu/N system. The data compare facet-dependent trends and reveal generally less favorable removal energetics than the corresponding Ni/N system.\"},{\"panel_id\":\"c\",\"text\":\"Multi-axis chart showing removal energies versus oxygen coverage for the Ni/O system. Several surface reconstructions are explicitly labeled, including (100) p(2×2) and (110) missing-row structures, enabling comparison of reconstruction-dependent stability.\"},{\"panel_id\":\"d\",\"text\":\"Multi-axis chart showing removal energies versus oxygen coverage for the Cu/O system. The figure highlights reconstruction-dependent trends, including (110) (2×1)-PR, and compares surface removal energetics against bulk reference states.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Coverage θ_N (Å⁻²) | Blue Solid | Green Dash | Red Dash-Dot | Blue Dash | Purple Dash Dot | Yellow Solid |Teal Dash |\\n|---|---|---|---|---|---|---|---|\\n| 0.01 | ~ 0.80 | ~ 0.40 | ~ 0.3 | ~ 0.5 | ~ 0.6 | ~ 0.5 | ~ 0.4 |\\n| 0.05 | ~ 0.75 | ~ 0.45 | ~ 0.3 | ~ 0.4 | ~ 0.5 | ~ 0.4 | ~ 0.4 |\\n| 0.10 | ~ 0.30 | ~ 0.25 | ~ -0.2| ~ 0.2 | ~ 0.4 | ~ 0.2 | ~ 0.1 |\\n| 0.15 | - | ~ -0.25| ~ -0.6| - | ~ -0.1| ~ -0.3 | ~ -0.3 |\"},{\"panel_id\":\"b\",\"text\":\"| Coverage θ_N (Å⁻²) | Blue Solid | Green Dash | Red Dash-Dot | Blue Dash | Purple Dash Dot | Yellow Solid |Teal Dash |\\n|---|---|---|---|---|---|---|---|\\n| 0.01 | ~ 0.0 | ~ -0.20 | ~ -0.25 | ~ -0.15 | ~ -0.15 | ~ -0.10 | ~ -0.10 |\\n| 0.05 | ~ 0.5 | ~ -0.15 | ~ -0.20 | ~ -0.20 | ~ -0.05 | ~ -0.10 | ~ -0.10 |\\n| 0.10 | ~ -0.2 | ~ -0.30 | ~ 0.40 | - | - | ~ -0.25 | ~ -0.20 | \\n| 0.15 | ~ -0.5 | - | - | - | - | - | - |\"},{\"panel_id\":\"c\",\"text\":\"| Coverage θ_N (Å⁻²) | Blue Solid | Green Dash | Red Dash-Dot | Blue Dash | Purple Dash Dot | Yellow Solid |Teal Dash |\\n|---|---|---|---|---|---|---|---|\\n| 0.01 | ~ 0.95 | ~ 0.40 | ~ 0.60 | ~ 0.60 | ~ 0.75 | ~ 0.75 | ~ 0.75 |\\n| 0.05 | ~ 0.80 | ~ 0.40 | ~ 0.50 | ~ 0.50 | ~ 0.75 | ~ 0.70 | ~ -0.10 |\\n| 0.10 | ~ 0.25 | ~ 0.20 | ~ 0.00 | ~ 0.25 | ~ 0.25 | ~ 0.20 | ~ -0.20 | \\n| 0.15 | ~ -0.10 | ~ -0.10| ~ -0.50| ~ 0.00 | ~ -0.10| ~ -0.10 | ~ -0.10 |\"},{\"panel_id\":\"d\",\"text\":\"| Coverage θ_N (Å⁻²) | Blue Solid | Green Dash | Red Dash-Dot | Blue Dash | Purple Dash Dot | Yellow Solid |Teal Dash |\\n|---|---|---|---|---|---|---|---|\\n| 0.01 | ~ 0.30 | ~ 0.00 | ~ 0.10 | ~ 0.10 | ~ 0.15 | ~ 0.15 | ~ 0.35 |\\n| 0.05 | ~ 0.20 | ~ 0.10 | ~ 0.00 | ~ 0.10 | ~ 0.20 | ~ 0.05 | ~ 0.15 |\\n| 0.10 | ~ 0.00 | ~ 0.00 | ~ -0.25| ~ -0.05| ~ 0.00 | ~ -0.05 | ~ 0.00 | \\n| 0.15 | ~ -0.40 | ~ -0.25| ~ -0.80| ~ -0.20| ~ -0.20| ~ -0.35 | ~ -0.20 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It reflects how the removal energy changes with nitrogen coverage, indicating the sensitivity of surface stability to adsorbate density.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the energy generally increases (becomes more positive and less favorable) as coverage increases.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Subfigure (c) labels p(2×2) and c(2×2) reconstructions on the (100) surface and (2×1)-MR and (3×1)-MR missing-row reconstructions on the (110) surface. At low oxygen coverage, the (110) (2×1)-MR reconstruction shows the lowest ΔG_rm values, indicating the most favorable removal energetics among the labeled structures.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It suggests that both chemistries follow comparable surface reaction energetics. Either pathway could drive controlled removal if conditions are tuned for the appropriate surface state, giving flexibility in precursor choice for ALE design.\"}]}]","bbox":[{"panel_id":"a","x":9,"y":0,"width":485,"height":365},{"panel_id":"b","x":577,"y":0,"width":484,"height":367},{"panel_id":"c","x":11,"y":414,"width":480,"height":362},{"panel_id":"d","x":578,"y":415,"width":486,"height":359}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/Thermodynamics of Atomic Layer Etching Chemistry on Copper and Nickel Surfaces from First Principles.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":1091,"height":861,"image_format":"jpeg","image_sha256":"e9b1108735d904f7a68b3e3d58430af46b4b8cce645f3411dd96308d9a9175fd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_31_figure_6.jpg","caption":"Figure 6. Wulff construction-averaged removal step energies as functions of coverage (dashed lines) for (a) nickel and (b) copper systems. The solid lines correspond to the results from the bulk model for the pristine (black) and modified (colored) systems. The values are in eV per-metal atom etched.","id":"train/atomic-layer-etching/simulation-usecase/31/figure_6","sample_id":"atomic-layer-etching/simulation-usecase/31/figure_6","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multi-axis line chart showing Wulff-averaged Gibbs free energies of removal (ΔG_rm at 80 °C) for nickel as a function of surface coverage. The left y-axis corresponds to formamidine (HFamd) chemistry and the right y-axis to formic acid (HFA). Horizontal lines indicate bulk reference energies for pristine Ni and modified Ni₃N.\"},{\"panel_id\":\"b\",\"text\":\"Multi-axis line chart showing Wulff-averaged removal energies for copper as a function of coverage. Dual y-axes distinguish formamidine and formic acid chemistries, with bulk reference lines for Cu and Cu₃N included for comparison.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Coverage θ (Å⁻²) | Del_G (HFAmd) (Ni/N)| Del_G (HFA) (Ni/N) | Del_G (HFAmd) (Ni/O)| Del_G (HFA) (Ni/O) |\\n|---|---|---|---|---|\\n| 0.01 | ~ 0.60 | ~ 0.85 | ~ 0.75 | ~ 0.95 |\\n| 0.05 | ~ 0.50 | ~ 0.75 | ~ 0.60 | ~ 0.85 |\\n| 0.10 | ~ 0.35 | ~ 0.60 | ~ 0.20 | ~ 0.50 |\\n| 0.15 | ~ -0.20| ~ 0.00 | ~ -0.10| ~ 0.20 |\\n| 0.20 | - | - | ~ -0.40| ~ -0.20 |\"},{\"panel_id\":\"b\",\"text\":\"| Coverage θ (Å⁻²) | Del_G (HFAmd) (Cu/N)| Del_G (HFA) (Cu/N) | Del_G (HFAmd) (Cu/O)| Del_G (HFA) (Cu/O) |\\n|---|---|---|---|---|\\n| 0.01 | ~ 0.20 | ~ 0.20 | ~ 0.30 | ~ 0.30 |\\n| 0.05 | ~ 0.00 | ~ 0.05 | ~ 0.20 | ~ 0.20 |\\n| 0.10 | ~ -0.20| ~ 0.15 | ~ 0.00 | ~ 0.00 |\\n| 0.15 | - | - | ~ -0.20| ~ -0.10|\\n| 0.20 | - | - | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Formamidine (HFamd) — left y-axis, -Formic acid (HFA) — right y-axis\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Bulk reference lines provide a baseline to evaluate if surface removal is energetically accessible. Comparing these helps determine if etching remains surface-limited rather than bulk-like, which is essential for achieving atomic-layer control. It's also useful for identifying when modified surface layers become easier to remove than the pristine bulk material.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The trend suggests that once sufficient surface coverage is achieved, removal becomes thermodynamically favorable without requiring continued activation. This behavior supports self-limiting etching, where removal naturally saturates after one atomic layer is processed.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":17,"width":667,"height":433},{"panel_id":"b","x":3,"y":473,"width":664,"height":426}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/Thermodynamics of Atomic Layer Etching Chemistry on Copper and Nickel Surfaces from First Principles.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:image_caption"},"width":670,"height":900,"image_format":"jpeg","image_sha256":"8bfd0231d7ff76934762f62cdbde0ba2cec378c2b943bcd98a255b4a3fb799db","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_6.jpg","caption":"FIG. 6. Amount of Si etched (in units of $\\mathrm{A}$ ) (blue lines) and Cl uptake (red lines) as a function of cycle number for $\\mathrm{Si - Cl_2 - Ar}$ ALE simulation using $100\\mathrm{eV}$ $\\mathrm{Ar^+}$ . One cycle consists of $28.2\\mathrm{ML}$ of $\\mathrm{Cl}_2$ molecule impacts and $28.2\\mathrm{ML}$ of $\\mathrm{Ar^+}$ impacts. The surface is nearly saturated with Cl before ion bombardment starts each cycle. Ion bombardment reduces the Cl content of the layer (shown as an equivalent surface coverage of $\\mathrm{Cl / cm^2}$ ).","id":"train/atomic-layer-etching/simulation-usecase/6/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_6","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This multi-axis chart tracks the progression of Si etching and Cl uptake across five repeated cycles under 100 eV Ar⁺ ion bombardment. The red curve (left y-axis) indicates the amount of Si etched per cycle, which increases sharply during each ion bombardment step and then returns to baseline, showing a reproducible, step-like etching profile. Meanwhile, the blue line (right y-axis) demonstrates a continuous, linear increase in chlorine uptake with each cycle, indicating cumulative surface adsorption. Together, these trends reveal a consistent etch–adsorb dynamic where physical sputtering removes Si while chemical Cl incorporation steadily rises, likely due to residual Cl interactions at the surface\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle Number | Si Etched (Å) | Cl Uptake (Cl/cm² × 10¹⁵) |\\n|--------------|----------------|----------------------------|\\n| 0 | 0 | 0.10 |\\n| 1 | 32 | 0.22 |\\n| 2 | 32 | 0.34 |\\n| 3 | 32 | 0.46 |\\n| 4 | 32 | 0.58 |\\n| 5 | 32 | 0.70 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Si etching profile exhibits a periodic, stepwise increase and reset pattern with each cycle, reflecting ion-driven material removal during plasma exposure. In contrast, the chlorine uptake increases steadily without any resetting, indicating cumulative surface incorporation. This divergence highlights the physical versus chemical nature of each process: sputtering is transient and self-limiting per cycle, whereas adsorption builds progressively with repeated Cl exposure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cl uptake (Cl/cm² × 10¹⁵)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Cl₂ exposure, Pump and purge, Ar⁺ bombardment, Pump and purge\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":428}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":675,"height":428,"image_format":"jpeg","image_sha256":"b9ff54633a63f0101dcad3d42c903b3704c574e242610dec7e33238ca40e69d1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_7.jpg","caption":"FIG. 7. Amount of Si etched in units of $\\dot{A}$ (blue lines) and Cl uptake (red lines) during the final cycle for the $\\mathrm{Si - Cl_2 - Ar}$ ALE simulation using $100\\mathrm{eVAr^{+}}$ The final portion of the ion bombardment step (purple dashed-dotted line) is used to calculate the etch yield shown as the purple dashed-dotted line. The purple dashed-dotted line is extrapolated to the estimated experimental $\\mathsf{Ar}^+$ fluence.","id":"train/atomic-layer-etching/simulation-usecase/6/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_7","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This multi-axis chart illustrates the relationship between species dosage (Cl₂ or Ar⁺/cm²) and two parameters: Si etching depth and chlorine uptake. The red curve (left y-axis) represents silicon etching at 100 eV Ar⁺, which begins only after Cl₂ exposure has saturated the surface. Etching increases steadily with Ar⁺ dosage and plateaus at ~9.8 Å, indicating the removal of one atomic layer of Si. The blue curve (right y-axis) shows Cl uptake, which rises quickly during Cl₂ exposure and saturates around 1.35 × 10¹⁵ Cl/cm². The dashed lines and arrows illustrate the sequential process: first Cl uptake during Cl₂ exposure, followed by Si etching upon Ar⁺ bombardment, revealing a synergistic etch mechanism.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Species Dosage (Cl₂ or Ar⁺/cm²) × 10¹⁵ | Si Etched (Å) | Cl Uptake (Cl/cm²) × 10¹⁵ |\\n|----------------------------------------|---------------|----------------------------|\\n| 0 | 0 | 0 |\\n| 10 | 0 | 0.75 |\\n| 20 | 0 | 1.25 |\\n| 25 | 0 | 1.35 |\\n| 30 | 1.5 | 1.35 |\\n| 50 | 4 | 1.35 |\\n| 75 | 6.5 | 1.35 |\\n| 100 | 9.0 | 1.35 |\\n| 125 | 9.8 | 1.35 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Chlorine uptake increases rapidly during initial Cl₂ exposure and saturates near 1.35 × 10¹⁵ Cl/cm², showing a self-limiting surface reaction. In contrast, silicon etching does not begin during Cl₂ exposure but increases progressively during the Ar⁺ dosage phase. This distinction highlights that Cl₂ alone does not etch Si, but pre-functionalises the surface, enabling etching when energy is provided by Ar⁺ bombardment. The etching depth reaches a maximum around 9.8 Å, corresponding to the removal of a single Si layer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.35 × 10¹⁵ Cl/cm².\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Cl adsorption, Surface saturation, Ar⁺ bombardment, Si–Cl bond breaking, Silicon etching\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":425}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":669,"height":425,"image_format":"jpeg","image_sha256":"622fa2e49e26029251a18f19be61e72c00740aa2a49bbc5484896e13bdc66f42","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_8_fig_11.jpg","caption":"FIG. 11. Al2p XPS peak area and peak binding energy after 30 ALE cycles as a function of table temperature. The binding energies of $\\mathrm{AlF}_3$ and $\\mathrm{Al}_2\\mathrm{O}_3$ have been included as dashed lines to show the transition between the two binding environments. The insets show the fitted Al2p XPS spectra for the films etched at 100 and $200^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/simulation-usecase/8/fig_11","sample_id":"atomic-layer-etching/simulation-usecase/8/fig_11","subset":"multi-axis-chart","split":"train","classification":[{"panel_id":"a","label":"multi-axis chart"},{"panel_id":"b","label":"spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between the table temperature and the Al2p peak area and peak binding energy of AlF3 and Al2O3.\"},{\"panel_id\":\"b\",\"text\":\"The inset spectra chart displays the intensity of Al2p peaks at different binding energies.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Table temperature°C | Al2p peak area (CPS eV) | Peak binding energy (eV) |\\n|---|---|---|\\n| 100 | 17000 | 76.0 |\\n| 125 | 17000 | 76.0 |\\n| 150 | 15000 | 76.0 |\\n| 175 | 5000 | 75.7|\\n| 200 | 2000 | 74.7 |\\n| 225 | 2000 | 74.5 |\\n| 250 | 2000 | 74.7 |\\n| 275 | 2000 | 74.5 |\\n| 300 | 2000 | 74.6 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding energy (eV) | Intensity (CPS) |\\n|---|---|\\n| 72 | 0 |\\n| 74 | 0 |\\n| 76 | Peak |\\n| 78 | 0 |\\n| 80 | 0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems that upon etching there is a shift in binding energy.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All data points are from films after 30 cycles of etching. There is way less al2p peak intensity for 200 degrees celcius indicating a higher EPC.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A reason could be that fluorine species get more volatile at higher temperatures, meaning they will leave the surface, resulting in more Al2O3.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Temperatures above 200 degrees celcius show almost no fluorine.\"}]}]","bbox":[{"panel_id":"b","x":246,"y":123,"width":162,"height":160},{"panel_id":"a","x":0,"y":2,"width":669,"height":515}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/Isotropic atomic layer etching of GaN using SF6 plasma and AI(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":675,"height":523,"image_format":"jpeg","image_sha256":"63218294d8562bd5b4928ee54197b794d5e5ad6a6b60642f93d478db8a50da59","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/multi-axis-chart/validation/metadata.jsonl b/subsets/multi-axis-chart/validation/metadata.jsonl index 4721786779faac878177a8a1bb3e94ed616a45e3..f6b3a58cf13b636c0c3d777e83b284958b832232 100644 --- a/subsets/multi-axis-chart/validation/metadata.jsonl +++ b/subsets/multi-axis-chart/validation/metadata.jsonl @@ -1,5 +1,5 @@ -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_5.jpg","caption":"Figure 5. Mass change versus time for $\\mathrm{Al}_2\\mathrm{O}_3$ ALE using sequential TMA and HF exposures at 250, 275, 300, and $325^{\\circ}C$","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_5","subset":"multi-axis-chart","split":"validation","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":667,"height":486,"image_format":"jpeg","image_sha256":"9722bbee3fbccb297a7aa63c36e9af6538233ba23be1ad874fca144304ed8921","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":667,"height":486}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows mass loss from Al2O3 during repeated TMA/HF cycles at four temperatures. All traces decrease roughly linearly with time, but the slope becomes steeper at higher temperatures, indicating faster etching. The 250 °C curve shows the smallest mass loss while the 325 °C trace shows the largest, consistent with thermally enhanced reaction rates. The right-hand axis converts the mass loss to an equivalent thickness removed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Time (s) | Mass change (ng/cm²) |\\n|------------------|----------|-----------------------|\\n| 250 | 0 | ~0 |\\n| 250 | 4000 | ~-500 |\\n| 250 | 8000 | ~-900 |\\n| 275 | 0 | ~0 |\\n| 275 | 4000 | ~-800 |\\n| 275 | 8000 | ~-1600 |\\n| 300 | 0 | ~0 |\\n| 300 | 4000 | ~-1100 |\\n| 300 | 8000 | ~-2200 |\\n| 325 | 0 | ~0 |\\n| 325 | 4000 | ~-1500 |\\n| 325 | 8000 | ~-3000 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2.0 s of TMA exposure, 30.0 s of N2 purge, 1.0 s of HF exposure, and 30.0 s of N2 purge.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mass change per cycle increases with higher temperature values.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"325 °C\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The information shown in the figure makes it possible to determine that the temperature of the ALE cycle affects the rates of the process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process with the highest etch rate is the one at 325 degree Celcius.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This would take 6000 seconds.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Industrial players usually aim for the highest throughput. This would be achieved with the process at 325 degrees Celcius.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The process at 250 degrees Celcius.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At each temperature, the mass decreases approximately linearly with time. The lines do not show curvature or abrupt changes over the plotted interval. This indicates a steady accumulation of mass loss during the process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 250 °C and 275 °C curves remain closest together.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mass change on the left y-axis directly represents cumulative material removal.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thickness axis provides an alternative way to interpret the same trend in length units. It allows readers to estimate film removal depth directly from the plot. This is useful for process planning without additional conversion.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Etch rate increases approximately 5-fold from 0.14 Å/cycle at 250°C to 0.75 Å/cycle at 325°C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The dual axes allow direct comparison of the raw QCM measurement (mass change in ng/cm²) with the more practically relevant thickness change (in Å). The thickness conversion uses the known Al₂O₃ density of 3.1 g/cm³, enabling readers to immediately understand the etch depth without manual calculation. This is particularly useful for process development where target etch depths are typically specified in thickness units.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Linear behavior confirms that the etch rate remains constant throughout 100 cycles at each temperature, indicating stable, reproducible etching.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 75 Å (based on 0.75 Å/cycle × 100 cycles), as shown on the right y-axis.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"TMA dose (2 s) → 2. Purge (30 s) → 3. HF dose (1 s) → 4. Purge (30 s).\\nThe notation defines the precise timing: reactant dose length and purge length. This controls reactant exposure and byproduct removal, ensuring self-limiting surface reactions and preventing gas-phase mixing.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"325°C is ruled out. Using 300°C (the highest allowed) maximizes the etch rate within the constraint, reducing process time. The trade-off is operating near the budget limit, which may increase thermal stress compared to 250°C, but offers significantly faster throughput.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing temperature increases the slope (etch rate). This follows the Arrhenius law, where higher thermal energy accelerates the surface reaction kinetics of both the fluorination (HF) and ligand-exchange (TMA) steps, leading to more material removed per unit time.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If CVD-like growth occurred (e.g., TMA and HF mixing in the gas phase), the net mass change would likely turn positive (mass gain) or the etch rate would slow down drastically, causing the curves to flatten or curve upward. The fact that the lines remain strictly negative and linear confirms that the process is operating in a pure etching mode with no competing deposition artifacts.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"These MCPCs correspond to etch rates hence a mass loss is a direct indicator of thickness decreasing and vice versa.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Etch rates are\\n1. 0.14 Å/cycle at 250 °C \\n2. 0.75 Å/cycle at 325 °C\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The determination of these etch rates is based on the Al2O3 ALD film density of 3.1 g/cm3, the MCPC, the number of ALE cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"100\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The MCPC increases with temperature from -4.2 ng/(cm^2 cycle) at 250 °C to -23.3 ng/(cm2 cycle) at 325 °C. This corresponds to etch rates of 0.14 Å/cycle at 250 °C to 0.75 Å/cycle at 325 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For this study, a quartz crystal microbalance (QCM) was used, which yields mass change in ng/cm^2. Before the experiments, the density of the Al2O3 substrate was determined to be 3.1 g/cm^3. Dividing mass change (per area) by the density in this case results in the material thickness that was etched per cycle, expressed in Å.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 s TMA exposure, 30 s purge, 1 s HF exposure, 30 s purge.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Temperature\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"325 °C, 300 °C, 275 °C, 250 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Since one cycle is about 63 s, 100 cycles correspond to roughly 6300 s, so you can read the expected thickness removal near that time on the right-hand axis. At 325 °C, the curve reaches roughly 70 Å (≥6 nm). All lower-temperature curves show less than 6 nm after 100 cycles. Therefore, 325 °C is the best choice because it meets the ≥6 nm target within 100 cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Higher temperatures produce steeper mass-loss slopes. The 250 °C curve decreases slowly, while the 300 °C and 325 °C curves show progressively faster loss. This indicates that the etching reaction accelerates significantly with temperature.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA / purge / HF / purge (“2–30–1–30”).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"250 °C, 275 °C, 300 °C, and 325 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"MCPC increases from −4.2 ng/(cm² cycle) at 250 °C to −23.3 ng/(cm² cycle) at 325 °C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Consistent removal of Al₂O₃ per cycle, Predictable thickness reduction, Minimal fluctuations between cycles\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Temperature control is crucial because it directly determines the etch rate. By selecting appropriate temperatures, practitioners can achieve precise and uniform removal of Al₂O₃, tailor etch depths, and ensure consistent results across multiple samples or production batches. Proper temperature management is therefore essential for reproducible, high-quality ALE in both research and industrial applications.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_5_figure_2.jpg","caption":"Figure 2. Relative atomic percentages among In, Ga, and As in InGaAs, and the atomic percentage of Cl on the InGaAs surface measured by XPS as a function of Cl adsorption time from 2.5 to $20\\mathrm{s}$ . The power to the ICP ion source was $200\\mathrm{W}$ at $\\mathrm{Cl}_2$ $1.0~\\mathrm{mTorr}$ of process chamber pressure. The grid voltages to the ICP ion gun were maintained at $-10\\mathrm{V}$ for the first grid and $-20\\mathrm{V}$ for the second grid.","id":"validation/atomic-layer-etching/experimental-usecase/5/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/5/figure_2","subset":"multi-axis-chart","split":"validation","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/Atomic layer etching of InGaAs by controlled ion beam.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":658,"height":461,"image_format":"jpeg","image_sha256":"469cc7db3f29fb94c823b9b47ee159e5144071ec780e5b3658bd95f74b229200","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":653,"height":458}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the changes in In:Ga:As atomic percentage and Cl atomic percentage on the surface over time during Cl adsorption.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cl Adsorption Time (sec) | In Atomic Percentage (%) | Ga Atomic Percentage (%) |As Atomic Percentage (%) |Cl Atomic Percentage (%) |\\n|---|---|---|---|---|\\n| Pristine | 45 |36|15| 0 |\\n| 2.5 | 48 | 39|14|7 |\\n| 5 | 49 |35|15|12 |\\n| 10 | 49 |35|15|16 |\\n| 20 | 46 | 35|16 |16|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Eventhough there is a slight increase in indium content for short times, the overal ratio remains constant, so it does not affect the ratios.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3.2:2.4:1\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The chlorine is only added to the surface. If the full surface is covered in chlorine, there cannot be any additional chlorine added.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"15 seconds\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_5_figure_4.jpg","caption":"Figure 4. Sputter etch depth of InGaAs itself during the $\\mathrm{Ar^{+}}$ ion gun operation as a function of (a) different first grid voltages for the $\\mathrm{Ar^{+}}$ ion exposure time of 50 s/cycle and (b) $\\mathrm{Ar^{+}}$ ion exposure time for the first grid voltages of $+10$ and $+30\\mathrm{V}$ . The sputtering was cyclic processed for 100 cycles without adsorption of chlorine during the chlorine adsorption step. The power of the ICP ion gun for the $\\mathrm{Ar^{+}}$ ion was maintained at $200\\mathrm{W}$ at the process chamber pressure of $3.0\\mathrm{mTorr}$ Ar. The second grid voltage to the ICP ion gun was maintained at $-100\\mathrm{V}$ for a directional ion beam while the third grid voltage was grounded.","id":"validation/atomic-layer-etching/experimental-usecase/5/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/5/figure_4","subset":"multi-axis-chart","split":"validation","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/Atomic layer etching of InGaAs by controlled ion beam.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":653,"height":444,"image_format":"jpeg","image_sha256":"965e6fddb0022eb82ebbe0a3b65d0f8de71e8855f0066e243349c4384beacdf8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":649,"height":445}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the etch depth and etch rate of various materials (InGaAs, Si, SiO2, HfO2, PR, ACL) as a function of Ar+ ion exposure time. The etch depth increases with exposure time for InGaAs, while the etch rate saturates at around 50 seconds.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ar+ Ion Exposure Time (sec/cycle) | Etch Depth (Å) InGaAs|Etch Depth (Å) Other| Etch Rate (Å/Cycle) InGaAs|Etch Rate (Å/Cycle) Other|\\n|---|---|---|---|---|\\n| 0 | 0 | 0 |0|0|\\n| 20 | 40 | 0 |0.4|0|\\n| 30 | 60 | 0|0.6 |0|\\n| 50 | 100 | 0|1.0 |0|\\n| 80 | 100 |0| 1.0 |0|\\n| 100 | 100 | 0|1.0 |0|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Only the InGaAs is etched upon the plasma exposure, so the process is selective for InGaAs.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The argon ions only remove the modified layer, which is 1.1 angstrom thick.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Instead of using a modification with chlorine, use something else, such as fluorine.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"100 cycles.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_5_figure_6.jpg","caption":"Figure 6. Etch depth $(\\mathring{\\mathrm{A}})$ and etch rate (A/cycle) of InGaAs measured as a function of the number of ALE cycles.","id":"validation/atomic-layer-etching/experimental-usecase/5/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/5/figure_6","subset":"multi-axis-chart","split":"validation","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/Atomic layer etching of InGaAs by controlled ion beam.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":669,"height":450,"image_format":"jpeg","image_sha256":"b0d1b89df148cef029667379e1942de01f583ff63652cfb3e76e082cc00f5c6c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":666,"height":447}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the etch depth and etch rate as a function of the number of ALE cycles. The etch depth increases with the number of cycles, whereas the etch rate remains constant.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| No. of ALE Cycles | Etch Depth (Å) | Etch Rate (Å/Cycle) |\\n|---|---|---|\\n| 100 | 100 ± 5 | 1.1 ± 0.1 |\\n| 200 | 210 ± 5 | 1.1 ± 0.1 |\\n| 300 | 325 ± 5 | 1.1 ± 0.1 |\\n| 400 | 450 ± 5 | 1.1 ± 0.1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate is normalized per cycle, for ALE, this is not dependent on the number of cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The value is 1.1 angstrom/cycle. This can also be determined by determining the slope of the etch depth.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes there is a region. This is most likely to occur in the initial cycles. This also holds for ALD, where it is called nucleation delay.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"44 nm.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_5_figure_7.jpg","caption":"Figure 7. Surface roughness and surface composition after the 100 cycles of ALE, investigated using AFM and XPS, respectively. As references, the surface roughness and surface composition of as-received un-etched InGaAs and the InGaAs etched by conventional RIE were included. For the InGaAs RIE, InGaAs was etched for 1 min using an ICP etcher operated at $13.56\\mathrm{MHz}200\\mathrm{W}$ $-50\\mathrm{V}$ of bias voltage, and $\\mathrm{Cl}_2$ gas pressure of $50\\mathrm{mTorr}$","id":"validation/atomic-layer-etching/experimental-usecase/5/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/5/figure_7","subset":"multi-axis-chart","split":"validation","classification":[{"panel_id":"a","label":"multi-axis chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/Atomic layer etching of InGaAs by controlled ion beam.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":669,"height":425,"image_format":"jpeg","image_sha256":"fd8be89b63a523530024c7306f006c2326d06df9f46dea04d6bd4c136211d814","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":3,"width":664,"height":423}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The grouped bar chart displays atomic percentages of various elements (In, Ga, As, Cl, C) across three conditions (Ref., ALE, RIE) along with RMS roughness measurements.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Atomic Percentage (%) | Ref. | ALE | RIE |\\n|---|---|---|---|\\n| In | 20.6% | 29.5% | 38.0% |\\n| Ga | 43.4% | 21.8% | 18.4% |\\n| As | 6.6% | 5.3% | 2.4% |\\n| Cl | 0.0% | 0.0% | 7.8% |\\n| RMS Roughness (nm) | 4.5 | 4.8 | 5.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both for the ALE and the Ref. the percentages are roughly equal. This shows that there is no selectivity towards specific species in the film.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes there is an influence, where Ga and As seem to be sputtered selectively.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ALE shows a lower RMS roughness than RIE so ALE is more gentle and the ion impact from RIE has bigger impact on the\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The roughness is not extremely low, but there has been some added processing with C incorporation so it is unclear, based on this figure whether this deposition leads to low roughness.\"}]}]"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_5.jpg","caption":"Figure 5. Mass change versus time for $\\mathrm{Al}_2\\mathrm{O}_3$ ALE using sequential TMA and HF exposures at 250, 275, 300, and $325^{\\circ}C$","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_5","subset":"multi-axis-chart","split":"validation","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows mass loss from Al2O3 during repeated TMA/HF cycles at four temperatures. All traces decrease roughly linearly with time, but the slope becomes steeper at higher temperatures, indicating faster etching. The 250 °C curve shows the smallest mass loss while the 325 °C trace shows the largest, consistent with thermally enhanced reaction rates. The right-hand axis converts the mass loss to an equivalent thickness removed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Time (s) | Mass change (ng/cm²) |\\n|------------------|----------|-----------------------|\\n| 250 | 0 | ~0 |\\n| 250 | 4000 | ~-500 |\\n| 250 | 8000 | ~-900 |\\n| 275 | 0 | ~0 |\\n| 275 | 4000 | ~-800 |\\n| 275 | 8000 | ~-1600 |\\n| 300 | 0 | ~0 |\\n| 300 | 4000 | ~-1100 |\\n| 300 | 8000 | ~-2200 |\\n| 325 | 0 | ~0 |\\n| 325 | 4000 | ~-1500 |\\n| 325 | 8000 | ~-3000 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2.0 s of TMA exposure, 30.0 s of N2 purge, 1.0 s of HF exposure, and 30.0 s of N2 purge.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mass change per cycle increases with higher temperature values.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"325 °C\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The information shown in the figure makes it possible to determine that the temperature of the ALE cycle affects the rates of the process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process with the highest etch rate is the one at 325 degree Celcius.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This would take 6000 seconds.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Industrial players usually aim for the highest throughput. This would be achieved with the process at 325 degrees Celcius.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The process at 250 degrees Celcius.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At each temperature, the mass decreases approximately linearly with time. The lines do not show curvature or abrupt changes over the plotted interval. This indicates a steady accumulation of mass loss during the process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 250 °C and 275 °C curves remain closest together.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mass change on the left y-axis directly represents cumulative material removal.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thickness axis provides an alternative way to interpret the same trend in length units. It allows readers to estimate film removal depth directly from the plot. This is useful for process planning without additional conversion.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Etch rate increases approximately 5-fold from 0.14 Å/cycle at 250°C to 0.75 Å/cycle at 325°C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The dual axes allow direct comparison of the raw QCM measurement (mass change in ng/cm²) with the more practically relevant thickness change (in Å). The thickness conversion uses the known Al₂O₃ density of 3.1 g/cm³, enabling readers to immediately understand the etch depth without manual calculation. This is particularly useful for process development where target etch depths are typically specified in thickness units.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Linear behavior confirms that the etch rate remains constant throughout 100 cycles at each temperature, indicating stable, reproducible etching.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 75 Å (based on 0.75 Å/cycle × 100 cycles), as shown on the right y-axis.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"TMA dose (2 s) → 2. Purge (30 s) → 3. HF dose (1 s) → 4. Purge (30 s).\\nThe notation defines the precise timing: reactant dose length and purge length. This controls reactant exposure and byproduct removal, ensuring self-limiting surface reactions and preventing gas-phase mixing.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"325°C is ruled out. Using 300°C (the highest allowed) maximizes the etch rate within the constraint, reducing process time. The trade-off is operating near the budget limit, which may increase thermal stress compared to 250°C, but offers significantly faster throughput.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing temperature increases the slope (etch rate). This follows the Arrhenius law, where higher thermal energy accelerates the surface reaction kinetics of both the fluorination (HF) and ligand-exchange (TMA) steps, leading to more material removed per unit time.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If CVD-like growth occurred (e.g., TMA and HF mixing in the gas phase), the net mass change would likely turn positive (mass gain) or the etch rate would slow down drastically, causing the curves to flatten or curve upward. The fact that the lines remain strictly negative and linear confirms that the process is operating in a pure etching mode with no competing deposition artifacts.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"These MCPCs correspond to etch rates hence a mass loss is a direct indicator of thickness decreasing and vice versa.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Etch rates are\\n1. 0.14 Å/cycle at 250 °C \\n2. 0.75 Å/cycle at 325 °C\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The determination of these etch rates is based on the Al2O3 ALD film density of 3.1 g/cm3, the MCPC, the number of ALE cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"100\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The MCPC increases with temperature from -4.2 ng/(cm^2 cycle) at 250 °C to -23.3 ng/(cm2 cycle) at 325 °C. This corresponds to etch rates of 0.14 Å/cycle at 250 °C to 0.75 Å/cycle at 325 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For this study, a quartz crystal microbalance (QCM) was used, which yields mass change in ng/cm^2. Before the experiments, the density of the Al2O3 substrate was determined to be 3.1 g/cm^3. Dividing mass change (per area) by the density in this case results in the material thickness that was etched per cycle, expressed in Å.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 s TMA exposure, 30 s purge, 1 s HF exposure, 30 s purge.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Temperature\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"325 °C, 300 °C, 275 °C, 250 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Since one cycle is about 63 s, 100 cycles correspond to roughly 6300 s, so you can read the expected thickness removal near that time on the right-hand axis. At 325 °C, the curve reaches roughly 70 Å (≥6 nm). All lower-temperature curves show less than 6 nm after 100 cycles. Therefore, 325 °C is the best choice because it meets the ≥6 nm target within 100 cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Higher temperatures produce steeper mass-loss slopes. The 250 °C curve decreases slowly, while the 300 °C and 325 °C curves show progressively faster loss. This indicates that the etching reaction accelerates significantly with temperature.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA / purge / HF / purge (“2–30–1–30”).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"250 °C, 275 °C, 300 °C, and 325 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"MCPC increases from −4.2 ng/(cm² cycle) at 250 °C to −23.3 ng/(cm² cycle) at 325 °C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Consistent removal of Al₂O₃ per cycle, Predictable thickness reduction, Minimal fluctuations between cycles\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Temperature control is crucial because it directly determines the etch rate. By selecting appropriate temperatures, practitioners can achieve precise and uniform removal of Al₂O₃, tailor etch depths, and ensure consistent results across multiple samples or production batches. Proper temperature management is therefore essential for reproducible, high-quality ALE in both research and industrial applications.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":667,"height":486}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":667,"height":486,"image_format":"jpeg","image_sha256":"9722bbee3fbccb297a7aa63c36e9af6538233ba23be1ad874fca144304ed8921","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_5_figure_2.jpg","caption":"Figure 2. Relative atomic percentages among In, Ga, and As in InGaAs, and the atomic percentage of Cl on the InGaAs surface measured by XPS as a function of Cl adsorption time from 2.5 to $20\\mathrm{s}$ . The power to the ICP ion source was $200\\mathrm{W}$ at $\\mathrm{Cl}_2$ $1.0~\\mathrm{mTorr}$ of process chamber pressure. The grid voltages to the ICP ion gun were maintained at $-10\\mathrm{V}$ for the first grid and $-20\\mathrm{V}$ for the second grid.","id":"validation/atomic-layer-etching/experimental-usecase/5/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/5/figure_2","subset":"multi-axis-chart","split":"validation","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the changes in In:Ga:As atomic percentage and Cl atomic percentage on the surface over time during Cl adsorption.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cl Adsorption Time (sec) | In Atomic Percentage (%) | Ga Atomic Percentage (%) |As Atomic Percentage (%) |Cl Atomic Percentage (%) |\\n|---|---|---|---|---|\\n| Pristine | 45 |36|15| 0 |\\n| 2.5 | 48 | 39|14|7 |\\n| 5 | 49 |35|15|12 |\\n| 10 | 49 |35|15|16 |\\n| 20 | 46 | 35|16 |16|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Eventhough there is a slight increase in indium content for short times, the overal ratio remains constant, so it does not affect the ratios.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3.2:2.4:1\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The chlorine is only added to the surface. If the full surface is covered in chlorine, there cannot be any additional chlorine added.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"15 seconds\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":653,"height":458}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/Atomic layer etching of InGaAs by controlled ion beam.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":658,"height":461,"image_format":"jpeg","image_sha256":"469cc7db3f29fb94c823b9b47ee159e5144071ec780e5b3658bd95f74b229200","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_5_figure_4.jpg","caption":"Figure 4. Sputter etch depth of InGaAs itself during the $\\mathrm{Ar^{+}}$ ion gun operation as a function of (a) different first grid voltages for the $\\mathrm{Ar^{+}}$ ion exposure time of 50 s/cycle and (b) $\\mathrm{Ar^{+}}$ ion exposure time for the first grid voltages of $+10$ and $+30\\mathrm{V}$ . The sputtering was cyclic processed for 100 cycles without adsorption of chlorine during the chlorine adsorption step. The power of the ICP ion gun for the $\\mathrm{Ar^{+}}$ ion was maintained at $200\\mathrm{W}$ at the process chamber pressure of $3.0\\mathrm{mTorr}$ Ar. The second grid voltage to the ICP ion gun was maintained at $-100\\mathrm{V}$ for a directional ion beam while the third grid voltage was grounded.","id":"validation/atomic-layer-etching/experimental-usecase/5/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/5/figure_4","subset":"multi-axis-chart","split":"validation","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the etch depth and etch rate of various materials (InGaAs, Si, SiO2, HfO2, PR, ACL) as a function of Ar+ ion exposure time. The etch depth increases with exposure time for InGaAs, while the etch rate saturates at around 50 seconds.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ar+ Ion Exposure Time (sec/cycle) | Etch Depth (Å) InGaAs|Etch Depth (Å) Other| Etch Rate (Å/Cycle) InGaAs|Etch Rate (Å/Cycle) Other|\\n|---|---|---|---|---|\\n| 0 | 0 | 0 |0|0|\\n| 20 | 40 | 0 |0.4|0|\\n| 30 | 60 | 0|0.6 |0|\\n| 50 | 100 | 0|1.0 |0|\\n| 80 | 100 |0| 1.0 |0|\\n| 100 | 100 | 0|1.0 |0|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Only the InGaAs is etched upon the plasma exposure, so the process is selective for InGaAs.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The argon ions only remove the modified layer, which is 1.1 angstrom thick.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Instead of using a modification with chlorine, use something else, such as fluorine.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"100 cycles.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":649,"height":445}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/Atomic layer etching of InGaAs by controlled ion beam.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":653,"height":444,"image_format":"jpeg","image_sha256":"965e6fddb0022eb82ebbe0a3b65d0f8de71e8855f0066e243349c4384beacdf8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_5_figure_6.jpg","caption":"Figure 6. Etch depth $(\\mathring{\\mathrm{A}})$ and etch rate (A/cycle) of InGaAs measured as a function of the number of ALE cycles.","id":"validation/atomic-layer-etching/experimental-usecase/5/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/5/figure_6","subset":"multi-axis-chart","split":"validation","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the etch depth and etch rate as a function of the number of ALE cycles. The etch depth increases with the number of cycles, whereas the etch rate remains constant.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| No. of ALE Cycles | Etch Depth (Å) | Etch Rate (Å/Cycle) |\\n|---|---|---|\\n| 100 | 100 ± 5 | 1.1 ± 0.1 |\\n| 200 | 210 ± 5 | 1.1 ± 0.1 |\\n| 300 | 325 ± 5 | 1.1 ± 0.1 |\\n| 400 | 450 ± 5 | 1.1 ± 0.1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate is normalized per cycle, for ALE, this is not dependent on the number of cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The value is 1.1 angstrom/cycle. This can also be determined by determining the slope of the etch depth.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes there is a region. This is most likely to occur in the initial cycles. This also holds for ALD, where it is called nucleation delay.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"44 nm.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":1,"width":666,"height":447}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/Atomic layer etching of InGaAs by controlled ion beam.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":669,"height":450,"image_format":"jpeg","image_sha256":"b0d1b89df148cef029667379e1942de01f583ff63652cfb3e76e082cc00f5c6c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_5_figure_7.jpg","caption":"Figure 7. Surface roughness and surface composition after the 100 cycles of ALE, investigated using AFM and XPS, respectively. As references, the surface roughness and surface composition of as-received un-etched InGaAs and the InGaAs etched by conventional RIE were included. For the InGaAs RIE, InGaAs was etched for 1 min using an ICP etcher operated at $13.56\\mathrm{MHz}200\\mathrm{W}$ $-50\\mathrm{V}$ of bias voltage, and $\\mathrm{Cl}_2$ gas pressure of $50\\mathrm{mTorr}$","id":"validation/atomic-layer-etching/experimental-usecase/5/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/5/figure_7","subset":"multi-axis-chart","split":"validation","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The grouped bar chart displays atomic percentages of various elements (In, Ga, As, Cl, C) across three conditions (Ref., ALE, RIE) along with RMS roughness measurements.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Atomic Percentage (%) | Ref. | ALE | RIE |\\n|---|---|---|---|\\n| In | 20.6% | 29.5% | 38.0% |\\n| Ga | 43.4% | 21.8% | 18.4% |\\n| As | 6.6% | 5.3% | 2.4% |\\n| Cl | 0.0% | 0.0% | 7.8% |\\n| RMS Roughness (nm) | 4.5 | 4.8 | 5.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both for the ALE and the Ref. the percentages are roughly equal. This shows that there is no selectivity towards specific species in the film.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes there is an influence, where Ga and As seem to be sputtered selectively.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ALE shows a lower RMS roughness than RIE so ALE is more gentle and the ion impact from RIE has bigger impact on the\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The roughness is not extremely low, but there has been some added processing with C incorporation so it is unclear, based on this figure whether this deposition leads to low roughness.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":3,"width":664,"height":423}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/Atomic layer etching of InGaAs by controlled ion beam.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":669,"height":425,"image_format":"jpeg","image_sha256":"fd8be89b63a523530024c7306f006c2326d06df9f46dea04d6bd4c136211d814","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/multi-spectra-chart/test/metadata.jsonl b/subsets/multi-spectra-chart/test/metadata.jsonl index e3dba434bb962fc644c6ee6ae7808160d2d92b0c..f4d3f28f7bef459229e818b54950fb68a0b7b8f0 100644 --- a/subsets/multi-spectra-chart/test/metadata.jsonl +++ b/subsets/multi-spectra-chart/test/metadata.jsonl @@ -1,47 +1,47 @@ -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_20_fig_2.jpg","caption":"Fig. 2 XRR measurements of the two selected films with fitted simulations giving thicknesses of 32 and $23~\\mathrm{nm}$ and surface roughnesses of 0.7 and $0.6 \\mathrm{nm}$ for lanthanum titanate films with $33\\%$ and $25\\%$ of $\\mathrm{TiO_2}$ subcycles, respectively.","id":"test/atomic-layer-deposition/experimental-usecase/20/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/20/fig_2","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/Titta Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":483,"height":383,"image_format":"jpeg","image_sha256":"aea6a5dcba1885e9964bafb6074664fc5e793aa075889d53d71cf37c8afe67ec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":483,"height":383}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays X-ray Reflectivity (XRR) measurements plotted as the logarithm of intensity (in arbitrary units) versus the incident angle (in degrees). It compares the experimental reflectivity profiles against theoretical simulations for two lanthanum titanate films deposited with 33% and 25% TiO2 sub-cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Angle (°) | Log(intensity) (a.u.): 33% TiO2 sub-cycles | Log(intensity) (a.u.): Simulation for 33% TiO2 sub-cycles | Log(intensity) (a.u.):25 % TiO2 sub-cycles |Log(intensity) (a.u.): Simulation for 25% TiO2 sub-cycles | \\n|---|---|---|---|---|\\n| 0.0 | 16096 | 100000 | 1517 | 8284 |\\n| 0.5 | 36248 | 69142 | 3233 | 5419 |\\n| 1.0 | 974 | 974 | 110 | 110 |\\n| 1.5 | 154 | 154 | 41 | 41 | \\n| 2.0 | 34 | 34 | 3 | 3 |\\n| 2.5 | 42 | 42 | 1 | 1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The films are rather smooth (the presence of Kiessig fringes reveals small roughness).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film deposited with 33% TiO2 sub-cycles is thicker (as indicated by more frequent Kiessig fringes).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The simulation deviates most when the beam is oriented closest to 90 degrees relative to the surface normal. This corresponds to 0.0 - 0.5 degrees on the X-axis. In this region, the simulations overestimate the results. For angles higher than 0.5, the predicted values nearly perfectly align with the experimental ones.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Less than 1.0 (approx. 0.5).\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_21_fig_6.jpg","caption":"Fig. 6 XPS (a) C 1s, (b) Li 1s and (c) O 1s spectra for $\\mathrm{Li}_{2}\\mathrm{CO}_{3}$ grown by thermal ALD at $150^{\\circ}\\mathrm{C}$ . The measured spectra (black line) and fitted peaks (blue and red) are plotted together. The obtained $\\mathrm{Li}_{2}\\mathrm{CO}_{3}$ stoichiometry is $33.0\\mathrm{at\\%}$ Li, $17.7\\mathrm{at\\%}$ C and $49.3\\mathrm{at\\%}$ O.","id":"test/atomic-layer-deposition/experimental-usecase/21/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/21/fig_6","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/N. Hornsveld et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1294,"height":333,"image_format":"jpeg","image_sha256":"a9ae980c149cb686bab2c217352584d8eb0d38ca5a510a7824f981262b970517","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":15,"y":5,"width":412,"height":326},{"panel_id":"b","x":438,"y":2,"width":423,"height":329},{"panel_id":"c","x":869,"y":3,"width":423,"height":328}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the intensity of C 1s binding energy peaks at various energies\"},{\"panel_id\":\"b\",\"text\":\"The figure displays the intensity of Li 1s binding energy peaks at various energies\"},{\"panel_id\":\"c\",\"text\":\"The figure illustrates the intensity of O 1s binding energy peaks at various energies\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Component | Binding Energy (eV) |\\n|-----------|----------------------|\\n| Li₂CO₃ | ~290 |\\n| C=O | ~288 |\\n| C–O | ~286 |\\n| C–C | ~284.5 |\"},{\"panel_id\":\"b\",\"text\":\"| Component | Binding Energy (eV) |\\n|-----------|----------------------|\\n| Li₂CO₃ | ~55.5 |\"},{\"panel_id\":\"c\",\"text\":\"| Component | Binding Energy (eV) |\\n|-----------|----------------------|\\n| Li₂CO₃ | ~532 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The binding energy scale was calibrated by using the hydrocarbon contamination C 1s peak at 285.0 eV. As expected, the C 1s spectrum shows a main peak at 290.1 eV assigned to the carbonate environment in Li2CO3. The other peaks fitted with a red line are associated with\\nadventitious carbon on the sample surface\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The O 1s spectrum consists of a peak with a maximum at 531.8 eV. The shape of the peak is slightly asymmetric. To visualize the asymmetry a second peak is fitted to the data. The asymmetry can be explained by the crystallographic structure of Li2CO3 in which two oxygen atoms have an identical environment,\\nbut the third oxygen has a different environment of surrounding atoms\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The obtained stoichiometry for this flm was: \\n1. 33.0 at% lithium\\n2. 17.7 at% carbon \\n3. 49.3 at% oxygen\\ncorresponding to stoichiometric Li2CO3\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_23_figure_4.jpg","caption":"Figure 4. (a) In situ FTIR spectra acquired after 5, 10, 15, 20, 25, and 30 complete TMGa-O₃ ALD cycles at $350^{\\circ}\\mathrm{C}$ referenced to the initial substrate spectrum. (b) Integrated absorbance of spectra in Figure 4a over the range $500 - 800 \\mathrm{cm}^{-1}$ versus the number of TMGa-O₃ ALD cycles.","id":"test/atomic-layer-deposition/experimental-usecase/23/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/23/figure_4","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/David J. Comstock et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":967,"height":483,"image_format":"jpeg","image_sha256":"bcbe81cdbb1f55771ba1d20fce71d33a0a0efed76d20a6d0179c10cbae471484","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":5,"width":464,"height":478},{"panel_id":"b","x":485,"y":4,"width":480,"height":479}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"In situ FTIR spectra acquired after 5, 10, 15, 20, 25, and 30 complete TMGa-O3 ALD cycles at 350 °C referenced to the initial substrate spectrum.\"},{\"panel_id\":\"b\",\"text\":\"Integrated absorbance of spectra in Figure 4a over the range 500−800 cm−1 versus the number of TMGa-O3 ALD cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance 5 Cycles | Absorbance 10 Cycles | Absorbance 15 Cycles | Absorbance 20 Cycles | Absorbance 25 Cycles | Absorbance 30 Cycles |\\n|-------------------|------------------------|-------------------------|--------------------------|--------------------------|--------------------------|--------------------------|\\n| 1000 | 0.02 | 0.03 | 0.03 | 0.04 | 0.04 | 0.05 |\\n| 900 | 0.03 | 0.05 | 0.07 | 0.08 | 0.10 | 0.12 |\\n| 800 | 0.06 | 0.10 | 0.15 | 0.20 | 0.25 | 0.30 |\\n| 700 | 0.10 | 0.18 | 0.25 | 0.32 | 0.38 | 0.45 |\\n| 600 | 0.09 | 0.20 | 0.27 | 0.35 | 0.42 | 0.48 |\\n| 500 | 0.05 | 0.12 | 0.20 | 0.28 | 0.34 | 0.40 |\"},{\"panel_id\":\"b\",\"text\":\"| ALD cycles | Integrated absorbance |\\n|---|---|\\n| 5 | 25 |\\n| 10 | 50 |\\n| 15 | 75 |\\n| 20 | 90 |\\n| 25 | 115 |\\n| 30 | 130 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 800–500 cm⁻¹ region was used, where the bulk Ga₂O₃ vibrational modes are expected to appear.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The absorbance increases with an increasing number of Ga₂O₃ ALD cycles, indicating progressive film growth.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiO₂ nanopowder.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It indicates a layer-by-layer growth behavior of Ga₂O₃.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_23_figure_9.jpg","caption":"Figure 9, the as-deposited films were amorphous and exhibited no observable diffraction peaks, which is similar to ALD $\\mathrm{Ga}_2\\mathrm{O}_3$","id":"test/atomic-layer-deposition/experimental-usecase/23/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/23/figure_9","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/David J. Comstock et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":477,"height":500,"image_format":"jpeg","image_sha256":"58cbbf4bc08a85b0e2c5c7a352c4afffc7c38bb1090837ba63d5d17f19f8b7b1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":477,"height":500}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays XRD measurements from two 800 Å Ga2O3 films, with (a) as-deposited at 350 °C and (b) annealed at 900 °C for 20 minutes under Ar.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | 2θ (degrees) |\\n|---|---|\\n| As-deposited | |\\n| Annealed at 900 °C | Peaks at 31, 32, 38, 39, 50, 60 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"900 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"800 Å\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"20 minutes under argon atmosphere.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The as-deposited film (a) shows no signals in the XRD measurements, whilst the annealed film (b) does show clear peaks/signals. This means that the annealing caused the amorphous as-deposited film to crystallize. The authors have determined the crystallinity of the film to be β-Ga2O3.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_24_figure_4.jpg","caption":"Figure 4. XPS core energy spectra for (a) titanium $2\\mathrm{p}$ orbital and (b) oxygen 1s orbital.","id":"test/atomic-layer-deposition/experimental-usecase/24/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/24/figure_4","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/Martin Rose et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":631,"height":919,"image_format":"jpeg","image_sha256":"4a0681f84fa46911f502cbc7d341625c1169778176e97a03817c917368fda7af","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":3,"width":625,"height":453},{"panel_id":"b","x":7,"y":454,"width":623,"height":443}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The spectral chart shows high-resolution XPS spectra of a titanium oxide film.displays the Ti 2p spin-orbit doublet with Ti 2p₃/₂ at ~459.0 eV and Ti 2p₁/₂ at ~464.7 eV (Δ ≈ 5.7 eV), confirming titanium in the fully oxidized Ti⁴⁺ state (TiO₂).\"},{\"panel_id\":\"b\",\"text\":\"The spectral chart shows an O 1s peak at ~530.5 eV from lattice oxygen, with a higher-binding-energy shoulder (~532 eV) attributed to surface hydroxyl groups or adsorbed species.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Intensity (10³ counts/s) | Condition | Remark |\\n|-------------------:|--------------------:|-------------------|-----------------|\\n| 454 | 0.49 | Ti 2p measured | |\\n| 454 | 0.49 | Background | |\\n| 455 | 0.55 | Ti 2p measured | |\\n| 455 | 0.55 | Background | |\\n| 456 | 0.60 | Ti 2p measured | |\\n| 456 | 0.60 | Background | |\\n| 457 | 0.71 | Ti 2p measured | |\\n| 457 | 0.49 | Background | |\\n| 458 | 1.61 | Ti 2p measured | |\\n| 458 | 0.49 | Background | |\\n| 459 | 17.23 | Ti 2p measured | Primary peak |\\n| 459 | 0.91 | Background | |\\n| 460 | 8.48 | Ti 2p measured | |\\n| 460 | 1.34 | Background | |\\n| 461 | 2.08 | Ti 2p measured | |\\n| 461 | 1.50 | Background | |\\n| 462 | 1.76 | Ti 2p measured | |\\n| 462 | 1.50 | Background | |\\n| 463 | 2.13 | Ti 2p measured | |\\n| 463 | 1.50 | Background | |\\n| 464 | 3.77 | Ti 2p measured | |\\n| 464 | 1.55 | Background | |\\n| 465 | 6.20 | Ti 2p measured | Secondary peak |\\n| 465 | 1.76 | Background | |\\n| 466 | 4.04 | Ti 2p measured | |\\n| 466 | 1.87 | Background | |\\n| 467 | 2.45 | Ti 2p measured | |\\n| 467 | 2.03 | Background | |\\n| 468 | 2.13 | Ti 2p measured | |\\n| 468 | 2.03 | Background | |\\n| 469 | 2.03 | Ti 2p measured | |\\n| 469 | | Background | |\\n| 470 | 2.24 | Ti 2p measured | |\\n| 470 | | Background | |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Intensity (10³ counts/s) | Condition | Remark |\\n|-------------------:|--------------------:|------------------|---------------|\\n| 525 | 2.26 | O 1s measured | |\\n| 525 | 2.26 | O 1s TiOx | |\\n| 525 | 2.26 | O 1s | |\\n| 525 | | Background | |\\n| 526 | 2.26 | O 1s measured | |\\n| 526 | 2.26 | O 1s TiOx | |\\n| 526 | 2.26 | O 1s | |\\n| 526 | | Background | |\\n| 527 | 2.26 | O 1s measured | |\\n| 527 | 2.26 | O 1s TiOx | |\\n| 527 | 2.26 | O 1s | |\\n| 527 | | Background | |\\n| 528 | 2.39 | O 1s measured | |\\n| 528 | 2.39 | O 1s TiOx | |\\n| 528 | 2.39 | O 1s | |\\n| 528 | | Background | |\\n| 529 | 2.78 | O 1s measured | |\\n| 529 | 2.71 | O 1s TiOx | |\\n| 529 | 2.45 | O 1s | |\\n| 529 | 2.39 | Background | |\\n| 530 | 22.20 | O 1s measured | Primary peak |\\n| 530 | 21.70 | O 1s TiOx | |\\n| 530 | 2.71 | O 1s | |\\n| 530 | 2.45 | Background | |\\n| 531 | 16.40 | O 1s measured | |\\n| 531 | 15.11 | O 1s TiOx | |\\n| 531 | 3.88 | O 1s | |\\n| 531 | 2.65 | Background | |\\n| 532 | 5.03 | O 1s measured | |\\n| 532 | 3.22 | O 1s TiOx | |\\n| 532 | 4.71 | O 1s | |\\n| 532 | 2.84 | Background | |\\n| 533 | 3.48 | O 1s measured | |\\n| 533 | 2.84 | O 1s TiOx | |\\n| 533 | 3.55 | O 1s | |\\n| 533 | 2.78 | Background | |\\n| 534 | 2.78 | O 1s measured | |\\n| 534 | 2.78 | O 1s TiOx | |\\n| 534 | 2.84 | O 1s | |\\n| 534 | 2.71 | Background | |\\n| 535 | 2.90 | O 1s measured | |\\n| 535 | 2.90 | O 1s TiOx | |\\n| 535 | | O 1s | |\\n| 535 | | Background | |\\n| 536 | 3.16 | O 1s measured | |\\n| 536 | 3.16 | O 1s TiOx | |\\n| 536 | | O 1s | |\\n| 536 | | Background | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The binding energy at ~459 eV is characteristic of fully oxidized Ti⁴⁺ in a TiO₂ lattice. If the film were under-oxidized or metallic (Ti⁰), the Ti 2p₃/₂ peak would shift to a much lower binding energy, around 453.8–454 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Annealing typically drives off loosely bound surface species (water/hydroxyle) and densifies the lattice. Therefore, the shoulder peak (~532 eV) would decrease in area, while the lattice peak (530.5 eV) would become sharper and more dominant. This would imply a more stable, stoichiometric, and dense TiO2 film with fewer surface defects.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sharp, symmetrical peaks in panel (a) confirm the absence of Ti³⁺ (sub-oxide) states. This is important because Ti³⁺ is associated with oxygen vacancies, which act as conductive defects (n-type dopants). A film containing Ti³⁺ would show higher leakage current, whereas the purely Ti⁴⁺ film observed here ensures good electrical insulation.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The peak at ~532 eV typically corresponds to surface hydroxyl groups (Ti-OH). In ALD, these hydroxyls act as the reactive nucleation sites. Without them, the incoming precursor (like TiCl4 or TDMAT) would have no chemical handle to react with, leading to poor nucleation or no growth.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_24_figure_5.jpg","caption":"Figure 5. TOF-SIMS profiles of carbon contamination for films deposited between 235 and $295^{\\circ}\\mathrm{C}$ . The deposition temperature increases along the arrow. The decrease of carbon contamination with increasing deposition temperature can be observed. The sample is divided into regions: the surface (I), the thin film region (II), the interface between the thin film and the substrate (III), and the bulk substrate (IV).","id":"test/atomic-layer-deposition/experimental-usecase/24/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/24/figure_5","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/Martin Rose et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":631,"height":445,"image_format":"jpeg","image_sha256":"a4374f3abe6b7d33f4c10315ccb442fb9a8aa03a7903b1413c7b0a39029364b9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":626,"height":443}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multi line chart shows Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) depth profiles characterizing carbon contamination decreases with increasing deposition temperature (235–295 °C). Films grown at lower temperature exhibit higher carbon content, while higher temperatures promote cleaner films due to more complete ligand removal and byproduct desorption.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sputtering time (s) | Carbon content (counts/s) | Condition |\\n|-------------------:|--------------------------:|-----------|\\n| 0 | 213.8 | 235 °C |\\n| 0 | 171.8 | 250 °C |\\n| 0 | 172.0 | 260 °C |\\n| 0 | 172.0 | 270 °C |\\n| 0 | 172.0 | 285 °C |\\n| 0 | 172.0 | 295 °C |\\n| 50 | 306.0 | 235 °C |\\n| 50 | 259.7 | 250 °C |\\n| 50 | 129.8 | 260 °C |\\n| 50 | 79.2 | 270 °C |\\n| 50 | 41.6 | 285 °C |\\n| 50 | 20.8 | 295 °C |\\n| 100 | 440.2 | 235 °C |\\n| 100 | 369.2 | 250 °C |\\n| 100 | 222.11 | 260 °C |\\n| 100 | 117.33 | 270 °C |\\n| 100 | 79.27 | 285 °C |\\n| 100 | 29.0 | 295 °C |\\n| 150 | 1301.25 | 235 °C |\\n| 150 | 923.36 | 250 °C |\\n| 150 | 574.89 | 260 °C |\\n| 150 | 189.0 | 270 °C |\\n| 150 | 113.02 | 285 °C |\\n| 150 | 54.16 | 295 °C |\\n| 200 | 612.56 | 235 °C |\\n| 200 | 507.79 | 250 °C |\\n| 200 | 453.20 | 260 °C |\\n| 200 | 516.03 | 270 °C |\\n| 200 | 465.80 | 285 °C |\\n| 200 | 318.64 | 295 °C |\\n| 250 | 511.71 | 235 °C |\\n| 250 | 381.82 | 250 °C |\\n| 250 | 343.76 | 260 °C |\\n| 250 | 306.09 | 270 °C |\\n| 250 | 238.98 | 285 °C |\\n| 250 | 217.79 | 295 °C |\\n| 300 | 427.74 | 235 °C |\\n| 300 | 343.76 | 250 °C |\\n| 300 | 301.77 | 260 °C |\\n| 300 | 255.86 | 270 °C |\\n| 300 | 222.11 | 285 °C |\\n| 300 | 176.20 | 295 °C |\\n| 350 | 348.00 | 235 °C |\\n| 350 | 276.66 | 250 °C |\\n| 350 | 243.00 | 260 °C |\\n| 350 | 217.79 | 270 °C |\\n| 350 | 192.68 | 285 °C |\\n| 350 | 138.13 | 295 °C |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The engineer should increase the temperature to 295°C. The peak carbon count in Region III drops from ~1350 counts/s at 235°C to ~350 counts/s at 295°C. This roughly 4x reduction confirms that operating at the upper limit of the thermal window is essential for film purity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If the substrate is a temperature-sensitive polymer (e.g., PET or PEN) with a glass transition temperature below 250°C, operating at 295°C would melt or warp the device. In this case, the engineer must accept the higher carbon contamination of the 235°C process as the necessary trade-off to maintain mechanical integrity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spike in Region III suggests that during the initial cycles (nucleation), the reaction chemistry is different from the steady-state growth. The precursors likely reacted incompletely with the native substrate surface or were trapped by initial surface contaminants, creating a specific carbon-rich interfacial layer before the film quality stabilized in Region II.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TOF-SIMS data shows significantly lower carbon content in Region II for the 285°C sample compared to the 250°C sample. Lower carbon means fewer defect sites to trap charge or facilitate conduction paths (leakage), thereby improving the dielectric's reliability and resistance to breakdown over time.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_3_figure_9.jpg","caption":"Figure 9. Portion of the RBS spectra for hafnium oxide deposited from tetrakis(ethylmethylamido)hafnium at 400 and $450^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-deposition/experimental-usecase/3/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/3/figure_9","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/Hausmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":536,"height":386,"image_format":"jpeg","image_sha256":"92d3c1546b9fe1f166d6a5e2d08b6f82169c7b3e200f7fcfe7ee24a4584c8ed4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":536,"height":386}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The spectrum plots detected counts versus energy for 400 °C and 450 °C, showing separate signals attributed to carbon from the substrate and film and nitrogen in the film.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Energy (MeV) | 400 °C: Counts | 450 °C: Counts |\\n|---|---|---|\\n| 0.475 | 90.9 | 125.1 |\\n| 0.488 | 33.1 | 76.7 |\\n| 0.515 | 24.9 | 61.3 |\\n| 0.594 | 18.9 | 29.1 |\\n| 0.619 | 15.1 | 25.5 |\\n| 0.645 | 16.2 | 25.7 |\\n| 0.675 | 75.3 | 124.2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The visible peaks for carbon and nitrogen at 450 °C indicate a significant contamination. A suitable ALD process window would be at lower temperatures, where impurity signals are lower.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher intensity of the carbon and nitrogen in film.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The counts most likely come from the oxygen signal.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_56_figure_3.jpg","caption":"Figure 3. (a) Core level XPS spectra for $40~\\mathrm{nm}$ LiPON films deposited under conditions of varying temperature and plasma power. By reducing the deposition temperature more nitrogen is incorporated in the layer. When increasing the plasma power, more nitrogen becomes incorporated in triply coordinated form. (b) Temperature dependence of conductivity for different LiPON deposition conditions. A clear increase in conductivity is detected by reducing the temperature and increasing the plasma power. However, saturation seems to appear from $5\\times 10^{-7}\\mathrm{S / cm}$ on.","id":"test/atomic-layer-deposition/experimental-usecase/56/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/56/figure_3","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/Put et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1395,"height":583,"image_format":"jpeg","image_sha256":"71613a0c01c7d82c0c2a0d2d070b47a11193af84e4cbac0b1f67100e1e673505","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":587,"height":582},{"panel_id":"b","x":594,"y":3,"width":796,"height":578}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the intensity of N 1s peaks for different plasma powers and temperatures.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the conductivity (Cond) of LiPO and LiPON materials as a function of inverse temperature (1000/T).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | 275 °C 100 W | 275 °C 200 W | 275 °C 300 W | 100 °C 100 W |\\n| --- | --- |--- | --- | --- |\\n| 408 | - | - | - | - |\\n| 406 | - | - | - | - |\\n| 404 | - | - | - | - |\\n| 402 | - | - | - | - |\\n| 400 | - | - | - | - |\\n| 398 | peak at 399 eV | - | peak at 399 eV | peak at 399 eV |\\n| 396 | peak at 397 eV | peak at 397 eV | peak at 397 eV | peak at 397 eV |\\n| 394 | - | - | - | - |\"},{\"panel_id\":\"b\",\"text\":\"| Cond (S/cm) | LiPO 275C | LiPON 275C 100 W | LiPON 275C 300 W | LiPON 200C 100 W | LiPON 100C 100 W |\\n| --- | --- | --- | --- | --- | --- | \\n| 2.9 | 10^-8 | 10^-7 | 10^-5 | 10^-5 | 10^-5 |\\n| 3.0 | 10^-9 | 10^-7 | 10^-6 | 10^-5 | 10^-5 |\\n| 3.1 | 10^-9 | 10^-8 | 10^-6 | 10^-5 | 10^-6 |\\n| 3.2 | 10^-10 | 10^-8 | 10^-6 | 10^-6 | 10^-6 |\\n| 3.3 | 10^-10 | 10^-8 | 10^-7 | 10^-6 | 10^-6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"275 °C and 100 °C, and plasma power of 100 W, 200 W and 300 W.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 100 °C, 100 W sample exhibits more intense peaks, as well as a shoulder related to the presence of other N species.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Conductivity decreases for all the samples, as the 1000/T value increases.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Adding N2 plasma increases the conductivity of the samples.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_62_fig_3.jpg","caption":"FiG. 3. (Color online) (a) Emission spectrum from a steady-state $\\mathrm{O}_2$ plasma and a spectrum of an $\\mathrm{O}_2$ plasma exposure during a plasma-assisted ALD cycle of $\\mathrm{Al}_2\\mathrm{O}_3$ . The latter spectrum was recorded after an $\\mathrm{Al(CH}_3\\mathrm{)}_3$ dosing step during the first $200~\\mathrm{ms}$ of plasma exposure, whereas the steady-state $\\mathrm{O}_2$ plasma spectrum was recorded well after the plasma half-reaction reached saturation. (b) Time-resolved intensities of emission lines related to plasma species and reaction products after an $\\mathrm{Al(CH}_3\\mathrm{)}_3$ dose had preceded. The plasma was ignited at time $t = \\sim 0.5 \\mathrm{s}$ .","id":"test/atomic-layer-deposition/experimental-usecase/62/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/62/fig_3","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/Mackus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"62","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":633,"height":1041,"image_format":"jpeg","image_sha256":"59dcf68d0c5bd41ee122a07582124e6634662c19bfb6a604eb8e43c9b8513055","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":7,"width":624,"height":502},{"panel_id":"b","x":6,"y":510,"width":628,"height":531}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows OES spectra of an O2 plasma in saturation and shortly after TMA dosing in an ALD cycle.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays the intensity of O, H, O2+, CO, and OH over time, where the plasma is struck after a TMA dose.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | Intensity (a.u.) O2 plasma |Intensity (a.u.) O2 plasma after ALD cycle |\\n|---|---|---|\\n| 260-350 | - | OH range |\\n| 350-720 | - | CO range |\\n| 560 | O2+ peak |O2+ peak |\\n| 610 | - | H peak |\\n| 780 | O peak |O peak |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Intensity (a.u.) O |Intensity (a.u.) H |Intensity (a.u.) O2+ |Intensity (a.u.) CO |Intensity (a.u.) OH |\\n|---|---|---|---|---|---|\\n| 0 | 0 |0 | 0 |0 | 0 |\\n| 1 | 400 |400|750|750|400|\\n| 2 | 500 |0|900|0|0|\\n| 3 | 500 |0|900|0|0|\\n| 4 | 500 |0|900|0|0|\\n| 5 | 500 |0|900|0|0|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectrum related to the plasma after the TMA dose shows a broad range of emissions. Such a range usually denoted emission from molecular species.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A hydrogen line can be found at 660 nm.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The saturated plasma exposure time is 2 s. At this time there is no more intensity measured of ligand related species.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ligands are composed of C and H atoms.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_62_fig_4.jpg","caption":"FIG. 4. (Color online) (a) Emission spectrum from a steady-state $\\mathrm{O}_2$ plasma and a spectrum of an $\\mathrm{O}_2$ plasma exposure during a plasma-assisted ALD cycle of $\\mathrm{Ta}_2\\mathrm{O}_5$ . The latter spectrum was recorded after a $\\mathrm{Ta}[\\mathrm{N}(\\mathrm{CH}_3)_2]_5$ dosing step during the first $200~\\mathrm{ms}$ of plasma exposure. (b) Time-resolved intensities of emission lines of plasma species and reaction products after a $\\mathrm{Ta}[\\mathrm{N}(\\mathrm{CH}_3)_2]_5$ dose had preceded. The plasma was ignited at time $t = \\sim 0.5\\mathrm{s}$ .","id":"test/atomic-layer-deposition/experimental-usecase/62/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/62/fig_4","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/Mackus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"62","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":637,"height":1069,"image_format":"jpeg","image_sha256":"ee9e00618fb8815c16194c21c8a4e8bcf6d640c3c64c53649c942fcd566d6587","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":631,"height":524},{"panel_id":"b","x":8,"y":528,"width":624,"height":535}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a spectral intensity profile against wavelength, of an O2 plasma in saturation and shortly after a precursor dose.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the time-dependent intensity changes of specific molecular emissions (O, H, CO, CN) over time.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | Intensity (a.u.) O2 plasma |Intensity (a.u.) O2 plasma after ALD cycle |\\n|---|---|---|\\n| 360-400 | - | CN range |\\n| 400-750 | - | CO range |\\n| 660 | - | H alpha peak |\\n| 780 | O peak |O peak |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Intensity (a.u.) O |Intensity (a.u.) H |Intensity (a.u.) CO |Intensity (a.u.) CN |\\n|----------|------------------|----------|----------|------------------|\\n| 0 | 0 |0 |0 |0 |\\n| 0.5 | 0 |0 |0 |0 |\\n| 1 | 200 | 200 |100|100|\\n| 1.5 | 250 |130|80|80|\\n| 2 | 260 |80|50|50|\\n| 2.5 | 260 |50|50|20|\\n| 3 | 260 |50|50|20|\\n| 3.5 | 260 |50|50|20|\\n| 4 | 260 |50|50|20|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The used plasma is made of oxygen, but the emission also shows H, C and N species, so it it likely that these come from the ligands.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, there is overlap.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The intensity of the emission of species cannot be compared to others, if the goal is to determine the densities. With OES only the presence of species can be determined.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2.5 s would be far enough in saturation.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_62_fig_5.jpg","caption":"FIG. 5. (Color online) (a) Emission spectrum from a steady-state $\\mathrm{H}_2$ plasma and a spectrum of a $\\mathrm{H}_2$ plasma exposure during a plasma-assisted ALD cycle of $\\mathrm{TaN}$ . The latter spectrum was recorded after a $\\mathrm{Ta}[\\mathrm{N}(\\mathrm{CH}_3)_2]_5$ dosing step during the first $200~\\mathrm{ms}$ of plasma exposure. The inset shows the emission spectra around $388~\\mathrm{nm}$ in more detail. (b) Time-resolved emission intensity at $388~\\mathrm{nm}$ during the plasma exposure step for an ALD cycle with and without $\\mathrm{Ta}[\\mathrm{N}(\\mathrm{CH}_3)_2]_5$ dosing step. The plasma was ignited at time $t = \\sim 0.0\\mathrm{s}$ .","id":"test/atomic-layer-deposition/experimental-usecase/62/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/62/fig_5","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/Mackus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"62","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":622,"height":1047,"image_format":"jpeg","image_sha256":"e86d867eef91644e3005982eba80b8e3ae5ec30fa2fdbbc76e0348f70bfdbe8c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":616,"height":526},{"panel_id":"b","x":0,"y":544,"width":624,"height":504}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a spectral intensity plot with two curves representing H2 plasma and an H2 plasma in an ALD cycle.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays a line chart comparing the intensity at 388 nm of an H2 plasma and an H2 plasma in an ALD cycle over time.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | Intensity (a.u.) H2 plasma|Intensity (a.u.) H2 plasma after ALD cycle|\\n|---|---|---|\\n| 388 | peak | peak |\\n| 500 | peaks |peaks |\\n| 600 | peaks |peaks |\\n| 660 | H peak | H peak |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Intensity (a.u.) H2 plasma|Intensity (a.u.) H2 plasma after ALD cycle|\\n|---|---|---|\\n| 0 | 0 |0|\\n|0.5|112|87|\\n| 1 | 100 |87|\\n| 2 | 94 |87|\\n| 3 | 90 |87|\\n| 4 | 87|87|\\n| 5 |87|87|\\n| 6 |87|87|\\n| 7 | 87|87|\\n| 8 | 87|87|\\n| 9 | 87|87|\\n| 10 | 87|87|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems that there is major overlap between all the species present between the two plasmas, so not a lot of different species are incorporated.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The highest intensity is measured at 660 nm.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The saturation time is 4 s.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No the intensity will not go to zero if the plasma is running there will always be the background of the peak in the H2 plasma itself.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG2_b.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG2_b","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG2_b","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG2_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG2_b.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"b","first_classification_label":"multi spectra chart","caption_source":"not_found"},"width":686,"height":550,"image_format":"jpeg","image_sha256":"1ac48fed2b90460dd2877c9b718df676d50766f38eea892e4ca806686b97c4d9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":0,"width":686,"height":550}],"summarization":"[{\"panel_id\":\"b\",\"text\":\"This figure presents Raman spectra of a material subjected to increasing durations of plasma exposure at a pressure of 850 mTorr. The x-axis shows the Raman shift (cm⁻¹), while the y-axis shows normalised intensity. Characteristic vibrational modes such as B₂g and Ag are labeled, with several peaks attributable to Al₂O₃. As exposure time increases (from 5 s to 80 s), the peak intensities for key vibrational modes gradually increase, particularly for Ag modes, indicating structural evolution or surface changes in the sample. The B₂g peak near 200 cm⁻¹ remains dominant, but secondary peaks become more prominent with longer exposure times, suggesting increasing crystallinity or improved signal collection as surface chemistry changes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Raman shift (cm⁻¹) | Intensity @ 5 s | 9 s | 15 s | 20 s | 30 s | 45 s | 60 s | 80 s |\\n|--------------------|----------------|------|------|------|------|------|------|------|\\n| 150 (Ag) | 0.20 | 0.22 | 0.25 | 0.28 | 0.32 | 0.35 | 0.38 | 0.40 |\\n| 200 (B₂g) | 1.00 | 1.00 | 0.98 | 0.97 | 0.95 | 0.93 | 0.90 | 0.88 |\\n| 250 (Ag) | 0.60 | 0.62 | 0.65 | 0.68 | 0.70 | 0.73 | 0.76 | 0.78 |\\n| 350 (B₂g) | 0.45 | 0.48 | 0.50 | 0.52 | 0.55 | 0.58 | 0.60 | 0.63 |\\n| 500 (Al₂O₃) | 0.20 | 0.22 | 0.23 | 0.24 | 0.26 | 0.28 | 0.30 | 0.33 |\\n| 750 (Al₂O₃) | 0.10 | 0.11 | 0.12 | 0.13 | 0.14 | 0.15 | 0.16 | 0.17 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With increasing plasma exposure time, the intensity of several vibrational peaks, particularly those associated with Ag and B₂g modes, steadily increases. This suggests that prolonged exposure enhances the structural order or surface modifications that amplify Raman-active vibrations. Notably, the B₂g peak near 200 cm⁻¹ remains consistently strong across all conditions, while other peaks such as those near 250, 350, and 500 cm⁻¹ gradually grow in intensity. This trend indicates a cumulative effect of plasma treatment on material structure, possibly linked to crystallinity or compositional changes.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"B₂g\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"5 s, 9 s, 15 s, 20 s, 30 s, 45 s, 60 s, 80 s\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG5_a.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG5_a","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG5_a","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG5_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG5_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"not_found"},"width":639,"height":500,"image_format":"jpeg","image_sha256":"f19b0572718bfb83081ae60a0a5f45e0bd38df45ad259b449ee4bd1c7d832079","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":639,"height":500}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This Raman spectra chart illustrates the vibrational modes of materials exposed to varying oxygen flow fractions through inductively coupled plasma (ICP). The three overlaid spectra correspond to O₂ flow fractions of 0.06, 0.29, and 0.53, with key Raman-active modes labeled along the spectral axis. Peaks corresponding to B₂g and A_g modes, as well as Al₂O₃, are clearly visible and consistent across all conditions, indicating that the overall structure remains stable across varying plasma environments. Minor differences in intensity at select peaks suggest possible changes in crystallinity or defect density influenced by oxygen content during deposition or treatment\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Raman Shift (cm⁻¹) | Normalized Intensity (a.u.) |\\n|--------------------|-----------------------------|\\n| 100 | 0.05 |\\n| 200 | 1.00 |\\n| 300 | 0.60 |\\n| 400 | 0.40 |\\n| 500 | 0.55 |\\n| 600 | 0.60 |\\n| 700 | 0.50 |\\n| 800 | 0.45 |\\n| 900 | 0.50 |\\n| 1000 | 0.60 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"increasing the O₂ flow fraction from 0.06 to 0.53 does not significantly alter the positions of the Raman peaks, indicating that the chemical structure and vibrational modes remain largely consistent. However, subtle variations in peak intensities are observed. These changes suggest minor modifications in the material’s crystallinity or defect states, likely due to different oxidation conditions during treatment. For example, a higher flow fraction might reduce the presence of carbon-related defects or enhance oxide formation, subtly affecting Raman-active modes without drastically shifting peak positions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"B₂g, A_g, and Al₂O₃ modes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"O₂ flow fraction, ICP 0.06, 0.29, 0.53\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG7_a.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG7_a","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG7_a","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG7_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG7_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"not_found"},"width":661,"height":556,"image_format":"jpeg","image_sha256":"a4a729101d41106b38dc582ea2d85a07d5f1945ffdf81a39e0d07b0ef89b4b6b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":661,"height":556}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents Raman spectra collected at varying pressures ranging from 850 mTorr to 5000 mTorr. The spectra show multiple sharp peaks corresponding to vibrational modes such as B₁g and Ag, as well as peaks attributed to Al₂O₃. As pressure increases, the overall spectral intensity decreases slightly, and peak shapes remain consistent, indicating preserved crystalline character. These pressure-dependent spectra are used to assess the effect of processing conditions on structural order.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Raman shift (cm⁻¹) | Intensity (a.u.) |\\n|---|---|\\n| 100 | 5000 mTorr |\\n| 200 | 3700 mTorr |\\n| 300 | 2500 mTorr |\\n| 400 | 1600 mTorr |\\n| 500 | 850 mTorr |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Raman spectra recorded at different pressures allow the researchers to monitor changes in the material's structural order or phase. Peaks corresponding to specific vibrational modes like B₁g and Ag indicate the crystalline nature of the sample. By comparing the intensity and shape of these peaks across pressures, one can assess whether the material undergoes structural degradation or enhancement. For example, consistent peak positions and intensities suggest stable bonding environments, while changes may imply amorphisation or phase transitions due to pressure-dependent processing\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Spectral inetensity decreases with increasing pressure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Identifies vibrational modes, Detects structural changes, Enables non-destructive composition analysis, Links processing to film quality\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG7_b.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG7_b","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG7_b","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG7_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG7_b.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"b","first_classification_label":"multi spectra chart","caption_source":"not_found"},"width":683,"height":556,"image_format":"jpeg","image_sha256":"d650ebdba2e572cd09792f25ac14d4219460a692f3cf9a81896c35565dc960d9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":0,"width":683,"height":556}],"summarization":"[{\"panel_id\":\"b\",\"text\":\"The Raman spectra compare vibrational modes observed under inductively and capacitively coupled plasma conditions at 5000 mTorr. Notably, the capacitively coupled case (purple line) shows substantially higher intensity peaks across the full spectral range, especially at positions labeled Ag, B₁g, and Al₂O₃. These peaks are associated with specific phonon modes and bonding environments, and their enhancement under capacitively coupled conditions suggests improved crystalline ordering or a higher density of Raman-active bonds. The inductively coupled plasma yields comparatively weak Raman signals, indicating either a more amorphous structure or a lower scattering cross-section in this condition.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Raman shift (cm⁻¹) | Intensity - Inductive (a.u.) | Intensity - Capacitive (a.u.) |\\n|-------------------|------------------------------|-------------------------------|\\n| 100 | 0.00 | 0.00 |\\n| 150 | 0.05 | 0.30 |\\n| 200 | 0.08 | 0.60 |\\n| 250 | 0.06 | 0.45 |\\n| 300 | 0.05 | 0.40 |\\n| 350 | 0.04 | 0.38 |\\n| 400 | 0.03 | 0.35 |\\n| 450 | 0.03 | 0.32 |\\n| 500 | 0.02 | 0.28 |\\n| 600 | 0.02 | 0.24 |\\n| 700 | 0.01 | 0.20 |\\n| 800 | 0.01 | 0.15 |\\n| 900 | 0.00 | 0.10 |\\n| 1000 | 0.00 | 0.05 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The capacitively coupled condition results in much stronger Raman peaks across the spectrum, particularly at positions corresponding to Ag and B₁g modes. This suggests a higher degree of crystallinity or more pronounced vibrational coherence in the material. In contrast, the inductively coupled condition shows significantly lower intensities, indicating a more amorphous or disordered structure. This comparison highlights how the type of plasma coupling directly influences material structure and vibrational activity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The B₁g peak near 200 cm⁻¹\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Higher crystallinity, Stronger phonon activity, Improved ordering, Suitable for optoelectronics\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_33_figure_1.jpg","caption":"Figure 1. XPS spectra of the core level C 1s of a) pristine graphene (after transfer to $\\mathrm{SiO}_2$ ), b) graphene after a $30\\mathrm{s}\\mathrm{O}_2$ plasma treatment, and c) graphene after a $35\\mathrm{s}\\mathrm{H}_2$ plasma treatment at a pressure of $50\\mathrm{mTorr}$ and a plasma power of $100\\mathrm{W}$ .","id":"test/atomic-layer-deposition/simulation-usecase/33/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/33/figure_1","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":622,"height":1295,"image_format":"jpeg","image_sha256":"e6e5c83b40a7663c8ed74f4aef8b02b58c7c071548f72864eb9e2264f6aca4c4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":7,"width":626,"height":436},{"panel_id":"b","x":9,"y":444,"width":613,"height":426},{"panel_id":"c","x":9,"y":864,"width":606,"height":426}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the binding energy spectrum of pristine graphene, with contributions from sp², C-O, plasmon 1, and plasmon 2.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the binding energy spectrum of material treated with 30 seconds of O₂ plasma, with contributions from sp², sp³, C-O, and C=O.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the binding energy spectrum of material treated with 35 seconds of H₂ plasma, with contributions from sp², sp³, C-O, and C=O.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy, eV | Component | Peak Intensity (normalized) |\\n|---|---|---|\\n| 284.4 | sp² | 0.88 |\\n| 285.5 | C-O | 0.05 |\\n| 286.5 | Plasmon 1 | 0.08 |\\n| 290.5 | Plasmon 2 | 0.02 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy, eV | Component | Peak Intensity (normalized) |\\n|---|---|---|\\n| 284.4 | sp² | 0.55 |\\n| 285.0 | sp³ | 0.55 |\\n| 286.2 | C-O | 0.35 |\\n| 287.5 | C=O | 0.22 |\"},{\"panel_id\":\"c\",\"text\":\"| Binding Energy, eV | Component | Peak Intensity (normalized) |\\n|---|---|---|\\n| 284.4 | sp² | 0.60 |\\n| 285.0 | sp³ | 0.58 |\\n| 286.2 | C-O | 0.38 |\\n| 287.5 | C=O | 0.08 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The red curve is the fitted model of the measured XPS C 1s spectrum, constructed from the colored component peaks plus background.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After O2 plasma, the C O contribution increases, an sp3 component appears near 284.6 eV, and a C=O component appears near 289.0 eV, while the plasmon loss features seen in pristine graphene are no longer observed. After H2 plasma, the dominant change is a strong increase in sp3 bonding with a corresponding decrease in sp2 bonding, and there is also an increase in C O signal.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"H2 plasma: the spectrum shows strong sp3 formation attributed to hydrogenation, which the paper links to reversibility upon subsequent processing and annealing. \\n\\nO2 plasma: the spectrum shows added oxygen containing bonding, including C=O, consistent with more permanent chemical modification and loss of plasmon features, which the paper associates with less reversible changes.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increased sp3 contribution indicates that part of the graphene basal plane has been converted from sp2 bonding to sp3 like bonding due to plasma functionalization. For O2 plasma this coincides with oxygen containing groups such as C O and C=O, consistent with chemical modification and disruption of the pristine sp2 network. For H2 plasma, the paper attributes the sp3 increase primarily to hydrogenation, which is not directly visible as C H in XPS but is consistent with the observed sp2 to sp3 shift.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_34_figure_10.jpg","caption":"Figure 10. DFT/vdW-DF2 level orbital-projected density of states (DOS) per atom of free-standing and Pt(111)-contacted a) pristine graphene (PG), b) graphene oxide (GO), and c) hydrogenated graphene (SSHG). The model systems used are depicted in the inset of each graph (Pt: light gray, C: dark gray, H: white, O: red). The Fermi level of each system is set to zero (dashed vertical line). Each of the DOS curves is averaged over all atoms contributing to the individual DOS plot (e.g., C, O, and/or H, see legends for actual compositions). The gray shaded areas show the sum of contributions from the individual atomic orbital types.","id":"test/atomic-layer-deposition/simulation-usecase/34/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/34/figure_10","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"},{"panel_id":"e","label":"multi spectra chart"},{"panel_id":"f","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1164,"height":1183,"image_format":"jpeg","image_sha256":"9655f4e9191d9b74303d47573d04dbccd299a8b5182283853d0887ae21b23574","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":5,"width":556,"height":410},{"panel_id":"b","x":565,"y":8,"width":568,"height":410},{"panel_id":"c","x":2,"y":433,"width":552,"height":370},{"panel_id":"d","x":600,"y":441,"width":522,"height":361},{"panel_id":"e","x":6,"y":817,"width":554,"height":359},{"panel_id":"f","x":596,"y":825,"width":522,"height":355}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_34_figure_12.jpg","caption":"Figure 12. GGA/vdW-DF2 level atom-projected DOS of PG and SSHG that are a) edge-contacted or b) top-contacted to Pt metal. Insets show the models used for the calculations. Contributions by atomic orbitals of C, H, and Pt are given by diverse colors. Pt–d orbital contributions are not shown for clarity. See Figure 8 caption for other details.","id":"test/atomic-layer-deposition/simulation-usecase/34/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/34/figure_12","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1337,"height":925,"image_format":"jpeg","image_sha256":"f84229a5dd8a7671bf500c1c05c1c39c01ffa1b7362a539333b8959165b8a3e3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":8,"width":676,"height":475},{"panel_id":"b","x":716,"y":6,"width":608,"height":472},{"panel_id":"c","x":10,"y":498,"width":666,"height":418},{"panel_id":"d","x":735,"y":502,"width":589,"height":418}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_34_figure_2.jpg","caption":"Figure 2. Raman spectra obtained after different plasma treatments for a) $\\mathsf{H}_{2}$ plasma treatments ranging from 2 to 8 min and b) $\\Omega_2$ plasma treatments from 1 to 5 min. The Raman spectrum of pristine graphene is also added as reference. The Raman spectra are normalized to the highest peak (D band at $1350cm^{-1}$ or 2D band at $2690cm^{-1}$ and are vertically offset for clarity.","id":"test/atomic-layer-deposition/simulation-usecase/34/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/34/figure_2","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":667,"height":1531,"image_format":"jpeg","image_sha256":"f529518e8c6ed947a8b33705cfe75187ad320f889b9b14616173737df953026b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":660,"height":512},{"panel_id":"b","x":2,"y":514,"width":662,"height":512},{"panel_id":"c","x":0,"y":1026,"width":664,"height":503}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the C 1s XPS spectrum of pristine graphene, with contributions from C sp², plasmon peaks, and C-O bonds.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the C 1s XPS spectrum of H₂ plasma treated graphene for 5 minutes, with contributions from C sp² and C sp³.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the C 1s XPS spectrum of O₂ plasma treated graphene for 5 minutes, with contributions from C sp², C sp³, C-O, and C=O.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Component | Binding Energy (eV) |\\n|---|---|\\n| C sp^2 | Peak at 284.5 |\\n| Plasmon 1 | Peak at 290 |\\n| Plasmon 2 | Peak at 293 |\\n| C-O | Peak at 286.5 |\"},{\"panel_id\":\"b\",\"text\":\"| Component | Binding Energy (eV) |\\n|---|---|\\n| C sp^2 | Peak at 284.5 |\\n| C sp^3 | Peak at 285 |\"},{\"panel_id\":\"c\",\"text\":\"| Component | Binding Energy (eV) |\\n|---|---|\\n| C sp^2 | Peak at 284.5 |\\n| C sp^3 | Peak at 285 |\\n| C-O | Peak at 286.5 |\\n| C=O | Peak at 289 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1) Pristine graphene, 2) H2-plasma treated graphene (5 min) and 3) O2-plasma treated graphene\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This may be related to residual polymer residue in the sample or surface groups present at defects/surface sites.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 23%.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Epoxy groups (C-O-C), hydroxyl groups (C-OH), carbonyl groups (C=O)\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_40_fig_3.jpg","caption":"Fig. 3. a) X-ray diffraction patterns and b) texture coefficients of $\\mathrm{ZnO}$ films deposited with different $\\mathbb{N}_2$ bubbling flows through DEZ, $f_{DEZ}$","id":"test/atomic-layer-deposition/simulation-usecase/40/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/40/fig_3","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/Viet Huong Nguyen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1387,"height":668,"image_format":"jpeg","image_sha256":"ca7bebd56f3ad9c7519c5060c2647bc3c4642d9328fc27ffb401fcdbc6185544","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":80,"y":17,"width":584,"height":586},{"panel_id":"b","x":719,"y":139,"width":30,"height":325}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This panel presents XRD patterns of ZnO films deposited by spatial ALD under different N₂ bubbling flows through DEZ. Increasing DEZ exposure leads to stronger and sharper diffraction peaks, indicating improved crystallinity, with high exposure favoring the ZnO (002) reflection, characteristic of c-axis–oriented growth.\"},{\"panel_id\":\"b\",\"text\":\"This panel shows texture coefficients for ZnO (002), (100), (101), and (110) planes as a function of DEZ bubbling flow. The (002) texture increases markedly at higher flows, while the (101) contribution decreases, demonstrating that precursor exposure directly controls preferred crystal orientation in SALD-grown ZnO films.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The enhancement of (002)-oriented growth at higher precursor exposure improves c-axis alignment, which is beneficial for applications requiring high electron mobility, piezoelectric response, and optical transparency. Controlled texture engineering through DEZ exposure in spatial ALD enables tailoring of ZnO film properties for optoelectronic devices, sensors, and transparent conductive coatings while maintaining low-temperature processing compatibility.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Increasing dominance of the ZnO (002) diffraction peak, Reduction of the ZnO (101) texture contribution, Enhanced crystallinity with sharper diffraction peaks, Exposure-dependent orientation competition among ZnO planes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ZnO (002) texture coefficient increases significantly at higher DEZ bubbling flows, becoming dominant above approximately 30 sccm.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_12_fig_1.jpg","caption":"FIG. 1. Difference infrared spectra collected at $250^{\\circ}\\mathrm{C}$ , in which a decrease in absorption corresponds to the removal of species, while an increase in absorption represents the formation of species. Graph (a) shows the broad absorbance region between 800 and $1100\\mathrm{~cm}^{-1}$ corresponding to $\\mathrm{Al} - \\mathrm{O}$ in the film. These spectra are taken after each $\\mathrm{SF}_6$ plasma/TMA ALE cycle and are referenced to the as-deposited $\\mathrm{Al}_2\\mathrm{O}_3$ spectrum taken prior to the $\\mathrm{Al}_2\\mathrm{O}_3$ cycles. Graph (b) shows the $\\mathrm{AlCH}_3$ absorbance peaks at 2900 and $2950\\mathrm{~cm}^{-1}$ . Spectra were recorded after each $\\mathrm{SF}_6$ plasma and TMA half-cycle and are referenced to the previous half-cycle.","id":"test/atomic-layer-etching/experimental-usecase/12/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/12/fig_1","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":602,"height":559,"image_format":"jpeg","image_sha256":"d99668497736a87434a6d230d86b5684f969a8ce122ef1c4f82d235aee28bc26","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":4,"width":318,"height":552},{"panel_id":"b","x":317,"y":9,"width":283,"height":550}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The spectral chart shows the infrared spectra collected at 250 °C, highlighting the broad absorbance region between 800 and 1100 cm⁻¹ corresponding to Al–O vibrations in the film. These spectra were recorded after each SF₆ plasma/TMA ALE cycle and referenced to the as-deposited Al₂O₃ spectrum taken prior to the ALE cycles. The figure displays absorbance spectra across the wavenumber range for cycles 1 through 6, showing changes in absorbance at specific wavenumbers.\"},{\"panel_id\":\"b\",\"text\":\"The spectral chart shows the Al–CH₃ absorbance peaks at 2900 and 3500 cm⁻¹. The spectra were recorded after each SF₆ plasma and TMA half-cycle and are referenced to the spectrum from the previous half-cycle. The figure compares the absorbance spectra for TMA-referenced to SF₆ plasma(blue line) and SF₆-plasma-referenced to TMA(red line) for cycles 2, 4, and 6. Sharp absorbance peaks were observed close to 2900 to 2950 cm⁻¹.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Cycle 1 | Cycle 2 | Cycle 3 | Cycle 4 | Cycle 5 | Cycle 6 |\\n|--------------------|---------|---------|---------|---------|---------|---------|\\n| 1000 | 0.002 | 0.0018 | 0.0016 | 0.0014 | 0.0012 | 0.0010 |\\n| 900 | 0.0018 | 0.0016 | 0.0014 | 0.0012 | 0.0010 | 0.0008 |\\n| 800 | 0.0016 | 0.0014 | 0.0012 | 0.0010 | 0.0008 | 0.0006 |\"},{\"panel_id\":\"b\",\"text\":\"| Wavenumber (cm⁻¹) | Cycle 2 (Blue) | Cycle 2 (Red) | Cycle 4 (Blue) | Cycle 4 (Red) | Cycle 6 (Blue) | Cycle 6 (Red) |\\n|--------------------|-----------------|---------------|-----------------|---------------|-----------------|---------------|\\n| 3000 | +0.005 | -0.005 | +0.005 | -0.005 | +0.005 | -0.005 |\\n| 2800 | +0.004 | -0.004 | +0.004 | -0.004 | +0.004 | -0.004 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"AlCH3 symmetric and asymmetric stretching modes after SF6 plasma and TMA half cycle are studied, as a funcion of the number of cycles (2,4, and 6).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SF6 plasma.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"These peaks correspond to the symmetric and asymmetric stretching modes of AlCH3 groups on the surface, which form after TMA dosing.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TMA methylates the surface of the film. It is indicated by the appearance of Al–CH₃ bands after the TMA step. These Al–CH₃ features are not present after the SF₆ plasma half-step, showing that the methyl species are not coming from the plasma exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Methyl-groups.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 2900 and 2950 cm^-1.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Sub-figure b shows how the absorbance has changed after SF6 exposure with a reference spectrum taken after TMA exposure (blue). The reverse is also shown in red. The baseline of these two difference spectra is marked by the dashed line. As the blue and red lines are almost perfect mirror images (relative to the dashed line), this tells us that SF6 and TMA successfully react to remove and form methyl surface groups during each half cycle respectively.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Following TMA dosing, AlCH3 surface species are observed as indicated by an increase in the CH3 absorbance peak. These methyl groups are thought to be\\nformed after removal of the fluorinated surface layer, allowing excess TMA to adsorb on the bulk Al2O3. After SF6 plasma exposure, a negative CH3 peak is observed, indicating the removal of surface methyl groups, which is attributed to ligand exchange reactions between methyl groups and fluorine atoms.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 250 °C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The data supports this because the absorbance peaks for Cycles 2, 4, and 6 are nearly identical in intensity and shape. This repeatability implies a constant \\\"Etch Per Cycle\\\" (EPC) without significant drift, allowing engineers to precisely control the total etch depth simply by counting the number of cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the TMA half-cycle (blue lines), positive absorbance peaks appear at 2900 and 2950 cm⁻¹, corresponding to AlCH₃ symmetric and asymmetric stretching modes, which indicates that TMA adsorbs onto the surface and methylates it. Conversely, during the SF₆ plasma half-cycle (red lines), these same peaks appear as negative features. This indicates the removal of the methyl groups introduced in the previous step, likely replaced by fluorine atoms from the plasma radicals, consistent with a ligand-exchange mechanism.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"These peaks correspond to the symmetric and asymmetric stretching vibrations of methyl groups (–CH₃) bonded to aluminum (AlCH₃ surface species).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TMA exposure introduces surface-bound methyl ligands through ligand-exchange reactions with fluorinated aluminum sites. These –CH₃ groups are transient and serve as intermediates rather than permanent surface species. The following SF₆ plasma step removes the methyl ligands, returning the C–H region to baseline and regenerating a fluorinated surface. This reversible behavior indicates clean, self-limiting surface chemistry without carbon accumulation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It indicates complete ligand removal each cycle, preventing carbon buildup and enabling repeatable ALE behavior.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The specific wavenumber is related to -OH groups. It could indicate the adsorption of TMA on these groups.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The SF6 plasma removes surface methyl groups resulting in a decrease of the AlCH3 peaks due to ligand exchange reactions with fluorine atoms, Formation of Al–F bonds and surface fluorination further suppress Al–CH₃ related vibrational features in the FTIR spectra.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"6 cycles\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Al-O absorbance band decreses with increasing the number of cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Al-O absorbance decreases for increasing cycle number indicating that there is less Al2O3, meaning there is etching.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems that the wavenumber range around 850 cm-1 does not have the same fluctuation each cycle, indicating that there is a difference.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, this could be as not every vibrations is as likely to occur, which means that differences in absorption for different wavenumbers do not have to be the same.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Al–O absorbance decreases monotonically with increasing cycle number.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The absorbance of the Al–O band, located between 800 and 1100 cm⁻¹, systematically decreases with each subsequent ALE cycle, as indicated by the arrow labeled \\\"Increasing Cycles.\\\" Since infrared absorbance in this region is proportional to the amount of Al–O bonds present, this reduction signifies the layer-by-layer removal of the Al₂O₃ film, confirming that the process is indeed etching the material.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Initial Al₂O₃ surface (reference, 0 cycles).\\n\\nSF₆ plasma converts surface Al-O to Al-F, reducing Al-O absorbance.\\n\\nTMA reacts with Al-F, releasing volatile products and potentially leaving some Al-CH₃.\\n\\nRepeated cycles progressively alter the near-surface oxide structure, changing the Al-O absorbance signature as seen in the growing, shifted peaks.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The shifting peak indicates a change in the local bonding environment of aluminum and oxygen. The initial Al₂O₃ has a specific crystalline or amorphous structure. The cyclic fluorination and ligand exchange likely create a modified, possibly disordered or fluorine-incorporated, oxyfluoride surface layer (AlOₓFᵧ), which has different vibrational energies than pure Al₂O₃. This maps directly to a change in the material's etch susceptibility.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The decrease in absorbance in this region maps directly to the breaking of Al–O bonds and the subsequent reduction in film thickness, confirming that bulk material is being removed layer-by-layer.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The intensity of the absorbance decreases with increasing cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The absorbance decreases with the increasing number of ALE cycles, which corresponds to the removal of material after each ALE cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SF6.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Al–O band shows a progressive decrease in absorbance from cycle 1 to cycle 6. This indicates a reduction in Al–O–containing material relative to the initial film. The monotonic decline is consistent with cumulative etching of Al₂O₃ over successive cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The absorbance increases with increasing cycle number, particularly in the Al–O related region, indicating progressive accumulation or modification of surface species during repeated cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Wavenumber (cm⁻¹).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, A decrease in absorption corresponds to the removal of species from the Al2O3 surface, such as the Al–O bonds removed during each SF6 plasma/TMA ALE cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In Figure (a), spectra are referenced to the as-deposited Al2O3 film before ALE cycles. In figure (b), spectra are referenced to the previous half-cycle to highlight changes after each TMA or SF6 plasma exposure.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The Al–O related band region, The C–H stretching region\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_1.jpg","caption":"Figure 1. FTIR spectra during AlN ALD with TDMAA and $\\mathrm{NH}_3$ as the reactants at $400^{\\circ}\\mathrm{C}$ after 40, 80, 120, and 160 ALD cycles.","id":"test/atomic-layer-etching/experimental-usecase/20/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_1","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":664,"height":544,"image_format":"jpeg","image_sha256":"b7ee801af61cfbcc0f2786df46d56dada64d6335b0d4ab436dae2af8679b9906","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":8,"width":658,"height":536}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays the absorbance spectra of AlN ALD samples prepared using TDMAA & NH₃ at 400°C, with varying cycles (40, 80, 120, and 160).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | 160 cycles | 120 cycles | 80 cycles | 40 cycles |\\n|---|---|---|---|---|\\n| 1400 | - | - | - | - |\\n| 1200 | - | - | - | - |\\n| 1000 | peak at 1880 cm-1 | peak at 1880 cm-1 | peak at 1880 cm-1 | peak at 1880 cm-1 |\\n| 800 | - | - | - | - |\\n| 600 | peak at 645 cm-1| peak at 645 cm-1 | peak at 645 cm-1 | peak at 645 cm-1 |\\n| 400 | - | - | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After 40 cycles of TDMAA and NH3, then at 80, 120 and 160.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of TDMAA and NH3 increases, so does the intensity of the absorption at 645 cm-1.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After 40 cycles of TDMAA and NH3 the peak intensity is the lowest.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the deposition cycle increases, more molecules are deposited onto the surface. Consequently, more molecules can absorb energy at different wavenumber, which increase the peak intensity.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_10.jpg","caption":"Figure 10. XPS spectra in the Al 2p region after (a) $\\mathrm{XeF}_2$ exposure and (b) $\\mathrm{BCl}_3$ exposure during thermal AlN ALE.","id":"test/atomic-layer-etching/experimental-usecase/20/figure_10","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_10","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":661,"height":597,"image_format":"jpeg","image_sha256":"f40bc52458f8e78b60e5cb7e175fad9bfb790411ef512b2742c944ea20821d7e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":658,"height":279},{"panel_id":"b","x":1,"y":285,"width":658,"height":308}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the spectral response of Al-N after XeF2 treatment, with a fitted curve overlaid. Also, Al-N bond is highlighted at 73.6 eV.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the spectral response of Al-F after BCl3 treatment, with a fitted curve overlaid. Also, Al-F bond is highlighted at 77.0 eV.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| B. E. (eV) | Counts |\\n| --- | --- |\\n| 85 | - |\\n| 80 | peak at 77 eV, 78 eV|\\n| 75 | peak at 74 eV |\\n| 70 | peak at 73 eV |\"},{\"panel_id\":\"b\",\"text\":\"| B. E. (eV) | Counts |\\n| --- | --- |\\n| 85 | - |\\n| 80 | - |\\n| 75 | - |\\n| 70 | peak at 73 eV |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The XPS technique is used to study the chemical state of the Al on the AlN surface during the ALE cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After XeF2 exposure, 4 species are present on the surface.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The subfigure b, where the AlN peak can be observed at 73.6 eV.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Exposure to BCl3 results in the removal of AlF3 from the surface, leaving only AlN.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_2.jpg","caption":"Figure 2. FTIR spectra during thermal AlN ALE with HF and $\\mathrm{BCl}_3$ as the reactants at $350^{\\circ}\\mathrm{C}$ after various numbers of ALE cycles.","id":"test/atomic-layer-etching/experimental-usecase/20/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_2","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":661,"height":447,"image_format":"jpeg","image_sha256":"bbbd9368968ddeee87649e9958aba9ee32633bdb559fbad5b9e2f34b75e294ea","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":659,"height":441}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the absorbance spectra of AlN ALE samples prepared using HF & BCl₃ at 350°C, with different number of cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | 1 cycle | 3 cycles | 12 cycles | 15 cycles | 27 cycles |\\n|------------------|------------|------------|------------|------------|------------|\\n| 1400 | - | - | - | - | - |\\n| 1200 | - | - | - | - | - |\\n| 1000 | - | - | - | - | - |\\n| 800 | - | - | - | - | - |\\n| 600 | - | peak at 650 | peak at 650 | peak at 650 | peak at 650 |\\n| 400 | - | - | - | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"FTIR are measured at least for 1, 3, 12, 15, and 27 ALE cycle with HF and BCl3.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of cycles increases, so does the absorbance intensity, reaching more natives values.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After one cycle of HF and BCl3, there is still no peak at 650 cm-1.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It could be caused by some BN formation.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_3.jpg","caption":"Figure 3. FTIR difference spectra after (a) HF exposure and (b) $\\mathrm{BCl}_3$ exposure during the 10th cycle of thermal AlN ALE at $350^{\\circ}\\mathrm{C}$ . Each spectrum is referenced to the spectrum after the previous exposure.","id":"test/atomic-layer-etching/experimental-usecase/20/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_3","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":667,"height":525,"image_format":"jpeg","image_sha256":"5590ff6346845e70b16bd24c70a58b00cff554eb7d2643ea92c26d6a815f81f2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":5,"width":662,"height":517}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays infrared absorption spectra for two samples labeled as HF-BCl₃ and BCl3-HF, at 350°C during the 10th cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | HF-BCl3 | BCl3-HF |\\n| --- | --- | --- |\\n| 1750 | - | - |\\n| 1500 | - | - |\\n| 1250 | B-N | B-N |\\n| 1000 | - | - |\\n| 750 | Al-N | Al-F |\\n| 500 | - | Al-F |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Changes that occur ruing each exposure of the reactant can be observed through the vibrational modes at different wavenumber values.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Below 750 cm-1, Al-N and Al-f can be observed.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The absorbance spectra of BCl3 exposure show a positive peak related to the formation of the B-N bond at around 1250 cm-1.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This is due to the overlap between Al-N and Al-F.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_10.jpg","caption":"Fig. 10. Mass spectra from $m / z$ 235 to 263 showing ion signal intensities for Co $(\\mathrm{acac})_2$ etch product during Hacac exposures on (a) CoO and (b) $\\mathrm{Co_3O_4}$ powders at $250^{\\circ}C$ Largest ion signals are observed for $\\mathrm{Co(acac)}_{2}^{+}$ and Co $(\\mathrm{acac})(\\mathrm{C_4H_4O_2})^+$","id":"test/atomic-layer-etching/experimental-usecase/21/fig_10","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_10","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":670,"height":609,"image_format":"jpeg","image_sha256":"0a7d81cb3fc20a05de1767278633fa2ebd3015507b8ae374e3895949b7d9ee0b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":664,"height":605}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays mass-to-charge ratio (m/z) on the x-axis and intensity in arbitrary units on the y-axis for Co3O3 and CoO at 250 °C. It shows peaks corresponding to various chemical species at specific m/z values.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| m/z | Co3O4 | CoO |\\n| --- | --- | --- |\\n| 236 | peak at 239 | peak at 239 |\\n| 240 | peak at 242, 243 | peak at 242, 243 |\\n| 244 | - | - |\\n| 248 | peak at 250 | - |\\n| 252 | peak at 252 | peak at 252 |\\n| 256 | peak at 257, 258 | peak at 257, 258 |\\n| 260 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows the mass spectra from m/z between 235 to 263 for Co3O4 and CoO at 150 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The peak intensity changes with the m/z ratio, but the most significant difference is due to the sample. Co3O4 shows higher intensity peaks compared to CoO.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The highest peak is shown at 275 and corresponds to the Co(acac)2+ species.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It can be useful for identifying the species involved in the reaction.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_3_figure_3.jpg","caption":"Figure 3. XPS data of Mo, S, and Cl on the $\\mathrm{MoS_2}$ surface after Cl-radical adsorption and during $\\mathrm{Ar^{+}}$ -ion desorption of $\\mathrm{MoS_2}$ ALE. (a) XPS data of the pristine bilayer $\\mathrm{MoS_2}$ before and after Cl-radical adsorption. (b) XPS data of Cl before/after Cl-radical adsorption and after the $\\mathrm{Ar^{+}}$ -ion exposure time of $0 - 200\\mathrm{s}$ XPS data of Mo and S after the $\\mathrm{Ar^{+}}$ -ion exposure of the Cl-adsorbed bilayer $\\mathrm{MoS_2}$ for (c) 0, 15, 30 s, (d) 30, 45, 60 s, (e) 60, 90, $120~\\mathrm{s},$ and (f) $120,200\\mathrm{s},$ and pristine bilayer $\\mathrm{MoS_2}$","id":"test/atomic-layer-etching/experimental-usecase/3/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/3/figure_3","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"},{"panel_id":"e","label":"multi spectra chart"},{"panel_id":"f","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/Atomic Layer Etching Mechanism of MoS2 for Nanodevices.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1380,"height":755,"image_format":"jpeg","image_sha256":"1aa6b72dfa56e12fb3c257da44097463184b599b13654489a7f3d15df55be2c3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":0,"width":449,"height":370},{"panel_id":"b","x":470,"y":11,"width":440,"height":360},{"panel_id":"c","x":921,"y":0,"width":458,"height":373},{"panel_id":"d","x":9,"y":393,"width":447,"height":359},{"panel_id":"e","x":469,"y":393,"width":452,"height":359},{"panel_id":"f","x":933,"y":393,"width":446,"height":361}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows XPS spectra of Mo 3d // S 2p for pristine bilayer and after Cl adsorption.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays XPS spectra of Cl 2p for pristine bilayer and various Ar exposure times.\"},{\"panel_id\":\"c\",\"text\":\"The figure presents XPS spectra of Mo 3d // S 2p after Cl adsorption and Ar exposure times.\"},{\"panel_id\":\"d\",\"text\":\"The figure shows XPS spectra of Mo 3d // S 2p after several Ar exposure times.\"},{\"panel_id\":\"e\",\"text\":\"The figure displays XPS spectra of Mo 3d // S 2p after several Ar exposure times.\"},{\"panel_id\":\"f\",\"text\":\"The figure presents XPS spectra of Mo 3d // S 2p after Ar exposure times and for a pristine bilayer.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding energy (eV) | Intensity (a.u.) |\\n|---|---|\\n| 233 | 3d3/2 |\\n| 229 | 3d5/2 |\\n| 227 | S-Mo-S |\\n| 163 | 2p1/2 |\\n| 162 | 2p3/2 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding energy (eV) | Intensity (a.u.) |\\n|---|---|\\n| 204 | 0 |\\n| 201 | 2p1/2 |\\n| 200 | 2p3/2 |\\n| 198 | 0 |\\n| 164 | 0 |\\n| 162 | 0 |\"},{\"panel_id\":\"c\",\"text\":\"| Binding energy (eV) | Intensity (a.u.) |\\n|---|---|\\n| 234 | 3d3/2 |\\n| 229 | 3d5/2 |\\n| 227 | S-Mo-S |\\n| 163 | 2p1/2 |\\n| 162 | 2p3/2 |\"},{\"panel_id\":\"d\",\"text\":\"| Binding energy (eV) | Intensity (a.u.) |\\n|---|---|\\n| 234 | 3d3/2 |\\n| 229 | 3d5/2 |\\n| 227 | S-Mo-S |\\n| 163 | 2p1/2 |\\n| 162 | 2p3/2 |\"},{\"panel_id\":\"e\",\"text\":\"| Binding energy (eV) | Intensity (a.u.) |\\n|---|---|\\n| 234 | 3d3/2 |\\n| 229 | 3d5/2 |\\n| 227 | S-Mo-S |\\n| 163 | 2p1/2 |\\n| 162 | 2p3/2 |\"},{\"panel_id\":\"f\",\"text\":\"| Binding energy (eV) | Intensity (a.u.) |\\n|---|---|\\n| 234 | 3d3/2 |\\n| 229 | 3d5/2 |\\n| 227 | S-Mo-S |\\n| 163 | 2p1/2 |\\n| 162 | 2p3/2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This only happens slightly, however the S-Mo-S peak does seem to be removed more, indicating that the sulfur is no longer bonded to Mo.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sulfur peaks decrease whereas the molybdenum peaks remain constant, so the sulfur is selectively etched.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The intensities of a bilayer MoS2 are equal to those of a Monolayer, so the should converge back to the pristine one.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All peaks are equally removed by the argon plasma, so no this is not the case.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_35_fig_2.jpg","caption":"FIG. 2. Expected equilibrium species determined by thermodynamic modeling in the temperature range from 25 to $400^{\\circ}C$ for [a) and (e)] 1 mol $\\mathrm{TiO_2 / ZrO_2}$ and 1 mol $\\mathsf{WF}_6$ b and (f)] 0.75 mol $\\mathrm{TiO_2 / ZrO_2}$ and 1 mol $\\mathsf{BCl}_3,$ c and (g)] 0.5 mol $\\mathrm{TiO_2 / ZrO_2}$ and 1 mol $\\mathrm{SOCl}_2$ and [(d) and (h)] 1 mol $\\mathrm{TiO_2 / ZrO_2}$ and 1 mol $\\mathrm{TiCl_4}$","id":"test/atomic-layer-etching/experimental-usecase/35/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/35/fig_2","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"},{"panel_id":"e","label":"multi spectra chart"},{"panel_id":"f","label":"multi spectra chart"},{"panel_id":"g","label":"multi spectra chart"},{"panel_id":"h","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/Comparison of BCl3, TiCl4, and SOCl2 chlorinating agents for.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1022,"height":1550,"image_format":"jpeg","image_sha256":"95567307fba3f44ac9e671843e06166c8171a69f5f1b48dac17a0275dba01230","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":508,"height":391},{"panel_id":"b","x":2,"y":389,"width":507,"height":385},{"panel_id":"c","x":524,"y":2,"width":495,"height":392},{"panel_id":"d","x":7,"y":1154,"width":502,"height":388},{"panel_id":"e","x":529,"y":8,"width":488,"height":377},{"panel_id":"f","x":523,"y":387,"width":495,"height":388},{"panel_id":"g","x":7,"y":752,"width":509,"height":406},{"panel_id":"h","x":519,"y":1155,"width":498,"height":386}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Equilibrium concentration profiles for the TiO₂ + WF₆ system show that at lower temperatures TiF₄(s) and WO₃(s) are favored, while increasing temperature promotes the formation of volatile TiF₄(g) and WF₂O₂(g), indicating thermally activated fluorination and oxide conversion.\"},{\"panel_id\":\"b\",\"text\":\"In the TiO₂ + BCl₃ system, the equilibrium concentrations remain nearly constant over the temperature range, with stable formation of TiCl₄(g) and B₂O₃(s), suggesting limited temperature dependence and a less aggressive halogenation reaction.\"},{\"panel_id\":\"c\",\"text\":\"For the TiO₂ + SOCl₂ reaction, SO₂(g) and TiCl₄(g) dominate across the entire temperature range, indicating efficient chlorination of TiO₂ with gaseous byproduct formation and minimal solid residue evolution.\"},{\"panel_id\":\"d\",\"text\":\"The TiO₂ + TiCl₄ equilibrium shows no significant reaction progress with temperature, as TiO₂(s) and TiCl₄(g) remain stable, confirming the absence of a driving force for further chemical transformation in this system.\"},{\"panel_id\":\"e\",\"text\":\"In the ZrO₂ + WF₆ system, ZrF₄(s) and WO₃(s) are stable at low temperatures, while higher temperatures favor the formation of volatile WF₂O₂(g), demonstrating temperature-dependent fluorination behavior similar to TiO₂ but with different stability ranges.\"},{\"panel_id\":\"f\",\"text\":\"The ZrO₂ + BCl₃ equilibrium reveals a sharp transition from solid ZrCl₄(s) to gaseous ZrCl₄(g) with increasing temperature, indicating sublimation-driven volatility and strong temperature sensitivity of zirconium chlorides.\"},{\"panel_id\":\"g\",\"text\":\"For the ZrO₂ + SOCl₂ system, increasing temperature leads to the conversion of solid zirconium sulfate and chloride species into gaseous ZrCl₄ and SO₂, highlighting complex intermediate formation followed by volatile product dominance.\"},{\"panel_id\":\"h\",\"text\":\"In the ZrO₂ + TiCl₄ system, multiple solid intermediates such as ZrOCl₂(s) and Zr₂O₃Cl₂(s) appear at intermediate temperatures before stabilizing as ZrO₂(s), indicating competitive chlorination and oxygen exchange reactions\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature range | TiF4(s) | TiF4(g) | WO3(s) | WF6(g) | WF2O2(g) |\\n|-------------------|---------|---------|--------|--------|----------|\\n| Low T | High | 0 | High | Medium | 0 |\\n| Mid T | ↓ | ↑ | ↓ | ↓ | ↑ |\\n| High T | 0 | High | 0 | 0 | High |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature range | TiCl4(g) | B2O3(s) |\\n|-------------------|----------|---------|\\n| All T | High | Medium |\"},{\"panel_id\":\"c\",\"text\":\"| Temperature range | SO2(g) | TiCl4(g) |\\n|-------------------|--------|----------|\\n| All T | High | Medium |\"},{\"panel_id\":\"d\",\"text\":\"| Temperature range | TiCl4(g) | TiO2(s) |\\n|-------------------|----------|---------|\\n| All T | High | High |\"},{\"panel_id\":\"e\",\"text\":\"| Temperature range | ZrF4(s) | WO3(s) | WF6(g) | WF2O2(g) |\\n|-------------------|---------|--------|--------|----------|\\n| Low T | High | High | Medium | 0 |\\n| Mid T | ↓ | ↓ | ↓ | ↑ |\\n| High T | 0 | 0 | 0 | High |\"},{\"panel_id\":\"f\",\"text\":\"| Temperature range | ZrCl4(s) | ZrCl4(g) | B2O3(s) |\\n|-------------------|----------|----------|---------|\\n| Low T | High | 0 | Medium |\\n| Mid T | ↓ | ↑ | Medium |\\n| High T | 0 | High | Medium |\"},{\"panel_id\":\"g\",\"text\":\"| Temperature range | SOCl2(g) | SO2(g) | Zr(SO3)2(s) | ZrCl4(s) | ZrCl4(g) |\\n|-------------------|----------|--------|-------------|----------|----------|\\n| Low T | High | 0 | Medium | Medium | 0 |\\n| Mid T | ↓ | ↑ | ↓ | ↓ | ↑ |\\n| High T | 0 | High | 0 | 0 | Medium |\"},{\"panel_id\":\"h\",\"text\":\"| Temperature range | ZrOCl2(s) | TiCl4(g) | TiO2(s) | ZrO2(s) | Zr2O3Cl2(s) |\\n|-------------------|-----------|----------|---------|---------|-------------|\\n| Low T | High | Medium | Low | Low | Low |\\n| Mid T | ↓ | ↑ | Peak | ↑ | Peak |\\n| High T | 0 | High | 0 | High | 0 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The equilibrium plots show that SOCl₂ produces exclusively volatile products on TiO₂, making it the cleanest and most efficient chlorinating agent for TiO₂ ALE. In contrast, ZrO₂ requires higher temperatures and reacts best with BCl₃, which forms volatile ZrCl₄(g) at elevated temperatures. SOCl₂ performs poorly for ZrO₂ due to persistent nonvolatile sulfate intermediates. These differences directly guide the selection of optimal co-reactants for oxide-specific ALE processes.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the modeling clearly shows which reactions generate volatile chlorides or oxides and which form nonvolatile intermediates that could limit atomic layer etching.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Formation of volatile metal chlorides, Absence of stable solid intermediates, Temperature-dependent stability of fluorides and sulfates, Ability of co-reactants to convert fluorinated surfaces into volatile products\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SOCl₂ produces fully volatile products such as SO₂(g) and TiCl₄(g) with TiO₂, but forms nonvolatile sulfates (e.g., Zr(SO₄)₂(s)) with ZrO₂, explaining the strong contrast in etch behavior.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_35_fig_4.jpg","caption":"FIG. 4. Expected equilibrium species determined by thermodynamic modeling in the temperature range from 25 to $400^{\\circ}C$ for 1 mol $\\mathbb{W}\\mathbb{O}_3$ reacting with (a) $4 / 3\\text{mol}$ $\\mathbb{BC}\\mathbb{I}_3,$ (b) 1 mol $\\mathbb{T}\\mathbb{C}\\mathbb{I}_4,$ (c) 1 mol $\\mathrm{SOCl}_2,$ and for 1 mol $\\mathrm{ZrF_4}$ reacting with (d) $4 / 3\\text{mol}$ $\\mathbb{BC}\\mathbb{I}_3,$ (e) 1 mol $\\mathbb{T}\\mathbb{C}\\mathbb{I}_4,$ and (f) $2.4\\text{mol}$ $\\mathrm{SOCl}_2$","id":"test/atomic-layer-etching/experimental-usecase/35/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/35/fig_4","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"},{"panel_id":"e","label":"multi spectra chart"},{"panel_id":"f","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/Comparison of BCl3, TiCl4, and SOCl2 chlorinating agents for.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1067,"height":1231,"image_format":"jpeg","image_sha256":"791088618a4964caee3198514036a45f201d3a493b23e6b429833e4b49b744ca","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":10,"width":520,"height":410},{"panel_id":"b","x":1,"y":422,"width":523,"height":397},{"panel_id":"c","x":4,"y":821,"width":519,"height":406},{"panel_id":"d","x":543,"y":10,"width":525,"height":408},{"panel_id":"e","x":543,"y":422,"width":517,"height":401},{"panel_id":"f","x":544,"y":824,"width":520,"height":407}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"In the WO₃ + BCl₃ system, equilibrium concentrations indicate that WOCl₄(g) and B₂O₃(s) dominate at lower temperatures, while increasing temperature promotes the formation of volatile WO₂Cl₂(g), reflecting temperature-activated chlorination of tungsten oxide.\"},{\"panel_id\":\"b\",\"text\":\"For WO₃ + SOCl₂, SO₂(g) remains the dominant gaseous byproduct across the temperature range, while a transition from solid WO₂Cl₂(s) to gaseous WO₂Cl₂(g) occurs with increasing temperature, indicating enhanced volatility of tungsten chlorides.\"},{\"panel_id\":\"c\",\"text\":\"In the WO₃ + TiCl₄ system, multiple competing equilibria are observed, with TiCl₄(g), WO₃(s), TiO₂(s), and WO₂Cl₂(g/s) coexisting over different temperature ranges, demonstrating complex ligand exchange and oxygen transfer reactions.\"},{\"panel_id\":\"d\",\"text\":\"In the ZrF₄ + BCl₃ system, a sharp temperature-dependent transition from solid ZrCl₄(s) to gaseous ZrCl₄(g) is observed, while BF₃(g) remains stable, indicating efficient halogen exchange and volatility enhancement at elevated temperatures.\"},{\"panel_id\":\"e\",\"text\":\"For ZrF₄ + SOCl₂, equilibrium favors the formation of ZrCl₄(g) at higher temperatures, accompanied by stable gaseous byproducts such as SF₂Cl(g) and SO₂F₂(g), highlighting strong fluorine–chlorine exchange and sulfate formation pathways.\"},{\"panel_id\":\"f\",\"text\":\"In the ZrF₄ + TiCl₄ system, ZrF₄(s) and TiCl₄(g) remain largely unchanged over the temperature range, with only trace formation of TiF₄(g) and ZrCl₄(g), indicating minimal thermodynamic driving force for reaction between these species.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction System|Main Volatile Products|Main Solid Products|ALE Interpretation|\\n|----------------|----------------------|------------------|------------------|\\n|WO3 + BCl3|WOCl4(g) (high T)|B2O3(s)|Moderate/OK|\"},{\"panel_id\":\"b\",\"text\":\"| Reaction System|Main Volatile Products|Main Solid Products|ALE Interpretation|\\n|----------------|----------------------|------------------|------------------|\\n|WO3 + SOCl2|SO2(g), WO-chlorides|Very little solid|Excellent for TiO2|\"},{\"panel_id\":\"c\",\"text\":\"| Reaction System|Main Volatile Products|Main Solid Products|ALE Interpretation|\\n|----------------|----------------------|------------------|------------------|\\n|WO3 + TiCl4|Mixed chlorides (weak)|WO2Cl2(s), WOCl4(s)|Poor|\"},{\"panel_id\":\"d\",\"text\":\"| Reaction System|Main Volatile Products|Main Solid Products|ALE Interpretation|\\n|----------------|----------------------|------------------|------------------|\\n|ZrF4 + BCl3|ZrCl4(g) (high T)|B2F4(g)/minor solids|Best for ZrO2|\"},{\"panel_id\":\"e\",\"text\":\"| Reaction System|Main Volatile Products|Main Solid Products|ALE Interpretation|\\n|----------------|----------------------|------------------|------------------|\\n|ZrF4 + SOCl2|Some ZrCl4(g)|Sulfates (Zr(SO4)2, ZrOSO4)|Very poor|\"},{\"panel_id\":\"f\",\"text\":\"| Reaction System|Main Volatile Products|Main Solid Products|ALE Interpretation|\\n|----------------|----------------------|------------------|------------------|\\n|ZrF4 + TiCl4|Minimal|TiF4(s), ZrCl4(g) (low)|Weak|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The predicted product distributions show that SOCl₂ produces clean, volatile products when reacting with WO₃, making it the most efficient co-reactant for TiO₂ ALE. For ZrF₄, however, SOCl₂ forms nonvolatile sulfate residues, while BCl₃ can produce volatile ZrCl₄(g) at elevated temperatures, identifying BCl₃ as the most effective reagent for ZrO₂ ALE. TiCl₄ produces mixed or solid products in both systems, explaining its poor performance. These thermodynamic insights directly correlate with experimental etch behaviors.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the modeling shows which co-reactants form volatile chlorides versus nonvolatile solids, revealing which ligand-exchange reactions can drive ALE and which cannot.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Formation of volatile metal chlorides (e.g., ZrCl₄(g), WOCl₄(g)), Absence of stable nonvolatile by-products (e.g., sulfates, B₂O₃), Temperature-dependent stability of fluorides, Chloride–fluoride exchange energetics\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SOCl₂ produces mainly volatile SO₂(g) with WO₃, but forms nonvolatile sulfates (Zr(SO₄)₂, ZrOSO₄) with ZrF₄, explaining why SOCl₂ is excellent for TiO₂ ALE but ineffective for ZrO₂.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_35_fig_5.jpg","caption":"FIG. 5. Saturation curves of etch rate dependence on $\\mathrm{WF}_6$ and co-reactant dose times for $\\mathrm{TiO_2}$ [(a) and (b)] and for $\\mathrm{ZrO_2}$ [(c) and (d)]. All $\\mathrm{TiO_2}$ etching processes were performed at $170^{\\circ}\\mathrm{C}$ and $\\mathrm{ZrO_2}$ etching at $325^{\\circ}\\mathrm{C}$ . The etch rate per cycle was determined by in situ ellipsometry over 10 ALE cycles.","id":"test/atomic-layer-etching/experimental-usecase/35/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/35/fig_5","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/Comparison of BCl3, TiCl4, and SOCl2 chlorinating agents for.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1086,"height":872,"image_format":"jpeg","image_sha256":"e891fd1925bd4870cb46f3e92fbf7bd904eb4ef5da00a18a2c68f5415702ec36","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":14,"y":0,"width":535,"height":430},{"panel_id":"b","x":558,"y":0,"width":527,"height":430},{"panel_id":"c","x":14,"y":435,"width":534,"height":429},{"panel_id":"d","x":549,"y":432,"width":533,"height":435}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The TiO₂ etch rate increases rapidly with WF₆ dose time and approaches saturation for all co-reactants, with BCl₃ producing the highest etch rate, followed by SOCl₂ and TiCl₄, indicating co-reactant-dependent fluorination efficiency.\"},{\"panel_id\":\"b\",\"text\":\"When varying the co-reactant dose time for TiO₂ etching, the etch rate shows a self-limiting behavior, where BCl₃ reaches saturation fastest and at the highest rate, while SOCl₂ and TiCl₄ exhibit slower kinetics and lower saturation values.\"},{\"panel_id\":\"c\",\"text\":\"For ZrO₂ etching as a function of WF₆ dose time, BCl₃ leads to a very high and rapidly saturating etch rate, TiCl₄ shows moderate etching efficiency, and SOCl₂ results in minimal material removal, demonstrating strong precursor selectivity.\"},{\"panel_id\":\"d\",\"text\":\"The ZrO₂ etch rate versus co-reactant dose time reveals that BCl₃ again provides the most efficient and rapid etching, TiCl₄ shows slower saturation behavior, and SOCl₂ produces only weak etching, confirming co-reactant-controlled surface reaction kinetics.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Substrate|Variable Scanned|Best Co-reactant|Worst Co-reactant|Trend Summary|\\n|----------|----------------|----------------|-----------------|-------------|\\n|TiO2|WF6 dose time|SOCl2|TiCl4|Faster saturation for SOCl2; TiCl4 slow/low etch|\"},{\"panel_id\":\"b\",\"text\":\"| Substrate|Variable Scanned|Best Co-reactant|Worst Co-reactant|Trend Summary|\\n|----------|----------------|----------------|-----------------|-------------|\\n|TiO2|Co-reactant dose|SOCl2|TiCl4|SOCl2 gives highest etch rates; BCl3 moderate|\"},{\"panel_id\":\"c\",\"text\":\"| Substrate|Variable Scanned|Best Co-reactant|Worst Co-reactant|Trend Summary|\\n|----------|----------------|----------------|-----------------|-------------|\\n|ZrO2|WF6 dose time|BCl3|SOCl2|BCl3 saturates fastest and highest; SOCl2 very low|\"},{\"panel_id\":\"d\",\"text\":\"| Substrate|Variable Scanned|Best Co-reactant|Worst Co-reactant|Trend Summary|\\n|----------|----------------|----------------|-----------------|-------------|\\n|ZrO2|Co-reactant dose|BCl3|SOCl2|Strong BCl3 saturation; SOCl2 remains near zero|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The saturation behavior reveals which co-reactants efficiently convert fluorinated surfaces into volatile by-products. For TiO₂, SOCl₂ reaches the highest etch rate with rapid saturation, indicating excellent reactivity. For ZrO₂, BCl₃ produces the highest etch rates and strong self-limiting behavior, while SOCl₂ remains ineffective due to nonvolatile sulfate formation. These trends guide material-specific selection of co-reactants, enabling optimized, selective ALE processes for different oxide substrates.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the curves show clear plateaus for effective chemistries, confirming self-limiting etch behavior characteristic of ALE.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Volatility of chloride products, Ability to remove fluorinated intermediates, Formation of nonvolatile residues (e.g., sulfates), Temperature dependence of ligand-exchange reactions\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiO₂ etches fastest with SOCl₂, while ZrO₂ etches fastest with BCl₃, showing opposite reactivity trends for the two oxides.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_41_fig_2.jpg","caption":"FIG. 2. Ti2p XPS spectra intensity (a) before and (b) after the oxidation step, and (c) O1s XPS spectra intensity by varying the processing time at $100^{\\circ}$ C and $15$ W. The thickness of the $\\mathrm{TiO_2}$ layer as a function of (d) temperature at $15$ W and (e) RF power at $100^{\\circ}$ C in the oxidation step. The standard process conditions of the oxidation step were $\\mathrm{O_2}$ gas flow of $5$ SCCM, a pressure of $0.5$ Torr, a temperature of $100^{\\circ}$ C, an RF power of $15$ W, and a processing time of $300$ s.","id":"test/atomic-layer-etching/experimental-usecase/41/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/41/fig_2","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multiple scatter plot"},{"panel_id":"e","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/Plasma atomic layer etching for titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1344,"height":1564,"image_format":"jpeg","image_sha256":"4ea9b4531340a81a129eff6f8f682699cb75587a8fcea97eb569c76cfe6db5fc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":102,"y":46,"width":540,"height":468},{"panel_id":"b","x":802,"y":46,"width":541,"height":466},{"panel_id":"c","x":100,"y":561,"width":530,"height":469},{"panel_id":"d","x":723,"y":545,"width":605,"height":482},{"panel_id":"e","x":414,"y":1075,"width":606,"height":477}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Ti 2p XPS spectra of the TiN reference film show deconvoluted components assigned to TiN, TiOₓNᵧ, and TiO₂ across 450–470 eV. The relative contributions establish the initial surface chemistry prior to oxidation.\"},{\"panel_id\":\"b\",\"text\":\"After oxidation, the Ti 2p spectrum is dominated by the TiO₂ component, while TiN-related features are reduced. This shift indicates effective surface oxidation induced by the O₂ plasma step.\"},{\"panel_id\":\"c\",\"text\":\"O 1s spectra collected at 100 °C and 15 W evolve with oxidation time from 30 to 600 s. The TiO₂-related component near ~530 eV increases with time, consistent with progressive oxide growth.\"},{\"panel_id\":\"d\",\"text\":\"Estimated TiO₂ thickness increases with oxidation time for all temperatures at fixed RF power. Higher temperatures yield thicker oxides and reach saturation more rapidly.\"},{\"panel_id\":\"e\",\"text\":\"At 100 °C, increasing RF power produces thicker TiO₂ layers over time. The highest power (50 W) shows the largest thickness and fastest approach to saturation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Peak Assignment |\\n|---------------------|------------------|\\n| ~456 | TiN |\\n| ~457 | TiOxNy |\\n| 458–459 | TiO2 |\\n| ~462 | TiN |\\n| ~464 | TiO2 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Peak Assignment |\\n|---------------------|------------------|\\n| ~455 | TiN |\\n| ~457 | TiOxNy |\\n| 458–459 | TiO2 |\\n| 461–462 | TiN |\\n| ~464 | TiO2 |\"},{\"panel_id\":\"c\",\"text\":\"| Binding Energy (eV) | Sample Condition |\\n|---------------------|------------------|\\n| 529-531 | TiO2 (ref, 30s, 60a, 180s, 300s, 600s) |\\n| 531–532 | TiOxNy (ref, 30s, 60a, 180s, 300s, 600s) |\"},{\"panel_id\":\"d\",\"text\":\"| Time (sec)|Thickness at 50°C (nm) | 100°C (nm) | 150°C (nm) | 200°C (nm) |\\n|-----------|---------------------------|------------|---------|----------|\\n| 70 | ~0.15 | ~0.25 | ~0.40 | ~0.70 |\\n| 150 | ~0.25 | ~0.40 | ~0.70 | ~1.00 |\\n| 300 | ~0.30 | ~0.50 | ~0.85 | ~1.25 |\\n| 450 | ~0.30 | ~0.50 | ~0.85 | ~1.25 |\\n| 600 | ~0.30 | ~0.50 | ~0.85 | ~1.25 |\\n| 900 | ~0.30 | ~0.50 | ~0.85 | ~1.25 |\"},{\"panel_id\":\"e\",\"text\":\"| Time (sec) | TiO2 Thickness at 10W (nm) | TiO2 Thickness at 15W (nm) | TiO2 Thickness at 25W (nm) | TiO2 Thickness at 50W (nm) |\\n|-----------|------------------------------|---------|---------|---------|\\n| 70 | 0.20 | 0.30 | 0.50 | 0.60 |\\n| 150 | 0.25 | 0.40 | 0.75 | 1.50 |\\n| 300 | 0.25 | 0.50 | 1.00 | 2.00 |\\n| 600 | 0.25 | 0.50 | 1.00 | 2.50 |\\n| 900 | 0.25 | 0.50 | 1.00 | 2.90 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200 °C.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TiO₂-related O 1s feature near ~530 eV increases strongly as oxidation time increases (30 s → 600 s), and the growth becomes less pronounced at longer times, suggesting an approach toward saturation. A higher-binding-energy shoulder near ~531–532 eV remains present; the figure suggests the TiO₂ contribution becomes increasingly dominant with time.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The curves show a clear ordering (50 W > 25 W > 15 W > 10 W) at long times, indicating thicker oxide growth at higher RF power under otherwise fixed conditions.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiO₂ becomes the dominant contribution (relative to TiN/TiO_xN_y).\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_41_fig_3.jpg","caption":"FIG. 3. (a) Ti2p XPS spectra intensity after the fluorination step and (b) F1s XPS spectra intensity of $685.0\\mathrm{eV}$ with varying the processing time at $100^{\\circ}\\mathrm{C}$ and $15\\mathrm{W}$ of fluorination step. (c) F atomic fraction with $\\mathrm{CF_4}$ plasma-exposure time at RF powers of 10, 15, and $25\\mathrm{W}$ in the fluorination step. The standard process conditions of the fluorination step were a $\\mathrm{CF_4}$ gas flow of 2 SCCM, a pressure of $0.03\\mathrm{Torr}$ , a temperature of $100^{\\circ}\\mathrm{C}$ , an RF power of $15\\mathrm{W}$ , and a processing time of $20\\mathrm{s}$ .","id":"test/atomic-layer-etching/experimental-usecase/41/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/41/fig_3","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/Plasma atomic layer etching for titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1353,"height":1059,"image_format":"jpeg","image_sha256":"3bad2be5fb32bfb2f5e422db674379ae629ba6cc4aae1b510e9365d986661bb7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":96,"y":32,"width":550,"height":473},{"panel_id":"b","x":803,"y":27,"width":531,"height":470},{"panel_id":"c","x":468,"y":584,"width":557,"height":469}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Ti 2p XPS spectrum measured after the fluorination step, showing deconvoluted components attributed to TiN, TiOxNy, TiO₂, and fluorinated TiO₂−xFx species, indicating chemical modification of the surface during CF₄ plasma exposure.\"},{\"panel_id\":\"b\",\"text\":\"F 1s XPS spectra acquired at increasing fluorination times at 100 °C and 15 W, with a dominant peak near 685.0 eV whose intensity grows with time, reflecting progressive incorporation of fluorine into the surface layer.\"},{\"panel_id\":\"c\",\"text\":\"Fluorine atomic percentage plotted as a function of CF₄ plasma exposure time for RF powers of 10, 15, and 25 W, showing higher fluorine content and faster saturation at increased RF power.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding energy (eV) | Assignment |\\n|--------------------|-----------------|\\n| ~455–456 | TiN |\\n| ~456–457 | TiOxNy |\\n| ~458–459 | TiO2 |\\n| ~459–460 | TiO2−xFx |\\n| ~462 | TiN |\\n| ~464–465 | TiO2 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Peak Assignment | Observation |\\n|---------------------|----------------|-------------|\\n| ~685.0 | TiO2−xFx | Peak intensity increases with exposure time |\"},{\"panel_id\":\"c\",\"text\":\"| Time (s) | 10 W (%) | 15 W (%) | 25 W (%) |\\n|----------|----------|----------|----------|\\n| 10 | ~4–5 | ~5 | ~10 |\\n| 15 | ~9 | ~10 | ~15 |\\n| 20 | ~10 | ~10–11 | ~15–16 |\\n| 30 | ~11 | ~11–12 | ~17 |\\n| 45 | ~12 | ~12 | ~21 |\\n| 60 | ~12 | ~12 | ~24 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Ti 2p spectrum shows the emergence of TiO₂−xFx components alongside TiO₂ and TiN peaks, indicating that CF₄ plasma exposure leads to partial fluorination of the oxide layer rather than complete removal or bulk conversion.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher RF power results in higher fluorine atomic percentage at all exposure times.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiO2−xFx.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_41_fig_4.jpg","caption":"FIG. 4. (a) Ti2p XPS spectra intensity after the removal step at a temperature of $150^{\\circ}C$ , (b) F1s XPS spectra intensity of $685.0 \\text{eV}$ , and (c) F1s peak area spectra intensity for $\\text{TiO}_{2 - x}\\text{F}_x$ products as a function of temperature at the removal step. The standard process conditions of the removal step were an Ar gas flow of 50 SCCM, a pressure of 0.1 Torr, a temperature of $150^{\\circ}C$ , and a time of 30 s without RF power.","id":"test/atomic-layer-etching/experimental-usecase/41/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/41/fig_4","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/Plasma atomic layer etching for titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1253,"height":986,"image_format":"jpeg","image_sha256":"cd7ea5369f44112ed6841a33dad5394eeec7cb93e4dbdafe4cdd8350368db1c2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":94,"y":30,"width":517,"height":447},{"panel_id":"b","x":749,"y":28,"width":503,"height":437},{"panel_id":"c","x":352,"y":538,"width":562,"height":445}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Ti 2p XPS spectrum measured after the removal step at 150 °C, showing components assigned to TiN, TiOxNy, and TiO₂, with no fluorinated Ti species detected.\"},{\"panel_id\":\"b\",\"text\":\"F 1s XPS spectra recorded after the removal step at increasing temperatures, showing a strong F 1s signal at 80–120 °C that rapidly diminishes and approaches the noise level at temperatures ≥150 °C.\"},{\"panel_id\":\"c\",\"text\":\"F 1s peak area as a function of removal temperature, remaining high up to ~120 °C, dropping sharply near 140 °C, and becoming negligible above 150 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Major Peak Assignment |\\n|----------------------|-----------------------|\\n| ~456.0 | TiN |\\n| ~457.0 | TiOxNy |\\n| ~458.2 | TiO2 |\\n| ~462.0 | TiN |\\n| ~464.0 | TiO2 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Peak Assignment | Observation |\\n|----------------------|----------------|-------------|\\n| ~685.0 | 80°C,100°C,120°C | Highest Peak intensity |\\n| ~685.0 | 140°C,150°C,180°C,200°C | Lowest Peak intensity (near baseline) |\"},{\"panel_id\":\"c\",\"text\":\"| Temperature (°C) | F1s peak area (A.U.) |\\n|------------------|----------------------|\\n| 80 | 17000 |\\n| 100 | 17500 |\\n| 120 | 16000 |\\n| 140 | 2500 |\\n| 160 | 0 |\\n| 180 | 0 |\\n| 200 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After the removal step, the Ti 2p spectrum shows only TiN, TiOxNy, and TiO₂ components, with no signatures of fluorinated Ti species. This indicates that fluorine-containing surface species formed during fluorination are effectively removed during the thermal removal step.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between approximately 120 °C and 140 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thermal removal of fluorine from the surface.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG12_a.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/47/FIG12_a","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG12_a","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"not_found"},"width":575,"height":514,"image_format":"jpeg","image_sha256":"1746d36ebd70d78bb4ae5a186092d29a11f5d7c32f2513fafff36e150103bf94","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":7,"width":571,"height":507}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS Mo 3d spectra of a molybdenum sample as-received\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Peak Assignment | Binding Energy (eV) |\\n|-----------------|-----------------------|\\n| Mo 3d₅/₂ (Mo⁶⁺) | ~236 |\\n| Mo 3d₃/₂ (Mo⁶⁺) | ~232 |\\n| Mo 3d₅/₂ (Mo⁴⁺) | ~234 |\\n| Mo 3d₃/₂ (Mo⁴⁺) | ~230 |\\n| Minor feature | ~228 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"XPS probes the top five or so nanometers of the surface, whereas LEIS is able to distinguish the topmost surface atoms from the atoms underneath\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To get further insight into the etching mechanism of Mo with O2 and NbCl5, the films were etched until a selected point of the process and then transferred in vacuo to XPS. On the as-received film, there was a thick native oxide layer due to a long storage in air.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the XPS spectrum of Mo 3d5/2 and 3d3/2 peaks at 232.7 and 235.9 eV make up most of the intensity, attributed to Mo6+, with peaks at 231.6 and 234.7 eV\\narising from Mo5+. A small signal of Mo0 is also visible at 227.9 and 231.0 eV\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG12_b.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/47/FIG12_b","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG12_b","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_b.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"not_found"},"width":536,"height":517,"image_format":"jpeg","image_sha256":"4beed8529191194a9a26d5a94b2bcf13d058cc5332adcdc63bc9a3688f5a6be0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":0,"width":525,"height":511}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"X-ray photoelectron spectra of Mo 3d spectra of a molybdenum sample after heating in vacuum at 300 °C for 20 min.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Oxidation State | Peak Assignment | Binding Energy (eV) |\\n|-----------------|-----------------|-----------------------|\\n| Mo⁰ | Mo 3d | ~228 |\\n| Mo³⁺ | Mo 3d | ~230 |\\n| Mo⁴⁺ | Mo 3d | ~232 |\\n| Mo⁵⁺ | Mo 3d | ~234 |\\n| Mo⁶⁺ | Mo 3d | ~236 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To measure a spectrum that corresponds to the film surface just before etching is started, the sample was heated in vacuum to 300 °C and kept at this temperature for 20 min under a constant N2 flow\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A significant decrease in the relative intensity of Mo6+ was observed compared to the as-received sample, with a corresponding increase in the intensity of Mo5+ and appearance of Mo4+ peaks at 230.5 and 233.7 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This demonstrates that MoO3 is reduced in vacuum at 300 °C, possibly due to comproportionation reactions between Mo and MoO3.33\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG12_c.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/47/FIG12_c","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG12_c","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_c.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"not_found"},"width":578,"height":519,"image_format":"jpeg","image_sha256":"01992667315904e782cc54986afd50e3bc900ee6ed7fe1fe7261548e85ffa0f5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":5,"width":572,"height":513}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a Mo 3d spectra chart with peaks at specific binding energies, after etching with one 4 s NbCl5 pulse\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Oxidation State | Peak Assignment | Binding Energy (eV) |\\n|-----------------|-----------------|-----------------------|\\n| Mo⁰ | Mo 3d | ~228 |\\n| Mo³⁺ | Mo 3d | ~230 |\\n| Mo⁴⁺ | Mo 3d | ~231 |\\n| Mo⁵⁺ | Mo 3d | ~232 |\\n| Mo⁶⁺ | Mo 3d | ~234 |\\n| Additional Mo⁶⁺ component | - | ~236 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After the first NbCl5 pulse, a decrease in the Mo6+ and Mo5+ intensities is seen compared to the unetched film whereas Mo4+ has higher relative intensity than before etching\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The intensity of the metallic Mo0 is also higher, which indicates etching (thinning) of the surface oxide. An increase of the intensity between the oxide and metal peaks is seen, which corresponds to peaks at 229.6 and 232.7 eV. These are attributed to Mo3+, likely in the form of MoCl3.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The generation of MoCl3 is supported by the thermodynamic equilibrium calculations, which indicated that NbCl5 can react with Mo to make lower valence chlorides.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG12_d.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/47/FIG12_d","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG12_d","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_d.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_d.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"not_found"},"width":536,"height":516,"image_format":"jpeg","image_sha256":"bbae41d0e060a2afdbb96cb06ec24dc7497eadc2cd8fff75314729e156480f77","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":6,"width":532,"height":506}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS Mo 3d spectra after oxidizing the etched sample with a 6 s O2 pulse at 300 °C\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Oxidation State | Peak Assignment | Binding Energy (eV) |\\n|-----------------|-----------------|-----------------------|\\n| Mo⁰ | Mo 3d | ~228 |\\n| Mo³⁺ | Mo 3d | ~230 |\\n| Mo⁴⁺ | Mo 3d | ~231 |\\n| Mo⁵⁺ | Mo 3d | ~232 |\\n| Mo⁶⁺ | Mo 3d | ~234 |\\n| Additional Mo⁶⁺ component | - | ~236 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"CPS\\n, Mo⁰\\n, Mo³⁺\\n, Mo⁴⁺\\n, Mo⁵⁺\\n, Mo⁶⁺\\n, BG\\n, Envelope\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film was next oxidized at 300 °C with a 6 s pulse of O2. An increase in the Mo6+ intensity is seen, along with a decrease in Mo3+, showing the oxidation of the surface, the Mo0 intensity also increases.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"the Mo0 intensity increases after 6s pulse of O2, which indicates that the surface layer gets thinner during the O2 pulse. The thinning might be caused by some of the MoCl3 being oxidized directly to volatile oxychlorides.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Red and black corresponding to CPS and envelope.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG12_e.jpg","caption":"FIG. 12. XPS Mo 3d spectra of a molybdenum sample (a) as-received, (b) after heating in vacuum at $300^{\\circ}\\mathrm{C}$ for $20\\mathrm{min}$ , (c) after etching with one $4\\mathrm{s}$ $\\mathrm{NbCl}_5$ pulse and (d) after oxidizing the etched sample with a $6\\mathrm{s}$ $\\mathrm{O}_2$ pulse at $300^{\\circ}\\mathrm{C}$ . The same sample after three full ALE cycles and (e) one $\\mathrm{NbCl}_5$ pulse, and (f) oxidized again with $\\mathrm{O}_2$ .","id":"test/atomic-layer-etching/experimental-usecase/47/FIG12_e","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG12_e","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_e.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_e.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":578,"height":519,"image_format":"jpeg","image_sha256":"5c064e18d0d33ebaff46a7d177d1990927153bbfb19139064d797019352bf97a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":5,"width":570,"height":511}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A XPS spectra chart displaying the intensity of Mo 3d peaks at various binding energies after being exposed to 4th cycle NbCl5\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Oxidation State | Peak Assignment | Binding Energy (eV) |\\n|-----------------|-----------------|-----------------------|\\n| Mo⁰ | Mo 3d | ~228 |\\n| Mo³⁺ | Mo 3d | ~230 |\\n| Mo⁴⁺ | Mo 3d | ~231 |\\n| Mo⁵⁺ | Mo 3d | ~232 |\\n| Mo⁶⁺ | Mo 3d | ~234 |\\n| Additional Mo⁶⁺ component | - | ~236 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The intensities of the Mo5+ and Mo6+ states decrease, and the peaks identified as Mo metal and Mo3+ become more intense\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The change indicates that the surface oxide layer of the molybdenum film is etched and replaced by a thinner nonvolatile oxide-chloride layer\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the fourth O2 pulse, the Mo3+ doublet intensity decreases, and the Mo6+, Mo5+, Mo4+ and Mo0 peaks become stronger. This again indicates that O2 is both oxidizing the molybdenum surface and partially volatilizing the previously generated MoCl3\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG12_f.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/47/FIG12_f","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG12_f","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_f.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_f.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"not_found"},"width":533,"height":519,"image_format":"jpeg","image_sha256":"15bf1c857cfc58294beea54add661499ddfcc416b5713b880289bd8c85b23e20","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":6,"width":524,"height":512}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS spectra chart displaying Mo 3d binding energy peaks after 4th cycle oxidation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Oxidation State | Peak Assignment | Binding Energy (eV) |\\n|-----------------|-----------------|-----------------------|\\n| Mo⁰ | Mo 3d | ~228 |\\n| Mo³⁺ | Mo 3d | ~230 |\\n| Mo⁴⁺ | Mo 3d | ~231 |\\n| Mo⁵⁺ | Mo 3d | ~232 |\\n| Mo⁶⁺ | Mo 3d | ~234 |\\n| Additional Mo⁶⁺ component | - | ~236 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Red → CPS\\n, Purple → Mo⁰\\n, Blue → Mo³⁺\\n, Teal (cyan) → Mo⁴⁺\\n, Green → Mo⁵⁺\\n, Yellow → Mo⁶⁺\\n, Black dashed line → BG (Background)\\n, Black solid line → Envelope\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With further ALE cycles, the intensities of the Mo5+ and Mo6+ states decrease, and the peaks identified as Mo metal and Mo3+ become more intense\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the fourth O2 pulse, the Mo3+ doublet intensity decreases, and the Mo6+, Mo5+, Mo4+ and Mo0 peaks become stronger. This again indicates that O2 is both oxidizing the molybdenum surface and partially volatilizing the previously generated MoCl3\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"yes\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig11.jpg","caption":"FIG.11. Mass traces of (a) $\\mathsf{BF}_2^+$ at $m / z = 47$ amu and $\\mathsf{BFOH}^+$ at $m / z = 49$ amu and (b) $\\mathrm{H}_2\\mathrm{O}^+$ at $m / z = 18$ amu vs time during the first five HF exposures on $\\mathrm{B}_2\\mathrm{O}_3$ powder.","id":"test/atomic-layer-etching/simulation-usecase/28/fig11","sample_id":"atomic-layer-etching/simulation-usecase/28/fig11","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":672,"height":470,"image_format":"jpeg","image_sha256":"3e7850b0fb88ef279629a5196bc9377318720cbc42ba030528e82a1c3aea8b61","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":667,"height":222},{"panel_id":"b","x":4,"y":231,"width":663,"height":236}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Mass spectrometry traces showing the evolution of fluorinated boron species during five HF pulses. The BF2+ signal increases progressively with successive cycles, while the BFOH+ signal decreases, indicating a shift from hydroxyl-containing to more fully fluorinated surface species.\"},{\"panel_id\":\"b\",\"text\":\"Mass spectrometry trace tracking H2O+ evolution during repeated HF exposure. The signal increases over the first few cycles and then levels off, indicating saturation in water release behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|HF Cycle |\\tTime (min)\\t|BF₂⁺ (m/z 49amu) mV\\t|BFOH⁺ (m/z 47amu) mV|\\n|---|---|---|---|\\n|1st\\t|~2.5-5.00\\t|~60 mV\\t |~45 mV|\\n|2nd\\t|~7.5-10.00\\t|~95 mV\\t |~40 mV|\\n|3rd\\t|~12.5-15.00 |~110 mV\\t|~30 mV|\\n|4th\\t|~17.5-20.00 |~110 mV\\t|~20 mV|\\n|5th\\t|~22.5-25.00 |~100 mV\\t|~20 mV|\"},{\"panel_id\":\"b\",\"text\":\"|HF Cycle\\t|Time (min)\\t|H₂O⁺ (m/z 18amu) mV|\\n|---|---|---|\\n|1st\\t|~2.5-5.00\\t|~300 mV|\\n|2nd\\t|~7.5-10.00\\t|~450 mV|\\n|3rd\\t|~12.5-15.00 |~480 mV|\\n|4th\\t|~17.5-20.00 |~460 mV|\\n|5th\\t|~22.5-25.00 |~430 mV|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The data reveals an inverse relationship between the two fluorinated species as the process proceeds. The BF2+ signal (indicating pure fluorination) roughly doubles from ~60 mV to a peak of ~110 mV, suggesting the surface is becoming more effectively fluorinated. Conversely, the BFOH+ signal (indicating partial hydroxy-fluorination) decreases by more than half (45 mV to 20 mV), suggesting a reduction in surface hydroxyl groups available for this specific reaction pathway.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"m/z = 49 for BF2+ \\n, m/z = 47 for BFOH+\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the release is pulsed, occurring only during the discrete HF exposure times (approx. every 5 minutes).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It reaches a maximum of approximately 480 mV at the 3rd HF cycle.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig9.jpg","caption":"FIG.9. Mass spectrum of products monitored in the range of $m / z = 70-140$ amu during spontaneous etching of $\\mathrm{B}_2\\mathrm{O}_3$ by HF at $150^{\\circ}C$ during the a first HF exposure and (b) fifth HF exposure. Observed products are $\\mathrm{B}_3\\mathrm{O}_3\\mathrm{F}_3$ , $\\mathrm{B}_3\\mathrm{O}_3\\mathrm{F}_2\\mathrm{OH}$ , and $\\mathrm{B}_3\\mathrm{O}_3\\mathrm{F}(\\mathrm{OH})_2$ boroxine rings.","id":"test/atomic-layer-etching/simulation-usecase/28/fig9","sample_id":"atomic-layer-etching/simulation-usecase/28/fig9","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":675,"height":503,"image_format":"jpeg","image_sha256":"4f607a3da94900a6429dcc83b8ba16c09e668dd2f65ed48487ac4edff57bb1da","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":670,"height":496}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows mass spectra recorded at 150 °C during spontaneous etching of B2O3 by HF, comparing the first and fifth HF exposures. During the first HF exposure, intense peaks corresponding to fluorinated boron oxide and boroxine-related ions are observed, while these signals are strongly suppressed after the fifth HF exposure, consistent with progressive depletion of readily volatilizable reaction products.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| m/z range | Assigned ion | Relative intensity | HF exposure |\\n|-----------|--------------|--------------------|-------------|\\n| ~78–80 | B2F3⁺ / B2F2(OH)⁺ | High | 1st HF |\\n| ~90–95 | B2OF3⁺ / B2OF2(OH)⁺ | Moderate | 1st HF |\\n| ~115–120 | B3O3F2⁺ / B3O3F(OH)⁺ | Low–moderate | 1st HF |\\n| ~135–140 | B3O3F3⁺ / B3O3F2(OH)⁺ | Low | 1st HF |\\n| 70–140 | - | Near zero | 5th HF |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The strong signal during the first HF exposure indicates active formation of volatile fluorinated boron species. By the fifth exposure, the intensity is greatly reduced, showing that most reactive surface species have already been consumed.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first HF exposure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Boroxine rings are structural motifs present in B2O3. During the initial HF exposure, these units react and fragment, producing fluorinated boron–oxygen species that desorb and are detected in the mass spectrum.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the reduced signal is consistent with self-limiting behavior, although this figure alone does not prove saturation.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig_2.jpg","caption":"FIG. 2. Infrared absorbance spectra from 400 to $1800~\\mathrm{cm^{-1}}$ during $\\mathsf{B}_2\\mathsf{O}_3$ ALD using $\\mathrm{BCl}_3$ and $\\mathrm{H}_2\\mathrm{O}$ as reactants after 1, 5, 10, and 15 $\\mathrm{B}_2\\mathrm{O}_3$ ALD cycles at $40^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-etching/simulation-usecase/28/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/28/fig_2","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":675,"height":522,"image_format":"jpeg","image_sha256":"d742a6ca15a0ccd4f4d15715d508d7ee394b17d4191ef847acbdfeb57d925ecf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":670,"height":516}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows infrared absorbance spectra of B2O3 films grown by ALD using BCl3 and H2O at 40 °C after 1, 5, 10, and 15 cycles. The progressive increase in the B–O stretching and B–O–B bending bands reflects steady film growth with increasing number of ALD cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wave number | Features | 1 Cycle | 5 Cycles | 10 Cycles | 15 Cycles|\\n|-------------|---------------------|---------|---------|-----------|----------|\\n| ~1450 | B-O stretch (Peak 1)|\\t0.15 | 0.43\\t| 0.60 | 0.71 |\\n| ~1350 | Valley between peaks|\\t0.08 | 0.22\\t| 0.41 | 0.54 |\\n| ~1260 | B-O stretch (Peak 2)|\\t0.10 | 0.30\\t| 0.50 | 0.63 |\\n| ~1100 | Minor shoulder\\t | 0.05 | 0.10\\t| 0.15 | 0.18 |\\n| ~920 | Baseline region\\t | 0.02 | 0.04\\t| 0.06 | 0.08 |\\n| ~720 | B-O-B bend (Sharp) |\\t0.04 | 0.13\\t| 0.22 | 0.30 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increasing intensity of the B–O stretching band with each additional ALD cycle shows that more B–O bonds are being incorporated into the film. This steady growth in absorbance is consistent with layer-by-layer deposition during the ALD process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The B–O stretching band.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The B–O–B bending mode.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig_3.jpg","caption":"FIG. 3. Infrared difference spectra recorded after $\\mathrm{BCl}_3$ and $\\mathrm{H}_2\\mathrm{O}$ exposures during 13th $\\mathrm{B}_2\\mathrm{O}_3$ ALD cycle at $40^{\\circ}\\mathrm{C}$ . (a) Difference spectra between 400 and $1800~\\mathrm{cm^{-1}}$ . (b) Difference spectra between 2500 and $4000~\\mathrm{cm^{-1}}$ .","id":"test/atomic-layer-etching/simulation-usecase/28/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/28/fig_3","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":675,"height":481,"image_format":"jpeg","image_sha256":"280f5993c0c57f149a98d93b1c575a0d5ae7674b98715b3349ce6b660a373207","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":7,"width":664,"height":220},{"panel_id":"b","x":2,"y":232,"width":670,"height":245}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure compares infrared difference spectra between 400 and 1800 cm⁻¹ recorded after BCl3→H2O and H2O→BCl3 exposures during the 13th B2O3 ALD cycle at 40 °C. Differences in the B–O stretching, B–Cl, and B–O–B bending regions show that the order of precursor exposure strongly affects surface bonding.\"},{\"panel_id\":\"b\",\"text\":\"The subfigure shows corresponding difference spectra in the O–H stretching region. The presence and intensity of BO–H and hydrogen-bonded O–H features indicate different hydroxylation behavior depending on whether H2O or BCl3 is dosed first.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wave number region (cm⁻¹) | Vibrational assignment | Difference between exposure sequences |\\n|--------------------------|------------------------|---------------------------------------|\\n| ~1400–1600 | B–O stretch | Stronger feature for BCl3→H2O sequence |\\n| ~1000 | B–Cl related mode | Present after BCl3 exposure, reduced after H2O |\\n| ~700–800 | B–O–B bend | Appears more clearly after H2O exposure |\\n| ~500–600 | O–B–O bend | Small but distinct differences between sequences |\"},{\"panel_id\":\"b\",\"text\":\"| Wave number region (cm⁻¹) | Vibrational assignment | Difference between exposure sequences |\\n|--------------------------|------------------------|---------------------------------------|\\n| ~3700 | BO–H stretch | Sharp feature associated with hydroxyl formation |\\n| ~3600–3200 | H-bonded O–H | Broad positive band stronger for H2O→BCl3 sequence |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Changing the exposure order alters which surface bonds form first during the ALD cycle. This is reflected in differences in the B–O stretching, B–Cl, and bending modes, showing that surface chemistry depends strongly on whether chlorination or hydroxylation occurs first.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The band near ~1000 cm⁻¹.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The H2O→BCl3 sequence.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig_4.jpg","caption":"FIG. 4. Infrared difference spectra between 400 and $1800~\\mathrm{cm^{-1}}$ recorded after consecutive HF exposures on the $\\mathrm{B}_2\\mathrm{O}_3$ ALD film at $150^{\\circ}\\mathrm{C}$ using the original $\\mathrm{B}_2\\mathrm{O}_3$ ALD film as reference. Original $\\mathrm{B}_2\\mathrm{O}_3$ ALD film is nearly completely removed after $>5$ HF exposures.","id":"test/atomic-layer-etching/simulation-usecase/28/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/28/fig_4","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":675,"height":456,"image_format":"jpeg","image_sha256":"677c6e52d4e262cbbfa53b976658bfd8fe13650ded8d79ea2cdf371b1adfa58d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":3,"width":668,"height":447}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows multiple infrared difference spectra of a B2O3 ALD film recorded after consecutive HF exposures at 150 °C. The progressive deepening of the B–O stretching band and the persistence of the B–O–B bending feature indicate rapid removal of the B2O3 film, which is nearly complete after more than five HF exposures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber region (cm⁻¹) | Vibrational assignment | Evolution with HF exposure |\\n|--------------------------|------------------------|----------------------------|\\n| ~1250–1600 | B–O stretch | Strong negative band that deepens with increasing HF exposure; nearly saturated after ~5 exposures |\\n| ~700–800 | B–O–B bend | Distinct negative feature that persists throughout HF cycling |\\n| ~1000 | Baseline region | Minor changes relative to main B–O features |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increasing depth of the B–O stretching band shows that B–O bonds are progressively removed as HF exposure continues. The saturation of this feature after several cycles indicates that most of the B2O3 film has been etched away.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After about five HF exposures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The B–O–B bending mode.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig_5.jpg","caption":"FIG. 5. Infrared difference spectra between 3350 and $3850~\\mathrm{cm^{-1}}$ recorded after consecutive $\\mathrm{HF}$ exposures on the $\\mathrm{B}_2\\mathrm{O}_3$ ALD film at $150^{\\circ}\\mathrm{C}$ using the original $\\mathrm{B}_2\\mathrm{O}_3$ ALD film as reference.","id":"test/atomic-layer-etching/simulation-usecase/28/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/28/fig_5","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":678,"height":503,"image_format":"jpeg","image_sha256":"cc70cf2ba1aaf0ea31c14bbe1d65100de61bcf8105fc82fbb1959f35a683cff1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":2,"width":669,"height":496}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows multiple infrared difference spectra of a B2O3 ALD film recorded after consecutive HF exposures at 150 °C. A sharp H–F stretching feature appears after HF dosing, while the B–O–H band decreases, indicating loss of specific hydroxyl configurations. Simultaneously, a broad hydrogen-bonded O–H band deepens with increasing HF exposure, reflecting progressive changes in surface O–H bonding.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber region (cm⁻¹) | Vibrational assignment | Evolution with HF exposure |\\n|--------------------------|------------------------|----------------------------|\\n| ~3750–3800 | H–F stretch | Sharp positive peak appears after initial HF exposure |\\n| ~3700 | B–O–H stretch | Negative feature indicating loss of B–O–H species |\\n| ~3650–3450 | H-bonded O–H | Broad negative band that deepens and broadens with repeated HF exposures (cycles 4–9) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increasing depth and width of the O–H stretching band indicate that the surface O–H environment becomes more strongly hydrogen-bonded as HF exposure continues. At the same time, the negative B–O–H feature shows depletion of specific hydroxyl configurations present in the initial film. Together, these trends reflect progressive modification of surface O–H bonding during repeated HF exposure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The sharp band near 3750–3800 cm⁻¹.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It decreases in intensity, indicating loss of B–O–H species.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig_6.jpg","caption":"FIG. 6. Infrared difference spectra showing absorbance after first HF exposure referenced to the initial $\\mathrm{B}_2\\mathrm{O}_3$ ALD film and ninth HF exposure referenced to absorbance after the eighth HF exposure. Inverted absorbance for original $\\mathrm{B}_2\\mathrm{O}_3$ ALD film is also shown for comparison.","id":"test/atomic-layer-etching/simulation-usecase/28/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/28/fig_6","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":681,"height":503,"image_format":"jpeg","image_sha256":"ceaa8840a2c7ef69b31c24623a61b407910c8e86e6b352809a9d491a1f0b89e4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":0,"width":673,"height":499}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares multiple infrared difference spectra of a B2O3 ALD film recorded after the first and ninth HF exposures at 150 °C, together with an inverted reference spectrum. The progressive loss of the B–O stretching band and the appearance of B–F related features indicate systematic chemical modification and fluorination of the B2O3 film with repeated HF exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber region (cm⁻¹) | Assignment | Trend across spectra |\\n|--------------------------|------------|----------------------|\\n| ~1400–1600 | B–O stretch | Strong in B2O3 ALD, progressively reduced after repeated HF exposure |\\n| ~1350 | B–F mode | Appears after HF exposure and strengthens with cycling |\\n| ~800–900 | Framework modes | Minor changes between spectra |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The decrease of the B–O stretching band shows that B–O bonds are being removed or altered during HF exposure. At the same time, new features associated with B–F bonding appear, indicating fluorination of the surface as the reaction proceeds.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The band in the ~1400–1600 cm⁻¹ region.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ninth HF exposure shows a weaker B–O stretch and more pronounced B–F related features.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig_7.jpg","caption":"FIG. 7. Infrared difference spectra between 400 and $1800~\\mathrm{cm^{-1}}$ recorded after consecutive HF exposures on $\\mathrm{B}_2\\mathrm{O}_3$ ALD film at $40^{\\circ}\\mathrm{C}$ using the original $\\mathrm{B}_2\\mathrm{O}_3$ ALD film as reference. Original $\\mathrm{B}_2\\mathrm{O}_3$ ALD film is nearly completely removed after 2 HF exposures.","id":"test/atomic-layer-etching/simulation-usecase/28/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/28/fig_7","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":675,"height":503,"image_format":"jpeg","image_sha256":"970a920e67eb38c35e5bb29156a5ee40f54586482ece3f9288dd6a21bcfa688c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":667,"height":499}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure shows infrared difference spectra of a B2O3 ALD film recorded after consecutive HF exposures at 40 °C. A strong loss of the B–O stretching band and a clear B–O–B bending feature indicate progressive removal of the B2O3 film, which is nearly complete after the second HF exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Feature | Absorbance change |\\n|------------------|---------|-------------------|\\n| ~1400–1550 | B–O stretch | Strong negative band after 2nd HF exposure |\\n| ~1000 | Baseline region | Minor change |\\n| ~720 | B–O–B bend | Distinct negative peak |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The strong decrease in the B–O stretching band intensity shows that B–O bonds are being broken during HF exposure. The appearance and growth of negative features in the difference spectrum indicate loss of the original B2O3 vibrational modes, consistent with progressive etching of the film.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The B–O stretching mode.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The second HF exposure shows much stronger negative absorbance, indicating more extensive removal of the B2O3 film.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_20_fig_2.jpg","caption":"Fig. 2 XRR measurements of the two selected films with fitted simulations giving thicknesses of 32 and $23~\\mathrm{nm}$ and surface roughnesses of 0.7 and $0.6 \\mathrm{nm}$ for lanthanum titanate films with $33\\%$ and $25\\%$ of $\\mathrm{TiO_2}$ subcycles, respectively.","id":"test/atomic-layer-deposition/experimental-usecase/20/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/20/fig_2","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays X-ray Reflectivity (XRR) measurements plotted as the logarithm of intensity (in arbitrary units) versus the incident angle (in degrees). It compares the experimental reflectivity profiles against theoretical simulations for two lanthanum titanate films deposited with 33% and 25% TiO2 sub-cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Angle (°) | Log(intensity) (a.u.): 33% TiO2 sub-cycles | Log(intensity) (a.u.): Simulation for 33% TiO2 sub-cycles | Log(intensity) (a.u.):25 % TiO2 sub-cycles |Log(intensity) (a.u.): Simulation for 25% TiO2 sub-cycles | \\n|---|---|---|---|---|\\n| 0.0 | 16096 | 100000 | 1517 | 8284 |\\n| 0.5 | 36248 | 69142 | 3233 | 5419 |\\n| 1.0 | 974 | 974 | 110 | 110 |\\n| 1.5 | 154 | 154 | 41 | 41 | \\n| 2.0 | 34 | 34 | 3 | 3 |\\n| 2.5 | 42 | 42 | 1 | 1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The films are rather smooth (the presence of Kiessig fringes reveals small roughness).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film deposited with 33% TiO2 sub-cycles is thicker (as indicated by more frequent Kiessig fringes).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The simulation deviates most when the beam is oriented closest to 90 degrees relative to the surface normal. This corresponds to 0.0 - 0.5 degrees on the X-axis. In this region, the simulations overestimate the results. For angles higher than 0.5, the predicted values nearly perfectly align with the experimental ones.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Less than 1.0 (approx. 0.5).\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":483,"height":383}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/Titta Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":483,"height":383,"image_format":"jpeg","image_sha256":"aea6a5dcba1885e9964bafb6074664fc5e793aa075889d53d71cf37c8afe67ec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_21_fig_6.jpg","caption":"Fig. 6 XPS (a) C 1s, (b) Li 1s and (c) O 1s spectra for $\\mathrm{Li}_{2}\\mathrm{CO}_{3}$ grown by thermal ALD at $150^{\\circ}\\mathrm{C}$ . The measured spectra (black line) and fitted peaks (blue and red) are plotted together. The obtained $\\mathrm{Li}_{2}\\mathrm{CO}_{3}$ stoichiometry is $33.0\\mathrm{at\\%}$ Li, $17.7\\mathrm{at\\%}$ C and $49.3\\mathrm{at\\%}$ O.","id":"test/atomic-layer-deposition/experimental-usecase/21/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/21/fig_6","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the intensity of C 1s binding energy peaks at various energies\"},{\"panel_id\":\"b\",\"text\":\"The figure displays the intensity of Li 1s binding energy peaks at various energies\"},{\"panel_id\":\"c\",\"text\":\"The figure illustrates the intensity of O 1s binding energy peaks at various energies\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Component | Binding Energy (eV) |\\n|-----------|----------------------|\\n| Li₂CO₃ | ~290 |\\n| C=O | ~288 |\\n| C–O | ~286 |\\n| C–C | ~284.5 |\"},{\"panel_id\":\"b\",\"text\":\"| Component | Binding Energy (eV) |\\n|-----------|----------------------|\\n| Li₂CO₃ | ~55.5 |\"},{\"panel_id\":\"c\",\"text\":\"| Component | Binding Energy (eV) |\\n|-----------|----------------------|\\n| Li₂CO₃ | ~532 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The binding energy scale was calibrated by using the hydrocarbon contamination C 1s peak at 285.0 eV. As expected, the C 1s spectrum shows a main peak at 290.1 eV assigned to the carbonate environment in Li2CO3. The other peaks fitted with a red line are associated with\\nadventitious carbon on the sample surface\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The O 1s spectrum consists of a peak with a maximum at 531.8 eV. The shape of the peak is slightly asymmetric. To visualize the asymmetry a second peak is fitted to the data. The asymmetry can be explained by the crystallographic structure of Li2CO3 in which two oxygen atoms have an identical environment,\\nbut the third oxygen has a different environment of surrounding atoms\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The obtained stoichiometry for this flm was: \\n1. 33.0 at% lithium\\n2. 17.7 at% carbon \\n3. 49.3 at% oxygen\\ncorresponding to stoichiometric Li2CO3\"}]}]","bbox":[{"panel_id":"a","x":15,"y":5,"width":412,"height":326},{"panel_id":"b","x":438,"y":2,"width":423,"height":329},{"panel_id":"c","x":869,"y":3,"width":423,"height":328}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/N. Hornsveld et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1294,"height":333,"image_format":"jpeg","image_sha256":"a9ae980c149cb686bab2c217352584d8eb0d38ca5a510a7824f981262b970517","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_23_figure_4.jpg","caption":"Figure 4. (a) In situ FTIR spectra acquired after 5, 10, 15, 20, 25, and 30 complete TMGa-O₃ ALD cycles at $350^{\\circ}\\mathrm{C}$ referenced to the initial substrate spectrum. (b) Integrated absorbance of spectra in Figure 4a over the range $500 - 800 \\mathrm{cm}^{-1}$ versus the number of TMGa-O₃ ALD cycles.","id":"test/atomic-layer-deposition/experimental-usecase/23/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/23/figure_4","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"In situ FTIR spectra acquired after 5, 10, 15, 20, 25, and 30 complete TMGa-O3 ALD cycles at 350 °C referenced to the initial substrate spectrum.\"},{\"panel_id\":\"b\",\"text\":\"Integrated absorbance of spectra in Figure 4a over the range 500−800 cm−1 versus the number of TMGa-O3 ALD cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance 5 Cycles | Absorbance 10 Cycles | Absorbance 15 Cycles | Absorbance 20 Cycles | Absorbance 25 Cycles | Absorbance 30 Cycles |\\n|-------------------|------------------------|-------------------------|--------------------------|--------------------------|--------------------------|--------------------------|\\n| 1000 | 0.02 | 0.03 | 0.03 | 0.04 | 0.04 | 0.05 |\\n| 900 | 0.03 | 0.05 | 0.07 | 0.08 | 0.10 | 0.12 |\\n| 800 | 0.06 | 0.10 | 0.15 | 0.20 | 0.25 | 0.30 |\\n| 700 | 0.10 | 0.18 | 0.25 | 0.32 | 0.38 | 0.45 |\\n| 600 | 0.09 | 0.20 | 0.27 | 0.35 | 0.42 | 0.48 |\\n| 500 | 0.05 | 0.12 | 0.20 | 0.28 | 0.34 | 0.40 |\"},{\"panel_id\":\"b\",\"text\":\"| ALD cycles | Integrated absorbance |\\n|---|---|\\n| 5 | 25 |\\n| 10 | 50 |\\n| 15 | 75 |\\n| 20 | 90 |\\n| 25 | 115 |\\n| 30 | 130 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 800–500 cm⁻¹ region was used, where the bulk Ga₂O₃ vibrational modes are expected to appear.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The absorbance increases with an increasing number of Ga₂O₃ ALD cycles, indicating progressive film growth.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiO₂ nanopowder.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It indicates a layer-by-layer growth behavior of Ga₂O₃.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":5,"width":464,"height":478},{"panel_id":"b","x":485,"y":4,"width":480,"height":479}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/David J. Comstock et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":967,"height":483,"image_format":"jpeg","image_sha256":"bcbe81cdbb1f55771ba1d20fce71d33a0a0efed76d20a6d0179c10cbae471484","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_23_figure_9.jpg","caption":"Figure 9, the as-deposited films were amorphous and exhibited no observable diffraction peaks, which is similar to ALD $\\mathrm{Ga}_2\\mathrm{O}_3$","id":"test/atomic-layer-deposition/experimental-usecase/23/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/23/figure_9","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays XRD measurements from two 800 Å Ga2O3 films, with (a) as-deposited at 350 °C and (b) annealed at 900 °C for 20 minutes under Ar.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | 2θ (degrees) |\\n|---|---|\\n| As-deposited | |\\n| Annealed at 900 °C | Peaks at 31, 32, 38, 39, 50, 60 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"900 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"800 Å\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"20 minutes under argon atmosphere.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The as-deposited film (a) shows no signals in the XRD measurements, whilst the annealed film (b) does show clear peaks/signals. This means that the annealing caused the amorphous as-deposited film to crystallize. The authors have determined the crystallinity of the film to be β-Ga2O3.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":477,"height":500}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/David J. Comstock et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":477,"height":500,"image_format":"jpeg","image_sha256":"58cbbf4bc08a85b0e2c5c7a352c4afffc7c38bb1090837ba63d5d17f19f8b7b1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_24_figure_4.jpg","caption":"Figure 4. XPS core energy spectra for (a) titanium $2\\mathrm{p}$ orbital and (b) oxygen 1s orbital.","id":"test/atomic-layer-deposition/experimental-usecase/24/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/24/figure_4","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The spectral chart shows high-resolution XPS spectra of a titanium oxide film.displays the Ti 2p spin-orbit doublet with Ti 2p₃/₂ at ~459.0 eV and Ti 2p₁/₂ at ~464.7 eV (Δ ≈ 5.7 eV), confirming titanium in the fully oxidized Ti⁴⁺ state (TiO₂).\"},{\"panel_id\":\"b\",\"text\":\"The spectral chart shows an O 1s peak at ~530.5 eV from lattice oxygen, with a higher-binding-energy shoulder (~532 eV) attributed to surface hydroxyl groups or adsorbed species.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Intensity (10³ counts/s) | Condition | Remark |\\n|-------------------:|--------------------:|-------------------|-----------------|\\n| 454 | 0.49 | Ti 2p measured | |\\n| 454 | 0.49 | Background | |\\n| 455 | 0.55 | Ti 2p measured | |\\n| 455 | 0.55 | Background | |\\n| 456 | 0.60 | Ti 2p measured | |\\n| 456 | 0.60 | Background | |\\n| 457 | 0.71 | Ti 2p measured | |\\n| 457 | 0.49 | Background | |\\n| 458 | 1.61 | Ti 2p measured | |\\n| 458 | 0.49 | Background | |\\n| 459 | 17.23 | Ti 2p measured | Primary peak |\\n| 459 | 0.91 | Background | |\\n| 460 | 8.48 | Ti 2p measured | |\\n| 460 | 1.34 | Background | |\\n| 461 | 2.08 | Ti 2p measured | |\\n| 461 | 1.50 | Background | |\\n| 462 | 1.76 | Ti 2p measured | |\\n| 462 | 1.50 | Background | |\\n| 463 | 2.13 | Ti 2p measured | |\\n| 463 | 1.50 | Background | |\\n| 464 | 3.77 | Ti 2p measured | |\\n| 464 | 1.55 | Background | |\\n| 465 | 6.20 | Ti 2p measured | Secondary peak |\\n| 465 | 1.76 | Background | |\\n| 466 | 4.04 | Ti 2p measured | |\\n| 466 | 1.87 | Background | |\\n| 467 | 2.45 | Ti 2p measured | |\\n| 467 | 2.03 | Background | |\\n| 468 | 2.13 | Ti 2p measured | |\\n| 468 | 2.03 | Background | |\\n| 469 | 2.03 | Ti 2p measured | |\\n| 469 | | Background | |\\n| 470 | 2.24 | Ti 2p measured | |\\n| 470 | | Background | |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Intensity (10³ counts/s) | Condition | Remark |\\n|-------------------:|--------------------:|------------------|---------------|\\n| 525 | 2.26 | O 1s measured | |\\n| 525 | 2.26 | O 1s TiOx | |\\n| 525 | 2.26 | O 1s | |\\n| 525 | | Background | |\\n| 526 | 2.26 | O 1s measured | |\\n| 526 | 2.26 | O 1s TiOx | |\\n| 526 | 2.26 | O 1s | |\\n| 526 | | Background | |\\n| 527 | 2.26 | O 1s measured | |\\n| 527 | 2.26 | O 1s TiOx | |\\n| 527 | 2.26 | O 1s | |\\n| 527 | | Background | |\\n| 528 | 2.39 | O 1s measured | |\\n| 528 | 2.39 | O 1s TiOx | |\\n| 528 | 2.39 | O 1s | |\\n| 528 | | Background | |\\n| 529 | 2.78 | O 1s measured | |\\n| 529 | 2.71 | O 1s TiOx | |\\n| 529 | 2.45 | O 1s | |\\n| 529 | 2.39 | Background | |\\n| 530 | 22.20 | O 1s measured | Primary peak |\\n| 530 | 21.70 | O 1s TiOx | |\\n| 530 | 2.71 | O 1s | |\\n| 530 | 2.45 | Background | |\\n| 531 | 16.40 | O 1s measured | |\\n| 531 | 15.11 | O 1s TiOx | |\\n| 531 | 3.88 | O 1s | |\\n| 531 | 2.65 | Background | |\\n| 532 | 5.03 | O 1s measured | |\\n| 532 | 3.22 | O 1s TiOx | |\\n| 532 | 4.71 | O 1s | |\\n| 532 | 2.84 | Background | |\\n| 533 | 3.48 | O 1s measured | |\\n| 533 | 2.84 | O 1s TiOx | |\\n| 533 | 3.55 | O 1s | |\\n| 533 | 2.78 | Background | |\\n| 534 | 2.78 | O 1s measured | |\\n| 534 | 2.78 | O 1s TiOx | |\\n| 534 | 2.84 | O 1s | |\\n| 534 | 2.71 | Background | |\\n| 535 | 2.90 | O 1s measured | |\\n| 535 | 2.90 | O 1s TiOx | |\\n| 535 | | O 1s | |\\n| 535 | | Background | |\\n| 536 | 3.16 | O 1s measured | |\\n| 536 | 3.16 | O 1s TiOx | |\\n| 536 | | O 1s | |\\n| 536 | | Background | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The binding energy at ~459 eV is characteristic of fully oxidized Ti⁴⁺ in a TiO₂ lattice. If the film were under-oxidized or metallic (Ti⁰), the Ti 2p₃/₂ peak would shift to a much lower binding energy, around 453.8–454 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Annealing typically drives off loosely bound surface species (water/hydroxyle) and densifies the lattice. Therefore, the shoulder peak (~532 eV) would decrease in area, while the lattice peak (530.5 eV) would become sharper and more dominant. This would imply a more stable, stoichiometric, and dense TiO2 film with fewer surface defects.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sharp, symmetrical peaks in panel (a) confirm the absence of Ti³⁺ (sub-oxide) states. This is important because Ti³⁺ is associated with oxygen vacancies, which act as conductive defects (n-type dopants). A film containing Ti³⁺ would show higher leakage current, whereas the purely Ti⁴⁺ film observed here ensures good electrical insulation.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The peak at ~532 eV typically corresponds to surface hydroxyl groups (Ti-OH). In ALD, these hydroxyls act as the reactive nucleation sites. Without them, the incoming precursor (like TiCl4 or TDMAT) would have no chemical handle to react with, leading to poor nucleation or no growth.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":3,"width":625,"height":453},{"panel_id":"b","x":7,"y":454,"width":623,"height":443}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/Martin Rose et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":631,"height":919,"image_format":"jpeg","image_sha256":"4a0681f84fa46911f502cbc7d341625c1169778176e97a03817c917368fda7af","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_24_figure_5.jpg","caption":"Figure 5. TOF-SIMS profiles of carbon contamination for films deposited between 235 and $295^{\\circ}\\mathrm{C}$ . The deposition temperature increases along the arrow. The decrease of carbon contamination with increasing deposition temperature can be observed. The sample is divided into regions: the surface (I), the thin film region (II), the interface between the thin film and the substrate (III), and the bulk substrate (IV).","id":"test/atomic-layer-deposition/experimental-usecase/24/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/24/figure_5","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multi line chart shows Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) depth profiles characterizing carbon contamination decreases with increasing deposition temperature (235–295 °C). Films grown at lower temperature exhibit higher carbon content, while higher temperatures promote cleaner films due to more complete ligand removal and byproduct desorption.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sputtering time (s) | Carbon content (counts/s) | Condition |\\n|-------------------:|--------------------------:|-----------|\\n| 0 | 213.8 | 235 °C |\\n| 0 | 171.8 | 250 °C |\\n| 0 | 172.0 | 260 °C |\\n| 0 | 172.0 | 270 °C |\\n| 0 | 172.0 | 285 °C |\\n| 0 | 172.0 | 295 °C |\\n| 50 | 306.0 | 235 °C |\\n| 50 | 259.7 | 250 °C |\\n| 50 | 129.8 | 260 °C |\\n| 50 | 79.2 | 270 °C |\\n| 50 | 41.6 | 285 °C |\\n| 50 | 20.8 | 295 °C |\\n| 100 | 440.2 | 235 °C |\\n| 100 | 369.2 | 250 °C |\\n| 100 | 222.11 | 260 °C |\\n| 100 | 117.33 | 270 °C |\\n| 100 | 79.27 | 285 °C |\\n| 100 | 29.0 | 295 °C |\\n| 150 | 1301.25 | 235 °C |\\n| 150 | 923.36 | 250 °C |\\n| 150 | 574.89 | 260 °C |\\n| 150 | 189.0 | 270 °C |\\n| 150 | 113.02 | 285 °C |\\n| 150 | 54.16 | 295 °C |\\n| 200 | 612.56 | 235 °C |\\n| 200 | 507.79 | 250 °C |\\n| 200 | 453.20 | 260 °C |\\n| 200 | 516.03 | 270 °C |\\n| 200 | 465.80 | 285 °C |\\n| 200 | 318.64 | 295 °C |\\n| 250 | 511.71 | 235 °C |\\n| 250 | 381.82 | 250 °C |\\n| 250 | 343.76 | 260 °C |\\n| 250 | 306.09 | 270 °C |\\n| 250 | 238.98 | 285 °C |\\n| 250 | 217.79 | 295 °C |\\n| 300 | 427.74 | 235 °C |\\n| 300 | 343.76 | 250 °C |\\n| 300 | 301.77 | 260 °C |\\n| 300 | 255.86 | 270 °C |\\n| 300 | 222.11 | 285 °C |\\n| 300 | 176.20 | 295 °C |\\n| 350 | 348.00 | 235 °C |\\n| 350 | 276.66 | 250 °C |\\n| 350 | 243.00 | 260 °C |\\n| 350 | 217.79 | 270 °C |\\n| 350 | 192.68 | 285 °C |\\n| 350 | 138.13 | 295 °C |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The engineer should increase the temperature to 295°C. The peak carbon count in Region III drops from ~1350 counts/s at 235°C to ~350 counts/s at 295°C. This roughly 4x reduction confirms that operating at the upper limit of the thermal window is essential for film purity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If the substrate is a temperature-sensitive polymer (e.g., PET or PEN) with a glass transition temperature below 250°C, operating at 295°C would melt or warp the device. In this case, the engineer must accept the higher carbon contamination of the 235°C process as the necessary trade-off to maintain mechanical integrity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spike in Region III suggests that during the initial cycles (nucleation), the reaction chemistry is different from the steady-state growth. The precursors likely reacted incompletely with the native substrate surface or were trapped by initial surface contaminants, creating a specific carbon-rich interfacial layer before the film quality stabilized in Region II.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TOF-SIMS data shows significantly lower carbon content in Region II for the 285°C sample compared to the 250°C sample. Lower carbon means fewer defect sites to trap charge or facilitate conduction paths (leakage), thereby improving the dielectric's reliability and resistance to breakdown over time.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":626,"height":443}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/Martin Rose et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":631,"height":445,"image_format":"jpeg","image_sha256":"a4374f3abe6b7d33f4c10315ccb442fb9a8aa03a7903b1413c7b0a39029364b9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_3_figure_9.jpg","caption":"Figure 9. Portion of the RBS spectra for hafnium oxide deposited from tetrakis(ethylmethylamido)hafnium at 400 and $450^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-deposition/experimental-usecase/3/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/3/figure_9","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The spectrum plots detected counts versus energy for 400 °C and 450 °C, showing separate signals attributed to carbon from the substrate and film and nitrogen in the film.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Energy (MeV) | 400 °C: Counts | 450 °C: Counts |\\n|---|---|---|\\n| 0.475 | 90.9 | 125.1 |\\n| 0.488 | 33.1 | 76.7 |\\n| 0.515 | 24.9 | 61.3 |\\n| 0.594 | 18.9 | 29.1 |\\n| 0.619 | 15.1 | 25.5 |\\n| 0.645 | 16.2 | 25.7 |\\n| 0.675 | 75.3 | 124.2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The visible peaks for carbon and nitrogen at 450 °C indicate a significant contamination. A suitable ALD process window would be at lower temperatures, where impurity signals are lower.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher intensity of the carbon and nitrogen in film.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The counts most likely come from the oxygen signal.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":536,"height":386}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/Hausmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":536,"height":386,"image_format":"jpeg","image_sha256":"92d3c1546b9fe1f166d6a5e2d08b6f82169c7b3e200f7fcfe7ee24a4584c8ed4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_56_figure_3.jpg","caption":"Figure 3. (a) Core level XPS spectra for $40~\\mathrm{nm}$ LiPON films deposited under conditions of varying temperature and plasma power. By reducing the deposition temperature more nitrogen is incorporated in the layer. When increasing the plasma power, more nitrogen becomes incorporated in triply coordinated form. (b) Temperature dependence of conductivity for different LiPON deposition conditions. A clear increase in conductivity is detected by reducing the temperature and increasing the plasma power. However, saturation seems to appear from $5\\times 10^{-7}\\mathrm{S / cm}$ on.","id":"test/atomic-layer-deposition/experimental-usecase/56/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/56/figure_3","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the intensity of N 1s peaks for different plasma powers and temperatures.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the conductivity (Cond) of LiPO and LiPON materials as a function of inverse temperature (1000/T).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | 275 °C 100 W | 275 °C 200 W | 275 °C 300 W | 100 °C 100 W |\\n| --- | --- |--- | --- | --- |\\n| 408 | - | - | - | - |\\n| 406 | - | - | - | - |\\n| 404 | - | - | - | - |\\n| 402 | - | - | - | - |\\n| 400 | - | - | - | - |\\n| 398 | peak at 399 eV | - | peak at 399 eV | peak at 399 eV |\\n| 396 | peak at 397 eV | peak at 397 eV | peak at 397 eV | peak at 397 eV |\\n| 394 | - | - | - | - |\"},{\"panel_id\":\"b\",\"text\":\"| Cond (S/cm) | LiPO 275C | LiPON 275C 100 W | LiPON 275C 300 W | LiPON 200C 100 W | LiPON 100C 100 W |\\n| --- | --- | --- | --- | --- | --- | \\n| 2.9 | 10^-8 | 10^-7 | 10^-5 | 10^-5 | 10^-5 |\\n| 3.0 | 10^-9 | 10^-7 | 10^-6 | 10^-5 | 10^-5 |\\n| 3.1 | 10^-9 | 10^-8 | 10^-6 | 10^-5 | 10^-6 |\\n| 3.2 | 10^-10 | 10^-8 | 10^-6 | 10^-6 | 10^-6 |\\n| 3.3 | 10^-10 | 10^-8 | 10^-7 | 10^-6 | 10^-6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"275 °C and 100 °C, and plasma power of 100 W, 200 W and 300 W.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 100 °C, 100 W sample exhibits more intense peaks, as well as a shoulder related to the presence of other N species.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Conductivity decreases for all the samples, as the 1000/T value increases.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Adding N2 plasma increases the conductivity of the samples.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":1,"width":587,"height":582},{"panel_id":"b","x":594,"y":3,"width":796,"height":578}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/Put et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1395,"height":583,"image_format":"jpeg","image_sha256":"71613a0c01c7d82c0c2a0d2d070b47a11193af84e4cbac0b1f67100e1e673505","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_62_fig_3.jpg","caption":"FiG. 3. (Color online) (a) Emission spectrum from a steady-state $\\mathrm{O}_2$ plasma and a spectrum of an $\\mathrm{O}_2$ plasma exposure during a plasma-assisted ALD cycle of $\\mathrm{Al}_2\\mathrm{O}_3$ . The latter spectrum was recorded after an $\\mathrm{Al(CH}_3\\mathrm{)}_3$ dosing step during the first $200~\\mathrm{ms}$ of plasma exposure, whereas the steady-state $\\mathrm{O}_2$ plasma spectrum was recorded well after the plasma half-reaction reached saturation. (b) Time-resolved intensities of emission lines related to plasma species and reaction products after an $\\mathrm{Al(CH}_3\\mathrm{)}_3$ dose had preceded. The plasma was ignited at time $t = \\sim 0.5 \\mathrm{s}$ .","id":"test/atomic-layer-deposition/experimental-usecase/62/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/62/fig_3","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows OES spectra of an O2 plasma in saturation and shortly after TMA dosing in an ALD cycle.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays the intensity of O, H, O2+, CO, and OH over time, where the plasma is struck after a TMA dose.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | Intensity (a.u.) O2 plasma |Intensity (a.u.) O2 plasma after ALD cycle |\\n|---|---|---|\\n| 260-350 | - | OH range |\\n| 350-720 | - | CO range |\\n| 560 | O2+ peak |O2+ peak |\\n| 610 | - | H peak |\\n| 780 | O peak |O peak |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Intensity (a.u.) O |Intensity (a.u.) H |Intensity (a.u.) O2+ |Intensity (a.u.) CO |Intensity (a.u.) OH |\\n|---|---|---|---|---|---|\\n| 0 | 0 |0 | 0 |0 | 0 |\\n| 1 | 400 |400|750|750|400|\\n| 2 | 500 |0|900|0|0|\\n| 3 | 500 |0|900|0|0|\\n| 4 | 500 |0|900|0|0|\\n| 5 | 500 |0|900|0|0|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectrum related to the plasma after the TMA dose shows a broad range of emissions. Such a range usually denoted emission from molecular species.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A hydrogen line can be found at 660 nm.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The saturated plasma exposure time is 2 s. At this time there is no more intensity measured of ligand related species.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ligands are composed of C and H atoms.\"}]}]","bbox":[{"panel_id":"a","x":10,"y":7,"width":624,"height":502},{"panel_id":"b","x":6,"y":510,"width":628,"height":531}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/Mackus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"62","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":633,"height":1041,"image_format":"jpeg","image_sha256":"59dcf68d0c5bd41ee122a07582124e6634662c19bfb6a604eb8e43c9b8513055","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_62_fig_4.jpg","caption":"FIG. 4. (Color online) (a) Emission spectrum from a steady-state $\\mathrm{O}_2$ plasma and a spectrum of an $\\mathrm{O}_2$ plasma exposure during a plasma-assisted ALD cycle of $\\mathrm{Ta}_2\\mathrm{O}_5$ . The latter spectrum was recorded after a $\\mathrm{Ta}[\\mathrm{N}(\\mathrm{CH}_3)_2]_5$ dosing step during the first $200~\\mathrm{ms}$ of plasma exposure. (b) Time-resolved intensities of emission lines of plasma species and reaction products after a $\\mathrm{Ta}[\\mathrm{N}(\\mathrm{CH}_3)_2]_5$ dose had preceded. The plasma was ignited at time $t = \\sim 0.5\\mathrm{s}$ .","id":"test/atomic-layer-deposition/experimental-usecase/62/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/62/fig_4","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a spectral intensity profile against wavelength, of an O2 plasma in saturation and shortly after a precursor dose.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the time-dependent intensity changes of specific molecular emissions (O, H, CO, CN) over time.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | Intensity (a.u.) O2 plasma |Intensity (a.u.) O2 plasma after ALD cycle |\\n|---|---|---|\\n| 360-400 | - | CN range |\\n| 400-750 | - | CO range |\\n| 660 | - | H alpha peak |\\n| 780 | O peak |O peak |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Intensity (a.u.) O |Intensity (a.u.) H |Intensity (a.u.) CO |Intensity (a.u.) CN |\\n|----------|------------------|----------|----------|------------------|\\n| 0 | 0 |0 |0 |0 |\\n| 0.5 | 0 |0 |0 |0 |\\n| 1 | 200 | 200 |100|100|\\n| 1.5 | 250 |130|80|80|\\n| 2 | 260 |80|50|50|\\n| 2.5 | 260 |50|50|20|\\n| 3 | 260 |50|50|20|\\n| 3.5 | 260 |50|50|20|\\n| 4 | 260 |50|50|20|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The used plasma is made of oxygen, but the emission also shows H, C and N species, so it it likely that these come from the ligands.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, there is overlap.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The intensity of the emission of species cannot be compared to others, if the goal is to determine the densities. With OES only the presence of species can be determined.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2.5 s would be far enough in saturation.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":631,"height":524},{"panel_id":"b","x":8,"y":528,"width":624,"height":535}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/Mackus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"62","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":637,"height":1069,"image_format":"jpeg","image_sha256":"ee9e00618fb8815c16194c21c8a4e8bcf6d640c3c64c53649c942fcd566d6587","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_62_fig_5.jpg","caption":"FIG. 5. (Color online) (a) Emission spectrum from a steady-state $\\mathrm{H}_2$ plasma and a spectrum of a $\\mathrm{H}_2$ plasma exposure during a plasma-assisted ALD cycle of $\\mathrm{TaN}$ . The latter spectrum was recorded after a $\\mathrm{Ta}[\\mathrm{N}(\\mathrm{CH}_3)_2]_5$ dosing step during the first $200~\\mathrm{ms}$ of plasma exposure. The inset shows the emission spectra around $388~\\mathrm{nm}$ in more detail. (b) Time-resolved emission intensity at $388~\\mathrm{nm}$ during the plasma exposure step for an ALD cycle with and without $\\mathrm{Ta}[\\mathrm{N}(\\mathrm{CH}_3)_2]_5$ dosing step. The plasma was ignited at time $t = \\sim 0.0\\mathrm{s}$ .","id":"test/atomic-layer-deposition/experimental-usecase/62/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/62/fig_5","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a spectral intensity plot with two curves representing H2 plasma and an H2 plasma in an ALD cycle.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays a line chart comparing the intensity at 388 nm of an H2 plasma and an H2 plasma in an ALD cycle over time.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | Intensity (a.u.) H2 plasma|Intensity (a.u.) H2 plasma after ALD cycle|\\n|---|---|---|\\n| 388 | peak | peak |\\n| 500 | peaks |peaks |\\n| 600 | peaks |peaks |\\n| 660 | H peak | H peak |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Intensity (a.u.) H2 plasma|Intensity (a.u.) H2 plasma after ALD cycle|\\n|---|---|---|\\n| 0 | 0 |0|\\n|0.5|112|87|\\n| 1 | 100 |87|\\n| 2 | 94 |87|\\n| 3 | 90 |87|\\n| 4 | 87|87|\\n| 5 |87|87|\\n| 6 |87|87|\\n| 7 | 87|87|\\n| 8 | 87|87|\\n| 9 | 87|87|\\n| 10 | 87|87|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems that there is major overlap between all the species present between the two plasmas, so not a lot of different species are incorporated.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The highest intensity is measured at 660 nm.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The saturation time is 4 s.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No the intensity will not go to zero if the plasma is running there will always be the background of the peak in the H2 plasma itself.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":616,"height":526},{"panel_id":"b","x":0,"y":544,"width":624,"height":504}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/Mackus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"62","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":622,"height":1047,"image_format":"jpeg","image_sha256":"e86d867eef91644e3005982eba80b8e3ae5ec30fa2fdbbc76e0348f70bfdbe8c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG2_b.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG2_b","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG2_b","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"b\",\"text\":\"This figure presents Raman spectra of a material subjected to increasing durations of plasma exposure at a pressure of 850 mTorr. The x-axis shows the Raman shift (cm⁻¹), while the y-axis shows normalised intensity. Characteristic vibrational modes such as B₂g and Ag are labeled, with several peaks attributable to Al₂O₃. As exposure time increases (from 5 s to 80 s), the peak intensities for key vibrational modes gradually increase, particularly for Ag modes, indicating structural evolution or surface changes in the sample. The B₂g peak near 200 cm⁻¹ remains dominant, but secondary peaks become more prominent with longer exposure times, suggesting increasing crystallinity or improved signal collection as surface chemistry changes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Raman shift (cm⁻¹) | Intensity @ 5 s | 9 s | 15 s | 20 s | 30 s | 45 s | 60 s | 80 s |\\n|--------------------|----------------|------|------|------|------|------|------|------|\\n| 150 (Ag) | 0.20 | 0.22 | 0.25 | 0.28 | 0.32 | 0.35 | 0.38 | 0.40 |\\n| 200 (B₂g) | 1.00 | 1.00 | 0.98 | 0.97 | 0.95 | 0.93 | 0.90 | 0.88 |\\n| 250 (Ag) | 0.60 | 0.62 | 0.65 | 0.68 | 0.70 | 0.73 | 0.76 | 0.78 |\\n| 350 (B₂g) | 0.45 | 0.48 | 0.50 | 0.52 | 0.55 | 0.58 | 0.60 | 0.63 |\\n| 500 (Al₂O₃) | 0.20 | 0.22 | 0.23 | 0.24 | 0.26 | 0.28 | 0.30 | 0.33 |\\n| 750 (Al₂O₃) | 0.10 | 0.11 | 0.12 | 0.13 | 0.14 | 0.15 | 0.16 | 0.17 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With increasing plasma exposure time, the intensity of several vibrational peaks, particularly those associated with Ag and B₂g modes, steadily increases. This suggests that prolonged exposure enhances the structural order or surface modifications that amplify Raman-active vibrations. Notably, the B₂g peak near 200 cm⁻¹ remains consistently strong across all conditions, while other peaks such as those near 250, 350, and 500 cm⁻¹ gradually grow in intensity. This trend indicates a cumulative effect of plasma treatment on material structure, possibly linked to crystallinity or compositional changes.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"B₂g\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"5 s, 9 s, 15 s, 20 s, 30 s, 45 s, 60 s, 80 s\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"b","x":0,"y":0,"width":686,"height":550}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG2_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG2_b.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"b","first_classification_label":"multi spectra chart","caption_source":"not_found"},"width":686,"height":550,"image_format":"jpeg","image_sha256":"1ac48fed2b90460dd2877c9b718df676d50766f38eea892e4ca806686b97c4d9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG5_a.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG5_a","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG5_a","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This Raman spectra chart illustrates the vibrational modes of materials exposed to varying oxygen flow fractions through inductively coupled plasma (ICP). The three overlaid spectra correspond to O₂ flow fractions of 0.06, 0.29, and 0.53, with key Raman-active modes labeled along the spectral axis. Peaks corresponding to B₂g and A_g modes, as well as Al₂O₃, are clearly visible and consistent across all conditions, indicating that the overall structure remains stable across varying plasma environments. Minor differences in intensity at select peaks suggest possible changes in crystallinity or defect density influenced by oxygen content during deposition or treatment\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Raman Shift (cm⁻¹) | Normalized Intensity (a.u.) |\\n|--------------------|-----------------------------|\\n| 100 | 0.05 |\\n| 200 | 1.00 |\\n| 300 | 0.60 |\\n| 400 | 0.40 |\\n| 500 | 0.55 |\\n| 600 | 0.60 |\\n| 700 | 0.50 |\\n| 800 | 0.45 |\\n| 900 | 0.50 |\\n| 1000 | 0.60 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"increasing the O₂ flow fraction from 0.06 to 0.53 does not significantly alter the positions of the Raman peaks, indicating that the chemical structure and vibrational modes remain largely consistent. However, subtle variations in peak intensities are observed. These changes suggest minor modifications in the material’s crystallinity or defect states, likely due to different oxidation conditions during treatment. For example, a higher flow fraction might reduce the presence of carbon-related defects or enhance oxide formation, subtly affecting Raman-active modes without drastically shifting peak positions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"B₂g, A_g, and Al₂O₃ modes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"O₂ flow fraction, ICP 0.06, 0.29, 0.53\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":639,"height":500}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG5_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG5_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"not_found"},"width":639,"height":500,"image_format":"jpeg","image_sha256":"f19b0572718bfb83081ae60a0a5f45e0bd38df45ad259b449ee4bd1c7d832079","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG7_a.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG7_a","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG7_a","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents Raman spectra collected at varying pressures ranging from 850 mTorr to 5000 mTorr. The spectra show multiple sharp peaks corresponding to vibrational modes such as B₁g and Ag, as well as peaks attributed to Al₂O₃. As pressure increases, the overall spectral intensity decreases slightly, and peak shapes remain consistent, indicating preserved crystalline character. These pressure-dependent spectra are used to assess the effect of processing conditions on structural order.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Raman shift (cm⁻¹) | Intensity (a.u.) |\\n|---|---|\\n| 100 | 5000 mTorr |\\n| 200 | 3700 mTorr |\\n| 300 | 2500 mTorr |\\n| 400 | 1600 mTorr |\\n| 500 | 850 mTorr |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Raman spectra recorded at different pressures allow the researchers to monitor changes in the material's structural order or phase. Peaks corresponding to specific vibrational modes like B₁g and Ag indicate the crystalline nature of the sample. By comparing the intensity and shape of these peaks across pressures, one can assess whether the material undergoes structural degradation or enhancement. For example, consistent peak positions and intensities suggest stable bonding environments, while changes may imply amorphisation or phase transitions due to pressure-dependent processing\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Spectral inetensity decreases with increasing pressure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Identifies vibrational modes, Detects structural changes, Enables non-destructive composition analysis, Links processing to film quality\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":661,"height":556}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG7_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG7_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"not_found"},"width":661,"height":556,"image_format":"jpeg","image_sha256":"a4a729101d41106b38dc582ea2d85a07d5f1945ffdf81a39e0d07b0ef89b4b6b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG7_b.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG7_b","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG7_b","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"b\",\"text\":\"The Raman spectra compare vibrational modes observed under inductively and capacitively coupled plasma conditions at 5000 mTorr. Notably, the capacitively coupled case (purple line) shows substantially higher intensity peaks across the full spectral range, especially at positions labeled Ag, B₁g, and Al₂O₃. These peaks are associated with specific phonon modes and bonding environments, and their enhancement under capacitively coupled conditions suggests improved crystalline ordering or a higher density of Raman-active bonds. The inductively coupled plasma yields comparatively weak Raman signals, indicating either a more amorphous structure or a lower scattering cross-section in this condition.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Raman shift (cm⁻¹) | Intensity - Inductive (a.u.) | Intensity - Capacitive (a.u.) |\\n|-------------------|------------------------------|-------------------------------|\\n| 100 | 0.00 | 0.00 |\\n| 150 | 0.05 | 0.30 |\\n| 200 | 0.08 | 0.60 |\\n| 250 | 0.06 | 0.45 |\\n| 300 | 0.05 | 0.40 |\\n| 350 | 0.04 | 0.38 |\\n| 400 | 0.03 | 0.35 |\\n| 450 | 0.03 | 0.32 |\\n| 500 | 0.02 | 0.28 |\\n| 600 | 0.02 | 0.24 |\\n| 700 | 0.01 | 0.20 |\\n| 800 | 0.01 | 0.15 |\\n| 900 | 0.00 | 0.10 |\\n| 1000 | 0.00 | 0.05 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The capacitively coupled condition results in much stronger Raman peaks across the spectrum, particularly at positions corresponding to Ag and B₁g modes. This suggests a higher degree of crystallinity or more pronounced vibrational coherence in the material. In contrast, the inductively coupled condition shows significantly lower intensities, indicating a more amorphous or disordered structure. This comparison highlights how the type of plasma coupling directly influences material structure and vibrational activity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The B₁g peak near 200 cm⁻¹\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Higher crystallinity, Stronger phonon activity, Improved ordering, Suitable for optoelectronics\"}]}]","bbox":[{"panel_id":"b","x":0,"y":0,"width":683,"height":556}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG7_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG7_b.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"b","first_classification_label":"multi spectra chart","caption_source":"not_found"},"width":683,"height":556,"image_format":"jpeg","image_sha256":"d650ebdba2e572cd09792f25ac14d4219460a692f3cf9a81896c35565dc960d9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_33_figure_1.jpg","caption":"Figure 1. XPS spectra of the core level C 1s of a) pristine graphene (after transfer to $\\mathrm{SiO}_2$ ), b) graphene after a $30\\mathrm{s}\\mathrm{O}_2$ plasma treatment, and c) graphene after a $35\\mathrm{s}\\mathrm{H}_2$ plasma treatment at a pressure of $50\\mathrm{mTorr}$ and a plasma power of $100\\mathrm{W}$ .","id":"test/atomic-layer-deposition/simulation-usecase/33/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/33/figure_1","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the binding energy spectrum of pristine graphene, with contributions from sp², C-O, plasmon 1, and plasmon 2.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the binding energy spectrum of material treated with 30 seconds of O₂ plasma, with contributions from sp², sp³, C-O, and C=O.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the binding energy spectrum of material treated with 35 seconds of H₂ plasma, with contributions from sp², sp³, C-O, and C=O.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy, eV | Component | Peak Intensity (normalized) |\\n|---|---|---|\\n| 284.4 | sp² | 0.88 |\\n| 285.5 | C-O | 0.05 |\\n| 286.5 | Plasmon 1 | 0.08 |\\n| 290.5 | Plasmon 2 | 0.02 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy, eV | Component | Peak Intensity (normalized) |\\n|---|---|---|\\n| 284.4 | sp² | 0.55 |\\n| 285.0 | sp³ | 0.55 |\\n| 286.2 | C-O | 0.35 |\\n| 287.5 | C=O | 0.22 |\"},{\"panel_id\":\"c\",\"text\":\"| Binding Energy, eV | Component | Peak Intensity (normalized) |\\n|---|---|---|\\n| 284.4 | sp² | 0.60 |\\n| 285.0 | sp³ | 0.58 |\\n| 286.2 | C-O | 0.38 |\\n| 287.5 | C=O | 0.08 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The red curve is the fitted model of the measured XPS C 1s spectrum, constructed from the colored component peaks plus background.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After O2 plasma, the C O contribution increases, an sp3 component appears near 284.6 eV, and a C=O component appears near 289.0 eV, while the plasmon loss features seen in pristine graphene are no longer observed. After H2 plasma, the dominant change is a strong increase in sp3 bonding with a corresponding decrease in sp2 bonding, and there is also an increase in C O signal.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"H2 plasma: the spectrum shows strong sp3 formation attributed to hydrogenation, which the paper links to reversibility upon subsequent processing and annealing. \\n\\nO2 plasma: the spectrum shows added oxygen containing bonding, including C=O, consistent with more permanent chemical modification and loss of plasmon features, which the paper associates with less reversible changes.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increased sp3 contribution indicates that part of the graphene basal plane has been converted from sp2 bonding to sp3 like bonding due to plasma functionalization. For O2 plasma this coincides with oxygen containing groups such as C O and C=O, consistent with chemical modification and disruption of the pristine sp2 network. For H2 plasma, the paper attributes the sp3 increase primarily to hydrogenation, which is not directly visible as C H in XPS but is consistent with the observed sp2 to sp3 shift.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":7,"width":626,"height":436},{"panel_id":"b","x":9,"y":444,"width":613,"height":426},{"panel_id":"c","x":9,"y":864,"width":606,"height":426}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":622,"height":1295,"image_format":"jpeg","image_sha256":"e6e5c83b40a7663c8ed74f4aef8b02b58c7c071548f72864eb9e2264f6aca4c4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_34_figure_10.jpg","caption":"Figure 10. DFT/vdW-DF2 level orbital-projected density of states (DOS) per atom of free-standing and Pt(111)-contacted a) pristine graphene (PG), b) graphene oxide (GO), and c) hydrogenated graphene (SSHG). The model systems used are depicted in the inset of each graph (Pt: light gray, C: dark gray, H: white, O: red). The Fermi level of each system is set to zero (dashed vertical line). Each of the DOS curves is averaged over all atoms contributing to the individual DOS plot (e.g., C, O, and/or H, see legends for actual compositions). The gray shaded areas show the sum of contributions from the individual atomic orbital types.","id":"test/atomic-layer-deposition/simulation-usecase/34/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/34/figure_10","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"},{"panel_id":"e","label":"multi spectra chart"},{"panel_id":"f","label":"multi spectra chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":5,"width":556,"height":410},{"panel_id":"b","x":565,"y":8,"width":568,"height":410},{"panel_id":"c","x":2,"y":433,"width":552,"height":370},{"panel_id":"d","x":600,"y":441,"width":522,"height":361},{"panel_id":"e","x":6,"y":817,"width":554,"height":359},{"panel_id":"f","x":596,"y":825,"width":522,"height":355}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1164,"height":1183,"image_format":"jpeg","image_sha256":"9655f4e9191d9b74303d47573d04dbccd299a8b5182283853d0887ae21b23574","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_34_figure_12.jpg","caption":"Figure 12. GGA/vdW-DF2 level atom-projected DOS of PG and SSHG that are a) edge-contacted or b) top-contacted to Pt metal. Insets show the models used for the calculations. Contributions by atomic orbitals of C, H, and Pt are given by diverse colors. Pt–d orbital contributions are not shown for clarity. See Figure 8 caption for other details.","id":"test/atomic-layer-deposition/simulation-usecase/34/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/34/figure_12","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":8,"width":676,"height":475},{"panel_id":"b","x":716,"y":6,"width":608,"height":472},{"panel_id":"c","x":10,"y":498,"width":666,"height":418},{"panel_id":"d","x":735,"y":502,"width":589,"height":418}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1337,"height":925,"image_format":"jpeg","image_sha256":"f84229a5dd8a7671bf500c1c05c1c39c01ffa1b7362a539333b8959165b8a3e3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_34_figure_2.jpg","caption":"Figure 2. Raman spectra obtained after different plasma treatments for a) $\\mathsf{H}_{2}$ plasma treatments ranging from 2 to 8 min and b) $\\Omega_2$ plasma treatments from 1 to 5 min. The Raman spectrum of pristine graphene is also added as reference. The Raman spectra are normalized to the highest peak (D band at $1350cm^{-1}$ or 2D band at $2690cm^{-1}$ and are vertically offset for clarity.","id":"test/atomic-layer-deposition/simulation-usecase/34/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/34/figure_2","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the C 1s XPS spectrum of pristine graphene, with contributions from C sp², plasmon peaks, and C-O bonds.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the C 1s XPS spectrum of H₂ plasma treated graphene for 5 minutes, with contributions from C sp² and C sp³.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the C 1s XPS spectrum of O₂ plasma treated graphene for 5 minutes, with contributions from C sp², C sp³, C-O, and C=O.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Component | Binding Energy (eV) |\\n|---|---|\\n| C sp^2 | Peak at 284.5 |\\n| Plasmon 1 | Peak at 290 |\\n| Plasmon 2 | Peak at 293 |\\n| C-O | Peak at 286.5 |\"},{\"panel_id\":\"b\",\"text\":\"| Component | Binding Energy (eV) |\\n|---|---|\\n| C sp^2 | Peak at 284.5 |\\n| C sp^3 | Peak at 285 |\"},{\"panel_id\":\"c\",\"text\":\"| Component | Binding Energy (eV) |\\n|---|---|\\n| C sp^2 | Peak at 284.5 |\\n| C sp^3 | Peak at 285 |\\n| C-O | Peak at 286.5 |\\n| C=O | Peak at 289 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1) Pristine graphene, 2) H2-plasma treated graphene (5 min) and 3) O2-plasma treated graphene\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This may be related to residual polymer residue in the sample or surface groups present at defects/surface sites.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 23%.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Epoxy groups (C-O-C), hydroxyl groups (C-OH), carbonyl groups (C=O)\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":660,"height":512},{"panel_id":"b","x":2,"y":514,"width":662,"height":512},{"panel_id":"c","x":0,"y":1026,"width":664,"height":503}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":667,"height":1531,"image_format":"jpeg","image_sha256":"f529518e8c6ed947a8b33705cfe75187ad320f889b9b14616173737df953026b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_40_fig_3.jpg","caption":"Fig. 3. a) X-ray diffraction patterns and b) texture coefficients of $\\mathrm{ZnO}$ films deposited with different $\\mathbb{N}_2$ bubbling flows through DEZ, $f_{DEZ}$","id":"test/atomic-layer-deposition/simulation-usecase/40/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/40/fig_3","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This panel presents XRD patterns of ZnO films deposited by spatial ALD under different N₂ bubbling flows through DEZ. Increasing DEZ exposure leads to stronger and sharper diffraction peaks, indicating improved crystallinity, with high exposure favoring the ZnO (002) reflection, characteristic of c-axis–oriented growth.\"},{\"panel_id\":\"b\",\"text\":\"This panel shows texture coefficients for ZnO (002), (100), (101), and (110) planes as a function of DEZ bubbling flow. The (002) texture increases markedly at higher flows, while the (101) contribution decreases, demonstrating that precursor exposure directly controls preferred crystal orientation in SALD-grown ZnO films.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The enhancement of (002)-oriented growth at higher precursor exposure improves c-axis alignment, which is beneficial for applications requiring high electron mobility, piezoelectric response, and optical transparency. Controlled texture engineering through DEZ exposure in spatial ALD enables tailoring of ZnO film properties for optoelectronic devices, sensors, and transparent conductive coatings while maintaining low-temperature processing compatibility.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Increasing dominance of the ZnO (002) diffraction peak, Reduction of the ZnO (101) texture contribution, Enhanced crystallinity with sharper diffraction peaks, Exposure-dependent orientation competition among ZnO planes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ZnO (002) texture coefficient increases significantly at higher DEZ bubbling flows, becoming dominant above approximately 30 sccm.\"}]}]","bbox":[{"panel_id":"a","x":80,"y":17,"width":584,"height":586},{"panel_id":"b","x":719,"y":139,"width":30,"height":325}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/Viet Huong Nguyen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1387,"height":668,"image_format":"jpeg","image_sha256":"ca7bebd56f3ad9c7519c5060c2647bc3c4642d9328fc27ffb401fcdbc6185544","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_12_fig_1.jpg","caption":"FIG. 1. Difference infrared spectra collected at $250^{\\circ}\\mathrm{C}$ , in which a decrease in absorption corresponds to the removal of species, while an increase in absorption represents the formation of species. Graph (a) shows the broad absorbance region between 800 and $1100\\mathrm{~cm}^{-1}$ corresponding to $\\mathrm{Al} - \\mathrm{O}$ in the film. These spectra are taken after each $\\mathrm{SF}_6$ plasma/TMA ALE cycle and are referenced to the as-deposited $\\mathrm{Al}_2\\mathrm{O}_3$ spectrum taken prior to the $\\mathrm{Al}_2\\mathrm{O}_3$ cycles. Graph (b) shows the $\\mathrm{AlCH}_3$ absorbance peaks at 2900 and $2950\\mathrm{~cm}^{-1}$ . Spectra were recorded after each $\\mathrm{SF}_6$ plasma and TMA half-cycle and are referenced to the previous half-cycle.","id":"test/atomic-layer-etching/experimental-usecase/12/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/12/fig_1","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The spectral chart shows the infrared spectra collected at 250 °C, highlighting the broad absorbance region between 800 and 1100 cm⁻¹ corresponding to Al–O vibrations in the film. These spectra were recorded after each SF₆ plasma/TMA ALE cycle and referenced to the as-deposited Al₂O₃ spectrum taken prior to the ALE cycles. The figure displays absorbance spectra across the wavenumber range for cycles 1 through 6, showing changes in absorbance at specific wavenumbers.\"},{\"panel_id\":\"b\",\"text\":\"The spectral chart shows the Al–CH₃ absorbance peaks at 2900 and 3500 cm⁻¹. The spectra were recorded after each SF₆ plasma and TMA half-cycle and are referenced to the spectrum from the previous half-cycle. The figure compares the absorbance spectra for TMA-referenced to SF₆ plasma(blue line) and SF₆-plasma-referenced to TMA(red line) for cycles 2, 4, and 6. Sharp absorbance peaks were observed close to 2900 to 2950 cm⁻¹.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Cycle 1 | Cycle 2 | Cycle 3 | Cycle 4 | Cycle 5 | Cycle 6 |\\n|--------------------|---------|---------|---------|---------|---------|---------|\\n| 1000 | 0.002 | 0.0018 | 0.0016 | 0.0014 | 0.0012 | 0.0010 |\\n| 900 | 0.0018 | 0.0016 | 0.0014 | 0.0012 | 0.0010 | 0.0008 |\\n| 800 | 0.0016 | 0.0014 | 0.0012 | 0.0010 | 0.0008 | 0.0006 |\"},{\"panel_id\":\"b\",\"text\":\"| Wavenumber (cm⁻¹) | Cycle 2 (Blue) | Cycle 2 (Red) | Cycle 4 (Blue) | Cycle 4 (Red) | Cycle 6 (Blue) | Cycle 6 (Red) |\\n|--------------------|-----------------|---------------|-----------------|---------------|-----------------|---------------|\\n| 3000 | +0.005 | -0.005 | +0.005 | -0.005 | +0.005 | -0.005 |\\n| 2800 | +0.004 | -0.004 | +0.004 | -0.004 | +0.004 | -0.004 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"AlCH3 symmetric and asymmetric stretching modes after SF6 plasma and TMA half cycle are studied, as a funcion of the number of cycles (2,4, and 6).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SF6 plasma.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"These peaks correspond to the symmetric and asymmetric stretching modes of AlCH3 groups on the surface, which form after TMA dosing.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TMA methylates the surface of the film. It is indicated by the appearance of Al–CH₃ bands after the TMA step. These Al–CH₃ features are not present after the SF₆ plasma half-step, showing that the methyl species are not coming from the plasma exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Methyl-groups.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 2900 and 2950 cm^-1.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Sub-figure b shows how the absorbance has changed after SF6 exposure with a reference spectrum taken after TMA exposure (blue). The reverse is also shown in red. The baseline of these two difference spectra is marked by the dashed line. As the blue and red lines are almost perfect mirror images (relative to the dashed line), this tells us that SF6 and TMA successfully react to remove and form methyl surface groups during each half cycle respectively.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Following TMA dosing, AlCH3 surface species are observed as indicated by an increase in the CH3 absorbance peak. These methyl groups are thought to be\\nformed after removal of the fluorinated surface layer, allowing excess TMA to adsorb on the bulk Al2O3. After SF6 plasma exposure, a negative CH3 peak is observed, indicating the removal of surface methyl groups, which is attributed to ligand exchange reactions between methyl groups and fluorine atoms.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 250 °C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The data supports this because the absorbance peaks for Cycles 2, 4, and 6 are nearly identical in intensity and shape. This repeatability implies a constant \\\"Etch Per Cycle\\\" (EPC) without significant drift, allowing engineers to precisely control the total etch depth simply by counting the number of cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the TMA half-cycle (blue lines), positive absorbance peaks appear at 2900 and 2950 cm⁻¹, corresponding to AlCH₃ symmetric and asymmetric stretching modes, which indicates that TMA adsorbs onto the surface and methylates it. Conversely, during the SF₆ plasma half-cycle (red lines), these same peaks appear as negative features. This indicates the removal of the methyl groups introduced in the previous step, likely replaced by fluorine atoms from the plasma radicals, consistent with a ligand-exchange mechanism.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"These peaks correspond to the symmetric and asymmetric stretching vibrations of methyl groups (–CH₃) bonded to aluminum (AlCH₃ surface species).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TMA exposure introduces surface-bound methyl ligands through ligand-exchange reactions with fluorinated aluminum sites. These –CH₃ groups are transient and serve as intermediates rather than permanent surface species. The following SF₆ plasma step removes the methyl ligands, returning the C–H region to baseline and regenerating a fluorinated surface. This reversible behavior indicates clean, self-limiting surface chemistry without carbon accumulation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It indicates complete ligand removal each cycle, preventing carbon buildup and enabling repeatable ALE behavior.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The specific wavenumber is related to -OH groups. It could indicate the adsorption of TMA on these groups.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The SF6 plasma removes surface methyl groups resulting in a decrease of the AlCH3 peaks due to ligand exchange reactions with fluorine atoms, Formation of Al–F bonds and surface fluorination further suppress Al–CH₃ related vibrational features in the FTIR spectra.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"6 cycles\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Al-O absorbance band decreses with increasing the number of cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Al-O absorbance decreases for increasing cycle number indicating that there is less Al2O3, meaning there is etching.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems that the wavenumber range around 850 cm-1 does not have the same fluctuation each cycle, indicating that there is a difference.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, this could be as not every vibrations is as likely to occur, which means that differences in absorption for different wavenumbers do not have to be the same.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Al–O absorbance decreases monotonically with increasing cycle number.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The absorbance of the Al–O band, located between 800 and 1100 cm⁻¹, systematically decreases with each subsequent ALE cycle, as indicated by the arrow labeled \\\"Increasing Cycles.\\\" Since infrared absorbance in this region is proportional to the amount of Al–O bonds present, this reduction signifies the layer-by-layer removal of the Al₂O₃ film, confirming that the process is indeed etching the material.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Initial Al₂O₃ surface (reference, 0 cycles).\\n\\nSF₆ plasma converts surface Al-O to Al-F, reducing Al-O absorbance.\\n\\nTMA reacts with Al-F, releasing volatile products and potentially leaving some Al-CH₃.\\n\\nRepeated cycles progressively alter the near-surface oxide structure, changing the Al-O absorbance signature as seen in the growing, shifted peaks.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The shifting peak indicates a change in the local bonding environment of aluminum and oxygen. The initial Al₂O₃ has a specific crystalline or amorphous structure. The cyclic fluorination and ligand exchange likely create a modified, possibly disordered or fluorine-incorporated, oxyfluoride surface layer (AlOₓFᵧ), which has different vibrational energies than pure Al₂O₃. This maps directly to a change in the material's etch susceptibility.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The decrease in absorbance in this region maps directly to the breaking of Al–O bonds and the subsequent reduction in film thickness, confirming that bulk material is being removed layer-by-layer.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The intensity of the absorbance decreases with increasing cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The absorbance decreases with the increasing number of ALE cycles, which corresponds to the removal of material after each ALE cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SF6.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Al–O band shows a progressive decrease in absorbance from cycle 1 to cycle 6. This indicates a reduction in Al–O–containing material relative to the initial film. The monotonic decline is consistent with cumulative etching of Al₂O₃ over successive cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The absorbance increases with increasing cycle number, particularly in the Al–O related region, indicating progressive accumulation or modification of surface species during repeated cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Wavenumber (cm⁻¹).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, A decrease in absorption corresponds to the removal of species from the Al2O3 surface, such as the Al–O bonds removed during each SF6 plasma/TMA ALE cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In Figure (a), spectra are referenced to the as-deposited Al2O3 film before ALE cycles. In figure (b), spectra are referenced to the previous half-cycle to highlight changes after each TMA or SF6 plasma exposure.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The Al–O related band region, The C–H stretching region\"}]}]","bbox":[{"panel_id":"a","x":4,"y":4,"width":318,"height":552},{"panel_id":"b","x":317,"y":9,"width":283,"height":550}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":602,"height":559,"image_format":"jpeg","image_sha256":"d99668497736a87434a6d230d86b5684f969a8ce122ef1c4f82d235aee28bc26","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_1.jpg","caption":"Figure 1. FTIR spectra during AlN ALD with TDMAA and $\\mathrm{NH}_3$ as the reactants at $400^{\\circ}\\mathrm{C}$ after 40, 80, 120, and 160 ALD cycles.","id":"test/atomic-layer-etching/experimental-usecase/20/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_1","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays the absorbance spectra of AlN ALD samples prepared using TDMAA & NH₃ at 400°C, with varying cycles (40, 80, 120, and 160).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | 160 cycles | 120 cycles | 80 cycles | 40 cycles |\\n|---|---|---|---|---|\\n| 1400 | - | - | - | - |\\n| 1200 | - | - | - | - |\\n| 1000 | peak at 1880 cm-1 | peak at 1880 cm-1 | peak at 1880 cm-1 | peak at 1880 cm-1 |\\n| 800 | - | - | - | - |\\n| 600 | peak at 645 cm-1| peak at 645 cm-1 | peak at 645 cm-1 | peak at 645 cm-1 |\\n| 400 | - | - | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After 40 cycles of TDMAA and NH3, then at 80, 120 and 160.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of TDMAA and NH3 increases, so does the intensity of the absorption at 645 cm-1.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After 40 cycles of TDMAA and NH3 the peak intensity is the lowest.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the deposition cycle increases, more molecules are deposited onto the surface. Consequently, more molecules can absorb energy at different wavenumber, which increase the peak intensity.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":8,"width":658,"height":536}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":664,"height":544,"image_format":"jpeg","image_sha256":"b7ee801af61cfbcc0f2786df46d56dada64d6335b0d4ab436dae2af8679b9906","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_10.jpg","caption":"Figure 10. XPS spectra in the Al 2p region after (a) $\\mathrm{XeF}_2$ exposure and (b) $\\mathrm{BCl}_3$ exposure during thermal AlN ALE.","id":"test/atomic-layer-etching/experimental-usecase/20/figure_10","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_10","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the spectral response of Al-N after XeF2 treatment, with a fitted curve overlaid. Also, Al-N bond is highlighted at 73.6 eV.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the spectral response of Al-F after BCl3 treatment, with a fitted curve overlaid. Also, Al-F bond is highlighted at 77.0 eV.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| B. E. (eV) | Counts |\\n| --- | --- |\\n| 85 | - |\\n| 80 | peak at 77 eV, 78 eV|\\n| 75 | peak at 74 eV |\\n| 70 | peak at 73 eV |\"},{\"panel_id\":\"b\",\"text\":\"| B. E. (eV) | Counts |\\n| --- | --- |\\n| 85 | - |\\n| 80 | - |\\n| 75 | - |\\n| 70 | peak at 73 eV |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The XPS technique is used to study the chemical state of the Al on the AlN surface during the ALE cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After XeF2 exposure, 4 species are present on the surface.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The subfigure b, where the AlN peak can be observed at 73.6 eV.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Exposure to BCl3 results in the removal of AlF3 from the surface, leaving only AlN.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":1,"width":658,"height":279},{"panel_id":"b","x":1,"y":285,"width":658,"height":308}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":661,"height":597,"image_format":"jpeg","image_sha256":"f40bc52458f8e78b60e5cb7e175fad9bfb790411ef512b2742c944ea20821d7e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_2.jpg","caption":"Figure 2. FTIR spectra during thermal AlN ALE with HF and $\\mathrm{BCl}_3$ as the reactants at $350^{\\circ}\\mathrm{C}$ after various numbers of ALE cycles.","id":"test/atomic-layer-etching/experimental-usecase/20/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_2","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the absorbance spectra of AlN ALE samples prepared using HF & BCl₃ at 350°C, with different number of cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | 1 cycle | 3 cycles | 12 cycles | 15 cycles | 27 cycles |\\n|------------------|------------|------------|------------|------------|------------|\\n| 1400 | - | - | - | - | - |\\n| 1200 | - | - | - | - | - |\\n| 1000 | - | - | - | - | - |\\n| 800 | - | - | - | - | - |\\n| 600 | - | peak at 650 | peak at 650 | peak at 650 | peak at 650 |\\n| 400 | - | - | - | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"FTIR are measured at least for 1, 3, 12, 15, and 27 ALE cycle with HF and BCl3.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of cycles increases, so does the absorbance intensity, reaching more natives values.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After one cycle of HF and BCl3, there is still no peak at 650 cm-1.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It could be caused by some BN formation.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":659,"height":441}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":661,"height":447,"image_format":"jpeg","image_sha256":"bbbd9368968ddeee87649e9958aba9ee32633bdb559fbad5b9e2f34b75e294ea","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_3.jpg","caption":"Figure 3. FTIR difference spectra after (a) HF exposure and (b) $\\mathrm{BCl}_3$ exposure during the 10th cycle of thermal AlN ALE at $350^{\\circ}\\mathrm{C}$ . Each spectrum is referenced to the spectrum after the previous exposure.","id":"test/atomic-layer-etching/experimental-usecase/20/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_3","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays infrared absorption spectra for two samples labeled as HF-BCl₃ and BCl3-HF, at 350°C during the 10th cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | HF-BCl3 | BCl3-HF |\\n| --- | --- | --- |\\n| 1750 | - | - |\\n| 1500 | - | - |\\n| 1250 | B-N | B-N |\\n| 1000 | - | - |\\n| 750 | Al-N | Al-F |\\n| 500 | - | Al-F |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Changes that occur ruing each exposure of the reactant can be observed through the vibrational modes at different wavenumber values.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Below 750 cm-1, Al-N and Al-f can be observed.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The absorbance spectra of BCl3 exposure show a positive peak related to the formation of the B-N bond at around 1250 cm-1.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This is due to the overlap between Al-N and Al-F.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":5,"width":662,"height":517}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":667,"height":525,"image_format":"jpeg","image_sha256":"5590ff6346845e70b16bd24c70a58b00cff554eb7d2643ea92c26d6a815f81f2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_10.jpg","caption":"Fig. 10. Mass spectra from $m / z$ 235 to 263 showing ion signal intensities for Co $(\\mathrm{acac})_2$ etch product during Hacac exposures on (a) CoO and (b) $\\mathrm{Co_3O_4}$ powders at $250^{\\circ}C$ Largest ion signals are observed for $\\mathrm{Co(acac)}_{2}^{+}$ and Co $(\\mathrm{acac})(\\mathrm{C_4H_4O_2})^+$","id":"test/atomic-layer-etching/experimental-usecase/21/fig_10","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_10","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays mass-to-charge ratio (m/z) on the x-axis and intensity in arbitrary units on the y-axis for Co3O3 and CoO at 250 °C. It shows peaks corresponding to various chemical species at specific m/z values.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| m/z | Co3O4 | CoO |\\n| --- | --- | --- |\\n| 236 | peak at 239 | peak at 239 |\\n| 240 | peak at 242, 243 | peak at 242, 243 |\\n| 244 | - | - |\\n| 248 | peak at 250 | - |\\n| 252 | peak at 252 | peak at 252 |\\n| 256 | peak at 257, 258 | peak at 257, 258 |\\n| 260 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows the mass spectra from m/z between 235 to 263 for Co3O4 and CoO at 150 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The peak intensity changes with the m/z ratio, but the most significant difference is due to the sample. Co3O4 shows higher intensity peaks compared to CoO.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The highest peak is shown at 275 and corresponds to the Co(acac)2+ species.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It can be useful for identifying the species involved in the reaction.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":664,"height":605}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":670,"height":609,"image_format":"jpeg","image_sha256":"0a7d81cb3fc20a05de1767278633fa2ebd3015507b8ae374e3895949b7d9ee0b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_3_figure_3.jpg","caption":"Figure 3. XPS data of Mo, S, and Cl on the $\\mathrm{MoS_2}$ surface after Cl-radical adsorption and during $\\mathrm{Ar^{+}}$ -ion desorption of $\\mathrm{MoS_2}$ ALE. (a) XPS data of the pristine bilayer $\\mathrm{MoS_2}$ before and after Cl-radical adsorption. (b) XPS data of Cl before/after Cl-radical adsorption and after the $\\mathrm{Ar^{+}}$ -ion exposure time of $0 - 200\\mathrm{s}$ XPS data of Mo and S after the $\\mathrm{Ar^{+}}$ -ion exposure of the Cl-adsorbed bilayer $\\mathrm{MoS_2}$ for (c) 0, 15, 30 s, (d) 30, 45, 60 s, (e) 60, 90, $120~\\mathrm{s},$ and (f) $120,200\\mathrm{s},$ and pristine bilayer $\\mathrm{MoS_2}$","id":"test/atomic-layer-etching/experimental-usecase/3/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/3/figure_3","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"},{"panel_id":"e","label":"multi spectra chart"},{"panel_id":"f","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows XPS spectra of Mo 3d // S 2p for pristine bilayer and after Cl adsorption.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays XPS spectra of Cl 2p for pristine bilayer and various Ar exposure times.\"},{\"panel_id\":\"c\",\"text\":\"The figure presents XPS spectra of Mo 3d // S 2p after Cl adsorption and Ar exposure times.\"},{\"panel_id\":\"d\",\"text\":\"The figure shows XPS spectra of Mo 3d // S 2p after several Ar exposure times.\"},{\"panel_id\":\"e\",\"text\":\"The figure displays XPS spectra of Mo 3d // S 2p after several Ar exposure times.\"},{\"panel_id\":\"f\",\"text\":\"The figure presents XPS spectra of Mo 3d // S 2p after Ar exposure times and for a pristine bilayer.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding energy (eV) | Intensity (a.u.) |\\n|---|---|\\n| 233 | 3d3/2 |\\n| 229 | 3d5/2 |\\n| 227 | S-Mo-S |\\n| 163 | 2p1/2 |\\n| 162 | 2p3/2 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding energy (eV) | Intensity (a.u.) |\\n|---|---|\\n| 204 | 0 |\\n| 201 | 2p1/2 |\\n| 200 | 2p3/2 |\\n| 198 | 0 |\\n| 164 | 0 |\\n| 162 | 0 |\"},{\"panel_id\":\"c\",\"text\":\"| Binding energy (eV) | Intensity (a.u.) |\\n|---|---|\\n| 234 | 3d3/2 |\\n| 229 | 3d5/2 |\\n| 227 | S-Mo-S |\\n| 163 | 2p1/2 |\\n| 162 | 2p3/2 |\"},{\"panel_id\":\"d\",\"text\":\"| Binding energy (eV) | Intensity (a.u.) |\\n|---|---|\\n| 234 | 3d3/2 |\\n| 229 | 3d5/2 |\\n| 227 | S-Mo-S |\\n| 163 | 2p1/2 |\\n| 162 | 2p3/2 |\"},{\"panel_id\":\"e\",\"text\":\"| Binding energy (eV) | Intensity (a.u.) |\\n|---|---|\\n| 234 | 3d3/2 |\\n| 229 | 3d5/2 |\\n| 227 | S-Mo-S |\\n| 163 | 2p1/2 |\\n| 162 | 2p3/2 |\"},{\"panel_id\":\"f\",\"text\":\"| Binding energy (eV) | Intensity (a.u.) |\\n|---|---|\\n| 234 | 3d3/2 |\\n| 229 | 3d5/2 |\\n| 227 | S-Mo-S |\\n| 163 | 2p1/2 |\\n| 162 | 2p3/2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This only happens slightly, however the S-Mo-S peak does seem to be removed more, indicating that the sulfur is no longer bonded to Mo.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sulfur peaks decrease whereas the molybdenum peaks remain constant, so the sulfur is selectively etched.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The intensities of a bilayer MoS2 are equal to those of a Monolayer, so the should converge back to the pristine one.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All peaks are equally removed by the argon plasma, so no this is not the case.\"}]}]","bbox":[{"panel_id":"a","x":9,"y":0,"width":449,"height":370},{"panel_id":"b","x":470,"y":11,"width":440,"height":360},{"panel_id":"c","x":921,"y":0,"width":458,"height":373},{"panel_id":"d","x":9,"y":393,"width":447,"height":359},{"panel_id":"e","x":469,"y":393,"width":452,"height":359},{"panel_id":"f","x":933,"y":393,"width":446,"height":361}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/Atomic Layer Etching Mechanism of MoS2 for Nanodevices.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1380,"height":755,"image_format":"jpeg","image_sha256":"1aa6b72dfa56e12fb3c257da44097463184b599b13654489a7f3d15df55be2c3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_35_fig_2.jpg","caption":"FIG. 2. Expected equilibrium species determined by thermodynamic modeling in the temperature range from 25 to $400^{\\circ}C$ for [a) and (e)] 1 mol $\\mathrm{TiO_2 / ZrO_2}$ and 1 mol $\\mathsf{WF}_6$ b and (f)] 0.75 mol $\\mathrm{TiO_2 / ZrO_2}$ and 1 mol $\\mathsf{BCl}_3,$ c and (g)] 0.5 mol $\\mathrm{TiO_2 / ZrO_2}$ and 1 mol $\\mathrm{SOCl}_2$ and [(d) and (h)] 1 mol $\\mathrm{TiO_2 / ZrO_2}$ and 1 mol $\\mathrm{TiCl_4}$","id":"test/atomic-layer-etching/experimental-usecase/35/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/35/fig_2","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"},{"panel_id":"e","label":"multi spectra chart"},{"panel_id":"f","label":"multi spectra chart"},{"panel_id":"g","label":"multi spectra chart"},{"panel_id":"h","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Equilibrium concentration profiles for the TiO₂ + WF₆ system show that at lower temperatures TiF₄(s) and WO₃(s) are favored, while increasing temperature promotes the formation of volatile TiF₄(g) and WF₂O₂(g), indicating thermally activated fluorination and oxide conversion.\"},{\"panel_id\":\"b\",\"text\":\"In the TiO₂ + BCl₃ system, the equilibrium concentrations remain nearly constant over the temperature range, with stable formation of TiCl₄(g) and B₂O₃(s), suggesting limited temperature dependence and a less aggressive halogenation reaction.\"},{\"panel_id\":\"c\",\"text\":\"For the TiO₂ + SOCl₂ reaction, SO₂(g) and TiCl₄(g) dominate across the entire temperature range, indicating efficient chlorination of TiO₂ with gaseous byproduct formation and minimal solid residue evolution.\"},{\"panel_id\":\"d\",\"text\":\"The TiO₂ + TiCl₄ equilibrium shows no significant reaction progress with temperature, as TiO₂(s) and TiCl₄(g) remain stable, confirming the absence of a driving force for further chemical transformation in this system.\"},{\"panel_id\":\"e\",\"text\":\"In the ZrO₂ + WF₆ system, ZrF₄(s) and WO₃(s) are stable at low temperatures, while higher temperatures favor the formation of volatile WF₂O₂(g), demonstrating temperature-dependent fluorination behavior similar to TiO₂ but with different stability ranges.\"},{\"panel_id\":\"f\",\"text\":\"The ZrO₂ + BCl₃ equilibrium reveals a sharp transition from solid ZrCl₄(s) to gaseous ZrCl₄(g) with increasing temperature, indicating sublimation-driven volatility and strong temperature sensitivity of zirconium chlorides.\"},{\"panel_id\":\"g\",\"text\":\"For the ZrO₂ + SOCl₂ system, increasing temperature leads to the conversion of solid zirconium sulfate and chloride species into gaseous ZrCl₄ and SO₂, highlighting complex intermediate formation followed by volatile product dominance.\"},{\"panel_id\":\"h\",\"text\":\"In the ZrO₂ + TiCl₄ system, multiple solid intermediates such as ZrOCl₂(s) and Zr₂O₃Cl₂(s) appear at intermediate temperatures before stabilizing as ZrO₂(s), indicating competitive chlorination and oxygen exchange reactions\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature range | TiF4(s) | TiF4(g) | WO3(s) | WF6(g) | WF2O2(g) |\\n|-------------------|---------|---------|--------|--------|----------|\\n| Low T | High | 0 | High | Medium | 0 |\\n| Mid T | ↓ | ↑ | ↓ | ↓ | ↑ |\\n| High T | 0 | High | 0 | 0 | High |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature range | TiCl4(g) | B2O3(s) |\\n|-------------------|----------|---------|\\n| All T | High | Medium |\"},{\"panel_id\":\"c\",\"text\":\"| Temperature range | SO2(g) | TiCl4(g) |\\n|-------------------|--------|----------|\\n| All T | High | Medium |\"},{\"panel_id\":\"d\",\"text\":\"| Temperature range | TiCl4(g) | TiO2(s) |\\n|-------------------|----------|---------|\\n| All T | High | High |\"},{\"panel_id\":\"e\",\"text\":\"| Temperature range | ZrF4(s) | WO3(s) | WF6(g) | WF2O2(g) |\\n|-------------------|---------|--------|--------|----------|\\n| Low T | High | High | Medium | 0 |\\n| Mid T | ↓ | ↓ | ↓ | ↑ |\\n| High T | 0 | 0 | 0 | High |\"},{\"panel_id\":\"f\",\"text\":\"| Temperature range | ZrCl4(s) | ZrCl4(g) | B2O3(s) |\\n|-------------------|----------|----------|---------|\\n| Low T | High | 0 | Medium |\\n| Mid T | ↓ | ↑ | Medium |\\n| High T | 0 | High | Medium |\"},{\"panel_id\":\"g\",\"text\":\"| Temperature range | SOCl2(g) | SO2(g) | Zr(SO3)2(s) | ZrCl4(s) | ZrCl4(g) |\\n|-------------------|----------|--------|-------------|----------|----------|\\n| Low T | High | 0 | Medium | Medium | 0 |\\n| Mid T | ↓ | ↑ | ↓ | ↓ | ↑ |\\n| High T | 0 | High | 0 | 0 | Medium |\"},{\"panel_id\":\"h\",\"text\":\"| Temperature range | ZrOCl2(s) | TiCl4(g) | TiO2(s) | ZrO2(s) | Zr2O3Cl2(s) |\\n|-------------------|-----------|----------|---------|---------|-------------|\\n| Low T | High | Medium | Low | Low | Low |\\n| Mid T | ↓ | ↑ | Peak | ↑ | Peak |\\n| High T | 0 | High | 0 | High | 0 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The equilibrium plots show that SOCl₂ produces exclusively volatile products on TiO₂, making it the cleanest and most efficient chlorinating agent for TiO₂ ALE. In contrast, ZrO₂ requires higher temperatures and reacts best with BCl₃, which forms volatile ZrCl₄(g) at elevated temperatures. SOCl₂ performs poorly for ZrO₂ due to persistent nonvolatile sulfate intermediates. These differences directly guide the selection of optimal co-reactants for oxide-specific ALE processes.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the modeling clearly shows which reactions generate volatile chlorides or oxides and which form nonvolatile intermediates that could limit atomic layer etching.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Formation of volatile metal chlorides, Absence of stable solid intermediates, Temperature-dependent stability of fluorides and sulfates, Ability of co-reactants to convert fluorinated surfaces into volatile products\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SOCl₂ produces fully volatile products such as SO₂(g) and TiCl₄(g) with TiO₂, but forms nonvolatile sulfates (e.g., Zr(SO₄)₂(s)) with ZrO₂, explaining the strong contrast in etch behavior.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":508,"height":391},{"panel_id":"b","x":2,"y":389,"width":507,"height":385},{"panel_id":"c","x":524,"y":2,"width":495,"height":392},{"panel_id":"d","x":7,"y":1154,"width":502,"height":388},{"panel_id":"e","x":529,"y":8,"width":488,"height":377},{"panel_id":"f","x":523,"y":387,"width":495,"height":388},{"panel_id":"g","x":7,"y":752,"width":509,"height":406},{"panel_id":"h","x":519,"y":1155,"width":498,"height":386}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/Comparison of BCl3, TiCl4, and SOCl2 chlorinating agents for.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1022,"height":1550,"image_format":"jpeg","image_sha256":"95567307fba3f44ac9e671843e06166c8171a69f5f1b48dac17a0275dba01230","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_35_fig_4.jpg","caption":"FIG. 4. Expected equilibrium species determined by thermodynamic modeling in the temperature range from 25 to $400^{\\circ}C$ for 1 mol $\\mathbb{W}\\mathbb{O}_3$ reacting with (a) $4 / 3\\text{mol}$ $\\mathbb{BC}\\mathbb{I}_3,$ (b) 1 mol $\\mathbb{T}\\mathbb{C}\\mathbb{I}_4,$ (c) 1 mol $\\mathrm{SOCl}_2,$ and for 1 mol $\\mathrm{ZrF_4}$ reacting with (d) $4 / 3\\text{mol}$ $\\mathbb{BC}\\mathbb{I}_3,$ (e) 1 mol $\\mathbb{T}\\mathbb{C}\\mathbb{I}_4,$ and (f) $2.4\\text{mol}$ $\\mathrm{SOCl}_2$","id":"test/atomic-layer-etching/experimental-usecase/35/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/35/fig_4","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"},{"panel_id":"e","label":"multi spectra chart"},{"panel_id":"f","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"In the WO₃ + BCl₃ system, equilibrium concentrations indicate that WOCl₄(g) and B₂O₃(s) dominate at lower temperatures, while increasing temperature promotes the formation of volatile WO₂Cl₂(g), reflecting temperature-activated chlorination of tungsten oxide.\"},{\"panel_id\":\"b\",\"text\":\"For WO₃ + SOCl₂, SO₂(g) remains the dominant gaseous byproduct across the temperature range, while a transition from solid WO₂Cl₂(s) to gaseous WO₂Cl₂(g) occurs with increasing temperature, indicating enhanced volatility of tungsten chlorides.\"},{\"panel_id\":\"c\",\"text\":\"In the WO₃ + TiCl₄ system, multiple competing equilibria are observed, with TiCl₄(g), WO₃(s), TiO₂(s), and WO₂Cl₂(g/s) coexisting over different temperature ranges, demonstrating complex ligand exchange and oxygen transfer reactions.\"},{\"panel_id\":\"d\",\"text\":\"In the ZrF₄ + BCl₃ system, a sharp temperature-dependent transition from solid ZrCl₄(s) to gaseous ZrCl₄(g) is observed, while BF₃(g) remains stable, indicating efficient halogen exchange and volatility enhancement at elevated temperatures.\"},{\"panel_id\":\"e\",\"text\":\"For ZrF₄ + SOCl₂, equilibrium favors the formation of ZrCl₄(g) at higher temperatures, accompanied by stable gaseous byproducts such as SF₂Cl(g) and SO₂F₂(g), highlighting strong fluorine–chlorine exchange and sulfate formation pathways.\"},{\"panel_id\":\"f\",\"text\":\"In the ZrF₄ + TiCl₄ system, ZrF₄(s) and TiCl₄(g) remain largely unchanged over the temperature range, with only trace formation of TiF₄(g) and ZrCl₄(g), indicating minimal thermodynamic driving force for reaction between these species.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction System|Main Volatile Products|Main Solid Products|ALE Interpretation|\\n|----------------|----------------------|------------------|------------------|\\n|WO3 + BCl3|WOCl4(g) (high T)|B2O3(s)|Moderate/OK|\"},{\"panel_id\":\"b\",\"text\":\"| Reaction System|Main Volatile Products|Main Solid Products|ALE Interpretation|\\n|----------------|----------------------|------------------|------------------|\\n|WO3 + SOCl2|SO2(g), WO-chlorides|Very little solid|Excellent for TiO2|\"},{\"panel_id\":\"c\",\"text\":\"| Reaction System|Main Volatile Products|Main Solid Products|ALE Interpretation|\\n|----------------|----------------------|------------------|------------------|\\n|WO3 + TiCl4|Mixed chlorides (weak)|WO2Cl2(s), WOCl4(s)|Poor|\"},{\"panel_id\":\"d\",\"text\":\"| Reaction System|Main Volatile Products|Main Solid Products|ALE Interpretation|\\n|----------------|----------------------|------------------|------------------|\\n|ZrF4 + BCl3|ZrCl4(g) (high T)|B2F4(g)/minor solids|Best for ZrO2|\"},{\"panel_id\":\"e\",\"text\":\"| Reaction System|Main Volatile Products|Main Solid Products|ALE Interpretation|\\n|----------------|----------------------|------------------|------------------|\\n|ZrF4 + SOCl2|Some ZrCl4(g)|Sulfates (Zr(SO4)2, ZrOSO4)|Very poor|\"},{\"panel_id\":\"f\",\"text\":\"| Reaction System|Main Volatile Products|Main Solid Products|ALE Interpretation|\\n|----------------|----------------------|------------------|------------------|\\n|ZrF4 + TiCl4|Minimal|TiF4(s), ZrCl4(g) (low)|Weak|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The predicted product distributions show that SOCl₂ produces clean, volatile products when reacting with WO₃, making it the most efficient co-reactant for TiO₂ ALE. For ZrF₄, however, SOCl₂ forms nonvolatile sulfate residues, while BCl₃ can produce volatile ZrCl₄(g) at elevated temperatures, identifying BCl₃ as the most effective reagent for ZrO₂ ALE. TiCl₄ produces mixed or solid products in both systems, explaining its poor performance. These thermodynamic insights directly correlate with experimental etch behaviors.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the modeling shows which co-reactants form volatile chlorides versus nonvolatile solids, revealing which ligand-exchange reactions can drive ALE and which cannot.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Formation of volatile metal chlorides (e.g., ZrCl₄(g), WOCl₄(g)), Absence of stable nonvolatile by-products (e.g., sulfates, B₂O₃), Temperature-dependent stability of fluorides, Chloride–fluoride exchange energetics\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SOCl₂ produces mainly volatile SO₂(g) with WO₃, but forms nonvolatile sulfates (Zr(SO₄)₂, ZrOSO₄) with ZrF₄, explaining why SOCl₂ is excellent for TiO₂ ALE but ineffective for ZrO₂.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":10,"width":520,"height":410},{"panel_id":"b","x":1,"y":422,"width":523,"height":397},{"panel_id":"c","x":4,"y":821,"width":519,"height":406},{"panel_id":"d","x":543,"y":10,"width":525,"height":408},{"panel_id":"e","x":543,"y":422,"width":517,"height":401},{"panel_id":"f","x":544,"y":824,"width":520,"height":407}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/Comparison of BCl3, TiCl4, and SOCl2 chlorinating agents for.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1067,"height":1231,"image_format":"jpeg","image_sha256":"791088618a4964caee3198514036a45f201d3a493b23e6b429833e4b49b744ca","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_35_fig_5.jpg","caption":"FIG. 5. Saturation curves of etch rate dependence on $\\mathrm{WF}_6$ and co-reactant dose times for $\\mathrm{TiO_2}$ [(a) and (b)] and for $\\mathrm{ZrO_2}$ [(c) and (d)]. All $\\mathrm{TiO_2}$ etching processes were performed at $170^{\\circ}\\mathrm{C}$ and $\\mathrm{ZrO_2}$ etching at $325^{\\circ}\\mathrm{C}$ . The etch rate per cycle was determined by in situ ellipsometry over 10 ALE cycles.","id":"test/atomic-layer-etching/experimental-usecase/35/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/35/fig_5","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The TiO₂ etch rate increases rapidly with WF₆ dose time and approaches saturation for all co-reactants, with BCl₃ producing the highest etch rate, followed by SOCl₂ and TiCl₄, indicating co-reactant-dependent fluorination efficiency.\"},{\"panel_id\":\"b\",\"text\":\"When varying the co-reactant dose time for TiO₂ etching, the etch rate shows a self-limiting behavior, where BCl₃ reaches saturation fastest and at the highest rate, while SOCl₂ and TiCl₄ exhibit slower kinetics and lower saturation values.\"},{\"panel_id\":\"c\",\"text\":\"For ZrO₂ etching as a function of WF₆ dose time, BCl₃ leads to a very high and rapidly saturating etch rate, TiCl₄ shows moderate etching efficiency, and SOCl₂ results in minimal material removal, demonstrating strong precursor selectivity.\"},{\"panel_id\":\"d\",\"text\":\"The ZrO₂ etch rate versus co-reactant dose time reveals that BCl₃ again provides the most efficient and rapid etching, TiCl₄ shows slower saturation behavior, and SOCl₂ produces only weak etching, confirming co-reactant-controlled surface reaction kinetics.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Substrate|Variable Scanned|Best Co-reactant|Worst Co-reactant|Trend Summary|\\n|----------|----------------|----------------|-----------------|-------------|\\n|TiO2|WF6 dose time|SOCl2|TiCl4|Faster saturation for SOCl2; TiCl4 slow/low etch|\"},{\"panel_id\":\"b\",\"text\":\"| Substrate|Variable Scanned|Best Co-reactant|Worst Co-reactant|Trend Summary|\\n|----------|----------------|----------------|-----------------|-------------|\\n|TiO2|Co-reactant dose|SOCl2|TiCl4|SOCl2 gives highest etch rates; BCl3 moderate|\"},{\"panel_id\":\"c\",\"text\":\"| Substrate|Variable Scanned|Best Co-reactant|Worst Co-reactant|Trend Summary|\\n|----------|----------------|----------------|-----------------|-------------|\\n|ZrO2|WF6 dose time|BCl3|SOCl2|BCl3 saturates fastest and highest; SOCl2 very low|\"},{\"panel_id\":\"d\",\"text\":\"| Substrate|Variable Scanned|Best Co-reactant|Worst Co-reactant|Trend Summary|\\n|----------|----------------|----------------|-----------------|-------------|\\n|ZrO2|Co-reactant dose|BCl3|SOCl2|Strong BCl3 saturation; SOCl2 remains near zero|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The saturation behavior reveals which co-reactants efficiently convert fluorinated surfaces into volatile by-products. For TiO₂, SOCl₂ reaches the highest etch rate with rapid saturation, indicating excellent reactivity. For ZrO₂, BCl₃ produces the highest etch rates and strong self-limiting behavior, while SOCl₂ remains ineffective due to nonvolatile sulfate formation. These trends guide material-specific selection of co-reactants, enabling optimized, selective ALE processes for different oxide substrates.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the curves show clear plateaus for effective chemistries, confirming self-limiting etch behavior characteristic of ALE.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Volatility of chloride products, Ability to remove fluorinated intermediates, Formation of nonvolatile residues (e.g., sulfates), Temperature dependence of ligand-exchange reactions\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiO₂ etches fastest with SOCl₂, while ZrO₂ etches fastest with BCl₃, showing opposite reactivity trends for the two oxides.\"}]}]","bbox":[{"panel_id":"a","x":14,"y":0,"width":535,"height":430},{"panel_id":"b","x":558,"y":0,"width":527,"height":430},{"panel_id":"c","x":14,"y":435,"width":534,"height":429},{"panel_id":"d","x":549,"y":432,"width":533,"height":435}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/Comparison of BCl3, TiCl4, and SOCl2 chlorinating agents for.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1086,"height":872,"image_format":"jpeg","image_sha256":"e891fd1925bd4870cb46f3e92fbf7bd904eb4ef5da00a18a2c68f5415702ec36","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_41_fig_2.jpg","caption":"FIG. 2. Ti2p XPS spectra intensity (a) before and (b) after the oxidation step, and (c) O1s XPS spectra intensity by varying the processing time at $100^{\\circ}$ C and $15$ W. The thickness of the $\\mathrm{TiO_2}$ layer as a function of (d) temperature at $15$ W and (e) RF power at $100^{\\circ}$ C in the oxidation step. The standard process conditions of the oxidation step were $\\mathrm{O_2}$ gas flow of $5$ SCCM, a pressure of $0.5$ Torr, a temperature of $100^{\\circ}$ C, an RF power of $15$ W, and a processing time of $300$ s.","id":"test/atomic-layer-etching/experimental-usecase/41/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/41/fig_2","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multiple scatter plot"},{"panel_id":"e","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Ti 2p XPS spectra of the TiN reference film show deconvoluted components assigned to TiN, TiOₓNᵧ, and TiO₂ across 450–470 eV. The relative contributions establish the initial surface chemistry prior to oxidation.\"},{\"panel_id\":\"b\",\"text\":\"After oxidation, the Ti 2p spectrum is dominated by the TiO₂ component, while TiN-related features are reduced. This shift indicates effective surface oxidation induced by the O₂ plasma step.\"},{\"panel_id\":\"c\",\"text\":\"O 1s spectra collected at 100 °C and 15 W evolve with oxidation time from 30 to 600 s. The TiO₂-related component near ~530 eV increases with time, consistent with progressive oxide growth.\"},{\"panel_id\":\"d\",\"text\":\"Estimated TiO₂ thickness increases with oxidation time for all temperatures at fixed RF power. Higher temperatures yield thicker oxides and reach saturation more rapidly.\"},{\"panel_id\":\"e\",\"text\":\"At 100 °C, increasing RF power produces thicker TiO₂ layers over time. The highest power (50 W) shows the largest thickness and fastest approach to saturation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Peak Assignment |\\n|---------------------|------------------|\\n| ~456 | TiN |\\n| ~457 | TiOxNy |\\n| 458–459 | TiO2 |\\n| ~462 | TiN |\\n| ~464 | TiO2 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Peak Assignment |\\n|---------------------|------------------|\\n| ~455 | TiN |\\n| ~457 | TiOxNy |\\n| 458–459 | TiO2 |\\n| 461–462 | TiN |\\n| ~464 | TiO2 |\"},{\"panel_id\":\"c\",\"text\":\"| Binding Energy (eV) | Sample Condition |\\n|---------------------|------------------|\\n| 529-531 | TiO2 (ref, 30s, 60a, 180s, 300s, 600s) |\\n| 531–532 | TiOxNy (ref, 30s, 60a, 180s, 300s, 600s) |\"},{\"panel_id\":\"d\",\"text\":\"| Time (sec)|Thickness at 50°C (nm) | 100°C (nm) | 150°C (nm) | 200°C (nm) |\\n|-----------|---------------------------|------------|---------|----------|\\n| 70 | ~0.15 | ~0.25 | ~0.40 | ~0.70 |\\n| 150 | ~0.25 | ~0.40 | ~0.70 | ~1.00 |\\n| 300 | ~0.30 | ~0.50 | ~0.85 | ~1.25 |\\n| 450 | ~0.30 | ~0.50 | ~0.85 | ~1.25 |\\n| 600 | ~0.30 | ~0.50 | ~0.85 | ~1.25 |\\n| 900 | ~0.30 | ~0.50 | ~0.85 | ~1.25 |\"},{\"panel_id\":\"e\",\"text\":\"| Time (sec) | TiO2 Thickness at 10W (nm) | TiO2 Thickness at 15W (nm) | TiO2 Thickness at 25W (nm) | TiO2 Thickness at 50W (nm) |\\n|-----------|------------------------------|---------|---------|---------|\\n| 70 | 0.20 | 0.30 | 0.50 | 0.60 |\\n| 150 | 0.25 | 0.40 | 0.75 | 1.50 |\\n| 300 | 0.25 | 0.50 | 1.00 | 2.00 |\\n| 600 | 0.25 | 0.50 | 1.00 | 2.50 |\\n| 900 | 0.25 | 0.50 | 1.00 | 2.90 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200 °C.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TiO₂-related O 1s feature near ~530 eV increases strongly as oxidation time increases (30 s → 600 s), and the growth becomes less pronounced at longer times, suggesting an approach toward saturation. A higher-binding-energy shoulder near ~531–532 eV remains present; the figure suggests the TiO₂ contribution becomes increasingly dominant with time.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The curves show a clear ordering (50 W > 25 W > 15 W > 10 W) at long times, indicating thicker oxide growth at higher RF power under otherwise fixed conditions.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiO₂ becomes the dominant contribution (relative to TiN/TiO_xN_y).\"}]}]","bbox":[{"panel_id":"a","x":102,"y":46,"width":540,"height":468},{"panel_id":"b","x":802,"y":46,"width":541,"height":466},{"panel_id":"c","x":100,"y":561,"width":530,"height":469},{"panel_id":"d","x":723,"y":545,"width":605,"height":482},{"panel_id":"e","x":414,"y":1075,"width":606,"height":477}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/Plasma atomic layer etching for titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1344,"height":1564,"image_format":"jpeg","image_sha256":"4ea9b4531340a81a129eff6f8f682699cb75587a8fcea97eb569c76cfe6db5fc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_41_fig_3.jpg","caption":"FIG. 3. (a) Ti2p XPS spectra intensity after the fluorination step and (b) F1s XPS spectra intensity of $685.0\\mathrm{eV}$ with varying the processing time at $100^{\\circ}\\mathrm{C}$ and $15\\mathrm{W}$ of fluorination step. (c) F atomic fraction with $\\mathrm{CF_4}$ plasma-exposure time at RF powers of 10, 15, and $25\\mathrm{W}$ in the fluorination step. The standard process conditions of the fluorination step were a $\\mathrm{CF_4}$ gas flow of 2 SCCM, a pressure of $0.03\\mathrm{Torr}$ , a temperature of $100^{\\circ}\\mathrm{C}$ , an RF power of $15\\mathrm{W}$ , and a processing time of $20\\mathrm{s}$ .","id":"test/atomic-layer-etching/experimental-usecase/41/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/41/fig_3","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Ti 2p XPS spectrum measured after the fluorination step, showing deconvoluted components attributed to TiN, TiOxNy, TiO₂, and fluorinated TiO₂−xFx species, indicating chemical modification of the surface during CF₄ plasma exposure.\"},{\"panel_id\":\"b\",\"text\":\"F 1s XPS spectra acquired at increasing fluorination times at 100 °C and 15 W, with a dominant peak near 685.0 eV whose intensity grows with time, reflecting progressive incorporation of fluorine into the surface layer.\"},{\"panel_id\":\"c\",\"text\":\"Fluorine atomic percentage plotted as a function of CF₄ plasma exposure time for RF powers of 10, 15, and 25 W, showing higher fluorine content and faster saturation at increased RF power.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding energy (eV) | Assignment |\\n|--------------------|-----------------|\\n| ~455–456 | TiN |\\n| ~456–457 | TiOxNy |\\n| ~458–459 | TiO2 |\\n| ~459–460 | TiO2−xFx |\\n| ~462 | TiN |\\n| ~464–465 | TiO2 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Peak Assignment | Observation |\\n|---------------------|----------------|-------------|\\n| ~685.0 | TiO2−xFx | Peak intensity increases with exposure time |\"},{\"panel_id\":\"c\",\"text\":\"| Time (s) | 10 W (%) | 15 W (%) | 25 W (%) |\\n|----------|----------|----------|----------|\\n| 10 | ~4–5 | ~5 | ~10 |\\n| 15 | ~9 | ~10 | ~15 |\\n| 20 | ~10 | ~10–11 | ~15–16 |\\n| 30 | ~11 | ~11–12 | ~17 |\\n| 45 | ~12 | ~12 | ~21 |\\n| 60 | ~12 | ~12 | ~24 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Ti 2p spectrum shows the emergence of TiO₂−xFx components alongside TiO₂ and TiN peaks, indicating that CF₄ plasma exposure leads to partial fluorination of the oxide layer rather than complete removal or bulk conversion.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher RF power results in higher fluorine atomic percentage at all exposure times.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiO2−xFx.\"}]}]","bbox":[{"panel_id":"a","x":96,"y":32,"width":550,"height":473},{"panel_id":"b","x":803,"y":27,"width":531,"height":470},{"panel_id":"c","x":468,"y":584,"width":557,"height":469}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/Plasma atomic layer etching for titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1353,"height":1059,"image_format":"jpeg","image_sha256":"3bad2be5fb32bfb2f5e422db674379ae629ba6cc4aae1b510e9365d986661bb7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_41_fig_4.jpg","caption":"FIG. 4. (a) Ti2p XPS spectra intensity after the removal step at a temperature of $150^{\\circ}C$ , (b) F1s XPS spectra intensity of $685.0 \\text{eV}$ , and (c) F1s peak area spectra intensity for $\\text{TiO}_{2 - x}\\text{F}_x$ products as a function of temperature at the removal step. The standard process conditions of the removal step were an Ar gas flow of 50 SCCM, a pressure of 0.1 Torr, a temperature of $150^{\\circ}C$ , and a time of 30 s without RF power.","id":"test/atomic-layer-etching/experimental-usecase/41/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/41/fig_4","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Ti 2p XPS spectrum measured after the removal step at 150 °C, showing components assigned to TiN, TiOxNy, and TiO₂, with no fluorinated Ti species detected.\"},{\"panel_id\":\"b\",\"text\":\"F 1s XPS spectra recorded after the removal step at increasing temperatures, showing a strong F 1s signal at 80–120 °C that rapidly diminishes and approaches the noise level at temperatures ≥150 °C.\"},{\"panel_id\":\"c\",\"text\":\"F 1s peak area as a function of removal temperature, remaining high up to ~120 °C, dropping sharply near 140 °C, and becoming negligible above 150 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Major Peak Assignment |\\n|----------------------|-----------------------|\\n| ~456.0 | TiN |\\n| ~457.0 | TiOxNy |\\n| ~458.2 | TiO2 |\\n| ~462.0 | TiN |\\n| ~464.0 | TiO2 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Peak Assignment | Observation |\\n|----------------------|----------------|-------------|\\n| ~685.0 | 80°C,100°C,120°C | Highest Peak intensity |\\n| ~685.0 | 140°C,150°C,180°C,200°C | Lowest Peak intensity (near baseline) |\"},{\"panel_id\":\"c\",\"text\":\"| Temperature (°C) | F1s peak area (A.U.) |\\n|------------------|----------------------|\\n| 80 | 17000 |\\n| 100 | 17500 |\\n| 120 | 16000 |\\n| 140 | 2500 |\\n| 160 | 0 |\\n| 180 | 0 |\\n| 200 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After the removal step, the Ti 2p spectrum shows only TiN, TiOxNy, and TiO₂ components, with no signatures of fluorinated Ti species. This indicates that fluorine-containing surface species formed during fluorination are effectively removed during the thermal removal step.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between approximately 120 °C and 140 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thermal removal of fluorine from the surface.\"}]}]","bbox":[{"panel_id":"a","x":94,"y":30,"width":517,"height":447},{"panel_id":"b","x":749,"y":28,"width":503,"height":437},{"panel_id":"c","x":352,"y":538,"width":562,"height":445}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/Plasma atomic layer etching for titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1253,"height":986,"image_format":"jpeg","image_sha256":"cd7ea5369f44112ed6841a33dad5394eeec7cb93e4dbdafe4cdd8350368db1c2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG12_a.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/47/FIG12_a","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG12_a","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS Mo 3d spectra of a molybdenum sample as-received\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Peak Assignment | Binding Energy (eV) |\\n|-----------------|-----------------------|\\n| Mo 3d₅/₂ (Mo⁶⁺) | ~236 |\\n| Mo 3d₃/₂ (Mo⁶⁺) | ~232 |\\n| Mo 3d₅/₂ (Mo⁴⁺) | ~234 |\\n| Mo 3d₃/₂ (Mo⁴⁺) | ~230 |\\n| Minor feature | ~228 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"XPS probes the top five or so nanometers of the surface, whereas LEIS is able to distinguish the topmost surface atoms from the atoms underneath\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To get further insight into the etching mechanism of Mo with O2 and NbCl5, the films were etched until a selected point of the process and then transferred in vacuo to XPS. On the as-received film, there was a thick native oxide layer due to a long storage in air.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the XPS spectrum of Mo 3d5/2 and 3d3/2 peaks at 232.7 and 235.9 eV make up most of the intensity, attributed to Mo6+, with peaks at 231.6 and 234.7 eV\\narising from Mo5+. A small signal of Mo0 is also visible at 227.9 and 231.0 eV\"}]}]","bbox":[{"panel_id":"a","x":3,"y":7,"width":571,"height":507}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"not_found"},"width":575,"height":514,"image_format":"jpeg","image_sha256":"1746d36ebd70d78bb4ae5a186092d29a11f5d7c32f2513fafff36e150103bf94","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG12_b.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/47/FIG12_b","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG12_b","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"X-ray photoelectron spectra of Mo 3d spectra of a molybdenum sample after heating in vacuum at 300 °C for 20 min.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Oxidation State | Peak Assignment | Binding Energy (eV) |\\n|-----------------|-----------------|-----------------------|\\n| Mo⁰ | Mo 3d | ~228 |\\n| Mo³⁺ | Mo 3d | ~230 |\\n| Mo⁴⁺ | Mo 3d | ~232 |\\n| Mo⁵⁺ | Mo 3d | ~234 |\\n| Mo⁶⁺ | Mo 3d | ~236 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To measure a spectrum that corresponds to the film surface just before etching is started, the sample was heated in vacuum to 300 °C and kept at this temperature for 20 min under a constant N2 flow\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A significant decrease in the relative intensity of Mo6+ was observed compared to the as-received sample, with a corresponding increase in the intensity of Mo5+ and appearance of Mo4+ peaks at 230.5 and 233.7 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This demonstrates that MoO3 is reduced in vacuum at 300 °C, possibly due to comproportionation reactions between Mo and MoO3.33\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":6,"y":0,"width":525,"height":511}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_b.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"not_found"},"width":536,"height":517,"image_format":"jpeg","image_sha256":"4beed8529191194a9a26d5a94b2bcf13d058cc5332adcdc63bc9a3688f5a6be0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG12_c.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/47/FIG12_c","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG12_c","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a Mo 3d spectra chart with peaks at specific binding energies, after etching with one 4 s NbCl5 pulse\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Oxidation State | Peak Assignment | Binding Energy (eV) |\\n|-----------------|-----------------|-----------------------|\\n| Mo⁰ | Mo 3d | ~228 |\\n| Mo³⁺ | Mo 3d | ~230 |\\n| Mo⁴⁺ | Mo 3d | ~231 |\\n| Mo⁵⁺ | Mo 3d | ~232 |\\n| Mo⁶⁺ | Mo 3d | ~234 |\\n| Additional Mo⁶⁺ component | - | ~236 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After the first NbCl5 pulse, a decrease in the Mo6+ and Mo5+ intensities is seen compared to the unetched film whereas Mo4+ has higher relative intensity than before etching\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The intensity of the metallic Mo0 is also higher, which indicates etching (thinning) of the surface oxide. An increase of the intensity between the oxide and metal peaks is seen, which corresponds to peaks at 229.6 and 232.7 eV. These are attributed to Mo3+, likely in the form of MoCl3.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The generation of MoCl3 is supported by the thermodynamic equilibrium calculations, which indicated that NbCl5 can react with Mo to make lower valence chlorides.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":5,"width":572,"height":513}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_c.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"not_found"},"width":578,"height":519,"image_format":"jpeg","image_sha256":"01992667315904e782cc54986afd50e3bc900ee6ed7fe1fe7261548e85ffa0f5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG12_d.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/47/FIG12_d","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG12_d","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS Mo 3d spectra after oxidizing the etched sample with a 6 s O2 pulse at 300 °C\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Oxidation State | Peak Assignment | Binding Energy (eV) |\\n|-----------------|-----------------|-----------------------|\\n| Mo⁰ | Mo 3d | ~228 |\\n| Mo³⁺ | Mo 3d | ~230 |\\n| Mo⁴⁺ | Mo 3d | ~231 |\\n| Mo⁵⁺ | Mo 3d | ~232 |\\n| Mo⁶⁺ | Mo 3d | ~234 |\\n| Additional Mo⁶⁺ component | - | ~236 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"CPS\\n, Mo⁰\\n, Mo³⁺\\n, Mo⁴⁺\\n, Mo⁵⁺\\n, Mo⁶⁺\\n, BG\\n, Envelope\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film was next oxidized at 300 °C with a 6 s pulse of O2. An increase in the Mo6+ intensity is seen, along with a decrease in Mo3+, showing the oxidation of the surface, the Mo0 intensity also increases.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"the Mo0 intensity increases after 6s pulse of O2, which indicates that the surface layer gets thinner during the O2 pulse. The thinning might be caused by some of the MoCl3 being oxidized directly to volatile oxychlorides.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Red and black corresponding to CPS and envelope.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":6,"width":532,"height":506}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_d.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_d.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"not_found"},"width":536,"height":516,"image_format":"jpeg","image_sha256":"bbae41d0e060a2afdbb96cb06ec24dc7497eadc2cd8fff75314729e156480f77","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG12_e.jpg","caption":"FIG. 12. XPS Mo 3d spectra of a molybdenum sample (a) as-received, (b) after heating in vacuum at $300^{\\circ}\\mathrm{C}$ for $20\\mathrm{min}$ , (c) after etching with one $4\\mathrm{s}$ $\\mathrm{NbCl}_5$ pulse and (d) after oxidizing the etched sample with a $6\\mathrm{s}$ $\\mathrm{O}_2$ pulse at $300^{\\circ}\\mathrm{C}$ . The same sample after three full ALE cycles and (e) one $\\mathrm{NbCl}_5$ pulse, and (f) oxidized again with $\\mathrm{O}_2$ .","id":"test/atomic-layer-etching/experimental-usecase/47/FIG12_e","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG12_e","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A XPS spectra chart displaying the intensity of Mo 3d peaks at various binding energies after being exposed to 4th cycle NbCl5\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Oxidation State | Peak Assignment | Binding Energy (eV) |\\n|-----------------|-----------------|-----------------------|\\n| Mo⁰ | Mo 3d | ~228 |\\n| Mo³⁺ | Mo 3d | ~230 |\\n| Mo⁴⁺ | Mo 3d | ~231 |\\n| Mo⁵⁺ | Mo 3d | ~232 |\\n| Mo⁶⁺ | Mo 3d | ~234 |\\n| Additional Mo⁶⁺ component | - | ~236 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The intensities of the Mo5+ and Mo6+ states decrease, and the peaks identified as Mo metal and Mo3+ become more intense\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The change indicates that the surface oxide layer of the molybdenum film is etched and replaced by a thinner nonvolatile oxide-chloride layer\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the fourth O2 pulse, the Mo3+ doublet intensity decreases, and the Mo6+, Mo5+, Mo4+ and Mo0 peaks become stronger. This again indicates that O2 is both oxidizing the molybdenum surface and partially volatilizing the previously generated MoCl3\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":5,"y":5,"width":570,"height":511}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_e.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_e.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":578,"height":519,"image_format":"jpeg","image_sha256":"5c064e18d0d33ebaff46a7d177d1990927153bbfb19139064d797019352bf97a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG12_f.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/47/FIG12_f","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG12_f","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS spectra chart displaying Mo 3d binding energy peaks after 4th cycle oxidation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Oxidation State | Peak Assignment | Binding Energy (eV) |\\n|-----------------|-----------------|-----------------------|\\n| Mo⁰ | Mo 3d | ~228 |\\n| Mo³⁺ | Mo 3d | ~230 |\\n| Mo⁴⁺ | Mo 3d | ~231 |\\n| Mo⁵⁺ | Mo 3d | ~232 |\\n| Mo⁶⁺ | Mo 3d | ~234 |\\n| Additional Mo⁶⁺ component | - | ~236 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Red → CPS\\n, Purple → Mo⁰\\n, Blue → Mo³⁺\\n, Teal (cyan) → Mo⁴⁺\\n, Green → Mo⁵⁺\\n, Yellow → Mo⁶⁺\\n, Black dashed line → BG (Background)\\n, Black solid line → Envelope\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With further ALE cycles, the intensities of the Mo5+ and Mo6+ states decrease, and the peaks identified as Mo metal and Mo3+ become more intense\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the fourth O2 pulse, the Mo3+ doublet intensity decreases, and the Mo6+, Mo5+, Mo4+ and Mo0 peaks become stronger. This again indicates that O2 is both oxidizing the molybdenum surface and partially volatilizing the previously generated MoCl3\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"yes\"}]}]","bbox":[{"panel_id":"a","x":4,"y":6,"width":524,"height":512}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_f.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG12_f.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"not_found"},"width":533,"height":519,"image_format":"jpeg","image_sha256":"15bf1c857cfc58294beea54add661499ddfcc416b5713b880289bd8c85b23e20","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig11.jpg","caption":"FIG.11. Mass traces of (a) $\\mathsf{BF}_2^+$ at $m / z = 47$ amu and $\\mathsf{BFOH}^+$ at $m / z = 49$ amu and (b) $\\mathrm{H}_2\\mathrm{O}^+$ at $m / z = 18$ amu vs time during the first five HF exposures on $\\mathrm{B}_2\\mathrm{O}_3$ powder.","id":"test/atomic-layer-etching/simulation-usecase/28/fig11","sample_id":"atomic-layer-etching/simulation-usecase/28/fig11","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Mass spectrometry traces showing the evolution of fluorinated boron species during five HF pulses. The BF2+ signal increases progressively with successive cycles, while the BFOH+ signal decreases, indicating a shift from hydroxyl-containing to more fully fluorinated surface species.\"},{\"panel_id\":\"b\",\"text\":\"Mass spectrometry trace tracking H2O+ evolution during repeated HF exposure. The signal increases over the first few cycles and then levels off, indicating saturation in water release behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|HF Cycle |\\tTime (min)\\t|BF₂⁺ (m/z 49amu) mV\\t|BFOH⁺ (m/z 47amu) mV|\\n|---|---|---|---|\\n|1st\\t|~2.5-5.00\\t|~60 mV\\t |~45 mV|\\n|2nd\\t|~7.5-10.00\\t|~95 mV\\t |~40 mV|\\n|3rd\\t|~12.5-15.00 |~110 mV\\t|~30 mV|\\n|4th\\t|~17.5-20.00 |~110 mV\\t|~20 mV|\\n|5th\\t|~22.5-25.00 |~100 mV\\t|~20 mV|\"},{\"panel_id\":\"b\",\"text\":\"|HF Cycle\\t|Time (min)\\t|H₂O⁺ (m/z 18amu) mV|\\n|---|---|---|\\n|1st\\t|~2.5-5.00\\t|~300 mV|\\n|2nd\\t|~7.5-10.00\\t|~450 mV|\\n|3rd\\t|~12.5-15.00 |~480 mV|\\n|4th\\t|~17.5-20.00 |~460 mV|\\n|5th\\t|~22.5-25.00 |~430 mV|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The data reveals an inverse relationship between the two fluorinated species as the process proceeds. The BF2+ signal (indicating pure fluorination) roughly doubles from ~60 mV to a peak of ~110 mV, suggesting the surface is becoming more effectively fluorinated. Conversely, the BFOH+ signal (indicating partial hydroxy-fluorination) decreases by more than half (45 mV to 20 mV), suggesting a reduction in surface hydroxyl groups available for this specific reaction pathway.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"m/z = 49 for BF2+ \\n, m/z = 47 for BFOH+\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the release is pulsed, occurring only during the discrete HF exposure times (approx. every 5 minutes).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It reaches a maximum of approximately 480 mV at the 3rd HF cycle.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":3,"width":667,"height":222},{"panel_id":"b","x":4,"y":231,"width":663,"height":236}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":672,"height":470,"image_format":"jpeg","image_sha256":"3e7850b0fb88ef279629a5196bc9377318720cbc42ba030528e82a1c3aea8b61","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig9.jpg","caption":"FIG.9. Mass spectrum of products monitored in the range of $m / z = 70-140$ amu during spontaneous etching of $\\mathrm{B}_2\\mathrm{O}_3$ by HF at $150^{\\circ}C$ during the a first HF exposure and (b) fifth HF exposure. Observed products are $\\mathrm{B}_3\\mathrm{O}_3\\mathrm{F}_3$ , $\\mathrm{B}_3\\mathrm{O}_3\\mathrm{F}_2\\mathrm{OH}$ , and $\\mathrm{B}_3\\mathrm{O}_3\\mathrm{F}(\\mathrm{OH})_2$ boroxine rings.","id":"test/atomic-layer-etching/simulation-usecase/28/fig9","sample_id":"atomic-layer-etching/simulation-usecase/28/fig9","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows mass spectra recorded at 150 °C during spontaneous etching of B2O3 by HF, comparing the first and fifth HF exposures. During the first HF exposure, intense peaks corresponding to fluorinated boron oxide and boroxine-related ions are observed, while these signals are strongly suppressed after the fifth HF exposure, consistent with progressive depletion of readily volatilizable reaction products.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| m/z range | Assigned ion | Relative intensity | HF exposure |\\n|-----------|--------------|--------------------|-------------|\\n| ~78–80 | B2F3⁺ / B2F2(OH)⁺ | High | 1st HF |\\n| ~90–95 | B2OF3⁺ / B2OF2(OH)⁺ | Moderate | 1st HF |\\n| ~115–120 | B3O3F2⁺ / B3O3F(OH)⁺ | Low–moderate | 1st HF |\\n| ~135–140 | B3O3F3⁺ / B3O3F2(OH)⁺ | Low | 1st HF |\\n| 70–140 | - | Near zero | 5th HF |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The strong signal during the first HF exposure indicates active formation of volatile fluorinated boron species. By the fifth exposure, the intensity is greatly reduced, showing that most reactive surface species have already been consumed.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first HF exposure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Boroxine rings are structural motifs present in B2O3. During the initial HF exposure, these units react and fragment, producing fluorinated boron–oxygen species that desorb and are detected in the mass spectrum.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the reduced signal is consistent with self-limiting behavior, although this figure alone does not prove saturation.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":3,"width":670,"height":496}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":675,"height":503,"image_format":"jpeg","image_sha256":"4f607a3da94900a6429dcc83b8ba16c09e668dd2f65ed48487ac4edff57bb1da","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig_2.jpg","caption":"FIG. 2. Infrared absorbance spectra from 400 to $1800~\\mathrm{cm^{-1}}$ during $\\mathsf{B}_2\\mathsf{O}_3$ ALD using $\\mathrm{BCl}_3$ and $\\mathrm{H}_2\\mathrm{O}$ as reactants after 1, 5, 10, and 15 $\\mathrm{B}_2\\mathrm{O}_3$ ALD cycles at $40^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-etching/simulation-usecase/28/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/28/fig_2","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows infrared absorbance spectra of B2O3 films grown by ALD using BCl3 and H2O at 40 °C after 1, 5, 10, and 15 cycles. The progressive increase in the B–O stretching and B–O–B bending bands reflects steady film growth with increasing number of ALD cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wave number | Features | 1 Cycle | 5 Cycles | 10 Cycles | 15 Cycles|\\n|-------------|---------------------|---------|---------|-----------|----------|\\n| ~1450 | B-O stretch (Peak 1)|\\t0.15 | 0.43\\t| 0.60 | 0.71 |\\n| ~1350 | Valley between peaks|\\t0.08 | 0.22\\t| 0.41 | 0.54 |\\n| ~1260 | B-O stretch (Peak 2)|\\t0.10 | 0.30\\t| 0.50 | 0.63 |\\n| ~1100 | Minor shoulder\\t | 0.05 | 0.10\\t| 0.15 | 0.18 |\\n| ~920 | Baseline region\\t | 0.02 | 0.04\\t| 0.06 | 0.08 |\\n| ~720 | B-O-B bend (Sharp) |\\t0.04 | 0.13\\t| 0.22 | 0.30 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increasing intensity of the B–O stretching band with each additional ALD cycle shows that more B–O bonds are being incorporated into the film. This steady growth in absorbance is consistent with layer-by-layer deposition during the ALD process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The B–O stretching band.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The B–O–B bending mode.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":1,"width":670,"height":516}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":675,"height":522,"image_format":"jpeg","image_sha256":"d742a6ca15a0ccd4f4d15715d508d7ee394b17d4191ef847acbdfeb57d925ecf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig_3.jpg","caption":"FIG. 3. Infrared difference spectra recorded after $\\mathrm{BCl}_3$ and $\\mathrm{H}_2\\mathrm{O}$ exposures during 13th $\\mathrm{B}_2\\mathrm{O}_3$ ALD cycle at $40^{\\circ}\\mathrm{C}$ . (a) Difference spectra between 400 and $1800~\\mathrm{cm^{-1}}$ . (b) Difference spectra between 2500 and $4000~\\mathrm{cm^{-1}}$ .","id":"test/atomic-layer-etching/simulation-usecase/28/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/28/fig_3","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure compares infrared difference spectra between 400 and 1800 cm⁻¹ recorded after BCl3→H2O and H2O→BCl3 exposures during the 13th B2O3 ALD cycle at 40 °C. Differences in the B–O stretching, B–Cl, and B–O–B bending regions show that the order of precursor exposure strongly affects surface bonding.\"},{\"panel_id\":\"b\",\"text\":\"The subfigure shows corresponding difference spectra in the O–H stretching region. The presence and intensity of BO–H and hydrogen-bonded O–H features indicate different hydroxylation behavior depending on whether H2O or BCl3 is dosed first.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wave number region (cm⁻¹) | Vibrational assignment | Difference between exposure sequences |\\n|--------------------------|------------------------|---------------------------------------|\\n| ~1400–1600 | B–O stretch | Stronger feature for BCl3→H2O sequence |\\n| ~1000 | B–Cl related mode | Present after BCl3 exposure, reduced after H2O |\\n| ~700–800 | B–O–B bend | Appears more clearly after H2O exposure |\\n| ~500–600 | O–B–O bend | Small but distinct differences between sequences |\"},{\"panel_id\":\"b\",\"text\":\"| Wave number region (cm⁻¹) | Vibrational assignment | Difference between exposure sequences |\\n|--------------------------|------------------------|---------------------------------------|\\n| ~3700 | BO–H stretch | Sharp feature associated with hydroxyl formation |\\n| ~3600–3200 | H-bonded O–H | Broad positive band stronger for H2O→BCl3 sequence |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Changing the exposure order alters which surface bonds form first during the ALD cycle. This is reflected in differences in the B–O stretching, B–Cl, and bending modes, showing that surface chemistry depends strongly on whether chlorination or hydroxylation occurs first.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The band near ~1000 cm⁻¹.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The H2O→BCl3 sequence.\"}]}]","bbox":[{"panel_id":"a","x":9,"y":7,"width":664,"height":220},{"panel_id":"b","x":2,"y":232,"width":670,"height":245}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":675,"height":481,"image_format":"jpeg","image_sha256":"280f5993c0c57f149a98d93b1c575a0d5ae7674b98715b3349ce6b660a373207","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig_4.jpg","caption":"FIG. 4. Infrared difference spectra between 400 and $1800~\\mathrm{cm^{-1}}$ recorded after consecutive HF exposures on the $\\mathrm{B}_2\\mathrm{O}_3$ ALD film at $150^{\\circ}\\mathrm{C}$ using the original $\\mathrm{B}_2\\mathrm{O}_3$ ALD film as reference. Original $\\mathrm{B}_2\\mathrm{O}_3$ ALD film is nearly completely removed after $>5$ HF exposures.","id":"test/atomic-layer-etching/simulation-usecase/28/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/28/fig_4","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows multiple infrared difference spectra of a B2O3 ALD film recorded after consecutive HF exposures at 150 °C. The progressive deepening of the B–O stretching band and the persistence of the B–O–B bending feature indicate rapid removal of the B2O3 film, which is nearly complete after more than five HF exposures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber region (cm⁻¹) | Vibrational assignment | Evolution with HF exposure |\\n|--------------------------|------------------------|----------------------------|\\n| ~1250–1600 | B–O stretch | Strong negative band that deepens with increasing HF exposure; nearly saturated after ~5 exposures |\\n| ~700–800 | B–O–B bend | Distinct negative feature that persists throughout HF cycling |\\n| ~1000 | Baseline region | Minor changes relative to main B–O features |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increasing depth of the B–O stretching band shows that B–O bonds are progressively removed as HF exposure continues. The saturation of this feature after several cycles indicates that most of the B2O3 film has been etched away.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After about five HF exposures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The B–O–B bending mode.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":5,"y":3,"width":668,"height":447}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":675,"height":456,"image_format":"jpeg","image_sha256":"677c6e52d4e262cbbfa53b976658bfd8fe13650ded8d79ea2cdf371b1adfa58d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig_5.jpg","caption":"FIG. 5. Infrared difference spectra between 3350 and $3850~\\mathrm{cm^{-1}}$ recorded after consecutive $\\mathrm{HF}$ exposures on the $\\mathrm{B}_2\\mathrm{O}_3$ ALD film at $150^{\\circ}\\mathrm{C}$ using the original $\\mathrm{B}_2\\mathrm{O}_3$ ALD film as reference.","id":"test/atomic-layer-etching/simulation-usecase/28/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/28/fig_5","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows multiple infrared difference spectra of a B2O3 ALD film recorded after consecutive HF exposures at 150 °C. A sharp H–F stretching feature appears after HF dosing, while the B–O–H band decreases, indicating loss of specific hydroxyl configurations. Simultaneously, a broad hydrogen-bonded O–H band deepens with increasing HF exposure, reflecting progressive changes in surface O–H bonding.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber region (cm⁻¹) | Vibrational assignment | Evolution with HF exposure |\\n|--------------------------|------------------------|----------------------------|\\n| ~3750–3800 | H–F stretch | Sharp positive peak appears after initial HF exposure |\\n| ~3700 | B–O–H stretch | Negative feature indicating loss of B–O–H species |\\n| ~3650–3450 | H-bonded O–H | Broad negative band that deepens and broadens with repeated HF exposures (cycles 4–9) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increasing depth and width of the O–H stretching band indicate that the surface O–H environment becomes more strongly hydrogen-bonded as HF exposure continues. At the same time, the negative B–O–H feature shows depletion of specific hydroxyl configurations present in the initial film. Together, these trends reflect progressive modification of surface O–H bonding during repeated HF exposure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The sharp band near 3750–3800 cm⁻¹.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It decreases in intensity, indicating loss of B–O–H species.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":6,"y":2,"width":669,"height":496}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":678,"height":503,"image_format":"jpeg","image_sha256":"cc70cf2ba1aaf0ea31c14bbe1d65100de61bcf8105fc82fbb1959f35a683cff1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig_6.jpg","caption":"FIG. 6. Infrared difference spectra showing absorbance after first HF exposure referenced to the initial $\\mathrm{B}_2\\mathrm{O}_3$ ALD film and ninth HF exposure referenced to absorbance after the eighth HF exposure. Inverted absorbance for original $\\mathrm{B}_2\\mathrm{O}_3$ ALD film is also shown for comparison.","id":"test/atomic-layer-etching/simulation-usecase/28/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/28/fig_6","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares multiple infrared difference spectra of a B2O3 ALD film recorded after the first and ninth HF exposures at 150 °C, together with an inverted reference spectrum. The progressive loss of the B–O stretching band and the appearance of B–F related features indicate systematic chemical modification and fluorination of the B2O3 film with repeated HF exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber region (cm⁻¹) | Assignment | Trend across spectra |\\n|--------------------------|------------|----------------------|\\n| ~1400–1600 | B–O stretch | Strong in B2O3 ALD, progressively reduced after repeated HF exposure |\\n| ~1350 | B–F mode | Appears after HF exposure and strengthens with cycling |\\n| ~800–900 | Framework modes | Minor changes between spectra |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The decrease of the B–O stretching band shows that B–O bonds are being removed or altered during HF exposure. At the same time, new features associated with B–F bonding appear, indicating fluorination of the surface as the reaction proceeds.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The band in the ~1400–1600 cm⁻¹ region.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ninth HF exposure shows a weaker B–O stretch and more pronounced B–F related features.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":3,"y":0,"width":673,"height":499}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":681,"height":503,"image_format":"jpeg","image_sha256":"ceaa8840a2c7ef69b31c24623a61b407910c8e86e6b352809a9d491a1f0b89e4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig_7.jpg","caption":"FIG. 7. Infrared difference spectra between 400 and $1800~\\mathrm{cm^{-1}}$ recorded after consecutive HF exposures on $\\mathrm{B}_2\\mathrm{O}_3$ ALD film at $40^{\\circ}\\mathrm{C}$ using the original $\\mathrm{B}_2\\mathrm{O}_3$ ALD film as reference. Original $\\mathrm{B}_2\\mathrm{O}_3$ ALD film is nearly completely removed after 2 HF exposures.","id":"test/atomic-layer-etching/simulation-usecase/28/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/28/fig_7","subset":"multi-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure shows infrared difference spectra of a B2O3 ALD film recorded after consecutive HF exposures at 40 °C. A strong loss of the B–O stretching band and a clear B–O–B bending feature indicate progressive removal of the B2O3 film, which is nearly complete after the second HF exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Feature | Absorbance change |\\n|------------------|---------|-------------------|\\n| ~1400–1550 | B–O stretch | Strong negative band after 2nd HF exposure |\\n| ~1000 | Baseline region | Minor change |\\n| ~720 | B–O–B bend | Distinct negative peak |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The strong decrease in the B–O stretching band intensity shows that B–O bonds are being broken during HF exposure. The appearance and growth of negative features in the difference spectrum indicate loss of the original B2O3 vibrational modes, consistent with progressive etching of the film.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The B–O stretching mode.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The second HF exposure shows much stronger negative absorbance, indicating more extensive removal of the B2O3 film.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":2,"y":1,"width":667,"height":499}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":675,"height":503,"image_format":"jpeg","image_sha256":"970a920e67eb38c35e5bb29156a5ee40f54586482ece3f9288dd6a21bcfa688c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/multi-spectra-chart/train/metadata.jsonl b/subsets/multi-spectra-chart/train/metadata.jsonl index 9c7bc582b9edb5555aab103e16727db4192d808d..cbcf01cee70eeb2d49f449ba2b203dfd9c488947 100644 --- a/subsets/multi-spectra-chart/train/metadata.jsonl +++ b/subsets/multi-spectra-chart/train/metadata.jsonl @@ -1,65 +1,65 @@ -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_14_figure_2.jpg","caption":"FIGURE 2: Material characterizations of ALD grown $\\mathrm{WS}_2$ films without doping. (a) The XPS fine spectra of W 4f and S 2p for as-deposited and annealed 400-cycle $\\mathrm{WS}_2$ film. Both $\\mathrm{WS}_2$ and $\\mathrm{WS}_{2 + x}$ peaks were observed, with the W/S ratio of 1:2.7. Only $\\mathrm{WS}_2$ was observed in fine spectra of annealed $\\mathrm{WS}_2$ , indicating the necessity of annealing, and the W/S ratio was reduced to 1:2.1. (b) The Raman spectra of annealed $\\mathrm{WS}_2$ films with varying thickness. The Raman peak separation increased with increasing film thickness. (c) The plane-view and cross-sectional TEM result of 400-cycle annealed $\\mathrm{WS}_2$ film and the plane-view TEM result and statistical analysis of film grains by selected area electron diffraction (SAED) patterns. A layered structure was clearly observed in cross-sectional TEM. The average grain size of 259 $\\mathrm{WS}_2$ grains was $55\\mathrm{nm}$ , with the maximum size up to $160\\mathrm{nm}$ .","id":"train/atomic-layer-deposition/experimental-usecase/14/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/14/figure_2","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/Hanjie Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1328,"height":747,"image_format":"jpeg","image_sha256":"e7ad17a7932de5410c41372565684d32f723e59fa78d55af2950e322d830fe22","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":0,"width":825,"height":719},{"panel_id":"b","x":840,"y":10,"width":485,"height":301},{"panel_id":"c","x":857,"y":365,"width":470,"height":294}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_14_figure_3.jpg","caption":"FIGURE 3: Material characterization of Nb-doped p-type $\\mathrm{WS}_2$ . (a) The XPS fine spectra of as-deposited and annealed 400-cycle $\\mathrm{WS}_2$ with 30-cycle Nb doping. $\\mathrm{WS}_2$ $\\mathrm{WS}_{2 + \\mathrm{x}},$ and $\\mathrm{NBs}_2$ were all observed in as-deposited Nb-doped $\\mathrm{WS}_2$ film. After annealing, only $\\mathrm{WS}_2$ and $\\mathrm{NBs}_2$ were observed, indicating the effective doping. (b) The Raman spectra of 400-cycle $\\mathrm{WS}_2$ with Nb doping varying from 10 to 100 cycles. A blue shift of $\\mathrm{A_{1g}}$ peak was observed when increasing doping concentration, implying the stiffening of Nb-doped $\\mathrm{WS}_2$ lattice with Nb-S bonds. (c) The hall mobility and resistivity of $\\mathrm{WS}_2$ and Nb-doped $\\mathrm{WS}_2$ with 50-cycle Nb doping at temperature varying from $50\\mathrm{K}$ to $300\\mathrm{K}$ d) The mobility, resistivity, and TOF-SIMS of $\\mathrm{WS}_2$ and Nb-doped $\\mathrm{WS}_2$ with Nb doping of 15, 20, and 100 cycles. After 15-cycle Nb doping, the carrier type changed from electrons to holes, and the mobility decreased one order of magnitude, while the resistivity increased 4 orders of magnitude. However, with increasing Nb doping, the mobility continued to decrease, while the resistivity started to decrease. The normalized Nb secondary ion intensity of Nb-doped $\\mathrm{WS}_2$ films indicated the occurrence of p-type doping.","id":"train/atomic-layer-deposition/experimental-usecase/14/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/14/figure_3","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"multiple scatter plot"},{"panel_id":"d","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/Hanjie Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1256,"height":1164,"image_format":"jpeg","image_sha256":"8dc38db4214e04afd996b17ebe71f447fd490ab62cd0f46e1a9fcfa00750e9a3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":938,"height":623},{"panel_id":"b","x":938,"y":0,"width":316,"height":625},{"panel_id":"c","x":5,"y":711,"width":632,"height":395},{"panel_id":"d","x":669,"y":662,"width":569,"height":475}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_18_fig_5.jpg","caption":"FIG. 5. Imaginary part of the complex dielectric function $(\\epsilon_{2})$ for $35.3\\mathrm{nm}$ thick $\\mathrm{ZrN}$ PEALD film at $150^{\\circ}\\mathrm{C}$ determined from in-situ SE measurements. The free electron and bound electron contributions to the dielectric function of $\\mathrm{ZrN}$ film are represented by Drude (D) and Lorentz oscillators (L1 and L2), respectively.","id":"train/atomic-layer-deposition/experimental-usecase/18/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/18/fig_5","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/Triratna Muneshwar et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":611,"height":450,"image_format":"jpeg","image_sha256":"016e986a0af0d1d26ae43f19caa6b2ff72d66465b45208156eced7d6e10d658c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":611,"height":450}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the imaginary part of the complex dielectric function (ε₂) of a 35.3 nm ZrN film deposited at 150 °C, obtained from in-situ spectroscopic ellipsometry. The ε₂ spectrum is modeled using a Drude term representing free-electron (metallic) response at low photon energies and two Lorentz oscillators (L1 and L2) corresponding to bound-electron interband transitions at higher energies. The strong Drude contribution confirms the metallic nature of the PEALD-grown ZrN film.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Photon energy (eV) | Dielectric function ε₂ |\\n|---|---|\\n| 0.7 | ~2.0 |\\n| 1.0 | ~0.8 |\\n| 2.0 | ~0.6 |\\n| 3.0 | ~1.2 |\\n| 4.0 | ~2.8 |\\n| 5.0 | ~3.5 |\\n| 6.0 | ~4.0 |\\n| 7.0 | ~3.6 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The strong Drude response observed in the dielectric-function analysis demonstrates a high free-carrier concentration, confirming the metallic nature of the PEALD-grown ZrN film even at low deposition temperature. This metallic optical behavior supports the suitability of ZrN for applications such as diffusion barriers, conductive electrodes, and plasmonic or interconnect layers where both electrical conductivity and controlled thin-film growth are required.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Drude contribution dominates at low photon energies, while Lorentz oscillator contributions become prominent at higher photon energies.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Drude free-electron response at low photon energies, Lorentz oscillator L1 corresponding to interband transitions, Lorentz oscillator L2 corresponding to higher-energy electronic transitions, Combined Drude–Lorentz behavior indicative of metallic nitrides\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_25_figure_5.jpg","caption":"Figure 5. XPS $E_{\\mathrm{v}}$ spectra of the investigated (a) TGO and (b) ZGO films deposited on fused silica with varying cation ratios, $x$ .","id":"train/atomic-layer-deposition/experimental-usecase/25/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/25/figure_5","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/Adam Hultqvist et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":450,"height":675,"image_format":"jpeg","image_sha256":"7f4bb245f80c72bc8cd1cf5cd11022b1e34681e1a976e0edb9d473597108d705","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":2,"y":343,"width":448,"height":329},{"panel_id":"a","x":2,"y":3,"width":445,"height":337}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure show svalence band XPS Ev spectra as a function of binding energy for Ge doped Tin oxide, TGO.\"},{\"panel_id\":\"b\",\"text\":\"The figure show svalence band XPS Ev spectra as a function of binding energy for Ge doped Zinc oxide, ZGO.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | x = 1 | x = 0.30 | x = 0.16 | x = 0.077 | x = 0 |\\n|----------------------|---------|----------|----------|-----------|---------|\\n| 10 | 300 | 280 | 270 | 260 | 250 |\\n| 8 | 320 | 300 | 290 | 280 | 270 |\\n| 6 | 280 | 260 | 250 | 240 | 230 |\\n| 4 | 180 | 160 | 150 | 140 | 130 |\\n| 2 | 80 | 70 | 60 | 55 | 50 |\\n| 0 | 20 | 15 | 10 | 8 | 5 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | x = 1 | x = 0.37 | x = 0.32 | x = 0.19 | x = 0.032 | x = 0 |\\n|----------------------|---------|----------|----------|----------|-----------|---------|\\n| 10 | 300 | 600 | 600 | 600 | 600 | 600 |\\n| 8 | 320 | 450 | 520 | 500 | 330 | 580 |\\n| 6 | 280 | 400 | 460 | 440 | 310 | 520 |\\n| 4 | 150 | 220 | 250 | 230 | 180 | 280 |\\n| 2 | 50 | 70 | 80 | 75 | 60 | 90 |\\n| 0 | 10 | 12 | 15 | 18 | 15 | 20 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The measured XPS Ev spectra indicated small differences between the ZGO sample series with the addition of Ge (b). Similar to the TGO sample series, the binding energy scale has been aligned to the C 1s peak at 285 eV to facilitate comparison between the samples and to exclude any charging effects. Increasing the Ge content, the Ev at the surface of the samples seems to shift slightly toward higher binding energies.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The valence band (Ev) spectrum recorded for GeOy, as shown image, indicates a shift of the Ev for GeOy toward higher binding energies compared to those for ZnO and SnOy, representing a shift away from the Fermi level (EF).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The measured XPS Ev spectra (a) were similar to large tails for all of the measured TGO films, even for the SnOy. This would suggest that the Ev position at the sample surface is very similar for the investigated TGO samples. It cannot, however, be excluded that the Ev position may vary in the bulk of the samples. To facilitate the relative comparison between samples and exclude charging effects, the binding energy scale was aligned to the C 1s peak of adventitious carbon at 285.0 eV. This also resulted in an energy scale alignment of the shallow core levels for the TGO sample series. Assuming that the Ev of the surface is representable for the bulk and that the electronic and optical Eg’s are identical, the increasing Eg and the identical Ev position suggest that Ec shifts upward as the Ge content of the films increases\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_7.jpg","caption":"Figure 7. XPS results of the films grown through (a), (c) the conventional ALD process and (b), (d) the ALD-DFM process.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_7","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":667,"height":733,"image_format":"jpeg","image_sha256":"fa3ca61c9b849acf55eb9f06ac28ce1eff4bf697e907ca98f7b5b2c2247e51b4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":15,"y":37,"width":300,"height":320},{"panel_id":"b","x":367,"y":34,"width":300,"height":323},{"panel_id":"c","x":15,"y":408,"width":300,"height":325},{"panel_id":"d","x":368,"y":408,"width":299,"height":325}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a XPS spectrum, with the focus on the Germanium peaks related to Ge-O and Ge-Se. It includes experimental, simulated, and background data.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows a XPS spectrum, with the focus on the Germanium peaks related to Ge-O and Ge-Se. It includes experimental, simulated, and background data.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows a XPS spectrum, with the focus on the Selenium peaks related to Ge-Se. It includes experimental, simulated, and background data.\"},{\"panel_id\":\"d\",\"text\":\"The figure shows a XPS spectrum, with the focus on the Selenium peaks related to Ge-Se. It includes experimental, simulated, and background data.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Intensity (A.U.) |\\n|---|---|\\n| 27 | 0 |\\n| 28 | 0 |\\n| 29 | 0 |\\n| 30 | Ge-Se shoulder peak |\\n| 31 | 0 |\\n| 32 | 0 |\\n| 33 | Ge-O main peak |\\n| 34 | 0 |\\n| 35 | 0 |\\n| 36 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Intensity (A.U.) |\\n|---|---|\\n| 27 | 0 |\\n| 28 | 0 |\\n| 29 | 0 |\\n| 30 | Ge-Se peak |\\n| 31 | 0 |\\n| 32 | 0 |\\n| 33 | Ge-O peak |\\n| 34 | 0 |\\n| 35 | 0 |\\n| 36 | 0 |\"},{\"panel_id\":\"c\",\"text\":\"| Binding Energy (eV) | Intensity (A.U.) |\\n|---|---|\\n| 50 | 0 |\\n| 51 | 0 |\\n| 52 | 0 |\\n| 53 | 0 |\\n| 54 | 0 |\\n| 55 | Ge-Se peak |\\n| 56 | 0 |\\n| 57 | 0 |\\n| 58 | 0 |\\n| 59 | 0 |\\n| 60 | 0 |\"},{\"panel_id\":\"d\",\"text\":\"| Binding Energy (eV) | Intensity (A.U.) |\\n|---|---|\\n| 50 | 0 |\\n| 51 | 0 |\\n| 52 | 0 |\\n| 53 | 0 |\\n| 54 | 0 |\\n| 55 | Ge-Se peak |\\n| 56 | 0 |\\n| 57 | 0 |\\n| 58 | 0 |\\n| 59 | 0 |\\n| 60 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This can not so easily be concluded as a higher peak does not necessarily mean more of a material, as the peaks can both scale differently with densities of species.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The peak location is 55 eV.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The electrons are generated by x-rays impinging on the surface of a material.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The envelope is composed of a model for the Ge-O and the Ge-Se peaks. This together with a background line will be fitted on the experimental data.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_31_figure_4.jpg","caption":"Figure 4. Synchrotron radiation XRD results of $\\mathrm{CoSi_2}$ from PE-ALD Co by rapid thermal annealing at various annealing temperature. $[\\star \\mathrm{CoSi_2(111)}$ $\\bullet$ $\\mathrm{CoSi_2(220)}$ $\\bullet$ $\\mathrm{CoSi(210)}$ $\\blacksquare$ $\\mathrm{CoSi(211)}$ $\\pmb{\\Delta}$ $\\beta$ Co(111)].","id":"train/atomic-layer-deposition/experimental-usecase/31/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/31/figure_4","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/Han-Bo-Ram Lee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":542,"height":444,"image_format":"jpeg","image_sha256":"9f87ce6f0b667a975e574e252e4069b956f23a352e807fa5d7f71a53d466caa0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":6,"width":540,"height":437}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure shows synchrotron radiation XRD patterns of PE-ALD Co films on Si(001) after rapid thermal annealing (400–900 °C). The as-deposited film exhibits no distinct peaks, indicating an amorphous or poorly crystalline Co layer. With increasing annealing temperature, diffraction peaks corresponding to β-Co (111) appear first, followed by the emergence and strengthening of CoSi₂ (111), (220), (210), and (211) reflections at ≥700–800 °C, confirming the formation of highly crystalline CoSi₂ at elevated temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| $T_{a}$=900 °C | $T_{a}$=800 °C | $T_{a}$=600 °C | $T_{a}$=500 °C | $T_{a}$=400 °C | as-dep |\\n|---|---|---|---|---|---|\\n| ![](https://example.com/image1.png) | ![](https://example.com/image2.png) | ![](https://example.com/image3.png) | ![](https://example.com/image4.png) | ![](https://example.com/image5.png) | ![](https://example.com/image6.png) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Above approximately 700–800 °C.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Crystalline CoSi₂ is a low-resistivity, thermally stable silicide commonly used as a contact material in CMOS technology. Its formation demonstrates that PE-ALD Co films can be converted into technologically relevant silicides through post-deposition annealing, validating the process for integration into advanced semiconductor devices.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Amorphous or poorly crystalline Co (as-deposited), β-Co (111) at intermediate temperatures, CoSi₂ (111, 220, 210, 211) at high temperatures\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_35_figure_5.jpg","caption":"Figure 5. (a) Gracing incidence X-ray diffractograms of as-deposited and $\\mathrm{N}_2$ -annealed GST films. (b) Cross-section FESEM image of a GST film deposited on a high aspect-ratio trench pattern. Scale bar $= 600~\\mathrm{nm}$ .","id":"train/atomic-layer-deposition/experimental-usecase/35/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/35/figure_5","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/Viljami Pore et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":536,"height":591,"image_format":"jpeg","image_sha256":"47da395966e9f177eacfcd6047ab41f916afe91793b71cd521dcb46a2c6802cc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":1,"width":524,"height":372},{"panel_id":"b","x":1,"y":400,"width":536,"height":197}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a spectra chart with labeled peaks corresponding to different crystal structures. The intensity of the peaks varies across the 2θ range.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows a microscopic image of a high aspect ratio sample, coated with material with a scale bar indicating the measurement unit.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (°) | Intensity (a.u.) as-depos |Intensity (a.u.) annealed 130 |Intensity (a.u.) 370 |\\n|---|---|---|---|\\n| 20 | - |-|004 HCP|\\n| 25 | - |-|111 FCP, 005 HCP|\\n| 30 | -|- |002 FCC|\\n| 40 | -|- |016HCP|\\n| 42 | - |022 FCC|017HCP|\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The anneal steps transforms the amorphous film into crystalline form, where the crystalline phase is dependent on annealing temperature.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HCP\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film seems to have the same thickness throughout the trench structure, so the growth can be considered conformal.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"the width is not constant, as it varies from 600 nm to around 1.2 microns\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_37_figure_1.jpg","caption":"Figure 1. vdW epitaxy of $\\mathrm{MS}_2$ films on mica with $\\mathrm{ZrS}_2$ as an example. (a) Out-of-plane x-ray diffractograms (2 $\\theta$ and $\\theta -2\\theta$ measurements) with the (0 0 0 I) $\\mathrm{ZrS}_2$ (dashed lines) and substrate reflections marked (asterisks mark substrate peaks originating from W L $\\alpha$ and Cu K $\\beta$ radiation, see section S1). (b) In-plane $\\phi$ scans of (1 0 1 0) $\\mathrm{ZrS}_2$ (28.2° 20 $\\chi$ ) and (0 0 0) mica (19.7° 20 $\\chi$ ) reflections. The data have been offset vertically for clarity. (c) AFM image of a 7 nm $\\mathrm{ZrS}_2$ film grown on mica at $400^{\\circ}\\mathrm{C}$ using 1000 ALD cycles. (d) Schematic of the possible $\\mathrm{MS}_2$ ( $\\mathrm{M} = \\mathrm{Hf}, \\mathrm{Sn}, \\mathrm{Zr}$ ) domains on mica (for clarity, only one $\\mathrm{MS}_2$ layer is shown). (e) Schematic of a possible CSL between mica and a $0^\\circ \\mathrm{MS}_2$ domain (only bottom colour layer is shown).","id":"train/atomic-layer-deposition/experimental-usecase/37/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/37/figure_1","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/Mattinen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1134,"height":647,"image_format":"jpeg","image_sha256":"4befd9a97da96d26cad455486593d7772307a91e7acf9af164ace983031820cf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":9,"width":381,"height":321},{"panel_id":"b","x":407,"y":18,"width":342,"height":343},{"panel_id":"c","x":819,"y":16,"width":284,"height":247},{"panel_id":"d","x":9,"y":368,"width":784,"height":274},{"panel_id":"e","x":800,"y":297,"width":328,"height":342}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A degree-log plot showing the intensity of out-of-plane X-ray diffraction peaks for ZrS2 and Mica. Here ZrS2 is chosen as am example for 2D materials MS2\"},{\"panel_id\":\"b\",\"text\":\"A phase-log plot showing the intensity of in-of-plane X-ray diffraction peaks for ZrS2 and Mica.\"},{\"panel_id\":\"c\",\"text\":\"An AFM image showing the surface roughness of a material.\"},{\"panel_id\":\"d\",\"text\":\"A molecular structure diagram illustrating the domains of MS2 and Mica.\"},{\"panel_id\":\"e\",\"text\":\"A molecular structure diagram illustrating the coincidence site lattices (CSL) between Mica and MS2\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Peak Position (° 2θ) | Assignment |\\n|-----------------------|------------------|\\n| ~8 | ZrS₂ (0001) |\\n| ~15 | ZrS₂ (0002) |\\n| ~28 | Mica (004) |\\n| ~30 | Mica (006) |\\n| ~45 | Mica (0010) |\\n| ~47 | Mica (023) |\"},{\"panel_id\":\"b\",\"text\":\"| Material | Peaks (° φ) |\\n|-----------------|---------------------------------------|\\n| (10\\\\bar{1}0) ZrS₂ | ~0, ~60, ~120, ~180, ~240, ~300 |\\n| (020) mica | ~0, ~90, ~180, ~270 |\"},{\"panel_id\":\"c\",\"text\":\"| Parameter | Value |\\n|--------------|----------|\\n| Rₐ | 0.53 nm |\\n| Scan Size | 100 nm |\\n| Height Range | 12.5 nm |\"},{\"panel_id\":\"d\",\"text\":\"| Angle | Relation |\\n|-------|--------------|\\n| 0° | [010] mica |\\n| 30° | [2110] ZrS₂ |\\n| 60° | [1210] ZrS₂ |\\n| 90° | [2110] ZrS₂ |\"},{\"panel_id\":\"e\",\"text\":\"| Parameter | Value |\\n|------------------|--------------|\\n| a (mica) | ~5 Å |\\n| a (ZrS₂) | ~3.7 Å |\\n| Matching Ratio | ~7 (mica) : 5 (ZrS₂) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"XRD measurements of ZrS2 on mica showed excellent (0 0 0 1)ZrS2 ‖ (0 0 0 1) mica out-of-plane alignment, as only the (0 0 0 l) reflections of both the film and the substrate were seen in a symmetric θ − 2θ measurement and no peaks of the film were observed in an asymmetric grazing incidence (2θ) measurement.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No. With a roughness of 0.54 nm, the ZrS2 (as well as HfS2 and SnS2 films ) deposited on mica are smooth with no clear evidence of the different domains is offered by the morphology.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Despite different crystal structures, similarities in the mica and MS2 surfaces can be observed. Approximating the mica surface as hexagonal\\nallows finding coincidence site lattices (CSLs), where only some of the lattice points of MS2 and mica coincide. Due to the weak interactions between the film and the substrate, the CSL concept is particularly relevant for the vdW epitaxy.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A φ scan of the (1 0 \\\\bar(1) 0)ZrS2 reflection resulted in twelve peaks over a full 360° rotation, while six peaks were observed for the (0 2 0)mica\\nreflection. Normally, peaks are expected every 360/n degrees for a plane of n-fold symmetry. The observation of six peaks every 60° from mica, which\\nhas only mirror symmetry, has been explained by the presence of different stacking orientations. Although the 1T metal sulfides have only three-fold\\nrotational symmetry around the c-axis, the (1 0 \\\\bar(1) 0) plane has six-fold symmetry, which results in six peaks from a single in-plane orientation. Thus, at least two orientations of ZrS2 were present in rather similar amounts.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_figure_10.jpg","caption":"Figure 10. Mn K-edge XANES of (a) annealed $200\\mathrm{cLi - MnO_2}$ -600 sample compared to the corresponding unannealed one and (b) $300\\mathrm{cLi - }$ $\\mathrm{MnO}_2\\cdot$ -600 sample compared to the corresponding unannealed one. Mn K-edge EXAFS of (c) $200\\mathrm{cLi - MnO_2}$ -600 sample and the corresponding unannealed one and (d) $300\\mathrm{cLi - MnO_2}$ -600 sample with the corresponding unannealed one. Comparison of (e) Mn K-edge XANES and (f) O Kedge XANES measurements done in $45^{\\circ}$ incident angle. The graphs have been rescaled.","id":"train/atomic-layer-deposition/experimental-usecase/38/figure_10","sample_id":"atomic-layer-deposition/experimental-usecase/38/figure_10","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"},{"panel_id":"e","label":"stacked spectra chart"},{"panel_id":"f","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":842,"height":1027,"image_format":"jpeg","image_sha256":"8351e8d4687ae4b6f85d8b5ce76056a0ae63353ac3c3751f22677022650df153","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":47,"y":4,"width":397,"height":335},{"panel_id":"b","x":451,"y":2,"width":390,"height":337},{"panel_id":"c","x":47,"y":341,"width":388,"height":343},{"panel_id":"d","x":451,"y":334,"width":386,"height":349},{"panel_id":"e","x":40,"y":688,"width":397,"height":339},{"panel_id":"f","x":457,"y":688,"width":383,"height":339}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Mn K-edge XANES spectra are shown for 200cLi–MnO₂ before and after annealing at 600 °C, together with reference spectra. The main absorption edge appears near ~6560 eV in both cases. Annealing causes only a small change in the near-edge shape, suggesting limited modification of the average Mn oxidation state. The overall spectral position remains close to the LiMn₂O₄ reference.\"},{\"panel_id\":\"b\",\"text\":\"Mn K-edge XANES spectra of 300cLi–MnO₂ are compared before and after annealing at 600 °C. The annealed and unannealed curves largely overlap in the main-edge region. Minor changes are visible in the shoulder near ~6552–6554 eV. This indicates that annealing slightly modifies local Mn coordination without strongly shifting the edge energy.\"},{\"panel_id\":\"c\",\"text\":\"Mn K-edge EXAFS in R-space is shown for 200cLi–MnO₂ with and without annealing. The first peak near ~1.9 Å corresponds to Mn–O coordination. The second peak near ~2.8–2.9 Å is assigned to Mn–Mn1 interactions. Relative peak intensities change modestly after annealing, pointing to small adjustments in local structure.\"},{\"panel_id\":\"d\",\"text\":\"Mn K-edge EXAFS data for 300cLi–MnO₂ are plotted in R-space for annealed and unannealed samples. The Mn–O peak remains centered near ~1.9 Å, while the Mn–Mn1 peak appears near ~2.8–2.9 Å. Annealing mainly affects peak amplitude rather than peak position. This suggests subtle reordering rather than a structural phase change.\"},{\"panel_id\":\"e\",\"text\":\"Mn L-edge XANES spectra compare lithiated samples with Mn³⁺ and Mn⁴⁺ reference compounds. Vertical guide lines mark the Mn³⁺ feature near ~642 eV and the Mn⁴⁺ feature near ~644–645 eV. The sample spectra fall between the two references. This indicates mixed Mn³⁺/Mn⁴⁺ character rather than a single oxidation state.\"},{\"panel_id\":\"f\",\"text\":\"O K-edge XANES spectra are shown with guide lines marking Mn⁴⁺ and Mn³⁺-related features near ~529.5, ~531.0, and ~532.0 eV. The sample curves show intensity distributed across these regions. This reflects hybridization between O 2p states and Mn 3d states of different oxidation character. The spectra support the mixed-valence picture inferred from the Mn-edge data.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Trace | Feature | Energy (eV) |\\n|-------|---------|-------------|\\n| 200cLi–MnO2 | main edge/peak | ~6560 |\\n| 200cLi–MnO2 | shoulder | ~6553 |\\n| 200cLi–MnO2–600 | main edge/peak | ~6560 |\\n| 200cLi–MnO2–600 | shoulder | ~6553 |\\n| LiMn2O4 ref. | main edge/peak | ~6555–6556 |\"},{\"panel_id\":\"b\",\"text\":\"| Trace | Feature | Energy (eV) |\\n|---|---|---|\\n| 300cLi–MnO2 | main edge/peak | ~6558–6560 |\\n| 300cLi–MnO2 | shoulder | ~6552–6554 |\\n| 300cLi–MnO2–600 | main edge/peak | ~6558–6560 |\\n| 300cLi–MnO2–600 | shoulder | ~6552–6554 |\\n| LiMn2O4 ref. | main edge/peak | ~6555–6556 |\"},{\"panel_id\":\"c\",\"text\":\"| Trace | Feature | R (Å) |\\n|---|---|---|\\n| 200cLi–MnO2 | Mn–O peak | ~1.9 |\\n| 200cLi–MnO2 | Mn–Mn1 peak | ~2.8–2.9 |\\n| 200cLi–MnO2–600 | Mn–O peak | ~1.9 |\\n| 200cLi–MnO2–600 | Mn–Mn1 peak | ~2.8–2.9 |\\n| LiMn2O4 ref. | Mn–O peak | ~1.9 |\\n| LiMn2O4 ref. | Mn–Mn1 peak | ~2.8–2.9 |\"},{\"panel_id\":\"d\",\"text\":\"| Trace | Feature | R (Å) |\\n|---|---|---|\\n| 300cLi–MnO2 | Mn–O peak | ~1.9 |\\n| 300cLi–MnO2 | Mn–Mn1 peak | ~2.8–2.9 |\\n| 300cLi–MnO2–600 | Mn–O peak | ~1.9 |\\n| 300cLi–MnO2–600 | Mn–Mn1 peak | ~2.8–2.9 |\\n| LiMn2O4 ref. | Mn–O peak | ~1.9 |\\n| LiMn2O4 ref. | Mn–Mn1 peak | ~2.8–2.9 |\"},{\"panel_id\":\"e\",\"text\":\"| Trace | Feature | Energy (eV) |\\n|---|---|---|\\n| Mn2O3 ref. | Mn3+ marker line | ~642 |\\n| MnO2 ref. | Mn4+ marker line | ~644–645 |\\n| 200cLi–MnO2 | LIII peak/edge | ~642–645 |\\n| 200cLi–MnO2 | LII peak/edge | ~654–655 |\\n| 300cLi–MnO2–600 | LIII peak/edge | ~642–645 |\\n| 300cLi–MnO2–600 | LII peak/edge | ~654–655 |\"},{\"panel_id\":\"f\",\"text\":\"| Trace | Feature | Energy (eV) |\\n|---|---|---|\\n| all traces | Mn4+ marker line | ~529.5 |\\n| all traces | Mn3+ marker line | ~531.0 |\\n| all traces | Mn4+ marker line | ~532.0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The annealing treatment produces a shift in the peak to a higher energy values.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 300cLi−MnO2-600 sample shows an additional peak at ~3.5 Å in Mn K-edge EXAFS, indicating the presence of an impurity phase, likely Li2−zMnO2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"a Annealing results in changes to the edge position and post-edge features, indicating differences in the local electronic environment of Mn\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The absorption edge shifted to lower values, but the pre-edge region remained similar in both samples. The Mn K-edge EXAFS spectrum of the 200cLi−MnO2-600 sample resembles the reference LiMn2O4 even better than the corresponding unannealed 200cLi−MnO2 sample. The result suggest that annealing causes phase change.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 300cLi sample shows a clearer spectral shift and EXAFS ordering after annealing. This is likely because it starts closer to stoichiometric LiMn₂O₄, allowing annealing to more effectively perfect the spinel structure, whereas the 200cLi sample is less lithiated and thus less responsive.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The shoulder reflects changes in local Mn coordination and electronic structure. Its persistence with only minor variation after annealing indicates subtle rearrangements rather than a change in dominant bonding configuration. This is consistent with modest local ordering effects.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There is a big shift observed between the literature values and the measured values. This indicates that both materials are not entirely the same or the measurement procedure has a certain error margin.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Changes in the O K-edge after annealing suggest modifications in oxygen bonding and hybridization. Improved spectral definition implies a more stable surface oxide environment, which could reduce oxygen loss during cycling and enhance cathode stability in batteries.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Improved structural stability during cycling\\n-Reduced Jahn–Teller distortion\\n-Enhanced electronic conductivity\\n-Greater resistance to phase degradation\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"An energy range should be probed around 531 eV.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It seems that the annealing treatment removes the Mn+3 peak from the spectra.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300cLi-MnO2 without annealing treatment.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectral changes observed after annealing indicate improved structural order and phase purity in Li-MnO2 films, with the 200cLi−MnO2-600 sample closely matching LiMn2O4 and the 300cLi−MnO2-600 showing impurity-related features. Understanding these changes allows researchers to optimize annealing conditions to maximize the formation of stoichiometric LiMn2O4, reduce unwanted impurity phases, and control manganese oxidation states, ultimately enhancing lithium intercalation, electrochemical stability, and battery performance.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mn-O: the distance between manganese and oxygen, Mn-Mn1: the shortest distance to another manganese atom.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Annealing seems to remove the Mn3+ features in the fine structure of the Mn L-edge XANES as well as that of the O Kedge XANES . In both cases, the spectra resemble the LiMn2O4 reference.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They represent the first two coordination shells around Mn: the Mn-O bond distance (~1.5 Å) and the nearest Mn-Mn distance (~2.5 Å) between edge-sharing octahedra.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"LiMnO2O4, Mn2O3, and MnO2 films used as a reference. Also, 200cLi-MnO2, 300cLi-MnO2, and 200cLi-MnO2-600 without annealing treatment; and 300cLi-MnO2-600, with annealing treatment.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure compares annealed and unannealed samples using Mn K-edge XANES, Mn K-edge EXAFS, and O K-edge XANES measurements.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Comparing both edges helps relate changes in Mn oxidation state to corresponding changes in the oxygen electronic structure, improving interpretation of material behaviour.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The annealed spectrum is slightly shifted closer to the Mn2o3 reference, but the overall shape is similar.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A shift to lower binding energy signifies a decrease in the effective nuclear charge felt by the electrons, corresponding to a lower average oxidation state (e.g., shifting closer to the Mn_2O_3 ).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For 200cLi-MnO₂-600, annealing sharpens the Mn-O and Mn-Mn1 peaks, indicating improved local order matching the LiMn₂O₄ reference. For 300cLi-MnO₂-600, an unexpected peak appears at ~3.5 Å, suggesting a secondary phase with non-octahedral Mn coordination.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It likely contains an impurity phase (Li₂₋ᵤMnO₂) where Mn has ~+2 oxidation state. This explains the MnO-like pre-edge shape in XANES and the extra peak at 3.5 Å in EXAFS. XRD also detected this impurity phase.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It compares Mn K-edge XANES spectra of annealed (–600) and unannealed 200cLi–MnO₂ samples.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The anneal ensures some sort of shift of the spectrum to lower energies.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They denote the two spin-orbit split components of the Mn L-edge, arising from transitions from 2p₃/₂ (L_III) and 2p₁/₂ (L_II) core levels to empty 3d states.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All measured spectra show similar result indicating that the oxidation states are similar.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Mn L-edge: Annealing removes Mn3+ features, spectra resemble LiMn2O4 reference, O K-edge: Annealing removes features associated with reduced Mn oxidation states spectra resemble LiMn2O4 reference, Overall: Spectral changes indicate improved phase purity and structural ordering after annealing\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"d The EXAFS panels provide information about changes in local atomic coordination and bonding distances around Mn.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The annealed sample.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"LiMn2O4,Mn2O3,MnO2\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Annealing reduces disorder and sharpens the Mn–O and Mn–Mn coordination peaks in EXAFS. This indicates a more ordered local structure, with bond lengths approaching those of well-defined spinel LiMn₂O₄.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mn–O appears at lower R (≈1.9 Å).\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_figure_4.jpg","caption":"Figure 4. (a) Mn K-edge XANES of samples $\\mathrm{MnO}_2$ , $10\\mathrm{Li} - \\mathrm{MnO}_2$ , and $50\\mathrm{Li} - \\mathrm{MnO}_2$ measured in the TEY mode. (b) FT of the Mn K-edge EXAFS of the same samples. Crystal structures of $\\beta -\\mathrm{MnO}_2$ (ICDD PDF 24-0735) visualized with the VESTA software. (c) Mn L-edge XANES measured in $45^{\\circ}$ incident angle. The graphs have been rescaled.","id":"train/atomic-layer-deposition/experimental-usecase/38/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/38/figure_4","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":978,"height":558,"image_format":"jpeg","image_sha256":"1be8dd0915ae87bb7e84cad9ac3f4ef5d636254a567772228f3a5ba0eb0daf38","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":10,"width":484,"height":548},{"panel_id":"b","x":502,"y":7,"width":323,"height":268},{"panel_id":"c","x":495,"y":281,"width":399,"height":275}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays the X-ray absorption near-edge structure (XANES) of MnO2, 10cLi-MnO2, 50cLi-MnO2, MnO2 ref, LiMn2O4 ref, and MnO ref samples.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows Fourier Transform (FT) of the Mn K-edge extended X-ray absorption near-edge structure (EXAFS) of MnO2, 10cLi-MnO2, 50cLi-MnO2, MnO2 ref, LiMn2O4 ref, and MnO ref samples.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the absorption spectra of MnO2, 10cLi-MnO2, 50cLi-MnO2, MnO2 ref, LiMn2O4 ref, and MnO ref samples, as a function of the energy (eV), highlighting the Mn+3 and Mn+4.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Energy Range (eV) | Key Features |\\n|-----------------|--------------------|-----------------------------------------------|\\n| MnO₂ | 6540–6580 | Strong edge at ~6555 eV; post-edge oscillations |\\n| 10cLi-MnO₂ | 6540–6580 | Slight edge shift; reduced intensity |\\n| 50cLi-MnO₂ | 6540–6580 | Further edge shift; more pronounced changes |\\n| MnO₂ ref. | 6540–6580 | Baseline for Mn⁴⁺ |\\n| LiMn₂O₄ ref. | 6540–6580 | Spinel reference |\"},{\"panel_id\":\"b\",\"text\":\"| Peak Position (Å) | Assignment |\\n|--------------------|-----------|\\n| ~1.5 | Mn–O |\\n| ~2.8 | Mn–Mn1 |\\n| ~3.4 | Mn–Mn2 |\"},{\"panel_id\":\"c\",\"text\":\"| Energy (eV) | Feature |\\n|-------------|----------|\\n| ~641 | Mn³⁺ (LIII) |\\n| ~644 | Mn⁴⁺ (LIII) |\\n| ~652 | LII region |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Mn-Mn2 bond decreases as the number of lithium cycles increases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The MnO2, 10cLi0MnO2, and 50cLi-Mno2 samples exhibit the same intensity of Mn-O bonds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 641 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The β-MnO₂ reference.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mn-O, Mn-Mn₁, and Mn-Mn2.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Immediate reduction of manganese occurs as soon as lithium is inserted, as the absorption edge shifts to lower energy in the Mn K-edge XANES.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The main Mn-O coordination peak decreases in intensity and shifts slightly. This indicates increasing structural disorder and a change in bond lengths as lithium is inserted into the MnO₂ lattice.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It indicates the β-MnO₂ pyrolusite structure, where Mn-Mn2 (~3.5 Å) corresponds to corner-sharing octahedra. This peak is absent in spinel LiMn₂O₄.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The FT representation reorganizes the oscillatory EXAFS signal into peaks that correspond more directly to real-space neighbor shells. That helps separate first-shell Mn–O from higher-shell Mn–Mn contributions in a visually interpretable way. For comparison across samples, it also makes changes in peak intensity and definition easier to track at a glance.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lithium replaces some of the manganese in the crystal, mostly replacing the Mn in the Mn-Mn2 position.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in subfigure a, the reduction of Mn can be observed as it shifts to lower energy values.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 10cLi-MnO2 samples, due to the peaks are present in lowest energy values.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The absorption edge shifts to lower energy, indicating reduction of manganese.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ICDD PDF 35-0782\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, it does not. The blue line overlaps almost perfectly with the black line (β-MnO₂) and looks completely different from the dashed line (LiMn₂O₄). This confirms that 50 cycles are insufficient to induce a bulk phase transformation to the spinel structure; the material remains in the precursor phase.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 50cLi sample shows more advanced conversion. Its K-edge position is closer to the LiMn₂O₄ reference, and its L-edge fine structure more closely resembles the spinel than the 10cLi sample does.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They closely resemble the MnO₂ powder reference, indicating that β-MnO₂ remains the dominant phase at low lithium concentrations (x < 0.5).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Crystal field splitting of Mn 3d orbitals in octahedral coordination—t₂g (lower energy) and eg (higher energy) states visible in the pre-edge region.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The absorption edge shifts to lower energy and Mn³⁺ features appear in the L-edge spectra even for 10cLi-MnO₂, indicating partial reduction of Mn⁴⁺ to Mn³⁺.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Reference compounds anchor spectral features to known Mn oxidation states and coordination environments. This enables relative positioning of unknown or modified samples along a redox continuum. Such benchmarking is critical when evaluating lithiation-induced electronic changes.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In panel (a), the MnO reference peaks at lower energy (~6556.5 eV), LiMn₂O₄ sits higher (~6560.5 eV), and the MnO₂-based samples peak higher still (≈6562 eV range, depending on lithiation).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, especially the literature values for MnO2 and LiMn2O4 nicely overlap with the measured values for MnO2 and 50cLi-MnO2 respectively.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The peak absorption shifts to higher energies for MnO2 with respect to MnO.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Mn–O coordination, Mn–Mn₁ interactions between edge-sharing octahedra, Mn–Mn₂ interactions between corner-sharing octahedra\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Already from the 10cLi-MnO2 sample onward.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. The L-edge XANES measures the absorption by the electric dipole-allowed transition from the\\n2p orbital to the unfilled 3d orbital of a transition metal resulting in an intense and feature-rich LII,III-edge XANES spectra.\\n2. The K-edge measures dipole-forbidden transition from the 1s orbital to the 3d orbital and hence are of lower-intensity.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Differences between surface (L-edge) and bulk (K-edge) spectra suggest that the chemical state of manganese at the surface differs from the interior. This implies lithiation may proceed non-uniformly, with the surface transforming first.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They provide fixed reference energies in the L₃ region to help relate changes in the sample line shape/position to Mn³⁺- and Mn⁴⁺-associated spectral features.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the lithium content in the film seems to induce a shift in oxidation state of Mn, where Mn3+ shifts towards Mn4+.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Mn K-edge XANES shows a systematic shift of the absorption edge to lower energy with lithium insertion, confirming manganese reduction, while the preservation of pre-edge features indicates minimal distortion of the local coordination environment. The FT EXAFS spectra further demonstrate that the Mn–O, Mn–Mn₁, and Mn–Mn₂ coordination peaks remain comparable to the β-MnO₂ reference. In addition, the Mn L-edge XANES measured at a bulk-sensitive incident angle reveals increased Mn³⁺ contributions without loss of structural features. Together, these observations indicate that lithium insertion alters the manganese oxidation state while maintaining the fundamental β-MnO₂ framework.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_figure_6.jpg","caption":"Figure 6. (a) Mn K-edge XANES of samples $100\\mathrm{cLi - MnO}_2 - 300\\mathrm{cLi - MnO}_2$ measured in TEY mode. (b) FT of the Mn K-edge EXAFS of the same samples. The crystal structure of $\\mathrm{LiMn}_2\\mathrm{O}_4$ (ICDD PDF 35-0782) is visualized with the VESTA software.25","id":"train/atomic-layer-deposition/experimental-usecase/38/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/38/figure_6","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":839,"height":572,"image_format":"jpeg","image_sha256":"d69fef778b910597982e7a3a4e5c1623a3c866f474b23f622a87f6a84eebff69","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":507,"height":567},{"panel_id":"b","x":497,"y":9,"width":342,"height":274},{"panel_id":"c","x":537,"y":301,"width":234,"height":196}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Compares Mn K-edge XANES (TEY) spectra of 100c–300c Li-treated MnO₂ against MnO₂, LiMn₂O₄, and MnO references, with near-edge and pre-edge features (t₂g/e_g region) highlighted in the inset. Subtle shifts in white-line shape and near-edge intensity indicate progressive modification of Mn electronic structure with increasing lithiation.\"},{\"panel_id\":\"b\",\"text\":\"Shows Fourier-transformed Mn K-edge EXAFS, where the Mn–O first-shell peak and Mn–Mn coordination feature evolve across cycle number, suggesting increasing local disorder and altered medium-range ordering. The LiMn₂O₄ structure schematic provides structural context for interpreting Mn–O and Mn–Mn pathways associated with a lithiated spinel-like environment.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Trace | Feature | Energy (eV) |\\n|---|---|---|\\n| 100cLi–MnO₂ | t₂g pre-edge (inset marker) | ~6539.5 |\\n| 100cLi–MnO₂ | e_g pre-edge (inset marker) | ~6542.2 |\\n| 100cLi–MnO₂ | white-line maximum | ~6561.5–6562.0 |\\n| 200cLi–MnO₂ | white-line maximum | ~6561.5–6562.0 |\\n| 300cLi–MnO₂ | white-line maximum | ~6561.5–6562.0 |\\n| LiMn₂O₄ ref. | white-line maximum | ~6559.5–6560.0 |\\n| MnO ref. | white-line maximum | ~6556–6557 |\\n| MnO₂ ref. | white-line maximum | ~6562 |\"},{\"panel_id\":\"b\",\"text\":\"| Trace | Peak assignment | R (Å) |\\n|---|---|---|\\n| 100cLi–MnO₂ | Mn–O (first shell) | ~1.7–1.8 |\\n| 100cLi–MnO₂ | Mn–Mn1 | ~2.7–2.9 |\\n| 200cLi–MnO₂ | Mn–O (first shell) | ~1.7–1.8 |\\n| 200cLi–MnO₂ | Mn–Mn1 | ~2.7–2.9 |\\n| 300cLi–MnO₂ | Mn–O (first shell) | ~1.7–1.8 |\\n| 300cLi–MnO₂ | Mn–Mn1 | ~2.7–2.9 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The peak with the highest intensity is related to the Mn-O peak.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The pre-edge feature corresponding to the 1s → 3d transition.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Rutile phase has varied Mn-Mn distances (edge vs. corner sharing), while the Spinel phase has a uniform, highly symmetric 3D arrangement , resulting in a single primary neighbor distance.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3D Diffusion Channels. The Spinel structure has an interconnected 3D network of tunnels for Lithium movement, whereas Rutile only has narrow 1D channels that block easily.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Mn–O peak reflects coherence and bond-length distribution within MnO₆ octahedra. Changes in peak intensity or width suggest increasing local disorder or mixed valence, while persistence of the peak indicates retention of octahedral coordination despite electronic changes.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Greater risk of structural instability during cycling\\n-Transport heterogeneity across the film\\n-Higher likelihood of capacity fade\\n-Increased sensitivity to degradation reactions\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The XANES spectra show a systematic shift of the absorption edge to lower energies and increased pre-edge intensities with higher lithium content, indicating reduction of Mn and the presence of JT-active Mn³⁺ ions. The EXAFS spectra reveal only Mn–O and Mn–Mn1 peaks, with diminished intensity at higher lithium levels, reflecting local structural distortion around manganese. The absence of the Mn–Mn2 peak confirms that LiMn₂O₄ is the dominant phase. Together, these observations demonstrate that lithium insertion reduces the average oxidation state of manganese while slightly distorting the local octahedral environment without forming significant new phases.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Mn-O distance seems to be slightly bigger than the Li-O distance. This can also be concluded from the tetrahedral and octahedral structures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Mn–O peak: indicates the local Mn–O coordination environment, Mn–Mn1 peak: represents interactions between edge-sharing Mn octahedra, Absence of Mn–Mn2 peak: confirms LiMn₂O₄ is the dominant phase and that corner-sharing octahedra are not present\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectra for 100 and 200 cycles of lithium have almost the same absorbance, indicating that there is no additional lithium incorporation, so yes there is a delay.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The measured spectra deviate the most from the MnO reference spectra, so this material is likely not present.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300cLi (Yellow). Its shape aligns with the reference, whereas the Green line is still transitioning.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Clear peak splitting indicates a well-defined crystal field. If the lattice were disordered or amorphous, these features would be smeared out.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Reference spectra anchor oxidation-state and coordination interpretation. MnO₂ represents a more oxidized environment, MnO a reduced state, and LiMn₂O₄ a lithiated spinel-like framework. Comparing edge position, white-line shape, and near-edge features allows lithiation-induced electronic changes to be interpreted relative to these well-defined benchmarks.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Increasing cycles indicate progressive modification toward a more lithiated, Mn-reduced electronic environment.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_45_figure_2.jpg","caption":"Figure 2. (Color online) The imaginary part of the dielectric function $(\\epsilon_2)$ for $\\mathrm{Pt}$ and $\\mathrm{PtO_2}$ as determined by in situ SE measurements evaluated using Drude-Lorentz and Tauc-Lorentz parametrizations, respectively.","id":"train/atomic-layer-deposition/experimental-usecase/45/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/45/figure_2","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":603,"height":472,"image_format":"jpeg","image_sha256":"effd1e261b3eeb9796130e692b3a893083c4ab7e509a274e067bd6105463310d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":3,"width":598,"height":463}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the dielectric function ε₂ of Pt and PtO₂ as a function of photon energy in electron volts (eV). The data points for Pt follow a Drude-Lorentz model, while those for PtO₂ follow a Tauc-Lorentz model.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Photon energy (eV) | Dielectric function ε₂: Pt (Drude-Lorentz) | Dielectric function ε₂: PtO2 (Tauc-Lorentz) |\\n|---|---|---|\\n| 0.7 | 100 | 0 |\\n| 1 | 72 | 0 |\\n| 2 | 21 | 2 |\\n| 3 | 11 | 6 |\\n| 4 | 7 | 9 |\\n| 5 | 5 | 8 |\\n| 6 | 4 | 6 |\\n| 6.5 | 5.4 | 4.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Platinum (Pt) is the conductor. In the plot, Pt absorbs light very strongly at low photon energies, which happens when a material has lots of free electrons. High density of free electrons is a defining characteristic of conductive materials.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"PtO₂ has a band gap. The ε₂ response stays low at low photon energies and then shows a clear onset of stronger absorption only above a threshold energy, which is characteristic of interband absorption across a gap. This behavior is characteristic of semiconductors.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Pt.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 3.5 eV.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_49_figure_3.jpg","caption":"Figure 3. XPS spectra of a,c) Mo 3d and b,d) S 2p for the as-deposited $\\mathrm{MoS_2}$ film on $\\mathrm{SiO_2}$ a,b) before and c,d) after in situ sulfurization at $300^{\\circ}C$ with $\\mathsf{H}_2\\mathsf{S}$ TEM images (left and right down) and SAED pattern (right up) of $\\mathrm{MoS_2}$ deposited onto CNTs e) before and f) after in situ sulfurization at $300^{\\circ}C$ with $\\mathsf{H}_2\\mathsf{S}$ The green arcs indicate graphite carbon, while the red ones indicate the 2H $\\mathrm{MoS_2}$ The yellow mark in (e) suggests the as-deposited amorphous $\\mathrm{MoS_2}$ film, while the lattice fringes in (f) suggest the (002) plane of crystalline $\\mathrm{MoS_2}$ layers.","id":"train/atomic-layer-deposition/experimental-usecase/49/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/49/figure_3","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/Shen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1002,"height":642,"image_format":"jpeg","image_sha256":"04647c06037bbbbc209abff1966342a0587682d9b879224bd7e16f3e8e575dd0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":48,"y":6,"width":230,"height":284},{"panel_id":"b","x":281,"y":4,"width":228,"height":279},{"panel_id":"c","x":4,"y":282,"width":277,"height":357},{"panel_id":"d","x":278,"y":287,"width":232,"height":353},{"panel_id":"e","x":520,"y":1,"width":479,"height":318},{"panel_id":"f","x":520,"y":327,"width":480,"height":311}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS Deconvolution (a–d):The figure presents a detailed analysis of the chemical and structural effects of in situ sulfurization (annealing in H₂S at 300 °C) on ALD-grown MoS₂ films.As-deposited film, The initial film shows a mixed chemical state. Panel (a) reveals a dominant Mo⁶⁺ component (purple peak), typically associated with MoO₃ or residual precursor species, along with the desired Mo⁴⁺ signal.\"},{\"panel_id\":\"b\",\"text\":\"This spectra displays a strong S⁰/S₂²⁻ contribution (yellow peak), indicating excess elemental sulfur or polysulfide species.\"},{\"panel_id\":\"c\",\"text\":\"After sulfurization : The sulfurization treatment significantly improves film stoichiometry. Panel (c) shows that the Mo⁶⁺ component is nearly eliminated, leaving a sharp and dominant Mo⁴⁺ doublet characteristic of MoS₂.\"},{\"panel_id\":\"d\",\"text\":\"This image similarly shows a strong reduction of defect-related sulfur species, with the spectrum now dominated by the S²⁻ lattice peak, confirming improved chemical purity and sulfide formation.\"},{\"panel_id\":\"e\",\"text\":\"The figure displays high-resolution transmission electron microscopy (HRTEM) images of layered materials, with inset diffraction patterns indicating crystalline structures.\"},{\"panel_id\":\"f\",\"text\":\"The figure displays high-resolution transmission electron microscopy (HRTEM) images of layered materials, with inset diffraction patterns indicating crystalline structures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Intensity (a. u.) |\\n|---|---|\\n| 240 | Mo6+ |\\n| 235 | Mo4+ |\\n| 230 | S0/S2- |\\n| 225 | S2- |\\n| 168 | S0/S2- |\\n| 164 | S2- |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Intensity (a. u.) |\\n|---|---|\\n| 168 | S0/S2- |\\n| 164 | S2- |\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The as-deposited film (panel a) contains a large fraction of Mo⁶⁺ species (oxide-related defects), which act as scattering centers and charge trap states that degrade electron mobility. The sulfurization step (panel c) is essential because it chemically reduces these oxidized defects, converting insulating or defective MoOₓ regions into the semiconducting Mo⁴⁺ (MoS₂) phase required for efficient charge transport.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Sulfurization reduces Mo⁶⁺ oxides (Mo-O) to Mo⁴⁺ sulfides (Mo-S) and converts S⁰/S₂²⁻ species to S²⁻, improving stoichiometry. Structurally, it transforms the film from amorphous (no lattice fringes) to crystalline 2H-MoS₂, evident in the appearance of (002) lattice planes and sharp hexagonal SAED rings.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sulfurized crystalline film is preferable due to its better stoichiometry, higher crystallinity, and more active basal planes. The trade-off is the added thermal budget (300°C) and process complexity of an in-situ or post-deposition anneal, which may not be compatible with temperature-sensitive substrates.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The S₂²⁻ species are chemically reactive and typically reside at grain boundaries or surface sites. If retained in the film, these excess sulfur species can react with contact metals such as Ag or Cu to form metal sulfides (e.g., Ag₂S) at the interface. This reaction increases contact resistance and can lead to electrode corrosion and long-term device failure. The sulfurization step removes this excess sulfur, stabilizing the metal–semiconductor interface.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_1.jpg","caption":"Fig. 1. FTIR spectra of the initial TiN surface terminated with $\\mathrm{NH}_3$ . species during the third TDMAT exposure at $152^{\\circ}\\mathrm{C}$ . The FTIR spectra have been displaced for clarity in presentation.","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_1","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":672,"height":636,"image_format":"jpeg","image_sha256":"78ced29b5c3fcbea11f2783271754ce826f8fd33970a1c34b2331d865c28ce1b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":670,"height":633}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents stacked FTIR spectra of an initially NH₃-terminated TiN surface recorded during the third TDMAT exposure at 152 °C. With increasing TDMAT exposure from 0 to 33 Torr·min, the N–H stretching feature near ~3300 cm⁻¹ decreases in relative intensity. Concurrently, strong C–H stretching bands appear and grow in the 2800–3000 cm⁻¹ region. The spectra are vertically offset, but the systematic evolution of these bands indicates progressive surface modification during exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Frequency (cm⁻¹) | Infrared Absorbance | Feature |\\n|---|---|---|\\n| 3350 | 0.82 | N–H stretching region (low exposure) |\\n| 2950 | 0.90 | C–H stretch onset |\\n| 2920 | 1.05 | C–H asymmetric stretch (increasing exposure) |\\n| 2850 | 0.98 | C–H symmetric stretch |\\n| 2920 | 1.30 | C–H asymmetric stretch (33 Torr·min) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As TDMAT exposure increases, the N–H stretching band near ~3300 cm⁻¹ decreases in relative intensity. At the same time, new and stronger C–H stretching features appear between ~2800 and 3000 cm⁻¹. This shift indicates a change in the dominant surface-bound species during exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The C–H stretching region between ~2800 and 3000 cm⁻¹.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"C–H stretching vibrations are characteristic of organic ligands containing methyl or alkyl groups. The growth of these bands indicates the presence of carbon-containing surface species following TDMAT exposure. Their appearance coincides with increased exposure, suggesting accumulation of precursor-derived fragments.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, because the figure does not show saturation behavior as a function of exposure time or cycles.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_2.jpg","caption":"Fig. 2. FTIR spectra of the initial TiN surface terminated with $\\mathrm{Ti(N(CH_3)_2)_x}^*$ species during the fourth $\\mathrm{NH_3}$ exposure at $152^{\\circ}\\mathrm{C}$ . The FTIR spectra are again offset for clarity in presentation.","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_2","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":669,"height":636,"image_format":"jpeg","image_sha256":"b4e069a6132c1affd9432df1de14e61b1763956660df5acbc23c894f46274bfc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":666,"height":631}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents stacked FTIR spectra of a TiN surface terminated with Ti(N(CH₃)₂)ₓ species during the fourth NH₃ exposure at 152 °C. As the NH₃ dose increases from 0 to 3600 Torr·min, N–H stretching features in the ~3400–3200 cm⁻¹ region grow in intensity, while C–H stretching bands in the ~3000–2800 cm⁻¹ region diminish. These opposing trends indicate replacement of methyl-containing ligands by NHₓ species on the surface. The vertical offsets emphasize qualitative spectral evolution rather than absolute absorbance.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Frequency region (cm⁻¹) | Vibrational assignment | Change with NH3 exposure |\\n|-------------------------|------------------------|--------------------------|\\n| ~3400–3200 | N–H stretches | Increase with NH3 exposure, strongest at high doses |\\n| ~3000–2800 | C–H stretches | Decrease with increasing NH3 exposure |\\n| 3800–2600 | Baseline region | Spectra vertically offset for clarity, not quantitative |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"NH₃ exposure dose (Torr·min).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Stronger N–H bands at high exposure\\n-Weaker C–H bands at high exposure\\n-Clearer NH₃-induced surface modification\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"NHₓ-terminated species.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_52_figure_8.jpg","caption":"Figure 8. Raman measurements for $\\mathrm{LiCoO_2}$ annealed at $700^{\\circ}\\mathrm{C}$ for 6 minutes compared to as-deposited $\\mathrm{LiCoO_2}$ and the theoretical spectrum of $\\mathrm{Co_3O_4}$ . The used Co:Li dosing ratio was 2:1 $(x = 2)$ .","id":"train/atomic-layer-deposition/experimental-usecase/52/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/52/figure_8","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/Donders et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":666,"height":475,"image_format":"jpeg","image_sha256":"a77242ddd29e7e799617e39dcf5e60b01b162484a9074ecb2757da6f56a41b90","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":661,"height":467}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays Raman spectra of LiCoO₂ in two states: 'as-deposited' and 'annealed'. Peaks at 486 cm⁻¹, 520 cm⁻¹, and 596 cm⁻¹ are labeled, along with a Si peak at 520 cm⁻¹\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Raman shift, cm⁻¹ | Peak assignment | LiCoO₂ as-deposited | LiCoO₂ annealed |\\n|---|---|---|---|\\n| 200 | baseline | 0.05 | 0.05 |\\n| 486 | LiCoO₂ HT | 0.25 | 0.35 |\\n| 520 | Si | 1.0 | 0.85 |\\n| 596 | LiCoO₂ HT | 0.45 | 0.70 |\\n| 800 | baseline | 0.05 | 0.08 |\\n| 1000 | baseline | 0.05 | 0.08 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"700 C for 6 minutes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Black is LiCoO2 as deposited and red is LiCoO2 annealed.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The X ray diffraction peak near 19 degrees can overlap between Co3O4 (111) and LiCoO2 (003), so XRD alone cannot unambiguously identify the phase. Raman provides additional phase specific information. In particular, the presence of LiCoO2 high temperature phase modes near 486 and 596 cm to the power of minus 1 supports crystalline LiCoO2 after annealing, and the paper notes that a distinct Co3O4 peak near 693 cm to the power of minus 1 would be expected if a significant Co3O4 fraction were present.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_57_figure_4.jpg","caption":"Figure 4. (a) Contour plot of XRD patterns measured from CsI films on which $\\mathrm{PbI}_2$ was deposited with different number of cycles at $75^{\\circ}C$ b Relative intensity (peak area) of different phases in the patterns from panel (a) as a function of the number of $\\mathrm{PbI}_2$ deposition cycles. (c) Contour plot of XRD patterns measured during an anneal of the CsI film after $3000\\mathrm{PbI}_2$ deposition cycles at $75^{\\circ}C$ d) XRD patterns of CsI films after 3000 and $4000\\mathrm{PbI}_2$ deposition cycles at $100^{\\circ}\\mathrm{C}$ The as-deposited CsI film pattern is also shown for reference. (e) Contour plot of XRD patterns measured from CsI films on which $\\mathrm{PbI}_2$ was deposited with different number of cycles at $100^{\\circ}\\mathrm{C}$ (f) Relative intensity (peak area) of different phases in the patterns from panel (e) as a function of the number of $\\mathrm{PbI}_2$ deposition cycles. CsI films $(100\\mathrm{nm})$ were deposited at $150^{\\circ}C$ with 300 cycles. The pulse durations were $1.5~s$ for $\\mathrm{Cs(btsa)}$ and $1.0~\\mathrm{s}$ for $\\mathrm{SnI}_4$ and purge durations were $1.0~\\mathrm{s}$ In the $\\mathrm{PbI}_2$ deposition, the durations of the precursor pulses were 0.8 and $2.0~\\mathrm{s}$ for $\\mathrm{Pb(btsa)}_2$ and $\\mathrm{SnI}_4,$ respectively, whereas purge durations were $1.0~\\mathrm{s}$","id":"train/atomic-layer-deposition/experimental-usecase/57/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/57/figure_4","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"},{"panel_id":"e","label":"multi spectra chart"},{"panel_id":"f","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/Weia et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1180,"height":1295,"image_format":"jpeg","image_sha256":"68afe12a713064dea26fbb7589e8ff6afb6a5abe4e1da338d2c65998f63c9643","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":11,"y":18,"width":637,"height":423},{"panel_id":"b","x":675,"y":13,"width":500,"height":422},{"panel_id":"c","x":8,"y":436,"width":637,"height":425},{"panel_id":"d","x":684,"y":448,"width":493,"height":417},{"panel_id":"e","x":9,"y":872,"width":631,"height":423},{"panel_id":"f","x":665,"y":873,"width":511,"height":418}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A spectra chart displaying XRD intensity as a function of 2θ for CsI films after deposition of PbI₂ with increasing ALD cycles at 75 °C. The contour plot reveals the progressive evolution of crystalline phases with PbI₂ loading.\"},{\"panel_id\":\"b\",\"text\":\"A line chart showing changes in relative XRD peak intensity (peak area) as a function of PbI₂ deposition cycles at 75 °C. This plot quantifies the growth, saturation, and transition of different phases identified in panel (a).\"},{\"panel_id\":\"c\",\"text\":\"A spectra chart displaying XRD intensity versus 2θ measured during annealing of the CsI film after 3000 PbI₂ deposition cycles at 75 °C. The data capture thermally induced phase transformations and enhanced crystallinity during the anneal.\"},{\"panel_id\":\"d\",\"text\":\"A spectra chart showing XRD intensity as a function of 2θ for CsI films after 3000 and 4000 PbI₂ deposition cycles at 100 °C, together with the as-deposited CsI reference. The patterns highlight temperature-dependent differences in phase formation and stability.\"},{\"panel_id\":\"e\",\"text\":\"A spectra chart displaying XRD intensity versus 2θ for CsI films with increasing PbI₂ deposition cycles at 100 °C. Compared to 75 °C, the phase evolution occurs more rapidly, indicating enhanced reaction kinetics.\"},{\"panel_id\":\"f\",\"text\":\"A line chart showing changes in relative XRD peak intensity (peak area) as a function of PbI₂ deposition cycles at 100 °C. The results confirm faster conversion and the eventual accumulation of excess PbI₂ at higher cycle numbers.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Diffraction Peak (2θ°) | Phase | Color Code |\\n|-----------------------|-------|------------|\\n| 9.8° | δ-CsPbI₃ | Yellow |\\n| 12.6° | PbI₂ (6H) | Pink |\\n| 13.1° | δ-CsPbI₃ | Yellow |\\n| 14.3° | γ-CsPbI₃ | Black |\\n| 20.3° | γ-CsPbI₃ | Black |\\n| 25.4° | PbI₂ (6H) | Pink |\\n| 25.8° | δ-CsPbI₃ | Yellow |\\n| 26.5° | δ-CsPbI₃ | Yellow |\\n| 27.6° | CsI | Blue |\\n| 28.5° | γ-CsPbI₃ | Black |\\n| 28.8° | γ-CsPbI₃ | Black |\\n| 34.2° | δ-CsPbI₃ | Yellow |\\n| 38.4° | PbI₂ (6H) | Pink |\\n| 39.5° | CsI | Blue |\\n| 44.5° | PbI₂ (6H) | Pink |\\n| 49.1° | CsI | Blue |\"},{\"panel_id\":\"b\",\"text\":\"| PbI₂ Deposition Cycles | XRD Intensity (%) | Phase (75 °C) |\\n|----------------------:|-----------------:|---------------|\\n| 0 | 100 | CsI |\\n| 0 | 0 | γ-CsPbI₃ |\\n| 0 | 0 | δ-CsPbI₃ |\\n| 0 | 0 | PbI₂ |\\n| 500 | 50 | CsI |\\n| 500 | 50 | γ-CsPbI₃ |\\n| 500 | 0 | δ-CsPbI₃ |\\n| 500 | 0 | PbI₂ |\\n| 1500 | 27 | CsI |\\n| 1500 | 18 | γ-CsPbI₃ |\\n| 1500 | 42 | δ-CsPbI₃ |\\n| 1500 | 12 | PbI₂ |\\n| 2500 | 23.5 | CsI |\\n| 2500 | 9 | γ-CsPbI₃ |\\n| 2500 | 43 | δ-CsPbI₃ |\\n| 2500 | 24 | PbI₂ |\\n| 3000 | 16 | CsI |\\n| 3000 | 0 | γ-CsPbI₃ |\\n| 3000 | 47 | δ-CsPbI₃ |\\n| 3000 | 35 | PbI₂ |\"},{\"panel_id\":\"c\",\"text\":\"| Diffraction Peak (2θ°) | Phase | Color Code |\\n|-----------------------|-------|------------|\\n| ∼10.0° | δ-CsPbI₃ | Yellow |\\n| ∼12.6° | PbI₂ (6H) | Pink |\\n| ∼13.1° | δ-CsPbI₃ | Yellow |\\n| ∼14.3° | γ-CsPbI₃ | Black |\\n| ∼20.3° | γ-CsPbI₃ | Black |\\n| ∼25.4° | PbI₂ (6H) | Pink |\\n| ∼25.8° | δ-CsPbI₃ | Yellow |\\n| ∼26.5° | δ-CsPbI₃ | Yellow |\\n| ∼27.2° | δ-CsPbI₃ | Yellow |\\n| ∼27.8° | CsI | Light Blue |\\n| ∼28.5° | γ-CsPbI₃ | Black |\\n| ∼29.0° | γ-CsPbI₃ | Black |\\n| ∼31.5° | δ-CsPbI₃ | Yellow |\\n| ∼34.1° | PbI₂ (6H) | Pink |\"},{\"panel_id\":\"d\",\"text\":\"| Diffraction Peak (2θ°) | Phase | Color Code |\\n|-----------------------|-------|------------|\\n| ∼9.8° | δ-CsPbI₃ | Yellow |\\n| ∼13.0° | δ-CsPbI₃ | Yellow |\\n| ∼14.3° | γ-CsPbI₃ | Black |\\n| ∼20.2° | γ-CsPbI₃ | Black |\\n| ∼25.8° | δ-CsPbI₃ | Yellow |\\n| ∼26.5° | δ-CsPbI₃ | Yellow |\\n| ∼27.2° | δ-CsPbI₃ | Yellow |\\n| ∼27.6° | CsI | Blue |\\n| ∼28.3° | γ-CsPbI₃ | Black |\\n| ∼28.9° | γ-CsPbI₃ | Black |\\n| ∼31.5° | δ-CsPbI₃ | Yellow |\\n| ∼41.0° | γ-CsPbI₃ | Black |\\n| ∼49.0° | CsI | Blue |\"},{\"panel_id\":\"e\",\"text\":\"| Diffraction Peak (2θ°) | Phase | Color Code |\\n|-----------------------|-------|------------|\\n| ∼9.8° | δ-CsPbI₃ | Yellow |\\n| ∼13.1° | δ-CsPbI₃ | Yellow |\\n| ∼14.3° | γ-CsPbI₃ | Black |\\n| ∼20.3° | γ-CsPbI₃ | Black |\\n| ∼25.8° | δ-CsPbI₃ | Yellow |\\n| ∼26.5° | δ-CsPbI₃ | Yellow |\\n| ∼27.2° | δ-CsPbI₃ | Yellow |\\n| ∼27.7° | CsI | Blue |\\n| ∼28.5° | γ-CsPbI₃ | Black |\\n| ∼29.0° | γ-CsPbI₃ | Black |\\n| ∼31.5° | δ-CsPbI₃ | Yellow |\\n| ∼38.0° | δ-CsPbI₃ | Yellow |\\n| ∼41.2° | γ-CsPbI₃ | Black |\\n| ∼49.1° | CsI | Blue |\"},{\"panel_id\":\"f\",\"text\":\"| PbI₂ Deposition Cycles | XRD Intensity (%) | Phase (100 °C) |\\n|----------------------:|-----------------:|----------------|\\n| 0 | 0 | γ-CsPbI₃ |\\n| 0 | 100 | CsI |\\n| 0 | 0 | δ-CsPbI₃ |\\n| 500 | 50 | γ-CsPbI₃ |\\n| 500 | 50 | CsI |\\n| 500 | 0 | δ-CsPbI₃ |\\n| 1000 | 70 | γ-CsPbI₃ |\\n| 1000 | 30 | CsI |\\n| 1000 | 0 | δ-CsPbI₃ |\\n| 1500 | 85 | γ-CsPbI₃ |\\n| 1500 | 15 | CsI |\\n| 1500 | 0 | δ-CsPbI₃ |\\n| 2000 | 97 | γ-CsPbI₃ |\\n| 2000 | 2.7 | CsI |\\n| 2000 | 0 | δ-CsPbI₃ |\\n| 2500 | 98.5 | γ-CsPbI₃ |\\n| 2500 | 0.6 | CsI |\\n| 2500 | 0 | δ-CsPbI₃ |\\n| 3000 | 100 | γ-CsPbI₃ |\\n| 3000 | 0 | CsI |\\n| 3000 | 0 | δ-CsPbI₃ |\\n| 3500 | 52 | γ-CsPbI₃ |\\n| 3500 | 0 | CsI |\\n| 3500 | 48 | δ-CsPbI₃ |\\n| 4000 | 0 | γ-CsPbI₃ |\\n| 4000 | 0 | CsI |\\n| 4000 | 100 | δ-CsPbI₃ |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A Phase Transition to the Delta Phase. Continuing to 4000 cycles destroys the useful Gamma phase and converts it into the useless Delta phase.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Because it is electrically insulating. The Delta phase does not conduct charge effectively, leading to high internal resistance and zero power output.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Deposit a CsI film on a substrate via ALD.\\n\\n2. Deposit 2000 cycles of PbI₂ via ALD at 100°C.\\n\\n3. Perform an X-ray diffraction (XRD) scan on the bilayer stack.\\n\\n4. Deconvolute the XRD pattern to identify phases and integrate their peak areas.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The low-temperature ALD route is necessary for temperature-sensitive substrates. Traditional solution processing requires high annealing temperatures to crystallize the perovskite, which would damage the substrate. ALD enables phase formation via interfacial diffusion at much lower temperatures.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_64_fig_6.jpg","caption":"FIG. 6. XRD patterns of ruthenium films grown from $\\mathrm{Ru(thd)}_3$ and $\\mathrm{RuCp}_2$ on iridium at $250^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/64/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/64/fig_6","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"64","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":525,"height":352,"image_format":"jpeg","image_sha256":"d935201cae345ca728fdbc559ac2d1eedfcadc15f095b9385f4a4a34d3b64fca","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":525,"height":352}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows XRD patterns of ruthenium films grown from RuCp2 and Ru(thd)3 on iridium at 250 °C, highlighting the preferred crystal orientations. Films from RuCp2 are slightly (101)-oriented, while films from Ru(thd)3 show a slightly preferred (002) orientation, indicating that the choice of precursor influences the crystallinity of the films.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (°) | Intensity / Peak Assignment |\\n|---|---|\\n| 35 | RuCp₂ (101) |\\n| 37 | Ru (100) |\\n| 39 | Ir (111) |\\n| 41 | Ru (002) |\\n| 43 | Ru (101) |\\n| 45 | Ir (200) |\\n| 47 | Ru (102) |\\n| 50 | Ru(thd)₃ (002) |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The crystal orientation of ruthenium films affects properties such as conductivity, adhesion, and surface reactivity, which are critical for applications in microelectronics and catalysis. By choosing the appropriate precursor, one can control the film’s crystal structure to optimize these properties for specific device performance or chemical applications.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"RuCp2 films are slightly (101)-oriented, while Ru(thd)3 films are slightly (002)-oriented.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The XRD patterns show that films grown from RuCp2 and Ru(thd)3 have different preferred orientations, indicating that the precursor influences the crystal structure during deposition.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ru(thd)₃: Preferred (002) orientation, RuCp₂: Slightly (101) orientation\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_69_FIG8.jpg","caption":"FIG. 8. Comparison between the respective FTIR spectra of the materials with AIO-PO ratios increasing from 1-1 to 1-6.","id":"train/atomic-layer-deposition/experimental-usecase/69/FIG8","sample_id":"atomic-layer-deposition/experimental-usecase/69/FIG8","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/Ruben Blomme et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"69","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":667,"height":670,"image_format":"jpeg","image_sha256":"981b0f726e0e63b1ff222bfa1f94bee410881165a863de55cb3afdb1b3d2ad93","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":658,"height":669}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays absorbance spectra for different samples labeled AIO - PO (1-6), AIO - PO (1-3), and AIO - PO (1-1) across a range of wavenumbers.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Wavenumber (cm⁻¹) |\\n|---|---|\\n| AlO - PO (1-6) | Peaks at 450, 1000, 1150 |\\n| AlO - PO (1-3) | Peaks at 450, 700, 1000, 1150 |\\n| AlO - PO (1-1) | Peaks at 450, 700, 1150 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There are two regions: between 950 and 1300 cm⁻¹, and between 400 and 550 cm⁻¹.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 625 and 900 cm⁻¹.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Three.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 8 shows that increasing the number of PO cycles leads to a pronounced increase in the intensity of bands associated with P–O interactions, most notably the peaks around 1000 and 1200 cm⁻¹, which are attributed to P–O–P bonding. Simultaneously, the intensity of bands related to Al–O and Al–O–P bonds decreases, reflecting the lower relative aluminum content. Together, these spectral changes indicate a transition from a P-doped aluminum oxide toward an ortho- or polyphosphate material.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_69_FIG9_a.jpg","caption":"FIG. 9. XPS spectra for the materials grown with a different supercycle ratio measured at the surface of the sample. Binding energy calibration was performed on the basis of the C—C/C—H component of the C 1s peak.","id":"train/atomic-layer-deposition/experimental-usecase/69/FIG9_a","sample_id":"atomic-layer-deposition/experimental-usecase/69/FIG9_a","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG9_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG9_a.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/Ruben Blomme et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"69","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":405,"height":488,"image_format":"jpeg","image_sha256":"c71ec6f325274cfb4cdfcf0dd5c717516da90880e7818970cc45303251619c10","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":398,"height":481}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the XPS spectra of three samples (AlO - PO (1-1), AlO - PO (1-3), AlO - PO (1-6)) for the Al 2p region.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Binding Energy (eV) |\\n|---|---|\\n| AlO - PO (1-6) | Peak at 76 |\\n| AlO - PO (1-3) | Peak at 75 |\\n| AlO - PO (1-1) | Peak at 74 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Al 2p peak shifts slightly toward higher binding energies, from about 74.9 to 75.5 eV, which is consistent with an increasing phosphorus content in the material.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"With more PO cycles, the Al 2p peak intensity decreases while the P 2p and O 1s intensities increase, reflecting a transition toward a more phosphate-like material.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The O 1s peak shows increased broadening due to the growth of a higher-binding-energy shoulder attributed to bridging oxygen (P–O–P), indicating phosphate formation.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The P 2p envelope peak shifts toward higher binding energies as the phosphorus content increases, a behavior associated with a higher fraction of P=O bonding.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_12.jpg","caption":"Figure 12. Green $\\mathsf{Tb}^{3 + }$ EL emission from different ALD-grown nanolaminatet structures consisting of $\\mathsf{Al}_2\\mathsf{O}_3$ and $\\mathsf{Tb}_2\\mathsf{O}_3$ layers, relevant for use in luminescent displays. Republished with permission from Ref. [299], 2018, Optica publishing group.","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_12","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_12","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"unknown"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":992,"height":456,"image_format":"jpeg","image_sha256":"64f9b7ab57cd456e93cda4d7f5c64f08cce2b9dbefc8672afd209fc106846295","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":4,"width":642,"height":449},{"panel_id":"b","x":651,"y":8,"width":338,"height":445}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_9.jpg","caption":"Figure 9. XRD patterns for various $R$ -based quaternary oxide thin films deposited by ALD: $\\mathrm{La(Ni,Cu)O_3}$ [205] (Reproduced with permission, 2020, Royal Society of Chemistry) (La,Sr)CoO $_3$ .[32] (Reproduced with permission, 2015, Royal Society of Chemistry) (La,Sr)CuO $_3$ .[201] (Reproduced with permission, 2018, Royal Society of Chemistry.) and (La,Sr)MnO $_3$ .[151] (Reproduced with permission, 2008, Elsevier).","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_9","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"spectra chart"},{"panel_id":"c","label":"spectra chart"},{"panel_id":"d","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":997,"height":795,"image_format":"jpeg","image_sha256":"dc85afe42606ea21da8d20ac4423a35ff4fcf4191033d8f264b609f9b7a21297","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":4,"y":385,"width":489,"height":411},{"panel_id":"b","x":502,"y":5,"width":492,"height":375},{"panel_id":"a","x":1,"y":2,"width":486,"height":372},{"panel_id":"d","x":511,"y":385,"width":482,"height":409}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XRD scans (log intensity) of LaNiCuO3 in a narrow 2θ window for different Cu contents, showing how the peak shape changes with composition.\"},{\"panel_id\":\"b\",\"text\":\"XRD pattern of LaSrCoO3 (noted 700 C), showing multiple diffraction peaks across a wide 2θ range.\"},{\"panel_id\":\"c\",\"text\":\"XRD pattern of LaSrCuO3 with labeled reflections, indicating an oriented diffraction signature.\"},{\"panel_id\":\"d\",\"text\":\"XRD patterns of LaSrMnO3 under different substrate and annealing conditions, comparing peak positions and relative intensities.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (°) | 0% Cu (Norm.) | 10% Cu (Norm.) | 20% Cu (Norm.) | 30% Cu (Norm.) | 40+% Cu (Norm.) |\\n|---|---|---|---|---|---|\\n| 46.8 (Shoulder) | 0.65 | 0.45 | 0.30 | 0.15 | 0.05 |\\n| 47.5 (Valley) | 0.40 | 0.35 | 0.30 | 0.20 | 0.10 |\\n| 48.0 (Main Peak) | 1.00 | 1.00 | 1.00 | 1.00 | 1.00 |\\n| 49.0 | 0.10 | 0.10 | 0.10 | 0.10 | 0.10 |\"},{\"panel_id\":\"b\",\"text\":\"| 2θ (°) | Intensity (Norm.) | Feature |\\n|---|---|---|\\n| 23.5 | 0.25 | Minor Peak |\\n| 33.5 | 1.00 | Main Peak |\\n| 41.0 | 0.15 | Minor Peak |\\n| 47.8 | 0.20 | Minor Peak |\\n| 59.5 | 0.15 | Minor Peak |\"},{\"panel_id\":\"c\",\"text\":\"| 2θ (°) | Intensity (Norm.) | Assignment |\\n|---|---|---|\\n| 13.0 | 0.15 | LSCO(002) |\\n| 23.0 | 1.00 | Substrate () |\\n| 25.5 | 0.45 | LSCO(004) |\\n| 41.5 | 0.40 | LSCO(006) |\\n| 47.5 | 1.00 | Substrate (*) |\\n| 55.5 | 0.35 | LSCO(008) |\"},{\"panel_id\":\"d\",\"text\":\"| 2θ (°) | on Si₃N₄ (Green) | +3hr 800°C (Black) | on YSZ (Red) | +3hr 800°C (Blue) |\\n|---|---|---|---|---|\\n| 28.0 | 0.05 | 0.05 | 0.20 | 0.25 |\\n| 33.0 | 1.00 | 0.30 | 0.10 | 0.15 |\\n| 36.5 | 0.20 | 0.80 | 0.85 | 0.90 |\\n| 38.5 | 0.10 | 1.00 | 1.00 | 1.00 |\\n| 43.0 | 0.05 | 0.05 | 0.25 | 0.15 |\\n| 69.0 | 1.00 | 0.25 | 0.20 | 0.10 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It suggests a preferred orientation, consistent with a textured or oriented film rather than a fully random polycrystal.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Heating is commonly used to drive crystallization and phase formation in complex oxides. Post treatment XRD then checks whether the intended crystalline phase forms and whether secondary phases or poor crystallinity remain.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It decreases relative to the sharp peak, and the patterns increasingly converge toward a sharper dominant peak.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Phase purity strongly influences electrical and ionic transport\\n\\nCrystallinity and texture can affect surface reactivity and oxygen exchange\\n\\nSecondary phases can degrade stability and performance\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_9.jpg","caption":"FIG. 9. Normalized pressure of precursors and ligand species at the downstream position of the tubular reactor: (a) Single dose, $t_d = 0.2 \\text{s}$ , $\\beta_1 = 10^{-2}$ and (b) Single dose, $t_d = 0.4 \\text{s}$ , $\\beta_2 = 10^{-3}$ . (b) Microtissue sequence, $\\beta_{1b} = 10^{-2}$ and (d) microdose sequence, $\\beta_{02} = 10^{-3}$ . A high reaction probability leads to a temporal separation between the precursor and ligand peaks. In all cases, the average precursor pressure at the inlet is $p_0 = 50 \\text{mTorr}$ .","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_9","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_9","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":642,"height":1314,"image_format":"jpeg","image_sha256":"9ff0951f2d97c7524bd4946e951c5a0047f6c902239ba6db7e1104176dd47274","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":13,"width":631,"height":316},{"panel_id":"b","x":15,"y":354,"width":626,"height":301},{"panel_id":"c","x":15,"y":677,"width":626,"height":304},{"panel_id":"d","x":10,"y":983,"width":632,"height":331}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A line chart showing the normalized pressure of ligand and precursor species over time after a single dose, t_d = 0.2 s, β_1 = 10^-2.\"},{\"panel_id\":\"b\",\"text\":\"A line chart showing the normalized pressure of ligand and precursor species over time after a single dose, t_d = 0.4 s, β_1 = 10^-3.\"},{\"panel_id\":\"c\",\"text\":\"A line chart showing the normalized pressure of ligand and precursor species over time after microdose sequence, β_01 = 10^-2.\"},{\"panel_id\":\"d\",\"text\":\"A line chart showing the normalized pressure of ligand and precursor species over time after microdose sequence, β_02 = 10^-3.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Norm. pressure (p/p0) Ligand | Norm. pressure (p/p0) Precursor |\\n|---|---|---|\\n| 0.0 | 0.0 | 0.0 |\\n| 0.2 | 0.0 | 0.0 |\\n| 0.4 | 0.4 | 0.0 |\\n| 0.6 | 0.2 | 0.2 |\\n| 0.8 | 0.1 | 0.1 |\\n| 1.0 | 0.0 | 0.0 |\\n| 1.2 | 0.0 | 0.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Norm. pressure (p/p0) Precursor | Norm. pressure (p/p0) Ligand |\\n|---|---|---|\\n| 0.0 | 0.0 | 0.0 |\\n| 0.5 | 0.35 | 0.25 |\\n| 1.0 | 0.75 | 0.1 |\\n| 1.5 | 0.0 | 0.0 |\"},{\"panel_id\":\"c\",\"text\":\"| Time (s) | Norm. pressure (p/p0) Precursor | Norm. pressure (p/p0) Ligand |\\n|---|---|---|\\n| 0.0 | 0.0 | 0.0 |\\n| 1.0 | 0.08 | 0.14 |\\n| 2.0 | 0.02 | 0.02 |\\n| 3.0 | 0.14 | 0.0 |\\n| 4.0 | 0.16 | 0.0 |\\n| 5.0 | 0.0 | 0.0 |\"},{\"panel_id\":\"d\",\"text\":\"| Time (s) | Norm. pressure (p/p0) Precursor | Norm. pressure (p/p0) Ligand |\\n|---|---|---|\\n| 0.0 | 0.0 | 0.0 |\\n| 1.0 | 0.08 | 0.08 |\\n| 2.0 | 0.01 | 0.02 |\\n| 3.0 | 0.05 | 0.02 |\\n| 4.0 | 0.15 | 0.03 |\\n| 5.0 | 0.0 | 0.0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.4 seconds.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"p_0 = 50 mTorr.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.2 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For high reaction probabilities, the precursor reacts rapidly upon entering the reactor, leading to immediate release of reaction by-products and an offset between the by-product signal and the arrival of unreacted precursor. As the reaction probability decreases, this temporal separation diminishes, and precursor and by-product signals increasingly overlap. When a single dose is resolved into a sequence of microdoses, this effect becomes more pronounced: at high reaction probability, early microdoses are dominated by by-product signals followed by an abrupt transition to precursor-dominated signals, whereas at lower reaction probability both signals persist throughout the dosing sequence with a gradual transition.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_12_figure_10.jpg","caption":"Figure 10. Time-dependent distances of all three $\\mathrm{Hf - Cl}$ bonds of the adsorbed metal precursor complex for the last 2 ps of the simulation at 575 K. The first Cl atom dissociates from the complex at 8.4 ps, followed by the second Cl atom at 8.8 ps.","id":"train/atomic-layer-deposition/simulation-usecase/12/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/12/figure_10","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. Mukhopadhyay et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":667,"height":483,"image_format":"jpeg","image_sha256":"95562eb6a52d3d96a393c43e74f27fb076f6c61862521267ff8d9f24d698580e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":3,"width":653,"height":477}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the variation of Hf-CI distance over time in Angstroms.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (ps) | Hf-CI 1 | Hf-CI 2 | Hf-CI 3 |\\n| --- | --- | --- | --- |\\n| 7.6 | 2.5 | 2.5 | 2.8 |\\n| 8.0 | 2.6 | 2.6 | 2.8 |\\n| 8.4 | 2.7 | 2.5 | 3.3 |\\n| 8.8 | 2.5 | 3.4 | 4.9 |\\n| 9.2 | 2.7 | 4.5 | 4.6 |\\n| 9.6 | 2.7 | 5.3 | 4.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately at 8.2 ps.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The distance for two of the three Hf-Cl bonds increases over time, while the distance for the third bond remains almost constant.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 5.3 Å.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Adsorption of the precursor leads to dissociation of additional Cl- ions.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_19_figure_4.jpg","caption":"Figure 4. Differences in oxygen-related gap states by ${ \\bf N } _ { 2 } { \\bf O }$ plasma reactant. Xps O 1s peaks of the (a) $\\mathrm { I n } _ { 2 } \\mathrm { O } _ { 3 } ,$ (b) $\\mathrm { G a } _ { 2 } \\mathrm { O } _ { 3 } ,$ and (c) $_ { \\mathrm { Z n O } }$ films.SE $\\left( \\varepsilon 2 \\right)$ and bandgap (inset) of the (d) $\\mathrm { I n } _ { 2 } \\mathrm { O } _ { 3 } ,$ (e) ${ \\mathrm { G a } } _ { 2 } { \\mathrm { O } } _ { 3 } ,$ and (f) ${ \\mathrm { Z n O } }$ fl ms. Schematic of the band structure of $( \\mathbf { g } )$ $\\mathrm { I n } _ { 2 } \\mathrm { O } _ { 3 } ,$ (h) ${ \\bf G a } _ { 2 } { \\bf O } _ { 3 } ,$ and (i) $\\mathrm { Z n O }$ extracted from SE analysis.","id":"train/atomic-layer-deposition/simulation-usecase/19/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/19/figure_4","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"},{"panel_id":"e","label":"multi spectra chart"},{"panel_id":"f","label":"multi spectra chart"},{"panel_id":"g","label":"band diagram"},{"panel_id":"h","label":"band diagram"},{"panel_id":"i","label":"band diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/Dong-Gyu Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1120,"height":1364,"image_format":"jpeg","image_sha256":"4aff01618a53e4cdc24f539f85f78a0927d3b8b8e2238306369bbed6eea1944b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":11,"y":57,"width":334,"height":379},{"panel_id":"b","x":393,"y":57,"width":332,"height":379},{"panel_id":"c","x":766,"y":58,"width":339,"height":384},{"panel_id":"d","x":29,"y":507,"width":324,"height":385},{"panel_id":"e","x":419,"y":507,"width":305,"height":382},{"panel_id":"f","x":786,"y":508,"width":333,"height":392},{"panel_id":"g","x":78,"y":977,"width":256,"height":387},{"panel_id":"h","x":453,"y":976,"width":256,"height":388},{"panel_id":"i","x":850,"y":977,"width":256,"height":387}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS O 1s spectra of indium oxide showing normalized intensity versus binding energy, resolved into In–OH, oxygen-deficient (O_def), and In–O components, comparing O₂ and N₂O plasma treatments.\"},{\"panel_id\":\"b\",\"text\":\"XPS O 1s spectra of gallium oxide showing Ga–OH, O_def, and Ga–O components, where N₂O plasma reduces the O_def shoulder relative to O₂ treatment.\"},{\"panel_id\":\"c\",\"text\":\"XPS O 1s spectra of zinc oxide showing Zn–OH, O_def, and Zn–O components, also indicating reduced oxygen deficiency after N₂O plasma exposure.\"},{\"panel_id\":\"d\",\"text\":\"Spectroscopic ellipsometry (SE) ε₂ spectra of indium oxide, showing a bandgap narrowing from 3.52 eV (O₂) to 3.44 eV (N₂O).\"},{\"panel_id\":\"e\",\"text\":\"Spectroscopic ellipsometry (SE) ε₂ spectra of gallium oxide, showing a bandgap widening from 4.53 eV (O₂) to 4.62 eV (N₂O).\"},{\"panel_id\":\"f\",\"text\":\"Spectroscopic ellipsometry (SE) ε₂ spectra of zinc oxide, showing an essentially invariant bandgap at ~3.14 eV regardless of plasma treatment.\"},{\"panel_id\":\"g\",\"text\":\"Schematic band structure of In₂O₃ extracted from spectroscopic ellipsometry (SE) analysis.\"},{\"panel_id\":\"h\",\"text\":\"Schematic band structure of Ga₂O₃ extracted from spectroscopic ellipsometry (SE) analysis.\"},{\"panel_id\":\"i\",\"text\":\"Schematic band structure of ZnO extracted from spectroscopic ellipsometry (SE) analysis.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding energy (eV) | Normalized intensity | Indium Oxide| Condition |\\n|--------------------|----------------------|----------------------|------------|\\n| 533 | 0.00 | O₂* 1 s (Ref) | In–OH |\\n| 533 | 0.00 | N₂O* 1 s | In–OH |\\n| 533 | 0.00 | N₂O* 5 s | In–OH |\\n| 532 | 0.11 | O₂* 1 s (Ref) | In–OH |\\n| 532 | 0.11 | N₂O* 1 s | In–OH |\\n| 532 | 0.11 | N₂O* 5 s | In–OH |\\n| 531 | 0.20 | O₂* 1 s (Ref) | O_(def) |\\n| 531 | 0.19 | N₂O* 1 s | O_(def) |\\n| 531 | 0.20 | N₂O* 5 s | O_(def) |\\n| 530 | 0.57 | O₂* 1 s (Ref) | O_(def) |\\n| 530 | 0.57 | N₂O* 1 s | O_(def) |\\n| 530 | 0.57 | N₂O* 5 s | O_(def) |\\n| 529 | — | O₂* 1 s (Ref) | In–O |\\n| 529 | 0.98 | N₂O* 1 s | In–O peak |\\n| 529 | 0.98 | N₂O* 5 s | In–O peak |\\n| 528 | 0.03 | O₂* 1 s (Ref) | In–O |\\n| 528 | 0.03 | N₂O* 1 s | In–O |\\n| 528 | 0.03 | N₂O* 5 s | In–O |\"},{\"panel_id\":\"b\",\"text\":\"| Binding energy (eV) | Normalized intensity | Gallium Oxide | Condition |\\n|--------------------|----------------------|----------------------|-----------------|\\n| 534 | 0.00 | O₂* 1 s (Ref) | Ga–OH |\\n| 534 | 0.01 | N₂O* 1 s | Ga–OH |\\n| 534 | 0.00 | N₂O* 5 s | Ga–OH |\\n| 533 | 0.05 | O₂* 1 s (Ref) | Ga–OH |\\n| 533 | 0.06 | N₂O* 1 s | Ga–OH |\\n| 533 | 0.04 | N₂O* 5 s | Ga–OH |\\n| 532 | 0.30 | O₂* 1 s (Ref) | O_(def) |\\n| 532 | 0.30 | N₂O* 1 s | O_(def) |\\n| 532 | 0.20 | N₂O* 5 s | O_(def) |\\n| 531 | 0.73 | O₂* 1 s (Ref) | Ga–O |\\n| 531 | 0.73 | N₂O* 1 s | Ga–O |\\n| 531 | 0.73 | N₂O* 5 s | Ga–O |\\n| 530 | 0.98 | O₂* 1 s (Ref) | Ga–O peak |\\n| 530 | 0.98 | N₂O* 1 s | Ga–O peak |\\n| 530 | 0.98 | N₂O* 5 s | Ga–O peak |\\n| 529 | 0.06 | O₂* 1 s (Ref) | Ga–O |\\n| 529 | 0.06 | N₂O* 1 s | Ga–O |\\n| 529 | 0.06 | N₂O* 5 s | Ga–O |\\n| 528 | — | O₂* 1 s (Ref) | — |\\n| 528 | — | N₂O* 1 s | — |\\n| 528 | — | N₂O* 5 s | — |\"},{\"panel_id\":\"c\",\"text\":\"| Binding energy (eV) | Normalized intensity | Zinc Oxide| Condition |\\n|--------------------|----------------------|----------------------|------------|\\n| 534 | 0.01 | O₂* 1 s (Ref) | Zn–OH |\\n| 534 | 0.00 | N₂O* 1 s | Zn–OH |\\n| 534 | 0.00 | N₂O* 5 s | Zn–OH |\\n| 533 | 0.05 | O₂* 1 s (Ref) | Zn–OH |\\n| 533 | 0.04 | N₂O* 1 s | Zn–OH |\\n| 533 | 0.04 | N₂O* 5 s | Zn–OH |\\n| 532 | 0.27 | O₂* 1 s (Ref) | O_(def) |\\n| 532 | 0.25 | N₂O* 1 s | O_(def) |\\n| 532 | 0.23 | N₂O* 5 s | O_(def) |\\n| 531 | 0.82 | O₂* 1 s (Ref) | Zn–O |\\n| 531 | 0.82 | N₂O* 1 s | Zn–O |\\n| 531 | 0.82 | N₂O* 5 s | Zn–O |\\n| 530 | 0.99 | O₂* 1 s (Ref) | Zn–O peak |\\n| 530 | 0.99 | N₂O* 1 s | Zn–O peak |\\n| 530 | 0.99 | N₂O* 5 s | Zn–O peak |\\n| 529 | 0.06 | O₂* 1 s (Ref) | Zn–O |\\n| 529 | 0.06 | N₂O* 1 s | Zn–O |\\n| 529 | 0.06 | N₂O* 5 s | Zn–O |\\n| 528 | — | O₂* 1 s (Ref) | Zn–O |\\n| 528 | — | N₂O* 1 s | Zn–O |\\n| 528 | — | N₂O* 5 s | Zn–O |\"},{\"panel_id\":\"d\",\"text\":\"| Photon energy (eV) | Epsilon 2 (a.u.) |\\n|---------------------|-------------------|\\n| 2.4 | 0.0 |\\n| 2.6 | 0.0 |\\n| 2.8 | 0.0 |\\n| 3.0 | 0.0 |\\n| 3.2 | 0.0 |\\n| 3.4 | 0.0 |\"},{\"panel_id\":\"e\",\"text\":\"| Photon energy (eV) | Epsilon 2 (a.u.) |\\n|---------------------|-------------------|\\n| 3.6 | 0.0 |\\n| 3.8 | 0.0 |\\n| 4.0 | 0.0 |\\n| 4.2 | 0.0 |\\n| 4.4 | 0.0 |\"},{\"panel_id\":\"f\",\"text\":\"| Photon energy (eV) | Epsilon 2 (a.u.) |\\n|---------------------|-------------------|\\n| 2.2 | 0.0 |\\n| 2.4 | 0.0 |\\n| 2.6 | 0.0 |\\n| 2.8 | 0.0 |\\n| 3.0 | 0.0 |\\n| 3.2 | 0.0 |\"},{\"panel_id\":\"g\",\"text\":\"| Conduction Band | Valence Band |\\n|------------------|--------------|\\n| Indium oxide N₂O* Gap state increase & Donor-level decrease | Indium oxide N₂O* Gap state increase & Donor-level decrease |\\n| Gallium oxide N₂ | |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Gallium oxide. Panel (e) shows the bandgap widening from 4.53 eV to 4.62 eV, whereas Indium Oxide exhibits bandgap narrowing.\"}]},{\"panel_id\":\"h\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Reduced sub-gap absorption. The absorption tail near the band edge is suppressed and steepened in the N₂O-treated sample, indicating fewer localized defect states within the bandgap.\"}]},{\"panel_id\":\"g\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Passivation. Extended N₂O plasma exposure reduces shallow donor states associated with oxygen vacancies in Indium Oxide, shifting the Fermi level away from the conduction band.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Trap density. Increased gap states act as charge traps that must be filled before channel conduction begins, resulting in a larger sub-threshold swing and slower switching.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_19_figure_5.jpg","caption":"Figure 5. Desorption behaviors of the nitrogen and carbon species in the $\\mathrm { I n } _ { 2 } \\mathrm { O } _ { 3 } ,$ ${ \\mathrm { G a } } _ { 2 } { \\mathrm { O } } _ { 3 } ,$ and $\\mathrm { Z n O }$ fil ms fabricated with $\\mathrm { O } _ { 2 }$ or $\\mathrm { N } _ { 2 } \\mathrm { O }$ plasma reactant. TDS spectra of the (a) $\\mathrm { I n } _ { 2 } \\mathrm { O } _ { 3 } ,$ (b) ${ \\mathrm { G a } } _ { 2 } { \\mathrm { O } } _ { 3 } ,$ and(c) $_ \\mathrm { Z n O }$ flms fabricated by using an $\\mathrm { O } _ { 2 }$ plasma exposure time of 1 s and $\\mathrm { N } _ { 2 } \\mathrm { O }$ plasma times of 1 and 5s.","id":"train/atomic-layer-deposition/simulation-usecase/19/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/19/figure_5","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/Dong-Gyu Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1109,"height":1475,"image_format":"jpeg","image_sha256":"8dbc95e3e177663f40c566942738a6cdb8b7d17fc37d9c699a05b9322dae1f75","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":33,"y":45,"width":389,"height":420},{"panel_id":"b","x":432,"y":45,"width":676,"height":429},{"panel_id":"c","x":36,"y":534,"width":388,"height":430},{"panel_id":"d","x":435,"y":535,"width":673,"height":438},{"panel_id":"e","x":36,"y":1031,"width":389,"height":421},{"panel_id":"f","x":440,"y":1030,"width":668,"height":428}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure tracks the desorption of nitrogen (N, m/z = 14) and carbon-related impurities (CO, CO₂) from indium, gallium, and zinc oxide films during heating. For indium oxide, the N₂O plasma treatment (blue line) significantly suppresses CO and CO₂ desorption in the 350–500 °C range (yellow boxes) compared to the O₂ reference (black line), demonstrating more effective removal of carbon-based ligand residues.\"},{\"panel_id\":\"b\",\"text\":\"Gallium oxide uniquely exhibits a high-temperature nitrogen release (yellow box, inset) after N₂O treatment, confirming stable nitrogen incorporation into the Ga₂O₃ lattice and supporting the improved stability observed in prior electrical measurements.\"},{\"panel_id\":\"c\",\"text\":\"Zinc oxide temperature-dependent desorption of species, measured using TDS at m/z = 14, 28, and 44.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | TDS intensity | Condition | Indium Oxide Species (m/z) |\\n|-----------------:|--------------:|-----------|---------------|\\n| 150 | 10⁻¹² | O₂* 1 s | N (14) |\\n| 150 | 10⁻¹² | N₂O* 1 s | N (14) |\\n| 150 | 10⁻¹² | N₂O* 5 s | N (14) |\\n| 150 | 10⁻¹² | O₂* 1 s | CO (28) |\\n| 150 | 10⁻¹² | N₂O* 1 s | CO (28) |\\n| 150 | 10⁻¹² | N₂O* 5 s | CO (28) |\\n| 150 | 10⁻¹² | O₂* 1 s | CO₂ (44) |\\n| 150 | 10⁻¹² | N₂O* 1 s | CO₂ (44) |\\n| 150 | 10⁻¹² | N₂O* 5 s | CO₂ (44) |\\n| 300 | 10⁻¹¹ | O₂* 1 s | N (14) |\\n| 300 | 10⁻¹¹ | N₂O* 1 s | N (14) |\\n| 300 | 10⁻¹¹ | N₂O* 5 s | N (14) |\\n| 300 | 10⁻¹¹ | O₂* 1 s | CO (28) |\\n| 300 | 10⁻¹¹ | N₂O* 1 s | CO (28) |\\n| 300 | 10⁻¹¹ | N₂O* 5 s | CO (28) |\\n| 300 | 10⁻¹¹ | O₂* 1 s | CO₂ (44) |\\n| 300 | 10⁻¹¹ | N₂O* 1 s | CO₂ (44) |\\n| 300 | 10⁻¹¹ | N₂O* 5 s | CO₂ (44) |\\n| 450 | 10⁻¹² | O₂* 1 s | N (14) |\\n| 450 | 10⁻¹² | N₂O* 1 s | N (14) |\\n| 450 | 10⁻¹² | N₂O* 5 s | N (14) |\\n| 450 | 10⁻¹⁰ | O₂* 1 s | CO (28) |\\n| 450 | 10⁻¹⁰ | N₂O* 1 s | CO (28) |\\n| 450 | 10⁻¹¹ | N₂O* 5 s | CO (28) |\\n| 450 | 10⁻¹⁰ | O₂* 1 s | CO₂ (44) |\\n| 450 | 10⁻¹⁰ | N₂O* 1 s | CO₂ (44) |\\n| 450 | 10⁻¹¹ | N₂O* 5 s | CO₂ (44) |\\n| 600 | 10⁻¹² | O₂* 1 s | N (14) |\\n| 600 | 10⁻¹² | N₂O* 1 s | N (14) |\\n| 600 | 10⁻¹² | N₂O* 5 s | N (14) |\\n| 600 | 10⁻¹¹ | O₂* 1 s | CO (28) |\\n| 600 | 10⁻¹¹ | N₂O* 1 s | CO (28) |\\n| 600 | 10⁻¹¹ | N₂O* 5 s | CO (28) |\\n| 600 | 10⁻¹¹ | O₂* 1 s | CO₂ (44) |\\n| 600 | 10⁻¹¹ | N₂O* 1 s | CO₂ (44) |\\n| 600 | 10⁻¹¹ | N₂O* 5 s | CO₂ (44) |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | TDS intensity | Condition | Gallium Oxide Species (m/z) |\\n|-----------------:|--------------:|-----------|---------------|\\n| 150 | 10⁻¹² | O₂* 1 s | N (14) |\\n| 150 | 10⁻¹² | N₂O* 1 s | N (14) |\\n| 150 | 10⁻¹² | N₂O* 5 s | N (14) |\\n| 150 | 10⁻¹² | O₂* 1 s | CO (28) |\\n| 150 | 10⁻¹² | N₂O* 1 s | CO (28) |\\n| 150 | 10⁻¹² | N₂O* 5 s | CO (28) |\\n| 150 | 10⁻¹² | O₂* 1 s | CO₂ (44) |\\n| 150 | 10⁻¹² | N₂O* 1 s | CO₂ (44) |\\n| 150 | 10⁻¹² | N₂O* 5 s | CO₂ (44) |\\n| 300 | 10⁻¹¹ | O₂* 1 s | N (14) |\\n| 300 | 10⁻¹¹ | N₂O* 1 s | N (14) |\\n| 300 | 10⁻¹¹ | N₂O* 5 s | N (14) |\\n| 300 | 10⁻¹¹ | O₂* 1 s | CO (28) |\\n| 300 | 10⁻¹¹ | N₂O* 1 s | CO (28) |\\n| 300 | 10⁻¹¹ | N₂O* 5 s | CO (28) |\\n| 300 | 10⁻¹¹ | O₂* 1 s | CO₂ (44) |\\n| 300 | 10⁻¹¹ | N₂O* 1 s | CO₂ (44) |\\n| 300 | 10⁻¹¹ | N₂O* 5 s | CO₂ (44) |\\n| 450 | 10⁻¹² | O₂* 1 s | N (14) |\\n| 450 | 10⁻¹² | N₂O* 1 s | N (14) |\\n| 450 | 10⁻¹² | N₂O* 5 s | N (14) |\\n| 450 | 10⁻¹⁰ | O₂* 1 s | CO (28) |\\n| 450 | 10⁻¹⁰ | N₂O* 1 s | CO (28) |\\n| 450 | 10⁻¹¹ | N₂O* 5 s | CO (28) |\\n| 450 | 10⁻¹⁰ | O₂* 1 s | CO₂ (44) |\\n| 450 | 10⁻¹¹ | N₂O* 1 s | CO₂ (44) |\\n| 450 | 10⁻¹¹ | N₂O* 5 s | CO₂ (44) |\\n| 600 | 10⁻¹² | O₂* 1 s | N (14) |\\n| 600 | 10⁻¹² | N₂O* 1 s | N (14) |\\n| 600 | 10⁻¹² | N₂O* 5 s | N (14) |\\n| 600 | 10⁻¹⁰ | O₂* 1 s | CO (28) |\\n| 600 | 10⁻¹⁰ | N₂O* 1 s | CO (28) |\\n| 600 | 10⁻¹¹ | N₂O* 5 s | CO (28) |\\n| 600 | 10⁻¹¹ | O₂* 1 s | CO₂ (44) |\\n| 600 | 10⁻¹¹ | N₂O* 1 s | CO₂ (44) |\\n| 600 | 10⁻¹¹ | N₂O* 5 s | CO₂ (44) |\"},{\"panel_id\":\"c\",\"text\":\"| Temperature (°C) | TDS intensity | Condition | Zinc Oxide Species (m/z) |\\n|-----------------:|--------------:|-----------|---------------|\\n| 150 | 10⁻¹² | O₂* 1 s | N (14) |\\n| 150 | 10⁻¹² | N₂O* 1 s | N (14) |\\n| 150 | 10⁻¹² | N₂O* 5 s | N (14) |\\n| 150 | 10⁻¹² | O₂* 1 s | CO (28) |\\n| 150 | 10⁻¹² | N₂O* 1 s | CO (28) |\\n| 150 | 10⁻¹² | N₂O* 5 s | CO (28) |\\n| 150 | 10⁻¹² | O₂* 1 s | CO₂ (44) |\\n| 150 | 10⁻¹² | N₂O* 1 s | CO₂ (44) |\\n| 150 | 10⁻¹² | N₂O* 5 s | CO₂ (44) |\\n| 300 | 10⁻¹¹ | O₂* 1 s | N (14) |\\n| 300 | 10⁻¹¹ | N₂O* 1 s | N (14) |\\n| 300 | 10⁻¹¹ | N₂O* 5 s | N (14) |\\n| 300 | 10⁻¹¹ | O₂* 1 s | CO (28) |\\n| 300 | 10⁻¹¹ | N₂O* 1 s | CO (28) |\\n| 300 | 10⁻¹¹ | N₂O* 5 s | CO (28) |\\n| 300 | 10⁻¹¹ | O₂* 1 s | CO₂ (44) |\\n| 300 | 10⁻¹¹ | N₂O* 1 s | CO₂ (44) |\\n| 300 | 10⁻¹¹ | N₂O* 5 s | CO₂ (44) |\\n| 450 | 10⁻¹² | O₂* 1 s | N (14) |\\n| 450 | 10⁻¹² | N₂O* 1 s | N (14) |\\n| 450 | 10⁻¹² | N₂O* 5 s | N (14) |\\n| 450 | 10⁻¹⁰ | O₂* 1 s | CO (28) |\\n| 450 | 10⁻¹⁰ | N₂O* 1 s | CO (28) |\\n| 450 | 10⁻¹⁰ | N₂O* 5 s | CO (28) |\\n| 450 | 10⁻¹⁰ | O₂* 1 s | CO₂ (44) |\\n| 450 | 10⁻¹⁰ | N₂O* 1 s | CO₂ (44) |\\n| 450 | 10⁻¹⁰ | N₂O* 5 s | CO₂ (44) |\\n| 600 | 10⁻¹² | O₂* 1 s | N (14) |\\n| 600 | 10⁻¹² | N₂O* 1 s | N (14) |\\n| 600 | 10⁻¹² | N₂O* 5 s | N (14) |\\n| 600 | 10⁻¹¹ | O₂* 1 s | CO (28) |\\n| 600 | 10⁻¹¹ | N₂O* 1 s | CO (28) |\\n| 600 | 10⁻¹¹ | N₂O* 5 s | CO (28) |\\n| 600 | 10⁻¹¹ | O₂* 1 s | CO₂ (44) |\\n| 600 | 10⁻¹¹ | N₂O* 1 s | CO₂ (44) |\\n| 600 | 10⁻¹¹ | N₂O* 5 s | CO₂ (44) |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The N₂O-treated samples show reduced carbon-related desorption peaks compared to the O₂ reference, indicating improved film purity and reduced electron scattering centers.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Nitrogen incorporation. The increased nitrogen desorption confirms chemical incorporation of nitrogen into the Gallium Oxide lattice.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Approximately 400–450 °C. The dominant desorption peak is centered in this temperature range.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Significant reduction. The Blue line is substantially lower, indicating that extended N₂O plasma treatment effectively removes carbon monoxide–related impurities.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_23_fig_8.jpg","caption":"Fig. 8 Fitting curves of the linear CO adsorption spectra on $\\mathrm{AlO}_x$ -coated Pt nanoparticles after (a) 0, (b) 1, (c) 3 and (d) 5 ALD cycles.","id":"train/atomic-layer-deposition/simulation-usecase/23/fig_8","sample_id":"atomic-layer-deposition/simulation-usecase/23/fig_8","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/Jiaqiang Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":653,"height":461,"image_format":"jpeg","image_sha256":"16c7aba8b8da5cac663e7db78e277d675b3e2c9991364a2810ed0443f90b8569","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":358,"height":218},{"panel_id":"b","x":357,"y":8,"width":294,"height":211},{"panel_id":"c","x":1,"y":218,"width":358,"height":242},{"panel_id":"d","x":357,"y":217,"width":294,"height":242}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_13_figure_10.jpg","caption":"Figure 10. XPS fitting results of the Al $2p$ , Ga $3d$ , and N $1s$ peaks for the AlGaN samples fabricated using the digital etching (a–c) and ALE (d–f) processes.","id":"train/atomic-layer-etching/experimental-usecase/13/figure_10","sample_id":"atomic-layer-etching/experimental-usecase/13/figure_10","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"},{"panel_id":"e","label":"multi spectra chart"},{"panel_id":"f","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/Low-Damage and Self-Limiting (Al)GaN Etching Process.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1050,"height":578,"image_format":"jpeg","image_sha256":"5213a8fe3222dc4a69acb1b647fa9e12979601b88e80b4a86339ae0ba07e827c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":10,"width":314,"height":250},{"panel_id":"b","x":371,"y":10,"width":312,"height":250},{"panel_id":"c","x":730,"y":11,"width":320,"height":250},{"panel_id":"d","x":9,"y":326,"width":317,"height":252},{"panel_id":"e","x":370,"y":326,"width":313,"height":252},{"panel_id":"f","x":730,"y":325,"width":320,"height":253}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows Al 2p core-level spectra with peaks labeled as Al-N and Al-O.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows Ga 3d core-level spectra with peaks labeled as Ga-N and Ga-O.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows N 1s core-level spectra with peaks labeled as N-Ga, N-Al, and Ga Auger.\"},{\"panel_id\":\"d\",\"text\":\"The figure shows Al 2p core-level spectra with peaks labeled as Al-N and Al-O.\"},{\"panel_id\":\"e\",\"text\":\"The figure shows Ga 3d core-level spectra with peaks labeled as Ga-N and Ga-O.\"},{\"panel_id\":\"f\",\"text\":\"The figure shows N 1s core-level spectra with peaks labeled as N-Ga, N-Al, and Ga Auger.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Component | Binding Energy (eV) |\\n|---|---|\\n| Al-N | Peak at 73.5 |\\n| Al-O | Peak at 74 |\"},{\"panel_id\":\"b\",\"text\":\"| Component | Binding Energy (eV) |\\n|---|---|\\n| Ga-N | Peak at 19.5 |\\n| Ga-O | Peak at 20 |\"},{\"panel_id\":\"c\",\"text\":\"| Component | Binding Energy (eV) |\\n|---|---|\\n| Ga Auger | Peak at 394 |\\n| N-Al | Peak at 395 |\\n| N-Ga | Peak at 396.5 |\"},{\"panel_id\":\"d\",\"text\":\"| Component | Binding Energy (eV) |\\n|---|---|\\n| Al-N | Peak at 73.5 |\\n| Al-O | Peaks at 74, 75 |\"},{\"panel_id\":\"e\",\"text\":\"| Component | Binding Energy (eV) |\\n|---|---|\\n| Ga-N | Peak at 19.5 |\\n| Ga-O | Peak at 20 |\"},{\"panel_id\":\"f\",\"text\":\"| Component | Binding Energy (eV) |\\n|---|---|\\n| Ga Auger | Peak at 394 |\\n| N-Al | Peak at 395 |\\n| N-Ga | Peak at 396.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Al 2p, Ga 3d, and N 1s regions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The digital etching method showed larger Al-O and Ga-O peak intensities.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It indicates that digital etching is less effective at removing surface oxides compared to ALE.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ratio was 0.90 for the ALE sample and 0.82 for the digitally etched sample, indicating fewer nitrogen vacancies for the ALE-treated surface.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_16_fig_3.jpg","caption":"Fig. 3. XPS a) F(1s) and b) C(1s) profiles for 1) for film $(11\\mathrm{nm})$ deposited in $\\nu_{\\mathrm{CF_4}} = 3.3\\%$ (solid symbols) and 2) for film $(22\\mathrm{nm})$ deposited in $\\nu_{\\mathrm{CF4}} = 6.6\\%$ (open symbols), while Ar fraction is $83.3\\%$","id":"train/atomic-layer-etching/experimental-usecase/16/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/16/fig_3","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/Selective atomic layer etching of Al2O3, AlNx and HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":947,"height":394,"image_format":"jpeg","image_sha256":"78e05ff29c4651cf9029f40dcedff6a236a34c7ca955eb3bf205e577edda75f3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":36,"width":491,"height":358},{"panel_id":"b","x":525,"y":37,"width":419,"height":351}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The F 1s XPS spectra show a single dominant peak centered near 690 eV for both CF₄ fractions. Increasing ν_CF₄ from 3.3% to 6.6% leads to a strong increase in peak intensity without a measurable chemical shift, indicating a higher fluorine surface concentration rather than a change in bonding state.\"},{\"panel_id\":\"b\",\"text\":\"The C 1s spectra reveal multiple fluorinated carbon components, including C–CFₙ, C–F, C–F₂, and C–F₃. At higher CF₄ fraction, the relative contribution of fluorinated species (C–Fₓ) increases while the hydrocarbon backbone contribution decreases. The shift of intensity toward higher binding energies reflects increased carbon–fluorine coordination.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Intensity (v_CF4 = 3.3%) (counts/s) | Intensity (v_CF4 = 6.6%) (counts/s) |\\n|---|---|---|\\n| 698.0 | ~400 | ~400 |\\n| 696.0 | ~400 | ~400 |\\n| 694.0 | ~400 | ~400 |\\n| 692.0 | ~420 | ~420 |\\n| 690.2 | ~3750 | ~6600 |\\n| 688.0 | ~500 | ~1200 |\\n| 686.0 | ~400 | ~300 |\\n| 684.0 | ~400 | ~300 |\\n| 682.0 | ~400 | ~300 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Intensity (v_CF4 = 3.3%) (counts/s) | Intensity (v_CF4 = 6.6%) (counts/s) | Component |\\n|---|---|---|---|\\n| 285.0 | ~1500 | ~200 | C–CF_n |\\n| 290.0 | ~450 | ~540 | C–F |\\n| 292.5 | ~300 | ~540 | C–F2 |\\n| 294.5 | ~400 | ~300 | C–F3 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The formation of multiple peaks in the spectrum shows the formation of several species on the film.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"6.6% of CF4\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At higher CF₄ fractions, the F(1s) spectra exhibit a noticeable increase in peak intensity while maintaining a stable binding energy, indicating enhanced fluorine incorporation without charging effects. In the C(1s) spectra, higher CF₄ levels result in stronger CF₂ and CF₃ peaks, reflecting increased fluorination of the polymer backbone. In contrast, films deposited at lower CF₄ fractions show weaker fluorinated carbon components, highlighting a clear compositional trend driven by plasma chemistry.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The C-CFn component, with a binding energy of ~285 eV\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"C-F3, C-F2, C-F, C-CFn\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"6.6%\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"290.1 eV, 287.9 eV\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"They attributed this peak to the presence of a hydrocarbon group (i.e. contamination). This peak could also correspond to another condition of the C-F bond, possibly causing the calculated fluorine concentration to be underestimated. However, this possible underestimation does not affect the qualitative result that the concentration of fluorine in the film increases with the concentration of CF4 in the plasma.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film deposited in higher CF4 fraction plasma 6.6% shows more pronounced C-Fx peaks corresponding to higher concentration of C-bonded fluorine in film; i.e., more CF, CF2, CF3 compared to films with 3.3% CF4 concentration.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"XPS peak\\n- 285.5 eV — C–CFₙ bond\\n- 290.2 eV — CF\\n- 292.4 eV — CF₂ \\n- 294.6 eV — CF₃\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The C(1s) spectra reveal that higher CF₄ fractions produce more heavily fluorinated polymer films. At 3.3% CF₄, the film shows predominantly lower-fluorination states (C-CFn peak around 285 eV) with modest C-F, C-F₂, and C-F₃ contributions. At 6.6% CF₄, the C-Fx peaks (C-F, C-F₂, C-F₃) become much more pronounced, indicating higher concentrations of carbon atoms bonded to multiple fluorine atoms.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"C-CFn (~285 eV),C-F (~290 eV),C-F₂ (~292 eV),C-F₃ (~295 eV).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As carbon bonds to an increasing number of fluorine atoms, electron density around carbon decreases due to fluorine’s strong electronegativity. This causes a systematic shift of C 1s components to higher binding energies, with C–F₃ appearing at the highest energies.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The C–F₂ and C–F₃ species show the clearest increase, with C–F₃ becoming a distinct peak.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An increase in CF4 concentration seems to induce a shift from more CF3 and C-CFx bonds towards more CF and CF2 bonds.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This conclusion can not be drawn from the bare carbon spectrum. Calculations of atomic composition require more material specific parameters than the pure XPS spectrum.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 689.8–690.2 eV.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the concentration of CF4 decreases, the main peak of F, shift towards lower binding energy values.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the composition of CF4 increases, more F and C atoms are deposited on the film. Therefore, there are also greater amounts of species, such as C-F3, C-F2, C-F, and C-CFn.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Increased F(1s) peak intensity at higher CF₄ fraction, Stronger CF₂ and CF₃ components in the C(1s) spectra, Appearance of an additional C–F or hydrocarbon-related peak near 288 eV, Consistent peak positions indicating minimal charging effects\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The peaks have roughly the same binding energy howver the 6.6% CF4 condition gives a much stronger intensity. This indicates a larger presence of F on the surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The peak at higher binding energy (690.2 eV, 3.3% CF4).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In XPS, stronger positive charging of a sample during photoemission reduces the kinetic energy of the electrons escaping the surface, making the peaks shift to higher binding energies. On the spectrum, this corresponds to a shift slightly to the left. The film deposited at 3.3% CF4 shows this leftward energy shift, indicating it was likely more positively charged during the measurement.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the percentage of CF4 in the plasma was increased from 3.3% to 6.6%, the F/C ratio increased from 0.5 to 1.6.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"11 nm (CF4 fraction = 3.3%) and 22 nm (CF4 fraction = 6.6%)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"CF3 at 294.6 eV, CF2 at 292.4 eV, CF at 290.2 eV\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The peak maximum occurs between 689.5 -690.5 eV for both conditions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the films with more CF4 concentration (6.6%) show a higher peak intensity of 6500 counts than the one with lower CF4 concentration of 3.3% showing 4000 counts.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The fraction of CF₄ (νCF₄) in the deposition process was changed, from 3.3% to 6.6%.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the CF₄ fraction from 3.3% to 6.6% leads to a film with a significantly different chemical structure. The XPS data shows a substantial increase in fluorine incorporation within the film, indicating a more fluorinated carbon network. This change in chemical composition is directly responsible for the altered C(1s) bonding profile and is correlated with the ability to deposit a much thicker film.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 689-690 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. \\nEvidence: in panel (a), the peak for v_CF4 = 6.6% shows higher intensity than for v_CF4 = 3.3%.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ν_CF₄ = 6.6%.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Based on subfigure a, it is shown that an increase in the CF4 concentration results in more fluorine in the film.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, usually a shift in peak position indicates different stoichiometries. This is proven by the spectrum from carbon where the change in stoichiometry also introduces different peaks.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_10.jpg","caption":"Figure 10. FTIR spectra recorded at $150^{\\circ}\\mathrm{C}$ after every 5 cycles of $\\mathrm{VO}_2$ ALD for 35 cycles using TEMAV and $\\mathrm{H}_2\\mathrm{O}$ as the reactants at $150^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/17/figure_10","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_10","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":672,"height":616,"image_format":"jpeg","image_sha256":"2e0070acc186d5a1bd112108a971a480370c2c1f103a9fc76bc7ca0c3401dac8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":672,"height":616}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows a series of FTIR absorbance spectra collected during the atomic layer deposition (ALD) of VO₂ at 150 °C. The spectra are plotted as absorbance vs. wavenumber (cm⁻¹) and correspond to increasing ALD cycle numbers, ranging from 5 to 35. Two primary peaks are observed: one near 1010 cm⁻¹ corresponding to the V=O stretching mode, and another near 700–600 cm⁻¹ associated with the V–O bond in VO₂. The increasing intensity of both peaks with cycle number indicates progressive film growth and the formation of VO₂ bonds over successive ALD cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance (Cycle 5) | Absorbance (Cycle 10) | Absorbance (Cycle 15) | Absorbance (Cycle 20) | Absorbance (Cycle 25) | Absorbance (Cycle 30) | Absorbance (Cycle 35) |\\n|------------------|----------------------|------------------------|------------------------|------------------------|------------------------|------------------------|------------------------|\\n| 1400 | 0.01 | 0.015 | 0.02 | 0.025 | 0.03 | 0.035 | 0.04 |\\n| 1000 | 0.05 | 0.08 | 0.11 | 0.14 | 0.17 | 0.20 | 0.23 |\\n| 750 | 0.10 | 0.13 | 0.16 | 0.19 | 0.22 | 0.25 | 0.28 |\\n| 600 | 0.15 | 0.18 | 0.21 | 0.24 | 0.27 | 0.30 | 0.33 |\\n| 450 | 0.05 | 0.06 | 0.07 | 0.08 | 0.09 | 0.10 | 0.11 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 1010 cm⁻¹.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"V=O stretching mode , V–O stretching mode\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The progressive increase in absorbance at the V=O and V–O vibrational bands as the number of ALD cycles increases suggests a corresponding growth in the VO₂ thin film. The presence and sharpening of these characteristic peaks confirm the incorporation of vanadium and oxygen in the desired bonding environments, validating the chemical identity of the film. Furthermore, the consistency in peak position and smooth growth in intensity indicates uniform deposition behavior at 150 °C, reinforcing the layer-by-layer nature of the ALD process.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_15.jpg","caption":"Figure 15. FTIR spectra recorded at $200^{\\circ}\\mathrm{C}$ during fluorination of the $\\mathrm{VO}_2$ ALD film at $200^{\\circ}\\mathrm{C}$ . (a) Difference spectra for $10 \\mathrm{SF}_4$ exposures on the $\\mathrm{VO}_2$ ALD film. (b) Difference spectra for $10 \\mathrm{HF}$ exposures on the $\\mathrm{VO}_2$ ALD film.","id":"train/atomic-layer-etching/experimental-usecase/17/figure_15","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_15","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":656,"height":803,"image_format":"jpeg","image_sha256":"255cb18e8453a770e27192ea12f0652342b6bbf6dde4b586964b06e3bbbdda21","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":1,"width":646,"height":343},{"panel_id":"b","x":0,"y":236,"width":655,"height":563}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure compares the infrared absorbance spectra of VO₂ films fluorinated using SF₄ and HF gases at 200 °C. Each trace represents the progression of exposure from 1 to 10 cycles, showing how the spectral features evolve with increasing fluorination. The SF₄ spectra (in blue) exhibit a progressive increase in the V–F absorbance region (500–800 cm⁻¹) and attenuation in the V=O region (~1000 cm⁻¹), indicating successful replacement of oxygen with fluorine. The HF spectra (in red) also show similar trends but with reduced intensity changes, suggesting lower fluorine incorporation compared to SF₄.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance (SF₄) |\\n|------------------|------------------|\\n| 1000 | -0.1 |\\n| 800 | 0.0 |\\n| 600 | 0.05 |\\n| 400 | 0.08 |\\n| 40 | 0.1 |\"},{\"panel_id\":\"b\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance (HF) |\\n|------------------|-----------------|\\n| 1000 | -0.3 |\\n| 800 | -0.25 |\\n| 600 | -0.2 |\\n| 400 | -0.1 |\\n| 40 | -0.05 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SF₄.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Over 10 exposure cycles, SF₄ treatment leads to a more pronounced increase in absorbance in the V–F vibrational region and a significant reduction in the V=O peak near 1000 cm⁻¹. This suggests greater fluorine incorporation and more extensive modification of the VO₂ lattice. In contrast, HF exposure results in less dramatic changes in the same regions, indicating a lower degree of fluorination under identical conditions. The comparison reflects SF₄'s higher reactivity or surface accessibility relative to HF.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"V=O stretch (~1000 cm⁻¹), V–F stretch (~500–800 cm⁻¹), V–O region (600–800 cm⁻¹)\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_2_figure_12.jpg","caption":"Figure 12. Evolution of plasma properties from cycle to cycle as measured using a Langmuir probe.10 The cycle-to-cycle changes increase with $\\mathrm{C_4F_8}$ pulse length due to more residual FC in the system. This is explained by more deposition of FC on the walls of the apparatus, contributing residual FC during Ar cycles when idealy FC is only prent on the active surface of the substrate. The overal behavior is consistent with the impact of continuous precursor addition on plasma electrical properties.","id":"train/atomic-layer-etching/experimental-usecase/2/figure_12","sample_id":"atomic-layer-etching/experimental-usecase/2/figure_12","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/Atomic Layer Etching at the Tipping Point An Overview.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1139,"height":403,"image_format":"jpeg","image_sha256":"bbb8bb81b47965a77945b29a2678e9816a50c5522d6c5c4cae75006d3cd606db","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":13,"width":360,"height":390},{"panel_id":"b","x":374,"y":11,"width":397,"height":392},{"panel_id":"c","x":784,"y":11,"width":355,"height":392}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows cycle-to-cycle evolution of plasma potential during C₄F₈ pulsing, where longer pulse duration (5.0 s) induces larger and more persistent potential changes than the shorter pulse (1.5 s).\"},{\"panel_id\":\"b\",\"text\":\"presents the electron density response, indicating higher and more slowly relaxing density for longer C₄F₈ exposure due to increased residual fluorocarbon species.\"},{\"panel_id\":\"c\",\"text\":\"shows changes in electron temperature, which remain relatively low but exhibit stronger perturbations for longer pulse duration, reflecting altered plasma conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Vp (V) — 1.5 s | Vp (V) — 5.0 s |\\n|----------|----------------|----------------|\\n| 0 | 0.65 | 0.50 |\\n| 5 | 0.10 | 0.85 |\\n| 10 | -0.05 | 0.55 |\\n| 20 | -0.10 | 0.45 |\\n| 40 | -0.10 | 0.25 |\\n| 60 | -0.10 | 0.05 |\\n| 80 | 0.00 | -0.10 |\\n| 95 | 0.55 | 0.40 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Ne — 1.5 s | Ne — 5.0 s |\\n|----------|------------|------------|\\n| 0 | -2.0e10 | -3.0e10 |\\n| 5 | -5.0e9 | -1.5e10 |\\n| 10 | -2.0e9 | -1.0e10 |\\n| 20 | -1.0e9 | -6.0e9 |\\n| 40 | -5.0e8 | -3.0e9 |\\n| 60 | -2.0e8 | -2.0e9 |\\n| 80 | -1.0e8 | -1.0e9 |\\n| 95 | -2.0e10 | -3.5e10 |\"},{\"panel_id\":\"c\",\"text\":\"| Time (s) | Te (eV) — 1.5 s | Te (eV) — 5.0 s |\\n|----------|------------------|------------------|\\n| 0 | 0.13 | 0.12 |\\n| 5 | 0.01 | 0.00 |\\n| 10 | 0.00 | -0.01 |\\n| 20 | 0.01 | 0.00 |\\n| 40 | 0.01 | -0.01 |\\n| 60 | 0.02 | 0.00 |\\n| 80 | 0.03 | 0.00 |\\n| 95 | 0.12 | 0.11 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Cycle-to-cycle plasma evolution directly impacts etch uniformity, selectivity, and self-limitation in ALE processes. Increased residual fluorocarbon species from longer precursor pulses alter plasma electrical properties, which can reduce process controllability and degrade etching precision. Understanding these effects is critical for optimizing pulse timing and maintaining stable ALE operation.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 5.0 s pulse produces larger and more persistent changes in plasma potential, electron density, and electron temperature than the 1.5 s pulse.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Plasma potential, Electron density, Electron temperature\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_2_figure_8.jpg","caption":"Figure 8. Real time ellipsometry trajectory showing key differences in surface processes between ALE and steady-state etching during continuous plasma etching of a $\\mathrm{SiO}_2$ -Si- $\\mathrm{SiO_2}$ multi-layer stack.100 Each dashed line marks $10\\mathrm{\\AA}$ of FC film.","id":"train/atomic-layer-etching/experimental-usecase/2/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/2/figure_8","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/Atomic Layer Etching at the Tipping Point An Overview.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":508,"height":511,"image_format":"jpeg","image_sha256":"7009c07e2527638292f95e68574d6992b037ab7b8d497aa23f942c233f6a0c23","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":508,"height":511}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents real-time ellipsometry trajectories (Δ vs Ψ) comparing cyclic ALE with continuous Ar/C₄F₈ plasma etching during processing of a SiO₂–Si–SiO₂ multilayer stack. The cyclic ALE trajectory exhibits discrete, stepwise movement corresponding to controlled layer-by-layer processing, whereas continuous etching shows a smoother, continuous trajectory, indicating different surface reaction pathways and selectivity between top SiO₂, Si, and bottom SiO₂ layers.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Δ [°] | Ψ [°] |\\n|---|---|\\n| 60 | 13 |\\n| 70 | 14 |\\n| 80 | 15 |\\n| 90 | 16 |\\n| 100 | 17 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ellipsometry trajectory analysis allows direct, real-time differentiation between controlled cyclic ALE and uncontrolled continuous etching. This enables identification of layer transitions, verification of self-limiting behavior, and optimization of etch selectivity in complex multilayer stacks.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cyclic ALE shows stepwise, segmented trajectories, whereas continuous etching produces a smooth, continuous trajector\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Selective etching of top SiO₂, Transition to Si etching, Bottom SiO₂ exposure, Layer-by-layer removal behavior\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_2_figure_9.jpg","caption":"Figure 9. Enhanced potential of precursor choice relative to continuous plasma etching.100 The steady-state surface composition is not reached during a short deposition cycle $(\\sim 3\\mathrm{\\AA}$ in a), whereas for the thicker $(\\sim 15\\mathrm{\\AA})$ film deposited in (b) the carbon 1s photoemission spectrum has become similar to that seen for FC films produced using continuous plasma processes.","id":"train/atomic-layer-etching/experimental-usecase/2/figure_9","sample_id":"atomic-layer-etching/experimental-usecase/2/figure_9","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/Atomic Layer Etching at the Tipping Point An Overview.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":675,"height":378,"image_format":"jpeg","image_sha256":"419454a5053d80d46f8ba11fe7aa9e1dd78f34133826f00ea8b95333c760dfc4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":0,"width":326,"height":378},{"panel_id":"b","x":350,"y":8,"width":325,"height":370}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The C 1s XPS spectrum of the thin fluorocarbon film after deposition shows dominant C–C/C–H and C–CF bonding contributions, with relatively weak C–F₂ and C–F₃ components, indicating a low fluorine content and a polymer structure rich in hydrocarbon-like bonds.\"},{\"panel_id\":\"b\",\"text\":\"The C 1s XPS spectrum of the thick fluorocarbon film after deposition exhibits stronger C–F, C–F₂, and C–F₃ peak intensities compared to the thin film, demonstrating increased fluorination and a higher degree of CFₓ bonding as film thickness increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy [eV] | Intensity [a.u.] |\\n|---|---|\\n| 284 | C-C/H |\\n| 285 | C-CF |\\n| 286 | C-F |\\n| 287 | C-F2 |\\n| 288 | C-F3 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy [eV] | Intensity [a.u.] |\\n|---|---|\\n| 284 | C-C/H |\\n| 285 | C-CF |\\n| 286 | C-F |\\n| 287 | C-F2 |\\n| 288 | C-F3 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A steady-state fluorocarbon surface ensures reproducible surface reactions during ALE cycles, enabling precise thickness control and high selectivity. The similarity between thick deposited films and continuous plasma-grown FC layers indicates that sufficient precursor exposure can stabilize surface chemistry, which is critical for consistent etch performance and minimizing process drift.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thick film shows stronger C–F, C–F₂, and C–F₃ peak intensities, indicating higher fluorination.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"C–C / C–H, C–CF, C–F, C–F₂, C–F₃\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_22_figure_7.jpg","caption":"Figure 7. XPS scans of amorphous as-deposited $\\mathrm{MoS}_2$ samples before and after etching cycles at $200^{\\circ}\\mathrm{C}$ . High-resolution scans of $\\mathrm{S2p}$ and $\\mathrm{Mo3d}$ regions before $(\\mathbf{a},\\mathbf{c})$ and after $(\\mathbf{b},\\mathbf{d})$ 144 etching cycles. A small increase in $\\mathrm{MoO}_3$ peaks is observed, indicating the formation of molyoxide species after the $\\mathrm{H}_2\\mathrm{O}$ dose. No apparent differences in spectra indicate the overall lack of alteration of the film after the etching process.","id":"train/atomic-layer-etching/experimental-usecase/22/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/22/figure_7","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/Thermal Atomic Layer Etching of MoS2 Using MoF6 and H2O.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":983,"height":773,"image_format":"jpeg","image_sha256":"a78f884fb78509603e9eb35eeaaa67deb5c6782d88726b987e0eaaf08fda2fb7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":13,"width":466,"height":373},{"panel_id":"b","x":536,"y":10,"width":447,"height":376},{"panel_id":"c","x":28,"y":402,"width":438,"height":371},{"panel_id":"d","x":536,"y":402,"width":439,"height":371}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Panels (a) shows S 2p XPS spectra at different exposure times, with fitted components and envelope curves revealing shifts in chemical state. The figure also displays Mo 3d spectra under different conditions, showing multiple Mo oxidation states and good fit quality, evidenced by the low residuals above each spectrum\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Intensity (10³ cps) |\\n| ------------------- | ------------------- |\\n| 168 | 0 |\\n| 167 | 0 |\\n| 166 | 0 |\\n| 165 | 0 |\\n| 164 | 15 |\\n| 163 | 14 |\\n| 162 | 10 |\\n| 161 | 6 |\\n| 160 | 2 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Intensity (10³ cps) |\\n| ------------------- | ------------------- |\\n| 168 | 0 |\\n| 167 | 0 |\\n| 166 | 0 |\\n| 165 | 0 |\\n| 164 | 15 |\\n| 163 | 14 |\\n| 162 | 10 |\\n| 161 | 6 |\\n| 160 | 2 |\"},{\"panel_id\":\"c\",\"text\":\"| Binding Energy (eV) | Intensity (10^3 cps) |\\n|---------------------|----------------------|\\n| 240 | 0 |\\n| 239 | 0 |\\n| 238 | 0 |\\n| 237 | 0 |\\n| 236 | 35 |\\n| 235 | 30 |\\n| 234 | 25 |\\n| 233 | 20 |\\n| 232 | 15 |\\n| 231 | 10 |\\n| 230 | 5 |\"},{\"panel_id\":\"d\",\"text\":\"| Binding Energy (eV) | Intensity (10^3 cps) |\\n|---------------------|----------------------|\\n| 240 | 0 |\\n| 239 | 0 |\\n| 238 | 0 |\\n| 237 | 0 |\\n| 236 | 35 |\\n| 235 | 30 |\\n| 234 | 25 |\\n| 233 | 20 |\\n| 232 | 15 |\\n| 231 | 10 |\\n| 230 | 5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The presence of multiple fitted components in the Mo 3d region indicates that molybdenum exists in more than one oxidation state. Peaks corresponding to Mo 3d₅/₂ and Mo 3d₃/₂ doublets are split further, implying a mixture of chemical environments such as Mo⁴⁺ and Mo⁶⁺. This suggests partial oxidation or the coexistence of substoichiometric oxide species in the surface region being probed\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approx. 162 eV\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Raw data,Fit envelope, Background, Individual peak fits, Residuals\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_14.jpg","caption":"Figure 14. XRD spectra of $\\mathrm{ZnS}$ ALD films grown at $100^{\\circ}\\mathrm{C}$ with thicknesses of 20 and $60 \\mathrm{nm}$ . Crystallinity is observed for the $\\mathrm{ZnS}$ ALD film with a thickness of $60 \\mathrm{nm}$ .","id":"train/atomic-layer-etching/experimental-usecase/23/figure_14","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_14","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":664,"height":569,"image_format":"jpeg","image_sha256":"943312859c730116e5831017f43399f41ebb6fd1a7e1373f4403756982a809c1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":5,"width":658,"height":562}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The graph shows the X-ray diffraction patterns for Zinc Sulphide deposited using ALD method at 100C with two thickness values 20 nm and 60 nm . Higher thickness shows a clear sharp crytalline peak\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2Theta (°) | Intensity (Arb. Units) | Thickness (nm)|\\n|---|---|---|\\n| 20 | 0 |20 |\\n| 20 | 0 |60 |\\n| 29 | h(002)/c(111)| 60 |\\n| 30 | 0 |20|\\n| 30 | 0 |60 |\\n| 40 | 0 |20 |\\n| 40 | 0 |60 |\\n| 49 | h(110)/c(220)| 60|\\n| 50 | 0 |20 |\\n| 50 | 0 |60 |\\n| 52 |h(103)| 60 |\\n| 57 |c(311)| 60 |\\n| 60 | 0 |20 |\\n| 60 | 0 |60 |\\n| 70 | 0 |20 |\\n| 70 | 0 |60 |\\n| 80 | 0 |20 |\\n| 80 | 0 |60 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 20 nm film is amorphous; the 60 nm film is crystalline.Crystallinity only emerges as the film grows thicker (red line at 60 nm). Therefore, a seed layer must be significantly thicker than 20 nm (likely >40-50 nm) to provide a crystalline template; a thin 20 nm layer would fail to seed epitaxial growth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 100°C ALD process is forced due to the thermal constraint. The trade-off is that the film will have poorer crystallinity (broader XRD peaks) and potentially higher impurity incorporation, leading to inferior optical and electrical properties compared to a film grown at higher temperature.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The emergence of sharp diffraction peaks at 60 nm confirms the formation of polycrystalline grains. While crystallinity improves electronic properties, the boundaries between these randomly oriented grains (suggested by the mix of h(002), h(110), etc.) can act as scattering centers. Thus, while the 60 nm film is structurally superior, it might exhibit slightly higher optical haze or scattering compared to the amorphous, glassy 20 nm film, depending on the grain size relative to the wavelength of light.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies higher optical quality. Better crystallinity typically leads to a higher, more stable refractive index and lower optical scattering losses. Therefore, the 60 nm film would be more suitable for efficient anti-reflection coatings or multilayer optical filters where consistent optical constants are critical.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_15.jpg","caption":"Figure 15. Thickness of $\\mathrm{ZnS}$ films versus number of $\\mathrm{ZnS}$ ALD cycles using HF and TMA as reactants at $300^{\\circ}\\mathrm{C}$ . Initial $\\mathrm{ZnS}$ film thicknesses were 20, 40, and $60 \\mathrm{nm}$ . Initial $\\mathrm{ZnS}$ ALD films were grown at $100^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/23/figure_15","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_15","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":675,"height":541,"image_format":"jpeg","image_sha256":"e8611ce96e7880bd55aaaed386440910d2c2f38fce9522b6d6f7e14496864bb6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":669,"height":537}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple-line chart shows the thickness change of zinc sulfide thin films as a function of the number of ZnS ALE cycles measured at 300 °C. The etch rate is approximately 2 Å per cycle. The data correspond to initial ZnS film thicknesses of 20, 40, and 60 nm, where the original ZnS ALD films were deposited at 100 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALE Cycles | ZnS Thickness (Å) | Initial Thickness (nm) |\\n|------------|-------------------|-------------|\\n| 0 | 200 | 20 |\\n| 0 | 400 | 40 |\\n| 0 | 600 | 60 |\\n| 50 | 110.02 | 20 |\\n| 50 | 317.31 | 40 |\\n| 50 | 517.47 | 60 |\\n| 100 | 0 | 20 |\\n| 100 | 206 | 40 |\\n| 100 | 406.42 | 60 |\\n| 150 | — | 20 |\\n| 150 | 91.82 | 40 |\\n| 150 | 288.24 | 60 |\\n| 200 | — | 20 |\\n| 200 | 0 | 40 |\\n| 200 | 180.93 | 60 |\\n| 250 | — | 20 |\\n| 250 | — | 40 |\\n| 250 | 57.3 | 60 |\\n| 300 | — | 20 |\\n| 300 | — | 40 |\\n| 300 | 0 | 60 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The procedure involves etching multiple samples with different initial thicknesses under identical ALE conditions and confirming the slope (etch rate) is the same for all. This controls for any measurement artifacts and validates that the removal is truly cycle-dependent, not thickness-dependent.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Thermal ALE would provide better selectivity. Its surface reactions are less aggressive and can be tuned to minimize attack on organic masks, whereas wet etches often undercut and degrade photoresist, leading to loss of pattern fidelity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This occurs because ALE is a surface-limited reaction; each cycle only modifies and removes a fixed monolayer-equivalent from the surface. The bulk film underneath does not influence the surface reaction kinetics, so thickness is irrelevant to the per-cycle etch depth.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This enables absolute thickness correction of ZnS layers in optical interference filters or Bragg mirrors. After deposition, exact numbers of ALE cycles can be applied to trim the layer to the target optical thickness, ensuring precise wavelength performance.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_7.jpg","caption":"Figure 7. QMS spectra during the fourth cycle of $\\mathrm{ZnS}$ ALE at $275^{\\circ}C$ for HF and TMA exposures in three different mass regions: (a) $m / z$ 10 to 40, (b) $m / z$ 60 to 100, and (c) $m / z$ 100 to 215.","id":"train/atomic-layer-etching/experimental-usecase/23/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_7","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":669,"height":1075,"image_format":"jpeg","image_sha256":"c71c049a2ff43dcc1b2a541ad7ae24fc773be655f5670664a1842a5f4afcf76d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":18,"y":720,"width":646,"height":354},{"panel_id":"b","x":10,"y":340,"width":654,"height":361},{"panel_id":"a","x":4,"y":4,"width":661,"height":373}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multiple line chart shows QMS spectra recorded during the fourth cycle of ZnS ALE at 275 °C for HF and TMA exposures, displayed in three different mass-to-charge (m/z) regions. The spectrum in the m/z range of 10–40 compares ion intensities during HF and TMA exposures, highlighting low-mass fragments associated with the reactant and volatile byproducts.\"},{\"panel_id\":\"b\",\"text\":\"The spectrum in the m/z range of 60–100 focuses on intermediate-mass ions, where species such as Al(CH₃)F⁺ and Zn(CH₃)⁺ are detected, indicating the formation of volatile zinc- and aluminum-containing reaction products during the TMA step.\"},{\"panel_id\":\"c\",\"text\":\"The spectrum in the m/z range of 100–215 highlights higher-mass fragments, including aluminum fluoride–methyl complexes such as Al₂F(CH₃)₄⁺ and Al₃F₃(CH₃)₅⁺, confirming fluorine removal through the formation of volatile aluminum–fluoride species.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| m/Z | Intensity (mV) | Condition |\\n|-----|----------------|----------------|\\n| 10 | 0 | HF Exposure |\\n| 10 | 0 | TMA Exposure |\\n| 15 | 809.85 | HF Exposure |\\n| 15 | 714.64 | TMA Exposure |\\n| 20 | 68.71 | HF Exposure |\\n| 20 | 2.95 | TMA Exposure |\\n| 25 | 0 | HF Exposure |\\n| 25 | 18.02 | TMA Exposure |\\n| 30 | 0 | HF Exposure |\\n| 30 | 24.87 | TMA Exposure |\\n| 35 | 127.62 | HF Exposure |\\n| 35 | 0 | TMA Exposure |\\n| 40 | 0 | HF Exposure |\\n| 40 | 18.02 | TMA Exposure |\"},{\"panel_id\":\"b\",\"text\":\"| m/Z | Intensity (mV) | Condition | Species |\\n|-----|----------------|---------------|-----------------------------|\\n| 60 | 0 | HF Exposure | |\\n| 60 | 8.07 | TMA Exposure | |\\n| 61 | 0 | HF Exposure | |\\n| 61 | 121.78 | TMA Exposure | Al(CH₃)F⁺ |\\n| 65 | 0 | HF Exposure | |\\n| 65 | 27.87 | TMA Exposure | |\\n| 70 | 0 | HF Exposure | |\\n| 70 | 4.44 | TMA Exposure | |\\n| 72 | 0 | HF Exposure | |\\n| 72 | 46.98 | TMA Exposure | TMA Parent — Al(CH₃)₃ |\\n| 75 | 0 | HF Exposure | |\\n| 75 | 0.74 | TMA Exposure | |\\n| 79 | 0 | HF Exposure | |\\n| 79 | 49.17 | TMA Exposure | Zn(CH₃)⁺ |\\n| 80 | 0 | HF Exposure | |\\n| 80 | 6.64 | TMA Exposure | |\\n| 81 | 0 | HF Exposure | |\\n| 81 | 23.49 | TMA Exposure | Zn(CH₃)⁺ |\\n| 83 | 0 | HF Exposure | |\\n| 83 | 16.16 | TMA Exposure | Zn(CH₃)⁺ |\\n| 85 | 0 | HF Exposure | |\\n| 85 | 1.5 | TMA Exposure | |\\n| 90 | 0 | HF Exposure | |\\n| 90 | 0 | TMA Exposure | |\\n| 94 | 0 | HF Exposure | |\\n| 94 | 12.53 | TMA Exposure | Zn(CH₃)₂ |\\n| 95 | 0 | HF Exposure | |\\n| 95 | 0.74 | TMA Exposure | |\\n| 96 | 0 | HF Exposure | |\\n| 96 | 7.39 | TMA Exposure | Zn(CH₃)₂ |\\n| 98 | 0 | HF Exposure | |\\n| 98 | 5.88 | TMA Exposure | Zn(CH₃)₂ |\\n| 100 | 0 | HF Exposure | |\\n| 100 | 0 | TMA Exposure | |\"},{\"panel_id\":\"c\",\"text\":\"| m/Z | Intensity (mV) | Condition | Species |\\n|-----|----------------|---------------|--------------------------------|\\n| 100 | 0 | HF Exposure | |\\n| 100 | 0 | TMA Exposure | |\\n| 102 | 0 | HF Exposure | |\\n| 102 | 2.29 | TMA Exposure | |\\n| 103 | 0 | HF Exposure | |\\n| 103 | 7.62 | TMA Exposure | Al₂F(CH₃)₂ |\\n| 107 | 0 | HF Exposure | |\\n| 107 | 30.22 | TMA Exposure | Al₂F₂(CH₃) |\\n| 110 | 0 | HF Exposure | |\\n| 110 | 0 | TMA Exposure | |\\n| 117 | 0 | HF Exposure | |\\n| 117 | 60.35 | TMA Exposure | Al₂F(CH₂)(CH₃)₂ |\\n| 120 | 0 | HF Exposure | |\\n| 120 | 0 | TMA Exposure | |\\n| 121 | 0 | HF Exposure | |\\n| 121 | 13.04 | TMA Exposure | Al₂F(CH₂)₂(CH₃)₂ |\\n| 130 | 0 | HF Exposure | |\\n| 130 | 0 | TMA Exposure | |\\n| 133 | 0 | HF Exposure | |\\n| 133 | 209.8 | TMA Exposure | Al₂F(CH₃)₄ |\\n| 137 | 0 | HF Exposure | |\\n| 137 | 50.71 | TMA Exposure | Al₂F₂(CH₃)₃ |\\n| 140 | 0 | HF Exposure | |\\n| 140 | 0 | TMA Exposure | |\\n| 141 | 0 | HF Exposure | |\\n| 141 | 5.51 | TMA Exposure | Al₂F₃(CH₃)₂ |\\n| 150 | 0 | HF Exposure | |\\n| 150 | | TMA Exposure | |\\n| 213 | 0 | HF Exposure | |\\n| 213 | 50.71 | TMA Exposure | Al₃F₃(CH₃)₅ |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Simple AlF₃ is a non-volatile solid which would stay on the surface (stopping the etch). However, the ligand-exchange reaction with TMA produces mixed Aluminum-Fluoride-Methyl dimers. These specific organometallic structures are sufficiently volatile at the process temperature (275°C), allowing them to desorb and carry the fluorine away, which is the critical requirement for a continuous etch process.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"QMS is superior for real-time byproduct monitoring as it directly detects etch products. Ellipsometry tracks thickness change but cannot identify specific chemical reactions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It confirms the process is chemically stable and self-limiting, enabling precise, layer-by-layer etching essential for nanoscale device fabrication.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Sulfur Removal: HF removes Sulfur. This is evidenced by the strong H₂S⁺ (m/z 34) that appears exclusively during the HF exposure (red line).\\n\\nZinc Removal: TMA removes Zinc. This is evidenced by the appearance of zinc-methyl peaks Zn(CH₃)₂⁺ (m/z 79–98) exclusively during the TMA exposure (blue line).\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_26_fig4.jpg","caption":"Fig.4. (a) $\\mathsf{I}_{\\mathsf{D}} - \\mathsf{V}_{\\mathsf{G}}$ before and after the initialization process. (b) $\\mathsf{V}_{\\mathsf{th}}$ error bar for both processes. (c) $\\mathsf{I}_{\\mathsf{D}} - \\mathsf{V}_{\\mathsf{D}}$ characteristics between two processes. (d) Compare the contact resistance of the two processes at the same etch depth. (e) Off-state leakage and breakdown voltage. (f) Gate breakdown voltage.","id":"train/atomic-layer-etching/experimental-usecase/26/fig4","sample_id":"atomic-layer-etching/experimental-usecase/26/fig4","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"box plot"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"bar chart"},{"panel_id":"e","label":"multiple line chart"},{"panel_id":"f","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/A Normally-Off GaN MIS-HEMT Fabricated.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":572,"height":681,"image_format":"jpeg","image_sha256":"5326bfa3d872587875b647f4bd5fb08e6f3dc381c32ff7b0e0024bfbc6119720","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"d","x":289,"y":245,"width":279,"height":205},{"panel_id":"b","x":289,"y":26,"width":276,"height":196},{"panel_id":"c","x":0,"y":243,"width":290,"height":204},{"panel_id":"e","x":0,"y":452,"width":286,"height":227},{"panel_id":"f","x":287,"y":452,"width":283,"height":226},{"panel_id":"a","x":0,"y":23,"width":290,"height":215}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A multiple line chart showing the relationship between gate voltage (V_G) and drain current (I_D) before and after a process.\"},{\"panel_id\":\"b\",\"text\":\"A box plot comparing the threshold voltage (Vth) for two different etching processes.\"},{\"panel_id\":\"c\",\"text\":\"A multiple line chart showing the drain current (I_D) as a function of drain voltage (V_D) for different ALE process and Cl2 etch.\"},{\"panel_id\":\"d\",\"text\":\"A bar chart showing the normalized resistance (Re.norm) for different etch cycles of Cl2 etch and the original state.\"},{\"panel_id\":\"e\",\"text\":\"A multiple line chart showing the leakage current as a function of drain voltage for different leakage types (ALE-drain leakage (ID), ALE-gate leakage (IG), Cl2 etch-drain leakage (ID), and CL2 etch-gate leakage (IG)).\"},{\"panel_id\":\"f\",\"text\":\"A line chart showing the gate current (I_G) as a function of gate voltage (V_G) for two different etching processes (ALE and CL2 etch).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| V_G (V) | I_D (mA/mm) before | I_D (mA/mm) after |\\n| --- | --- | --- |\\n| -10 | 1e-7 | - |\\n| -5 | 1e-7 | - |\\n| 0 | 1e2 | 1e-7 |\\n| 5 | - | 1e-7 |\\n| 10 | - | 1e2 |\"},{\"panel_id\":\"b\",\"text\":\"| Process | Vth |\\n| --- | --- |\\n| ALE | 5.04 ± 0.10 |\\n| Cl₂ etch | 4.84 ± 0.33 |\"},{\"panel_id\":\"c\",\"text\":\"| V_D (V) | I_D (mA/mm) Cl₂ etch | I_D (mA/mm) ALE |\\n| --- | --- | --- |\\n| 0 | 0 | 0 |\\n| 2 | 200 | 210 |\\n| 4 | 360 | 400 |\\n| 6 | 430 | 510 |\\n| 8 | 580 | 600 |\\n| 10 | 600 | 630 |\\n| 12 | 670 | 700 |\\n| 14 | 700 | 740 |\\n| 16 | 700 | 750 |\"},{\"panel_id\":\"d\",\"text\":\"| Etch cycle | Re.norm (Ω·mm) Cl₂ etch | Re.norm (Ω·mm) ALE |\\n| --- | --- | --- |\\n| 11 | 0.38 | - |\\n| 13 | 0.34 | - |\\n| 15 | 0.32 | - |\\n| 17 | 0.30 | - |\\n| 19 | 0.29 | - |\\n| 21 | 0.25 | - |\\n| 23 | 0.23 | - |\\n| 25 | 0.20 | - |\\n| 27 | 0.19 | - |\\n| 29 | 0.16 | - |\\n| Ori | - | 0.48 |\"},{\"panel_id\":\"e\",\"text\":\"| V_D (V) | ALE-ID | ALE-IG | Cl₂ etch ID | Cl₂ etch IG |\\n| --- | --- | --- | --- | --- |\\n| 0 | 1e-7 | 1e-7 | 1e-7 | 1e-7 |\\n| 300 | 1e-5 | 1e-5 | 1e-5 | 1e-5 |\\n| 600 | 1e-4 | 1e-5 | 1e-4 | 1e-5 |\\n| 900 | 1e-3 | 1e-4 | 1e-3 | 1e-4 |\\n| 1200 | 1e-2 | 1e-2 | 1e-2 | 1e-2 |\"},{\"panel_id\":\"f\",\"text\":\"| V_G (V) | I_G (mA/mm) ALE | I_G (mA/mm) Cl₂ etch |\\n| --- | --- | --- |\\n| 0 | 1e-5 | 1e-5 |\\n| 5 | 1e-5 | 1e-5 |\\n| 10 | 1e-5 | 1e-5 |\\n| 15 | 1e-4 | 1e-4 |\\n| 20 | 1e-3 | 1e-3 |\\n| 25 | 1e2 | - |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The normalized resistance is shown for the original sample, as well as the variation through different amounts of cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of cycles increases, the normalized resistance decreases from around 0.38 Ω·mm to 0.28 Ω·mm.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The initialization process results in a shift of 6.71 V.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As can be seen, the Cl2 etch-drain leakage (ID) curve shows higher leakage current values at different voltages.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_29_fig_4.jpg","caption":"FiG. 4. CL spectra of the AlGaN/GaN stacked film without etching, etched by RIE, and etched by ALE: (a) NBE of AlGaN and (b) NBE of GaN.","id":"train/atomic-layer-etching/experimental-usecase/29/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/29/fig_4","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/Atomic layer etching of AlGaN using Cl2 and Ar gas.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":545,"height":855,"image_format":"jpeg","image_sha256":"be58d939027dbf1f192c5b4f21fca6e73ca233ad50bd92f53ddd7f8723073412","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":2,"y":438,"width":539,"height":413},{"panel_id":"a","x":3,"y":0,"width":541,"height":429}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the cathodoluminescence (CL) intensity of a material at different wavelengths after various treatments (initial, RIE, ALE).\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the cathodoluminescence (CL) intensity of a material at different wavelengths after various treatments (initial, RIE, ALE).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | CL Intensity (au) initial |CL Intensity (au) RIE |CL Intensity (au) ALE |\\n|---|---|---|---|\\n| 300 | 0 |0 |0 |\\n| 310 | 0 |0 |0 |\\n| 320 | 200 |50|20|\\n|326|500|200|100|\\n| 330 | 400 |100|50|\\n| 340 | 80 | 60|50|\\n| 350 | 200|200|200|\"},{\"panel_id\":\"b\",\"text\":\"| Wavelength (nm) | CL Intensity (au) initial |CL Intensity (au) RIE |CL Intensity (au) ALE |\\n|---|---|---|---|\\n| 340 | 0 |0 |0 |\\n| 350 | 0 |0 |0 |\\n| 360 | 5000 | 5000 | 5000 |\\n|365|12000|11000|9500|\\n| 370 | 4000 |4000 |4000 |\\n| 380 | 500 |500 |500 |\\n| 390 | 0 |0 |0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The peak intensity is observed at 350 nm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The maximum difference is around 1500 counts\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ALE seems to decrease the CL intensity the most, eventhough RIE also decreases the CL intensity a lot.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is likely caused by the chemically changing of the emitting material. ALE is likely the chemically change the surface, resulting in a bigger decrease in CL intensity\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_34_fig_4.jpg","caption":"FIG. 4. XPS Al 2p narrow scan spectra of (a) nonplasma-treated $\\mathrm{Al}_2\\mathrm{O}_3$ , (b) 50 W direct plasma at 2 Torr, (c) 50 W direct plasma at 0.6 Torr, and (d) 30 W remote plasma at 0.6 Torr for 300 s.","id":"train/atomic-layer-etching/experimental-usecase/34/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/34/fig_4","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/CF4 plasma-based atomic layer etching of Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":669,"height":498,"image_format":"jpeg","image_sha256":"715e60cf88ad47316508cc418fc0bd6bad113721aa539620ad3a7e94e4987c85","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":498}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"reflects different degrees of peak intensity and binding energy shift, enabling comparison of how plasma environment modifies the chemical state and surface composition of Al₂O₃ during CF₄-based processing.\"},{\"panel_id\":\"b\",\"text\":\"reflects different degrees of peak intensity and binding energy shift, enabling comparison of how plasma environment modifies the chemical state and surface composition of Al₂O₃ during CF₄-based processing.\"},{\"panel_id\":\"c\",\"text\":\"reflects different degrees of peak intensity and binding energy shift, enabling comparison of how plasma environment modifies the chemical state and surface composition of Al₂O₃ during CF₄-based processing.\"},{\"panel_id\":\"d\",\"text\":\"reflects different degrees of peak intensity and binding energy shift, enabling comparison of how plasma environment modifies the chemical state and surface composition of Al₂O₃ during CF₄-based processing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV)|counts/s|\\n|--------------------|--------|\\n|68|0|\\n|70|500|\\n|72|1000|\\n|74|2000|\\n|76|3000|\\n|78|4000|\\n|80|5000|\\n|82|6000|\\n|84|7000|\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV)|counts/s|\\n|--------------------|--------|\\n|68|0|\\n|70|500|\\n|72|1000|\\n|74|2000|\\n|76|3000|\\n|78|4000|\\n|80|5000|\\n|82|6000|\\n|84|7000|\"},{\"panel_id\":\"c\",\"text\":\"| Binding Energy (eV)|counts/s|\\n|--------------------|--------|\\n|68|0|\\n|70|500|\\n|72|1000|\\n|74|2000|\\n|76|3000|\\n|78|4000|\\n|80|5000|\\n|82|6000|\\n|84|7000|\"},{\"panel_id\":\"d\",\"text\":\"| Binding Energy (eV)|counts/s|\\n|--------------------|--------|\\n|68|0|\\n|70|500|\\n|72|1000|\\n|74|2000|\\n|76|3000|\\n|78|4000|\\n|80|5000|\\n|82|6000|\\n|84|7000|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Changes in the XPS spectra directly reflect modifications in surface chemistry caused by CF₄ plasma exposure. A reduction in peak intensity and slight binding-energy shifts suggest the formation of Al–F or AlOF species, indicating partial fluorination and oxygen depletion. These chemical changes affect etch efficiency, surface reactivity, and overall stability of the Al₂O₃ film. Understanding these spectral variations helps optimize plasma conditions for controlled atomic layer etching and improved device fabrication.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The non-plasma-treated sample (curve a) shows the highest peak intensity.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Peak intensity decreases for plasma-treated samples, Slight shifts in peak binding energies, Broadening of peaks at lower plasma power, Increased shoulder formation indicating fluorination or oxygen loss\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_8.jpg","caption":"Fig. 8. (Color online) Narrow-scan XPS spectra of the blanket $\\mathrm{TiO_2}$ surface and the film after $\\mathrm{C_4F_8}$ plasma and $\\mathrm{O_2}$ plasma treatment: (a) Ti 2p, (b) F 1s, and (c) C 1s.","id":"train/atomic-layer-etching/experimental-usecase/36/fig_8","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_8","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":669,"height":1472,"image_format":"jpeg","image_sha256":"c80a8576d211da75629f6384c14785be0f80fe6f04f94caf905bfedfdd6cd990","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":665,"height":479},{"panel_id":"b","x":5,"y":494,"width":656,"height":493},{"panel_id":"c","x":0,"y":993,"width":668,"height":476}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows XP-Spectrum of Ti2p region measured on a TiO₂ surface before and after C₄F₈ + O₂ plasma treatment.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays shows XP-Spectrum of F1s region measured on a TiO₂ surface before and after C₄F₈ + O₂ plasma treatment.\"},{\"panel_id\":\"c\",\"text\":\"The figure presents shows XP-Spectrum of C1s region measured on a TiO₂ surface before and after C₄F₈ + O₂ plasma treatment, highlighting peaks for C-C and O-C=O.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Measurement | Binding energy (eV) | Peak Intensity, a.u. | Assignment | \\n|---|---|---|---|\\n| as TiO₂ deposited | 464.4 | 21 | TiO₂ |\\n| as TiO₂ deposited | 458.7 | 71 | TiO₂ |\\n| Ti2p after C₄F₈ + O₂ plasma treatment | 465.0 | 16 | TiO₂ |\\n| Ti2p after C₄F₈ + O₂ plasma treatment | 459.1 | 54 | TiO₂ |\"},{\"panel_id\":\"b\",\"text\":\"| Measurement | Binding energy (eV) | Peak intensity, a.u. | Assignment | \\n|---|---|---|---|\\n| Ti2p after C₄F₈ + O₂ plasma treatment | 684.8 | 60 | F1s |\"},{\"panel_id\":\"c\",\"text\":\"| Measurement | Binding energy (eV) | Peak intensity, a.u. | Assignment | \\n|---|---|---|---|\\n| as TiO₂ deposited | 288.8 | 8 | O-C=O |\\n| as TiO₂ deposited | 284.8 | 67 | C-C |\\n| Ti2p after C₄F₈ + O₂ plasma treatment | 288.9 | 9 | O-C=O |\\n| Ti2p after C₄F₈ + O₂ plasma treatment | 284.8 | 63 | C-C |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The number of peaks can be explained with spin-orbit splitting. In this case, the 2p splits into two distinct energy states: j = 3/2 and j = 1/2. Because the difference in binding energy between states is larger than the instrument's resolution, they are clearly observed experimentally.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Ti 2p peaks for the plasma-treated sample are shifted slightly to higher binding energies compared to the pristine sample. The shift indicates that some fraction of titanium atoms are now bonded to a more electronegative element than oxygen, specifically fluorine. This confirms the formation of Ti-F bonds on the surface after the plasma treatment.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The state j = 3/2 corresponds to the peak at 458- 469 eV (this peak is statistically more probable and therefore has higher intensity). The state j = 1/2 corresponds to the peak at 464-465 eV . This state is less probable, and the peak is therefore smaller.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The peaks in C1s region can't come from TiO2 intself. Those peaks correspond to surface impurities, often referred to as \\\"adventitious carbon\\\". Even though the sample is \\\"pristine,\\\" exposure to air causes inevitable contamination.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_9.jpg","caption":"Fig. 9. (Color online) Ion currents of thermal desorption spectroscopy (a) after $\\mathrm{C_4F_8}$ plasma treatment and (b) after $\\mathrm{O_2}$ plasma treatment. Mass-to-charge ratios of 67, 86, 105, and 124 correspond to TiF, $\\mathrm{TiF_2}$ , $\\mathrm{TiF_3}$ , and $\\mathrm{TiF_4}$ , respectively.","id":"train/atomic-layer-etching/experimental-usecase/36/fig_9","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_9","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":669,"height":933,"image_format":"jpeg","image_sha256":"2024e22cde17ea165565b5bfeb0a13318c52730b34e37aff036e468db98e951f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":0,"width":663,"height":463},{"panel_id":"b","x":2,"y":473,"width":661,"height":457}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart displays the thermal desorption profile of titanium fluoride species. Significant ion current peaks are observed for TiF, TiF2, TiF3 and TiF4.\"},{\"panel_id\":\"b\",\"text\":\"TThe line chart displays the thermal desorption profile of titanium fluoride species. Significant ion current peaks are observed only for TiF, TiF2, TiF3 and TiF4 are showing negligible signal intensity.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| m/z + species | temperature (°C) | Ion current, (pA) | \\n|---|---|---|\\n| m/z 67 TiF | 222 | 0.1 |\\n| m/z 67 TiF | 386 | 0.66 |\\n| m/z 67 TiF | 468 | 0.98 |\\n| m/z 67 TiF | 605 | 0.36 |\\n| m/z 67 TiF | 807 | 0.21 |\\n| m/z 86 TiF2 | 357 | 0.23 |\\n| m/z 86 TiF2 | 466 | 0.13 |\\n| m/z 86 TiF2 | 781 | 0.10 |\\n| m/z 105 TiF3 | 368 | 0.35 |\\n| m/z 105 TiF3 | 431 | 0.18 |\\n| m/z 105 TiF3 | 470 | 0.33 |\\n| m/z 124 TiF4 | 341 | 0.35 |\\n| m/z 124 TiF4 | 465 | 0.11 |\"},{\"panel_id\":\"b\",\"text\":\"| m/z + species | temperature (°C) | Ion current, (pA) | \\n|---|---|---|\\n| m/z 67 TiF | 376 | 0.16 |\\n| m/z 67 TiF | 715 | 0.05 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiF and TiF₃.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There are two distinct temperature peaks (at ~350°C and ~450°C). The chemical composition of each peak is also different. The first type (~350°C) dissociates into TiF, TiF₂, TiF₃, and TiF₄, and the second type (~450°C) into TiF and TiF₃. . These differences are the evidence that the sample contains two chemically distinct forms of titanium fluoride.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. While the significant desorption peaks for TiF₂, TiF₃ and TiF₄ disappeared, TiF still shows a small residual signal after the O₂ plasma treatment. It is indicating that titanium fluorides were not removed completely.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"One (TiF)\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_43_fig_1.jpg","caption":"Fig. 1. Mass change as a function of processing time (a) during the first 30 ALE cycles and (b) during an ALE cycle. The wafer temperature was $250^{\\circ}\\mathrm{C}$ , and the ALE cycle consisted of an $\\mathrm{NF}_3$ remote plasma, a purge, a TMA pulse, and a purge. $\\Delta \\mathrm{M}_{\\mathrm{Al2O3}}$ indicates the mass loss by an ALE cycle. $\\Delta \\mathrm{M}_{\\mathrm{NF3}}$ and $\\Delta \\mathrm{M}_{\\mathrm{TMA}}$ denote the mass change by $\\mathrm{NF}_3$ remote plasma and TMA pulse, respectively.","id":"train/atomic-layer-etching/experimental-usecase/43/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/43/fig_1","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/Surface reaction during thermal atomic layer etching of aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":623,"height":1219,"image_format":"jpeg","image_sha256":"56451c754ed1c097f2b0683f2e7ae2166b2a1c89da8d7a73b10a13540fab6988","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":0,"width":619,"height":603},{"panel_id":"b","x":3,"y":629,"width":611,"height":588}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents in situ Quartz Crystal Microbalance (QCM) data tracking the mass changes during the atomic layer etching of Al₂O₃ at 250 °C. The line chart shows the cumulative mass change over 30 ALE cycles, displaying a linear downward trend (negative slope), which indicates a constant etch rate throughout the process.\"},{\"panel_id\":\"b\",\"text\":\"The line chart shows the details a single ALE cycle. It shows a mass increase (ΔM_{NF₃}) during the NF₃ plasma step due to fluorination, followed by a sharp mass decrease during the TMA step (ΔM_{TMA}), resulting in a net negative mass change (ΔM_{Al₂O₃}) relative to the initial baseline.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Process Time (s) | Mass Change (ng/cm²) |\\n|------------------|-----------------------|\\n| 0 | 200 |\\n| 100 | 260 |\\n| 200 | 150 |\\n| 300 | 180 |\\n| 400 | 120 |\\n| 500 | 180 |\\n| 600 | 80 |\\n| 700 | 160 |\\n| 800 | 40 |\\n| 900 | 140 |\\n| 1000 | 0 |\\n| 1100 | 120 |\\n| 1200 | -40 |\\n| 1300 | 100 |\\n| 1400 | -80 |\\n| 1500 | 80 |\\n| 1600 | -120 |\\n| 1700 | 60 |\\n| 1800 | -160 |\\n| 1900 | 40 |\\n| 2000 | -200 |\\n| 2100 | 20 |\\n| 2200 | -240 |\\n| 2300 | 0 |\\n| 2400 | -280 |\\n| 2500 | -20 |\\n| 2600 | -320 |\\n| 2700 | -40 |\\n| 2800 | -360 |\\n| 2900 | -60 |\\n| 3000 | -400 |\\n| 3100 | -80 |\\n| 3200 | -440 |\\n| 3300 | -100 |\\n| 3400 | -480 |\\n| 3500 | -120 |\\n| 3600 | -520 |\\n| 3700 | -140 |\\n| 3800 | -560 |\\n| 3900 | -160 |\\n| 4000 | -600 |\\n| 4100 | -180 |\\n| 4200 | -640 |\\n| 4300 | -200 |\\n| 4400 | -680 |\\n| 4500 | -220 |\\n| 4600 | -720 |\\n| 4700 | -240 |\\n| 4800 | -760 |\\n| 4900 | -260 |\\n| 5000 | -800 |\\n| 5100 | -280 |\\n| 5200 | -840 |\\n| 5300 | -300 |\\n| 5400 | -880 |\\n| 5500 | -320 |\\n| 5600 | -920 |\\n| 5700 | -340 |\\n| 5800 | -960 |\\n| 5900 | -360 |\\n| 6000 | -1000 |\\n| 6100 | -380 |\\n| 6200 | -1040 |\\n| 6300 | -400 |\"},{\"panel_id\":\"b\",\"text\":\"| Process Time (s) | Mass Change (ng/cm²) of NF3 Plasma | Mass Change (ng/cm²) of TMA |\\n|------------------|-------------------------|-------------------------|\\n| 6398 | -843 | -- |\\n| 6407 | -882 | -- |\\n| 6414 | -746 | -- |\\n| 6419 | -556 | -- |\\n| 6426 | -644 | -- |\\n| 6437 | -765 | -- |\\n| 6480 | -798 | -- |\\n| 6518 | -800 | -- |\\n| 6587 | -800 | -- |\\n| 6525 | -- | -854 |\\n| 6531 | -- | -698 |\\n| 6534 | -- | -611 |\\n| 6544 | -- | -746 |\\n| 6558 | -- | -843 |\\n| 6587 | -- | -864 |\\n| 6634 | -- | -870 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE process is required. Continuous plasma etching has no inherent stop mechanism and would rapidly etch through the underlying Si. ALE provides digital etch control; each cycle removes a known, self-limiting thickness (ΔM_Al₂O₃). By counting cycles, you can stop precisely at the Al₂O₃/Si interface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This linearity implies excellent process robustness and predictability, which is critical for manufacturing. It confirms that the surface chemistry is stable and self-limiting cycle after cycle, enabling precise depth control by simply counting cycles. This reproducibility allows the etch depth to be determined by the number of cycles run, meeting strict manufacturing tolerances.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"NF₃ plasma: Mass increases due to surface fluorination.\\n\\nPurge\\n\\nTMA pulse: A brief mass rise occurs from adsorption, followed by a rapid mass drop caused by ligand exchange and volatilization.\\n\\nPurge: The mass stabilizes at a new, lower baseline after by-product removal.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The NF₃ step fluorinates the Al₂O₃ surface, adding fluorine atoms to form an AlFₓ or AlOₓFᵧ layer, which increases the mass. The TMA step reacts with this fluorinated layer, forming volatile AlF₃ and removing both the newly added fluorine and underlying aluminum/oxygen atoms, resulting in a net mass loss greater than the initial gain.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_43_fig_2.jpg","caption":"Fig. 2. Al 2p XPS peak from $\\mathrm{Al_2O_3}$ films (a) after fluorination step, (b) after full cycles of ALE.","id":"train/atomic-layer-etching/experimental-usecase/43/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/43/fig_2","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/Surface reaction during thermal atomic layer etching of aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":639,"height":1539,"image_format":"jpeg","image_sha256":"11da792511df27741981c80754d766d807ff2f245c67e6fea72e14fab7884079","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":0,"width":632,"height":725},{"panel_id":"b","x":17,"y":782,"width":616,"height":736}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The XPS (X-ray photoelectron spectroscopy) graph shows the Al 2p peaks after fluorination, with features corresponding to Al–O, AlOxFy, and Al–F. The intensity vs. binding energy spectrum confirms modification of the Al₂O₃ film, with deconvoluted peaks at 74.5, 75.8, and 76.5 eV assigned to Al–O, AlOxFy, and Al–F, indicating the formation of AlF₃ and AlOxFy by F radicals.\"},{\"panel_id\":\"b\",\"text\":\"The XPS (X-ray photoelectron spectroscopy) graph shows the Al 2p peaks after fluorination, with features corresponding to Al–O and AlOxFy. The intensity vs. binding energy spectrum confirms modification of the Al₂O₃ film, with deconvoluted peaks at 74.5, 75.8, and 76.5 eV assigned to Al–O, AlOxFy, indicating the formation of AlF₃ and AlOxFy by F radicals.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Species label | Approx. binding energy (eV) | \\n|---------------|-----------------------------|\\n| Al–O | 74.5–75.0 | \\n| AlOₓFᵧ | 74.0–74.5 | \\n| Al–F | 73.5–74.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"State (a) is more desirable because the presence of a distinct Al–F peak implies a complete, stoichiometric conversion of the surface layer to a stable fluoride. State (b) represents an intermediate oxyfluoride which may react less cleanly or slowly with the TMA.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"State (a): The surface contains Al–O, AlOₓFᵧ, and Al–F species.\\nState (b): The surface contains Al–O and AlOₓFᵧ species, with Al–F fully removed.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Fluorine atoms replace oxygen, forming Al–F bonds. Fluorine is more electronegative than oxygen, increasing the positive charge on the Al atom, which requires more energy to eject a core electron (Al 2p), causing a higher binding energy shift. Multiple states appear because fluorination is a gradient process; the surface converts fully to Al–F, while subsurface regions have mixed Al–OₓFᵧ, and the bulk remains Al–O.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, A uniform, digital ALE process requires a sharp, fully converted interface between the fluorinated layer and the pristine Al₂O₃ beneath. The broad Al–OₓFᵧ peak indicates a graded, partially reacted transition zone. This gradient would lead to non-uniform etch depths and poor atomic-scale control, as the TMA step would not remove a well-defined monolayer.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_45_figure_11.jpg","caption":"Figure 11 shows the XRR scans of the initial TiN film on the Si wafer and the TiN films after various numbers of ALE cycles Figure 11. X-ray reflectivity scans versus number of $\\mathrm{H}_2\\mathrm{O}_2$ and HF reaction cycles on TiN films at $250^{\\circ}\\mathrm{C}$","id":"train/atomic-layer-etching/experimental-usecase/45/figure_11","sample_id":"atomic-layer-etching/experimental-usecase/45/figure_11","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/Thermal Atomic Layer Etching of Titanium Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":675,"height":672,"image_format":"jpeg","image_sha256":"53c86e16d502824778d009a042d2e929dc3e7807503ce1d79f770545873f37c6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":669,"height":666}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure displays XRR scans for TiN films before and after different numbers of thermal ALE cycles using H₂O₂ and HF at 250°C. Five scans are shown: initial TiN (a), and after 50 (b), 100 (c), 200 (d), and 400 (e) ALE cycles. The progressive changes in the curves demonstrate systematic film thickness reduction with increasing cycles, confirming effective etching at 0.15 Å/cycle. The interference fringe evolution also indicates surface smoothing during the ALE process.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| omega-2theta (arcsec) | (a) TiN (Intensity) | (b) 50c ALE (Intensity) | (c) 100c ALE (Intensity) | (d) 200c ALE (Intensity) | (e) 400c ALE (Intensity) |\\n|---|---|---|---|---|---|\\n| 1000 | 1.5e11 | 6.0e9 | 2.0e8 | 6.0e6 | 2.0e5 |\\n| 2000 | 8.0e9 | 3.0e8 | 5.0e6 | 1.0e5 | 3.0e3 |\\n| 3000 | 6.0e8 | 1.0e6 | 1.0e5 | 6.0e3 | 3.0e2 |\\n| 4000 | 3.0e9 | 1.0e7 | 2.5e5 | 1.5e3 | 1.0e2 |\\n| 5000 | 8.0e8 | 3.0e6 | 8.0e4 | 6.0e2 | 4.0e1 |\\n| 6000 | 1.0e8 | 3.0e5 | 3.0e4 | 3.0e2 | 1.5e1 |\\n| 7000 | 3.0e7 | 6.0e5 | 1.5e4 | 1.5e2 | 1.0e1 |\\n| 8000 | 1.0e7 | 1.0e5 | 1.0e4 | 1.0e2 | 6.0e0 |\\n| 9000 | 5.0e6 | 5.0e4 | 6.0e3 | 8.0e1 | 3.0e0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the number of ALE cycles increases from 0 to 400, the XRR curves show systematic changes reflecting progressive film thickness reduction. The interference oscillations shift and change in periodicity, correlating with decreasing film thickness from approximately 63 Å initially to much thinner values after 400 cycles. Additionally, the amplitude and sharpness of oscillation features change, indicating that surface roughness decreases during etching, from 9.3 Å initially to 6.5 Å after 100 cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.15 Å/cycle by spectroscopic ellipsometry and 0.14 Å/cycle by XRR.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"XRR provides quantitative information about film thickness, electron density, and surface roughness. The angular positions and periodicity of interference fringes directly relate to film thickness, with thinner films producing wider spaced oscillations. The rate of intensity decay with increasing angle is sensitive to surface roughness, where rougher surfaces cause faster intensity falloff. These measurements confirmed both the linear thickness reduction and surface smoothing during TiN ALE.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"(a) initial TiN film, (b) after 50 ALE cycles, (c) after 100 cycles, (d) after 200 cycles, (e) after 400 cycles.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_45_figure_6.jpg","caption":"Figure 6. X-ray reflectivity scans versus number of $\\mathrm{O}_3$ and HF reaction cycles on TiN films at $250^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/45/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/45/figure_6","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/Thermal Atomic Layer Etching of Titanium Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":672,"height":684,"image_format":"jpeg","image_sha256":"3bcae7058e22a1505cbe3fe1353b301f1b2e2a9546f680e21b9d1bafefda705d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":667,"height":682}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows XRR scans for TiN films before and after various numbers of ALE cycles using O₃ and HF at 250°C. Six scans are displayed: initial TiN (a), and after 50 (b), 100 (c), 150 (d), 200 (e), and 300 (f) ALE cycles. The interference fringes progressively change with cycle number, reflecting linear film thickness reduction at approximately 0.20 Å/cycle. The curves also reveal decreasing surface roughness from 9.3 Å initially to 7.5 Å after 100 cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ω-2θ (arcsec) | TiN | 50c ALE | 100c ALE | 150c ALE | 200c ALE | 300c ALE |\\n|---|---|---|---|---|---|---|\\n| 1000 | 10^8 | 10^6 | 10^4 | 10^2 | 10^0 | 10^-2 |\\n| 2000 | 10^9 | 10^7 | 10^5 | 10^3 | 10^1 | 10^-1 |\\n| 3000 | 10^10 | 10^8 | 10^6 | 10^4 | 10^2 | 10^0 |\\n| 4000 | 10^11 | 10^9 | 10^7 | 10^5 | 10^3 | 10^1 |\\n| 5000 | 10^12 | 10^10 | 10^8 | 10^6 | 10^4 | 10^2 |\\n| 6000 | 10^13 | 10^11 | 10^9 | 10^7 | 10^5 | 10^3 |\\n| 7000 | 10^14 | 10^12 | 10^10 | 10^8 | 10^6 | 10^4 |\\n| 8000 | 10^15 | 10^13 | 10^11 | 10^9 | 10^7 | 10^5 |\\n| 9000 | 10^16 | 10^14 | 10^12 | 10^10 | 10^8 | 10^6 |\\n| 10000 | 10^17 | 10^15 | 10^13 | 10^11 | 10^9 | 10^7 |\"},{\"panel_id\":\"b\",\"text\":\"| ω-2θ (arcsec) | TiN | 50c ALE | 100c ALE | 150c ALE | 200c ALE | 300c ALE |\\n|---|---|---|---|---|---|---|\\n| 1000 | 10^8 | 10^6 | 10^4 | 10^2 | 10^0 | 10^-2 |\\n| 2000 | 10^9 | 10^7 | 10^5 | 10^3 | 10^1 | 10^-1 |\\n| 3000 | 10^10 | 10^8 | 10^6 | 10^4 | 10^2 | 10^0 |\\n| 4000 | 10^11 | 10^9 | 10^7 | 10^5 | 10^3 | 10^1 |\\n| 5000 | 10^12 | 10^10 | 10^8 | 10^6 | 10^4 | 10^2 |\\n| 6000 | 10^13 | 10^11 | 10^9 | 10^7 | 10^5 | 10^3 |\\n| 7000 | 10^14 | 10^12 | 10^10 | 10^8 | 10^6 | 10^4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The XRR measurements reveal progressive surface smoothing during TiN ALE. The initial TiN film had a roughness of 9.3 Å. After 25, 50, and 100 ALE cycles, the roughness decreased to 8.5, 8.2, and 7.5 Å respectively. This smoothing effect is consistent with previous observations for Al₂O₃ and HfO₂ ALE using fluorination and ligand exchange reactions, and represents a beneficial feature of the thermal ALE process.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 0.20 Å/cycle by XRR and 0.19 Å/cycle by spectroscopic ellipsometry.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No TiN etching was observed when using O₂ instead of O₃ with HF. Although the oxidation of TiN by O₂ is thermochemically favorable, at temperatures below 350°C, O₂ only slowly forms a thin TiO₂ layer and creates an intermediate titanium oxynitride (TiOₓNᵧ) phase. The strong oxidizing ability of O₃ is necessary to fully convert TiN or TiOₓNᵧ to TiO₂, which can then be etched by HF to form volatile TiF₄.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The logarithmic scale (10⁰ to 10¹⁴) indicates the curves are vertically offset for visual comparison rather than showing absolute intensities.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_15.jpg","caption":"Figure 15. High resolution XPS scans of (a) Ti 2p and (b) Ti 1s regions for $4\\mathrm{mm}$ $\\mathrm{TiO_2}$ film following 0, 25, 50, 100, 150, and $200\\mathrm{W}\\mathrm{F}_6 / \\mathrm{BCl}_3$ cycles in the ALE reactor at $170^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/46/figure_15","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_15","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":873,"height":341,"image_format":"jpeg","image_sha256":"72b5d02ac39221a4cf26d08ed177c57d8c9378d813e7315bf97c0d066e92b035","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":428,"height":338},{"panel_id":"b","x":439,"y":3,"width":432,"height":334}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows high-resolution XPS Ti 2p binding energy spectra recorded at different ALE cycle numbers, illustrating the progressive reduction and eventual disappearance of the Ti–O doublet as the TiO₂ film is etched away.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows high-resolution XPS F 1s binding energy spectra measured at different ALE cycle numbers, indicating low and stable fluorine content with only minor metal-fluoride contributions during the etching process.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Counts (a.u.) | ALE Cycles | Peak Presence |\\n|--------------------|--------------|------------|---------------|\\n| 470 | 8500 | 0 | No peak |\\n| 470 | 12000 | 25 | No peak |\\n| 470 | 15000 | 50 | No peak |\\n| 470 | 18000 | 100 | No peak |\\n| 470 | 22000 | 150 | No peak |\\n| 470 | 26000 | 200 | No peak |\\n| 468 | 9000 | 0 | No peak |\\n| 468 | 13000 | 25 | No peak |\\n| 468 | 16000 | 50 | No peak |\\n| 468 | 20000 | 100 | No peak |\\n| 468 | 24000 | 150 | No peak |\\n| 468 | 28000 | 200 | No peak |\\n| 466 | 10000 | 0 | Ti–O |\\n| 466 | 14500 | 25 | Ti–O |\\n| 466 | 19000 | 50 | Ti–O |\\n| 466 | 23000 | 100 | Ti–O |\\n| 466 | 27000 | 150 | Ti–O |\\n| 466 | 31000 | 200 | Ti–O |\\n| 464 | 10500 | 0 | Ti–O |\\n| 464 | 15500 | 25 | Ti–O |\\n| 464 | 20000 | 50 | Ti–O |\\n| 464 | 24500 | 100 | Ti–O |\\n| 464 | 30000 | 150 | Ti–O |\\n| 464 | 34000 | 200 | Ti–O |\\n| 462 | 9800 | 0 | No peak |\\n| 462 | 14000 | 25 | No peak |\\n| 462 | 18000 | 50 | No peak |\\n| 462 | 22000 | 100 | No peak |\\n| 462 | 26000 | 150 | No peak |\\n| 462 | 30000 | 200 | No peak |\\n| 460 | 12000 | 0 | Ti–O |\\n| 460 | 17000 | 25 | Ti–O |\\n| 460 | 22000 | 50 | Ti–O |\\n| 460 | 27000 | 100 | Ti–O |\\n| 460 | 31000 | 150 | Ti–O |\\n| 460 | 36000 | 200 | Ti–O |\\n| 458 | 18000 | 0 | Ti–O |\\n| 458 | 23000 | 25 | Ti–O |\\n| 458 | 27000 | 50 | Ti–O |\\n| 458 | 31000 | 100 | Ti–O |\\n| 458 | 35000 | 150 | Ti–O |\\n| 458 | 39000 | 200 | Ti–O |\\n| 456 | 11000 | 0 | No peak |\\n| 456 | 15000 | 25 | No peak |\\n| 456 | 19000 | 50 | No peak |\\n| 456 | 23000 | 100 | No peak |\\n| 456 | 27000 | 150 | No peak |\\n| 456 | 31000 | 200 | No peak |\\n| 454 | 9000 | 0 | No peak |\\n| 454 | 13000 | 25 | No peak |\\n| 454 | 17000 | 50 | No peak |\\n| 454 | 21000 | 100 | No peak |\\n| 454 | 25000 | 150 | No peak |\\n| 454 | 29000 | 200 | No peak |\\n| 452 | 8500 | 0 | No peak |\\n| 452 | 12000 | 25 | No peak |\\n| 452 | 15000 | 50 | No peak |\\n| 452 | 19000 | 100 | No peak |\\n| 452 | 23000 | 150 | No peak |\\n| 452 | 27000 | 200 | No peak |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Counts (a.u.) | ALE Cycles | Peak Presence |\\n|--------------------|--------------|------------|---------------|\\n| 695 | 6200 | 0 | No peak |\\n| 695 | 6600 | 25 | No peak |\\n| 695 | 7000 | 50 | No peak |\\n| 695 | 7400 | 100 | No peak |\\n| 695 | 7800 | 150 | No peak |\\n| 695 | 8200 | 200 | No peak |\\n| 692 | 6400 | 0 | No peak |\\n| 692 | 6900 | 25 | No peak |\\n| 692 | 7300 | 50 | No peak |\\n| 692 | 7700 | 100 | No peak |\\n| 692 | 8200 | 150 | No peak |\\n| 692 | 8600 | 200 | No peak |\\n| 690 | 6500 | 0 | F–C |\\n| 690 | 7000 | 25 | F–C |\\n| 690 | 7600 | 50 | F–C |\\n| 690 | 8200 | 100 | F–C |\\n| 690 | 8900 | 150 | F–C |\\n| 690 | 9300 | 200 | F–C |\\n| 688 | 6300 | 0 | No peak |\\n| 688 | 6700 | 25 | No peak |\\n| 688 | 7100 | 50 | No peak |\\n| 688 | 7500 | 100 | No peak |\\n| 688 | 8000 | 150 | No peak |\\n| 688 | 8400 | 200 | No peak |\\n| 686 | 6500 | 0 | F–M |\\n| 686 | 6900 | 25 | F–M |\\n| 686 | 7400 | 50 | F–M |\\n| 686 | 8100 | 100 | F–M |\\n| 686 | 8700 | 150 | F–M |\\n| 686 | 9100 | 200 | F–M |\\n| 684 | 6300 | 0 | No peak |\\n| 684 | 6600 | 25 | No peak |\\n| 684 | 7000 | 50 | No peak |\\n| 684 | 7400 | 100 | No peak |\\n| 684 | 7800 | 150 | No peak |\\n| 684 | 8200 | 200 | No peak |\\n| 682 | 6200 | 0 | No peak |\\n| 682 | 6500 | 25 | No peak |\\n| 682 | 6900 | 50 | No peak |\\n| 682 | 7200 | 100 | No peak |\\n| 682 | 7600 | 150 | No peak |\\n| 682 | 8000 | 200 | No peak |\\n| 680 | 6150 | 0 | No peak |\\n| 680 | 6450 | 25 | No peak |\\n| 680 | 6850 | 50 | No peak |\\n| 680 | 7150 | 100 | No peak |\\n| 680 | 7500 | 150 | No peak |\\n| 680 | 7850 | 200 | No peak |\\n| 678 | 6100 | 0 | No peak |\\n| 678 | 6400 | 25 | No peak |\\n| 678 | 6800 | 50 | No peak |\\n| 678 | 7100 | 100 | No peak |\\n| 678 | 7450 | 150 | No peak |\\n| 678 | 7800 | 200 | No peak |\\n| 676 | 6050 | 0 | No peak |\\n| 676 | 6350 | 25 | No peak |\\n| 676 | 6750 | 50 | No peak |\\n| 676 | 7050 | 100 | No peak |\\n| 676 | 7400 | 150 | No peak |\\n| 676 | 7750 | 200 | No peak |\\n| 675 | 6000 | 0 | No peak |\\n| 675 | 6300 | 25 | No peak |\\n| 675 | 6700 | 50 | No peak |\\n| 675 | 7000 | 100 | No peak |\\n| 675 | 7350 | 150 | No peak |\\n| 675 | 7700 | 200 | No peak |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Finish 100 ALE cycles.\\n\\n, Cool under inert gas.\\n\\n, Transfer to XPS without air.\\n\\n, Acquire spectra.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"WF₆/BCl₃ is better. It leaves no carbon residue, unlike CF₄ plasma.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ti–O bonds decrease. Ti–F bonds increase. Fluorination makes the surface volatile for etching.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process is stable and predictable. Etch depth can be controlled precisely by cycle count.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_4.jpg","caption":"Figure 4. High resolution XPS scans of (a) Ti $2\\mathrm{p}$ , (b) Si $2\\mathrm{p}$ , (c) W $4\\mathrm{f}$ , and (d) F $1\\mathrm{s}$ regions for $\\sim 6.5 \\mathrm{nm} \\mathrm{TiO}_2$ films exposed to $0$ , $1$ , $5$ , and $15 \\mathrm{WF}_6$ doses at $220^{\\circ}C$","id":"train/atomic-layer-etching/experimental-usecase/46/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_4","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":992,"height":775,"image_format":"jpeg","image_sha256":"58994b56911823ae13afd50c7b1b51c00dbe7eef3bdeff783d1c9070bbeb9f9e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":12,"width":467,"height":378},{"panel_id":"b","x":493,"y":16,"width":489,"height":373},{"panel_id":"c","x":11,"y":407,"width":474,"height":364},{"panel_id":"d","x":502,"y":400,"width":489,"height":371}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents high-resolution X-ray Photoelectron Spectroscopy (XPS) scans tracking surface chemistry changes of a ~6.5 nm TiO₂ film during WF₆ exposure at 220°C. Ti 2p Region: The persistent Ti–O doublet confirms the presence of the TiO₂ film throughout the process. The intensity changes indicate partial modification or thinning of the oxide during etching.\"},{\"panel_id\":\"b\",\"text\":\"Si 2p Region: Initially (0 Doses, black line), the signal is negligible. As WF₆ doses increase (red → pink), distinct Si–Si (substrate) and Si–O (interface) peaks appear, indicating thinning of the TiO₂ film and exposure of the underlying silicon wafer.\"},{\"panel_id\":\"c\",\"text\":\"Tungsten Residue (W 4f Region): Shows accumulation of tungsten-containing species, overlapping with Ti–O signals, indicating incorporation or adsorption of WF₆ reaction products on the surface.\"},{\"panel_id\":\"d\",\"text\":\"Fluorine Residue (F 1s Region): Tracks the buildup of fluorine on the surface (F–M and F–C), confirming surface fluorination during WF₆ exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Counts (a.u.) | WF₆ Doses | Peak |\\n|---------------------|---------------|-----------|--------|\\n| 468 | 5200 | 0 | |\\n| 468 | 12000 | 1 | |\\n| 468 | 20000 | 5 | |\\n| 468 | 27000 | 15 | |\\n| 465 | 9800 | 0 | Ti-O |\\n| 465 | 17000 | 1 | Ti–O |\\n| 465 | 24000 | 5 | Ti–O |\\n| 465 | 32000 | 15 | Ti–O |\\n| 462 | 5400 | 0 | |\\n| 462 | 12000 | 1 | |\\n| 462 | 20000 | 5 | |\\n| 462 | 27000| 15 | |\\n| 460 | 6600 | 0 | |\\n| 460 | 16000 | 1 | |\\n| 460 | 22000 | 5 | |\\n| 460 | 30000 | 15 | |\\n| 459 | 20000 | 0 | Ti–O |\\n| 459 | 26000 | 1 | Ti–O |\\n| 459 | 33000 | 5 | Ti–O |\\n| 459 | 41000 | 15 | Ti–O |\\n| 456 | 8000 | 0 | |\\n| 456 | 14000 | 1 | |\\n| 456 | 22000 | 5 | |\\n| 456 | 30000 | 15 | |\\n| 452 | 3200 | 0 | |\\n| 452 | 10000 | 1 | |\\n| 452 | 18000 | 5 | |\\n| 452 | 26000 | 15 | |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Counts (a.u.) | WF₆ Doses | Peak|\\n|---------------------|---------------|-----------|--------|\\n| 106 | 780 | 0 | |\\n| 106 | 1050 | 1 | |\\n| 106 | 1350 | 5 | |\\n| 106 | 1550 | 15 | |\\n| 102 | 820 | 0 | Si–O |\\n| 102 | 1100 | 1 | Si–O |\\n| 102 | 1400 | 5 | Si–O |\\n| 102 | 1650 | 15 | Si–O |\\n| 98 | 1050 | 0 | Si–Si |\\n| 98 | 1350 | 1 | Si–Si |\\n| 98 | 1600 | 5 | Si–Si |\\n| 98 | 1850 | 15 | Si–Si |\\n| 94 | 780 | 0 | |\\n| 94 | 1050 | 1 | |\\n| 94 | 1300 | 5 | |\\n| 94 | 1500 | 15 | |\"},{\"panel_id\":\"c\",\"text\":\"| Binding Energy (eV) | Counts (a.u.) | WF₆ Doses | Peak |\\n|---------------------|---------------|-----------|--------|\\n| 42 | 650 | 0 | |\\n| 42 | 1600 | 1 | |\\n| 42 | 2400 | 5 | |\\n| 42 | 3200 | 15 | |\\n| 40 | 600 | 0 | |\\n| 40 | 1600 | 1 | |\\n| 40 | 2400 | 5 | |\\n| 40 | 3200 | 15 | |\\n| 38 | 2200 | 0 | W–O |\\n| 38 | 3600 | 1 | W–O |\\n| 38 | 4700 | 5 | W–O |\\n| 38 | 5400 | 15 | W–O |\\n| 36 | 2000 | 0 | Ti–O |\\n| 36 | 3200 | 1 | Ti–O |\\n| 36 | 4200 | 5 | Ti–O |\\n| 36 | 5000 | 15 | Ti–O |\\n| 32 | 400 | 0 | |\\n| 32 | | 1 | |\\n| 32 | 1900 | 5 | |\\n| 32 | 2600 | 15 | |\\n| 30 | 400 | 0 | |\\n| 30 | | 1 | |\\n| 30 | | 5 | |\\n| 30 | 2500 | 15 | |\"},{\"panel_id\":\"d\",\"text\":\"| Binding Energy (eV) | Counts (a.u.) | WF₆ Doses | Peak|\\n|---------------------|---------------|-----------|--------|\\n| 695 | 7400 | 0 | |\\n| 695 | | 1 | |\\n| 695 | | 5 | |\\n| 695 | 10400 | 15 | |\\n| 690 | 8300 | 0 | F–C |\\n| 690 | 8700 | 1 | |\\n| 690 | 9800 | 5 | |\\n| 690 | 10800 | 15 | |\\n| 685 | 7500 | 0 | |\\n| 685 | 8900 | 1 | F–M |\\n| 685 | 10200 | 5 | F–M |\\n| 685 | 11500 | 15 | F–M |\\n| 680 | | 0 | |\\n| 680 | 8600 | 1 | |\\n| 680 | 9700 | 5 | |\\n| 680 | 10400 | 15 | |\\n| 675 | | 0 | |\\n| 675 | 8500 | 1 | |\\n| 675 | 9600 | 5 | |\\n| 675 | 10300 | 15 | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thermal WF₆ vapor process is preferable for conformality. WF₆ molecules can diffuse evenly into deep structures for a uniform surface reaction. Plasma CF₄ processes suffer from poor conformality due to short radical lifetimes, directional ions, and charging effects in high-aspect-ratio features, leading to non-uniform fluorination.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TiO₂ surface is progressively fluorinated and modified. Ti–O bonds (Ti 2p) decrease while Ti–F bonds form (shifted Ti 2p, F 1s). Simultaneously, a tungsten oxyfluoride (W–O–F) layer forms (W 4f), and fluorine incorporates (F 1s). The final surface is a mixture of titanium fluoride and a tungsten-containing passivation/interface layer.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the first few ALE cycles will have a different and evolving etch rate. The surface must be converted to a steady-state tungsten-modified layer before consistent, self-limiting etch behavior is achieved. This nucleation period mirrors the incubation seen in QCM data and must be accounted for in process design to ensure etch uniformity.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Film thinning / etching. The appearance of the silicon substrate signals indicates that the TiO₂ overlayer has been significantly etched away, allowing photoelectrons from the underlying Si wafer and interfacial SiO₂ to escape and be detected.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_9.jpg","caption":"Figure 9. High resolution XPS scans of (a) Ti 2p, (b) F 1s, (c) W 4f, and (d) Sn 3d regions for $6.5 \\mathrm{nm} \\mathrm{TiO}_2$ films following 0, 15, and $25 \\mathrm{WF}_6 / \\mathrm{Ar} / \\mathrm{Sn}(\\mathrm{acac})_2 / \\mathrm{Ar}$ cycles at $220^{\\circ} \\mathrm{C}$ and 1.75 Torr.","id":"train/atomic-layer-etching/experimental-usecase/46/figure_9","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_9","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":950,"height":761,"image_format":"jpeg","image_sha256":"5508111d8371a762159e4a4f80fa064c3cfb173a91d8ac607544a6da17d2be39","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":14,"width":476,"height":368},{"panel_id":"b","x":488,"y":0,"width":461,"height":381},{"panel_id":"c","x":12,"y":393,"width":460,"height":367},{"panel_id":"d","x":486,"y":389,"width":463,"height":370}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents high-resolution XPS spectra tracking the surface chemistry evolution of a TiO₂ film after 0, 15, and 25 cycles of a WF₆/Ar/Sn(acac)₂/Ar process at 220°C. The Titanium signal (Ti 2p) remains strong even after 25 cycles, showing that the TiO₂ film is largely preserved, though partial conversion of Ti–O to Ti–F occurs.\"},{\"panel_id\":\"b\",\"text\":\"The Fluorine signal (F 1s) grows progressively, indicating fluorine incorporation on the surface.\"},{\"panel_id\":\"c\",\"text\":\"The Tungsten signal (W 4f) shows significant accumulation, reflecting the formation of a tungsten oxyfluoride layer (W–O/F).\"},{\"panel_id\":\"d\",\"text\":\"The Tin signal (Sn 3d) also increases, showing the appearance of tin oxide (Sn–O) species and contributing to the formation of a mixed metal-fluoride/oxide layer (W–Sn–F–O) atop the TiO₂. The data reveals that, unlike the etching behavior seen with BCl₃, this reactant combination does not remove the TiO₂ film but instead leads to surface modification and deposition of additional species\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Counts (a.u.) | Cycles | Peak |\\n|---------------------|---------------|-----------|--------|\\n| 468 | 4800 | 0 | |\\n| 468 | 23000 | 15 | |\\n| 468 | 33000 | 25 | |\\n| 466 | 6340 | 0 | |\\n| 466 | 24000 | 15 | |\\n| 466 | 33000 | 25 | |\\n| 465 | 9870 | 0 | Ti-O |\\n| 465 | 26000 | 15 | Ti–O |\\n| 465 | 33000 | 25 | |\\n| 462 | 5300 | 0 | |\\n| 462 | 12000 | 15 | |\\n| 462 | 33000 | 25 | |\\n| 460 | 5600 | 0 | |\\n| 460 | 24000 | 15 | |\\n| 460 | 33000 | 25 | |\\n| 459 | 21000 | 0 | Ti–O |\\n| 459 | 32000| 15 | Ti–O |\\n| 459 | 33000 | 25 | |\\n| 456 | 2800 | 0 | |\\n| 456 | 22000 | 15 | |\\n| 456 | 33000 | 25 | |\\n| 454 | 3000 | 0 | |\\n| 454 | 21000 | 15 | |\\n| 454 | 33000 | 25 | |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Counts (a.u.) | Cycles | Peak |\\n|---------------------|---------------|-----------|--------|\\n| 468 | 4800 | 0 | |\\n| 468 | 23000 | 15 | |\\n| 468 | 33000 | 25 | |\\n| 466 | 6340 | 0 | |\\n| 466 | 24000 | 15 | |\\n| 466 | 33000 | 25 | |\\n| 465 | 9870 | 0 | Ti-O |\\n| 465 | 26000 | 15 | Ti–O |\\n| 465 | 33000 | 25 | |\\n| 462 | 5300 | 0 | |\\n| 462 | 12000 | 15 | |\\n| 462 | 33000 | 25 | |\\n| 460 | 5600 | 0 | |\\n| 460 | 24000 | 15 | |\\n| 460 | 33000 | 25 | |\\n| 459 | 21000 | 0 | Ti–O |\\n| 459 | 32000| 15 | Ti–O |\\n| 459 | 33000 | 25 | |\\n| 456 | 2800 | 0 | |\\n| 456 | 22000 | 15 | |\\n| 456 | 33000 | 25 | |\\n| 454 | 3000 | 0 | |\\n| 454 | 21000 | 15 | |\\n| 454 | 33000 | 25 | |\"},{\"panel_id\":\"c\",\"text\":\"| Binding Energy (eV) | Counts (a.u.) | Cycles | Peak |\\n|---------------------|---------------|-----------|--------|\\n| 42 | 465 | 0 | |\\n| 42 | 2500 | 15 | |\\n| 42 | 5000 | 25 | |\\n| 40 |620 | 0 | |\\n| 40 |2600 | 15 | |\\n| 40| 5000 | 25 | |\\n| 38 | 1500 | 0 | |\\n| 38 | 5000 | 15 | W–O |\\n| 38 | 5500 | 25 | W–O |\\n| 37 |1900 | 0 | Ti-O |\\n| 37 | 4200 | 15 | |\\n| 37 | 5300 | 25 | |\\n| 36 |850 | 0 | |\\n| 36 | 4900 | 15 | W–O |\\n| 36 | 5500 | 25 |W–O |\\n| 34 | 232 | 0 | |\\n| 34 | 2200 | 15 | |\\n| 34 | 5000 | 25 | |\\n| 32 | 192 | 0 | |\\n| 32 | 2000| 15 | |\\n| 32 | 5000 | 25 | |\\n| 30 | 192 | 0 | |\\n| 30 | 2000 | 15 | |\\n| 30 | 5000 | 25 | |\"},{\"panel_id\":\"d\",\"text\":\"| Binding Energy (eV) | Counts (a.u.) | Cycles | Peak |\\n|---------------------|---------------|-----------|--------|\\n| 500 | 8500 | 0 | |\\n| 500| 10500 | 15 | |\\n| 500| 12000 | 25 | |\\n| 495|8700 | 0 | |\\n| 495 |11200 | 15 |Sn-O |\\n| 495| 12100 | 25 | Sn-O |\\n| 490 | 8500 | 0 | |\\n| 490| 10500 | 15 | |\\n| 490 | 12000 | 25 | |\\n| 487 |9000 | 0 | |\\n| 487| 11600 | 15 |Sn-O |\\n| 487| 12200 | 25 |Sn-O |\\n| 485 |9500 | 0 | |\\n| 485 | 10700 | 15 | |\\n| 485 | 11800 | 25 | |\\n| 480 | 9000 | 0 | |\\n| 480| 10600 | 15 | |\\n| 480| 11800 | 25 | |\\n| 475 | 9200 | 0 | |\\n| 475 | 10500| 15 | |\\n| 475 | 11800 | 25 | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Near-Zero Etch Rate. The fact that the Ti–O peak intensity remains high (comparable to the starting surface) confirms that the TiO₂ film is intact. The WF₆/Sn(acac)₂ chemistry is failing to volatilize the titanium, unlike the successful WF₆/BCl₃ process.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Ti–O bond signal (Ti 2p) decreases significantly with cycles, indicating consumption of the TiO₂ network. It is replaced by Ti–F bonds (seen in the Ti 2p shift and F 1s growth) and a W–O–F layer (W 4f), confirming a fluorination and tungsten-exchange reaction.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Sn(acac)₂ cycle leaves a Sn–O residue (Sn 3d signal), indicating potential tin contamination. The BCl₃ cycle likely produces more volatile byproducts (e.g., TiCl₄), offering a cleaner etch but may require different thermodynamic drivers.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The residual tin contamination would introduce electrically active defects at the critical spacer interface, degrading transistor performance and reliability. A cleaner co-reactant like BCl₃ is preferred.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_9_figure_1.jpg","caption":"Figure 1. (a) XRR measurements of $\\mathrm{In}_{0.53}\\mathrm{Ga}_{0.47}\\mathrm{As}$ film before and after 200 cycles of sequential HF and TMA exposures at 250 and $300^{\\circ}\\mathrm{C}$ , respectively. No etching is observed. (b) XRR measurements before and after the three-step sequence with the addition of $\\mathrm{O}_3$ oxidation before each HF/TMA or HF/DMAC sequence, at $250^{\\circ}\\mathrm{C}$ for 200 cycles each. Formation of oxides is observed in both cases, whereas etching happens only for the $\\mathrm{O}_3 / \\mathrm{HF}$ DMAC process. (c) XRR before and after the HF/DMAC process performed at $250^{\\circ}\\mathrm{C}$ for 200 and 400 cycles, without an oxidation step. The average etching rate is $0.1\\mathrm{A / cycle}$ . (d) Prepared reaction mechanism of InGaAs thermal ALE. Each cycle consists of a fluorination reaction using HF and a ligand-exchange reaction using $\\mathrm{AlCl(CH_3)_2}$ (DMAC). Volatile reaction byproducts are purged away between each step.","id":"train/atomic-layer-etching/experimental-usecase/9/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/9/figure_1","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/In Situ Thermal Atomic Layer Etching for Sub5 nm InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1153,"height":791,"image_format":"jpeg","image_sha256":"6ac4ffeaec775a0b126494051ee5043911406d0cc5c18646b07e22d89fccfe92","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":772,"y":5,"width":372,"height":335},{"panel_id":"b","x":405,"y":0,"width":372,"height":344},{"panel_id":"a","x":3,"y":-3,"width":364,"height":324},{"panel_id":"d","x":12,"y":375,"width":1127,"height":381}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multi spectra chart showing x-ray reflectivity measurements during the course of various ALE process steps.\"},{\"panel_id\":\"b\",\"text\":\"Multi spectra chart showing x-ray reflectivity measurements during the course of various ALE process steps.\"},{\"panel_id\":\"c\",\"text\":\"Multi spectra chart showing x-ray reflectivity measurements during the course of various ALE process steps.\"},{\"panel_id\":\"d\",\"text\":\"The InGaAs thermal ALE process is represented by the proposed ALE reaction mechanism which includes a fluorination and ligand exchange step.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Condition | Temperature | Density edge intensity |\\n|-------------|-------------|------------------------|\\n| Pristine | — | 10^8 |\\n| HF/TMA | 250°C | 10^6 |\\n| HF/TMA | 300°C |10^4 |\"},{\"panel_id\":\"b\",\"text\":\"| Condition | Peak intensity |\\n|-----------------|----------------------|\\n| Pristine | 10^8 |\\n| O₃/HF/TMA | 10^6 |\\n| O₃/HF/DMAC | 10^4 |\"},{\"panel_id\":\"c\",\"text\":\"| Condition | Peak Intensity |\\n|-----------------|----------------------|\\n| Pristine | 10^8 |\\n| ~19 Å | 10^6 |\\n|~22 Å | 10^4 |\"},{\"panel_id\":\"d\",\"text\":\"| Step | Description |\\n|------------------|----------------------------------------------|\\n| Cycle N | Start with InGaAs |\\n| HF Treatment | Removes native oxides |\\n| Fluorination | Forms InF₃ & GaF₃, releases AsH₃ |\\n| Ligand Exchange | AlCl(CH₃)₂ replaces fluorides |\\n| Cycle N+1 | Repeats process |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. After 200 cycles, The InGaAs film thickness was decreased by 19 Å \\n2. After another 200 cycles, a total of 400 cycles, an additional 22 Å thickness reduced\\n3. Average etch rate over 400 cycles ~0.1 Å/cycle.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ozone forms oxides, such as In2O3 and Ga2O3, on the InGaAs film. Fluorination of oxides such as In2O3 and Ga2O3, which form InF3 and GaF3, respectively, is more favorable than fluorination of metal arsenides such as InAs and GaAs. Therefore an oxidation step using ozone (O3) before HF/TMA favours etching.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"DMAC can provide two different ligands, CH3 and Cl, for the ligand-exchange reaction while TMA can only provide CH3 for ligand exchange reaction and is not sufficient for InGaAs ALE.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_2_fig_2.jpg","caption":"Fig. 2. The reaction of 4 $\\mathbb{F}_2$ molecules initially in the gas phase with the $\\mathrm{MoS_2}$ surface at $100\\mathrm{K}$ a) variation of the $\\Xi$ coordinate of the center of mass (CM) of $\\mathbb{F}_2$ molecule during simulation time the inset shows the initial structure with the $\\mathbb{F}_2$ molecules in the vacuum region); b) F-F distance as a function of simulation time for each of the four $\\mathbb{F}_2$ molecules; c) side view of the surface structure after $5\\mathrm{ps}$ d) total energy profile vs simulation time.","id":"train/atomic-layer-etching/simulation-usecase/2/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/2/fig_2","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/Ab-initio molecular dynamics simulations of the reactivity of MoS2 towards F2 molecules.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1117,"height":863,"image_format":"jpeg","image_sha256":"50fe1127d989881fb266b6a67532fefed9a907d2f2dd614d8c3d4237da23252f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":62,"width":522,"height":364},{"panel_id":"b","x":590,"y":122,"width":527,"height":192},{"panel_id":"c","x":8,"y":497,"width":524,"height":366},{"panel_id":"d","x":577,"y":506,"width":531,"height":357}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_2_fig_5.jpg","caption":"Fig. 5. a) Total energy profiles upon increasing the temperature for simulations started with an initial configuration having 24 SF groups within the unit cell (inset). Trajectories of F atoms on the surface plane at b) $100\\mathrm{K}$ , c) $300\\mathrm{K}$ , d) $500\\mathrm{K}$ and e) $1000\\mathrm{K}$ . f) Final surface composition after 5 ps of simulation time at $1000\\mathrm{K}$ , having 10 SF groups and $7\\mathrm{SF}_2$ groups.","id":"train/atomic-layer-etching/simulation-usecase/2/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/2/fig_5","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/Ab-initio molecular dynamics simulations of the reactivity of MoS2 towards F2 molecules.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":652,"height":1392,"image_format":"jpeg","image_sha256":"5e7b7f9fa8db74292a430b6a6f8920b0e432dfe90e60e74ffb5009d9d7ca9d68","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"d","x":6,"y":798,"width":321,"height":281},{"panel_id":"b","x":3,"y":514,"width":324,"height":275},{"panel_id":"c","x":333,"y":508,"width":321,"height":278},{"panel_id":"e","x":336,"y":798,"width":312,"height":281},{"panel_id":"f","x":138,"y":1102,"width":384,"height":283},{"panel_id":"a","x":9,"y":46,"width":636,"height":447}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the energy change over time at different temperatures.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the trajectory of the F atoms on the surface plane at 100 K.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the trajectory of the F atoms on the surface plane at 300 K.\"},{\"panel_id\":\"d\",\"text\":\"The figure shows the trajectory of the F atoms on the surface plane at 500 K.\"},{\"panel_id\":\"e\",\"text\":\"The figure shows the trajectory of the F atoms on the surface plane at 1000 K.\"},{\"panel_id\":\"f\",\"text\":\"The figure shows the final surface composition.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time / ps | Energy / eV |\\n|---|---|\\n| 0.0 | 2.0 |\\n| 5.0 | 0.0 |\\n| 10.0 | 5.0 |\\n| 15.0 | 8.0 |\\n| 20.0 | 15.0 |\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"How many groups are present in the unit cell?\",\"answer_type\":\"Factoid\",\"answer\":\"24 SF groups in the unit cell.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"How does the energy change over the time?\",\"answer_type\":\"Factoid\",\"answer\":\"As the simulation time increases, so does the energy of the system.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"At what temperature is the system's energy higher?\",\"answer_type\":\"Factoid\",\"answer\":\"At 1000 K.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"Why does the energy of the system decrease at 300 K?\",\"answer_type\":\"Factoid\",\"answer\":\"The decrease in energy is due to the formation of two SF2 groups.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_2_fig_8.jpg","caption":"Fig. 8. a) Energy profiles for AIMD simulations performed at $500$ , $1000$ , and $1500\\mathrm{K}$ for a surface with a $125\\%$ coverage of $\\mathrm{F}$ atoms. b) Snapshots at different simulation times first showing the desorption of $\\mathrm{SF}_3$ and $\\mathrm{SF}_4$ molecules and then the desorption of $\\mathrm{MoF}_6$ at $21.903\\mathrm{ps}$ . Gas-phase molecules are removed from the top views.","id":"train/atomic-layer-etching/simulation-usecase/2/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/2/fig_8","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/Ab-initio molecular dynamics simulations of the reactivity of MoS2 towards F2 molecules.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":650,"height":1664,"image_format":"jpeg","image_sha256":"c186b7e689c36534b2b6150aec710f5a7edd60e90270439480beeb1015b81704","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":48,"width":639,"height":416},{"panel_id":"b","x":10,"y":488,"width":639,"height":1167}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_13.jpg","caption":"Figure 13. Mass spectrometry scans for $\\mathrm{TiF}_4^+$ , $\\mathrm{TiF}_3^+$ , $\\mathrm{TiF}_2^+$ , $\\mathrm{TiF}^+$ , and $\\mathrm{Ti}^+$ during an HF exposure lasting $2\\mathrm{min}$ . All $\\mathrm{TiF}_x^+$ species rise and fall with the HF exposure.","id":"train/atomic-layer-etching/simulation-usecase/20/figure_13","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_13","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":661,"height":489,"image_format":"jpeg","image_sha256":"c378813578ce522d321f4c85ce358fd7fdd26e233efc6d0c46cfbc1f485294d7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":655,"height":484}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows time-resolved mass spectrometry data for various titanium fluoride ion fragments (Ti⁺, TiF⁺, TiF₂⁺, TiF₃⁺, TiF₄⁺) during a 2-minute HF exposure on a sample at 300°C. All TiFₓ⁺ signals rise and fall synchronously with the HF pulse, confirming their origin as volatile products of the etching reaction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Mass (m/z) | Intensity (mV) | |\\n|--------|---------|---|\\n| 7 | -0.4 | TiF4+ |\\n| 7 | 4.5 | TiF2+ |\\n| 7 | 6.9 | Ti+ |\\n| 7 | 11.0 | TiF3+ |\\n| 7 | 107.4| TiF+ |\\n| 8 | 1.2 | TiF4+ |\\n| 8 | 3.2 | TiF2+ |\\n| 8 | 5.7 | Ti+ |\\n| 8 | 11.4 | TiF3+ |\\n| 8 | 106.2| TiF+ |\\n| 8.3 | 0.8 | TiF4+ |\\n| 8.3 | 5.3 | TiF2+ |\\n| 8.3 | 9.0 | Ti+ |\\n| 8.3 | 13.1 | TiF3+ |\\n| 8.3 | 158.2| TiF+ |\\n| 9 | 0.8 | TiF4+ |\\n| 9 | 21.7 | TiF2+ |\\n| 9 | 38.9 | Ti+ |\\n| 9 | 115.6| TiF3+ |\\n| 9 | 175.0| TiF+ |\\n| 10 | 0.4 | TiF4+ |\\n| 10 | 24.5 | TiF2+ |\\n| 10 | 30.3 | Ti+ |\\n| 10 | 116.8| TiF3+ |\\n| 10 | 173.8| TiF+ |\\n| 10.3 | 0.8 | TiF4+ |\\n| 10.3 | 15.1 | TiF2+ |\\n| 10.3 | 18.0 | Ti+ |\\n| 10.3 | 45.0 | TiF3+ |\\n| 10.3 | 157.0| TiF+ |\\n| 11 | 0.4 | TiF4+ |\\n| 11 | 5.7 | TiF2+ |\\n| 11 | 5.3 | Ti+ |\\n| 11 | 17.6 | TiF3+ |\\n| 11 | 108.6| TiF+ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Immediate Response / No Incubation. The TiF₃⁺ signal rises sharply almost simultaneously with the start of the HF exposure at ~8.3 minutes, indicating that the etching reaction begins immediately upon gas contact without needing an induction time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thermal HF process is fundamentally limited for anisotropic etching. It produces isotropic, spontaneous reactions and volatile products on all exposed surfaces. Ion-assisted etching directs energy vertically, allowing directional removal, which the purely chemical, isotropic thermal process cannot achieve.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This indicates the gas-phase etch products contain a mixture of titanium fluoride species (TiF, TiF₂, TiF₃, TiF₄). These fragments likely originate from the cracking of the primary volatile product, TiF₄(g), in the mass spectrometer's ionizer, showing the reaction pathway leads to fully fluorinated titanium.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This provides a direct, real-time endpoint detection method. The simultaneous rise and fall of these specific signals act as a fingerprint for the TiO₂ etching reaction, allowing tool operators to precisely monitor process start, stability, and completion to ensure consistent results.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_7.jpg","caption":"Figure 7. FTIR absorbance during $\\mathrm{TiO_2}$ ALD on silicon nanoparticles at $200^{\\circ}\\mathrm{C}$ versus number of ALD cycles using $\\mathrm{TiCl_4}$ and $\\mathrm{H}_2\\mathrm{O}$ as the reactants.","id":"train/atomic-layer-etching/simulation-usecase/20/figure_7","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_7","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":655,"height":553,"image_format":"jpeg","image_sha256":"6128b702483d00c73bb542aeb461228009fa3247f02da780e3aa7a3cf86df81b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":650,"height":545}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The spectral chart represents the Infra red absorbance values ofTiO₂ at 200°C. The graph is represented with various ALE cycles . These FTIR spectra were referenced to the initial TiO ,. The wavelength range used here is 400–1400 cm⁻¹\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumbers (cm⁻¹) | Absorbance | No of cycles |\\n|--------|---------|---|\\n| 1397 | 0.00 | 6 |\\n| 1397 | 0.00 | 12 |\\n| 1397 | 0.00 | 18 |\\n| 1397 | 0.00 | 24 |\\n| 1397 | 0.00 | 30 |\\n| 1397 | 0.00 | 36 |\\n| 1278 | 0.00 | 6 |\\n| 1278 | 0.00 | 12 |\\n| 1278 | 0.00 | 18 |\\n| 1278 | 0.00 | 24 |\\n| 1278 | 0.00 | 30 |\\n| 1278 | 0.00 | 36 |\\n| 1247 | 0.01 | 6 |\\n| 1247 | 0.01 | 12 |\\n| 1247 | 0.01 | 18 |\\n| 1247 | 0.02 | 24 |\\n| 1247 | 0.02 | 30 |\\n| 1247 | 0.02 | 36 |\\n| 1208 | 0.05 | 6 |\\n| 1208 | 0.08 | 12 |\\n| 1208 | 0.10 | 18 |\\n| 1208 | 0.11 | 24 |\\n| 1208 | 0.11 | 30 |\\n| 1208 | 0.12 | 36 |\\n| 1175 | 0.02 | 6 |\\n| 1175 | 0.03 | 12 |\\n| 1175 | 0.02 | 18 |\\n| 1175 | 0.03 | 24 |\\n| 1175 | 0.03 | 30 |\\n| 1175 | 0.03 | 36 |\\n| 1099 | 0.02 | 6 |\\n| 1099 | 0.03 | 12 |\\n| 1099 | 0.04 | 18 |\\n| 1099 | 0.04 | 24 |\\n| 1099 | 0.04 | 30 |\\n| 1099 | 0.04 | 36 |\\n| 1076 | 0.05 | 6 |\\n| 1076 | 0.07 | 12 |\\n| 1076 | 0.08 | 18 |\\n| 1076 | 0.08 | 24 |\\n| 1076 | 0.08 | 30 |\\n| 1076 | 0.09 | 36 |\\n| 1046 | 0.09 | 6 |\\n| 1046 | 0.11 | 12 |\\n| 1046 | 0.12 | 18 |\\n| 1046 | 0.13 | 24 |\\n| 1046 | 0.13 | 30 |\\n| 1046 | 0.13 | 36 |\\n| 993 | 0.06 | 6 |\\n| 993 | 0.08 | 12 |\\n| 993 | 0.08 | 18 |\\n| 993 | 0.09 | 24 |\\n| 993 | 0.10 | 30 |\\n| 993 | 0.10 | 36 |\\n| 982 | 0.04 | 6 |\\n| 982 | 0.05 | 12 |\\n| 982 | 0.06 | 18 |\\n| 982 | 0.07 | 24 |\\n| 982 | 0.08 | 30 |\\n| 982 | 0.08 | 36 |\\n| 924 | 0.07 | 6 |\\n| 924 | 0.09 | 12 |\\n| 924 | 0.11 | 18 |\\n| 924 | 0.12 | 24 |\\n| 924 | 0.14 | 30 |\\n| 924 | 0.15 | 36 |\\n| 885 | 0.02 | 6 |\\n| 885 | 0.04 | 12 |\\n| 885 | 0.06 | 18 |\\n| 885 | 0.07 | 24 |\\n| 885 | 0.09 | 30 |\\n| 885 | 0.10 | 36 |\\n| 818 | 0.04 | 6 |\\n| 818 | 0.08 | 12 |\\n| 818 | 0.11 | 18 |\\n| 818 | 0.16 | 24 |\\n| 818 | 0.20 | 30 |\\n| 818 | 0.23 | 36 |\\n| 730 | 0.06 | 6 |\\n| 730 | 0.11 | 12 |\\n| 730 | 0.16 | 18 |\\n| 730 | 0.23 | 24 |\\n| 730 | 0.31 | 30 |\\n| 730 | 0.36 | 36 |\\n| 670 | 0.06 | 6 |\\n| 670 | 0.11 | 12 |\\n| 670 | 0.16 | 18 |\\n| 670 | 0.22 | 24 |\\n| 670 | 0.28 | 30 |\\n| 670 | 0.33 | 36 |\\n| 598 | 0.04 | 6 |\\n| 598 | 0.08 | 12 |\\n| 598 | 0.11 | 18 |\\n| 598 | 0.15 | 24 |\\n| 598 | 0.20 | 30 |\\n| 598 | 0.23 | 36 |\\n| 473 | 0.04 | 6 |\\n| 473 | 0.06 | 12 |\\n| 473 | 0.08 | 18 |\\n| 473 | 0.10 | 24 |\\n| 473 | 0.12 | 30 |\\n| 473 | 0.13 | 36 |\\n| 400 | 0.04 | 6 |\\n| 400 | 0.05 | 12 |\\n| 400 | 0.06 | 18 |\\n| 400 | 0.07 | 24 |\\n| 400 | 0.09 | 30 |\\n| 400 | 0.09 | 36 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The cycle is: 1) TiCl₄ pulse, 2) Purge, 3) H₂O pulse, 4) Purge. The 200°C temperature provides sufficient thermal energy for the ligand-exchange reactions while avoiding excessive precursor decomposition.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, 200°C is too high for most polymers. A lower-temperature alternative is plasma-enhanced ALD (PEALD) using an O₂ plasma, which can deposit TiO₂ below 100°C at the trade-off of potential surface damage.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Ti-O-Si peak grows with increasing cycles, confirming the formation of a chemically bonded TiO₂ film on the SiO₂/Si substrate. This indicates successful nucleation and steady, layer-by-layer film growth.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The strong interfacial bonding and layer-by-layer growth from ALD ensure a durable, adherent, and uniform TiO₂ film, making it suitable for scratch-resistant and anti-reflective optical coatings.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_8.jpg","caption":"Figure 8. FTIR difference spectrum for the first HF exposure on $\\mathrm{TiO_2}$ . Difference spectrum was obtained using the FTIR absorbance spectrum for $\\mathrm{TiO_2}$ ALD after 36 cycles as a reference. Absorbance for the $\\mathrm{TiO_2}$ ALD film after 36 cycles is also shown for comparison","id":"train/atomic-layer-etching/simulation-usecase/20/figure_8","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_8","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":661,"height":494,"image_format":"jpeg","image_sha256":"c4dec75440e7c2148aacdfd3b6f8eda38ba728ad1098225452cf9d26bf1ea43c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":655,"height":487}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares the surface response from the first HF exposure (blue difference spectrum) with the bulk TiO₂ absorbance (red ALD envelope). A Ti–F stretching feature at ~750–777 cm⁻¹ in the blue curve confirms surface fluorination, while its overlap with the Ti–O/Ti–O–Ti modes in the red curve indicates similar vibrational frequencies for surface and bulk bonds.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance | |\\n|------------------|------------|--|\\n| 1245 | 0.01 | 1st HF Exposure |\\n| 1208 | 0.01 | 1st HF Exposure |\\n| 1180 | 0.04 | 1st HF Exposure |\\n| 1002 | 0.03 | 1st HF Exposure |\\n| 947 | 0.03 | 1st HF Exposure |\\n| 923 | 0.02 | 1st HF Exposure |\\n| 871 | 0.07 | 1st HF Exposure |\\n| 821 | 0.12 | 1st HF Exposure |\\n| 783 | 0.17 | 1st HF Exposure |\\n| 757 | 0.08 | 1st HF Exposure |\\n| 717 | 0.17 | 1st HF Exposure |\\n| 694 | 0.16 | 1st HF Exposure |\\n| 663 | 0.13 | 1st HF Exposure |\\n| 586 | 0.08 | 1st HF Exposure |\\n| 518 | 0.04 | 1st HF Exposure |\\n| 511 | 0.07 | 1st HF Exposure |\\n| 508 | 0.04 | 1st HF Exposure |\\n| 506 | 0.06 | 1st HF Exposure |\\n| 485 | 0.05 | 1st HF Exposure |\\n| 446 | 0.03 | 1st HF Exposure |\\n| 400 | 0.02 | TiO2 ALD Envelope |\\n| 473 | 0.06 | TiO2 ALD Envelope |\\n| 568 | 0.10 | TiO2 ALD Envelope |\\n| 647 | 0.15 | TiO2 ALD Envelope |\\n| 719 | 0.19 | TiO2 ALD Envelope |\\n| 734 | 0.19 | TiO2 ALD Envelope |\\n| 764 | 0.16 | TiO2 ALD Envelope |\\n| 824 | 0.10 | TiO2 ALD Envelope |\\n| 879 | 0.04 | TiO2 ALD Envelope |\\n| 926 | 0.04 | TiO2 ALD Envelope |\\n| 987 | 0.01 | TiO2 ALD Envelope |\\n| 1034 | 0.01 | TiO2 ALD Envelope |\\n| 1071 | 0.01 | TiO2 ALD Envelope |\\n| 1194 | 0.01 | TiO2 ALD Envelope |\\n| 1209 | 0.02 | TiO2 ALD Envelope |\\n| 1247 | 0.00 | TiO2 ALD Envelope |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Spectrum A (Sample): The TiO₂ film after the 1st HF exposure.\\n\\nSpectrum B (Reference): The pristine TiO₂ film after 36 ALD cycles (but before any HF exposure).\\n\\nThe difference spectrum is the result of subtracting the Reference from the Sample to isolate only the changes (Ti-F formation).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The self-limiting gas-phase HF exposure is necessary. A wet HF etch is aggressive, isotropic, and non-self-limiting, leading to uncontrollable bulk etching and roughness. The gas-phase process at 280°C can be tuned to saturate at a monolayer-level reaction, enabling precise surface passivation without compromising the underlying film integrity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface composition changes from titanium oxide (Ti-O) to titanium oxyfluoride or fluoride (Ti-F). This substitution significantly increases the surface's chemical stability against re-oxidation or hydrolysis, as the strong Ti-F bond is more resistant to attack by water or oxygen compared to Ti-O bonds.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the fluorinated layer can serve as a well-defined, chemically stable interface. The controlled replacement of O with F creates a dipole layer that could modulate electron injection barriers in a device, while the stability improves reliability by preventing interfacial degradation over time.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_9.jpg","caption":"Figure 9. FTIR difference spectra after 10 sequential HF exposures at $280^{\\circ}C$ on $\\mathrm{TiO_2}$ ALD films. Absorbance feature at $777~\\mathrm{cm^{-1}}$ is assigned to $\\mathrm{Ti - F}$ stretching vibration.","id":"train/atomic-layer-etching/simulation-usecase/20/figure_9","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_9","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":669,"height":500,"image_format":"jpeg","image_sha256":"b40e9dce64076bb63148d7adc3c3c677597d286228b5c1ab4370d506766272ed","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":664,"height":495}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure displays the infrared difference spectra of a Titanium Dioxide (TiO₂) film reacting with Hydrofluoric Acid (HF) at 280 °C. The data tracks the evolution of surface chemistry over 10 sequential exposures. The key finding is the progressive growth of a negative absorbance feature (valley) at 777 cm⁻¹, which identifies as the Ti–F stretching vibration, confirming that HF is successfully fluorinating the oxide surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance | HF Exposures |\\n|------------------|------------|------|\\n| 1199 | -0.001 | 1 |\\n| 1199 | -0.004 | 2 |\\n| 1199 | -0.005 | 3 |\\n| 1199 | -0.005 | 4 |\\n| 1199 | -0.006 | 5 |\\n| 1199 | -0.006 | 6 |\\n| 1199 | -0.006 | 7 |\\n| 1199 | -0.005 | 8 |\\n| 1199 | -0.007 | 9 |\\n| 1199 | -0.006 | 10 |\\n| 928 | -0.001 | 1 |\\n| 928 | -0.005 | 2 |\\n| 928 | -0.007 | 3 |\\n| 928 | -0.007 | 4 |\\n| 928 | -0.008 | 5 |\\n| 928 | -0.012 | 6 |\\n| 928 | -0.013 | 7 |\\n| 928 | -0.013 | 8 |\\n| 928 | -0.015 | 9 |\\n| 928 | -0.016 | 10 |\\n| 877 | -0.008 | 1 |\\n| 877 | -0.012 | 2 |\\n| 877 | -0.015 | 3 |\\n| 877 | -0.017 | 4 |\\n| 877 | -0.019 | 5 |\\n| 877 | -0.023 | 6 |\\n| 877 | -0.026 | 7 |\\n| 877 | -0.026 | 8 |\\n| 877 | -0.029 | 9 |\\n| 877 | -0.031 | 10 |\\n| 830 | -0.012 | 1 |\\n| 830 | -0.022 | 2 |\\n| 830 | -0.028 | 3 |\\n| 830 | -0.033 | 4 |\\n| 830 | -0.037 | 5 |\\n| 830 | -0.046 | 6 |\\n| 830 | -0.050 | 7 |\\n| 830 | -0.050 | 8 |\\n| 830 | -0.055 | 9 |\\n| 830 | -0.059 | 10 |\\n| 795 | -0.019 | 1 |\\n| 795 | -0.032 | 2 |\\n| 795 | -0.041 | 3 |\\n| 795 | -0.048 | 4 |\\n| 795 | -0.054 | 5 |\\n| 795 | -0.064 | 6 |\\n| 795 | -0.069 | 7 |\\n| 795 | -0.073 | 8 |\\n| 795 | -0.078 | 9 |\\n| 795 | -0.083 | 10 |\\n| 781 | -0.020 | 1 |\\n| 781 | -0.034 | 2 |\\n| 781 | -0.043 | 3 |\\n| 781 | -0.050 | 4 |\\n| 781 | -0.057 | 5 |\\n| 781 | -0.066 | 6 |\\n| 781 | -0.072 | 7 |\\n| 781 | -0.076 | 8 |\\n| 781 | -0.082 | 9 |\\n| 781 | -0.088 | 10 |\\n| 766 | -0.012 | 1 |\\n| 766 | -0.027 | 2 |\\n| 766 | -0.037 | 3 |\\n| 766 | -0.044 | 4 |\\n| 766 | -0.051 | 5 |\\n| 766 | -0.060 | 6 |\\n| 766 | -0.066 | 7 |\\n| 766 | -0.070 | 8 |\\n| 766 | -0.076 | 9 |\\n| 766 | -0.081 | 10 |\\n| 756 | -0.010 | 1 |\\n| 756 | -0.024 | 2 |\\n| 756 | -0.035 | 3 |\\n| 756 | -0.042 | 4 |\\n| 756 | -0.050 | 5 |\\n| 756 | -0.060 | 6 |\\n| 756 | -0.067 | 7 |\\n| 756 | -0.070 | 8 |\\n| 756 | -0.077 | 9 |\\n| 756 | -0.082 | 10 |\\n| 733 | -0.019 | 1 |\\n| 733 | -0.034 | 2 |\\n| 733 | -0.045 | 3 |\\n| 733 | -0.052 | 4 |\\n| 733 | -0.060 | 5 |\\n| 733 | -0.070 | 6 |\\n| 733 | -0.077 | 7 |\\n| 733 | -0.081 | 8 |\\n| 733 | -0.087 | 9 |\\n| 733 | -0.093 | 10 |\\n| 716 | -0.020 | 1 |\\n| 716 | -0.036 | 2 |\\n| 716 | -0.046 | 3 |\\n| 716 | -0.053 | 4 |\\n| 716 | -0.061 | 5 |\\n| 716 | -0.071 | 6 |\\n| 716 | -0.078 | 7 |\\n| 716 | -0.080 | 8 |\\n| 716 | -0.087 | 9 |\\n| 716 | -0.092 | 10 |\\n| 660 | -0.014 | 1 |\\n| 660 | -0.028 | 2 |\\n| 660 | -0.035 | 3 |\\n| 660 | -0.039 | 4 |\\n| 660 | -0.045 | 5 |\\n| 660 | -0.052 | 6 |\\n| 660 | -0.059 | 7 |\\n| 660 | -0.061 | 8 |\\n| 660 | -0.064 | 9 |\\n| 660 | -0.069 | 10 |\\n| 608 | -0.011 | 1 |\\n| 608 | -0.020 | 2 |\\n| 608 | -0.026 | 3 |\\n| 608 | -0.029 | 4 |\\n| 608 | -0.033 | 5 |\\n| 608 | -0.037 | 6 |\\n| 608 | -0.039 | 7 |\\n| 608 | -0.041 | 8 |\\n| 608 | -0.043 | 9 |\\n| 608 | -0.044 | 10 |\\n| 561 | -0.007 | 1 |\\n| 561 | -0.015 | 2 |\\n| 561 | -0.018 | 3 |\\n| 561 | -0.019 | 4 |\\n| 561 | -0.020 | 5 |\\n| 561 | -0.023 | 6 |\\n| 561 | -0.024 | 7 |\\n| 561 | -0.025 | 8 |\\n| 561 | -0.026 | 9 |\\n| 561 | -0.026 | 10 |\\n| 499 | -0.005 | 1 |\\n| 499 | -0.013 | 2 |\\n| 499 | -0.014 | 3 |\\n| 499 | -0.015 | 4 |\\n| 499 | -0.016 | 5 |\\n| 499 | -0.019 | 6 |\\n| 499 | -0.020 | 7 |\\n| 499 | -0.017 | 8 |\\n| 499 | -0.018 | 9 |\\n| 499 | -0.017 | 10 |\\n| 399 | -0.002 | 1 |\\n| 399 | -0.011 | 2 |\\n| 399 | -0.006 | 3 |\\n| 399 | -0.007 | 4 |\\n| 399 | -0.008 | 5 |\\n| 399 | -0.007 | 6 |\\n| 399 | -0.008 | 7 |\\n| 399 | -0.007 | 8 |\\n| 399 | -0.008 | 9 |\\n| 399 | -0.001 | 10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Temperature: 280°C.\\nReactant: HF (Hydrofluoric Acid).\\nSubstrate: TiO₂ ALD films\\nThe numbers represent the cumulative count of sequential HF exposure pulses performed before that specific spectrum was captured, showing the history of the film's treatment.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thermal HF method is preferable. It offers a purely chemical, isotropic reaction that can be selective to TiO₂. Plasma CF₄, while potentially faster, generates energetic ions and radicals that would likely cause significant damage and non-selective etching of the sensitive organic underlayer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate increases with dose time then saturates. This saturation is caused by the self-limiting surface reaction; once all available surface sites are consumed by the first precursor, additional dose time cannot increase the etch yield of the subsequent complementary reaction.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The well-defined saturation plateaus guarantee a constant etch amount per cycle. By operating within these saturation windows and knowing the etch per cycle, the exact number of cycles needed to remove 2.0 nm can be calculated and executed, enabling atomic-scale precision and excellent wafer-scale uniformity.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_26_fig_3.jpg","caption":"FIG. 3. Changes in the substrate height as functions of the $\\mathsf{Ar}^+$ ion dose during the desorption steps over 6 ALE cycles, obtained from MD simulations. No Cl adsorption step is included in this figure. The dark gray (blue online) curve represents the position of the Cl-adsorbed top surface. The adsorption steps for (a) and (b) were performed under the thin Cl layer deposition conditions and those for (c) and (d) were under the \"thick Cl layer deposition\" conditions. The incident $\\mathsf{Ar}^+$ ion energy in the desorption steps for (a) and (c) is $20\\mathrm{eV}$ and that for (b) and (d) is $50\\mathrm{eV}$ . The vertical axis represents the substrate height (i.e., the position of the top surface), measured from the position of the initial (100) Si surface, denoted by the horizontal dashed line. The horizontal axis is proportional to the $\\mathsf{Ar}^+$ ion dose, whose cycle number is denoted by $C_n$ with $n = 1,\\ldots ,6$ for the $n$ th cycle. The $\\mathsf{Ar}^+$ ion dose in each cycle is $1.88\\times 10^{17} / \\mathrm{cm}^2$ . The light gray (orange online) curve represents the position of the top Si surface subject only to $\\mathsf{Ar}^+$ ion bombardment (i.e., without Cl layer adsorption steps). The dashed vertical lines delineate separate cycles.","id":"train/atomic-layer-etching/simulation-usecase/26/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/26/fig_3","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/Surface damage formation during atomic layer etching of silicon with chlorine adsorption.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1345,"height":1114,"image_format":"jpeg","image_sha256":"9bb831cb407baa4d45d4b66082e6893122bb854174cc6a60cadf0921d0fea59d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":39,"width":637,"height":502},{"panel_id":"b","x":702,"y":39,"width":643,"height":502},{"panel_id":"c","x":8,"y":605,"width":637,"height":509},{"panel_id":"d","x":702,"y":605,"width":643,"height":509}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Line chart showing height changes over cycle number for thin Cl layer deposition with 20 eV Ar⁺ ion for thin Cl layer adsorption\"},{\"panel_id\":\"b\",\"text\":\"Line chart showing height changes over cycle number for thin Cl layer deposition with 50 eV Ar⁺ ion for thin Cl layer adsorption\"},{\"panel_id\":\"c\",\"text\":\"Line chart showing height changes over cycle number for thick Cl layer deposition with 20 eV Ar⁺ ion for thick Cl layer adsorption\"},{\"panel_id\":\"d\",\"text\":\"Line chart showing height changes over cycle number for thick Cl layer deposition with 50 eV Ar⁺ ion for thick Cl layer adsorption\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle Number | Height (Å) with Cl adsorption | Height (Å) with Ar⁺ ion only |\\n|-------------|--------------------------------|--------------------------------|\\n| C1 | +2 | +1 |\\n| C2 | +1 | +0.5 |\\n| C3 | -1 | -0.5 |\\n| C4 | -3 | -1 |\\n| C5 | -4.5 | -2 |\\n| C6 | -6 | -3 |\"},{\"panel_id\":\"b\",\"text\":\"| Cycle Number | Height (Å) with Cl adsorption | Height (Å) with Ar⁺ ion only |\\n|-------------|--------------------------------|--------------------------------|\\n| C1 | -10 | -5 |\\n| C2 | -20 | -10 |\\n| C3 | -30 | -15 |\\n| C4 | -40 | -20 |\\n| C5 | -50 | -25 |\\n| C6 | -60 | -30 |\"},{\"panel_id\":\"c\",\"text\":\"| Cycle Number | Height (Å) with Cl adsorption | Height (Å) with Ar⁺ ion only |\\n|-------------|--------------------------------|--------------------------------|\\n| C1 | +10 | +5 |\\n| C2 | -5 | -2 |\\n| C3 | -10 | -5 |\\n| C4 | -15 | -8 |\\n| C5 | -20 | -10 |\\n| C6 | -25 | -12 |\"},{\"panel_id\":\"d\",\"text\":\"| Cycle Number | Height (Å) with Cl adsorption | Height (Å) with Ar⁺ ion only |\\n|-------------|--------------------------------|--------------------------------|\\n| C1 | 0 | 0 |\\n| C2 | -20 | -10 |\\n| C3 | -40 | -20 |\\n| C4 | -60 | -30 |\\n| C5 | -70 | -35 |\\n| C6 | -80 | -40 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Thick Cl layer deposition \\n, 2. Thin Cl layer deposition\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the thick Cl layer deposition, it is seen that an Si–Cl mixed layer was removed in the very early stage of each desorption step and the etching became essentially due to physical sputtering for the\\nremaining period of the step.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"the etched depth in a single cycle increased initially and became nearly constant in later cycles. This\\nis because Ar+ ion bombardment in the first two cycles roughened the Si surface and created more active sites that can be bonded with Cl atoms in the subsequent adsorption cycles. This process formed a thicker Si–Cl mixed layer that can be more readily removed in the subsequent desorption step than crystalline Si. It is also seen that Ar+ ion bombardment amorphized the surface and increased the volume of the surface region, resulting in a surface higher than the initial crystalline surface.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_3.jpg","caption":"Fig. 3. RDFs calculated from AIMD simulations compared with experimental data: (a) RDF for molten $\\mathrm{Al_{48}O_{72}}$ at $5000\\mathrm{K}$ (solid black lines), averaged over 40 snapshots from the last 2 ps of the AIMD simulation, compared with the RDF obtained by neutron scattering from a liquid alumina film at $2500\\mathrm{K}$ (dashed red line) [29] and the calculated RDF for the initial expanded alpha- $\\mathrm{Al_2O_3}$ (dotted blue lines). (b) RDF for the final quenched amorphous $\\mathrm{Al_{48}O_{72}}$ structure (solid black line), compared with experimental RDFs obtained from total X-ray scattering (dashed blue line) [32] or neutron scattering (dotted red line) [33] of amorphous alumina films.","id":"train/atomic-layer-etching/simulation-usecase/29/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_3","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":697,"height":1108,"image_format":"jpeg","image_sha256":"7e2b1c5d5358a4049540a2075b529b2e66598400c1473ec14a013c929b7a74ce","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":5,"width":685,"height":541},{"panel_id":"b","x":7,"y":567,"width":685,"height":545}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the radial distribution function (RDF) for molten Al48O72, molten Al2O3, and expanded alpha-Al2O3 at the distange range of 0 - 10 Å.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays the radial distribution function (RDF) for amorphous Al48O72, ALD alumina film, and anodized alumina film at the distance range of 1.0 - 3.5 Å.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Species | Distance (Å) | RDF, g(r) |\\n|---|---|---|\\n|Molten Al48O72 Model | 0 | 0 | \\n| Molten Al48O72 Model | 1.8 | 1.79 | \\n| Molten Al48O72 Model| 2.2 | 0.78 | \\n| Molten Al48O72 Model | 2.9 | 1.12 | \\n| Molten Al48O72 Model | 4.0 | 1.04 | \\n| Molten Al48O72 Model | 10 | 1.02 | \\n|Molten Al2O3 in Ref. [29] | 0 | 0 | \\n| Molten Al2O3 in Ref. [29] | 1.7 | 1.97 | \\n| Molten Al2O3 in Ref. [29]| 2.2 | 0.38 | \\n| Molten Al2O3 in Ref. [29] | 2.9 | 1.41 | \\n| Molten Al2O3 in Ref. [29] | 4.0 | 0.94 | \\n| Molten Al2O3 in Ref. [29] | 10 | 1.02 | \\n| Expanded alpha-Al2O3 | 2.1 | 5.16 |\\n| Expanded alpha-Al2O3 | 2.2 | 0.16 |\\n| Expanded alpha-Al2O3 | 2.6 | 1.67 |\\n| Expanded alpha-Al2O3 | 2.8 | 0.12 |\\n| Expanded alpha-Al2O3 | 2.9 | 2.16 |\\n| Expanded alpha-Al2O3 | 3 | 0.57 |\\n| Expanded alpha-Al2O3 | 3.3 | 2.00 |\\n| Expanded alpha-Al2O3 | 3.4 | 0.16 |\\n| Expanded alpha-Al2O3 | 3.4 | 2.78 |\\n| Expanded alpha-Al2O3 | 3.6 | 0.10 |\\n| Expanded alpha-Al2O3 | 3.8 | 1.39 |\\n| Expanded alpha-Al2O3 | 3.9 | 0.27 |\\n| Expanded alpha-Al2O3 | 4 | 3.55 |\\n| Expanded alpha-Al2O3 | 4.3 | 0.14 |\\n| Expanded alpha-Al2O3 | 4.6 | 1.22 |\\n| Expanded alpha-Al2O3 | 4.7 | 0.27 |\\n| Expanded alpha-Al2O3 | 4.9 | 3.69 |\\n| Expanded alpha-Al2O3 | 5.1 | 0.20 |\\n| Expanded alpha-Al2O3 | 5.3 | 4.51 |\\n| Expanded alpha-Al2O3 | 5.5 | 0.31 |\\n| Expanded alpha-Al2O3 | 5.6 | 1.04 |\\n| Expanded alpha-Al2O3 | 5.8 | 0.10 |\\n| Expanded alpha-Al2O3 | 5.9 | 1.20 |\\n| Expanded alpha-Al2O3 | 6.1 | 0.35 |\\n| Expanded alpha-Al2O3 | 6.3 | 1.90 |\\n| Expanded alpha-Al2O3 | 6.4 | 1.00 |\\n| Expanded alpha-Al2O3 | 6.5 | 1.57 |\\n| Expanded alpha-Al2O3 | 6.8 | 0.51 |\\n| Expanded alpha-Al2O3 | 6.9 | 1.35 |\\n| Expanded alpha-Al2O3 | 7.1 | 0.53 |\\n| Expanded alpha-Al2O3 | 7.2 | 1.53 |\\n| Expanded alpha-Al2O3 | 7.3 | 0.47 |\\n| Expanded alpha-Al2O3 | 7.5 | 1.57 |\\n| Expanded alpha-Al2O3 | 7.7 | 1.20 |\\n| Expanded alpha-Al2O3 | 7.8 | 0.63 |\\n| Expanded alpha-Al2O3 | 8 | 2.96 |\\n| Expanded alpha-Al2O3 | 8.6 | 0.55 |\\n| Expanded alpha-Al2O3 | 8.7 | 0.80 |\\n| Expanded alpha-Al2O3 | 9.1 | 2.76 |\\n| Expanded alpha-Al2O3 | 9.2 | 0.63 |\\n| Expanded alpha-Al2O3 | 9.3 | 1.61 |\\n| Expanded alpha-Al2O3 | 9.6 | 0.69 |\\n| Expanded alpha-Al2O3 | 9.9 | 1.69 |\\n| Expanded alpha-Al2O3 | 10 | 1.29 |\"},{\"panel_id\":\"b\",\"text\":\"| Species | Distance (Å) | RDF, g(r) |\\n|---|---|---|\\n| Amorphous Al48O72 | 1.6 | 0 |\\n| Amorphous Al48O72 | 1.8 | 5.1 | \\n| Amorphous Al48O72 | 2.2 | 0.3 | \\n| Amorphous Al48O72 | 2.8 | 1.5 | \\n| Amorphous Al48O72 | 3.1 | 1.0 | \\n| Amorphous Al48O72 | 3.5 | 0.9 |\\n| ALD alumina film [32] | 1.0 | 1.8 |\\n| ALD alumina film [32] | 1.5 | 0.1 |\\n| ALD alumina film [32] | 1.8 | 5.1 |\\n| ALD alumina film [32] | 2.3 | 0.4 |\\n| ALD alumina film [32] | 3.1 | 3.1 |\\n| ALD alumina film [32] | 3.5 | 1.8 |\\n| Anodized alumina film [33] | 1.2 | 0.0 |\\n| Anodized alumina film [33] | 1.3 | 0.3 |\\n| Anodized alumina film [33] | 1.5 | 0.0 |\\n| Anodized alumina film [33] | 1.8 | 5.6 |\\n| Anodized alumina film [33] | 2.8 | 3 |\\n| Anodized alumina film [33] | 3.5 | 0.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Radial distribution function of \\\"Expanded α-Al₂O₃\\\".\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"\\\"Expanded α-Al₂O₃\\\" looks the most crystalline. It shows strong, sharp peaks, which is the kind of structure you expect from an ordered solid. By contrast, the molten alumina curves have much lower peak heights and are closer to \\ng(r)≈1 at larger distances, consistent with a more disordered, liquid-like structure.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ALD alumina film (g(r) > 1).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Anodized alumina film (highest g(r)).\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_11.jpg","caption":"FIG. 11. (Color online) Ion energy distribution for $\\mathrm{Cl}^+$ $\\mathrm{Cl}_2^+$ ,and $\\mathrm{Ar}^+$ in the (a) passivation and (b) ion bombardment phases. Each ion energy distribution is a probability density function for that ion, and is normalized such that integrating the function in energy results in a value of 1 regardless of the total flux of that ion.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_11","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_11","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":578,"height":872,"image_format":"jpeg","image_sha256":"958c9ee09d2df1d27ce2f826c108b27e7b428c12c5b1ec225c3916f9f1367b30","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":459,"width":577,"height":412},{"panel_id":"a","x":2,"y":0,"width":572,"height":419}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the ion energy distribution versus energies for Cl passivation phase\"},{\"panel_id\":\"b\",\"text\":\"The chart illustrates the ion energy distribution during Ar+ ion bombardment phase\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Energy (eV) | Cl₂⁺ | Ar⁺ | Cl⁺ |\\n|-------------|------|-----|-----|\\n| 15 | 0.00 | 0.00| 0.00|\\n| 20 | 0.22 | 0.22| 0.18|\\n| 25 | 0.20 | 0.20| 0.15|\\n| 30 | 0.05 | 0.05| 0.08|\\n| 40 | 0.00 | 0.00| 0.02|\\n| 60 | 0.00 | 0.00| 0.00|\"},{\"panel_id\":\"b\",\"text\":\"| Energy (eV) | Cl₂⁺ | Ar⁺ | Cl⁺ |\\n|-------------|------|-----|-----|\\n| 20 | 0.00 | 0.00| 0.00|\\n| 30 | 0.03 | 0.02| 0.02|\\n| 40 | 0.06 | 0.04| 0.03|\\n| 50 | 0.05 | 0.03| 0.02|\\n| 60 | 0.02 | 0.02| 0.01|\\n| 80 | 0.00 | 0.00| 0.00|\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The resulting fluxes to the wafer are\\n1. 7.8*10^14 /cm2 s for Cl\\n2. 3.9*10^12 /cm2 s for Cl2+\\n3. 9.2*10^13 /cm2 s for Cl+\\n4. 2.3*10^16 /cm2 s for Ar+,\\n with ion energies distributed from 33 eV to 60 eV,\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Each ion energy distribution is a probability density function for that ion, and is normalized such that integrating the function in energy results in a value of 1 regardless of the total flux of that ion.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the ion bombardment phase Ar gas with 100 ppm Cl2 was used to simulate chlorine contamination of the process due to incomplete purging, etch products or desorption from the walls. The total gas flow was 200 sccm at a pressure of 20 mTorr.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A bias of 30V at 10MHz was applied to the wafer, resulting in a DC bias of 8.4V and a plasma potential oscillating between 35V and 49 V.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_5.jpg","caption":"Fig. 5. (Color online) Surface roughness as a function of time. (a) First 25 pulses for $\\Gamma_{i} / \\Gamma_{n} = 0.01$ , $10^{-3}$ , and $10^{-4}$ in the passivation step, showing the transient roughening at early etch times. (b) Subcycle roughening behavior at steady-state (55th pulse) for $\\Gamma_{i} / \\Gamma_{n} = 0.01$ in the passivation phase and $100\\mathrm{ppmCl}_{2}$ in the ion bombardment phase. ALE subcycles are listed at the top, with the passivation phase highlighted with gray in the figure.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_5","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":570,"height":933,"image_format":"jpeg","image_sha256":"d739b78389164aa9994564cc9366e8186b3302ae3fea99406efdd54b4a19cca4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":567,"height":444},{"panel_id":"b","x":4,"y":467,"width":560,"height":462}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the roughness of a surface over time, for different ratios of Γi/Γn.\"},{\"panel_id\":\"b\",\"text\":\"The chart displays the roughness changes over time during specific intervals of CI and Ar+.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Roughness (Γᵢ/Γₙ = 0.01) | Roughness (Γᵢ/Γₙ = 10⁻³) | Roughness (Γᵢ/Γₙ = 10⁻⁴) |\\n|----------|---------------------------|---------------------------|---------------------------|\\n| 0 | 0.5 | 0.5 | 0.5 |\\n| 10 | 1.8 | 1.3 | 0.9 |\\n| 30 | 2.0 | 1.4 | 1.0 |\\n| 60 | 2.0 | 1.4 | 1.0 |\\n| 90 | 2.0 | 1.4 | 1.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Roughness (Γᵢ/Γₙ = 0.01) | Roughness (100 ppm Cl₂) |\\n|----------|---------------------------|---------------------------|\\n| 191 | 1.4 | 1.2 |\\n| 192 | 2.0 | 1.4 |\\n| 193 | 2.1 | 1.5 |\\n| 195 | 1.4 | 1.3 |\\n| 196 | 2.0 | 1.4 |\\n| 198 | 2.1 | 1.5 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The roughening during steady state is similar when compared on the basis of the fluence of ions during the passivation phase. This similarity\\nsuggests that each ion impinging on the etch front during the passivation phase is responsible for some stochastic roughening of the surface. This trend was also recently observed experimentally for very low ion to neutral flux ratios generated in pulsed Cl2 plasmas\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Subcycle roughening behavior at steady-state (55th pulse) for Γᵢ/Γₙ =0.01 in the passivation phase and 100 ppm Cl2 in the ion bombardment phase help understand the roughening behavior during steady sttate\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The cycle averaged steady state roughness are\\n1. 1.8 for Γᵢ/Γₙ =0.02\\n2. 1.6 for Γᵢ/Γₙ= 0.01\\n3. 1.4 for Γᵢ/Γₙ = 10^-3\\n4. 0.9 for Γᵢ/Γₙ = 10^-4\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_10.jpg","caption":"FIG. 10. OES signals for atomic Si (bottom line), SiCl (top line), and $\\mathrm{SiCl_2}$ (middle line) for $80\\mathrm{eVAr^{+}}$ Results are shown for two ALE cycles. The signal for SiCl is multiplied by 10 and the signal for $\\mathrm{SiCl_2}$ is multiplied by 100. The atomic Si signal is modified to account for dissociative excitation of SiCl.","id":"train/atomic-layer-etching/simulation-usecase/6/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_10","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":678,"height":470,"image_format":"jpeg","image_sha256":"ff555e757297a5f7a65a4322ccab7d539b90098348a220a5304b75ac1b3c5a6d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":678,"height":470}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a multiple line chart showing the temporal evolution of product counts for Si, SiCl, and SiCl₂ during a repeated four-step process. Product counts peak during specific steps and return to baseline in others, demonstrating step-dependent product formation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Product Count (arb. units) |\\n|---|---|\\n| 0 | 0 |\\n| 5 | 0 |\\n| 10 | 0 |\\n| 15 | 0 |\\n| 20 | 0 |\\n| 25 | 0 |\\n| 30 | 0 |\\n| 35 | 0 |\\n| 40 | 0 |\\n| 45 | 0 |\\n| 50 | 0 |\\n| 55 | 0 |\\n| 60 | 0 |\\n| 65 | 0 |\\n| 70 | 0 |\\n| 75 | 0 |\\n| 80 | 0 |\\n| 85 | 0 |\\n| 90 | 0 |\\n| 95 | 0 |\\n| 100 | 0 |\\n| 105 | 0 |\\n| 110 | 0 |\\n| 115 | 0 |\\n| 120 | 0 |\\n| 125 | 0 |\\n| 130 | 0 |\\n| 135 | 0 |\\n| 140 | 0 |\\n| 145 | 0 |\\n| 150 | 0 |\\n| 155 | 0 |\\n| 160 | 0 |\\n| 165 | 0 |\\n| 170 | 0 |\\n| 175 | 0 |\\n| 180 | 0 |\\n| 185 | 0 |\\n| 190 | 0 |\\n| 195 | 0 |\\n| 200 | 0 |\\n| 205 | 0 |\\n| 210 | 0 |\\n| 215 | 0 |\\n| 220 | 0 |\\n| 225 | 0 |\\n| 230 | 0 |\\n| 235 | 0 |\\n| 240 | 0 |\\n| 245 | 0 |\\n| 250 | 0 |\\n| 255 | 0 |\\n| 260 | 0 |\\n| 265 | 0 |\\n| 270 | 0 |\\n| 275 | 0 |\\n| 280 | 0 |\\n| 285 | 0 |\\n| 290 | 0 |\\n| 295 | 0 |\\n| 300 | 0 |\\n| 305 | 0 |\\n| 310 | 0 |\\n| 315 | 0 |\\n| 320 | 0 |\\n| 325 | 0 |\\n| 330 | 0 |\\n| 335 | 0 |\\n| 340 | 0 |\\n| 345 | 0 |\\n| 350 | 0 |\\n| 355 | 0 |\\n| 360 | 0 |\\n| 365 | 0 |\\n| 370 | 0 |\\n| 375 | 0 |\\n| 380 | 0 |\\n| 385 | 0 |\\n| 390 | 0 |\\n| 395 | 0 |\\n| 400 | 0 |\\n| 405 | 0 |\\n| 410 | 0 |\\n| 415 | 0 |\\n| 420 | 0 |\\n| 425 | 0 |\\n| 430 | 0 |\\n| 435 | 0 |\\n| 440 | 0 |\\n| 445 | 0 |\\n| 450 | 0 |\\n| 455 | 0 |\\n| 460 | 0 |\\n| 465 | 0 |\\n| 470 | 0 |\\n| 475 | 0 |\\n| 480 | 0 |\\n| 485 | 0 |\\n| 490 | 0 |\\n| 495 | 0 |\\n| 50 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The graph shows a clear cyclic pattern in product count behavior across Steps 1 through 4. During Step 1, all product species Si, SiCl, and SiCl₂ exhibit a sharp increase in signal intensity, indicating a burst of reaction or desorption activity. In Step 2, there is a rapid drop in product count, suggesting quenching of the reaction or a purge phase. Steps 3 and 4 show more stable or gradually shifting product levels, with some fluctuations depending on the species. This four-step cycle repeats consistently, indicating a highly reproducible process sequence likely tied to a pulsed or stepwise etching or deposition protocol.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The process is highly reproducible and each step elicits consistent chemical behaviour, indicating well-controlled plasma/surface interactions.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"To show how the product counts of Si, SiCl, and SiCl₂ evolve during different steps of a cyclic process, indicating their formation and depletion dynamics across time.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"All three species begin to rise sharply, with SiCl₂ showing the highest peak, indicating it is the dominant product during the initial stage.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_11.jpg","caption":"FIG. 11. Si OES modified to account for dissociative excitation of SiCl as a function of time for various $\\mathrm{Ar^{+}}$ energies. Results are shown for two ALE cycles. The top line corresponds to results for $215\\mathrm{eV}$ , the middle line for $80\\mathrm{eV}$ , and the bottom line for $45\\mathrm{eV}$ .","id":"train/atomic-layer-etching/simulation-usecase/6/fig_11","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_11","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":669,"height":458,"image_format":"jpeg","image_sha256":"5e3fe148fedff6a7474d21988874212967d9cb4b8f0470595f99408820f64589","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":458}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a multi-line plot showing product count (in arbitrary units) over time for three different incident electron energies: 45 eV, 80 eV, and 215 eV. Each energy condition produces a distinct response pattern across four repeated steps, with the 215 eV trace showing the highest product count. The signal rises sharply at the beginning of each active phase and drops immediately at the end of each step, highlighting a rapid and reversible product formation tied to process cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | 45 eV | 80 eV | 215 eV |\\n|----------|--------|--------|---------|\\n| 0 | 0 | 0 | 0 |\\n| 1 | ~20k | ~60k | ~180k |\\n| 2 | ~20k | ~60k | ~180k |\\n| 5 | ~20k | ~60k | ~180k |\\n| 6 | 0 | 0 | 0 |\\n| 7 | ~20k | ~60k | ~180k |\\n| 10 | ~20k | ~60k | ~180k |\\n| 12 | 0 | 0 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"215eV\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Signal onset, Signal plateau, Signal drop, Cycle repeat\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure demonstrates that higher electron energies lead to significantly greater product formation, suggesting that tuning energy input can directly enhance process efficiency. For systems like ALD or plasma etching, optimising electron energy could allow for precise control over reaction rates and product yields. Moreover, the sharp responsiveness of the signal to energy application indicates potential for real-time modulation during pulsed processes, improving throughput and selectivity.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_9.jpg","caption":"FIG. 9. OES signals for atomic Si (middle line), SiCl (top line), and $\\mathrm{SiCl_2}$ (bottom line) for $80\\mathrm{eVAr^{+}}$ Results are shown for two ALE cycles. The relative intensities of the emission intensity have been adjusted for clarity and do not correspond to densities, in general. The signal for SiCl is multiplied by 10 and the signal for $\\mathrm{SiCl_2}$ is multiplied by 100. The steps shown correspond to Fig. 2.","id":"train/atomic-layer-etching/simulation-usecase/6/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_9","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":675,"height":466,"image_format":"jpeg","image_sha256":"8765a21dcef053adec604ef60412bf79112b8cb2ab82587fae45597a3d5fbefd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":466}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This line chart displays time-resolved product formation for three species ,Si, SiCl, and SiCl₂, during repeated etching cycles, each consisting of four steps. The signal intensities sharply increase during Step 1 (etchant exposure) and then decay across subsequent steps. SiCl₂ consistently shows the highest intensity, followed by SiCl and then Si, indicating that higher chlorinated etch products dominate during active etching. The periodic recurrence and relative ordering of product counts suggest a reproducible reaction mechanism governed by sequential Cl₂ plasma and ion bombardment steps. The figure captures the cyclic and self-limiting nature of the etching process under controlled ALD/E conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Si (arb. units) | SiCl (arb. units) | SiCl₂ (arb. units) |\\n|----------|------------------|-------------------|---------------------|\\n| 0 | 0 | 0 | 0 |\\n| 1 | 150000 | 200000 | 250000 |\\n| 2 | 100000 | 150000 | 200000 |\\n| 3 | 60000 | 120000 | 180000 |\\n| 4 | 50000 | 100000 | 160000 |\\n| 5 | 0 | 0 | 0 |\\n| 6 | 140000 | 190000 | 240000 |\\n| 7 | 100000 | 150000 | 200000 |\\n| 8 | 60000 | 120000 | 180000 |\\n| 9 | 50000 | 100000 | 160000 |\\n| 10 | 0 | 0 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Across both etching cycles, SiCl₂ exhibits the highest product count, followed by SiCl and then Si, suggesting a dominant formation of more heavily chlorinated etch products. The counts peak rapidly during the early phase of each cycle and then decay, likely corresponding to surface saturation and depletion events. This trend repeats consistently, confirming that each cycle produces a reproducible chemical response in the etch process.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiCl₂\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Cl₂ exposure, Pump and purge, Ar⁺ bombardment, Final purge\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_14_figure_2.jpg","caption":"FIGURE 2: Material characterizations of ALD grown $\\mathrm{WS}_2$ films without doping. (a) The XPS fine spectra of W 4f and S 2p for as-deposited and annealed 400-cycle $\\mathrm{WS}_2$ film. Both $\\mathrm{WS}_2$ and $\\mathrm{WS}_{2 + x}$ peaks were observed, with the W/S ratio of 1:2.7. Only $\\mathrm{WS}_2$ was observed in fine spectra of annealed $\\mathrm{WS}_2$ , indicating the necessity of annealing, and the W/S ratio was reduced to 1:2.1. (b) The Raman spectra of annealed $\\mathrm{WS}_2$ films with varying thickness. The Raman peak separation increased with increasing film thickness. (c) The plane-view and cross-sectional TEM result of 400-cycle annealed $\\mathrm{WS}_2$ film and the plane-view TEM result and statistical analysis of film grains by selected area electron diffraction (SAED) patterns. A layered structure was clearly observed in cross-sectional TEM. The average grain size of 259 $\\mathrm{WS}_2$ grains was $55\\mathrm{nm}$ , with the maximum size up to $160\\mathrm{nm}$ .","id":"train/atomic-layer-deposition/experimental-usecase/14/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/14/figure_2","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":0,"width":825,"height":719},{"panel_id":"b","x":840,"y":10,"width":485,"height":301},{"panel_id":"c","x":857,"y":365,"width":470,"height":294}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/Hanjie Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1328,"height":747,"image_format":"jpeg","image_sha256":"e7ad17a7932de5410c41372565684d32f723e59fa78d55af2950e322d830fe22","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_14_figure_3.jpg","caption":"FIGURE 3: Material characterization of Nb-doped p-type $\\mathrm{WS}_2$ . (a) The XPS fine spectra of as-deposited and annealed 400-cycle $\\mathrm{WS}_2$ with 30-cycle Nb doping. $\\mathrm{WS}_2$ $\\mathrm{WS}_{2 + \\mathrm{x}},$ and $\\mathrm{NBs}_2$ were all observed in as-deposited Nb-doped $\\mathrm{WS}_2$ film. After annealing, only $\\mathrm{WS}_2$ and $\\mathrm{NBs}_2$ were observed, indicating the effective doping. (b) The Raman spectra of 400-cycle $\\mathrm{WS}_2$ with Nb doping varying from 10 to 100 cycles. A blue shift of $\\mathrm{A_{1g}}$ peak was observed when increasing doping concentration, implying the stiffening of Nb-doped $\\mathrm{WS}_2$ lattice with Nb-S bonds. (c) The hall mobility and resistivity of $\\mathrm{WS}_2$ and Nb-doped $\\mathrm{WS}_2$ with 50-cycle Nb doping at temperature varying from $50\\mathrm{K}$ to $300\\mathrm{K}$ d) The mobility, resistivity, and TOF-SIMS of $\\mathrm{WS}_2$ and Nb-doped $\\mathrm{WS}_2$ with Nb doping of 15, 20, and 100 cycles. After 15-cycle Nb doping, the carrier type changed from electrons to holes, and the mobility decreased one order of magnitude, while the resistivity increased 4 orders of magnitude. However, with increasing Nb doping, the mobility continued to decrease, while the resistivity started to decrease. The normalized Nb secondary ion intensity of Nb-doped $\\mathrm{WS}_2$ films indicated the occurrence of p-type doping.","id":"train/atomic-layer-deposition/experimental-usecase/14/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/14/figure_3","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"multiple scatter plot"},{"panel_id":"d","label":"multiple scatter plot"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":3,"width":938,"height":623},{"panel_id":"b","x":938,"y":0,"width":316,"height":625},{"panel_id":"c","x":5,"y":711,"width":632,"height":395},{"panel_id":"d","x":669,"y":662,"width":569,"height":475}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/14/Hanjie Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1256,"height":1164,"image_format":"jpeg","image_sha256":"8dc38db4214e04afd996b17ebe71f447fd490ab62cd0f46e1a9fcfa00750e9a3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_18_fig_5.jpg","caption":"FIG. 5. Imaginary part of the complex dielectric function $(\\epsilon_{2})$ for $35.3\\mathrm{nm}$ thick $\\mathrm{ZrN}$ PEALD film at $150^{\\circ}\\mathrm{C}$ determined from in-situ SE measurements. The free electron and bound electron contributions to the dielectric function of $\\mathrm{ZrN}$ film are represented by Drude (D) and Lorentz oscillators (L1 and L2), respectively.","id":"train/atomic-layer-deposition/experimental-usecase/18/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/18/fig_5","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the imaginary part of the complex dielectric function (ε₂) of a 35.3 nm ZrN film deposited at 150 °C, obtained from in-situ spectroscopic ellipsometry. The ε₂ spectrum is modeled using a Drude term representing free-electron (metallic) response at low photon energies and two Lorentz oscillators (L1 and L2) corresponding to bound-electron interband transitions at higher energies. The strong Drude contribution confirms the metallic nature of the PEALD-grown ZrN film.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Photon energy (eV) | Dielectric function ε₂ |\\n|---|---|\\n| 0.7 | ~2.0 |\\n| 1.0 | ~0.8 |\\n| 2.0 | ~0.6 |\\n| 3.0 | ~1.2 |\\n| 4.0 | ~2.8 |\\n| 5.0 | ~3.5 |\\n| 6.0 | ~4.0 |\\n| 7.0 | ~3.6 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The strong Drude response observed in the dielectric-function analysis demonstrates a high free-carrier concentration, confirming the metallic nature of the PEALD-grown ZrN film even at low deposition temperature. This metallic optical behavior supports the suitability of ZrN for applications such as diffusion barriers, conductive electrodes, and plasmonic or interconnect layers where both electrical conductivity and controlled thin-film growth are required.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Drude contribution dominates at low photon energies, while Lorentz oscillator contributions become prominent at higher photon energies.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Drude free-electron response at low photon energies, Lorentz oscillator L1 corresponding to interband transitions, Lorentz oscillator L2 corresponding to higher-energy electronic transitions, Combined Drude–Lorentz behavior indicative of metallic nitrides\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":611,"height":450}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/18/Triratna Muneshwar et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":611,"height":450,"image_format":"jpeg","image_sha256":"016e986a0af0d1d26ae43f19caa6b2ff72d66465b45208156eced7d6e10d658c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_25_figure_5.jpg","caption":"Figure 5. XPS $E_{\\mathrm{v}}$ spectra of the investigated (a) TGO and (b) ZGO films deposited on fused silica with varying cation ratios, $x$ .","id":"train/atomic-layer-deposition/experimental-usecase/25/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/25/figure_5","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure show svalence band XPS Ev spectra as a function of binding energy for Ge doped Tin oxide, TGO.\"},{\"panel_id\":\"b\",\"text\":\"The figure show svalence band XPS Ev spectra as a function of binding energy for Ge doped Zinc oxide, ZGO.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | x = 1 | x = 0.30 | x = 0.16 | x = 0.077 | x = 0 |\\n|----------------------|---------|----------|----------|-----------|---------|\\n| 10 | 300 | 280 | 270 | 260 | 250 |\\n| 8 | 320 | 300 | 290 | 280 | 270 |\\n| 6 | 280 | 260 | 250 | 240 | 230 |\\n| 4 | 180 | 160 | 150 | 140 | 130 |\\n| 2 | 80 | 70 | 60 | 55 | 50 |\\n| 0 | 20 | 15 | 10 | 8 | 5 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | x = 1 | x = 0.37 | x = 0.32 | x = 0.19 | x = 0.032 | x = 0 |\\n|----------------------|---------|----------|----------|----------|-----------|---------|\\n| 10 | 300 | 600 | 600 | 600 | 600 | 600 |\\n| 8 | 320 | 450 | 520 | 500 | 330 | 580 |\\n| 6 | 280 | 400 | 460 | 440 | 310 | 520 |\\n| 4 | 150 | 220 | 250 | 230 | 180 | 280 |\\n| 2 | 50 | 70 | 80 | 75 | 60 | 90 |\\n| 0 | 10 | 12 | 15 | 18 | 15 | 20 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The measured XPS Ev spectra indicated small differences between the ZGO sample series with the addition of Ge (b). Similar to the TGO sample series, the binding energy scale has been aligned to the C 1s peak at 285 eV to facilitate comparison between the samples and to exclude any charging effects. Increasing the Ge content, the Ev at the surface of the samples seems to shift slightly toward higher binding energies.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The valence band (Ev) spectrum recorded for GeOy, as shown image, indicates a shift of the Ev for GeOy toward higher binding energies compared to those for ZnO and SnOy, representing a shift away from the Fermi level (EF).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The measured XPS Ev spectra (a) were similar to large tails for all of the measured TGO films, even for the SnOy. This would suggest that the Ev position at the sample surface is very similar for the investigated TGO samples. It cannot, however, be excluded that the Ev position may vary in the bulk of the samples. To facilitate the relative comparison between samples and exclude charging effects, the binding energy scale was aligned to the C 1s peak of adventitious carbon at 285.0 eV. This also resulted in an energy scale alignment of the shallow core levels for the TGO sample series. Assuming that the Ev of the surface is representable for the bulk and that the electronic and optical Eg’s are identical, the increasing Eg and the identical Ev position suggest that Ec shifts upward as the Ge content of the films increases\"}]}]","bbox":[{"panel_id":"b","x":2,"y":343,"width":448,"height":329},{"panel_id":"a","x":2,"y":3,"width":445,"height":337}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/Adam Hultqvist et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":450,"height":675,"image_format":"jpeg","image_sha256":"7f4bb245f80c72bc8cd1cf5cd11022b1e34681e1a976e0edb9d473597108d705","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_7.jpg","caption":"Figure 7. XPS results of the films grown through (a), (c) the conventional ALD process and (b), (d) the ALD-DFM process.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_7","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a XPS spectrum, with the focus on the Germanium peaks related to Ge-O and Ge-Se. It includes experimental, simulated, and background data.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows a XPS spectrum, with the focus on the Germanium peaks related to Ge-O and Ge-Se. It includes experimental, simulated, and background data.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows a XPS spectrum, with the focus on the Selenium peaks related to Ge-Se. It includes experimental, simulated, and background data.\"},{\"panel_id\":\"d\",\"text\":\"The figure shows a XPS spectrum, with the focus on the Selenium peaks related to Ge-Se. It includes experimental, simulated, and background data.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Intensity (A.U.) |\\n|---|---|\\n| 27 | 0 |\\n| 28 | 0 |\\n| 29 | 0 |\\n| 30 | Ge-Se shoulder peak |\\n| 31 | 0 |\\n| 32 | 0 |\\n| 33 | Ge-O main peak |\\n| 34 | 0 |\\n| 35 | 0 |\\n| 36 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Intensity (A.U.) |\\n|---|---|\\n| 27 | 0 |\\n| 28 | 0 |\\n| 29 | 0 |\\n| 30 | Ge-Se peak |\\n| 31 | 0 |\\n| 32 | 0 |\\n| 33 | Ge-O peak |\\n| 34 | 0 |\\n| 35 | 0 |\\n| 36 | 0 |\"},{\"panel_id\":\"c\",\"text\":\"| Binding Energy (eV) | Intensity (A.U.) |\\n|---|---|\\n| 50 | 0 |\\n| 51 | 0 |\\n| 52 | 0 |\\n| 53 | 0 |\\n| 54 | 0 |\\n| 55 | Ge-Se peak |\\n| 56 | 0 |\\n| 57 | 0 |\\n| 58 | 0 |\\n| 59 | 0 |\\n| 60 | 0 |\"},{\"panel_id\":\"d\",\"text\":\"| Binding Energy (eV) | Intensity (A.U.) |\\n|---|---|\\n| 50 | 0 |\\n| 51 | 0 |\\n| 52 | 0 |\\n| 53 | 0 |\\n| 54 | 0 |\\n| 55 | Ge-Se peak |\\n| 56 | 0 |\\n| 57 | 0 |\\n| 58 | 0 |\\n| 59 | 0 |\\n| 60 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This can not so easily be concluded as a higher peak does not necessarily mean more of a material, as the peaks can both scale differently with densities of species.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The peak location is 55 eV.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The electrons are generated by x-rays impinging on the surface of a material.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The envelope is composed of a model for the Ge-O and the Ge-Se peaks. This together with a background line will be fitted on the experimental data.\"}]}]","bbox":[{"panel_id":"a","x":15,"y":37,"width":300,"height":320},{"panel_id":"b","x":367,"y":34,"width":300,"height":323},{"panel_id":"c","x":15,"y":408,"width":300,"height":325},{"panel_id":"d","x":368,"y":408,"width":299,"height":325}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":667,"height":733,"image_format":"jpeg","image_sha256":"fa3ca61c9b849acf55eb9f06ac28ce1eff4bf697e907ca98f7b5b2c2247e51b4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_31_figure_4.jpg","caption":"Figure 4. Synchrotron radiation XRD results of $\\mathrm{CoSi_2}$ from PE-ALD Co by rapid thermal annealing at various annealing temperature. $[\\star \\mathrm{CoSi_2(111)}$ $\\bullet$ $\\mathrm{CoSi_2(220)}$ $\\bullet$ $\\mathrm{CoSi(210)}$ $\\blacksquare$ $\\mathrm{CoSi(211)}$ $\\pmb{\\Delta}$ $\\beta$ Co(111)].","id":"train/atomic-layer-deposition/experimental-usecase/31/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/31/figure_4","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure shows synchrotron radiation XRD patterns of PE-ALD Co films on Si(001) after rapid thermal annealing (400–900 °C). The as-deposited film exhibits no distinct peaks, indicating an amorphous or poorly crystalline Co layer. With increasing annealing temperature, diffraction peaks corresponding to β-Co (111) appear first, followed by the emergence and strengthening of CoSi₂ (111), (220), (210), and (211) reflections at ≥700–800 °C, confirming the formation of highly crystalline CoSi₂ at elevated temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| $T_{a}$=900 °C | $T_{a}$=800 °C | $T_{a}$=600 °C | $T_{a}$=500 °C | $T_{a}$=400 °C | as-dep |\\n|---|---|---|---|---|---|\\n| ![](https://example.com/image1.png) | ![](https://example.com/image2.png) | ![](https://example.com/image3.png) | ![](https://example.com/image4.png) | ![](https://example.com/image5.png) | ![](https://example.com/image6.png) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Above approximately 700–800 °C.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Crystalline CoSi₂ is a low-resistivity, thermally stable silicide commonly used as a contact material in CMOS technology. Its formation demonstrates that PE-ALD Co films can be converted into technologically relevant silicides through post-deposition annealing, validating the process for integration into advanced semiconductor devices.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Amorphous or poorly crystalline Co (as-deposited), β-Co (111) at intermediate temperatures, CoSi₂ (111, 220, 210, 211) at high temperatures\"}]}]","bbox":[{"panel_id":"a","x":2,"y":6,"width":540,"height":437}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/Han-Bo-Ram Lee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":542,"height":444,"image_format":"jpeg","image_sha256":"9f87ce6f0b667a975e574e252e4069b956f23a352e807fa5d7f71a53d466caa0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_35_figure_5.jpg","caption":"Figure 5. (a) Gracing incidence X-ray diffractograms of as-deposited and $\\mathrm{N}_2$ -annealed GST films. (b) Cross-section FESEM image of a GST film deposited on a high aspect-ratio trench pattern. Scale bar $= 600~\\mathrm{nm}$ .","id":"train/atomic-layer-deposition/experimental-usecase/35/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/35/figure_5","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a spectra chart with labeled peaks corresponding to different crystal structures. The intensity of the peaks varies across the 2θ range.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows a microscopic image of a high aspect ratio sample, coated with material with a scale bar indicating the measurement unit.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (°) | Intensity (a.u.) as-depos |Intensity (a.u.) annealed 130 |Intensity (a.u.) 370 |\\n|---|---|---|---|\\n| 20 | - |-|004 HCP|\\n| 25 | - |-|111 FCP, 005 HCP|\\n| 30 | -|- |002 FCC|\\n| 40 | -|- |016HCP|\\n| 42 | - |022 FCC|017HCP|\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The anneal steps transforms the amorphous film into crystalline form, where the crystalline phase is dependent on annealing temperature.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HCP\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film seems to have the same thickness throughout the trench structure, so the growth can be considered conformal.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"the width is not constant, as it varies from 600 nm to around 1.2 microns\"}]}]","bbox":[{"panel_id":"a","x":4,"y":1,"width":524,"height":372},{"panel_id":"b","x":1,"y":400,"width":536,"height":197}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/Viljami Pore et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":536,"height":591,"image_format":"jpeg","image_sha256":"47da395966e9f177eacfcd6047ab41f916afe91793b71cd521dcb46a2c6802cc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_37_figure_1.jpg","caption":"Figure 1. vdW epitaxy of $\\mathrm{MS}_2$ films on mica with $\\mathrm{ZrS}_2$ as an example. (a) Out-of-plane x-ray diffractograms (2 $\\theta$ and $\\theta -2\\theta$ measurements) with the (0 0 0 I) $\\mathrm{ZrS}_2$ (dashed lines) and substrate reflections marked (asterisks mark substrate peaks originating from W L $\\alpha$ and Cu K $\\beta$ radiation, see section S1). (b) In-plane $\\phi$ scans of (1 0 1 0) $\\mathrm{ZrS}_2$ (28.2° 20 $\\chi$ ) and (0 0 0) mica (19.7° 20 $\\chi$ ) reflections. The data have been offset vertically for clarity. (c) AFM image of a 7 nm $\\mathrm{ZrS}_2$ film grown on mica at $400^{\\circ}\\mathrm{C}$ using 1000 ALD cycles. (d) Schematic of the possible $\\mathrm{MS}_2$ ( $\\mathrm{M} = \\mathrm{Hf}, \\mathrm{Sn}, \\mathrm{Zr}$ ) domains on mica (for clarity, only one $\\mathrm{MS}_2$ layer is shown). (e) Schematic of a possible CSL between mica and a $0^\\circ \\mathrm{MS}_2$ domain (only bottom colour layer is shown).","id":"train/atomic-layer-deposition/experimental-usecase/37/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/37/figure_1","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A degree-log plot showing the intensity of out-of-plane X-ray diffraction peaks for ZrS2 and Mica. Here ZrS2 is chosen as am example for 2D materials MS2\"},{\"panel_id\":\"b\",\"text\":\"A phase-log plot showing the intensity of in-of-plane X-ray diffraction peaks for ZrS2 and Mica.\"},{\"panel_id\":\"c\",\"text\":\"An AFM image showing the surface roughness of a material.\"},{\"panel_id\":\"d\",\"text\":\"A molecular structure diagram illustrating the domains of MS2 and Mica.\"},{\"panel_id\":\"e\",\"text\":\"A molecular structure diagram illustrating the coincidence site lattices (CSL) between Mica and MS2\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Peak Position (° 2θ) | Assignment |\\n|-----------------------|------------------|\\n| ~8 | ZrS₂ (0001) |\\n| ~15 | ZrS₂ (0002) |\\n| ~28 | Mica (004) |\\n| ~30 | Mica (006) |\\n| ~45 | Mica (0010) |\\n| ~47 | Mica (023) |\"},{\"panel_id\":\"b\",\"text\":\"| Material | Peaks (° φ) |\\n|-----------------|---------------------------------------|\\n| (10\\\\bar{1}0) ZrS₂ | ~0, ~60, ~120, ~180, ~240, ~300 |\\n| (020) mica | ~0, ~90, ~180, ~270 |\"},{\"panel_id\":\"c\",\"text\":\"| Parameter | Value |\\n|--------------|----------|\\n| Rₐ | 0.53 nm |\\n| Scan Size | 100 nm |\\n| Height Range | 12.5 nm |\"},{\"panel_id\":\"d\",\"text\":\"| Angle | Relation |\\n|-------|--------------|\\n| 0° | [010] mica |\\n| 30° | [2110] ZrS₂ |\\n| 60° | [1210] ZrS₂ |\\n| 90° | [2110] ZrS₂ |\"},{\"panel_id\":\"e\",\"text\":\"| Parameter | Value |\\n|------------------|--------------|\\n| a (mica) | ~5 Å |\\n| a (ZrS₂) | ~3.7 Å |\\n| Matching Ratio | ~7 (mica) : 5 (ZrS₂) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"XRD measurements of ZrS2 on mica showed excellent (0 0 0 1)ZrS2 ‖ (0 0 0 1) mica out-of-plane alignment, as only the (0 0 0 l) reflections of both the film and the substrate were seen in a symmetric θ − 2θ measurement and no peaks of the film were observed in an asymmetric grazing incidence (2θ) measurement.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No. With a roughness of 0.54 nm, the ZrS2 (as well as HfS2 and SnS2 films ) deposited on mica are smooth with no clear evidence of the different domains is offered by the morphology.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Despite different crystal structures, similarities in the mica and MS2 surfaces can be observed. Approximating the mica surface as hexagonal\\nallows finding coincidence site lattices (CSLs), where only some of the lattice points of MS2 and mica coincide. Due to the weak interactions between the film and the substrate, the CSL concept is particularly relevant for the vdW epitaxy.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A φ scan of the (1 0 \\\\bar(1) 0)ZrS2 reflection resulted in twelve peaks over a full 360° rotation, while six peaks were observed for the (0 2 0)mica\\nreflection. Normally, peaks are expected every 360/n degrees for a plane of n-fold symmetry. The observation of six peaks every 60° from mica, which\\nhas only mirror symmetry, has been explained by the presence of different stacking orientations. Although the 1T metal sulfides have only three-fold\\nrotational symmetry around the c-axis, the (1 0 \\\\bar(1) 0) plane has six-fold symmetry, which results in six peaks from a single in-plane orientation. Thus, at least two orientations of ZrS2 were present in rather similar amounts.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":9,"width":381,"height":321},{"panel_id":"b","x":407,"y":18,"width":342,"height":343},{"panel_id":"c","x":819,"y":16,"width":284,"height":247},{"panel_id":"d","x":9,"y":368,"width":784,"height":274},{"panel_id":"e","x":800,"y":297,"width":328,"height":342}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/Mattinen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1134,"height":647,"image_format":"jpeg","image_sha256":"4befd9a97da96d26cad455486593d7772307a91e7acf9af164ace983031820cf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_figure_10.jpg","caption":"Figure 10. Mn K-edge XANES of (a) annealed $200\\mathrm{cLi - MnO_2}$ -600 sample compared to the corresponding unannealed one and (b) $300\\mathrm{cLi - }$ $\\mathrm{MnO}_2\\cdot$ -600 sample compared to the corresponding unannealed one. Mn K-edge EXAFS of (c) $200\\mathrm{cLi - MnO_2}$ -600 sample and the corresponding unannealed one and (d) $300\\mathrm{cLi - MnO_2}$ -600 sample with the corresponding unannealed one. Comparison of (e) Mn K-edge XANES and (f) O Kedge XANES measurements done in $45^{\\circ}$ incident angle. The graphs have been rescaled.","id":"train/atomic-layer-deposition/experimental-usecase/38/figure_10","sample_id":"atomic-layer-deposition/experimental-usecase/38/figure_10","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"},{"panel_id":"e","label":"stacked spectra chart"},{"panel_id":"f","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Mn K-edge XANES spectra are shown for 200cLi–MnO₂ before and after annealing at 600 °C, together with reference spectra. The main absorption edge appears near ~6560 eV in both cases. Annealing causes only a small change in the near-edge shape, suggesting limited modification of the average Mn oxidation state. The overall spectral position remains close to the LiMn₂O₄ reference.\"},{\"panel_id\":\"b\",\"text\":\"Mn K-edge XANES spectra of 300cLi–MnO₂ are compared before and after annealing at 600 °C. The annealed and unannealed curves largely overlap in the main-edge region. Minor changes are visible in the shoulder near ~6552–6554 eV. This indicates that annealing slightly modifies local Mn coordination without strongly shifting the edge energy.\"},{\"panel_id\":\"c\",\"text\":\"Mn K-edge EXAFS in R-space is shown for 200cLi–MnO₂ with and without annealing. The first peak near ~1.9 Å corresponds to Mn–O coordination. The second peak near ~2.8–2.9 Å is assigned to Mn–Mn1 interactions. Relative peak intensities change modestly after annealing, pointing to small adjustments in local structure.\"},{\"panel_id\":\"d\",\"text\":\"Mn K-edge EXAFS data for 300cLi–MnO₂ are plotted in R-space for annealed and unannealed samples. The Mn–O peak remains centered near ~1.9 Å, while the Mn–Mn1 peak appears near ~2.8–2.9 Å. Annealing mainly affects peak amplitude rather than peak position. This suggests subtle reordering rather than a structural phase change.\"},{\"panel_id\":\"e\",\"text\":\"Mn L-edge XANES spectra compare lithiated samples with Mn³⁺ and Mn⁴⁺ reference compounds. Vertical guide lines mark the Mn³⁺ feature near ~642 eV and the Mn⁴⁺ feature near ~644–645 eV. The sample spectra fall between the two references. This indicates mixed Mn³⁺/Mn⁴⁺ character rather than a single oxidation state.\"},{\"panel_id\":\"f\",\"text\":\"O K-edge XANES spectra are shown with guide lines marking Mn⁴⁺ and Mn³⁺-related features near ~529.5, ~531.0, and ~532.0 eV. The sample curves show intensity distributed across these regions. This reflects hybridization between O 2p states and Mn 3d states of different oxidation character. The spectra support the mixed-valence picture inferred from the Mn-edge data.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Trace | Feature | Energy (eV) |\\n|-------|---------|-------------|\\n| 200cLi–MnO2 | main edge/peak | ~6560 |\\n| 200cLi–MnO2 | shoulder | ~6553 |\\n| 200cLi–MnO2–600 | main edge/peak | ~6560 |\\n| 200cLi–MnO2–600 | shoulder | ~6553 |\\n| LiMn2O4 ref. | main edge/peak | ~6555–6556 |\"},{\"panel_id\":\"b\",\"text\":\"| Trace | Feature | Energy (eV) |\\n|---|---|---|\\n| 300cLi–MnO2 | main edge/peak | ~6558–6560 |\\n| 300cLi–MnO2 | shoulder | ~6552–6554 |\\n| 300cLi–MnO2–600 | main edge/peak | ~6558–6560 |\\n| 300cLi–MnO2–600 | shoulder | ~6552–6554 |\\n| LiMn2O4 ref. | main edge/peak | ~6555–6556 |\"},{\"panel_id\":\"c\",\"text\":\"| Trace | Feature | R (Å) |\\n|---|---|---|\\n| 200cLi–MnO2 | Mn–O peak | ~1.9 |\\n| 200cLi–MnO2 | Mn–Mn1 peak | ~2.8–2.9 |\\n| 200cLi–MnO2–600 | Mn–O peak | ~1.9 |\\n| 200cLi–MnO2–600 | Mn–Mn1 peak | ~2.8–2.9 |\\n| LiMn2O4 ref. | Mn–O peak | ~1.9 |\\n| LiMn2O4 ref. | Mn–Mn1 peak | ~2.8–2.9 |\"},{\"panel_id\":\"d\",\"text\":\"| Trace | Feature | R (Å) |\\n|---|---|---|\\n| 300cLi–MnO2 | Mn–O peak | ~1.9 |\\n| 300cLi–MnO2 | Mn–Mn1 peak | ~2.8–2.9 |\\n| 300cLi–MnO2–600 | Mn–O peak | ~1.9 |\\n| 300cLi–MnO2–600 | Mn–Mn1 peak | ~2.8–2.9 |\\n| LiMn2O4 ref. | Mn–O peak | ~1.9 |\\n| LiMn2O4 ref. | Mn–Mn1 peak | ~2.8–2.9 |\"},{\"panel_id\":\"e\",\"text\":\"| Trace | Feature | Energy (eV) |\\n|---|---|---|\\n| Mn2O3 ref. | Mn3+ marker line | ~642 |\\n| MnO2 ref. | Mn4+ marker line | ~644–645 |\\n| 200cLi–MnO2 | LIII peak/edge | ~642–645 |\\n| 200cLi–MnO2 | LII peak/edge | ~654–655 |\\n| 300cLi–MnO2–600 | LIII peak/edge | ~642–645 |\\n| 300cLi–MnO2–600 | LII peak/edge | ~654–655 |\"},{\"panel_id\":\"f\",\"text\":\"| Trace | Feature | Energy (eV) |\\n|---|---|---|\\n| all traces | Mn4+ marker line | ~529.5 |\\n| all traces | Mn3+ marker line | ~531.0 |\\n| all traces | Mn4+ marker line | ~532.0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The annealing treatment produces a shift in the peak to a higher energy values.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 300cLi−MnO2-600 sample shows an additional peak at ~3.5 Å in Mn K-edge EXAFS, indicating the presence of an impurity phase, likely Li2−zMnO2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"a Annealing results in changes to the edge position and post-edge features, indicating differences in the local electronic environment of Mn\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The absorption edge shifted to lower values, but the pre-edge region remained similar in both samples. The Mn K-edge EXAFS spectrum of the 200cLi−MnO2-600 sample resembles the reference LiMn2O4 even better than the corresponding unannealed 200cLi−MnO2 sample. The result suggest that annealing causes phase change.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 300cLi sample shows a clearer spectral shift and EXAFS ordering after annealing. This is likely because it starts closer to stoichiometric LiMn₂O₄, allowing annealing to more effectively perfect the spinel structure, whereas the 200cLi sample is less lithiated and thus less responsive.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The shoulder reflects changes in local Mn coordination and electronic structure. Its persistence with only minor variation after annealing indicates subtle rearrangements rather than a change in dominant bonding configuration. This is consistent with modest local ordering effects.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There is a big shift observed between the literature values and the measured values. This indicates that both materials are not entirely the same or the measurement procedure has a certain error margin.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Changes in the O K-edge after annealing suggest modifications in oxygen bonding and hybridization. Improved spectral definition implies a more stable surface oxide environment, which could reduce oxygen loss during cycling and enhance cathode stability in batteries.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Improved structural stability during cycling\\n-Reduced Jahn–Teller distortion\\n-Enhanced electronic conductivity\\n-Greater resistance to phase degradation\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"An energy range should be probed around 531 eV.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It seems that the annealing treatment removes the Mn+3 peak from the spectra.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300cLi-MnO2 without annealing treatment.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectral changes observed after annealing indicate improved structural order and phase purity in Li-MnO2 films, with the 200cLi−MnO2-600 sample closely matching LiMn2O4 and the 300cLi−MnO2-600 showing impurity-related features. Understanding these changes allows researchers to optimize annealing conditions to maximize the formation of stoichiometric LiMn2O4, reduce unwanted impurity phases, and control manganese oxidation states, ultimately enhancing lithium intercalation, electrochemical stability, and battery performance.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mn-O: the distance between manganese and oxygen, Mn-Mn1: the shortest distance to another manganese atom.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Annealing seems to remove the Mn3+ features in the fine structure of the Mn L-edge XANES as well as that of the O Kedge XANES . In both cases, the spectra resemble the LiMn2O4 reference.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They represent the first two coordination shells around Mn: the Mn-O bond distance (~1.5 Å) and the nearest Mn-Mn distance (~2.5 Å) between edge-sharing octahedra.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"LiMnO2O4, Mn2O3, and MnO2 films used as a reference. Also, 200cLi-MnO2, 300cLi-MnO2, and 200cLi-MnO2-600 without annealing treatment; and 300cLi-MnO2-600, with annealing treatment.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure compares annealed and unannealed samples using Mn K-edge XANES, Mn K-edge EXAFS, and O K-edge XANES measurements.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Comparing both edges helps relate changes in Mn oxidation state to corresponding changes in the oxygen electronic structure, improving interpretation of material behaviour.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The annealed spectrum is slightly shifted closer to the Mn2o3 reference, but the overall shape is similar.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A shift to lower binding energy signifies a decrease in the effective nuclear charge felt by the electrons, corresponding to a lower average oxidation state (e.g., shifting closer to the Mn_2O_3 ).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For 200cLi-MnO₂-600, annealing sharpens the Mn-O and Mn-Mn1 peaks, indicating improved local order matching the LiMn₂O₄ reference. For 300cLi-MnO₂-600, an unexpected peak appears at ~3.5 Å, suggesting a secondary phase with non-octahedral Mn coordination.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It likely contains an impurity phase (Li₂₋ᵤMnO₂) where Mn has ~+2 oxidation state. This explains the MnO-like pre-edge shape in XANES and the extra peak at 3.5 Å in EXAFS. XRD also detected this impurity phase.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It compares Mn K-edge XANES spectra of annealed (–600) and unannealed 200cLi–MnO₂ samples.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The anneal ensures some sort of shift of the spectrum to lower energies.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They denote the two spin-orbit split components of the Mn L-edge, arising from transitions from 2p₃/₂ (L_III) and 2p₁/₂ (L_II) core levels to empty 3d states.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All measured spectra show similar result indicating that the oxidation states are similar.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Mn L-edge: Annealing removes Mn3+ features, spectra resemble LiMn2O4 reference, O K-edge: Annealing removes features associated with reduced Mn oxidation states spectra resemble LiMn2O4 reference, Overall: Spectral changes indicate improved phase purity and structural ordering after annealing\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"d The EXAFS panels provide information about changes in local atomic coordination and bonding distances around Mn.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The annealed sample.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"LiMn2O4,Mn2O3,MnO2\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Annealing reduces disorder and sharpens the Mn–O and Mn–Mn coordination peaks in EXAFS. This indicates a more ordered local structure, with bond lengths approaching those of well-defined spinel LiMn₂O₄.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mn–O appears at lower R (≈1.9 Å).\"}]}]","bbox":[{"panel_id":"a","x":47,"y":4,"width":397,"height":335},{"panel_id":"b","x":451,"y":2,"width":390,"height":337},{"panel_id":"c","x":47,"y":341,"width":388,"height":343},{"panel_id":"d","x":451,"y":334,"width":386,"height":349},{"panel_id":"e","x":40,"y":688,"width":397,"height":339},{"panel_id":"f","x":457,"y":688,"width":383,"height":339}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":842,"height":1027,"image_format":"jpeg","image_sha256":"8351e8d4687ae4b6f85d8b5ce76056a0ae63353ac3c3751f22677022650df153","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_figure_4.jpg","caption":"Figure 4. (a) Mn K-edge XANES of samples $\\mathrm{MnO}_2$ , $10\\mathrm{Li} - \\mathrm{MnO}_2$ , and $50\\mathrm{Li} - \\mathrm{MnO}_2$ measured in the TEY mode. (b) FT of the Mn K-edge EXAFS of the same samples. Crystal structures of $\\beta -\\mathrm{MnO}_2$ (ICDD PDF 24-0735) visualized with the VESTA software. (c) Mn L-edge XANES measured in $45^{\\circ}$ incident angle. The graphs have been rescaled.","id":"train/atomic-layer-deposition/experimental-usecase/38/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/38/figure_4","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays the X-ray absorption near-edge structure (XANES) of MnO2, 10cLi-MnO2, 50cLi-MnO2, MnO2 ref, LiMn2O4 ref, and MnO ref samples.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows Fourier Transform (FT) of the Mn K-edge extended X-ray absorption near-edge structure (EXAFS) of MnO2, 10cLi-MnO2, 50cLi-MnO2, MnO2 ref, LiMn2O4 ref, and MnO ref samples.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the absorption spectra of MnO2, 10cLi-MnO2, 50cLi-MnO2, MnO2 ref, LiMn2O4 ref, and MnO ref samples, as a function of the energy (eV), highlighting the Mn+3 and Mn+4.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Energy Range (eV) | Key Features |\\n|-----------------|--------------------|-----------------------------------------------|\\n| MnO₂ | 6540–6580 | Strong edge at ~6555 eV; post-edge oscillations |\\n| 10cLi-MnO₂ | 6540–6580 | Slight edge shift; reduced intensity |\\n| 50cLi-MnO₂ | 6540–6580 | Further edge shift; more pronounced changes |\\n| MnO₂ ref. | 6540–6580 | Baseline for Mn⁴⁺ |\\n| LiMn₂O₄ ref. | 6540–6580 | Spinel reference |\"},{\"panel_id\":\"b\",\"text\":\"| Peak Position (Å) | Assignment |\\n|--------------------|-----------|\\n| ~1.5 | Mn–O |\\n| ~2.8 | Mn–Mn1 |\\n| ~3.4 | Mn–Mn2 |\"},{\"panel_id\":\"c\",\"text\":\"| Energy (eV) | Feature |\\n|-------------|----------|\\n| ~641 | Mn³⁺ (LIII) |\\n| ~644 | Mn⁴⁺ (LIII) |\\n| ~652 | LII region |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Mn-Mn2 bond decreases as the number of lithium cycles increases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The MnO2, 10cLi0MnO2, and 50cLi-Mno2 samples exhibit the same intensity of Mn-O bonds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 641 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The β-MnO₂ reference.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mn-O, Mn-Mn₁, and Mn-Mn2.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Immediate reduction of manganese occurs as soon as lithium is inserted, as the absorption edge shifts to lower energy in the Mn K-edge XANES.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The main Mn-O coordination peak decreases in intensity and shifts slightly. This indicates increasing structural disorder and a change in bond lengths as lithium is inserted into the MnO₂ lattice.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It indicates the β-MnO₂ pyrolusite structure, where Mn-Mn2 (~3.5 Å) corresponds to corner-sharing octahedra. This peak is absent in spinel LiMn₂O₄.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The FT representation reorganizes the oscillatory EXAFS signal into peaks that correspond more directly to real-space neighbor shells. That helps separate first-shell Mn–O from higher-shell Mn–Mn contributions in a visually interpretable way. For comparison across samples, it also makes changes in peak intensity and definition easier to track at a glance.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lithium replaces some of the manganese in the crystal, mostly replacing the Mn in the Mn-Mn2 position.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in subfigure a, the reduction of Mn can be observed as it shifts to lower energy values.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 10cLi-MnO2 samples, due to the peaks are present in lowest energy values.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The absorption edge shifts to lower energy, indicating reduction of manganese.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ICDD PDF 35-0782\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, it does not. The blue line overlaps almost perfectly with the black line (β-MnO₂) and looks completely different from the dashed line (LiMn₂O₄). This confirms that 50 cycles are insufficient to induce a bulk phase transformation to the spinel structure; the material remains in the precursor phase.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 50cLi sample shows more advanced conversion. Its K-edge position is closer to the LiMn₂O₄ reference, and its L-edge fine structure more closely resembles the spinel than the 10cLi sample does.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They closely resemble the MnO₂ powder reference, indicating that β-MnO₂ remains the dominant phase at low lithium concentrations (x < 0.5).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Crystal field splitting of Mn 3d orbitals in octahedral coordination—t₂g (lower energy) and eg (higher energy) states visible in the pre-edge region.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The absorption edge shifts to lower energy and Mn³⁺ features appear in the L-edge spectra even for 10cLi-MnO₂, indicating partial reduction of Mn⁴⁺ to Mn³⁺.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Reference compounds anchor spectral features to known Mn oxidation states and coordination environments. This enables relative positioning of unknown or modified samples along a redox continuum. Such benchmarking is critical when evaluating lithiation-induced electronic changes.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In panel (a), the MnO reference peaks at lower energy (~6556.5 eV), LiMn₂O₄ sits higher (~6560.5 eV), and the MnO₂-based samples peak higher still (≈6562 eV range, depending on lithiation).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, especially the literature values for MnO2 and LiMn2O4 nicely overlap with the measured values for MnO2 and 50cLi-MnO2 respectively.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The peak absorption shifts to higher energies for MnO2 with respect to MnO.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Mn–O coordination, Mn–Mn₁ interactions between edge-sharing octahedra, Mn–Mn₂ interactions between corner-sharing octahedra\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Already from the 10cLi-MnO2 sample onward.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. The L-edge XANES measures the absorption by the electric dipole-allowed transition from the\\n2p orbital to the unfilled 3d orbital of a transition metal resulting in an intense and feature-rich LII,III-edge XANES spectra.\\n2. The K-edge measures dipole-forbidden transition from the 1s orbital to the 3d orbital and hence are of lower-intensity.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Differences between surface (L-edge) and bulk (K-edge) spectra suggest that the chemical state of manganese at the surface differs from the interior. This implies lithiation may proceed non-uniformly, with the surface transforming first.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They provide fixed reference energies in the L₃ region to help relate changes in the sample line shape/position to Mn³⁺- and Mn⁴⁺-associated spectral features.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the lithium content in the film seems to induce a shift in oxidation state of Mn, where Mn3+ shifts towards Mn4+.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Mn K-edge XANES shows a systematic shift of the absorption edge to lower energy with lithium insertion, confirming manganese reduction, while the preservation of pre-edge features indicates minimal distortion of the local coordination environment. The FT EXAFS spectra further demonstrate that the Mn–O, Mn–Mn₁, and Mn–Mn₂ coordination peaks remain comparable to the β-MnO₂ reference. In addition, the Mn L-edge XANES measured at a bulk-sensitive incident angle reveals increased Mn³⁺ contributions without loss of structural features. Together, these observations indicate that lithium insertion alters the manganese oxidation state while maintaining the fundamental β-MnO₂ framework.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":10,"width":484,"height":548},{"panel_id":"b","x":502,"y":7,"width":323,"height":268},{"panel_id":"c","x":495,"y":281,"width":399,"height":275}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":978,"height":558,"image_format":"jpeg","image_sha256":"1be8dd0915ae87bb7e84cad9ac3f4ef5d636254a567772228f3a5ba0eb0daf38","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_figure_6.jpg","caption":"Figure 6. (a) Mn K-edge XANES of samples $100\\mathrm{cLi - MnO}_2 - 300\\mathrm{cLi - MnO}_2$ measured in TEY mode. (b) FT of the Mn K-edge EXAFS of the same samples. The crystal structure of $\\mathrm{LiMn}_2\\mathrm{O}_4$ (ICDD PDF 35-0782) is visualized with the VESTA software.25","id":"train/atomic-layer-deposition/experimental-usecase/38/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/38/figure_6","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Compares Mn K-edge XANES (TEY) spectra of 100c–300c Li-treated MnO₂ against MnO₂, LiMn₂O₄, and MnO references, with near-edge and pre-edge features (t₂g/e_g region) highlighted in the inset. Subtle shifts in white-line shape and near-edge intensity indicate progressive modification of Mn electronic structure with increasing lithiation.\"},{\"panel_id\":\"b\",\"text\":\"Shows Fourier-transformed Mn K-edge EXAFS, where the Mn–O first-shell peak and Mn–Mn coordination feature evolve across cycle number, suggesting increasing local disorder and altered medium-range ordering. The LiMn₂O₄ structure schematic provides structural context for interpreting Mn–O and Mn–Mn pathways associated with a lithiated spinel-like environment.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Trace | Feature | Energy (eV) |\\n|---|---|---|\\n| 100cLi–MnO₂ | t₂g pre-edge (inset marker) | ~6539.5 |\\n| 100cLi–MnO₂ | e_g pre-edge (inset marker) | ~6542.2 |\\n| 100cLi–MnO₂ | white-line maximum | ~6561.5–6562.0 |\\n| 200cLi–MnO₂ | white-line maximum | ~6561.5–6562.0 |\\n| 300cLi–MnO₂ | white-line maximum | ~6561.5–6562.0 |\\n| LiMn₂O₄ ref. | white-line maximum | ~6559.5–6560.0 |\\n| MnO ref. | white-line maximum | ~6556–6557 |\\n| MnO₂ ref. | white-line maximum | ~6562 |\"},{\"panel_id\":\"b\",\"text\":\"| Trace | Peak assignment | R (Å) |\\n|---|---|---|\\n| 100cLi–MnO₂ | Mn–O (first shell) | ~1.7–1.8 |\\n| 100cLi–MnO₂ | Mn–Mn1 | ~2.7–2.9 |\\n| 200cLi–MnO₂ | Mn–O (first shell) | ~1.7–1.8 |\\n| 200cLi–MnO₂ | Mn–Mn1 | ~2.7–2.9 |\\n| 300cLi–MnO₂ | Mn–O (first shell) | ~1.7–1.8 |\\n| 300cLi–MnO₂ | Mn–Mn1 | ~2.7–2.9 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The peak with the highest intensity is related to the Mn-O peak.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The pre-edge feature corresponding to the 1s → 3d transition.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Rutile phase has varied Mn-Mn distances (edge vs. corner sharing), while the Spinel phase has a uniform, highly symmetric 3D arrangement , resulting in a single primary neighbor distance.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3D Diffusion Channels. The Spinel structure has an interconnected 3D network of tunnels for Lithium movement, whereas Rutile only has narrow 1D channels that block easily.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Mn–O peak reflects coherence and bond-length distribution within MnO₆ octahedra. Changes in peak intensity or width suggest increasing local disorder or mixed valence, while persistence of the peak indicates retention of octahedral coordination despite electronic changes.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Greater risk of structural instability during cycling\\n-Transport heterogeneity across the film\\n-Higher likelihood of capacity fade\\n-Increased sensitivity to degradation reactions\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The XANES spectra show a systematic shift of the absorption edge to lower energies and increased pre-edge intensities with higher lithium content, indicating reduction of Mn and the presence of JT-active Mn³⁺ ions. The EXAFS spectra reveal only Mn–O and Mn–Mn1 peaks, with diminished intensity at higher lithium levels, reflecting local structural distortion around manganese. The absence of the Mn–Mn2 peak confirms that LiMn₂O₄ is the dominant phase. Together, these observations demonstrate that lithium insertion reduces the average oxidation state of manganese while slightly distorting the local octahedral environment without forming significant new phases.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Mn-O distance seems to be slightly bigger than the Li-O distance. This can also be concluded from the tetrahedral and octahedral structures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Mn–O peak: indicates the local Mn–O coordination environment, Mn–Mn1 peak: represents interactions between edge-sharing Mn octahedra, Absence of Mn–Mn2 peak: confirms LiMn₂O₄ is the dominant phase and that corner-sharing octahedra are not present\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectra for 100 and 200 cycles of lithium have almost the same absorbance, indicating that there is no additional lithium incorporation, so yes there is a delay.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The measured spectra deviate the most from the MnO reference spectra, so this material is likely not present.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300cLi (Yellow). Its shape aligns with the reference, whereas the Green line is still transitioning.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Clear peak splitting indicates a well-defined crystal field. If the lattice were disordered or amorphous, these features would be smeared out.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Reference spectra anchor oxidation-state and coordination interpretation. MnO₂ represents a more oxidized environment, MnO a reduced state, and LiMn₂O₄ a lithiated spinel-like framework. Comparing edge position, white-line shape, and near-edge features allows lithiation-induced electronic changes to be interpreted relative to these well-defined benchmarks.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Increasing cycles indicate progressive modification toward a more lithiated, Mn-reduced electronic environment.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":507,"height":567},{"panel_id":"b","x":497,"y":9,"width":342,"height":274},{"panel_id":"c","x":537,"y":301,"width":234,"height":196}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":839,"height":572,"image_format":"jpeg","image_sha256":"d69fef778b910597982e7a3a4e5c1623a3c866f474b23f622a87f6a84eebff69","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_45_figure_2.jpg","caption":"Figure 2. (Color online) The imaginary part of the dielectric function $(\\epsilon_2)$ for $\\mathrm{Pt}$ and $\\mathrm{PtO_2}$ as determined by in situ SE measurements evaluated using Drude-Lorentz and Tauc-Lorentz parametrizations, respectively.","id":"train/atomic-layer-deposition/experimental-usecase/45/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/45/figure_2","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the dielectric function ε₂ of Pt and PtO₂ as a function of photon energy in electron volts (eV). The data points for Pt follow a Drude-Lorentz model, while those for PtO₂ follow a Tauc-Lorentz model.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Photon energy (eV) | Dielectric function ε₂: Pt (Drude-Lorentz) | Dielectric function ε₂: PtO2 (Tauc-Lorentz) |\\n|---|---|---|\\n| 0.7 | 100 | 0 |\\n| 1 | 72 | 0 |\\n| 2 | 21 | 2 |\\n| 3 | 11 | 6 |\\n| 4 | 7 | 9 |\\n| 5 | 5 | 8 |\\n| 6 | 4 | 6 |\\n| 6.5 | 5.4 | 4.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Platinum (Pt) is the conductor. In the plot, Pt absorbs light very strongly at low photon energies, which happens when a material has lots of free electrons. High density of free electrons is a defining characteristic of conductive materials.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"PtO₂ has a band gap. The ε₂ response stays low at low photon energies and then shows a clear onset of stronger absorption only above a threshold energy, which is characteristic of interband absorption across a gap. This behavior is characteristic of semiconductors.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Pt.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 3.5 eV.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":3,"width":598,"height":463}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":603,"height":472,"image_format":"jpeg","image_sha256":"effd1e261b3eeb9796130e692b3a893083c4ab7e509a274e067bd6105463310d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_49_figure_3.jpg","caption":"Figure 3. XPS spectra of a,c) Mo 3d and b,d) S 2p for the as-deposited $\\mathrm{MoS_2}$ film on $\\mathrm{SiO_2}$ a,b) before and c,d) after in situ sulfurization at $300^{\\circ}C$ with $\\mathsf{H}_2\\mathsf{S}$ TEM images (left and right down) and SAED pattern (right up) of $\\mathrm{MoS_2}$ deposited onto CNTs e) before and f) after in situ sulfurization at $300^{\\circ}C$ with $\\mathsf{H}_2\\mathsf{S}$ The green arcs indicate graphite carbon, while the red ones indicate the 2H $\\mathrm{MoS_2}$ The yellow mark in (e) suggests the as-deposited amorphous $\\mathrm{MoS_2}$ film, while the lattice fringes in (f) suggest the (002) plane of crystalline $\\mathrm{MoS_2}$ layers.","id":"train/atomic-layer-deposition/experimental-usecase/49/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/49/figure_3","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS Deconvolution (a–d):The figure presents a detailed analysis of the chemical and structural effects of in situ sulfurization (annealing in H₂S at 300 °C) on ALD-grown MoS₂ films.As-deposited film, The initial film shows a mixed chemical state. Panel (a) reveals a dominant Mo⁶⁺ component (purple peak), typically associated with MoO₃ or residual precursor species, along with the desired Mo⁴⁺ signal.\"},{\"panel_id\":\"b\",\"text\":\"This spectra displays a strong S⁰/S₂²⁻ contribution (yellow peak), indicating excess elemental sulfur or polysulfide species.\"},{\"panel_id\":\"c\",\"text\":\"After sulfurization : The sulfurization treatment significantly improves film stoichiometry. Panel (c) shows that the Mo⁶⁺ component is nearly eliminated, leaving a sharp and dominant Mo⁴⁺ doublet characteristic of MoS₂.\"},{\"panel_id\":\"d\",\"text\":\"This image similarly shows a strong reduction of defect-related sulfur species, with the spectrum now dominated by the S²⁻ lattice peak, confirming improved chemical purity and sulfide formation.\"},{\"panel_id\":\"e\",\"text\":\"The figure displays high-resolution transmission electron microscopy (HRTEM) images of layered materials, with inset diffraction patterns indicating crystalline structures.\"},{\"panel_id\":\"f\",\"text\":\"The figure displays high-resolution transmission electron microscopy (HRTEM) images of layered materials, with inset diffraction patterns indicating crystalline structures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Intensity (a. u.) |\\n|---|---|\\n| 240 | Mo6+ |\\n| 235 | Mo4+ |\\n| 230 | S0/S2- |\\n| 225 | S2- |\\n| 168 | S0/S2- |\\n| 164 | S2- |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Intensity (a. u.) |\\n|---|---|\\n| 168 | S0/S2- |\\n| 164 | S2- |\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The as-deposited film (panel a) contains a large fraction of Mo⁶⁺ species (oxide-related defects), which act as scattering centers and charge trap states that degrade electron mobility. The sulfurization step (panel c) is essential because it chemically reduces these oxidized defects, converting insulating or defective MoOₓ regions into the semiconducting Mo⁴⁺ (MoS₂) phase required for efficient charge transport.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Sulfurization reduces Mo⁶⁺ oxides (Mo-O) to Mo⁴⁺ sulfides (Mo-S) and converts S⁰/S₂²⁻ species to S²⁻, improving stoichiometry. Structurally, it transforms the film from amorphous (no lattice fringes) to crystalline 2H-MoS₂, evident in the appearance of (002) lattice planes and sharp hexagonal SAED rings.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sulfurized crystalline film is preferable due to its better stoichiometry, higher crystallinity, and more active basal planes. The trade-off is the added thermal budget (300°C) and process complexity of an in-situ or post-deposition anneal, which may not be compatible with temperature-sensitive substrates.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The S₂²⁻ species are chemically reactive and typically reside at grain boundaries or surface sites. If retained in the film, these excess sulfur species can react with contact metals such as Ag or Cu to form metal sulfides (e.g., Ag₂S) at the interface. This reaction increases contact resistance and can lead to electrode corrosion and long-term device failure. The sulfurization step removes this excess sulfur, stabilizing the metal–semiconductor interface.\"}]}]","bbox":[{"panel_id":"a","x":48,"y":6,"width":230,"height":284},{"panel_id":"b","x":281,"y":4,"width":228,"height":279},{"panel_id":"c","x":4,"y":282,"width":277,"height":357},{"panel_id":"d","x":278,"y":287,"width":232,"height":353},{"panel_id":"e","x":520,"y":1,"width":479,"height":318},{"panel_id":"f","x":520,"y":327,"width":480,"height":311}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/Shen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1002,"height":642,"image_format":"jpeg","image_sha256":"04647c06037bbbbc209abff1966342a0587682d9b879224bd7e16f3e8e575dd0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_1.jpg","caption":"Fig. 1. FTIR spectra of the initial TiN surface terminated with $\\mathrm{NH}_3$ . species during the third TDMAT exposure at $152^{\\circ}\\mathrm{C}$ . The FTIR spectra have been displaced for clarity in presentation.","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_1","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents stacked FTIR spectra of an initially NH₃-terminated TiN surface recorded during the third TDMAT exposure at 152 °C. With increasing TDMAT exposure from 0 to 33 Torr·min, the N–H stretching feature near ~3300 cm⁻¹ decreases in relative intensity. Concurrently, strong C–H stretching bands appear and grow in the 2800–3000 cm⁻¹ region. The spectra are vertically offset, but the systematic evolution of these bands indicates progressive surface modification during exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Frequency (cm⁻¹) | Infrared Absorbance | Feature |\\n|---|---|---|\\n| 3350 | 0.82 | N–H stretching region (low exposure) |\\n| 2950 | 0.90 | C–H stretch onset |\\n| 2920 | 1.05 | C–H asymmetric stretch (increasing exposure) |\\n| 2850 | 0.98 | C–H symmetric stretch |\\n| 2920 | 1.30 | C–H asymmetric stretch (33 Torr·min) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As TDMAT exposure increases, the N–H stretching band near ~3300 cm⁻¹ decreases in relative intensity. At the same time, new and stronger C–H stretching features appear between ~2800 and 3000 cm⁻¹. This shift indicates a change in the dominant surface-bound species during exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The C–H stretching region between ~2800 and 3000 cm⁻¹.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"C–H stretching vibrations are characteristic of organic ligands containing methyl or alkyl groups. The growth of these bands indicates the presence of carbon-containing surface species following TDMAT exposure. Their appearance coincides with increased exposure, suggesting accumulation of precursor-derived fragments.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, because the figure does not show saturation behavior as a function of exposure time or cycles.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":1,"width":670,"height":633}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":672,"height":636,"image_format":"jpeg","image_sha256":"78ced29b5c3fcbea11f2783271754ce826f8fd33970a1c34b2331d865c28ce1b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_2.jpg","caption":"Fig. 2. FTIR spectra of the initial TiN surface terminated with $\\mathrm{Ti(N(CH_3)_2)_x}^*$ species during the fourth $\\mathrm{NH_3}$ exposure at $152^{\\circ}\\mathrm{C}$ . The FTIR spectra are again offset for clarity in presentation.","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_2","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents stacked FTIR spectra of a TiN surface terminated with Ti(N(CH₃)₂)ₓ species during the fourth NH₃ exposure at 152 °C. As the NH₃ dose increases from 0 to 3600 Torr·min, N–H stretching features in the ~3400–3200 cm⁻¹ region grow in intensity, while C–H stretching bands in the ~3000–2800 cm⁻¹ region diminish. These opposing trends indicate replacement of methyl-containing ligands by NHₓ species on the surface. The vertical offsets emphasize qualitative spectral evolution rather than absolute absorbance.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Frequency region (cm⁻¹) | Vibrational assignment | Change with NH3 exposure |\\n|-------------------------|------------------------|--------------------------|\\n| ~3400–3200 | N–H stretches | Increase with NH3 exposure, strongest at high doses |\\n| ~3000–2800 | C–H stretches | Decrease with increasing NH3 exposure |\\n| 3800–2600 | Baseline region | Spectra vertically offset for clarity, not quantitative |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"NH₃ exposure dose (Torr·min).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Stronger N–H bands at high exposure\\n-Weaker C–H bands at high exposure\\n-Clearer NH₃-induced surface modification\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"NHₓ-terminated species.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":666,"height":631}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":669,"height":636,"image_format":"jpeg","image_sha256":"b4e069a6132c1affd9432df1de14e61b1763956660df5acbc23c894f46274bfc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_52_figure_8.jpg","caption":"Figure 8. Raman measurements for $\\mathrm{LiCoO_2}$ annealed at $700^{\\circ}\\mathrm{C}$ for 6 minutes compared to as-deposited $\\mathrm{LiCoO_2}$ and the theoretical spectrum of $\\mathrm{Co_3O_4}$ . The used Co:Li dosing ratio was 2:1 $(x = 2)$ .","id":"train/atomic-layer-deposition/experimental-usecase/52/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/52/figure_8","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays Raman spectra of LiCoO₂ in two states: 'as-deposited' and 'annealed'. Peaks at 486 cm⁻¹, 520 cm⁻¹, and 596 cm⁻¹ are labeled, along with a Si peak at 520 cm⁻¹\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Raman shift, cm⁻¹ | Peak assignment | LiCoO₂ as-deposited | LiCoO₂ annealed |\\n|---|---|---|---|\\n| 200 | baseline | 0.05 | 0.05 |\\n| 486 | LiCoO₂ HT | 0.25 | 0.35 |\\n| 520 | Si | 1.0 | 0.85 |\\n| 596 | LiCoO₂ HT | 0.45 | 0.70 |\\n| 800 | baseline | 0.05 | 0.08 |\\n| 1000 | baseline | 0.05 | 0.08 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"700 C for 6 minutes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Black is LiCoO2 as deposited and red is LiCoO2 annealed.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The X ray diffraction peak near 19 degrees can overlap between Co3O4 (111) and LiCoO2 (003), so XRD alone cannot unambiguously identify the phase. Raman provides additional phase specific information. In particular, the presence of LiCoO2 high temperature phase modes near 486 and 596 cm to the power of minus 1 supports crystalline LiCoO2 after annealing, and the paper notes that a distinct Co3O4 peak near 693 cm to the power of minus 1 would be expected if a significant Co3O4 fraction were present.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":661,"height":467}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/Donders et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":666,"height":475,"image_format":"jpeg","image_sha256":"a77242ddd29e7e799617e39dcf5e60b01b162484a9074ecb2757da6f56a41b90","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_57_figure_4.jpg","caption":"Figure 4. (a) Contour plot of XRD patterns measured from CsI films on which $\\mathrm{PbI}_2$ was deposited with different number of cycles at $75^{\\circ}C$ b Relative intensity (peak area) of different phases in the patterns from panel (a) as a function of the number of $\\mathrm{PbI}_2$ deposition cycles. (c) Contour plot of XRD patterns measured during an anneal of the CsI film after $3000\\mathrm{PbI}_2$ deposition cycles at $75^{\\circ}C$ d) XRD patterns of CsI films after 3000 and $4000\\mathrm{PbI}_2$ deposition cycles at $100^{\\circ}\\mathrm{C}$ The as-deposited CsI film pattern is also shown for reference. (e) Contour plot of XRD patterns measured from CsI films on which $\\mathrm{PbI}_2$ was deposited with different number of cycles at $100^{\\circ}\\mathrm{C}$ (f) Relative intensity (peak area) of different phases in the patterns from panel (e) as a function of the number of $\\mathrm{PbI}_2$ deposition cycles. CsI films $(100\\mathrm{nm})$ were deposited at $150^{\\circ}C$ with 300 cycles. The pulse durations were $1.5~s$ for $\\mathrm{Cs(btsa)}$ and $1.0~\\mathrm{s}$ for $\\mathrm{SnI}_4$ and purge durations were $1.0~\\mathrm{s}$ In the $\\mathrm{PbI}_2$ deposition, the durations of the precursor pulses were 0.8 and $2.0~\\mathrm{s}$ for $\\mathrm{Pb(btsa)}_2$ and $\\mathrm{SnI}_4,$ respectively, whereas purge durations were $1.0~\\mathrm{s}$","id":"train/atomic-layer-deposition/experimental-usecase/57/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/57/figure_4","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"},{"panel_id":"e","label":"multi spectra chart"},{"panel_id":"f","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A spectra chart displaying XRD intensity as a function of 2θ for CsI films after deposition of PbI₂ with increasing ALD cycles at 75 °C. The contour plot reveals the progressive evolution of crystalline phases with PbI₂ loading.\"},{\"panel_id\":\"b\",\"text\":\"A line chart showing changes in relative XRD peak intensity (peak area) as a function of PbI₂ deposition cycles at 75 °C. This plot quantifies the growth, saturation, and transition of different phases identified in panel (a).\"},{\"panel_id\":\"c\",\"text\":\"A spectra chart displaying XRD intensity versus 2θ measured during annealing of the CsI film after 3000 PbI₂ deposition cycles at 75 °C. The data capture thermally induced phase transformations and enhanced crystallinity during the anneal.\"},{\"panel_id\":\"d\",\"text\":\"A spectra chart showing XRD intensity as a function of 2θ for CsI films after 3000 and 4000 PbI₂ deposition cycles at 100 °C, together with the as-deposited CsI reference. The patterns highlight temperature-dependent differences in phase formation and stability.\"},{\"panel_id\":\"e\",\"text\":\"A spectra chart displaying XRD intensity versus 2θ for CsI films with increasing PbI₂ deposition cycles at 100 °C. Compared to 75 °C, the phase evolution occurs more rapidly, indicating enhanced reaction kinetics.\"},{\"panel_id\":\"f\",\"text\":\"A line chart showing changes in relative XRD peak intensity (peak area) as a function of PbI₂ deposition cycles at 100 °C. The results confirm faster conversion and the eventual accumulation of excess PbI₂ at higher cycle numbers.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Diffraction Peak (2θ°) | Phase | Color Code |\\n|-----------------------|-------|------------|\\n| 9.8° | δ-CsPbI₃ | Yellow |\\n| 12.6° | PbI₂ (6H) | Pink |\\n| 13.1° | δ-CsPbI₃ | Yellow |\\n| 14.3° | γ-CsPbI₃ | Black |\\n| 20.3° | γ-CsPbI₃ | Black |\\n| 25.4° | PbI₂ (6H) | Pink |\\n| 25.8° | δ-CsPbI₃ | Yellow |\\n| 26.5° | δ-CsPbI₃ | Yellow |\\n| 27.6° | CsI | Blue |\\n| 28.5° | γ-CsPbI₃ | Black |\\n| 28.8° | γ-CsPbI₃ | Black |\\n| 34.2° | δ-CsPbI₃ | Yellow |\\n| 38.4° | PbI₂ (6H) | Pink |\\n| 39.5° | CsI | Blue |\\n| 44.5° | PbI₂ (6H) | Pink |\\n| 49.1° | CsI | Blue |\"},{\"panel_id\":\"b\",\"text\":\"| PbI₂ Deposition Cycles | XRD Intensity (%) | Phase (75 °C) |\\n|----------------------:|-----------------:|---------------|\\n| 0 | 100 | CsI |\\n| 0 | 0 | γ-CsPbI₃ |\\n| 0 | 0 | δ-CsPbI₃ |\\n| 0 | 0 | PbI₂ |\\n| 500 | 50 | CsI |\\n| 500 | 50 | γ-CsPbI₃ |\\n| 500 | 0 | δ-CsPbI₃ |\\n| 500 | 0 | PbI₂ |\\n| 1500 | 27 | CsI |\\n| 1500 | 18 | γ-CsPbI₃ |\\n| 1500 | 42 | δ-CsPbI₃ |\\n| 1500 | 12 | PbI₂ |\\n| 2500 | 23.5 | CsI |\\n| 2500 | 9 | γ-CsPbI₃ |\\n| 2500 | 43 | δ-CsPbI₃ |\\n| 2500 | 24 | PbI₂ |\\n| 3000 | 16 | CsI |\\n| 3000 | 0 | γ-CsPbI₃ |\\n| 3000 | 47 | δ-CsPbI₃ |\\n| 3000 | 35 | PbI₂ |\"},{\"panel_id\":\"c\",\"text\":\"| Diffraction Peak (2θ°) | Phase | Color Code |\\n|-----------------------|-------|------------|\\n| ∼10.0° | δ-CsPbI₃ | Yellow |\\n| ∼12.6° | PbI₂ (6H) | Pink |\\n| ∼13.1° | δ-CsPbI₃ | Yellow |\\n| ∼14.3° | γ-CsPbI₃ | Black |\\n| ∼20.3° | γ-CsPbI₃ | Black |\\n| ∼25.4° | PbI₂ (6H) | Pink |\\n| ∼25.8° | δ-CsPbI₃ | Yellow |\\n| ∼26.5° | δ-CsPbI₃ | Yellow |\\n| ∼27.2° | δ-CsPbI₃ | Yellow |\\n| ∼27.8° | CsI | Light Blue |\\n| ∼28.5° | γ-CsPbI₃ | Black |\\n| ∼29.0° | γ-CsPbI₃ | Black |\\n| ∼31.5° | δ-CsPbI₃ | Yellow |\\n| ∼34.1° | PbI₂ (6H) | Pink |\"},{\"panel_id\":\"d\",\"text\":\"| Diffraction Peak (2θ°) | Phase | Color Code |\\n|-----------------------|-------|------------|\\n| ∼9.8° | δ-CsPbI₃ | Yellow |\\n| ∼13.0° | δ-CsPbI₃ | Yellow |\\n| ∼14.3° | γ-CsPbI₃ | Black |\\n| ∼20.2° | γ-CsPbI₃ | Black |\\n| ∼25.8° | δ-CsPbI₃ | Yellow |\\n| ∼26.5° | δ-CsPbI₃ | Yellow |\\n| ∼27.2° | δ-CsPbI₃ | Yellow |\\n| ∼27.6° | CsI | Blue |\\n| ∼28.3° | γ-CsPbI₃ | Black |\\n| ∼28.9° | γ-CsPbI₃ | Black |\\n| ∼31.5° | δ-CsPbI₃ | Yellow |\\n| ∼41.0° | γ-CsPbI₃ | Black |\\n| ∼49.0° | CsI | Blue |\"},{\"panel_id\":\"e\",\"text\":\"| Diffraction Peak (2θ°) | Phase | Color Code |\\n|-----------------------|-------|------------|\\n| ∼9.8° | δ-CsPbI₃ | Yellow |\\n| ∼13.1° | δ-CsPbI₃ | Yellow |\\n| ∼14.3° | γ-CsPbI₃ | Black |\\n| ∼20.3° | γ-CsPbI₃ | Black |\\n| ∼25.8° | δ-CsPbI₃ | Yellow |\\n| ∼26.5° | δ-CsPbI₃ | Yellow |\\n| ∼27.2° | δ-CsPbI₃ | Yellow |\\n| ∼27.7° | CsI | Blue |\\n| ∼28.5° | γ-CsPbI₃ | Black |\\n| ∼29.0° | γ-CsPbI₃ | Black |\\n| ∼31.5° | δ-CsPbI₃ | Yellow |\\n| ∼38.0° | δ-CsPbI₃ | Yellow |\\n| ∼41.2° | γ-CsPbI₃ | Black |\\n| ∼49.1° | CsI | Blue |\"},{\"panel_id\":\"f\",\"text\":\"| PbI₂ Deposition Cycles | XRD Intensity (%) | Phase (100 °C) |\\n|----------------------:|-----------------:|----------------|\\n| 0 | 0 | γ-CsPbI₃ |\\n| 0 | 100 | CsI |\\n| 0 | 0 | δ-CsPbI₃ |\\n| 500 | 50 | γ-CsPbI₃ |\\n| 500 | 50 | CsI |\\n| 500 | 0 | δ-CsPbI₃ |\\n| 1000 | 70 | γ-CsPbI₃ |\\n| 1000 | 30 | CsI |\\n| 1000 | 0 | δ-CsPbI₃ |\\n| 1500 | 85 | γ-CsPbI₃ |\\n| 1500 | 15 | CsI |\\n| 1500 | 0 | δ-CsPbI₃ |\\n| 2000 | 97 | γ-CsPbI₃ |\\n| 2000 | 2.7 | CsI |\\n| 2000 | 0 | δ-CsPbI₃ |\\n| 2500 | 98.5 | γ-CsPbI₃ |\\n| 2500 | 0.6 | CsI |\\n| 2500 | 0 | δ-CsPbI₃ |\\n| 3000 | 100 | γ-CsPbI₃ |\\n| 3000 | 0 | CsI |\\n| 3000 | 0 | δ-CsPbI₃ |\\n| 3500 | 52 | γ-CsPbI₃ |\\n| 3500 | 0 | CsI |\\n| 3500 | 48 | δ-CsPbI₃ |\\n| 4000 | 0 | γ-CsPbI₃ |\\n| 4000 | 0 | CsI |\\n| 4000 | 100 | δ-CsPbI₃ |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A Phase Transition to the Delta Phase. Continuing to 4000 cycles destroys the useful Gamma phase and converts it into the useless Delta phase.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Because it is electrically insulating. The Delta phase does not conduct charge effectively, leading to high internal resistance and zero power output.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Deposit a CsI film on a substrate via ALD.\\n\\n2. Deposit 2000 cycles of PbI₂ via ALD at 100°C.\\n\\n3. Perform an X-ray diffraction (XRD) scan on the bilayer stack.\\n\\n4. Deconvolute the XRD pattern to identify phases and integrate their peak areas.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The low-temperature ALD route is necessary for temperature-sensitive substrates. Traditional solution processing requires high annealing temperatures to crystallize the perovskite, which would damage the substrate. ALD enables phase formation via interfacial diffusion at much lower temperatures.\"}]}]","bbox":[{"panel_id":"a","x":11,"y":18,"width":637,"height":423},{"panel_id":"b","x":675,"y":13,"width":500,"height":422},{"panel_id":"c","x":8,"y":436,"width":637,"height":425},{"panel_id":"d","x":684,"y":448,"width":493,"height":417},{"panel_id":"e","x":9,"y":872,"width":631,"height":423},{"panel_id":"f","x":665,"y":873,"width":511,"height":418}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/Weia et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":1180,"height":1295,"image_format":"jpeg","image_sha256":"68afe12a713064dea26fbb7589e8ff6afb6a5abe4e1da338d2c65998f63c9643","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_64_fig_6.jpg","caption":"FIG. 6. XRD patterns of ruthenium films grown from $\\mathrm{Ru(thd)}_3$ and $\\mathrm{RuCp}_2$ on iridium at $250^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/64/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/64/fig_6","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows XRD patterns of ruthenium films grown from RuCp2 and Ru(thd)3 on iridium at 250 °C, highlighting the preferred crystal orientations. Films from RuCp2 are slightly (101)-oriented, while films from Ru(thd)3 show a slightly preferred (002) orientation, indicating that the choice of precursor influences the crystallinity of the films.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (°) | Intensity / Peak Assignment |\\n|---|---|\\n| 35 | RuCp₂ (101) |\\n| 37 | Ru (100) |\\n| 39 | Ir (111) |\\n| 41 | Ru (002) |\\n| 43 | Ru (101) |\\n| 45 | Ir (200) |\\n| 47 | Ru (102) |\\n| 50 | Ru(thd)₃ (002) |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The crystal orientation of ruthenium films affects properties such as conductivity, adhesion, and surface reactivity, which are critical for applications in microelectronics and catalysis. By choosing the appropriate precursor, one can control the film’s crystal structure to optimize these properties for specific device performance or chemical applications.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"RuCp2 films are slightly (101)-oriented, while Ru(thd)3 films are slightly (002)-oriented.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The XRD patterns show that films grown from RuCp2 and Ru(thd)3 have different preferred orientations, indicating that the precursor influences the crystal structure during deposition.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ru(thd)₃: Preferred (002) orientation, RuCp₂: Slightly (101) orientation\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":525,"height":352}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"64","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":525,"height":352,"image_format":"jpeg","image_sha256":"d935201cae345ca728fdbc559ac2d1eedfcadc15f095b9385f4a4a34d3b64fca","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_69_FIG8.jpg","caption":"FIG. 8. Comparison between the respective FTIR spectra of the materials with AIO-PO ratios increasing from 1-1 to 1-6.","id":"train/atomic-layer-deposition/experimental-usecase/69/FIG8","sample_id":"atomic-layer-deposition/experimental-usecase/69/FIG8","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays absorbance spectra for different samples labeled AIO - PO (1-6), AIO - PO (1-3), and AIO - PO (1-1) across a range of wavenumbers.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Wavenumber (cm⁻¹) |\\n|---|---|\\n| AlO - PO (1-6) | Peaks at 450, 1000, 1150 |\\n| AlO - PO (1-3) | Peaks at 450, 700, 1000, 1150 |\\n| AlO - PO (1-1) | Peaks at 450, 700, 1150 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There are two regions: between 950 and 1300 cm⁻¹, and between 400 and 550 cm⁻¹.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 625 and 900 cm⁻¹.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Three.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 8 shows that increasing the number of PO cycles leads to a pronounced increase in the intensity of bands associated with P–O interactions, most notably the peaks around 1000 and 1200 cm⁻¹, which are attributed to P–O–P bonding. Simultaneously, the intensity of bands related to Al–O and Al–O–P bonds decreases, reflecting the lower relative aluminum content. Together, these spectral changes indicate a transition from a P-doped aluminum oxide toward an ortho- or polyphosphate material.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":658,"height":669}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/Ruben Blomme et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"69","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":667,"height":670,"image_format":"jpeg","image_sha256":"981b0f726e0e63b1ff222bfa1f94bee410881165a863de55cb3afdb1b3d2ad93","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_69_FIG9_a.jpg","caption":"FIG. 9. XPS spectra for the materials grown with a different supercycle ratio measured at the surface of the sample. Binding energy calibration was performed on the basis of the C—C/C—H component of the C 1s peak.","id":"train/atomic-layer-deposition/experimental-usecase/69/FIG9_a","sample_id":"atomic-layer-deposition/experimental-usecase/69/FIG9_a","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the XPS spectra of three samples (AlO - PO (1-1), AlO - PO (1-3), AlO - PO (1-6)) for the Al 2p region.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Binding Energy (eV) |\\n|---|---|\\n| AlO - PO (1-6) | Peak at 76 |\\n| AlO - PO (1-3) | Peak at 75 |\\n| AlO - PO (1-1) | Peak at 74 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Al 2p peak shifts slightly toward higher binding energies, from about 74.9 to 75.5 eV, which is consistent with an increasing phosphorus content in the material.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"With more PO cycles, the Al 2p peak intensity decreases while the P 2p and O 1s intensities increase, reflecting a transition toward a more phosphate-like material.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The O 1s peak shows increased broadening due to the growth of a higher-binding-energy shoulder attributed to bridging oxygen (P–O–P), indicating phosphate formation.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The P 2p envelope peak shifts toward higher binding energies as the phosphorus content increases, a behavior associated with a higher fraction of P=O bonding.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":398,"height":481}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG9_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG9_a.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/Ruben Blomme et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"69","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":405,"height":488,"image_format":"jpeg","image_sha256":"c71ec6f325274cfb4cdfcf0dd5c717516da90880e7818970cc45303251619c10","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_12.jpg","caption":"Figure 12. Green $\\mathsf{Tb}^{3 + }$ EL emission from different ALD-grown nanolaminatet structures consisting of $\\mathsf{Al}_2\\mathsf{O}_3$ and $\\mathsf{Tb}_2\\mathsf{O}_3$ layers, relevant for use in luminescent displays. Republished with permission from Ref. [299], 2018, Optica publishing group.","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_12","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_12","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":4,"width":642,"height":449},{"panel_id":"b","x":651,"y":8,"width":338,"height":445}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":992,"height":456,"image_format":"jpeg","image_sha256":"64f9b7ab57cd456e93cda4d7f5c64f08cce2b9dbefc8672afd209fc106846295","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_9.jpg","caption":"Figure 9. XRD patterns for various $R$ -based quaternary oxide thin films deposited by ALD: $\\mathrm{La(Ni,Cu)O_3}$ [205] (Reproduced with permission, 2020, Royal Society of Chemistry) (La,Sr)CoO $_3$ .[32] (Reproduced with permission, 2015, Royal Society of Chemistry) (La,Sr)CuO $_3$ .[201] (Reproduced with permission, 2018, Royal Society of Chemistry.) and (La,Sr)MnO $_3$ .[151] (Reproduced with permission, 2008, Elsevier).","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_9","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"spectra chart"},{"panel_id":"c","label":"spectra chart"},{"panel_id":"d","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XRD scans (log intensity) of LaNiCuO3 in a narrow 2θ window for different Cu contents, showing how the peak shape changes with composition.\"},{\"panel_id\":\"b\",\"text\":\"XRD pattern of LaSrCoO3 (noted 700 C), showing multiple diffraction peaks across a wide 2θ range.\"},{\"panel_id\":\"c\",\"text\":\"XRD pattern of LaSrCuO3 with labeled reflections, indicating an oriented diffraction signature.\"},{\"panel_id\":\"d\",\"text\":\"XRD patterns of LaSrMnO3 under different substrate and annealing conditions, comparing peak positions and relative intensities.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (°) | 0% Cu (Norm.) | 10% Cu (Norm.) | 20% Cu (Norm.) | 30% Cu (Norm.) | 40+% Cu (Norm.) |\\n|---|---|---|---|---|---|\\n| 46.8 (Shoulder) | 0.65 | 0.45 | 0.30 | 0.15 | 0.05 |\\n| 47.5 (Valley) | 0.40 | 0.35 | 0.30 | 0.20 | 0.10 |\\n| 48.0 (Main Peak) | 1.00 | 1.00 | 1.00 | 1.00 | 1.00 |\\n| 49.0 | 0.10 | 0.10 | 0.10 | 0.10 | 0.10 |\"},{\"panel_id\":\"b\",\"text\":\"| 2θ (°) | Intensity (Norm.) | Feature |\\n|---|---|---|\\n| 23.5 | 0.25 | Minor Peak |\\n| 33.5 | 1.00 | Main Peak |\\n| 41.0 | 0.15 | Minor Peak |\\n| 47.8 | 0.20 | Minor Peak |\\n| 59.5 | 0.15 | Minor Peak |\"},{\"panel_id\":\"c\",\"text\":\"| 2θ (°) | Intensity (Norm.) | Assignment |\\n|---|---|---|\\n| 13.0 | 0.15 | LSCO(002) |\\n| 23.0 | 1.00 | Substrate () |\\n| 25.5 | 0.45 | LSCO(004) |\\n| 41.5 | 0.40 | LSCO(006) |\\n| 47.5 | 1.00 | Substrate (*) |\\n| 55.5 | 0.35 | LSCO(008) |\"},{\"panel_id\":\"d\",\"text\":\"| 2θ (°) | on Si₃N₄ (Green) | +3hr 800°C (Black) | on YSZ (Red) | +3hr 800°C (Blue) |\\n|---|---|---|---|---|\\n| 28.0 | 0.05 | 0.05 | 0.20 | 0.25 |\\n| 33.0 | 1.00 | 0.30 | 0.10 | 0.15 |\\n| 36.5 | 0.20 | 0.80 | 0.85 | 0.90 |\\n| 38.5 | 0.10 | 1.00 | 1.00 | 1.00 |\\n| 43.0 | 0.05 | 0.05 | 0.25 | 0.15 |\\n| 69.0 | 1.00 | 0.25 | 0.20 | 0.10 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It suggests a preferred orientation, consistent with a textured or oriented film rather than a fully random polycrystal.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Heating is commonly used to drive crystallization and phase formation in complex oxides. Post treatment XRD then checks whether the intended crystalline phase forms and whether secondary phases or poor crystallinity remain.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It decreases relative to the sharp peak, and the patterns increasingly converge toward a sharper dominant peak.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Phase purity strongly influences electrical and ionic transport\\n\\nCrystallinity and texture can affect surface reactivity and oxygen exchange\\n\\nSecondary phases can degrade stability and performance\"}]}]","bbox":[{"panel_id":"c","x":4,"y":385,"width":489,"height":411},{"panel_id":"b","x":502,"y":5,"width":492,"height":375},{"panel_id":"a","x":1,"y":2,"width":486,"height":372},{"panel_id":"d","x":511,"y":385,"width":482,"height":409}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":997,"height":795,"image_format":"jpeg","image_sha256":"dc85afe42606ea21da8d20ac4423a35ff4fcf4191033d8f264b609f9b7a21297","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_9.jpg","caption":"FIG. 9. Normalized pressure of precursors and ligand species at the downstream position of the tubular reactor: (a) Single dose, $t_d = 0.2 \\text{s}$ , $\\beta_1 = 10^{-2}$ and (b) Single dose, $t_d = 0.4 \\text{s}$ , $\\beta_2 = 10^{-3}$ . (b) Microtissue sequence, $\\beta_{1b} = 10^{-2}$ and (d) microdose sequence, $\\beta_{02} = 10^{-3}$ . A high reaction probability leads to a temporal separation between the precursor and ligand peaks. In all cases, the average precursor pressure at the inlet is $p_0 = 50 \\text{mTorr}$ .","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_9","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_9","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A line chart showing the normalized pressure of ligand and precursor species over time after a single dose, t_d = 0.2 s, β_1 = 10^-2.\"},{\"panel_id\":\"b\",\"text\":\"A line chart showing the normalized pressure of ligand and precursor species over time after a single dose, t_d = 0.4 s, β_1 = 10^-3.\"},{\"panel_id\":\"c\",\"text\":\"A line chart showing the normalized pressure of ligand and precursor species over time after microdose sequence, β_01 = 10^-2.\"},{\"panel_id\":\"d\",\"text\":\"A line chart showing the normalized pressure of ligand and precursor species over time after microdose sequence, β_02 = 10^-3.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Norm. pressure (p/p0) Ligand | Norm. pressure (p/p0) Precursor |\\n|---|---|---|\\n| 0.0 | 0.0 | 0.0 |\\n| 0.2 | 0.0 | 0.0 |\\n| 0.4 | 0.4 | 0.0 |\\n| 0.6 | 0.2 | 0.2 |\\n| 0.8 | 0.1 | 0.1 |\\n| 1.0 | 0.0 | 0.0 |\\n| 1.2 | 0.0 | 0.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Norm. pressure (p/p0) Precursor | Norm. pressure (p/p0) Ligand |\\n|---|---|---|\\n| 0.0 | 0.0 | 0.0 |\\n| 0.5 | 0.35 | 0.25 |\\n| 1.0 | 0.75 | 0.1 |\\n| 1.5 | 0.0 | 0.0 |\"},{\"panel_id\":\"c\",\"text\":\"| Time (s) | Norm. pressure (p/p0) Precursor | Norm. pressure (p/p0) Ligand |\\n|---|---|---|\\n| 0.0 | 0.0 | 0.0 |\\n| 1.0 | 0.08 | 0.14 |\\n| 2.0 | 0.02 | 0.02 |\\n| 3.0 | 0.14 | 0.0 |\\n| 4.0 | 0.16 | 0.0 |\\n| 5.0 | 0.0 | 0.0 |\"},{\"panel_id\":\"d\",\"text\":\"| Time (s) | Norm. pressure (p/p0) Precursor | Norm. pressure (p/p0) Ligand |\\n|---|---|---|\\n| 0.0 | 0.0 | 0.0 |\\n| 1.0 | 0.08 | 0.08 |\\n| 2.0 | 0.01 | 0.02 |\\n| 3.0 | 0.05 | 0.02 |\\n| 4.0 | 0.15 | 0.03 |\\n| 5.0 | 0.0 | 0.0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.4 seconds.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"p_0 = 50 mTorr.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.2 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For high reaction probabilities, the precursor reacts rapidly upon entering the reactor, leading to immediate release of reaction by-products and an offset between the by-product signal and the arrival of unreacted precursor. As the reaction probability decreases, this temporal separation diminishes, and precursor and by-product signals increasingly overlap. When a single dose is resolved into a sequence of microdoses, this effect becomes more pronounced: at high reaction probability, early microdoses are dominated by by-product signals followed by an abrupt transition to precursor-dominated signals, whereas at lower reaction probability both signals persist throughout the dosing sequence with a gradual transition.\"}]}]","bbox":[{"panel_id":"a","x":10,"y":13,"width":631,"height":316},{"panel_id":"b","x":15,"y":354,"width":626,"height":301},{"panel_id":"c","x":15,"y":677,"width":626,"height":304},{"panel_id":"d","x":10,"y":983,"width":632,"height":331}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":642,"height":1314,"image_format":"jpeg","image_sha256":"9ff0951f2d97c7524bd4946e951c5a0047f6c902239ba6db7e1104176dd47274","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_12_figure_10.jpg","caption":"Figure 10. Time-dependent distances of all three $\\mathrm{Hf - Cl}$ bonds of the adsorbed metal precursor complex for the last 2 ps of the simulation at 575 K. The first Cl atom dissociates from the complex at 8.4 ps, followed by the second Cl atom at 8.8 ps.","id":"train/atomic-layer-deposition/simulation-usecase/12/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/12/figure_10","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the variation of Hf-CI distance over time in Angstroms.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (ps) | Hf-CI 1 | Hf-CI 2 | Hf-CI 3 |\\n| --- | --- | --- | --- |\\n| 7.6 | 2.5 | 2.5 | 2.8 |\\n| 8.0 | 2.6 | 2.6 | 2.8 |\\n| 8.4 | 2.7 | 2.5 | 3.3 |\\n| 8.8 | 2.5 | 3.4 | 4.9 |\\n| 9.2 | 2.7 | 4.5 | 4.6 |\\n| 9.6 | 2.7 | 5.3 | 4.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately at 8.2 ps.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The distance for two of the three Hf-Cl bonds increases over time, while the distance for the third bond remains almost constant.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 5.3 Å.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Adsorption of the precursor leads to dissociation of additional Cl- ions.\"}]}]","bbox":[{"panel_id":"a","x":8,"y":3,"width":653,"height":477}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. Mukhopadhyay et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":667,"height":483,"image_format":"jpeg","image_sha256":"95562eb6a52d3d96a393c43e74f27fb076f6c61862521267ff8d9f24d698580e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_19_figure_4.jpg","caption":"Figure 4. Differences in oxygen-related gap states by ${ \\bf N } _ { 2 } { \\bf O }$ plasma reactant. Xps O 1s peaks of the (a) $\\mathrm { I n } _ { 2 } \\mathrm { O } _ { 3 } ,$ (b) $\\mathrm { G a } _ { 2 } \\mathrm { O } _ { 3 } ,$ and (c) $_ { \\mathrm { Z n O } }$ films.SE $\\left( \\varepsilon 2 \\right)$ and bandgap (inset) of the (d) $\\mathrm { I n } _ { 2 } \\mathrm { O } _ { 3 } ,$ (e) ${ \\mathrm { G a } } _ { 2 } { \\mathrm { O } } _ { 3 } ,$ and (f) ${ \\mathrm { Z n O } }$ fl ms. Schematic of the band structure of $( \\mathbf { g } )$ $\\mathrm { I n } _ { 2 } \\mathrm { O } _ { 3 } ,$ (h) ${ \\bf G a } _ { 2 } { \\bf O } _ { 3 } ,$ and (i) $\\mathrm { Z n O }$ extracted from SE analysis.","id":"train/atomic-layer-deposition/simulation-usecase/19/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/19/figure_4","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"},{"panel_id":"e","label":"multi spectra chart"},{"panel_id":"f","label":"multi spectra chart"},{"panel_id":"g","label":"band diagram"},{"panel_id":"h","label":"band diagram"},{"panel_id":"i","label":"band diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS O 1s spectra of indium oxide showing normalized intensity versus binding energy, resolved into In–OH, oxygen-deficient (O_def), and In–O components, comparing O₂ and N₂O plasma treatments.\"},{\"panel_id\":\"b\",\"text\":\"XPS O 1s spectra of gallium oxide showing Ga–OH, O_def, and Ga–O components, where N₂O plasma reduces the O_def shoulder relative to O₂ treatment.\"},{\"panel_id\":\"c\",\"text\":\"XPS O 1s spectra of zinc oxide showing Zn–OH, O_def, and Zn–O components, also indicating reduced oxygen deficiency after N₂O plasma exposure.\"},{\"panel_id\":\"d\",\"text\":\"Spectroscopic ellipsometry (SE) ε₂ spectra of indium oxide, showing a bandgap narrowing from 3.52 eV (O₂) to 3.44 eV (N₂O).\"},{\"panel_id\":\"e\",\"text\":\"Spectroscopic ellipsometry (SE) ε₂ spectra of gallium oxide, showing a bandgap widening from 4.53 eV (O₂) to 4.62 eV (N₂O).\"},{\"panel_id\":\"f\",\"text\":\"Spectroscopic ellipsometry (SE) ε₂ spectra of zinc oxide, showing an essentially invariant bandgap at ~3.14 eV regardless of plasma treatment.\"},{\"panel_id\":\"g\",\"text\":\"Schematic band structure of In₂O₃ extracted from spectroscopic ellipsometry (SE) analysis.\"},{\"panel_id\":\"h\",\"text\":\"Schematic band structure of Ga₂O₃ extracted from spectroscopic ellipsometry (SE) analysis.\"},{\"panel_id\":\"i\",\"text\":\"Schematic band structure of ZnO extracted from spectroscopic ellipsometry (SE) analysis.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding energy (eV) | Normalized intensity | Indium Oxide| Condition |\\n|--------------------|----------------------|----------------------|------------|\\n| 533 | 0.00 | O₂* 1 s (Ref) | In–OH |\\n| 533 | 0.00 | N₂O* 1 s | In–OH |\\n| 533 | 0.00 | N₂O* 5 s | In–OH |\\n| 532 | 0.11 | O₂* 1 s (Ref) | In–OH |\\n| 532 | 0.11 | N₂O* 1 s | In–OH |\\n| 532 | 0.11 | N₂O* 5 s | In–OH |\\n| 531 | 0.20 | O₂* 1 s (Ref) | O_(def) |\\n| 531 | 0.19 | N₂O* 1 s | O_(def) |\\n| 531 | 0.20 | N₂O* 5 s | O_(def) |\\n| 530 | 0.57 | O₂* 1 s (Ref) | O_(def) |\\n| 530 | 0.57 | N₂O* 1 s | O_(def) |\\n| 530 | 0.57 | N₂O* 5 s | O_(def) |\\n| 529 | — | O₂* 1 s (Ref) | In–O |\\n| 529 | 0.98 | N₂O* 1 s | In–O peak |\\n| 529 | 0.98 | N₂O* 5 s | In–O peak |\\n| 528 | 0.03 | O₂* 1 s (Ref) | In–O |\\n| 528 | 0.03 | N₂O* 1 s | In–O |\\n| 528 | 0.03 | N₂O* 5 s | In–O |\"},{\"panel_id\":\"b\",\"text\":\"| Binding energy (eV) | Normalized intensity | Gallium Oxide | Condition |\\n|--------------------|----------------------|----------------------|-----------------|\\n| 534 | 0.00 | O₂* 1 s (Ref) | Ga–OH |\\n| 534 | 0.01 | N₂O* 1 s | Ga–OH |\\n| 534 | 0.00 | N₂O* 5 s | Ga–OH |\\n| 533 | 0.05 | O₂* 1 s (Ref) | Ga–OH |\\n| 533 | 0.06 | N₂O* 1 s | Ga–OH |\\n| 533 | 0.04 | N₂O* 5 s | Ga–OH |\\n| 532 | 0.30 | O₂* 1 s (Ref) | O_(def) |\\n| 532 | 0.30 | N₂O* 1 s | O_(def) |\\n| 532 | 0.20 | N₂O* 5 s | O_(def) |\\n| 531 | 0.73 | O₂* 1 s (Ref) | Ga–O |\\n| 531 | 0.73 | N₂O* 1 s | Ga–O |\\n| 531 | 0.73 | N₂O* 5 s | Ga–O |\\n| 530 | 0.98 | O₂* 1 s (Ref) | Ga–O peak |\\n| 530 | 0.98 | N₂O* 1 s | Ga–O peak |\\n| 530 | 0.98 | N₂O* 5 s | Ga–O peak |\\n| 529 | 0.06 | O₂* 1 s (Ref) | Ga–O |\\n| 529 | 0.06 | N₂O* 1 s | Ga–O |\\n| 529 | 0.06 | N₂O* 5 s | Ga–O |\\n| 528 | — | O₂* 1 s (Ref) | — |\\n| 528 | — | N₂O* 1 s | — |\\n| 528 | — | N₂O* 5 s | — |\"},{\"panel_id\":\"c\",\"text\":\"| Binding energy (eV) | Normalized intensity | Zinc Oxide| Condition |\\n|--------------------|----------------------|----------------------|------------|\\n| 534 | 0.01 | O₂* 1 s (Ref) | Zn–OH |\\n| 534 | 0.00 | N₂O* 1 s | Zn–OH |\\n| 534 | 0.00 | N₂O* 5 s | Zn–OH |\\n| 533 | 0.05 | O₂* 1 s (Ref) | Zn–OH |\\n| 533 | 0.04 | N₂O* 1 s | Zn–OH |\\n| 533 | 0.04 | N₂O* 5 s | Zn–OH |\\n| 532 | 0.27 | O₂* 1 s (Ref) | O_(def) |\\n| 532 | 0.25 | N₂O* 1 s | O_(def) |\\n| 532 | 0.23 | N₂O* 5 s | O_(def) |\\n| 531 | 0.82 | O₂* 1 s (Ref) | Zn–O |\\n| 531 | 0.82 | N₂O* 1 s | Zn–O |\\n| 531 | 0.82 | N₂O* 5 s | Zn–O |\\n| 530 | 0.99 | O₂* 1 s (Ref) | Zn–O peak |\\n| 530 | 0.99 | N₂O* 1 s | Zn–O peak |\\n| 530 | 0.99 | N₂O* 5 s | Zn–O peak |\\n| 529 | 0.06 | O₂* 1 s (Ref) | Zn–O |\\n| 529 | 0.06 | N₂O* 1 s | Zn–O |\\n| 529 | 0.06 | N₂O* 5 s | Zn–O |\\n| 528 | — | O₂* 1 s (Ref) | Zn–O |\\n| 528 | — | N₂O* 1 s | Zn–O |\\n| 528 | — | N₂O* 5 s | Zn–O |\"},{\"panel_id\":\"d\",\"text\":\"| Photon energy (eV) | Epsilon 2 (a.u.) |\\n|---------------------|-------------------|\\n| 2.4 | 0.0 |\\n| 2.6 | 0.0 |\\n| 2.8 | 0.0 |\\n| 3.0 | 0.0 |\\n| 3.2 | 0.0 |\\n| 3.4 | 0.0 |\"},{\"panel_id\":\"e\",\"text\":\"| Photon energy (eV) | Epsilon 2 (a.u.) |\\n|---------------------|-------------------|\\n| 3.6 | 0.0 |\\n| 3.8 | 0.0 |\\n| 4.0 | 0.0 |\\n| 4.2 | 0.0 |\\n| 4.4 | 0.0 |\"},{\"panel_id\":\"f\",\"text\":\"| Photon energy (eV) | Epsilon 2 (a.u.) |\\n|---------------------|-------------------|\\n| 2.2 | 0.0 |\\n| 2.4 | 0.0 |\\n| 2.6 | 0.0 |\\n| 2.8 | 0.0 |\\n| 3.0 | 0.0 |\\n| 3.2 | 0.0 |\"},{\"panel_id\":\"g\",\"text\":\"| Conduction Band | Valence Band |\\n|------------------|--------------|\\n| Indium oxide N₂O* Gap state increase & Donor-level decrease | Indium oxide N₂O* Gap state increase & Donor-level decrease |\\n| Gallium oxide N₂ | |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Gallium oxide. Panel (e) shows the bandgap widening from 4.53 eV to 4.62 eV, whereas Indium Oxide exhibits bandgap narrowing.\"}]},{\"panel_id\":\"h\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Reduced sub-gap absorption. The absorption tail near the band edge is suppressed and steepened in the N₂O-treated sample, indicating fewer localized defect states within the bandgap.\"}]},{\"panel_id\":\"g\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Passivation. Extended N₂O plasma exposure reduces shallow donor states associated with oxygen vacancies in Indium Oxide, shifting the Fermi level away from the conduction band.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Trap density. Increased gap states act as charge traps that must be filled before channel conduction begins, resulting in a larger sub-threshold swing and slower switching.\"}]}]","bbox":[{"panel_id":"a","x":11,"y":57,"width":334,"height":379},{"panel_id":"b","x":393,"y":57,"width":332,"height":379},{"panel_id":"c","x":766,"y":58,"width":339,"height":384},{"panel_id":"d","x":29,"y":507,"width":324,"height":385},{"panel_id":"e","x":419,"y":507,"width":305,"height":382},{"panel_id":"f","x":786,"y":508,"width":333,"height":392},{"panel_id":"g","x":78,"y":977,"width":256,"height":387},{"panel_id":"h","x":453,"y":976,"width":256,"height":388},{"panel_id":"i","x":850,"y":977,"width":256,"height":387}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/Dong-Gyu Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1120,"height":1364,"image_format":"jpeg","image_sha256":"4aff01618a53e4cdc24f539f85f78a0927d3b8b8e2238306369bbed6eea1944b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_19_figure_5.jpg","caption":"Figure 5. Desorption behaviors of the nitrogen and carbon species in the $\\mathrm { I n } _ { 2 } \\mathrm { O } _ { 3 } ,$ ${ \\mathrm { G a } } _ { 2 } { \\mathrm { O } } _ { 3 } ,$ and $\\mathrm { Z n O }$ fil ms fabricated with $\\mathrm { O } _ { 2 }$ or $\\mathrm { N } _ { 2 } \\mathrm { O }$ plasma reactant. TDS spectra of the (a) $\\mathrm { I n } _ { 2 } \\mathrm { O } _ { 3 } ,$ (b) ${ \\mathrm { G a } } _ { 2 } { \\mathrm { O } } _ { 3 } ,$ and(c) $_ \\mathrm { Z n O }$ flms fabricated by using an $\\mathrm { O } _ { 2 }$ plasma exposure time of 1 s and $\\mathrm { N } _ { 2 } \\mathrm { O }$ plasma times of 1 and 5s.","id":"train/atomic-layer-deposition/simulation-usecase/19/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/19/figure_5","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure tracks the desorption of nitrogen (N, m/z = 14) and carbon-related impurities (CO, CO₂) from indium, gallium, and zinc oxide films during heating. For indium oxide, the N₂O plasma treatment (blue line) significantly suppresses CO and CO₂ desorption in the 350–500 °C range (yellow boxes) compared to the O₂ reference (black line), demonstrating more effective removal of carbon-based ligand residues.\"},{\"panel_id\":\"b\",\"text\":\"Gallium oxide uniquely exhibits a high-temperature nitrogen release (yellow box, inset) after N₂O treatment, confirming stable nitrogen incorporation into the Ga₂O₃ lattice and supporting the improved stability observed in prior electrical measurements.\"},{\"panel_id\":\"c\",\"text\":\"Zinc oxide temperature-dependent desorption of species, measured using TDS at m/z = 14, 28, and 44.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | TDS intensity | Condition | Indium Oxide Species (m/z) |\\n|-----------------:|--------------:|-----------|---------------|\\n| 150 | 10⁻¹² | O₂* 1 s | N (14) |\\n| 150 | 10⁻¹² | N₂O* 1 s | N (14) |\\n| 150 | 10⁻¹² | N₂O* 5 s | N (14) |\\n| 150 | 10⁻¹² | O₂* 1 s | CO (28) |\\n| 150 | 10⁻¹² | N₂O* 1 s | CO (28) |\\n| 150 | 10⁻¹² | N₂O* 5 s | CO (28) |\\n| 150 | 10⁻¹² | O₂* 1 s | CO₂ (44) |\\n| 150 | 10⁻¹² | N₂O* 1 s | CO₂ (44) |\\n| 150 | 10⁻¹² | N₂O* 5 s | CO₂ (44) |\\n| 300 | 10⁻¹¹ | O₂* 1 s | N (14) |\\n| 300 | 10⁻¹¹ | N₂O* 1 s | N (14) |\\n| 300 | 10⁻¹¹ | N₂O* 5 s | N (14) |\\n| 300 | 10⁻¹¹ | O₂* 1 s | CO (28) |\\n| 300 | 10⁻¹¹ | N₂O* 1 s | CO (28) |\\n| 300 | 10⁻¹¹ | N₂O* 5 s | CO (28) |\\n| 300 | 10⁻¹¹ | O₂* 1 s | CO₂ (44) |\\n| 300 | 10⁻¹¹ | N₂O* 1 s | CO₂ (44) |\\n| 300 | 10⁻¹¹ | N₂O* 5 s | CO₂ (44) |\\n| 450 | 10⁻¹² | O₂* 1 s | N (14) |\\n| 450 | 10⁻¹² | N₂O* 1 s | N (14) |\\n| 450 | 10⁻¹² | N₂O* 5 s | N (14) |\\n| 450 | 10⁻¹⁰ | O₂* 1 s | CO (28) |\\n| 450 | 10⁻¹⁰ | N₂O* 1 s | CO (28) |\\n| 450 | 10⁻¹¹ | N₂O* 5 s | CO (28) |\\n| 450 | 10⁻¹⁰ | O₂* 1 s | CO₂ (44) |\\n| 450 | 10⁻¹⁰ | N₂O* 1 s | CO₂ (44) |\\n| 450 | 10⁻¹¹ | N₂O* 5 s | CO₂ (44) |\\n| 600 | 10⁻¹² | O₂* 1 s | N (14) |\\n| 600 | 10⁻¹² | N₂O* 1 s | N (14) |\\n| 600 | 10⁻¹² | N₂O* 5 s | N (14) |\\n| 600 | 10⁻¹¹ | O₂* 1 s | CO (28) |\\n| 600 | 10⁻¹¹ | N₂O* 1 s | CO (28) |\\n| 600 | 10⁻¹¹ | N₂O* 5 s | CO (28) |\\n| 600 | 10⁻¹¹ | O₂* 1 s | CO₂ (44) |\\n| 600 | 10⁻¹¹ | N₂O* 1 s | CO₂ (44) |\\n| 600 | 10⁻¹¹ | N₂O* 5 s | CO₂ (44) |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | TDS intensity | Condition | Gallium Oxide Species (m/z) |\\n|-----------------:|--------------:|-----------|---------------|\\n| 150 | 10⁻¹² | O₂* 1 s | N (14) |\\n| 150 | 10⁻¹² | N₂O* 1 s | N (14) |\\n| 150 | 10⁻¹² | N₂O* 5 s | N (14) |\\n| 150 | 10⁻¹² | O₂* 1 s | CO (28) |\\n| 150 | 10⁻¹² | N₂O* 1 s | CO (28) |\\n| 150 | 10⁻¹² | N₂O* 5 s | CO (28) |\\n| 150 | 10⁻¹² | O₂* 1 s | CO₂ (44) |\\n| 150 | 10⁻¹² | N₂O* 1 s | CO₂ (44) |\\n| 150 | 10⁻¹² | N₂O* 5 s | CO₂ (44) |\\n| 300 | 10⁻¹¹ | O₂* 1 s | N (14) |\\n| 300 | 10⁻¹¹ | N₂O* 1 s | N (14) |\\n| 300 | 10⁻¹¹ | N₂O* 5 s | N (14) |\\n| 300 | 10⁻¹¹ | O₂* 1 s | CO (28) |\\n| 300 | 10⁻¹¹ | N₂O* 1 s | CO (28) |\\n| 300 | 10⁻¹¹ | N₂O* 5 s | CO (28) |\\n| 300 | 10⁻¹¹ | O₂* 1 s | CO₂ (44) |\\n| 300 | 10⁻¹¹ | N₂O* 1 s | CO₂ (44) |\\n| 300 | 10⁻¹¹ | N₂O* 5 s | CO₂ (44) |\\n| 450 | 10⁻¹² | O₂* 1 s | N (14) |\\n| 450 | 10⁻¹² | N₂O* 1 s | N (14) |\\n| 450 | 10⁻¹² | N₂O* 5 s | N (14) |\\n| 450 | 10⁻¹⁰ | O₂* 1 s | CO (28) |\\n| 450 | 10⁻¹⁰ | N₂O* 1 s | CO (28) |\\n| 450 | 10⁻¹¹ | N₂O* 5 s | CO (28) |\\n| 450 | 10⁻¹⁰ | O₂* 1 s | CO₂ (44) |\\n| 450 | 10⁻¹¹ | N₂O* 1 s | CO₂ (44) |\\n| 450 | 10⁻¹¹ | N₂O* 5 s | CO₂ (44) |\\n| 600 | 10⁻¹² | O₂* 1 s | N (14) |\\n| 600 | 10⁻¹² | N₂O* 1 s | N (14) |\\n| 600 | 10⁻¹² | N₂O* 5 s | N (14) |\\n| 600 | 10⁻¹⁰ | O₂* 1 s | CO (28) |\\n| 600 | 10⁻¹⁰ | N₂O* 1 s | CO (28) |\\n| 600 | 10⁻¹¹ | N₂O* 5 s | CO (28) |\\n| 600 | 10⁻¹¹ | O₂* 1 s | CO₂ (44) |\\n| 600 | 10⁻¹¹ | N₂O* 1 s | CO₂ (44) |\\n| 600 | 10⁻¹¹ | N₂O* 5 s | CO₂ (44) |\"},{\"panel_id\":\"c\",\"text\":\"| Temperature (°C) | TDS intensity | Condition | Zinc Oxide Species (m/z) |\\n|-----------------:|--------------:|-----------|---------------|\\n| 150 | 10⁻¹² | O₂* 1 s | N (14) |\\n| 150 | 10⁻¹² | N₂O* 1 s | N (14) |\\n| 150 | 10⁻¹² | N₂O* 5 s | N (14) |\\n| 150 | 10⁻¹² | O₂* 1 s | CO (28) |\\n| 150 | 10⁻¹² | N₂O* 1 s | CO (28) |\\n| 150 | 10⁻¹² | N₂O* 5 s | CO (28) |\\n| 150 | 10⁻¹² | O₂* 1 s | CO₂ (44) |\\n| 150 | 10⁻¹² | N₂O* 1 s | CO₂ (44) |\\n| 150 | 10⁻¹² | N₂O* 5 s | CO₂ (44) |\\n| 300 | 10⁻¹¹ | O₂* 1 s | N (14) |\\n| 300 | 10⁻¹¹ | N₂O* 1 s | N (14) |\\n| 300 | 10⁻¹¹ | N₂O* 5 s | N (14) |\\n| 300 | 10⁻¹¹ | O₂* 1 s | CO (28) |\\n| 300 | 10⁻¹¹ | N₂O* 1 s | CO (28) |\\n| 300 | 10⁻¹¹ | N₂O* 5 s | CO (28) |\\n| 300 | 10⁻¹¹ | O₂* 1 s | CO₂ (44) |\\n| 300 | 10⁻¹¹ | N₂O* 1 s | CO₂ (44) |\\n| 300 | 10⁻¹¹ | N₂O* 5 s | CO₂ (44) |\\n| 450 | 10⁻¹² | O₂* 1 s | N (14) |\\n| 450 | 10⁻¹² | N₂O* 1 s | N (14) |\\n| 450 | 10⁻¹² | N₂O* 5 s | N (14) |\\n| 450 | 10⁻¹⁰ | O₂* 1 s | CO (28) |\\n| 450 | 10⁻¹⁰ | N₂O* 1 s | CO (28) |\\n| 450 | 10⁻¹⁰ | N₂O* 5 s | CO (28) |\\n| 450 | 10⁻¹⁰ | O₂* 1 s | CO₂ (44) |\\n| 450 | 10⁻¹⁰ | N₂O* 1 s | CO₂ (44) |\\n| 450 | 10⁻¹⁰ | N₂O* 5 s | CO₂ (44) |\\n| 600 | 10⁻¹² | O₂* 1 s | N (14) |\\n| 600 | 10⁻¹² | N₂O* 1 s | N (14) |\\n| 600 | 10⁻¹² | N₂O* 5 s | N (14) |\\n| 600 | 10⁻¹¹ | O₂* 1 s | CO (28) |\\n| 600 | 10⁻¹¹ | N₂O* 1 s | CO (28) |\\n| 600 | 10⁻¹¹ | N₂O* 5 s | CO (28) |\\n| 600 | 10⁻¹¹ | O₂* 1 s | CO₂ (44) |\\n| 600 | 10⁻¹¹ | N₂O* 1 s | CO₂ (44) |\\n| 600 | 10⁻¹¹ | N₂O* 5 s | CO₂ (44) |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The N₂O-treated samples show reduced carbon-related desorption peaks compared to the O₂ reference, indicating improved film purity and reduced electron scattering centers.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Nitrogen incorporation. The increased nitrogen desorption confirms chemical incorporation of nitrogen into the Gallium Oxide lattice.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Approximately 400–450 °C. The dominant desorption peak is centered in this temperature range.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Significant reduction. The Blue line is substantially lower, indicating that extended N₂O plasma treatment effectively removes carbon monoxide–related impurities.\"}]}]","bbox":[{"panel_id":"a","x":33,"y":45,"width":389,"height":420},{"panel_id":"b","x":432,"y":45,"width":676,"height":429},{"panel_id":"c","x":36,"y":534,"width":388,"height":430},{"panel_id":"d","x":435,"y":535,"width":673,"height":438},{"panel_id":"e","x":36,"y":1031,"width":389,"height":421},{"panel_id":"f","x":440,"y":1030,"width":668,"height":428}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/Dong-Gyu Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1109,"height":1475,"image_format":"jpeg","image_sha256":"8dbc95e3e177663f40c566942738a6cdb8b7d17fc37d9c699a05b9322dae1f75","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_23_fig_8.jpg","caption":"Fig. 8 Fitting curves of the linear CO adsorption spectra on $\\mathrm{AlO}_x$ -coated Pt nanoparticles after (a) 0, (b) 1, (c) 3 and (d) 5 ALD cycles.","id":"train/atomic-layer-deposition/simulation-usecase/23/fig_8","sample_id":"atomic-layer-deposition/simulation-usecase/23/fig_8","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":3,"width":358,"height":218},{"panel_id":"b","x":357,"y":8,"width":294,"height":211},{"panel_id":"c","x":1,"y":218,"width":358,"height":242},{"panel_id":"d","x":357,"y":217,"width":294,"height":242}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/Jiaqiang Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":653,"height":461,"image_format":"jpeg","image_sha256":"16c7aba8b8da5cac663e7db78e277d675b3e2c9991364a2810ed0443f90b8569","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_13_figure_10.jpg","caption":"Figure 10. XPS fitting results of the Al $2p$ , Ga $3d$ , and N $1s$ peaks for the AlGaN samples fabricated using the digital etching (a–c) and ALE (d–f) processes.","id":"train/atomic-layer-etching/experimental-usecase/13/figure_10","sample_id":"atomic-layer-etching/experimental-usecase/13/figure_10","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"},{"panel_id":"e","label":"multi spectra chart"},{"panel_id":"f","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows Al 2p core-level spectra with peaks labeled as Al-N and Al-O.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows Ga 3d core-level spectra with peaks labeled as Ga-N and Ga-O.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows N 1s core-level spectra with peaks labeled as N-Ga, N-Al, and Ga Auger.\"},{\"panel_id\":\"d\",\"text\":\"The figure shows Al 2p core-level spectra with peaks labeled as Al-N and Al-O.\"},{\"panel_id\":\"e\",\"text\":\"The figure shows Ga 3d core-level spectra with peaks labeled as Ga-N and Ga-O.\"},{\"panel_id\":\"f\",\"text\":\"The figure shows N 1s core-level spectra with peaks labeled as N-Ga, N-Al, and Ga Auger.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Component | Binding Energy (eV) |\\n|---|---|\\n| Al-N | Peak at 73.5 |\\n| Al-O | Peak at 74 |\"},{\"panel_id\":\"b\",\"text\":\"| Component | Binding Energy (eV) |\\n|---|---|\\n| Ga-N | Peak at 19.5 |\\n| Ga-O | Peak at 20 |\"},{\"panel_id\":\"c\",\"text\":\"| Component | Binding Energy (eV) |\\n|---|---|\\n| Ga Auger | Peak at 394 |\\n| N-Al | Peak at 395 |\\n| N-Ga | Peak at 396.5 |\"},{\"panel_id\":\"d\",\"text\":\"| Component | Binding Energy (eV) |\\n|---|---|\\n| Al-N | Peak at 73.5 |\\n| Al-O | Peaks at 74, 75 |\"},{\"panel_id\":\"e\",\"text\":\"| Component | Binding Energy (eV) |\\n|---|---|\\n| Ga-N | Peak at 19.5 |\\n| Ga-O | Peak at 20 |\"},{\"panel_id\":\"f\",\"text\":\"| Component | Binding Energy (eV) |\\n|---|---|\\n| Ga Auger | Peak at 394 |\\n| N-Al | Peak at 395 |\\n| N-Ga | Peak at 396.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Al 2p, Ga 3d, and N 1s regions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The digital etching method showed larger Al-O and Ga-O peak intensities.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It indicates that digital etching is less effective at removing surface oxides compared to ALE.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ratio was 0.90 for the ALE sample and 0.82 for the digitally etched sample, indicating fewer nitrogen vacancies for the ALE-treated surface.\"}]}]","bbox":[{"panel_id":"a","x":8,"y":10,"width":314,"height":250},{"panel_id":"b","x":371,"y":10,"width":312,"height":250},{"panel_id":"c","x":730,"y":11,"width":320,"height":250},{"panel_id":"d","x":9,"y":326,"width":317,"height":252},{"panel_id":"e","x":370,"y":326,"width":313,"height":252},{"panel_id":"f","x":730,"y":325,"width":320,"height":253}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/Low-Damage and Self-Limiting (Al)GaN Etching Process.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1050,"height":578,"image_format":"jpeg","image_sha256":"5213a8fe3222dc4a69acb1b647fa9e12979601b88e80b4a86339ae0ba07e827c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_16_fig_3.jpg","caption":"Fig. 3. XPS a) F(1s) and b) C(1s) profiles for 1) for film $(11\\mathrm{nm})$ deposited in $\\nu_{\\mathrm{CF_4}} = 3.3\\%$ (solid symbols) and 2) for film $(22\\mathrm{nm})$ deposited in $\\nu_{\\mathrm{CF4}} = 6.6\\%$ (open symbols), while Ar fraction is $83.3\\%$","id":"train/atomic-layer-etching/experimental-usecase/16/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/16/fig_3","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The F 1s XPS spectra show a single dominant peak centered near 690 eV for both CF₄ fractions. Increasing ν_CF₄ from 3.3% to 6.6% leads to a strong increase in peak intensity without a measurable chemical shift, indicating a higher fluorine surface concentration rather than a change in bonding state.\"},{\"panel_id\":\"b\",\"text\":\"The C 1s spectra reveal multiple fluorinated carbon components, including C–CFₙ, C–F, C–F₂, and C–F₃. At higher CF₄ fraction, the relative contribution of fluorinated species (C–Fₓ) increases while the hydrocarbon backbone contribution decreases. The shift of intensity toward higher binding energies reflects increased carbon–fluorine coordination.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Intensity (v_CF4 = 3.3%) (counts/s) | Intensity (v_CF4 = 6.6%) (counts/s) |\\n|---|---|---|\\n| 698.0 | ~400 | ~400 |\\n| 696.0 | ~400 | ~400 |\\n| 694.0 | ~400 | ~400 |\\n| 692.0 | ~420 | ~420 |\\n| 690.2 | ~3750 | ~6600 |\\n| 688.0 | ~500 | ~1200 |\\n| 686.0 | ~400 | ~300 |\\n| 684.0 | ~400 | ~300 |\\n| 682.0 | ~400 | ~300 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Intensity (v_CF4 = 3.3%) (counts/s) | Intensity (v_CF4 = 6.6%) (counts/s) | Component |\\n|---|---|---|---|\\n| 285.0 | ~1500 | ~200 | C–CF_n |\\n| 290.0 | ~450 | ~540 | C–F |\\n| 292.5 | ~300 | ~540 | C–F2 |\\n| 294.5 | ~400 | ~300 | C–F3 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The formation of multiple peaks in the spectrum shows the formation of several species on the film.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"6.6% of CF4\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At higher CF₄ fractions, the F(1s) spectra exhibit a noticeable increase in peak intensity while maintaining a stable binding energy, indicating enhanced fluorine incorporation without charging effects. In the C(1s) spectra, higher CF₄ levels result in stronger CF₂ and CF₃ peaks, reflecting increased fluorination of the polymer backbone. In contrast, films deposited at lower CF₄ fractions show weaker fluorinated carbon components, highlighting a clear compositional trend driven by plasma chemistry.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The C-CFn component, with a binding energy of ~285 eV\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"C-F3, C-F2, C-F, C-CFn\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"6.6%\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"290.1 eV, 287.9 eV\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"They attributed this peak to the presence of a hydrocarbon group (i.e. contamination). This peak could also correspond to another condition of the C-F bond, possibly causing the calculated fluorine concentration to be underestimated. However, this possible underestimation does not affect the qualitative result that the concentration of fluorine in the film increases with the concentration of CF4 in the plasma.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film deposited in higher CF4 fraction plasma 6.6% shows more pronounced C-Fx peaks corresponding to higher concentration of C-bonded fluorine in film; i.e., more CF, CF2, CF3 compared to films with 3.3% CF4 concentration.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"XPS peak\\n- 285.5 eV — C–CFₙ bond\\n- 290.2 eV — CF\\n- 292.4 eV — CF₂ \\n- 294.6 eV — CF₃\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The C(1s) spectra reveal that higher CF₄ fractions produce more heavily fluorinated polymer films. At 3.3% CF₄, the film shows predominantly lower-fluorination states (C-CFn peak around 285 eV) with modest C-F, C-F₂, and C-F₃ contributions. At 6.6% CF₄, the C-Fx peaks (C-F, C-F₂, C-F₃) become much more pronounced, indicating higher concentrations of carbon atoms bonded to multiple fluorine atoms.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"C-CFn (~285 eV),C-F (~290 eV),C-F₂ (~292 eV),C-F₃ (~295 eV).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As carbon bonds to an increasing number of fluorine atoms, electron density around carbon decreases due to fluorine’s strong electronegativity. This causes a systematic shift of C 1s components to higher binding energies, with C–F₃ appearing at the highest energies.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The C–F₂ and C–F₃ species show the clearest increase, with C–F₃ becoming a distinct peak.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An increase in CF4 concentration seems to induce a shift from more CF3 and C-CFx bonds towards more CF and CF2 bonds.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This conclusion can not be drawn from the bare carbon spectrum. Calculations of atomic composition require more material specific parameters than the pure XPS spectrum.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 689.8–690.2 eV.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the concentration of CF4 decreases, the main peak of F, shift towards lower binding energy values.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the composition of CF4 increases, more F and C atoms are deposited on the film. Therefore, there are also greater amounts of species, such as C-F3, C-F2, C-F, and C-CFn.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Increased F(1s) peak intensity at higher CF₄ fraction, Stronger CF₂ and CF₃ components in the C(1s) spectra, Appearance of an additional C–F or hydrocarbon-related peak near 288 eV, Consistent peak positions indicating minimal charging effects\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The peaks have roughly the same binding energy howver the 6.6% CF4 condition gives a much stronger intensity. This indicates a larger presence of F on the surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The peak at higher binding energy (690.2 eV, 3.3% CF4).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In XPS, stronger positive charging of a sample during photoemission reduces the kinetic energy of the electrons escaping the surface, making the peaks shift to higher binding energies. On the spectrum, this corresponds to a shift slightly to the left. The film deposited at 3.3% CF4 shows this leftward energy shift, indicating it was likely more positively charged during the measurement.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the percentage of CF4 in the plasma was increased from 3.3% to 6.6%, the F/C ratio increased from 0.5 to 1.6.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"11 nm (CF4 fraction = 3.3%) and 22 nm (CF4 fraction = 6.6%)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"CF3 at 294.6 eV, CF2 at 292.4 eV, CF at 290.2 eV\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The peak maximum occurs between 689.5 -690.5 eV for both conditions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the films with more CF4 concentration (6.6%) show a higher peak intensity of 6500 counts than the one with lower CF4 concentration of 3.3% showing 4000 counts.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The fraction of CF₄ (νCF₄) in the deposition process was changed, from 3.3% to 6.6%.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the CF₄ fraction from 3.3% to 6.6% leads to a film with a significantly different chemical structure. The XPS data shows a substantial increase in fluorine incorporation within the film, indicating a more fluorinated carbon network. This change in chemical composition is directly responsible for the altered C(1s) bonding profile and is correlated with the ability to deposit a much thicker film.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 689-690 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. \\nEvidence: in panel (a), the peak for v_CF4 = 6.6% shows higher intensity than for v_CF4 = 3.3%.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ν_CF₄ = 6.6%.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Based on subfigure a, it is shown that an increase in the CF4 concentration results in more fluorine in the film.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, usually a shift in peak position indicates different stoichiometries. This is proven by the spectrum from carbon where the change in stoichiometry also introduces different peaks.\"}]}]","bbox":[{"panel_id":"a","x":7,"y":36,"width":491,"height":358},{"panel_id":"b","x":525,"y":37,"width":419,"height":351}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/Selective atomic layer etching of Al2O3, AlNx and HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":947,"height":394,"image_format":"jpeg","image_sha256":"78e05ff29c4651cf9029f40dcedff6a236a34c7ca955eb3bf205e577edda75f3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_10.jpg","caption":"Figure 10. FTIR spectra recorded at $150^{\\circ}\\mathrm{C}$ after every 5 cycles of $\\mathrm{VO}_2$ ALD for 35 cycles using TEMAV and $\\mathrm{H}_2\\mathrm{O}$ as the reactants at $150^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/17/figure_10","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_10","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows a series of FTIR absorbance spectra collected during the atomic layer deposition (ALD) of VO₂ at 150 °C. The spectra are plotted as absorbance vs. wavenumber (cm⁻¹) and correspond to increasing ALD cycle numbers, ranging from 5 to 35. Two primary peaks are observed: one near 1010 cm⁻¹ corresponding to the V=O stretching mode, and another near 700–600 cm⁻¹ associated with the V–O bond in VO₂. The increasing intensity of both peaks with cycle number indicates progressive film growth and the formation of VO₂ bonds over successive ALD cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance (Cycle 5) | Absorbance (Cycle 10) | Absorbance (Cycle 15) | Absorbance (Cycle 20) | Absorbance (Cycle 25) | Absorbance (Cycle 30) | Absorbance (Cycle 35) |\\n|------------------|----------------------|------------------------|------------------------|------------------------|------------------------|------------------------|------------------------|\\n| 1400 | 0.01 | 0.015 | 0.02 | 0.025 | 0.03 | 0.035 | 0.04 |\\n| 1000 | 0.05 | 0.08 | 0.11 | 0.14 | 0.17 | 0.20 | 0.23 |\\n| 750 | 0.10 | 0.13 | 0.16 | 0.19 | 0.22 | 0.25 | 0.28 |\\n| 600 | 0.15 | 0.18 | 0.21 | 0.24 | 0.27 | 0.30 | 0.33 |\\n| 450 | 0.05 | 0.06 | 0.07 | 0.08 | 0.09 | 0.10 | 0.11 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 1010 cm⁻¹.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"V=O stretching mode , V–O stretching mode\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The progressive increase in absorbance at the V=O and V–O vibrational bands as the number of ALD cycles increases suggests a corresponding growth in the VO₂ thin film. The presence and sharpening of these characteristic peaks confirm the incorporation of vanadium and oxygen in the desired bonding environments, validating the chemical identity of the film. Furthermore, the consistency in peak position and smooth growth in intensity indicates uniform deposition behavior at 150 °C, reinforcing the layer-by-layer nature of the ALD process.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":672,"height":616}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":672,"height":616,"image_format":"jpeg","image_sha256":"2e0070acc186d5a1bd112108a971a480370c2c1f103a9fc76bc7ca0c3401dac8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_15.jpg","caption":"Figure 15. FTIR spectra recorded at $200^{\\circ}\\mathrm{C}$ during fluorination of the $\\mathrm{VO}_2$ ALD film at $200^{\\circ}\\mathrm{C}$ . (a) Difference spectra for $10 \\mathrm{SF}_4$ exposures on the $\\mathrm{VO}_2$ ALD film. (b) Difference spectra for $10 \\mathrm{HF}$ exposures on the $\\mathrm{VO}_2$ ALD film.","id":"train/atomic-layer-etching/experimental-usecase/17/figure_15","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_15","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure compares the infrared absorbance spectra of VO₂ films fluorinated using SF₄ and HF gases at 200 °C. Each trace represents the progression of exposure from 1 to 10 cycles, showing how the spectral features evolve with increasing fluorination. The SF₄ spectra (in blue) exhibit a progressive increase in the V–F absorbance region (500–800 cm⁻¹) and attenuation in the V=O region (~1000 cm⁻¹), indicating successful replacement of oxygen with fluorine. The HF spectra (in red) also show similar trends but with reduced intensity changes, suggesting lower fluorine incorporation compared to SF₄.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance (SF₄) |\\n|------------------|------------------|\\n| 1000 | -0.1 |\\n| 800 | 0.0 |\\n| 600 | 0.05 |\\n| 400 | 0.08 |\\n| 40 | 0.1 |\"},{\"panel_id\":\"b\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance (HF) |\\n|------------------|-----------------|\\n| 1000 | -0.3 |\\n| 800 | -0.25 |\\n| 600 | -0.2 |\\n| 400 | -0.1 |\\n| 40 | -0.05 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SF₄.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Over 10 exposure cycles, SF₄ treatment leads to a more pronounced increase in absorbance in the V–F vibrational region and a significant reduction in the V=O peak near 1000 cm⁻¹. This suggests greater fluorine incorporation and more extensive modification of the VO₂ lattice. In contrast, HF exposure results in less dramatic changes in the same regions, indicating a lower degree of fluorination under identical conditions. The comparison reflects SF₄'s higher reactivity or surface accessibility relative to HF.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"V=O stretch (~1000 cm⁻¹), V–F stretch (~500–800 cm⁻¹), V–O region (600–800 cm⁻¹)\"}]}]","bbox":[{"panel_id":"a","x":5,"y":1,"width":646,"height":343},{"panel_id":"b","x":0,"y":236,"width":655,"height":563}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":656,"height":803,"image_format":"jpeg","image_sha256":"255cb18e8453a770e27192ea12f0652342b6bbf6dde4b586964b06e3bbbdda21","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_2_figure_12.jpg","caption":"Figure 12. Evolution of plasma properties from cycle to cycle as measured using a Langmuir probe.10 The cycle-to-cycle changes increase with $\\mathrm{C_4F_8}$ pulse length due to more residual FC in the system. This is explained by more deposition of FC on the walls of the apparatus, contributing residual FC during Ar cycles when idealy FC is only prent on the active surface of the substrate. The overal behavior is consistent with the impact of continuous precursor addition on plasma electrical properties.","id":"train/atomic-layer-etching/experimental-usecase/2/figure_12","sample_id":"atomic-layer-etching/experimental-usecase/2/figure_12","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows cycle-to-cycle evolution of plasma potential during C₄F₈ pulsing, where longer pulse duration (5.0 s) induces larger and more persistent potential changes than the shorter pulse (1.5 s).\"},{\"panel_id\":\"b\",\"text\":\"presents the electron density response, indicating higher and more slowly relaxing density for longer C₄F₈ exposure due to increased residual fluorocarbon species.\"},{\"panel_id\":\"c\",\"text\":\"shows changes in electron temperature, which remain relatively low but exhibit stronger perturbations for longer pulse duration, reflecting altered plasma conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Vp (V) — 1.5 s | Vp (V) — 5.0 s |\\n|----------|----------------|----------------|\\n| 0 | 0.65 | 0.50 |\\n| 5 | 0.10 | 0.85 |\\n| 10 | -0.05 | 0.55 |\\n| 20 | -0.10 | 0.45 |\\n| 40 | -0.10 | 0.25 |\\n| 60 | -0.10 | 0.05 |\\n| 80 | 0.00 | -0.10 |\\n| 95 | 0.55 | 0.40 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Ne — 1.5 s | Ne — 5.0 s |\\n|----------|------------|------------|\\n| 0 | -2.0e10 | -3.0e10 |\\n| 5 | -5.0e9 | -1.5e10 |\\n| 10 | -2.0e9 | -1.0e10 |\\n| 20 | -1.0e9 | -6.0e9 |\\n| 40 | -5.0e8 | -3.0e9 |\\n| 60 | -2.0e8 | -2.0e9 |\\n| 80 | -1.0e8 | -1.0e9 |\\n| 95 | -2.0e10 | -3.5e10 |\"},{\"panel_id\":\"c\",\"text\":\"| Time (s) | Te (eV) — 1.5 s | Te (eV) — 5.0 s |\\n|----------|------------------|------------------|\\n| 0 | 0.13 | 0.12 |\\n| 5 | 0.01 | 0.00 |\\n| 10 | 0.00 | -0.01 |\\n| 20 | 0.01 | 0.00 |\\n| 40 | 0.01 | -0.01 |\\n| 60 | 0.02 | 0.00 |\\n| 80 | 0.03 | 0.00 |\\n| 95 | 0.12 | 0.11 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Cycle-to-cycle plasma evolution directly impacts etch uniformity, selectivity, and self-limitation in ALE processes. Increased residual fluorocarbon species from longer precursor pulses alter plasma electrical properties, which can reduce process controllability and degrade etching precision. Understanding these effects is critical for optimizing pulse timing and maintaining stable ALE operation.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 5.0 s pulse produces larger and more persistent changes in plasma potential, electron density, and electron temperature than the 1.5 s pulse.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Plasma potential, Electron density, Electron temperature\"}]}]","bbox":[{"panel_id":"a","x":8,"y":13,"width":360,"height":390},{"panel_id":"b","x":374,"y":11,"width":397,"height":392},{"panel_id":"c","x":784,"y":11,"width":355,"height":392}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/Atomic Layer Etching at the Tipping Point An Overview.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1139,"height":403,"image_format":"jpeg","image_sha256":"bbb8bb81b47965a77945b29a2678e9816a50c5522d6c5c4cae75006d3cd606db","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_2_figure_8.jpg","caption":"Figure 8. Real time ellipsometry trajectory showing key differences in surface processes between ALE and steady-state etching during continuous plasma etching of a $\\mathrm{SiO}_2$ -Si- $\\mathrm{SiO_2}$ multi-layer stack.100 Each dashed line marks $10\\mathrm{\\AA}$ of FC film.","id":"train/atomic-layer-etching/experimental-usecase/2/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/2/figure_8","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents real-time ellipsometry trajectories (Δ vs Ψ) comparing cyclic ALE with continuous Ar/C₄F₈ plasma etching during processing of a SiO₂–Si–SiO₂ multilayer stack. The cyclic ALE trajectory exhibits discrete, stepwise movement corresponding to controlled layer-by-layer processing, whereas continuous etching shows a smoother, continuous trajectory, indicating different surface reaction pathways and selectivity between top SiO₂, Si, and bottom SiO₂ layers.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Δ [°] | Ψ [°] |\\n|---|---|\\n| 60 | 13 |\\n| 70 | 14 |\\n| 80 | 15 |\\n| 90 | 16 |\\n| 100 | 17 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ellipsometry trajectory analysis allows direct, real-time differentiation between controlled cyclic ALE and uncontrolled continuous etching. This enables identification of layer transitions, verification of self-limiting behavior, and optimization of etch selectivity in complex multilayer stacks.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cyclic ALE shows stepwise, segmented trajectories, whereas continuous etching produces a smooth, continuous trajector\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Selective etching of top SiO₂, Transition to Si etching, Bottom SiO₂ exposure, Layer-by-layer removal behavior\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":508,"height":511}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/Atomic Layer Etching at the Tipping Point An Overview.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":508,"height":511,"image_format":"jpeg","image_sha256":"7009c07e2527638292f95e68574d6992b037ab7b8d497aa23f942c233f6a0c23","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_2_figure_9.jpg","caption":"Figure 9. Enhanced potential of precursor choice relative to continuous plasma etching.100 The steady-state surface composition is not reached during a short deposition cycle $(\\sim 3\\mathrm{\\AA}$ in a), whereas for the thicker $(\\sim 15\\mathrm{\\AA})$ film deposited in (b) the carbon 1s photoemission spectrum has become similar to that seen for FC films produced using continuous plasma processes.","id":"train/atomic-layer-etching/experimental-usecase/2/figure_9","sample_id":"atomic-layer-etching/experimental-usecase/2/figure_9","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The C 1s XPS spectrum of the thin fluorocarbon film after deposition shows dominant C–C/C–H and C–CF bonding contributions, with relatively weak C–F₂ and C–F₃ components, indicating a low fluorine content and a polymer structure rich in hydrocarbon-like bonds.\"},{\"panel_id\":\"b\",\"text\":\"The C 1s XPS spectrum of the thick fluorocarbon film after deposition exhibits stronger C–F, C–F₂, and C–F₃ peak intensities compared to the thin film, demonstrating increased fluorination and a higher degree of CFₓ bonding as film thickness increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy [eV] | Intensity [a.u.] |\\n|---|---|\\n| 284 | C-C/H |\\n| 285 | C-CF |\\n| 286 | C-F |\\n| 287 | C-F2 |\\n| 288 | C-F3 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy [eV] | Intensity [a.u.] |\\n|---|---|\\n| 284 | C-C/H |\\n| 285 | C-CF |\\n| 286 | C-F |\\n| 287 | C-F2 |\\n| 288 | C-F3 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A steady-state fluorocarbon surface ensures reproducible surface reactions during ALE cycles, enabling precise thickness control and high selectivity. The similarity between thick deposited films and continuous plasma-grown FC layers indicates that sufficient precursor exposure can stabilize surface chemistry, which is critical for consistent etch performance and minimizing process drift.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thick film shows stronger C–F, C–F₂, and C–F₃ peak intensities, indicating higher fluorination.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"C–C / C–H, C–CF, C–F, C–F₂, C–F₃\"}]}]","bbox":[{"panel_id":"a","x":8,"y":0,"width":326,"height":378},{"panel_id":"b","x":350,"y":8,"width":325,"height":370}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/Atomic Layer Etching at the Tipping Point An Overview.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":675,"height":378,"image_format":"jpeg","image_sha256":"419454a5053d80d46f8ba11fe7aa9e1dd78f34133826f00ea8b95333c760dfc4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_22_figure_7.jpg","caption":"Figure 7. XPS scans of amorphous as-deposited $\\mathrm{MoS}_2$ samples before and after etching cycles at $200^{\\circ}\\mathrm{C}$ . High-resolution scans of $\\mathrm{S2p}$ and $\\mathrm{Mo3d}$ regions before $(\\mathbf{a},\\mathbf{c})$ and after $(\\mathbf{b},\\mathbf{d})$ 144 etching cycles. A small increase in $\\mathrm{MoO}_3$ peaks is observed, indicating the formation of molyoxide species after the $\\mathrm{H}_2\\mathrm{O}$ dose. No apparent differences in spectra indicate the overall lack of alteration of the film after the etching process.","id":"train/atomic-layer-etching/experimental-usecase/22/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/22/figure_7","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Panels (a) shows S 2p XPS spectra at different exposure times, with fitted components and envelope curves revealing shifts in chemical state. The figure also displays Mo 3d spectra under different conditions, showing multiple Mo oxidation states and good fit quality, evidenced by the low residuals above each spectrum\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Intensity (10³ cps) |\\n| ------------------- | ------------------- |\\n| 168 | 0 |\\n| 167 | 0 |\\n| 166 | 0 |\\n| 165 | 0 |\\n| 164 | 15 |\\n| 163 | 14 |\\n| 162 | 10 |\\n| 161 | 6 |\\n| 160 | 2 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Intensity (10³ cps) |\\n| ------------------- | ------------------- |\\n| 168 | 0 |\\n| 167 | 0 |\\n| 166 | 0 |\\n| 165 | 0 |\\n| 164 | 15 |\\n| 163 | 14 |\\n| 162 | 10 |\\n| 161 | 6 |\\n| 160 | 2 |\"},{\"panel_id\":\"c\",\"text\":\"| Binding Energy (eV) | Intensity (10^3 cps) |\\n|---------------------|----------------------|\\n| 240 | 0 |\\n| 239 | 0 |\\n| 238 | 0 |\\n| 237 | 0 |\\n| 236 | 35 |\\n| 235 | 30 |\\n| 234 | 25 |\\n| 233 | 20 |\\n| 232 | 15 |\\n| 231 | 10 |\\n| 230 | 5 |\"},{\"panel_id\":\"d\",\"text\":\"| Binding Energy (eV) | Intensity (10^3 cps) |\\n|---------------------|----------------------|\\n| 240 | 0 |\\n| 239 | 0 |\\n| 238 | 0 |\\n| 237 | 0 |\\n| 236 | 35 |\\n| 235 | 30 |\\n| 234 | 25 |\\n| 233 | 20 |\\n| 232 | 15 |\\n| 231 | 10 |\\n| 230 | 5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The presence of multiple fitted components in the Mo 3d region indicates that molybdenum exists in more than one oxidation state. Peaks corresponding to Mo 3d₅/₂ and Mo 3d₃/₂ doublets are split further, implying a mixture of chemical environments such as Mo⁴⁺ and Mo⁶⁺. This suggests partial oxidation or the coexistence of substoichiometric oxide species in the surface region being probed\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approx. 162 eV\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Raw data,Fit envelope, Background, Individual peak fits, Residuals\"}]}]","bbox":[{"panel_id":"a","x":10,"y":13,"width":466,"height":373},{"panel_id":"b","x":536,"y":10,"width":447,"height":376},{"panel_id":"c","x":28,"y":402,"width":438,"height":371},{"panel_id":"d","x":536,"y":402,"width":439,"height":371}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/Thermal Atomic Layer Etching of MoS2 Using MoF6 and H2O.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":983,"height":773,"image_format":"jpeg","image_sha256":"a78f884fb78509603e9eb35eeaaa67deb5c6782d88726b987e0eaaf08fda2fb7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_14.jpg","caption":"Figure 14. XRD spectra of $\\mathrm{ZnS}$ ALD films grown at $100^{\\circ}\\mathrm{C}$ with thicknesses of 20 and $60 \\mathrm{nm}$ . Crystallinity is observed for the $\\mathrm{ZnS}$ ALD film with a thickness of $60 \\mathrm{nm}$ .","id":"train/atomic-layer-etching/experimental-usecase/23/figure_14","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_14","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The graph shows the X-ray diffraction patterns for Zinc Sulphide deposited using ALD method at 100C with two thickness values 20 nm and 60 nm . Higher thickness shows a clear sharp crytalline peak\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2Theta (°) | Intensity (Arb. Units) | Thickness (nm)|\\n|---|---|---|\\n| 20 | 0 |20 |\\n| 20 | 0 |60 |\\n| 29 | h(002)/c(111)| 60 |\\n| 30 | 0 |20|\\n| 30 | 0 |60 |\\n| 40 | 0 |20 |\\n| 40 | 0 |60 |\\n| 49 | h(110)/c(220)| 60|\\n| 50 | 0 |20 |\\n| 50 | 0 |60 |\\n| 52 |h(103)| 60 |\\n| 57 |c(311)| 60 |\\n| 60 | 0 |20 |\\n| 60 | 0 |60 |\\n| 70 | 0 |20 |\\n| 70 | 0 |60 |\\n| 80 | 0 |20 |\\n| 80 | 0 |60 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 20 nm film is amorphous; the 60 nm film is crystalline.Crystallinity only emerges as the film grows thicker (red line at 60 nm). Therefore, a seed layer must be significantly thicker than 20 nm (likely >40-50 nm) to provide a crystalline template; a thin 20 nm layer would fail to seed epitaxial growth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 100°C ALD process is forced due to the thermal constraint. The trade-off is that the film will have poorer crystallinity (broader XRD peaks) and potentially higher impurity incorporation, leading to inferior optical and electrical properties compared to a film grown at higher temperature.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The emergence of sharp diffraction peaks at 60 nm confirms the formation of polycrystalline grains. While crystallinity improves electronic properties, the boundaries between these randomly oriented grains (suggested by the mix of h(002), h(110), etc.) can act as scattering centers. Thus, while the 60 nm film is structurally superior, it might exhibit slightly higher optical haze or scattering compared to the amorphous, glassy 20 nm film, depending on the grain size relative to the wavelength of light.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies higher optical quality. Better crystallinity typically leads to a higher, more stable refractive index and lower optical scattering losses. Therefore, the 60 nm film would be more suitable for efficient anti-reflection coatings or multilayer optical filters where consistent optical constants are critical.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":5,"width":658,"height":562}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":664,"height":569,"image_format":"jpeg","image_sha256":"943312859c730116e5831017f43399f41ebb6fd1a7e1373f4403756982a809c1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_15.jpg","caption":"Figure 15. Thickness of $\\mathrm{ZnS}$ films versus number of $\\mathrm{ZnS}$ ALD cycles using HF and TMA as reactants at $300^{\\circ}\\mathrm{C}$ . Initial $\\mathrm{ZnS}$ film thicknesses were 20, 40, and $60 \\mathrm{nm}$ . Initial $\\mathrm{ZnS}$ ALD films were grown at $100^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/23/figure_15","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_15","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple-line chart shows the thickness change of zinc sulfide thin films as a function of the number of ZnS ALE cycles measured at 300 °C. The etch rate is approximately 2 Å per cycle. The data correspond to initial ZnS film thicknesses of 20, 40, and 60 nm, where the original ZnS ALD films were deposited at 100 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALE Cycles | ZnS Thickness (Å) | Initial Thickness (nm) |\\n|------------|-------------------|-------------|\\n| 0 | 200 | 20 |\\n| 0 | 400 | 40 |\\n| 0 | 600 | 60 |\\n| 50 | 110.02 | 20 |\\n| 50 | 317.31 | 40 |\\n| 50 | 517.47 | 60 |\\n| 100 | 0 | 20 |\\n| 100 | 206 | 40 |\\n| 100 | 406.42 | 60 |\\n| 150 | — | 20 |\\n| 150 | 91.82 | 40 |\\n| 150 | 288.24 | 60 |\\n| 200 | — | 20 |\\n| 200 | 0 | 40 |\\n| 200 | 180.93 | 60 |\\n| 250 | — | 20 |\\n| 250 | — | 40 |\\n| 250 | 57.3 | 60 |\\n| 300 | — | 20 |\\n| 300 | — | 40 |\\n| 300 | 0 | 60 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The procedure involves etching multiple samples with different initial thicknesses under identical ALE conditions and confirming the slope (etch rate) is the same for all. This controls for any measurement artifacts and validates that the removal is truly cycle-dependent, not thickness-dependent.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Thermal ALE would provide better selectivity. Its surface reactions are less aggressive and can be tuned to minimize attack on organic masks, whereas wet etches often undercut and degrade photoresist, leading to loss of pattern fidelity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This occurs because ALE is a surface-limited reaction; each cycle only modifies and removes a fixed monolayer-equivalent from the surface. The bulk film underneath does not influence the surface reaction kinetics, so thickness is irrelevant to the per-cycle etch depth.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This enables absolute thickness correction of ZnS layers in optical interference filters or Bragg mirrors. After deposition, exact numbers of ALE cycles can be applied to trim the layer to the target optical thickness, ensuring precise wavelength performance.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":669,"height":537}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":675,"height":541,"image_format":"jpeg","image_sha256":"e8611ce96e7880bd55aaaed386440910d2c2f38fce9522b6d6f7e14496864bb6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_7.jpg","caption":"Figure 7. QMS spectra during the fourth cycle of $\\mathrm{ZnS}$ ALE at $275^{\\circ}C$ for HF and TMA exposures in three different mass regions: (a) $m / z$ 10 to 40, (b) $m / z$ 60 to 100, and (c) $m / z$ 100 to 215.","id":"train/atomic-layer-etching/experimental-usecase/23/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_7","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multiple line chart shows QMS spectra recorded during the fourth cycle of ZnS ALE at 275 °C for HF and TMA exposures, displayed in three different mass-to-charge (m/z) regions. The spectrum in the m/z range of 10–40 compares ion intensities during HF and TMA exposures, highlighting low-mass fragments associated with the reactant and volatile byproducts.\"},{\"panel_id\":\"b\",\"text\":\"The spectrum in the m/z range of 60–100 focuses on intermediate-mass ions, where species such as Al(CH₃)F⁺ and Zn(CH₃)⁺ are detected, indicating the formation of volatile zinc- and aluminum-containing reaction products during the TMA step.\"},{\"panel_id\":\"c\",\"text\":\"The spectrum in the m/z range of 100–215 highlights higher-mass fragments, including aluminum fluoride–methyl complexes such as Al₂F(CH₃)₄⁺ and Al₃F₃(CH₃)₅⁺, confirming fluorine removal through the formation of volatile aluminum–fluoride species.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| m/Z | Intensity (mV) | Condition |\\n|-----|----------------|----------------|\\n| 10 | 0 | HF Exposure |\\n| 10 | 0 | TMA Exposure |\\n| 15 | 809.85 | HF Exposure |\\n| 15 | 714.64 | TMA Exposure |\\n| 20 | 68.71 | HF Exposure |\\n| 20 | 2.95 | TMA Exposure |\\n| 25 | 0 | HF Exposure |\\n| 25 | 18.02 | TMA Exposure |\\n| 30 | 0 | HF Exposure |\\n| 30 | 24.87 | TMA Exposure |\\n| 35 | 127.62 | HF Exposure |\\n| 35 | 0 | TMA Exposure |\\n| 40 | 0 | HF Exposure |\\n| 40 | 18.02 | TMA Exposure |\"},{\"panel_id\":\"b\",\"text\":\"| m/Z | Intensity (mV) | Condition | Species |\\n|-----|----------------|---------------|-----------------------------|\\n| 60 | 0 | HF Exposure | |\\n| 60 | 8.07 | TMA Exposure | |\\n| 61 | 0 | HF Exposure | |\\n| 61 | 121.78 | TMA Exposure | Al(CH₃)F⁺ |\\n| 65 | 0 | HF Exposure | |\\n| 65 | 27.87 | TMA Exposure | |\\n| 70 | 0 | HF Exposure | |\\n| 70 | 4.44 | TMA Exposure | |\\n| 72 | 0 | HF Exposure | |\\n| 72 | 46.98 | TMA Exposure | TMA Parent — Al(CH₃)₃ |\\n| 75 | 0 | HF Exposure | |\\n| 75 | 0.74 | TMA Exposure | |\\n| 79 | 0 | HF Exposure | |\\n| 79 | 49.17 | TMA Exposure | Zn(CH₃)⁺ |\\n| 80 | 0 | HF Exposure | |\\n| 80 | 6.64 | TMA Exposure | |\\n| 81 | 0 | HF Exposure | |\\n| 81 | 23.49 | TMA Exposure | Zn(CH₃)⁺ |\\n| 83 | 0 | HF Exposure | |\\n| 83 | 16.16 | TMA Exposure | Zn(CH₃)⁺ |\\n| 85 | 0 | HF Exposure | |\\n| 85 | 1.5 | TMA Exposure | |\\n| 90 | 0 | HF Exposure | |\\n| 90 | 0 | TMA Exposure | |\\n| 94 | 0 | HF Exposure | |\\n| 94 | 12.53 | TMA Exposure | Zn(CH₃)₂ |\\n| 95 | 0 | HF Exposure | |\\n| 95 | 0.74 | TMA Exposure | |\\n| 96 | 0 | HF Exposure | |\\n| 96 | 7.39 | TMA Exposure | Zn(CH₃)₂ |\\n| 98 | 0 | HF Exposure | |\\n| 98 | 5.88 | TMA Exposure | Zn(CH₃)₂ |\\n| 100 | 0 | HF Exposure | |\\n| 100 | 0 | TMA Exposure | |\"},{\"panel_id\":\"c\",\"text\":\"| m/Z | Intensity (mV) | Condition | Species |\\n|-----|----------------|---------------|--------------------------------|\\n| 100 | 0 | HF Exposure | |\\n| 100 | 0 | TMA Exposure | |\\n| 102 | 0 | HF Exposure | |\\n| 102 | 2.29 | TMA Exposure | |\\n| 103 | 0 | HF Exposure | |\\n| 103 | 7.62 | TMA Exposure | Al₂F(CH₃)₂ |\\n| 107 | 0 | HF Exposure | |\\n| 107 | 30.22 | TMA Exposure | Al₂F₂(CH₃) |\\n| 110 | 0 | HF Exposure | |\\n| 110 | 0 | TMA Exposure | |\\n| 117 | 0 | HF Exposure | |\\n| 117 | 60.35 | TMA Exposure | Al₂F(CH₂)(CH₃)₂ |\\n| 120 | 0 | HF Exposure | |\\n| 120 | 0 | TMA Exposure | |\\n| 121 | 0 | HF Exposure | |\\n| 121 | 13.04 | TMA Exposure | Al₂F(CH₂)₂(CH₃)₂ |\\n| 130 | 0 | HF Exposure | |\\n| 130 | 0 | TMA Exposure | |\\n| 133 | 0 | HF Exposure | |\\n| 133 | 209.8 | TMA Exposure | Al₂F(CH₃)₄ |\\n| 137 | 0 | HF Exposure | |\\n| 137 | 50.71 | TMA Exposure | Al₂F₂(CH₃)₃ |\\n| 140 | 0 | HF Exposure | |\\n| 140 | 0 | TMA Exposure | |\\n| 141 | 0 | HF Exposure | |\\n| 141 | 5.51 | TMA Exposure | Al₂F₃(CH₃)₂ |\\n| 150 | 0 | HF Exposure | |\\n| 150 | | TMA Exposure | |\\n| 213 | 0 | HF Exposure | |\\n| 213 | 50.71 | TMA Exposure | Al₃F₃(CH₃)₅ |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Simple AlF₃ is a non-volatile solid which would stay on the surface (stopping the etch). However, the ligand-exchange reaction with TMA produces mixed Aluminum-Fluoride-Methyl dimers. These specific organometallic structures are sufficiently volatile at the process temperature (275°C), allowing them to desorb and carry the fluorine away, which is the critical requirement for a continuous etch process.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"QMS is superior for real-time byproduct monitoring as it directly detects etch products. Ellipsometry tracks thickness change but cannot identify specific chemical reactions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It confirms the process is chemically stable and self-limiting, enabling precise, layer-by-layer etching essential for nanoscale device fabrication.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Sulfur Removal: HF removes Sulfur. This is evidenced by the strong H₂S⁺ (m/z 34) that appears exclusively during the HF exposure (red line).\\n\\nZinc Removal: TMA removes Zinc. This is evidenced by the appearance of zinc-methyl peaks Zn(CH₃)₂⁺ (m/z 79–98) exclusively during the TMA exposure (blue line).\"}]}]","bbox":[{"panel_id":"c","x":18,"y":720,"width":646,"height":354},{"panel_id":"b","x":10,"y":340,"width":654,"height":361},{"panel_id":"a","x":4,"y":4,"width":661,"height":373}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":669,"height":1075,"image_format":"jpeg","image_sha256":"c71c049a2ff43dcc1b2a541ad7ae24fc773be655f5670664a1842a5f4afcf76d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_26_fig4.jpg","caption":"Fig.4. (a) $\\mathsf{I}_{\\mathsf{D}} - \\mathsf{V}_{\\mathsf{G}}$ before and after the initialization process. (b) $\\mathsf{V}_{\\mathsf{th}}$ error bar for both processes. (c) $\\mathsf{I}_{\\mathsf{D}} - \\mathsf{V}_{\\mathsf{D}}$ characteristics between two processes. (d) Compare the contact resistance of the two processes at the same etch depth. (e) Off-state leakage and breakdown voltage. (f) Gate breakdown voltage.","id":"train/atomic-layer-etching/experimental-usecase/26/fig4","sample_id":"atomic-layer-etching/experimental-usecase/26/fig4","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"box plot"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"bar chart"},{"panel_id":"e","label":"multiple line chart"},{"panel_id":"f","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A multiple line chart showing the relationship between gate voltage (V_G) and drain current (I_D) before and after a process.\"},{\"panel_id\":\"b\",\"text\":\"A box plot comparing the threshold voltage (Vth) for two different etching processes.\"},{\"panel_id\":\"c\",\"text\":\"A multiple line chart showing the drain current (I_D) as a function of drain voltage (V_D) for different ALE process and Cl2 etch.\"},{\"panel_id\":\"d\",\"text\":\"A bar chart showing the normalized resistance (Re.norm) for different etch cycles of Cl2 etch and the original state.\"},{\"panel_id\":\"e\",\"text\":\"A multiple line chart showing the leakage current as a function of drain voltage for different leakage types (ALE-drain leakage (ID), ALE-gate leakage (IG), Cl2 etch-drain leakage (ID), and CL2 etch-gate leakage (IG)).\"},{\"panel_id\":\"f\",\"text\":\"A line chart showing the gate current (I_G) as a function of gate voltage (V_G) for two different etching processes (ALE and CL2 etch).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| V_G (V) | I_D (mA/mm) before | I_D (mA/mm) after |\\n| --- | --- | --- |\\n| -10 | 1e-7 | - |\\n| -5 | 1e-7 | - |\\n| 0 | 1e2 | 1e-7 |\\n| 5 | - | 1e-7 |\\n| 10 | - | 1e2 |\"},{\"panel_id\":\"b\",\"text\":\"| Process | Vth |\\n| --- | --- |\\n| ALE | 5.04 ± 0.10 |\\n| Cl₂ etch | 4.84 ± 0.33 |\"},{\"panel_id\":\"c\",\"text\":\"| V_D (V) | I_D (mA/mm) Cl₂ etch | I_D (mA/mm) ALE |\\n| --- | --- | --- |\\n| 0 | 0 | 0 |\\n| 2 | 200 | 210 |\\n| 4 | 360 | 400 |\\n| 6 | 430 | 510 |\\n| 8 | 580 | 600 |\\n| 10 | 600 | 630 |\\n| 12 | 670 | 700 |\\n| 14 | 700 | 740 |\\n| 16 | 700 | 750 |\"},{\"panel_id\":\"d\",\"text\":\"| Etch cycle | Re.norm (Ω·mm) Cl₂ etch | Re.norm (Ω·mm) ALE |\\n| --- | --- | --- |\\n| 11 | 0.38 | - |\\n| 13 | 0.34 | - |\\n| 15 | 0.32 | - |\\n| 17 | 0.30 | - |\\n| 19 | 0.29 | - |\\n| 21 | 0.25 | - |\\n| 23 | 0.23 | - |\\n| 25 | 0.20 | - |\\n| 27 | 0.19 | - |\\n| 29 | 0.16 | - |\\n| Ori | - | 0.48 |\"},{\"panel_id\":\"e\",\"text\":\"| V_D (V) | ALE-ID | ALE-IG | Cl₂ etch ID | Cl₂ etch IG |\\n| --- | --- | --- | --- | --- |\\n| 0 | 1e-7 | 1e-7 | 1e-7 | 1e-7 |\\n| 300 | 1e-5 | 1e-5 | 1e-5 | 1e-5 |\\n| 600 | 1e-4 | 1e-5 | 1e-4 | 1e-5 |\\n| 900 | 1e-3 | 1e-4 | 1e-3 | 1e-4 |\\n| 1200 | 1e-2 | 1e-2 | 1e-2 | 1e-2 |\"},{\"panel_id\":\"f\",\"text\":\"| V_G (V) | I_G (mA/mm) ALE | I_G (mA/mm) Cl₂ etch |\\n| --- | --- | --- |\\n| 0 | 1e-5 | 1e-5 |\\n| 5 | 1e-5 | 1e-5 |\\n| 10 | 1e-5 | 1e-5 |\\n| 15 | 1e-4 | 1e-4 |\\n| 20 | 1e-3 | 1e-3 |\\n| 25 | 1e2 | - |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The normalized resistance is shown for the original sample, as well as the variation through different amounts of cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of cycles increases, the normalized resistance decreases from around 0.38 Ω·mm to 0.28 Ω·mm.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The initialization process results in a shift of 6.71 V.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As can be seen, the Cl2 etch-drain leakage (ID) curve shows higher leakage current values at different voltages.\"}]}]","bbox":[{"panel_id":"d","x":289,"y":245,"width":279,"height":205},{"panel_id":"b","x":289,"y":26,"width":276,"height":196},{"panel_id":"c","x":0,"y":243,"width":290,"height":204},{"panel_id":"e","x":0,"y":452,"width":286,"height":227},{"panel_id":"f","x":287,"y":452,"width":283,"height":226},{"panel_id":"a","x":0,"y":23,"width":290,"height":215}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/A Normally-Off GaN MIS-HEMT Fabricated.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":572,"height":681,"image_format":"jpeg","image_sha256":"5326bfa3d872587875b647f4bd5fb08e6f3dc381c32ff7b0e0024bfbc6119720","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_29_fig_4.jpg","caption":"FiG. 4. CL spectra of the AlGaN/GaN stacked film without etching, etched by RIE, and etched by ALE: (a) NBE of AlGaN and (b) NBE of GaN.","id":"train/atomic-layer-etching/experimental-usecase/29/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/29/fig_4","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the cathodoluminescence (CL) intensity of a material at different wavelengths after various treatments (initial, RIE, ALE).\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the cathodoluminescence (CL) intensity of a material at different wavelengths after various treatments (initial, RIE, ALE).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | CL Intensity (au) initial |CL Intensity (au) RIE |CL Intensity (au) ALE |\\n|---|---|---|---|\\n| 300 | 0 |0 |0 |\\n| 310 | 0 |0 |0 |\\n| 320 | 200 |50|20|\\n|326|500|200|100|\\n| 330 | 400 |100|50|\\n| 340 | 80 | 60|50|\\n| 350 | 200|200|200|\"},{\"panel_id\":\"b\",\"text\":\"| Wavelength (nm) | CL Intensity (au) initial |CL Intensity (au) RIE |CL Intensity (au) ALE |\\n|---|---|---|---|\\n| 340 | 0 |0 |0 |\\n| 350 | 0 |0 |0 |\\n| 360 | 5000 | 5000 | 5000 |\\n|365|12000|11000|9500|\\n| 370 | 4000 |4000 |4000 |\\n| 380 | 500 |500 |500 |\\n| 390 | 0 |0 |0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The peak intensity is observed at 350 nm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The maximum difference is around 1500 counts\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ALE seems to decrease the CL intensity the most, eventhough RIE also decreases the CL intensity a lot.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is likely caused by the chemically changing of the emitting material. ALE is likely the chemically change the surface, resulting in a bigger decrease in CL intensity\"}]}]","bbox":[{"panel_id":"b","x":2,"y":438,"width":539,"height":413},{"panel_id":"a","x":3,"y":0,"width":541,"height":429}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/Atomic layer etching of AlGaN using Cl2 and Ar gas.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":545,"height":855,"image_format":"jpeg","image_sha256":"be58d939027dbf1f192c5b4f21fca6e73ca233ad50bd92f53ddd7f8723073412","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_34_fig_4.jpg","caption":"FIG. 4. XPS Al 2p narrow scan spectra of (a) nonplasma-treated $\\mathrm{Al}_2\\mathrm{O}_3$ , (b) 50 W direct plasma at 2 Torr, (c) 50 W direct plasma at 0.6 Torr, and (d) 30 W remote plasma at 0.6 Torr for 300 s.","id":"train/atomic-layer-etching/experimental-usecase/34/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/34/fig_4","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"reflects different degrees of peak intensity and binding energy shift, enabling comparison of how plasma environment modifies the chemical state and surface composition of Al₂O₃ during CF₄-based processing.\"},{\"panel_id\":\"b\",\"text\":\"reflects different degrees of peak intensity and binding energy shift, enabling comparison of how plasma environment modifies the chemical state and surface composition of Al₂O₃ during CF₄-based processing.\"},{\"panel_id\":\"c\",\"text\":\"reflects different degrees of peak intensity and binding energy shift, enabling comparison of how plasma environment modifies the chemical state and surface composition of Al₂O₃ during CF₄-based processing.\"},{\"panel_id\":\"d\",\"text\":\"reflects different degrees of peak intensity and binding energy shift, enabling comparison of how plasma environment modifies the chemical state and surface composition of Al₂O₃ during CF₄-based processing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV)|counts/s|\\n|--------------------|--------|\\n|68|0|\\n|70|500|\\n|72|1000|\\n|74|2000|\\n|76|3000|\\n|78|4000|\\n|80|5000|\\n|82|6000|\\n|84|7000|\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV)|counts/s|\\n|--------------------|--------|\\n|68|0|\\n|70|500|\\n|72|1000|\\n|74|2000|\\n|76|3000|\\n|78|4000|\\n|80|5000|\\n|82|6000|\\n|84|7000|\"},{\"panel_id\":\"c\",\"text\":\"| Binding Energy (eV)|counts/s|\\n|--------------------|--------|\\n|68|0|\\n|70|500|\\n|72|1000|\\n|74|2000|\\n|76|3000|\\n|78|4000|\\n|80|5000|\\n|82|6000|\\n|84|7000|\"},{\"panel_id\":\"d\",\"text\":\"| Binding Energy (eV)|counts/s|\\n|--------------------|--------|\\n|68|0|\\n|70|500|\\n|72|1000|\\n|74|2000|\\n|76|3000|\\n|78|4000|\\n|80|5000|\\n|82|6000|\\n|84|7000|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Changes in the XPS spectra directly reflect modifications in surface chemistry caused by CF₄ plasma exposure. A reduction in peak intensity and slight binding-energy shifts suggest the formation of Al–F or AlOF species, indicating partial fluorination and oxygen depletion. These chemical changes affect etch efficiency, surface reactivity, and overall stability of the Al₂O₃ film. Understanding these spectral variations helps optimize plasma conditions for controlled atomic layer etching and improved device fabrication.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The non-plasma-treated sample (curve a) shows the highest peak intensity.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Peak intensity decreases for plasma-treated samples, Slight shifts in peak binding energies, Broadening of peaks at lower plasma power, Increased shoulder formation indicating fluorination or oxygen loss\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":498}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/CF4 plasma-based atomic layer etching of Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":669,"height":498,"image_format":"jpeg","image_sha256":"715e60cf88ad47316508cc418fc0bd6bad113721aa539620ad3a7e94e4987c85","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_8.jpg","caption":"Fig. 8. (Color online) Narrow-scan XPS spectra of the blanket $\\mathrm{TiO_2}$ surface and the film after $\\mathrm{C_4F_8}$ plasma and $\\mathrm{O_2}$ plasma treatment: (a) Ti 2p, (b) F 1s, and (c) C 1s.","id":"train/atomic-layer-etching/experimental-usecase/36/fig_8","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_8","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows XP-Spectrum of Ti2p region measured on a TiO₂ surface before and after C₄F₈ + O₂ plasma treatment.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays shows XP-Spectrum of F1s region measured on a TiO₂ surface before and after C₄F₈ + O₂ plasma treatment.\"},{\"panel_id\":\"c\",\"text\":\"The figure presents shows XP-Spectrum of C1s region measured on a TiO₂ surface before and after C₄F₈ + O₂ plasma treatment, highlighting peaks for C-C and O-C=O.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Measurement | Binding energy (eV) | Peak Intensity, a.u. | Assignment | \\n|---|---|---|---|\\n| as TiO₂ deposited | 464.4 | 21 | TiO₂ |\\n| as TiO₂ deposited | 458.7 | 71 | TiO₂ |\\n| Ti2p after C₄F₈ + O₂ plasma treatment | 465.0 | 16 | TiO₂ |\\n| Ti2p after C₄F₈ + O₂ plasma treatment | 459.1 | 54 | TiO₂ |\"},{\"panel_id\":\"b\",\"text\":\"| Measurement | Binding energy (eV) | Peak intensity, a.u. | Assignment | \\n|---|---|---|---|\\n| Ti2p after C₄F₈ + O₂ plasma treatment | 684.8 | 60 | F1s |\"},{\"panel_id\":\"c\",\"text\":\"| Measurement | Binding energy (eV) | Peak intensity, a.u. | Assignment | \\n|---|---|---|---|\\n| as TiO₂ deposited | 288.8 | 8 | O-C=O |\\n| as TiO₂ deposited | 284.8 | 67 | C-C |\\n| Ti2p after C₄F₈ + O₂ plasma treatment | 288.9 | 9 | O-C=O |\\n| Ti2p after C₄F₈ + O₂ plasma treatment | 284.8 | 63 | C-C |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The number of peaks can be explained with spin-orbit splitting. In this case, the 2p splits into two distinct energy states: j = 3/2 and j = 1/2. Because the difference in binding energy between states is larger than the instrument's resolution, they are clearly observed experimentally.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Ti 2p peaks for the plasma-treated sample are shifted slightly to higher binding energies compared to the pristine sample. The shift indicates that some fraction of titanium atoms are now bonded to a more electronegative element than oxygen, specifically fluorine. This confirms the formation of Ti-F bonds on the surface after the plasma treatment.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The state j = 3/2 corresponds to the peak at 458- 469 eV (this peak is statistically more probable and therefore has higher intensity). The state j = 1/2 corresponds to the peak at 464-465 eV . This state is less probable, and the peak is therefore smaller.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The peaks in C1s region can't come from TiO2 intself. Those peaks correspond to surface impurities, often referred to as \\\"adventitious carbon\\\". Even though the sample is \\\"pristine,\\\" exposure to air causes inevitable contamination.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":3,"width":665,"height":479},{"panel_id":"b","x":5,"y":494,"width":656,"height":493},{"panel_id":"c","x":0,"y":993,"width":668,"height":476}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":669,"height":1472,"image_format":"jpeg","image_sha256":"c80a8576d211da75629f6384c14785be0f80fe6f04f94caf905bfedfdd6cd990","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_9.jpg","caption":"Fig. 9. (Color online) Ion currents of thermal desorption spectroscopy (a) after $\\mathrm{C_4F_8}$ plasma treatment and (b) after $\\mathrm{O_2}$ plasma treatment. Mass-to-charge ratios of 67, 86, 105, and 124 correspond to TiF, $\\mathrm{TiF_2}$ , $\\mathrm{TiF_3}$ , and $\\mathrm{TiF_4}$ , respectively.","id":"train/atomic-layer-etching/experimental-usecase/36/fig_9","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_9","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart displays the thermal desorption profile of titanium fluoride species. Significant ion current peaks are observed for TiF, TiF2, TiF3 and TiF4.\"},{\"panel_id\":\"b\",\"text\":\"TThe line chart displays the thermal desorption profile of titanium fluoride species. Significant ion current peaks are observed only for TiF, TiF2, TiF3 and TiF4 are showing negligible signal intensity.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| m/z + species | temperature (°C) | Ion current, (pA) | \\n|---|---|---|\\n| m/z 67 TiF | 222 | 0.1 |\\n| m/z 67 TiF | 386 | 0.66 |\\n| m/z 67 TiF | 468 | 0.98 |\\n| m/z 67 TiF | 605 | 0.36 |\\n| m/z 67 TiF | 807 | 0.21 |\\n| m/z 86 TiF2 | 357 | 0.23 |\\n| m/z 86 TiF2 | 466 | 0.13 |\\n| m/z 86 TiF2 | 781 | 0.10 |\\n| m/z 105 TiF3 | 368 | 0.35 |\\n| m/z 105 TiF3 | 431 | 0.18 |\\n| m/z 105 TiF3 | 470 | 0.33 |\\n| m/z 124 TiF4 | 341 | 0.35 |\\n| m/z 124 TiF4 | 465 | 0.11 |\"},{\"panel_id\":\"b\",\"text\":\"| m/z + species | temperature (°C) | Ion current, (pA) | \\n|---|---|---|\\n| m/z 67 TiF | 376 | 0.16 |\\n| m/z 67 TiF | 715 | 0.05 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiF and TiF₃.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There are two distinct temperature peaks (at ~350°C and ~450°C). The chemical composition of each peak is also different. The first type (~350°C) dissociates into TiF, TiF₂, TiF₃, and TiF₄, and the second type (~450°C) into TiF and TiF₃. . These differences are the evidence that the sample contains two chemically distinct forms of titanium fluoride.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. While the significant desorption peaks for TiF₂, TiF₃ and TiF₄ disappeared, TiF still shows a small residual signal after the O₂ plasma treatment. It is indicating that titanium fluorides were not removed completely.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"One (TiF)\"}]}]","bbox":[{"panel_id":"a","x":4,"y":0,"width":663,"height":463},{"panel_id":"b","x":2,"y":473,"width":661,"height":457}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":669,"height":933,"image_format":"jpeg","image_sha256":"2024e22cde17ea165565b5bfeb0a13318c52730b34e37aff036e468db98e951f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_43_fig_1.jpg","caption":"Fig. 1. Mass change as a function of processing time (a) during the first 30 ALE cycles and (b) during an ALE cycle. The wafer temperature was $250^{\\circ}\\mathrm{C}$ , and the ALE cycle consisted of an $\\mathrm{NF}_3$ remote plasma, a purge, a TMA pulse, and a purge. $\\Delta \\mathrm{M}_{\\mathrm{Al2O3}}$ indicates the mass loss by an ALE cycle. $\\Delta \\mathrm{M}_{\\mathrm{NF3}}$ and $\\Delta \\mathrm{M}_{\\mathrm{TMA}}$ denote the mass change by $\\mathrm{NF}_3$ remote plasma and TMA pulse, respectively.","id":"train/atomic-layer-etching/experimental-usecase/43/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/43/fig_1","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents in situ Quartz Crystal Microbalance (QCM) data tracking the mass changes during the atomic layer etching of Al₂O₃ at 250 °C. The line chart shows the cumulative mass change over 30 ALE cycles, displaying a linear downward trend (negative slope), which indicates a constant etch rate throughout the process.\"},{\"panel_id\":\"b\",\"text\":\"The line chart shows the details a single ALE cycle. It shows a mass increase (ΔM_{NF₃}) during the NF₃ plasma step due to fluorination, followed by a sharp mass decrease during the TMA step (ΔM_{TMA}), resulting in a net negative mass change (ΔM_{Al₂O₃}) relative to the initial baseline.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Process Time (s) | Mass Change (ng/cm²) |\\n|------------------|-----------------------|\\n| 0 | 200 |\\n| 100 | 260 |\\n| 200 | 150 |\\n| 300 | 180 |\\n| 400 | 120 |\\n| 500 | 180 |\\n| 600 | 80 |\\n| 700 | 160 |\\n| 800 | 40 |\\n| 900 | 140 |\\n| 1000 | 0 |\\n| 1100 | 120 |\\n| 1200 | -40 |\\n| 1300 | 100 |\\n| 1400 | -80 |\\n| 1500 | 80 |\\n| 1600 | -120 |\\n| 1700 | 60 |\\n| 1800 | -160 |\\n| 1900 | 40 |\\n| 2000 | -200 |\\n| 2100 | 20 |\\n| 2200 | -240 |\\n| 2300 | 0 |\\n| 2400 | -280 |\\n| 2500 | -20 |\\n| 2600 | -320 |\\n| 2700 | -40 |\\n| 2800 | -360 |\\n| 2900 | -60 |\\n| 3000 | -400 |\\n| 3100 | -80 |\\n| 3200 | -440 |\\n| 3300 | -100 |\\n| 3400 | -480 |\\n| 3500 | -120 |\\n| 3600 | -520 |\\n| 3700 | -140 |\\n| 3800 | -560 |\\n| 3900 | -160 |\\n| 4000 | -600 |\\n| 4100 | -180 |\\n| 4200 | -640 |\\n| 4300 | -200 |\\n| 4400 | -680 |\\n| 4500 | -220 |\\n| 4600 | -720 |\\n| 4700 | -240 |\\n| 4800 | -760 |\\n| 4900 | -260 |\\n| 5000 | -800 |\\n| 5100 | -280 |\\n| 5200 | -840 |\\n| 5300 | -300 |\\n| 5400 | -880 |\\n| 5500 | -320 |\\n| 5600 | -920 |\\n| 5700 | -340 |\\n| 5800 | -960 |\\n| 5900 | -360 |\\n| 6000 | -1000 |\\n| 6100 | -380 |\\n| 6200 | -1040 |\\n| 6300 | -400 |\"},{\"panel_id\":\"b\",\"text\":\"| Process Time (s) | Mass Change (ng/cm²) of NF3 Plasma | Mass Change (ng/cm²) of TMA |\\n|------------------|-------------------------|-------------------------|\\n| 6398 | -843 | -- |\\n| 6407 | -882 | -- |\\n| 6414 | -746 | -- |\\n| 6419 | -556 | -- |\\n| 6426 | -644 | -- |\\n| 6437 | -765 | -- |\\n| 6480 | -798 | -- |\\n| 6518 | -800 | -- |\\n| 6587 | -800 | -- |\\n| 6525 | -- | -854 |\\n| 6531 | -- | -698 |\\n| 6534 | -- | -611 |\\n| 6544 | -- | -746 |\\n| 6558 | -- | -843 |\\n| 6587 | -- | -864 |\\n| 6634 | -- | -870 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE process is required. Continuous plasma etching has no inherent stop mechanism and would rapidly etch through the underlying Si. ALE provides digital etch control; each cycle removes a known, self-limiting thickness (ΔM_Al₂O₃). By counting cycles, you can stop precisely at the Al₂O₃/Si interface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This linearity implies excellent process robustness and predictability, which is critical for manufacturing. It confirms that the surface chemistry is stable and self-limiting cycle after cycle, enabling precise depth control by simply counting cycles. This reproducibility allows the etch depth to be determined by the number of cycles run, meeting strict manufacturing tolerances.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"NF₃ plasma: Mass increases due to surface fluorination.\\n\\nPurge\\n\\nTMA pulse: A brief mass rise occurs from adsorption, followed by a rapid mass drop caused by ligand exchange and volatilization.\\n\\nPurge: The mass stabilizes at a new, lower baseline after by-product removal.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The NF₃ step fluorinates the Al₂O₃ surface, adding fluorine atoms to form an AlFₓ or AlOₓFᵧ layer, which increases the mass. The TMA step reacts with this fluorinated layer, forming volatile AlF₃ and removing both the newly added fluorine and underlying aluminum/oxygen atoms, resulting in a net mass loss greater than the initial gain.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":0,"width":619,"height":603},{"panel_id":"b","x":3,"y":629,"width":611,"height":588}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/Surface reaction during thermal atomic layer etching of aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":623,"height":1219,"image_format":"jpeg","image_sha256":"56451c754ed1c097f2b0683f2e7ae2166b2a1c89da8d7a73b10a13540fab6988","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_43_fig_2.jpg","caption":"Fig. 2. Al 2p XPS peak from $\\mathrm{Al_2O_3}$ films (a) after fluorination step, (b) after full cycles of ALE.","id":"train/atomic-layer-etching/experimental-usecase/43/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/43/fig_2","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The XPS (X-ray photoelectron spectroscopy) graph shows the Al 2p peaks after fluorination, with features corresponding to Al–O, AlOxFy, and Al–F. The intensity vs. binding energy spectrum confirms modification of the Al₂O₃ film, with deconvoluted peaks at 74.5, 75.8, and 76.5 eV assigned to Al–O, AlOxFy, and Al–F, indicating the formation of AlF₃ and AlOxFy by F radicals.\"},{\"panel_id\":\"b\",\"text\":\"The XPS (X-ray photoelectron spectroscopy) graph shows the Al 2p peaks after fluorination, with features corresponding to Al–O and AlOxFy. The intensity vs. binding energy spectrum confirms modification of the Al₂O₃ film, with deconvoluted peaks at 74.5, 75.8, and 76.5 eV assigned to Al–O, AlOxFy, indicating the formation of AlF₃ and AlOxFy by F radicals.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Species label | Approx. binding energy (eV) | \\n|---------------|-----------------------------|\\n| Al–O | 74.5–75.0 | \\n| AlOₓFᵧ | 74.0–74.5 | \\n| Al–F | 73.5–74.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"State (a) is more desirable because the presence of a distinct Al–F peak implies a complete, stoichiometric conversion of the surface layer to a stable fluoride. State (b) represents an intermediate oxyfluoride which may react less cleanly or slowly with the TMA.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"State (a): The surface contains Al–O, AlOₓFᵧ, and Al–F species.\\nState (b): The surface contains Al–O and AlOₓFᵧ species, with Al–F fully removed.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Fluorine atoms replace oxygen, forming Al–F bonds. Fluorine is more electronegative than oxygen, increasing the positive charge on the Al atom, which requires more energy to eject a core electron (Al 2p), causing a higher binding energy shift. Multiple states appear because fluorination is a gradient process; the surface converts fully to Al–F, while subsurface regions have mixed Al–OₓFᵧ, and the bulk remains Al–O.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, A uniform, digital ALE process requires a sharp, fully converted interface between the fluorinated layer and the pristine Al₂O₃ beneath. The broad Al–OₓFᵧ peak indicates a graded, partially reacted transition zone. This gradient would lead to non-uniform etch depths and poor atomic-scale control, as the TMA step would not remove a well-defined monolayer.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":0,"width":632,"height":725},{"panel_id":"b","x":17,"y":782,"width":616,"height":736}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/Surface reaction during thermal atomic layer etching of aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":639,"height":1539,"image_format":"jpeg","image_sha256":"11da792511df27741981c80754d766d807ff2f245c67e6fea72e14fab7884079","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_45_figure_11.jpg","caption":"Figure 11 shows the XRR scans of the initial TiN film on the Si wafer and the TiN films after various numbers of ALE cycles Figure 11. X-ray reflectivity scans versus number of $\\mathrm{H}_2\\mathrm{O}_2$ and HF reaction cycles on TiN films at $250^{\\circ}\\mathrm{C}$","id":"train/atomic-layer-etching/experimental-usecase/45/figure_11","sample_id":"atomic-layer-etching/experimental-usecase/45/figure_11","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure displays XRR scans for TiN films before and after different numbers of thermal ALE cycles using H₂O₂ and HF at 250°C. Five scans are shown: initial TiN (a), and after 50 (b), 100 (c), 200 (d), and 400 (e) ALE cycles. The progressive changes in the curves demonstrate systematic film thickness reduction with increasing cycles, confirming effective etching at 0.15 Å/cycle. The interference fringe evolution also indicates surface smoothing during the ALE process.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| omega-2theta (arcsec) | (a) TiN (Intensity) | (b) 50c ALE (Intensity) | (c) 100c ALE (Intensity) | (d) 200c ALE (Intensity) | (e) 400c ALE (Intensity) |\\n|---|---|---|---|---|---|\\n| 1000 | 1.5e11 | 6.0e9 | 2.0e8 | 6.0e6 | 2.0e5 |\\n| 2000 | 8.0e9 | 3.0e8 | 5.0e6 | 1.0e5 | 3.0e3 |\\n| 3000 | 6.0e8 | 1.0e6 | 1.0e5 | 6.0e3 | 3.0e2 |\\n| 4000 | 3.0e9 | 1.0e7 | 2.5e5 | 1.5e3 | 1.0e2 |\\n| 5000 | 8.0e8 | 3.0e6 | 8.0e4 | 6.0e2 | 4.0e1 |\\n| 6000 | 1.0e8 | 3.0e5 | 3.0e4 | 3.0e2 | 1.5e1 |\\n| 7000 | 3.0e7 | 6.0e5 | 1.5e4 | 1.5e2 | 1.0e1 |\\n| 8000 | 1.0e7 | 1.0e5 | 1.0e4 | 1.0e2 | 6.0e0 |\\n| 9000 | 5.0e6 | 5.0e4 | 6.0e3 | 8.0e1 | 3.0e0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the number of ALE cycles increases from 0 to 400, the XRR curves show systematic changes reflecting progressive film thickness reduction. The interference oscillations shift and change in periodicity, correlating with decreasing film thickness from approximately 63 Å initially to much thinner values after 400 cycles. Additionally, the amplitude and sharpness of oscillation features change, indicating that surface roughness decreases during etching, from 9.3 Å initially to 6.5 Å after 100 cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.15 Å/cycle by spectroscopic ellipsometry and 0.14 Å/cycle by XRR.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"XRR provides quantitative information about film thickness, electron density, and surface roughness. The angular positions and periodicity of interference fringes directly relate to film thickness, with thinner films producing wider spaced oscillations. The rate of intensity decay with increasing angle is sensitive to surface roughness, where rougher surfaces cause faster intensity falloff. These measurements confirmed both the linear thickness reduction and surface smoothing during TiN ALE.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"(a) initial TiN film, (b) after 50 ALE cycles, (c) after 100 cycles, (d) after 200 cycles, (e) after 400 cycles.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":669,"height":666}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/Thermal Atomic Layer Etching of Titanium Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":675,"height":672,"image_format":"jpeg","image_sha256":"53c86e16d502824778d009a042d2e929dc3e7807503ce1d79f770545873f37c6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_45_figure_6.jpg","caption":"Figure 6. X-ray reflectivity scans versus number of $\\mathrm{O}_3$ and HF reaction cycles on TiN films at $250^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/45/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/45/figure_6","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows XRR scans for TiN films before and after various numbers of ALE cycles using O₃ and HF at 250°C. Six scans are displayed: initial TiN (a), and after 50 (b), 100 (c), 150 (d), 200 (e), and 300 (f) ALE cycles. The interference fringes progressively change with cycle number, reflecting linear film thickness reduction at approximately 0.20 Å/cycle. The curves also reveal decreasing surface roughness from 9.3 Å initially to 7.5 Å after 100 cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ω-2θ (arcsec) | TiN | 50c ALE | 100c ALE | 150c ALE | 200c ALE | 300c ALE |\\n|---|---|---|---|---|---|---|\\n| 1000 | 10^8 | 10^6 | 10^4 | 10^2 | 10^0 | 10^-2 |\\n| 2000 | 10^9 | 10^7 | 10^5 | 10^3 | 10^1 | 10^-1 |\\n| 3000 | 10^10 | 10^8 | 10^6 | 10^4 | 10^2 | 10^0 |\\n| 4000 | 10^11 | 10^9 | 10^7 | 10^5 | 10^3 | 10^1 |\\n| 5000 | 10^12 | 10^10 | 10^8 | 10^6 | 10^4 | 10^2 |\\n| 6000 | 10^13 | 10^11 | 10^9 | 10^7 | 10^5 | 10^3 |\\n| 7000 | 10^14 | 10^12 | 10^10 | 10^8 | 10^6 | 10^4 |\\n| 8000 | 10^15 | 10^13 | 10^11 | 10^9 | 10^7 | 10^5 |\\n| 9000 | 10^16 | 10^14 | 10^12 | 10^10 | 10^8 | 10^6 |\\n| 10000 | 10^17 | 10^15 | 10^13 | 10^11 | 10^9 | 10^7 |\"},{\"panel_id\":\"b\",\"text\":\"| ω-2θ (arcsec) | TiN | 50c ALE | 100c ALE | 150c ALE | 200c ALE | 300c ALE |\\n|---|---|---|---|---|---|---|\\n| 1000 | 10^8 | 10^6 | 10^4 | 10^2 | 10^0 | 10^-2 |\\n| 2000 | 10^9 | 10^7 | 10^5 | 10^3 | 10^1 | 10^-1 |\\n| 3000 | 10^10 | 10^8 | 10^6 | 10^4 | 10^2 | 10^0 |\\n| 4000 | 10^11 | 10^9 | 10^7 | 10^5 | 10^3 | 10^1 |\\n| 5000 | 10^12 | 10^10 | 10^8 | 10^6 | 10^4 | 10^2 |\\n| 6000 | 10^13 | 10^11 | 10^9 | 10^7 | 10^5 | 10^3 |\\n| 7000 | 10^14 | 10^12 | 10^10 | 10^8 | 10^6 | 10^4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The XRR measurements reveal progressive surface smoothing during TiN ALE. The initial TiN film had a roughness of 9.3 Å. After 25, 50, and 100 ALE cycles, the roughness decreased to 8.5, 8.2, and 7.5 Å respectively. This smoothing effect is consistent with previous observations for Al₂O₃ and HfO₂ ALE using fluorination and ligand exchange reactions, and represents a beneficial feature of the thermal ALE process.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 0.20 Å/cycle by XRR and 0.19 Å/cycle by spectroscopic ellipsometry.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No TiN etching was observed when using O₂ instead of O₃ with HF. Although the oxidation of TiN by O₂ is thermochemically favorable, at temperatures below 350°C, O₂ only slowly forms a thin TiO₂ layer and creates an intermediate titanium oxynitride (TiOₓNᵧ) phase. The strong oxidizing ability of O₃ is necessary to fully convert TiN or TiOₓNᵧ to TiO₂, which can then be etched by HF to form volatile TiF₄.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The logarithmic scale (10⁰ to 10¹⁴) indicates the curves are vertically offset for visual comparison rather than showing absolute intensities.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":0,"width":667,"height":682}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/Thermal Atomic Layer Etching of Titanium Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":672,"height":684,"image_format":"jpeg","image_sha256":"3bcae7058e22a1505cbe3fe1353b301f1b2e2a9546f680e21b9d1bafefda705d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_15.jpg","caption":"Figure 15. High resolution XPS scans of (a) Ti 2p and (b) Ti 1s regions for $4\\mathrm{mm}$ $\\mathrm{TiO_2}$ film following 0, 25, 50, 100, 150, and $200\\mathrm{W}\\mathrm{F}_6 / \\mathrm{BCl}_3$ cycles in the ALE reactor at $170^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/46/figure_15","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_15","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows high-resolution XPS Ti 2p binding energy spectra recorded at different ALE cycle numbers, illustrating the progressive reduction and eventual disappearance of the Ti–O doublet as the TiO₂ film is etched away.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows high-resolution XPS F 1s binding energy spectra measured at different ALE cycle numbers, indicating low and stable fluorine content with only minor metal-fluoride contributions during the etching process.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Counts (a.u.) | ALE Cycles | Peak Presence |\\n|--------------------|--------------|------------|---------------|\\n| 470 | 8500 | 0 | No peak |\\n| 470 | 12000 | 25 | No peak |\\n| 470 | 15000 | 50 | No peak |\\n| 470 | 18000 | 100 | No peak |\\n| 470 | 22000 | 150 | No peak |\\n| 470 | 26000 | 200 | No peak |\\n| 468 | 9000 | 0 | No peak |\\n| 468 | 13000 | 25 | No peak |\\n| 468 | 16000 | 50 | No peak |\\n| 468 | 20000 | 100 | No peak |\\n| 468 | 24000 | 150 | No peak |\\n| 468 | 28000 | 200 | No peak |\\n| 466 | 10000 | 0 | Ti–O |\\n| 466 | 14500 | 25 | Ti–O |\\n| 466 | 19000 | 50 | Ti–O |\\n| 466 | 23000 | 100 | Ti–O |\\n| 466 | 27000 | 150 | Ti–O |\\n| 466 | 31000 | 200 | Ti–O |\\n| 464 | 10500 | 0 | Ti–O |\\n| 464 | 15500 | 25 | Ti–O |\\n| 464 | 20000 | 50 | Ti–O |\\n| 464 | 24500 | 100 | Ti–O |\\n| 464 | 30000 | 150 | Ti–O |\\n| 464 | 34000 | 200 | Ti–O |\\n| 462 | 9800 | 0 | No peak |\\n| 462 | 14000 | 25 | No peak |\\n| 462 | 18000 | 50 | No peak |\\n| 462 | 22000 | 100 | No peak |\\n| 462 | 26000 | 150 | No peak |\\n| 462 | 30000 | 200 | No peak |\\n| 460 | 12000 | 0 | Ti–O |\\n| 460 | 17000 | 25 | Ti–O |\\n| 460 | 22000 | 50 | Ti–O |\\n| 460 | 27000 | 100 | Ti–O |\\n| 460 | 31000 | 150 | Ti–O |\\n| 460 | 36000 | 200 | Ti–O |\\n| 458 | 18000 | 0 | Ti–O |\\n| 458 | 23000 | 25 | Ti–O |\\n| 458 | 27000 | 50 | Ti–O |\\n| 458 | 31000 | 100 | Ti–O |\\n| 458 | 35000 | 150 | Ti–O |\\n| 458 | 39000 | 200 | Ti–O |\\n| 456 | 11000 | 0 | No peak |\\n| 456 | 15000 | 25 | No peak |\\n| 456 | 19000 | 50 | No peak |\\n| 456 | 23000 | 100 | No peak |\\n| 456 | 27000 | 150 | No peak |\\n| 456 | 31000 | 200 | No peak |\\n| 454 | 9000 | 0 | No peak |\\n| 454 | 13000 | 25 | No peak |\\n| 454 | 17000 | 50 | No peak |\\n| 454 | 21000 | 100 | No peak |\\n| 454 | 25000 | 150 | No peak |\\n| 454 | 29000 | 200 | No peak |\\n| 452 | 8500 | 0 | No peak |\\n| 452 | 12000 | 25 | No peak |\\n| 452 | 15000 | 50 | No peak |\\n| 452 | 19000 | 100 | No peak |\\n| 452 | 23000 | 150 | No peak |\\n| 452 | 27000 | 200 | No peak |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Counts (a.u.) | ALE Cycles | Peak Presence |\\n|--------------------|--------------|------------|---------------|\\n| 695 | 6200 | 0 | No peak |\\n| 695 | 6600 | 25 | No peak |\\n| 695 | 7000 | 50 | No peak |\\n| 695 | 7400 | 100 | No peak |\\n| 695 | 7800 | 150 | No peak |\\n| 695 | 8200 | 200 | No peak |\\n| 692 | 6400 | 0 | No peak |\\n| 692 | 6900 | 25 | No peak |\\n| 692 | 7300 | 50 | No peak |\\n| 692 | 7700 | 100 | No peak |\\n| 692 | 8200 | 150 | No peak |\\n| 692 | 8600 | 200 | No peak |\\n| 690 | 6500 | 0 | F–C |\\n| 690 | 7000 | 25 | F–C |\\n| 690 | 7600 | 50 | F–C |\\n| 690 | 8200 | 100 | F–C |\\n| 690 | 8900 | 150 | F–C |\\n| 690 | 9300 | 200 | F–C |\\n| 688 | 6300 | 0 | No peak |\\n| 688 | 6700 | 25 | No peak |\\n| 688 | 7100 | 50 | No peak |\\n| 688 | 7500 | 100 | No peak |\\n| 688 | 8000 | 150 | No peak |\\n| 688 | 8400 | 200 | No peak |\\n| 686 | 6500 | 0 | F–M |\\n| 686 | 6900 | 25 | F–M |\\n| 686 | 7400 | 50 | F–M |\\n| 686 | 8100 | 100 | F–M |\\n| 686 | 8700 | 150 | F–M |\\n| 686 | 9100 | 200 | F–M |\\n| 684 | 6300 | 0 | No peak |\\n| 684 | 6600 | 25 | No peak |\\n| 684 | 7000 | 50 | No peak |\\n| 684 | 7400 | 100 | No peak |\\n| 684 | 7800 | 150 | No peak |\\n| 684 | 8200 | 200 | No peak |\\n| 682 | 6200 | 0 | No peak |\\n| 682 | 6500 | 25 | No peak |\\n| 682 | 6900 | 50 | No peak |\\n| 682 | 7200 | 100 | No peak |\\n| 682 | 7600 | 150 | No peak |\\n| 682 | 8000 | 200 | No peak |\\n| 680 | 6150 | 0 | No peak |\\n| 680 | 6450 | 25 | No peak |\\n| 680 | 6850 | 50 | No peak |\\n| 680 | 7150 | 100 | No peak |\\n| 680 | 7500 | 150 | No peak |\\n| 680 | 7850 | 200 | No peak |\\n| 678 | 6100 | 0 | No peak |\\n| 678 | 6400 | 25 | No peak |\\n| 678 | 6800 | 50 | No peak |\\n| 678 | 7100 | 100 | No peak |\\n| 678 | 7450 | 150 | No peak |\\n| 678 | 7800 | 200 | No peak |\\n| 676 | 6050 | 0 | No peak |\\n| 676 | 6350 | 25 | No peak |\\n| 676 | 6750 | 50 | No peak |\\n| 676 | 7050 | 100 | No peak |\\n| 676 | 7400 | 150 | No peak |\\n| 676 | 7750 | 200 | No peak |\\n| 675 | 6000 | 0 | No peak |\\n| 675 | 6300 | 25 | No peak |\\n| 675 | 6700 | 50 | No peak |\\n| 675 | 7000 | 100 | No peak |\\n| 675 | 7350 | 150 | No peak |\\n| 675 | 7700 | 200 | No peak |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Finish 100 ALE cycles.\\n\\n, Cool under inert gas.\\n\\n, Transfer to XPS without air.\\n\\n, Acquire spectra.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"WF₆/BCl₃ is better. It leaves no carbon residue, unlike CF₄ plasma.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ti–O bonds decrease. Ti–F bonds increase. Fluorination makes the surface volatile for etching.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process is stable and predictable. Etch depth can be controlled precisely by cycle count.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":428,"height":338},{"panel_id":"b","x":439,"y":3,"width":432,"height":334}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":873,"height":341,"image_format":"jpeg","image_sha256":"72b5d02ac39221a4cf26d08ed177c57d8c9378d813e7315bf97c0d066e92b035","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_4.jpg","caption":"Figure 4. High resolution XPS scans of (a) Ti $2\\mathrm{p}$ , (b) Si $2\\mathrm{p}$ , (c) W $4\\mathrm{f}$ , and (d) F $1\\mathrm{s}$ regions for $\\sim 6.5 \\mathrm{nm} \\mathrm{TiO}_2$ films exposed to $0$ , $1$ , $5$ , and $15 \\mathrm{WF}_6$ doses at $220^{\\circ}C$","id":"train/atomic-layer-etching/experimental-usecase/46/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_4","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents high-resolution X-ray Photoelectron Spectroscopy (XPS) scans tracking surface chemistry changes of a ~6.5 nm TiO₂ film during WF₆ exposure at 220°C. Ti 2p Region: The persistent Ti–O doublet confirms the presence of the TiO₂ film throughout the process. The intensity changes indicate partial modification or thinning of the oxide during etching.\"},{\"panel_id\":\"b\",\"text\":\"Si 2p Region: Initially (0 Doses, black line), the signal is negligible. As WF₆ doses increase (red → pink), distinct Si–Si (substrate) and Si–O (interface) peaks appear, indicating thinning of the TiO₂ film and exposure of the underlying silicon wafer.\"},{\"panel_id\":\"c\",\"text\":\"Tungsten Residue (W 4f Region): Shows accumulation of tungsten-containing species, overlapping with Ti–O signals, indicating incorporation or adsorption of WF₆ reaction products on the surface.\"},{\"panel_id\":\"d\",\"text\":\"Fluorine Residue (F 1s Region): Tracks the buildup of fluorine on the surface (F–M and F–C), confirming surface fluorination during WF₆ exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Counts (a.u.) | WF₆ Doses | Peak |\\n|---------------------|---------------|-----------|--------|\\n| 468 | 5200 | 0 | |\\n| 468 | 12000 | 1 | |\\n| 468 | 20000 | 5 | |\\n| 468 | 27000 | 15 | |\\n| 465 | 9800 | 0 | Ti-O |\\n| 465 | 17000 | 1 | Ti–O |\\n| 465 | 24000 | 5 | Ti–O |\\n| 465 | 32000 | 15 | Ti–O |\\n| 462 | 5400 | 0 | |\\n| 462 | 12000 | 1 | |\\n| 462 | 20000 | 5 | |\\n| 462 | 27000| 15 | |\\n| 460 | 6600 | 0 | |\\n| 460 | 16000 | 1 | |\\n| 460 | 22000 | 5 | |\\n| 460 | 30000 | 15 | |\\n| 459 | 20000 | 0 | Ti–O |\\n| 459 | 26000 | 1 | Ti–O |\\n| 459 | 33000 | 5 | Ti–O |\\n| 459 | 41000 | 15 | Ti–O |\\n| 456 | 8000 | 0 | |\\n| 456 | 14000 | 1 | |\\n| 456 | 22000 | 5 | |\\n| 456 | 30000 | 15 | |\\n| 452 | 3200 | 0 | |\\n| 452 | 10000 | 1 | |\\n| 452 | 18000 | 5 | |\\n| 452 | 26000 | 15 | |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Counts (a.u.) | WF₆ Doses | Peak|\\n|---------------------|---------------|-----------|--------|\\n| 106 | 780 | 0 | |\\n| 106 | 1050 | 1 | |\\n| 106 | 1350 | 5 | |\\n| 106 | 1550 | 15 | |\\n| 102 | 820 | 0 | Si–O |\\n| 102 | 1100 | 1 | Si–O |\\n| 102 | 1400 | 5 | Si–O |\\n| 102 | 1650 | 15 | Si–O |\\n| 98 | 1050 | 0 | Si–Si |\\n| 98 | 1350 | 1 | Si–Si |\\n| 98 | 1600 | 5 | Si–Si |\\n| 98 | 1850 | 15 | Si–Si |\\n| 94 | 780 | 0 | |\\n| 94 | 1050 | 1 | |\\n| 94 | 1300 | 5 | |\\n| 94 | 1500 | 15 | |\"},{\"panel_id\":\"c\",\"text\":\"| Binding Energy (eV) | Counts (a.u.) | WF₆ Doses | Peak |\\n|---------------------|---------------|-----------|--------|\\n| 42 | 650 | 0 | |\\n| 42 | 1600 | 1 | |\\n| 42 | 2400 | 5 | |\\n| 42 | 3200 | 15 | |\\n| 40 | 600 | 0 | |\\n| 40 | 1600 | 1 | |\\n| 40 | 2400 | 5 | |\\n| 40 | 3200 | 15 | |\\n| 38 | 2200 | 0 | W–O |\\n| 38 | 3600 | 1 | W–O |\\n| 38 | 4700 | 5 | W–O |\\n| 38 | 5400 | 15 | W–O |\\n| 36 | 2000 | 0 | Ti–O |\\n| 36 | 3200 | 1 | Ti–O |\\n| 36 | 4200 | 5 | Ti–O |\\n| 36 | 5000 | 15 | Ti–O |\\n| 32 | 400 | 0 | |\\n| 32 | | 1 | |\\n| 32 | 1900 | 5 | |\\n| 32 | 2600 | 15 | |\\n| 30 | 400 | 0 | |\\n| 30 | | 1 | |\\n| 30 | | 5 | |\\n| 30 | 2500 | 15 | |\"},{\"panel_id\":\"d\",\"text\":\"| Binding Energy (eV) | Counts (a.u.) | WF₆ Doses | Peak|\\n|---------------------|---------------|-----------|--------|\\n| 695 | 7400 | 0 | |\\n| 695 | | 1 | |\\n| 695 | | 5 | |\\n| 695 | 10400 | 15 | |\\n| 690 | 8300 | 0 | F–C |\\n| 690 | 8700 | 1 | |\\n| 690 | 9800 | 5 | |\\n| 690 | 10800 | 15 | |\\n| 685 | 7500 | 0 | |\\n| 685 | 8900 | 1 | F–M |\\n| 685 | 10200 | 5 | F–M |\\n| 685 | 11500 | 15 | F–M |\\n| 680 | | 0 | |\\n| 680 | 8600 | 1 | |\\n| 680 | 9700 | 5 | |\\n| 680 | 10400 | 15 | |\\n| 675 | | 0 | |\\n| 675 | 8500 | 1 | |\\n| 675 | 9600 | 5 | |\\n| 675 | 10300 | 15 | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thermal WF₆ vapor process is preferable for conformality. WF₆ molecules can diffuse evenly into deep structures for a uniform surface reaction. Plasma CF₄ processes suffer from poor conformality due to short radical lifetimes, directional ions, and charging effects in high-aspect-ratio features, leading to non-uniform fluorination.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TiO₂ surface is progressively fluorinated and modified. Ti–O bonds (Ti 2p) decrease while Ti–F bonds form (shifted Ti 2p, F 1s). Simultaneously, a tungsten oxyfluoride (W–O–F) layer forms (W 4f), and fluorine incorporates (F 1s). The final surface is a mixture of titanium fluoride and a tungsten-containing passivation/interface layer.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the first few ALE cycles will have a different and evolving etch rate. The surface must be converted to a steady-state tungsten-modified layer before consistent, self-limiting etch behavior is achieved. This nucleation period mirrors the incubation seen in QCM data and must be accounted for in process design to ensure etch uniformity.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Film thinning / etching. The appearance of the silicon substrate signals indicates that the TiO₂ overlayer has been significantly etched away, allowing photoelectrons from the underlying Si wafer and interfacial SiO₂ to escape and be detected.\"}]}]","bbox":[{"panel_id":"a","x":9,"y":12,"width":467,"height":378},{"panel_id":"b","x":493,"y":16,"width":489,"height":373},{"panel_id":"c","x":11,"y":407,"width":474,"height":364},{"panel_id":"d","x":502,"y":400,"width":489,"height":371}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":992,"height":775,"image_format":"jpeg","image_sha256":"58994b56911823ae13afd50c7b1b51c00dbe7eef3bdeff783d1c9070bbeb9f9e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_9.jpg","caption":"Figure 9. High resolution XPS scans of (a) Ti 2p, (b) F 1s, (c) W 4f, and (d) Sn 3d regions for $6.5 \\mathrm{nm} \\mathrm{TiO}_2$ films following 0, 15, and $25 \\mathrm{WF}_6 / \\mathrm{Ar} / \\mathrm{Sn}(\\mathrm{acac})_2 / \\mathrm{Ar}$ cycles at $220^{\\circ} \\mathrm{C}$ and 1.75 Torr.","id":"train/atomic-layer-etching/experimental-usecase/46/figure_9","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_9","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents high-resolution XPS spectra tracking the surface chemistry evolution of a TiO₂ film after 0, 15, and 25 cycles of a WF₆/Ar/Sn(acac)₂/Ar process at 220°C. The Titanium signal (Ti 2p) remains strong even after 25 cycles, showing that the TiO₂ film is largely preserved, though partial conversion of Ti–O to Ti–F occurs.\"},{\"panel_id\":\"b\",\"text\":\"The Fluorine signal (F 1s) grows progressively, indicating fluorine incorporation on the surface.\"},{\"panel_id\":\"c\",\"text\":\"The Tungsten signal (W 4f) shows significant accumulation, reflecting the formation of a tungsten oxyfluoride layer (W–O/F).\"},{\"panel_id\":\"d\",\"text\":\"The Tin signal (Sn 3d) also increases, showing the appearance of tin oxide (Sn–O) species and contributing to the formation of a mixed metal-fluoride/oxide layer (W–Sn–F–O) atop the TiO₂. The data reveals that, unlike the etching behavior seen with BCl₃, this reactant combination does not remove the TiO₂ film but instead leads to surface modification and deposition of additional species\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Counts (a.u.) | Cycles | Peak |\\n|---------------------|---------------|-----------|--------|\\n| 468 | 4800 | 0 | |\\n| 468 | 23000 | 15 | |\\n| 468 | 33000 | 25 | |\\n| 466 | 6340 | 0 | |\\n| 466 | 24000 | 15 | |\\n| 466 | 33000 | 25 | |\\n| 465 | 9870 | 0 | Ti-O |\\n| 465 | 26000 | 15 | Ti–O |\\n| 465 | 33000 | 25 | |\\n| 462 | 5300 | 0 | |\\n| 462 | 12000 | 15 | |\\n| 462 | 33000 | 25 | |\\n| 460 | 5600 | 0 | |\\n| 460 | 24000 | 15 | |\\n| 460 | 33000 | 25 | |\\n| 459 | 21000 | 0 | Ti–O |\\n| 459 | 32000| 15 | Ti–O |\\n| 459 | 33000 | 25 | |\\n| 456 | 2800 | 0 | |\\n| 456 | 22000 | 15 | |\\n| 456 | 33000 | 25 | |\\n| 454 | 3000 | 0 | |\\n| 454 | 21000 | 15 | |\\n| 454 | 33000 | 25 | |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Counts (a.u.) | Cycles | Peak |\\n|---------------------|---------------|-----------|--------|\\n| 468 | 4800 | 0 | |\\n| 468 | 23000 | 15 | |\\n| 468 | 33000 | 25 | |\\n| 466 | 6340 | 0 | |\\n| 466 | 24000 | 15 | |\\n| 466 | 33000 | 25 | |\\n| 465 | 9870 | 0 | Ti-O |\\n| 465 | 26000 | 15 | Ti–O |\\n| 465 | 33000 | 25 | |\\n| 462 | 5300 | 0 | |\\n| 462 | 12000 | 15 | |\\n| 462 | 33000 | 25 | |\\n| 460 | 5600 | 0 | |\\n| 460 | 24000 | 15 | |\\n| 460 | 33000 | 25 | |\\n| 459 | 21000 | 0 | Ti–O |\\n| 459 | 32000| 15 | Ti–O |\\n| 459 | 33000 | 25 | |\\n| 456 | 2800 | 0 | |\\n| 456 | 22000 | 15 | |\\n| 456 | 33000 | 25 | |\\n| 454 | 3000 | 0 | |\\n| 454 | 21000 | 15 | |\\n| 454 | 33000 | 25 | |\"},{\"panel_id\":\"c\",\"text\":\"| Binding Energy (eV) | Counts (a.u.) | Cycles | Peak |\\n|---------------------|---------------|-----------|--------|\\n| 42 | 465 | 0 | |\\n| 42 | 2500 | 15 | |\\n| 42 | 5000 | 25 | |\\n| 40 |620 | 0 | |\\n| 40 |2600 | 15 | |\\n| 40| 5000 | 25 | |\\n| 38 | 1500 | 0 | |\\n| 38 | 5000 | 15 | W–O |\\n| 38 | 5500 | 25 | W–O |\\n| 37 |1900 | 0 | Ti-O |\\n| 37 | 4200 | 15 | |\\n| 37 | 5300 | 25 | |\\n| 36 |850 | 0 | |\\n| 36 | 4900 | 15 | W–O |\\n| 36 | 5500 | 25 |W–O |\\n| 34 | 232 | 0 | |\\n| 34 | 2200 | 15 | |\\n| 34 | 5000 | 25 | |\\n| 32 | 192 | 0 | |\\n| 32 | 2000| 15 | |\\n| 32 | 5000 | 25 | |\\n| 30 | 192 | 0 | |\\n| 30 | 2000 | 15 | |\\n| 30 | 5000 | 25 | |\"},{\"panel_id\":\"d\",\"text\":\"| Binding Energy (eV) | Counts (a.u.) | Cycles | Peak |\\n|---------------------|---------------|-----------|--------|\\n| 500 | 8500 | 0 | |\\n| 500| 10500 | 15 | |\\n| 500| 12000 | 25 | |\\n| 495|8700 | 0 | |\\n| 495 |11200 | 15 |Sn-O |\\n| 495| 12100 | 25 | Sn-O |\\n| 490 | 8500 | 0 | |\\n| 490| 10500 | 15 | |\\n| 490 | 12000 | 25 | |\\n| 487 |9000 | 0 | |\\n| 487| 11600 | 15 |Sn-O |\\n| 487| 12200 | 25 |Sn-O |\\n| 485 |9500 | 0 | |\\n| 485 | 10700 | 15 | |\\n| 485 | 11800 | 25 | |\\n| 480 | 9000 | 0 | |\\n| 480| 10600 | 15 | |\\n| 480| 11800 | 25 | |\\n| 475 | 9200 | 0 | |\\n| 475 | 10500| 15 | |\\n| 475 | 11800 | 25 | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Near-Zero Etch Rate. The fact that the Ti–O peak intensity remains high (comparable to the starting surface) confirms that the TiO₂ film is intact. The WF₆/Sn(acac)₂ chemistry is failing to volatilize the titanium, unlike the successful WF₆/BCl₃ process.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Ti–O bond signal (Ti 2p) decreases significantly with cycles, indicating consumption of the TiO₂ network. It is replaced by Ti–F bonds (seen in the Ti 2p shift and F 1s growth) and a W–O–F layer (W 4f), confirming a fluorination and tungsten-exchange reaction.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Sn(acac)₂ cycle leaves a Sn–O residue (Sn 3d signal), indicating potential tin contamination. The BCl₃ cycle likely produces more volatile byproducts (e.g., TiCl₄), offering a cleaner etch but may require different thermodynamic drivers.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The residual tin contamination would introduce electrically active defects at the critical spacer interface, degrading transistor performance and reliability. A cleaner co-reactant like BCl₃ is preferred.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":14,"width":476,"height":368},{"panel_id":"b","x":488,"y":0,"width":461,"height":381},{"panel_id":"c","x":12,"y":393,"width":460,"height":367},{"panel_id":"d","x":486,"y":389,"width":463,"height":370}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":950,"height":761,"image_format":"jpeg","image_sha256":"5508111d8371a762159e4a4f80fa064c3cfb173a91d8ac607544a6da17d2be39","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_9_figure_1.jpg","caption":"Figure 1. (a) XRR measurements of $\\mathrm{In}_{0.53}\\mathrm{Ga}_{0.47}\\mathrm{As}$ film before and after 200 cycles of sequential HF and TMA exposures at 250 and $300^{\\circ}\\mathrm{C}$ , respectively. No etching is observed. (b) XRR measurements before and after the three-step sequence with the addition of $\\mathrm{O}_3$ oxidation before each HF/TMA or HF/DMAC sequence, at $250^{\\circ}\\mathrm{C}$ for 200 cycles each. Formation of oxides is observed in both cases, whereas etching happens only for the $\\mathrm{O}_3 / \\mathrm{HF}$ DMAC process. (c) XRR before and after the HF/DMAC process performed at $250^{\\circ}\\mathrm{C}$ for 200 and 400 cycles, without an oxidation step. The average etching rate is $0.1\\mathrm{A / cycle}$ . (d) Prepared reaction mechanism of InGaAs thermal ALE. Each cycle consists of a fluorination reaction using HF and a ligand-exchange reaction using $\\mathrm{AlCl(CH_3)_2}$ (DMAC). Volatile reaction byproducts are purged away between each step.","id":"train/atomic-layer-etching/experimental-usecase/9/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/9/figure_1","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multi spectra chart showing x-ray reflectivity measurements during the course of various ALE process steps.\"},{\"panel_id\":\"b\",\"text\":\"Multi spectra chart showing x-ray reflectivity measurements during the course of various ALE process steps.\"},{\"panel_id\":\"c\",\"text\":\"Multi spectra chart showing x-ray reflectivity measurements during the course of various ALE process steps.\"},{\"panel_id\":\"d\",\"text\":\"The InGaAs thermal ALE process is represented by the proposed ALE reaction mechanism which includes a fluorination and ligand exchange step.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Condition | Temperature | Density edge intensity |\\n|-------------|-------------|------------------------|\\n| Pristine | — | 10^8 |\\n| HF/TMA | 250°C | 10^6 |\\n| HF/TMA | 300°C |10^4 |\"},{\"panel_id\":\"b\",\"text\":\"| Condition | Peak intensity |\\n|-----------------|----------------------|\\n| Pristine | 10^8 |\\n| O₃/HF/TMA | 10^6 |\\n| O₃/HF/DMAC | 10^4 |\"},{\"panel_id\":\"c\",\"text\":\"| Condition | Peak Intensity |\\n|-----------------|----------------------|\\n| Pristine | 10^8 |\\n| ~19 Å | 10^6 |\\n|~22 Å | 10^4 |\"},{\"panel_id\":\"d\",\"text\":\"| Step | Description |\\n|------------------|----------------------------------------------|\\n| Cycle N | Start with InGaAs |\\n| HF Treatment | Removes native oxides |\\n| Fluorination | Forms InF₃ & GaF₃, releases AsH₃ |\\n| Ligand Exchange | AlCl(CH₃)₂ replaces fluorides |\\n| Cycle N+1 | Repeats process |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. After 200 cycles, The InGaAs film thickness was decreased by 19 Å \\n2. After another 200 cycles, a total of 400 cycles, an additional 22 Å thickness reduced\\n3. Average etch rate over 400 cycles ~0.1 Å/cycle.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ozone forms oxides, such as In2O3 and Ga2O3, on the InGaAs film. Fluorination of oxides such as In2O3 and Ga2O3, which form InF3 and GaF3, respectively, is more favorable than fluorination of metal arsenides such as InAs and GaAs. Therefore an oxidation step using ozone (O3) before HF/TMA favours etching.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"DMAC can provide two different ligands, CH3 and Cl, for the ligand-exchange reaction while TMA can only provide CH3 for ligand exchange reaction and is not sufficient for InGaAs ALE.\"}]}]","bbox":[{"panel_id":"c","x":772,"y":5,"width":372,"height":335},{"panel_id":"b","x":405,"y":0,"width":372,"height":344},{"panel_id":"a","x":3,"y":-3,"width":364,"height":324},{"panel_id":"d","x":12,"y":375,"width":1127,"height":381}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/In Situ Thermal Atomic Layer Etching for Sub5 nm InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1153,"height":791,"image_format":"jpeg","image_sha256":"6ac4ffeaec775a0b126494051ee5043911406d0cc5c18646b07e22d89fccfe92","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_2_fig_2.jpg","caption":"Fig. 2. The reaction of 4 $\\mathbb{F}_2$ molecules initially in the gas phase with the $\\mathrm{MoS_2}$ surface at $100\\mathrm{K}$ a) variation of the $\\Xi$ coordinate of the center of mass (CM) of $\\mathbb{F}_2$ molecule during simulation time the inset shows the initial structure with the $\\mathbb{F}_2$ molecules in the vacuum region); b) F-F distance as a function of simulation time for each of the four $\\mathbb{F}_2$ molecules; c) side view of the surface structure after $5\\mathrm{ps}$ d) total energy profile vs simulation time.","id":"train/atomic-layer-etching/simulation-usecase/2/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/2/fig_2","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"spectra chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":10,"y":62,"width":522,"height":364},{"panel_id":"b","x":590,"y":122,"width":527,"height":192},{"panel_id":"c","x":8,"y":497,"width":524,"height":366},{"panel_id":"d","x":577,"y":506,"width":531,"height":357}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/Ab-initio molecular dynamics simulations of the reactivity of MoS2 towards F2 molecules.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1117,"height":863,"image_format":"jpeg","image_sha256":"50fe1127d989881fb266b6a67532fefed9a907d2f2dd614d8c3d4237da23252f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_2_fig_5.jpg","caption":"Fig. 5. a) Total energy profiles upon increasing the temperature for simulations started with an initial configuration having 24 SF groups within the unit cell (inset). Trajectories of F atoms on the surface plane at b) $100\\mathrm{K}$ , c) $300\\mathrm{K}$ , d) $500\\mathrm{K}$ and e) $1000\\mathrm{K}$ . f) Final surface composition after 5 ps of simulation time at $1000\\mathrm{K}$ , having 10 SF groups and $7\\mathrm{SF}_2$ groups.","id":"train/atomic-layer-etching/simulation-usecase/2/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/2/fig_5","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the energy change over time at different temperatures.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the trajectory of the F atoms on the surface plane at 100 K.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the trajectory of the F atoms on the surface plane at 300 K.\"},{\"panel_id\":\"d\",\"text\":\"The figure shows the trajectory of the F atoms on the surface plane at 500 K.\"},{\"panel_id\":\"e\",\"text\":\"The figure shows the trajectory of the F atoms on the surface plane at 1000 K.\"},{\"panel_id\":\"f\",\"text\":\"The figure shows the final surface composition.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time / ps | Energy / eV |\\n|---|---|\\n| 0.0 | 2.0 |\\n| 5.0 | 0.0 |\\n| 10.0 | 5.0 |\\n| 15.0 | 8.0 |\\n| 20.0 | 15.0 |\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"How many groups are present in the unit cell?\",\"answer_type\":\"Factoid\",\"answer\":\"24 SF groups in the unit cell.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"How does the energy change over the time?\",\"answer_type\":\"Factoid\",\"answer\":\"As the simulation time increases, so does the energy of the system.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"At what temperature is the system's energy higher?\",\"answer_type\":\"Factoid\",\"answer\":\"At 1000 K.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"Why does the energy of the system decrease at 300 K?\",\"answer_type\":\"Factoid\",\"answer\":\"The decrease in energy is due to the formation of two SF2 groups.\"}]}]","bbox":[{"panel_id":"d","x":6,"y":798,"width":321,"height":281},{"panel_id":"b","x":3,"y":514,"width":324,"height":275},{"panel_id":"c","x":333,"y":508,"width":321,"height":278},{"panel_id":"e","x":336,"y":798,"width":312,"height":281},{"panel_id":"f","x":138,"y":1102,"width":384,"height":283},{"panel_id":"a","x":9,"y":46,"width":636,"height":447}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/Ab-initio molecular dynamics simulations of the reactivity of MoS2 towards F2 molecules.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":652,"height":1392,"image_format":"jpeg","image_sha256":"5e7b7f9fa8db74292a430b6a6f8920b0e432dfe90e60e74ffb5009d9d7ca9d68","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_2_fig_8.jpg","caption":"Fig. 8. a) Energy profiles for AIMD simulations performed at $500$ , $1000$ , and $1500\\mathrm{K}$ for a surface with a $125\\%$ coverage of $\\mathrm{F}$ atoms. b) Snapshots at different simulation times first showing the desorption of $\\mathrm{SF}_3$ and $\\mathrm{SF}_4$ molecules and then the desorption of $\\mathrm{MoF}_6$ at $21.903\\mathrm{ps}$ . Gas-phase molecules are removed from the top views.","id":"train/atomic-layer-etching/simulation-usecase/2/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/2/fig_8","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":48,"width":639,"height":416},{"panel_id":"b","x":10,"y":488,"width":639,"height":1167}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/2/Ab-initio molecular dynamics simulations of the reactivity of MoS2 towards F2 molecules.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":650,"height":1664,"image_format":"jpeg","image_sha256":"c186b7e689c36534b2b6150aec710f5a7edd60e90270439480beeb1015b81704","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_13.jpg","caption":"Figure 13. Mass spectrometry scans for $\\mathrm{TiF}_4^+$ , $\\mathrm{TiF}_3^+$ , $\\mathrm{TiF}_2^+$ , $\\mathrm{TiF}^+$ , and $\\mathrm{Ti}^+$ during an HF exposure lasting $2\\mathrm{min}$ . All $\\mathrm{TiF}_x^+$ species rise and fall with the HF exposure.","id":"train/atomic-layer-etching/simulation-usecase/20/figure_13","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_13","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows time-resolved mass spectrometry data for various titanium fluoride ion fragments (Ti⁺, TiF⁺, TiF₂⁺, TiF₃⁺, TiF₄⁺) during a 2-minute HF exposure on a sample at 300°C. All TiFₓ⁺ signals rise and fall synchronously with the HF pulse, confirming their origin as volatile products of the etching reaction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Mass (m/z) | Intensity (mV) | |\\n|--------|---------|---|\\n| 7 | -0.4 | TiF4+ |\\n| 7 | 4.5 | TiF2+ |\\n| 7 | 6.9 | Ti+ |\\n| 7 | 11.0 | TiF3+ |\\n| 7 | 107.4| TiF+ |\\n| 8 | 1.2 | TiF4+ |\\n| 8 | 3.2 | TiF2+ |\\n| 8 | 5.7 | Ti+ |\\n| 8 | 11.4 | TiF3+ |\\n| 8 | 106.2| TiF+ |\\n| 8.3 | 0.8 | TiF4+ |\\n| 8.3 | 5.3 | TiF2+ |\\n| 8.3 | 9.0 | Ti+ |\\n| 8.3 | 13.1 | TiF3+ |\\n| 8.3 | 158.2| TiF+ |\\n| 9 | 0.8 | TiF4+ |\\n| 9 | 21.7 | TiF2+ |\\n| 9 | 38.9 | Ti+ |\\n| 9 | 115.6| TiF3+ |\\n| 9 | 175.0| TiF+ |\\n| 10 | 0.4 | TiF4+ |\\n| 10 | 24.5 | TiF2+ |\\n| 10 | 30.3 | Ti+ |\\n| 10 | 116.8| TiF3+ |\\n| 10 | 173.8| TiF+ |\\n| 10.3 | 0.8 | TiF4+ |\\n| 10.3 | 15.1 | TiF2+ |\\n| 10.3 | 18.0 | Ti+ |\\n| 10.3 | 45.0 | TiF3+ |\\n| 10.3 | 157.0| TiF+ |\\n| 11 | 0.4 | TiF4+ |\\n| 11 | 5.7 | TiF2+ |\\n| 11 | 5.3 | Ti+ |\\n| 11 | 17.6 | TiF3+ |\\n| 11 | 108.6| TiF+ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Immediate Response / No Incubation. The TiF₃⁺ signal rises sharply almost simultaneously with the start of the HF exposure at ~8.3 minutes, indicating that the etching reaction begins immediately upon gas contact without needing an induction time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thermal HF process is fundamentally limited for anisotropic etching. It produces isotropic, spontaneous reactions and volatile products on all exposed surfaces. Ion-assisted etching directs energy vertically, allowing directional removal, which the purely chemical, isotropic thermal process cannot achieve.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This indicates the gas-phase etch products contain a mixture of titanium fluoride species (TiF, TiF₂, TiF₃, TiF₄). These fragments likely originate from the cracking of the primary volatile product, TiF₄(g), in the mass spectrometer's ionizer, showing the reaction pathway leads to fully fluorinated titanium.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This provides a direct, real-time endpoint detection method. The simultaneous rise and fall of these specific signals act as a fingerprint for the TiO₂ etching reaction, allowing tool operators to precisely monitor process start, stability, and completion to ensure consistent results.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":655,"height":484}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":661,"height":489,"image_format":"jpeg","image_sha256":"c378813578ce522d321f4c85ce358fd7fdd26e233efc6d0c46cfbc1f485294d7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_7.jpg","caption":"Figure 7. FTIR absorbance during $\\mathrm{TiO_2}$ ALD on silicon nanoparticles at $200^{\\circ}\\mathrm{C}$ versus number of ALD cycles using $\\mathrm{TiCl_4}$ and $\\mathrm{H}_2\\mathrm{O}$ as the reactants.","id":"train/atomic-layer-etching/simulation-usecase/20/figure_7","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_7","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The spectral chart represents the Infra red absorbance values ofTiO₂ at 200°C. The graph is represented with various ALE cycles . These FTIR spectra were referenced to the initial TiO ,. The wavelength range used here is 400–1400 cm⁻¹\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumbers (cm⁻¹) | Absorbance | No of cycles |\\n|--------|---------|---|\\n| 1397 | 0.00 | 6 |\\n| 1397 | 0.00 | 12 |\\n| 1397 | 0.00 | 18 |\\n| 1397 | 0.00 | 24 |\\n| 1397 | 0.00 | 30 |\\n| 1397 | 0.00 | 36 |\\n| 1278 | 0.00 | 6 |\\n| 1278 | 0.00 | 12 |\\n| 1278 | 0.00 | 18 |\\n| 1278 | 0.00 | 24 |\\n| 1278 | 0.00 | 30 |\\n| 1278 | 0.00 | 36 |\\n| 1247 | 0.01 | 6 |\\n| 1247 | 0.01 | 12 |\\n| 1247 | 0.01 | 18 |\\n| 1247 | 0.02 | 24 |\\n| 1247 | 0.02 | 30 |\\n| 1247 | 0.02 | 36 |\\n| 1208 | 0.05 | 6 |\\n| 1208 | 0.08 | 12 |\\n| 1208 | 0.10 | 18 |\\n| 1208 | 0.11 | 24 |\\n| 1208 | 0.11 | 30 |\\n| 1208 | 0.12 | 36 |\\n| 1175 | 0.02 | 6 |\\n| 1175 | 0.03 | 12 |\\n| 1175 | 0.02 | 18 |\\n| 1175 | 0.03 | 24 |\\n| 1175 | 0.03 | 30 |\\n| 1175 | 0.03 | 36 |\\n| 1099 | 0.02 | 6 |\\n| 1099 | 0.03 | 12 |\\n| 1099 | 0.04 | 18 |\\n| 1099 | 0.04 | 24 |\\n| 1099 | 0.04 | 30 |\\n| 1099 | 0.04 | 36 |\\n| 1076 | 0.05 | 6 |\\n| 1076 | 0.07 | 12 |\\n| 1076 | 0.08 | 18 |\\n| 1076 | 0.08 | 24 |\\n| 1076 | 0.08 | 30 |\\n| 1076 | 0.09 | 36 |\\n| 1046 | 0.09 | 6 |\\n| 1046 | 0.11 | 12 |\\n| 1046 | 0.12 | 18 |\\n| 1046 | 0.13 | 24 |\\n| 1046 | 0.13 | 30 |\\n| 1046 | 0.13 | 36 |\\n| 993 | 0.06 | 6 |\\n| 993 | 0.08 | 12 |\\n| 993 | 0.08 | 18 |\\n| 993 | 0.09 | 24 |\\n| 993 | 0.10 | 30 |\\n| 993 | 0.10 | 36 |\\n| 982 | 0.04 | 6 |\\n| 982 | 0.05 | 12 |\\n| 982 | 0.06 | 18 |\\n| 982 | 0.07 | 24 |\\n| 982 | 0.08 | 30 |\\n| 982 | 0.08 | 36 |\\n| 924 | 0.07 | 6 |\\n| 924 | 0.09 | 12 |\\n| 924 | 0.11 | 18 |\\n| 924 | 0.12 | 24 |\\n| 924 | 0.14 | 30 |\\n| 924 | 0.15 | 36 |\\n| 885 | 0.02 | 6 |\\n| 885 | 0.04 | 12 |\\n| 885 | 0.06 | 18 |\\n| 885 | 0.07 | 24 |\\n| 885 | 0.09 | 30 |\\n| 885 | 0.10 | 36 |\\n| 818 | 0.04 | 6 |\\n| 818 | 0.08 | 12 |\\n| 818 | 0.11 | 18 |\\n| 818 | 0.16 | 24 |\\n| 818 | 0.20 | 30 |\\n| 818 | 0.23 | 36 |\\n| 730 | 0.06 | 6 |\\n| 730 | 0.11 | 12 |\\n| 730 | 0.16 | 18 |\\n| 730 | 0.23 | 24 |\\n| 730 | 0.31 | 30 |\\n| 730 | 0.36 | 36 |\\n| 670 | 0.06 | 6 |\\n| 670 | 0.11 | 12 |\\n| 670 | 0.16 | 18 |\\n| 670 | 0.22 | 24 |\\n| 670 | 0.28 | 30 |\\n| 670 | 0.33 | 36 |\\n| 598 | 0.04 | 6 |\\n| 598 | 0.08 | 12 |\\n| 598 | 0.11 | 18 |\\n| 598 | 0.15 | 24 |\\n| 598 | 0.20 | 30 |\\n| 598 | 0.23 | 36 |\\n| 473 | 0.04 | 6 |\\n| 473 | 0.06 | 12 |\\n| 473 | 0.08 | 18 |\\n| 473 | 0.10 | 24 |\\n| 473 | 0.12 | 30 |\\n| 473 | 0.13 | 36 |\\n| 400 | 0.04 | 6 |\\n| 400 | 0.05 | 12 |\\n| 400 | 0.06 | 18 |\\n| 400 | 0.07 | 24 |\\n| 400 | 0.09 | 30 |\\n| 400 | 0.09 | 36 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The cycle is: 1) TiCl₄ pulse, 2) Purge, 3) H₂O pulse, 4) Purge. The 200°C temperature provides sufficient thermal energy for the ligand-exchange reactions while avoiding excessive precursor decomposition.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, 200°C is too high for most polymers. A lower-temperature alternative is plasma-enhanced ALD (PEALD) using an O₂ plasma, which can deposit TiO₂ below 100°C at the trade-off of potential surface damage.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Ti-O-Si peak grows with increasing cycles, confirming the formation of a chemically bonded TiO₂ film on the SiO₂/Si substrate. This indicates successful nucleation and steady, layer-by-layer film growth.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The strong interfacial bonding and layer-by-layer growth from ALD ensure a durable, adherent, and uniform TiO₂ film, making it suitable for scratch-resistant and anti-reflective optical coatings.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":3,"width":650,"height":545}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":655,"height":553,"image_format":"jpeg","image_sha256":"6128b702483d00c73bb542aeb461228009fa3247f02da780e3aa7a3cf86df81b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_8.jpg","caption":"Figure 8. FTIR difference spectrum for the first HF exposure on $\\mathrm{TiO_2}$ . Difference spectrum was obtained using the FTIR absorbance spectrum for $\\mathrm{TiO_2}$ ALD after 36 cycles as a reference. Absorbance for the $\\mathrm{TiO_2}$ ALD film after 36 cycles is also shown for comparison","id":"train/atomic-layer-etching/simulation-usecase/20/figure_8","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_8","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares the surface response from the first HF exposure (blue difference spectrum) with the bulk TiO₂ absorbance (red ALD envelope). A Ti–F stretching feature at ~750–777 cm⁻¹ in the blue curve confirms surface fluorination, while its overlap with the Ti–O/Ti–O–Ti modes in the red curve indicates similar vibrational frequencies for surface and bulk bonds.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance | |\\n|------------------|------------|--|\\n| 1245 | 0.01 | 1st HF Exposure |\\n| 1208 | 0.01 | 1st HF Exposure |\\n| 1180 | 0.04 | 1st HF Exposure |\\n| 1002 | 0.03 | 1st HF Exposure |\\n| 947 | 0.03 | 1st HF Exposure |\\n| 923 | 0.02 | 1st HF Exposure |\\n| 871 | 0.07 | 1st HF Exposure |\\n| 821 | 0.12 | 1st HF Exposure |\\n| 783 | 0.17 | 1st HF Exposure |\\n| 757 | 0.08 | 1st HF Exposure |\\n| 717 | 0.17 | 1st HF Exposure |\\n| 694 | 0.16 | 1st HF Exposure |\\n| 663 | 0.13 | 1st HF Exposure |\\n| 586 | 0.08 | 1st HF Exposure |\\n| 518 | 0.04 | 1st HF Exposure |\\n| 511 | 0.07 | 1st HF Exposure |\\n| 508 | 0.04 | 1st HF Exposure |\\n| 506 | 0.06 | 1st HF Exposure |\\n| 485 | 0.05 | 1st HF Exposure |\\n| 446 | 0.03 | 1st HF Exposure |\\n| 400 | 0.02 | TiO2 ALD Envelope |\\n| 473 | 0.06 | TiO2 ALD Envelope |\\n| 568 | 0.10 | TiO2 ALD Envelope |\\n| 647 | 0.15 | TiO2 ALD Envelope |\\n| 719 | 0.19 | TiO2 ALD Envelope |\\n| 734 | 0.19 | TiO2 ALD Envelope |\\n| 764 | 0.16 | TiO2 ALD Envelope |\\n| 824 | 0.10 | TiO2 ALD Envelope |\\n| 879 | 0.04 | TiO2 ALD Envelope |\\n| 926 | 0.04 | TiO2 ALD Envelope |\\n| 987 | 0.01 | TiO2 ALD Envelope |\\n| 1034 | 0.01 | TiO2 ALD Envelope |\\n| 1071 | 0.01 | TiO2 ALD Envelope |\\n| 1194 | 0.01 | TiO2 ALD Envelope |\\n| 1209 | 0.02 | TiO2 ALD Envelope |\\n| 1247 | 0.00 | TiO2 ALD Envelope |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Spectrum A (Sample): The TiO₂ film after the 1st HF exposure.\\n\\nSpectrum B (Reference): The pristine TiO₂ film after 36 ALD cycles (but before any HF exposure).\\n\\nThe difference spectrum is the result of subtracting the Reference from the Sample to isolate only the changes (Ti-F formation).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The self-limiting gas-phase HF exposure is necessary. A wet HF etch is aggressive, isotropic, and non-self-limiting, leading to uncontrollable bulk etching and roughness. The gas-phase process at 280°C can be tuned to saturate at a monolayer-level reaction, enabling precise surface passivation without compromising the underlying film integrity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface composition changes from titanium oxide (Ti-O) to titanium oxyfluoride or fluoride (Ti-F). This substitution significantly increases the surface's chemical stability against re-oxidation or hydrolysis, as the strong Ti-F bond is more resistant to attack by water or oxygen compared to Ti-O bonds.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the fluorinated layer can serve as a well-defined, chemically stable interface. The controlled replacement of O with F creates a dipole layer that could modulate electron injection barriers in a device, while the stability improves reliability by preventing interfacial degradation over time.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":655,"height":487}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":661,"height":494,"image_format":"jpeg","image_sha256":"c4dec75440e7c2148aacdfd3b6f8eda38ba728ad1098225452cf9d26bf1ea43c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_9.jpg","caption":"Figure 9. FTIR difference spectra after 10 sequential HF exposures at $280^{\\circ}C$ on $\\mathrm{TiO_2}$ ALD films. Absorbance feature at $777~\\mathrm{cm^{-1}}$ is assigned to $\\mathrm{Ti - F}$ stretching vibration.","id":"train/atomic-layer-etching/simulation-usecase/20/figure_9","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_9","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure displays the infrared difference spectra of a Titanium Dioxide (TiO₂) film reacting with Hydrofluoric Acid (HF) at 280 °C. The data tracks the evolution of surface chemistry over 10 sequential exposures. The key finding is the progressive growth of a negative absorbance feature (valley) at 777 cm⁻¹, which identifies as the Ti–F stretching vibration, confirming that HF is successfully fluorinating the oxide surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance | HF Exposures |\\n|------------------|------------|------|\\n| 1199 | -0.001 | 1 |\\n| 1199 | -0.004 | 2 |\\n| 1199 | -0.005 | 3 |\\n| 1199 | -0.005 | 4 |\\n| 1199 | -0.006 | 5 |\\n| 1199 | -0.006 | 6 |\\n| 1199 | -0.006 | 7 |\\n| 1199 | -0.005 | 8 |\\n| 1199 | -0.007 | 9 |\\n| 1199 | -0.006 | 10 |\\n| 928 | -0.001 | 1 |\\n| 928 | -0.005 | 2 |\\n| 928 | -0.007 | 3 |\\n| 928 | -0.007 | 4 |\\n| 928 | -0.008 | 5 |\\n| 928 | -0.012 | 6 |\\n| 928 | -0.013 | 7 |\\n| 928 | -0.013 | 8 |\\n| 928 | -0.015 | 9 |\\n| 928 | -0.016 | 10 |\\n| 877 | -0.008 | 1 |\\n| 877 | -0.012 | 2 |\\n| 877 | -0.015 | 3 |\\n| 877 | -0.017 | 4 |\\n| 877 | -0.019 | 5 |\\n| 877 | -0.023 | 6 |\\n| 877 | -0.026 | 7 |\\n| 877 | -0.026 | 8 |\\n| 877 | -0.029 | 9 |\\n| 877 | -0.031 | 10 |\\n| 830 | -0.012 | 1 |\\n| 830 | -0.022 | 2 |\\n| 830 | -0.028 | 3 |\\n| 830 | -0.033 | 4 |\\n| 830 | -0.037 | 5 |\\n| 830 | -0.046 | 6 |\\n| 830 | -0.050 | 7 |\\n| 830 | -0.050 | 8 |\\n| 830 | -0.055 | 9 |\\n| 830 | -0.059 | 10 |\\n| 795 | -0.019 | 1 |\\n| 795 | -0.032 | 2 |\\n| 795 | -0.041 | 3 |\\n| 795 | -0.048 | 4 |\\n| 795 | -0.054 | 5 |\\n| 795 | -0.064 | 6 |\\n| 795 | -0.069 | 7 |\\n| 795 | -0.073 | 8 |\\n| 795 | -0.078 | 9 |\\n| 795 | -0.083 | 10 |\\n| 781 | -0.020 | 1 |\\n| 781 | -0.034 | 2 |\\n| 781 | -0.043 | 3 |\\n| 781 | -0.050 | 4 |\\n| 781 | -0.057 | 5 |\\n| 781 | -0.066 | 6 |\\n| 781 | -0.072 | 7 |\\n| 781 | -0.076 | 8 |\\n| 781 | -0.082 | 9 |\\n| 781 | -0.088 | 10 |\\n| 766 | -0.012 | 1 |\\n| 766 | -0.027 | 2 |\\n| 766 | -0.037 | 3 |\\n| 766 | -0.044 | 4 |\\n| 766 | -0.051 | 5 |\\n| 766 | -0.060 | 6 |\\n| 766 | -0.066 | 7 |\\n| 766 | -0.070 | 8 |\\n| 766 | -0.076 | 9 |\\n| 766 | -0.081 | 10 |\\n| 756 | -0.010 | 1 |\\n| 756 | -0.024 | 2 |\\n| 756 | -0.035 | 3 |\\n| 756 | -0.042 | 4 |\\n| 756 | -0.050 | 5 |\\n| 756 | -0.060 | 6 |\\n| 756 | -0.067 | 7 |\\n| 756 | -0.070 | 8 |\\n| 756 | -0.077 | 9 |\\n| 756 | -0.082 | 10 |\\n| 733 | -0.019 | 1 |\\n| 733 | -0.034 | 2 |\\n| 733 | -0.045 | 3 |\\n| 733 | -0.052 | 4 |\\n| 733 | -0.060 | 5 |\\n| 733 | -0.070 | 6 |\\n| 733 | -0.077 | 7 |\\n| 733 | -0.081 | 8 |\\n| 733 | -0.087 | 9 |\\n| 733 | -0.093 | 10 |\\n| 716 | -0.020 | 1 |\\n| 716 | -0.036 | 2 |\\n| 716 | -0.046 | 3 |\\n| 716 | -0.053 | 4 |\\n| 716 | -0.061 | 5 |\\n| 716 | -0.071 | 6 |\\n| 716 | -0.078 | 7 |\\n| 716 | -0.080 | 8 |\\n| 716 | -0.087 | 9 |\\n| 716 | -0.092 | 10 |\\n| 660 | -0.014 | 1 |\\n| 660 | -0.028 | 2 |\\n| 660 | -0.035 | 3 |\\n| 660 | -0.039 | 4 |\\n| 660 | -0.045 | 5 |\\n| 660 | -0.052 | 6 |\\n| 660 | -0.059 | 7 |\\n| 660 | -0.061 | 8 |\\n| 660 | -0.064 | 9 |\\n| 660 | -0.069 | 10 |\\n| 608 | -0.011 | 1 |\\n| 608 | -0.020 | 2 |\\n| 608 | -0.026 | 3 |\\n| 608 | -0.029 | 4 |\\n| 608 | -0.033 | 5 |\\n| 608 | -0.037 | 6 |\\n| 608 | -0.039 | 7 |\\n| 608 | -0.041 | 8 |\\n| 608 | -0.043 | 9 |\\n| 608 | -0.044 | 10 |\\n| 561 | -0.007 | 1 |\\n| 561 | -0.015 | 2 |\\n| 561 | -0.018 | 3 |\\n| 561 | -0.019 | 4 |\\n| 561 | -0.020 | 5 |\\n| 561 | -0.023 | 6 |\\n| 561 | -0.024 | 7 |\\n| 561 | -0.025 | 8 |\\n| 561 | -0.026 | 9 |\\n| 561 | -0.026 | 10 |\\n| 499 | -0.005 | 1 |\\n| 499 | -0.013 | 2 |\\n| 499 | -0.014 | 3 |\\n| 499 | -0.015 | 4 |\\n| 499 | -0.016 | 5 |\\n| 499 | -0.019 | 6 |\\n| 499 | -0.020 | 7 |\\n| 499 | -0.017 | 8 |\\n| 499 | -0.018 | 9 |\\n| 499 | -0.017 | 10 |\\n| 399 | -0.002 | 1 |\\n| 399 | -0.011 | 2 |\\n| 399 | -0.006 | 3 |\\n| 399 | -0.007 | 4 |\\n| 399 | -0.008 | 5 |\\n| 399 | -0.007 | 6 |\\n| 399 | -0.008 | 7 |\\n| 399 | -0.007 | 8 |\\n| 399 | -0.008 | 9 |\\n| 399 | -0.001 | 10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Temperature: 280°C.\\nReactant: HF (Hydrofluoric Acid).\\nSubstrate: TiO₂ ALD films\\nThe numbers represent the cumulative count of sequential HF exposure pulses performed before that specific spectrum was captured, showing the history of the film's treatment.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thermal HF method is preferable. It offers a purely chemical, isotropic reaction that can be selective to TiO₂. Plasma CF₄, while potentially faster, generates energetic ions and radicals that would likely cause significant damage and non-selective etching of the sensitive organic underlayer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate increases with dose time then saturates. This saturation is caused by the self-limiting surface reaction; once all available surface sites are consumed by the first precursor, additional dose time cannot increase the etch yield of the subsequent complementary reaction.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The well-defined saturation plateaus guarantee a constant etch amount per cycle. By operating within these saturation windows and knowing the etch per cycle, the exact number of cycles needed to remove 2.0 nm can be calculated and executed, enabling atomic-scale precision and excellent wafer-scale uniformity.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":664,"height":495}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":669,"height":500,"image_format":"jpeg","image_sha256":"b40e9dce64076bb63148d7adc3c3c677597d286228b5c1ab4370d506766272ed","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_26_fig_3.jpg","caption":"FIG. 3. Changes in the substrate height as functions of the $\\mathsf{Ar}^+$ ion dose during the desorption steps over 6 ALE cycles, obtained from MD simulations. No Cl adsorption step is included in this figure. The dark gray (blue online) curve represents the position of the Cl-adsorbed top surface. The adsorption steps for (a) and (b) were performed under the thin Cl layer deposition conditions and those for (c) and (d) were under the \"thick Cl layer deposition\" conditions. The incident $\\mathsf{Ar}^+$ ion energy in the desorption steps for (a) and (c) is $20\\mathrm{eV}$ and that for (b) and (d) is $50\\mathrm{eV}$ . The vertical axis represents the substrate height (i.e., the position of the top surface), measured from the position of the initial (100) Si surface, denoted by the horizontal dashed line. The horizontal axis is proportional to the $\\mathsf{Ar}^+$ ion dose, whose cycle number is denoted by $C_n$ with $n = 1,\\ldots ,6$ for the $n$ th cycle. The $\\mathsf{Ar}^+$ ion dose in each cycle is $1.88\\times 10^{17} / \\mathrm{cm}^2$ . The light gray (orange online) curve represents the position of the top Si surface subject only to $\\mathsf{Ar}^+$ ion bombardment (i.e., without Cl layer adsorption steps). The dashed vertical lines delineate separate cycles.","id":"train/atomic-layer-etching/simulation-usecase/26/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/26/fig_3","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Line chart showing height changes over cycle number for thin Cl layer deposition with 20 eV Ar⁺ ion for thin Cl layer adsorption\"},{\"panel_id\":\"b\",\"text\":\"Line chart showing height changes over cycle number for thin Cl layer deposition with 50 eV Ar⁺ ion for thin Cl layer adsorption\"},{\"panel_id\":\"c\",\"text\":\"Line chart showing height changes over cycle number for thick Cl layer deposition with 20 eV Ar⁺ ion for thick Cl layer adsorption\"},{\"panel_id\":\"d\",\"text\":\"Line chart showing height changes over cycle number for thick Cl layer deposition with 50 eV Ar⁺ ion for thick Cl layer adsorption\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle Number | Height (Å) with Cl adsorption | Height (Å) with Ar⁺ ion only |\\n|-------------|--------------------------------|--------------------------------|\\n| C1 | +2 | +1 |\\n| C2 | +1 | +0.5 |\\n| C3 | -1 | -0.5 |\\n| C4 | -3 | -1 |\\n| C5 | -4.5 | -2 |\\n| C6 | -6 | -3 |\"},{\"panel_id\":\"b\",\"text\":\"| Cycle Number | Height (Å) with Cl adsorption | Height (Å) with Ar⁺ ion only |\\n|-------------|--------------------------------|--------------------------------|\\n| C1 | -10 | -5 |\\n| C2 | -20 | -10 |\\n| C3 | -30 | -15 |\\n| C4 | -40 | -20 |\\n| C5 | -50 | -25 |\\n| C6 | -60 | -30 |\"},{\"panel_id\":\"c\",\"text\":\"| Cycle Number | Height (Å) with Cl adsorption | Height (Å) with Ar⁺ ion only |\\n|-------------|--------------------------------|--------------------------------|\\n| C1 | +10 | +5 |\\n| C2 | -5 | -2 |\\n| C3 | -10 | -5 |\\n| C4 | -15 | -8 |\\n| C5 | -20 | -10 |\\n| C6 | -25 | -12 |\"},{\"panel_id\":\"d\",\"text\":\"| Cycle Number | Height (Å) with Cl adsorption | Height (Å) with Ar⁺ ion only |\\n|-------------|--------------------------------|--------------------------------|\\n| C1 | 0 | 0 |\\n| C2 | -20 | -10 |\\n| C3 | -40 | -20 |\\n| C4 | -60 | -30 |\\n| C5 | -70 | -35 |\\n| C6 | -80 | -40 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Thick Cl layer deposition \\n, 2. Thin Cl layer deposition\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the thick Cl layer deposition, it is seen that an Si–Cl mixed layer was removed in the very early stage of each desorption step and the etching became essentially due to physical sputtering for the\\nremaining period of the step.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"the etched depth in a single cycle increased initially and became nearly constant in later cycles. This\\nis because Ar+ ion bombardment in the first two cycles roughened the Si surface and created more active sites that can be bonded with Cl atoms in the subsequent adsorption cycles. This process formed a thicker Si–Cl mixed layer that can be more readily removed in the subsequent desorption step than crystalline Si. It is also seen that Ar+ ion bombardment amorphized the surface and increased the volume of the surface region, resulting in a surface higher than the initial crystalline surface.\"}]}]","bbox":[{"panel_id":"a","x":8,"y":39,"width":637,"height":502},{"panel_id":"b","x":702,"y":39,"width":643,"height":502},{"panel_id":"c","x":8,"y":605,"width":637,"height":509},{"panel_id":"d","x":702,"y":605,"width":643,"height":509}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/Surface damage formation during atomic layer etching of silicon with chlorine adsorption.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1345,"height":1114,"image_format":"jpeg","image_sha256":"9bb831cb407baa4d45d4b66082e6893122bb854174cc6a60cadf0921d0fea59d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_3.jpg","caption":"Fig. 3. RDFs calculated from AIMD simulations compared with experimental data: (a) RDF for molten $\\mathrm{Al_{48}O_{72}}$ at $5000\\mathrm{K}$ (solid black lines), averaged over 40 snapshots from the last 2 ps of the AIMD simulation, compared with the RDF obtained by neutron scattering from a liquid alumina film at $2500\\mathrm{K}$ (dashed red line) [29] and the calculated RDF for the initial expanded alpha- $\\mathrm{Al_2O_3}$ (dotted blue lines). (b) RDF for the final quenched amorphous $\\mathrm{Al_{48}O_{72}}$ structure (solid black line), compared with experimental RDFs obtained from total X-ray scattering (dashed blue line) [32] or neutron scattering (dotted red line) [33] of amorphous alumina films.","id":"train/atomic-layer-etching/simulation-usecase/29/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_3","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the radial distribution function (RDF) for molten Al48O72, molten Al2O3, and expanded alpha-Al2O3 at the distange range of 0 - 10 Å.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays the radial distribution function (RDF) for amorphous Al48O72, ALD alumina film, and anodized alumina film at the distance range of 1.0 - 3.5 Å.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Species | Distance (Å) | RDF, g(r) |\\n|---|---|---|\\n|Molten Al48O72 Model | 0 | 0 | \\n| Molten Al48O72 Model | 1.8 | 1.79 | \\n| Molten Al48O72 Model| 2.2 | 0.78 | \\n| Molten Al48O72 Model | 2.9 | 1.12 | \\n| Molten Al48O72 Model | 4.0 | 1.04 | \\n| Molten Al48O72 Model | 10 | 1.02 | \\n|Molten Al2O3 in Ref. [29] | 0 | 0 | \\n| Molten Al2O3 in Ref. [29] | 1.7 | 1.97 | \\n| Molten Al2O3 in Ref. [29]| 2.2 | 0.38 | \\n| Molten Al2O3 in Ref. [29] | 2.9 | 1.41 | \\n| Molten Al2O3 in Ref. [29] | 4.0 | 0.94 | \\n| Molten Al2O3 in Ref. [29] | 10 | 1.02 | \\n| Expanded alpha-Al2O3 | 2.1 | 5.16 |\\n| Expanded alpha-Al2O3 | 2.2 | 0.16 |\\n| Expanded alpha-Al2O3 | 2.6 | 1.67 |\\n| Expanded alpha-Al2O3 | 2.8 | 0.12 |\\n| Expanded alpha-Al2O3 | 2.9 | 2.16 |\\n| Expanded alpha-Al2O3 | 3 | 0.57 |\\n| Expanded alpha-Al2O3 | 3.3 | 2.00 |\\n| Expanded alpha-Al2O3 | 3.4 | 0.16 |\\n| Expanded alpha-Al2O3 | 3.4 | 2.78 |\\n| Expanded alpha-Al2O3 | 3.6 | 0.10 |\\n| Expanded alpha-Al2O3 | 3.8 | 1.39 |\\n| Expanded alpha-Al2O3 | 3.9 | 0.27 |\\n| Expanded alpha-Al2O3 | 4 | 3.55 |\\n| Expanded alpha-Al2O3 | 4.3 | 0.14 |\\n| Expanded alpha-Al2O3 | 4.6 | 1.22 |\\n| Expanded alpha-Al2O3 | 4.7 | 0.27 |\\n| Expanded alpha-Al2O3 | 4.9 | 3.69 |\\n| Expanded alpha-Al2O3 | 5.1 | 0.20 |\\n| Expanded alpha-Al2O3 | 5.3 | 4.51 |\\n| Expanded alpha-Al2O3 | 5.5 | 0.31 |\\n| Expanded alpha-Al2O3 | 5.6 | 1.04 |\\n| Expanded alpha-Al2O3 | 5.8 | 0.10 |\\n| Expanded alpha-Al2O3 | 5.9 | 1.20 |\\n| Expanded alpha-Al2O3 | 6.1 | 0.35 |\\n| Expanded alpha-Al2O3 | 6.3 | 1.90 |\\n| Expanded alpha-Al2O3 | 6.4 | 1.00 |\\n| Expanded alpha-Al2O3 | 6.5 | 1.57 |\\n| Expanded alpha-Al2O3 | 6.8 | 0.51 |\\n| Expanded alpha-Al2O3 | 6.9 | 1.35 |\\n| Expanded alpha-Al2O3 | 7.1 | 0.53 |\\n| Expanded alpha-Al2O3 | 7.2 | 1.53 |\\n| Expanded alpha-Al2O3 | 7.3 | 0.47 |\\n| Expanded alpha-Al2O3 | 7.5 | 1.57 |\\n| Expanded alpha-Al2O3 | 7.7 | 1.20 |\\n| Expanded alpha-Al2O3 | 7.8 | 0.63 |\\n| Expanded alpha-Al2O3 | 8 | 2.96 |\\n| Expanded alpha-Al2O3 | 8.6 | 0.55 |\\n| Expanded alpha-Al2O3 | 8.7 | 0.80 |\\n| Expanded alpha-Al2O3 | 9.1 | 2.76 |\\n| Expanded alpha-Al2O3 | 9.2 | 0.63 |\\n| Expanded alpha-Al2O3 | 9.3 | 1.61 |\\n| Expanded alpha-Al2O3 | 9.6 | 0.69 |\\n| Expanded alpha-Al2O3 | 9.9 | 1.69 |\\n| Expanded alpha-Al2O3 | 10 | 1.29 |\"},{\"panel_id\":\"b\",\"text\":\"| Species | Distance (Å) | RDF, g(r) |\\n|---|---|---|\\n| Amorphous Al48O72 | 1.6 | 0 |\\n| Amorphous Al48O72 | 1.8 | 5.1 | \\n| Amorphous Al48O72 | 2.2 | 0.3 | \\n| Amorphous Al48O72 | 2.8 | 1.5 | \\n| Amorphous Al48O72 | 3.1 | 1.0 | \\n| Amorphous Al48O72 | 3.5 | 0.9 |\\n| ALD alumina film [32] | 1.0 | 1.8 |\\n| ALD alumina film [32] | 1.5 | 0.1 |\\n| ALD alumina film [32] | 1.8 | 5.1 |\\n| ALD alumina film [32] | 2.3 | 0.4 |\\n| ALD alumina film [32] | 3.1 | 3.1 |\\n| ALD alumina film [32] | 3.5 | 1.8 |\\n| Anodized alumina film [33] | 1.2 | 0.0 |\\n| Anodized alumina film [33] | 1.3 | 0.3 |\\n| Anodized alumina film [33] | 1.5 | 0.0 |\\n| Anodized alumina film [33] | 1.8 | 5.6 |\\n| Anodized alumina film [33] | 2.8 | 3 |\\n| Anodized alumina film [33] | 3.5 | 0.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Radial distribution function of \\\"Expanded α-Al₂O₃\\\".\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"\\\"Expanded α-Al₂O₃\\\" looks the most crystalline. It shows strong, sharp peaks, which is the kind of structure you expect from an ordered solid. By contrast, the molten alumina curves have much lower peak heights and are closer to \\ng(r)≈1 at larger distances, consistent with a more disordered, liquid-like structure.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ALD alumina film (g(r) > 1).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Anodized alumina film (highest g(r)).\"}]}]","bbox":[{"panel_id":"a","x":7,"y":5,"width":685,"height":541},{"panel_id":"b","x":7,"y":567,"width":685,"height":545}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":697,"height":1108,"image_format":"jpeg","image_sha256":"7e2b1c5d5358a4049540a2075b529b2e66598400c1473ec14a013c929b7a74ce","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_11.jpg","caption":"FIG. 11. (Color online) Ion energy distribution for $\\mathrm{Cl}^+$ $\\mathrm{Cl}_2^+$ ,and $\\mathrm{Ar}^+$ in the (a) passivation and (b) ion bombardment phases. Each ion energy distribution is a probability density function for that ion, and is normalized such that integrating the function in energy results in a value of 1 regardless of the total flux of that ion.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_11","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_11","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the ion energy distribution versus energies for Cl passivation phase\"},{\"panel_id\":\"b\",\"text\":\"The chart illustrates the ion energy distribution during Ar+ ion bombardment phase\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Energy (eV) | Cl₂⁺ | Ar⁺ | Cl⁺ |\\n|-------------|------|-----|-----|\\n| 15 | 0.00 | 0.00| 0.00|\\n| 20 | 0.22 | 0.22| 0.18|\\n| 25 | 0.20 | 0.20| 0.15|\\n| 30 | 0.05 | 0.05| 0.08|\\n| 40 | 0.00 | 0.00| 0.02|\\n| 60 | 0.00 | 0.00| 0.00|\"},{\"panel_id\":\"b\",\"text\":\"| Energy (eV) | Cl₂⁺ | Ar⁺ | Cl⁺ |\\n|-------------|------|-----|-----|\\n| 20 | 0.00 | 0.00| 0.00|\\n| 30 | 0.03 | 0.02| 0.02|\\n| 40 | 0.06 | 0.04| 0.03|\\n| 50 | 0.05 | 0.03| 0.02|\\n| 60 | 0.02 | 0.02| 0.01|\\n| 80 | 0.00 | 0.00| 0.00|\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The resulting fluxes to the wafer are\\n1. 7.8*10^14 /cm2 s for Cl\\n2. 3.9*10^12 /cm2 s for Cl2+\\n3. 9.2*10^13 /cm2 s for Cl+\\n4. 2.3*10^16 /cm2 s for Ar+,\\n with ion energies distributed from 33 eV to 60 eV,\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Each ion energy distribution is a probability density function for that ion, and is normalized such that integrating the function in energy results in a value of 1 regardless of the total flux of that ion.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the ion bombardment phase Ar gas with 100 ppm Cl2 was used to simulate chlorine contamination of the process due to incomplete purging, etch products or desorption from the walls. The total gas flow was 200 sccm at a pressure of 20 mTorr.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A bias of 30V at 10MHz was applied to the wafer, resulting in a DC bias of 8.4V and a plasma potential oscillating between 35V and 49 V.\"}]}]","bbox":[{"panel_id":"b","x":0,"y":459,"width":577,"height":412},{"panel_id":"a","x":2,"y":0,"width":572,"height":419}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":578,"height":872,"image_format":"jpeg","image_sha256":"958c9ee09d2df1d27ce2f826c108b27e7b428c12c5b1ec225c3916f9f1367b30","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_5.jpg","caption":"Fig. 5. (Color online) Surface roughness as a function of time. (a) First 25 pulses for $\\Gamma_{i} / \\Gamma_{n} = 0.01$ , $10^{-3}$ , and $10^{-4}$ in the passivation step, showing the transient roughening at early etch times. (b) Subcycle roughening behavior at steady-state (55th pulse) for $\\Gamma_{i} / \\Gamma_{n} = 0.01$ in the passivation phase and $100\\mathrm{ppmCl}_{2}$ in the ion bombardment phase. ALE subcycles are listed at the top, with the passivation phase highlighted with gray in the figure.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_5","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the roughness of a surface over time, for different ratios of Γi/Γn.\"},{\"panel_id\":\"b\",\"text\":\"The chart displays the roughness changes over time during specific intervals of CI and Ar+.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Roughness (Γᵢ/Γₙ = 0.01) | Roughness (Γᵢ/Γₙ = 10⁻³) | Roughness (Γᵢ/Γₙ = 10⁻⁴) |\\n|----------|---------------------------|---------------------------|---------------------------|\\n| 0 | 0.5 | 0.5 | 0.5 |\\n| 10 | 1.8 | 1.3 | 0.9 |\\n| 30 | 2.0 | 1.4 | 1.0 |\\n| 60 | 2.0 | 1.4 | 1.0 |\\n| 90 | 2.0 | 1.4 | 1.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Roughness (Γᵢ/Γₙ = 0.01) | Roughness (100 ppm Cl₂) |\\n|----------|---------------------------|---------------------------|\\n| 191 | 1.4 | 1.2 |\\n| 192 | 2.0 | 1.4 |\\n| 193 | 2.1 | 1.5 |\\n| 195 | 1.4 | 1.3 |\\n| 196 | 2.0 | 1.4 |\\n| 198 | 2.1 | 1.5 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The roughening during steady state is similar when compared on the basis of the fluence of ions during the passivation phase. This similarity\\nsuggests that each ion impinging on the etch front during the passivation phase is responsible for some stochastic roughening of the surface. This trend was also recently observed experimentally for very low ion to neutral flux ratios generated in pulsed Cl2 plasmas\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Subcycle roughening behavior at steady-state (55th pulse) for Γᵢ/Γₙ =0.01 in the passivation phase and 100 ppm Cl2 in the ion bombardment phase help understand the roughening behavior during steady sttate\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The cycle averaged steady state roughness are\\n1. 1.8 for Γᵢ/Γₙ =0.02\\n2. 1.6 for Γᵢ/Γₙ= 0.01\\n3. 1.4 for Γᵢ/Γₙ = 10^-3\\n4. 0.9 for Γᵢ/Γₙ = 10^-4\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":567,"height":444},{"panel_id":"b","x":4,"y":467,"width":560,"height":462}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":570,"height":933,"image_format":"jpeg","image_sha256":"d739b78389164aa9994564cc9366e8186b3302ae3fea99406efdd54b4a19cca4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_10.jpg","caption":"FIG. 10. OES signals for atomic Si (bottom line), SiCl (top line), and $\\mathrm{SiCl_2}$ (middle line) for $80\\mathrm{eVAr^{+}}$ Results are shown for two ALE cycles. The signal for SiCl is multiplied by 10 and the signal for $\\mathrm{SiCl_2}$ is multiplied by 100. The atomic Si signal is modified to account for dissociative excitation of SiCl.","id":"train/atomic-layer-etching/simulation-usecase/6/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_10","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a multiple line chart showing the temporal evolution of product counts for Si, SiCl, and SiCl₂ during a repeated four-step process. Product counts peak during specific steps and return to baseline in others, demonstrating step-dependent product formation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Product Count (arb. units) |\\n|---|---|\\n| 0 | 0 |\\n| 5 | 0 |\\n| 10 | 0 |\\n| 15 | 0 |\\n| 20 | 0 |\\n| 25 | 0 |\\n| 30 | 0 |\\n| 35 | 0 |\\n| 40 | 0 |\\n| 45 | 0 |\\n| 50 | 0 |\\n| 55 | 0 |\\n| 60 | 0 |\\n| 65 | 0 |\\n| 70 | 0 |\\n| 75 | 0 |\\n| 80 | 0 |\\n| 85 | 0 |\\n| 90 | 0 |\\n| 95 | 0 |\\n| 100 | 0 |\\n| 105 | 0 |\\n| 110 | 0 |\\n| 115 | 0 |\\n| 120 | 0 |\\n| 125 | 0 |\\n| 130 | 0 |\\n| 135 | 0 |\\n| 140 | 0 |\\n| 145 | 0 |\\n| 150 | 0 |\\n| 155 | 0 |\\n| 160 | 0 |\\n| 165 | 0 |\\n| 170 | 0 |\\n| 175 | 0 |\\n| 180 | 0 |\\n| 185 | 0 |\\n| 190 | 0 |\\n| 195 | 0 |\\n| 200 | 0 |\\n| 205 | 0 |\\n| 210 | 0 |\\n| 215 | 0 |\\n| 220 | 0 |\\n| 225 | 0 |\\n| 230 | 0 |\\n| 235 | 0 |\\n| 240 | 0 |\\n| 245 | 0 |\\n| 250 | 0 |\\n| 255 | 0 |\\n| 260 | 0 |\\n| 265 | 0 |\\n| 270 | 0 |\\n| 275 | 0 |\\n| 280 | 0 |\\n| 285 | 0 |\\n| 290 | 0 |\\n| 295 | 0 |\\n| 300 | 0 |\\n| 305 | 0 |\\n| 310 | 0 |\\n| 315 | 0 |\\n| 320 | 0 |\\n| 325 | 0 |\\n| 330 | 0 |\\n| 335 | 0 |\\n| 340 | 0 |\\n| 345 | 0 |\\n| 350 | 0 |\\n| 355 | 0 |\\n| 360 | 0 |\\n| 365 | 0 |\\n| 370 | 0 |\\n| 375 | 0 |\\n| 380 | 0 |\\n| 385 | 0 |\\n| 390 | 0 |\\n| 395 | 0 |\\n| 400 | 0 |\\n| 405 | 0 |\\n| 410 | 0 |\\n| 415 | 0 |\\n| 420 | 0 |\\n| 425 | 0 |\\n| 430 | 0 |\\n| 435 | 0 |\\n| 440 | 0 |\\n| 445 | 0 |\\n| 450 | 0 |\\n| 455 | 0 |\\n| 460 | 0 |\\n| 465 | 0 |\\n| 470 | 0 |\\n| 475 | 0 |\\n| 480 | 0 |\\n| 485 | 0 |\\n| 490 | 0 |\\n| 495 | 0 |\\n| 50 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The graph shows a clear cyclic pattern in product count behavior across Steps 1 through 4. During Step 1, all product species Si, SiCl, and SiCl₂ exhibit a sharp increase in signal intensity, indicating a burst of reaction or desorption activity. In Step 2, there is a rapid drop in product count, suggesting quenching of the reaction or a purge phase. Steps 3 and 4 show more stable or gradually shifting product levels, with some fluctuations depending on the species. This four-step cycle repeats consistently, indicating a highly reproducible process sequence likely tied to a pulsed or stepwise etching or deposition protocol.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The process is highly reproducible and each step elicits consistent chemical behaviour, indicating well-controlled plasma/surface interactions.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"To show how the product counts of Si, SiCl, and SiCl₂ evolve during different steps of a cyclic process, indicating their formation and depletion dynamics across time.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"All three species begin to rise sharply, with SiCl₂ showing the highest peak, indicating it is the dominant product during the initial stage.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":678,"height":470}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":678,"height":470,"image_format":"jpeg","image_sha256":"ff555e757297a5f7a65a4322ccab7d539b90098348a220a5304b75ac1b3c5a6d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_11.jpg","caption":"FIG. 11. Si OES modified to account for dissociative excitation of SiCl as a function of time for various $\\mathrm{Ar^{+}}$ energies. Results are shown for two ALE cycles. The top line corresponds to results for $215\\mathrm{eV}$ , the middle line for $80\\mathrm{eV}$ , and the bottom line for $45\\mathrm{eV}$ .","id":"train/atomic-layer-etching/simulation-usecase/6/fig_11","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_11","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a multi-line plot showing product count (in arbitrary units) over time for three different incident electron energies: 45 eV, 80 eV, and 215 eV. Each energy condition produces a distinct response pattern across four repeated steps, with the 215 eV trace showing the highest product count. The signal rises sharply at the beginning of each active phase and drops immediately at the end of each step, highlighting a rapid and reversible product formation tied to process cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | 45 eV | 80 eV | 215 eV |\\n|----------|--------|--------|---------|\\n| 0 | 0 | 0 | 0 |\\n| 1 | ~20k | ~60k | ~180k |\\n| 2 | ~20k | ~60k | ~180k |\\n| 5 | ~20k | ~60k | ~180k |\\n| 6 | 0 | 0 | 0 |\\n| 7 | ~20k | ~60k | ~180k |\\n| 10 | ~20k | ~60k | ~180k |\\n| 12 | 0 | 0 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"215eV\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Signal onset, Signal plateau, Signal drop, Cycle repeat\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure demonstrates that higher electron energies lead to significantly greater product formation, suggesting that tuning energy input can directly enhance process efficiency. For systems like ALD or plasma etching, optimising electron energy could allow for precise control over reaction rates and product yields. Moreover, the sharp responsiveness of the signal to energy application indicates potential for real-time modulation during pulsed processes, improving throughput and selectivity.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":458}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":669,"height":458,"image_format":"jpeg","image_sha256":"5e3fe148fedff6a7474d21988874212967d9cb4b8f0470595f99408820f64589","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_9.jpg","caption":"FIG. 9. OES signals for atomic Si (middle line), SiCl (top line), and $\\mathrm{SiCl_2}$ (bottom line) for $80\\mathrm{eVAr^{+}}$ Results are shown for two ALE cycles. The relative intensities of the emission intensity have been adjusted for clarity and do not correspond to densities, in general. The signal for SiCl is multiplied by 10 and the signal for $\\mathrm{SiCl_2}$ is multiplied by 100. The steps shown correspond to Fig. 2.","id":"train/atomic-layer-etching/simulation-usecase/6/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_9","subset":"multi-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This line chart displays time-resolved product formation for three species ,Si, SiCl, and SiCl₂, during repeated etching cycles, each consisting of four steps. The signal intensities sharply increase during Step 1 (etchant exposure) and then decay across subsequent steps. SiCl₂ consistently shows the highest intensity, followed by SiCl and then Si, indicating that higher chlorinated etch products dominate during active etching. The periodic recurrence and relative ordering of product counts suggest a reproducible reaction mechanism governed by sequential Cl₂ plasma and ion bombardment steps. The figure captures the cyclic and self-limiting nature of the etching process under controlled ALD/E conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Si (arb. units) | SiCl (arb. units) | SiCl₂ (arb. units) |\\n|----------|------------------|-------------------|---------------------|\\n| 0 | 0 | 0 | 0 |\\n| 1 | 150000 | 200000 | 250000 |\\n| 2 | 100000 | 150000 | 200000 |\\n| 3 | 60000 | 120000 | 180000 |\\n| 4 | 50000 | 100000 | 160000 |\\n| 5 | 0 | 0 | 0 |\\n| 6 | 140000 | 190000 | 240000 |\\n| 7 | 100000 | 150000 | 200000 |\\n| 8 | 60000 | 120000 | 180000 |\\n| 9 | 50000 | 100000 | 160000 |\\n| 10 | 0 | 0 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Across both etching cycles, SiCl₂ exhibits the highest product count, followed by SiCl and then Si, suggesting a dominant formation of more heavily chlorinated etch products. The counts peak rapidly during the early phase of each cycle and then decay, likely corresponding to surface saturation and depletion events. This trend repeats consistently, confirming that each cycle produces a reproducible chemical response in the etch process.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiCl₂\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Cl₂ exposure, Pump and purge, Ar⁺ bombardment, Final purge\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":466}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":675,"height":466,"image_format":"jpeg","image_sha256":"8765a21dcef053adec604ef60412bf79112b8cb2ab82587fae45597a3d5fbefd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/multi-spectra-chart/validation/metadata.jsonl b/subsets/multi-spectra-chart/validation/metadata.jsonl index 6802e54c6f132c228cc593fc25fdf5d118635c5e..6f22218aecf80304b8b692994b02edd5486d8ab2 100644 --- a/subsets/multi-spectra-chart/validation/metadata.jsonl +++ b/subsets/multi-spectra-chart/validation/metadata.jsonl @@ -1,6 +1,6 @@ -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_11_fig_8.jpg","caption":"Fig. 8. Auger depth profile of the nanolaminate film stack $(9 \\times (\\mathrm{WN}_{\\mathrm{x}} \\mathrm{C}_{\\mathrm{y}} (2 \\mathrm{~nm}) + \\mathrm{TiN} (2 \\mathrm{~nm}))$ .","id":"validation/atomic-layer-deposition/experimental-usecase/11/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/11/fig_8","subset":"multi-spectra-chart","split":"validation","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/K.-E. Elers et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":658,"height":619,"image_format":"jpeg","image_sha256":"a5b7c42f58ad8e2691fefdcfb70c7a8f94737e1fa95c6999413edca27591a9b4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":658,"height":619}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot shows atomic concentrations of W, C, N, Ti, O, F and Si as a function of sputter time through the 9×(WNₓCᵧ (2 nm) + TiN (2 nm)) nanolaminate. W and C are high and oscillatory (peaks at the WNₓCᵧ layers), Ti and N show complementary oscillations (peaks at the TiN layers), and the periodic waveform confirms the multilayer architecture is preserved. Fluorine is essentially negligible, oxygen is low in the bulk but rises at the surface (air exposure), and silicon sharply increases at the end when the substrate is reached — together indicating well-defined interfaces, low contamination, and minimal interdiffusion.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sputter Time (min)|W (%)|C (%)|N (%)|Ti (%)|O (%)|F (%)|Si (%)|\\n|-------------------|-----|-----|-----|------|-----|-----|------|\\n|0|~10|~15|~8|~5|~2|~0.5|~0|\\n|5|~48|~30|~10|~6|~1|~0.3|~0|\\n|10|~52|~32|~11|~7|~1|~0.3|~0|\\n|15|~50|~30|~10|~6|~1|~0.2|~0|\\n|20|~45|~25|~9|~5|~1|~0.2|~0|\\n|25|~2|~5|~3|~1|~10–50 rising|~0.2|sharply rising|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The repeating elemental peaks confirm that the alternating WNₓCᵧ and TiN layers remain well-defined throughout the depth of the film. Such structural periodicity creates numerous interfaces that disrupt continuous diffusion pathways, making it more difficult for copper or other species to penetrate the barrier. The low fluorine content and minimal intermixing further enhance chemical stability, leading to reliable performance in semiconductor interconnect applications.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"W and Ti show repeated peaks and valleys corresponding to the nanolaminate layering, while O and Si remain low until the surface or substrate is reached, where they rise sharply.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the periodic oscillations in W, C, N, and Ti concentrations clearly confirm the alternating multilayer structure.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Very low fluorine levels throughout the stack, Stable, repeating concentration oscillations, Sharp rise of Si only at the substrate interface, Low oxygen in the bulk with expected surface oxidation\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_58_fig_2.jpg","caption":"FIG. 2. XPS spectrum of PE-ALD Co for silicon core-level region after selective etching of Co film.","id":"validation/atomic-layer-deposition/experimental-usecase/58/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/58/fig_2","subset":"multi-spectra-chart","split":"validation","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/Lee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":602,"height":470,"image_format":"jpeg","image_sha256":"8895b2fcb15f599106b32e838dac14622e94290a91150375d36cda7f3f0f808e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":600,"height":466}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a Si core level spectrum for PE-ALD Co/Si(001) with raw data, deconvoluted components, and peak sum.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Intensity (a.u.) |\\n|---|---|\\n| 94 | 0 |\\n| 96 | 0 |\\n| 98 | 0.5 |\\n|99|1|\\n| 100 | 0.4 |\\n| 102 | 0.4 |\\n| 104 | 0 |\\n| 106 | 0 |\\n| 108 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No this is not the case, as the pure silicon peal is just the sharp peak and not the shoulder.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The shoulder extends from 104 to 100 eV, this is usually a range in which there is also SiO2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that you are overfitting the data resulting in contributions of composition that are not accurate.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_13_fig10.jpg","caption":"Fig.10 (a) XPS C 1s spectrum of pristine and graphene treated with 5 min $\\Omega_2$ plasma; (b-f) SEM images showing the Pt coverage after 500 ALD cycles using $\\mathrm{MeCpPtMe}_3$ as the Pt precursor on (b) pristine graphene and graphene treated with (c) 1 min, (d) 2 min, (e) 3 min and (f) 5 min $\\Omega_2$ plasma.","id":"validation/atomic-layer-deposition/simulation-usecase/13/fig10","sample_id":"atomic-layer-deposition/simulation-usecase/13/fig10","subset":"multi-spectra-chart","split":"validation","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/Bora Karasulu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1108,"height":541,"image_format":"jpeg","image_sha256":"652c94cf0c11785a58d6dd234b64d9653960db31499bfb0b6d3f96a1117304df","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":371,"height":282},{"panel_id":"b","x":379,"y":4,"width":355,"height":266},{"panel_id":"c","x":746,"y":5,"width":359,"height":265},{"panel_id":"d","x":4,"y":286,"width":355,"height":254},{"panel_id":"e","x":377,"y":288,"width":353,"height":254},{"panel_id":"f","x":751,"y":285,"width":353,"height":255}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS C 1s spectra comparing pristine graphene and graphene exposed to 5 min O₂ plasma, showing formation of C–O and C=O bonds and partial conversion of sp² carbon to sp³.\"},{\"panel_id\":\"b\",\"text\":\"SEM image of Pt deposition after 500 ALD cycles on pristine graphene (0 min O₂ plasma), showing limited nucleation and sparse Pt coverage.\"},{\"panel_id\":\"c\",\"text\":\"SEM image of Pt deposition after 500 ALD cycles on graphene treated with 1 min O₂ plasma, showing increased Pt nucleation and partial coverage.\"},{\"panel_id\":\"d\",\"text\":\"SEM image of Pt deposition after 500 ALD cycles on graphene treated with 2 min O₂ plasma, showing further enhancement of Pt coverage.\"},{\"panel_id\":\"e\",\"text\":\"SEM image of Pt deposition after 500 ALD cycles on graphene treated with 3 min O₂ plasma, showing near-continuous Pt domains forming.\"},{\"panel_id\":\"f\",\"text\":\"SEM image of Pt deposition after 500 ALD cycles on graphene treated with 5 min O₂ plasma, showing a nearly continuous Pt layer with uniform coverage across the graphene surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | sp² | C–O | C=O | Plasmon 1 | Plasmon 2 | Sample |\\n|---|---|---|---|---|---|---|\\n| 284.4 | Major | Minor | 0 | 0 | 0 | Pristine graphene |\\n| 286.4 | 0 | Minor | 0 | 0 | 0 | Pristine graphene |\\n| 290.4 | 0 | 0 | 0 | Minor | 0 | Pristine graphene |\\n| 293.2 | 0 | 0 | 0 | 0 | Minor | Pristine graphene |\\n| 284.6 | Minor | Minor | 0 | 0 | 0 | 5 min O₂ plasma graphene |\\n| 286.4 | 0 | Minor | 0 | 0 | 0 | 5 min O₂ plasma graphene |\\n| 289.0 | 0 | 0 | Minor | 0 | 0 | 5 min O₂ plasma graphene |\"},{\"panel_id\":\"b\",\"text\":\"| Sample | Pristine | 1 min O₂ Plasma |\\n|---|---|---|\\n| SEM Image | image_path | image_path |\"},{\"panel_id\":\"c\",\"text\":\"| Sample | 2 min O₂ Plasma |\\n|---|---|\\n| SEM Image | image_path |\"},{\"panel_id\":\"d\",\"text\":\"| Sample | 3 min O₂ Plasma |\\n|---|---|\\n| SEM Image | image_path |\"},{\"panel_id\":\"e\",\"text\":\"| Sample | 5 min O₂ Plasma |\\n|---|---|\\n| SEM Image | image_path |\"},{\"panel_id\":\"f\",\"text\":\"| Sample | 1000 ALD cycles on 5 min O₂ Plasma |\\n|---|---|\\n| SEM Image | image_path |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. O₂ plasma functionalizes the graphene surface, creating C–O and C=O groups that promote Pt nucleation and increase coverage during ALD.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SEM images show that Pt coverage progressively increases with longer O₂ plasma exposure. After 1 minute, small Pt particles are sparsely distributed. With 2–3 minutes, coverage becomes more uniform, and after 5 minutes, the Pt forms an almost continuous layer, indicating that longer plasma treatment enhances surface functionalization and facilitates nucleation.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Introduces oxygen-containing functional groups (C–O, C=O) that enhance precursor adsorption, Increases surface reactivity and Pt coverage, Facilitates formation of a nearly continuous Pt layer after sufficient plasma exposure, Reduces the dependence on defect sites alone for Pt nucleation, improving uniformity\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Partial conversion of sp² to sp³ carbon, formation of C–O (286.4 eV) and C=O (289.0 eV) bonds, and the appearance of plasmon features at 290.4 eV and 293.2 eV.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_10.jpg","caption":"Figure 10. Infrared absorbance showing the loss of $\\mathrm{Al - O}$ stretching vibration in bulk $\\mathrm{Al}_2\\mathrm{O}_3$ versus number of $\\mathrm{Al}_2\\mathrm{O}_3$ ALE cycles at $300^{\\circ}\\mathrm{C}$ . These FTIR spectra were referenced to the initial $\\mathrm{ZrO}_2$ nanoparticles.","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_10","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_10","subset":"multi-spectra-chart","split":"validation","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":664,"height":619,"image_format":"jpeg","image_sha256":"cc176a3f88b42586cf2564d95daeda8a1b2b04caf52cc15862a44378cf800f06","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":664,"height":619}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This in situ FTIR spectroscopy measurement shows the progressive loss of infrared absorbance from Al–O stretching vibrations (800–1000 cm⁻¹) during Al₂O₃ ALE at 300°C. The spectra are referenced to the initial ZrO₂ nanoparticle substrate. As the number of ALE cycles increases from 0 to 4, 6, and 8, the absorbance peak centered around 900 cm⁻¹ systematically decreases in intensity, directly confirming the removal of Al₂O₃ material. The Al₂O₃ film was initially grown using 15 cycles of Al₂O₃ ALD with TMA and H₂O at 150°C, then etched using sequential TMA and HF exposures at 300°C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance (0 cycles) | Absorbance (4 cycles) | Absorbance (6 cycles) | Absorbance (8 cycles) |\\n|---|---:|---:|---:|---:|\\n| 1300 | ~0.06 | ~0.05 | ~0.04 | ~0.03 |\\n| 1100 | ~0.06 | ~0.05 | ~0.04 | ~0.03 |\\n| 940 | ~0.59 | ~0.56 | ~0.50 | ~0.40 |\\n| 900 | ~0.53 | ~0.52 | ~0.42 | ~0.38 |\\n| 800 | ~0.00 | ~0.00 | ~0.00 | ~0.00 |\\n| 700 | ~0.00 | ~0.00 | ~0.00 | ~0.00 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The absorbance intensity is studied as a function of the number of cycles of etching applied to the Al2O3 films.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch rate is higher with 8 cycles, which is why the spectra show the lowest absorbance intensity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of cycles increases, the absorbance peak of Al2O3 decreases slightly and shifts towards higher wavenumber values.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The trend in absorbance is non-linear. This does not mean that the etching is non-linear, to conclude this, the integrated absorbance of the full peak must be considered.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Al-F is a bond with permanent dipole so it will vibrate upon IR absorption.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For thicker films, generally broader peaks are observed, by decreasing the film thickness with the etch process, the peak gets more narrow.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No the composition does not change based on the given data, as the peak shape remains constant.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Al–O stretching peak in the ~900–1000 cm⁻¹ region systematically decreases as the ALE cycle count increases from 0 to 8. Because FTIR absorbance is proportional to the amount of the corresponding bonding environment, this monotonic decrease indicates a reduction in Al–O content. This directly implies progressive thinning or removal of the Al₂O₃ film during the ALE process.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"- Acquire a reference spectrum (here: referenced to the initial ZrO2 nanoparticles) before ALE begins.\\n- Record spectra after defined numbers of ALE cycles (e.g., 0, 4, 6, 8).\\n- Identify the Al2O3/Al–O stretching region (here centered around ~900–1000 cm⁻¹).\\n- Compare peak height/area across cycles to check for a monotonic decrease.\\n- Confirm that the baseline regions (outside the Al–O band) remain relatively stable to rule out simple scaling artifacts.\\n- Interpret the decreasing Al–O band intensity as reduced Al–O content consistent with material removal.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Al–O stretching vibration in bulk Al2O3.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Al–O band intensity provides a chemically specific indicator of the remaining Al₂O₃ material. An ALE endpoint could be defined when the Al–O absorbance falls below a predetermined threshold or approaches the baseline. Monitoring the rate of absorbance decrease per cycle can also reveal changes in etch efficiency, enabling real-time adjustment of exposure or cycle count to achieve consistent material removal.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ZrO₂ nanoparticles were chosen as the substrate because they provide a high surface area that enhances the FTIR signal from the deposited Al₂O₃ film and subsequent surface reactions. Critically, ZrO₂ absorbs infrared radiation only between approximately 400–800 cm⁻¹, leaving an open spectral window above 800 cm⁻¹ where the Al–O stretching vibrations of Al₂O₃ can be monitored without interference. This allows clear observation of the Al₂O₃ absorbance changes during the ALE process. The nanoparticles were pressed into a tungsten grid that could be resistively heated for temperature control.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The absorbance between 800 and 1000 cm⁻¹ progressively decreases with increasing ALE cycles, confirming the removal of Al₂O₃ material.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The broad absorbance peak between 800 and 1000 cm⁻¹ corresponds to Al–O stretching vibrations in the bulk Al₂O₃ film. The intensity of infrared absorbance is directly proportional to the amount of the absorbing species present, following Beer-Lambert principles. As the Al₂O₃ film is etched away through the sequential TMA and HF reactions, there are fewer Al–O bonds available to absorb infrared radiation at these frequencies. The progressive decrease in peak intensity from 0 to 8 ALE cycles therefore provides direct spectroscopic evidence that the Al₂O₃ material is being removed from the substrate.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. While QCM measures mass changes, FTIR provides chemical-specific information by tracking the loss of Al–O bonds and can also identify surface intermediates such as AlF* and AlCH₃* species formed after HF and TMA exposures, respectively.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1) Expose the Al₂O₃ surface to a fluorinating reactant (e.g., HF).\\n\\n2) Purge with inert gas to remove excess reactant and byproducts.\\n\\n3) Expose to a second reactant (e.g., TMA) to form volatile species.\\n\\n4) Purge again to clear the chamber.\\nReferencing to the initial ZrO₂ nanoparticles subtracts the strong infrared absorption background of the substrate, isolating the signal from the Al₂O₃ film and allowing accurate measurement of the Al–O bond removal.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ALE is superior for 3D nanostructures because it offers anisotropic, self-limiting etching with perfect conformality. Wet etching is isotropic and difficult to control at the nanometer scale. The trade-off is that ALE is significantly slower and requires more complex equipment than a simple wet etch.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Al–O bond concentration decreases linearly with each ALE cycle, as shown by the diminishing peak absorbance. This occurs because each cycle converts a self-limiting layer of surface Al₂O₃ into volatile aluminum fluoride and aluminum methyl species, which are purged away, systematically etching the film.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies that ALE can precisely tune the gate dielectric thickness with atomic-scale accuracy. Such control is essential for setting the exact threshold voltage and leakage current in scaled transistors, enabling performance optimization and device matching across a wafer.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It describes the number of ALE cycles and how the FTIR spectra changes after 4 ALE cycles, 6 ALE cycles and 8 ALE cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Al-O stretching is observed between 800 cm-1 and 1000 cm−1\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"the sample temperature was raised to 300 °C, and the Al2O3 film was etched using sequential exposures of TMA and HF. FTIR spectra recorded during the TMA and HF exposures at 300 °C. The progressive loss in absorbance between 800 and 1000 cm−1 with ALE cycles is in agreement with the etching of the Al2O3 film.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. These FTIR spectra were referenced to the initial ZrO2 nanoparticles\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Al-O peak decreases as the cycle count increases from 0 to 8. This indicates that the amount of material contributing to that vibration is decreasing with each cycle. Overall, the spectra are consistent with progressive etching of the Al₂O₃ layer during ALE.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Systematic shift in peak position (from about 930 to ~921 cm⁻¹).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Peak shape\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It decreases more slowly at the beginning.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"0,4,6, 8.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The peak near 1000 cm^-1 steadily decreases in height with increasing ALE cycles. The 0-cycle spectrum shows the strongest feature, and each followingspectrum is progressively lower. This indicates that repeated ALE steps remove or change the surface species responsible for this absorption.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The absorbance progressively decreases with increasing ALE cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Al–O stretching vibrations in bulk Al₂O₃, Surface hydroxyl (Al–OH) groups, indicating surface reactions during ALE\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The progressive loss of Al–O absorbance indicates effective etching of the Al₂O₃ film during ALE cycles. This confirms that the sequential TMA and HF exposures at 300 °C can selectively remove Al₂O₃ layers on ZrO₂ nanoparticles, which is critical for controlled layer-by-layer modification in atomic layer etching applications.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_11.jpg","caption":"Figure 11 displays the FTIR difference spectra at 800-1300 $\\mathrm{cm}^{-1}$ after consecutive TMA and HF exposures during the fifth","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_11","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_11","subset":"multi-spectra-chart","split":"validation","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_11.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":666,"height":608,"image_format":"jpeg","image_sha256":"3b8d2c3e7e53c19a54c0c681768b6929dcf23dbc35c6f9129914d3fc56c7d670","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":666,"height":608}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The FTIR spectra compare TMA and HF exposures on Al2O3 at 300 °C. The TMA trace shows a strong positive peak near 1230 cm^-1 associated with CH3 deformation, while the HF trace shows a negative feature at the same position. HF also produces additional negative bands in the 1100–900 cm^-1 region that are linked to AlF3 formation but the TMA spectrum remains close to baseline in this range.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance | Condition |\\n| ----------------- | ---------- | --------- |\\n| ~1230 | ~+0.065 | TMA |\\n| ~1230 | ~-0.055 | HF |\\n| ~1100 | ~+0.010 | TMA |\\n| ~1100 | ~-0.015 | HF |\\n| ~950 | ~+0.005 | TMA |\\n| ~950 | ~-0.020 | HF |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"During the cycles, TMA provides the film with CH3 groups but removes AlF3 from the surface, in accordance with the negative value between 800 and 950 cm⁻¹. Also, after exposure to HF, it is possible to observe, the an increased peak in AlF3 band, due to the formation of AlF3.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, in this case, the TMA provides the film with CH3 groups based on the positive absorbance peaks.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The HF exposure produces the surface etching, resulting in the desorption of CH3 groups and the provision of AlF3 to the surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A positive peak means that bonds with corresponding vibrations are added to the surface, whereas a negative peak indicates the removal of bonds from the surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes, the positive and negative CH3 absorption peak are equaly big.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If AlF3 is added, this would result in a positive peak above 0, this is not observed, indicating that the baseline should likely be a bit higher.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Yes, FTIR is an option on powder samples, and RAIRS can be used on planar reflective substrates.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Because these are FTIR difference spectra, the sign of a feature indicates whether a vibrational mode is being created or removed relative to the reference state. After TMA exposure, the positive δₛ(CH₃) peak near ~1225 cm⁻¹ shows that methyl groups are added to the surface, producing a methyl-terminated Al₂O₃ surface. After HF exposure, the same feature becomes negative, indicating that these CH₃ species are consumed or removed. This sign inversion directly demonstrates the self-limiting alternation between methylation and demethylation that underpins the ALE cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After TMA (blue):\\n-Strong positive CH₃ band at ~1225 cm⁻¹\\n-Negative deviation mainly centered near ~960–900 cm⁻¹\\n-Perturbation of oxide vibrations due to surface methylation\\nAfter HF (red):\\n-CH₃ band becomes negative (methyl removal)\\n-Negative features extend more strongly into ~900–800 cm⁻¹\\n-Spectral evolution consistent with fluorination and AlFₓ-like surface formation\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TMA half-cycle converts surface Al sites into methyl-terminated species, which is clearly reflected by the strong positive δₛ(CH₃) feature near ~1225 cm⁻¹. This methyl termination modifies the local Al–O bonding environment, producing negative deviations in the oxide-related spectral region. The HF half-cycle reverses this chemistry by removing methyl groups and introducing fluorine, leading to disappearance or inversion of the CH₃ band and stronger negative features in the lower-wavenumber region associated with fluorinated Al–O or AlFₓ-like structures. Structurally, this alternating termination is essential for achieving self-limiting ALE rather than uncontrolled etching.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-The ~1225 cm⁻¹ δₛ(CH₃) band can serve as a cycle-completion marker: positive after TMA and negative after HF.\\n-Residual positive CH₃ signal after HF would indicate incomplete HF reaction or insufficient purge.\\n-Growth of negative features in the ~900–800 cm⁻¹ region confirms effective fluorination during HF exposure.\\n-Consistent alternation between CH₃ and AlFₓ spectral signatures verifies that the process is operating in a true ALE regime rather than continuous etching.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After the TMA exposure, AlCH₃* surface species are identified (as AlF₂(CH₃)* or –OAl(CH₃)₂*) via the methyl deformation mode at ~1212 cm⁻¹. After the HF exposure, AlF* surface species are formed, and the AlCH₃* species are removed.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectral changes in the 800–1000 cm⁻¹ region are opposite for TMA and HF exposures, reflecting their complementary roles in the ALE mechanism. After TMA exposure, a decrease in absorbance is observed in this region, corresponding to the loss of Al–F stretching vibrations as TMA removes the AlF₃ surface layer through the ligand-exchange reaction. After HF exposure, the spectrum shows a complex pattern: a broad absorbance loss from Al₂O₃ being converted to AlF₃, with a smaller absorbance increase between ~850–950 cm⁻¹ superimposed, indicating formation of the new AlF₃ layer. This cyclic behavior confirms the fluorination/ligand-exchange mechanism.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Although all these species would exhibit a methyl deformation mode near 1212 cm⁻¹, the vibrational feature is attributed to surface-bound AlF₂(CH₃)* or –OAl(CH₃)₂* rather than AlF(CH₃)₂ because AlF(CH₃)₂ is a volatile species with a vapor pressure of 80 Torr at 100°C. At the 300°C reaction temperature, any AlF(CH₃)₂ formed would rapidly desorb from the surface and would not be detected in the FTIR spectrum. The observed 1212 cm⁻¹ peak therefore corresponds to methyl-containing species that remain bound to the surface after TMA exposure.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. HF exposure (fluorination)\\n\\n2. Purge\\n\\n3. TMA exposure (ligand exchange)\\n\\n4. Purge\\nThe purge removes volatile byproducts and unreacted precursors, preventing gas-phase reactions and ensuring each subsequent half-cycle begins with a clean, well-defined surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If the Red loss peak were smaller than the Blue gain peak, it would imply incomplete removal of methyl ligands during the HF step. This accumulation of organic residue would eventually contaminate the surface, blocking active sites and causing the etch rate to slow down or stop entirely over time (drift), rather than maintaining the constant rate required for manufacturing.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Thermal ALE is preferable for temperature-sensitive substrates. It operates at a defined, moderate temperature (300°C) without ion bombardment, minimizing substrate damage and defect generation. Plasma ALE, while potentially faster, risks ion-induced damage and requires careful management of UV/VUV photon effects.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the process will be perfectly conformal in high-aspect-ratio structures. The self-limiting surface reactions ensure etching proceeds layer-by-layer uniformly on all exposed surfaces, regardless of geometry, enabling precise depth control and profile retention in complex 3D architectures.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"del(CH3) = AlCH3* species may be present as either\\n1. AlF(CH3)2*\\n2. AlF2(CH3)*\\n3. −OAl(CH3)2*.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"AlCH3* represents methyl deformation mode and species may be present as either\\n1. AlF(CH3)2*\\n2. AlF2(CH3)*\\n3. −OAl(CH3)2*.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"AlF(CH3)2 is expected to have a higher volatility than other species, the vibrational feature at 1212 cm−1 is likely attributed to AlF2(CH3)* or −OAl(CH3)2* . In addition, a decrease in absorbance between ∼850 and 975 cm−1 is observed that is consistent with the loss of absorbance from Al−F stretching vibrations as TMA removes the AlF3 surface layer. The absorbance is completely removed for the vibrational feature attributed to the addition of AlCH3* species after HF exposure. This loss of absorbance is in accord with the conversion of AlCH3* surface species to AlF* species. This is in agreement with the conversion of Al2O3 into AlF. Hence alternating the exposure eventually leads to removal/etching.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An increase in absorbance at 1212 cm^-1 is observed and a decrease between 850 and 975 cm^-1. The increase at 1212 cm^-1 is attributed to the formation of AlCH3* surface species, which may be present as either AlF(CH3)2*, AlF2(CH3)*, or −OAl(CH3)2*. Given the high volatility of AlF(CH3)2, the most likely species are AlF2(CH3)* or −OAl(CH3)2*. The loss of absorbance between 850 and 975 cm^-1 is consistent with the loss of Al-F bonds as TMA removes the AlF3 surface layer.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the magnitudes of absorbance loss and increase are the same, it means that all AlCH3* surface species get converted to AlF* surface species during HF exposure (and vice versa during TMA exposure).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"800 to 1100 cm^-1.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"800 to 975 cm^-1.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Methyl groups, as indicated by the gain in the δs(CH₃) region.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"AlF₃\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Methyl groups, as indicated by the loss in the δs(CH₃) region.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TMA half-cycle appears to drive the Al₂O₃ removal. It shows a clear negative change in the Al₂O₃ band region (~900–1000 cm⁻¹), consistent with loss of Al–O absorbance during that step. In contrast, the HF half-cycle mainly removes CH₃ (negative CH₃ band) and increases AlF₃-related bands (~800–950 cm⁻¹), suggesting surface fluorination rather than the main oxide-removal step.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TMA spectrum shows a strong positive peak at this position, while the HF spectrum displays a negative feature of similar magnitude. This indicates that TMA adds CH₃ containing species to the surface, where HF removes or changes them. The opposite signs reflect contrasting surface reactions during each exposure.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"TMA exposure, HF exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The absorbance at ~1212 cm⁻¹ decreases after HF exposure, indicating conversion of AlCH₃* to AlF* species.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Al–O stretching vibrations (~850–975 cm⁻¹), AlCH₃ methyl deformation (~1212 cm⁻¹), Al–F stretching and AlF₃ formation (~850–1100 cm⁻¹)\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The FTIR difference spectra demonstrate that the ALE process effectively modifies the Al₂O₃ surface. TMA exposures form AlCH₃* species, while subsequent HF exposures remove these species and convert Al₂O₃ to AlF₃, as indicated by broad absorbance changes. This confirms that the sequential, self-limiting reactions are working as intended, enabling controlled layer-by-layer etching of Al₂O₃ on ZrO₂ nanoparticles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_12.jpg","caption":"Figure 12. Difference infrared absorbance spectra from 2500 to 4000 $\\mathrm{cm}^{-1}$ during $\\mathrm{Al}_2\\mathrm{O}_3$ ALE at $300^{\\circ}\\mathrm{C}$ . The difference spectra recorded after the (a) TMA and (b) HF exposures were referenced using the spectra after the previous HF and TMA exposures, respectively.","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_12","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_12","subset":"multi-spectra-chart","split":"validation","classification":[{"panel_id":"a","label":"multi spectra chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_12.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":655,"height":580,"image_format":"jpeg","image_sha256":"d91ef7fcdae09c5b369aac167deb329f805abc5fb333cf480c618227a5f8e4e8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":655,"height":580}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The FTIR spectra compare TMA and HF exposures on Al2O3 at 300 °C in the 4000–2500 cm^-1 region. The TMA spectrum shows a positive CH3 stretching feature near 2950 cm^-1, while the HF spectrum shows negative absorbance changes at this position. HF also produces a broader negative band near 3200 cm^-1, whereas the TMA trace remains close to baseline there. These differences show opposite surface reactions during the two exposures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance | Condition |\\n| ----------------- | ---------- | --------- |\\n| ~2950 | ~+0.010 | TMA |\\n| ~2950 | ~-0.005 | HF |\\n| ~3200 | ~+0.002 | TMA |\\n| ~3200 | ~-0.010 | HF |\\n| ~3600 | ~0.000 | TMA |\\n| ~3600 | ~-0.003 | HF |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA, based on the positive absorbance value.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In this case, positive values represent groups being supplied to the surface. Conversely, negative values show groups being lost from the surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All the CH3 seems to be removed as the peaks have similar height.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, there is no HF formed as there is no positive peak visible in the HF IR active region.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At least three can be observed. The main peak consists of two sharp peaks close together, with a shoulder to the right.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, in general there must be a certain signal to noise ratio to be able to identify actual peaks. In this region, the signal seems to be fully comprised of noise.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In FTIR difference spectra, a positive signal indicates formation of a vibrational species relative to the reference state, while a negative signal indicates its removal. The positive band at ~2950–2900 cm⁻¹ after TMA shows that CH₃/C–H-containing surface species are formed during the TMA half-cycle. After HF, the same region becomes strongly negative, indicating that these species are consumed or removed. This sign inversion directly demonstrates cyclic surface termination changes that are characteristic of Al₂O₃ ALE.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The HF half-cycle produces the larger magnitude change (≈ −0.010) compared with the TMA half-cycle (≈ +0.007).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-CH₃/C–H region (~2950–2900 cm⁻¹):\\n1) After TMA: positive (≈ +0.0070)\\n2) After HF: negative (≈ −0.0100)\\n\\n-Lower C–H tail (~2750–2500 cm⁻¹):\\n1) After TMA: small positive (≈ +0.0020)\\n2) After HF: small negative (≈ −0.0030)\\n\\n-ν(HF)-marked higher wavenumbers (~4000–3250 cm⁻¹):\\n1) After TMA: ~0.0000 (near baseline)\\n2) After HF: slightly negative (≈ −0.0015)\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A robust acceptance criterion is the behavior of the CH stretching region around 2950–2900 cm⁻¹. A healthy process should show a reproducible positive excursion after TMA and a reproducible negative excursion after HF. Loss of the positive CH signal after TMA would suggest incomplete methylation, while failure of the signal to invert after HF would indicate insufficient HF reaction or purge issues. Monitoring both sign and magnitude provides a simple, chemistry-specific indicator of cycle completeness.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The absence of HF* surface species at 300°C is critical for enabling etching rather than deposition. At lower temperatures, HF* species remain adsorbed on the surface and react with incoming TMA to form AlF₃, leading to AlF₃ ALD growth. At 300°C, HF* species desorb from the surface, which allows TMA to instead accept fluorine directly from the underlying AlF₃ layer through the ligand-exchange transmetalation reaction, producing volatile AlF(CH₃)₂ etch products. Temperature therefore determines whether the TMA/HF chemistry leads to AlF₃ ALD or Al₂O₃ ALE.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The C–H stretching peaks at ~2900 and ~2950 cm⁻¹ show positive absorbance (gain) after TMA exposure and negative absorbance (complete loss) after HF exposure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"These peaks correspond to the symmetric (~2900 cm⁻¹) and asymmetric (~2950 cm⁻¹) C–H stretching vibrations of AlCH₃* surface species.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The two spectral regions provide complementary information about different aspects of the ALE surface chemistry. The 800–1300 cm⁻¹ region monitors the Al–O and Al–F stretching vibrations, revealing the removal of the AlF₃ surface layer during TMA exposure and fluorination of Al₂O₃ during HF exposure. The 2500–4000 cm⁻¹ region tracks the C–H stretching vibrations, confirming the cyclic addition and removal of methyl groups during TMA and HF half-cycles. Additionally, the higher wavenumber region allows detection of any HF* surface intermediates; their absence at 300°C explains why etching occurs rather than AlF₃ deposition. Together, these data provide a complete picture of the surface species involved in each half-reaction.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The FTIR measures the appearance of new C–H stretching vibrations (νₐₛ,ₛ(CH₃)) from methyl groups deposited by TMA. This confirms the ligand-exchange reaction where TMA replaces surface fluorides with –CH₃, a critical step in forming volatile etch products.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"FTIR provides direct chemical bonding information, identifying specific surface species like Al–CH₃ and adsorbed HF. A limitation is that it requires specialized transparent substrates or particles, whereas QCM works on any thin film but only measures mass change, not chemistry.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ν(HF) feature indicates that molecular HF adsorbs onto the Al₂O₃ surface before dissociating. This adsorbed precursor state is essential for the subsequent fluorination reaction that converts surface Al–O bonds to Al–F bonds, enabling the etching mechanism.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, While the self-limiting mechanism is confirmed, selectivity depends on the relative reactivity of HF/TMA with Al₂O₃ versus SiO₂. The spectra alone don't prove selectivity; a separate experiment comparing etch rates on both materials is required to guarantee selective removal.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After the TMA exposure, an increase in absorbance is observed at ∼2900 and 2950 cm−1 .\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After TMA exposure, n increase in absorbance is observed at ∼2900 and 2950 cm−1, this absorbance gain is in accord with the formation of AlF2(CH3)* or −OAl(CH3)2* species . After the HF exposure, an absorbance decrease at ∼2900 and ∼2950 cm−1 is consistent with the removal of the previously added AlCH3* species\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At about 2900 and 2950 cm^-1.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"AlCH3* surface species, consistent with the formation of AlF2(CH3)* or -OAl(CH3)2*.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The absorbance at those wavenumbers decreases, indicating the removal of AlCH3* surface species.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF removes methyl (–CH₃) species from the surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA adds methyl (–CH₃) groups to the surface\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectra at 300 °C point to an ALE-like regime rather than AlF₃ ALD. The spectra indicate no clear change in the ν(HF) region. If HF surface species are required intermediates for ALD, then the lack of a clear HF-related band suggests those HF species are not persisting on the surface, and the ALD pathway is not favored at this temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"CH₃ doesn't accumulate over repeated cycles, based on the magnitude of the absorbance during each half-cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"~2950cm^-1, ~3200cm^-1, ~3600cm^-1\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TMA spectrum shows a small positive peak at this position, consistent with CH3 stretching from methyl groups bonded to the surface. In contrast, the HF spectrum displays a negative feature at the same location, indicating removal or changeof these groups. This opposite behavior shows the different surface chemistry caused by the two exposures.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The absorbance at ~2900 cm⁻¹ and ~2950 cm⁻¹ decreases after HF exposure, indicating removal of AlCH₃* species.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Symmetric stretching of AlCH₃ (~2900 cm⁻¹), Asymmetric stretching of AlCH₃ (~2950 cm⁻¹), Absence of HF vibrational features between ~3000–3675 cm⁻¹\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increase in absorbance at ~2900 and 2950 cm⁻¹ after TMA exposure and their subsequent removal after HF exposure demonstrate that the ALE process is effectively forming and removing AlCH₃* surface species. The absence of HF* features in this region indicates that at 300 °C, HF desorbs efficiently, enabling TMA to react with the underlying AlF₃ layer and produce controlled etching of Al₂O₃. These trends confirm the self-limiting nature and effectiveness of the ALE process under the described conditions.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_11_fig_8.jpg","caption":"Fig. 8. Auger depth profile of the nanolaminate film stack $(9 \\times (\\mathrm{WN}_{\\mathrm{x}} \\mathrm{C}_{\\mathrm{y}} (2 \\mathrm{~nm}) + \\mathrm{TiN} (2 \\mathrm{~nm}))$ .","id":"validation/atomic-layer-deposition/experimental-usecase/11/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/11/fig_8","subset":"multi-spectra-chart","split":"validation","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot shows atomic concentrations of W, C, N, Ti, O, F and Si as a function of sputter time through the 9×(WNₓCᵧ (2 nm) + TiN (2 nm)) nanolaminate. W and C are high and oscillatory (peaks at the WNₓCᵧ layers), Ti and N show complementary oscillations (peaks at the TiN layers), and the periodic waveform confirms the multilayer architecture is preserved. Fluorine is essentially negligible, oxygen is low in the bulk but rises at the surface (air exposure), and silicon sharply increases at the end when the substrate is reached — together indicating well-defined interfaces, low contamination, and minimal interdiffusion.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sputter Time (min)|W (%)|C (%)|N (%)|Ti (%)|O (%)|F (%)|Si (%)|\\n|-------------------|-----|-----|-----|------|-----|-----|------|\\n|0|~10|~15|~8|~5|~2|~0.5|~0|\\n|5|~48|~30|~10|~6|~1|~0.3|~0|\\n|10|~52|~32|~11|~7|~1|~0.3|~0|\\n|15|~50|~30|~10|~6|~1|~0.2|~0|\\n|20|~45|~25|~9|~5|~1|~0.2|~0|\\n|25|~2|~5|~3|~1|~10–50 rising|~0.2|sharply rising|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The repeating elemental peaks confirm that the alternating WNₓCᵧ and TiN layers remain well-defined throughout the depth of the film. Such structural periodicity creates numerous interfaces that disrupt continuous diffusion pathways, making it more difficult for copper or other species to penetrate the barrier. The low fluorine content and minimal intermixing further enhance chemical stability, leading to reliable performance in semiconductor interconnect applications.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"W and Ti show repeated peaks and valleys corresponding to the nanolaminate layering, while O and Si remain low until the surface or substrate is reached, where they rise sharply.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the periodic oscillations in W, C, N, and Ti concentrations clearly confirm the alternating multilayer structure.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Very low fluorine levels throughout the stack, Stable, repeating concentration oscillations, Sharp rise of Si only at the substrate interface, Low oxygen in the bulk with expected surface oxidation\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":658,"height":619}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/K.-E. Elers et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":658,"height":619,"image_format":"jpeg","image_sha256":"a5b7c42f58ad8e2691fefdcfb70c7a8f94737e1fa95c6999413edca27591a9b4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_58_fig_2.jpg","caption":"FIG. 2. XPS spectrum of PE-ALD Co for silicon core-level region after selective etching of Co film.","id":"validation/atomic-layer-deposition/experimental-usecase/58/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/58/fig_2","subset":"multi-spectra-chart","split":"validation","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a Si core level spectrum for PE-ALD Co/Si(001) with raw data, deconvoluted components, and peak sum.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Intensity (a.u.) |\\n|---|---|\\n| 94 | 0 |\\n| 96 | 0 |\\n| 98 | 0.5 |\\n|99|1|\\n| 100 | 0.4 |\\n| 102 | 0.4 |\\n| 104 | 0 |\\n| 106 | 0 |\\n| 108 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No this is not the case, as the pure silicon peal is just the sharp peak and not the shoulder.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The shoulder extends from 104 to 100 eV, this is usually a range in which there is also SiO2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that you are overfitting the data resulting in contributions of composition that are not accurate.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":600,"height":466}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/Lee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:image_caption"},"width":602,"height":470,"image_format":"jpeg","image_sha256":"8895b2fcb15f599106b32e838dac14622e94290a91150375d36cda7f3f0f808e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_13_fig10.jpg","caption":"Fig.10 (a) XPS C 1s spectrum of pristine and graphene treated with 5 min $\\Omega_2$ plasma; (b-f) SEM images showing the Pt coverage after 500 ALD cycles using $\\mathrm{MeCpPtMe}_3$ as the Pt precursor on (b) pristine graphene and graphene treated with (c) 1 min, (d) 2 min, (e) 3 min and (f) 5 min $\\Omega_2$ plasma.","id":"validation/atomic-layer-deposition/simulation-usecase/13/fig10","sample_id":"atomic-layer-deposition/simulation-usecase/13/fig10","subset":"multi-spectra-chart","split":"validation","classification":[{"panel_id":"a","label":"multi spectra chart"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS C 1s spectra comparing pristine graphene and graphene exposed to 5 min O₂ plasma, showing formation of C–O and C=O bonds and partial conversion of sp² carbon to sp³.\"},{\"panel_id\":\"b\",\"text\":\"SEM image of Pt deposition after 500 ALD cycles on pristine graphene (0 min O₂ plasma), showing limited nucleation and sparse Pt coverage.\"},{\"panel_id\":\"c\",\"text\":\"SEM image of Pt deposition after 500 ALD cycles on graphene treated with 1 min O₂ plasma, showing increased Pt nucleation and partial coverage.\"},{\"panel_id\":\"d\",\"text\":\"SEM image of Pt deposition after 500 ALD cycles on graphene treated with 2 min O₂ plasma, showing further enhancement of Pt coverage.\"},{\"panel_id\":\"e\",\"text\":\"SEM image of Pt deposition after 500 ALD cycles on graphene treated with 3 min O₂ plasma, showing near-continuous Pt domains forming.\"},{\"panel_id\":\"f\",\"text\":\"SEM image of Pt deposition after 500 ALD cycles on graphene treated with 5 min O₂ plasma, showing a nearly continuous Pt layer with uniform coverage across the graphene surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | sp² | C–O | C=O | Plasmon 1 | Plasmon 2 | Sample |\\n|---|---|---|---|---|---|---|\\n| 284.4 | Major | Minor | 0 | 0 | 0 | Pristine graphene |\\n| 286.4 | 0 | Minor | 0 | 0 | 0 | Pristine graphene |\\n| 290.4 | 0 | 0 | 0 | Minor | 0 | Pristine graphene |\\n| 293.2 | 0 | 0 | 0 | 0 | Minor | Pristine graphene |\\n| 284.6 | Minor | Minor | 0 | 0 | 0 | 5 min O₂ plasma graphene |\\n| 286.4 | 0 | Minor | 0 | 0 | 0 | 5 min O₂ plasma graphene |\\n| 289.0 | 0 | 0 | Minor | 0 | 0 | 5 min O₂ plasma graphene |\"},{\"panel_id\":\"b\",\"text\":\"| Sample | Pristine | 1 min O₂ Plasma |\\n|---|---|---|\\n| SEM Image | image_path | image_path |\"},{\"panel_id\":\"c\",\"text\":\"| Sample | 2 min O₂ Plasma |\\n|---|---|\\n| SEM Image | image_path |\"},{\"panel_id\":\"d\",\"text\":\"| Sample | 3 min O₂ Plasma |\\n|---|---|\\n| SEM Image | image_path |\"},{\"panel_id\":\"e\",\"text\":\"| Sample | 5 min O₂ Plasma |\\n|---|---|\\n| SEM Image | image_path |\"},{\"panel_id\":\"f\",\"text\":\"| Sample | 1000 ALD cycles on 5 min O₂ Plasma |\\n|---|---|\\n| SEM Image | image_path |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. O₂ plasma functionalizes the graphene surface, creating C–O and C=O groups that promote Pt nucleation and increase coverage during ALD.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SEM images show that Pt coverage progressively increases with longer O₂ plasma exposure. After 1 minute, small Pt particles are sparsely distributed. With 2–3 minutes, coverage becomes more uniform, and after 5 minutes, the Pt forms an almost continuous layer, indicating that longer plasma treatment enhances surface functionalization and facilitates nucleation.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Introduces oxygen-containing functional groups (C–O, C=O) that enhance precursor adsorption, Increases surface reactivity and Pt coverage, Facilitates formation of a nearly continuous Pt layer after sufficient plasma exposure, Reduces the dependence on defect sites alone for Pt nucleation, improving uniformity\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Partial conversion of sp² to sp³ carbon, formation of C–O (286.4 eV) and C=O (289.0 eV) bonds, and the appearance of plasmon features at 290.4 eV and 293.2 eV.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":371,"height":282},{"panel_id":"b","x":379,"y":4,"width":355,"height":266},{"panel_id":"c","x":746,"y":5,"width":359,"height":265},{"panel_id":"d","x":4,"y":286,"width":355,"height":254},{"panel_id":"e","x":377,"y":288,"width":353,"height":254},{"panel_id":"f","x":751,"y":285,"width":353,"height":255}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/Bora Karasulu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":1108,"height":541,"image_format":"jpeg","image_sha256":"652c94cf0c11785a58d6dd234b64d9653960db31499bfb0b6d3f96a1117304df","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_10.jpg","caption":"Figure 10. Infrared absorbance showing the loss of $\\mathrm{Al - O}$ stretching vibration in bulk $\\mathrm{Al}_2\\mathrm{O}_3$ versus number of $\\mathrm{Al}_2\\mathrm{O}_3$ ALE cycles at $300^{\\circ}\\mathrm{C}$ . These FTIR spectra were referenced to the initial $\\mathrm{ZrO}_2$ nanoparticles.","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_10","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_10","subset":"multi-spectra-chart","split":"validation","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This in situ FTIR spectroscopy measurement shows the progressive loss of infrared absorbance from Al–O stretching vibrations (800–1000 cm⁻¹) during Al₂O₃ ALE at 300°C. The spectra are referenced to the initial ZrO₂ nanoparticle substrate. As the number of ALE cycles increases from 0 to 4, 6, and 8, the absorbance peak centered around 900 cm⁻¹ systematically decreases in intensity, directly confirming the removal of Al₂O₃ material. The Al₂O₃ film was initially grown using 15 cycles of Al₂O₃ ALD with TMA and H₂O at 150°C, then etched using sequential TMA and HF exposures at 300°C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance (0 cycles) | Absorbance (4 cycles) | Absorbance (6 cycles) | Absorbance (8 cycles) |\\n|---|---:|---:|---:|---:|\\n| 1300 | ~0.06 | ~0.05 | ~0.04 | ~0.03 |\\n| 1100 | ~0.06 | ~0.05 | ~0.04 | ~0.03 |\\n| 940 | ~0.59 | ~0.56 | ~0.50 | ~0.40 |\\n| 900 | ~0.53 | ~0.52 | ~0.42 | ~0.38 |\\n| 800 | ~0.00 | ~0.00 | ~0.00 | ~0.00 |\\n| 700 | ~0.00 | ~0.00 | ~0.00 | ~0.00 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The absorbance intensity is studied as a function of the number of cycles of etching applied to the Al2O3 films.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch rate is higher with 8 cycles, which is why the spectra show the lowest absorbance intensity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of cycles increases, the absorbance peak of Al2O3 decreases slightly and shifts towards higher wavenumber values.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The trend in absorbance is non-linear. This does not mean that the etching is non-linear, to conclude this, the integrated absorbance of the full peak must be considered.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Al-F is a bond with permanent dipole so it will vibrate upon IR absorption.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For thicker films, generally broader peaks are observed, by decreasing the film thickness with the etch process, the peak gets more narrow.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No the composition does not change based on the given data, as the peak shape remains constant.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Al–O stretching peak in the ~900–1000 cm⁻¹ region systematically decreases as the ALE cycle count increases from 0 to 8. Because FTIR absorbance is proportional to the amount of the corresponding bonding environment, this monotonic decrease indicates a reduction in Al–O content. This directly implies progressive thinning or removal of the Al₂O₃ film during the ALE process.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"- Acquire a reference spectrum (here: referenced to the initial ZrO2 nanoparticles) before ALE begins.\\n- Record spectra after defined numbers of ALE cycles (e.g., 0, 4, 6, 8).\\n- Identify the Al2O3/Al–O stretching region (here centered around ~900–1000 cm⁻¹).\\n- Compare peak height/area across cycles to check for a monotonic decrease.\\n- Confirm that the baseline regions (outside the Al–O band) remain relatively stable to rule out simple scaling artifacts.\\n- Interpret the decreasing Al–O band intensity as reduced Al–O content consistent with material removal.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Al–O stretching vibration in bulk Al2O3.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Al–O band intensity provides a chemically specific indicator of the remaining Al₂O₃ material. An ALE endpoint could be defined when the Al–O absorbance falls below a predetermined threshold or approaches the baseline. Monitoring the rate of absorbance decrease per cycle can also reveal changes in etch efficiency, enabling real-time adjustment of exposure or cycle count to achieve consistent material removal.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ZrO₂ nanoparticles were chosen as the substrate because they provide a high surface area that enhances the FTIR signal from the deposited Al₂O₃ film and subsequent surface reactions. Critically, ZrO₂ absorbs infrared radiation only between approximately 400–800 cm⁻¹, leaving an open spectral window above 800 cm⁻¹ where the Al–O stretching vibrations of Al₂O₃ can be monitored without interference. This allows clear observation of the Al₂O₃ absorbance changes during the ALE process. The nanoparticles were pressed into a tungsten grid that could be resistively heated for temperature control.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The absorbance between 800 and 1000 cm⁻¹ progressively decreases with increasing ALE cycles, confirming the removal of Al₂O₃ material.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The broad absorbance peak between 800 and 1000 cm⁻¹ corresponds to Al–O stretching vibrations in the bulk Al₂O₃ film. The intensity of infrared absorbance is directly proportional to the amount of the absorbing species present, following Beer-Lambert principles. As the Al₂O₃ film is etched away through the sequential TMA and HF reactions, there are fewer Al–O bonds available to absorb infrared radiation at these frequencies. The progressive decrease in peak intensity from 0 to 8 ALE cycles therefore provides direct spectroscopic evidence that the Al₂O₃ material is being removed from the substrate.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. While QCM measures mass changes, FTIR provides chemical-specific information by tracking the loss of Al–O bonds and can also identify surface intermediates such as AlF* and AlCH₃* species formed after HF and TMA exposures, respectively.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1) Expose the Al₂O₃ surface to a fluorinating reactant (e.g., HF).\\n\\n2) Purge with inert gas to remove excess reactant and byproducts.\\n\\n3) Expose to a second reactant (e.g., TMA) to form volatile species.\\n\\n4) Purge again to clear the chamber.\\nReferencing to the initial ZrO₂ nanoparticles subtracts the strong infrared absorption background of the substrate, isolating the signal from the Al₂O₃ film and allowing accurate measurement of the Al–O bond removal.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ALE is superior for 3D nanostructures because it offers anisotropic, self-limiting etching with perfect conformality. Wet etching is isotropic and difficult to control at the nanometer scale. The trade-off is that ALE is significantly slower and requires more complex equipment than a simple wet etch.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Al–O bond concentration decreases linearly with each ALE cycle, as shown by the diminishing peak absorbance. This occurs because each cycle converts a self-limiting layer of surface Al₂O₃ into volatile aluminum fluoride and aluminum methyl species, which are purged away, systematically etching the film.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies that ALE can precisely tune the gate dielectric thickness with atomic-scale accuracy. Such control is essential for setting the exact threshold voltage and leakage current in scaled transistors, enabling performance optimization and device matching across a wafer.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It describes the number of ALE cycles and how the FTIR spectra changes after 4 ALE cycles, 6 ALE cycles and 8 ALE cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Al-O stretching is observed between 800 cm-1 and 1000 cm−1\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"the sample temperature was raised to 300 °C, and the Al2O3 film was etched using sequential exposures of TMA and HF. FTIR spectra recorded during the TMA and HF exposures at 300 °C. The progressive loss in absorbance between 800 and 1000 cm−1 with ALE cycles is in agreement with the etching of the Al2O3 film.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. These FTIR spectra were referenced to the initial ZrO2 nanoparticles\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Al-O peak decreases as the cycle count increases from 0 to 8. This indicates that the amount of material contributing to that vibration is decreasing with each cycle. Overall, the spectra are consistent with progressive etching of the Al₂O₃ layer during ALE.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Systematic shift in peak position (from about 930 to ~921 cm⁻¹).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Peak shape\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It decreases more slowly at the beginning.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"0,4,6, 8.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The peak near 1000 cm^-1 steadily decreases in height with increasing ALE cycles. The 0-cycle spectrum shows the strongest feature, and each followingspectrum is progressively lower. This indicates that repeated ALE steps remove or change the surface species responsible for this absorption.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The absorbance progressively decreases with increasing ALE cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Al–O stretching vibrations in bulk Al₂O₃, Surface hydroxyl (Al–OH) groups, indicating surface reactions during ALE\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The progressive loss of Al–O absorbance indicates effective etching of the Al₂O₃ film during ALE cycles. This confirms that the sequential TMA and HF exposures at 300 °C can selectively remove Al₂O₃ layers on ZrO₂ nanoparticles, which is critical for controlled layer-by-layer modification in atomic layer etching applications.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":664,"height":619}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":664,"height":619,"image_format":"jpeg","image_sha256":"cc176a3f88b42586cf2564d95daeda8a1b2b04caf52cc15862a44378cf800f06","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_11.jpg","caption":"Figure 11 displays the FTIR difference spectra at 800-1300 $\\mathrm{cm}^{-1}$ after consecutive TMA and HF exposures during the fifth","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_11","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_11","subset":"multi-spectra-chart","split":"validation","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The FTIR spectra compare TMA and HF exposures on Al2O3 at 300 °C. The TMA trace shows a strong positive peak near 1230 cm^-1 associated with CH3 deformation, while the HF trace shows a negative feature at the same position. HF also produces additional negative bands in the 1100–900 cm^-1 region that are linked to AlF3 formation but the TMA spectrum remains close to baseline in this range.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance | Condition |\\n| ----------------- | ---------- | --------- |\\n| ~1230 | ~+0.065 | TMA |\\n| ~1230 | ~-0.055 | HF |\\n| ~1100 | ~+0.010 | TMA |\\n| ~1100 | ~-0.015 | HF |\\n| ~950 | ~+0.005 | TMA |\\n| ~950 | ~-0.020 | HF |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"During the cycles, TMA provides the film with CH3 groups but removes AlF3 from the surface, in accordance with the negative value between 800 and 950 cm⁻¹. Also, after exposure to HF, it is possible to observe, the an increased peak in AlF3 band, due to the formation of AlF3.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, in this case, the TMA provides the film with CH3 groups based on the positive absorbance peaks.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The HF exposure produces the surface etching, resulting in the desorption of CH3 groups and the provision of AlF3 to the surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A positive peak means that bonds with corresponding vibrations are added to the surface, whereas a negative peak indicates the removal of bonds from the surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes, the positive and negative CH3 absorption peak are equaly big.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If AlF3 is added, this would result in a positive peak above 0, this is not observed, indicating that the baseline should likely be a bit higher.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Yes, FTIR is an option on powder samples, and RAIRS can be used on planar reflective substrates.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Because these are FTIR difference spectra, the sign of a feature indicates whether a vibrational mode is being created or removed relative to the reference state. After TMA exposure, the positive δₛ(CH₃) peak near ~1225 cm⁻¹ shows that methyl groups are added to the surface, producing a methyl-terminated Al₂O₃ surface. After HF exposure, the same feature becomes negative, indicating that these CH₃ species are consumed or removed. This sign inversion directly demonstrates the self-limiting alternation between methylation and demethylation that underpins the ALE cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After TMA (blue):\\n-Strong positive CH₃ band at ~1225 cm⁻¹\\n-Negative deviation mainly centered near ~960–900 cm⁻¹\\n-Perturbation of oxide vibrations due to surface methylation\\nAfter HF (red):\\n-CH₃ band becomes negative (methyl removal)\\n-Negative features extend more strongly into ~900–800 cm⁻¹\\n-Spectral evolution consistent with fluorination and AlFₓ-like surface formation\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TMA half-cycle converts surface Al sites into methyl-terminated species, which is clearly reflected by the strong positive δₛ(CH₃) feature near ~1225 cm⁻¹. This methyl termination modifies the local Al–O bonding environment, producing negative deviations in the oxide-related spectral region. The HF half-cycle reverses this chemistry by removing methyl groups and introducing fluorine, leading to disappearance or inversion of the CH₃ band and stronger negative features in the lower-wavenumber region associated with fluorinated Al–O or AlFₓ-like structures. Structurally, this alternating termination is essential for achieving self-limiting ALE rather than uncontrolled etching.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-The ~1225 cm⁻¹ δₛ(CH₃) band can serve as a cycle-completion marker: positive after TMA and negative after HF.\\n-Residual positive CH₃ signal after HF would indicate incomplete HF reaction or insufficient purge.\\n-Growth of negative features in the ~900–800 cm⁻¹ region confirms effective fluorination during HF exposure.\\n-Consistent alternation between CH₃ and AlFₓ spectral signatures verifies that the process is operating in a true ALE regime rather than continuous etching.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After the TMA exposure, AlCH₃* surface species are identified (as AlF₂(CH₃)* or –OAl(CH₃)₂*) via the methyl deformation mode at ~1212 cm⁻¹. After the HF exposure, AlF* surface species are formed, and the AlCH₃* species are removed.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectral changes in the 800–1000 cm⁻¹ region are opposite for TMA and HF exposures, reflecting their complementary roles in the ALE mechanism. After TMA exposure, a decrease in absorbance is observed in this region, corresponding to the loss of Al–F stretching vibrations as TMA removes the AlF₃ surface layer through the ligand-exchange reaction. After HF exposure, the spectrum shows a complex pattern: a broad absorbance loss from Al₂O₃ being converted to AlF₃, with a smaller absorbance increase between ~850–950 cm⁻¹ superimposed, indicating formation of the new AlF₃ layer. This cyclic behavior confirms the fluorination/ligand-exchange mechanism.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Although all these species would exhibit a methyl deformation mode near 1212 cm⁻¹, the vibrational feature is attributed to surface-bound AlF₂(CH₃)* or –OAl(CH₃)₂* rather than AlF(CH₃)₂ because AlF(CH₃)₂ is a volatile species with a vapor pressure of 80 Torr at 100°C. At the 300°C reaction temperature, any AlF(CH₃)₂ formed would rapidly desorb from the surface and would not be detected in the FTIR spectrum. The observed 1212 cm⁻¹ peak therefore corresponds to methyl-containing species that remain bound to the surface after TMA exposure.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. HF exposure (fluorination)\\n\\n2. Purge\\n\\n3. TMA exposure (ligand exchange)\\n\\n4. Purge\\nThe purge removes volatile byproducts and unreacted precursors, preventing gas-phase reactions and ensuring each subsequent half-cycle begins with a clean, well-defined surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If the Red loss peak were smaller than the Blue gain peak, it would imply incomplete removal of methyl ligands during the HF step. This accumulation of organic residue would eventually contaminate the surface, blocking active sites and causing the etch rate to slow down or stop entirely over time (drift), rather than maintaining the constant rate required for manufacturing.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Thermal ALE is preferable for temperature-sensitive substrates. It operates at a defined, moderate temperature (300°C) without ion bombardment, minimizing substrate damage and defect generation. Plasma ALE, while potentially faster, risks ion-induced damage and requires careful management of UV/VUV photon effects.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the process will be perfectly conformal in high-aspect-ratio structures. The self-limiting surface reactions ensure etching proceeds layer-by-layer uniformly on all exposed surfaces, regardless of geometry, enabling precise depth control and profile retention in complex 3D architectures.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"del(CH3) = AlCH3* species may be present as either\\n1. AlF(CH3)2*\\n2. AlF2(CH3)*\\n3. −OAl(CH3)2*.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"AlCH3* represents methyl deformation mode and species may be present as either\\n1. AlF(CH3)2*\\n2. AlF2(CH3)*\\n3. −OAl(CH3)2*.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"AlF(CH3)2 is expected to have a higher volatility than other species, the vibrational feature at 1212 cm−1 is likely attributed to AlF2(CH3)* or −OAl(CH3)2* . In addition, a decrease in absorbance between ∼850 and 975 cm−1 is observed that is consistent with the loss of absorbance from Al−F stretching vibrations as TMA removes the AlF3 surface layer. The absorbance is completely removed for the vibrational feature attributed to the addition of AlCH3* species after HF exposure. This loss of absorbance is in accord with the conversion of AlCH3* surface species to AlF* species. This is in agreement with the conversion of Al2O3 into AlF. Hence alternating the exposure eventually leads to removal/etching.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An increase in absorbance at 1212 cm^-1 is observed and a decrease between 850 and 975 cm^-1. The increase at 1212 cm^-1 is attributed to the formation of AlCH3* surface species, which may be present as either AlF(CH3)2*, AlF2(CH3)*, or −OAl(CH3)2*. Given the high volatility of AlF(CH3)2, the most likely species are AlF2(CH3)* or −OAl(CH3)2*. The loss of absorbance between 850 and 975 cm^-1 is consistent with the loss of Al-F bonds as TMA removes the AlF3 surface layer.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the magnitudes of absorbance loss and increase are the same, it means that all AlCH3* surface species get converted to AlF* surface species during HF exposure (and vice versa during TMA exposure).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"800 to 1100 cm^-1.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"800 to 975 cm^-1.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Methyl groups, as indicated by the gain in the δs(CH₃) region.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"AlF₃\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Methyl groups, as indicated by the loss in the δs(CH₃) region.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TMA half-cycle appears to drive the Al₂O₃ removal. It shows a clear negative change in the Al₂O₃ band region (~900–1000 cm⁻¹), consistent with loss of Al–O absorbance during that step. In contrast, the HF half-cycle mainly removes CH₃ (negative CH₃ band) and increases AlF₃-related bands (~800–950 cm⁻¹), suggesting surface fluorination rather than the main oxide-removal step.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TMA spectrum shows a strong positive peak at this position, while the HF spectrum displays a negative feature of similar magnitude. This indicates that TMA adds CH₃ containing species to the surface, where HF removes or changes them. The opposite signs reflect contrasting surface reactions during each exposure.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"TMA exposure, HF exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The absorbance at ~1212 cm⁻¹ decreases after HF exposure, indicating conversion of AlCH₃* to AlF* species.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Al–O stretching vibrations (~850–975 cm⁻¹), AlCH₃ methyl deformation (~1212 cm⁻¹), Al–F stretching and AlF₃ formation (~850–1100 cm⁻¹)\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The FTIR difference spectra demonstrate that the ALE process effectively modifies the Al₂O₃ surface. TMA exposures form AlCH₃* species, while subsequent HF exposures remove these species and convert Al₂O₃ to AlF₃, as indicated by broad absorbance changes. This confirms that the sequential, self-limiting reactions are working as intended, enabling controlled layer-by-layer etching of Al₂O₃ on ZrO₂ nanoparticles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":666,"height":608}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_11.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":666,"height":608,"image_format":"jpeg","image_sha256":"3b8d2c3e7e53c19a54c0c681768b6929dcf23dbc35c6f9129914d3fc56c7d670","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_12.jpg","caption":"Figure 12. Difference infrared absorbance spectra from 2500 to 4000 $\\mathrm{cm}^{-1}$ during $\\mathrm{Al}_2\\mathrm{O}_3$ ALE at $300^{\\circ}\\mathrm{C}$ . The difference spectra recorded after the (a) TMA and (b) HF exposures were referenced using the spectra after the previous HF and TMA exposures, respectively.","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_12","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_12","subset":"multi-spectra-chart","split":"validation","classification":[{"panel_id":"a","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The FTIR spectra compare TMA and HF exposures on Al2O3 at 300 °C in the 4000–2500 cm^-1 region. The TMA spectrum shows a positive CH3 stretching feature near 2950 cm^-1, while the HF spectrum shows negative absorbance changes at this position. HF also produces a broader negative band near 3200 cm^-1, whereas the TMA trace remains close to baseline there. These differences show opposite surface reactions during the two exposures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance | Condition |\\n| ----------------- | ---------- | --------- |\\n| ~2950 | ~+0.010 | TMA |\\n| ~2950 | ~-0.005 | HF |\\n| ~3200 | ~+0.002 | TMA |\\n| ~3200 | ~-0.010 | HF |\\n| ~3600 | ~0.000 | TMA |\\n| ~3600 | ~-0.003 | HF |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA, based on the positive absorbance value.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In this case, positive values represent groups being supplied to the surface. Conversely, negative values show groups being lost from the surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All the CH3 seems to be removed as the peaks have similar height.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, there is no HF formed as there is no positive peak visible in the HF IR active region.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At least three can be observed. The main peak consists of two sharp peaks close together, with a shoulder to the right.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, in general there must be a certain signal to noise ratio to be able to identify actual peaks. In this region, the signal seems to be fully comprised of noise.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In FTIR difference spectra, a positive signal indicates formation of a vibrational species relative to the reference state, while a negative signal indicates its removal. The positive band at ~2950–2900 cm⁻¹ after TMA shows that CH₃/C–H-containing surface species are formed during the TMA half-cycle. After HF, the same region becomes strongly negative, indicating that these species are consumed or removed. This sign inversion directly demonstrates cyclic surface termination changes that are characteristic of Al₂O₃ ALE.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The HF half-cycle produces the larger magnitude change (≈ −0.010) compared with the TMA half-cycle (≈ +0.007).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-CH₃/C–H region (~2950–2900 cm⁻¹):\\n1) After TMA: positive (≈ +0.0070)\\n2) After HF: negative (≈ −0.0100)\\n\\n-Lower C–H tail (~2750–2500 cm⁻¹):\\n1) After TMA: small positive (≈ +0.0020)\\n2) After HF: small negative (≈ −0.0030)\\n\\n-ν(HF)-marked higher wavenumbers (~4000–3250 cm⁻¹):\\n1) After TMA: ~0.0000 (near baseline)\\n2) After HF: slightly negative (≈ −0.0015)\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A robust acceptance criterion is the behavior of the CH stretching region around 2950–2900 cm⁻¹. A healthy process should show a reproducible positive excursion after TMA and a reproducible negative excursion after HF. Loss of the positive CH signal after TMA would suggest incomplete methylation, while failure of the signal to invert after HF would indicate insufficient HF reaction or purge issues. Monitoring both sign and magnitude provides a simple, chemistry-specific indicator of cycle completeness.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The absence of HF* surface species at 300°C is critical for enabling etching rather than deposition. At lower temperatures, HF* species remain adsorbed on the surface and react with incoming TMA to form AlF₃, leading to AlF₃ ALD growth. At 300°C, HF* species desorb from the surface, which allows TMA to instead accept fluorine directly from the underlying AlF₃ layer through the ligand-exchange transmetalation reaction, producing volatile AlF(CH₃)₂ etch products. Temperature therefore determines whether the TMA/HF chemistry leads to AlF₃ ALD or Al₂O₃ ALE.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The C–H stretching peaks at ~2900 and ~2950 cm⁻¹ show positive absorbance (gain) after TMA exposure and negative absorbance (complete loss) after HF exposure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"These peaks correspond to the symmetric (~2900 cm⁻¹) and asymmetric (~2950 cm⁻¹) C–H stretching vibrations of AlCH₃* surface species.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The two spectral regions provide complementary information about different aspects of the ALE surface chemistry. The 800–1300 cm⁻¹ region monitors the Al–O and Al–F stretching vibrations, revealing the removal of the AlF₃ surface layer during TMA exposure and fluorination of Al₂O₃ during HF exposure. The 2500–4000 cm⁻¹ region tracks the C–H stretching vibrations, confirming the cyclic addition and removal of methyl groups during TMA and HF half-cycles. Additionally, the higher wavenumber region allows detection of any HF* surface intermediates; their absence at 300°C explains why etching occurs rather than AlF₃ deposition. Together, these data provide a complete picture of the surface species involved in each half-reaction.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The FTIR measures the appearance of new C–H stretching vibrations (νₐₛ,ₛ(CH₃)) from methyl groups deposited by TMA. This confirms the ligand-exchange reaction where TMA replaces surface fluorides with –CH₃, a critical step in forming volatile etch products.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"FTIR provides direct chemical bonding information, identifying specific surface species like Al–CH₃ and adsorbed HF. A limitation is that it requires specialized transparent substrates or particles, whereas QCM works on any thin film but only measures mass change, not chemistry.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ν(HF) feature indicates that molecular HF adsorbs onto the Al₂O₃ surface before dissociating. This adsorbed precursor state is essential for the subsequent fluorination reaction that converts surface Al–O bonds to Al–F bonds, enabling the etching mechanism.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, While the self-limiting mechanism is confirmed, selectivity depends on the relative reactivity of HF/TMA with Al₂O₃ versus SiO₂. The spectra alone don't prove selectivity; a separate experiment comparing etch rates on both materials is required to guarantee selective removal.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After the TMA exposure, an increase in absorbance is observed at ∼2900 and 2950 cm−1 .\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After TMA exposure, n increase in absorbance is observed at ∼2900 and 2950 cm−1, this absorbance gain is in accord with the formation of AlF2(CH3)* or −OAl(CH3)2* species . After the HF exposure, an absorbance decrease at ∼2900 and ∼2950 cm−1 is consistent with the removal of the previously added AlCH3* species\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At about 2900 and 2950 cm^-1.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"AlCH3* surface species, consistent with the formation of AlF2(CH3)* or -OAl(CH3)2*.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The absorbance at those wavenumbers decreases, indicating the removal of AlCH3* surface species.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF removes methyl (–CH₃) species from the surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA adds methyl (–CH₃) groups to the surface\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectra at 300 °C point to an ALE-like regime rather than AlF₃ ALD. The spectra indicate no clear change in the ν(HF) region. If HF surface species are required intermediates for ALD, then the lack of a clear HF-related band suggests those HF species are not persisting on the surface, and the ALD pathway is not favored at this temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"CH₃ doesn't accumulate over repeated cycles, based on the magnitude of the absorbance during each half-cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"~2950cm^-1, ~3200cm^-1, ~3600cm^-1\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TMA spectrum shows a small positive peak at this position, consistent with CH3 stretching from methyl groups bonded to the surface. In contrast, the HF spectrum displays a negative feature at the same location, indicating removal or changeof these groups. This opposite behavior shows the different surface chemistry caused by the two exposures.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The absorbance at ~2900 cm⁻¹ and ~2950 cm⁻¹ decreases after HF exposure, indicating removal of AlCH₃* species.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Symmetric stretching of AlCH₃ (~2900 cm⁻¹), Asymmetric stretching of AlCH₃ (~2950 cm⁻¹), Absence of HF vibrational features between ~3000–3675 cm⁻¹\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increase in absorbance at ~2900 and 2950 cm⁻¹ after TMA exposure and their subsequent removal after HF exposure demonstrate that the ALE process is effectively forming and removing AlCH₃* surface species. The absence of HF* features in this region indicates that at 300 °C, HF desorbs efficiently, enabling TMA to react with the underlying AlF₃ layer and produce controlled etching of Al₂O₃. These trends confirm the self-limiting nature and effectiveness of the ALE process under the described conditions.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":655,"height":580}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_12.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multi spectra chart","caption_source":"content.json:img_caption"},"width":655,"height":580,"image_format":"jpeg","image_sha256":"d91ef7fcdae09c5b369aac167deb329f805abc5fb333cf480c618227a5f8e4e8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/multiple-line-chart/test/metadata.jsonl b/subsets/multiple-line-chart/test/metadata.jsonl index 6409f8ef78e3e055bb1e3ac1ebd6b5577f4302aa..20e63179f89ac5cc8bbc2a1f170fe4dbe77f58dd 100644 --- a/subsets/multiple-line-chart/test/metadata.jsonl +++ b/subsets/multiple-line-chart/test/metadata.jsonl @@ -1,69 +1,69 @@ -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_13.jpg","caption":"FIG. 13. (Color online) Results from Monte Carlo simulations investigating the influence of surface recombination of radicals during plasma-assisted ALD (Ref. 304). (a) Equivalent thickness profile in a trench of aspect ratio 10 for different deposition regimes, obtained for various combinations of values for the sticking probability, $s$ , and surface recombination probability, $r$ . The positions within the trench labeled 0 and $100\\%$ correspond to the trench opening and trench bottom, respectively. Note that both recombination-limited cases show almost perfect overlap. (b) The dose required to reach saturation in trenches with aspect ratios of 10 and 30 for nonzero values of $r$ . This dose is normalized to the dose required to reach saturation in these trenches when $r = 0$ . For the simulations $s = 0.01$ was assumed. From H.C.M. Knoops et al., J. Electrochem. Soc. 157, G241 (2010). Reproduced with permission of ECS—The Electrochemical Society.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_13","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_13","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_13.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":689,"height":1033,"image_format":"jpeg","image_sha256":"b6751d4682ee73e5c954d57032cb22cc25c9ad21eeb17b4363db8c865e9080ac","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":17,"y":14,"width":670,"height":508},{"panel_id":"b","x":5,"y":556,"width":682,"height":472}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Thickness profiles across a trench reveal how different growth regimes—reaction-limited, diffusion-limited, and recombination-limited—affect uniformity, with recombination-limited cases showing more variation along the depth.\"},{\"panel_id\":\"b\",\"text\":\"The dose necessary for saturation increases with higher surface recombination probability, and this effect becomes more pronounced at higher aspect ratios (AR = 30).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Distance into Trench (%) | Reaction-limited (s = 0.01; r = 0) | Diffusion-limited (s = 1; r = 0) | Recombination-limited (s = 0.01; r = 0.9) | Recombination-limited (s = 1; r = 0.9) |\\n|--------------------------|------------------------------------|----------------------------------|-------------------------------------------|----------------------------------------|\\n| 0 | 100 | 100 | 100 | 100 | \\n| 20 | 98 | 100 | 95 | 97 |\\n| 40 | 95 | 99 | 90 | 93 |\\n| 60 | 92 | 98 | 88 | 91 |\\n| 80 | 90 | 98 | 86 | 90 |\\n| 100 | 92 | 99 | 88 | 92 |\"},{\"panel_id\":\"b\",\"text\":\"| Surface Recombination Probability (r) | Dose Necessary for Saturation (Aspect Ratio = 10) | Dose Necessary for Saturation (Aspect Ratio = 30) |\\n|---------------------------------------|---------------------------------------------------|---------------------------------------------------|\\n| 0.00 | 1 | 1 |\\n| 0.05 | 3 | 10 |\\n| 0.10 | 6 | 25 |\\n| 0.15 | 10 | 50 |\\n| 0.20 | 20 | 70 |\\n| 0.25 | 40 | 85 | \\n| 0.30 | 60 | 100 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Surface recombination probability (r), Aspect ratio of the structure\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Thickness remains nearly uniform for diffusion-limited and reaction-limited processes but decreases notably deeper into the trench for recombination-limited conditions, indicating non-uniform film growth.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Film thickness (%) as a function of trench depth.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_14.jpg","caption":"FIG. 14. (Color online) Experiments proving that VUV radiation from the plasma affects the surface passivation of crystalline Si by $\\mathrm{Al}_2\\mathrm{O}_3$ when deposited by plasma-assisted ALD (Refs. 43, 303). After annealing, the wafers were exposed to an $\\mathrm{O_2}$ plasma for various exposure times. (a) The effective charge carrier lifetimes degraded for increasing exposure times at a rate which increased with increasing VUV radiation present in the plasma (higher intensity for higher power and/or lower pressure). (b) Results are also given for the situation in which the substrate is covered by quartz and $\\mathrm{MgF_2}$ windows that respectively block and do not block the VUV photons of $9.5\\mathrm{eV}$ . From H.B. Profijt et al., ECS Trans. 33, 61 (2010). Reproduced with permission of ECS—The Electrochemical Society.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_14","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_14","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_14.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":678,"height":978,"image_format":"jpeg","image_sha256":"eae3238a3e3999c1efb9ceab9a2c05ea03521258070446004a7458a8396d7b2d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":42,"y":11,"width":632,"height":462},{"panel_id":"b","x":40,"y":511,"width":636,"height":466}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Increasing plasma power accelerates carrier lifetime reduction, with 500 W exposure causing rapid degradation compared to 100 W.\"},{\"panel_id\":\"b\",\"text\":\"The use of different chamber windows (no window, quartz, MgF₂) alters the plasma interaction with the surface, showing that optical transparency and window material strongly influence degradation rates.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| O₂ Plasma Exposure Time (s) | 100 W, 7.5 mTorr | 500 W, 7.5 mTorr | 100 W, 7.5 mTorr (quartz window) |\\n|----------------------------|------------------|------------------|----------------------------------|\\n| 0 | 10.0 | 9.8 | 10.0 |\\n| 25 | 6.5 | 4.5 | 9.5 |\\n| 50 | 2.0 | 1.0 | 9.0 |\\n| 75 | 0.9 | 0.6 | 8.5 |\\n| 100 | 0.5 | 0.3 | 8.0 |\\n| 125 | 0.3 | 0.2 | 7.5 |\\n| 150 | 0.2 | 0.1 | 7.0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Effective carrier lifetime (ms).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The effective carrier lifetime decreases exponentially with increasing O₂ plasma exposure time, with higher plasma power or direct exposure (no window) causing faster degradation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Plasma power (100 W and 500 W), Pressure (7.5 mTorr), Window material (none, quartz, MgF₂)\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_16.jpg","caption":"FIG. 16. Barrier failure temperatures for TaN and Ta films deposited by PVD and plasma-assisted ALD (Refs. 204, 219). After deposition the TaN and Ta layers were capped by $200 \\mathrm{nm}$ thick Cu films using the PVD technique. Barrier failure temperatures were determined by monitoring the disappearance of the Cu (111) peak by X-ray diffraction measurements. The ALD films were deposited using an $\\mathrm{H}_2 / \\mathrm{N}_2$ plasma film in TaN and an $\\mathrm{H}_2$ plasma for Ta. From H. Kim et al., J. Appl. Phys. 95, 5848 (2004). Reprinted with permission. Copyright 2004, American Institute of Physics.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_16","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_16","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_16.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":605,"height":447,"image_format":"jpeg","image_sha256":"7f5f55ebe1f0d3ac33f9b16ea3ace68c7acdad2c5c0a37f2a80fbe87e5cb4d3f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":605,"height":447}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows how the failure temperature increases with film thickness for PE-ALD and PVD TaN and Ta films. Across all materials, thicker films withstand higher temperatures, with ALD-based films generally exhibiting higher thermal stability than their PVD counterparts.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Film thickness (nm) | PE-ALD TaN | PVD TaN | PE-ALD Ta | PVD Ta |\\n|---|---|---|---|---|\\n| 0 | 580 | 590 | 600 | 610 |\\n| 5 | 670 | 680 | 690 | 700 |\\n| 10 | 760 | 770 | 780 | 790 |\\n| 15 | 850 | 860 | 870 | 880 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Failure temperature increases with film thickness for all materials, with PE-ALD films exhibiting higher stability compared to PVD films across the measured range.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Failure temperature (°C).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"(PE-ALD) TaN, (PVD), TaN\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_4.jpg","caption":"Fig. 4. (Color online) Ion energy distribution as measured by a retarding field energy analyzer (RFEA) in $\\mathrm{O}_2$ , $\\mathrm{H}_2$ and $\\mathrm{N}_2$ plasmas (operating pressure: 8 mTorr; plasma power: 100 W) used for remote plasma-assisted ALD. The RFEA was positioned at the substrate stage. Measurements were performed in the home-built ALD-I reactor installed at Eindhoven University of Technology. Due to non-ideal effects such as capacitive coupling, the ion energies measured are higher than those measured in the Oxford Instruments FlexAL reactor, which are reported elsewhere (Ref. 303).","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_4","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":606,"height":472,"image_format":"jpeg","image_sha256":"33337cd6ce6b8f9ae4de2c78e45af55d0edd55f8d5cca3d0514b4dc0fd8d464a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":606,"height":472}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents ion energy distribution curves for O₂, H₂, and N₂ plasmas. Each plasma type exhibits a peak in ion energy distribution near 30–35 eV, with the H₂ plasma showing the highest intensity, O₂ plasma a moderate peak, and N₂ plasma the lowest distribution. This comparison highlights differences in ion energetics between the three plasma environments.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion Energy (eV) | O₂ Plasma (a.u.) | H₂ Plasma (a.u.) | N₂ Plasma (a.u.) |\\n|-----------------|------------------|------------------|------------------|\\n| 0 | 0.00 | 0.00 | 0.00 |\\n| 10 | 0.05 | 0.10 | 0.00 |\\n| 20 | 0.30 | 0.40 | 0.10 |\\n| 25 | 0.60 | 0.80 | 0.20 |\\n| 30 | 0.90 | 1.00 | 0.30 |\\n| 35 | 0.80 | 0.70 | 0.20 |\\n| 40 | 0.20 | 0.20 | 0.10 |\\n| 50 | 0.00 | 0.00 | 0.00 |\\n| 60 | 0.00 | 0.00 | 0.00 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The H₂ plasma shows the highest ion energy distribution peak around 30–35 eV, followed by O₂ plasma with a moderate peak and N₂ plasma with the lowest intensity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ion energy distribution (arbitrary units.)\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"H₂ plasma high energy, O₂ moderate, N₂ low energy and ion impact\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_8.jpg","caption":"FiG. 8. (Color online) Growth per cycle of $\\mathrm{Al}_2\\mathrm{O}_3$ films as a function of the substrate temperature. The films were deposited by plasma-assisted ALD ( $\\mathrm{O}_2$ plasma) and thermal ALD ( $\\mathrm{H}_2\\mathrm{O}$ ). Two different ALD reactors were used; one operating at $15\\mathrm{mTorr}$ and the other at $170\\mathrm{mTorr}$ (Refs. 43, 323). From S.E. Potts et al., J. Electrochem. Soc. 157, P66 (2010). Reproduced by permission of ECS—The Electrochemical Society.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_8","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":675,"height":520,"image_format":"jpeg","image_sha256":"7fa62c00a7f742804a3143a2cd7c472f3775129593bd67d3726da42f1e5b382f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":520}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart compares growth per cycle as a function of deposition temperature for both O₂ plasma and thermal (H₂O) ALD processes under two pressure conditions (15 mTorr and 170 mTorr). Growth per cycle decreases with temperature for plasma processes, while remaining nearly constant for thermal ALD. Higher pressure generally results in slightly higher growth rates.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition Temperature (°C) | O₂ Plasma (170 mTorr) | O₂ Plasma (15 mTorr) | Thermal (H₂O, 170 mTorr) | Thermal (H₂O, 15 mTorr) |\\n|-----------------------------|----------------------|----------------------|---------------------------|--------------------------|\\n| 50 | 1.7 | 1.6 | 0.8 | 0.7 |\\n| 100 | 1.6 | 1.5 | 0.8 | 0.8 |\\n| 150 | 1.4 | 1.3 | 0.9 | 0.9 |\\n| 200 | 1.2 | 1.1 | 0.9 | 0.9 |\\n| 250 | 1.1 | 1.0 | 0.9 | 0.9 |\\n| 300 | 1.0 | 0.9 | 0.9 | 0.9 |\\n| 350 | 0.9 | 0.8 | 0.9 | 0.9 |\\n| 400 | 0.8 | 0.7 | 0.9 | 0.9 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The growth per cycle decreases with temperature for O₂ plasma ALD but remains almost constant for thermal (H₂O) ALD, indicating that plasma-based processes are more temperature-sensitive.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"O₂ plasma 170 mTorr, O₂ plasma 15 mTorr, H₂O thermal 170 mTorr, H₂O thermal 15 mTorr\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Growth per cycle (Å/cycle).\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_9.jpg","caption":"FiG. 9. (Color online) Growth per cycle of $\\mathrm{TiO}_2$ films as a function of the substrate temperature. Plasma-assisted ALD was carried out using $\\mathrm{Ti(O^iPr)_4}$ , $\\mathrm{Ti(Cp^Me)(O^iPr)_3}$ , $\\mathrm{Ti(Cp^*)OMe)_3}$ , and $\\mathrm{Ti(Cp^Me)(NMe_2)_3}$ as precursors in combination with an $\\mathrm{O}_2$ plasma (Refs. 56, 248). Data for thermal ALD with $\\mathrm{H}_2\\mathrm{O}$ (Ref. 325) and $\\mathrm{O}_3$ (Ref. 324) using the widely employed $\\mathrm{Ti(O^iPr)_4}$ precursor are given for comparison. From S.E. Potts et al., J. Electrochem. Soc. 157, P66 (2010). Reproduced by permission of ECS—The Electrochemical Society.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_9","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_9","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":681,"height":525,"image_format":"jpeg","image_sha256":"89831d0049dc299f6c32ec14efd020630b262814d55c708174cde431e3c5350a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":681,"height":525}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart compares growth per cycle for several titanium precursors under both plasma and thermal ALD conditions. Plasma ALD processes, using precursors such as Ti(OPr)₄ and Ti(Cp*) derivatives, maintain higher and more stable growth rates across all temperatures, while thermal ALD processes show minimal growth and stronger temperature dependence.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition Temperature (°C) | Ti(OPr)₄ (Plasma) | Ti(Cp*)Y(OPr)₄ (Plasma) | Ti(Cp*)Y(OMe)₄ (Plasma) | Ti(Cp*)X(NMe₂)₃ (Plasma) | Ti(OPr)₄ + H₂O (Thermal) | Ti(OPr)₄ + O₃ (Thermal) |\\n|-----------------------------|-------------------|--------------------------|--------------------------|---------------------------|---------------------------|--------------------------|\\n| 50 | 0.65 | 0.72 | 0.68 | 1.10 | 0.05 | 0.12 |\\n| 100 | 0.64 | 0.70 | 0.67 | 1.08 | 0.04 | 0.11 |\\n| 150 | 0.63 | 0.68 | 0.65 | 1.07 | 0.03 | 0.10 |\\n| 200 | 0.62 | 0.67 | 0.64 | 1.05 | 0.03 | 0.09 |\\n| 250 | 0.62 | 0.67 | 0.64 | 1.04 | 0.03 | 0.09 |\\n| 300 | 0.61 | 0.66 | 0.63 | 1.04 | 0.02 | 0.08 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Plasma ALD shows consistently higher and more stable growth per cycle across all deposition temperatures, while thermal ALD yields lower growth rates that decline further with temperature.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Deposition temperature.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ti(OPr)₄ plasma, Ti(Cp*)Y(OPr)₄ plasma, Ti(Cp*)Y(OMe)₄ plasma, Ti(Cp*)X(NMe₂)₃ plasma, Ti(OPr)₄ + H₂O thermal, Ti(OPr)₄ + O₃ thermal.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_15_fig_2.jpg","caption":"FIG. 2. Normalized capacitance of BST films grown on $\\mathrm{MgO}$ $\\mathrm{TiO_2 / Si}$ and $\\mathrm{Ta}_2\\mathrm{O}_5 / \\mathrm{Si}$ substrates.","id":"test/atomic-layer-deposition/experimental-usecase/15/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/15/fig_2","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/Il-Doo Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":572,"height":567,"image_format":"jpeg","image_sha256":"1d59fc6a4a86573f6a7b9735ad1cdc0fe0f248b22080cd2ed01684bf61358273","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":572,"height":566}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the normalized capacitance of BST films with different dielectric layers (BST/TiO2/Si, BST/Ta2O5/Si, BST/MgO) as a function of applied voltage. The tunability of capacitance is indicated at specific voltages.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Applied Voltage (V) | Normalized Capacitance |\\n|---------------------|------------------------|\\n| 0 | 1.0 |\\n| 5 | 0.7 |\\n| 10 | 0.4 |\\n| 35 | 0.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At an applied voltage of 10 V, the tunability values of BST films grown on Ta2O5/Si and TiO2 /Si were 53.1% and 72.9%, respectively and 20.7% for films on MgO single crystal substrate.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Improved tunability and, thus, higher frequency tuning agility, is possible with TiO2 or Ta2O5 buffer layers which increase the overall average dielectric constant and thereby minimize electric field attenuation\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"BST films grown on MgO single crystal substrates showed highly (100) preferred orientation and reached a tunability of only 41.6% with a much higher applied voltage of 35 V. The measured\\ncapacitance of BST grown on TiO2/Si,Ta2O5 / Si, and MgO substrates at zero bias voltage was 125.8, 30.8, and 9.95 pF, respectively. In comparison to parallel-plate capacitors, coplanar designs generally require higher control voltages and\\noffer lower tunability, potential disadvantages of the IDC structure. The drive voltage needed to obtain appropriate tunability is very high in the BST/MgO structure given the low dielectric constant of the MgO single crystal substrate\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_19_fig1.jpg","caption":"Fig.1 Deposition rate of $\\mathrm{ZrO_2}$ thin films from the $(\\mathrm{CpMe})_2\\mathrm{Zr(OMe)Me}$ and $(\\mathrm{CpMe})_2\\mathrm{ZrMe}_2$ precursors and ozone as function of the deposition temperature. Pulsing times were $1.0$ and $2.0~\\mathrm{s}$ for the $\\mathrm{Zr}$ precursor and $\\mathrm{O}_3$ respectively. Lines are guides to the eye.","id":"test/atomic-layer-deposition/experimental-usecase/19/fig1","sample_id":"atomic-layer-deposition/experimental-usecase/19/fig1","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/Jaakko Niinisto et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":422,"height":350,"image_format":"jpeg","image_sha256":"19570d36026756cad3bafec249f9b2bbdf172a421a9a183404c5416b86bd203f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":419,"height":346}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart shows the deposition rate (Å/cycle) of Zirconia (ZrO₂ ) thin films from two different zirconium precursors—(CpMe)₂Zr(OMe)Me and (CpMe)₂ZrMe₂—using O₃ as the oxidant, plotted against deposition temperature (250–500 °C). The growth rate seems to increase with increase in temperature and the behaviours are slightly different for the two precursors.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition Temperature (°C) | Growth Rate (Å/cycle) | Process |\\n|-----------------------------|------------------------|-----------------------------|\\n| 250 | 0.24 | (CpMe)₂Zr(OMe)Me / O₃ |\\n| 250 | 0.21 | (CpMe)₂ZrMe₂ / O₃ |\\n| 300 | 0.56 | (CpMe)₂Zr(OMe)Me / O₃ |\\n| 300 | 0.52 | (CpMe)₂ZrMe₂ / O₃ |\\n| 350 | 0.64 | (CpMe)₂Zr(OMe)Me / O₃ |\\n| 350 | 0.56 | (CpMe)₂ZrMe₂ / O₃ |\\n| 400 | 0.75 | (CpMe)₂Zr(OMe)Me / O₃ |\\n| 400 | 0.58 | (CpMe)₂ZrMe₂ / O₃ |\\n| 450 | 0.88 | (CpMe)₂Zr(OMe)Me / O₃ |\\n| 450 | 0.71 | (CpMe)₂ZrMe₂ / O₃ |\\n| 500 | 1.10 | (CpMe)₂Zr(OMe)Me / O₃ |\\n| 500 | — | (CpMe)₂ZrMe₂ / O₃ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Precursors Used:\\n\\n(CpMe)₂Zr(OMe)Me\\n\\n(CpMe)₂ZrMe₂\\n\\n2. Experimental Conditions for One ALD Cycle:\\n\\nZr Precursor Pulse Time: 1.0 s\\n\\nO₃ (Oxidant) Pulse Time: 2.0 s\\n\\nDeposition Temperature Range: 250–500 °C\\n\\nOxidant: O₃ (Ozone)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"(CpMe)₂Zr(OMe)Me provides a stable, low deposition rate (~0.5 Å/cycle) from 250–400 °C, while (CpMe)₂ZrMe₂ only achieves a stable rate above 350 °C. The balance is between low-temperature capability and growth rate. Choosing the (OMe)Me precursor enables processing below 350 °C, but at the cost of a roughly 2x slower growth rate compared to the Me₂ precursor at its optimal temperature.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It reduces the deposition rate by approximately half (from ~1.0 Å/cycle to ~0.5 Å/cycle).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The (CpMe)₂Zr(OMe)Me precursor must be used, as it shows a stable rate at 300 °C. The consequence is a slower growth rate, which will increase the total deposition time per wafer to achieve the target film thickness. This reduces tool throughput and increases the cost of the manufacturing step.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_19_fig2.jpg","caption":"Fig.2 Deposition rate of $\\mathrm{ZrO_2}$ thin films grown from $(\\mathrm{CpMe})_2\\mathrm{Zr(OMe)Me}$ and $(\\mathrm{CpMe})_2\\mathrm{ZrMe}_2$ as function of the $\\mathrm{Zr}$ precursor pulse length at the substrate temperatures indicated. Pulsing time was $2.0~\\mathrm{s}$ for $\\mathrm{O}_3$ . Lines are guides to the eye.","id":"test/atomic-layer-deposition/experimental-usecase/19/fig2","sample_id":"atomic-layer-deposition/experimental-usecase/19/fig2","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/Jaakko Niinisto et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":475,"height":358,"image_format":"jpeg","image_sha256":"7523d44a3e1cd01d01e4aa3cb1bce322ab89f98d891775ff2c91745cb128db25","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":475,"height":352}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple chart shows how the growth rate of ZrO₂ thin films changes with zirconium precursor pulse length for two precursors—(CpMe)₂Zr(OMe)Me and (CpMe)₂ZrMe₂—using O₃ as the oxidant. Measurements were taken at 400 °C and 350 °C. As the pulse length increases, the growth rate approaches saturation, but the two precursors show slightly different saturation behaviors. The O₃ pulse time was fixed at 2.0 s.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Zr Precursor Pulse Length (s) | Growth Rate (Å/cycle) | Process |\\n|-------------------------------|------------------------|-----------------------------------------------|\\n| 0.5 | — | (CpMe)₂Zr(OMe)Me / O₃ at 400°C |\\n| 0.5 | — | (CpMe)₂Zr(OMe)Me / O₃ at 350°C |\\n| 0.5 | — | (CpMe)₂ZrMe₂ / O₃ at 350°C |\\n| 1.0 | 0.72 | (CpMe)₂Zr(OMe)Me / O₃ at 400°C |\\n| 1.0 | 0.60 | (CpMe)₂Zr(OMe)Me / O₃ at 350°C |\\n| 1.0 | 0.52 | (CpMe)₂ZrMe₂ / O₃ at 350°C |\\n| 1.5 | 0.72 | (CpMe)₂Zr(OMe)Me / O₃ at 400°C |\\n| 1.5 | 0.62 | (CpMe)₂Zr(OMe)Me / O₃ at 350°C |\\n| 1.5 | — | (CpMe)₂ZrMe₂ / O₃ at 350°C |\\n| 2.0 | 0.75 | (CpMe)₂Zr(OMe)Me / O₃ at 400°C |\\n| 2.0 | 0.65 | (CpMe)₂Zr(OMe)Me / O₃ at 350°C |\\n| 2.0 | 0.56 | (CpMe)₂ZrMe₂ / O₃ at 350°C |\\n| 2.5 | 0.75 | (CpMe)₂Zr(OMe)Me / O₃ at 400°C |\\n| 2.5 | 0.65 | (CpMe)₂Zr(OMe)Me / O₃ at 350°C |\\n| 2.5 | — | (CpMe)₂ZrMe₂ / O₃ at 350°C |\\n| 3.0 | — | (CpMe)₂Zr(OMe)Me / O₃ at 400°C |\\n| 3.0 | 0.66 | (CpMe)₂Zr(OMe)Me / O₃ at 350°C |\\n| 3.0 | 0.55 | (CpMe)₂ZrMe₂ / O₃ at 350°C |\\n| 3.5 | — | (CpMe)₂Zr(OMe)Me / O₃ at 400°C |\\n| 3.5 | — | (CpMe)₂Zr(OMe)Me / O₃ at 350°C |\\n| 3.5 | — | (CpMe)₂ZrMe₂ / O₃ at 350°C |\\n| 30 | — | (CpMe)₂Zr(OMe)Me / O₃ at 400°C |\\n| 30 | 0.62 | (CpMe)₂Zr(OMe)Me / O₃ at 350°C |\\n| 30 | 0.52 | (CpMe)₂ZrMe₂ / O₃ at 350°C |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Variable Zr precursor pulse (x s)\\n\\n, Purge\\n\\n, Fixed O₃ pulse (2.0 s)\\n\\n, Purge\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The (CpMe)₂Zr(OMe)Me precursor at 400°C reaches saturation with a shorter pulse length (~1.5 s) than the (CpMe)₂ZrMe₂ precursor at 350°C, which requires a longer pulse (~2.5 s) to saturate. This indicates the (OMe)Me precursor reacts and saturates the surface more rapidly at a higher temperature, while the Me₂ precursor has slower surface reaction kinetics at 350°C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Replacing one -OMe ligand with a second -Me ligand.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"(CpMe)₂Zr(OMe)Me at 350°C is preferable. It shows a clear, achievable saturation plateau at this temperature, ensuring self-limiting growth for uniformity. Using the Me₂ precursor at 350°C would require a longer, harder-to-control pulse to reach saturation, risking incomplete reactions and less uniform films.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_19_fig_7.jpg","caption":"Fig. 7 Current density-voltage (a) and Poole-Frenkel (b) plots of the current-voltage dependences measured on some representative $\\mathrm{ZrO_2}$ films deposited from precursors indicated by labels. Layer thicknesses are also given in the labels.","id":"test/atomic-layer-deposition/experimental-usecase/19/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/19/fig_7","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/Jaakko Niinisto et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":514,"height":781,"image_format":"jpeg","image_sha256":"1a79f653c114dec6ff9881b9d460a0c98ca30e5621b8c616767536e2457dfcfc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":515,"height":382},{"panel_id":"b","x":5,"y":395,"width":505,"height":382}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The muliple line chart shows Current Density-Voltage (J-V) plots for ZrO₂ films of varying thickness (3.6–13.1 nm) deposited from two different precursors. The analysis identifies dominant leakage current mechanisms: Schottky emission (interface-limited) at lower fields.\"},{\"panel_id\":\"b\",\"text\":\"The muliple line chart shows Poole-Frenkel plots for ZrO₂ films of varying thickness (3.6–13.1 nm) deposited from two different precursors. The analysis identifies dominant leakage current mechanisms: Poole-Frenkel emission (bulk trap-limited) at higher fields.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Voltage, V | Current density, A/cm² |\\n|---|---|\\n| 0 | 10^-9 |\\n| 1 | 10^-8 |\\n| 2 | 10^-7 |\\n| 3 | 10^-6 |\\n| 4 | 10^-5 |\\n| 5 | 10^-4 |\\n| 6 | 10^-3 |\\n| 7 | 10^-2 |\\n| 8 | 10^-1 |\"},{\"panel_id\":\"b\",\"text\":\"| E^(1/2), (MV/cm)^(1/2) | ln(J/E) |\\n|---|---|\\n| 0.0 | -20 |\\n| 0.5 | -15 |\\n| 1.0 | -10 |\\n| 1.5 | -5 |\\n| 2.0 | 0 |\\n| 2.5 | 5 |\\n| 3.0 | 10 |\\n| 3.5 | 15 |\\n| 4.0 | 20 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Deposit a top electrode (like Al/Ag/Au) to form a capacitor.\\n\\nApply a series of increasing voltage biases to the capacitor.\\n\\nMeasure the resulting current flowing through the film at each applied voltage.\\nThe final critical step is measuring the current, which directly gives the leakage density (J) for that specific voltage (V), allowing the trace to be plotted.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"(CpMe)₂Zr(OMe)Me (3.9 nm): Pro: Lower leakage current (~10⁻⁷ A/cm² at 2V).\\n\\n(CpMe)₂ZrMe₂ (3.6 nm): Con: Higher leakage current (~10⁻⁴ A/cm² at 2V).\\n\\n(CpMe)₂Zr(OMe)Me precursor is better for low leakage.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The slope is proportional to the square root of the trap's dynamic dielectric constant and its energy depth. A steeper slope (like for the (CpMe)₂ZrMe₂ film) suggests a lower dynamic dielectric constant or different trap energetics. The OMe ligand in the (CpMe)₂Zr(OMe)Me precursor may incorporate oxygen differently, potentially passivating defects or creating a distinct trap distribution with a shallower effective energy level, leading to its different slope.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies that in thin films (3.9 nm), the dominant leakage mechanism shifts from bulk trap-assisted (Poole-Frenkel) to a different mechanism, most likely direct tunneling. Tunneling current is thickness-sensitive and can be high and unpredictable.For a capacitor requiring long-term charge retention, this makes very thin ZrO₂ films unreliable, as charge will leak rapidly via tunneling, regardless of improvements to bulk film quality.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_20_fig_1.jpg","caption":"Fig. 1 Composition of deposited films versus percentage of titanium oxide sub-cycles. Experimental data are compared with a model based on surface utilization10 and the growth rates of the individual binary oxides.","id":"test/atomic-layer-deposition/experimental-usecase/20/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/20/fig_1","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/Titta Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":539,"height":420,"image_format":"jpeg","image_sha256":"bc15b6f488357c14e4e67e6c1a9c3da40655699508782b8d7f65b558bee56eb9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":539,"height":420}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the titanium concentration (at.% relative to total metal content) as a function of TiO₂ subcycles (%). It compares experimental data with theoretical values from a surface utilization model with calculated values from individual growth rates. The surface utilization model better predicts experimental values.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TiO₂ subcycles (%) | Titanium concentration (at.%): Experimental data | Titanium concentration (at.%): from surface utilization model | Titanium concentration (at.%): calculated from individual growth rates |\\n|---|---|---|---|\\n| 0.0 | 0.0 | 0.0 | 0.0 |\\n| 5.8 | 47.2 | 25.3 | 13.5 |\\n| 10.9 | 58.1 | 40.3 | 23.3 |\\n| 13.8 | 62.5 | 47.4 | 29.0 |\\n| 17.0 | 62.4 | 52.8 | 32.9 |\\n| 19.8 | 63.0 | 57.7 | 37.7 |\\n| 25.0 | 68.7 | 64.6 | 45.3 |\\n| 29.8 | 77.5 | 70.3 | 51.0 |\\n| 32.8 | 76.5 | 73.2 | 54.5 |\\n| 50.2 | 84.6 | 84.5 | 71.2 |\\n| 67.2 | 93.5 | 92.0 | 83.3 |\\n| 75.2 | 94.2 | 94.5 | 88.3 |\\n| 100 | 100 | 100 | 100 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Surface utilization model.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The calculations generally underestimate the experimental values.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approx. 5-6%.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All three datasets intersect at 100% TiO₂ subcycles, which corresponds to 100 at.% Ti. It is physically necessary for all methods to reach this value because at 100% subcycles, the deposition consists exclusively of titanium precursor pulses. Therefore, the resulting film is pure titanium oxide, physically forcing the cation composition to be 100% titanium.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_20_fig_3.jpg","caption":"Fig. 3 Growth per cycle as a function of the percentage of $\\mathrm{TiO_2}$ subcycles.","id":"test/atomic-layer-deposition/experimental-usecase/20/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/20/fig_3","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/Titta Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":514,"height":375,"image_format":"jpeg","image_sha256":"26e61de4d3234cb771152ae745529ac154387120e1198ab187b56d5b1eb461d1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":514,"height":375}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the growth per cycle (Å/cycle) as a function of the percentage of TiO₂ subcycles. It compares theoretical values derived from the individual growth rates (open circles) with experimental values calculated from film thicknesses measured by X-ray Reflectivity (solid squares). Experimental growth rates are consistently lower than the prediction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TiO₂ subcycles (%) | Growth per cycle (Å/cycle): calculated from individual growth rates | Growth per cycle (Å/cycle): calculated from XRR thickness |\\n|---|---|---|\\n| 0 | 0.280 | 0.280 |\\n| 6 | 0.293 | 0.250 |\\n| 12 | 0.306 | 0.178 |\\n| 14 | 0.313 | 0.180 |\\n| 18 | 0.320 | 0.239 |\\n| 20 | 0.326 | 0.260 |\\n| 25 | 0.338 | 0.278 |\\n| 33 | 0.357 | 0.239 |\\n| 50 | 0.399 | 0.300 |\\n| 67 | 0.440 | 0.359 |\\n| 75 | 0.459 | 0.379 |\\n| 100 | 0.519 | 0.519 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approx. 0.519 Å/cycle (100% TiO₂ subcycles).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approx. 0.28 Å/cycle (0% TiO₂ subcycles).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Theoretical values overestimate the experimental ones (derived from XRR measurement).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Theoretical values calculated from individual growth rates.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_20_fig_6.jpg","caption":"Fig. 6 SIMS depth profiles of LLT films grown with $\\mathrm{LiO}^{\\prime}\\mathrm{Bu}$ pulse times of 2, 8, and $12\\mathrm{s}$ .","id":"test/atomic-layer-deposition/experimental-usecase/20/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/20/fig_6","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/Titta Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":641,"height":413,"image_format":"jpeg","image_sha256":"e08cf451755efb2bfd1030b25fed1395e6deb95270248a1f74b0faf79c080304","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":641,"height":413}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays SIMS depth profiles showing the distribution of Ti-48, Li-6 and La-138 throughout the thickness of the film in nanometers for films grown with different precursor pulse times (12, 8, 2 s).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Species | Pulse time (s) | Depth (nm) | Intensity (counts/second) |\\n|---|---|---|---|\\n| La-138 | 12 | 2.85 | 240 |\\n| La-138 | 12 | 20.4| 369 |\\n| La-138 | 12 | 95.1| 376 |\\n| La-138 | 12 | 111.45| 779 |\\n| La-138 | 12 | 128.7 | 87 |\\n| La-138 | 8 | 2.85 | 241 | \\n| La-138 | 8 | 18.9 | 362 | \\n| La-138 | 8 | 83.7 |376 | \\n| La-138 | 8 | 96.3 | 867 | \\n| La-138 | 8 | 115.05 | 72 | \\n| La-138 | 2 | 2.85 | 241 | \\n| La-138 | 2 | 18.9 | 362 | \\n| La-138 | 2 | 71.85 | 389 | \\n| La-138 | 2 | 79.8 | 499 | \\n| La-138 | 2 | 95.85 | 71 | \\n| Li-6 | 12 | 0.89 | 3869268 | \\n| Li-6 | 12 | 5.7 | 448809 | \\n| Li-6 | 12 | 91.35 | 490593 | \\n| Li-6 | 12 | 94.95 | 851946 | \\n| Li-6 | 12 | 102.3 | 349796 | \\n| Li-6 | 12 | 108.45 | 481936 | \\n| Li-6 | 12 | 127.2 | 42045 | \\n| Li-6 | 8 | 3.15 | 481936 | \\n| Li-6 | 8 | 79.35 | 481936 | \\n| Li-6 | 8 | 84.75 | 882828 | \\n| Li-6 | 8 | 89.4 | 282508 | \\n| Li-6 | 8 | 95.4 | 481936 | \\n| Li-6 | 8 | 123.15 | 7748 | \\n| Li-6 | 2 | 0.75 | 1402514 | \\n| Li-6 | 2 | 8.25 | 228164 | \\n| Li-6 | 2 | 60.75 | 382362 | \\n| Li-6 | 2 | 68.4 | 675923 | \\n| Li-6 | 2 | 75 | 362475 | \\n| Li-6 | 2 | 123.159 | 7748 | \\n| Li-6 | 2 | 79.2 | 490593 | \\n| Li-6 | 2 | 103 | 14448 | \\n| Ti-48 | 12 | 2.1 | 7215184 |\\n| Ti-48 | 12 | 5.25 | 8933691 |\\n| Ti-48 | 12 | 104.1 | 5931928 |\\n| Ti-48 | 12 | 128.7 | 75659.94 |\\n| Ti-48 | 8 | 2.1 | 8621186 |\\n| Ti-48 | 8 | 4.95 | 9940831 |\\n| Ti-48 | 8 | 90.6 | 4876905 |\\n| Ti-48 | 8 | 123.6 | 8029 |\\n| Ti-48 | 2 | 2.1 |8621186 |\\n| Ti-48 | 2 | 4.95 | 9940831 |\\n| Ti-48 | 2 | 74.55 | 5524183 |\\n| Ti-48 | 2 | 103.95 | 14971 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film grown with 12 s pulse.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The lithium signal curve after 2 s is distinctly lower in intensity compared to the curves at 8 s and 12 s. Since the 2 s curve is below the maximum level, it indicates that the maximum possible amount of lithium has not been incorporated yet.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ti-48, Li-6, La-138\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The signal intensities for all three isotopes drop by orders of magnitude once the depth passes the film thickness (e.g. for >120 nm for the 12s sample). This indicates the substrate is a different material.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_20_fig_7.jpg","caption":"Fig. 7 SIMS depth profiles of lithium, titanium, and lanthanum in the LLT films with one and three $\\mathrm{LiO}^{\\prime}\\mathrm{Bu}+$ water sub-cycles.","id":"test/atomic-layer-deposition/experimental-usecase/20/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/20/fig_7","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/Titta Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":564,"height":458,"image_format":"jpeg","image_sha256":"baadd747ed96f2fd566753604a91666f857d9c944da07bac651816d9dd4a714c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":564,"height":458}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays SIMS depth profiles comparing the intensity at various depths for isotopes of titanium (Ti-48), lithium (Li-6), and lanthanum (La-138) for films grown using one lithium precursor sub-cycle and three lithium sub-cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Species | Number of lithium sub-cycles | Depth (nm) | Intensity (counts/second) |\\n|---|---|---|---|\\n| La-138 | 3 Li sub-cycles | 3 | 272 |\\n| La-138 | 3 Li sub-cycles | 128 | 372 |\\n| La-138 | 3 Li sub-cycles | 134 | 469 |\\n| La-138 | 3 Li sub-cycles | 159 | 165 |\\n| La-138 | 1 Li sub-cycle | 3 | 273 |\\n| La-138 | 1 Li sub-cycle | 84 | 379 |\\n| La-138 | 1 Li sub-cycle | 97 | 925 |\\n| La-138 | 1 Li sub-cycle | 115 | 83 |\\n| Li-6 | 3 Li sub-cycles | 0.6 | 2173095 |\\n| Li-6 | 3 Li sub-cycles | 3.6 | 478382 |\\n| Li-6 | 3 Li sub-cycles | 55 | 527121 |\\n| Li-6 | 3 Li sub-cycles | 78 | 1474142 |\\n| Li-6 | 3 Li sub-cycles | 158 | 158284 |\\n| Li-6 | 1 Li sub-cycle | 0.6 | 2173095 |\\n| Li-6 | 1 Li sub-cycle | 7.4 | 357578 |\\n| Li-6 | 1 Li sub-cycle | 78 | 497312 |\\n| Li-6 | 1 Li sub-cycle | 84 | 823627 |\\n| Li-6 | 1 Li sub-cycle | 90 | 294511 |\\n| Li-6 | 1 Li sub-cycle | 95 | 478382 |\\n| Li-6 | 1 Li sub-cycle | 124 | 7237 |\\n| Ti - 48 | 3 Li sub-cycles | 2.2 | 7097797 |\\n| Ti - 48 | 3 Li sub-cycles | 4.4 | 8130408 |\\n| Ti - 48 | 3 Li sub-cycles | 115 | 5733594 |\\n| Ti - 48 | 3 Li sub-cycles | 151 | 442657 |\\n| Ti - 48 | 3 Li sub-cycles | 1597 | 330874 |\\n| Ti - 48 | 1 Li sub-cycle | 2.2 | 7097797 |\\n| Ti - 48 | 1 Li sub-cycle | 5.2 | 9495724 |\\n| Ti - 48 | 1 Li sub-cycle | 88 | 4909206 |\\n| Ti - 48 | 1 Li sub-cycle | 123 | 7379 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The one grown with 3 lithium sub-cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. Between 60 nm and 120 nm there is a broad surge in intensity. While the upper region (10–60 nm) overlaps with the 1-sub-cycle reference, suggesting normal growth, the massive surge in intensity near the bottom might indicate that excess lithium from the additional pulses migrated and segregated at the interface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film grown with one lithium precursor pulse.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At the interface, as indicated by the surge in intensity at approx. 80 nm.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_21_fig_3.jpg","caption":"Fig. 3 (a) In situ thickness measurements by SE for plasma-assisted ALD of $\\mathrm{Li}_{2}\\mathrm{CO}_{3}$ at 50, 200, 275 and $300^{\\circ}\\mathrm{C}$ and thermal ALD of $\\mathrm{Li}_{2}\\mathrm{CO}_{3}$ at $150^{\\circ}\\mathrm{C}$ . The film growth between 50 and $200^{\\circ}\\mathrm{C}$ with plasma ALD was very similar (see ESI†). (b) Growth per cycle as a function of process table temperature for both plasma-assisted (squares) and thermal (circles) ALD processes.","id":"test/atomic-layer-deposition/experimental-usecase/21/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/21/fig_3","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multi-axis chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/N. Hornsveld et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":603,"height":911,"image_format":"jpeg","image_sha256":"34429e72a439b3254541679fcbbc1b41dc6a7a908fb65564d8648ad2b1f926f5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":11,"y":5,"width":582,"height":453},{"panel_id":"b","x":9,"y":461,"width":594,"height":455}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart plots the thickness of a material as a function of the number of cycles for different thermal and plasma treatments at various temperatures.\"},{\"panel_id\":\"b\",\"text\":\"The chart plots the GPC SE and GPC EBS values against temperature for both thermal and plasma treatments.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | Thermal 150 °C | Plasma 50 °C | Plasma 200 °C | Plasma 275 °C | Plasma 300 °C |\\n|-------------------|-----------------|--------------|---------------|---------------|---------------|\\n| 0 | 0 | 0 | 0 | 0 | 0 |\\n| 100 | 8 | 10 | 15 | 18 | 20 |\\n| 200 | 15 | 18 | 25 | 28 | 30 |\\n| 300 | 22 | 25 | 32 | 36 | 38 |\\n| 400 | 28 | 32 | 38 | 42 | 45 |\\n| 500 | 35 | 38 | 44 | 48 | 50 |\\n| 600 | 42 | 45 | 50 | 54 | 58 |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | GPC SE Thermal (Å) | GPC SE Plasma (Å) | GPC EBS Thermal (Li.at.nm⁻²) | GPC EBS Plasma (Li.at.nm⁻²) |\\n|-------------------|----------------------|---------------------|--------------------------------|--------------------------------|\\n| 50 | 0.3 | 0.8 | - | - |\\n| 100 | 0.6 | 0.8 | - | - |\\n| 150 | 0.5 | 0.8 | 3 | 4 |\\n| 200 | 0.5 | 0.8 | 3 | 4 |\\n| 275 | 0.5 | 0.8 | 3 | 4 |\\n| 300 | 0.5 | 1.6 | 3 | 7 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For plasma-assisted ALD and Tsub 10,14,15,18 Temperatures reported from this work are measured using in situ spectroscopic ellipsometry, while the literature values are the reported set point temperatures. Substrate temperature values from the literature may deviate depending on process conditions and reactors used, as discussed in more detail in the supplementary material. Additional data for thermal ALE processes utilizing alternate reactants are presented in Fig. S3 in the supplementary material.","id":"test/atomic-layer-etching/experimental-usecase/12/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/12/fig_4","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":598,"height":450,"image_format":"jpeg","image_sha256":"8c6d933d6117c56fdd962da8a41bce7235d360674e1d8aae675b600767265eb2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":598,"height":450}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Etch per cycle increases with substrate temperature for all reported thermal ALE chemistries, with the SF₆ plasma/TMA process showing the strongest activation. This work reaches ~1.8 Å/cycle at 200 °C and increases to ~3.5 Å/cycle at 300 °C, exceeding all HF/TMA literature values. The highest reported HF/TMA result (Cano et al.) reaches ~2.5 Å/cycle at 300 °C, while other studies remain at or below ~1 Å/cycle. The comparison highlights a clear performance advantage of plasma-assisted fluorination.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Substrate Temperature (°C) | This work (SF₆/TMA) | Canon HF/TMA | Cheng HF/TMA | Lee HF/TMA | Zyvox HF/TMA |\\n|---|---|---|---|---|---|\\n| 150 | ~0.2 | ~0.0 | ~0.0 | ~0.0 | ~0.0 |\\n| 200 | ~1.2 | ~0.6 | ~0.4 | ~0.3 | ~0.2 |\\n| 250 | ~2.7 | ~1.5 | ~0.9 | ~0.7 | ~0.6 |\\n| 300 | ~3.5 | ~2.2 | ~1.3 | ~1.1 | ~1.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thermal HF/TMA process and SF6 plasma/TMA process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The current work with SF6/TMA.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 275 °C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch per cycle increases as the substrate temperature gets higher.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For increasing temperature, regardless of the chemistry, the EPC increases.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that different types of AlOx are etched. It is known that deposition method of the substrate can have an impact on etch rate.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Zywotko has shown that there is deposition of 0.5 angstrom/cycle at 250 degrees celcius.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"at 250 degrees celcius an etch rate of 3 angstrom/cycle is achieved.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SF₆ plasma/TMA process shows much stronger temperature activation than HF/TMA chemistries. At 250 °C it already matches or exceeds the highest HF/TMA values reported at 300 °C, and at 300 °C it reaches ~3.5 Å/cycle. This indicates that plasma-assisted fluorination produces a more reactive surface for ligand exchange with TMA.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SF₆ plasma/TMA (this work), at ~3.5 Å/cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"SF₆ plasma produces a higher density of reactive fluorinated sites than HF gas exposure. The presence of energetic fluorine species increases fluorine coverage and accessibility at the surface, which enhances the efficiency of TMA-driven ligand exchange. This results in greater material removal per cycle at elevated temperature.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SF₆ plasma ALE process (green squares) exhibits a significantly higher EPC compared to all the thermal HF/TMA processes (dashed lines) across the measured temperature range. For example, at 250 °C, the plasma process achieves an EPC of nearly 3.0 Å/cycle, whereas the thermal processes range from approximately 0.1 to 2.3 Å/cycle. Additionally, the plasma process maintains viable etch rates at lower temperatures where some thermal processes are inactive or show negligible rates.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate acts as a strong function of the substrate temperature, increasing steeply as the temperature rises. The EPC grows from approximately 0.2 Å/cycle at 155 °C to 3.4 Å/cycle at 285 °C. The data point at 140 °C lies slightly below zero, indicating a transition from etching to deposition (ALD mode) at very low temperatures.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A key advantage is the ability to achieve significant etching at lower processing temperatures. The figure shows that the plasma process delivers an etch rate of 0.8 Å/cycle at 185 °C, a temperature where thermal kinetics typically limit the reaction rate for HF-based processes. This makes the plasma variant suitable for substrates that cannot withstand the higher thermal budgets required for efficient thermal ALE.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The transition occurs around 140 °C, as indicated by the data point at 140 °C showing a slightly negative value (net deposition) and the point at 155 °C showing a positive etch rate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SF₆ plasma / TMA: The chemistry utilized in \\\"This work\\\" (Green square trace).\\n\\nThermal HF / TMA: The standard chemistry cited from literature sources (Cano, Hennessy, Lee, Zywotko).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SF₆/TMA process exhibits a significantly higher etch rate compared to the HF/TMA processes. While the HF/TMA data (excluding Cano) generally remains below 1.5 Å/cycle, the SF₆/TMA process rapidly climbs from ~2.0 Å/cycle to >3.0 Å/cycle in this temperature window.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It implies the etch rate is limited by a plasma-driven surface reaction with low activation energy, not by a thermally activated step like precursor decomposition or ligand desorption.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Modern memory chips contain temperature-sensitive materials (e.g., metals, organics) that cannot withstand the >275°C required for thermal HF/TMA etching. The SF₆ plasma/TMA process achieves the necessary etch rate at ~200°C, compatible with these thermal constraints. Furthermore, the wide temperature window (200-300°C) offers robust process control across a wafer, which is critical for the high-aspect-ratio structures in 3D memory.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, depending on the reactor and process conditions used.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In previous work, ALD of AlF3 was observed to proceed in the wide temperature range of 50–300 °C when using a short 10 ms TMA dose.This suggests\\nthat not only the temperature but also exposure to the precursor determines whether deposition or etching occurs.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In comparison to thermal ALE, the plasma ALE process exhibits a higher etch per cycle (EPC) over the entire temperature range investigated\\nhere.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A significant etch rate of 0.8A˚ /cycle was already observed at a relatively low temperature of 185 °C, highlighting one of the benefits of using a plasma process. It is thought that the fluorine radicals provided by the plasma allow for higher etch rates as a thicker fluorinated surface region is formed as compared to when using HF.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3.4 Å.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"140 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The plasma ALE process shows a higher EPC at all temperatures.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TMA exposure dose, which resulted in AlF3 ALD for exposure times of 10 ms.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plot shows that SF₆ plasma/TMA gives the highest EPC at a given substrate temperature compared with the HF/TMA studies. That means you can achieve the same total etch depth at a lower temperature than with HF/TMA. Based on this trend alone, SF₆ plasma/TMA is the better choice for temperature-sensitive substrates.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At approximately 150 °C (EPC crossing 0).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Plasma etching with SF6/TMA.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Cano (HF/TMA): 2.5 Å/cycle, Hennessy (HF/TMA): 1.2 Å/cycle, Lee (HF/TMA): 0.45 Å/cycle\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"EPC increases with substrate temperature for all reported processes. The SF₆ plasma/TMA process shows a steeper increase and higher EPC values compared to thermal HF/TMA processes reported in the literature, particularly above 200 °C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The SF₆ plasma/TMA process reported in this work.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Temperatures in this work are measured in situ, while literature values are reported set points that may vary with reactor design and process conditions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Higher EPC, Stronger T-dependence, Better efficiency vs. thermal ALE\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The plasma-assisted ALE process consistently shows higher EPC than reported thermal HF/TMA processes for the entire temperature range studied.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At low substrate temperatures (~140 °C), the EPC is negative, indicating a transition from etching to deposition, which reflects ALD-like behavior.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Achieves higher etch rates even at relatively low temperatures, Ensures isotropic etching suitable for high aspect ratio 3D trenches, Allows precise control of film removal per cycle through temperature and pulse adjustments\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the substrate temperature increases the EPC. At low temperatures (~140 °C), the EPC is slightly negative, indicating deposition-like behavior typical of ALD. As the temperature rises, the EPC increases steadily, reaching ~3.4 Å/cycle at 285 °C, showing that higher substrate temperatures enhance etching efficiency in the plasma-assisted ALE process.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_12.jpg","caption":"Figure 12. Ion signal intensities versus temperature during $\\mathrm{BCl}_3$ exposure on $\\mathrm{AlF}_3$ powder with a heating rate of $3^{\\circ}\\mathrm{C / min}$ . (a) Boron ligand-exchange species $(\\mathrm{BCl}_2\\mathrm{F}^+$ , $\\mathrm{BClF}_2^+$ and $\\mathrm{BF}_3^+$ ) and $\\mathrm{BCl}_3^+$ reactant. (b) $\\mathrm{AlCl}_3^+$ and $\\mathrm{AlCl}_2^+$ etch products.","id":"test/atomic-layer-etching/experimental-usecase/20/figure_12","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_12","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":661,"height":553,"image_format":"jpeg","image_sha256":"dc461b367b9358d7ebebd8e0bfa9d3461adc3500f80497c4e4f07ab68b8aa8d2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":6,"width":657,"height":244},{"panel_id":"b","x":2,"y":254,"width":656,"height":297}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the intensity of various ions (BCl₃⁺, BCIF₂⁺, BCl₂F⁺, BF₃⁺) as a function of temperature. The intensity decreases for BCl₃⁺ while it increases for BCIF₂⁺, BCl₂F⁺ and BF₃⁺, the latter showing a particularly strong increase.\"},{\"panel_id\":\"b\",\"text\":\"The line chart displays the intensity of AlCl₂⁺ and AlCl₃⁺ as a function of temperature. Both intensities increase with temperature, with AlCl₂⁺ showing a steeper rise than AlCl₃⁺.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | BCl₃⁺ | BCIF₂⁺ | BCl₂F⁺ | BF₃⁺ |\\n|----------------|-------|--------|---------|-------|\\n| 0 | 200 | 40 | 0 | 0 |\\n| 100 | 160 | 40 | 20 | 10 |\\n| 200 | 150 | 40 | 20 | 20 |\\n| 300 | 80 | 100 | 80 | 100 |\\n| 400 | - | - | - | - |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | AlCl₂⁺ | AlCl₃⁺ |\\n|----------------|--------|--------|\\n| 0 | 0 | 0 |\\n| 100 | 0 | 0 |\\n| 200 | 0 | 0 |\\n| 300 | 200 | 80 |\\n| 400 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The boron species originate from ligand-exchange reactions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This is a ligand-exchange reaction that leads to F/Cl transfer and the formation of Cl in the AlF3 powder.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The intensity of both etch products remains constant at 0 mV until 200 °C. After this point, the peak intensity increases for both products.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the subfigure b, the ACl2+ shows a higher peak intensity.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_4.jpg","caption":"Fig. 4. Self-limiting behavior for CoO thermal ALE for long Hacac and $\\mathrm{O_3}$ exposures at $250^{\\circ}C$ Hacac exposure time was varied with $\\mathrm{O_3}$ exposure fixed at $1.0~\\mathrm{s}$ $\\mathrm{O_3}$ exposure time was varied with Hacac exposure fixed at $1.5~\\mathrm{s}$","id":"test/atomic-layer-etching/experimental-usecase/21/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_4","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":664,"height":553,"image_format":"jpeg","image_sha256":"c4af285810dca305c19cdb1e96517046f81d53e4c3336de198787145a30533a6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":660,"height":550}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the etch rate of CoOₓ (Å/cycle) as a function of exposure time to Hacac or O₃ (s) at 250 °C with a 40 s purge. Both curves show an increase in the etch ratio as exposure time increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Hacac or O₃ Exposure Times (s) | Hacac | O3 |\\n| --- | --- | --- |\\n| 0.0 | 0.0 | 0.0 |\\n| 0.5 | - | - |\\n| 1.0 | 0.36 | 0.44 |\\n| 1.5 | 0.44 | 0.46 |\\n| 2.0 | 0.46 | 0.48 |\\n| 2.5 | 0.48 | 0.52 |\\n| 3.0 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The experiments were performed under 40 s of purge at 250 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The CoOx etch rate increases for both cases as the exposure time increases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After 2.5 s of exposure to Hacac or O3.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_27_fig_4.jpg","caption":"Fig. 4. (a) The atomic percentage of the etched $\\mathrm{Al}_2\\mathrm{O}_3$ surface and (b) the $\\mathrm{Al / O}$ ratio of the etched surface of $\\mathrm{Al}_2\\mathrm{O}_3$ measured by X-ray photoelectron spectroscopy (XPS) for the reference, the $\\mathrm{Al}_2\\mathrm{O}_3$ etched by partial layer etching $(\\Theta_{\\mathrm{Al - Cl / BCl - O}}< 1)$ , and the $\\mathrm{Al}_2\\mathrm{O}_3$ etched by ALET $(\\Theta_{\\mathrm{Al - Cl / BCl - O}} = 1)$ .","id":"test/atomic-layer-etching/experimental-usecase/27/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/27/fig_4","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"bar chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/Atomic layer etching of Al2O3 using BCl3Ar.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":636,"height":450,"image_format":"jpeg","image_sha256":"d108946ba1ce254c906748d60e65e888e4b96903cb029988d56819570b342691","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":6,"width":629,"height":213},{"panel_id":"b","x":5,"y":228,"width":629,"height":223}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the atomic percentages of Al and O of the three samples.\"},{\"panel_id\":\"b\",\"text\":\"The bar chart compares the Al/O ratio across three samples: Ref., Partial Layer Etching, and ALET.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Atomic Percentage Al | Atomic Percentage O |\\n|---|---|---|\\n| Ref. | 35 | 65 |\\n| Partial Layer Etching | 30 | 70 |\\n| ALET | 35 | 65 |\"},{\"panel_id\":\"b\",\"text\":\"| Sample | Al/O Ratio |\\n|---|---|\\n| Ref. | 0.55 |\\n| Partial Layer Etching | 0.4 |\\n| ALET | 0.55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 1 nm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ALD Al2O3 reference has an Al/O ratio lower than 0.67, whilst sapphire is exactly 0.67.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Under partial layer etching, the Al/O ratio decreases below the reference value, indicating non-stoichiometric surface modification.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 4 shows that the surface stoichiometry of Al2O3 responds very differently to partial layer etching compared to ALET. Under partial layer etching conditions, the atomic percentages shift and the Al/O ratio becomes lower than that of the ALD reference film. This suggests that the process removes oxygen and aluminum unevenly, likely due to preferential etching of surface-exposed sites. In contrast, when ALET is performed at a reactant ratio of unity, the surface stoichiometry remains unchanged. Both the elemental percentages and the Al/O ratio match the reference, showing that a complete monolayer is removed in each cycle without perturbing the underlying material.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_35_fig_3.jpg","caption":"FIG. 3. Thickness change of $\\mathrm{TiO_2}$ and $\\mathrm{ZrO_2}$ thin films when exposed to $\\mathrm{WF_6}$ [(a) and (e)], $\\mathrm{BCl_3}$ [(b) and (f)], $\\mathrm{SOCl_2}$ [(c) and (g)], or $\\mathrm{TiCl_4}$ [(d) and (h)] doses at various temperatures as measured by in situ ellipsometry.","id":"test/atomic-layer-etching/experimental-usecase/35/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/35/fig_3","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"},{"panel_id":"e","label":"multiple line chart"},{"panel_id":"f","label":"multiple line chart"},{"panel_id":"g","label":"multiple line chart"},{"panel_id":"h","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/Comparison of BCl3, TiCl4, and SOCl2 chlorinating agents for.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1022,"height":1548,"image_format":"jpeg","image_sha256":"f87a582668358ffb3e7c0410d84540d31c24cc02d4de1cf1bbba0ee7ffd92fc7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":12,"y":20,"width":510,"height":376},{"panel_id":"b","x":8,"y":392,"width":499,"height":384},{"panel_id":"c","x":5,"y":776,"width":504,"height":384},{"panel_id":"d","x":3,"y":1159,"width":512,"height":384},{"panel_id":"e","x":530,"y":20,"width":492,"height":345},{"panel_id":"f","x":528,"y":379,"width":494,"height":368},{"panel_id":"g","x":528,"y":762,"width":494,"height":369},{"panel_id":"h","x":528,"y":1144,"width":494,"height":368}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"For the TiO₂ + WF₆ system, thickness change becomes increasingly negative with higher WF₆ doses and temperature, indicating progressive material removal dominated by fluorination reactions, with etching strongly enhanced above 200 °C.\"},{\"panel_id\":\"b\",\"text\":\"In the TiO₂ + BCl₃ system, thickness change remains close to zero across all BCl₃ doses and temperatures, showing that BCl₃ does not significantly etch or grow TiO₂ under these conditions and mainly results in surface-limited reactions.\"},{\"panel_id\":\"c\",\"text\":\"For TiO₂ + SOCl₂, higher SOCl₂ doses and elevated temperatures lead to gradual negative thickness changes, demonstrating temperature-activated chlorination and etching, with the strongest material removal observed at 240 °C.\"},{\"panel_id\":\"d\",\"text\":\"In the TiO₂ + TiCl₄ system, thickness changes are small and slightly positive at most temperatures, indicating limited surface modification or redeposition rather than net etching, consistent with reversible ligand exchange behavior.\"},{\"panel_id\":\"e\",\"text\":\"For the ZrO₂ + WF₆ system, thickness decreases significantly with increasing WF₆ dose, particularly at lower temperatures, confirming efficient fluorination-driven etching of ZrO₂, with stronger material loss at 250–300 °C.\"},{\"panel_id\":\"f\",\"text\":\"In the ZrO₂ + BCl₃ system, thickness changes are slightly positive or near zero depending on temperature, suggesting weak surface reactions and minimal etching, with higher temperatures favoring marginal film growth or surface stabilization.\"},{\"panel_id\":\"g\",\"text\":\"For ZrO₂ + SOCl₂, thickness variations remain small and fluctuate around zero, indicating limited and unstable chlorination reactions, with only minor etching occurring at specific temperatures and doses.\"},{\"panel_id\":\"h\",\"text\":\"In the ZrO₂ + TiCl₄ system, thickness increases steadily with TiCl₄ dose at higher temperatures, showing net film growth or surface chlorination, while lower temperatures exhibit minimal thickness change.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Chemistry|Substrate|Temperatures (°C)|Trend Summary|\\n|----------|---------|-----------------|-------------|\\n|WF6|TiO2|160, 180, 200, 220, 240|Initial swelling → etching at high T|\"},{\"panel_id\":\"b\",\"text\":\"| Chemistry|Substrate|Temperatures (°C)|Trend Summary|\\n|----------|---------|-----------------|-------------|\\n|BCl3|TiO2|200–280|Mild etch; self-limiting behavior|\"},{\"panel_id\":\"c\",\"text\":\"| Chemistry|Substrate|Temperatures (°C)|Trend Summary|\\n|----------|---------|-----------------|-------------|\\n|SOCl2|TiO2|160–240|Clean etching; strong self-limiting|\"},{\"panel_id\":\"d\",\"text\":\"| Chemistry|Substrate|Temperatures (°C)|Trend Summary|\\n|----------|---------|-----------------|-------------|\\n|TiCl4|TiO2|160–240|Weak reaction; minimal change|\"},{\"panel_id\":\"e\",\"text\":\"| Chemistry|Substrate|Temperatures (°C)|Trend Summary|\\n|----------|---------|-----------------|-------------|\\n|WF6|ZrO2|250, 275, 300, 325|Immediate shrinkage → stronger at high T|\"},{\"panel_id\":\"f\",\"text\":\"| Chemistry|Substrate|Temperatures (°C)|Trend Summary|\\n|----------|---------|-----------------|-------------|\\n|BCl3|ZrO2|250–325|Best etching at high T|\"},{\"panel_id\":\"g\",\"text\":\"| Chemistry|Substrate|Temperatures (°C)|Trend Summary|\\n|----------|---------|-----------------|-------------|\\n|SOCl2|ZrO2|250–325|Poor etching; sulfate formation|\"},{\"panel_id\":\"h\",\"text\":\"| Chemistry|Substrate|Temperatures (°C)|Trend Summary|\\n|----------|---------|-----------------|-------------|\\n|TiCl4|ZrO2|250–325|Slight etching at high T|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The curves reveal how each co-reactant affects thickness per dose and how strongly temperature influences reactivity. For TiO₂, SOCl₂ causes clean, stable etching with clear saturation, identifying it as the most effective co-reactant. For ZrO₂, BCl₃ shows the strongest negative thickness change at elevated temperatures, matching the expected formation of volatile ZrCl₄ and making it the best choice for ZrO₂ ALE. Meanwhile, SOCl₂ and TiCl₄ perform poorly on ZrO₂, confirming thermodynamic predictions.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, several chemistries (especially WF₆ + SOCl₂ for TiO₂ and WF₆ + BCl₃ for ZrO₂) show clear saturation behavior after a few doses, confirming self-limiting reactions consistent with ALE.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"TiO₂ + WF₆. TiO₂ + SOCl₂, ZrO₂ + WF₆, ZrO₂ + BCl₃\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SOCl₂ produces strong, clean etching on TiO₂ at all temperatures but yields minimal or even positive thickness change (surface swelling from sulfate formation) on ZrO₂, demonstrating poor ALE performance for ZrO₂.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_35_fig_6.jpg","caption":"FIG. 6. Influence of substrate temperature on the etch rates during atomic layer etching of (a) $\\mathrm{TiO_2}$ and (b) $\\mathrm{ZrO_2}$ thin films.","id":"test/atomic-layer-etching/experimental-usecase/35/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/35/fig_6","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/Comparison of BCl3, TiCl4, and SOCl2 chlorinating agents for.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1081,"height":439,"image_format":"jpeg","image_sha256":"03381831d7ebb13107724f64f9f7bcc2cc77857d121bb69af5017e0ccaea9912","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":12,"y":0,"width":527,"height":433},{"panel_id":"b","x":552,"y":0,"width":529,"height":435}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows TiO₂ etch rate rising linearly with substrate temperature for WF₆ paired with SOCl₂, BCl₃ and TiCl₄ — with SOCl₂ giving the highest rates and TiCl₄ the lowest.\"},{\"panel_id\":\"b\",\"text\":\"shows ZrO₂ etch rate vs temperature: BCl₃ produces the largest and most temperature-sensitive etch rates, TiCl₄ is moderate, and SOCl₂ is essentially inactive. The trends confirm that etching is thermally activated and that optimal co-reactant choice differs by oxide (SOCl₂ best for TiO₂; BCl₃ best for ZrO₂).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Substrate|Co-reactants Compared|Temperature Range (°C)|Trend Summary|\\n|----------|---------------------|----------------------|-------------|\\n|TiO₂|BCl₃, SOCl₂, TiCl₄|160–190|Etch rate increases with T; SOCl₂ highest, TiCl₄ lowest|\"},{\"panel_id\":\"b\",\"text\":\"| Substrate|Co-reactants Compared|Temperature Range (°C)|Trend Summary|\\n|----------|---------------------|----------------------|-------------|\\n|ZrO₂|BCl₃, SOCl₂, TiCl₄|250–325|BCl₃ highest and strongly T-dependent; SOCl₂ nearly flat|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plots clearly show that SOCl₂ provides the highest etch rates for TiO₂ across the tested temperatures, identifying it as the most efficient co-reactant for TiO₂ ALE. For ZrO₂, BCl₃ exhibits by far the strongest temperature-driven increase in etch rate, making it the preferred co-reactant for high-performance etching. TiCl₄ remains intermediate for both oxides, while SOCl₂ performs poorly on ZrO₂. These relationships help determine suitable chemistries and processing windows for selective, optimized ALE.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, both TiO₂ and ZrO₂ show higher etch rates at elevated temperatures, demonstrating thermally activated reaction kinetics.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Volatility of the reaction by-products (e.g., ZrCl₄, TiCl₄, WOCl₄), Stability of intermediate fluorides or sulfates, Activation energy of the ligand-exchange step, Ability of each co-reactant to remove fluorinated surface species\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"BCl₃ shows the steepest increase in etch rate with temperature for ZrO₂, significantly outperforming SOCl₂ and TiCl₄.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_35_fig_7.jpg","caption":"FIG. 7. (a) In situ ellipsometry and [(b)-(d)] Auger electron spectroscopy measurements of $\\mathrm{TiO_2}$ thermal ALE using $\\mathrm{WF_6}$ and $\\mathrm{BCl_3}$ , $\\mathrm{SOCl_2}$ , or $\\mathrm{TiCl_4}$ at $170^{\\circ}\\mathrm{C}$ . The ellipsometry data were collected after every ALE cycle, while AES measurements were done before etching and after 5 and 25 ALE cycles.","id":"test/atomic-layer-etching/experimental-usecase/35/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/35/fig_7","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/Comparison of BCl3, TiCl4, and SOCl2 chlorinating agents for.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1083,"height":775,"image_format":"jpeg","image_sha256":"a8f0edbe7b043bafc30cbedfc51762de6e15a1a3a7fa3b0b36f7feee9e3ba5b0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":205,"y":4,"width":723,"height":441},{"panel_id":"b","x":13,"y":449,"width":381,"height":325},{"panel_id":"c","x":393,"y":449,"width":343,"height":325},{"panel_id":"d","x":735,"y":449,"width":346,"height":325}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows TiO₂ thickness measured by in-situ ellipsometry during repeated ALE cycles at 170 °C for three chemistries. All curves fall to zero (film removed), but WF₆/SOCl₂ removes TiO₂ fastest, WF₆/TiCl₄ is intermediate, and WF₆/BCl₃ is slowest — each trace shows the number of cycles to full removal and the characteristic self-limiting stepwise decrease.\"},{\"panel_id\":\"b\",\"text\":\"shows AES time-series measured before etching and after 5 and 25 cycles for each chemistry. They track surface composition (O, Ti, Si, W, B, C, Cl etc.). AES corroborates ellipsometry: the Si substrate signal rises as TiO₂ is removed, while different chemistries leave distinct residues — e.g. measurable B for BCl₃, little residue for SOCl₂, and higher Cl/W signals for TiCl₄ — indicating differences in by-product volatility and surface cleanliness.\"},{\"panel_id\":\"c\",\"text\":\"shows AES time-series measured before etching and after 5 and 25 cycles for each chemistry. They track surface composition (O, Ti, Si, W, B, C, Cl etc.). AES corroborates ellipsometry: the Si substrate signal rises as TiO₂ is removed, while different chemistries leave distinct residues — e.g. measurable B for BCl₃, little residue for SOCl₂, and higher Cl/W signals for TiCl₄ — indicating differences in by-product volatility and surface cleanliness.\"},{\"panel_id\":\"d\",\"text\":\"shows AES time-series measured before etching and after 5 and 25 cycles for each chemistry. They track surface composition (O, Ti, Si, W, B, C, Cl etc.). AES corroborates ellipsometry: the Si substrate signal rises as TiO₂ is removed, while different chemistries leave distinct residues — e.g. measurable B for BCl₃, little residue for SOCl₂, and higher Cl/W signals for TiCl₄ — indicating differences in by-product volatility and surface cleanliness.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALE Cycles | WF6/SOCl2 Thickness (nm) | WF6/TiCl4 Thickness (nm) | WF6/BCl3 Thickness (nm) |\\n|------------|-------------------------|--------------------------|-------------------------|\\n| 0 | 1.9 | 1.7 | 1.8 |\\n| 2 | 1.5 | 1.4 | 1.3 |\\n| 4 | 1.2 | 1.1 | 0.9 |\\n| 6 | 0.9 | 0.8 | 0.5 |\\n| 8 | 0.5 | 0.4 | 0.2 |\\n| 10 | 0.1 | 0.1 | 0.0 |\\n| ≥12 | 0.0 | 0.0 | 0.0 |\"},{\"panel_id\":\"b\",\"text\":\"| ALE Cycles | Si (%) | O (%) | Ti (%) | B (%) | Cl (%) | C (%) |\\n|------------|--------|-------|--------|-------|--------|-------|\\n| 0 | 5 | 55 | 20 | 15 | 3 | 2 |\\n| 5 | 60 | 25 | 8 | 5 | 1 | 1 |\\n| 10 | 65 | 25 | 5 | 3 | 1 | 1 |\\n| 25 | 70 | 25 | 3 | 1 | 1 | 2 |\"},{\"panel_id\":\"c\",\"text\":\"| ALE Cycles | Si (%) | O (%) | Ti (%) | W (%) | Cl (%) | C (%) |\\n|------------|--------|-------|--------|-------|--------|-------|\\n| 0 | 5 | 55 | 20 | 10 | 5 | 5 |\\n| 5 | 45 | 35 | 10 | 6 | 3 | 1 |\\n| 10 | 55 | 38 | 5 | 2 | 0 | 0 |\\n| 25 | 65 | 40 | 2 | 1 | 0 | 0 |\"},{\"panel_id\":\"d\",\"text\":\"| ALE Cycles | Si (%) | O (%) | Ti (%) | Cl (%) | C (%) |\\n|------------|--------|-------|--------|--------|-------|\\n| 0 | 5 | 55 | 20 | 10 | 10 |\\n| 5 | 50 | 28 | 12 | 6 | 4 |\\n| 10 | 60 | 30 | 6 | 3 | 1 |\\n| 25 | 70 | 30 | 3 | 1 | 0 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The AES results show that SOCl₂ leaves minimal surface contamination and enables rapid, complete removal of TiO₂, making it the most effective co-reactant. WF₆/BCl₃ leaves boron residues, and WF₆/TiCl₄ leaves significant chlorine and tungsten species, suggesting poorer by-product volatility. Therefore, SOCl₂ provides the cleanest and most efficient ALE chemistry for TiO₂ at 170 °C.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, ellipsometry shows a stepwise, self-limiting decrease in TiO₂ thickness across ALE cycles for all chemistries, confirming self-limiting etching behavior.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Chlorine residues (especially for WF₆/TiCl₄), Boron residues (for WF₆/BCl₃), Detected tungsten signal (from WF₆ fluorination step), Carbon traces in some conditions\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SOCl₂ removes TiO₂ the fastest, TiCl₄ is intermediate, and BCl₃ is the slowest.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_35_fig_8.jpg","caption":"FIG. 8. (a) In situ ellipsometry and [(b)-(d)] Auger electron spectroscopy measurements of $\\mathrm{ZrO_2}$ thermal ALE using $\\mathrm{WF_6}$ and $\\mathrm{BCl_3}$ , $\\mathrm{SOCl_2}$ , or $\\mathrm{TiCl_4}$ at $325^{\\circ}\\mathrm{C}$ . The ellipsometry data were collected after every ALE cycle, while AES measurements were done before etching and after 5 and 25 ALE cycles.","id":"test/atomic-layer-etching/experimental-usecase/35/fig_8","sample_id":"atomic-layer-etching/experimental-usecase/35/fig_8","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/Comparison of BCl3, TiCl4, and SOCl2 chlorinating agents for.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1080,"height":775,"image_format":"jpeg","image_sha256":"294403cc9d8f5fdf52853e928ab47e068f2c6ecc549cd1a21c0d3417c98e0054","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":211,"y":7,"width":712,"height":436},{"panel_id":"b","x":5,"y":449,"width":385,"height":326},{"panel_id":"c","x":392,"y":451,"width":343,"height":323},{"panel_id":"d","x":735,"y":450,"width":342,"height":324}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows ZrO₂ thickness measured during repeated ALE cycles at 325 °C. WF₆/BCl₃ removes ZrO₂ fastest (film gone in ~3 cycles), WF₆/TiCl₄ is slightly slower (~4–5 cycles), and WF₆/SOCl₂ is ineffective (film persists after 25 cycles). The curves demonstrate self-limiting removal for the effective chemistries and a clear chemistry-dependent rate.\"},{\"panel_id\":\"b\",\"text\":\"present AES composition measured before etching and after 5 and 25 cycles for each chemistry. AES corroborates ellipsometry: for BCl₃, Zr and O drop rapidly and B residues appear; for SOCl₂, S signal is detectable and Zr/O remain high (sulfate formation and poor removal); for TiCl₄, Zr decreases moderately while Cl/W signatures indicate incomplete volatile conversion. Together the panels link kinetics (how quickly ZrO₂ is removed) with surface chemistry (what residues form), explaining why BCl₃ is optimal for ZrO₂ ALE and SOCl₂ fails.\"},{\"panel_id\":\"c\",\"text\":\"present AES composition measured before etching and after 5 and 25 cycles for each chemistry. AES corroborates ellipsometry: for BCl₃, Zr and O drop rapidly and B residues appear; for SOCl₂, S signal is detectable and Zr/O remain high (sulfate formation and poor removal); for TiCl₄, Zr decreases moderately while Cl/W signatures indicate incomplete volatile conversion. Together the panels link kinetics (how quickly ZrO₂ is removed) with surface chemistry (what residues form), explaining why BCl₃ is optimal for ZrO₂ ALE and SOCl₂ fails.\"},{\"panel_id\":\"d\",\"text\":\"present AES composition measured before etching and after 5 and 25 cycles for each chemistry. AES corroborates ellipsometry: for BCl₃, Zr and O drop rapidly and B residues appear; for SOCl₂, S signal is detectable and Zr/O remain high (sulfate formation and poor removal); for TiCl₄, Zr decreases moderately while Cl/W signatures indicate incomplete volatile conversion. Together the panels link kinetics (how quickly ZrO₂ is removed) with surface chemistry (what residues form), explaining why BCl₃ is optimal for ZrO₂ ALE and SOCl₂ fails.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALE Cycles | WF6/SOCl2 Thickness (nm) | WF6/TiCl4 Thickness (nm) | WF6/BCl3 Thickness (nm) |\\n|------------|-------------------------|--------------------------|-------------------------|\\n| 0 | 3.1 | 3.5 | 3.7 |\\n| 2 | 2.7 | 2.0 | 1.6 |\\n| 4 | 2.5 | 0.6 | 0.8 |\\n| 6 | 2.3 | 0.1 | 0.1 |\\n| 8 | 2.1 | 0.0 | 0.0 |\\n| 12 | 1.8 | 0.0 | 0.0 |\\n| 16 | 1.4 | 0.0 | 0.0 |\\n| 20 | 1.0 | 0.0 | 0.0 |\\n| 25 | 0.5 | 0.0 | 0.0 |\"},{\"panel_id\":\"b\",\"text\":\"| ALE Cycles | Al (%) | O (%) | C (%) | Zr (%) | B (%) |\\n|------------|--------|-------|-------|--------|-------|\\n| 0 | 0 | 55 | 20 | 25 | 0 |\\n| 5 | 15 | 30 | 25 | 20 | 10 |\\n| 10 | 25 | 35 | 20 | 15 | 8 |\\n| 25 | 45 | 40 | 8 | 5 | 2 |\"},{\"panel_id\":\"c\",\"text\":\"| ALE Cycles | Al (%) | O (%) | C (%) | Zr (%) | W (%) | S (%) |\\n|------------|--------|-------|-------|--------|-------|-------|\\n| 0 | 0 | 55 | 20 | 25 | 0 | 0 |\\n| 5 | 5 | 35 | 30 | 25 | 3 | 2 |\\n| 10 | 15 | 33 | 20 | 20 | 2 | 2 |\\n| 25 | 45 | 28 | 10 | 15 | 1 | 1 |\"},{\"panel_id\":\"d\",\"text\":\"| ALE Cycles | Al (%) | O (%) | C (%) | Zr (%) | W (%) | Ti (%) |\\n|------------|--------|-------|-------|--------|-------|--------|\\n| 0 | 0 | 55 | 20 | 25 | 0 | 0 |\\n| 5 | 10 | 35 | 25 | 25 | 2 | 3 |\\n| 10 | 20 | 35 | 20 | 20 | 2 | 3 |\\n| 25 | 55 | 32 | 10 | 12 | 1 | 2 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ellipsometry data show that BCl₃ and TiCl₄ enable rapid, self-limiting ZrO₂ removal, whereas SOCl₂ fails due to slow kinetics. AES confirms this by revealing B residues for BCl₃ and Cl/W residues for TiCl₄, but heavy S residues and persistent Zr/O for SOCl₂. Therefore, WF₆/BCl₃ is the most efficient chemistry for ZrO₂ ALE, while SOCl₂ should be avoided because it forms nonvolatile sulfates.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. WF₆/BCl₃ and WF₆/TiCl₄ rapidly remove ZrO₂ within a few cycles, while WF₆/SOCl₂ barely etches the film even after 25 cycles.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Sulfur-containing species (S), Persistent Zr and O (indicating unremoved oxide), Minimal exposure of the Si substrate, These suggest sulfate formation, which is nonvolatile and blocks etching.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"WF₆/BCl₃ yields the fastest ZrO₂ removal, with the film almost completely etched in about 3 cycles.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_35_fig_9.jpg","caption":"FIG. 9. RMS surface roughness evolution as a function of ALE cycles as measured by atomic force microscopy. The ALE of $\\mathrm{TiO_2}$ films was performed at $170^{\\circ}\\mathrm{C}$ and the $\\mathrm{ZrO_2}$ films at $325^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-etching/experimental-usecase/35/fig_9","sample_id":"atomic-layer-etching/experimental-usecase/35/fig_9","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/Comparison of BCl3, TiCl4, and SOCl2 chlorinating agents for.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":544,"height":450,"image_format":"jpeg","image_sha256":"eb057e3c6e483479fb992f76b63458f72fbca7e249306e615bad90b7d7385db1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":544,"height":450}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot shows RMS surface roughness (pm) measured by AFM as a function of ALE cycles for TiO₂ (170 °C) and ZrO₂ (325 °C) using WF₆ paired with BCl₃, SOCl₂, or TiCl₄. Both materials start with higher roughness and show a rapid drop after a few cycles; ZrO₂ begins much rougher (~180–190 pm) and smooths more dramatically than TiO₂. Effective chemistries (WF₆/BCl₃ and WF₆/TiCl₄ for ZrO₂; WF₆/SOCl₂ and WF₆/TiCl₄ for TiO₂) produce greater smoothing, while SOCl₂ is least effective at smoothing ZrO₂ — matching its poor etch performance. Overall, ALE leads to net surface smoothing, and the degree of smoothing correlates with the chemistry’s etch effectiveness.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Material|Initial Roughness (0 cycles)|Roughness after 5 cycles|Roughness after 25 cycles|Trend Summary|\\n|---------|----------------------------|------------------------|-------------------------|-------------|\\n|TiO₂|~90–100 pm|Decreases for all chemistries|Further decreases; becomes smoother overall|ALE smooths TiO₂ surfaces|\\n|ZrO₂|~180–190 pm|Sharp drop for all chemistries|Chemistry-dependent smoothing; SOCl₂ least effective|ZrO₂ starts rougher but smooths strongly with effective chemistries|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Roughness evolution provides insight into how uniformly each chemistry removes material. Effective chemistries produce greater smoothing due to consistent layer removal. For TiO₂, SOCl₂ and TiCl₄ lead to smoother surfaces, while for ZrO₂, BCl₃ and TiCl₄ yield the strongest smoothing effects. In contrast, SOCl₂ produces limited smoothing on ZrO₂, reflecting its poor etch performance. Thus, AFM roughness trends help confirm which co-reactant chemistries produce uniform, high-quality ALE.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Both materials exhibit noticeable smoothing after ALE cycles, although the degree of smoothing depends on the co-reactant chemistry.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Initial surface morphology (TiO₂ smoother; ZrO₂ rougher), Reaction efficiency of each co-reactant, Volatility of reaction by-products, Uniformity of layer-by-layer removal\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ZrO₂ shows the largest reduction in roughness, dropping from ~180–190 pm initially to much lower values after 25 cycles.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_37_fig_2.jpg","caption":"FIG. 2. In situ ellipsometry data collected during deposition and etching steps on the Si-OH surface. (a) and (b) show the raw delta $(\\Delta)$ and psi $(\\Psi^{\\prime})$ parameters, respectively, which are fitted by a Cauchy model to (c) measure the $\\mathrm{TiO_2}$ layer thickness.","id":"test/atomic-layer-etching/experimental-usecase/37/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/37/fig_2","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/Effect of reactant dosing on selectivity during area-selective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":619,"height":1528,"image_format":"jpeg","image_sha256":"8b69b59580729319c832ee6fcf7fca6d5c1715a0743dd66d14bbfe3d0b0edb11","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":8,"width":611,"height":498},{"panel_id":"b","x":5,"y":496,"width":611,"height":508},{"panel_id":"c","x":0,"y":1002,"width":616,"height":521}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the trend of Δ values over cycles for four different wavelengths (465 nm, 525 nm, 580 nm, and 635 nm). The Δ values decrease with increasing cycles until around cycle 240, after which they start to increase again.\"},{\"panel_id\":\"b\",\"text\":\"The line chart displays the constant values of Ψ for four different wavelengths (465 nm, 525 nm, 580 nm, and 635 nm) over cycles. The values remain stable throughout the cycles.\"},{\"panel_id\":\"c\",\"text\":\"The line chart illustrates the thickness of a material over cycles. The thickness increases steadily until cycle 240, after which it decreases slightly.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycles | 465 nm | 525 nm | 580 nm | 635 nm |\\n|---|---|---|---|---|\\n| 210 | 164 | 166 | 168 | 168 |\\n| 215 | 163 | 165 | 167 | 167 |\\n| 220 | 162 | 164 | 166 | 166 |\\n| 225 | 161 | 163 | 165 | 165 |\\n| 230 | 160 | 162 | 164 | 164 |\\n| 235 | 159 | 161 | 163 | 163 |\\n| 240 | 158 | 160 | 162 | 162 |\\n| 245 | 161 | 163 | 165 | 166 |\"},{\"panel_id\":\"b\",\"text\":\"| Cycles | 465 nm | 525 nm | 580 nm | 635 nm |\\n|---|---|---|---|---|\\n| 210 | 21 | 19 | 17 | 17 |\\n| 215 | 21 | 19 | 17 | 17 |\\n| 220 | 21 | 19 | 17 | 17 |\\n| 225 | 21 | 19 | 17 | 17 |\\n| 230 | 21 | 19 | 17 | 17 |\\n| 235 | 21 | 19 | 17 | 17 |\\n| 240 | 21 | 19 | 17 | 17 |\\n| 245 | 21 | 19 | 17 | 17 |\"},{\"panel_id\":\"c\",\"text\":\"| Cycles | Thickness (nm) |\\n|---|---|\\n| 210 | 4.8 |\\n| 215 | 5.0 |\\n| 220 | 5.2 |\\n| 225 | 5.4 |\\n| 230 | 5.6 |\\n| 235 | 5.8 |\\n| 240 | 6.0 |\\n| 245 | 5.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Δ decreases linearly during deposition and increases linearly during etching.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 170 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In figure 2, the raw ellipsometry parameters Ψ and Δ, measured at four wavelengths, are shown alongside the thickness extracted using a temperature-dependent Cauchy model. While Ψ remains essentially constant over the small thickness range involved, Δ exhibits a clear correlation with the TiO₂ film thickness. This demonstrates that Δ is the primary ellipsometric parameter for detecting incremental growth and removal during ALD and ALE.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ψ does not change significantly during both deposition and etching.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_37_fig_8.jpg","caption":"FIG. 8. $\\mathrm{TiO_2}$ film thickness on $\\mathrm{Si - H}$ and $\\mathrm{Si - OH}$ surfaces during ALE/ALE super-cycles with $90~\\mathrm{ms}$ dosing conditions for $\\mathrm{TiCl_4 / H_2O}$ . The measurement was done by in situ ellipsometry, with the data point taken after every five cycles for ALD and every cycle for ALE.","id":"test/atomic-layer-etching/experimental-usecase/37/fig_8","sample_id":"atomic-layer-etching/experimental-usecase/37/fig_8","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/Effect of reactant dosing on selectivity during area-selective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":672,"height":492,"image_format":"jpeg","image_sha256":"504269b9a3d7a1f4bc42d1c9686a34847d9b839b84d61184f9f51951fef3e456","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":672,"height":492}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the thickness of Si-OH and Si-H as a function of super-cycles. Both thicknesses increase linearly with increasing super-cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Super-Cycles | Thickness (nm) Si-H | Thickness (nm) Si-OH |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 5 | 0 | 4 |\\n| 10 | 0 | 8 |\\n| 15 | 0 | 13 |\\n| 20 | 0 | 17.5 |\\n| 25 | 0.5 | 22.5 |\\n| 30 | 0.5 | 25 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Si-OH and Si-H.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"30.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"90 ms for both.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"170 °C.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_44_fig_5.jpg","caption":"FIG. 5. (Color online) Film thickness vs number of AlN ALE reaction cycles at $275^{\\circ}\\mathrm{C}$ in pure AlN region of AlN film showing results for thermal AlN ALE and plasma-enhanced ALE. (a) $\\mathrm{H}_{2}$ plasma increases AlN etch rate from $0.36$ to $1.96\\mathrm{\\AA}$ /cycle. (b) Ar plasma increases AlN etch rate from $0.36$ to $0.66\\mathrm{\\AA}$ /cycle.","id":"test/atomic-layer-etching/experimental-usecase/44/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/44/fig_5","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/Thermal atomic layer etching of crystalline aluminum nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":605,"height":1083,"image_format":"jpeg","image_sha256":"4442b55d732128cfd726cfc195a60c74235cf28ae1301645f198389631099f3a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":5,"width":592,"height":530},{"panel_id":"b","x":0,"y":550,"width":601,"height":530}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the thickness (Å) of AlN as a function of ALE reaction cycle number at 275 °C. Two ALE processes are compared: thermal ALE from 0 to 14 cycles and H₂ plasma-enhanced ALE from 15 to 26 cycles. The introduction of H₂ plasma increases the AlN etch rate from 0.36 to 1.96 Å/cycle.\"},{\"panel_id\":\"b\",\"text\":\"The line chart shows the thickness (Å) of AlN as a function of ALE reaction cycle number at 275 °C. Two ALE processes are compared: thermal ALE from 0 to 14 cycles and Ar plasma-enhanced ALE from 15 to 26 cycles. The use of Ar plasma increases the AlN etch rate from 0.36 to 0.66 Å/cycle. This image clearly indicates that Ar Plasma enhnaced ALE shows a higher etch rate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle Number | Thickness (Å) |\\n|---|---|\\n| 0 | 450 |\\n| 4 | 449 |\\n| 8 | 447 |\\n| 12 | 446 |\\n| 16 | 441 |\\n| 20 | 433 |\\n| 24 | 438 |\\n| 28 | 425 |\"},{\"panel_id\":\"b\",\"text\":\"| Cycle Number | Thickness (Å) |\\n|---|---|\\n| 0 | 438 |\\n| 4 | 436 |\\n| 8 | 435 |\\n| 12 | 433 |\\n| 16 | 430 |\\n| 20 | 428 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"HF Pulse & Purge.\\n\\n, Sn(acac)₂ Pulse & Purge.\\n\\n, H₂ Plasma Exposure (new step).\\n\\n, Purge.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"H₂ plasma provides a ~5x enhancement (chemical), while Ar plasma gives only a ~2x enhancement (physical). This reveals the trade-off: H₂ plasma offers higher efficiency via chemical radical reactions (removing blocking ligands), but may introduce more hydrogen incorporation. Ar plasma offers a cleaner, purely physical enhancement (ion/radiation) but with significantly lower etch rate gains, requiring a balance between speed and potential plasma-induced damage or impurity introduction.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Residual acac surface species (ligands) that block reactive sites.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ar plasma may be better suited for high-aspect-ratio features because it avoids the radical depletion and non-uniformity issues that H₂ radicals can cause in deep trenches. While slower, its more isotropic ion-driven enhancement can improve etch conformity and reduce loading effects in complex geometries.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG1.jpg","caption":"FIG. 1. Values of Gibbs free energy change for oxidation reactions of molybdenum to $\\mathrm{MoO}_2$ and $\\mathrm{MoO}_3$ with $\\mathrm{H}_2\\mathrm{O}$ , $\\mathrm{N}_2\\mathrm{O}$ , $\\mathrm{O}_2$ , and $\\mathrm{O}_3$ at $0 - 500^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-etching/experimental-usecase/47/FIG1","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG1","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":669,"height":542,"image_format":"jpeg","image_sha256":"af6ab55fe4fc356703b246e5ba4baa6f56512cb113634fb9e0f4996466331fc9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":6,"width":664,"height":533}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the Gibbs free energy change (ΔG) for various reactions of molybdenum (Mo) with different oxidants at different temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction | ΔG Range (kJ/mol) | Trend with Temperature |\\n|----------------------------------------------|--------------------|-------------------------|\\n| Mo + 3 H₂O(g) → MoO₃ + 3 H₂(g) | ~0 to +100 | Slightly increases |\\n| Mo + H₂O(g) → MoO₂ + H₂(g) | ~-200 to -100 | Increases |\\n| Mo + O₂(g) → MoO₂ | ~-600 to -500 | Increases |\\n| Mo + 1.5 O₂(g) → MoO₃ | ~-600 to -500 | Increases |\\n| Mo + 2 N₂O(g) → MoO₂ + 2 N₂(g) | ~-800 to -700 | Increases |\\n| Mo + 2 O₃(g) → MoO₂ + O₂(g) | ~-900 to -800 | Increases |\\n| Mo + 3 N₂O(g) → MoO₃ + 3 N₂(g) | ~-1000 to -900 | Increases |\\n| Mo + 3 O₃(g) → MoO₃ + O₂(g) | ~-1100 to -1000 | Increases |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Gibbs free energy changes of the oxidation reactions of molybdenum using H2O, N2O, O2, and O3 as oxidizing agents were calculated to understand the feasibility of ALE\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"MoO2 and MoO3 were considered, as they can form volatile chlorides and oxychlorides via deoxychlorination reactions with NbCl5. Oxides with lower oxidation states were also not available in the thermodynamic database.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The energy changes are negative over the whole temperature range, except for the reaction with H2O, which has a positive Gibbs free energy change in this temperature range.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG2.jpg","caption":"FIG. 2. Values of Gibbs free energy changes of etching reactions of $\\mathrm{MoO}_2$ and $\\mathrm{MoO}_3$ with $\\mathrm{NbCl}_5$ at $0 - 500^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-etching/experimental-usecase/47/FIG2","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG2","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":669,"height":542,"image_format":"jpeg","image_sha256":"279faf211e5037756e795bcacfe2e1aa2346ed3086f9699677333f502ef3fbd9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":6,"width":664,"height":534}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the gibbs free energy changes as a function of temperature for various chemical reactions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction | ΔG Range (kJ/mol) | Trend with Temperature |\\n|--------------------------------------------------------------|--------------------|-------------------------|\\n| MoO₂ + NbCl₅(g) → MoOCl₂(g) + NbOCl₃(g) | ~150 to ~50 | Decreases |\\n| MoO₃ + 3 NbCl₅(g) → MoCl₆(g) + 3 NbOCl₃(g) | ~120 to ~20 | Decreases |\\n| MoO₂ + 2 NbCl₅(g) → MoOCl₄(g) + 2 NbOCl₃(g) | ~50 to ~-50 | Decreases |\\n| MoO₃ + 2 NbCl₅(g) → MoOCl₄(g) + 2 NbOCl₃(g) | ~0 to ~-100 | Decreases |\\n| MoO₃ + NbCl₅(g) → MoO₂Cl₂(g) + NbOCl₃(g) | ~-50 to ~-150 | Decreases |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etching of oxides occurs by deoxychlorination, producing NbOCl3 and molybdenum chlorides or oxychlorides as reaction products. MoCl4 is the only thermodynamically favorable etch product for MoO2 and is able to form above 200 °C. Conversion of MoO2 to a solid MoOCl2 is also favorable, but etching via this reaction pathway is prevented by the low volatility of MoOCl2\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For MoO3, full chlorination is not thermodynamically favorable, but both MoO2Cl2 and MoOCl4 are possible etch products above about 20 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etching of metallic molybdenum by NbCl5 alone was also considered. Possible reactions leading to continuous etching would be oxidation of the metallic Mo to either MoCl4 or MoCl6 by NbCl5, which itself would be reduced to NbCl4. Neither reaction is thermodynamically favorable as both have highly positive Gibbs free energy changes at 0–500 °C. This indicates that continuous etching of Mo by NbCl5 is not an issue for this process, but does not mean that NbCl5 is completely inert toward Mo\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG3.jpg","caption":"FIG. 3. Equilibrium composition for an input of $0.1\\mathrm{kmol}$ $\\mathrm{NbCl}_5$ and $0.02\\mathrm{kmol}$ Mo at 10 mbar pressure. $5\\mathrm{kmol}$ of $\\mathbb{N}_2$ was used as background gas to approximate the partial pressure of $\\mathrm{NbCl}_5$ in the reactor setup used in this paper.","id":"test/atomic-layer-etching/experimental-usecase/47/FIG3","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG3","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":673,"height":528,"image_format":"jpeg","image_sha256":"89930675ddc469508084cf51e8d9e32177e4451374dc00d4b8d2f80eca645281","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":3,"width":665,"height":520}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the amount of various chlorides (NbCl₄(s), NbCl₅(s), MoCl₃(s), NbCl₃(s), NbCl₂.67(s), NbCl₄(g), MoCl₂(s), MoCl₄(g)) in kmol as a function of temperature in °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | NbCl₅(g) | NbCl₅(s) | NbCl₄(s) | NbCl₄(g) | NbCl₃(s) | NbCl₂.₆₇(s) | MoCl₃(s) | MoCl₂(s) | MoCl₄(g) |\\n|-------------------|----------|----------|----------|----------|----------|-------------|----------|----------|----------|\\n| 0 | 0 | 0.04 | 0.06 | 0 | 0 | 0 | 0.02 | 0 | 0 |\\n| 50 | 0.01 | 0.04 | 0.05 | 0 | 0 | 0 | 0.02 | 0 | 0 |\\n| 100 | 0.05 | 0.03 | 0.02 | 0.005 | 0 | 0 | 0.02 | 0 | 0 |\\n| 150 | 0.07 | 0.01 | 0.005 | 0.01 | 0.015 | 0.005 | 0.02 | 0 | 0 |\\n| 200 | 0.07 | 0 | 0 | 0.015 | 0.02 | 0.01 | 0.02 | 0 | 0 |\\n| 250 | 0.07 | 0 | 0 | 0.02 | 0.015 | 0.015 | 0.02 | 0.005 | 0.005 |\\n| 300 | 0.07 | 0 | 0 | 0.025 | 0.01 | 0.015 | 0.02 | 0.01 | 0.01 |\\n| 350 | 0.07 | 0 | 0 | 0.03 | 0.005 | 0.015 | 0.02 | 0.015 | 0.015 |\\n| 400 | 0.07 | 0 | 0 | 0.035 | 0 | 0.015 | 0.02 | 0.02 | 0.02 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Equilibrium composition calculated by minimizing the Gibbs\\nfree energy of the system when Mo and NbCl5(g) are given as the\\nstarting materials indicates that they can react to form nonvolatile\\nMoCl3 and various lower niobium chlorides (Fig. 3). Below 150 °C,\\nthe dominant Nb-containing species is solid NbCl4, and above this\\ntemperature up to 400 °C, the reacted NbCl5 is mostly expected to\\nform NbCl3 and Nb3Cl8. Once the oxidized surface layer has been\\netched, these lower chlorides could form a layer that prevents\\nfurther reactions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Equilibrium composition calculated by minimizing the Gibbs free energy of the system when Mo and NbCl5(g) are given as the starting materials indicates that they can react to form nonvolatile MoCl3 and various lower niobium chlorides.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Below 150 °C, the dominant Nb-containing species is solid NbCl4, and above this temperature up to 400 °C, the reacted NbCl5 is mostly expected to\\nform NbCl3 and Nb3Cl8. Once the oxidized surface layer has been etched, these lower chlorides could form a layer that prevents further reactions.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Equilibrium compositions of both NbCl3 and MoCl3 were calculated in the presence of excess O2 to evaluate their effect on the etching process. It was\\nfound that for NbCl3 the most thermodynamically favorable product is NbO2Cl below about 240 °C and Nb2O5 above it. For MoCl3, the product is MoO3 below 350 °C and gaseous MoO2Cl2 above 350 °C. This indicates that if the lower chlorides are formed, they are readily oxidized and then etched in the subsequent ALE cycle, as NbCl5 has been shown to also etch Nb2O5\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_fig_4.jpg","caption":"Fig. 4 - Reaction progression of half-cycles for both steps over time with an operating temperature of 573 K. The full progression is achieved at 1.38 s for Step A and 2.38 s for Step B, respectively.","id":"test/atomic-layer-etching/simulation-usecase/11/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/11/fig_4","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":609,"height":450,"image_format":"jpeg","image_sha256":"dc452a2b98d9de89fd573d1a6a4878896833900a6fedab44bb145db6a7503f5a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":607,"height":445}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Kinetic Monte Carlo simulation results showing the progression of half-cycle completion (%) versus time for both ALE steps at 573 K. Step A (HF fluorination, blue) reaches 100% surface coverage at 1.38 s, while Step B (TMA etching, orange) completes at 2.38 s. Both curves show rapid initial progress followed by a gradual approach to saturation, characteristic of self-limiting ALE surface reactions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Step A (%) | Step B (%) |\\n|---|---|---|\\n| 0.00 | 0 | 0 |\\n| 0.05 | 16 | 0 |\\n| 0.10 | 41 | 10 |\\n| 0.15 | 50 | 25 |\\n| 0.20 | 64 | 38 |\\n| 0.25 | 72 | 48 |\\n| 0.30 | 77 | 56 |\\n| 0.40 | 84 | 68 |\\n| 0.50 | 91 | 78 |\\n| 0.60 | 94 | 82 |\\n| 0.80 | 98 | 91 |\\n| 1.00 | 99 | 95 |\\n| 1.25 | 99.5 | 96 |\\n| 1.50 | 100 | 98 |\\n| 2.00 | 100 | 99.5 |\\n| 2.50 | 100 | 100 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Step B (TMA etching) involves a more complex reaction mechanism with multiple sequential steps including TMA adsorption, ligand exchange, and DMAF desorption at two different reaction sites (l-AlF2 and r-AlF3). Additionally, TMA has a lower sticking coefficient (0.02) compared to HF (0.15), which slows the adsorption kinetics. The requirement for multiple TMA molecules to complete the etching at each unit cell further extends the process time.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The stepwise jumps reflect the discrete nature of the kMC simulation, where individual reaction events occur stochastically at specific time intervals rather than continuously.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For Step A, 100% means complete fluorination of the Al2O3 surface as AlF3; for Step B, 100% means complete removal of the fluorinated layer through DMAF volatilization.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The simulated times agree well with experiments. For Step A, experiments showed self-limiting behavior after 1.0 s of HF exposure with no significant change after 1.5 s, consistent with the simulated 1.38 s. For Step B, experiments indicated completion after approximately 2.25 s of TMA exposure, closely matching the simulated 2.38 s. This agreement validates the kMC model.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_14_fig_1.jpg","caption":"Fig. 1. Changes in the heights of the material surfaces during $300\\mathrm{eV}$ $\\mathrm{Ar^{+}}$ ion irradiation, obtained from MD simulations. With HFC, an about $2\\mathrm{nm}$ thick HFC layer was deposited on the flat model SiN surface. Without HFC, the flat model SiN surface was etched without HFC deposition. The horizontal axis represents the ion dose. Two vertical broken lines delineate different desorption regimes I, II, and, III, discussed in the main text. For the atomic representations of the surfaces, the reader is referred to section II of the Supplementary Material.","id":"test/atomic-layer-etching/simulation-usecase/14/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/14/fig_1","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/Molecular dynamics simulations of silicon nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":667,"height":619,"image_format":"jpeg","image_sha256":"8114977bbf93a24caf2b3de6184bafa11395fe2e27caec1c6c83bd653a01aab7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":667,"height":619}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart presents depth (in nm) versus ion dose (in ×10¹⁶ ions/cm²) for Ar⁺ bombardment under two experimental conditions: with and without hydrofluorocarbon (HFC). The sample treated with HFC initially shows greater surface material removal (positive depth), followed by gradual etching until reaching a net depth loss similar to the untreated case. Three regimes (I–III) are marked with dashed lines, indicating transitions in material removal behavior. The untreated sample displays relatively consistent shallow etching across the dose range.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion Dose (×10¹⁶ ions cm⁻²) | Depth [nm] with HFC | Depth [nm] without HFC |\\n|----------------------------|---------------------|-------------------------|\\n| 0.0 | 2.0 | 0.1 |\\n| 0.2 | 1.5 | 0.0 |\\n| 0.5 | 1.0 | -0.1 |\\n| 0.8 | 0.4 | -0.2 |\\n| 1.0 | 0.0 | -0.3 |\\n| 1.2 | -0.2 | -0.4 |\\n| 1.5 | -0.4 | -0.5 |\\n| 2.0 | -0.6 | -0.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Depth (nm) change of the sample surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The segmentation into regions I, II, and III indicates distinct phases of the etching process. In Region I, there is rapid removal of material in the HFC-treated sample, likely due to a reactive surface layer. Region II shows a slower reduction, suggesting the surface becomes more resistant to ion bombardment. Region III stabilises, implying that a steady-state etch rate is reached. This behavior contrasts with the untreated sample, which exhibits a relatively linear and shallow etch throughout.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Catalytic effect of HFC, Surface conditioning with Ar⁺, Ion dose optimization, Reaction regime identification\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_14_fig_2.jpg","caption":"Fig. 2. Changes in the heights of the material surface during three-step SiN PE-ALE with (a) $\\mathrm{Ar^{+}}$ b $\\mathrm{Kr^{+}}$ and (c) $\\mathrm{Xe^{+}}$ ion irradiations over the first five cycles, obtained from MD simulations. Each FE-ALE cycle consists of the adsorption step (denoted by $①$ , desorption step $(2)$ , and oxidation step $(3)$ . The lower curves denoted as physical suttering indicate the changes in the SIN material surface positions by physical suttering with the corresponding ions as functions of the ion dose. For the curves representing the PE-ALE processes, the height changes are also represented as functions of the ion dose during the desorption step and a unit length of the horizontal axis represents the same ion dose for both PE-ALE and physical sputtering curves. The PE-ALE simulation conditions are summarized in Table I.","id":"test/atomic-layer-etching/simulation-usecase/14/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/14/fig_2","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/Molecular dynamics simulations of silicon nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1392,"height":1053,"image_format":"jpeg","image_sha256":"dbea9967a3cfd22ea9fe0541034b9b839f10415c303a0217d23bd56629ab172a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":0,"width":655,"height":507},{"panel_id":"b","x":740,"y":0,"width":652,"height":508},{"panel_id":"c","x":375,"y":555,"width":650,"height":498}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares atomic layer etching (ALE) and physical sputtering depths over five cycles for three different noble gas ions: Ar⁺, Kr⁺, and Xe⁺. In each subplot, the ALE condition (black line) shows periodic, steep decreases in surface depth, indicating controlled etching per cycle. In contrast, the red traces for physical sputtering display minimal and more linear depth reduction, suggesting that physical sputtering alone removes significantly less material per cycle. The graphs are labeled with Roman numerals (I–III) that denote distinct etch regions, possibly representing phases of material response or tool behavior during processing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle | ALE Depth [nm] | Sputtering Depth [nm] |\\n|-------|----------------|------------------------|\\n| 0 | 0 | 0 |\\n| 1 | 1.9 | -0.2 |\\n| 2 | 3.5 | -0.4 |\\n| 3 | 5.2 | -0.6 |\\n| 4 | 7.0 | -0.8 |\\n| 5 | 8.5 | -1.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Cycle | ALE Depth [nm] | Sputtering Depth [nm] |\\n|-------|----------------|------------------------|\\n| 0 | 0 | 0 |\\n| 1 | 2.1 | -0.3 |\\n| 2 | 4.3 | -0.6 |\\n| 3 | 6.2 | -0.8 |\\n| 4 | 8.1 | -1.0 |\\n| 5 | 9.8 | -1.2 |\"},{\"panel_id\":\"c\",\"text\":\"| Cycle | ALE Depth [nm] | Sputtering Depth [nm] |\\n|-------|----------------|------------------------|\\n| 0 | 0 | 0 |\\n| 1 | 2.3 | -0.4 |\\n| 2 | 4.7 | -0.7 |\\n| 3 | 7.0 | -1.0 |\\n| 4 | 9.3 | -1.3 |\\n| 5 | 11.5 | -1.5 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"To evaluate the effectiveness and control of etching using noble gas ions (Ar⁺, Kr⁺, Xe⁺) under ALE and sputtering conditions\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Xe⁺, Kr⁺, Ar⁺\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The labeled regions likely denote distinct etching regimes: Region I shows the initial rapid etching response, possibly due to surface activation or reactive layer removal. Region II marks a more stable, consistent etch rate per cycle, typical of self-limiting ALE behavior. Region III may indicate a saturation or termination phase, where etch depth stabilises or material is fully removed.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_14_fig_4.jpg","caption":"Fig. 4. Depth profiles of atomic concentrations at the end of the oxidation step of the first SiN PE-ALE cycle with (a) $\\mathrm{Ar^{+}}$ , (b) $\\mathrm{Kr^{+}}$ , and (c) $\\mathrm{Xe^{+}}$ ion irradiations, obtained from MD simulations.","id":"test/atomic-layer-etching/simulation-usecase/14/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/14/fig_4","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/Molecular dynamics simulations of silicon nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1383,"height":744,"image_format":"jpeg","image_sha256":"5063d7e67b4d6983cdc2546da3ce3c0a96f9ccca31953e5e83f1e4713f2a57e3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":11,"y":10,"width":439,"height":734},{"panel_id":"b","x":483,"y":10,"width":438,"height":734},{"panel_id":"c","x":953,"y":9,"width":430,"height":735}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares atomic density profiles across depth for six or seven different elements under three experimental conditions: Ar (a), Kr (b), and Xe (c) ion exposure. In each case, the profiles illustrate how specific elements (e.g., H, O, C, Si, N) are distributed within and near the surface layers. The presence and penetration depth of each element vary depending on the ion species used, with notable differences in how deeply Ar, Kr, and Xe penetrate the material and affect the distribution of native and implanted species.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Depth [nm] | Atomic density [x 1023/cm3] |\\n|---|---|\\n|-6 | 0 |\\n|-5 | 0 |\\n|-4 | 0 |\\n|-3 | 0 |\\n|-2 | 0 |\\n|-1 | 0 |\\n| 0 | 0 |\\n| 1 | 0 |\\n| 2 | 0 |\\n| 3 | 0 |\\n| 4 | 0 |\\n| 5 | 0 |\\n| 6 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Depth [nm] | Atomic density [x 1023/cm3] |\\n|---|---|\\n|-6 | 0 |\\n|-5 | 0 |\\n|-4 | 0 |\\n|-3 | 0 |\\n|-2 | 0 |\\n|-1 | 0 |\\n| 0 | 0 |\\n| 1 | 0 |\\n| 2 | 0 |\\n| 3 | 0 |\\n| 4 | 0 |\\n| 5 | 0 |\\n| 6 | 0 |\"},{\"panel_id\":\"c\",\"text\":\"| Depth [nm] | Atomic density [x 1023/cm3] |\\n|---|---|\\n|-6 | 0 |\\n|-5 | 0 |\\n|-4 | 0 |\\n|-3 | 0 |\\n|-2 | 0 |\\n|-1 | 0 |\\n| 0 | 0 |\\n| 1 | 0 |\\n| 2 | 0 |\\n| 3 | 0 |\\n| 4 | 0 |\\n| 5 | 0 |\\n| 6 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ion species used for exposure: Ar in (a), Kr in (b), and Xe in (c).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ar: shows deeper penetration, Kr: intermediate penetration , Xe: least penetration\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The depth-dependent profiles indicate that heavier ions like Xe tend to stay near the surface, likely due to lower penetration power and stronger localised interaction, while lighter ions like Ar penetrate deeper into the material. This trend supports the hypothesis that ion mass influences the energy transfer efficiency and resulting implantation depth, which could be critical in tailoring surface modifications or etch profiles in atomic-scale processing\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_18_fig_3.jpg","caption":"FIG. 3. Free energy profile for the SE1 (blue) and SL1 (orange) reactions of $\\mathsf{aHfO_2}$ from 0 to $1000\\mathrm{K}$ at the pressures given in the text. T1 is where the SL and SE reactions cross over for the 80/16F model, and T2 is where spontaneous etching is preferred.","id":"test/atomic-layer-etching/simulation-usecase/18/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/18/fig_3","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/Origin of enhanced thermal atomic layer etching of amorphous HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":534,"height":486,"image_format":"jpeg","image_sha256":"47f12f35c3e5c7f1ea123d1f249b05e41ed81fdaa4b780f57858d2a603ecb620","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":6,"width":528,"height":478}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the change in Gibbs free energy (ΔG) per HfO₂ unit as a function of temperature. \\\"Preferred self-limiting\\\", \\\"Preferred etching\\\" and \\\"Purely etching\\\" regions are highlighted as well as T1 and T2 temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature [K] | SE1 | SL1 |\\n| --- | --- | --- |\\n| 0 | -1.3 | -3.8 |\\n| 200 | -1.3 | -3.2 |\\n| 400 | -1.3 | -2.4 |\\n| 600 | -1.2 | -1.8 |\\n| 800 | -1.1 | -0.8 |\\n| 1000 | -1.0 | 0.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"T2 is the point at which spontaneous etching is favoured.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For the SL1 reaction (orange line), the change in the Gibbs free energy values increases from -3.8 eV/HfO2 to nearly 0, as the temperature rises from 0 K to 1000 K.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the figure, self-limiting behavior is preferred from 0 to 718 K.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The temperature at which different self-limited conversion or spontaneous etching of aHfO2 occur can be observed. Therefore, it is possible to control the regime by adjusting the operating temperature.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_18_fig_4.jpg","caption":"FIG. 4. Free energy profiles of the spontaneous etching and self-limiting reactions for $\\mathrm{aHfO_2}$ . T1, T2, and T3 are the temperatures where the self-limiting and spontaneous etch reactions cross over for 80/16F, 100/20F, and 16O/32F models, respectively.","id":"test/atomic-layer-etching/simulation-usecase/18/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/18/fig_4","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/Origin of enhanced thermal atomic layer etching of amorphous HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":539,"height":470,"image_format":"jpeg","image_sha256":"7b99d3219ba4ed527a1ef55adb7cd5bb37dacc502946fbb8caf7ecded6b1ff9f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":6,"width":534,"height":464}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the Gibbs free energy (ΔG) change per HfO₂ molecule as a function of temperature. Three lines represent different hydrogen fluoride (HF) concentrations (16 HF, 20 HF) and (32 HF). Three different temperatures are highlighted T1=718 K, T2=770 K and T3=1302 K.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature [K] | 16HF | 20HF | 32HF |\\n| --- | --- | --- | --- |\\n| 0 | -3.8 | -3.8 | -5.2 |\\n| 400 | -2.2 | -2.2 | -4.0 |\\n| 800 | -0.8 | -1.0 | -2.6 |\\n| 1200 | 1.2 | 0.6 | -1.2 |\\n| 1600 | 3.0 | 2.2 | 0.4 |\\n| 2000 | 4.4 | 3.2 | 1.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Three different HF concentrations were studied: 16 HF, 20 HF and 32 HF.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Gibbs free energy increases with the temperature for all of the concentrations. All of them show the same behavior with the temperature.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the figure, the concentration of 16 HF shows higher Gibbs free energu values as a function of the temperature.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"T1, T2 and T3 represent the temperatures where the self-limiting and spontaneous etch reaction cross over for different models with different concentrations of O to F.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_4.jpg","caption":"Figure 4. Contributions to the reaction FEP of the SE1 reaction of $\\mathrm{HfO}_2$ shown in Table 1. $RT\\ln (Q)$ in gold accounts for the partial pressures of the reactants and products, enthalpic contribution $(\\Delta W)$ is given in dark blue, entropy term $(T\\Delta S)$ in gray, reaction energy $(\\Delta E)$ in light blue, the sum of reaction energy and zero-point energy change $(\\Delta E + \\Delta \\mathrm{ZPE})$ in brown, and reaction free energy $(\\Delta G)$ in green.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_4","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_4","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":441,"height":423,"image_format":"jpeg","image_sha256":"19196ecdb540ed33a84b152021daddf91de4d291e62f1fcfdfb2d4c11ce0609e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":9,"width":438,"height":413}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multiple-line chart showing the temperature dependence of individual contributions to the reaction free energy for the SE1 etching reaction of HfO₂ with HF. The plot separates constant energetic terms (ΔE, ΔE+ΔZPE) from temperature-dependent contributions (TΔS, ΔW, RT ln Q), illustrating how entropy and pressure effects progressively increase ΔG with temperature while the reaction remains exergonic across the range shown.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature [K] | ΔE [eV] | ΔE+ΔZPE [eV] | ΔG [eV] | TΔS [eV] | ΔW [eV] |\\n|---|---|---|---|---|---|\\n| 0 | ~ -0.9 | ~ -0.76 | ~ -0.76 | 0.0 | 0.0 |\\n| 200 | ~ -0.9 | ~ -0.76 | ~ -0.75 | ~ -0.05 | ~ -0.02 |\\n| 400 | ~ -0.9 | ~ -0.76 | ~ -0.68 | ~ -0.15 | ~ -0.06 |\\n| 600 | ~ -0.9 | ~ -0.76 | ~ -0.60 | ~ -0.25 | ~ -0.09 |\\n| 800 | ~ -0.9 | ~ -0.76 | ~ -0.52 | ~ -0.40 | ~ -0.11 |\\n| 1000 | ~ -0.9 | ~ -0.76 | ~ -0.44 | ~ -0.50 | ~ -0.13 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The entropy term, TΔS.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ΔE remains constant across the entire temperature range, reflecting its purely electronic nature. In contrast, TΔS becomes increasingly negative with temperature, contributing significantly to the upward shift in ΔG. This contrast highlights why entropy dominates the temperature dependence of reaction free energy.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ΔG remains negative throughout the plotted temperature range, indicating that the SE1 reaction is thermodynamically favorable under the conditions considered. Although the driving force decreases with temperature, the reaction does not become endergonic. This supports the feasibility of spontaneous etching at elevated temperatures.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_5.jpg","caption":"Figure 5. Free energy profiles for the SE1 (blue) and SL1 (orange) reactions of (a) $\\mathrm{HfO}_2$ and (b) $\\mathrm{ZrO}_2$ from 0 to $1000\\mathrm{K}$ at the pressures given in the text. $T_{1}$ is where the self-limiting and spontaneous etch reactions cross over for the 8O/16F model, and $T_{2}$ is where spontaneous etching is preferred.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_5","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_5","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":444,"height":798,"image_format":"jpeg","image_sha256":"6657ae071b8f3d67ad2f7121e41a3b8bb102159851c509db579070ec16ad1403","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":438,"height":392},{"panel_id":"b","x":0,"y":407,"width":442,"height":389}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Free-energy profiles for the SE1 (blue) and SL1 (orange) reactions of HfO₂ as functions of temperature. Below T₁ = 657 K, the self-limiting pathway is thermodynamically favored. Between T₁ and T₂ = 813 K, spontaneous etching becomes preferred. Above T₂, the self-limiting reaction is endergonic, and the system operates in a purely etching regime.\"},{\"panel_id\":\"b\",\"text\":\"Free-energy profiles for the SE1 and SL1 reactions of ZrO₂ showing analogous temperature-dependent behavior, with transitions at lower temperatures (T₁ = 534 K and T₂ = 770 K). Compared to HfO₂, ZrO₂ enters the preferred and purely etching regimes at lower temperatures, indicating reduced thermal stability of the self-limiting state.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature [K] | ΔG (SE1 - Blue) [eV] | ΔG (SL1 - Orange) [eV] | Condition |\\n|---|---|---|---|\\n| 0 | ~ -0.75 | ~ -3.0 | Start |\\n| 657 | ~ -0.6 | ~ -0.6 | T1 (Crossover) |\\n| 813 | ~ -0.55 | 0.0 | T2 (Zero crossing) |\\n| 1000 | ~ -0.45 | ~ +0.7 | End |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature [K] | ΔG (SE1 - Blue) [eV] | ΔG (SL1 - Orange) [eV] | Condition | \\n|---|---|---|---| \\n| 0 | ~ -1.0 | ~ -2.8 | Start | \\n| 534 | ~ -0.9 | ~ -0.9 | T1 (Crossover) | \\n| 770 | ~ -0.8 | 0.0 | T2 (Zero crossing) | \\n| 1000 | ~ -0.7 | ~ +0.8 | End |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Above 813 K, the free energy change (ΔG) for the self-limiting reaction becomes positive. This means the reaction becomes endergonic and is no longer thermodynamically spontaneous, indicating that a stable self-limiting layer cannot form under these conditions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The self-limiting reaction (SL1).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Temperatures below approximately 657 K are optimal, as the self-limiting reaction is thermodynamically favored while spontaneous etching is suppressed, allowing precise atomic layer removal.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Negative.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_6.jpg","caption":"Figure 6. Free energy profiles of the continuous etching and self-limiting reactions for $\\mathrm{HfO}_2$ . $T_{1}$ , $T_{2}$ , and $T_{3}$ are where the self-limiting and spontaneous etch reactions cross over for 16O/32F, 12O/24F, and 8O/16F models, respectively.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_6","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_6","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":444,"height":392,"image_format":"jpeg","image_sha256":"4c22d1599c095a7b7888312679e84c87ecb1ef081c073260c5566ac3f64d93d5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":6,"width":439,"height":384}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Line chart showing free-energy Delta G profiles for continuous etching and self-limiting reactions of HfO2 under three HF surface coverages (16 HF, 24 HF, and 32 HF) as functions of temperature. The figure identifies three crossover temperatures T1 = 429 K (16O/32F), T2 = 618 K (12O/24F), and T3 = 657K (8O/16F)—at which the self-limiting and spontaneous etch pathways become thermodynamically equivalent.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature [K] | Ref (Blue) [eV] | 32 HF (Yellow) [eV] | 24 HF (Gray) [eV] | 16 HF (Orange) [eV] | Note |\\n|---|---|---|---|---|---|\\n| 0 | ~ -0.8 | ~ -2.2 | ~ -2.8 | ~ -3.0 | Start |\\n| 429 | ~ -0.7 | ~ -0.7 | ~ -1.3 | ~ -1.5 | T1 (Crossover) |\\n| 618 | ~ -0.65 | 0.0 | ~ -0.6 | ~ -0.8 | T2 (Yellow Zero) |\\n| 657 | ~ -0.6 | ~ +0.2 | 0.0 | 0.0 | T3 (Gray/Orange Zero) |\\n| 1000 | ~ -0.5 | ~ +1.5 | ~ +0.8 | ~ +0.7 | End |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 32 HF surface model.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing HF coverage raises the free energy of the self-limiting pathway, causing it to intersect the continuous etching pathway at lower temperatures. This indicates that densely fluorinated surfaces destabilize the self-limiting configuration, narrowing the temperature window where controlled ALE can occur.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reference curve represents continuous etching, which is dominated by reaction energetics that vary weakly with surface coverage. In contrast, the self-limiting reactions depend strongly on surface fluorination, making their free energy more sensitive to temperature and coverage-dependent entropy contributions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 16 HF surface model is most suitable, as it maintains self-limiting behavior up to the highest temperature (T3 = 657K), offering a wider operational window before uncontrolled etching dominates.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_7.jpg","caption":"Figure 7. Free energy profiles of the continuous etching and self-limiting reactions for $\\mathrm{ZrO}_2$ . $T_{1}$ , $T_{2}$ , and $T_{3}$ are where the self-limiting and spontaneous etch reactions cross over for 16O/32F, 12O/24F, and 8O/16F models, respectively.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_7","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_7","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":406,"height":358,"image_format":"jpeg","image_sha256":"01cbfd099c62b9657cf85c7bd0f25b2f38e18b8d4e11eb00211e883917afce90","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":401,"height":353}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Line chart showing free-energy (ΔG) profiles for continuous etching and self-limiting reactions of ZrO2 for three HF surface models (16 HF, 24 HF, and 32 HF) as functions of temperature. The figure marks three crossover temperatures—T1 = 273 K, T2 = 502 K, and T3 = 534 K—corresponding to the 16O/32F, 12O/24F, and 8O/16F models, respectively, where self-limiting and spontaneous etch pathways become thermodynamically equivalent.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature [K] | Ref (Blue) [eV] | 32 HF (Yellow) [eV] | 24 HF (Gray) [eV] | 16 HF (Orange) [eV] | Note |\\n|---|---|---|---|---|---|\\n| 0 | ~ -1.0 | ~ -1.9 | ~ -2.7 | ~ -2.8 | Start |\\n| 273 | ~ -0.95 | ~ -0.95 | ~ -1.8 | ~ -1.9 | T1 (Crossover) |\\n| 502 | ~ -0.9 | 0.0 | ~ -1.0 | ~ -1.1 | T2 (Yellow Zero) |\\n| 534 | ~ -0.9 | ~ +0.2 | 0.0 | 0.0 | T3 (Gray/Orange Zero) |\\n| 1000 | ~ -0.7 | ~ +1.8 | ~ +0.9 | ~ +0.8 | End |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 32 HF surface model.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Higher HF surface coverage raises the free energy of the self-limiting pathway, causing it to intersect the continuous etching pathway at lower temperatures. This indicates that heavily fluorinated surfaces destabilize the self-limiting configuration more rapidly as temperature increases.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1) 32 HF (smallest range)\\n2) 24 HF\\n3) 16 HF (largest range)\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 16 HF surface model is most suitable, as it maintains a negative ΔG for self-limiting reactions up to the highest temperature (T3 = 534 K), providing the widest operational window merging stability with temperature tolerance.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig12.jpg","caption":"FIG.12. G free energy profiles of CVE1, CVE2, and SL reactions vs temperature at a constant HF reactant pressure of $0.2$ Torr and a product pressure of $0.01$ Torr. SL reaction becomes endergonic at $110\\mathrm{K}$ .","id":"test/atomic-layer-etching/simulation-usecase/28/fig12","sample_id":"atomic-layer-etching/simulation-usecase/28/fig12","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":666,"height":609,"image_format":"jpeg","image_sha256":"63b26bbe6337354a2ddff1d5b8ac610dcaade4fadd6c0b1939b57806d9cf6278","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":662,"height":606}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Thermodynamic profile comparing the Gibbs free energy (ΔG) of three etching mechanisms (CVE1, CVE2, SL) versus temperature. CVE1 and CVE2 remain exergonic (ΔG < 0) across the entire temperature range. The SL reaction transitions from exergonic to endergonic at 110 K, becoming thermodynamically unfavorable at higher temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (K) | ΔG (eV) - SL(Green) | ΔG (eV) - CVE2 (Blue) | ΔG (eV)- CVE1 (Red) |\\n|-----------------|---------------------|------------------------|-------------------------|\\n| 0 | -0.5 | -1.0 | -1.3 |\\n| 110 | 0.0 | -1.1 | -1.5 |\\n| 200 | 0.5 | -1.1 | -1.6 |\\n| 400 | 1.8 | -1.1 | -1.7 |\\n| 600 | 3.0 | -1.1 | -1.8 |\\n| 800 | 4.2 | -1.2 | -1.9 |\\n| 1000 | 5.2 | -1.2 | -2.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Above 110 K, the two mechanisms diverge significantly. The SL reaction becomes endergonic (ΔG > 0), meaning it is thermodynamically unfavorable and unlikely to proceed spontaneously. In contrast, the CVE1 reaction remains strongly exergonic (ΔG becoming more negative), indicating it is the thermodynamically preferred and dominant etching pathway at higher temperatures.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"110 K\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"CVE1, CVE2, SL\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, it remains exergonic (ΔG < 0) throughout the entire range.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_12.jpg","caption":"Fig. 12. Graphical illustrations depicting the influence of various R2R controller algorithms on an environment that is introduced to a mild kinetic shift disturbance of 0.8 on the input parameters including the (a) HF flow rate, (b) TMA flow rate, (c) substrate velocity, which are computed from the output variable, (d) etching per cycle (EPC).","id":"test/atomic-layer-etching/simulation-usecase/34/fig_12","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_12","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1011,"height":841,"image_format":"jpeg","image_sha256":"a49a4d8333313c0029c0c343945861c33aa58ae743486a5394094766f7404b88","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":185,"y":0,"width":650,"height":40},{"panel_id":"b","x":514,"y":55,"width":497,"height":380},{"panel_id":"c","x":9,"y":457,"width":497,"height":384},{"panel_id":"d","x":516,"y":462,"width":495,"height":379}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart shows HF flow rate control over batch number. The EWMA and ANN predictions initially deviate slightly from the target but converge toward it as batches progress.\"},{\"panel_id\":\"b\",\"text\":\"The multiple line chart shows TMA flow rate adjustment across batches. Early deviations are reduced over time, with ANN tracking the target more closely than the EWMA curves.\"},{\"panel_id\":\"c\",\"text\":\"The multiple line chart shows substrate velocity over batch number. Initial oscillations decrease with batch number, and all methods converge toward the target velocity.\"},{\"panel_id\":\"d\",\"text\":\"The multiple line chart shows EPC over batch number. Both EWMA and ANN predictions converge toward the target EPC, with ANN exhibiting faster stabilization.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Batch number | Target | EWMA (λ=0.7) | EWMA (λ=0.3) | ANN |\\n|--------------|--------|--------------|--------------|-------|\\n| 1 | ~20 | ~20.2 | ~19.8 | ~20.1 |\\n| 10 | ~20 | ~20.1 | ~19.9 | ~20.0 |\\n| 20 | ~20 | ~20.0 | ~20.0 | ~20.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Batch number | Target | EWMA (λ=0.7) | EWMA (λ=0.3) | ANN |\\n|--------------|--------|--------------|--------------|-------|\\n| 1 | ~45 | ~47 | ~43 | ~45 |\\n| 10 | ~45 | ~46 | ~44 | ~45 |\\n| 20 | ~45 | ~45 | ~45 | ~45 |\"},{\"panel_id\":\"c\",\"text\":\"| Batch number | Target | EWMA (λ=0.7) | EWMA (λ=0.3) | ANN |\\n|--------------|--------|--------------|--------------|-------|\\n| 1 | ~70 | ~75 | ~65 | ~70 |\\n| 10 | ~70 | ~72 | ~68 | ~70 |\\n| 20 | ~70 | ~70 | ~70 | ~70 |\"},{\"panel_id\":\"d\",\"text\":\"| Batch number | Target | EWMA (λ=0.7) | EWMA (λ=0.3) | ANN |\\n|--------------|--------|--------------|--------------|-------|\\n| 1 | ~0.04 | ~0.06 | ~0.03 | ~0.04 |\\n| 10 | ~0.04 | ~0.05 | ~0.04 | ~0.04 |\\n| 20 | ~0.04 | ~0.04 | ~0.04 | ~0.04 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both methods show larger deviations from the target. At early batches methods progressively converge as batch number increases. The ANN curves generally stabilize faster and exhibit smaller oscillations compared to the EWMA curves.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"HF flow rate, TMA flow rate, Substrate velocity, Etching per cycle (EPC\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Batch number.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_13.jpg","caption":"Fig. 13. Graphical illustrations depicting the influence of various R2R controller algorithms on an environment that is introduced to a severe kinetic shift disturbance of 0.6 on the input parameters including the (a) HF flow rate, (b) TMA flow rate, and (c) substrate velocity, which are computed from the output variable (d) etching per cycle (EPC).","id":"test/atomic-layer-etching/simulation-usecase/34/fig_13","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_13","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_13.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1020,"height":842,"image_format":"jpeg","image_sha256":"54221088f5425cb59ddcf8de94ecf56065b92d41f3dea8655b745059b70e90bf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":190,"y":0,"width":648,"height":39},{"panel_id":"b","x":518,"y":54,"width":502,"height":380},{"panel_id":"c","x":10,"y":457,"width":499,"height":385},{"panel_id":"d","x":519,"y":461,"width":501,"height":381}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart shows HF flow rate control over batch number. EWMA initially deviates from the target, while ANN tracks the target more closely and stabilizes faster.\"},{\"panel_id\":\"b\",\"text\":\"The multiple line chart shows TMA flow rate over batch number. Early fluctuations decrease with batch number, and the ANN method maintains values closest to the target.\"},{\"panel_id\":\"c\",\"text\":\"The multiple line chart shows substrate velocity over batch number. Initial oscillations are damped over time, with ANN converging to the target more quickly than EWMA.\"},{\"panel_id\":\"d\",\"text\":\"The multiple line chart shows EPC over batch number. All methods converge toward the target EPC, with ANN exhibiting the smallest deviation during stabilization.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Batch number | Target | EWMA (λ=0.7) | EWMA (λ=0.3) | ANN |\\n|--------------|--------|--------------|--------------|-------|\\n| 1 | ~20 | ~21.0 | ~20.5 | ~20.0 |\\n| 10 | ~20 | ~20.3 | ~20.1 | ~20.0 |\\n| 20 | ~20 | ~20.0 | ~20.0 | ~20.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Batch number | Target | EWMA (λ=0.7) | EWMA (λ=0.3) | ANN |\\n|--------------|--------|--------------|--------------|-------|\\n| 1 | ~45 | ~47 | ~44 | ~45 |\\n| 10 | ~45 | ~46 | ~44.5 | ~45 |\\n| 20 | ~45 | ~45 | ~45 | ~45 |\"},{\"panel_id\":\"c\",\"text\":\"| Batch number | Target | EWMA (λ=0.7) | EWMA (λ=0.3) | ANN |\\n|--------------|--------|--------------|--------------|-------|\\n| 1 | ~70 | ~75 | ~65 | ~70 |\\n| 10 | ~70 | ~72 | ~68 | ~70 |\\n| 20 | ~70 | ~70 | ~70 | ~70 |\"},{\"panel_id\":\"d\",\"text\":\"| Batch number | Target | EWMA (λ=0.7) | EWMA (λ=0.3) | ANN |\\n|--------------|--------|--------------|--------------|-------|\\n| 1 | ~0.35 | ~0.38 | ~0.33 | ~0.35 |\\n| 10 | ~0.35 | ~0.36 | ~0.34 | ~0.35 |\\n| 20 | ~0.35 | ~0.35 | ~0.35 | ~0.35 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both methods reduce deviations over batch number, but ANN consistently tracks the target more closely and stabilizes faster than EWMA, which shows larger initial oscillations.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Batch Number.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"HF flow rate, TMA flow rate, Substrate velocity, Etching per cycle\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_15.jpg","caption":"Fig. 15. Graphical illustrations depicting the influence of various R2R controller algorithms on an environment that is introduced to a kinetic drift disturbance on the input parameters including the (a) HF flow rate, (b) TMA flow rate, and (c) substrate velocity, which are computed from the output variable (d) etching per cycle (EPC).","id":"test/atomic-layer-etching/simulation-usecase/34/fig_15","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_15","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_15.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1011,"height":839,"image_format":"jpeg","image_sha256":"1ffcd13765d1dcfa5fe4f3dc9e3401a76450bcc7875873d329ce424c6ba1a6d6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":88,"y":0,"width":847,"height":39},{"panel_id":"b","x":516,"y":54,"width":495,"height":379},{"panel_id":"c","x":9,"y":456,"width":498,"height":383},{"panel_id":"d","x":516,"y":460,"width":495,"height":379}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart shows HF flow rate control over batch number. Without control, the flow rate drifts upward, while EWMA partially corrects the drift and ANN maintains the flow rate close to the target.\"},{\"panel_id\":\"b\",\"text\":\"The multiple line chart shows TMA flow rate over batch number. The no-control case increases steadily, whereas the ANN tracks the target closely and EWMA reduces but does not eliminate the drift.\"},{\"panel_id\":\"c\",\"text\":\"The multiple line chart shows substrate velocity over batch number. Velocity decreases significantly without control, while EWMA mitigates the drop and ANN maintains values near the target.\"},{\"panel_id\":\"d\",\"text\":\"The multiple line chart shows EPC over batch number. EPC declines strongly in the no-control case, while both EWMA and ANN stabilize EPC near the target, with ANN showing the smallest deviation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Batch number | Target | EWMA | ANN | No control |\\n|--------------|--------|------|------|------------|\\n| 1 | ~20 | ~21 | ~20 | ~22 |\\n| 10 | ~20 | ~22 | ~20 | ~24 |\\n| 20 | ~20 | ~23 | ~20 | ~25 |\"},{\"panel_id\":\"b\",\"text\":\"| Batch number | Target | EWMA | ANN | No control |\\n|--------------|--------|------|------|------------|\\n| 1 | ~45 | ~46 | ~45 | ~48 |\\n| 10 | ~45 | ~47 | ~45 | ~50 |\\n| 20 | ~45 | ~48 | ~45 | ~52 |\"},{\"panel_id\":\"c\",\"text\":\"| Batch number | Target | EWMA | ANN | No control |\\n|--------------|--------|------|------|------------|\\n| 1 | ~70 | ~72 | ~70 | ~75 |\\n| 10 | ~70 | ~68 | ~70 | ~65 |\\n| 20 | ~70 | ~65 | ~70 | ~55 |\"},{\"panel_id\":\"d\",\"text\":\"| Batch number | Target | EWMA | ANN | No control |\\n|--------------|--------|------|------|------------|\\n| 1 | ~0.35 | ~0.36| ~0.35| ~0.34 |\\n| 10 | ~0.35 | ~0.33| ~0.35| ~0.28 |\\n| 20 | ~0.35 | ~0.32| ~0.35| ~0.20 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In all panels, the no-control case shows significant drift away from the target over batch number. EWMA reduces the drift but still deviates over time. The ANN consistently maintains the variables closest to their target values.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Batch number.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"HF flow rate, TMA flow rate, Substrate velocity, Etching per cycle (EPC)\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_7_fig_4.jpg","caption":"FIG. 4. Free energy profiles of the overall etch reactions given in Table I. Solid lines correspond to the etch of an adatom and dotted lines correspond to the etch of a surface atom.","id":"test/atomic-layer-etching/simulation-usecase/7/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/7/fig_4","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/In silico design of a thermal atomic layer etch process of cobalt.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":653,"height":605,"image_format":"jpeg","image_sha256":"d1f971c226560860424bb46b213f29d205db5f0dec0d2cb78d582e2ca5c976d6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":653,"height":605}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a line chart that plots the Gibbs free energy change (ΔG) per cobalt atom as a function of temperature (T) for eight surface reactions involving different precursors: propene, butyne, silane, and trimethylsilane (TMS). Each precursor is represented under two surface states, adsorbed (-a) and saturated (-s). The chart reveals that ΔG increases linearly with temperature for all cases, with the magnitude of change varying among the precursors. Propene and TMS show the most favorable ΔG values (more negative) across the full temperature range, while butyne shows the least favorable thermodynamics. The comparison between adsorbed and saturated cases demonstrates consistent trends across species.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| T [K] | Propene-a | Butyne-a | Silane-a | TMS-a | Propene-s | Butyne-s | Silane-s | TMS-s |\\n|---|---|---|---|---|---|---|---|---|\\n| 0 | -9.5 | -2.5 | -6.5 | -8.5 | -9.5 | -2.5 | -6.5 | -8.5 |\\n| 250 | -7.5 | -1.5 | -4.5 | -6.5 | -7.5 | -1.5 | -4.5 | -6.5 |\\n| 500 | -5.5 | -0.5 | -2.5 | -4.5 | -5.5 | -0.5 | -2.5 | -4.5 |\\n| 750 | -3.5 | 0.5 | -0.5 | -2.5 | -3.5 | 0.5 | -0.5 | -2.5 |\\n| 1000 | -1.5 | 1.5 | 1.5 | 0.5 | -1.5 | 1.5 | 1.5 | 0.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ΔG values for both propene and butyne increase with temperature, indicating that the thermodynamic favorability of surface binding or reaction decreases at higher temperatures. Propene shows significantly more negative ΔG values than butyne across the entire temperature range, suggesting it is more thermodynamically favorable for surface reactions. The difference between the adsorbed (a) and saturated (s) states for both molecules is minimal, implying that the surface termination state has a limited effect on the general thermodynamic trend. This suggests that propene may be a more suitable candidate for temperature-sensitive surface chemistry applications like selective etching or deposition.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"a -2.5 eV/Co\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Propene-a, Propene-s, TMS-a, TMS-s\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_7_fig_6.jpg","caption":"FIG. 6. (a) Free energy profiles of the individual reaction steps for the ALE process with H desorption after propene adsorption (in dotted lines) or no desorption of H after propene adsorption (in solid lines) given in Fig. 5. (b) The pressure-temperature process window of the complete ALE cycle (H desorbed) computed by considering different $\\ln (Q)$ values for each temperature. The red line indicated the CO decomposition temperature on the Co surface. The region marked by the black rectangle gives the Co ALE process window when propene and CO are used as reactants.","id":"test/atomic-layer-etching/simulation-usecase/7/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/7/fig_6","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"contour heatmap"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/In silico design of a thermal atomic layer etch process of cobalt.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1356,"height":620,"image_format":"jpeg","image_sha256":"de52a3b4c8c82f64e86a3a1d1df5ed72daad26c85f904e0f8db546f2cd79baab","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":36,"width":602,"height":580},{"panel_id":"b","x":640,"y":17,"width":602,"height":582}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure (a) presents a multi-line chart showing the Gibbs free energy (ΔG) as a function of temperature for different surface reaction steps involved in propene chemistry on cobalt. These steps include propene adsorption, its dissociation, and byproduct formation such as H₂ and CO₂. The slope and relative positioning of the lines indicate which reactions become more or less thermodynamically favorable with increasing temperature.\"},{\"panel_id\":\"b\",\"text\":\"Figure (b) is a heatmap that maps the equilibrium constant (lnQ) over a temperature-pressure space. The diagram includes a shaded process window indicating practical temperature and pressure ranges where the targeted surface reactions may be viable, providing a framework for selecting operating conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature [K] | ΔG [eV / Co] |\\n|---|---|\\n| 0 | -6 |\\n| 200 | -5 |\\n| 400 | -4 |\\n| 600 | -3 |\\n| 800 | -2 |\\n| 1000 | -1 |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature [K] | Equilibrium constant: lnQ |\\n|---|---|\\n| 0 | -75 |\\n| 200 | -50 |\\n| 400 | -25 |\\n| 600 | 0 |\\n| 800 | 25 |\\n| 1000 | 50 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ΔG trends in figure (a) show which reaction steps become more or less favorable as temperature increases. For instance, propene adsorption has a negative ΔG at low temperatures, indicating thermodynamic favourability, while certain desorption reactions (e.g., CO₂ release) become favorable only at higher temperatures. Figure (b) complements this by showing the process window where lnQ indicates strong driving forces for reactions (lnQ ≪ 0) or equilibrium conditions (lnQ ≈ 0). By aligning these trends, one can identify temperature-pressure zones where specific reaction pathways are both thermodynamically favorable and kinetically accessible. This approach enables the rational design of conditions that favor desired surface terminations or product release while suppressing unwanted side reactions\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 750 K.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Propene adsorption, dissociative H₂ adsorption, CO₂ adsorption, surface reaction of volatiles.\"}]}]"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_13.jpg","caption":"FIG. 13. (Color online) Results from Monte Carlo simulations investigating the influence of surface recombination of radicals during plasma-assisted ALD (Ref. 304). (a) Equivalent thickness profile in a trench of aspect ratio 10 for different deposition regimes, obtained for various combinations of values for the sticking probability, $s$ , and surface recombination probability, $r$ . The positions within the trench labeled 0 and $100\\%$ correspond to the trench opening and trench bottom, respectively. Note that both recombination-limited cases show almost perfect overlap. (b) The dose required to reach saturation in trenches with aspect ratios of 10 and 30 for nonzero values of $r$ . This dose is normalized to the dose required to reach saturation in these trenches when $r = 0$ . For the simulations $s = 0.01$ was assumed. From H.C.M. Knoops et al., J. Electrochem. Soc. 157, G241 (2010). Reproduced with permission of ECS—The Electrochemical Society.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_13","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_13","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Thickness profiles across a trench reveal how different growth regimes—reaction-limited, diffusion-limited, and recombination-limited—affect uniformity, with recombination-limited cases showing more variation along the depth.\"},{\"panel_id\":\"b\",\"text\":\"The dose necessary for saturation increases with higher surface recombination probability, and this effect becomes more pronounced at higher aspect ratios (AR = 30).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Distance into Trench (%) | Reaction-limited (s = 0.01; r = 0) | Diffusion-limited (s = 1; r = 0) | Recombination-limited (s = 0.01; r = 0.9) | Recombination-limited (s = 1; r = 0.9) |\\n|--------------------------|------------------------------------|----------------------------------|-------------------------------------------|----------------------------------------|\\n| 0 | 100 | 100 | 100 | 100 | \\n| 20 | 98 | 100 | 95 | 97 |\\n| 40 | 95 | 99 | 90 | 93 |\\n| 60 | 92 | 98 | 88 | 91 |\\n| 80 | 90 | 98 | 86 | 90 |\\n| 100 | 92 | 99 | 88 | 92 |\"},{\"panel_id\":\"b\",\"text\":\"| Surface Recombination Probability (r) | Dose Necessary for Saturation (Aspect Ratio = 10) | Dose Necessary for Saturation (Aspect Ratio = 30) |\\n|---------------------------------------|---------------------------------------------------|---------------------------------------------------|\\n| 0.00 | 1 | 1 |\\n| 0.05 | 3 | 10 |\\n| 0.10 | 6 | 25 |\\n| 0.15 | 10 | 50 |\\n| 0.20 | 20 | 70 |\\n| 0.25 | 40 | 85 | \\n| 0.30 | 60 | 100 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Surface recombination probability (r), Aspect ratio of the structure\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Thickness remains nearly uniform for diffusion-limited and reaction-limited processes but decreases notably deeper into the trench for recombination-limited conditions, indicating non-uniform film growth.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Film thickness (%) as a function of trench depth.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":17,"y":14,"width":670,"height":508},{"panel_id":"b","x":5,"y":556,"width":682,"height":472}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_13.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":689,"height":1033,"image_format":"jpeg","image_sha256":"b6751d4682ee73e5c954d57032cb22cc25c9ad21eeb17b4363db8c865e9080ac","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_14.jpg","caption":"FIG. 14. (Color online) Experiments proving that VUV radiation from the plasma affects the surface passivation of crystalline Si by $\\mathrm{Al}_2\\mathrm{O}_3$ when deposited by plasma-assisted ALD (Refs. 43, 303). After annealing, the wafers were exposed to an $\\mathrm{O_2}$ plasma for various exposure times. (a) The effective charge carrier lifetimes degraded for increasing exposure times at a rate which increased with increasing VUV radiation present in the plasma (higher intensity for higher power and/or lower pressure). (b) Results are also given for the situation in which the substrate is covered by quartz and $\\mathrm{MgF_2}$ windows that respectively block and do not block the VUV photons of $9.5\\mathrm{eV}$ . From H.B. Profijt et al., ECS Trans. 33, 61 (2010). Reproduced with permission of ECS—The Electrochemical Society.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_14","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_14","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Increasing plasma power accelerates carrier lifetime reduction, with 500 W exposure causing rapid degradation compared to 100 W.\"},{\"panel_id\":\"b\",\"text\":\"The use of different chamber windows (no window, quartz, MgF₂) alters the plasma interaction with the surface, showing that optical transparency and window material strongly influence degradation rates.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| O₂ Plasma Exposure Time (s) | 100 W, 7.5 mTorr | 500 W, 7.5 mTorr | 100 W, 7.5 mTorr (quartz window) |\\n|----------------------------|------------------|------------------|----------------------------------|\\n| 0 | 10.0 | 9.8 | 10.0 |\\n| 25 | 6.5 | 4.5 | 9.5 |\\n| 50 | 2.0 | 1.0 | 9.0 |\\n| 75 | 0.9 | 0.6 | 8.5 |\\n| 100 | 0.5 | 0.3 | 8.0 |\\n| 125 | 0.3 | 0.2 | 7.5 |\\n| 150 | 0.2 | 0.1 | 7.0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Effective carrier lifetime (ms).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The effective carrier lifetime decreases exponentially with increasing O₂ plasma exposure time, with higher plasma power or direct exposure (no window) causing faster degradation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Plasma power (100 W and 500 W), Pressure (7.5 mTorr), Window material (none, quartz, MgF₂)\"}]}]","bbox":[{"panel_id":"a","x":42,"y":11,"width":632,"height":462},{"panel_id":"b","x":40,"y":511,"width":636,"height":466}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_14.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":678,"height":978,"image_format":"jpeg","image_sha256":"eae3238a3e3999c1efb9ceab9a2c05ea03521258070446004a7458a8396d7b2d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_16.jpg","caption":"FIG. 16. Barrier failure temperatures for TaN and Ta films deposited by PVD and plasma-assisted ALD (Refs. 204, 219). After deposition the TaN and Ta layers were capped by $200 \\mathrm{nm}$ thick Cu films using the PVD technique. Barrier failure temperatures were determined by monitoring the disappearance of the Cu (111) peak by X-ray diffraction measurements. The ALD films were deposited using an $\\mathrm{H}_2 / \\mathrm{N}_2$ plasma film in TaN and an $\\mathrm{H}_2$ plasma for Ta. From H. Kim et al., J. Appl. Phys. 95, 5848 (2004). Reprinted with permission. Copyright 2004, American Institute of Physics.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_16","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_16","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows how the failure temperature increases with film thickness for PE-ALD and PVD TaN and Ta films. Across all materials, thicker films withstand higher temperatures, with ALD-based films generally exhibiting higher thermal stability than their PVD counterparts.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Film thickness (nm) | PE-ALD TaN | PVD TaN | PE-ALD Ta | PVD Ta |\\n|---|---|---|---|---|\\n| 0 | 580 | 590 | 600 | 610 |\\n| 5 | 670 | 680 | 690 | 700 |\\n| 10 | 760 | 770 | 780 | 790 |\\n| 15 | 850 | 860 | 870 | 880 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Failure temperature increases with film thickness for all materials, with PE-ALD films exhibiting higher stability compared to PVD films across the measured range.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Failure temperature (°C).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"(PE-ALD) TaN, (PVD), TaN\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":605,"height":447}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_16.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":605,"height":447,"image_format":"jpeg","image_sha256":"7f5f55ebe1f0d3ac33f9b16ea3ace68c7acdad2c5c0a37f2a80fbe87e5cb4d3f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_4.jpg","caption":"Fig. 4. (Color online) Ion energy distribution as measured by a retarding field energy analyzer (RFEA) in $\\mathrm{O}_2$ , $\\mathrm{H}_2$ and $\\mathrm{N}_2$ plasmas (operating pressure: 8 mTorr; plasma power: 100 W) used for remote plasma-assisted ALD. The RFEA was positioned at the substrate stage. Measurements were performed in the home-built ALD-I reactor installed at Eindhoven University of Technology. Due to non-ideal effects such as capacitive coupling, the ion energies measured are higher than those measured in the Oxford Instruments FlexAL reactor, which are reported elsewhere (Ref. 303).","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_4","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents ion energy distribution curves for O₂, H₂, and N₂ plasmas. Each plasma type exhibits a peak in ion energy distribution near 30–35 eV, with the H₂ plasma showing the highest intensity, O₂ plasma a moderate peak, and N₂ plasma the lowest distribution. This comparison highlights differences in ion energetics between the three plasma environments.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion Energy (eV) | O₂ Plasma (a.u.) | H₂ Plasma (a.u.) | N₂ Plasma (a.u.) |\\n|-----------------|------------------|------------------|------------------|\\n| 0 | 0.00 | 0.00 | 0.00 |\\n| 10 | 0.05 | 0.10 | 0.00 |\\n| 20 | 0.30 | 0.40 | 0.10 |\\n| 25 | 0.60 | 0.80 | 0.20 |\\n| 30 | 0.90 | 1.00 | 0.30 |\\n| 35 | 0.80 | 0.70 | 0.20 |\\n| 40 | 0.20 | 0.20 | 0.10 |\\n| 50 | 0.00 | 0.00 | 0.00 |\\n| 60 | 0.00 | 0.00 | 0.00 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The H₂ plasma shows the highest ion energy distribution peak around 30–35 eV, followed by O₂ plasma with a moderate peak and N₂ plasma with the lowest intensity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ion energy distribution (arbitrary units.)\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"H₂ plasma high energy, O₂ moderate, N₂ low energy and ion impact\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":606,"height":472}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":606,"height":472,"image_format":"jpeg","image_sha256":"33337cd6ce6b8f9ae4de2c78e45af55d0edd55f8d5cca3d0514b4dc0fd8d464a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_8.jpg","caption":"FiG. 8. (Color online) Growth per cycle of $\\mathrm{Al}_2\\mathrm{O}_3$ films as a function of the substrate temperature. The films were deposited by plasma-assisted ALD ( $\\mathrm{O}_2$ plasma) and thermal ALD ( $\\mathrm{H}_2\\mathrm{O}$ ). Two different ALD reactors were used; one operating at $15\\mathrm{mTorr}$ and the other at $170\\mathrm{mTorr}$ (Refs. 43, 323). From S.E. Potts et al., J. Electrochem. Soc. 157, P66 (2010). Reproduced by permission of ECS—The Electrochemical Society.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_8","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart compares growth per cycle as a function of deposition temperature for both O₂ plasma and thermal (H₂O) ALD processes under two pressure conditions (15 mTorr and 170 mTorr). Growth per cycle decreases with temperature for plasma processes, while remaining nearly constant for thermal ALD. Higher pressure generally results in slightly higher growth rates.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition Temperature (°C) | O₂ Plasma (170 mTorr) | O₂ Plasma (15 mTorr) | Thermal (H₂O, 170 mTorr) | Thermal (H₂O, 15 mTorr) |\\n|-----------------------------|----------------------|----------------------|---------------------------|--------------------------|\\n| 50 | 1.7 | 1.6 | 0.8 | 0.7 |\\n| 100 | 1.6 | 1.5 | 0.8 | 0.8 |\\n| 150 | 1.4 | 1.3 | 0.9 | 0.9 |\\n| 200 | 1.2 | 1.1 | 0.9 | 0.9 |\\n| 250 | 1.1 | 1.0 | 0.9 | 0.9 |\\n| 300 | 1.0 | 0.9 | 0.9 | 0.9 |\\n| 350 | 0.9 | 0.8 | 0.9 | 0.9 |\\n| 400 | 0.8 | 0.7 | 0.9 | 0.9 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The growth per cycle decreases with temperature for O₂ plasma ALD but remains almost constant for thermal (H₂O) ALD, indicating that plasma-based processes are more temperature-sensitive.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"O₂ plasma 170 mTorr, O₂ plasma 15 mTorr, H₂O thermal 170 mTorr, H₂O thermal 15 mTorr\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Growth per cycle (Å/cycle).\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":520}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":675,"height":520,"image_format":"jpeg","image_sha256":"7fa62c00a7f742804a3143a2cd7c472f3775129593bd67d3726da42f1e5b382f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_9.jpg","caption":"FiG. 9. (Color online) Growth per cycle of $\\mathrm{TiO}_2$ films as a function of the substrate temperature. Plasma-assisted ALD was carried out using $\\mathrm{Ti(O^iPr)_4}$ , $\\mathrm{Ti(Cp^Me)(O^iPr)_3}$ , $\\mathrm{Ti(Cp^*)OMe)_3}$ , and $\\mathrm{Ti(Cp^Me)(NMe_2)_3}$ as precursors in combination with an $\\mathrm{O}_2$ plasma (Refs. 56, 248). Data for thermal ALD with $\\mathrm{H}_2\\mathrm{O}$ (Ref. 325) and $\\mathrm{O}_3$ (Ref. 324) using the widely employed $\\mathrm{Ti(O^iPr)_4}$ precursor are given for comparison. From S.E. Potts et al., J. Electrochem. Soc. 157, P66 (2010). Reproduced by permission of ECS—The Electrochemical Society.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_9","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_9","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart compares growth per cycle for several titanium precursors under both plasma and thermal ALD conditions. Plasma ALD processes, using precursors such as Ti(OPr)₄ and Ti(Cp*) derivatives, maintain higher and more stable growth rates across all temperatures, while thermal ALD processes show minimal growth and stronger temperature dependence.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition Temperature (°C) | Ti(OPr)₄ (Plasma) | Ti(Cp*)Y(OPr)₄ (Plasma) | Ti(Cp*)Y(OMe)₄ (Plasma) | Ti(Cp*)X(NMe₂)₃ (Plasma) | Ti(OPr)₄ + H₂O (Thermal) | Ti(OPr)₄ + O₃ (Thermal) |\\n|-----------------------------|-------------------|--------------------------|--------------------------|---------------------------|---------------------------|--------------------------|\\n| 50 | 0.65 | 0.72 | 0.68 | 1.10 | 0.05 | 0.12 |\\n| 100 | 0.64 | 0.70 | 0.67 | 1.08 | 0.04 | 0.11 |\\n| 150 | 0.63 | 0.68 | 0.65 | 1.07 | 0.03 | 0.10 |\\n| 200 | 0.62 | 0.67 | 0.64 | 1.05 | 0.03 | 0.09 |\\n| 250 | 0.62 | 0.67 | 0.64 | 1.04 | 0.03 | 0.09 |\\n| 300 | 0.61 | 0.66 | 0.63 | 1.04 | 0.02 | 0.08 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Plasma ALD shows consistently higher and more stable growth per cycle across all deposition temperatures, while thermal ALD yields lower growth rates that decline further with temperature.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Deposition temperature.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ti(OPr)₄ plasma, Ti(Cp*)Y(OPr)₄ plasma, Ti(Cp*)Y(OMe)₄ plasma, Ti(Cp*)X(NMe₂)₃ plasma, Ti(OPr)₄ + H₂O thermal, Ti(OPr)₄ + O₃ thermal.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":681,"height":525}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":681,"height":525,"image_format":"jpeg","image_sha256":"89831d0049dc299f6c32ec14efd020630b262814d55c708174cde431e3c5350a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_15_fig_2.jpg","caption":"FIG. 2. Normalized capacitance of BST films grown on $\\mathrm{MgO}$ $\\mathrm{TiO_2 / Si}$ and $\\mathrm{Ta}_2\\mathrm{O}_5 / \\mathrm{Si}$ substrates.","id":"test/atomic-layer-deposition/experimental-usecase/15/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/15/fig_2","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the normalized capacitance of BST films with different dielectric layers (BST/TiO2/Si, BST/Ta2O5/Si, BST/MgO) as a function of applied voltage. The tunability of capacitance is indicated at specific voltages.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Applied Voltage (V) | Normalized Capacitance |\\n|---------------------|------------------------|\\n| 0 | 1.0 |\\n| 5 | 0.7 |\\n| 10 | 0.4 |\\n| 35 | 0.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At an applied voltage of 10 V, the tunability values of BST films grown on Ta2O5/Si and TiO2 /Si were 53.1% and 72.9%, respectively and 20.7% for films on MgO single crystal substrate.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Improved tunability and, thus, higher frequency tuning agility, is possible with TiO2 or Ta2O5 buffer layers which increase the overall average dielectric constant and thereby minimize electric field attenuation\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"BST films grown on MgO single crystal substrates showed highly (100) preferred orientation and reached a tunability of only 41.6% with a much higher applied voltage of 35 V. The measured\\ncapacitance of BST grown on TiO2/Si,Ta2O5 / Si, and MgO substrates at zero bias voltage was 125.8, 30.8, and 9.95 pF, respectively. In comparison to parallel-plate capacitors, coplanar designs generally require higher control voltages and\\noffer lower tunability, potential disadvantages of the IDC structure. The drive voltage needed to obtain appropriate tunability is very high in the BST/MgO structure given the low dielectric constant of the MgO single crystal substrate\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":572,"height":566}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/Il-Doo Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":572,"height":567,"image_format":"jpeg","image_sha256":"1d59fc6a4a86573f6a7b9735ad1cdc0fe0f248b22080cd2ed01684bf61358273","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_19_fig1.jpg","caption":"Fig.1 Deposition rate of $\\mathrm{ZrO_2}$ thin films from the $(\\mathrm{CpMe})_2\\mathrm{Zr(OMe)Me}$ and $(\\mathrm{CpMe})_2\\mathrm{ZrMe}_2$ precursors and ozone as function of the deposition temperature. Pulsing times were $1.0$ and $2.0~\\mathrm{s}$ for the $\\mathrm{Zr}$ precursor and $\\mathrm{O}_3$ respectively. Lines are guides to the eye.","id":"test/atomic-layer-deposition/experimental-usecase/19/fig1","sample_id":"atomic-layer-deposition/experimental-usecase/19/fig1","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart shows the deposition rate (Å/cycle) of Zirconia (ZrO₂ ) thin films from two different zirconium precursors—(CpMe)₂Zr(OMe)Me and (CpMe)₂ZrMe₂—using O₃ as the oxidant, plotted against deposition temperature (250–500 °C). The growth rate seems to increase with increase in temperature and the behaviours are slightly different for the two precursors.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition Temperature (°C) | Growth Rate (Å/cycle) | Process |\\n|-----------------------------|------------------------|-----------------------------|\\n| 250 | 0.24 | (CpMe)₂Zr(OMe)Me / O₃ |\\n| 250 | 0.21 | (CpMe)₂ZrMe₂ / O₃ |\\n| 300 | 0.56 | (CpMe)₂Zr(OMe)Me / O₃ |\\n| 300 | 0.52 | (CpMe)₂ZrMe₂ / O₃ |\\n| 350 | 0.64 | (CpMe)₂Zr(OMe)Me / O₃ |\\n| 350 | 0.56 | (CpMe)₂ZrMe₂ / O₃ |\\n| 400 | 0.75 | (CpMe)₂Zr(OMe)Me / O₃ |\\n| 400 | 0.58 | (CpMe)₂ZrMe₂ / O₃ |\\n| 450 | 0.88 | (CpMe)₂Zr(OMe)Me / O₃ |\\n| 450 | 0.71 | (CpMe)₂ZrMe₂ / O₃ |\\n| 500 | 1.10 | (CpMe)₂Zr(OMe)Me / O₃ |\\n| 500 | — | (CpMe)₂ZrMe₂ / O₃ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Precursors Used:\\n\\n(CpMe)₂Zr(OMe)Me\\n\\n(CpMe)₂ZrMe₂\\n\\n2. Experimental Conditions for One ALD Cycle:\\n\\nZr Precursor Pulse Time: 1.0 s\\n\\nO₃ (Oxidant) Pulse Time: 2.0 s\\n\\nDeposition Temperature Range: 250–500 °C\\n\\nOxidant: O₃ (Ozone)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"(CpMe)₂Zr(OMe)Me provides a stable, low deposition rate (~0.5 Å/cycle) from 250–400 °C, while (CpMe)₂ZrMe₂ only achieves a stable rate above 350 °C. The balance is between low-temperature capability and growth rate. Choosing the (OMe)Me precursor enables processing below 350 °C, but at the cost of a roughly 2x slower growth rate compared to the Me₂ precursor at its optimal temperature.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It reduces the deposition rate by approximately half (from ~1.0 Å/cycle to ~0.5 Å/cycle).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The (CpMe)₂Zr(OMe)Me precursor must be used, as it shows a stable rate at 300 °C. The consequence is a slower growth rate, which will increase the total deposition time per wafer to achieve the target film thickness. This reduces tool throughput and increases the cost of the manufacturing step.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":419,"height":346}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/Jaakko Niinisto et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":422,"height":350,"image_format":"jpeg","image_sha256":"19570d36026756cad3bafec249f9b2bbdf172a421a9a183404c5416b86bd203f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_19_fig2.jpg","caption":"Fig.2 Deposition rate of $\\mathrm{ZrO_2}$ thin films grown from $(\\mathrm{CpMe})_2\\mathrm{Zr(OMe)Me}$ and $(\\mathrm{CpMe})_2\\mathrm{ZrMe}_2$ as function of the $\\mathrm{Zr}$ precursor pulse length at the substrate temperatures indicated. Pulsing time was $2.0~\\mathrm{s}$ for $\\mathrm{O}_3$ . Lines are guides to the eye.","id":"test/atomic-layer-deposition/experimental-usecase/19/fig2","sample_id":"atomic-layer-deposition/experimental-usecase/19/fig2","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple chart shows how the growth rate of ZrO₂ thin films changes with zirconium precursor pulse length for two precursors—(CpMe)₂Zr(OMe)Me and (CpMe)₂ZrMe₂—using O₃ as the oxidant. Measurements were taken at 400 °C and 350 °C. As the pulse length increases, the growth rate approaches saturation, but the two precursors show slightly different saturation behaviors. The O₃ pulse time was fixed at 2.0 s.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Zr Precursor Pulse Length (s) | Growth Rate (Å/cycle) | Process |\\n|-------------------------------|------------------------|-----------------------------------------------|\\n| 0.5 | — | (CpMe)₂Zr(OMe)Me / O₃ at 400°C |\\n| 0.5 | — | (CpMe)₂Zr(OMe)Me / O₃ at 350°C |\\n| 0.5 | — | (CpMe)₂ZrMe₂ / O₃ at 350°C |\\n| 1.0 | 0.72 | (CpMe)₂Zr(OMe)Me / O₃ at 400°C |\\n| 1.0 | 0.60 | (CpMe)₂Zr(OMe)Me / O₃ at 350°C |\\n| 1.0 | 0.52 | (CpMe)₂ZrMe₂ / O₃ at 350°C |\\n| 1.5 | 0.72 | (CpMe)₂Zr(OMe)Me / O₃ at 400°C |\\n| 1.5 | 0.62 | (CpMe)₂Zr(OMe)Me / O₃ at 350°C |\\n| 1.5 | — | (CpMe)₂ZrMe₂ / O₃ at 350°C |\\n| 2.0 | 0.75 | (CpMe)₂Zr(OMe)Me / O₃ at 400°C |\\n| 2.0 | 0.65 | (CpMe)₂Zr(OMe)Me / O₃ at 350°C |\\n| 2.0 | 0.56 | (CpMe)₂ZrMe₂ / O₃ at 350°C |\\n| 2.5 | 0.75 | (CpMe)₂Zr(OMe)Me / O₃ at 400°C |\\n| 2.5 | 0.65 | (CpMe)₂Zr(OMe)Me / O₃ at 350°C |\\n| 2.5 | — | (CpMe)₂ZrMe₂ / O₃ at 350°C |\\n| 3.0 | — | (CpMe)₂Zr(OMe)Me / O₃ at 400°C |\\n| 3.0 | 0.66 | (CpMe)₂Zr(OMe)Me / O₃ at 350°C |\\n| 3.0 | 0.55 | (CpMe)₂ZrMe₂ / O₃ at 350°C |\\n| 3.5 | — | (CpMe)₂Zr(OMe)Me / O₃ at 400°C |\\n| 3.5 | — | (CpMe)₂Zr(OMe)Me / O₃ at 350°C |\\n| 3.5 | — | (CpMe)₂ZrMe₂ / O₃ at 350°C |\\n| 30 | — | (CpMe)₂Zr(OMe)Me / O₃ at 400°C |\\n| 30 | 0.62 | (CpMe)₂Zr(OMe)Me / O₃ at 350°C |\\n| 30 | 0.52 | (CpMe)₂ZrMe₂ / O₃ at 350°C |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Variable Zr precursor pulse (x s)\\n\\n, Purge\\n\\n, Fixed O₃ pulse (2.0 s)\\n\\n, Purge\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The (CpMe)₂Zr(OMe)Me precursor at 400°C reaches saturation with a shorter pulse length (~1.5 s) than the (CpMe)₂ZrMe₂ precursor at 350°C, which requires a longer pulse (~2.5 s) to saturate. This indicates the (OMe)Me precursor reacts and saturates the surface more rapidly at a higher temperature, while the Me₂ precursor has slower surface reaction kinetics at 350°C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Replacing one -OMe ligand with a second -Me ligand.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"(CpMe)₂Zr(OMe)Me at 350°C is preferable. It shows a clear, achievable saturation plateau at this temperature, ensuring self-limiting growth for uniformity. Using the Me₂ precursor at 350°C would require a longer, harder-to-control pulse to reach saturation, risking incomplete reactions and less uniform films.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":475,"height":352}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/Jaakko Niinisto et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":475,"height":358,"image_format":"jpeg","image_sha256":"7523d44a3e1cd01d01e4aa3cb1bce322ab89f98d891775ff2c91745cb128db25","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_19_fig_7.jpg","caption":"Fig. 7 Current density-voltage (a) and Poole-Frenkel (b) plots of the current-voltage dependences measured on some representative $\\mathrm{ZrO_2}$ films deposited from precursors indicated by labels. Layer thicknesses are also given in the labels.","id":"test/atomic-layer-deposition/experimental-usecase/19/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/19/fig_7","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The muliple line chart shows Current Density-Voltage (J-V) plots for ZrO₂ films of varying thickness (3.6–13.1 nm) deposited from two different precursors. The analysis identifies dominant leakage current mechanisms: Schottky emission (interface-limited) at lower fields.\"},{\"panel_id\":\"b\",\"text\":\"The muliple line chart shows Poole-Frenkel plots for ZrO₂ films of varying thickness (3.6–13.1 nm) deposited from two different precursors. The analysis identifies dominant leakage current mechanisms: Poole-Frenkel emission (bulk trap-limited) at higher fields.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Voltage, V | Current density, A/cm² |\\n|---|---|\\n| 0 | 10^-9 |\\n| 1 | 10^-8 |\\n| 2 | 10^-7 |\\n| 3 | 10^-6 |\\n| 4 | 10^-5 |\\n| 5 | 10^-4 |\\n| 6 | 10^-3 |\\n| 7 | 10^-2 |\\n| 8 | 10^-1 |\"},{\"panel_id\":\"b\",\"text\":\"| E^(1/2), (MV/cm)^(1/2) | ln(J/E) |\\n|---|---|\\n| 0.0 | -20 |\\n| 0.5 | -15 |\\n| 1.0 | -10 |\\n| 1.5 | -5 |\\n| 2.0 | 0 |\\n| 2.5 | 5 |\\n| 3.0 | 10 |\\n| 3.5 | 15 |\\n| 4.0 | 20 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Deposit a top electrode (like Al/Ag/Au) to form a capacitor.\\n\\nApply a series of increasing voltage biases to the capacitor.\\n\\nMeasure the resulting current flowing through the film at each applied voltage.\\nThe final critical step is measuring the current, which directly gives the leakage density (J) for that specific voltage (V), allowing the trace to be plotted.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"(CpMe)₂Zr(OMe)Me (3.9 nm): Pro: Lower leakage current (~10⁻⁷ A/cm² at 2V).\\n\\n(CpMe)₂ZrMe₂ (3.6 nm): Con: Higher leakage current (~10⁻⁴ A/cm² at 2V).\\n\\n(CpMe)₂Zr(OMe)Me precursor is better for low leakage.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The slope is proportional to the square root of the trap's dynamic dielectric constant and its energy depth. A steeper slope (like for the (CpMe)₂ZrMe₂ film) suggests a lower dynamic dielectric constant or different trap energetics. The OMe ligand in the (CpMe)₂Zr(OMe)Me precursor may incorporate oxygen differently, potentially passivating defects or creating a distinct trap distribution with a shallower effective energy level, leading to its different slope.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies that in thin films (3.9 nm), the dominant leakage mechanism shifts from bulk trap-assisted (Poole-Frenkel) to a different mechanism, most likely direct tunneling. Tunneling current is thickness-sensitive and can be high and unpredictable.For a capacitor requiring long-term charge retention, this makes very thin ZrO₂ films unreliable, as charge will leak rapidly via tunneling, regardless of improvements to bulk film quality.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":0,"width":515,"height":382},{"panel_id":"b","x":5,"y":395,"width":505,"height":382}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/Jaakko Niinisto et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":514,"height":781,"image_format":"jpeg","image_sha256":"1a79f653c114dec6ff9881b9d460a0c98ca30e5621b8c616767536e2457dfcfc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_20_fig_1.jpg","caption":"Fig. 1 Composition of deposited films versus percentage of titanium oxide sub-cycles. Experimental data are compared with a model based on surface utilization10 and the growth rates of the individual binary oxides.","id":"test/atomic-layer-deposition/experimental-usecase/20/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/20/fig_1","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the titanium concentration (at.% relative to total metal content) as a function of TiO₂ subcycles (%). It compares experimental data with theoretical values from a surface utilization model with calculated values from individual growth rates. The surface utilization model better predicts experimental values.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TiO₂ subcycles (%) | Titanium concentration (at.%): Experimental data | Titanium concentration (at.%): from surface utilization model | Titanium concentration (at.%): calculated from individual growth rates |\\n|---|---|---|---|\\n| 0.0 | 0.0 | 0.0 | 0.0 |\\n| 5.8 | 47.2 | 25.3 | 13.5 |\\n| 10.9 | 58.1 | 40.3 | 23.3 |\\n| 13.8 | 62.5 | 47.4 | 29.0 |\\n| 17.0 | 62.4 | 52.8 | 32.9 |\\n| 19.8 | 63.0 | 57.7 | 37.7 |\\n| 25.0 | 68.7 | 64.6 | 45.3 |\\n| 29.8 | 77.5 | 70.3 | 51.0 |\\n| 32.8 | 76.5 | 73.2 | 54.5 |\\n| 50.2 | 84.6 | 84.5 | 71.2 |\\n| 67.2 | 93.5 | 92.0 | 83.3 |\\n| 75.2 | 94.2 | 94.5 | 88.3 |\\n| 100 | 100 | 100 | 100 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Surface utilization model.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The calculations generally underestimate the experimental values.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approx. 5-6%.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All three datasets intersect at 100% TiO₂ subcycles, which corresponds to 100 at.% Ti. It is physically necessary for all methods to reach this value because at 100% subcycles, the deposition consists exclusively of titanium precursor pulses. Therefore, the resulting film is pure titanium oxide, physically forcing the cation composition to be 100% titanium.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":539,"height":420}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/Titta Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":539,"height":420,"image_format":"jpeg","image_sha256":"bc15b6f488357c14e4e67e6c1a9c3da40655699508782b8d7f65b558bee56eb9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_20_fig_3.jpg","caption":"Fig. 3 Growth per cycle as a function of the percentage of $\\mathrm{TiO_2}$ subcycles.","id":"test/atomic-layer-deposition/experimental-usecase/20/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/20/fig_3","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the growth per cycle (Å/cycle) as a function of the percentage of TiO₂ subcycles. It compares theoretical values derived from the individual growth rates (open circles) with experimental values calculated from film thicknesses measured by X-ray Reflectivity (solid squares). Experimental growth rates are consistently lower than the prediction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TiO₂ subcycles (%) | Growth per cycle (Å/cycle): calculated from individual growth rates | Growth per cycle (Å/cycle): calculated from XRR thickness |\\n|---|---|---|\\n| 0 | 0.280 | 0.280 |\\n| 6 | 0.293 | 0.250 |\\n| 12 | 0.306 | 0.178 |\\n| 14 | 0.313 | 0.180 |\\n| 18 | 0.320 | 0.239 |\\n| 20 | 0.326 | 0.260 |\\n| 25 | 0.338 | 0.278 |\\n| 33 | 0.357 | 0.239 |\\n| 50 | 0.399 | 0.300 |\\n| 67 | 0.440 | 0.359 |\\n| 75 | 0.459 | 0.379 |\\n| 100 | 0.519 | 0.519 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approx. 0.519 Å/cycle (100% TiO₂ subcycles).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approx. 0.28 Å/cycle (0% TiO₂ subcycles).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Theoretical values overestimate the experimental ones (derived from XRR measurement).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Theoretical values calculated from individual growth rates.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":514,"height":375}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/Titta Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":514,"height":375,"image_format":"jpeg","image_sha256":"26e61de4d3234cb771152ae745529ac154387120e1198ab187b56d5b1eb461d1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_20_fig_6.jpg","caption":"Fig. 6 SIMS depth profiles of LLT films grown with $\\mathrm{LiO}^{\\prime}\\mathrm{Bu}$ pulse times of 2, 8, and $12\\mathrm{s}$ .","id":"test/atomic-layer-deposition/experimental-usecase/20/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/20/fig_6","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays SIMS depth profiles showing the distribution of Ti-48, Li-6 and La-138 throughout the thickness of the film in nanometers for films grown with different precursor pulse times (12, 8, 2 s).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Species | Pulse time (s) | Depth (nm) | Intensity (counts/second) |\\n|---|---|---|---|\\n| La-138 | 12 | 2.85 | 240 |\\n| La-138 | 12 | 20.4| 369 |\\n| La-138 | 12 | 95.1| 376 |\\n| La-138 | 12 | 111.45| 779 |\\n| La-138 | 12 | 128.7 | 87 |\\n| La-138 | 8 | 2.85 | 241 | \\n| La-138 | 8 | 18.9 | 362 | \\n| La-138 | 8 | 83.7 |376 | \\n| La-138 | 8 | 96.3 | 867 | \\n| La-138 | 8 | 115.05 | 72 | \\n| La-138 | 2 | 2.85 | 241 | \\n| La-138 | 2 | 18.9 | 362 | \\n| La-138 | 2 | 71.85 | 389 | \\n| La-138 | 2 | 79.8 | 499 | \\n| La-138 | 2 | 95.85 | 71 | \\n| Li-6 | 12 | 0.89 | 3869268 | \\n| Li-6 | 12 | 5.7 | 448809 | \\n| Li-6 | 12 | 91.35 | 490593 | \\n| Li-6 | 12 | 94.95 | 851946 | \\n| Li-6 | 12 | 102.3 | 349796 | \\n| Li-6 | 12 | 108.45 | 481936 | \\n| Li-6 | 12 | 127.2 | 42045 | \\n| Li-6 | 8 | 3.15 | 481936 | \\n| Li-6 | 8 | 79.35 | 481936 | \\n| Li-6 | 8 | 84.75 | 882828 | \\n| Li-6 | 8 | 89.4 | 282508 | \\n| Li-6 | 8 | 95.4 | 481936 | \\n| Li-6 | 8 | 123.15 | 7748 | \\n| Li-6 | 2 | 0.75 | 1402514 | \\n| Li-6 | 2 | 8.25 | 228164 | \\n| Li-6 | 2 | 60.75 | 382362 | \\n| Li-6 | 2 | 68.4 | 675923 | \\n| Li-6 | 2 | 75 | 362475 | \\n| Li-6 | 2 | 123.159 | 7748 | \\n| Li-6 | 2 | 79.2 | 490593 | \\n| Li-6 | 2 | 103 | 14448 | \\n| Ti-48 | 12 | 2.1 | 7215184 |\\n| Ti-48 | 12 | 5.25 | 8933691 |\\n| Ti-48 | 12 | 104.1 | 5931928 |\\n| Ti-48 | 12 | 128.7 | 75659.94 |\\n| Ti-48 | 8 | 2.1 | 8621186 |\\n| Ti-48 | 8 | 4.95 | 9940831 |\\n| Ti-48 | 8 | 90.6 | 4876905 |\\n| Ti-48 | 8 | 123.6 | 8029 |\\n| Ti-48 | 2 | 2.1 |8621186 |\\n| Ti-48 | 2 | 4.95 | 9940831 |\\n| Ti-48 | 2 | 74.55 | 5524183 |\\n| Ti-48 | 2 | 103.95 | 14971 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film grown with 12 s pulse.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The lithium signal curve after 2 s is distinctly lower in intensity compared to the curves at 8 s and 12 s. Since the 2 s curve is below the maximum level, it indicates that the maximum possible amount of lithium has not been incorporated yet.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ti-48, Li-6, La-138\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The signal intensities for all three isotopes drop by orders of magnitude once the depth passes the film thickness (e.g. for >120 nm for the 12s sample). This indicates the substrate is a different material.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":641,"height":413}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/Titta Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":641,"height":413,"image_format":"jpeg","image_sha256":"e08cf451755efb2bfd1030b25fed1395e6deb95270248a1f74b0faf79c080304","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_20_fig_7.jpg","caption":"Fig. 7 SIMS depth profiles of lithium, titanium, and lanthanum in the LLT films with one and three $\\mathrm{LiO}^{\\prime}\\mathrm{Bu}+$ water sub-cycles.","id":"test/atomic-layer-deposition/experimental-usecase/20/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/20/fig_7","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays SIMS depth profiles comparing the intensity at various depths for isotopes of titanium (Ti-48), lithium (Li-6), and lanthanum (La-138) for films grown using one lithium precursor sub-cycle and three lithium sub-cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Species | Number of lithium sub-cycles | Depth (nm) | Intensity (counts/second) |\\n|---|---|---|---|\\n| La-138 | 3 Li sub-cycles | 3 | 272 |\\n| La-138 | 3 Li sub-cycles | 128 | 372 |\\n| La-138 | 3 Li sub-cycles | 134 | 469 |\\n| La-138 | 3 Li sub-cycles | 159 | 165 |\\n| La-138 | 1 Li sub-cycle | 3 | 273 |\\n| La-138 | 1 Li sub-cycle | 84 | 379 |\\n| La-138 | 1 Li sub-cycle | 97 | 925 |\\n| La-138 | 1 Li sub-cycle | 115 | 83 |\\n| Li-6 | 3 Li sub-cycles | 0.6 | 2173095 |\\n| Li-6 | 3 Li sub-cycles | 3.6 | 478382 |\\n| Li-6 | 3 Li sub-cycles | 55 | 527121 |\\n| Li-6 | 3 Li sub-cycles | 78 | 1474142 |\\n| Li-6 | 3 Li sub-cycles | 158 | 158284 |\\n| Li-6 | 1 Li sub-cycle | 0.6 | 2173095 |\\n| Li-6 | 1 Li sub-cycle | 7.4 | 357578 |\\n| Li-6 | 1 Li sub-cycle | 78 | 497312 |\\n| Li-6 | 1 Li sub-cycle | 84 | 823627 |\\n| Li-6 | 1 Li sub-cycle | 90 | 294511 |\\n| Li-6 | 1 Li sub-cycle | 95 | 478382 |\\n| Li-6 | 1 Li sub-cycle | 124 | 7237 |\\n| Ti - 48 | 3 Li sub-cycles | 2.2 | 7097797 |\\n| Ti - 48 | 3 Li sub-cycles | 4.4 | 8130408 |\\n| Ti - 48 | 3 Li sub-cycles | 115 | 5733594 |\\n| Ti - 48 | 3 Li sub-cycles | 151 | 442657 |\\n| Ti - 48 | 3 Li sub-cycles | 1597 | 330874 |\\n| Ti - 48 | 1 Li sub-cycle | 2.2 | 7097797 |\\n| Ti - 48 | 1 Li sub-cycle | 5.2 | 9495724 |\\n| Ti - 48 | 1 Li sub-cycle | 88 | 4909206 |\\n| Ti - 48 | 1 Li sub-cycle | 123 | 7379 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The one grown with 3 lithium sub-cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. Between 60 nm and 120 nm there is a broad surge in intensity. While the upper region (10–60 nm) overlaps with the 1-sub-cycle reference, suggesting normal growth, the massive surge in intensity near the bottom might indicate that excess lithium from the additional pulses migrated and segregated at the interface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film grown with one lithium precursor pulse.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At the interface, as indicated by the surge in intensity at approx. 80 nm.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":564,"height":458}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/20/Titta Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":564,"height":458,"image_format":"jpeg","image_sha256":"baadd747ed96f2fd566753604a91666f857d9c944da07bac651816d9dd4a714c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_21_fig_3.jpg","caption":"Fig. 3 (a) In situ thickness measurements by SE for plasma-assisted ALD of $\\mathrm{Li}_{2}\\mathrm{CO}_{3}$ at 50, 200, 275 and $300^{\\circ}\\mathrm{C}$ and thermal ALD of $\\mathrm{Li}_{2}\\mathrm{CO}_{3}$ at $150^{\\circ}\\mathrm{C}$ . The film growth between 50 and $200^{\\circ}\\mathrm{C}$ with plasma ALD was very similar (see ESI†). (b) Growth per cycle as a function of process table temperature for both plasma-assisted (squares) and thermal (circles) ALD processes.","id":"test/atomic-layer-deposition/experimental-usecase/21/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/21/fig_3","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart plots the thickness of a material as a function of the number of cycles for different thermal and plasma treatments at various temperatures.\"},{\"panel_id\":\"b\",\"text\":\"The chart plots the GPC SE and GPC EBS values against temperature for both thermal and plasma treatments.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | Thermal 150 °C | Plasma 50 °C | Plasma 200 °C | Plasma 275 °C | Plasma 300 °C |\\n|-------------------|-----------------|--------------|---------------|---------------|---------------|\\n| 0 | 0 | 0 | 0 | 0 | 0 |\\n| 100 | 8 | 10 | 15 | 18 | 20 |\\n| 200 | 15 | 18 | 25 | 28 | 30 |\\n| 300 | 22 | 25 | 32 | 36 | 38 |\\n| 400 | 28 | 32 | 38 | 42 | 45 |\\n| 500 | 35 | 38 | 44 | 48 | 50 |\\n| 600 | 42 | 45 | 50 | 54 | 58 |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | GPC SE Thermal (Å) | GPC SE Plasma (Å) | GPC EBS Thermal (Li.at.nm⁻²) | GPC EBS Plasma (Li.at.nm⁻²) |\\n|-------------------|----------------------|---------------------|--------------------------------|--------------------------------|\\n| 50 | 0.3 | 0.8 | - | - |\\n| 100 | 0.6 | 0.8 | - | - |\\n| 150 | 0.5 | 0.8 | 3 | 4 |\\n| 200 | 0.5 | 0.8 | 3 | 4 |\\n| 275 | 0.5 | 0.8 | 3 | 4 |\\n| 300 | 0.5 | 1.6 | 3 | 7 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For plasma-assisted ALD and Tsub 10,14,15,18 Temperatures reported from this work are measured using in situ spectroscopic ellipsometry, while the literature values are the reported set point temperatures. Substrate temperature values from the literature may deviate depending on process conditions and reactors used, as discussed in more detail in the supplementary material. Additional data for thermal ALE processes utilizing alternate reactants are presented in Fig. S3 in the supplementary material.","id":"test/atomic-layer-etching/experimental-usecase/12/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/12/fig_4","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Etch per cycle increases with substrate temperature for all reported thermal ALE chemistries, with the SF₆ plasma/TMA process showing the strongest activation. This work reaches ~1.8 Å/cycle at 200 °C and increases to ~3.5 Å/cycle at 300 °C, exceeding all HF/TMA literature values. The highest reported HF/TMA result (Cano et al.) reaches ~2.5 Å/cycle at 300 °C, while other studies remain at or below ~1 Å/cycle. The comparison highlights a clear performance advantage of plasma-assisted fluorination.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Substrate Temperature (°C) | This work (SF₆/TMA) | Canon HF/TMA | Cheng HF/TMA | Lee HF/TMA | Zyvox HF/TMA |\\n|---|---|---|---|---|---|\\n| 150 | ~0.2 | ~0.0 | ~0.0 | ~0.0 | ~0.0 |\\n| 200 | ~1.2 | ~0.6 | ~0.4 | ~0.3 | ~0.2 |\\n| 250 | ~2.7 | ~1.5 | ~0.9 | ~0.7 | ~0.6 |\\n| 300 | ~3.5 | ~2.2 | ~1.3 | ~1.1 | ~1.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thermal HF/TMA process and SF6 plasma/TMA process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The current work with SF6/TMA.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 275 °C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch per cycle increases as the substrate temperature gets higher.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For increasing temperature, regardless of the chemistry, the EPC increases.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that different types of AlOx are etched. It is known that deposition method of the substrate can have an impact on etch rate.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Zywotko has shown that there is deposition of 0.5 angstrom/cycle at 250 degrees celcius.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"at 250 degrees celcius an etch rate of 3 angstrom/cycle is achieved.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SF₆ plasma/TMA process shows much stronger temperature activation than HF/TMA chemistries. At 250 °C it already matches or exceeds the highest HF/TMA values reported at 300 °C, and at 300 °C it reaches ~3.5 Å/cycle. This indicates that plasma-assisted fluorination produces a more reactive surface for ligand exchange with TMA.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SF₆ plasma/TMA (this work), at ~3.5 Å/cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"SF₆ plasma produces a higher density of reactive fluorinated sites than HF gas exposure. The presence of energetic fluorine species increases fluorine coverage and accessibility at the surface, which enhances the efficiency of TMA-driven ligand exchange. This results in greater material removal per cycle at elevated temperature.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SF₆ plasma ALE process (green squares) exhibits a significantly higher EPC compared to all the thermal HF/TMA processes (dashed lines) across the measured temperature range. For example, at 250 °C, the plasma process achieves an EPC of nearly 3.0 Å/cycle, whereas the thermal processes range from approximately 0.1 to 2.3 Å/cycle. Additionally, the plasma process maintains viable etch rates at lower temperatures where some thermal processes are inactive or show negligible rates.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate acts as a strong function of the substrate temperature, increasing steeply as the temperature rises. The EPC grows from approximately 0.2 Å/cycle at 155 °C to 3.4 Å/cycle at 285 °C. The data point at 140 °C lies slightly below zero, indicating a transition from etching to deposition (ALD mode) at very low temperatures.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A key advantage is the ability to achieve significant etching at lower processing temperatures. The figure shows that the plasma process delivers an etch rate of 0.8 Å/cycle at 185 °C, a temperature where thermal kinetics typically limit the reaction rate for HF-based processes. This makes the plasma variant suitable for substrates that cannot withstand the higher thermal budgets required for efficient thermal ALE.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The transition occurs around 140 °C, as indicated by the data point at 140 °C showing a slightly negative value (net deposition) and the point at 155 °C showing a positive etch rate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SF₆ plasma / TMA: The chemistry utilized in \\\"This work\\\" (Green square trace).\\n\\nThermal HF / TMA: The standard chemistry cited from literature sources (Cano, Hennessy, Lee, Zywotko).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SF₆/TMA process exhibits a significantly higher etch rate compared to the HF/TMA processes. While the HF/TMA data (excluding Cano) generally remains below 1.5 Å/cycle, the SF₆/TMA process rapidly climbs from ~2.0 Å/cycle to >3.0 Å/cycle in this temperature window.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It implies the etch rate is limited by a plasma-driven surface reaction with low activation energy, not by a thermally activated step like precursor decomposition or ligand desorption.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Modern memory chips contain temperature-sensitive materials (e.g., metals, organics) that cannot withstand the >275°C required for thermal HF/TMA etching. The SF₆ plasma/TMA process achieves the necessary etch rate at ~200°C, compatible with these thermal constraints. Furthermore, the wide temperature window (200-300°C) offers robust process control across a wafer, which is critical for the high-aspect-ratio structures in 3D memory.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, depending on the reactor and process conditions used.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In previous work, ALD of AlF3 was observed to proceed in the wide temperature range of 50–300 °C when using a short 10 ms TMA dose.This suggests\\nthat not only the temperature but also exposure to the precursor determines whether deposition or etching occurs.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In comparison to thermal ALE, the plasma ALE process exhibits a higher etch per cycle (EPC) over the entire temperature range investigated\\nhere.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A significant etch rate of 0.8A˚ /cycle was already observed at a relatively low temperature of 185 °C, highlighting one of the benefits of using a plasma process. It is thought that the fluorine radicals provided by the plasma allow for higher etch rates as a thicker fluorinated surface region is formed as compared to when using HF.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3.4 Å.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"140 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The plasma ALE process shows a higher EPC at all temperatures.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TMA exposure dose, which resulted in AlF3 ALD for exposure times of 10 ms.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plot shows that SF₆ plasma/TMA gives the highest EPC at a given substrate temperature compared with the HF/TMA studies. That means you can achieve the same total etch depth at a lower temperature than with HF/TMA. Based on this trend alone, SF₆ plasma/TMA is the better choice for temperature-sensitive substrates.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At approximately 150 °C (EPC crossing 0).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Plasma etching with SF6/TMA.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Cano (HF/TMA): 2.5 Å/cycle, Hennessy (HF/TMA): 1.2 Å/cycle, Lee (HF/TMA): 0.45 Å/cycle\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"EPC increases with substrate temperature for all reported processes. The SF₆ plasma/TMA process shows a steeper increase and higher EPC values compared to thermal HF/TMA processes reported in the literature, particularly above 200 °C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The SF₆ plasma/TMA process reported in this work.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Temperatures in this work are measured in situ, while literature values are reported set points that may vary with reactor design and process conditions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Higher EPC, Stronger T-dependence, Better efficiency vs. thermal ALE\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The plasma-assisted ALE process consistently shows higher EPC than reported thermal HF/TMA processes for the entire temperature range studied.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At low substrate temperatures (~140 °C), the EPC is negative, indicating a transition from etching to deposition, which reflects ALD-like behavior.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Achieves higher etch rates even at relatively low temperatures, Ensures isotropic etching suitable for high aspect ratio 3D trenches, Allows precise control of film removal per cycle through temperature and pulse adjustments\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the substrate temperature increases the EPC. At low temperatures (~140 °C), the EPC is slightly negative, indicating deposition-like behavior typical of ALD. As the temperature rises, the EPC increases steadily, reaching ~3.4 Å/cycle at 285 °C, showing that higher substrate temperatures enhance etching efficiency in the plasma-assisted ALE process.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":598,"height":450}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":598,"height":450,"image_format":"jpeg","image_sha256":"8c6d933d6117c56fdd962da8a41bce7235d360674e1d8aae675b600767265eb2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_12.jpg","caption":"Figure 12. Ion signal intensities versus temperature during $\\mathrm{BCl}_3$ exposure on $\\mathrm{AlF}_3$ powder with a heating rate of $3^{\\circ}\\mathrm{C / min}$ . (a) Boron ligand-exchange species $(\\mathrm{BCl}_2\\mathrm{F}^+$ , $\\mathrm{BClF}_2^+$ and $\\mathrm{BF}_3^+$ ) and $\\mathrm{BCl}_3^+$ reactant. (b) $\\mathrm{AlCl}_3^+$ and $\\mathrm{AlCl}_2^+$ etch products.","id":"test/atomic-layer-etching/experimental-usecase/20/figure_12","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_12","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the intensity of various ions (BCl₃⁺, BCIF₂⁺, BCl₂F⁺, BF₃⁺) as a function of temperature. The intensity decreases for BCl₃⁺ while it increases for BCIF₂⁺, BCl₂F⁺ and BF₃⁺, the latter showing a particularly strong increase.\"},{\"panel_id\":\"b\",\"text\":\"The line chart displays the intensity of AlCl₂⁺ and AlCl₃⁺ as a function of temperature. Both intensities increase with temperature, with AlCl₂⁺ showing a steeper rise than AlCl₃⁺.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | BCl₃⁺ | BCIF₂⁺ | BCl₂F⁺ | BF₃⁺ |\\n|----------------|-------|--------|---------|-------|\\n| 0 | 200 | 40 | 0 | 0 |\\n| 100 | 160 | 40 | 20 | 10 |\\n| 200 | 150 | 40 | 20 | 20 |\\n| 300 | 80 | 100 | 80 | 100 |\\n| 400 | - | - | - | - |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | AlCl₂⁺ | AlCl₃⁺ |\\n|----------------|--------|--------|\\n| 0 | 0 | 0 |\\n| 100 | 0 | 0 |\\n| 200 | 0 | 0 |\\n| 300 | 200 | 80 |\\n| 400 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The boron species originate from ligand-exchange reactions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This is a ligand-exchange reaction that leads to F/Cl transfer and the formation of Cl in the AlF3 powder.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The intensity of both etch products remains constant at 0 mV until 200 °C. After this point, the peak intensity increases for both products.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the subfigure b, the ACl2+ shows a higher peak intensity.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":6,"width":657,"height":244},{"panel_id":"b","x":2,"y":254,"width":656,"height":297}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":661,"height":553,"image_format":"jpeg","image_sha256":"dc461b367b9358d7ebebd8e0bfa9d3461adc3500f80497c4e4f07ab68b8aa8d2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_4.jpg","caption":"Fig. 4. Self-limiting behavior for CoO thermal ALE for long Hacac and $\\mathrm{O_3}$ exposures at $250^{\\circ}C$ Hacac exposure time was varied with $\\mathrm{O_3}$ exposure fixed at $1.0~\\mathrm{s}$ $\\mathrm{O_3}$ exposure time was varied with Hacac exposure fixed at $1.5~\\mathrm{s}$","id":"test/atomic-layer-etching/experimental-usecase/21/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_4","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the etch rate of CoOₓ (Å/cycle) as a function of exposure time to Hacac or O₃ (s) at 250 °C with a 40 s purge. Both curves show an increase in the etch ratio as exposure time increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Hacac or O₃ Exposure Times (s) | Hacac | O3 |\\n| --- | --- | --- |\\n| 0.0 | 0.0 | 0.0 |\\n| 0.5 | - | - |\\n| 1.0 | 0.36 | 0.44 |\\n| 1.5 | 0.44 | 0.46 |\\n| 2.0 | 0.46 | 0.48 |\\n| 2.5 | 0.48 | 0.52 |\\n| 3.0 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The experiments were performed under 40 s of purge at 250 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The CoOx etch rate increases for both cases as the exposure time increases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After 2.5 s of exposure to Hacac or O3.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":660,"height":550}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":664,"height":553,"image_format":"jpeg","image_sha256":"c4af285810dca305c19cdb1e96517046f81d53e4c3336de198787145a30533a6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_27_fig_4.jpg","caption":"Fig. 4. (a) The atomic percentage of the etched $\\mathrm{Al}_2\\mathrm{O}_3$ surface and (b) the $\\mathrm{Al / O}$ ratio of the etched surface of $\\mathrm{Al}_2\\mathrm{O}_3$ measured by X-ray photoelectron spectroscopy (XPS) for the reference, the $\\mathrm{Al}_2\\mathrm{O}_3$ etched by partial layer etching $(\\Theta_{\\mathrm{Al - Cl / BCl - O}}< 1)$ , and the $\\mathrm{Al}_2\\mathrm{O}_3$ etched by ALET $(\\Theta_{\\mathrm{Al - Cl / BCl - O}} = 1)$ .","id":"test/atomic-layer-etching/experimental-usecase/27/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/27/fig_4","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the atomic percentages of Al and O of the three samples.\"},{\"panel_id\":\"b\",\"text\":\"The bar chart compares the Al/O ratio across three samples: Ref., Partial Layer Etching, and ALET.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Atomic Percentage Al | Atomic Percentage O |\\n|---|---|---|\\n| Ref. | 35 | 65 |\\n| Partial Layer Etching | 30 | 70 |\\n| ALET | 35 | 65 |\"},{\"panel_id\":\"b\",\"text\":\"| Sample | Al/O Ratio |\\n|---|---|\\n| Ref. | 0.55 |\\n| Partial Layer Etching | 0.4 |\\n| ALET | 0.55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 1 nm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ALD Al2O3 reference has an Al/O ratio lower than 0.67, whilst sapphire is exactly 0.67.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Under partial layer etching, the Al/O ratio decreases below the reference value, indicating non-stoichiometric surface modification.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 4 shows that the surface stoichiometry of Al2O3 responds very differently to partial layer etching compared to ALET. Under partial layer etching conditions, the atomic percentages shift and the Al/O ratio becomes lower than that of the ALD reference film. This suggests that the process removes oxygen and aluminum unevenly, likely due to preferential etching of surface-exposed sites. In contrast, when ALET is performed at a reactant ratio of unity, the surface stoichiometry remains unchanged. Both the elemental percentages and the Al/O ratio match the reference, showing that a complete monolayer is removed in each cycle without perturbing the underlying material.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":6,"width":629,"height":213},{"panel_id":"b","x":5,"y":228,"width":629,"height":223}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/Atomic layer etching of Al2O3 using BCl3Ar.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":636,"height":450,"image_format":"jpeg","image_sha256":"d108946ba1ce254c906748d60e65e888e4b96903cb029988d56819570b342691","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_35_fig_3.jpg","caption":"FIG. 3. Thickness change of $\\mathrm{TiO_2}$ and $\\mathrm{ZrO_2}$ thin films when exposed to $\\mathrm{WF_6}$ [(a) and (e)], $\\mathrm{BCl_3}$ [(b) and (f)], $\\mathrm{SOCl_2}$ [(c) and (g)], or $\\mathrm{TiCl_4}$ [(d) and (h)] doses at various temperatures as measured by in situ ellipsometry.","id":"test/atomic-layer-etching/experimental-usecase/35/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/35/fig_3","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"},{"panel_id":"e","label":"multiple line chart"},{"panel_id":"f","label":"multiple line chart"},{"panel_id":"g","label":"multiple line chart"},{"panel_id":"h","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"For the TiO₂ + WF₆ system, thickness change becomes increasingly negative with higher WF₆ doses and temperature, indicating progressive material removal dominated by fluorination reactions, with etching strongly enhanced above 200 °C.\"},{\"panel_id\":\"b\",\"text\":\"In the TiO₂ + BCl₃ system, thickness change remains close to zero across all BCl₃ doses and temperatures, showing that BCl₃ does not significantly etch or grow TiO₂ under these conditions and mainly results in surface-limited reactions.\"},{\"panel_id\":\"c\",\"text\":\"For TiO₂ + SOCl₂, higher SOCl₂ doses and elevated temperatures lead to gradual negative thickness changes, demonstrating temperature-activated chlorination and etching, with the strongest material removal observed at 240 °C.\"},{\"panel_id\":\"d\",\"text\":\"In the TiO₂ + TiCl₄ system, thickness changes are small and slightly positive at most temperatures, indicating limited surface modification or redeposition rather than net etching, consistent with reversible ligand exchange behavior.\"},{\"panel_id\":\"e\",\"text\":\"For the ZrO₂ + WF₆ system, thickness decreases significantly with increasing WF₆ dose, particularly at lower temperatures, confirming efficient fluorination-driven etching of ZrO₂, with stronger material loss at 250–300 °C.\"},{\"panel_id\":\"f\",\"text\":\"In the ZrO₂ + BCl₃ system, thickness changes are slightly positive or near zero depending on temperature, suggesting weak surface reactions and minimal etching, with higher temperatures favoring marginal film growth or surface stabilization.\"},{\"panel_id\":\"g\",\"text\":\"For ZrO₂ + SOCl₂, thickness variations remain small and fluctuate around zero, indicating limited and unstable chlorination reactions, with only minor etching occurring at specific temperatures and doses.\"},{\"panel_id\":\"h\",\"text\":\"In the ZrO₂ + TiCl₄ system, thickness increases steadily with TiCl₄ dose at higher temperatures, showing net film growth or surface chlorination, while lower temperatures exhibit minimal thickness change.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Chemistry|Substrate|Temperatures (°C)|Trend Summary|\\n|----------|---------|-----------------|-------------|\\n|WF6|TiO2|160, 180, 200, 220, 240|Initial swelling → etching at high T|\"},{\"panel_id\":\"b\",\"text\":\"| Chemistry|Substrate|Temperatures (°C)|Trend Summary|\\n|----------|---------|-----------------|-------------|\\n|BCl3|TiO2|200–280|Mild etch; self-limiting behavior|\"},{\"panel_id\":\"c\",\"text\":\"| Chemistry|Substrate|Temperatures (°C)|Trend Summary|\\n|----------|---------|-----------------|-------------|\\n|SOCl2|TiO2|160–240|Clean etching; strong self-limiting|\"},{\"panel_id\":\"d\",\"text\":\"| Chemistry|Substrate|Temperatures (°C)|Trend Summary|\\n|----------|---------|-----------------|-------------|\\n|TiCl4|TiO2|160–240|Weak reaction; minimal change|\"},{\"panel_id\":\"e\",\"text\":\"| Chemistry|Substrate|Temperatures (°C)|Trend Summary|\\n|----------|---------|-----------------|-------------|\\n|WF6|ZrO2|250, 275, 300, 325|Immediate shrinkage → stronger at high T|\"},{\"panel_id\":\"f\",\"text\":\"| Chemistry|Substrate|Temperatures (°C)|Trend Summary|\\n|----------|---------|-----------------|-------------|\\n|BCl3|ZrO2|250–325|Best etching at high T|\"},{\"panel_id\":\"g\",\"text\":\"| Chemistry|Substrate|Temperatures (°C)|Trend Summary|\\n|----------|---------|-----------------|-------------|\\n|SOCl2|ZrO2|250–325|Poor etching; sulfate formation|\"},{\"panel_id\":\"h\",\"text\":\"| Chemistry|Substrate|Temperatures (°C)|Trend Summary|\\n|----------|---------|-----------------|-------------|\\n|TiCl4|ZrO2|250–325|Slight etching at high T|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The curves reveal how each co-reactant affects thickness per dose and how strongly temperature influences reactivity. For TiO₂, SOCl₂ causes clean, stable etching with clear saturation, identifying it as the most effective co-reactant. For ZrO₂, BCl₃ shows the strongest negative thickness change at elevated temperatures, matching the expected formation of volatile ZrCl₄ and making it the best choice for ZrO₂ ALE. Meanwhile, SOCl₂ and TiCl₄ perform poorly on ZrO₂, confirming thermodynamic predictions.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, several chemistries (especially WF₆ + SOCl₂ for TiO₂ and WF₆ + BCl₃ for ZrO₂) show clear saturation behavior after a few doses, confirming self-limiting reactions consistent with ALE.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"TiO₂ + WF₆. TiO₂ + SOCl₂, ZrO₂ + WF₆, ZrO₂ + BCl₃\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SOCl₂ produces strong, clean etching on TiO₂ at all temperatures but yields minimal or even positive thickness change (surface swelling from sulfate formation) on ZrO₂, demonstrating poor ALE performance for ZrO₂.\"}]}]","bbox":[{"panel_id":"a","x":12,"y":20,"width":510,"height":376},{"panel_id":"b","x":8,"y":392,"width":499,"height":384},{"panel_id":"c","x":5,"y":776,"width":504,"height":384},{"panel_id":"d","x":3,"y":1159,"width":512,"height":384},{"panel_id":"e","x":530,"y":20,"width":492,"height":345},{"panel_id":"f","x":528,"y":379,"width":494,"height":368},{"panel_id":"g","x":528,"y":762,"width":494,"height":369},{"panel_id":"h","x":528,"y":1144,"width":494,"height":368}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/Comparison of BCl3, TiCl4, and SOCl2 chlorinating agents for.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1022,"height":1548,"image_format":"jpeg","image_sha256":"f87a582668358ffb3e7c0410d84540d31c24cc02d4de1cf1bbba0ee7ffd92fc7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_35_fig_6.jpg","caption":"FIG. 6. Influence of substrate temperature on the etch rates during atomic layer etching of (a) $\\mathrm{TiO_2}$ and (b) $\\mathrm{ZrO_2}$ thin films.","id":"test/atomic-layer-etching/experimental-usecase/35/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/35/fig_6","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows TiO₂ etch rate rising linearly with substrate temperature for WF₆ paired with SOCl₂, BCl₃ and TiCl₄ — with SOCl₂ giving the highest rates and TiCl₄ the lowest.\"},{\"panel_id\":\"b\",\"text\":\"shows ZrO₂ etch rate vs temperature: BCl₃ produces the largest and most temperature-sensitive etch rates, TiCl₄ is moderate, and SOCl₂ is essentially inactive. The trends confirm that etching is thermally activated and that optimal co-reactant choice differs by oxide (SOCl₂ best for TiO₂; BCl₃ best for ZrO₂).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Substrate|Co-reactants Compared|Temperature Range (°C)|Trend Summary|\\n|----------|---------------------|----------------------|-------------|\\n|TiO₂|BCl₃, SOCl₂, TiCl₄|160–190|Etch rate increases with T; SOCl₂ highest, TiCl₄ lowest|\"},{\"panel_id\":\"b\",\"text\":\"| Substrate|Co-reactants Compared|Temperature Range (°C)|Trend Summary|\\n|----------|---------------------|----------------------|-------------|\\n|ZrO₂|BCl₃, SOCl₂, TiCl₄|250–325|BCl₃ highest and strongly T-dependent; SOCl₂ nearly flat|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plots clearly show that SOCl₂ provides the highest etch rates for TiO₂ across the tested temperatures, identifying it as the most efficient co-reactant for TiO₂ ALE. For ZrO₂, BCl₃ exhibits by far the strongest temperature-driven increase in etch rate, making it the preferred co-reactant for high-performance etching. TiCl₄ remains intermediate for both oxides, while SOCl₂ performs poorly on ZrO₂. These relationships help determine suitable chemistries and processing windows for selective, optimized ALE.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, both TiO₂ and ZrO₂ show higher etch rates at elevated temperatures, demonstrating thermally activated reaction kinetics.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Volatility of the reaction by-products (e.g., ZrCl₄, TiCl₄, WOCl₄), Stability of intermediate fluorides or sulfates, Activation energy of the ligand-exchange step, Ability of each co-reactant to remove fluorinated surface species\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"BCl₃ shows the steepest increase in etch rate with temperature for ZrO₂, significantly outperforming SOCl₂ and TiCl₄.\"}]}]","bbox":[{"panel_id":"a","x":12,"y":0,"width":527,"height":433},{"panel_id":"b","x":552,"y":0,"width":529,"height":435}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/Comparison of BCl3, TiCl4, and SOCl2 chlorinating agents for.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1081,"height":439,"image_format":"jpeg","image_sha256":"03381831d7ebb13107724f64f9f7bcc2cc77857d121bb69af5017e0ccaea9912","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_35_fig_7.jpg","caption":"FIG. 7. (a) In situ ellipsometry and [(b)-(d)] Auger electron spectroscopy measurements of $\\mathrm{TiO_2}$ thermal ALE using $\\mathrm{WF_6}$ and $\\mathrm{BCl_3}$ , $\\mathrm{SOCl_2}$ , or $\\mathrm{TiCl_4}$ at $170^{\\circ}\\mathrm{C}$ . The ellipsometry data were collected after every ALE cycle, while AES measurements were done before etching and after 5 and 25 ALE cycles.","id":"test/atomic-layer-etching/experimental-usecase/35/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/35/fig_7","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows TiO₂ thickness measured by in-situ ellipsometry during repeated ALE cycles at 170 °C for three chemistries. All curves fall to zero (film removed), but WF₆/SOCl₂ removes TiO₂ fastest, WF₆/TiCl₄ is intermediate, and WF₆/BCl₃ is slowest — each trace shows the number of cycles to full removal and the characteristic self-limiting stepwise decrease.\"},{\"panel_id\":\"b\",\"text\":\"shows AES time-series measured before etching and after 5 and 25 cycles for each chemistry. They track surface composition (O, Ti, Si, W, B, C, Cl etc.). AES corroborates ellipsometry: the Si substrate signal rises as TiO₂ is removed, while different chemistries leave distinct residues — e.g. measurable B for BCl₃, little residue for SOCl₂, and higher Cl/W signals for TiCl₄ — indicating differences in by-product volatility and surface cleanliness.\"},{\"panel_id\":\"c\",\"text\":\"shows AES time-series measured before etching and after 5 and 25 cycles for each chemistry. They track surface composition (O, Ti, Si, W, B, C, Cl etc.). AES corroborates ellipsometry: the Si substrate signal rises as TiO₂ is removed, while different chemistries leave distinct residues — e.g. measurable B for BCl₃, little residue for SOCl₂, and higher Cl/W signals for TiCl₄ — indicating differences in by-product volatility and surface cleanliness.\"},{\"panel_id\":\"d\",\"text\":\"shows AES time-series measured before etching and after 5 and 25 cycles for each chemistry. They track surface composition (O, Ti, Si, W, B, C, Cl etc.). AES corroborates ellipsometry: the Si substrate signal rises as TiO₂ is removed, while different chemistries leave distinct residues — e.g. measurable B for BCl₃, little residue for SOCl₂, and higher Cl/W signals for TiCl₄ — indicating differences in by-product volatility and surface cleanliness.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALE Cycles | WF6/SOCl2 Thickness (nm) | WF6/TiCl4 Thickness (nm) | WF6/BCl3 Thickness (nm) |\\n|------------|-------------------------|--------------------------|-------------------------|\\n| 0 | 1.9 | 1.7 | 1.8 |\\n| 2 | 1.5 | 1.4 | 1.3 |\\n| 4 | 1.2 | 1.1 | 0.9 |\\n| 6 | 0.9 | 0.8 | 0.5 |\\n| 8 | 0.5 | 0.4 | 0.2 |\\n| 10 | 0.1 | 0.1 | 0.0 |\\n| ≥12 | 0.0 | 0.0 | 0.0 |\"},{\"panel_id\":\"b\",\"text\":\"| ALE Cycles | Si (%) | O (%) | Ti (%) | B (%) | Cl (%) | C (%) |\\n|------------|--------|-------|--------|-------|--------|-------|\\n| 0 | 5 | 55 | 20 | 15 | 3 | 2 |\\n| 5 | 60 | 25 | 8 | 5 | 1 | 1 |\\n| 10 | 65 | 25 | 5 | 3 | 1 | 1 |\\n| 25 | 70 | 25 | 3 | 1 | 1 | 2 |\"},{\"panel_id\":\"c\",\"text\":\"| ALE Cycles | Si (%) | O (%) | Ti (%) | W (%) | Cl (%) | C (%) |\\n|------------|--------|-------|--------|-------|--------|-------|\\n| 0 | 5 | 55 | 20 | 10 | 5 | 5 |\\n| 5 | 45 | 35 | 10 | 6 | 3 | 1 |\\n| 10 | 55 | 38 | 5 | 2 | 0 | 0 |\\n| 25 | 65 | 40 | 2 | 1 | 0 | 0 |\"},{\"panel_id\":\"d\",\"text\":\"| ALE Cycles | Si (%) | O (%) | Ti (%) | Cl (%) | C (%) |\\n|------------|--------|-------|--------|--------|-------|\\n| 0 | 5 | 55 | 20 | 10 | 10 |\\n| 5 | 50 | 28 | 12 | 6 | 4 |\\n| 10 | 60 | 30 | 6 | 3 | 1 |\\n| 25 | 70 | 30 | 3 | 1 | 0 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The AES results show that SOCl₂ leaves minimal surface contamination and enables rapid, complete removal of TiO₂, making it the most effective co-reactant. WF₆/BCl₃ leaves boron residues, and WF₆/TiCl₄ leaves significant chlorine and tungsten species, suggesting poorer by-product volatility. Therefore, SOCl₂ provides the cleanest and most efficient ALE chemistry for TiO₂ at 170 °C.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, ellipsometry shows a stepwise, self-limiting decrease in TiO₂ thickness across ALE cycles for all chemistries, confirming self-limiting etching behavior.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Chlorine residues (especially for WF₆/TiCl₄), Boron residues (for WF₆/BCl₃), Detected tungsten signal (from WF₆ fluorination step), Carbon traces in some conditions\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SOCl₂ removes TiO₂ the fastest, TiCl₄ is intermediate, and BCl₃ is the slowest.\"}]}]","bbox":[{"panel_id":"a","x":205,"y":4,"width":723,"height":441},{"panel_id":"b","x":13,"y":449,"width":381,"height":325},{"panel_id":"c","x":393,"y":449,"width":343,"height":325},{"panel_id":"d","x":735,"y":449,"width":346,"height":325}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/Comparison of BCl3, TiCl4, and SOCl2 chlorinating agents for.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1083,"height":775,"image_format":"jpeg","image_sha256":"a8f0edbe7b043bafc30cbedfc51762de6e15a1a3a7fa3b0b36f7feee9e3ba5b0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_35_fig_8.jpg","caption":"FIG. 8. (a) In situ ellipsometry and [(b)-(d)] Auger electron spectroscopy measurements of $\\mathrm{ZrO_2}$ thermal ALE using $\\mathrm{WF_6}$ and $\\mathrm{BCl_3}$ , $\\mathrm{SOCl_2}$ , or $\\mathrm{TiCl_4}$ at $325^{\\circ}\\mathrm{C}$ . The ellipsometry data were collected after every ALE cycle, while AES measurements were done before etching and after 5 and 25 ALE cycles.","id":"test/atomic-layer-etching/experimental-usecase/35/fig_8","sample_id":"atomic-layer-etching/experimental-usecase/35/fig_8","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows ZrO₂ thickness measured during repeated ALE cycles at 325 °C. WF₆/BCl₃ removes ZrO₂ fastest (film gone in ~3 cycles), WF₆/TiCl₄ is slightly slower (~4–5 cycles), and WF₆/SOCl₂ is ineffective (film persists after 25 cycles). The curves demonstrate self-limiting removal for the effective chemistries and a clear chemistry-dependent rate.\"},{\"panel_id\":\"b\",\"text\":\"present AES composition measured before etching and after 5 and 25 cycles for each chemistry. AES corroborates ellipsometry: for BCl₃, Zr and O drop rapidly and B residues appear; for SOCl₂, S signal is detectable and Zr/O remain high (sulfate formation and poor removal); for TiCl₄, Zr decreases moderately while Cl/W signatures indicate incomplete volatile conversion. Together the panels link kinetics (how quickly ZrO₂ is removed) with surface chemistry (what residues form), explaining why BCl₃ is optimal for ZrO₂ ALE and SOCl₂ fails.\"},{\"panel_id\":\"c\",\"text\":\"present AES composition measured before etching and after 5 and 25 cycles for each chemistry. AES corroborates ellipsometry: for BCl₃, Zr and O drop rapidly and B residues appear; for SOCl₂, S signal is detectable and Zr/O remain high (sulfate formation and poor removal); for TiCl₄, Zr decreases moderately while Cl/W signatures indicate incomplete volatile conversion. Together the panels link kinetics (how quickly ZrO₂ is removed) with surface chemistry (what residues form), explaining why BCl₃ is optimal for ZrO₂ ALE and SOCl₂ fails.\"},{\"panel_id\":\"d\",\"text\":\"present AES composition measured before etching and after 5 and 25 cycles for each chemistry. AES corroborates ellipsometry: for BCl₃, Zr and O drop rapidly and B residues appear; for SOCl₂, S signal is detectable and Zr/O remain high (sulfate formation and poor removal); for TiCl₄, Zr decreases moderately while Cl/W signatures indicate incomplete volatile conversion. Together the panels link kinetics (how quickly ZrO₂ is removed) with surface chemistry (what residues form), explaining why BCl₃ is optimal for ZrO₂ ALE and SOCl₂ fails.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALE Cycles | WF6/SOCl2 Thickness (nm) | WF6/TiCl4 Thickness (nm) | WF6/BCl3 Thickness (nm) |\\n|------------|-------------------------|--------------------------|-------------------------|\\n| 0 | 3.1 | 3.5 | 3.7 |\\n| 2 | 2.7 | 2.0 | 1.6 |\\n| 4 | 2.5 | 0.6 | 0.8 |\\n| 6 | 2.3 | 0.1 | 0.1 |\\n| 8 | 2.1 | 0.0 | 0.0 |\\n| 12 | 1.8 | 0.0 | 0.0 |\\n| 16 | 1.4 | 0.0 | 0.0 |\\n| 20 | 1.0 | 0.0 | 0.0 |\\n| 25 | 0.5 | 0.0 | 0.0 |\"},{\"panel_id\":\"b\",\"text\":\"| ALE Cycles | Al (%) | O (%) | C (%) | Zr (%) | B (%) |\\n|------------|--------|-------|-------|--------|-------|\\n| 0 | 0 | 55 | 20 | 25 | 0 |\\n| 5 | 15 | 30 | 25 | 20 | 10 |\\n| 10 | 25 | 35 | 20 | 15 | 8 |\\n| 25 | 45 | 40 | 8 | 5 | 2 |\"},{\"panel_id\":\"c\",\"text\":\"| ALE Cycles | Al (%) | O (%) | C (%) | Zr (%) | W (%) | S (%) |\\n|------------|--------|-------|-------|--------|-------|-------|\\n| 0 | 0 | 55 | 20 | 25 | 0 | 0 |\\n| 5 | 5 | 35 | 30 | 25 | 3 | 2 |\\n| 10 | 15 | 33 | 20 | 20 | 2 | 2 |\\n| 25 | 45 | 28 | 10 | 15 | 1 | 1 |\"},{\"panel_id\":\"d\",\"text\":\"| ALE Cycles | Al (%) | O (%) | C (%) | Zr (%) | W (%) | Ti (%) |\\n|------------|--------|-------|-------|--------|-------|--------|\\n| 0 | 0 | 55 | 20 | 25 | 0 | 0 |\\n| 5 | 10 | 35 | 25 | 25 | 2 | 3 |\\n| 10 | 20 | 35 | 20 | 20 | 2 | 3 |\\n| 25 | 55 | 32 | 10 | 12 | 1 | 2 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ellipsometry data show that BCl₃ and TiCl₄ enable rapid, self-limiting ZrO₂ removal, whereas SOCl₂ fails due to slow kinetics. AES confirms this by revealing B residues for BCl₃ and Cl/W residues for TiCl₄, but heavy S residues and persistent Zr/O for SOCl₂. Therefore, WF₆/BCl₃ is the most efficient chemistry for ZrO₂ ALE, while SOCl₂ should be avoided because it forms nonvolatile sulfates.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. WF₆/BCl₃ and WF₆/TiCl₄ rapidly remove ZrO₂ within a few cycles, while WF₆/SOCl₂ barely etches the film even after 25 cycles.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Sulfur-containing species (S), Persistent Zr and O (indicating unremoved oxide), Minimal exposure of the Si substrate, These suggest sulfate formation, which is nonvolatile and blocks etching.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"WF₆/BCl₃ yields the fastest ZrO₂ removal, with the film almost completely etched in about 3 cycles.\"}]}]","bbox":[{"panel_id":"a","x":211,"y":7,"width":712,"height":436},{"panel_id":"b","x":5,"y":449,"width":385,"height":326},{"panel_id":"c","x":392,"y":451,"width":343,"height":323},{"panel_id":"d","x":735,"y":450,"width":342,"height":324}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/Comparison of BCl3, TiCl4, and SOCl2 chlorinating agents for.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1080,"height":775,"image_format":"jpeg","image_sha256":"294403cc9d8f5fdf52853e928ab47e068f2c6ecc549cd1a21c0d3417c98e0054","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_35_fig_9.jpg","caption":"FIG. 9. RMS surface roughness evolution as a function of ALE cycles as measured by atomic force microscopy. The ALE of $\\mathrm{TiO_2}$ films was performed at $170^{\\circ}\\mathrm{C}$ and the $\\mathrm{ZrO_2}$ films at $325^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-etching/experimental-usecase/35/fig_9","sample_id":"atomic-layer-etching/experimental-usecase/35/fig_9","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot shows RMS surface roughness (pm) measured by AFM as a function of ALE cycles for TiO₂ (170 °C) and ZrO₂ (325 °C) using WF₆ paired with BCl₃, SOCl₂, or TiCl₄. Both materials start with higher roughness and show a rapid drop after a few cycles; ZrO₂ begins much rougher (~180–190 pm) and smooths more dramatically than TiO₂. Effective chemistries (WF₆/BCl₃ and WF₆/TiCl₄ for ZrO₂; WF₆/SOCl₂ and WF₆/TiCl₄ for TiO₂) produce greater smoothing, while SOCl₂ is least effective at smoothing ZrO₂ — matching its poor etch performance. Overall, ALE leads to net surface smoothing, and the degree of smoothing correlates with the chemistry’s etch effectiveness.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Material|Initial Roughness (0 cycles)|Roughness after 5 cycles|Roughness after 25 cycles|Trend Summary|\\n|---------|----------------------------|------------------------|-------------------------|-------------|\\n|TiO₂|~90–100 pm|Decreases for all chemistries|Further decreases; becomes smoother overall|ALE smooths TiO₂ surfaces|\\n|ZrO₂|~180–190 pm|Sharp drop for all chemistries|Chemistry-dependent smoothing; SOCl₂ least effective|ZrO₂ starts rougher but smooths strongly with effective chemistries|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Roughness evolution provides insight into how uniformly each chemistry removes material. Effective chemistries produce greater smoothing due to consistent layer removal. For TiO₂, SOCl₂ and TiCl₄ lead to smoother surfaces, while for ZrO₂, BCl₃ and TiCl₄ yield the strongest smoothing effects. In contrast, SOCl₂ produces limited smoothing on ZrO₂, reflecting its poor etch performance. Thus, AFM roughness trends help confirm which co-reactant chemistries produce uniform, high-quality ALE.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Both materials exhibit noticeable smoothing after ALE cycles, although the degree of smoothing depends on the co-reactant chemistry.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Initial surface morphology (TiO₂ smoother; ZrO₂ rougher), Reaction efficiency of each co-reactant, Volatility of reaction by-products, Uniformity of layer-by-layer removal\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ZrO₂ shows the largest reduction in roughness, dropping from ~180–190 pm initially to much lower values after 25 cycles.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":544,"height":450}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/images/fig_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/35/Comparison of BCl3, TiCl4, and SOCl2 chlorinating agents for.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":544,"height":450,"image_format":"jpeg","image_sha256":"eb057e3c6e483479fb992f76b63458f72fbca7e249306e615bad90b7d7385db1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_37_fig_2.jpg","caption":"FIG. 2. In situ ellipsometry data collected during deposition and etching steps on the Si-OH surface. (a) and (b) show the raw delta $(\\Delta)$ and psi $(\\Psi^{\\prime})$ parameters, respectively, which are fitted by a Cauchy model to (c) measure the $\\mathrm{TiO_2}$ layer thickness.","id":"test/atomic-layer-etching/experimental-usecase/37/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/37/fig_2","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the trend of Δ values over cycles for four different wavelengths (465 nm, 525 nm, 580 nm, and 635 nm). The Δ values decrease with increasing cycles until around cycle 240, after which they start to increase again.\"},{\"panel_id\":\"b\",\"text\":\"The line chart displays the constant values of Ψ for four different wavelengths (465 nm, 525 nm, 580 nm, and 635 nm) over cycles. The values remain stable throughout the cycles.\"},{\"panel_id\":\"c\",\"text\":\"The line chart illustrates the thickness of a material over cycles. The thickness increases steadily until cycle 240, after which it decreases slightly.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycles | 465 nm | 525 nm | 580 nm | 635 nm |\\n|---|---|---|---|---|\\n| 210 | 164 | 166 | 168 | 168 |\\n| 215 | 163 | 165 | 167 | 167 |\\n| 220 | 162 | 164 | 166 | 166 |\\n| 225 | 161 | 163 | 165 | 165 |\\n| 230 | 160 | 162 | 164 | 164 |\\n| 235 | 159 | 161 | 163 | 163 |\\n| 240 | 158 | 160 | 162 | 162 |\\n| 245 | 161 | 163 | 165 | 166 |\"},{\"panel_id\":\"b\",\"text\":\"| Cycles | 465 nm | 525 nm | 580 nm | 635 nm |\\n|---|---|---|---|---|\\n| 210 | 21 | 19 | 17 | 17 |\\n| 215 | 21 | 19 | 17 | 17 |\\n| 220 | 21 | 19 | 17 | 17 |\\n| 225 | 21 | 19 | 17 | 17 |\\n| 230 | 21 | 19 | 17 | 17 |\\n| 235 | 21 | 19 | 17 | 17 |\\n| 240 | 21 | 19 | 17 | 17 |\\n| 245 | 21 | 19 | 17 | 17 |\"},{\"panel_id\":\"c\",\"text\":\"| Cycles | Thickness (nm) |\\n|---|---|\\n| 210 | 4.8 |\\n| 215 | 5.0 |\\n| 220 | 5.2 |\\n| 225 | 5.4 |\\n| 230 | 5.6 |\\n| 235 | 5.8 |\\n| 240 | 6.0 |\\n| 245 | 5.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Δ decreases linearly during deposition and increases linearly during etching.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 170 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In figure 2, the raw ellipsometry parameters Ψ and Δ, measured at four wavelengths, are shown alongside the thickness extracted using a temperature-dependent Cauchy model. While Ψ remains essentially constant over the small thickness range involved, Δ exhibits a clear correlation with the TiO₂ film thickness. This demonstrates that Δ is the primary ellipsometric parameter for detecting incremental growth and removal during ALD and ALE.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ψ does not change significantly during both deposition and etching.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":8,"width":611,"height":498},{"panel_id":"b","x":5,"y":496,"width":611,"height":508},{"panel_id":"c","x":0,"y":1002,"width":616,"height":521}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/Effect of reactant dosing on selectivity during area-selective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":619,"height":1528,"image_format":"jpeg","image_sha256":"8b69b59580729319c832ee6fcf7fca6d5c1715a0743dd66d14bbfe3d0b0edb11","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_37_fig_8.jpg","caption":"FIG. 8. $\\mathrm{TiO_2}$ film thickness on $\\mathrm{Si - H}$ and $\\mathrm{Si - OH}$ surfaces during ALE/ALE super-cycles with $90~\\mathrm{ms}$ dosing conditions for $\\mathrm{TiCl_4 / H_2O}$ . The measurement was done by in situ ellipsometry, with the data point taken after every five cycles for ALD and every cycle for ALE.","id":"test/atomic-layer-etching/experimental-usecase/37/fig_8","sample_id":"atomic-layer-etching/experimental-usecase/37/fig_8","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the thickness of Si-OH and Si-H as a function of super-cycles. Both thicknesses increase linearly with increasing super-cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Super-Cycles | Thickness (nm) Si-H | Thickness (nm) Si-OH |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 5 | 0 | 4 |\\n| 10 | 0 | 8 |\\n| 15 | 0 | 13 |\\n| 20 | 0 | 17.5 |\\n| 25 | 0.5 | 22.5 |\\n| 30 | 0.5 | 25 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Si-OH and Si-H.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"30.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"90 ms for both.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"170 °C.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":672,"height":492}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/Effect of reactant dosing on selectivity during area-selective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":672,"height":492,"image_format":"jpeg","image_sha256":"504269b9a3d7a1f4bc42d1c9686a34847d9b839b84d61184f9f51951fef3e456","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_44_fig_5.jpg","caption":"FIG. 5. (Color online) Film thickness vs number of AlN ALE reaction cycles at $275^{\\circ}\\mathrm{C}$ in pure AlN region of AlN film showing results for thermal AlN ALE and plasma-enhanced ALE. (a) $\\mathrm{H}_{2}$ plasma increases AlN etch rate from $0.36$ to $1.96\\mathrm{\\AA}$ /cycle. (b) Ar plasma increases AlN etch rate from $0.36$ to $0.66\\mathrm{\\AA}$ /cycle.","id":"test/atomic-layer-etching/experimental-usecase/44/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/44/fig_5","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the thickness (Å) of AlN as a function of ALE reaction cycle number at 275 °C. Two ALE processes are compared: thermal ALE from 0 to 14 cycles and H₂ plasma-enhanced ALE from 15 to 26 cycles. The introduction of H₂ plasma increases the AlN etch rate from 0.36 to 1.96 Å/cycle.\"},{\"panel_id\":\"b\",\"text\":\"The line chart shows the thickness (Å) of AlN as a function of ALE reaction cycle number at 275 °C. Two ALE processes are compared: thermal ALE from 0 to 14 cycles and Ar plasma-enhanced ALE from 15 to 26 cycles. The use of Ar plasma increases the AlN etch rate from 0.36 to 0.66 Å/cycle. This image clearly indicates that Ar Plasma enhnaced ALE shows a higher etch rate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle Number | Thickness (Å) |\\n|---|---|\\n| 0 | 450 |\\n| 4 | 449 |\\n| 8 | 447 |\\n| 12 | 446 |\\n| 16 | 441 |\\n| 20 | 433 |\\n| 24 | 438 |\\n| 28 | 425 |\"},{\"panel_id\":\"b\",\"text\":\"| Cycle Number | Thickness (Å) |\\n|---|---|\\n| 0 | 438 |\\n| 4 | 436 |\\n| 8 | 435 |\\n| 12 | 433 |\\n| 16 | 430 |\\n| 20 | 428 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"HF Pulse & Purge.\\n\\n, Sn(acac)₂ Pulse & Purge.\\n\\n, H₂ Plasma Exposure (new step).\\n\\n, Purge.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"H₂ plasma provides a ~5x enhancement (chemical), while Ar plasma gives only a ~2x enhancement (physical). This reveals the trade-off: H₂ plasma offers higher efficiency via chemical radical reactions (removing blocking ligands), but may introduce more hydrogen incorporation. Ar plasma offers a cleaner, purely physical enhancement (ion/radiation) but with significantly lower etch rate gains, requiring a balance between speed and potential plasma-induced damage or impurity introduction.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Residual acac surface species (ligands) that block reactive sites.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ar plasma may be better suited for high-aspect-ratio features because it avoids the radical depletion and non-uniformity issues that H₂ radicals can cause in deep trenches. While slower, its more isotropic ion-driven enhancement can improve etch conformity and reduce loading effects in complex geometries.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":5,"width":592,"height":530},{"panel_id":"b","x":0,"y":550,"width":601,"height":530}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/Thermal atomic layer etching of crystalline aluminum nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":605,"height":1083,"image_format":"jpeg","image_sha256":"4442b55d732128cfd726cfc195a60c74235cf28ae1301645f198389631099f3a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG1.jpg","caption":"FIG. 1. Values of Gibbs free energy change for oxidation reactions of molybdenum to $\\mathrm{MoO}_2$ and $\\mathrm{MoO}_3$ with $\\mathrm{H}_2\\mathrm{O}$ , $\\mathrm{N}_2\\mathrm{O}$ , $\\mathrm{O}_2$ , and $\\mathrm{O}_3$ at $0 - 500^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-etching/experimental-usecase/47/FIG1","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG1","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the Gibbs free energy change (ΔG) for various reactions of molybdenum (Mo) with different oxidants at different temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction | ΔG Range (kJ/mol) | Trend with Temperature |\\n|----------------------------------------------|--------------------|-------------------------|\\n| Mo + 3 H₂O(g) → MoO₃ + 3 H₂(g) | ~0 to +100 | Slightly increases |\\n| Mo + H₂O(g) → MoO₂ + H₂(g) | ~-200 to -100 | Increases |\\n| Mo + O₂(g) → MoO₂ | ~-600 to -500 | Increases |\\n| Mo + 1.5 O₂(g) → MoO₃ | ~-600 to -500 | Increases |\\n| Mo + 2 N₂O(g) → MoO₂ + 2 N₂(g) | ~-800 to -700 | Increases |\\n| Mo + 2 O₃(g) → MoO₂ + O₂(g) | ~-900 to -800 | Increases |\\n| Mo + 3 N₂O(g) → MoO₃ + 3 N₂(g) | ~-1000 to -900 | Increases |\\n| Mo + 3 O₃(g) → MoO₃ + O₂(g) | ~-1100 to -1000 | Increases |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Gibbs free energy changes of the oxidation reactions of molybdenum using H2O, N2O, O2, and O3 as oxidizing agents were calculated to understand the feasibility of ALE\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"MoO2 and MoO3 were considered, as they can form volatile chlorides and oxychlorides via deoxychlorination reactions with NbCl5. Oxides with lower oxidation states were also not available in the thermodynamic database.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The energy changes are negative over the whole temperature range, except for the reaction with H2O, which has a positive Gibbs free energy change in this temperature range.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":6,"width":664,"height":533}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":669,"height":542,"image_format":"jpeg","image_sha256":"af6ab55fe4fc356703b246e5ba4baa6f56512cb113634fb9e0f4996466331fc9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG2.jpg","caption":"FIG. 2. Values of Gibbs free energy changes of etching reactions of $\\mathrm{MoO}_2$ and $\\mathrm{MoO}_3$ with $\\mathrm{NbCl}_5$ at $0 - 500^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-etching/experimental-usecase/47/FIG2","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG2","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the gibbs free energy changes as a function of temperature for various chemical reactions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction | ΔG Range (kJ/mol) | Trend with Temperature |\\n|--------------------------------------------------------------|--------------------|-------------------------|\\n| MoO₂ + NbCl₅(g) → MoOCl₂(g) + NbOCl₃(g) | ~150 to ~50 | Decreases |\\n| MoO₃ + 3 NbCl₅(g) → MoCl₆(g) + 3 NbOCl₃(g) | ~120 to ~20 | Decreases |\\n| MoO₂ + 2 NbCl₅(g) → MoOCl₄(g) + 2 NbOCl₃(g) | ~50 to ~-50 | Decreases |\\n| MoO₃ + 2 NbCl₅(g) → MoOCl₄(g) + 2 NbOCl₃(g) | ~0 to ~-100 | Decreases |\\n| MoO₃ + NbCl₅(g) → MoO₂Cl₂(g) + NbOCl₃(g) | ~-50 to ~-150 | Decreases |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etching of oxides occurs by deoxychlorination, producing NbOCl3 and molybdenum chlorides or oxychlorides as reaction products. MoCl4 is the only thermodynamically favorable etch product for MoO2 and is able to form above 200 °C. Conversion of MoO2 to a solid MoOCl2 is also favorable, but etching via this reaction pathway is prevented by the low volatility of MoOCl2\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For MoO3, full chlorination is not thermodynamically favorable, but both MoO2Cl2 and MoOCl4 are possible etch products above about 20 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etching of metallic molybdenum by NbCl5 alone was also considered. Possible reactions leading to continuous etching would be oxidation of the metallic Mo to either MoCl4 or MoCl6 by NbCl5, which itself would be reduced to NbCl4. Neither reaction is thermodynamically favorable as both have highly positive Gibbs free energy changes at 0–500 °C. This indicates that continuous etching of Mo by NbCl5 is not an issue for this process, but does not mean that NbCl5 is completely inert toward Mo\"}]}]","bbox":[{"panel_id":"a","x":4,"y":6,"width":664,"height":534}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":669,"height":542,"image_format":"jpeg","image_sha256":"279faf211e5037756e795bcacfe2e1aa2346ed3086f9699677333f502ef3fbd9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG3.jpg","caption":"FIG. 3. Equilibrium composition for an input of $0.1\\mathrm{kmol}$ $\\mathrm{NbCl}_5$ and $0.02\\mathrm{kmol}$ Mo at 10 mbar pressure. $5\\mathrm{kmol}$ of $\\mathbb{N}_2$ was used as background gas to approximate the partial pressure of $\\mathrm{NbCl}_5$ in the reactor setup used in this paper.","id":"test/atomic-layer-etching/experimental-usecase/47/FIG3","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG3","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the amount of various chlorides (NbCl₄(s), NbCl₅(s), MoCl₃(s), NbCl₃(s), NbCl₂.67(s), NbCl₄(g), MoCl₂(s), MoCl₄(g)) in kmol as a function of temperature in °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | NbCl₅(g) | NbCl₅(s) | NbCl₄(s) | NbCl₄(g) | NbCl₃(s) | NbCl₂.₆₇(s) | MoCl₃(s) | MoCl₂(s) | MoCl₄(g) |\\n|-------------------|----------|----------|----------|----------|----------|-------------|----------|----------|----------|\\n| 0 | 0 | 0.04 | 0.06 | 0 | 0 | 0 | 0.02 | 0 | 0 |\\n| 50 | 0.01 | 0.04 | 0.05 | 0 | 0 | 0 | 0.02 | 0 | 0 |\\n| 100 | 0.05 | 0.03 | 0.02 | 0.005 | 0 | 0 | 0.02 | 0 | 0 |\\n| 150 | 0.07 | 0.01 | 0.005 | 0.01 | 0.015 | 0.005 | 0.02 | 0 | 0 |\\n| 200 | 0.07 | 0 | 0 | 0.015 | 0.02 | 0.01 | 0.02 | 0 | 0 |\\n| 250 | 0.07 | 0 | 0 | 0.02 | 0.015 | 0.015 | 0.02 | 0.005 | 0.005 |\\n| 300 | 0.07 | 0 | 0 | 0.025 | 0.01 | 0.015 | 0.02 | 0.01 | 0.01 |\\n| 350 | 0.07 | 0 | 0 | 0.03 | 0.005 | 0.015 | 0.02 | 0.015 | 0.015 |\\n| 400 | 0.07 | 0 | 0 | 0.035 | 0 | 0.015 | 0.02 | 0.02 | 0.02 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Equilibrium composition calculated by minimizing the Gibbs\\nfree energy of the system when Mo and NbCl5(g) are given as the\\nstarting materials indicates that they can react to form nonvolatile\\nMoCl3 and various lower niobium chlorides (Fig. 3). Below 150 °C,\\nthe dominant Nb-containing species is solid NbCl4, and above this\\ntemperature up to 400 °C, the reacted NbCl5 is mostly expected to\\nform NbCl3 and Nb3Cl8. Once the oxidized surface layer has been\\netched, these lower chlorides could form a layer that prevents\\nfurther reactions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Equilibrium composition calculated by minimizing the Gibbs free energy of the system when Mo and NbCl5(g) are given as the starting materials indicates that they can react to form nonvolatile MoCl3 and various lower niobium chlorides.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Below 150 °C, the dominant Nb-containing species is solid NbCl4, and above this temperature up to 400 °C, the reacted NbCl5 is mostly expected to\\nform NbCl3 and Nb3Cl8. Once the oxidized surface layer has been etched, these lower chlorides could form a layer that prevents further reactions.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Equilibrium compositions of both NbCl3 and MoCl3 were calculated in the presence of excess O2 to evaluate their effect on the etching process. It was\\nfound that for NbCl3 the most thermodynamically favorable product is NbO2Cl below about 240 °C and Nb2O5 above it. For MoCl3, the product is MoO3 below 350 °C and gaseous MoO2Cl2 above 350 °C. This indicates that if the lower chlorides are formed, they are readily oxidized and then etched in the subsequent ALE cycle, as NbCl5 has been shown to also etch Nb2O5\"}]}]","bbox":[{"panel_id":"a","x":5,"y":3,"width":665,"height":520}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":673,"height":528,"image_format":"jpeg","image_sha256":"89930675ddc469508084cf51e8d9e32177e4451374dc00d4b8d2f80eca645281","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_fig_4.jpg","caption":"Fig. 4 - Reaction progression of half-cycles for both steps over time with an operating temperature of 573 K. The full progression is achieved at 1.38 s for Step A and 2.38 s for Step B, respectively.","id":"test/atomic-layer-etching/simulation-usecase/11/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/11/fig_4","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Kinetic Monte Carlo simulation results showing the progression of half-cycle completion (%) versus time for both ALE steps at 573 K. Step A (HF fluorination, blue) reaches 100% surface coverage at 1.38 s, while Step B (TMA etching, orange) completes at 2.38 s. Both curves show rapid initial progress followed by a gradual approach to saturation, characteristic of self-limiting ALE surface reactions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Step A (%) | Step B (%) |\\n|---|---|---|\\n| 0.00 | 0 | 0 |\\n| 0.05 | 16 | 0 |\\n| 0.10 | 41 | 10 |\\n| 0.15 | 50 | 25 |\\n| 0.20 | 64 | 38 |\\n| 0.25 | 72 | 48 |\\n| 0.30 | 77 | 56 |\\n| 0.40 | 84 | 68 |\\n| 0.50 | 91 | 78 |\\n| 0.60 | 94 | 82 |\\n| 0.80 | 98 | 91 |\\n| 1.00 | 99 | 95 |\\n| 1.25 | 99.5 | 96 |\\n| 1.50 | 100 | 98 |\\n| 2.00 | 100 | 99.5 |\\n| 2.50 | 100 | 100 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Step B (TMA etching) involves a more complex reaction mechanism with multiple sequential steps including TMA adsorption, ligand exchange, and DMAF desorption at two different reaction sites (l-AlF2 and r-AlF3). Additionally, TMA has a lower sticking coefficient (0.02) compared to HF (0.15), which slows the adsorption kinetics. The requirement for multiple TMA molecules to complete the etching at each unit cell further extends the process time.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The stepwise jumps reflect the discrete nature of the kMC simulation, where individual reaction events occur stochastically at specific time intervals rather than continuously.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For Step A, 100% means complete fluorination of the Al2O3 surface as AlF3; for Step B, 100% means complete removal of the fluorinated layer through DMAF volatilization.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The simulated times agree well with experiments. For Step A, experiments showed self-limiting behavior after 1.0 s of HF exposure with no significant change after 1.5 s, consistent with the simulated 1.38 s. For Step B, experiments indicated completion after approximately 2.25 s of TMA exposure, closely matching the simulated 2.38 s. This agreement validates the kMC model.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":607,"height":445}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":609,"height":450,"image_format":"jpeg","image_sha256":"dc452a2b98d9de89fd573d1a6a4878896833900a6fedab44bb145db6a7503f5a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_14_fig_1.jpg","caption":"Fig. 1. Changes in the heights of the material surfaces during $300\\mathrm{eV}$ $\\mathrm{Ar^{+}}$ ion irradiation, obtained from MD simulations. With HFC, an about $2\\mathrm{nm}$ thick HFC layer was deposited on the flat model SiN surface. Without HFC, the flat model SiN surface was etched without HFC deposition. The horizontal axis represents the ion dose. Two vertical broken lines delineate different desorption regimes I, II, and, III, discussed in the main text. For the atomic representations of the surfaces, the reader is referred to section II of the Supplementary Material.","id":"test/atomic-layer-etching/simulation-usecase/14/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/14/fig_1","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart presents depth (in nm) versus ion dose (in ×10¹⁶ ions/cm²) for Ar⁺ bombardment under two experimental conditions: with and without hydrofluorocarbon (HFC). The sample treated with HFC initially shows greater surface material removal (positive depth), followed by gradual etching until reaching a net depth loss similar to the untreated case. Three regimes (I–III) are marked with dashed lines, indicating transitions in material removal behavior. The untreated sample displays relatively consistent shallow etching across the dose range.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion Dose (×10¹⁶ ions cm⁻²) | Depth [nm] with HFC | Depth [nm] without HFC |\\n|----------------------------|---------------------|-------------------------|\\n| 0.0 | 2.0 | 0.1 |\\n| 0.2 | 1.5 | 0.0 |\\n| 0.5 | 1.0 | -0.1 |\\n| 0.8 | 0.4 | -0.2 |\\n| 1.0 | 0.0 | -0.3 |\\n| 1.2 | -0.2 | -0.4 |\\n| 1.5 | -0.4 | -0.5 |\\n| 2.0 | -0.6 | -0.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Depth (nm) change of the sample surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The segmentation into regions I, II, and III indicates distinct phases of the etching process. In Region I, there is rapid removal of material in the HFC-treated sample, likely due to a reactive surface layer. Region II shows a slower reduction, suggesting the surface becomes more resistant to ion bombardment. Region III stabilises, implying that a steady-state etch rate is reached. This behavior contrasts with the untreated sample, which exhibits a relatively linear and shallow etch throughout.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Catalytic effect of HFC, Surface conditioning with Ar⁺, Ion dose optimization, Reaction regime identification\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":667,"height":619}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/Molecular dynamics simulations of silicon nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":667,"height":619,"image_format":"jpeg","image_sha256":"8114977bbf93a24caf2b3de6184bafa11395fe2e27caec1c6c83bd653a01aab7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_14_fig_2.jpg","caption":"Fig. 2. Changes in the heights of the material surface during three-step SiN PE-ALE with (a) $\\mathrm{Ar^{+}}$ b $\\mathrm{Kr^{+}}$ and (c) $\\mathrm{Xe^{+}}$ ion irradiations over the first five cycles, obtained from MD simulations. Each FE-ALE cycle consists of the adsorption step (denoted by $①$ , desorption step $(2)$ , and oxidation step $(3)$ . The lower curves denoted as physical suttering indicate the changes in the SIN material surface positions by physical suttering with the corresponding ions as functions of the ion dose. For the curves representing the PE-ALE processes, the height changes are also represented as functions of the ion dose during the desorption step and a unit length of the horizontal axis represents the same ion dose for both PE-ALE and physical sputtering curves. The PE-ALE simulation conditions are summarized in Table I.","id":"test/atomic-layer-etching/simulation-usecase/14/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/14/fig_2","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares atomic layer etching (ALE) and physical sputtering depths over five cycles for three different noble gas ions: Ar⁺, Kr⁺, and Xe⁺. In each subplot, the ALE condition (black line) shows periodic, steep decreases in surface depth, indicating controlled etching per cycle. In contrast, the red traces for physical sputtering display minimal and more linear depth reduction, suggesting that physical sputtering alone removes significantly less material per cycle. The graphs are labeled with Roman numerals (I–III) that denote distinct etch regions, possibly representing phases of material response or tool behavior during processing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle | ALE Depth [nm] | Sputtering Depth [nm] |\\n|-------|----------------|------------------------|\\n| 0 | 0 | 0 |\\n| 1 | 1.9 | -0.2 |\\n| 2 | 3.5 | -0.4 |\\n| 3 | 5.2 | -0.6 |\\n| 4 | 7.0 | -0.8 |\\n| 5 | 8.5 | -1.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Cycle | ALE Depth [nm] | Sputtering Depth [nm] |\\n|-------|----------------|------------------------|\\n| 0 | 0 | 0 |\\n| 1 | 2.1 | -0.3 |\\n| 2 | 4.3 | -0.6 |\\n| 3 | 6.2 | -0.8 |\\n| 4 | 8.1 | -1.0 |\\n| 5 | 9.8 | -1.2 |\"},{\"panel_id\":\"c\",\"text\":\"| Cycle | ALE Depth [nm] | Sputtering Depth [nm] |\\n|-------|----------------|------------------------|\\n| 0 | 0 | 0 |\\n| 1 | 2.3 | -0.4 |\\n| 2 | 4.7 | -0.7 |\\n| 3 | 7.0 | -1.0 |\\n| 4 | 9.3 | -1.3 |\\n| 5 | 11.5 | -1.5 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"To evaluate the effectiveness and control of etching using noble gas ions (Ar⁺, Kr⁺, Xe⁺) under ALE and sputtering conditions\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Xe⁺, Kr⁺, Ar⁺\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The labeled regions likely denote distinct etching regimes: Region I shows the initial rapid etching response, possibly due to surface activation or reactive layer removal. Region II marks a more stable, consistent etch rate per cycle, typical of self-limiting ALE behavior. Region III may indicate a saturation or termination phase, where etch depth stabilises or material is fully removed.\"}]}]","bbox":[{"panel_id":"a","x":9,"y":0,"width":655,"height":507},{"panel_id":"b","x":740,"y":0,"width":652,"height":508},{"panel_id":"c","x":375,"y":555,"width":650,"height":498}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/Molecular dynamics simulations of silicon nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1392,"height":1053,"image_format":"jpeg","image_sha256":"dbea9967a3cfd22ea9fe0541034b9b839f10415c303a0217d23bd56629ab172a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_14_fig_4.jpg","caption":"Fig. 4. Depth profiles of atomic concentrations at the end of the oxidation step of the first SiN PE-ALE cycle with (a) $\\mathrm{Ar^{+}}$ , (b) $\\mathrm{Kr^{+}}$ , and (c) $\\mathrm{Xe^{+}}$ ion irradiations, obtained from MD simulations.","id":"test/atomic-layer-etching/simulation-usecase/14/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/14/fig_4","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares atomic density profiles across depth for six or seven different elements under three experimental conditions: Ar (a), Kr (b), and Xe (c) ion exposure. In each case, the profiles illustrate how specific elements (e.g., H, O, C, Si, N) are distributed within and near the surface layers. The presence and penetration depth of each element vary depending on the ion species used, with notable differences in how deeply Ar, Kr, and Xe penetrate the material and affect the distribution of native and implanted species.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Depth [nm] | Atomic density [x 1023/cm3] |\\n|---|---|\\n|-6 | 0 |\\n|-5 | 0 |\\n|-4 | 0 |\\n|-3 | 0 |\\n|-2 | 0 |\\n|-1 | 0 |\\n| 0 | 0 |\\n| 1 | 0 |\\n| 2 | 0 |\\n| 3 | 0 |\\n| 4 | 0 |\\n| 5 | 0 |\\n| 6 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Depth [nm] | Atomic density [x 1023/cm3] |\\n|---|---|\\n|-6 | 0 |\\n|-5 | 0 |\\n|-4 | 0 |\\n|-3 | 0 |\\n|-2 | 0 |\\n|-1 | 0 |\\n| 0 | 0 |\\n| 1 | 0 |\\n| 2 | 0 |\\n| 3 | 0 |\\n| 4 | 0 |\\n| 5 | 0 |\\n| 6 | 0 |\"},{\"panel_id\":\"c\",\"text\":\"| Depth [nm] | Atomic density [x 1023/cm3] |\\n|---|---|\\n|-6 | 0 |\\n|-5 | 0 |\\n|-4 | 0 |\\n|-3 | 0 |\\n|-2 | 0 |\\n|-1 | 0 |\\n| 0 | 0 |\\n| 1 | 0 |\\n| 2 | 0 |\\n| 3 | 0 |\\n| 4 | 0 |\\n| 5 | 0 |\\n| 6 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ion species used for exposure: Ar in (a), Kr in (b), and Xe in (c).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ar: shows deeper penetration, Kr: intermediate penetration , Xe: least penetration\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The depth-dependent profiles indicate that heavier ions like Xe tend to stay near the surface, likely due to lower penetration power and stronger localised interaction, while lighter ions like Ar penetrate deeper into the material. This trend supports the hypothesis that ion mass influences the energy transfer efficiency and resulting implantation depth, which could be critical in tailoring surface modifications or etch profiles in atomic-scale processing\"}]}]","bbox":[{"panel_id":"a","x":11,"y":10,"width":439,"height":734},{"panel_id":"b","x":483,"y":10,"width":438,"height":734},{"panel_id":"c","x":953,"y":9,"width":430,"height":735}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/Molecular dynamics simulations of silicon nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1383,"height":744,"image_format":"jpeg","image_sha256":"5063d7e67b4d6983cdc2546da3ce3c0a96f9ccca31953e5e83f1e4713f2a57e3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_18_fig_3.jpg","caption":"FIG. 3. Free energy profile for the SE1 (blue) and SL1 (orange) reactions of $\\mathsf{aHfO_2}$ from 0 to $1000\\mathrm{K}$ at the pressures given in the text. T1 is where the SL and SE reactions cross over for the 80/16F model, and T2 is where spontaneous etching is preferred.","id":"test/atomic-layer-etching/simulation-usecase/18/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/18/fig_3","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the change in Gibbs free energy (ΔG) per HfO₂ unit as a function of temperature. \\\"Preferred self-limiting\\\", \\\"Preferred etching\\\" and \\\"Purely etching\\\" regions are highlighted as well as T1 and T2 temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature [K] | SE1 | SL1 |\\n| --- | --- | --- |\\n| 0 | -1.3 | -3.8 |\\n| 200 | -1.3 | -3.2 |\\n| 400 | -1.3 | -2.4 |\\n| 600 | -1.2 | -1.8 |\\n| 800 | -1.1 | -0.8 |\\n| 1000 | -1.0 | 0.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"T2 is the point at which spontaneous etching is favoured.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For the SL1 reaction (orange line), the change in the Gibbs free energy values increases from -3.8 eV/HfO2 to nearly 0, as the temperature rises from 0 K to 1000 K.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the figure, self-limiting behavior is preferred from 0 to 718 K.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The temperature at which different self-limited conversion or spontaneous etching of aHfO2 occur can be observed. Therefore, it is possible to control the regime by adjusting the operating temperature.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":6,"width":528,"height":478}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/Origin of enhanced thermal atomic layer etching of amorphous HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":534,"height":486,"image_format":"jpeg","image_sha256":"47f12f35c3e5c7f1ea123d1f249b05e41ed81fdaa4b780f57858d2a603ecb620","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_18_fig_4.jpg","caption":"FIG. 4. Free energy profiles of the spontaneous etching and self-limiting reactions for $\\mathrm{aHfO_2}$ . T1, T2, and T3 are the temperatures where the self-limiting and spontaneous etch reactions cross over for 80/16F, 100/20F, and 16O/32F models, respectively.","id":"test/atomic-layer-etching/simulation-usecase/18/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/18/fig_4","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the Gibbs free energy (ΔG) change per HfO₂ molecule as a function of temperature. Three lines represent different hydrogen fluoride (HF) concentrations (16 HF, 20 HF) and (32 HF). Three different temperatures are highlighted T1=718 K, T2=770 K and T3=1302 K.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature [K] | 16HF | 20HF | 32HF |\\n| --- | --- | --- | --- |\\n| 0 | -3.8 | -3.8 | -5.2 |\\n| 400 | -2.2 | -2.2 | -4.0 |\\n| 800 | -0.8 | -1.0 | -2.6 |\\n| 1200 | 1.2 | 0.6 | -1.2 |\\n| 1600 | 3.0 | 2.2 | 0.4 |\\n| 2000 | 4.4 | 3.2 | 1.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Three different HF concentrations were studied: 16 HF, 20 HF and 32 HF.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Gibbs free energy increases with the temperature for all of the concentrations. All of them show the same behavior with the temperature.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the figure, the concentration of 16 HF shows higher Gibbs free energu values as a function of the temperature.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"T1, T2 and T3 represent the temperatures where the self-limiting and spontaneous etch reaction cross over for different models with different concentrations of O to F.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":6,"width":534,"height":464}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/Origin of enhanced thermal atomic layer etching of amorphous HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":539,"height":470,"image_format":"jpeg","image_sha256":"7b99d3219ba4ed527a1ef55adb7cd5bb37dacc502946fbb8caf7ecded6b1ff9f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_4.jpg","caption":"Figure 4. Contributions to the reaction FEP of the SE1 reaction of $\\mathrm{HfO}_2$ shown in Table 1. $RT\\ln (Q)$ in gold accounts for the partial pressures of the reactants and products, enthalpic contribution $(\\Delta W)$ is given in dark blue, entropy term $(T\\Delta S)$ in gray, reaction energy $(\\Delta E)$ in light blue, the sum of reaction energy and zero-point energy change $(\\Delta E + \\Delta \\mathrm{ZPE})$ in brown, and reaction free energy $(\\Delta G)$ in green.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_4","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_4","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multiple-line chart showing the temperature dependence of individual contributions to the reaction free energy for the SE1 etching reaction of HfO₂ with HF. The plot separates constant energetic terms (ΔE, ΔE+ΔZPE) from temperature-dependent contributions (TΔS, ΔW, RT ln Q), illustrating how entropy and pressure effects progressively increase ΔG with temperature while the reaction remains exergonic across the range shown.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature [K] | ΔE [eV] | ΔE+ΔZPE [eV] | ΔG [eV] | TΔS [eV] | ΔW [eV] |\\n|---|---|---|---|---|---|\\n| 0 | ~ -0.9 | ~ -0.76 | ~ -0.76 | 0.0 | 0.0 |\\n| 200 | ~ -0.9 | ~ -0.76 | ~ -0.75 | ~ -0.05 | ~ -0.02 |\\n| 400 | ~ -0.9 | ~ -0.76 | ~ -0.68 | ~ -0.15 | ~ -0.06 |\\n| 600 | ~ -0.9 | ~ -0.76 | ~ -0.60 | ~ -0.25 | ~ -0.09 |\\n| 800 | ~ -0.9 | ~ -0.76 | ~ -0.52 | ~ -0.40 | ~ -0.11 |\\n| 1000 | ~ -0.9 | ~ -0.76 | ~ -0.44 | ~ -0.50 | ~ -0.13 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The entropy term, TΔS.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ΔE remains constant across the entire temperature range, reflecting its purely electronic nature. In contrast, TΔS becomes increasingly negative with temperature, contributing significantly to the upward shift in ΔG. This contrast highlights why entropy dominates the temperature dependence of reaction free energy.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ΔG remains negative throughout the plotted temperature range, indicating that the SE1 reaction is thermodynamically favorable under the conditions considered. Although the driving force decreases with temperature, the reaction does not become endergonic. This supports the feasibility of spontaneous etching at elevated temperatures.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":9,"width":438,"height":413}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":441,"height":423,"image_format":"jpeg","image_sha256":"19196ecdb540ed33a84b152021daddf91de4d291e62f1fcfdfb2d4c11ce0609e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_5.jpg","caption":"Figure 5. Free energy profiles for the SE1 (blue) and SL1 (orange) reactions of (a) $\\mathrm{HfO}_2$ and (b) $\\mathrm{ZrO}_2$ from 0 to $1000\\mathrm{K}$ at the pressures given in the text. $T_{1}$ is where the self-limiting and spontaneous etch reactions cross over for the 8O/16F model, and $T_{2}$ is where spontaneous etching is preferred.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_5","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_5","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Free-energy profiles for the SE1 (blue) and SL1 (orange) reactions of HfO₂ as functions of temperature. Below T₁ = 657 K, the self-limiting pathway is thermodynamically favored. Between T₁ and T₂ = 813 K, spontaneous etching becomes preferred. Above T₂, the self-limiting reaction is endergonic, and the system operates in a purely etching regime.\"},{\"panel_id\":\"b\",\"text\":\"Free-energy profiles for the SE1 and SL1 reactions of ZrO₂ showing analogous temperature-dependent behavior, with transitions at lower temperatures (T₁ = 534 K and T₂ = 770 K). Compared to HfO₂, ZrO₂ enters the preferred and purely etching regimes at lower temperatures, indicating reduced thermal stability of the self-limiting state.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature [K] | ΔG (SE1 - Blue) [eV] | ΔG (SL1 - Orange) [eV] | Condition |\\n|---|---|---|---|\\n| 0 | ~ -0.75 | ~ -3.0 | Start |\\n| 657 | ~ -0.6 | ~ -0.6 | T1 (Crossover) |\\n| 813 | ~ -0.55 | 0.0 | T2 (Zero crossing) |\\n| 1000 | ~ -0.45 | ~ +0.7 | End |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature [K] | ΔG (SE1 - Blue) [eV] | ΔG (SL1 - Orange) [eV] | Condition | \\n|---|---|---|---| \\n| 0 | ~ -1.0 | ~ -2.8 | Start | \\n| 534 | ~ -0.9 | ~ -0.9 | T1 (Crossover) | \\n| 770 | ~ -0.8 | 0.0 | T2 (Zero crossing) | \\n| 1000 | ~ -0.7 | ~ +0.8 | End |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Above 813 K, the free energy change (ΔG) for the self-limiting reaction becomes positive. This means the reaction becomes endergonic and is no longer thermodynamically spontaneous, indicating that a stable self-limiting layer cannot form under these conditions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The self-limiting reaction (SL1).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Temperatures below approximately 657 K are optimal, as the self-limiting reaction is thermodynamically favored while spontaneous etching is suppressed, allowing precise atomic layer removal.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Negative.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":438,"height":392},{"panel_id":"b","x":0,"y":407,"width":442,"height":389}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":444,"height":798,"image_format":"jpeg","image_sha256":"6657ae071b8f3d67ad2f7121e41a3b8bb102159851c509db579070ec16ad1403","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_6.jpg","caption":"Figure 6. Free energy profiles of the continuous etching and self-limiting reactions for $\\mathrm{HfO}_2$ . $T_{1}$ , $T_{2}$ , and $T_{3}$ are where the self-limiting and spontaneous etch reactions cross over for 16O/32F, 12O/24F, and 8O/16F models, respectively.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_6","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_6","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Line chart showing free-energy Delta G profiles for continuous etching and self-limiting reactions of HfO2 under three HF surface coverages (16 HF, 24 HF, and 32 HF) as functions of temperature. The figure identifies three crossover temperatures T1 = 429 K (16O/32F), T2 = 618 K (12O/24F), and T3 = 657K (8O/16F)—at which the self-limiting and spontaneous etch pathways become thermodynamically equivalent.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature [K] | Ref (Blue) [eV] | 32 HF (Yellow) [eV] | 24 HF (Gray) [eV] | 16 HF (Orange) [eV] | Note |\\n|---|---|---|---|---|---|\\n| 0 | ~ -0.8 | ~ -2.2 | ~ -2.8 | ~ -3.0 | Start |\\n| 429 | ~ -0.7 | ~ -0.7 | ~ -1.3 | ~ -1.5 | T1 (Crossover) |\\n| 618 | ~ -0.65 | 0.0 | ~ -0.6 | ~ -0.8 | T2 (Yellow Zero) |\\n| 657 | ~ -0.6 | ~ +0.2 | 0.0 | 0.0 | T3 (Gray/Orange Zero) |\\n| 1000 | ~ -0.5 | ~ +1.5 | ~ +0.8 | ~ +0.7 | End |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 32 HF surface model.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing HF coverage raises the free energy of the self-limiting pathway, causing it to intersect the continuous etching pathway at lower temperatures. This indicates that densely fluorinated surfaces destabilize the self-limiting configuration, narrowing the temperature window where controlled ALE can occur.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reference curve represents continuous etching, which is dominated by reaction energetics that vary weakly with surface coverage. In contrast, the self-limiting reactions depend strongly on surface fluorination, making their free energy more sensitive to temperature and coverage-dependent entropy contributions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 16 HF surface model is most suitable, as it maintains self-limiting behavior up to the highest temperature (T3 = 657K), offering a wider operational window before uncontrolled etching dominates.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":6,"width":439,"height":384}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":444,"height":392,"image_format":"jpeg","image_sha256":"4c22d1599c095a7b7888312679e84c87ecb1ef081c073260c5566ac3f64d93d5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_7.jpg","caption":"Figure 7. Free energy profiles of the continuous etching and self-limiting reactions for $\\mathrm{ZrO}_2$ . $T_{1}$ , $T_{2}$ , and $T_{3}$ are where the self-limiting and spontaneous etch reactions cross over for 16O/32F, 12O/24F, and 8O/16F models, respectively.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_7","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_7","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Line chart showing free-energy (ΔG) profiles for continuous etching and self-limiting reactions of ZrO2 for three HF surface models (16 HF, 24 HF, and 32 HF) as functions of temperature. The figure marks three crossover temperatures—T1 = 273 K, T2 = 502 K, and T3 = 534 K—corresponding to the 16O/32F, 12O/24F, and 8O/16F models, respectively, where self-limiting and spontaneous etch pathways become thermodynamically equivalent.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature [K] | Ref (Blue) [eV] | 32 HF (Yellow) [eV] | 24 HF (Gray) [eV] | 16 HF (Orange) [eV] | Note |\\n|---|---|---|---|---|---|\\n| 0 | ~ -1.0 | ~ -1.9 | ~ -2.7 | ~ -2.8 | Start |\\n| 273 | ~ -0.95 | ~ -0.95 | ~ -1.8 | ~ -1.9 | T1 (Crossover) |\\n| 502 | ~ -0.9 | 0.0 | ~ -1.0 | ~ -1.1 | T2 (Yellow Zero) |\\n| 534 | ~ -0.9 | ~ +0.2 | 0.0 | 0.0 | T3 (Gray/Orange Zero) |\\n| 1000 | ~ -0.7 | ~ +1.8 | ~ +0.9 | ~ +0.8 | End |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 32 HF surface model.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Higher HF surface coverage raises the free energy of the self-limiting pathway, causing it to intersect the continuous etching pathway at lower temperatures. This indicates that heavily fluorinated surfaces destabilize the self-limiting configuration more rapidly as temperature increases.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1) 32 HF (smallest range)\\n2) 24 HF\\n3) 16 HF (largest range)\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 16 HF surface model is most suitable, as it maintains a negative ΔG for self-limiting reactions up to the highest temperature (T3 = 534 K), providing the widest operational window merging stability with temperature tolerance.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":3,"width":401,"height":353}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":406,"height":358,"image_format":"jpeg","image_sha256":"01cbfd099c62b9657cf85c7bd0f25b2f38e18b8d4e11eb00211e883917afce90","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig12.jpg","caption":"FIG.12. G free energy profiles of CVE1, CVE2, and SL reactions vs temperature at a constant HF reactant pressure of $0.2$ Torr and a product pressure of $0.01$ Torr. SL reaction becomes endergonic at $110\\mathrm{K}$ .","id":"test/atomic-layer-etching/simulation-usecase/28/fig12","sample_id":"atomic-layer-etching/simulation-usecase/28/fig12","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Thermodynamic profile comparing the Gibbs free energy (ΔG) of three etching mechanisms (CVE1, CVE2, SL) versus temperature. CVE1 and CVE2 remain exergonic (ΔG < 0) across the entire temperature range. The SL reaction transitions from exergonic to endergonic at 110 K, becoming thermodynamically unfavorable at higher temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (K) | ΔG (eV) - SL(Green) | ΔG (eV) - CVE2 (Blue) | ΔG (eV)- CVE1 (Red) |\\n|-----------------|---------------------|------------------------|-------------------------|\\n| 0 | -0.5 | -1.0 | -1.3 |\\n| 110 | 0.0 | -1.1 | -1.5 |\\n| 200 | 0.5 | -1.1 | -1.6 |\\n| 400 | 1.8 | -1.1 | -1.7 |\\n| 600 | 3.0 | -1.1 | -1.8 |\\n| 800 | 4.2 | -1.2 | -1.9 |\\n| 1000 | 5.2 | -1.2 | -2.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Above 110 K, the two mechanisms diverge significantly. The SL reaction becomes endergonic (ΔG > 0), meaning it is thermodynamically unfavorable and unlikely to proceed spontaneously. In contrast, the CVE1 reaction remains strongly exergonic (ΔG becoming more negative), indicating it is the thermodynamically preferred and dominant etching pathway at higher temperatures.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"110 K\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"CVE1, CVE2, SL\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, it remains exergonic (ΔG < 0) throughout the entire range.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":662,"height":606}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":666,"height":609,"image_format":"jpeg","image_sha256":"63b26bbe6337354a2ddff1d5b8ac610dcaade4fadd6c0b1939b57806d9cf6278","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_12.jpg","caption":"Fig. 12. Graphical illustrations depicting the influence of various R2R controller algorithms on an environment that is introduced to a mild kinetic shift disturbance of 0.8 on the input parameters including the (a) HF flow rate, (b) TMA flow rate, (c) substrate velocity, which are computed from the output variable, (d) etching per cycle (EPC).","id":"test/atomic-layer-etching/simulation-usecase/34/fig_12","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_12","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart shows HF flow rate control over batch number. The EWMA and ANN predictions initially deviate slightly from the target but converge toward it as batches progress.\"},{\"panel_id\":\"b\",\"text\":\"The multiple line chart shows TMA flow rate adjustment across batches. Early deviations are reduced over time, with ANN tracking the target more closely than the EWMA curves.\"},{\"panel_id\":\"c\",\"text\":\"The multiple line chart shows substrate velocity over batch number. Initial oscillations decrease with batch number, and all methods converge toward the target velocity.\"},{\"panel_id\":\"d\",\"text\":\"The multiple line chart shows EPC over batch number. Both EWMA and ANN predictions converge toward the target EPC, with ANN exhibiting faster stabilization.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Batch number | Target | EWMA (λ=0.7) | EWMA (λ=0.3) | ANN |\\n|--------------|--------|--------------|--------------|-------|\\n| 1 | ~20 | ~20.2 | ~19.8 | ~20.1 |\\n| 10 | ~20 | ~20.1 | ~19.9 | ~20.0 |\\n| 20 | ~20 | ~20.0 | ~20.0 | ~20.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Batch number | Target | EWMA (λ=0.7) | EWMA (λ=0.3) | ANN |\\n|--------------|--------|--------------|--------------|-------|\\n| 1 | ~45 | ~47 | ~43 | ~45 |\\n| 10 | ~45 | ~46 | ~44 | ~45 |\\n| 20 | ~45 | ~45 | ~45 | ~45 |\"},{\"panel_id\":\"c\",\"text\":\"| Batch number | Target | EWMA (λ=0.7) | EWMA (λ=0.3) | ANN |\\n|--------------|--------|--------------|--------------|-------|\\n| 1 | ~70 | ~75 | ~65 | ~70 |\\n| 10 | ~70 | ~72 | ~68 | ~70 |\\n| 20 | ~70 | ~70 | ~70 | ~70 |\"},{\"panel_id\":\"d\",\"text\":\"| Batch number | Target | EWMA (λ=0.7) | EWMA (λ=0.3) | ANN |\\n|--------------|--------|--------------|--------------|-------|\\n| 1 | ~0.04 | ~0.06 | ~0.03 | ~0.04 |\\n| 10 | ~0.04 | ~0.05 | ~0.04 | ~0.04 |\\n| 20 | ~0.04 | ~0.04 | ~0.04 | ~0.04 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both methods show larger deviations from the target. At early batches methods progressively converge as batch number increases. The ANN curves generally stabilize faster and exhibit smaller oscillations compared to the EWMA curves.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"HF flow rate, TMA flow rate, Substrate velocity, Etching per cycle (EPC\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Batch number.\"}]}]","bbox":[{"panel_id":"a","x":185,"y":0,"width":650,"height":40},{"panel_id":"b","x":514,"y":55,"width":497,"height":380},{"panel_id":"c","x":9,"y":457,"width":497,"height":384},{"panel_id":"d","x":516,"y":462,"width":495,"height":379}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1011,"height":841,"image_format":"jpeg","image_sha256":"a49a4d8333313c0029c0c343945861c33aa58ae743486a5394094766f7404b88","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_13.jpg","caption":"Fig. 13. Graphical illustrations depicting the influence of various R2R controller algorithms on an environment that is introduced to a severe kinetic shift disturbance of 0.6 on the input parameters including the (a) HF flow rate, (b) TMA flow rate, and (c) substrate velocity, which are computed from the output variable (d) etching per cycle (EPC).","id":"test/atomic-layer-etching/simulation-usecase/34/fig_13","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_13","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart shows HF flow rate control over batch number. EWMA initially deviates from the target, while ANN tracks the target more closely and stabilizes faster.\"},{\"panel_id\":\"b\",\"text\":\"The multiple line chart shows TMA flow rate over batch number. Early fluctuations decrease with batch number, and the ANN method maintains values closest to the target.\"},{\"panel_id\":\"c\",\"text\":\"The multiple line chart shows substrate velocity over batch number. Initial oscillations are damped over time, with ANN converging to the target more quickly than EWMA.\"},{\"panel_id\":\"d\",\"text\":\"The multiple line chart shows EPC over batch number. All methods converge toward the target EPC, with ANN exhibiting the smallest deviation during stabilization.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Batch number | Target | EWMA (λ=0.7) | EWMA (λ=0.3) | ANN |\\n|--------------|--------|--------------|--------------|-------|\\n| 1 | ~20 | ~21.0 | ~20.5 | ~20.0 |\\n| 10 | ~20 | ~20.3 | ~20.1 | ~20.0 |\\n| 20 | ~20 | ~20.0 | ~20.0 | ~20.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Batch number | Target | EWMA (λ=0.7) | EWMA (λ=0.3) | ANN |\\n|--------------|--------|--------------|--------------|-------|\\n| 1 | ~45 | ~47 | ~44 | ~45 |\\n| 10 | ~45 | ~46 | ~44.5 | ~45 |\\n| 20 | ~45 | ~45 | ~45 | ~45 |\"},{\"panel_id\":\"c\",\"text\":\"| Batch number | Target | EWMA (λ=0.7) | EWMA (λ=0.3) | ANN |\\n|--------------|--------|--------------|--------------|-------|\\n| 1 | ~70 | ~75 | ~65 | ~70 |\\n| 10 | ~70 | ~72 | ~68 | ~70 |\\n| 20 | ~70 | ~70 | ~70 | ~70 |\"},{\"panel_id\":\"d\",\"text\":\"| Batch number | Target | EWMA (λ=0.7) | EWMA (λ=0.3) | ANN |\\n|--------------|--------|--------------|--------------|-------|\\n| 1 | ~0.35 | ~0.38 | ~0.33 | ~0.35 |\\n| 10 | ~0.35 | ~0.36 | ~0.34 | ~0.35 |\\n| 20 | ~0.35 | ~0.35 | ~0.35 | ~0.35 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both methods reduce deviations over batch number, but ANN consistently tracks the target more closely and stabilizes faster than EWMA, which shows larger initial oscillations.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Batch Number.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"HF flow rate, TMA flow rate, Substrate velocity, Etching per cycle\"}]}]","bbox":[{"panel_id":"a","x":190,"y":0,"width":648,"height":39},{"panel_id":"b","x":518,"y":54,"width":502,"height":380},{"panel_id":"c","x":10,"y":457,"width":499,"height":385},{"panel_id":"d","x":519,"y":461,"width":501,"height":381}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_13.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1020,"height":842,"image_format":"jpeg","image_sha256":"54221088f5425cb59ddcf8de94ecf56065b92d41f3dea8655b745059b70e90bf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_15.jpg","caption":"Fig. 15. Graphical illustrations depicting the influence of various R2R controller algorithms on an environment that is introduced to a kinetic drift disturbance on the input parameters including the (a) HF flow rate, (b) TMA flow rate, and (c) substrate velocity, which are computed from the output variable (d) etching per cycle (EPC).","id":"test/atomic-layer-etching/simulation-usecase/34/fig_15","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_15","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart shows HF flow rate control over batch number. Without control, the flow rate drifts upward, while EWMA partially corrects the drift and ANN maintains the flow rate close to the target.\"},{\"panel_id\":\"b\",\"text\":\"The multiple line chart shows TMA flow rate over batch number. The no-control case increases steadily, whereas the ANN tracks the target closely and EWMA reduces but does not eliminate the drift.\"},{\"panel_id\":\"c\",\"text\":\"The multiple line chart shows substrate velocity over batch number. Velocity decreases significantly without control, while EWMA mitigates the drop and ANN maintains values near the target.\"},{\"panel_id\":\"d\",\"text\":\"The multiple line chart shows EPC over batch number. EPC declines strongly in the no-control case, while both EWMA and ANN stabilize EPC near the target, with ANN showing the smallest deviation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Batch number | Target | EWMA | ANN | No control |\\n|--------------|--------|------|------|------------|\\n| 1 | ~20 | ~21 | ~20 | ~22 |\\n| 10 | ~20 | ~22 | ~20 | ~24 |\\n| 20 | ~20 | ~23 | ~20 | ~25 |\"},{\"panel_id\":\"b\",\"text\":\"| Batch number | Target | EWMA | ANN | No control |\\n|--------------|--------|------|------|------------|\\n| 1 | ~45 | ~46 | ~45 | ~48 |\\n| 10 | ~45 | ~47 | ~45 | ~50 |\\n| 20 | ~45 | ~48 | ~45 | ~52 |\"},{\"panel_id\":\"c\",\"text\":\"| Batch number | Target | EWMA | ANN | No control |\\n|--------------|--------|------|------|------------|\\n| 1 | ~70 | ~72 | ~70 | ~75 |\\n| 10 | ~70 | ~68 | ~70 | ~65 |\\n| 20 | ~70 | ~65 | ~70 | ~55 |\"},{\"panel_id\":\"d\",\"text\":\"| Batch number | Target | EWMA | ANN | No control |\\n|--------------|--------|------|------|------------|\\n| 1 | ~0.35 | ~0.36| ~0.35| ~0.34 |\\n| 10 | ~0.35 | ~0.33| ~0.35| ~0.28 |\\n| 20 | ~0.35 | ~0.32| ~0.35| ~0.20 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In all panels, the no-control case shows significant drift away from the target over batch number. EWMA reduces the drift but still deviates over time. The ANN consistently maintains the variables closest to their target values.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Batch number.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"HF flow rate, TMA flow rate, Substrate velocity, Etching per cycle (EPC)\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":88,"y":0,"width":847,"height":39},{"panel_id":"b","x":516,"y":54,"width":495,"height":379},{"panel_id":"c","x":9,"y":456,"width":498,"height":383},{"panel_id":"d","x":516,"y":460,"width":495,"height":379}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_15.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1011,"height":839,"image_format":"jpeg","image_sha256":"1ffcd13765d1dcfa5fe4f3dc9e3401a76450bcc7875873d329ce424c6ba1a6d6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_7_fig_4.jpg","caption":"FIG. 4. Free energy profiles of the overall etch reactions given in Table I. Solid lines correspond to the etch of an adatom and dotted lines correspond to the etch of a surface atom.","id":"test/atomic-layer-etching/simulation-usecase/7/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/7/fig_4","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a line chart that plots the Gibbs free energy change (ΔG) per cobalt atom as a function of temperature (T) for eight surface reactions involving different precursors: propene, butyne, silane, and trimethylsilane (TMS). Each precursor is represented under two surface states, adsorbed (-a) and saturated (-s). The chart reveals that ΔG increases linearly with temperature for all cases, with the magnitude of change varying among the precursors. Propene and TMS show the most favorable ΔG values (more negative) across the full temperature range, while butyne shows the least favorable thermodynamics. The comparison between adsorbed and saturated cases demonstrates consistent trends across species.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| T [K] | Propene-a | Butyne-a | Silane-a | TMS-a | Propene-s | Butyne-s | Silane-s | TMS-s |\\n|---|---|---|---|---|---|---|---|---|\\n| 0 | -9.5 | -2.5 | -6.5 | -8.5 | -9.5 | -2.5 | -6.5 | -8.5 |\\n| 250 | -7.5 | -1.5 | -4.5 | -6.5 | -7.5 | -1.5 | -4.5 | -6.5 |\\n| 500 | -5.5 | -0.5 | -2.5 | -4.5 | -5.5 | -0.5 | -2.5 | -4.5 |\\n| 750 | -3.5 | 0.5 | -0.5 | -2.5 | -3.5 | 0.5 | -0.5 | -2.5 |\\n| 1000 | -1.5 | 1.5 | 1.5 | 0.5 | -1.5 | 1.5 | 1.5 | 0.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ΔG values for both propene and butyne increase with temperature, indicating that the thermodynamic favorability of surface binding or reaction decreases at higher temperatures. Propene shows significantly more negative ΔG values than butyne across the entire temperature range, suggesting it is more thermodynamically favorable for surface reactions. The difference between the adsorbed (a) and saturated (s) states for both molecules is minimal, implying that the surface termination state has a limited effect on the general thermodynamic trend. This suggests that propene may be a more suitable candidate for temperature-sensitive surface chemistry applications like selective etching or deposition.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"a -2.5 eV/Co\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Propene-a, Propene-s, TMS-a, TMS-s\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":653,"height":605}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/In silico design of a thermal atomic layer etch process of cobalt.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":653,"height":605,"image_format":"jpeg","image_sha256":"d1f971c226560860424bb46b213f29d205db5f0dec0d2cb78d582e2ca5c976d6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_7_fig_6.jpg","caption":"FIG. 6. (a) Free energy profiles of the individual reaction steps for the ALE process with H desorption after propene adsorption (in dotted lines) or no desorption of H after propene adsorption (in solid lines) given in Fig. 5. (b) The pressure-temperature process window of the complete ALE cycle (H desorbed) computed by considering different $\\ln (Q)$ values for each temperature. The red line indicated the CO decomposition temperature on the Co surface. The region marked by the black rectangle gives the Co ALE process window when propene and CO are used as reactants.","id":"test/atomic-layer-etching/simulation-usecase/7/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/7/fig_6","subset":"multiple-line-chart","split":"test","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"contour heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure (a) presents a multi-line chart showing the Gibbs free energy (ΔG) as a function of temperature for different surface reaction steps involved in propene chemistry on cobalt. These steps include propene adsorption, its dissociation, and byproduct formation such as H₂ and CO₂. The slope and relative positioning of the lines indicate which reactions become more or less thermodynamically favorable with increasing temperature.\"},{\"panel_id\":\"b\",\"text\":\"Figure (b) is a heatmap that maps the equilibrium constant (lnQ) over a temperature-pressure space. The diagram includes a shaded process window indicating practical temperature and pressure ranges where the targeted surface reactions may be viable, providing a framework for selecting operating conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature [K] | ΔG [eV / Co] |\\n|---|---|\\n| 0 | -6 |\\n| 200 | -5 |\\n| 400 | -4 |\\n| 600 | -3 |\\n| 800 | -2 |\\n| 1000 | -1 |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature [K] | Equilibrium constant: lnQ |\\n|---|---|\\n| 0 | -75 |\\n| 200 | -50 |\\n| 400 | -25 |\\n| 600 | 0 |\\n| 800 | 25 |\\n| 1000 | 50 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ΔG trends in figure (a) show which reaction steps become more or less favorable as temperature increases. For instance, propene adsorption has a negative ΔG at low temperatures, indicating thermodynamic favourability, while certain desorption reactions (e.g., CO₂ release) become favorable only at higher temperatures. Figure (b) complements this by showing the process window where lnQ indicates strong driving forces for reactions (lnQ ≪ 0) or equilibrium conditions (lnQ ≈ 0). By aligning these trends, one can identify temperature-pressure zones where specific reaction pathways are both thermodynamically favorable and kinetically accessible. This approach enables the rational design of conditions that favor desired surface terminations or product release while suppressing unwanted side reactions\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 750 K.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Propene adsorption, dissociative H₂ adsorption, CO₂ adsorption, surface reaction of volatiles.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":36,"width":602,"height":580},{"panel_id":"b","x":640,"y":17,"width":602,"height":582}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/In silico design of a thermal atomic layer etch process of cobalt.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1356,"height":620,"image_format":"jpeg","image_sha256":"de52a3b4c8c82f64e86a3a1d1df5ed72daad26c85f904e0f8db546f2cd79baab","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/multiple-line-chart/train/metadata.jsonl b/subsets/multiple-line-chart/train/metadata.jsonl index 9d3ffc16c0efe72f0bd9a3bad237d3611dceb344..99b9048b0d3cab04a671b647213e8c4da8da4e50 100644 --- a/subsets/multiple-line-chart/train/metadata.jsonl +++ b/subsets/multiple-line-chart/train/metadata.jsonl @@ -1,135 +1,135 @@ -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_16_fig_2.jpg","caption":"FiG. 2. (a) Thermogravimetric analysis and (b) vapor pressures of the $\\mathrm{Zr}$ precursors.","id":"train/atomic-layer-deposition/experimental-usecase/16/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/16/fig_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/Sanni Seppala et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":653,"height":1042,"image_format":"jpeg","image_sha256":"725b05417e27a28556e0e2bbb46cdd81a89ffaaf32e574799917f65d3251a011","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":40,"y":6,"width":611,"height":516},{"panel_id":"b","x":52,"y":550,"width":595,"height":489}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the thermogravimetric analysis curves (weight loss percentage as a function of temperature) for the Zr precursors. Zr(Cp)(ᵗBuDAD)(OⁱPr) evaporates with minimal residue, two other precursors show decomposition.\"},{\"panel_id\":\"b\",\"text\":\"The chart illustrates the vapor pressure of Zr complexes (Zr(Cp)(ᵗBuDAD)(OⁱPr),Zr(MeCp)(TMEA), Zr(Me₅Cp)(TEA)) at different temperatures. Zr(Cp)(ᵗBuDAD)(OⁱPr) achieves highest vapor pressures at low temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Weight loss (%) | Reagent + Conditions |\\n|---|---|---|\\n| 6 | 100.8 | Zr(Me_5Cp)(TEA) (vac) |\\n| 98 | 100.8 | Zr(Me_5Cp)(TEA) (vac) |\\n| 189 | 82.9 | Zr(Me_5Cp)(TEA) (vac) |\\n| 231 | 15.3 | Zr(Me_5Cp)(TEA) (vac) |\\n| 299 | 13.0 | Zr(Me_5Cp)(TEA) (vac) |\\n| 406 | 7.6 | Zr(Me_5Cp)(TEA) (vac) |\\n| 498 | 6.8 | Zr(Me_5Cp)(TEA) (vac) |\\n| 6 | 100.8 | Zr(Me_5Cp)(TEA) (atm) |\\n| 98 | 100.8 | Zr(Me_5Cp)(TEA) (atm) |\\n| 205 | 92.6 | Zr(Me_5Cp)(TEA) (atm) |\\n| 270 | 68.9 | Zr(Me_5Cp)(TEA) (atm) |\\n| 347 | 63.1 | Zr(Me_5Cp)(TEA) (atm) |\\n| 423 | 34.8 | Zr(Me_5Cp)(TEA) (atm) |\\n| 497 | 29.3 | Zr(Me_5Cp)(TEA) (atm) |\\n| 6 | 100.8 | Zr(MeCp)(TMEA) (atm) |\\n| 98 | 100.8 | Zr(MeCp)(TMEA) (atm) |\\n| 202 | 98.4 | Zr(MeCp)(TMEA) (atm) |\\n| 285 | 68.5 | Zr(MeCp)(TMEA) (atm) |\\n| 317 | 14.6 | Zr(MeCp)(TMEA) (atm) |\\n| 418 | 11.8 | Zr(MeCp)(TMEA) (atm) |\\n| 498 | 11.5 | Zr(MeCp)(TMEA) (atm) |\\n| 6 | 100.8 | Zr(Cp)(tBuDAD)(O^iPr) (atm) |\\n| 98 | 100.8 | Zr(Cp)(tBuDAD)(O^iPr) (atm) |\\n| 183 | 94.6 | Zr(Cp)(tBuDAD)(O^iPr) (atm) |\\n| 234 | 56.5 | Zr(Cp)(tBuDAD)(O^iPr) (atm) |\\n| 263 | 2.9 | Zr(Cp)(tBuDAD)(O^iPr) (atm) |\\n| 409 | 2.1 | Zr(Cp)(tBuDAD)(O^iPr) (atm) |\\n| 498 | 1.4 | Zr(Cp)(tBuDAD)(O^iPr) (atm) |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | Vapor pressure (Torr) | Reagent |\\n|---|---|---|\\n| 100 | 0.6 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 109 | 0.8 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 119 | 1.2 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 129 | 1.5 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 139 | 2.0 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 128 | 0.2 | Zr(Me_5Cp)(TEA) |\\n| 138 | 0.3 | Zr(Me_5Cp)(TEA) |\\n| 149 | 0.5 | Zr(Me_5Cp)(TEA) |\\n| 159 | 0.7 | Zr(Me_5Cp)(TEA) |\\n| 168 | 0.7 | Zr(Me_5Cp)(TEA) |\\n| 178 | 0.8 | Zr(Me_5Cp)(TEA) |\\n| 188 | 1.4 | Zr(Me_5Cp)(TEA) |\\n| 127 | 0.2 | Zr(MeCp)(TMEA) |\\n| 137 | 0.2 | Zr(MeCp)(TMEA) |\\n| 147 | 0.3 | Zr(MeCp)(TMEA) |\\n| 157 | 0.5 | Zr(MeCp)(TMEA) |\\n| 167 | 0.7 | Zr(MeCp)(TMEA) |\\n| 178 | 1.6 | Zr(MeCp)(TMEA) |\\n| 188 | 2.5 | Zr(MeCp)(TMEA) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Zr(Cp)(ᵗBuDAD)(OⁱPr)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Applying vacuum conditions significantly reduces decomposition compared to atmospheric pressure. The thermogravimetric analysis shows a residue of ~30% at the highest temperature studied. Under vacuum, the residue is ~ 6%. The reduction in residue is a sign of reduced thermal decomposition.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Zr(Me₅Cp)(TEA) under vacuum.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Zr(Cp)(ᵗBuDAD)(OⁱPr) achieves highest vapor pressures at lower temperatures.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_16_fig_3.jpg","caption":"FiG. 3. (a) Film growth rates at different temperatures with (a) water and (b) ozone as the oxygen source. Pulse times for $\\mathrm{Zr}$ precursors, $\\mathrm{H}_2\\mathrm{O}$ and $\\mathrm{O_3}$ were $1.0\\mathrm{s}$ and purge times for all pulses $1.5\\mathrm{s}$","id":"train/atomic-layer-deposition/experimental-usecase/16/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/16/fig_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/Sanni Seppala et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":653,"height":1144,"image_format":"jpeg","image_sha256":"7de551f5f77bff541302420c28602edd4f41881421dc6a50aa2d34b585565cd5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":42,"y":17,"width":607,"height":553},{"panel_id":"b","x":47,"y":594,"width":602,"height":543}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the growth rates against temperatures for Zr precursors when using water as the oxygen source. The growth rate of films with Zr(Cp)(tBuDAD)(O^Pr), Zr(MeCp)(TMEA), and Zr(Me_5Cp)(TEA) compounds increases with temperature, with Zr(Cp)(tBuDAD)(O^Pr) showing the highest growth rate.\"},{\"panel_id\":\"b\",\"text\":\"The chart shows the growth rates against temperatures for Zr precursors when using ozone as the oxygen source. The growth rate of a film with Zr(MeCp)(TMEA) as precursor sligthtly decreases with temperatures. The growth rate with Zr(Cp)(tBuDAD)(O^Pr) and Zr(Me_5Cp)(TEA) compounds increases with temperature, with Zr(Cp)(tBuDAD)(O^Pr) it is showing the highest growth rate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Growth rate (Å/cycle) | Reagent | \\n|---|---|---|\\n| 198 | 0,22 | Zr(MeCp)(TMEA) |\\n| 252 | 0,26 | Zr(MeCp)(TMEA) |\\n| 300 | 0,25 | Zr(MeCp)(TMEA) |\\n| 348 | 0,27 | Zr(MeCp)(TMEA) |\\n| 373 | 0,32 | Zr(MeCp)(TMEA) |\\n| 398 | 0,09 | Zr(Me_5Cp)(TEA) |\\n| 424 | 0,20 | Zr(Me_5Cp)(TEA) |\\n| 250 | 0,17 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 300 | 0,43 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 324 | 0,62 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 350 | 0,59 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 375 | 0,63 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 398 | 0,68 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 425 | 0,94 | Zr(Cp)(tBuDAD)(O^iPr) |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | Growth rate (Å/cycle) | Reagent | \\n|---|---|---|\\n| 250 | 0,09 | Zr(Me_5Cp)(TEA) |\\n| 275 | 0,19 | Zr(Me_5Cp)(TEA) |\\n| 300 | 0,29 | Zr(Me_5Cp)(TEA) |\\n| 350 | 0,38 | Zr(Me_5Cp)(TEA) |\\n| 374 | 0,36 | Zr(Me_5Cp)(TEA) |\\n| 400 | 0,38 | Zr(Me_5Cp)(TEA) |\\n| 426 | 0,39 | Zr(Me_5Cp)(TEA) |\\n| 252 | 0,39 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 300 | 0,66 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 377 | 1,28 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 198 | 0,64 | Zr(MeCp)(TMEA) |\\n| 250 | 0,57 | Zr(MeCp)(TMEA) |\\n| 300 | 0,57 | Zr(MeCp)(TMEA) |\\n| 352 | 0,52 | Zr(MeCp)(TMEA) |\\n| 375 | 0,52 | Zr(MeCp)(TMEA) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Zr(Me₅Cp)(TEA) displays the lowest growth rates among 3 precursors. It features bulky ligands that sterically shield the central zirconium atom, preventing efficient access for reactants and resulting in significantly slower growth rates. Additionally, the TEA ligand coordinates through three oxygen atoms to form chelating bonds that are stronger than the nitrogen-based bonds in the other complexes, which reduces reactivity toward weak oxidants like water.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Zr(Me₅Cp)(TEA) (did not react to water below 400 °C).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Zr(MeCp)(TMEA) at approx. 250-350 °C.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Zr(MeCp)(TMEA), Zr(Me₅Cp)(TEA).\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_16_fig_4.jpg","caption":"FIG. 4. Film densities at different deposition temperatures with (a) water and (b) ozone as the oxygen source.","id":"train/atomic-layer-deposition/experimental-usecase/16/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/16/fig_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/Sanni Seppala et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":650,"height":1114,"image_format":"jpeg","image_sha256":"07f6745093c357182f7bf461c439a466cb80f83e050f4f9f706ef0d51d34a70b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":46,"y":17,"width":600,"height":533},{"panel_id":"b","x":54,"y":585,"width":591,"height":531}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the density of films deposited with water and Zr(Cp)(ᵗBuDAD)(OⁱPr), Zr(MeCp)(TMEA), or Zr(Me₅Cp)(TEA) as a function of temperature.\"},{\"panel_id\":\"b\",\"text\":\"The chart shows the density of films deposited with ozone and Zr(Cp)(ᵗBuDAD)(OⁱPr), Zr(MeCp)(TMEA), or Zr(Me₅Cp)(TEA) as a function of temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Density (g/cm³) | Precursor |\\n|---|---|---|\\n| 398 | 4.7 | Zr (Me_5Cp) (TEA) |\\n| 423 | 4.7 | Zr (Me_5Cp) (TEA) |\\n| 200 | 3.8 | Zr (MeCp) (TMEA) |\\n| 249 | 4.4 | Zr (MeCp) (TMEA) |\\n| 300 | 5.2 | Zr (MeCp) (TMEA) |\\n| 325 | 5.6 | Zr (MeCp) (TMEA) |\\n| 347 | 5.8 | Zr (MeCp) (TMEA) |\\n| 375 | 5.8 | Zr (MeCp) (TMEA) |\\n| 248 | 4.7 | Zr (Cp) (tBuDAD) (O^iPr) |\\n| 299 | 5.1 | Zr (Cp) (tBuDAD) (O^iPr) |\\n| 324 | 5.1 | Zr (Cp) (tBuDAD) (O^iPr) |\\n| 347 | 5.2 | Zr (Cp) (tBuDAD) (O^iPr) |\\n| 374 | 5.7 | Zr (Cp) (tBuDAD) (O^iPr) |\\n| 397 | 5.7 | Zr (Cp) (tBuDAD) (O^iPr) |\\n| 424 | 5.8 | Zr (Cp) (tBuDAD) (O^iPr) |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | Density (g/cm³) | Precursor |\\n|---|---|---|\\n| 249 | 5,4 | Zr(Me_5Cp)(TEA) |\\n| 275 | 5,6 | Zr(Me_5Cp)(TEA) |\\n| 301 | 5,8 | Zr(Me_5Cp)(TEA) |\\n| 350 | 5,9 | Zr(Me_5Cp)(TEA) |\\n| 375 | 5,9 | Zr(Me_5Cp)(TEA) |\\n| 399 | 5,9 | Zr(Me_5Cp)(TEA) |\\n| 426 | 5,9 | Zr(Me_5Cp)(TEA) |\\n| 201 | 3,8 | Zr(MeCp)(TMEA) |\\n| 250 | 4,5 | Zr(MeCp)(TMEA) |\\n| 302 | 5,6 | Zr(MeCp)(TMEA) |\\n| 350 | 5,9 | Zr(MeCp)(TMEA) |\\n| 375 | 5,9 | Zr(MeCp)(TMEA) |\\n| 375 | 5,9 | Zr(MeCp)(TMEA) |\\n| 250 | 5,1 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 298 | 5,7 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 375 | 5,9 | Zr(Cp)(tBuDAD)(O^iPr) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Zr(MeCp)(TMEA) (due to higher density).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"300°C would lead to the higher amount of deposited material. Although the growth rates are equal, the film density increased from ~4.5 g/cm3 to ~5.5 g/cm3, as the temperature rises from 250°C to 300°C. The increase in density means that more atoms are packed into the film at the higher temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After ~350 °C at ~ 5.8 g/cm3.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~350 °C and above.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_16_fig_9.jpg","caption":"FIG. 9. Leakage current density curves of the $\\mathrm{ZrO_2}$ films deposited with $\\mathrm{O_3}$ at $300^{\\circ}\\mathrm{C}$ . The polarity of the electric field indicates the potential applied to the top electrode.","id":"train/atomic-layer-deposition/experimental-usecase/16/fig_9","sample_id":"atomic-layer-deposition/experimental-usecase/16/fig_9","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/Sanni Seppala et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":648,"height":500,"image_format":"jpeg","image_sha256":"49bd449f26ba57082aa457905da2331b6b06c2da0a6d6ffce4143d0976ca59e9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":7,"width":645,"height":493}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the leakage current density versus electric field for films deposited at 300°C using ozone and 3 different Zr precursors (Zr(Cp)(ᵗBuDAD)(OⁱPr), Zr(MeCp)(TMEA) and Zr(Me₅Cp)(TEA))\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Electric field (MV/cm) | Current density (A/cm²) | Reagent |\\n|---|---|---|\\n| -2,5 | 0,000034413049869757 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| -2,4 | 0,000043492871235381 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| -2,3 | 0,000021544346900319 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| -2,3 | 0,000029439237258586 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| -2,3 | 0,000017957144943716 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| -2,2 | 0,000022695105366947 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| -2,2 | 0,000013141473626118 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,0 | 0,000000030610872343 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,1 | 0,000000033095885951 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,1 | 0,000000016394163633 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,2 | 0,000000026186598892 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,3 | 0,000000004581597669 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,4 | 0,000000012971623961 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,4 | 0,000000001153843460 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,4 | 0,000000006768750009 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,5 | 0,000000015163203393 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,6 | 0,000000005355666918 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,6 | 0,000000017269832907 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,7 | 0,000000001384340542 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,8 | 0,000000015562895291 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,8 | 0,000000001660882783 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,9 | 0,000000001916398735 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,9 | 0,000000010534134765 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 1,0 | 0,000000026876860122 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 1,1 | 0,000000008120906678 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 1,1 | 0,000000021265892581 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 1,3 | 0,000000029058743813 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 1,4 | 0,000000044062364278 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 1,5 | 0,000000060208944933 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 1,7 | 0,000000086666869037 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 2,5 | 0,000097431763878509 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| -1,8 | 0,000014582829828531 | Zr(Me_5Cp)(TEA) |\\n| -0,8 | 0,000000068573796153 | Zr(Me_5Cp)(TEA) |\\n| -0,6 | 0,000000134878740803 | Zr(Me_5Cp)(TEA) |\\n| -0,5 | 0,000000005355666918 | Zr(Me_5Cp)(TEA) |\\n| -0,2 | 0,000000007414066842 | Zr(Me_5Cp)(TEA) |\\n| -0,1 | 0,000000000901160733 | Zr(Me_5Cp)(TEA) |\\n| 0,0 | 0,000000048895122296 | Zr(Me_5Cp)(TEA) |\\n| 0,1 | 0,000000000501839650 | Zr(Me_5Cp)(TEA) |\\n| 0,4 | 0,000000037693909754 | Zr(Me_5Cp)(TEA) |\\n| 0,5 | 0,000000004581597669 | Zr(Me_5Cp)(TEA) |\\n| 0,6 | 0,000000031417754461 | Zr(Me_5Cp)(TEA) |\\n| 0,6 | 0,000000008554672536 | Zr(Me_5Cp)(TEA) |\\n| 0,8 | 0,000000084441059201 | Zr(Me_5Cp)(TEA) |\\n| 0,9 | 0,000000010000000000 | Zr(Me_5Cp)(TEA) |\\n| 1,2 | 0,000000040753929659 | Zr(Me_5Cp)(TEA) |\\n| 1,3 | 0,000000012638482029 | Zr(Me_5Cp)(TEA) |\\n| 1,4 | 0,000000066812659151 | Zr(Me_5Cp)(TEA) |\\n| 1,5 | 0,000000004463931423 | Zr(Me_5Cp)(TEA) |\\n| 1,9 | 0,000097431763878509 | Zr(Me_5Cp)(TEA) |\\n| -1,4 | 0,000001772505414982 | Zr(MeCp)(TMEA) |\\n| -1,0 | 0,000000248588037617 | Zr(MeCp)(TMEA) |\\n| -0,4 | 0,000000007414066842 | Zr(MeCp)(TMEA) |\\n| -0,1 | 0,000000001916398735 | Zr(MeCp)(TMEA) |\\n| 0,0 | 0,000000041828175983 | Zr(MeCp)(TMEA) |\\n| 0,1 | 0,000000000397072725 | Zr(MeCp)(TMEA) |\\n| 1,3 | 0,000002182644728397 | Zr(MeCp)(TMEA) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Zr(MeCp)(TMEA)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, it is different. The graph shows that when the electric field is negative, the leakage current is low and similar to the other compounds. When electric field is positive, the leakage current spikes compared to other precursors.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The curve shoots vertically upward at approx. 1.5 - 1.7 MV/cm.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_25_figure_10.jpg","caption":"Figure 10. $JV$ sweeps for the best solar cells using the same RBF PDT ACIGS absorber and either TGO 0.077, ZGO 0.32, ZTO 0.2, or CdS as the ESL. Scans of solar cells using a pretreatment of either one cycle of ALD $\\mathrm{Al}_2\\mathrm{O}_3$ $\\mathrm{(TMA + H_2O)}$ or three cycles of ALD ZnS (DEZ $+\\mathrm{H}_2\\mathrm{S})$ prior to the deposition of TGO 0.077 are also shown.","id":"train/atomic-layer-deposition/experimental-usecase/25/figure_10","sample_id":"atomic-layer-deposition/experimental-usecase/25/figure_10","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/Adam Hultqvist et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":502,"height":350,"image_format":"jpeg","image_sha256":"4e515f157adc0fd344305ab5834ce31130826a60f25caac3c8c1674bf15c53a3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":500,"height":346}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The PV characteristics is illustrated in the chart where the current density (in mA/cm²) is plotted as a function of bias voltage (in V) for various materials, including TGO 0.077, TGO 0.077 TMA, TGO 0.077 ZnS, ZGO 0.32, ZTO 0.20, and CdS.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Bias (V) | TGO 0.077 | TGO 0.077 TMA | TGO 0.077 ZnS | ZGO 0.32 | ZTO 0.20 | CdS |\\n|----------|-----------|---------------|---------------|----------|----------|-----|\\n| -0.5 | -35 | -35 | -35 | -35 | -35 | -35 |\\n| 0.0 | 0 | 0 | 0 | 0 | 0 | 0 |\\n| 0.3 | 0 | 0 | 0 | 0 | 0 | 0 |\\n| 0.5 | 10 | 12 | 8 | 6 | 5 | 4 |\\n| 0.6 | 20 | 22 | 18 | 15 | 12 | 10 |\\n| 0.7 | 30 | 32 | 28 | 25 | 22 | 18 |\\n| 0.8 | 38 | 40 | 36 | 32 | 30 | 25 |\\n| 0.9 | 40 | 42 | 40 | 36 | 34 | 28 |\\n| 1.0 | 40 | 42 | 40 | 36 | 34 | 28 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ZGO 0.32 with a Voc of 704 ± 8 mV. The solar cells with ZGO 0.32 ESLs had almost the same Voc as those with ZTO 0.2 but, on average, worse FF.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TGO 0.077 ESL clearly gave lower Voc and FF compared to the ZnO or Cd-containing alternatives, just like in a previous study on TGAO ESL.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Aside from the blue losses in EQE for the devices with 2.4 eV Eg CdS, all of the solar cells showed good collection with some variation in the interference peak positions due to the difference in their ZnO:Al/ZnO/ESL stack thicknesses\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"One thing that clearly distinguishes the TGO process from the more successful ALD ESL is that it does not contain Zn or its very reactive precursor DEZ. In the first test, the initial ALD conditions of Zn-containing ESLs were therefore mimicked by using three ALD cycles of ZnS (DEZ and H2S) before\\ncontinuing on with a TGO 0.077 ESL. The resulting JV data for these solar cells show that Voc improved to values comparable to using ZGO 0.32 ESL.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_25_figure_2.jpg","caption":"Figure 2. (a) Cation ratio measured by XRF/RBS for TGO and ZGO films in Table 1 as a function of the pulse ratio of the supercycle process. (b) GPC measured by XRR for the TGO and ZGO films (Table S2).","id":"train/atomic-layer-deposition/experimental-usecase/25/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/25/figure_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/Adam Hultqvist et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":508,"height":719,"image_format":"jpeg","image_sha256":"80089a83fb11fcacebd3bb0acf1491c25a316602751d003b45aae81f7f990c50","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":2,"y":366,"width":504,"height":352},{"panel_id":"a","x":0,"y":0,"width":507,"height":364}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between pulse ratio and cation ratio measured from RBF/XPS for TGO and ZGO.\"},{\"panel_id\":\"b\",\"text\":\"The line chart illustrates the growth per cycle against pulse ratio for TGO and ZGO.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulse Ratio Ge/(Ge + Sn or Zn) | Cation Ratio (TGO) | Cation Ratio (ZGO) |\\n|--------------------------------|---------------------|---------------------|\\n| 0.0 | 0.00 | 0.00 |\\n| 0.1 | 0.08 | 0.02 |\\n| 0.2 | 0.15 | 0.03 |\\n| 0.4 | 0.30 | 0.05 |\\n| 0.6 | 0.45 | 0.10 |\\n| 0.8 | 0.70 | 0.40 |\\n| 1.0 | 1.00 | 1.00 |\"},{\"panel_id\":\"b\",\"text\":\"| Pulse Ratio Ge/(Ge + Sn or Zn) | Growth per Cycle (TGO) [Å/cycle] | Growth per Cycle (ZGO) [Å/cycle] |\\n|--------------------------------|-----------------------------------|-----------------------------------|\\n| 0.0 | 1.10 | 2.00 |\\n| 0.1 | 1.05 | 1.80 |\\n| 0.2 | 1.00 | 1.60 |\\n| 0.4 | 0.95 | 1.40 |\\n| 0.6 | 0.90 | 1.20 |\\n| 0.8 | 0.85 | 1.00 |\\n| 1.0 | 0.80 | 0.80 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The GPC for these films decreased for an increasing Ge pulse ratio of the ALD ZGO process, even to such an extent that it became substantially lower than for the binary GeOy and ZnO processes. The QCM data in the SI also showed that the MPC for each GeOy or ZnO subcycle decreased in the ternary ZGO process. All of these trends suggest that the GeOy and ZnO subcycles were not fully compatible with each other due to unfavorable surface conditions.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The measured RBS/XRF [Ge]/([Ge] + [Sn]) cation ratio, x-value, for TGO films on fused silica is just a bit lower than the ALD Ge/(Ge + Sn) pulse ratio. The measured growth per cycle (GPC) for these films decreases as the pulse ratio increases (b) . This trend appears almost as a linear combination of the lower GPC GeOy subcycle and the larger GPC SnOy subcycle. Both the trend in the cation ratio and the trend in GPC are also supported by QCM data suggest that the SnOy and GeOy subcycles affect each other only to a minor extent.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Varying the Ge/(Ge + Zn) pulse ratio of the ALD process varied the XRF/RBS [Ge]/([Ge] +[Zn]) cation ratio, the x-value, measured for films on fused\\nsilica, but the film cation ratio severely lags behind the ALD pulse ratio\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_25_figure_8.jpg","caption":"Figure 8. Schematic illustration of the roughly estimated $E_{c}$ and $E_{v}$ trends as a function of the cation ratio, $x_{i}$ of a TGO and b ZGO. The estimations are based on the optical absorption and the XPS $E_{v}$ spectra from this study and from the $\\mathrm{SnO}_{y} / \\mathrm{CIGS}$ , and $\\mathrm{ZnO} / \\mathrm{CIGS}$ band offset and ACIGS band position data from previous studies. The cation ratio where the ACIGS solar cells (see the next section) start showing FF losses is also indicated.","id":"train/atomic-layer-deposition/experimental-usecase/25/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/25/figure_8","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/Adam Hultqvist et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":508,"height":714,"image_format":"jpeg","image_sha256":"cf95aa1c61c3f0e226c6100b7767c5dda4f7fbfacbb9ee726b240d15dfc93eaf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":363,"width":506,"height":330},{"panel_id":"a","x":1,"y":1,"width":504,"height":355}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the energy difference between conduction bands and valence bands of ACIGS and TGO materials as a function of TGO cation ratio.\"},{\"panel_id\":\"b\",\"text\":\"The line chart illustrates the energy difference between conduction bands and valence bands of ACIGS and ZGO materials as a function of ZGO cation ratio.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TGO cation ratio (x) | E_c (TGO) [eV] | E_v (TGO) [eV] | E_c (ACIGS) [eV] | E_v (ACIGS) [eV] |\\n|-----------------------|-----------------|-----------------|-------------------|-------------------|\\n| 0.00 | +0.2 | -3.0 | 0.0 | -1.0 |\\n| 0.10 | +0.3 | -3.0 | 0.0 | -1.0 |\\n| 0.20 (FF loss) | +0.4 | -3.0 | 0.0 | -1.0 |\\n| 0.30 | +0.6 | -3.0 | 0.0 | -1.0 |\"},{\"panel_id\":\"b\",\"text\":\"| ZGO cation ratio (x) | E_c (ZGO) [eV] | E_v (ZGO) [eV] | E_c (ACIGS) [eV] | E_v (ACIGS) [eV] |\\n|-----------------------|-----------------|-----------------|-------------------|-------------------|\\n| 0.00 | +0.2 | -3.5 | 0.0 | -1.0 |\\n| 0.10 | +0.3 | -3.6 | 0.0 | -1.0 |\\n| 0.20 | +0.4 | -3.7 | 0.0 | -1.0 |\\n| 0.30 (FF loss) | +0.5 | -3.8 | 0.0 | -1.0 |\\n| 0.40 | +0.6 | -4.0 | 0.0 | -1.0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The estimations are based on the optical absorption and the XPS Ev spectra from this study and from the SnOy/CIGS, and ZnO/CIGS band offset and ACIGS band position data from previous studies\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"While the low-cation-ratio ZGO films likely have direct Eg, there was a transition toward X-ray amorphous films for higher cation ratios, which are likely\\nto give them indirect Eg. For simplicity, all of the Eg values of ZGO were therefore estimated using an indirect Eg model.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. For ZGO, FF losses occur at a cation ratio of 0.32\\n2. For TGO, FF losses occur at a cation ratio of 0.16\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TGO sample set also showed a noteworthy correlation between the large tailing observed in the optical absorption and XPS Ev spectra, the high resistivity, and the amorphous nature of these films. Compared to the previous study using a high-temperature ALD process, the films in this\\nstudy are similar in terms of being amorphous, showing tails in the optical absorption and an increasing Ec position with increasing Ge content.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_25_figure_9.jpg","caption":"Figure 9. $JV$ sweeps of representative solar cells using (a) TGO and (b) ZGO ESLs.","id":"train/atomic-layer-deposition/experimental-usecase/25/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/25/figure_9","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/Adam Hultqvist et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":503,"height":708,"image_format":"jpeg","image_sha256":"de9a22f837f59bce27fff78c273e949785ae4e67f835ad7ad75d1fc95f50aed4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":353,"width":497,"height":353},{"panel_id":"a","x":0,"y":4,"width":499,"height":357}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the JV characteristics of devices using TGO as ESL with varying doping values.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the JV characteristics of devices using ZGO as ESL with varying doping values.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Bias (V) | CdS | x = 0 | x = 0.065 | x = 0.077 | x = 0.10 | x = 0.16 | x = 0.30 |\\n|----------|-----|-------|-----------|-----------|----------|----------|----------|\\n| -0.5 | -35 | -35 | -35 | -35 | -35 | -35 | -30 |\\n| 0.0 | 0 | 0 | 0 | 0 | 0 | 0 | -3 |\\n| 0.3 |-35 | -35 | -35 | -35 | -35 | -35 | 0 |\\n| 0.5 | -35 | -10 | -15 | -18 | -20 | -18 |0 |\\n| 0.7 | 0 | 20 | 25 | 28 | 30 | 20 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Bias (V) | CdS | x = 0 | x = 0.032 | x = 0.12 | x = 0.19 | x = 0.26 | x = 0.32 | x = 0.37 |\\n|----------|-----|-------|-----------|----------|----------|----------|----------|----------|\\n| -0.4 | -35 | -35 | -40 | -35 | -35 | -35 | -35 | -35 |\\n| 0.0 | -35 | -35 | -35 | -35 | -35 | -35 | -35 | -35 |\\n| 0.2 | -35 | -30 | -28 | -32 | -34 | -35 | -35 | -35 |\\n| 0.4 | 0 | 20 | 30 | 35 | -34 | -35 | 25 | -10 |\\n| 0.6 | 0 | - | - | - | 0 | 0 | 0 | 0 |\\n| 0.8 | - | - | - | - |20 | 20 | 40 | 20 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the Ge content was increased for the ZGO films, the solar cells showed a decrease in Voc, compared to solar cells using ZnO . When the Ge content increased further, there was an increase in Voc up to ZGO 0.37.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"From figure a it appears, the device characteristics of CdS is better than device b as the Voc seems higher in case a than case b.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. ZnO:Al/ZnO/TGO/ACIGS/Mo/SLG solar cell stacks\\n, 2. ZnO:Al/ZnO/ZGO/ACIGS/Mo/SLG solar cell stacks\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Until TGO 0.10, the Voc of the solar cells increased with increasing Ge content. At the same time, the short circuit current density (Jsc) remained unchanged. For TGO 0.16, both the Voc and the FF started to drop off due to a kink in the J−V curve around Voc. Finally, the solar cells with TGO 0.30 show low FF, low Voc and a tiny Jsc, suggesting that the transport of photoexcited electrons has been almost completely hampered.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_1.jpg","caption":"Figure 1. ALD growth rates for $\\mathrm{In}_2\\mathrm{O}_3$ $(\\Delta)$ $\\mathrm{SnO_2}$ $(\\Omega)$ and ITO $(\\bullet)$ versus deposition temperature. Potential ALD window for ITO growth is indicated.","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_1","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":597,"height":583,"image_format":"jpeg","image_sha256":"5b979595bd0059ef4b778f56f18fae8d2d3cc54d339d8565296a00a1e17c2017","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":597,"height":583}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart compares the growth rate per cycle of Tin Oxide, Indium Oxide, and ITO films as a function of deposition temperature. Both Tin and Indium Oxide show a general increase in growth rate with temperature, while ITO exhibits a stable region between ~200 - 300 °C, identified as the “ITO Window,” where optimal co-deposition occurs.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition Temperature (°C) | Tin Oxide (Å/Cycle) | Indium Oxide (Å/Cycle) | ITO (Å/Cycle) |\\n|-----------------------------|--------------------|-------------------------|---------------|\\n| 100 | 0.5 | 1.2 | 1.3 |\\n| 150 | 0.8 | 1.3 | 1.2 |\\n| 200 | 1.5 | 1.4 | 1.3 |\\n| 250 | 2.0 | 1.5 | 1.4 |\\n| 300 | 2.8 | 1.6 | 1.5 |\\n| 350 | 2.9 | 2.5 | 1.6 |\\n| 400 | 3.0 | 2.7 | 1.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Tin Oxide shows a steep increase in growth rate with temperature, Indium Oxide increases more moderately, and ITO remains stable between 200–300 °C, forming a defined “ITO Window.”\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Growth rate (Å/Cycle).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Tin Oxide, Indium Oxide, ITO (Indium Tin Oxide)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_3.jpg","caption":"Figure 3. $\\mathrm{SnO_2}$ content versus percentage of $\\mathrm{SnO_2}$ cycles for ALD ITO films determined by XRF. Dashed line shows expected $\\mathrm{SnO_2}$ content as calculated using a rule-of-mixtures formula.","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":572,"height":570,"image_format":"jpeg","image_sha256":"62decce0f40a7ba517118b3cdd5a7bfc0108d6a4ac540d5e0780c6677e11c62b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":572,"height":570}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the increase in SnO₂ content (mol %) as a function of SnO₂ cycle percentage, as measured by XRF. A dashed line indicates the expected values from the Rule of Mixtures. The measured data rises faster than predicted, suggesting non-linear incorporation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| % SnO₂ Cycles | SnO₂ Content (mol %) |\\n|---------------|----------------------|\\n| 0 | 0 |\\n| 5 | 2 |\\n| 10 | 12 |\\n| 15 | 26 |\\n| 25 | 40 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The measured SnO₂ content increases faster than the Rule of Mixtures prediction, indicating a non-linear trend in incorporation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Enhanced SnO₂ uptake, Possible non-ideal mixing behavior, Deviations from theoretical assumptions\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_30_figure_8.jpg","caption":"Figure 8. Representative magnetization versus external field curves of doped iron oxide films deposited from $\\mathrm{CpFeC_5H_4CHN(CH_3)_2}$ at $375^{\\circ}C$ Mg/Fe atomic ratios, film thicknesses, hysteresis parameters and measurement temperatures are given by labels. Annealing was carried out in forming gas at $450^{\\circ}C$ for $30\\mathrm{min}$ (Color online)","id":"train/atomic-layer-deposition/experimental-usecase/30/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/30/figure_8","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/Kaupo Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1011,"height":791,"image_format":"jpeg","image_sha256":"dee718efc7dc61b42f321ddf933a34d2dddbc5d278becb3dfc59faaf204bb344","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":4,"width":499,"height":384},{"panel_id":"b","x":500,"y":2,"width":510,"height":393},{"panel_id":"c","x":8,"y":398,"width":502,"height":391},{"panel_id":"d","x":500,"y":394,"width":511,"height":395}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows hysteresis loops of magnetic material Mg/Fe = 0.017 at various temperatures (10, 50, 100, 200, 300 K) with as deposited condition , the thickness of the film ~425 nm\"},{\"panel_id\":\"b\",\"text\":\"The figure shows hysteresis loops of magnetic material Mg/Fe = 0.061 at various temperatures (10, 50, 100, 200, 300 K) with as deposited condition , the thickness of the film ~411 nm\"},{\"panel_id\":\"c\",\"text\":\"The figure shows hysteresis loops of magnetic material Mg/Fe = 0.017 at various temperatures after annealing at 450◦C\"},{\"panel_id\":\"d\",\"text\":\"The figure shows hysteresis loops of magnetic material Mg/Fe = 0.061 at various temperatures after annealing at 450◦C. The hysteresis loops shows noticable magnetic behavior with high magnetic saturations and low coercive fields.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (K) | Saturation Magnetization Ms (emu/cm³) | Coercivity Hc (Oe) |\\n|-----------------|---------------------------------------|-------------------|\\n| 300 | ~200 | 300 |\\n| 200 | ~200 | ~300 |\\n| 100 | ~200 | ~300 |\\n| 50 | ~200 | ~300 |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (K) | Saturation Magnetization Ms (emu/cm³) | Coercivity Hc (Oe) |\\n|-----------------|---------------------------------------|-------------------|\\n| 300 | 491 | 150 |\\n| 200 | ~500 | ~150 |\\n| 100 | ~500 | ~150 |\\n| 50 | ~500 | ~150 |\\n| 10 | ~500 | ~150 |\"},{\"panel_id\":\"c\",\"text\":\"| Temperature (K) | Saturation Magnetization Ms (emu/cm³) | Coercivity Hc (Oe) |\\n|-----------------|---------------------------------------|-------------------|\\n| 300 | 280 | 280 |\\n| 200 | ~290 | ~280 |\\n| 100 | ~290 | ~280 |\\n| 50 | ~290 | ~280 |\\n| 10 | ~290 | ~280 |\"},{\"panel_id\":\"d\",\"text\":\"| Temperature (K) | Saturation Magnetization Ms (emu/cm³) | Coercivity Hc (Oe) |\\n|-----------------|---------------------------------------|-------------------|\\n| 300 | 274 | 200 |\\n| 200 | ~280 | ~200 |\\n| 100 | ~280 | ~200 |\\n| 50 | ~280 | ~200 |\\n| 10 | ~280 | ~200 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the Mg content increases, the Hc value tends to decrease.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the as-deposited state, increasing Mg/Fe from 0.017 to 0.061 increases Ms from about 200 to about 491 emu/cm³. Over the same change, Hc decreases from about 300 to about 150 Oe. This matches the broader trend described in the paper that higher Mg in this range reduces coercivity while increasing saturation magnetization up to a limit.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The best room-temperature magnetization in this figure is the as-deposited Mg/Fe = 0.061 film (panel b). It shows Ms ≈ 491 emu/cm³ at 300 K, substantially higher than the Mg/Fe = 0.017 film and higher than either annealed case. This directly supports the process-optimization message that moderate Mg levels can strongly enhance magnetic performance (while other processing steps can change Ms and Hc in different directions).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mg incorporation and FGA alter the cation distribution in the spinel lattice. At moderate Mg levels, magnetite formation is favored, increasing Mₛ and lowering Hc. At higher Mg levels, Mg²⁺ substitutes Fe³⁺ in octahedral sites, reducing magnetic exchange interactions and introducing lattice strain, which increases coercivity and decreases magnetization. Annealing further modifies grain boundaries and defect density, influencing domain wall motion.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. In the nondoped and as-deposited films the HC ranged from 485 to 1950 Oe between 300 and 10 K.\\n2. In the films with Mg/Fe atomic ratio of 0.017 the HC was in the range of 300–1260 Oe between 300 and 10 K. \\n3. With increase in the Mg content to Mg/Fe ratio of 0.062 the HC decreased toward the range of 150–460 Oe between 300 and 10 K.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 10 K.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing temperature reduces both the coercive field and the saturation magnetisation. The hysteresis loops become narrower at higher temperatures, indicating weaker magnetic ordering.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The coercive field decreases as the Mg/Fe ratio increases.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mg/Fe=0.017 and the film as-deposited\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The hysteresis parameter Hc seems to decrease for increasing measurement temperature. This is seen in all subfigures, however the trend is less big for the highly doped films.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Hc is 1500 Oe.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Saturation magnetization increases from ~200 emu cm⁻³ at low Mg content to ~491 emu cm⁻³ at higher Mg content.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"x-axis: magnetic field (Oe)\\n\\ny-axis: magnetization, M (emu/cm³)\\n\\ncurves: measurements at 300, 200, 100, 50, and 10 K for the same sample/state\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In each panel, Hc increases as temperature decreases (loops widen at low T), which is typical for ferri/ferromagnetic films. After forming-gas annealing, Hc is generally reduced at higher temperatures compared with the as-deposited state for these kinds of samples. The paper attributes the anneal-driven reduction in coercivity to crystal growth and increased average magnetic domain size.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"FGA modifies both saturation magnetization (Mₛ) and coercivity (Hc). For low Mg content (Mg/Fe = 0.017), Mₛ increases from 200 → 280 emu/cm³, and Hc slightly decreases from 300 → 280 Oe, indicating improved magnetite crystallinity and reduced pinning. For higher Mg content (Mg/Fe = 0.061), Mₛ decreases from 491 → 274 emu/cm³, while Hc increases from 150 → 200 Oe, suggesting that excess Mg and annealing lead to cation redistribution and reduced magnetic Fe content.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As-deposited: Increasing Mg/Fe from 0.017 to 0.061 significantly raises Mₛ (200 → 491 emu/cm³) and lowers Hc (300 → 150 Oe), indicating that moderate Mg promotes magnetite formation and soft magnetic behavior.\\nAfter FGA: Low Mg films gain magnetization (Mₛ = 280 emu/cm³), while high Mg films lose magnetization (Mₛ = 274 emu/cm³) and become harder (Hc rises to 200 Oe).\\nMg doping initially enhances magnetization, but excessive Mg combined with annealing reduces Fe magnetic sites and increases anisotropy.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, only up to a certain limit.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The coercive field (Hc) decreases systematically with increasing Mg doping, indicating that Mg addition softens the magnetic behaviour. For instance, Hc drops from roughly 485-1950 Oe in undoped films to 150-460 Oe at a Mg/Fe ratio of 0.062. Annealing further reduces Hc, consistent with structural relaxation and grain coarsening. Meanwhile, the saturation magnetization (μs) increases with moderate Mg incorporation, suggesting improved ferromagnetic ordering and a higher proportion of reduced iron oxide phases such as magnetite. However, excessive Mg content diminishes μs again, likely due to the formation of a nonmagnetic ternary phase like magnesioferrite.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 820 and 895 K.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Curie temperatures remain between 820 and 895 K, close to that of bulk magnetite, confirming that the dominant phase retains strong ferrimagnetic character.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Annealing of all films was carried out at 450 °C for 30 minutes.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Magnetic field (Oe).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The loop becomes wider as the temperature drops.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 300 K.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The annealing seems to have the effect to create films with roughly the same saturation magnetization, even if the as-deposited films deviate from this level.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Coercivity decreases slightly from ~300 Oe to ~280 Oe after annealing.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Annealing likely reduces structural disorder and improves cation distribution within the iron-oxide lattice. This suppresses antiferromagnetic coupling and enhances net magnetic alignment. The increase in saturation magnetization therefore reflects improved magnetic ordering rather than thickness effects.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The as-deposited film with Mg/Fe = 0.061 offers the best performance for sensors and spintronics due to its high Mₛ (491 emu/cm³) and low Hc (150 Oe), enabling strong magnetic response and easy switching. FGA-treated low-Mg films (Mg/Fe = 0.017) are suitable for applications requiring moderate coercivity and thermal stability, while high-Mg annealed films may be useful for data storage where higher Hc provides stability against demagnetization.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The coercivity and magnetic moment decreased with increase in magnesium content. Therefore, high amounts of magnesium may not be advantageous in terms of increasing both HC and μS, maybe due to the formation of an additive ternary phase, e.g. magnesioferrite, in the film bulk.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The as-deposited sample ,The Mg = 0.001 doped sample ,The Mg = 0.017 doped sample.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The main affected properties are the coercive field, Saturation magnetization, Loop shape of the hysteresis curves, Temperature dependence of magnetization\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"280 emu/cm^3.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Hc value is higher for the annealed samples than for the as-deposited one.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The annealed film\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The as-deposited films show that with increasing dopant level the saturated magnetization increases significantly, whilst the Hc parameter decreases.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Measuring hysteresis down to 10 K reduces thermal activation of domain walls, making intrinsic magnetic anisotropy more apparent. This helps separate temperature-driven loop broadening from composition-dependent effects. The comparison clarifies how Mg content and annealing influence intrinsic magnetic ordering.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The annealing procedure also decreased the HC.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Adjusting the Mg content allows fine control over the balance between coercivity and saturation magnetization, which is crucial for practical magnetic applications. Moderate Mg doping can soften the magnetic response by lowering coercivity while maintaining or slightly improving magnetization, making the films more suitable for applications such as magnetic sensors or spintronic components. However, excessive Mg incorporation can introduce secondary phases like magnesioferrite, which limits further performance gains. This figure shows that careful compositional tuning, combined with annealing and temperature control, is essential for optimizing magnetic behavior.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_30_figure_9.jpg","caption":"Figure 9. Magnetization versus measurement temperature curves of selected samples after forming gas annealing measured under FGD field cooling (ZFC) and field cooling (FC) regimes. The composition, growth temperatures and film thicknesses are described by labels. The peaks associated with the Verwey transition of magnetite are denoted by $\\mathrm{T_V}$","id":"train/atomic-layer-deposition/experimental-usecase/30/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/30/figure_9","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/Kaupo Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":528,"height":1280,"image_format":"jpeg","image_sha256":"15c457cf92189c9aa5b6e1aa40acaa232e48cdaf1bb9d043beb39c87e84da1a9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":512,"height":429},{"panel_id":"b","x":5,"y":434,"width":522,"height":415},{"panel_id":"c","x":5,"y":855,"width":522,"height":418}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot shows the temperature dependence of magnetic susceptibility for Fe₂O₃ nanoparticles grown at 450 °C with an average diameter of 705 nm. Measurements were carried out using a field gradient apparatus (FGA) under an applied magnetic field of 1000 Oe, following zero-field-cooled (ZFC) and field-cooled (FC) protocols after forming gas annealing. Features associated with the Verwey transition temperature (T𝑉) of magnetite are indicated.\"},{\"panel_id\":\"b\",\"text\":\"This plot presents the temperature dependence of magnetic moment per gram for a composite consisting of 100 × Fe₂O₃ and 4 × (3 × MgO + 100 × Fe₂O₃), grown at 425 °C with an average diameter of 183 nm. Measurements were performed using an FGA under a magnetic field of 1000 Oe in both ZFC and FC modes after forming gas annealing. The Verwey transition temperature (TV) is marked.\"},{\"panel_id\":\"c\",\"text\":\"The plot shows the temperature dependence of magnetic moment per gram for a composite composed of 100 × Fe₂O₃ and 15 × (10 × MgO + 100 × Fe₂O₃), grown at 375 °C with an average diameter of 411 nm. Magnetization measurements were conducted using an FGA with an applied magnetic field of 1000 Oe under ZFC and FC conditions following forming gas annealing, with the Verwey transition temperature (T𝑉) indicated.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (K) | FC (emu/g) | ZFC (emu/g) |\\n| --------------- | ---------- | ----------- |\\n| 10 | ~0.10 | ~0.01 |\\n| 50 | ~0.10 | ~0.03 |\\n| 100 | ~0.10 | ~0.07 |\\n| 125 | ~0.10 | ~0.10 |\\n| 200 | ~0.10 | ~0.09 |\\n| 300 | ~0.10 | ~0.08 |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (K) | FC (emu/g) | ZFC (emu/g) |\\n| --------------- | ---------- | ----------- |\\n| 10 | ~0.055 | ~0.030 |\\n| 50 | ~0.055 | ~0.040 |\\n| 100 | ~0.055 | ~0.050 |\\n| 120 | ~0.055 | ~0.055 |\\n| 200 | ~0.055 | ~0.050 |\\n| 300 | ~0.055 | ~0.045 |\"},{\"panel_id\":\"c\",\"text\":\"| Temperature (K) | FC (emu/g) | ZFC (emu/g) |\\n| --------------- | ---------- | ----------- |\\n| 10 | ~0.069 | ~0.068 |\\n| 50 | ~0.069 | ~0.069 |\\n| 100 | ~0.069 | ~0.070 |\\n| 150 | ~0.068 | ~0.069 |\\n| 200 | ~0.067 | ~0.068 |\\n| 300 | ~0.066 | ~0.067 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Growth temperature and composition.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For all three graphs, samples with different thickness are used. So it could be that this thickness plays a factor in the different magnetizations.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It suggests increased magnetic disorder and weakened long-range ordering.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In (a) a pronounced anomaly is marked at ~125 K. In (b) a similar anomaly remains visible around ~120 K. In (c) the anomaly is much less prominent, consistent with the stated trend that the Verwey signature weakens in films that are more disordered and/or contain higher MgO amounts.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A Verwey-type transition near ~120 K is a characteristic low-temperature transformation associated with magnetite (Fe₃O₄) (cubic-to-monoclinic symmetry change tied to cation ordering). Observing a step/jump in M–T around 120–125 K is therefore used as supporting evidence for the presence of magnetite in mixed-phase samples. In this paper, that interpretation is explicitly noted for selected annealed films showing the jump.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Verwey transition depends on stoichiometric magnetite with ordered Fe²⁺/Fe³⁺ distribution. Mg substitution and oxygen vacancies disrupt this order, lowering or smearing Tᵥ. Grain size and strain also matter: larger, well-crystallized grains show sharp Tᵥ and strong ZFC/FC splitting, while smaller or defect-rich grains broaden the transition and reduce irreversibility.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The transition lost its prominence in as-deposited films, in relatively disordered films grown at the lowest temperatures examined and in films containing relatively higher amounts of magnesium oxide\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Verwey transition visible near 120–125 K for composition variations, Lower growth temperatures reduce the transition magnitude, Thicker films show minor decreases in magnetization but overall similar trends\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"120 K.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Either the growth temperature could be lowered, or the Mg/Fe ratio could be increased.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dopant level is Mg/Fe = 0.062.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It implies well-preserved magnetite-like ordering.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Cryogenic sensors: Prefer films with a sharp Verwey transition and strong ZFC/FC separation (e.g., thick, low-Mg film), as these provide distinct low-temperature magnetic signatures. 2. Room-temperature devices: Favor films with suppressed or broadened Tᵥ (e.g., high-Mg film), ensuring stable magnetic behavior across 150–300 K without abrupt changes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The temperature dependence of magnetic moment was measured at a magnetic moment of 1000 Oe\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The undoped Fe₂O₃ sample shows a clear ZFC peak near 125 K, indicating strong blocking behavior. The Mg-containing sample grown at 425 °C shows a similar but weaker peak near 120 K. In contrast, the sample grown at 375 °C exhibits minimal FC–ZFC separation, suggesting suppressed or absent blocking.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1000 Oe.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Fe₂O₃ sample grown at 450 °C, The Fe₂O₃–MgO composite grown at 425 °C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 120–125 K.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"450 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The temperature is 125 K.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems that increasing the doping level, slightly increases the magnetic moment.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The separation reflects irreversible magnetic behavior caused by domain pinning or blocked magnetic moments. A strong divergence indicates a magnetically ordered phase with thermal history dependence. The convergence of FC and ZFC curves marks the temperature where magnetic domains become thermally unpinned.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It rises sharply and reaches a peak near 125 K.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ZFC: zero-field cooling measurement curve\\n\\nFC: field-cooling measurement curve\\n\\nApplied field during M–T: 1000 Oe\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Magnetite-like content is linked to the stronger ferrimagnetic response desired in these films, while hematite-dominant films tend to show much weaker magnetization. A Verwey-type feature provides an additional, temperature-dependent indicator that reduced/spinel-like iron oxide is present after forming-gas anneal. This helps connect processing (growth temperature, Mg dosing, anneal) to the observed magnetic behavior.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Verwey transition (Tᵥ ≈ 120–125 K) is a hallmark of magnetite (Fe₃O₄) with long-range charge ordering. Its appearance after FGA shows that annealing in a reducing atmosphere successfully converted hematite or maghemite phases into magnetite and improved crystallinity. This process also reduces oxygen content and stabilizes Fe²⁺/Fe³⁺ mixed valence states, essential for magnetite formation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Pure Fe₂O₃ film (450 °C, thick): Shows a sharp Tᵥ at ~125 K and strong ZFC/FC separation, indicating well-ordered magnetite after FGA.\\nLow Mg doping (Mg/Fe ≈ 0.021, 425 °C): Tᵥ shifts slightly lower (~120 K) and ZFC/FC separation narrows, suggesting smaller grains and mild disorder. High Mg doping (Mg/Fe ≈ 0.062, 375 °C): Tᵥ is broadened or suppressed, and ZFC/FC curves nearly overlap, indicating disrupted charge ordering and increased structural disorder due to Mg substitution and lower growth temperature\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A jump in magnetization-versus-temperature curves is known as the Verwey transition. At the Verwey transition temperature, TV, ca. 120 K, magnetite is supposed to transform from cubic (T > TV) to monoclinic (T < TV) symmetry. This transformation is related to changes in cation ordering and, at a slightly higher temperature (ca. 130 K) to changes in magnetocrystalline anisotropy as well as switching the easy and hard magnetization axes. The Verwey transition can be used for identification of magnetite in pure or mixed phase samples.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1000 Oe.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At the Verwey transition temperature, TV, ca. 120 K, magnetite is supposed to transform from cubic (T > T_V) to monoclinic (T < T_V) symmetry.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the Mg fraction in the film increases, T_V decreases. As the Mg fraction increases, the difference between ZFC and FC also becomes more pronounced, but the transition point becomes less clear. Finally, an increase in Mg content also causes an overall decrease of magnetization, which is consistent with earlier observations in this work.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the undoped iron oxide film, it is 125 K and a magnetization of 0.11 emu/g; The iron oxide film with Mg/Fe = 0.021, T_V = 120 K, M = 0.055; The iron oxide film with Mg/Fe = 0.062, the T_V is not stated.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 125 K, as indicated by the label Tv.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 120 K.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 125 K.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Composition strongly affects the Verwey transition, with magnetite-containing films showing a peak near 120–125 K. Growth temperature also influences magnetic behavior, as lower temperatures suppress the Verwey transition, leading to smaller differences between FC and ZFC magnetization. Film thickness has a subtler effect, slightly modifying magnetization magnitudes but not significantly altering the overall transition features. Together, these factors determine the magnetic phase evolution and the shape of the multi-line curves.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_31_figure_1.jpg","caption":"Figure 1. XPS depth profile of thermal ALD Co on Si(001) substrate from $\\mathrm{CoCp(CO)_2}$ and $\\mathrm{H}_2$ showing the Co, C, O, and Si contents in the film.","id":"train/atomic-layer-deposition/experimental-usecase/31/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/31/figure_1","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/Han-Bo-Ram Lee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":544,"height":414,"image_format":"jpeg","image_sha256":"7866bf6abb3f8b279110bcacd69f0ef2524b6c5c33563b7f27c33e8dc514da89","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":540,"height":409}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure shows an XPS depth profile of a thermal-ALD Co film deposited on Si(001) using CoCp(CO)₂ and H₂. The profile reveals a carbon-rich film with ~40–50 at% C and only ~45–50 at% Co throughout most of the depth, along with a few at% oxygen contamination. The sharp rise in Si near ~25–30 min sputtering marks the Co/Si interface, confirming the film thickness. Overall, the data demonstrate that thermal ALD produces a Co–C composite rather than pure metallic Co, indicating poor ligand removal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Element|Trend across film|Interpretation|\\n|--------|-----------------|--------------|\\n|Co|~45–50 at% throughout|Indicates incomplete metal formation|\\n|C|~40–50 at% throughout|Severe carbon contamination from ligands|\\n|O|Low, few at%|Minor oxidation/impurity|\\n|Si|Rises sharply at end|Marks Co/Si interface (film thickness)|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Carbon\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Interconnect applications require low-resistivity, high-purity metallic cobalt. The XPS depth profile reveals that the thermal-ALD film contains nearly equal amounts of cobalt and carbon, forming a carbon-rich Co–C composite rather than metallic Co. Such films exhibit very high electrical resistivity and poor reliability, making them unsuitable for device applications and motivating the need for plasma-enhanced ALD.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"High carbon content (~40–50 at%), Relatively low cobalt content (~45–50 at%), Presence of oxygen impurities, Formation of a Co–C composite structure\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_32_figure_5.jpg","caption":"Figure 5. Leakage current densities vs electric fields of thermal and PEALD (a) $\\mathrm{Ta}_2\\mathrm{O}_5$ and (b) $\\mathrm{TiO_2}$ thin film. The film thickness was $10\\mathrm{nm}$ for all films, and the growth temperatures were $250^{\\circ}\\mathrm{C}$ for $\\mathrm{Ta}_2\\mathrm{O}_5$ and $200^{\\circ}\\mathrm{C}$ for $\\mathrm{TiO_2}$ respectively.","id":"train/atomic-layer-deposition/experimental-usecase/32/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/32/figure_5","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/W. J. Maeng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":678,"height":953,"image_format":"jpeg","image_sha256":"a96d4db318206463e79cf7b97d58885b42b7cae1e73313bdcb06fc5c9cf3097d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":672,"height":435},{"panel_id":"b","x":1,"y":436,"width":670,"height":511}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Leakage current density versus electric field for 10 nm Ta₂O₅ films grown at 250°C. PE-ALD yields approximately two orders of magnitude lower leakage (~8×10⁻⁷ A/cm²) compared to thermal ALD (~6×10⁻⁵ A/cm²) at 1 MV/cm.\"},{\"panel_id\":\"b\",\"text\":\"Leakage current density versus electric field for 10 nm TiO₂ films grown at 200°C. PE-ALD again shows lower leakage (~7×10⁻⁴ A/cm²) than thermal ALD (~5×10⁻³ A/cm²) at 1 MV/cm, though the difference is smaller than for Ta₂O₅.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Electric Field, MV/cm | Thermal ALD (A/cm²) | PE-ALD (A/cm²) |\\n|---|---|---|\\n| 0 | 1×10⁻⁷ | 5×10⁻⁸ |\\n| 0.1 | 5×10⁻⁷ | 7×10⁻⁸ |\\n| 0.25 | 3×10⁻⁶ | 1×10⁻⁷ |\\n| 0.5 | 2×10⁻⁵ | 3×10⁻⁷ |\\n| 0.75 | 5×10⁻⁵ | 7×10⁻⁷ |\\n| 1.0 | 7×10⁻⁵ | 2×10⁻⁶ |\\n| 1.5 | 1×10⁻⁴ | 7×10⁻⁶ |\\n| 2.0 | 1.5×10⁻⁴ | 2×10⁻⁵ |\"},{\"panel_id\":\"b\",\"text\":\"| Electric Field, MV/cm | Thermal ALD (A/cm²) | PE-ALD (A/cm²) |\\n|---|---|---|\\n| 0 | 2×10⁻³ | 5×10⁻⁵ |\\n| 0.1 | 3×10⁻³ | 8×10⁻⁵ |\\n| 0.25 | 3.5×10⁻³ | 2×10⁻⁴ |\\n| 0.5 | 4×10⁻³ | 4×10⁻⁴ |\\n| 0.75 | 5×10⁻³ | 5×10⁻⁴ |\\n| 1.0 | 6×10⁻³ | 6×10⁻⁴ |\\n| 1.5 | 8×10⁻³ | 8×10⁻⁴ |\\n| 2.0 | 1×10⁻² | 1×10⁻³ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"PE-ALD Ta₂O₅ exhibits a leakage current density of approximately 8×10⁻⁷ A/cm² at 1 MV/cm, which is about two orders of magnitude lower than thermal ALD Ta₂O₅ at approximately 6×10⁻⁵ A/cm². This substantial improvement makes PE-ALD Ta₂O₅ from PDMAT competitive with or better than previously reported values for PE-ALD Ta₂O₅ from ethoxide precursors.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Lower oxygen vacancy concentration, reduced carbon or silicon contamination, and smoother oxide/substrate interfaces observed by TEM.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"PE-ALD Ta₂O₅, with the lowest leakage current density of approximately 8×10⁻⁷ A/cm² at 1 MV/cm.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The improvement is greater for Ta₂O₅. PE-ALD reduces the leakage current by approximately two orders of magnitude for Ta₂O₅ (from ~6×10⁻⁵ to ~8×10⁻⁷ A/cm²), whereas for TiO₂ the reduction is less than one order of magnitude (from ~5×10⁻³ to ~7×10⁻⁴ A/cm²).\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_34_figure_1.jpg","caption":"Figure 1. Film thickness as function of number of cycles measured by in situ spectroscopic ellipsometry for ALD of Li-containing films using LiHMDS combined various coreactants at a table temperature of $200^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/34/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/34/figure_1","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/M. J. Pieters et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":570,"height":428,"image_format":"jpeg","image_sha256":"ced65fee56d9edc144257e3ba2f39e53a3aea9ec59cb0ea477100947b978045f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":570,"height":428}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a multiple -line chart showing the film thickness growth as a function of ALD cycle number for different oxidant/reactant chemistries. The growth rates vary significantly depending on the species used: H₂O exhibits the highest growth rate, followed by H₂* + O₂*, then O₂* + H₂*, and finally O₂* alone, which shows the slowest growth. The chart highlights how the choice of oxidant or co-reactant can strongly influence the cumulative thickness achieved over the same number of ALD cycles..\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle | O₂* (nm) | H₂O (nm) | H₂* + O₂* (nm) | O₂* + H₂* (nm) |\\n|-------|----------|----------|----------------|----------------|\\n| 0 | 0 | 0 | 0 | 0 |\\n| 50 | 10 | 30 | 20 | 15 |\\n| 100 | 20 | 60 | 40 | 30 |\\n| 150 | 30 | 90 | 60 | 45 |\\n| 200 | 40 | 120 | 80 | 60 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The faster and steeper thickness increase observed for H₂O compared to O₂* implies that H₂O is significantly more reactive or efficient as an oxidant in this ALD process. This could be due to more favorable surface reactions, faster ligand removal, or a more complete reaction per cycle. In contrast, O₂* likely leads to slower surface reactions, incomplete ligand removal, or passivation effects that limit the growth per cycle. This highlights the importance of selecting appropriate co-reactants for achieving desired film thickness and deposition rates.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"60 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"O₂*, O₂* + H₂*, H₂* + O₂*, H₂O\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_34_figure_3.jpg","caption":"Figure 3. (a) Time-resolved QMS data of selected $m / z$ values during the LiHMDS $+\\mathrm{H}_2\\mathrm{O}$ process. The standard ALD recipe (SR) at the start and end of the deposition, corresponding to the slow and fast growth regimes (earlier defined in Figure 1) respectively, are compared to the recipe with only $\\mathrm{H}_2\\mathrm{O}$ and the recipe with only LiHMDS. Zooms of the HMDS-related signals of $m / z = 15$ amu (b) and 146 amu (c) during the LiHMDS dose step.","id":"train/atomic-layer-deposition/experimental-usecase/34/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/34/figure_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/M. J. Pieters et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1136,"height":547,"image_format":"jpeg","image_sha256":"b20ed1b0bec210bf177c39e0b53b230e53c8de218d48f162b045e714118452af","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":595,"height":545},{"panel_id":"b","x":656,"y":3,"width":477,"height":260},{"panel_id":"c","x":661,"y":294,"width":472,"height":253}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents ion current traces for various species monitored during sequential pulsing of LiHMDS and H₂O in an ALD process. Subfigure (a) shows the evolution of ion signals for multiple mass fragments (e.g., CH₃⁺, H₂O⁺, NH(SiMe₃)₂⁺) across time and marks key events such as precursor pulses and surface reaction (SR) start and end times. Subfigures (b) and (c) zoom in on the time-resolved ion currents for specific m/z values (15 and 146), further detailing the temporal behavior of key reaction byproducts during the LiHMDS pulse. Together, the data provide insight into precursor decomposition and reaction dynamics on the surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | LiHMDS | SR start | H₂O | SR end |\\n|----------|--------|----------|-----|--------|\\n| 0 | 1E-12 | 1E-12 | 1E-12| 1E-12 |\\n| 5 | 1E-11 | 1E-11 | 1E-11| 1E-11 |\\n| 10 | 1E-12 | 1E-12 | 1E-12| 1E-12 |\\n| 15 | 1E-12 | 1E-12 | 1E-12| 1E-12 |\\n| 20 | 1E-12 | 1E-12 | 1E-12| 1E-12 |\\n| 25 | 1E-12 | 1E-12 | 1E-12| 1E-12 |\\n| 30 | 1E-12 | 1E-12 | 1E-12| 1E-12 |\\n| 75 | 1E-12 | 1E-12 | 1E-12| 1E-12 |\\n| 80 | 1E-12 | 1E-12 | 1E-12| 1E-12 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Ion current (A) |\\n|----------|-----------------|\\n| 0 | 1E-11 |\\n| 2 | 1E-10 |\\n| 4 | 1E-10 |\\n| 6 | 1E-10 |\\n| 8 | 1E-10 |\"},{\"panel_id\":\"c\",\"text\":\"| Time (s) | Ion current (A) |\\n|----------|-----------------|\\n| 0 | 1E-11 |\\n| 2 | 1E-10 |\\n| 4 | 1E-10 |\\n| 6 | 1E-10 |\\n| 8 | 1E-10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ion current profiles reveal the presence and intensity of specific species over time, corresponding to precursor introduction and reaction phases. In subfigure (a), CH₃⁺ and NH(SiMe₃)₂⁺ signals spike during the LiHMDS pulse, suggesting the release of ligand fragments due to surface reactions. The H₂O⁺ signal increases during the water pulse, indicating oxidant introduction. The timing of signal changes at SR start and SR end further supports surface-limited reactions consistent with ALD. Subfigures (b) and (c) confirm this by showing that key mass fragments peak during the precursor pulse, then decay rapidly, demonstrating self-limiting behavior and supporting the controlled nature of ALD chemistry.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approx. 5 seconds.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"CH₃⁺ (m/z = 15), H₂O⁺ (m/z = 18), NH(SiMe₃)₂⁺ (m/z = 146)\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_34_figure_5.jpg","caption":"Figure 5. Time-resolved QMS data of selected $m / z$ values during the LiHMDS $+\\mathrm{O}_2^*$ process. The standard ALD recipe (SR, red) is compared to the recipe with only $\\mathrm{O}_2^*$ (blue) and the recipe with LiHMDS and $\\mathrm{O}_2$ gas (black).","id":"train/atomic-layer-deposition/experimental-usecase/34/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/34/figure_5","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/M. J. Pieters et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":672,"height":905,"image_format":"jpeg","image_sha256":"cc7428746c384840e9889026dacc4e1732ab9082892714ad15e7d8e9ac45c815","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":672,"height":905}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents time-resolved mass spectrometry data for various reaction by-products during exposure to LiHMDS, O₂ plasma (O₂*), and the surface reaction (SR) step. The top four subplots show ion current intensity for species including H₂O⁺ (m/z=18), SiH₃⁺ (m/z=30), CO₂⁺ (m/z=44), and HNSi₂Me₃⁺ (m/z=146), with clear changes occurring after precursor and plasma exposure. CO₂ and H₂O peaks intensify during the SR period, consistent with ligand combustion, while HNSi₂Me₃⁺ appears following LiHMDS exposure, reflecting gas-phase fragmentation of unreacted precursor. The bottom panel tracks chamber pressure, showing correlation between dose timing and ion evolution. These measurements collectively map the dynamic release of volatile by-products during an ALD half-cycle..\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | LiHMDS (A) | O₂* (A) | SR (A) |\\n|----------|------------|---------|--------|\\n| 0 | 1.5E-12 | 1.5E-12 | 1.5E-12 |\\n| 5 | 1.6E-12 | 1.5E-12 | 1.5E-12 |\\n| 10 | 1.8E-12 | 1.5E-12 | 2.0E-12 |\\n| 15 | 2.2E-12 | 2.5E-12 | 3.0E-12 |\\n| 20 | 1.8E-12 | 3.5E-12 | 2.8E-12 |\\n| 25 | 1.5E-12 | 2.2E-12 | 1.7E-12 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 7 seconds, during the LiHMDS exposure phase.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"H₂O⁺ (m/z = 18), CO₂⁺ (m/z = 44), HNSi₂Me₃⁺ (m/z = 146)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sharp rise in CO₂⁺ and H₂O⁺ signals during the SR step indicates that combustion of organic ligands is occurring due to interaction with reactive oxygen species. These by-products are signatures of oxidative ligand removal, suggesting that the SR step is essential for fully eliminating unreacted LiHMDS residues. Understanding the timing and completeness of these signals helps in optimising precursor dosing and plasma timing to ensure efficient surface cleaning and minimal carbon incorporation in the final film , a key control parameter in ALD processes targeting high-purity oxides or nitrides\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_34_figure_6.jpg","caption":"Figure 6. Time-resolved QMS data of selected $m / z$ values during the LiHMDS $+\\mathrm{O}_2^*$ $+\\mathrm{H}_2^*$ process. The standard ALD recipe (SR) at the start and end of the deposition, corresponding to the slow and fast growth regimes respectively, are compared to the recipes with only LiHMDS, only $\\mathrm{O}_2^*$ $+\\mathrm{H}_2^*$ only LiHMDS $+\\mathrm{H}_2^*$ and only LiHMDS $+\\mathrm{O}_2^*$ .","id":"train/atomic-layer-deposition/experimental-usecase/34/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/34/figure_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/M. J. Pieters et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":666,"height":862,"image_format":"jpeg","image_sha256":"1519884a28622b3d034d2793afb139b84a0714f5d65df32101039ad5c9224ddc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":666,"height":862}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents ion current versus time data across several subplots, each tracking a different species (e.g., H₂O⁺, SiH₃⁺, CO₂⁺, HNSi₂Me₃⁺) detected by mass spectrometry at their respective m/z values. Different reactant conditions, such as LiHMDS alone, and combinations with O₂* and H₂*, are compared to observe how plasma and precursor combinations influence gaseous by-product formation. For example, the H₂O⁺ signal peaks during exposure to O₂*, indicating oxidative ligand removal, while HNSi₂Me₃⁺ signals provide evidence of volatile organosilicon fragments. The pressure trace at the bottom confirms timing of reagent pulses and surface reactions (SR), validating the synchrony of signal changes with process steps\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | LiHMDS (m/z=18) | O₂* (m/z=30) | H₂* (m/z=44) | H₂O (m/z=146) |\\n|----------|------------------|--------------|--------------|----------------|\\n| 0 | 1E-10 | 1E-11 | 1E-12 | 1E-12 |\\n| 10 | 1.2E-10 | 1.1E-11 | 1.3E-12 | 1.2E-12 |\\n| 20 | 1.5E-10 | 1.4E-11 | 1.6E-12 | 1.8E-12 |\\n| 30 | 1.3E-10 | 1.3E-11 | 1.4E-12 | 1.5E-12 |\\n| 40 | 1.1E-10 | 1.2E-11 | 1.2E-12 | 1.3E-12 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 20 seconds.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SiH₃⁺ (m/z = 30), CO₂⁺ (m/z = 44), and HNSi₂Me₃⁺ (m/z = 146)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ion current trends suggest that ligand combustion and surface reactions are being actively driven during the LiHMDS + O₂* + H₂* exposure. The sharp rise in H₂O⁺ indicates oxidative ligand breakdown, possibly of methyl or HMDS groups. Concurrent increases in CO₂⁺ and HNSi₂Me₃⁺ imply that both organic and silicon-containing fragments are released as volatile by-products. The sequential timing and magnitude of these signals can guide optimization of ALD cycle parameters, such as plasma duration and purge steps, to ensure complete removal of precursor residues and maximise film purity. This is particularly important when designing ALD processes for sensitive electronics, where residual ligands can impair dielectric or conductive properties.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_34_figure_7.jpg","caption":"Figure 7. Time-resolved QMS data of selected $m / z$ values during the $\\mathrm{LiHMDS} + \\mathrm{H}_2^* +\\mathrm{O}_2^*$ process. The standard ALD recipe (SR) at the start and end of the deposition, corresponding to the slow and fast growth regimes respectively, are compared to the recipes with only LiHMDS, only $\\mathrm{O}_2^* +\\mathrm{H}_2^*$ , only $\\mathrm{LiHMDS} + \\mathrm{H}_2^*$ and only $\\mathrm{LiHMDS} + \\mathrm{O}_2^*$ .","id":"train/atomic-layer-deposition/experimental-usecase/34/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/34/figure_7","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/M. J. Pieters et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":670,"height":991,"image_format":"jpeg","image_sha256":"3cd0e5563920b1ba0f26f131c8f90aa436129da192d53423c3bfc246612efbb9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":666,"height":796},{"panel_id":"b","x":4,"y":796,"width":664,"height":190}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents time-resolved quadrupole mass spectrometry (QMS) data tracking the evolution of several ion fragments (e.g., CH₃⁺, H₂O⁺, SiH₂⁺, CO₂⁺, HNSi₂Me₅⁺) under sequential exposure to LiHMDS, hydrogen plasma (H₂*), oxygen plasma (O₂*), and combined steps in an ALD process. Notably, the CH₃⁺ and HNSi₂Me₅⁺ signals are elevated during LiHMDS dosing, consistent with precursor fragmentation. H₂O⁺ and CO₂⁺ peaks emerge during SR phases involving oxidants, suggesting combustion of ligands. The pressure trace shows dosing windows for each reactant and aligns with corresponding ion signal surges. Together, these data elucidate the chemical pathways of ligand decomposition and by-product release across plasma-activated ALD cycles\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | LiHMDS (A) | LiHMDS+H₂* (A) | H₂*+O₂* (A) | LiHMDS+O₂* (A) | SR end (A) |\\n|----------|-------------|----------------|-------------|----------------|------------|\\n| 0 | 9.5E-11 | 9.5E-11 | 9.5E-11 | 9.5E-11 | 9.5E-11 |\\n| 5 | 1.1E-10 | 1.1E-10 | 1.1E-10 | 1.1E-10 | 1.1E-10 |\\n| 10 | 1.0E-10 | 1.0E-10 | 1.0E-10 | 1.0E-10 | 1.0E-10 |\\n| 15 | 9.0E-11 | 9.0E-11 | 9.2E-11 | 9.0E-11 | 9.0E-11 |\\n| 20 | 1.2E-10 | 1.1E-10 | 1.3E-10 | 1.2E-10 | 1.2E-10 |\\n| 25 | 8.5E-11 | 9.0E-11 | 1.1E-10 | 9.5E-11 | 9.0E-11 |\\n| 30 | 6.5E-11 | 7.5E-11 | 9.0E-11 | 7.0E-11 | 7.0E-11 |\\n| 35 | 5.0E-11 | 6.0E-11 | 8.0E-11 | 6.0E-11 | 6.0E-11 |\\n| 40 | 3.5E-11 | 4.0E-11 | 6.5E-11 | 4.5E-11 | 4.5E-11 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Pressure (mTorr) |\\n|----------|------------------|\\n| 0 | 0 |\\n| 5 | 50 |\\n| 10 | 120 |\\n| 15 | 50 |\\n| 20 | 0 |\\n| 25 | 50 |\\n| 30 | 100 |\\n| 35 | 50 |\\n| 40 | 0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The rise in CO₂⁺ during the SR period following O₂* exposure suggests effective combustion of organic ligands from the LiHMDS precursor, implying that oxidative plasma plays a key role in removing residual carbonaceous species. Meanwhile, HNSi₂Me₅⁺ signals peaking during the LiHMDS step indicate gas-phase fragmentation rather than surface retention. The differing behaviors underscore the sequential decomposition of ligands and highlight the importance of synchronizing plasma exposure to ensure full ligand removal.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 120 mTorr.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"H₂O⁺ (m/z=18), CO₂⁺ (m/z=44), and CH₃⁺ (m/z=15)\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_36_fig_12.jpg","caption":"Fig. 12 a Normalized values of $S_{ID} / I_{ID}^{2}$ plotted at various values of $(V_{GS} - V_{th})$ ; b Hooge's coefficient $(a_{\\parallel})$ plotted with respect to $(V_{GS} - V_{th})$ for the conventional HEMT and the $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ MOS-HEMT","id":"train/atomic-layer-deposition/experimental-usecase/36/fig_12","sample_id":"atomic-layer-deposition/experimental-usecase/36/fig_12","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"},{"panel_id":"e","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/Huan-Yu Shih et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1317,"height":1119,"image_format":"jpeg","image_sha256":"65e3f21e9cb75c06f4fe1b3b889c72b0bbc95117f8c02c188ea641338eaefee5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":31,"width":409,"height":567},{"panel_id":"b","x":410,"y":28,"width":299,"height":571},{"panel_id":"c","x":708,"y":35,"width":302,"height":558},{"panel_id":"d","x":1006,"y":37,"width":304,"height":557},{"panel_id":"e","x":312,"y":637,"width":737,"height":478}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multiple line chart displaying the relationship between frequency and Sid/ID for Ni/Au and MOS at V_GS=0.4.\"},{\"panel_id\":\"b\",\"text\":\"Multiple line chart displaying the relationship between frequency and Sid/ID for Ni/Au and MOS at V_GS=0.6.\"},{\"panel_id\":\"c\",\"text\":\"Multiple line chart displaying the relationship between frequency and Sid/ID for Ni/Au and MOS at V_GS=0.8.\"},{\"panel_id\":\"d\",\"text\":\"Multiple line chart displaying the relationship between frequency and Sid/ID for Ni/Au and MOS at V_GS=01.\"},{\"panel_id\":\"e\",\"text\":\"Scatter plot showing the relationship between VGS-Vth and Hooge's Parameter (αH) for Ni/Au-HEMT and Ga2O3 MOS-HEMT.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Frequency (Hz) | Ni/Au | MOS |\\n| --- | --- | --- |\\n| 10^2 | 10^-10 | 9*10^-10 |\\n| 10^4 | 10^-12 | 10^-11 |\"},{\"panel_id\":\"b\",\"text\":\"| Frequency (Hz) | Ni/Au | MOS |\\n| --- | --- | --- |\\n| 10^2 | 10^-10 | 9*10^-10 |\\n| 10^4 | 10^-12 | 10^-11 |\"},{\"panel_id\":\"c\",\"text\":\"| Frequency (Hz) | Ni/Au | MOS |\\n| --- | --- | --- |\\n| 10^2 | 9*10^-10 | 9*10^-11 |\\n| 10^4 | 10^-13 | 9^-13 |\"},{\"panel_id\":\"d\",\"text\":\"| Frequency (Hz) | Ni/Au | MOS |\\n| --- | --- | --- |\\n| 10^2 | 10^-11 | 10^-11 |\\n| 10^4 | 4-10^-13 | 9*10^-12 |\"},{\"panel_id\":\"e\",\"text\":\"| VGS-Vth (V) | Ni/Au-HEMT | Ga2O3 MOS-HEMT |\\n| --- | --- | --- |\\n| 0.2 | 8*10^-1 | 7*10^-2 |\\n| 0.4 | 10^-2 | 9*10^-2 |\\n| 0.6 | 9*10^-1 | 3*10^-3 |\\n| 0.8 | 4*10^-2 | 10^-3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the frequency increases, the S_iD/I_d ratio decreases for both the Ni/Au and the MOS curves.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Ni/Au sample.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"100 Hz.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The S_iD/I_d ratio decreases when the difference increases from 0.4 to 1.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_36_fig_3.jpg","caption":"Fig. 3 a Growth rate of the $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ thin films plotted with respect to the TEG pulse time and plasma time. b Film thickness plotted with respect to the number of applied ALD cycles","id":"train/atomic-layer-deposition/experimental-usecase/36/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/36/fig_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/Huan-Yu Shih et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1319,"height":556,"image_format":"jpeg","image_sha256":"ae4675d5002450c8cc5998bc7497f26f2fe800b17762f8f80f8e6577f6ad7aa9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":17,"y":22,"width":642,"height":533},{"panel_id":"b","x":669,"y":80,"width":649,"height":472}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the growth rate vs plasma time and the growth rate vs TEG pulse time. The growth rate of a material increases with increasing TEG pulse time and plasma time up to a certain point and then plateaus.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the thickness as a function of the number of ALD cycles. The thickness of a material increases linearly with the number of ALD cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TEG pulse time | Growth rate | Plasma time | Growth rate |\\n| --- | --- | --- | --- |\\n| 0.00 | 0.015 | 0 | 0.016 |\\n| 0.05 | 0.06 | 5 | 0.06 |\\n| 0.10 | 0.06 | 10 | 0.06 |\\n| 0.20 | 0.06 | 20 | 0.06 |\"},{\"panel_id\":\"b\",\"text\":\"| ALD cycle (number) | Thickness (nm) |\\n| --- | --- |\\n| 0 | 0 |\\n| 100 | 7 |\\n| 200 | 13 |\\n| 300 | 17 |\\n| 400 | 25 |\\n| 600 | 35 |\\n| 700 | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TEG and O2 plasma.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After 5 s of plasma exposure.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film thickness increases with the number of ALD cycles, in accordance with the ALD process.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_figure_2.jpg","caption":"Figure 2. Elemental depth profiles of the samples with increasing number of $\\mathrm{LiO}^{\\prime}\\mathrm{Bu} - \\mathrm{H}_{2}\\mathrm{O}$ cycles.","id":"train/atomic-layer-deposition/experimental-usecase/38/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/38/figure_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"},{"panel_id":"e","label":"multiple line chart"},{"panel_id":"f","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":983,"height":675,"image_format":"jpeg","image_sha256":"b6b42c35d58106cd65fea698f87aa2f56e6be58ad6e5f7f7fa696ac4ccb8513d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":327,"height":308},{"panel_id":"b","x":329,"y":5,"width":327,"height":319},{"panel_id":"c","x":667,"y":5,"width":312,"height":314},{"panel_id":"d","x":11,"y":372,"width":313,"height":300},{"panel_id":"e","x":347,"y":367,"width":311,"height":305},{"panel_id":"f","x":685,"y":366,"width":293,"height":308}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The depth profile shows oxygen and manganese dominating the near-surface region of the MnO₂ film. Both elements remain fairly constant through most of the film thickness. Silicon rises sharply beyond ~1500 ×10¹⁵ at/cm², marking the substrate interface. No lithium is detected in this pristine sample.\"},{\"panel_id\":\"b\",\"text\":\"After 10 LiO′Bu–H₂O cycles, a small lithium signal appears near the surface. Oxygen and manganese profiles remain similar to pristine MnO₂. Lithium does not penetrate deeply and drops to zero before the Si interface. This suggests early-stage, surface-limited lithiation.\"},{\"panel_id\":\"c\",\"text\":\"With 50 cycles, lithium concentration increases and extends further into the film. The Li profile is still higher near the surface but now reaches deeper compared to 10 cycles. Mn and O remain stable within the film region. The MnO₂ framework appears preserved.\"},{\"panel_id\":\"d\",\"text\":\"At 100 cycles, lithium is clearly incorporated throughout most of the MnO₂ layer. The Li profile becomes flatter inside the film before dropping near the Si interface. Oxygen and manganese concentrations remain relatively unchanged. This indicates a transition toward bulk lithiation.\"},{\"panel_id\":\"e\",\"text\":\"The lithium signal strengthens further and becomes more uniform across the film thickness. Only a slight decrease is seen near the interface region. Mn and O profiles still show no major disruption. Lithiation is no longer confined to the surface.\"},{\"panel_id\":\"f\",\"text\":\"After 300 cycles, lithium shows a high and nearly constant concentration throughout the film. The Li profile closely tracks the MnO₂ layer thickness. Oxygen and manganese remain stable until the Si interface. This panel reflects fully developed bulk lithiation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Depth (×10^15 at/cm^2) | O (at.%) | Mn (at.%) | Si (at.%) | Li (at.%) |\\n|---|---|---|---|---|\\n| 0 | ~0 | ~0 | ~0 | ~0 |\\n| 200 | ~60 | ~38 | ~0 | ~0 |\\n| 500 | ~62 | ~36 | ~0 | ~0 |\\n| 1000 | ~62 | ~34 | ~0 | ~0 |\\n| 1400 | ~55 | ~25 | ~10 | ~0 |\\n| 1600 | ~10 | ~5 | ~80 | ~0 |\\n| 2000 | ~0 | ~0 | ~98 | ~0 |\\n| 2500 | ~0 | ~0 | ~100 | ~0 |\"},{\"panel_id\":\"b\",\"text\":\"| Depth (×10^15 at/cm^2) | O (at.%) | Mn (at.%) | Si (at.%) | Li (at.%) |\\n|---|---|---|---|---|\\n| 0 | ~0 | ~0 | ~0 | ~0 |\\n| 200 | ~60 | ~38 | ~0 | ~1 |\\n| 500 | ~60 | ~36 | ~0 | ~1 |\\n| 1000 | ~58 | ~33 | ~0 | ~1 |\\n| 1400 | ~40 | ~18 | ~20 | ~0 |\\n| 1600 | ~5 | ~2 | ~90 | ~0 |\\n| 2000 | ~0 | ~0 | ~98 | ~0 |\\n| 2500 | ~0 | ~0 | ~100 | ~0 |\"},{\"panel_id\":\"c\",\"text\":\"| Depth (×10^15 at/cm^2) | O (at.%) | Mn (at.%) | Si (at.%) | Li (at.%) |\\n|---|---|---|---|---|\\n| 0 | ~0 | ~0 | ~0 | ~0 |\\n| 200 | ~60 | ~38 | ~0 | ~3 |\\n| 500 | ~60 | ~36 | ~0 | ~3 |\\n| 1000 | ~58 | ~34 | ~0 | ~2 |\\n| 1400 | ~35 | ~15 | ~25 | ~0 |\\n| 1600 | ~5 | ~2 | ~92 | ~0 |\\n| 2000 | ~0 | ~0 | ~98 | ~0 |\\n| 2500 | ~0 | ~0 | ~100 | ~0 |\"},{\"panel_id\":\"d\",\"text\":\"| Depth (×10^15 at/cm^2) | O (at.%) | Mn (at.%) | Si (at.%) | Li (at.%) |\\n|---|---|---|---|---|\\n| 0 | ~0 | ~0 | ~0 | ~0 |\\n| 200 | ~58 | ~36 | ~0 | ~5 |\\n| 500 | ~60 | ~36 | ~0 | ~4 |\\n| 1000 | ~58 | ~33 | ~0 | ~2 |\\n| 1300 | ~45 | ~20 | ~10 | ~0 |\\n| 1500 | ~10 | ~5 | ~80 | ~0 |\\n| 2000 | ~0 | ~0 | ~98 | ~0 |\\n| 2500 | ~0 | ~0 | ~100 | ~0 |\"},{\"panel_id\":\"e\",\"text\":\"| Depth (×10^15 at/cm^2) | O (at.%) | Mn (at.%) | Si (at.%) | Li (at.%) |\\n|---|---|---|---|---|\\n| 0 | ~0 | ~0 | ~0 | ~0 |\\n| 200 | ~55 | ~34 | ~0 | ~10 |\\n| 500 | ~56 | ~32 | ~0 | ~11 |\\n| 1000 | ~56 | ~30 | ~0 | ~9 |\\n| 1400 | ~40 | ~15 | ~15 | ~2 |\\n| 1600 | ~5 | ~2 | ~92 | ~0 |\\n| 2000 | ~0 | ~0 | ~98 | ~0 |\\n| 2500 | ~0 | ~0 | ~100 | ~0 |\"},{\"panel_id\":\"f\",\"text\":\"| Depth (×10^15 at/cm^2) | O (at.%) | Mn (at.%) | Si (at.%) | Li (at.%) |\\n|---|---|---|---|---|\\n| 0 | ~0 | ~0 | ~0 | ~0 |\\n| 200 | ~52 | ~28 | ~0 | ~15 |\\n| 500 | ~52 | ~28 | ~0 | ~16 |\\n| 1000 | ~52 | ~27 | ~0 | ~13 |\\n| 1400 | ~35 | ~12 | ~20 | ~4 |\\n| 1600 | ~5 | ~2 | ~92 | ~0 |\\n| 2000 | ~0 | ~0 | ~98 | ~0 |\\n| 2500 | ~0 | ~0 | ~100 | ~0 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It can be observed that, as the concentration of Li increases, Li can be found deeper in the sample.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The oxygen concentration remains approximately the same for all the samples and it can be found at depths of 1500-2000 x 10^15 at/cm^2.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"No lithiation in pristine MnO₂, Surface-limited lithiation at low cycle numbers (10c–100c), Homogeneous lithiation throughout the film at high cycle numbers (200c–300c)\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface-localized lithium signal suggests that lithium incorporation is favored near the film surface rather than uniformly throughout the bulk. This behavior is consistent with surface-limited incorporation or post-deposition modification effects, rather than bulk diffusion during growth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Only the surface of the film is lithiated. The depth profile shows, that lithium concentration peaks near the surface and drops to neglibly low values at approx. 500x10^15 at/cm². On the other hand, the manganese and oxygene signals extend much deeper (approx. 1500 x10^15 at/cm²), indicating that the bulk of the film consists of pure manganese oxide.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lithium in the top layer rises from 0.6 at.% (10c) to 3.2 at.% (50c) to 9.6 at.% (100c). After 300 cycles, the film becomes stoichiometric LiMn₂O₄.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 50 cycles, lithium penetrates deeper into the MnO₂ film compared to 10 cycles. While the concentration remains highest near the surface, the Li signal now extends further toward the film interior. This reflects a progression from surface-limited to partial bulk lithiation.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It can be observed that, as the concentration of Li increases, Li can be found deeper in the sample.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The oxygen concentration remains approximately the same for all the samples and it can be found at depths of 1500-2000 x 10^15 at/cm^2.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 300cLi-MnO2.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is relatively homogeneous, reaching a concentration of around15 at%. Furthermore, it can be found throughout the bulk of the material.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At low cycle numbers (10-50), lithium penetrates only the surface region. At 100 cycles, Li reaches ~50% of the film depth. Above 100 cycles (200-300), lithium distributes throughout the entire film thickness, enabling stoichiometric LiMn₂O₄ formation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Enables uniform electrochemical activity\\n-Reduces concentration gradients\\n-Improves cycling stability\\n-Enhances charge transport consistency\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The lithium is not evely distributed. Deeper in the film there is less lithium, this could be due to a nucleation delay.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It can be observed that, as the concentration of Li increases, Li can be found deeper in the sample.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The oxygen concentration remains approximately the same for all the samples and it can be found at depths of 1500-2000 x 10^15 at/cm^2.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is relatively homogeneous, reaching a concentration of around15 at%. Furthermore, it can be found throughout the bulk of the material.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 1500 x10^15 at/cm².\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It can be observed that, as the concentration of Li increases, Li can be found deeper in the sample.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The oxygen concentration remains approximately the same for all the samples and it can be found at depths of 1500-2000 x 10^15 at/cm^2.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Homogeneous lithium distribution ensures uniform conversion of MnO₂ into stoichiometric LiMn₂O₄, which is essential for stable electrochemical performance and reproducible material properties.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Oxygen.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In the samples 200cLi−MnO2 and 300cLi−MnO2, lithium is observed to penetrate throughout the whole film thickness.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Partial lithiation creates a layered structure with only the surface enriched in Li. Full lithiation produces a uniform bulk composition. This homogeneity improves mechanical and electrochemical stability.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Depth profiles show very low impurity levels. High purity minimizes side reactions, improves cycling stability, and is essential for achieving high performance and long life in battery cathodes.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At x ≈ 0.5 in LiₓMn₂O₄ (~100 cycles), the crystal structure transforms from tetragonal β-MnO₂ to cubic spinel. The spinel structure has 3D Li⁺ diffusion pathways, enabling lithium to migrate throughout the film rather than being confined to surface channels.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The deposition is performed on a silicon wafer, based on the high silicon contant deeper in the sample. It is likely that the starting surface is thermal silicon oxide.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Lithium.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The depth profiles reveal that lithium is distributed only in the top part of the film in the samples 10cLi−MnO2, 50cLi−MnO2, and 100cLi−MnO2, that is, when the average composition of the material is LixMn2O4, x ≤ 0.5. In the lithiated top parts of the films in these samples, the lithium concentrations were 0.6, 3.2, and 9.6 at. %, respectively.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A weak lithium signal appears near the surface but does not penetrate deeply.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It can be observed that, as the concentration of Li increases, Li can be found deeper in the sample.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The oxygen concentration remains approximately the same for all the samples and it can be found at depths of 1500-2000 x 10^15 at/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There is no lithium incorporation for 10 cycles of lithium deposition, this indicates that there is a delay.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It can be observed that, as the concentration of Li increases, Li can be found deeper in the sample.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The oxygen concentration remains approximately the same for all the samples and it can be found at depths of 1500-2000 x 10^15 at/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the number of LiOtBu–H₂O cycles progressively enhances lithium incorporation into the MnO₂ films. At low cycle numbers, lithium is confined to the near-surface region, while higher cycle numbers enable lithium to penetrate deeper into the film. At 200 and 300 cycles, lithium is distributed throughout the entire film thickness, indicating complete and homogeneous gas-phase lithiation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Across all samples, oxygen and manganese show relatively stable concentration profiles through most of the film thickness, while lithium is more concentrated near the surface and decreases with depth. Silicon concentration increases toward the interface region, indicating proximity to the substrate. The overall depth-dependent trends are similar between samples, with differences primarily in the relative prominence of the lithium signal.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~1:2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"33:66.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.6, 3.2 and 9.6 at.% Li, respectively.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The depth profiles show that at low cycle numbers (10-100 cycles), lithium remains confined to the upper layers of the MnO2 film. This results in compositions of LixMn2O4 with x < 0.5, where the lithium concentrations in the surface region are 0.6-9.6 at.%, depending on cycle count. At higher cycle numbers, specifically 200 and 300 cycles, lithium penetrates through the entire film, indicating complete lithiation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The depth profiles correspond to the following samples\\na. MnO2\\nb. 10cLi-MnO2\\nc. 50cLi-MnO2\\nd. 100cLi-MnO2\\ne. 200cLi-MnO2\\nf. 300cLi-MnO2\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lithium is initially confined to the surface region after 10–100 cycles. It gradually penetrates deeper, achieving full, homogeneous distribution throughout the entire film after 200–300 cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Si signal marks the interface between the MnO₂/LiₓMn₂O₄ film and the Si(100) substrate.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Time-of-flight elastic recoil detection analysis (TOF-ERDA) using ⁷⁹Br⁷⁺ ions from a 5 MV tandem accelerator.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Oxygen and manganese dominate the near-surface region.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The data suggests that the ratio of Mn:O is not 1:2. This means that the film is a mixture of MnO2 and Mn2O3.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_4_fig_2.jpg","caption":"Fig. 2. Thickness profile of selected $\\mathrm{HfO_2}$ films grown from $\\mathrm{Hf[N(CH_3) - }$ $(\\mathrm{C}_2\\mathrm{H}_5)]_4$ and $\\mathrm{H}_2\\mathrm{O}$ on borosilicate glass substrates. Growth temperatures and numbers of growth cycles applied are indicated by labels. Thicknesses are measured at variable distance from the leading edge of the substrate, which is the edge closest to the precursor inlet.","id":"train/atomic-layer-deposition/experimental-usecase/4/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/4/fig_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":636,"height":400,"image_format":"jpeg","image_sha256":"1e3eb18cdf651c650285c8d9708c43da932dfb74f104ecf917c5c9ccf4ffd24e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":633,"height":397}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the thickness of HfO₂ film as a function of distance from the leading edge at various growth temperatures and cycle counts.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| DISTANCE FROM THE LEADING EDGE [mm] | 150 °C, 1000 cycles [nm] | 250 °C, 1500 cycles [nm] | 275 °C, 1500 cycles [nm] | 300 °C, 1500 cycles [nm] | 225 °C, 2500 cycles [nm] |\\n|---|---|---|---|---|---|\\n| 5 | 110 | 140 | 160 | 180 | 210 |\\n| 10 | 110 | 140 | 160 | 180 | 210 |\\n| 15 | 110 | 140 | 160 | 180 | 210 |\\n| 20 | 110 | 140 | 150 | 180 | 200 |\\n| 25 | 100 | 140 | 150 | 170 | 200 |\\n| 30 | 100 | 130 | 150 | 170 | 200 |\\n| 35 | 100 | 130 | 150 | 160 | 200 |\\n| 40 | 100 | 130 | 150 | 160 | 200 |\\n| 45 | 100 | 130 | 150 | 160 | 200 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"150, 225, 250, 275 and 300 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1000 cycles for 150 °C, 1500 cycles for 250, 275 and 300 °C, 2500 cycles for 225 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 5 mm, the film thickness is about 110 nm and at 45 mm, the film thickness is about 100 nm. The total change in thickness is therefore around 10 nm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The samples prepared above 250 °C have a more pronounced difference in thickness compared to the beginning and end of the leading edge. The distance from the leading edge corresponds to how close that part of the film is to the precursor inlet. It is theorised by the authors that above 250 °C, the thermal decomposition of the precursor, which happens at all temperatures, becomes more significant above that temperature. Parts of the film that are closer to the precursor inlet are therefore more likely to be thicker, leading to an additional dependency.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_4_fig_7.jpg","caption":"Fig. 7. Concentrations of hydrogen, carbon, and nitrogen residues versus growth temperature. Lines are guides for the eye.","id":"train/atomic-layer-deposition/experimental-usecase/4/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/4/fig_7","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":556,"height":364,"image_format":"jpeg","image_sha256":"eb750c7c36bf46b73fe6dd9abbc2afd5b1feeb03e366350cf3fe1e6365be0888","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":556,"height":362}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the concentration of hydrogen, carbon, and nitrogen at various HfO₂ growth temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HfO2 GROWTH TEMPERATURE, °C | at.% H | at.% C | at.% N |\\n|---|---|---|---|\\n| 150 | 5 | 0.5 | 0.1 |\\n| 175 | 3 | 0.8 | 0.2 |\\n| 200 | 3 | 0.6 | 0.3 |\\n| 225 | 2.5 | 0.7 | 0.4 |\\n| 250 | 2 | 0.9 | 0.5 |\\n| 275 | 2.5 | 1.1 | 0.6 |\\n| 300 | 2.5 | 1.2 | 0.7 |\\n| 325 | 5 | 1.5 | 0.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 175 and 300 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"From 275 °C on.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"250 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 2 at.%.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_42_figure_1.jpg","caption":"Figure 1. Thermogravimetric analyses and evaporation rates of 1 (black) and 2 (gray) run at $10^{\\circ}\\mathrm{C / min}$ ramp rate, with $10^{\\circ}\\mathrm{C}$ increments for the stepped isotherm used to determine evaporation rate.","id":"train/atomic-layer-deposition/experimental-usecase/42/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/42/figure_1","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/Coyle et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":930,"height":400,"image_format":"jpeg","image_sha256":"9b0cb07188191a4ae89c68a43ea404abc713d6e6ffa937be89db6879ebe82323","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":501,"height":396},{"panel_id":"b","x":491,"y":3,"width":436,"height":395}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Thermogravimetric analyses and evaporation rates of 1 (black) and 2 (gray) run at 10 °C/min ramp rate, with 10 °C increments for the stepped isotherm used to determine evaporation rate. TGA graph shows how much mass is left as Compound 1 is heated. The black trace indicates that all of the compound vaporized cleanly starting at 91 °C, leaving 0% residue by about 150 °C.\"},{\"panel_id\":\"b\",\"text\":\"This label shows the evaporation rate (in nmoles/min) of two compounds (1 in black, 2 in gray) as temperature increases (plotted as 1/T in K⁻¹ × 10³). Both lines are straight and sloping upward,the steeper slope for Compound 1 suggests it has a higher activation energy for evaporation than Compound 2, meaning it is more temperature-sensitive.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| temperature (°C) | mass loss (%) |material |\\n|---|---|---|\\n| 50 | 100 | 1 |\\n| 50 | 100 | 2 |\\n| 100 | 98 | 1 |\\n| 100 | 98 | 2 |\\n| 150 | 92 | 1 |\\n| 150 | 92 | 2 |\\n| 200 | 0 | 1 |\\n| 200 | 20 | 2 |\\n| 250 | 0 | 1 |\\n| 250 | 18 | 2 |\\n| 300 | 0 | 1 |\\n| 300 | 17 | 2 |\\n| 350 | 0 | 1 |\\n| 350 | 15 | 2 |\"},{\"panel_id\":\"b\",\"text\":\"| temperature (1/K x10^3) | evaporation rate (nmol/min) |material |\\n|---|---|---|\\n| 2.25 | 1200 | 1 |\\n| 2.25 | 1100 | 2 |\\n| 2.3 | 1050 | 1 |\\n| 2.3 | 1030 | 2 |\\n| 2.35 | 1000 | 1 |\\n| 2.35 | 800 | 2 |\\n| 2.41 | 800 | 1 |\\n| 2.41 | 600 | 2 |\\n| 2.47 | 600 | 1 |\\n| 2.47 | 500 | 2 |\\n| 2.5 | 500 | 1 |\\n| 2.5 | 300 | 2 |\\n| 2.52 | 300 | 1 |\\n| 2.52 | 150 | 2 |\\n| 2.6 | 150 | 1 |\\n| 2.6 | 100 | 2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TGA measures how much mass is lost as a sample is subject to increased temperature. Thermogravimetric analysis (TGA) showed the onset of volatility at 91 °C and a residual mass of 0%.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Compound 1 vaporized completely with 0% residue, while Compound 2 left 7.4% solid residue, meaning it was less cleanly volatile and likely partially decomposed during heating. Since the mass of copper in 2 comprises 15.72% of the total molecular mass, this compound was possibly undergoing volatilization and decomposition over the thermal range of the TGA.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Because Compound 1’s evaporation rate changes sharply with small temperature changes (steep slope). To keep the vapor supply stable and repeatable for uniform film growth, the precursor temperature must be controlled very accurately (±1 °C or better).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Plotting against 1/T (inverse Kelvin) gives a straight line when evaporation follows the Arrhenius equation. The slope of the line tells us the activation energy for evaporation – a steeper slope (like Compound 1) means evaporation is more sensitive to temperature changes.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_45_figure_1.jpg","caption":"Figure 1. (Color online) Thickness measured by in situ SE as a function of the number of cycles for the $\\mathrm{Pt}$ and $\\mathrm{PtO_2}$ ALD processes. The process conditions are listed in Table I. The starting substrate at 0 cycles was $\\mathrm{Si(100)}$ with $400 \\mathrm{nm} \\mathrm{SiO_2}$ . After 150 cycles of remote plasma ALD, the $\\mathrm{Pt}$ film growth is continued by thermal ALD.","id":"train/atomic-layer-deposition/experimental-usecase/45/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/45/figure_1","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":611,"height":467,"image_format":"jpeg","image_sha256":"e136f2c9af1cd0f9431b4fee3598307cd7cfa973f1ac24eef80baf5a090478c7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":607,"height":464}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the thickness of materials deposited using different ALD methods (Remote plasma ALD Pt, Remote plasma ALD PtO₂, and Thermal ALD Pt) as a function of the number of cycles. Thermal Pt ALD shows no growth unless applied after a Pt seed layer has been formed by remote plasma ALD. The remote plasma processes show near-linear thickness increase after a short initial nucleation period.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample ID | Deposition mode and Material | Number of cycles | Thickness (nm) | \\n|---|---|---|---|\\n| A | Thermal ALD Pt | 0 | 0 |\\n| A | Thermal ALD Pt | 50 | 0.05 |\\n| A | Thermal ALD Pt | 100 | 0.05 |\\n| A | Thermal ALD Pt | 150 | 0.05 |\\n| A | Thermal ALD Pt | 200 | 0.05 |\\n| A | Thermal ALD Pt | 250 | 0.06 |\\n| B | Remote plasma ALD PtO2| 0 | 0 |\\n| B | Remote plasma ALD PtO2| 20 | 0.08 |\\n| B | Remote plasma ALD PtO2| 30 | 0.37 |\\n| B | Remote plasma ALD PtO2| 40 | 0.77 |\\n| B | Remote plasma ALD PtO2| 50 | 1.47 |\\n| B | Remote plasma ALD PtO2| 60 | 2.47 |\\n| B | Remote plasma ALD PtO2| 130 | 4.92 |\\n| B | Remote plasma ALD PtO2| 200 | 7.76 |\\n| B | Remote plasma ALD PtO2| 250 | 9.98 |\\n| C | Remote plasma ALD Pt| 0 | 0 |\\n| C | Remote plasma ALD Pt| 20 | 0.52 |\\n| C | Remote plasma ALD Pt| 40 | 1.43 |\\n| C | Remote plasma ALD Pt| 60 | 2.99 |\\n| C | Remote plasma ALD Pt| 100 | 5.07 |\\n| C | Remote plasma ALD Pt| 150 | 7.23 |\\n| C | Thermal ALD Pt| 160 | 7.45 |\\n| C | Thermal ALD Pt| 200 | 8.97 |\\n| C | Thermal ALD Pt| 250 | 10.89 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After approximately 50 cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the plot, thermal ALD Pt on the initial surface stays essentially at zero thickness over the full cycle range, indicating little to no growth. After 150 cycles of remote plasma ALD Pt, the process is switched to thermal ALD on the same sample and the thickness then increases steadily. This contrast shows that thermal ALD Pt growth proceeds when a Pt surface (seed layer) is present, but not on the starting surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Remote plasma ALD Pt.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After roughly 50 cycles.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_11.jpg","caption":"Fig. 11. Chemical compositions of TiN ALD films measured using XPS techniques. (a) Composition vs. deposition temperature using the short reactant exposure pulse sequence. (b) Composition vs. TDMAT exposure at $180^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_11","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_11","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":547,"height":1152,"image_format":"jpeg","image_sha256":"5402d7ed615a9506cceb32baab8e48bafce4b58a23182d8a5ef0314d519c98ca","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":1,"y":581,"width":541,"height":564},{"panel_id":"a","x":1,"y":0,"width":541,"height":558}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"As deposition temperature increases, oxygen content decreases markedly while nitrogen content increases, whereas titanium remains nearly constant, indicating improved Ti–N formation at higher temperatures. Carbon remains low and only weakly temperature dependent.\"},{\"panel_id\":\"b\",\"text\":\"Increasing TDMAT exposure at 180 °C raises oxygen content and reduces nitrogen content, while titanium stays stable, suggesting that excess precursor exposure promotes oxygen incorporation rather than additional nitridation. Overall, deposition temperature appears to be the dominant parameter governing TiN film stoichiometry.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition Temperature (°C) | O (at.%) | Ti (at.%) | N (at.%) | C (at.%) |\\n|---|---|---|---|---|\\n| ~60 | ~56 | ~31 | ~9 | ~3 |\\n| ~120 | ~44 | ~32 | ~19 | ~5 |\\n| ~180 | ~39 | ~32 | ~23 | ~5 |\\n| ~240 | ~37 | ~33 | ~28 | ~6 |\"},{\"panel_id\":\"b\",\"text\":\"| TDMAT Exposure (s) | O (at.%) | Ti (at.%) | N (at.%) | C (at.%) |\\n|---|---|---|---|---|\\n| 0 | ~40 | ~32 | ~23 | ~5 |\\n| ~20 | ~45 | ~31 | ~18 | ~6 |\\n| ~100 | ~46 | ~31 | ~17 | ~7 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Extended precursor exposure increases surface residence time of reactive species, which can promote unintended oxygen uptake. Rather than enhancing nitridation, excess exposure appears to favor impurity incorporation. This suggests saturation of Ti sites occurs early in the exposure window.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Oxygen content saturates after short TDMAT exposures and remains high at longer exposure times.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The opposing oxygen and nitrogen trends indicate competitive incorporation during growth. As temperature increases, nitrogen more effectively replaces oxygen within the film, promoting Ti–N bonding. This reflects a shift toward a more stoichiometric TiN phase.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher deposition temperatures are most favorable due to lower oxygen and higher nitrogen content.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_12.jpg","caption":"Fig. 12. QCM mass ratios predicted for TiN ALD vs. the number of dimethylamine molecules produced during the TDMAT reaction, $x$ , and the number of dimethylamino ligands incorporated per Ti atom, $y$ .","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_12","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_12","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":667,"height":686,"image_format":"jpeg","image_sha256":"bc9b46e688b773052837b6135c081f2b0faa240bd2da912aa8196f53d5eac890","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":665,"height":681}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents predicted QCM mass ratios for TiN ALD as a function of the number of dimethylamine molecules produced during the TDMAT reaction (x). Each curve corresponds to a different number of dimethylamino ligands retained per Ti atom (y). For all values of y, the QCM mass ratio increases monotonically with x. At a fixed x, higher ligand retention shifts the curves upward, indicating larger net mass uptake. The model therefore highlights the coupled influence of byproduct formation and incomplete ligand removal on QCM signals.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| y (ligand per Ti) | x (approx. range) | QCM mass ratio R (approx.) |\\n|----------------------|-----------------------|--------------------------------------|\\n| 0.0 | ~2.7–3.0 | ~0.60–0.70 |\\n| 0.5 | ~2.1–2.9 | ~0.70–0.90 |\\n| 1.0 | ~1.6–2.7 | ~0.65–1.00 |\\n| 1.5 | ~1.3–2.4 | ~0.75–1.10 |\\n| 2.0 | ~1.0–2.0 | ~0.85–1.15 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Increased production of dimethylamine byproducts during the TDMAT reaction.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It increases the QCM mass ratio.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Retaining more dimethylamino ligands increases the mass remaining on the surface after reaction. This added mass contribution raises the predicted QCM mass ratio for any given amount of dimethylamine production.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_3.jpg","caption":"Fig. 3. Integrated absorbance of $\\mathrm{C - H}$ and $\\mathrm{N - H}$ stretching vibrations vs. TDMAT and $\\mathrm{NH}_3$ exposures at $152^{\\circ}\\mathrm{C}$ . (a) Third TDMAT exposure in ABAB... sequence. (b) Fourth $\\mathrm{NH}_3$ exposure in ABAB... sequence.","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":511,"height":1042,"image_format":"jpeg","image_sha256":"56c206d3ac55af7eff76ac66f732192ac0be3aca21d16ed8d3b85c68076db0df","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":3,"y":535,"width":505,"height":503},{"panel_id":"a","x":3,"y":6,"width":505,"height":508}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure tracks surface functional group evolution during an ABAB… ALD sequence using integrated IR absorbances of C–H and N–H stretching modes at 152 °C. In panel (a), increasing TDMAT exposure causes the N–H signal to rapidly decrease toward zero while the C–H signal rises and approaches saturation, indicating that TDMAT consumption of NHx*-terminated sites is accompanied by accumulation of methyl-containing ligands on the surface.\"},{\"panel_id\":\"b\",\"text\":\"In this figure, increasing NH₃ exposure produces the opposite behavior: N–H absorbance increases and saturates while C–H absorbance decreases and levels off, consistent with NH₃-driven ligand removal and surface re-termination by NHx* species. Together, the two panels demonstrate complementary half-reactions and self-limiting surface chemistry characteristic of ALD cycling.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TDMAT Exposure (Torr·min) | C–H (integrated absorbance) | N–H (integrated absorbance) |\\n|---|---|---|\\n| 0 | ~0.23 | ~1.00 |\\n| 3 | ~0.78 | ~0.25 |\\n| 6 | ~0.88 | ~0.15 |\\n| 10 | ~0.90 | ~0.10 |\\n| 15 | ~0.94 | ~0.06 |\\n| 20 | ~0.95 | ~0.04 |\\n| 25 | ~0.98 | ~0.02 |\\n| 35 | ~1.00 | ~0.01 |\"},{\"panel_id\":\"b\",\"text\":\"| NH₃ Exposure (Torr·min) | C–H (integrated absorbance) | N–H (integrated absorbance) |\\n|---|---|---|\\n| 0 | ~1.00 | ~0.00 |\\n| 500 | ~0.45 | ~0.78 |\\n| 1000 | ~0.38 | ~0.95 |\\n| 1500 | ~0.36 | ~0.95 |\\n| 2000 | ~0.34 | ~0.85 |\\n| 3000 | ~0.34 | ~0.95 |\\n| 3500 | ~0.33 | ~0.98 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies that NH₃ effectively removes methyl-derived ligands and re-terminates the surface with NHx* species. This regeneration of reactive sites is essential for sustaining cyclic ALD growth.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Residual C–H indicates carbon-containing fragments remain on the surface, which can incorporate into the growing film as impurities. Carbon contamination can increase resistivity and degrade barrier performance, so effective NH₃ exposure is critical for high-quality TiN films.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The N–H absorbance decreases most rapidly during the initial TDMAT exposure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Saturation of the C–H signal implies that available reactive surface sites have been fully occupied by methyl-containing ligands. Additional precursor exposure does not increase adsorption, indicating complete surface coverage. This confirms self-limiting precursor chemisorption.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_8.jpg","caption":"Fig. 8. QCM mass ratio, $R = (m_0 + m_1) / m_0$ , measured during TiN ALD using long, medium and short reactant pulse sequences at deposition temperatures of $60 - 240^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_8","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":670,"height":644,"image_format":"jpeg","image_sha256":"7b1f3fe5f9a1ad9d366a84108def0591f22f5c461839c24ce72ea77b4c313574","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":663,"height":643}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This plot shows the QCM mass ratio as a function of deposition temperature for three reactant pulse sequences. The short-pulse sequence remains lowest across the full temperature range (≈0.60 → 0.93), indicating a smaller relative contribution from the NH₃ half-cycle. The medium-pulse sequence starts high at 50 °C, dips near 90 °C, and then increases steadily to ~1.16 at 240 °C. The long-pulse sequence stays near ~0.85–0.95 up to 150 °C and then rises above unity at higher temperatures, reflecting a growing contribution from the second half-reaction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulse sequence | Deposition Temperature (°C) | QCM Mass Ratio R |\\n|---|---|---|\\n| Long (100-10-20-30) | 50 | ~0.88 |\\n| Long (100-10-20-30) | 90 | ~0.84 |\\n| Long (100-10-20-30) | 120 | ~0.84 |\\n| Long (100-10-20-30) | 150 | ~0.92 |\\n| Long (100-10-20-30) | 180 | ~1.02 |\\n| Long (100-10-20-30) | 210 | ~1.07 |\\n| Long (100-10-20-30) | 240 | ~1.11 |\\n| Medium (20-10-6-10) | 50 | ~1.06 |\\n| Medium (20-10-6-10) | 90 | ~0.86 |\\n| Medium (20-10-6-10) | 120 | ~0.88 |\\n| Medium (20-10-6-10) | 150 | ~0.98 |\\n| Medium (20-10-6-10) | 180 | ~1.08 |\\n| Medium (20-10-6-10) | 210 | ~1.14 |\\n| Medium (20-10-6-10) | 240 | ~1.16 |\\n| Short (1-0.5-1-5) | 50 | ~0.60 |\\n| Short (1-0.5-1-5) | 90 | ~0.66 |\\n| Short (1-0.5-1-5) | 120 | ~0.67 |\\n| Short (1-0.5-1-5) | 150 | ~0.70 |\\n| Short (1-0.5-1-5) | 180 | ~0.78 |\\n| Short (1-0.5-1-5) | 210 | ~0.80 |\\n| Short (1-0.5-1-5) | 240 | ~0.93 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Medium (20-10-6-10), R ≈ 1.16.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"180 °C (R ≈ 1.20)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An increasing R indicates that the net mass change after a full cycle grows relative to the precursor-only mass gain. This suggests that the NH₃ half-cycle contributes more strongly at higher temperatures, likely due to more complete ligand removal or enhanced reaction progress.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_9.jpg","caption":"Fig. 9. Resistivities of TiN ALD films measured using the four-point probe for long, medium and short reactant pulse sequences at deposition temperatures of $60 - 240^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_9","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_9","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":661,"height":673,"image_format":"jpeg","image_sha256":"1900f10398e03594987ffddf0793abb20dcec6410b3927286280b01aba4d05a2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":656,"height":667}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows the electrical resistivity of TiN ALD films as a function of deposition temperature. For all pulse lengths, resistivity decreases sharply with increasing temperature. Short pulse sequences consistently yield the lowest resistivity at high temperature. Medium pulses show intermediate behavior, while long pulses retain substantially higher resistivity, especially at lower temperatures. The results indicate that both deposition temperature and pulse timing strongly influence TiN film electrical quality.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulse sequence | Deposition temperature (°C) | Resistivity (µΩ·cm) |\\n|---|---|---|\\n| Short | 60 | ~2.5×10⁷ |\\n| Short | 120 | ~5×10⁶ |\\n| Short | 180 | ~5×10⁴ |\\n| Short | 240 | ~1.5×10⁴ |\\n| Medium | 120 | ~2×10⁷ |\\n| Medium | 180 | ~3×10⁵ |\\n| Medium | 240 | ~2×10⁴ |\\n| Long | 180 | ~1×10⁷ |\\n| Long | 240 | ~3×10⁵ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The short pulse sequence.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It decreases by several orders of magnitude.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Shorter pulses limit excessive precursor exposure and reduce residual ligand incorporation in the growing film. At higher temperatures, this favors cleaner surface reactions, improved film densification, and better grain connectivity. These structural improvements reduce electron scattering and lead to lower resistivity compared with longer pulse sequences.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_50_fig_10.jpg","caption":"Fig. 10 Absorption coefficient $(\\alpha)$ as a function of the photon energy $(E)$ of the ALD ZnO:B films deposited at $150^{\\circ}C$ on glass substrates.","id":"train/atomic-layer-deposition/experimental-usecase/50/fig_10","sample_id":"atomic-layer-deposition/experimental-usecase/50/fig_10","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"table"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/Garcia-Alonso et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":961,"height":367,"image_format":"jpeg","image_sha256":"93c18505542a2e0043ca341569e72583ba73b9acc8aece269e02c9ac15a8c949","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":531,"height":360},{"panel_id":"b","x":531,"y":34,"width":432,"height":327}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the absorption coefficient of ZnO:B as a function of photon energy E, with various doping levels (DF) indicated by different colors, it also highlights the shift in the absorption edge with increasing doping.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| DF | \\\\(\\\\alpha\\\\) \\\\((10^{3} \\\\text{ cm}^{-1})\\\\) @ 1.2 eV | n \\\\((10^{20} \\\\text{ cm}^{-3})\\\\) |\\n| --- | --- | --- |\\n| intrinsic ZnO | 0.41 | 0.13 |\\n| 0.014 | 0.79 | 1.22 |\\n| 0.016 | 0.96 | 1.79 |\\n| 0.018 | 1.50 | 2.25 |\\n| 0.027 | 1.90 | 2.25 |\\n| 0.034 | 2.60 | 3.10 |\\n| 0.053 | 2.66 | 2.70 |\\n| 0.063 | 2.18 | 1.85 |\\n| 0.075 | 1.59 | 1.34 |\\n| 0.094 | 1.39 | 1.08 |\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No. From SE data.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Clearly in the NIR region, the absorption decreases with increasing DF up to 0.034 whereas it increases again for\\nhigher DF values.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The absorption increase in NIR region with increase in doping can be attributed to the free-carrier absorption in the films as described by the Drude model\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The carrier concentration is highest at the following DF,\\n1. At DF 0.034 = 3.1\\n2. At DF 0.053 = 2.7\\nfurther increase of DF does not increase the concentration and hence this is attributed to FCA\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_50_fig_9.jpg","caption":"Fig. 9 Transmittance of selected ZnO:B samples $(\\mathrm{DF} = 0.000 - 0.063)$ deposited at $150^{\\circ}C$ and with thicknesses of $45\\pm 5$ nm.","id":"train/atomic-layer-deposition/experimental-usecase/50/fig_9","sample_id":"atomic-layer-deposition/experimental-usecase/50/fig_9","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/Garcia-Alonso et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":461,"height":344,"image_format":"jpeg","image_sha256":"30ae994cd64be7d5e94a99c6fc8202055aa4e4d77bf9e7f2fe50f5bd451f54ea","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":458,"height":338}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the transmittance of ZnO:B at different wavelengths for various doping fractions. The transmittance increases with increasing wavelength, reaching nearly 100% above 1000 nm.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | Intrinsic ZnO (%) | DF = 0.016 (%) | DF = 0.018 (%) | DF = 0.034 (%) | DF = 0.063 (%) |\\n|-----------------|--------------------|-----------------|-----------------|-----------------|-----------------|\\n| 300 | 40 | 38 | 36 | 34 | 32 |\\n| 400 | 85 | 82 | 80 | 78 | 75 |\\n| 600 | 92 | 90 | 89 | 87 | 85 |\\n| 1000 | 94 | 93 | 92 | 91 | 90 |\\n| 1500 | 95 | 94 | 93 | 92 | 91 |\\n| 2000 | 95 | 94 | 93 | 92 | 91 |\\n| 2400 | 95 | 94 | 93 | 92 | 91 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The transmittance values were over 90% in the major part of the visible region\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A decrease in transmittance was observed in the NIR region with increasing doping fraction until DF = 0.034. For higher DF values, the transmittance in the NIR increased again. This behaviour can be attributed to free-carrier absorption.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A blue shift was observed in the ultraviolet absorption edge with increasing doping concentration from intrinsic ZnO to doped ZnO:B films with a DF of 0.063. This is due to the increase of the optical band gap.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_52_figure_5.jpg","caption":"Figure 5. The imaginary part of the dielectric function $(\\epsilon_{2})$ of the $\\mathrm{Co}_3\\mathrm{O}_4$ , $\\mathrm{Li}_2\\mathrm{CO}_3$ and $\\mathrm{LiCoO_2}$ films as determined by in situ spectroscopic ellipsometry.","id":"train/atomic-layer-deposition/experimental-usecase/52/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/52/figure_5","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/Donders et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":544,"height":375,"image_format":"jpeg","image_sha256":"22b61f796669c9d3188569d8f062a76ac2cae3b54b1de0134a67793ab997a19c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":541,"height":370}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The imaginary part of the dielectric function, epsilon2, is plotted versus photon energy for Co3O4, LiCoO2, and Li2CO3, as determined by in situ spectroscopic ellipsometry. Co3O4 shows the largest epsilon2 values, LiCoO2 is much lower, and Li2CO3 remains near zero across most of the range, indicating very weak contribution compared with the other films.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Photon energy (eV) | Co3O4 (epsilon_2) | LiCoO2 (epsilon_2) | Li2CO3 (epsilon_2) |\\n|---|---|---|---|\\n| 1.25 | 1.2 | 0.15 | 0.00 |\\n| 1.50 | 2.5 | 0.18 | 0.00 |\\n| 1.65 | 5.5 | 0.20 | 0.00 |\\n| 2.00 | 4.1 | 0.25 | 0.00 |\\n| 2.40 | 4.8 | 0.35 | 0.00 |\\n| 2.75 | 6.0 | 0.50 | 0.00 |\\n| 3.10 | 5.2 | 0.70 | 0.00 |\\n| 3.40 | 4.6 | 0.60 | 0.01 |\\n| 3.70 | 4.5 | 0.60 | 0.01 |\\n| 4.00 | 4.7 | 0.75 | 0.02 |\\n| 4.25 | 4.9 | 0.90 | 0.03 |\\n| 4.75 | 5.6 | 1.25 | 0.05 |\\n| 5.00 | 5.8 | 1.20 | 0.06 |\\n| 5.40 | 6.0 | 1.15 | 0.08 |\\n| 5.80 | 5.8 | 1.05 | 0.10 |\\n| 6.00 | 5.4 | 1.00 | 0.12 |\\n| 6.50 | 4.6 | 0.80 | 0.05 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"These reference spectra help distinguish which phases contribute to the optical response measured during growth. The paper notes a clear difference between the three films and uses this comparison to interpret the LiCoO2 signal. In particular, the discussion indicates that Li2CO3 contributes very little to the LiCoO2 epsilon2 spectrum under these conditions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Co3O4\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The x axis is photon energy (eV) and the y axis is the dielectric function epsilon2. Epsilon2 is the imaginary part of the dielectric function and is directly related to optical absorption in the material. Larger epsilon2 values generally indicate stronger absorption at those photon energies.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Co3O4\\n\\nLiCoO2\\n\\nLi2CO3\\nSmallest epsilon2 curve: Li2CO3\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_52_figure_9.jpg","caption":"Figure 9. Constant current (CC) (dis)charge cycling between $3.0\\mathrm{V}$ and $4.1\\mathrm{V}$ (0.35 C-rate) for an ALD-deposited $\\mathrm{LiCoO_2}$ $(x = 4)$ film on $\\mathrm{Si / TiO_2 / Pt}$ , using $\\mathrm{LiClO_4}$ in ethylene carbonate/diethyl carbonate (EC/DEC 1/1) as liquid electrolyte. (a) (dis)charge of $\\mathrm{LiCoO_2}$ , (b) the derivative of the storage capacity with respect to the electrode potential and (c) the electrochemical storage capacity upon cycling showing data for $x = 2$ and $x = 4$ .","id":"train/atomic-layer-deposition/experimental-usecase/52/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/52/figure_9","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/Donders et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":664,"height":1472,"image_format":"jpeg","image_sha256":"8d72921325c02f472d475bc813b27d5f639b96157d2fd6114f0ee7dca8703ba7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":18,"width":624,"height":466},{"panel_id":"b","x":8,"y":487,"width":601,"height":427},{"panel_id":"c","x":3,"y":956,"width":652,"height":464}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Constant current charge and discharge curves of an ALD LiCoO2 film (x = 4) between 3.0 V and 4.1 V versus Li/Li+, plotted as E versus Q. The paper notes an about 12% capacity loss between charge and discharge in this panel.\"},{\"panel_id\":\"b\",\"text\":\"Differential capacity dQ/dE versus E for the same cycling window, showing a clear charge transfer feature near 3.9 V that the paper associates with LiCoO2.\"},{\"panel_id\":\"c\",\"text\":\"Capacity versus cycle number comparing x = 2 and x = 4 films, showing higher capacity for x = 4 and fairly stable cycling behavior over the shown cycles, with areal capacity on the left axis and gravimetric capacity on the right axis.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Q, mAh/g | E (V) vs Li/Li⁺ (Charge) | E (V) vs Li/Li⁺ (Discharge) |\\n|---|---|---|\\n| 5 | 3.20 | 3.00 |\\n| 10 | 3.55 | 3.20 |\\n| 20 | 3.70 | 3.50 |\\n| 40 | 3.85 | 3.70 |\\n| 60 | 3.92 | 3.85 |\\n| 80 | 4.00 | 3.92 |\\n| 95 | 4.15 | 4.00 |\"},{\"panel_id\":\"b\",\"text\":\"| E (V) vs Li/Li⁺ | dQ/dE (mAh/Vg) Charge | dQ/dE (mAh/Vg) Discharge |\\n|---|---|---|\\n| 3.2 | 0 | 0 |\\n| 3.4 | 0 | 0 |\\n| 3.6 | 0.05 | -0.05 |\\n| 3.8 | 0.10 | -0.10 |\\n| 3.9 | 0.35 | -0.40 |\\n| 3.95 | 0.80 | -0.75 |\\n| 4.0 | 0.40 | -0.30 |\\n| 4.05 | 0.20 | -0.15 |\"},{\"panel_id\":\"c\",\"text\":\"| (Dis)charge cycles | Capacity Co/Li (x)=4 (μAh μm⁻¹cm⁻²) | Capacity Co/Li (x)=4 (mAh/g) | Capacity Co/Li (x)=2 (μAh μm⁻¹cm⁻²) | Capacity Co/Li (x)=2 (mAh/g) |\\n|---|---|---|---|---|\\n| 1 | 26 | 95 | 11.5 | 42 |\\n| 2 | 25.5 | 93 | 11.5 | 42 |\\n| 3 | 25 | 92 | 11.5 | 42 |\\n| 5 | 25 | 91 | 11 | 40 |\\n| 7 | 24.5 | 90 | 11 | 40 |\\n| 10 | 24.5 | 89 | 10.5 | 38 |\\n| 12 | 24 | 88 | 10 | 37 |\\n| 14 | 24 | 88 | 10 | 37 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Voltage window: 3.0 V to 4.1 V versus Li/Li+\\n\\nConstant current cycling at 0.35 C rate\\n\\nLiquid electrolyte: LiClO4 in EC/DEC 1/1\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The y axis is dQ/dE (differential capacity) and the x axis is E versus Li/Li+.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A charge transfer reaction at about 3.9 V as expected for LiCoO2.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_54_figure_10.jpg","caption":"Figure 10. (Color online) Cyclic voltammetric scans at $1\\mathrm{mV / s}$ of $60~\\mathrm{nm}$ thick TaN and TiN films showing the reaction of the films toward Li ions.","id":"train/atomic-layer-deposition/experimental-usecase/54/figure_10","sample_id":"atomic-layer-deposition/experimental-usecase/54/figure_10","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":666,"height":503,"image_format":"jpeg","image_sha256":"243c247a4e8cfc531551375547b598e4e318c8e61728a446dcb7e787e57fc199","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":660,"height":499}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows a cyclic voltammetric scan for two different materials, TaN (H₂ plasma) and TiN (H₂-N₂ 30:4 plasma), performed at 1 mV/s.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Potential (V) | Current (µA/cm²) TaN | Current (µA/cm²) TiN |\\n|---|---|---|\\n| 0.0 | -9 | -1 |\\n| 0.5 | -6 | -0.8 |\\n| 1.0 | 0 | -0.5 |\\n| 1.5 | 9 | -0.3 |\\n| 2.0 | 4 | -0.2 |\\n| 2.5 | 0 | -0.1 |\\n| 3.0 | 0 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1 mV/s.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both were 60 nm thick.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0 to 3 V.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TaN films have a much higher current density than TiN, indicating a higher reactivity toward the Li-containing electrolyte.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_54_figure_2.jpg","caption":"Figure 2. (Color online) The thickness of the TaN and TiN films as a function of number of ALD cycles. The thicknesses have been determined by in situ spectroscopic ellipsometry.","id":"train/atomic-layer-deposition/experimental-usecase/54/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/54/figure_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":661,"height":520,"image_format":"jpeg","image_sha256":"ce2b6a506e061c8460b45cb7aeae3e6a89222ec66e860b2f4e1f637d4053d516","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":0,"width":653,"height":516}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between the number of cycles and film thickness for TaN (H₂ plasma) and TiN (H₂-N₂ 30:4 plasma). Both materials exhibit a linear increase in film thickness with increasing cycle count.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of cycles | Film thickness (nm) TaN | Film thickness (nm) TiN |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 50 | 2.5 | 2 |\\n| 100 | 5 | 4 |\\n| 150 | 7 | 6 |\\n| 200 | 10 | 8 |\\n| 250 | 12 | 10 |\\n| 300 | 14.5 | 12 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TaN and TiN.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 7.5 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 14.5 nm.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_54_figure_3.jpg","caption":"Figure 3. (Color online) (a) The growth per cycle and (b) the FPP resistivity of TaN and TiN films as a function of the plasma exposure time in the ALD cycle. The lines serve as guides to the eyes.","id":"train/atomic-layer-deposition/experimental-usecase/54/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/54/figure_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":677,"height":1050,"image_format":"jpeg","image_sha256":"3a0e0bc595cf525066846799183053b1f093cf327441f8a31876d8672e901478","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":-1,"width":675,"height":526},{"panel_id":"b","x":0,"y":535,"width":674,"height":516}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure depicts the growth rate of TiN and TaN films as a function of plasma exposure time, where the growth rate of TiN plateaus after 5 seconds, but the growth rate of TaN keeps increasing after 5 seconds.\"},{\"panel_id\":\"b\",\"text\":\"The figure depicts the FPP resistivity of the TiN and TaN films as a function of plasma exposure time. The resistivity of TiN is practically constant, but the resistivity of TaN decreases exponentially as a function of plasma exposure time.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Plasma exposure time (s) | TaN (H₂ plasma) | TiN (H₂-N₂ 30:4 plasma) |\\n|---|---|---|\\n| 0 | 0.02 | 0.03 |\\n| 5 | 0.03 | 0.04 |\\n| 10 | 0.04 | 0.04 |\\n| 20 | 0.05 | 0.04 |\\n| 30 | 0.06 | 0.04 |\"},{\"panel_id\":\"b\",\"text\":\"| Plasma exposure time (s) | TaN (H₂ plasma) | TiN (H₂-N₂ 30:4 plasma) |\\n|---|---|---|\\n| 0 | 3*10^4 | 2*10^2 |\\n| 5 | 4*10^3 | 2*10^2 |\\n| 10 | 10^3 | 2*10^2 |\\n| 30 | 4*10^2 | 10^2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The growth rates for both species as a function of time increase rapidly during the first few seconds of plasma exposure. The growth rate of TiN quickly plateaus after 5 seconds of exposure, whilst the growth rate of TaN keeps increasing steadily, albeit significantly slower than the initial time exposure.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.04 nm/cycle.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3*10^4 μΩ cm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10^2 μΩ cm.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_54_figure_5.jpg","caption":"Figure 5. (Color online) The sheet resistance at $150^{\\circ}\\mathrm{C}$ of the TaN-Si, TiN-Si, Cu-TaN-Si, and Cu-TiN-Si stacks after heating to the anneal temperature indicated at the horizontal axis. The annealing temperature was increased in steps of $50^{\\circ}\\mathrm{C}$ up to a maximum temperature of $700^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/54/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/54/figure_5","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":675,"height":519,"image_format":"jpeg","image_sha256":"29a9f3a2f7536e26eb5de2f3b3f0cd2b26102f8d9204d573d085930ac18925d3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":671,"height":516}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the sheet resistance at 150°C for different stack configurations (TaN-Si, TiN-Si, Cu-TaN-Si, Cu-TiN-Si) as a function of temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Sheet resistance (Ω/□) TaN-Si stack | Sheet resistance (Ω/□) TiN-Si stack | Sheet resistance (Ω/□) Cu-TaN-Si stack | Sheet resistance (Ω/□) Cu-TiN-Si stack |\\n|---|---|---|---|---|\\n| 150 | 60 | 10 | 0.2 | 0.1 |\\n| 200 | 60 | 10 | 0.2 | 0.1 |\\n| 250 | 60 | 10 | 0.2 | 0.1 |\\n| 300 | 60 | 10 | 0.2 | 0.1 |\\n| 350 | 60 | 10 | 0.2 | 0.1 |\\n| 400 | 60 | 10 | 0.2 | 0.1 |\\n| 450 | 50 | 10 | 0.2 | 0.1 |\\n| 500 | 30 | 9 | 0.2 | 0.1 |\\n| 550 | 20 | 9 | 0.2 | 0.1 |\\n| 600 | 30 | 9 | 0.2 | 0.1 |\\n| 650 | 30 | 8 | 1 | 3 |\\n| 700 | 20 | 7 | 4 | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 10 Ω/\\u0001.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 60 Ω/\\u0001.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 0.2 Ω/\\u0001.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure shows that the TaN–Si stack exhibits a noticeable reduction in sheet resistance once the annealing temperature exceeds roughly 400 °C, indicating an annealing-induced improvement in film quality and demonstrating that TaN maintains thermal stability well above its 225 °C deposition temperature. The TiN–Si stack shows a similar but weaker decrease in resistance, consistent with its higher deposition temperature of 400 °C and thus less room for annealing-driven improvements. In contrast, the Cu–TaN–Si and Cu–TiN–Si stacks initially display very low sheet resistances (approximately 0.2 and 0.1 in the units indicated on the plot), dominated by the highly conductive Cu layer. However, once annealed above about 600 °C, both Cu-containing stacks undergo a dramatic increase in sheet resistance. This sudden rise signals failure of the diffusion barrier; in other words, Cu diffuses into the underlying layers at high temperature, degrading the stack and destroying the low-resistance pathway.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_57_figure_3.jpg","caption":"Figure 3. (a) Transmittance spectra of a $100\\mathrm{nm}$ CsI film on sapphire and bare sapphire substrate. (b) Tauc plot of the CsI film in panel (a). The CsI film was deposited at $150^{\\circ}\\mathrm{C}$ , pulse durations were 1.5 and $0.5\\mathrm{s}$ for Cs and I precursors, respectively, and $1.0\\mathrm{s}$ purge durations.","id":"train/atomic-layer-deposition/experimental-usecase/57/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/57/figure_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/Weia et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1011,"height":356,"image_format":"jpeg","image_sha256":"3e445cf0b31c6f7c70fe545d16b4b38481f4190e81189b03dbb6e38c2b563c22","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":16,"y":10,"width":474,"height":346},{"panel_id":"b","x":514,"y":14,"width":496,"height":342}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the optical characterization of a 100 nm ALD-grown CsI film. The transmittance spectrum indicates that the CsI film (blue) is highly transparent (>80%) across the visible and near-infrared range (300–1100 nm), closely matching the bare sapphire substrate (black), confirming high optical quality with minimal scattering or defect-related absorption. A sharp decrease in transmittance near 225 nm marks the onset of strong fundamental absorption.\"},{\"panel_id\":\"b\",\"text\":\"The Tauc plot (𝛼ℎ𝜈)^2 vs. photon energy shows a linear region, whose extrapolation intersects the energy axis at ~5.5 eV, confirming that CsI is a wide-bandgap insulator with a direct optical bandgap of ~5.5 eV.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | Transmittance (%) | Material |\\n|----------------|-------------------|------|\\n| 200 | 79 | CsI |\\n| 200 | 0 | Sapphire |\\n| 300 | 84 | CsI |\\n| 300 | 81 | Sapphire |\\n| 400 | 84 | CsI |\\n| 400 | 84 | Sapphire |\\n| 500 | 85 | CsI |\\n| 500 | 85 | Sapphire |\\n| 600 | 85 | CsI |\\n| 600 | 85 | Sapphire |\\n| 700 | 85 | CsI |\\n| 700 | 85 | Sapphire |\\n| 800 | 85 | CsI |\\n| 800 | 85 | Sapphire |\\n| 900 | 85 | CsI |\\n| 900 | 85 | Sapphire |\"},{\"panel_id\":\"b\",\"text\":\"| hv (eV) | (αhv)^2 (a.u.) |\\n|----------|-----------------|\\n| 5.0 | 0 |\\n| 5.25 | 0 |\\n| 5.5 | 1E+16 |\\n| 5.62 | 8E+16 |\\n| 5.75 | 3.7E+16 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Blue curve would drop significantly below the Black curve (lower transmittance). Impurities typically act as absorbing centers (darkening the film) or scattering sites. If the film were contaminated, it would appear brownish or cloudy rather than clear.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The critical absorption feature for CsI is at ~225 nm (5.5 eV). Borosilicate glass is opaque in this UV region (cutoff ~300 nm). If used, the substrate itself would absorb all the UV light before the CsI band edge was reached. The spectrometer would measure the glass cutoff (4.0 eV) instead of the CsI bandgap (5.5 eV), yielding false data.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The x-intercept indicates a direct band gap of approximately 5.7 eV. This signifies that the CsI film is a wide-band-gap insulator, where a photon with at least 5.7 eV of energy is required to excite an electron from the valence band to the conduction band.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The high transmittance and sharp cutoff imply it is an excellent solar-blind VUV coating. It would be transparent to wavelengths above its band edge (~220 nm), blocking visible light, while potentially converting shorter VUV photons into detectable electrons via the photoelectric effect, enabling selective VUV sensing.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_57_figure_6.jpg","caption":"Figure 6. (a) Transmittance spectra of the samples made by depositing CsI on a sapphire wafer and then depositing $\\mathrm{PbI}_2$ on CsI. Transmittance spectra of saphire and the as-deposited CsI film are shown for reference. Measurement were made from the center of the sample. (b) Digital photographs of selected samples from panel (a). CsI films were deposited at $150^{\\circ}\\mathrm{C}$ with 300 cycles. The pulse durations were $1.5~\\mathrm{s}$ for $\\mathrm{Cs(btsa)}$ and $1.0~\\mathrm{s}$ for $\\mathrm{SnI_4}$ and purge durations were $1.0~\\mathrm{s}$ . In the $\\mathrm{PbI}_2$ deposition, the durations of the precursor pulses were 0.8 and $2.0~\\mathrm{s}$ for $\\mathrm{Pb(btsa)}_2$ and $\\mathrm{SnI_4}$ , respectively, whereas purge durations were $1.0~\\mathrm{s}$ . The diameter of the sapphire wafers was $5.08~\\mathrm{cm}$ .","id":"train/atomic-layer-deposition/experimental-usecase/57/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/57/figure_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"apparatus diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/Weia et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1008,"height":417,"image_format":"jpeg","image_sha256":"c88b1bfa1cd8c364f1c104bce40aea60149ef4c28fcb93f8b68344f6d1322840","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":1,"width":512,"height":417},{"panel_id":"b","x":520,"y":3,"width":487,"height":413}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates the solid-state reaction between CsI and PbI₂ to form perovskite CsPbI₃ as the number of PbI₂ ALD cycles increases. The CsI film is transparent in the visible region with an absorption edge near 225 nm, while PbI₂ shows an absorption edge at approximately 520 nm. With 2000–3000 PbI₂ cycles (the absorption edge shifts to around 700 nm (1.7–1.8 eV), indicating successful formation of the perovskite phase γ-CsPbI₃.At higher doses (3500–4000 cycles), the perovskite absorption feature weakens and the spectrum increasingly resembles pure PbI₂, indicating complete consumption of CsI and accumulation of excess unreacted PbI₂ on the surface.\"},{\"panel_id\":\"b\",\"text\":\"The image panel shows microscopic images of different materials at various PbI₂ cycle counts.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | Transmittance (%) | Sample |\\n|----------------:|------------------:|----------------------|\\n| 250 | 80 | Sapphire |\\n| 250 | 5 | CsI film |\\n| 250 | 0 | CsI + 2000 PbI₂ cycles |\\n| 250 | 0 | CsI + 2500 PbI₂ cycles |\\n| 250 | 0 | CsI + 3000 PbI₂ cycles |\\n| 250 | 0 | CsI + 3500 PbI₂ cycles |\\n| 250 | 0 | CsI + 4000 PbI₂ cycles |\\n| 250 | 10 | PbI₂ film |\\n| 300 | 83 | Sapphire |\\n| 300 | 75 | CsI film |\\n| 300 | 0 | CsI + 2000 PbI₂ cycles |\\n| 300 | 0 | CsI + 2500 PbI₂ cycles |\\n| 300 | 0 | CsI + 3000 PbI₂ cycles |\\n| 300 | 0 | CsI + 3500 PbI₂ cycles |\\n| 300 | 0 | CsI + 4000 PbI₂ cycles |\\n| 300 | 8 | PbI₂ film |\\n| 350 | 85 | Sapphire |\\n| 350 | 82 | CsI film |\\n| 350 | 0 | CsI + 2000 PbI₂ cycles |\\n| 350 | 0 | CsI + 2500 PbI₂ cycles |\\n| 350 | 0 | CsI + 3000 PbI₂ cycles |\\n| 350 | 0 | CsI + 3500 PbI₂ cycles |\\n| 350 | 5 | CsI + 4000 PbI₂ cycles |\\n| 350 | 6 | PbI₂ film |\\n| 400 | 86 | Sapphire |\\n| 400 | 85 | CsI film |\\n| 400 | 5 | CsI + 2000 PbI₂ cycles |\\n| 400 | 5 | CsI + 2500 PbI₂ cycles |\\n| 400 | 3 | CsI + 3000 PbI₂ cycles |\\n| 400 | 10 | CsI + 3500 PbI₂ cycles |\\n| 400 | 5 | CsI + 4000 PbI₂ cycles |\\n| 400 | 25 | PbI₂ film |\\n| 450 | 86 | Sapphire |\\n| 450 | 86 | CsI film |\\n| 450 | 20 | CsI + 2000 PbI₂ cycles |\\n| 450 | 10 | CsI + 2500 PbI₂ cycles |\\n| 450 | 8 | CsI + 3000 PbI₂ cycles |\\n| 450 | 30 | CsI + 3500 PbI₂ cycles |\\n| 450 | 40 | CsI + 4000 PbI₂ cycles |\\n| 450 | 50 | PbI₂ film |\\n| 500 | 87 | Sapphire |\\n| 500 | 87 | CsI film |\\n| 500 | 35 | CsI + 2000 PbI₂ cycles |\\n| 500 | 25 | CsI + 2500 PbI₂ cycles |\\n| 500 | 20 | CsI + 3000 PbI₂ cycles |\\n| 500 | 45 | CsI + 3500 PbI₂ cycles |\\n| 500 | 60 | CsI + 4000 PbI₂ cycles |\\n| 500 | 65 | PbI₂ film |\\n| 600 | 87 | Sapphire |\\n| 600 | 87 | CsI film |\\n| 600 | 60 | CsI + 2000 PbI₂ cycles |\\n| 600 | 55 | CsI + 2500 PbI₂ cycles |\\n| 600 | 50 | CsI + 3000 PbI₂ cycles |\\n| 600 | 65 | CsI + 3500 PbI₂ cycles |\\n| 600 | 80 | CsI + 4000 PbI₂ cycles |\\n| 600 | 78 | PbI₂ film |\\n| 700 | 88 | Sapphire |\\n| 700 | 88 | CsI film |\\n| 700 | 80 | CsI + 2000 PbI₂ cycles |\\n| 700 | 75 | CsI + 2500 PbI₂ cycles |\\n| 700 | 72 | CsI + 3000 PbI₂ cycles |\\n| 700 | 75 | CsI + 3500 PbI₂ cycles |\\n| 700 | 84 | CsI + 4000 PbI₂ cycles |\\n| 700 | 82 | PbI₂ film |\\n| 900 | 88 | Sapphire |\\n| 900 | 88 | CsI film |\\n| 900 | 87 | CsI + 2000 PbI₂ cycles |\\n| 900 | 85 | CsI + 2500 PbI₂ cycles |\\n| 900 | 83 | CsI + 3000 PbI₂ cycles |\\n| 900 | 85 | CsI + 3500 PbI₂ cycles |\\n| 900 | 88 | CsI + 4000 PbI₂ cycles |\\n| 900 | 86 | PbI₂ film |\"},{\"panel_id\":\"b\",\"text\":\"| | Sapphire | CsI & 3000 PbI2 cyc. | CsI & 3500 PbI2 cyc. | CsI & 4000 PbI2 cyc. |\\n|---|---|---|---|---|\\n| 1 | Sapphire | CsI & 3000 PbI2 cyc. | CsI & 3500 PbI2 cyc. | CsI & 4000 PbI2 cyc. |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The appearance of a strong absorption edge at ~700 nm (the film turns black). Pure CsI is transparent, so this darkening confirms the reaction to form CsPbI₃ .\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3000 cycles (Black) is optimal. It has the strongest absorption. Going to 4000 cycles is worse because the excess PbI₂ layer blocks light (increasing transmittance to 80% at 600 nm), reducing the cell's efficiency.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Excess Lead Iodide ( PbI₂). The curve shape reverting to match the PbI₂ reference indicates that all CsI was consumed and unreacted PbI₂ is now accumulating on top.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Because it would be transparent to visible light. Without the Perovskite phase (which absorbs < 700 nm), the unreacted bilayer lets sunlight pass right through without generating any electricity.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_59_fig_2.jpg","caption":"FIG. 2. (Color online) The imaginary part of the dielectric function $\\epsilon_{2}$ of (a) a conductive, cubic $\\mathrm{TaN}_{x,x\\leqslant 1}$ film and (b) a semiconductive $\\mathrm{Ta}_3\\mathrm{N}_5$ film as deduced from spectroscopic ellipsometry measurements. The dielectric functions are parametrized using (a) a Drude and two Lorentz oscillators and (b) using two Tauc-Lorentz oscillators. The photon energy ranges from the near infrared $(0.75 \\mathrm{eV})$ to the ultraviolet $(6.5 \\mathrm{eV})$ . The conductive $\\mathrm{TaN}_{x,x\\leqslant 1}$ film was deposited using $10 \\mathrm{s} \\mathrm{H}_2$ plasma in the ALD cycle, while the $\\mathrm{Ta}_3\\mathrm{N}_5$ film was deposited using $10 \\mathrm{s} \\mathrm{NH}_3$ plasma.","id":"train/atomic-layer-deposition/experimental-usecase/59/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/59/fig_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/Langereis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"59","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":602,"height":939,"image_format":"jpeg","image_sha256":"25aff3c027bc9a759355bad7af95b6327e06377b8100441ce1022d52532c3cff","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":599,"height":460},{"panel_id":"b","x":0,"y":474,"width":602,"height":461}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the dielectric function ε₂ as a function of photon energy for different models: Drude Lorentz, Drude, Lorentz 1, and Lorentz 2 for the conductive cubic TaN film\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the dielectric function ε₂ as a function of photon energy for different models: Tauc-Lorentz, Tauc-Lorentz 1, and Tauc-Lorentz 2 for the semiconductive Ta3N5 film.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Photon energy (eV) | Drude Lorentz | Drude | Lorentz 1 | Lorentz 2 | \\n|---|---|---|---|---|\\n| 1 | 14 | 8 | 0 | 3 |\\n| 2 | 9 | 3 | 1 | 5 |\\n| 3 | 6 | 2 | 2 | 2 |\\n| 4 | 4 | 1 | 3 | 1 |\\n| 5 | 5 | 0.5 | 4 | 0.5 |\\n| 6 | 6 | 0 | 5.5 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Photon energy (eV) | Tauc-Lorentz | Tauc-Lorentz 1 | Tauc-Lorentz 2 |\\n|---|---|---|---|\\n| 1 | 0 | 0 | 0 | \\n| 2 | 0 | 0 | 0 | \\n| 3 | 1.5 | 1.5 | 0 |\\n| 4 | 6 | 5.5 | 0 |\\n| 5 | 5.8 | 4.5 | 2 |\\n| 6 | 5 | 2 | 3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The imaginary part of the dielectric function, ε₂.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A Drude and two Lorentz oscillators.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Photon energy varies from the near infrared to the ultraviolet.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Similar to the Tauc-Lorentz 1 model, the dielectric constant of the Tauc-Lorentz model increases until around 4 eV and then decreases. However, the Tauc-Lorentz 2 model shows an increase after 4 eV.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_59_fig_3.jpg","caption":"FIG. 3. (Color online) Film thickness as a function of number of remote plasma ALD cycles shown for the growth of cubic $\\mathrm{TaN}_{x,x\\leqslant 1}$ (closed symbols) and $\\mathrm{Ta}_3\\mathrm{N}_5$ (open symbols) as deduced from in situ spectroscopic ellipsometry measurements. The solid lines are linear fits to the data. The cubic $\\mathrm{TaN}_{x,x\\leqslant 1}$ film was deposited using $10\\mathrm{~s~}$ of $\\mathrm{H}_{2}$ plasma in the ALD cycle, while the $\\mathrm{Ta}_3\\mathrm{N}_5$ film was deposited using $10\\mathrm{~s~}$ of $\\mathrm{NH}_3$ plasma.","id":"train/atomic-layer-deposition/experimental-usecase/59/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/59/fig_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/Langereis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"59","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":597,"height":450,"image_format":"jpeg","image_sha256":"91b6ac60b42ea5ca092f8c3b33b31c9e902f6b94e47af7c04b63130aa07be937","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":593,"height":444}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between the number of cycles and film thickness, indicating a linear increase for both TaN x,x⩽1 and Ta3N5.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of cycles | TaN | Ta3N5 |\\n|------------------|--------------------|--------------------|\\n| 0 | 0 | 0 |\\n| 100 | 5 | 6 |\\n| 200 | 10 | 12 |\\n| 300 | 15 | 17 |\\n| 400 | 20 | 15 |\\n| 500 | 25 | 30 |\\n| 600 | 30 | 35 |\\n| 700 | 35 | 40 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Measurements were taken for two films: cubic taN and Ta3N5.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In accordance with an ALD process, the film thickness increases with the number of cycles for both samples.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ta3N5 film is thicker than TaN, because it shows higher film thickness values.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_59_fig_7.jpg","caption":"FIG. 7. (Color online) The imaginary part of the dielectric function $\\epsilon_{2}$ of $\\mathrm{TaN}_x$ films deposited under various plasma conditions in the ALD cycle and as determined by in situ spectroscopic ellipsometry: (1) $30\\mathrm{~s~H}_{2}$ plasma $(x = 0.44)$ , (2) $10\\mathrm{~s~H}_{2}$ plasma $(x = 0.49)$ , (3) $5\\mathrm{~s~H}_{2} - \\mathrm{N}_{2}$ (98:2) plasma $(x = 1.0)$ , (4) $10\\mathrm{~s~H}_{2} - \\mathrm{N}_{2}$ (1:1) plasma $(x = 1.55)$ , and (5) $10\\mathrm{~s~NH}_{3}$ plasma $(x = 1.67)$ . The ratio $x = [\\mathrm{N}] / [\\mathrm{Ta}]$ of the $\\mathrm{TaN}_x$ films was determined by RBS analysis.","id":"train/atomic-layer-deposition/experimental-usecase/59/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/59/fig_7","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/Langereis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"59","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":611,"height":461,"image_format":"jpeg","image_sha256":"84c644ae1f92412411fec023e8f875d9b33248b2ed2efcdaca594d40bee9c518","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":603,"height":459}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart illustrates the dielectric function ε₂ as a function of photon energy (eV). Multiple curves represent different materials and conditions for the TiN ALD cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Photon energy (eV) | 1 | 2 | 3 | 4 | 5 |\\n| --- | --- | --- | --- | --- | --- |\\n| 1 | 30 | 15 | 9 | 1 | 0 |\\n| 2 | 13 | 10 | 9 | 1 | 0 |\\n| 3 | 8 | 5 | 5 | 8 | 1 |\\n| 4 | 7 | 5 | 5 | 10 | 7 |\\n| 5 | 6 | 5 | 5 | 9 | 7 |\\n| 6 | 6 | 6 | 5 | 7 | 6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In-situ spectroscopic ellipsometry.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dielectric function of sample \\\"1\\\" decreases significantly as the photon energy increases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Each film was deposited under different plasma conditions. These conditions could include different exposurre times or plasma gases.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Photon energies varies from the near infrared to the ultraviolet.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_60_85ead34ddeac10d73af92922cd512497aa52e7e6f3abc2a8b4c0729255402d13.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/60/85ead34ddeac10d73af92922cd512497aa52e7e6f3abc2a8b4c0729255402d13","sample_id":"atomic-layer-deposition/experimental-usecase/60/85ead34ddeac10d73af92922cd512497aa52e7e6f3abc2a8b4c0729255402d13","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/85ead34ddeac10d73af92922cd512497aa52e7e6f3abc2a8b4c0729255402d13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/85ead34ddeac10d73af92922cd512497aa52e7e6f3abc2a8b4c0729255402d13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/Zhao et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"60","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"not_found"},"width":902,"height":380,"image_format":"jpeg","image_sha256":"84dfca5a33d60875551ab7efdd394295db503f9d54e5b1d9b429a9b9036d2bb8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":1,"width":416,"height":379},{"panel_id":"b","x":419,"y":1,"width":483,"height":374}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_60_figure_3.jpg","caption":"Figure 3. GPC as a function of substrate temperature.","id":"train/atomic-layer-deposition/experimental-usecase/60/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/60/figure_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/Zhao et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"60","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":470,"height":345,"image_format":"jpeg","image_sha256":"6fafaf3930cdc3a642b74f6fc1ef68fab4bec352adf08d63c71380cc1c851bc5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":7,"width":463,"height":336}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the temperature dependence of the atomic layer deposition growth per cycle (GPC) for Y₂O₃ films using Y(EtCp)₂(iPr-amd) with H₂O, O₂ plasma, and H₂O plasma reactants.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Substrate temperature (°C) | GPC (Å/cycle) | Precursor |\\n|---|---|---|\\n| 119 | 0.0 | Y(EtCp)2(iPr-amd) without reactant |\\n| 151 | 0.0 | Y(EtCp)2(iPr-amd) without reactant |\\n| 180 | 0.0 | Y(EtCp)2(iPr-amd) without reactant |\\n| 200 | 0.1 | Y(EtCp)2(iPr-amd) without reactant |\\n| 220 | 0.1 | Y(EtCp)2(iPr-amd) without reactant |\\n| 250 | 0.1 | Y(EtCp)2(iPr-amd) without reactant |\\n| 280 | 0.2 | Y(EtCp)2(iPr-amd) without reactant |\\n| 300 | 0.3 | Y(EtCp)2(iPr-amd) without reactant |\\n| 320 | 0.5 | Y(EtCp)2(iPr-amd) without reactant |\\n| 350 | 0.6 | Y(EtCp)2(iPr-amd) without reactant |\\n| 380 | 0.8 | Y(EtCp)2(iPr-amd) without reactant |\\n| 120 | 0.6 | H2O |\\n| 149 | 0.7 | H2O |\\n| 179 | 0.8 | H2O |\\n| 199 | 0.8 | H2O |\\n| 220 | 0.8 | H2O |\\n| 250 | 0.8 | H2O |\\n| 279 | 0.9 | H2O |\\n| 300 | 1.0 | H2O |\\n| 320 | 1.1 | H2O |\\n| 349 | 1.3 | H2O |\\n| 380 | 1.4 | H2O |\\n| 120 | 0.7 | O2 plasma |\\n| 149 | 0.8 | O2 plasma |\\n| 180 | 0.8 | O2 plasma |\\n| 200 | 0.9 | O2 plasma |\\n| 220 | 0.9 | O2 plasma |\\n| 251 | 0.9 | O2 plasma |\\n| 279 | 1.0 | O2 plasma |\\n| 298 | 1.2 | O2 plasma |\\n| 319 | 1.2 | O2 plasma |\\n| 349 | 1.4 | O2 plasma |\\n| 380 | 1.5 | O2 plasma |\\n| 120 | 0.8 | H2O plasma |\\n| 149 | 1.0 | H2O plasma |\\n| 180 | 1.0 | H2O plasma |\\n| 201 | 1.1 | H2O plasma |\\n| 220 | 1.1 | H2O plasma |\\n| 250 | 1.1 | H2O plasma |\\n| 280 | 1.2 | H2O plasma |\\n| 300 | 1.3 | H2O plasma |\\n| 320 | 1.4 | H2O plasma |\\n| 350 | 1.6 | H2O plasma |\\n| 381 | 1.7 | H2O plasma |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"150 - 300 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"150 - 300 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, there is clear evidence of thermal decomposition of the yttrium precursor above 300°C. The growth rate for the precursor without any reactant (gray line) begins to rise significantly above this temperature. this indicates self-deposition.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Above 300°C, GPC rises for all tested processes. The systematic increase is most likely caused by the thermal decomposition of the yttrium precursor molecules. This disrupts the self-limiting surface reactions required for ALD, leading to uncontrolled material deposition. This is confirmed by the significant growth observed when pulsing the yttrium precursor without any co-reactant.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_66_figure_4.jpg","caption":"Figure 4. Selected $\\theta_{\\mathrm{Kerr}}$ vs field hysteresis loops for (a) $\\mathrm{ZnO}$ ; (b) oxygen-deficient $\\mathrm{ZnO}$ ; and (c) $\\mathrm{Ni - }$ , (d) $\\mathrm{Co - }$ , and (e) Fe-doped $\\mathrm{ZnO}$ layers. The insets show example curves with large hysteresis and Kerr angle values.","id":"train/atomic-layer-deposition/experimental-usecase/66/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/66/figure_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"},{"panel_id":"e","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/Paskaleva et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"66","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1406,"height":1027,"image_format":"jpeg","image_sha256":"6769e0edc553a67eaf73161f4a17bbce44bafd5f2b7d4c504401e3b9b5b87880","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":518,"height":482},{"panel_id":"b","x":523,"y":1,"width":476,"height":504},{"panel_id":"c","x":6,"y":551,"width":500,"height":472},{"panel_id":"d","x":505,"y":555,"width":451,"height":468},{"panel_id":"e","x":958,"y":557,"width":445,"height":468}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A line chart showing the relationship between magnetic field strength and Kerr rotation angle for undoped ZnO.\"},{\"panel_id\":\"b\",\"text\":\"A line chart showing the relationship between magnetic field strength and Kerr rotation angle for oxygen-deficient ZnO.\"},{\"panel_id\":\"c\",\"text\":\"A line chart showing the relationship between magnetic field strength and Kerr rotation angle for Ni doped ZnO\"},{\"panel_id\":\"d\",\"text\":\"A line chart showing the relationship between magnetic field strength and Kerr rotation angle for Co doiped ZnO.\"},{\"panel_id\":\"e\",\"text\":\"A line chart showing the relationship between magnetic field strength and Kerr rotation angle for Fe doped ZnO.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Magnetic field (Oe) | θ_Kerr (mdeg) |\\n|---|---|\\n|-4000 |-15 |\\n|-3000 |-10 |\\n|-2000 |-5 |\\n|-1000 |0 |\\n|0 |0 |\\n|1000 |5 |\\n|2000 |10 |\\n|3000 |15 |\\n|4000 |20 |\"},{\"panel_id\":\"b\",\"text\":\"| Magnetic field (Oe) | θ_Kerr (mdeg) |\\n|---|---|\\n|-4000 |-15 |\\n|-3000 |-10 |\\n|-2000 |-5 |\\n|-1000 |0 |\\n|0 |0 |\\n|1000 |5 |\\n|2000 |10 |\\n|3000 |15 |\\n|4000 |20 |\"},{\"panel_id\":\"c\",\"text\":\"| Magnetic field (Oe) | θ_Kerr (mdeg) |\\n|---|---|\\n|-4000 |-100 |\\n|-3000 |-80 |\\n|-2000 |-60 |\\n|-1000 |-40 |\\n|0 |0 |\\n|1000 |40 |\\n|2000 |60 |\\n|3000 |80 |\\n|4000 |100 |\"},{\"panel_id\":\"d\",\"text\":\"| Magnetic field (Oe) | θ_Kerr (mdeg) |\\n|---|---|\\n|-4000 |-60 |\\n|-3000 |-50 |\\n|-2000 |-40 |\\n|-1000 |-30 |\\n|0 |0 |\\n|1000 |30 |\\n|2000 |40 |\\n|3000 |50 |\\n|4000 |60 |\"},{\"panel_id\":\"e\",\"text\":\"| Magnetic field (Oe) | θ_Kerr (mdeg) |\\n|---|---|\\n|-4000 |-90 |\\n|-3000 |-70 |\\n|-2000 |-50 |\\n|-1000 |-30 |\\n|0 |0 |\\n|1000 |30 |\\n|2000 |50 |\\n|3000 |70 |\\n|4000 |90 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. For undoped ZnO, θ_Kerr varies from ~-15 mdeg to + 15 mdeg\\n2. For oxygen-deficient ZnO, θ_Kerr varies from ~-15 mdeg to + 15 mdeg\\n3. For Ni-doped ZnO, θ_Kerr varies from ~-100 mdeg to + 100 mdeg\\n4. For Co-doped ZnO, θ_Kerr varies from ~-60 mdeg to + 60 mdeg\\n5. For Fe-doped ZnO, θ_Kerr varies from ~-90 mdeg to + 90 mdeg\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Inhomogeneity is observed for both undoped and TM-doped ZnO layers. The observed complex micro MOKE (diffracted and asymmetrical) hysteresis loops, particularly for the TM-doped samples, reveal the variations and non-uniformity of the MO response. As is seen, these variations are significant in the case of TM-doped layers and for a certain fraction of the measurements shown in the insets with broad hysteresis contours, and θKerr can reach significant values at the maximum applied field.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"MOKE stands for magneto optic kerr effect,\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_7_fig_1.jpg","caption":"Fig. 1. Mass sensor signal as a function of time recorded at temperatures of $100$ and $300^{\\circ}\\mathrm{C}$ during a single ALD cycle. Mass sensor was covered with a buffer layer deposited at $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/7/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/7/fig_1","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/Aarik et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":442,"height":547,"image_format":"jpeg","image_sha256":"3fa369bab6ab2fc3709cc00052557b6a571c305836e02eb7ba6bcfc5139e099a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":441,"height":541}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Real-time mass sensor signal vs. time during a single ALD cycle at growth temperatures of 100C and 300C. The plot defines the specific mass changes: $\\\\Delta m_1$ (gain from TiCl_4 pulse), $\\\\Delta m_2$ (loss during purge/reaction), $\\\\Delta m_2'$ (initial desorption), and $\\\\Delta m_0$ (net mass increment per cycle).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Event | Signal 300°C (Top) | Signal 100°C (Bottom) |\\n|---|---|---|---|\\n| 10 | Start TiCl4 Pulse | ~0 | ~0 |\\n| 12 | End TiCl4 Rise (Δm1) | ~70 | ~60 |\\n| 20 | End TiCl4 Pulse | ~70 | ~60 |\\n| 25 | Start H2O Pulse | ~65 | ~55 |\\n| 26 | Drop (Δm2') | ~35 | ~35 |\\n| 30 | End H2O Pulse | ~35 | ~35 |\\n| 40 | Final Level (Δm0) | ~35 | ~35 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1.300°C\\n, 2. 100°C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the vertical step height labeled Δm1 is clearly larger in the top trace (300°C).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the TiCl₄ pulse, the top trace shows a sharp step increase labeled Δm₁, followed by a plateau while the pulse continues. Around the H₂O pulse, the signal decreases, with the drop region annotated by Δm₂ and Δm₂′. The trace then settles to a lower plateau and finishes the cycle at a baseline shifted upward from the start, labeled Δm₀. Overall, it’s a step-up (TiCl₄) then step-down (H₂O-related) response with a nonzero net offset.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiCl4\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig4.jpg","caption":"FIG.4. Growth profiles for a $200ms$ 20 mTorr precursor dose for different values of the reaction probability $\\beta_{10}$ Higher reaction probabilities lead to steeper growth profiles.","id":"train/atomic-layer-deposition/simulation-usecase/11/fig4","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":672,"height":492,"image_format":"jpeg","image_sha256":"7b61aa4aae946d9a835719b6bdad45f88ae0ad81d8ca3373df170ac93adb2a30","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":663,"height":491}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the surface coverage of a material along the axial position. Different lines represent different reaction probabilities (β10).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Axial position (m) | Coverage (β10 = 0.0001) | Coverage (β10 = 0.0002) | Coverage (β10 = 0.0005 | Coverage (β10 = 0.001) | Coverage (β10 = 0.002) | Coverage (β10 = 0.005) | Coverage (β10 = 0.01) | Coverage (β10 = 0.02) |\\n|---|---|---|---|---|---|---|---|---|\\n| 0.0 | 0.1 | 0.15 | 0.3 | 0.5 | 0.75 | 0.95 | 1 | 1 | \\n| 0.1 | 0.1 | 0.15 | 0.3 | 0.45 | 0.6 | 0.85 | 1 | 1 |\\n| 0.2 | 0.1 | 0.15 | 0.3 | 0.4 | 0.5 | 0.6 | 0.75 | 0.9 |\\n| 0.3 | 0.1 | 0.15 | 0.25 | 0.35 | 0.4 | 0.4 | 0.2 | 0.175 |\\n| 0.4 | 0.1 | 0.15 | 0.25 | 0.3 | 0.3 | 0.2 | 0.1 | 0.05 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200 ms.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"20 mTorr.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The reaction probability (β10).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 4 shows that the reaction probability β₁₀ strongly controls how rapidly surface coverage develops along the reactor, but its effect depends on whether the process is transport-limited or reaction-limited. At relatively high reaction probabilities, decreasing β₁₀ reduces the steepness of the unsaturated growth profile, leading to a more gradual increase in surface coverage without a proportional decrease in the total mass uptake; in this regime, the deposited mass is primarily redistributed spatially within the reactor rather than reduced overall. As β₁₀ is lowered further, the system transitions into a reaction-limited regime, where surface reactions become the bottleneck and the surface coverage decreases directly in proportion to β₁₀.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_10.jpg","caption":"FIG. 10. Reactor growth profiles for a soft-saturating self-limited model with two components (a) $\\beta_{1b} = 10^{-2}$ and $\\beta_{1b} = 10^{-3}$ and (b) $\\beta_{1b} = 10^{-2}$ and $\\beta_{1b} = 10^{-4}$ . All profiles correspond to the same unsaturated dose time of $0.2 \\text{s}$ for an average precursor pressure at the inlet of 50 mTorr. (c) Surface coverage for increasing dose times using (b) conditions.","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_10","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_10","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":661,"height":1322,"image_format":"jpeg","image_sha256":"0fbfdb368d36306bb58667c6136ff196a83da887ed77018b4fa98ba574713ac1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":14,"y":28,"width":618,"height":395},{"panel_id":"b","x":14,"y":457,"width":618,"height":398},{"panel_id":"c","x":14,"y":886,"width":618,"height":436}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the reactor growth profiles for a soft-saturating self-limited model with two components, with β_1a = 10^-2 and β_1b = 10^-3.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the reactor growth profiles for a soft-saturating self-limited model with two components, with β_1a = 10^-2 and β_1b = 10^-4.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the reactor growth profiles with the same conditions as (b), but with four different dose times (t_d).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Axial position (m) | f₂ = 0 | f₂ = 0.1 | f₂ = 0.2 | f₂ = 0.4 | f₂ = 0.6 | f₂ = 0.8 | f₂ = 1 |\\n|---|---|---|---|---|---|---|---|\\n| 0.00 | 1.00 | 0.95 | 0.90 | 0.80 | 0.65 | 0.55 | 0.45 |\\n| 0.10 | 0.98 | 0.92 | 0.88 | 0.75 | 0.60 | 0.50 | 0.40 |\\n| 0.20 | 0.85 | 0.80 | 0.75 | 0.65 | 0.55 | 0.45 | 0.35 |\\n| 0.30 | 0.30 | 0.35 | 0.45 | 0.55 | 0.50 | 0.40 | 0.30 |\\n| 0.40 | 0.05 | 0.10 | 0.15 | 0.30 | 0.35 | 0.30 | 0.25 |\"},{\"panel_id\":\"b\",\"text\":\"| Axial position (m) | f₂ = 0 | f₂ = 0.1 | f₂ = 0.2 | f₂ = 0.4 | f₂ = 0.6 | f₂ = 0.8 | f₂ = 1 |\\n|---|---|---|---|---|---|---|---|\\n| 0.00 | 1.00 | 0.95 | 0.85 | 0.65 | 0.45 | 0.25 | 0.08 |\\n| 0.10 | 0.98 | 0.92 | 0.82 | 0.62 | 0.44 | 0.25 | 0.08 |\\n| 0.20 | 0.90 | 0.85 | 0.75 | 0.60 | 0.43 | 0.25 | 0.08 |\\n| 0.30 | 0.35 | 0.45 | 0.55 | 0.50 | 0.42 | 0.25 | 0.08 |\\n| 0.40 | 0.08 | 0.12 | 0.20 | 0.40 | 0.40 | 0.25 | 0.08 |\"},{\"panel_id\":\"c\",\"text\":\"| Axial position (m) | t_d = 0.2 s | t_d = 0.3 s | t_d = 0.5 s | t_d = 1.0 s |\\n|---|---|---|---|---|\\n| 0.00 | 0.90 | 0.92 | 0.93 | 0.94 |\\n| 0.10 | 0.88 | 0.91 | 0.92 | 0.94 |\\n| 0.20 | 0.75 | 0.90 | 0.92 | 0.94 |\\n| 0.30 | 0.40 | 0.88 | 0.92 | 0.94 |\\n| 0.40 | 0.12 | 0.70 | 0.92 | 0.94 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 0.9.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50 mTorr.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.2 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 10 shows that the presence and relative contribution of a slow self-limited reaction component can substantially alter growth profiles and lead to apparent saturation behaviour that is not fully representative of true surface saturation. When both fast and slow components have relatively high reaction probabilities, increasing the fraction of the slow component produces a gradual transition from a steep, step-like saturation profile to a more gently varying, nearly linear axial coverage profile. When the reaction probability of the slow component is reduced by two orders of magnitude, profiles near the reactor inlet can exhibit a plateau characteristic of saturated growth even though the absolute surface coverage remains well below full saturation. Increasing the dose time in this regime further accentuates this effect: beyond a certain dose duration, the process appears saturated, yet the slow component continues to evolve and yields a small but measurable increase in surface coverage.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_13.jpg","caption":"FIG. 13. Coverage profiles in the presence of competitive adsorption by reaction by-products. (a) Precursor coverage profile for a process characterized by $\\beta_{10} = 10^{-2}$ and $p_0 = 50$ mTorr. (b) By-products coverage profiles for the same conditions used in (a). Note how $\\Theta +\\Theta_{bp} = 1$ indicating that the process is fully saturated. (c) Impact of precursor partial pressure for a process characterized by $\\beta_{10} = 10^{-2}$ and $\\beta_{bp0} = 10^{-3}$","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_13","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_13","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":672,"height":1017,"image_format":"jpeg","image_sha256":"1ee0347ca6012187741c91cb287ec8f7475469165b0538a3b52bbd279d23ead9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":8,"width":662,"height":308},{"panel_id":"b","x":0,"y":352,"width":672,"height":297},{"panel_id":"c","x":18,"y":683,"width":653,"height":333}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the precursor coverage (Precursor cov.) against axial position (m) for different values of $\\\\beta_{bp}$.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the byproduct coverage (Byproduct cov.) against axial position (m) for different values of $\\\\beta_{bp}$.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the precursor coverage against the axial position for different values of precursor partial pressure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Axial position (m) | Precursor cov. $\\\\beta_{bp}$ = 0 | Precursor cov. $\\\\beta_{bp}$ = 0.0001 | Precursor cov. $\\\\beta_{bp}$ = 0.001 | Precursor cov. $\\\\beta_{bp}$ = 0.01 |\\n|---|---|---|---|---|\\n| 0.0 | 1.00 | 1.00 | 1.00 | 0.85 |\\n| 0.1 | 1.00 | 1.00 | 0.95 | 0.75 |\\n| 0.2 | 1.00 | 1.00 | 0.90 | 0.65 |\\n| 0.3 | 1.00 | 1.00 | 0.85 | 0.60 |\\n| 0.4 | 1.00 | 1.00 | 0.80 | 0.50 |\"},{\"panel_id\":\"b\",\"text\":\"| Axial position (m) | Byproduct cov. $\\\\beta_{bp}$ = 0 | Byproduct cov. $\\\\beta_{bp}$ = 0.0001 | Byproduct cov. $\\\\beta_{bp}$ = 0.001 | Byproduct cov. $\\\\beta_{bp}$ = 0.01 |\\n|---|---|---|---|---|\\n| 0.0 | 0.00 | 0.00 | 0.00 | 0.15 |\\n| 0.1 | 0.00 | 0.00 | 0.05 | 0.25 |\\n| 0.2 | 0.00 | 0.00 | 0.10 | 0.35 |\\n| 0.3 | 0.00 | 0.00 | 0.15 | 0.40 |\\n| 0.4 | 0.00 | 0.00 | 0.20 | 0.50 |\"},{\"panel_id\":\"c\",\"text\":\"| Axial position (m) | Precursor cov. 100 mTorr | Precursor cov. 50 mTorr | Precursor cov. 25 mTorr |\\n|---|---|---|---|\\n| 0.0 | 0.98 | 0.98 | 0.98 |\\n| 0.1 | 0.95 | 0.95 | 0.95 |\\n| 0.2 | 0.93 | 0.92 | 0.90 |\\n| 0.3 | 0.93 | 0.89 | 0.85 |\\n| 0.4 | 0.90 | 0.85 | 0.80 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Increasing the precursor pressure reduces the impact of by-product adsorption, leading to weaker axial coverage gradients.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50 mTorr.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"β₁₀ = 10⁻².\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the by-product reaction probability introduces progressively stronger axial gradients in the precursor surface coverage, even though the process is saturated, because adsorbed by-products occupy surface sites and reduce the available precursor coverage according to Θ = 1 − Θ_bp.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_15_fig_6.jpg","caption":"Fig. 6. Predicted energies for the second chlorine loss pathways via hydrolysis (R3a and R3b). The zero is the sum energy of the products of R1a/R1b and water.","id":"train/atomic-layer-deposition/simulation-usecase/15/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/15/fig_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/Chengxing Cui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":650,"height":414,"image_format":"jpeg","image_sha256":"66ed04ec34fcf636f6d50bbae7366f20e88a3b9be05bb0e11e36878fe3825223","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":0,"width":643,"height":412}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a potential energy diagram plotting the energy changes (ΔE) for two reaction pathways (R3a and R3b). The chart compares the pathways through their chemisorption states (CS), transition states (TS) and intermediate physisorption states (PS), revealing that pathway R3a is energetically more favorable than R3b.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|  Reaction coordinate, a.u.| Species Label | ΔE, kJ/mol | \\n| --- | --- | --- |\\n| 1 | CS(R3a) | -64.5 | \\n| 2 | TS(R3a) | 2.2 |\\n| 3 | PS(R3a) | -20.4 |\\n| 4  | Product(R3a) | -11.1 |\\n| 1 | CS(R3b) | -59.7 |\\n| 2 | TS(R3b) | 10.1 |\\n| 3 | PS(R3b) | -12.4 |\\n| 4 | Product(R3b) | 11.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"R3a.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Pathway R3a proceeds faster than pathway R3b. This conclusion is supported by the lower potential energy barrier found at the transition state (TS). The diagram shows that R3a has a barrier at only 2.2 kJ/mol, whereas R3b faces a higher barrier of 10.1 kJ/mol.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Product(R3a) is the more stable product.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Pathway R3b is endothermic.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_14.jpg","caption":"Figure 14: (a) Blue line shows the total density profiles at 0 ALD cycles, red for four ALD cycles, and green for eight ALD cycles with respect to the Z-direction distance of the $\\mathsf{Al}_2\\mathsf{O}_3$ film at $300^{\\circ}C$ [186]. (b) The number density profiles for oxygen (blue), aluminium (green), and hydrogen (red) as a function of the Z-direction distance of $\\mathsf{Al}_2\\mathsf{O}_3$ film at $300^{\\circ}C$ [186].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_14","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_14","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1336,"height":520,"image_format":"jpeg","image_sha256":"defbfb81439cbf309103cf62738af71fbf66bd9447fefb392c80ffd5217f15c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":673,"y":8,"width":658,"height":511},{"panel_id":"a","x":4,"y":8,"width":640,"height":509}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line graph shows the density profiles of an Al₂O₃ film along its thickness (Z-direction) at three stages of ALD: 0 cycles (blue), 4 cycles (red), and 8 cycles (green), all at 300°C. The plot reveals how film density evolves with ALD cycles\"},{\"panel_id\":\"b\",\"text\":\"The graph shows the number density profiles (in atoms/nm³) for Oxygen (O - blue), Aluminum (Al - green), and Hydrogen (H - red) atoms across the thickness (Z-direction) of an Al₂O₃ film deposited at 300°C. The profiles reveal the layered atomic composition of the film: Oxygen and Aluminum densities peak in the main film region (~8–15 Å) where the Al₂O₃ matrix forms, while Hydrogen density is prominent at the film's interfaces, likely indicating surface hydroxyl groups (-OH) or precursor ligands.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Z (Å) | L0 density (g/cm³) | L4 density (g/cm³) | L8 density (g/cm³) |\\n| --- | --- | --- | --- |\\n| 3.0 | 1.10 | 1.10 | 1.10 |\\n| 4.0 | 0.55 | 0.56 | 0.56 |\\n| 5.0 | 0.56 | 0.56 | 0.56 |\\n| 6.0 | 0.80 | 0.85 | 0.85 |\\n| 7.0 | 0.55 | 0.70 | 0.75 |\\n| 8.0 | 0.25 | 0.50 | 0.65 |\\n| 9.0 | 0.05 | 0.30 | 0.55 |\\n| 10.0 | 0.00 | 0.15 | 0.45 |\\n| 11.0 | 0.00 | 0.05 | 0.35 |\\n| 12.0 | 0.00 | 0.02 | 0.28 |\\n| 13.0 | 0.00 | 0.00 | 0.20 |\\n| 14.0 | 0.00 | 0.00 | 0.12 |\\n| 15.0 | 0.00 | 0.00 | 0.05 |\\n| 16.0 | 0.00 | 0.00 | 0.02 |\\n| 17.0 | 0.00 | 0.00 | 0.00 |\"},{\"panel_id\":\"b\",\"text\":\"| Z (Å) | O Number density (nm⁻³) | Al Number density (nm⁻³) | H Number density (nm⁻³) |\\n| --- | --- | --- | --- |\\n| 3.0 | 13.7 | 17.0 | 0.3 |\\n| 4.0 | 14.3 | 3.7 | 0.4 |\\n| 5.0 | 9.4 | 7.7 | 1.3 |\\n| 6.0 | 15.0 | 9.9 | 1.4 |\\n| 7.0 | 12.7 | 7.6 | 2.0 |\\n| 8.0 | 10.1 | 5.8 | 3.04 |\\n| 9.0 | 8.0 | 3.4 | 3.9 |\\n| 10.0 | 4.2 | 1.7 | 3.7 |\\n| 11.0 | 2.6 | 0.76 | 2.4 |\\n| 12.0 | 1.1 | 0.13 | 1.3 |\\n| 13.0 | 0.42 | 0.02 | 0.6 |\\n| 14.0 | 0.10 | 0.00 | 0.05 |\\n| 15.0 | 0.00 | 0.00 | 0.00 |\\n| 16.0 | 0.00 | 0.00 | 0.00 |\\n| 17.0 | 0.00 | 0.00 | 0.00 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An oxygen-enriched surface region is indicated by the sharp O peak at the smallest Z, consistent with terminal oxygen or hydroxyl groups at the outer surface.​​\\n\\nA subsurface region where Al and O peaks overlap suggests a more stoichiometric Al₂O₃ network with coordinated Al–O polyhedra.​​\\n\\nA broader hydrogen profile peaking slightly beyond the main Al region implies surface and near-surface hydroxylation, with hydrogen bonded to oxygen at or just beneath the interface.​​\\n\\nThe decay of all three profiles to near zero at larger Z indicates that the film terminates within the plotted range, with negligible atomic population beyond about 13–14 Å.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Low bulk hydrogen indicates a pure Al₂O₃ lattice with minimal impurity-based charge traps. Hydrogen in oxides can create electronic defects that increase leakage current and reduce dielectric reliability. Therefore, its confinement to the interfaces suggests the functional bulk of the film has high electrical quality.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Initial substrate interface (0 cycles, blue).\\n\\n, Film nucleation and early growth (4 cycles, red).\\n\\n, Thickening and development of a uniform bulk region (8 cycles, green).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The central density is lower and less uniform at 4 cycles, but reaches a stable, high plateau (~1.0 g/cm³) at 8 cycles. The trade-off is between process speed (fewer cycles) and material quality (uniform, dense film). Achieving device-grade films requires more cycles to move past the non-uniform interfacial growth phase.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_21.jpg","caption":"Figure 21: Heat capacity values $(C_{\\mathrm{v}})$ of various size FNPs [161].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_21","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_21","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_21.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_21.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":644,"height":494,"image_format":"jpeg","image_sha256":"c1aeeef03300ca4011c69c4c0f67d75c06df2274ceca9b2d33e7841d56d874ec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":4,"width":636,"height":489}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart represents the Specific heat capacity (Cv) against temperature for various iron nanoparticles (FNP) with the dimensions (2 nm, 2.5 nm, 3.0 nm, 3.5 nm, and 4.0 nm). Sharp peaks were observed at specific temperatures indicating melting points of the respective particles. This graph illustrates the melting point depression phenomenon, where the melting temperature drops significantly (from 2100 K to 1525 K) as the nanoparticle diameter decreases from 4.0 nm to 2.0 nm. It confirms that smaller particles are thermodynamically less stable and undergo phase transitions at lower thermal energies compared to larger ones.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (K) | 2 nm | 2.5 nm | 3.0 nm | 3.5 nm | 4.0 nm |\\n|---|---|---|---|---|---|\\n| 200 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 400 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 600 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 800 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 1000 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 1200 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 1400 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 1525 | 0.4| 0.0 | 0.0 | 0.0 | 0.0 |\\n| 1600 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 1775 | 0.0 | 0.8 | 0.0 | 0.0 | 0.0 |\\n| 1800 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 1925 | 0.0 | 0.0 | 0.9 | 0.0 | 0.0 |\\n| 2000 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 2050 | 0.0 | 0.0 | 0.0 | 0.6 | 0.0 |\\n| 2100 | 0.0 | 0.0 | 0.0 | 0.0 | 1.6 |\\n| 2200 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 2400 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the catalyst must operate at a significantly lower temperature than expected for bulk iron to prevent deactivation. If the process temperature approaches the depressed melting point of the nanoparticles, they will become mobile and rapidly sinter, destroying the high-surface-area catalyst structure. The operational window is constrained by this size-dependent thermal instability.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Larger nanoparticles have a higher melting point. The sharp Cv peak shifts to higher temperatures as diameter increases from 2 nm to 4 nm. The cause is the surface-to-volume ratio: smaller particles have a larger fraction of surface atoms with lower coordination and higher energy, making the entire lattice less stable and melting at a lower temperature.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"2 nm\\n, 2.5 nm\\n, 3.0 nm\\n, 3.5 nm\\n, 4.0 nm\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For computational efficiency in screening, the potential energy method is often preferred. It requires fewer data points to identify the trend break and avoids the extra step of calculating the derivative, saving time for each simulation run.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_2_fig_4.jpg","caption":"Fig. 4. Plot of the changes in selected bond lengths and distances (Hf-Cl, Hf-O, O-H and Cl-H) along the calculated IRC for the elimination of HCl from $\\mathrm{Si(OH)_3 - OH - HfCl_4}$ complex. The adsorbed complex is on the left, products are on the right, and the TS is set to $S = 0$ amu $^{1 / 2}$ bohr.","id":"train/atomic-layer-deposition/simulation-usecase/2/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/2/fig_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/Jie Ren et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":661,"height":511,"image_format":"jpeg","image_sha256":"76d755fe27bd88785d2ef9448a9c1eb783e89ddb3e66242a8cdeea5acfe19f1d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":657,"height":506}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows bond distances (Å) against S((amu)^{1/2}bohr), with four distinct bond types: Hf-Cl, Hf-O, O-H, and Cl-H. Hf-Cl shows a slight increase as the S value increases, while H-O and Cl-H decrease. On the other hand, O-H increases above an S value of -0.5.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| S((amu)^{1/2}bohr) | Hf-Cl | Hf-O | O-H | Cl-H |\\n|---|---|---|---|---|\\n|-2.5 | 2.7 | 2.1 | 1.0 | 2.0 |\\n|-2.0 | 2.7 | 2.1 | 1.0 | 1.9 |\\n|-1.5 | 2.7 | 2.1 | 1.0 | 1.9 |\\n|-1.0 | 2.7 | 2.1 | 1.0 | 1.8 |\\n|-0.5 | 2.8 | 2.1 | 1.1 | 1.7 |\\n|0.0 | 2.8 | 2.1 | 1.4 | 1.5 |\\n|0.5 | 2.8 | 2.1 | 1.6 | 1.4 |\\n|1.0 | 2.8 | 2.0 | 1.7 | 1.3 |\\n|1.5 | 2.8 | 2.0 | 1.9 | 1.3 |\\n|2.0 | 2.8 | 2.0 | 2.0 | 1.3 |\\n|2.5 | 2.9 | 2.0 | 2.1 | 1.3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Changes in bond lenghts are closely related to the transition state (TS).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the S value increases from -2.5 to 2.5, the bond distance decreases for Hf-O and Cl-H, and increases for Hf-Cl and O-H.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Hf-Cl bond has the highest bond distance values close to 2.7 Å.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_25_figure_4.jpg","caption":"Figure 4. ALD simulations. (A) Height of film growth per cycle and (B) roughness per cycle. Present results compared to Hu et al. The range of growth per cycle commonly observed experimentally is highlighted in yellow.","id":"train/atomic-layer-deposition/simulation-usecase/25/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/25/figure_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/Kristopher S. Brown et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1125,"height":439,"image_format":"jpeg","image_sha256":"7f28e01c0cf2e544c4216dcdcb105d531da2545ec697af84729cbcb2ecc2fa54","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":565,"height":434},{"panel_id":"b","x":572,"y":2,"width":549,"height":434}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the film growth per ALD cycle in Å for two studies, comparing the present study simulation (blue) with the results from Hu et al (red) over 12 cycles. The yellow band marks the experimentally reported growth range (~0.9–1.1 Å/cycle).\"},{\"panel_id\":\"b\",\"text\":\"The line chart displays the surface roughness in Å vs. cycle number for two studies, 'Present Study' and 'Hu et al.', over 12 cycles. The roughness from the present study is less rough.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle | Growth per cycle, Å : Present Study | Growth per cycle, Å: Hu et al. |\\n| --- | --- | --- | \\n| 1 | 1.04 | 0.49 |\\n| 2 | 0.88 | 0.48 |\\n| 3 | 0.83 | 0.54 |\\n| 4 | 0.89 | 0.38 |\\n| 5 | 1.06 | 0.48 |\\n| 6 | 0.76 | 0.59 |\\n| 7 | 1.17 | 0.68 |\\n| 8 | 1.17 | 0.46 |\\n| 9 | 1.00 | 0.49 |\\n| 10 | 1.07 | 0.46 |\\n| 11 | 1.19 | 0.57 |\\n| 12 | 0.97 | 0.45 |\"},{\"panel_id\":\"b\",\"text\":\"| Cycle | Surface Roughness, Å: Present Study | Surface Roughness, Å: Hu et al. |\\n| --- | --- | --- | \\n| 1 | 0.78 | 1.4 |\\n| 2 | 1.13 | 1.5 |\\n| 3 | 1.28 | 1.56; 1.66 |\\n| 4 | 1.31 | 1.73 |\\n| 5 | 1.44 | 1.80 |\\n| 6 | 1.33 | 2.0 |\\n| 7 | 1.35 | 2.0 |\\n| 8 | 1.42 | 1.89 |\\n| 9 | 1.44 | 1.89 |\\n| 10 | 1.36 | 1.70 |\\n| 11 | 1.51 | 1.68 |\\n| 12 | 1.58 | 1.65 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Present study (the values are better aligned with experimental ones, shown as yellow band).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The present study shows higher cycle-to-cycle variability. You can see it from the spread of values: for the present study it ranges from 0.76 Å/cycle (cycle 6) up to 1.19 Å/cycle (cycle 11), a spread of about 0.43 Å/cycle. Hu et al. ranges from 0.38 Å/cycle (cycle 4) to 0.68 Å/cycle (cycle 7), a smaller spread of about 0.30 Å/cycle. From one cycle to the next, the present study has a big jump from 0.76 (cycle 6) to 1.17 (cycle 7) (≈ +0.41), whereas the largest step change in Hu et al. is smaller (e.g., 0.68 → 0.46, ≈- 0.22). So overall, the values fluctuate more in the present study.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Present study (the values for roughness are generally lower than in the study of Hu et al.).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They converge overall (the gap between the two data series decreases).\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_25_figure_6.jpg","caption":"Figure 6. Predicted and measured alumina ALD coating growths on an alumina (blue) and silica (red) surface. Predictions are depicted by squares and dotted lines. Measurements of Al added on silica $^{47}$ are depicted by red circles and solid lines. Experimental values for Al added over alumina (blue circles and solid lines) inferred from Puurunen's empirical model, $^{45,46}$ which related the number of Al atoms added to surface OH coverage.","id":"train/atomic-layer-deposition/simulation-usecase/25/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/25/figure_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/Kristopher S. Brown et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":564,"height":452,"image_format":"jpeg","image_sha256":"f5a407a091c127d66cc06e86c5cb3ed5aded9b8b5e6a58cd66b97f46ad9482a9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":560,"height":448}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the number of Al atoms added per unit area (Al/nm²) over cycles for both Al2O3 experiment and model, and SiO2 experiment and model. The Al2O3 experiment and model exhibit a more similar trend, while the SiO2 experiment and model deviate more from each other.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle | Al2O3 Experiment | SiO2 Experiment | Al2O3 Model | SiO2 Model |\\n|---|---|---|---|---|\\n| 1 | 2.5 | 4.5 | 2.8 | 2.4 |\\n| 2 | 3.2 | 2.4 | 3.4 | 2.4 |\\n| 3 | 3.4 | 2.7 | 3.2 | 2.1 |\\n| 4 | 3.2 |- | 3.4 | 2.4 |\\n| 5 | 3.6 | - | 3.9 | 2.6 |\\n| 6 | 3.3 | 2.9 | 3.7 | 2.5 |\\n| 7 | 3.3 | - | 3.7 | 2.7 |\\n| 8 | 3.4 | 3.2 | 4.1 | 2.9 |\\n| 9 | 3.4 | - | 3.9 | 3.0 |\\n| 10 | 3.3 | - | 3.9 | 3.1 |\\n| 11 | - | 3.8 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Al2O3 model generally overestimates the predicted values of added Al atoms.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiO2 model generally underestimates the predicted values of added Al atoms.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Considering only the experimental data from cycles 1–3, SiO₂ has the greater total Al atoms deposited per area. Even though its rate drops in cycles 2 and 3, the initial deposition of 4.5 Al/nm² in Cycle 1 outweighs the steady but lower start of the Al₂O₃ surface. Summing those cycles gives SiO₂ = 4.5 + 2.4 + 2.7 = 9.6, while Al₂O₃ = 2.5 + 3.2 + 3.4 = 9.1.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_25_figure_7.jpg","caption":"Figure 7. CLD simulations. (A) Cumulative height growth and (B) roughness per cycle.","id":"train/atomic-layer-deposition/simulation-usecase/25/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/25/figure_7","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/Kristopher S. Brown et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":995,"height":325,"image_format":"jpeg","image_sha256":"53961ccd7e23d3eeafbc5a5ac870874c0ee15308bdf7ade0fb1a4b0f59e2691a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":509,"height":322},{"panel_id":"b","x":519,"y":0,"width":472,"height":323}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the growth per cycle for two methods, CLD (blue) and ALD (red), over ten cycles. CLD growth is less uniform than ALD under the conditions shown.\"},{\"panel_id\":\"b\",\"text\":\"The line chart displays the surface roughness for two methods, CLD and ALD, over cycles. CLD (blue) exhibits a progressive roughening trend, ALD (red) remains roughly constant .\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle | Growth per cycle, A: ALD | Growth per cycle, A: CLD |\\n|---|---|---|\\n| 1 | 1.0 | 0.2 |\\n| 2 | 0.9 | 0.9 |\\n| 3 | 0.8 | 1.5 |\\n| 4 | 0.9 | 0.2 |\\n| 5 | 1.1 | 1.0 |\\n| 6 | 0.8 | -0.8 |\\n| 7 | 1.1 | 0.5 |\\n| 8 | 1.1 | 4.7 |\\n| 9 | 0.9 | 0.4 |\\n| 10 | 1.1 | 1.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Cycle | Surface Roughness, A: ALD| Surface Roughness, A: CLD|\\n|---|---|---|\\n| 0 | - | 0.7 |\\n| 1 | 0.8 | 1.2 |\\n| 2 | 1.1 | 2.2 |\\n| 3 | 1.2 | 3.5 |\\n| 4 | 1.3 | 3.8 |\\n| 5 | 1.5 | 5.0 |\\n| 6 | 1.3 | 3.7 |\\n| 7 | 1.2 | 4.2 |\\n| 8 | 1.4 | 8.5 |\\n| 9 | 1.4 | 7.3 |\\n| 10 | 1.3 | 8.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The CLD process eventually switches from deposition to etching mode. The growth per cycle for CLD drops below zero at cycle 6, indicating a negative growth rate. A negative value for growth per cycle physically means the removal of material from the surface rather than addition.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ALD (GPC remains roughly constant).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ALD (surface roughness is relatively constant).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ALD (surface roughness is lower).\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_25_figure_8.jpg","caption":"Figure 8. Effect of different injection stoichiometries. (A) Cumulative height growth per cycle and (B) roughness per cycle. Blue: base case. Red: half amount of water injected per cycle.","id":"train/atomic-layer-deposition/simulation-usecase/25/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/25/figure_8","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/Kristopher S. Brown et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":986,"height":347,"image_format":"jpeg","image_sha256":"176d23f8cc67aee84c18387b5ab1e29898052e19146dbb289a09c646d2bfd722","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":1,"width":476,"height":345},{"panel_id":"b","x":497,"y":2,"width":487,"height":342}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the growth per cycle over 10 cycles for two conditions: the base case and a process using half the H₂O injected per cycle. The base case remains low and fairly steady. In contrast, halving the H₂O dose produces highly unstable growth, with large cycle-to-cycle fluctuations.\"},{\"panel_id\":\"b\",\"text\":\"The chart illustrates the surface roughness over 10 cycles for two conditions: the base case and a process using half the H₂O injected per cycle. The base case remains relatively smooth, showing a slow increase in roughness over cycling. The half-H₂O condition exhibits significant increases in surface roughness.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle | Growth per cycle, Å (Base case) | Growth per cycle, Å (Half H₂O amount injected per cycle) |\\n|---|---|---|\\n| 1 | 0.98 | 3.07 |\\n| 2 | 1.22 | 5.64 |\\n| 3 | 1.96 | 2.57 |\\n| 4 | 0.98 | 18.77 |\\n| 5 | 1.59 | 25.15 |\\n| 6 | 0 | 3.31 |\\n| 7 | 1.22 | 47.8 |\\n| 8 | 5.27 | 9.44 |\\n| 9 | 0.85 | 3.55 |\\n| 10 | 1.47 | 32.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Cycle | Surface Roughness, Å (Base case) | Surface Roughness, Å (Half H₂O amount injected per cycle) |\\n|---|---|---|\\n| 0 | 1.17 | 1.17 |\\n| 1 | 1.76 | 4.5 |\\n| 2 | 2.35 | 10 |\\n| 3 | 4.11 | 12.35 |\\n| 4 | 4.51 | 29.01 |\\n| 5 | 5.49 | 38.23 |\\n| 6 | 3.72 | 43.13 |\\n| 7 | 4.51 | 67.84 |\\n| 8 | 8.63 | 64.90 |\\n| 9 | 7.45 | 67.25 |\\n| 10 | 8.43 | 72.15 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Halving the H₂O dose makes the growth much less stable from cycle to cycle. In the base case, the growth per cycle stays low and fairly consistent, with only small fluctuations across the 10 cycles. With half H₂O, the growth becomes unstable, showing large swings. So the reduced H₂O dose breaks the steady, repeatable growth behavior.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To obtain smooth films, the base-case (stoichiometric) dosing should be selected. The base case maintains a consistently low surface roughness (below 10 Å ) throughout the sequence. By contrast, the half-H₂O condition exhibits a rapid and substantial increase in roughness, reaching over 70 Å by the end of the measurement. Overall, this behavior is consistent with the development of a rough surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Using substoichiometric (insufficient) amounts of H₂O leads to surface roughening.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_11.jpg","caption":"Figure 11. Coverage (\\%) versus rotation speed (rad/s) for (a) Hacac step, (b) BDEAS step, and (c) ozone step. $x_{A}$ , $x_{B}$ , and $x_{C}$ represents the mole fraction of Hacac, BDEAS, and ozone, respectively.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_11","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_11","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1058,"height":906,"image_format":"jpeg","image_sha256":"ff4736023581f073bdff3e17588470107b22883f6601c3ba0a35027261eb65ec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":9,"width":500,"height":388},{"panel_id":"b","x":550,"y":9,"width":507,"height":393},{"panel_id":"c","x":273,"y":480,"width":508,"height":382}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Hacac surface coverage (%) as a function of wafer rotation speed at different reactant mole fractions, showing a general decrease with increasing rotation speed. Coverage remains nearly full at low speeds even for lower mole fractions.\"},{\"panel_id\":\"b\",\"text\":\"BDEAS surface coverage (%) as a function of wafer rotation speed at different reactant mole fractions, showing sharper decreases at higher rotation speeds due to its noncompetitive kinetic mechanism, producing steeper and somewhat discontinuous curves.\"},{\"panel_id\":\"c\",\"text\":\"Ozone surface coverage (%) as a function of wafer rotation speed at different reactant mole fractions, generally decreasing with increasing rotation speed, with nearly full coverage at low speeds even for lower mole fractions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Rotation speed (rad/s)|xHacac = 0.05|xHacac = 0.1|xHacac = 0.3|\\n|-----------------------|-------------|------------|------------|\\n|0.2|100|100|100|\\n|0.3|98.8|99.5|100|\\n|0.4|97.5|98.7|100|\\n|0.5|96.2|97.8|99.5|\\n|0.6|95.1|96.5|100|\\n|0.7|94.0|95.2|99.8|\\n|0.8|92.8|94.0|99.5|\"},{\"panel_id\":\"b\",\"text\":\"| Rotation speed (rad/s)|xBDEAS = 0.05|xBDEAS = 0.1|xBDEAS = 0.3|\\n|-----------------------|-------------|------------|------------|\\n|0.2|100|100|100|\\n|0.3|97.5|98.5|100|\\n|0.4|95.0|97.0|99.2|\\n|0.5|92.0|95.0|98.0|\\n|0.6|89.5|93.0|97.5|\\n|0.7|87.0|91.5|97.0|\\n|0.8|85.0|90.0|96.5|\"},{\"panel_id\":\"c\",\"text\":\"| Rotation speed (rad/s)|xO3 = 0.05|xO3 = 0.1|xO3 = 0.3|\\n|-----------------------|----------|---------|---------|\\n|0.2|100|100|100|\\n|0.3|98.8|99.5|100|\\n|0.4|97.5|98.7|100|\\n|0.5|96.2|97.8|99.5|\\n|0.6|95.1|96.5|100|\\n|0.7|94.0|95.2|99.8|\\n|0.8|92.8|94.0|99.5|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The coverage versus rotation speed data helps identify optimal operating conditions for the ASALD process. By selecting lower rotation speeds or higher reagent mole fractions, full surface coverage can be achieved for Hacac, BDEAS, and ozone steps. Understanding the steep coverage decrease for BDEAS allows engineers to adjust the mole fraction or rotation speed to avoid incomplete coverage. These insights ensure uniform thin film deposition, efficient reagent use, and controlled reaction kinetics, which are critical for producing high-quality films with predictable thickness and surface properties.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The BDEAS step shows the steepest decrease in coverage, attributed to its noncompetitive kinetic mechanism.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Higher rotation speeds decrease the exposure time of the wafer to the reagents, resulting in lower surface coverage.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Wafer rotation speed (lower speeds increase coverage), Mole fraction of the reagent (higher mole fractions increase coverage), Kinetic mechanism of the reaction (e.g., noncompetitive behavior of BDEAS), Exposure time of the wafer to the reagent\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_11.jpg","caption":"Figure 11. Energetics for the bound reactants (BR), transition state (TS), bound products (BP) and unbound products (UP) relative to the unbound reactants (UR) for the reaction of $\\mathrm{SiH}_2(\\mathrm{NH}_2)_2$ (triangles, dashed lines), $\\mathrm{SiH}_2\\mathrm{DMA}_2$ (squares, solid lines) with the cluster models $(\\mathrm{Si}_3\\mathrm{N}_4)_4(\\mathrm{NH}_3)_{12}$ (red) and $(\\mathrm{Si}_3\\mathrm{N}_4)_4(\\mathrm{H}_2\\mathrm{O})_{12}$ (green). The table inset presents the $E_{\\mathrm{act}}$ values for the precursors with the $\\mathrm{NH}_2$ and OH covered surfaces. $\\Delta E$ values are given in $\\mathrm{kJ / mol}$ and were determined from BP86/SV(P) DFT calculations.","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_11","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_11","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":670,"height":497,"image_format":"jpeg","image_sha256":"f3508ff53dc22c869775ead69ef7bd79099d9c9bf2f24f14eb43883fcfa8a8cc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":664,"height":492}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the energy changes ($\\\\Delta E$ in kJ/mol) for two compounds, SiH2(NH2)2 and SiH2DMA2, across four stages: UR, BR, TS, BP, and UP. The chart also includes surface types (NH2 and OH) for comparison.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Step | SiH₂(NH₂)₂ on NH₂ Surface | SiH₂DMA₂ on NH₂ Surface | SiH₂(NH₂)₂ on OH Surface | SiH₂DMA₂ on OH Surface |\\n|------|---------------------------|--------------------------|---------------------------|--------------------------|\\n| UR | 0 | 0 | 0 | 0 |\\n| BR | -10 | -30 | -65 | -50 |\\n| TS | +70 | +70 | +10 | 0 |\\n| BP | 20 | 20 | -30 | -80 |\\n| UP | 5 | 5 | -90 | -50 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The activation energies for the precursors are as follows\\n1. SiH₂(NH₂)₂ on NH₂ Surface = 98.29 kJ/mol\\n2. SiH₂(NH₂)₂ on OH Surface = 79.13 kJ/mol\\n3. SiH₂DMA₂ on NH₂ Surface = 79.97 kJ/mol\\n4. SiH₂DMA₂ on OH Surface = 51.74 kJ/mol\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The larger steric interactions experienced by SiH2DMA2 with the amine-covered surface compared with the hydroxyl-covered surface destabilize BR. The same steric interactions explain the weaker adsorption by SiH2DMA2 relative to SiH2(NH2)2 on both substrates\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The higher energy of BR reflects a reduced bond strength of the precursor to the surface. This may increase the probability of the precursor returning unreacted to the gas phase at ALD temperatures and may prevent the remaining reaction steps occurring. This initial BR step is therefore crucial in determining the deposition rate of a\\nprecursor and was chosen as a metric for ALD reactivity of other potential precursors.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Overall, SiH₂(NH₂)₂ and SiH₂DMA₂ on NH₂ Surface have higher energy for all the states compared to OH surface\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_6.jpg","caption":"Figure 6. $\\Delta E$ for the hydrolysis $\\mathrm{(YH = H_2O)}$ and amination $\\mathrm{(YH =}$ $\\mathrm{NH_3}$ ) of various silicon precursors calculated using eqs 1a and 1b from BP86/TZVPP total energies.","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":661,"height":502,"image_format":"jpeg","image_sha256":"6b6043be3c97e6ceb854c5dfac75a54805d0742486eabe502b80192f78bfe65e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":657,"height":500}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure plots the change in energy (ΔE) in kJ/mol for various compounds when interacting with H2O and NH3.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Precursor | ΔE (kJ/mol) with H₂O | ΔE (kJ/mol) with NH₃ |\\n|------------------|------------------------|------------------------|\\n| SiH₂Cl₂ | 0 | +45 |\\n| SiH₂DMA₂ | -30 | 0 |\\n| SiH₂HFMA₂ | -60 | -20 |\\n| SiH₂EMA₂ | -50 | 0 |\\n| BDEAS | -55 | -2 |\\n| BTBAS | -60 | -10 |\\n| SiH₂CH₃ | -110 | -70 |\\n| SiH₄ | -80 | -30 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ΔEhyd was significantly more negative than ΔEamin by 47.14 kJ/mol. This value |ΔE| corresponds to the reaction SiH2(NH2)2 + 2H2O ↔ SiH2(OH)2 + 2NH3).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The difference ΔE between hydration and amination means that functional group elimination from difunctionalized silane precursors is thermodynamically more favorable on OH covered SiO2 surfaces than on NH2/NH-covered Si3N4 surfaces. This appears to correlate with the much slower ALD growth rates for silicon nitride compared with silicon dioxide.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. SiH₂Cl₂ \\n2. SiH₂DMA₂ \\n3. SiH₂HFMA₂ \\n4. SiH₂EMA₂ \\n5. BDEAS \\n6. BTBAS \\n7. SiH₂CH₃ \\n8. SiH₄\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_8.jpg","caption":"Figure 8. Energetics for the bound reactants (BR), transition state (TS), bound products (BP) and unbound products (UP) relative to the unbound reactants (UR) for the reaction of (a) $\\mathrm{SiH}_2(\\mathrm{NH}_2)_2$ and (b) $\\mathrm{SiH}_2\\mathrm{DMA}_2$ precursor with the surface group models $\\mathrm{SiH}_3\\mathrm{-OH}$ (red diamonds), $\\mathrm{SiH}_3\\mathrm{-NH}_2$ (green squares), and $\\mathrm{SiH}_3\\mathrm{-NH - SiH}_3$ (blue triangles). $\\Delta E$ values are given in $\\mathrm{kJ / mol}$ and were determined using BP86/SV(P) DFT calculations.","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_8","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":672,"height":458,"image_format":"jpeg","image_sha256":"03233352f6788668f7bf9ed6569b5e68946b530baaf5fa095e66b178171bebe6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":0,"width":370,"height":458},{"panel_id":"b","x":367,"y":0,"width":300,"height":456}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart displays changes in ΔE (kJ/mol) for SiH2(NH2)2 on surface of three different species (SiH3-OH, SiH3-NH2, SiH3-NH-SiH3) across five states (UR, BR, TS, BP, UP).\"},{\"panel_id\":\"b\",\"text\":\"The line chart shows changes in ΔE (kJ/mol) for SiH2DMA2 precursor on surface of three different species (SiH3-OH, SiH3-NH2, SiH3-NH-SiH3) across five states (UR, BR, TS, BP, UP).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Step | SiH₃–OH | SiH₃–NH₂ | SiH₃–NH–SiH₃ |\\n|------|---------|----------|--------------|\\n| UR | 0 | 0 | 0 |\\n| BR | -40 | -20 | -15 |\\n| TS | +80 | +60 | +70 |\\n| BP | -60 | -30 | -25 |\\n| UP | -80 | -10 | -5 |\"},{\"panel_id\":\"b\",\"text\":\"| Step | SiH₃–OH | SiH₃–NH₂ | SiH₃–NH–SiH₃ |\\n|------|---------|----------|--------------|\\n| UR | 0 | 0 | 0 |\\n| BR | -35 | -18 | -15 |\\n| TS | +75 | +55 | +65 |\\n| BP | -55 | -28 | -25 |\\n| UP | -75 | -12 | -8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reactions leading to BR, BP and UP (optimized to local minima) on the SiH3−OH model surface were calculated to be more exothermic than those on the SiH3−NH2 and SiH3−NH−SiH3 systems, consistent with the results of the thermodynamic model\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"These calculations ignored temperature effects that may reduce the significance of these energy differences.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ΔE values for the SiH3−NH2 and SiH3−NH−SiH3 models were almost identical, indicating the similar chemistry of primary (NH2) and secondary (NH) amine\\ngroups. The transition state energy barriers or activation energies for SiH2(NH2)2 and SiH2DMA2 are quite similar to Eact for both precursors, with the SiH3−OH substrate lower than with SiH3−NH2/SiH3−NH−SiH3 substrates.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_10.jpg","caption":"Figure 10. The evolution of the growth rate during the $\\mathrm{Al}_2\\mathrm{O}_3$ ALD starting with two different initial $-\\mathrm{OH}$ concentrations at $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_10","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":633,"height":567,"image_format":"jpeg","image_sha256":"a08b54146b90f05f2ab9da5f67e697a503619e712774d06376f2104107a67b7f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":6,"width":625,"height":558}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Growth per cycle is plotted against ALD cycles. Higher initial OH gives higher growth from the start. Lower OH shows slow early growth and gradual increase.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycles | Growth per cycle (Å), H: 6% | Growth per cycle (Å), H: 0.5% |\\n|---|---|---|\\n| 1 | ~0.50 | ~0.10 |\\n| 2 | ~0.50 | ~0.10 |\\n| 3 | ~0.55 | ~0.15 |\\n| 4 | ~0.40 | ~0.15 |\\n| 5 | ~0.50 | ~0.20 |\\n| 6 | ~0.60 | ~0.20 |\\n| 7 | ~0.70 | ~0.30 |\\n| 8 | ~0.46 | ~0.40 |\\n| 9 | ~0.50 | ~0.30 |\\n| 10 | ~0.46 | ~0.45 |\\n| 11 | ~0.56 | ~0.30 |\\n| 12 | ~0.46 | ~0.40 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Fewer OH groups limit precursor adsorption in early cycles. Reactive sites must form gradually through repeated ALD reactions. Thus, low initial OH lead to suppressed early-cycle growth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 6% OH condition.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies a higher density of reactive OH sites. More sites allow more precursor reactions per cycle, increasing growth efficiency.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure indicates that increasing or stabilizing initial OH coverage can reduce incubation effects and improve early-cycle growth uniformity. Process steps such as surface pre-treatment or controlled exposure conditions could be used to achieve this. Understanding the cycle-dependent fluctuations also helps in selecting suitable cycle counts to obtain consistent film thickness.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_11.jpg","caption":"Figure 11. The evolution of the surface roughness during the $\\mathrm{Al}_2\\mathrm{O}_3$ ALD starting with two different initial $-\\mathrm{OH}$ concentrations at $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_11","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_11","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":625,"height":542,"image_format":"jpeg","image_sha256":"78ee70080700c7a570b35d68c97d8fd9be3ab4419b0d3a7e783f1c8400d7fd25","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":5,"width":620,"height":534}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows surface roughness during Al₂O₃ ALD at 300 °C. High initial OH gives an early roughness peak and later smoothing. Low initial OH shows steady roughness increase with cycle number.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycles | Roughness (Å), H: 6% | Roughness (Å), H: 0.5% |\\n|---|---|---|\\n| 1 | ~1.40 | ~0.95 |\\n| 3 | ~1.55 | ~1.00 |\\n| 5 | ~1.80 | ~1.30 |\\n| 6 | ~2.00 | ~1.40 |\\n| 8 | ~1.90 | ~1.85 |\\n| 9 | ~1.88 | ~1.85 |\\n| 11 | ~1.70 | ~1.95 |\\n| 12 | ~1.65 | ~2.05 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"When starting from a high OH concentration, surface roughness increases rapidly during early ALD cycles due to active growth and then decreases as the surface becomes more uniformly covered. In contrast, a low OH concentration leads to a slower but more continuous buildup of roughness as reactive sites gradually form. This indicates that initial surface chemistry strongly influences how roughness develops over time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The high-OH case shows a non-monotonic trend with a clear maximum in roughness at intermediate cycles followed by a decline. By comparison, the low-OH case shows a largely monotonic increase in roughness that continues into later cycles. These contrasting trends suggest different dominant growth and relaxation mechanisms depending on initial OH coverage.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The relationship implies that higher OH coverage initially promotes more uniform nucleation and surface reactions, eventually smoothing the surface as growth proceeds. Lower OH coverage delays uniform nucleation, leading to rougher and more heterogeneous surface structures over time. Thus, surface hydroxylation is closely tied to morphological evolution during ALD.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The trends suggest that higher initial OH concentrations can help limit long-term surface roughness by promoting more uniform growth after early cycles. Process strategies such as surface pre-treatment or controlled OH generation could therefore improve film smoothness. Monitoring roughness evolution also helps determine optimal cycle numbers to avoid roughness buildup at later stages.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_12.jpg","caption":"Figure 12. The evolution of the surface $-\\mathrm{OH}$ concentration during the ALD process at two different temperatures.","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_12","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":642,"height":609,"image_format":"jpeg","image_sha256":"56a10d61b3c9508f33c678f6119e03049873774035d463c4a2d8f96a94f0360d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":638,"height":602}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows how surface −OH concentration increases during ALD. The increase is faster at 300 °C than at 150 °C. Higher temperature leads to much higher −OH coverage.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycles | –OH concentration (nm⁻²), 150 °C | –OH concentration (nm⁻²), 300 °C |\\n|---|---|---|\\n| 0 | 0.10 | ~0.10 |\\n| 1 | 0.18 | ~0.20 |\\n| 2 | 0.20 | ~0.25 |\\n| 3 | 0.30 | ~0.40 |\\n| 4 | 0.48 | ~0.60 |\\n| 5 | 0.60 | ~0.90 |\\n| 6 | 0.70 | ~1.10 |\\n| 7 | 0.95 | ~1.50 |\\n| 8 | 1.20 | ~1.80 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cycle 1.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The strong temperature dependence indicates that surface hydroxylation is facilitated by thermally activated mechanisms such as ligand removal and reactive site formation. At 300 °C, these processes proceed more efficiently, creating a higher density of reactive –OH groups that can participate in subsequent ALD reactions. Thus, the evolving surface structure at elevated temperature enhances the reactivity and continuity of the ALD growth process.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 0.6 nm⁻².\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_13.jpg","caption":"Figure 13. The evolution of the surface roughness during the ALD process at two different temperatures.","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_13","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_13","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":633,"height":520,"image_format":"jpeg","image_sha256":"9638180a763924e0e914e26a392303ede66688acbceff86abca8e2544eb82067","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":5,"width":627,"height":513}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows growth per cycle during ALD at 150 °C and 300 °C. Growth decreases during the first few cycles at both temperatures. After this, growth increases with cycle number. The increase is stronger at 300 °C than at 150 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycles | Growth per cycle (Å), 150 °C | Growth per cycle (Å), 300 °C |\\n|---|---|---|\\n| 1 | ~0.11 | ~0.08 |\\n| 2 | ~0.04 | ~0.07 |\\n| 3 | ~0.03 | ~0.15 |\\n| 4 | ~0.10 | ~0.13 |\\n| 5 | ~0.10 | ~0.18 |\\n| 6 | ~0.14 | ~0.17 |\\n| 7 | ~0.23 | ~0.30 |\\n| 8 | ~0.21 | ~0.38 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The incubation (or nucleation) stage.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around cycle 7.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Slower formation of reactive surface sites\\n-Reduced reaction kinetics at lower temperature\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure suggests that higher temperatures can be used to achieve faster growth once incubation effects are overcome, which may be beneficial for throughput-sensitive applications. Conversely, lower temperatures may be chosen when finer control over early growth is required. Understanding the trade-off between incubation behavior and steady-state growth helps optimize temperature selection for specific film quality and performance goals.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_3.jpg","caption":"Figure 3. Total density profiles after zero (blue), four (red) and eight (green) ALD cycles as a function of the distance along the $Z$ direction of the $\\mathrm{Al}_2\\mathrm{O}_3$ film at $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":619,"height":500,"image_format":"jpeg","image_sha256":"e9d597c02aa42f1af5fdb12e95a58860d6cf89293f561d81b15ffb96324d3cbc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":614,"height":497}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents total density profiles along the Z direction of an Al₂O₃ film after 0, 4, and 8 ALD cycles. All three profiles show a high initial density near the substrate interface, followed by a rapid decrease and a secondary peak around 5–7 Å. With increasing ALD cycles, the density extends further into the film, producing broader and more gradual decay profiles. The L8 curve maintains higher density values at larger Z distances, indicating thicker and more fully developed film growth compared with L0 and L4.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Z (Å) | Density L0 (g/cm³) | Density L4 (g/cm³) | Density L8 (g/cm³) |\\n|---|---|---|---|\\n| 3 | 1.15 | 1.15 | 1.15 |\\n| 4 | 0.58 | 0.58 | 0.58 |\\n| 5 | 0.65 | 0.63 | 0.61 |\\n| 6 | 0.80 | 0.87 | 0.85 |\\n| 7 | 0.56 | 0.70 | 0.70 |\\n| 8 | 0.25 | 0.58 | 0.68 |\\n| 9 | 0.10 | 0.38 | 0.58 |\\n| 10 | 0.03 | 0.20 | 0.50 |\\n| 11 | 0.00 | 0.10 | 0.40 |\\n| 12 | 0.00 | 0.05 | 0.30 |\\n| 13 | 0.00 | 0.00 | 0.18 |\\n| 14 | 0.00 | 0.00 | 0.10 |\\n| 15 | 0.00 | 0.00 | 0.00 |\\n| 17 | 0.00 | 0.00 | 0.00 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the number of ALD cycles systematically shifts the density profiles outward along the Z direction and broadens their shapes. L0 shows the steepest decay, indicating a thinner initial film, whereas L4 and especially L8 retain significant density at larger Z values. The secondary peak present in all curves becomes more pronounced and moves slightly outward as the film grows. Overall, the progression from L0 to L8 reflects the accumulation of material and the development of a thicker, more homogeneous oxide layer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A locally dense atomic layer or sublayer within the growing Al₂O₃ film.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A broader density distribution suggests a more extended and uniformly packed film, which may enhance barrier properties such as moisture resistance, dielectric strength, and mechanical stability. Greater density retention at larger Z distances indicates fewer voids or low-density regions, contributing to improved film continuity. These characteristics generally lead to better long-term performance in applications where conformal coverage and structural integrity are critical.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- The steepness of the initial density decay, indicating early nucleation efficiency.\\n- The height and location of the secondary peak, reflecting sublayer formation.\\n- The extent of density at larger Z values, showing how far the film has grown.\\n- Differences between L0, L4, and L8 that reveal transition from initial nucleation to steady-state growth.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_4.jpg","caption":"Figure 4. Number density profiles for O, Al and H as a function of the distance along the $Z$ direction of the $\\mathrm{Al}_2\\mathrm{O}_3$ film at $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":620,"height":497,"image_format":"jpeg","image_sha256":"bf21daf84048bc60fab6ead4ea4c3ebefe2f416ad1bc1eb97dda0f35b4de9dde","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":614,"height":494}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows number-density profiles of O, Al, and H atoms across the Z direction of an Al2O3 film at 300 °C. Oxygen exhibits the highest and most structured density distribution near the film surface, with prominent peaks indicating layered arrangements. Aluminum shows a similar but slightly shifted density profile with a lower overall magnitude. Hydrogen appears in much smaller concentrations and peaks closer to the mid-film region before tapering off. Together these profiles describe the atomic layering and composition variation within the film thickness.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Z (Å) | O density (nm⁻³) | Al density (nm⁻³) | H density (nm⁻³) |\\n|----|----|----|----|\\n| 3 | 14.0 | 17.0 | 0.5 |\\n| 4 | 15.0 | 4.0 | 0.5 |\\n| 5 | 10.0 | 8.0 | 1.5 |\\n| 6 | 15.5| 10.0 | 1.5 |\\n| 7 | 13.0 | 8.0 | 2.0 |\\n| 8 | 10.0 | 6.0 | 3.0 |\\n| 9 | 8.0 | 4.0 | 4.0 |\\n| 10 | 4.0 | 2.0 | 4.0 |\\n| 11 | 3.0 | 1.0 | 3.0 |\\n| 12 | 2.0 | 0.0 | 2.0 |\\n| 13 | 0.5| 0.0 | 1.0 |\\n| 14 | 0.0 | 0.0 | 0.0 |\\n| 15 | 0.0 | 0.0 | 0.0 |\\n| 16 | 0.0 | 0.0 | 0.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 6 Å.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, after approximately Z = 11 Å, the H density remains positive while O drops toward zero.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"None; all densities have reached 0 nm⁻³ by this distance.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- The relative heights and positions of the O and Al peaks, indicating layered ordering.\\n- The full width and decay behavior of the density tails as Z increases.\\n- The presence and magnitude of hydrogen density, as it reflects realistic surface hydroxylation or defect levels.\\n- The overall stoichiometric consistency inferred from integrated densities.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_5.jpg","caption":"Figure 5.Ratio of Al[4]/Al[3] after zero (blue), four (red) and eight (green) ALD cycles as a function of the distance along the $Z$ direction of the $\\mathrm{Al}_2\\mathrm{O}_3$ film at $300^{\\circ}\\mathrm{C}$","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_5","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":637,"height":547,"image_format":"jpeg","image_sha256":"b9a4f191183b7b67300980b21366e05261a28ed9045e05f6a48be0ff27af0198","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":5,"width":630,"height":541}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the ratio of four-fold to three-fold coordinated aluminum (Al[4]/Al[3]) as a function of depth (Z direction) in an Al2O3 film after 0, 4, and 8 ALD cycles at 300 °C. The ratio is lowest and rapidly decays with depth for L0, indicating limited tetrahedral coordination. With increasing ALD cycles (L4 and L8), the Al[4]/Al[3] ratio increases significantly near the surface and exhibits pronounced oscillations, followed by a sharp decrease toward the film interior. This suggests cycle-dependent structural evolution of aluminum coordination across the film thickness.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Z (Å) | Al[4]/Al[3] (L0) | Al[4]/Al[3] (L4) | Al[4]/Al[3] (L8) |\\n|---|---|---|---|\\n| 5 | 5.0 | 5.0 | 10 |\\n| 6 | 3.0 | 6.2 | 13 |\\n| 7 | 2.5 | 7.5 | 16 |\\n| 8 | 2.0 | 10.0 | 14.5 |\\n| 9 | 1.5 | 8.5 | 21 |\\n| 10 | 0.0 | 7.5 | 16 |\\n| 11 | 0.0 | 7.5 | 11.5 |\\n| 12 | - | 10.0 | 18.5 |\\n| 13 | — | 0.0 | 6.0 |\\n| 14–16 | — | — | 3 → ~0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Eight ALD cycles (L8).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- Increased tetrahedral aluminum coordination\\n- Higher network connectivity\\n- Surface regions closer to bulk-like Al2O3 structure\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Depth-dependent coordination provides insight into how film structure develops during ALD and how surface reactions propagate inward. Variations in Al coordination affect film density, chemical stability, and dielectric behavior. Understanding these trends helps optimize ALD cycle numbers and processing conditions for applications requiring controlled structural and functional properties.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_6.jpg","caption":"Figure 6.Ratio of O[3]/O[2] after zero (blue), four (red) and eight (green) ALD cycles as a function of the distance along the $Z$ direction of the $\\mathrm{Al}_2\\mathrm{O}_3$ film at $300^{\\circ}\\mathrm{C}$","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":639,"height":553,"image_format":"jpeg","image_sha256":"9ad86218129a364f324af35cd994404f7671dd5fc6017440b973c2bd8cf39998","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":633,"height":547}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the ratio of three-fold to two-fold coordinated oxygen (O[3]/O[2]) as a function of depth in an Al2O3 film after 0, 4, and 8 ALD cycles at 300 °C. For all cases, the ratio is highest near the surface and decreases rapidly toward the film interior. Increasing ALD cycles shift the O[3]/O[2] distribution to higher values and extend the depth range over which three-fold coordination persists, indicating progressive structural densification near the surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Z (Å) | O[3]/O[2] (L0) | O[3]/O[2] (L4) | O[3]/O[2] (L8) |\\n|---|---|---|---|\\n| 5 | 1.0 | 1.20 | 1.00 |\\n| 6 | 1.1 | 1.55 | 1.90 |\\n| 7 | 1.0 | 1.70 | 2.10 |\\n| 8 | 0.7 | 1.20 | 1.65 |\\n| 9 | 0.35 | 0.75 | 1.60 |\\n| 10 | 0.2 | 0.80 | 1.30 |\\n| 11 | 0.0 | 0.30 | 1.00 |\\n| 12 | 0.0 | 0.20 | 0.80 |\\n| 13 | 0.0 | 0.00 | 0.50 |\\n| 14–16 | — | 0.00 | 0.1 → 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Eight ALD cycles (L8).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- Higher prevalence of three-fold coordinated oxygen\\n- Increased network connectivity\\n- More bulk-like oxide bonding configuration\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Oxygen coordination directly influences film density, mechanical stability, and dielectric properties of Al2O3. Variations in O[3]/O[2] with depth reveal how surface reactions evolve during ALD and how structural relaxation progresses into the film. Such insight is essential for designing ALD processes that produce uniform, high-quality oxide layers for electronic and protective applications.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_9.jpg","caption":"Figure 9. The evolution of the surface $-\\mathrm{OH}$ concentration during the $\\mathrm{Al}_2\\mathrm{O}_3$ ALD starting with two different initial $-\\mathrm{OH}$ concentrations at $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_9","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":634,"height":562,"image_format":"jpeg","image_sha256":"adabac16ae58d7da622ad22875ab5d96f7bb59d475f7a0f7b083623f2f392ef1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":5,"width":629,"height":555}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the evolution of surface –OH concentration during Al2O3 ALD at 300 °C for two different initial –OH surface coverages. For the high initial –OH case (6.0%), the surface concentration increases rapidly during early cycles and then approaches a plateau near 5 nm⁻². In contrast, the low initial –OH case (0.5%) exhibits a slower but continuous increase throughout the ALD cycles, eventually reaching much lower values than the high-OH surface. This highlights the strong influence of initial surface chemistry on hydroxyl regeneration behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycles | –OH concentration (nm⁻²), H: 6.0% | –OH concentration (nm⁻²), H: 0.5% |\\n|---|---|---|\\n| 1 | 2.8 | 0.2 |\\n| 3 | 3.8 | 0.4 |\\n| 5 | 4.0 | 0.9 |\\n| 7 | 4.6 | 1.4 |\\n| 8 | 4.9 | 1.8 |\\n| 9 | 4.9 | 2.0 |\\n| 10 | 4.9 | 2.6 |\\n| 12 | 5.1 | 3.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The surface starting with 6.0% initial –OH concentration.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- Rapid increase during early ALD cycles\\n- Reduced slope at intermediate cycles\\n- Nearly constant –OH concentration at later cycles\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Surface –OH groups act as key reactive sites for precursor adsorption during ALD. Knowing how their concentration evolves helps in predicting growth rates, incubation behavior, and surface reactivity over multiple cycles. This information is critical for selecting surface pre-treatments and process conditions that lead to uniform and controlled film growth.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_15.jpg","caption":"Figure 15. Fraction of lattice site vacant at the end of the simulation after $2 \\mathrm{~s}$ of deposition (10 cycles). It is evident that the film growth is slow at low temperature (blue) because the lattice sites are occupied only up to a $9 \\mathrm{\\AA}$ thickness. At slightly higher temperatures, the film grows faster but the deposited film contains many defects and has a lower density of atoms than a bulk $\\mathrm{ZnO}$ . The fraction of defects decreases with increasing temperature.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_15","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_15","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":616,"height":486,"image_format":"jpeg","image_sha256":"5eb0d1d2b31432b74b78f39d38773470c734a6935353c7fe278a4b518561a630","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":612,"height":482}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the fraction of vacant lattice sites along the z-axis at various temperatures. Where the different temperatures result in different profiles also related to GPC.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| z-axis / angstrom | 27 °C | 52 °C | 77 °C | 127 °C | 177 °C |\\n|---|---|---|---|---|---|\\n| 0.00 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 5.00 | 0.60 | 0.30 | 0.28 | 0.25 | 0.20 |\\n| 10.00 | 0.75 | 0.28 | 0.25 | 0.15 | 0.15 |\\n| 15.00 | 0.95 | 0.40 | 0.25 | 0.15 | 0.15 |\\n| 20.00 | 1.00 | 0.70 | 0.25 | 0.15 | 0.15 |\\n| 25.00 | 1.00 | 0.95 | 0.50 | 0.15 | 0.15 |\\n| 30.00 | 1.00 | 1.00 | 0.95 | 0.75 | 0.75 |\\n| 35.00 | 1.00 | 1.00 | 1.00 | 1.00 | 1.00 |\\n| 40.00 | 1.00 | 1.00 | 1.00 | 1.00 | 1.00 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems that if the line reaches the value 1 this represents that the growth has stopped, indicating that for higher temperature the film thickness increases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At the interface between the starting surface and at the surface.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"About 10 angstrom for the process' at 127 and 177 degrees. The rest of the material shows little vacancies and can be seen as the bulk.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Vacancies in the lattice structure can act as charge traps, resulting in lower performances.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_16.jpg","caption":"Figure 16. Fraction of lattice sites in the film that contain an ethyl-ligand. The fraction of sites containing an ethyl-ligand peaks at the beginning of the deposition. The peak then levels down to about 20 to $25\\%$ of sites containing an ethyl-ligand.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_16","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_16","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_16.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":617,"height":486,"image_format":"jpeg","image_sha256":"95fc7f7b2835bd7cea0b33fe8b5bfe15703927e7fb4663274a8ef6b50ca2f5ae","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":615,"height":481}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the fraction of sites containing a ligand along the z-axis at various temperatures (27°C, 77°C, 127°C, and 177°C). The highest fraction occurs around 5 angstroms for all temperatures, with a subsequent decline.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| z-axis / angstrom | 27 °C | 77 °C | 127 °C | 177 °C |\\n|---|---|---|---|---|\\n| 0 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 3 | 0.48 | 0.48 | 0.35 | 0.30 |\\n| 5 | 0.20 | 0.20 | 0.20 | 0.20 |\\n| 10 | 0.15 | 0.24 | 0.24 | 0.24 |\\n| 15 | 0.00 | 0.24 | 0.24 | 0.24 |\\n| 20 | 0.00 | 0.24 | 0.24 | 0.24 |\\n| 25 | 0.00 | 0.10 | 0.15 | 0.15 |\\n| 30 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 35 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 40 | 0.00 | 0.00 | 0.00 | 0.00 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Deep in the film, right at the interface between the substrate and the film. This is irrespective of the deposition temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ABout 24 degrees.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The GPC is roughly equal as for both temperatures the film extends equally far in the z-direction.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1:0.50:0.50\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_6.jpg","caption":"Figure 6. Change in energy as a function of water molecules as well as the averaged adsorption energy per adsorbed water molecule. At the ethyl-coverage of 7.1 ethyl $\\mathrm{nm}^{-2}$ , the adsorption bond of a single water molecule is strong. However, inclusion of more water molecules weakens the average adsorption bond because of steric hindrance. After three water molecules, no further water can adsorb to the surface.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":625,"height":514,"image_format":"jpeg","image_sha256":"414692eb2d13d30765643bc8d179d6b18f895c1cd223c97748026334c76186f2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":625,"height":513}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the trend of overall adsorption energy and averaged adsorption energy per H₂O molecule as the number of H₂O molecules increases, where the adsorption energy minimizes after the adsorption of three water molecules.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of H₂O molecules in the system | Overall adsorption energy | Averaged adsorption energy per H₂O |\\n|---|---|---|\\n| 1 | -1.25 | -1.25 |\\n| 2 | -1.75 | -0.80 |\\n| 3 | -2.25 | -0.75 |\\n| 4 | -2.1 | -0.5 |\\n| 5 | -2.25 | -0.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This can be concluded by the fact that the overall adsorption energy does not further decrease with increasing number of adsorbed water molecules.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Linear\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Water reacts with the remaining ligands at the surface. If these are all removed the water can no longer adsorb.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"-2.25 eV.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_9.jpg","caption":"Figure 9. Simulated QCM data from the kMC model. Initially, the growth rate is the same for all temperatures when the surface becomes saturated with DEZ. However, after ethyl-saturation, the different temperature graphs diverge as the elimination of ethyl-ligands is low at low temperatures.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_9","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":613,"height":483,"image_format":"jpeg","image_sha256":"f2913c5a31f3df34688b510d0fc06ebd46c077157640860d623693c5e51089a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":609,"height":482}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the mass gain over time at different temperatures (27°C, 77°C, 127°C, 177°C). The mass gain increases stepwise with time, indicating a cumulative effect, characteristic of ALD.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time / seconds | Mass-gain / ng cm⁻² 27 | Mass-gain / ng cm⁻² 77 | Mass-gain / ng cm⁻² 127 | Mass-gain / ng cm⁻² 177 |\\n|---|---|---|---|---|\\n| 0 | 0 | 0 | 0 | 0 |\\n| 1 | 120 | 120 | 120 | 120 |\\n| 2 | 225|250|300|300|\\n| 4 | 300 |350|450|450|\\n| 6 | 300 |450|600|600|\\n| 8 | 300 |740|900|900|\\n| 10 | 375 |850|1050|1050|\\n| 12 | 375 |975|1200|1200|\\n| 14 | 375 |1100|1350|1350|\\n| 16 | 375 |1250|1500|1500|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The duration of single cycle is 1.6 seconds. This can be concluded from the graph that there are 10 cycles in a time span of 16 seconds in the figure.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No there is no cyclic growth. For ALD the increase every cycle should be the same, this is not the case fpr 27 degrees Celcius.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"127, 177 degrees Celcius.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Water can condensate below a 100 degrees Celcius, so a process temperature of 77 degrees can result in liquid water in the reactor.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_11_figure_4.jpg","caption":"Figure 4. $\\mathrm{ZnO}$ thickness as a function of the number of ALE cycles for temperatures between $100$ and $250^{\\circ}\\mathrm{C}$ , as measured by in situ SE.","id":"train/atomic-layer-etching/experimental-usecase/11/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/11/figure_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plasma.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":427,"height":348,"image_format":"jpeg","image_sha256":"3a1b8e63e53530dfb0a821d70946069cf7a6f85b7ad132e21004c37923e038a0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":459,"y":3,"width":365,"height":303}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot shows change in ZnO thickness as a function of number of ALE cycles at various temperatures\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of ALE Cycles | 100 °C (Å) | 150 °C (Å) | 200 °C (Å) | 250 °C (Å) |\\n|----------------------|-----------|-----------|-----------|-----------|\\n| 0 | 585 | 585 | 585 | 585 |\\n| 10 | 580 | 575 | 570 | 565 |\\n| 20 | 575 | 565 | 555 | 545 |\\n| 30 | 570 | 555 | 540 | 530 |\\n| 40 | 565 | 545 | 530 | 525 |\\n| 50 | 560 | 540 | 525 | 520 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, in-situ SE\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The EPCs at different temperatures are as follows, \\n1. 100 °C, 0.54 ± 0.05 Å\\n2. 150 °C, 0.97 ± 0.07 Å\\n3. 200 °C, 1.25 ± 0.08 Å\\n4. 250 °C, 1.31 ± 0.08 Å\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ZnO thickness can be seen to decrease linearly with the number of ALE cycles for each temperature, in line with a layer-by-layer etching mechanism.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As seen in image, the thicknesses decrease more at higher temperatures, thus etch per cycle and the ALE increases with increase in temperature\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_13_figure_3.jpg","caption":"Figure 3. Etch rate per cycle of the atomic layer etching (ALE) for (a) varying $\\mathrm{O_2}$ and fixed $\\mathrm{BCl_3}$ plasma times per cycle and (b) varying $\\mathrm{BCl_3}$ and fixed $\\mathrm{O_2}$ plasma times.","id":"train/atomic-layer-etching/experimental-usecase/13/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/13/figure_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/Low-Damage and Self-Limiting (Al)GaN Etching Process.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1150,"height":414,"image_format":"jpeg","image_sha256":"ae2956d4683a4f7835b97ae8ba70f6c9f771226f6fa4224b643393f63fbed642","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":4,"width":549,"height":409},{"panel_id":"b","x":595,"y":8,"width":553,"height":404}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch rate increases linearly with increasing O₂ time/cycle for both BCl₃ time/cycles of 60 sec and 30 sec.\"},{\"panel_id\":\"b\",\"text\":\"The etch rate increases linearly with increasing BCl₃ time/cycle for both O₂ time/cycles of 60 sec and 30 sec.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| O₂ time/cycle (sec) | Etch rate [nm/cycle] BCl₃ time/cycle 30 sec | Etch rate [nm/cycle] BCl₃ time/cycle 60 sec |\\n|---|---|---|\\n| 0 | 0.0 | 0.0 |\\n| 30 | 0.4 | 0.4 |\\n| 45 | 0.5 | 0.6 |\\n| 50 | 0.5 | 0.6 |\\n| 60 | 0.55 | 0.7 |\\n| 90 | 0.55 | 0.7 |\"},{\"panel_id\":\"b\",\"text\":\"| BCl₃ time/cycle (sec) | Etch rate [nm/cycle] O₂ time/cycle 30 sec | Etch rate [nm/cycle] O₂ time/cycle 60 sec |\\n|---|---|---|\\n| 0 | 0.0 | 0.0 |\\n| 30 | 0.4 | 0.6 |\\n| 45 | 0.4 | 0.7 |\\n| 50 | 0.4 | 0.7 |\\n| 90 | 0.4 | 0.7 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 3 shows that the etch rate per ALE cycle increases with increasing O₂ plasma exposure up to 60 s when the BCl₃ plasma time is held constant, indicating that longer oxidation enhances the formation of a removable surface layer. Beyond 60 s, the etch rate plateaus, suggesting that the surface becomes fully oxidized and that further O₂ exposure does not increase the amount of material available for removal, consistent with self-limiting behaviour. Similarly, when the O₂ plasma time is fixed at 60 s and the BCl₃ exposure is increased, the etch rate rises until 45 s, after which it also saturates, implying that the chlorination and removal step has become complete.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.4 nm/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.7 nm/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.6 nm/cycle.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_13_figure_4.jpg","caption":"Figure 4. Etch rate when using $\\mathrm{BCl}_3$ plasma under a fixed ICP power of $400 \\mathrm{W}$ and varying bias powers.","id":"train/atomic-layer-etching/experimental-usecase/13/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/13/figure_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/Low-Damage and Self-Limiting (Al)GaN Etching Process.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":623,"height":478,"image_format":"jpeg","image_sha256":"bf66abcda001fa1b3194d3edb70f4248b0130a5de1ef7a760bfb1318ee30bdf8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":619,"height":475}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the etch rate of GaN and AlGaN as a function of bias power. The etch rate increases linearly with bias power for both materials.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Bias power [W] | Etch rate [nm/min] GaN | Etch rate [nm/min] GaN |\\n|---|---|---|\\n| 0 | 0.0 | 0.0 |\\n| 5 | 1.0 | 1.0 |\\n| 10 | 4.0 | 2.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10 mTorr.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"400 W.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"BCl3 plasma.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the bias power increases, initially no etching is observed. Only at a bias power higher than 2 W is any etching observed. This means that above 2 W, the BCl3 plasma is energetic enough to etch the substrates without the need of O2 plasma, which also means that above 2 W, the reactions during the BCl3 plasma exposure are not self-limiting.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_13_figure_8.jpg","caption":"Figure 8. $I - V$ curves of the fabricated Schottky diodes. (a) Forward $I - V$ characteristics (linear scale), (b) forward $I - V$ characteristics (log scale), (c) reverse $I - V$ characteristics (log scale), and (d) ideality factors.","id":"train/atomic-layer-etching/experimental-usecase/13/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/13/figure_8","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/Low-Damage and Self-Limiting (Al)GaN Etching Process.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1367,"height":964,"image_format":"jpeg","image_sha256":"3398e05ea2f7dd696f5c12129a0583084338d58a0dacc52469c93f2a2674326c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":11,"width":659,"height":432},{"panel_id":"b","x":703,"y":9,"width":663,"height":460},{"panel_id":"c","x":5,"y":535,"width":641,"height":421},{"panel_id":"d","x":721,"y":551,"width":645,"height":402}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between forward voltage and current for two methods: ALE and Digital etching.\"},{\"panel_id\":\"b\",\"text\":\"The line chart displays the logarithmic scale of current against forward voltage for ALE and Digital etching.\"},{\"panel_id\":\"c\",\"text\":\"The line chart illustrates the absolute value of current against reverse voltage for ALE and Digital etching.\"},{\"panel_id\":\"d\",\"text\":\"The line chart depicts the ideality factor n against forward voltage for ALE and Digital etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Forward voltage (V) | Current [mA] ALE | Current [mA] Digital etching |\\n|---|---|---|\\n| 0.0 | 0 | 0 |\\n| 0.5 | 0 | 0 |\\n| 1.0 | 20 | 20 |\\n| 1.5 | 60 | 60 |\\n| 2.0 | 100 | 100 |\"},{\"panel_id\":\"b\",\"text\":\"| Forward voltage (V) | Current [A] ALE | Current [A] Digital etching |\\n|---|---|---|\\n| 0.0 | 10^-11 | 10^-11 |\\n| 0.5 | 10^-5 | 10^-6 |\\n| 1.0 | 10^-2 | 10^-2 |\\n| 1.5 | 10^-2 | 10^-2 |\\n| 2.0 | 10^-1 | 10^-1 |\"},{\"panel_id\":\"c\",\"text\":\"| Reverse voltage (V) | Current [A] ALE | Current [A] Digital etching |\\n|---|---|---|\\n| -10 | 10^-4 | 10^-4 |\\n| -9 | 10^-5 | 10^-5 |\\n| -8 | 10^-5 | 10^-5 |\\n| -7 | 10^-6 | 10^-6 |\\n| -6 | 10^-6 | 10^-6 |\\n| -5 | 10^-6 | 10^-6 |\\n| -4 | 10^-7 | 10^-7 |\\n| -3 | 10^-7 | 10^-7 |\\n| -2 | 10^-8 | 10^-8 |\\n| -1 | 10^-10 | 10^-8 |\\n| 0 | 10^-12 | 10^-10 |\"},{\"panel_id\":\"d\",\"text\":\"| Forward voltage (V) | Ideality factor n Digital etching | Ideality factor n ALE |\\n|---|---|---|\\n| 0.0 | 0.5 | 1.4 |\\n| 0.05 | 1.3 | 1.3 |\\n| 0.1 | 1.8 | 1.2 |\\n| 0.15 | 1.9 | 1.2 |\\n| 0.2 | 2.2 | 1.1 |\\n| 0.25 | 2.4 | 1.2 |\\n| 0.3 | 2.5 | 1.1 |\\n| 0.35 | 1.7 | 1.2 |\\n| 0.4 | 1.5 | 1.2 |\\n| 0.45 | 1.2 | 1.2 |\\n| 0.5 | 1.2 | 1.5 |\\n| 0.55 | 1.2 | 1.7 |\\n| 0.6 | 1.6 | 2.3 |\\n| 0.65 | 2.2 | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 20 mA.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is about 10^-8 A for the ALE sample and 10^-7 A for the Digital etching sample.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 8d shows that the diode fabricated using ALE exhibits a much more uniform and lower ideality factor in the low forward-bias region compared to the diode processed by digital etching, indicating reduced trap-assisted recombination and fewer defect states at the junction. In contrast, the non-uniform slope observed for the digital etching case suggests greater plasma-induced damage.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 10^-10 A for the ALE sample and 10^-9 A for the Digital etching sample.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_16_fig_2.jpg","caption":"Fig. 2. a) Film deposition rate on different materials and b) radicals concentration over $\\nu_{\\mathrm{CF4}}$ in the plasma mixture, while Ar fraction is $83.3\\%$ . Negative values correspond to etching.","id":"train/atomic-layer-etching/experimental-usecase/16/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/16/fig_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/Selective atomic layer etching of Al2O3, AlNx and HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":964,"height":355,"image_format":"jpeg","image_sha256":"7032718f0be80a9e6064ebb2bc165f223e723a2d2408bb3bc7ba3011334b70cf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":43,"y":35,"width":470,"height":319},{"panel_id":"b","x":529,"y":36,"width":434,"height":318}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the deposition rate on different materials (Si, Al2O3, HfO2, AlNx, TiN, SiO2) against the fraction of CF4 in the plasma mixture. For all materials, the deposition rate increases rapidly at low CF₄ content and then decreases again at higher CF₄ concentrations.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the concentration of F, CF2, and CF species against the fraction of CF4 in the plasma mixture. For all three species, the concentration increases with CF₄ content, but the increase becomes more gradual at higher CF₄ concentrations.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ν_CF4 (%) | Si (nm/min) | Al2O3 (nm/min) | HfO2 (nm/min) | AlNx (nm/min) | TiN (nm/min) | SiO2 (nm/min) |\\n|-----------|-------------|----------------|---------------|---------------|--------------|---------------|\\n| ~3 | ~1.5 | ~2.5 | ~2.3 | ~2.6 | ~2.2 | ~0.8 |\\n| ~5 | ~4.0 | ~6.0 | ~5.5 | ~6.2 | ~1.5 | ~1.2 |\\n| ~10 | ~3.0 | ~4.5 | ~3.5 | ~4.8 | ~−1.0 | ~−5.5 |\\n| ~13 | ~2.0 | ~3.8 | ~3.2 | ~4.0 | ~−0.3 | ~−5.0 |\"},{\"panel_id\":\"b\",\"text\":\"| ν_CF4 (%) | F (cm⁻³) | CF2 (cm⁻³) | CF (cm⁻³) |\\n|-----------|------------------|------------------|------------------|\\n| ~3 | ~1×10¹³ | ~5×10¹⁰ | ~2×10¹⁰ |\\n| ~5 | ~2×10¹³ | ~8×10¹⁰ | ~3×10¹⁰ |\\n| ~7 | ~5×10¹³ | ~1×10¹¹ | ~5×10¹⁰ |\\n| ~10 | ~8×10¹³ | ~1.6×10¹¹ | ~9×10¹⁰ |\\n| ~13 | ~1×10¹⁴ | ~1.8×10¹¹ | ~1.1×10¹¹ |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both increase in value as the concentration of CH4 increases. However, F reaches a maximum value close to 10^14, while CF reaches 10^11\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The CF₄ fraction (ν_CF₄) in the plasma mixture.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plot indicates that as the CF4 fraction in the plasma increases, the F concentration rises extremely rapidly for mixtures above about 5% CF4, growing by several orders of magnitude relative to CF and CF2 (due to the logarithmic scale). While CF and CF2 radicals contribute mainly to film growth, F atoms favor the formation of volatile fluorides and thus promote etching. When F becomes predominant in the plasma, deposition is progressively suppressed and, for some materials, the overall process switches from film growth to etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Fluorine radical concentration increases from 10^13 to the order of 10^14 with change in CF4 concentration and is higher than the CFx concentrations.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With increase of CF4 fraction, the deposition rate increases slowly at first and then reaches a maximum. Further increase of CF4 leads to decrease of deposition rate for Si, Al2O3, HfO2, and AlNx. In the case of SiO2 and TiN, increase of CF4 causes a change from deposition to etching.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No.\\nFluorine-containing radicals concentration increase with the growth of CF₄ fraction in plasma mixture.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"F (fluorine), with concentration near 10¹⁴ cm⁻³.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As ν_CF₄ increases, higher F and CFₓ radical densities initially enhance surface reactions, leading to higher deposition rates. Beyond the mid-fraction range, excessive fluorination and increased etching probability reduce net growth, producing the observed decline in deposition rates despite rising radical concentrations.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The radical concentration of CF has the highest dependence on the CF4 concentration.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the CF₄ fraction increases, the concentration of fluorine-containing radicals such as F, CF, and CF₂ rises significantly, enhancing chemical reactivity at the surface. At moderate CF₄ levels, polymer-forming species promote deposition, while at higher CF₄ fractions, the high density of reactive fluorine radicals enhances bond breaking and material removal. This shift in plasma chemistry alters surface reaction pathways, causing certain materials, such as SiO₂ and TiN, to transition from net deposition to net etching.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"TiN, SiO₂\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Although the process involves depositing materials onto a film, come materials, such as TiN and SiO2, etch. Therefore, the deposition rate decreases as the CF4 concentration increases.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The deposition rate is lowest for SiO1 and highest for ALNx\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The deposition ratio increases up to around 5% and 6% of CF4, then decreases as the concentration increases. In contrast, the concentration of CF4 and radicals is proportional, and the relationship is stronger in the case of F.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Atomic F has the fastest growth relative to CF and CF2, this implies a kinetic shift towards etching as v_CF4 increases.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Si, Al2O3, HfO2, AINx, TiN, SiO2\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All materials start in net deposition at low ν_CF₄. As ν_CF₄ increases, the rates climb to a peak at low–mid ν_CF₄ and then drop. For SiO₂ and TiN, the curve crosses zero at higher ν_CF₄, this means they switch from deposition to etching. This is consistent with panel (b): the F radical grows fastest relative to CF/CF₂, pushing the surface balance toward etching.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The graph shows how the deposition rate changes with CF4 fraction for different materials. Based only on this data, AlNx looks like the best choice for industrial use. It has the highest deposition rate and stays relatively high across the whole CF4 concentration range, which would enable faster processing.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"6.6% (fastest deposition).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Below 5% CF4, as the concentration of CF4 increases, so too does the deposition rate on all substrates. Above 5%, the deposition rate generally decreases. On SiO2 however, etching occurs instead above 5% CF4 and this also occurs for TiN above 10% CF4.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN and SiO2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The chamber pressure was kept at 10 mTorr; The plasma was always composed of 83.3% Ar the molecular fraction of CF4 varied between 3.3 and 13.3%, with the remaining fraction consisting of H2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At about 7% CF4 concentration, the deposition rates of Al2O3, HfO2, Si and AlN are highest.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the CF₄ fraction rises further, the concentration of highly reactive fluorine (F) radicals increases much more rapidly. This significant rise in 'F' radicals shifts the surface kinetics from a deposition-dominated process to an etching-dominated one, where 'F' atoms aggressively etch the deposited film.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"For higher CF₄ fractions:-\\n\\n1) On SiO₂ the deposition rate becomes negative, indicating an etching process.\\n\\n2) On Si, Al₂O₃, HfO₂, and AlNₓ, the deposition rate decreases but remains positive, indicating net deposition.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, but only for specific materials.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiO₂ and TiN\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Low CF₄ fraction (<5%) because: (1) provides polymer deposition on target materials (Al₂O₃, AlNx, HfO₂), (2) avoids etching of potential mask materials (SiO₂, TiN)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes (approximately—most materials peak around 5-6.6% CF₄).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Highest: [ALNx] (~[6.1]); net etch: SiO2 (negative).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The materials are TiN and SiO2\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The material that should be used as substrate is AlNx\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An experiment can be designed such that initial thickness and final thickness can be determined after exposure to the plasma. Some materials thicknesses will decrease, others will increase.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_16_fig_4.jpg","caption":"Fig. 4. The etch rate over modification step duration a) for all studied materials, and b) enlarged for $\\mathrm{Al_2O_3}$ , $\\mathrm{AlN_x}$ , and $\\mathrm{HfO_2}$ .","id":"train/atomic-layer-etching/experimental-usecase/16/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/16/fig_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/Selective atomic layer etching of Al2O3, AlNx and HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":953,"height":383,"image_format":"jpeg","image_sha256":"8546dbe44307f34383247a219f554da1449ae7012e2c77cb6ccf556bb405e858","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":13,"y":33,"width":507,"height":349},{"panel_id":"b","x":547,"y":51,"width":406,"height":317}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Etch rate as a function of modification step duration shows material-dependent behavior. SiO₂ increases nearly monotonically, reaching ~0.8 nm/cycle at long times. AlNₓ and Al₂O₃ exhibit mid-range maxima (~6–10 s) followed by a decline at longer durations. HfO₂ peaks later (~10–12 s) at a lower maximum rate. TiN remains near zero or slightly negative across the full duration range.\"},{\"panel_id\":\"b\",\"text\":\"The enlarged view emphasizes distinct optimal modification windows: AlNₓ peaks earliest (~6–8 s), Al₂O₃ slightly later (~8–10 s), and HfO₂ latest (~10–12 s). Beyond these windows, etch rates decrease, indicating over-modification effects.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Modification step duration (s) | Al₂O₃ (nm/cyc) | HfO₂ (nm/cyc) | AlNₓ (nm/cyc) | TiN (nm/cyc) | SiO₂ (nm/cyc) |\\n|---|---|---|---|---|---|\\n| 0 | ~0.02 | ~0.01 | ~0.02 | ~0.00 | ~0.05 |\\n| 4 | ~0.15 | ~0.06 | ~0.17 | ~0.00 | ~0.30 |\\n| 6 | ~0.17 | ~0.08 | ~0.18 | ~0.00 | ~0.45 |\\n| 10 | ~0.16 | ~0.09 | ~0.17 | ~0.00 | ~0.62 |\\n| 12 | ~0.15 | ~0.09 | ~0.16 | ~0.00 | ~0.65 |\\n| 14 | ~0.09 | ~0.07 | ~0.10 | ~−0.02 | ~0.82 |\"},{\"panel_id\":\"b\",\"text\":\"| Modification step duration (s) | Al₂O₃ (nm/cyc) | HfO₂ (nm/cyc) | AlNₓ (nm/cyc) |\\n|---|---|---|---|\\n| 0 | ~0.02 | ~0.01 | ~0.02 |\\n| 4 | ~0.15 | ~0.07 | ~0.17 |\\n| 6 | ~0.17 | ~0.09 | ~0.19 |\\n| 10 | ~0.16 | ~0.10 | ~0.19 |\\n| 12 | ~0.16 | ~0.10 | ~0.18 |\\n| 14 | ~0.08 | ~0.06 | ~0.10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch ratio of different materials such as Al2O3, HfO2, AlNx, TiN, SiO2, is analyzed as a function of modification step duration.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch rate increases for all materials except for SiO2 up to approximately 5s, after which remains constant until 12s before finally decreasing. In contrast, the etch ratio of SiO2 depend on the duration of the modification step.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiO2, and TiN\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Using SiO2 enables higher etch ratios to be achieved in a shorter amount of tiem.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For AL2O3, HFO2, and AINx, the etch rate rises rapidly and peaks around 6-8 seconds. It then falls off. TiN's etch rate remains low/inactive across the whole duration. SiO2's etc rate rises throughout the whole duration range.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"a2: TiN\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiO2 (highest etch rate by modification step t = 0)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Al2O3, HfO2, and AlNx show an ALE window. Their etch rate rises with increasing modification time and then becomes nearly constant, indicating self-limiting, surface-saturation behavior characteristic of ALE. SiO2 does not show a clear window because its etch rate keeps increasing with time, and TiN does not because it is essentially not etched.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Al2O3/TiN, HfO2/TiN, AlNx/TiN.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 5 and 12 seconds; Al2O3, HfO2 and AlNx.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"According to the authors, this is most likely due to the difference in volatility between the formed products: the sublimation point of titanium fluoride is at 284 ◦C and the boiling point of silicon-fluoride is -86 ◦C. Titanium fluoride is much less volatile, which makes etching more difficult and the etch rate slower. The sputtering rate of argon ions on SiO2 is also two to three times higher than that of the other studies materials, which adds to the etch rate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Although insignificant, the minimal etching is attributed to sputtering by argon ions.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For SiO2 the etch rate increases linearly with modification step duration, for other materials it is more complex\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With the increase of modification step duration, the etch rate of Al2O3, AlNx and HfO2 reaches saturation, providing the ALE window. Further rise of modification step leads to the decrease of the etch rate due to too thick film deposition\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the modification time gives the activating chemicals more time to react with the surface, breaking more bonds and making the material easier to remove. This creates a thicker or more reactive modified layer, which leads to a higher etch rate. However, this effect eventually levels off once the surface is fully saturated.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HfO₂\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"SiO2 exhibits continuously increasing etch rate because silicon fluoride (SiF4) desorbs easily at lower temperatures, making it easily removed even with relatively low ion energy bombardment. In contrast, TiN shows virtually no etching because titanium fluoride has a much higher sublimation point, making desorption of reaction products extremely difficult at the process conditions used. This difference in etch behavior provides good selectivity for etching Al2O3, AlNx, and HfO2 over a TiN hard mask.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"AlNx\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 5-6 seconds\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Highest: SiO₂ (~0.82). \\nLowest: TiN (~0).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"SiO2 has a way higher etch rate than for example HfO2, at 15 s of modification duration. This indicates that SiO2, at least partially, can selectively be etch with respect to HfO2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN does not etch for any modification duration.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"5 s of modification duration is most likely used as this would have similar etch results as longer times, but reduces the processing time.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No there is continuous etching. For all three materials the etch rate is non-zero at 0 s modification duration.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At short modification durations, the surface is only partially covered by the fluorocarbon film, resulting in very low etch rates due to insufficient surface activation. As the modification time increases, a more complete reactive layer forms, enabling efficient ion-assisted reactions during the activation step and causing the etch rate to rise. Beyond an optimal duration, the etch rate saturates, reflecting self-limiting behavior, and may slightly decrease at longer times due to excessive film thickness hindering ion penetration and surface reaction efficiency.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Al2O3, HfO2, AINx\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At modification step duration of 5–12 seconds.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate of Al2O3, AlNx and HfO2 with rise of modification step to 12s lead to the decrease of the etch rate going out of saturation\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- AlNx: shows the highest etch-rate increase with duration.\\n- Al₂O₃: displays a moderate increase with duration.\\n- HfO₂: increases more slowly and remains the lowest of the three across the range.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. \\n Al₂O₃ is not suitable for a process that must be highly precise and insensitive to modification-step duration.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All three materials show similar behavior with initial etch rate increase, followed by a plateau at 5-12 seconds representing the ALE window. After 12 seconds, the etch rate decreases. This self-limiting plateau demonstrates atomic layer etching behavior.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"AlNₓ reaches its maximum etch rate earliest, around 6–8 s, followed by Al₂O₃ at roughly 8–10 s, while HfO₂ peaks later at about 10–12 s. This ordering suggests different kinetics for forming the modified surface state that enables removal, with HfO₂ requiring longer modification to reach maximum effectiveness.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Presence of an etch-rate saturation plateau with increasing modification time, Formation of a clear ALE window at intermediate modification durations, Reduced sensitivity to argon sputtering effects, Ability to form a self-limiting modified surface layer\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_16_fig_5.jpg","caption":"Fig. 5. The etch rate over activation step duration. Negative values correspond to film formation.","id":"train/atomic-layer-etching/experimental-usecase/16/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/16/fig_5","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/Selective atomic layer etching of Al2O3, AlNx and HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":689,"height":434,"image_format":"jpeg","image_sha256":"873a06926fe98b1e93ec14cd7b5192cf73ca509a1ee6dd3d58fd48fab3a76bb2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":689,"height":434}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Etch rate as a function of activation step duration shows a common negative starting value near −0.5 nm/cycle at 0 s for all materials, indicating net film formation without activation. As activation time increases, material-dependent removal emerges. SiO₂ exhibits the strongest response, increasing monotonically to ~0.7 nm/cycle at 20 s. AlNₓ and Al₂O₃ show intermediate increases, reaching ~0.3 nm/cycle at 20 s, while HfO₂ increases only modestly. TiN remains near zero across the range, indicating strong resistance to activation-induced removal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Activation step duration (s) | Al2O3 etch rate (nm/cyc) | HfO2 etch rate (nm/cyc) | AlNx etch rate (nm/cyc) | TiN etch rate (nm/cyc) | SiO2 etch rate (nm/cyc) |\\n|---|---|---|---|---|---|\\n| 0 | ~-0.55 | ~-0.55 | ~-0.55 | ~-0.55 | ~-0.55 |\\n| 5 | ~0.00 | ~0.00 | ~0.00 | ~0.00 | ~0.40 |\\n| 10 | ~0.18 | ~0.10 | ~0.18 | ~0.00 | ~0.55 |\\n| 20 | ~0.30 | ~0.15 | ~0.30 | ~0.05 | ~0.72 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They are studying the etch rate (nm/cyc) as a function of the activation step duration (s) for the different materials used in the process (Al2O3, HfO2, AlNx, TiN, SiO2)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, because all materials demonstrate film deposition when activation step duration is less than 5s (2.5s for SiO2).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No it does not seem to matter. Both Al2O3 and AlNx have similar etch results.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes it is possible, SiO2 can be selectively etched wrt to all other materials at an activation time of 5 seconds.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, there is an increase in etch rate for increasing activation time\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"20 s for HfO2 and 10 s for Al2O3.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiO2 at 20 s with ≈ 0.70nm/cycle.\\nEvidence: Its marker/line is highest among the series at 20 s.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch-per-cycle response depends on material. SiO2 shows the steepest increase with activation time, while AlNx and Al2O3 rise more modestly and TiN remains near zero. By 20s, the ranking is SiO2 ≫ AlNx ~ Al2O3 ≫ HfO2≫ TiN. This indicates [concise implication about selectivity or sensitivity to activation] grounded in the plotted slopes.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Stop layer: TiN — its curve stays ~0 across the range (slope ≈ 0).\\nLongest activation to achieve net removal: TiN— remains negative or near 0 until 10s, then crosses into positive etch.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At zero activation, polymer deposits at -0.5 nm/cycle on all surfaces. Increasing activation duration causes etch rates to shift from negative to positive as ions first remove polymer then activate material etching. The gradual increase in etch rate with activation time reflects the sequential sputtering and surface reaction activation processes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 0.5 nm/cycle (i.e. negative etch rate of -0.5 nm/cycle)\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is 0.16 nm/cycle\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No. The reason is that the deposited polymer film must first be sputtered away before material etching can begin.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The activation step duration directly controls the etch rate by determining the extent of surface modification. At very short durations, incomplete reactions lead to net film formation, but as duration increases, the surface becomes fully saturated, allowing the etch rate to rise sharply. Once the surface is completely modified, the process reaches a self-limiting plateau where further increases in activation time no longer affect the etch rate.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1.\\tAt very short durations, film formation (negative etch rate) occurs.\\n2.\\tAs duration increases, the process transitions from net deposition to net etching.\\n3.\\tAt intermediate durations, the etch rate rises sharply.\\n4.\\tAt long durations, the etch rate plateaus at a higher value.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes . HfO₂ etches more slowly than Al₂O₃ because its higher sputtering threshold reduces ion-induced material removal.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After 5s of activation steps, the etch rate begins to increase for all materials except TiN\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the etch rate remains low and only goes up to 0.02nm/cycle after 20s of activation steps\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, Al2O3 and AlN show similar behaviour in etch rate vs activation steps and also have similar etch rates.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"SiO2 requires the least number of activation as the etch rate increases after ~2.5s of activation step duration.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A negative etch rate corresponds to film growth/formation, rather than etching.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HfO2 has a higher sputtering threshold.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is probably due to the non-monoenergetic ion distribution function. The incline observed in the ALE window for the activation step may hamper reproducibility.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A strong time-dependent increase in etch rate indicates that more volatile products are generated as the activation time increases. Almost no volatile species are produced during the activation of TiN, since its etch rate remains essentially zero over the entire activation-time range. In contrast, SiO₂ is the most volatile, exhibiting the highest etch rate and a continuous rise with activation time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At around 5 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 1 nm thick (0.5 nm/cycle).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Al₂O₃, HfO₂, and AlNₓ all show a shallow rise in etch rate as the activation step becomes increases. TiN stays close to zero throughout, only moving slightly upward from a negative value at short times. SiO₂ increases far more strongly than the other materials, becoming the most rapidly etched surface at longer activation durations.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiO2\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Al2O3, HfO2, SiO2\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Zero activation: polymer film deposition (~0.5 nm) results in negative etch rate, Early activation (5–10 s): transition from deposition to etching, Moderate activation (10–15 s): onset of positive etch rate and initiation of steady etching, Longer activation (15–20 s): gradual increase in etch rate, no clear plateau\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.0 nm/cycle for both materials (transition point from deposition to etching).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"HfO₂ shows a slower increase in etch rate compared to Al₂O₃, with the slope of the etch rate approximately half that of Al₂O₃. This difference arises from HfO₂’s higher sputtering threshold and stronger resistance to argon ion bombardment, which reduces etching efficiency and delays the onset of steady material removal, highlighting how intrinsic material properties influence ALE performance.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_16_fig_6.jpg","caption":"Fig. 6. The etch depth over the number of cycles in ALE process (activation step duration is $10~\\mathrm{s}$ ).","id":"train/atomic-layer-etching/experimental-usecase/16/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/16/fig_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/Selective atomic layer etching of Al2O3, AlNx and HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":698,"height":556,"image_format":"jpeg","image_sha256":"26b84b84f0ecb72b7f97dbf259e00332f800ffd8ea39552adb2d40b3d009e63c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":698,"height":556}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Etch depth increases approximately linearly with the number of ALE cycles for most materials, indicating a near-constant etch-per-cycle under a 10 s activation step. SiO₂ exhibits the steepest slope and the largest accumulated etch depth, reaching ~27 nm after 40 cycles. AlNₓ and Al₂O₃ show moderate linear removal, while HfO₂ etches slowly. TiN shows essentially no measurable etch depth across all cycles, indicating strong resistance to the ALE process. Dashed lines represent linear fits to the experimental data.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycles | Al2O3 etch depth (nm) | HfO2 etch depth (nm) | AlNx etch depth (nm) | TiN etch depth (nm) | SiO2 etch depth (nm) |\\n|---|---|---|---|---|---|\\n| 0 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 15 | ~2.0 | ~1.5 | ~3.0 | ~0.0 | ~6.0 |\\n| 20 | ~3.5 | ~2.5 | ~5.0 | ~0.0 | ~12.0 |\\n| 30 | ~5.0 | ~3.2 | ~6.0 | ~0.0 | ~20.0 |\\n| 40 | ~6.0 | ~4.0 | ~7.5 | ~0.0 | ~27.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch depth as a function of the number of cycles, for different materials.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN, because the etch depth value is close to 0, regardless of the number of cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, because, unlike other materials, the etch depth continues to increase with each cycle. However, after 30 cycles, the etch depth appears to remain constant for Al2O2, HfO3, AlNx, and TiN.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiO2 is preferred because its slope is steeper than that of the other materials. This means that a greater etching depth can be achieved in the same number of cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"SiO2 does not show that good of a fit. This suggests that, if the characterization is performed well, that the process is not that controlled. This in turn suggests that perfect ALE is not acquired.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"HfO2 shows the highest etch resistivity as for this material, the total etch depth is the lowest.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Al2O3 and AlNx.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"30 cycles are required.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes, approximately linear for Al2O3, HfO2, AlNx, SiO2; TiN shows flat/near-zero change.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"“SiO2”\\nEvidence: “At 40 cycles it has the largest etch depth compared with other materials.\\\"\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"EPC depends strongly on material. SiO2 has the highest slope, followed by AlNx and Al2O3, while HfO2 is low and TiN is ≈0. This ranking indicates, how etch depth varies with increasing number of cycles.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TiN is the best candidate for an etch-stop under these ALE conditions. Its etch depth stays zero after 40 cycles, giving an etch-per-cycle of 0 nm/cycle. In the plot, its markers lie near the x-axis and the dashed fit has nearly zero slope, whereas other materials show measurable slopes and larger depths. Therefore, TiN would maintain thickness during etching and serve as an effective mask/stop layer.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Al₂O₃ – black squares\\n\\nHfO₂ – red circles\\n\\nAlNₓ – blue triangles\\n\\nSiO₂ – black asterisks\\n\\nTiN – red crosses\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10 seconds.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly, 5 to 6 nm.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process doesn't drift quickly with time. That allows predictable depth control just by choosing the cycle number.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the data in Figure 6 confirms the process's adherence to the self-limiting mechanism, as evidenced by the perfectly linear relationship between etch depth and the number of cycles. \\nThis linearity is governed by material-specific properties, including the surface's ability to saturate during the activation step and the volatility of the etched byproducts during the removal step. \\nFor the material tested here, these properties are well-suited to the ALE process, whereas materials with poor surface saturation or low byproduct volatility would show a sub-linear, reaction-limited etch rate.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The linear relationship is significant because it confirms the process is self-limiting itself , highly controllable and predictable. \\nIn a perfect ALE process, each cycle removes exactly one layer of atoms and then stops on its own. It cannot continue etching deeper, no matter how long you leave the reactants there. This trend is very well observed for most of the materials studied here.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1) The Etch Per Cycle (EPC) for various different materials\\n2) The total etch depth for a given number of cycles.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes \\n(This trend allows device manufacutures to achieve atomic-scale precision by simply controlling the number of cycles. Also, they can reliably etch to a target depth with minimal risk of damaging the underlying substrate, which is crucial for manufacturing advanced semiconductor devices.)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"From the graph, SiO2 has higher etch rate compared to other materials\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch depth has a linearly dependence with the number of cycles\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"From the graph, it is evident that TiN is not etched at all, while SiO2 has high etch rate, therefore with the current process, SiO2 could be selectively etched from a target containing both TiN and SiO2 films.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10 seconds for both steps each.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.16, 0.20, and 0.11 nm per cycle, respectively.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 30, 40, and 20, respectively.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The measured etch rates for Al2O3, AlNx and HfO2 are comparable to the Al-O bond length of 0.169 nm, which means that the ALE process has close to single-atom precision.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TiN would make the best mask. From the graph, its etch depth stays close to zero even after 40 cycles, meaning it is almost not etched at all. It can protect underlying layers while the other materials are removed.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 24 - 25 cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SiO2, AlNx, Al2O3, HfO2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiO2 (largest fluctuations in etch depth).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The five materials show noticeably different slopes. SiO₂ increases the most rapidly and reaches the largest etch depth. AlNₓ, Al₂O₃, and HfO₂ all rise more moderately, with HfO₂ showing the slowest increase of the three. TiN remains nearly flat across the entire range, with only a slight upward shift at the highest cycle count.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SiO2, AINx, Al2O3, HfO2\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Highest: AlNₓ (0.20 nm/cycle), Medium: Al₂O₃ (0.16 nm/cycle), HfO₂ (0.11 nm/cycle), Lowest: TiN (0.006 nm/cycle), Poor repeatability: SiO₂ (0.62 nm/cycle)\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"8 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The chart shows that etch depth increases linearly with cycles, but the rate differs strongly between materials. Al₂O₃, AlNₓ, and HfO₂ exhibit controlled, moderate etch rates, indicating effective ALE behavior. TiN shows almost no etching, confirming resistance to the process, while SiO₂ has high variability, indicating poor repeatability. This illustrates that the ALE process can selectively remove material layer-by-layer depending on the chemical and physical properties of each substrate, highlighting the importance of tuning parameters for selective etching.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_11.jpg","caption":"Figure 11 displays the time evolution of the HF exposure together with the $\\mathrm{H}_2\\mathrm{S}^+$ ion signal at $m / z$ 34 produced by the","id":"train/atomic-layer-etching/experimental-usecase/23/figure_11","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_11","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":650,"height":570,"image_format":"jpeg","image_sha256":"48905067cd54a2fab10fff153a34a7c983a7049a624d7287df01951d22183819","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":647,"height":566}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multi-line chart shows how the etch rate (Å/cycle) of ZnS ALD changes with temperature for depositions carried out at 100 °C, 200 °C, and 300 °C. As the temperature increases, the etch rate also increases.The film deposited at 100 °C etches the fastest, while the film deposited at 300 °C etches the slowest at any given temperature. This implies that films deposited at higher temperatures are denser or chemically more robust.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Etch Rate (Å/cycle) | Condition |\\n|------------------|----------------------|------------------|\\n| 225 | 1.40 | ZnS ALD 100°C |\\n| 225 | 1.02 | ZnS ALD 200°C |\\n| 225 | 0.77 | ZnS ALD 300°C |\\n| 250 | 1.80 | ZnS ALD 100°C |\\n| 250 | 1.44 | ZnS ALD 200°C |\\n| 250 | 1.33 | ZnS ALD 300°C |\\n| 275 | 2.00 | ZnS ALD 100°C |\\n| 275 | 1.75 | ZnS ALD 200°C |\\n| 275 | 1.65 | ZnS ALD 300°C |\\n| 300 | 2.11 | ZnS ALD 100°C |\\n| 300 | 1.98 | ZnS ALD 200°C |\\n| 300 | 1.85 | ZnS ALD 300°C |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The setpoint should be 300 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The higher etch rate for the 100 °C film (black curve) indicates it is structurally weaker and less dense than the 300 °C film. The \\\"looser\\\" atomic network of the low-temperature film allows the etchant species to diffuse and react more readily, whereas the 300 °C film is more crystalline and compact, offering greater resistance to chemical attack.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Films deposited at lower temperatures (100 °C) typically have lower density and higher impurity content (e.g., unreacted ligands).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At high etch temperatures (300 °C), the etch rates for all films begin to converge (gap narrows to ~0.2 Å/cycle ). This suggests the process is transitioning from a surface-reaction-limited regime (where film density/quality dominates) to a mass-transport-limited regime (or saturation). In this regime, the supply of etchant or the desorption of byproducts becomes the bottleneck, making the intrinsic quality of the film less of a differentiator than it is at lower temperatures.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_12.jpg","caption":"Figure 12. $\\mathrm{ZnS}$ etch rates vs temperature for $\\mathrm{ZnS}$ ALD films grown at different temperatures.","id":"train/atomic-layer-etching/experimental-usecase/23/figure_12","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_12","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":669,"height":558,"image_format":"jpeg","image_sha256":"bcd140015b59ad8c8b4bc8eea4b848b59dcb1ff3dd436ff57ef6d5431f9247eb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":665,"height":554}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multi-line chart shows how the etch rate (Å/cycle) of ZnS ALD changes with HF pressures for depositions carried out at TMA pressures of 20 m.Torr and 200 m.Torr. As the pressure increases till 50, the etch rate increases and plateus.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF Pressure (mTorr) | Etch Rate (Å/cycle) | TMA Pressure |\\n|----------------------|----------------------|--------------|\\n| 0 | 0.00 | 20 mTorr |\\n| 0 | 0.00 | 200 mTorr |\\n| 50 | 1.65 | 20 mTorr |\\n| 50 | 2.00 | 200 mTorr |\\n| 100 | 1.75 | 20 mTorr |\\n| 100 | 2.24 | 200 mTorr |\\n| 150 | 1.81 | 20 mTorr |\\n| 150 | 2.43 | 200 mTorr |\\n| 200 | 1.83 | 20 mTorr |\\n| 200 | 2.43 | 200 mTorr |\\n| 250 | 1.83 | 20 mTorr |\\n| 250 | 2.46 | 200 mTorr |\\n| 300 | 1.83 | 20 mTorr |\\n| 300 | 2.48 | 200 mTorr |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"First, the TMA pressure must be set and stabilized at 200 mTorr. Then, the HF pressure must be set and stabilized at 50 mTorr for the duration of the ALE cycle before measuring the etch depth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"200 mTorr TMA is better for throughput as it gives a higher etch rate. The trade-off is higher precursor consumption and potentially more stringent pumping requirements to maintain process pressure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plateau occurs because all available surface reaction sites become saturated with HF-derived species within the pulse time. This reveals the self-limiting nature of the HF half-reaction, a defining characteristic of ideal ALE.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies the tool requires excellent pressure control and uniformity for both precursors. Any drift or non-uniformity in pressure will directly translate into etch rate variations, affecting device yield and performance consistency.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_6.jpg","caption":"Figure 6. Etch rate during $\\mathrm{ZnS}$ ALE vs precursor exposure time at $300^{\\circ}\\mathrm{C}$ . The HF pressure was $40\\mathrm{mTorr}$ and the TMA pressure was $45\\mathrm{mTorr}$ . Initial $\\mathrm{ZnS}$ ALE films were grown at $100^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/23/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":666,"height":561,"image_format":"jpeg","image_sha256":"6f88d1b0c4648983c5399bf758d71256a04938a5e55929eef60c4cd4108fd5ec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":662,"height":556}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This muliple line chart shows the etch rate per cycle (Å/cycle) as a function of precursor exposure time for two different ALE process conditions: one varying HF exposure time (x) with fixed TMA time (4 s), and the other varying TMA exposure time (y) with fixed HF time (1 s). Both show a rapid increase in etch rate with exposure time up to ~2 seconds, followed by a saturation plateau, indicating self-limiting surface reactions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Precursor Exposure Time (s) | Etch Rate (Å/cycle) | HF-Purging-TMA-Purging |\\n|-----------------------------|----------------------|-----------------------------|\\n| 0 | 0 | x-30-4-30 (s) |\\n| 0 | 0.006 | 1-30-y-30 (s) |\\n| 1 | 2.08 | x-30-4-30 (s) |\\n| 1 | 0.57 | 1-30-y-30 (s) |\\n| 2 | 2.02 | x-30-4-30 (s) |\\n| 2 | 1.8 | 1-30-y-30 (s) |\\n| 3 | 2.03 | x-30-4-30 (s) |\\n| 3 | 2.03 | 1-30-y-30 (s) |\\n| 4 | 2.05 | x-30-4-30 (s) |\\n| 4 | 2.05 | 1-30-y-30 (s) |\\n| 5 | | x-30-4-30 (s) |\\n| 5 | | 1-30-y-30 (s) |\\n| 6 | 2.04 | x-30-4-30 (s) |\\n| 6 | 2.05 | 1-30-y-30 (s) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the solid red line (x-30-4-30): 1) HF exposure for ‘x’ seconds → 2) Purge for 30 s → 3) TMA exposure for 4 s → 4) Purge for 30 s.\\nFor the blue line (1-30-y-30): 1) HF exposure for 1 s → 2) Purge for 30 s → 3) TMA exposure for ‘y’ seconds → 4) Purge for 30 s.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TMA requires a longer exposure to reach saturation (etch rate plateaus after ~3 s) compared to HF (~1 s). This implies that the TMA half-reaction is kinetically slower, so process optimization must balance sufficient TMA exposure for complete etching against throughput, as longer TMA times increase cycle time.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The saturation indicates that the surface reaction is self-limiting; after ~2 seconds, all available surface sites have reacted. This reveals that the etching mechanism is governed by monolayer-level surface saturation rather than continuous etching, which is the hallmark of ideal ALE.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It ensures robust uniformity despite inevitable local variations in precursor flux or exposure time. As long as the exposure time exceeds the saturation threshold everywhere on the wafer, the etch rate will be identical, eliminating thickness variations caused by flow non-uniformities.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_28_fig2.jpg","caption":"FIG.2. (a) SIMS depth profiles of F as a function of the sputtering time after $\\mathrm{NF}_3$ plasma treatment for $60~\\mathrm{s}$ at 0, 10, 50, and $100W$ b) F 1s XPS peak from $\\mathrm{Al}_2\\mathrm{O}_3$ films; and (c) saturation of atomic fractions as $\\mathrm{NF}_3$ plasma exposure time at $10W$ and $100^{\\circ}C$","id":"train/atomic-layer-etching/experimental-usecase/28/fig2","sample_id":"atomic-layer-etching/experimental-usecase/28/fig2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/Atomic layer etching of Al2O3 with NF3 plasma fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":658,"height":1528,"image_format":"jpeg","image_sha256":"762d9e5088c12f0da2c44d7d29c314d9a78596c427499a5acbe82bea3709f92d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":102,"y":10,"width":556,"height":478},{"panel_id":"b","x":111,"y":522,"width":542,"height":470},{"panel_id":"c","x":72,"y":1026,"width":583,"height":495}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the intensity of F- at different depths for various powers (0, 10, 50, 100 W). Increasing power leads to penetration of the F⁻ deeper into the film.\"},{\"panel_id\":\"b\",\"text\":\"The XP-spectrum t displays the intensity of F 1s peaks at different times (Reference, 5s, 20s, 50s, 60s) during plasma fluorination. The Al–F peak grows strongly after fluorination and then changes more modestly at longer times.\"},{\"panel_id\":\"c\",\"text\":\"The chart illustrates the atomic percentage changes of O1 s, Al 2p, F 1s, and C 1s with increasing plasma fluorination time. O, Al and C decrease rapidly and then plateau, F increases rapidly and then plateaus.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Depth (nm) | 0W: Intensity (arb.units) | 10W: Intensity (arb.units) | 50W: Intensity (arb.units) | 100W: Intensity (arb.units) |\\n|---|---|---|---|---|\\n| 0 | 2 | 65 | 63 | 66 |\\n| 1 | 2| 43| 52 | 60 |\\n| 2 | 2 | 15 | 15 | 20 |\\n| 3 | 2 | 8 | 10 | 11 |\\n| 4 | 2 | 6 | 8 | 7 |\"},{\"panel_id\":\"b\",\"text\":\"| Measurement | Peak: Intensity (arb.units) | Peak: Binding energy [eV] | \\n|---|---|---|\\n| Reference | 2.15 | 685 | \\n| 5s | 29 | 686.1 | \\n| 20s| 38 | 686.4 | \\n| 50s| 42 | 686.4 | \\n| 60s| 42 | 686.4 |\"},{\"panel_id\":\"c\",\"text\":\"| Plasma fluorination time (s) | Atomic % O 1s | Atomic % Al 2p | Atomic % F 1s | Atomic % C 1s |\\n|---|---|---|---|---|\\n| 0 | 52.1% | 28.8% | 0% | 18.5% |\\n| 5 | 42% | 27.9% | 21.2% | 9% |\\n| 20 | 38.7% | 27% | 21.8% | 10.8% |\\n| 50 | 37.5% | 27.9% | 24.9% | 8.6% |\\n| 60 | 38.4% | 27.9% | 25.3% | 8.1% |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The depth profiles indicate that increasing RF power leads to greater fluorine incorporation and a deeper fluorinated layer. This is attributed to higher RF power producing a larger flux of reactive fluorine radicals in the NF₃ plasma, which enhances fluorination. The fluorine signal still decreases with depth because the formed fluorinated layer acts as a diffusion barrier and hinders further transport.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approx. 50 s (F 1s peak stops increasing).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Noticeable binding energy shift suggest that the dominant bonding environment might be evolving between 5s and 20s (consistent with the probed surface becoming more uniformly fluorinated).\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Fluorination does not appear to modify the entire region probed by XPS. The F atomic % increases but reaches a plateau while O remains predominant. It is consistent with a picture of a fluorine-enriched surface layers over underlying oxide that is still largely unfluorinated.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_28_fig_4.jpg","caption":"FIG. 4. (a) TMA exposure time at 290, 300, and $330^{\\circ}\\mathrm{C}$ of the removal step; (b) EPC using $\\mathrm{NF}_3 / \\mathrm{TMA} = 60 / 30\\mathrm{s}$ at the range of $250 - 480^{\\circ}\\mathrm{C}$ of the removal step; and (c) C 1s XPS peak from $\\mathrm{Al}_2\\mathrm{O}_3$ films after $\\mathrm{NF}_3$ plasma exposure time at $10\\mathrm{W}$ and $100^{\\circ}\\mathrm{C}$ and after removal step at an elevated temperature range of $280 - 480^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/28/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/28/fig_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/Atomic layer etching of Al2O3 with NF3 plasma fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":650,"height":1502,"image_format":"jpeg","image_sha256":"28f4b09264c023ab82c335565ab0372c7146c21bbfcaf4229bb31cf298e0e24f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":62,"y":5,"width":585,"height":481},{"panel_id":"b","x":72,"y":498,"width":577,"height":492},{"panel_id":"c","x":110,"y":1016,"width":536,"height":472}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch per cycle as a function of TMA exposure time shows a rapid rise and then saturation, with 300 °C removal-step temperature highest etch rate.\"},{\"panel_id\":\"b\",\"text\":\"The etch per cycle versus removal-step temperature increases sharply from low temperature, peaks around 300 °C, and then decreases at higher temperatures,\"},{\"panel_id\":\"c\",\"text\":\"XP-Spectrum shows that the peak intensity of C-C and C-Fx species increase with temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TMA exposure time (s) | Temperature (°C) | Etch per cycle (nm/cycle) |\\n|---|---|---|\\n| 0 | 290 | 0.0 |\\n| 0 | 300 | 0.0 |\\n| 0 | 330 | 0.0 |\\n| 10 | 290 | 0.097 |\\n| 10 | 300 | 0.17 |\\n| 10 | 330 | 0.14 |\\n| 20 | 290 | 0.17 |\\n| 20 | 300 | 0.25 |\\n| 20 | 330 | 0.23 |\\n| 30 | 290 | 0.20 |\\n| 30 | 300 | 0.30 |\\n| 30 | 330 | 0.27 |\\n| 40 | 290 | 0.21 |\\n| 40 | 300 | 0.30 |\\n| 40 | 330 | 0.27 |\"},{\"panel_id\":\"b\",\"text\":\"| Removal step temperature (°C) | Etch per cycle (nm/cycle) |\\n|---|---|\\n| 250 | 0.0 |\\n| 275 | 0.09 |\\n| 290 | 0.20 |\\n| 300 | 0.3 |\\n| 330 | 0.27 |\\n| 400 | 0.20 |\\n| 480 | 0.0 |\"},{\"panel_id\":\"c\",\"text\":\"| Measurement | Binding energy [eV] | Intensity (a.u.) | Assignment |\\n|---|---|---|---|\\n| NF3 plasma | 284.7 | 22 | C-C |\\n| NF3 plasma | 289.0 | 5 | C-Fx|\\n| 280 °C | 284.7 | 28 | C-C |\\n| 280 °C | 288.9 | 5 | C-Fx|\\n| 290 °C | 284.7 | 26 | C-C |\\n| 290 °C | 288.8 |4 | C-Fx|\\n| 300 °C | 284.7 | 35 | C-C |\\n| 300 °C | 288.8 | 5 | C-Fx|\\n| 400 °C | 284.7 | 51 | C-C |\\n| 400 °C | 288.7 | 9 | C-Fx |\\n| 480 °C | 284.7 | 58 | C-C |\\n| 480 °C | 288.7 | 10 | C-Fx |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"30 s (etch per cycle plateaus after 30 s).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C (fastest etching)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The EPC curve has a volcano-like shape because different mechanisms dominate at different temperatures. At low removal-step temperature, the etch per cycle is low because the ligand-exchange reaction between TMA and the fluorinated film is likely kinetically hindered. As the temperature increases into the intermediate range, this reaction proceeds more efficiently, leading to a higher EPC. At the highest temperatures, the EPC drops back to low values, because TMA might be thermally decomposing, which hinders the reaction.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At the high removal-step temperatures (400 °C and 480 °C ), the C 1s spectra show a much stronger C–C peak, compared to lower temperatures. This suggests that non-volatile carbon residues are accumulating on the surface with higher temperatures. Since TMA is the only significant source of carbon in the process, this strongly hints thermal decomposition of TMA at high temperatures.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_28_fig_5.jpg","caption":"FIG. 5. (a) Depth comparison of each half cycle of the fluorination step for $60 \\text{s}$ $\\mathrm{NF}_3$ plasma at 10, 50, and $100 \\text{W}$ and a temperature of $100^{\\circ}\\text{C}$ , and the removal step with TMA for $30 \\text{s}$ at an elevated temperature of $300^{\\circ}\\text{C}$ and (b) surface atomic fraction tendency at each half cycle at $10 \\text{W}$ .","id":"train/atomic-layer-etching/experimental-usecase/28/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/28/fig_5","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/Atomic layer etching of Al2O3 with NF3 plasma fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":663,"height":1000,"image_format":"jpeg","image_sha256":"73f6812f2da020ff72aa0b331d4f2c26db5e979ac5658118e5653d901eb2894f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":72,"y":10,"width":588,"height":476},{"panel_id":"b","x":72,"y":522,"width":587,"height":477}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between RF power and the depth of fluorinated layer and etched depth, demonstrating both depths increasing with power, with the fluorinated layer always thicker than the removed thickness.\"},{\"panel_id\":\"b\",\"text\":\"The chart displays the atomic percentage of O1s, Al2p, F1s, and C1s across NF3 and TMA half-cycles. Percentage of fluorine is increasing after NF₃, then decreasing after TMA.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| RF power (W) | Fluorinated layer depth (nm) | Etched depth (nm) |\\n|---|---|---|\\n| 0 | 0.0 | 0.0 |\\n| 10 | 0.79 | 0.3 |\\n| 50 | 0.95 | 0.38 |\\n| 100 | 1.14 | 0.43 |\"},{\"panel_id\":\"b\",\"text\":\"| Cycle number | Step |O 1s | Al 2p | F 1s | C 1s |\\n|---|---|---|---|---|---|\\n| 0 | Start NF3 | 51 | 29 | 0 |18 |\\n| 0.5 | Start TMA | 38 | 29 | 26 | 9 |\\n| 1 | Start NF3 | 44 | 30 | 15 | 10 |\\n| 1.5 | Start TMA | 39 | 26 | 25 | 9 |\\n| 2 | Start NF3 | 48 | 29 | 14 | 9 |\\n| 2.5 | Start TMA | 38 | 28 | 25 | 9 |\\n| 3 | Start NF3 | 48 | 30 | 13 | 9 |\\n| 3.5 | Start TMA | 38 | 28 | 26 | 9 |\\n| 4 | End TMA | 46 | 30 | 13 | 11 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA is not removing fluorine completely, as the etched depth is always smaller than the fluorinated-layer depth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50 W.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"NF₃ acts as the fluorination step: during the NF₃ half-cycles the F1s signal rises, showing that the surface is converted to an F-rich layer. TMA then serves as the removal step: in the TMA half-cycles the F1s signal decreases. This is consistent with TMA consuming surface fluorine to form volatile Al-containing products.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_29_fig_7.jpg","caption":"FIG. 7. Normalized NBE signal intensity of GaN underneath the AlGaN film: (a) after the BT step, (b) after exposure to $\\mathrm{Cl}_2$ plasma, and (c) after exposure to Ar plasma as a function of plasma exposure time.","id":"train/atomic-layer-etching/experimental-usecase/29/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/29/fig_7","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/Atomic layer etching of AlGaN using Cl2 and Ar gas.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":539,"height":528,"image_format":"jpeg","image_sha256":"366ab560be5b634b9b37c977a8aa6d66a3f236ca38bd633acec48c147a00d9df","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":540,"height":528}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The normalized NBE signal intensity decreases with increasing plasma exposure time for both Ar plasma and Cl2 plasma.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Plasma Exposure Time (s) | Normalized NBE Signal Intensity (a.u.) Cl2 plasma| Normalized NBE Signal Intensity (a.u.) Ar plasma|\\n|---|---|---|\\n| 0 | 1.0 | 1.0|\\n| 50 | 0.5 |0.7|\\n| 100 | 0.45 |0.6|\\n| 200 | 0.35 |0.5|\\n| 300 | 0.25 |0.35|\\n| 350 | 0.25 |0.3|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both plasmas inflict ion bombardment, but only the Cl2 plasma also has a chemical effect on the substrate.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Especially for the Cl2 plasma curve there seems to be saturating behaviour, so yes.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 70 %.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.3\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_33_fig_7.jpg","caption":"FIG. 7. Depth profiles of atomic concentrations of Ti, N, O, and C in the pristine TiN film. The thickness of the native oxide was approximately $3\\mathrm{nm}$ .","id":"train/atomic-layer-etching/experimental-usecase/33/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/33/fig_7","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/Atomic layer etching of titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":670,"height":538,"image_format":"jpeg","image_sha256":"dd16d306d8b6b91f7f56a8fbdf350b7acea677583ef15f49ba04f48bda9c387f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":0,"width":665,"height":535}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The atomic concentration of Ti, N, O, and C changes over sputtering time, with Ti and N reaching a plateau at 50% while O and C decrease significantly.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sputtering Time (min.) | Atomic Concentration (%) |\\n|---|---|\\n| 0 | Ti: 25, N: 25, O: 28, C: 22 |\\n| 1 | Ti: 44, N: 44, O: 12, C: 0 |\\n| 2 | Ti: 49, N: 46, O: 5, C: 0 |\\n| 3 | Ti: 49, N: 46, O: 5, C: 0 |\\n| 4 | Ti: 49, N: 46, O: 5, C: 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The native oxide is 3 nm thick, the oxygen levels out at 5% after 2 min of etching, so the etch rate is 0.25 angstrom/s.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The measured carbon is advantitious carbon and likely comes from storing in ambient conditions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Ti:N ratio is 1:1.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, there is a constant level of oxygen at around 5%, indicating that there are impurities.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_39_fig_2.jpg","caption":"FIG. 2. (a) EPC vs cycle number with $40 \\text{s} H_{2}$ plasma exposures only (triangles), $40 \\text{s} SF_{6} / Ar$ plasma exposures only (squares), and both half-cycles (circles). All processes occur at $0^{\\circ}C$ . The dashed lines are guides to the eye. (b) EPC versus $H_{2}$ plasma exposure time with $SF_{6} / Ar$ plasma exposure time fixed at $30 \\text{s}$ . (c) EPC versus $SF_{6} / Ar$ plasma exposure time with $H_{2}$ plasma exposure time fixed at $30 \\text{s}$ . The etch rates are observed to saturate with exposure time, demonstrating the self-limiting nature of the process.","id":"train/atomic-layer-etching/experimental-usecase/39/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/39/fig_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/Isotropic atomic layer etching of MgO-doped lithium niobate.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1083,"height":630,"image_format":"jpeg","image_sha256":"e248092abbb544cd9536a98d9918d58d32c70c4a2c53470bade1ddb18d596e9f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":13,"width":583,"height":616},{"panel_id":"b","x":646,"y":8,"width":437,"height":305},{"panel_id":"c","x":647,"y":340,"width":436,"height":290}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Thickness change remains near zero over 50 cycles for H₂-only and SF₆/Ar-only plasma exposures, while the combined H₂+SF₆/Ar sequence produces an approximately linear thickness decrease reaching ~80 nm by 50 cycles.\"},{\"panel_id\":\"b\",\"text\":\"With SF₆/Ar exposure fixed at 30 s, the etch per cycle increases with H₂ plasma exposure time and saturates near ~1.45–1.5 nm/cycle beyond ~40 s.\"},{\"panel_id\":\"c\",\"text\":\"With H₂ exposure fixed at 30 s, the etch per cycle similarly increases with SF₆/Ar exposure time and approaches a plateau near ~1.5–1.6 nm/cycle, indicating saturation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Curve | Number of cycles | Thickness change (nm) |\\n|---|---|---|\\n| H₂ (triangles) | 50 | ~ -1.0 |\\n| SF₆ (squares) | 50 | ~ -2.0 |\\n| H₂ + SF₆ (circles) | 10 | ~ -12.0 |\\n| H₂ + SF₆ (circles) | 20 | ~ -32.0 |\\n| H₂ + SF₆ (circles) | 30 | ~ -51.0 |\\n| H₂ + SF₆ (circles) | 40 | ~ -67.0 |\\n| H₂ + SF₆ (circles) | 50 | ~ -80.0 |\"},{\"panel_id\":\"b\",\"text\":\"| H₂ exposure time (s) | Etch rate (nm/cycle) | \\n|---|---| \\n| 0 | ~0.0 | \\n| 10 | ~1.00 | \\n| 20 | ~1.30 | \\n| 30 | ~1.40 | \\n| 40 | ~1.45 | \\n| 50 | ~1.50 |\"},{\"panel_id\":\"c\",\"text\":\"| SF₆ exposure time (s) | Etch rate (nm/cycle) |\\n|---|---|\\n| 0 | ~0.00 |\\n| 10 | ~1.20 |\\n| 20 | ~1.30 |\\n| 30 | ~1.40 |\\n| 40 | ~1.50 |\\n| 50 | ~1.60 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The H₂-only and SF₆-only conditions show little to no net thickness change over 50 cycles, with both traces staying close to 0 nm. In contrast, the combined H₂+SF₆ sequence produces a large, cumulative thickness decrease that reaches ~80 nm by 50 cycles. The comparison is consistent with effective etching occurring only when both half-cycles are applied in sequence.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Saturation ensures that additional exposure does not increase material removal beyond a fixed amount per cycle. This makes the process insensitive to small timing variations and enables precise, repeatable etch control. Such behavior is a defining requirement for true atomic layer etching.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At approximately 40 s.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_4_fig_2.jpg","caption":"FIG. 2. (a) Energy scan and (b) synergy scan of the ITO ALE process at $150^{\\circ}\\mathrm{C}$ . Error bars in (a) and (b) show standard deviation from the mean, when multiple measurements are done with the same parameters.","id":"train/atomic-layer-etching/experimental-usecase/4/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/4/fig_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/Atomic layer etching of indium tin oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1414,"height":486,"image_format":"jpeg","image_sha256":"86fdde7580780b06a0adc43fd206b0299be6e2cf53fa7681dc7077a7aafc209c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":37,"y":39,"width":647,"height":444},{"panel_id":"b","x":760,"y":41,"width":650,"height":441}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between DC bias and EPC (Å) for two conditions: ALE and Ar milling only.\"},{\"panel_id\":\"b\",\"text\":\"The line chart illustrates the synergy percentage at different DC bias voltages.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| DC bias (-V) | EPC (Å) ALE | EPC (Å) Ar milling only |\\n|---|---|---|\\n| 0 | 0.1 | 0 |\\n| 6 | 0.5 | |\\n| 9 | 1 | 0.1 |\\n| 12 | 1.5 | 0.25 |\\n| 18 | 1.5 | 0.5 |\"},{\"panel_id\":\"b\",\"text\":\"| DC bias (-V) | Synergy (%) |\\n|---|---|\\n| 0 | |\\n| 6 | |\\n| 9 | 80 |\\n| 12 | 75 |\\n| 18 | 55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The resulting EPC as a function of RF power starts to plateau at 20-30 W. Meanwhile, when observing just the effect of the Ar ions, which is the case for \\\"Ar milling only\\\", the Ar ions become energetic enough to significantly etch the surface above 15 W. This means that extra care should be taken when analysing the process above 15 W, as Ar etching might influence the observed EPC.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.5 Å.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.5 Å.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"80%.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_42_figure_10.jpg","caption":"Figure 10. Etch rates of $\\mathrm{Al}_2\\mathrm{O}_3$ at different temperatures using (a) $\\mathrm{Sn(acac)}_2,$ b) DMAC and c) TMA as the metal precursor.","id":"train/atomic-layer-etching/experimental-usecase/42/figure_10","sample_id":"atomic-layer-etching/experimental-usecase/42/figure_10","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/Selectivity in Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":672,"height":497,"image_format":"jpeg","image_sha256":"049df95b8761b42c5d6772a56c5d83b5e025ee93b049c770b7fc32044668ec3a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":668,"height":495}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Etch rate versus temperature is plotted for Al2O3 using TMA, DMAC, Sn(acac)2\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Sn(acac)₂ Etch Rate (Å/cycle) | DMAC Etch Rate (Å/cycle) | TMA Etch Rate (Å/cycle) |\\n|------------------|--------------------------------|---------------------------|--------------------------|\\n| 150 | 0.15 | — | — |\\n| 175 | 0.20 | — | — |\\n| 200 | 0.28 | — | — |\\n| 225 | 0.40 | 0.10 | — |\\n| 250 | 0.50 | 0.35 | 0.15 |\\n| 275 | — | 0.50 | 0.30 |\\n| 300 | — | 0.65 | 0.45 |\\n| 325 | — | — | 0.65 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Al2O3 etching has different threshold temperatures for each metal precursor, hence the etch rate changes for TMA and DMAC. The Al2O3 etch rates all increase at higher temperatures after exceeding the threshold temperature.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Sn(acac)2 etched Al2O3 at temperatures ≥150 °C\\n2. In comparison, DMAC etched Al2O3 at higher temperatures ≥225 °C\\n3. TMA etched Al2O3 at even higher temperatures ≥250 °C\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The different temperature thresholds may be attributed to varying activation barriers for the ligand-exchange reactions. The\\ndifferent temperature thresholds for the etching may provide another method for obtaining selective thermal ALE.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_42_figure_9.jpg","caption":"Figure 9. Etch rates of $\\mathrm{ZrO_2}$ $\\mathrm{HfO_2}$ and $\\mathrm{Al}_2\\mathrm{O}_3$ versus temperature using $\\mathrm{SiCl_4}$ as the metal precursor.","id":"train/atomic-layer-etching/experimental-usecase/42/figure_9","sample_id":"atomic-layer-etching/experimental-usecase/42/figure_9","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/Selectivity in Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":667,"height":503,"image_format":"jpeg","image_sha256":"8da4c1d4f1b1d5c74ac382dd05417d75bc130c1bffb5b37dc80f4575fe985212","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":663,"height":496}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart plots the etch rate of SiCl4 versus temperature for ZrO2, HfO2, and Al2O3.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | ZrO₂ Etch Rate (Å/cycle) | HfO₂ Etch Rate (Å/cycle) | Al₂O₃ Etch Rate (Å/cycle) |\\n|------------------|---------------------------|---------------------------|---------------------------|\\n| 250 | 0.00 | 0.00 | 0.00 |\\n| 300 | 0.055 | 0.015 | 0.005 |\\n| 350 | 0.15 | 0.06 | 0.01 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. At 250 °C, Etch rate is almost 0\\n2. At 300 °C, Etch rate is 0.055 Å/cycle\\n3. At 350 °C, Etch rate is 0.15 Å/cycle\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ligand-exchange reaction between SiCl4 and AlF3 is unfavorable at all the temperatures hence the etch rate is nil.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ligand-exchange reaction between SiCl4 and ZrF4 or HfF4 is feasible at >200 °C, hence increasing etch rates observed at >250 °C . The ZrO2 etch rate is higher than the HfO2 etch rate even though their predicted ΔG values are nearly equivalent. There must be additional kinetic factors that determine the actual etch rates\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_43_fig_6.jpg","caption":"Fig. 6. ToF-SIMS depth profiles of $\\mathrm{Al}_2\\mathrm{O}_3$ film after ALE process. The ALE cycle was repeated 5 times, and the samples were analyzed after the fluorination and removal steps. The $\\mathrm{AlF_2^-}$ concentration profiles were plotted for the different ALE process temperatures of (a) $200^{\\circ}\\mathrm{C}$ , (b) $250^{\\circ}\\mathrm{C}$ , and (c) $300^{\\circ}\\mathrm{C}$ . The $\\mathrm{AlOF_2^-}$ concentration profiles were also plotted for (d) $200^{\\circ}\\mathrm{C}$ , (e) $250^{\\circ}\\mathrm{C}$ , and (f) $300^{\\circ}\\mathrm{C}$ respectively.","id":"train/atomic-layer-etching/experimental-usecase/43/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/43/fig_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"},{"panel_id":"e","label":"multiple line chart"},{"panel_id":"f","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/Surface reaction during thermal atomic layer etching of aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1230,"height":955,"image_format":"jpeg","image_sha256":"374d7ca7bbd1ec7f3331f23410f29b55c0aa9b7ed35d30dc6b3cc7fed85874e9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":6,"width":491,"height":436},{"panel_id":"b","x":491,"y":2,"width":365,"height":438},{"panel_id":"c","x":854,"y":4,"width":366,"height":440},{"panel_id":"d","x":5,"y":512,"width":483,"height":442},{"panel_id":"e","x":487,"y":505,"width":365,"height":445},{"panel_id":"f","x":848,"y":510,"width":381,"height":442}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) depth profiles of Al₂O₃ films after five Atomic Layer Etching (ALE) cycles, measured after the fluorination and removal steps at different process temperatures.AlF₂⁻ depth profile at 200 °C, showing fluorine incorporation near the surface after fluorination and its partial removal during the etching step.\"},{\"panel_id\":\"b\",\"text\":\"AlF₂⁻ depth profile at 250 °C, indicating enhanced fluorine penetration and modified removal behavior compared to 200 °C.\"},{\"panel_id\":\"c\",\"text\":\"AlF₂⁻ depth profile at 300 °C, exhibiting deeper fluorine incorporation and more pronounced temperature-dependent effects.\"},{\"panel_id\":\"d\",\"text\":\"AlOF₂⁻ depth profile at 200 °C, reflecting the formation of mixed oxyfluoride species confined near the surface.\"},{\"panel_id\":\"e\",\"text\":\"AlOF₂⁻ depth profile at 250 °C, showing increased formation and redistribution of oxyfluoride species.\"},{\"panel_id\":\"f\",\"text\":\"AlOF₂⁻ depth profile at 300 °C, indicating stronger oxyfluoride formation and deeper distribution at higher temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sputter Time (s) | Intensity (c/s) | Method |\\n|---|---|---|\\n| 0 | 1E+02 | Fluorination |\\n| 0 | 1E+02 | Removal |\\n| 1 | 1.5E+02 | Fluorination |\\n| 1 | 1.5E+02 | Removal |\\n| 2 | 1E+02 | Fluorination |\\n| 2 | 1E+02 | Removal |\\n| 3 | 1.5E+01 | Fluorination |\\n| 3 | 1.5E+01 | Removal |\\n| 4 | 1E+01 | Fluorination |\\n| 4 | 1E+01 | Removal |\\n| 5 | 1.5E+00 | Fluorination |\\n| 5 | 1.5E+00 | Removal |\\n| 6 | 1E+00 | Fluorination |\\n| 6 | 1E+00 | Removal |\"},{\"panel_id\":\"b\",\"text\":\"| Sputter Time (s) | Intensity (c/s) | Method |\\n|---|---|---|\\n| 0 | 1E+02 | Fluorination |\\n| 0 | 1E+02 | Removal |\\n| 1 | 1.5E+02 | Fluorination |\\n| 1 | 1.4E+02 | Removal |\\n| 2 | 1E+02 | Fluorination |\\n| 2 | 9E+01 | Removal |\\n| 3 | 5E+01 | Fluorination |\\n| 3 | 4E+01 | Removal |\\n| 4 | 1E+01 | Fluorination |\\n| 4 | 8E+00 | Removal |\\n| 5 | 1.5E+00 | Fluorination |\\n| 5 | 1.4E+00 | Removal |\\n| 6 | 1.2E+00 | Fluorination |\\n| 6 | 1.1E+00 | Removal |\"},{\"panel_id\":\"c\",\"text\":\"| Sputter Time (s) | Intensity (c/s) | Method |\\n|---|---|---|\\n| 0 | 1E+02 | Fluorination |\\n| 0 | 8E+01 | Removal |\\n| 1 | 1.5E+02 | Fluorination |\\n| 1 | 1.3E+02 | Removal |\\n| 2 | 1E+02 | Fluorination |\\n| 2 | 8E+01 | Removal |\\n| 3 | 5E+01 | Fluorination |\\n| 3 | 3E+01 | Removal |\\n| 4 | 1E+01 | Fluorination |\\n| 4 | 8E+00 | Removal |\\n| 5 | 1.5E+00 | Fluorination |\\n| 5 | 1.3E+00 | Removal |\\n| 6 | 1.2E+00 | Fluorination |\\n| 6 | 1E+00 | Removal |\"},{\"panel_id\":\"d\",\"text\":\"| Sputter Time (s) | Intensity (c/s) | Method |\\n|---|---|---|\\n| 0 | 1E+02 | Fluorination |\\n| 0 | 1E+02 | Removal |\\n| 1 | 1.5E+02 | Fluorination |\\n| 1 | 1.5E+02 | Removal |\\n| 2 | 1E+02 | Fluorination |\\n| 2 | 1E+02 | Removal |\\n| 3 | 1.5E+01 | Fluorination |\\n| 3 | 1.5E+01 | Removal |\\n| 4 | 1E+01 | Fluorination |\\n| 4 | 1E+01 | Removal |\\n| 5 | 1.5E+00 | Fluorination |\\n| 5 | 1.5E+00 | Removal |\\n| 6 | 1E+00 | Fluorination |\\n| 6 | 1E+00 | Removal |\"},{\"panel_id\":\"e\",\"text\":\"| Sputter Time (s) | Intensity (c/s) | Method |\\n|---|---|---|\\n| 0 | 1E+02 | Fluorination |\\n| 0 | 1E+02 | Removal |\\n| 1 | 1.5E+02 | Fluorination |\\n| 1 | 1.4E+02 | Removal |\\n| 2 | 1E+02 | Fluorination |\\n| 2 | 9E+01 | Removal |\\n| 3 | 5E+01 | Fluorination |\\n| 3 | 4E+01 | Removal |\\n| 4 | 1E+01 | Fluorination |\\n| 4 | 8E+00 | Removal |\\n| 5 | 1.5E+00 | Fluorination |\\n| 5 | 1.4E+00 | Removal |\\n| 6 | 1.2E+00 | Fluorination |\\n| 6 | 1.1E+00 | Removal |\"},{\"panel_id\":\"f\",\"text\":\"| Sputter Time (s) | Intensity (c/s) | Method |\\n|---|---|---|\\n| 0 | 1E+02 | Fluorination |\\n| 0 | 8E+01 | Removal |\\n| 1 | 1.5E+02 | Fluorination |\\n| 1 | 1.3E+02 | Removal |\\n| 2 | 1E+02 | Fluorination |\\n| 2 | 8E+01 | Removal |\\n| 3 | 5E+01 | Fluorination |\\n| 3 | 3E+01 | Removal |\\n| 4 | 1E+01 | Fluorination |\\n| 4 | 8E+00 | Removal |\\n| 5 | 1.5E+00 | Fluorination |\\n| 5 | 1.3E+00 | Removal |\\n| 6 | 1.2E+00 | Fluorination |\\n| 6 | 1E+00 | Removal |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 200°C, the overlapping curves indicate that the TMA cannot overcome the activation barrier to effectively react with or volatilize the AlF_x layer, leaving the surface structure largely unchanged. At 300°C, the significant drop in signal confirms that the thermal energy enables the ligand-exchange mechanism to function, restoring the surface closer to the underlying bulk oxide composition by stripping away the fluorinated layer.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The drop is caused by the Ligand-Exchange Reaction with Trimethylaluminum (TMA).\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process is not viable at 200°C. The trade-off for the low thermal budget is a complete failure of the etch mechanism; the temperature must be raised to at least 250°C to activate the ligand exchange.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"NO, While the fluorination is shallow at 200°C, the AlOF₂⁻ profile (d) shows the removal step is incomplete, leaving a modified interface. For a 2 nm film, this residual modified layer constitutes a significant fraction of the total thickness, drastically altering the interface properties. A higher temperature (like 250°C) with complete removal, despite slightly deeper penetration, would better preserve the electrical properties of the underlying interface.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_45_figure_2.jpg","caption":"Figure 2. Mass changes during 10 consecutive HF exposures on $\\mathrm{TiO}_2$ ALD film at 200, 250, and $300^{\\circ}\\mathrm{C}$","id":"train/atomic-layer-etching/experimental-usecase/45/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/45/figure_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/Thermal Atomic Layer Etching of Titanium Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":667,"height":523,"image_format":"jpeg","image_sha256":"3722465db5d82bf7c8f79e7e0640c7b16e0303179a870adf8e7b55730136ab39","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":667,"height":521}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the mass change over time for 10 HF exposures on ALD TiO₂ at different temperatures (200°C, 250°C, and 300°C). The mass decreases over time, indicating a loss of material\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | 200°C (Mass Change, ng/cm^2) | 250°C (Mass Change, ng/cm^2) | 300°C (Mass Change, ng/cm^2) |\\n|---|---|---|---|\\n| 0 | 0 | 0 | 0 |\\n| 50 | -20 | -25 | -28 |\\n| 100 | -35 | -45 | -55 |\\n| 150 | -50 | -75 | -85 |\\n| 200 | -60 | -95 | -120 |\\n| 250 | -75 | -105 | -125 |\\n| 300 | -85 | -125 | -155 |\\n| 350 | -95 | -150 | -185 |\\n| 400 | -105 | -175 | -190 |\\n| 450 | -115 | -200 | -240 |\\n| 500 | -125 | -220 | -250 |\\n| 550 | -135 | -245 | -280 |\\n| 600 | -160 | -255 | -310 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Each step represents one discrete HF exposure pulse, with the flat regions corresponding to N₂ purge periods between exposures.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Higher temperatures increase the mass loss per HF exposure: −17 ng/cm² at 200°C, −25 ng/cm² at 250°C, and −32 ng/cm² at 300°C. This corresponds to TiO₂ removal of 0.45–0.85 Å per exposure, based on TiO₂ density of 3.76 g/cm³.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This result validates the core mechanism: if HF can spontaneously etch TiO₂ to form volatile TiF₄ and H₂O, then oxidizing TiN to TiO₂ first enables its removal. Without this spontaneous etching, the oxidation-fluorination ALE approach would not work.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reaction has ΔG° = −6.1 kcal/mol at 25°C (favorable) but becomes +6.3 kcal/mol at 250°C (unfavorable under standard conditions). However, etching still occurs because excess HF and rapid removal of volatile products (TiF₄, H₂O) by N₂ purge drive the reaction forward.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_534d04cd0f885c3fdd5f4aaca3bde4aea20cf962e714ca66eae14e7e8af77611.jpg","caption":"","id":"train/atomic-layer-etching/experimental-usecase/46/534d04cd0f885c3fdd5f4aaca3bde4aea20cf962e714ca66eae14e7e8af77611","sample_id":"atomic-layer-etching/experimental-usecase/46/534d04cd0f885c3fdd5f4aaca3bde4aea20cf962e714ca66eae14e7e8af77611","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/534d04cd0f885c3fdd5f4aaca3bde4aea20cf962e714ca66eae14e7e8af77611.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/534d04cd0f885c3fdd5f4aaca3bde4aea20cf962e714ca66eae14e7e8af77611.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"not_found"},"width":950,"height":375,"image_format":"jpeg","image_sha256":"61d4c4054b1aad81ed67b40ce28db4469fe2bb82d1ab1cd749ae613b468327ad","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":6,"width":468,"height":370},{"panel_id":"b","x":481,"y":6,"width":469,"height":369}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents quartz crystal microbalance (QCM) data showing mass changes during chemical exposures at 170 °C. In panel (a), only BCl₃ or WF₆ dosing leads to mass gain or negligible change, and WF₆/Sn(acac)₂ cycling results in net deposition, whereas alternating WF₆ and BCl₃ produces a continuous linear mass loss, confirming atomic layer etching (ALE) of TiO₂.\"},{\"panel_id\":\"b\",\"text\":\"The image zooms into the ALE process, revealing a sawtooth profile in which the WF₆ pulse increases mass due to surface fluorination, followed by a sharp mass decrease during the BCl₃ pulse from ligand exchange and volatilization, yielding net material removal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass loading (ng/cm²) | Sample |\\n|---------:|----------------------:|--------|\\n| 16000 | 4228.46 | WF₆/BCl₃ |\\n| 16000 | 4664.16 | WF₆/Sn(acac)₂ |\\n| 16000 | 5358.22 | WF₆ doses |\\n| 16000 | 6120.32 | BCl₃ doses |\\n| 17000 | 4483.84 | WF₆/BCl₃ |\\n| 17000 | 4919.33 | WF₆/Sn(acac)₂ |\\n| 17000 | 5722.26 | WF₆ doses |\\n| 17000 | 6341.46 | BCl₃ doses |\\n| 18000 | 4773.03 | WF₆/BCl₃ |\\n| 18000 | 5211.92 | WF₆/Sn(acac)₂ |\\n| 18000 | 6011.45 | WF₆ doses |\\n| 18000 | 6776.95 | BCl₃ doses |\\n| 19000 | 4555.29 | WF₆/BCl₃ |\\n| 19000 | 5647.41 | WF₆/Sn(acac)₂ |\\n| 19000 | 6341.46 | WF₆ doses |\\n| 19000 | 6668.08 | BCl₃ doses |\\n| 20000 | 4300.12 | WF₆/BCl₃ |\\n| 20000 | 5613.38 | WF₆/Sn(acac)₂ |\\n| 20000 | 6375.48 | WF₆ doses |\\n| 20000 | | BCl₃ doses |\\n| 21000 | 3827.21 | WF₆/BCl₃ |\\n| 21000 | 5501.11 | WF₆/Sn(acac)₂ |\\n| 21000 | 6304.04 | WF₆ doses |\\n| 21000 | | BCl₃ doses |\\n| 22000 | 3279.45 | WF₆/BCl₃ |\\n| 22000 | 5245.94 | WF₆/Sn(acac)₂ |\\n| 22000 | 6266.16 | WF₆ doses |\\n| 22000 | | BCl₃ doses |\\n| 23000 | 2877.99 | WF₆/BCl₃ |\\n| 23000 | 5137.07 | WF₆/Sn(acac)₂ |\\n| 23000 | | WF₆ doses |\\n| 23000 | | BCl₃ doses |\\n| 24000 | 2333.63 | WF₆/BCl₃ |\\n| 24000 | 4956.75 | WF₆/Sn(acac)₂ |\\n| 24000 | | WF₆ doses |\\n| 24000 | | BCl₃ doses |\"},{\"panel_id\":\"b\",\"text\":\"| ALE cycle number | Mass loading (ng/cm²) | Pulse |\\n|-----------------:|----------------------:|-------|\\n| 20 | 4559.39 | WF₆ |\\n| 20 | 4629.66 | WF₆ |\\n| 20.5 | 4526.56 | BCl₃ |\\n| 20.5 | 4615.65 | BCl₃ |\\n| 21 | 4507.95 | WF₆ |\\n| 21 | 4542.97 | WF₆ |\\n| 21.5 | 4468.11 | BCl₃ |\\n| 21.5 | 4521.96 | BCl₃ |\\n| 22 | 4453.88 | WF₆ |\\n| 22 | 4491.53 | WF₆ |\\n| 22.5 | 4414.04 | BCl₃ |\\n| 22.5 | 4468.11 | BCl₃ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It would fail. The black line shows a positive slope (mass increase) over time, indicating that combining WF₆ and Sn(acac)₂ results in chemical vapor deposition (CVD) or film growth rather than etching. Substituting BCl₃ with Sn(acac)₂ would therefore add material instead of removing it.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 170 °C, WF₆ can fluorinate the TiO₂ surface, creating non-volatile metal fluorides or oxyfluorides and adding mass. However, without a second reagent such as BCl₃ to drive a ligand-exchange reaction and convert these surface species into volatile products (e.g., TiClₓ or volatile oxychlorides), the modified surface layer remains solid, blocking further etching.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Modification step: WF₆ exposure (mass increase).\\nRemoval step: BCl₃ exposure (mass decrease).\\nIdentification: The BCl₃ exposure is the removal step, indicated by the sharp drop in mass below the starting baseline of that cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cycles: Approximately 167 cycles (100 Å / 0.6 Å·cycle⁻¹). It is preferred for its digital controllability. A continuous wet etch is time-dependent and prone to under- or over-etching due to diffusion and timing errors, whereas ALE removes a fixed amount per cycle independent of time, enabling precise thickness control by simply counting cycles.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_1.jpg","caption":"Figure 1. QCM analysis at $220^{\\circ}\\mathrm{C}$ of (a) 200 cycles of $\\mathrm{Al}_2\\mathrm{O}_3$ or $\\mathrm{TiO}_2$ followed immediately by $50\\mathrm{WF}_6 / \\mathrm{Ar}$ exposures of $1 / 60\\mathrm{s}$ each and (b) initial loading of $1\\mathrm{WF}_6$ exposure of $50\\mathrm{s}$ versus $50\\mathrm{WF}_6 / \\mathrm{Ar}$ exposures of $1 / 60\\mathrm{s}$ on $\\mathrm{TiO}_2$ (200 cycles).","id":"train/atomic-layer-etching/experimental-usecase/46/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_1","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1050,"height":422,"image_format":"jpeg","image_sha256":"10dae58b0704ae6d7f16fdf1e4f49ff207483d2b585d8b96b6528f342a31cd17","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":525,"height":416},{"panel_id":"b","x":506,"y":2,"width":542,"height":414}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents QCM data demonstrating material selectivity during WF₆ exposure at 220 °C. The TiO₂ film (red line) shows continuous mass loss, indicating etching, whereas the Al₂O₃ film (black line) exhibits an initial mass gain followed by saturation, indicating no etching.\"},{\"panel_id\":\"b\",\"text\":\"QCM data comparing WF₆ dosing strategies on TiO₂. Pulsed WF₆ dosing (red line) results in cumulative mass loss (etching), while the initial exposure (black line) is dominated by strong adsorption and fluorination, seen as a large mass gain before etching kinetics dominate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass loading (ng/cm²) | Sample | Condition |\\n|---------:|----------------------:|--------|-----------|\\n| 8000 | 3713.81 | Al₂O₃ | Metal Oxide ALD |\\n| 8000 | 2935.80 | TiO₂ | Metal Oxide ALD |\\n| 8500 | 3920.90 | Al₂O₃ | Metal Oxide ALD |\\n| 8500 | 3025.36 | TiO₂ | Metal Oxide ALD |\\n| 9000 | 4130.79 | Al₂O₃ | Metal Oxide ALD |\\n| 9000 | 3084.13 | TiO₂ | Metal Oxide ALD |\\n| 9500 | 4729.68 | Al₂O₃ | WF₆ Doses |\\n| 9500 | 3294.02 | TiO₂ | WF₆ Doses |\\n| 10000 | 4788.45 | Al₂O₃ | WF₆ Doses |\\n| 10000 | 3145.70 | TiO₂ | WF₆ Doses |\\n| 10500 | 4819.24 | Al₂O₃ | WF₆ Doses |\\n| 10500 | 3025.36 | TiO₂ | WF₆ Doses |\\n| 11000 | 4788.45 | Al₂O₃ | WF₆ Doses |\\n| 11000 | 2756.70 | TiO₂ | WF₆ Doses |\\n| 11500 | 4757.67 | Al₂O₃ | WF₆ Doses |\\n| 11500 | 2216.57 | TiO₂ | WF₆ Doses |\\n| 12000 | 4757.67 | Al₂O₃ | WF₆ Doses |\\n| 12000 | 1351.82 | TiO₂ | WF₆ Doses |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Mass loading (ng/cm²) | Condition |\\n|---------:|----------------------:|-----------|\\n| 18200 | 1546.58 | TiO₂ ALD |\\n| 18200 | 816.87 | 220 °C, 1.75 Torr |\\n| 18300 | 1566.23 | TiO₂ ALD |\\n| 18300 | 857.10 | 220 °C, 1.75 Torr |\\n| 18400 | 1566.23 | TiO₂ ALD |\\n| 18400 | 887.04 | 220 °C, 1.75 Torr |\\n| 18500 | 1806.66 | 50 WF₆ doses (1 s) |\\n| 18500 | 1106.89 | 1 WF₆ dose (50 s) |\\n| 18600 | 1796.37 | 50 WF₆ doses (1 s) |\\n| 18600 | 1117.18 | 1 WF₆ dose (50 s) |\\n| 18700 | 1776.72 | 50 WF₆ doses (1 s) |\\n| 18700 | 1136.82 | 1 WF₆ dose (50 s) |\\n| 18800 | 1726.21 | 50 WF₆ doses (1 s) |\\n| 18800 | 1136.82 | 1 WF₆ dose (50 s) |\\n| 18900 | 1706.56 | 50 WF₆ doses (1 s) |\\n| 18900 | 1147.11 | 1 WF₆ dose (50 s) |\\n| 19000 | 1676.72 | 50 WF₆ doses (1 s) |\\n| 19000 | 1156.47 | 1 WF₆ dose (50 s) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Selective pattern transfer. The TiO₂ film will be etched away, as indicated by the continuous mass loss (negative slope) in the red curve. The Al₂O₃ mask will remain intact and essentially unetched, as indicated by the black curve, which shows only stable mass gain due to surface fluorination. This confirms that WF₆ provides excellent selectivity for removing TiO₂ relative to Al₂O₃.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Etchability vs. inertness. TiO₂ (red line) is superior as a sacrificial spacer because it spontaneously etches in WF₆ at 220 °C, whereas Al₂O₃ (black line) is inert and resistant, meaning it would not be removed, failing the sacrificial requirement.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Surface fluorination/adsorption. The WF₆ molecules react with surface oxygen to form a heavy layer of non-volatile metal fluorides (TiFₓ) or tungsten oxyfluorides (WOₓFᵧ). This accumulation of heavy F and W atoms adds mass to the crystal before the slow volatilization step can remove any material.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Continuous vapor etching (CVE). True ALE requires a self-limiting mechanism where the etch stops after removing one layer. The red curve shows a steep, continuous linear drop in mass as long as WF₆ is pulsed, indicating that at 220 °C, the thermal energy is sufficient to drive the reaction continuously without stopping. This is a CVE process, not a self-limiting ALE process.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_10.jpg","caption":"Figure 10. (a) QCM analysis at $170^{\\circ}\\mathrm{C}$ and 1.75 Torr of $\\mathrm{TiO_2}$ ALD followed by $25\\mathrm{BCl}_3 / \\mathrm{Ar}$ doses (pink), $50\\mathrm{WF}_6 / \\mathrm{Ar}$ doses (red), $50\\mathrm{WF}_6 / \\mathrm{Ar} / \\mathrm{Sn}(\\mathrm{acac})_2 / \\mathrm{Ar}$ cycles (black), or $50\\mathrm{WF}_6 / \\mathrm{Ar} / \\mathrm{BCl}_3 / \\mathrm{Ar}$ cycles (blue). (b) Enlarged view of the $\\mathrm{WF}_6 / \\mathrm{Ar} / \\mathrm{BCl}_3 / \\mathrm{Ar}$ etch sequence. (c) QCM of $\\mathrm{WF}_6 / \\mathrm{Ar} / \\mathrm{BCl}_3 / \\mathrm{Ar}$ sequence at 110, 130, 150, 170, and $190^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/46/figure_10","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_10","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1044,"height":878,"image_format":"jpeg","image_sha256":"e80895aae58796e05f33c82fdf19aac9a1d900379e57147db803f5e64f57dafb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":513,"height":410},{"panel_id":"b","x":534,"y":0,"width":509,"height":414},{"panel_id":"c","x":217,"y":449,"width":576,"height":428}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents quartz crystal microbalance (QCM) data showing mass changes during chemical exposures at 170 °C. In panel (a), only BCl₃ or WF₆ dosing leads to mass gain or negligible change, and WF₆/Sn(acac)₂ cycling results in net deposition, whereas alternating WF₆ and BCl₃ produces a continuous linear mass loss, confirming atomic layer etching (ALE) of TiO₂.\"},{\"panel_id\":\"b\",\"text\":\"The image zooms into the ALE process, revealing a sawtooth profile in which the WF₆ pulse increases mass due to surface fluorination, followed by a sharp mass decrease during the BCl₃ pulse from ligand exchange and volatilization, yielding net material removal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass loading (ng/cm²) | Sample |\\n|---------:|----------------------:|--------|\\n| 16000 | 4228.46 | WF₆/BCl₃ |\\n| 16000 | 4664.16 | WF₆/Sn(acac)₂ |\\n| 16000 | 5358.22 | WF₆ doses |\\n| 16000 | 6120.32 | BCl₃ doses |\\n| 17000 | 4483.84 | WF₆/BCl₃ |\\n| 17000 | 4919.33 | WF₆/Sn(acac)₂ |\\n| 17000 | 5722.26 | WF₆ doses |\\n| 17000 | 6341.46 | BCl₃ doses |\\n| 18000 | 4773.03 | WF₆/BCl₃ |\\n| 18000 | 5211.92 | WF₆/Sn(acac)₂ |\\n| 18000 | 6011.45 | WF₆ doses |\\n| 18000 | 6776.95 | BCl₃ doses |\\n| 19000 | 4555.29 | WF₆/BCl₃ |\\n| 19000 | 5647.41 | WF₆/Sn(acac)₂ |\\n| 19000 | 6341.46 | WF₆ doses |\\n| 19000 | 6668.08 | BCl₃ doses |\\n| 20000 | 4300.12 | WF₆/BCl₃ |\\n| 20000 | 5613.38 | WF₆/Sn(acac)₂ |\\n| 20000 | 6375.48 | WF₆ doses |\\n| 20000 | | BCl₃ doses |\\n| 21000 | 3827.21 | WF₆/BCl₃ |\\n| 21000 | 5501.11 | WF₆/Sn(acac)₂ |\\n| 21000 | 6304.04 | WF₆ doses |\\n| 21000 | | BCl₃ doses |\\n| 22000 | 3279.45 | WF₆/BCl₃ |\\n| 22000 | 5245.94 | WF₆/Sn(acac)₂ |\\n| 22000 | 6266.16 | WF₆ doses |\\n| 22000 | | BCl₃ doses |\\n| 23000 | 2877.99 | WF₆/BCl₃ |\\n| 23000 | 5137.07 | WF₆/Sn(acac)₂ |\\n| 23000 | | WF₆ doses |\\n| 23000 | | BCl₃ doses |\\n| 24000 | 2333.63 | WF₆/BCl₃ |\\n| 24000 | 4956.75 | WF₆/Sn(acac)₂ |\\n| 24000 | | WF₆ doses |\\n| 24000 | | BCl₃ doses |\"},{\"panel_id\":\"b\",\"text\":\"| ALE cycle number | Mass loading (ng/cm²) | Pulse |\\n|-----------------:|----------------------:|-------|\\n| 20 | 4559.39 | WF₆ |\\n| 20 | 4629.66 | WF₆ |\\n| 20.5 | 4526.56 | BCl₃ |\\n| 20.5 | 4615.65 | BCl₃ |\\n| 21 | 4507.95 | WF₆ |\\n| 21 | 4542.97 | WF₆ |\\n| 21.5 | 4468.11 | BCl₃ |\\n| 21.5 | 4521.96 | BCl₃ |\\n| 22 | 4453.88 | WF₆ |\\n| 22 | 4491.53 | WF₆ |\\n| 22.5 | 4414.04 | BCl₃ |\\n| 22.5 | 4468.11 | BCl₃ |\"},{\"panel_id\":\"c\",\"text\":\"| Time (s) | Mass loading (ng/cm²) | Condition | Temperature |\\n|---------:|----------------------:|-------------------------------|-------------|\\n| 3000 | 696.55 | TiO₂ ALD (TiCl₄/H₂O) | 110 °C |\\n| 3000 | 759.00 | TiO₂ ALD (TiCl₄/H₂O) | 130 °C |\\n| 3000 | 905.00 | TiO₂ ALD (TiCl₄/H₂O) | 150 °C |\\n| 3000 | 821.45 | TiO₂ ALD (TiCl₄/H₂O) | 170 °C |\\n| 3000 | 852.67 | TiO₂ ALD (TiCl₄/H₂O) | 190 °C |\\n| 4000 | 1051.71 | TiO₂ ALD (TiCl₄/H₂O) | 110 °C |\\n| 4000 | 1062.44 | TiO₂ ALD (TiCl₄/H₂O) | 130 °C |\\n| 4000 | 1114.16 | TiO₂ ALD (TiCl₄/H₂O) | 150 °C |\\n| 4000 | 1093.67 | TiO₂ ALD (TiCl₄/H₂O) | 170 °C |\\n| 4000 | 1093.67 | TiO₂ ALD (TiCl₄/H₂O) | 190 °C |\\n| 5000 | 1260.51 | TiO₂ ALE (WF₆/BCl₃) | 110 °C |\\n| 5000 | 1240.02 | TiO₂ ALE (WF₆/BCl₃) | 130 °C |\\n| 5000 | 1166.85 | TiO₂ ALE (WF₆/BCl₃) | 150 °C |\\n| 5000 | 1093.67 | TiO₂ ALE (WF₆/BCl₃) | 170 °C |\\n| 5000 | 1020.49 | TiO₂ ALE (WF₆/BCl₃) | 190 °C |\\n| 6000 | 1135.62 | TiO₂ ALE (WF₆/BCl₃) | 110 °C |\\n| 6000 | 1082.93 | TiO₂ ALE (WF₆/BCl₃) | 130 °C |\\n| 6000 | 947.31 | TiO₂ ALE (WF₆/BCl₃) | 150 °C |\\n| 6000 | 727.78 | TiO₂ ALE (WF₆/BCl₃) | 170 °C |\\n| 6000 | 518.98 | TiO₂ ALE (WF₆/BCl₃) | 190 °C |\\n| 7000 | | TiO₂ ALE (WF₆/BCl₃) | 110 °C |\\n| 7000 | 925.85 | TiO₂ ALE (WF₆/BCl₃) | 130 °C |\\n| 7000 | 800.96 | TiO₂ ALE (WF₆/BCl₃) | 150 °C |\\n| 7000 | 414.58 | TiO₂ ALE (WF₆/BCl₃) | 170 °C |\\n| 7000 | -55.70 | TiO₂ ALE (WF₆/BCl₃) | 190 °C |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"WF₆ dose\\n\\nAr purge\\n\\nBCl₃ dose\\n\\nAr purge\\n\\nTemperature control is critical because it directly governs the reaction kinetics and ensures the process remains self-limiting.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The self-limiting ALE process at 170°C is required for perfect conformality in high-aspect-ratio structures. Its layer-by-layer nature ensures uniform etching down the trench sidewalls. The trade-off is a much slower etch rate (~0.6 Å/cycle) compared to the rapid, isotropic material removal of the continuous CVE process at 220°C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate (mass loss per cycle) increases significantly with temperature. This is due to the Arrhenius behavior of the surface reactions: higher thermal energy accelerates the fluorination of TiO₂ by WF₆ and the subsequent removal of the modified layer by BCl₃, leading to more complete reactions per cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This high selectivity means the ALE process can precisely and completely remove the TiO₂ spacer while using the Al₂O₃ layer as a reliable etch stop. This enables the fabrication of more scaled transistor architectures by allowing the selective etching of one oxide without damaging other critical oxide layers in the stack.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_11.jpg","caption":"Figure 11. Thermodynamic modeling results showing the expected equilibrium species concentrations from 25 to $400^{\\circ}C$ for (a) reactions 2 and 3, exposing $\\mathbb{N}_2$ -diluted $\\mathrm{BCl}_3$ at 1.5 Torr to $\\mathrm{TiF_4 / WO_3}$ .. $3\\mathrm{mol}$ of $\\mathrm{BCl}_3(\\mathrm{g}) + 1$ mol of $\\mathrm{TiF_4(s) + 1}$ mol of $\\mathrm{WO}_3(\\mathrm{s})$ ; and (b) the analogous reactions for the $\\mathrm{Al}_2\\mathrm{O}_3$ system: 3 mol of $\\mathrm{BCl}_3(\\mathrm{g}) + 1$ mol of $\\mathrm{AlF}_3(\\mathrm{s}) + 1$ mol of $\\mathrm{WO}_3(\\mathrm{s})$ . At equilibrium at $170^{\\circ}\\mathrm{C},$ $\\mathrm{BCl}_3 + \\mathrm{TiF}_4 / \\mathrm{WO}_3$ produces predominantly volatile $\\mathrm{BF}_3,$ $\\mathrm{TiCl}_4,$ and $\\mathrm{WOCl_4}$ and solid $\\mathrm{B}_2\\mathrm{O}_3$","id":"train/atomic-layer-etching/experimental-usecase/46/figure_11","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_11","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1011,"height":408,"image_format":"jpeg","image_sha256":"4e750a2adac5f0a2abb9c48a053711a9a25472604d5de62359c63c7307ba32ab","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":2,"width":498,"height":403},{"panel_id":"b","x":507,"y":5,"width":502,"height":400}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"TiO₂ System: At 170 °C, the reaction of BCl₃ with fluorinated TiO₂ surface species produces exclusively volatile products such as TiCl₄ (black line) and WOCl₄ (red line), along with solid B₂O₃. The absence of solid titanium species confirms that etching is thermodynamically favorable.\"},{\"panel_id\":\"b\",\"text\":\"Al₂O₃ System: At 170 °C, aluminum remains as solid AlF₃ (purple line), and significant formation of volatile AlCl₃ (black line) occurs only above 300 °C. This explains the selectivity: Ti-fluorides volatilize at low temperatures, whereas Al-fluorides do not.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Equilibrium Phase Concentration (mol) | Material |\\n|-----------------:|---------------------------------------:|----------|\\n| 0 | 1.30 | BF₃ |\\n| 0 | 1.00 | TiCl₄ |\\n| 0 | 0.65 | B₂O₃ |\\n| 0 | 0.30 | BCl₃ |\\n| 0 | 0.05 | WO₃ |\\n| 0 | 0.90 | WOCl₄ |\\n| 0 | 0.00 | WO₂Cl₂ |\\n| 100 | 1.30 | BF₃ |\\n| 100 | 1.00 | TiCl₄ |\\n| 100 | 0.65 | B₂O₃ |\\n| 100 | 0.30 | BCl₃ |\\n| 100 | 0.05 | WO₃ |\\n| 100 | 0.90 | WOCl₄ |\\n| 100 | 0.00 | WO₂Cl₂ |\\n| 200 | 1.30 | BF₃ |\\n| 200 | 1.00 | TiCl₄ |\\n| 200 | 0.65 | B₂O₃ |\\n| 200 | 0.32 | BCl₃ |\\n| 200 | 0.05 | WO₃ |\\n| 200 | 0.85 | WOCl₄ |\\n| 200 | 0.05 | WO₂Cl₂ |\\n| 300 | 1.30 | BF₃ |\\n| 300 | 1.00 | TiCl₄ |\\n| 300 | 0.60 | B₂O₃ |\\n| 300 | 0.40 | BCl₃ |\\n| 300 | 0.05 | WO₃ |\\n| 300 | 0.60 | WOCl₄ |\\n| 300 | 0.30 | WO₂Cl₂ |\\n| 350 | 1.30 | BF₃ |\\n| 350 | 1.00 | TiCl₄ |\\n| 350 | 0.45 | B₂O₃ |\\n| 350 | 0.55 | BCl₃ |\\n| 350 | 0.05 | WO₃ |\\n| 350 | 0.35 | WOCl₄ |\\n| 350 | 0.60 | WO₂Cl₂ |\\n| 400 | 1.30 | BF₃ |\\n| 400 | 1.00 | TiCl₄ |\\n| 400 | 0.35 | B₂O₃ |\\n| 400 | 0.80 | BCl₃ |\\n| 400 | 0.05 | WO₃ |\\n| 400 | 0.15 | WOCl₄ |\\n| 400 | 0.90 | WO₂Cl₂ |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | Equilibrium Phase Concentration (mol) | Material |\\n|-----------------:|---------------------------------------:|----------|\\n| 0 | 1.65 | BCl₃ |\\n| 0 | 1.00 | AlF₃ |\\n| 0 | 0.65 | B₂O₃ |\\n| 0 | 0.05 | AlCl₃ |\\n| 0 | 0.85 | WOCl₄ |\\n| 0 | 0.00 | WO₂Cl₂ |\\n| 0 | 0.00 | BF₃ |\\n| 100 | 1.65 | BCl₃ |\\n| 100 | 1.00 | AlF₃ |\\n| 100 | 0.65 | B₂O₃ |\\n| 100 | 0.05 | AlCl₃ |\\n| 100 | 0.85 | WOCl₄ |\\n| 100 | 0.00 | WO₂Cl₂ |\\n| 100 | 0.00 | BF₃ |\\n| 200 | 1.65 | BCl₃ |\\n| 200 | 1.00 | AlF₃ |\\n| 200 | 0.65 | B₂O₃ |\\n| 200 | 0.05 | AlCl₃ |\\n| 200 | 0.85 | WOCl₄ |\\n| 200 | 0.05 | WO₂Cl₂ |\\n| 200 | 0.05 | BF₃ |\\n| 300 | 1.68 | BCl₃ |\\n| 300 | 1.00 | AlF₃ |\\n| 300 | 0.60 | B₂O₃ |\\n| 300 | 0.05 | AlCl₃ |\\n| 300 | 0.60 | WOCl₄ |\\n| 300 | 0.30 | WO₂Cl₂ |\\n| 300 | 0.20 | BF₃ |\\n| 350 | 1.70 | BCl₃ |\\n| 350 | 1.00 | AlF₃ |\\n| 350 | 0.45 | B₂O₃ |\\n| 350 | 0.05 | AlCl₃ |\\n| 350 | 0.35 | WOCl₄ |\\n| 350 | 0.60 | WO₂Cl₂ |\\n| 350 | 0.60 | BF₃ |\\n| 400 | 1.50 | BCl₃ |\\n| 400 | 1.00 | AlF₃ |\\n| 400 | 0.30 | B₂O₃ |\\n| 400 | 0.05 | AlCl₃ |\\n| 400 | 0.20 | WOCl₄ |\\n| 400 | 0.75 | WO₂Cl₂ |\\n| 400 | 0.90 | BF₃ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiCl₄ (Titanium Tetrachloride).Temperature: It is stable and maximized across the entire temperature range shown (from 25 °C upwards), indicating very favorable thermodynamics.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Thermodynamic selectivity. At 200 °C, the TiCl₄ concentration in panel (a) is high (≈1.0 mol), indicating that titanium is efficiently driven into the gas phase. In contrast, in panel (b), the AlCl₃ concentration is effectively zero, with aluminum remaining trapped as solid AlF₃, providing a robust thermodynamic etch stop.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"From the tungsten oxide (WO₃). The WO₃ acts as an oxygen source, which is scavenged by boron from BCl₃ to form stable solid B₂O₃, while tungsten forms volatile oxychlorides (WOCl₄).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies BCl₃ acts as the coreactant that removes the modified surface layer. After WF₆ fluorinates TiO₂ to form a TiF₄-like surface, BCl₃ exchanges fluorine for chlorine, producing volatile TiCl₄ and regenerating the surface for the next WF₆ dose. The thermodynamic drive for this exchange exists for TiO₂ but not for Al₂O₃, enabling selective ALE.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_12.jpg","caption":"Figure 12. (a) QCM analysis of $\\mathrm{Al}_2\\mathrm{O}_3$ and $\\mathrm{TiO}_2$ ALD followed by $50\\mathrm{WF}_6 / \\mathrm{BCl}_3$ ALE cycles at $170^{\\circ}\\mathrm{C}$ . The ALE sequence follows $\\mathrm{WF}_6 / \\mathrm{Ar} / \\mathrm{BCl}_3 / \\mathrm{Ar}$ $(0.2 / 45 / 2.5 / 60\\mathrm{s})$ . (b) Enlarged view of (a).","id":"train/atomic-layer-etching/experimental-usecase/46/figure_12","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_12","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1053,"height":422,"image_format":"jpeg","image_sha256":"2b60cb3d505de57d297c9a99cad071bcb6c4dc1f3c35120e88066d9e6421b77c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":527,"height":417},{"panel_id":"b","x":512,"y":4,"width":538,"height":411}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure uses Quartz Crystal Microbalance (QCM) data to demonstrate the selective etching of Titanium Dioxide (TiO₂) over Aluminum Oxide (Al₂O₃) at 170 °C. The image shows the full process timeline. Both materials are first deposited via ALD (staircase growth). Upon switching to the ALE recipe (WF₆/BCl₃), TiO₂ (red line) immediately begins to lose mass linearly (etching), while Al₂O₃ (black line) gains a small amount of mass and then remains stable (resistant).\"},{\"panel_id\":\"b\",\"text\":\"A magnified view of the first few ALE cycles. TiO₂ loses mass in every cycle (sawtooth down), whereas Al₂O₃ gains mass during the WF₆ pulse and barely loses it during the BCl₃ pulse, confirming the formation of a stable, non-volatile fluoride layer on aluminum.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass loading (ng cm⁻²) | Material | Process condition |\\n|---------:|-----------------------:|----------|-------------------|\\n| 8000 | 1500 | Al₂O₃ | Metal oxide ALD |\\n| 8000 | 950 | TiO₂ | Metal oxide ALD |\\n| 8500 | 1700 | Al₂O₃ | Metal oxide ALD |\\n| 8500 | 1050 | TiO₂ | Metal oxide ALD |\\n| 9000 | 2100 | Al₂O₃ | Metal oxide ALD |\\n| 9000 | 1200 | TiO₂ | Metal oxide ALD |\\n| 9500 | 2500 | Al₂O₃ | WF₆/BCl₃ ALE |\\n| 9500 | 1100 | TiO₂ | WF₆/BCl₃ ALE |\\n| 10000 | 2500 | Al₂O₃ | WF₆/BCl₃ ALE |\\n| 10000 | 900 | TiO₂ | WF₆/BCl₃ ALE |\\n| 10500 | 2500 | Al₂O₃ | WF₆/BCl₃ ALE |\\n| 10500 | 750 | TiO₂ | WF₆/BCl₃ ALE |\\n| 11000 | 2500 | Al₂O₃ | WF₆/BCl₃ ALE |\\n| 11000 | 650 | TiO₂ | WF₆/BCl₃ ALE |\\n| 11500 | 2500 | Al₂O₃ | WF₆/BCl₃ ALE |\\n| 11500 | 500 | TiO₂ | WF₆/BCl₃ ALE |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Mass loading (ng cm⁻²) | Material | Cyclic condition |\\n|---------:|-----------------------:|----------|------------------|\\n| 9000 | 1500 | Al₂O₃ | ALD |\\n| 9000 | 1200 | TiO₂ | ALD |\\n| 9100 | 1550 | Al₂O₃ | ALD |\\n| 9100 | 1250 | TiO₂ | ALD |\\n| 9200 | 1850 | Al₂O₃ | WF₆ |\\n| 9200 | 1400 | TiO₂ | WF₆ |\\n| 9250 | 1800 | Al₂O₃ | BCl₃ |\\n| 9250 | 1250 | TiO₂ | BCl₃ |\\n| 9300 | 1850 | Al₂O₃ | WF₆ |\\n| 9300 | 1300 | TiO₂ | WF₆ |\\n| 9350 | 1800 | Al₂O₃ | BCl₃ |\\n| 9350 | 1200 | TiO₂ | BCl₃ |\\n| 9400 | 1850 | Al₂O₃ | WF₆ |\\n| 9400 | 1250 | TiO₂ | WF₆ |\\n| 9450 | 1800 | Al₂O₃ | BCl₃ |\\n| 9450 | 1150 | TiO₂ | BCl₃ |\\n| 9500 | 1850 | Al₂O₃ | WF₆ |\\n| 9500 | 1200 | TiO₂ | WF₆ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mass jump / no etch. No, it does not lose mass. Instead, it shows a distinct upward jump (mass gain) of ~300 ng/cm² initially, followed by a stable plateau. This indicates surface fluorination (adsorption) rather than material removal.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thermal WF₆/BCl₃ ALE process is superior. Its purely chemical, self-limiting nature ensures perfect conformality in high-aspect-ratio structures without the directional ion damage inherent to plasma etching, which can degrade sidewall quality and introduce defects in sensitive nanostructures.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TiO₂ mass decreases because its fluorination/chlorination products (e.g., TiF₄ and TiCl₄) are volatile at 170°C, allowing material removal. Al₂O₃ mass remains stable because its potential reaction products (e.g., AlF₃, AlCl₃) are non-volatile at this temperature, causing the surface reactions to self-passivate rather than etch.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the process can precisely remove the TiO₂ spacer while using the Al₂O₃ layer as a perfect etch stop. This enables the creation of self-aligned, scaled transistor architectures by selectively etching one material without damaging the other, a critical capability for advanced manufacturing.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_2.jpg","caption":"Figure 2. Thermodynamic modeling results showing the expected equilibrium species concentrations from 25 to $400^{\\circ}\\mathrm{C}$ for $\\mathrm{N}_2$ -diluted $\\mathrm{WF}_6$ exposed to $\\mathrm{TiO}_2$ or $\\mathrm{Al}_2\\mathrm{O}_3$ at $P = 1.5$ Torr: (a) $1\\mathrm{mol}$ $\\mathrm{WF}_6 + 1\\mathrm{mol}$ $\\mathrm{TiO}_2$ and (b) $1\\mathrm{mol}$ $\\mathrm{WF}_6 + 0.667\\mathrm{mol}$ $\\mathrm{Al}_2\\mathrm{O}_3$ .","id":"train/atomic-layer-etching/experimental-usecase/46/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1053,"height":428,"image_format":"jpeg","image_sha256":"0be6dc1b88b9796a265dbd90fc2cb612b9ab88b6174c0af8f83688e69f57103c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":527,"height":423},{"panel_id":"b","x":529,"y":4,"width":522,"height":420}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Equilibrium analysis for the WF₆–TiO₂ system shows a temperature-dependent transition from solid TiF₄(s) to gaseous TiF₄(g) above ~120 °C, enabling etching; at higher temperatures, tungsten oxide byproducts such as WO₃(s) convert to volatile species (e.g., WF₂O₂(g)).\"},{\"panel_id\":\"b\",\"text\":\"Equilibrium analysis for the WF₆–Al₂O₃ system shows that AlF₃(s) remains solid and stable over the entire temperature range, indicating fluorination without volatilization or etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Equilibrium Concentration (mol) | Material |\\n|------------------|----------------------------------|----------------|\\n| 0 | 1.00 | TiF₄ (s) |\\n| 0 | 0.00 | TiF₄ (g) |\\n| 0 | 0.65 | WO₃ (s) |\\n| 0 | 0.30 | WF₆ (g) |\\n| 0 | 0.00 | WF₂O₂ (g) |\\n| 50 | 1.00 | TiF₄ (s) |\\n| 50 | 0.00 | TiF₄ (g) |\\n| 50 | 0.65 | WO₃ (s) |\\n| 50 | 0.30 | WF₆ (g) |\\n| 50 | 0.00 | WF₂O₂ (g) |\\n| 100 | 0.00 | TiF₄ (s) |\\n| 100 | 1.00 | TiF₄ (g) |\\n| 100 | 0.65 | WO₃ (s) |\\n| 100 | 0.30 | WF₆ (g) |\\n| 100 | 0.00 | WF₂O₂ (g) |\\n| 150 | 0.00 | TiF₄ (s) |\\n| 150 | 1.00 | TiF₄ (g) |\\n| 150 | 0.60 | WO₃ (s) |\\n| 150 | 0.25 | WF₆ (g) |\\n| 150 | 0.10 | WF₂O₂ (g) |\\n| 200 | 0.00 | TiF₄ (s) |\\n| 200 | 1.00 | TiF₄ (g) |\\n| 200 | 0.40 | WO₃ (s) |\\n| 200 | 0.20 | WF₆ (g) |\\n| 200 | 0.40 | WF₂O₂ (g) |\\n| 250 | 0.00 | TiF₄ (s) |\\n| 250 | 1.00 | TiF₄ (g) |\\n| 250 | 0.10 | WO₃ (s) |\\n| 250 | 0.05 | WF₆ (g) |\\n| 250 | 0.90 | WF₂O₂ (g) |\\n| 300 | 0.00 | TiF₄ (s) |\\n| 300 | 1.00 | TiF₄ (g) |\\n| 300 | 0.00 | WO₃ (s) |\\n| 300 | 0.00 | WF₆ (g) |\\n| 300 | 1.00 | WF₂O₂ (g) |\\n| 350 | 0.00 | TiF₄ (s) |\\n| 350 | 1.00 | TiF₄ (g) |\\n| 350 | 0.00 | WO₃ (s) |\\n| 350 | 0.00 | WF₆ (g) |\\n| 350 | 1.00 | WF₂O₂ (g) |\\n| 400 | 0.00 | TiF₄ (s) |\\n| 400 | 1.00 | TiF₄ (g) |\\n| 400 | 0.00 | WO₃ (s) |\\n| 400 | 0.00 | WF₆ (g) |\\n| 400 | 1.00 | WF₂O₂ (g) |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | Equilibrium Concentration (mol) | Material |\\n|------------------|----------------------------------|----------------|\\n| 0 | 1.30 | AlF₃ (s) |\\n| 0 | 0.65 | WO₃ (s) |\\n| 0 | 0.30 | WF₆ (g) |\\n| 0 | 0.00 | WF₂O₂ (g) |\\n| 50 | 1.30 | AlF₃ (s) |\\n| 50 | 0.65 | WO₃ (s) |\\n| 50 | 0.30 | WF₆ (g) |\\n| 50 | 0.00 | WF₂O₂ (g) |\\n| 100 | 1.30 | AlF₃ (s) |\\n| 100 | 0.65 | WO₃ (s) |\\n| 100 | 0.30 | WF₆ (g) |\\n| 100 | 0.00 | WF₂O₂ (g) |\\n| 150 | 1.30 | AlF₃ (s) |\\n| 150 | 0.60 | WO₃ (s) |\\n| 150 | 0.25 | WF₆ (g) |\\n| 150 | 0.10 | WF₂O₂ (g) |\\n| 200 | 1.30 | AlF₃ (s) |\\n| 200 | 0.40 | WO₃ (s) |\\n| 200 | 0.20 | WF₆ (g) |\\n| 200 | 0.40 | WF₂O₂ (g) |\\n| 250 | 1.30 | AlF₃ (s) |\\n| 250 | 0.10 | WO₃ (s) |\\n| 250 | 0.05 | WF₆ (g) |\\n| 250 | 0.90 | WF₂O₂ (g) |\\n| 300 | 1.30 | AlF₃ (s) |\\n| 300 | 0.00 | WO₃ (s) |\\n| 300 | 0.00 | WF₆ (g) |\\n| 300 | 1.00 | WF₂O₂ (g) |\\n| 350 | 1.30 | AlF₃ (s) |\\n| 350 | 0.00 | WO₃ (s) |\\n| 350 | 0.00 | WF₆ (g) |\\n| 350 | 1.00 | WF₂O₂ (g) |\\n| 400 | 1.30 | AlF₃ (s) |\\n| 400 | 0.00 | WO₃ (s) |\\n| 400 | 0.00 | WF₆ (g) |\\n| 400 | 1.00 | WF₂O₂ (g) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 120°C.Reason: Below this temperature, the byproduct TiF4 is solid. Instead of removing material (etching), the process would simply convert the surface into a crust of solid fluoride salts, potentially increasing the film thickness and creating particles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The equilibrium model may predict low volatility at lower temperatures (e.g., 170°C). However, ALE bypasses this by using a sequential, non-equilibrium process. The BCl₃ step in ALE actively removes the fluorinated surface layer (e.g., as TiCl₄), shifting the local equilibrium and driving the reaction forward kinetically, enabling etching at temperatures where a continuous, equilibrium-driven process would stall.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The modeling predicts that the TiO₂ system forms volatile products like TiF₄(g) and WOFₓ(g), while the Al₂O₃ system forms non-volatile solids like AlF₃(s) or Al₂O₃(s) remains. This difference in product volatility is the thermodynamic origin of etching selectivity: TiO₂ can be removed as gases, whereas Al₂O₃ forms a stable, non-volatile layer that halts the reaction.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This provides a built-in etch stop capability. Engineers can design a stack where a thin Al₂O₃ layer is placed beneath or adjacent to the TiO₂ layer intended for removal. The WF₆-based etch will spontaneously stop on the Al₂O₃, allowing for precise, self-aligned patterning without the need for complex real-time endpoint detection, simplifying integration and improving yield.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_3.jpg","caption":"Figure 3. (a) QCM analysis of $\\mathrm{TiO_2}$ ALD followed by $50~\\mathrm{WF}_6$ doses at 120 and $220^{\\circ}C$ and (b) an enlarged view of the mass loading during the $\\mathrm{WF}_6$ doses, showing net mass loss during each $\\mathrm{WF}_6$ step at $220^{\\circ}C$ and little to no change at $120^{\\circ}C$","id":"train/atomic-layer-etching/experimental-usecase/46/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1050,"height":408,"image_format":"jpeg","image_sha256":"fe41672f1fc68795d2966f97ed76e1eb88a99d414fc1971156e50480ef554a6e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":530,"height":403},{"panel_id":"b","x":523,"y":7,"width":521,"height":394}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart represents the QCM data showing TiO₂ mass changes during ALD and subsequent WF₆ doses at 120°C and 220°C; only the 220°C sample exhibits noticeable mass loss per dose, indicating active etching.\"},{\"panel_id\":\"b\",\"text\":\"Magnified view of the WF₆ dosing period; 220°C shows stepwise mass loss (etching), while 120°C shows negligible change, confirming the reaction is thermally activated.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass Loading (ng/cm²) | Temperature (°C) | Condition |\\n|---------:|-----------------------|------------------|-----------|\\n| 18000 | 5200 | 120 |TiO₂ ALD |\\n| 18000 | 4000 | 220 |TiO₂ ALD |\\n| 18500 | 5500 | 120 | TiO₂ ALD |\\n| 18500 | 4200 | 220 | TiO₂ ALD |\\n| 19000 | 5650 | 120 | WF₆ dose |\\n| 19000 | 4100 | 220 | WF₆ dose |\\n| 19500 | 5750 | 120 | WF₆ dose |\\n| 19500 | 3950 | 220 | WF₆ dose |\\n| 20000 | 5800 | 120 | WF₆ dose |\\n| 20000 | 3700 | 220 | WF₆ dose |\\n| 20500 | 5800 | 120 | WF₆ dose |\\n| 20500 | 3300 | 220 | WF₆ dose |\\n| 21000 | 5800 | 120 | WF₆ dose |\\n| 21000 | 2600 | 220 | WF₆ dose |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Mass Loading (ng/cm²) | Temperature (°C) | Condition |\\n|---------:|-----------------------|------------------|-----------|\\n| 19920 | 5820 | 120 | |\\n| 19920 | 5720 | 220 | |\\n| 19940 | 5820 | 120 | WF₆ |\\n| 19940 | 5736 | 220 | WF₆|\\n| 19960 | 5820 | 120 | |\\n| 19960 | 5679 | 220 | |\\n| 20000 | 5820 | 120 | WF₆ |\\n| 20000 | 5700 | 220 | WF₆ |\\n| 20040 | 5820 | 120 | |\\n| 20040 | 5650 | 220 | |\\n| 20060 | 5820 | 120 | WF₆ |\\n| 20060 | 5658 | 220 | WF₆ |\\n| 20080 | 5820 | 120 | |\\n| 20080 | 5600 | 220 | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Deposit a TiO₂ film on the QCM sensor via ALD.\\n\\nStabilize the system at 220°C and the desired pressure.\\n\\nExpose the film to a sequence of 50 WF₆ doses, each followed by an inert purge.\\n\\nContinuously record the QCM frequency (converted to mass loading) throughout the dose sequence.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The lower temperature (120°C) is forced to protect the polymers. The trade-off is that no etching occurs at this temperature, so the desired material removal cannot be achieved with thermal WF₆ alone. An alternative approach, such as using a more reactive chemistry or a non-thermal activation method (like plasma), would be required, introducing complexity or potential damage.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies that a purely thermal WF₆ etch process is not compatible with such a low thermal budget. Since significant etching only occurs at 220°C, exceeding the 150°C limit, integration would require a fundamental process change. Options include performing the etch earlier in the flow (before temperature-sensitive layers) or developing a plasma-assisted WF₆ process that could lower the required substrate temperature.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Temperature drastically affects the etching rate. At 220°C, etching proceeds readily, while at 120°C, it is negligible. This is because the reaction is thermally activated; sufficient thermal energy is required to overcome the activation barrier for breaking Ti–O bonds and forming volatile titanium fluoride (TiF₄) and tungsten oxyfluoride products.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_7.jpg","caption":"Figure 7. (a) QCM analysis of $\\mathrm{WF}_6$ etching following 50, 100, and $200\\mathrm{TiO}_2$ ALD cycles on a bare Au QCM crystal at $220^{\\circ}C$ and 1.75 Torr. (b) Enlarged view of $\\mathrm{WF}_6$ etching showing an \"incubation\" period for the vapor etching that is dependent on the initial $\\mathrm{TiO}_2$ film thickness.","id":"train/atomic-layer-etching/experimental-usecase/46/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_7","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1047,"height":417,"image_format":"jpeg","image_sha256":"7e6d8e84e7eaedd45ddbf1f4e5a218e49e4efb48704cd166603ce7bea28d0168","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":548,"height":415},{"panel_id":"b","x":522,"y":2,"width":522,"height":408}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"QCM data showing TiO₂ etching for different thicknesses (50, 100, 200 ALD cycles) at 220 °C. Thin films etch immediately, while thick films show an incubation period (mass gain/plateau) before etching due to crystallization increasing chemical resistance.\"},{\"panel_id\":\"b\",\"text\":\"This mutliple line chart focusing on the mass loading of TiO₂ cycles and WF₆ doses over time, highlighting the effect of 50 doses at specific intervals.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass Loading (ng/cm²) | Condition |\\n|---------:|----------------------|-----------|\\n| 0 | 0 | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 0 | 0 | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 0 | 0 | 200 TiO₂ cycles + 50 WF₆ doses |\\n| 2000 | 250 | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 2000 | 90 | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 2000 |355 | 200 TiO₂ cycles + 50 WF₆ doses |\\n| 4000 | 552 | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 4000 | 405 | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 4000 | 700 | 200 TiO₂ cycles + 50 WF₆ doses |\\n| 6000 | 234 | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 6000 | 675 | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 6000 | 1100 | 200 TiO₂ cycles + 50 WF₆ doses |\\n| 8000 | 220 | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 8000 | 1555 | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 8000 | 1500 | 200 TiO₂ cycles + 50 WF₆ doses |\\n| 10000 | | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 10000 | 300 | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 10000 | 2000 | 200 TiO₂ cycles + 50 WF₆ doses |\\n| 12000 | | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 12000 | 0 | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 12000 | 2100 | 200 TiO₂ cycles + 50 WF₆ doses |\\n| 16000 | | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 16000 | | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 16000 | 3400 | 200 TiO₂ cycles + 50 WF₆ doses |\\n| 18000 | | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 18000 | | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 18000 | 3800 | 200 TiO₂ cycles + 50 WF₆ doses |\\n| 22000 | | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 22000 | | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 22000 | 3200 | 200 TiO₂ cycles + 50 WF₆ doses |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Mass Loading (ng/cm²) | Condition |\\n|---------:|----------------------|-----------|\\n| 200 | 500 | 50 TiO₂ cycles |\\n| 200 | 1700 | 100 TiO₂ cycles |\\n| 200 | 3300 | 200 TiO₂ cycles |\\n| 400 | 590 | 50 TiO₂ cycles |\\n| 400 | 1872 | 100 TiO₂ cycles |\\n| 400 | 3332 | 200 TiO₂ cycles |\\n| 600 | 680 | 50 TiO₂ cycles |\\n| 600 | 2096 | 100 TiO₂ cycles |\\n| 600 | 3500 | 200 TiO₂ cycles |\\n| 800 | 340 | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 800 | 1850 | 100 TiO₂ cycles + 50 WF₆ doses|\\n| 800 | 3600 | 200 TiO₂ cycles + 50 WF₆ doses |\\n| 1000 | 325 | 50 TiO₂ cycles + 50 WF₆ doses|\\n| 1000 | 1700 | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 1000 | 3620 | 200 TiO₂ cycles + 50 WF₆ doses|\\n| 1200 | 280 | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 1200 | 1500 | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 1200 | 3600 | 200 TiO₂ cycles + 50 WF₆ doses |\\n| 1400 | 258 | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 1400 | 1200 | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 1400 | 3600 | 200 TiO₂ cycles + 50 WF₆ doses |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The WF₆ vapor etch process introduces a significant challenge. In an ideal ALE process, each cycle removes a fixed thickness regardless of initial film thickness. Here, the thickness-dependent incubation means etching would initiate at different times across the wafer if the starting thickness varies, leading to severe non-uniformity. The trade-off for using this simpler vapor etch is loss of uniformity control.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Surface fluorination. The WF₆ reacts with the surface to form solid fluorides (TiFₓ) or adsorbed tungsten species. Because the underlying film is resistant (incubation), these heavy species accumulate on the surface, adding mass before the volatilization reaction (TiF₄ ↑) initiates material removal.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Crystalline resistance. The 50-cycle film is likely amorphous (disordered structure), making it chemically vulnerable and allowing immediate etching. The 200-cycle film has likely crystallized into a denser phase (e.g., Anatase), which is thermodynamically more stable and resistant to chemical attack, requiring an incubation period to roughen the surface and create active sites before rapid etching can proceed.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies the process requires a robust endpoint detection method and likely an over-etch period. Since the etch start time is unpredictable based on thickness, one cannot rely on timed etching alone. The process must monitor for the end of the incubation/etch transition (e.g., via mass spectrometry or optical emission) and then continue for a controlled over-etch to ensure complete clearance across all thickness variations.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_15_fig4.jpg","caption":"FIG.4. t t 3. t 300 4. t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t a t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t h t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t s t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t u t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t e t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t o t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t c t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t b t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t n t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t w t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t f t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t i t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t y t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t r t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t d t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t m t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t g t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t 1 t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t","id":"train/atomic-layer-etching/simulation-usecase/15/fig4","sample_id":"atomic-layer-etching/simulation-usecase/15/fig4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"},{"panel_id":"e","label":"multiple line chart"},{"panel_id":"f","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1347,"height":756,"image_format":"jpeg","image_sha256":"22c8441ecb4cb5b943ce8770507896f95fc80e80502568f1c917b076c9e5e309","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":22,"y":8,"width":409,"height":370},{"panel_id":"b","x":468,"y":8,"width":410,"height":370},{"panel_id":"c","x":931,"y":8,"width":408,"height":370},{"panel_id":"d","x":22,"y":389,"width":409,"height":367},{"panel_id":"e","x":469,"y":389,"width":408,"height":367},{"panel_id":"f","x":929,"y":389,"width":418,"height":367}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line graph shows the density of Si and Cl atoms at different Z positions along the y-axis, indicating that after the first chlorination step Cl remains near the surface while Si dominates the bulk.\"},{\"panel_id\":\"b\",\"text\":\"The multiple line graph shows the density of Si and Cl atoms at different Z positions along the y-axis, indicating that after the first ion bombardment step the near-surface Si density decreases and the Cl profile becomes slightly redistributed.\"},{\"panel_id\":\"c\",\"text\":\"The multiple line graph shows the density of Si and Cl atoms at different Z positions along the y-axis, indicating that after the fourth chlorination step Cl penetration into the near-surface region increases while Si density near the surface is further reduced.\"},{\"panel_id\":\"d\",\"text\":\"The multiple line graph shows the density of Si and Cl atoms at different Z positions along the y-axis, indicating that after the fourth ion bombardment step Si is further sputtered from the surface and the Cl distribution becomes more diffuse.\"},{\"panel_id\":\"e\",\"text\":\"The multiple line graph shows the density of Si and Cl atoms at different Z positions along the y-axis, indicating that after the eighth chlorination step a pronounced Cl-rich surface layer forms with a corresponding depletion of Si near the interface.\"},{\"panel_id\":\"f\",\"text\":\"The multiple line graph shows the density of Si and Cl atoms at different Z positions along the y-axis, indicating that after the eighth ion bombardment step the surface Si density continues to decrease while the Cl profile is partially flattened due to repeated sputtering and mixing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Z Position (Å) | Si Density (atom/ų) | Cl Density (atom/ų) |\\n|----------------|----------------------|----------------------|\\n| 0  | 0.075 | 0.000 |\\n| 5  | 0.048 | 0.000 |\\n| 10 | 0.049 | 0.000 |\\n| 15 | 0.047 | 0.000 |\\n| 20 | 0.052 | 0.000 |\\n| 25 | 0.049 | 0.000 |\\n| 30 | 0.050 | 0.000 |\\n| 35 | 0.049 | 0.000 |\\n| 40 | 0.049 | 0.000 |\\n| 45 | 0.050 | 0.001 |\\n| 50 | 0.049 | 0.002 |\\n| 55 | 0.002 | 0.068 |\\n| 60 | 0.000 | 0.000 |\"},{\"panel_id\":\"b\",\"text\":\"| Z Position (Å) | Si Density (atom/ų) | Cl Density (atom/ų) |\\n|----------------|----------------------|----------------------|\\n| 0  | 0.070 | 0.000 |\\n| 5  | 0.048 | 0.000 |\\n| 10 | 0.050 | 0.000 |\\n| 15 | 0.049 | 0.000 |\\n| 20 | 0.052 | 0.000 |\\n| 25 | 0.050 | 0.000 |\\n| 30 | 0.050 | 0.000 |\\n| 35 | 0.052 | 0.001 |\\n| 40 | 0.050 | 0.002 |\\n| 45 | 0.048 | 0.003 |\\n| 50 | 0.038 | 0.005 |\\n| 55 | 0.012 | 0.005 |\\n| 60 | 0.000 | 0.000 |\"},{\"panel_id\":\"c\",\"text\":\"| Z Position (Å) | Si Density (atom/ų) | Cl Density (atom/ų) |\\n|----------------|----------------------|----------------------|\\n| 0  | 0.075 | 0.000 |\\n| 5  | 0.046 | 0.000 |\\n| 10 | 0.048 | 0.000 |\\n| 15 | 0.049 | 0.000 |\\n| 20 | 0.051 | 0.000 |\\n| 25 | 0.050 | 0.000 |\\n| 30 | 0.052 | 0.002 |\\n| 35 | 0.048 | 0.004 |\\n| 40 | 0.050 | 0.003 |\\n| 45 | 0.042 | 0.004 |\\n| 50 | 0.035 | 0.015 |\\n| 55 | 0.008 | 0.008 |\\n| 60 | 0.000 | 0.000 |\"},{\"panel_id\":\"d\",\"text\":\"| Z Position (Å) | Si Density (atom/ų) | Cl Density (atom/ų) |\\n|----------------|----------------------|----------------------|\\n| 0  | 0.075 | 0.000 |\\n| 5  | 0.045 | 0.000 |\\n| 10 | 0.049 | 0.000 |\\n| 15 | 0.048 | 0.000 |\\n| 20 | 0.051 | 0.000 |\\n| 25 | 0.050 | 0.000 |\\n| 30 | 0.050 | 0.001 |\\n| 35 | 0.051 | 0.003 |\\n| 40 | 0.052 | 0.004 |\\n| 45 | 0.050 | 0.003 |\\n| 50 | 0.042 | 0.003 |\\n| 55 | 0.010 | 0.003 |\\n| 60 | 0.000 | 0.000 |\"},{\"panel_id\":\"e\",\"text\":\"| Z Position (Å) | Si Density (atom/ų) | Cl Density (atom/ų) |\\n|----------------|----------------------|----------------------|\\n| 0  | 0.072 | 0.000 |\\n| 5  | 0.048 | 0.000 |\\n| 10 | 0.046 | 0.000 |\\n| 15 | 0.048 | 0.000 |\\n| 20 | 0.050 | 0.000 |\\n| 25 | 0.051 | 0.000 |\\n| 30 | 0.050 | 0.001 |\\n| 35 | 0.050 | 0.003 |\\n| 40 | 0.052 | 0.002 |\\n| 45 | 0.045 | 0.004 |\\n| 50 | 0.038 | 0.009 |\\n| 55 | 0.010 | 0.015 |\\n| 60 | 0.000 | 0.000 |\"},{\"panel_id\":\"f\",\"text\":\"| Z Position (Å) | Si Density (atom/ų) | Cl Density (atom/ų) |\\n|----------------|----------------------|----------------------|\\n| 0  | 0.073 | 0.000 |\\n| 5  | 0.047 | 0.000 |\\n| 10 | 0.049 | 0.000 |\\n| 15 | 0.048 | 0.000 |\\n| 20 | 0.050 | 0.000 |\\n| 25 | 0.051 | 0.000 |\\n| 30 | 0.049 | 0.001 |\\n| 35 | 0.048 | 0.004 |\\n| 40 | 0.051 | 0.003 |\\n| 45 | 0.046 | 0.004 |\\n| 50 | 0.040 | 0.006 |\\n| 55 | 0.009 | 0.005 |\\n| 60 | 0.000 | 0.000 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies a Steady-State Regime. Since the thickness of the damaged/mixed layer stops growing and remains constant from Cycle 4 to Cycle 8, the process has stabilized. This means the Etch Rate per Cycle (EPC) is now constant and predictable, which is the ideal operating condition for manufacturing precision devices.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Amorphization (or Lattice Damage). The vertical drop in (a) represents an atomically sharp, ordered crystal. The gradual slope in (f) indicates that the repeated ion bombardment has disordered the lattice, creating a region of low-density amorphous silicon and mixing it with the surface, rather than maintaining a perfect crystal termination.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It represents the Total Etch Depth (or material removed). The receding boundary shows that the cyclic ALE process is successfully removing silicon layer-by-layer, resulting in a 10 \\\\AA trench depth after 8 cycles.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Contamination / Defect Generation. The tail shows that Chlorine is trapped inside the silicon lattice, not just on top. If a new layer is grown on this surface, the trapped Chlorine acts as a contaminant. It can diffuse out, causing corrosion, void formation, or electrical defects that ruin the crystal quality of the subsequent epitaxial growth.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_15_fig_9.jpg","caption":"FIG. 9. Si and Cl number density profiles at the beginning of $\\mathsf{Ar}^+$ ion bombardment step [panel (a)] and after $150\\mathrm{Ar}^+$ ion impacts [panel (b)]. The black dotted line corresponds to the density of Si at $300\\mathrm{K}$ (Ref. 43). The cycle in this case corresponds to $2255\\mathrm{Cl}_2$ molecule impacts and $1000\\mathrm{Ar}^+$ ion impacts.","id":"train/atomic-layer-etching/simulation-usecase/15/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/15/fig_9","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1342,"height":570,"image_format":"jpeg","image_sha256":"cd3d8f7dd46179c4a88b064813ed8928fdf19a17f7d27a51a5b6cd6f1ffc331b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":686,"y":21,"width":652,"height":540},{"panel_id":"a","x":3,"y":26,"width":675,"height":541}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure displays the depth profiles (density vs. Z-position) of Silicon (blue) and Chlorine (red) during an ALE cycle. Panel (a) shows the state immediately after chlorination but before ion bombardment, where a significant chlorine-rich layer exists at the surface (high Z).\"},{\"panel_id\":\"b\",\"text\":\"The label shows the state after 150 Argon ion impacts, revealing how the ion bombardment has begun to remove the surface material and push some chlorine deeper into the silicon lattice.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Z Position (Å) | Si Density (atom/ų) | Cl Density (atom/ų) |\\n|----------------|----------------------|----------------------|\\n| 0 | 0.060 | 0.000 |\\n| 5 | 0.047 | 0.000 |\\n| 10 | 0.048 | 0.000 |\\n| 15 | 0.048 | 0.000 |\\n| 20 | 0.049 | 0.000 |\\n| 25 | 0.050 | 0.000 |\\n| 30 | 0.053 | 0.000 |\\n| 35 | 0.045 | 0.005 |\\n| 40 | 0.051 | 0.002 |\\n| 45 | 0.048 | 0.002 |\\n| 50 | 0.038 | 0.009 |\\n| 55 | 0.005 | 0.012 |\\n| 60 | 0.000 | 0.000 |\"},{\"panel_id\":\"b\",\"text\":\"| Z Position (Å) | Si Density (atom/ų) | Cl Density (atom/ų) |\\n|----------------|----------------------|----------------------|\\n| 0 | 0.070 | 0.000 |\\n| 5 | 0.046 | 0.000 |\\n| 10 | 0.050 | 0.000 |\\n| 15 | 0.049 | 0.000 |\\n| 20 | 0.051 | 0.000 |\\n| 25 | 0.052 | 0.000 |\\n| 30 | 0.050 | 0.001 |\\n| 35 | 0.048 | 0.003 |\\n| 40 | 0.051 | 0.003 |\\n| 45 | 0.044 | 0.005 |\\n| 50 | 0.038 | 0.008 |\\n| 55 | 0.008 | 0.010 |\\n| 60 | 0.000 | 0.000 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Residue vs. Damage. Stopping at 150 impacts leaves a high concentration of residual chlorine (red line is still prominent), which could contaminate the next layer. However, continuing to 1000 impacts ensures a cleaner surface but risks deeper ion damage to the underlying silicon crystal structure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This is caused by Knock-on Implantation or Mixing. The energetic Ar+ ions transfer momentum to the surface chlorine atoms, driving some of them deeper into the silicon lattice rather than just sputtering them off. This creates a mixed, amorphous Si-Cl sub-surface layer.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Increased Roughness. The gradual density transition indicates that the surface is not atomically flat but rather rough or intermixed, which can degrade carrier mobility in the final semiconductor device.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Physical Sputtering / Ion Bombardment. The 150 Ar^+ ion impacts have physically sputtered away the top-most layer of chlorinated silicon, reducing the total amount of chlorine and receding the surface (Z position decreases).\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_6.jpg","caption":"Fig. 6. Line plots illustrating the effects of the gap distance on precursor separation, of which operating condition is (a) Case 1, (b) Case 2, (c) Case 3, and (d) Case 4 as described in Table 3. The shaded area indicates the precursor intermixing zone.","id":"train/atomic-layer-etching/simulation-usecase/16/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1175,"height":989,"image_format":"jpeg","image_sha256":"eaaf880d1caa39e77c462eddae077ad8ca95c74fbd6a5447e774347a1eee04fa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":3,"y":507,"width":572,"height":479},{"panel_id":"b","x":607,"y":4,"width":565,"height":483},{"panel_id":"a","x":6,"y":2,"width":562,"height":469},{"panel_id":"d","x":596,"y":507,"width":574,"height":477}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the mole fraction of HF and TMA at different positions along the x-axis.\"},{\"panel_id\":\"b\",\"text\":\"The line chart displays the mole fraction of HF and TMA with sharp transitions at specific positions related to the tool geometry.\"},{\"panel_id\":\"c\",\"text\":\"The line chart shows the mole fraction of HF and TMA with sharp transitions at specific positions related to the tool geometry.\"},{\"panel_id\":\"d\",\"text\":\"The line chart illustrates the mole fraction of HF and TMA with sharp transitions at specific positions related to the tool geometry.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0.2 |0.12|\\n|-50 | 0.21 |0.13|\\n|0 | 0.15 |0.18|\\n|50 | 0.13 |0.26|\\n|100 | 0.11 |0.25|\"},{\"panel_id\":\"b\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0 |0|\\n|-50 | 0.67 |0|\\n|0 | 0 |0|\\n|50 | 0 |0.55|\\n|100 | 0 |0|\"},{\"panel_id\":\"c\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0 |0|\\n|-50 | 0.67 |0|\\n|0 | 0 |0|\\n|50 | 0 |0.55|\\n|100 | 0 |0|\"},{\"panel_id\":\"d\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0 |0|\\n|-50 | 0.67 |0|\\n|0 | 0 |0|\\n|50 | 0 |0.55|\\n|100 | 0 |0|\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The width of the slits is equal to the width of the plateau, which is about 30 mm.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Part of the gases penetrates into the gas shield regions, which is why there is no precise cut-off.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No there will not be ALE, as TMA and HF already mix in the gas phase. This can result in continuous etching.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Low gap sizes usually mean that lower flows of precursor are required so there will be less gas consumption.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_7.jpg","caption":"Fig. 7. Line plots illustrating the effects of the $\\mathbb{N}_2$ flow rate on precursor separation, of which operating condition is (a) Case 1, (b) Case 5, (c) Case 6, and (d) Case 7 as described in Table 3. The shaded area indicates the precursor intermixing zone.","id":"train/atomic-layer-etching/simulation-usecase/16/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_7","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1183,"height":992,"image_format":"jpeg","image_sha256":"5f2d58bd9ff82735d591ed68d62df8c6bfe038b7ff2030104038dab63d8fa42c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":4,"y":511,"width":568,"height":479},{"panel_id":"b","x":608,"y":0,"width":570,"height":487},{"panel_id":"a","x":8,"y":1,"width":564,"height":476},{"panel_id":"d","x":604,"y":511,"width":573,"height":477}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the mole fraction of HF and TMA at different positions along the x-axis. Where the blue area depicts gas mixing.\"},{\"panel_id\":\"b\",\"text\":\"The line chart shows the mole fraction of HF and TMA at different positions along the x-axis. Where the blue area depicts gas mixing.\"},{\"panel_id\":\"c\",\"text\":\"The line chart shows the mole fraction of HF and TMA at different positions along the x-axis. Where the blue area depicts gas mixing.\"},{\"panel_id\":\"d\",\"text\":\"The line chart shows the mole fraction of HF and TMA at different positions along the x-axis. Where the blue area depicts gas mixing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0.2 |0.12|\\n|-50 | 0.21 |0.13|\\n|0 | 0.15 |0.18|\\n|50 | 0.13 |0.26|\\n|100 | 0.11 |0.25|\"},{\"panel_id\":\"b\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0.09 |0.03|\\n|-50 | 0.11 |0.04|\\n|0 | 0.05 |0.06|\\n|50 | 0.03 |0.12|\\n|100 | 0.03 |0.11|\"},{\"panel_id\":\"c\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0.05 |0.01|\\n|-50 | 0.08 |0.01|\\n|0 | 0.03|0.03|\\n|50 | 0.02 |0.08|\\n|100 | 0.01 |0.06|\"},{\"panel_id\":\"d\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0.02 |0.00|\\n|-50 | 0.05 |0.00|\\n|0 | 0.02|0.02|\\n|50 | 0.01 |0.05|\\n|100 | 0.00 |0.02|\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes this could be a problem, in that case the flows of reactants should also increase.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TMA slit is located on the right side as there the TMA signal is the highest.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The gas mixing will result in continuous etching, which is detrimental to ALE.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes there is.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_8.jpg","caption":"Fig. 8. Line plots illustrating the effects of the precursor flow rate on precursor separation, of which operating condition is (a) Case 1, (b) Case 8, (c) Case 9, and (d) Case 10 as described in Table 3. The shaded area indicates the precursor intermixing zone.","id":"train/atomic-layer-etching/simulation-usecase/16/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_8","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1183,"height":992,"image_format":"jpeg","image_sha256":"3316f48079e0f1a72eef219e27cc42f153a17413c0527c9ba4491ae86cffd577","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":5,"y":516,"width":558,"height":472},{"panel_id":"b","x":604,"y":1,"width":577,"height":489},{"panel_id":"a","x":5,"y":1,"width":572,"height":475},{"panel_id":"d","x":599,"y":518,"width":577,"height":470}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the mole fraction of HF and TMA at various positions along the x-axis, where the mixing of HF and TMA is shown blue.\"},{\"panel_id\":\"b\",\"text\":\"The line chart displays the mole fraction of HF and TMA at different positions, where the mixing of HF and TMA is shown blue.\"},{\"panel_id\":\"c\",\"text\":\"The line chart illustrates the mole fraction of HF and TMA at varying positions, where the mixing of HF and TMA is shown blue.\"},{\"panel_id\":\"d\",\"text\":\"The line chart depicts the mole fraction of HF and TMA at different positions, where the mixing of HF and TMA is shown blue.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0.2 |0.12|\\n|-50 | 0.21 |0.13|\\n|0 | 0.15 |0.18|\\n|50 | 0.13 |0.26|\\n|100 | 0.11 |0.25|\"},{\"panel_id\":\"b\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0.27 |0.14|\\n|-50 | 0.29 |0.16|\\n|0 | 0.19 |0.22|\\n|50 | 0.12 |0.31|\\n|100 | 0.11 |0.30|\"},{\"panel_id\":\"c\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0.33 |0.13|\\n|-50 | 0.35 |0.14|\\n|0 | 0.2 |0.22|\\n|50 | 0.11 |0.4|\\n|100 | 0.11 |0.38|\"},{\"panel_id\":\"d\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0.4 |0.11|\\n|-50 | 0.42 |0.12|\\n|0 | 0.25 |0.26|\\n|50 | 0.08 |0.43|\\n|100 | 0.08 |0.43|\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The flow of nitrogen in the gas shield can be greatly increased.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is likely that there will be continuous etching, even though the mole fractions of TMA and HF in their designated locations are way larger.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TMA has a higher mole fraction in the HF region as compared to HF in the TMA region. So TMA diffuses more into the other region.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.21\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_10.jpg","caption":"FIG. 10. Fluxes to the wafer as a function of radius for the $\\mathrm{Ar / c - C_4F_8}$ CCP. (a) Neutral and (b) ion fluxes. $\\mathrm{CF}_3$ , $\\mathrm{C}_3\\mathrm{F}_5$ , and $\\mathrm{F}$ are the dominant radicals. $\\mathrm{Ar^{+}}$ , $\\mathrm{C}_2\\mathrm{F}_4^+$ , and $\\mathrm{CF}_x^+$ $(x = 1 - 3)$ are the dominant ions.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_10","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":378,"height":756,"image_format":"jpeg","image_sha256":"d8be253135218ca1582aa9a36813b4ea8219a067fa7c597b496edbc24f813d07","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":376,"height":376},{"panel_id":"b","x":1,"y":383,"width":377,"height":372}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the neutral flux of various species as a function of radius of the wafer.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays the ion flux of ions as a function of radius of the wafer.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Species | Radius (cm) | Neutral Flux ($10^{17}$ cm$^{-2}$s$^{-1}$) | \\n|---|---|---|\\n|CF3 | 0 | 5.82 | \\n|CF3 | 4 | 5.82 | \\n|CF3 | 10 | 5.88| \\n|CF2 | 0 | 4.57 | \\n|CF2 | 4 | 4.59 | \\n|CF2 | 10 | 4.61| \\n|CF | 0 | 4.3 |\\n|CF | 4 | 4.26 |\\n|CF | 10 | 4.28 |\\n|C2F6 | 0 | 2.66 |\\n|C2F6 | 4 | 2.68 |\\n|C2F6 | 10 | 2.74 |\\n|C3F5 | 0 | 1.77 |\\n|C3F5 | 4 | 1.75 |\\n|C3F5 | 10 |1.77 |\\n|C4F7 | 0 | 1.46 |\\n|C4F7 | 4 | 1.46|\\n|C4F7 | 10 | 1.46 |\\n|C2F4 | 0 | 0.91 |\\n|C2F4 | 4 | 0.89 |\\n|C2F4 | 10 | 0.91 |\\n|CF4 | 0 | 0.78 |\\n|CF4 | 4 | 0.68|\\n|CF4 | 10 | 0.48 |\\n|F | 0 |0.68 |\\n|F | 4 | 0.68 |\\n|F | 10 | 0.72 |\"},{\"panel_id\":\"b\",\"text\":\"| Species | Radius (cm) | Ion Flux ($10^{15}$ cm$^{-2}$s$^{-1}$) |\\n|---|---|---|\\n| Ar+ | 0 | 12.9 | \\n| Ar+ | 4 | 16.7 | \\n| Ar+ | 10 | 18.2 | \\n|C2F4+ | 0 | 8.5 | \\n|C2F4+ | 4 | 10.1 | \\n|C2F4+ | 10 | 9.7 | \\n|C3F5+ | 0 | 4.9 | \\n|C3F5+ | 4 | 6.7 | \\n|C3F5+ | 10 | 6.6 | \\n|CF+ + CF2+ + CF3+ | 0 | 3.8 |\\n|CF+ + CF2+ + CF3+ | 4 | 5.6 |\\n|CF+ + CF2+ + CF3+ | 10 | 5.4 |\\n|Ar+ (Step 2) | 0 | 2.3 | \\n|Ar+ (Step 2) | 4 | 2.2 | \\n|Ar+ (Step 2) | 10 | 2.2 | \\n|F + | 0 | 0.5 |\\n|F + | 4 | 0.45 |\\n|F + | 10 | 0.39 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The argon ion is the primary species responsible for the non-uniformity observed near the edge of the wafer. The fluxes of other ions remain relatively flat across the radius. The argon ion flux exhibits a distinct rise from the center to the edge of the wafer.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"CF3.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At ~ 5 cm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"CF4, C2F6 and C2F4.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_16.jpg","caption":"FiG. 16. Fluxes to the wafer as a function of radius for the nonsinusoidal bias PALE process. (a) Neutral and (b) ion fluxes. $\\mathrm{CF}_2$ CF,and $\\mathrm{CF}_3$ are the dominant fluorine containing neutral radicals. $\\mathrm{Ar^{+}}$ $\\mathrm{CF}_3^+$ $\\mathrm{CF}_2^+$ and $\\mathrm{CF^{+}}$ are the dominant ion fluxes.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_16","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_16","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_16.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":378,"height":759,"image_format":"jpeg","image_sha256":"0e042de76bb3458cb08db49cafae86276ebac58708df0b8d16fcf0b308c644e6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":0,"width":371,"height":377},{"panel_id":"b","x":0,"y":392,"width":377,"height":365}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the neutral flux of various species as a function of wafer radius (0 - 6 cm).The flux is dominated by CF3 radical.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the ion flux of various species as a function of of wafer radius (0 - 6 cm). The flux is dominated by Ar(+).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Radius (cm) | CF2 flux (10¹⁷ cm⁻² s⁻¹) | CF flux (10¹⁷ cm⁻² s⁻¹) | C flux (10¹⁷ cm⁻² s⁻¹) | CF3 (×2) flux (10¹⁷ cm⁻² s⁻¹) | C2F3 (×2) flux (10¹⁷ cm⁻² s⁻¹) | F (×2) flux (10¹⁷ cm⁻² s⁻¹) | C2F4 (×2) flux (10¹⁷ cm⁻² s⁻¹) | C2F5 (×2) flux (10¹⁷ cm⁻² s⁻¹) |\\n|---|---|---|---|---|---|---|---|---|\\n| 0 | 5.75 | 3.75 | 2.82 | 1.65 | 1.25 | 0.9 | 0.45 | 0.3 |\\n| 3 | 5.64 | 3.79 | 2.68 | 1.61 | 1.34 | 0.82 | 0.51 | 0.32 |\\n| 6| 5.79 | 4.12 | 2.53 | 1.54 | 1.75 | 0.63 | 0.63 | 0.33 |\"},{\"panel_id\":\"b\",\"text\":\"| Radius (cm) | Ar+ flux (10¹⁵ cm⁻² s⁻¹) | CF3+ flux (10¹⁵ cm⁻² s⁻¹) | CF2+ flux (10¹⁵ cm⁻² s⁻¹) | CF+ flux (10¹⁵ cm⁻² s⁻¹) | C2F4+ flux (10¹⁵ cm⁻² s⁻¹) | C2F5+ + C3F5+ flux (10¹⁵ cm⁻² s⁻¹) | F+ flux (10¹⁵ cm⁻² s⁻¹) |\\n|---|---|---|---|---|---|---|---|\\n| 0 | 7 | 3.5 | 2.6 | 2.4 | 0.52 | 0.52 | 0.12 |\\n| 3 | 6 | 2.9 | 2.3 | 2.14 | 0.52 | 0.52 | 0.07 |\\n| 6 | 4.6 | 2.6 | 1.75 | 1.75 | 0.52 | 0.52 | 0.07 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ar(+).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"C2F5(+) + C3F5(+), C2F4(+), CF(+), CF2(+), CF3(+), Ar(+)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At the center of the wafer (r = 0 cm).Since physical sputtering is driven by the bombardment of ions, the region receiving the highest flux of heavy Argon ions will experience the most intense sputtering. The Ar(+) flux shows its peak at the center of the wafer and decreases towards the edge.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"CF2, CF, C, C2F3, CF3, F, C2F4, C2F5\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_3.jpg","caption":"FIG. 3. (Color online) Ion properties for the PALE cycle. (a) Ion fluxes to the wafer as a function of radius. $\\mathrm{Cl}^+$ is the major ion during step 1 (passivation) due to dissociation of the $\\mathrm{Cl}_2$ feedstock. The $\\mathrm{Ar^{+}}$ flux is higher during step 2 (etching) step due to lack of any competing processes. (b) Total IEDs averaged over the wafer. Low ion energies are necessary to minimize etching during step 1 while higher ion energies in step 2 enable etching of the $\\mathrm{SiCl}_x$ passivation. (IEADs are plotted using a log scale over 2 decades.)","id":"train/atomic-layer-etching/simulation-usecase/19/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"contour heatmap"},{"panel_id":"c","label":"contour heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":375,"height":808,"image_format":"jpeg","image_sha256":"60b54ffaf3f0daa8efa070f8c2f4d6ec47a3d6ab6f9bb6d9ff4d9166fa13c555","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":368,"height":364},{"panel_id":"b","x":8,"y":372,"width":201,"height":442},{"panel_id":"c","x":202,"y":370,"width":170,"height":437}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the ion flux of different ions (Ar+, Cl+, and Cl2+) for step 1 (passivation) and step 2(etching) at various radii from the center of the wafer.\"},{\"panel_id\":\"b\",\"text\":\"The heatmap displays the ion energy and angular distribution (IEAD) for step 1 (passivation).\"},{\"panel_id\":\"c\",\"text\":\"The heatmap displays the ion energy and angular distribution (IEAD) for step 2 (etching).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Radius (cm) | Ion Flux (1016 cm-2s-1) | Species|\\n|---|---|---|\\n| 0 | 7.93 | Ar (+) Step 2|\\n| 3 | 7.27 | Ar (+) Step 2|\\n| 6 | 5.18 | Ar (+) Step 2|\\n| 0 | 1.35 | Ar (+) Step 1|\\n| 3 | 1.2 | Ar (+) Step 1|\\n| 6 | 0.7 | Ar (+) Step 1|\\n| 0 | 3.6 | Cl (+) Step 1|\\n| 3 | 3.1 | Cl (+) Step 1|\\n| 6 | 1.89 | Cl (+) Step 1|\\n| 0 | 0.5 | Cl2(+) Step 1|\\n| 3 | 0.5 | Cl2(+) Step 1|\\n| 6 | 0.5 | Cl2(+) Step 1|\"},{\"panel_id\":\"b\",\"text\":\"| Angle (deg) | Energy (eV) | Intensity |\\n|---|---|---|\\n| -15 | 14 | 0.01 |\\n| 0 | 14 | 0.01 |\\n| 15 | 14 | 0.01 |\\n| -15 | 16 | 0.69|\\n| 0 | 16 | 0.69 |\\n| 15 | 16 | 0.36 |\\n| -15 | 17 | 0.69 |\\n| 0 | 17 | 1 |\\n| 15 | 17 | 0.36 |\\n| -15 | 21 | 0.01 |\\n| 0 | 21 | 0.01 |\\n| 15 | 21 | 0.01 |\"},{\"panel_id\":\"c\",\"text\":\"| Angle (deg) | Energy (eV) | Intensity |\\n|---|---|---|\\n| 0 | 42 | 0.01 |\\n| 0 | 51 | 0.85 |\\n| -9 | 51 | 0.01 |\\n| 9 | 51 | 0.01|\\n| 0 | 57 | 1 |\\n| 9 | 57 | 0.01 |\\n| -9 | 57 | 0.01 |\\n| 0 | 61 | 0.01 |\\n| 9 | 17 | 0.01 |\\n| -9 | 21 | 0.01 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cl (+).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cl2 (+).\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Perpendicular to the wafer surface (0 degrees).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ ± 10 degrees.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_3.jpg","caption":"Figure 3. Various contributions to the reaction FEP for the CVE1 reaction of $\\mathrm{TiO}_2 + \\mathrm{HF}\\rightarrow \\mathrm{TiF}_4 + \\mathrm{H}_2\\mathrm{O}$ at an HF reactant pressure of 0.2 Torr.","id":"train/atomic-layer-etching/simulation-usecase/20/figure_3","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":544,"height":502,"image_format":"jpeg","image_sha256":"66f7456d5ca0d56dc4ddcfd2ac98b1ca36080a79c49c87506e0b7b2843dd73a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":539,"height":498}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure plots the thermodynamic contributions to the reaction free energy profile (FEP) for the etching reaction TiO₂(bulk) + 4HF(g) → TiF₄(g) + 2H₂O(g) as a function of temperature (0–800 K) at a constant HF pressure of 0.2 Torr. It shows how the electronic energy (ΔE), zero-point correction (ΔE+ΔZPE), Gibbs free energy (ΔG), and entropic term (TΔS) evolve with temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature [K] | E [eV / TiO2] | |\\n|---|---|----|\\n| 0 | -1.4 | ΔE |\\n| 0 | -1.2 | ΔE + ΔZPE |\\n| 0 | -1.2 | ΔG |\\n| 0 | 0.0 | TΔS |\\n| 0 | 0.0 | ΔW |\\n| 0 | 0.0 | RT ln(Q) |\\n| 200 | -1.4 | ΔE |\\n| 200 | -1.2 | ΔE + ΔZPE |\\n| 200 | -1.2 | ΔG |\\n| 200 | -0.1 | TΔS |\\n| 200 | -0.03 | ΔW |\\n| 200 | -0.01 | RT ln(Q) |\\n| 400 | -1.4 | ΔE |\\n| 400 | -1.2 | ΔE + ΔZPE |\\n| 400 | -1.1 | ΔG |\\n| 400 | -0.2 | TΔS |\\n| 400 | -0.1 | ΔW |\\n| 400 | -0.02 | RT ln(Q) |\\n| 600 | -1.4 | ΔE |\\n| 600 | -1.2 | ΔE + ΔZPE |\\n| 600 | -1.0 | ΔG |\\n| 600 | -0.4 | TΔS |\\n| 600 | -0.1 | ΔW |\\n| 600 | -0.04 | RT ln(Q) |\\n| 800 | -1.4 | ΔE |\\n| 800 | -1.2 | ΔE + ΔZPE |\\n| 800 | -0.8 | ΔG |\\n| 800 | -0.6 | TΔS |\\n| 800 | -0.1 | ΔW |\\n| 800 | -0.1 | RT ln(Q) |\\n| 1000 | -1.4 | ΔE |\\n| 1000 | -1.2 | ΔE + ΔZPE |\\n| 1000 | -0.7 | ΔG |\\n| 1000 | -0.7 | TΔS |\\n| 1000 | -0.2 | ΔW |\\n| 1000 | -0.1 | RT ln(Q) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes, it is spontaneous. At 300 K, the Gibbs free energy (ΔG) is approximately −1.2 eV, and a negative ΔG indicates a spontaneous reaction.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"700 K is better for ensuring spontaneity (more negative ΔG). The trade-off is the higher thermal budget, which may damage temperature-sensitive materials or increase energy costs, whereas 400 K offers lower thermal stress but may result in a non-spontaneous or slower etch rate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ΔG becomes more negative (more spontaneous) as temperature increases. This is primarily driven by the large, positive TΔS term (entropy gain) due to the production of gas-phase molecules (TiF₄ and H₂O) from a solid and gas, which outweighs the endothermic enthalpy contribution at higher temperatures.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies that HF gas etching of TiO₂ is not feasible at room temperature (ΔG > 0). To enable etching, the process must be heated above ~500 K, or an alternative, more reactive chemistry (e.g., plasma activation) must be used to lower the kinetic barrier and drive the reaction at lower temperatures.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_4.jpg","caption":"Figure 4. FEPs for the CVE1, CVE2, CVE3, SL1 SL2, and SL3 reactions for HF interacting with $\\mathrm{TiO_2}$ versus temperature. The labels X and Y correspond to the values listed in Table 1.","id":"train/atomic-layer-etching/simulation-usecase/20/figure_4","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":563,"height":505,"image_format":"jpeg","image_sha256":"bcfcfc8bca6256ccdac3e9f91a0ae8069bab603525b3643e46503284c1dfdec4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":556,"height":501}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This multiple line chart image compares the free energy profiles (FEPs) of three Continuous Vapor Etching (CVE) reactions (red, red-dashed, blue) with their corresponding self-limiting (SL) surface modification reactions (green, green-dashed, yellow). For ideal Atomic Layer Etching (ALE), the SL reaction must be spontaneous (ΔG < 0) while the CVE reaction remains non-spontaneous (ΔG > 0), defining a “Goldilocks” window where the surface is modified but bulk etching is suppressed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature [K] | ΔG [ev / TiO2] | Materials |\\n|--------|---------|---------|\\n| 0 | -1.2 | CVE1(Y1) |\\n| 0 | 2.1 | CVE2(Y2) |\\n| 0 | 2.2 | CVE3(Y3) |\\n| 0 | -2.2 | SL1(X1) |\\n| 0 | -1.1 | SL2(X2) |\\n| 0 | -0.1 | SL3(X3) |\\n| 200 | -1.2 | CVE1(Y1) |\\n| 200 | 1.7 | CVE2(Y2) |\\n| 200 | 1.9 | CVE3(Y3) |\\n| 200 | -1.6 | SL1(X1) |\\n| 200 | -0.8 | SL2(X2) |\\n| 200 | 0.2 | SL3(X3) |\\n| 400 | -1.1 | CVE1(Y1) |\\n| 400 | 1.4 | CVE2(Y2) |\\n| 400 | 1.7 | CVE3(Y3) |\\n| 400 | -0.9 | SL1(X1) |\\n| 400 | -0.5 | SL2(X2) |\\n| 400 | 0.6 | SL3(X3) |\\n| 600 | -1.0 | CVE1(Y1) |\\n| 600 | 1.1 | CVE2(Y2) |\\n| 600 | 1.4 | CVE3(Y3) |\\n| 600 | -0.3 | SL1(X1) |\\n| 600 | -0.2 | SL2(X2) |\\n| 600 | 1.0 | SL3(X3) |\\n| 800 | -0.8 | CVE1(Y1) |\\n| 800 | 0.9 | CVE2(Y2) |\\n| 800 | 1.2 | CVE3(Y3) |\\n| 800 | 0.3 | SL1(X1) |\\n| 800 | 0.1 | SL2(X2) |\\n| 800 | 1.3 | SL3(X3) |\\n| 1000 | -0.7 | CVE1(Y1) |\\n| 1000 | 0.6 | CVE2(Y2) |\\n| 1000 | 1.0 | CVE3(Y3) |\\n| 1000 | 0.9 | SL1(X1) |\\n| 1000 | 0.4 | SL2(X2) |\\n| 1000 | 1.6 | SL3(X3) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"CVE1: 4 HF molecules.\\n\\nCVE2: 2 HF molecules.\\n\\nCVE3: 3 HF molecules.\\n\\nConclusion: CVE1 consumes the most reactant (4 HF).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The CVE2 pathway is not viable for a spontaneous, continuous etch. Its ΔG remains positive (non-spontaneous) across the entire temperature range shown, unlike CVE1 which becomes favorable above ~700 K. To achieve continuous etching, one must use conditions that favor CVE1, accepting a higher thermal budget.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A CVE pathway produces volatile gas-phase products (e.g., TiF₄(g)), leading to complete material removal. An SL pathway produces a modified, non-volatile surface layer (e.g., TiF₄(surf)). The SL reactions are always more exothermic (more negative ΔE) than their CVE counterparts because forming a surface layer is energetically cheaper than completely breaking bonds to release gas molecules.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies that isotropic, continuous etching of TiO₂ with HF gas requires a high-temperature process (>700K). At lower temperatures, the reaction will self-limit, only modifying the surface. Therefore, for patterning, one must either operate at high temperature or use an alternative activation method (like plasma) to drive the CVE pathway at lower temperatures.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_5.jpg","caption":"Figure 5. FEPs of CVE1 and SL1 showing three regions: preferred self-limiting, preferred etching, and purely etching. SL1 and CVE1 line crossing occurs at $360~\\mathrm{K}$ $(87^{\\circ}\\mathrm{C})$","id":"train/atomic-layer-etching/simulation-usecase/20/figure_5","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_5","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":561,"height":495,"image_format":"jpeg","image_sha256":"a142268e0d7643f523a6e21bc1104902ae357e96950f12123db3467997d4af4f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":555,"height":488}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure plots the Free Energy Profiles (FEPs) for the CVE1 (continuous vapor etch) and SL1 (self-limiting surface reaction) pathways for HF interacting with TiO₂. The lines cross at 360 K, defining three regimes: below 360 K, SL1 is favored (self-limiting); between 360 K and ~700 K, CVE1 becomes progressively more favored (preferred etching); above 700 K, CVE1 is strongly favored (purely etching).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature [K] | ΔG [eV / TiO2] | Label | Region |\\n|-----------------|---------------------------|----------|-----------------------|\\n| 0 | -2.2 | SL1(X1) | Preferred self-limiting |\\n| 0 | -1.1 | CVE1(Y2) | Preferred self-limiting |\\n| 200 | -1.5 | SL1(X1) | Preferred self-limiting |\\n| 200 | -1.1 | CVE1(Y2) | Preferred self-limiting |\\n| 400 | -0.9 | SL1(X1) | Preferred etching |\\n| 400 | -1.0 | CVE1(Y2) | Preferred etching |\\n| 600 | -0.3 | SL1(X1) | Preferred etching |\\n| 600 | -0.9 | CVE1(Y2) | Preferred etching |\\n| 800 | 0.2 | SL1(X1) | Purely etching |\\n| 800 | -0.8 | CVE1(Y2) | Purely etching |\\n| 1000 | 0.8 | SL1(X1) | Purely etching |\\n| 1000 | -0.7 | CVE1(Y2) | Purely etching |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Max Temperature: 360 K (87°C).Above 360 K, the preference switches; the bulk etching reaction (CVE1) becomes more energetically favorable than the surface modification (SL1).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"300 K (Self-limiting regime): Pro: Excellent depth control, atomic-layer precision. Con: Very slow or negligible material removal rate.\\n800 K (Purely etching regime): Pro: High etch rate, fast throughput. Con: Poor depth control, isotropic etching.\\nTrade-off: The choice is between controllability (low temp) and throughput (high temp). For precise patterning, a low-temperature, self-limiting process is necessary, sacrificing speed.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The shift is driven by entropy. The CVE1 pathway produces more gas molecules, granting it a larger, favorable entropy term (+TΔS). As temperature rises, this term dominates the free energy (ΔG = ΔH - TΔS), making the complete volatilization reaction (CVE1) increasingly favorable over the surface passivation reaction (SL1).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, it should be operated below 360 K. The SL1 pathway is thermodynamically favored over CVE1. This makes the reaction inherently self-limiting, as it preferentially forms a stable surface layer rather than volatile products, ensuring precise, layer-by-layer removal essential for controlled etching.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_26_fig_5.jpg","caption":"FIG. 5. EPCs of Si PA-ALE processes obtained from MD simulations as functions of $\\mathrm{Ar^{+}}$ ion incident energy. The solid and dashed lines represent those for the thin and thick Cl layer deposition cases. Other ALE conditions are listed in Table I. The value of EPC given here is the average of etched depths per cycle from C3 to C6.","id":"train/atomic-layer-etching/simulation-usecase/26/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/26/fig_5","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/Surface damage formation during atomic layer etching of silicon with chlorine adsorption.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":639,"height":439,"image_format":"jpeg","image_sha256":"7ee32e3c7d7a9deb9201add27ae08e0076fdb0ff6a158685cd4319ad1e00acb7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":639,"height":439}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the relationship between Ar+ ion incident energy (in eV) and etch per cycleEPC (in Å) for thin and thick Cl layer deposition methods.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Energy (eV) | Thin Cl layer deposition (Å) | Thick Cl layer deposition (Å) |\\n|-------------|-------------------------------|--------------------------------|\\n| 0 | 0 | 0 |\\n| 10 | 1 | 2 |\\n| 20 | 2 | 4 |\\n| 30 | 4 | 6 |\\n| 40 | 7 | 10 |\\n| 50 | 11 | 14 |\\n| 60 | 16 | 19 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The value of EPC given here is the average of etched depths per cycle from C3 to C6.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Because from the image, it can be seen that the EPC is higher in the thick Cl layer deposition case than in the thin Cl layer deposition case\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 20 eV Ar+ ion energy, the EPC correspond to Si monolayer as follows\\n1. The simulated EPCs for thin Cl layer deposition is 1.6 Å/cycle = 1.2 Si Monolayer/cycle\\n2. The simulated EPC for thick Cl layer deposition is 4.2 Å/cycle = 3 Si Monolayer/cycle.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_26_fig_7.jpg","caption":"FIG. 7. Thicknesses of damaged-layers formed during the Si PA-ALE processes, obtained from MD simulations, as functions of the $\\mathrm{Ar^{+}}$ ion incident energy. The solid and dashed lines represent those for thin and thick Cl layer deposition cases. Other ALE conditions are listed in Table I. The value of the thickness here is the average of those over all six cycles, i.e., from C1 to C6.","id":"train/atomic-layer-etching/simulation-usecase/26/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/26/fig_7","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/Surface damage formation during atomic layer etching of silicon with chlorine adsorption.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":639,"height":466,"image_format":"jpeg","image_sha256":"d550cae19c19658303033ad1468fcbda333a3d9a9f8b4776d3189004dd178a4b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":8,"width":631,"height":458}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between energy (in eV) and thickness (in nm) for thin and thick Cl layer depositions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Energy (eV) | Thin Cl layer deposition (nm) | Thick Cl layer deposition (nm) |\\n|-------------|--------------------------------|---------------------------------|\\n| 0 | 0.0 | 0.0 |\\n| 10 | 0.8 | 0.9 |\\n| 20 | 1.5 | 1.7 |\\n| 30 | 1.8 | 2.0 |\\n| 40 | 2.0 | 2.0 |\\n| 50 | 1.8 | 2.1 |\\n| 60 | 1.8 | 2.3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The damaged-layer thickness observed here is significantly higher than the corresponding EPC at 20 eV ion energy and comparable at 60 eV\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It can be concluded that, for both thin and thick Cl layer deposition cases, the damaged-layer thicknesses weakly and more-or-less linearly increase with the increasing incident ion energy in the energy range studied here. With an increasing ion incident energy, the penetration depths of Arþ ions and recoiled Cl atoms increase but so do the etch rates. In other words, a large part of the damaged-layer formed during the desorption step is etched away at high ion incident energy. It is\\nalso seen that the damaged-layer is slightly thicker in the thick Cl layer deposition case.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The damaged-layer thickness was averaged over the first six cycles (i.e., from C1 to C6)\\nunder each ALE condition\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_26_fig_9.jpg","caption":"FIG. 9. Numbers of desorbed species as functions of the $\\mathsf{Ar^{+}}$ ion dose during the desorption step of the 6th cycle (C6) of Si PA-ALE processes. The ALE conditions are the same as those in Table I. The vertical axis denotes the accumulated number of species desorbed from a unit area of the substrate surface during the desorption step of this cycle. The adsorption steps for (a) and (b) and (c) are the thin Cl layer deposition and those for (c) and (d) are the thick Cl layer deposition. The incident energy of $\\mathsf{Ar^{+}}$ ions is $20\\mathrm{eV}$ for (a) and (c) and $50\\mathrm{eV}$ for (b) and (d).","id":"train/atomic-layer-etching/simulation-usecase/26/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/26/fig_9","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/Surface damage formation during atomic layer etching of silicon with chlorine adsorption.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1345,"height":1070,"image_format":"jpeg","image_sha256":"8664e3e4cd1075704ed893e7c58909d0e8e5f89e47d5da61a5dffe634714df27","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":44,"width":632,"height":458},{"panel_id":"b","x":709,"y":44,"width":636,"height":459},{"panel_id":"c","x":10,"y":572,"width":632,"height":498},{"panel_id":"d","x":709,"y":572,"width":636,"height":498}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the number of species per cm² as a function of Ar⁺ ion dose for thin Cl layer deposition at 20 eV.\"},{\"panel_id\":\"b\",\"text\":\"The chart shows the number of species per cm² as a function of Ar⁺ ion dose for thin Cl layer deposition at 50 eV.\"},{\"panel_id\":\"c\",\"text\":\"The chart shows the number of species per cm² as a function of Ar⁺ ion dose for thick Cl layer deposition at 20 eV.\"},{\"panel_id\":\"d\",\"text\":\"The chart shows the number of species per cm² as a function of Ar⁺ ion dose for thick Cl layer deposition at 50 eV.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ar⁺ Ion Dose (×10¹⁶/cm²) | Si | Cl | SiCl | SiCl₂ | SiCl₃ |\\n|---------------------------|------|------|------|-------|-------|\\n| 0 | 0 | 0 | 0 | 0 | 0 |\\n| 5 | 1 | 2 | 3 | 0.5 | 0.2 |\\n| 10 | 2 | 3 | 4 | 0.8 | 0.3 |\\n| 15 | 3 | 4 | 4.5 | 1.0 | 0.4 |\\n| 18 | 3.5 | 4.5 | 5 | 1.2 | 0.5 |\"},{\"panel_id\":\"b\",\"text\":\"| Ar⁺ Ion Dose (×10¹⁶/cm²) | Si | Cl | SiCl | SiCl₂ | SiCl₃ |\\n|---------------------------|------|------|------|-------|-------|\\n| 0 | 0 | 0 | 0 | 0 | 0 |\\n| 5 | 10 | 1 | 2 | 0.5 | 0.2 |\\n| 10 | 20 | 1.5 | 2.5 | 0.8 | 0.3 |\\n| 15 | 30 | 2 | 3 | 1.0 | 0.4 |\\n| 18 | 35 | 2.2 | 3.2 | 1.2 | - |\"},{\"panel_id\":\"c\",\"text\":\"| Ar⁺ Ion Dose (×10¹⁶/cm²) | Si | Cl | SiCl | SiCl₂ | SiCl₃ |\\n|---------------------------|------|------|------|-------|-------|\\n| 0 | 0 | 0 | 0 | 0 | 0 |\\n| 5 | 0.5 | 25 | 3 | 1.0 | 0.5 |\\n| 10 | 1 | 28 | 4 | 1.5 | 0.8 |\\n| 15 | 1.2 | 30 | 4.5 | 1.8 | 1.0 |\\n| 18 | 1.5 | 32 | 5 | 2.0 | 1.2 |\"},{\"panel_id\":\"d\",\"text\":\"| Ar⁺ Ion Dose (×10¹⁶/cm²) | Si | Cl | SiCl | SiCl₂ | SiCl₃ |\\n|---------------------------|------|------|------|-------|-------|\\n| 0 | 0 | 0 | 0 | 0 | 0 |\\n| 5 | 10 | 20 | 3 | 1.0 | 0.5 |\\n| 10 | 20 | 25 | 4 | 1.5 | 0.8 |\\n| 15 | 30 | 28 | 4.5 | 1.8 | 1.0 |\\n| 18 | 35 | 30 | 5 | 2.0 | 1.2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"These images focus on the accumulated numbers of desorbed species in the desorption step of C6 as functions of the Ar+ ion dose under various conditions\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The accumulated numbers of desorbed monoatomic Si atoms and SiCl radicals, which are the next highest after monoatomic Cl, are almost the same initially. However, as the amount of Cl on the\\nsurface depletes, the rates of desorption for SiCl and SiCl2 decrease while monoatomic Si atoms continue to desorb. Furthermore, the desorption rate of monoatomic Si decreases as that of monoatomic Cl also decreases. It should be noted that the desorption of monoatomic Si does not mean the etching is purely due to physical sputtering. The physical sputtering yield of Si by 20 eV Ar+ ion bombardment is null essentially. The enhanced desorption of monoatomic Si atoms is likely caused by the bond breaking of Si atoms by Cl atoms remaining in the substrate\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. For thin Cl deposited films at high Ar+ ion, Si atoms mostly desorb as Cl bonded species in an\\nearly stage of the desorption step\\n2. For thick Cl deposited films, the desorption of SiClm is observed only in the very early stage of the Ar+ ion injection\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_27_fig_3.jpg","caption":"FIG. 3. (a) Contributions of Ga-O and Ga-N to the Ga3d peak area plotted as a function of sputter depth. The vertical dashed line indicates the spectra shown in (b). (b) The Ga3d signal after $20\\mathrm{s}$ of sputtering, highlighting the positions of the Ga-O and the Ga-N peaks at $20.5$ and $19.3\\mathrm{eV}$ , respectively.","id":"train/atomic-layer-etching/simulation-usecase/27/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/27/fig_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":666,"height":436,"image_format":"jpeg","image_sha256":"e403971f719da76da3c452f544fffb5c3598eadac368d3b38fd8f2a0ed0cb996","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":12,"width":346,"height":424},{"panel_id":"b","x":384,"y":12,"width":282,"height":424}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS depth profile showing the Ga-N and Ga-O contributions to the Ga3d peak area as a function of sputter depth. The Ga-O signal is highest at the surface and decreases with depth, indicating an oxidized surface layer extending approximately 10 nm into the film. The Ga-N signal increases with depth, reaching a maximum in the bulk region.\"},{\"panel_id\":\"b\",\"text\":\"Fitted Ga3d XPS spectrum after 20 s of sputtering, showing deconvolution into Ga-N (19.3 eV) and Ga-O (20.5 eV) components. At this depth, both bonding environments contribute to the signal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sputter depth (nm) | Ga-N Area (CPS eV) | Ga-O Area (CPS eV) |\\n|---|---|---|\\n| 0 | 2200 | 4100 |\\n| 1 | 3500 | 2800 |\\n| 3 | 4200 | 1900 |\\n| 5 | 4500 | 1500 |\\n| 10 | 4900 | 1000 |\\n| 20 | 5400 | 600 |\\n| 30 | 5800 | 100 |\\n| 35 | 5600 | 0 |\\n| 40 | 3500 | 0 |\\n| 45 | 100 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Envelope (Norm.) | Ga-N Component (Norm.) | Ga-O Component (Norm.) |\\n|---|---|---|---|\\n| 23.0 | 0.00 | 0.00 | 0.00 |\\n| 21.5 | 0.15 | 0.00 | 0.15 |\\n| 20.6 | 0.90 | 0.45 | 0.45 |\\n| 19.8 | 1.00 | 0.80 | 0.20 |\\n| 19.4 | 0.90 | 0.85 | 0.05 |\\n| 18.0 | 0.20 | 0.20 | 0.00 |\\n| 16.0 | 0.00 | 0.00 | 0.00 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It marks the sputter depth (after 20 s of sputtering) corresponding to the spectrum shown in subfigure (b).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The oxidized layer represents surface contamination that the ALE process aims to remove, and it affects the initial etch rate before reaching stoichiometric GaN.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Ga-O signal is highest at the surface (~4000 CPS·eV) and decreases rapidly within the first 10 nm, indicating a heavily oxidized surface layer. Beyond ~25 nm sputter depth, the Ga-O signal becomes negligible while Ga-N dominates, representing the transition to stoichiometric GaN in the bulk. This oxidized layer formed during storage in ambient conditions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ga-N is at 19.3 eV and Ga-O is at 20.5 eV.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_27_fig_4.jpg","caption":"FIG. 4. Gibbs free energy change $(\\Delta G)$ as a function of temperature for the fluorination half-cycle considering both the conversion (blue) and chemical vapor etching (red) reactions. Solid lines indicate plasma fluorination reactions (F radicals), while the thermal fluorination reactions (HF) are indicated by dashed lines. A vertical dashed line at $450^{\\circ}C$ highlights the change for the plasma fluorination reactions from the preferred conversion regime to the preferred etching regime. The ligand-exchange half-cycle is also included (dashed-dotted line, green) and shows a negative $\\Delta G$ over the entire evaluated temperature range.","id":"train/atomic-layer-etching/simulation-usecase/27/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/27/fig_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":655,"height":536,"image_format":"jpeg","image_sha256":"7d6b9f50ee937491497f376e2869e192b48ae880553407ddd7efe6e64fda2846","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":653,"height":532}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"DFT simulation results showing Gibbs free energy change (ΔG) vs. temperature for GaN ALE reactions. Plasma fluorination (F radicals, solid lines) shows both conversion and CVE reactions are thermodynamically favorable (ΔG < 0), with conversion preferred below 450°C. Thermal fluorination (HF, dashed lines) shows conversion is only favorable below ~250°C and CVE is unfavorable at all temperatures. The TMA ligand-exchange reaction (dash-dotted green) is favorable across the entire temperature range.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | F radical etching (eV/GaN) | F radical conversion (eV/GaN) | TMA Ligand-exchange (eV/GaN) | HF etching (eV/GaN) | HF conversion (eV/GaN) |\\n|---|---|---|---|---|---|\\n| -200 | -18.0 | -20.8 | -0.6 | 0.2 | -2.3 |\\n| 0 | -16.6 | -18.6 | -1.5 | 0.4 | -1.4 |\\n| 200 | -15.2 | -16.4 | -2.3 | 0.7 | -0.6 |\\n| 300 | -14.5 | -15.2 | -2.6 | 0.8 | -0.1 |\\n| 400 | -13.8 | -14.1 | -3.0 | 0.9 | 0.5 |\\n| 450 | -13.5 | -13.5 | -3.2 | 1.0 | 0.9 |\\n| 500 | -13.1 | -13.0 | -3.4 | 1.1 | 1.2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The DFT simulations show that F radical reactions have much more negative ΔG values than HF reactions, indicating stronger thermodynamic driving force. For HF, the conversion reaction becomes unfavorable above ~250°C and CVE is never favorable. In contrast, F radical conversion remains favorable up to 450°C with ΔG values around -15 to -20 eV/GaN, explaining why GaN is resistant to thermal fluorination but can be effectively fluorinated using plasma.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The process transitions from the preferred conversion regime to the preferred etching regime, making it unsuitable for self-limiting ALE.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The reaction is thermodynamically favorable and can proceed spontaneously.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The ligand-exchange reaction has negative ΔG across the entire evaluated temperature range, so it does not thermodynamically constrain the process window.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_13.jpg","caption":"FIG. 13. (Color online) Trends in the ALE synergy $(S_{y})$ as a function of pulse times for an AR of 4. (a) $S_{y}$ as a function of ion bombardment time $(T_{I})$ for three values of passivation time $(T_{P})$ . (b) $S_{y}$ as a function of $T_{I}$ and $T_{P}$ . The solid black line represents $\\mathrm{EPC} = 1$ and the dotted lines bound the range $0.9 < \\mathrm{EPC} < 1.1$ .","id":"train/atomic-layer-etching/simulation-usecase/3/fig_13","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_13","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"contour heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":575,"height":983,"image_format":"jpeg","image_sha256":"faeb14d46918ec4feedfa8aed401ba7941fa4bf630df57d3b36943717e0b7ef8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":433,"width":572,"height":549},{"panel_id":"a","x":3,"y":2,"width":568,"height":423}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the relationship between ALE synergy and ion bombardment time, showing a peak at around 0.5 seconds.\"},{\"panel_id\":\"b\",\"text\":\"The heatmap visualizes the ALE synergy across different passivation times and ion bombardment times, with color intensity indicating the level of synergy.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion Bombardment Time (Ti, s) | ALE Synergy (%) Tp = 44 ms | Tp = 66 ms | Tp = 88 ms |\\n|------------------------------|----------------------------|------------|------------|\\n| 0.00 | 90 | 85 | 82 |\\n| 0.25 | 93 | 91 | 86 |\\n| 0.50 | 92 | 89 | 87 |\\n| 0.75 | 89 | 87 | 86 |\\n| 1.00 | 87 | 86 | 85 |\\n| 1.25 | 85 | 84 | 82 |\\n| 1.50 | 84 | 83 | 81 |\"},{\"panel_id\":\"b\",\"text\":\"| Passivation Time (Tp, ms) | Ion Bombardment Time (Ti, s) | ALE Synergy (%) |\\n|---------------------------|------------------------------|------------------|\\n| 5 | 0.30 | ~75 |\\n| 25 | 0.30 | ~85 |\\n| 45 | 0.30 | ~90 |\\n| 64 | 0.30 | ~88 |\\n| 84 | 0.30 | ~85 |\\n| 104 | 0.30 | ~82 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For short TI (<0.15 s), a large fraction of the passivated Si which covers the surface of the feature is not removed during the ion bombardment step. The continuous etching produced by ions in the passivation phase then makes a significant contribution to the total rate of etching, which then lowers Sy.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For long TI (>1 s), the passivated Si covering the feature is completely removed and the now bare silicon is exposed to ion bombardment for an extended time. The continuous etching produced during the ion bombardment step by the presence of chlorine radicals and physical sputtering then accounts for a significant portion of the EPC, which then lowers Sy\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In general, to minimize nonidealities during ALE, the optimized process should use the shortest pulse times which result in ~1ML material removal per cycle for the largest AR feature being etched. These optimized process times will be given by the point closest to the origin on the solid line in image (b). These conditions also correspond to the smallest contribution of continuous chemical sputtering, and will result in the smoothest surface and widest processing window in terms of AR.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_31_figure_3.jpg","caption":"Figure 3. Electronic potential energies $(\\Delta E)$ and Gibbs free energies $(\\Delta G^{80^{\\circ}C})$ of nickel formate $\\left(\\mathrm{Ni}(\\mathrm{FA})_{2}\\right)$ and formamidinate (Ni $\\left(\\mathrm{FAmd}\\right)_2)$ oligomer (olig.) complexes relative to the monomer (mono.) complex. Energy differences are normalized by nuclearity (nucl.) for comparison on a per-metal atom basis.","id":"train/atomic-layer-etching/simulation-usecase/31/figure_3","sample_id":"atomic-layer-etching/simulation-usecase/31/figure_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/Thermodynamics of Atomic Layer Etching Chemistry on Copper and Nickel Surfaces from First Principles.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":613,"height":436,"image_format":"jpeg","image_sha256":"b5330113e43df77c12411a6862da4e08159ed6d37fe5295828f2e04eb21122c9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":7,"width":610,"height":425}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multiple line chart comparing electronic potential energies (ΔE) and Gibbs free energies (ΔG at 80 °C) per metal atom for nickel formate (FA) and formamidinate (FAmd) oligomers. The FA system shows its lowest ΔG at the dimer stage, while the FAmd system reaches its minimum ΔG at the trimer. These trends indicate ligand-dependent stabilization as oligomer size increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Oligomer State | ΔE_FA (eV) | ΔG_FA (80°C)(eV) | ΔE_FAmd(eV) | ΔG_FAmd (80°C)(eV) |\\n|----------------|-------------|------------------|--------------|------------------|\\n| Monomer | 0.0 | 0.0 | 0.0 | 0.0 |\\n| Dimer | ~ -1.0 | ~ -0.5 | ~ -1.50 | ~ -0.75 |\\n| Trimer | ~ -1.0 | ~ -0.4 | ~ -1.90 | ~ -1.25 |\\n| Tetramer| ~ -0.6 | ~ 0.00 | ~ -1.10 | ~ -0.25 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Trimer.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The FA complexes reach their lowest Gibbs free energy at the dimer stage, after which stability decreases for larger oligomers. In contrast, the FAmd complexes continue to stabilize beyond the dimer, reaching a minimum at the trimer before becoming less favorable at the tetramer. This indicates that ligand chemistry strongly influences the preferred oligomer size.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ligand systems that favor specific oligomer sizes may influence volatility, transport, or surface reactivity in vapor-phase processes. The observed preference for FA dimers and FAmd trimers suggests that ligand choice can tune aggregation behavior, which may be relevant when designing precursors for controlled deposition or etching.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_31_figure_4.jpg","caption":"Figure 4. Adsorption energies of different terminations of the $\\mathrm{Ni / N}$ , $\\mathrm{Cu / N}$ , $\\mathrm{Ni / O}$ , and $\\mathrm{Cu / O}$ systems as a function of coverage. The labels \"PR\" and \"MP\" represent the \"pairing row\" and \"missing row\" reconstructions of the (110) surfaces, respectively.","id":"train/atomic-layer-etching/simulation-usecase/31/figure_4","sample_id":"atomic-layer-etching/simulation-usecase/31/figure_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/Thermodynamics of Atomic Layer Etching Chemistry on Copper and Nickel Surfaces from First Principles.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1094,"height":861,"image_format":"jpeg","image_sha256":"6c62d2ff52c7e64e6adadda23dc0559fb2fbb69ed3f910694687769be5152b35","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":11,"y":0,"width":481,"height":365},{"panel_id":"b","x":580,"y":0,"width":482,"height":363},{"panel_id":"c","x":10,"y":415,"width":482,"height":361},{"panel_id":"d","x":581,"y":415,"width":481,"height":357}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multiple line chart showing Gibbs free energy of adsorption (ΔG_ads^80 °C) versus nitrogen coverage for the Ni/N system across several crystallographic facets. Adsorption becomes progressively less favorable with increasing coverage for all facets.\"},{\"panel_id\":\"b\",\"text\":\"Multiple line chart showing ΔG_ads^80 °C versus nitrogen coverage for the Cu/N system. Adsorption energies are consistently more positive than in Ni/N, indicating weaker nitrogen binding on Cu surfaces.\"},{\"panel_id\":\"c\",\"text\":\"Multiple line chart showing ΔG_ads^80 °C versus oxygen coverage for the Ni/O system, including labeled surface reconstructions such as (100) p(2×2), (110) (2×1)-MR, and (3×1)-MR. Oxygen adsorption is strongly favorable at low coverage and weakens with increasing coverage.\"},{\"panel_id\":\"d\",\"text\":\"Multiple line chart showing ΔG_ads^80 °C versus oxygen coverage for the Cu/O system, including pairing-row reconstructions. Adsorption becomes less favorable with increasing oxygen coverage and approaches thermoneutral behavior at high coverage.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Coverage θ_N (Å⁻²) | Blue Solid | Green Dash | Red Dash-Dot | Blue Dash | Purple Dash Dot | Yellow Solid |Teal Dash |\\n|---|---|---|---|---|---|---|---|\\n| 0.025 | ~ -0.6 | ~ +0.1 | ~ +0.3 | ~ 0.0 | ~ -0.25 | ~ +0.0 |~ +0.2 |\\n| 0.05 | ~ -0.4 | ~ +0.1 | ~ +0.3 | ~ +0.1 | ~ +0.00 | ~ +0.1 |~ +0.2 |\\n| 0.10 | ~ +0.25| ~ +0.4 | ~ +0.9 | ~ +0.4 | ~ +0.20 | ~ +0.5 |~ +0.5 |\\n| 0.15 | ~ +1.0 | ~ +1.1 | ~ +1.5 | - | ~ +0.90 | ~ +1.0 |~ +1.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Coverage θ_N (Å⁻²) | Blue Solid | Green Dash | Red Dash-Dot | Blue Dash | Purple Dash Dot | Yellow Solid |Teal Dash |\\n|---|---|---|---|---|---|---|---|\\n| 0.025 | ~ +0.8 | ~ +1.5 | ~ +1.7 | ~ +1.4 | ~ +1.00 | ~ +1.2 |~ +1.2 | \\n| 0.05 | ~ +0.8 | ~ +1.5 | ~ +1.6 | ~ +1.5 | ~ +1.00 | ~ +1.2 |~ +1.2 |\\n| 0.10 | ~ +1.5 | ~ +1.8 | ~ +2.1 | - | - | ~ +1.8 |~ +1.5 |\\n| 0.125 | ~ +1.8 | ~ +0.0 | ~ +2.9 | - | - | ~ +2.1 |~ +2.3 |\"},{\"panel_id\":\"c\",\"text\":\"| Coverage θ_O (Å⁻²) | Blue Solid | Green Dash | Red Dash-Dot | Blue Dash | Purple Dash Dot | Yellow Solid |Teal Dash |\\n|---|---|---|---|---|---|---|---|\\n| 0.05 | ~ -2.1 | ~ -1.8 | ~ -1.9 | ~ -1.9 | ~ -2.1 | ~ -2.0 |~ -2.0 |\\n| 0.10 | ~ -1.6 | ~ -1.5 | ~ -1.5 | ~ -1.6 | ~ -1.75 | ~ -1.6 |~ -1.5 |\\n| 0.15 | ~ -1.25| ~ -1.3 | ~ -0.9 | ~ -1.4 | ~ -1.25 | ~ -1.2 |~ -1.3 |\\n| 0.20 | - | - | ~ -0.5 | ~ -1.0 | ~ -1.00 | ~ -0.9 |~ -1.0 |\"},{\"panel_id\":\"d\",\"text\":\"| Coverage θ_O (Å⁻²) | Blue Solid | Green Dash | Red Dash-Dot | Blue Dash | Purple Dash Dot | Yellow Solid |Teal Dash |\\n|---|---|---|---|---|---|---|---| \\n| 0.05 | ~ -1.6 | ~ -1.4 | ~ -1.3 | ~ -1.4 | ~ -1.60 | ~ -1.4 |~ -1.5 | \\n| 0.10 | ~ -1.3 | ~ -1.2 | ~ -0.75 | ~ -1.2 | ~ -1.20 | ~ -1.0 |~ -1.2 |\\n| 0.15 | ~ -0.3 | ~ -0.6 | ~ -0.00 | ~ -0.9 | ~ -0.90 | ~ -0.6 |~ -0.9 |\\n| 0.20 | - | - | - | ~ -0.4 | ~ -0.50 | - |~ 0.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"80 °C (indicated by the superscript in ΔG_ads^80 °C).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the energy generally increases (becomes more positive/less stable) as coverage increases.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Subfigure (c) explicitly labels several surface reconstructions for the Ni/O system. For the (100) facet, it identifies $p(2 \\\\times 2)$ and $c(2 \\\\times 2)$ structures, while for the (110) facet, it highlights $(2 \\\\times 1)-MR$ and $(3 \\\\times 1)-MR$ \\\"missing row\\\" reconstructions. At the lowest coverage shown, the $(110) (2 \\\\times 1)-MR$ reconstruction (marked with a green cross) appears to be the most stable, having the lowest $\\\\Delta G$ value below -2.0 eV.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Ni/N system (a).\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_4f80ad6bb517a6a7dc64ff0faf1cdcbf0b92399b65f69269988d6c0387e6b73f.jpg","caption":"(a)","id":"train/atomic-layer-etching/simulation-usecase/33/4f80ad6bb517a6a7dc64ff0faf1cdcbf0b92399b65f69269988d6c0387e6b73f","sample_id":"atomic-layer-etching/simulation-usecase/33/4f80ad6bb517a6a7dc64ff0faf1cdcbf0b92399b65f69269988d6c0387e6b73f","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/4f80ad6bb517a6a7dc64ff0faf1cdcbf0b92399b65f69269988d6c0387e6b73f.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/4f80ad6bb517a6a7dc64ff0faf1cdcbf0b92399b65f69269988d6c0387e6b73f.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":414,"height":200,"image_format":"jpeg","image_sha256":"8ecadbbd44329ab71781a6f76519f32aa67b97ccff9800953807cbf2b665c3bb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":414,"height":200}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart compares the total energy per atom over time between two computational methods: Density Functional Theory (DFT) and a Neural Network Potential (NNP). The x-axis represents time in picoseconds (ps), while the y-axis shows energy in electron volts per atom (eV/atom). Both methods exhibit similar dynamic energy profiles with overlapping fluctuations, suggesting that the NNP method reliably captures the same energy behavior as the more computationally expensive DFT. This highlights NNP’s potential for efficient and accurate simulations in extended time or larger systems.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (ps) | DFT (eV/atom) | NNP (eV/atom) |\\n|-----------|---------------|---------------|\\n| 0 | -7.20 | -7.22 |\\n| 10 | -7.05 | -7.07 |\\n| 20 | -6.95 | -6.98 |\\n| 30 | -7.10 | -7.13 |\\n| 40 | -6.90 | -6.92 |\\n| 50 | -7.00 | -7.03 |\\n| 60 | -6.85 | -6.88 |\\n| 70 | -6.95 | -6.97 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The NNP model closely mirrors the energy profile predicted by DFT over the full simulation time, maintaining similar fluctuation amplitudes and trends. While minor deviations are visible at certain time points, the overall agreement between the two methods supports the accuracy of the NNP in reproducing DFT-level energy predictions, making it suitable for large-scale simulations.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"DFT\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Reduced computational cost, Faster simulation times, Comparable accuracy for energy predictions, Scalability to larger systems or longer timescales\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_figure_6.jpg","caption":"(a) Figure 6. (a) The number of Si, N, H, and F atoms in the simulation cell during the etching process at $E_{\\mathrm{in}} = 50 \\mathrm{eV}$ and $\\theta_{\\mathrm{in}} = 0^{\\circ}$ . (b) Etching yield as a function of incident energy. The black dashed line represents the fitted function of the universal etching behavior.[52] The error bars indicate the standard deviations among three independent runs.","id":"train/atomic-layer-etching/simulation-usecase/33/figure_6","sample_id":"atomic-layer-etching/simulation-usecase/33/figure_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":281,"height":264,"image_format":"jpeg","image_sha256":"9c3fcdadec4a42bd6cdfdb4139b4146fbdc63a77a9798a8e6deedefc650ba84a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":281,"height":264}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents the number of Si, N, H, and F atoms in a system as a function of HF dose. As HF exposure increases from 0 to 200 HF/nm², both silicon (Si) and nitrogen (N) atoms show a steady decline, indicating progressive etching or transformation. Fluorine (F) atoms increase significantly at lower doses and then level off, suggesting that surface fluorination saturates over time. Hydrogen (H) levels remain relatively constant, suggesting limited involvement or a dynamic equilibrium. Together, these trends reveal the elemental evolution occurring during HF exposure and suggest that nitrogen and silicon are preferentially removed or transformed while fluorine accumulates on the surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Dose (HF/nm²) | Si | N | H | F |\\n|---------------|----|----|----|----|\\n| 0 | 400 | 500 | 100 | 0 |\\n| 50 | 370 | 460 | 110 | 120 |\\n| 100 | 340 | 420 | 110 | 140 |\\n| 150 | 310 | 390 | 110 | 150 |\\n| 200 | 280 | 360 | 110 | 150 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the HF dose increases, the number of nitrogen and silicon atoms steadily decreases, indicating progressive material removal or chemical transformation. In contrast, the number of fluorine atoms increases sharply at lower doses and then plateaus, suggesting surface saturation or limited incorporation beyond a certain dose. The hydrogen atom count remains nearly constant, implying either low reactivity or steady-state behaviour. These trends highlight the distinct chemical roles each element plays during HF exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Fluorine (F)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Si and N are progressively removed ,Fluorine accumulates , Hydrogen remains constant\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_4_figure_2.jpg","caption":"Figure 2. Etch per cycle of TiN films with varying $\\mathbb{C}\\mathbb{C}\\mathbb{I}_4$ pulse time at $460^{\\circ}C$ 6 s long $\\mathbb{N}_2$ purges were used. The figure compares the EPC for the binary process (red) to the CVE process (blue).","id":"train/atomic-layer-etching/simulation-usecase/4/figure_2","sample_id":"atomic-layer-etching/simulation-usecase/4/figure_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/Combining Experimental and DFT Investigation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":633,"height":598,"image_format":"jpeg","image_sha256":"c2a162c89584ecf10b088bb8ad3343b7d5a39c552229ba0526dc010bddeda724","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":4,"width":624,"height":595}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 2 illustrates the etch per cycle (EPC) of TiN films as a function of CCl₄ pulse time at 460 °C, comparing two etching processes: the NbF₅–CCl₄ binary process and the CCl₄-only CVE process. The EPC increases with CCl₄ pulse time for both processes, with the binary process showing higher etch rates (up to ~0.8 Å at 3 s) compared to the CVE process (~0.5 Å at 3 s). No clear saturation of EPC is observed for either process, and no etching occurs when only NbF₅ is applied, consistent with computational predictions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| CCl₄ pulse time [s] | Etch per cycle NbF₅–CCl₄ [Å] | Etch per cycle CCl₄-only CVE [Å] |\\n|---|---|---|\\n| 0.0 | 0.0 | 0.0 |\\n| 0.5 | 0.3 | 0.3 |\\n| 1.0 | 0.4 | 0.4 |\\n| 3.0 | 0.8 | 0.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For both processes, the etch per cycle increases with increasing CCl₄ pulse time. The NbF₅–CCl₄ binary process consistently shows higher EPC values than the CCl₄-only CVE process. At 3 s pulse time, the EPC reaches approximately 0.8 Å for the binary process and 0.5 Å for the CVE process. No clear saturation is observed, indicating a nearly linear increase across the measured pulse times.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Enhanced reactivity of CCl₄ with fluorinated TiN surfaces, Formation of more volatile etch products such as TiCl₄ instead of less volatile species (TiCl₃, TiOCl, TiF₃), Possible three-dimensional etching due to fluorine diffusion through TiN grain boundaries, Self-limiting reactions of NbF₅ pulses followed by catalyzed CCl₄ adsorption at Nb sites\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 0.5 Å.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_4_figure_3.jpg","caption":"Figure 3. Effect of etch temperature on etch per cycle for the binary process (blue curve) as well as $\\mathrm{CCl_4}$ alone (blue curve) process. Both the precursor pulses and the purge times were fixed to 1 and 6 s, respectively.","id":"train/atomic-layer-etching/simulation-usecase/4/figure_3","sample_id":"atomic-layer-etching/simulation-usecase/4/figure_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/Combining Experimental and DFT Investigation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":642,"height":595,"image_format":"jpeg","image_sha256":"c59b09f92224112076fab01d65532c1691bf4a04c3d7e988beec6c61ba4d045c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":4,"width":633,"height":589}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 3 shows the effect of etch temperature on the etch per cycle of TiN films for the NbF₅–CCl₄ binary process and the CCl₄-only process. The etch per cycle increases with temperature for both processes, with the binary process consistently exhibiting higher etch rates. No significant etching occurs below 370 °C, and the trend is approximately linear up to 460 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Etch temperature [°C] | Etch per cycle NbF₅–CCl₄ [Å] | Etch per cycle CCl₄-only [Å] |\\n|---|---|---|\\n| 370 | 0.03 | 0.07 |\\n| 380 | 0.10 | 0.12 |\\n| 390 | 0.20 | 0.18 |\\n| 400 | 0.40 | 0.22 |\\n| 460 | 0.55 | 0.30 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch per cycle increases with temperature for both processes. The NbF₅–CCl₄ binary process consistently shows higher EPC values than the CCl₄-only process. At 370 °C, the EPC is 0.03 Å for the binary process and 0.07 Å for CCl₄-only. By 460 °C, the EPC rises to 0.55 Å for the binary process and 0.3 Å for the CCl₄-only process, demonstrating a nearly linear increase with temperature.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Enhanced reactivity of CCl₄ with fluorinated TiN surface, Formation of more volatile etch products such as TiCl₄ instead of less volatile species, Self-limiting reactions of NbF₅ followed by catalyzed CCl₄ adsorption, Higher activation of surface reactions at elevated temperatures\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 0.4 Å.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_4_figure_4.jpg","caption":"Figure 4. A change in the thickness values with total number of etch cycles at $460^{\\circ}\\mathrm{C}$ for TiN, $\\mathrm{SiO_2}$ , $\\mathrm{Al}_2\\mathrm{O}_3$ , and $\\mathrm{Si}_3\\mathrm{N}_4$ films. A TiN is selectively etched away by $\\mathrm{CCl_4}$ alone over other materials.","id":"train/atomic-layer-etching/simulation-usecase/4/figure_4","sample_id":"atomic-layer-etching/simulation-usecase/4/figure_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/Combining Experimental and DFT Investigation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":625,"height":575,"image_format":"jpeg","image_sha256":"3d50cc1867ca8e1cf4c6b42bf228f7c2de0551989d53b1b0b5a1a2774495f158","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":618,"height":567}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 4 shows the change in film thickness with the total number of etch cycles at 460 °C for TiN, SiO₂, Al₂O₃, and Si₃N₄ films. The TiN film is selectively etched by the CCl₄-only CVE process, with thickness decreasing linearly at approximately 0.3 Å per cycle, reaching about 13 nm after 500 cycles. In contrast, the thickness of Al₂O₃, SiO₂, and Si₃N₄ remains unchanged even after 1000 etch cycles, demonstrating the high selectivity of TiN etching over other materials.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Etch cycles | TiN (ALD) | Al₂O₃ (ALD) | SiO₂ (TOx) | Si₃N₄ (LPCVD) |\\n|---|---|---|---|---|\\n| 0 | 0 | 0 | 0 | 0 |\\n| 100 | 3 | 0 | 0 | 0 |\\n| 300 | 9 | 0 | 0 | 0 |\\n| 500 | 13 | 0 | 0 | 0 |\\n| 1000 | 30 | 0 | 0 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"no\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TiN film thickness decreases linearly with the number of etch cycles, reflecting an etch rate of approximately 0.3 Å per cycle. In contrast, the thicknesses of Al₂O₃, SiO₂, and Si₃N₄ remain essentially unchanged even after 1000 cycles. This demonstrates the high selectivity of TiN etching over the other materials under the same process conditions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Enables precise patterning and removal of TiN without damaging other substrate materials, Maintains integrity of dielectric layers (Al₂O₃, SiO₂) and nitride layers (Si₃N₄), Reduces the risk of contamination or undesired etching in multi-layer devices, Facilitates reliable manufacturing in microelectronics and nanofabrication processes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 13 nm.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_4_figure_7.jpg","caption":"Figure 7. An XPS depth profiling through remaining TiN film after partial etching at $460^{\\circ} \\text{C}$ . Total 300 cycles were performed with $0.5 \\text{s}$ of both $\\text{NbF}_5$ and $\\text{CCl}_4$ pulse lengths with $6 \\text{s}$ of $\\text{N}_2$ purges.","id":"train/atomic-layer-etching/simulation-usecase/4/figure_7","sample_id":"atomic-layer-etching/simulation-usecase/4/figure_7","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/Combining Experimental and DFT Investigation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":600,"height":550,"image_format":"jpeg","image_sha256":"f874063fa37bbbf369670d108326bc4a8f3437bbfa1fbba410a2c2d73006a500","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":595,"height":544}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 7 presents an XPS depth profile of a partially etched TiN film after 300 cycles of the NbF₅–CCl₄ etch process at 460 °C, with 0.5 s pulses and 6 s N₂ purges. The surface initially contains high carbon (~26%) and oxygen (~31%), along with nitrogen (~20%), titanium (~15%), niobium (~5%), and small amounts of fluorine and silicon (<2%). After 15 s of argon sputtering, carbon decreases to ~4% and further to ~3% after 60 s, while Ti, N, and O stabilize at ~24–32%. Nb and F remain at 5–6% and 0.9–1.7%, respectively, indicating partial incorporation or diffusion within the TiN surface layer. Si originates from the underlying SiO₂. The profile confirms the elemental distribution and partial etch depth of the TiN film.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sputter time [s] | C1s (%) | N1s (%) | O1s (%) | F1s (%) | Si2p (%) | Ti2p (%) | Nb3d (%) |\\n|---|---|---|---|---|---|---|---|\\n| 0 | 26 | 20 | 31 | 1.5 | 1.5 | 15 | 5 |\\n| 15 | 4 | 32 | 28 | 1.0 | 1.5 | 24 | 5.5 |\\n| 60 | 3 | 32 | 28 | 0.9 | 1.5 | 24 | 6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Initially, the surface contains a high carbon concentration (~26%) and lower Ti (~15%) and N (~20%). After 15 s of argon sputtering, carbon decreases sharply to ~4%, while Ti, N, and O increase slightly and stabilize at ~24–32%. After 60 s of sputtering, carbon drops further to ~3%, and Ti, N, and O remain stable, reflecting the bulk composition of the remaining TiN film. This trend shows that surface contamination diminishes with depth while the elemental composition of the film core is revealed.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Determines the elemental distribution within the remaining TiN film, Reveals surface contamination and its removal with sputtering, Confirms partial incorporation of Nb and F into the TiN surface layer, Helps assess the effectiveness and uniformity of the etch process, Provides information about possible diffusion or adsorption mechanisms during etching\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 24%.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_5_fig_5.jpg","caption":"Fig. 5 (a) Density profile of Ge and Cl element change before and after 200 times Ar bombardment with different bombardment energy on $25\\mathrm{eV}$ chlorinated surface. (b) Total etched number change (blue: Ge, red: Cl) with Ar bombardment energy for each chlorination condition, averaged from three samples with error bars calculated.","id":"train/atomic-layer-etching/simulation-usecase/5/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/5/fig_5","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"},{"panel_id":"e","label":"multiple line chart"},{"panel_id":"f","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/Computational modelling of atomic layer etching of chlorinated germanium surfaces by argon.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":608,"height":694,"image_format":"jpeg","image_sha256":"55f34b8678815727fcc8ceb6ad2cefba4257aca61f956a9d8acba3d06b1cb07c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":301,"height":230},{"panel_id":"b","x":307,"y":5,"width":301,"height":232},{"panel_id":"c","x":1,"y":238,"width":300,"height":229},{"panel_id":"d","x":311,"y":233,"width":294,"height":226},{"panel_id":"e","x":4,"y":473,"width":308,"height":220},{"panel_id":"f","x":315,"y":471,"width":288,"height":220}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the number density of Ge and Cl atoms at different z distances for initial and final states on 25 eV chlorinated surface.\"},{\"panel_id\":\"b\",\"text\":\"The line chart shows the number density of Ge and Cl atoms at different z distances for initial and final states on 50 eV chlorinated surface.\"},{\"panel_id\":\"c\",\"text\":\"The line chart shows the number density of Ge and Cl atoms at different z distances for initial and final states on 75 eV chlorinated surface.\"},{\"panel_id\":\"d\",\"text\":\"The line chart shows the number density of Ge and Cl atoms at different z distances for initial and final states on 100 eV chlorinated surface.\"},{\"panel_id\":\"e\",\"text\":\"The line chart illustrates the total etched numbers of Ge atoms at different Ar energies.\"},{\"panel_id\":\"f\",\"text\":\"The line chart illustrates the total etched numbers of Cl atoms at different Ar energies.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| z distance (Å) | Density Ge_initial | Density Cl_initial | Density Ge_final | Density Cl_final |\\n|---|---|---|---|---|\\n| 0 | 0 | 0 | 0 | 0 |\\n| 50 | 75 | 75 | 65 | 50 |\"},{\"panel_id\":\"b\",\"text\":\"| z distance (Å) | Density Ge_initial | Density Cl_initial | Density Ge_final | Density Cl_final |\\n|---|---|---|---|---|\\n| 0 | 0 | 0 | 0 | 0 |\\n| 50 | 75 | 75 | 50 | 25 |\"},{\"panel_id\":\"c\",\"text\":\"| z distance (Å) | Density Ge_initial | Density Cl_initial | Density Ge_final | Density Cl_final |\\n|---|---|---|---|---|\\n| 0 | 0 | 0 | 0 | 0 |\\n| 50 | 75 | 75 | 40 | 10 |\"},{\"panel_id\":\"d\",\"text\":\"| z distance (Å) | Density Ge_initial | Density Cl_initial | Density Ge_final | Density Cl_final |\\n|---|---|---|---|---|\\n| 0 | 0 | 0 | 0 | 0 |\\n| 50 | 75 | 75 | 15 | 5 |\"},{\"panel_id\":\"e\",\"text\":\"| Ar energy (eV) | Ge_5eV | Ge_10eV | Ge_25eV | Ge_50eV |\\n|---|---|---|---|---|\\n| 25 | 100 | 150 | 250 | 400 |\\n| 50 | 150 | 250 | 350 | 550 |\\n| 75 | 500 | 500 | 600 | 700 |\\n| 100 | 550 | 600 | 700 | 800 |\"},{\"panel_id\":\"f\",\"text\":\"| Ar energy (eV) | Ge_5eV | Ge_10eV | Ge_25eV | Ge_50eV |\\n|---|---|---|---|---|\\n| 25 | 50 | 100 | 200 | 300 |\\n| 50 | 100 | 200 | 250 | 400 |\\n| 75 | 250 | 250 | 400 | 500 |\\n| 100 | 250 | 300 | 450 | 600 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The threshold energy decreases as the chlorination energy increases.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 5 demonstrates that both the chlorination energy and the Ar bombardment energy have a strong and interrelated influence on the onset and efficiency of etching. As the chlorination energy increases, the surface becomes more disordered and vulnerable to atom detachment, which lowers the threshold Ar energy required to initiate etching. At the same time, higher bombardment energies lead to increased etching of both Ge and Cl atoms, indicating higher etching rates. However, for lower chlorination energies, the etched atom numbers tend to reach a plateau as the available chlorine becomes limited, reflecting a self-limiting chemical etching process. In contrast, higher chlorination energies delay this plateau because more chlorine is initially present, allowing etching to continue over a larger range of bombardment energies before transitioning into physical sputtering.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Cl density peak starts to decrease and the Ge surface begins to recede already at an Ar bombardment energy of 25 eV, with the etching effect becoming more obvious at 50 eV.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Complete etching occurs between 60–75 eV for the 5 eV chlorinated surface, 75-100 eV for the 10 and 25 eV chlorinated surfaces, and above 100 eV for the 50 eV chlorinated surface.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig2.jpg","caption":"FIG.2. $\\mathbb{C}\\mathbb{I}_2$ mass flow, pressure, and DC bias during one 7 s ALE cycle. The applied DC bias is $-65\\mathrm{V}$ for this case. The Ar flow (80 SCCM) is on continuously throughout the cycle. ICP power is 250 W.","id":"train/atomic-layer-etching/simulation-usecase/6/fig2","sample_id":"atomic-layer-etching/simulation-usecase/6/fig2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":678,"height":475,"image_format":"jpeg","image_sha256":"0d4aa542f6fdebdad861e3355b99790a7e5c932dce2847f8daeface47db3a613","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":678,"height":475}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multi-axis chart shows the evolution of DC self-bias voltage, chlorine gas flow, and chamber pressure over time. The process is divided into four clearly marked steps, each showing how plasma conditions and gas flow influence system parameters. The other panels are not separate figures but sub-intervals within (a). Their summaries have been removed to avoid redundancy and reflect the unified timeline.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | DC Self-Bias (V) | Cl₂ Flow (seccm) | P (mTorr) |\\n|----------|------------------|------------------|-----------|\\n| 0 | 0 | 0 | 22 |\\n| 1 | 0 | 20 | 22 |\\n| 2 | -60 | 20 | 21 |\\n| 3 | -60 | 0 | 20 |\\n| 4 | -60 | 0 | 20 |\\n| 5 | 0 | 20 | 21 |\\n| 6 | 0 | 0 | 22 |\\n| 7 | 0 | 0 | 22 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Step 1: Cl₂ On, ICP Off, Bias Off; Step 2: ICP On, Bias On; Step 3: Cl₂ Off, Bias Off; Step 4: All Off\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Pressure decreases slightly with ICP on, then returns to baseline; Cl₂ flow toggles between 20 seccm and 0 based on step.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"DC Self-Bias (V), Cl₂ Flow (seccm), Pressure (mTorr)\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_8_fig_4.jpg","caption":"FIG. 4. Gibbs free energy change $(\\Delta \\mathbb{G})$ as a function of temperature for the fluorination half-cycle considering both the conversion (blue) and chemical vapor etching (red) reactions. Solid lines indicate plasma fluorination reactions (F radicals), while the thermal fluorination reactions (HF) are indicated by dashed lines. A vertical dashed line at $450^{\\circ}C$ highlights the change for the plasma fluorination reactions from the preferred conversion regime to the preferred etching regime. The ligand-exchange half-cycle is also included (dashed-dotted line, green) and shows a negative $\\Delta \\mathbb{G}$ over the entire evaluated temperature range.","id":"train/atomic-layer-etching/simulation-usecase/8/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/8/fig_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/Isotropic atomic layer etching of GaN using SF6 plasma and AI(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":655,"height":536,"image_format":"jpeg","image_sha256":"7d6b9f50ee937491497f376e2869e192b48ae880553407ddd7efe6e64fda2846","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":3,"width":650,"height":532}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart illustrates the change in Gibbs free energy (ΔG) per unit GaN with respect to temperature for various etching methods.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | ΔG (eV/GaN) HF CVE |ΔG (eV/GaN) HF conversion |ΔG (eV/GaN) TMA ligand-exchange |ΔG (eV/GaN) F radical CVE |ΔG (eV/GaN) F radical conversion |\\n|---|---|---|---|---|---|\\n|-200 | 0 |-3|-0.5|-18.5|-21|\\n|-100 | 0 |-2|-1|-18|-20|\\n|0 | 0.5 |-2|-1.5|-16|-19|\\n|100 | 1 |-1|-2|-16|-18|\\n|200 | 1 |0|-2.5|-15|-17|\\n|300 | 1|0|-3|-14|-16|\\n|400 | 1.5 |1|-3.5|-14|-14|\\n|500 | 1.5 |1.5|-4|-14.5|-13|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The use of F radicals in a plasma as this lowers the gibbs energy the most.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"F radical conversion, as this has lower delta gibbs energies. Only from 450 degrees celcius and up will there be etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The chance decreases.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"+1 eV/GaN\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_9_fig_7.jpg","caption":"Fig. 7. Schematic of the energy conversion process and snapshots of the density distribution with time evolution, the distributions on excited-state and ground-state potential energy curves are represented by solid and dashed lines, respectively. The vertical line $Z = Z_{d}$ is the defined critical value, the $\\mathrm{SiCl_2}$ molecule crossing this line can be identified as to be completely desorbed. Since the distribution for $Z > Z_{d}$ is small, it was multiplied by a factor of $4\\times 10^{5}$ if $Z > Z_{d}$ to make it visible.","id":"train/atomic-layer-etching/simulation-usecase/9/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/9/fig_7","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/Mechanism of photoassisted atomic layer etching of chlorinated Si(111) surfaces Insight.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":666,"height":470,"image_format":"jpeg","image_sha256":"3588df2fe5c35bd9f911f66bc1602725f1a2716519139c855aec31c9fbf7a99f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":665,"height":465}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates the potential energy of a system as a function of surface coordinate Z at various time points (t=0 fs, t=5 fs, t=10 fs, t=400 fs). It shows the transition between the ground state and excited state, with terms like 'Excitation', 'Quenching', and 'Evolving' indicating the dynamics of the system.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Surface coordinate Z (Å) | Potential energy (eV) Ground state | Potential energy (eV) Excited state | Density Ground state |Density Excited state |\\n|---|---|---|---|---|\\n|-0.7 | 3 |4.2|-|-|\\n| 0 | 0 |3.1|Peak|Peak|\\n| 1 | 1.6 |2.6|-|-|\\n| 2 | 2.4 |2.5|-|-|\\n| 3 | 2.5 |2.5|-|-|\\n| 4 | 2.5 |2.5|-|-|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The critical distance is 3 angstroms, this is the distance from which a SiCl2 unit is defined to be fully desorbed.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Quenching is the transition from the excited state to the ground state by energy dissipation in the system, so from the red line to the blue line.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The excited state is induced by the absorption of photons with the correct energy. The amount of excited species reduces over time in the system, explaining the trend in the densities for the excited state and the ground state.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The desorption energy is 2.5 eV\"}]}]"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_16_fig_2.jpg","caption":"FiG. 2. (a) Thermogravimetric analysis and (b) vapor pressures of the $\\mathrm{Zr}$ precursors.","id":"train/atomic-layer-deposition/experimental-usecase/16/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/16/fig_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the thermogravimetric analysis curves (weight loss percentage as a function of temperature) for the Zr precursors. Zr(Cp)(ᵗBuDAD)(OⁱPr) evaporates with minimal residue, two other precursors show decomposition.\"},{\"panel_id\":\"b\",\"text\":\"The chart illustrates the vapor pressure of Zr complexes (Zr(Cp)(ᵗBuDAD)(OⁱPr),Zr(MeCp)(TMEA), Zr(Me₅Cp)(TEA)) at different temperatures. Zr(Cp)(ᵗBuDAD)(OⁱPr) achieves highest vapor pressures at low temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Weight loss (%) | Reagent + Conditions |\\n|---|---|---|\\n| 6 | 100.8 | Zr(Me_5Cp)(TEA) (vac) |\\n| 98 | 100.8 | Zr(Me_5Cp)(TEA) (vac) |\\n| 189 | 82.9 | Zr(Me_5Cp)(TEA) (vac) |\\n| 231 | 15.3 | Zr(Me_5Cp)(TEA) (vac) |\\n| 299 | 13.0 | Zr(Me_5Cp)(TEA) (vac) |\\n| 406 | 7.6 | Zr(Me_5Cp)(TEA) (vac) |\\n| 498 | 6.8 | Zr(Me_5Cp)(TEA) (vac) |\\n| 6 | 100.8 | Zr(Me_5Cp)(TEA) (atm) |\\n| 98 | 100.8 | Zr(Me_5Cp)(TEA) (atm) |\\n| 205 | 92.6 | Zr(Me_5Cp)(TEA) (atm) |\\n| 270 | 68.9 | Zr(Me_5Cp)(TEA) (atm) |\\n| 347 | 63.1 | Zr(Me_5Cp)(TEA) (atm) |\\n| 423 | 34.8 | Zr(Me_5Cp)(TEA) (atm) |\\n| 497 | 29.3 | Zr(Me_5Cp)(TEA) (atm) |\\n| 6 | 100.8 | Zr(MeCp)(TMEA) (atm) |\\n| 98 | 100.8 | Zr(MeCp)(TMEA) (atm) |\\n| 202 | 98.4 | Zr(MeCp)(TMEA) (atm) |\\n| 285 | 68.5 | Zr(MeCp)(TMEA) (atm) |\\n| 317 | 14.6 | Zr(MeCp)(TMEA) (atm) |\\n| 418 | 11.8 | Zr(MeCp)(TMEA) (atm) |\\n| 498 | 11.5 | Zr(MeCp)(TMEA) (atm) |\\n| 6 | 100.8 | Zr(Cp)(tBuDAD)(O^iPr) (atm) |\\n| 98 | 100.8 | Zr(Cp)(tBuDAD)(O^iPr) (atm) |\\n| 183 | 94.6 | Zr(Cp)(tBuDAD)(O^iPr) (atm) |\\n| 234 | 56.5 | Zr(Cp)(tBuDAD)(O^iPr) (atm) |\\n| 263 | 2.9 | Zr(Cp)(tBuDAD)(O^iPr) (atm) |\\n| 409 | 2.1 | Zr(Cp)(tBuDAD)(O^iPr) (atm) |\\n| 498 | 1.4 | Zr(Cp)(tBuDAD)(O^iPr) (atm) |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | Vapor pressure (Torr) | Reagent |\\n|---|---|---|\\n| 100 | 0.6 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 109 | 0.8 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 119 | 1.2 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 129 | 1.5 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 139 | 2.0 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 128 | 0.2 | Zr(Me_5Cp)(TEA) |\\n| 138 | 0.3 | Zr(Me_5Cp)(TEA) |\\n| 149 | 0.5 | Zr(Me_5Cp)(TEA) |\\n| 159 | 0.7 | Zr(Me_5Cp)(TEA) |\\n| 168 | 0.7 | Zr(Me_5Cp)(TEA) |\\n| 178 | 0.8 | Zr(Me_5Cp)(TEA) |\\n| 188 | 1.4 | Zr(Me_5Cp)(TEA) |\\n| 127 | 0.2 | Zr(MeCp)(TMEA) |\\n| 137 | 0.2 | Zr(MeCp)(TMEA) |\\n| 147 | 0.3 | Zr(MeCp)(TMEA) |\\n| 157 | 0.5 | Zr(MeCp)(TMEA) |\\n| 167 | 0.7 | Zr(MeCp)(TMEA) |\\n| 178 | 1.6 | Zr(MeCp)(TMEA) |\\n| 188 | 2.5 | Zr(MeCp)(TMEA) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Zr(Cp)(ᵗBuDAD)(OⁱPr)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Applying vacuum conditions significantly reduces decomposition compared to atmospheric pressure. The thermogravimetric analysis shows a residue of ~30% at the highest temperature studied. Under vacuum, the residue is ~ 6%. The reduction in residue is a sign of reduced thermal decomposition.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Zr(Me₅Cp)(TEA) under vacuum.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Zr(Cp)(ᵗBuDAD)(OⁱPr) achieves highest vapor pressures at lower temperatures.\"}]}]","bbox":[{"panel_id":"a","x":40,"y":6,"width":611,"height":516},{"panel_id":"b","x":52,"y":550,"width":595,"height":489}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/Sanni Seppala et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":653,"height":1042,"image_format":"jpeg","image_sha256":"725b05417e27a28556e0e2bbb46cdd81a89ffaaf32e574799917f65d3251a011","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_16_fig_3.jpg","caption":"FiG. 3. (a) Film growth rates at different temperatures with (a) water and (b) ozone as the oxygen source. Pulse times for $\\mathrm{Zr}$ precursors, $\\mathrm{H}_2\\mathrm{O}$ and $\\mathrm{O_3}$ were $1.0\\mathrm{s}$ and purge times for all pulses $1.5\\mathrm{s}$","id":"train/atomic-layer-deposition/experimental-usecase/16/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/16/fig_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the growth rates against temperatures for Zr precursors when using water as the oxygen source. The growth rate of films with Zr(Cp)(tBuDAD)(O^Pr), Zr(MeCp)(TMEA), and Zr(Me_5Cp)(TEA) compounds increases with temperature, with Zr(Cp)(tBuDAD)(O^Pr) showing the highest growth rate.\"},{\"panel_id\":\"b\",\"text\":\"The chart shows the growth rates against temperatures for Zr precursors when using ozone as the oxygen source. The growth rate of a film with Zr(MeCp)(TMEA) as precursor sligthtly decreases with temperatures. The growth rate with Zr(Cp)(tBuDAD)(O^Pr) and Zr(Me_5Cp)(TEA) compounds increases with temperature, with Zr(Cp)(tBuDAD)(O^Pr) it is showing the highest growth rate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Growth rate (Å/cycle) | Reagent | \\n|---|---|---|\\n| 198 | 0,22 | Zr(MeCp)(TMEA) |\\n| 252 | 0,26 | Zr(MeCp)(TMEA) |\\n| 300 | 0,25 | Zr(MeCp)(TMEA) |\\n| 348 | 0,27 | Zr(MeCp)(TMEA) |\\n| 373 | 0,32 | Zr(MeCp)(TMEA) |\\n| 398 | 0,09 | Zr(Me_5Cp)(TEA) |\\n| 424 | 0,20 | Zr(Me_5Cp)(TEA) |\\n| 250 | 0,17 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 300 | 0,43 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 324 | 0,62 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 350 | 0,59 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 375 | 0,63 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 398 | 0,68 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 425 | 0,94 | Zr(Cp)(tBuDAD)(O^iPr) |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | Growth rate (Å/cycle) | Reagent | \\n|---|---|---|\\n| 250 | 0,09 | Zr(Me_5Cp)(TEA) |\\n| 275 | 0,19 | Zr(Me_5Cp)(TEA) |\\n| 300 | 0,29 | Zr(Me_5Cp)(TEA) |\\n| 350 | 0,38 | Zr(Me_5Cp)(TEA) |\\n| 374 | 0,36 | Zr(Me_5Cp)(TEA) |\\n| 400 | 0,38 | Zr(Me_5Cp)(TEA) |\\n| 426 | 0,39 | Zr(Me_5Cp)(TEA) |\\n| 252 | 0,39 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 300 | 0,66 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 377 | 1,28 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 198 | 0,64 | Zr(MeCp)(TMEA) |\\n| 250 | 0,57 | Zr(MeCp)(TMEA) |\\n| 300 | 0,57 | Zr(MeCp)(TMEA) |\\n| 352 | 0,52 | Zr(MeCp)(TMEA) |\\n| 375 | 0,52 | Zr(MeCp)(TMEA) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Zr(Me₅Cp)(TEA) displays the lowest growth rates among 3 precursors. It features bulky ligands that sterically shield the central zirconium atom, preventing efficient access for reactants and resulting in significantly slower growth rates. Additionally, the TEA ligand coordinates through three oxygen atoms to form chelating bonds that are stronger than the nitrogen-based bonds in the other complexes, which reduces reactivity toward weak oxidants like water.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Zr(Me₅Cp)(TEA) (did not react to water below 400 °C).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Zr(MeCp)(TMEA) at approx. 250-350 °C.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Zr(MeCp)(TMEA), Zr(Me₅Cp)(TEA).\"}]}]","bbox":[{"panel_id":"a","x":42,"y":17,"width":607,"height":553},{"panel_id":"b","x":47,"y":594,"width":602,"height":543}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/Sanni Seppala et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":653,"height":1144,"image_format":"jpeg","image_sha256":"7de551f5f77bff541302420c28602edd4f41881421dc6a50aa2d34b585565cd5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_16_fig_4.jpg","caption":"FIG. 4. Film densities at different deposition temperatures with (a) water and (b) ozone as the oxygen source.","id":"train/atomic-layer-deposition/experimental-usecase/16/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/16/fig_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the density of films deposited with water and Zr(Cp)(ᵗBuDAD)(OⁱPr), Zr(MeCp)(TMEA), or Zr(Me₅Cp)(TEA) as a function of temperature.\"},{\"panel_id\":\"b\",\"text\":\"The chart shows the density of films deposited with ozone and Zr(Cp)(ᵗBuDAD)(OⁱPr), Zr(MeCp)(TMEA), or Zr(Me₅Cp)(TEA) as a function of temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Density (g/cm³) | Precursor |\\n|---|---|---|\\n| 398 | 4.7 | Zr (Me_5Cp) (TEA) |\\n| 423 | 4.7 | Zr (Me_5Cp) (TEA) |\\n| 200 | 3.8 | Zr (MeCp) (TMEA) |\\n| 249 | 4.4 | Zr (MeCp) (TMEA) |\\n| 300 | 5.2 | Zr (MeCp) (TMEA) |\\n| 325 | 5.6 | Zr (MeCp) (TMEA) |\\n| 347 | 5.8 | Zr (MeCp) (TMEA) |\\n| 375 | 5.8 | Zr (MeCp) (TMEA) |\\n| 248 | 4.7 | Zr (Cp) (tBuDAD) (O^iPr) |\\n| 299 | 5.1 | Zr (Cp) (tBuDAD) (O^iPr) |\\n| 324 | 5.1 | Zr (Cp) (tBuDAD) (O^iPr) |\\n| 347 | 5.2 | Zr (Cp) (tBuDAD) (O^iPr) |\\n| 374 | 5.7 | Zr (Cp) (tBuDAD) (O^iPr) |\\n| 397 | 5.7 | Zr (Cp) (tBuDAD) (O^iPr) |\\n| 424 | 5.8 | Zr (Cp) (tBuDAD) (O^iPr) |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | Density (g/cm³) | Precursor |\\n|---|---|---|\\n| 249 | 5,4 | Zr(Me_5Cp)(TEA) |\\n| 275 | 5,6 | Zr(Me_5Cp)(TEA) |\\n| 301 | 5,8 | Zr(Me_5Cp)(TEA) |\\n| 350 | 5,9 | Zr(Me_5Cp)(TEA) |\\n| 375 | 5,9 | Zr(Me_5Cp)(TEA) |\\n| 399 | 5,9 | Zr(Me_5Cp)(TEA) |\\n| 426 | 5,9 | Zr(Me_5Cp)(TEA) |\\n| 201 | 3,8 | Zr(MeCp)(TMEA) |\\n| 250 | 4,5 | Zr(MeCp)(TMEA) |\\n| 302 | 5,6 | Zr(MeCp)(TMEA) |\\n| 350 | 5,9 | Zr(MeCp)(TMEA) |\\n| 375 | 5,9 | Zr(MeCp)(TMEA) |\\n| 375 | 5,9 | Zr(MeCp)(TMEA) |\\n| 250 | 5,1 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 298 | 5,7 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 375 | 5,9 | Zr(Cp)(tBuDAD)(O^iPr) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Zr(MeCp)(TMEA) (due to higher density).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"300°C would lead to the higher amount of deposited material. Although the growth rates are equal, the film density increased from ~4.5 g/cm3 to ~5.5 g/cm3, as the temperature rises from 250°C to 300°C. The increase in density means that more atoms are packed into the film at the higher temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After ~350 °C at ~ 5.8 g/cm3.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~350 °C and above.\"}]}]","bbox":[{"panel_id":"a","x":46,"y":17,"width":600,"height":533},{"panel_id":"b","x":54,"y":585,"width":591,"height":531}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/Sanni Seppala et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":650,"height":1114,"image_format":"jpeg","image_sha256":"07f6745093c357182f7bf461c439a466cb80f83e050f4f9f706ef0d51d34a70b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_16_fig_9.jpg","caption":"FIG. 9. Leakage current density curves of the $\\mathrm{ZrO_2}$ films deposited with $\\mathrm{O_3}$ at $300^{\\circ}\\mathrm{C}$ . The polarity of the electric field indicates the potential applied to the top electrode.","id":"train/atomic-layer-deposition/experimental-usecase/16/fig_9","sample_id":"atomic-layer-deposition/experimental-usecase/16/fig_9","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the leakage current density versus electric field for films deposited at 300°C using ozone and 3 different Zr precursors (Zr(Cp)(ᵗBuDAD)(OⁱPr), Zr(MeCp)(TMEA) and Zr(Me₅Cp)(TEA))\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Electric field (MV/cm) | Current density (A/cm²) | Reagent |\\n|---|---|---|\\n| -2,5 | 0,000034413049869757 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| -2,4 | 0,000043492871235381 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| -2,3 | 0,000021544346900319 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| -2,3 | 0,000029439237258586 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| -2,3 | 0,000017957144943716 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| -2,2 | 0,000022695105366947 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| -2,2 | 0,000013141473626118 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,0 | 0,000000030610872343 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,1 | 0,000000033095885951 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,1 | 0,000000016394163633 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,2 | 0,000000026186598892 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,3 | 0,000000004581597669 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,4 | 0,000000012971623961 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,4 | 0,000000001153843460 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,4 | 0,000000006768750009 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,5 | 0,000000015163203393 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,6 | 0,000000005355666918 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,6 | 0,000000017269832907 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,7 | 0,000000001384340542 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,8 | 0,000000015562895291 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,8 | 0,000000001660882783 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,9 | 0,000000001916398735 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 0,9 | 0,000000010534134765 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 1,0 | 0,000000026876860122 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 1,1 | 0,000000008120906678 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 1,1 | 0,000000021265892581 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 1,3 | 0,000000029058743813 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 1,4 | 0,000000044062364278 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 1,5 | 0,000000060208944933 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 1,7 | 0,000000086666869037 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| 2,5 | 0,000097431763878509 | Zr(Cp)(tBuDAD)(O^iPr) |\\n| -1,8 | 0,000014582829828531 | Zr(Me_5Cp)(TEA) |\\n| -0,8 | 0,000000068573796153 | Zr(Me_5Cp)(TEA) |\\n| -0,6 | 0,000000134878740803 | Zr(Me_5Cp)(TEA) |\\n| -0,5 | 0,000000005355666918 | Zr(Me_5Cp)(TEA) |\\n| -0,2 | 0,000000007414066842 | Zr(Me_5Cp)(TEA) |\\n| -0,1 | 0,000000000901160733 | Zr(Me_5Cp)(TEA) |\\n| 0,0 | 0,000000048895122296 | Zr(Me_5Cp)(TEA) |\\n| 0,1 | 0,000000000501839650 | Zr(Me_5Cp)(TEA) |\\n| 0,4 | 0,000000037693909754 | Zr(Me_5Cp)(TEA) |\\n| 0,5 | 0,000000004581597669 | Zr(Me_5Cp)(TEA) |\\n| 0,6 | 0,000000031417754461 | Zr(Me_5Cp)(TEA) |\\n| 0,6 | 0,000000008554672536 | Zr(Me_5Cp)(TEA) |\\n| 0,8 | 0,000000084441059201 | Zr(Me_5Cp)(TEA) |\\n| 0,9 | 0,000000010000000000 | Zr(Me_5Cp)(TEA) |\\n| 1,2 | 0,000000040753929659 | Zr(Me_5Cp)(TEA) |\\n| 1,3 | 0,000000012638482029 | Zr(Me_5Cp)(TEA) |\\n| 1,4 | 0,000000066812659151 | Zr(Me_5Cp)(TEA) |\\n| 1,5 | 0,000000004463931423 | Zr(Me_5Cp)(TEA) |\\n| 1,9 | 0,000097431763878509 | Zr(Me_5Cp)(TEA) |\\n| -1,4 | 0,000001772505414982 | Zr(MeCp)(TMEA) |\\n| -1,0 | 0,000000248588037617 | Zr(MeCp)(TMEA) |\\n| -0,4 | 0,000000007414066842 | Zr(MeCp)(TMEA) |\\n| -0,1 | 0,000000001916398735 | Zr(MeCp)(TMEA) |\\n| 0,0 | 0,000000041828175983 | Zr(MeCp)(TMEA) |\\n| 0,1 | 0,000000000397072725 | Zr(MeCp)(TMEA) |\\n| 1,3 | 0,000002182644728397 | Zr(MeCp)(TMEA) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Zr(MeCp)(TMEA)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, it is different. The graph shows that when the electric field is negative, the leakage current is low and similar to the other compounds. When electric field is positive, the leakage current spikes compared to other precursors.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The curve shoots vertically upward at approx. 1.5 - 1.7 MV/cm.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":7,"width":645,"height":493}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/Sanni Seppala et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":648,"height":500,"image_format":"jpeg","image_sha256":"49bd449f26ba57082aa457905da2331b6b06c2da0a6d6ffce4143d0976ca59e9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_25_figure_10.jpg","caption":"Figure 10. $JV$ sweeps for the best solar cells using the same RBF PDT ACIGS absorber and either TGO 0.077, ZGO 0.32, ZTO 0.2, or CdS as the ESL. Scans of solar cells using a pretreatment of either one cycle of ALD $\\mathrm{Al}_2\\mathrm{O}_3$ $\\mathrm{(TMA + H_2O)}$ or three cycles of ALD ZnS (DEZ $+\\mathrm{H}_2\\mathrm{S})$ prior to the deposition of TGO 0.077 are also shown.","id":"train/atomic-layer-deposition/experimental-usecase/25/figure_10","sample_id":"atomic-layer-deposition/experimental-usecase/25/figure_10","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The PV characteristics is illustrated in the chart where the current density (in mA/cm²) is plotted as a function of bias voltage (in V) for various materials, including TGO 0.077, TGO 0.077 TMA, TGO 0.077 ZnS, ZGO 0.32, ZTO 0.20, and CdS.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Bias (V) | TGO 0.077 | TGO 0.077 TMA | TGO 0.077 ZnS | ZGO 0.32 | ZTO 0.20 | CdS |\\n|----------|-----------|---------------|---------------|----------|----------|-----|\\n| -0.5 | -35 | -35 | -35 | -35 | -35 | -35 |\\n| 0.0 | 0 | 0 | 0 | 0 | 0 | 0 |\\n| 0.3 | 0 | 0 | 0 | 0 | 0 | 0 |\\n| 0.5 | 10 | 12 | 8 | 6 | 5 | 4 |\\n| 0.6 | 20 | 22 | 18 | 15 | 12 | 10 |\\n| 0.7 | 30 | 32 | 28 | 25 | 22 | 18 |\\n| 0.8 | 38 | 40 | 36 | 32 | 30 | 25 |\\n| 0.9 | 40 | 42 | 40 | 36 | 34 | 28 |\\n| 1.0 | 40 | 42 | 40 | 36 | 34 | 28 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ZGO 0.32 with a Voc of 704 ± 8 mV. The solar cells with ZGO 0.32 ESLs had almost the same Voc as those with ZTO 0.2 but, on average, worse FF.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TGO 0.077 ESL clearly gave lower Voc and FF compared to the ZnO or Cd-containing alternatives, just like in a previous study on TGAO ESL.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Aside from the blue losses in EQE for the devices with 2.4 eV Eg CdS, all of the solar cells showed good collection with some variation in the interference peak positions due to the difference in their ZnO:Al/ZnO/ESL stack thicknesses\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"One thing that clearly distinguishes the TGO process from the more successful ALD ESL is that it does not contain Zn or its very reactive precursor DEZ. In the first test, the initial ALD conditions of Zn-containing ESLs were therefore mimicked by using three ALD cycles of ZnS (DEZ and H2S) before\\ncontinuing on with a TGO 0.077 ESL. The resulting JV data for these solar cells show that Voc improved to values comparable to using ZGO 0.32 ESL.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":500,"height":346}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/Adam Hultqvist et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":502,"height":350,"image_format":"jpeg","image_sha256":"4e515f157adc0fd344305ab5834ce31130826a60f25caac3c8c1674bf15c53a3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_25_figure_2.jpg","caption":"Figure 2. (a) Cation ratio measured by XRF/RBS for TGO and ZGO films in Table 1 as a function of the pulse ratio of the supercycle process. (b) GPC measured by XRR for the TGO and ZGO films (Table S2).","id":"train/atomic-layer-deposition/experimental-usecase/25/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/25/figure_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between pulse ratio and cation ratio measured from RBF/XPS for TGO and ZGO.\"},{\"panel_id\":\"b\",\"text\":\"The line chart illustrates the growth per cycle against pulse ratio for TGO and ZGO.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulse Ratio Ge/(Ge + Sn or Zn) | Cation Ratio (TGO) | Cation Ratio (ZGO) |\\n|--------------------------------|---------------------|---------------------|\\n| 0.0 | 0.00 | 0.00 |\\n| 0.1 | 0.08 | 0.02 |\\n| 0.2 | 0.15 | 0.03 |\\n| 0.4 | 0.30 | 0.05 |\\n| 0.6 | 0.45 | 0.10 |\\n| 0.8 | 0.70 | 0.40 |\\n| 1.0 | 1.00 | 1.00 |\"},{\"panel_id\":\"b\",\"text\":\"| Pulse Ratio Ge/(Ge + Sn or Zn) | Growth per Cycle (TGO) [Å/cycle] | Growth per Cycle (ZGO) [Å/cycle] |\\n|--------------------------------|-----------------------------------|-----------------------------------|\\n| 0.0 | 1.10 | 2.00 |\\n| 0.1 | 1.05 | 1.80 |\\n| 0.2 | 1.00 | 1.60 |\\n| 0.4 | 0.95 | 1.40 |\\n| 0.6 | 0.90 | 1.20 |\\n| 0.8 | 0.85 | 1.00 |\\n| 1.0 | 0.80 | 0.80 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The GPC for these films decreased for an increasing Ge pulse ratio of the ALD ZGO process, even to such an extent that it became substantially lower than for the binary GeOy and ZnO processes. The QCM data in the SI also showed that the MPC for each GeOy or ZnO subcycle decreased in the ternary ZGO process. All of these trends suggest that the GeOy and ZnO subcycles were not fully compatible with each other due to unfavorable surface conditions.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The measured RBS/XRF [Ge]/([Ge] + [Sn]) cation ratio, x-value, for TGO films on fused silica is just a bit lower than the ALD Ge/(Ge + Sn) pulse ratio. The measured growth per cycle (GPC) for these films decreases as the pulse ratio increases (b) . This trend appears almost as a linear combination of the lower GPC GeOy subcycle and the larger GPC SnOy subcycle. Both the trend in the cation ratio and the trend in GPC are also supported by QCM data suggest that the SnOy and GeOy subcycles affect each other only to a minor extent.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Varying the Ge/(Ge + Zn) pulse ratio of the ALD process varied the XRF/RBS [Ge]/([Ge] +[Zn]) cation ratio, the x-value, measured for films on fused\\nsilica, but the film cation ratio severely lags behind the ALD pulse ratio\"}]}]","bbox":[{"panel_id":"b","x":2,"y":366,"width":504,"height":352},{"panel_id":"a","x":0,"y":0,"width":507,"height":364}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/Adam Hultqvist et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":508,"height":719,"image_format":"jpeg","image_sha256":"80089a83fb11fcacebd3bb0acf1491c25a316602751d003b45aae81f7f990c50","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_25_figure_8.jpg","caption":"Figure 8. Schematic illustration of the roughly estimated $E_{c}$ and $E_{v}$ trends as a function of the cation ratio, $x_{i}$ of a TGO and b ZGO. The estimations are based on the optical absorption and the XPS $E_{v}$ spectra from this study and from the $\\mathrm{SnO}_{y} / \\mathrm{CIGS}$ , and $\\mathrm{ZnO} / \\mathrm{CIGS}$ band offset and ACIGS band position data from previous studies. The cation ratio where the ACIGS solar cells (see the next section) start showing FF losses is also indicated.","id":"train/atomic-layer-deposition/experimental-usecase/25/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/25/figure_8","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the energy difference between conduction bands and valence bands of ACIGS and TGO materials as a function of TGO cation ratio.\"},{\"panel_id\":\"b\",\"text\":\"The line chart illustrates the energy difference between conduction bands and valence bands of ACIGS and ZGO materials as a function of ZGO cation ratio.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TGO cation ratio (x) | E_c (TGO) [eV] | E_v (TGO) [eV] | E_c (ACIGS) [eV] | E_v (ACIGS) [eV] |\\n|-----------------------|-----------------|-----------------|-------------------|-------------------|\\n| 0.00 | +0.2 | -3.0 | 0.0 | -1.0 |\\n| 0.10 | +0.3 | -3.0 | 0.0 | -1.0 |\\n| 0.20 (FF loss) | +0.4 | -3.0 | 0.0 | -1.0 |\\n| 0.30 | +0.6 | -3.0 | 0.0 | -1.0 |\"},{\"panel_id\":\"b\",\"text\":\"| ZGO cation ratio (x) | E_c (ZGO) [eV] | E_v (ZGO) [eV] | E_c (ACIGS) [eV] | E_v (ACIGS) [eV] |\\n|-----------------------|-----------------|-----------------|-------------------|-------------------|\\n| 0.00 | +0.2 | -3.5 | 0.0 | -1.0 |\\n| 0.10 | +0.3 | -3.6 | 0.0 | -1.0 |\\n| 0.20 | +0.4 | -3.7 | 0.0 | -1.0 |\\n| 0.30 (FF loss) | +0.5 | -3.8 | 0.0 | -1.0 |\\n| 0.40 | +0.6 | -4.0 | 0.0 | -1.0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The estimations are based on the optical absorption and the XPS Ev spectra from this study and from the SnOy/CIGS, and ZnO/CIGS band offset and ACIGS band position data from previous studies\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"While the low-cation-ratio ZGO films likely have direct Eg, there was a transition toward X-ray amorphous films for higher cation ratios, which are likely\\nto give them indirect Eg. For simplicity, all of the Eg values of ZGO were therefore estimated using an indirect Eg model.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. For ZGO, FF losses occur at a cation ratio of 0.32\\n2. For TGO, FF losses occur at a cation ratio of 0.16\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TGO sample set also showed a noteworthy correlation between the large tailing observed in the optical absorption and XPS Ev spectra, the high resistivity, and the amorphous nature of these films. Compared to the previous study using a high-temperature ALD process, the films in this\\nstudy are similar in terms of being amorphous, showing tails in the optical absorption and an increasing Ec position with increasing Ge content.\"}]}]","bbox":[{"panel_id":"b","x":0,"y":363,"width":506,"height":330},{"panel_id":"a","x":1,"y":1,"width":504,"height":355}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/Adam Hultqvist et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":508,"height":714,"image_format":"jpeg","image_sha256":"cf95aa1c61c3f0e226c6100b7767c5dda4f7fbfacbb9ee726b240d15dfc93eaf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_25_figure_9.jpg","caption":"Figure 9. $JV$ sweeps of representative solar cells using (a) TGO and (b) ZGO ESLs.","id":"train/atomic-layer-deposition/experimental-usecase/25/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/25/figure_9","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the JV characteristics of devices using TGO as ESL with varying doping values.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the JV characteristics of devices using ZGO as ESL with varying doping values.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Bias (V) | CdS | x = 0 | x = 0.065 | x = 0.077 | x = 0.10 | x = 0.16 | x = 0.30 |\\n|----------|-----|-------|-----------|-----------|----------|----------|----------|\\n| -0.5 | -35 | -35 | -35 | -35 | -35 | -35 | -30 |\\n| 0.0 | 0 | 0 | 0 | 0 | 0 | 0 | -3 |\\n| 0.3 |-35 | -35 | -35 | -35 | -35 | -35 | 0 |\\n| 0.5 | -35 | -10 | -15 | -18 | -20 | -18 |0 |\\n| 0.7 | 0 | 20 | 25 | 28 | 30 | 20 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Bias (V) | CdS | x = 0 | x = 0.032 | x = 0.12 | x = 0.19 | x = 0.26 | x = 0.32 | x = 0.37 |\\n|----------|-----|-------|-----------|----------|----------|----------|----------|----------|\\n| -0.4 | -35 | -35 | -40 | -35 | -35 | -35 | -35 | -35 |\\n| 0.0 | -35 | -35 | -35 | -35 | -35 | -35 | -35 | -35 |\\n| 0.2 | -35 | -30 | -28 | -32 | -34 | -35 | -35 | -35 |\\n| 0.4 | 0 | 20 | 30 | 35 | -34 | -35 | 25 | -10 |\\n| 0.6 | 0 | - | - | - | 0 | 0 | 0 | 0 |\\n| 0.8 | - | - | - | - |20 | 20 | 40 | 20 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the Ge content was increased for the ZGO films, the solar cells showed a decrease in Voc, compared to solar cells using ZnO . When the Ge content increased further, there was an increase in Voc up to ZGO 0.37.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"From figure a it appears, the device characteristics of CdS is better than device b as the Voc seems higher in case a than case b.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. ZnO:Al/ZnO/TGO/ACIGS/Mo/SLG solar cell stacks\\n, 2. ZnO:Al/ZnO/ZGO/ACIGS/Mo/SLG solar cell stacks\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Until TGO 0.10, the Voc of the solar cells increased with increasing Ge content. At the same time, the short circuit current density (Jsc) remained unchanged. For TGO 0.16, both the Voc and the FF started to drop off due to a kink in the J−V curve around Voc. Finally, the solar cells with TGO 0.30 show low FF, low Voc and a tiny Jsc, suggesting that the transport of photoexcited electrons has been almost completely hampered.\"}]}]","bbox":[{"panel_id":"b","x":0,"y":353,"width":497,"height":353},{"panel_id":"a","x":0,"y":4,"width":499,"height":357}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/Adam Hultqvist et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":503,"height":708,"image_format":"jpeg","image_sha256":"de9a22f837f59bce27fff78c273e949785ae4e67f835ad7ad75d1fc95f50aed4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_1.jpg","caption":"Figure 1. ALD growth rates for $\\mathrm{In}_2\\mathrm{O}_3$ $(\\Delta)$ $\\mathrm{SnO_2}$ $(\\Omega)$ and ITO $(\\bullet)$ versus deposition temperature. Potential ALD window for ITO growth is indicated.","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_1","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart compares the growth rate per cycle of Tin Oxide, Indium Oxide, and ITO films as a function of deposition temperature. Both Tin and Indium Oxide show a general increase in growth rate with temperature, while ITO exhibits a stable region between ~200 - 300 °C, identified as the “ITO Window,” where optimal co-deposition occurs.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition Temperature (°C) | Tin Oxide (Å/Cycle) | Indium Oxide (Å/Cycle) | ITO (Å/Cycle) |\\n|-----------------------------|--------------------|-------------------------|---------------|\\n| 100 | 0.5 | 1.2 | 1.3 |\\n| 150 | 0.8 | 1.3 | 1.2 |\\n| 200 | 1.5 | 1.4 | 1.3 |\\n| 250 | 2.0 | 1.5 | 1.4 |\\n| 300 | 2.8 | 1.6 | 1.5 |\\n| 350 | 2.9 | 2.5 | 1.6 |\\n| 400 | 3.0 | 2.7 | 1.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Tin Oxide shows a steep increase in growth rate with temperature, Indium Oxide increases more moderately, and ITO remains stable between 200–300 °C, forming a defined “ITO Window.”\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Growth rate (Å/Cycle).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Tin Oxide, Indium Oxide, ITO (Indium Tin Oxide)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":597,"height":583}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":597,"height":583,"image_format":"jpeg","image_sha256":"5b979595bd0059ef4b778f56f18fae8d2d3cc54d339d8565296a00a1e17c2017","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_3.jpg","caption":"Figure 3. $\\mathrm{SnO_2}$ content versus percentage of $\\mathrm{SnO_2}$ cycles for ALD ITO films determined by XRF. Dashed line shows expected $\\mathrm{SnO_2}$ content as calculated using a rule-of-mixtures formula.","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the increase in SnO₂ content (mol %) as a function of SnO₂ cycle percentage, as measured by XRF. A dashed line indicates the expected values from the Rule of Mixtures. The measured data rises faster than predicted, suggesting non-linear incorporation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| % SnO₂ Cycles | SnO₂ Content (mol %) |\\n|---------------|----------------------|\\n| 0 | 0 |\\n| 5 | 2 |\\n| 10 | 12 |\\n| 15 | 26 |\\n| 25 | 40 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The measured SnO₂ content increases faster than the Rule of Mixtures prediction, indicating a non-linear trend in incorporation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Enhanced SnO₂ uptake, Possible non-ideal mixing behavior, Deviations from theoretical assumptions\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":572,"height":570}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":572,"height":570,"image_format":"jpeg","image_sha256":"62decce0f40a7ba517118b3cdd5a7bfc0108d6a4ac540d5e0780c6677e11c62b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_30_figure_8.jpg","caption":"Figure 8. Representative magnetization versus external field curves of doped iron oxide films deposited from $\\mathrm{CpFeC_5H_4CHN(CH_3)_2}$ at $375^{\\circ}C$ Mg/Fe atomic ratios, film thicknesses, hysteresis parameters and measurement temperatures are given by labels. Annealing was carried out in forming gas at $450^{\\circ}C$ for $30\\mathrm{min}$ (Color online)","id":"train/atomic-layer-deposition/experimental-usecase/30/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/30/figure_8","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows hysteresis loops of magnetic material Mg/Fe = 0.017 at various temperatures (10, 50, 100, 200, 300 K) with as deposited condition , the thickness of the film ~425 nm\"},{\"panel_id\":\"b\",\"text\":\"The figure shows hysteresis loops of magnetic material Mg/Fe = 0.061 at various temperatures (10, 50, 100, 200, 300 K) with as deposited condition , the thickness of the film ~411 nm\"},{\"panel_id\":\"c\",\"text\":\"The figure shows hysteresis loops of magnetic material Mg/Fe = 0.017 at various temperatures after annealing at 450◦C\"},{\"panel_id\":\"d\",\"text\":\"The figure shows hysteresis loops of magnetic material Mg/Fe = 0.061 at various temperatures after annealing at 450◦C. The hysteresis loops shows noticable magnetic behavior with high magnetic saturations and low coercive fields.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (K) | Saturation Magnetization Ms (emu/cm³) | Coercivity Hc (Oe) |\\n|-----------------|---------------------------------------|-------------------|\\n| 300 | ~200 | 300 |\\n| 200 | ~200 | ~300 |\\n| 100 | ~200 | ~300 |\\n| 50 | ~200 | ~300 |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (K) | Saturation Magnetization Ms (emu/cm³) | Coercivity Hc (Oe) |\\n|-----------------|---------------------------------------|-------------------|\\n| 300 | 491 | 150 |\\n| 200 | ~500 | ~150 |\\n| 100 | ~500 | ~150 |\\n| 50 | ~500 | ~150 |\\n| 10 | ~500 | ~150 |\"},{\"panel_id\":\"c\",\"text\":\"| Temperature (K) | Saturation Magnetization Ms (emu/cm³) | Coercivity Hc (Oe) |\\n|-----------------|---------------------------------------|-------------------|\\n| 300 | 280 | 280 |\\n| 200 | ~290 | ~280 |\\n| 100 | ~290 | ~280 |\\n| 50 | ~290 | ~280 |\\n| 10 | ~290 | ~280 |\"},{\"panel_id\":\"d\",\"text\":\"| Temperature (K) | Saturation Magnetization Ms (emu/cm³) | Coercivity Hc (Oe) |\\n|-----------------|---------------------------------------|-------------------|\\n| 300 | 274 | 200 |\\n| 200 | ~280 | ~200 |\\n| 100 | ~280 | ~200 |\\n| 50 | ~280 | ~200 |\\n| 10 | ~280 | ~200 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the Mg content increases, the Hc value tends to decrease.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the as-deposited state, increasing Mg/Fe from 0.017 to 0.061 increases Ms from about 200 to about 491 emu/cm³. Over the same change, Hc decreases from about 300 to about 150 Oe. This matches the broader trend described in the paper that higher Mg in this range reduces coercivity while increasing saturation magnetization up to a limit.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The best room-temperature magnetization in this figure is the as-deposited Mg/Fe = 0.061 film (panel b). It shows Ms ≈ 491 emu/cm³ at 300 K, substantially higher than the Mg/Fe = 0.017 film and higher than either annealed case. This directly supports the process-optimization message that moderate Mg levels can strongly enhance magnetic performance (while other processing steps can change Ms and Hc in different directions).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mg incorporation and FGA alter the cation distribution in the spinel lattice. At moderate Mg levels, magnetite formation is favored, increasing Mₛ and lowering Hc. At higher Mg levels, Mg²⁺ substitutes Fe³⁺ in octahedral sites, reducing magnetic exchange interactions and introducing lattice strain, which increases coercivity and decreases magnetization. Annealing further modifies grain boundaries and defect density, influencing domain wall motion.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. In the nondoped and as-deposited films the HC ranged from 485 to 1950 Oe between 300 and 10 K.\\n2. In the films with Mg/Fe atomic ratio of 0.017 the HC was in the range of 300–1260 Oe between 300 and 10 K. \\n3. With increase in the Mg content to Mg/Fe ratio of 0.062 the HC decreased toward the range of 150–460 Oe between 300 and 10 K.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 10 K.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing temperature reduces both the coercive field and the saturation magnetisation. The hysteresis loops become narrower at higher temperatures, indicating weaker magnetic ordering.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The coercive field decreases as the Mg/Fe ratio increases.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mg/Fe=0.017 and the film as-deposited\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The hysteresis parameter Hc seems to decrease for increasing measurement temperature. This is seen in all subfigures, however the trend is less big for the highly doped films.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Hc is 1500 Oe.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Saturation magnetization increases from ~200 emu cm⁻³ at low Mg content to ~491 emu cm⁻³ at higher Mg content.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"x-axis: magnetic field (Oe)\\n\\ny-axis: magnetization, M (emu/cm³)\\n\\ncurves: measurements at 300, 200, 100, 50, and 10 K for the same sample/state\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In each panel, Hc increases as temperature decreases (loops widen at low T), which is typical for ferri/ferromagnetic films. After forming-gas annealing, Hc is generally reduced at higher temperatures compared with the as-deposited state for these kinds of samples. The paper attributes the anneal-driven reduction in coercivity to crystal growth and increased average magnetic domain size.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"FGA modifies both saturation magnetization (Mₛ) and coercivity (Hc). For low Mg content (Mg/Fe = 0.017), Mₛ increases from 200 → 280 emu/cm³, and Hc slightly decreases from 300 → 280 Oe, indicating improved magnetite crystallinity and reduced pinning. For higher Mg content (Mg/Fe = 0.061), Mₛ decreases from 491 → 274 emu/cm³, while Hc increases from 150 → 200 Oe, suggesting that excess Mg and annealing lead to cation redistribution and reduced magnetic Fe content.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As-deposited: Increasing Mg/Fe from 0.017 to 0.061 significantly raises Mₛ (200 → 491 emu/cm³) and lowers Hc (300 → 150 Oe), indicating that moderate Mg promotes magnetite formation and soft magnetic behavior.\\nAfter FGA: Low Mg films gain magnetization (Mₛ = 280 emu/cm³), while high Mg films lose magnetization (Mₛ = 274 emu/cm³) and become harder (Hc rises to 200 Oe).\\nMg doping initially enhances magnetization, but excessive Mg combined with annealing reduces Fe magnetic sites and increases anisotropy.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, only up to a certain limit.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The coercive field (Hc) decreases systematically with increasing Mg doping, indicating that Mg addition softens the magnetic behaviour. For instance, Hc drops from roughly 485-1950 Oe in undoped films to 150-460 Oe at a Mg/Fe ratio of 0.062. Annealing further reduces Hc, consistent with structural relaxation and grain coarsening. Meanwhile, the saturation magnetization (μs) increases with moderate Mg incorporation, suggesting improved ferromagnetic ordering and a higher proportion of reduced iron oxide phases such as magnetite. However, excessive Mg content diminishes μs again, likely due to the formation of a nonmagnetic ternary phase like magnesioferrite.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 820 and 895 K.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Curie temperatures remain between 820 and 895 K, close to that of bulk magnetite, confirming that the dominant phase retains strong ferrimagnetic character.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Annealing of all films was carried out at 450 °C for 30 minutes.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Magnetic field (Oe).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The loop becomes wider as the temperature drops.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 300 K.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The annealing seems to have the effect to create films with roughly the same saturation magnetization, even if the as-deposited films deviate from this level.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Coercivity decreases slightly from ~300 Oe to ~280 Oe after annealing.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Annealing likely reduces structural disorder and improves cation distribution within the iron-oxide lattice. This suppresses antiferromagnetic coupling and enhances net magnetic alignment. The increase in saturation magnetization therefore reflects improved magnetic ordering rather than thickness effects.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The as-deposited film with Mg/Fe = 0.061 offers the best performance for sensors and spintronics due to its high Mₛ (491 emu/cm³) and low Hc (150 Oe), enabling strong magnetic response and easy switching. FGA-treated low-Mg films (Mg/Fe = 0.017) are suitable for applications requiring moderate coercivity and thermal stability, while high-Mg annealed films may be useful for data storage where higher Hc provides stability against demagnetization.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The coercivity and magnetic moment decreased with increase in magnesium content. Therefore, high amounts of magnesium may not be advantageous in terms of increasing both HC and μS, maybe due to the formation of an additive ternary phase, e.g. magnesioferrite, in the film bulk.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The as-deposited sample ,The Mg = 0.001 doped sample ,The Mg = 0.017 doped sample.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The main affected properties are the coercive field, Saturation magnetization, Loop shape of the hysteresis curves, Temperature dependence of magnetization\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"280 emu/cm^3.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Hc value is higher for the annealed samples than for the as-deposited one.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The annealed film\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The as-deposited films show that with increasing dopant level the saturated magnetization increases significantly, whilst the Hc parameter decreases.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Measuring hysteresis down to 10 K reduces thermal activation of domain walls, making intrinsic magnetic anisotropy more apparent. This helps separate temperature-driven loop broadening from composition-dependent effects. The comparison clarifies how Mg content and annealing influence intrinsic magnetic ordering.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The annealing procedure also decreased the HC.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Adjusting the Mg content allows fine control over the balance between coercivity and saturation magnetization, which is crucial for practical magnetic applications. Moderate Mg doping can soften the magnetic response by lowering coercivity while maintaining or slightly improving magnetization, making the films more suitable for applications such as magnetic sensors or spintronic components. However, excessive Mg incorporation can introduce secondary phases like magnesioferrite, which limits further performance gains. This figure shows that careful compositional tuning, combined with annealing and temperature control, is essential for optimizing magnetic behavior.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":4,"width":499,"height":384},{"panel_id":"b","x":500,"y":2,"width":510,"height":393},{"panel_id":"c","x":8,"y":398,"width":502,"height":391},{"panel_id":"d","x":500,"y":394,"width":511,"height":395}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/Kaupo Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1011,"height":791,"image_format":"jpeg","image_sha256":"dee718efc7dc61b42f321ddf933a34d2dddbc5d278becb3dfc59faaf204bb344","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_30_figure_9.jpg","caption":"Figure 9. Magnetization versus measurement temperature curves of selected samples after forming gas annealing measured under FGD field cooling (ZFC) and field cooling (FC) regimes. The composition, growth temperatures and film thicknesses are described by labels. The peaks associated with the Verwey transition of magnetite are denoted by $\\mathrm{T_V}$","id":"train/atomic-layer-deposition/experimental-usecase/30/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/30/figure_9","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot shows the temperature dependence of magnetic susceptibility for Fe₂O₃ nanoparticles grown at 450 °C with an average diameter of 705 nm. Measurements were carried out using a field gradient apparatus (FGA) under an applied magnetic field of 1000 Oe, following zero-field-cooled (ZFC) and field-cooled (FC) protocols after forming gas annealing. Features associated with the Verwey transition temperature (T𝑉) of magnetite are indicated.\"},{\"panel_id\":\"b\",\"text\":\"This plot presents the temperature dependence of magnetic moment per gram for a composite consisting of 100 × Fe₂O₃ and 4 × (3 × MgO + 100 × Fe₂O₃), grown at 425 °C with an average diameter of 183 nm. Measurements were performed using an FGA under a magnetic field of 1000 Oe in both ZFC and FC modes after forming gas annealing. The Verwey transition temperature (TV) is marked.\"},{\"panel_id\":\"c\",\"text\":\"The plot shows the temperature dependence of magnetic moment per gram for a composite composed of 100 × Fe₂O₃ and 15 × (10 × MgO + 100 × Fe₂O₃), grown at 375 °C with an average diameter of 411 nm. Magnetization measurements were conducted using an FGA with an applied magnetic field of 1000 Oe under ZFC and FC conditions following forming gas annealing, with the Verwey transition temperature (T𝑉) indicated.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (K) | FC (emu/g) | ZFC (emu/g) |\\n| --------------- | ---------- | ----------- |\\n| 10 | ~0.10 | ~0.01 |\\n| 50 | ~0.10 | ~0.03 |\\n| 100 | ~0.10 | ~0.07 |\\n| 125 | ~0.10 | ~0.10 |\\n| 200 | ~0.10 | ~0.09 |\\n| 300 | ~0.10 | ~0.08 |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (K) | FC (emu/g) | ZFC (emu/g) |\\n| --------------- | ---------- | ----------- |\\n| 10 | ~0.055 | ~0.030 |\\n| 50 | ~0.055 | ~0.040 |\\n| 100 | ~0.055 | ~0.050 |\\n| 120 | ~0.055 | ~0.055 |\\n| 200 | ~0.055 | ~0.050 |\\n| 300 | ~0.055 | ~0.045 |\"},{\"panel_id\":\"c\",\"text\":\"| Temperature (K) | FC (emu/g) | ZFC (emu/g) |\\n| --------------- | ---------- | ----------- |\\n| 10 | ~0.069 | ~0.068 |\\n| 50 | ~0.069 | ~0.069 |\\n| 100 | ~0.069 | ~0.070 |\\n| 150 | ~0.068 | ~0.069 |\\n| 200 | ~0.067 | ~0.068 |\\n| 300 | ~0.066 | ~0.067 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Growth temperature and composition.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For all three graphs, samples with different thickness are used. So it could be that this thickness plays a factor in the different magnetizations.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It suggests increased magnetic disorder and weakened long-range ordering.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In (a) a pronounced anomaly is marked at ~125 K. In (b) a similar anomaly remains visible around ~120 K. In (c) the anomaly is much less prominent, consistent with the stated trend that the Verwey signature weakens in films that are more disordered and/or contain higher MgO amounts.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A Verwey-type transition near ~120 K is a characteristic low-temperature transformation associated with magnetite (Fe₃O₄) (cubic-to-monoclinic symmetry change tied to cation ordering). Observing a step/jump in M–T around 120–125 K is therefore used as supporting evidence for the presence of magnetite in mixed-phase samples. In this paper, that interpretation is explicitly noted for selected annealed films showing the jump.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Verwey transition depends on stoichiometric magnetite with ordered Fe²⁺/Fe³⁺ distribution. Mg substitution and oxygen vacancies disrupt this order, lowering or smearing Tᵥ. Grain size and strain also matter: larger, well-crystallized grains show sharp Tᵥ and strong ZFC/FC splitting, while smaller or defect-rich grains broaden the transition and reduce irreversibility.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The transition lost its prominence in as-deposited films, in relatively disordered films grown at the lowest temperatures examined and in films containing relatively higher amounts of magnesium oxide\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Verwey transition visible near 120–125 K for composition variations, Lower growth temperatures reduce the transition magnitude, Thicker films show minor decreases in magnetization but overall similar trends\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"120 K.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Either the growth temperature could be lowered, or the Mg/Fe ratio could be increased.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dopant level is Mg/Fe = 0.062.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It implies well-preserved magnetite-like ordering.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Cryogenic sensors: Prefer films with a sharp Verwey transition and strong ZFC/FC separation (e.g., thick, low-Mg film), as these provide distinct low-temperature magnetic signatures. 2. Room-temperature devices: Favor films with suppressed or broadened Tᵥ (e.g., high-Mg film), ensuring stable magnetic behavior across 150–300 K without abrupt changes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The temperature dependence of magnetic moment was measured at a magnetic moment of 1000 Oe\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The undoped Fe₂O₃ sample shows a clear ZFC peak near 125 K, indicating strong blocking behavior. The Mg-containing sample grown at 425 °C shows a similar but weaker peak near 120 K. In contrast, the sample grown at 375 °C exhibits minimal FC–ZFC separation, suggesting suppressed or absent blocking.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1000 Oe.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Fe₂O₃ sample grown at 450 °C, The Fe₂O₃–MgO composite grown at 425 °C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 120–125 K.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"450 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The temperature is 125 K.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems that increasing the doping level, slightly increases the magnetic moment.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The separation reflects irreversible magnetic behavior caused by domain pinning or blocked magnetic moments. A strong divergence indicates a magnetically ordered phase with thermal history dependence. The convergence of FC and ZFC curves marks the temperature where magnetic domains become thermally unpinned.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It rises sharply and reaches a peak near 125 K.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ZFC: zero-field cooling measurement curve\\n\\nFC: field-cooling measurement curve\\n\\nApplied field during M–T: 1000 Oe\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Magnetite-like content is linked to the stronger ferrimagnetic response desired in these films, while hematite-dominant films tend to show much weaker magnetization. A Verwey-type feature provides an additional, temperature-dependent indicator that reduced/spinel-like iron oxide is present after forming-gas anneal. This helps connect processing (growth temperature, Mg dosing, anneal) to the observed magnetic behavior.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Verwey transition (Tᵥ ≈ 120–125 K) is a hallmark of magnetite (Fe₃O₄) with long-range charge ordering. Its appearance after FGA shows that annealing in a reducing atmosphere successfully converted hematite or maghemite phases into magnetite and improved crystallinity. This process also reduces oxygen content and stabilizes Fe²⁺/Fe³⁺ mixed valence states, essential for magnetite formation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Pure Fe₂O₃ film (450 °C, thick): Shows a sharp Tᵥ at ~125 K and strong ZFC/FC separation, indicating well-ordered magnetite after FGA.\\nLow Mg doping (Mg/Fe ≈ 0.021, 425 °C): Tᵥ shifts slightly lower (~120 K) and ZFC/FC separation narrows, suggesting smaller grains and mild disorder. High Mg doping (Mg/Fe ≈ 0.062, 375 °C): Tᵥ is broadened or suppressed, and ZFC/FC curves nearly overlap, indicating disrupted charge ordering and increased structural disorder due to Mg substitution and lower growth temperature\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A jump in magnetization-versus-temperature curves is known as the Verwey transition. At the Verwey transition temperature, TV, ca. 120 K, magnetite is supposed to transform from cubic (T > TV) to monoclinic (T < TV) symmetry. This transformation is related to changes in cation ordering and, at a slightly higher temperature (ca. 130 K) to changes in magnetocrystalline anisotropy as well as switching the easy and hard magnetization axes. The Verwey transition can be used for identification of magnetite in pure or mixed phase samples.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1000 Oe.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At the Verwey transition temperature, TV, ca. 120 K, magnetite is supposed to transform from cubic (T > T_V) to monoclinic (T < T_V) symmetry.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the Mg fraction in the film increases, T_V decreases. As the Mg fraction increases, the difference between ZFC and FC also becomes more pronounced, but the transition point becomes less clear. Finally, an increase in Mg content also causes an overall decrease of magnetization, which is consistent with earlier observations in this work.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the undoped iron oxide film, it is 125 K and a magnetization of 0.11 emu/g; The iron oxide film with Mg/Fe = 0.021, T_V = 120 K, M = 0.055; The iron oxide film with Mg/Fe = 0.062, the T_V is not stated.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 125 K, as indicated by the label Tv.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 120 K.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 125 K.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Composition strongly affects the Verwey transition, with magnetite-containing films showing a peak near 120–125 K. Growth temperature also influences magnetic behavior, as lower temperatures suppress the Verwey transition, leading to smaller differences between FC and ZFC magnetization. Film thickness has a subtler effect, slightly modifying magnetization magnitudes but not significantly altering the overall transition features. Together, these factors determine the magnetic phase evolution and the shape of the multi-line curves.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":512,"height":429},{"panel_id":"b","x":5,"y":434,"width":522,"height":415},{"panel_id":"c","x":5,"y":855,"width":522,"height":418}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/Kaupo Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":528,"height":1280,"image_format":"jpeg","image_sha256":"15c457cf92189c9aa5b6e1aa40acaa232e48cdaf1bb9d043beb39c87e84da1a9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_31_figure_1.jpg","caption":"Figure 1. XPS depth profile of thermal ALD Co on Si(001) substrate from $\\mathrm{CoCp(CO)_2}$ and $\\mathrm{H}_2$ showing the Co, C, O, and Si contents in the film.","id":"train/atomic-layer-deposition/experimental-usecase/31/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/31/figure_1","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure shows an XPS depth profile of a thermal-ALD Co film deposited on Si(001) using CoCp(CO)₂ and H₂. The profile reveals a carbon-rich film with ~40–50 at% C and only ~45–50 at% Co throughout most of the depth, along with a few at% oxygen contamination. The sharp rise in Si near ~25–30 min sputtering marks the Co/Si interface, confirming the film thickness. Overall, the data demonstrate that thermal ALD produces a Co–C composite rather than pure metallic Co, indicating poor ligand removal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Element|Trend across film|Interpretation|\\n|--------|-----------------|--------------|\\n|Co|~45–50 at% throughout|Indicates incomplete metal formation|\\n|C|~40–50 at% throughout|Severe carbon contamination from ligands|\\n|O|Low, few at%|Minor oxidation/impurity|\\n|Si|Rises sharply at end|Marks Co/Si interface (film thickness)|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Carbon\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Interconnect applications require low-resistivity, high-purity metallic cobalt. The XPS depth profile reveals that the thermal-ALD film contains nearly equal amounts of cobalt and carbon, forming a carbon-rich Co–C composite rather than metallic Co. Such films exhibit very high electrical resistivity and poor reliability, making them unsuitable for device applications and motivating the need for plasma-enhanced ALD.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"High carbon content (~40–50 at%), Relatively low cobalt content (~45–50 at%), Presence of oxygen impurities, Formation of a Co–C composite structure\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":540,"height":409}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/31/Han-Bo-Ram Lee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":544,"height":414,"image_format":"jpeg","image_sha256":"7866bf6abb3f8b279110bcacd69f0ef2524b6c5c33563b7f27c33e8dc514da89","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_32_figure_5.jpg","caption":"Figure 5. Leakage current densities vs electric fields of thermal and PEALD (a) $\\mathrm{Ta}_2\\mathrm{O}_5$ and (b) $\\mathrm{TiO_2}$ thin film. The film thickness was $10\\mathrm{nm}$ for all films, and the growth temperatures were $250^{\\circ}\\mathrm{C}$ for $\\mathrm{Ta}_2\\mathrm{O}_5$ and $200^{\\circ}\\mathrm{C}$ for $\\mathrm{TiO_2}$ respectively.","id":"train/atomic-layer-deposition/experimental-usecase/32/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/32/figure_5","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Leakage current density versus electric field for 10 nm Ta₂O₅ films grown at 250°C. PE-ALD yields approximately two orders of magnitude lower leakage (~8×10⁻⁷ A/cm²) compared to thermal ALD (~6×10⁻⁵ A/cm²) at 1 MV/cm.\"},{\"panel_id\":\"b\",\"text\":\"Leakage current density versus electric field for 10 nm TiO₂ films grown at 200°C. PE-ALD again shows lower leakage (~7×10⁻⁴ A/cm²) than thermal ALD (~5×10⁻³ A/cm²) at 1 MV/cm, though the difference is smaller than for Ta₂O₅.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Electric Field, MV/cm | Thermal ALD (A/cm²) | PE-ALD (A/cm²) |\\n|---|---|---|\\n| 0 | 1×10⁻⁷ | 5×10⁻⁸ |\\n| 0.1 | 5×10⁻⁷ | 7×10⁻⁸ |\\n| 0.25 | 3×10⁻⁶ | 1×10⁻⁷ |\\n| 0.5 | 2×10⁻⁵ | 3×10⁻⁷ |\\n| 0.75 | 5×10⁻⁵ | 7×10⁻⁷ |\\n| 1.0 | 7×10⁻⁵ | 2×10⁻⁶ |\\n| 1.5 | 1×10⁻⁴ | 7×10⁻⁶ |\\n| 2.0 | 1.5×10⁻⁴ | 2×10⁻⁵ |\"},{\"panel_id\":\"b\",\"text\":\"| Electric Field, MV/cm | Thermal ALD (A/cm²) | PE-ALD (A/cm²) |\\n|---|---|---|\\n| 0 | 2×10⁻³ | 5×10⁻⁵ |\\n| 0.1 | 3×10⁻³ | 8×10⁻⁵ |\\n| 0.25 | 3.5×10⁻³ | 2×10⁻⁴ |\\n| 0.5 | 4×10⁻³ | 4×10⁻⁴ |\\n| 0.75 | 5×10⁻³ | 5×10⁻⁴ |\\n| 1.0 | 6×10⁻³ | 6×10⁻⁴ |\\n| 1.5 | 8×10⁻³ | 8×10⁻⁴ |\\n| 2.0 | 1×10⁻² | 1×10⁻³ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"PE-ALD Ta₂O₅ exhibits a leakage current density of approximately 8×10⁻⁷ A/cm² at 1 MV/cm, which is about two orders of magnitude lower than thermal ALD Ta₂O₅ at approximately 6×10⁻⁵ A/cm². This substantial improvement makes PE-ALD Ta₂O₅ from PDMAT competitive with or better than previously reported values for PE-ALD Ta₂O₅ from ethoxide precursors.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Lower oxygen vacancy concentration, reduced carbon or silicon contamination, and smoother oxide/substrate interfaces observed by TEM.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"PE-ALD Ta₂O₅, with the lowest leakage current density of approximately 8×10⁻⁷ A/cm² at 1 MV/cm.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The improvement is greater for Ta₂O₅. PE-ALD reduces the leakage current by approximately two orders of magnitude for Ta₂O₅ (from ~6×10⁻⁵ to ~8×10⁻⁷ A/cm²), whereas for TiO₂ the reduction is less than one order of magnitude (from ~5×10⁻³ to ~7×10⁻⁴ A/cm²).\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":672,"height":435},{"panel_id":"b","x":1,"y":436,"width":670,"height":511}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/W. J. Maeng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":678,"height":953,"image_format":"jpeg","image_sha256":"a96d4db318206463e79cf7b97d58885b42b7cae1e73313bdcb06fc5c9cf3097d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_34_figure_1.jpg","caption":"Figure 1. Film thickness as function of number of cycles measured by in situ spectroscopic ellipsometry for ALD of Li-containing films using LiHMDS combined various coreactants at a table temperature of $200^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/34/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/34/figure_1","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a multiple -line chart showing the film thickness growth as a function of ALD cycle number for different oxidant/reactant chemistries. The growth rates vary significantly depending on the species used: H₂O exhibits the highest growth rate, followed by H₂* + O₂*, then O₂* + H₂*, and finally O₂* alone, which shows the slowest growth. The chart highlights how the choice of oxidant or co-reactant can strongly influence the cumulative thickness achieved over the same number of ALD cycles..\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle | O₂* (nm) | H₂O (nm) | H₂* + O₂* (nm) | O₂* + H₂* (nm) |\\n|-------|----------|----------|----------------|----------------|\\n| 0 | 0 | 0 | 0 | 0 |\\n| 50 | 10 | 30 | 20 | 15 |\\n| 100 | 20 | 60 | 40 | 30 |\\n| 150 | 30 | 90 | 60 | 45 |\\n| 200 | 40 | 120 | 80 | 60 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The faster and steeper thickness increase observed for H₂O compared to O₂* implies that H₂O is significantly more reactive or efficient as an oxidant in this ALD process. This could be due to more favorable surface reactions, faster ligand removal, or a more complete reaction per cycle. In contrast, O₂* likely leads to slower surface reactions, incomplete ligand removal, or passivation effects that limit the growth per cycle. This highlights the importance of selecting appropriate co-reactants for achieving desired film thickness and deposition rates.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"60 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"O₂*, O₂* + H₂*, H₂* + O₂*, H₂O\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":570,"height":428}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/M. J. Pieters et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":570,"height":428,"image_format":"jpeg","image_sha256":"ced65fee56d9edc144257e3ba2f39e53a3aea9ec59cb0ea477100947b978045f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_34_figure_3.jpg","caption":"Figure 3. (a) Time-resolved QMS data of selected $m / z$ values during the LiHMDS $+\\mathrm{H}_2\\mathrm{O}$ process. The standard ALD recipe (SR) at the start and end of the deposition, corresponding to the slow and fast growth regimes (earlier defined in Figure 1) respectively, are compared to the recipe with only $\\mathrm{H}_2\\mathrm{O}$ and the recipe with only LiHMDS. Zooms of the HMDS-related signals of $m / z = 15$ amu (b) and 146 amu (c) during the LiHMDS dose step.","id":"train/atomic-layer-deposition/experimental-usecase/34/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/34/figure_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents ion current traces for various species monitored during sequential pulsing of LiHMDS and H₂O in an ALD process. Subfigure (a) shows the evolution of ion signals for multiple mass fragments (e.g., CH₃⁺, H₂O⁺, NH(SiMe₃)₂⁺) across time and marks key events such as precursor pulses and surface reaction (SR) start and end times. Subfigures (b) and (c) zoom in on the time-resolved ion currents for specific m/z values (15 and 146), further detailing the temporal behavior of key reaction byproducts during the LiHMDS pulse. Together, the data provide insight into precursor decomposition and reaction dynamics on the surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | LiHMDS | SR start | H₂O | SR end |\\n|----------|--------|----------|-----|--------|\\n| 0 | 1E-12 | 1E-12 | 1E-12| 1E-12 |\\n| 5 | 1E-11 | 1E-11 | 1E-11| 1E-11 |\\n| 10 | 1E-12 | 1E-12 | 1E-12| 1E-12 |\\n| 15 | 1E-12 | 1E-12 | 1E-12| 1E-12 |\\n| 20 | 1E-12 | 1E-12 | 1E-12| 1E-12 |\\n| 25 | 1E-12 | 1E-12 | 1E-12| 1E-12 |\\n| 30 | 1E-12 | 1E-12 | 1E-12| 1E-12 |\\n| 75 | 1E-12 | 1E-12 | 1E-12| 1E-12 |\\n| 80 | 1E-12 | 1E-12 | 1E-12| 1E-12 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Ion current (A) |\\n|----------|-----------------|\\n| 0 | 1E-11 |\\n| 2 | 1E-10 |\\n| 4 | 1E-10 |\\n| 6 | 1E-10 |\\n| 8 | 1E-10 |\"},{\"panel_id\":\"c\",\"text\":\"| Time (s) | Ion current (A) |\\n|----------|-----------------|\\n| 0 | 1E-11 |\\n| 2 | 1E-10 |\\n| 4 | 1E-10 |\\n| 6 | 1E-10 |\\n| 8 | 1E-10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ion current profiles reveal the presence and intensity of specific species over time, corresponding to precursor introduction and reaction phases. In subfigure (a), CH₃⁺ and NH(SiMe₃)₂⁺ signals spike during the LiHMDS pulse, suggesting the release of ligand fragments due to surface reactions. The H₂O⁺ signal increases during the water pulse, indicating oxidant introduction. The timing of signal changes at SR start and SR end further supports surface-limited reactions consistent with ALD. Subfigures (b) and (c) confirm this by showing that key mass fragments peak during the precursor pulse, then decay rapidly, demonstrating self-limiting behavior and supporting the controlled nature of ALD chemistry.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approx. 5 seconds.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"CH₃⁺ (m/z = 15), H₂O⁺ (m/z = 18), NH(SiMe₃)₂⁺ (m/z = 146)\"}]}]","bbox":[{"panel_id":"a","x":1,"y":1,"width":595,"height":545},{"panel_id":"b","x":656,"y":3,"width":477,"height":260},{"panel_id":"c","x":661,"y":294,"width":472,"height":253}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/M. J. Pieters et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1136,"height":547,"image_format":"jpeg","image_sha256":"b20ed1b0bec210bf177c39e0b53b230e53c8de218d48f162b045e714118452af","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_34_figure_5.jpg","caption":"Figure 5. Time-resolved QMS data of selected $m / z$ values during the LiHMDS $+\\mathrm{O}_2^*$ process. The standard ALD recipe (SR, red) is compared to the recipe with only $\\mathrm{O}_2^*$ (blue) and the recipe with LiHMDS and $\\mathrm{O}_2$ gas (black).","id":"train/atomic-layer-deposition/experimental-usecase/34/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/34/figure_5","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents time-resolved mass spectrometry data for various reaction by-products during exposure to LiHMDS, O₂ plasma (O₂*), and the surface reaction (SR) step. The top four subplots show ion current intensity for species including H₂O⁺ (m/z=18), SiH₃⁺ (m/z=30), CO₂⁺ (m/z=44), and HNSi₂Me₃⁺ (m/z=146), with clear changes occurring after precursor and plasma exposure. CO₂ and H₂O peaks intensify during the SR period, consistent with ligand combustion, while HNSi₂Me₃⁺ appears following LiHMDS exposure, reflecting gas-phase fragmentation of unreacted precursor. The bottom panel tracks chamber pressure, showing correlation between dose timing and ion evolution. These measurements collectively map the dynamic release of volatile by-products during an ALD half-cycle..\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | LiHMDS (A) | O₂* (A) | SR (A) |\\n|----------|------------|---------|--------|\\n| 0 | 1.5E-12 | 1.5E-12 | 1.5E-12 |\\n| 5 | 1.6E-12 | 1.5E-12 | 1.5E-12 |\\n| 10 | 1.8E-12 | 1.5E-12 | 2.0E-12 |\\n| 15 | 2.2E-12 | 2.5E-12 | 3.0E-12 |\\n| 20 | 1.8E-12 | 3.5E-12 | 2.8E-12 |\\n| 25 | 1.5E-12 | 2.2E-12 | 1.7E-12 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 7 seconds, during the LiHMDS exposure phase.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"H₂O⁺ (m/z = 18), CO₂⁺ (m/z = 44), HNSi₂Me₃⁺ (m/z = 146)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sharp rise in CO₂⁺ and H₂O⁺ signals during the SR step indicates that combustion of organic ligands is occurring due to interaction with reactive oxygen species. These by-products are signatures of oxidative ligand removal, suggesting that the SR step is essential for fully eliminating unreacted LiHMDS residues. Understanding the timing and completeness of these signals helps in optimising precursor dosing and plasma timing to ensure efficient surface cleaning and minimal carbon incorporation in the final film , a key control parameter in ALD processes targeting high-purity oxides or nitrides\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":672,"height":905}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/M. J. Pieters et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":672,"height":905,"image_format":"jpeg","image_sha256":"cc7428746c384840e9889026dacc4e1732ab9082892714ad15e7d8e9ac45c815","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_34_figure_6.jpg","caption":"Figure 6. Time-resolved QMS data of selected $m / z$ values during the LiHMDS $+\\mathrm{O}_2^*$ $+\\mathrm{H}_2^*$ process. The standard ALD recipe (SR) at the start and end of the deposition, corresponding to the slow and fast growth regimes respectively, are compared to the recipes with only LiHMDS, only $\\mathrm{O}_2^*$ $+\\mathrm{H}_2^*$ only LiHMDS $+\\mathrm{H}_2^*$ and only LiHMDS $+\\mathrm{O}_2^*$ .","id":"train/atomic-layer-deposition/experimental-usecase/34/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/34/figure_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents ion current versus time data across several subplots, each tracking a different species (e.g., H₂O⁺, SiH₃⁺, CO₂⁺, HNSi₂Me₃⁺) detected by mass spectrometry at their respective m/z values. Different reactant conditions, such as LiHMDS alone, and combinations with O₂* and H₂*, are compared to observe how plasma and precursor combinations influence gaseous by-product formation. For example, the H₂O⁺ signal peaks during exposure to O₂*, indicating oxidative ligand removal, while HNSi₂Me₃⁺ signals provide evidence of volatile organosilicon fragments. The pressure trace at the bottom confirms timing of reagent pulses and surface reactions (SR), validating the synchrony of signal changes with process steps\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | LiHMDS (m/z=18) | O₂* (m/z=30) | H₂* (m/z=44) | H₂O (m/z=146) |\\n|----------|------------------|--------------|--------------|----------------|\\n| 0 | 1E-10 | 1E-11 | 1E-12 | 1E-12 |\\n| 10 | 1.2E-10 | 1.1E-11 | 1.3E-12 | 1.2E-12 |\\n| 20 | 1.5E-10 | 1.4E-11 | 1.6E-12 | 1.8E-12 |\\n| 30 | 1.3E-10 | 1.3E-11 | 1.4E-12 | 1.5E-12 |\\n| 40 | 1.1E-10 | 1.2E-11 | 1.2E-12 | 1.3E-12 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 20 seconds.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SiH₃⁺ (m/z = 30), CO₂⁺ (m/z = 44), and HNSi₂Me₃⁺ (m/z = 146)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ion current trends suggest that ligand combustion and surface reactions are being actively driven during the LiHMDS + O₂* + H₂* exposure. The sharp rise in H₂O⁺ indicates oxidative ligand breakdown, possibly of methyl or HMDS groups. Concurrent increases in CO₂⁺ and HNSi₂Me₃⁺ imply that both organic and silicon-containing fragments are released as volatile by-products. The sequential timing and magnitude of these signals can guide optimization of ALD cycle parameters, such as plasma duration and purge steps, to ensure complete removal of precursor residues and maximise film purity. This is particularly important when designing ALD processes for sensitive electronics, where residual ligands can impair dielectric or conductive properties.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":666,"height":862}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/M. J. Pieters et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":666,"height":862,"image_format":"jpeg","image_sha256":"1519884a28622b3d034d2793afb139b84a0714f5d65df32101039ad5c9224ddc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_34_figure_7.jpg","caption":"Figure 7. Time-resolved QMS data of selected $m / z$ values during the $\\mathrm{LiHMDS} + \\mathrm{H}_2^* +\\mathrm{O}_2^*$ process. The standard ALD recipe (SR) at the start and end of the deposition, corresponding to the slow and fast growth regimes respectively, are compared to the recipes with only LiHMDS, only $\\mathrm{O}_2^* +\\mathrm{H}_2^*$ , only $\\mathrm{LiHMDS} + \\mathrm{H}_2^*$ and only $\\mathrm{LiHMDS} + \\mathrm{O}_2^*$ .","id":"train/atomic-layer-deposition/experimental-usecase/34/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/34/figure_7","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents time-resolved quadrupole mass spectrometry (QMS) data tracking the evolution of several ion fragments (e.g., CH₃⁺, H₂O⁺, SiH₂⁺, CO₂⁺, HNSi₂Me₅⁺) under sequential exposure to LiHMDS, hydrogen plasma (H₂*), oxygen plasma (O₂*), and combined steps in an ALD process. Notably, the CH₃⁺ and HNSi₂Me₅⁺ signals are elevated during LiHMDS dosing, consistent with precursor fragmentation. H₂O⁺ and CO₂⁺ peaks emerge during SR phases involving oxidants, suggesting combustion of ligands. The pressure trace shows dosing windows for each reactant and aligns with corresponding ion signal surges. Together, these data elucidate the chemical pathways of ligand decomposition and by-product release across plasma-activated ALD cycles\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | LiHMDS (A) | LiHMDS+H₂* (A) | H₂*+O₂* (A) | LiHMDS+O₂* (A) | SR end (A) |\\n|----------|-------------|----------------|-------------|----------------|------------|\\n| 0 | 9.5E-11 | 9.5E-11 | 9.5E-11 | 9.5E-11 | 9.5E-11 |\\n| 5 | 1.1E-10 | 1.1E-10 | 1.1E-10 | 1.1E-10 | 1.1E-10 |\\n| 10 | 1.0E-10 | 1.0E-10 | 1.0E-10 | 1.0E-10 | 1.0E-10 |\\n| 15 | 9.0E-11 | 9.0E-11 | 9.2E-11 | 9.0E-11 | 9.0E-11 |\\n| 20 | 1.2E-10 | 1.1E-10 | 1.3E-10 | 1.2E-10 | 1.2E-10 |\\n| 25 | 8.5E-11 | 9.0E-11 | 1.1E-10 | 9.5E-11 | 9.0E-11 |\\n| 30 | 6.5E-11 | 7.5E-11 | 9.0E-11 | 7.0E-11 | 7.0E-11 |\\n| 35 | 5.0E-11 | 6.0E-11 | 8.0E-11 | 6.0E-11 | 6.0E-11 |\\n| 40 | 3.5E-11 | 4.0E-11 | 6.5E-11 | 4.5E-11 | 4.5E-11 |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Pressure (mTorr) |\\n|----------|------------------|\\n| 0 | 0 |\\n| 5 | 50 |\\n| 10 | 120 |\\n| 15 | 50 |\\n| 20 | 0 |\\n| 25 | 50 |\\n| 30 | 100 |\\n| 35 | 50 |\\n| 40 | 0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The rise in CO₂⁺ during the SR period following O₂* exposure suggests effective combustion of organic ligands from the LiHMDS precursor, implying that oxidative plasma plays a key role in removing residual carbonaceous species. Meanwhile, HNSi₂Me₅⁺ signals peaking during the LiHMDS step indicate gas-phase fragmentation rather than surface retention. The differing behaviors underscore the sequential decomposition of ligands and highlight the importance of synchronizing plasma exposure to ensure full ligand removal.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 120 mTorr.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"H₂O⁺ (m/z=18), CO₂⁺ (m/z=44), and CH₃⁺ (m/z=15)\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":666,"height":796},{"panel_id":"b","x":4,"y":796,"width":664,"height":190}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/M. J. Pieters et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":670,"height":991,"image_format":"jpeg","image_sha256":"3cd0e5563920b1ba0f26f131c8f90aa436129da192d53423c3bfc246612efbb9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_36_fig_12.jpg","caption":"Fig. 12 a Normalized values of $S_{ID} / I_{ID}^{2}$ plotted at various values of $(V_{GS} - V_{th})$ ; b Hooge's coefficient $(a_{\\parallel})$ plotted with respect to $(V_{GS} - V_{th})$ for the conventional HEMT and the $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ MOS-HEMT","id":"train/atomic-layer-deposition/experimental-usecase/36/fig_12","sample_id":"atomic-layer-deposition/experimental-usecase/36/fig_12","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"},{"panel_id":"e","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multiple line chart displaying the relationship between frequency and Sid/ID for Ni/Au and MOS at V_GS=0.4.\"},{\"panel_id\":\"b\",\"text\":\"Multiple line chart displaying the relationship between frequency and Sid/ID for Ni/Au and MOS at V_GS=0.6.\"},{\"panel_id\":\"c\",\"text\":\"Multiple line chart displaying the relationship between frequency and Sid/ID for Ni/Au and MOS at V_GS=0.8.\"},{\"panel_id\":\"d\",\"text\":\"Multiple line chart displaying the relationship between frequency and Sid/ID for Ni/Au and MOS at V_GS=01.\"},{\"panel_id\":\"e\",\"text\":\"Scatter plot showing the relationship between VGS-Vth and Hooge's Parameter (αH) for Ni/Au-HEMT and Ga2O3 MOS-HEMT.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Frequency (Hz) | Ni/Au | MOS |\\n| --- | --- | --- |\\n| 10^2 | 10^-10 | 9*10^-10 |\\n| 10^4 | 10^-12 | 10^-11 |\"},{\"panel_id\":\"b\",\"text\":\"| Frequency (Hz) | Ni/Au | MOS |\\n| --- | --- | --- |\\n| 10^2 | 10^-10 | 9*10^-10 |\\n| 10^4 | 10^-12 | 10^-11 |\"},{\"panel_id\":\"c\",\"text\":\"| Frequency (Hz) | Ni/Au | MOS |\\n| --- | --- | --- |\\n| 10^2 | 9*10^-10 | 9*10^-11 |\\n| 10^4 | 10^-13 | 9^-13 |\"},{\"panel_id\":\"d\",\"text\":\"| Frequency (Hz) | Ni/Au | MOS |\\n| --- | --- | --- |\\n| 10^2 | 10^-11 | 10^-11 |\\n| 10^4 | 4-10^-13 | 9*10^-12 |\"},{\"panel_id\":\"e\",\"text\":\"| VGS-Vth (V) | Ni/Au-HEMT | Ga2O3 MOS-HEMT |\\n| --- | --- | --- |\\n| 0.2 | 8*10^-1 | 7*10^-2 |\\n| 0.4 | 10^-2 | 9*10^-2 |\\n| 0.6 | 9*10^-1 | 3*10^-3 |\\n| 0.8 | 4*10^-2 | 10^-3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the frequency increases, the S_iD/I_d ratio decreases for both the Ni/Au and the MOS curves.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Ni/Au sample.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"100 Hz.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The S_iD/I_d ratio decreases when the difference increases from 0.4 to 1.\"}]}]","bbox":[{"panel_id":"a","x":7,"y":31,"width":409,"height":567},{"panel_id":"b","x":410,"y":28,"width":299,"height":571},{"panel_id":"c","x":708,"y":35,"width":302,"height":558},{"panel_id":"d","x":1006,"y":37,"width":304,"height":557},{"panel_id":"e","x":312,"y":637,"width":737,"height":478}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/Huan-Yu Shih et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1317,"height":1119,"image_format":"jpeg","image_sha256":"65e3f21e9cb75c06f4fe1b3b889c72b0bbc95117f8c02c188ea641338eaefee5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_36_fig_3.jpg","caption":"Fig. 3 a Growth rate of the $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ thin films plotted with respect to the TEG pulse time and plasma time. b Film thickness plotted with respect to the number of applied ALD cycles","id":"train/atomic-layer-deposition/experimental-usecase/36/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/36/fig_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the growth rate vs plasma time and the growth rate vs TEG pulse time. The growth rate of a material increases with increasing TEG pulse time and plasma time up to a certain point and then plateaus.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the thickness as a function of the number of ALD cycles. The thickness of a material increases linearly with the number of ALD cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TEG pulse time | Growth rate | Plasma time | Growth rate |\\n| --- | --- | --- | --- |\\n| 0.00 | 0.015 | 0 | 0.016 |\\n| 0.05 | 0.06 | 5 | 0.06 |\\n| 0.10 | 0.06 | 10 | 0.06 |\\n| 0.20 | 0.06 | 20 | 0.06 |\"},{\"panel_id\":\"b\",\"text\":\"| ALD cycle (number) | Thickness (nm) |\\n| --- | --- |\\n| 0 | 0 |\\n| 100 | 7 |\\n| 200 | 13 |\\n| 300 | 17 |\\n| 400 | 25 |\\n| 600 | 35 |\\n| 700 | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TEG and O2 plasma.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After 5 s of plasma exposure.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film thickness increases with the number of ALD cycles, in accordance with the ALD process.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":17,"y":22,"width":642,"height":533},{"panel_id":"b","x":669,"y":80,"width":649,"height":472}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/Huan-Yu Shih et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1319,"height":556,"image_format":"jpeg","image_sha256":"ae4675d5002450c8cc5998bc7497f26f2fe800b17762f8f80f8e6577f6ad7aa9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_figure_2.jpg","caption":"Figure 2. Elemental depth profiles of the samples with increasing number of $\\mathrm{LiO}^{\\prime}\\mathrm{Bu} - \\mathrm{H}_{2}\\mathrm{O}$ cycles.","id":"train/atomic-layer-deposition/experimental-usecase/38/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/38/figure_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"},{"panel_id":"e","label":"multiple line chart"},{"panel_id":"f","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The depth profile shows oxygen and manganese dominating the near-surface region of the MnO₂ film. Both elements remain fairly constant through most of the film thickness. Silicon rises sharply beyond ~1500 ×10¹⁵ at/cm², marking the substrate interface. No lithium is detected in this pristine sample.\"},{\"panel_id\":\"b\",\"text\":\"After 10 LiO′Bu–H₂O cycles, a small lithium signal appears near the surface. Oxygen and manganese profiles remain similar to pristine MnO₂. Lithium does not penetrate deeply and drops to zero before the Si interface. This suggests early-stage, surface-limited lithiation.\"},{\"panel_id\":\"c\",\"text\":\"With 50 cycles, lithium concentration increases and extends further into the film. The Li profile is still higher near the surface but now reaches deeper compared to 10 cycles. Mn and O remain stable within the film region. The MnO₂ framework appears preserved.\"},{\"panel_id\":\"d\",\"text\":\"At 100 cycles, lithium is clearly incorporated throughout most of the MnO₂ layer. The Li profile becomes flatter inside the film before dropping near the Si interface. Oxygen and manganese concentrations remain relatively unchanged. This indicates a transition toward bulk lithiation.\"},{\"panel_id\":\"e\",\"text\":\"The lithium signal strengthens further and becomes more uniform across the film thickness. Only a slight decrease is seen near the interface region. Mn and O profiles still show no major disruption. Lithiation is no longer confined to the surface.\"},{\"panel_id\":\"f\",\"text\":\"After 300 cycles, lithium shows a high and nearly constant concentration throughout the film. The Li profile closely tracks the MnO₂ layer thickness. Oxygen and manganese remain stable until the Si interface. This panel reflects fully developed bulk lithiation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Depth (×10^15 at/cm^2) | O (at.%) | Mn (at.%) | Si (at.%) | Li (at.%) |\\n|---|---|---|---|---|\\n| 0 | ~0 | ~0 | ~0 | ~0 |\\n| 200 | ~60 | ~38 | ~0 | ~0 |\\n| 500 | ~62 | ~36 | ~0 | ~0 |\\n| 1000 | ~62 | ~34 | ~0 | ~0 |\\n| 1400 | ~55 | ~25 | ~10 | ~0 |\\n| 1600 | ~10 | ~5 | ~80 | ~0 |\\n| 2000 | ~0 | ~0 | ~98 | ~0 |\\n| 2500 | ~0 | ~0 | ~100 | ~0 |\"},{\"panel_id\":\"b\",\"text\":\"| Depth (×10^15 at/cm^2) | O (at.%) | Mn (at.%) | Si (at.%) | Li (at.%) |\\n|---|---|---|---|---|\\n| 0 | ~0 | ~0 | ~0 | ~0 |\\n| 200 | ~60 | ~38 | ~0 | ~1 |\\n| 500 | ~60 | ~36 | ~0 | ~1 |\\n| 1000 | ~58 | ~33 | ~0 | ~1 |\\n| 1400 | ~40 | ~18 | ~20 | ~0 |\\n| 1600 | ~5 | ~2 | ~90 | ~0 |\\n| 2000 | ~0 | ~0 | ~98 | ~0 |\\n| 2500 | ~0 | ~0 | ~100 | ~0 |\"},{\"panel_id\":\"c\",\"text\":\"| Depth (×10^15 at/cm^2) | O (at.%) | Mn (at.%) | Si (at.%) | Li (at.%) |\\n|---|---|---|---|---|\\n| 0 | ~0 | ~0 | ~0 | ~0 |\\n| 200 | ~60 | ~38 | ~0 | ~3 |\\n| 500 | ~60 | ~36 | ~0 | ~3 |\\n| 1000 | ~58 | ~34 | ~0 | ~2 |\\n| 1400 | ~35 | ~15 | ~25 | ~0 |\\n| 1600 | ~5 | ~2 | ~92 | ~0 |\\n| 2000 | ~0 | ~0 | ~98 | ~0 |\\n| 2500 | ~0 | ~0 | ~100 | ~0 |\"},{\"panel_id\":\"d\",\"text\":\"| Depth (×10^15 at/cm^2) | O (at.%) | Mn (at.%) | Si (at.%) | Li (at.%) |\\n|---|---|---|---|---|\\n| 0 | ~0 | ~0 | ~0 | ~0 |\\n| 200 | ~58 | ~36 | ~0 | ~5 |\\n| 500 | ~60 | ~36 | ~0 | ~4 |\\n| 1000 | ~58 | ~33 | ~0 | ~2 |\\n| 1300 | ~45 | ~20 | ~10 | ~0 |\\n| 1500 | ~10 | ~5 | ~80 | ~0 |\\n| 2000 | ~0 | ~0 | ~98 | ~0 |\\n| 2500 | ~0 | ~0 | ~100 | ~0 |\"},{\"panel_id\":\"e\",\"text\":\"| Depth (×10^15 at/cm^2) | O (at.%) | Mn (at.%) | Si (at.%) | Li (at.%) |\\n|---|---|---|---|---|\\n| 0 | ~0 | ~0 | ~0 | ~0 |\\n| 200 | ~55 | ~34 | ~0 | ~10 |\\n| 500 | ~56 | ~32 | ~0 | ~11 |\\n| 1000 | ~56 | ~30 | ~0 | ~9 |\\n| 1400 | ~40 | ~15 | ~15 | ~2 |\\n| 1600 | ~5 | ~2 | ~92 | ~0 |\\n| 2000 | ~0 | ~0 | ~98 | ~0 |\\n| 2500 | ~0 | ~0 | ~100 | ~0 |\"},{\"panel_id\":\"f\",\"text\":\"| Depth (×10^15 at/cm^2) | O (at.%) | Mn (at.%) | Si (at.%) | Li (at.%) |\\n|---|---|---|---|---|\\n| 0 | ~0 | ~0 | ~0 | ~0 |\\n| 200 | ~52 | ~28 | ~0 | ~15 |\\n| 500 | ~52 | ~28 | ~0 | ~16 |\\n| 1000 | ~52 | ~27 | ~0 | ~13 |\\n| 1400 | ~35 | ~12 | ~20 | ~4 |\\n| 1600 | ~5 | ~2 | ~92 | ~0 |\\n| 2000 | ~0 | ~0 | ~98 | ~0 |\\n| 2500 | ~0 | ~0 | ~100 | ~0 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It can be observed that, as the concentration of Li increases, Li can be found deeper in the sample.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The oxygen concentration remains approximately the same for all the samples and it can be found at depths of 1500-2000 x 10^15 at/cm^2.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"No lithiation in pristine MnO₂, Surface-limited lithiation at low cycle numbers (10c–100c), Homogeneous lithiation throughout the film at high cycle numbers (200c–300c)\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface-localized lithium signal suggests that lithium incorporation is favored near the film surface rather than uniformly throughout the bulk. This behavior is consistent with surface-limited incorporation or post-deposition modification effects, rather than bulk diffusion during growth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Only the surface of the film is lithiated. The depth profile shows, that lithium concentration peaks near the surface and drops to neglibly low values at approx. 500x10^15 at/cm². On the other hand, the manganese and oxygene signals extend much deeper (approx. 1500 x10^15 at/cm²), indicating that the bulk of the film consists of pure manganese oxide.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lithium in the top layer rises from 0.6 at.% (10c) to 3.2 at.% (50c) to 9.6 at.% (100c). After 300 cycles, the film becomes stoichiometric LiMn₂O₄.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 50 cycles, lithium penetrates deeper into the MnO₂ film compared to 10 cycles. While the concentration remains highest near the surface, the Li signal now extends further toward the film interior. This reflects a progression from surface-limited to partial bulk lithiation.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It can be observed that, as the concentration of Li increases, Li can be found deeper in the sample.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The oxygen concentration remains approximately the same for all the samples and it can be found at depths of 1500-2000 x 10^15 at/cm^2.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 300cLi-MnO2.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is relatively homogeneous, reaching a concentration of around15 at%. Furthermore, it can be found throughout the bulk of the material.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At low cycle numbers (10-50), lithium penetrates only the surface region. At 100 cycles, Li reaches ~50% of the film depth. Above 100 cycles (200-300), lithium distributes throughout the entire film thickness, enabling stoichiometric LiMn₂O₄ formation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Enables uniform electrochemical activity\\n-Reduces concentration gradients\\n-Improves cycling stability\\n-Enhances charge transport consistency\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The lithium is not evely distributed. Deeper in the film there is less lithium, this could be due to a nucleation delay.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It can be observed that, as the concentration of Li increases, Li can be found deeper in the sample.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The oxygen concentration remains approximately the same for all the samples and it can be found at depths of 1500-2000 x 10^15 at/cm^2.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is relatively homogeneous, reaching a concentration of around15 at%. Furthermore, it can be found throughout the bulk of the material.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 1500 x10^15 at/cm².\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It can be observed that, as the concentration of Li increases, Li can be found deeper in the sample.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The oxygen concentration remains approximately the same for all the samples and it can be found at depths of 1500-2000 x 10^15 at/cm^2.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Homogeneous lithium distribution ensures uniform conversion of MnO₂ into stoichiometric LiMn₂O₄, which is essential for stable electrochemical performance and reproducible material properties.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Oxygen.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In the samples 200cLi−MnO2 and 300cLi−MnO2, lithium is observed to penetrate throughout the whole film thickness.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Partial lithiation creates a layered structure with only the surface enriched in Li. Full lithiation produces a uniform bulk composition. This homogeneity improves mechanical and electrochemical stability.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Depth profiles show very low impurity levels. High purity minimizes side reactions, improves cycling stability, and is essential for achieving high performance and long life in battery cathodes.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At x ≈ 0.5 in LiₓMn₂O₄ (~100 cycles), the crystal structure transforms from tetragonal β-MnO₂ to cubic spinel. The spinel structure has 3D Li⁺ diffusion pathways, enabling lithium to migrate throughout the film rather than being confined to surface channels.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The deposition is performed on a silicon wafer, based on the high silicon contant deeper in the sample. It is likely that the starting surface is thermal silicon oxide.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Lithium.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The depth profiles reveal that lithium is distributed only in the top part of the film in the samples 10cLi−MnO2, 50cLi−MnO2, and 100cLi−MnO2, that is, when the average composition of the material is LixMn2O4, x ≤ 0.5. In the lithiated top parts of the films in these samples, the lithium concentrations were 0.6, 3.2, and 9.6 at. %, respectively.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A weak lithium signal appears near the surface but does not penetrate deeply.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It can be observed that, as the concentration of Li increases, Li can be found deeper in the sample.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The oxygen concentration remains approximately the same for all the samples and it can be found at depths of 1500-2000 x 10^15 at/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There is no lithium incorporation for 10 cycles of lithium deposition, this indicates that there is a delay.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It can be observed that, as the concentration of Li increases, Li can be found deeper in the sample.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The oxygen concentration remains approximately the same for all the samples and it can be found at depths of 1500-2000 x 10^15 at/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the number of LiOtBu–H₂O cycles progressively enhances lithium incorporation into the MnO₂ films. At low cycle numbers, lithium is confined to the near-surface region, while higher cycle numbers enable lithium to penetrate deeper into the film. At 200 and 300 cycles, lithium is distributed throughout the entire film thickness, indicating complete and homogeneous gas-phase lithiation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Across all samples, oxygen and manganese show relatively stable concentration profiles through most of the film thickness, while lithium is more concentrated near the surface and decreases with depth. Silicon concentration increases toward the interface region, indicating proximity to the substrate. The overall depth-dependent trends are similar between samples, with differences primarily in the relative prominence of the lithium signal.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~1:2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"33:66.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.6, 3.2 and 9.6 at.% Li, respectively.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The depth profiles show that at low cycle numbers (10-100 cycles), lithium remains confined to the upper layers of the MnO2 film. This results in compositions of LixMn2O4 with x < 0.5, where the lithium concentrations in the surface region are 0.6-9.6 at.%, depending on cycle count. At higher cycle numbers, specifically 200 and 300 cycles, lithium penetrates through the entire film, indicating complete lithiation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The depth profiles correspond to the following samples\\na. MnO2\\nb. 10cLi-MnO2\\nc. 50cLi-MnO2\\nd. 100cLi-MnO2\\ne. 200cLi-MnO2\\nf. 300cLi-MnO2\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lithium is initially confined to the surface region after 10–100 cycles. It gradually penetrates deeper, achieving full, homogeneous distribution throughout the entire film after 200–300 cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Si signal marks the interface between the MnO₂/LiₓMn₂O₄ film and the Si(100) substrate.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Time-of-flight elastic recoil detection analysis (TOF-ERDA) using ⁷⁹Br⁷⁺ ions from a 5 MV tandem accelerator.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Oxygen and manganese dominate the near-surface region.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The data suggests that the ratio of Mn:O is not 1:2. This means that the film is a mixture of MnO2 and Mn2O3.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":327,"height":308},{"panel_id":"b","x":329,"y":5,"width":327,"height":319},{"panel_id":"c","x":667,"y":5,"width":312,"height":314},{"panel_id":"d","x":11,"y":372,"width":313,"height":300},{"panel_id":"e","x":347,"y":367,"width":311,"height":305},{"panel_id":"f","x":685,"y":366,"width":293,"height":308}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":983,"height":675,"image_format":"jpeg","image_sha256":"b6b42c35d58106cd65fea698f87aa2f56e6be58ad6e5f7f7fa696ac4ccb8513d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_4_fig_2.jpg","caption":"Fig. 2. Thickness profile of selected $\\mathrm{HfO_2}$ films grown from $\\mathrm{Hf[N(CH_3) - }$ $(\\mathrm{C}_2\\mathrm{H}_5)]_4$ and $\\mathrm{H}_2\\mathrm{O}$ on borosilicate glass substrates. Growth temperatures and numbers of growth cycles applied are indicated by labels. Thicknesses are measured at variable distance from the leading edge of the substrate, which is the edge closest to the precursor inlet.","id":"train/atomic-layer-deposition/experimental-usecase/4/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/4/fig_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the thickness of HfO₂ film as a function of distance from the leading edge at various growth temperatures and cycle counts.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| DISTANCE FROM THE LEADING EDGE [mm] | 150 °C, 1000 cycles [nm] | 250 °C, 1500 cycles [nm] | 275 °C, 1500 cycles [nm] | 300 °C, 1500 cycles [nm] | 225 °C, 2500 cycles [nm] |\\n|---|---|---|---|---|---|\\n| 5 | 110 | 140 | 160 | 180 | 210 |\\n| 10 | 110 | 140 | 160 | 180 | 210 |\\n| 15 | 110 | 140 | 160 | 180 | 210 |\\n| 20 | 110 | 140 | 150 | 180 | 200 |\\n| 25 | 100 | 140 | 150 | 170 | 200 |\\n| 30 | 100 | 130 | 150 | 170 | 200 |\\n| 35 | 100 | 130 | 150 | 160 | 200 |\\n| 40 | 100 | 130 | 150 | 160 | 200 |\\n| 45 | 100 | 130 | 150 | 160 | 200 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"150, 225, 250, 275 and 300 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1000 cycles for 150 °C, 1500 cycles for 250, 275 and 300 °C, 2500 cycles for 225 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 5 mm, the film thickness is about 110 nm and at 45 mm, the film thickness is about 100 nm. The total change in thickness is therefore around 10 nm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The samples prepared above 250 °C have a more pronounced difference in thickness compared to the beginning and end of the leading edge. The distance from the leading edge corresponds to how close that part of the film is to the precursor inlet. It is theorised by the authors that above 250 °C, the thermal decomposition of the precursor, which happens at all temperatures, becomes more significant above that temperature. Parts of the film that are closer to the precursor inlet are therefore more likely to be thicker, leading to an additional dependency.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":633,"height":397}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":636,"height":400,"image_format":"jpeg","image_sha256":"1e3eb18cdf651c650285c8d9708c43da932dfb74f104ecf917c5c9ccf4ffd24e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_4_fig_7.jpg","caption":"Fig. 7. Concentrations of hydrogen, carbon, and nitrogen residues versus growth temperature. Lines are guides for the eye.","id":"train/atomic-layer-deposition/experimental-usecase/4/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/4/fig_7","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the concentration of hydrogen, carbon, and nitrogen at various HfO₂ growth temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HfO2 GROWTH TEMPERATURE, °C | at.% H | at.% C | at.% N |\\n|---|---|---|---|\\n| 150 | 5 | 0.5 | 0.1 |\\n| 175 | 3 | 0.8 | 0.2 |\\n| 200 | 3 | 0.6 | 0.3 |\\n| 225 | 2.5 | 0.7 | 0.4 |\\n| 250 | 2 | 0.9 | 0.5 |\\n| 275 | 2.5 | 1.1 | 0.6 |\\n| 300 | 2.5 | 1.2 | 0.7 |\\n| 325 | 5 | 1.5 | 0.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 175 and 300 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"From 275 °C on.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"250 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 2 at.%.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":556,"height":362}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":556,"height":364,"image_format":"jpeg","image_sha256":"eb750c7c36bf46b73fe6dd9abbc2afd5b1feeb03e366350cf3fe1e6365be0888","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_42_figure_1.jpg","caption":"Figure 1. Thermogravimetric analyses and evaporation rates of 1 (black) and 2 (gray) run at $10^{\\circ}\\mathrm{C / min}$ ramp rate, with $10^{\\circ}\\mathrm{C}$ increments for the stepped isotherm used to determine evaporation rate.","id":"train/atomic-layer-deposition/experimental-usecase/42/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/42/figure_1","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Thermogravimetric analyses and evaporation rates of 1 (black) and 2 (gray) run at 10 °C/min ramp rate, with 10 °C increments for the stepped isotherm used to determine evaporation rate. TGA graph shows how much mass is left as Compound 1 is heated. The black trace indicates that all of the compound vaporized cleanly starting at 91 °C, leaving 0% residue by about 150 °C.\"},{\"panel_id\":\"b\",\"text\":\"This label shows the evaporation rate (in nmoles/min) of two compounds (1 in black, 2 in gray) as temperature increases (plotted as 1/T in K⁻¹ × 10³). Both lines are straight and sloping upward,the steeper slope for Compound 1 suggests it has a higher activation energy for evaporation than Compound 2, meaning it is more temperature-sensitive.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| temperature (°C) | mass loss (%) |material |\\n|---|---|---|\\n| 50 | 100 | 1 |\\n| 50 | 100 | 2 |\\n| 100 | 98 | 1 |\\n| 100 | 98 | 2 |\\n| 150 | 92 | 1 |\\n| 150 | 92 | 2 |\\n| 200 | 0 | 1 |\\n| 200 | 20 | 2 |\\n| 250 | 0 | 1 |\\n| 250 | 18 | 2 |\\n| 300 | 0 | 1 |\\n| 300 | 17 | 2 |\\n| 350 | 0 | 1 |\\n| 350 | 15 | 2 |\"},{\"panel_id\":\"b\",\"text\":\"| temperature (1/K x10^3) | evaporation rate (nmol/min) |material |\\n|---|---|---|\\n| 2.25 | 1200 | 1 |\\n| 2.25 | 1100 | 2 |\\n| 2.3 | 1050 | 1 |\\n| 2.3 | 1030 | 2 |\\n| 2.35 | 1000 | 1 |\\n| 2.35 | 800 | 2 |\\n| 2.41 | 800 | 1 |\\n| 2.41 | 600 | 2 |\\n| 2.47 | 600 | 1 |\\n| 2.47 | 500 | 2 |\\n| 2.5 | 500 | 1 |\\n| 2.5 | 300 | 2 |\\n| 2.52 | 300 | 1 |\\n| 2.52 | 150 | 2 |\\n| 2.6 | 150 | 1 |\\n| 2.6 | 100 | 2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TGA measures how much mass is lost as a sample is subject to increased temperature. Thermogravimetric analysis (TGA) showed the onset of volatility at 91 °C and a residual mass of 0%.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Compound 1 vaporized completely with 0% residue, while Compound 2 left 7.4% solid residue, meaning it was less cleanly volatile and likely partially decomposed during heating. Since the mass of copper in 2 comprises 15.72% of the total molecular mass, this compound was possibly undergoing volatilization and decomposition over the thermal range of the TGA.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Because Compound 1’s evaporation rate changes sharply with small temperature changes (steep slope). To keep the vapor supply stable and repeatable for uniform film growth, the precursor temperature must be controlled very accurately (±1 °C or better).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Plotting against 1/T (inverse Kelvin) gives a straight line when evaporation follows the Arrhenius equation. The slope of the line tells us the activation energy for evaporation – a steeper slope (like Compound 1) means evaporation is more sensitive to temperature changes.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":1,"width":501,"height":396},{"panel_id":"b","x":491,"y":3,"width":436,"height":395}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/Coyle et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":930,"height":400,"image_format":"jpeg","image_sha256":"9b0cb07188191a4ae89c68a43ea404abc713d6e6ffa937be89db6879ebe82323","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_45_figure_1.jpg","caption":"Figure 1. (Color online) Thickness measured by in situ SE as a function of the number of cycles for the $\\mathrm{Pt}$ and $\\mathrm{PtO_2}$ ALD processes. The process conditions are listed in Table I. The starting substrate at 0 cycles was $\\mathrm{Si(100)}$ with $400 \\mathrm{nm} \\mathrm{SiO_2}$ . After 150 cycles of remote plasma ALD, the $\\mathrm{Pt}$ film growth is continued by thermal ALD.","id":"train/atomic-layer-deposition/experimental-usecase/45/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/45/figure_1","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the thickness of materials deposited using different ALD methods (Remote plasma ALD Pt, Remote plasma ALD PtO₂, and Thermal ALD Pt) as a function of the number of cycles. Thermal Pt ALD shows no growth unless applied after a Pt seed layer has been formed by remote plasma ALD. The remote plasma processes show near-linear thickness increase after a short initial nucleation period.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample ID | Deposition mode and Material | Number of cycles | Thickness (nm) | \\n|---|---|---|---|\\n| A | Thermal ALD Pt | 0 | 0 |\\n| A | Thermal ALD Pt | 50 | 0.05 |\\n| A | Thermal ALD Pt | 100 | 0.05 |\\n| A | Thermal ALD Pt | 150 | 0.05 |\\n| A | Thermal ALD Pt | 200 | 0.05 |\\n| A | Thermal ALD Pt | 250 | 0.06 |\\n| B | Remote plasma ALD PtO2| 0 | 0 |\\n| B | Remote plasma ALD PtO2| 20 | 0.08 |\\n| B | Remote plasma ALD PtO2| 30 | 0.37 |\\n| B | Remote plasma ALD PtO2| 40 | 0.77 |\\n| B | Remote plasma ALD PtO2| 50 | 1.47 |\\n| B | Remote plasma ALD PtO2| 60 | 2.47 |\\n| B | Remote plasma ALD PtO2| 130 | 4.92 |\\n| B | Remote plasma ALD PtO2| 200 | 7.76 |\\n| B | Remote plasma ALD PtO2| 250 | 9.98 |\\n| C | Remote plasma ALD Pt| 0 | 0 |\\n| C | Remote plasma ALD Pt| 20 | 0.52 |\\n| C | Remote plasma ALD Pt| 40 | 1.43 |\\n| C | Remote plasma ALD Pt| 60 | 2.99 |\\n| C | Remote plasma ALD Pt| 100 | 5.07 |\\n| C | Remote plasma ALD Pt| 150 | 7.23 |\\n| C | Thermal ALD Pt| 160 | 7.45 |\\n| C | Thermal ALD Pt| 200 | 8.97 |\\n| C | Thermal ALD Pt| 250 | 10.89 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After approximately 50 cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the plot, thermal ALD Pt on the initial surface stays essentially at zero thickness over the full cycle range, indicating little to no growth. After 150 cycles of remote plasma ALD Pt, the process is switched to thermal ALD on the same sample and the thickness then increases steadily. This contrast shows that thermal ALD Pt growth proceeds when a Pt surface (seed layer) is present, but not on the starting surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Remote plasma ALD Pt.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After roughly 50 cycles.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":607,"height":464}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":611,"height":467,"image_format":"jpeg","image_sha256":"e136f2c9af1cd0f9431b4fee3598307cd7cfa973f1ac24eef80baf5a090478c7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_11.jpg","caption":"Fig. 11. Chemical compositions of TiN ALD films measured using XPS techniques. (a) Composition vs. deposition temperature using the short reactant exposure pulse sequence. (b) Composition vs. TDMAT exposure at $180^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_11","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_11","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"As deposition temperature increases, oxygen content decreases markedly while nitrogen content increases, whereas titanium remains nearly constant, indicating improved Ti–N formation at higher temperatures. Carbon remains low and only weakly temperature dependent.\"},{\"panel_id\":\"b\",\"text\":\"Increasing TDMAT exposure at 180 °C raises oxygen content and reduces nitrogen content, while titanium stays stable, suggesting that excess precursor exposure promotes oxygen incorporation rather than additional nitridation. Overall, deposition temperature appears to be the dominant parameter governing TiN film stoichiometry.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition Temperature (°C) | O (at.%) | Ti (at.%) | N (at.%) | C (at.%) |\\n|---|---|---|---|---|\\n| ~60 | ~56 | ~31 | ~9 | ~3 |\\n| ~120 | ~44 | ~32 | ~19 | ~5 |\\n| ~180 | ~39 | ~32 | ~23 | ~5 |\\n| ~240 | ~37 | ~33 | ~28 | ~6 |\"},{\"panel_id\":\"b\",\"text\":\"| TDMAT Exposure (s) | O (at.%) | Ti (at.%) | N (at.%) | C (at.%) |\\n|---|---|---|---|---|\\n| 0 | ~40 | ~32 | ~23 | ~5 |\\n| ~20 | ~45 | ~31 | ~18 | ~6 |\\n| ~100 | ~46 | ~31 | ~17 | ~7 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Extended precursor exposure increases surface residence time of reactive species, which can promote unintended oxygen uptake. Rather than enhancing nitridation, excess exposure appears to favor impurity incorporation. This suggests saturation of Ti sites occurs early in the exposure window.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Oxygen content saturates after short TDMAT exposures and remains high at longer exposure times.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The opposing oxygen and nitrogen trends indicate competitive incorporation during growth. As temperature increases, nitrogen more effectively replaces oxygen within the film, promoting Ti–N bonding. This reflects a shift toward a more stoichiometric TiN phase.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher deposition temperatures are most favorable due to lower oxygen and higher nitrogen content.\"}]}]","bbox":[{"panel_id":"b","x":1,"y":581,"width":541,"height":564},{"panel_id":"a","x":1,"y":0,"width":541,"height":558}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":547,"height":1152,"image_format":"jpeg","image_sha256":"5402d7ed615a9506cceb32baab8e48bafce4b58a23182d8a5ef0314d519c98ca","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_12.jpg","caption":"Fig. 12. QCM mass ratios predicted for TiN ALD vs. the number of dimethylamine molecules produced during the TDMAT reaction, $x$ , and the number of dimethylamino ligands incorporated per Ti atom, $y$ .","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_12","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_12","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents predicted QCM mass ratios for TiN ALD as a function of the number of dimethylamine molecules produced during the TDMAT reaction (x). Each curve corresponds to a different number of dimethylamino ligands retained per Ti atom (y). For all values of y, the QCM mass ratio increases monotonically with x. At a fixed x, higher ligand retention shifts the curves upward, indicating larger net mass uptake. The model therefore highlights the coupled influence of byproduct formation and incomplete ligand removal on QCM signals.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| y (ligand per Ti) | x (approx. range) | QCM mass ratio R (approx.) |\\n|----------------------|-----------------------|--------------------------------------|\\n| 0.0 | ~2.7–3.0 | ~0.60–0.70 |\\n| 0.5 | ~2.1–2.9 | ~0.70–0.90 |\\n| 1.0 | ~1.6–2.7 | ~0.65–1.00 |\\n| 1.5 | ~1.3–2.4 | ~0.75–1.10 |\\n| 2.0 | ~1.0–2.0 | ~0.85–1.15 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Increased production of dimethylamine byproducts during the TDMAT reaction.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It increases the QCM mass ratio.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Retaining more dimethylamino ligands increases the mass remaining on the surface after reaction. This added mass contribution raises the predicted QCM mass ratio for any given amount of dimethylamine production.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":1,"y":1,"width":665,"height":681}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":667,"height":686,"image_format":"jpeg","image_sha256":"bc9b46e688b773052837b6135c081f2b0faa240bd2da912aa8196f53d5eac890","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_3.jpg","caption":"Fig. 3. Integrated absorbance of $\\mathrm{C - H}$ and $\\mathrm{N - H}$ stretching vibrations vs. TDMAT and $\\mathrm{NH}_3$ exposures at $152^{\\circ}\\mathrm{C}$ . (a) Third TDMAT exposure in ABAB... sequence. (b) Fourth $\\mathrm{NH}_3$ exposure in ABAB... sequence.","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure tracks surface functional group evolution during an ABAB… ALD sequence using integrated IR absorbances of C–H and N–H stretching modes at 152 °C. In panel (a), increasing TDMAT exposure causes the N–H signal to rapidly decrease toward zero while the C–H signal rises and approaches saturation, indicating that TDMAT consumption of NHx*-terminated sites is accompanied by accumulation of methyl-containing ligands on the surface.\"},{\"panel_id\":\"b\",\"text\":\"In this figure, increasing NH₃ exposure produces the opposite behavior: N–H absorbance increases and saturates while C–H absorbance decreases and levels off, consistent with NH₃-driven ligand removal and surface re-termination by NHx* species. Together, the two panels demonstrate complementary half-reactions and self-limiting surface chemistry characteristic of ALD cycling.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TDMAT Exposure (Torr·min) | C–H (integrated absorbance) | N–H (integrated absorbance) |\\n|---|---|---|\\n| 0 | ~0.23 | ~1.00 |\\n| 3 | ~0.78 | ~0.25 |\\n| 6 | ~0.88 | ~0.15 |\\n| 10 | ~0.90 | ~0.10 |\\n| 15 | ~0.94 | ~0.06 |\\n| 20 | ~0.95 | ~0.04 |\\n| 25 | ~0.98 | ~0.02 |\\n| 35 | ~1.00 | ~0.01 |\"},{\"panel_id\":\"b\",\"text\":\"| NH₃ Exposure (Torr·min) | C–H (integrated absorbance) | N–H (integrated absorbance) |\\n|---|---|---|\\n| 0 | ~1.00 | ~0.00 |\\n| 500 | ~0.45 | ~0.78 |\\n| 1000 | ~0.38 | ~0.95 |\\n| 1500 | ~0.36 | ~0.95 |\\n| 2000 | ~0.34 | ~0.85 |\\n| 3000 | ~0.34 | ~0.95 |\\n| 3500 | ~0.33 | ~0.98 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies that NH₃ effectively removes methyl-derived ligands and re-terminates the surface with NHx* species. This regeneration of reactive sites is essential for sustaining cyclic ALD growth.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Residual C–H indicates carbon-containing fragments remain on the surface, which can incorporate into the growing film as impurities. Carbon contamination can increase resistivity and degrade barrier performance, so effective NH₃ exposure is critical for high-quality TiN films.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The N–H absorbance decreases most rapidly during the initial TDMAT exposure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Saturation of the C–H signal implies that available reactive surface sites have been fully occupied by methyl-containing ligands. Additional precursor exposure does not increase adsorption, indicating complete surface coverage. This confirms self-limiting precursor chemisorption.\"}]}]","bbox":[{"panel_id":"b","x":3,"y":535,"width":505,"height":503},{"panel_id":"a","x":3,"y":6,"width":505,"height":508}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":511,"height":1042,"image_format":"jpeg","image_sha256":"56c206d3ac55af7eff76ac66f732192ac0be3aca21d16ed8d3b85c68076db0df","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_8.jpg","caption":"Fig. 8. QCM mass ratio, $R = (m_0 + m_1) / m_0$ , measured during TiN ALD using long, medium and short reactant pulse sequences at deposition temperatures of $60 - 240^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_8","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This plot shows the QCM mass ratio as a function of deposition temperature for three reactant pulse sequences. The short-pulse sequence remains lowest across the full temperature range (≈0.60 → 0.93), indicating a smaller relative contribution from the NH₃ half-cycle. The medium-pulse sequence starts high at 50 °C, dips near 90 °C, and then increases steadily to ~1.16 at 240 °C. The long-pulse sequence stays near ~0.85–0.95 up to 150 °C and then rises above unity at higher temperatures, reflecting a growing contribution from the second half-reaction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulse sequence | Deposition Temperature (°C) | QCM Mass Ratio R |\\n|---|---|---|\\n| Long (100-10-20-30) | 50 | ~0.88 |\\n| Long (100-10-20-30) | 90 | ~0.84 |\\n| Long (100-10-20-30) | 120 | ~0.84 |\\n| Long (100-10-20-30) | 150 | ~0.92 |\\n| Long (100-10-20-30) | 180 | ~1.02 |\\n| Long (100-10-20-30) | 210 | ~1.07 |\\n| Long (100-10-20-30) | 240 | ~1.11 |\\n| Medium (20-10-6-10) | 50 | ~1.06 |\\n| Medium (20-10-6-10) | 90 | ~0.86 |\\n| Medium (20-10-6-10) | 120 | ~0.88 |\\n| Medium (20-10-6-10) | 150 | ~0.98 |\\n| Medium (20-10-6-10) | 180 | ~1.08 |\\n| Medium (20-10-6-10) | 210 | ~1.14 |\\n| Medium (20-10-6-10) | 240 | ~1.16 |\\n| Short (1-0.5-1-5) | 50 | ~0.60 |\\n| Short (1-0.5-1-5) | 90 | ~0.66 |\\n| Short (1-0.5-1-5) | 120 | ~0.67 |\\n| Short (1-0.5-1-5) | 150 | ~0.70 |\\n| Short (1-0.5-1-5) | 180 | ~0.78 |\\n| Short (1-0.5-1-5) | 210 | ~0.80 |\\n| Short (1-0.5-1-5) | 240 | ~0.93 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Medium (20-10-6-10), R ≈ 1.16.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"180 °C (R ≈ 1.20)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An increasing R indicates that the net mass change after a full cycle grows relative to the precursor-only mass gain. This suggests that the NH₃ half-cycle contributes more strongly at higher temperatures, likely due to more complete ligand removal or enhanced reaction progress.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":2,"y":1,"width":663,"height":643}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":670,"height":644,"image_format":"jpeg","image_sha256":"7b1f3fe5f9a1ad9d366a84108def0591f22f5c461839c24ce72ea77b4c313574","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_5_fig_9.jpg","caption":"Fig. 9. Resistivities of TiN ALD films measured using the four-point probe for long, medium and short reactant pulse sequences at deposition temperatures of $60 - 240^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/5/fig_9","sample_id":"atomic-layer-deposition/experimental-usecase/5/fig_9","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows the electrical resistivity of TiN ALD films as a function of deposition temperature. For all pulse lengths, resistivity decreases sharply with increasing temperature. Short pulse sequences consistently yield the lowest resistivity at high temperature. Medium pulses show intermediate behavior, while long pulses retain substantially higher resistivity, especially at lower temperatures. The results indicate that both deposition temperature and pulse timing strongly influence TiN film electrical quality.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulse sequence | Deposition temperature (°C) | Resistivity (µΩ·cm) |\\n|---|---|---|\\n| Short | 60 | ~2.5×10⁷ |\\n| Short | 120 | ~5×10⁶ |\\n| Short | 180 | ~5×10⁴ |\\n| Short | 240 | ~1.5×10⁴ |\\n| Medium | 120 | ~2×10⁷ |\\n| Medium | 180 | ~3×10⁵ |\\n| Medium | 240 | ~2×10⁴ |\\n| Long | 180 | ~1×10⁷ |\\n| Long | 240 | ~3×10⁵ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The short pulse sequence.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It decreases by several orders of magnitude.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Shorter pulses limit excessive precursor exposure and reduce residual ligand incorporation in the growing film. At higher temperatures, this favors cleaner surface reactions, improved film densification, and better grain connectivity. These structural improvements reduce electron scattering and lead to lower resistivity compared with longer pulse sequences.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":656,"height":667}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/5/Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":661,"height":673,"image_format":"jpeg","image_sha256":"1900f10398e03594987ffddf0793abb20dcec6410b3927286280b01aba4d05a2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_50_fig_10.jpg","caption":"Fig. 10 Absorption coefficient $(\\alpha)$ as a function of the photon energy $(E)$ of the ALD ZnO:B films deposited at $150^{\\circ}C$ on glass substrates.","id":"train/atomic-layer-deposition/experimental-usecase/50/fig_10","sample_id":"atomic-layer-deposition/experimental-usecase/50/fig_10","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"table"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the absorption coefficient of ZnO:B as a function of photon energy E, with various doping levels (DF) indicated by different colors, it also highlights the shift in the absorption edge with increasing doping.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| DF | \\\\(\\\\alpha\\\\) \\\\((10^{3} \\\\text{ cm}^{-1})\\\\) @ 1.2 eV | n \\\\((10^{20} \\\\text{ cm}^{-3})\\\\) |\\n| --- | --- | --- |\\n| intrinsic ZnO | 0.41 | 0.13 |\\n| 0.014 | 0.79 | 1.22 |\\n| 0.016 | 0.96 | 1.79 |\\n| 0.018 | 1.50 | 2.25 |\\n| 0.027 | 1.90 | 2.25 |\\n| 0.034 | 2.60 | 3.10 |\\n| 0.053 | 2.66 | 2.70 |\\n| 0.063 | 2.18 | 1.85 |\\n| 0.075 | 1.59 | 1.34 |\\n| 0.094 | 1.39 | 1.08 |\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No. From SE data.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Clearly in the NIR region, the absorption decreases with increasing DF up to 0.034 whereas it increases again for\\nhigher DF values.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The absorption increase in NIR region with increase in doping can be attributed to the free-carrier absorption in the films as described by the Drude model\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The carrier concentration is highest at the following DF,\\n1. At DF 0.034 = 3.1\\n2. At DF 0.053 = 2.7\\nfurther increase of DF does not increase the concentration and hence this is attributed to FCA\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":531,"height":360},{"panel_id":"b","x":531,"y":34,"width":432,"height":327}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/Garcia-Alonso et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":961,"height":367,"image_format":"jpeg","image_sha256":"93c18505542a2e0043ca341569e72583ba73b9acc8aece269e02c9ac15a8c949","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_50_fig_9.jpg","caption":"Fig. 9 Transmittance of selected ZnO:B samples $(\\mathrm{DF} = 0.000 - 0.063)$ deposited at $150^{\\circ}C$ and with thicknesses of $45\\pm 5$ nm.","id":"train/atomic-layer-deposition/experimental-usecase/50/fig_9","sample_id":"atomic-layer-deposition/experimental-usecase/50/fig_9","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the transmittance of ZnO:B at different wavelengths for various doping fractions. The transmittance increases with increasing wavelength, reaching nearly 100% above 1000 nm.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | Intrinsic ZnO (%) | DF = 0.016 (%) | DF = 0.018 (%) | DF = 0.034 (%) | DF = 0.063 (%) |\\n|-----------------|--------------------|-----------------|-----------------|-----------------|-----------------|\\n| 300 | 40 | 38 | 36 | 34 | 32 |\\n| 400 | 85 | 82 | 80 | 78 | 75 |\\n| 600 | 92 | 90 | 89 | 87 | 85 |\\n| 1000 | 94 | 93 | 92 | 91 | 90 |\\n| 1500 | 95 | 94 | 93 | 92 | 91 |\\n| 2000 | 95 | 94 | 93 | 92 | 91 |\\n| 2400 | 95 | 94 | 93 | 92 | 91 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The transmittance values were over 90% in the major part of the visible region\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A decrease in transmittance was observed in the NIR region with increasing doping fraction until DF = 0.034. For higher DF values, the transmittance in the NIR increased again. This behaviour can be attributed to free-carrier absorption.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A blue shift was observed in the ultraviolet absorption edge with increasing doping concentration from intrinsic ZnO to doped ZnO:B films with a DF of 0.063. This is due to the increase of the optical band gap.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":458,"height":338}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/Garcia-Alonso et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":461,"height":344,"image_format":"jpeg","image_sha256":"30ae994cd64be7d5e94a99c6fc8202055aa4e4d77bf9e7f2fe50f5bd451f54ea","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_52_figure_5.jpg","caption":"Figure 5. The imaginary part of the dielectric function $(\\epsilon_{2})$ of the $\\mathrm{Co}_3\\mathrm{O}_4$ , $\\mathrm{Li}_2\\mathrm{CO}_3$ and $\\mathrm{LiCoO_2}$ films as determined by in situ spectroscopic ellipsometry.","id":"train/atomic-layer-deposition/experimental-usecase/52/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/52/figure_5","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The imaginary part of the dielectric function, epsilon2, is plotted versus photon energy for Co3O4, LiCoO2, and Li2CO3, as determined by in situ spectroscopic ellipsometry. Co3O4 shows the largest epsilon2 values, LiCoO2 is much lower, and Li2CO3 remains near zero across most of the range, indicating very weak contribution compared with the other films.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Photon energy (eV) | Co3O4 (epsilon_2) | LiCoO2 (epsilon_2) | Li2CO3 (epsilon_2) |\\n|---|---|---|---|\\n| 1.25 | 1.2 | 0.15 | 0.00 |\\n| 1.50 | 2.5 | 0.18 | 0.00 |\\n| 1.65 | 5.5 | 0.20 | 0.00 |\\n| 2.00 | 4.1 | 0.25 | 0.00 |\\n| 2.40 | 4.8 | 0.35 | 0.00 |\\n| 2.75 | 6.0 | 0.50 | 0.00 |\\n| 3.10 | 5.2 | 0.70 | 0.00 |\\n| 3.40 | 4.6 | 0.60 | 0.01 |\\n| 3.70 | 4.5 | 0.60 | 0.01 |\\n| 4.00 | 4.7 | 0.75 | 0.02 |\\n| 4.25 | 4.9 | 0.90 | 0.03 |\\n| 4.75 | 5.6 | 1.25 | 0.05 |\\n| 5.00 | 5.8 | 1.20 | 0.06 |\\n| 5.40 | 6.0 | 1.15 | 0.08 |\\n| 5.80 | 5.8 | 1.05 | 0.10 |\\n| 6.00 | 5.4 | 1.00 | 0.12 |\\n| 6.50 | 4.6 | 0.80 | 0.05 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"These reference spectra help distinguish which phases contribute to the optical response measured during growth. The paper notes a clear difference between the three films and uses this comparison to interpret the LiCoO2 signal. In particular, the discussion indicates that Li2CO3 contributes very little to the LiCoO2 epsilon2 spectrum under these conditions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Co3O4\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The x axis is photon energy (eV) and the y axis is the dielectric function epsilon2. Epsilon2 is the imaginary part of the dielectric function and is directly related to optical absorption in the material. Larger epsilon2 values generally indicate stronger absorption at those photon energies.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Co3O4\\n\\nLiCoO2\\n\\nLi2CO3\\nSmallest epsilon2 curve: Li2CO3\"}]}]","bbox":[{"panel_id":"a","x":1,"y":1,"width":541,"height":370}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/Donders et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":544,"height":375,"image_format":"jpeg","image_sha256":"22b61f796669c9d3188569d8f062a76ac2cae3b54b1de0134a67793ab997a19c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_52_figure_9.jpg","caption":"Figure 9. Constant current (CC) (dis)charge cycling between $3.0\\mathrm{V}$ and $4.1\\mathrm{V}$ (0.35 C-rate) for an ALD-deposited $\\mathrm{LiCoO_2}$ $(x = 4)$ film on $\\mathrm{Si / TiO_2 / Pt}$ , using $\\mathrm{LiClO_4}$ in ethylene carbonate/diethyl carbonate (EC/DEC 1/1) as liquid electrolyte. (a) (dis)charge of $\\mathrm{LiCoO_2}$ , (b) the derivative of the storage capacity with respect to the electrode potential and (c) the electrochemical storage capacity upon cycling showing data for $x = 2$ and $x = 4$ .","id":"train/atomic-layer-deposition/experimental-usecase/52/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/52/figure_9","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Constant current charge and discharge curves of an ALD LiCoO2 film (x = 4) between 3.0 V and 4.1 V versus Li/Li+, plotted as E versus Q. The paper notes an about 12% capacity loss between charge and discharge in this panel.\"},{\"panel_id\":\"b\",\"text\":\"Differential capacity dQ/dE versus E for the same cycling window, showing a clear charge transfer feature near 3.9 V that the paper associates with LiCoO2.\"},{\"panel_id\":\"c\",\"text\":\"Capacity versus cycle number comparing x = 2 and x = 4 films, showing higher capacity for x = 4 and fairly stable cycling behavior over the shown cycles, with areal capacity on the left axis and gravimetric capacity on the right axis.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Q, mAh/g | E (V) vs Li/Li⁺ (Charge) | E (V) vs Li/Li⁺ (Discharge) |\\n|---|---|---|\\n| 5 | 3.20 | 3.00 |\\n| 10 | 3.55 | 3.20 |\\n| 20 | 3.70 | 3.50 |\\n| 40 | 3.85 | 3.70 |\\n| 60 | 3.92 | 3.85 |\\n| 80 | 4.00 | 3.92 |\\n| 95 | 4.15 | 4.00 |\"},{\"panel_id\":\"b\",\"text\":\"| E (V) vs Li/Li⁺ | dQ/dE (mAh/Vg) Charge | dQ/dE (mAh/Vg) Discharge |\\n|---|---|---|\\n| 3.2 | 0 | 0 |\\n| 3.4 | 0 | 0 |\\n| 3.6 | 0.05 | -0.05 |\\n| 3.8 | 0.10 | -0.10 |\\n| 3.9 | 0.35 | -0.40 |\\n| 3.95 | 0.80 | -0.75 |\\n| 4.0 | 0.40 | -0.30 |\\n| 4.05 | 0.20 | -0.15 |\"},{\"panel_id\":\"c\",\"text\":\"| (Dis)charge cycles | Capacity Co/Li (x)=4 (μAh μm⁻¹cm⁻²) | Capacity Co/Li (x)=4 (mAh/g) | Capacity Co/Li (x)=2 (μAh μm⁻¹cm⁻²) | Capacity Co/Li (x)=2 (mAh/g) |\\n|---|---|---|---|---|\\n| 1 | 26 | 95 | 11.5 | 42 |\\n| 2 | 25.5 | 93 | 11.5 | 42 |\\n| 3 | 25 | 92 | 11.5 | 42 |\\n| 5 | 25 | 91 | 11 | 40 |\\n| 7 | 24.5 | 90 | 11 | 40 |\\n| 10 | 24.5 | 89 | 10.5 | 38 |\\n| 12 | 24 | 88 | 10 | 37 |\\n| 14 | 24 | 88 | 10 | 37 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Voltage window: 3.0 V to 4.1 V versus Li/Li+\\n\\nConstant current cycling at 0.35 C rate\\n\\nLiquid electrolyte: LiClO4 in EC/DEC 1/1\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The y axis is dQ/dE (differential capacity) and the x axis is E versus Li/Li+.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A charge transfer reaction at about 3.9 V as expected for LiCoO2.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":18,"width":624,"height":466},{"panel_id":"b","x":8,"y":487,"width":601,"height":427},{"panel_id":"c","x":3,"y":956,"width":652,"height":464}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/Donders et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":664,"height":1472,"image_format":"jpeg","image_sha256":"8d72921325c02f472d475bc813b27d5f639b96157d2fd6114f0ee7dca8703ba7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_54_figure_10.jpg","caption":"Figure 10. (Color online) Cyclic voltammetric scans at $1\\mathrm{mV / s}$ of $60~\\mathrm{nm}$ thick TaN and TiN films showing the reaction of the films toward Li ions.","id":"train/atomic-layer-deposition/experimental-usecase/54/figure_10","sample_id":"atomic-layer-deposition/experimental-usecase/54/figure_10","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows a cyclic voltammetric scan for two different materials, TaN (H₂ plasma) and TiN (H₂-N₂ 30:4 plasma), performed at 1 mV/s.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Potential (V) | Current (µA/cm²) TaN | Current (µA/cm²) TiN |\\n|---|---|---|\\n| 0.0 | -9 | -1 |\\n| 0.5 | -6 | -0.8 |\\n| 1.0 | 0 | -0.5 |\\n| 1.5 | 9 | -0.3 |\\n| 2.0 | 4 | -0.2 |\\n| 2.5 | 0 | -0.1 |\\n| 3.0 | 0 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1 mV/s.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both were 60 nm thick.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0 to 3 V.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TaN films have a much higher current density than TiN, indicating a higher reactivity toward the Li-containing electrolyte.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":0,"width":660,"height":499}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":666,"height":503,"image_format":"jpeg","image_sha256":"243c247a4e8cfc531551375547b598e4e318c8e61728a446dcb7e787e57fc199","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_54_figure_2.jpg","caption":"Figure 2. (Color online) The thickness of the TaN and TiN films as a function of number of ALD cycles. The thicknesses have been determined by in situ spectroscopic ellipsometry.","id":"train/atomic-layer-deposition/experimental-usecase/54/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/54/figure_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between the number of cycles and film thickness for TaN (H₂ plasma) and TiN (H₂-N₂ 30:4 plasma). Both materials exhibit a linear increase in film thickness with increasing cycle count.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of cycles | Film thickness (nm) TaN | Film thickness (nm) TiN |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 50 | 2.5 | 2 |\\n| 100 | 5 | 4 |\\n| 150 | 7 | 6 |\\n| 200 | 10 | 8 |\\n| 250 | 12 | 10 |\\n| 300 | 14.5 | 12 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TaN and TiN.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 7.5 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 14.5 nm.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":0,"width":653,"height":516}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":661,"height":520,"image_format":"jpeg","image_sha256":"ce2b6a506e061c8460b45cb7aeae3e6a89222ec66e860b2f4e1f637d4053d516","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_54_figure_3.jpg","caption":"Figure 3. (Color online) (a) The growth per cycle and (b) the FPP resistivity of TaN and TiN films as a function of the plasma exposure time in the ALD cycle. The lines serve as guides to the eyes.","id":"train/atomic-layer-deposition/experimental-usecase/54/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/54/figure_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure depicts the growth rate of TiN and TaN films as a function of plasma exposure time, where the growth rate of TiN plateaus after 5 seconds, but the growth rate of TaN keeps increasing after 5 seconds.\"},{\"panel_id\":\"b\",\"text\":\"The figure depicts the FPP resistivity of the TiN and TaN films as a function of plasma exposure time. The resistivity of TiN is practically constant, but the resistivity of TaN decreases exponentially as a function of plasma exposure time.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Plasma exposure time (s) | TaN (H₂ plasma) | TiN (H₂-N₂ 30:4 plasma) |\\n|---|---|---|\\n| 0 | 0.02 | 0.03 |\\n| 5 | 0.03 | 0.04 |\\n| 10 | 0.04 | 0.04 |\\n| 20 | 0.05 | 0.04 |\\n| 30 | 0.06 | 0.04 |\"},{\"panel_id\":\"b\",\"text\":\"| Plasma exposure time (s) | TaN (H₂ plasma) | TiN (H₂-N₂ 30:4 plasma) |\\n|---|---|---|\\n| 0 | 3*10^4 | 2*10^2 |\\n| 5 | 4*10^3 | 2*10^2 |\\n| 10 | 10^3 | 2*10^2 |\\n| 30 | 4*10^2 | 10^2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The growth rates for both species as a function of time increase rapidly during the first few seconds of plasma exposure. The growth rate of TiN quickly plateaus after 5 seconds of exposure, whilst the growth rate of TaN keeps increasing steadily, albeit significantly slower than the initial time exposure.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.04 nm/cycle.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3*10^4 μΩ cm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10^2 μΩ cm.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":-1,"width":675,"height":526},{"panel_id":"b","x":0,"y":535,"width":674,"height":516}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":677,"height":1050,"image_format":"jpeg","image_sha256":"3a0e0bc595cf525066846799183053b1f093cf327441f8a31876d8672e901478","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_54_figure_5.jpg","caption":"Figure 5. (Color online) The sheet resistance at $150^{\\circ}\\mathrm{C}$ of the TaN-Si, TiN-Si, Cu-TaN-Si, and Cu-TiN-Si stacks after heating to the anneal temperature indicated at the horizontal axis. The annealing temperature was increased in steps of $50^{\\circ}\\mathrm{C}$ up to a maximum temperature of $700^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/54/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/54/figure_5","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the sheet resistance at 150°C for different stack configurations (TaN-Si, TiN-Si, Cu-TaN-Si, Cu-TiN-Si) as a function of temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Sheet resistance (Ω/□) TaN-Si stack | Sheet resistance (Ω/□) TiN-Si stack | Sheet resistance (Ω/□) Cu-TaN-Si stack | Sheet resistance (Ω/□) Cu-TiN-Si stack |\\n|---|---|---|---|---|\\n| 150 | 60 | 10 | 0.2 | 0.1 |\\n| 200 | 60 | 10 | 0.2 | 0.1 |\\n| 250 | 60 | 10 | 0.2 | 0.1 |\\n| 300 | 60 | 10 | 0.2 | 0.1 |\\n| 350 | 60 | 10 | 0.2 | 0.1 |\\n| 400 | 60 | 10 | 0.2 | 0.1 |\\n| 450 | 50 | 10 | 0.2 | 0.1 |\\n| 500 | 30 | 9 | 0.2 | 0.1 |\\n| 550 | 20 | 9 | 0.2 | 0.1 |\\n| 600 | 30 | 9 | 0.2 | 0.1 |\\n| 650 | 30 | 8 | 1 | 3 |\\n| 700 | 20 | 7 | 4 | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 10 Ω/\\u0001.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 60 Ω/\\u0001.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 0.2 Ω/\\u0001.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure shows that the TaN–Si stack exhibits a noticeable reduction in sheet resistance once the annealing temperature exceeds roughly 400 °C, indicating an annealing-induced improvement in film quality and demonstrating that TaN maintains thermal stability well above its 225 °C deposition temperature. The TiN–Si stack shows a similar but weaker decrease in resistance, consistent with its higher deposition temperature of 400 °C and thus less room for annealing-driven improvements. In contrast, the Cu–TaN–Si and Cu–TiN–Si stacks initially display very low sheet resistances (approximately 0.2 and 0.1 in the units indicated on the plot), dominated by the highly conductive Cu layer. However, once annealed above about 600 °C, both Cu-containing stacks undergo a dramatic increase in sheet resistance. This sudden rise signals failure of the diffusion barrier; in other words, Cu diffuses into the underlying layers at high temperature, degrading the stack and destroying the low-resistance pathway.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":1,"width":671,"height":516}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":675,"height":519,"image_format":"jpeg","image_sha256":"29a9f3a2f7536e26eb5de2f3b3f0cd2b26102f8d9204d573d085930ac18925d3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_57_figure_3.jpg","caption":"Figure 3. (a) Transmittance spectra of a $100\\mathrm{nm}$ CsI film on sapphire and bare sapphire substrate. (b) Tauc plot of the CsI film in panel (a). The CsI film was deposited at $150^{\\circ}\\mathrm{C}$ , pulse durations were 1.5 and $0.5\\mathrm{s}$ for Cs and I precursors, respectively, and $1.0\\mathrm{s}$ purge durations.","id":"train/atomic-layer-deposition/experimental-usecase/57/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/57/figure_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the optical characterization of a 100 nm ALD-grown CsI film. The transmittance spectrum indicates that the CsI film (blue) is highly transparent (>80%) across the visible and near-infrared range (300–1100 nm), closely matching the bare sapphire substrate (black), confirming high optical quality with minimal scattering or defect-related absorption. A sharp decrease in transmittance near 225 nm marks the onset of strong fundamental absorption.\"},{\"panel_id\":\"b\",\"text\":\"The Tauc plot (𝛼ℎ𝜈)^2 vs. photon energy shows a linear region, whose extrapolation intersects the energy axis at ~5.5 eV, confirming that CsI is a wide-bandgap insulator with a direct optical bandgap of ~5.5 eV.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | Transmittance (%) | Material |\\n|----------------|-------------------|------|\\n| 200 | 79 | CsI |\\n| 200 | 0 | Sapphire |\\n| 300 | 84 | CsI |\\n| 300 | 81 | Sapphire |\\n| 400 | 84 | CsI |\\n| 400 | 84 | Sapphire |\\n| 500 | 85 | CsI |\\n| 500 | 85 | Sapphire |\\n| 600 | 85 | CsI |\\n| 600 | 85 | Sapphire |\\n| 700 | 85 | CsI |\\n| 700 | 85 | Sapphire |\\n| 800 | 85 | CsI |\\n| 800 | 85 | Sapphire |\\n| 900 | 85 | CsI |\\n| 900 | 85 | Sapphire |\"},{\"panel_id\":\"b\",\"text\":\"| hv (eV) | (αhv)^2 (a.u.) |\\n|----------|-----------------|\\n| 5.0 | 0 |\\n| 5.25 | 0 |\\n| 5.5 | 1E+16 |\\n| 5.62 | 8E+16 |\\n| 5.75 | 3.7E+16 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Blue curve would drop significantly below the Black curve (lower transmittance). Impurities typically act as absorbing centers (darkening the film) or scattering sites. If the film were contaminated, it would appear brownish or cloudy rather than clear.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The critical absorption feature for CsI is at ~225 nm (5.5 eV). Borosilicate glass is opaque in this UV region (cutoff ~300 nm). If used, the substrate itself would absorb all the UV light before the CsI band edge was reached. The spectrometer would measure the glass cutoff (4.0 eV) instead of the CsI bandgap (5.5 eV), yielding false data.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The x-intercept indicates a direct band gap of approximately 5.7 eV. This signifies that the CsI film is a wide-band-gap insulator, where a photon with at least 5.7 eV of energy is required to excite an electron from the valence band to the conduction band.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The high transmittance and sharp cutoff imply it is an excellent solar-blind VUV coating. It would be transparent to wavelengths above its band edge (~220 nm), blocking visible light, while potentially converting shorter VUV photons into detectable electrons via the photoelectric effect, enabling selective VUV sensing.\"}]}]","bbox":[{"panel_id":"a","x":16,"y":10,"width":474,"height":346},{"panel_id":"b","x":514,"y":14,"width":496,"height":342}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/Weia et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1011,"height":356,"image_format":"jpeg","image_sha256":"3e445cf0b31c6f7c70fe545d16b4b38481f4190e81189b03dbb6e38c2b563c22","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_57_figure_6.jpg","caption":"Figure 6. (a) Transmittance spectra of the samples made by depositing CsI on a sapphire wafer and then depositing $\\mathrm{PbI}_2$ on CsI. Transmittance spectra of saphire and the as-deposited CsI film are shown for reference. Measurement were made from the center of the sample. (b) Digital photographs of selected samples from panel (a). CsI films were deposited at $150^{\\circ}\\mathrm{C}$ with 300 cycles. The pulse durations were $1.5~\\mathrm{s}$ for $\\mathrm{Cs(btsa)}$ and $1.0~\\mathrm{s}$ for $\\mathrm{SnI_4}$ and purge durations were $1.0~\\mathrm{s}$ . In the $\\mathrm{PbI}_2$ deposition, the durations of the precursor pulses were 0.8 and $2.0~\\mathrm{s}$ for $\\mathrm{Pb(btsa)}_2$ and $\\mathrm{SnI_4}$ , respectively, whereas purge durations were $1.0~\\mathrm{s}$ . The diameter of the sapphire wafers was $5.08~\\mathrm{cm}$ .","id":"train/atomic-layer-deposition/experimental-usecase/57/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/57/figure_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"apparatus diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates the solid-state reaction between CsI and PbI₂ to form perovskite CsPbI₃ as the number of PbI₂ ALD cycles increases. The CsI film is transparent in the visible region with an absorption edge near 225 nm, while PbI₂ shows an absorption edge at approximately 520 nm. With 2000–3000 PbI₂ cycles (the absorption edge shifts to around 700 nm (1.7–1.8 eV), indicating successful formation of the perovskite phase γ-CsPbI₃.At higher doses (3500–4000 cycles), the perovskite absorption feature weakens and the spectrum increasingly resembles pure PbI₂, indicating complete consumption of CsI and accumulation of excess unreacted PbI₂ on the surface.\"},{\"panel_id\":\"b\",\"text\":\"The image panel shows microscopic images of different materials at various PbI₂ cycle counts.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | Transmittance (%) | Sample |\\n|----------------:|------------------:|----------------------|\\n| 250 | 80 | Sapphire |\\n| 250 | 5 | CsI film |\\n| 250 | 0 | CsI + 2000 PbI₂ cycles |\\n| 250 | 0 | CsI + 2500 PbI₂ cycles |\\n| 250 | 0 | CsI + 3000 PbI₂ cycles |\\n| 250 | 0 | CsI + 3500 PbI₂ cycles |\\n| 250 | 0 | CsI + 4000 PbI₂ cycles |\\n| 250 | 10 | PbI₂ film |\\n| 300 | 83 | Sapphire |\\n| 300 | 75 | CsI film |\\n| 300 | 0 | CsI + 2000 PbI₂ cycles |\\n| 300 | 0 | CsI + 2500 PbI₂ cycles |\\n| 300 | 0 | CsI + 3000 PbI₂ cycles |\\n| 300 | 0 | CsI + 3500 PbI₂ cycles |\\n| 300 | 0 | CsI + 4000 PbI₂ cycles |\\n| 300 | 8 | PbI₂ film |\\n| 350 | 85 | Sapphire |\\n| 350 | 82 | CsI film |\\n| 350 | 0 | CsI + 2000 PbI₂ cycles |\\n| 350 | 0 | CsI + 2500 PbI₂ cycles |\\n| 350 | 0 | CsI + 3000 PbI₂ cycles |\\n| 350 | 0 | CsI + 3500 PbI₂ cycles |\\n| 350 | 5 | CsI + 4000 PbI₂ cycles |\\n| 350 | 6 | PbI₂ film |\\n| 400 | 86 | Sapphire |\\n| 400 | 85 | CsI film |\\n| 400 | 5 | CsI + 2000 PbI₂ cycles |\\n| 400 | 5 | CsI + 2500 PbI₂ cycles |\\n| 400 | 3 | CsI + 3000 PbI₂ cycles |\\n| 400 | 10 | CsI + 3500 PbI₂ cycles |\\n| 400 | 5 | CsI + 4000 PbI₂ cycles |\\n| 400 | 25 | PbI₂ film |\\n| 450 | 86 | Sapphire |\\n| 450 | 86 | CsI film |\\n| 450 | 20 | CsI + 2000 PbI₂ cycles |\\n| 450 | 10 | CsI + 2500 PbI₂ cycles |\\n| 450 | 8 | CsI + 3000 PbI₂ cycles |\\n| 450 | 30 | CsI + 3500 PbI₂ cycles |\\n| 450 | 40 | CsI + 4000 PbI₂ cycles |\\n| 450 | 50 | PbI₂ film |\\n| 500 | 87 | Sapphire |\\n| 500 | 87 | CsI film |\\n| 500 | 35 | CsI + 2000 PbI₂ cycles |\\n| 500 | 25 | CsI + 2500 PbI₂ cycles |\\n| 500 | 20 | CsI + 3000 PbI₂ cycles |\\n| 500 | 45 | CsI + 3500 PbI₂ cycles |\\n| 500 | 60 | CsI + 4000 PbI₂ cycles |\\n| 500 | 65 | PbI₂ film |\\n| 600 | 87 | Sapphire |\\n| 600 | 87 | CsI film |\\n| 600 | 60 | CsI + 2000 PbI₂ cycles |\\n| 600 | 55 | CsI + 2500 PbI₂ cycles |\\n| 600 | 50 | CsI + 3000 PbI₂ cycles |\\n| 600 | 65 | CsI + 3500 PbI₂ cycles |\\n| 600 | 80 | CsI + 4000 PbI₂ cycles |\\n| 600 | 78 | PbI₂ film |\\n| 700 | 88 | Sapphire |\\n| 700 | 88 | CsI film |\\n| 700 | 80 | CsI + 2000 PbI₂ cycles |\\n| 700 | 75 | CsI + 2500 PbI₂ cycles |\\n| 700 | 72 | CsI + 3000 PbI₂ cycles |\\n| 700 | 75 | CsI + 3500 PbI₂ cycles |\\n| 700 | 84 | CsI + 4000 PbI₂ cycles |\\n| 700 | 82 | PbI₂ film |\\n| 900 | 88 | Sapphire |\\n| 900 | 88 | CsI film |\\n| 900 | 87 | CsI + 2000 PbI₂ cycles |\\n| 900 | 85 | CsI + 2500 PbI₂ cycles |\\n| 900 | 83 | CsI + 3000 PbI₂ cycles |\\n| 900 | 85 | CsI + 3500 PbI₂ cycles |\\n| 900 | 88 | CsI + 4000 PbI₂ cycles |\\n| 900 | 86 | PbI₂ film |\"},{\"panel_id\":\"b\",\"text\":\"| | Sapphire | CsI & 3000 PbI2 cyc. | CsI & 3500 PbI2 cyc. | CsI & 4000 PbI2 cyc. |\\n|---|---|---|---|---|\\n| 1 | Sapphire | CsI & 3000 PbI2 cyc. | CsI & 3500 PbI2 cyc. | CsI & 4000 PbI2 cyc. |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The appearance of a strong absorption edge at ~700 nm (the film turns black). Pure CsI is transparent, so this darkening confirms the reaction to form CsPbI₃ .\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3000 cycles (Black) is optimal. It has the strongest absorption. Going to 4000 cycles is worse because the excess PbI₂ layer blocks light (increasing transmittance to 80% at 600 nm), reducing the cell's efficiency.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Excess Lead Iodide ( PbI₂). The curve shape reverting to match the PbI₂ reference indicates that all CsI was consumed and unreacted PbI₂ is now accumulating on top.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Because it would be transparent to visible light. Without the Perovskite phase (which absorbs < 700 nm), the unreacted bilayer lets sunlight pass right through without generating any electricity.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":1,"width":512,"height":417},{"panel_id":"b","x":520,"y":3,"width":487,"height":413}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/57/Weia et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1008,"height":417,"image_format":"jpeg","image_sha256":"c88b1bfa1cd8c364f1c104bce40aea60149ef4c28fcb93f8b68344f6d1322840","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_59_fig_2.jpg","caption":"FIG. 2. (Color online) The imaginary part of the dielectric function $\\epsilon_{2}$ of (a) a conductive, cubic $\\mathrm{TaN}_{x,x\\leqslant 1}$ film and (b) a semiconductive $\\mathrm{Ta}_3\\mathrm{N}_5$ film as deduced from spectroscopic ellipsometry measurements. The dielectric functions are parametrized using (a) a Drude and two Lorentz oscillators and (b) using two Tauc-Lorentz oscillators. The photon energy ranges from the near infrared $(0.75 \\mathrm{eV})$ to the ultraviolet $(6.5 \\mathrm{eV})$ . The conductive $\\mathrm{TaN}_{x,x\\leqslant 1}$ film was deposited using $10 \\mathrm{s} \\mathrm{H}_2$ plasma in the ALD cycle, while the $\\mathrm{Ta}_3\\mathrm{N}_5$ film was deposited using $10 \\mathrm{s} \\mathrm{NH}_3$ plasma.","id":"train/atomic-layer-deposition/experimental-usecase/59/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/59/fig_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the dielectric function ε₂ as a function of photon energy for different models: Drude Lorentz, Drude, Lorentz 1, and Lorentz 2 for the conductive cubic TaN film\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the dielectric function ε₂ as a function of photon energy for different models: Tauc-Lorentz, Tauc-Lorentz 1, and Tauc-Lorentz 2 for the semiconductive Ta3N5 film.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Photon energy (eV) | Drude Lorentz | Drude | Lorentz 1 | Lorentz 2 | \\n|---|---|---|---|---|\\n| 1 | 14 | 8 | 0 | 3 |\\n| 2 | 9 | 3 | 1 | 5 |\\n| 3 | 6 | 2 | 2 | 2 |\\n| 4 | 4 | 1 | 3 | 1 |\\n| 5 | 5 | 0.5 | 4 | 0.5 |\\n| 6 | 6 | 0 | 5.5 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Photon energy (eV) | Tauc-Lorentz | Tauc-Lorentz 1 | Tauc-Lorentz 2 |\\n|---|---|---|---|\\n| 1 | 0 | 0 | 0 | \\n| 2 | 0 | 0 | 0 | \\n| 3 | 1.5 | 1.5 | 0 |\\n| 4 | 6 | 5.5 | 0 |\\n| 5 | 5.8 | 4.5 | 2 |\\n| 6 | 5 | 2 | 3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The imaginary part of the dielectric function, ε₂.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A Drude and two Lorentz oscillators.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Photon energy varies from the near infrared to the ultraviolet.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Similar to the Tauc-Lorentz 1 model, the dielectric constant of the Tauc-Lorentz model increases until around 4 eV and then decreases. However, the Tauc-Lorentz 2 model shows an increase after 4 eV.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":599,"height":460},{"panel_id":"b","x":0,"y":474,"width":602,"height":461}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/Langereis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"59","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":602,"height":939,"image_format":"jpeg","image_sha256":"25aff3c027bc9a759355bad7af95b6327e06377b8100441ce1022d52532c3cff","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_59_fig_3.jpg","caption":"FIG. 3. (Color online) Film thickness as a function of number of remote plasma ALD cycles shown for the growth of cubic $\\mathrm{TaN}_{x,x\\leqslant 1}$ (closed symbols) and $\\mathrm{Ta}_3\\mathrm{N}_5$ (open symbols) as deduced from in situ spectroscopic ellipsometry measurements. The solid lines are linear fits to the data. The cubic $\\mathrm{TaN}_{x,x\\leqslant 1}$ film was deposited using $10\\mathrm{~s~}$ of $\\mathrm{H}_{2}$ plasma in the ALD cycle, while the $\\mathrm{Ta}_3\\mathrm{N}_5$ film was deposited using $10\\mathrm{~s~}$ of $\\mathrm{NH}_3$ plasma.","id":"train/atomic-layer-deposition/experimental-usecase/59/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/59/fig_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between the number of cycles and film thickness, indicating a linear increase for both TaN x,x⩽1 and Ta3N5.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of cycles | TaN | Ta3N5 |\\n|------------------|--------------------|--------------------|\\n| 0 | 0 | 0 |\\n| 100 | 5 | 6 |\\n| 200 | 10 | 12 |\\n| 300 | 15 | 17 |\\n| 400 | 20 | 15 |\\n| 500 | 25 | 30 |\\n| 600 | 30 | 35 |\\n| 700 | 35 | 40 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Measurements were taken for two films: cubic taN and Ta3N5.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In accordance with an ALD process, the film thickness increases with the number of cycles for both samples.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ta3N5 film is thicker than TaN, because it shows higher film thickness values.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":593,"height":444}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/Langereis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"59","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":597,"height":450,"image_format":"jpeg","image_sha256":"91b6ac60b42ea5ca092f8c3b33b31c9e902f6b94e47af7c04b63130aa07be937","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_59_fig_7.jpg","caption":"FIG. 7. (Color online) The imaginary part of the dielectric function $\\epsilon_{2}$ of $\\mathrm{TaN}_x$ films deposited under various plasma conditions in the ALD cycle and as determined by in situ spectroscopic ellipsometry: (1) $30\\mathrm{~s~H}_{2}$ plasma $(x = 0.44)$ , (2) $10\\mathrm{~s~H}_{2}$ plasma $(x = 0.49)$ , (3) $5\\mathrm{~s~H}_{2} - \\mathrm{N}_{2}$ (98:2) plasma $(x = 1.0)$ , (4) $10\\mathrm{~s~H}_{2} - \\mathrm{N}_{2}$ (1:1) plasma $(x = 1.55)$ , and (5) $10\\mathrm{~s~NH}_{3}$ plasma $(x = 1.67)$ . The ratio $x = [\\mathrm{N}] / [\\mathrm{Ta}]$ of the $\\mathrm{TaN}_x$ films was determined by RBS analysis.","id":"train/atomic-layer-deposition/experimental-usecase/59/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/59/fig_7","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart illustrates the dielectric function ε₂ as a function of photon energy (eV). Multiple curves represent different materials and conditions for the TiN ALD cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Photon energy (eV) | 1 | 2 | 3 | 4 | 5 |\\n| --- | --- | --- | --- | --- | --- |\\n| 1 | 30 | 15 | 9 | 1 | 0 |\\n| 2 | 13 | 10 | 9 | 1 | 0 |\\n| 3 | 8 | 5 | 5 | 8 | 1 |\\n| 4 | 7 | 5 | 5 | 10 | 7 |\\n| 5 | 6 | 5 | 5 | 9 | 7 |\\n| 6 | 6 | 6 | 5 | 7 | 6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In-situ spectroscopic ellipsometry.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dielectric function of sample \\\"1\\\" decreases significantly as the photon energy increases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Each film was deposited under different plasma conditions. These conditions could include different exposurre times or plasma gases.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Photon energies varies from the near infrared to the ultraviolet.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":603,"height":459}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/Langereis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"59","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":611,"height":461,"image_format":"jpeg","image_sha256":"84c644ae1f92412411fec023e8f875d9b33248b2ed2efcdaca594d40bee9c518","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_60_85ead34ddeac10d73af92922cd512497aa52e7e6f3abc2a8b4c0729255402d13.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/60/85ead34ddeac10d73af92922cd512497aa52e7e6f3abc2a8b4c0729255402d13","sample_id":"atomic-layer-deposition/experimental-usecase/60/85ead34ddeac10d73af92922cd512497aa52e7e6f3abc2a8b4c0729255402d13","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":1,"width":416,"height":379},{"panel_id":"b","x":419,"y":1,"width":483,"height":374}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/85ead34ddeac10d73af92922cd512497aa52e7e6f3abc2a8b4c0729255402d13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/85ead34ddeac10d73af92922cd512497aa52e7e6f3abc2a8b4c0729255402d13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/Zhao et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"60","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"not_found"},"width":902,"height":380,"image_format":"jpeg","image_sha256":"84dfca5a33d60875551ab7efdd394295db503f9d54e5b1d9b429a9b9036d2bb8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_60_figure_3.jpg","caption":"Figure 3. GPC as a function of substrate temperature.","id":"train/atomic-layer-deposition/experimental-usecase/60/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/60/figure_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the temperature dependence of the atomic layer deposition growth per cycle (GPC) for Y₂O₃ films using Y(EtCp)₂(iPr-amd) with H₂O, O₂ plasma, and H₂O plasma reactants.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Substrate temperature (°C) | GPC (Å/cycle) | Precursor |\\n|---|---|---|\\n| 119 | 0.0 | Y(EtCp)2(iPr-amd) without reactant |\\n| 151 | 0.0 | Y(EtCp)2(iPr-amd) without reactant |\\n| 180 | 0.0 | Y(EtCp)2(iPr-amd) without reactant |\\n| 200 | 0.1 | Y(EtCp)2(iPr-amd) without reactant |\\n| 220 | 0.1 | Y(EtCp)2(iPr-amd) without reactant |\\n| 250 | 0.1 | Y(EtCp)2(iPr-amd) without reactant |\\n| 280 | 0.2 | Y(EtCp)2(iPr-amd) without reactant |\\n| 300 | 0.3 | Y(EtCp)2(iPr-amd) without reactant |\\n| 320 | 0.5 | Y(EtCp)2(iPr-amd) without reactant |\\n| 350 | 0.6 | Y(EtCp)2(iPr-amd) without reactant |\\n| 380 | 0.8 | Y(EtCp)2(iPr-amd) without reactant |\\n| 120 | 0.6 | H2O |\\n| 149 | 0.7 | H2O |\\n| 179 | 0.8 | H2O |\\n| 199 | 0.8 | H2O |\\n| 220 | 0.8 | H2O |\\n| 250 | 0.8 | H2O |\\n| 279 | 0.9 | H2O |\\n| 300 | 1.0 | H2O |\\n| 320 | 1.1 | H2O |\\n| 349 | 1.3 | H2O |\\n| 380 | 1.4 | H2O |\\n| 120 | 0.7 | O2 plasma |\\n| 149 | 0.8 | O2 plasma |\\n| 180 | 0.8 | O2 plasma |\\n| 200 | 0.9 | O2 plasma |\\n| 220 | 0.9 | O2 plasma |\\n| 251 | 0.9 | O2 plasma |\\n| 279 | 1.0 | O2 plasma |\\n| 298 | 1.2 | O2 plasma |\\n| 319 | 1.2 | O2 plasma |\\n| 349 | 1.4 | O2 plasma |\\n| 380 | 1.5 | O2 plasma |\\n| 120 | 0.8 | H2O plasma |\\n| 149 | 1.0 | H2O plasma |\\n| 180 | 1.0 | H2O plasma |\\n| 201 | 1.1 | H2O plasma |\\n| 220 | 1.1 | H2O plasma |\\n| 250 | 1.1 | H2O plasma |\\n| 280 | 1.2 | H2O plasma |\\n| 300 | 1.3 | H2O plasma |\\n| 320 | 1.4 | H2O plasma |\\n| 350 | 1.6 | H2O plasma |\\n| 381 | 1.7 | H2O plasma |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"150 - 300 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"150 - 300 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, there is clear evidence of thermal decomposition of the yttrium precursor above 300°C. The growth rate for the precursor without any reactant (gray line) begins to rise significantly above this temperature. this indicates self-deposition.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Above 300°C, GPC rises for all tested processes. The systematic increase is most likely caused by the thermal decomposition of the yttrium precursor molecules. This disrupts the self-limiting surface reactions required for ALD, leading to uncontrolled material deposition. This is confirmed by the significant growth observed when pulsing the yttrium precursor without any co-reactant.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":7,"width":463,"height":336}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/Zhao et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"60","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":470,"height":345,"image_format":"jpeg","image_sha256":"6fafaf3930cdc3a642b74f6fc1ef68fab4bec352adf08d63c71380cc1c851bc5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_66_figure_4.jpg","caption":"Figure 4. Selected $\\theta_{\\mathrm{Kerr}}$ vs field hysteresis loops for (a) $\\mathrm{ZnO}$ ; (b) oxygen-deficient $\\mathrm{ZnO}$ ; and (c) $\\mathrm{Ni - }$ , (d) $\\mathrm{Co - }$ , and (e) Fe-doped $\\mathrm{ZnO}$ layers. The insets show example curves with large hysteresis and Kerr angle values.","id":"train/atomic-layer-deposition/experimental-usecase/66/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/66/figure_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"},{"panel_id":"e","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A line chart showing the relationship between magnetic field strength and Kerr rotation angle for undoped ZnO.\"},{\"panel_id\":\"b\",\"text\":\"A line chart showing the relationship between magnetic field strength and Kerr rotation angle for oxygen-deficient ZnO.\"},{\"panel_id\":\"c\",\"text\":\"A line chart showing the relationship between magnetic field strength and Kerr rotation angle for Ni doped ZnO\"},{\"panel_id\":\"d\",\"text\":\"A line chart showing the relationship between magnetic field strength and Kerr rotation angle for Co doiped ZnO.\"},{\"panel_id\":\"e\",\"text\":\"A line chart showing the relationship between magnetic field strength and Kerr rotation angle for Fe doped ZnO.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Magnetic field (Oe) | θ_Kerr (mdeg) |\\n|---|---|\\n|-4000 |-15 |\\n|-3000 |-10 |\\n|-2000 |-5 |\\n|-1000 |0 |\\n|0 |0 |\\n|1000 |5 |\\n|2000 |10 |\\n|3000 |15 |\\n|4000 |20 |\"},{\"panel_id\":\"b\",\"text\":\"| Magnetic field (Oe) | θ_Kerr (mdeg) |\\n|---|---|\\n|-4000 |-15 |\\n|-3000 |-10 |\\n|-2000 |-5 |\\n|-1000 |0 |\\n|0 |0 |\\n|1000 |5 |\\n|2000 |10 |\\n|3000 |15 |\\n|4000 |20 |\"},{\"panel_id\":\"c\",\"text\":\"| Magnetic field (Oe) | θ_Kerr (mdeg) |\\n|---|---|\\n|-4000 |-100 |\\n|-3000 |-80 |\\n|-2000 |-60 |\\n|-1000 |-40 |\\n|0 |0 |\\n|1000 |40 |\\n|2000 |60 |\\n|3000 |80 |\\n|4000 |100 |\"},{\"panel_id\":\"d\",\"text\":\"| Magnetic field (Oe) | θ_Kerr (mdeg) |\\n|---|---|\\n|-4000 |-60 |\\n|-3000 |-50 |\\n|-2000 |-40 |\\n|-1000 |-30 |\\n|0 |0 |\\n|1000 |30 |\\n|2000 |40 |\\n|3000 |50 |\\n|4000 |60 |\"},{\"panel_id\":\"e\",\"text\":\"| Magnetic field (Oe) | θ_Kerr (mdeg) |\\n|---|---|\\n|-4000 |-90 |\\n|-3000 |-70 |\\n|-2000 |-50 |\\n|-1000 |-30 |\\n|0 |0 |\\n|1000 |30 |\\n|2000 |50 |\\n|3000 |70 |\\n|4000 |90 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. For undoped ZnO, θ_Kerr varies from ~-15 mdeg to + 15 mdeg\\n2. For oxygen-deficient ZnO, θ_Kerr varies from ~-15 mdeg to + 15 mdeg\\n3. For Ni-doped ZnO, θ_Kerr varies from ~-100 mdeg to + 100 mdeg\\n4. For Co-doped ZnO, θ_Kerr varies from ~-60 mdeg to + 60 mdeg\\n5. For Fe-doped ZnO, θ_Kerr varies from ~-90 mdeg to + 90 mdeg\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Inhomogeneity is observed for both undoped and TM-doped ZnO layers. The observed complex micro MOKE (diffracted and asymmetrical) hysteresis loops, particularly for the TM-doped samples, reveal the variations and non-uniformity of the MO response. As is seen, these variations are significant in the case of TM-doped layers and for a certain fraction of the measurements shown in the insets with broad hysteresis contours, and θKerr can reach significant values at the maximum applied field.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"MOKE stands for magneto optic kerr effect,\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":518,"height":482},{"panel_id":"b","x":523,"y":1,"width":476,"height":504},{"panel_id":"c","x":6,"y":551,"width":500,"height":472},{"panel_id":"d","x":505,"y":555,"width":451,"height":468},{"panel_id":"e","x":958,"y":557,"width":445,"height":468}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/Paskaleva et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"66","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1406,"height":1027,"image_format":"jpeg","image_sha256":"6769e0edc553a67eaf73161f4a17bbce44bafd5f2b7d4c504401e3b9b5b87880","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_7_fig_1.jpg","caption":"Fig. 1. Mass sensor signal as a function of time recorded at temperatures of $100$ and $300^{\\circ}\\mathrm{C}$ during a single ALD cycle. Mass sensor was covered with a buffer layer deposited at $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/7/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/7/fig_1","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Real-time mass sensor signal vs. time during a single ALD cycle at growth temperatures of 100C and 300C. The plot defines the specific mass changes: $\\\\Delta m_1$ (gain from TiCl_4 pulse), $\\\\Delta m_2$ (loss during purge/reaction), $\\\\Delta m_2'$ (initial desorption), and $\\\\Delta m_0$ (net mass increment per cycle).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Event | Signal 300°C (Top) | Signal 100°C (Bottom) |\\n|---|---|---|---|\\n| 10 | Start TiCl4 Pulse | ~0 | ~0 |\\n| 12 | End TiCl4 Rise (Δm1) | ~70 | ~60 |\\n| 20 | End TiCl4 Pulse | ~70 | ~60 |\\n| 25 | Start H2O Pulse | ~65 | ~55 |\\n| 26 | Drop (Δm2') | ~35 | ~35 |\\n| 30 | End H2O Pulse | ~35 | ~35 |\\n| 40 | Final Level (Δm0) | ~35 | ~35 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1.300°C\\n, 2. 100°C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the vertical step height labeled Δm1 is clearly larger in the top trace (300°C).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the TiCl₄ pulse, the top trace shows a sharp step increase labeled Δm₁, followed by a plateau while the pulse continues. Around the H₂O pulse, the signal decreases, with the drop region annotated by Δm₂ and Δm₂′. The trace then settles to a lower plateau and finishes the cycle at a baseline shifted upward from the start, labeled Δm₀. Overall, it’s a step-up (TiCl₄) then step-down (H₂O-related) response with a nonzero net offset.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiCl4\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":441,"height":541}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/Aarik et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":442,"height":547,"image_format":"jpeg","image_sha256":"3fa369bab6ab2fc3709cc00052557b6a571c305836e02eb7ba6bcfc5139e099a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig4.jpg","caption":"FIG.4. Growth profiles for a $200ms$ 20 mTorr precursor dose for different values of the reaction probability $\\beta_{10}$ Higher reaction probabilities lead to steeper growth profiles.","id":"train/atomic-layer-deposition/simulation-usecase/11/fig4","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the surface coverage of a material along the axial position. Different lines represent different reaction probabilities (β10).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Axial position (m) | Coverage (β10 = 0.0001) | Coverage (β10 = 0.0002) | Coverage (β10 = 0.0005 | Coverage (β10 = 0.001) | Coverage (β10 = 0.002) | Coverage (β10 = 0.005) | Coverage (β10 = 0.01) | Coverage (β10 = 0.02) |\\n|---|---|---|---|---|---|---|---|---|\\n| 0.0 | 0.1 | 0.15 | 0.3 | 0.5 | 0.75 | 0.95 | 1 | 1 | \\n| 0.1 | 0.1 | 0.15 | 0.3 | 0.45 | 0.6 | 0.85 | 1 | 1 |\\n| 0.2 | 0.1 | 0.15 | 0.3 | 0.4 | 0.5 | 0.6 | 0.75 | 0.9 |\\n| 0.3 | 0.1 | 0.15 | 0.25 | 0.35 | 0.4 | 0.4 | 0.2 | 0.175 |\\n| 0.4 | 0.1 | 0.15 | 0.25 | 0.3 | 0.3 | 0.2 | 0.1 | 0.05 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200 ms.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"20 mTorr.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The reaction probability (β10).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 4 shows that the reaction probability β₁₀ strongly controls how rapidly surface coverage develops along the reactor, but its effect depends on whether the process is transport-limited or reaction-limited. At relatively high reaction probabilities, decreasing β₁₀ reduces the steepness of the unsaturated growth profile, leading to a more gradual increase in surface coverage without a proportional decrease in the total mass uptake; in this regime, the deposited mass is primarily redistributed spatially within the reactor rather than reduced overall. As β₁₀ is lowered further, the system transitions into a reaction-limited regime, where surface reactions become the bottleneck and the surface coverage decreases directly in proportion to β₁₀.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":663,"height":491}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":672,"height":492,"image_format":"jpeg","image_sha256":"7b61aa4aae946d9a835719b6bdad45f88ae0ad81d8ca3373df170ac93adb2a30","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_10.jpg","caption":"FIG. 10. Reactor growth profiles for a soft-saturating self-limited model with two components (a) $\\beta_{1b} = 10^{-2}$ and $\\beta_{1b} = 10^{-3}$ and (b) $\\beta_{1b} = 10^{-2}$ and $\\beta_{1b} = 10^{-4}$ . All profiles correspond to the same unsaturated dose time of $0.2 \\text{s}$ for an average precursor pressure at the inlet of 50 mTorr. (c) Surface coverage for increasing dose times using (b) conditions.","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_10","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_10","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the reactor growth profiles for a soft-saturating self-limited model with two components, with β_1a = 10^-2 and β_1b = 10^-3.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the reactor growth profiles for a soft-saturating self-limited model with two components, with β_1a = 10^-2 and β_1b = 10^-4.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the reactor growth profiles with the same conditions as (b), but with four different dose times (t_d).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Axial position (m) | f₂ = 0 | f₂ = 0.1 | f₂ = 0.2 | f₂ = 0.4 | f₂ = 0.6 | f₂ = 0.8 | f₂ = 1 |\\n|---|---|---|---|---|---|---|---|\\n| 0.00 | 1.00 | 0.95 | 0.90 | 0.80 | 0.65 | 0.55 | 0.45 |\\n| 0.10 | 0.98 | 0.92 | 0.88 | 0.75 | 0.60 | 0.50 | 0.40 |\\n| 0.20 | 0.85 | 0.80 | 0.75 | 0.65 | 0.55 | 0.45 | 0.35 |\\n| 0.30 | 0.30 | 0.35 | 0.45 | 0.55 | 0.50 | 0.40 | 0.30 |\\n| 0.40 | 0.05 | 0.10 | 0.15 | 0.30 | 0.35 | 0.30 | 0.25 |\"},{\"panel_id\":\"b\",\"text\":\"| Axial position (m) | f₂ = 0 | f₂ = 0.1 | f₂ = 0.2 | f₂ = 0.4 | f₂ = 0.6 | f₂ = 0.8 | f₂ = 1 |\\n|---|---|---|---|---|---|---|---|\\n| 0.00 | 1.00 | 0.95 | 0.85 | 0.65 | 0.45 | 0.25 | 0.08 |\\n| 0.10 | 0.98 | 0.92 | 0.82 | 0.62 | 0.44 | 0.25 | 0.08 |\\n| 0.20 | 0.90 | 0.85 | 0.75 | 0.60 | 0.43 | 0.25 | 0.08 |\\n| 0.30 | 0.35 | 0.45 | 0.55 | 0.50 | 0.42 | 0.25 | 0.08 |\\n| 0.40 | 0.08 | 0.12 | 0.20 | 0.40 | 0.40 | 0.25 | 0.08 |\"},{\"panel_id\":\"c\",\"text\":\"| Axial position (m) | t_d = 0.2 s | t_d = 0.3 s | t_d = 0.5 s | t_d = 1.0 s |\\n|---|---|---|---|---|\\n| 0.00 | 0.90 | 0.92 | 0.93 | 0.94 |\\n| 0.10 | 0.88 | 0.91 | 0.92 | 0.94 |\\n| 0.20 | 0.75 | 0.90 | 0.92 | 0.94 |\\n| 0.30 | 0.40 | 0.88 | 0.92 | 0.94 |\\n| 0.40 | 0.12 | 0.70 | 0.92 | 0.94 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 0.9.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50 mTorr.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.2 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 10 shows that the presence and relative contribution of a slow self-limited reaction component can substantially alter growth profiles and lead to apparent saturation behaviour that is not fully representative of true surface saturation. When both fast and slow components have relatively high reaction probabilities, increasing the fraction of the slow component produces a gradual transition from a steep, step-like saturation profile to a more gently varying, nearly linear axial coverage profile. When the reaction probability of the slow component is reduced by two orders of magnitude, profiles near the reactor inlet can exhibit a plateau characteristic of saturated growth even though the absolute surface coverage remains well below full saturation. Increasing the dose time in this regime further accentuates this effect: beyond a certain dose duration, the process appears saturated, yet the slow component continues to evolve and yields a small but measurable increase in surface coverage.\"}]}]","bbox":[{"panel_id":"a","x":14,"y":28,"width":618,"height":395},{"panel_id":"b","x":14,"y":457,"width":618,"height":398},{"panel_id":"c","x":14,"y":886,"width":618,"height":436}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":661,"height":1322,"image_format":"jpeg","image_sha256":"0fbfdb368d36306bb58667c6136ff196a83da887ed77018b4fa98ba574713ac1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_13.jpg","caption":"FIG. 13. Coverage profiles in the presence of competitive adsorption by reaction by-products. (a) Precursor coverage profile for a process characterized by $\\beta_{10} = 10^{-2}$ and $p_0 = 50$ mTorr. (b) By-products coverage profiles for the same conditions used in (a). Note how $\\Theta +\\Theta_{bp} = 1$ indicating that the process is fully saturated. (c) Impact of precursor partial pressure for a process characterized by $\\beta_{10} = 10^{-2}$ and $\\beta_{bp0} = 10^{-3}$","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_13","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_13","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the precursor coverage (Precursor cov.) against axial position (m) for different values of $\\\\beta_{bp}$.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the byproduct coverage (Byproduct cov.) against axial position (m) for different values of $\\\\beta_{bp}$.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the precursor coverage against the axial position for different values of precursor partial pressure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Axial position (m) | Precursor cov. $\\\\beta_{bp}$ = 0 | Precursor cov. $\\\\beta_{bp}$ = 0.0001 | Precursor cov. $\\\\beta_{bp}$ = 0.001 | Precursor cov. $\\\\beta_{bp}$ = 0.01 |\\n|---|---|---|---|---|\\n| 0.0 | 1.00 | 1.00 | 1.00 | 0.85 |\\n| 0.1 | 1.00 | 1.00 | 0.95 | 0.75 |\\n| 0.2 | 1.00 | 1.00 | 0.90 | 0.65 |\\n| 0.3 | 1.00 | 1.00 | 0.85 | 0.60 |\\n| 0.4 | 1.00 | 1.00 | 0.80 | 0.50 |\"},{\"panel_id\":\"b\",\"text\":\"| Axial position (m) | Byproduct cov. $\\\\beta_{bp}$ = 0 | Byproduct cov. $\\\\beta_{bp}$ = 0.0001 | Byproduct cov. $\\\\beta_{bp}$ = 0.001 | Byproduct cov. $\\\\beta_{bp}$ = 0.01 |\\n|---|---|---|---|---|\\n| 0.0 | 0.00 | 0.00 | 0.00 | 0.15 |\\n| 0.1 | 0.00 | 0.00 | 0.05 | 0.25 |\\n| 0.2 | 0.00 | 0.00 | 0.10 | 0.35 |\\n| 0.3 | 0.00 | 0.00 | 0.15 | 0.40 |\\n| 0.4 | 0.00 | 0.00 | 0.20 | 0.50 |\"},{\"panel_id\":\"c\",\"text\":\"| Axial position (m) | Precursor cov. 100 mTorr | Precursor cov. 50 mTorr | Precursor cov. 25 mTorr |\\n|---|---|---|---|\\n| 0.0 | 0.98 | 0.98 | 0.98 |\\n| 0.1 | 0.95 | 0.95 | 0.95 |\\n| 0.2 | 0.93 | 0.92 | 0.90 |\\n| 0.3 | 0.93 | 0.89 | 0.85 |\\n| 0.4 | 0.90 | 0.85 | 0.80 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Increasing the precursor pressure reduces the impact of by-product adsorption, leading to weaker axial coverage gradients.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50 mTorr.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"β₁₀ = 10⁻².\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the by-product reaction probability introduces progressively stronger axial gradients in the precursor surface coverage, even though the process is saturated, because adsorbed by-products occupy surface sites and reduce the available precursor coverage according to Θ = 1 − Θ_bp.\"}]}]","bbox":[{"panel_id":"a","x":10,"y":8,"width":662,"height":308},{"panel_id":"b","x":0,"y":352,"width":672,"height":297},{"panel_id":"c","x":18,"y":683,"width":653,"height":333}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":672,"height":1017,"image_format":"jpeg","image_sha256":"1ee0347ca6012187741c91cb287ec8f7475469165b0538a3b52bbd279d23ead9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_15_fig_6.jpg","caption":"Fig. 6. Predicted energies for the second chlorine loss pathways via hydrolysis (R3a and R3b). The zero is the sum energy of the products of R1a/R1b and water.","id":"train/atomic-layer-deposition/simulation-usecase/15/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/15/fig_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a potential energy diagram plotting the energy changes (ΔE) for two reaction pathways (R3a and R3b). The chart compares the pathways through their chemisorption states (CS), transition states (TS) and intermediate physisorption states (PS), revealing that pathway R3a is energetically more favorable than R3b.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|  Reaction coordinate, a.u.| Species Label | ΔE, kJ/mol | \\n| --- | --- | --- |\\n| 1 | CS(R3a) | -64.5 | \\n| 2 | TS(R3a) | 2.2 |\\n| 3 | PS(R3a) | -20.4 |\\n| 4  | Product(R3a) | -11.1 |\\n| 1 | CS(R3b) | -59.7 |\\n| 2 | TS(R3b) | 10.1 |\\n| 3 | PS(R3b) | -12.4 |\\n| 4 | Product(R3b) | 11.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"R3a.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Pathway R3a proceeds faster than pathway R3b. This conclusion is supported by the lower potential energy barrier found at the transition state (TS). The diagram shows that R3a has a barrier at only 2.2 kJ/mol, whereas R3b faces a higher barrier of 10.1 kJ/mol.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Product(R3a) is the more stable product.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Pathway R3b is endothermic.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":0,"width":643,"height":412}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/Chengxing Cui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":650,"height":414,"image_format":"jpeg","image_sha256":"66ed04ec34fcf636f6d50bbae7366f20e88a3b9be05bb0e11e36878fe3825223","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_14.jpg","caption":"Figure 14: (a) Blue line shows the total density profiles at 0 ALD cycles, red for four ALD cycles, and green for eight ALD cycles with respect to the Z-direction distance of the $\\mathsf{Al}_2\\mathsf{O}_3$ film at $300^{\\circ}C$ [186]. (b) The number density profiles for oxygen (blue), aluminium (green), and hydrogen (red) as a function of the Z-direction distance of $\\mathsf{Al}_2\\mathsf{O}_3$ film at $300^{\\circ}C$ [186].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_14","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_14","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line graph shows the density profiles of an Al₂O₃ film along its thickness (Z-direction) at three stages of ALD: 0 cycles (blue), 4 cycles (red), and 8 cycles (green), all at 300°C. The plot reveals how film density evolves with ALD cycles\"},{\"panel_id\":\"b\",\"text\":\"The graph shows the number density profiles (in atoms/nm³) for Oxygen (O - blue), Aluminum (Al - green), and Hydrogen (H - red) atoms across the thickness (Z-direction) of an Al₂O₃ film deposited at 300°C. The profiles reveal the layered atomic composition of the film: Oxygen and Aluminum densities peak in the main film region (~8–15 Å) where the Al₂O₃ matrix forms, while Hydrogen density is prominent at the film's interfaces, likely indicating surface hydroxyl groups (-OH) or precursor ligands.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Z (Å) | L0 density (g/cm³) | L4 density (g/cm³) | L8 density (g/cm³) |\\n| --- | --- | --- | --- |\\n| 3.0 | 1.10 | 1.10 | 1.10 |\\n| 4.0 | 0.55 | 0.56 | 0.56 |\\n| 5.0 | 0.56 | 0.56 | 0.56 |\\n| 6.0 | 0.80 | 0.85 | 0.85 |\\n| 7.0 | 0.55 | 0.70 | 0.75 |\\n| 8.0 | 0.25 | 0.50 | 0.65 |\\n| 9.0 | 0.05 | 0.30 | 0.55 |\\n| 10.0 | 0.00 | 0.15 | 0.45 |\\n| 11.0 | 0.00 | 0.05 | 0.35 |\\n| 12.0 | 0.00 | 0.02 | 0.28 |\\n| 13.0 | 0.00 | 0.00 | 0.20 |\\n| 14.0 | 0.00 | 0.00 | 0.12 |\\n| 15.0 | 0.00 | 0.00 | 0.05 |\\n| 16.0 | 0.00 | 0.00 | 0.02 |\\n| 17.0 | 0.00 | 0.00 | 0.00 |\"},{\"panel_id\":\"b\",\"text\":\"| Z (Å) | O Number density (nm⁻³) | Al Number density (nm⁻³) | H Number density (nm⁻³) |\\n| --- | --- | --- | --- |\\n| 3.0 | 13.7 | 17.0 | 0.3 |\\n| 4.0 | 14.3 | 3.7 | 0.4 |\\n| 5.0 | 9.4 | 7.7 | 1.3 |\\n| 6.0 | 15.0 | 9.9 | 1.4 |\\n| 7.0 | 12.7 | 7.6 | 2.0 |\\n| 8.0 | 10.1 | 5.8 | 3.04 |\\n| 9.0 | 8.0 | 3.4 | 3.9 |\\n| 10.0 | 4.2 | 1.7 | 3.7 |\\n| 11.0 | 2.6 | 0.76 | 2.4 |\\n| 12.0 | 1.1 | 0.13 | 1.3 |\\n| 13.0 | 0.42 | 0.02 | 0.6 |\\n| 14.0 | 0.10 | 0.00 | 0.05 |\\n| 15.0 | 0.00 | 0.00 | 0.00 |\\n| 16.0 | 0.00 | 0.00 | 0.00 |\\n| 17.0 | 0.00 | 0.00 | 0.00 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An oxygen-enriched surface region is indicated by the sharp O peak at the smallest Z, consistent with terminal oxygen or hydroxyl groups at the outer surface.​​\\n\\nA subsurface region where Al and O peaks overlap suggests a more stoichiometric Al₂O₃ network with coordinated Al–O polyhedra.​​\\n\\nA broader hydrogen profile peaking slightly beyond the main Al region implies surface and near-surface hydroxylation, with hydrogen bonded to oxygen at or just beneath the interface.​​\\n\\nThe decay of all three profiles to near zero at larger Z indicates that the film terminates within the plotted range, with negligible atomic population beyond about 13–14 Å.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Low bulk hydrogen indicates a pure Al₂O₃ lattice with minimal impurity-based charge traps. Hydrogen in oxides can create electronic defects that increase leakage current and reduce dielectric reliability. Therefore, its confinement to the interfaces suggests the functional bulk of the film has high electrical quality.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Initial substrate interface (0 cycles, blue).\\n\\n, Film nucleation and early growth (4 cycles, red).\\n\\n, Thickening and development of a uniform bulk region (8 cycles, green).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The central density is lower and less uniform at 4 cycles, but reaches a stable, high plateau (~1.0 g/cm³) at 8 cycles. The trade-off is between process speed (fewer cycles) and material quality (uniform, dense film). Achieving device-grade films requires more cycles to move past the non-uniform interfacial growth phase.\"}]}]","bbox":[{"panel_id":"b","x":673,"y":8,"width":658,"height":511},{"panel_id":"a","x":4,"y":8,"width":640,"height":509}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1336,"height":520,"image_format":"jpeg","image_sha256":"defbfb81439cbf309103cf62738af71fbf66bd9447fefb392c80ffd5217f15c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_21.jpg","caption":"Figure 21: Heat capacity values $(C_{\\mathrm{v}})$ of various size FNPs [161].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_21","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_21","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart represents the Specific heat capacity (Cv) against temperature for various iron nanoparticles (FNP) with the dimensions (2 nm, 2.5 nm, 3.0 nm, 3.5 nm, and 4.0 nm). Sharp peaks were observed at specific temperatures indicating melting points of the respective particles. This graph illustrates the melting point depression phenomenon, where the melting temperature drops significantly (from 2100 K to 1525 K) as the nanoparticle diameter decreases from 4.0 nm to 2.0 nm. It confirms that smaller particles are thermodynamically less stable and undergo phase transitions at lower thermal energies compared to larger ones.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (K) | 2 nm | 2.5 nm | 3.0 nm | 3.5 nm | 4.0 nm |\\n|---|---|---|---|---|---|\\n| 200 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 400 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 600 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 800 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 1000 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 1200 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 1400 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 1525 | 0.4| 0.0 | 0.0 | 0.0 | 0.0 |\\n| 1600 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 1775 | 0.0 | 0.8 | 0.0 | 0.0 | 0.0 |\\n| 1800 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 1925 | 0.0 | 0.0 | 0.9 | 0.0 | 0.0 |\\n| 2000 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 2050 | 0.0 | 0.0 | 0.0 | 0.6 | 0.0 |\\n| 2100 | 0.0 | 0.0 | 0.0 | 0.0 | 1.6 |\\n| 2200 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 2400 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the catalyst must operate at a significantly lower temperature than expected for bulk iron to prevent deactivation. If the process temperature approaches the depressed melting point of the nanoparticles, they will become mobile and rapidly sinter, destroying the high-surface-area catalyst structure. The operational window is constrained by this size-dependent thermal instability.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Larger nanoparticles have a higher melting point. The sharp Cv peak shifts to higher temperatures as diameter increases from 2 nm to 4 nm. The cause is the surface-to-volume ratio: smaller particles have a larger fraction of surface atoms with lower coordination and higher energy, making the entire lattice less stable and melting at a lower temperature.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"2 nm\\n, 2.5 nm\\n, 3.0 nm\\n, 3.5 nm\\n, 4.0 nm\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For computational efficiency in screening, the potential energy method is often preferred. It requires fewer data points to identify the trend break and avoids the extra step of calculating the derivative, saving time for each simulation run.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":4,"width":636,"height":489}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_21.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_21.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":644,"height":494,"image_format":"jpeg","image_sha256":"c1aeeef03300ca4011c69c4c0f67d75c06df2274ceca9b2d33e7841d56d874ec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_2_fig_4.jpg","caption":"Fig. 4. Plot of the changes in selected bond lengths and distances (Hf-Cl, Hf-O, O-H and Cl-H) along the calculated IRC for the elimination of HCl from $\\mathrm{Si(OH)_3 - OH - HfCl_4}$ complex. The adsorbed complex is on the left, products are on the right, and the TS is set to $S = 0$ amu $^{1 / 2}$ bohr.","id":"train/atomic-layer-deposition/simulation-usecase/2/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/2/fig_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows bond distances (Å) against S((amu)^{1/2}bohr), with four distinct bond types: Hf-Cl, Hf-O, O-H, and Cl-H. Hf-Cl shows a slight increase as the S value increases, while H-O and Cl-H decrease. On the other hand, O-H increases above an S value of -0.5.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| S((amu)^{1/2}bohr) | Hf-Cl | Hf-O | O-H | Cl-H |\\n|---|---|---|---|---|\\n|-2.5 | 2.7 | 2.1 | 1.0 | 2.0 |\\n|-2.0 | 2.7 | 2.1 | 1.0 | 1.9 |\\n|-1.5 | 2.7 | 2.1 | 1.0 | 1.9 |\\n|-1.0 | 2.7 | 2.1 | 1.0 | 1.8 |\\n|-0.5 | 2.8 | 2.1 | 1.1 | 1.7 |\\n|0.0 | 2.8 | 2.1 | 1.4 | 1.5 |\\n|0.5 | 2.8 | 2.1 | 1.6 | 1.4 |\\n|1.0 | 2.8 | 2.0 | 1.7 | 1.3 |\\n|1.5 | 2.8 | 2.0 | 1.9 | 1.3 |\\n|2.0 | 2.8 | 2.0 | 2.0 | 1.3 |\\n|2.5 | 2.9 | 2.0 | 2.1 | 1.3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Changes in bond lenghts are closely related to the transition state (TS).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the S value increases from -2.5 to 2.5, the bond distance decreases for Hf-O and Cl-H, and increases for Hf-Cl and O-H.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Hf-Cl bond has the highest bond distance values close to 2.7 Å.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":657,"height":506}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/Jie Ren et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":661,"height":511,"image_format":"jpeg","image_sha256":"76d755fe27bd88785d2ef9448a9c1eb783e89ddb3e66242a8cdeea5acfe19f1d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_25_figure_4.jpg","caption":"Figure 4. ALD simulations. (A) Height of film growth per cycle and (B) roughness per cycle. Present results compared to Hu et al. The range of growth per cycle commonly observed experimentally is highlighted in yellow.","id":"train/atomic-layer-deposition/simulation-usecase/25/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/25/figure_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the film growth per ALD cycle in Å for two studies, comparing the present study simulation (blue) with the results from Hu et al (red) over 12 cycles. The yellow band marks the experimentally reported growth range (~0.9–1.1 Å/cycle).\"},{\"panel_id\":\"b\",\"text\":\"The line chart displays the surface roughness in Å vs. cycle number for two studies, 'Present Study' and 'Hu et al.', over 12 cycles. The roughness from the present study is less rough.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle | Growth per cycle, Å : Present Study | Growth per cycle, Å: Hu et al. |\\n| --- | --- | --- | \\n| 1 | 1.04 | 0.49 |\\n| 2 | 0.88 | 0.48 |\\n| 3 | 0.83 | 0.54 |\\n| 4 | 0.89 | 0.38 |\\n| 5 | 1.06 | 0.48 |\\n| 6 | 0.76 | 0.59 |\\n| 7 | 1.17 | 0.68 |\\n| 8 | 1.17 | 0.46 |\\n| 9 | 1.00 | 0.49 |\\n| 10 | 1.07 | 0.46 |\\n| 11 | 1.19 | 0.57 |\\n| 12 | 0.97 | 0.45 |\"},{\"panel_id\":\"b\",\"text\":\"| Cycle | Surface Roughness, Å: Present Study | Surface Roughness, Å: Hu et al. |\\n| --- | --- | --- | \\n| 1 | 0.78 | 1.4 |\\n| 2 | 1.13 | 1.5 |\\n| 3 | 1.28 | 1.56; 1.66 |\\n| 4 | 1.31 | 1.73 |\\n| 5 | 1.44 | 1.80 |\\n| 6 | 1.33 | 2.0 |\\n| 7 | 1.35 | 2.0 |\\n| 8 | 1.42 | 1.89 |\\n| 9 | 1.44 | 1.89 |\\n| 10 | 1.36 | 1.70 |\\n| 11 | 1.51 | 1.68 |\\n| 12 | 1.58 | 1.65 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Present study (the values are better aligned with experimental ones, shown as yellow band).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The present study shows higher cycle-to-cycle variability. You can see it from the spread of values: for the present study it ranges from 0.76 Å/cycle (cycle 6) up to 1.19 Å/cycle (cycle 11), a spread of about 0.43 Å/cycle. Hu et al. ranges from 0.38 Å/cycle (cycle 4) to 0.68 Å/cycle (cycle 7), a smaller spread of about 0.30 Å/cycle. From one cycle to the next, the present study has a big jump from 0.76 (cycle 6) to 1.17 (cycle 7) (≈ +0.41), whereas the largest step change in Hu et al. is smaller (e.g., 0.68 → 0.46, ≈- 0.22). So overall, the values fluctuate more in the present study.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Present study (the values for roughness are generally lower than in the study of Hu et al.).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They converge overall (the gap between the two data series decreases).\"}]}]","bbox":[{"panel_id":"a","x":2,"y":1,"width":565,"height":434},{"panel_id":"b","x":572,"y":2,"width":549,"height":434}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/Kristopher S. Brown et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1125,"height":439,"image_format":"jpeg","image_sha256":"7f28e01c0cf2e544c4216dcdcb105d531da2545ec697af84729cbcb2ecc2fa54","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_25_figure_6.jpg","caption":"Figure 6. Predicted and measured alumina ALD coating growths on an alumina (blue) and silica (red) surface. Predictions are depicted by squares and dotted lines. Measurements of Al added on silica $^{47}$ are depicted by red circles and solid lines. Experimental values for Al added over alumina (blue circles and solid lines) inferred from Puurunen's empirical model, $^{45,46}$ which related the number of Al atoms added to surface OH coverage.","id":"train/atomic-layer-deposition/simulation-usecase/25/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/25/figure_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the number of Al atoms added per unit area (Al/nm²) over cycles for both Al2O3 experiment and model, and SiO2 experiment and model. The Al2O3 experiment and model exhibit a more similar trend, while the SiO2 experiment and model deviate more from each other.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle | Al2O3 Experiment | SiO2 Experiment | Al2O3 Model | SiO2 Model |\\n|---|---|---|---|---|\\n| 1 | 2.5 | 4.5 | 2.8 | 2.4 |\\n| 2 | 3.2 | 2.4 | 3.4 | 2.4 |\\n| 3 | 3.4 | 2.7 | 3.2 | 2.1 |\\n| 4 | 3.2 |- | 3.4 | 2.4 |\\n| 5 | 3.6 | - | 3.9 | 2.6 |\\n| 6 | 3.3 | 2.9 | 3.7 | 2.5 |\\n| 7 | 3.3 | - | 3.7 | 2.7 |\\n| 8 | 3.4 | 3.2 | 4.1 | 2.9 |\\n| 9 | 3.4 | - | 3.9 | 3.0 |\\n| 10 | 3.3 | - | 3.9 | 3.1 |\\n| 11 | - | 3.8 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Al2O3 model generally overestimates the predicted values of added Al atoms.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiO2 model generally underestimates the predicted values of added Al atoms.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Considering only the experimental data from cycles 1–3, SiO₂ has the greater total Al atoms deposited per area. Even though its rate drops in cycles 2 and 3, the initial deposition of 4.5 Al/nm² in Cycle 1 outweighs the steady but lower start of the Al₂O₃ surface. Summing those cycles gives SiO₂ = 4.5 + 2.4 + 2.7 = 9.6, while Al₂O₃ = 2.5 + 3.2 + 3.4 = 9.1.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":560,"height":448}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/Kristopher S. Brown et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":564,"height":452,"image_format":"jpeg","image_sha256":"f5a407a091c127d66cc06e86c5cb3ed5aded9b8b5e6a58cd66b97f46ad9482a9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_25_figure_7.jpg","caption":"Figure 7. CLD simulations. (A) Cumulative height growth and (B) roughness per cycle.","id":"train/atomic-layer-deposition/simulation-usecase/25/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/25/figure_7","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the growth per cycle for two methods, CLD (blue) and ALD (red), over ten cycles. CLD growth is less uniform than ALD under the conditions shown.\"},{\"panel_id\":\"b\",\"text\":\"The line chart displays the surface roughness for two methods, CLD and ALD, over cycles. CLD (blue) exhibits a progressive roughening trend, ALD (red) remains roughly constant .\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle | Growth per cycle, A: ALD | Growth per cycle, A: CLD |\\n|---|---|---|\\n| 1 | 1.0 | 0.2 |\\n| 2 | 0.9 | 0.9 |\\n| 3 | 0.8 | 1.5 |\\n| 4 | 0.9 | 0.2 |\\n| 5 | 1.1 | 1.0 |\\n| 6 | 0.8 | -0.8 |\\n| 7 | 1.1 | 0.5 |\\n| 8 | 1.1 | 4.7 |\\n| 9 | 0.9 | 0.4 |\\n| 10 | 1.1 | 1.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Cycle | Surface Roughness, A: ALD| Surface Roughness, A: CLD|\\n|---|---|---|\\n| 0 | - | 0.7 |\\n| 1 | 0.8 | 1.2 |\\n| 2 | 1.1 | 2.2 |\\n| 3 | 1.2 | 3.5 |\\n| 4 | 1.3 | 3.8 |\\n| 5 | 1.5 | 5.0 |\\n| 6 | 1.3 | 3.7 |\\n| 7 | 1.2 | 4.2 |\\n| 8 | 1.4 | 8.5 |\\n| 9 | 1.4 | 7.3 |\\n| 10 | 1.3 | 8.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The CLD process eventually switches from deposition to etching mode. The growth per cycle for CLD drops below zero at cycle 6, indicating a negative growth rate. A negative value for growth per cycle physically means the removal of material from the surface rather than addition.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ALD (GPC remains roughly constant).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ALD (surface roughness is relatively constant).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ALD (surface roughness is lower).\"}]}]","bbox":[{"panel_id":"a","x":0,"y":1,"width":509,"height":322},{"panel_id":"b","x":519,"y":0,"width":472,"height":323}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/Kristopher S. Brown et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":995,"height":325,"image_format":"jpeg","image_sha256":"53961ccd7e23d3eeafbc5a5ac870874c0ee15308bdf7ade0fb1a4b0f59e2691a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_25_figure_8.jpg","caption":"Figure 8. Effect of different injection stoichiometries. (A) Cumulative height growth per cycle and (B) roughness per cycle. Blue: base case. Red: half amount of water injected per cycle.","id":"train/atomic-layer-deposition/simulation-usecase/25/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/25/figure_8","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the growth per cycle over 10 cycles for two conditions: the base case and a process using half the H₂O injected per cycle. The base case remains low and fairly steady. In contrast, halving the H₂O dose produces highly unstable growth, with large cycle-to-cycle fluctuations.\"},{\"panel_id\":\"b\",\"text\":\"The chart illustrates the surface roughness over 10 cycles for two conditions: the base case and a process using half the H₂O injected per cycle. The base case remains relatively smooth, showing a slow increase in roughness over cycling. The half-H₂O condition exhibits significant increases in surface roughness.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle | Growth per cycle, Å (Base case) | Growth per cycle, Å (Half H₂O amount injected per cycle) |\\n|---|---|---|\\n| 1 | 0.98 | 3.07 |\\n| 2 | 1.22 | 5.64 |\\n| 3 | 1.96 | 2.57 |\\n| 4 | 0.98 | 18.77 |\\n| 5 | 1.59 | 25.15 |\\n| 6 | 0 | 3.31 |\\n| 7 | 1.22 | 47.8 |\\n| 8 | 5.27 | 9.44 |\\n| 9 | 0.85 | 3.55 |\\n| 10 | 1.47 | 32.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Cycle | Surface Roughness, Å (Base case) | Surface Roughness, Å (Half H₂O amount injected per cycle) |\\n|---|---|---|\\n| 0 | 1.17 | 1.17 |\\n| 1 | 1.76 | 4.5 |\\n| 2 | 2.35 | 10 |\\n| 3 | 4.11 | 12.35 |\\n| 4 | 4.51 | 29.01 |\\n| 5 | 5.49 | 38.23 |\\n| 6 | 3.72 | 43.13 |\\n| 7 | 4.51 | 67.84 |\\n| 8 | 8.63 | 64.90 |\\n| 9 | 7.45 | 67.25 |\\n| 10 | 8.43 | 72.15 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Halving the H₂O dose makes the growth much less stable from cycle to cycle. In the base case, the growth per cycle stays low and fairly consistent, with only small fluctuations across the 10 cycles. With half H₂O, the growth becomes unstable, showing large swings. So the reduced H₂O dose breaks the steady, repeatable growth behavior.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To obtain smooth films, the base-case (stoichiometric) dosing should be selected. The base case maintains a consistently low surface roughness (below 10 Å ) throughout the sequence. By contrast, the half-H₂O condition exhibits a rapid and substantial increase in roughness, reaching over 70 Å by the end of the measurement. Overall, this behavior is consistent with the development of a rough surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Using substoichiometric (insufficient) amounts of H₂O leads to surface roughening.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":1,"width":476,"height":345},{"panel_id":"b","x":497,"y":2,"width":487,"height":342}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/Kristopher S. Brown et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":986,"height":347,"image_format":"jpeg","image_sha256":"176d23f8cc67aee84c18387b5ab1e29898052e19146dbb289a09c646d2bfd722","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_11.jpg","caption":"Figure 11. Coverage (\\%) versus rotation speed (rad/s) for (a) Hacac step, (b) BDEAS step, and (c) ozone step. $x_{A}$ , $x_{B}$ , and $x_{C}$ represents the mole fraction of Hacac, BDEAS, and ozone, respectively.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_11","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_11","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Hacac surface coverage (%) as a function of wafer rotation speed at different reactant mole fractions, showing a general decrease with increasing rotation speed. Coverage remains nearly full at low speeds even for lower mole fractions.\"},{\"panel_id\":\"b\",\"text\":\"BDEAS surface coverage (%) as a function of wafer rotation speed at different reactant mole fractions, showing sharper decreases at higher rotation speeds due to its noncompetitive kinetic mechanism, producing steeper and somewhat discontinuous curves.\"},{\"panel_id\":\"c\",\"text\":\"Ozone surface coverage (%) as a function of wafer rotation speed at different reactant mole fractions, generally decreasing with increasing rotation speed, with nearly full coverage at low speeds even for lower mole fractions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Rotation speed (rad/s)|xHacac = 0.05|xHacac = 0.1|xHacac = 0.3|\\n|-----------------------|-------------|------------|------------|\\n|0.2|100|100|100|\\n|0.3|98.8|99.5|100|\\n|0.4|97.5|98.7|100|\\n|0.5|96.2|97.8|99.5|\\n|0.6|95.1|96.5|100|\\n|0.7|94.0|95.2|99.8|\\n|0.8|92.8|94.0|99.5|\"},{\"panel_id\":\"b\",\"text\":\"| Rotation speed (rad/s)|xBDEAS = 0.05|xBDEAS = 0.1|xBDEAS = 0.3|\\n|-----------------------|-------------|------------|------------|\\n|0.2|100|100|100|\\n|0.3|97.5|98.5|100|\\n|0.4|95.0|97.0|99.2|\\n|0.5|92.0|95.0|98.0|\\n|0.6|89.5|93.0|97.5|\\n|0.7|87.0|91.5|97.0|\\n|0.8|85.0|90.0|96.5|\"},{\"panel_id\":\"c\",\"text\":\"| Rotation speed (rad/s)|xO3 = 0.05|xO3 = 0.1|xO3 = 0.3|\\n|-----------------------|----------|---------|---------|\\n|0.2|100|100|100|\\n|0.3|98.8|99.5|100|\\n|0.4|97.5|98.7|100|\\n|0.5|96.2|97.8|99.5|\\n|0.6|95.1|96.5|100|\\n|0.7|94.0|95.2|99.8|\\n|0.8|92.8|94.0|99.5|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The coverage versus rotation speed data helps identify optimal operating conditions for the ASALD process. By selecting lower rotation speeds or higher reagent mole fractions, full surface coverage can be achieved for Hacac, BDEAS, and ozone steps. Understanding the steep coverage decrease for BDEAS allows engineers to adjust the mole fraction or rotation speed to avoid incomplete coverage. These insights ensure uniform thin film deposition, efficient reagent use, and controlled reaction kinetics, which are critical for producing high-quality films with predictable thickness and surface properties.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The BDEAS step shows the steepest decrease in coverage, attributed to its noncompetitive kinetic mechanism.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Higher rotation speeds decrease the exposure time of the wafer to the reagents, resulting in lower surface coverage.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Wafer rotation speed (lower speeds increase coverage), Mole fraction of the reagent (higher mole fractions increase coverage), Kinetic mechanism of the reaction (e.g., noncompetitive behavior of BDEAS), Exposure time of the wafer to the reagent\"}]}]","bbox":[{"panel_id":"a","x":5,"y":9,"width":500,"height":388},{"panel_id":"b","x":550,"y":9,"width":507,"height":393},{"panel_id":"c","x":273,"y":480,"width":508,"height":382}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1058,"height":906,"image_format":"jpeg","image_sha256":"ff4736023581f073bdff3e17588470107b22883f6601c3ba0a35027261eb65ec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_11.jpg","caption":"Figure 11. Energetics for the bound reactants (BR), transition state (TS), bound products (BP) and unbound products (UP) relative to the unbound reactants (UR) for the reaction of $\\mathrm{SiH}_2(\\mathrm{NH}_2)_2$ (triangles, dashed lines), $\\mathrm{SiH}_2\\mathrm{DMA}_2$ (squares, solid lines) with the cluster models $(\\mathrm{Si}_3\\mathrm{N}_4)_4(\\mathrm{NH}_3)_{12}$ (red) and $(\\mathrm{Si}_3\\mathrm{N}_4)_4(\\mathrm{H}_2\\mathrm{O})_{12}$ (green). The table inset presents the $E_{\\mathrm{act}}$ values for the precursors with the $\\mathrm{NH}_2$ and OH covered surfaces. $\\Delta E$ values are given in $\\mathrm{kJ / mol}$ and were determined from BP86/SV(P) DFT calculations.","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_11","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_11","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the energy changes ($\\\\Delta E$ in kJ/mol) for two compounds, SiH2(NH2)2 and SiH2DMA2, across four stages: UR, BR, TS, BP, and UP. The chart also includes surface types (NH2 and OH) for comparison.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Step | SiH₂(NH₂)₂ on NH₂ Surface | SiH₂DMA₂ on NH₂ Surface | SiH₂(NH₂)₂ on OH Surface | SiH₂DMA₂ on OH Surface |\\n|------|---------------------------|--------------------------|---------------------------|--------------------------|\\n| UR | 0 | 0 | 0 | 0 |\\n| BR | -10 | -30 | -65 | -50 |\\n| TS | +70 | +70 | +10 | 0 |\\n| BP | 20 | 20 | -30 | -80 |\\n| UP | 5 | 5 | -90 | -50 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The activation energies for the precursors are as follows\\n1. SiH₂(NH₂)₂ on NH₂ Surface = 98.29 kJ/mol\\n2. SiH₂(NH₂)₂ on OH Surface = 79.13 kJ/mol\\n3. SiH₂DMA₂ on NH₂ Surface = 79.97 kJ/mol\\n4. SiH₂DMA₂ on OH Surface = 51.74 kJ/mol\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The larger steric interactions experienced by SiH2DMA2 with the amine-covered surface compared with the hydroxyl-covered surface destabilize BR. The same steric interactions explain the weaker adsorption by SiH2DMA2 relative to SiH2(NH2)2 on both substrates\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The higher energy of BR reflects a reduced bond strength of the precursor to the surface. This may increase the probability of the precursor returning unreacted to the gas phase at ALD temperatures and may prevent the remaining reaction steps occurring. This initial BR step is therefore crucial in determining the deposition rate of a\\nprecursor and was chosen as a metric for ALD reactivity of other potential precursors.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Overall, SiH₂(NH₂)₂ and SiH₂DMA₂ on NH₂ Surface have higher energy for all the states compared to OH surface\"}]}]","bbox":[{"panel_id":"a","x":2,"y":1,"width":664,"height":492}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":670,"height":497,"image_format":"jpeg","image_sha256":"f3508ff53dc22c869775ead69ef7bd79099d9c9bf2f24f14eb43883fcfa8a8cc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_6.jpg","caption":"Figure 6. $\\Delta E$ for the hydrolysis $\\mathrm{(YH = H_2O)}$ and amination $\\mathrm{(YH =}$ $\\mathrm{NH_3}$ ) of various silicon precursors calculated using eqs 1a and 1b from BP86/TZVPP total energies.","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure plots the change in energy (ΔE) in kJ/mol for various compounds when interacting with H2O and NH3.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Precursor | ΔE (kJ/mol) with H₂O | ΔE (kJ/mol) with NH₃ |\\n|------------------|------------------------|------------------------|\\n| SiH₂Cl₂ | 0 | +45 |\\n| SiH₂DMA₂ | -30 | 0 |\\n| SiH₂HFMA₂ | -60 | -20 |\\n| SiH₂EMA₂ | -50 | 0 |\\n| BDEAS | -55 | -2 |\\n| BTBAS | -60 | -10 |\\n| SiH₂CH₃ | -110 | -70 |\\n| SiH₄ | -80 | -30 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ΔEhyd was significantly more negative than ΔEamin by 47.14 kJ/mol. This value |ΔE| corresponds to the reaction SiH2(NH2)2 + 2H2O ↔ SiH2(OH)2 + 2NH3).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The difference ΔE between hydration and amination means that functional group elimination from difunctionalized silane precursors is thermodynamically more favorable on OH covered SiO2 surfaces than on NH2/NH-covered Si3N4 surfaces. This appears to correlate with the much slower ALD growth rates for silicon nitride compared with silicon dioxide.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. SiH₂Cl₂ \\n2. SiH₂DMA₂ \\n3. SiH₂HFMA₂ \\n4. SiH₂EMA₂ \\n5. BDEAS \\n6. BTBAS \\n7. SiH₂CH₃ \\n8. SiH₄\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":1,"y":0,"width":657,"height":500}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":661,"height":502,"image_format":"jpeg","image_sha256":"6b6043be3c97e6ceb854c5dfac75a54805d0742486eabe502b80192f78bfe65e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_8.jpg","caption":"Figure 8. Energetics for the bound reactants (BR), transition state (TS), bound products (BP) and unbound products (UP) relative to the unbound reactants (UR) for the reaction of (a) $\\mathrm{SiH}_2(\\mathrm{NH}_2)_2$ and (b) $\\mathrm{SiH}_2\\mathrm{DMA}_2$ precursor with the surface group models $\\mathrm{SiH}_3\\mathrm{-OH}$ (red diamonds), $\\mathrm{SiH}_3\\mathrm{-NH}_2$ (green squares), and $\\mathrm{SiH}_3\\mathrm{-NH - SiH}_3$ (blue triangles). $\\Delta E$ values are given in $\\mathrm{kJ / mol}$ and were determined using BP86/SV(P) DFT calculations.","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_8","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart displays changes in ΔE (kJ/mol) for SiH2(NH2)2 on surface of three different species (SiH3-OH, SiH3-NH2, SiH3-NH-SiH3) across five states (UR, BR, TS, BP, UP).\"},{\"panel_id\":\"b\",\"text\":\"The line chart shows changes in ΔE (kJ/mol) for SiH2DMA2 precursor on surface of three different species (SiH3-OH, SiH3-NH2, SiH3-NH-SiH3) across five states (UR, BR, TS, BP, UP).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Step | SiH₃–OH | SiH₃–NH₂ | SiH₃–NH–SiH₃ |\\n|------|---------|----------|--------------|\\n| UR | 0 | 0 | 0 |\\n| BR | -40 | -20 | -15 |\\n| TS | +80 | +60 | +70 |\\n| BP | -60 | -30 | -25 |\\n| UP | -80 | -10 | -5 |\"},{\"panel_id\":\"b\",\"text\":\"| Step | SiH₃–OH | SiH₃–NH₂ | SiH₃–NH–SiH₃ |\\n|------|---------|----------|--------------|\\n| UR | 0 | 0 | 0 |\\n| BR | -35 | -18 | -15 |\\n| TS | +75 | +55 | +65 |\\n| BP | -55 | -28 | -25 |\\n| UP | -75 | -12 | -8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reactions leading to BR, BP and UP (optimized to local minima) on the SiH3−OH model surface were calculated to be more exothermic than those on the SiH3−NH2 and SiH3−NH−SiH3 systems, consistent with the results of the thermodynamic model\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"These calculations ignored temperature effects that may reduce the significance of these energy differences.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ΔE values for the SiH3−NH2 and SiH3−NH−SiH3 models were almost identical, indicating the similar chemistry of primary (NH2) and secondary (NH) amine\\ngroups. The transition state energy barriers or activation energies for SiH2(NH2)2 and SiH2DMA2 are quite similar to Eact for both precursors, with the SiH3−OH substrate lower than with SiH3−NH2/SiH3−NH−SiH3 substrates.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":0,"width":370,"height":458},{"panel_id":"b","x":367,"y":0,"width":300,"height":456}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":672,"height":458,"image_format":"jpeg","image_sha256":"03233352f6788668f7bf9ed6569b5e68946b530baaf5fa095e66b178171bebe6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_10.jpg","caption":"Figure 10. The evolution of the growth rate during the $\\mathrm{Al}_2\\mathrm{O}_3$ ALD starting with two different initial $-\\mathrm{OH}$ concentrations at $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_10","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Growth per cycle is plotted against ALD cycles. Higher initial OH gives higher growth from the start. Lower OH shows slow early growth and gradual increase.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycles | Growth per cycle (Å), H: 6% | Growth per cycle (Å), H: 0.5% |\\n|---|---|---|\\n| 1 | ~0.50 | ~0.10 |\\n| 2 | ~0.50 | ~0.10 |\\n| 3 | ~0.55 | ~0.15 |\\n| 4 | ~0.40 | ~0.15 |\\n| 5 | ~0.50 | ~0.20 |\\n| 6 | ~0.60 | ~0.20 |\\n| 7 | ~0.70 | ~0.30 |\\n| 8 | ~0.46 | ~0.40 |\\n| 9 | ~0.50 | ~0.30 |\\n| 10 | ~0.46 | ~0.45 |\\n| 11 | ~0.56 | ~0.30 |\\n| 12 | ~0.46 | ~0.40 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Fewer OH groups limit precursor adsorption in early cycles. Reactive sites must form gradually through repeated ALD reactions. Thus, low initial OH lead to suppressed early-cycle growth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 6% OH condition.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies a higher density of reactive OH sites. More sites allow more precursor reactions per cycle, increasing growth efficiency.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure indicates that increasing or stabilizing initial OH coverage can reduce incubation effects and improve early-cycle growth uniformity. Process steps such as surface pre-treatment or controlled exposure conditions could be used to achieve this. Understanding the cycle-dependent fluctuations also helps in selecting suitable cycle counts to obtain consistent film thickness.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":6,"width":625,"height":558}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":633,"height":567,"image_format":"jpeg","image_sha256":"a08b54146b90f05f2ab9da5f67e697a503619e712774d06376f2104107a67b7f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_11.jpg","caption":"Figure 11. The evolution of the surface roughness during the $\\mathrm{Al}_2\\mathrm{O}_3$ ALD starting with two different initial $-\\mathrm{OH}$ concentrations at $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_11","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_11","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows surface roughness during Al₂O₃ ALD at 300 °C. High initial OH gives an early roughness peak and later smoothing. Low initial OH shows steady roughness increase with cycle number.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycles | Roughness (Å), H: 6% | Roughness (Å), H: 0.5% |\\n|---|---|---|\\n| 1 | ~1.40 | ~0.95 |\\n| 3 | ~1.55 | ~1.00 |\\n| 5 | ~1.80 | ~1.30 |\\n| 6 | ~2.00 | ~1.40 |\\n| 8 | ~1.90 | ~1.85 |\\n| 9 | ~1.88 | ~1.85 |\\n| 11 | ~1.70 | ~1.95 |\\n| 12 | ~1.65 | ~2.05 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"When starting from a high OH concentration, surface roughness increases rapidly during early ALD cycles due to active growth and then decreases as the surface becomes more uniformly covered. In contrast, a low OH concentration leads to a slower but more continuous buildup of roughness as reactive sites gradually form. This indicates that initial surface chemistry strongly influences how roughness develops over time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The high-OH case shows a non-monotonic trend with a clear maximum in roughness at intermediate cycles followed by a decline. By comparison, the low-OH case shows a largely monotonic increase in roughness that continues into later cycles. These contrasting trends suggest different dominant growth and relaxation mechanisms depending on initial OH coverage.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The relationship implies that higher OH coverage initially promotes more uniform nucleation and surface reactions, eventually smoothing the surface as growth proceeds. Lower OH coverage delays uniform nucleation, leading to rougher and more heterogeneous surface structures over time. Thus, surface hydroxylation is closely tied to morphological evolution during ALD.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The trends suggest that higher initial OH concentrations can help limit long-term surface roughness by promoting more uniform growth after early cycles. Process strategies such as surface pre-treatment or controlled OH generation could therefore improve film smoothness. Monitoring roughness evolution also helps determine optimal cycle numbers to avoid roughness buildup at later stages.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":5,"width":620,"height":534}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":625,"height":542,"image_format":"jpeg","image_sha256":"78ee70080700c7a570b35d68c97d8fd9be3ab4419b0d3a7e783f1c8400d7fd25","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_12.jpg","caption":"Figure 12. The evolution of the surface $-\\mathrm{OH}$ concentration during the ALD process at two different temperatures.","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_12","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows how surface −OH concentration increases during ALD. The increase is faster at 300 °C than at 150 °C. Higher temperature leads to much higher −OH coverage.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycles | –OH concentration (nm⁻²), 150 °C | –OH concentration (nm⁻²), 300 °C |\\n|---|---|---|\\n| 0 | 0.10 | ~0.10 |\\n| 1 | 0.18 | ~0.20 |\\n| 2 | 0.20 | ~0.25 |\\n| 3 | 0.30 | ~0.40 |\\n| 4 | 0.48 | ~0.60 |\\n| 5 | 0.60 | ~0.90 |\\n| 6 | 0.70 | ~1.10 |\\n| 7 | 0.95 | ~1.50 |\\n| 8 | 1.20 | ~1.80 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cycle 1.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The strong temperature dependence indicates that surface hydroxylation is facilitated by thermally activated mechanisms such as ligand removal and reactive site formation. At 300 °C, these processes proceed more efficiently, creating a higher density of reactive –OH groups that can participate in subsequent ALD reactions. Thus, the evolving surface structure at elevated temperature enhances the reactivity and continuity of the ALD growth process.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 0.6 nm⁻².\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":638,"height":602}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":642,"height":609,"image_format":"jpeg","image_sha256":"56a10d61b3c9508f33c678f6119e03049873774035d463c4a2d8f96a94f0360d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_13.jpg","caption":"Figure 13. The evolution of the surface roughness during the ALD process at two different temperatures.","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_13","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_13","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows growth per cycle during ALD at 150 °C and 300 °C. Growth decreases during the first few cycles at both temperatures. After this, growth increases with cycle number. The increase is stronger at 300 °C than at 150 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycles | Growth per cycle (Å), 150 °C | Growth per cycle (Å), 300 °C |\\n|---|---|---|\\n| 1 | ~0.11 | ~0.08 |\\n| 2 | ~0.04 | ~0.07 |\\n| 3 | ~0.03 | ~0.15 |\\n| 4 | ~0.10 | ~0.13 |\\n| 5 | ~0.10 | ~0.18 |\\n| 6 | ~0.14 | ~0.17 |\\n| 7 | ~0.23 | ~0.30 |\\n| 8 | ~0.21 | ~0.38 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The incubation (or nucleation) stage.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around cycle 7.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Slower formation of reactive surface sites\\n-Reduced reaction kinetics at lower temperature\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure suggests that higher temperatures can be used to achieve faster growth once incubation effects are overcome, which may be beneficial for throughput-sensitive applications. Conversely, lower temperatures may be chosen when finer control over early growth is required. Understanding the trade-off between incubation behavior and steady-state growth helps optimize temperature selection for specific film quality and performance goals.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":5,"width":627,"height":513}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":633,"height":520,"image_format":"jpeg","image_sha256":"9638180a763924e0e914e26a392303ede66688acbceff86abca8e2544eb82067","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_3.jpg","caption":"Figure 3. Total density profiles after zero (blue), four (red) and eight (green) ALD cycles as a function of the distance along the $Z$ direction of the $\\mathrm{Al}_2\\mathrm{O}_3$ film at $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents total density profiles along the Z direction of an Al₂O₃ film after 0, 4, and 8 ALD cycles. All three profiles show a high initial density near the substrate interface, followed by a rapid decrease and a secondary peak around 5–7 Å. With increasing ALD cycles, the density extends further into the film, producing broader and more gradual decay profiles. The L8 curve maintains higher density values at larger Z distances, indicating thicker and more fully developed film growth compared with L0 and L4.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Z (Å) | Density L0 (g/cm³) | Density L4 (g/cm³) | Density L8 (g/cm³) |\\n|---|---|---|---|\\n| 3 | 1.15 | 1.15 | 1.15 |\\n| 4 | 0.58 | 0.58 | 0.58 |\\n| 5 | 0.65 | 0.63 | 0.61 |\\n| 6 | 0.80 | 0.87 | 0.85 |\\n| 7 | 0.56 | 0.70 | 0.70 |\\n| 8 | 0.25 | 0.58 | 0.68 |\\n| 9 | 0.10 | 0.38 | 0.58 |\\n| 10 | 0.03 | 0.20 | 0.50 |\\n| 11 | 0.00 | 0.10 | 0.40 |\\n| 12 | 0.00 | 0.05 | 0.30 |\\n| 13 | 0.00 | 0.00 | 0.18 |\\n| 14 | 0.00 | 0.00 | 0.10 |\\n| 15 | 0.00 | 0.00 | 0.00 |\\n| 17 | 0.00 | 0.00 | 0.00 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the number of ALD cycles systematically shifts the density profiles outward along the Z direction and broadens their shapes. L0 shows the steepest decay, indicating a thinner initial film, whereas L4 and especially L8 retain significant density at larger Z values. The secondary peak present in all curves becomes more pronounced and moves slightly outward as the film grows. Overall, the progression from L0 to L8 reflects the accumulation of material and the development of a thicker, more homogeneous oxide layer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A locally dense atomic layer or sublayer within the growing Al₂O₃ film.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A broader density distribution suggests a more extended and uniformly packed film, which may enhance barrier properties such as moisture resistance, dielectric strength, and mechanical stability. Greater density retention at larger Z distances indicates fewer voids or low-density regions, contributing to improved film continuity. These characteristics generally lead to better long-term performance in applications where conformal coverage and structural integrity are critical.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- The steepness of the initial density decay, indicating early nucleation efficiency.\\n- The height and location of the secondary peak, reflecting sublayer formation.\\n- The extent of density at larger Z values, showing how far the film has grown.\\n- Differences between L0, L4, and L8 that reveal transition from initial nucleation to steady-state growth.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":614,"height":497}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":619,"height":500,"image_format":"jpeg","image_sha256":"e9d597c02aa42f1af5fdb12e95a58860d6cf89293f561d81b15ffb96324d3cbc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_4.jpg","caption":"Figure 4. Number density profiles for O, Al and H as a function of the distance along the $Z$ direction of the $\\mathrm{Al}_2\\mathrm{O}_3$ film at $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows number-density profiles of O, Al, and H atoms across the Z direction of an Al2O3 film at 300 °C. Oxygen exhibits the highest and most structured density distribution near the film surface, with prominent peaks indicating layered arrangements. Aluminum shows a similar but slightly shifted density profile with a lower overall magnitude. Hydrogen appears in much smaller concentrations and peaks closer to the mid-film region before tapering off. Together these profiles describe the atomic layering and composition variation within the film thickness.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Z (Å) | O density (nm⁻³) | Al density (nm⁻³) | H density (nm⁻³) |\\n|----|----|----|----|\\n| 3 | 14.0 | 17.0 | 0.5 |\\n| 4 | 15.0 | 4.0 | 0.5 |\\n| 5 | 10.0 | 8.0 | 1.5 |\\n| 6 | 15.5| 10.0 | 1.5 |\\n| 7 | 13.0 | 8.0 | 2.0 |\\n| 8 | 10.0 | 6.0 | 3.0 |\\n| 9 | 8.0 | 4.0 | 4.0 |\\n| 10 | 4.0 | 2.0 | 4.0 |\\n| 11 | 3.0 | 1.0 | 3.0 |\\n| 12 | 2.0 | 0.0 | 2.0 |\\n| 13 | 0.5| 0.0 | 1.0 |\\n| 14 | 0.0 | 0.0 | 0.0 |\\n| 15 | 0.0 | 0.0 | 0.0 |\\n| 16 | 0.0 | 0.0 | 0.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 6 Å.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, after approximately Z = 11 Å, the H density remains positive while O drops toward zero.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"None; all densities have reached 0 nm⁻³ by this distance.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- The relative heights and positions of the O and Al peaks, indicating layered ordering.\\n- The full width and decay behavior of the density tails as Z increases.\\n- The presence and magnitude of hydrogen density, as it reflects realistic surface hydroxylation or defect levels.\\n- The overall stoichiometric consistency inferred from integrated densities.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":614,"height":494}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":620,"height":497,"image_format":"jpeg","image_sha256":"bf21daf84048bc60fab6ead4ea4c3ebefe2f416ad1bc1eb97dda0f35b4de9dde","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_5.jpg","caption":"Figure 5.Ratio of Al[4]/Al[3] after zero (blue), four (red) and eight (green) ALD cycles as a function of the distance along the $Z$ direction of the $\\mathrm{Al}_2\\mathrm{O}_3$ film at $300^{\\circ}\\mathrm{C}$","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_5","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the ratio of four-fold to three-fold coordinated aluminum (Al[4]/Al[3]) as a function of depth (Z direction) in an Al2O3 film after 0, 4, and 8 ALD cycles at 300 °C. The ratio is lowest and rapidly decays with depth for L0, indicating limited tetrahedral coordination. With increasing ALD cycles (L4 and L8), the Al[4]/Al[3] ratio increases significantly near the surface and exhibits pronounced oscillations, followed by a sharp decrease toward the film interior. This suggests cycle-dependent structural evolution of aluminum coordination across the film thickness.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Z (Å) | Al[4]/Al[3] (L0) | Al[4]/Al[3] (L4) | Al[4]/Al[3] (L8) |\\n|---|---|---|---|\\n| 5 | 5.0 | 5.0 | 10 |\\n| 6 | 3.0 | 6.2 | 13 |\\n| 7 | 2.5 | 7.5 | 16 |\\n| 8 | 2.0 | 10.0 | 14.5 |\\n| 9 | 1.5 | 8.5 | 21 |\\n| 10 | 0.0 | 7.5 | 16 |\\n| 11 | 0.0 | 7.5 | 11.5 |\\n| 12 | - | 10.0 | 18.5 |\\n| 13 | — | 0.0 | 6.0 |\\n| 14–16 | — | — | 3 → ~0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Eight ALD cycles (L8).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- Increased tetrahedral aluminum coordination\\n- Higher network connectivity\\n- Surface regions closer to bulk-like Al2O3 structure\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Depth-dependent coordination provides insight into how film structure develops during ALD and how surface reactions propagate inward. Variations in Al coordination affect film density, chemical stability, and dielectric behavior. Understanding these trends helps optimize ALD cycle numbers and processing conditions for applications requiring controlled structural and functional properties.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":5,"width":630,"height":541}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":637,"height":547,"image_format":"jpeg","image_sha256":"b9a4f191183b7b67300980b21366e05261a28ed9045e05f6a48be0ff27af0198","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_6.jpg","caption":"Figure 6.Ratio of O[3]/O[2] after zero (blue), four (red) and eight (green) ALD cycles as a function of the distance along the $Z$ direction of the $\\mathrm{Al}_2\\mathrm{O}_3$ film at $300^{\\circ}\\mathrm{C}$","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the ratio of three-fold to two-fold coordinated oxygen (O[3]/O[2]) as a function of depth in an Al2O3 film after 0, 4, and 8 ALD cycles at 300 °C. For all cases, the ratio is highest near the surface and decreases rapidly toward the film interior. Increasing ALD cycles shift the O[3]/O[2] distribution to higher values and extend the depth range over which three-fold coordination persists, indicating progressive structural densification near the surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Z (Å) | O[3]/O[2] (L0) | O[3]/O[2] (L4) | O[3]/O[2] (L8) |\\n|---|---|---|---|\\n| 5 | 1.0 | 1.20 | 1.00 |\\n| 6 | 1.1 | 1.55 | 1.90 |\\n| 7 | 1.0 | 1.70 | 2.10 |\\n| 8 | 0.7 | 1.20 | 1.65 |\\n| 9 | 0.35 | 0.75 | 1.60 |\\n| 10 | 0.2 | 0.80 | 1.30 |\\n| 11 | 0.0 | 0.30 | 1.00 |\\n| 12 | 0.0 | 0.20 | 0.80 |\\n| 13 | 0.0 | 0.00 | 0.50 |\\n| 14–16 | — | 0.00 | 0.1 → 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Eight ALD cycles (L8).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- Higher prevalence of three-fold coordinated oxygen\\n- Increased network connectivity\\n- More bulk-like oxide bonding configuration\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Oxygen coordination directly influences film density, mechanical stability, and dielectric properties of Al2O3. Variations in O[3]/O[2] with depth reveal how surface reactions evolve during ALD and how structural relaxation progresses into the film. Such insight is essential for designing ALD processes that produce uniform, high-quality oxide layers for electronic and protective applications.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":633,"height":547}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":639,"height":553,"image_format":"jpeg","image_sha256":"9ad86218129a364f324af35cd994404f7671dd5fc6017440b973c2bd8cf39998","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_9.jpg","caption":"Figure 9. The evolution of the surface $-\\mathrm{OH}$ concentration during the $\\mathrm{Al}_2\\mathrm{O}_3$ ALD starting with two different initial $-\\mathrm{OH}$ concentrations at $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_9","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the evolution of surface –OH concentration during Al2O3 ALD at 300 °C for two different initial –OH surface coverages. For the high initial –OH case (6.0%), the surface concentration increases rapidly during early cycles and then approaches a plateau near 5 nm⁻². In contrast, the low initial –OH case (0.5%) exhibits a slower but continuous increase throughout the ALD cycles, eventually reaching much lower values than the high-OH surface. This highlights the strong influence of initial surface chemistry on hydroxyl regeneration behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycles | –OH concentration (nm⁻²), H: 6.0% | –OH concentration (nm⁻²), H: 0.5% |\\n|---|---|---|\\n| 1 | 2.8 | 0.2 |\\n| 3 | 3.8 | 0.4 |\\n| 5 | 4.0 | 0.9 |\\n| 7 | 4.6 | 1.4 |\\n| 8 | 4.9 | 1.8 |\\n| 9 | 4.9 | 2.0 |\\n| 10 | 4.9 | 2.6 |\\n| 12 | 5.1 | 3.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The surface starting with 6.0% initial –OH concentration.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- Rapid increase during early ALD cycles\\n- Reduced slope at intermediate cycles\\n- Nearly constant –OH concentration at later cycles\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Surface –OH groups act as key reactive sites for precursor adsorption during ALD. Knowing how their concentration evolves helps in predicting growth rates, incubation behavior, and surface reactivity over multiple cycles. This information is critical for selecting surface pre-treatments and process conditions that lead to uniform and controlled film growth.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":5,"width":629,"height":555}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":634,"height":562,"image_format":"jpeg","image_sha256":"adabac16ae58d7da622ad22875ab5d96f7bb59d475f7a0f7b083623f2f392ef1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_15.jpg","caption":"Figure 15. Fraction of lattice site vacant at the end of the simulation after $2 \\mathrm{~s}$ of deposition (10 cycles). It is evident that the film growth is slow at low temperature (blue) because the lattice sites are occupied only up to a $9 \\mathrm{\\AA}$ thickness. At slightly higher temperatures, the film grows faster but the deposited film contains many defects and has a lower density of atoms than a bulk $\\mathrm{ZnO}$ . The fraction of defects decreases with increasing temperature.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_15","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_15","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the fraction of vacant lattice sites along the z-axis at various temperatures. Where the different temperatures result in different profiles also related to GPC.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| z-axis / angstrom | 27 °C | 52 °C | 77 °C | 127 °C | 177 °C |\\n|---|---|---|---|---|---|\\n| 0.00 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 5.00 | 0.60 | 0.30 | 0.28 | 0.25 | 0.20 |\\n| 10.00 | 0.75 | 0.28 | 0.25 | 0.15 | 0.15 |\\n| 15.00 | 0.95 | 0.40 | 0.25 | 0.15 | 0.15 |\\n| 20.00 | 1.00 | 0.70 | 0.25 | 0.15 | 0.15 |\\n| 25.00 | 1.00 | 0.95 | 0.50 | 0.15 | 0.15 |\\n| 30.00 | 1.00 | 1.00 | 0.95 | 0.75 | 0.75 |\\n| 35.00 | 1.00 | 1.00 | 1.00 | 1.00 | 1.00 |\\n| 40.00 | 1.00 | 1.00 | 1.00 | 1.00 | 1.00 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems that if the line reaches the value 1 this represents that the growth has stopped, indicating that for higher temperature the film thickness increases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At the interface between the starting surface and at the surface.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"About 10 angstrom for the process' at 127 and 177 degrees. The rest of the material shows little vacancies and can be seen as the bulk.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Vacancies in the lattice structure can act as charge traps, resulting in lower performances.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":612,"height":482}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":616,"height":486,"image_format":"jpeg","image_sha256":"5eb0d1d2b31432b74b78f39d38773470c734a6935353c7fe278a4b518561a630","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_16.jpg","caption":"Figure 16. Fraction of lattice sites in the film that contain an ethyl-ligand. The fraction of sites containing an ethyl-ligand peaks at the beginning of the deposition. The peak then levels down to about 20 to $25\\%$ of sites containing an ethyl-ligand.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_16","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_16","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the fraction of sites containing a ligand along the z-axis at various temperatures (27°C, 77°C, 127°C, and 177°C). The highest fraction occurs around 5 angstroms for all temperatures, with a subsequent decline.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| z-axis / angstrom | 27 °C | 77 °C | 127 °C | 177 °C |\\n|---|---|---|---|---|\\n| 0 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 3 | 0.48 | 0.48 | 0.35 | 0.30 |\\n| 5 | 0.20 | 0.20 | 0.20 | 0.20 |\\n| 10 | 0.15 | 0.24 | 0.24 | 0.24 |\\n| 15 | 0.00 | 0.24 | 0.24 | 0.24 |\\n| 20 | 0.00 | 0.24 | 0.24 | 0.24 |\\n| 25 | 0.00 | 0.10 | 0.15 | 0.15 |\\n| 30 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 35 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 40 | 0.00 | 0.00 | 0.00 | 0.00 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Deep in the film, right at the interface between the substrate and the film. This is irrespective of the deposition temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ABout 24 degrees.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The GPC is roughly equal as for both temperatures the film extends equally far in the z-direction.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1:0.50:0.50\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":615,"height":481}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_16.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":617,"height":486,"image_format":"jpeg","image_sha256":"95fc7f7b2835bd7cea0b33fe8b5bfe15703927e7fb4663274a8ef6b50ca2f5ae","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_6.jpg","caption":"Figure 6. Change in energy as a function of water molecules as well as the averaged adsorption energy per adsorbed water molecule. At the ethyl-coverage of 7.1 ethyl $\\mathrm{nm}^{-2}$ , the adsorption bond of a single water molecule is strong. However, inclusion of more water molecules weakens the average adsorption bond because of steric hindrance. After three water molecules, no further water can adsorb to the surface.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the trend of overall adsorption energy and averaged adsorption energy per H₂O molecule as the number of H₂O molecules increases, where the adsorption energy minimizes after the adsorption of three water molecules.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of H₂O molecules in the system | Overall adsorption energy | Averaged adsorption energy per H₂O |\\n|---|---|---|\\n| 1 | -1.25 | -1.25 |\\n| 2 | -1.75 | -0.80 |\\n| 3 | -2.25 | -0.75 |\\n| 4 | -2.1 | -0.5 |\\n| 5 | -2.25 | -0.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This can be concluded by the fact that the overall adsorption energy does not further decrease with increasing number of adsorbed water molecules.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Linear\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Water reacts with the remaining ligands at the surface. If these are all removed the water can no longer adsorb.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"-2.25 eV.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":625,"height":513}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":625,"height":514,"image_format":"jpeg","image_sha256":"414692eb2d13d30765643bc8d179d6b18f895c1cd223c97748026334c76186f2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_9.jpg","caption":"Figure 9. Simulated QCM data from the kMC model. Initially, the growth rate is the same for all temperatures when the surface becomes saturated with DEZ. However, after ethyl-saturation, the different temperature graphs diverge as the elimination of ethyl-ligands is low at low temperatures.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_9","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the mass gain over time at different temperatures (27°C, 77°C, 127°C, 177°C). The mass gain increases stepwise with time, indicating a cumulative effect, characteristic of ALD.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time / seconds | Mass-gain / ng cm⁻² 27 | Mass-gain / ng cm⁻² 77 | Mass-gain / ng cm⁻² 127 | Mass-gain / ng cm⁻² 177 |\\n|---|---|---|---|---|\\n| 0 | 0 | 0 | 0 | 0 |\\n| 1 | 120 | 120 | 120 | 120 |\\n| 2 | 225|250|300|300|\\n| 4 | 300 |350|450|450|\\n| 6 | 300 |450|600|600|\\n| 8 | 300 |740|900|900|\\n| 10 | 375 |850|1050|1050|\\n| 12 | 375 |975|1200|1200|\\n| 14 | 375 |1100|1350|1350|\\n| 16 | 375 |1250|1500|1500|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The duration of single cycle is 1.6 seconds. This can be concluded from the graph that there are 10 cycles in a time span of 16 seconds in the figure.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No there is no cyclic growth. For ALD the increase every cycle should be the same, this is not the case fpr 27 degrees Celcius.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"127, 177 degrees Celcius.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Water can condensate below a 100 degrees Celcius, so a process temperature of 77 degrees can result in liquid water in the reactor.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":609,"height":482}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":613,"height":483,"image_format":"jpeg","image_sha256":"f2913c5a31f3df34688b510d0fc06ebd46c077157640860d623693c5e51089a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_11_figure_4.jpg","caption":"Figure 4. $\\mathrm{ZnO}$ thickness as a function of the number of ALE cycles for temperatures between $100$ and $250^{\\circ}\\mathrm{C}$ , as measured by in situ SE.","id":"train/atomic-layer-etching/experimental-usecase/11/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/11/figure_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot shows change in ZnO thickness as a function of number of ALE cycles at various temperatures\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of ALE Cycles | 100 °C (Å) | 150 °C (Å) | 200 °C (Å) | 250 °C (Å) |\\n|----------------------|-----------|-----------|-----------|-----------|\\n| 0 | 585 | 585 | 585 | 585 |\\n| 10 | 580 | 575 | 570 | 565 |\\n| 20 | 575 | 565 | 555 | 545 |\\n| 30 | 570 | 555 | 540 | 530 |\\n| 40 | 565 | 545 | 530 | 525 |\\n| 50 | 560 | 540 | 525 | 520 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, in-situ SE\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The EPCs at different temperatures are as follows, \\n1. 100 °C, 0.54 ± 0.05 Å\\n2. 150 °C, 0.97 ± 0.07 Å\\n3. 200 °C, 1.25 ± 0.08 Å\\n4. 250 °C, 1.31 ± 0.08 Å\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ZnO thickness can be seen to decrease linearly with the number of ALE cycles for each temperature, in line with a layer-by-layer etching mechanism.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As seen in image, the thicknesses decrease more at higher temperatures, thus etch per cycle and the ALE increases with increase in temperature\"}]}]","bbox":[{"panel_id":"a","x":459,"y":3,"width":365,"height":303}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plasma.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":427,"height":348,"image_format":"jpeg","image_sha256":"3a1b8e63e53530dfb0a821d70946069cf7a6f85b7ad132e21004c37923e038a0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_13_figure_3.jpg","caption":"Figure 3. Etch rate per cycle of the atomic layer etching (ALE) for (a) varying $\\mathrm{O_2}$ and fixed $\\mathrm{BCl_3}$ plasma times per cycle and (b) varying $\\mathrm{BCl_3}$ and fixed $\\mathrm{O_2}$ plasma times.","id":"train/atomic-layer-etching/experimental-usecase/13/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/13/figure_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch rate increases linearly with increasing O₂ time/cycle for both BCl₃ time/cycles of 60 sec and 30 sec.\"},{\"panel_id\":\"b\",\"text\":\"The etch rate increases linearly with increasing BCl₃ time/cycle for both O₂ time/cycles of 60 sec and 30 sec.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| O₂ time/cycle (sec) | Etch rate [nm/cycle] BCl₃ time/cycle 30 sec | Etch rate [nm/cycle] BCl₃ time/cycle 60 sec |\\n|---|---|---|\\n| 0 | 0.0 | 0.0 |\\n| 30 | 0.4 | 0.4 |\\n| 45 | 0.5 | 0.6 |\\n| 50 | 0.5 | 0.6 |\\n| 60 | 0.55 | 0.7 |\\n| 90 | 0.55 | 0.7 |\"},{\"panel_id\":\"b\",\"text\":\"| BCl₃ time/cycle (sec) | Etch rate [nm/cycle] O₂ time/cycle 30 sec | Etch rate [nm/cycle] O₂ time/cycle 60 sec |\\n|---|---|---|\\n| 0 | 0.0 | 0.0 |\\n| 30 | 0.4 | 0.6 |\\n| 45 | 0.4 | 0.7 |\\n| 50 | 0.4 | 0.7 |\\n| 90 | 0.4 | 0.7 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 3 shows that the etch rate per ALE cycle increases with increasing O₂ plasma exposure up to 60 s when the BCl₃ plasma time is held constant, indicating that longer oxidation enhances the formation of a removable surface layer. Beyond 60 s, the etch rate plateaus, suggesting that the surface becomes fully oxidized and that further O₂ exposure does not increase the amount of material available for removal, consistent with self-limiting behaviour. Similarly, when the O₂ plasma time is fixed at 60 s and the BCl₃ exposure is increased, the etch rate rises until 45 s, after which it also saturates, implying that the chlorination and removal step has become complete.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.4 nm/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.7 nm/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.6 nm/cycle.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":4,"width":549,"height":409},{"panel_id":"b","x":595,"y":8,"width":553,"height":404}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/Low-Damage and Self-Limiting (Al)GaN Etching Process.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1150,"height":414,"image_format":"jpeg","image_sha256":"ae2956d4683a4f7835b97ae8ba70f6c9f771226f6fa4224b643393f63fbed642","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_13_figure_4.jpg","caption":"Figure 4. Etch rate when using $\\mathrm{BCl}_3$ plasma under a fixed ICP power of $400 \\mathrm{W}$ and varying bias powers.","id":"train/atomic-layer-etching/experimental-usecase/13/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/13/figure_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the etch rate of GaN and AlGaN as a function of bias power. The etch rate increases linearly with bias power for both materials.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Bias power [W] | Etch rate [nm/min] GaN | Etch rate [nm/min] GaN |\\n|---|---|---|\\n| 0 | 0.0 | 0.0 |\\n| 5 | 1.0 | 1.0 |\\n| 10 | 4.0 | 2.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10 mTorr.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"400 W.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"BCl3 plasma.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the bias power increases, initially no etching is observed. Only at a bias power higher than 2 W is any etching observed. This means that above 2 W, the BCl3 plasma is energetic enough to etch the substrates without the need of O2 plasma, which also means that above 2 W, the reactions during the BCl3 plasma exposure are not self-limiting.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":0,"width":619,"height":475}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/Low-Damage and Self-Limiting (Al)GaN Etching Process.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":623,"height":478,"image_format":"jpeg","image_sha256":"bf66abcda001fa1b3194d3edb70f4248b0130a5de1ef7a760bfb1318ee30bdf8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_13_figure_8.jpg","caption":"Figure 8. $I - V$ curves of the fabricated Schottky diodes. (a) Forward $I - V$ characteristics (linear scale), (b) forward $I - V$ characteristics (log scale), (c) reverse $I - V$ characteristics (log scale), and (d) ideality factors.","id":"train/atomic-layer-etching/experimental-usecase/13/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/13/figure_8","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between forward voltage and current for two methods: ALE and Digital etching.\"},{\"panel_id\":\"b\",\"text\":\"The line chart displays the logarithmic scale of current against forward voltage for ALE and Digital etching.\"},{\"panel_id\":\"c\",\"text\":\"The line chart illustrates the absolute value of current against reverse voltage for ALE and Digital etching.\"},{\"panel_id\":\"d\",\"text\":\"The line chart depicts the ideality factor n against forward voltage for ALE and Digital etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Forward voltage (V) | Current [mA] ALE | Current [mA] Digital etching |\\n|---|---|---|\\n| 0.0 | 0 | 0 |\\n| 0.5 | 0 | 0 |\\n| 1.0 | 20 | 20 |\\n| 1.5 | 60 | 60 |\\n| 2.0 | 100 | 100 |\"},{\"panel_id\":\"b\",\"text\":\"| Forward voltage (V) | Current [A] ALE | Current [A] Digital etching |\\n|---|---|---|\\n| 0.0 | 10^-11 | 10^-11 |\\n| 0.5 | 10^-5 | 10^-6 |\\n| 1.0 | 10^-2 | 10^-2 |\\n| 1.5 | 10^-2 | 10^-2 |\\n| 2.0 | 10^-1 | 10^-1 |\"},{\"panel_id\":\"c\",\"text\":\"| Reverse voltage (V) | Current [A] ALE | Current [A] Digital etching |\\n|---|---|---|\\n| -10 | 10^-4 | 10^-4 |\\n| -9 | 10^-5 | 10^-5 |\\n| -8 | 10^-5 | 10^-5 |\\n| -7 | 10^-6 | 10^-6 |\\n| -6 | 10^-6 | 10^-6 |\\n| -5 | 10^-6 | 10^-6 |\\n| -4 | 10^-7 | 10^-7 |\\n| -3 | 10^-7 | 10^-7 |\\n| -2 | 10^-8 | 10^-8 |\\n| -1 | 10^-10 | 10^-8 |\\n| 0 | 10^-12 | 10^-10 |\"},{\"panel_id\":\"d\",\"text\":\"| Forward voltage (V) | Ideality factor n Digital etching | Ideality factor n ALE |\\n|---|---|---|\\n| 0.0 | 0.5 | 1.4 |\\n| 0.05 | 1.3 | 1.3 |\\n| 0.1 | 1.8 | 1.2 |\\n| 0.15 | 1.9 | 1.2 |\\n| 0.2 | 2.2 | 1.1 |\\n| 0.25 | 2.4 | 1.2 |\\n| 0.3 | 2.5 | 1.1 |\\n| 0.35 | 1.7 | 1.2 |\\n| 0.4 | 1.5 | 1.2 |\\n| 0.45 | 1.2 | 1.2 |\\n| 0.5 | 1.2 | 1.5 |\\n| 0.55 | 1.2 | 1.7 |\\n| 0.6 | 1.6 | 2.3 |\\n| 0.65 | 2.2 | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 20 mA.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is about 10^-8 A for the ALE sample and 10^-7 A for the Digital etching sample.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 8d shows that the diode fabricated using ALE exhibits a much more uniform and lower ideality factor in the low forward-bias region compared to the diode processed by digital etching, indicating reduced trap-assisted recombination and fewer defect states at the junction. In contrast, the non-uniform slope observed for the digital etching case suggests greater plasma-induced damage.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 10^-10 A for the ALE sample and 10^-9 A for the Digital etching sample.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":11,"width":659,"height":432},{"panel_id":"b","x":703,"y":9,"width":663,"height":460},{"panel_id":"c","x":5,"y":535,"width":641,"height":421},{"panel_id":"d","x":721,"y":551,"width":645,"height":402}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/Low-Damage and Self-Limiting (Al)GaN Etching Process.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1367,"height":964,"image_format":"jpeg","image_sha256":"3398e05ea2f7dd696f5c12129a0583084338d58a0dacc52469c93f2a2674326c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_16_fig_2.jpg","caption":"Fig. 2. a) Film deposition rate on different materials and b) radicals concentration over $\\nu_{\\mathrm{CF4}}$ in the plasma mixture, while Ar fraction is $83.3\\%$ . Negative values correspond to etching.","id":"train/atomic-layer-etching/experimental-usecase/16/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/16/fig_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the deposition rate on different materials (Si, Al2O3, HfO2, AlNx, TiN, SiO2) against the fraction of CF4 in the plasma mixture. For all materials, the deposition rate increases rapidly at low CF₄ content and then decreases again at higher CF₄ concentrations.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the concentration of F, CF2, and CF species against the fraction of CF4 in the plasma mixture. For all three species, the concentration increases with CF₄ content, but the increase becomes more gradual at higher CF₄ concentrations.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ν_CF4 (%) | Si (nm/min) | Al2O3 (nm/min) | HfO2 (nm/min) | AlNx (nm/min) | TiN (nm/min) | SiO2 (nm/min) |\\n|-----------|-------------|----------------|---------------|---------------|--------------|---------------|\\n| ~3 | ~1.5 | ~2.5 | ~2.3 | ~2.6 | ~2.2 | ~0.8 |\\n| ~5 | ~4.0 | ~6.0 | ~5.5 | ~6.2 | ~1.5 | ~1.2 |\\n| ~10 | ~3.0 | ~4.5 | ~3.5 | ~4.8 | ~−1.0 | ~−5.5 |\\n| ~13 | ~2.0 | ~3.8 | ~3.2 | ~4.0 | ~−0.3 | ~−5.0 |\"},{\"panel_id\":\"b\",\"text\":\"| ν_CF4 (%) | F (cm⁻³) | CF2 (cm⁻³) | CF (cm⁻³) |\\n|-----------|------------------|------------------|------------------|\\n| ~3 | ~1×10¹³ | ~5×10¹⁰ | ~2×10¹⁰ |\\n| ~5 | ~2×10¹³ | ~8×10¹⁰ | ~3×10¹⁰ |\\n| ~7 | ~5×10¹³ | ~1×10¹¹ | ~5×10¹⁰ |\\n| ~10 | ~8×10¹³ | ~1.6×10¹¹ | ~9×10¹⁰ |\\n| ~13 | ~1×10¹⁴ | ~1.8×10¹¹ | ~1.1×10¹¹ |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both increase in value as the concentration of CH4 increases. However, F reaches a maximum value close to 10^14, while CF reaches 10^11\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The CF₄ fraction (ν_CF₄) in the plasma mixture.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plot indicates that as the CF4 fraction in the plasma increases, the F concentration rises extremely rapidly for mixtures above about 5% CF4, growing by several orders of magnitude relative to CF and CF2 (due to the logarithmic scale). While CF and CF2 radicals contribute mainly to film growth, F atoms favor the formation of volatile fluorides and thus promote etching. When F becomes predominant in the plasma, deposition is progressively suppressed and, for some materials, the overall process switches from film growth to etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Fluorine radical concentration increases from 10^13 to the order of 10^14 with change in CF4 concentration and is higher than the CFx concentrations.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With increase of CF4 fraction, the deposition rate increases slowly at first and then reaches a maximum. Further increase of CF4 leads to decrease of deposition rate for Si, Al2O3, HfO2, and AlNx. In the case of SiO2 and TiN, increase of CF4 causes a change from deposition to etching.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No.\\nFluorine-containing radicals concentration increase with the growth of CF₄ fraction in plasma mixture.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"F (fluorine), with concentration near 10¹⁴ cm⁻³.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As ν_CF₄ increases, higher F and CFₓ radical densities initially enhance surface reactions, leading to higher deposition rates. Beyond the mid-fraction range, excessive fluorination and increased etching probability reduce net growth, producing the observed decline in deposition rates despite rising radical concentrations.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The radical concentration of CF has the highest dependence on the CF4 concentration.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the CF₄ fraction increases, the concentration of fluorine-containing radicals such as F, CF, and CF₂ rises significantly, enhancing chemical reactivity at the surface. At moderate CF₄ levels, polymer-forming species promote deposition, while at higher CF₄ fractions, the high density of reactive fluorine radicals enhances bond breaking and material removal. This shift in plasma chemistry alters surface reaction pathways, causing certain materials, such as SiO₂ and TiN, to transition from net deposition to net etching.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"TiN, SiO₂\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Although the process involves depositing materials onto a film, come materials, such as TiN and SiO2, etch. Therefore, the deposition rate decreases as the CF4 concentration increases.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The deposition rate is lowest for SiO1 and highest for ALNx\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The deposition ratio increases up to around 5% and 6% of CF4, then decreases as the concentration increases. In contrast, the concentration of CF4 and radicals is proportional, and the relationship is stronger in the case of F.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Atomic F has the fastest growth relative to CF and CF2, this implies a kinetic shift towards etching as v_CF4 increases.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Si, Al2O3, HfO2, AINx, TiN, SiO2\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All materials start in net deposition at low ν_CF₄. As ν_CF₄ increases, the rates climb to a peak at low–mid ν_CF₄ and then drop. For SiO₂ and TiN, the curve crosses zero at higher ν_CF₄, this means they switch from deposition to etching. This is consistent with panel (b): the F radical grows fastest relative to CF/CF₂, pushing the surface balance toward etching.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The graph shows how the deposition rate changes with CF4 fraction for different materials. Based only on this data, AlNx looks like the best choice for industrial use. It has the highest deposition rate and stays relatively high across the whole CF4 concentration range, which would enable faster processing.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"6.6% (fastest deposition).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Below 5% CF4, as the concentration of CF4 increases, so too does the deposition rate on all substrates. Above 5%, the deposition rate generally decreases. On SiO2 however, etching occurs instead above 5% CF4 and this also occurs for TiN above 10% CF4.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN and SiO2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The chamber pressure was kept at 10 mTorr; The plasma was always composed of 83.3% Ar the molecular fraction of CF4 varied between 3.3 and 13.3%, with the remaining fraction consisting of H2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At about 7% CF4 concentration, the deposition rates of Al2O3, HfO2, Si and AlN are highest.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the CF₄ fraction rises further, the concentration of highly reactive fluorine (F) radicals increases much more rapidly. This significant rise in 'F' radicals shifts the surface kinetics from a deposition-dominated process to an etching-dominated one, where 'F' atoms aggressively etch the deposited film.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"For higher CF₄ fractions:-\\n\\n1) On SiO₂ the deposition rate becomes negative, indicating an etching process.\\n\\n2) On Si, Al₂O₃, HfO₂, and AlNₓ, the deposition rate decreases but remains positive, indicating net deposition.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, but only for specific materials.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiO₂ and TiN\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Low CF₄ fraction (<5%) because: (1) provides polymer deposition on target materials (Al₂O₃, AlNx, HfO₂), (2) avoids etching of potential mask materials (SiO₂, TiN)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes (approximately—most materials peak around 5-6.6% CF₄).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Highest: [ALNx] (~[6.1]); net etch: SiO2 (negative).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The materials are TiN and SiO2\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The material that should be used as substrate is AlNx\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An experiment can be designed such that initial thickness and final thickness can be determined after exposure to the plasma. Some materials thicknesses will decrease, others will increase.\"}]}]","bbox":[{"panel_id":"a","x":43,"y":35,"width":470,"height":319},{"panel_id":"b","x":529,"y":36,"width":434,"height":318}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/Selective atomic layer etching of Al2O3, AlNx and HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":964,"height":355,"image_format":"jpeg","image_sha256":"7032718f0be80a9e6064ebb2bc165f223e723a2d2408bb3bc7ba3011334b70cf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_16_fig_4.jpg","caption":"Fig. 4. The etch rate over modification step duration a) for all studied materials, and b) enlarged for $\\mathrm{Al_2O_3}$ , $\\mathrm{AlN_x}$ , and $\\mathrm{HfO_2}$ .","id":"train/atomic-layer-etching/experimental-usecase/16/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/16/fig_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Etch rate as a function of modification step duration shows material-dependent behavior. SiO₂ increases nearly monotonically, reaching ~0.8 nm/cycle at long times. AlNₓ and Al₂O₃ exhibit mid-range maxima (~6–10 s) followed by a decline at longer durations. HfO₂ peaks later (~10–12 s) at a lower maximum rate. TiN remains near zero or slightly negative across the full duration range.\"},{\"panel_id\":\"b\",\"text\":\"The enlarged view emphasizes distinct optimal modification windows: AlNₓ peaks earliest (~6–8 s), Al₂O₃ slightly later (~8–10 s), and HfO₂ latest (~10–12 s). Beyond these windows, etch rates decrease, indicating over-modification effects.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Modification step duration (s) | Al₂O₃ (nm/cyc) | HfO₂ (nm/cyc) | AlNₓ (nm/cyc) | TiN (nm/cyc) | SiO₂ (nm/cyc) |\\n|---|---|---|---|---|---|\\n| 0 | ~0.02 | ~0.01 | ~0.02 | ~0.00 | ~0.05 |\\n| 4 | ~0.15 | ~0.06 | ~0.17 | ~0.00 | ~0.30 |\\n| 6 | ~0.17 | ~0.08 | ~0.18 | ~0.00 | ~0.45 |\\n| 10 | ~0.16 | ~0.09 | ~0.17 | ~0.00 | ~0.62 |\\n| 12 | ~0.15 | ~0.09 | ~0.16 | ~0.00 | ~0.65 |\\n| 14 | ~0.09 | ~0.07 | ~0.10 | ~−0.02 | ~0.82 |\"},{\"panel_id\":\"b\",\"text\":\"| Modification step duration (s) | Al₂O₃ (nm/cyc) | HfO₂ (nm/cyc) | AlNₓ (nm/cyc) |\\n|---|---|---|---|\\n| 0 | ~0.02 | ~0.01 | ~0.02 |\\n| 4 | ~0.15 | ~0.07 | ~0.17 |\\n| 6 | ~0.17 | ~0.09 | ~0.19 |\\n| 10 | ~0.16 | ~0.10 | ~0.19 |\\n| 12 | ~0.16 | ~0.10 | ~0.18 |\\n| 14 | ~0.08 | ~0.06 | ~0.10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch ratio of different materials such as Al2O3, HfO2, AlNx, TiN, SiO2, is analyzed as a function of modification step duration.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch rate increases for all materials except for SiO2 up to approximately 5s, after which remains constant until 12s before finally decreasing. In contrast, the etch ratio of SiO2 depend on the duration of the modification step.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiO2, and TiN\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Using SiO2 enables higher etch ratios to be achieved in a shorter amount of tiem.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For AL2O3, HFO2, and AINx, the etch rate rises rapidly and peaks around 6-8 seconds. It then falls off. TiN's etch rate remains low/inactive across the whole duration. SiO2's etc rate rises throughout the whole duration range.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"a2: TiN\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiO2 (highest etch rate by modification step t = 0)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Al2O3, HfO2, and AlNx show an ALE window. Their etch rate rises with increasing modification time and then becomes nearly constant, indicating self-limiting, surface-saturation behavior characteristic of ALE. SiO2 does not show a clear window because its etch rate keeps increasing with time, and TiN does not because it is essentially not etched.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Al2O3/TiN, HfO2/TiN, AlNx/TiN.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 5 and 12 seconds; Al2O3, HfO2 and AlNx.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"According to the authors, this is most likely due to the difference in volatility between the formed products: the sublimation point of titanium fluoride is at 284 ◦C and the boiling point of silicon-fluoride is -86 ◦C. Titanium fluoride is much less volatile, which makes etching more difficult and the etch rate slower. The sputtering rate of argon ions on SiO2 is also two to three times higher than that of the other studies materials, which adds to the etch rate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Although insignificant, the minimal etching is attributed to sputtering by argon ions.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For SiO2 the etch rate increases linearly with modification step duration, for other materials it is more complex\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With the increase of modification step duration, the etch rate of Al2O3, AlNx and HfO2 reaches saturation, providing the ALE window. Further rise of modification step leads to the decrease of the etch rate due to too thick film deposition\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the modification time gives the activating chemicals more time to react with the surface, breaking more bonds and making the material easier to remove. This creates a thicker or more reactive modified layer, which leads to a higher etch rate. However, this effect eventually levels off once the surface is fully saturated.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HfO₂\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"SiO2 exhibits continuously increasing etch rate because silicon fluoride (SiF4) desorbs easily at lower temperatures, making it easily removed even with relatively low ion energy bombardment. In contrast, TiN shows virtually no etching because titanium fluoride has a much higher sublimation point, making desorption of reaction products extremely difficult at the process conditions used. This difference in etch behavior provides good selectivity for etching Al2O3, AlNx, and HfO2 over a TiN hard mask.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"AlNx\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 5-6 seconds\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Highest: SiO₂ (~0.82). \\nLowest: TiN (~0).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"SiO2 has a way higher etch rate than for example HfO2, at 15 s of modification duration. This indicates that SiO2, at least partially, can selectively be etch with respect to HfO2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN does not etch for any modification duration.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"5 s of modification duration is most likely used as this would have similar etch results as longer times, but reduces the processing time.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No there is continuous etching. For all three materials the etch rate is non-zero at 0 s modification duration.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At short modification durations, the surface is only partially covered by the fluorocarbon film, resulting in very low etch rates due to insufficient surface activation. As the modification time increases, a more complete reactive layer forms, enabling efficient ion-assisted reactions during the activation step and causing the etch rate to rise. Beyond an optimal duration, the etch rate saturates, reflecting self-limiting behavior, and may slightly decrease at longer times due to excessive film thickness hindering ion penetration and surface reaction efficiency.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Al2O3, HfO2, AINx\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At modification step duration of 5–12 seconds.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate of Al2O3, AlNx and HfO2 with rise of modification step to 12s lead to the decrease of the etch rate going out of saturation\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- AlNx: shows the highest etch-rate increase with duration.\\n- Al₂O₃: displays a moderate increase with duration.\\n- HfO₂: increases more slowly and remains the lowest of the three across the range.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. \\n Al₂O₃ is not suitable for a process that must be highly precise and insensitive to modification-step duration.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All three materials show similar behavior with initial etch rate increase, followed by a plateau at 5-12 seconds representing the ALE window. After 12 seconds, the etch rate decreases. This self-limiting plateau demonstrates atomic layer etching behavior.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"AlNₓ reaches its maximum etch rate earliest, around 6–8 s, followed by Al₂O₃ at roughly 8–10 s, while HfO₂ peaks later at about 10–12 s. This ordering suggests different kinetics for forming the modified surface state that enables removal, with HfO₂ requiring longer modification to reach maximum effectiveness.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Presence of an etch-rate saturation plateau with increasing modification time, Formation of a clear ALE window at intermediate modification durations, Reduced sensitivity to argon sputtering effects, Ability to form a self-limiting modified surface layer\"}]}]","bbox":[{"panel_id":"a","x":13,"y":33,"width":507,"height":349},{"panel_id":"b","x":547,"y":51,"width":406,"height":317}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/Selective atomic layer etching of Al2O3, AlNx and HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":953,"height":383,"image_format":"jpeg","image_sha256":"8546dbe44307f34383247a219f554da1449ae7012e2c77cb6ccf556bb405e858","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_16_fig_5.jpg","caption":"Fig. 5. The etch rate over activation step duration. Negative values correspond to film formation.","id":"train/atomic-layer-etching/experimental-usecase/16/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/16/fig_5","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Etch rate as a function of activation step duration shows a common negative starting value near −0.5 nm/cycle at 0 s for all materials, indicating net film formation without activation. As activation time increases, material-dependent removal emerges. SiO₂ exhibits the strongest response, increasing monotonically to ~0.7 nm/cycle at 20 s. AlNₓ and Al₂O₃ show intermediate increases, reaching ~0.3 nm/cycle at 20 s, while HfO₂ increases only modestly. TiN remains near zero across the range, indicating strong resistance to activation-induced removal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Activation step duration (s) | Al2O3 etch rate (nm/cyc) | HfO2 etch rate (nm/cyc) | AlNx etch rate (nm/cyc) | TiN etch rate (nm/cyc) | SiO2 etch rate (nm/cyc) |\\n|---|---|---|---|---|---|\\n| 0 | ~-0.55 | ~-0.55 | ~-0.55 | ~-0.55 | ~-0.55 |\\n| 5 | ~0.00 | ~0.00 | ~0.00 | ~0.00 | ~0.40 |\\n| 10 | ~0.18 | ~0.10 | ~0.18 | ~0.00 | ~0.55 |\\n| 20 | ~0.30 | ~0.15 | ~0.30 | ~0.05 | ~0.72 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They are studying the etch rate (nm/cyc) as a function of the activation step duration (s) for the different materials used in the process (Al2O3, HfO2, AlNx, TiN, SiO2)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, because all materials demonstrate film deposition when activation step duration is less than 5s (2.5s for SiO2).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No it does not seem to matter. Both Al2O3 and AlNx have similar etch results.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes it is possible, SiO2 can be selectively etched wrt to all other materials at an activation time of 5 seconds.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, there is an increase in etch rate for increasing activation time\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"20 s for HfO2 and 10 s for Al2O3.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiO2 at 20 s with ≈ 0.70nm/cycle.\\nEvidence: Its marker/line is highest among the series at 20 s.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch-per-cycle response depends on material. SiO2 shows the steepest increase with activation time, while AlNx and Al2O3 rise more modestly and TiN remains near zero. By 20s, the ranking is SiO2 ≫ AlNx ~ Al2O3 ≫ HfO2≫ TiN. This indicates [concise implication about selectivity or sensitivity to activation] grounded in the plotted slopes.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Stop layer: TiN — its curve stays ~0 across the range (slope ≈ 0).\\nLongest activation to achieve net removal: TiN— remains negative or near 0 until 10s, then crosses into positive etch.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At zero activation, polymer deposits at -0.5 nm/cycle on all surfaces. Increasing activation duration causes etch rates to shift from negative to positive as ions first remove polymer then activate material etching. The gradual increase in etch rate with activation time reflects the sequential sputtering and surface reaction activation processes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 0.5 nm/cycle (i.e. negative etch rate of -0.5 nm/cycle)\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is 0.16 nm/cycle\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No. The reason is that the deposited polymer film must first be sputtered away before material etching can begin.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The activation step duration directly controls the etch rate by determining the extent of surface modification. At very short durations, incomplete reactions lead to net film formation, but as duration increases, the surface becomes fully saturated, allowing the etch rate to rise sharply. Once the surface is completely modified, the process reaches a self-limiting plateau where further increases in activation time no longer affect the etch rate.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1.\\tAt very short durations, film formation (negative etch rate) occurs.\\n2.\\tAs duration increases, the process transitions from net deposition to net etching.\\n3.\\tAt intermediate durations, the etch rate rises sharply.\\n4.\\tAt long durations, the etch rate plateaus at a higher value.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes . HfO₂ etches more slowly than Al₂O₃ because its higher sputtering threshold reduces ion-induced material removal.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After 5s of activation steps, the etch rate begins to increase for all materials except TiN\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the etch rate remains low and only goes up to 0.02nm/cycle after 20s of activation steps\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, Al2O3 and AlN show similar behaviour in etch rate vs activation steps and also have similar etch rates.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"SiO2 requires the least number of activation as the etch rate increases after ~2.5s of activation step duration.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A negative etch rate corresponds to film growth/formation, rather than etching.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HfO2 has a higher sputtering threshold.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is probably due to the non-monoenergetic ion distribution function. The incline observed in the ALE window for the activation step may hamper reproducibility.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A strong time-dependent increase in etch rate indicates that more volatile products are generated as the activation time increases. Almost no volatile species are produced during the activation of TiN, since its etch rate remains essentially zero over the entire activation-time range. In contrast, SiO₂ is the most volatile, exhibiting the highest etch rate and a continuous rise with activation time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At around 5 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 1 nm thick (0.5 nm/cycle).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Al₂O₃, HfO₂, and AlNₓ all show a shallow rise in etch rate as the activation step becomes increases. TiN stays close to zero throughout, only moving slightly upward from a negative value at short times. SiO₂ increases far more strongly than the other materials, becoming the most rapidly etched surface at longer activation durations.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiO2\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Al2O3, HfO2, SiO2\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Zero activation: polymer film deposition (~0.5 nm) results in negative etch rate, Early activation (5–10 s): transition from deposition to etching, Moderate activation (10–15 s): onset of positive etch rate and initiation of steady etching, Longer activation (15–20 s): gradual increase in etch rate, no clear plateau\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.0 nm/cycle for both materials (transition point from deposition to etching).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"HfO₂ shows a slower increase in etch rate compared to Al₂O₃, with the slope of the etch rate approximately half that of Al₂O₃. This difference arises from HfO₂’s higher sputtering threshold and stronger resistance to argon ion bombardment, which reduces etching efficiency and delays the onset of steady material removal, highlighting how intrinsic material properties influence ALE performance.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":689,"height":434}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/Selective atomic layer etching of Al2O3, AlNx and HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":689,"height":434,"image_format":"jpeg","image_sha256":"873a06926fe98b1e93ec14cd7b5192cf73ca509a1ee6dd3d58fd48fab3a76bb2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_16_fig_6.jpg","caption":"Fig. 6. The etch depth over the number of cycles in ALE process (activation step duration is $10~\\mathrm{s}$ ).","id":"train/atomic-layer-etching/experimental-usecase/16/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/16/fig_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Etch depth increases approximately linearly with the number of ALE cycles for most materials, indicating a near-constant etch-per-cycle under a 10 s activation step. SiO₂ exhibits the steepest slope and the largest accumulated etch depth, reaching ~27 nm after 40 cycles. AlNₓ and Al₂O₃ show moderate linear removal, while HfO₂ etches slowly. TiN shows essentially no measurable etch depth across all cycles, indicating strong resistance to the ALE process. Dashed lines represent linear fits to the experimental data.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycles | Al2O3 etch depth (nm) | HfO2 etch depth (nm) | AlNx etch depth (nm) | TiN etch depth (nm) | SiO2 etch depth (nm) |\\n|---|---|---|---|---|---|\\n| 0 | 0.0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 15 | ~2.0 | ~1.5 | ~3.0 | ~0.0 | ~6.0 |\\n| 20 | ~3.5 | ~2.5 | ~5.0 | ~0.0 | ~12.0 |\\n| 30 | ~5.0 | ~3.2 | ~6.0 | ~0.0 | ~20.0 |\\n| 40 | ~6.0 | ~4.0 | ~7.5 | ~0.0 | ~27.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch depth as a function of the number of cycles, for different materials.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN, because the etch depth value is close to 0, regardless of the number of cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, because, unlike other materials, the etch depth continues to increase with each cycle. However, after 30 cycles, the etch depth appears to remain constant for Al2O2, HfO3, AlNx, and TiN.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiO2 is preferred because its slope is steeper than that of the other materials. This means that a greater etching depth can be achieved in the same number of cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"SiO2 does not show that good of a fit. This suggests that, if the characterization is performed well, that the process is not that controlled. This in turn suggests that perfect ALE is not acquired.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"HfO2 shows the highest etch resistivity as for this material, the total etch depth is the lowest.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Al2O3 and AlNx.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"30 cycles are required.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes, approximately linear for Al2O3, HfO2, AlNx, SiO2; TiN shows flat/near-zero change.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"“SiO2”\\nEvidence: “At 40 cycles it has the largest etch depth compared with other materials.\\\"\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"EPC depends strongly on material. SiO2 has the highest slope, followed by AlNx and Al2O3, while HfO2 is low and TiN is ≈0. This ranking indicates, how etch depth varies with increasing number of cycles.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TiN is the best candidate for an etch-stop under these ALE conditions. Its etch depth stays zero after 40 cycles, giving an etch-per-cycle of 0 nm/cycle. In the plot, its markers lie near the x-axis and the dashed fit has nearly zero slope, whereas other materials show measurable slopes and larger depths. Therefore, TiN would maintain thickness during etching and serve as an effective mask/stop layer.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Al₂O₃ – black squares\\n\\nHfO₂ – red circles\\n\\nAlNₓ – blue triangles\\n\\nSiO₂ – black asterisks\\n\\nTiN – red crosses\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10 seconds.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly, 5 to 6 nm.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process doesn't drift quickly with time. That allows predictable depth control just by choosing the cycle number.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the data in Figure 6 confirms the process's adherence to the self-limiting mechanism, as evidenced by the perfectly linear relationship between etch depth and the number of cycles. \\nThis linearity is governed by material-specific properties, including the surface's ability to saturate during the activation step and the volatility of the etched byproducts during the removal step. \\nFor the material tested here, these properties are well-suited to the ALE process, whereas materials with poor surface saturation or low byproduct volatility would show a sub-linear, reaction-limited etch rate.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The linear relationship is significant because it confirms the process is self-limiting itself , highly controllable and predictable. \\nIn a perfect ALE process, each cycle removes exactly one layer of atoms and then stops on its own. It cannot continue etching deeper, no matter how long you leave the reactants there. This trend is very well observed for most of the materials studied here.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1) The Etch Per Cycle (EPC) for various different materials\\n2) The total etch depth for a given number of cycles.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes \\n(This trend allows device manufacutures to achieve atomic-scale precision by simply controlling the number of cycles. Also, they can reliably etch to a target depth with minimal risk of damaging the underlying substrate, which is crucial for manufacturing advanced semiconductor devices.)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"From the graph, SiO2 has higher etch rate compared to other materials\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch depth has a linearly dependence with the number of cycles\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"From the graph, it is evident that TiN is not etched at all, while SiO2 has high etch rate, therefore with the current process, SiO2 could be selectively etched from a target containing both TiN and SiO2 films.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10 seconds for both steps each.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.16, 0.20, and 0.11 nm per cycle, respectively.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 30, 40, and 20, respectively.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The measured etch rates for Al2O3, AlNx and HfO2 are comparable to the Al-O bond length of 0.169 nm, which means that the ALE process has close to single-atom precision.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TiN would make the best mask. From the graph, its etch depth stays close to zero even after 40 cycles, meaning it is almost not etched at all. It can protect underlying layers while the other materials are removed.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 24 - 25 cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SiO2, AlNx, Al2O3, HfO2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiO2 (largest fluctuations in etch depth).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The five materials show noticeably different slopes. SiO₂ increases the most rapidly and reaches the largest etch depth. AlNₓ, Al₂O₃, and HfO₂ all rise more moderately, with HfO₂ showing the slowest increase of the three. TiN remains nearly flat across the entire range, with only a slight upward shift at the highest cycle count.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SiO2, AINx, Al2O3, HfO2\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Highest: AlNₓ (0.20 nm/cycle), Medium: Al₂O₃ (0.16 nm/cycle), HfO₂ (0.11 nm/cycle), Lowest: TiN (0.006 nm/cycle), Poor repeatability: SiO₂ (0.62 nm/cycle)\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"8 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The chart shows that etch depth increases linearly with cycles, but the rate differs strongly between materials. Al₂O₃, AlNₓ, and HfO₂ exhibit controlled, moderate etch rates, indicating effective ALE behavior. TiN shows almost no etching, confirming resistance to the process, while SiO₂ has high variability, indicating poor repeatability. This illustrates that the ALE process can selectively remove material layer-by-layer depending on the chemical and physical properties of each substrate, highlighting the importance of tuning parameters for selective etching.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":698,"height":556}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/Selective atomic layer etching of Al2O3, AlNx and HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":698,"height":556,"image_format":"jpeg","image_sha256":"26b84b84f0ecb72b7f97dbf259e00332f800ffd8ea39552adb2d40b3d009e63c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_11.jpg","caption":"Figure 11 displays the time evolution of the HF exposure together with the $\\mathrm{H}_2\\mathrm{S}^+$ ion signal at $m / z$ 34 produced by the","id":"train/atomic-layer-etching/experimental-usecase/23/figure_11","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_11","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multi-line chart shows how the etch rate (Å/cycle) of ZnS ALD changes with temperature for depositions carried out at 100 °C, 200 °C, and 300 °C. As the temperature increases, the etch rate also increases.The film deposited at 100 °C etches the fastest, while the film deposited at 300 °C etches the slowest at any given temperature. This implies that films deposited at higher temperatures are denser or chemically more robust.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Etch Rate (Å/cycle) | Condition |\\n|------------------|----------------------|------------------|\\n| 225 | 1.40 | ZnS ALD 100°C |\\n| 225 | 1.02 | ZnS ALD 200°C |\\n| 225 | 0.77 | ZnS ALD 300°C |\\n| 250 | 1.80 | ZnS ALD 100°C |\\n| 250 | 1.44 | ZnS ALD 200°C |\\n| 250 | 1.33 | ZnS ALD 300°C |\\n| 275 | 2.00 | ZnS ALD 100°C |\\n| 275 | 1.75 | ZnS ALD 200°C |\\n| 275 | 1.65 | ZnS ALD 300°C |\\n| 300 | 2.11 | ZnS ALD 100°C |\\n| 300 | 1.98 | ZnS ALD 200°C |\\n| 300 | 1.85 | ZnS ALD 300°C |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The setpoint should be 300 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The higher etch rate for the 100 °C film (black curve) indicates it is structurally weaker and less dense than the 300 °C film. The \\\"looser\\\" atomic network of the low-temperature film allows the etchant species to diffuse and react more readily, whereas the 300 °C film is more crystalline and compact, offering greater resistance to chemical attack.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Films deposited at lower temperatures (100 °C) typically have lower density and higher impurity content (e.g., unreacted ligands).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At high etch temperatures (300 °C), the etch rates for all films begin to converge (gap narrows to ~0.2 Å/cycle ). This suggests the process is transitioning from a surface-reaction-limited regime (where film density/quality dominates) to a mass-transport-limited regime (or saturation). In this regime, the supply of etchant or the desorption of byproducts becomes the bottleneck, making the intrinsic quality of the film less of a differentiator than it is at lower temperatures.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":647,"height":566}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":650,"height":570,"image_format":"jpeg","image_sha256":"48905067cd54a2fab10fff153a34a7c983a7049a624d7287df01951d22183819","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_12.jpg","caption":"Figure 12. $\\mathrm{ZnS}$ etch rates vs temperature for $\\mathrm{ZnS}$ ALD films grown at different temperatures.","id":"train/atomic-layer-etching/experimental-usecase/23/figure_12","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_12","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multi-line chart shows how the etch rate (Å/cycle) of ZnS ALD changes with HF pressures for depositions carried out at TMA pressures of 20 m.Torr and 200 m.Torr. As the pressure increases till 50, the etch rate increases and plateus.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF Pressure (mTorr) | Etch Rate (Å/cycle) | TMA Pressure |\\n|----------------------|----------------------|--------------|\\n| 0 | 0.00 | 20 mTorr |\\n| 0 | 0.00 | 200 mTorr |\\n| 50 | 1.65 | 20 mTorr |\\n| 50 | 2.00 | 200 mTorr |\\n| 100 | 1.75 | 20 mTorr |\\n| 100 | 2.24 | 200 mTorr |\\n| 150 | 1.81 | 20 mTorr |\\n| 150 | 2.43 | 200 mTorr |\\n| 200 | 1.83 | 20 mTorr |\\n| 200 | 2.43 | 200 mTorr |\\n| 250 | 1.83 | 20 mTorr |\\n| 250 | 2.46 | 200 mTorr |\\n| 300 | 1.83 | 20 mTorr |\\n| 300 | 2.48 | 200 mTorr |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"First, the TMA pressure must be set and stabilized at 200 mTorr. Then, the HF pressure must be set and stabilized at 50 mTorr for the duration of the ALE cycle before measuring the etch depth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"200 mTorr TMA is better for throughput as it gives a higher etch rate. The trade-off is higher precursor consumption and potentially more stringent pumping requirements to maintain process pressure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plateau occurs because all available surface reaction sites become saturated with HF-derived species within the pulse time. This reveals the self-limiting nature of the HF half-reaction, a defining characteristic of ideal ALE.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies the tool requires excellent pressure control and uniformity for both precursors. Any drift or non-uniformity in pressure will directly translate into etch rate variations, affecting device yield and performance consistency.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":665,"height":554}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":669,"height":558,"image_format":"jpeg","image_sha256":"bcd140015b59ad8c8b4bc8eea4b848b59dcb1ff3dd436ff57ef6d5431f9247eb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_6.jpg","caption":"Figure 6. Etch rate during $\\mathrm{ZnS}$ ALE vs precursor exposure time at $300^{\\circ}\\mathrm{C}$ . The HF pressure was $40\\mathrm{mTorr}$ and the TMA pressure was $45\\mathrm{mTorr}$ . Initial $\\mathrm{ZnS}$ ALE films were grown at $100^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/23/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This muliple line chart shows the etch rate per cycle (Å/cycle) as a function of precursor exposure time for two different ALE process conditions: one varying HF exposure time (x) with fixed TMA time (4 s), and the other varying TMA exposure time (y) with fixed HF time (1 s). Both show a rapid increase in etch rate with exposure time up to ~2 seconds, followed by a saturation plateau, indicating self-limiting surface reactions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Precursor Exposure Time (s) | Etch Rate (Å/cycle) | HF-Purging-TMA-Purging |\\n|-----------------------------|----------------------|-----------------------------|\\n| 0 | 0 | x-30-4-30 (s) |\\n| 0 | 0.006 | 1-30-y-30 (s) |\\n| 1 | 2.08 | x-30-4-30 (s) |\\n| 1 | 0.57 | 1-30-y-30 (s) |\\n| 2 | 2.02 | x-30-4-30 (s) |\\n| 2 | 1.8 | 1-30-y-30 (s) |\\n| 3 | 2.03 | x-30-4-30 (s) |\\n| 3 | 2.03 | 1-30-y-30 (s) |\\n| 4 | 2.05 | x-30-4-30 (s) |\\n| 4 | 2.05 | 1-30-y-30 (s) |\\n| 5 | | x-30-4-30 (s) |\\n| 5 | | 1-30-y-30 (s) |\\n| 6 | 2.04 | x-30-4-30 (s) |\\n| 6 | 2.05 | 1-30-y-30 (s) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the solid red line (x-30-4-30): 1) HF exposure for ‘x’ seconds → 2) Purge for 30 s → 3) TMA exposure for 4 s → 4) Purge for 30 s.\\nFor the blue line (1-30-y-30): 1) HF exposure for 1 s → 2) Purge for 30 s → 3) TMA exposure for ‘y’ seconds → 4) Purge for 30 s.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TMA requires a longer exposure to reach saturation (etch rate plateaus after ~3 s) compared to HF (~1 s). This implies that the TMA half-reaction is kinetically slower, so process optimization must balance sufficient TMA exposure for complete etching against throughput, as longer TMA times increase cycle time.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The saturation indicates that the surface reaction is self-limiting; after ~2 seconds, all available surface sites have reacted. This reveals that the etching mechanism is governed by monolayer-level surface saturation rather than continuous etching, which is the hallmark of ideal ALE.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It ensures robust uniformity despite inevitable local variations in precursor flux or exposure time. As long as the exposure time exceeds the saturation threshold everywhere on the wafer, the etch rate will be identical, eliminating thickness variations caused by flow non-uniformities.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":1,"width":662,"height":556}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":666,"height":561,"image_format":"jpeg","image_sha256":"6f88d1b0c4648983c5399bf758d71256a04938a5e55929eef60c4cd4108fd5ec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_28_fig2.jpg","caption":"FIG.2. (a) SIMS depth profiles of F as a function of the sputtering time after $\\mathrm{NF}_3$ plasma treatment for $60~\\mathrm{s}$ at 0, 10, 50, and $100W$ b) F 1s XPS peak from $\\mathrm{Al}_2\\mathrm{O}_3$ films; and (c) saturation of atomic fractions as $\\mathrm{NF}_3$ plasma exposure time at $10W$ and $100^{\\circ}C$","id":"train/atomic-layer-etching/experimental-usecase/28/fig2","sample_id":"atomic-layer-etching/experimental-usecase/28/fig2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multi spectra chart"},{"panel_id":"c","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the intensity of F- at different depths for various powers (0, 10, 50, 100 W). Increasing power leads to penetration of the F⁻ deeper into the film.\"},{\"panel_id\":\"b\",\"text\":\"The XP-spectrum t displays the intensity of F 1s peaks at different times (Reference, 5s, 20s, 50s, 60s) during plasma fluorination. The Al–F peak grows strongly after fluorination and then changes more modestly at longer times.\"},{\"panel_id\":\"c\",\"text\":\"The chart illustrates the atomic percentage changes of O1 s, Al 2p, F 1s, and C 1s with increasing plasma fluorination time. O, Al and C decrease rapidly and then plateau, F increases rapidly and then plateaus.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Depth (nm) | 0W: Intensity (arb.units) | 10W: Intensity (arb.units) | 50W: Intensity (arb.units) | 100W: Intensity (arb.units) |\\n|---|---|---|---|---|\\n| 0 | 2 | 65 | 63 | 66 |\\n| 1 | 2| 43| 52 | 60 |\\n| 2 | 2 | 15 | 15 | 20 |\\n| 3 | 2 | 8 | 10 | 11 |\\n| 4 | 2 | 6 | 8 | 7 |\"},{\"panel_id\":\"b\",\"text\":\"| Measurement | Peak: Intensity (arb.units) | Peak: Binding energy [eV] | \\n|---|---|---|\\n| Reference | 2.15 | 685 | \\n| 5s | 29 | 686.1 | \\n| 20s| 38 | 686.4 | \\n| 50s| 42 | 686.4 | \\n| 60s| 42 | 686.4 |\"},{\"panel_id\":\"c\",\"text\":\"| Plasma fluorination time (s) | Atomic % O 1s | Atomic % Al 2p | Atomic % F 1s | Atomic % C 1s |\\n|---|---|---|---|---|\\n| 0 | 52.1% | 28.8% | 0% | 18.5% |\\n| 5 | 42% | 27.9% | 21.2% | 9% |\\n| 20 | 38.7% | 27% | 21.8% | 10.8% |\\n| 50 | 37.5% | 27.9% | 24.9% | 8.6% |\\n| 60 | 38.4% | 27.9% | 25.3% | 8.1% |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The depth profiles indicate that increasing RF power leads to greater fluorine incorporation and a deeper fluorinated layer. This is attributed to higher RF power producing a larger flux of reactive fluorine radicals in the NF₃ plasma, which enhances fluorination. The fluorine signal still decreases with depth because the formed fluorinated layer acts as a diffusion barrier and hinders further transport.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approx. 50 s (F 1s peak stops increasing).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Noticeable binding energy shift suggest that the dominant bonding environment might be evolving between 5s and 20s (consistent with the probed surface becoming more uniformly fluorinated).\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Fluorination does not appear to modify the entire region probed by XPS. The F atomic % increases but reaches a plateau while O remains predominant. It is consistent with a picture of a fluorine-enriched surface layers over underlying oxide that is still largely unfluorinated.\"}]}]","bbox":[{"panel_id":"a","x":102,"y":10,"width":556,"height":478},{"panel_id":"b","x":111,"y":522,"width":542,"height":470},{"panel_id":"c","x":72,"y":1026,"width":583,"height":495}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/Atomic layer etching of Al2O3 with NF3 plasma fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":658,"height":1528,"image_format":"jpeg","image_sha256":"762d9e5088c12f0da2c44d7d29c314d9a78596c427499a5acbe82bea3709f92d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_28_fig_4.jpg","caption":"FIG. 4. (a) TMA exposure time at 290, 300, and $330^{\\circ}\\mathrm{C}$ of the removal step; (b) EPC using $\\mathrm{NF}_3 / \\mathrm{TMA} = 60 / 30\\mathrm{s}$ at the range of $250 - 480^{\\circ}\\mathrm{C}$ of the removal step; and (c) C 1s XPS peak from $\\mathrm{Al}_2\\mathrm{O}_3$ films after $\\mathrm{NF}_3$ plasma exposure time at $10\\mathrm{W}$ and $100^{\\circ}\\mathrm{C}$ and after removal step at an elevated temperature range of $280 - 480^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/28/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/28/fig_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch per cycle as a function of TMA exposure time shows a rapid rise and then saturation, with 300 °C removal-step temperature highest etch rate.\"},{\"panel_id\":\"b\",\"text\":\"The etch per cycle versus removal-step temperature increases sharply from low temperature, peaks around 300 °C, and then decreases at higher temperatures,\"},{\"panel_id\":\"c\",\"text\":\"XP-Spectrum shows that the peak intensity of C-C and C-Fx species increase with temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TMA exposure time (s) | Temperature (°C) | Etch per cycle (nm/cycle) |\\n|---|---|---|\\n| 0 | 290 | 0.0 |\\n| 0 | 300 | 0.0 |\\n| 0 | 330 | 0.0 |\\n| 10 | 290 | 0.097 |\\n| 10 | 300 | 0.17 |\\n| 10 | 330 | 0.14 |\\n| 20 | 290 | 0.17 |\\n| 20 | 300 | 0.25 |\\n| 20 | 330 | 0.23 |\\n| 30 | 290 | 0.20 |\\n| 30 | 300 | 0.30 |\\n| 30 | 330 | 0.27 |\\n| 40 | 290 | 0.21 |\\n| 40 | 300 | 0.30 |\\n| 40 | 330 | 0.27 |\"},{\"panel_id\":\"b\",\"text\":\"| Removal step temperature (°C) | Etch per cycle (nm/cycle) |\\n|---|---|\\n| 250 | 0.0 |\\n| 275 | 0.09 |\\n| 290 | 0.20 |\\n| 300 | 0.3 |\\n| 330 | 0.27 |\\n| 400 | 0.20 |\\n| 480 | 0.0 |\"},{\"panel_id\":\"c\",\"text\":\"| Measurement | Binding energy [eV] | Intensity (a.u.) | Assignment |\\n|---|---|---|---|\\n| NF3 plasma | 284.7 | 22 | C-C |\\n| NF3 plasma | 289.0 | 5 | C-Fx|\\n| 280 °C | 284.7 | 28 | C-C |\\n| 280 °C | 288.9 | 5 | C-Fx|\\n| 290 °C | 284.7 | 26 | C-C |\\n| 290 °C | 288.8 |4 | C-Fx|\\n| 300 °C | 284.7 | 35 | C-C |\\n| 300 °C | 288.8 | 5 | C-Fx|\\n| 400 °C | 284.7 | 51 | C-C |\\n| 400 °C | 288.7 | 9 | C-Fx |\\n| 480 °C | 284.7 | 58 | C-C |\\n| 480 °C | 288.7 | 10 | C-Fx |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"30 s (etch per cycle plateaus after 30 s).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C (fastest etching)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The EPC curve has a volcano-like shape because different mechanisms dominate at different temperatures. At low removal-step temperature, the etch per cycle is low because the ligand-exchange reaction between TMA and the fluorinated film is likely kinetically hindered. As the temperature increases into the intermediate range, this reaction proceeds more efficiently, leading to a higher EPC. At the highest temperatures, the EPC drops back to low values, because TMA might be thermally decomposing, which hinders the reaction.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At the high removal-step temperatures (400 °C and 480 °C ), the C 1s spectra show a much stronger C–C peak, compared to lower temperatures. This suggests that non-volatile carbon residues are accumulating on the surface with higher temperatures. Since TMA is the only significant source of carbon in the process, this strongly hints thermal decomposition of TMA at high temperatures.\"}]}]","bbox":[{"panel_id":"a","x":62,"y":5,"width":585,"height":481},{"panel_id":"b","x":72,"y":498,"width":577,"height":492},{"panel_id":"c","x":110,"y":1016,"width":536,"height":472}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/Atomic layer etching of Al2O3 with NF3 plasma fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":650,"height":1502,"image_format":"jpeg","image_sha256":"28f4b09264c023ab82c335565ab0372c7146c21bbfcaf4229bb31cf298e0e24f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_28_fig_5.jpg","caption":"FIG. 5. (a) Depth comparison of each half cycle of the fluorination step for $60 \\text{s}$ $\\mathrm{NF}_3$ plasma at 10, 50, and $100 \\text{W}$ and a temperature of $100^{\\circ}\\text{C}$ , and the removal step with TMA for $30 \\text{s}$ at an elevated temperature of $300^{\\circ}\\text{C}$ and (b) surface atomic fraction tendency at each half cycle at $10 \\text{W}$ .","id":"train/atomic-layer-etching/experimental-usecase/28/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/28/fig_5","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between RF power and the depth of fluorinated layer and etched depth, demonstrating both depths increasing with power, with the fluorinated layer always thicker than the removed thickness.\"},{\"panel_id\":\"b\",\"text\":\"The chart displays the atomic percentage of O1s, Al2p, F1s, and C1s across NF3 and TMA half-cycles. Percentage of fluorine is increasing after NF₃, then decreasing after TMA.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| RF power (W) | Fluorinated layer depth (nm) | Etched depth (nm) |\\n|---|---|---|\\n| 0 | 0.0 | 0.0 |\\n| 10 | 0.79 | 0.3 |\\n| 50 | 0.95 | 0.38 |\\n| 100 | 1.14 | 0.43 |\"},{\"panel_id\":\"b\",\"text\":\"| Cycle number | Step |O 1s | Al 2p | F 1s | C 1s |\\n|---|---|---|---|---|---|\\n| 0 | Start NF3 | 51 | 29 | 0 |18 |\\n| 0.5 | Start TMA | 38 | 29 | 26 | 9 |\\n| 1 | Start NF3 | 44 | 30 | 15 | 10 |\\n| 1.5 | Start TMA | 39 | 26 | 25 | 9 |\\n| 2 | Start NF3 | 48 | 29 | 14 | 9 |\\n| 2.5 | Start TMA | 38 | 28 | 25 | 9 |\\n| 3 | Start NF3 | 48 | 30 | 13 | 9 |\\n| 3.5 | Start TMA | 38 | 28 | 26 | 9 |\\n| 4 | End TMA | 46 | 30 | 13 | 11 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA is not removing fluorine completely, as the etched depth is always smaller than the fluorinated-layer depth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50 W.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"NF₃ acts as the fluorination step: during the NF₃ half-cycles the F1s signal rises, showing that the surface is converted to an F-rich layer. TMA then serves as the removal step: in the TMA half-cycles the F1s signal decreases. This is consistent with TMA consuming surface fluorine to form volatile Al-containing products.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":72,"y":10,"width":588,"height":476},{"panel_id":"b","x":72,"y":522,"width":587,"height":477}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/Atomic layer etching of Al2O3 with NF3 plasma fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":663,"height":1000,"image_format":"jpeg","image_sha256":"73f6812f2da020ff72aa0b331d4f2c26db5e979ac5658118e5653d901eb2894f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_29_fig_7.jpg","caption":"FIG. 7. Normalized NBE signal intensity of GaN underneath the AlGaN film: (a) after the BT step, (b) after exposure to $\\mathrm{Cl}_2$ plasma, and (c) after exposure to Ar plasma as a function of plasma exposure time.","id":"train/atomic-layer-etching/experimental-usecase/29/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/29/fig_7","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The normalized NBE signal intensity decreases with increasing plasma exposure time for both Ar plasma and Cl2 plasma.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Plasma Exposure Time (s) | Normalized NBE Signal Intensity (a.u.) Cl2 plasma| Normalized NBE Signal Intensity (a.u.) Ar plasma|\\n|---|---|---|\\n| 0 | 1.0 | 1.0|\\n| 50 | 0.5 |0.7|\\n| 100 | 0.45 |0.6|\\n| 200 | 0.35 |0.5|\\n| 300 | 0.25 |0.35|\\n| 350 | 0.25 |0.3|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both plasmas inflict ion bombardment, but only the Cl2 plasma also has a chemical effect on the substrate.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Especially for the Cl2 plasma curve there seems to be saturating behaviour, so yes.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 70 %.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.3\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":540,"height":528}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/Atomic layer etching of AlGaN using Cl2 and Ar gas.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":539,"height":528,"image_format":"jpeg","image_sha256":"366ab560be5b634b9b37c977a8aa6d66a3f236ca38bd633acec48c147a00d9df","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_33_fig_7.jpg","caption":"FIG. 7. Depth profiles of atomic concentrations of Ti, N, O, and C in the pristine TiN film. The thickness of the native oxide was approximately $3\\mathrm{nm}$ .","id":"train/atomic-layer-etching/experimental-usecase/33/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/33/fig_7","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The atomic concentration of Ti, N, O, and C changes over sputtering time, with Ti and N reaching a plateau at 50% while O and C decrease significantly.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sputtering Time (min.) | Atomic Concentration (%) |\\n|---|---|\\n| 0 | Ti: 25, N: 25, O: 28, C: 22 |\\n| 1 | Ti: 44, N: 44, O: 12, C: 0 |\\n| 2 | Ti: 49, N: 46, O: 5, C: 0 |\\n| 3 | Ti: 49, N: 46, O: 5, C: 0 |\\n| 4 | Ti: 49, N: 46, O: 5, C: 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The native oxide is 3 nm thick, the oxygen levels out at 5% after 2 min of etching, so the etch rate is 0.25 angstrom/s.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The measured carbon is advantitious carbon and likely comes from storing in ambient conditions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Ti:N ratio is 1:1.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, there is a constant level of oxygen at around 5%, indicating that there are impurities.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":0,"width":665,"height":535}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/Atomic layer etching of titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":670,"height":538,"image_format":"jpeg","image_sha256":"dd16d306d8b6b91f7f56a8fbdf350b7acea677583ef15f49ba04f48bda9c387f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_39_fig_2.jpg","caption":"FIG. 2. (a) EPC vs cycle number with $40 \\text{s} H_{2}$ plasma exposures only (triangles), $40 \\text{s} SF_{6} / Ar$ plasma exposures only (squares), and both half-cycles (circles). All processes occur at $0^{\\circ}C$ . The dashed lines are guides to the eye. (b) EPC versus $H_{2}$ plasma exposure time with $SF_{6} / Ar$ plasma exposure time fixed at $30 \\text{s}$ . (c) EPC versus $SF_{6} / Ar$ plasma exposure time with $H_{2}$ plasma exposure time fixed at $30 \\text{s}$ . The etch rates are observed to saturate with exposure time, demonstrating the self-limiting nature of the process.","id":"train/atomic-layer-etching/experimental-usecase/39/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/39/fig_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Thickness change remains near zero over 50 cycles for H₂-only and SF₆/Ar-only plasma exposures, while the combined H₂+SF₆/Ar sequence produces an approximately linear thickness decrease reaching ~80 nm by 50 cycles.\"},{\"panel_id\":\"b\",\"text\":\"With SF₆/Ar exposure fixed at 30 s, the etch per cycle increases with H₂ plasma exposure time and saturates near ~1.45–1.5 nm/cycle beyond ~40 s.\"},{\"panel_id\":\"c\",\"text\":\"With H₂ exposure fixed at 30 s, the etch per cycle similarly increases with SF₆/Ar exposure time and approaches a plateau near ~1.5–1.6 nm/cycle, indicating saturation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Curve | Number of cycles | Thickness change (nm) |\\n|---|---|---|\\n| H₂ (triangles) | 50 | ~ -1.0 |\\n| SF₆ (squares) | 50 | ~ -2.0 |\\n| H₂ + SF₆ (circles) | 10 | ~ -12.0 |\\n| H₂ + SF₆ (circles) | 20 | ~ -32.0 |\\n| H₂ + SF₆ (circles) | 30 | ~ -51.0 |\\n| H₂ + SF₆ (circles) | 40 | ~ -67.0 |\\n| H₂ + SF₆ (circles) | 50 | ~ -80.0 |\"},{\"panel_id\":\"b\",\"text\":\"| H₂ exposure time (s) | Etch rate (nm/cycle) | \\n|---|---| \\n| 0 | ~0.0 | \\n| 10 | ~1.00 | \\n| 20 | ~1.30 | \\n| 30 | ~1.40 | \\n| 40 | ~1.45 | \\n| 50 | ~1.50 |\"},{\"panel_id\":\"c\",\"text\":\"| SF₆ exposure time (s) | Etch rate (nm/cycle) |\\n|---|---|\\n| 0 | ~0.00 |\\n| 10 | ~1.20 |\\n| 20 | ~1.30 |\\n| 30 | ~1.40 |\\n| 40 | ~1.50 |\\n| 50 | ~1.60 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The H₂-only and SF₆-only conditions show little to no net thickness change over 50 cycles, with both traces staying close to 0 nm. In contrast, the combined H₂+SF₆ sequence produces a large, cumulative thickness decrease that reaches ~80 nm by 50 cycles. The comparison is consistent with effective etching occurring only when both half-cycles are applied in sequence.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Saturation ensures that additional exposure does not increase material removal beyond a fixed amount per cycle. This makes the process insensitive to small timing variations and enables precise, repeatable etch control. Such behavior is a defining requirement for true atomic layer etching.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At approximately 40 s.\"}]}]","bbox":[{"panel_id":"a","x":8,"y":13,"width":583,"height":616},{"panel_id":"b","x":646,"y":8,"width":437,"height":305},{"panel_id":"c","x":647,"y":340,"width":436,"height":290}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/Isotropic atomic layer etching of MgO-doped lithium niobate.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1083,"height":630,"image_format":"jpeg","image_sha256":"e248092abbb544cd9536a98d9918d58d32c70c4a2c53470bade1ddb18d596e9f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_4_fig_2.jpg","caption":"FIG. 2. (a) Energy scan and (b) synergy scan of the ITO ALE process at $150^{\\circ}\\mathrm{C}$ . Error bars in (a) and (b) show standard deviation from the mean, when multiple measurements are done with the same parameters.","id":"train/atomic-layer-etching/experimental-usecase/4/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/4/fig_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between DC bias and EPC (Å) for two conditions: ALE and Ar milling only.\"},{\"panel_id\":\"b\",\"text\":\"The line chart illustrates the synergy percentage at different DC bias voltages.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| DC bias (-V) | EPC (Å) ALE | EPC (Å) Ar milling only |\\n|---|---|---|\\n| 0 | 0.1 | 0 |\\n| 6 | 0.5 | |\\n| 9 | 1 | 0.1 |\\n| 12 | 1.5 | 0.25 |\\n| 18 | 1.5 | 0.5 |\"},{\"panel_id\":\"b\",\"text\":\"| DC bias (-V) | Synergy (%) |\\n|---|---|\\n| 0 | |\\n| 6 | |\\n| 9 | 80 |\\n| 12 | 75 |\\n| 18 | 55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The resulting EPC as a function of RF power starts to plateau at 20-30 W. Meanwhile, when observing just the effect of the Ar ions, which is the case for \\\"Ar milling only\\\", the Ar ions become energetic enough to significantly etch the surface above 15 W. This means that extra care should be taken when analysing the process above 15 W, as Ar etching might influence the observed EPC.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.5 Å.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.5 Å.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"80%.\"}]}]","bbox":[{"panel_id":"a","x":37,"y":39,"width":647,"height":444},{"panel_id":"b","x":760,"y":41,"width":650,"height":441}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/Atomic layer etching of indium tin oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1414,"height":486,"image_format":"jpeg","image_sha256":"86fdde7580780b06a0adc43fd206b0299be6e2cf53fa7681dc7077a7aafc209c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_42_figure_10.jpg","caption":"Figure 10. Etch rates of $\\mathrm{Al}_2\\mathrm{O}_3$ at different temperatures using (a) $\\mathrm{Sn(acac)}_2,$ b) DMAC and c) TMA as the metal precursor.","id":"train/atomic-layer-etching/experimental-usecase/42/figure_10","sample_id":"atomic-layer-etching/experimental-usecase/42/figure_10","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Etch rate versus temperature is plotted for Al2O3 using TMA, DMAC, Sn(acac)2\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Sn(acac)₂ Etch Rate (Å/cycle) | DMAC Etch Rate (Å/cycle) | TMA Etch Rate (Å/cycle) |\\n|------------------|--------------------------------|---------------------------|--------------------------|\\n| 150 | 0.15 | — | — |\\n| 175 | 0.20 | — | — |\\n| 200 | 0.28 | — | — |\\n| 225 | 0.40 | 0.10 | — |\\n| 250 | 0.50 | 0.35 | 0.15 |\\n| 275 | — | 0.50 | 0.30 |\\n| 300 | — | 0.65 | 0.45 |\\n| 325 | — | — | 0.65 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Al2O3 etching has different threshold temperatures for each metal precursor, hence the etch rate changes for TMA and DMAC. The Al2O3 etch rates all increase at higher temperatures after exceeding the threshold temperature.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Sn(acac)2 etched Al2O3 at temperatures ≥150 °C\\n2. In comparison, DMAC etched Al2O3 at higher temperatures ≥225 °C\\n3. TMA etched Al2O3 at even higher temperatures ≥250 °C\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The different temperature thresholds may be attributed to varying activation barriers for the ligand-exchange reactions. The\\ndifferent temperature thresholds for the etching may provide another method for obtaining selective thermal ALE.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":0,"width":668,"height":495}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/Selectivity in Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":672,"height":497,"image_format":"jpeg","image_sha256":"049df95b8761b42c5d6772a56c5d83b5e025ee93b049c770b7fc32044668ec3a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_42_figure_9.jpg","caption":"Figure 9. Etch rates of $\\mathrm{ZrO_2}$ $\\mathrm{HfO_2}$ and $\\mathrm{Al}_2\\mathrm{O}_3$ versus temperature using $\\mathrm{SiCl_4}$ as the metal precursor.","id":"train/atomic-layer-etching/experimental-usecase/42/figure_9","sample_id":"atomic-layer-etching/experimental-usecase/42/figure_9","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart plots the etch rate of SiCl4 versus temperature for ZrO2, HfO2, and Al2O3.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | ZrO₂ Etch Rate (Å/cycle) | HfO₂ Etch Rate (Å/cycle) | Al₂O₃ Etch Rate (Å/cycle) |\\n|------------------|---------------------------|---------------------------|---------------------------|\\n| 250 | 0.00 | 0.00 | 0.00 |\\n| 300 | 0.055 | 0.015 | 0.005 |\\n| 350 | 0.15 | 0.06 | 0.01 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. At 250 °C, Etch rate is almost 0\\n2. At 300 °C, Etch rate is 0.055 Å/cycle\\n3. At 350 °C, Etch rate is 0.15 Å/cycle\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ligand-exchange reaction between SiCl4 and AlF3 is unfavorable at all the temperatures hence the etch rate is nil.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ligand-exchange reaction between SiCl4 and ZrF4 or HfF4 is feasible at >200 °C, hence increasing etch rates observed at >250 °C . The ZrO2 etch rate is higher than the HfO2 etch rate even though their predicted ΔG values are nearly equivalent. There must be additional kinetic factors that determine the actual etch rates\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":663,"height":496}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/Selectivity in Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":667,"height":503,"image_format":"jpeg","image_sha256":"8da4c1d4f1b1d5c74ac382dd05417d75bc130c1bffb5b37dc80f4575fe985212","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_43_fig_6.jpg","caption":"Fig. 6. ToF-SIMS depth profiles of $\\mathrm{Al}_2\\mathrm{O}_3$ film after ALE process. The ALE cycle was repeated 5 times, and the samples were analyzed after the fluorination and removal steps. The $\\mathrm{AlF_2^-}$ concentration profiles were plotted for the different ALE process temperatures of (a) $200^{\\circ}\\mathrm{C}$ , (b) $250^{\\circ}\\mathrm{C}$ , and (c) $300^{\\circ}\\mathrm{C}$ . The $\\mathrm{AlOF_2^-}$ concentration profiles were also plotted for (d) $200^{\\circ}\\mathrm{C}$ , (e) $250^{\\circ}\\mathrm{C}$ , and (f) $300^{\\circ}\\mathrm{C}$ respectively.","id":"train/atomic-layer-etching/experimental-usecase/43/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/43/fig_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"},{"panel_id":"e","label":"multiple line chart"},{"panel_id":"f","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) depth profiles of Al₂O₃ films after five Atomic Layer Etching (ALE) cycles, measured after the fluorination and removal steps at different process temperatures.AlF₂⁻ depth profile at 200 °C, showing fluorine incorporation near the surface after fluorination and its partial removal during the etching step.\"},{\"panel_id\":\"b\",\"text\":\"AlF₂⁻ depth profile at 250 °C, indicating enhanced fluorine penetration and modified removal behavior compared to 200 °C.\"},{\"panel_id\":\"c\",\"text\":\"AlF₂⁻ depth profile at 300 °C, exhibiting deeper fluorine incorporation and more pronounced temperature-dependent effects.\"},{\"panel_id\":\"d\",\"text\":\"AlOF₂⁻ depth profile at 200 °C, reflecting the formation of mixed oxyfluoride species confined near the surface.\"},{\"panel_id\":\"e\",\"text\":\"AlOF₂⁻ depth profile at 250 °C, showing increased formation and redistribution of oxyfluoride species.\"},{\"panel_id\":\"f\",\"text\":\"AlOF₂⁻ depth profile at 300 °C, indicating stronger oxyfluoride formation and deeper distribution at higher temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sputter Time (s) | Intensity (c/s) | Method |\\n|---|---|---|\\n| 0 | 1E+02 | Fluorination |\\n| 0 | 1E+02 | Removal |\\n| 1 | 1.5E+02 | Fluorination |\\n| 1 | 1.5E+02 | Removal |\\n| 2 | 1E+02 | Fluorination |\\n| 2 | 1E+02 | Removal |\\n| 3 | 1.5E+01 | Fluorination |\\n| 3 | 1.5E+01 | Removal |\\n| 4 | 1E+01 | Fluorination |\\n| 4 | 1E+01 | Removal |\\n| 5 | 1.5E+00 | Fluorination |\\n| 5 | 1.5E+00 | Removal |\\n| 6 | 1E+00 | Fluorination |\\n| 6 | 1E+00 | Removal |\"},{\"panel_id\":\"b\",\"text\":\"| Sputter Time (s) | Intensity (c/s) | Method |\\n|---|---|---|\\n| 0 | 1E+02 | Fluorination |\\n| 0 | 1E+02 | Removal |\\n| 1 | 1.5E+02 | Fluorination |\\n| 1 | 1.4E+02 | Removal |\\n| 2 | 1E+02 | Fluorination |\\n| 2 | 9E+01 | Removal |\\n| 3 | 5E+01 | Fluorination |\\n| 3 | 4E+01 | Removal |\\n| 4 | 1E+01 | Fluorination |\\n| 4 | 8E+00 | Removal |\\n| 5 | 1.5E+00 | Fluorination |\\n| 5 | 1.4E+00 | Removal |\\n| 6 | 1.2E+00 | Fluorination |\\n| 6 | 1.1E+00 | Removal |\"},{\"panel_id\":\"c\",\"text\":\"| Sputter Time (s) | Intensity (c/s) | Method |\\n|---|---|---|\\n| 0 | 1E+02 | Fluorination |\\n| 0 | 8E+01 | Removal |\\n| 1 | 1.5E+02 | Fluorination |\\n| 1 | 1.3E+02 | Removal |\\n| 2 | 1E+02 | Fluorination |\\n| 2 | 8E+01 | Removal |\\n| 3 | 5E+01 | Fluorination |\\n| 3 | 3E+01 | Removal |\\n| 4 | 1E+01 | Fluorination |\\n| 4 | 8E+00 | Removal |\\n| 5 | 1.5E+00 | Fluorination |\\n| 5 | 1.3E+00 | Removal |\\n| 6 | 1.2E+00 | Fluorination |\\n| 6 | 1E+00 | Removal |\"},{\"panel_id\":\"d\",\"text\":\"| Sputter Time (s) | Intensity (c/s) | Method |\\n|---|---|---|\\n| 0 | 1E+02 | Fluorination |\\n| 0 | 1E+02 | Removal |\\n| 1 | 1.5E+02 | Fluorination |\\n| 1 | 1.5E+02 | Removal |\\n| 2 | 1E+02 | Fluorination |\\n| 2 | 1E+02 | Removal |\\n| 3 | 1.5E+01 | Fluorination |\\n| 3 | 1.5E+01 | Removal |\\n| 4 | 1E+01 | Fluorination |\\n| 4 | 1E+01 | Removal |\\n| 5 | 1.5E+00 | Fluorination |\\n| 5 | 1.5E+00 | Removal |\\n| 6 | 1E+00 | Fluorination |\\n| 6 | 1E+00 | Removal |\"},{\"panel_id\":\"e\",\"text\":\"| Sputter Time (s) | Intensity (c/s) | Method |\\n|---|---|---|\\n| 0 | 1E+02 | Fluorination |\\n| 0 | 1E+02 | Removal |\\n| 1 | 1.5E+02 | Fluorination |\\n| 1 | 1.4E+02 | Removal |\\n| 2 | 1E+02 | Fluorination |\\n| 2 | 9E+01 | Removal |\\n| 3 | 5E+01 | Fluorination |\\n| 3 | 4E+01 | Removal |\\n| 4 | 1E+01 | Fluorination |\\n| 4 | 8E+00 | Removal |\\n| 5 | 1.5E+00 | Fluorination |\\n| 5 | 1.4E+00 | Removal |\\n| 6 | 1.2E+00 | Fluorination |\\n| 6 | 1.1E+00 | Removal |\"},{\"panel_id\":\"f\",\"text\":\"| Sputter Time (s) | Intensity (c/s) | Method |\\n|---|---|---|\\n| 0 | 1E+02 | Fluorination |\\n| 0 | 8E+01 | Removal |\\n| 1 | 1.5E+02 | Fluorination |\\n| 1 | 1.3E+02 | Removal |\\n| 2 | 1E+02 | Fluorination |\\n| 2 | 8E+01 | Removal |\\n| 3 | 5E+01 | Fluorination |\\n| 3 | 3E+01 | Removal |\\n| 4 | 1E+01 | Fluorination |\\n| 4 | 8E+00 | Removal |\\n| 5 | 1.5E+00 | Fluorination |\\n| 5 | 1.3E+00 | Removal |\\n| 6 | 1.2E+00 | Fluorination |\\n| 6 | 1E+00 | Removal |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 200°C, the overlapping curves indicate that the TMA cannot overcome the activation barrier to effectively react with or volatilize the AlF_x layer, leaving the surface structure largely unchanged. At 300°C, the significant drop in signal confirms that the thermal energy enables the ligand-exchange mechanism to function, restoring the surface closer to the underlying bulk oxide composition by stripping away the fluorinated layer.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The drop is caused by the Ligand-Exchange Reaction with Trimethylaluminum (TMA).\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process is not viable at 200°C. The trade-off for the low thermal budget is a complete failure of the etch mechanism; the temperature must be raised to at least 250°C to activate the ligand exchange.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"NO, While the fluorination is shallow at 200°C, the AlOF₂⁻ profile (d) shows the removal step is incomplete, leaving a modified interface. For a 2 nm film, this residual modified layer constitutes a significant fraction of the total thickness, drastically altering the interface properties. A higher temperature (like 250°C) with complete removal, despite slightly deeper penetration, would better preserve the electrical properties of the underlying interface.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":6,"width":491,"height":436},{"panel_id":"b","x":491,"y":2,"width":365,"height":438},{"panel_id":"c","x":854,"y":4,"width":366,"height":440},{"panel_id":"d","x":5,"y":512,"width":483,"height":442},{"panel_id":"e","x":487,"y":505,"width":365,"height":445},{"panel_id":"f","x":848,"y":510,"width":381,"height":442}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/Surface reaction during thermal atomic layer etching of aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1230,"height":955,"image_format":"jpeg","image_sha256":"374d7ca7bbd1ec7f3331f23410f29b55c0aa9b7ed35d30dc6b3cc7fed85874e9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_45_figure_2.jpg","caption":"Figure 2. Mass changes during 10 consecutive HF exposures on $\\mathrm{TiO}_2$ ALD film at 200, 250, and $300^{\\circ}\\mathrm{C}$","id":"train/atomic-layer-etching/experimental-usecase/45/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/45/figure_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the mass change over time for 10 HF exposures on ALD TiO₂ at different temperatures (200°C, 250°C, and 300°C). The mass decreases over time, indicating a loss of material\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | 200°C (Mass Change, ng/cm^2) | 250°C (Mass Change, ng/cm^2) | 300°C (Mass Change, ng/cm^2) |\\n|---|---|---|---|\\n| 0 | 0 | 0 | 0 |\\n| 50 | -20 | -25 | -28 |\\n| 100 | -35 | -45 | -55 |\\n| 150 | -50 | -75 | -85 |\\n| 200 | -60 | -95 | -120 |\\n| 250 | -75 | -105 | -125 |\\n| 300 | -85 | -125 | -155 |\\n| 350 | -95 | -150 | -185 |\\n| 400 | -105 | -175 | -190 |\\n| 450 | -115 | -200 | -240 |\\n| 500 | -125 | -220 | -250 |\\n| 550 | -135 | -245 | -280 |\\n| 600 | -160 | -255 | -310 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Each step represents one discrete HF exposure pulse, with the flat regions corresponding to N₂ purge periods between exposures.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Higher temperatures increase the mass loss per HF exposure: −17 ng/cm² at 200°C, −25 ng/cm² at 250°C, and −32 ng/cm² at 300°C. This corresponds to TiO₂ removal of 0.45–0.85 Å per exposure, based on TiO₂ density of 3.76 g/cm³.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This result validates the core mechanism: if HF can spontaneously etch TiO₂ to form volatile TiF₄ and H₂O, then oxidizing TiN to TiO₂ first enables its removal. Without this spontaneous etching, the oxidation-fluorination ALE approach would not work.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reaction has ΔG° = −6.1 kcal/mol at 25°C (favorable) but becomes +6.3 kcal/mol at 250°C (unfavorable under standard conditions). However, etching still occurs because excess HF and rapid removal of volatile products (TiF₄, H₂O) by N₂ purge drive the reaction forward.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":667,"height":521}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/Thermal Atomic Layer Etching of Titanium Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":667,"height":523,"image_format":"jpeg","image_sha256":"3722465db5d82bf7c8f79e7e0640c7b16e0303179a870adf8e7b55730136ab39","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_534d04cd0f885c3fdd5f4aaca3bde4aea20cf962e714ca66eae14e7e8af77611.jpg","caption":"","id":"train/atomic-layer-etching/experimental-usecase/46/534d04cd0f885c3fdd5f4aaca3bde4aea20cf962e714ca66eae14e7e8af77611","sample_id":"atomic-layer-etching/experimental-usecase/46/534d04cd0f885c3fdd5f4aaca3bde4aea20cf962e714ca66eae14e7e8af77611","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents quartz crystal microbalance (QCM) data showing mass changes during chemical exposures at 170 °C. In panel (a), only BCl₃ or WF₆ dosing leads to mass gain or negligible change, and WF₆/Sn(acac)₂ cycling results in net deposition, whereas alternating WF₆ and BCl₃ produces a continuous linear mass loss, confirming atomic layer etching (ALE) of TiO₂.\"},{\"panel_id\":\"b\",\"text\":\"The image zooms into the ALE process, revealing a sawtooth profile in which the WF₆ pulse increases mass due to surface fluorination, followed by a sharp mass decrease during the BCl₃ pulse from ligand exchange and volatilization, yielding net material removal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass loading (ng/cm²) | Sample |\\n|---------:|----------------------:|--------|\\n| 16000 | 4228.46 | WF₆/BCl₃ |\\n| 16000 | 4664.16 | WF₆/Sn(acac)₂ |\\n| 16000 | 5358.22 | WF₆ doses |\\n| 16000 | 6120.32 | BCl₃ doses |\\n| 17000 | 4483.84 | WF₆/BCl₃ |\\n| 17000 | 4919.33 | WF₆/Sn(acac)₂ |\\n| 17000 | 5722.26 | WF₆ doses |\\n| 17000 | 6341.46 | BCl₃ doses |\\n| 18000 | 4773.03 | WF₆/BCl₃ |\\n| 18000 | 5211.92 | WF₆/Sn(acac)₂ |\\n| 18000 | 6011.45 | WF₆ doses |\\n| 18000 | 6776.95 | BCl₃ doses |\\n| 19000 | 4555.29 | WF₆/BCl₃ |\\n| 19000 | 5647.41 | WF₆/Sn(acac)₂ |\\n| 19000 | 6341.46 | WF₆ doses |\\n| 19000 | 6668.08 | BCl₃ doses |\\n| 20000 | 4300.12 | WF₆/BCl₃ |\\n| 20000 | 5613.38 | WF₆/Sn(acac)₂ |\\n| 20000 | 6375.48 | WF₆ doses |\\n| 20000 | | BCl₃ doses |\\n| 21000 | 3827.21 | WF₆/BCl₃ |\\n| 21000 | 5501.11 | WF₆/Sn(acac)₂ |\\n| 21000 | 6304.04 | WF₆ doses |\\n| 21000 | | BCl₃ doses |\\n| 22000 | 3279.45 | WF₆/BCl₃ |\\n| 22000 | 5245.94 | WF₆/Sn(acac)₂ |\\n| 22000 | 6266.16 | WF₆ doses |\\n| 22000 | | BCl₃ doses |\\n| 23000 | 2877.99 | WF₆/BCl₃ |\\n| 23000 | 5137.07 | WF₆/Sn(acac)₂ |\\n| 23000 | | WF₆ doses |\\n| 23000 | | BCl₃ doses |\\n| 24000 | 2333.63 | WF₆/BCl₃ |\\n| 24000 | 4956.75 | WF₆/Sn(acac)₂ |\\n| 24000 | | WF₆ doses |\\n| 24000 | | BCl₃ doses |\"},{\"panel_id\":\"b\",\"text\":\"| ALE cycle number | Mass loading (ng/cm²) | Pulse |\\n|-----------------:|----------------------:|-------|\\n| 20 | 4559.39 | WF₆ |\\n| 20 | 4629.66 | WF₆ |\\n| 20.5 | 4526.56 | BCl₃ |\\n| 20.5 | 4615.65 | BCl₃ |\\n| 21 | 4507.95 | WF₆ |\\n| 21 | 4542.97 | WF₆ |\\n| 21.5 | 4468.11 | BCl₃ |\\n| 21.5 | 4521.96 | BCl₃ |\\n| 22 | 4453.88 | WF₆ |\\n| 22 | 4491.53 | WF₆ |\\n| 22.5 | 4414.04 | BCl₃ |\\n| 22.5 | 4468.11 | BCl₃ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It would fail. The black line shows a positive slope (mass increase) over time, indicating that combining WF₆ and Sn(acac)₂ results in chemical vapor deposition (CVD) or film growth rather than etching. Substituting BCl₃ with Sn(acac)₂ would therefore add material instead of removing it.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 170 °C, WF₆ can fluorinate the TiO₂ surface, creating non-volatile metal fluorides or oxyfluorides and adding mass. However, without a second reagent such as BCl₃ to drive a ligand-exchange reaction and convert these surface species into volatile products (e.g., TiClₓ or volatile oxychlorides), the modified surface layer remains solid, blocking further etching.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Modification step: WF₆ exposure (mass increase).\\nRemoval step: BCl₃ exposure (mass decrease).\\nIdentification: The BCl₃ exposure is the removal step, indicated by the sharp drop in mass below the starting baseline of that cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cycles: Approximately 167 cycles (100 Å / 0.6 Å·cycle⁻¹). It is preferred for its digital controllability. A continuous wet etch is time-dependent and prone to under- or over-etching due to diffusion and timing errors, whereas ALE removes a fixed amount per cycle independent of time, enabling precise thickness control by simply counting cycles.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":6,"width":468,"height":370},{"panel_id":"b","x":481,"y":6,"width":469,"height":369}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/534d04cd0f885c3fdd5f4aaca3bde4aea20cf962e714ca66eae14e7e8af77611.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/534d04cd0f885c3fdd5f4aaca3bde4aea20cf962e714ca66eae14e7e8af77611.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"not_found"},"width":950,"height":375,"image_format":"jpeg","image_sha256":"61d4c4054b1aad81ed67b40ce28db4469fe2bb82d1ab1cd749ae613b468327ad","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_1.jpg","caption":"Figure 1. QCM analysis at $220^{\\circ}\\mathrm{C}$ of (a) 200 cycles of $\\mathrm{Al}_2\\mathrm{O}_3$ or $\\mathrm{TiO}_2$ followed immediately by $50\\mathrm{WF}_6 / \\mathrm{Ar}$ exposures of $1 / 60\\mathrm{s}$ each and (b) initial loading of $1\\mathrm{WF}_6$ exposure of $50\\mathrm{s}$ versus $50\\mathrm{WF}_6 / \\mathrm{Ar}$ exposures of $1 / 60\\mathrm{s}$ on $\\mathrm{TiO}_2$ (200 cycles).","id":"train/atomic-layer-etching/experimental-usecase/46/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_1","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents QCM data demonstrating material selectivity during WF₆ exposure at 220 °C. The TiO₂ film (red line) shows continuous mass loss, indicating etching, whereas the Al₂O₃ film (black line) exhibits an initial mass gain followed by saturation, indicating no etching.\"},{\"panel_id\":\"b\",\"text\":\"QCM data comparing WF₆ dosing strategies on TiO₂. Pulsed WF₆ dosing (red line) results in cumulative mass loss (etching), while the initial exposure (black line) is dominated by strong adsorption and fluorination, seen as a large mass gain before etching kinetics dominate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass loading (ng/cm²) | Sample | Condition |\\n|---------:|----------------------:|--------|-----------|\\n| 8000 | 3713.81 | Al₂O₃ | Metal Oxide ALD |\\n| 8000 | 2935.80 | TiO₂ | Metal Oxide ALD |\\n| 8500 | 3920.90 | Al₂O₃ | Metal Oxide ALD |\\n| 8500 | 3025.36 | TiO₂ | Metal Oxide ALD |\\n| 9000 | 4130.79 | Al₂O₃ | Metal Oxide ALD |\\n| 9000 | 3084.13 | TiO₂ | Metal Oxide ALD |\\n| 9500 | 4729.68 | Al₂O₃ | WF₆ Doses |\\n| 9500 | 3294.02 | TiO₂ | WF₆ Doses |\\n| 10000 | 4788.45 | Al₂O₃ | WF₆ Doses |\\n| 10000 | 3145.70 | TiO₂ | WF₆ Doses |\\n| 10500 | 4819.24 | Al₂O₃ | WF₆ Doses |\\n| 10500 | 3025.36 | TiO₂ | WF₆ Doses |\\n| 11000 | 4788.45 | Al₂O₃ | WF₆ Doses |\\n| 11000 | 2756.70 | TiO₂ | WF₆ Doses |\\n| 11500 | 4757.67 | Al₂O₃ | WF₆ Doses |\\n| 11500 | 2216.57 | TiO₂ | WF₆ Doses |\\n| 12000 | 4757.67 | Al₂O₃ | WF₆ Doses |\\n| 12000 | 1351.82 | TiO₂ | WF₆ Doses |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Mass loading (ng/cm²) | Condition |\\n|---------:|----------------------:|-----------|\\n| 18200 | 1546.58 | TiO₂ ALD |\\n| 18200 | 816.87 | 220 °C, 1.75 Torr |\\n| 18300 | 1566.23 | TiO₂ ALD |\\n| 18300 | 857.10 | 220 °C, 1.75 Torr |\\n| 18400 | 1566.23 | TiO₂ ALD |\\n| 18400 | 887.04 | 220 °C, 1.75 Torr |\\n| 18500 | 1806.66 | 50 WF₆ doses (1 s) |\\n| 18500 | 1106.89 | 1 WF₆ dose (50 s) |\\n| 18600 | 1796.37 | 50 WF₆ doses (1 s) |\\n| 18600 | 1117.18 | 1 WF₆ dose (50 s) |\\n| 18700 | 1776.72 | 50 WF₆ doses (1 s) |\\n| 18700 | 1136.82 | 1 WF₆ dose (50 s) |\\n| 18800 | 1726.21 | 50 WF₆ doses (1 s) |\\n| 18800 | 1136.82 | 1 WF₆ dose (50 s) |\\n| 18900 | 1706.56 | 50 WF₆ doses (1 s) |\\n| 18900 | 1147.11 | 1 WF₆ dose (50 s) |\\n| 19000 | 1676.72 | 50 WF₆ doses (1 s) |\\n| 19000 | 1156.47 | 1 WF₆ dose (50 s) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Selective pattern transfer. The TiO₂ film will be etched away, as indicated by the continuous mass loss (negative slope) in the red curve. The Al₂O₃ mask will remain intact and essentially unetched, as indicated by the black curve, which shows only stable mass gain due to surface fluorination. This confirms that WF₆ provides excellent selectivity for removing TiO₂ relative to Al₂O₃.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Etchability vs. inertness. TiO₂ (red line) is superior as a sacrificial spacer because it spontaneously etches in WF₆ at 220 °C, whereas Al₂O₃ (black line) is inert and resistant, meaning it would not be removed, failing the sacrificial requirement.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Surface fluorination/adsorption. The WF₆ molecules react with surface oxygen to form a heavy layer of non-volatile metal fluorides (TiFₓ) or tungsten oxyfluorides (WOₓFᵧ). This accumulation of heavy F and W atoms adds mass to the crystal before the slow volatilization step can remove any material.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Continuous vapor etching (CVE). True ALE requires a self-limiting mechanism where the etch stops after removing one layer. The red curve shows a steep, continuous linear drop in mass as long as WF₆ is pulsed, indicating that at 220 °C, the thermal energy is sufficient to drive the reaction continuously without stopping. This is a CVE process, not a self-limiting ALE process.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":1,"width":525,"height":416},{"panel_id":"b","x":506,"y":2,"width":542,"height":414}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1050,"height":422,"image_format":"jpeg","image_sha256":"10dae58b0704ae6d7f16fdf1e4f49ff207483d2b585d8b96b6528f342a31cd17","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_10.jpg","caption":"Figure 10. (a) QCM analysis at $170^{\\circ}\\mathrm{C}$ and 1.75 Torr of $\\mathrm{TiO_2}$ ALD followed by $25\\mathrm{BCl}_3 / \\mathrm{Ar}$ doses (pink), $50\\mathrm{WF}_6 / \\mathrm{Ar}$ doses (red), $50\\mathrm{WF}_6 / \\mathrm{Ar} / \\mathrm{Sn}(\\mathrm{acac})_2 / \\mathrm{Ar}$ cycles (black), or $50\\mathrm{WF}_6 / \\mathrm{Ar} / \\mathrm{BCl}_3 / \\mathrm{Ar}$ cycles (blue). (b) Enlarged view of the $\\mathrm{WF}_6 / \\mathrm{Ar} / \\mathrm{BCl}_3 / \\mathrm{Ar}$ etch sequence. (c) QCM of $\\mathrm{WF}_6 / \\mathrm{Ar} / \\mathrm{BCl}_3 / \\mathrm{Ar}$ sequence at 110, 130, 150, 170, and $190^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/46/figure_10","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_10","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"line chart"},{"panel_id":"c","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents quartz crystal microbalance (QCM) data showing mass changes during chemical exposures at 170 °C. In panel (a), only BCl₃ or WF₆ dosing leads to mass gain or negligible change, and WF₆/Sn(acac)₂ cycling results in net deposition, whereas alternating WF₆ and BCl₃ produces a continuous linear mass loss, confirming atomic layer etching (ALE) of TiO₂.\"},{\"panel_id\":\"b\",\"text\":\"The image zooms into the ALE process, revealing a sawtooth profile in which the WF₆ pulse increases mass due to surface fluorination, followed by a sharp mass decrease during the BCl₃ pulse from ligand exchange and volatilization, yielding net material removal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass loading (ng/cm²) | Sample |\\n|---------:|----------------------:|--------|\\n| 16000 | 4228.46 | WF₆/BCl₃ |\\n| 16000 | 4664.16 | WF₆/Sn(acac)₂ |\\n| 16000 | 5358.22 | WF₆ doses |\\n| 16000 | 6120.32 | BCl₃ doses |\\n| 17000 | 4483.84 | WF₆/BCl₃ |\\n| 17000 | 4919.33 | WF₆/Sn(acac)₂ |\\n| 17000 | 5722.26 | WF₆ doses |\\n| 17000 | 6341.46 | BCl₃ doses |\\n| 18000 | 4773.03 | WF₆/BCl₃ |\\n| 18000 | 5211.92 | WF₆/Sn(acac)₂ |\\n| 18000 | 6011.45 | WF₆ doses |\\n| 18000 | 6776.95 | BCl₃ doses |\\n| 19000 | 4555.29 | WF₆/BCl₃ |\\n| 19000 | 5647.41 | WF₆/Sn(acac)₂ |\\n| 19000 | 6341.46 | WF₆ doses |\\n| 19000 | 6668.08 | BCl₃ doses |\\n| 20000 | 4300.12 | WF₆/BCl₃ |\\n| 20000 | 5613.38 | WF₆/Sn(acac)₂ |\\n| 20000 | 6375.48 | WF₆ doses |\\n| 20000 | | BCl₃ doses |\\n| 21000 | 3827.21 | WF₆/BCl₃ |\\n| 21000 | 5501.11 | WF₆/Sn(acac)₂ |\\n| 21000 | 6304.04 | WF₆ doses |\\n| 21000 | | BCl₃ doses |\\n| 22000 | 3279.45 | WF₆/BCl₃ |\\n| 22000 | 5245.94 | WF₆/Sn(acac)₂ |\\n| 22000 | 6266.16 | WF₆ doses |\\n| 22000 | | BCl₃ doses |\\n| 23000 | 2877.99 | WF₆/BCl₃ |\\n| 23000 | 5137.07 | WF₆/Sn(acac)₂ |\\n| 23000 | | WF₆ doses |\\n| 23000 | | BCl₃ doses |\\n| 24000 | 2333.63 | WF₆/BCl₃ |\\n| 24000 | 4956.75 | WF₆/Sn(acac)₂ |\\n| 24000 | | WF₆ doses |\\n| 24000 | | BCl₃ doses |\"},{\"panel_id\":\"b\",\"text\":\"| ALE cycle number | Mass loading (ng/cm²) | Pulse |\\n|-----------------:|----------------------:|-------|\\n| 20 | 4559.39 | WF₆ |\\n| 20 | 4629.66 | WF₆ |\\n| 20.5 | 4526.56 | BCl₃ |\\n| 20.5 | 4615.65 | BCl₃ |\\n| 21 | 4507.95 | WF₆ |\\n| 21 | 4542.97 | WF₆ |\\n| 21.5 | 4468.11 | BCl₃ |\\n| 21.5 | 4521.96 | BCl₃ |\\n| 22 | 4453.88 | WF₆ |\\n| 22 | 4491.53 | WF₆ |\\n| 22.5 | 4414.04 | BCl₃ |\\n| 22.5 | 4468.11 | BCl₃ |\"},{\"panel_id\":\"c\",\"text\":\"| Time (s) | Mass loading (ng/cm²) | Condition | Temperature |\\n|---------:|----------------------:|-------------------------------|-------------|\\n| 3000 | 696.55 | TiO₂ ALD (TiCl₄/H₂O) | 110 °C |\\n| 3000 | 759.00 | TiO₂ ALD (TiCl₄/H₂O) | 130 °C |\\n| 3000 | 905.00 | TiO₂ ALD (TiCl₄/H₂O) | 150 °C |\\n| 3000 | 821.45 | TiO₂ ALD (TiCl₄/H₂O) | 170 °C |\\n| 3000 | 852.67 | TiO₂ ALD (TiCl₄/H₂O) | 190 °C |\\n| 4000 | 1051.71 | TiO₂ ALD (TiCl₄/H₂O) | 110 °C |\\n| 4000 | 1062.44 | TiO₂ ALD (TiCl₄/H₂O) | 130 °C |\\n| 4000 | 1114.16 | TiO₂ ALD (TiCl₄/H₂O) | 150 °C |\\n| 4000 | 1093.67 | TiO₂ ALD (TiCl₄/H₂O) | 170 °C |\\n| 4000 | 1093.67 | TiO₂ ALD (TiCl₄/H₂O) | 190 °C |\\n| 5000 | 1260.51 | TiO₂ ALE (WF₆/BCl₃) | 110 °C |\\n| 5000 | 1240.02 | TiO₂ ALE (WF₆/BCl₃) | 130 °C |\\n| 5000 | 1166.85 | TiO₂ ALE (WF₆/BCl₃) | 150 °C |\\n| 5000 | 1093.67 | TiO₂ ALE (WF₆/BCl₃) | 170 °C |\\n| 5000 | 1020.49 | TiO₂ ALE (WF₆/BCl₃) | 190 °C |\\n| 6000 | 1135.62 | TiO₂ ALE (WF₆/BCl₃) | 110 °C |\\n| 6000 | 1082.93 | TiO₂ ALE (WF₆/BCl₃) | 130 °C |\\n| 6000 | 947.31 | TiO₂ ALE (WF₆/BCl₃) | 150 °C |\\n| 6000 | 727.78 | TiO₂ ALE (WF₆/BCl₃) | 170 °C |\\n| 6000 | 518.98 | TiO₂ ALE (WF₆/BCl₃) | 190 °C |\\n| 7000 | | TiO₂ ALE (WF₆/BCl₃) | 110 °C |\\n| 7000 | 925.85 | TiO₂ ALE (WF₆/BCl₃) | 130 °C |\\n| 7000 | 800.96 | TiO₂ ALE (WF₆/BCl₃) | 150 °C |\\n| 7000 | 414.58 | TiO₂ ALE (WF₆/BCl₃) | 170 °C |\\n| 7000 | -55.70 | TiO₂ ALE (WF₆/BCl₃) | 190 °C |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"WF₆ dose\\n\\nAr purge\\n\\nBCl₃ dose\\n\\nAr purge\\n\\nTemperature control is critical because it directly governs the reaction kinetics and ensures the process remains self-limiting.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The self-limiting ALE process at 170°C is required for perfect conformality in high-aspect-ratio structures. Its layer-by-layer nature ensures uniform etching down the trench sidewalls. The trade-off is a much slower etch rate (~0.6 Å/cycle) compared to the rapid, isotropic material removal of the continuous CVE process at 220°C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate (mass loss per cycle) increases significantly with temperature. This is due to the Arrhenius behavior of the surface reactions: higher thermal energy accelerates the fluorination of TiO₂ by WF₆ and the subsequent removal of the modified layer by BCl₃, leading to more complete reactions per cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This high selectivity means the ALE process can precisely and completely remove the TiO₂ spacer while using the Al₂O₃ layer as a reliable etch stop. This enables the fabrication of more scaled transistor architectures by allowing the selective etching of one oxide without damaging other critical oxide layers in the stack.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":513,"height":410},{"panel_id":"b","x":534,"y":0,"width":509,"height":414},{"panel_id":"c","x":217,"y":449,"width":576,"height":428}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1044,"height":878,"image_format":"jpeg","image_sha256":"e80895aae58796e05f33c82fdf19aac9a1d900379e57147db803f5e64f57dafb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_11.jpg","caption":"Figure 11. Thermodynamic modeling results showing the expected equilibrium species concentrations from 25 to $400^{\\circ}C$ for (a) reactions 2 and 3, exposing $\\mathbb{N}_2$ -diluted $\\mathrm{BCl}_3$ at 1.5 Torr to $\\mathrm{TiF_4 / WO_3}$ .. $3\\mathrm{mol}$ of $\\mathrm{BCl}_3(\\mathrm{g}) + 1$ mol of $\\mathrm{TiF_4(s) + 1}$ mol of $\\mathrm{WO}_3(\\mathrm{s})$ ; and (b) the analogous reactions for the $\\mathrm{Al}_2\\mathrm{O}_3$ system: 3 mol of $\\mathrm{BCl}_3(\\mathrm{g}) + 1$ mol of $\\mathrm{AlF}_3(\\mathrm{s}) + 1$ mol of $\\mathrm{WO}_3(\\mathrm{s})$ . At equilibrium at $170^{\\circ}\\mathrm{C},$ $\\mathrm{BCl}_3 + \\mathrm{TiF}_4 / \\mathrm{WO}_3$ produces predominantly volatile $\\mathrm{BF}_3,$ $\\mathrm{TiCl}_4,$ and $\\mathrm{WOCl_4}$ and solid $\\mathrm{B}_2\\mathrm{O}_3$","id":"train/atomic-layer-etching/experimental-usecase/46/figure_11","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_11","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"TiO₂ System: At 170 °C, the reaction of BCl₃ with fluorinated TiO₂ surface species produces exclusively volatile products such as TiCl₄ (black line) and WOCl₄ (red line), along with solid B₂O₃. The absence of solid titanium species confirms that etching is thermodynamically favorable.\"},{\"panel_id\":\"b\",\"text\":\"Al₂O₃ System: At 170 °C, aluminum remains as solid AlF₃ (purple line), and significant formation of volatile AlCl₃ (black line) occurs only above 300 °C. This explains the selectivity: Ti-fluorides volatilize at low temperatures, whereas Al-fluorides do not.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Equilibrium Phase Concentration (mol) | Material |\\n|-----------------:|---------------------------------------:|----------|\\n| 0 | 1.30 | BF₃ |\\n| 0 | 1.00 | TiCl₄ |\\n| 0 | 0.65 | B₂O₃ |\\n| 0 | 0.30 | BCl₃ |\\n| 0 | 0.05 | WO₃ |\\n| 0 | 0.90 | WOCl₄ |\\n| 0 | 0.00 | WO₂Cl₂ |\\n| 100 | 1.30 | BF₃ |\\n| 100 | 1.00 | TiCl₄ |\\n| 100 | 0.65 | B₂O₃ |\\n| 100 | 0.30 | BCl₃ |\\n| 100 | 0.05 | WO₃ |\\n| 100 | 0.90 | WOCl₄ |\\n| 100 | 0.00 | WO₂Cl₂ |\\n| 200 | 1.30 | BF₃ |\\n| 200 | 1.00 | TiCl₄ |\\n| 200 | 0.65 | B₂O₃ |\\n| 200 | 0.32 | BCl₃ |\\n| 200 | 0.05 | WO₃ |\\n| 200 | 0.85 | WOCl₄ |\\n| 200 | 0.05 | WO₂Cl₂ |\\n| 300 | 1.30 | BF₃ |\\n| 300 | 1.00 | TiCl₄ |\\n| 300 | 0.60 | B₂O₃ |\\n| 300 | 0.40 | BCl₃ |\\n| 300 | 0.05 | WO₃ |\\n| 300 | 0.60 | WOCl₄ |\\n| 300 | 0.30 | WO₂Cl₂ |\\n| 350 | 1.30 | BF₃ |\\n| 350 | 1.00 | TiCl₄ |\\n| 350 | 0.45 | B₂O₃ |\\n| 350 | 0.55 | BCl₃ |\\n| 350 | 0.05 | WO₃ |\\n| 350 | 0.35 | WOCl₄ |\\n| 350 | 0.60 | WO₂Cl₂ |\\n| 400 | 1.30 | BF₃ |\\n| 400 | 1.00 | TiCl₄ |\\n| 400 | 0.35 | B₂O₃ |\\n| 400 | 0.80 | BCl₃ |\\n| 400 | 0.05 | WO₃ |\\n| 400 | 0.15 | WOCl₄ |\\n| 400 | 0.90 | WO₂Cl₂ |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | Equilibrium Phase Concentration (mol) | Material |\\n|-----------------:|---------------------------------------:|----------|\\n| 0 | 1.65 | BCl₃ |\\n| 0 | 1.00 | AlF₃ |\\n| 0 | 0.65 | B₂O₃ |\\n| 0 | 0.05 | AlCl₃ |\\n| 0 | 0.85 | WOCl₄ |\\n| 0 | 0.00 | WO₂Cl₂ |\\n| 0 | 0.00 | BF₃ |\\n| 100 | 1.65 | BCl₃ |\\n| 100 | 1.00 | AlF₃ |\\n| 100 | 0.65 | B₂O₃ |\\n| 100 | 0.05 | AlCl₃ |\\n| 100 | 0.85 | WOCl₄ |\\n| 100 | 0.00 | WO₂Cl₂ |\\n| 100 | 0.00 | BF₃ |\\n| 200 | 1.65 | BCl₃ |\\n| 200 | 1.00 | AlF₃ |\\n| 200 | 0.65 | B₂O₃ |\\n| 200 | 0.05 | AlCl₃ |\\n| 200 | 0.85 | WOCl₄ |\\n| 200 | 0.05 | WO₂Cl₂ |\\n| 200 | 0.05 | BF₃ |\\n| 300 | 1.68 | BCl₃ |\\n| 300 | 1.00 | AlF₃ |\\n| 300 | 0.60 | B₂O₃ |\\n| 300 | 0.05 | AlCl₃ |\\n| 300 | 0.60 | WOCl₄ |\\n| 300 | 0.30 | WO₂Cl₂ |\\n| 300 | 0.20 | BF₃ |\\n| 350 | 1.70 | BCl₃ |\\n| 350 | 1.00 | AlF₃ |\\n| 350 | 0.45 | B₂O₃ |\\n| 350 | 0.05 | AlCl₃ |\\n| 350 | 0.35 | WOCl₄ |\\n| 350 | 0.60 | WO₂Cl₂ |\\n| 350 | 0.60 | BF₃ |\\n| 400 | 1.50 | BCl₃ |\\n| 400 | 1.00 | AlF₃ |\\n| 400 | 0.30 | B₂O₃ |\\n| 400 | 0.05 | AlCl₃ |\\n| 400 | 0.20 | WOCl₄ |\\n| 400 | 0.75 | WO₂Cl₂ |\\n| 400 | 0.90 | BF₃ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiCl₄ (Titanium Tetrachloride).Temperature: It is stable and maximized across the entire temperature range shown (from 25 °C upwards), indicating very favorable thermodynamics.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Thermodynamic selectivity. At 200 °C, the TiCl₄ concentration in panel (a) is high (≈1.0 mol), indicating that titanium is efficiently driven into the gas phase. In contrast, in panel (b), the AlCl₃ concentration is effectively zero, with aluminum remaining trapped as solid AlF₃, providing a robust thermodynamic etch stop.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"From the tungsten oxide (WO₃). The WO₃ acts as an oxygen source, which is scavenged by boron from BCl₃ to form stable solid B₂O₃, while tungsten forms volatile oxychlorides (WOCl₄).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies BCl₃ acts as the coreactant that removes the modified surface layer. After WF₆ fluorinates TiO₂ to form a TiF₄-like surface, BCl₃ exchanges fluorine for chlorine, producing volatile TiCl₄ and regenerating the surface for the next WF₆ dose. The thermodynamic drive for this exchange exists for TiO₂ but not for Al₂O₃, enabling selective ALE.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":2,"width":498,"height":403},{"panel_id":"b","x":507,"y":5,"width":502,"height":400}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1011,"height":408,"image_format":"jpeg","image_sha256":"4e750a2adac5f0a2abb9c48a053711a9a25472604d5de62359c63c7307ba32ab","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_12.jpg","caption":"Figure 12. (a) QCM analysis of $\\mathrm{Al}_2\\mathrm{O}_3$ and $\\mathrm{TiO}_2$ ALD followed by $50\\mathrm{WF}_6 / \\mathrm{BCl}_3$ ALE cycles at $170^{\\circ}\\mathrm{C}$ . The ALE sequence follows $\\mathrm{WF}_6 / \\mathrm{Ar} / \\mathrm{BCl}_3 / \\mathrm{Ar}$ $(0.2 / 45 / 2.5 / 60\\mathrm{s})$ . (b) Enlarged view of (a).","id":"train/atomic-layer-etching/experimental-usecase/46/figure_12","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_12","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure uses Quartz Crystal Microbalance (QCM) data to demonstrate the selective etching of Titanium Dioxide (TiO₂) over Aluminum Oxide (Al₂O₃) at 170 °C. The image shows the full process timeline. Both materials are first deposited via ALD (staircase growth). Upon switching to the ALE recipe (WF₆/BCl₃), TiO₂ (red line) immediately begins to lose mass linearly (etching), while Al₂O₃ (black line) gains a small amount of mass and then remains stable (resistant).\"},{\"panel_id\":\"b\",\"text\":\"A magnified view of the first few ALE cycles. TiO₂ loses mass in every cycle (sawtooth down), whereas Al₂O₃ gains mass during the WF₆ pulse and barely loses it during the BCl₃ pulse, confirming the formation of a stable, non-volatile fluoride layer on aluminum.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass loading (ng cm⁻²) | Material | Process condition |\\n|---------:|-----------------------:|----------|-------------------|\\n| 8000 | 1500 | Al₂O₃ | Metal oxide ALD |\\n| 8000 | 950 | TiO₂ | Metal oxide ALD |\\n| 8500 | 1700 | Al₂O₃ | Metal oxide ALD |\\n| 8500 | 1050 | TiO₂ | Metal oxide ALD |\\n| 9000 | 2100 | Al₂O₃ | Metal oxide ALD |\\n| 9000 | 1200 | TiO₂ | Metal oxide ALD |\\n| 9500 | 2500 | Al₂O₃ | WF₆/BCl₃ ALE |\\n| 9500 | 1100 | TiO₂ | WF₆/BCl₃ ALE |\\n| 10000 | 2500 | Al₂O₃ | WF₆/BCl₃ ALE |\\n| 10000 | 900 | TiO₂ | WF₆/BCl₃ ALE |\\n| 10500 | 2500 | Al₂O₃ | WF₆/BCl₃ ALE |\\n| 10500 | 750 | TiO₂ | WF₆/BCl₃ ALE |\\n| 11000 | 2500 | Al₂O₃ | WF₆/BCl₃ ALE |\\n| 11000 | 650 | TiO₂ | WF₆/BCl₃ ALE |\\n| 11500 | 2500 | Al₂O₃ | WF₆/BCl₃ ALE |\\n| 11500 | 500 | TiO₂ | WF₆/BCl₃ ALE |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Mass loading (ng cm⁻²) | Material | Cyclic condition |\\n|---------:|-----------------------:|----------|------------------|\\n| 9000 | 1500 | Al₂O₃ | ALD |\\n| 9000 | 1200 | TiO₂ | ALD |\\n| 9100 | 1550 | Al₂O₃ | ALD |\\n| 9100 | 1250 | TiO₂ | ALD |\\n| 9200 | 1850 | Al₂O₃ | WF₆ |\\n| 9200 | 1400 | TiO₂ | WF₆ |\\n| 9250 | 1800 | Al₂O₃ | BCl₃ |\\n| 9250 | 1250 | TiO₂ | BCl₃ |\\n| 9300 | 1850 | Al₂O₃ | WF₆ |\\n| 9300 | 1300 | TiO₂ | WF₆ |\\n| 9350 | 1800 | Al₂O₃ | BCl₃ |\\n| 9350 | 1200 | TiO₂ | BCl₃ |\\n| 9400 | 1850 | Al₂O₃ | WF₆ |\\n| 9400 | 1250 | TiO₂ | WF₆ |\\n| 9450 | 1800 | Al₂O₃ | BCl₃ |\\n| 9450 | 1150 | TiO₂ | BCl₃ |\\n| 9500 | 1850 | Al₂O₃ | WF₆ |\\n| 9500 | 1200 | TiO₂ | WF₆ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mass jump / no etch. No, it does not lose mass. Instead, it shows a distinct upward jump (mass gain) of ~300 ng/cm² initially, followed by a stable plateau. This indicates surface fluorination (adsorption) rather than material removal.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thermal WF₆/BCl₃ ALE process is superior. Its purely chemical, self-limiting nature ensures perfect conformality in high-aspect-ratio structures without the directional ion damage inherent to plasma etching, which can degrade sidewall quality and introduce defects in sensitive nanostructures.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TiO₂ mass decreases because its fluorination/chlorination products (e.g., TiF₄ and TiCl₄) are volatile at 170°C, allowing material removal. Al₂O₃ mass remains stable because its potential reaction products (e.g., AlF₃, AlCl₃) are non-volatile at this temperature, causing the surface reactions to self-passivate rather than etch.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the process can precisely remove the TiO₂ spacer while using the Al₂O₃ layer as a perfect etch stop. This enables the creation of self-aligned, scaled transistor architectures by selectively etching one material without damaging the other, a critical capability for advanced manufacturing.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":1,"width":527,"height":417},{"panel_id":"b","x":512,"y":4,"width":538,"height":411}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1053,"height":422,"image_format":"jpeg","image_sha256":"2b60cb3d505de57d297c9a99cad071bcb6c4dc1f3c35120e88066d9e6421b77c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_2.jpg","caption":"Figure 2. Thermodynamic modeling results showing the expected equilibrium species concentrations from 25 to $400^{\\circ}\\mathrm{C}$ for $\\mathrm{N}_2$ -diluted $\\mathrm{WF}_6$ exposed to $\\mathrm{TiO}_2$ or $\\mathrm{Al}_2\\mathrm{O}_3$ at $P = 1.5$ Torr: (a) $1\\mathrm{mol}$ $\\mathrm{WF}_6 + 1\\mathrm{mol}$ $\\mathrm{TiO}_2$ and (b) $1\\mathrm{mol}$ $\\mathrm{WF}_6 + 0.667\\mathrm{mol}$ $\\mathrm{Al}_2\\mathrm{O}_3$ .","id":"train/atomic-layer-etching/experimental-usecase/46/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Equilibrium analysis for the WF₆–TiO₂ system shows a temperature-dependent transition from solid TiF₄(s) to gaseous TiF₄(g) above ~120 °C, enabling etching; at higher temperatures, tungsten oxide byproducts such as WO₃(s) convert to volatile species (e.g., WF₂O₂(g)).\"},{\"panel_id\":\"b\",\"text\":\"Equilibrium analysis for the WF₆–Al₂O₃ system shows that AlF₃(s) remains solid and stable over the entire temperature range, indicating fluorination without volatilization or etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Equilibrium Concentration (mol) | Material |\\n|------------------|----------------------------------|----------------|\\n| 0 | 1.00 | TiF₄ (s) |\\n| 0 | 0.00 | TiF₄ (g) |\\n| 0 | 0.65 | WO₃ (s) |\\n| 0 | 0.30 | WF₆ (g) |\\n| 0 | 0.00 | WF₂O₂ (g) |\\n| 50 | 1.00 | TiF₄ (s) |\\n| 50 | 0.00 | TiF₄ (g) |\\n| 50 | 0.65 | WO₃ (s) |\\n| 50 | 0.30 | WF₆ (g) |\\n| 50 | 0.00 | WF₂O₂ (g) |\\n| 100 | 0.00 | TiF₄ (s) |\\n| 100 | 1.00 | TiF₄ (g) |\\n| 100 | 0.65 | WO₃ (s) |\\n| 100 | 0.30 | WF₆ (g) |\\n| 100 | 0.00 | WF₂O₂ (g) |\\n| 150 | 0.00 | TiF₄ (s) |\\n| 150 | 1.00 | TiF₄ (g) |\\n| 150 | 0.60 | WO₃ (s) |\\n| 150 | 0.25 | WF₆ (g) |\\n| 150 | 0.10 | WF₂O₂ (g) |\\n| 200 | 0.00 | TiF₄ (s) |\\n| 200 | 1.00 | TiF₄ (g) |\\n| 200 | 0.40 | WO₃ (s) |\\n| 200 | 0.20 | WF₆ (g) |\\n| 200 | 0.40 | WF₂O₂ (g) |\\n| 250 | 0.00 | TiF₄ (s) |\\n| 250 | 1.00 | TiF₄ (g) |\\n| 250 | 0.10 | WO₃ (s) |\\n| 250 | 0.05 | WF₆ (g) |\\n| 250 | 0.90 | WF₂O₂ (g) |\\n| 300 | 0.00 | TiF₄ (s) |\\n| 300 | 1.00 | TiF₄ (g) |\\n| 300 | 0.00 | WO₃ (s) |\\n| 300 | 0.00 | WF₆ (g) |\\n| 300 | 1.00 | WF₂O₂ (g) |\\n| 350 | 0.00 | TiF₄ (s) |\\n| 350 | 1.00 | TiF₄ (g) |\\n| 350 | 0.00 | WO₃ (s) |\\n| 350 | 0.00 | WF₆ (g) |\\n| 350 | 1.00 | WF₂O₂ (g) |\\n| 400 | 0.00 | TiF₄ (s) |\\n| 400 | 1.00 | TiF₄ (g) |\\n| 400 | 0.00 | WO₃ (s) |\\n| 400 | 0.00 | WF₆ (g) |\\n| 400 | 1.00 | WF₂O₂ (g) |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | Equilibrium Concentration (mol) | Material |\\n|------------------|----------------------------------|----------------|\\n| 0 | 1.30 | AlF₃ (s) |\\n| 0 | 0.65 | WO₃ (s) |\\n| 0 | 0.30 | WF₆ (g) |\\n| 0 | 0.00 | WF₂O₂ (g) |\\n| 50 | 1.30 | AlF₃ (s) |\\n| 50 | 0.65 | WO₃ (s) |\\n| 50 | 0.30 | WF₆ (g) |\\n| 50 | 0.00 | WF₂O₂ (g) |\\n| 100 | 1.30 | AlF₃ (s) |\\n| 100 | 0.65 | WO₃ (s) |\\n| 100 | 0.30 | WF₆ (g) |\\n| 100 | 0.00 | WF₂O₂ (g) |\\n| 150 | 1.30 | AlF₃ (s) |\\n| 150 | 0.60 | WO₃ (s) |\\n| 150 | 0.25 | WF₆ (g) |\\n| 150 | 0.10 | WF₂O₂ (g) |\\n| 200 | 1.30 | AlF₃ (s) |\\n| 200 | 0.40 | WO₃ (s) |\\n| 200 | 0.20 | WF₆ (g) |\\n| 200 | 0.40 | WF₂O₂ (g) |\\n| 250 | 1.30 | AlF₃ (s) |\\n| 250 | 0.10 | WO₃ (s) |\\n| 250 | 0.05 | WF₆ (g) |\\n| 250 | 0.90 | WF₂O₂ (g) |\\n| 300 | 1.30 | AlF₃ (s) |\\n| 300 | 0.00 | WO₃ (s) |\\n| 300 | 0.00 | WF₆ (g) |\\n| 300 | 1.00 | WF₂O₂ (g) |\\n| 350 | 1.30 | AlF₃ (s) |\\n| 350 | 0.00 | WO₃ (s) |\\n| 350 | 0.00 | WF₆ (g) |\\n| 350 | 1.00 | WF₂O₂ (g) |\\n| 400 | 1.30 | AlF₃ (s) |\\n| 400 | 0.00 | WO₃ (s) |\\n| 400 | 0.00 | WF₆ (g) |\\n| 400 | 1.00 | WF₂O₂ (g) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 120°C.Reason: Below this temperature, the byproduct TiF4 is solid. Instead of removing material (etching), the process would simply convert the surface into a crust of solid fluoride salts, potentially increasing the film thickness and creating particles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The equilibrium model may predict low volatility at lower temperatures (e.g., 170°C). However, ALE bypasses this by using a sequential, non-equilibrium process. The BCl₃ step in ALE actively removes the fluorinated surface layer (e.g., as TiCl₄), shifting the local equilibrium and driving the reaction forward kinetically, enabling etching at temperatures where a continuous, equilibrium-driven process would stall.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The modeling predicts that the TiO₂ system forms volatile products like TiF₄(g) and WOFₓ(g), while the Al₂O₃ system forms non-volatile solids like AlF₃(s) or Al₂O₃(s) remains. This difference in product volatility is the thermodynamic origin of etching selectivity: TiO₂ can be removed as gases, whereas Al₂O₃ forms a stable, non-volatile layer that halts the reaction.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This provides a built-in etch stop capability. Engineers can design a stack where a thin Al₂O₃ layer is placed beneath or adjacent to the TiO₂ layer intended for removal. The WF₆-based etch will spontaneously stop on the Al₂O₃, allowing for precise, self-aligned patterning without the need for complex real-time endpoint detection, simplifying integration and improving yield.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":527,"height":423},{"panel_id":"b","x":529,"y":4,"width":522,"height":420}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1053,"height":428,"image_format":"jpeg","image_sha256":"0be6dc1b88b9796a265dbd90fc2cb612b9ab88b6174c0af8f83688e69f57103c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_3.jpg","caption":"Figure 3. (a) QCM analysis of $\\mathrm{TiO_2}$ ALD followed by $50~\\mathrm{WF}_6$ doses at 120 and $220^{\\circ}C$ and (b) an enlarged view of the mass loading during the $\\mathrm{WF}_6$ doses, showing net mass loss during each $\\mathrm{WF}_6$ step at $220^{\\circ}C$ and little to no change at $120^{\\circ}C$","id":"train/atomic-layer-etching/experimental-usecase/46/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart represents the QCM data showing TiO₂ mass changes during ALD and subsequent WF₆ doses at 120°C and 220°C; only the 220°C sample exhibits noticeable mass loss per dose, indicating active etching.\"},{\"panel_id\":\"b\",\"text\":\"Magnified view of the WF₆ dosing period; 220°C shows stepwise mass loss (etching), while 120°C shows negligible change, confirming the reaction is thermally activated.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass Loading (ng/cm²) | Temperature (°C) | Condition |\\n|---------:|-----------------------|------------------|-----------|\\n| 18000 | 5200 | 120 |TiO₂ ALD |\\n| 18000 | 4000 | 220 |TiO₂ ALD |\\n| 18500 | 5500 | 120 | TiO₂ ALD |\\n| 18500 | 4200 | 220 | TiO₂ ALD |\\n| 19000 | 5650 | 120 | WF₆ dose |\\n| 19000 | 4100 | 220 | WF₆ dose |\\n| 19500 | 5750 | 120 | WF₆ dose |\\n| 19500 | 3950 | 220 | WF₆ dose |\\n| 20000 | 5800 | 120 | WF₆ dose |\\n| 20000 | 3700 | 220 | WF₆ dose |\\n| 20500 | 5800 | 120 | WF₆ dose |\\n| 20500 | 3300 | 220 | WF₆ dose |\\n| 21000 | 5800 | 120 | WF₆ dose |\\n| 21000 | 2600 | 220 | WF₆ dose |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Mass Loading (ng/cm²) | Temperature (°C) | Condition |\\n|---------:|-----------------------|------------------|-----------|\\n| 19920 | 5820 | 120 | |\\n| 19920 | 5720 | 220 | |\\n| 19940 | 5820 | 120 | WF₆ |\\n| 19940 | 5736 | 220 | WF₆|\\n| 19960 | 5820 | 120 | |\\n| 19960 | 5679 | 220 | |\\n| 20000 | 5820 | 120 | WF₆ |\\n| 20000 | 5700 | 220 | WF₆ |\\n| 20040 | 5820 | 120 | |\\n| 20040 | 5650 | 220 | |\\n| 20060 | 5820 | 120 | WF₆ |\\n| 20060 | 5658 | 220 | WF₆ |\\n| 20080 | 5820 | 120 | |\\n| 20080 | 5600 | 220 | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Deposit a TiO₂ film on the QCM sensor via ALD.\\n\\nStabilize the system at 220°C and the desired pressure.\\n\\nExpose the film to a sequence of 50 WF₆ doses, each followed by an inert purge.\\n\\nContinuously record the QCM frequency (converted to mass loading) throughout the dose sequence.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The lower temperature (120°C) is forced to protect the polymers. The trade-off is that no etching occurs at this temperature, so the desired material removal cannot be achieved with thermal WF₆ alone. An alternative approach, such as using a more reactive chemistry or a non-thermal activation method (like plasma), would be required, introducing complexity or potential damage.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies that a purely thermal WF₆ etch process is not compatible with such a low thermal budget. Since significant etching only occurs at 220°C, exceeding the 150°C limit, integration would require a fundamental process change. Options include performing the etch earlier in the flow (before temperature-sensitive layers) or developing a plasma-assisted WF₆ process that could lower the required substrate temperature.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Temperature drastically affects the etching rate. At 220°C, etching proceeds readily, while at 120°C, it is negligible. This is because the reaction is thermally activated; sufficient thermal energy is required to overcome the activation barrier for breaking Ti–O bonds and forming volatile titanium fluoride (TiF₄) and tungsten oxyfluoride products.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":530,"height":403},{"panel_id":"b","x":523,"y":7,"width":521,"height":394}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1050,"height":408,"image_format":"jpeg","image_sha256":"fe41672f1fc68795d2966f97ed76e1eb88a99d414fc1971156e50480ef554a6e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_7.jpg","caption":"Figure 7. (a) QCM analysis of $\\mathrm{WF}_6$ etching following 50, 100, and $200\\mathrm{TiO}_2$ ALD cycles on a bare Au QCM crystal at $220^{\\circ}C$ and 1.75 Torr. (b) Enlarged view of $\\mathrm{WF}_6$ etching showing an \"incubation\" period for the vapor etching that is dependent on the initial $\\mathrm{TiO}_2$ film thickness.","id":"train/atomic-layer-etching/experimental-usecase/46/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_7","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"QCM data showing TiO₂ etching for different thicknesses (50, 100, 200 ALD cycles) at 220 °C. Thin films etch immediately, while thick films show an incubation period (mass gain/plateau) before etching due to crystallization increasing chemical resistance.\"},{\"panel_id\":\"b\",\"text\":\"This mutliple line chart focusing on the mass loading of TiO₂ cycles and WF₆ doses over time, highlighting the effect of 50 doses at specific intervals.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Mass Loading (ng/cm²) | Condition |\\n|---------:|----------------------|-----------|\\n| 0 | 0 | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 0 | 0 | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 0 | 0 | 200 TiO₂ cycles + 50 WF₆ doses |\\n| 2000 | 250 | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 2000 | 90 | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 2000 |355 | 200 TiO₂ cycles + 50 WF₆ doses |\\n| 4000 | 552 | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 4000 | 405 | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 4000 | 700 | 200 TiO₂ cycles + 50 WF₆ doses |\\n| 6000 | 234 | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 6000 | 675 | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 6000 | 1100 | 200 TiO₂ cycles + 50 WF₆ doses |\\n| 8000 | 220 | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 8000 | 1555 | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 8000 | 1500 | 200 TiO₂ cycles + 50 WF₆ doses |\\n| 10000 | | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 10000 | 300 | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 10000 | 2000 | 200 TiO₂ cycles + 50 WF₆ doses |\\n| 12000 | | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 12000 | 0 | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 12000 | 2100 | 200 TiO₂ cycles + 50 WF₆ doses |\\n| 16000 | | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 16000 | | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 16000 | 3400 | 200 TiO₂ cycles + 50 WF₆ doses |\\n| 18000 | | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 18000 | | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 18000 | 3800 | 200 TiO₂ cycles + 50 WF₆ doses |\\n| 22000 | | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 22000 | | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 22000 | 3200 | 200 TiO₂ cycles + 50 WF₆ doses |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Mass Loading (ng/cm²) | Condition |\\n|---------:|----------------------|-----------|\\n| 200 | 500 | 50 TiO₂ cycles |\\n| 200 | 1700 | 100 TiO₂ cycles |\\n| 200 | 3300 | 200 TiO₂ cycles |\\n| 400 | 590 | 50 TiO₂ cycles |\\n| 400 | 1872 | 100 TiO₂ cycles |\\n| 400 | 3332 | 200 TiO₂ cycles |\\n| 600 | 680 | 50 TiO₂ cycles |\\n| 600 | 2096 | 100 TiO₂ cycles |\\n| 600 | 3500 | 200 TiO₂ cycles |\\n| 800 | 340 | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 800 | 1850 | 100 TiO₂ cycles + 50 WF₆ doses|\\n| 800 | 3600 | 200 TiO₂ cycles + 50 WF₆ doses |\\n| 1000 | 325 | 50 TiO₂ cycles + 50 WF₆ doses|\\n| 1000 | 1700 | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 1000 | 3620 | 200 TiO₂ cycles + 50 WF₆ doses|\\n| 1200 | 280 | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 1200 | 1500 | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 1200 | 3600 | 200 TiO₂ cycles + 50 WF₆ doses |\\n| 1400 | 258 | 50 TiO₂ cycles + 50 WF₆ doses |\\n| 1400 | 1200 | 100 TiO₂ cycles + 50 WF₆ doses |\\n| 1400 | 3600 | 200 TiO₂ cycles + 50 WF₆ doses |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The WF₆ vapor etch process introduces a significant challenge. In an ideal ALE process, each cycle removes a fixed thickness regardless of initial film thickness. Here, the thickness-dependent incubation means etching would initiate at different times across the wafer if the starting thickness varies, leading to severe non-uniformity. The trade-off for using this simpler vapor etch is loss of uniformity control.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Surface fluorination. The WF₆ reacts with the surface to form solid fluorides (TiFₓ) or adsorbed tungsten species. Because the underlying film is resistant (incubation), these heavy species accumulate on the surface, adding mass before the volatilization reaction (TiF₄ ↑) initiates material removal.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Crystalline resistance. The 50-cycle film is likely amorphous (disordered structure), making it chemically vulnerable and allowing immediate etching. The 200-cycle film has likely crystallized into a denser phase (e.g., Anatase), which is thermodynamically more stable and resistant to chemical attack, requiring an incubation period to roughen the surface and create active sites before rapid etching can proceed.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies the process requires a robust endpoint detection method and likely an over-etch period. Since the etch start time is unpredictable based on thickness, one cannot rely on timed etching alone. The process must monitor for the end of the incubation/etch transition (e.g., via mass spectrometry or optical emission) and then continue for a controlled over-etch to ensure complete clearance across all thickness variations.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":548,"height":415},{"panel_id":"b","x":522,"y":2,"width":522,"height":408}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1047,"height":417,"image_format":"jpeg","image_sha256":"7e6d8e84e7eaedd45ddbf1f4e5a218e49e4efb48704cd166603ce7bea28d0168","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_15_fig4.jpg","caption":"FIG.4. t t 3. t 300 4. t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t a t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t h t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t s t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t u t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t e t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t o t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t c t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t b t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t n t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t w t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t f t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t i t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t y t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t r t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t d t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t m t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t g t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t 1 t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t","id":"train/atomic-layer-etching/simulation-usecase/15/fig4","sample_id":"atomic-layer-etching/simulation-usecase/15/fig4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"},{"panel_id":"e","label":"multiple line chart"},{"panel_id":"f","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line graph shows the density of Si and Cl atoms at different Z positions along the y-axis, indicating that after the first chlorination step Cl remains near the surface while Si dominates the bulk.\"},{\"panel_id\":\"b\",\"text\":\"The multiple line graph shows the density of Si and Cl atoms at different Z positions along the y-axis, indicating that after the first ion bombardment step the near-surface Si density decreases and the Cl profile becomes slightly redistributed.\"},{\"panel_id\":\"c\",\"text\":\"The multiple line graph shows the density of Si and Cl atoms at different Z positions along the y-axis, indicating that after the fourth chlorination step Cl penetration into the near-surface region increases while Si density near the surface is further reduced.\"},{\"panel_id\":\"d\",\"text\":\"The multiple line graph shows the density of Si and Cl atoms at different Z positions along the y-axis, indicating that after the fourth ion bombardment step Si is further sputtered from the surface and the Cl distribution becomes more diffuse.\"},{\"panel_id\":\"e\",\"text\":\"The multiple line graph shows the density of Si and Cl atoms at different Z positions along the y-axis, indicating that after the eighth chlorination step a pronounced Cl-rich surface layer forms with a corresponding depletion of Si near the interface.\"},{\"panel_id\":\"f\",\"text\":\"The multiple line graph shows the density of Si and Cl atoms at different Z positions along the y-axis, indicating that after the eighth ion bombardment step the surface Si density continues to decrease while the Cl profile is partially flattened due to repeated sputtering and mixing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Z Position (Å) | Si Density (atom/ų) | Cl Density (atom/ų) |\\n|----------------|----------------------|----------------------|\\n| 0  | 0.075 | 0.000 |\\n| 5  | 0.048 | 0.000 |\\n| 10 | 0.049 | 0.000 |\\n| 15 | 0.047 | 0.000 |\\n| 20 | 0.052 | 0.000 |\\n| 25 | 0.049 | 0.000 |\\n| 30 | 0.050 | 0.000 |\\n| 35 | 0.049 | 0.000 |\\n| 40 | 0.049 | 0.000 |\\n| 45 | 0.050 | 0.001 |\\n| 50 | 0.049 | 0.002 |\\n| 55 | 0.002 | 0.068 |\\n| 60 | 0.000 | 0.000 |\"},{\"panel_id\":\"b\",\"text\":\"| Z Position (Å) | Si Density (atom/ų) | Cl Density (atom/ų) |\\n|----------------|----------------------|----------------------|\\n| 0  | 0.070 | 0.000 |\\n| 5  | 0.048 | 0.000 |\\n| 10 | 0.050 | 0.000 |\\n| 15 | 0.049 | 0.000 |\\n| 20 | 0.052 | 0.000 |\\n| 25 | 0.050 | 0.000 |\\n| 30 | 0.050 | 0.000 |\\n| 35 | 0.052 | 0.001 |\\n| 40 | 0.050 | 0.002 |\\n| 45 | 0.048 | 0.003 |\\n| 50 | 0.038 | 0.005 |\\n| 55 | 0.012 | 0.005 |\\n| 60 | 0.000 | 0.000 |\"},{\"panel_id\":\"c\",\"text\":\"| Z Position (Å) | Si Density (atom/ų) | Cl Density (atom/ų) |\\n|----------------|----------------------|----------------------|\\n| 0  | 0.075 | 0.000 |\\n| 5  | 0.046 | 0.000 |\\n| 10 | 0.048 | 0.000 |\\n| 15 | 0.049 | 0.000 |\\n| 20 | 0.051 | 0.000 |\\n| 25 | 0.050 | 0.000 |\\n| 30 | 0.052 | 0.002 |\\n| 35 | 0.048 | 0.004 |\\n| 40 | 0.050 | 0.003 |\\n| 45 | 0.042 | 0.004 |\\n| 50 | 0.035 | 0.015 |\\n| 55 | 0.008 | 0.008 |\\n| 60 | 0.000 | 0.000 |\"},{\"panel_id\":\"d\",\"text\":\"| Z Position (Å) | Si Density (atom/ų) | Cl Density (atom/ų) |\\n|----------------|----------------------|----------------------|\\n| 0  | 0.075 | 0.000 |\\n| 5  | 0.045 | 0.000 |\\n| 10 | 0.049 | 0.000 |\\n| 15 | 0.048 | 0.000 |\\n| 20 | 0.051 | 0.000 |\\n| 25 | 0.050 | 0.000 |\\n| 30 | 0.050 | 0.001 |\\n| 35 | 0.051 | 0.003 |\\n| 40 | 0.052 | 0.004 |\\n| 45 | 0.050 | 0.003 |\\n| 50 | 0.042 | 0.003 |\\n| 55 | 0.010 | 0.003 |\\n| 60 | 0.000 | 0.000 |\"},{\"panel_id\":\"e\",\"text\":\"| Z Position (Å) | Si Density (atom/ų) | Cl Density (atom/ų) |\\n|----------------|----------------------|----------------------|\\n| 0  | 0.072 | 0.000 |\\n| 5  | 0.048 | 0.000 |\\n| 10 | 0.046 | 0.000 |\\n| 15 | 0.048 | 0.000 |\\n| 20 | 0.050 | 0.000 |\\n| 25 | 0.051 | 0.000 |\\n| 30 | 0.050 | 0.001 |\\n| 35 | 0.050 | 0.003 |\\n| 40 | 0.052 | 0.002 |\\n| 45 | 0.045 | 0.004 |\\n| 50 | 0.038 | 0.009 |\\n| 55 | 0.010 | 0.015 |\\n| 60 | 0.000 | 0.000 |\"},{\"panel_id\":\"f\",\"text\":\"| Z Position (Å) | Si Density (atom/ų) | Cl Density (atom/ų) |\\n|----------------|----------------------|----------------------|\\n| 0  | 0.073 | 0.000 |\\n| 5  | 0.047 | 0.000 |\\n| 10 | 0.049 | 0.000 |\\n| 15 | 0.048 | 0.000 |\\n| 20 | 0.050 | 0.000 |\\n| 25 | 0.051 | 0.000 |\\n| 30 | 0.049 | 0.001 |\\n| 35 | 0.048 | 0.004 |\\n| 40 | 0.051 | 0.003 |\\n| 45 | 0.046 | 0.004 |\\n| 50 | 0.040 | 0.006 |\\n| 55 | 0.009 | 0.005 |\\n| 60 | 0.000 | 0.000 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies a Steady-State Regime. Since the thickness of the damaged/mixed layer stops growing and remains constant from Cycle 4 to Cycle 8, the process has stabilized. This means the Etch Rate per Cycle (EPC) is now constant and predictable, which is the ideal operating condition for manufacturing precision devices.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Amorphization (or Lattice Damage). The vertical drop in (a) represents an atomically sharp, ordered crystal. The gradual slope in (f) indicates that the repeated ion bombardment has disordered the lattice, creating a region of low-density amorphous silicon and mixing it with the surface, rather than maintaining a perfect crystal termination.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It represents the Total Etch Depth (or material removed). The receding boundary shows that the cyclic ALE process is successfully removing silicon layer-by-layer, resulting in a 10 \\\\AA trench depth after 8 cycles.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Contamination / Defect Generation. The tail shows that Chlorine is trapped inside the silicon lattice, not just on top. If a new layer is grown on this surface, the trapped Chlorine acts as a contaminant. It can diffuse out, causing corrosion, void formation, or electrical defects that ruin the crystal quality of the subsequent epitaxial growth.\"}]}]","bbox":[{"panel_id":"a","x":22,"y":8,"width":409,"height":370},{"panel_id":"b","x":468,"y":8,"width":410,"height":370},{"panel_id":"c","x":931,"y":8,"width":408,"height":370},{"panel_id":"d","x":22,"y":389,"width":409,"height":367},{"panel_id":"e","x":469,"y":389,"width":408,"height":367},{"panel_id":"f","x":929,"y":389,"width":418,"height":367}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1347,"height":756,"image_format":"jpeg","image_sha256":"22c8441ecb4cb5b943ce8770507896f95fc80e80502568f1c917b076c9e5e309","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_15_fig_9.jpg","caption":"FIG. 9. Si and Cl number density profiles at the beginning of $\\mathsf{Ar}^+$ ion bombardment step [panel (a)] and after $150\\mathrm{Ar}^+$ ion impacts [panel (b)]. The black dotted line corresponds to the density of Si at $300\\mathrm{K}$ (Ref. 43). The cycle in this case corresponds to $2255\\mathrm{Cl}_2$ molecule impacts and $1000\\mathrm{Ar}^+$ ion impacts.","id":"train/atomic-layer-etching/simulation-usecase/15/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/15/fig_9","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure displays the depth profiles (density vs. Z-position) of Silicon (blue) and Chlorine (red) during an ALE cycle. Panel (a) shows the state immediately after chlorination but before ion bombardment, where a significant chlorine-rich layer exists at the surface (high Z).\"},{\"panel_id\":\"b\",\"text\":\"The label shows the state after 150 Argon ion impacts, revealing how the ion bombardment has begun to remove the surface material and push some chlorine deeper into the silicon lattice.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Z Position (Å) | Si Density (atom/ų) | Cl Density (atom/ų) |\\n|----------------|----------------------|----------------------|\\n| 0 | 0.060 | 0.000 |\\n| 5 | 0.047 | 0.000 |\\n| 10 | 0.048 | 0.000 |\\n| 15 | 0.048 | 0.000 |\\n| 20 | 0.049 | 0.000 |\\n| 25 | 0.050 | 0.000 |\\n| 30 | 0.053 | 0.000 |\\n| 35 | 0.045 | 0.005 |\\n| 40 | 0.051 | 0.002 |\\n| 45 | 0.048 | 0.002 |\\n| 50 | 0.038 | 0.009 |\\n| 55 | 0.005 | 0.012 |\\n| 60 | 0.000 | 0.000 |\"},{\"panel_id\":\"b\",\"text\":\"| Z Position (Å) | Si Density (atom/ų) | Cl Density (atom/ų) |\\n|----------------|----------------------|----------------------|\\n| 0 | 0.070 | 0.000 |\\n| 5 | 0.046 | 0.000 |\\n| 10 | 0.050 | 0.000 |\\n| 15 | 0.049 | 0.000 |\\n| 20 | 0.051 | 0.000 |\\n| 25 | 0.052 | 0.000 |\\n| 30 | 0.050 | 0.001 |\\n| 35 | 0.048 | 0.003 |\\n| 40 | 0.051 | 0.003 |\\n| 45 | 0.044 | 0.005 |\\n| 50 | 0.038 | 0.008 |\\n| 55 | 0.008 | 0.010 |\\n| 60 | 0.000 | 0.000 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Residue vs. Damage. Stopping at 150 impacts leaves a high concentration of residual chlorine (red line is still prominent), which could contaminate the next layer. However, continuing to 1000 impacts ensures a cleaner surface but risks deeper ion damage to the underlying silicon crystal structure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This is caused by Knock-on Implantation or Mixing. The energetic Ar+ ions transfer momentum to the surface chlorine atoms, driving some of them deeper into the silicon lattice rather than just sputtering them off. This creates a mixed, amorphous Si-Cl sub-surface layer.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Increased Roughness. The gradual density transition indicates that the surface is not atomically flat but rather rough or intermixed, which can degrade carrier mobility in the final semiconductor device.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Physical Sputtering / Ion Bombardment. The 150 Ar^+ ion impacts have physically sputtered away the top-most layer of chlorinated silicon, reducing the total amount of chlorine and receding the surface (Z position decreases).\"}]}]","bbox":[{"panel_id":"b","x":686,"y":21,"width":652,"height":540},{"panel_id":"a","x":3,"y":26,"width":675,"height":541}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1342,"height":570,"image_format":"jpeg","image_sha256":"cd3d8f7dd46179c4a88b064813ed8928fdf19a17f7d27a51a5b6cd6f1ffc331b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_6.jpg","caption":"Fig. 6. Line plots illustrating the effects of the gap distance on precursor separation, of which operating condition is (a) Case 1, (b) Case 2, (c) Case 3, and (d) Case 4 as described in Table 3. The shaded area indicates the precursor intermixing zone.","id":"train/atomic-layer-etching/simulation-usecase/16/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the mole fraction of HF and TMA at different positions along the x-axis.\"},{\"panel_id\":\"b\",\"text\":\"The line chart displays the mole fraction of HF and TMA with sharp transitions at specific positions related to the tool geometry.\"},{\"panel_id\":\"c\",\"text\":\"The line chart shows the mole fraction of HF and TMA with sharp transitions at specific positions related to the tool geometry.\"},{\"panel_id\":\"d\",\"text\":\"The line chart illustrates the mole fraction of HF and TMA with sharp transitions at specific positions related to the tool geometry.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0.2 |0.12|\\n|-50 | 0.21 |0.13|\\n|0 | 0.15 |0.18|\\n|50 | 0.13 |0.26|\\n|100 | 0.11 |0.25|\"},{\"panel_id\":\"b\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0 |0|\\n|-50 | 0.67 |0|\\n|0 | 0 |0|\\n|50 | 0 |0.55|\\n|100 | 0 |0|\"},{\"panel_id\":\"c\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0 |0|\\n|-50 | 0.67 |0|\\n|0 | 0 |0|\\n|50 | 0 |0.55|\\n|100 | 0 |0|\"},{\"panel_id\":\"d\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0 |0|\\n|-50 | 0.67 |0|\\n|0 | 0 |0|\\n|50 | 0 |0.55|\\n|100 | 0 |0|\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The width of the slits is equal to the width of the plateau, which is about 30 mm.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Part of the gases penetrates into the gas shield regions, which is why there is no precise cut-off.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No there will not be ALE, as TMA and HF already mix in the gas phase. This can result in continuous etching.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Low gap sizes usually mean that lower flows of precursor are required so there will be less gas consumption.\"}]}]","bbox":[{"panel_id":"c","x":3,"y":507,"width":572,"height":479},{"panel_id":"b","x":607,"y":4,"width":565,"height":483},{"panel_id":"a","x":6,"y":2,"width":562,"height":469},{"panel_id":"d","x":596,"y":507,"width":574,"height":477}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1175,"height":989,"image_format":"jpeg","image_sha256":"eaaf880d1caa39e77c462eddae077ad8ca95c74fbd6a5447e774347a1eee04fa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_7.jpg","caption":"Fig. 7. Line plots illustrating the effects of the $\\mathbb{N}_2$ flow rate on precursor separation, of which operating condition is (a) Case 1, (b) Case 5, (c) Case 6, and (d) Case 7 as described in Table 3. The shaded area indicates the precursor intermixing zone.","id":"train/atomic-layer-etching/simulation-usecase/16/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_7","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the mole fraction of HF and TMA at different positions along the x-axis. Where the blue area depicts gas mixing.\"},{\"panel_id\":\"b\",\"text\":\"The line chart shows the mole fraction of HF and TMA at different positions along the x-axis. Where the blue area depicts gas mixing.\"},{\"panel_id\":\"c\",\"text\":\"The line chart shows the mole fraction of HF and TMA at different positions along the x-axis. Where the blue area depicts gas mixing.\"},{\"panel_id\":\"d\",\"text\":\"The line chart shows the mole fraction of HF and TMA at different positions along the x-axis. Where the blue area depicts gas mixing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0.2 |0.12|\\n|-50 | 0.21 |0.13|\\n|0 | 0.15 |0.18|\\n|50 | 0.13 |0.26|\\n|100 | 0.11 |0.25|\"},{\"panel_id\":\"b\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0.09 |0.03|\\n|-50 | 0.11 |0.04|\\n|0 | 0.05 |0.06|\\n|50 | 0.03 |0.12|\\n|100 | 0.03 |0.11|\"},{\"panel_id\":\"c\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0.05 |0.01|\\n|-50 | 0.08 |0.01|\\n|0 | 0.03|0.03|\\n|50 | 0.02 |0.08|\\n|100 | 0.01 |0.06|\"},{\"panel_id\":\"d\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0.02 |0.00|\\n|-50 | 0.05 |0.00|\\n|0 | 0.02|0.02|\\n|50 | 0.01 |0.05|\\n|100 | 0.00 |0.02|\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes this could be a problem, in that case the flows of reactants should also increase.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TMA slit is located on the right side as there the TMA signal is the highest.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The gas mixing will result in continuous etching, which is detrimental to ALE.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes there is.\"}]}]","bbox":[{"panel_id":"c","x":4,"y":511,"width":568,"height":479},{"panel_id":"b","x":608,"y":0,"width":570,"height":487},{"panel_id":"a","x":8,"y":1,"width":564,"height":476},{"panel_id":"d","x":604,"y":511,"width":573,"height":477}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1183,"height":992,"image_format":"jpeg","image_sha256":"5f2d58bd9ff82735d591ed68d62df8c6bfe038b7ff2030104038dab63d8fa42c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_8.jpg","caption":"Fig. 8. Line plots illustrating the effects of the precursor flow rate on precursor separation, of which operating condition is (a) Case 1, (b) Case 8, (c) Case 9, and (d) Case 10 as described in Table 3. The shaded area indicates the precursor intermixing zone.","id":"train/atomic-layer-etching/simulation-usecase/16/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_8","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the mole fraction of HF and TMA at various positions along the x-axis, where the mixing of HF and TMA is shown blue.\"},{\"panel_id\":\"b\",\"text\":\"The line chart displays the mole fraction of HF and TMA at different positions, where the mixing of HF and TMA is shown blue.\"},{\"panel_id\":\"c\",\"text\":\"The line chart illustrates the mole fraction of HF and TMA at varying positions, where the mixing of HF and TMA is shown blue.\"},{\"panel_id\":\"d\",\"text\":\"The line chart depicts the mole fraction of HF and TMA at different positions, where the mixing of HF and TMA is shown blue.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0.2 |0.12|\\n|-50 | 0.21 |0.13|\\n|0 | 0.15 |0.18|\\n|50 | 0.13 |0.26|\\n|100 | 0.11 |0.25|\"},{\"panel_id\":\"b\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0.27 |0.14|\\n|-50 | 0.29 |0.16|\\n|0 | 0.19 |0.22|\\n|50 | 0.12 |0.31|\\n|100 | 0.11 |0.30|\"},{\"panel_id\":\"c\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0.33 |0.13|\\n|-50 | 0.35 |0.14|\\n|0 | 0.2 |0.22|\\n|50 | 0.11 |0.4|\\n|100 | 0.11 |0.38|\"},{\"panel_id\":\"d\",\"text\":\"| Position (mm) | Mole Fraction HF |Mole Fraction TMA |\\n|---|---|---|\\n|-100 | 0.4 |0.11|\\n|-50 | 0.42 |0.12|\\n|0 | 0.25 |0.26|\\n|50 | 0.08 |0.43|\\n|100 | 0.08 |0.43|\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The flow of nitrogen in the gas shield can be greatly increased.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is likely that there will be continuous etching, even though the mole fractions of TMA and HF in their designated locations are way larger.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TMA has a higher mole fraction in the HF region as compared to HF in the TMA region. So TMA diffuses more into the other region.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.21\"}]}]","bbox":[{"panel_id":"c","x":5,"y":516,"width":558,"height":472},{"panel_id":"b","x":604,"y":1,"width":577,"height":489},{"panel_id":"a","x":5,"y":1,"width":572,"height":475},{"panel_id":"d","x":599,"y":518,"width":577,"height":470}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1183,"height":992,"image_format":"jpeg","image_sha256":"3316f48079e0f1a72eef219e27cc42f153a17413c0527c9ba4491ae86cffd577","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_10.jpg","caption":"FIG. 10. Fluxes to the wafer as a function of radius for the $\\mathrm{Ar / c - C_4F_8}$ CCP. (a) Neutral and (b) ion fluxes. $\\mathrm{CF}_3$ , $\\mathrm{C}_3\\mathrm{F}_5$ , and $\\mathrm{F}$ are the dominant radicals. $\\mathrm{Ar^{+}}$ , $\\mathrm{C}_2\\mathrm{F}_4^+$ , and $\\mathrm{CF}_x^+$ $(x = 1 - 3)$ are the dominant ions.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_10","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the neutral flux of various species as a function of radius of the wafer.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays the ion flux of ions as a function of radius of the wafer.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Species | Radius (cm) | Neutral Flux ($10^{17}$ cm$^{-2}$s$^{-1}$) | \\n|---|---|---|\\n|CF3 | 0 | 5.82 | \\n|CF3 | 4 | 5.82 | \\n|CF3 | 10 | 5.88| \\n|CF2 | 0 | 4.57 | \\n|CF2 | 4 | 4.59 | \\n|CF2 | 10 | 4.61| \\n|CF | 0 | 4.3 |\\n|CF | 4 | 4.26 |\\n|CF | 10 | 4.28 |\\n|C2F6 | 0 | 2.66 |\\n|C2F6 | 4 | 2.68 |\\n|C2F6 | 10 | 2.74 |\\n|C3F5 | 0 | 1.77 |\\n|C3F5 | 4 | 1.75 |\\n|C3F5 | 10 |1.77 |\\n|C4F7 | 0 | 1.46 |\\n|C4F7 | 4 | 1.46|\\n|C4F7 | 10 | 1.46 |\\n|C2F4 | 0 | 0.91 |\\n|C2F4 | 4 | 0.89 |\\n|C2F4 | 10 | 0.91 |\\n|CF4 | 0 | 0.78 |\\n|CF4 | 4 | 0.68|\\n|CF4 | 10 | 0.48 |\\n|F | 0 |0.68 |\\n|F | 4 | 0.68 |\\n|F | 10 | 0.72 |\"},{\"panel_id\":\"b\",\"text\":\"| Species | Radius (cm) | Ion Flux ($10^{15}$ cm$^{-2}$s$^{-1}$) |\\n|---|---|---|\\n| Ar+ | 0 | 12.9 | \\n| Ar+ | 4 | 16.7 | \\n| Ar+ | 10 | 18.2 | \\n|C2F4+ | 0 | 8.5 | \\n|C2F4+ | 4 | 10.1 | \\n|C2F4+ | 10 | 9.7 | \\n|C3F5+ | 0 | 4.9 | \\n|C3F5+ | 4 | 6.7 | \\n|C3F5+ | 10 | 6.6 | \\n|CF+ + CF2+ + CF3+ | 0 | 3.8 |\\n|CF+ + CF2+ + CF3+ | 4 | 5.6 |\\n|CF+ + CF2+ + CF3+ | 10 | 5.4 |\\n|Ar+ (Step 2) | 0 | 2.3 | \\n|Ar+ (Step 2) | 4 | 2.2 | \\n|Ar+ (Step 2) | 10 | 2.2 | \\n|F + | 0 | 0.5 |\\n|F + | 4 | 0.45 |\\n|F + | 10 | 0.39 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The argon ion is the primary species responsible for the non-uniformity observed near the edge of the wafer. The fluxes of other ions remain relatively flat across the radius. The argon ion flux exhibits a distinct rise from the center to the edge of the wafer.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"CF3.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At ~ 5 cm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"CF4, C2F6 and C2F4.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":376,"height":376},{"panel_id":"b","x":1,"y":383,"width":377,"height":372}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":378,"height":756,"image_format":"jpeg","image_sha256":"d8be253135218ca1582aa9a36813b4ea8219a067fa7c597b496edbc24f813d07","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_16.jpg","caption":"FiG. 16. Fluxes to the wafer as a function of radius for the nonsinusoidal bias PALE process. (a) Neutral and (b) ion fluxes. $\\mathrm{CF}_2$ CF,and $\\mathrm{CF}_3$ are the dominant fluorine containing neutral radicals. $\\mathrm{Ar^{+}}$ $\\mathrm{CF}_3^+$ $\\mathrm{CF}_2^+$ and $\\mathrm{CF^{+}}$ are the dominant ion fluxes.","id":"train/atomic-layer-etching/simulation-usecase/19/fig_16","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_16","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the neutral flux of various species as a function of wafer radius (0 - 6 cm).The flux is dominated by CF3 radical.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the ion flux of various species as a function of of wafer radius (0 - 6 cm). The flux is dominated by Ar(+).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Radius (cm) | CF2 flux (10¹⁷ cm⁻² s⁻¹) | CF flux (10¹⁷ cm⁻² s⁻¹) | C flux (10¹⁷ cm⁻² s⁻¹) | CF3 (×2) flux (10¹⁷ cm⁻² s⁻¹) | C2F3 (×2) flux (10¹⁷ cm⁻² s⁻¹) | F (×2) flux (10¹⁷ cm⁻² s⁻¹) | C2F4 (×2) flux (10¹⁷ cm⁻² s⁻¹) | C2F5 (×2) flux (10¹⁷ cm⁻² s⁻¹) |\\n|---|---|---|---|---|---|---|---|---|\\n| 0 | 5.75 | 3.75 | 2.82 | 1.65 | 1.25 | 0.9 | 0.45 | 0.3 |\\n| 3 | 5.64 | 3.79 | 2.68 | 1.61 | 1.34 | 0.82 | 0.51 | 0.32 |\\n| 6| 5.79 | 4.12 | 2.53 | 1.54 | 1.75 | 0.63 | 0.63 | 0.33 |\"},{\"panel_id\":\"b\",\"text\":\"| Radius (cm) | Ar+ flux (10¹⁵ cm⁻² s⁻¹) | CF3+ flux (10¹⁵ cm⁻² s⁻¹) | CF2+ flux (10¹⁵ cm⁻² s⁻¹) | CF+ flux (10¹⁵ cm⁻² s⁻¹) | C2F4+ flux (10¹⁵ cm⁻² s⁻¹) | C2F5+ + C3F5+ flux (10¹⁵ cm⁻² s⁻¹) | F+ flux (10¹⁵ cm⁻² s⁻¹) |\\n|---|---|---|---|---|---|---|---|\\n| 0 | 7 | 3.5 | 2.6 | 2.4 | 0.52 | 0.52 | 0.12 |\\n| 3 | 6 | 2.9 | 2.3 | 2.14 | 0.52 | 0.52 | 0.07 |\\n| 6 | 4.6 | 2.6 | 1.75 | 1.75 | 0.52 | 0.52 | 0.07 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ar(+).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"C2F5(+) + C3F5(+), C2F4(+), CF(+), CF2(+), CF3(+), Ar(+)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At the center of the wafer (r = 0 cm).Since physical sputtering is driven by the bombardment of ions, the region receiving the highest flux of heavy Argon ions will experience the most intense sputtering. The Ar(+) flux shows its peak at the center of the wafer and decreases towards the edge.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"CF2, CF, C, C2F3, CF3, F, C2F4, C2F5\"}]}]","bbox":[{"panel_id":"a","x":5,"y":0,"width":371,"height":377},{"panel_id":"b","x":0,"y":392,"width":377,"height":365}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_16.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":378,"height":759,"image_format":"jpeg","image_sha256":"0e042de76bb3458cb08db49cafae86276ebac58708df0b8d16fcf0b308c644e6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_19_fig_3.jpg","caption":"FIG. 3. (Color online) Ion properties for the PALE cycle. (a) Ion fluxes to the wafer as a function of radius. $\\mathrm{Cl}^+$ is the major ion during step 1 (passivation) due to dissociation of the $\\mathrm{Cl}_2$ feedstock. The $\\mathrm{Ar^{+}}$ flux is higher during step 2 (etching) step due to lack of any competing processes. (b) Total IEDs averaged over the wafer. Low ion energies are necessary to minimize etching during step 1 while higher ion energies in step 2 enable etching of the $\\mathrm{SiCl}_x$ passivation. (IEADs are plotted using a log scale over 2 decades.)","id":"train/atomic-layer-etching/simulation-usecase/19/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/19/fig_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"contour heatmap"},{"panel_id":"c","label":"contour heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the ion flux of different ions (Ar+, Cl+, and Cl2+) for step 1 (passivation) and step 2(etching) at various radii from the center of the wafer.\"},{\"panel_id\":\"b\",\"text\":\"The heatmap displays the ion energy and angular distribution (IEAD) for step 1 (passivation).\"},{\"panel_id\":\"c\",\"text\":\"The heatmap displays the ion energy and angular distribution (IEAD) for step 2 (etching).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Radius (cm) | Ion Flux (1016 cm-2s-1) | Species|\\n|---|---|---|\\n| 0 | 7.93 | Ar (+) Step 2|\\n| 3 | 7.27 | Ar (+) Step 2|\\n| 6 | 5.18 | Ar (+) Step 2|\\n| 0 | 1.35 | Ar (+) Step 1|\\n| 3 | 1.2 | Ar (+) Step 1|\\n| 6 | 0.7 | Ar (+) Step 1|\\n| 0 | 3.6 | Cl (+) Step 1|\\n| 3 | 3.1 | Cl (+) Step 1|\\n| 6 | 1.89 | Cl (+) Step 1|\\n| 0 | 0.5 | Cl2(+) Step 1|\\n| 3 | 0.5 | Cl2(+) Step 1|\\n| 6 | 0.5 | Cl2(+) Step 1|\"},{\"panel_id\":\"b\",\"text\":\"| Angle (deg) | Energy (eV) | Intensity |\\n|---|---|---|\\n| -15 | 14 | 0.01 |\\n| 0 | 14 | 0.01 |\\n| 15 | 14 | 0.01 |\\n| -15 | 16 | 0.69|\\n| 0 | 16 | 0.69 |\\n| 15 | 16 | 0.36 |\\n| -15 | 17 | 0.69 |\\n| 0 | 17 | 1 |\\n| 15 | 17 | 0.36 |\\n| -15 | 21 | 0.01 |\\n| 0 | 21 | 0.01 |\\n| 15 | 21 | 0.01 |\"},{\"panel_id\":\"c\",\"text\":\"| Angle (deg) | Energy (eV) | Intensity |\\n|---|---|---|\\n| 0 | 42 | 0.01 |\\n| 0 | 51 | 0.85 |\\n| -9 | 51 | 0.01 |\\n| 9 | 51 | 0.01|\\n| 0 | 57 | 1 |\\n| 9 | 57 | 0.01 |\\n| -9 | 57 | 0.01 |\\n| 0 | 61 | 0.01 |\\n| 9 | 17 | 0.01 |\\n| -9 | 21 | 0.01 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cl (+).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cl2 (+).\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Perpendicular to the wafer surface (0 degrees).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ ± 10 degrees.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":368,"height":364},{"panel_id":"b","x":8,"y":372,"width":201,"height":442},{"panel_id":"c","x":202,"y":370,"width":170,"height":437}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/19/Plasma atomic layer etching using conventional plasma equipment.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":375,"height":808,"image_format":"jpeg","image_sha256":"60b54ffaf3f0daa8efa070f8c2f4d6ec47a3d6ab6f9bb6d9ff4d9166fa13c555","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_3.jpg","caption":"Figure 3. Various contributions to the reaction FEP for the CVE1 reaction of $\\mathrm{TiO}_2 + \\mathrm{HF}\\rightarrow \\mathrm{TiF}_4 + \\mathrm{H}_2\\mathrm{O}$ at an HF reactant pressure of 0.2 Torr.","id":"train/atomic-layer-etching/simulation-usecase/20/figure_3","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure plots the thermodynamic contributions to the reaction free energy profile (FEP) for the etching reaction TiO₂(bulk) + 4HF(g) → TiF₄(g) + 2H₂O(g) as a function of temperature (0–800 K) at a constant HF pressure of 0.2 Torr. It shows how the electronic energy (ΔE), zero-point correction (ΔE+ΔZPE), Gibbs free energy (ΔG), and entropic term (TΔS) evolve with temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature [K] | E [eV / TiO2] | |\\n|---|---|----|\\n| 0 | -1.4 | ΔE |\\n| 0 | -1.2 | ΔE + ΔZPE |\\n| 0 | -1.2 | ΔG |\\n| 0 | 0.0 | TΔS |\\n| 0 | 0.0 | ΔW |\\n| 0 | 0.0 | RT ln(Q) |\\n| 200 | -1.4 | ΔE |\\n| 200 | -1.2 | ΔE + ΔZPE |\\n| 200 | -1.2 | ΔG |\\n| 200 | -0.1 | TΔS |\\n| 200 | -0.03 | ΔW |\\n| 200 | -0.01 | RT ln(Q) |\\n| 400 | -1.4 | ΔE |\\n| 400 | -1.2 | ΔE + ΔZPE |\\n| 400 | -1.1 | ΔG |\\n| 400 | -0.2 | TΔS |\\n| 400 | -0.1 | ΔW |\\n| 400 | -0.02 | RT ln(Q) |\\n| 600 | -1.4 | ΔE |\\n| 600 | -1.2 | ΔE + ΔZPE |\\n| 600 | -1.0 | ΔG |\\n| 600 | -0.4 | TΔS |\\n| 600 | -0.1 | ΔW |\\n| 600 | -0.04 | RT ln(Q) |\\n| 800 | -1.4 | ΔE |\\n| 800 | -1.2 | ΔE + ΔZPE |\\n| 800 | -0.8 | ΔG |\\n| 800 | -0.6 | TΔS |\\n| 800 | -0.1 | ΔW |\\n| 800 | -0.1 | RT ln(Q) |\\n| 1000 | -1.4 | ΔE |\\n| 1000 | -1.2 | ΔE + ΔZPE |\\n| 1000 | -0.7 | ΔG |\\n| 1000 | -0.7 | TΔS |\\n| 1000 | -0.2 | ΔW |\\n| 1000 | -0.1 | RT ln(Q) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes, it is spontaneous. At 300 K, the Gibbs free energy (ΔG) is approximately −1.2 eV, and a negative ΔG indicates a spontaneous reaction.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"700 K is better for ensuring spontaneity (more negative ΔG). The trade-off is the higher thermal budget, which may damage temperature-sensitive materials or increase energy costs, whereas 400 K offers lower thermal stress but may result in a non-spontaneous or slower etch rate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ΔG becomes more negative (more spontaneous) as temperature increases. This is primarily driven by the large, positive TΔS term (entropy gain) due to the production of gas-phase molecules (TiF₄ and H₂O) from a solid and gas, which outweighs the endothermic enthalpy contribution at higher temperatures.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies that HF gas etching of TiO₂ is not feasible at room temperature (ΔG > 0). To enable etching, the process must be heated above ~500 K, or an alternative, more reactive chemistry (e.g., plasma activation) must be used to lower the kinetic barrier and drive the reaction at lower temperatures.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":539,"height":498}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":544,"height":502,"image_format":"jpeg","image_sha256":"66f7456d5ca0d56dc4ddcfd2ac98b1ca36080a79c49c87506e0b7b2843dd73a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_4.jpg","caption":"Figure 4. FEPs for the CVE1, CVE2, CVE3, SL1 SL2, and SL3 reactions for HF interacting with $\\mathrm{TiO_2}$ versus temperature. The labels X and Y correspond to the values listed in Table 1.","id":"train/atomic-layer-etching/simulation-usecase/20/figure_4","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This multiple line chart image compares the free energy profiles (FEPs) of three Continuous Vapor Etching (CVE) reactions (red, red-dashed, blue) with their corresponding self-limiting (SL) surface modification reactions (green, green-dashed, yellow). For ideal Atomic Layer Etching (ALE), the SL reaction must be spontaneous (ΔG < 0) while the CVE reaction remains non-spontaneous (ΔG > 0), defining a “Goldilocks” window where the surface is modified but bulk etching is suppressed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature [K] | ΔG [ev / TiO2] | Materials |\\n|--------|---------|---------|\\n| 0 | -1.2 | CVE1(Y1) |\\n| 0 | 2.1 | CVE2(Y2) |\\n| 0 | 2.2 | CVE3(Y3) |\\n| 0 | -2.2 | SL1(X1) |\\n| 0 | -1.1 | SL2(X2) |\\n| 0 | -0.1 | SL3(X3) |\\n| 200 | -1.2 | CVE1(Y1) |\\n| 200 | 1.7 | CVE2(Y2) |\\n| 200 | 1.9 | CVE3(Y3) |\\n| 200 | -1.6 | SL1(X1) |\\n| 200 | -0.8 | SL2(X2) |\\n| 200 | 0.2 | SL3(X3) |\\n| 400 | -1.1 | CVE1(Y1) |\\n| 400 | 1.4 | CVE2(Y2) |\\n| 400 | 1.7 | CVE3(Y3) |\\n| 400 | -0.9 | SL1(X1) |\\n| 400 | -0.5 | SL2(X2) |\\n| 400 | 0.6 | SL3(X3) |\\n| 600 | -1.0 | CVE1(Y1) |\\n| 600 | 1.1 | CVE2(Y2) |\\n| 600 | 1.4 | CVE3(Y3) |\\n| 600 | -0.3 | SL1(X1) |\\n| 600 | -0.2 | SL2(X2) |\\n| 600 | 1.0 | SL3(X3) |\\n| 800 | -0.8 | CVE1(Y1) |\\n| 800 | 0.9 | CVE2(Y2) |\\n| 800 | 1.2 | CVE3(Y3) |\\n| 800 | 0.3 | SL1(X1) |\\n| 800 | 0.1 | SL2(X2) |\\n| 800 | 1.3 | SL3(X3) |\\n| 1000 | -0.7 | CVE1(Y1) |\\n| 1000 | 0.6 | CVE2(Y2) |\\n| 1000 | 1.0 | CVE3(Y3) |\\n| 1000 | 0.9 | SL1(X1) |\\n| 1000 | 0.4 | SL2(X2) |\\n| 1000 | 1.6 | SL3(X3) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"CVE1: 4 HF molecules.\\n\\nCVE2: 2 HF molecules.\\n\\nCVE3: 3 HF molecules.\\n\\nConclusion: CVE1 consumes the most reactant (4 HF).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The CVE2 pathway is not viable for a spontaneous, continuous etch. Its ΔG remains positive (non-spontaneous) across the entire temperature range shown, unlike CVE1 which becomes favorable above ~700 K. To achieve continuous etching, one must use conditions that favor CVE1, accepting a higher thermal budget.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A CVE pathway produces volatile gas-phase products (e.g., TiF₄(g)), leading to complete material removal. An SL pathway produces a modified, non-volatile surface layer (e.g., TiF₄(surf)). The SL reactions are always more exothermic (more negative ΔE) than their CVE counterparts because forming a surface layer is energetically cheaper than completely breaking bonds to release gas molecules.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies that isotropic, continuous etching of TiO₂ with HF gas requires a high-temperature process (>700K). At lower temperatures, the reaction will self-limit, only modifying the surface. Therefore, for patterning, one must either operate at high temperature or use an alternative activation method (like plasma) to drive the CVE pathway at lower temperatures.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":3,"width":556,"height":501}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":563,"height":505,"image_format":"jpeg","image_sha256":"bcfcfc8bca6256ccdac3e9f91a0ae8069bab603525b3643e46503284c1dfdec4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_5.jpg","caption":"Figure 5. FEPs of CVE1 and SL1 showing three regions: preferred self-limiting, preferred etching, and purely etching. SL1 and CVE1 line crossing occurs at $360~\\mathrm{K}$ $(87^{\\circ}\\mathrm{C})$","id":"train/atomic-layer-etching/simulation-usecase/20/figure_5","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_5","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure plots the Free Energy Profiles (FEPs) for the CVE1 (continuous vapor etch) and SL1 (self-limiting surface reaction) pathways for HF interacting with TiO₂. The lines cross at 360 K, defining three regimes: below 360 K, SL1 is favored (self-limiting); between 360 K and ~700 K, CVE1 becomes progressively more favored (preferred etching); above 700 K, CVE1 is strongly favored (purely etching).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature [K] | ΔG [eV / TiO2] | Label | Region |\\n|-----------------|---------------------------|----------|-----------------------|\\n| 0 | -2.2 | SL1(X1) | Preferred self-limiting |\\n| 0 | -1.1 | CVE1(Y2) | Preferred self-limiting |\\n| 200 | -1.5 | SL1(X1) | Preferred self-limiting |\\n| 200 | -1.1 | CVE1(Y2) | Preferred self-limiting |\\n| 400 | -0.9 | SL1(X1) | Preferred etching |\\n| 400 | -1.0 | CVE1(Y2) | Preferred etching |\\n| 600 | -0.3 | SL1(X1) | Preferred etching |\\n| 600 | -0.9 | CVE1(Y2) | Preferred etching |\\n| 800 | 0.2 | SL1(X1) | Purely etching |\\n| 800 | -0.8 | CVE1(Y2) | Purely etching |\\n| 1000 | 0.8 | SL1(X1) | Purely etching |\\n| 1000 | -0.7 | CVE1(Y2) | Purely etching |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Max Temperature: 360 K (87°C).Above 360 K, the preference switches; the bulk etching reaction (CVE1) becomes more energetically favorable than the surface modification (SL1).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"300 K (Self-limiting regime): Pro: Excellent depth control, atomic-layer precision. Con: Very slow or negligible material removal rate.\\n800 K (Purely etching regime): Pro: High etch rate, fast throughput. Con: Poor depth control, isotropic etching.\\nTrade-off: The choice is between controllability (low temp) and throughput (high temp). For precise patterning, a low-temperature, self-limiting process is necessary, sacrificing speed.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The shift is driven by entropy. The CVE1 pathway produces more gas molecules, granting it a larger, favorable entropy term (+TΔS). As temperature rises, this term dominates the free energy (ΔG = ΔH - TΔS), making the complete volatilization reaction (CVE1) increasingly favorable over the surface passivation reaction (SL1).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, it should be operated below 360 K. The SL1 pathway is thermodynamically favored over CVE1. This makes the reaction inherently self-limiting, as it preferentially forms a stable surface layer rather than volatile products, ensuring precise, layer-by-layer removal essential for controlled etching.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":555,"height":488}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":561,"height":495,"image_format":"jpeg","image_sha256":"a142268e0d7643f523a6e21bc1104902ae357e96950f12123db3467997d4af4f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_26_fig_5.jpg","caption":"FIG. 5. EPCs of Si PA-ALE processes obtained from MD simulations as functions of $\\mathrm{Ar^{+}}$ ion incident energy. The solid and dashed lines represent those for the thin and thick Cl layer deposition cases. Other ALE conditions are listed in Table I. The value of EPC given here is the average of etched depths per cycle from C3 to C6.","id":"train/atomic-layer-etching/simulation-usecase/26/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/26/fig_5","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the relationship between Ar+ ion incident energy (in eV) and etch per cycleEPC (in Å) for thin and thick Cl layer deposition methods.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Energy (eV) | Thin Cl layer deposition (Å) | Thick Cl layer deposition (Å) |\\n|-------------|-------------------------------|--------------------------------|\\n| 0 | 0 | 0 |\\n| 10 | 1 | 2 |\\n| 20 | 2 | 4 |\\n| 30 | 4 | 6 |\\n| 40 | 7 | 10 |\\n| 50 | 11 | 14 |\\n| 60 | 16 | 19 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The value of EPC given here is the average of etched depths per cycle from C3 to C6.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Because from the image, it can be seen that the EPC is higher in the thick Cl layer deposition case than in the thin Cl layer deposition case\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 20 eV Ar+ ion energy, the EPC correspond to Si monolayer as follows\\n1. The simulated EPCs for thin Cl layer deposition is 1.6 Å/cycle = 1.2 Si Monolayer/cycle\\n2. The simulated EPC for thick Cl layer deposition is 4.2 Å/cycle = 3 Si Monolayer/cycle.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":639,"height":439}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/Surface damage formation during atomic layer etching of silicon with chlorine adsorption.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":639,"height":439,"image_format":"jpeg","image_sha256":"7ee32e3c7d7a9deb9201add27ae08e0076fdb0ff6a158685cd4319ad1e00acb7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_26_fig_7.jpg","caption":"FIG. 7. Thicknesses of damaged-layers formed during the Si PA-ALE processes, obtained from MD simulations, as functions of the $\\mathrm{Ar^{+}}$ ion incident energy. The solid and dashed lines represent those for thin and thick Cl layer deposition cases. Other ALE conditions are listed in Table I. The value of the thickness here is the average of those over all six cycles, i.e., from C1 to C6.","id":"train/atomic-layer-etching/simulation-usecase/26/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/26/fig_7","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between energy (in eV) and thickness (in nm) for thin and thick Cl layer depositions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Energy (eV) | Thin Cl layer deposition (nm) | Thick Cl layer deposition (nm) |\\n|-------------|--------------------------------|---------------------------------|\\n| 0 | 0.0 | 0.0 |\\n| 10 | 0.8 | 0.9 |\\n| 20 | 1.5 | 1.7 |\\n| 30 | 1.8 | 2.0 |\\n| 40 | 2.0 | 2.0 |\\n| 50 | 1.8 | 2.1 |\\n| 60 | 1.8 | 2.3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The damaged-layer thickness observed here is significantly higher than the corresponding EPC at 20 eV ion energy and comparable at 60 eV\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It can be concluded that, for both thin and thick Cl layer deposition cases, the damaged-layer thicknesses weakly and more-or-less linearly increase with the increasing incident ion energy in the energy range studied here. With an increasing ion incident energy, the penetration depths of Arþ ions and recoiled Cl atoms increase but so do the etch rates. In other words, a large part of the damaged-layer formed during the desorption step is etched away at high ion incident energy. It is\\nalso seen that the damaged-layer is slightly thicker in the thick Cl layer deposition case.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The damaged-layer thickness was averaged over the first six cycles (i.e., from C1 to C6)\\nunder each ALE condition\"}]}]","bbox":[{"panel_id":"a","x":8,"y":8,"width":631,"height":458}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/Surface damage formation during atomic layer etching of silicon with chlorine adsorption.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":639,"height":466,"image_format":"jpeg","image_sha256":"d550cae19c19658303033ad1468fcbda333a3d9a9f8b4776d3189004dd178a4b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_26_fig_9.jpg","caption":"FIG. 9. Numbers of desorbed species as functions of the $\\mathsf{Ar^{+}}$ ion dose during the desorption step of the 6th cycle (C6) of Si PA-ALE processes. The ALE conditions are the same as those in Table I. The vertical axis denotes the accumulated number of species desorbed from a unit area of the substrate surface during the desorption step of this cycle. The adsorption steps for (a) and (b) and (c) are the thin Cl layer deposition and those for (c) and (d) are the thick Cl layer deposition. The incident energy of $\\mathsf{Ar^{+}}$ ions is $20\\mathrm{eV}$ for (a) and (c) and $50\\mathrm{eV}$ for (b) and (d).","id":"train/atomic-layer-etching/simulation-usecase/26/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/26/fig_9","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the number of species per cm² as a function of Ar⁺ ion dose for thin Cl layer deposition at 20 eV.\"},{\"panel_id\":\"b\",\"text\":\"The chart shows the number of species per cm² as a function of Ar⁺ ion dose for thin Cl layer deposition at 50 eV.\"},{\"panel_id\":\"c\",\"text\":\"The chart shows the number of species per cm² as a function of Ar⁺ ion dose for thick Cl layer deposition at 20 eV.\"},{\"panel_id\":\"d\",\"text\":\"The chart shows the number of species per cm² as a function of Ar⁺ ion dose for thick Cl layer deposition at 50 eV.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ar⁺ Ion Dose (×10¹⁶/cm²) | Si | Cl | SiCl | SiCl₂ | SiCl₃ |\\n|---------------------------|------|------|------|-------|-------|\\n| 0 | 0 | 0 | 0 | 0 | 0 |\\n| 5 | 1 | 2 | 3 | 0.5 | 0.2 |\\n| 10 | 2 | 3 | 4 | 0.8 | 0.3 |\\n| 15 | 3 | 4 | 4.5 | 1.0 | 0.4 |\\n| 18 | 3.5 | 4.5 | 5 | 1.2 | 0.5 |\"},{\"panel_id\":\"b\",\"text\":\"| Ar⁺ Ion Dose (×10¹⁶/cm²) | Si | Cl | SiCl | SiCl₂ | SiCl₃ |\\n|---------------------------|------|------|------|-------|-------|\\n| 0 | 0 | 0 | 0 | 0 | 0 |\\n| 5 | 10 | 1 | 2 | 0.5 | 0.2 |\\n| 10 | 20 | 1.5 | 2.5 | 0.8 | 0.3 |\\n| 15 | 30 | 2 | 3 | 1.0 | 0.4 |\\n| 18 | 35 | 2.2 | 3.2 | 1.2 | - |\"},{\"panel_id\":\"c\",\"text\":\"| Ar⁺ Ion Dose (×10¹⁶/cm²) | Si | Cl | SiCl | SiCl₂ | SiCl₃ |\\n|---------------------------|------|------|------|-------|-------|\\n| 0 | 0 | 0 | 0 | 0 | 0 |\\n| 5 | 0.5 | 25 | 3 | 1.0 | 0.5 |\\n| 10 | 1 | 28 | 4 | 1.5 | 0.8 |\\n| 15 | 1.2 | 30 | 4.5 | 1.8 | 1.0 |\\n| 18 | 1.5 | 32 | 5 | 2.0 | 1.2 |\"},{\"panel_id\":\"d\",\"text\":\"| Ar⁺ Ion Dose (×10¹⁶/cm²) | Si | Cl | SiCl | SiCl₂ | SiCl₃ |\\n|---------------------------|------|------|------|-------|-------|\\n| 0 | 0 | 0 | 0 | 0 | 0 |\\n| 5 | 10 | 20 | 3 | 1.0 | 0.5 |\\n| 10 | 20 | 25 | 4 | 1.5 | 0.8 |\\n| 15 | 30 | 28 | 4.5 | 1.8 | 1.0 |\\n| 18 | 35 | 30 | 5 | 2.0 | 1.2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"These images focus on the accumulated numbers of desorbed species in the desorption step of C6 as functions of the Ar+ ion dose under various conditions\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The accumulated numbers of desorbed monoatomic Si atoms and SiCl radicals, which are the next highest after monoatomic Cl, are almost the same initially. However, as the amount of Cl on the\\nsurface depletes, the rates of desorption for SiCl and SiCl2 decrease while monoatomic Si atoms continue to desorb. Furthermore, the desorption rate of monoatomic Si decreases as that of monoatomic Cl also decreases. It should be noted that the desorption of monoatomic Si does not mean the etching is purely due to physical sputtering. The physical sputtering yield of Si by 20 eV Ar+ ion bombardment is null essentially. The enhanced desorption of monoatomic Si atoms is likely caused by the bond breaking of Si atoms by Cl atoms remaining in the substrate\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. For thin Cl deposited films at high Ar+ ion, Si atoms mostly desorb as Cl bonded species in an\\nearly stage of the desorption step\\n2. For thick Cl deposited films, the desorption of SiClm is observed only in the very early stage of the Ar+ ion injection\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":10,"y":44,"width":632,"height":458},{"panel_id":"b","x":709,"y":44,"width":636,"height":459},{"panel_id":"c","x":10,"y":572,"width":632,"height":498},{"panel_id":"d","x":709,"y":572,"width":636,"height":498}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/26/Surface damage formation during atomic layer etching of silicon with chlorine adsorption.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1345,"height":1070,"image_format":"jpeg","image_sha256":"8664e3e4cd1075704ed893e7c58909d0e8e5f89e47d5da61a5dffe634714df27","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_27_fig_3.jpg","caption":"FIG. 3. (a) Contributions of Ga-O and Ga-N to the Ga3d peak area plotted as a function of sputter depth. The vertical dashed line indicates the spectra shown in (b). (b) The Ga3d signal after $20\\mathrm{s}$ of sputtering, highlighting the positions of the Ga-O and the Ga-N peaks at $20.5$ and $19.3\\mathrm{eV}$ , respectively.","id":"train/atomic-layer-etching/simulation-usecase/27/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/27/fig_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS depth profile showing the Ga-N and Ga-O contributions to the Ga3d peak area as a function of sputter depth. The Ga-O signal is highest at the surface and decreases with depth, indicating an oxidized surface layer extending approximately 10 nm into the film. The Ga-N signal increases with depth, reaching a maximum in the bulk region.\"},{\"panel_id\":\"b\",\"text\":\"Fitted Ga3d XPS spectrum after 20 s of sputtering, showing deconvolution into Ga-N (19.3 eV) and Ga-O (20.5 eV) components. At this depth, both bonding environments contribute to the signal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sputter depth (nm) | Ga-N Area (CPS eV) | Ga-O Area (CPS eV) |\\n|---|---|---|\\n| 0 | 2200 | 4100 |\\n| 1 | 3500 | 2800 |\\n| 3 | 4200 | 1900 |\\n| 5 | 4500 | 1500 |\\n| 10 | 4900 | 1000 |\\n| 20 | 5400 | 600 |\\n| 30 | 5800 | 100 |\\n| 35 | 5600 | 0 |\\n| 40 | 3500 | 0 |\\n| 45 | 100 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Envelope (Norm.) | Ga-N Component (Norm.) | Ga-O Component (Norm.) |\\n|---|---|---|---|\\n| 23.0 | 0.00 | 0.00 | 0.00 |\\n| 21.5 | 0.15 | 0.00 | 0.15 |\\n| 20.6 | 0.90 | 0.45 | 0.45 |\\n| 19.8 | 1.00 | 0.80 | 0.20 |\\n| 19.4 | 0.90 | 0.85 | 0.05 |\\n| 18.0 | 0.20 | 0.20 | 0.00 |\\n| 16.0 | 0.00 | 0.00 | 0.00 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It marks the sputter depth (after 20 s of sputtering) corresponding to the spectrum shown in subfigure (b).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The oxidized layer represents surface contamination that the ALE process aims to remove, and it affects the initial etch rate before reaching stoichiometric GaN.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Ga-O signal is highest at the surface (~4000 CPS·eV) and decreases rapidly within the first 10 nm, indicating a heavily oxidized surface layer. Beyond ~25 nm sputter depth, the Ga-O signal becomes negligible while Ga-N dominates, representing the transition to stoichiometric GaN in the bulk. This oxidized layer formed during storage in ambient conditions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ga-N is at 19.3 eV and Ga-O is at 20.5 eV.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":12,"width":346,"height":424},{"panel_id":"b","x":384,"y":12,"width":282,"height":424}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":666,"height":436,"image_format":"jpeg","image_sha256":"e403971f719da76da3c452f544fffb5c3598eadac368d3b38fd8f2a0ed0cb996","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_27_fig_4.jpg","caption":"FIG. 4. Gibbs free energy change $(\\Delta G)$ as a function of temperature for the fluorination half-cycle considering both the conversion (blue) and chemical vapor etching (red) reactions. Solid lines indicate plasma fluorination reactions (F radicals), while the thermal fluorination reactions (HF) are indicated by dashed lines. A vertical dashed line at $450^{\\circ}C$ highlights the change for the plasma fluorination reactions from the preferred conversion regime to the preferred etching regime. The ligand-exchange half-cycle is also included (dashed-dotted line, green) and shows a negative $\\Delta G$ over the entire evaluated temperature range.","id":"train/atomic-layer-etching/simulation-usecase/27/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/27/fig_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"DFT simulation results showing Gibbs free energy change (ΔG) vs. temperature for GaN ALE reactions. Plasma fluorination (F radicals, solid lines) shows both conversion and CVE reactions are thermodynamically favorable (ΔG < 0), with conversion preferred below 450°C. Thermal fluorination (HF, dashed lines) shows conversion is only favorable below ~250°C and CVE is unfavorable at all temperatures. The TMA ligand-exchange reaction (dash-dotted green) is favorable across the entire temperature range.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | F radical etching (eV/GaN) | F radical conversion (eV/GaN) | TMA Ligand-exchange (eV/GaN) | HF etching (eV/GaN) | HF conversion (eV/GaN) |\\n|---|---|---|---|---|---|\\n| -200 | -18.0 | -20.8 | -0.6 | 0.2 | -2.3 |\\n| 0 | -16.6 | -18.6 | -1.5 | 0.4 | -1.4 |\\n| 200 | -15.2 | -16.4 | -2.3 | 0.7 | -0.6 |\\n| 300 | -14.5 | -15.2 | -2.6 | 0.8 | -0.1 |\\n| 400 | -13.8 | -14.1 | -3.0 | 0.9 | 0.5 |\\n| 450 | -13.5 | -13.5 | -3.2 | 1.0 | 0.9 |\\n| 500 | -13.1 | -13.0 | -3.4 | 1.1 | 1.2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The DFT simulations show that F radical reactions have much more negative ΔG values than HF reactions, indicating stronger thermodynamic driving force. For HF, the conversion reaction becomes unfavorable above ~250°C and CVE is never favorable. In contrast, F radical conversion remains favorable up to 450°C with ΔG values around -15 to -20 eV/GaN, explaining why GaN is resistant to thermal fluorination but can be effectively fluorinated using plasma.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The process transitions from the preferred conversion regime to the preferred etching regime, making it unsuitable for self-limiting ALE.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The reaction is thermodynamically favorable and can proceed spontaneously.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The ligand-exchange reaction has negative ΔG across the entire evaluated temperature range, so it does not thermodynamically constrain the process window.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":653,"height":532}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":655,"height":536,"image_format":"jpeg","image_sha256":"7d6b9f50ee937491497f376e2869e192b48ae880553407ddd7efe6e64fda2846","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_13.jpg","caption":"FIG. 13. (Color online) Trends in the ALE synergy $(S_{y})$ as a function of pulse times for an AR of 4. (a) $S_{y}$ as a function of ion bombardment time $(T_{I})$ for three values of passivation time $(T_{P})$ . (b) $S_{y}$ as a function of $T_{I}$ and $T_{P}$ . The solid black line represents $\\mathrm{EPC} = 1$ and the dotted lines bound the range $0.9 < \\mathrm{EPC} < 1.1$ .","id":"train/atomic-layer-etching/simulation-usecase/3/fig_13","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_13","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"contour heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the relationship between ALE synergy and ion bombardment time, showing a peak at around 0.5 seconds.\"},{\"panel_id\":\"b\",\"text\":\"The heatmap visualizes the ALE synergy across different passivation times and ion bombardment times, with color intensity indicating the level of synergy.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion Bombardment Time (Ti, s) | ALE Synergy (%) Tp = 44 ms | Tp = 66 ms | Tp = 88 ms |\\n|------------------------------|----------------------------|------------|------------|\\n| 0.00 | 90 | 85 | 82 |\\n| 0.25 | 93 | 91 | 86 |\\n| 0.50 | 92 | 89 | 87 |\\n| 0.75 | 89 | 87 | 86 |\\n| 1.00 | 87 | 86 | 85 |\\n| 1.25 | 85 | 84 | 82 |\\n| 1.50 | 84 | 83 | 81 |\"},{\"panel_id\":\"b\",\"text\":\"| Passivation Time (Tp, ms) | Ion Bombardment Time (Ti, s) | ALE Synergy (%) |\\n|---------------------------|------------------------------|------------------|\\n| 5 | 0.30 | ~75 |\\n| 25 | 0.30 | ~85 |\\n| 45 | 0.30 | ~90 |\\n| 64 | 0.30 | ~88 |\\n| 84 | 0.30 | ~85 |\\n| 104 | 0.30 | ~82 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For short TI (<0.15 s), a large fraction of the passivated Si which covers the surface of the feature is not removed during the ion bombardment step. The continuous etching produced by ions in the passivation phase then makes a significant contribution to the total rate of etching, which then lowers Sy.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For long TI (>1 s), the passivated Si covering the feature is completely removed and the now bare silicon is exposed to ion bombardment for an extended time. The continuous etching produced during the ion bombardment step by the presence of chlorine radicals and physical sputtering then accounts for a significant portion of the EPC, which then lowers Sy\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In general, to minimize nonidealities during ALE, the optimized process should use the shortest pulse times which result in ~1ML material removal per cycle for the largest AR feature being etched. These optimized process times will be given by the point closest to the origin on the solid line in image (b). These conditions also correspond to the smallest contribution of continuous chemical sputtering, and will result in the smoothest surface and widest processing window in terms of AR.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"b","x":0,"y":433,"width":572,"height":549},{"panel_id":"a","x":3,"y":2,"width":568,"height":423}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":575,"height":983,"image_format":"jpeg","image_sha256":"faeb14d46918ec4feedfa8aed401ba7941fa4bf630df57d3b36943717e0b7ef8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_31_figure_3.jpg","caption":"Figure 3. Electronic potential energies $(\\Delta E)$ and Gibbs free energies $(\\Delta G^{80^{\\circ}C})$ of nickel formate $\\left(\\mathrm{Ni}(\\mathrm{FA})_{2}\\right)$ and formamidinate (Ni $\\left(\\mathrm{FAmd}\\right)_2)$ oligomer (olig.) complexes relative to the monomer (mono.) complex. Energy differences are normalized by nuclearity (nucl.) for comparison on a per-metal atom basis.","id":"train/atomic-layer-etching/simulation-usecase/31/figure_3","sample_id":"atomic-layer-etching/simulation-usecase/31/figure_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multiple line chart comparing electronic potential energies (ΔE) and Gibbs free energies (ΔG at 80 °C) per metal atom for nickel formate (FA) and formamidinate (FAmd) oligomers. The FA system shows its lowest ΔG at the dimer stage, while the FAmd system reaches its minimum ΔG at the trimer. These trends indicate ligand-dependent stabilization as oligomer size increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Oligomer State | ΔE_FA (eV) | ΔG_FA (80°C)(eV) | ΔE_FAmd(eV) | ΔG_FAmd (80°C)(eV) |\\n|----------------|-------------|------------------|--------------|------------------|\\n| Monomer | 0.0 | 0.0 | 0.0 | 0.0 |\\n| Dimer | ~ -1.0 | ~ -0.5 | ~ -1.50 | ~ -0.75 |\\n| Trimer | ~ -1.0 | ~ -0.4 | ~ -1.90 | ~ -1.25 |\\n| Tetramer| ~ -0.6 | ~ 0.00 | ~ -1.10 | ~ -0.25 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Trimer.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The FA complexes reach their lowest Gibbs free energy at the dimer stage, after which stability decreases for larger oligomers. In contrast, the FAmd complexes continue to stabilize beyond the dimer, reaching a minimum at the trimer before becoming less favorable at the tetramer. This indicates that ligand chemistry strongly influences the preferred oligomer size.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ligand systems that favor specific oligomer sizes may influence volatility, transport, or surface reactivity in vapor-phase processes. The observed preference for FA dimers and FAmd trimers suggests that ligand choice can tune aggregation behavior, which may be relevant when designing precursors for controlled deposition or etching.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":7,"width":610,"height":425}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/Thermodynamics of Atomic Layer Etching Chemistry on Copper and Nickel Surfaces from First Principles.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":613,"height":436,"image_format":"jpeg","image_sha256":"b5330113e43df77c12411a6862da4e08159ed6d37fe5295828f2e04eb21122c9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_31_figure_4.jpg","caption":"Figure 4. Adsorption energies of different terminations of the $\\mathrm{Ni / N}$ , $\\mathrm{Cu / N}$ , $\\mathrm{Ni / O}$ , and $\\mathrm{Cu / O}$ systems as a function of coverage. The labels \"PR\" and \"MP\" represent the \"pairing row\" and \"missing row\" reconstructions of the (110) surfaces, respectively.","id":"train/atomic-layer-etching/simulation-usecase/31/figure_4","sample_id":"atomic-layer-etching/simulation-usecase/31/figure_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multiple line chart showing Gibbs free energy of adsorption (ΔG_ads^80 °C) versus nitrogen coverage for the Ni/N system across several crystallographic facets. Adsorption becomes progressively less favorable with increasing coverage for all facets.\"},{\"panel_id\":\"b\",\"text\":\"Multiple line chart showing ΔG_ads^80 °C versus nitrogen coverage for the Cu/N system. Adsorption energies are consistently more positive than in Ni/N, indicating weaker nitrogen binding on Cu surfaces.\"},{\"panel_id\":\"c\",\"text\":\"Multiple line chart showing ΔG_ads^80 °C versus oxygen coverage for the Ni/O system, including labeled surface reconstructions such as (100) p(2×2), (110) (2×1)-MR, and (3×1)-MR. Oxygen adsorption is strongly favorable at low coverage and weakens with increasing coverage.\"},{\"panel_id\":\"d\",\"text\":\"Multiple line chart showing ΔG_ads^80 °C versus oxygen coverage for the Cu/O system, including pairing-row reconstructions. Adsorption becomes less favorable with increasing oxygen coverage and approaches thermoneutral behavior at high coverage.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Coverage θ_N (Å⁻²) | Blue Solid | Green Dash | Red Dash-Dot | Blue Dash | Purple Dash Dot | Yellow Solid |Teal Dash |\\n|---|---|---|---|---|---|---|---|\\n| 0.025 | ~ -0.6 | ~ +0.1 | ~ +0.3 | ~ 0.0 | ~ -0.25 | ~ +0.0 |~ +0.2 |\\n| 0.05 | ~ -0.4 | ~ +0.1 | ~ +0.3 | ~ +0.1 | ~ +0.00 | ~ +0.1 |~ +0.2 |\\n| 0.10 | ~ +0.25| ~ +0.4 | ~ +0.9 | ~ +0.4 | ~ +0.20 | ~ +0.5 |~ +0.5 |\\n| 0.15 | ~ +1.0 | ~ +1.1 | ~ +1.5 | - | ~ +0.90 | ~ +1.0 |~ +1.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Coverage θ_N (Å⁻²) | Blue Solid | Green Dash | Red Dash-Dot | Blue Dash | Purple Dash Dot | Yellow Solid |Teal Dash |\\n|---|---|---|---|---|---|---|---|\\n| 0.025 | ~ +0.8 | ~ +1.5 | ~ +1.7 | ~ +1.4 | ~ +1.00 | ~ +1.2 |~ +1.2 | \\n| 0.05 | ~ +0.8 | ~ +1.5 | ~ +1.6 | ~ +1.5 | ~ +1.00 | ~ +1.2 |~ +1.2 |\\n| 0.10 | ~ +1.5 | ~ +1.8 | ~ +2.1 | - | - | ~ +1.8 |~ +1.5 |\\n| 0.125 | ~ +1.8 | ~ +0.0 | ~ +2.9 | - | - | ~ +2.1 |~ +2.3 |\"},{\"panel_id\":\"c\",\"text\":\"| Coverage θ_O (Å⁻²) | Blue Solid | Green Dash | Red Dash-Dot | Blue Dash | Purple Dash Dot | Yellow Solid |Teal Dash |\\n|---|---|---|---|---|---|---|---|\\n| 0.05 | ~ -2.1 | ~ -1.8 | ~ -1.9 | ~ -1.9 | ~ -2.1 | ~ -2.0 |~ -2.0 |\\n| 0.10 | ~ -1.6 | ~ -1.5 | ~ -1.5 | ~ -1.6 | ~ -1.75 | ~ -1.6 |~ -1.5 |\\n| 0.15 | ~ -1.25| ~ -1.3 | ~ -0.9 | ~ -1.4 | ~ -1.25 | ~ -1.2 |~ -1.3 |\\n| 0.20 | - | - | ~ -0.5 | ~ -1.0 | ~ -1.00 | ~ -0.9 |~ -1.0 |\"},{\"panel_id\":\"d\",\"text\":\"| Coverage θ_O (Å⁻²) | Blue Solid | Green Dash | Red Dash-Dot | Blue Dash | Purple Dash Dot | Yellow Solid |Teal Dash |\\n|---|---|---|---|---|---|---|---| \\n| 0.05 | ~ -1.6 | ~ -1.4 | ~ -1.3 | ~ -1.4 | ~ -1.60 | ~ -1.4 |~ -1.5 | \\n| 0.10 | ~ -1.3 | ~ -1.2 | ~ -0.75 | ~ -1.2 | ~ -1.20 | ~ -1.0 |~ -1.2 |\\n| 0.15 | ~ -0.3 | ~ -0.6 | ~ -0.00 | ~ -0.9 | ~ -0.90 | ~ -0.6 |~ -0.9 |\\n| 0.20 | - | - | - | ~ -0.4 | ~ -0.50 | - |~ 0.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"80 °C (indicated by the superscript in ΔG_ads^80 °C).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the energy generally increases (becomes more positive/less stable) as coverage increases.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Subfigure (c) explicitly labels several surface reconstructions for the Ni/O system. For the (100) facet, it identifies $p(2 \\\\times 2)$ and $c(2 \\\\times 2)$ structures, while for the (110) facet, it highlights $(2 \\\\times 1)-MR$ and $(3 \\\\times 1)-MR$ \\\"missing row\\\" reconstructions. At the lowest coverage shown, the $(110) (2 \\\\times 1)-MR$ reconstruction (marked with a green cross) appears to be the most stable, having the lowest $\\\\Delta G$ value below -2.0 eV.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Ni/N system (a).\"}]}]","bbox":[{"panel_id":"a","x":11,"y":0,"width":481,"height":365},{"panel_id":"b","x":580,"y":0,"width":482,"height":363},{"panel_id":"c","x":10,"y":415,"width":482,"height":361},{"panel_id":"d","x":581,"y":415,"width":481,"height":357}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/Thermodynamics of Atomic Layer Etching Chemistry on Copper and Nickel Surfaces from First Principles.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":1094,"height":861,"image_format":"jpeg","image_sha256":"6c62d2ff52c7e64e6adadda23dc0559fb2fbb69ed3f910694687769be5152b35","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_4f80ad6bb517a6a7dc64ff0faf1cdcbf0b92399b65f69269988d6c0387e6b73f.jpg","caption":"(a)","id":"train/atomic-layer-etching/simulation-usecase/33/4f80ad6bb517a6a7dc64ff0faf1cdcbf0b92399b65f69269988d6c0387e6b73f","sample_id":"atomic-layer-etching/simulation-usecase/33/4f80ad6bb517a6a7dc64ff0faf1cdcbf0b92399b65f69269988d6c0387e6b73f","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart compares the total energy per atom over time between two computational methods: Density Functional Theory (DFT) and a Neural Network Potential (NNP). The x-axis represents time in picoseconds (ps), while the y-axis shows energy in electron volts per atom (eV/atom). Both methods exhibit similar dynamic energy profiles with overlapping fluctuations, suggesting that the NNP method reliably captures the same energy behavior as the more computationally expensive DFT. This highlights NNP’s potential for efficient and accurate simulations in extended time or larger systems.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (ps) | DFT (eV/atom) | NNP (eV/atom) |\\n|-----------|---------------|---------------|\\n| 0 | -7.20 | -7.22 |\\n| 10 | -7.05 | -7.07 |\\n| 20 | -6.95 | -6.98 |\\n| 30 | -7.10 | -7.13 |\\n| 40 | -6.90 | -6.92 |\\n| 50 | -7.00 | -7.03 |\\n| 60 | -6.85 | -6.88 |\\n| 70 | -6.95 | -6.97 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The NNP model closely mirrors the energy profile predicted by DFT over the full simulation time, maintaining similar fluctuation amplitudes and trends. While minor deviations are visible at certain time points, the overall agreement between the two methods supports the accuracy of the NNP in reproducing DFT-level energy predictions, making it suitable for large-scale simulations.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"DFT\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Reduced computational cost, Faster simulation times, Comparable accuracy for energy predictions, Scalability to larger systems or longer timescales\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":414,"height":200}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/4f80ad6bb517a6a7dc64ff0faf1cdcbf0b92399b65f69269988d6c0387e6b73f.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/4f80ad6bb517a6a7dc64ff0faf1cdcbf0b92399b65f69269988d6c0387e6b73f.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":414,"height":200,"image_format":"jpeg","image_sha256":"8ecadbbd44329ab71781a6f76519f32aa67b97ccff9800953807cbf2b665c3bb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_figure_6.jpg","caption":"(a) Figure 6. (a) The number of Si, N, H, and F atoms in the simulation cell during the etching process at $E_{\\mathrm{in}} = 50 \\mathrm{eV}$ and $\\theta_{\\mathrm{in}} = 0^{\\circ}$ . (b) Etching yield as a function of incident energy. The black dashed line represents the fitted function of the universal etching behavior.[52] The error bars indicate the standard deviations among three independent runs.","id":"train/atomic-layer-etching/simulation-usecase/33/figure_6","sample_id":"atomic-layer-etching/simulation-usecase/33/figure_6","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents the number of Si, N, H, and F atoms in a system as a function of HF dose. As HF exposure increases from 0 to 200 HF/nm², both silicon (Si) and nitrogen (N) atoms show a steady decline, indicating progressive etching or transformation. Fluorine (F) atoms increase significantly at lower doses and then level off, suggesting that surface fluorination saturates over time. Hydrogen (H) levels remain relatively constant, suggesting limited involvement or a dynamic equilibrium. Together, these trends reveal the elemental evolution occurring during HF exposure and suggest that nitrogen and silicon are preferentially removed or transformed while fluorine accumulates on the surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Dose (HF/nm²) | Si | N | H | F |\\n|---------------|----|----|----|----|\\n| 0 | 400 | 500 | 100 | 0 |\\n| 50 | 370 | 460 | 110 | 120 |\\n| 100 | 340 | 420 | 110 | 140 |\\n| 150 | 310 | 390 | 110 | 150 |\\n| 200 | 280 | 360 | 110 | 150 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the HF dose increases, the number of nitrogen and silicon atoms steadily decreases, indicating progressive material removal or chemical transformation. In contrast, the number of fluorine atoms increases sharply at lower doses and then plateaus, suggesting surface saturation or limited incorporation beyond a certain dose. The hydrogen atom count remains nearly constant, implying either low reactivity or steady-state behaviour. These trends highlight the distinct chemical roles each element plays during HF exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Fluorine (F)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Si and N are progressively removed ,Fluorine accumulates , Hydrogen remains constant\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":281,"height":264}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":281,"height":264,"image_format":"jpeg","image_sha256":"9c3fcdadec4a42bd6cdfdb4139b4146fbdc63a77a9798a8e6deedefc650ba84a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_4_figure_2.jpg","caption":"Figure 2. Etch per cycle of TiN films with varying $\\mathbb{C}\\mathbb{C}\\mathbb{I}_4$ pulse time at $460^{\\circ}C$ 6 s long $\\mathbb{N}_2$ purges were used. The figure compares the EPC for the binary process (red) to the CVE process (blue).","id":"train/atomic-layer-etching/simulation-usecase/4/figure_2","sample_id":"atomic-layer-etching/simulation-usecase/4/figure_2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 2 illustrates the etch per cycle (EPC) of TiN films as a function of CCl₄ pulse time at 460 °C, comparing two etching processes: the NbF₅–CCl₄ binary process and the CCl₄-only CVE process. The EPC increases with CCl₄ pulse time for both processes, with the binary process showing higher etch rates (up to ~0.8 Å at 3 s) compared to the CVE process (~0.5 Å at 3 s). No clear saturation of EPC is observed for either process, and no etching occurs when only NbF₅ is applied, consistent with computational predictions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| CCl₄ pulse time [s] | Etch per cycle NbF₅–CCl₄ [Å] | Etch per cycle CCl₄-only CVE [Å] |\\n|---|---|---|\\n| 0.0 | 0.0 | 0.0 |\\n| 0.5 | 0.3 | 0.3 |\\n| 1.0 | 0.4 | 0.4 |\\n| 3.0 | 0.8 | 0.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For both processes, the etch per cycle increases with increasing CCl₄ pulse time. The NbF₅–CCl₄ binary process consistently shows higher EPC values than the CCl₄-only CVE process. At 3 s pulse time, the EPC reaches approximately 0.8 Å for the binary process and 0.5 Å for the CVE process. No clear saturation is observed, indicating a nearly linear increase across the measured pulse times.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Enhanced reactivity of CCl₄ with fluorinated TiN surfaces, Formation of more volatile etch products such as TiCl₄ instead of less volatile species (TiCl₃, TiOCl, TiF₃), Possible three-dimensional etching due to fluorine diffusion through TiN grain boundaries, Self-limiting reactions of NbF₅ pulses followed by catalyzed CCl₄ adsorption at Nb sites\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 0.5 Å.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":4,"width":624,"height":595}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/Combining Experimental and DFT Investigation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":633,"height":598,"image_format":"jpeg","image_sha256":"c2a162c89584ecf10b088bb8ad3343b7d5a39c552229ba0526dc010bddeda724","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_4_figure_3.jpg","caption":"Figure 3. Effect of etch temperature on etch per cycle for the binary process (blue curve) as well as $\\mathrm{CCl_4}$ alone (blue curve) process. Both the precursor pulses and the purge times were fixed to 1 and 6 s, respectively.","id":"train/atomic-layer-etching/simulation-usecase/4/figure_3","sample_id":"atomic-layer-etching/simulation-usecase/4/figure_3","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 3 shows the effect of etch temperature on the etch per cycle of TiN films for the NbF₅–CCl₄ binary process and the CCl₄-only process. The etch per cycle increases with temperature for both processes, with the binary process consistently exhibiting higher etch rates. No significant etching occurs below 370 °C, and the trend is approximately linear up to 460 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Etch temperature [°C] | Etch per cycle NbF₅–CCl₄ [Å] | Etch per cycle CCl₄-only [Å] |\\n|---|---|---|\\n| 370 | 0.03 | 0.07 |\\n| 380 | 0.10 | 0.12 |\\n| 390 | 0.20 | 0.18 |\\n| 400 | 0.40 | 0.22 |\\n| 460 | 0.55 | 0.30 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch per cycle increases with temperature for both processes. The NbF₅–CCl₄ binary process consistently shows higher EPC values than the CCl₄-only process. At 370 °C, the EPC is 0.03 Å for the binary process and 0.07 Å for CCl₄-only. By 460 °C, the EPC rises to 0.55 Å for the binary process and 0.3 Å for the CCl₄-only process, demonstrating a nearly linear increase with temperature.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Enhanced reactivity of CCl₄ with fluorinated TiN surface, Formation of more volatile etch products such as TiCl₄ instead of less volatile species, Self-limiting reactions of NbF₅ followed by catalyzed CCl₄ adsorption, Higher activation of surface reactions at elevated temperatures\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 0.4 Å.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":4,"width":633,"height":589}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/Combining Experimental and DFT Investigation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":642,"height":595,"image_format":"jpeg","image_sha256":"c59b09f92224112076fab01d65532c1691bf4a04c3d7e988beec6c61ba4d045c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_4_figure_4.jpg","caption":"Figure 4. A change in the thickness values with total number of etch cycles at $460^{\\circ}\\mathrm{C}$ for TiN, $\\mathrm{SiO_2}$ , $\\mathrm{Al}_2\\mathrm{O}_3$ , and $\\mathrm{Si}_3\\mathrm{N}_4$ films. A TiN is selectively etched away by $\\mathrm{CCl_4}$ alone over other materials.","id":"train/atomic-layer-etching/simulation-usecase/4/figure_4","sample_id":"atomic-layer-etching/simulation-usecase/4/figure_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 4 shows the change in film thickness with the total number of etch cycles at 460 °C for TiN, SiO₂, Al₂O₃, and Si₃N₄ films. The TiN film is selectively etched by the CCl₄-only CVE process, with thickness decreasing linearly at approximately 0.3 Å per cycle, reaching about 13 nm after 500 cycles. In contrast, the thickness of Al₂O₃, SiO₂, and Si₃N₄ remains unchanged even after 1000 etch cycles, demonstrating the high selectivity of TiN etching over other materials.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Etch cycles | TiN (ALD) | Al₂O₃ (ALD) | SiO₂ (TOx) | Si₃N₄ (LPCVD) |\\n|---|---|---|---|---|\\n| 0 | 0 | 0 | 0 | 0 |\\n| 100 | 3 | 0 | 0 | 0 |\\n| 300 | 9 | 0 | 0 | 0 |\\n| 500 | 13 | 0 | 0 | 0 |\\n| 1000 | 30 | 0 | 0 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"no\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TiN film thickness decreases linearly with the number of etch cycles, reflecting an etch rate of approximately 0.3 Å per cycle. In contrast, the thicknesses of Al₂O₃, SiO₂, and Si₃N₄ remain essentially unchanged even after 1000 cycles. This demonstrates the high selectivity of TiN etching over the other materials under the same process conditions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Enables precise patterning and removal of TiN without damaging other substrate materials, Maintains integrity of dielectric layers (Al₂O₃, SiO₂) and nitride layers (Si₃N₄), Reduces the risk of contamination or undesired etching in multi-layer devices, Facilitates reliable manufacturing in microelectronics and nanofabrication processes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 13 nm.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":618,"height":567}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/Combining Experimental and DFT Investigation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":625,"height":575,"image_format":"jpeg","image_sha256":"3d50cc1867ca8e1cf4c6b42bf228f7c2de0551989d53b1b0b5a1a2774495f158","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_4_figure_7.jpg","caption":"Figure 7. An XPS depth profiling through remaining TiN film after partial etching at $460^{\\circ} \\text{C}$ . Total 300 cycles were performed with $0.5 \\text{s}$ of both $\\text{NbF}_5$ and $\\text{CCl}_4$ pulse lengths with $6 \\text{s}$ of $\\text{N}_2$ purges.","id":"train/atomic-layer-etching/simulation-usecase/4/figure_7","sample_id":"atomic-layer-etching/simulation-usecase/4/figure_7","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 7 presents an XPS depth profile of a partially etched TiN film after 300 cycles of the NbF₅–CCl₄ etch process at 460 °C, with 0.5 s pulses and 6 s N₂ purges. The surface initially contains high carbon (~26%) and oxygen (~31%), along with nitrogen (~20%), titanium (~15%), niobium (~5%), and small amounts of fluorine and silicon (<2%). After 15 s of argon sputtering, carbon decreases to ~4% and further to ~3% after 60 s, while Ti, N, and O stabilize at ~24–32%. Nb and F remain at 5–6% and 0.9–1.7%, respectively, indicating partial incorporation or diffusion within the TiN surface layer. Si originates from the underlying SiO₂. The profile confirms the elemental distribution and partial etch depth of the TiN film.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sputter time [s] | C1s (%) | N1s (%) | O1s (%) | F1s (%) | Si2p (%) | Ti2p (%) | Nb3d (%) |\\n|---|---|---|---|---|---|---|---|\\n| 0 | 26 | 20 | 31 | 1.5 | 1.5 | 15 | 5 |\\n| 15 | 4 | 32 | 28 | 1.0 | 1.5 | 24 | 5.5 |\\n| 60 | 3 | 32 | 28 | 0.9 | 1.5 | 24 | 6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Initially, the surface contains a high carbon concentration (~26%) and lower Ti (~15%) and N (~20%). After 15 s of argon sputtering, carbon decreases sharply to ~4%, while Ti, N, and O increase slightly and stabilize at ~24–32%. After 60 s of sputtering, carbon drops further to ~3%, and Ti, N, and O remain stable, reflecting the bulk composition of the remaining TiN film. This trend shows that surface contamination diminishes with depth while the elemental composition of the film core is revealed.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Determines the elemental distribution within the remaining TiN film, Reveals surface contamination and its removal with sputtering, Confirms partial incorporation of Nb and F into the TiN surface layer, Helps assess the effectiveness and uniformity of the etch process, Provides information about possible diffusion or adsorption mechanisms during etching\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 24%.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":595,"height":544}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/4/Combining Experimental and DFT Investigation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":600,"height":550,"image_format":"jpeg","image_sha256":"f874063fa37bbbf369670d108326bc4a8f3437bbfa1fbba410a2c2d73006a500","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_5_fig_5.jpg","caption":"Fig. 5 (a) Density profile of Ge and Cl element change before and after 200 times Ar bombardment with different bombardment energy on $25\\mathrm{eV}$ chlorinated surface. (b) Total etched number change (blue: Ge, red: Cl) with Ar bombardment energy for each chlorination condition, averaged from three samples with error bars calculated.","id":"train/atomic-layer-etching/simulation-usecase/5/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/5/fig_5","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multiple line chart"},{"panel_id":"e","label":"multiple line chart"},{"panel_id":"f","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the number density of Ge and Cl atoms at different z distances for initial and final states on 25 eV chlorinated surface.\"},{\"panel_id\":\"b\",\"text\":\"The line chart shows the number density of Ge and Cl atoms at different z distances for initial and final states on 50 eV chlorinated surface.\"},{\"panel_id\":\"c\",\"text\":\"The line chart shows the number density of Ge and Cl atoms at different z distances for initial and final states on 75 eV chlorinated surface.\"},{\"panel_id\":\"d\",\"text\":\"The line chart shows the number density of Ge and Cl atoms at different z distances for initial and final states on 100 eV chlorinated surface.\"},{\"panel_id\":\"e\",\"text\":\"The line chart illustrates the total etched numbers of Ge atoms at different Ar energies.\"},{\"panel_id\":\"f\",\"text\":\"The line chart illustrates the total etched numbers of Cl atoms at different Ar energies.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| z distance (Å) | Density Ge_initial | Density Cl_initial | Density Ge_final | Density Cl_final |\\n|---|---|---|---|---|\\n| 0 | 0 | 0 | 0 | 0 |\\n| 50 | 75 | 75 | 65 | 50 |\"},{\"panel_id\":\"b\",\"text\":\"| z distance (Å) | Density Ge_initial | Density Cl_initial | Density Ge_final | Density Cl_final |\\n|---|---|---|---|---|\\n| 0 | 0 | 0 | 0 | 0 |\\n| 50 | 75 | 75 | 50 | 25 |\"},{\"panel_id\":\"c\",\"text\":\"| z distance (Å) | Density Ge_initial | Density Cl_initial | Density Ge_final | Density Cl_final |\\n|---|---|---|---|---|\\n| 0 | 0 | 0 | 0 | 0 |\\n| 50 | 75 | 75 | 40 | 10 |\"},{\"panel_id\":\"d\",\"text\":\"| z distance (Å) | Density Ge_initial | Density Cl_initial | Density Ge_final | Density Cl_final |\\n|---|---|---|---|---|\\n| 0 | 0 | 0 | 0 | 0 |\\n| 50 | 75 | 75 | 15 | 5 |\"},{\"panel_id\":\"e\",\"text\":\"| Ar energy (eV) | Ge_5eV | Ge_10eV | Ge_25eV | Ge_50eV |\\n|---|---|---|---|---|\\n| 25 | 100 | 150 | 250 | 400 |\\n| 50 | 150 | 250 | 350 | 550 |\\n| 75 | 500 | 500 | 600 | 700 |\\n| 100 | 550 | 600 | 700 | 800 |\"},{\"panel_id\":\"f\",\"text\":\"| Ar energy (eV) | Ge_5eV | Ge_10eV | Ge_25eV | Ge_50eV |\\n|---|---|---|---|---|\\n| 25 | 50 | 100 | 200 | 300 |\\n| 50 | 100 | 200 | 250 | 400 |\\n| 75 | 250 | 250 | 400 | 500 |\\n| 100 | 250 | 300 | 450 | 600 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The threshold energy decreases as the chlorination energy increases.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 5 demonstrates that both the chlorination energy and the Ar bombardment energy have a strong and interrelated influence on the onset and efficiency of etching. As the chlorination energy increases, the surface becomes more disordered and vulnerable to atom detachment, which lowers the threshold Ar energy required to initiate etching. At the same time, higher bombardment energies lead to increased etching of both Ge and Cl atoms, indicating higher etching rates. However, for lower chlorination energies, the etched atom numbers tend to reach a plateau as the available chlorine becomes limited, reflecting a self-limiting chemical etching process. In contrast, higher chlorination energies delay this plateau because more chlorine is initially present, allowing etching to continue over a larger range of bombardment energies before transitioning into physical sputtering.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Cl density peak starts to decrease and the Ge surface begins to recede already at an Ar bombardment energy of 25 eV, with the etching effect becoming more obvious at 50 eV.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Complete etching occurs between 60–75 eV for the 5 eV chlorinated surface, 75-100 eV for the 10 and 25 eV chlorinated surfaces, and above 100 eV for the 50 eV chlorinated surface.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":301,"height":230},{"panel_id":"b","x":307,"y":5,"width":301,"height":232},{"panel_id":"c","x":1,"y":238,"width":300,"height":229},{"panel_id":"d","x":311,"y":233,"width":294,"height":226},{"panel_id":"e","x":4,"y":473,"width":308,"height":220},{"panel_id":"f","x":315,"y":471,"width":288,"height":220}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/Computational modelling of atomic layer etching of chlorinated germanium surfaces by argon.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":608,"height":694,"image_format":"jpeg","image_sha256":"55f34b8678815727fcc8ceb6ad2cefba4257aca61f956a9d8acba3d06b1cb07c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig2.jpg","caption":"FIG.2. $\\mathbb{C}\\mathbb{I}_2$ mass flow, pressure, and DC bias during one 7 s ALE cycle. The applied DC bias is $-65\\mathrm{V}$ for this case. The Ar flow (80 SCCM) is on continuously throughout the cycle. ICP power is 250 W.","id":"train/atomic-layer-etching/simulation-usecase/6/fig2","sample_id":"atomic-layer-etching/simulation-usecase/6/fig2","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multi-axis chart shows the evolution of DC self-bias voltage, chlorine gas flow, and chamber pressure over time. The process is divided into four clearly marked steps, each showing how plasma conditions and gas flow influence system parameters. The other panels are not separate figures but sub-intervals within (a). Their summaries have been removed to avoid redundancy and reflect the unified timeline.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | DC Self-Bias (V) | Cl₂ Flow (seccm) | P (mTorr) |\\n|----------|------------------|------------------|-----------|\\n| 0 | 0 | 0 | 22 |\\n| 1 | 0 | 20 | 22 |\\n| 2 | -60 | 20 | 21 |\\n| 3 | -60 | 0 | 20 |\\n| 4 | -60 | 0 | 20 |\\n| 5 | 0 | 20 | 21 |\\n| 6 | 0 | 0 | 22 |\\n| 7 | 0 | 0 | 22 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Step 1: Cl₂ On, ICP Off, Bias Off; Step 2: ICP On, Bias On; Step 3: Cl₂ Off, Bias Off; Step 4: All Off\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Pressure decreases slightly with ICP on, then returns to baseline; Cl₂ flow toggles between 20 seccm and 0 based on step.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"DC Self-Bias (V), Cl₂ Flow (seccm), Pressure (mTorr)\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":678,"height":475}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":678,"height":475,"image_format":"jpeg","image_sha256":"0d4aa542f6fdebdad861e3355b99790a7e5c932dce2847f8daeface47db3a613","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_8_fig_4.jpg","caption":"FIG. 4. Gibbs free energy change $(\\Delta \\mathbb{G})$ as a function of temperature for the fluorination half-cycle considering both the conversion (blue) and chemical vapor etching (red) reactions. Solid lines indicate plasma fluorination reactions (F radicals), while the thermal fluorination reactions (HF) are indicated by dashed lines. A vertical dashed line at $450^{\\circ}C$ highlights the change for the plasma fluorination reactions from the preferred conversion regime to the preferred etching regime. The ligand-exchange half-cycle is also included (dashed-dotted line, green) and shows a negative $\\Delta \\mathbb{G}$ over the entire evaluated temperature range.","id":"train/atomic-layer-etching/simulation-usecase/8/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/8/fig_4","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart illustrates the change in Gibbs free energy (ΔG) per unit GaN with respect to temperature for various etching methods.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | ΔG (eV/GaN) HF CVE |ΔG (eV/GaN) HF conversion |ΔG (eV/GaN) TMA ligand-exchange |ΔG (eV/GaN) F radical CVE |ΔG (eV/GaN) F radical conversion |\\n|---|---|---|---|---|---|\\n|-200 | 0 |-3|-0.5|-18.5|-21|\\n|-100 | 0 |-2|-1|-18|-20|\\n|0 | 0.5 |-2|-1.5|-16|-19|\\n|100 | 1 |-1|-2|-16|-18|\\n|200 | 1 |0|-2.5|-15|-17|\\n|300 | 1|0|-3|-14|-16|\\n|400 | 1.5 |1|-3.5|-14|-14|\\n|500 | 1.5 |1.5|-4|-14.5|-13|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The use of F radicals in a plasma as this lowers the gibbs energy the most.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"F radical conversion, as this has lower delta gibbs energies. Only from 450 degrees celcius and up will there be etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The chance decreases.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"+1 eV/GaN\"}]}]","bbox":[{"panel_id":"a","x":5,"y":3,"width":650,"height":532}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/Isotropic atomic layer etching of GaN using SF6 plasma and AI(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":655,"height":536,"image_format":"jpeg","image_sha256":"7d6b9f50ee937491497f376e2869e192b48ae880553407ddd7efe6e64fda2846","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_9_fig_7.jpg","caption":"Fig. 7. Schematic of the energy conversion process and snapshots of the density distribution with time evolution, the distributions on excited-state and ground-state potential energy curves are represented by solid and dashed lines, respectively. The vertical line $Z = Z_{d}$ is the defined critical value, the $\\mathrm{SiCl_2}$ molecule crossing this line can be identified as to be completely desorbed. Since the distribution for $Z > Z_{d}$ is small, it was multiplied by a factor of $4\\times 10^{5}$ if $Z > Z_{d}$ to make it visible.","id":"train/atomic-layer-etching/simulation-usecase/9/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/9/fig_7","subset":"multiple-line-chart","split":"train","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates the potential energy of a system as a function of surface coordinate Z at various time points (t=0 fs, t=5 fs, t=10 fs, t=400 fs). It shows the transition between the ground state and excited state, with terms like 'Excitation', 'Quenching', and 'Evolving' indicating the dynamics of the system.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Surface coordinate Z (Å) | Potential energy (eV) Ground state | Potential energy (eV) Excited state | Density Ground state |Density Excited state |\\n|---|---|---|---|---|\\n|-0.7 | 3 |4.2|-|-|\\n| 0 | 0 |3.1|Peak|Peak|\\n| 1 | 1.6 |2.6|-|-|\\n| 2 | 2.4 |2.5|-|-|\\n| 3 | 2.5 |2.5|-|-|\\n| 4 | 2.5 |2.5|-|-|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The critical distance is 3 angstroms, this is the distance from which a SiCl2 unit is defined to be fully desorbed.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Quenching is the transition from the excited state to the ground state by energy dissipation in the system, so from the red line to the blue line.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The excited state is induced by the absorption of photons with the correct energy. The amount of excited species reduces over time in the system, explaining the trend in the densities for the excited state and the ground state.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The desorption energy is 2.5 eV\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":665,"height":465}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/Mechanism of photoassisted atomic layer etching of chlorinated Si(111) surfaces Insight.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":666,"height":470,"image_format":"jpeg","image_sha256":"3588df2fe5c35bd9f911f66bc1602725f1a2716519139c855aec31c9fbf7a99f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/multiple-line-chart/validation/metadata.jsonl b/subsets/multiple-line-chart/validation/metadata.jsonl index 90d0c103e215d6d76f1337cc5886fe174b1f523b..d30dd65625b356e7414b82a88041e621a80f8951 100644 --- a/subsets/multiple-line-chart/validation/metadata.jsonl +++ b/subsets/multiple-line-chart/validation/metadata.jsonl @@ -1,37 +1,37 @@ -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig_10.jpg","caption":"FIG. 10. (Color online) The raw SE data (experimental) and the fit (simulated by Lorentz model) for $\\Delta$ and $\\Psi$ are shown as a function of photon energy for $\\mathrm{Ga}_2\\mathrm{O}_3$ thin film deposited by PEALD at $200^{\\circ}\\mathrm{C}$ and annealed at the temperature of $500^{\\circ}\\mathrm{C}$ .","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig_10","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig_10","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":469,"height":619,"image_format":"jpeg","image_sha256":"3331d8eb4e816aeaa193a28c55ba6a53a06056de8971dc0219f44bdf6464b98a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":284,"width":464,"height":332},{"panel_id":"a","x":2,"y":1,"width":464,"height":291}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line charts represents the experimental Spectroscopic ellipsometry (SE) measurements of ψ against photon energy and fitted (simulated by Lorentz model) for various angles (65°, 70°, 75°)\"},{\"panel_id\":\"b\",\"text\":\"The multiple line charts represents the experimental Spectroscopic ellipsometry (SE) measurements of Δ against photon energy and fitted (simulated by Lorentz model) for various angles (65°, 70°, 75°), the angles were represented in different symbols and fitted line is in red for ψ and green for Δ.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Photon Energy (eV) | ψ (degrees) | Experimental ψ (degrees) |\\n|--------------------|-------------|---------------------------|\\n| 1.5 | 26.97 | 65 |\\n| 1.5 | 24.24 | 70 |\\n| 1.5 | 23.21 | 75 |\\n| 2.0 | 36.48 | 65 |\\n| 2.0 | 33.23 | 70 |\\n| 2.0 | 32.83 | 75 |\\n| 2.5 | 52.22 | 65 |\\n| 2.5 | 50.01 | 70 |\\n| 2.5 | 47.55 | 75 |\\n| 3.0 | 61.21 | 65 |\\n| 3.0 | 59.27 | 70 |\\n| 3.0 | 52.11 | 75 |\\n| 3.5 | 37.53 | 65 |\\n| 3.5 | 35.04 | 70 |\\n| 3.5 | 35.96 | 75 |\\n| 4.0 | 31.29 | 65 |\\n| 4.0 | 30.10 | 70 |\\n| 4.0 | 28.50 | 75 |\"},{\"panel_id\":\"b\",\"text\":\"| Photon Energy (eV) | Δ (degrees) | Experimental Δ (degrees) |\\n|--------------------|-------------|---------------------------|\\n| 1.5 | 52.45 | 65 |\\n| 1.5 | 74.23 | 70 |\\n| 1.5 | 94.95 | 75 |\\n| 2.0 | 44.08 | 65 |\\n| 2.0 | 60.44 | 70 |\\n| 2.0 | 77.54 | 75 |\\n| 2.5 | 29.22 | 65 |\\n| 2.5 | 38.28 | 70 |\\n| 2.5 | 52.07 | 75 |\\n| 3.0 | 29.91 | 65 |\\n| 3.0 | 45.89 | 70 |\\n| 3.0 | 59.69 | 75 |\\n| 3.5 | 63.37 | 65 |\\n| 3.5 | 82.97 | 70 |\\n| 3.5 | 103.00 | 75 |\\n| 4.0 | 93.52 | 65 |\\n| 4.0 | 117.11 | 70 |\\n| 4.0 | 135.28 | 75 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Currently, the spectra in the 1.5–2.5 eV range are relatively smooth, indicating the film is likely thin enough that interference fringes are broad or minimal. If the thickness were doubled, the path length difference would increase, causing more rapid constructive and destructive interference. This would result in the appearance of distinct oscillatory fringes (waves) in both ψ and Δ within this transparent lower-energy region.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Acquire raw SE data (ψ and Δ spectra) at multiple angles.\\nConstruct an optical model stack (Substrate / Thin Film / Ambient).\\nSelect a dispersion relation (Lorentz oscillator) to parameterize the film's dielectric function.\\nPerform regression analysis (Levenberg-Marquardt) to minimize Mean Squared Error (MSE) between the model and experiment.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the Lorentz model is effective and the film structure is uniform.The fit is excellent across the entire spectral range and all three angles, as shown by the solid lines passing directly through the center of the symbols. This robust multi-angle agreement implies that the film is optically isotropic and homogeneous;\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The feature corresponds to an interband electronic transition or optical absorption edge.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig_11.jpg","caption":"FIG. 11. (Color online) Extracted refractive indices of $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ thin films deposited by PEALD at $200^{\\circ}\\mathrm{C}$ and annealed at various RTA temperatures by Lorentz simulation.","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig_11","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig_11","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_11.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":478,"height":344,"image_format":"jpeg","image_sha256":"44c2ad8fcb39788dffc32da54917829b0452b8c3b0810e31b912292167c2f955","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":474,"height":340}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line charts represents the variation of refractive index (n) of Ga₂O₃ thin films extracted from Lorentz simulation against photon energy (eV) for different thermal treatments (As-deposit, 500°C, 700°C, and 900°C). The refractive index clearly increases with increasing photon energy.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Photon Energy (eV) | Refractive Index (n) | Condition |\\n|--------------------|-----------------------|----------------|\\n| 1.5 | 1.82 | As-deposit |\\n| 1.5 | 1.83 | 500 |\\n| 1.5 | 1.92 | 700 |\\n| 1.5 | 1.92 | 900 |\\n| 2.0 | 1.85 | As-deposit |\\n| 2.0 | 1.86 | 500 |\\n| 2.0 | 1.94 | 700 |\\n| 2.0 | 1.95 | 900 |\\n| 2.5 | 1.89 | As-deposit |\\n| 2.5 | 1.90 | 500 |\\n| 2.5 | 1.99 | 700 |\\n| 2.5 | 1.98 | 900 |\\n| 3.0 | 1.95 | As-deposit |\\n| 3.0 | 1.96 | 500 |\\n| 3.0 | 2.04 | 700 |\\n| 3.0 | 2.04 | 900 |\\n| 3.5 | 2.03 | As-deposit |\\n| 3.5 | 2.03 | 500 |\\n| 3.5 | 2.11 | 700 |\\n| 3.5 | 2.10 | 900 |\\n| 4.0 | 2.14 | As-deposit |\\n| 4.0 | 2.15 | 500 |\\n| 4.0 | 2.20 | 700 |\\n| 4.0 | 2.19 | 900 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"As deposited\\n, 500 °C\\n, 700 °C\\n, 900 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 900°C annealing route is invalid due to the temperature constraint. The trade-off is clear: higher annealing temperatures (700°C, 900°C) provide a higher refractive index (better for index contrast) but require a high thermal budget that may damage underlying layers or substrates. The lower-temperature or as-deposited films offer lower thermal budget but also lower refractive index and likely poorer film quality.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the annealing temperature generally increases the refractive index. This is because higher temperature annealing promotes densification and enhanced crystallinity, reducing porosity and increasing the atomic packing density. A denser material with fewer voids has a higher polarizability, leading to a higher refractive index.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A higher refractive index implies that the annealed Ga₂O₃ film provides a stronger optical confinement (a larger index contrast with the substrate or cladding). This allows for the design of thinner waveguide cores while still effectively confining the light mode, enabling more compact integrated photonic devices compared to using the lower-index, as-deposited film.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig_3.jpg","caption":"FIG. 3. (Color online) Auger depth profile of as-deposited $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ thin film. The analysis was done by using $4\\mathrm{keV}$ As-ions. The nominal steh rate was $0.2\\mathrm{\\AA / s}$ . The film is homogeneous and stoichiometric.","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig_3","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":478,"height":342,"image_format":"jpeg","image_sha256":"3cd3ced76aa6f00931fedefe20ab7296a671d8c8692bc3ed2a07c0ec5c8194d0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":477,"height":340}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple-line chart shows the Auger depth profile of the as-deposited Ga₂O₃ films as a function of sputter time. Si corresponds to the substrate, and small traces of carbon are also detected. Clear and well-defined Ga and O intensitites are observed throughout the profile.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sputter time (a.u.) | O intensity (%) | Ga intensity (%) | Si intensity (%) | C intensity (%) |\\n|---------------------|-----------------|------------------|------------------|-----------------|\\n| 0 | 53 | 35 | 0 | 2 |\\n| 1 | 53 | 34 | 0 | 2 |\\n| 2 | 52 | 33 | 0 | 2 |\\n| 3 | 52 | 33 | 0 | 2 |\\n| 4 | 51 | 32 | 1 | 2 |\\n| 5 | 50 | 31 | 3 | 2 |\\n| 6 | 47 | 29 | 8 | 2 |\\n| 7 | 40 | 25 | 25 | 2 |\\n| 8 | 25 | 15 | 60 | 1 |\\n| 9 | 5 | 2 | 90 | 0 |\\n| 10 | 0 | 0 | 93 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Surface/Bulk Ga₂O₃ Film (High O and Ga signal).Interface Region - Crossover of signals.Silicon Substrate - High Si signal.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"AES with High-Energy Ions: Pro: Faster sputtering. Con: Can cause more atomic mixing and roughening, distorting depth resolution.\\n\\nXPS with Low-Energy Ions: Pro: Better depth resolution and more accurate quantification of light elements due to gentler sputtering.\\n\\nChoice: For accurate light-element quantification with minimal distortion, XPS with low-energy ions is preferable. The trade-off is slower data acquisition, but it preserves interfacial sharpness for more reliable profiling.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The observed O/Ga intensity ratio is approximately 1.6 (54%/32%), close to the theoretical stoichiometric ratio of 1.5.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"NO , While the sharp interface and low bulk carbon are positive, the as-deposited film likely has a high density of point defects and disorder (as suggested by the lower refractive index in the previous figure). These defects would act as charge traps, leading to poor channel mobility and unstable threshold voltage in a HEMT. Post-deposition annealing is typically required to reduce these defects and improve dielectric quality.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig_6.jpg","caption":"FIG. 6. (Color online) Leakage current curves of the $\\mathrm{Pt / Ga}_{2}\\mathrm{O}_{3} / \\mathrm{Si}$ structured thin films.","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig_6","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":475,"height":464,"image_format":"jpeg","image_sha256":"a632d466c875f1de4050cadb0737ce7b5c430f2f2b4607613609b1ac56806832","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":471,"height":461}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The muliple line chart shows the current density (A/cm²) as a function of gate voltage (V) for Ga₂O₃-based devices subjected to different post-deposition annealing temperatures: As-grown,500 °C,700 °C,900 °C. As-grown and 500 °C samples show higher current density, especially near 0 to –4 V, indicating higher leakage current. As annealing temperature increases to 700 °C and 900 °C, the current density decreases significantly, showing improved insulating behavior and lower leakage.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gate Voltage (V) | Current Density (A/cm²) | temperature |\\n|---|---|---|\\n| 0 | 10^-7 | As-grown |\\n| 0 | 10^-8 | 500 °C |\\n| 0 | 10^-7 | 700 °C |\\n| 0 | 10^-8 | 900 °C |\\n|-3 | 10^-2 | As-grown |\\n|-3 | 10^-3 | 500 °C |\\n|-3 | 10^-7 | 700 °C |\\n|-3 | 10^-7 | 900 °C |\\n|-6 | 10^-2 | As-grown |\\n|-6 | 10^-2 | 500 °C |\\n|-6 | 10^-7 | 700 °C |\\n|-6 | 10^-7 | 900 °C |\\n|-9 | - | As-grown |\\n|-9 | - | 500 °C |\\n|-9 | 10^-6 | 700 °C |\\n|-9 | 10^-7 | 900 °C |\\n| -12| - | As-grown |\\n| -12| - | 500 °C |\\n| -12| 10^-5 | 700 °C |\\n| -12| 10^-6 | 900 °C |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"As-grown\\n\\n, 500 °C\\n\\n, 700 °C\\n\\n, 900 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As-grown and 500 °C samples show higher current density, especially near 0 to –4 V, indicating higher leakage current.As annealing temperature increases to 700 °C and 900 °C, the current density decreases significantly, showing improved insulating behavior and lower leakage.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As-grown and 500 °C samples show higher current density, particularly between 0 and –4 V, indicating increased leakage current. In contrast, annealing at 700 °C and 900 °C significantly reduces the current density, with the 900 °C sample exhibiting the lowest leakage (≈10⁻⁹ A/cm²) due to improved oxide quality and defect reduction. Overall, higher annealing temperatures enhance dielectric stability, reduce defects, and improve the insulating behavior and performance of the films.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A 900°C annealed film would be essential as a gate oxide in a high-performance transistor. Its ultra-low leakage current (~10⁻⁹ A/cm²) minimizes static power consumption and prevents unwanted signal loss. The as-grown film's higher leakage would cause excessive power dissipation and unreliable switching, rendering it unsuitable for modern low-power electronics.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig_8.jpg","caption":"FIG. 8. (Color online) Transmission spectra of as-deposited $\\mathrm{Ga}_2\\mathrm{O}_3$ thin film and of those annealed at various RTA temperatures. The inset is the bandgap energies of the thin films.","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig_8","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":480,"height":350,"image_format":"jpeg","image_sha256":"f1dec3055cf59460d8b74f946508431aa31e12e9a91704004af1f6a5ae018792","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":240,"y":101,"width":230,"height":185},{"panel_id":"a","x":3,"y":9,"width":476,"height":340}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The main figure displays the optical transmission spectra of Ga2O3 thin films as a function of wavelength for various annealing temperatures (As-deposited, 500°C, 700°C, and 900°C). The data reveals a noticeable \\\"blue shift\\\" of the absorption edge toward shorter wavelengths as the temperature increases, indicating an increase in transparency at the UV edge.\"},{\"panel_id\":\"b\",\"text\":\"The inset figure plots the extracted optical band gap energy (Eg) against the annealing temperature. The trend confirms a significant widening of the band gap, increasing from approximately 5.00 eV for the as-deposited sample to nearly 5.25 eV for the sample annealed at 900°C, likely due to improved crystallinity.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | Transmission (%) | Condition |\\n|------------------|-------------------|----------------|\\n| 200 | 20 | As-deposited |\\n| 200 | 20 | 500°C |\\n| 200 | 20 | 700°C |\\n| 200 | 20 | 900°C |\\n| 250 | 40 | As-deposited |\\n| 250 | 40 | 500°C |\\n| 250 | 40 | 700°C |\\n| 250 | 40 | 900°C |\\n| 300 | 60 | As-deposited |\\n| 300 | 60 | 500°C |\\n| 300 | 60 | 700°C |\\n| 300 | 60 | 900°C |\\n| 350 | 80 | As-deposited |\\n| 350 | 80 | 500°C |\\n| 350 | 80 | 700°C |\\n| 350 | 80 | 900°C |\\n| 400 | 100 | As-deposited |\\n| 400 | 100 | 500°C |\\n| 400 | 100 | 700°C |\\n| 400 | 100 | 900°C |\\n| 450 | 100 | As-deposited |\\n| 450 | 100 | 500°C |\\n| 450 | 100 | 700°C |\\n| 450 | 100 | 900°C |\\n| 500 | 100 | As-deposited |\\n| 500 | 100 | 500°C |\\n| 500 | 100 | 700°C |\\n| 500 | 100 | 900°C |\\n| 550 | 100 | As-deposited |\\n| 550 | 100 | 500°C |\\n| 550 | 100 | 700°C |\\n| 550 | 100 | 900°C |\\n| 600 | 100 | As-deposited |\\n| 600 | 100 | 500°C |\\n| 600 | 100 | 700°C |\\n| 600 | 100 | 900°C |\\n| 650 | 100 | As-deposited |\\n| 650 | 100 | 500°C |\\n| 650 | 100 | 700°C |\\n| 650 | 100 | 900°C |\\n| 700 | 100 | As-deposited |\\n| 700 | 100 | 500°C |\\n| 700 | 100 | 700°C |\\n| 700 | 100 | 900°C |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | Band Gap Energy (eV) |\\n|------------------|----------------------|\\n| 200 | 5.0 |\\n| 400 | 5.1 |\\n| 600 | 5.2 |\\n|800 | 5.26 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The most significant change occurs between 500°C and 700°C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The band gap decreases as temperature increases. This is primarily caused by thermal lattice expansion, which increases the interatomic spacing and reduces the potential felt by electrons, lowering the energy required for electronic transitions. Additionally, increased electron-phonon interactions at higher temperatures contribute to this band gap narrowing.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Transmission spectroscopy is more practical for high-throughput screening. While photoreflectance can offer more precise determination of critical points in the dielectric function, transmission measurement is experimentally simpler, faster, and requires less complex sample preparation (e.g., no need for a Schottky contact), allowing for rapid collection of data across many samples and temperatures.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No.\\n\\nThe strong temperature-dependent band gap shift means the LED's emitted UV wavelength would change significantly with operating temperature, leading to unstable output color and intensity. For a temperature-stable device, a material with a smaller temperature coefficient of the band gap (dEg/dT) is required to minimize this performance drift.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_46_fig4.jpg","caption":"FIG.4.a $CV(100\\mathrm{kHz})$ curves and inset $JV$ same legend) for nominal 3, 9,and $15\\mathrm{nm}$ thick ALD $\\mathrm{HfO_2}$ layers on $50^{\\circ}\\mathrm{C}$ in situ passivated InGaAs. The actual $\\mathrm{HfO_2}$ and IL) thicknesses from TEM were $3\\mathrm{nm}$ $0.8\\mathrm{nm}$ IL), $9.4~\\mathrm{nm}$ $0.8~\\mathrm{nm}$ IL),and $16.8~\\mathrm{nm}$ $0.9 \\mathrm{nm}$ IL).No significant degradation of the bulk and interface properties is observed after repeated $CV$ measurement of the MOS structures. (b) $CV$ $\\mathrm{(H_2KHz)}$ and inset $JV$ same legend) characteristics for in situ $50^{\\circ}\\mathrm{C}$ $\\mathrm{H}_2\\mathrm{S}$ passivated and ex situ aqueous $(\\mathrm{NH_4})_2\\mathrm{S}$ passivated devices.","id":"validation/atomic-layer-deposition/experimental-usecase/46/fig4","sample_id":"atomic-layer-deposition/experimental-usecase/46/fig4","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/images/fig4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/OaConnor et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":478,"height":619,"image_format":"jpeg","image_sha256":"1dc8375d331c395ff01011ca1528dfb50c881a2bb640a01ff49eb277b214dfa5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":0,"width":470,"height":280},{"panel_id":"b","x":8,"y":304,"width":470,"height":315}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the capacitance (C) as a function of gate bias (Vg) for different film thicknesses of HfO2 gate dielectric layer (3nm, 9.4nm, 16.8nm). The channel layer is passivated in situ at 50°C. The inset shows the current density (J) as a function of gate bias.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the capacitance (C) as a function of gate bias (Vg) for two different passivations, ex-situ ((NH4)2S and in situ H2S) at 50°C. The inset shows the current density (J) as a function of gate bias.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gate Bias Vg (V) | 3 nm | 9.4 nm | 16.8 nm |\\n|-----------------------------|--------|--------|---------|\\n| -2 | 0.003 | 0.0025 | 0.002 |\\n| -1 | 0.004 | 0.003 | 0.0022 |\\n| -0.5 | 0.005 | 0.004 | 0.0025 |\\n| 0 | 0.006 | 0.005 | 0.003 |\\n| 0.5 | 0.008 | 0.0065 | 0.004 |\\n| 1 | 0.010 | 0.008 | 0.005 |\\n| 1.5 | 0.0115 | 0.0095 | 0.006 |\\n| 2 | 0.0125 | 0.0105 | 0.007 |\\n| 2.5 | 0.013 | 0.0115 | 0.0078 |\\n| 3 | 0.0135 | 0.012 | 0.0085 |\"},{\"panel_id\":\"b\",\"text\":\"| Gate Bias Vg (V) | (NH4)2S | 50°C H2S |\\n|-----------------------------|-------------------------------|----------------------|\\n| -2 | 0.003 | 0.0028 |\\n| -1 | 0.004 | 0.0035 |\\n| -0.5 | 0.005 | 0.0045 |\\n| 0 | 0.006 | 0.0055 |\\n| 0.5 | 0.0075 | 0.0068 |\\n| 1 | 0.0085 | 0.0078 |\\n| 1.5 | 0.009 | 0.0085 |\\n| 2 | 0.0095 | 0.009 |\\n| 2.5 | 0.0098 | 0.0095 |\\n| 3 | 0.010 | 0.0098 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"VFB (Flat-Band Voltage) is the applied gate voltage where the semiconductor's energy bands are flat (no bending), indicating zero net charge in the semiconductor. In figure b, flat band voltages would be approximately -2 to -1\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Although a slight Vfb shift is apparent, a similar profile is observed in the CV curves of both devices. Both devices have a similar Cmax in accumulation while the in situ passivated device appears to have slightly higher interface state density. The JV plot in the inset of (b) shows similar leakage current density at 1 V with a higher electric breakdown field for the in situ passivated device. This demonstrates that the in situ passivation approach employed in this work can achieve results comparable to those obtained using ex situ aqueous (NH4)2S passivation.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The leakage current densities at 1 V are\\n1. For the 3 nm device, ~2x10^−6 A/cm2\\n2. For the 9.4 nm device, ~3x10^−8 A/cm2 \\n3. For the 16.8nm device, ~2x10^−8 A/cm2\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_46_fig_2.jpg","caption":"FIG. 2. (a) High frequency $(100\\mathrm{kHz})$ capacitance-voltage characteristics and inset leakage current density as a function of gate bias (same legend), for unpassivated and in situ passivated $\\mathrm{Pd / 9nm}$ nominal ALD $\\mathrm{HfO_2 / InGaAs / InP}$ MOS devices. (b) Multiple frequency $CV$ , and inset hysteresis, curves for in situ $50^{\\circ}\\mathrm{C}$ $\\mathrm{H}_2\\mathrm{S}$ passivated InGaAs MOS device. No capacitance correction was made for inductive and resistive elements in the circuit. The average frequency dispersion of the flatband capacitance $C_{\\mathrm{fb}}$ , is $< 3.5\\%$ per decade for all devices. The hysteresis measured around $C_{\\mathrm{fb}}$ at $100\\mathrm{kHz}$ was $460\\mathrm{mV}$ for the unpassivated device, and 380, 585, and $410\\mathrm{mV}$ for the 50, 200, and $350^{\\circ}\\mathrm{C}$ in situ $\\mathrm{H}_2\\mathrm{S}$ passivated devices, respectively.","id":"validation/atomic-layer-deposition/experimental-usecase/46/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/46/fig_2","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/OaConnor et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":648,"height":811,"image_format":"jpeg","image_sha256":"80529c3f4d8692be3265326a9c06b8426f2c99a4dc43214473f19677f5af1892","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":2,"y":409,"width":646,"height":400},{"panel_id":"a","x":0,"y":0,"width":646,"height":402}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the capacitance (C) of a device as a function of gate bias (Vg) at various temperatures of hydrogen sulfide (H2S) passivation ( 50 °C, 200 °C and 350 °C) along with unpassivated sample for comparison. The inset provides a closer view of the current density (J) against gate bias.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the capacitance (C) of a device as a function of gate bias (Vg) at different frequencies (1 kHz, 10 kHz, 100 kHz, 1 MHz) for the 50 °C H2S passivated sample. The inset provides a closer view of the capacitance at 100 kHz.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gate Bias Vg (V) | Unpassivated | 350°C H2S | 200°C H2S | 50°C H2S |\\n|-----------------------------|--------------|-----------------------|-----------------------|----------------------|\\n| -2 | 0.0028 | 0.0026 | 0.0024 | 0.0022 |\\n| -1 | 0.003 | 0.0028 | 0.0026 | 0.0024 |\\n| 0 | 0.005 | 0.004 | 0.004 | 0.0038 |\\n| 1 | 0.006 | 0.0068 | 0.0058 | 0.0080 |\\n| 2 | 0.0072 | 0.0074 | 0.0062 | 0.0090 |\\n| 3 | 0.0078 | 0.0080 | 0.0070 | 0.0010 |\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"No the inset shows only the minimum hysteresis observed for 50 °C device. The hysteresis measured around Cfb at 100 kHz is as follows, \\n1. 460 mV for the unpassivated device\\n2. 380 mV for the 50 °C in situ H2S passivated device\\n3. 585 mV for the 200 °C in situ H2S passivated device\\n4. 410 mV for the 350 °C in situ H2S passivated device\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The fact that the 50 °C passivated device, which XPS showed to have no detectable S signal at the surface, displays the best electrical properties is further evidence that S is not the primary passivating element for the in situ process. It is possible to speculate that hydrogen may be passivating the InGaAs surface. One possibility is low temperature dissociative adsorption of H2S to produce H–S and H species which may bond to As at the epitaxial layer surface.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The minimum capacitance Cmin, at Vg =−2 V, \\n1. Unpassivated sample = 0.0028 F/m2 \\n2. Passivated at 350 °C = 0.0026 F/m2 \\n3. Passivated at 200 °C = 0.0024 F/m2 \\n4. Passivated at 50 °C= 0.0022 F/m2\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The in situ passivated surface at 50 °C device displays the highest maximum capacitance ( accumulation Cmax) and also exhibits the sharpest transition from minimum (depletion to accumulation).\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_47_fig_2.jpg","caption":"Fig. 2. Thermogravimetric analysis of $\\mathrm{Al(DEA)}_3$ and $\\mathrm{Al(DIA)}_3$ at atmospheric pressure and $50~\\mathrm{cc / min}$ He purge gas at a $10^{\\circ}\\mathrm{C / min}$ heating rate.","id":"validation/atomic-layer-deposition/experimental-usecase/47/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/47/fig_2","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/Wade et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":653,"height":414,"image_format":"jpeg","image_sha256":"56c17698cc108dbcc87271d4b777d972fe3f73d06018318652aaa7e1501ec290","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":1,"width":651,"height":410}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the weight percentage (Wt %) of Al (DEA)_3 and Al (DIA)_3, as a function of temperature. Both compounds exhibit a sharp decrease in weight percentage starting around 200°C, with Al (DEA)_3 having a slightly higher initial weight percentage.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature | Al (DEA)_3 | Al (DIA)_3 |\\n|---|---|---|\\n| 0 | 100 | 100 |\\n| 100 | 100 | 100 |\\n| 200 | 95 | 55 |\\n| 300 | 12 | 15 |\\n| 400 | 10 | 12 |\\n| 500 | 10 | 10 |\\n| 600 | 10 | 10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows a thermogravimetric analysis of Al(DEA)3 and Al(DIA)3 with the atomic percentage plotted as a function of temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Al(DEA)3 evaporates at approximately 200 °C, while Al(DIA)3 evaporates at 150 °C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 200°C, the atomic percentage of Al(DEA)3 is nearly 100%.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It reveals information about the thermal stability of compounds.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG7_a.jpg","caption":"","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG7_a","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG7_a","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG7_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG7_a.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"not_found"},"width":650,"height":517,"image_format":"jpeg","image_sha256":"bd26072982d5f249b27835311020db0c942f5a990bada92cda9613fb65470dd4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":645,"height":510}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure compares optical transmittance spectra of bare glass and NiO films deposited using different precursors over the 300–1000 nm wavelength range. All NiO-coated samples show reduced transmittance relative to bare glass, particularly in the near-UV region. Among the NiO films, the Bu-MeAMD-derived film consistently exhibits the highest transmittance, followed by the MeCp-based film, while the Alanis-based film shows the lowest transmittance across most of the visible range. The spectra flatten at longer wavelengths, indicating relatively stable optical behavior in the visible to near-infrared region.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | Glass (%) | NiO_Alanis (%) | NiO_MeCp (%) | NiO_Bu-MeAMD (%) |\\n|-----------------|-----------|----------------|--------------|------------------|\\n| 300 | ~12 | ~10 | ~10 | ~10 |\\n| 350 | ~88 | ~70 | ~78 | ~85 |\\n| 400 | ~90 | ~75 | ~82 | ~88 |\\n| 450 | ~92 | ~78 | ~85 | ~90 |\\n| 500 | ~93 | ~80 | ~86 | ~91 |\\n| 600 | ~92 | ~81 | ~87 | ~92 |\\n| 700 | ~91 | ~80 | ~86 | ~91 |\\n| 800 | ~90 | ~80 | ~85 | ~90 |\\n| 900 | ~89 | ~81 | ~85 | ~89 |\\n| 1000 | ~88 | ~82 | ~86 | ~90 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Bu-MeAMD shows the highest transmittance, followed by MeCp, with Alanis consistently lowest.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Higher transmittance can result from lower defect density, reduced absorption centers, or differences in film thickness and density. The Bu-MeAMD process may produce a more uniform film or fewer optically active defects, allowing greater light transmission.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Film thickness\\n-Surface roughness\\n-Grain size and microstructure\\n-Defect and impurity concentration\\n-Precursor chemistry and reaction completeness\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG7_b.jpg","caption":"(b)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG7_b","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG7_b","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG7_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG7_b.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":692,"height":523,"image_format":"jpeg","image_sha256":"a7c53832a255dd405a17f9fbd659617e057d13c5eb841946f30c2c5ab1d562c3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":689,"height":519}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares the optical absorption coefficients of NiO films deposited using three different precursors. All films show strong absorption in the UV region followed by a gradual decrease toward the visible and near-infrared. Across the full wavelength range, NiO_Alanis exhibits the highest absorption, NiO_MeCp shows intermediate behavior, and NiO_Bu-MeAMD displays the weakest absorption. The systematic separation between the curves indicates that precursor chemistry influences film density, defect concentration, or electronic structure, which in turn affects optical absorption.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | NiO_Alanis (cm⁻¹) | NiO_MeCp (cm⁻¹) | NiO_Bu-MeAMD (cm⁻¹) |\\n|---|---|---|---|\\n| 300 | ~3.5×10⁵ | ~3.0×10⁵ | ~1.5×10⁵ |\\n| 350 | ~1.2×10⁵ | ~8×10⁴ | 0 |\\n| 400 | ~1.1×10⁵ | ~7×10⁴ | 0 |\\n| 500 | ~1.0×10⁵ | ~6×10⁴ | 0 |\\n| 700 | ~8×10⁴ | ~5×10⁴ | 0 |\\n| 1000| ~6×10⁴ | ~4×10⁴ | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At shorter wavelengths, photons have enough energy to excite electronic transitions across the band gap or defect states, leading to strong absorption. As the wavelength increases, photon energy decreases, and fewer transitions are available, so absorption gradually weakens.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"NiO_Alanis shows the highest absorption across the full wavelength range.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lower absorption may indicate a lower defect density, reduced free-carrier concentration, or differences in film density and microstructure. These factors depend strongly on precursor chemistry and growth conditions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Optical absorption directly affects transparency, photoconductivity, and light–matter interaction. Choosing a film with the appropriate absorption profile is essential for applications such as transparent electronics, sensors, or photovoltaic interfaces.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_24_fig_10.jpg","caption":"Fig. 10. Comparison of reaction energetics for $\\mathrm{H}_2\\mathrm{O}$ reaction on the (A) $\\mathrm{SiO}_2\\mathrm{-O - ZrCl}_3$ surface site, (B) $\\mathrm{Zr - O - ZrCl}_3^*$ surface site, and (C) $\\mathrm{Si - O - ZrCl}_3$ surface site.","id":"validation/atomic-layer-deposition/simulation-usecase/24/fig_10","sample_id":"atomic-layer-deposition/simulation-usecase/24/fig_10","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/Joseph H. Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":591,"height":270,"image_format":"jpeg","image_sha256":"89f782b57ec44fd2fbed19bf6c5a4bc83592b4409097b6f4f43dbf414011b901","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":6,"width":589,"height":262}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the energy change (ΔE) in kcal/mol for different during the reaction of water with different substrates (A, B, and C).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction part | delta E, A |delta E, B |delta E, C |\\n| --- | --- | --- | --- |\\n|Start|0|0|0|\\n|Complex|-17|-15|-17|\\n| TS | 3 | 4 | 4 |\\n| HCl(a) | -5 | -2 | 0 |\\n| HCl(g) | 0 | 3 | 3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reaction that costs the least energy is pathway B, this shows the least negative delta E.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is clear that also the substrate matters. This seems to suggest that there is also an interaction of either the silicon or the zirconium with the HCl.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"That there is no energy gain by reaction as well as no energy loss.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The lowest recorded delta E is -17 kcal/mol.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_24_fig_4.jpg","caption":"Fig. 4. PESs of $\\mathrm{H}_2\\mathrm{O}$ reaction with all three Cl atoms on $\\mathrm{Zr}$ , calculated using the $\\mathrm{Si(OH)_3SiOZrCl_3}$ cluster for (A) removal of the first Cl atom, (B) removal of the second Cl atom, and (C) removal of the third Cl atom.","id":"validation/atomic-layer-deposition/simulation-usecase/24/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/24/fig_4","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/Joseph H. Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":795,"height":292,"image_format":"jpeg","image_sha256":"820bb17c2f96183f20362e52c74fa77862e6e7a290b15bedbdee74eae34b75bb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":6,"width":790,"height":282}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart illustrates the change in energy (ΔE) in kcal/mol for different steps in the reaction of chlorine groups at the surface with water, for the first (A), second (B), and third (C) chlorine group at the surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔE (kcal/mol) A |ΔE (kcal/mol) B |ΔE (kcal/mol) C |\\n|---|---|---|---|\\n| Start | 0 |0 |0 |\\n| Complex | -18|-17|-15|\\n| TS | 4|4|0|\\n| HCl (a) | -1|-3|-2|\\n| HCl (g)| 0.5|5|7|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The third chlorine group, this can be seen by the fact that this reaction has the lowest energy barrier.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This depends on which chlorine group has been removed. For the last chlorine group, more energy is required to have a transision of HCl (a) to HCl (g).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The energy barrier is 21 kcal/mol.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes this can be said, as the energy envolved decreases, for increasing number of removed chlorine groups.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_24_fig_8.jpg","caption":"Fig. 8. PESs calculated using the $\\mathrm{(SiH_3O)_3SiOZrCl_3}$ cluster for reaction of (A) removal of the first Cl atom, (B) removal of the second Cl atom, and (C) removal of the third Cl atom.","id":"validation/atomic-layer-deposition/simulation-usecase/24/fig_8","sample_id":"atomic-layer-deposition/simulation-usecase/24/fig_8","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/Joseph H. Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":589,"height":250,"image_format":"jpeg","image_sha256":"e0e4aeeed4b48e8c6543940611c51394ace87398314016b2646c4ef3a82d90ce","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":7,"width":586,"height":243}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the energy (E) in kcal/mol during the reaction step where a chlorine group reacts with water, for either the first (A), the second (B), or the third (C) chlorine group.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔE (kcal/mol) A |ΔE (kcal/mol) B |ΔE (kcal/mol) C |\\n|---|---|---|---|\\n| Start | 0 |0 |0 |\\n| Complex | -17|-15|-15|\\n| TS |3|3|3|\\n| HCl (a) | -1| 0|2|\\n| HCl (g)| 2| 5|8|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The second and third chlorine atoms are equally easy to be removed as they have the same activation energy, which is lower than the one of the first chlorine atom.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"19 kcal/mol\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"59 kcal/mol\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The precursor only adsorbs to hydroxyl groups so at least one is required. More is better as this will lead to higher quality films.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_24_fig_9.jpg","caption":"Fig. 9. Comparison of reaction energetics for $\\mathrm{ZrCl_4}$ reaction on the (A) $\\mathrm{SiO_2 - OH^*}$ surface site, (B) $\\mathrm{Zr - OH^*}$ surface site, and (C) $\\mathrm{Si - OH^*}$ surface site.","id":"validation/atomic-layer-deposition/simulation-usecase/24/fig_9","sample_id":"atomic-layer-deposition/simulation-usecase/24/fig_9","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/Joseph H. Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":592,"height":280,"image_format":"jpeg","image_sha256":"c7d2ca4f8b1a268570ae87e0e671233a0af7684e998f14bdf12bc187c33471c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":4,"width":588,"height":274}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the energy change (ΔE) in kcal/mol for the reaction of ZrCl4 with different substrate complexes labeled A, B, and C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔE (kcal/mol) A |ΔE (kcal/mol) B |ΔE (kcal/mol) C |\\n|---|---|---|---|\\n| Start | 0 |0 |0 |\\n| Complex | -17|-21|-28|\\n| TS | 0| -2|-8|\\n| HCl (g)| -5| -7|-12|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes there is faster saturation as there is less energy required for adsorption on SiO2 than on ZrO2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"SiO2 instead of Si or ZrO2 as this material shows the lowest activation energy.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"21 kcal/mol\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"C\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_15_fig_5.jpg","caption":"FIG. 5. \"Saturation curves\" showing self-limiting removal in (a) ALE for small EPC, (b) ALE for larger EPC, and (c) ALE quasi-self-limiting. In curve (d), continuous etching is shown for comparable etch time to illustrate lack of self-limiting behavior.","id":"validation/atomic-layer-etching/experimental-usecase/15/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/15/fig_5","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":606,"height":483,"image_format":"jpeg","image_sha256":"a61b4b6ec13ff5f94c337e5be9b3838183e52f52f9b6596518f274329c239344","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":601,"height":479}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_15_fig_7.jpg","caption":"FIG. 7. Plasma-assisted silicon ALE, after etching $50\\mathrm{nm}$ directionally. The results show characteristic ALE benefits at all length scales: (a) excellent depth uniformity across the wafer, (b) flat silicon etch front on the feature, and (c) smooth surface. Reprinted with permission from Kanarik et al., Solid State Technol., 56, 24 (2013). Copyright 2013, Lam Research Corporation.","id":"validation/atomic-layer-etching/experimental-usecase/15/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/15/fig_7","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":667,"height":850,"image_format":"jpeg","image_sha256":"cb5679997f0ab6b07f4d9720c6a84b5c2c1aa3102fedbff576ab1d7c6e1349a6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":44,"y":534,"width":615,"height":309},{"panel_id":"b","x":478,"y":4,"width":187,"height":453},{"panel_id":"a","x":2,"y":2,"width":462,"height":502}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_19_fig10.jpg","caption":"Fig.10. Selective etching of TiN at $250^{\\circ}C$ using $\\mathrm{O_3}$ and HF in the presence of other surrounding materials of $\\mathrm{Al}_2\\mathrm{O}_3$ $\\mathrm{HfO_2}$ $\\mathrm{ZrO_2}$ $\\mathrm{SiO_2}$ and $\\mathrm{Si_3N_4}$ . Reproduced from Ref. [20].","id":"validation/atomic-layer-etching/experimental-usecase/19/fig10","sample_id":"atomic-layer-etching/experimental-usecase/19/fig10","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":652,"height":511,"image_format":"jpeg","image_sha256":"30b824cc47bb3f472f0ccb5c6cedc6da0e8b20b9130607dcb0269eeb0d02f82c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":652,"height":511}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the film thickness of various materials (TiN, Al₂O₃, Si₃N₄, HfO₂, ZrO₂, SiO₂) over cycles at 250°C using O₃ & HF.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | TiN | Al₂O₃ | Si₃N₄ | HfO₂ | ZrO₂ | SiO₂ |\\n|---|---|---|---|---|---|---|\\n| 0 | 75 | 40 | 40 | 55 | 55 | 55 |\\n| 100 | 60 | 40 | 40 | 55 | 55 | 55 |\\n| 200 | 45 | 40 | 40 | 55 | 55 | 55 |\\n| 300 | 30 | 40 | 40 | 55 | 55 | 55 |\\n| 400 | 15 | 40 | 40 | 55 | 55 | 55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Only TiN is etched; Al₂O₃, HfO₂, ZrO₂, SiO₂, and Si₃N₄ show negligible thickness change.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"These oxides form stable, nonvolatile fluorides (AlF₃, HfF₄, ZrF₄) when exposed to HF. Unlike TiN which forms volatile TiF₄, these metal fluorides remain on the surface and do not desorb, preventing net material removal in the oxidation-fluorination mechanism.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 0.20 Å/cycle, calculated from roughly 55 Å removal over about 300 cycles.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN is used as gate electrode material in CMOS and as a copper diffusion barrier, requiring selective removal without damaging surrounding dielectric materials.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_19_fig_5.jpg","caption":"Fig. 5. Selective etching of $\\mathrm{Al_2O_3}$ , $\\mathrm{HfO_2}$ , $\\mathrm{ZrO_2}$ , $\\mathrm{SiO_2}$ , $\\mathrm{Si_3N_4}$ , and TiN by the metal ALE using fluorination and ligand-exchange reactions: (a) $\\mathrm{Sn(acac)}_2$ at $200^{\\circ}\\mathrm{C}$ and (b) TMA at $300^{\\circ}\\mathrm{C}$ . Reproduced from Ref. [29].","id":"validation/atomic-layer-etching/experimental-usecase/19/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/19/fig_5","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1208,"height":472,"image_format":"jpeg","image_sha256":"14a33fd792402c20fc731655ec88d855f475ca813b8fc61bc58cef54a8b1f9a9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":4,"width":621,"height":467},{"panel_id":"b","x":628,"y":0,"width":577,"height":470}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Shows film thickness versus ALE cycles using Sn(acac)₂ and HF at 200°C. Al₂O₃, HfO₂, and ZrO₂ show linear thickness decrease (etchable), while SiO₂, Si₃N₄, and TiN remain constant (not etchable), demonstrating material selectivity.\"},{\"panel_id\":\"b\",\"text\":\"Shows film thickness versus ALE cycles using TMA and HF at 300°C. Al₂O₃ and HfO₂ are etched, ZrO₂ shows slight etching, while SiO₂, Si₃N₄, and TiN are not etched, demonstrating different selectivity compared to Sn(acac)₂.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | TiN (Å) | SiO2 (Å) | HfO2 (Å) | Si3N4 (Å) | ZrO2 (Å) | Al2O3 (Å) |\\n|---|---|---|---|---|---|---|\\n| 0 | 68 | 49 | 52 | 39 | 48 | 47 |\\n| 50 | 70 | 48 | 52 | 40 | 47 | 35 |\\n| 100 | 69 | 47 | 50 | 40 | 42 | 23 |\\n| 200 | 69 | 47 | 45 | 40 | 28 | 0 |\\n| 400 | 69 | 46 | 33 | 39 | 0 | - |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Cycles | TiN (Å) | SiO2 (Å) | HfO2 (Å) | Si3N4 (Å) | ZrO2 (Å) | Al2O3 (Å) |\\n|---|---|---|---|---|---|---|\\n| 0 | 68 | 50 | 52 | 39 | 48 | 47 |\\n| 50 | - | 49 | 51 | - | 52 | 34 |\\n| 100 | - | 48 | 49 | - | 51 | 21 |\\n| 200 | - | - | 44 | - | 52 | 0 |\\n| 400 | 71 | 45 | 33 | 36 | 50 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"SiO₂ and Si₃N₄ resist etching because neither is spontaneously fluorinated by HF in the absence of water, and the Si-F bond is too strong to undergo effective ligand exchange reactions that would generate volatile Si-containing products.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN cannot be etched due to either the absence of stable/volatile Ti(III) reaction products or the difficulty of fluorinating Ti(IV) surface species using HF.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Linear thickness decrease indicates constant etch per cycle (EPC), confirming reproducible self-limiting etching behavior.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Al₂O₃ and HfO₂ can be etched by both; ZrO₂ is etched by Sn(acac)₂ but only slightly by TMA.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_6.jpg","caption":"Figure 6. Expansion of first two ALE cycles in Figure 5 showing the individual mass changes during the sequential TMA and HF exposures at 250, 275, 300, and $325^{\\circ}C$ .","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_6","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":667,"height":533,"image_format":"jpeg","image_sha256":"501eb812122ca55e07ac1c76e93ef9c9e643a54eea765cdd40dbe48b8f6145dd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":667,"height":533}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 6 shows the mass changes during the first two Al₂O₃ ALE cycles at 250, 275, 300, and 325 °C. The first TMA exposure produces mass gains of 27–32 ng/cm², corresponding to the reaction of surface AlOH* with TMA. The subsequent HF exposure adds 33–36 ng/cm² due to the conversion of AlCH₃* species to AlF* and formation of an AlF₃ surface layer. Mass changes are nearly constant across the temperatures during these early cycles, and higher temperatures lead to slightly larger gains. The figure highlights the initial nucleation behavior and the temperature-dependent early-stage mass changes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | 250°C (ng/cm^2) | 275°C (ng/cm^2) | 300°C (ng/cm^2) | 325°C (ng/cm^2) |\\n|----------|-----------------|-----------------|-----------------|-----------------|\\n| 1 | ~25 | ~25 | ~25 | ~25 |\\n| 30 | ~65 | ~62 | ~60 | ~58 |\\n| 60 | ~68 | ~62 | ~64 | ~60 |\\n| 90 | ~60 | ~48 | ~40 | ~20 |\\n| 120 | ~70 | ~60 | ~58 | ~40 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 cycles of sequential TMA and HF dosing.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mass change increase until 60 s, and then it shows a decrease in its values.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"325 °C\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher temperatures result in a greater removal of AlF3 from the surface and greater fluorination of Al2O3.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"325 degrees results in a net decrease of around 20 nm/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, it seems as if the initial cycle is not temperature depentent. For all temperatures similar mass changes are recorded.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If a linear relation is expected between etch rate and temperature, the final mass change level of 300 degrees celcius should be lower (equally spaced between the level of 275 and 325 degrees celcius).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that there is net adsorption of TMA at the surface after which it starts etching as opposed to etching from the start.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It indicates that mass changes occur in discrete, repeatable steps within each cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"325 °C shows the largest overall mass swing within one cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF removes fluorinated surface species formed during TMA exposure, leading to controlled material removal and mass loss.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At lower temperatures, the final mass after each cycle remains higher than at elevated temperatures. This indicates smaller net mass loss over the same number of cycles. Such differences are relevant when comparing cumulative removal across temperatures.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The first HF exposure converts AlCH₃* species to AlF* via AlCH₃* + HF → AlF* + CH₄, and fluorinates the underlying Al₂O₃ through Al₂O₃ + 6HF → 2AlF₃ + 3H₂O. This spontaneous reaction (ΔG ≈ −50 kcal) creates the AlF₃ surface layer that TMA can subsequently remove through ligand-exchange, enabling cyclic etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mass loss begins during the second cycle at 275°C, 300°C, and 325°C, while 250°C requires a third cycle before etching onset.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The arrows mark the timing of sequential precursor exposures—blue arrows indicate TMA doses and red arrows indicate HF doses during the ALE cycles.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At higher temperatures, TMA removes a larger fraction of the AlF₃ surface layer through ligand-exchange reactions, producing more volatile AlF(CH₃)₂ products. The percentage of AlF₃ removed increases from 19% at 250°C to 74% at 325°C, explaining the pronounced mass loss at 325°C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Etching occurs at ~65 seconds (TMA pulse).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the final mass is effectively higher (or barely changed) compared to the start of the cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 250°C (Red), the mass drop is negligible, implying the thermal energy is insufficient to drive the ligand-exchange reaction between TMA and the fluorinated surface. In contrast, at 325°C (Green), the massive drop indicates the barrier has been overcome, enabling rapid and efficient volatilization. This strong temperature dependence confirms the process is kinetically controlled by a significant energy barrier.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ideally, an ALE step should be self-limiting, showing a sharp drop followed by a flat plateau (saturation). The slight continuous downward slope seen in the Green line (325°C) suggests a loss of self-limiting behavior, potentially due to thermal desorption of the film itself or a secondary CVD-like reaction. This instability makes precise depth control more difficult compared to the stable plateaus seen at intermediate temperatures (e.g., 300°C, Black line).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. The first TMA exposure displays mass gains of ΔMTMA = 27−32 ng/cm2 at 250−325 °C\\n2. The first HF exposure shows mass gains of ΔMHF = 33−36 ng/cm2 at 250−325 °C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The fluorination reaction Al2O3 + 6HF → 2AlF3 + 3H2Ois spontaneous over the temperature range from 250 to 325 °C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After the first HF exposure, the next TMA exposure removes the AlF3 layer on the Al2O3 substrate. Figure shows that mass losses during the TMA and HF cycles begin with the second TMA and HF cycle for temperatures from 275−325 °C. The\\nTMA and HF cycles at 250 °C show a mass loss after the third ALE cycle. The higher temperatures produce both a larger mass loss for the removal of AlF3 by TMA and a larger mass gain for the subsequent fluorination of Al2O3 by HF.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"250°C, 275°C, 300°C and 325°C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After 60 seconds, which corresponds to the beginning of the second ALE cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"These mass gains result from the reaction of AlOH* surface species with TMA according to AlOH* + Al(CH3)3 → AlOAl(CH3)2* + CH4.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After the first ALE cycle, the mass loss during TMA exposure increases with temperature (roughly from 10 ng/cm^2 to 40 ng/cm^2), whereas the mass gain during HF exposure remains constant around 35-38 ng/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The first TMA exposure causes a mass gain because TMA reacts with Al₂O₃ surface, leaving Al–CH₃–containing surface species. This methylation increases the measured mass. After HF converts the surface into an AlF₃-like fluorinated layer, TMA mainly acts as the etch step by reacting with that fluoride to form volatile AlF(CH₃)₂ that desorbs, producing the mass drop.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TMA exposure half-cycle shows the strongest temperature dependence. This is indicated by the increasing magnitude of the mass drop during TMA as temperature rises, meaning TMA removes a larger fraction of the fluorinated surface at higher temperature. By comparison, the HF step’s mass gain changes much less across the same temperature range, consistent with it reaching a self-limited endpoint under the pulse conditions used.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"250°C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing temperature reduces the net mass retained after each cycle. While all temperatures show stepwise increases during TMA exposure and decreases during HF exposure, the 325 °C trace exhibits significantly lower mass accumulation, indicating enhanced etching or reduced adsorption at higher temperature.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA exposures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"250 °C ,275 °C ,300 °C , 325 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Higher temperatures lead to slightly larger mass gains during both TMA and HF exposures, reflecting more efficient surface reactions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"TMA exposure: AlOH reacting with Al(CH₃)₃ → formation of AlOAl(CH₃)₂, HF exposure: AlCH₃ reacting with HF → formation of AlF and AlF₃ surface layer\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It helps determine the nucleation behavior, confirms self-limiting reactions, and allows estimation of the thickness of the AlF₃ surface layer, which is critical for precise etch depth control in ALE processes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The first TMA exposure reacts with surface AlOH* species, resulting in a mass gain of 27–32 ng/cm² depending on the temperature. The subsequent HF exposure converts AlCH₃* species to AlF* and forms an AlF₃ surface layer, producing an additional mass gain of 33–36 ng/cm². These sequential reactions illustrate the self-limiting and surface-specific nature of the ALE process during the early cycles.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_8.jpg","caption":"Figure 8. Temperature dependence of (a) $\\Delta M_{\\mathrm{TMA}}$ and $\\Delta M_{\\mathrm{HF}}$ and (b) MCPC for $\\mathrm{Al}_2\\mathrm{O}_3$ ALE.","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_8","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":670,"height":683,"image_format":"jpeg","image_sha256":"a72ece1df629144e60bf98d8d4389e6f8e4aded1ded57da16db6bc0fcfb2b5d9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":665,"height":299},{"panel_id":"b","x":0,"y":303,"width":666,"height":375}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart shows how ΔM_TMA and ΔM_HF vary with temperature. As temperature increases, ΔM_TMA becomes more negative, indicating greater mass loss during TMA exposure, while ΔM_HF increases, indicating greater mass gain during HF exposure.\"},{\"panel_id\":\"b\",\"text\":\"The line chart shows MCPC as a function of temperature. MCPC decreases steadily with increasing temperature, indicating a larger net mass loss per cycle at higher temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | ΔM_TMA (ng/cm²·cycle) | ΔM_HF (ng/cm²·cycle) |\\n|------------------|------------------------|-----------------------|\\n| 250 | ~-15 | ~5 |\\n| 275 | ~-20 | ~10 |\\n| 300 | ~-30 | ~15 |\\n| 325 | ~-40 | ~20 |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | MCPC (ng/cm²·cycle) |\\n|------------------|---------------------|\\n| 250 | ~-10 |\\n| 275 | ~-15 |\\n| 300 | ~-20 |\\n| 325 | ~-25 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"250 °C\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, this is not given as at a certain point desorption can have a roll. Thereby eliminating the ALE mechanism.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For this MCPC 300 degrees celcius should be chosen as temperature.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It indicates a larger net mass loss per ALE cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Since the etch rate per cycle (MCPC) changes significantly with temperature, small variations in temperature across a wafer would lead to different amounts of material being removed. Therefore, precise and uniform temperature control is essential to achieve uniform etching depths and consistent device performance across the entire substrate.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 250°C, the MCPC is nearly zero, meaning the mass added by HF is almost exactly canceled by the mass removed by TMA, resulting in no net etch. The penalty is that the process effectively stops working as an etch; to remove any significant thickness, the cycle count would need to be prohibitively high, or the process would simply stagnate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the process is robust across this temperature range, with the opposing half-cycles compensating. A production tool can select a temperature based on throughput (higher T) or precision (lower T) without drastically altering the net etch depth per cycle, simplifying process window definition.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As ΔMTMA mass losses increase at higher temperatures compared to ΔMHF and the MCPC also decreases with increase in temperature, it can be concluded that the temperature dependence of ΔMTMA observed in graph a dominates the temperature dependence observed in the MCPC shown in graph b\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ΔMTMA/MCPC ratio for different temperatures are as follows\\n\\n1. 250 °C, 2.55\\n2. 275 °C, 1.94\\n3. 300 °C, 1.83\\n4. 325 °C, 1.81\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the change in mass loss during TMA exposure is larger than the mass gain during HF exposure, the MCPC decreases with temperature.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The temperature dependence of the mass change during TMA exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 325 °C, the MCPC point is below zero, which means the net mass change per cycle is negative. That implies the process is etch-dominated at this temperature. In other words, deposition during the HF half-cycle does not fully compensate the loss from the TMA half-cycle, so you get net etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"250 °C\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Low temperature → higher MCPC, Mid temperature → moderate MCPC, High temperature → lowest MCPC\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher temperature reduces surface reaction uptake and lowers mass change.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mass loss increases progressively with temperature after TMA exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TMA dose seems to be more temperature dependent as the curve has a higher absolute slope.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The MCPC can be caluclated by adding both the delta M of TMA and HF, which gives an MCPC of -20 ng/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ΔM_TMA and ΔM_HF change in opposite directions with increasing temperature. ΔM_TMA becomes more negative, indicating greater mass loss during the TMA step, while ΔM_HF becomes more positive, indicating greater mass gain during the HF step. Together, these opposing trends influence the net mass change per cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"325 °C yields the largest ΔM_HF value.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"250°C: 0.14 Å/cycle; 275°C: 0.34 Å/cycle; 300°C: 0.51 Å/cycle; 325°C: 0.75 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Higher temperatures enable TMA to remove a larger fraction of the AlF₃ surface layer during the ligand-exchange reaction. At 250°C, only ~19% of the AlF₃ layer is removed, while at 325°C, ~74% is removed. When more AlF₃ is removed, more fresh Al₂O₃ is exposed for fluorination in the subsequent HF step, leading to greater net material removal per cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Greater AlF₃ removal by TMA exposes more Al₂O₃ surface, which allows more fluorination (and thus larger mass gain) during the subsequent HF exposure.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It allows the etch rate to be tuned by adjusting process temperature, providing flexibility for different application requirements.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"HF acts as the surface modification agent, reacting with the oxide to form a solid fluoride layer (adding mass). TMA acts as the removal agent, reacting with that fluoride layer to form volatile species that leave the surface (removing mass). The cycle works because the mass removed by TMA is greater than the mass added by HF.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increase in (ΔM(HF) implies that at higher temperatures, fluorine penetrates deeper or saturates the surface more densely. This creates a larger reservoir of Al-F bonds available for the ligand-exchange reaction. Consequently, the TMA step consumes this thicker layer, resulting in a proportionally larger negative mass loss (ΔM(TMA)).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Followed same reaction sequence of 2−30−1−30 on initial Al2O3 substrates.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ΔMTMA shows progressively larger mass losses at higher temperatures. In contrast, ΔMHF reveals progressively larger mass gains at higher temperatures.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the temperature increases, the mass change during TMA exposure keeps decreasing linearly.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As temperature increases, the mass change during HF exposure keeps increasing linearly.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA half-cycle (|−40| > |+15|).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ΔM_TMA becomes increasingly negative with temperature, indicating greater mass loss during TMA exposure, while ΔM_HF increases, indicating greater mass gain during HF exposure. This suggests that both half-reactions become more pronounced at higher temperatures.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Temperature.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"250 °C, 275 °C, 300 °C, 325 °C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the temperature increases, both ΔMTMA and ΔMHF drop steadily, which shows that each reaction step contributes less mass compared with lower temperatures. This trend suggests reduced reaction uptake at elevated temperatures, which is typical when surface adsorption becomes less favorable in ALE conditions.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_1.jpg","caption":"FIG. 1. (Color online) (a) Crystalline $\\mathrm{SiO}_2$ sample used for the molecular dynamics investigation in this article. (b) The $\\mathrm{SiO}_2$ sample after 100 impacts of $20\\mathrm{eV}\\mathrm{CF}_2^+$ ions. (c) The $\\mathrm{SiO}_2$ sample after 200 impacts of $20\\mathrm{eV}\\mathrm{CF}_2^+$ ions. FIG. 3. Fluorine concentration in the sample as a function of sample height for different numbers of $20\\mathrm{eV}\\mathrm{CF}_2^+$ ion impacts.","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_1","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":472,"height":369,"image_format":"jpeg","image_sha256":"ff2647a21c8494d674743a9c02d57afa93da2216e8ae8cae60c0082cc2716ce9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":471,"height":364}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the fraction of fluorine (F) as a function of height (h) in angstroms (Å). The chart includes three lines representing different impact scenarios: 100 impacts, 200 impacts, and 400 CF2+ impacts\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Height h (Å) | 100 impacts (%) | 200 impacts (%) | 400 impacts (%) |\\n|---|---|---|---|\\n| 18 | 0 | 0 | 0 |\\n| 20 | 0 | 0.5 | 2 |\\n| 21 | 1 | 3 | 7 |\\n| 22 | 3 | 7 | 12 |\\n| 23 | 5 | 11 | 22 |\\n| 24 | 8 | 15 | 32 |\\n| 25 | 18 | 30 | 48 |\\n| 26 | 35 | 52 | 60 |\\n| 27 | 60 | 62 | 63 |\\n| 28 | 78 | 58 | 65 |\\n| 29 | - | 67 | 68 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The F concentration increases and the profile broadens slightly as more ions impact the surface. However, the changes between 200 and 400 impacts are small, indicating the system approaches quasi-steady-state around 250 impacts. The passivation layer thickness remains approximately constant at ~8 Å.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around h = 18–20 Å.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The fluorocarbon passivation process is self-limiting. As F accumulates at the surface, available bonding sites become saturated and incoming CF₂⁺ ions increasingly reflect or sputter existing material rather than adding new F. This leads to a dynamic equilibrium where deposition and removal balance.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 8 Å.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_10.jpg","caption":"FIG. 10. Number of $\\mathrm{F}$ and $\\mathrm{C}$ atoms in the Si sample after bombardment with $\\mathrm{CF}_2^+$ ions. Results have been plotted for (a) $10\\mathrm{eV}$ and (b) $20\\mathrm{eV}$ ion energies.","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_10","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":470,"height":664,"image_format":"jpeg","image_sha256":"a8d3d2aadc0e6afe9503e88c500bc265a9f43bc5978c3b27e21d4c5d68ebce6d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":3,"y":303,"width":464,"height":356},{"panel_id":"a","x":2,"y":0,"width":460,"height":295}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the number of atoms (F and C) as a function of the number of CF₂⁺ ion impacts at 10 eV.\"},{\"panel_id\":\"b\",\"text\":\"The line chart shows the number of atoms (F and C) as a function of the number of CF₂⁺ ion impacts at 20 eV.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of CF2+ Ion Impacts | F (Number of Atoms) | C (Number of Atoms) |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 50 | 15 | 6 |\\n| 100 | 30 | 12 |\\n| 150 | 42 | 20 |\\n| 200 | 48 | 24 |\\n| 250 | 62 | 31 |\\n| 300 | 73 | 32 |\\n| 350 | 72 | 32 |\\n| 400 | 78 | 34 |\\n| 450 | 83 | 36 |\\n| 500 | 85 | 37 |\\n| 600 | 85 | 36 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of CF2+ Ion Impacts | F (Number of Atoms) | C (Number of Atoms) |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 50 | 25 | 8 |\\n| 100 | 45 | 10 |\\n| 150 | 56 | 12 |\\n| 200 | 63 | 11 |\\n| 250 | 68 | 11 |\\n| 300 | 62 | 9 |\\n| 350 | 72 | 10 |\\n| 400 | 80 | 10 |\\n| 450 | 80 | 8 |\\n| 500 | 78 | 8 |\\n| 550 | 70 | 6 |\\n| 600 | 71 | 5 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 10 eV, the film contains substantial carbon (C ~ 35–40 atoms at steady state) alongside fluorine. At 20 eV, carbon content drops to below 10 atoms while F remains around 75–80. This occurs because higher energy ions sputter C more efficiently, as F–Si bonds are stronger than C–Si bonds.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 450 CF₂⁺ ion impacts for both energies.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Because the F–Si bond is stronger than the C–Si bond.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10 eV.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_11.jpg","caption":"FIG. 11. $\\mathrm{F}$ density as a function of sample height in the Si sample with the fluorocarbon overlayer. Results have been plotted for $100$ , $300$ , and $600\\mathrm{eV}$ ion impacts on the initial crystalline sample. $\\mathrm{CF}_2^+$ ion energies are (a) $10$ and (b) $30\\mathrm{eV}$ .","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_11","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_11","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_11.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":466,"height":653,"image_format":"jpeg","image_sha256":"9e4132c98cc864382b66eff673ab41ab3c2a923d3b8e08ba36c3e3d3a73e2856","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":1,"y":306,"width":463,"height":347},{"panel_id":"a","x":3,"y":3,"width":459,"height":307}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"F density versus height at 10 eV for 100, 300, and 600 CF₂⁺ impacts. The F layer is narrow (~5 Å) and remains at a fixed position, indicating minimal substrate disturbance.\"},{\"panel_id\":\"b\",\"text\":\"F density at 30 eV. The profile is much broader, and the peak shifts to lower heights with increasing impacts, indicating that Si etching occurs simultaneously with passivation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Height h (Å) | 100 impacts (Atoms/ų) | 300 impacts (Atoms/ų) | 600 impacts (Atoms/ų) |\\n|---|---|---|---|\\n| 38 | 0.000 | 0.000 | 0.001 |\\n| 39 | 0.000 | 0.001 | 0.005 |\\n| 40 | 0.000 | 0.005 | 0.015 |\\n| 41 | 0.001 | 0.018 | 0.030 |\\n| 42 | 0.008 | 0.035 | 0.048 |\\n| 43 | 0.020 | 0.055 | 0.060 |\"},{\"panel_id\":\"b\",\"text\":\"| Height h (Å) | 100 impacts (Atoms/ų) | 300 impacts (Atoms/ų) | 600 impacts (Atoms/ų) |\\n|---|---|---|---|\\n| 28 | 0.000 | 0.000 | 0.000 |\\n| 30 | 0.000 | 0.000 | 0.005 |\\n| 31 | 0.000 | 0.002 | 0.025 |\\n| 32 | 0.000 | 0.005 | 0.038 |\\n| 33 | 0.000 | 0.015 | 0.025 |\\n| 34 | 0.001 | 0.028 | 0.010 |\\n| 35 | 0.003 | 0.033 | 0.002 |\\n| 36 | 0.008 | 0.022 | 0.001 |\\n| 37 | 0.018 | 0.010 | 0.000 |\\n| 38 | 0.024 | 0.005 | 0.000 |\\n| 39 | 0.018 | 0.002 | 0.000 |\\n| 40 | 0.012 | 0.000 | 0.000 |\\n| 42 | 0.005 | 0.000 | 0.000 |\\n| 44 | 0.001 | 0.000 | 0.000 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 30 eV, the CF₂⁺ ions have enough energy to etch the underlying Si while depositing the fluorocarbon layer. As Si is removed, the surface recedes and the F-containing layer moves downward. At 10 eV, the ion energy is too low for significant etching, so the passivation layer remains at a fixed position.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The local atomic number density of fluorine at each height in the sample.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 5 Å.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Below 30 eV, ideally around 10–20 eV.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_12.jpg","caption":"FIG. 12. (a) Number of Si atoms that are sputtered from the Si sample with the fluorocarbon overlayer (10 eV $\\mathrm{CF}_2^+$ , 300 impacts) as $\\mathrm{Ar^{+}}$ ions of different energies are bombarded on it. (b) Fraction of initial F left in the sample as $\\mathrm{Ar^{+}}$ ions of different energies are bombarded on the Si sample with the fluorocarbon overlayer (10 eV $\\mathrm{CF}_2^+$ , 300 impacts).","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_12","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_12","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_12.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":467,"height":658,"image_format":"jpeg","image_sha256":"b455fe9ea8c249e0b7a1e86807c053768f0634eadf9a98768a7cebb96ab91ddb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":1,"width":457,"height":303},{"panel_id":"a","x":0,"y":311,"width":467,"height":345}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Number of sputtered Si atoms versus Ar⁺ ion impacts at 20, 30, and 40 eV. At 20 eV, Si sputtering is self-limiting and virtually stops after ~500 impacts. At 40 eV, etching continues throughout.\"},{\"panel_id\":\"b\",\"text\":\"Fraction of initial F removed from the sample versus Ar⁺ impacts. F is consumed faster at higher energies, correlating with enhanced Si etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ar+ Ion Impacts | 20 eV (Sputtered Si Atoms) | 30 eV (Sputtered Si Atoms) | 40 eV (Sputtered Si Atoms) |\\n|---|---|---|---|\\n| 0 | 0 | 0 | 0 |\\n| 200 | 2 | 10 | 15 |\\n| 400 | 7 | 15 | 18 |\\n| 600 | 8 | 16 | 23 |\\n| 800 | 11 | 17 | 26 |\\n| 1000 | 11 | 19 | 28 |\\n| 1200 | 11 | 20 | 29 |\\n| 1400 | 12 | 21 | 30 |\\n| 1600 | 13 | 22 | 32 |\\n| 1800 | 13 | 22 | 33 |\\n| 2000 | 14 | 23 | 35 |\"},{\"panel_id\":\"b\",\"text\":\"| Ar+ Ion Impacts | 20 eV (F Fraction Removed) | 30 eV (F Fraction Removed) | 40 eV (F Fraction Removed) |\\n|---|---|---|---|\\n| 0 | 0.00 | 0.00 | 0.00 |\\n| 200 | 0.05 | 0.28 | 0.30 |\\n| 400 | 0.20 | 0.33 | 0.37 |\\n| 600 | 0.24 | 0.38 | 0.43 |\\n| 800 | 0.24 | 0.44 | 0.48 |\\n| 1000 | 0.24 | 0.45 | 0.50 |\\n| 1200 | 0.27 | 0.47 | 0.50 |\\n| 1400 | 0.27 | 0.48 | 0.51 |\\n| 1600 | 0.30 | 0.48 | 0.51 |\\n| 1800 | 0.30 | 0.48 | 0.51 |\\n| 2000 | 0.30 | 0.48 | 0.51 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 20 eV, once the readily accessible surface F is consumed or reacted, the remaining F is either too deep in the substrate or bonded too strongly to participate in reactive ion etching. The Ar⁺ ions lack sufficient energy to access this buried F or to physically sputter Si without chemical assistance.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They are correlated: higher F removal corresponds to higher Si sputtering, since F enables reactive ion etching of Si.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 20 eV, where Si sputtering virtually stops after the initial etching phase.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Below 30 eV.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_13.jpg","caption":"FIG. 13. F density as a function of sample height in the Si sample with the fluorocarbon overlayer (10 eV $\\mathrm{CF}_2^+$ , 300 impacts). Results have been plotted for the initial sample and after 300 and $600\\mathrm{Ar^{+}}$ ion impacts. $\\mathrm{Ar^{+}}$ ion energies are (a) 20 and (b) $40\\mathrm{eV}$ .","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_13","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_13","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_13.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":466,"height":647,"image_format":"jpeg","image_sha256":"93eaba24cd9b7da4709664b94ff843fd7929fd321150b3252315ca8b5e60b2ff","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":309,"width":465,"height":338},{"panel_id":"a","x":0,"y":2,"width":462,"height":294}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"F density versus height at 10 eV for 100, 300, and 600 CF₂⁺ impacts. The F layer is narrow (~5 Å) and remains at a fixed position, indicating minimal substrate disturbance.\"},{\"panel_id\":\"b\",\"text\":\"F density at 30 eV. The profile is much broader, and the peak shifts to lower heights with increasing impacts, indicating that Si etching occurs simultaneously with passivation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Height h (Å) | 0 impacts (Atoms/ų) | 300 impacts (Atoms/ų) | 1000 impacts (Atoms/ų) |\\n|---|---|---|---|\\n| 25 | 0.000 | 0.000 | 0.001 |\\n| 28 | 0.000 | 0.000 | 0.005 |\\n| 30 | 0.000 | 0.000 | 0.012 |\\n| 32 | 0.000 | 0.002 | 0.015 |\\n| 34 | 0.000 | 0.005 | 0.015 |\\n| 36 | 0.005 | 0.015 | 0.018 |\\n| 38 | 0.045 | 0.028 | 0.022 |\\n| 39 | 0.058 | 0.030 | 0.025 |\\n| 40 | 0.025 | 0.015 | 0.010 |\"},{\"panel_id\":\"b\",\"text\":\"| Height h (Å) | 0 impacts (Atoms/ų) | 300 impacts (Atoms/ų) | 1000 impacts (Atoms/ų) |\\n|---|---|---|---|\\n| 20 | 0.000 | 0.000 | 0.000 |\\n| 25 | 0.000 | 0.002 | 0.002 |\\n| 28 | 0.000 | 0.008 | 0.004 |\\n| 30 | 0.000 | 0.010 | 0.006 |\\n| 33 | 0.000 | 0.003 | 0.004 |\\n| 36 | 0.005 | 0.005 | 0.002 |\\n| 39 | 0.058 | 0.008 | 0.001 |\\n| 41 | 0.005 | 0.002 | 0.000 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 40 eV, the CF₂⁺ ions have enough energy to etch the underlying Si while depositing the fluorocarbon layer. As Si is removed, the surface recedes and the F-containing layer moves downward. At 10 eV, the ion energy is too low for significant etching, so the passivation layer remains at a fixed position.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 5 Å.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The local atomic number density of fluorine at each height in the sample.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Below 30 eV, ideally around 10–20 eV.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_2.jpg","caption":"FIG. 2. F and C atoms in the $\\mathrm{SiO}_2$ sample as a function of the number of $20\\mathrm{eV}\\mathrm{CF}_2^+$ ion impacts.","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_2","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":469,"height":361,"image_format":"jpeg","image_sha256":"a1081e44a4a1bb8cb04840e1b3f8d4981ce7aab3da18a40b6f5a67149c84a4fa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":466,"height":356}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Number of F and C atoms in the SiO₂ sample versus CF₂⁺ ion impacts at 20 eV. F accumulates to ~100 atoms and saturates after ~250 impacts, while C remains low (~15 atoms), producing a strongly F-rich passivation layer.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of CF2+ Ion Impacts | F (Number of Atoms) | C (Number of Atoms) |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 25 | 18 | 5 |\\n| 50 | 32 | 8 |\\n| 75 | 42 | 10 |\\n| 100 | 52 | 11 |\\n| 125 | 62 | 12 |\\n| 150 | 72 | 13 |\\n| 175 | 85 | 13 |\\n| 200 | 88 | 15 |\\n| 225 | 90 | 16 |\\n| 250 | 98 | 15 |\\n| 275 | 102 | 15 |\\n| 300 | 98 | 14 |\\n| 350 | 96 | 12 |\\n| 400 | 94 | 10 |\\n| 450 | 105 | 11 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 6–7 (F ~ 100, C ~ 15), indicating a strongly F-rich film.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At energies above 10 eV, carbon is sputtered more easily from the surface than fluorine because the F–Si bond is stronger than the C–Si bond. This preferential C removal results in a passivation layer enriched in fluorine.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 250 CF₂⁺ ion impacts.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the composition has already saturated.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_4.jpg","caption":"FIG. 4. (Color online) The $\\mathrm{SiO}_2$ sample after (a) 200 and (b) 400 impacts of $20\\mathrm{eV}\\mathrm{CF}_3^+$ ions. FIG. 5. F and C atoms in the $\\mathrm{SiO}_2$ sample as a function of the number of $20\\mathrm{eV}\\mathrm{CF}_3^+$ ion impacts.","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_4","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":475,"height":367,"image_format":"jpeg","image_sha256":"83864f52ce6c1e0b81296bbc6d71c9a26096786c43361f7f0c7d6021e7a8bd73","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":5,"width":474,"height":360}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Number of F and C atoms in the SiO₂ sample versus CF₃⁺ ion impacts at 20 eV. F reaches ~75 atoms at steady-state while C remains extremely low (~5 atoms). Compared to CF₂⁺, saturation takes longer (~400 impacts) and the film contains less of both species.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of CF3+ Ion Impacts | F (Number of Atoms) | C (Number of Atoms) |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 50 | 14 | 3 |\\n| 100 | 25 | 4 |\\n| 150 | 32 | 3 |\\n| 200 | 48 | 3 |\\n| 250 | 50 | 4 |\\n| 300 | 55 | 4 |\\n| 350 | 68 | 5 |\\n| 400 | 75 | 5 |\\n| 450 | 75 | 5 |\\n| 500 | 76 | 5 |\\n| 550 | 75 | 5 |\\n| 600 | 70 | 5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"CF₃⁺ yields ~75 F atoms versus ~100 F atoms for CF₂⁺, resulting in a thinner passivation layer.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 20 eV, a larger fraction of CF₃⁺ ions reflect from the surface without reacting. This occurs because CF₃⁺ has fewer carbon dangling bonds available for bonding, and the accumulating F at the surface terminates available sites, making the ions less reactive.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"CF₃⁺ has only one C atom per three F atoms, and C is preferentially sputtered at 20 eV.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"CF₂⁺.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_6.jpg","caption":"FIG. 6. Effect of $\\mathrm{Ar^{+}}$ ion energy on the number of Si and O atoms sputtered from the $\\mathrm{SiO}_2$ sample with a fluorocarbon overlayer grown using $\\mathrm{CF}_3^+$ ions (400 impacts).","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_6","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":464,"height":667,"image_format":"jpeg","image_sha256":"20fdf0fe3c67964dc054e72f9b66a1e28865452d05bf3bae6c578b9d65b62b10","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":3,"y":0,"width":458,"height":311},{"panel_id":"a","x":0,"y":312,"width":460,"height":349}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the number of sputtered Si atoms as a function of the number of Ar⁺ ion impacts at different energies (50 eV, 40 eV, and 20 eV). The data points form step-like curves indicating cumulative counts.\"},{\"panel_id\":\"b\",\"text\":\"The chart shows the number of sputtered O atoms as a function of the number of Ar⁺ ion impacts at different energies (50 eV, 40 eV, and 20 eV). The data points form step-like curves indicating cumulative counts\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Ar+ Ion Impacts | 20 eV (Sputtered Si Atoms) | 40 eV (Sputtered Si Atoms) | 50 eV (Sputtered Si Atoms) |\\n|---|---|---|---|\\n| 0 | 0 | 0 | 0 |\\n| 50 | 2 | 4 | 7 |\\n| 100 | 4 | 6 | 8 |\\n| 200 | 5 | 7 | 12 |\\n| 300 | 9 | 8 | 14 |\\n| 400 | 9 | 13 | 16 |\\n| 500 | 9 | 13 | 16 |\\n| 600 | 9 | 13 | 16 |\\n| 700 | 9 | 13 | 17 |\\n| 800 | 9 | 13 | 18 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Ar+ Ion Impacts | 20 eV (Sputtered O Atoms) | 40 eV (Sputtered O Atoms) | 50 eV (Sputtered O Atoms) |\\n|---|---|---|---|\\n| 0 | 0 | 0 | 0 |\\n| 100 | 2 | 15 | 25 |\\n| 200 | 5 | 30 | 45 |\\n| 300 | 8 | 42 | 60 |\\n| 400 | 10 | 62 | 70 |\\n| 500 | 11 | 63 | 78 |\\n| 600 | 12 | 65 | 85 |\\n| 700 | 13 | 72 | 100 |\\n| 800 | 14 | 73 | 115 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In crystalline SiO₂, each Si atom is bonded to four O atoms (~16.8 eV total to liberate), while each O atom is bonded to only two Si atoms (~8.4 eV). This lower energy requirement allows O atoms to continue exiting the material even after Si sputtering has ceased.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The surface becomes oxygen-deficient due to preferential O sputtering.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 50 eV, Si continues to etch even after F is depleted.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, Si sputtering plateaus at 40 eV, indicating self-limiting behavior.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_7.jpg","caption":"FIG. 7. Effect of $\\mathrm{Ar^{+}}$ ion impact on $\\mathrm{F}$ density in the $\\mathrm{SiO}_2$ sample with a fluorocarbon overlayer grown using $\\mathrm{CF}_3^+$ ions (400 impacts). Results have been plotted for (a) $20\\mathrm{eV}$ and (b) $50\\mathrm{eV}$ $\\mathrm{Ar^{+}}$ ion energies.","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_7","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":505,"height":689,"image_format":"jpeg","image_sha256":"20ba83eb64cc07dd29215a09296925ab2b08b8ce863507ba0a8c30b30be1209b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":2,"y":1,"width":499,"height":312},{"panel_id":"a","x":0,"y":321,"width":501,"height":367}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the F density (Atoms/ų) at different heights (Å) for an initial sample and after 200 and 400 Ar⁺ impacts at 20 eV.\"},{\"panel_id\":\"b\",\"text\":\"The line chart shows the F density (Atoms/ų) at different heights (Å) for an initial sample and after 200 and 400 Ar⁺ impacts at 50 eV\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Height h (Å) | Initial sample (Atoms/ų) | 200 Ar+ Impacts (Atoms/ų) | 400 Ar+ Impacts (Atoms/ų) |\\n|---|---|---|---|\\n| 16 | 0.000 | 0.000 | 0.001 |\\n| 18 | 0.000 | 0.000 | 0.003 |\\n| 20 | 0.000 | 0.005 | 0.006 |\\n| 21 | 0.000 | 0.009 | 0.008 |\\n| 22 | 0.003 | 0.010 | 0.012 |\\n| 23 | 0.010 | 0.012 | 0.010 |\\n| 24 | 0.019 | 0.016 | 0.009 |\\n| 25 | 0.019 | 0.015 | 0.010 |\\n| 26 | 0.019 | 0.015 | 0.010 |\\n| 27 | 0.020 | 0.012 | 0.008 |\\n| 28 | 0.021 | 0.009 | 0.004 |\"},{\"panel_id\":\"b\",\"text\":\"| Height h (Å) | Initial sample (Atoms/ų) | 200 Ar+ Impacts (Atoms/ų) | 400 Ar+ Impacts (Atoms/ų) |\\n|---|---|---|---|\\n| 12 | 0.000 | 0.000 | 0.002 |\\n| 14 | 0.000 | 0.000 | 0.005 |\\n| 16 | 0.000 | 0.002 | 0.002 |\\n| 18 | 0.000 | 0.008 | 0.004 |\\n| 20 | 0.000 | 0.010 | 0.007 |\\n| 22 | 0.004 | 0.006 | 0.005 |\\n| 24 | 0.019 | 0.008 | 0.002 |\\n| 26 | 0.019 | 0.004 | 0.002 |\\n| 28 | 0.021 | 0.004 | 0.002 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 20 eV, F atoms are removed from the surface but the distribution remains narrow and localized. At 50 eV, higher energy ions push F atoms deeper into the SiO₂ bulk, causing the profile to broaden significantly. This buried F becomes less accessible for reactive ion etching.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 15 Å (spanning from h ≈ 10 to h ≈ 25 Å).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Buried F becomes inaccessible to incoming Ar⁺ ions and cannot participate in reactive etching of Si.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"20 eV.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_22_fig_5.jpg","caption":"FIG. 5. \"Saturation curves\" showing self-limiting removal in (a) ALE for small EPC, (b) ALE for larger EPC, and (c) ALE quasi-self-limiting. In curve (d), continuous etching is shown for comparable etch time to illustrate lack of self-limiting behavior.","id":"validation/atomic-layer-etching/simulation-usecase/22/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/22/fig_5","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/Review Paper -- Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":606,"height":483,"image_format":"jpeg","image_sha256":"a61b4b6ec13ff5f94c337e5be9b3838183e52f52f9b6596518f274329c239344","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":600,"height":475}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_22_fig_7.jpg","caption":"FIG. 7. Plasma-assisted silicon ALE, after etching $50\\mathrm{nm}$ directionally. The results show characteristic ALE benefits at all length scales: (a) excellent depth uniformity across the wafer, (b) flat silicon etch front on the feature, and (c) smooth surface. Reprinted with permission from Kanarik et al., Solid State Technol., 56, 24 (2013). Copyright 2013, Lam Research Corporation.","id":"validation/atomic-layer-etching/simulation-usecase/22/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/22/fig_7","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/Review Paper -- Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":667,"height":850,"image_format":"jpeg","image_sha256":"cb5679997f0ab6b07f4d9720c6a84b5c2c1aa3102fedbff576ab1d7c6e1349a6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":21,"y":529,"width":640,"height":314},{"panel_id":"b","x":480,"y":1,"width":182,"height":442},{"panel_id":"a","x":1,"y":2,"width":467,"height":504}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_10.jpg","caption":"Figure 10. Change in the Gibbs free energy with temperature for various fluorination ALEt-half-reactions.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_10","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_10","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":450,"height":402,"image_format":"jpeg","image_sha256":"2ade554f342ae7820fa7dcbf7505fb3f2d556526207865adf31292110bda4af0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":450,"height":402}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the change in Gibbs free energy (ΔG) for various reactions (R2-R6) of different surface states with NbF5 at different temperatures. In these models, '0%-slab' denotes a bare Al2O3 surface, while '100%F-slab' and '100%Cl-slab' represent surfaces fully terminated with fluorine or chlorine atoms, respectively.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| temperature [°C] | R2: Al₂O₃ → AlF₃ + NbOF₃ | R3: 0%-slab → 100%F-slab + NbOF₃ | R4: 100%-slab → 166%-F-slab + NbOF₃ | R5: 100%-Cl-slab → 166%-F-slab + NbClF₄ + NbOF₃ | R6: 100%-Cl-slab → 100%-F-slab + NbClF₃ |\\n|---|---|---|---|---|---|\\n| 100 | -48 | -48 | -23 | -80 | -100 |\\n| 300 | -58 | -58 | -33 | -100 | -122 |\\n| 600 | -71 | -71 | -47 | -135 | -165 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"R6.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"R4, R2,R3, R5, R6\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"All of them.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The fully chlorinated surface (100%-Cl-slab) is the most reactive (the most negative ΔG).\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_11.jpg","caption":"Figure 11. Change in the Gibbs free energy with temperature for possible chlorination or halide-exchange reactions.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_11","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_11","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_11.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":455,"height":408,"image_format":"jpeg","image_sha256":"d4c7977a10babfcbaa86ea2932231de80a8ec34c27c75408719a67da7f70983f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":455,"height":408}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the change in Gibbs free energy (ΔG) for various reactions (R8-R14) of different surface states with CCl4 at different temperatures. In these models, '0%-slab' denotes a bare Al2O3 surface, while '100%F-slab' and '100%Cl-slab' represent surfaces fully terminated with fluorine or chlorine atoms, respectively.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| temperature [°C] | R8: Al₂O₃(s) → AlCl₃ + COCl₂ | R9: 0%·slab → 100%Cl-slab + COCl₂ | R10: 100%F-slab → 100%Cl-slab + CFCl₃ | R11: 100%F-slab → 66%Cl-slab + CFCl₃ + AlCl₃ | R12: 166%F-slab → 100%Cl-slab + CFCl₃ + AlCl₃ | R13: 100%F-slab → 0%·slab + CFCl₃ + AlCl₃ | R14: 166%F-slab → 0%·slab + CFCl₃ + AlCl₃ |\\n|---|---|---|---|---|---|---|---|\\n| 100 | -74 | -49 | 50 | 30 | 23 | -4 | -10 |\\n| 300 | -72 | -49 | 43 | 6 | -3 | -56 | -63 |\\n| 600 | -62| -40 | 26 | -31 | -43 | -136 | -143 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"R10.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Unmodified Al2O3 surface.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The over-fluorinated surface (166%F-slab).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_3.jpg","caption":"Figure 3. $\\mathrm{AlF}_x[\\mathrm{O}]$ film thickness vs variation in total $\\mathrm{NbF}_5$ exposure time at 400 and $460^{\\circ}\\mathrm{C}$ . The total $\\mathrm{NbF}_5$ exposure time is calculated by multiplying the $\\mathrm{NbF}_5$ pulse time by the total number of cycles. The $\\mathrm{NbF}_5$ pulse times of 4.5 and $3\\mathrm{~s~}$ were used at 400 and $460^{\\circ}\\mathrm{C}$ , respectively. Each $\\mathrm{NbF}_5$ pulse was separated by a $6\\mathrm{~s~}$ long $\\mathrm{N}_2$ purge step.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_3","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_3","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":453,"height":408,"image_format":"jpeg","image_sha256":"9b180d95ce06b33f80b0f88bc177d9abb51164a233503914cf0c8bf8481d73e4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":453,"height":408}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_5.jpg","caption":"Figure 5. Change in EPC with etch temperature for the $\\mathrm{NbF}_5$ and $\\mathrm{CCl_4}$ cyclic etching process and compared to no-etching by $\\mathrm{CCl_4}$ only. A total of 150 etch cycles were performed per data point. The EPC at etch temperatures below $380^{\\circ}\\mathrm{C}$ stayed zero for both curves.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_5","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_5","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":450,"height":416,"image_format":"jpeg","image_sha256":"996c38210411cad693bdf29a2e2d81872a311f54ffe7caac1fbef68dd40b98e3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":450,"height":416}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between etch temperature and etch per cycle for two different sequences: NbF5 + CCl4 (3/6/3/6s) and CCl4 (3/6s). CCl4 alone produces no etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| etch temperature [°C] | NbF5 + CCl4 (3/6/3/6s): etch per cycle [A/Cycle] |CCl4 (3/6s): etch per cycle [A/Cycle] |\\n|---|---|---|\\n| 380 | 0.03 | -0.07 |\\n| 400 | 0.225 | -0.06 |\\n| 460 | 1.45 | -0.06 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. An ALE window would look like a plateau, where the EPC remains roughly constant across wide range of temperatures. Here, the EPC rises continiously.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"CCl4 sequence (9 seconds vs. 18 seconds in NbF5/CCl4 sequence).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Wihtout NbF5 step, no etching occurs.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Highly sensitive (EPC jumps from 0.2 Å/Cycle at 400 °C to 1.45 Å/Cycle at 460 °C)\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_7.jpg","caption":"Figure 7. XPS depth profile of $\\mathrm{Al}_2\\mathrm{O}_3$ exposed to $\\mathrm{NbF}_5$ for a total of 450 s at $460^{\\circ}\\mathrm{C}$ . The atomic percentage of elements found in the converted film is plotted with respect to the sputter time.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_7","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_7","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":455,"height":400,"image_format":"jpeg","image_sha256":"de8969511b855ad04294f71e93c9040a774c2105769ced81ca3f2864b3096689","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":455,"height":400}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the XPS depth profile of various species (C 1s, O 1s, F 1s, Al 2p, Nb 3d), shown as at.% against sputter time. It reveals a high surface fluorine concentration that gradually decreases with sputter time, while the oxygen signal significantly increases deep into the film. The aluminum content rises slightly and niobium remains low.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| sputter time [min] | atomic % | Species |\\n|---|---|---|\\n| 0,00 | 49,27 | F1s |\\n| 0,26 | 56,54 | F1s |\\n| 0,51 | 53,77 | F1s |\\n| 1,02 | 46,38 | F1s |\\n| 1,53 | 36,81 | F1s |\\n| 2,00 | 26,08 | F1s |\\n| 2,78 | 12,69 | F1s |\\n| 3,51 | 5,88 | F1s |\\n| 4,26 | 2,88 | F1s |\\n| 5,00 | 1,96 | F1s |\\n| 0,02 | 14,65 | O1s |\\n| 0,26 | 16,85 | O1s |\\n| 0,52 | 19,96 | O1s |\\n| 1,01 | 25,96 | O1s |\\n| 1,50 | 34,15 | O1s |\\n| 2,00 | 44,08 | O1s |\\n| 2,75 | 54,46 | O1s |\\n| 3,49 | 59,77 | O1s |\\n| 4,26 | 62,08 | O1s |\\n| 4,99 | 61,50 | O1s |\\n| 0,02 | 19,62 | Al2p |\\n| 0,27 | 23,42 | Al2p |\\n| 0,52 | 24,35 | Al2p |\\n| 1,01 | 25,85 | Al2p |\\n| 1,53 | 27,58 | Al2p |\\n| 2,01 | 29,65 | Al2p |\\n| 2,79 | 31,96 | Al2p |\\n| 3,52 | 33,69 | Al2p |\\n| 4,26 | 33,81 | Al2p |\\n| 4,99 | 32,31 | Al2p |\\n| 0,02 | 14,77 | C1s |\\n| 0,25 | 2,19 | C1s |\\n| 0,51 | 1,62 | C1s |\\n| 1,01 | 1,50 | C1s |\\n| 1,51 | 0,92 | C1s |\\n| 2,01 | 0,12 | C1s |\\n| 2,75 | 0,46 | C1s |\\n| 3,49 | 0,23 | C1s |\\n| 4,23 | 0,23 | C1s |\\n| 5,02 | 0,12 | C1s |\\n| 0,01 | 1,38 | Nb 3d |\\n| 0,27 | 1,15 | Nb 3d |\\n| 0,51 | 0,92 | Nb 3d |\\n| 1,01 | 0,69 | Nb 3d |\\n| 1,51 | 0,92 | Nb 3d |\\n| 2,00 | 0,69 | Nb 3d |\\n| 2,75 | 0,58 | Nb 3d |\\n| 3,52 | 0,46 | Nb 3d |\\n| 4,28 | 0,12 | Nb 3d |\\n| 4,99 | 0,12 | Nb 3d |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Fluorine\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Oxygen.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In the bulk.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The fluorination extends significantly deep into the film. Even after 3-4 minutes of sputtering, F signal is still detectable. Since sputtering removes material over time, the persisiting signal indicates that the fluorination happens not only on the surface.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_8.jpg","caption":"Figure 8. XPS depth profile of the remaining $\\mathrm{Al}_2\\mathrm{O}_3$ after removing about $18\\mathrm{nm}$ film by the $\\mathrm{NbF}_5$ and $\\mathrm{CCl}_4$ ALEt process. A zoomed picture at the top right corner focuses on Nb, F, and Cl signals.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_8","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_8","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":456,"height":406,"image_format":"jpeg","image_sha256":"1243d3a67f6216b59fde08dbbb3994295e6b82e80b6d396cfd7003a404fb1910","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":456,"height":406}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A chart showing the XPS elemental depth profile (at.% agains sputter time) of C, O, Al, Nb and Cl on the Al2O3 surface after approx. 18 nm were removed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| sputter time [min] | atomic % | species |\\n|---|---|---|\\n| 0.0 | 26.4 | C1s |\\n| 0.3 | 0.4 | C1s |\\n| 0.5 | 0.2 | C1s |\\n| 1.0 | 0.0 | C1s |\\n| 1.5 | 0.4 | C1s |\\n| 2.0 | 0.0 | C1s |\\n| 2.8 | 0.2 | C1s |\\n| 0.0 | 26.4 | F1s |\\n| 0.2 | 1.4 | F1s |\\n| 0.5 | 0.2 | F1s |\\n| 1.0 | 0.5 | F1s |\\n| 1.5 | 0.4 | F1s |\\n| 2.0 | 0.5 | F1s |\\n| 2.8 | 0.2 | F1s |\\n| 0.0 | 26.4 | Nb 3d |\\n| 0.3 | 0.3 | Nb 3d |\\n| 0.5 | 0.2 | Nb 3d |\\n| 1.0 | 0.5 | Nb 3d |\\n| 1.5 | 0.4 | Nb 3d |\\n| 2.0 | 0.5 | Nb 3d |\\n| 2.8 | 0.2 | Nb 3d |\\n| 0.0 | 24.6 | Al 2p |\\n| 0.2 | 34.6 | Al 2p |\\n| 0.5 | 34.9 | Al 2p |\\n| 1.0 | 35.0 | Al 2p |\\n| 1.5 | 35.4 | Al 2p |\\n| 2.0 | 35.2 | Al 2p |\\n| 2.4 | 35.2 | Al 2p |\\n| 2.7 | 35.1 | Al 2p |\\n| 0.0 | 41.9 | O1s |\\n| 0.2 | 63.6 | O1s |\\n| 0.5 | 64.1 | O1s |\\n| 1.0 | 64.8 | O1s |\\n| 1.5 | 64.8 | O1s |\\n| 2.0 | 64.3 | O1s |\\n| 2.8 | 64.7 | O1s |\\n| 0.0 | 0.0 | Cl 2p |\\n| 0.3 | 0.0 | Cl 2p |\\n| 0.5 | 0.3 | Cl 2p |\\n| 1.0 | 0.0 | Cl 2p |\\n| 1.5 | 0.0 | Cl 2p |\\n| 2.0 | 0.0 | Cl 2p |\\n| 2.8 | 0.0 | Cl 2p |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the etching process leaves minimal precursor contamination on the remaining surface. The XPS depth profile demonstrates that residues of Niobium and Chlorine are negligible. It is indicating that the volatile reaction products or unreacted precursors were successfully removed.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Oxygen\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Oxygen\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The removal is not compelte, a thin residual fluorinated layer persists on the surface.\"}]}]"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig_10.jpg","caption":"FIG. 10. (Color online) The raw SE data (experimental) and the fit (simulated by Lorentz model) for $\\Delta$ and $\\Psi$ are shown as a function of photon energy for $\\mathrm{Ga}_2\\mathrm{O}_3$ thin film deposited by PEALD at $200^{\\circ}\\mathrm{C}$ and annealed at the temperature of $500^{\\circ}\\mathrm{C}$ .","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig_10","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig_10","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line charts represents the experimental Spectroscopic ellipsometry (SE) measurements of ψ against photon energy and fitted (simulated by Lorentz model) for various angles (65°, 70°, 75°)\"},{\"panel_id\":\"b\",\"text\":\"The multiple line charts represents the experimental Spectroscopic ellipsometry (SE) measurements of Δ against photon energy and fitted (simulated by Lorentz model) for various angles (65°, 70°, 75°), the angles were represented in different symbols and fitted line is in red for ψ and green for Δ.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Photon Energy (eV) | ψ (degrees) | Experimental ψ (degrees) |\\n|--------------------|-------------|---------------------------|\\n| 1.5 | 26.97 | 65 |\\n| 1.5 | 24.24 | 70 |\\n| 1.5 | 23.21 | 75 |\\n| 2.0 | 36.48 | 65 |\\n| 2.0 | 33.23 | 70 |\\n| 2.0 | 32.83 | 75 |\\n| 2.5 | 52.22 | 65 |\\n| 2.5 | 50.01 | 70 |\\n| 2.5 | 47.55 | 75 |\\n| 3.0 | 61.21 | 65 |\\n| 3.0 | 59.27 | 70 |\\n| 3.0 | 52.11 | 75 |\\n| 3.5 | 37.53 | 65 |\\n| 3.5 | 35.04 | 70 |\\n| 3.5 | 35.96 | 75 |\\n| 4.0 | 31.29 | 65 |\\n| 4.0 | 30.10 | 70 |\\n| 4.0 | 28.50 | 75 |\"},{\"panel_id\":\"b\",\"text\":\"| Photon Energy (eV) | Δ (degrees) | Experimental Δ (degrees) |\\n|--------------------|-------------|---------------------------|\\n| 1.5 | 52.45 | 65 |\\n| 1.5 | 74.23 | 70 |\\n| 1.5 | 94.95 | 75 |\\n| 2.0 | 44.08 | 65 |\\n| 2.0 | 60.44 | 70 |\\n| 2.0 | 77.54 | 75 |\\n| 2.5 | 29.22 | 65 |\\n| 2.5 | 38.28 | 70 |\\n| 2.5 | 52.07 | 75 |\\n| 3.0 | 29.91 | 65 |\\n| 3.0 | 45.89 | 70 |\\n| 3.0 | 59.69 | 75 |\\n| 3.5 | 63.37 | 65 |\\n| 3.5 | 82.97 | 70 |\\n| 3.5 | 103.00 | 75 |\\n| 4.0 | 93.52 | 65 |\\n| 4.0 | 117.11 | 70 |\\n| 4.0 | 135.28 | 75 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Currently, the spectra in the 1.5–2.5 eV range are relatively smooth, indicating the film is likely thin enough that interference fringes are broad or minimal. If the thickness were doubled, the path length difference would increase, causing more rapid constructive and destructive interference. This would result in the appearance of distinct oscillatory fringes (waves) in both ψ and Δ within this transparent lower-energy region.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Acquire raw SE data (ψ and Δ spectra) at multiple angles.\\nConstruct an optical model stack (Substrate / Thin Film / Ambient).\\nSelect a dispersion relation (Lorentz oscillator) to parameterize the film's dielectric function.\\nPerform regression analysis (Levenberg-Marquardt) to minimize Mean Squared Error (MSE) between the model and experiment.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the Lorentz model is effective and the film structure is uniform.The fit is excellent across the entire spectral range and all three angles, as shown by the solid lines passing directly through the center of the symbols. This robust multi-angle agreement implies that the film is optically isotropic and homogeneous;\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The feature corresponds to an interband electronic transition or optical absorption edge.\"}]}]","bbox":[{"panel_id":"b","x":0,"y":284,"width":464,"height":332},{"panel_id":"a","x":2,"y":1,"width":464,"height":291}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":469,"height":619,"image_format":"jpeg","image_sha256":"3331d8eb4e816aeaa193a28c55ba6a53a06056de8971dc0219f44bdf6464b98a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig_11.jpg","caption":"FIG. 11. (Color online) Extracted refractive indices of $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ thin films deposited by PEALD at $200^{\\circ}\\mathrm{C}$ and annealed at various RTA temperatures by Lorentz simulation.","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig_11","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig_11","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line charts represents the variation of refractive index (n) of Ga₂O₃ thin films extracted from Lorentz simulation against photon energy (eV) for different thermal treatments (As-deposit, 500°C, 700°C, and 900°C). The refractive index clearly increases with increasing photon energy.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Photon Energy (eV) | Refractive Index (n) | Condition |\\n|--------------------|-----------------------|----------------|\\n| 1.5 | 1.82 | As-deposit |\\n| 1.5 | 1.83 | 500 |\\n| 1.5 | 1.92 | 700 |\\n| 1.5 | 1.92 | 900 |\\n| 2.0 | 1.85 | As-deposit |\\n| 2.0 | 1.86 | 500 |\\n| 2.0 | 1.94 | 700 |\\n| 2.0 | 1.95 | 900 |\\n| 2.5 | 1.89 | As-deposit |\\n| 2.5 | 1.90 | 500 |\\n| 2.5 | 1.99 | 700 |\\n| 2.5 | 1.98 | 900 |\\n| 3.0 | 1.95 | As-deposit |\\n| 3.0 | 1.96 | 500 |\\n| 3.0 | 2.04 | 700 |\\n| 3.0 | 2.04 | 900 |\\n| 3.5 | 2.03 | As-deposit |\\n| 3.5 | 2.03 | 500 |\\n| 3.5 | 2.11 | 700 |\\n| 3.5 | 2.10 | 900 |\\n| 4.0 | 2.14 | As-deposit |\\n| 4.0 | 2.15 | 500 |\\n| 4.0 | 2.20 | 700 |\\n| 4.0 | 2.19 | 900 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"As deposited\\n, 500 °C\\n, 700 °C\\n, 900 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 900°C annealing route is invalid due to the temperature constraint. The trade-off is clear: higher annealing temperatures (700°C, 900°C) provide a higher refractive index (better for index contrast) but require a high thermal budget that may damage underlying layers or substrates. The lower-temperature or as-deposited films offer lower thermal budget but also lower refractive index and likely poorer film quality.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the annealing temperature generally increases the refractive index. This is because higher temperature annealing promotes densification and enhanced crystallinity, reducing porosity and increasing the atomic packing density. A denser material with fewer voids has a higher polarizability, leading to a higher refractive index.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A higher refractive index implies that the annealed Ga₂O₃ film provides a stronger optical confinement (a larger index contrast with the substrate or cladding). This allows for the design of thinner waveguide cores while still effectively confining the light mode, enabling more compact integrated photonic devices compared to using the lower-index, as-deposited film.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":3,"width":474,"height":340}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_11.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":478,"height":344,"image_format":"jpeg","image_sha256":"44c2ad8fcb39788dffc32da54917829b0452b8c3b0810e31b912292167c2f955","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig_3.jpg","caption":"FIG. 3. (Color online) Auger depth profile of as-deposited $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ thin film. The analysis was done by using $4\\mathrm{keV}$ As-ions. The nominal steh rate was $0.2\\mathrm{\\AA / s}$ . The film is homogeneous and stoichiometric.","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig_3","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple-line chart shows the Auger depth profile of the as-deposited Ga₂O₃ films as a function of sputter time. Si corresponds to the substrate, and small traces of carbon are also detected. Clear and well-defined Ga and O intensitites are observed throughout the profile.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sputter time (a.u.) | O intensity (%) | Ga intensity (%) | Si intensity (%) | C intensity (%) |\\n|---------------------|-----------------|------------------|------------------|-----------------|\\n| 0 | 53 | 35 | 0 | 2 |\\n| 1 | 53 | 34 | 0 | 2 |\\n| 2 | 52 | 33 | 0 | 2 |\\n| 3 | 52 | 33 | 0 | 2 |\\n| 4 | 51 | 32 | 1 | 2 |\\n| 5 | 50 | 31 | 3 | 2 |\\n| 6 | 47 | 29 | 8 | 2 |\\n| 7 | 40 | 25 | 25 | 2 |\\n| 8 | 25 | 15 | 60 | 1 |\\n| 9 | 5 | 2 | 90 | 0 |\\n| 10 | 0 | 0 | 93 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Surface/Bulk Ga₂O₃ Film (High O and Ga signal).Interface Region - Crossover of signals.Silicon Substrate - High Si signal.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"AES with High-Energy Ions: Pro: Faster sputtering. Con: Can cause more atomic mixing and roughening, distorting depth resolution.\\n\\nXPS with Low-Energy Ions: Pro: Better depth resolution and more accurate quantification of light elements due to gentler sputtering.\\n\\nChoice: For accurate light-element quantification with minimal distortion, XPS with low-energy ions is preferable. The trade-off is slower data acquisition, but it preserves interfacial sharpness for more reliable profiling.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The observed O/Ga intensity ratio is approximately 1.6 (54%/32%), close to the theoretical stoichiometric ratio of 1.5.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"NO , While the sharp interface and low bulk carbon are positive, the as-deposited film likely has a high density of point defects and disorder (as suggested by the lower refractive index in the previous figure). These defects would act as charge traps, leading to poor channel mobility and unstable threshold voltage in a HEMT. Post-deposition annealing is typically required to reduce these defects and improve dielectric quality.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":477,"height":340}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":478,"height":342,"image_format":"jpeg","image_sha256":"3cd3ced76aa6f00931fedefe20ab7296a671d8c8692bc3ed2a07c0ec5c8194d0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig_6.jpg","caption":"FIG. 6. (Color online) Leakage current curves of the $\\mathrm{Pt / Ga}_{2}\\mathrm{O}_{3} / \\mathrm{Si}$ structured thin films.","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig_6","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The muliple line chart shows the current density (A/cm²) as a function of gate voltage (V) for Ga₂O₃-based devices subjected to different post-deposition annealing temperatures: As-grown,500 °C,700 °C,900 °C. As-grown and 500 °C samples show higher current density, especially near 0 to –4 V, indicating higher leakage current. As annealing temperature increases to 700 °C and 900 °C, the current density decreases significantly, showing improved insulating behavior and lower leakage.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gate Voltage (V) | Current Density (A/cm²) | temperature |\\n|---|---|---|\\n| 0 | 10^-7 | As-grown |\\n| 0 | 10^-8 | 500 °C |\\n| 0 | 10^-7 | 700 °C |\\n| 0 | 10^-8 | 900 °C |\\n|-3 | 10^-2 | As-grown |\\n|-3 | 10^-3 | 500 °C |\\n|-3 | 10^-7 | 700 °C |\\n|-3 | 10^-7 | 900 °C |\\n|-6 | 10^-2 | As-grown |\\n|-6 | 10^-2 | 500 °C |\\n|-6 | 10^-7 | 700 °C |\\n|-6 | 10^-7 | 900 °C |\\n|-9 | - | As-grown |\\n|-9 | - | 500 °C |\\n|-9 | 10^-6 | 700 °C |\\n|-9 | 10^-7 | 900 °C |\\n| -12| - | As-grown |\\n| -12| - | 500 °C |\\n| -12| 10^-5 | 700 °C |\\n| -12| 10^-6 | 900 °C |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"As-grown\\n\\n, 500 °C\\n\\n, 700 °C\\n\\n, 900 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As-grown and 500 °C samples show higher current density, especially near 0 to –4 V, indicating higher leakage current.As annealing temperature increases to 700 °C and 900 °C, the current density decreases significantly, showing improved insulating behavior and lower leakage.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As-grown and 500 °C samples show higher current density, particularly between 0 and –4 V, indicating increased leakage current. In contrast, annealing at 700 °C and 900 °C significantly reduces the current density, with the 900 °C sample exhibiting the lowest leakage (≈10⁻⁹ A/cm²) due to improved oxide quality and defect reduction. Overall, higher annealing temperatures enhance dielectric stability, reduce defects, and improve the insulating behavior and performance of the films.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A 900°C annealed film would be essential as a gate oxide in a high-performance transistor. Its ultra-low leakage current (~10⁻⁹ A/cm²) minimizes static power consumption and prevents unwanted signal loss. The as-grown film's higher leakage would cause excessive power dissipation and unreliable switching, rendering it unsuitable for modern low-power electronics.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":471,"height":461}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":475,"height":464,"image_format":"jpeg","image_sha256":"a632d466c875f1de4050cadb0737ce7b5c430f2f2b4607613609b1ac56806832","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig_8.jpg","caption":"FIG. 8. (Color online) Transmission spectra of as-deposited $\\mathrm{Ga}_2\\mathrm{O}_3$ thin film and of those annealed at various RTA temperatures. The inset is the bandgap energies of the thin films.","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig_8","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The main figure displays the optical transmission spectra of Ga2O3 thin films as a function of wavelength for various annealing temperatures (As-deposited, 500°C, 700°C, and 900°C). The data reveals a noticeable \\\"blue shift\\\" of the absorption edge toward shorter wavelengths as the temperature increases, indicating an increase in transparency at the UV edge.\"},{\"panel_id\":\"b\",\"text\":\"The inset figure plots the extracted optical band gap energy (Eg) against the annealing temperature. The trend confirms a significant widening of the band gap, increasing from approximately 5.00 eV for the as-deposited sample to nearly 5.25 eV for the sample annealed at 900°C, likely due to improved crystallinity.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | Transmission (%) | Condition |\\n|------------------|-------------------|----------------|\\n| 200 | 20 | As-deposited |\\n| 200 | 20 | 500°C |\\n| 200 | 20 | 700°C |\\n| 200 | 20 | 900°C |\\n| 250 | 40 | As-deposited |\\n| 250 | 40 | 500°C |\\n| 250 | 40 | 700°C |\\n| 250 | 40 | 900°C |\\n| 300 | 60 | As-deposited |\\n| 300 | 60 | 500°C |\\n| 300 | 60 | 700°C |\\n| 300 | 60 | 900°C |\\n| 350 | 80 | As-deposited |\\n| 350 | 80 | 500°C |\\n| 350 | 80 | 700°C |\\n| 350 | 80 | 900°C |\\n| 400 | 100 | As-deposited |\\n| 400 | 100 | 500°C |\\n| 400 | 100 | 700°C |\\n| 400 | 100 | 900°C |\\n| 450 | 100 | As-deposited |\\n| 450 | 100 | 500°C |\\n| 450 | 100 | 700°C |\\n| 450 | 100 | 900°C |\\n| 500 | 100 | As-deposited |\\n| 500 | 100 | 500°C |\\n| 500 | 100 | 700°C |\\n| 500 | 100 | 900°C |\\n| 550 | 100 | As-deposited |\\n| 550 | 100 | 500°C |\\n| 550 | 100 | 700°C |\\n| 550 | 100 | 900°C |\\n| 600 | 100 | As-deposited |\\n| 600 | 100 | 500°C |\\n| 600 | 100 | 700°C |\\n| 600 | 100 | 900°C |\\n| 650 | 100 | As-deposited |\\n| 650 | 100 | 500°C |\\n| 650 | 100 | 700°C |\\n| 650 | 100 | 900°C |\\n| 700 | 100 | As-deposited |\\n| 700 | 100 | 500°C |\\n| 700 | 100 | 700°C |\\n| 700 | 100 | 900°C |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | Band Gap Energy (eV) |\\n|------------------|----------------------|\\n| 200 | 5.0 |\\n| 400 | 5.1 |\\n| 600 | 5.2 |\\n|800 | 5.26 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The most significant change occurs between 500°C and 700°C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The band gap decreases as temperature increases. This is primarily caused by thermal lattice expansion, which increases the interatomic spacing and reduces the potential felt by electrons, lowering the energy required for electronic transitions. Additionally, increased electron-phonon interactions at higher temperatures contribute to this band gap narrowing.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Transmission spectroscopy is more practical for high-throughput screening. While photoreflectance can offer more precise determination of critical points in the dielectric function, transmission measurement is experimentally simpler, faster, and requires less complex sample preparation (e.g., no need for a Schottky contact), allowing for rapid collection of data across many samples and temperatures.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No.\\n\\nThe strong temperature-dependent band gap shift means the LED's emitted UV wavelength would change significantly with operating temperature, leading to unstable output color and intensity. For a temperature-stable device, a material with a smaller temperature coefficient of the band gap (dEg/dT) is required to minimize this performance drift.\"}]}]","bbox":[{"panel_id":"b","x":240,"y":101,"width":230,"height":185},{"panel_id":"a","x":3,"y":9,"width":476,"height":340}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":480,"height":350,"image_format":"jpeg","image_sha256":"f1dec3055cf59460d8b74f946508431aa31e12e9a91704004af1f6a5ae018792","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_46_fig4.jpg","caption":"FIG.4.a $CV(100\\mathrm{kHz})$ curves and inset $JV$ same legend) for nominal 3, 9,and $15\\mathrm{nm}$ thick ALD $\\mathrm{HfO_2}$ layers on $50^{\\circ}\\mathrm{C}$ in situ passivated InGaAs. The actual $\\mathrm{HfO_2}$ and IL) thicknesses from TEM were $3\\mathrm{nm}$ $0.8\\mathrm{nm}$ IL), $9.4~\\mathrm{nm}$ $0.8~\\mathrm{nm}$ IL),and $16.8~\\mathrm{nm}$ $0.9 \\mathrm{nm}$ IL).No significant degradation of the bulk and interface properties is observed after repeated $CV$ measurement of the MOS structures. (b) $CV$ $\\mathrm{(H_2KHz)}$ and inset $JV$ same legend) characteristics for in situ $50^{\\circ}\\mathrm{C}$ $\\mathrm{H}_2\\mathrm{S}$ passivated and ex situ aqueous $(\\mathrm{NH_4})_2\\mathrm{S}$ passivated devices.","id":"validation/atomic-layer-deposition/experimental-usecase/46/fig4","sample_id":"atomic-layer-deposition/experimental-usecase/46/fig4","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the capacitance (C) as a function of gate bias (Vg) for different film thicknesses of HfO2 gate dielectric layer (3nm, 9.4nm, 16.8nm). The channel layer is passivated in situ at 50°C. The inset shows the current density (J) as a function of gate bias.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the capacitance (C) as a function of gate bias (Vg) for two different passivations, ex-situ ((NH4)2S and in situ H2S) at 50°C. The inset shows the current density (J) as a function of gate bias.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gate Bias Vg (V) | 3 nm | 9.4 nm | 16.8 nm |\\n|-----------------------------|--------|--------|---------|\\n| -2 | 0.003 | 0.0025 | 0.002 |\\n| -1 | 0.004 | 0.003 | 0.0022 |\\n| -0.5 | 0.005 | 0.004 | 0.0025 |\\n| 0 | 0.006 | 0.005 | 0.003 |\\n| 0.5 | 0.008 | 0.0065 | 0.004 |\\n| 1 | 0.010 | 0.008 | 0.005 |\\n| 1.5 | 0.0115 | 0.0095 | 0.006 |\\n| 2 | 0.0125 | 0.0105 | 0.007 |\\n| 2.5 | 0.013 | 0.0115 | 0.0078 |\\n| 3 | 0.0135 | 0.012 | 0.0085 |\"},{\"panel_id\":\"b\",\"text\":\"| Gate Bias Vg (V) | (NH4)2S | 50°C H2S |\\n|-----------------------------|-------------------------------|----------------------|\\n| -2 | 0.003 | 0.0028 |\\n| -1 | 0.004 | 0.0035 |\\n| -0.5 | 0.005 | 0.0045 |\\n| 0 | 0.006 | 0.0055 |\\n| 0.5 | 0.0075 | 0.0068 |\\n| 1 | 0.0085 | 0.0078 |\\n| 1.5 | 0.009 | 0.0085 |\\n| 2 | 0.0095 | 0.009 |\\n| 2.5 | 0.0098 | 0.0095 |\\n| 3 | 0.010 | 0.0098 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"VFB (Flat-Band Voltage) is the applied gate voltage where the semiconductor's energy bands are flat (no bending), indicating zero net charge in the semiconductor. In figure b, flat band voltages would be approximately -2 to -1\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Although a slight Vfb shift is apparent, a similar profile is observed in the CV curves of both devices. Both devices have a similar Cmax in accumulation while the in situ passivated device appears to have slightly higher interface state density. The JV plot in the inset of (b) shows similar leakage current density at 1 V with a higher electric breakdown field for the in situ passivated device. This demonstrates that the in situ passivation approach employed in this work can achieve results comparable to those obtained using ex situ aqueous (NH4)2S passivation.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The leakage current densities at 1 V are\\n1. For the 3 nm device, ~2x10^−6 A/cm2\\n2. For the 9.4 nm device, ~3x10^−8 A/cm2 \\n3. For the 16.8nm device, ~2x10^−8 A/cm2\"}]}]","bbox":[{"panel_id":"a","x":8,"y":0,"width":470,"height":280},{"panel_id":"b","x":8,"y":304,"width":470,"height":315}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/images/fig4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/OaConnor et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":478,"height":619,"image_format":"jpeg","image_sha256":"1dc8375d331c395ff01011ca1528dfb50c881a2bb640a01ff49eb277b214dfa5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_46_fig_2.jpg","caption":"FIG. 2. (a) High frequency $(100\\mathrm{kHz})$ capacitance-voltage characteristics and inset leakage current density as a function of gate bias (same legend), for unpassivated and in situ passivated $\\mathrm{Pd / 9nm}$ nominal ALD $\\mathrm{HfO_2 / InGaAs / InP}$ MOS devices. (b) Multiple frequency $CV$ , and inset hysteresis, curves for in situ $50^{\\circ}\\mathrm{C}$ $\\mathrm{H}_2\\mathrm{S}$ passivated InGaAs MOS device. No capacitance correction was made for inductive and resistive elements in the circuit. The average frequency dispersion of the flatband capacitance $C_{\\mathrm{fb}}$ , is $< 3.5\\%$ per decade for all devices. The hysteresis measured around $C_{\\mathrm{fb}}$ at $100\\mathrm{kHz}$ was $460\\mathrm{mV}$ for the unpassivated device, and 380, 585, and $410\\mathrm{mV}$ for the 50, 200, and $350^{\\circ}\\mathrm{C}$ in situ $\\mathrm{H}_2\\mathrm{S}$ passivated devices, respectively.","id":"validation/atomic-layer-deposition/experimental-usecase/46/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/46/fig_2","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the capacitance (C) of a device as a function of gate bias (Vg) at various temperatures of hydrogen sulfide (H2S) passivation ( 50 °C, 200 °C and 350 °C) along with unpassivated sample for comparison. The inset provides a closer view of the current density (J) against gate bias.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the capacitance (C) of a device as a function of gate bias (Vg) at different frequencies (1 kHz, 10 kHz, 100 kHz, 1 MHz) for the 50 °C H2S passivated sample. The inset provides a closer view of the capacitance at 100 kHz.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gate Bias Vg (V) | Unpassivated | 350°C H2S | 200°C H2S | 50°C H2S |\\n|-----------------------------|--------------|-----------------------|-----------------------|----------------------|\\n| -2 | 0.0028 | 0.0026 | 0.0024 | 0.0022 |\\n| -1 | 0.003 | 0.0028 | 0.0026 | 0.0024 |\\n| 0 | 0.005 | 0.004 | 0.004 | 0.0038 |\\n| 1 | 0.006 | 0.0068 | 0.0058 | 0.0080 |\\n| 2 | 0.0072 | 0.0074 | 0.0062 | 0.0090 |\\n| 3 | 0.0078 | 0.0080 | 0.0070 | 0.0010 |\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"No the inset shows only the minimum hysteresis observed for 50 °C device. The hysteresis measured around Cfb at 100 kHz is as follows, \\n1. 460 mV for the unpassivated device\\n2. 380 mV for the 50 °C in situ H2S passivated device\\n3. 585 mV for the 200 °C in situ H2S passivated device\\n4. 410 mV for the 350 °C in situ H2S passivated device\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The fact that the 50 °C passivated device, which XPS showed to have no detectable S signal at the surface, displays the best electrical properties is further evidence that S is not the primary passivating element for the in situ process. It is possible to speculate that hydrogen may be passivating the InGaAs surface. One possibility is low temperature dissociative adsorption of H2S to produce H–S and H species which may bond to As at the epitaxial layer surface.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The minimum capacitance Cmin, at Vg =−2 V, \\n1. Unpassivated sample = 0.0028 F/m2 \\n2. Passivated at 350 °C = 0.0026 F/m2 \\n3. Passivated at 200 °C = 0.0024 F/m2 \\n4. Passivated at 50 °C= 0.0022 F/m2\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The in situ passivated surface at 50 °C device displays the highest maximum capacitance ( accumulation Cmax) and also exhibits the sharpest transition from minimum (depletion to accumulation).\"}]}]","bbox":[{"panel_id":"b","x":2,"y":409,"width":646,"height":400},{"panel_id":"a","x":0,"y":0,"width":646,"height":402}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/OaConnor et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":648,"height":811,"image_format":"jpeg","image_sha256":"80529c3f4d8692be3265326a9c06b8426f2c99a4dc43214473f19677f5af1892","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_47_fig_2.jpg","caption":"Fig. 2. Thermogravimetric analysis of $\\mathrm{Al(DEA)}_3$ and $\\mathrm{Al(DIA)}_3$ at atmospheric pressure and $50~\\mathrm{cc / min}$ He purge gas at a $10^{\\circ}\\mathrm{C / min}$ heating rate.","id":"validation/atomic-layer-deposition/experimental-usecase/47/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/47/fig_2","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the weight percentage (Wt %) of Al (DEA)_3 and Al (DIA)_3, as a function of temperature. Both compounds exhibit a sharp decrease in weight percentage starting around 200°C, with Al (DEA)_3 having a slightly higher initial weight percentage.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature | Al (DEA)_3 | Al (DIA)_3 |\\n|---|---|---|\\n| 0 | 100 | 100 |\\n| 100 | 100 | 100 |\\n| 200 | 95 | 55 |\\n| 300 | 12 | 15 |\\n| 400 | 10 | 12 |\\n| 500 | 10 | 10 |\\n| 600 | 10 | 10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows a thermogravimetric analysis of Al(DEA)3 and Al(DIA)3 with the atomic percentage plotted as a function of temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Al(DEA)3 evaporates at approximately 200 °C, while Al(DIA)3 evaporates at 150 °C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 200°C, the atomic percentage of Al(DEA)3 is nearly 100%.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It reveals information about the thermal stability of compounds.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":1,"width":651,"height":410}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/Wade et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":653,"height":414,"image_format":"jpeg","image_sha256":"56c17698cc108dbcc87271d4b777d972fe3f73d06018318652aaa7e1501ec290","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG7_a.jpg","caption":"","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG7_a","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG7_a","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure compares optical transmittance spectra of bare glass and NiO films deposited using different precursors over the 300–1000 nm wavelength range. All NiO-coated samples show reduced transmittance relative to bare glass, particularly in the near-UV region. Among the NiO films, the Bu-MeAMD-derived film consistently exhibits the highest transmittance, followed by the MeCp-based film, while the Alanis-based film shows the lowest transmittance across most of the visible range. The spectra flatten at longer wavelengths, indicating relatively stable optical behavior in the visible to near-infrared region.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | Glass (%) | NiO_Alanis (%) | NiO_MeCp (%) | NiO_Bu-MeAMD (%) |\\n|-----------------|-----------|----------------|--------------|------------------|\\n| 300 | ~12 | ~10 | ~10 | ~10 |\\n| 350 | ~88 | ~70 | ~78 | ~85 |\\n| 400 | ~90 | ~75 | ~82 | ~88 |\\n| 450 | ~92 | ~78 | ~85 | ~90 |\\n| 500 | ~93 | ~80 | ~86 | ~91 |\\n| 600 | ~92 | ~81 | ~87 | ~92 |\\n| 700 | ~91 | ~80 | ~86 | ~91 |\\n| 800 | ~90 | ~80 | ~85 | ~90 |\\n| 900 | ~89 | ~81 | ~85 | ~89 |\\n| 1000 | ~88 | ~82 | ~86 | ~90 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Bu-MeAMD shows the highest transmittance, followed by MeCp, with Alanis consistently lowest.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Higher transmittance can result from lower defect density, reduced absorption centers, or differences in film thickness and density. The Bu-MeAMD process may produce a more uniform film or fewer optically active defects, allowing greater light transmission.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Film thickness\\n-Surface roughness\\n-Grain size and microstructure\\n-Defect and impurity concentration\\n-Precursor chemistry and reaction completeness\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":645,"height":510}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG7_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG7_a.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"not_found"},"width":650,"height":517,"image_format":"jpeg","image_sha256":"bd26072982d5f249b27835311020db0c942f5a990bada92cda9613fb65470dd4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG7_b.jpg","caption":"(b)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG7_b","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG7_b","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares the optical absorption coefficients of NiO films deposited using three different precursors. All films show strong absorption in the UV region followed by a gradual decrease toward the visible and near-infrared. Across the full wavelength range, NiO_Alanis exhibits the highest absorption, NiO_MeCp shows intermediate behavior, and NiO_Bu-MeAMD displays the weakest absorption. The systematic separation between the curves indicates that precursor chemistry influences film density, defect concentration, or electronic structure, which in turn affects optical absorption.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | NiO_Alanis (cm⁻¹) | NiO_MeCp (cm⁻¹) | NiO_Bu-MeAMD (cm⁻¹) |\\n|---|---|---|---|\\n| 300 | ~3.5×10⁵ | ~3.0×10⁵ | ~1.5×10⁵ |\\n| 350 | ~1.2×10⁵ | ~8×10⁴ | 0 |\\n| 400 | ~1.1×10⁵ | ~7×10⁴ | 0 |\\n| 500 | ~1.0×10⁵ | ~6×10⁴ | 0 |\\n| 700 | ~8×10⁴ | ~5×10⁴ | 0 |\\n| 1000| ~6×10⁴ | ~4×10⁴ | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At shorter wavelengths, photons have enough energy to excite electronic transitions across the band gap or defect states, leading to strong absorption. As the wavelength increases, photon energy decreases, and fewer transitions are available, so absorption gradually weakens.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"NiO_Alanis shows the highest absorption across the full wavelength range.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lower absorption may indicate a lower defect density, reduced free-carrier concentration, or differences in film density and microstructure. These factors depend strongly on precursor chemistry and growth conditions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Optical absorption directly affects transparency, photoconductivity, and light–matter interaction. Choosing a film with the appropriate absorption profile is essential for applications such as transparent electronics, sensors, or photovoltaic interfaces.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":0,"width":689,"height":519}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG7_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG7_b.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":692,"height":523,"image_format":"jpeg","image_sha256":"a7c53832a255dd405a17f9fbd659617e057d13c5eb841946f30c2c5ab1d562c3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_24_fig_10.jpg","caption":"Fig. 10. Comparison of reaction energetics for $\\mathrm{H}_2\\mathrm{O}$ reaction on the (A) $\\mathrm{SiO}_2\\mathrm{-O - ZrCl}_3$ surface site, (B) $\\mathrm{Zr - O - ZrCl}_3^*$ surface site, and (C) $\\mathrm{Si - O - ZrCl}_3$ surface site.","id":"validation/atomic-layer-deposition/simulation-usecase/24/fig_10","sample_id":"atomic-layer-deposition/simulation-usecase/24/fig_10","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the energy change (ΔE) in kcal/mol for different during the reaction of water with different substrates (A, B, and C).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction part | delta E, A |delta E, B |delta E, C |\\n| --- | --- | --- | --- |\\n|Start|0|0|0|\\n|Complex|-17|-15|-17|\\n| TS | 3 | 4 | 4 |\\n| HCl(a) | -5 | -2 | 0 |\\n| HCl(g) | 0 | 3 | 3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reaction that costs the least energy is pathway B, this shows the least negative delta E.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is clear that also the substrate matters. This seems to suggest that there is also an interaction of either the silicon or the zirconium with the HCl.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"That there is no energy gain by reaction as well as no energy loss.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The lowest recorded delta E is -17 kcal/mol.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":6,"width":589,"height":262}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/Joseph H. Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":591,"height":270,"image_format":"jpeg","image_sha256":"89f782b57ec44fd2fbed19bf6c5a4bc83592b4409097b6f4f43dbf414011b901","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_24_fig_4.jpg","caption":"Fig. 4. PESs of $\\mathrm{H}_2\\mathrm{O}$ reaction with all three Cl atoms on $\\mathrm{Zr}$ , calculated using the $\\mathrm{Si(OH)_3SiOZrCl_3}$ cluster for (A) removal of the first Cl atom, (B) removal of the second Cl atom, and (C) removal of the third Cl atom.","id":"validation/atomic-layer-deposition/simulation-usecase/24/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/24/fig_4","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart illustrates the change in energy (ΔE) in kcal/mol for different steps in the reaction of chlorine groups at the surface with water, for the first (A), second (B), and third (C) chlorine group at the surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔE (kcal/mol) A |ΔE (kcal/mol) B |ΔE (kcal/mol) C |\\n|---|---|---|---|\\n| Start | 0 |0 |0 |\\n| Complex | -18|-17|-15|\\n| TS | 4|4|0|\\n| HCl (a) | -1|-3|-2|\\n| HCl (g)| 0.5|5|7|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The third chlorine group, this can be seen by the fact that this reaction has the lowest energy barrier.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This depends on which chlorine group has been removed. For the last chlorine group, more energy is required to have a transision of HCl (a) to HCl (g).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The energy barrier is 21 kcal/mol.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes this can be said, as the energy envolved decreases, for increasing number of removed chlorine groups.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":6,"width":790,"height":282}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/Joseph H. Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":795,"height":292,"image_format":"jpeg","image_sha256":"820bb17c2f96183f20362e52c74fa77862e6e7a290b15bedbdee74eae34b75bb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_24_fig_8.jpg","caption":"Fig. 8. PESs calculated using the $\\mathrm{(SiH_3O)_3SiOZrCl_3}$ cluster for reaction of (A) removal of the first Cl atom, (B) removal of the second Cl atom, and (C) removal of the third Cl atom.","id":"validation/atomic-layer-deposition/simulation-usecase/24/fig_8","sample_id":"atomic-layer-deposition/simulation-usecase/24/fig_8","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the energy (E) in kcal/mol during the reaction step where a chlorine group reacts with water, for either the first (A), the second (B), or the third (C) chlorine group.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔE (kcal/mol) A |ΔE (kcal/mol) B |ΔE (kcal/mol) C |\\n|---|---|---|---|\\n| Start | 0 |0 |0 |\\n| Complex | -17|-15|-15|\\n| TS |3|3|3|\\n| HCl (a) | -1| 0|2|\\n| HCl (g)| 2| 5|8|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The second and third chlorine atoms are equally easy to be removed as they have the same activation energy, which is lower than the one of the first chlorine atom.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"19 kcal/mol\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"59 kcal/mol\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The precursor only adsorbs to hydroxyl groups so at least one is required. More is better as this will lead to higher quality films.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":7,"width":586,"height":243}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/Joseph H. Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":589,"height":250,"image_format":"jpeg","image_sha256":"e0e4aeeed4b48e8c6543940611c51394ace87398314016b2646c4ef3a82d90ce","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_24_fig_9.jpg","caption":"Fig. 9. Comparison of reaction energetics for $\\mathrm{ZrCl_4}$ reaction on the (A) $\\mathrm{SiO_2 - OH^*}$ surface site, (B) $\\mathrm{Zr - OH^*}$ surface site, and (C) $\\mathrm{Si - OH^*}$ surface site.","id":"validation/atomic-layer-deposition/simulation-usecase/24/fig_9","sample_id":"atomic-layer-deposition/simulation-usecase/24/fig_9","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the energy change (ΔE) in kcal/mol for the reaction of ZrCl4 with different substrate complexes labeled A, B, and C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔE (kcal/mol) A |ΔE (kcal/mol) B |ΔE (kcal/mol) C |\\n|---|---|---|---|\\n| Start | 0 |0 |0 |\\n| Complex | -17|-21|-28|\\n| TS | 0| -2|-8|\\n| HCl (g)| -5| -7|-12|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes there is faster saturation as there is less energy required for adsorption on SiO2 than on ZrO2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"SiO2 instead of Si or ZrO2 as this material shows the lowest activation energy.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"21 kcal/mol\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"C\"}]}]","bbox":[{"panel_id":"a","x":1,"y":4,"width":588,"height":274}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/Joseph H. Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":592,"height":280,"image_format":"jpeg","image_sha256":"c7d2ca4f8b1a268570ae87e0e671233a0af7684e998f14bdf12bc187c33471c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_15_fig_5.jpg","caption":"FIG. 5. \"Saturation curves\" showing self-limiting removal in (a) ALE for small EPC, (b) ALE for larger EPC, and (c) ALE quasi-self-limiting. In curve (d), continuous etching is shown for comparable etch time to illustrate lack of self-limiting behavior.","id":"validation/atomic-layer-etching/experimental-usecase/15/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/15/fig_5","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":0,"width":601,"height":479}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":606,"height":483,"image_format":"jpeg","image_sha256":"a61b4b6ec13ff5f94c337e5be9b3838183e52f52f9b6596518f274329c239344","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_15_fig_7.jpg","caption":"FIG. 7. Plasma-assisted silicon ALE, after etching $50\\mathrm{nm}$ directionally. The results show characteristic ALE benefits at all length scales: (a) excellent depth uniformity across the wafer, (b) flat silicon etch front on the feature, and (c) smooth surface. Reprinted with permission from Kanarik et al., Solid State Technol., 56, 24 (2013). Copyright 2013, Lam Research Corporation.","id":"validation/atomic-layer-etching/experimental-usecase/15/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/15/fig_7","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"c","x":44,"y":534,"width":615,"height":309},{"panel_id":"b","x":478,"y":4,"width":187,"height":453},{"panel_id":"a","x":2,"y":2,"width":462,"height":502}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":667,"height":850,"image_format":"jpeg","image_sha256":"cb5679997f0ab6b07f4d9720c6a84b5c2c1aa3102fedbff576ab1d7c6e1349a6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_19_fig10.jpg","caption":"Fig.10. Selective etching of TiN at $250^{\\circ}C$ using $\\mathrm{O_3}$ and HF in the presence of other surrounding materials of $\\mathrm{Al}_2\\mathrm{O}_3$ $\\mathrm{HfO_2}$ $\\mathrm{ZrO_2}$ $\\mathrm{SiO_2}$ and $\\mathrm{Si_3N_4}$ . Reproduced from Ref. [20].","id":"validation/atomic-layer-etching/experimental-usecase/19/fig10","sample_id":"atomic-layer-etching/experimental-usecase/19/fig10","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the film thickness of various materials (TiN, Al₂O₃, Si₃N₄, HfO₂, ZrO₂, SiO₂) over cycles at 250°C using O₃ & HF.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | TiN | Al₂O₃ | Si₃N₄ | HfO₂ | ZrO₂ | SiO₂ |\\n|---|---|---|---|---|---|---|\\n| 0 | 75 | 40 | 40 | 55 | 55 | 55 |\\n| 100 | 60 | 40 | 40 | 55 | 55 | 55 |\\n| 200 | 45 | 40 | 40 | 55 | 55 | 55 |\\n| 300 | 30 | 40 | 40 | 55 | 55 | 55 |\\n| 400 | 15 | 40 | 40 | 55 | 55 | 55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Only TiN is etched; Al₂O₃, HfO₂, ZrO₂, SiO₂, and Si₃N₄ show negligible thickness change.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"These oxides form stable, nonvolatile fluorides (AlF₃, HfF₄, ZrF₄) when exposed to HF. Unlike TiN which forms volatile TiF₄, these metal fluorides remain on the surface and do not desorb, preventing net material removal in the oxidation-fluorination mechanism.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 0.20 Å/cycle, calculated from roughly 55 Å removal over about 300 cycles.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN is used as gate electrode material in CMOS and as a copper diffusion barrier, requiring selective removal without damaging surrounding dielectric materials.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":652,"height":511}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":652,"height":511,"image_format":"jpeg","image_sha256":"30b824cc47bb3f472f0ccb5c6cedc6da0e8b20b9130607dcb0269eeb0d02f82c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_19_fig_5.jpg","caption":"Fig. 5. Selective etching of $\\mathrm{Al_2O_3}$ , $\\mathrm{HfO_2}$ , $\\mathrm{ZrO_2}$ , $\\mathrm{SiO_2}$ , $\\mathrm{Si_3N_4}$ , and TiN by the metal ALE using fluorination and ligand-exchange reactions: (a) $\\mathrm{Sn(acac)}_2$ at $200^{\\circ}\\mathrm{C}$ and (b) TMA at $300^{\\circ}\\mathrm{C}$ . Reproduced from Ref. [29].","id":"validation/atomic-layer-etching/experimental-usecase/19/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/19/fig_5","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Shows film thickness versus ALE cycles using Sn(acac)₂ and HF at 200°C. Al₂O₃, HfO₂, and ZrO₂ show linear thickness decrease (etchable), while SiO₂, Si₃N₄, and TiN remain constant (not etchable), demonstrating material selectivity.\"},{\"panel_id\":\"b\",\"text\":\"Shows film thickness versus ALE cycles using TMA and HF at 300°C. Al₂O₃ and HfO₂ are etched, ZrO₂ shows slight etching, while SiO₂, Si₃N₄, and TiN are not etched, demonstrating different selectivity compared to Sn(acac)₂.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | TiN (Å) | SiO2 (Å) | HfO2 (Å) | Si3N4 (Å) | ZrO2 (Å) | Al2O3 (Å) |\\n|---|---|---|---|---|---|---|\\n| 0 | 68 | 49 | 52 | 39 | 48 | 47 |\\n| 50 | 70 | 48 | 52 | 40 | 47 | 35 |\\n| 100 | 69 | 47 | 50 | 40 | 42 | 23 |\\n| 200 | 69 | 47 | 45 | 40 | 28 | 0 |\\n| 400 | 69 | 46 | 33 | 39 | 0 | - |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Cycles | TiN (Å) | SiO2 (Å) | HfO2 (Å) | Si3N4 (Å) | ZrO2 (Å) | Al2O3 (Å) |\\n|---|---|---|---|---|---|---|\\n| 0 | 68 | 50 | 52 | 39 | 48 | 47 |\\n| 50 | - | 49 | 51 | - | 52 | 34 |\\n| 100 | - | 48 | 49 | - | 51 | 21 |\\n| 200 | - | - | 44 | - | 52 | 0 |\\n| 400 | 71 | 45 | 33 | 36 | 50 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"SiO₂ and Si₃N₄ resist etching because neither is spontaneously fluorinated by HF in the absence of water, and the Si-F bond is too strong to undergo effective ligand exchange reactions that would generate volatile Si-containing products.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN cannot be etched due to either the absence of stable/volatile Ti(III) reaction products or the difficulty of fluorinating Ti(IV) surface species using HF.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Linear thickness decrease indicates constant etch per cycle (EPC), confirming reproducible self-limiting etching behavior.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Al₂O₃ and HfO₂ can be etched by both; ZrO₂ is etched by Sn(acac)₂ but only slightly by TMA.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":4,"width":621,"height":467},{"panel_id":"b","x":628,"y":0,"width":577,"height":470}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":1208,"height":472,"image_format":"jpeg","image_sha256":"14a33fd792402c20fc731655ec88d855f475ca813b8fc61bc58cef54a8b1f9a9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_6.jpg","caption":"Figure 6. Expansion of first two ALE cycles in Figure 5 showing the individual mass changes during the sequential TMA and HF exposures at 250, 275, 300, and $325^{\\circ}C$ .","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_6","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 6 shows the mass changes during the first two Al₂O₃ ALE cycles at 250, 275, 300, and 325 °C. The first TMA exposure produces mass gains of 27–32 ng/cm², corresponding to the reaction of surface AlOH* with TMA. The subsequent HF exposure adds 33–36 ng/cm² due to the conversion of AlCH₃* species to AlF* and formation of an AlF₃ surface layer. Mass changes are nearly constant across the temperatures during these early cycles, and higher temperatures lead to slightly larger gains. The figure highlights the initial nucleation behavior and the temperature-dependent early-stage mass changes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | 250°C (ng/cm^2) | 275°C (ng/cm^2) | 300°C (ng/cm^2) | 325°C (ng/cm^2) |\\n|----------|-----------------|-----------------|-----------------|-----------------|\\n| 1 | ~25 | ~25 | ~25 | ~25 |\\n| 30 | ~65 | ~62 | ~60 | ~58 |\\n| 60 | ~68 | ~62 | ~64 | ~60 |\\n| 90 | ~60 | ~48 | ~40 | ~20 |\\n| 120 | ~70 | ~60 | ~58 | ~40 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 cycles of sequential TMA and HF dosing.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mass change increase until 60 s, and then it shows a decrease in its values.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"325 °C\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher temperatures result in a greater removal of AlF3 from the surface and greater fluorination of Al2O3.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"325 degrees results in a net decrease of around 20 nm/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, it seems as if the initial cycle is not temperature depentent. For all temperatures similar mass changes are recorded.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If a linear relation is expected between etch rate and temperature, the final mass change level of 300 degrees celcius should be lower (equally spaced between the level of 275 and 325 degrees celcius).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that there is net adsorption of TMA at the surface after which it starts etching as opposed to etching from the start.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It indicates that mass changes occur in discrete, repeatable steps within each cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"325 °C shows the largest overall mass swing within one cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF removes fluorinated surface species formed during TMA exposure, leading to controlled material removal and mass loss.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At lower temperatures, the final mass after each cycle remains higher than at elevated temperatures. This indicates smaller net mass loss over the same number of cycles. Such differences are relevant when comparing cumulative removal across temperatures.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The first HF exposure converts AlCH₃* species to AlF* via AlCH₃* + HF → AlF* + CH₄, and fluorinates the underlying Al₂O₃ through Al₂O₃ + 6HF → 2AlF₃ + 3H₂O. This spontaneous reaction (ΔG ≈ −50 kcal) creates the AlF₃ surface layer that TMA can subsequently remove through ligand-exchange, enabling cyclic etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mass loss begins during the second cycle at 275°C, 300°C, and 325°C, while 250°C requires a third cycle before etching onset.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The arrows mark the timing of sequential precursor exposures—blue arrows indicate TMA doses and red arrows indicate HF doses during the ALE cycles.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At higher temperatures, TMA removes a larger fraction of the AlF₃ surface layer through ligand-exchange reactions, producing more volatile AlF(CH₃)₂ products. The percentage of AlF₃ removed increases from 19% at 250°C to 74% at 325°C, explaining the pronounced mass loss at 325°C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Etching occurs at ~65 seconds (TMA pulse).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the final mass is effectively higher (or barely changed) compared to the start of the cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 250°C (Red), the mass drop is negligible, implying the thermal energy is insufficient to drive the ligand-exchange reaction between TMA and the fluorinated surface. In contrast, at 325°C (Green), the massive drop indicates the barrier has been overcome, enabling rapid and efficient volatilization. This strong temperature dependence confirms the process is kinetically controlled by a significant energy barrier.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ideally, an ALE step should be self-limiting, showing a sharp drop followed by a flat plateau (saturation). The slight continuous downward slope seen in the Green line (325°C) suggests a loss of self-limiting behavior, potentially due to thermal desorption of the film itself or a secondary CVD-like reaction. This instability makes precise depth control more difficult compared to the stable plateaus seen at intermediate temperatures (e.g., 300°C, Black line).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. The first TMA exposure displays mass gains of ΔMTMA = 27−32 ng/cm2 at 250−325 °C\\n2. The first HF exposure shows mass gains of ΔMHF = 33−36 ng/cm2 at 250−325 °C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The fluorination reaction Al2O3 + 6HF → 2AlF3 + 3H2Ois spontaneous over the temperature range from 250 to 325 °C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After the first HF exposure, the next TMA exposure removes the AlF3 layer on the Al2O3 substrate. Figure shows that mass losses during the TMA and HF cycles begin with the second TMA and HF cycle for temperatures from 275−325 °C. The\\nTMA and HF cycles at 250 °C show a mass loss after the third ALE cycle. The higher temperatures produce both a larger mass loss for the removal of AlF3 by TMA and a larger mass gain for the subsequent fluorination of Al2O3 by HF.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"250°C, 275°C, 300°C and 325°C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After 60 seconds, which corresponds to the beginning of the second ALE cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"These mass gains result from the reaction of AlOH* surface species with TMA according to AlOH* + Al(CH3)3 → AlOAl(CH3)2* + CH4.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After the first ALE cycle, the mass loss during TMA exposure increases with temperature (roughly from 10 ng/cm^2 to 40 ng/cm^2), whereas the mass gain during HF exposure remains constant around 35-38 ng/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The first TMA exposure causes a mass gain because TMA reacts with Al₂O₃ surface, leaving Al–CH₃–containing surface species. This methylation increases the measured mass. After HF converts the surface into an AlF₃-like fluorinated layer, TMA mainly acts as the etch step by reacting with that fluoride to form volatile AlF(CH₃)₂ that desorbs, producing the mass drop.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TMA exposure half-cycle shows the strongest temperature dependence. This is indicated by the increasing magnitude of the mass drop during TMA as temperature rises, meaning TMA removes a larger fraction of the fluorinated surface at higher temperature. By comparison, the HF step’s mass gain changes much less across the same temperature range, consistent with it reaching a self-limited endpoint under the pulse conditions used.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"250°C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing temperature reduces the net mass retained after each cycle. While all temperatures show stepwise increases during TMA exposure and decreases during HF exposure, the 325 °C trace exhibits significantly lower mass accumulation, indicating enhanced etching or reduced adsorption at higher temperature.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA exposures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"250 °C ,275 °C ,300 °C , 325 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Higher temperatures lead to slightly larger mass gains during both TMA and HF exposures, reflecting more efficient surface reactions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"TMA exposure: AlOH reacting with Al(CH₃)₃ → formation of AlOAl(CH₃)₂, HF exposure: AlCH₃ reacting with HF → formation of AlF and AlF₃ surface layer\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It helps determine the nucleation behavior, confirms self-limiting reactions, and allows estimation of the thickness of the AlF₃ surface layer, which is critical for precise etch depth control in ALE processes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The first TMA exposure reacts with surface AlOH* species, resulting in a mass gain of 27–32 ng/cm² depending on the temperature. The subsequent HF exposure converts AlCH₃* species to AlF* and forms an AlF₃ surface layer, producing an additional mass gain of 33–36 ng/cm². These sequential reactions illustrate the self-limiting and surface-specific nature of the ALE process during the early cycles.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":667,"height":533}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":667,"height":533,"image_format":"jpeg","image_sha256":"501eb812122ca55e07ac1c76e93ef9c9e643a54eea765cdd40dbe48b8f6145dd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_8.jpg","caption":"Figure 8. Temperature dependence of (a) $\\Delta M_{\\mathrm{TMA}}$ and $\\Delta M_{\\mathrm{HF}}$ and (b) MCPC for $\\mathrm{Al}_2\\mathrm{O}_3$ ALE.","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_8","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart shows how ΔM_TMA and ΔM_HF vary with temperature. As temperature increases, ΔM_TMA becomes more negative, indicating greater mass loss during TMA exposure, while ΔM_HF increases, indicating greater mass gain during HF exposure.\"},{\"panel_id\":\"b\",\"text\":\"The line chart shows MCPC as a function of temperature. MCPC decreases steadily with increasing temperature, indicating a larger net mass loss per cycle at higher temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | ΔM_TMA (ng/cm²·cycle) | ΔM_HF (ng/cm²·cycle) |\\n|------------------|------------------------|-----------------------|\\n| 250 | ~-15 | ~5 |\\n| 275 | ~-20 | ~10 |\\n| 300 | ~-30 | ~15 |\\n| 325 | ~-40 | ~20 |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | MCPC (ng/cm²·cycle) |\\n|------------------|---------------------|\\n| 250 | ~-10 |\\n| 275 | ~-15 |\\n| 300 | ~-20 |\\n| 325 | ~-25 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"250 °C\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, this is not given as at a certain point desorption can have a roll. Thereby eliminating the ALE mechanism.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For this MCPC 300 degrees celcius should be chosen as temperature.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It indicates a larger net mass loss per ALE cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Since the etch rate per cycle (MCPC) changes significantly with temperature, small variations in temperature across a wafer would lead to different amounts of material being removed. Therefore, precise and uniform temperature control is essential to achieve uniform etching depths and consistent device performance across the entire substrate.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 250°C, the MCPC is nearly zero, meaning the mass added by HF is almost exactly canceled by the mass removed by TMA, resulting in no net etch. The penalty is that the process effectively stops working as an etch; to remove any significant thickness, the cycle count would need to be prohibitively high, or the process would simply stagnate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the process is robust across this temperature range, with the opposing half-cycles compensating. A production tool can select a temperature based on throughput (higher T) or precision (lower T) without drastically altering the net etch depth per cycle, simplifying process window definition.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As ΔMTMA mass losses increase at higher temperatures compared to ΔMHF and the MCPC also decreases with increase in temperature, it can be concluded that the temperature dependence of ΔMTMA observed in graph a dominates the temperature dependence observed in the MCPC shown in graph b\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ΔMTMA/MCPC ratio for different temperatures are as follows\\n\\n1. 250 °C, 2.55\\n2. 275 °C, 1.94\\n3. 300 °C, 1.83\\n4. 325 °C, 1.81\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the change in mass loss during TMA exposure is larger than the mass gain during HF exposure, the MCPC decreases with temperature.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The temperature dependence of the mass change during TMA exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 325 °C, the MCPC point is below zero, which means the net mass change per cycle is negative. That implies the process is etch-dominated at this temperature. In other words, deposition during the HF half-cycle does not fully compensate the loss from the TMA half-cycle, so you get net etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"250 °C\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Low temperature → higher MCPC, Mid temperature → moderate MCPC, High temperature → lowest MCPC\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher temperature reduces surface reaction uptake and lowers mass change.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mass loss increases progressively with temperature after TMA exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TMA dose seems to be more temperature dependent as the curve has a higher absolute slope.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The MCPC can be caluclated by adding both the delta M of TMA and HF, which gives an MCPC of -20 ng/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ΔM_TMA and ΔM_HF change in opposite directions with increasing temperature. ΔM_TMA becomes more negative, indicating greater mass loss during the TMA step, while ΔM_HF becomes more positive, indicating greater mass gain during the HF step. Together, these opposing trends influence the net mass change per cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"325 °C yields the largest ΔM_HF value.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"250°C: 0.14 Å/cycle; 275°C: 0.34 Å/cycle; 300°C: 0.51 Å/cycle; 325°C: 0.75 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Higher temperatures enable TMA to remove a larger fraction of the AlF₃ surface layer during the ligand-exchange reaction. At 250°C, only ~19% of the AlF₃ layer is removed, while at 325°C, ~74% is removed. When more AlF₃ is removed, more fresh Al₂O₃ is exposed for fluorination in the subsequent HF step, leading to greater net material removal per cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Greater AlF₃ removal by TMA exposes more Al₂O₃ surface, which allows more fluorination (and thus larger mass gain) during the subsequent HF exposure.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It allows the etch rate to be tuned by adjusting process temperature, providing flexibility for different application requirements.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"HF acts as the surface modification agent, reacting with the oxide to form a solid fluoride layer (adding mass). TMA acts as the removal agent, reacting with that fluoride layer to form volatile species that leave the surface (removing mass). The cycle works because the mass removed by TMA is greater than the mass added by HF.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increase in (ΔM(HF) implies that at higher temperatures, fluorine penetrates deeper or saturates the surface more densely. This creates a larger reservoir of Al-F bonds available for the ligand-exchange reaction. Consequently, the TMA step consumes this thicker layer, resulting in a proportionally larger negative mass loss (ΔM(TMA)).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Followed same reaction sequence of 2−30−1−30 on initial Al2O3 substrates.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ΔMTMA shows progressively larger mass losses at higher temperatures. In contrast, ΔMHF reveals progressively larger mass gains at higher temperatures.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the temperature increases, the mass change during TMA exposure keeps decreasing linearly.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As temperature increases, the mass change during HF exposure keeps increasing linearly.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA half-cycle (|−40| > |+15|).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ΔM_TMA becomes increasingly negative with temperature, indicating greater mass loss during TMA exposure, while ΔM_HF increases, indicating greater mass gain during HF exposure. This suggests that both half-reactions become more pronounced at higher temperatures.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Temperature.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"250 °C, 275 °C, 300 °C, 325 °C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the temperature increases, both ΔMTMA and ΔMHF drop steadily, which shows that each reaction step contributes less mass compared with lower temperatures. This trend suggests reduced reaction uptake at elevated temperatures, which is typical when surface adsorption becomes less favorable in ALE conditions.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":665,"height":299},{"panel_id":"b","x":0,"y":303,"width":666,"height":375}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":670,"height":683,"image_format":"jpeg","image_sha256":"a72ece1df629144e60bf98d8d4389e6f8e4aded1ded57da16db6bc0fcfb2b5d9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_1.jpg","caption":"FIG. 1. (Color online) (a) Crystalline $\\mathrm{SiO}_2$ sample used for the molecular dynamics investigation in this article. (b) The $\\mathrm{SiO}_2$ sample after 100 impacts of $20\\mathrm{eV}\\mathrm{CF}_2^+$ ions. (c) The $\\mathrm{SiO}_2$ sample after 200 impacts of $20\\mathrm{eV}\\mathrm{CF}_2^+$ ions. FIG. 3. Fluorine concentration in the sample as a function of sample height for different numbers of $20\\mathrm{eV}\\mathrm{CF}_2^+$ ion impacts.","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_1","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the fraction of fluorine (F) as a function of height (h) in angstroms (Å). The chart includes three lines representing different impact scenarios: 100 impacts, 200 impacts, and 400 CF2+ impacts\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Height h (Å) | 100 impacts (%) | 200 impacts (%) | 400 impacts (%) |\\n|---|---|---|---|\\n| 18 | 0 | 0 | 0 |\\n| 20 | 0 | 0.5 | 2 |\\n| 21 | 1 | 3 | 7 |\\n| 22 | 3 | 7 | 12 |\\n| 23 | 5 | 11 | 22 |\\n| 24 | 8 | 15 | 32 |\\n| 25 | 18 | 30 | 48 |\\n| 26 | 35 | 52 | 60 |\\n| 27 | 60 | 62 | 63 |\\n| 28 | 78 | 58 | 65 |\\n| 29 | - | 67 | 68 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The F concentration increases and the profile broadens slightly as more ions impact the surface. However, the changes between 200 and 400 impacts are small, indicating the system approaches quasi-steady-state around 250 impacts. The passivation layer thickness remains approximately constant at ~8 Å.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around h = 18–20 Å.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The fluorocarbon passivation process is self-limiting. As F accumulates at the surface, available bonding sites become saturated and incoming CF₂⁺ ions increasingly reflect or sputter existing material rather than adding new F. This leads to a dynamic equilibrium where deposition and removal balance.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 8 Å.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":3,"width":471,"height":364}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":472,"height":369,"image_format":"jpeg","image_sha256":"ff2647a21c8494d674743a9c02d57afa93da2216e8ae8cae60c0082cc2716ce9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_10.jpg","caption":"FIG. 10. Number of $\\mathrm{F}$ and $\\mathrm{C}$ atoms in the Si sample after bombardment with $\\mathrm{CF}_2^+$ ions. Results have been plotted for (a) $10\\mathrm{eV}$ and (b) $20\\mathrm{eV}$ ion energies.","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_10","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the number of atoms (F and C) as a function of the number of CF₂⁺ ion impacts at 10 eV.\"},{\"panel_id\":\"b\",\"text\":\"The line chart shows the number of atoms (F and C) as a function of the number of CF₂⁺ ion impacts at 20 eV.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of CF2+ Ion Impacts | F (Number of Atoms) | C (Number of Atoms) |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 50 | 15 | 6 |\\n| 100 | 30 | 12 |\\n| 150 | 42 | 20 |\\n| 200 | 48 | 24 |\\n| 250 | 62 | 31 |\\n| 300 | 73 | 32 |\\n| 350 | 72 | 32 |\\n| 400 | 78 | 34 |\\n| 450 | 83 | 36 |\\n| 500 | 85 | 37 |\\n| 600 | 85 | 36 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of CF2+ Ion Impacts | F (Number of Atoms) | C (Number of Atoms) |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 50 | 25 | 8 |\\n| 100 | 45 | 10 |\\n| 150 | 56 | 12 |\\n| 200 | 63 | 11 |\\n| 250 | 68 | 11 |\\n| 300 | 62 | 9 |\\n| 350 | 72 | 10 |\\n| 400 | 80 | 10 |\\n| 450 | 80 | 8 |\\n| 500 | 78 | 8 |\\n| 550 | 70 | 6 |\\n| 600 | 71 | 5 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 10 eV, the film contains substantial carbon (C ~ 35–40 atoms at steady state) alongside fluorine. At 20 eV, carbon content drops to below 10 atoms while F remains around 75–80. This occurs because higher energy ions sputter C more efficiently, as F–Si bonds are stronger than C–Si bonds.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 450 CF₂⁺ ion impacts for both energies.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Because the F–Si bond is stronger than the C–Si bond.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10 eV.\"}]}]","bbox":[{"panel_id":"b","x":3,"y":303,"width":464,"height":356},{"panel_id":"a","x":2,"y":0,"width":460,"height":295}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":470,"height":664,"image_format":"jpeg","image_sha256":"a8d3d2aadc0e6afe9503e88c500bc265a9f43bc5978c3b27e21d4c5d68ebce6d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_11.jpg","caption":"FIG. 11. $\\mathrm{F}$ density as a function of sample height in the Si sample with the fluorocarbon overlayer. Results have been plotted for $100$ , $300$ , and $600\\mathrm{eV}$ ion impacts on the initial crystalline sample. $\\mathrm{CF}_2^+$ ion energies are (a) $10$ and (b) $30\\mathrm{eV}$ .","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_11","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_11","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"F density versus height at 10 eV for 100, 300, and 600 CF₂⁺ impacts. The F layer is narrow (~5 Å) and remains at a fixed position, indicating minimal substrate disturbance.\"},{\"panel_id\":\"b\",\"text\":\"F density at 30 eV. The profile is much broader, and the peak shifts to lower heights with increasing impacts, indicating that Si etching occurs simultaneously with passivation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Height h (Å) | 100 impacts (Atoms/ų) | 300 impacts (Atoms/ų) | 600 impacts (Atoms/ų) |\\n|---|---|---|---|\\n| 38 | 0.000 | 0.000 | 0.001 |\\n| 39 | 0.000 | 0.001 | 0.005 |\\n| 40 | 0.000 | 0.005 | 0.015 |\\n| 41 | 0.001 | 0.018 | 0.030 |\\n| 42 | 0.008 | 0.035 | 0.048 |\\n| 43 | 0.020 | 0.055 | 0.060 |\"},{\"panel_id\":\"b\",\"text\":\"| Height h (Å) | 100 impacts (Atoms/ų) | 300 impacts (Atoms/ų) | 600 impacts (Atoms/ų) |\\n|---|---|---|---|\\n| 28 | 0.000 | 0.000 | 0.000 |\\n| 30 | 0.000 | 0.000 | 0.005 |\\n| 31 | 0.000 | 0.002 | 0.025 |\\n| 32 | 0.000 | 0.005 | 0.038 |\\n| 33 | 0.000 | 0.015 | 0.025 |\\n| 34 | 0.001 | 0.028 | 0.010 |\\n| 35 | 0.003 | 0.033 | 0.002 |\\n| 36 | 0.008 | 0.022 | 0.001 |\\n| 37 | 0.018 | 0.010 | 0.000 |\\n| 38 | 0.024 | 0.005 | 0.000 |\\n| 39 | 0.018 | 0.002 | 0.000 |\\n| 40 | 0.012 | 0.000 | 0.000 |\\n| 42 | 0.005 | 0.000 | 0.000 |\\n| 44 | 0.001 | 0.000 | 0.000 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 30 eV, the CF₂⁺ ions have enough energy to etch the underlying Si while depositing the fluorocarbon layer. As Si is removed, the surface recedes and the F-containing layer moves downward. At 10 eV, the ion energy is too low for significant etching, so the passivation layer remains at a fixed position.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The local atomic number density of fluorine at each height in the sample.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 5 Å.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Below 30 eV, ideally around 10–20 eV.\"}]}]","bbox":[{"panel_id":"b","x":1,"y":306,"width":463,"height":347},{"panel_id":"a","x":3,"y":3,"width":459,"height":307}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_11.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":466,"height":653,"image_format":"jpeg","image_sha256":"9e4132c98cc864382b66eff673ab41ab3c2a923d3b8e08ba36c3e3d3a73e2856","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_12.jpg","caption":"FIG. 12. (a) Number of Si atoms that are sputtered from the Si sample with the fluorocarbon overlayer (10 eV $\\mathrm{CF}_2^+$ , 300 impacts) as $\\mathrm{Ar^{+}}$ ions of different energies are bombarded on it. (b) Fraction of initial F left in the sample as $\\mathrm{Ar^{+}}$ ions of different energies are bombarded on the Si sample with the fluorocarbon overlayer (10 eV $\\mathrm{CF}_2^+$ , 300 impacts).","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_12","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_12","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Number of sputtered Si atoms versus Ar⁺ ion impacts at 20, 30, and 40 eV. At 20 eV, Si sputtering is self-limiting and virtually stops after ~500 impacts. At 40 eV, etching continues throughout.\"},{\"panel_id\":\"b\",\"text\":\"Fraction of initial F removed from the sample versus Ar⁺ impacts. F is consumed faster at higher energies, correlating with enhanced Si etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ar+ Ion Impacts | 20 eV (Sputtered Si Atoms) | 30 eV (Sputtered Si Atoms) | 40 eV (Sputtered Si Atoms) |\\n|---|---|---|---|\\n| 0 | 0 | 0 | 0 |\\n| 200 | 2 | 10 | 15 |\\n| 400 | 7 | 15 | 18 |\\n| 600 | 8 | 16 | 23 |\\n| 800 | 11 | 17 | 26 |\\n| 1000 | 11 | 19 | 28 |\\n| 1200 | 11 | 20 | 29 |\\n| 1400 | 12 | 21 | 30 |\\n| 1600 | 13 | 22 | 32 |\\n| 1800 | 13 | 22 | 33 |\\n| 2000 | 14 | 23 | 35 |\"},{\"panel_id\":\"b\",\"text\":\"| Ar+ Ion Impacts | 20 eV (F Fraction Removed) | 30 eV (F Fraction Removed) | 40 eV (F Fraction Removed) |\\n|---|---|---|---|\\n| 0 | 0.00 | 0.00 | 0.00 |\\n| 200 | 0.05 | 0.28 | 0.30 |\\n| 400 | 0.20 | 0.33 | 0.37 |\\n| 600 | 0.24 | 0.38 | 0.43 |\\n| 800 | 0.24 | 0.44 | 0.48 |\\n| 1000 | 0.24 | 0.45 | 0.50 |\\n| 1200 | 0.27 | 0.47 | 0.50 |\\n| 1400 | 0.27 | 0.48 | 0.51 |\\n| 1600 | 0.30 | 0.48 | 0.51 |\\n| 1800 | 0.30 | 0.48 | 0.51 |\\n| 2000 | 0.30 | 0.48 | 0.51 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 20 eV, once the readily accessible surface F is consumed or reacted, the remaining F is either too deep in the substrate or bonded too strongly to participate in reactive ion etching. The Ar⁺ ions lack sufficient energy to access this buried F or to physically sputter Si without chemical assistance.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They are correlated: higher F removal corresponds to higher Si sputtering, since F enables reactive ion etching of Si.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 20 eV, where Si sputtering virtually stops after the initial etching phase.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Below 30 eV.\"}]}]","bbox":[{"panel_id":"b","x":0,"y":1,"width":457,"height":303},{"panel_id":"a","x":0,"y":311,"width":467,"height":345}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_12.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":467,"height":658,"image_format":"jpeg","image_sha256":"b455fe9ea8c249e0b7a1e86807c053768f0634eadf9a98768a7cebb96ab91ddb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_13.jpg","caption":"FIG. 13. F density as a function of sample height in the Si sample with the fluorocarbon overlayer (10 eV $\\mathrm{CF}_2^+$ , 300 impacts). Results have been plotted for the initial sample and after 300 and $600\\mathrm{Ar^{+}}$ ion impacts. $\\mathrm{Ar^{+}}$ ion energies are (a) 20 and (b) $40\\mathrm{eV}$ .","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_13","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_13","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"F density versus height at 10 eV for 100, 300, and 600 CF₂⁺ impacts. The F layer is narrow (~5 Å) and remains at a fixed position, indicating minimal substrate disturbance.\"},{\"panel_id\":\"b\",\"text\":\"F density at 30 eV. The profile is much broader, and the peak shifts to lower heights with increasing impacts, indicating that Si etching occurs simultaneously with passivation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Height h (Å) | 0 impacts (Atoms/ų) | 300 impacts (Atoms/ų) | 1000 impacts (Atoms/ų) |\\n|---|---|---|---|\\n| 25 | 0.000 | 0.000 | 0.001 |\\n| 28 | 0.000 | 0.000 | 0.005 |\\n| 30 | 0.000 | 0.000 | 0.012 |\\n| 32 | 0.000 | 0.002 | 0.015 |\\n| 34 | 0.000 | 0.005 | 0.015 |\\n| 36 | 0.005 | 0.015 | 0.018 |\\n| 38 | 0.045 | 0.028 | 0.022 |\\n| 39 | 0.058 | 0.030 | 0.025 |\\n| 40 | 0.025 | 0.015 | 0.010 |\"},{\"panel_id\":\"b\",\"text\":\"| Height h (Å) | 0 impacts (Atoms/ų) | 300 impacts (Atoms/ų) | 1000 impacts (Atoms/ų) |\\n|---|---|---|---|\\n| 20 | 0.000 | 0.000 | 0.000 |\\n| 25 | 0.000 | 0.002 | 0.002 |\\n| 28 | 0.000 | 0.008 | 0.004 |\\n| 30 | 0.000 | 0.010 | 0.006 |\\n| 33 | 0.000 | 0.003 | 0.004 |\\n| 36 | 0.005 | 0.005 | 0.002 |\\n| 39 | 0.058 | 0.008 | 0.001 |\\n| 41 | 0.005 | 0.002 | 0.000 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 40 eV, the CF₂⁺ ions have enough energy to etch the underlying Si while depositing the fluorocarbon layer. As Si is removed, the surface recedes and the F-containing layer moves downward. At 10 eV, the ion energy is too low for significant etching, so the passivation layer remains at a fixed position.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 5 Å.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The local atomic number density of fluorine at each height in the sample.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Below 30 eV, ideally around 10–20 eV.\"}]}]","bbox":[{"panel_id":"b","x":0,"y":309,"width":465,"height":338},{"panel_id":"a","x":0,"y":2,"width":462,"height":294}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_13.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":466,"height":647,"image_format":"jpeg","image_sha256":"93eaba24cd9b7da4709664b94ff843fd7929fd321150b3252315ca8b5e60b2ff","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_2.jpg","caption":"FIG. 2. F and C atoms in the $\\mathrm{SiO}_2$ sample as a function of the number of $20\\mathrm{eV}\\mathrm{CF}_2^+$ ion impacts.","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_2","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Number of F and C atoms in the SiO₂ sample versus CF₂⁺ ion impacts at 20 eV. F accumulates to ~100 atoms and saturates after ~250 impacts, while C remains low (~15 atoms), producing a strongly F-rich passivation layer.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of CF2+ Ion Impacts | F (Number of Atoms) | C (Number of Atoms) |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 25 | 18 | 5 |\\n| 50 | 32 | 8 |\\n| 75 | 42 | 10 |\\n| 100 | 52 | 11 |\\n| 125 | 62 | 12 |\\n| 150 | 72 | 13 |\\n| 175 | 85 | 13 |\\n| 200 | 88 | 15 |\\n| 225 | 90 | 16 |\\n| 250 | 98 | 15 |\\n| 275 | 102 | 15 |\\n| 300 | 98 | 14 |\\n| 350 | 96 | 12 |\\n| 400 | 94 | 10 |\\n| 450 | 105 | 11 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 6–7 (F ~ 100, C ~ 15), indicating a strongly F-rich film.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At energies above 10 eV, carbon is sputtered more easily from the surface than fluorine because the F–Si bond is stronger than the C–Si bond. This preferential C removal results in a passivation layer enriched in fluorine.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 250 CF₂⁺ ion impacts.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the composition has already saturated.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":466,"height":356}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":469,"height":361,"image_format":"jpeg","image_sha256":"a1081e44a4a1bb8cb04840e1b3f8d4981ce7aab3da18a40b6f5a67149c84a4fa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_4.jpg","caption":"FIG. 4. (Color online) The $\\mathrm{SiO}_2$ sample after (a) 200 and (b) 400 impacts of $20\\mathrm{eV}\\mathrm{CF}_3^+$ ions. FIG. 5. F and C atoms in the $\\mathrm{SiO}_2$ sample as a function of the number of $20\\mathrm{eV}\\mathrm{CF}_3^+$ ion impacts.","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_4","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Number of F and C atoms in the SiO₂ sample versus CF₃⁺ ion impacts at 20 eV. F reaches ~75 atoms at steady-state while C remains extremely low (~5 atoms). Compared to CF₂⁺, saturation takes longer (~400 impacts) and the film contains less of both species.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of CF3+ Ion Impacts | F (Number of Atoms) | C (Number of Atoms) |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 50 | 14 | 3 |\\n| 100 | 25 | 4 |\\n| 150 | 32 | 3 |\\n| 200 | 48 | 3 |\\n| 250 | 50 | 4 |\\n| 300 | 55 | 4 |\\n| 350 | 68 | 5 |\\n| 400 | 75 | 5 |\\n| 450 | 75 | 5 |\\n| 500 | 76 | 5 |\\n| 550 | 75 | 5 |\\n| 600 | 70 | 5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"CF₃⁺ yields ~75 F atoms versus ~100 F atoms for CF₂⁺, resulting in a thinner passivation layer.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 20 eV, a larger fraction of CF₃⁺ ions reflect from the surface without reacting. This occurs because CF₃⁺ has fewer carbon dangling bonds available for bonding, and the accumulating F at the surface terminates available sites, making the ions less reactive.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"CF₃⁺ has only one C atom per three F atoms, and C is preferentially sputtered at 20 eV.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"CF₂⁺.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":5,"width":474,"height":360}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":475,"height":367,"image_format":"jpeg","image_sha256":"83864f52ce6c1e0b81296bbc6d71c9a26096786c43361f7f0c7d6021e7a8bd73","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_6.jpg","caption":"FIG. 6. Effect of $\\mathrm{Ar^{+}}$ ion energy on the number of Si and O atoms sputtered from the $\\mathrm{SiO}_2$ sample with a fluorocarbon overlayer grown using $\\mathrm{CF}_3^+$ ions (400 impacts).","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_6","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the number of sputtered Si atoms as a function of the number of Ar⁺ ion impacts at different energies (50 eV, 40 eV, and 20 eV). The data points form step-like curves indicating cumulative counts.\"},{\"panel_id\":\"b\",\"text\":\"The chart shows the number of sputtered O atoms as a function of the number of Ar⁺ ion impacts at different energies (50 eV, 40 eV, and 20 eV). The data points form step-like curves indicating cumulative counts\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Ar+ Ion Impacts | 20 eV (Sputtered Si Atoms) | 40 eV (Sputtered Si Atoms) | 50 eV (Sputtered Si Atoms) |\\n|---|---|---|---|\\n| 0 | 0 | 0 | 0 |\\n| 50 | 2 | 4 | 7 |\\n| 100 | 4 | 6 | 8 |\\n| 200 | 5 | 7 | 12 |\\n| 300 | 9 | 8 | 14 |\\n| 400 | 9 | 13 | 16 |\\n| 500 | 9 | 13 | 16 |\\n| 600 | 9 | 13 | 16 |\\n| 700 | 9 | 13 | 17 |\\n| 800 | 9 | 13 | 18 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Ar+ Ion Impacts | 20 eV (Sputtered O Atoms) | 40 eV (Sputtered O Atoms) | 50 eV (Sputtered O Atoms) |\\n|---|---|---|---|\\n| 0 | 0 | 0 | 0 |\\n| 100 | 2 | 15 | 25 |\\n| 200 | 5 | 30 | 45 |\\n| 300 | 8 | 42 | 60 |\\n| 400 | 10 | 62 | 70 |\\n| 500 | 11 | 63 | 78 |\\n| 600 | 12 | 65 | 85 |\\n| 700 | 13 | 72 | 100 |\\n| 800 | 14 | 73 | 115 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In crystalline SiO₂, each Si atom is bonded to four O atoms (~16.8 eV total to liberate), while each O atom is bonded to only two Si atoms (~8.4 eV). This lower energy requirement allows O atoms to continue exiting the material even after Si sputtering has ceased.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The surface becomes oxygen-deficient due to preferential O sputtering.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 50 eV, Si continues to etch even after F is depleted.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, Si sputtering plateaus at 40 eV, indicating self-limiting behavior.\"}]}]","bbox":[{"panel_id":"b","x":3,"y":0,"width":458,"height":311},{"panel_id":"a","x":0,"y":312,"width":460,"height":349}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":464,"height":667,"image_format":"jpeg","image_sha256":"20fdf0fe3c67964dc054e72f9b66a1e28865452d05bf3bae6c578b9d65b62b10","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_1_fig_7.jpg","caption":"FIG. 7. Effect of $\\mathrm{Ar^{+}}$ ion impact on $\\mathrm{F}$ density in the $\\mathrm{SiO}_2$ sample with a fluorocarbon overlayer grown using $\\mathrm{CF}_3^+$ ions (400 impacts). Results have been plotted for (a) $20\\mathrm{eV}$ and (b) $50\\mathrm{eV}$ $\\mathrm{Ar^{+}}$ ion energies.","id":"validation/atomic-layer-etching/simulation-usecase/1/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/1/fig_7","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the F density (Atoms/ų) at different heights (Å) for an initial sample and after 200 and 400 Ar⁺ impacts at 20 eV.\"},{\"panel_id\":\"b\",\"text\":\"The line chart shows the F density (Atoms/ų) at different heights (Å) for an initial sample and after 200 and 400 Ar⁺ impacts at 50 eV\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Height h (Å) | Initial sample (Atoms/ų) | 200 Ar+ Impacts (Atoms/ų) | 400 Ar+ Impacts (Atoms/ų) |\\n|---|---|---|---|\\n| 16 | 0.000 | 0.000 | 0.001 |\\n| 18 | 0.000 | 0.000 | 0.003 |\\n| 20 | 0.000 | 0.005 | 0.006 |\\n| 21 | 0.000 | 0.009 | 0.008 |\\n| 22 | 0.003 | 0.010 | 0.012 |\\n| 23 | 0.010 | 0.012 | 0.010 |\\n| 24 | 0.019 | 0.016 | 0.009 |\\n| 25 | 0.019 | 0.015 | 0.010 |\\n| 26 | 0.019 | 0.015 | 0.010 |\\n| 27 | 0.020 | 0.012 | 0.008 |\\n| 28 | 0.021 | 0.009 | 0.004 |\"},{\"panel_id\":\"b\",\"text\":\"| Height h (Å) | Initial sample (Atoms/ų) | 200 Ar+ Impacts (Atoms/ų) | 400 Ar+ Impacts (Atoms/ų) |\\n|---|---|---|---|\\n| 12 | 0.000 | 0.000 | 0.002 |\\n| 14 | 0.000 | 0.000 | 0.005 |\\n| 16 | 0.000 | 0.002 | 0.002 |\\n| 18 | 0.000 | 0.008 | 0.004 |\\n| 20 | 0.000 | 0.010 | 0.007 |\\n| 22 | 0.004 | 0.006 | 0.005 |\\n| 24 | 0.019 | 0.008 | 0.002 |\\n| 26 | 0.019 | 0.004 | 0.002 |\\n| 28 | 0.021 | 0.004 | 0.002 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 20 eV, F atoms are removed from the surface but the distribution remains narrow and localized. At 50 eV, higher energy ions push F atoms deeper into the SiO₂ bulk, causing the profile to broaden significantly. This buried F becomes less accessible for reactive ion etching.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 15 Å (spanning from h ≈ 10 to h ≈ 25 Å).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Buried F becomes inaccessible to incoming Ar⁺ ions and cannot participate in reactive etching of Si.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"20 eV.\"}]}]","bbox":[{"panel_id":"b","x":2,"y":1,"width":499,"height":312},{"panel_id":"a","x":0,"y":321,"width":501,"height":367}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/images/fig_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/1/A molecular dynamics investigation of fluorocarbon based SiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":505,"height":689,"image_format":"jpeg","image_sha256":"20ba83eb64cc07dd29215a09296925ab2b08b8ce863507ba0a8c30b30be1209b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_22_fig_5.jpg","caption":"FIG. 5. \"Saturation curves\" showing self-limiting removal in (a) ALE for small EPC, (b) ALE for larger EPC, and (c) ALE quasi-self-limiting. In curve (d), continuous etching is shown for comparable etch time to illustrate lack of self-limiting behavior.","id":"validation/atomic-layer-etching/simulation-usecase/22/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/22/fig_5","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":3,"width":600,"height":475}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/Review Paper -- Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":606,"height":483,"image_format":"jpeg","image_sha256":"a61b4b6ec13ff5f94c337e5be9b3838183e52f52f9b6596518f274329c239344","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_22_fig_7.jpg","caption":"FIG. 7. Plasma-assisted silicon ALE, after etching $50\\mathrm{nm}$ directionally. The results show characteristic ALE benefits at all length scales: (a) excellent depth uniformity across the wafer, (b) flat silicon etch front on the feature, and (c) smooth surface. Reprinted with permission from Kanarik et al., Solid State Technol., 56, 24 (2013). Copyright 2013, Lam Research Corporation.","id":"validation/atomic-layer-etching/simulation-usecase/22/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/22/fig_7","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"c","x":21,"y":529,"width":640,"height":314},{"panel_id":"b","x":480,"y":1,"width":182,"height":442},{"panel_id":"a","x":1,"y":2,"width":467,"height":504}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/Review Paper -- Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:img_caption"},"width":667,"height":850,"image_format":"jpeg","image_sha256":"cb5679997f0ab6b07f4d9720c6a84b5c2c1aa3102fedbff576ab1d7c6e1349a6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_10.jpg","caption":"Figure 10. Change in the Gibbs free energy with temperature for various fluorination ALEt-half-reactions.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_10","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_10","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the change in Gibbs free energy (ΔG) for various reactions (R2-R6) of different surface states with NbF5 at different temperatures. In these models, '0%-slab' denotes a bare Al2O3 surface, while '100%F-slab' and '100%Cl-slab' represent surfaces fully terminated with fluorine or chlorine atoms, respectively.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| temperature [°C] | R2: Al₂O₃ → AlF₃ + NbOF₃ | R3: 0%-slab → 100%F-slab + NbOF₃ | R4: 100%-slab → 166%-F-slab + NbOF₃ | R5: 100%-Cl-slab → 166%-F-slab + NbClF₄ + NbOF₃ | R6: 100%-Cl-slab → 100%-F-slab + NbClF₃ |\\n|---|---|---|---|---|---|\\n| 100 | -48 | -48 | -23 | -80 | -100 |\\n| 300 | -58 | -58 | -33 | -100 | -122 |\\n| 600 | -71 | -71 | -47 | -135 | -165 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"R6.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"R4, R2,R3, R5, R6\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"All of them.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The fully chlorinated surface (100%-Cl-slab) is the most reactive (the most negative ΔG).\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":450,"height":402}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":450,"height":402,"image_format":"jpeg","image_sha256":"2ade554f342ae7820fa7dcbf7505fb3f2d556526207865adf31292110bda4af0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_11.jpg","caption":"Figure 11. Change in the Gibbs free energy with temperature for possible chlorination or halide-exchange reactions.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_11","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_11","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the change in Gibbs free energy (ΔG) for various reactions (R8-R14) of different surface states with CCl4 at different temperatures. In these models, '0%-slab' denotes a bare Al2O3 surface, while '100%F-slab' and '100%Cl-slab' represent surfaces fully terminated with fluorine or chlorine atoms, respectively.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| temperature [°C] | R8: Al₂O₃(s) → AlCl₃ + COCl₂ | R9: 0%·slab → 100%Cl-slab + COCl₂ | R10: 100%F-slab → 100%Cl-slab + CFCl₃ | R11: 100%F-slab → 66%Cl-slab + CFCl₃ + AlCl₃ | R12: 166%F-slab → 100%Cl-slab + CFCl₃ + AlCl₃ | R13: 100%F-slab → 0%·slab + CFCl₃ + AlCl₃ | R14: 166%F-slab → 0%·slab + CFCl₃ + AlCl₃ |\\n|---|---|---|---|---|---|---|---|\\n| 100 | -74 | -49 | 50 | 30 | 23 | -4 | -10 |\\n| 300 | -72 | -49 | 43 | 6 | -3 | -56 | -63 |\\n| 600 | -62| -40 | 26 | -31 | -43 | -136 | -143 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"R10.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Unmodified Al2O3 surface.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The over-fluorinated surface (166%F-slab).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":455,"height":408}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_11.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":455,"height":408,"image_format":"jpeg","image_sha256":"d4c7977a10babfcbaa86ea2932231de80a8ec34c27c75408719a67da7f70983f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_3.jpg","caption":"Figure 3. $\\mathrm{AlF}_x[\\mathrm{O}]$ film thickness vs variation in total $\\mathrm{NbF}_5$ exposure time at 400 and $460^{\\circ}\\mathrm{C}$ . The total $\\mathrm{NbF}_5$ exposure time is calculated by multiplying the $\\mathrm{NbF}_5$ pulse time by the total number of cycles. The $\\mathrm{NbF}_5$ pulse times of 4.5 and $3\\mathrm{~s~}$ were used at 400 and $460^{\\circ}\\mathrm{C}$ , respectively. Each $\\mathrm{NbF}_5$ pulse was separated by a $6\\mathrm{~s~}$ long $\\mathrm{N}_2$ purge step.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_3","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_3","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":453,"height":408}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":453,"height":408,"image_format":"jpeg","image_sha256":"9b180d95ce06b33f80b0f88bc177d9abb51164a233503914cf0c8bf8481d73e4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_5.jpg","caption":"Figure 5. Change in EPC with etch temperature for the $\\mathrm{NbF}_5$ and $\\mathrm{CCl_4}$ cyclic etching process and compared to no-etching by $\\mathrm{CCl_4}$ only. A total of 150 etch cycles were performed per data point. The EPC at etch temperatures below $380^{\\circ}\\mathrm{C}$ stayed zero for both curves.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_5","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_5","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between etch temperature and etch per cycle for two different sequences: NbF5 + CCl4 (3/6/3/6s) and CCl4 (3/6s). CCl4 alone produces no etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| etch temperature [°C] | NbF5 + CCl4 (3/6/3/6s): etch per cycle [A/Cycle] |CCl4 (3/6s): etch per cycle [A/Cycle] |\\n|---|---|---|\\n| 380 | 0.03 | -0.07 |\\n| 400 | 0.225 | -0.06 |\\n| 460 | 1.45 | -0.06 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. An ALE window would look like a plateau, where the EPC remains roughly constant across wide range of temperatures. Here, the EPC rises continiously.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"CCl4 sequence (9 seconds vs. 18 seconds in NbF5/CCl4 sequence).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Wihtout NbF5 step, no etching occurs.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Highly sensitive (EPC jumps from 0.2 Å/Cycle at 400 °C to 1.45 Å/Cycle at 460 °C)\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":450,"height":416}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":450,"height":416,"image_format":"jpeg","image_sha256":"996c38210411cad693bdf29a2e2d81872a311f54ffe7caac1fbef68dd40b98e3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_7.jpg","caption":"Figure 7. XPS depth profile of $\\mathrm{Al}_2\\mathrm{O}_3$ exposed to $\\mathrm{NbF}_5$ for a total of 450 s at $460^{\\circ}\\mathrm{C}$ . The atomic percentage of elements found in the converted film is plotted with respect to the sputter time.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_7","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_7","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the XPS depth profile of various species (C 1s, O 1s, F 1s, Al 2p, Nb 3d), shown as at.% against sputter time. It reveals a high surface fluorine concentration that gradually decreases with sputter time, while the oxygen signal significantly increases deep into the film. The aluminum content rises slightly and niobium remains low.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| sputter time [min] | atomic % | Species |\\n|---|---|---|\\n| 0,00 | 49,27 | F1s |\\n| 0,26 | 56,54 | F1s |\\n| 0,51 | 53,77 | F1s |\\n| 1,02 | 46,38 | F1s |\\n| 1,53 | 36,81 | F1s |\\n| 2,00 | 26,08 | F1s |\\n| 2,78 | 12,69 | F1s |\\n| 3,51 | 5,88 | F1s |\\n| 4,26 | 2,88 | F1s |\\n| 5,00 | 1,96 | F1s |\\n| 0,02 | 14,65 | O1s |\\n| 0,26 | 16,85 | O1s |\\n| 0,52 | 19,96 | O1s |\\n| 1,01 | 25,96 | O1s |\\n| 1,50 | 34,15 | O1s |\\n| 2,00 | 44,08 | O1s |\\n| 2,75 | 54,46 | O1s |\\n| 3,49 | 59,77 | O1s |\\n| 4,26 | 62,08 | O1s |\\n| 4,99 | 61,50 | O1s |\\n| 0,02 | 19,62 | Al2p |\\n| 0,27 | 23,42 | Al2p |\\n| 0,52 | 24,35 | Al2p |\\n| 1,01 | 25,85 | Al2p |\\n| 1,53 | 27,58 | Al2p |\\n| 2,01 | 29,65 | Al2p |\\n| 2,79 | 31,96 | Al2p |\\n| 3,52 | 33,69 | Al2p |\\n| 4,26 | 33,81 | Al2p |\\n| 4,99 | 32,31 | Al2p |\\n| 0,02 | 14,77 | C1s |\\n| 0,25 | 2,19 | C1s |\\n| 0,51 | 1,62 | C1s |\\n| 1,01 | 1,50 | C1s |\\n| 1,51 | 0,92 | C1s |\\n| 2,01 | 0,12 | C1s |\\n| 2,75 | 0,46 | C1s |\\n| 3,49 | 0,23 | C1s |\\n| 4,23 | 0,23 | C1s |\\n| 5,02 | 0,12 | C1s |\\n| 0,01 | 1,38 | Nb 3d |\\n| 0,27 | 1,15 | Nb 3d |\\n| 0,51 | 0,92 | Nb 3d |\\n| 1,01 | 0,69 | Nb 3d |\\n| 1,51 | 0,92 | Nb 3d |\\n| 2,00 | 0,69 | Nb 3d |\\n| 2,75 | 0,58 | Nb 3d |\\n| 3,52 | 0,46 | Nb 3d |\\n| 4,28 | 0,12 | Nb 3d |\\n| 4,99 | 0,12 | Nb 3d |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Fluorine\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Oxygen.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In the bulk.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The fluorination extends significantly deep into the film. Even after 3-4 minutes of sputtering, F signal is still detectable. Since sputtering removes material over time, the persisiting signal indicates that the fluorination happens not only on the surface.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":455,"height":400}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":455,"height":400,"image_format":"jpeg","image_sha256":"de8969511b855ad04294f71e93c9040a774c2105769ced81ca3f2864b3096689","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_8.jpg","caption":"Figure 8. XPS depth profile of the remaining $\\mathrm{Al}_2\\mathrm{O}_3$ after removing about $18\\mathrm{nm}$ film by the $\\mathrm{NbF}_5$ and $\\mathrm{CCl}_4$ ALEt process. A zoomed picture at the top right corner focuses on Nb, F, and Cl signals.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_8","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_8","subset":"multiple-line-chart","split":"validation","classification":[{"panel_id":"a","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A chart showing the XPS elemental depth profile (at.% agains sputter time) of C, O, Al, Nb and Cl on the Al2O3 surface after approx. 18 nm were removed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| sputter time [min] | atomic % | species |\\n|---|---|---|\\n| 0.0 | 26.4 | C1s |\\n| 0.3 | 0.4 | C1s |\\n| 0.5 | 0.2 | C1s |\\n| 1.0 | 0.0 | C1s |\\n| 1.5 | 0.4 | C1s |\\n| 2.0 | 0.0 | C1s |\\n| 2.8 | 0.2 | C1s |\\n| 0.0 | 26.4 | F1s |\\n| 0.2 | 1.4 | F1s |\\n| 0.5 | 0.2 | F1s |\\n| 1.0 | 0.5 | F1s |\\n| 1.5 | 0.4 | F1s |\\n| 2.0 | 0.5 | F1s |\\n| 2.8 | 0.2 | F1s |\\n| 0.0 | 26.4 | Nb 3d |\\n| 0.3 | 0.3 | Nb 3d |\\n| 0.5 | 0.2 | Nb 3d |\\n| 1.0 | 0.5 | Nb 3d |\\n| 1.5 | 0.4 | Nb 3d |\\n| 2.0 | 0.5 | Nb 3d |\\n| 2.8 | 0.2 | Nb 3d |\\n| 0.0 | 24.6 | Al 2p |\\n| 0.2 | 34.6 | Al 2p |\\n| 0.5 | 34.9 | Al 2p |\\n| 1.0 | 35.0 | Al 2p |\\n| 1.5 | 35.4 | Al 2p |\\n| 2.0 | 35.2 | Al 2p |\\n| 2.4 | 35.2 | Al 2p |\\n| 2.7 | 35.1 | Al 2p |\\n| 0.0 | 41.9 | O1s |\\n| 0.2 | 63.6 | O1s |\\n| 0.5 | 64.1 | O1s |\\n| 1.0 | 64.8 | O1s |\\n| 1.5 | 64.8 | O1s |\\n| 2.0 | 64.3 | O1s |\\n| 2.8 | 64.7 | O1s |\\n| 0.0 | 0.0 | Cl 2p |\\n| 0.3 | 0.0 | Cl 2p |\\n| 0.5 | 0.3 | Cl 2p |\\n| 1.0 | 0.0 | Cl 2p |\\n| 1.5 | 0.0 | Cl 2p |\\n| 2.0 | 0.0 | Cl 2p |\\n| 2.8 | 0.0 | Cl 2p |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the etching process leaves minimal precursor contamination on the remaining surface. The XPS depth profile demonstrates that residues of Niobium and Chlorine are negligible. It is indicating that the volatile reaction products or unreacted precursors were successfully removed.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Oxygen\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Oxygen\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The removal is not compelte, a thin residual fluorinated layer persists on the surface.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":456,"height":406}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"multiple line chart","caption_source":"content.json:image_caption"},"width":456,"height":406,"image_format":"jpeg","image_sha256":"1243d3a67f6216b59fde08dbbb3994295e6b82e80b6d396cfd7003a404fb1910","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/multiple-scatter-plot/test/metadata.jsonl b/subsets/multiple-scatter-plot/test/metadata.jsonl index 77f07a05b9bb839e7a618a2a5c4a0f307dcac0e7..12f0e9f6c7515706d96b996315a7245b6cd1a249 100644 --- a/subsets/multiple-scatter-plot/test/metadata.jsonl +++ b/subsets/multiple-scatter-plot/test/metadata.jsonl @@ -1,54 +1,54 @@ -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_12.jpg","caption":"Figure 12. Refractive index, $n$ , of the $\\mathrm{Al}_2\\mathrm{O}_3$ ALD films versus growth temperature from 33 to $177^{\\circ}C$ and comparisons to results from other $\\mathrm{Al}_2\\mathrm{O}_3$ ALD studies at higher temperatures.9,12-15,21","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_12","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_12","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":595,"height":403,"image_format":"jpeg","image_sha256":"64063e72c567306ff9aebbf0d0986d83ce9743cf3d191eaca3e07600c7dfd96f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":595,"height":403}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between growth temperature and refractive index, with data points from this work for lower temperatures (below 200 °C) and other studies for higher temperatures (~150°C - 500°C). This study shows stronger positive correlation between temperature and refractive index.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Growth Temperature (°C) | Refractive Index, n | Study |\\n|---|---|---|\\n| 31 | 1.511 | This work |\\n| 56 | 1.532 | This work |\\n| 78 | 1.541 | This work |\\n| 101 | 1.570 | This work |\\n| 123 | 1.582 | This work |\\n| 148 | 1.611 | Other studies |\\n| 148 | 1.631 | Other studies |\\n| 175 | 1.602 | This work |\\n| 176 | 1.651 | Other studies |\\n| 198 | 1.641 | Other studies |\\n| 248 | 1.641 | Other studies |\\n| 299 | 1.671 | Other studies |\\n| 398 | 1.682 | Other studies |\\n| 497 | 1.672 | Other studies |\\n| 499 | 1.651 | Other studies |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This study.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The maximum refractive index achieved in this work is approximately 1.60, occuring at 175°C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Among the temperatures studied in this work, the highest growth temperature (~175 °C) appears to produce the optically densest films. This is supported by the maximum refractive index measured in this study. A higher refractive index indicates improved greater optical density.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_4.jpg","caption":"Figure 4. $\\mathrm{Al}_2\\mathrm{O}_3$ mass gain per cycle versus reactant exposure time at $58^{\\circ}C$ . Purge times for both TMA and water were 30 s each. The exposure time of the reactant not being investigated was held constant at $1\\mathrm{s}$ .","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_4","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":511,"height":400,"image_format":"jpeg","image_sha256":"94bf66aac13a14f0e6ef8eadcaa657abf6c1c7c5abbd6f6f8a35f64ad70f93ff","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":511,"height":400}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between exposure time and mass gain per cycle for two different substances at 58°C. The cycle sequence for water was (1/30/x/30), fro TMA it was (y/30/1/30).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Exposure Time (s) | Mass Gain per Cycle (ng/cm²) | Reagent (cycle conditions) |\\n|---|---|---|\\n| 0,00 | 0,69 | Water (1,30,x,30) |\\n| 0,18 | 22,38 | Water (1,30,x,30) |\\n| 0,47 | 26,08 | Water (1,30,x,30) |\\n| 0,96 | 28,73 | Water (1,30,x,30) |\\n| 1,97 | 31,15 | Water (1,30,x,30) |\\n| 3,97 | 32,88 | Water (1,30,x,30) |\\n| 7,98 | 35,15 | Water (1,30,x,30) |\\n| 0,00 | 0,16 | TMA (y,30,1,30) |\\n| 0,18 | 26,08 | TMA (y,30,1,30) |\\n| 0,47 | 27,07 | TMA (y,30,1,30) |\\n| 0,96 | 27,07 | TMA (y,30,1,30) |\\n| 1,97 | 27,82 | TMA (y,30,1,30) |\\n| 3,97 | 29,18 | TMA (y,30,1,30) |\\n| 7,98 | 30,92 | TMA (y,30,1,30) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The graph shows soft saturation. Hard saturation would be a perfectly horizontal line. The small upward slope here indicates the reaction is either not perfectly complete or purge times are insufficient.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Water produces higher mass gain (data point at 1 s pulse time).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1 second.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_5.jpg","caption":"Figure 5. $\\mathrm{Al}_2\\mathrm{O}_3$ mass gain per cycle versus purge time at 58 $^\\circ \\mathrm{C}$ . Exposure times for both TMA and water were 1 s each. The purge time of the reactant not being investigated was held constant at $30~\\mathrm{s}$ .","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_5","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":528,"height":394,"image_format":"jpeg","image_sha256":"dcfb4490f903d9bb591161b0b611fd5aa61d932ded2399673594000184bfd8c6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":528,"height":394}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between purge time (in seconds) and mass gain per cycle (in ng/cm²) at 58°C. The data points represent measurements for water (1,30,1,x) and TMA (1,y,1,30).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Purge Time (s) | Mass Gain per Cycle (ng/cm²) | Reagent (cycle conditions) |\\n|---|---|---|\\n| 2,02 | 31,20 | Water (1,30,1,x) |\\n| 4,78 | 28,65 | Water (1,30,1,x) |\\n| 9,90 | 27,82 | Water (1,30,1,x) |\\n| 19,93 | 27,35 | Water (1,30,1,x) |\\n| 29,97 | 27,07 | Water (1,30,1,x) |\\n| 40,07 | 27,02 | Water (1,30,1,x) |\\n| 0,27 | 29,01 | TMA (1,y,1,30) |\\n| 1,95 | 27,35 | TMA (1,y,1,30) |\\n| 9,90 | 27,35 | TMA (1,y,1,30) |\\n| 20,00 | 27,52 | TMA (1,y,1,30) |\\n| 29,97 | 27,79 | TMA (1,y,1,30) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At short purge times (approx. below 10 s).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The evidence of CVD growth is the higher mass gain per cycle observed at short purge times. In ideal ALD, mass gain should be independent of purge time once surface reactions are saturated. The decrease in mass gain with increasing purge time indicates gas-phase reactions at short purges, which are characteristic of CVD.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 10 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, 10 seconds is likely not sufficient for purging after reaction with water. The plot shows a higher mass gain per cycle at around 10 seconds, indicating residual water remains and contributes to CVD‑like growth. A longer purge time is needed for the mass gain to reach a stable, ALD‑like plateau.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_6.jpg","caption":"Figure 6. Ellipsometry data for $\\mathrm{Al}_2\\mathrm{O}_3$ ALD films grown using 300 reaction cycles on Si(100) substrates. The refractive index, growth rate, and density (calculated using ellipsometry and QCM data) are plotted versus growth temperatures from 33 to $177^{\\circ}C$ .","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_6","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":586,"height":367,"image_format":"jpeg","image_sha256":"526dfb04b4e16db8234f1099a12146840fdf4bd4b058a27d9037a3204ad5fe88","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":586,"height":367}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows how growth temperature affects the density, refractive index, and growth rate of the film. As temperature increases, density and refractive index generally rise, while the growth rate exhibits a peak at intermediate temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Growth Temperature (°C) | Density (g/cm³) | Refractive Index n | Growth Rate (Å/cycle) |\\n|---|---|---|---|\\n| 32,73 | 2,48 | 1,52 | 1,11 |\\n| 57,47 | 2,50 | 1,53 | 1,20 |\\n| 79,64 | 2,65 | 1,55 | 1,27 |\\n| 101,55 | 2,68 | 1,58 | 1,34 |\\n| 124,23 | 2,95 | 1,60 | 1,34 |\\n| 176,55 | 3,01 | 1,61 | 1,26 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They are possitively correlated (the refractive index increases with increasing density).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, there is evidence of an ALD temperature window. The growth rate remains relatively constant over an intermediate temperature. This indicates self‑limiting ALD behavior without strong temperature‑driven variations.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher temperatures lead to more dense films.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 100°C - 125 °C.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_9.jpg","caption":"Figure 9. Density of $\\mathrm{Al}_2\\mathrm{O}_3$ ALD films versus growth temperature from 33 to $177^{\\circ}\\mathrm{C}$ for the various methods.","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_9","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":564,"height":408,"image_format":"jpeg","image_sha256":"3a460c225e510b42586e062fb3b66d77891659d5d66bf521b63cffe2f8df3ea5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":564,"height":408}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows that the density of Al₂O₃ ALD films increases with growth temperature from 33 to 177 °C. Multiple measurement techniques (ellipsometry + QCM, profilometry + QCM, AFM + QCM, XRR, RBS/FRes + ellipsometry, and the Lorentz–Lorenz method) yield consistent upward trends with some variations between methods.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Growth Temperature (°C) | Density (g/cm³) | Measurement |\\n|---|---|---|\\n| 32.42 | 2.49 | Ellipsometry + QCM |\\n| 57.52 | 2.50 | Ellipsometry + QCM |\\n| 79.48 | 2.65 | Ellipsometry + QCM |\\n| 101.70 | 2.68 | Ellipsometry + QCM |\\n| 124.97 | 2.94 | Ellipsometry + QCM |\\n| 176.47 | 2.99 | Ellipsometry + QCM |\\n| 32.42 | 2.53 | Profilometry + QCM |\\n| 57.25 | 2.67 | Profilometry + QCM |\\n| 79.22 | 2.59 | Profilometry + QCM |\\n| 101.44 | 2.69 | Profilometry + QCM |\\n| 125.49 | 3.08 | Profilometry + QCM |\\n| 176.73 | 3.01 | Profilometry + QCM |\\n| 32.16 | 2.43 | AFM + QCM |\\n| 57.52 | 2.75 | AFM + QCM |\\n| 79.48 | 2.61 | AFM + QCM |\\n| 101.44 | 2.49 | AFM + QCM |\\n| 124.97 | 2.83 | AFM + QCM |\\n| 176.99 | 2.99 | AFM + QCM |\\n| 32.16 | 2.42 | XRR |\\n| 56.99 | 2.58 | XRR |\\n| 79.48 | 2.70 | XRR |\\n| 101.44 | 2.66 | XRR |\\n| 124.44 | 2.74 | XRR |\\n| 177.25 | 3.07 | XRR |\\n| 32.42 | 2.69 | RBS/FReS+Ellipsomet |\\n| 57.25 | 2.66 | RBS/FReS+Ellipsomet |\\n| 79.22 | 2.74 | RBS/FReS+Ellipsomet |\\n| 101.44 | 2.86 | RBS/FReS+Ellipsomet |\\n| 124.71 | 2.90 | RBS/FReS+Ellipsomet |\\n| 177.25 | 3.12 | RBS/FReS+Ellipsomet |\\n| 32.16 | 2.63 | Lorentz-Lorentz |\\n| 57.52 | 2.71 | Lorentz-Lorentz |\\n| 79.22 | 2.75 | Lorentz-Lorentz |\\n| 101.70 | 2.88 | Lorentz-Lorentz |\\n| 124.71 | 2.92 | Lorentz-Lorentz |\\n| 176.73 | 2.96 | Lorentz-Lorentz |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ellipsometry + QCM, profilometry + QCM, and XRR techniques appear to agree most closely with each other.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They show a positive correlation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"RBS/FRes + ellipsometryand the Lorentz–Lorenz method.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The variability between measurements is larger at 100°C .\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_12.jpg","caption":"FIG. 12. (Color online) Thickness evolution of $\\mathrm{Pt}$ and $\\mathrm{PtO_2}$ films deposited on an $\\mathrm{Al}_2\\mathrm{O}_3$ substrate (Ref. 164). The precursor was $\\mathrm{Pt(Cp^{Me})Me_3}$ and $\\mathrm{O}_2$ gas or an $\\mathrm{O}_2$ plasma were used as the oxidants. After 150 cycles, the plasma-assisted ALD process was stopped and film growth was continued using thermal ALD. The plasma exposure time for was $0.5\\mathrm{s}$ for $\\mathrm{Pt}$ and $5\\mathrm{s}$ for $\\mathrm{PtO_2}$ . From H.C.M. Knoops et al., Electrochem. Solid-State Lett. 12, G35 (2009). Reproduced with permission of ECS-The Electrochemical Society.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_12","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_12","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":683,"height":533,"image_format":"jpeg","image_sha256":"f8b2a824400e957968673796907766e6172ec2443dcd3bea9c793a8d9bcbf3db","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":683,"height":533}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the relationship between film thickness and the number of ALD cycles for different deposition methods. Both Plasma ALD Pt and Plasma ALD PtO₂ display nearly linear growth with increasing cycles, while Thermal ALD Pt shows negligible thickness change, indicating limited film deposition. Plasma-enhanced processes thus exhibit higher growth rates and efficiency\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of ALD Cycles | Plasma ALD Pt (nm) | Thermal ALD Pt (nm) | Plasma ALD PtO₂ (nm) |\\n|----------------------|--------------------|---------------------|----------------------|\\n| 0 | 0 | 0 | 0 |\\n| 50 | 2 | 0 | 1.8 |\\n| 100 | 4 | 0 | 3.5 |\\n| 150 | 6 | 0 | 5.5 |\\n| 200 | 8 | 0 | 7.5 |\\n| 250 | 10 | 0 | 9.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Plasma ALD Pt and Plasma ALD PtO₂ show steady linear increases in thickness with the number of cycles, while Thermal ALD Pt shows minimal or no growth, indicating poor deposition efficiency under the given conditions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Film thickness (nm).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Plasma ALD Pt, Thermal ALD Pt, Plasma ALD PtO₂\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_15_fig_4.jpg","caption":"FIG. 4. Loss tangent of BST film grown on $\\mathrm{MgO}$ , $\\mathrm{TiO_2 / Si}$ , and $\\mathrm{Ta}_2\\mathrm{O}_5 / \\mathrm{Si}$ substrates.","id":"test/atomic-layer-deposition/experimental-usecase/15/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/15/fig_4","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/Il-Doo Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":539,"height":531,"image_format":"jpeg","image_sha256":"b23c14ec128765c1e3fe1a27d88a3082c16f1241c53a28e568071ccafae437fb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":533,"height":531}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Chart plots loss tangent against applied voltage for BST/MgO, BST/TiO2/Si and BST/Ta2O5/Si samples.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Applied Voltage (V) | Loss Tangent of BST/MgO | Loss Tangent of BST/TiO2/Si | Loss Tangent of BST/Ta2O5/Si |\\n|-------------------|--------------|-----------|----------|\\n| 0 | 0.0 | 0.05 | 0.12 |\\n| 2 | 0.0 | 0.1 | 0.18 |\\n| 4 | 0.0 | 0.18 | 0.22 |\\n| 6 | 0.0 | 0.2 | 0.38 |\\n| 8 | 0.0 | 0.3 | 0.45 |\\n| 10 | 0.0 | 0.35 | 0.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The loss tangent increases with increase in applied voltage.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After an applied voltage of 2 V, increasing the voltage the loss tangent of BST/Ta2O5/Si is double that of BST/TiO2/Si\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"BST films grown on MgO showed the lowest loss tangent\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The loss tangent of BST grown on TiO2 /Si and Ta2O5 /Si is high, presumably due to the lossy Si substrate. The figure of merit (FOM), ratio of\\ntunability to dielectric loss, is very important for microwave tunable device applications. At an applied voltage of 5 V, the\\nFOM of BST/TiO2 and BST/Ta2O5 were 5.22 and 1.57, respectively. The BST films grown on TiO2 and Ta2O5 buffered\\nSi substrates showed relatively lower FOM values as compared to the FOM (11.87) of BST/MgO due to the lossy Si substrate in the former case\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_21_fig4.jpg","caption":"Fig.4 Phase shift of the incident light $(\\Delta)$ from in situ SE measurements of the reaction of $\\mathrm{CO_2}$ and $\\mathsf{H}_2\\mathsf{O}$ with $\\sim 50$ nm plasma ALD films grown at 250, 275 and $300^{\\circ}C$ First, $\\mathrm{CO_2}$ was dosed into the reaction chamber 20 times with pulses of 2 s, next $\\mathsf{H}_2\\mathsf{O}$ was pulsed 20 times for $50~\\mathrm{ms}$ and afterwards $\\mathrm{CO_2}$ was again pulsed 20 times. SE data was recorded after every pulse and $\\Delta$ is plotted at $589~\\mathrm{nm}$","id":"test/atomic-layer-deposition/experimental-usecase/21/fig4","sample_id":"atomic-layer-deposition/experimental-usecase/21/fig4","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/N. Hornsveld et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":558,"height":531,"image_format":"jpeg","image_sha256":"7f778537308962d6097e460f66c2be82c4573463d58b8c38750637ed2c2fe640","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":552,"height":526}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Phase shift of the incident light (D) from in situ SE measurements of the reaction of CO2 and H2O with ~50 nm plasma ALD films grown at 250, 275 and 300 °C\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Measurement Number | Δ (°) at 250 °C | Δ (°) at 275 °C | Δ (°) at 300 °C |\\n|---------------------|-----------------|-----------------|-----------------|\\n| 0 | 0 | 0 | 0 |\\n| 10 | 1 | 5 | 2 |\\n| 20 | 1 | 10 | 3 |\\n| 30 | 1 | 13 | 6 |\\n| 40 | 1 | 15 | 8 |\\n| 50 | 1 | 18 | 10 |\\n| 60 | 1 | 20 | 12 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"First, CO2 was dosed into the reaction chamber 20 times with pulses of 2 s, next H2O was pulsed 20 times for 50 ms and afterwards CO2 was again pulsed 20 times\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. LiOH/Li2O at 275 °C\\n, 2. Li2O at 300 °C\\n, 3. Li2CO3 at 250 °C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For plasma depositions at 250 °C, delta was unaffected by CO2 and H2O exposure, pointing out the stability of the film. However, the film deposited at a slightly higher temperature of 275 °C strongly reacted with CO2, whereas for the film deposited at 300 °C, delta only slightly changes during the frst pulse. Both LiOH and Li2O could react with CO2 to form Li2CO3. the 300 °C film consisting of Li2O is reacting with the H2O forming LiOH. Next, CO2 is pulsed again, and the layer is again reacting to form Li2CO3. Unlike the film deposited at 300 °C, the as-deposited 275 °C film was very reactive towards the first CO2 pulses and therefore (partly) consisted of LiOH. For all other fims, which include plasma ALD films deposited at 50–250 °C and thermal ALD films deposited at 50–300 °C, the change in Delta was negligibly small, indicating that almost no reaction with H2O or CO2 occurred.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_21_fig_10.jpg","caption":"Fig. 10 (a) Impedance spectroscopy of $50 \\mathrm{nm} \\mathrm{Li_2CO_3}$ films prepared by thermal (blue) and plasma-assisted (red) ALD at $150^{\\circ}\\mathrm{C}$ and (b) equivalent circuit models used to fit the data.","id":"test/atomic-layer-deposition/experimental-usecase/21/fig_10","sample_id":"atomic-layer-deposition/experimental-usecase/21/fig_10","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"apparatus diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/N. Hornsveld et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":486,"height":919,"image_format":"jpeg","image_sha256":"93cdbe96210709458acf437a4420463fd75f0780d1c79728735d7cdc365e42c4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":5,"width":483,"height":518},{"panel_id":"b","x":6,"y":532,"width":476,"height":387}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a impedance spectroscopy of 50 nm Li2CO3 films prepared by thermal and plasma-assisted ALD.\"},{\"panel_id\":\"b\",\"text\":\"The figure depicts a equivalent circuits used to fit data with resistors (R_s, R_1) and capacitors (CPE_1, CPE_war).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Condition | Z_Re (kΩ) Range | Z_Im (kΩ) Peak |\\n|-----------|------------------|---------------|\\n| Plasma | 0 – 15 | ~5 |\\n| Thermal | 0 – 30 | ~15 |\"},{\"panel_id\":\"b\",\"text\":\"| Model | Description |\\n|-------|--------------------------------------------------|\\n| I | Rs – (R1 II CPE1) – CPEwar |\\n| II | Rs – (R1 II CPE1) – (R2 II CPE2) – CPEwar |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Li-ion conductivity of plasma and thermal ALD Li2CO3 layers was investigated using impedance spectroscopy. The measurements were performed at open circuit potential (OCP) on 50 nm Li2CO3 flms deposited at 150 °C on a TiN current collector.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both the measured thermal and plasma ALD layers show a behavior characteristic of a solid electrolyte: an intercept with the x-axis at high frequency,\\na semi-circle at medium frequency and a 45° inclined response at low frequency. Such behavior is typically associated with the ionic conductivity through a solid material. The high frequency intercept with the x-axis is generally attributed to the resistance of the cables, contacts and liquid electrolyte, the\\nsemi-circle originates from the ionic conductivity through the solid material and its capacitive response.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"When equivalent circuit model I was tried to fit the response of the plasma deposited Li2CO3 layer, no adequate fit could be obtained. For this reason, model II was used. Thus thermal ALD process uses model I and plasma ALD process uses model II to fit the data.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. For model I used to fit thermal ALD, a low chi2 value of 5 *10-4 is obtained.\\n2. For model II fitting plasma ALD, a low chi2 value of 2 *10-4 is obtained.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_21_fig_5.jpg","caption":"Fig. 5 In situ SE thickness measurement for plasma-assisted ALD of $\\mathrm{Li}_{2}\\mathrm{CO}_{3}$ at $300^{\\circ}\\mathrm{C}$ using different $\\mathrm{O}_{2}$ plasma exposure times.","id":"test/atomic-layer-deposition/experimental-usecase/21/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/21/fig_5","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/N. Hornsveld et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":566,"height":447,"image_format":"jpeg","image_sha256":"00da872fadf822eaeda8b2bb0929b141ac0141118abeb6003c46ba9a46865a0a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":4,"width":558,"height":445}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows thickness versus number of cycles of plasma assisted ALD of Li2CO3 for three different plasma exposure times.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | Thickness (nm) - 3 s plasma | Thickness (nm) - 5 s plasma | Thickness (nm) - 20 s plasma |\\n|-------------------|-----------------------------|-----------------------------|------------------------------|\\n| 0 | 0 | 0 | 0 |\\n| 50 | 5 | 8 | 10 |\\n| 100 | 10 | 15 | 18 |\\n| 150 | 15 | 22 | 26 |\\n| 200 | 20 | 28 | 32 |\\n| 250 | 25 | 33 | 38 |\\n| 300 | 30 | 38 | 44 |\\n| 350 | 35 | 43 | 48 |\\n| 400 | 40 | 47 | 50 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"From the thickness evolution with number of ALD cycles for various plasma exposure times, it can be observed, the bulk growth per cycle for different plasma exposure times is similar\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For longer plasma exposure times, the growth per cycle requires a lower number of ALD cycles to become linear, compared to shorter plasma exposure times. The formation of LiOH/Li2O can thus be further stimulated by prolonging the plasma exposure time.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_23_figure_6.jpg","caption":"Figure 6. $\\mathrm{Ga}_2\\mathrm{O}_3$ growth rate at 250 and $350^{\\circ}\\mathrm{C}$ as a function of (a) TMGa and (b) $\\mathrm{O}_3$ exposures.","id":"test/atomic-layer-deposition/experimental-usecase/23/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/23/figure_6","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/David J. Comstock et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":478,"height":731,"image_format":"jpeg","image_sha256":"162527fabdafbf4b36007a44c50e36e6d47cacfed600dbf597e69220b96d3966","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":2,"width":471,"height":370},{"panel_id":"b","x":4,"y":365,"width":471,"height":363}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the growth rate of a material as a function of TMGa exposure time at two different temperatures, 250°C and 350°C.\"},{\"panel_id\":\"b\",\"text\":\"The scatter plot illustrates the growth rate of a material as a function of ozone exposure time at two different temperatures, 250°C and 350°C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TMGa exposure (sec) | Growth rate (Å/cycle) 250 °C | Growth rate (Å/cycle) 350 °C |\\n|---|---|---|\\n| 0.5 | 0.4 | 0.5 |\\n| 1.0 | 0.4 | 0.55 |\\n| 2.0 | 0.4 | 0.55 |\"},{\"panel_id\":\"b\",\"text\":\"| Ozone exposure (sec) | Growth rate (Å/cycle) 250 °C | Growth rate (Å/cycle) 350 °C |\\n|---|---|---|\\n| 1 | 0.15 | 0.5 |\\n| 3 | 0.3 | 0.5 |\\n| 5 | | 0.5 |\\n| 6 | 0.4 | 0.55 |\\n| 12 | 0.5 | |\\n| 18 | 0.5 | |\\n| 24 | 0.55 | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.5 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 0.4 and 0.5 Å/cycle, respectively.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The saturation of Ga₂O₃ growth with respect to ozone exposure occurs much faster at 350 °C than at 250 °C. At 350 °C, a saturated growth rate of 0.52 Å/cycle is reached with ozone exposures as short as 3 seconds, whereas at 250 °C, exposure times of at least 12 seconds are required to reach the same growth rate. This temperature dependence indicates that the reaction between ozone and the TMGa-terminated surface is the rate-limiting step in the ALD process, as higher temperatures facilitate more rapid completion of this surface reaction.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At least 12 seconds.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_23_figure_7.jpg","caption":"Figure 7. $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ growth rate as a function of the deposition temperature for fixed TMGa exposures of $0.5\\mathrm{~s~}$ and variable ozone exposures.","id":"test/atomic-layer-deposition/experimental-usecase/23/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/23/figure_7","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/David J. Comstock et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":475,"height":475,"image_format":"jpeg","image_sha256":"c139831dc1d020091cd6a5e805eef6dc4a65809b997daa91da186f880ec85276","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":475,"height":475}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between temperature and growth rate for ozone exposure times of 6 seconds, 24 seconds, and 72 seconds.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Growth rate (Å/cycle) |\\n|---|---|\\n| 200 | 0.2 |\\n| 225 | 0.3 |\\n| 250 | 0.4 |\\n| 275 | 0.5 |\\n| 300 | 0.5 |\\n| 325 | 0.5 |\\n| 350 | 0.5 |\\n| 375 | 0.5 |\\n| 400 | 0.5 |\\n| 450 | 0.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.2 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.4 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.5 Å/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"First, the growth rate increases as a function of temperature. It plateaus at 0.5 Å/cycle at 275 °C. Above 400 °C, the growth rate starts to decrease. This means that the temperature window for this ALD process is between 275 and 400 °C.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_3_figure_5.jpg","caption":"Figure 5. AFM images of a smooth film (top) and a rough film (bottom). The area is $1\\mu \\mathrm{m}\\times 1\\mu \\mathrm{m}$ . The height scale is from 0 to $20 \\mathrm{nm}$ . The total film thickness is $50 \\mathrm{nm}$ . Figure 6. Film roughness of hafnium oxide thin films as a function of deposition temperature and thickness.","id":"test/atomic-layer-deposition/experimental-usecase/3/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/3/figure_5","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/Hausmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":544,"height":384,"image_format":"jpeg","image_sha256":"3c56dab54e8374cc25d651912d3eb5503a946f066b40ee9662b6cf17482d3ca4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":544,"height":384}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between deposition temperature and film thickness, with white points indicating films with RMS roughness <1% and black points indicating films with RMS roughness >5%.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition Temperature (°C) | Film Thickness (nm) | RMS Roughness |\\n|---|---|---|\\n| 50 | 120,4 | <1% |\\n| 100 | 70,4 | <1%|\\n| 125 | 50,3 | <1% |\\n| 150 | 34,9 | <1% |\\n| 150 | 80,3 | >5% |\\n| 150 | 100,8 | >5% |\\n| 150 | 120,8 | >5% |\\n| 200 | 24,5 | <1% |\\n| 200 | 50,1 | >5% |\\n| 200 | 120,8 | >5% |\\n| 250 | 9,7 | <1% |\\n| 250 | 40,1 | >5% |\\n| 300 | 10,1 | <1% |\\n| 300 | 35,1 | >5% |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It represents a specific thickness, where the film switches from being smooth to rough, for a given temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The downside is that it is impossible to produce smooth, thick films at these temperatures.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 100 °C or lower.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At approximately 100 °C .\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_3_figure_7.jpg","caption":"Figure 7. Thickness per cycle as a function of nitrogen purging for the reaction of tetrakis(dimethylamido)zirconium with water at a deposition temperature of $100^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-deposition/experimental-usecase/3/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/3/figure_7","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/Hausmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":542,"height":441,"image_format":"jpeg","image_sha256":"bb1f3ed9bbe532dd6856cf900be227b27e457757475b9e51fac3a1b4e0514be1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":542,"height":441}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart illustrates the relationship between deposition temperature and minimum purge time for two reagents: metal amide and water. The required purge times generally decrease with increasing temperature. Water generally requires longer purging times than metal amide.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition Temperature (°C) | Water: Minimum Purge Time (sec) | Metal amide: Minimum Purge Time (sec) |\\n|---|---|---|\\n| 50 | 600 | 300 |\\n| 100 | 300 | 122 |\\n| 150 | 93 | 31 |\\n| 200 | 15 | 7 |\\n| 250 | 7 | 7 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Water.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The curves converge at higher temperatures. This trend occurs because increasing thermal energy significantly accelerates the desorption rate of physisorbed molecules. Consequently, at high temperatures, the difference in physisorption strength between water and the metal amide becomes negligible, and both can be purged almost instantly.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Water is physisorbed more strongly (requires longer purging).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200 °C (or 200 °C - 250 °C).\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_39_fig_10.jpg","caption":"FIG. 10. (Color online) Integrated intensity of the time-resolved OES measurements of $\\mathrm{CO^{*}}$ $\\mathrm{H^{*}}$ and $\\mathrm{O^{*}}$ during the plasma step of the ALD cycle as a function of the number of successive $\\mathrm{Al(CH_3)_3}$ exposures used in the cycle.","id":"test/atomic-layer-deposition/experimental-usecase/39/fig_10","sample_id":"atomic-layer-deposition/experimental-usecase/39/fig_10","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/images/fig_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/Heil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":525,"image_format":"jpeg","image_sha256":"b53a858cf471defa1aab46af5684676866cf05fea233ad718c35565c7eace0cf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":672,"height":525}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the integrated intensity of OES signals at different wavelengths (777 nm - O*, 656 nm - H*, 519 nm - CO*) as a function of the number of Al(CH₃)₃ exposures per cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Al(CH3)3 exposures per cycle | Intensity (a.u.) 777 nm – O* | Intensity (a.u.) 656 nm – H* | Intensity (a.u.) 519 nm – CO* |\\n|---|---|---|---|\\n| 0 | 55 | 0 | 0 |\\n| 1 | 50 | 22 | 35 |\\n| 2 | 47 | 42 | 58 |\\n| 3 | 42 | 50 | 67 |\\n| 4 | 41 | 57 | 73 |\\n| 6 | 41 | 62 | 79 |\\n| 10 | 40 | 63 | 81 |\\n| 15 | 39 | 66 | 84 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"40.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"80.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"60.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The H* and CO* signals increase rapidly with increasing precursor dose at low numbers of exposures, reflecting increasing formation of reaction products, and both reach a plateau at approximately six exposures per cycle, indicating saturation of the Al(CH₃)₃ surface reactions. In contrast, the O* signal decreases with increasing precursor dose in the non-saturated regime and levels off at higher doses, consistent with increased oxygen consumption as more surface sites are occupied.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_51_fig_4.jpg","caption":"Fig. 4 $\\mathrm{MoO}_x$ thickness measured by spectral ellipsometry data plotted versus the number of ALD cycles","id":"test/atomic-layer-deposition/experimental-usecase/51/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/51/fig_4","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/Ziegler et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":645,"height":536,"image_format":"jpeg","image_sha256":"06cfd5eeb1dd35f2d32002d3786af7f19749a1bab2a0669599483d44dad43625","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":645,"height":536}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between deposition cycles and thickness for two different durations of oxygen exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| deposition cycles | thickness (nm) 1 second O2 | thickness (nm) 2 second O2 |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 10 | 1 | 1 |\\n| 20 | 1.5 | 1.5 |\\n| 30 | 2 | 2 |\\n| 40 | 3 | 3 |\\n| 50 | 4 | 4 |\\n| 60 | 4.5 | 4.5 |\\n| 70 | 5.5 | 5.5 |\\n| 80 | 5 | 5.5 |\\n| 90 | 6 | 6 |\\n| 100 | 6.5 | 7 |\\n| 110 | 7.5 | 7.5 |\\n| 120 | 8 | 8 |\\n| 130 | 9 | 9 |\\n| 140 | 10 | 10 |\\n| 150 | 10 | 10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The effect of 1 s (green) oxygen plasma exposure vs. 2 s (blue) exposure.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"150.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 10 nm for both samples.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The only difference between the two dataset is the duration of the oxygen plasma exposure, which was either 1 or 2 seconds. After 150 cycles, both samples have reached a thickness of about 10 nm. The trendlines are almost identical and seemingly run parallel, indicating that there is no significant effect on the deposition rate when going from 1 to 2 seconds of oxygen plasma exposure time. This tells us that 1 second is sufficient.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_51_fig_8.jpg","caption":"Fig. 8 Solar cell results plotted versus $\\mathrm{MoO}_x$ processes for 10- and 20-nm-thick oxide layers","id":"test/atomic-layer-deposition/experimental-usecase/51/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/51/fig_8","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multiple scatter plot"},{"panel_id":"d","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/Ziegler et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":1011,"height":912,"image_format":"jpeg","image_sha256":"0d0a49cfc73ad967726180e5cdd013d76fbee8494cc3ba1c73b162fa70d1d2dd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":8,"width":515,"height":392},{"panel_id":"b","x":522,"y":10,"width":486,"height":393},{"panel_id":"c","x":4,"y":361,"width":532,"height":547},{"panel_id":"d","x":480,"y":368,"width":528,"height":541}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Scatter plot for the current density (J_SC, in mA cm^-2) showing the performance of the 10 nm and 20 nm MoO layers, and the three different plasma exposures, including their mean values with standard deviation.\"},{\"panel_id\":\"b\",\"text\":\"Scatter plot for the open-circuit voltage (V_OC, in mV) showing the performance of the 10 nm and 20 nm MoO layers, and the three different plasma exposures, including their mean values with standard deviation.\"},{\"panel_id\":\"c\",\"text\":\"Scatter plot for the fill factor (FF) showing the performance of the 10 nm and 20 nm MoO layers, and the three different plasma exposures, including their mean values with standard deviation.\"},{\"panel_id\":\"d\",\"text\":\"Scatter plot for the power conversion efficiency (η) showing the performance of the 10 nm and 20 nm MoO layers, and the three different plasma exposures, including their mean values with standard deviation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | 10 nm mean | 10 nm best | 20 nm mean | 20 nm best |\\n|---|---|---|---|---|\\n| 2 second O2 | 30.1 | 30.3 | 28.6 | 28.8 | \\n| 2 second O2 & Ar | 30.2 | 30.6 | 29.3 | 29.5 |\\n| 1 second O2 | 30.7 | 30.6 | 28.5 | 28.8 |\"},{\"panel_id\":\"b\",\"text\":\"| Sample | 10 nm mean | 10 nm best | 20 nm mean | 20 nm best |\\n|---|---|---|---|---|\\n| 2 second O2 | 630 | 640 | 600 | 620 | \\n| 2 second O2 & Ar | 620 | 630 | 640 | 650 |\\n| 1 second O2 | 575 | 570 | 560 | 565 |\"},{\"panel_id\":\"c\",\"text\":\"| Sample | 10 nm mean | 10 nm best | 20 nm mean | 20 nm best |\\n|---|---|---|---|---|\\n| 2 second O2 | 53 | 55 | 50 | 51 | \\n| 2 second O2 & Ar | 51 | 54 | 51 | 55 |\\n| 1 second O2 | 40 | 41 | 35 | 37 |\"},{\"panel_id\":\"d\",\"text\":\"| Sample | 10 nm mean | 10 nm best | 20 nm mean | 20 nm best |\\n|---|---|---|---|---|\\n| 2 second O2 | 10 | 10.5 | 8.5 | 9 | \\n| 2 second O2 & Ar | 9.5 | 10 | 9.5 | 10 |\\n| 1 second O2 | 7 | 7 | 5.5 | 6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"On average, the 10 nm thick layers have a higher current density and a higher open-circuit voltage. Consequently, the 10 nm thick layers also have a higher fill factor (FF) and a higher power conversion efficiency (η). This means that, on average, the 10 nm thick layers outperform the 20 nm thick layers.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 2-second O₂ plasma process.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 650 mV.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 10.5 %, which was obtained for 10 nm thick layer, which had a 2 second O2 plasma exposure.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_61_figure_3.jpg","caption":"Figure 3. QMS ion current at $m / z$ ratios 16 and 17 for $\\mathrm{H}_2 / \\mathrm{N}_2$ plasmas as a function of $\\mathrm{H}_2$ fraction in the $\\mathrm{H}_2 / \\mathrm{N}_2$ mixture. The $\\mathrm{H}_2 / (\\mathrm{H}_2 + \\mathrm{N}_2)$ mixing ratios on the horizontal axis were determined using the ion currents at $m / z$ ratios 2 and 14, corresponding to $\\mathrm{H}_2^+$ and $\\mathrm{N}^+$ (see the Supporting Information), before igniting the plasma. The total chamber pressure was kept constant at $75\\mathrm{mTorr}$ .","id":"test/atomic-layer-deposition/experimental-usecase/61/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/61/figure_3","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/Vos et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"61","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":508,"height":430,"image_format":"jpeg","image_sha256":"4e7464397f384041fd2c3d86116db5b13fa93f6c90ba94b7cb43881c981e036d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":508,"height":430}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure displays the ion current intensity as a function of the gas phase ratio H₂/(N₂+H₂) for two distinct mass-to-charge ratios: m/z = 16 (likely NH₂⁺ or CH₄⁺) and m/z = 17 (likely NH₃⁺). For both ion species, the ion current increases as the H₂ fraction increases, reaching a peak near a ratio of 0.6. Beyond this point, the current begins to decline. This suggests that intermediate hydrogen enrichment in the plasma favours the generation of these species, while overly hydrogen-rich environments suppress their formation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| H₂/(N₂+H₂) | Ion Current @ m/z = 16 (10⁻⁹ A) | Ion Current @ m/z = 17 (10⁻⁹ A) |\\n|------------|-------------------------------|-------------------------------|\\n| 0.0 | 1.0 | 0.8 |\\n| 0.2 | 2.0 | 1.6 |\\n| 0.4 | 3.0 | 2.2 |\\n| 0.6 | 4.0 | 2.8 |\\n| 0.8 | 3.5 | 2.5 |\\n| 1.0 | 2.0 | 1.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the H₂ fraction increases, the ion currents for both m/z = 16 and m/z = 17 initially increase, suggesting enhanced formation of these species under hydrogen-rich conditions. The peak ion current is observed around a gas ratio of 0.6, beyond which the current declines. This implies an optimal range of hydrogen content for generating maximum ion signal intensity, likely due to competing formation and quenching reactions in the plasma phase.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Optimal H₂ fraction around 0.6 maximizes ion production, excess hydrogen suppresses ion generation, plasma chemistry is tunable via gas composition\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 0.6.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_65_fig_2.jpg","caption":"FIG. 2. Material properties as a function of plasma gas residence time $\\tau$ for $\\mathrm{SiN}_x$ films deposited at $200^{\\circ}\\mathrm{C}$ and $400^{\\circ}\\mathrm{C}$ using $10\\mathrm{s}$ $\\mathbf{N}_2$ plasma exposure at various total gas flows and plasma gas pressures. The films had a thickness of $20\\mathrm{nm}$ or higher. (a) Refractive index at $2\\mathrm{eV}$ for $\\mathrm{SiN}_x$ films deposited at $200^{\\circ}\\mathrm{C}$ . (b) Oxygen and carbon impurity content and (c) wet-etch rates in BHF for $\\mathrm{SiN}_x$ films deposited at $400^{\\circ}\\mathrm{C}$ . For the buffered etch, a stock solution was used of a 7:1 volume ratio of $40\\%$ $\\mathrm{NH_4F}$ in water and $49\\%$ HF in water. The various gas flows are indicated in the legend and the data points are labeled with the associated gas pressures. The lines serve as a guide to the eye.","id":"test/atomic-layer-deposition/experimental-usecase/65/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/65/fig_2","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/65/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/65/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/65/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/65/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"65","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":611,"height":850,"image_format":"jpeg","image_sha256":"efe30e630380839c20b97612ca6a4432e89e35b1e60036a7b5eef31fc0654de9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":609,"height":274},{"panel_id":"b","x":3,"y":277,"width":605,"height":271},{"panel_id":"c","x":2,"y":545,"width":605,"height":304}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The refractive index decreases with increasing plasma gas residence time at 200°C.\"},{\"panel_id\":\"b\",\"text\":\"The impurity content increases with increasing plasma gas residence time at 400°C.\"},{\"panel_id\":\"c\",\"text\":\"The wet-etch rate increases with increasing plasma gas residence time at 400°C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Plasma gas residence time (s) | Refractive Index |\\n|----------------|------------------|\\n| 0.1 | 1.9 |\\n| 0.4 | 1.85 |\\n| 0.6 | 1.77 |\\n| 0.8 | 1.75 |\\n| 1.1 | 1.73 |\"},{\"panel_id\":\"b\",\"text\":\"| Plasma gas residence time (s) | Impurity Content oxygen (at. %) |Impurity Content carbon (at. %) |\\n|------------------|-------------------------|-------------------------|\\n| 0.1 | 2.5 |0.5|\\n| 0.3 | 3.5 |0.5|\\n| 0.4 | 4 |1.5|\\n| 0.9 | 5 |1.5|\"},{\"panel_id\":\"c\",\"text\":\"| Plasma gas residence time (s) | Wet-etch Rate (nm/min) |\\n|------------------|------------------------|\\n| 0.1 | 0.5 |\\n| 0.3 | 1 |\\n| 0.4 | 1 |\\n| 0.9 | 2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If the refractive is a measure for the density, then films deposited with long gas residence times have a lower density and are therefore less etch resistant.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plasma pressure, the gas flows, and the plasma gas residence time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1 nm/min.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The argon gas flow and therefore the argon ions in the plasma can have an influence, where the ions can remove more impurities.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG2_a.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG2_a","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG2_a","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG2_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG2_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"not_found"},"width":670,"height":545,"image_format":"jpeg","image_sha256":"581781d562d4d341a28deeb03512aaae5f8b1ddba01bf3b933043a120751e040","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":670,"height":545}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This line chart presents the variation of Growth Per Cycle (GPC) with increasing plasma pulse time for two magnetic field strengths (850 mT and 1600 mT) under in-situ and ex-situ measurement conditions. GPC initially decreases rapidly with increasing pulse duration and plateaus near 0.05 nm/cy after about 50 seconds. Higher magnetic field strength (1600 mT) consistently results in slightly higher GPC than 850 mT across all time points, regardless of the measurement method.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Plasma Pulse (s) | GPC (nm/cy) |\\n|---|---|\\n| 0 | 0.11 |\\n| 10 | 0.105 |\\n| 20 | 0.07 |\\n| 30 | 0.06 |\\n| 40 | 0.055 |\\n| 50 | 0.05 |\\n| 60 | 0.05 |\\n| 80 | 0.05 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As plasma pulse time increases, surface reactions proceed more fully, leading to more complete removal or modification of surface species per cycle. This enhanced efficiency saturates after a certain exposure duration, leading to a plateau in GPC. Longer pulses also reduce the chance of unreacted precursors or incomplete surface activation, which initially contributed to higher GPC in shorter pulses.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1600 mT\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Marks etch saturation point, No GPC gain beyond 50 s, Optimizes cycle time for throughput and precision\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG2_d.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG2_d","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG2_d","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"d","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG2_d.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG2_d.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"d","first_classification_label":"multiple scatter plot","caption_source":"not_found"},"width":728,"height":556,"image_format":"jpeg","image_sha256":"ce5658d7fa0ea8d030f7abb86a48378a4d26172d99c24396871ae9193f080ede","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"d","x":0,"y":0,"width":728,"height":556}],"summarization":"[{\"panel_id\":\"d\",\"text\":\"This Raman spectra chart illustrates the vibrational modes of materials exposed to varying oxygen flow fractions through inductively coupled plasma (ICP). The three overlaid spectra correspond to O₂ flow fractions of 0.06, 0.29, and 0.53, with key Raman-active modes labeled along the spectral axis. Peaks corresponding to B₂g and A_g modes, as well as Al₂O₃, are clearly visible and consistent across all conditions, indicating that the overall structure remains stable across varying plasma environments. Minor differences in intensity at select peaks suggest possible changes in crystallinity or defect density influenced by oxygen content during deposition or treatment\"}]","data_extraction":"[{\"panel_id\":\"d\",\"text\":\"| Raman Shift (cm⁻¹) | Normalized Intensity (a.u.) |\\n|--------------------|-----------------------------|\\n| 100 | 0.05 |\\n| 200 | 1.00 |\\n| 300 | 0.60 |\\n| 400 | 0.40 |\\n| 500 | 0.55 |\\n| 600 | 0.60 |\\n| 700 | 0.50 |\\n| 800 | 0.45 |\\n| 900 | 0.50 |\\n| 1000 | 0.60 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the O₂ flow fraction from 0.06 to 0.53 does not significantly alter the positions of the Raman peaks, indicating that the chemical structure and vibrational modes remain largely consistent. However, subtle variations in peak intensities are observed. These changes suggest minor modifications in the material’s crystallinity or defect states, likely due to different oxidation conditions during treatment. For example, a higher flow fraction might reduce the presence of carbon-related defects or enhance oxide formation, subtly affecting Raman-active modes without drastically shifting peak positions\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"B₂g, A_g, and Al₂O₃ modes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"O₂ flow fraction through ICP 0.06, 0.29, 0.53\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG3_a.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG3_a","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG3_a","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG3_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG3_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"not_found"},"width":644,"height":517,"image_format":"jpeg","image_sha256":"098c8c172ca1bb618ba7586e7b7c28a77e141940b380ec51ea2d70b65d7fac70","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":644,"height":517}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents Raman spectra showing how the vibrational modes of a sample evolve with increasing inductively coupled plasma (ICP) power, ranging from 50 W to 950 W. The x-axis tracks Raman shift (in cm⁻¹), while the y-axis shows normalised intensity. Characteristic vibrational peaks are labeled with their symmetry assignments (e.g., B₂g, Ag), indicating specific phonon modes. Al₂O₃-associated features are also noted at key positions. As the ICP power increases, some peaks show a gradual reduction in intensity, suggesting potential structural or compositional changes under higher plasma energy. The consistent location of the phonon modes indicates the preserved crystal structure, while intensity differences reveal subtle variations due to processing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Raman Shift (cm⁻¹) | Normalized Intensity @ 50 W | 200 W | 400 W | 600 W | 950 W |\\n|--------------------|-----------------------------|--------|--------|--------|--------|\\n| 100 | 0.05 | 0.05 | 0.06 | 0.07 | 0.08 |\\n| 150 | 0.10 | 0.10 | 0.11 | 0.12 | 0.12 |\\n| 200 (B₂g) | 1.00 | 0.98 | 0.96 | 0.93 | 0.90 |\\n| 250 (Ag) | 0.55 | 0.53 | 0.50 | 0.48 | 0.45 |\\n| 300 (B₂g) | 0.70 | 0.68 | 0.66 | 0.63 | 0.60 |\\n| 350 (Ag) | 0.35 | 0.34 | 0.33 | 0.31 | 0.30 |\\n| 400 | 0.20 | 0.20 | 0.20 | 0.20 | 0.20 |\\n| 500 (Al₂O₃) | 0.50 | 0.50 | 0.52 | 0.55 | 0.58 |\\n| 600 (Ag) | 0.30 | 0.31 | 0.33 | 0.34 | 0.36 |\\n| 750 (Al₂O₃) | 0.10 | 0.10 | 0.12 | 0.14 | 0.16 |\\n| 950 | 0.08 | 0.08 | 0.09 | 0.10 | 0.11 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As ICP power increases, the overall intensity of the Raman peaks, particularly those associated with B₂g and Ag modes, tends to decrease slightly. This trend may reflect increased disorder or reduced crystallinity introduced by higher plasma exposure. However, the peak positions remain consistent, suggesting that the fundamental bonding structure is preserved. The Al₂O₃-related peaks also exhibit a modest increase in prominence at higher ICP powers, potentially indicating enhanced surface contributions or phase-specific signals.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"B₂g\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"50 W, 200 W, 400 W, 600 W, 950 W\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG5_b.jpg","caption":"FIG. 5. (a) Raman spectra of $\\mathrm{VO}_x$ deposited with varying $\\mathrm{O}_2$ flow fraction. (b) GPC as a function of $\\mathrm{O}_2$ flow fraction. The $y$ axis plotted on the same scale as Fig. 2(a) to highlight the small magnitude of change across the $\\mathrm{O}_2$ flow fraction range investigated.","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG5_b","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG5_b","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG5_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG5_b.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"b","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":630,"height":503,"image_format":"jpeg","image_sha256":"b3bd728e40e235df434a6181dffd20bed3fb396523e1c1a9e644438c6901b208","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":0,"width":630,"height":503}],"summarization":"[{\"panel_id\":\"b\",\"text\":\"The figure presents Growth Per Cycle (GPC) measurements as a function of the O₂:Ar flow ratio for both in-situ and ex-situ growth rate (GR) methods. Data points for both measurement types show nearly identical values across all tested flow ratios, indicating a high level of agreement between the two methods. Moreover, the GPC remains steady at approximately 0.06 nm/cycle, suggesting that variations in O₂:Ar ratio within the tested range have minimal effect on the deposition rate.\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"| O₂:Ar Flow Ratio | In-situ GR (nm/cy) | Ex-situ GR (nm/cy) |\\n|------------------|--------------------|---------------------|\\n| 0.05 | 0.062 | 0.063 |\\n| 0.10 | 0.060 | 0.061 |\\n| 0.30 | 0.057 | 0.058 |\\n| 0.50 | 0.054 | 0.055 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Comparing in-situ and ex-situ growth rate measurements helps validate the reliability and accuracy of growth monitoring techniques. In-situ methods provide real-time feedback, which is valuable for process control, while ex-situ measurements confirm final film thickness and uniformity. In this figure, the nearly identical GPC values from both approaches suggest that the in-situ method accurately reflects the actual film growth, thus confirming its suitability for real-time diagnostics and optimisation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.06 nm/cycle\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Stable growth under gas variation, Reduced flow sensitivity, Robust precursor chemistry, Scalable reproducible processing\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG7_d.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG7_d","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG7_d","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"d","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG7_d.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG7_d.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"d","first_classification_label":"multiple scatter plot","caption_source":"not_found"},"width":725,"height":559,"image_format":"jpeg","image_sha256":"16d3993ac549a8ab78809787aaf8f3d2fb6d12abeacfdaa0822852e0eded69da","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"d","x":0,"y":0,"width":725,"height":550}],"summarization":"[{\"panel_id\":\"d\",\"text\":\"This scatter plot illustrates the atomic percentages of carbon and nitrogen present on a surface following plasma exposure under different chamber pressures, ranging from 1000 to 5000 mTorr. The trends indicate relatively stable nitrogen incorporation between 1000–4000 mTorr, followed by a sharp increase at 5000 mTorr. Carbon follows a similar pattern but with more pronounced variability and a dramatic rise in atomic percentage at the highest pressure. These shifts align with a transition from inductively to capacitively coupled plasma modes, as indicated on the chart, implying that plasma coupling regime influences surface residue accumulation.\"}]","data_extraction":"[{\"panel_id\":\"d\",\"text\":\"| Pressure (mTorr) | Atomic % C | Atomic % N |\\n|---|---|---|\\n| 1000 | 1 | 0.5 |\\n| 2000 | 2 | 1 |\\n| 3000 | 3 | 1 |\\n| 4000 | 2 | 1 |\\n| 5000 | 11 | 6 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As chamber pressure increases from 1000 to 4000 mTorr, the atomic percentages of both carbon and nitrogen remain relatively low and stable, with minor fluctuations. However, at 5000 mTorr, there is a sharp increase in both elements, with carbon rising to 11% and nitrogen to 6%. This suggests a threshold effect, where a change in plasma conditions, specifically a shift to capacitively coupled operation, leads to greater surface contamination or retention of carbonaceous and nitrogenous species. This behavior underscores the importance of controlling pressure to manage surface purity during plasma-based processing\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"5000 mTorr\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"CCP may leave more C/N residue, Lower pressure , ICP , Pressure control\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG8_a.jpg","caption":"FIG. 8. (a) Atomic O density and (b) ion flux and plasma potential as a function of chamber pressure during plasma operation. Some conditions measured in both inductively and capacitively coupled modes.","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG8_a","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG8_a","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG8_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG8_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":628,"height":522,"image_format":"jpeg","image_sha256":"b289008bf107b3b51d534ec182977e5a7520668ee1208b64c5bda89cb5de07d6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":628,"height":522}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows how atomic oxygen density depends on pressure under two plasma conditions: inductively coupled and capacitively coupled. As pressure increases from 1000 to 5000 mTorr, atomic oxygen density rises significantly for the inductively coupled case, following an approximately logarithmic trend. Capacitive coupling data, shown only at higher pressures, yield slightly lower oxygen densities compared to the inductive case. This comparison underscores the enhanced dissociation and plasma density typically achieved in inductively coupled plasma sources.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pressure (mTorr) | Atomic O Density (Inductive) (atoms/m³) | Atomic O Density (Capacitive) (atoms/m³) |\\n|------------------|-------------------------------------------|--------------------------------------------|\\n| 1000 | 5 × 10¹⁹ | – |\\n| 2000 | 2 × 10²⁰ | – |\\n| 3000 | 4 × 10²⁰ | – |\\n| 4000 | 6 × 10²⁰ | 5 × 10²⁰ |\\n| 5000 | 7 × 10²⁰ | 6 × 10²⁰ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Atomic oxygen density increases with pressure for both inductively and capacitively coupled systems, though the inductively coupled configuration achieves higher densities overall. Between 1000 and 5000 mTorr, inductively coupled plasma results in a steady logarithmic increase in oxygen density, peaking at approximately 7 × 10²⁰ atoms/m³. The capacitively coupled data, available only at 4000 and 5000 mTorr, show slightly lower densities, suggesting reduced dissociation efficiency. This trend indicates that inductively coupled systems are more effective at generating reactive oxygen species under similar pressure conditions\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"6 × 10²⁰ atoms/m³.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Pressure (mTorr), Plasma coupling type (indcutive vs. capacitive)\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG9.jpg","caption":"FIG. 9. Plot of the ion flux and plasma potential, following the arguments of Boris et al. (Ref. 2). The data represent the measured experimental data from this work for inductively coupled plasmas (unless otherwise noted). Thin dashed black lines represent the lines of constant energy flux density. The bold red dashed lines represent the approximated critical energy flux density necessary for the onset of crystallization.","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG9","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG9","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":658,"height":528,"image_format":"jpeg","image_sha256":"a151f9369215768ec1d9ee7e5f9fddeb2a7b3166ae574cd5bb71e01cd3ef54ed","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":658,"height":528}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot describes the relationship between plasma potential and ion flux across a range of pressures, using different symbols to represent each pressure condition. A red dashed boundary line demarcates a critical energy flux density threshold that separates regimes where crystalline versus amorphous films are likely to form. Data points above this line (higher flux and potential) are associated with crystalline film growth, while those below correspond to amorphous outcomes. The plot also labels “Capacitively coupled” in the lower right, indicating a trend at higher potentials and lower fluxes. This figure helps define the operational window for achieving specific film crystallinity via control of plasma conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pressure (mTorr) | Plasma Potential (V) | Ion Flux (cm⁻²·s⁻¹) |\\n|------------------|----------------------|----------------------|\\n| 830 | ~18 | ~5×10¹⁵ |\\n| 1600 | ~28 | ~2×10¹⁶ |\\n| 2400 | ~45 | ~1.5×10¹⁶ |\\n| 3500 | ~70 | ~5×10¹⁶ |\\n| 4300 | ~100 | ~8×10¹⁶ |\\n| 5000 (hexagon) | ~250 | ~2×10¹⁷ |\\n| 5000 (circle) | ~900 | ~4×10¹⁷ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Crystalline film, Amorphous film, Critical energy flux density separates the two regimes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As plasma potential increases, the ion flux generally rises across all pressure conditions shown. This positive trend is nonlinear and captured more effectively using a log–log scale. Lower pressure markers (e.g., 830 mTorr) cluster at low plasma potentials and ion fluxes, while higher pressure conditions (e.g., 5000 mTorr) span into the high-potential, high-flux region. This suggests that both plasma potential and operating pressure jointly contribute to achieving higher ion flux densities.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 1 x 10^16 cm^-2 s^-1\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_16.jpg","caption":"Fig. 16. Comparison of simulated deposition rate with experiment [30] as a function of $\\mathrm{NH_3}$ flow rate using the reactor shown in Fig. 15.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_16","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_16","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_16.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":581,"height":397,"image_format":"jpeg","image_sha256":"54d63a307f1c3887be10782a9dd31326a0f2d02106c1606f7797b0628daff4c5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":5,"width":576,"height":391}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot represents the variation of deposition rate (microns/hr) of simulated GaN against experimental data from Thrush et al. for a Thomas Swan reactor as a function of ammonia flow. The deposition rate increases steadily from about 0.2 to 1.8 µm/hr with higher NH₃ flow, and the model matches this trend closely. The agreement shows that the reaction mechanism remains accurate even under the high-flow conditions typical of commercial reactors.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ammonia Flow (slm) | Deposition Rate (microns/hr) | |\\n|---|---|---|\\n| 2 | 0.2 | Experiment |\\n| 2 | 0.2 | Simulation |\\n| 3 | 0.5 | Experiment |\\n| 3 | 0.4 | Simulation |\\n| 4 | 0.7 | Experiment |\\n| 4 | 0.6 | Simulation |\\n| 5 | 0.9 | Experiment |\\n| 5 | 0.8 | Simulation |\\n| 6 | 1.0 | Experiment |\\n| 6 | 1.0 | Simulation |\\n| 7 | 1.2 | Experiment |\\n| 7 | 1.2 | Simulation |\\n| 8 | 1.4 | Experiment |\\n| 8 | 1.3 | Simulation |\\n| 9 | 1.6 | Experiment |\\n| 9 | 1.5 | Simulation |\\n| 10 | 1.7 | Experiment |\\n| 10 | -- | Simulation |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The required flow rate is approximately 7 slm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Thomas Swan reactor (likely a vertical rotating-disc type) might hit a practical limit sooner. While both show increasing rates with NH₃ flow, high-flow conditions in commercial reactors can lead to premature gas-phase reactions (particle formation) or excessive precursor waste, imposing a practical and economic ceiling on useful ammonia flow long before the stagnation-flow reactor, which is designed for fundamental study, would.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increase indicates the process is in a reaction-limited regime with respect to nitrogen. Higher ammonia flow increases the concentration of NH₃ and its decomposition products (like NH₂, NH) in the gas phase and at the surface. Since the surface has abundant Gallium (Ga) atoms, the rate-limiting step is the reaction of these nitrogen species with Ga, so their increased flux directly accelerates the deposition rate.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"YES, the close agreement between simulation and experiment across the operational range proves the model's predictive capability for this reactor and chemistry. Therefore, engineers can confidently use the simulation to interpolate or slightly extrapolate the required ammonia flow setting to hit the precise target growth rate of 1.5 µm/hr in a scaled or modified reactor design, saving time and cost on experimental trials.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_3_fig_5.jpg","caption":"FIG. 5. (Color online) Precursor distributions during the full cycle of flow simulations for: (a) TMA molar fraction for carrier gas flow rate of $20~\\mathrm{sccm}$ ; (b) TMA molar fraction for carrier gas flow rate of $200~\\mathrm{sccm}$ ; (c) water molar fraction for carrier gas flow rate of $20~\\mathrm{sccm}$ ; and (d) water molar fraction for carrier gas flow rate of $200~\\mathrm{sccm}$ . A is located in inlet area and C in the outlet area.","id":"test/atomic-layer-deposition/simulation-usecase/3/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/3/fig_5","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multiple scatter plot"},{"panel_id":"d","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/Dongqing Pan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1306,"height":1120,"image_format":"jpeg","image_sha256":"0abfd1562598df7a7d24f8295c85d37dd27de8fc822c74d20161afd507f70ad1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":570},{"panel_id":"b","x":658,"y":0,"width":638,"height":554},{"panel_id":"c","x":0,"y":564,"width":663,"height":551},{"panel_id":"d","x":659,"y":553,"width":634,"height":565}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"TMA molar fraction during a full ALD cycle at 20 sccm carrier gas flow. Inlet sample A responds fastest during the 0.015 s pulse, reaching saturation immediately. During the 10 s purge, TMA remains above 50% at most positions, indicating insufficient purging.\"},{\"panel_id\":\"b\",\"text\":\"TMA molar fraction at 200 sccm carrier gas. Pulsing behavior is similar to (a), but purging is much more effective with all samples dropping below 20% concentration.\"},{\"panel_id\":\"c\",\"text\":\"Water molar fraction at 20 sccm carrier gas. Water fills the chamber faster than TMA. High residual concentrations (>80%) persist after purging at positions B, C, D, E.\"},{\"panel_id\":\"d\",\"text\":\"Water molar fraction at 200 sccm carrier gas. Purging efficiency is greatly improved, with concentrations dropping significantly during the purge step.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Flow Time (s) | A (TMA Molar Fraction) | B (TMA Molar Fraction) | C (TMA Molar Fraction) | D (TMA Molar Fraction) | E (TMA Molar Fraction) |\\n|---|---|---|---|---|---|\\n| 0.000 | 0.60 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 0.001 | 0.90 | 0.00 | 0.05 | 0.00 | 0.10 |\\n| 0.002 | 1.00 | 0.02 | 0.18 | 0.02 | 0.22 |\\n| 0.003 | 1.00 | 0.05 | 0.28 | 0.05 | 0.40 |\\n| 0.004 | 1.00 | 0.08 | 0.40 | 0.08 | 0.58 |\\n| 0.006 | 1.00 | 0.15 | 0.60 | 0.15 | 0.80 |\\n| 0.008 | 1.00 | 0.35 | 0.85 | 0.35 | 0.92 |\\n| 0.010 | 1.00 | 0.50 | 0.95 | 0.50 | 0.98 |\\n| 0.012 | 1.00 | 0.60 | 0.98 | 0.60 | 1.00 |\\n| 0.014 | 1.00 | 0.65 | 0.98 | 0.65 | 1.00 |\\n| 10.015 | 0.45 | 0.70 | 0.80 | 0.70 | 0.75 |\\n| 10.016 | 0.02 | 0.72 | 0.78 | 0.72 | 0.65 |\\n| 10.017 | 0.00 | 0.70 | 0.65 | 0.70 | 0.40 |\\n| 10.018 | 0.00 | 0.60 | 0.40 | 0.60 | 0.20 |\\n| 10.019 | 0.00 | 0.40 | 0.20 | 0.40 | 0.10 |\\n| 10.020 | 0.00 | 0.20 | 0.10 | 0.20 | 0.05 |\\n| 10.022 | 0.00 | 0.05 | 0.02 | 0.05 | 0.00 |\"},{\"panel_id\":\"b\",\"text\":\"| Flow Time (s) | A (TMA Molar Fraction) | B (TMA Molar Fraction) | C (TMA Molar Fraction) | D (TMA Molar Fraction) | E (TMA Molar Fraction) |\\n|---|---|---|---|---|---|\\n| 0.000 | 0.60 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 0.001 | 0.90 | 0.00 | 0.05 | 0.00 | 0.10 |\\n| 0.003 | 1.00 | 0.05 | 0.28 | 0.05 | 0.40 |\\n| 0.005 | 1.00 | 0.15 | 0.55 | 0.15 | 0.70 |\\n| 0.007 | 1.00 | 0.35 | 0.85 | 0.35 | 0.90 |\\n| 0.009 | 1.00 | 0.50 | 0.95 | 0.50 | 0.98 |\\n| 0.011 | 1.00 | 0.60 | 1.00 | 0.60 | 1.00 |\\n| 0.013 | 1.00 | 0.65 | 1.00 | 0.65 | 1.00 |\\n| 10.015 | 0.10 | 0.75 | 1.00 | 0.75 | 0.80 |\\n| 10.016 | 0.00 | 0.78 | 0.95 | 0.78 | 0.60 |\\n| 10.017 | 0.00 | 0.75 | 0.80 | 0.75 | 0.30 |\\n| 10.018 | 0.00 | 0.60 | 0.40 | 0.60 | 0.15 |\\n| 10.019 | 0.00 | 0.35 | 0.10 | 0.35 | 0.05 |\\n| 10.020 | 0.00 | 0.15 | 0.02 | 0.15 | 0.00 |\\n| 10.022 | 0.00 | 0.02 | 0.00 | 0.02 | 0.00 |\"},{\"panel_id\":\"c\",\"text\":\"| Flow Time (s) | A (Water Molar Fraction) | B (Water Molar Fraction) | C (Water Molar Fraction) | D (Water Molar Fraction) | E (Water Molar Fraction) |\\n|---|---|---|---|---|---|\\n| 10.015 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 10.016 | 0.85 | 0.20 | 0.10 | 0.20 | 0.25 |\\n| 10.017 | 0.95 | 0.40 | 0.40 | 0.40 | 0.55 |\\n| 10.018 | 1.00 | 0.60 | 0.58 | 0.55 | 0.80 |\\n| 10.019 | 1.00 | 0.80 | 0.78 | 0.70 | 0.90 |\\n| 10.021 | 1.00 | 0.95 | 0.90 | 0.90 | 0.98 |\\n| 10.023 | 1.00 | 0.98 | 1.00 | 0.98 | 1.00 |\\n| 20.030 | 0.95 | 1.00 | 1.00 | 1.00 | 1.00 |\\n| 20.032 | 0.80 | 1.00 | 1.00 | 1.00 | 1.00 |\\n| 20.034 | 0.68 | 1.00 | 1.00 | 1.00 | 1.00 |\\n| 20.036 | 0.55 | 1.00 | 1.00 | 1.00 | 1.00 |\\n| 20.038 | 0.45 | 1.00 | 1.00 | 1.00 | 1.00 |\\n| 20.040 | 0.35 | 1.00 | 1.00 | 1.00 | 1.00 |\"},{\"panel_id\":\"d\",\"text\":\"| Flow Time (s) | A (Water Molar Fraction) | B (Water Molar Fraction) | C (Water Molar Fraction) | D (Water Molar Fraction) | E (Water Molar Fraction) |\\n|---|---|---|---|---|---|\\n| 10.015 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 10.016 | 0.85 | 0.25 | 0.10 | 0.22 | 0.28 |\\n| 10.017 | 0.98 | 0.40 | 0.30 | 0.38 | 0.58 |\\n| 10.018 | 1.00 | 0.60 | 0.55 | 0.55 | 0.82 |\\n| 10.020 | 1.00 | 0.85 | 0.78 | 0.80 | 0.95 |\\n| 10.022 | 1.00 | 0.95 | 0.95 | 0.95 | 1.00 |\\n| 20.030 | 0.02 | 1.00 | 1.00 | 1.00 | 1.00 |\\n| 20.032 | 0.00 | 1.00 | 0.90 | 0.95 | 0.85 |\\n| 20.034 | 0.00 | 0.92 | 0.78 | 0.85 | 0.55 |\\n| 20.036 | 0.00 | 0.60 | 0.40 | 0.70 | 0.25 |\\n| 20.038 | 0.00 | 0.45 | 0.15 | 0.48 | 0.05 |\\n| 20.040 | 0.00 | 0.38 | 0.10 | 0.42 | 0.00 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ALD half-cycle phases: pulsing is the brief 0.015 s precursor injection, purging is the ~10 s period when only carrier gas flows to remove excess precursor.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Sample A is closest to the precursor inlets, so it experiences the highest concentration first before precursors diffuse to other chamber regions.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Water vapor fills the chamber faster than TMA. Comparing panels (a) and (c), water reaches high molar fractions at all sample positions more quickly during the pulse. This is due to water's higher vapor pressure (23.68 Torr vs 9.43 Torr for TMA at 25°C) providing a stronger driving force for injection.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Carrier gas flow rate has little influence on the pulsing step since precursor injection is driven by vapor pressure. However, it strongly affects purging efficiency. At 20 sccm, significant precursor residue remains after purging (>50% for TMA, >80% for water at some positions), while 200 sccm effectively reduces concentrations below 20%.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_34_figure_3.jpg","caption":"Figure 3. a) $\\mathbb{D} / \\mathbb{D}^{\\prime}$ peak ratio of the graphene spectra for the different $\\mathsf{H}_{2}$ and $\\Omega_2$ plasma treatment times and b) broadening of the Raman G and 2D band as a function of the plasma treatment time, determined from the data in Figure 2.","id":"test/atomic-layer-deposition/simulation-usecase/34/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/34/figure_3","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1375,"height":525,"image_format":"jpeg","image_sha256":"2735e5b9c043003c4ac8f14ffd7655d81f539166ac7c55b9b3fc1d5c3e6a80af","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":692,"height":523},{"panel_id":"b","x":712,"y":6,"width":660,"height":242},{"panel_id":"c","x":711,"y":260,"width":662,"height":265}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the D/D' peak ratio for different exposure times of H₂ and O₂ plasmas.\"},{\"panel_id\":\"b\",\"text\":\"The chart displays the width of the Raman G band for different exposure times of H₂ and O₂ plasmas.\"},{\"panel_id\":\"c\",\"text\":\"The chart displays the width of the Raman 2D band for different exposure times of H₂ and O₂ plasmas.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Plasma time (min) | D/D' ratio H2 plasma | D/D' ratio O2 plasma |\\n|---|---|---|\\n| 1 | | 10 |\\n| 2 | 12.5 | 10 |\\n| 3 | 9.5 | 6.5 |\\n| 4 | 11 | |\\n| 5 | 10 | 5 |\\n| 6 | 10 | |\\n| 7 | | |\\n| 8 | 9.5 | |\"},{\"panel_id\":\"b\",\"text\":\"| Plasma Time (min) | Width G (cm⁻¹) H2 plasma | Width G (cm⁻¹) O2 plasma |\\n|---|---|---|\\n| 0 | 10 | 10 |\\n| 1 | | 20 |\\n| 2 | 10 | 25 |\\n| 3 | 15 | 40 |\\n| 4 | 15 | |\\n| 5 | 15 | 45 |\\n| 6 | 20 | |\\n| 7 | | |\\n| 8 | 25 | |\"},{\"panel_id\":\"c\",\"text\":\"| Plasma Time (min) | Width 2D (cm⁻¹) H2 plasma | Width 2D (cm⁻¹) O2 plasma |\\n|---|---|---|\\n| 0 | 35 | 35 |\\n| 1 | | 50 |\\n| 2 | 35 | 50 |\\n| 3 | 35 | 70 |\\n| 4 | 35 | |\\n| 5 | 40 | 110 |\\n| 6 | 40 | |\\n| 7 | | |\\n| 8 | 45 | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Exposure to H2 plasma predominantly leads to the functionalisation of graphene, where the D/D' ratio remains more or less constant around 10 as a function of plasma treatment time. This indicates that the relative amount of functionalization compared to defects stays constant even though the graphene is slowly being etched by the H2 plasma.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 6.5.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The changes are minimal compared to O2 plasma and significant broadening only occurs 4 minutes of H2 plasma exposure.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The effect of H2 plasma exposure is minimal, similar to the Raman G band. However, here significant broadening only occurs after 7 minutes of H2 plasma exposure.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_34_figure_8.jpg","caption":"Figure 8. Contact resistance determined from the CTLM measurements as a function of the $\\mathrm{H}_{2}$ or $\\mathrm{O}_{2}$ plasma treatment time. A comparison is made between the devices synthesized by AS-ALD and plasma functionalization and EBL and e-beam evaporation (PVD).","id":"test/atomic-layer-deposition/simulation-usecase/34/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/34/figure_8","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":666,"height":495,"image_format":"jpeg","image_sha256":"e60e22b820f702308b3907e5ba670a7adb3f55f76701d9de144e1afeba87489d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":666,"height":495}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between plasma exposure time and contact resistance for samples treated with O₂ Plasma ALD, H₂ Plasma ALD, and H₂ Plasma PVD.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Plasma Exposure Time (min) | Contact Resistance (Ωµm) O2 Plasma ALD | Contact Resistance (Ωµm) H2 Plasma ALD | Contact Resistance (Ωµm) H2 Plasma PVD |\\n|---|---|---|---|\\n| 0 | | | 11500 |\\n| 5 | 4000 | 1000 | 4000 |\\n| 7 | | 500 | |\\n| 10 | 1500 | 1500 | |\\n| 15 | 1500 | 500 | |\\n| 20 | | 500 | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"11.5 ± 0.4 kΩ µm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The contact resistance is relatively constant around 0.5 - 1 kΩ µm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 4 kΩ µm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Generally, all samples show improved contact resistance when exposed to plasma. The surface groups created by the plasma treatment enhance the transport of charge carriers from the metal to the graphene through an increase of the number of chemical bonds between the metal and the graphene. The additional improvement observed for the ALD created contacts could be due to the improved wetting interaction of the deposited Pt with the underlying graphene or an improved Pt morphology due to the use of ALD. Additionally, as opposed to Pt PVD, for the creation of the Pt ALD contacts, a Ti adhesion layer is no longer required. This could also have a positive effect on the metal-graphene interaction, due to the different work function and interaction strength of Ti compared to Pt.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_1_figure_8.jpg","caption":"Figure 8. Graphs showing comparison of number of publications in ALD versus ALEt. Plot constructed from a SCOPUS database search for the terms \"Atomic Layer Etching\" and \"Atomic Layer Depository\", retrieved on December $3^{\\mathrm{rd}}$ 2014.","id":"test/atomic-layer-etching/experimental-usecase/1/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/1/figure_8","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/Atomic Layer Etching An Industry Perspective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":675,"height":572,"image_format":"jpeg","image_sha256":"3a8a7c9065721d27426a72ad989c007c4f0829a4ac5c51914553b89dab443bf9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":572}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_8.jpg","caption":"Figure 8. AlN film thickness vs number of $\\mathrm{XeF}_2 / \\mathrm{BCl}_3$ cycles on single-crystal AlN film for various temperatures. Temperature-dependent etch rates vary from $0.19\\mathrm{\\AA}$ cycle at $212^{\\circ}C$ to $0.93\\mathrm{\\AA}/$ cycle at $298^{\\circ}C$","id":"test/atomic-layer-etching/experimental-usecase/20/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_8","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":658,"height":570,"image_format":"jpeg","image_sha256":"f23a0549a70c0db1d7bc934ab3dd6d5d75cd6d2a42cf8a1acc61f8abbb2eb6c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":656,"height":567}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the thickness loss of AlN as a function of XeF₂/BCl₃ cycles at various temperatures. For all cases, the thickness decreases as the number of cycles increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| XeF₂/BCl₃ Cycles | 212°C | 230°C | 255°C | 263°C | 280°C | 298°C |\\n| --- | --- | --- | --- | --- | --- | --- |\\n| 0 | 0 | 0 | 0 | 0 | 0 | 0 |\\n| 10 | 0 | -5 | -6 | -5 | -6 | -7 |\\n| 20 | -2 | -10 | -12 | -12 | -13 | -17 |\\n| 30 | -4 | -16 | -16 | -19 | -21 | -27 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There is a linear relationship between these two variables.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The AlN thickness decreases as the number of cycles increases for all temperatures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 212 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It can be concluded that the AlN etch rate can be controlled by the XeF2 and BCl3 exposures.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_36d51786c634f31a43a7df7d794ccd77ac03e8f8ed581d6cf1e61c63269b5f7f.jpg","caption":"Fig. 5a shows the GIXRD results for the initial CoO thin film. The as","id":"test/atomic-layer-etching/experimental-usecase/21/36d51786c634f31a43a7df7d794ccd77ac03e8f8ed581d6cf1e61c63269b5f7f","sample_id":"atomic-layer-etching/experimental-usecase/21/36d51786c634f31a43a7df7d794ccd77ac03e8f8ed581d6cf1e61c63269b5f7f","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/36d51786c634f31a43a7df7d794ccd77ac03e8f8ed581d6cf1e61c63269b5f7f.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/36d51786c634f31a43a7df7d794ccd77ac03e8f8ed581d6cf1e61c63269b5f7f.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":656,"height":570,"image_format":"jpeg","image_sha256":"83baf17b43258fd97e797d283a73834e8bf9a436ad86410818e9de0e0d9677f2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":5,"width":651,"height":563}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the change in CoOx thickness over cycles at two temperatures, 200 °C and 250 °C. The rate of change are 0.09 Å/cycle and 0.43 Å/cycle for 200 °C and 250 °C, respectively.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | CoOx Thickness Change (Å) 200 °C | CoOx Thickness Change (Å) 250 °C |\\n| --- | --- | --- |\\n| 0 | 0 | 0 |\\n| 5 | 0 | -2.0 |\\n| 10 | -1.0 | -4.0 |\\n| 15 | -1.8 | -6.0 |\\n| 20 | -2.0 | -8.0 |\\n| 25 | -2.5 | -10.0 |\\n| 30 | -2.8 | -12.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The change in the CoOx thickness is evaluated as a function of the temperature and the number of cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thickness of the CoOx decreases as the number of cycles increases for both temperatures, 200 °C and 250 °C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the figure, a higher temperature (i. e. 250 °C) produces greater changes in the CoOx thickness, reaching an etch per cycle value of 0.43 Å/cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At this temperature, it is possible to achieve a higher etch rate of 0.43 Å/cycle compared to 0.09 Å/cycle at 200 °C.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_2.jpg","caption":"Fig. 2. CoO film thickness change versus number of Hacac doses at 250 and $270^{\\circ}C$ Dashed lines show the linear fits.","id":"test/atomic-layer-etching/experimental-usecase/21/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_2","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":667,"height":566,"image_format":"jpeg","image_sha256":"4b4ecea448b12b58b199f246387288fd263dde088b7a4306fe979ac13058c766","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":1,"width":660,"height":561}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the change in CoOx thickness over the number of Hacac doses at two different temperatures, 250°C and 275°C. The data points are represented by blue squares and red circles respectively, with black dashed lines indicating the trend and the etch rate per dose (0.08 Å/dose at 250°C and 0.09 Å/dose at 275°C).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Hacac Doses | CoOx Thickness Change (Å) 250 °C | CoOx Thickness Change (Å) 275 °C |\\n| --- | --- | --- |\\n| 0 | 0 | 0 |\\n| 20 | -1.5 | -6.4 |\\n| 40 | -4.0 | -8.4 |\\n| 60 | -4.8 | -9.2 |\\n| 80 | -8.0 | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Spectroscopic ellipsometry is used for thickness measurements in this case.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of Hacac doses increases, it can be seen that the CoO thickness decreases for both temperatures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The highest value, with only a slight difference, is 0.09 Å/dose at 275 °C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Increasing the temperature doesn't result in a significant difference in etch per dose; the film thickness is similar in both cases.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_12.jpg","caption":"Figure 12. $\\mathrm{WO}_3$ and W thickness versus number of half-cycles during W ALE under self-limiting conditions using $\\mathrm{O}_2 / \\mathrm{O}_3,$ $\\mathrm{BCl}_3,$ and HF as reactants at $207^{\\circ}C$ a $\\mathrm{WO}_3$ thickness showing oscillation of $\\mathrm{WO}_3$ thickness after $\\mathrm{O}_2 / \\mathrm{O}_3$ exposure and $\\mathrm{BCl}_3 / \\mathrm{HF}$ reaction.b)W thickness showing linear reduction versus number of half-cycles with an etch rate of $2.44\\mathrm{\\AA}/$ cycle.","id":"test/atomic-layer-etching/experimental-usecase/25/figure_12","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_12","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":673,"height":900,"image_format":"jpeg","image_sha256":"810c10b1e6c38485015233458318ac1fced1ff4ea0cf6f11451c91edbb2c1be2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":1,"width":665,"height":426},{"panel_id":"b","x":2,"y":431,"width":663,"height":464}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the thickness of WO₃ after exposure to O₂/O₃ and BCl₃/HF as a function of the number of half-cycles.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the thickness of W as a function of the number of half-cycles, with an etch rate of 2.44 Å/cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Half-Cycles | WO₃ Thickness (Å) After O₂/O₃ | WO₃ Thickness (Å) After BCl₃/HF |\\n|---|---|---|\\n| 0 | 35 | 27 |\\n| 10 | 42 | 36 |\\n| 20 | 37 | 30 |\\n| 30 | 32 | 25 |\\n| 40 | 29 | 22 |\\n| 50 | 26 | 21 |\\n| 60 | 25 | 17 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Half-Cycles | W Thickness (Å) |\\n|---|---|\\n| 0 | 230 |\\n| 10 | 215 |\\n| 20 | 200 |\\n| 30 | 185 |\\n| 40 | 170 |\\n| 50 | 160 |\\n| 60 | 150 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems that in the initial stages of the process, there still is an increase in thickness of WO3, but it seems to settle towards a constant thickness after 50 half cycles\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, it does not. It could be that the initial thickness of W enables the modification step to have a larger effect, whilst the etching of W remains relatively constant.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2800, 329, and 3150 mTorr s respectively\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"By determining the slope and multiplying this with 2, as the x-axis denotes half-cycles and not full cycles.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_13.jpg","caption":"Figure 13. Enlargement of $\\mathrm{WO}_3$ thickness versus number of halfcycles showing increase and decrease of $\\mathrm{WO}_3$ thickness after $\\mathrm{O}_2 / \\mathrm{O}_3$ exposure and $\\mathrm{BCl}_3 / \\mathrm{HF}$ reaction.","id":"test/atomic-layer-etching/experimental-usecase/25/figure_13","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_13","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_13.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":672,"height":567,"image_format":"jpeg","image_sha256":"7f6324f7d779c8a9d76846d48ee80aa9d526ac49316d381947282df470575c25","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":665,"height":560}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the thickness of WO₃ after exposure to O₂/O₃ and BCl₃/HF at 207°C, measured in Ångströms, as a function of the number of half-cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Half-Cycles | WO₃ Thickness (Å) |\\n|---|---|\\n| 39 | 21.5 |\\n| 40 | 28.93 |\\n| 41 | 21.29 |\\n| 42 | 28.46 |\\n| 43 | 20.58 |\\n| 44 | 27.57 |\\n| 45 | 20.52 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increase in thickness comes from the fact that the top layer is transformed into WO3, so added to the top.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In this case the average of a half cycle is negative, indicating that there is more WO3 removed than added every ALE cycle. If the W film would be infinitely thick, this would result in no complete etch, so in the ideal case there is no slope.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"20.5 angstrom\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.33 angstrom per cycle\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_5.jpg","caption":"Figure 5. $\\mathrm{B}_2\\mathrm{O}_3$ thickness versus number of HF exposures showing spontaneous etching of $\\mathrm{B}_2\\mathrm{O}_3$ film at $207^{\\circ}\\mathrm{C}$ . HF exposure was 100 mTorr s, and $\\mathrm{B}_2\\mathrm{O}_3$ etch rate is $\\sim 2\\mathrm{\\AA}$ per HF exposure.","id":"test/atomic-layer-etching/experimental-usecase/25/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_5","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":672,"height":547,"image_format":"jpeg","image_sha256":"ac2cf95c675da486fd944e7a5d896360a8ab1eb623c367286518232a931861c6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":665,"height":542}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the thickness changes of B2O3 after HF exposures at 207°C. The blue squares represent measurements taken before the HF dose, while the red circles represent those taken after the HF dose.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of HF Exposures | Before HF Dose | After HF Dose |\\n|---|---|---|\\n| 1 | 540 | 538 |\\n| 2 | 538 | 536 |\\n| 3 | 536 | 534 |\\n| 4 | 534 | 532 |\\n| 5 | 532 | 530 |\\n| 6 | 530 | 530 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 angstrom.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Artificially grown, the B2O3 layer on top of the WO3 is not that thick as it is a result of the monolayer modification.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"53 nm.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_6.jpg","caption":"Figure 6. $\\mathrm{WO}_3$ etch rate versus reactant exposure during $\\mathrm{WO}_3$ ALE at $207^{\\circ}\\mathrm{C}$ . (a) $\\mathrm{BCl}_3$ exposure was varied with HF exposure held at 200 mTorr s. (b) HF exposure was varied with $\\mathrm{BCl}_3$ exposure held at 327 mTorr s. Figure 7. $\\mathrm{WO}_3$ thickness versus number of half-cycles during $\\mathrm{WO}_3$ ALE at $207^{\\circ}\\mathrm{C}$ under self-limiting conditions.","id":"test/atomic-layer-etching/experimental-usecase/25/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_6","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":672,"height":547,"image_format":"jpeg","image_sha256":"6e040408d19ed409a7800b52a9c70094617cf661b76962255add9be6cb1bc671","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":668,"height":540}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the thickness of WO₃ after exposure to BCl₃ and HF doses at 207°C, plotted against the number of half-cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Half-Cycles | WO₃ Thickness (Å) |\\n|---|---|\\n| 5 | 97 |\\n| 10 | 84 |\\n| 15 | 75 |\\n| 20 | 65 |\\n| 25 | 55 |\\n| 30 | 48 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This can be determined by calculating the slope and multiplying it with two, as the x-axis shows the number of half-cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"207 degrees celcius.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A technique that can be used to determine the thickness of thin films is ellipsometry.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the decrease in thickness is linear with respect to number of cycles.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_8.jpg","caption":"Figure 8. Analysis of $\\mathrm{WO}_3$ thickness change after $\\mathrm{BCl}_3$ exposure and HF exposure during $\\mathrm{WO}_3$ ALE at $207^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-etching/experimental-usecase/25/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_8","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":675,"height":561,"image_format":"jpeg","image_sha256":"b8dfd236a9ff4cecf3a994801ae2bb9d5af8b752fab6ef4478cd00153bd43523","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":670,"height":554}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot illustrates the thickness of WO₃ at various numbers of half-cycles, with specific arrows indicating etching, conversion, and removal processes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Half-Cycles | WO₃ Thickness (Å) |\\n|---|---|\\n| 9 | 88 |\\n| 10 | 86.5 |\\n| 11 | 84 |\\n| 12 | 82.5 |\\n| 13 | 80 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The full etch step is composed of the conversion of WO3 to B2O3 and the removal of this B2O3 top level.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2.5 angstrom\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It should be, but the graph is misleading. It could be that HF is removed upon HF exposure, but also WO3 is removed according to the y-axis.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"around 4 angstrom per cycle\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_9.jpg","caption":"Figure 9. $\\mathrm{WO}_3$ thickness versus number of cycles for $\\mathrm{WO}_3$ ALE at 128, 160, 196, and $207^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-etching/experimental-usecase/25/figure_9","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_9","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":670,"height":550,"image_format":"jpeg","image_sha256":"7c5f62693b78ca93a560d65ce09273b82e0351663bda5404e3dbee448e8f5a87","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":665,"height":543}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the thickness of WO₃ as a function of the number of cycles at different temperatures (128°C, 160°C, 196°C, and 207°C). The thickness decreases linearly with increasing cycle number for each temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | 128°C | 160°C | 196°C | 207°C |\\n|------------------|-------|-------|-------|-------|\\n| 0 | 140 | 140 | 140 | 140 |\\n| 5 | 138 | 130 | 128 | 120 |\\n| 10 | 136 | 120 | 116 | 100 |\\n| 15 | 132 | 110 | 102 | 80 |\\n| 20 | 130 | 100 | 90 | 60 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The highest temperature will also result in the highest EPC, this can be concluded based on the slopes of the different lines.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10 angstrom per cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This will be determined by the height of the EPC. This is the lowest for the process at 128 degrees. This process will then also result in the most control.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_27_fig_1.jpg","caption":"Fig. 1. The etch depth of $\\mathrm{Al}_2\\mathrm{O}_3$ per cycle (A/cycle) by Ar sputtering and ALET, measured as a function of 1st grid voltage from 50 to $150\\mathrm{V}$ for the $\\mathrm{Ar}^+$ ion beam source. $\\mathrm{BCl}_3$ gas flow rate of $100~\\mathrm{sccm}$ was used during the 1st adsorption step.","id":"test/atomic-layer-etching/experimental-usecase/27/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/27/fig_1","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/Atomic layer etching of Al2O3 using BCl3Ar.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":597,"height":447,"image_format":"jpeg","image_sha256":"4d4c94e9fcc1328752117607baa164e5102ed96ed8bb3472866ae55e202748dc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":4,"width":589,"height":444}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the etch rate (in A/cycle) at various first grid voltages (in V) for both conditions: without BCl3 adsorption and with BCl3 adsorption.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 1st Grid Voltage (V) | Etch Rate (A / cycle) without BCl3 adsorption | Etch Rate (A / cycle) with BCl3 adsorption |\\n|---|---|---|\\n| 50 | 0.0 | 0.0 |\\n| 75 | 0.0 | 0.25 |\\n| 100 | 0.0 | 1.0 |\\n| 125 | 0.5 | 1.25 |\\n| 150 | 1.0 | 1.75 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.0 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.0 Å/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Without BCl3 adsorption, material is only being etched at grid voltages higher than 105 V, which corresponds to the Al2O3 substrate itself being etched. With BCl3 adsorption, an increase in etch rate is observed from 0 to 95 V. This means that etch rate is constant between 95 and 105 V. In this small region, only the chemisorbed layer (which is created during BCl3 exposure) is etched, meaning that the process meets the self-limiting reaction requirement between 95 and 105 V, so future experiments will be operated in this range.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_31_fig_2.jpg","caption":"Fig. 2. Etch rates for $\\mathrm{HfO_2}$ , $\\mathrm{ZrO_2}$ , and $\\mathrm{Al_2O_3}$ films with respect to (a) substrate temperature, (b) RF bias power, (c) Hhfac pulse time, and (d) O radical pulse time.","id":"test/atomic-layer-etching/experimental-usecase/31/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/31/fig_2","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multiple scatter plot"},{"panel_id":"d","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/Atomic layer etching of high-k oxide thin films.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":1014,"height":1239,"image_format":"jpeg","image_sha256":"0eb3a2d08e868e59bf4a10836b9efaa3040505e07ff478899d3d68d69efefc70","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":41,"y":20,"width":449,"height":585},{"panel_id":"b","x":560,"y":20,"width":453,"height":578},{"panel_id":"c","x":41,"y":666,"width":449,"height":570},{"panel_id":"d","x":562,"y":666,"width":451,"height":568}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This multi-panel figure evaluates etch per cycle (EPC) for HfO₂, ZrO₂, and Al₂O₃ across four experimental variables relevant to ALE optimisation. Panel (a) shows that EPC increases with substrate temperature, particularly for HfO₂, which reaches >3 Å/cycle by 400 °C, while Al₂O₃ remains inert across the temperature range. Panel (b) reveals an \\\"ALE window\\\" for HfO₂ etching as RF bias power increases, with ZrO₂ showing moderate reactivity and Al₂O₃ remaining largely unaffected. Panels (c) and (d) display saturation-like behavior for Hhfac exposure and O radical exposure, respectively, again showing clear selectivity of the process for HfO₂ and ZrO₂ over Al₂O₃. These trends confirm process controllability and material selectivity critical for high-precision ALE.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | HfO₂ (Å/cycle) | ZrO₂ (Å/cycle) | Al₂O₃ (Å/cycle) |\\n|------------------|----------------|----------------|-----------------|\\n| 100 | 0.5 | 0.2 | 0.0 |\\n| 150 | 1.0 | 0.3 | 0.0 |\\n| 200 | 1.5 | 0.5 | 0.0 |\\n| 250 | 2.0 | 0.7 | 0.0 |\\n| 300 | 2.5 | 0.8 | 0.0 |\\n| 350 | 3.0 | 0.9 | 0.0 |\\n| 400 | 3.2 | 1.0 | 0.0 |\"},{\"panel_id\":\"b\",\"text\":\"| RF Bias Power (W) | HfO₂ (Å/cycle) | ZrO₂ (Å/cycle) | Al₂O₃ (Å/cycle) |\\n|-------------------|----------------|----------------|-----------------|\\n| 0 | 0.5 | 0.2 | 0.0 |\\n| 50 | 1.0 | 0.5 | 0.0 |\\n| 100 | 2.0 | 0.8 | 0.0 |\\n| 150 | 3.0 | 1.0 | 0.0 |\\n| 200 | 3.5 | 1.2 | 0.0 |\\n| 250 | 4.0 | 1.5 | 0.0 |\"},{\"panel_id\":\"c\",\"text\":\"| Hhfac Exposure (sec) | HfO₂ (Å/cycle) | ZrO₂ (Å/cycle) | Al₂O₃ (Å/cycle) |\\n|----------------------|----------------|----------------|-----------------|\\n| 0 | 0.0 | 0.0 | 0.0 |\\n| 2 | 1.0 | 0.5 | 0.0 |\\n| 4 | 2.0 | 0.8 | 0.0 |\\n| 6 | 2.8 | 1.0 | 0.0 |\\n| 8 | 3.0 | 1.2 | 0.0 |\\n| 10 | 3.1 | 1.3 | 0.0 |\"},{\"panel_id\":\"d\",\"text\":\"| O Radical Exposure (sec) | HfO₂ (Å/cycle) | ZrO₂ (Å/cycle) | Al₂O₃ (Å/cycle) |\\n|--------------------------|----------------|----------------|-----------------|\\n| 0 | 0.0 | 0.0 | 0.0 |\\n| 5 | 1.5 | 0.7 | 0.0 |\\n| 10 | 2.5 | 1.0 | 0.1 |\\n| 15 | 3.0 | 1.2 | 0.1 |\\n| 20 | 3.2 | 1.3 | 0.1 |\\n| 25 | 3.3 | 1.4 | 0.1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"EPC increases significantly for HfO₂ and to a lesser extent for ZrO₂ as temperature, RF power, Hhfac exposure, and O radical exposure increase, indicating that both materials are etched efficiently. In contrast, Al₂O₃ remains nearly unaffected under all conditions, suggesting excellent selectivity. The trends indicate that the ALE process can be tuned to target high-k materials like HfO₂ and ZrO₂ while preserving low-k or etch-resistant materials like Al₂O₃, which is valuable for precise pattern transfer in multilayer device architectures\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HfO₂.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Temperature, RF bias power, Hhfac exposure time, O radical exposure time.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_31_fig_6.jpg","caption":"Fig. 6. Thickness variation of the $\\mathrm{HfO_2}$ film as a function of ALE cycles under repeated injections of Hhfac gas/ $\\mathrm{O_2}$ plasma and Hhfac plasma/ $\\mathrm{O_2}$ plasma at a substrate temperature of $100^{\\circ}\\mathrm{C}$ CCP discharges at a frequency of $13.56\\mathrm{MHz}$ are applied via an RF power generator.","id":"test/atomic-layer-etching/experimental-usecase/31/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/31/fig_6","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/Atomic layer etching of high-k oxide thin films.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":589,"height":605,"image_format":"jpeg","image_sha256":"1fe7569fe960f2538553a71676e8e18a2ddbb9cdeac58848eaf20a05de487b47","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":589,"height":605}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares the effect of using Hhfac gas versus Hhfac plasma in combination with O₂ plasma on the etching behavior of HfO₂ at 100 °C. When Hhfac gas is used, there is no measurable reduction in HfO₂ thickness over 50 cycles, indicating zero etch rate. In contrast, using Hhfac plasma results in a clear linear reduction in film thickness, with an etch rate of 1.49 Å/cycle. This difference highlights the critical role of precursor activation (via plasma) in enabling efficient etching under mild thermal conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Process Cycles | HfO₂ Thickness (nm) – Hhfac gas + O₂ plasma | HfO₂ Thickness (nm) – Hhfac plasma + O₂ plasma |\\n|--------------------------|---------------------------------------------|------------------------------------------------|\\n| 0 | 15.0 | 15.0 |\\n| 10 | 15.0 | 13.5 |\\n| 20 | 15.0 | 12.0 |\\n| 30 | 15.0 | 10.5 |\\n| 40 | 15.0 | 9.0 |\\n| 50 | 15.0 | 7.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The use of Hhfac plasma in combination with O₂ plasma leads to a significant reduction in HfO₂ film thickness, demonstrating an etch rate of 1.49 Å/cycle. In contrast, using Hhfac in gas form under the same conditions results in no measurable thickness change, corresponding to an etch rate of 0 Å/cycle. This comparison highlights that plasma activation of the precursor is essential to initiate etching at low temperatures, likely due to enhanced surface reactivity and fragmentation of the Hhfac ligand under plasma conditions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.49 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hhfac gas + O₂ plasma, Hhfac plasma + O₂ plasma\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_37_fig_4.jpg","caption":"FIG. 4. The thickness of the $\\mathrm{TiO_2}$ layer on Si-OH and Si-H surfaces for $90\\mathrm{ms}$ , $180\\mathrm{ms}$ , and $270\\mathrm{ms}$ $\\mathrm{TiCl_4 / H_2O}$ dosing times as measured by in situ ellipsometry.","id":"test/atomic-layer-etching/experimental-usecase/37/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/37/fig_4","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/Effect of reactant dosing on selectivity during area-selective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":572,"image_format":"jpeg","image_sha256":"e5bf2bdf456ac75e5d7bf80c22baf8e3d36e59f181f57317c7d66a7b68cd0e24","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":672,"height":572}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the thickness of SiOH and SiH layers as a function of cycles, with different exposure times of TiCl4, Ar and H2O.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle | Thickness (nm) SiOH 0.09 / 45 / 0.09 / 45 s | Thickness (nm) SiOH 0.18 / 45 / 0.18 / 45 s | Thickness (nm) SiOH 0.27 / 45 / 0.27 / 45 s | Thickness (nm) SiH 0.09 / 45 / 0.09 / 45 s | Thickness (nm) SiH 0.18 / 45 / 0.18 / 45 s | Thickness (nm) SiH 0.27 / 45 / 0.27 / 45 s |\\n|---|---|---|---|---|---|---|\\n| 0 | 0 | 0 | 0 | 0 | 0 | 0 |\\n| 25 | 1 | 1 | 1 | 0.1 | 0.1 | 0.1 |\\n| 50 | 2 | 2 | 2 | 0.5 | 0.5 | 0.5 |\\n| 75 | 3.5 | 3.5 | 3.5 | 1 | 1 | 1 |\\n| 100 | 5 | 5 | 5 | 2.5 | 2.5 | 2.5 |\\n| 125 | 6.5 | 6.5 | 6.5 | 3.5 | 3.5 | 3.5 |\\n| 150 | 7.5 | 7.5 | 7.5 | 5.5 | 5.5 | 5.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiO2 and Si substrates, with Si-OH and Si-H surface groups, respectively.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 5 nm for all three experimental setups.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 2 nm for all three experimental setups.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"On Si-H substrates, all dosing conditions exhibit a nucleation delay of approximately 25 cycles, followed by an acceleration to a steady growth rate of about 0.05 nm per cycle. On Si–OH substrates, the three dosing conditions also produce nearly identical growth behaviour, with approximately 8 nm of TiO₂ deposited after 150 cycles, and the lowest dosing condition yielding slightly lower thickness consistent with near-saturation dosing. Applying the selectivity definition shows that a selectivity value of 0.9 corresponds to a TiO₂ thickness of about 1.5 nm on the growth surface for all dosing conditions. Overall, the figure demonstrates that near- and over-saturated H₂O dosing does not significantly alter the nucleation delay on Si–H surfaces nor the achievable selectivity window.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_37_fig_5.jpg","caption":"FIG. 5. The thickness of the $\\mathrm{TiO_2}$ layer on $\\mathrm{Si - H}$ as a function of the number of super-cycles using $\\mathrm{TiCl_4 / H_2O}$ dosing times of 90, 180, and $270~\\mathrm{ms}$ as measured by in situ ellipsometry. Data are collected after every five ALD cycles and after each individual ALE cycle. The data for 180 and $270~\\mathrm{ms}$ is offset on the $y$ axis by $1\\mathrm{nm}$ and $2\\mathrm{nm}$ , respectively, to improve visualization.","id":"test/atomic-layer-etching/experimental-usecase/37/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/37/fig_5","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/Effect of reactant dosing on selectivity during area-selective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":669,"height":492,"image_format":"jpeg","image_sha256":"aec23ed3fbcf9197aba419647dbdbc8156590bc08218f2b708ffa7a9a03377a3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":492}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the thickness of the deposited TiO2 layer as a function of super-cycles (combined ALD/ALE cycles). Three data series are plotted with varying TiCl4 and H2O exposure times (0.09, 0.18 and 0.27 for both, respectively).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Super-cycles | Thickness (nm) 0.09 / 45 / 0.09 / 45 s | Thickness (nm) 0.18 / 45 / 0.18 / 45 s | Thickness (nm) 0.27 / 45 / 0.27 / 45 s |\\n|---|---|---|---|\\n| 0 | 0 | 1 | 2 |\\n| 5 | 0.25 | 1.5 | 2.5 |\\n| 10 | 0.25 | 1.5 | 5.5 |\\n| 15 | 0.5 | 1.5 | |\\n| 20 | 0.5 | 1.5 | |\\n| 25 | 0.5 | | |\\n| 30 | 0.75 | | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 0.25 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"About 1.5 nm (0.5 nm when taking into account the offset).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 5.5 nm (3.5 nm when taking into account the offset).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the initial three to five super-cycles, all dosing conditions exhibit similar alternating deposition and etching behaviour, indicating comparable early-stage nucleation resistance on the non-growth surface. Beyond approximately five super-cycles, however, the longest dosing condition (270 ms for both TiCl₄ and H₂O) shows a marked increase in net film accumulation after the ALE steps, signifying more rapid unwanted nucleation when longer ALD doses are combined with ALE. This contrasts with pure ALD behaviour, where increased dose times did not significantly affect nucleation on Si–H, and is attributed to ALE-induced removal of passivating Si–H bonds that promotes formation of Si–O sites favourable for TiO₂ growth. In addition, the figure indicates that the amount of material removed per ALE cycle decreases over successive super-cycles for all dosing conditions, leaving a thin residual layer after etching; this residual thickness, on the order of ~0.2 nm after extended cycling, is interpreted as arising from surface oxidation and formation of non-etchable species rather than incomplete removal of TiO₂.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_37_fig_7.jpg","caption":"FIG. 7. The thickness of the $\\mathrm{TiO_2}$ layer on $\\mathrm{Si - H}$ for $\\mathrm{TiCl_4 / H_2O}$ 90/270 ms and 270/90 ms dosing times as measured by in situ ellipsometry. Data are shown for 15 super-cycles, consisting of 30 ALD and 5 ALE cycles each, with data points taken every five cycles for ALD and every cycle for ALE. The data for 90/270 ms are offset on the y axis by 1 nm to improve visualization.","id":"test/atomic-layer-etching/experimental-usecase/37/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/37/fig_7","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/Effect of reactant dosing on selectivity during area-selective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":669,"height":555,"image_format":"jpeg","image_sha256":"3c1aca0c1d2b20af4731d9cb195327a02c78c5dd425d33800f2d86ccbaa53249","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":555}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the thickness of two TiO2 layers over super-cycles. Both layers are grown on Si-H and are grown at two different precursor exposure times (90/270 ms for TiCl4/H2O, and 270/90 ms for TiCl4/H2O, respectively).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Super-Cycles | Thickness (nm) 0.09 / 45 / 0.27 / 45 s | Thickness (nm) 0.27 / 45 / 0.09 / 45 s |\\n|---|---|---|\\n| 0 | 1.0 | 0 |\\n| 3 | 1.25 | 0.25 |\\n| 6 | 1.5 | 0.25 |\\n| 9 | 1.5 | 0.25 |\\n| 12 | 2.0 | 0.5 |\\n| 15 | 2.5 | 0.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Si-H.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"30 ALD and 5 ALE cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They differ in exposure time of the precursors during ALD (either 90 ms TiCl4 and 270 ms H2O, or 270 ms TiCl4 and 90 ms H2O).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"15.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_44_fig_2.jpg","caption":"FIG. 2. (Color online) Film composition vs sputter time obtained by XPS depth-profiling analysis. The initial AlN film on the Si(111) wafer had a thickness of $\\sim 500\\mathrm{\\AA}$","id":"test/atomic-layer-etching/experimental-usecase/44/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/44/fig_2","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/Thermal atomic layer etching of crystalline aluminum nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":664,"height":553,"image_format":"jpeg","image_sha256":"7ecae6a04743fe0996bb16dafede71e714458ed80909f7554fe434d0306e335b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":659,"height":550}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart represents the film composition of (Al, C, N, O, Si) agains Sputtering time (s) obtained by XPS depth-profiling analysis. This image indicates that there is a large concentration of oxygen on the surface that decays as a function of sputtering time.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Composition (at.%) | Sputtering Time (s) | Material |\\n|--------------------|---------------------|----------|\\n| 0 | 40 | Al |\\n| 0 | 10 | C |\\n| 0 | 30 | N |\\n| 0 | 17 | O |\\n| 0 | 0 | Si |\\n| 1000 | 57 | Al |\\n| 1000 | 0 | C |\\n| 1000 | 40 | N |\\n| 1000 | 2 | O |\\n| 1000 | 0 | Si |\\n| 2000 | 40 | Al |\\n| 2000 | 0 | C |\\n| 2000 | 40 | N |\\n| 2000 | 2 | O |\\n| 2000 | 0 | Si |\\n| 3000 | 58 | Al |\\n| 3000 | 0 | C |\\n| 3000 | 40 | N |\\n| 3000 | 2 | O |\\n| 3000 | 0 | Si |\\n| 4000 | 56 | Al |\\n| 4000 | 0 | C |\\n| 4000 | 40 | N |\\n| 4000 | 1 | O |\\n| 4000 | 1 | Si |\\n| 5000 | 13 | Al |\\n| 5000 | 0 | C |\\n| 5000 | 19 | N |\\n| 5000 | 0 | O |\\n| 5000 | 64 | Si |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Surface Contamination: High Carbon (C) and Oxygen (O).\\n\\nAlOₓNᵧ Layer: High O and Al, with some N.\\n\\nBulk AlN Film: High Al and N, low O, with Al > N (Al-rich).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Oxygen (O) concentration is high at the surface and decreases with depth, while Nitrogen (N) is low at the surface and increases inward. This reveals the competition between a surface oxidation route (forming AlOₓ) and the intended nitride formation route (forming AlN). The dominance of the oxidation route at the surface creates the AlOₓNᵧ layer, which must be accounted for as an etching barrier before accessing the target AlN film.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It may lead to a slightly different etch rate compared to perfectly stoichiometric AlN, as the reaction with HF could form a different AlFₓ surface layer.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Surface carbon acts as a contamination barrier that can block the reactant pulses (HF, Sn(acac)₂) from reaching the underlying AlN. This would cause poor etch initiation, non-uniformity, and inconsistent cycle counts. Therefore, an in-situ or pre-etch cleaning step is essential to remove carbon and ensure reproducible ALE.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG10.jpg","caption":"FIG. 10. Resistivities of unetched and etched molybdenum films as a function of film thickness. Resistivity values reported by Kim et al. (Ref. 32) are included for reference.","id":"test/atomic-layer-etching/experimental-usecase/47/FIG10","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG10","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":680,"height":584,"image_format":"jpeg","image_sha256":"2e1218134ffcb0a7ae5c56fc3b9e21e8b4dc9d41d26ac106d94014f09b8d9264","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":673,"height":576}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image plots the resistivity as a function of thickness for samples before and after etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Thickness (nm) | Resistivity (µΩ·cm) | Condition |\\n|---------------|----------------------|------------------|\\n| ~5 | 33 | Kim et al. |\\n| ~10 | 25 | After etching |\\n| ~12 | 17 | After etching |\\n| ~15 | 14 | After etching |\\n| ~15 | 13 | Kim et al. |\\n| ~18 | 12 | Before etching |\\n| ~20 | 12 | After etching |\\n| ~25 | 11 | After etching |\\n| ~30 | 10 | After etching |\\n| ~35 | 9 | After etching |\\n| ~40 | 8 | Before etching |\\n| ~45 | 8 | After etching |\\n| ~50 | 7 | Before etching |\\n| ~55 | 7 | Before etching |\\n| ~60 | 7 | Before etching |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Sheet resistances of the films were measured with the fourpoint probe at nine points in a rectangular array along the film surface and the average values were used for calculating resistivities of the films by multiplying the average sheet resistances by the film thicknesses\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etching itself did not seem to affect the resistivity, despite the grain boundaries becoming more distinct. The resistivities of the etched and as-deposited films follow the same trend down to about 20 nm. There were no as-deposited films with thicknesses smaller than 20 nm to serve as a reference, but values from a recent study of ALD molybdenum are included in the graph\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Bulk resistivity of molybdenum is reported to be 5.34 μΩ cm, whereas the films in the present study had at the lowest resistivity of about 8 μΩ cm. In a study by van der Zouw et al., ALD grown molybdenum films showed increased resistivity below 20 nm thickness, and a sharp increase when the thickness was approaching the mean free path of electrons in Mo (11.2 nm). The record low resistivity of 13 μΩ cm at 10 nm thickness claimed by Kim et al. is\\nonly slightly lower than seen here. Based on this, it seems that the increased resistivity is mostly caused by thin film effects rather than the etching.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG5_b.jpg","caption":"FIG. 5. (a) EPC as a function of temperature using cycles of $4\\mathrm{~s~}\\mathrm{NbCl}_5$ and $3\\mathrm{~s~}\\mathrm{O}_2$ pulses followed by $1\\mathrm{~s~}$ purges. (b) EPC as a function of the $\\mathrm{O}_2$ pulse length at different temperatures using $4\\mathrm{~s~}\\mathrm{NbCl}_5$ pulses and $1\\mathrm{~s~}$ purges.","id":"test/atomic-layer-etching/experimental-usecase/47/FIG5_b","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG5_b","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG5_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG5_b.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":575,"image_format":"jpeg","image_sha256":"b5efc30202c887efeb949c94d8bcdb14b9f44869a21f8dcef52f15904626055b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":4,"width":671,"height":571}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure plots EPC against oxygen pulse length for different temperatures.\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"| O₂ pulse length (s) | 400 °C | 350 °C | 300 °C | 250 °C |\\n|---|---|---|---|---|\\n| 1 | 3.0 | 1.5 | 0.6 | 0.1 |\\n| 2 | 3.5 | 2.0 | 0.8 | 0.2 |\\n| 3 | 4.0 | 2.5 | 1.2 | 0.3 |\\n| 6 | 4.5 | 2.8 | 1.6 | 0.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The oxidation step was further studied at etching temperatures of 250–400 °C by varying the O2 pulse length\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The EPC does not fully saturate at any of the temperatures, but the growth of EPC slows down gradually. This is most likely due to the forming surface oxide layer acting as a diffusion barrier that inhibits further oxidation\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Oxidation of metals at moderate temperatures generally follows a parabolic rate law. The EPC values seen here are somewhat lower than what would be expected for the parabolic rate law, but at the higher end of the O2 pulse lengths, the EPC might be limited by the dose of NbCl5.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_12_figure_8.jpg","caption":"Figure 8. (a) Scatter plot showing the coverage of total HF adsorbed vs the Al-F coverage in the minima shown in Figure 7. The data points are colored according to the corresponding total binding energy per square nanometer (color plot online). The square markers along the diagonal dashed line indicate geometries where the HF coverage is equal to the Al-F coverage. Panels b and c show the change in binding energy per square nanometer with an increase in HF and Al-F coverage, respectively.","id":"test/atomic-layer-etching/simulation-usecase/12/figure_8","sample_id":"atomic-layer-etching/simulation-usecase/12/figure_8","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1409,"height":417,"image_format":"jpeg","image_sha256":"033f91c74bf30aadcaea84365b2fc8f4a2e8fa5165ef13f8d275f8db59deac1b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":15,"y":26,"width":418,"height":388},{"panel_id":"b","x":439,"y":36,"width":400,"height":378},{"panel_id":"c","x":841,"y":26,"width":566,"height":385}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure compares total HF coverage with Al–F coverage across the adsorption minima from Figure 7. Most data points lie below the dashed diagonal, indicating that increasing HF adsorption does not translate one-to-one into Al–F bond formation, especially at higher coverages.\"},{\"panel_id\":\"b\",\"text\":\"The subfigure shows that the total binding energy per unit area becomes progressively more negative with increasing HF coverage, reflecting stronger overall adsorption as surface loading increases.\"},{\"panel_id\":\"c\",\"text\":\"The subfigure shows a similar trend with Al–F coverage: higher densities of Al–F bonds correlate with more negative binding energies, with the strongest stabilization occurring at high Al–F coverages.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Coverage HF (nm⁻²) | Coverage Al–F (nm⁻²) |\\n|-------------------|----------------------|\\n| ~1 | ~1 |\\n| ~3 | ~1 |\\n| ~5 | ~3 |\\n| ~7 | ~4 |\\n| ~9 | ~5 |\\n| ~10 | ~5 |\\n| ~14 | ~9 |\\n| ~15 | ~7 |\"},{\"panel_id\":\"b\",\"text\":\"| Coverage HF (nm⁻²) | E_bind (eV/nm²) |\\n|-------------------|----------------|\\n| ~1 | ~ -2 |\\n| ~3 | ~ -3 |\\n| ~5 | ~ -8 |\\n| ~7 | ~ -11 |\\n| ~9 | ~ -12 |\\n| ~10 | ~ -14 |\\n| ~13 | ~ -15 |\\n| ~13 | ~ -14 |\\n| ~15 | ~ -16 |\"},{\"panel_id\":\"c\",\"text\":\"| Coverage Al–F (nm⁻²) | E_bind (eV/nm²) |\\n|---------------------|----------------|\\n| ~1 | ~ -3 |\\n| ~3 | ~ -7 |\\n| ~3 | ~ -10 |\\n| ~5 | ~ -12--16 |\\n| ~7 | ~ -16 |\\n| ~10 | ~ -15 |\\n| ~14 | ~ -16 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Al–F coverage increases with HF coverage but remains consistently lower for most configurations. This indicates that a significant fraction of adsorbed HF remains molecular or participates in hydrogen-bonded networks rather than forming Al–F bonds.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 14–15 nm⁻².\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The binding energy becomes more negative.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_14_fig_3.jpg","caption":"Fig. 3. Total etched depths after each cycle of the SiN PE-ALE processes with $\\mathrm{Ar^{+}}$ $\\mathrm{Kr^{+}}$ and $\\mathrm{Xe^{+}}$ ion irradiations, evaluated from the MD simulations of Fig. 2. The EPC averaged over the five cycles are 0.41, 0.17, and $0.08\\mathrm{nm}$ for the PE-ALE processes with $\\mathrm{Ar^{+}}$ $\\mathrm{Kr^{+}}$ and $\\mathrm{Xe^{+}}$ ion irradiations, respectively.","id":"test/atomic-layer-etching/simulation-usecase/14/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/14/fig_3","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/Molecular dynamics simulations of silicon nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":673,"height":553,"image_format":"jpeg","image_sha256":"887430939500f945b57d2ff1f899a19046dfa97d69312133d47f8d76162827a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":553}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents total etched depth as a function of processing cycles for three noble gas ions: argon (Ar), krypton (Kr), and xenon (Xe). Ar demonstrates a steep and consistent increase in etch depth across five cycles, indicating its superior etching efficacy. Kr follows a moderate linear trend, while Xe shows the least depth gain and plateaus after Cycle 3. This suggests that Ar is most effective at enhancing etch performance in this context, while Xe may saturate or be less reactive under the same conditions\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle | Ar (nm) | Kr (nm) | Xe (nm) |\\n|-----------|---------|---------|---------|\\n| Initial | 0.0 | 0.0 | 0.0 |\\n| Cycle 1 | 0.1 | 0.1 | 0.1 |\\n| Cycle 2 | 0.3 | 0.2 | 0.2 |\\n| Cycle 3 | 0.6 | 0.4 | 0.3 |\\n| Cycle 4 | 1.2 | 0.5 | 0.4 |\\n| Cycle 5 | 2.1 | 0.8 | 0.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure evaluates the total etched depth resulting from processing with noble gases Ar, Kr, and Xe over five cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Argon (Ar): highest , Krypton (Kr): moderate , Xenon (Xe): minimal increase\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The steadily increasing etched depth for Ar across cycles suggests it is the most reactive or energetic etchant in this setup, enabling efficient material removal. Kr demonstrates moderate etching capacity with diminishing returns after Cycle 4, possibly due to saturation or lower energy transfer. Xe's depth stabilises early, indicating limited reactivity or surface saturation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_21_figure_6.jpg","caption":"Figure 6. Uniformity across a blanket silicon wafer before and after the ALE process. Reproduced with permission, copyright 2013.","id":"test/atomic-layer-etching/simulation-usecase/21/figure_6","sample_id":"atomic-layer-etching/simulation-usecase/21/figure_6","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/Review Paper -- Atomic Layer Etching Rethinking the Art of Etch.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":550,"height":391,"image_format":"jpeg","image_sha256":"3193f04e0c852e9582bb7dfe56f0e83c3e7161f782ebc70b782927a370191d53","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":545,"height":385}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot compares silicon thickness across the wafer before and after ALE. Thickness decreases uniformly from 87 nm to 40 nm, while the 3σ variation remains ±1.5 nm in both cases. The preservation of the same statistical spread indicates that material removal occurs evenly across the wafer. This demonstrates that ALE maintains wafer-scale uniformity despite substantial thickness reduction\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Condition | Si thickness (nm) | Variation (3σ, nm) |\\n|-------------|------------------|--------------------|\\n| Before etch | 87 | ±1.5 |\\n| After ALE | 40 | ±1.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Uniformity is preserved because each ALE cycle consists of a self-limiting surface modification step followed by controlled, ion-activated removal. The saturation of the modification reaction ensures that all wafer regions experience the same chemically altered layer thickness, independent of local exposure history. Subsequent ion activation removes only this modified layer uniformly, suppressing spatial variations that typically arise in continuous plasma etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thickness decreases from 87 nm before etching to 40 nm after ALE.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Etch response is largely insensitive to local thickness variations.\\n-Each region undergoes nearly identical cycle-by-cycle material removal.\\n-Topography-dependent microloading effects are minimized by self-limiting surface chemistry.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Uniform thickness ensures predictable alignment and interaction between stacked layers in complex device architectures. Variations in underlying film thickness can propagate into overlay errors or interface defects. ALE’s ability to preserve uniformity supports reliable multi-layer integration with tight dimensional control.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_11.jpg","caption":"Figure 11. (a) Scatter plot for $\\mathrm{Hf - F}$ coverage versus total HF coverage for the surface coverage values in Table 3. Note that some HF coverages resulted in partial or complete $\\mathrm{Hf - F}$ coverage for different configurations, for example, the coverage of $1.0\\mathrm{HF / nm^2}$ . The square data points are where the adsorbed HF coverage equals $\\mathrm{Hf - F}$ coverage. The circular data points are where partially dissociated HF molecules are present. Plots (b) and (c) show the change in binding energy per square nanometer with an increase in HF and $\\mathrm{Hf - F}$ coverage, respectively.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_11","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_11","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":847,"height":353,"image_format":"jpeg","image_sha256":"e86dda43ca9e5b059dfa4babe8832060d1de99f943e6f48a6aadd26129650566","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":38,"width":274,"height":315},{"panel_id":"b","x":290,"y":37,"width":274,"height":316},{"panel_id":"c","x":579,"y":31,"width":265,"height":322}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Scatter plot comparing dissociated Hf–F coverage with total HF coverage. Square points lie on the dashed 1:1 line, indicating configurations where HF fully dissociates. Circular points fall below this line, showing partial dissociation at higher coverages and the onset of saturation behavior.\"},{\"panel_id\":\"b\",\"text\":\"Scatter plot showing that Ebind per unit area becomes increasingly negative as total HF coverage increases. The trend suggests stronger net binding with higher surface coverage, with some spread reflecting different adsorption configurations.\"},{\"panel_id\":\"c\",\"text\":\"Scatter plot showing that Ebind per unit area also decreases with increasing Hf–F coverage. Compared to (b), this representation highlights how the degree of dissociation directly correlates with surface stabilization.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Data Series | Total Coverage [HF/nm²] | Hf-F Coverage [Hf-F/nm²] |\\n|----------------|----------------------------------|-----------------------------------|\\n| Squares (on line) | 1.0 | 1.0 |\\n| Squares (on line) | 2.5 | 2.5 |\\n| Circles (deviation) | 2.0 | 1.5 |\\n| Circles (deviation) | 4.0 | 3.0 |\\n| Circles (deviation) | 6.0 | 5.0 |\\n| Circles (deviation) | 8.0 | 6.5 |\\n| Circles (saturation) | 15.0 | 6.0 |\\n| Circles (saturation) | 17.0 | 7.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Coverage [HF/nm²] | Ebind [eV/nm²] | \\n|---|---| \\n| 1.0 | ~ -1.0 | \\n| 2.0 | ~ -3.0 | \\n| 4.0 | ~ -4.5 | \\n| 8.0 | ~ -8.0 | \\n| 8.0 | ~ -9.5 | \\n| 15.0 | ~ -12.0 | \\n| 17.0 | ~ -13.0 |\"},{\"panel_id\":\"c\",\"text\":\"| Coverage [Hf-F/nm²] | Ebind [eV/nm²] |\\n|---|---|\\n| 0.5 | ~ -1.0 |\\n| 2.0 | ~ -3.0 |\\n| 3.0 | ~ -4.5 |\\n| 5.8 | ~ -8.0 |\\n| 6.0 | ~ -12.0 |\\n| 7.0 | ~ -13.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The square points fall on the dashed 1:1 line, indicating complete HF dissociation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The square points follow the 1:1 line, indicating configurations where all adsorbed HF dissociates to form Hf–F. In contrast, the circular points deviate below this line, especially at higher total HF coverages. This suggests that as coverage increases, not all HF molecules dissociate, likely due to site saturation or geometric constraints on the surface. The coexistence of fully and partially dissociated configurations indicates coverage-dependent limits on dissociation.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Hf–F coverage (per nm²).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ebind decreases (becomes more negative) with increasing coverage.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_12.jpg","caption":"Figure 12. (a) Scatter plot for $\\mathrm{Zr - F}$ coverage versus total HF coverage for the surface coverage values in Table 4. Note that some HF coverages resulted in partial or complete $\\mathrm{Zr - F}$ coverage for different configurations, for example, the coverage of $1.0\\mathrm{HF / nm^2}$ . The square data points are where the adsorbed HF coverage equals $\\mathrm{Zr - F}$ coverage. The circular data points are where partially dissociated HF molecules are present. Plots (b) and (c) show the change in binding energy per square nanometer with an increase in HF and $\\mathrm{Zr - F}$ coverage, respectively.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_12","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_12","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":847,"height":347,"image_format":"jpeg","image_sha256":"c7e1490cdb1915ea35a621e0610ef9150d504e23781ee51515945264ed759e1a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":31,"width":278,"height":317},{"panel_id":"b","x":289,"y":30,"width":280,"height":316},{"panel_id":"c","x":573,"y":31,"width":273,"height":315}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_12.jpg","caption":"Figure 12. Refractive index, $n$ , of the $\\mathrm{Al}_2\\mathrm{O}_3$ ALD films versus growth temperature from 33 to $177^{\\circ}C$ and comparisons to results from other $\\mathrm{Al}_2\\mathrm{O}_3$ ALD studies at higher temperatures.9,12-15,21","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_12","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_12","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between growth temperature and refractive index, with data points from this work for lower temperatures (below 200 °C) and other studies for higher temperatures (~150°C - 500°C). This study shows stronger positive correlation between temperature and refractive index.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Growth Temperature (°C) | Refractive Index, n | Study |\\n|---|---|---|\\n| 31 | 1.511 | This work |\\n| 56 | 1.532 | This work |\\n| 78 | 1.541 | This work |\\n| 101 | 1.570 | This work |\\n| 123 | 1.582 | This work |\\n| 148 | 1.611 | Other studies |\\n| 148 | 1.631 | Other studies |\\n| 175 | 1.602 | This work |\\n| 176 | 1.651 | Other studies |\\n| 198 | 1.641 | Other studies |\\n| 248 | 1.641 | Other studies |\\n| 299 | 1.671 | Other studies |\\n| 398 | 1.682 | Other studies |\\n| 497 | 1.672 | Other studies |\\n| 499 | 1.651 | Other studies |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This study.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The maximum refractive index achieved in this work is approximately 1.60, occuring at 175°C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Among the temperatures studied in this work, the highest growth temperature (~175 °C) appears to produce the optically densest films. This is supported by the maximum refractive index measured in this study. A higher refractive index indicates improved greater optical density.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":595,"height":403}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":595,"height":403,"image_format":"jpeg","image_sha256":"64063e72c567306ff9aebbf0d0986d83ce9743cf3d191eaca3e07600c7dfd96f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_4.jpg","caption":"Figure 4. $\\mathrm{Al}_2\\mathrm{O}_3$ mass gain per cycle versus reactant exposure time at $58^{\\circ}C$ . Purge times for both TMA and water were 30 s each. The exposure time of the reactant not being investigated was held constant at $1\\mathrm{s}$ .","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_4","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between exposure time and mass gain per cycle for two different substances at 58°C. The cycle sequence for water was (1/30/x/30), fro TMA it was (y/30/1/30).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Exposure Time (s) | Mass Gain per Cycle (ng/cm²) | Reagent (cycle conditions) |\\n|---|---|---|\\n| 0,00 | 0,69 | Water (1,30,x,30) |\\n| 0,18 | 22,38 | Water (1,30,x,30) |\\n| 0,47 | 26,08 | Water (1,30,x,30) |\\n| 0,96 | 28,73 | Water (1,30,x,30) |\\n| 1,97 | 31,15 | Water (1,30,x,30) |\\n| 3,97 | 32,88 | Water (1,30,x,30) |\\n| 7,98 | 35,15 | Water (1,30,x,30) |\\n| 0,00 | 0,16 | TMA (y,30,1,30) |\\n| 0,18 | 26,08 | TMA (y,30,1,30) |\\n| 0,47 | 27,07 | TMA (y,30,1,30) |\\n| 0,96 | 27,07 | TMA (y,30,1,30) |\\n| 1,97 | 27,82 | TMA (y,30,1,30) |\\n| 3,97 | 29,18 | TMA (y,30,1,30) |\\n| 7,98 | 30,92 | TMA (y,30,1,30) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The graph shows soft saturation. Hard saturation would be a perfectly horizontal line. The small upward slope here indicates the reaction is either not perfectly complete or purge times are insufficient.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Water produces higher mass gain (data point at 1 s pulse time).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1 second.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":511,"height":400}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":511,"height":400,"image_format":"jpeg","image_sha256":"94bf66aac13a14f0e6ef8eadcaa657abf6c1c7c5abbd6f6f8a35f64ad70f93ff","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_5.jpg","caption":"Figure 5. $\\mathrm{Al}_2\\mathrm{O}_3$ mass gain per cycle versus purge time at 58 $^\\circ \\mathrm{C}$ . Exposure times for both TMA and water were 1 s each. The purge time of the reactant not being investigated was held constant at $30~\\mathrm{s}$ .","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_5","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between purge time (in seconds) and mass gain per cycle (in ng/cm²) at 58°C. The data points represent measurements for water (1,30,1,x) and TMA (1,y,1,30).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Purge Time (s) | Mass Gain per Cycle (ng/cm²) | Reagent (cycle conditions) |\\n|---|---|---|\\n| 2,02 | 31,20 | Water (1,30,1,x) |\\n| 4,78 | 28,65 | Water (1,30,1,x) |\\n| 9,90 | 27,82 | Water (1,30,1,x) |\\n| 19,93 | 27,35 | Water (1,30,1,x) |\\n| 29,97 | 27,07 | Water (1,30,1,x) |\\n| 40,07 | 27,02 | Water (1,30,1,x) |\\n| 0,27 | 29,01 | TMA (1,y,1,30) |\\n| 1,95 | 27,35 | TMA (1,y,1,30) |\\n| 9,90 | 27,35 | TMA (1,y,1,30) |\\n| 20,00 | 27,52 | TMA (1,y,1,30) |\\n| 29,97 | 27,79 | TMA (1,y,1,30) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At short purge times (approx. below 10 s).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The evidence of CVD growth is the higher mass gain per cycle observed at short purge times. In ideal ALD, mass gain should be independent of purge time once surface reactions are saturated. The decrease in mass gain with increasing purge time indicates gas-phase reactions at short purges, which are characteristic of CVD.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 10 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, 10 seconds is likely not sufficient for purging after reaction with water. The plot shows a higher mass gain per cycle at around 10 seconds, indicating residual water remains and contributes to CVD‑like growth. A longer purge time is needed for the mass gain to reach a stable, ALD‑like plateau.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":528,"height":394}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":528,"height":394,"image_format":"jpeg","image_sha256":"dcfb4490f903d9bb591161b0b611fd5aa61d932ded2399673594000184bfd8c6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_6.jpg","caption":"Figure 6. Ellipsometry data for $\\mathrm{Al}_2\\mathrm{O}_3$ ALD films grown using 300 reaction cycles on Si(100) substrates. The refractive index, growth rate, and density (calculated using ellipsometry and QCM data) are plotted versus growth temperatures from 33 to $177^{\\circ}C$ .","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_6","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows how growth temperature affects the density, refractive index, and growth rate of the film. As temperature increases, density and refractive index generally rise, while the growth rate exhibits a peak at intermediate temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Growth Temperature (°C) | Density (g/cm³) | Refractive Index n | Growth Rate (Å/cycle) |\\n|---|---|---|---|\\n| 32,73 | 2,48 | 1,52 | 1,11 |\\n| 57,47 | 2,50 | 1,53 | 1,20 |\\n| 79,64 | 2,65 | 1,55 | 1,27 |\\n| 101,55 | 2,68 | 1,58 | 1,34 |\\n| 124,23 | 2,95 | 1,60 | 1,34 |\\n| 176,55 | 3,01 | 1,61 | 1,26 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They are possitively correlated (the refractive index increases with increasing density).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, there is evidence of an ALD temperature window. The growth rate remains relatively constant over an intermediate temperature. This indicates self‑limiting ALD behavior without strong temperature‑driven variations.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher temperatures lead to more dense films.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 100°C - 125 °C.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":586,"height":367}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":586,"height":367,"image_format":"jpeg","image_sha256":"526dfb04b4e16db8234f1099a12146840fdf4bd4b058a27d9037a3204ad5fe88","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_9.jpg","caption":"Figure 9. Density of $\\mathrm{Al}_2\\mathrm{O}_3$ ALD films versus growth temperature from 33 to $177^{\\circ}\\mathrm{C}$ for the various methods.","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_9","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows that the density of Al₂O₃ ALD films increases with growth temperature from 33 to 177 °C. Multiple measurement techniques (ellipsometry + QCM, profilometry + QCM, AFM + QCM, XRR, RBS/FRes + ellipsometry, and the Lorentz–Lorenz method) yield consistent upward trends with some variations between methods.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Growth Temperature (°C) | Density (g/cm³) | Measurement |\\n|---|---|---|\\n| 32.42 | 2.49 | Ellipsometry + QCM |\\n| 57.52 | 2.50 | Ellipsometry + QCM |\\n| 79.48 | 2.65 | Ellipsometry + QCM |\\n| 101.70 | 2.68 | Ellipsometry + QCM |\\n| 124.97 | 2.94 | Ellipsometry + QCM |\\n| 176.47 | 2.99 | Ellipsometry + QCM |\\n| 32.42 | 2.53 | Profilometry + QCM |\\n| 57.25 | 2.67 | Profilometry + QCM |\\n| 79.22 | 2.59 | Profilometry + QCM |\\n| 101.44 | 2.69 | Profilometry + QCM |\\n| 125.49 | 3.08 | Profilometry + QCM |\\n| 176.73 | 3.01 | Profilometry + QCM |\\n| 32.16 | 2.43 | AFM + QCM |\\n| 57.52 | 2.75 | AFM + QCM |\\n| 79.48 | 2.61 | AFM + QCM |\\n| 101.44 | 2.49 | AFM + QCM |\\n| 124.97 | 2.83 | AFM + QCM |\\n| 176.99 | 2.99 | AFM + QCM |\\n| 32.16 | 2.42 | XRR |\\n| 56.99 | 2.58 | XRR |\\n| 79.48 | 2.70 | XRR |\\n| 101.44 | 2.66 | XRR |\\n| 124.44 | 2.74 | XRR |\\n| 177.25 | 3.07 | XRR |\\n| 32.42 | 2.69 | RBS/FReS+Ellipsomet |\\n| 57.25 | 2.66 | RBS/FReS+Ellipsomet |\\n| 79.22 | 2.74 | RBS/FReS+Ellipsomet |\\n| 101.44 | 2.86 | RBS/FReS+Ellipsomet |\\n| 124.71 | 2.90 | RBS/FReS+Ellipsomet |\\n| 177.25 | 3.12 | RBS/FReS+Ellipsomet |\\n| 32.16 | 2.63 | Lorentz-Lorentz |\\n| 57.52 | 2.71 | Lorentz-Lorentz |\\n| 79.22 | 2.75 | Lorentz-Lorentz |\\n| 101.70 | 2.88 | Lorentz-Lorentz |\\n| 124.71 | 2.92 | Lorentz-Lorentz |\\n| 176.73 | 2.96 | Lorentz-Lorentz |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ellipsometry + QCM, profilometry + QCM, and XRR techniques appear to agree most closely with each other.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They show a positive correlation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"RBS/FRes + ellipsometryand the Lorentz–Lorenz method.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The variability between measurements is larger at 100°C .\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":564,"height":408}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":564,"height":408,"image_format":"jpeg","image_sha256":"3a460c225e510b42586e062fb3b66d77891659d5d66bf521b63cffe2f8df3ea5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_12.jpg","caption":"FIG. 12. (Color online) Thickness evolution of $\\mathrm{Pt}$ and $\\mathrm{PtO_2}$ films deposited on an $\\mathrm{Al}_2\\mathrm{O}_3$ substrate (Ref. 164). The precursor was $\\mathrm{Pt(Cp^{Me})Me_3}$ and $\\mathrm{O}_2$ gas or an $\\mathrm{O}_2$ plasma were used as the oxidants. After 150 cycles, the plasma-assisted ALD process was stopped and film growth was continued using thermal ALD. The plasma exposure time for was $0.5\\mathrm{s}$ for $\\mathrm{Pt}$ and $5\\mathrm{s}$ for $\\mathrm{PtO_2}$ . From H.C.M. Knoops et al., Electrochem. Solid-State Lett. 12, G35 (2009). Reproduced with permission of ECS-The Electrochemical Society.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_12","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_12","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the relationship between film thickness and the number of ALD cycles for different deposition methods. Both Plasma ALD Pt and Plasma ALD PtO₂ display nearly linear growth with increasing cycles, while Thermal ALD Pt shows negligible thickness change, indicating limited film deposition. Plasma-enhanced processes thus exhibit higher growth rates and efficiency\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of ALD Cycles | Plasma ALD Pt (nm) | Thermal ALD Pt (nm) | Plasma ALD PtO₂ (nm) |\\n|----------------------|--------------------|---------------------|----------------------|\\n| 0 | 0 | 0 | 0 |\\n| 50 | 2 | 0 | 1.8 |\\n| 100 | 4 | 0 | 3.5 |\\n| 150 | 6 | 0 | 5.5 |\\n| 200 | 8 | 0 | 7.5 |\\n| 250 | 10 | 0 | 9.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Plasma ALD Pt and Plasma ALD PtO₂ show steady linear increases in thickness with the number of cycles, while Thermal ALD Pt shows minimal or no growth, indicating poor deposition efficiency under the given conditions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Film thickness (nm).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Plasma ALD Pt, Thermal ALD Pt, Plasma ALD PtO₂\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":683,"height":533}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":683,"height":533,"image_format":"jpeg","image_sha256":"f8b2a824400e957968673796907766e6172ec2443dcd3bea9c793a8d9bcbf3db","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_15_fig_4.jpg","caption":"FIG. 4. Loss tangent of BST film grown on $\\mathrm{MgO}$ , $\\mathrm{TiO_2 / Si}$ , and $\\mathrm{Ta}_2\\mathrm{O}_5 / \\mathrm{Si}$ substrates.","id":"test/atomic-layer-deposition/experimental-usecase/15/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/15/fig_4","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Chart plots loss tangent against applied voltage for BST/MgO, BST/TiO2/Si and BST/Ta2O5/Si samples.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Applied Voltage (V) | Loss Tangent of BST/MgO | Loss Tangent of BST/TiO2/Si | Loss Tangent of BST/Ta2O5/Si |\\n|-------------------|--------------|-----------|----------|\\n| 0 | 0.0 | 0.05 | 0.12 |\\n| 2 | 0.0 | 0.1 | 0.18 |\\n| 4 | 0.0 | 0.18 | 0.22 |\\n| 6 | 0.0 | 0.2 | 0.38 |\\n| 8 | 0.0 | 0.3 | 0.45 |\\n| 10 | 0.0 | 0.35 | 0.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The loss tangent increases with increase in applied voltage.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After an applied voltage of 2 V, increasing the voltage the loss tangent of BST/Ta2O5/Si is double that of BST/TiO2/Si\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"BST films grown on MgO showed the lowest loss tangent\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The loss tangent of BST grown on TiO2 /Si and Ta2O5 /Si is high, presumably due to the lossy Si substrate. The figure of merit (FOM), ratio of\\ntunability to dielectric loss, is very important for microwave tunable device applications. At an applied voltage of 5 V, the\\nFOM of BST/TiO2 and BST/Ta2O5 were 5.22 and 1.57, respectively. The BST films grown on TiO2 and Ta2O5 buffered\\nSi substrates showed relatively lower FOM values as compared to the FOM (11.87) of BST/MgO due to the lossy Si substrate in the former case\"}]}]","bbox":[{"panel_id":"a","x":1,"y":0,"width":533,"height":531}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/Il-Doo Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":539,"height":531,"image_format":"jpeg","image_sha256":"b23c14ec128765c1e3fe1a27d88a3082c16f1241c53a28e568071ccafae437fb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_21_fig4.jpg","caption":"Fig.4 Phase shift of the incident light $(\\Delta)$ from in situ SE measurements of the reaction of $\\mathrm{CO_2}$ and $\\mathsf{H}_2\\mathsf{O}$ with $\\sim 50$ nm plasma ALD films grown at 250, 275 and $300^{\\circ}C$ First, $\\mathrm{CO_2}$ was dosed into the reaction chamber 20 times with pulses of 2 s, next $\\mathsf{H}_2\\mathsf{O}$ was pulsed 20 times for $50~\\mathrm{ms}$ and afterwards $\\mathrm{CO_2}$ was again pulsed 20 times. SE data was recorded after every pulse and $\\Delta$ is plotted at $589~\\mathrm{nm}$","id":"test/atomic-layer-deposition/experimental-usecase/21/fig4","sample_id":"atomic-layer-deposition/experimental-usecase/21/fig4","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Phase shift of the incident light (D) from in situ SE measurements of the reaction of CO2 and H2O with ~50 nm plasma ALD films grown at 250, 275 and 300 °C\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Measurement Number | Δ (°) at 250 °C | Δ (°) at 275 °C | Δ (°) at 300 °C |\\n|---------------------|-----------------|-----------------|-----------------|\\n| 0 | 0 | 0 | 0 |\\n| 10 | 1 | 5 | 2 |\\n| 20 | 1 | 10 | 3 |\\n| 30 | 1 | 13 | 6 |\\n| 40 | 1 | 15 | 8 |\\n| 50 | 1 | 18 | 10 |\\n| 60 | 1 | 20 | 12 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"First, CO2 was dosed into the reaction chamber 20 times with pulses of 2 s, next H2O was pulsed 20 times for 50 ms and afterwards CO2 was again pulsed 20 times\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. LiOH/Li2O at 275 °C\\n, 2. Li2O at 300 °C\\n, 3. Li2CO3 at 250 °C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For plasma depositions at 250 °C, delta was unaffected by CO2 and H2O exposure, pointing out the stability of the film. However, the film deposited at a slightly higher temperature of 275 °C strongly reacted with CO2, whereas for the film deposited at 300 °C, delta only slightly changes during the frst pulse. Both LiOH and Li2O could react with CO2 to form Li2CO3. the 300 °C film consisting of Li2O is reacting with the H2O forming LiOH. Next, CO2 is pulsed again, and the layer is again reacting to form Li2CO3. Unlike the film deposited at 300 °C, the as-deposited 275 °C film was very reactive towards the first CO2 pulses and therefore (partly) consisted of LiOH. For all other fims, which include plasma ALD films deposited at 50–250 °C and thermal ALD films deposited at 50–300 °C, the change in Delta was negligibly small, indicating that almost no reaction with H2O or CO2 occurred.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":552,"height":526}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/N. Hornsveld et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":558,"height":531,"image_format":"jpeg","image_sha256":"7f778537308962d6097e460f66c2be82c4573463d58b8c38750637ed2c2fe640","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_21_fig_10.jpg","caption":"Fig. 10 (a) Impedance spectroscopy of $50 \\mathrm{nm} \\mathrm{Li_2CO_3}$ films prepared by thermal (blue) and plasma-assisted (red) ALD at $150^{\\circ}\\mathrm{C}$ and (b) equivalent circuit models used to fit the data.","id":"test/atomic-layer-deposition/experimental-usecase/21/fig_10","sample_id":"atomic-layer-deposition/experimental-usecase/21/fig_10","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"apparatus diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a impedance spectroscopy of 50 nm Li2CO3 films prepared by thermal and plasma-assisted ALD.\"},{\"panel_id\":\"b\",\"text\":\"The figure depicts a equivalent circuits used to fit data with resistors (R_s, R_1) and capacitors (CPE_1, CPE_war).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Condition | Z_Re (kΩ) Range | Z_Im (kΩ) Peak |\\n|-----------|------------------|---------------|\\n| Plasma | 0 – 15 | ~5 |\\n| Thermal | 0 – 30 | ~15 |\"},{\"panel_id\":\"b\",\"text\":\"| Model | Description |\\n|-------|--------------------------------------------------|\\n| I | Rs – (R1 II CPE1) – CPEwar |\\n| II | Rs – (R1 II CPE1) – (R2 II CPE2) – CPEwar |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Li-ion conductivity of plasma and thermal ALD Li2CO3 layers was investigated using impedance spectroscopy. The measurements were performed at open circuit potential (OCP) on 50 nm Li2CO3 flms deposited at 150 °C on a TiN current collector.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both the measured thermal and plasma ALD layers show a behavior characteristic of a solid electrolyte: an intercept with the x-axis at high frequency,\\na semi-circle at medium frequency and a 45° inclined response at low frequency. Such behavior is typically associated with the ionic conductivity through a solid material. The high frequency intercept with the x-axis is generally attributed to the resistance of the cables, contacts and liquid electrolyte, the\\nsemi-circle originates from the ionic conductivity through the solid material and its capacitive response.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"When equivalent circuit model I was tried to fit the response of the plasma deposited Li2CO3 layer, no adequate fit could be obtained. For this reason, model II was used. Thus thermal ALD process uses model I and plasma ALD process uses model II to fit the data.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. For model I used to fit thermal ALD, a low chi2 value of 5 *10-4 is obtained.\\n2. For model II fitting plasma ALD, a low chi2 value of 2 *10-4 is obtained.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":5,"width":483,"height":518},{"panel_id":"b","x":6,"y":532,"width":476,"height":387}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/N. Hornsveld et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":486,"height":919,"image_format":"jpeg","image_sha256":"93cdbe96210709458acf437a4420463fd75f0780d1c79728735d7cdc365e42c4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_21_fig_5.jpg","caption":"Fig. 5 In situ SE thickness measurement for plasma-assisted ALD of $\\mathrm{Li}_{2}\\mathrm{CO}_{3}$ at $300^{\\circ}\\mathrm{C}$ using different $\\mathrm{O}_{2}$ plasma exposure times.","id":"test/atomic-layer-deposition/experimental-usecase/21/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/21/fig_5","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows thickness versus number of cycles of plasma assisted ALD of Li2CO3 for three different plasma exposure times.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | Thickness (nm) - 3 s plasma | Thickness (nm) - 5 s plasma | Thickness (nm) - 20 s plasma |\\n|-------------------|-----------------------------|-----------------------------|------------------------------|\\n| 0 | 0 | 0 | 0 |\\n| 50 | 5 | 8 | 10 |\\n| 100 | 10 | 15 | 18 |\\n| 150 | 15 | 22 | 26 |\\n| 200 | 20 | 28 | 32 |\\n| 250 | 25 | 33 | 38 |\\n| 300 | 30 | 38 | 44 |\\n| 350 | 35 | 43 | 48 |\\n| 400 | 40 | 47 | 50 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"From the thickness evolution with number of ALD cycles for various plasma exposure times, it can be observed, the bulk growth per cycle for different plasma exposure times is similar\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For longer plasma exposure times, the growth per cycle requires a lower number of ALD cycles to become linear, compared to shorter plasma exposure times. The formation of LiOH/Li2O can thus be further stimulated by prolonging the plasma exposure time.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":9,"y":4,"width":558,"height":445}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/N. Hornsveld et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":566,"height":447,"image_format":"jpeg","image_sha256":"00da872fadf822eaeda8b2bb0929b141ac0141118abeb6003c46ba9a46865a0a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_23_figure_6.jpg","caption":"Figure 6. $\\mathrm{Ga}_2\\mathrm{O}_3$ growth rate at 250 and $350^{\\circ}\\mathrm{C}$ as a function of (a) TMGa and (b) $\\mathrm{O}_3$ exposures.","id":"test/atomic-layer-deposition/experimental-usecase/23/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/23/figure_6","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the growth rate of a material as a function of TMGa exposure time at two different temperatures, 250°C and 350°C.\"},{\"panel_id\":\"b\",\"text\":\"The scatter plot illustrates the growth rate of a material as a function of ozone exposure time at two different temperatures, 250°C and 350°C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TMGa exposure (sec) | Growth rate (Å/cycle) 250 °C | Growth rate (Å/cycle) 350 °C |\\n|---|---|---|\\n| 0.5 | 0.4 | 0.5 |\\n| 1.0 | 0.4 | 0.55 |\\n| 2.0 | 0.4 | 0.55 |\"},{\"panel_id\":\"b\",\"text\":\"| Ozone exposure (sec) | Growth rate (Å/cycle) 250 °C | Growth rate (Å/cycle) 350 °C |\\n|---|---|---|\\n| 1 | 0.15 | 0.5 |\\n| 3 | 0.3 | 0.5 |\\n| 5 | | 0.5 |\\n| 6 | 0.4 | 0.55 |\\n| 12 | 0.5 | |\\n| 18 | 0.5 | |\\n| 24 | 0.55 | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.5 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 0.4 and 0.5 Å/cycle, respectively.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The saturation of Ga₂O₃ growth with respect to ozone exposure occurs much faster at 350 °C than at 250 °C. At 350 °C, a saturated growth rate of 0.52 Å/cycle is reached with ozone exposures as short as 3 seconds, whereas at 250 °C, exposure times of at least 12 seconds are required to reach the same growth rate. This temperature dependence indicates that the reaction between ozone and the TMGa-terminated surface is the rate-limiting step in the ALD process, as higher temperatures facilitate more rapid completion of this surface reaction.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At least 12 seconds.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":2,"width":471,"height":370},{"panel_id":"b","x":4,"y":365,"width":471,"height":363}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/David J. Comstock et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":478,"height":731,"image_format":"jpeg","image_sha256":"162527fabdafbf4b36007a44c50e36e6d47cacfed600dbf597e69220b96d3966","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_23_figure_7.jpg","caption":"Figure 7. $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ growth rate as a function of the deposition temperature for fixed TMGa exposures of $0.5\\mathrm{~s~}$ and variable ozone exposures.","id":"test/atomic-layer-deposition/experimental-usecase/23/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/23/figure_7","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between temperature and growth rate for ozone exposure times of 6 seconds, 24 seconds, and 72 seconds.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Growth rate (Å/cycle) |\\n|---|---|\\n| 200 | 0.2 |\\n| 225 | 0.3 |\\n| 250 | 0.4 |\\n| 275 | 0.5 |\\n| 300 | 0.5 |\\n| 325 | 0.5 |\\n| 350 | 0.5 |\\n| 375 | 0.5 |\\n| 400 | 0.5 |\\n| 450 | 0.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.2 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.4 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.5 Å/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"First, the growth rate increases as a function of temperature. It plateaus at 0.5 Å/cycle at 275 °C. Above 400 °C, the growth rate starts to decrease. This means that the temperature window for this ALD process is between 275 and 400 °C.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":475,"height":475}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/David J. Comstock et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":475,"height":475,"image_format":"jpeg","image_sha256":"c139831dc1d020091cd6a5e805eef6dc4a65809b997daa91da186f880ec85276","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_3_figure_5.jpg","caption":"Figure 5. AFM images of a smooth film (top) and a rough film (bottom). The area is $1\\mu \\mathrm{m}\\times 1\\mu \\mathrm{m}$ . The height scale is from 0 to $20 \\mathrm{nm}$ . The total film thickness is $50 \\mathrm{nm}$ . Figure 6. Film roughness of hafnium oxide thin films as a function of deposition temperature and thickness.","id":"test/atomic-layer-deposition/experimental-usecase/3/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/3/figure_5","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between deposition temperature and film thickness, with white points indicating films with RMS roughness <1% and black points indicating films with RMS roughness >5%.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition Temperature (°C) | Film Thickness (nm) | RMS Roughness |\\n|---|---|---|\\n| 50 | 120,4 | <1% |\\n| 100 | 70,4 | <1%|\\n| 125 | 50,3 | <1% |\\n| 150 | 34,9 | <1% |\\n| 150 | 80,3 | >5% |\\n| 150 | 100,8 | >5% |\\n| 150 | 120,8 | >5% |\\n| 200 | 24,5 | <1% |\\n| 200 | 50,1 | >5% |\\n| 200 | 120,8 | >5% |\\n| 250 | 9,7 | <1% |\\n| 250 | 40,1 | >5% |\\n| 300 | 10,1 | <1% |\\n| 300 | 35,1 | >5% |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It represents a specific thickness, where the film switches from being smooth to rough, for a given temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The downside is that it is impossible to produce smooth, thick films at these temperatures.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 100 °C or lower.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At approximately 100 °C .\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":544,"height":384}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/Hausmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":544,"height":384,"image_format":"jpeg","image_sha256":"3c56dab54e8374cc25d651912d3eb5503a946f066b40ee9662b6cf17482d3ca4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_3_figure_7.jpg","caption":"Figure 7. Thickness per cycle as a function of nitrogen purging for the reaction of tetrakis(dimethylamido)zirconium with water at a deposition temperature of $100^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-deposition/experimental-usecase/3/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/3/figure_7","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart illustrates the relationship between deposition temperature and minimum purge time for two reagents: metal amide and water. The required purge times generally decrease with increasing temperature. Water generally requires longer purging times than metal amide.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition Temperature (°C) | Water: Minimum Purge Time (sec) | Metal amide: Minimum Purge Time (sec) |\\n|---|---|---|\\n| 50 | 600 | 300 |\\n| 100 | 300 | 122 |\\n| 150 | 93 | 31 |\\n| 200 | 15 | 7 |\\n| 250 | 7 | 7 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Water.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The curves converge at higher temperatures. This trend occurs because increasing thermal energy significantly accelerates the desorption rate of physisorbed molecules. Consequently, at high temperatures, the difference in physisorption strength between water and the metal amide becomes negligible, and both can be purged almost instantly.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Water is physisorbed more strongly (requires longer purging).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200 °C (or 200 °C - 250 °C).\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":542,"height":441}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/Hausmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":542,"height":441,"image_format":"jpeg","image_sha256":"bb1f3ed9bbe532dd6856cf900be227b27e457757475b9e51fac3a1b4e0514be1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_39_fig_10.jpg","caption":"FIG. 10. (Color online) Integrated intensity of the time-resolved OES measurements of $\\mathrm{CO^{*}}$ $\\mathrm{H^{*}}$ and $\\mathrm{O^{*}}$ during the plasma step of the ALD cycle as a function of the number of successive $\\mathrm{Al(CH_3)_3}$ exposures used in the cycle.","id":"test/atomic-layer-deposition/experimental-usecase/39/fig_10","sample_id":"atomic-layer-deposition/experimental-usecase/39/fig_10","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the integrated intensity of OES signals at different wavelengths (777 nm - O*, 656 nm - H*, 519 nm - CO*) as a function of the number of Al(CH₃)₃ exposures per cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Al(CH3)3 exposures per cycle | Intensity (a.u.) 777 nm – O* | Intensity (a.u.) 656 nm – H* | Intensity (a.u.) 519 nm – CO* |\\n|---|---|---|---|\\n| 0 | 55 | 0 | 0 |\\n| 1 | 50 | 22 | 35 |\\n| 2 | 47 | 42 | 58 |\\n| 3 | 42 | 50 | 67 |\\n| 4 | 41 | 57 | 73 |\\n| 6 | 41 | 62 | 79 |\\n| 10 | 40 | 63 | 81 |\\n| 15 | 39 | 66 | 84 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"40.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"80.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"60.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The H* and CO* signals increase rapidly with increasing precursor dose at low numbers of exposures, reflecting increasing formation of reaction products, and both reach a plateau at approximately six exposures per cycle, indicating saturation of the Al(CH₃)₃ surface reactions. In contrast, the O* signal decreases with increasing precursor dose in the non-saturated regime and levels off at higher doses, consistent with increased oxygen consumption as more surface sites are occupied.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":672,"height":525}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/images/fig_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/Heil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":525,"image_format":"jpeg","image_sha256":"b53a858cf471defa1aab46af5684676866cf05fea233ad718c35565c7eace0cf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_51_fig_4.jpg","caption":"Fig. 4 $\\mathrm{MoO}_x$ thickness measured by spectral ellipsometry data plotted versus the number of ALD cycles","id":"test/atomic-layer-deposition/experimental-usecase/51/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/51/fig_4","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between deposition cycles and thickness for two different durations of oxygen exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| deposition cycles | thickness (nm) 1 second O2 | thickness (nm) 2 second O2 |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 10 | 1 | 1 |\\n| 20 | 1.5 | 1.5 |\\n| 30 | 2 | 2 |\\n| 40 | 3 | 3 |\\n| 50 | 4 | 4 |\\n| 60 | 4.5 | 4.5 |\\n| 70 | 5.5 | 5.5 |\\n| 80 | 5 | 5.5 |\\n| 90 | 6 | 6 |\\n| 100 | 6.5 | 7 |\\n| 110 | 7.5 | 7.5 |\\n| 120 | 8 | 8 |\\n| 130 | 9 | 9 |\\n| 140 | 10 | 10 |\\n| 150 | 10 | 10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The effect of 1 s (green) oxygen plasma exposure vs. 2 s (blue) exposure.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"150.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 10 nm for both samples.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The only difference between the two dataset is the duration of the oxygen plasma exposure, which was either 1 or 2 seconds. After 150 cycles, both samples have reached a thickness of about 10 nm. The trendlines are almost identical and seemingly run parallel, indicating that there is no significant effect on the deposition rate when going from 1 to 2 seconds of oxygen plasma exposure time. This tells us that 1 second is sufficient.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":645,"height":536}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/Ziegler et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":645,"height":536,"image_format":"jpeg","image_sha256":"06cfd5eeb1dd35f2d32002d3786af7f19749a1bab2a0669599483d44dad43625","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_51_fig_8.jpg","caption":"Fig. 8 Solar cell results plotted versus $\\mathrm{MoO}_x$ processes for 10- and 20-nm-thick oxide layers","id":"test/atomic-layer-deposition/experimental-usecase/51/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/51/fig_8","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multiple scatter plot"},{"panel_id":"d","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Scatter plot for the current density (J_SC, in mA cm^-2) showing the performance of the 10 nm and 20 nm MoO layers, and the three different plasma exposures, including their mean values with standard deviation.\"},{\"panel_id\":\"b\",\"text\":\"Scatter plot for the open-circuit voltage (V_OC, in mV) showing the performance of the 10 nm and 20 nm MoO layers, and the three different plasma exposures, including their mean values with standard deviation.\"},{\"panel_id\":\"c\",\"text\":\"Scatter plot for the fill factor (FF) showing the performance of the 10 nm and 20 nm MoO layers, and the three different plasma exposures, including their mean values with standard deviation.\"},{\"panel_id\":\"d\",\"text\":\"Scatter plot for the power conversion efficiency (η) showing the performance of the 10 nm and 20 nm MoO layers, and the three different plasma exposures, including their mean values with standard deviation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | 10 nm mean | 10 nm best | 20 nm mean | 20 nm best |\\n|---|---|---|---|---|\\n| 2 second O2 | 30.1 | 30.3 | 28.6 | 28.8 | \\n| 2 second O2 & Ar | 30.2 | 30.6 | 29.3 | 29.5 |\\n| 1 second O2 | 30.7 | 30.6 | 28.5 | 28.8 |\"},{\"panel_id\":\"b\",\"text\":\"| Sample | 10 nm mean | 10 nm best | 20 nm mean | 20 nm best |\\n|---|---|---|---|---|\\n| 2 second O2 | 630 | 640 | 600 | 620 | \\n| 2 second O2 & Ar | 620 | 630 | 640 | 650 |\\n| 1 second O2 | 575 | 570 | 560 | 565 |\"},{\"panel_id\":\"c\",\"text\":\"| Sample | 10 nm mean | 10 nm best | 20 nm mean | 20 nm best |\\n|---|---|---|---|---|\\n| 2 second O2 | 53 | 55 | 50 | 51 | \\n| 2 second O2 & Ar | 51 | 54 | 51 | 55 |\\n| 1 second O2 | 40 | 41 | 35 | 37 |\"},{\"panel_id\":\"d\",\"text\":\"| Sample | 10 nm mean | 10 nm best | 20 nm mean | 20 nm best |\\n|---|---|---|---|---|\\n| 2 second O2 | 10 | 10.5 | 8.5 | 9 | \\n| 2 second O2 & Ar | 9.5 | 10 | 9.5 | 10 |\\n| 1 second O2 | 7 | 7 | 5.5 | 6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"On average, the 10 nm thick layers have a higher current density and a higher open-circuit voltage. Consequently, the 10 nm thick layers also have a higher fill factor (FF) and a higher power conversion efficiency (η). This means that, on average, the 10 nm thick layers outperform the 20 nm thick layers.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 2-second O₂ plasma process.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 650 mV.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 10.5 %, which was obtained for 10 nm thick layer, which had a 2 second O2 plasma exposure.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":8,"width":515,"height":392},{"panel_id":"b","x":522,"y":10,"width":486,"height":393},{"panel_id":"c","x":4,"y":361,"width":532,"height":547},{"panel_id":"d","x":480,"y":368,"width":528,"height":541}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/Ziegler et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":1011,"height":912,"image_format":"jpeg","image_sha256":"0d0a49cfc73ad967726180e5cdd013d76fbee8494cc3ba1c73b162fa70d1d2dd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_61_figure_3.jpg","caption":"Figure 3. QMS ion current at $m / z$ ratios 16 and 17 for $\\mathrm{H}_2 / \\mathrm{N}_2$ plasmas as a function of $\\mathrm{H}_2$ fraction in the $\\mathrm{H}_2 / \\mathrm{N}_2$ mixture. The $\\mathrm{H}_2 / (\\mathrm{H}_2 + \\mathrm{N}_2)$ mixing ratios on the horizontal axis were determined using the ion currents at $m / z$ ratios 2 and 14, corresponding to $\\mathrm{H}_2^+$ and $\\mathrm{N}^+$ (see the Supporting Information), before igniting the plasma. The total chamber pressure was kept constant at $75\\mathrm{mTorr}$ .","id":"test/atomic-layer-deposition/experimental-usecase/61/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/61/figure_3","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure displays the ion current intensity as a function of the gas phase ratio H₂/(N₂+H₂) for two distinct mass-to-charge ratios: m/z = 16 (likely NH₂⁺ or CH₄⁺) and m/z = 17 (likely NH₃⁺). For both ion species, the ion current increases as the H₂ fraction increases, reaching a peak near a ratio of 0.6. Beyond this point, the current begins to decline. This suggests that intermediate hydrogen enrichment in the plasma favours the generation of these species, while overly hydrogen-rich environments suppress their formation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| H₂/(N₂+H₂) | Ion Current @ m/z = 16 (10⁻⁹ A) | Ion Current @ m/z = 17 (10⁻⁹ A) |\\n|------------|-------------------------------|-------------------------------|\\n| 0.0 | 1.0 | 0.8 |\\n| 0.2 | 2.0 | 1.6 |\\n| 0.4 | 3.0 | 2.2 |\\n| 0.6 | 4.0 | 2.8 |\\n| 0.8 | 3.5 | 2.5 |\\n| 1.0 | 2.0 | 1.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the H₂ fraction increases, the ion currents for both m/z = 16 and m/z = 17 initially increase, suggesting enhanced formation of these species under hydrogen-rich conditions. The peak ion current is observed around a gas ratio of 0.6, beyond which the current declines. This implies an optimal range of hydrogen content for generating maximum ion signal intensity, likely due to competing formation and quenching reactions in the plasma phase.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Optimal H₂ fraction around 0.6 maximizes ion production, excess hydrogen suppresses ion generation, plasma chemistry is tunable via gas composition\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 0.6.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":508,"height":430}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/Vos et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"61","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":508,"height":430,"image_format":"jpeg","image_sha256":"4e7464397f384041fd2c3d86116db5b13fa93f6c90ba94b7cb43881c981e036d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_65_fig_2.jpg","caption":"FIG. 2. Material properties as a function of plasma gas residence time $\\tau$ for $\\mathrm{SiN}_x$ films deposited at $200^{\\circ}\\mathrm{C}$ and $400^{\\circ}\\mathrm{C}$ using $10\\mathrm{s}$ $\\mathbf{N}_2$ plasma exposure at various total gas flows and plasma gas pressures. The films had a thickness of $20\\mathrm{nm}$ or higher. (a) Refractive index at $2\\mathrm{eV}$ for $\\mathrm{SiN}_x$ films deposited at $200^{\\circ}\\mathrm{C}$ . (b) Oxygen and carbon impurity content and (c) wet-etch rates in BHF for $\\mathrm{SiN}_x$ films deposited at $400^{\\circ}\\mathrm{C}$ . For the buffered etch, a stock solution was used of a 7:1 volume ratio of $40\\%$ $\\mathrm{NH_4F}$ in water and $49\\%$ HF in water. The various gas flows are indicated in the legend and the data points are labeled with the associated gas pressures. The lines serve as a guide to the eye.","id":"test/atomic-layer-deposition/experimental-usecase/65/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/65/fig_2","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The refractive index decreases with increasing plasma gas residence time at 200°C.\"},{\"panel_id\":\"b\",\"text\":\"The impurity content increases with increasing plasma gas residence time at 400°C.\"},{\"panel_id\":\"c\",\"text\":\"The wet-etch rate increases with increasing plasma gas residence time at 400°C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Plasma gas residence time (s) | Refractive Index |\\n|----------------|------------------|\\n| 0.1 | 1.9 |\\n| 0.4 | 1.85 |\\n| 0.6 | 1.77 |\\n| 0.8 | 1.75 |\\n| 1.1 | 1.73 |\"},{\"panel_id\":\"b\",\"text\":\"| Plasma gas residence time (s) | Impurity Content oxygen (at. %) |Impurity Content carbon (at. %) |\\n|------------------|-------------------------|-------------------------|\\n| 0.1 | 2.5 |0.5|\\n| 0.3 | 3.5 |0.5|\\n| 0.4 | 4 |1.5|\\n| 0.9 | 5 |1.5|\"},{\"panel_id\":\"c\",\"text\":\"| Plasma gas residence time (s) | Wet-etch Rate (nm/min) |\\n|------------------|------------------------|\\n| 0.1 | 0.5 |\\n| 0.3 | 1 |\\n| 0.4 | 1 |\\n| 0.9 | 2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If the refractive is a measure for the density, then films deposited with long gas residence times have a lower density and are therefore less etch resistant.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plasma pressure, the gas flows, and the plasma gas residence time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1 nm/min.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The argon gas flow and therefore the argon ions in the plasma can have an influence, where the ions can remove more impurities.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":1,"width":609,"height":274},{"panel_id":"b","x":3,"y":277,"width":605,"height":271},{"panel_id":"c","x":2,"y":545,"width":605,"height":304}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/65/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/65/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/65/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/65/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"65","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":611,"height":850,"image_format":"jpeg","image_sha256":"efe30e630380839c20b97612ca6a4432e89e35b1e60036a7b5eef31fc0654de9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG2_a.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG2_a","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG2_a","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This line chart presents the variation of Growth Per Cycle (GPC) with increasing plasma pulse time for two magnetic field strengths (850 mT and 1600 mT) under in-situ and ex-situ measurement conditions. GPC initially decreases rapidly with increasing pulse duration and plateaus near 0.05 nm/cy after about 50 seconds. Higher magnetic field strength (1600 mT) consistently results in slightly higher GPC than 850 mT across all time points, regardless of the measurement method.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Plasma Pulse (s) | GPC (nm/cy) |\\n|---|---|\\n| 0 | 0.11 |\\n| 10 | 0.105 |\\n| 20 | 0.07 |\\n| 30 | 0.06 |\\n| 40 | 0.055 |\\n| 50 | 0.05 |\\n| 60 | 0.05 |\\n| 80 | 0.05 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As plasma pulse time increases, surface reactions proceed more fully, leading to more complete removal or modification of surface species per cycle. This enhanced efficiency saturates after a certain exposure duration, leading to a plateau in GPC. Longer pulses also reduce the chance of unreacted precursors or incomplete surface activation, which initially contributed to higher GPC in shorter pulses.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1600 mT\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Marks etch saturation point, No GPC gain beyond 50 s, Optimizes cycle time for throughput and precision\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":670,"height":545}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG2_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG2_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"not_found"},"width":670,"height":545,"image_format":"jpeg","image_sha256":"581781d562d4d341a28deeb03512aaae5f8b1ddba01bf3b933043a120751e040","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG2_d.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG2_d","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG2_d","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"d","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"d\",\"text\":\"This Raman spectra chart illustrates the vibrational modes of materials exposed to varying oxygen flow fractions through inductively coupled plasma (ICP). The three overlaid spectra correspond to O₂ flow fractions of 0.06, 0.29, and 0.53, with key Raman-active modes labeled along the spectral axis. Peaks corresponding to B₂g and A_g modes, as well as Al₂O₃, are clearly visible and consistent across all conditions, indicating that the overall structure remains stable across varying plasma environments. Minor differences in intensity at select peaks suggest possible changes in crystallinity or defect density influenced by oxygen content during deposition or treatment\"}]","data_extraction":"[{\"panel_id\":\"d\",\"text\":\"| Raman Shift (cm⁻¹) | Normalized Intensity (a.u.) |\\n|--------------------|-----------------------------|\\n| 100 | 0.05 |\\n| 200 | 1.00 |\\n| 300 | 0.60 |\\n| 400 | 0.40 |\\n| 500 | 0.55 |\\n| 600 | 0.60 |\\n| 700 | 0.50 |\\n| 800 | 0.45 |\\n| 900 | 0.50 |\\n| 1000 | 0.60 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the O₂ flow fraction from 0.06 to 0.53 does not significantly alter the positions of the Raman peaks, indicating that the chemical structure and vibrational modes remain largely consistent. However, subtle variations in peak intensities are observed. These changes suggest minor modifications in the material’s crystallinity or defect states, likely due to different oxidation conditions during treatment. For example, a higher flow fraction might reduce the presence of carbon-related defects or enhance oxide formation, subtly affecting Raman-active modes without drastically shifting peak positions\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"B₂g, A_g, and Al₂O₃ modes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"O₂ flow fraction through ICP 0.06, 0.29, 0.53\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"d","x":0,"y":0,"width":728,"height":556}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG2_d.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG2_d.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"d","first_classification_label":"multiple scatter plot","caption_source":"not_found"},"width":728,"height":556,"image_format":"jpeg","image_sha256":"ce5658d7fa0ea8d030f7abb86a48378a4d26172d99c24396871ae9193f080ede","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG3_a.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG3_a","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG3_a","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents Raman spectra showing how the vibrational modes of a sample evolve with increasing inductively coupled plasma (ICP) power, ranging from 50 W to 950 W. The x-axis tracks Raman shift (in cm⁻¹), while the y-axis shows normalised intensity. Characteristic vibrational peaks are labeled with their symmetry assignments (e.g., B₂g, Ag), indicating specific phonon modes. Al₂O₃-associated features are also noted at key positions. As the ICP power increases, some peaks show a gradual reduction in intensity, suggesting potential structural or compositional changes under higher plasma energy. The consistent location of the phonon modes indicates the preserved crystal structure, while intensity differences reveal subtle variations due to processing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Raman Shift (cm⁻¹) | Normalized Intensity @ 50 W | 200 W | 400 W | 600 W | 950 W |\\n|--------------------|-----------------------------|--------|--------|--------|--------|\\n| 100 | 0.05 | 0.05 | 0.06 | 0.07 | 0.08 |\\n| 150 | 0.10 | 0.10 | 0.11 | 0.12 | 0.12 |\\n| 200 (B₂g) | 1.00 | 0.98 | 0.96 | 0.93 | 0.90 |\\n| 250 (Ag) | 0.55 | 0.53 | 0.50 | 0.48 | 0.45 |\\n| 300 (B₂g) | 0.70 | 0.68 | 0.66 | 0.63 | 0.60 |\\n| 350 (Ag) | 0.35 | 0.34 | 0.33 | 0.31 | 0.30 |\\n| 400 | 0.20 | 0.20 | 0.20 | 0.20 | 0.20 |\\n| 500 (Al₂O₃) | 0.50 | 0.50 | 0.52 | 0.55 | 0.58 |\\n| 600 (Ag) | 0.30 | 0.31 | 0.33 | 0.34 | 0.36 |\\n| 750 (Al₂O₃) | 0.10 | 0.10 | 0.12 | 0.14 | 0.16 |\\n| 950 | 0.08 | 0.08 | 0.09 | 0.10 | 0.11 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As ICP power increases, the overall intensity of the Raman peaks, particularly those associated with B₂g and Ag modes, tends to decrease slightly. This trend may reflect increased disorder or reduced crystallinity introduced by higher plasma exposure. However, the peak positions remain consistent, suggesting that the fundamental bonding structure is preserved. The Al₂O₃-related peaks also exhibit a modest increase in prominence at higher ICP powers, potentially indicating enhanced surface contributions or phase-specific signals.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"B₂g\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"50 W, 200 W, 400 W, 600 W, 950 W\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":644,"height":517}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG3_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG3_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"not_found"},"width":644,"height":517,"image_format":"jpeg","image_sha256":"098c8c172ca1bb618ba7586e7b7c28a77e141940b380ec51ea2d70b65d7fac70","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG5_b.jpg","caption":"FIG. 5. (a) Raman spectra of $\\mathrm{VO}_x$ deposited with varying $\\mathrm{O}_2$ flow fraction. (b) GPC as a function of $\\mathrm{O}_2$ flow fraction. The $y$ axis plotted on the same scale as Fig. 2(a) to highlight the small magnitude of change across the $\\mathrm{O}_2$ flow fraction range investigated.","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG5_b","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG5_b","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"b\",\"text\":\"The figure presents Growth Per Cycle (GPC) measurements as a function of the O₂:Ar flow ratio for both in-situ and ex-situ growth rate (GR) methods. Data points for both measurement types show nearly identical values across all tested flow ratios, indicating a high level of agreement between the two methods. Moreover, the GPC remains steady at approximately 0.06 nm/cycle, suggesting that variations in O₂:Ar ratio within the tested range have minimal effect on the deposition rate.\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"| O₂:Ar Flow Ratio | In-situ GR (nm/cy) | Ex-situ GR (nm/cy) |\\n|------------------|--------------------|---------------------|\\n| 0.05 | 0.062 | 0.063 |\\n| 0.10 | 0.060 | 0.061 |\\n| 0.30 | 0.057 | 0.058 |\\n| 0.50 | 0.054 | 0.055 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Comparing in-situ and ex-situ growth rate measurements helps validate the reliability and accuracy of growth monitoring techniques. In-situ methods provide real-time feedback, which is valuable for process control, while ex-situ measurements confirm final film thickness and uniformity. In this figure, the nearly identical GPC values from both approaches suggest that the in-situ method accurately reflects the actual film growth, thus confirming its suitability for real-time diagnostics and optimisation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.06 nm/cycle\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Stable growth under gas variation, Reduced flow sensitivity, Robust precursor chemistry, Scalable reproducible processing\"}]}]","bbox":[{"panel_id":"b","x":0,"y":0,"width":630,"height":503}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG5_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG5_b.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"b","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":630,"height":503,"image_format":"jpeg","image_sha256":"b3bd728e40e235df434a6181dffd20bed3fb396523e1c1a9e644438c6901b208","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG7_d.jpg","caption":"","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG7_d","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG7_d","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"d","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"d\",\"text\":\"This scatter plot illustrates the atomic percentages of carbon and nitrogen present on a surface following plasma exposure under different chamber pressures, ranging from 1000 to 5000 mTorr. The trends indicate relatively stable nitrogen incorporation between 1000–4000 mTorr, followed by a sharp increase at 5000 mTorr. Carbon follows a similar pattern but with more pronounced variability and a dramatic rise in atomic percentage at the highest pressure. These shifts align with a transition from inductively to capacitively coupled plasma modes, as indicated on the chart, implying that plasma coupling regime influences surface residue accumulation.\"}]","data_extraction":"[{\"panel_id\":\"d\",\"text\":\"| Pressure (mTorr) | Atomic % C | Atomic % N |\\n|---|---|---|\\n| 1000 | 1 | 0.5 |\\n| 2000 | 2 | 1 |\\n| 3000 | 3 | 1 |\\n| 4000 | 2 | 1 |\\n| 5000 | 11 | 6 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As chamber pressure increases from 1000 to 4000 mTorr, the atomic percentages of both carbon and nitrogen remain relatively low and stable, with minor fluctuations. However, at 5000 mTorr, there is a sharp increase in both elements, with carbon rising to 11% and nitrogen to 6%. This suggests a threshold effect, where a change in plasma conditions, specifically a shift to capacitively coupled operation, leads to greater surface contamination or retention of carbonaceous and nitrogenous species. This behavior underscores the importance of controlling pressure to manage surface purity during plasma-based processing\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"5000 mTorr\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"CCP may leave more C/N residue, Lower pressure , ICP , Pressure control\"}]}]","bbox":[{"panel_id":"d","x":0,"y":0,"width":725,"height":550}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG7_d.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG7_d.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"d","first_classification_label":"multiple scatter plot","caption_source":"not_found"},"width":725,"height":559,"image_format":"jpeg","image_sha256":"16d3993ac549a8ab78809787aaf8f3d2fb6d12abeacfdaa0822852e0eded69da","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG8_a.jpg","caption":"FIG. 8. (a) Atomic O density and (b) ion flux and plasma potential as a function of chamber pressure during plasma operation. Some conditions measured in both inductively and capacitively coupled modes.","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG8_a","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG8_a","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows how atomic oxygen density depends on pressure under two plasma conditions: inductively coupled and capacitively coupled. As pressure increases from 1000 to 5000 mTorr, atomic oxygen density rises significantly for the inductively coupled case, following an approximately logarithmic trend. Capacitive coupling data, shown only at higher pressures, yield slightly lower oxygen densities compared to the inductive case. This comparison underscores the enhanced dissociation and plasma density typically achieved in inductively coupled plasma sources.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pressure (mTorr) | Atomic O Density (Inductive) (atoms/m³) | Atomic O Density (Capacitive) (atoms/m³) |\\n|------------------|-------------------------------------------|--------------------------------------------|\\n| 1000 | 5 × 10¹⁹ | – |\\n| 2000 | 2 × 10²⁰ | – |\\n| 3000 | 4 × 10²⁰ | – |\\n| 4000 | 6 × 10²⁰ | 5 × 10²⁰ |\\n| 5000 | 7 × 10²⁰ | 6 × 10²⁰ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Atomic oxygen density increases with pressure for both inductively and capacitively coupled systems, though the inductively coupled configuration achieves higher densities overall. Between 1000 and 5000 mTorr, inductively coupled plasma results in a steady logarithmic increase in oxygen density, peaking at approximately 7 × 10²⁰ atoms/m³. The capacitively coupled data, available only at 4000 and 5000 mTorr, show slightly lower densities, suggesting reduced dissociation efficiency. This trend indicates that inductively coupled systems are more effective at generating reactive oxygen species under similar pressure conditions\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"6 × 10²⁰ atoms/m³.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Pressure (mTorr), Plasma coupling type (indcutive vs. capacitive)\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":628,"height":522}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG8_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG8_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":628,"height":522,"image_format":"jpeg","image_sha256":"b289008bf107b3b51d534ec182977e5a7520668ee1208b64c5bda89cb5de07d6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG9.jpg","caption":"FIG. 9. Plot of the ion flux and plasma potential, following the arguments of Boris et al. (Ref. 2). The data represent the measured experimental data from this work for inductively coupled plasmas (unless otherwise noted). Thin dashed black lines represent the lines of constant energy flux density. The bold red dashed lines represent the approximated critical energy flux density necessary for the onset of crystallization.","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG9","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG9","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot describes the relationship between plasma potential and ion flux across a range of pressures, using different symbols to represent each pressure condition. A red dashed boundary line demarcates a critical energy flux density threshold that separates regimes where crystalline versus amorphous films are likely to form. Data points above this line (higher flux and potential) are associated with crystalline film growth, while those below correspond to amorphous outcomes. The plot also labels “Capacitively coupled” in the lower right, indicating a trend at higher potentials and lower fluxes. This figure helps define the operational window for achieving specific film crystallinity via control of plasma conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pressure (mTorr) | Plasma Potential (V) | Ion Flux (cm⁻²·s⁻¹) |\\n|------------------|----------------------|----------------------|\\n| 830 | ~18 | ~5×10¹⁵ |\\n| 1600 | ~28 | ~2×10¹⁶ |\\n| 2400 | ~45 | ~1.5×10¹⁶ |\\n| 3500 | ~70 | ~5×10¹⁶ |\\n| 4300 | ~100 | ~8×10¹⁶ |\\n| 5000 (hexagon) | ~250 | ~2×10¹⁷ |\\n| 5000 (circle) | ~900 | ~4×10¹⁷ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Crystalline film, Amorphous film, Critical energy flux density separates the two regimes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As plasma potential increases, the ion flux generally rises across all pressure conditions shown. This positive trend is nonlinear and captured more effectively using a log–log scale. Lower pressure markers (e.g., 830 mTorr) cluster at low plasma potentials and ion fluxes, while higher pressure conditions (e.g., 5000 mTorr) span into the high-potential, high-flux region. This suggests that both plasma potential and operating pressure jointly contribute to achieving higher ion flux densities.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 1 x 10^16 cm^-2 s^-1\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":658,"height":528}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":658,"height":528,"image_format":"jpeg","image_sha256":"a151f9369215768ec1d9ee7e5f9fddeb2a7b3166ae574cd5bb71e01cd3ef54ed","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_16.jpg","caption":"Fig. 16. Comparison of simulated deposition rate with experiment [30] as a function of $\\mathrm{NH_3}$ flow rate using the reactor shown in Fig. 15.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_16","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_16","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot represents the variation of deposition rate (microns/hr) of simulated GaN against experimental data from Thrush et al. for a Thomas Swan reactor as a function of ammonia flow. The deposition rate increases steadily from about 0.2 to 1.8 µm/hr with higher NH₃ flow, and the model matches this trend closely. The agreement shows that the reaction mechanism remains accurate even under the high-flow conditions typical of commercial reactors.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ammonia Flow (slm) | Deposition Rate (microns/hr) | |\\n|---|---|---|\\n| 2 | 0.2 | Experiment |\\n| 2 | 0.2 | Simulation |\\n| 3 | 0.5 | Experiment |\\n| 3 | 0.4 | Simulation |\\n| 4 | 0.7 | Experiment |\\n| 4 | 0.6 | Simulation |\\n| 5 | 0.9 | Experiment |\\n| 5 | 0.8 | Simulation |\\n| 6 | 1.0 | Experiment |\\n| 6 | 1.0 | Simulation |\\n| 7 | 1.2 | Experiment |\\n| 7 | 1.2 | Simulation |\\n| 8 | 1.4 | Experiment |\\n| 8 | 1.3 | Simulation |\\n| 9 | 1.6 | Experiment |\\n| 9 | 1.5 | Simulation |\\n| 10 | 1.7 | Experiment |\\n| 10 | -- | Simulation |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The required flow rate is approximately 7 slm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Thomas Swan reactor (likely a vertical rotating-disc type) might hit a practical limit sooner. While both show increasing rates with NH₃ flow, high-flow conditions in commercial reactors can lead to premature gas-phase reactions (particle formation) or excessive precursor waste, imposing a practical and economic ceiling on useful ammonia flow long before the stagnation-flow reactor, which is designed for fundamental study, would.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increase indicates the process is in a reaction-limited regime with respect to nitrogen. Higher ammonia flow increases the concentration of NH₃ and its decomposition products (like NH₂, NH) in the gas phase and at the surface. Since the surface has abundant Gallium (Ga) atoms, the rate-limiting step is the reaction of these nitrogen species with Ga, so their increased flux directly accelerates the deposition rate.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"YES, the close agreement between simulation and experiment across the operational range proves the model's predictive capability for this reactor and chemistry. Therefore, engineers can confidently use the simulation to interpolate or slightly extrapolate the required ammonia flow setting to hit the precise target growth rate of 1.5 µm/hr in a scaled or modified reactor design, saving time and cost on experimental trials.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":5,"width":576,"height":391}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_16.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":581,"height":397,"image_format":"jpeg","image_sha256":"54d63a307f1c3887be10782a9dd31326a0f2d02106c1606f7797b0628daff4c5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_3_fig_5.jpg","caption":"FIG. 5. (Color online) Precursor distributions during the full cycle of flow simulations for: (a) TMA molar fraction for carrier gas flow rate of $20~\\mathrm{sccm}$ ; (b) TMA molar fraction for carrier gas flow rate of $200~\\mathrm{sccm}$ ; (c) water molar fraction for carrier gas flow rate of $20~\\mathrm{sccm}$ ; and (d) water molar fraction for carrier gas flow rate of $200~\\mathrm{sccm}$ . A is located in inlet area and C in the outlet area.","id":"test/atomic-layer-deposition/simulation-usecase/3/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/3/fig_5","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multiple scatter plot"},{"panel_id":"d","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"TMA molar fraction during a full ALD cycle at 20 sccm carrier gas flow. Inlet sample A responds fastest during the 0.015 s pulse, reaching saturation immediately. During the 10 s purge, TMA remains above 50% at most positions, indicating insufficient purging.\"},{\"panel_id\":\"b\",\"text\":\"TMA molar fraction at 200 sccm carrier gas. Pulsing behavior is similar to (a), but purging is much more effective with all samples dropping below 20% concentration.\"},{\"panel_id\":\"c\",\"text\":\"Water molar fraction at 20 sccm carrier gas. Water fills the chamber faster than TMA. High residual concentrations (>80%) persist after purging at positions B, C, D, E.\"},{\"panel_id\":\"d\",\"text\":\"Water molar fraction at 200 sccm carrier gas. Purging efficiency is greatly improved, with concentrations dropping significantly during the purge step.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Flow Time (s) | A (TMA Molar Fraction) | B (TMA Molar Fraction) | C (TMA Molar Fraction) | D (TMA Molar Fraction) | E (TMA Molar Fraction) |\\n|---|---|---|---|---|---|\\n| 0.000 | 0.60 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 0.001 | 0.90 | 0.00 | 0.05 | 0.00 | 0.10 |\\n| 0.002 | 1.00 | 0.02 | 0.18 | 0.02 | 0.22 |\\n| 0.003 | 1.00 | 0.05 | 0.28 | 0.05 | 0.40 |\\n| 0.004 | 1.00 | 0.08 | 0.40 | 0.08 | 0.58 |\\n| 0.006 | 1.00 | 0.15 | 0.60 | 0.15 | 0.80 |\\n| 0.008 | 1.00 | 0.35 | 0.85 | 0.35 | 0.92 |\\n| 0.010 | 1.00 | 0.50 | 0.95 | 0.50 | 0.98 |\\n| 0.012 | 1.00 | 0.60 | 0.98 | 0.60 | 1.00 |\\n| 0.014 | 1.00 | 0.65 | 0.98 | 0.65 | 1.00 |\\n| 10.015 | 0.45 | 0.70 | 0.80 | 0.70 | 0.75 |\\n| 10.016 | 0.02 | 0.72 | 0.78 | 0.72 | 0.65 |\\n| 10.017 | 0.00 | 0.70 | 0.65 | 0.70 | 0.40 |\\n| 10.018 | 0.00 | 0.60 | 0.40 | 0.60 | 0.20 |\\n| 10.019 | 0.00 | 0.40 | 0.20 | 0.40 | 0.10 |\\n| 10.020 | 0.00 | 0.20 | 0.10 | 0.20 | 0.05 |\\n| 10.022 | 0.00 | 0.05 | 0.02 | 0.05 | 0.00 |\"},{\"panel_id\":\"b\",\"text\":\"| Flow Time (s) | A (TMA Molar Fraction) | B (TMA Molar Fraction) | C (TMA Molar Fraction) | D (TMA Molar Fraction) | E (TMA Molar Fraction) |\\n|---|---|---|---|---|---|\\n| 0.000 | 0.60 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 0.001 | 0.90 | 0.00 | 0.05 | 0.00 | 0.10 |\\n| 0.003 | 1.00 | 0.05 | 0.28 | 0.05 | 0.40 |\\n| 0.005 | 1.00 | 0.15 | 0.55 | 0.15 | 0.70 |\\n| 0.007 | 1.00 | 0.35 | 0.85 | 0.35 | 0.90 |\\n| 0.009 | 1.00 | 0.50 | 0.95 | 0.50 | 0.98 |\\n| 0.011 | 1.00 | 0.60 | 1.00 | 0.60 | 1.00 |\\n| 0.013 | 1.00 | 0.65 | 1.00 | 0.65 | 1.00 |\\n| 10.015 | 0.10 | 0.75 | 1.00 | 0.75 | 0.80 |\\n| 10.016 | 0.00 | 0.78 | 0.95 | 0.78 | 0.60 |\\n| 10.017 | 0.00 | 0.75 | 0.80 | 0.75 | 0.30 |\\n| 10.018 | 0.00 | 0.60 | 0.40 | 0.60 | 0.15 |\\n| 10.019 | 0.00 | 0.35 | 0.10 | 0.35 | 0.05 |\\n| 10.020 | 0.00 | 0.15 | 0.02 | 0.15 | 0.00 |\\n| 10.022 | 0.00 | 0.02 | 0.00 | 0.02 | 0.00 |\"},{\"panel_id\":\"c\",\"text\":\"| Flow Time (s) | A (Water Molar Fraction) | B (Water Molar Fraction) | C (Water Molar Fraction) | D (Water Molar Fraction) | E (Water Molar Fraction) |\\n|---|---|---|---|---|---|\\n| 10.015 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 10.016 | 0.85 | 0.20 | 0.10 | 0.20 | 0.25 |\\n| 10.017 | 0.95 | 0.40 | 0.40 | 0.40 | 0.55 |\\n| 10.018 | 1.00 | 0.60 | 0.58 | 0.55 | 0.80 |\\n| 10.019 | 1.00 | 0.80 | 0.78 | 0.70 | 0.90 |\\n| 10.021 | 1.00 | 0.95 | 0.90 | 0.90 | 0.98 |\\n| 10.023 | 1.00 | 0.98 | 1.00 | 0.98 | 1.00 |\\n| 20.030 | 0.95 | 1.00 | 1.00 | 1.00 | 1.00 |\\n| 20.032 | 0.80 | 1.00 | 1.00 | 1.00 | 1.00 |\\n| 20.034 | 0.68 | 1.00 | 1.00 | 1.00 | 1.00 |\\n| 20.036 | 0.55 | 1.00 | 1.00 | 1.00 | 1.00 |\\n| 20.038 | 0.45 | 1.00 | 1.00 | 1.00 | 1.00 |\\n| 20.040 | 0.35 | 1.00 | 1.00 | 1.00 | 1.00 |\"},{\"panel_id\":\"d\",\"text\":\"| Flow Time (s) | A (Water Molar Fraction) | B (Water Molar Fraction) | C (Water Molar Fraction) | D (Water Molar Fraction) | E (Water Molar Fraction) |\\n|---|---|---|---|---|---|\\n| 10.015 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 10.016 | 0.85 | 0.25 | 0.10 | 0.22 | 0.28 |\\n| 10.017 | 0.98 | 0.40 | 0.30 | 0.38 | 0.58 |\\n| 10.018 | 1.00 | 0.60 | 0.55 | 0.55 | 0.82 |\\n| 10.020 | 1.00 | 0.85 | 0.78 | 0.80 | 0.95 |\\n| 10.022 | 1.00 | 0.95 | 0.95 | 0.95 | 1.00 |\\n| 20.030 | 0.02 | 1.00 | 1.00 | 1.00 | 1.00 |\\n| 20.032 | 0.00 | 1.00 | 0.90 | 0.95 | 0.85 |\\n| 20.034 | 0.00 | 0.92 | 0.78 | 0.85 | 0.55 |\\n| 20.036 | 0.00 | 0.60 | 0.40 | 0.70 | 0.25 |\\n| 20.038 | 0.00 | 0.45 | 0.15 | 0.48 | 0.05 |\\n| 20.040 | 0.00 | 0.38 | 0.10 | 0.42 | 0.00 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ALD half-cycle phases: pulsing is the brief 0.015 s precursor injection, purging is the ~10 s period when only carrier gas flows to remove excess precursor.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Sample A is closest to the precursor inlets, so it experiences the highest concentration first before precursors diffuse to other chamber regions.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Water vapor fills the chamber faster than TMA. Comparing panels (a) and (c), water reaches high molar fractions at all sample positions more quickly during the pulse. This is due to water's higher vapor pressure (23.68 Torr vs 9.43 Torr for TMA at 25°C) providing a stronger driving force for injection.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Carrier gas flow rate has little influence on the pulsing step since precursor injection is driven by vapor pressure. However, it strongly affects purging efficiency. At 20 sccm, significant precursor residue remains after purging (>50% for TMA, >80% for water at some positions), while 200 sccm effectively reduces concentrations below 20%.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":570},{"panel_id":"b","x":658,"y":0,"width":638,"height":554},{"panel_id":"c","x":0,"y":564,"width":663,"height":551},{"panel_id":"d","x":659,"y":553,"width":634,"height":565}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/3/Dongqing Pan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1306,"height":1120,"image_format":"jpeg","image_sha256":"0abfd1562598df7a7d24f8295c85d37dd27de8fc822c74d20161afd507f70ad1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_34_figure_3.jpg","caption":"Figure 3. a) $\\mathbb{D} / \\mathbb{D}^{\\prime}$ peak ratio of the graphene spectra for the different $\\mathsf{H}_{2}$ and $\\Omega_2$ plasma treatment times and b) broadening of the Raman G and 2D band as a function of the plasma treatment time, determined from the data in Figure 2.","id":"test/atomic-layer-deposition/simulation-usecase/34/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/34/figure_3","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the D/D' peak ratio for different exposure times of H₂ and O₂ plasmas.\"},{\"panel_id\":\"b\",\"text\":\"The chart displays the width of the Raman G band for different exposure times of H₂ and O₂ plasmas.\"},{\"panel_id\":\"c\",\"text\":\"The chart displays the width of the Raman 2D band for different exposure times of H₂ and O₂ plasmas.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Plasma time (min) | D/D' ratio H2 plasma | D/D' ratio O2 plasma |\\n|---|---|---|\\n| 1 | | 10 |\\n| 2 | 12.5 | 10 |\\n| 3 | 9.5 | 6.5 |\\n| 4 | 11 | |\\n| 5 | 10 | 5 |\\n| 6 | 10 | |\\n| 7 | | |\\n| 8 | 9.5 | |\"},{\"panel_id\":\"b\",\"text\":\"| Plasma Time (min) | Width G (cm⁻¹) H2 plasma | Width G (cm⁻¹) O2 plasma |\\n|---|---|---|\\n| 0 | 10 | 10 |\\n| 1 | | 20 |\\n| 2 | 10 | 25 |\\n| 3 | 15 | 40 |\\n| 4 | 15 | |\\n| 5 | 15 | 45 |\\n| 6 | 20 | |\\n| 7 | | |\\n| 8 | 25 | |\"},{\"panel_id\":\"c\",\"text\":\"| Plasma Time (min) | Width 2D (cm⁻¹) H2 plasma | Width 2D (cm⁻¹) O2 plasma |\\n|---|---|---|\\n| 0 | 35 | 35 |\\n| 1 | | 50 |\\n| 2 | 35 | 50 |\\n| 3 | 35 | 70 |\\n| 4 | 35 | |\\n| 5 | 40 | 110 |\\n| 6 | 40 | |\\n| 7 | | |\\n| 8 | 45 | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Exposure to H2 plasma predominantly leads to the functionalisation of graphene, where the D/D' ratio remains more or less constant around 10 as a function of plasma treatment time. This indicates that the relative amount of functionalization compared to defects stays constant even though the graphene is slowly being etched by the H2 plasma.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 6.5.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The changes are minimal compared to O2 plasma and significant broadening only occurs 4 minutes of H2 plasma exposure.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The effect of H2 plasma exposure is minimal, similar to the Raman G band. However, here significant broadening only occurs after 7 minutes of H2 plasma exposure.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":692,"height":523},{"panel_id":"b","x":712,"y":6,"width":660,"height":242},{"panel_id":"c","x":711,"y":260,"width":662,"height":265}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1375,"height":525,"image_format":"jpeg","image_sha256":"2735e5b9c043003c4ac8f14ffd7655d81f539166ac7c55b9b3fc1d5c3e6a80af","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_34_figure_8.jpg","caption":"Figure 8. Contact resistance determined from the CTLM measurements as a function of the $\\mathrm{H}_{2}$ or $\\mathrm{O}_{2}$ plasma treatment time. A comparison is made between the devices synthesized by AS-ALD and plasma functionalization and EBL and e-beam evaporation (PVD).","id":"test/atomic-layer-deposition/simulation-usecase/34/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/34/figure_8","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between plasma exposure time and contact resistance for samples treated with O₂ Plasma ALD, H₂ Plasma ALD, and H₂ Plasma PVD.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Plasma Exposure Time (min) | Contact Resistance (Ωµm) O2 Plasma ALD | Contact Resistance (Ωµm) H2 Plasma ALD | Contact Resistance (Ωµm) H2 Plasma PVD |\\n|---|---|---|---|\\n| 0 | | | 11500 |\\n| 5 | 4000 | 1000 | 4000 |\\n| 7 | | 500 | |\\n| 10 | 1500 | 1500 | |\\n| 15 | 1500 | 500 | |\\n| 20 | | 500 | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"11.5 ± 0.4 kΩ µm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The contact resistance is relatively constant around 0.5 - 1 kΩ µm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 4 kΩ µm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Generally, all samples show improved contact resistance when exposed to plasma. The surface groups created by the plasma treatment enhance the transport of charge carriers from the metal to the graphene through an increase of the number of chemical bonds between the metal and the graphene. The additional improvement observed for the ALD created contacts could be due to the improved wetting interaction of the deposited Pt with the underlying graphene or an improved Pt morphology due to the use of ALD. Additionally, as opposed to Pt PVD, for the creation of the Pt ALD contacts, a Ti adhesion layer is no longer required. This could also have a positive effect on the metal-graphene interaction, due to the different work function and interaction strength of Ti compared to Pt.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":666,"height":495}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":666,"height":495,"image_format":"jpeg","image_sha256":"e60e22b820f702308b3907e5ba670a7adb3f55f76701d9de144e1afeba87489d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_1_figure_8.jpg","caption":"Figure 8. Graphs showing comparison of number of publications in ALD versus ALEt. Plot constructed from a SCOPUS database search for the terms \"Atomic Layer Etching\" and \"Atomic Layer Depository\", retrieved on December $3^{\\mathrm{rd}}$ 2014.","id":"test/atomic-layer-etching/experimental-usecase/1/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/1/figure_8","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":572}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/Atomic Layer Etching An Industry Perspective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":675,"height":572,"image_format":"jpeg","image_sha256":"3a8a7c9065721d27426a72ad989c007c4f0829a4ac5c51914553b89dab443bf9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_8.jpg","caption":"Figure 8. AlN film thickness vs number of $\\mathrm{XeF}_2 / \\mathrm{BCl}_3$ cycles on single-crystal AlN film for various temperatures. Temperature-dependent etch rates vary from $0.19\\mathrm{\\AA}$ cycle at $212^{\\circ}C$ to $0.93\\mathrm{\\AA}/$ cycle at $298^{\\circ}C$","id":"test/atomic-layer-etching/experimental-usecase/20/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_8","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the thickness loss of AlN as a function of XeF₂/BCl₃ cycles at various temperatures. For all cases, the thickness decreases as the number of cycles increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| XeF₂/BCl₃ Cycles | 212°C | 230°C | 255°C | 263°C | 280°C | 298°C |\\n| --- | --- | --- | --- | --- | --- | --- |\\n| 0 | 0 | 0 | 0 | 0 | 0 | 0 |\\n| 10 | 0 | -5 | -6 | -5 | -6 | -7 |\\n| 20 | -2 | -10 | -12 | -12 | -13 | -17 |\\n| 30 | -4 | -16 | -16 | -19 | -21 | -27 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There is a linear relationship between these two variables.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The AlN thickness decreases as the number of cycles increases for all temperatures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 212 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It can be concluded that the AlN etch rate can be controlled by the XeF2 and BCl3 exposures.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":656,"height":567}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":658,"height":570,"image_format":"jpeg","image_sha256":"f23a0549a70c0db1d7bc934ab3dd6d5d75cd6d2a42cf8a1acc61f8abbb2eb6c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_36d51786c634f31a43a7df7d794ccd77ac03e8f8ed581d6cf1e61c63269b5f7f.jpg","caption":"Fig. 5a shows the GIXRD results for the initial CoO thin film. The as","id":"test/atomic-layer-etching/experimental-usecase/21/36d51786c634f31a43a7df7d794ccd77ac03e8f8ed581d6cf1e61c63269b5f7f","sample_id":"atomic-layer-etching/experimental-usecase/21/36d51786c634f31a43a7df7d794ccd77ac03e8f8ed581d6cf1e61c63269b5f7f","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the change in CoOx thickness over cycles at two temperatures, 200 °C and 250 °C. The rate of change are 0.09 Å/cycle and 0.43 Å/cycle for 200 °C and 250 °C, respectively.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | CoOx Thickness Change (Å) 200 °C | CoOx Thickness Change (Å) 250 °C |\\n| --- | --- | --- |\\n| 0 | 0 | 0 |\\n| 5 | 0 | -2.0 |\\n| 10 | -1.0 | -4.0 |\\n| 15 | -1.8 | -6.0 |\\n| 20 | -2.0 | -8.0 |\\n| 25 | -2.5 | -10.0 |\\n| 30 | -2.8 | -12.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The change in the CoOx thickness is evaluated as a function of the temperature and the number of cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thickness of the CoOx decreases as the number of cycles increases for both temperatures, 200 °C and 250 °C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the figure, a higher temperature (i. e. 250 °C) produces greater changes in the CoOx thickness, reaching an etch per cycle value of 0.43 Å/cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At this temperature, it is possible to achieve a higher etch rate of 0.43 Å/cycle compared to 0.09 Å/cycle at 200 °C.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":5,"width":651,"height":563}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/36d51786c634f31a43a7df7d794ccd77ac03e8f8ed581d6cf1e61c63269b5f7f.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/36d51786c634f31a43a7df7d794ccd77ac03e8f8ed581d6cf1e61c63269b5f7f.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":656,"height":570,"image_format":"jpeg","image_sha256":"83baf17b43258fd97e797d283a73834e8bf9a436ad86410818e9de0e0d9677f2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_2.jpg","caption":"Fig. 2. CoO film thickness change versus number of Hacac doses at 250 and $270^{\\circ}C$ Dashed lines show the linear fits.","id":"test/atomic-layer-etching/experimental-usecase/21/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_2","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the change in CoOx thickness over the number of Hacac doses at two different temperatures, 250°C and 275°C. The data points are represented by blue squares and red circles respectively, with black dashed lines indicating the trend and the etch rate per dose (0.08 Å/dose at 250°C and 0.09 Å/dose at 275°C).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Hacac Doses | CoOx Thickness Change (Å) 250 °C | CoOx Thickness Change (Å) 275 °C |\\n| --- | --- | --- |\\n| 0 | 0 | 0 |\\n| 20 | -1.5 | -6.4 |\\n| 40 | -4.0 | -8.4 |\\n| 60 | -4.8 | -9.2 |\\n| 80 | -8.0 | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Spectroscopic ellipsometry is used for thickness measurements in this case.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of Hacac doses increases, it can be seen that the CoO thickness decreases for both temperatures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The highest value, with only a slight difference, is 0.09 Å/dose at 275 °C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Increasing the temperature doesn't result in a significant difference in etch per dose; the film thickness is similar in both cases.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":1,"width":660,"height":561}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":667,"height":566,"image_format":"jpeg","image_sha256":"4b4ecea448b12b58b199f246387288fd263dde088b7a4306fe979ac13058c766","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_12.jpg","caption":"Figure 12. $\\mathrm{WO}_3$ and W thickness versus number of half-cycles during W ALE under self-limiting conditions using $\\mathrm{O}_2 / \\mathrm{O}_3,$ $\\mathrm{BCl}_3,$ and HF as reactants at $207^{\\circ}C$ a $\\mathrm{WO}_3$ thickness showing oscillation of $\\mathrm{WO}_3$ thickness after $\\mathrm{O}_2 / \\mathrm{O}_3$ exposure and $\\mathrm{BCl}_3 / \\mathrm{HF}$ reaction.b)W thickness showing linear reduction versus number of half-cycles with an etch rate of $2.44\\mathrm{\\AA}/$ cycle.","id":"test/atomic-layer-etching/experimental-usecase/25/figure_12","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_12","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the thickness of WO₃ after exposure to O₂/O₃ and BCl₃/HF as a function of the number of half-cycles.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the thickness of W as a function of the number of half-cycles, with an etch rate of 2.44 Å/cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Half-Cycles | WO₃ Thickness (Å) After O₂/O₃ | WO₃ Thickness (Å) After BCl₃/HF |\\n|---|---|---|\\n| 0 | 35 | 27 |\\n| 10 | 42 | 36 |\\n| 20 | 37 | 30 |\\n| 30 | 32 | 25 |\\n| 40 | 29 | 22 |\\n| 50 | 26 | 21 |\\n| 60 | 25 | 17 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Half-Cycles | W Thickness (Å) |\\n|---|---|\\n| 0 | 230 |\\n| 10 | 215 |\\n| 20 | 200 |\\n| 30 | 185 |\\n| 40 | 170 |\\n| 50 | 160 |\\n| 60 | 150 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems that in the initial stages of the process, there still is an increase in thickness of WO3, but it seems to settle towards a constant thickness after 50 half cycles\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, it does not. It could be that the initial thickness of W enables the modification step to have a larger effect, whilst the etching of W remains relatively constant.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2800, 329, and 3150 mTorr s respectively\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"By determining the slope and multiplying this with 2, as the x-axis denotes half-cycles and not full cycles.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":1,"width":665,"height":426},{"panel_id":"b","x":2,"y":431,"width":663,"height":464}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":673,"height":900,"image_format":"jpeg","image_sha256":"810c10b1e6c38485015233458318ac1fced1ff4ea0cf6f11451c91edbb2c1be2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_13.jpg","caption":"Figure 13. Enlargement of $\\mathrm{WO}_3$ thickness versus number of halfcycles showing increase and decrease of $\\mathrm{WO}_3$ thickness after $\\mathrm{O}_2 / \\mathrm{O}_3$ exposure and $\\mathrm{BCl}_3 / \\mathrm{HF}$ reaction.","id":"test/atomic-layer-etching/experimental-usecase/25/figure_13","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_13","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the thickness of WO₃ after exposure to O₂/O₃ and BCl₃/HF at 207°C, measured in Ångströms, as a function of the number of half-cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Half-Cycles | WO₃ Thickness (Å) |\\n|---|---|\\n| 39 | 21.5 |\\n| 40 | 28.93 |\\n| 41 | 21.29 |\\n| 42 | 28.46 |\\n| 43 | 20.58 |\\n| 44 | 27.57 |\\n| 45 | 20.52 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increase in thickness comes from the fact that the top layer is transformed into WO3, so added to the top.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In this case the average of a half cycle is negative, indicating that there is more WO3 removed than added every ALE cycle. If the W film would be infinitely thick, this would result in no complete etch, so in the ideal case there is no slope.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"20.5 angstrom\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.33 angstrom per cycle\"}]}]","bbox":[{"panel_id":"a","x":3,"y":3,"width":665,"height":560}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_13.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":672,"height":567,"image_format":"jpeg","image_sha256":"7f6324f7d779c8a9d76846d48ee80aa9d526ac49316d381947282df470575c25","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_5.jpg","caption":"Figure 5. $\\mathrm{B}_2\\mathrm{O}_3$ thickness versus number of HF exposures showing spontaneous etching of $\\mathrm{B}_2\\mathrm{O}_3$ film at $207^{\\circ}\\mathrm{C}$ . HF exposure was 100 mTorr s, and $\\mathrm{B}_2\\mathrm{O}_3$ etch rate is $\\sim 2\\mathrm{\\AA}$ per HF exposure.","id":"test/atomic-layer-etching/experimental-usecase/25/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_5","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the thickness changes of B2O3 after HF exposures at 207°C. The blue squares represent measurements taken before the HF dose, while the red circles represent those taken after the HF dose.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of HF Exposures | Before HF Dose | After HF Dose |\\n|---|---|---|\\n| 1 | 540 | 538 |\\n| 2 | 538 | 536 |\\n| 3 | 536 | 534 |\\n| 4 | 534 | 532 |\\n| 5 | 532 | 530 |\\n| 6 | 530 | 530 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 angstrom.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Artificially grown, the B2O3 layer on top of the WO3 is not that thick as it is a result of the monolayer modification.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"53 nm.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":665,"height":542}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":672,"height":547,"image_format":"jpeg","image_sha256":"ac2cf95c675da486fd944e7a5d896360a8ab1eb623c367286518232a931861c6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_6.jpg","caption":"Figure 6. $\\mathrm{WO}_3$ etch rate versus reactant exposure during $\\mathrm{WO}_3$ ALE at $207^{\\circ}\\mathrm{C}$ . (a) $\\mathrm{BCl}_3$ exposure was varied with HF exposure held at 200 mTorr s. (b) HF exposure was varied with $\\mathrm{BCl}_3$ exposure held at 327 mTorr s. Figure 7. $\\mathrm{WO}_3$ thickness versus number of half-cycles during $\\mathrm{WO}_3$ ALE at $207^{\\circ}\\mathrm{C}$ under self-limiting conditions.","id":"test/atomic-layer-etching/experimental-usecase/25/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_6","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the thickness of WO₃ after exposure to BCl₃ and HF doses at 207°C, plotted against the number of half-cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Half-Cycles | WO₃ Thickness (Å) |\\n|---|---|\\n| 5 | 97 |\\n| 10 | 84 |\\n| 15 | 75 |\\n| 20 | 65 |\\n| 25 | 55 |\\n| 30 | 48 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This can be determined by calculating the slope and multiplying it with two, as the x-axis shows the number of half-cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"207 degrees celcius.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A technique that can be used to determine the thickness of thin films is ellipsometry.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the decrease in thickness is linear with respect to number of cycles.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":3,"width":668,"height":540}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":672,"height":547,"image_format":"jpeg","image_sha256":"6e040408d19ed409a7800b52a9c70094617cf661b76962255add9be6cb1bc671","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_8.jpg","caption":"Figure 8. Analysis of $\\mathrm{WO}_3$ thickness change after $\\mathrm{BCl}_3$ exposure and HF exposure during $\\mathrm{WO}_3$ ALE at $207^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-etching/experimental-usecase/25/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_8","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot illustrates the thickness of WO₃ at various numbers of half-cycles, with specific arrows indicating etching, conversion, and removal processes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Half-Cycles | WO₃ Thickness (Å) |\\n|---|---|\\n| 9 | 88 |\\n| 10 | 86.5 |\\n| 11 | 84 |\\n| 12 | 82.5 |\\n| 13 | 80 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The full etch step is composed of the conversion of WO3 to B2O3 and the removal of this B2O3 top level.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2.5 angstrom\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It should be, but the graph is misleading. It could be that HF is removed upon HF exposure, but also WO3 is removed according to the y-axis.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"around 4 angstrom per cycle\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":670,"height":554}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":675,"height":561,"image_format":"jpeg","image_sha256":"b8dfd236a9ff4cecf3a994801ae2bb9d5af8b752fab6ef4478cd00153bd43523","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_9.jpg","caption":"Figure 9. $\\mathrm{WO}_3$ thickness versus number of cycles for $\\mathrm{WO}_3$ ALE at 128, 160, 196, and $207^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-etching/experimental-usecase/25/figure_9","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_9","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the thickness of WO₃ as a function of the number of cycles at different temperatures (128°C, 160°C, 196°C, and 207°C). The thickness decreases linearly with increasing cycle number for each temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | 128°C | 160°C | 196°C | 207°C |\\n|------------------|-------|-------|-------|-------|\\n| 0 | 140 | 140 | 140 | 140 |\\n| 5 | 138 | 130 | 128 | 120 |\\n| 10 | 136 | 120 | 116 | 100 |\\n| 15 | 132 | 110 | 102 | 80 |\\n| 20 | 130 | 100 | 90 | 60 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The highest temperature will also result in the highest EPC, this can be concluded based on the slopes of the different lines.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10 angstrom per cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This will be determined by the height of the EPC. This is the lowest for the process at 128 degrees. This process will then also result in the most control.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":665,"height":543}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":670,"height":550,"image_format":"jpeg","image_sha256":"7c5f62693b78ca93a560d65ce09273b82e0351663bda5404e3dbee448e8f5a87","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_27_fig_1.jpg","caption":"Fig. 1. The etch depth of $\\mathrm{Al}_2\\mathrm{O}_3$ per cycle (A/cycle) by Ar sputtering and ALET, measured as a function of 1st grid voltage from 50 to $150\\mathrm{V}$ for the $\\mathrm{Ar}^+$ ion beam source. $\\mathrm{BCl}_3$ gas flow rate of $100~\\mathrm{sccm}$ was used during the 1st adsorption step.","id":"test/atomic-layer-etching/experimental-usecase/27/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/27/fig_1","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the etch rate (in A/cycle) at various first grid voltages (in V) for both conditions: without BCl3 adsorption and with BCl3 adsorption.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 1st Grid Voltage (V) | Etch Rate (A / cycle) without BCl3 adsorption | Etch Rate (A / cycle) with BCl3 adsorption |\\n|---|---|---|\\n| 50 | 0.0 | 0.0 |\\n| 75 | 0.0 | 0.25 |\\n| 100 | 0.0 | 1.0 |\\n| 125 | 0.5 | 1.25 |\\n| 150 | 1.0 | 1.75 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.0 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.0 Å/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Without BCl3 adsorption, material is only being etched at grid voltages higher than 105 V, which corresponds to the Al2O3 substrate itself being etched. With BCl3 adsorption, an increase in etch rate is observed from 0 to 95 V. This means that etch rate is constant between 95 and 105 V. In this small region, only the chemisorbed layer (which is created during BCl3 exposure) is etched, meaning that the process meets the self-limiting reaction requirement between 95 and 105 V, so future experiments will be operated in this range.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":4,"width":589,"height":444}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/27/Atomic layer etching of Al2O3 using BCl3Ar.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":597,"height":447,"image_format":"jpeg","image_sha256":"4d4c94e9fcc1328752117607baa164e5102ed96ed8bb3472866ae55e202748dc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_31_fig_2.jpg","caption":"Fig. 2. Etch rates for $\\mathrm{HfO_2}$ , $\\mathrm{ZrO_2}$ , and $\\mathrm{Al_2O_3}$ films with respect to (a) substrate temperature, (b) RF bias power, (c) Hhfac pulse time, and (d) O radical pulse time.","id":"test/atomic-layer-etching/experimental-usecase/31/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/31/fig_2","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multiple scatter plot"},{"panel_id":"d","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This multi-panel figure evaluates etch per cycle (EPC) for HfO₂, ZrO₂, and Al₂O₃ across four experimental variables relevant to ALE optimisation. Panel (a) shows that EPC increases with substrate temperature, particularly for HfO₂, which reaches >3 Å/cycle by 400 °C, while Al₂O₃ remains inert across the temperature range. Panel (b) reveals an \\\"ALE window\\\" for HfO₂ etching as RF bias power increases, with ZrO₂ showing moderate reactivity and Al₂O₃ remaining largely unaffected. Panels (c) and (d) display saturation-like behavior for Hhfac exposure and O radical exposure, respectively, again showing clear selectivity of the process for HfO₂ and ZrO₂ over Al₂O₃. These trends confirm process controllability and material selectivity critical for high-precision ALE.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | HfO₂ (Å/cycle) | ZrO₂ (Å/cycle) | Al₂O₃ (Å/cycle) |\\n|------------------|----------------|----------------|-----------------|\\n| 100 | 0.5 | 0.2 | 0.0 |\\n| 150 | 1.0 | 0.3 | 0.0 |\\n| 200 | 1.5 | 0.5 | 0.0 |\\n| 250 | 2.0 | 0.7 | 0.0 |\\n| 300 | 2.5 | 0.8 | 0.0 |\\n| 350 | 3.0 | 0.9 | 0.0 |\\n| 400 | 3.2 | 1.0 | 0.0 |\"},{\"panel_id\":\"b\",\"text\":\"| RF Bias Power (W) | HfO₂ (Å/cycle) | ZrO₂ (Å/cycle) | Al₂O₃ (Å/cycle) |\\n|-------------------|----------------|----------------|-----------------|\\n| 0 | 0.5 | 0.2 | 0.0 |\\n| 50 | 1.0 | 0.5 | 0.0 |\\n| 100 | 2.0 | 0.8 | 0.0 |\\n| 150 | 3.0 | 1.0 | 0.0 |\\n| 200 | 3.5 | 1.2 | 0.0 |\\n| 250 | 4.0 | 1.5 | 0.0 |\"},{\"panel_id\":\"c\",\"text\":\"| Hhfac Exposure (sec) | HfO₂ (Å/cycle) | ZrO₂ (Å/cycle) | Al₂O₃ (Å/cycle) |\\n|----------------------|----------------|----------------|-----------------|\\n| 0 | 0.0 | 0.0 | 0.0 |\\n| 2 | 1.0 | 0.5 | 0.0 |\\n| 4 | 2.0 | 0.8 | 0.0 |\\n| 6 | 2.8 | 1.0 | 0.0 |\\n| 8 | 3.0 | 1.2 | 0.0 |\\n| 10 | 3.1 | 1.3 | 0.0 |\"},{\"panel_id\":\"d\",\"text\":\"| O Radical Exposure (sec) | HfO₂ (Å/cycle) | ZrO₂ (Å/cycle) | Al₂O₃ (Å/cycle) |\\n|--------------------------|----------------|----------------|-----------------|\\n| 0 | 0.0 | 0.0 | 0.0 |\\n| 5 | 1.5 | 0.7 | 0.0 |\\n| 10 | 2.5 | 1.0 | 0.1 |\\n| 15 | 3.0 | 1.2 | 0.1 |\\n| 20 | 3.2 | 1.3 | 0.1 |\\n| 25 | 3.3 | 1.4 | 0.1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"EPC increases significantly for HfO₂ and to a lesser extent for ZrO₂ as temperature, RF power, Hhfac exposure, and O radical exposure increase, indicating that both materials are etched efficiently. In contrast, Al₂O₃ remains nearly unaffected under all conditions, suggesting excellent selectivity. The trends indicate that the ALE process can be tuned to target high-k materials like HfO₂ and ZrO₂ while preserving low-k or etch-resistant materials like Al₂O₃, which is valuable for precise pattern transfer in multilayer device architectures\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HfO₂.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Temperature, RF bias power, Hhfac exposure time, O radical exposure time.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":41,"y":20,"width":449,"height":585},{"panel_id":"b","x":560,"y":20,"width":453,"height":578},{"panel_id":"c","x":41,"y":666,"width":449,"height":570},{"panel_id":"d","x":562,"y":666,"width":451,"height":568}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/Atomic layer etching of high-k oxide thin films.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":1014,"height":1239,"image_format":"jpeg","image_sha256":"0eb3a2d08e868e59bf4a10836b9efaa3040505e07ff478899d3d68d69efefc70","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_31_fig_6.jpg","caption":"Fig. 6. Thickness variation of the $\\mathrm{HfO_2}$ film as a function of ALE cycles under repeated injections of Hhfac gas/ $\\mathrm{O_2}$ plasma and Hhfac plasma/ $\\mathrm{O_2}$ plasma at a substrate temperature of $100^{\\circ}\\mathrm{C}$ CCP discharges at a frequency of $13.56\\mathrm{MHz}$ are applied via an RF power generator.","id":"test/atomic-layer-etching/experimental-usecase/31/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/31/fig_6","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares the effect of using Hhfac gas versus Hhfac plasma in combination with O₂ plasma on the etching behavior of HfO₂ at 100 °C. When Hhfac gas is used, there is no measurable reduction in HfO₂ thickness over 50 cycles, indicating zero etch rate. In contrast, using Hhfac plasma results in a clear linear reduction in film thickness, with an etch rate of 1.49 Å/cycle. This difference highlights the critical role of precursor activation (via plasma) in enabling efficient etching under mild thermal conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Process Cycles | HfO₂ Thickness (nm) – Hhfac gas + O₂ plasma | HfO₂ Thickness (nm) – Hhfac plasma + O₂ plasma |\\n|--------------------------|---------------------------------------------|------------------------------------------------|\\n| 0 | 15.0 | 15.0 |\\n| 10 | 15.0 | 13.5 |\\n| 20 | 15.0 | 12.0 |\\n| 30 | 15.0 | 10.5 |\\n| 40 | 15.0 | 9.0 |\\n| 50 | 15.0 | 7.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The use of Hhfac plasma in combination with O₂ plasma leads to a significant reduction in HfO₂ film thickness, demonstrating an etch rate of 1.49 Å/cycle. In contrast, using Hhfac in gas form under the same conditions results in no measurable thickness change, corresponding to an etch rate of 0 Å/cycle. This comparison highlights that plasma activation of the precursor is essential to initiate etching at low temperatures, likely due to enhanced surface reactivity and fragmentation of the Hhfac ligand under plasma conditions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.49 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hhfac gas + O₂ plasma, Hhfac plasma + O₂ plasma\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":589,"height":605}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/Atomic layer etching of high-k oxide thin films.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":589,"height":605,"image_format":"jpeg","image_sha256":"1fe7569fe960f2538553a71676e8e18a2ddbb9cdeac58848eaf20a05de487b47","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_37_fig_4.jpg","caption":"FIG. 4. The thickness of the $\\mathrm{TiO_2}$ layer on Si-OH and Si-H surfaces for $90\\mathrm{ms}$ , $180\\mathrm{ms}$ , and $270\\mathrm{ms}$ $\\mathrm{TiCl_4 / H_2O}$ dosing times as measured by in situ ellipsometry.","id":"test/atomic-layer-etching/experimental-usecase/37/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/37/fig_4","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the thickness of SiOH and SiH layers as a function of cycles, with different exposure times of TiCl4, Ar and H2O.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle | Thickness (nm) SiOH 0.09 / 45 / 0.09 / 45 s | Thickness (nm) SiOH 0.18 / 45 / 0.18 / 45 s | Thickness (nm) SiOH 0.27 / 45 / 0.27 / 45 s | Thickness (nm) SiH 0.09 / 45 / 0.09 / 45 s | Thickness (nm) SiH 0.18 / 45 / 0.18 / 45 s | Thickness (nm) SiH 0.27 / 45 / 0.27 / 45 s |\\n|---|---|---|---|---|---|---|\\n| 0 | 0 | 0 | 0 | 0 | 0 | 0 |\\n| 25 | 1 | 1 | 1 | 0.1 | 0.1 | 0.1 |\\n| 50 | 2 | 2 | 2 | 0.5 | 0.5 | 0.5 |\\n| 75 | 3.5 | 3.5 | 3.5 | 1 | 1 | 1 |\\n| 100 | 5 | 5 | 5 | 2.5 | 2.5 | 2.5 |\\n| 125 | 6.5 | 6.5 | 6.5 | 3.5 | 3.5 | 3.5 |\\n| 150 | 7.5 | 7.5 | 7.5 | 5.5 | 5.5 | 5.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiO2 and Si substrates, with Si-OH and Si-H surface groups, respectively.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 5 nm for all three experimental setups.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 2 nm for all three experimental setups.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"On Si-H substrates, all dosing conditions exhibit a nucleation delay of approximately 25 cycles, followed by an acceleration to a steady growth rate of about 0.05 nm per cycle. On Si–OH substrates, the three dosing conditions also produce nearly identical growth behaviour, with approximately 8 nm of TiO₂ deposited after 150 cycles, and the lowest dosing condition yielding slightly lower thickness consistent with near-saturation dosing. Applying the selectivity definition shows that a selectivity value of 0.9 corresponds to a TiO₂ thickness of about 1.5 nm on the growth surface for all dosing conditions. Overall, the figure demonstrates that near- and over-saturated H₂O dosing does not significantly alter the nucleation delay on Si–H surfaces nor the achievable selectivity window.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":672,"height":572}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/Effect of reactant dosing on selectivity during area-selective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":572,"image_format":"jpeg","image_sha256":"e5bf2bdf456ac75e5d7bf80c22baf8e3d36e59f181f57317c7d66a7b68cd0e24","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_37_fig_5.jpg","caption":"FIG. 5. The thickness of the $\\mathrm{TiO_2}$ layer on $\\mathrm{Si - H}$ as a function of the number of super-cycles using $\\mathrm{TiCl_4 / H_2O}$ dosing times of 90, 180, and $270~\\mathrm{ms}$ as measured by in situ ellipsometry. Data are collected after every five ALD cycles and after each individual ALE cycle. The data for 180 and $270~\\mathrm{ms}$ is offset on the $y$ axis by $1\\mathrm{nm}$ and $2\\mathrm{nm}$ , respectively, to improve visualization.","id":"test/atomic-layer-etching/experimental-usecase/37/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/37/fig_5","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the thickness of the deposited TiO2 layer as a function of super-cycles (combined ALD/ALE cycles). Three data series are plotted with varying TiCl4 and H2O exposure times (0.09, 0.18 and 0.27 for both, respectively).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Super-cycles | Thickness (nm) 0.09 / 45 / 0.09 / 45 s | Thickness (nm) 0.18 / 45 / 0.18 / 45 s | Thickness (nm) 0.27 / 45 / 0.27 / 45 s |\\n|---|---|---|---|\\n| 0 | 0 | 1 | 2 |\\n| 5 | 0.25 | 1.5 | 2.5 |\\n| 10 | 0.25 | 1.5 | 5.5 |\\n| 15 | 0.5 | 1.5 | |\\n| 20 | 0.5 | 1.5 | |\\n| 25 | 0.5 | | |\\n| 30 | 0.75 | | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 0.25 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"About 1.5 nm (0.5 nm when taking into account the offset).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 5.5 nm (3.5 nm when taking into account the offset).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the initial three to five super-cycles, all dosing conditions exhibit similar alternating deposition and etching behaviour, indicating comparable early-stage nucleation resistance on the non-growth surface. Beyond approximately five super-cycles, however, the longest dosing condition (270 ms for both TiCl₄ and H₂O) shows a marked increase in net film accumulation after the ALE steps, signifying more rapid unwanted nucleation when longer ALD doses are combined with ALE. This contrasts with pure ALD behaviour, where increased dose times did not significantly affect nucleation on Si–H, and is attributed to ALE-induced removal of passivating Si–H bonds that promotes formation of Si–O sites favourable for TiO₂ growth. In addition, the figure indicates that the amount of material removed per ALE cycle decreases over successive super-cycles for all dosing conditions, leaving a thin residual layer after etching; this residual thickness, on the order of ~0.2 nm after extended cycling, is interpreted as arising from surface oxidation and formation of non-etchable species rather than incomplete removal of TiO₂.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":492}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/Effect of reactant dosing on selectivity during area-selective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":669,"height":492,"image_format":"jpeg","image_sha256":"aec23ed3fbcf9197aba419647dbdbc8156590bc08218f2b708ffa7a9a03377a3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_37_fig_7.jpg","caption":"FIG. 7. The thickness of the $\\mathrm{TiO_2}$ layer on $\\mathrm{Si - H}$ for $\\mathrm{TiCl_4 / H_2O}$ 90/270 ms and 270/90 ms dosing times as measured by in situ ellipsometry. Data are shown for 15 super-cycles, consisting of 30 ALD and 5 ALE cycles each, with data points taken every five cycles for ALD and every cycle for ALE. The data for 90/270 ms are offset on the y axis by 1 nm to improve visualization.","id":"test/atomic-layer-etching/experimental-usecase/37/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/37/fig_7","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the thickness of two TiO2 layers over super-cycles. Both layers are grown on Si-H and are grown at two different precursor exposure times (90/270 ms for TiCl4/H2O, and 270/90 ms for TiCl4/H2O, respectively).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Super-Cycles | Thickness (nm) 0.09 / 45 / 0.27 / 45 s | Thickness (nm) 0.27 / 45 / 0.09 / 45 s |\\n|---|---|---|\\n| 0 | 1.0 | 0 |\\n| 3 | 1.25 | 0.25 |\\n| 6 | 1.5 | 0.25 |\\n| 9 | 1.5 | 0.25 |\\n| 12 | 2.0 | 0.5 |\\n| 15 | 2.5 | 0.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Si-H.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"30 ALD and 5 ALE cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They differ in exposure time of the precursors during ALD (either 90 ms TiCl4 and 270 ms H2O, or 270 ms TiCl4 and 90 ms H2O).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"15.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":555}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/Effect of reactant dosing on selectivity during area-selective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":669,"height":555,"image_format":"jpeg","image_sha256":"3c1aca0c1d2b20af4731d9cb195327a02c78c5dd425d33800f2d86ccbaa53249","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_44_fig_2.jpg","caption":"FIG. 2. (Color online) Film composition vs sputter time obtained by XPS depth-profiling analysis. The initial AlN film on the Si(111) wafer had a thickness of $\\sim 500\\mathrm{\\AA}$","id":"test/atomic-layer-etching/experimental-usecase/44/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/44/fig_2","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart represents the film composition of (Al, C, N, O, Si) agains Sputtering time (s) obtained by XPS depth-profiling analysis. This image indicates that there is a large concentration of oxygen on the surface that decays as a function of sputtering time.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Composition (at.%) | Sputtering Time (s) | Material |\\n|--------------------|---------------------|----------|\\n| 0 | 40 | Al |\\n| 0 | 10 | C |\\n| 0 | 30 | N |\\n| 0 | 17 | O |\\n| 0 | 0 | Si |\\n| 1000 | 57 | Al |\\n| 1000 | 0 | C |\\n| 1000 | 40 | N |\\n| 1000 | 2 | O |\\n| 1000 | 0 | Si |\\n| 2000 | 40 | Al |\\n| 2000 | 0 | C |\\n| 2000 | 40 | N |\\n| 2000 | 2 | O |\\n| 2000 | 0 | Si |\\n| 3000 | 58 | Al |\\n| 3000 | 0 | C |\\n| 3000 | 40 | N |\\n| 3000 | 2 | O |\\n| 3000 | 0 | Si |\\n| 4000 | 56 | Al |\\n| 4000 | 0 | C |\\n| 4000 | 40 | N |\\n| 4000 | 1 | O |\\n| 4000 | 1 | Si |\\n| 5000 | 13 | Al |\\n| 5000 | 0 | C |\\n| 5000 | 19 | N |\\n| 5000 | 0 | O |\\n| 5000 | 64 | Si |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Surface Contamination: High Carbon (C) and Oxygen (O).\\n\\nAlOₓNᵧ Layer: High O and Al, with some N.\\n\\nBulk AlN Film: High Al and N, low O, with Al > N (Al-rich).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Oxygen (O) concentration is high at the surface and decreases with depth, while Nitrogen (N) is low at the surface and increases inward. This reveals the competition between a surface oxidation route (forming AlOₓ) and the intended nitride formation route (forming AlN). The dominance of the oxidation route at the surface creates the AlOₓNᵧ layer, which must be accounted for as an etching barrier before accessing the target AlN film.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It may lead to a slightly different etch rate compared to perfectly stoichiometric AlN, as the reaction with HF could form a different AlFₓ surface layer.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Surface carbon acts as a contamination barrier that can block the reactant pulses (HF, Sn(acac)₂) from reaching the underlying AlN. This would cause poor etch initiation, non-uniformity, and inconsistent cycle counts. Therefore, an in-situ or pre-etch cleaning step is essential to remove carbon and ensure reproducible ALE.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":3,"width":659,"height":550}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/Thermal atomic layer etching of crystalline aluminum nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":664,"height":553,"image_format":"jpeg","image_sha256":"7ecae6a04743fe0996bb16dafede71e714458ed80909f7554fe434d0306e335b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG10.jpg","caption":"FIG. 10. Resistivities of unetched and etched molybdenum films as a function of film thickness. Resistivity values reported by Kim et al. (Ref. 32) are included for reference.","id":"test/atomic-layer-etching/experimental-usecase/47/FIG10","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG10","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image plots the resistivity as a function of thickness for samples before and after etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Thickness (nm) | Resistivity (µΩ·cm) | Condition |\\n|---------------|----------------------|------------------|\\n| ~5 | 33 | Kim et al. |\\n| ~10 | 25 | After etching |\\n| ~12 | 17 | After etching |\\n| ~15 | 14 | After etching |\\n| ~15 | 13 | Kim et al. |\\n| ~18 | 12 | Before etching |\\n| ~20 | 12 | After etching |\\n| ~25 | 11 | After etching |\\n| ~30 | 10 | After etching |\\n| ~35 | 9 | After etching |\\n| ~40 | 8 | Before etching |\\n| ~45 | 8 | After etching |\\n| ~50 | 7 | Before etching |\\n| ~55 | 7 | Before etching |\\n| ~60 | 7 | Before etching |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Sheet resistances of the films were measured with the fourpoint probe at nine points in a rectangular array along the film surface and the average values were used for calculating resistivities of the films by multiplying the average sheet resistances by the film thicknesses\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etching itself did not seem to affect the resistivity, despite the grain boundaries becoming more distinct. The resistivities of the etched and as-deposited films follow the same trend down to about 20 nm. There were no as-deposited films with thicknesses smaller than 20 nm to serve as a reference, but values from a recent study of ALD molybdenum are included in the graph\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Bulk resistivity of molybdenum is reported to be 5.34 μΩ cm, whereas the films in the present study had at the lowest resistivity of about 8 μΩ cm. In a study by van der Zouw et al., ALD grown molybdenum films showed increased resistivity below 20 nm thickness, and a sharp increase when the thickness was approaching the mean free path of electrons in Mo (11.2 nm). The record low resistivity of 13 μΩ cm at 10 nm thickness claimed by Kim et al. is\\nonly slightly lower than seen here. Based on this, it seems that the increased resistivity is mostly caused by thin film effects rather than the etching.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":673,"height":576}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":680,"height":584,"image_format":"jpeg","image_sha256":"2e1218134ffcb0a7ae5c56fc3b9e21e8b4dc9d41d26ac106d94014f09b8d9264","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG5_b.jpg","caption":"FIG. 5. (a) EPC as a function of temperature using cycles of $4\\mathrm{~s~}\\mathrm{NbCl}_5$ and $3\\mathrm{~s~}\\mathrm{O}_2$ pulses followed by $1\\mathrm{~s~}$ purges. (b) EPC as a function of the $\\mathrm{O}_2$ pulse length at different temperatures using $4\\mathrm{~s~}\\mathrm{NbCl}_5$ pulses and $1\\mathrm{~s~}$ purges.","id":"test/atomic-layer-etching/experimental-usecase/47/FIG5_b","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG5_b","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure plots EPC against oxygen pulse length for different temperatures.\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"| O₂ pulse length (s) | 400 °C | 350 °C | 300 °C | 250 °C |\\n|---|---|---|---|---|\\n| 1 | 3.0 | 1.5 | 0.6 | 0.1 |\\n| 2 | 3.5 | 2.0 | 0.8 | 0.2 |\\n| 3 | 4.0 | 2.5 | 1.2 | 0.3 |\\n| 6 | 4.5 | 2.8 | 1.6 | 0.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The oxidation step was further studied at etching temperatures of 250–400 °C by varying the O2 pulse length\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The EPC does not fully saturate at any of the temperatures, but the growth of EPC slows down gradually. This is most likely due to the forming surface oxide layer acting as a diffusion barrier that inhibits further oxidation\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Oxidation of metals at moderate temperatures generally follows a parabolic rate law. The EPC values seen here are somewhat lower than what would be expected for the parabolic rate law, but at the higher end of the O2 pulse lengths, the EPC might be limited by the dose of NbCl5.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":4,"width":671,"height":571}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG5_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG5_b.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":575,"image_format":"jpeg","image_sha256":"b5efc30202c887efeb949c94d8bcdb14b9f44869a21f8dcef52f15904626055b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_12_figure_8.jpg","caption":"Figure 8. (a) Scatter plot showing the coverage of total HF adsorbed vs the Al-F coverage in the minima shown in Figure 7. The data points are colored according to the corresponding total binding energy per square nanometer (color plot online). The square markers along the diagonal dashed line indicate geometries where the HF coverage is equal to the Al-F coverage. Panels b and c show the change in binding energy per square nanometer with an increase in HF and Al-F coverage, respectively.","id":"test/atomic-layer-etching/simulation-usecase/12/figure_8","sample_id":"atomic-layer-etching/simulation-usecase/12/figure_8","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure compares total HF coverage with Al–F coverage across the adsorption minima from Figure 7. Most data points lie below the dashed diagonal, indicating that increasing HF adsorption does not translate one-to-one into Al–F bond formation, especially at higher coverages.\"},{\"panel_id\":\"b\",\"text\":\"The subfigure shows that the total binding energy per unit area becomes progressively more negative with increasing HF coverage, reflecting stronger overall adsorption as surface loading increases.\"},{\"panel_id\":\"c\",\"text\":\"The subfigure shows a similar trend with Al–F coverage: higher densities of Al–F bonds correlate with more negative binding energies, with the strongest stabilization occurring at high Al–F coverages.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Coverage HF (nm⁻²) | Coverage Al–F (nm⁻²) |\\n|-------------------|----------------------|\\n| ~1 | ~1 |\\n| ~3 | ~1 |\\n| ~5 | ~3 |\\n| ~7 | ~4 |\\n| ~9 | ~5 |\\n| ~10 | ~5 |\\n| ~14 | ~9 |\\n| ~15 | ~7 |\"},{\"panel_id\":\"b\",\"text\":\"| Coverage HF (nm⁻²) | E_bind (eV/nm²) |\\n|-------------------|----------------|\\n| ~1 | ~ -2 |\\n| ~3 | ~ -3 |\\n| ~5 | ~ -8 |\\n| ~7 | ~ -11 |\\n| ~9 | ~ -12 |\\n| ~10 | ~ -14 |\\n| ~13 | ~ -15 |\\n| ~13 | ~ -14 |\\n| ~15 | ~ -16 |\"},{\"panel_id\":\"c\",\"text\":\"| Coverage Al–F (nm⁻²) | E_bind (eV/nm²) |\\n|---------------------|----------------|\\n| ~1 | ~ -3 |\\n| ~3 | ~ -7 |\\n| ~3 | ~ -10 |\\n| ~5 | ~ -12--16 |\\n| ~7 | ~ -16 |\\n| ~10 | ~ -15 |\\n| ~14 | ~ -16 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Al–F coverage increases with HF coverage but remains consistently lower for most configurations. This indicates that a significant fraction of adsorbed HF remains molecular or participates in hydrogen-bonded networks rather than forming Al–F bonds.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 14–15 nm⁻².\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The binding energy becomes more negative.\"}]}]","bbox":[{"panel_id":"a","x":15,"y":26,"width":418,"height":388},{"panel_id":"b","x":439,"y":36,"width":400,"height":378},{"panel_id":"c","x":841,"y":26,"width":566,"height":385}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1409,"height":417,"image_format":"jpeg","image_sha256":"033f91c74bf30aadcaea84365b2fc8f4a2e8fa5165ef13f8d275f8db59deac1b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_14_fig_3.jpg","caption":"Fig. 3. Total etched depths after each cycle of the SiN PE-ALE processes with $\\mathrm{Ar^{+}}$ $\\mathrm{Kr^{+}}$ and $\\mathrm{Xe^{+}}$ ion irradiations, evaluated from the MD simulations of Fig. 2. The EPC averaged over the five cycles are 0.41, 0.17, and $0.08\\mathrm{nm}$ for the PE-ALE processes with $\\mathrm{Ar^{+}}$ $\\mathrm{Kr^{+}}$ and $\\mathrm{Xe^{+}}$ ion irradiations, respectively.","id":"test/atomic-layer-etching/simulation-usecase/14/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/14/fig_3","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents total etched depth as a function of processing cycles for three noble gas ions: argon (Ar), krypton (Kr), and xenon (Xe). Ar demonstrates a steep and consistent increase in etch depth across five cycles, indicating its superior etching efficacy. Kr follows a moderate linear trend, while Xe shows the least depth gain and plateaus after Cycle 3. This suggests that Ar is most effective at enhancing etch performance in this context, while Xe may saturate or be less reactive under the same conditions\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle | Ar (nm) | Kr (nm) | Xe (nm) |\\n|-----------|---------|---------|---------|\\n| Initial | 0.0 | 0.0 | 0.0 |\\n| Cycle 1 | 0.1 | 0.1 | 0.1 |\\n| Cycle 2 | 0.3 | 0.2 | 0.2 |\\n| Cycle 3 | 0.6 | 0.4 | 0.3 |\\n| Cycle 4 | 1.2 | 0.5 | 0.4 |\\n| Cycle 5 | 2.1 | 0.8 | 0.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure evaluates the total etched depth resulting from processing with noble gases Ar, Kr, and Xe over five cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Argon (Ar): highest , Krypton (Kr): moderate , Xenon (Xe): minimal increase\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The steadily increasing etched depth for Ar across cycles suggests it is the most reactive or energetic etchant in this setup, enabling efficient material removal. Kr demonstrates moderate etching capacity with diminishing returns after Cycle 4, possibly due to saturation or lower energy transfer. Xe's depth stabilises early, indicating limited reactivity or surface saturation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":553}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/14/Molecular dynamics simulations of silicon nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":673,"height":553,"image_format":"jpeg","image_sha256":"887430939500f945b57d2ff1f899a19046dfa97d69312133d47f8d76162827a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_21_figure_6.jpg","caption":"Figure 6. Uniformity across a blanket silicon wafer before and after the ALE process. Reproduced with permission, copyright 2013.","id":"test/atomic-layer-etching/simulation-usecase/21/figure_6","sample_id":"atomic-layer-etching/simulation-usecase/21/figure_6","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot compares silicon thickness across the wafer before and after ALE. Thickness decreases uniformly from 87 nm to 40 nm, while the 3σ variation remains ±1.5 nm in both cases. The preservation of the same statistical spread indicates that material removal occurs evenly across the wafer. This demonstrates that ALE maintains wafer-scale uniformity despite substantial thickness reduction\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Condition | Si thickness (nm) | Variation (3σ, nm) |\\n|-------------|------------------|--------------------|\\n| Before etch | 87 | ±1.5 |\\n| After ALE | 40 | ±1.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Uniformity is preserved because each ALE cycle consists of a self-limiting surface modification step followed by controlled, ion-activated removal. The saturation of the modification reaction ensures that all wafer regions experience the same chemically altered layer thickness, independent of local exposure history. Subsequent ion activation removes only this modified layer uniformly, suppressing spatial variations that typically arise in continuous plasma etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thickness decreases from 87 nm before etching to 40 nm after ALE.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Etch response is largely insensitive to local thickness variations.\\n-Each region undergoes nearly identical cycle-by-cycle material removal.\\n-Topography-dependent microloading effects are minimized by self-limiting surface chemistry.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Uniform thickness ensures predictable alignment and interaction between stacked layers in complex device architectures. Variations in underlying film thickness can propagate into overlay errors or interface defects. ALE’s ability to preserve uniformity supports reliable multi-layer integration with tight dimensional control.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":545,"height":385}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/Review Paper -- Atomic Layer Etching Rethinking the Art of Etch.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":550,"height":391,"image_format":"jpeg","image_sha256":"3193f04e0c852e9582bb7dfe56f0e83c3e7161f782ebc70b782927a370191d53","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_11.jpg","caption":"Figure 11. (a) Scatter plot for $\\mathrm{Hf - F}$ coverage versus total HF coverage for the surface coverage values in Table 3. Note that some HF coverages resulted in partial or complete $\\mathrm{Hf - F}$ coverage for different configurations, for example, the coverage of $1.0\\mathrm{HF / nm^2}$ . The square data points are where the adsorbed HF coverage equals $\\mathrm{Hf - F}$ coverage. The circular data points are where partially dissociated HF molecules are present. Plots (b) and (c) show the change in binding energy per square nanometer with an increase in HF and $\\mathrm{Hf - F}$ coverage, respectively.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_11","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_11","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Scatter plot comparing dissociated Hf–F coverage with total HF coverage. Square points lie on the dashed 1:1 line, indicating configurations where HF fully dissociates. Circular points fall below this line, showing partial dissociation at higher coverages and the onset of saturation behavior.\"},{\"panel_id\":\"b\",\"text\":\"Scatter plot showing that Ebind per unit area becomes increasingly negative as total HF coverage increases. The trend suggests stronger net binding with higher surface coverage, with some spread reflecting different adsorption configurations.\"},{\"panel_id\":\"c\",\"text\":\"Scatter plot showing that Ebind per unit area also decreases with increasing Hf–F coverage. Compared to (b), this representation highlights how the degree of dissociation directly correlates with surface stabilization.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Data Series | Total Coverage [HF/nm²] | Hf-F Coverage [Hf-F/nm²] |\\n|----------------|----------------------------------|-----------------------------------|\\n| Squares (on line) | 1.0 | 1.0 |\\n| Squares (on line) | 2.5 | 2.5 |\\n| Circles (deviation) | 2.0 | 1.5 |\\n| Circles (deviation) | 4.0 | 3.0 |\\n| Circles (deviation) | 6.0 | 5.0 |\\n| Circles (deviation) | 8.0 | 6.5 |\\n| Circles (saturation) | 15.0 | 6.0 |\\n| Circles (saturation) | 17.0 | 7.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Coverage [HF/nm²] | Ebind [eV/nm²] | \\n|---|---| \\n| 1.0 | ~ -1.0 | \\n| 2.0 | ~ -3.0 | \\n| 4.0 | ~ -4.5 | \\n| 8.0 | ~ -8.0 | \\n| 8.0 | ~ -9.5 | \\n| 15.0 | ~ -12.0 | \\n| 17.0 | ~ -13.0 |\"},{\"panel_id\":\"c\",\"text\":\"| Coverage [Hf-F/nm²] | Ebind [eV/nm²] |\\n|---|---|\\n| 0.5 | ~ -1.0 |\\n| 2.0 | ~ -3.0 |\\n| 3.0 | ~ -4.5 |\\n| 5.8 | ~ -8.0 |\\n| 6.0 | ~ -12.0 |\\n| 7.0 | ~ -13.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The square points fall on the dashed 1:1 line, indicating complete HF dissociation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The square points follow the 1:1 line, indicating configurations where all adsorbed HF dissociates to form Hf–F. In contrast, the circular points deviate below this line, especially at higher total HF coverages. This suggests that as coverage increases, not all HF molecules dissociate, likely due to site saturation or geometric constraints on the surface. The coexistence of fully and partially dissociated configurations indicates coverage-dependent limits on dissociation.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Hf–F coverage (per nm²).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ebind decreases (becomes more negative) with increasing coverage.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":38,"width":274,"height":315},{"panel_id":"b","x":290,"y":37,"width":274,"height":316},{"panel_id":"c","x":579,"y":31,"width":265,"height":322}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":847,"height":353,"image_format":"jpeg","image_sha256":"e86dda43ca9e5b059dfa4babe8832060d1de99f943e6f48a6aadd26129650566","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_12.jpg","caption":"Figure 12. (a) Scatter plot for $\\mathrm{Zr - F}$ coverage versus total HF coverage for the surface coverage values in Table 4. Note that some HF coverages resulted in partial or complete $\\mathrm{Zr - F}$ coverage for different configurations, for example, the coverage of $1.0\\mathrm{HF / nm^2}$ . The square data points are where the adsorbed HF coverage equals $\\mathrm{Zr - F}$ coverage. The circular data points are where partially dissociated HF molecules are present. Plots (b) and (c) show the change in binding energy per square nanometer with an increase in HF and $\\mathrm{Zr - F}$ coverage, respectively.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_12","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_12","subset":"multiple-scatter-plot","split":"test","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":31,"width":278,"height":317},{"panel_id":"b","x":289,"y":30,"width":280,"height":316},{"panel_id":"c","x":573,"y":31,"width":273,"height":315}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":847,"height":347,"image_format":"jpeg","image_sha256":"c7e1490cdb1915ea35a621e0610ef9150d504e23781ee51515945264ed759e1a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/multiple-scatter-plot/train/metadata.jsonl b/subsets/multiple-scatter-plot/train/metadata.jsonl index d46b840b25ecc247fceb74f23439f7cf96f2fe76..b970f42df4deadee9f63fd61767b44804b0e8e99 100644 --- a/subsets/multiple-scatter-plot/train/metadata.jsonl +++ b/subsets/multiple-scatter-plot/train/metadata.jsonl @@ -1,109 +1,109 @@ -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_12_fig_5.jpg","caption":"Fig. 5. Normalized integrated absorbances of the W-F stretching vibration at $\\sim 680~\\mathrm{cm^{-1}}$ and the $\\mathrm{Si - H}$ stretching vibrations at 2115 and $2275~\\mathrm{cm^{-1}}$ versus $\\mathrm{WF}_6$ exposure during the $\\mathrm{WF}_6$ half-reaction at $425\\mathrm{K}$ .","id":"train/atomic-layer-deposition/experimental-usecase/12/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/12/fig_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/J.W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":600,"height":581,"image_format":"jpeg","image_sha256":"841faa92a4f9945fa27694499581b9817dd445b12852d5cc27def86e0f38d093","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":596,"height":576}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This mulitple line plot represents the normalized, integrated absorbance of key IR vibrations (W–F stretch and Si–H stretches) against the total WF₆ exposure (Pressure * Time) during the WF₆ half-reaction at 425 K. It shows the Si–H signal decaying and the W–F signal growing as exposure increases, both saturating at high exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| WF6 Exposure (Torr·min) | Normalized Integrated Absorbance | Stretch |\\n|-----------------------------------|----------------------------------|---------------|\\n| 0.0 | 0.0 | W–F Stretch |\\n| 0.0 | 0.0 | Si–H Stretch |\\n| 0.1 | 0.9 | W–F Stretch |\\n| 0.1 | 0.1 | Si–H Stretch |\\n| 0.2 | 0.95 | W–F Stretch |\\n| 0.2 | 0.08 | Si–H Stretch |\\n| 0.4 | 1.0 | W–F Stretch |\\n| 0.4 | 0.03 | Si–H Stretch |\\n| 0.6 | 1.0 | W–F Stretch |\\n| 0.6 | 0.03 | Si–H Stretch |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Normalized integrated absorbance is a measure of the total area under an FTIR absorption peak after scaling it relative to a reference value. It is obtained by integrating the absorbance intensity across the specific wavenumber range associated with a vibrational mode. The resulting value is then divided by a chosen baseline or maximum signal so that different spectra can be compared on the same scale.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The W–F curve rises exactly as the Si–H curve falls, proving each new tungsten-fluoride bond directly replaces a silicon-hydride bond. Both curves saturate at the same exposure, confirming the reaction is self-limiting and consumes a fixed number of surface sites. This perfect mirroring shows the half-reaction is complete, reproducible, and ideal for controlled atomic-layer deposition.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface structure transitions completely from Si–H termination to W–F termination as WF₆ exposure increases to the saturation point. The concurrent and complementary nature of the Si–H decay and W–F growth indicates a direct, one-to-one replacement reaction. The saturation of both signals at the same exposure value suggests the reaction consumes a fixed number of surface Si–H sites to produce a corresponding number of W–F sites, defining the stoichiometry of the surface-limited process.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This provides exceptional conformality on high-aspect-ratio 3D structures, a critical advantage. Because the reaction saturates once all surface sites are consumed, it proceeds equally on all exposed surfaces, regardless of geometry. The film property controlled with atomic-scale precision is thickness, as each ALD cycle adds a reproducible, sub-nanometer layer, enabling exact deposition in nanoscale device features.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_12_fig_7.jpg","caption":"Fig. 7. Normalized integrated absorbances of the W-F stretching vibration at $\\sim 680 \\mathrm{cm}^{-1}$ and the $\\mathrm{Si - H}$ stretching vibrations at 2115 and $2275 \\mathrm{cm}^{-1}$ versus $\\mathrm{Si}_2\\mathrm{H}_6$ exposure during the $\\mathrm{Si}_2\\mathrm{H}_6$ half-reaction at $425 \\mathrm{K}$ .","id":"train/atomic-layer-deposition/experimental-usecase/12/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/12/fig_7","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/J.W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":600,"height":586,"image_format":"jpeg","image_sha256":"7491f6e170ee23f7f950aefdf68964bd25d9ebbe7afc51529c5eb8f323bf8e50","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":598,"height":580}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This mulitple line plot represents the normalized, integrated absorbance of key IR vibrations (W–F stretch and Si–H stretches) against the total Si₂H₆ exposure during the WF₆ half-reaction at 425 K. It shows the W–F signal decaying and the Si–H signal growing as exposure increases, both saturating at high exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Si₂H₆ Exposure (Torr min) | Normalized Integrated Absorbance | Stretch |\\n|---|---|-----|\\n| 0.0 | 0.0 | W-F Stretch |\\n| 0.0 | 0.0 | Si-H Stretch |\\n| 0.1 | 0.04 | W-F Stretch |\\n| 0.1 | 0.8 | Si-H Stretch |\\n| 0.2 | 0.007 | W-F Stretch |\\n| 0.2 | 0.9 | Si-H Stretch |\\n| 0.3 | -0.01 | W-F Stretch |\\n| 0.3 | 1 | Si-H Stretch |\\n| 0.4 | -0.01 | W-F Stretch |\\n| 0.4 | 1 | Si-H Stretch |\\n| 0.5 | -0.02 | W-F Stretch |\\n| 0.5 | 1 | Si-H Stretch |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The plateau indicates a self-limiting control mechanism, a hallmark of ALD. Once the reactive Si-H surface sites are fully consumed (absorbance ~ 0) and replaced by W-F species, the reaction stops automatically, meaning extending the exposure time further yields no additional material growth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"0.1 Torr·min (Speed): High throughput, but the Si-H signal is still ~0.3 (30% unreacted), and W-F coverage is only ~80%.\\n\\n0.6 Torr·min (Quality): Slower throughput, but Si-H is fully removed (~0.0) and W-F is saturated (1.0).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At the crossover point, the surface is a heterogeneous mixture of approximately 50% unreacted Si-H bonds and 50% newly formed W-F species.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The saturation value greater than 1.0 indicates a high density of reactive Si–H sites, possibly including higher-order silane species (SiHₓ). Such a hydrogen-rich surface is advantageous because Si–H bonds serve as the reducing agent for WF₆. A larger population of these active sites promotes fast and uniform nucleation of tungsten in the following deposition step.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_13_fig_3.jpg","caption":"FIG. 3. $1\\mathrm{kHz}C - V$ measurements for MOS capacitors, $\\mathrm{Cu(100nm) / 10nm}$ $\\mathrm{Ti - Si - N}$ barrier layer (or without the barrier layer) $\\mathrm{SiO_2}$ $100\\mathrm{nm}) / N$ -type Si. a and b are the $C - V$ profiles for the MOS capacitor without the barrier layer before and after thermal treatment at $600^{\\circ}\\mathrm{C}$ for $60~\\mathrm{min}$ in $\\mathrm{H}_{2}$ $(10\\%)/\\mathrm{Ar}(90\\%)$ respectively.c is the $C - V$ profiles for the MOS capacitor with a $10\\mathrm{nm}$ Ti-Si-N barrier layer after thermal treatment at $800^{\\circ}\\mathrm{C}$ for $60~\\mathrm{min}$ in $\\mathrm{H}_{2}$ $(10\\%)/\\mathrm{Ar}(90\\%)$","id":"train/atomic-layer-deposition/experimental-usecase/13/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/13/fig_3","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/Jae-Sik Min et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":595,"height":567,"image_format":"jpeg","image_sha256":"200bc2cfb4a66c2e0d2342296d85fbe6fc75aaa6455469102a3e99465c4c18c7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":589,"height":563}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the normalized capacitance (C/Cox) against voltage for three different conditions: before thermal treatment, no barrier capacitor at 600°C, and Ti-Si-N (10 nm) capacitor at 800°C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Voltage [V] | Before thermal treatment | No barrier capacitor | Ti-Si-N capacitor |\\n| --- | --- | --- | --- |\\n| -15 | 0.21 | 1.00 | 0.19 |\\n| -10 | 0.22 | 1.00 | 0.20 |\\n| -5 | 0.35 | 0.60 | 0.25 |\\n| 0 | 1.00 | 0.90 | 1.00 |\\n| 5 | 1.00 | 1.00 | 1.00 |\\n| 10 | 1.00 | 1.00 | 1.00 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For both curves, the MOS capacitor does not have the barrier layer.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For all the curves, the normalized capacitance exhibits the same behavior at voltage values above 1V: it remains constant as the voltage increases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately at -3V.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Cu atoms can enter the Si and form deep donor levels. These levels can act as the generation and recombination centers of electron-hole pairs.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_25_figure_3.jpg","caption":"Figure 3. MPC for 400 ALD cycles of either $\\mathrm{ZnO}$ (red diamonds) or $\\mathrm{GeO}_y$ (blue squares). The deposition of $\\mathrm{ZnO}$ was interrupted after 200 cycles by performing a single $\\mathrm{GeO}_y$ cycle before depositing another 200 cycles of $\\mathrm{ZnO}$ . Similarly, the deposition of $\\mathrm{GeO}_y$ was interrupted after 200 cycles by performing a single $\\mathrm{ZnO}$ cycle before depositing another 200 cycles of $\\mathrm{GeO}_y$ .","id":"train/atomic-layer-deposition/experimental-usecase/25/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/25/figure_3","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/Adam Hultqvist et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":503,"height":350,"image_format":"jpeg","image_sha256":"08936291d7c61e451c40bcffe53e87a2b96ae4076204cb6e560cd3ad3516c0ae","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":501,"height":349}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure plots the mass per cycle (MPC) during 400 ALD cycles for ZnO and GeOₓ films. Each deposition was interrupted after 200 cycles by inserting a single cycle of the opposite material, creating ZnO/GeOₓ/ZnO and GeOₓ/ZnO/GeOₓ sequences\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle Number | ZnO / 1 cycle GeOₓ / ZnO (ng/cm²) | GeOₓ / 1 cycle ZnO / GeOₓ (ng/cm²) |\\n|--------------|------------------------------------|--------------------------------------|\\n| 0 | 140 | 20 |\\n| 50 | 145 | 22 |\\n| 100 | 147 | 23 |\\n| 150 | 148 | 24 |\\n| 200 (Interruption) | 150 | 50 |\\n| 250 | 152 | 24 |\\n| 300 | 153 | 25 |\\n| 350 | 155 | 26 |\\n| 400 | 158 | 27 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The deposition of ZnO was interrupted after 200 cycles by performing a single GeOy cycle before depositing another 200 cycles of ZnO. Similarly, the deposition of GeOy was interrupted after 200 cycles by performing a single ZnO cycle before depositing another 200 cycles of GeOy. As one continuous process is interrupted, this is called an interruption experiment\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"An interruption experiment was performed to further understand the dynamics of the inhibition seen when mixing ZnO and GeOy subcycles into ZGO supercycles\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Only a minor transient in MPC was seen after the ZnO process was interrupted with a single GeOy cycle.\\n 2. In contrast, when the GeOy process was interrupted by a single ZnO cycle, the MPC was lowered for more than 100 consecutive GeOy cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The implication of this for the ZGO supercycle processes would be that the more the GeOy cycles used in a row, the more the Ge−OH on the surface and the more the reaction sites end up being poisoned during the DEZ exposure. As a result, the GPC would decrease as the amount of GeOy cycles in the ZGO supercycle increases.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_25_figure_6.jpg","caption":"Figure 6. Optical absorption as a function of the cation ratio, $x_{i}$ of a TGO and $(\\hat{1})$ ZGO films deposited on fused silica.","id":"train/atomic-layer-deposition/experimental-usecase/25/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/25/figure_6","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/Adam Hultqvist et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":450,"height":653,"image_format":"jpeg","image_sha256":"87f4deccaaffc9687ffc6b7a61ca01ec4342d2049b9cc1c97604139ee6e614e7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":301,"width":448,"height":348},{"panel_id":"a","x":0,"y":1,"width":446,"height":302}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows tauc plot for TGO at various GeOx concentrations.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows tauc plot for ZGO at various GeOx concentrations.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| E (eV) | x = 0% | x = 6.5% | x = 7.7% | x = 10% | x = 16% | x = 30% |\\n|--------|--------|----------|----------|---------|---------|---------|\\n| 3.0 | 1000 | 800 | 700 | 600 | 500 | 200 |\\n| 3.5 | 2500 | 2200 | 2100 | 1900 | 1700 | 800 |\\n| 4.0 | 4000 | 3700 | 3500 | 3300 | 3000 | 1500 |\\n| 4.5 | 5500 | 5200 | 5000 | 4700 | 4300 | 2200 |\\n| 5.0 | 6000 | 5800 | 5600 | 5300 | 4900 | 2800 |\"},{\"panel_id\":\"b\",\"text\":\"| E (eV) | x = 0% | x = 3.2% | x = 12% | x = 19% | x = 32% | x = 37% |\\n|--------|--------|----------|---------|---------|---------|---------|\\n| 3.0 | 800 | 600 | 400 | 300 | 200 | 100 |\\n| 3.5 | 2200 | 1900 | 1600 | 1400 | 1000 | 700 |\\n| 4.0 | 3700 | 3400 | 3000 | 2700 | 2200 | 1800 |\\n| 4.5 | 5200 | 4900 | 4500 | 4100 | 3500 | 3000 |\\n| 5.0 | 6000 | 5800 | 5400 | 5000 | 4400 | 3800 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Eg increased as the ZGO cation ratio increased. The ZnO was found to be able to incorporate small amounts of Ge into the wurtzite lattice and thereby\\nincrease both conductivity and Eg, while larger amounts led to a high resistivity and worse crystal quality\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. For maximum doping of TGO 0.30, Eg = 3.5 eV\\n2. For ZGO, ZGO 0.32 gives 4.11 eV and \\n3. ZGO 0.32, Eg = 4.49 eV\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The bandgap Eg slowly increased as the cation ratio increased\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_2.jpg","caption":"Figure 2. Growth rate for ALD ITO versus percentage of $\\mathrm{SnO_2}$ cycles determined using VASE $(\\bullet)$ and XRF $(\\nabla)$ . Solid line guides the eye, and dashed line shows expected growth rates calculated using a rule-of-mixtures formula.","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":583,"height":586,"image_format":"jpeg","image_sha256":"f1b7ac677e57f609ec67bffcd23ddf8f8a17adcc301100bc1014c17faeaa2bcb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":583,"height":586}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the variation in growth rate (in Å/cycle) as a function of SnO₂ cycle percentage. Measurements from ellipsometry and XRF are plotted, along with a dashed line representing the rule of mixtures. Both techniques show a decreasing trend in growth rate with increasing SnO₂ cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| % SnO₂ Cycles | Ellipsometry (Å/cycle) | XRF (Å/cycle) |\\n|---------------|-------------------------|----------------|\\n| 0 | 1.75 | 1.60 |\\n| 1 | 1.45 | 1.40 |\\n| 2 | 1.35 | 1.30 |\\n| 3 | 1.25 | 1.20 |\\n| 4 | 1.15 | 1.10 |\\n| 5 | 1.05 | 1.00 |\\n| 10 | 0.95 | 0.90 |\\n| 15 | 0.85 | 0.80 |\\n| 20 | 0.75 | 0.70 |\\n| 25 | 0.65 | 0.60 |\\n| 30 | 0.55 | 0.50 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The growth rate decreases steadily as the % SnO₂ cycles increases, for both ellipsometry and XRF measurements, with ellipsometry consistently reading higher.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, the trend is nonlinear, especially in the low % SnO₂ region.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ellipsometry, X-ray fluorescence (XRF), Rule of Mixtures model\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It represents a theoretical growth rate expected from a weighted average of individual components.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_4.jpg","caption":"Figure 4. Growth rate versus ALD cycles measured using in situ QCM during ITO growth using $10\\%$ $\\mathrm{SnO_2}$ cycles.","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_4","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":575,"height":583,"image_format":"jpeg","image_sha256":"03652fa56847d52bdceb2812be97b195c7205678cb117db06e9fb3555b1905dd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":575,"height":583}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the growth rate (Å/cycle) of SnO₂ and In₂O₃ as a function of ALD cycles. The SnO₂ growth rate exhibits periodic dips, while the In₂O₃ growth remains relatively steady with minor fluctuations.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD Cycles | SnO₂ | In₂O₃ |\\n|---|---|---|\\n| 0 | 1.15 | 1.15 |\\n| 5 | 1.20 | 1.20 |\\n| 10 | 1.10 | 1.10 |\\n| 15 | 1.25 | 1.25 |\\n| 20 | 1.30 | 1.30 |\\n| 25 | 1.20 | 1.20 |\\n| 30 | 1.10 | 1.10 |\\n| 35 | 1.25 | 1.25 |\\n| 40 | 1.30 | 1.30 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"SnO₂ shows sharp dips at regular intervals, suggesting a periodic change, while In₂O₃ growth rate remains relatively stable.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SnO₂\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SnO₂ growth may be affected by precursor pulsing or surface saturation ,In₂O₃ growth is more consistent, Useful for tuning multilayer structures.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_27_fig_2.jpg","caption":"Fig. 2. AES depth profile (a) and impurity contents (b) of TiN films deposited by remote PEALD method using TDMAT precursor and nitrogen plasma.","id":"train/atomic-layer-deposition/experimental-usecase/27/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/27/fig_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/Ju Youn KIM et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":553,"height":970,"image_format":"jpeg","image_sha256":"ed7dd6b7dabb9b2e15b5499dea2b3dd7e7f67e296a8206d3036e03d4f954cedd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":0,"width":538,"height":422},{"panel_id":"b","x":0,"y":498,"width":552,"height":436}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The atomic concentration of various elements throughout a film, with carbon and oxygen decreasing deeper in the film.\"},{\"panel_id\":\"b\",\"text\":\"Atomic concentrations of carbon and oxygen as function of deposition temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sputter Time (min) | C | O | O of SiO₂ | Ti | N | Si |\\n|---|---|---|---|---|---|---|\\n| 0 | 4 | 6 | 0 | 39 | 53 | 0 |\\n| 5 | 4 | 5 | 0 | 37 | 53 | 0 |\\n| 10 | 4 | 5 | 0 | 36 | 50 | 5 |\\n| 15 | 4 | 3 | 0 | 35 | 45 | 10 |\\n| 20 | 4 | 0 | 10 | 30 | 40 | 20 |\\n| 25 | 3 | 0 | 25 | 25 | 30 | 25 |\\n| 30 | 3 | 0 | 35 | 20 | 20 | 30 |\\n| 35 | 0 | 0 | 45 | 15 | 15 | 30 |\\n| 40 | 0 | 0 | 50 | 10 | 10 | 30 |\\n| 45 | 0 | 0 | 55 | 5 | 5 | 30 |\\n| 50 | 0 | 0 | 60 | 0 | 0 | 35 |\"},{\"panel_id\":\"b\",\"text\":\"| Deposition Temperature (°C) | Carbon | Oxygen |\\n|---|---|---|\\n| 150 | 11 | 10 |\\n| 200 | 7 | 6 |\\n| 250 | 3 | 3 |\\n| 300 | 4 | 3 |\\n| 350 | 5 | 3 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The lowest impurities are achieved at 250 degrees C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A common source of carbon impurities is the precursor ligands. Oxygen impurities can arise due to background water in the reactor which is incorporated by the plasma\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This is due to the penetration depth of the measurement method which is likely to be around 5-10 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TiN was deposited on silicon oxide, this is shown by the Si and O from SiO2 signal.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_32_figure_2.jpg","caption":"Figure 2. Growth rates of thermal and PE-ALD $\\mathrm{Ta_2O_5}$ as a function of water and oxygen plasma exposure time $(t_{\\mathrm{r}})$ on $\\mathrm{Si(001)}$ substrate at $T_{\\mathrm{s}} = 250^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/32/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/32/figure_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/W. J. Maeng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":670,"height":503,"image_format":"jpeg","image_sha256":"e050b126404a37a5b13e1dec33ffe9118fd42889b19d03323f98e04fef926d10","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":670,"height":503}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares growth rates of thermal ALD (using H₂O) and PE-ALD (using O₂ plasma) for Ta₂O₅ as a function of reactant exposure time at 250°C. Both methods exhibit saturation behavior for t_r ≥ 1 s, with PE-ALD achieving a higher saturated growth rate (~1.2 Å/cycle) compared to thermal ALD (~0.85 Å/cycle).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| t_r, s | Growth rate thermal ALD (Å/cycle) | Growth rate PE-ALD (Å/cycle) |\\n|---|---|---|\\n| 0 | 0.05 | 0.08 |\\n| 0.25 | 0.30 | 0.40 |\\n| 0.5 | 0.75 | 0.75 |\\n| 1 | 0.82 | 1.10 |\\n| 2 | 0.83 | 1.12 |\\n| 3 | 0.84 | 1.14 |\\n| 5 | 0.85 | 1.14 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"PE-ALD achieves approximately 1.2 Å/cycle while thermal ALD reaches approximately 0.85 Å/cycle, making PE-ALD about 40% faster.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thermal ALD uses water vapor, while PE-ALD uses oxygen plasma.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The higher growth rate in PE-ALD is attributed to the greater reactivity of the oxygen plasma species, which include atomic oxygen and activated oxygen molecules. These reactive species can more efficiently oxidize the adsorbed PDMAT precursor and potentially create more reactive surface sites for subsequent adsorption cycles compared to water vapor in thermal ALD.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Both methods show saturation of growth rate for reactant exposure times greater than approximately 1 second.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_32_figure_3.jpg","caption":"Figure 3. Growth rates of thermal and PE-ALD $\\mathrm{Ta_2O_5}$ as a function of growth temperature $T_{\\mathrm{s}}$ .","id":"train/atomic-layer-deposition/experimental-usecase/32/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/32/figure_3","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/W. J. Maeng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":684,"height":533,"image_format":"jpeg","image_sha256":"7aad86506f50da1c24260d4860e54d192547c2a1d5f2e2cb91aa41faac97e275","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":684,"height":533}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the temperature dependence of Ta₂O₅ growth rate for thermal ALD and PE-ALD. Both methods exhibit three regimes: elevated growth rates at low temperatures, a stable ALD window in the middle, and increasing growth rates at high temperatures due to precursor decomposition. The ALD window spans 200 to 250°C for thermal ALD and 150 to 250°C for PE-ALD, demonstrating that PE-ALD enables ALD growth at approximately 50°C lower temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| T_s, °C | Growth rate thermal ALD (Å/cycle) | Growth rate PE-ALD (Å/cycle) |\\n|---|---|---|\\n| 100 | - | 1.40 |\\n| 125 | 1.32 | - |\\n| 150 | 1.20 | 1.20 |\\n| 175 | - | 1.18 |\\n| 200 | 0.90 | 1.17 |\\n| 250 | 0.85 | 1.15 |\\n| 275 | - | 1.25 |\\n| 300 | 1.00 | - |\\n| 500 | 1.58 | 1.70 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ALD window is 200 to 250°C for thermal ALD and 150 to 250°C for PE-ALD.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At high temperatures, the PDMAT precursor undergoes thermal decomposition before the self-limiting surface reaction can complete. This leads to continuous CVD-like deposition rather than true ALD, resulting in higher apparent growth rates. The loss of self-limitation compromises the precise thickness control that is characteristic of ALD.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"PE-ALD uses oxygen plasma containing highly reactive species such as atomic oxygen and activated oxygen molecules. These radicals have sufficient reactivity to oxidize the adsorbed precursor even at lower temperatures where water vapor in thermal ALD would be insufficiently reactive. In fact, the authors note that Ta₂O₅ could not be deposited without plasma at temperatures below 250°C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 1.4 Å/cycle.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_35_figure_4.jpg","caption":"Figure 4. Composition of GST films as a function of (a) $\\mathrm{GeCl}_2\\cdot \\mathrm{C}_4\\mathrm{H}_8\\mathrm{O}_2$ pulse length and (b) $\\mathrm{GeTe / (GeTe + Sb_2Te_3)}$ cycling ratio. $\\mathrm{SbCl}_3$ and $(\\mathrm{Et}_3\\mathrm{Si})_2\\mathrm{Te}$ pulse lengths were always $1.0~\\mathrm{s}$ and purges were $2.0~\\mathrm{s}$ .","id":"train/atomic-layer-deposition/experimental-usecase/35/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/35/figure_4","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/Viljami Pore et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":636,"height":270,"image_format":"jpeg","image_sha256":"79b3569ff9c435400c8cf0aa89660172dd90e2d8b66944edb9f5b2bb894a5bbd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":5,"width":312,"height":265},{"panel_id":"b","x":332,"y":10,"width":303,"height":259}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the composition of a Ge, Sb, and Te film at different pulse lengths of GeCl₄-dioxane.\"},{\"panel_id\":\"b\",\"text\":\"The scatter plot displays the composition of a Ge, Sb, and Te film at various cycles of GeTe/(GeTe+Sb₂Te₃).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| GeCl₄-dioxane pulse length (s) | Composition (at.%) Ge|Composition (at.%) Sb|Composition (at.%) Te|\\n|---|---|---|---|\\n| 1 | 15 |35|50|\\n| 2 | 25 |25|50|\\n| 3 | 30 |20|50|\\n| 4 | 30 |20|50|\\n| 6 | 30 |20|50|\"},{\"panel_id\":\"b\",\"text\":\"| GeTe/(GeTe+Sb₂Te₃) cycling | Composition (at.%) Ge|Composition (at.%) Sb|Composition (at.%) Te|\\n|---|---|---|---|\\n| 0.25 | 20 |30|50|\\n| 0.33 | 22 |28|50|\\n|0.36|28|22|50|\\n| 0.5 | 30 |20|50|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"4 s\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Sb is replaced with Ge, as for increasing Ge exposure, the Ge percentage increases and the Sb percentage decreases. The Te percentage remains constant.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"three\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The method to show the cycle ratio can mean 1 to 3 but also 50 to 150, in both cases the composition will be different due to the probing depth of the measurement technique with which the composition is measured.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_36_fig9.jpg","caption":"Fig.9 $I_{DS} - V_{DS}$ characteristics of the conventional HEMT and the $\\mathrm{Ga_2O_3}$ MOS-HEMT upon varying the value of $V_{G}$ from $-6$ to $+2\\mathrm{V}$ at a step of $+1\\mathrm{V}$","id":"train/atomic-layer-deposition/experimental-usecase/36/fig9","sample_id":"atomic-layer-deposition/experimental-usecase/36/fig9","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/Huan-Yu Shih et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":611,"height":392,"image_format":"jpeg","image_sha256":"a9ea0f9e32da3be091e8c5fad45d866598310e53e569870b598350443bb4ef8c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":8,"width":609,"height":384}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the drain current (IDSS) versus drain-source voltage (VDS) for Ni/Au-HEMT and Ga2O3 MOS-HEMT devices.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| VDS (V) | Ni/Au-HEMT | Ga2O3 MOS-HEMT |\\n| --- | --- | --- |\\n| 0 | 0 | 0 |\\n| 5 | 800 | 1000 |\\n| 10 | 810 | 1010 |\\n| 15 | 805 | 1000 |\\n| 20 | 800 | 900 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Vg varies from -6 V to +2 V in steps of 1 V.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In both cases, the current increases to 5 V and then remains almost constant.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the figure, Ga2O3 MOS-HEMT sample reaches higher current values.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"I_DSS of 608 mA/mm for Ni/Au-HEMT and I_DSS of 720 mA/mm for Ga2O3 MOS-HEMT.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_36_fig_11.jpg","caption":"Fig. 11 a Gate leakage current and b three-terminal off-state breakdown characteristics of the conventional HEMT and the $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ MOS-HEMT","id":"train/atomic-layer-deposition/experimental-usecase/36/fig_11","sample_id":"atomic-layer-deposition/experimental-usecase/36/fig_11","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/Huan-Yu Shih et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":964,"height":427,"image_format":"jpeg","image_sha256":"555ed7cd0cf6e4f4dfbb6cfdc848e54605f047da36c47e120b7c4898d2e20e1f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":14,"y":25,"width":462,"height":400},{"panel_id":"b","x":498,"y":18,"width":466,"height":409}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The graph shows the gate-drain current (IGD) versus gate-source voltage (VGD) for Ni/Au-HEMT and Ga2O3 MOS-HEMT.\"},{\"panel_id\":\"b\",\"text\":\"The graph shows the drain-source current (IDS) versus drain-source voltage (VDS) for Ni/Au-HEMT and Ga2O3 MOS-HEMT. Voltage values of 126 V and 170 V are highlighted.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| VGD (V) | Ni/Au-HEMT | Ga2O3 MOS-HEMT |\\n| --- | --- | --- |\\n| -10 | 10^-3 | 10^-5 |\\n| -8 | 10^-3 | 10^-5 |\\n| -6 | 10^-3 | 10^-5 |\\n| -4 | 10^-3 | 10^-5 |\\n| -2 | 10^-4 | 10^-6 |\\n| 0 | 10^-6 | 10^-9 |\\n| 2 | 10^0 | 10^0 |\"},{\"panel_id\":\"b\",\"text\":\"| VGD (V) | Ni/Au-HEMT | Ga2O3 MOS-HEMT |\\n| --- | --- | --- |\\n| 0 | 0 | 0 |\\n| 30 | 0 | 0 |\\n| 60 | 0 | 0 |\\n| 90 | 0 | 0 |\\n| 120 | 0.15 | 0.01 |\\n| 150 | - | 0.05 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Subfigure a shows the gate-drain current versus voltage gate-drain for both samples.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For the Ni/Au-HEMT, the current remains constant but begins to increase after 90 V, with a significant increase at 126 V. Meanwhile, the Ga2O3 MOS-HEMT sample remains constant until approximately 150 V and then increases significantly at 170 V.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"170 V.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ALD Ga2O3 film can suppressed the gate leakage current density and increased the drain-state voltage.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_36_fig_8.jpg","caption":"Fig. 8 The capacitance-voltage (C-V) characteristics of the conventional HEMT and the $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ MOS-HEMT","id":"train/atomic-layer-deposition/experimental-usecase/36/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/36/fig_8","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/Huan-Yu Shih et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":620,"height":450,"image_format":"jpeg","image_sha256":"32787a11603f9a0bacb2f76fd403b8770692af3b33c2e00c2bd2067bdc2226cb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":617,"height":444}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the capacitance-voltage characteristics of the conventional HEMT and the Ga2O3 MOS-HEMT.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gate Voltage (V) | Ga2O3 MOS-HEMT | conventional HEMT |\\n|-----------------|-------|-------|\\n| -8 | 0 | 0 |\\n| -7 | 0 | 0 |\\n| -6 | 0 | 0 |\\n| -5 | 0 | 0 |\\n| -4 | 15 | 0 |\\n| -3 | 15 | 27 |\\n| -2 | 15 | 27 |\\n| -1 | 15 | 27 |\\n| 0 | 15 | 27 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The capacitance-voltage characteristics were measured at 1 MHz.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For both the Ga2O3 MOS-HEMT and the conventional HEMT, the capacitance increases until it reaches plateaus of 15 and 7, respectively.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The capacitance value is o when the gate voltage varies from -8 to -4 V.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Ga2O3 HEMT allows for the lowest possible capacitance values.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_40_fig_7.jpg","caption":"FIG. 7. Change of sheet resistance on $\\mathrm{Cu / PEALD}$ TiN $10 \\mathrm{nm} / \\mathrm{Si}$ and $\\mathrm{Cu / PEALD}$ Ti-Si-N $10 \\mathrm{nm} / \\mathrm{Si}$ as a function of annealing temperature.","id":"train/atomic-layer-deposition/experimental-usecase/40/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/40/fig_7","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":506,"height":400,"image_format":"jpeg","image_sha256":"5b52f5e9ac3fff195ed759c54063a29c615a481d668c6178c7b0925c8a9c77c7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":2,"width":498,"height":396}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multiple line chart showing sheet resistance evolution of Cu/PEALD TiN and Cu/PEALD Ti–Si–N (10 nm) films on Si as a function of annealing temperature. TiN remains conductive up to ~550 °C but exhibits a sharp resistance increase at 600 °C, indicating thermal degradation. In contrast, Ti–Si–N maintains near-zero resistance up to 600 °C and shows a delayed, gradual increase at higher temperatures, demonstrating enhanced thermal stability due to silicon incorporation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Annealing temperature (°C) | Sheet resistance: TiN | Sheet resistance: Ti–Si–N @ Ar |\\n|----------------------------|-----------------------------|--------------------------------------|\\n| 450 | ~0 | ~0 |\\n| 500 | ~0 | ~0 |\\n| 550 | ~5 | ~0 |\\n| 600 | ~62 | ~0 |\\n| 650 | – | ~7 |\\n| 700 | – | ~30 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Nitrogen out-diffusion from TiN\\n, -Grain growth and grain boundary formation\\n, -Copper diffusion into the barrier layer\\n, -Loss of film continuity during annealing\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TiN shows a sudden and dramatic rise in sheet resistance at 600 °C, indicating rapid loss of electrical continuity. In contrast, Ti–Si–N maintains low resistance through 600 °C and degrades only gradually at higher temperatures, reflecting superior thermal robustness.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Silicon incorporation disrupts long-range crystallinity and suppresses grain boundary formation, which are common diffusion pathways. This structural modification stabilizes the film against high-temperature degradation, delaying resistance increase compared to pure TiN.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Because Ti–Si–N maintains low sheet resistance at higher annealing temperatures, indicating improved thermal and diffusion-barrier stability.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_41_fig_1.jpg","caption":"FIG. 1. Effective lifetime as a function of the excess carrier density for low resistivity $p$ -type $(300\\mu \\mathrm{m}$ , $(111)$ , $2.0\\Omega \\mathrm{cm}$ float zone $c$ -Si substrate passivated with 30 and $15\\mathrm{nm}$ thick $\\mathrm{Al}_2\\mathrm{O}_3$ films.","id":"train/atomic-layer-deposition/experimental-usecase/41/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/41/fig_1","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/Hoex et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":539,"height":414,"image_format":"jpeg","image_sha256":"26b5af2e6f1c0da0701cc917e24f476767e25dda7919bca670465e674dfc4e71","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":538,"height":411}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between injection level and effective lifetime for two different thickness passivation layers (30 nm and 15 nm). The data points are clustered around a curve, indicating a non-linear relationship.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Injection level Δn (cm⁻³) | Effective lifetime (s), 30 nm|Effective lifetime (s), 15 nm|\\n|---|---|---|\\n| 10¹² | 2*10⁻⁴ |-|\\n| 10¹³ | 4*10⁻⁴ |10⁻³|\\n| 10¹⁴ | 6*10⁻⁴ |10⁻³ |\\n| 10¹⁵ | 9*10⁻⁴ |10⁻³ |\\n| 10¹⁶ | 10⁻³ |10⁻³ |\\n| 10¹⁷ | 10⁻⁴ |10⁻⁴ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 15 nm thick layer, this thickness seems to have the best effect over a broader range of injection level.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.001 s.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Scattered data does not show a straight line. In addition, both axes are logarithmic.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.0001 s\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_41_fig_2.jpg","caption":"FIG. 2. Effective lifetime as a function of the excess carrier density for low resistivity $n$ -type $(275\\mu \\mathrm{m}$ , $(100)$ , $1.9\\Omega \\mathrm{cm}$ float zone $c$ -Si substrate passivated with 30, 15, and $7\\mathrm{nm}$ thick $\\mathrm{Al}_2\\mathrm{O}_3$ films.","id":"train/atomic-layer-deposition/experimental-usecase/41/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/41/fig_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/Hoex et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":544,"height":433,"image_format":"jpeg","image_sha256":"6ed5a138a6cd736d10b12caa848929906f83974e8f96c58bd84e1f3870f82fda","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":540,"height":426}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the effective lifetime of a system as a function of injection level Δn, with data points represented by different symbols corresponding to different thickness passivation layers (26, 13, and 7 nm).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Injection level Δn (cm⁻³) | Effective lifetime (s), 26 nm|Effective lifetime (s), 13 nm|Effective lifetime (s), 7 nm|\\n|---|---|---|---|\\n| 10¹² | 10⁻³ |-|-|\\n| 10¹³ | 2*10⁻³ |10⁻³|10⁻³|\\n| 10¹⁴ | 5*10⁻³ |2*10⁻³ |2*10⁻³ |\\n| 10¹⁵ | 7*10⁻³ |3*10⁻³ |3*10⁻³ |\\n| 10¹⁶ | 10⁻³ |8*10⁻⁴ |8*10⁻⁴|\\n| 10¹⁷ | - |-|10⁻⁴ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The difference between the 7 and 13 nm thick passivating layers is negligable, whereas the 26 nm layer does show an increase in passivation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The overal trends look similar, important is that the maximum effective lifetime seems to shift to higher injection levels with thicker passivation layers.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.008 s with a passivation layer of 26 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10^15 per cubic centimeter.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_50_fig4.jpg","caption":"Fig.4 Resistivity. $\\rho$ a),carrier concentration, $n$ b),mobility, $\\mu$ c and doping efficiency $\\eta$ (d) of the ZnO:X $\\mathbb{X} = \\mathbb{A}\\mathbb{I}$ B) films as a function of the doping fraction (DF) measured by XPS. TIB was used as a B source while DMAI and TMA were used as A sources. All films had a thickness of $45\\pm$ $5\\mathrm{nm}$ and were deposited on glass substrates at $150^{\\circ}C$ The lines serve as guides to the eye. The error bars for $\\rho$ are plotted in the graph (some of them lying within the data points) and the estimated relative statistical uncertainties for n, $\\mu$ and $\\eta$ are $3\\%$ $5\\%$ and $20\\%$ respectively.","id":"train/atomic-layer-deposition/experimental-usecase/50/fig4","sample_id":"atomic-layer-deposition/experimental-usecase/50/fig4","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multiple scatter plot"},{"panel_id":"d","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/Garcia-Alonso et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":581,"height":1370,"image_format":"jpeg","image_sha256":"a724d3409c392cec0b7d8bf5b4c4734ca01c0651d6f41521e5cf15c27aa00496","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":579,"height":317},{"panel_id":"b","x":0,"y":319,"width":577,"height":341},{"panel_id":"c","x":4,"y":662,"width":574,"height":320},{"panel_id":"d","x":4,"y":991,"width":576,"height":370}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The resistivity of TIB, DMAI, and TMA decreases as the doping fraction increases and then slightly increases\"},{\"panel_id\":\"b\",\"text\":\"The carrier concentration of TIB, DMAI, and TMA initially increases and then decreases as the doping fraction increases.\"},{\"panel_id\":\"c\",\"text\":\"The Mobility also increases initially and then decreases\"},{\"panel_id\":\"d\",\"text\":\"Doping efficiency increases at the beginning and then decreases, but for TMA it remains constant.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Doping fraction, DF | TIB (mΩ·cm) | DMAI (mΩ·cm) | TMA (mΩ·cm) |\\n|---|---|---|---|\\n| 0.00 | 0 | 0 | 70 |\\n| 0.020 | 6 | 10 | 20 |\\n| 0.040 | 8 | 8 | 15 |\\n| 0.060 | 10 | 10 | 12 |\\n| 0.080 | 28 | 18 | - |\\n| 0.100 | - | 25 | 22 |\"},{\"panel_id\":\"b\",\"text\":\"| Doping fraction, DF | TIB (10^20 cm^-3) | DMAI (10^20 cm^-3) | TMA (10^20 cm^-3) |\\n|---|---|---|---|\\n| 0.00 | 0.0 | 0.0 | 0.0 |\\n| 0.01 | 1 | 1 | - |\\n| 0.02 | 1.5 | 1.5 | - |\\n| 0.03 |3.0 | 2.5 | 0.5 |\\n| 0.04 | - | 2.5 | 1.0 |\\n| 0.05 | 2.75 | - | - |\\n| 0.06 | 2.0 | 2.2 | 1.5 |\\n| 0.08 | 1.5 | - | - |\\n| 0.09 | 1.0 | 2.2 | - |\\n| 0.10 |- 000 | 2.2 | 1.5 |\"},{\"panel_id\":\"c\",\"text\":\"| Doping fraction, DF | TIB (cm²/V·s^-1) | DMAI (cm²/V·s^-1) | TMA (cm²/V·s^-1) |\\n|---|---|---|---|\\n| 0.00 | 7.0 | 7.0 | 7.0 |\\n| 0.01 | 8.0 | 8.0 | 8.0 |\\n| 0.02 | 9.0 | 9.0 | 9.0 |\\n| 0.03 | 10.0 | 10.0 | 10.0 |\\n| 0.04 | 11.0 | 11.0 | 11.0 |\\n| 0.05 | 12.0 | 12.0 | 12.0 |\\n| 0.06 | 10.0 | 10.0 | 10.0 |\\n| 0.07 | 8.0 | 8.0 | 8.0 |\\n| 0.08 | 6.0 | 6.0 | 6.0 |\\n| 0.09 | 4.0 | 4.0 | 4.0 |\\n| 0.10 | 2.0 | 2.0 | 2.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The addition of a small amount of B sharply reduced the resistivity of the films to a minimum of ~3.5 mOhm cm for a doping fraction (DF) of 0.016. The addition of Al also reduced the resistivity of the films to a minimum in both cases. Doping with DMAI resulted in ZnO:Al films with the same minimum resistivity than ZnO:B films at the same DF of 0.016, while doping with TMA resulted in ZnO:Al films with a higher minimum resistivity of 8 mO cm for a higher DF of 0.040. The resistivity of ZnO:Al films increased in both cases after achieving the minimum resistivity value, but this increase was more gradual than observed for the ZnO:B films.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The overall lower mobility values obtained for the three doping materials and the trend of mobility decreasing with increasing doping fraction over the full range studied can most likely be attributed to grain boundary scattering. Furthermore, it is rather striking that m increases when going\\nfrom undoped ZnO to low B-doping concentrations, as one would expect more ionized impurity scattering. Yet a similar trend in mobility was observed for ZnO:B films prepared by the\\nsol–gel technique.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TIB and DMAI, showed the highest doping efficiency at low doping levels, i.e., 30–40% for a range of DF of 0.016–0.018 that resulted in the lowest resistivities for the ZnO:B and ZnO:Al (doped with DMAI) films. Both alternative precursors outperformed TMA in terms of doping efficiency, as a maximum doping efficiency of 6% was achieved using this conventional precursor.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increase of the carrier concentration for low doping fractions in the three cases can be assigned to the effective doping of B and Al, respectively (i.e., substitution of Zn2+ by B3+ or Al3+). The sharp decrease of the carrier concentration for TIB and the local saturation for DMAI and TMA might occur as a result of dopant occupying interstitial sites, dopant clustering, formation of oxides, or formation of metastable phases, making dopant inactive, which is possibly related to reaching the solubility limit of the B and Al into the ZnO lattice.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_64_fig_5.jpg","caption":"FIG. 5. Growth rate of the ruthenium films grown from $\\mathrm{RuCp}_2$ on iridium as a function of the deposition temperature, the film thicknesses being measured by EDX and XRR. The $\\mathrm{RuCp}_2$ and oxygen pulse times were 0.5 and $0.2\\mathrm{s}$ , respectively, and the purge period between the pulses was $0.5\\mathrm{s}$ .","id":"train/atomic-layer-deposition/experimental-usecase/64/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/64/fig_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"64","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":528,"height":359,"image_format":"jpeg","image_sha256":"ad14f55fb71e6d291daa4ef9c93dba4dfe7ce9607c3de5c9bd65d3c5be1840d0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":528,"height":359}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the growth rate of ruthenium films deposited from RuCp2 on an iridium substrate as a function of deposition temperature. Film thicknesses were measured by EDX and XRR, and the growth rate increases with temperature, ranging from about 0.12 Å/cycle at 225 °C to 0.35 Å/cycle at 275 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition temperature (°C) | Growth rate (Å cycle⁻¹) |\\n|---|---|\\n| 225 | 0.12 |\\n| 230 | 0.15 |\\n| 250 | 0.25 |\\n| 275 | 0.35 |\\n| 280 | 0.33 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the deposition temperature generally improves the growth rate and can enhance film uniformity by promoting consistent precursor adsorption and reaction across the surface. However, excessively high temperatures might risk precursor decomposition or unwanted side reactions, so optimization is required to balance growth rate and film quality.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the growth rate on iridium is higher than on Al2O3 at similar deposition temperatures. For example, at 275 °C, the growth rate on iridium is 0.35 Å/cycle, while on Al2O3 it is 0.23 Å/cycle.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the deposition temperature increases from 225 °C to 275 °C, the growth rate of ruthenium films increases almost linearly. At lower temperatures, the growth rate is slower (around 0.12 Å/cycle) and reaches approximately 0.35 Å/cycle at higher temperatures. This indicates that higher temperatures enhance the reactivity of the RuCp2 precursor and improve film deposition efficiency.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Iridium provides a higher nucleation density, promoting faster film growth, Al₂O₃ shows a longer incubation period at the beginning, reducing the overall growth rate, Substrate type influences the minimum temperature required for film growth due to precursor reactivity differences\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_66_figure_8.jpg","caption":"Figure 8. $P - V$ hysteresis loops for (a) Fe-; (b) Co-; and (c) Ni-doped $\\mathrm{ZnO}$ films.","id":"train/atomic-layer-deposition/experimental-usecase/66/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/66/figure_8","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/Paskaleva et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"66","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":1125,"height":317,"image_format":"jpeg","image_sha256":"9af67368603bedf2f92010824937427ea3b105b1936f11492060c30907c3efa3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":379,"height":316},{"panel_id":"b","x":380,"y":4,"width":377,"height":311},{"panel_id":"c","x":759,"y":6,"width":363,"height":309}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the polarization (P) as a function of applied voltage (V) for ZnO:Fe\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the polarization (P) as a function of applied voltage (V) for ZnO:Co\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the polarization (P) as a function of applied voltage (V) for ZnO:Ni\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Applied Voltage (V) | P (μC/cm²) at 1.5 kHz | P (μC/cm²) at 3 kHz | P (μC/cm²) at 5 kHz |\\n|---|---|---|---|\\n| -3.0 | -40 | -38 | -36 |\\n| -2.0 | -30 | -28 | -26 |\\n| -1.0 | -15 | -14 | -13 |\\n| 0.0 | 0 | 0 | 0 |\\n| 1.0 | 15 | 14 | 13 |\\n| 2.0 | 30 | 28 | 26 |\"},{\"panel_id\":\"b\",\"text\":\"| Applied Voltage (V) | P (μC/cm²) |\\n|---|---|\\n| -3.0 | -40 |\\n| -2.0 | -30|\\n| -2.0 | -30 |\\n| -1.0 | -15 |\\n| 0.0 | 0 |\\n| 1.0 | 15 |\\n| 2.0 | 30 |\"},{\"panel_id\":\"c\",\"text\":\"| Applied Voltage (V) | P (μC/cm²) |\\n|---|---|\\n| -3.0 | -40 |\\n| -2.0 | -30 |\\n| -1.0 | -15 |\\n| 0.0 | 0 |\\n| 1.0 | 15 |\\n| 2.0 | 30 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ferroelectric P−V hysteresis loops for TM doped ZnO films are measured using a Sawyer−Tower circuit\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Fe-doped layers (Figure 8a) reveal a ferroelectric like behavior with a well-resolved P−V loop and the polarization increasing with the decreasing frequency\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The results for Ni- and Co-doped layers, though showing some P− V hysteresis, are not that convincing for the existence of ferroelectricity\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_69_FIG10_a.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/69/FIG10_a","sample_id":"atomic-layer-deposition/experimental-usecase/69/FIG10_a","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG10_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG10_a.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/Ruben Blomme et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"69","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"not_found"},"width":664,"height":491,"image_format":"jpeg","image_sha256":"40c99107efd48e5720d438ce900eb5c418e6a4d439a1521576c4d47f2d8105d5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":4,"width":659,"height":483}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_7_95837a0f09f651369047f60c135b85eaee479b486b3df8a1df6a96de654e6120.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/7/95837a0f09f651369047f60c135b85eaee479b486b3df8a1df6a96de654e6120","sample_id":"atomic-layer-deposition/experimental-usecase/7/95837a0f09f651369047f60c135b85eaee479b486b3df8a1df6a96de654e6120","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/95837a0f09f651369047f60c135b85eaee479b486b3df8a1df6a96de654e6120.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/95837a0f09f651369047f60c135b85eaee479b486b3df8a1df6a96de654e6120.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/Aarik et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"not_found"},"width":472,"height":1139,"image_format":"jpeg","image_sha256":"501a721d35369db0fbed069278c6718ac94a8588ca1d4d07d992f80860bf5796","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":581,"width":470,"height":556},{"panel_id":"a","x":4,"y":1,"width":467,"height":554}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Δm₁ (open markers) is consistently higher than Δm₀ (filled markers) across 100–400 °C for all three cycle-time sequences. Δm₁ peaks around ~250–300 °C (depending on marker set) and then trends downward toward 400 °C, while Δm₀ stays comparatively flat through ~350 °C. The 5–2–2–5 s condition shows a notable Δm₀ increase at ~400 °C relative to the other sequences. Overall, varying the first-step pulse time mainly impacts Δm₁ magnitude and its temperature dependence, more than Δm₀.\"},{\"panel_id\":\"b\",\"text\":\"Two cycle-time sequences are compared, and the separation between Δm₁ (open) and Δm₀ (filled) is maintained across the full temperature range. Δm₁ rises toward a maximum near ~300 °C and then decreases at higher temperature, whereas Δm₀ remains near ~35–40 with only modest changes. Differences between the two purge-time conditions are clearer in Δm₁ than in Δm₀. The data suggest temperature sensitivity is concentrated in the Δm₁ response rather than the baseline Δm₀ increment.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Growth temperature (°C) | Δm1 (0.5-2-2-5 s, open ○) | Δm1 (2-2-2-5 s, open □) | Δm1 (5-2-2-5 s, open △) | Δm0 (0.5-2-2-5 s, filled ●) | Δm0 (2-2-2-5 s, filled ■) | Δm0 (5-2-2-5 s, filled ▲) |\\n|---|---:|---:|---:|---:|---:|---:|\\n| 100 | ~86 | ~92 | ~88 | ~44 | ~45 | ~47 |\\n| 150 | ~75 | ~84 | ~85 | ~35 | ~39 | ~40 |\\n| 200 | ~88 | ~90 | ~95 | ~33 | ~37 | ~37 |\\n| 250 | ~88 | ~105 | ~102 | ~36 | ~37 | ~37 |\\n| 300 | ~101 | ~100 | ~112 | ~37 | ~38 | ~44 |\\n| 350 | ~96 | ~101 | ~100 | ~38 | ~39 | ~39 |\\n| 400 | ~90 | ~85 | ~98 | ~45 | ~45 | ~64 |\"},{\"panel_id\":\"b\",\"text\":\"| Growth temperature (°C) | Δm1 (2-2-0.5-5 s, open ○) | Δm1 (2-2-5-5 s, open □) | Δm0 (2-2-0.5-5 s, filled ●) | Δm0 (2-2-5-5 s, filled ■) |\\n|---|---:|---:|---:|---:|\\n| 100 | ~80 | ~99 | ~41 | ~52 |\\n| 150 | ~75 | ~90 | ~36 | ~39 |\\n| 200 | ~87 | ~98 | ~34 | ~38 |\\n| 250 | ~89 | ~101 | ~35 | ~37 |\\n| 300 | ~104 | ~110 | ~36 | ~37 |\\n| 350 | ~98 | ~99 | ~38 | ~35 |\\n| 400 | ~83 | ~87 | ~40 | ~40 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The third step (purge time) was varied between 0.5 s and 5 s.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. 0.5 - 2 - 2 - 5 s\\n, 2. 2 - 2 - 2 - 5 s\\n, 3. 5 - 2 - 2 - 5 s\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It varies only weakly, staying clustered near ~35–45 arbitrary units across most of 100–350 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Δm₁ is systematically larger than Δm₀ across the entire temperature range, typically ~80–110 versus ~30–45 in arbitrary units. Δm₁ also shows a clearer temperature response, with a broad maximum around ~250–300 °C before decreasing at higher temperature. By contrast, Δm₀ is comparatively flat through ~350 °C, with only small offsets between marker sets. The main temperature sensitivity therefore sits in Δm₁ rather than Δm₀.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_7_fig2.jpg","caption":"Fig.2. $\\Delta m_0$ and $\\Delta m_1$ as functions of growth temperature. Buffer layers were deposited at 100 and $300^{\\circ}\\mathrm{C}$ . The $\\mathrm{TiCl_4}$ pulse time, first purge time, $\\mathrm{H}_2\\mathrm{O}$ pulse time, and second purge time were 2, 2, 2, and $5\\mathrm{s}$ , respectively.","id":"train/atomic-layer-deposition/experimental-usecase/7/fig2","sample_id":"atomic-layer-deposition/experimental-usecase/7/fig2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/Aarik et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":461,"height":553,"image_format":"jpeg","image_sha256":"9f2d1979ee9d5f9d98c358cf3ad1817ecc2df349f6e11f4b8162d6ee0e5dcf0a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":458,"height":547}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Scatter plot comparing mass increments Δm₀ and Δm₁ vs. growth temperature for films grown on buffer layers deposited at 100 °C (circles) and 300 °C (squares). It shows that the 300 °C buffer layer generally results in higher or increasing Δm₁ values, particularly above 200 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Growth Temp (°C) | Buffer 100°C: Δm0 (●) | Buffer 100°C: Δm1 (○) | Buffer 300°C: Δm0 (■) | Buffer 300°C: Δm1 (□) |\\n|---|---|---|---|---|\\n| 100 | ~50 | ~95 | ~45 | ~92 |\\n| 150 | ~35 | ~75 | ~40 | ~85 |\\n| 200 | ~30 | ~68 | ~38 | ~92 |\\n| 250 | ~25 | ~60 | ~38 | ~105 |\\n| 350 | ~28 | ~62 | ~40 | ~100 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. 2 s (TiCl₄)\\n, 2. 2 s (First purge)\\n, 3. 2 s (H₂O pulse)\\n, 4. 5 s (Second purge)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the open symbols are consistently plotted higher on the y-axis than the corresponding filled symbols.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The buffer layer deposited at 300 °C (open squares) generally results in significantly higher Δm₁ values compared to the buffer deposited at 100 °C (open circles). This difference is most notable at higher growth temperatures (above 200 °C), where the 300 °C buffer sample shows an increasing trend, reaching values over 100 units, while the 100 °C buffer sample decreases to around 60 units.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The temperature at which the buffer layer was grown (300 °C for squares vs 100 °C for circles).\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_7_fig6.jpg","caption":"Fig.6. $\\Delta m_0$ , $\\Delta m_1$ and $\\Delta m_1 - \\Delta m_2^{\\prime}$ recorded at $350^{\\circ}\\mathrm{C}$ as functions of $\\mathrm{TiCl_4}$ pulse time. The first purge time, $\\mathrm{H}_2\\mathrm{O}$ pulse time, and second purge time were 10, 2 and $5\\mathrm{s}$ , respectively.","id":"train/atomic-layer-deposition/experimental-usecase/7/fig6","sample_id":"atomic-layer-deposition/experimental-usecase/7/fig6","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/Aarik et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":467,"height":447,"image_format":"jpeg","image_sha256":"3e5994ac832b2a5b794cb6b10e666cb760e9ec8a75afde12b2709073ec50d748","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":4,"width":464,"height":441}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows Δm₀, Δm₁, and Δm₁ − Δm₂′ as functions of TiCl₄ pulse time at 350 °C. Δm₁ and Δm₁ − Δm₂′ increase rapidly at short pulse times and saturate beyond ~2 s, consistent with self-limiting surface adsorption. In contrast, Δm₀ continues to increase with pulse time, indicating an additional non-saturating mass-gain contribution. The divergence between Δm₁ saturation and Δm₀ growth suggests the onset of parasitic or CVD-like processes at longer TiCl₄ exposures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TiCl4 Pulse Time (s) | Δm1 (Triangles) | Δm1 - Δm2' (Squares) | Δm0 (Circles) |\\n|---|---|---|---|\\n| 0.5 | ~82 | ~69 | ~37 |\\n| 1.0 | ~84 | ~73 | ~40 |\\n| 2.0 | ~88 | ~74 | ~41 |\\n| 5.0 | ~88 | ~75 | ~43 |\\n| 10.0 | ~88 | ~80 | ~50 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"350 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes—closer to Δm₁.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Δm₁ rises rapidly at short pulse times and then plateaus, indicating saturation of surface-limited reactions. Δm₀, however, continues to increase with pulse time, suggesting an additional mass-gain mechanism that does not self-limit. This contrast implies that extended precursor exposure contributes to non-ideal growth behavior.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Since Δm₁ saturates by ~2 s, longer TiCl₄ pulses do not improve self-limiting growth but instead promote parasitic mass gain. Optimizing pulse time near the saturation threshold minimizes cycle time while avoiding unwanted CVD-like contributions.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_7_fig8.jpg","caption":"Fig.8. $\\Delta m_0 / (\\Delta m_1 - \\Delta m_2')$ as a function of growth temperature determined at different $\\mathrm{TiCl_4}$ pulse times. Buffer layers were grown at temperatures of 100 and $300^{\\circ}\\mathrm{C}$ . Notation of cycle times is the same as in Fig. 3.","id":"train/atomic-layer-deposition/experimental-usecase/7/fig8","sample_id":"atomic-layer-deposition/experimental-usecase/7/fig8","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/Aarik et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":464,"height":480,"image_format":"jpeg","image_sha256":"3e41555eb1be74ee3ef2faa94de88e5240d8663b7993054cc0f37807fe567fda","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":5,"width":459,"height":473}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Scatter plot showing the ratio Δm₀/(Δm₁−Δm₂) as a function of growth temperature (~100–400 °C) for three different cycle sequences where the first pulse time varies (0.5 s, 2 s, 5 s). The ratio generally decreases with temperature up to ~250–300 °C for the longer pulse-time conditions before increasing again at higher temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Growth Temp (°C) | 5s Pulse (Squares) | 0.5s Pulse (Open Circ) | 2s Pulse (Filled Circ) | 2s Pulse (Triangles, TB=100) |\\n|---|---|---|---|---|\\n| 100 | ~0.56 | ~0.52 | ~0.50 | - |\\n| 150 | ~0.50 | ~0.50 | ~0.50 | ~0.53 |\\n| 200 | ~0.41 | ~0.40 | ~0.42 | ~0.48 |\\n| 250 | ~0.39 | ~0.41 | ~0.39 | ~0.46 |\\n| 300 | ~0.44 | ~0.40 | ~0.43 | - |\\n| 350 | ~0.45 | ~0.44 | ~0.45 | ~0.47 |\\n| 400 | ~0.75 | ~0.58 | ~0.65 | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Δm₀/(Δm₁−Δm₂)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the ratio increases significantly from approximately 0.44 to 0.75 in that temperature range.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mass ratio for the 5 s pulse time sample starts at approximately 0.56 at 100 °C and decreases steadily as the temperature rises, reaching a minimum value around 250 °C. After this point, the trend reverses. Above 300 °C, the ratio increases sharply, reaching its maximum value of ~0.75 at 400 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"100 °C and 300 °C.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_7_fig_3.jpg","caption":"Fig. 3. $\\Delta m_0$ and $\\Delta m_1$ as functions of substrate temperature measured at (a) different $\\mathrm{TiCl_4}$ pulse times and (b) different $\\mathrm{H}_2\\mathrm{O}$ pulse times. Buffer layer was grown at $300^{\\circ}\\mathrm{C}$ . Cycle times shown in the inset denote the $\\mathrm{TiCl_4}$ pulse time, first purge time, $\\mathrm{H}_2\\mathrm{O}$ pulse time, and second purge time, respectively. Fig. 5. $\\Delta m_0$ as a function of (a) the first purge time and (b) the second purge time. Notation of cycle times is the same as in Fig. 3. Buffer layer was deposited at $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/7/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/7/fig_3","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/Aarik et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":475,"height":677,"image_format":"jpeg","image_sha256":"1872bdd68afa790590f4f4ddf2f8fc5755072f9980c346050048fd9f0e6211a5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":1,"y":347,"width":471,"height":326},{"panel_id":"a","x":1,"y":4,"width":471,"height":323}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Δm₀ decreases sharply with increasing first purge time up to ~1–2 s and then plateaus for both growth temperatures. At all purge times, Δm₀ remains higher at 150 °C than at 350 °C.\"},{\"panel_id\":\"b\",\"text\":\"A similar behavior is observed when varying the second purge time, with Δm₀ dropping rapidly at short purge times and stabilizing beyond ~2 s. The persistence of a temperature offset indicates that growth temperature influences the net mass increment even after sufficient purging.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| First purge time x (s) | Δm₀ at 150 °C (circles) | Δm₀ at 350 °C (squares) |\\n|---|---|---|\\n| 0.1 | ~56 | ~41 |\\n| 0.5 | ~44 | ~35 |\\n| 1.0 | ~41 | ~36 |\\n| 2.0 | ~41 | ~34 |\\n| 5.0 | ~39 | ~30 |\\n| 10.0 | ~40 | ~30 |\"},{\"panel_id\":\"b\",\"text\":\"| Second purge time x (s) | Δm₀ at 150 °C (circles) | Δm₀ at 350 °C (squares) |\\n|---|---|---|\\n| 0.1 | ~54 | ~43 |\\n| 0.5 | ~45 | ~38 |\\n| 1.0 | ~45 | ~34 |\\n| 2.0 | ~42 | ~34 |\\n| 5.0 | ~40 | ~35 |\\n| 10.0 | ~40 | ~35 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The similar purge-time dependence indicates that both purge steps play comparable roles in removing residual species. Once a critical purge duration is reached, surface reactions become self-limiting regardless of purge order.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first purge step following the TiCl₄ pulse.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_7_fig_4.jpg","caption":"Fig. 4. $\\Delta m_2^{\\prime}$ as a function of growth temperature recorded at different $\\mathrm{TiCl_4}$ pulse times. Buffer layers were deposited at $T_{\\mathrm{B}} = 100$ and $300^{\\circ}\\mathrm{C}$ . Notation of cycle times is the same as in Fig. 3.","id":"train/atomic-layer-deposition/experimental-usecase/7/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/7/fig_4","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/Aarik et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":461,"height":391,"image_format":"jpeg","image_sha256":"59835e988ca650bbf7851e901b18be91b4bf897664e52dce14efa0bb28984a26","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":459,"height":391}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows Δm₂′ as a function of growth temperature (≈100–400 °C) for different TiCl₄ pulse-time sequences, with buffer layers grown at TB = 100 °C and TB = 300 °C. Δm₂′ increases with temperature for all conditions, with a pronounced rise at ≳300 °C. At lower growth temperatures (≈100–250 °C), samples with TB = 100 °C consistently exhibit lower Δm₂′ values than those with TB = 300 °C. At higher temperatures, Δm₂′ converges to larger values across pulse times, indicating reduced sensitivity to buffer-layer temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Growth Temp (°C) | 5 s pulse (■) | 2 s pulse (●, TB = 300 °C) | 0.5 s pulse (○) | 2 s pulse (▲, TB = 100 °C) |\\n|---|---|---|---|---|\\n| 100 | ~4.0 | ~3.0 | — | ~2.0 |\\n| 150 | ~3.0 | ~5.0 | — | ~4.0 |\\n| 200 | ~6.0 | ~7.0 | ~6.5 | ~4.5 |\\n| 250 | ~7.0 | ~9.0 | — | ~5.0 |\\n| 300 | ~13.0 | ~13.0 | ~11.0 | — |\\n| 350 | ~13.0 | ~13.0 | ~11.0 | ~10.0 |\\n| 400 | ~13.0 | ~15.0 | ~12.0 | — |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Δm₂ (arbitrary units).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, Δm₂ generally increases with increasing growth temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At lower growth temperatures (≈100–250 °C), the TB = 100 °C triangle series sits below the TB = 300 °C circle/square series, meaning Δm2′ is smaller when the buffer is grown at 100 °C. For example, near 200 °C the triangle point is around ~4–5, while TB=300 °C points cluster closer to ~6–7. At higher temperatures (≥300 °C), Δm2′ rises for all conditions and the separation becomes less consistent, with the largest values appearing near 400 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. 0.5 - 2 - 2 - 5 s\\n, 2. 2 - 2 - 2 - 5 s\\n, 3. 5 - 2 - 2 - 5 s\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_10_figure_4.jpg","caption":"Figure 4. Film thickness measured by in situ SE as a function of the $\\mathrm{In}_2\\mathrm{O}_3\\cdot \\mathrm{H}$ ALD cycles on $\\mathrm{SiO}_2$ open triangles) and on a-Si:H (open circles). Ex situ SE measurements were taken only for 600 and 780 ALD cycles on a-Si:H. Above 600 ALD cycles the selectivity of the process appears to degrade.","id":"train/atomic-layer-deposition/simulation-usecase/10/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/10/figure_4","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":525,"height":389,"image_format":"jpeg","image_sha256":"8ec2c668760cfc60c12ec924c25d269245c6f1f2f46bdb724e75405942fa248f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":1,"width":520,"height":387}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between ALD cycles and the thickness of In_{2}O_{3}:H, with SiO_{2} and a-Si:H marked by different symbols\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycles | SiO₂ (nm) | a-Si:H (nm) |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 50 | 0 | 0 |\\n| 100 | 2 | 0 |\\n| 150 | 7 | 0 |\\n| 200 | 12 | 0 |\\n| 250 | 17 | 0 |\\n| 300 | 22 | 0 |\\n| 350 | 27 | 0 |\\n| 400 | 32 | 0 |\\n| 450 | 38 | 0 |\\n| 500 | 43 | 0 |\\n| 550 | 48 | 0 |\\n| 600 | 53 | 0 |\\n| 650 | 58 | 0 |\\n| 700 | 63 | 0 |\\n| 750 | 68 | 0 |\\n| 800 | 75 | 10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"x-axis: ALD cycles\\n\\n, y-axis: In₂O₃:H thickness (nm)\\n\\n, Triangles: SiO₂ substrate\\n\\n, Circles: a-Si:H substrate\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"On SiO₂, the film thickness increases steadily with cycle number after a small initial delay, indicating normal nucleation and a roughly constant growth per cycle. On a-Si:H, the thickness stays close to zero across most of the cycle range, indicating a long nucleation delay. Only at very high cycle count does measurable growth begin to appear on a-Si:H.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"SiO₂ typically presents oxygen-containing / hydroxylated sites that can readily react with many ALD precursors, enabling fast nucleation. In contrast, a-Si:H is H-terminated and comparatively less reactive toward oxide ALD chemistry until it is modified (e.g., oxidized or activated). The plot is consistent with that difference: rapid nucleation on SiO₂ and strongly delayed nucleation on a-Si:H.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Area-selective ALD relies on having one surface where growth proceeds and another where growth is delayed or suppressed over the desired number of cycles. The strong inhibition on a-Si:H relative to SiO₂ provides that selectivity window. This enables pattern formation by locally converting only selected regions into the “fast nucleation” surface while keeping the rest in the “slow nucleation” state.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_12.jpg","caption":"FIG. 12. (a) Average wafer coverage and (b) $3\\sigma$ wafer thickness variability for an ideal and a soft-saturating ALD process. Simulation conditions are the same as for Fig. 10(c).","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_12","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_12","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":700,"height":853,"image_format":"jpeg","image_sha256":"d4979ee43c00b05e84ef645decb53d84b07fb2160704abbc68d74140ac98e7d8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":14,"y":27,"width":657,"height":394},{"panel_id":"b","x":32,"y":452,"width":639,"height":397}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the average coverage over time for two conditions: 'Ideal' and 'f2 = 0.1'. The 'Ideal' condition reaches a plateau at approximately 0.9, while 'f2 = 0.1' reaches a plateau slightly below.\"},{\"panel_id\":\"b\",\"text\":\"The line chart illustrates the 3σ variability percentage over time for two conditions: 'Ideal' and 'f2 = 0.1'. Both conditions show a decreasing trend, with 'Ideal' reaching near-zero variability around 1.0 seconds and 'f2 = 0.1' stabilizing around 1.5%.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time, s | Average coverage f_2 = 0.1 | Average coverage Ideal |\\n|---|---|---|\\n| 0.0 | 0.0 | 0.0 |\\n| 0.5 | 0.7 | 0.75 |\\n| 1.0 | 0.9 | 1.0 |\\n| 1.5 | 0.9 | 1.0 |\\n| 2.0 | 0.9 | 1.0 |\\n| 2.5 | 0.9 | 1.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Time, s | 3σ variability (%) f_2 = 0.1 | 3σ variability (%) Ideal |\\n|---|---|---|\\n| 1.0 | 3.0 | 0 |\\n| 1.5 | 2.0 | 0 |\\n| 2.0 | 1.5 | 0 |\\n| 2.5 | 1.5 | 0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is 0% for the ideal case and about 1.5% for f_2 = 0.1.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Near 0 s, the reaction is not saturated and the surface thickness is highly dependent on dose time, which also means the surface thickness varies a lot in this region. When the surface starts to become saturated, the surface thickness no longer depends on the dose time (ideal case) and only very little for the non-ideal case. In this last case, the surface thickness becomes much less variable, which is reflected in the figure as the variability plateaus.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is 1.0 for the ideal case and about 0.95 for f_2 = 0.1.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The same as in figure 10c.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_15.jpg","caption":"FIG. 15. Evolution of the average coverage (a) and $3\\sigma$ variability (b) in $300\\mathrm{mm}$ wafers for two values of by-product reaction probability: $\\beta_{bp} = 10^{-4}$ and $\\beta_{bp} = 10^{-3}$ . The precursor reactivity is $\\beta_{10} = 10^{-2}$ .","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_15","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_15","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":677,"height":850,"image_format":"jpeg","image_sha256":"87c049f1194e0bf91c4bdd66f976cb934a0cd2b14bfd7a4e9ab5a157f1575d1c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":35,"y":24,"width":638,"height":399},{"panel_id":"b","x":20,"y":441,"width":652,"height":406}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the average coverage over time for two different βbp values, where βbp = 10-4 and βbp = 10-3.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the 3σ variability over time for two different βbp values, where βbp = 10-4 and βbp = 10-3.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time, s | Average coverage βbp = 10-4 | Average coverage βbp = 10-3 |\\n|---|---|---|\\n| 0.0 | 0.0 | 0.0 |\\n| 0.5 | 0.4 | 0.4 |\\n| 1.0 | 0.85 | 0.8 |\\n| 1.5 | 1.0 | 0.85 |\\n| 2.0 | 1.0 | 0.85 |\\n| 2.5 | 1.0 | 0.85 |\\n| 3.0 | 1.0 | 0.85 |\"},{\"panel_id\":\"b\",\"text\":\"| Time, s | 3σ variability (%) βbp = 10-4 | 3σ variability (%) βbp = 10-3 |\\n|---|---|---|\\n| 1.0 | 95 | 80 |\\n| 1.5 | 10 | 20 |\\n| 2.0 | 2 | 20 |\\n| 2.5 | 2 | 20 |\\n| 3.0 | 2 | 20 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 80 for βbp = 10-3 and 90 for βbp = 10-4.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Around 20 for βbp = 10-3 and 2 for βbp = 10-4.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 0.4.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 0.85 for βbp = 10-3 and 1.00 for βbp = 10-4.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_19_figure_2.jpg","caption":"Figure 2. Comparison of electrical characteristics of the PEALD-IGZO TFTs deposited using $\\mathrm { O } _ { 2 }$ and $\\mathrm { N } _ { 2 } \\mathrm { O }$ plasma reactants. (a) Transfer curves and (b) PBTS results of the IGZO TFTs. XPS (c) O 1s and (d) N 1s peaks of the IGZO films.","id":"train/atomic-layer-deposition/simulation-usecase/19/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/19/figure_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/Dong-Gyu Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1389,"height":972,"image_format":"jpeg","image_sha256":"a054701d795fbac77bda27ed9618d42eef0d1b9c74b1fb43a4cb9b1abf98cfa4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":45,"y":44,"width":372,"height":400},{"panel_id":"b","x":477,"y":0,"width":903,"height":449},{"panel_id":"c","x":76,"y":501,"width":864,"height":470},{"panel_id":"d","x":1025,"y":562,"width":363,"height":407}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the drain current–gate voltage characteristics of IGZO TFTs fabricated under different ambient conditions. The shift in threshold voltage reflects changes in carrier concentration and device switching behavior.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the positive bias temperature stress (PBTS) stability of IGZO TFTs measured at 95 °C and an electric field of 2 MV/cm. Differences in threshold voltage shift indicate variations in stress reliability under different ambients.\"},{\"panel_id\":\"c\",\"text\":\"The figure presents the O 1s XPS spectra of IGZO films processed under different ambient conditions. The relative peak areas reveal changes in lattice oxygen and oxygen-defect concentrations.\"},{\"panel_id\":\"d\",\"text\":\"The figure shows the N 1s XPS spectra of IGZO films grown under different ambient conditions. The presence and intensity of the N 1s peak confirm nitrogen incorporation into the IGZO matrix.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gate Voltage (V) | Drain Current (A) | Condition |\\n|-----------------:|-----------------:|------------------|\\n| -6 | 10⁻¹² | O₂⁺ 1 s |\\n| -6 | 10⁻¹² | N₂O⁺ 1 s |\\n| -6 | 10⁻¹³ | N₂O⁺ 5 s |\\n| -5 | 10⁻¹¹ | O₂⁺ 1 s |\\n| -5 | 10⁻¹¹ | N₂O⁺ 1 s |\\n| -5 | 10⁻¹² | N₂O⁺ 5 s |\\n| -4 | 10⁻¹⁰ | O₂⁺ 1 s |\\n| -4 | 10⁻¹⁰ | N₂O⁺ 1 s |\\n| -4 | 10⁻¹¹ | N₂O⁺ 5 s |\\n| -3 | 10⁻⁹ | O₂⁺ 1 s |\\n| -3 | 10⁻⁹ | N₂O⁺ 1 s |\\n| -3 | 10⁻¹⁰ | N₂O⁺ 5 s |\\n| -2 | 10⁻⁷ | O₂⁺ 1 s |\\n| -2 | 10⁻⁷ | N₂O⁺ 1 s |\\n| -2 | 10⁻⁸ | N₂O⁺ 5 s |\\n| -1 | 10⁻⁵ | O₂⁺ 1 s |\\n| -1 | 10⁻⁵ | N₂O⁺ 1 s |\\n| -1 | 10⁻⁶ | N₂O⁺ 5 s |\\n| 0 | 10⁻⁴ | O₂⁺ 1 s |\\n| 0 | 10⁻⁴ | N₂O⁺ 1 s |\\n| 0 | 10⁻⁵ | N₂O⁺ 5 s |\\n| 1 | 10⁻³ | O₂⁺ 1 s |\\n| 1 | 10⁻³ | N₂O⁺ 1 s |\\n| 1 | 10⁻⁴| N₂O⁺ 5 s |\\n| 2 | 10⁻³| O₂⁺ 1 s |\\n| 2 | 10⁻³ | N₂O⁺ 1 s |\\n| 2 | 10⁻³| N₂O⁺ 5 s |\\n| 3 | 10⁻³ | O₂⁺ 1 s |\\n| 3 | 10⁻³ | N₂O⁺ 1 s |\\n| 3 | 10⁻³ | N₂O⁺ 5 s |\\n| 4 | 10⁻³ | O₂⁺ 1 s |\\n| 4 | 10⁻³ | N₂O⁺ 1 s |\\n| 4 | 10⁻³ | N₂O⁺ 5 s |\"},{\"panel_id\":\"b\",\"text\":\"| Gate Voltage (V) | Drain Current (A) | Condition |\\n|-----------------:|------------------:|----------------|\\n| -6 | 10⁻¹² | O₂⁺ 1 s |\\n| -6 | 10⁻¹² | N₂O⁺ 1 s |\\n| -6 | 10⁻¹² | N₂O⁺ 5 s |\\n| -5 | 10⁻¹² | O₂⁺ 1 s |\\n| -5 | 10⁻¹² | N₂O⁺ 1 s |\\n| -5 | 10⁻¹² | N₂O⁺ 5 s |\\n| -4 | 10⁻¹¹ | O₂⁺ 1 s |\\n| -4 | 10⁻¹¹ | N₂O⁺ 1 s |\\n| -4 | 10⁻¹¹ | N₂O⁺ 5 s |\\n| -3 | 10⁻¹⁰ | O₂⁺ 1 s |\\n| -3 | 10⁻¹⁰ | N₂O⁺ 1 s |\\n| -3 | 10⁻¹⁰ | N₂O⁺ 5 s |\\n| -2 | 10⁻⁸ | O₂⁺ 1 s |\\n| -2 | 10⁻⁸ | N₂O⁺ 1 s |\\n| -2 | 10⁻⁸ | N₂O⁺ 5 s |\\n| -1 | 10⁻⁶ | O₂⁺ 1 s |\\n| -1 | 10⁻⁶ | N₂O⁺ 1 s |\\n| -1 | 10⁻⁶ | N₂O⁺ 5 s |\\n| 0 | 10⁻⁵ | O₂⁺ 1 s |\\n| 0 | 10⁻⁵ | N₂O⁺ 1 s |\\n| 0 | 10⁻⁵ | N₂O⁺ 5 s |\\n| 1 | 10⁻⁴ | O₂⁺ 1 s |\\n| 1 | 10⁻⁴ | N₂O⁺ 1 s |\\n| 1 | 10⁻⁴ | N₂O⁺ 5 s |\\n| 2 | 10⁻⁴ | O₂⁺ 1 s |\\n| 2 | 10⁻⁴ | N₂O⁺ 1 s |\\n| 2 | 10⁻⁴ | N₂O⁺ 5 s |\\n| 3 | 10⁻⁴ | O₂⁺ 1 s |\\n| 3 | 10⁻⁴ | N₂O⁺ 1 s |\\n| 3 | 10⁻⁴ | N₂O⁺ 5 s |\\n| 4 | 10⁻⁴ | O₂⁺ 1 s |\\n| 4 | 10⁻⁴ | N₂O⁺ 1 s |\\n| 4 | 10⁻³ | N₂O⁺ 5 s |\"},{\"panel_id\":\"c\",\"text\":\"| Binding energy (eV) | Intensity (a.u.) |\\n|---|---|\\n|534 | 70.5% |\\n|532 | 22.5% |\\n|530 | 7.0% |\"},{\"panel_id\":\"d\",\"text\":\"| Binding Energy (eV) | Normalized Intensity | Condition | Remark |\\n|-------------------:|---------------------:|------------------|--------|\\n| 408 | 0.0 | All O₂⁺ 1 s | — |\\n| 408 | 0.0 | All N₂O⁺ 1 s | — |\\n| 408 | 0.1 | All N₂O⁺ 5 s | — |\\n| 404 | 0.0 | All O₂⁺ 1 s | — |\\n| 404 | 0.1 | All N₂O⁺ 1 s | — |\\n| 404 | 0.1 | All N₂O⁺ 5 s | — |\\n| 400 | 0.2 | All O₂⁺ 1 s | — |\\n| 400 | 0.2 | All N₂O⁺ 1 s | — |\\n| 400 | 0.2 | All N₂O⁺ 5 s | — |\\n| 396 | 1.0 | All O₂⁺ 1 s | Peak |\\n| 396 | 1.0 | All N₂O⁺ 1 s | Peak |\\n| 396 | 1.0 | All N₂O⁺ 5 s | Peak |\\n| 392 | 0.2 | All O₂⁺ 1 s | — |\\n| 392 | 0.2 | All N₂O⁺ 1 s | — |\\n| 392 | 0.2 | All N₂O⁺ 5 s | — |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Metal–nitrogen (Ga–N or M–N) bonds. This indicates successful incorporation of nitrogen into the oxide lattice via anion substitution, which helps passivate oxygen vacancies and improve device stability.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Decrease. The relative area of the O𝑑𝑒𝑓 peak decreases from 22.5% in the O₂ sample to 19.9% in the N₂O (5 s) sample, indicating a reduction in oxygen vacancy concentration.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The curves shift to the right, indicating that N2O plasma treatment increases the turn-on voltage compared to the O2 plasma reference, likely due to a reduction in carrier concentration or modification of interface traps.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lower ΔV𝑇𝐻. The N₂O-treated devices (Red/Blue) exhibit significantly smaller threshold voltage shifts under stress compared to the O₂ reference (Black), which is critical for maintaining stable current driving in OLED pixels.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_19_figure_7.jpg","caption":"Figure 7. PBTS stability of the selective $\\mathrm { N } _ { 2 } \\mathrm { O }$ applied IGZO TFTs. (a) Transfer curves as a function of PBTS time of the reference and selectivel $\\mathrm { N } _ { 2 } \\mathrm { O }$ plasma applied IGZO TFTs. (b) Degree of $\\mathrm { V } _ { \\mathrm { T H } }$ shift after 10000 s of PBTS time for IGZO TFTs.","id":"train/atomic-layer-deposition/simulation-usecase/19/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/19/figure_7","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"grouped bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/Dong-Gyu Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1394,"height":364,"image_format":"jpeg","image_sha256":"b44085f6376ab0c47f9d6cdaafd407b19bb616149283cc6b21f19a1b44343b24","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":17,"y":11,"width":905,"height":349},{"panel_id":"b","x":978,"y":38,"width":416,"height":316}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Transfer characteristics (drain current versus gate voltage) of IGZO TFTs under positive bias temperature stress (PBTS) for devices where individual cation layers (In, Ga, or Zn) are selectively treated with N₂O plasma, showing different degrees of threshold voltage shift.\"},{\"panel_id\":\"b\",\"text\":\"Summary of the corresponding threshold voltage shifts (ΔV_TH), demonstrating that N₂O treatment during the gallium oxide sub-cycle significantly improves stability (~50% reduction), while treatment during the indium oxide sub-cycle degrades stability (≈68% increase in ΔV_TH).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gate voltage (V) | Pristine (A) | 100 s (A) | 500 s (A) | 1500 s (A) | 2500 s (A) | 3500 s (A) | 3600 s (A) | 7200 s (A) | 10000 s (A) |\\n|------------------|--------------|-----------|-----------|------------|------------|------------|------------|------------|-------------|\\n| -6 | 1e-12 | 1e-12 | 1e-12 | 1e-12 | 1e-12 | 1e-12 | 1e-12 | 1e-12 | 1e-12 |\\n| -4 | 1e-11 | 1e-11 | 1e-11 | 1e-11 | 1e-11 | 1e-11 | 1e-11 | 1e-11 | 1e-11 |\\n| -2 | 1e-10 | 1e-10 | 1e-10 | 1e-10 | 1e-10 | 1e-10 | 1e-10 | 1e-10 | 1e-10 |\\n| 0 | 1e-9 | 1e-9 | 1e-9 | 1e-9 | 1e-9 | 1e-9 | 1e-9 | 1e-9 | 1e-9 |\\n| 2 | 1e-7 | 1e-7 | 1e-7 | 1e-7 | 1e-7 | 1e-7 | 1e-7 | 1e-7 | 1e-7 |\\n| 4 | 1e-5 | 1e-5 | 1e-5 | 1e-5 | 1e-5 | 1e-5 | 1e-5 | 1e-5 | 1e-5 |\"},{\"panel_id\":\"b\",\"text\":\"| Controlled cation elements | O₂ 1s (Ref) ΔV_TH (V) | N₂O 1s ΔV_TH (V) | N₂O 5s ΔV_TH (V) |\\n|----------------------------|-----------------------|------------------|------------------|\\n| Indium oxide | ~2.4 | ~1.6 (33% decrease) | ~1.2 (50% decrease) |\\n| Gallium oxide | ~2.0 | ~1.0 (50% decrease) | ~0.8 (60% decrease) |\\n| Zinc oxide | ~1.8 | ~1.7 (8% decrease) | ~1.6 (11% decrease) |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Gallium oxide. The Gallium oxide modification results in a ~50% decrease in ΔV𝑇𝐻 (improved stability), whereas the Indium oxide modification causes a ~68% increase (worsened stability) relative to the reference.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Suppression of oxygen vacancies. Gallium is a strong oxygen binder. Selective N₂O treatment during the Gallium cycle effectively reduces oxygen vacancies and defect states (which act as electron traps) without severely disrupting channel conduction, leading to the most stable device operation.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. For the Zinc Oxide–controlled cation, increasing the N₂O exposure to 5 s significantly increases the instability, resulting in a ΔV𝑇𝐻 of +0.83 V compared to the more stable Gallium condition (+0.45 V).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Selective N₂O on Gallium Oxide. This condition yields the lowest ΔV𝑇𝐻 (+0.45 V) compared to Indium (+1.51 V) or Zinc (+0.83 V), ensuring the most stable switching performance under thermal and bias stress.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_25_figure_5.jpg","caption":"Figure 5. Growth properties as a function of surface hydroxyl density. (a) Al atoms added vs OH density. (b) Ligand/Al ratio vs surface OH concentration. Present results compared to data from Puurunen.","id":"train/atomic-layer-deposition/simulation-usecase/25/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/25/figure_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/Kristopher S. Brown et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1125,"height":459,"image_format":"jpeg","image_sha256":"a17496a518bb6a2408d50a52b34263c2089f37bc13b02fb8a6fb41dfa4bd90e3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":6,"width":561,"height":452},{"panel_id":"b","x":569,"y":3,"width":553,"height":449}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows Al atoms added per unit area (Al/nm²) against OH surface density (OH/nm²) for the present study (blue) and Puurunen (black). Both datasets show that generally higher OH surface density corresponds to greater Al uptake.\"},{\"panel_id\":\"b\",\"text\":\"The scatter plot displays the ligand-to-aluminum ratio versus OH surface density for the present study (blue) and Puurunen (black). Generally, the ligand:Al ratio decreases as OH density increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Study| Al atoms added, Al/nm² | OH Surface Density, OH/nm² | \\n|---|---|---|\\n|Puurunen|2.23| 1.48|\\n|Puurunen|2.94| 3.51|\\n|Puurunen|3.71| 5.49|\\n|Puurunen|4.43| 7.48|\\n|Present study|2.78| 2.17|\\n|Present study|3.32| 4.11|\\n|Present study|3.44| 4.08|\\n|Present study|3.62| 4.22|\\n|Present study|3.86| 4.33|\\n|Present study|3.69| 4.49|\\n|Present study|3.12| 4.61|\\n|Present study|4.06| 4.59|\\n|Present study|3.85| 4.72|\\n|Present study|3.86| 5.16|\"},{\"panel_id\":\"b\",\"text\":\"|Study| OH Surface Density, OH/nm² | Ligand : Aluminum Ratio |\\n|---|---|---|\\n|Puurunen|1.18| 2.39|\\n|Puurunen|3.40| 1.84|\\n|Puurunen|6.01| 1.49|\\n|Puurunen|8.78| 1.2|\\n|Present study|2.24| 1.88|\\n|Present study|4.06| 1.68|\\n|Present study|4.13| 1.58|\\n|Present study|4.29| 1.65|\\n|Present study|4.26| 1.59|\\n|Present study|4.47| 1.37|\\n|Present study|4.54| 1.55|\\n|Present study|4.64| 1.48|\\n|Present study|4.69| 1.42|\\n|Present study|5.14| 1.52|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Puurunen's results show a positive correlation. This conclusion is supported by the upward trend of the data points, which rises from left to right. This indicates that as the OH surface density increases (on the x-axis), the number of Al atoms added also increases (on the y-axis).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Puurunen's results show a negative correlation. This is supported by the downward trend of the data points, which descends from left to right. This indicates that as the OH surface density increases, the Ligand : Aluminum Ratio also decreases.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Pruununen’s study covers a wider range of OH surface densities.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_15.jpg","caption":"Figure 15. Growth rate of $\\mathsf{HfO_2}$ in different circumstances versus time for the 16th-20th cycles. The thickness of a monolayer of $\\mathsf{HfO_2}$ is $2.8\\dot{A}$ . Cross shows growth rate considering all observed ALD reactions. Circle shows growth rate when direct ligand exchange during oxygen pulse is considered rather than cooperative effect. Triangle shows growth rate when migration process is switched off. [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_15","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_15","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":644,"height":450,"image_format":"jpeg","image_sha256":"0ffbd08d89218c00f4c08c46e3cc441ee3bb05a7906faccb90545f624916f575","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":638,"height":444}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between simulation time and growth rate, with three different conditions represented by different markers: considering all ALD reactions (red +), cooperative effect is excluded (green circles), and when the migration process is switched off (blue triangle). Excl. cooperation gives the highest growth (~1.4–1.6 Å/cycle), incl. all is intermediate (~0.5–0.75 Å/cycle), and excl. migration is lowest (~0.12–0.22 Å/cycle).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Simulation time (s) | Growth rate – incl. all (Å/cycle) | Growth rate – excl. cooperation (Å/cycle) | Growth rate – excl. migration (Å/cycle) |\\n|---|---|---|---|\\n| 0.0064 | 0.75 | 1.58 | 0.19 |\\n| 0.0068 | 0.59 | 1.45 | 0.12 |\\n| 0.0072 | 0.50 | 1.42 | 0.21 |\\n| 0.0076 | 0.50 | 1.42 | 0.22 |\\n| 0.0080 | 0.65 | 1.59 | 0.16 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Excl. cooperation, Incl. all, Excl. migration\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Disabling migration reduces the growth rate compared to the full model.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Migration is more important to sustain growth. The evidence is that when migration is disabled (“excl. migration”), the growth rate collapses to very low values (~0.12–0.22 Å/cycle) at every time point, far below the full model (~0.5–0.75 Å/cycle). In contrast, disabling cooperation (“excl. cooperation”) does not reduce growth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Cooperation hinders film growth in this model. The evidence is that when cooperation is removed (“excl. cooperation”), the growth rate jumps to the highest values in the plot (~1.4–1.6 Å/cycle) across all times, well above the full model (~0.5–0.75 Å/cycle). By contrast, removing migration lowers growth (~0.12–0.22 Å/cycle), so migration is not what limits growth.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_28_fig_10.jpg","caption":"Fig. 10. Surface state of the adsorbed complex $-\\mathrm{MCl}_x$ of the precursor vs. process temperature. Circles and squares correspond to experiments with $\\mathrm{ZrO_2}$ from [10] and [11], respectively; triangles correspond to $\\mathrm{HfO_2}$ experiment [6]; dashed and dashed-dotted lines correspond to the present study modeling for $\\mathrm{ZrO_2}$ and $\\mathrm{HfO_2}$ , respectively.","id":"train/atomic-layer-deposition/simulation-usecase/28/fig_10","sample_id":"atomic-layer-deposition/simulation-usecase/28/fig_10","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/Maxim Deminsky et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":722,"height":508,"image_format":"jpeg","image_sha256":"ad3a411f1eac5146c5d7cc09bb81c0e4464aa61c4124ed004d7a3cd1002c97be","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":8,"width":712,"height":497}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between temperature (T, °C) and the ratio x = Cl / Me. Data points represent experimental measurements, whereas calculations for Zr and Hf are shown with lines..\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| T,°C | x = Cl / Me |\\n|---|---|\\n| 100 | 2.00 |\\n| 200 | 2.25 |\\n| 300 | 2.30 |\\n| 400 | 2.60 |\\n| 500 | 2.80 |\\n| 600 | 3.00 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No the experimental value does not nicely overlap. Only the Hf experiments of J. Aarik come close, however they are still of by .25 on average.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The calculated values are in the error margins of the data points, so it could be that they overlap.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"They both show an s shape, where initially there is an increase with temperature, but this saturates.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No it is not, the upper limit of the error bars is at 3.50, this would mean that out of four chlorine atoms, still more than three are present. This means that non of them reactive with the surface leading to adsorption.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_28_fig_11.jpg","caption":"Fig. 11. Temperature dependence of the residual chlorine concentration in the growing film; triangles are experimental points [10], and diamonds are simulation results.","id":"train/atomic-layer-deposition/simulation-usecase/28/fig_11","sample_id":"atomic-layer-deposition/simulation-usecase/28/fig_11","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/Maxim Deminsky et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":595,"height":419,"image_format":"jpeg","image_sha256":"59e74a6198d4390a0375566f82fdb3833755375867be2fd5485bded3cfd32002","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":8,"width":595,"height":411}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between temperature and chlorine concentration, indicating a negative correlation where chlorine concentration decreases as temperature increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature, °C | Chlorine concentration, % |\\n|---|---|\\n| 200 | 2.3 |\\n| 250 | 1.5 |\\n| 300 | 1.0 |\\n| 350 | 0.5 |\\n| 400 | 0.1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The temperature has a huge influence on the reaction rates that occur during the ALD cycle. This can be the reason for the higher chlorine content.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"XPS is a technique that can be used to determine the chlorine concentration In this technique, electrons are removed from the material by photons that give insight into the materials composition.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.5%\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_28_fig_6.jpg","caption":"Fig. 6. $\\mathrm{ZrO_2}$ film mass increment as a function of the precursor source temperature. Circles and solid line are experimental [10] and modeling results at the reaction chamber temperature 290 $^\\circ \\mathrm{C}$ ; squares and dashed line are experimental [10] and modeling results at the reaction chamber temperature $180^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/simulation-usecase/28/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/28/fig_6","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/Maxim Deminsky et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":592,"height":486,"image_format":"jpeg","image_sha256":"116b4df59daba097bdc33ef8cdac32311361077444ccba3b838ad9b03d305870","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":7,"width":584,"height":478}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the relationship between the mass increment and the ZrCl₄ source temperature for two different reactor temperatures. As the temperature increases, the mass increment also increases, showing a positive correlation, till there is soft-saturation for both reactor temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ZrCl₄ source temperature, °C | Mass increment, a.u. 290|Mass increment, a.u. 180|\\n|---|---|---|\\n| 130 | 0.2 |-|\\n| 135 | 0.3 |-|\\n| 140 | 0.67 |-|\\n| 145 | 0.85 |0.80|\\n| 150 | 0.91 |1.05|\\n| 155 | 0.95 |1.1|\\n| 160 | 1.0 |1.15|\\n| 165 | - |1.20|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lower temperature can lead to more ligand incorporation which in its turn leads to higher mass as Cl is heavier than oxygen.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If this difference is not high enough there can be condensation of the precursor in the reactor, whereas there is always the desire to only work with gas phase species.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the higher source temperature ranges. This is mostly in the saturated growth regime.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.15 a.u.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_28_fig_7.jpg","caption":"Fig. 7. $\\mathrm{ZrO_2}$ film growth rate (average film mass and thickness increments per cycle) as a function of the process temperature: squares and circles correspond to experimental average film thicknesses and mass increments per cycle [10]. Dashed and solid lines correspond to the calculated results by the minimum and extended mechanism. The dashed area corresponds to sensitivity analysis for the extended mechanism.","id":"train/atomic-layer-deposition/simulation-usecase/28/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/28/fig_7","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/Maxim Deminsky et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":592,"height":452,"image_format":"jpeg","image_sha256":"5a3b4afd7e34583b447a8dc3edc84090e153a1769cea7cc984a428a5959134c2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":9,"width":582,"height":442}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between temperature (T °C) and the thickness and mass increment per cycle, experimentally measured and calculated using minimum and extended mechanisms.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| T °C |average increment |\\n|---|---|\\n| 0 | 0.4 | \\n| 100 | 1.2 | \\n| 200 | 1.0 | \\n| 300 | 0.9 |\\n| 400 | 0.75 | \\n| 500 | 0.7 | \\n| 600 | 0.55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The points fall in the range of the extended model and can therefore be fitted with such a model.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There probably is a minimum temperature as the source temperature has to be lower than the processing temperature, but high enough to evaporate the precursor.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.2 a.u./cycle\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Except for some outliers in general the model overestimates the experimental data, even when considering the error bars.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_28_fig_8.jpg","caption":"Fig. 8. $\\mathrm{HfO_2}$ film growth rate (average film mass and thickness increments per cycle) as a function of the process temperature: squares and circles correspond to experimental results [6,8]. Dashed and solid lines correspond to the calculated results by the minimum and extended mechanism. Dashed area corresponds to sensitivity analysis for the extended mechanism.","id":"train/atomic-layer-deposition/simulation-usecase/28/fig_8","sample_id":"atomic-layer-deposition/simulation-usecase/28/fig_8","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/Maxim Deminsky et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":589,"height":467,"image_format":"jpeg","image_sha256":"99720946e4bbea0fe5e4ebda25bcf7c1424747eaf14c677f1af2949a251d5822","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":0,"width":580,"height":467}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between temperature (T, °C) and the thickness and mass increments per cycle for an experiment. The data points are compared with calculated values using minimum and extended mechanisms.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| T °C |average increment |\\n|---|---|\\n| 0 | 0.55 | \\n| 100 | 1.2 | \\n| 200 | 1.1 | \\n| 300 | 0.95 |\\n| 400 | 0.8 | \\n| 500 | 0.6 | \\n| 600 | 0.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The simple model does not cover the data points, but the range that the extended model does overlap with all the data points, so the extended model is required.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"175 degrees Celcius.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The maximum temperature that the reactor can achieve, or the stability of this temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_29_fig6.jpg","caption":"Fig.6. the experimental growth rate in which deposition was carried out at $50^{\\circ}C$ substrate temperature using $3s$ water vapor pulse (Xie et al., 2007). (For interpretation of the references to colour in this figure legend, the reader is referred to the web version of the article.)","id":"train/atomic-layer-deposition/simulation-usecase/29/fig6","sample_id":"atomic-layer-deposition/simulation-usecase/29/fig6","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":969,"height":572,"image_format":"jpeg","image_sha256":"9a55ee32710a35fbcbc30149a01ef7a4839d35a9ec283fb87f62a6fef91b36a9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":6,"width":967,"height":562}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot illustrates the validation of a computational model for Atomic Layer Deposition (ALD) by comparing the calculated growth rates (nm/cycle) against pulse time (s) with experimental data (measured and interpolated). The coefficient of determination is 0.85.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulse Time (s) | Growth Rate (nm/cyc) | Data series |\\n|---|---|---|\\n| 0 | 0 | GR exp | \\n| 1 | 0.121 | GR exp | \\n| 2 | 0.121 | GR exp | \\n| 10 | 0.120 | GR exp |\\n| 0.0 | 0.001 | Gr exp (Interp) |\\n| 0.2 | 0.013 | Gr exp (Interp) |\\n| 0.4 | 0.033 | Gr exp (Interp) |\\n| 0.6 | 0.059 | Gr exp (Interp) |\\n| 0.8 | 0.079 | Gr exp (Interp) |\\n| 1.0 | 0.101 | Gr exp (Interp) |\\n| 1.2 | 0.108 | Gr exp (Interp) |\\n| 1.4 | 0.114 | Gr exp (Interp) |\\n| 1.6 | 0.119 | Gr exp (Interp) |\\n| 1.8 | 0.121 | Gr exp (Interp) |\\n| 2.0 | 0.120 | Gr exp (Interp) |\\n| 4.0 | 0.119 | Gr exp (Interp) |\\n| 6.0 | 0.120 | Gr exp (Interp) |\\n| 8.0 | 0.120 | Gr exp (Interp) |\\n| 10.0 | 0.120 | Gr exp (Interp) |\\n| 0.2 | 0.039 | Gr calc |\\n| 0.5 | 0.056 | Gr calc |\\n| 0.6 | 0.066 | Gr calc |\\n| 0.8 | 0.075 | Gr calc |\\n| 1.0 | 0.081 | Gr calc |\\n| 1.2 | 0.089 | Gr calc |\\n| 1.4 | 0.095 | Gr calc |\\n| 1.6 | 0.099 | Gr calc |\\n| 1.8 | 0.104 | Gr calc |\\n| 2.0 | 0.109 | Gr calc |\\n| 4.0 | 0.128 | Gr calc |\\n| 6.0 | 0.135 | Gr calc |\\n| 8.0 | 0.138 | Gr calc |\\n| 10.0 | 0.139 | Gr calc |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The transition occurs between the 2-second and 4-second pulse times. The theoretical model underestimates the growth rate at 2 s. By the 4 s mark, the model surpasses the experimental data.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The experimental data reaches saturation faster than the theoretical model .\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The experimental data more closely resembles an ideal ALD process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The theoretical model predicts that the substrate requires a pulse time of approximately 4 to 6 seconds to reach full saturation, whereas the experimental data demonstrates that saturation is actually achieved in just 1 second. Consequently, an engineer relying solely on the model would likely program the reactor to dose the precursor for longer than necessary to ensure full coverage. This discrepancy leads to waste because the excess precursor introduced after the 1-second mark cannot react with the already saturated surface and is simply purged from the system.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_29_fig7.jpg","caption":"Fig.7. t t t references to colour in this figure legend, the reader is referred to the web version of this article.)","id":"train/atomic-layer-deposition/simulation-usecase/29/fig7","sample_id":"atomic-layer-deposition/simulation-usecase/29/fig7","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":967,"height":619,"image_format":"jpeg","image_sha256":"3f2bebfc418df234be12141438719f3801436ac8c6f06f24201945d1ff1fdecc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":961,"height":607}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot illustrates the validation of a computational model for Atomic Layer Deposition (ALD) with TDEAT by comparing the calculated growth rates (nm/cycle) against pulse time (s) with experimental data (measured and interpolated). The coefficient of determination is 0.99, which indicates a strong correlation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulse Time (s) | Growth Rate (nm/cyc) | Data series |\\n| --- | --- | --- |\\n| 0,0 | 0,000 | Gr exp |\\n| 1,0 | 0,023 | Gr exp |\\n| 2,0 | 0,040 | Gr exp |\\n| 4,0 | 0,040 | Gr exp |\\n| 0,0 | 0,000 | Gr exp (interpolated) |\\n| 0,4 | 0,010 | Gr exp (interpolated) |\\n| 0,8 | 0,020 | Gr exp (interpolated) |\\n| 1,0 | 0,023 | Gr exp (interpolated) |\\n| 1,4 | 0,027 | Gr exp (interpolated) |\\n| 1,8 | 0,032 | Gr exp (interpolated) |\\n| 2,0 | 0,033 | Gr exp (interpolated) |\\n| 2,4 | 0,035 | Gr exp (interpolated) |\\n| 2,8 | 0,038 | Gr exp (interpolated) |\\n| 3,0 | 0,038 | Gr exp (interpolated) |\\n| 3,4 | 0,039 | Gr exp (interpolated) |\\n| 3,8 | 0,040 | Gr exp (interpolated) |\\n| 4,0 | 0,040 | Gr exp (interpolated) |\\n| 0,4 | 0,014 | Gr calc |\\n| 0,8 | 0,020 | Gr calc |\\n| 1,0 | 0,023 | Gr calc |\\n| 1,4 | 0,028 | Gr calc |\\n| 1,8 | 0,030 | Gr calc |\\n| 2,0 | 0,032 | Gr calc |\\n| 2,4 | 0,034 | Gr calc |\\n| 2,8 | 0,036 | Gr calc |\\n| 3,0 | 0,037 | Gr calc |\\n| 3,4 | 0,039 | Gr calc |\\n| 3,8 | 0,041 | Gr calc |\\n| 4,0 | 0,041 | Gr calc |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The graph displays an R² value of 0.99. It implies an excellent statistical fit. This value means that the theoretical model explains 99% of the variance in the experimental data and predicts the growth rate with very high accuracy .\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The data point at 2 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. At 0.5 seconds, the growth rate is only about ~0.01 nm/cycle. It is below the saturation level of ~0.04 nm/cyc. This indicates the surface is not fully covered, which would lead to poor film quality.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 2s.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_29_fig8.jpg","caption":"Fig.8. of the references to colour in this figure legend, the reader is referred to the web version of this article.)","id":"train/atomic-layer-deposition/simulation-usecase/29/fig8","sample_id":"atomic-layer-deposition/simulation-usecase/29/fig8","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":970,"height":625,"image_format":"jpeg","image_sha256":"3b1c161d5fc6f87a23dfa3250a2782dadee07cb5d851777bb22e78a53186ba93","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":9,"width":964,"height":616}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot illustrates the validation of a computational model for Atomic Layer Deposition (ALD) with TDEAH by comparing the calculated growth rates (nm/cycle) against pulse time (s) with experimental data. The coefficient of determination is 0.93, which indicates a strong correlation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulse Time (s) | Growth Rate (nm/cyc) | Data series |\\n| --- | --- | --- |\\n| 0,0 | 0,000 | Gr exp |\\n| 1,0 | 0,039 | Gr exp |\\n| 2,0 | 0,088 | Gr exp |\\n| 3,0 | 0,115 | Gr exp |\\n| 4,0 | 0,121 | Gr exp |\\n| 5,9 | 0,133 | Gr exp |\\n| 8,0 | 0,145 | Gr exp |\\n| 12,0 | 0,141 | Gr exp |\\n| 1,0 | 0,064 | Gr calc |\\n| 2,0 | 0,079 | Gr calc |\\n| 3,0 | 0,094 | Gr calc |\\n| 4,0 | 0,109 | Gr calc |\\n| 6,0 | 0,125 | Gr calc |\\n| 8,0 | 0,134 | Gr calc |\\n| 12,0 | 0,150 | Gr calc |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It generally underestimates the experimental values, except for the first and the last data points.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After ~ 8s.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. While the experimental data shows the growth rate reaching a saturation between 8 and 12 seconds, the model predicts a continued increase in growth rate during that same interval. This discrepancy leads the model to overestimate the growth rate at 12 seconds, failing to replicate the self-limiting behavior of an ALD process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 1 and 2 seconds and between 8 and 12 seconds.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_29_fig9.jpg","caption":"Fig.9. t t references to colour in this figure legend, the reader is referred to the web version of this article.)","id":"train/atomic-layer-deposition/simulation-usecase/29/fig9","sample_id":"atomic-layer-deposition/simulation-usecase/29/fig9","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":967,"height":630,"image_format":"jpeg","image_sha256":"365098327a8e02c7c22cdcb80fb0ddbdf8e18871912a8d685bb4db4555db1f5f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":4,"width":967,"height":624}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot illustrates the validation of a computational model for Atomic Layer Deposition (ALD) with TEMAH by comparing the calculated growth rates (nm/cycle) against pulse time (s) with experimental data. The coefficient of determination is 0.93, which indicates a strong correlation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulse time (s) | Growth Rate (nm/cyc) | Data series |\\n|---|---|---|\\n| 0,0 | 0,000 | Gr exp |\\n| 0,2 | 0,030 | Gr exp |\\n| 0,5 | 0,066 | Gr exp |\\n| 0,8 | 0,070 | Gr exp |\\n| 1,2 | 0,071 | Gr exp |\\n| 1,6 | 0,072 | Gr exp |\\n| 2,0 | 0,072 | Gr exp |\\n| 3,0 | 0,074 | Gr exp |\\n| 4,0 | 0,074 | Gr exp |\\n| 0,2 | 0,044 | Gr calc |\\n| 0,5 | 0,054 | Gr calc |\\n| 0,8 | 0,061 | Gr calc |\\n| 1,2 | 0,067 | Gr calc |\\n| 1,6 | 0,069 | Gr calc |\\n| 2,0 | 0,071 | Gr calc |\\n| 3,0 | 0,073 | Gr calc |\\n| 4,0 | 0,075 | Gr calc |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The experimental process reaches saturation faster.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The beginning of the curve contributes the most.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After ~ 1s.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It would have no effect on the film thickness. The experimental data shows a saturation plateau; this confirms the process is self-limiting. Once the surface is saturated (which happens before 2 seconds), adding extra precursor due to an accidental fluctuation does not result in extra growth.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_16.jpg","caption":"Fig. 16 - Time evolution of the maximum reactant mole fraction inside the reactor chamber.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_16","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_16","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_16.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1014,"height":525,"image_format":"jpeg","image_sha256":"22f11d17f703bcaedbd84692e28bee36647d115f978110b3465bf935974090f1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":1008,"height":517}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart plot the maximum reactant mole fraction as a function of time for TMA and water.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Water Mole Fraction | TMA Mole Fraction |\\n|----------|----------------------|--------------------|\\n| 0.0 | 1.00 | 1.00 |\\n| 0.1 | 0.70 | 0.30 |\\n| 0.2 | 0.40 | 0.20 |\\n| 0.3 | 0.25 | 0.15 |\\n| 0.5 | 0.10 | 0.05 |\\n| 1.0 | 0.02 | 0.02 |\\n| 2.0 | 0.00 | 0.01 |\\n| 5.0 | 0.00 | 0.01 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In order to study the purging efficiency of the reactor, the maximum reactant mole fraction inside the whole chamber was traced during the ALD pulses and purging steps of the ALD cycle, for both reactants.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The maximum mole fraction inside the chamber during the first stages of the exposure time is close to 1, as the computed reactant pulses have a high reactant composition. After the reactant pulses, the maximum mole fraction quickly drops, as the reactor purging step begins.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The results are obtained bysimulating only the transport of chemical species inside thereactor. In order to get a more reliable value for the purging time, chemical reaction kinetics and adsorption/desorption ofspecies on the reactor walls must be taken into account\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_8.jpg","caption":"Fig. 8 - Feeding system model results for the TMA and $\\mathbf{H}_2\\mathbf{O}$ reactant pulses: a) flow rate, b) molar fraction averaged at the feeding system outlet.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_8","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_8","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1012,"height":458,"image_format":"jpeg","image_sha256":"6da731400c5af3cad2d32f6f968de9da5cbd8276c8e8f7dcf71fa684b775617a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":508,"height":403},{"panel_id":"b","x":514,"y":7,"width":492,"height":391}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the results from feeding system model of the flow rate of TMA and water over time, with both decreasing rapidly.\"},{\"panel_id\":\"b\",\"text\":\"The line chart displays the averaged molar fraction of TMA and water over time for feeding system outlet, with both fractions decreasing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Flow Rate - Water (sccm) | Flow Rate - TMA (sccm) |\\n|----------|---------------------------|-------------------------|\\n| 0.00 | 700 | 450 |\\n| 0.02 | 500 | 300 |\\n| 0.05 | 200 | 100 |\\n| 0.10 | 50 | 20 |\\n| 0.15 | - | - |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Molar Fraction - Water | Molar Fraction - TMA |\\n|----------|-------------------------|-----------------------|\\n| 0.00 | 0.95 | 0.90 |\\n| 0.02 | 0.80 | 0.60 |\\n| 0.05 | 0.40 | 0.20 |\\n| 0.10 | 0.10 | 0.05 |\\n| 0.15 | 0.06 |0.05 |\\n| 0.2 | 0.03 |0.02 |\\n| 0.25 | 0 | 0 |\\n| 0.3 | 0 |0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The calculated TMA and H2O pulses as a function of time, in terms of flow rate and averaged molar fraction at the feeding system outlet are shown in images a and b respectively\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A higher flow rate for H2O than for TMA for the whole duration of the pulse, leading to an overall higher quantity of the delivered H2O. This is attributed to the higher vapor pressure of H2O inside the reactant bottles and to the longer opening time of the ALD valve above the H2O bottle(60 ms and 25 ms for H2O and TMA, respectively).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reactant molar fraction is substantial during both pulses, whereas Ar represents only roughly10 wt% of the gas mixture. Notably, it is predicted that although the H2O valve opening time is longer and the quantity of H2O entering the feeding system is higher, the TMA molecules evacuate the feeding system slower, i.e the feeding system takes more time to purge. This is attributed to the slower diffusion rate in N2of TMA compared to H2O, since the molecules of the former are bigger and heavier than the latter\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. The feeding system is purged from both reactants in 0.3 s. \\n2. The total calculated amounts entering the reactor are 0.63 mg for TMA and 0.408 mg for H2O.\\n3. The flow rate of the feeding system after the reactant pulses are 30 sccm\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_9.jpg","caption":"Fig. 9 - Outlet pressure variation vs time: model predictions vs Pirani gauge measurements.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_9","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_9","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1181,"height":598,"image_format":"jpeg","image_sha256":"66f20de20a119a045a9c2ef9d3cff2ee604e1e811b7b4489c7b0260709a2bc1a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1184,"height":594}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart compares the outlet pressure over time for experimental data and a model.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Outlet Pressure - Experiments (Torr) | Outlet Pressure - Model (Torr) |\\n|----------|---------------------------------------|---------------------------------|\\n| 0 | 0.049 | 0.049 |\\n| 5 | 0.075 (H₂O peak) | 0.074 |\\n| 10 | 0.058 (TMA peak) | 0.057 |\\n| 15 | 0.075 (H₂O peak) | 0.074 |\\n| 20 | 0.049 | 0.049 |\\n| 25 | 0.075 (H₂O peak) | 0.074 |\\n| 30 | 0.058 (TMA peak) | 0.057 |\\n| 35 | 0.075 (H₂O peak) | 0.074 |\\n| 40 | 0.049 | 0.049 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The predicted outlet pressure with the Pirani conversion(Pconv) variation during three ALD cycles shown in the figure is compared with the experimental measurements.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In particular, the outlet peak heights are captured and thus the dynamic response to the reactant pulses. This validates the coupling of the two CFD models\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the pressure reading given by the Pirani gauge is gas dependent, it will vary with the gas composition. The pressure reading is performed via the measurement of the gas thermal conductivity, which is inversely proportional to the molecular mass of the gas. As the gauge is calibrated for nitrogen, a gas with a higher molecular mass than N2(28 g/mol) will lead to a lower pressure reading, while a gas with a lower molecular mass will have the opposite effect\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_35_fig_2.jpg","caption":"Fig. 2. Effect of substrate heat-treatment temperature on the amount of aluminum adsorbed $\\Delta c_{\\mathrm{Al}}$ in the $\\mathrm{AlMe}_3$ reaction (a) with alumina (reaction at $150^{\\circ}\\mathrm{C}$ : $(\\Delta \\Omega)$ [21]) and (b) with silica (reaction at $150^{\\circ}\\mathrm{C}$ : $(\\bigcirc)$ [20], reaction at $250^{\\circ}\\mathrm{C}$ : $(\\square)$ [19]). Lines have been fitted to the experimental data; the confidence limits represent one standard deviation. Surface OH group concentrations $c_{(\\mathrm{O})\\mathrm{H}}(\\times , + )$ are shown for reference [20-22].","id":"train/atomic-layer-deposition/simulation-usecase/35/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/35/fig_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/Riikka L. Puurunen.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":578,"height":230,"image_format":"jpeg","image_sha256":"5bff4bb9b7d6d4e56d7930d4b5e5c8c76d9957b202c8844161287e66c2d943ef","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":288,"height":230},{"panel_id":"b","x":307,"y":0,"width":271,"height":230}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the effect of alumina heat-treatment temperature on both the aluminum adsorbed per cycle (Δc_Al, triangles) and the surface OH group concentration (c_(O)H, X markers). Both quantities decrease with increasing pretreatment temperature (200–800°C). The linear fit to Δc_Al yields a = 5.9 ± 0.2 nm⁻² and b = −0.0050 ± 0.0003, indicating that higher pretreatment temperatures reduce aluminum uptake.\"},{\"panel_id\":\"b\",\"text\":\"The scatter plot shows analogous data for silica substrates, with Δc_Al measured at two reaction temperatures (150°C: circles; 250°C: squares) and c_(O)H shown as + markers. The fit gives a = 4.7 ± 0.3 nm⁻² and b = −0.0033 ± 0.0005. Both Δc_Al and c_(O)H decrease with heat-treatment temperature, with c_(O)H declining more steeply at higher temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Alumina heat-treatment[°C] | ΔCAl(OH)[nm-2] |\\n|---|---|\\n| 200 | 6 |\\n| 400 | 5 |\\n| 600 | 4 |\\n| 800 | 2 |\"},{\"panel_id\":\"b\",\"text\":\"| Silica heat-treatment[°C] | ΔCSi(OH)[nm-2] |\\n|---|---|\\n| 200 | 7 |\\n| 400 | 6 |\\n| 600 | 5 |\\n| 800 | 3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both Δc_Al and c_(O)H decrease with increasing heat-treatment temperature on both alumina and silica substrates. However, c_(O)H decreases more rapidly than Δc_Al, particularly at higher temperatures. At elevated pretreatment temperatures, c_(O)H can even fall below Δc_Al, indicating that the simple model where each OH group binds one aluminum atom cannot fully explain the observed growth. This divergence suggests that AlMe₃ can also adsorb through mechanisms other than ligand exchange with OH groups, such as dissociation on oxygen bridges.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher heat-treatment temperatures cause dehydroxylation, where pairs of surface OH groups combine to form oxygen bridges and release water, thereby reducing the concentration of reactive OH sites available for AlMe₃ chemisorption.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Circles represent Δc_Al measured at 150°C reaction temperature, squares represent Δc_Al at 250°C reaction temperature, and + markers represent the surface OH group concentration c_(O)H.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Alumina shows higher initial aluminum uptake, with a fitted intercept of a = 5.9 ± 0.2 nm⁻² compared to a = 4.7 ± 0.3 nm⁻² for silica. This difference correlates with the higher initial OH group concentration on alumina surfaces. Additionally, alumina and silica have different surface chemistries and OH group types (isolated, bridged, hydrogen-bonded), which affect their reactivity toward AlMe₃. The steeper slope for alumina (b = −0.0050) versus silica (b = −0.0033) also indicates that alumina's aluminum uptake is more sensitive to dehydroxylation.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_35_fig_3.jpg","caption":"Fig. 3. Effect of the OH group surface concentration $c_{(\\mathrm{O})\\mathrm{H}}$ on the reaction of $\\mathrm{AlMe}_3$ : (a) aluminum atoms adsorbed, $\\Delta c_{\\mathrm{Al}}$ , (b) methyl groups adsorbed, $\\Delta c_{\\mathrm{Me}}$ , and (c) the average $\\mathrm{Me / Al}$ ratio in the adsorbed species $(\\Delta c_{\\mathrm{Me}} / \\Delta c_{\\mathrm{Al}})$ (data for $\\Delta c_{\\mathrm{Al}}$ and $c_{(\\mathrm{O})\\mathrm{H}}$ from Figs. 1 and 2; data for $\\Delta c_{\\mathrm{Me}}$ from references [19-21]). In panels (a) and (b), solid lines show fits to the experimental data; the confidence limits represent 1 standard deviation. The dashed line in panels (a-c) show the results expected for the chemistry of Eq. (6) (with $\\Delta c_{\\mathrm{Me}}^{\\mathrm{max}} = 6.0 \\mathrm{nm}^{-2}$ ).","id":"train/atomic-layer-deposition/simulation-usecase/35/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/35/fig_3","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/Riikka L. Puurunen.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":736,"height":531,"image_format":"jpeg","image_sha256":"cfdc893c77c72be02aeeb6360df8247ce66228f04cb0809238c915b7b0159fa9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":732,"height":256},{"panel_id":"b","x":0,"y":288,"width":329,"height":243},{"panel_id":"c","x":356,"y":288,"width":323,"height":243}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows Δc_Al (aluminum adsorbed per cycle) versus surface OH concentration c_(O)H, combining data from alumina (triangles, 80–300°C) and silica (circles 150°C, squares 250°C). The solid line is a linear fit yielding a = 1.68 ± 0.09 nm⁻² and b = 0.37 ± 0.02. The dashed line represents the theoretical prediction assuming one OH binds one Al atom (Eq. 6), which clearly fails to describe the data.\"},{\"panel_id\":\"b\",\"text\":\"The scatter plot shows Δc_Me (methyl groups adsorbed) versus c_(O)H. The solid fit gives a = 4.9 ± 0.2 nm⁻² and b = 0.14 ± 0.06, indicating Δc_Me is nearly constant (~5 nm⁻²) regardless of OH concentration. The dashed theoretical line again fails to match observations.\"},{\"panel_id\":\"c\",\"text\":\"The scatter plot shows the average Me/Al ratio (Δc_Me/Δc_Al) versus c_(O)H. The ratio decreases from ~3 at low c_(O)H toward ~2 at high c_(O)H. The solid curve fits the experimental trend while the dashed line shows the inadequate theoretical prediction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| c_(O)H, nm⁻² | Δc_Al 80-300°C alumina (nm⁻²) | Δc_Al 150°C silica (nm⁻²) | Δc_Al 250°C silica (nm⁻²) |\\n|---|---|---|---|\\n| 1 | 2.1 | - | - |\\n| 2 | 2.4 | 2.9 | - |\\n| 3 | 2.8 | - | 2.7 |\\n| 4 | 3.2 | - | 3.0 |\\n| 5 | 3.5 | - | - |\\n| 6 | 3.9 | - | - |\\n| 8 | 4.6 | - | - |\\n| 9 | 5.0 | - | - |\"},{\"panel_id\":\"b\",\"text\":\"| c_(O)H, nm⁻² | Δc_Me 80-300°C alumina (nm⁻²) | Δc_Me 150°C silica (nm⁻²) | Δc_Me 250°C silica (nm⁻²) |\\n|---|---|---|---|\\n| 1 | 5.0 | 5.2 | - |\\n| 2 | 5.2 | - | - |\\n| 3 | 5.5 | - | 5.7 |\\n| 4 | 5.6 | - | 5.5 |\\n| 5 | 5.8 | - | - |\\n| 6 | 5.9 | - | - |\\n| 8 | 6.0 | - | - |\\n| 9 | 6.1 | - | - |\"},{\"panel_id\":\"c\",\"text\":\"| c_(O)H, nm⁻² | Δc_Me/Δc_Al 80-300°C alumina | Δc_Me/Δc_Al 150°C silica | Δc_Me/Δc_Al 250°C silica |\\n|---|---|---|---|\\n| 1 | 2.4 | 1.8 | - |\\n| 2 | 2.2 | - | - |\\n| 3 | 2.0 | - | 2.1 |\\n| 4 | 1.8 | - | 1.9 |\\n| 5 | 1.7 | - | - |\\n| 6 | 1.5 | - | - |\\n| 8 | 1.4 | - | - |\\n| 9 | 1.3 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The intercept represents the amount of aluminum that would adsorb on an oxide surface with zero OH groups. Since AlMe₃ retains all three methyl ligands when no OH groups are present (Me/Al = 3), this aluminum must chemisorb through dissociation or association reactions with oxygen bridges rather than ligand exchange. Multiplying a by 3 gives ~5.0 nm⁻², which matches the observed Δc_Me at low OH concentrations, confirming internal consistency of the model.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dashed lines represent predictions from a simplified model (Eq. 6) assuming each OH group binds exactly one aluminum atom via ligand exchange. The systematic deviation from experimental data proves this simple one-to-one correspondence is invalid for the AlMe₃/H₂O ALD process.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At low c_(O)H, AlMe₃ adsorbs primarily through dissociation or association on oxygen bridges, retaining all three methyl groups (Me/Al ≈ 3). As c_(O)H increases, more aluminum atoms attach via ligand exchange reactions that release methyl groups as methane. Each OH group that reacts removes one methyl ligand, so the average number of methyl groups per adsorbed aluminum decreases. At high OH concentrations, the Me/Al ratio approaches 2, indicating that on average one methyl is released per adsorbed aluminum.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 5 to 6 methyl groups per nm² are adsorbed at saturation. This value is nearly constant because steric hindrance by the bulky methyl groups, not OH availability, determines the saturation coverage.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_36_figure_2.jpg","caption":"Figure 2. (a) WCA values as a function of ALD $\\mathrm{Al}_2\\mathrm{O}_3$ cycles with a general recipe at $150^{\\circ}\\mathrm{C}$ for four different substrates: ODPA/Ti, Ti, $\\mathrm{SiO}_2$ , and HF-treated Si. The insets show WCA images captured using a three-times-magnified optical lens in a WCA analyzer. (b) Al 2p XPS spectra of $\\mathrm{Al}_2\\mathrm{O}_3$ on ODPA/Ti for 50, 70, and 100 ALD cycles.","id":"train/atomic-layer-deposition/simulation-usecase/36/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/36/figure_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/Seunggi Seo et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":513,"height":812,"image_format":"jpeg","image_sha256":"1bb47c8d3abdf4ff2623aa6afade85251904a9d172bc8f79b91971b29efb0d38","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":510,"height":384},{"panel_id":"b","x":1,"y":414,"width":506,"height":396}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The WCA plot shows distinct initial contact angles for the four substrates, followed by progressive convergence with increasing ALD cycles. ODPA/Ti maintains a high angle through early cycles before dropping sharply between 100 and 150 cycles. HF-treated Si reaches its final angle by ~25 cycles, while SiO₂ and Ti follow nearly identical trajectories after that point. By 150 cycles, all surfaces converge near ~45°.\"},{\"panel_id\":\"b\",\"text\":\"The Al 2p spectra display a common peak centered near ~75 eV for all cycle counts. Peak intensity increases monotonically from 50 to 100 cycles, while peak position and width remain essentially unchanged. The spectra therefore differ primarily in amplitude rather than energy shift.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycles | ODPA/Ti (deg) | HF-treated Si (deg) | SiO₂ (deg) | Ti (deg) |\\n|-----------|----------------|----------------------|------------|----------|\\n| 0 | ~110 | ~90 | ~70 | ~60 |\\n| 25 | ~110 | ~45 | ~45 | ~45 |\\n| 50 | ~105 | ~45 | ~45 | ~45 |\\n| 100 | ~90 | ~45 | ~45 | ~45 |\\n| 150 | ~45 | ~45 | ~45 | ~45 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding energy (eV) | Relative intensity trend |\\n|---------------------|--------------------------|\\n| ~73.0 | Very low |\\n| ~74.0 | Rising |\\n| ~75.0 | Maximum (100 > 70 > 50) |\\n| ~76.0 | Decreasing |\\n| ~77.0 | Very low |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Each substrate begins with a distinct contact-angle value, but the curves progressively collapse toward a common range as ALD cycles increase. ODPA/Ti remains hydrophobic through early cycles before declining sharply, whereas HF-treated Si reaches its final angle quickly and remains constant. SiO₂ and Ti show nearly identical behavior after the initial cycles. Overall, increasing ALD cycles reduce substrate-dependent differences.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ODPA/Ti.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-All spectra peak near ~75 eV.\\n, -Peak intensity increases from 50 to 100 cycles.\\n, -Peak widths and positions remain nearly unchanged.\\n, -Differences are dominated by amplitude, not energy shift.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The stable peak position indicates that the chemical state of aluminum remains consistent as the film grows. Increasing cycle count primarily increases signal intensity rather than altering bonding environment. This suggests uniform film growth rather than a change in aluminum coordination or oxidation state.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_36_figure_5.jpg","caption":"Figure 5. WCA values as a function of the number of ALD $\\mathrm{Al}_2\\mathrm{O}_3$ cycles for up to 150 cycles (a) using an ALD process with decreased TMA pressure (from 8.9 to 1.3 Torr) and (b) using a decreased TMA pressure process with increased Ar purging (TMA injection pressure decreased from 8.9 to 1.3 Torr) and no purging pressure increased from 1.3 to 8.9 Torr) over 370 cycles at $150^{\\circ}\\mathrm{C}$ for three different substrates, ODPA/Ti, Ti, and $\\mathrm{SiO}_2$ and HF-treated Si. The insets show WCA images captured using a $3\\times$ magnified optical lens in a WCA analyzer.","id":"train/atomic-layer-deposition/simulation-usecase/36/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/36/figure_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/Seunggi Seo et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":517,"height":795,"image_format":"jpeg","image_sha256":"34d3c30b795ac4426ceaa0d6ee9125349f3b8a942c82466eec07079ab9660ecc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":512,"height":381},{"panel_id":"b","x":1,"y":406,"width":515,"height":390}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Under reduced TMA pressure, HF-treated Si, SiO₂, and Ti exhibit a rapid decrease in WCA to ~45° within the first 25 ALD cycles, after which their values remain constant. ODPA/Ti behaves differently, maintaining a high contact angle (~110°) through early cycles and decreasing gradually to ~90° by 150 cycles.\"},{\"panel_id\":\"b\",\"text\":\"With reduced TMA pressure and increased Ar purge, the same three substrates again converge rapidly to ~45° and remain stable over the entire 370-cycle range. ODPA/Ti shows only a slight decrease from ~110° to ~105°, indicating strong resistance to long-term hydrophilization under these conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycles | ODPA/Ti (deg) | HF-treated Si (deg) | SiO₂ (deg) | Ti (deg) |\\n|-----------|----------------|----------------------|------------|----------|\\n| 0 | ~110 | ~90 | ~70 | ~60 |\\n| 25 | ~110 | ~45 | ~45 | ~45 |\\n| 50 | ~110 | ~45 | ~45 | ~45 |\\n| 100 | ~105 | ~45 | ~45 | ~45 |\\n| 150 | ~90 | ~45 | ~45 | ~45 |\"},{\"panel_id\":\"b\",\"text\":\"| ALD cycles | ODPA/Ti (deg) | HF-treated Si (deg) | SiO₂ (deg) | Ti (deg) |\\n|-----------|----------------|----------------------|------------|----------|\\n| 0 | ~110 | ~90 | ~70 | ~60 |\\n| 25 | ~110 | ~45 | ~45 | ~45 |\\n| 150 | ~105 | ~45 | ~45 | ~45 |\\n| 370 | ~105 | ~45 | ~45 | ~45 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-HF-treated Si stabilizes near ~45°.\\n-SiO₂ and Ti follow nearly identical trajectories to ~45°.\\n-ODPA/Ti remains significantly higher than the others.\\n-The separation between ODPA/Ti and the remaining substrates persists over subsequent cycles.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A fast, stable WCA response reduces uncertainty in downstream wet processing, adhesion, or interfacial layer formation. If most substrates quickly reach a consistent wetting state, process tuning becomes simpler. The persistent exception (ODPA/Ti) also highlights where selectivity might be achievable.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The curves indicate those substrates still transition rapidly to ~45° and then remain stable, even with the modified purge scheme. That suggests the early surface change is robust to this process adjustment once the low-WCA state is reached. The main visible effect is that the long-cycle behavior remains steady rather than drifting.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ODPA/Ti.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_42_fig_6.jpg","caption":"Fig. 6 (a) $t_{\\mathrm{phy}} - t_{\\mathrm{ox}}$ plot, (b) $J - V$ plot, and (c) $J - t_{\\mathrm{ox}}$ plot of the MIM capacitor with $20 \\mathrm{nm}$ -thick $\\mathrm{TiO_2}$ deposited by (black) the conventional sequence and (red) the $\\mathrm{H}_2\\mathrm{O}$ -added sequence with a $\\mathrm{H}_2\\mathrm{O}$ feeding time of $10 \\mathrm{s}$ .","id":"train/atomic-layer-deposition/simulation-usecase/42/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/42/fig_6","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/Yeonchoo Cho et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":661,"height":200,"image_format":"jpeg","image_sha256":"20de0fccead6229318554edc62eb7449917deffa1a07866c162814606cf28ae8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":12,"width":199,"height":189},{"panel_id":"b","x":227,"y":6,"width":215,"height":195},{"panel_id":"c","x":453,"y":11,"width":207,"height":189}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A line chart showing the relationship between t_{hyb} [nm] and l_{0} [µm], comparing the effect of the conventional vs. the H2O-added sequence.\"},{\"panel_id\":\"b\",\"text\":\"A scatter plot displaying leakage current density against applied voltage, comparing the effect of the conventional vs. the H2O-added sequence.\"},{\"panel_id\":\"c\",\"text\":\"A scatter plot showing leakage current density at -0.8 V against t_{hyb} [nm], comparing the effect of the conventional vs. the H2O-added sequence.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| t_{hyb} [nm] | l_{0} [µm] Conventional | l_{0} [µm] H2O-added |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 5 | 0.2 | 0.2 |\\n| 10 | 0.4 | 0.4 |\\n| 15 | 0.6 | 0.6 |\\n| 20 | 0.8 | 0.8 |\\n| 25 | 1 | 1 |\"},{\"panel_id\":\"b\",\"text\":\"| Applied Voltage [V] | Leakage current density [A/cm^{2}] Conventional | Leakage current density [A/cm^{2}] H2O-added |\\n|---|---|---|\\n|-1.5 | 10^{-6} | 10^{-7} |\\n|-1.0 | 10^{-7} | 10^{-8} |\\n|-0.5 | 10^{-8} | 10^{-8} |\\n| 0.0 | 10^{-9} | 10^{-8} |\\n| 0.5 | 10^{-6} | 10^{-6} |\\n| 1.0 | 10^{-4} | 10^{-4} |\\n| 1.5 | 10^{-3} | 10^{-3} |\"},{\"panel_id\":\"c\",\"text\":\"| t_{hyb} [nm] | Leakage current density @ -0.8 V [A/cm^{2}] |\\n|---|---|\\n| 0.2 | 10^{-7} |\\n| 0.4 | 10^{-6} |\\n| 0.6 | 10^{-5} |\\n| 0.8 | 10^{-4} |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"93.5.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"97.8.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The y-intercept reflects the interfacial properties between the TiO₂ film and the top/bottom electrodes, implying that the additional H2O step does not induce any change at the interface of the TE or the BE.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both the J–V curves and leakage current trends show that the TiO₂ films produced by the conventional and H₂O-enhanced processes behave nearly identically, indicating that their bulk electrical and interfacial properties are the same. The similar dielectric constants, unchanged y-intercepts, and overlapping leakage current behavior suggest that adding an H₂O feeding step does not negatively impact film quality or electrode interfaces, and that both films exhibit comparable crystallinity consistent with the rutile TiO₂ phase.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_5_9e00b88115926e47232a0241f1247464af11d2b941b12f93e9ea7d022654029e.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/5/9e00b88115926e47232a0241f1247464af11d2b941b12f93e9ea7d022654029e","sample_id":"atomic-layer-deposition/simulation-usecase/5/9e00b88115926e47232a0241f1247464af11d2b941b12f93e9ea7d022654029e","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/9e00b88115926e47232a0241f1247464af11d2b941b12f93e9ea7d022654029e.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/9e00b88115926e47232a0241f1247464af11d2b941b12f93e9ea7d022654029e.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"not_found"},"width":511,"height":809,"image_format":"jpeg","image_sha256":"870798f14a2da06899d656a16d3ec6fa9f9b1117bea4b5df3f620b8f1a2228ef","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":14,"y":0,"width":497,"height":375},{"panel_id":"b","x":8,"y":393,"width":505,"height":413}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the thickness of ZnO as a function of ALD cycles at different temperatures over silicon and amorphous silicon substrates.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the selectivity of a process as a function of ALD cycles at two different temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD Cycles | 100°C on SiO₂ (nm) | 250°C on SiO₂ (nm) | 100°C on a-Si:H (nm) | 250°C on a-Si:H (nm) |\\n|------------|----------------------|----------------------|------------------------|------------------------|\\n| 0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 20 | 2.0 | 3.0 | 0.0 | 0.0 |\\n| 40 | 4.0 | 6.0 | 0.0 | 0.0 |\\n| 60 | 6.0 | 9.0 | 0.0 | 0.0 |\\n| 80 | 8.0 | 12.0 | 0.5 | 0.0 |\\n| 100 | 10.0 | — | 1.5 | 0.2 |\\n| 120 | — | — | 3.0 | 0.5 |\\n| 160 | — | — | 6.0 | 1.0 |\\n| 200 | — | — | 8.0 | 2.0 |\"},{\"panel_id\":\"b\",\"text\":\"| ALD Cycles | Selectivity @ 100°C | Selectivity @ 250°C |\\n|------------|----------------------|----------------------|\\n| 0 | 1.00 | 1.00 |\\n| 40 | 0.95 | 1.00 |\\n| 80 | 0.85 | 1.00 |\\n| 120 | 0.65 | 0.95 |\\n| 160 | 0.45 | 0.85 |\\n| 200 | 0.30 | 0.75 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For a deposition temperature of 100 °C, the selectivity decreases from 1.0 to 0.96 at 80 ALD cycles. By further increasing the number of cycles, the selectivity drops to 0.85 (at 100 cycles), which corresponds to a ZnO thickness of ∼1 nm on the NGA. For a deposition temperature of 250 °C, the selectivity, S, remains 1 until 110 cycles and then decreases to 0.95 at 140 ALD cycles.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The selectivity is abruptly lost at 350 °C.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A larger nucleation delay is observed for deposition at 250 °C with a-Si:H substrate\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_5_figure_2.jpg","caption":"Figure 2. $\\mathrm{ZnO}$ film thickness measured by in situ SE as a function of the number of ALD cycles performed on substrates with a native $\\mathrm{SiO}_2$ surface (closed squares) and with a $\\sim 10 \\mathrm{nm}$ thick a-Si/H layer (open squares). On $\\mathrm{SiO}_2$ , the $\\mathrm{ZnO}$ film thickness increases linearly after a short delay of a few cycles, whereas on a-Si/H, the $\\mathrm{ZnO}$ deposition experiences a relatively long nucleation delay. Only after 80 ALD cycles, the growth also starts on the a-Si/H and enters a linear regime at about 120 cycles. Both depositions were carried out at $100^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/simulation-usecase/5/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/5/figure_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":431,"height":361,"image_format":"jpeg","image_sha256":"9358e6304379746b7f1d2c8f54fe3acc53e2d8c2412a5ebe0a231eb097cdaf19","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":430,"height":359}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the thickness of ZnO deposited on SiO2 (closed squared) and a-Si:H (open squares) substrates as a function of ALD cycles. The thickness increases linearly with increasing cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD Cycles | ZnO Thickness on SiO₂ (nm) | ZnO Thickness on a-Si:H (nm) |\\n|------------|-----------------------------|--------------------------------|\\n| 0 | 0.0 | 0.0 |\\n| 10 | 2.0 | 0.0 |\\n| 20 | 4.0 | 0.0 |\\n| 30 | 6.0 | 0.0 |\\n| 40 | 8.0 | 0.2 |\\n| 50 | 10.0 | 0.5 |\\n| 60 | 12.0 | 1.0 |\\n| 70 | 14.0 | 2.0 |\\n| 80 | 16.0 | 3.0 |\\n| 90 | — | 4.0 |\\n| 100 | — | 5.0 |\\n| 110 | — | 6.0 |\\n| 120 | — | 7.0 |\\n| 130 | — | 8.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"On SiO2, the ZnO film thickness increases linearly after a short delay of a few cycles, whereas on a-Si/H, the ZnO deposition experiences a relatively long nucleation delay. Only after 80 ALD cycles, the growth also starts on the a-Si/H and enters a linear regime at about 120 cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both depositions were carried out at 100 °C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Area-selective ALD of ZnO can be obtained by exploiting the difference in nucleation delays on the two surfaces. Furthermore, the nucleation curves suggest a selectivity window (expressed as the number of ALD cycles for which no deposition is obtained on the a-Si/H) of about 80 ALD cycles before deposition occurs on both surfaces and the selectivity is lost. The key reason for the difference in nucleation delay lies in the surface chemistry because dissimilar surface groups have distinct kinetic barriers toward various thermodynamically favorable end states.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_5_figure_6.jpg","caption":"Figure 6. Selectivity for $80~\\mathrm{ZnO}$ ALD cycles as a function of the deposition temperature. The insets show the top-view SEM images of patterns realized using the same EBID parameters and number of ALD cycles, but different $\\mathrm{ZnO}$ growth temperatures (100, 150, and $250^{\\circ}\\mathrm{C}$ ); scale bars are $500~\\mathrm{nm}$ . The horizontal dotted line at $S = 1$ indicates perfect selectivity.","id":"train/atomic-layer-deposition/simulation-usecase/5/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/5/figure_6","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":556,"height":461,"image_format":"jpeg","image_sha256":"f50b66641f2a179ee0915cd091af838eccaf9caf2962e830ffecd844c1839f08","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":5,"y":308,"width":551,"height":152},{"panel_id":"a","x":2,"y":2,"width":552,"height":306}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot shows selectivity versus deposition temperature where selectivity increases with increasing deposition temperature.\"},{\"panel_id\":\"b\",\"text\":\"SEM Microscopy images of samples deposited at different temperatures demonstrating selectivity\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition temperature (°C) | Selectivity |\\n|---|---|\\n| 100 | 0.82 |\\n| 150 | 0.96 |\\n| 200 | 0.99 |\\n| 250 | 1.00 |\"},{\"panel_id\":\"b\",\"text\":\"| 100 °C | 150 °C | 250 °C |\\n|---|---|---|\\n| ![](100°C_image.png) | ![](150°C_image.png) | ![](250°C_image.png) |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"the selectivity was calculated using the ZnO surface coverage in and outside the patterned area, as measured by top-view SEM.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The SEM-measured selectivity data confirmed the results obtained using SE: the selectivity increases with the deposition temperature up to 250 °C\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The selectivity increases as follows\\na. 0.83 at 100 °C\\nb. 0.97 at 150 °C\\nc. 0.99 at 200 °C\\nd. 0.99 at 250 °C\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_2.jpg","caption":"Figure 2. Deposition rate versus exposure of $\\mathrm{SiO}_2$ (red diamonds) and $\\mathrm{Si}_3\\mathrm{N}_4$ (green circles) films deposited from chloro-silane precursors by ALD at $450^{\\circ}\\mathrm{C}$ with less than $2\\%$ absolute variation on per cycle deposition rate.","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":594,"height":461,"image_format":"jpeg","image_sha256":"463616b24ad45d70701af9a4941c96b51fe4f54e8c584aa1d2ae08648402517e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":592,"height":456}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the per cycle deposition rate of SiO2 and Si3N4 as a function of exposure time in Torr·s.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Exposure (Torr·s) | Per cycle Dep. Rate (Å) SiO₂ | Per cycle Dep. Rate (Å) Si₃N₄ |\\n|--------------------|-------------------------------|---------------------------------|\\n| 0.02 | 0.4 | - |\\n| 0.05 | 0.8 | - |\\n| 0.10 | 1.0 | - |\\n| 1.0 | - | 0.5 |\\n| 3.0 | - | 0.9 |\\n| 10.0 | - | 1.1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Films deposited from chloro-silane precursors by ALD at 450 °C with less than 2% absolute variation on per cycle deposition rate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure compares the relative reactivity for simple chloro-silane precursors (e.g., DCS,HCDS, etc.)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Precursor exposure was varied by changing the exposure time, the exposure partial pressure, or both. Deposition rate was determined by measurement of the thickness after deposition and dividing by the number of ALD cycles performed. The very long precursor exposure for deposition of silicon nitride makes this process economically unviable, due to both the excessive throughput time per film deposited and the unacceptably high volume of silicon precursors consumed.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_6_figure_2.jpg","caption":"Figure 2. Duo-linear plot of $\\mathrm{TiO_2}$ film thickness versus the number of cycles and a silicon reference (reprinted with permission from [6]).","id":"train/atomic-layer-deposition/simulation-usecase/6/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/6/figure_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":695,"height":472,"image_format":"jpeg","image_sha256":"98c70cc45ed040ffd673f42915a6dead412f09ab62bc934c719fa8d9184c3bcc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":694,"height":470}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the thickness of TiO2 ALD deposited on PMMA and silicon substrates as a function of the number of cycles, showing cycle dependent GPCs.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of cycles | Thickness (Å) on PMMA |Thickness (Å) on silicon |\\n|------------------|---------------|---------------|\\n| 0 | 0 |0|\\n| 100 | 150 |75|\\n| 150 | 250 |100|\\n| 200 | 300 |120|\\n| 250 | 350 |150|\\n| 300 | 360 |160|\\n| 400 | 400 |200|\\n| 500 | 450 |250|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that PMMA as a substrate enables enhanced growth, whereas TiO2 growth on TiO2 does not enable this.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"SiO2 looks more like TiO2 in structure than PMMA does so it is likely that the growth on SiO2 looks more like the growth on TiO2 than on PMMA.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After these number of cycles the substrate does not have an influence on the growth anymore and just the TiO2 acts as a starting substrate. As this is the same for both cases it is likely that the same GPC is acquired.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The GPC is 0.74 angstrom/cycle.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_11.jpg","caption":"Figure 11. Simulated GPC data, estimated from both the thickness of the simulated thin film and from the deposited mass, compared to the growth rate reported in ref 26. The GPC estimated from the average mass includes the error bars, obtained as a standard deviation from series of simulations.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_11","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_11","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":614,"height":497,"image_format":"jpeg","image_sha256":"cf2894806b97d0c0f1b7ca4aff2aa75c4302585331c8cb2b7eca4d4c2ffc0724","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":613,"height":492}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between temperature and growth-per-cycle in angstroms. Data points represent measurements from Yousfi et al., kMC (average mass), and kMC (average thickness). The trend shows increasing GPC with increasing temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature / °C | Growth-per-cycle / angstrom Yousfi|Growth-per-cycle / angstrom Model|\\n|---|---|---|\\n| 0 | 0.0 |0.0 |\\n| 25 | 0.0 |0.0 |\\n| 50 | 0.25 |1.3|\\n| 75 | 0.6|2.2 |\\n| 100 |1.3| 2.6 |\\n| 125 | 2.0|2.6 |\\n| 150 | 2.1|2.6 |\\n| 175 | 2.1|2.6 |\\n| 200 | 2.0|- |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No they do not overlap in max GPC, however, the trend is similar. In addition, both methods result in an optimal deposition temperature of about 175 degrees celcius.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For too high temperatures, there can be desorption of surface species, this can result in lower GPC.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"That the temperature of the process is always higher than the bubbler temperature, such that condensation does not occur.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_12.jpg","caption":"Figure 12. GPC as a function of temperature in the case where the barriers for the second ligand elimination reaction (LE2) have been increased by $0.10\\mathrm{eV}$ . The elimination of the MEZ from the surface is clearly the crucial step in the deposition process. Increasing the barrier shifts the observed behavior to higher temperature as the ligand-elimination reaction can occur only at elevated temperatures.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_12","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":613,"height":500,"image_format":"jpeg","image_sha256":"4a25a24c72f9493d94b95848ba38212b35d60ee654b88ee6897d47ad32d1b117","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":608,"height":497}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between temperature and growth-per-cycle in angstroms. This is shown for experimental data, a kMC model, and an additional model with different input variables.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature / °C | Growth-per-cycle / angstrom Yousfi|Growth-per-cycle / angstrom Model|Growth-per-cycle / angstrom Model LE2 +0.1 eV|\\n|---|---|---|---|\\n| 0 | 0.0 |0.0 |0.0 |\\n| 25 | 0.0 |0.0 |0.0 |\\n| 50 | 0.25 |1.3|0.0 |\\n| 75 | 0.6|2.2 |0.6|\\n| 100 |1.3| 2.6 |1.8|\\n| 125 | 2.0|2.6 |2.4|\\n| 150 | 2.1|2.6 |2.5|\\n| 175 | 2.1|2.6 |2.7|\\n| 200 | 2.0|- |-|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, this is especially the case for the lower temperatures where there seems to be a short delay or thresshold temperature.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This needs to be overcome by added energy via increased temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2.3 angstrom per cycle\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This is not yet visible in the graph for this temperature range, but if the model behaves according to the actual physical situation this should be the case.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_13.jpg","caption":"Figure 13. Fraction of persisting ligands as a function of temperature in the simulation. Experimental data, obtained from ref 12, are measured for low and high water exposures. Low and high water exposures correspond to $10^{4}$ and $10^{7} \\mathrm{~L}$ , respectively.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_13","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_13","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":620,"height":514,"image_format":"jpeg","image_sha256":"5607376bc51e7f7ae661ad7e3de4848aab024b58874a7ed58415c791967f5fdb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":619,"height":516}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the fraction of ethyl-ligands persisting at various temperatures. The simulated data points are represented by red squares, while the experimental data points are shown by gray triangles. The graph shows the fraction of ethyl-ligands persisting decreasing with increasing temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature / °C | Fraction of ethylligands persisting Simulated |Fraction of ethylligands persisting Long exposure |Fraction of ethylligands persisting short exposure |\\n|---|---|---|---|\\n| 25 | 0.83 |-|-|\\n| 50 | 0.6 |-|-|\\n| 75 | 0.5 |-|-|\\n| 100 | 0.45 |0.3|0.75|\\n| 120 | 0.45 |-|-|\\n| 150 | 0.45 |0.15|0.55|\\n| 180 | 0.45 |-|-|\\n| 200 | - |0.05|0.12|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both for long and short water exposures the experimental data does not overlap with the simulated data indicating that the model is incomplete.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Water is supposed to react with the ligands and remove them. If the exposure is shorter, it could be that there are less ligand removing reactions.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The fraction is close to one, this means that the ligands are not removed and therefore also not replaced with reactive surface sites to which new precursor molecules can adsorb. This means it is unlikely there will be any substantial growth at this temperature.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The layers grown with ALD are usually used in devices where carbon from ligands can degrade the material properties making them incompatible with the application of interest.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_14.jpg","caption":"Figure 14. W ALE using $\\mathrm{O}_2 / \\mathrm{O}_2$ , $\\mathrm{BCl}_3$ , and HF as reactants at $207^{\\circ}\\mathrm{C}$ . (a) $\\mathrm{WO}_3$ thickness increases after $\\mathrm{O}_2 / \\mathrm{O}_3$ exposure and decreases after $\\mathrm{BCl}_3 / \\mathrm{HF}$ exposure. (b) W etching occurs with an etch rate of $2.44\\mathrm{\\AA}/$ cycle. Reproduced with permission from ref 32. Copyright 2017 American Chemical Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_14","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_14","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":653,"height":873,"image_format":"jpeg","image_sha256":"b9c9f373c395dfe158457970207748a2347e9f94ee84de6a9bb55b5fa67b53f5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":1,"y":397,"width":642,"height":482},{"panel_id":"a","x":4,"y":0,"width":643,"height":417}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the thickness of WO₃ after exposure to O₂/O₃ and BCl₃/HF as a function of the number of half-cycles.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the thickness of W as a function of the number of half-cycles at 207 °C, with O2/O3, BCl3 and HF exposure. The figure shows an etch rate of 2.44 Å/cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Half-Cycles | WO₃ Thickness (Å) After O₂/O₃ | WO₃ Thickness (Å) After BCl₃/HF |\\n| --- | --- | --- |\\n| 0 | 38 | 27 |\\n| 10 | 43 | 35 |\\n| 20 | 37 | 30 |\\n| 30 | 33 | 25 |\\n| 40 | 30 | 23 |\\n| 50 | 26 | 20 |\\n| 60 | 26 | 17 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Half-Cycles | W Thickness (Å) |\\n|---|---|\\n| 0 | 230 |\\n| 10 | 215 |\\n| 20 | 200 |\\n| 30 | 190 |\\n| 40 | 175 |\\n| 50 | 170 |\\n| 60 | 155 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The experiment was performed at 207 °C with the following exposure: 3150 mTorr s of O2/O3, 329 mTorr s of BCl3, and 2800 mTorr s of HF.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The W thickness decreases as the number of half-cycles increases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seenin the figure, the etch per cycle is 2.44 Å/cycle.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thickness of the WO3 increases after exposure to O2/O3 because it can oxidize the surface. However, it decreases after exposure to BCl3/HF.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_5.jpg","caption":"Figure 5. Film thickness versus number of ALE cycles for various materials using HF as fluorine reactant and (a) TMA or (b) DMAF as metal precursor for ligand-exchange. Reproduced with permission from ref 23. Copyright 2016 American Chemical Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":658,"height":1072,"image_format":"jpeg","image_sha256":"4b524612e6fdd367954e4901d6b187e0eb9a9ce7c4819377844aab951c454e7b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":49,"y":539,"width":604,"height":506},{"panel_id":"a","x":17,"y":5,"width":630,"height":526}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows how the film thickness of various materials (TiN, ZrO₂, SiO₂, Si₃N₄, HfO₂, Al₂O₃) changes over cycles at 300°C using TMA.\"},{\"panel_id\":\"b\",\"text\":\"The chart shows how the film thickness of various materials (TiN, SiO₂, Si₃N₄, ZrO₂, HfO₂, Al₂O₃) changes over cycles at 250°C using DMAC.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | TiN | ZrO₂ | SiO₂ | Si₃N₄ | HfO₂ | Al₂O₃ |\\n|---|---|---|---|---|---|---|\\n| 0 | 68 | 50 | 48 | 40 | 55 | 44 |\\n| 50 | - | 48 | - | - | 50 | 20 |\\n| 100 | - | 53 | - | - | 43 | 0 |\\n| 200 | 70 | 48 | 43 | 42 | 37 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Cycles | TiN | SiO₂ | Si₃N₄ | ZrO₂ | HfO₂ | Al₂O₃ |\\n|---|---|---|---|---|---|---|\\n| 0 | 70 | 50 | 40 | 50 | 50 | 48 |\\n| 25 | 70 | 51 | 40 | 22 | 40 | 40 |\\n| 50 | 70 | 50 | 40 | 5 | 20 | 38 |\\n| 100 | 70 | 50 | 40 | 0 | 0 | 18 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Only Al2O3, HfO2, and ZrO2 exhibit etching behavior. For the other materials, the film thickness remains constante over the number of cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN has the highest film thickness values.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TMA ALE cycle was performed at 300 °C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the figure, Al2O3 exhibit the highest etch rates using TMA as reactant.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_6.jpg","caption":"Figure 6. Thickness change versus number of ALE cycles for crystalline and amorphous $\\mathrm{HfO}_2$ using HF and $\\mathrm{TiCl}_4$ as reactants. Reproduced with permission from ref 29. Copyright 2020 American Vacuum Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_6","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":658,"height":500,"image_format":"jpeg","image_sha256":"7ffdad84762b9db9d15b5ce4b9f3435a62cb9b4c134537ccda6314668c9fd3c6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":22,"y":2,"width":629,"height":488}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the thickness change of crystalline and amorphous HfO₂ as a function of the number of ALE cycles at 250°C using HF/TiCl₄. The etch rate is 0.02 Å/cycle for the crystalline sample and 0.35 Å/cycle for the amorphous.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of ALE Cycles | crystalline | amorphous |\\n| --- | --- | --- |\\n| 0 | 0 | 0 |\\n| 50 | 0 | -18 |\\n| 100 | 0 | -30 |\\n| 150 | -2 | -45 |\\n| 200 | -3 | -80 |\\n| 300 | -5 | -95 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 250 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In both cases the film thickness decreases, but the change is more significant for the amorphous HfO2 film.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF and TiCl4 were used as reactants.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch rate is 0.02 Å/cycle for the crystalline film and for the amorphous film: 0.36 Å/\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_7.jpg","caption":"Figure 7. Temperature dependence of $\\mathrm{Al}_2\\mathrm{O}_3$ ALE using $\\mathrm{SF}_4$ and $\\mathrm{Sn(acac)}_2$ . Etch rate increases from $0.04 \\mathrm{Å / cycle}$ at $150^{\\circ}\\mathrm{C}$ to $0.25 \\mathrm{Å / cycle}$ at $225^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/17/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_7","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":672,"height":547,"image_format":"jpeg","image_sha256":"db4540cfe0dc3c8695a08295734287de8b6efe2e0e6214f581b6b6676edc8843","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":672,"height":547}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents the film thickness of Al₂O₃ as a function of the number of atomic layer etching (ALE) cycles at four different temperatures: 150 °C, 175 °C, 200 °C, and 225 °C. Each dataset shows a monotonic decrease in thickness with increasing cycles, but the rate of etching significantly depends on temperature. At 150 °C, the change is minimal, indicating very slow etching, while the steepest decrease is observed at 200 °C and 225 °C, demonstrating a higher etch rate. The linearity in most cases suggests a consistent per-cycle removal, particularly at elevated temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | Thickness at 150 °C (Å) | Thickness at 175 °C (Å) | Thickness at 200 °C (Å) | Thickness at 225 °C (Å) |\\n|------------------|--------------------------|--------------------------|--------------------------|--------------------------|\\n| 0 | 190 | 190 | 190 | 190 |\\n| 50 | 189 | 187 | 182 | 180 |\\n| 100 | 188 | 184 | 174 | 170 |\\n| 200 | 187 | 179 | 160 | 155 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Al₂O₃ thickness consistently decreases with increasing ALE cycles at all temperatures, but the rate of this decrease varies. At 150 °C, the reduction in thickness is minimal, indicating limited etching. In contrast, at 200 °C and 225 °C, the film is etched more aggressively, with a sharp decline in thickness over 200 cycles. This suggests that higher temperatures enhance the etch efficiency, likely by improving precursor reactivity or facilitating the removal of reaction byproducts.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"150 °C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Increased SF₄ and Sn(acac)₂ reactivity at higher temperatures, enhanced byproduct desorption, improved surface diffusion.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_2_figure_10.jpg","caption":"Figure 10. Review of literature data of physical sputter rates reported for Si versus the square-root of Ar ion energy up to energies of $400\\mathrm{eV}^{95,118 - 132}$ along with SRIM simulation results. The threshold for physical sputtering of Si is $\\approx 20\\mathrm{eV}$ . The large scatter with regard to the threshold energy of physical sputtering for Si shows the difficulty of controlling experimental conditions.","id":"train/atomic-layer-etching/experimental-usecase/2/figure_10","sample_id":"atomic-layer-etching/experimental-usecase/2/figure_10","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/Atomic Layer Etching at the Tipping Point An Overview.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":575,"height":603,"image_format":"jpeg","image_sha256":"f97b84f2943eb3ef0be66fcfe4cd282f2f0c34854630766a1e82df7125df6729","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":575,"height":603}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents a comparative scatter plot of experimentally reported physical sputter yields of silicon (Si) as a function of the square root of Ar⁺ ion energy, compiled from multiple literature sources. The wide dispersion of data points highlights strong experiment-to-experiment variability, particularly near the sputtering threshold. A SRIM simulation curve is included as a reference, indicating an approximate threshold energy of ~20 eV for Si sputtering. The figure emphasizes the inherent difficulty in achieving precise control in physical sputtering processes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion Energy [eV] | Square Root of Ion Energy [eV^1/2] | Sputter Yield [Si/Ar^+] |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 25 | 5 | 0.05 |\\n| 100 | 10 | 0.1 |\\n| 225 | 15 | 0.2 |\\n| 400 | 20 | 0.3 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This comparison highlights the sensitivity of physical sputtering to ion energy, especially near the threshold region. In ALE, precise control of ion energy is essential to remain within the ALE window, avoiding uncontrolled sputtering. The observed scatter emphasizes the need for carefully tuned plasma and ion conditions to achieve repeatable, layer-by-layer etching.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~20 eV, as suggested by both experimental data and SRIM simulations.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Higher ion energies generally lead to increased physical sputtering of Si.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Variations in ion energy calibration, Differences in surface condition and crystallinity, Experimental setup and measurement uncertainty, Ion incidence angle and beam conditions\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_2_figure_11.jpg","caption":"Figure 11. Review of literature data of physical sputter rates for $\\mathrm{SiO_2}$ versus the square-root of Ar ion energy up to energies of $400\\mathrm{eV}^{95,122,124,128,133 - 137}$ The threshold for physical sputtering of $\\mathrm{SiO_2}$ is $\\approx 45\\mathrm{eV}$ .","id":"train/atomic-layer-etching/experimental-usecase/2/figure_11","sample_id":"atomic-layer-etching/experimental-usecase/2/figure_11","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/Atomic Layer Etching at the Tipping Point An Overview.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":572,"height":600,"image_format":"jpeg","image_sha256":"af1e24a90182f1b29ed4f1ee1ade03091899201c0f4f4b905dde823f3aee6061","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":572,"height":600}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure compiles experimental literature data and SRIM simulation results showing the physical sputter yield of SiO₂ as a function of the square root of Ar⁺ ion energy. The data reveal a clear sputtering threshold around ~45 eV, above which the sputter yield increases approximately linearly with ion energy. The wide scatter among experimental points highlights strong sensitivity to experimental conditions such as surface state, angle of incidence, and ion flux, emphasizing challenges in precise sputter control at low energies.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion Energy [eV] | Sputter Yield [SiO₂/Ar⁺] |\\n|---|---|\\n| 0 | 0.0 |\\n| 5 | 0.0 |\\n| 10 | 0.0 |\\n| 15 | 0.0 |\\n| 20 | 0.0 |\\n| 25 | 0.0 |\\n| 30 | 0.0 |\\n| 35 | 0.0 |\\n| 40 | 0.0 |\\n| 45 | 0.0 |\\n| 50 | 0.0 |\\n| 55 | 0.0 |\\n| 60 | 0.0 |\\n| 65 | 0.0 |\\n| 70 | 0.0 |\\n| 75 | 0.0 |\\n| 80 | 0.0 |\\n| 85 | 0.0 |\\n| 90 | 0.0 |\\n| 95 | 0.0 |\\n| 100 | 0.0 |\\n| 105 | 0.0 |\\n| 110 | 0.0 |\\n| 115 | 0.0 |\\n| 120 | 0.0 |\\n| 125 | 0.0 |\\n| 130 | 0.0 |\\n| 135 | 0.0 |\\n| 140 | 0.0 |\\n| 145 | 0.0 |\\n| 150 | 0.0 |\\n| 155 | 0.0 |\\n| 160 | 0.0 |\\n| 165 | 0.0 |\\n| 170 | 0.0 |\\n| 175 | 0.0 |\\n| 180 | 0.0 |\\n| 185 | 0.0 |\\n| 190 | 0.0 |\\n| 195 | 0.0 |\\n| 200 | 0.0 |\\n| 205 | 0.0 |\\n| 210 | 0.0 |\\n| 215 | 0.0 |\\n| 220 | 0.0 |\\n| 225 | 0.0 |\\n| 230 | 0.0 |\\n| 235 | 0.0 |\\n| 240 | 0.0 |\\n| 245 | 0.0 |\\n| 250 | 0.0 |\\n| 255 | 0.0 |\\n| 260 | 0.0 |\\n| 265 | 0.0 |\\n| 270 | 0.0 |\\n| 275 | 0.0 |\\n| 280 | 0.0 |\\n| 285 | 0.0 |\\n| 290 | 0.0 |\\n| 295 | 0.0 |\\n| 300 | 0.0 |\\n| 305 | 0.0 |\\n| 310 | 0.0 |\\n| 315 | 0.0 |\\n| 320 | 0.0 |\\n| 325 | 0.0 |\\n| 330 | 0.0 |\\n| 335 | 0.0 |\\n| 340 | 0.0 |\\n| 345 | 0.0 |\\n| 350 | 0.0 |\\n| 355 | 0.0 |\\n| 360 | 0.0 |\\n| 365 | 0.0 |\\n| 370 | 0.0 |\\n| 375 | 0.0 |\\n| 380 | 0.0 |\\n| 385 | 0.0 |\\n| 390 | 0.0 |\\n| 395 | 0.0 |\\n| 400 | 0.0 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding the sputtering threshold and energy-dependent yield is critical for ALE because it defines the narrow ion-energy window where material removal is controllable and self-limiting. Operating below the physical sputtering regime enables selective, damage-minimized etching, while exceeding it risks uncontrolled material loss and reduced process selectivity.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The sputter yield of SiO₂ increases approximately linearly with the square root of ion energy once the sputtering threshold is exceeded.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The sputter yield remains near zero at low ion energies and increases only after exceeding a threshold of approximately 45 eV.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Surface condition of SiO₂, Ion incidence angle, Ion energy distribution, Experimental setup variations, Measurement methodology differences\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_22_figure_5.jpg","caption":"Figure 5. Thickness measurements were acquired after etching of amorphous as-deposited ALD $\\mathrm{MoS}_2$ films on $\\mathrm{SiO}_2$ coupons at $200^{\\circ}\\mathrm{C}$ . Both SE and XRR thickness measurements show a linear decrease in film thickness. A linear fit of the data produces an etching rate of 0.05 nm/cycle for amorphous $\\mathrm{MoS}_2$ .","id":"train/atomic-layer-etching/experimental-usecase/22/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/22/figure_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/Thermal Atomic Layer Etching of MoS2 Using MoF6 and H2O.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":483,"height":389,"image_format":"jpeg","image_sha256":"5051dfebc7e58adcabf584de46f39386c987bd7e00dd2c11f7a3988ff58373a5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":483,"height":389}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Panel (a) shows no change in thickness when only Hhfac is used, even after 20 pulses.\"},{\"panel_id\":\"b\",\"text\":\"Similarly, panel (b) indicates no measurable thickness reduction with H₂ plasma alone.\"},{\"panel_id\":\"c\",\"text\":\"In contrast, panel (c) demonstrates a steady linear decrease in film thickness when both Hhfac and H₂ plasma are applied in combination, highlighting the synergistic effect of this treatment for etching. These results suggest that neither precursor nor plasma alone is sufficient to etch the surface, but their combination results in controlled material removal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of pulses/cycles | Thickness change (nm) |\\n|--------------------------|------------------------|\\n| 0 | 0 |\\n| 5 | 0 |\\n| 10 | 0 |\\n| 15 | 0 |\\n| 20 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of pulses/cycles | Thickness change (nm) |\\n|--------------------------|------------------------|\\n| 0 | 0 |\\n| 5 | 0 |\\n| 10 | 0 |\\n| 15 | 0 |\\n| 20 | 0 |\"},{\"panel_id\":\"c\",\"text\":\"| Number of pulses/cycles | Thickness change (nm) |\\n|--------------------------|------------------------|\\n| 0 | 0 |\\n| 5 | -0.5 |\\n| 10 | -1.0 |\\n| 15 | -1.5 |\\n| 20 | -2.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thickness decreases by approximately 2.0 nm after 20 cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"(a): Hhfac, no thickness change, (b): H₂ plasma, no thickness change , (c): Hhfac + H₂ plasma, linear decrease in thickness\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In atomic layer etching, precursor adsorption alone often does not result in material removal due to the lack of activation energy. Similarly, plasma exposure alone may not modify the surface sufficiently for etching to occur. The combination of Hhfac and H₂ plasma enables a two-step mechanism where Hhfac modifies the surface chemically, and the H₂ plasma provides energetic species to drive desorption or reaction of surface-bound fragments.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_4.jpg","caption":"Figure 4. Expansion showing thickness of $\\mathrm{ZnS}$ film during the first 5 $\\mathrm{ZnS}$ ALE cycles in Figure 3.","id":"train/atomic-layer-etching/experimental-usecase/23/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_4","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":670,"height":539,"image_format":"jpeg","image_sha256":"5e0df4a3a6d2e6e820904418c60ac7e577bde4bd21ccd2de756ab7edcede1e35","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":2,"width":666,"height":536}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows an expanded view of the ZnS thickness evolution over the first few ALE cycles. It plots the ZnS film thickness as a function of ZnS ALE cycle number using HF and TMA as reactants at 300 °C, focusing only on the 0–5 cycle region. The initial ZnS films used for ALE were deposited by ALD at 100 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALE Cycles | ZnS Thickness (Å) | Stage | \\n|------------|--------------------|-----------------------------|\\n| 0 | 203 | Initial ZnS thickness | \\n| 0 | - | After HF Exposure | \\n| 0 | - | After TMA Exposure | \\n| 0.5 | - | Initial ZnS thickness | \\n| 0.5 | 203.52 | After HF Exposure | \\n| 0.5 | - | After TMA Exposure | \\n| 1 | - | Initial ZnS thickness | \\n| 1 | - | After HF Exposure | \\n| 1 | 203.62 | After TMA Exposure | \\n| 1.5 | - | Initial ZnS thickness | \\n| 1.5 | 201.9 | After HF Exposure | \\n| 1.5 | - | After TMA Exposure | \\n| 2 | - | Initial ZnS thickness | \\n| 2 | - | After HF Exposure | \\n| 2 | 201.58 | After TMA Exposure | \\n| 2.5 | - | Initial ZnS thickness | \\n| 2.5 | 200 | After HF Exposure | \\n| 2.5 | - | After TMA Exposure | \\n| 3 | - | Initial ZnS thickness | \\n| 3 | - | After HF Exposure | \\n| 3 | 199.4 | After TMA Exposure | \\n| 3.5 | - | Initial ZnS thickness | \\n| 3.5 | 198 | After HF Exposure | \\n| 3.5 | - | After TMA Exposure | \\n| 4 | - | Initial ZnS thickness | \\n| 4 | - | After HF Exposure | \\n| 4 | 197.25 | After TMA Exposure | \\n| 4.5 | - | Initial ZnS thickness | \\n| 4.5 | 196 | After HF Exposure | \\n| 4.5 | - | After TMA Exposure | \\n| 5 | - | Initial ZnS thickness | \\n| 5 | - | After HF Exposure | \\n| 5 | 195.1 | After TMA Exposure |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1) HF Exposure: Fluorinates/modifies the ZnS surface.\\n\\n2) Thickness Measurement.\\n\\n3) TMA Exposure: Removes the modified layer.\\n\\n4) Thickness Measurement. Measuring after each step verifies the self-limiting nature of each half-reaction and quantifies the individual contribution to the total etch per cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"HF/TMA ALE: Pro: Chemically selective to ZnS; SiO₂ is resistant to HF under these conditions.\\n\\nThermal Decomposition: Con: Non-selective; relies on volatility, likely attacking both ZnS and SiO₂.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The larger drop after HF indicates it causes the major physical removal or volumetric change, likely by converting crystalline ZnS into a porous, volatile, or low-density zinc fluoride (ZnF₂) compound. The subsequent TMA step then cleans up this modified layer, causing a smaller but essential thickness change to complete the cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This enables digital etch trimming of quantum dot layers with sub-nanometer precision. Engineers can remove exact numbers of monolayers to tune quantum confinement and emission wavelength after growth, or to expose a specific subsurface dot layer with minimal damage to adjacent layers.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_5.jpg","caption":"Figure 5. Thickness change of $\\mathrm{ZnS}$ film vs number of $\\mathrm{ZnS}$ ALE cycles at 225, 250, 275, and $300^{\\circ}\\mathrm{C}$ . Initial $\\mathrm{ZnS}$ ALE films were grown at $100^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/23/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":667,"height":583,"image_format":"jpeg","image_sha256":"87f7a8eb795c5f28a0bfe24b8618b29a5cac7cbdee9abe55a69be65021579f28","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":4,"width":665,"height":577}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart shows the reduction in ZnS film thickness with increasing ALE cycles (0–20) at temperatures from 225 °C to 300 °C for films initially deposited at 100 °C. All values display a linear decrease in thickness, confirming a constant etch per cycle and a well-controlled, self-limiting ALE process. The slope increases with temperature, indicating thermally activated etching, with the highest etch rate at 300 °C (~2.1 Å/cycle) and the lowest at 225 °C (~1.25 Å/cycle).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of ALE Cycles | Change in ZnS Thickness (Å) | Temperature |\\n|------------|------------------|-------------|\\n| 0 | 0 | 225 °C |\\n| 0 | 0 | 250 °C |\\n| 0 | 0 | 275 °C |\\n| 0 | 0 | 300 °C |\\n| 2 | -1.23 | 225 °C |\\n| 2 | -1.86 | 250 °C |\\n| 2 | -2.35 | 275 °C |\\n| 2 | -3.59 | 300 °C |\\n| 4 | -3.59 | 225 °C |\\n| 4 | -5.20 | 250 °C |\\n| 4 | -6.56 | 275 °C |\\n| 4 | -7.80 | 300 °C |\\n| 6 | -6.68 | 225 °C |\\n| 6 | -8.91 | 250 °C |\\n| 6 | -10.77 | 275 °C |\\n| 6 | -11.88 | 300 °C |\\n| 8 | -10.27 | 225 °C |\\n| 8 | -12.25 | 250 °C |\\n| 8 | -14.72 | 275 °C |\\n| 8 | -16.71 | 300 °C |\\n| 10 | -12.37 | 225 °C |\\n| 10 | -15.84 | 250 °C |\\n| 10 | -19.31 | 275 °C |\\n| 10 | -20.79 | 300 °C |\\n| 12 | -15.84 | 225 °C |\\n| 12 | -19.18 | 250 °C |\\n| 12 | -23.02 | 275 °C |\\n| 12 | -24.87 | 300 °C |\\n| 14 | -18.56 | 225 °C |\\n| 14 | -23.02 | 250 °C |\\n| 14 | -27.47 | 275 °C |\\n| 14 | -29.94 | 300 °C |\\n| 16 | -21.16 | 225 °C |\\n| 16 | -27.22 | 250 °C |\\n| 16 | -32.04 | 275 °C |\\n| 16 | -34.27 | 300 °C |\\n| 18 | -23.02 | 225 °C |\\n| 18 | -30.93 | 250 °C |\\n| 18 | -35.76 | 275 °C |\\n| 18 | -38.24 | 300 °C |\\n| 20 | -26.48 | 225 °C |\\n| 20 | -34.27 | 250 °C |\\n| 20 | -40.46 | 275 °C |\\n| 20 | -43.18 | 300 °C |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process is thermally activated. Increasing the temperature from 225°C to 300°C nearly doubles the material removal: at 225°C, roughly -25 Å is removed after 20 cycles, whereas at 300°C, roughly -42 Å is removed.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"300°C Process: Advantage: Faster, higher-throughput etch. Disadvantage : Risk of thermal damage to the underlying sensitive layer.\\n\\n225°C Process: Advantage: Lower thermal budget, safer for the underlying layer. Disadvantage: Much slower etch rate, reducing throughput.\\n\\nFor a temperature-sensitive substrate, the 225°C process is preferable. The trade-off is accepting a slower etch rate to preserve the integrity of the underlying material.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The constant slope proves that the surface chemistry resets perfectly after every cycle. There is no \\\"memory effect,\\\" residue accumulation, or surface roughening that inhibits (or accelerates) the reaction over time; the 20th cycle removes exactly as much material as the 1st cycle, confirming the robust, self-limiting nature of the ALE mechanism.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This enables the precise tuning of optical cavity lengths in ZnS-based micro-resonators or filters. By running an exact number of ALE cycles, the thickness of a ZnS waveguide layer can be reduced with sub-nanometer accuracy, allowing for post-fabrication trimming of the device's resonant wavelength to a specific target value without degrading surface smoothness.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_29_fig_3.jpg","caption":"FiG. 3. Surface roughness variation of AlGaN as a function of etch depth of the AlGaN film after (a) BT step, (b) RIE, (c) ALE using $\\mathrm{Cl}_2$ plasma, and (d) ALE using $\\mathrm{Cl}_2$ gas.","id":"train/atomic-layer-etching/experimental-usecase/29/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/29/fig_3","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/Atomic layer etching of AlGaN using Cl2 and Ar gas.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":539,"height":505,"image_format":"jpeg","image_sha256":"555566156ae829fe484902fa42b67611173633967ab2d909e07ce9cb388792ed","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":4,"width":538,"height":501}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between etch depth and RMS roughness variation for different treatments, including RIE, ALE with Cl2 gas or Cl2 plasma, with the reference after BT.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Etch Depth (nm) | RMS Roughness Variation (nm) RIE |RMS Roughness Variation (nm) Cl2 gas |RMS Roughness Variation (nm) Cl2 plasma |\\n|---|---|---|---|\\n| 0 | 0 |0 | 0 |\\n| 3 | 0.05|0.01|0|\\n| 5 | 0.15 |0.05|0|\\n| 7 | 0.2|0.05|0|\\n| 10 | - |-|-0.01|\\n| 15 | - |-|-|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"RIE is increasing the roughness of the substrate, this is likely due to the sort of random distribution of ion influences on the substrate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the case of perfect ALE, all bumps and holes on a substrate are equally etched so the average roughness does not change.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The roughness changes with 0.15 nm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Cl2 plasma process seems to slightly decrease the roughness but remains constant, the Cl2 gas process increases the roughness on the other hand.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_34_fig_7.jpg","caption":"FIG. 7. $\\mathrm{Al}_2\\mathrm{O}_3$ film thickness vs cycle number of pALE for various process temperatures.","id":"train/atomic-layer-etching/experimental-usecase/34/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/34/fig_7","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/CF4 plasma-based atomic layer etching of Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":675,"height":523,"image_format":"jpeg","image_sha256":"d66e5a44f77fe217ca6add20c07c2fb5c5bb436523268e627a6909f1ca735da4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":523}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares Al₂O₃ film thickness across increasing pALE cycle numbers at four different temperatures. Higher temperatures (350–400°C) show significantly greater film removal per cycle, while lower temperatures (250–300°C) show slower and less pronounced thinning, indicating a clear temperature-dependent etch rate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle number of pALE|250°C|300°C|350°C|400°C|\\n|---------------------|-----|-----|-----|-----|\\n|0|0|0|0|0|\\n|50|-5|-7|-9|-18|\\n|100|-7|-10|-12|-25|\\n|150|-8|-15|-18|-34|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure indicates that higher temperatures significantly accelerate Al₂O₃ removal during pALE, allowing for deeper etching in fewer cycles. Conversely, lower temperatures produce minimal thinning and offer finer control for delicate processing. Understanding this temperature-dependent response helps identify the optimal balance between etch rate, precision, and thermal stability for specific applications.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At higher temperatures such as 400°C, the film becomes much more negative (up to −34 nm), while at 250°C the thickness only decreases slightly (around −5 to −8 nm).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Higher thermal energy increases etch reactivity, Faster surface removal at elevated temperatures, Lower temperatures show slower, limited thinning\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_10.jpg","caption":"Fig. 10. Cyclic number dependence of the blanket $\\mathrm{TiO_2}$ etched amount at different stage temperatures: (O) both steps had temperatures of $60^{\\circ}\\mathrm{C}$ , $(\\Delta)$ the $\\mathrm{C_4F_8}$ plasma had a temperature of $20^{\\circ}\\mathrm{C}$ and the $\\mathrm{O_2}$ plasma a temperature of $60^{\\circ}\\mathrm{C}$ , $(\\square)$ and the $\\mathrm{C_4F_8}$ plasma had a temperature of $60^{\\circ}\\mathrm{C}$ and the $\\mathrm{O_2}$ plasma a temperature of $20^{\\circ}\\mathrm{C}$ . The plasma treatment time was $30\\mathrm{s}$ under all conditions.","id":"train/atomic-layer-etching/experimental-usecase/36/fig_10","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_10","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":669,"height":448,"image_format":"jpeg","image_sha256":"65d9ad11d60f4fc2a419d63a0b83a1d1a535b99cfba544ad1b889c4e24707fe3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":661,"height":438}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the etched amount of TiO₂ against the number of cycles for different plasma conditions (\\\"60 °C (C₄F₈ plasma), 60 °C (O₂ plasma)\\\", \\\"20 °C (C₄F₈ plasma), 60 °C (O₂ plasma)\\\", \\\"60 °C (C₄F₈ plasma), 20 °C (O₂ plasma)\\\"). The condition \\\"60 °C (C₄F₈ plasma), 60 °C (O₂ plasma)\\\" results in the highest amount etched over cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of cycles | blencket TiO2 etched amount (nm) | Measurement |\\n|---|---|---|\\n| 0 | 0 | 60 °C (C₄F₈ plasma), 60 °C (O₂ plasma) |\\n| 1 | 0.79 | 60 °C (C₄F₈ plasma), 60 °C (O₂ plasma) |\\n| 4 | 2.94 | 60 °C (C₄F₈ plasma), 60 °C (O₂ plasma) |\\n| 8 | 5.58 | 60 °C (C₄F₈ plasma), 60 °C (O₂ plasma) |\\n| 12 | 8.68 | 60 °C (C₄F₈ plasma), 60 °C (O₂ plasma) |\\n| 0 | 0 | 20 °C (C₄F₈ plasma), 60 °C (O₂ plasma) |\\n| 1 | 0.96 | 20 °C (C₄F₈ plasma), 60 °C (O₂ plasma) |\\n| 3 | 2.19 | 20 °C (C₄F₈ plasma), 60 °C (O₂ plasma) |\\n| 5 | 3.86 | 20 °C (C₄F₈ plasma), 60 °C (O₂ plasma) |\\n| 0 | 0 | 60 °C (C₄F₈ plasma), 20 °C (O₂ plasma) |\\n| 1 | 0.6 | 60 °C (C₄F₈ plasma), 20 °C (O₂ plasma) |\\n| 3 | 1.03 | 60 °C (C₄F₈ plasma), 20 °C (O₂ plasma) |\\n| 6 | 1.54 | 60 °C (C₄F₈ plasma), 20 °C (O₂ plasma) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"O₂ plasma step is more temperature dependent. Lowering C₄F₈ plasma step temperature has little effect. Lowering the temperature for the O₂ plasma step significantly reduces the etch amount.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This suggests the step (the removal of the modified layer) is thermally activated.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"60 °C C₄F₈ plasma, 20 °C O₂ plasma (smallest error bars and least fluctuation).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"60 °C C₄F₈ plasma, 60 °C O₂ plasma (largest error bars and highest variability).\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_14.jpg","caption":"Fig. 14. Sidewall $\\mathrm{TiO_2}$ thicknesses of the trench pattern samples as deposited and after the cyclic processes.","id":"train/atomic-layer-etching/experimental-usecase/36/fig_14","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_14","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":666,"height":437,"image_format":"jpeg","image_sha256":"c07628641567f17b181cc1a90f1d293eece792df37bfb6d8c8e56d83c5478db0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":663,"height":433}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between depth and sidewall TiO2 thickness as deposited and for different plasma treatments (30s and 60s oxygen plasma treatment, after 8 cycles).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Depth (nm) | Sidewall TiO2 thickness (nm) | Measurement | \\n|---|---|---|\\n| 681 | 9.04 | as TiO2 deposited |\\n| 1391 | 9.55 | as TiO2 deposited |\\n| 2091 | 9.78 | as TiO2 deposited |\\n| 2786 | 9.20 | as TiO2 deposited |\\n| 3496 | 9.69 | as TiO2 deposited |\\n| 51 | 8.88 | after 8 cycles, 30 s oxygen plasma |\\n| 695 | 5.35 | after 8 cycles, 30 s oxygen plasma |\\n| 1400 | 5.88 | after 8 cycles, 30 s oxygen plasma |\\n| 2095 | 6.33 | after 8 cycles, 30 s oxygen plasma |\\n| 2800 | 6.15 | after 8 cycles, 30 s oxygen plasma |\\n| 3496 | 5.59 | after 8 cycles, 30 s oxygen plasma |\\n| 27.8 | 5.88 | after 8 cycles, 60 s oxygen plasma |\\n| 690 | 4.47 | after 8 cycles, 60 s oxygen plasma |\\n| 1391 | 5.21 | after 8 cycles, 60 s oxygen plasma |\\n| 2100 | 4.74 | after 8 cycles, 60 s oxygen plasma |\\n| 2800 | 5.10 | after 8 cycles, 60 s oxygen plasma |\\n| 3496 | 5.82 | after 8 cycles, 60 s oxygen plasma |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Not uniform, as the top remains unetched while the deeper sections show significant material removal.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"60 s plasma treatment.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ 4.4 nm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The protective layer is thicker at the top of the trench. This is demonstrated by the significantly smaller amount of etched TiO₂ at the trench opening compared to the deeper sidewalls under identical plasma conditions. The thicker protective layer at the top prevents the underlying material from being etched for longer, until the layer is fully removed.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_3.jpg","caption":"Fig. 3. (a) Depth dependence of the sidewall $\\mathrm{TiO_2}$ thicknesses before and after $\\mathrm{CF_4}$ plasma treatment for $30~\\mathrm{s}$ and (b) the sidewall etched amount.","id":"train/atomic-layer-etching/experimental-usecase/36/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_3","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":677,"height":933,"image_format":"jpeg","image_sha256":"6485613f3dee907980fdfb2f2b9b7c166cc20c9ea54deaa8bf239b9ac710ad1f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":673,"height":464},{"panel_id":"b","x":5,"y":471,"width":670,"height":460}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart compares the sidewall TiO2 thickness in nm for pristine TiO2 and TiO2 after plasma etching as a function of depth. Sidewall thickness after etching is lower than before.\"},{\"panel_id\":\"b\",\"text\":\"The scatter plot shows the sidewall TiO2 etched amount in nm as a function of depth. The etching at lower depths is higher.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| depth (nm) | Sidewall TiO2 thickness (nm): Pristine | Sidewall TiO2 thickness (nm): after RIE |\\n| --- | --- | --- |\\n| 20 | 9,83 | 4,35 |\\n| 39 | 9,79 | 7,76 |\\n| 60 | 9,65 | 7,81 |\\n| 80 | 9,97 | 8,08 |\\n| 101 | 9,60 | 8,13 |\\n| 119 | 9,83 | 8,13 |\\n| 139 | 9,83 | 8,13 |\\n| 160 | 9,56 | 8,27 |\\n| 179 | 9,60 | 8,45 |\\n| 199 | 9,65 | 8,41 |\\n| 219 | 9,65 | 8,31 |\\n| 240 | 9,79 | 8,36 |\\n| 257 | 9,60 | 8,45 |\\n| 280 | 9,79 | 8,50 |\\n| 299 | 9,47 | 8,04 |\"},{\"panel_id\":\"b\",\"text\":\"| depth (nm) | sidewall TiO2 etched amount (nm) |\\n|---|---|\\n| 19 | 5,46 |\\n| 38 | 2,08 |\\n| 58 | 1,92 |\\n| 78 | 1,92 |\\n| 97 | 1,43 |\\n| 119 | 1,62 |\\n| 139 | 1,57 |\\n| 159 | 1,41 |\\n| 178 | 1,11 |\\n| 200 | 1,22 |\\n| 218 | 1,43 |\\n| 239 | 1,43 |\\n| 259 | 1,22 |\\n| 280 | 1,27 |\\n| 300 | 1,41 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It was uniform.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Tapered (because the etching is stronger at the top opening than deep inside).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Top 20 nm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etching gets weaker. The etched amount drops from ~5.5 nm at the top to ~1.5 nm at the bottom. This happens because plasma is mostly being consumed at the top and can't reach the bottom effectively.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_38_fig4.jpg","caption":"FIG.4. (a) Plted etch depth vs ALE cycle. Dashed line marks the transition between AlGaN and GaN layers. AFM scans of various steps (b) 25, (c) 100, (d) 300, and (e) 400 cycles.","id":"train/atomic-layer-etching/experimental-usecase/38/fig4","sample_id":"atomic-layer-etching/experimental-usecase/38/fig4","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"unknown"},{"panel_id":"c","label":"unknown"},{"panel_id":"d","label":"unknown"},{"panel_id":"e","label":"unknown"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/High synergy atomic layer etching of AlGaNGaN.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":1344,"height":1192,"image_format":"jpeg","image_sha256":"9bc43ca2f343a8ac0c5ef28ed4b02b61f0e0fb9122b4fc36f60f570b26b143c3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":76,"y":6,"width":1081,"height":470},{"panel_id":"b","x":6,"y":539,"width":644,"height":291},{"panel_id":"c","x":681,"y":546,"width":652,"height":291},{"panel_id":"d","x":10,"y":890,"width":630,"height":280},{"panel_id":"e","x":690,"y":890,"width":643,"height":289}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_40_fig5.jpg","caption":"FIG.5. Atomic concentrations of Ti, N, O, F, and C vs Ar milling time and estimated depth for (a) original and (b) ALE-treated TiN thin films. The dashed lines are guides to the eye.","id":"train/atomic-layer-etching/experimental-usecase/40/fig5","sample_id":"atomic-layer-etching/experimental-usecase/40/fig5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/Isotropic plasma-thermal atomic layer etching of.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":669,"height":1008,"image_format":"jpeg","image_sha256":"db34d255221b4ea2146e04e45e267f82408f1dfbe7f7ce2b4da4dbe9f713b3af","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":12,"y":13,"width":657,"height":488},{"panel_id":"b","x":18,"y":528,"width":651,"height":480}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Depth-profiling XPS data for the original TiN film showing atomic concentrations versus Ar sputtering time and estimated depth. At the surface, oxygen (~16%) and carbon (~12%) are elevated due to native oxide and adventitious carbon. After ~60 s of sputtering (~2 nm depth), concentrations plateau to bulk values: Ti (~49%), N (~42%), O (~6%), C (~2%), and F (~1%).\"},{\"panel_id\":\"b\",\"text\":\"Depth-profiling XPS data for the ALE-treated TiN film. The surface shows significantly lower oxygen (~8%) compared to the original film, while fluorine is slightly elevated (~6.5%). Bulk composition remains essentially unchanged from the original film, confirming that ALE affects only the top few nanometers.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sputtering time, s | Estimated depth, nm | Ti (%) | N (%) | F (%) | O (%) | C (%) |\\n|---|---|---|---|---|---|---|\\n| 0 | 0 | 32 | 38 | 3 | 15 | 12 |\\n| 60 | 2 | 46 | 45 | 3 | 5 | 2 |\\n| 120 | 3 | 48 | 43 | 2 | 6 | 2 |\\n| 180 | 5 | 48 | 43 | 2 | 6 | 2 |\\n| 240 | 7 | 48 | 42 | 2 | 6 | 2 |\\n| 300 | 8 | 50 | 42 | 2 | 6 | 2 |\\n| 360 | 10 | 48 | 41 | 2 | 6 | 2 |\"},{\"panel_id\":\"b\",\"text\":\"| Sputtering time, s | Estimated depth, nm | Ti (%) | N (%) | F (%) | O (%) | C (%) |\\n|---|---|---|---|---|---|---|\\n| 0 | 0 | 34 | 41 | 6 | 7 | 12 |\\n| 60 | 2 | 47 | 46 | 2 | 5 | 2 |\\n| 120 | 3 | 49 | 44 | 2 | 5 | 2 |\\n| 180 | 5 | 49 | 43 | 2 | 5 | 2 |\\n| 240 | 7 | 50 | 43 | 1 | 6 | 2 |\\n| 300 | 8 | 50 | 43 | 1 | 6 | 2 |\\n| 360 | 10 | 49 | 42 | 1 | 6 | 2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The compositional gradient in the first 2 nm reflects the presence of a modified surface layer on the TiN film. At the surface, native oxide formation from atmospheric exposure causes elevated oxygen content, while adventitious carbon contamination adds to the carbon signal. As the Ar ion beam sputters through this surface layer, it reaches the bulk TiN film where the composition stabilizes at the stoichiometric values determined by the ALD growth process. This depth-dependent behavior confirms that surface contamination and oxidation are confined to a thin surface region.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ti, N, F, O, C\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The surface oxygen decreases from approximately 16% in the original film to about 8% in the ALE-treated film, representing a 49% reduction.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the ALE process does not alter the bulk composition. Both the original and ALE-treated films show nearly identical bulk atomic concentrations after sputtering beyond 2 nm depth: approximately 49% Ti, 42% N, 6% O, 2% C, and 1% F. This indicates that the plasma-thermal ALE process selectively modifies only the surface region while preserving the intrinsic film properties. This characteristic is important for applications where maintaining bulk superconducting or electronic properties is essential.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_40_fig_2.jpg","caption":"FIG. 2. (a) Etch rate of $\\mathrm{TiO}_2$ (red circles) and TiN (blue squares) vs the $\\mathrm{SF}_6{:}\\mathrm{H}_2$ flow rate ratio. The green shaded area represents the flow rate ratios for which selective etching of $\\mathrm{TiO}_2$ over TiN was achieved. The vertical dashed black line at a ratio of 0.2 represents the ratio used in the ALE experiments. (b) TiN thickness change vs number of cycles with exposure only to $\\mathrm{O}_2$ gas (red triangles), in situ HF (green squares), full ALE process at $200^{\\circ}\\mathrm{C}$ (purple circles), and $300^{\\circ}\\mathrm{C}$ (blue diamonds). The dashed lines are guides to the eye.","id":"train/atomic-layer-etching/experimental-usecase/40/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/40/fig_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/Isotropic plasma-thermal atomic layer etching of.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":675,"height":1117,"image_format":"jpeg","image_sha256":"2bb69647bfc4e2690a1e30795d286d79c3e41894b5b83bfdb26b0d07e8aaa3a3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":41,"width":650,"height":525},{"panel_id":"b","x":11,"y":586,"width":648,"height":525}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch rate of TiO₂ and TiN as a function of SF₆:H₂ flow rate ratio.\"},{\"panel_id\":\"b\",\"text\":\"The thickness change of materials with different treatments as a function of the number of cycles\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| SF₆:H₂ flow rate ratio | TiO₂ (Å s⁻¹) | TiN (Å s⁻¹) |\\n|---|---|---|\\n| 0 | 0.00 | -0.05 |\\n| 0.05 | 0.00 | -0.05 |\\n| 0.10 | 0.18 | -0.03 |\\n| 0.15 | 0.45 | -0.02 |\\n| 0.20 | 0.58 | 0.00 |\\n| 0.25 | 0.65 | 0.16 |\\n| 0.30 | 0.73 | 0.33 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of cycles | O₂ gas (nm) | In-situ HF (nm) | ALE 200°C (nm) | ALE 300°C (nm) |\\n|---|---|---|---|---|\\n| 0 | 0 | 0 | 0 | 0 |\\n| 20 | 0 | 0 | -5 | -6.5 |\\n| 40 | 0 | 0 | -10 | -13 |\\n| 60 | 0 | 0 | -15 | -19 |\\n| 80 | 0 | -1 | -20 | -26 |\\n| 100 | 0 | -1 | -24 | -33 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A ratio of 0.2 was selected for the ALE experiments, as indicated by the vertical dashed line in the figure. This ratio was chosen because it lies at the upper boundary of the selective etching window (0.1 to 0.2) where TiO2 is etched while TiN remains unetched. At this ratio, the SF6/H2 plasma produces sufficient in-situ HF to etch the oxide layer, but the fluorine radical concentration remains low enough to avoid spontaneous etching of TiN. This maximizes the etch rate of the modified layer while maintaining selectivity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"When the SF6:H2 ratio exceeds 0.2, the concentration of fluorine radicals in the plasma becomes sufficient to spontaneously etch TiN. At lower ratios, hydrogen radicals combine with fluorine radicals to form HF molecules, which do not etch TiN due to its 3+ oxidation state. However, at higher ratios, excess fluorine radicals are available that can directly attack the TiN surface, leading to uncontrolled etching of both TiO2 and TiN and loss of selectivity.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The green shaded region represents the range of SF6:H2 flow rate ratios (0.1 to 0.2) where selective etching of TiO2 over TiN is achieved.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch rate at 300°C (3.2 Å/cycle) is approximately 33% higher than at 200°C (2.4 Å/cycle).\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_40_fig_7.jpg","caption":"FIG. 7. Resistivity vs temperature for an original $60~\\mathsf{nm}$ TiN film (blue squares), an ALE-treated film of $50~\\mathsf{nm}$ thickness (red circles), and a $50~\\mathsf{nm}$ ALD TiN film (black diamonds) for comparison. The difference in $T_{c}$ between the $50~\\mathsf{nm}$ ALD film and the ALE-treated $50~\\mathsf{nm}$ film is negligible. The dashed lines are guides to the eye.","id":"train/atomic-layer-etching/experimental-usecase/40/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/40/fig_7","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/Isotropic plasma-thermal atomic layer etching of.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":542,"image_format":"jpeg","image_sha256":"dc38a50162b60d977b7f24fc47c3d3159bb61574b450b9f00a79347ae0751e66","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":668,"height":537}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Resistivity versus temperature (1.7 to 6 K) showing superconducting transitions for three TiN films. The 60 nm ALD film (blue) has Tc ≈ 3.22 K and resistivity ~222 μΩcm. The ALE-treated 50 nm film (red) and 50 nm ALD reference (black) show nearly identical Tc ≈ 3.1 K, demonstrating that ALE does not degrade superconducting properties beyond the expected thickness dependence.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature, K | 60 nm ALD (μΩcm) | 50 nm after ALE (μΩcm) | 50 nm ALD (μΩcm) |\\n|---|---|---|---|\\n| 2.0 | 0 | 0 | 0 |\\n| 2.5 | 0 | 0 | 0 |\\n| 2.9 | 0 | 0 | 0 |\\n| 3.0 | 0 | 0 | 85 |\\n| 3.05 | 0 | 5 | 110 |\\n| 3.1 | 15 | 150 | 150 |\\n| 3.15 | 65 | 165 | 175 |\\n| 3.2 | 150 | 185 | 190 |\\n| 3.3 | 185 | 195 | 210 |\\n| 3.5 | 210 | 200 | 220 |\\n| 4.0 | 215 | 202 | 225 |\\n| 5.0 | 218 | 203 | 227 |\\n| 6.0 | 220 | 205 | 228 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE-treated 50 nm film has Tc ≈ 3.13 K, which is nearly identical to the 50 nm ALD reference film at Tc ≈ 3.11 K. This negligible difference demonstrates that the ALE process does not introduce damage that would degrade superconducting properties. The small Tc reduction from the 60 nm film (Tc ≈ 3.22 K) is consistent with expected thickness-dependent behavior.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure demonstrates that the plasma-thermal ALE process is low-damage. Conventional etching methods often degrade superconducting properties through subsurface damage or contamination. Here, the ALE-treated film maintains the same Tc as an as-deposited film of equal thickness, confirming that ALE removes material without harming the remaining film quality.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE-treated film has lower resistivity (~201 μΩcm) compared to the 50 nm ALD film (~227 μΩcm) due to reduced native oxide after etching. The authors hypothesize that fluorine incorporation during ALE may also act as a diffusion barrier, slowing reoxidation when exposed to atmosphere.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Four-point resistivity measurements using a Quantum Design DynaCool Physical Property Measurement System (PPMS) from 6 K down to 1.7 K.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_42_figure_2.jpg","caption":"Figure 2. (a) Film thickness versus number of HF and $\\mathrm{Sn(acac)}_2$ reaction cycles at $200^{\\circ}\\mathrm{C}$ for a variety of materials. (b) Film thickness versus number of HF and $\\mathrm{Sn(acac)}_2$ reaction cycles at $200^{\\circ}\\mathrm{C}$ for $\\mathrm{Al}_2\\mathrm{O}_3$ , $\\mathrm{HfO}_2$ , and $\\mathrm{ZrO}_2$ showing etch rates.","id":"train/atomic-layer-etching/experimental-usecase/42/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/42/figure_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/Selectivity in Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":673,"height":1003,"image_format":"jpeg","image_sha256":"8e969cb2dbf584acd89641ce66d575dfdd841aaa9ad1b55912724f73559f7059","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":4,"width":671,"height":454},{"panel_id":"b","x":0,"y":464,"width":665,"height":534}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the film thickness of various materials (TiN, SiO₂, Si₃N₄, HfO₂, ZrO₂, Al₂O₃) at 200°C when Sn(acac)2 is used for etching.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the atomic layer deposition (ALE) rates when Sn(acac)2 is used for etching for HfO₂, ZrO₂, and Al₂O₃ at 200°C over cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Film Thickness (Å) | TiN | SiO₂ | Si₃N₄ | HfO₂ | ZrO₂ | Al₂O₃ |\\n|-------------------|-----|------|-------|------|------|-------|\\n| 0 | 70 | 50 | 40 | 30 | 0 | 30 |\\n| 1-30-1-30 | 68 | 48 | 38 | 32 | 0 | 28 |\\n| 200°C | 66 | 46 | 36 | 30 | 0 | 26 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Cycles | HfO₂ ALE: 0.06 Å/cycle | ZrO₂ ALE: 0.14 Å/cycle | Al₂O₃ ALE: 0.23 Å/cycle |\\n|------------------|------------------------|------------------------|-------------------------|\\n| 0 | 50 | 50 | 50 |\\n| 100 | 45 | 45 | 40 |\\n| 200 | 40 | 40 | 25 |\\n| 400 | 35 | 35 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Sequential exposures of HF and acetylacetone (acacH, Sigma-Aldrich >99%) did not lead to the etching of Al2O3 at 200 °C. Without the metal acetylacetonate precursor, acetylacetone alone does not yield thermal ALE.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"From the film thicknesses after 50, 100, 200, and 400 ALE cycles using sequential HF and Sn(acac)2 exposures at 200 °C, Al2O3, ZrO2, and HfO2 films were etched linearly versus the number of ALE cycles. In contrast, there were no measurable\\nthickness changes for the SiO2, Si3N4, and TiN films.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The slopes from the linear least-squares fittings of the data in image b yielded etch rates of 0.23 Å/cycle, 0.14 Å/cycle, and 0.06 Å/cycle for the Al2O3, ZrO2, and HfO2 films, respectively\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Additional control experiments were performed on the Al2O3, ZrO2, and HfO2 films to determine if both HF and Sn(acac)2 were necessary for the thermal ALE. Experiments using 200 cycles of HF exposures observed negligible thickness changes for the Al2O3, ZrO2, and HfO2 films.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_42_figure_3.jpg","caption":"Figure 3. (a) Film thickness versus number of HF and TMA reaction cycles at $300^{\\circ}\\mathrm{C}$ for a variety of materials. (b) Film thickness versus number of HF and TMA reaction cycles at $300^{\\circ}\\mathrm{C}$ for $\\mathrm{Al}_2\\mathrm{O}_3$ , $\\mathrm{HfO}_2$ , and $\\mathrm{ZrO}_2$ showing etch rates.","id":"train/atomic-layer-etching/experimental-usecase/42/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/42/figure_3","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/Selectivity in Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":1009,"image_format":"jpeg","image_sha256":"8324b60255a0acd9120ea88d7bed815d40e0a82cb6273ef6a33d15380937a7af","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":455},{"panel_id":"b","x":0,"y":471,"width":669,"height":538}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the film thickness of various materials (TiN, ZrO₂, SiO₂, Si₃N₄, HfO₂, Al₂O₃) at 300°C using TMA and HF for ALE etching.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the atomic layer etching (ALE) rates of ZrO₂, HfO₂, and Al₂O₃ at 300°C using TMA and HF\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | TiN (Å) | SiO₂ (Å) | Al₂O₃ (Å) | Si₃N₄ (Å) | HfO₂ (Å) | ZrO₂ (Å) |\\n|-------------------|---------|----------|-----------|-----------|----------|----------|\\n| 0 | 65 | 50 | 45 | 45 | 55 | 50 |\\n| 50 | 65 | 49 | 30 | 44 | 50 | 49 |\\n| 100 | 65 | 48 | 15 | 43 | 48 | 48 |\\n| 150 | 65 | 47 | 5 | 42 | 40 | 47 |\\n| 200 | 65 | 46 | 0 | 42 | 38 | 46 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Cycles | Al₂O₃ (Å) | HfO₂ (Å) | ZrO₂ (Å) |\\n|-------------------|-----------|----------|----------|\\n| 0 | 45 | 55 | 50 |\\n| 50 | 20 | 50 | 49 |\\n| 100 | 0 | 48 | 48 |\\n| 150 | - | 40 | 47 |\\n| 200 | 0 | 38 | 47 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"All the ALE processes on different materials with HF and TMA are thermal processes conducted at 300 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film thicknesses after 25, 50, 100, and 200 ALE cycles using sequential HF and TMA exposures at 300 °C. The Al2O3 and HfO2 films were etched linearly versus the number of ALE cycles. There were negligible thickness changes during 200 ALE cycles for the ZrO2, SiO2, Si3N4, and TiN films.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Etch rates of 0.45 Å/cycle and 0.10 Å/cycle were measured for the Al2O3 and HfO2 films, respectively. The etch rate of Al2O3 is in agreement with the value measured earlier by quartz crystal microbalance\\n(QCM) and SE experiments.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_42_figure_4.jpg","caption":"Figure 4. (a) Film thickness versus number of HF and DMAC reaction cycles at $250^{\\circ}\\mathrm{C}$ for a variety of materials. (b) Film thickness versus number of HF and DMAC reaction cycles at $250^{\\circ}\\mathrm{C}$ for $\\mathrm{Al}_2\\mathrm{O}_3$ , $\\mathrm{HfO}_2$ , and $\\mathrm{ZrO}_2$ showing etch rates.","id":"train/atomic-layer-etching/experimental-usecase/42/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/42/figure_4","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/Selectivity in Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":673,"height":1005,"image_format":"jpeg","image_sha256":"685e938ba593f3319495ae96ac1a4eadaeffd0c0e2944819df52f53421f16306","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":673,"height":451},{"panel_id":"b","x":0,"y":464,"width":671,"height":538}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the film thickness of various materials (TiN, SiO₂, Si₃N₄, ZrO₂, HfO₂, Al₂O₃) at 250°C for various DMAC and HF etch cycles.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the atomic layer etching (ALE) etch rates of HfO₂, Al₂O₃, and ZrO₂ at 250°C\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Film Thickness (Å) | TiN | SiO₂ | Si₃N₄ | ZrO₂ | HfO₂ | Al₂O₃ |\\n|-------------------|-----|------|-------|------|------|-------|\\n| 0 | 65 | 50 | 40 | 40 | 50 | 45 |\\n| 25 | 65 | 50 | 40 | 30 | 40 | 40 |\\n| 50 | 65 | 50 | 40 | 20 | 30 | 35 |\\n| 100 | 65 | 50 | 40 | 0 | 0 | 20 |\"},{\"panel_id\":\"b\",\"text\":\"| Film Thickness (Å) | HfO₂ ALE: 0.77 Å/cycle | Al₂O₃ ALE: 0.32 Å/cycle | ZrO₂ ALE: 0.96 Å/cycle |\\n|-------------------|-------------------------|-------------------------|-------------------------|\\n| 0 | 50 | 45 | 50 |\\n| 25 | 40 | 40 | 35 |\\n| 50 |20 | 35 | 10 |\\n| 100 | 0 | 20 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film thicknesses after 10, 25, 50, and 100 ALE cycles using sequential HF and DMAC exposures at 250 °C show linear etching\\n for the ZrO2, HfO2, and Al2O3 films. While no measurable thickness changes were observed for the SiO2, Si3N4, and TiN films\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"250 °C\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Al2O3\\n, 2. HfO2\\n, 3. ZrO2\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Etch rates of 0.96 Å/cycle, 0.77 Å/cycle, and 0.32 Å/cycle were determined for the ZrO2, HfO2, and Al2O3 films, respectively. Al2O3 etched at the slowest rate compared to the other two materials.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_42_figure_5.jpg","caption":"Figure 5. (a) Film thickness versus number of HF and $\\mathrm{SiCl}_4$ reaction cycles at $350^{\\circ}\\mathrm{C}$ for a variety of materials. (b) Film thickness versus number of HF and $\\mathrm{SiCl}_4$ reaction cycles at $350^{\\circ}\\mathrm{C}$ for $\\mathrm{Al}_2\\mathrm{O}_3$ , $\\mathrm{HfO}_2$ , and $\\mathrm{ZrO}_2$ showing etch rates.","id":"train/atomic-layer-etching/experimental-usecase/42/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/42/figure_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/Selectivity in Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":1005,"image_format":"jpeg","image_sha256":"24098daf06b854c9163821f2cf3c8b0f8a7c67472fc77be0b6040dd61f2417fc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":669,"height":468},{"panel_id":"b","x":2,"y":470,"width":664,"height":528}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the film thickness of various materials (TiN, Al₂O₃, SiO₂, Si₃N₄, HfO₂, ZrO₂) at 350°C using SiCl₄ as function of number of cycles\"},{\"panel_id\":\"b\",\"text\":\"The figure compares the film thickness of Al₂O₃, HfO₂, and ZrO₂ with different atomic layer deposition (ALE) rates at 350°C using SiCl₄.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | TiN (Å) | SiO₂ (Å) | Al₂O₃ (Å) | Si₃N₄ (Å) | HfO₂ (Å) | ZrO₂ (Å) |\\n|-------------------|---------|----------|-----------|-----------|----------|----------|\\n| 0 | 65 | 50 | 45 | 45 | 55 | 50 |\\n| 100 | 65 | 48 | 44 | 44 | 50 | 35 |\\n| 200 | 65 | 47 | 44 | 43 | 48 | 20 |\\n| 300 | 65 | 46 | 43 | 42 | 46 | 10 |\\n| 400 | 65 | 45 | 43 | 42 | 44 | 5 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Cycles | Al₂O₃ (Å) | HfO₂ (Å) | ZrO₂ (Å) |\\n|-------------------|-----------|----------|----------|\\n| 0 | 45 | 55 | 50 |\\n| 100 | 45 | 50 | 35 |\\n| 200 | 45 | 48 | 20 |\\n| 300 | 45 | 46 | 10 |\\n| 400 | 45 | 44 | 5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film thicknesses after 50, 100, 200, and 400 ALE cycles using sequential HF and SiCl4 exposures at 350 °C. The ZrO2 and HfO2 films were etched linearly versus the number of ALE cycles. In contrast, there were no measurable thickness changes during 400 ALE cycles for the Al2O3, SiO2, Si3N4, and TiN films\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Al₂O₃ ALE: 0 Å/cycle \\n, HfO₂ ALE: 0.05 Å/cycle \\n, ZrO₂ ALE: 0.14 Å/cycle\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Image b shows only those materials which get etched with HF anf SiCl4 from the group shown in image a\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_42_figure_6.jpg","caption":"Figure 6. (a) Etch rates for $\\mathrm{ZrO}_2$ and $\\mathrm{HfO}_2$ versus $\\mathrm{SiCl}_4$ exposure time with constant HF exposure time of $1.0~\\mathrm{s}$ . (b) Etch rates for $\\mathrm{ZrO}_2$ and $\\mathrm{HfO}_2$ versus HF exposure time with constant $\\mathrm{SiCl}_4$ exposure time of $2.0~\\mathrm{s}$ .","id":"train/atomic-layer-etching/experimental-usecase/42/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/42/figure_6","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/Selectivity in Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":675,"height":755,"image_format":"jpeg","image_sha256":"20569855f7d316f1dff5d5cb45a6e82fb45e7830b4503a4e6e222c2993aeacdf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":6,"width":669,"height":366},{"panel_id":"b","x":0,"y":377,"width":673,"height":376}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch rate of ZrO₂ and HfO2 increases slightly with increasing SiCl₄ exposure time at 350°C.\"},{\"panel_id\":\"b\",\"text\":\"The etch rate of ZrO₂ increases significantly while HfO2 only slightly with increasing HF exposure time at 350°C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| SiCl₄ Exposure Time (s) | ZrO₂ Etch Rate (Å/cycle) | HfO₂ Etch Rate (Å/cycle) |\\n|--------------------------|---------------------------|---------------------------|\\n| 0.0 | 0.00 | 0.00 |\\n| 0.5 | 0.13 | 0.05 |\\n| 1.0 | 0.14 | 0.06 |\\n| 1.5 | 0.14 | 0.06 |\\n| 2.0 | 0.14 | 0.06 |\"},{\"panel_id\":\"b\",\"text\":\"| HF Exposure Time (s) | ZrO₂ Etch Rate (Å/cycle) | HfO₂ Etch Rate (Å/cycle) |\\n|--------------------------|---------------------------|---------------------------|\\n| 0.0 | 0.00 | 0.00 |\\n| 0.5 | 0.07 | 0.03 |\\n| 1.0 | 0.12 | 0.05 |\\n| 1.5 | 0.15 | 0.06 |\\n| 2.0 | 0.17 | 0.06 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rates for both ZrO2 and HfO2 are self-limiting versus SiCl4 exposure. The etch rates are constant at progressively larger SiCl4 exposure times. The etch rates at each SiCl4 exposure time were determined using at least 3−4 measured film\\nthicknesses after different numbers of ALE cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Saturated etch rate for ZrO2 = 0.14 Å/cycle\\n, 2. Saturated etch rate for HfO2 = 0.06 Å/cycle\\n, at HF exposure of 1 s and SiCl4 exposure of 1s\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate for ZrO2 begins to level off at higher HF exposures. The slight increases at larger HF exposures for ZrO2 can be attributed to the difficulty purging HF from the reactor after longer HF exposures. Residual HF remaining in the reactor will lead to chemical vapor etching (CVE) during the SiCl4 exposure. Similar influences of CVE on thermal ALE have been observed earlier after longer HF exposures.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_42_figure_8.jpg","caption":"Figure 8. Thermochemical calculations for the ligand-exchange reactions between $\\mathrm{SiCl_4}$ and $\\mathrm{AlF}_3,$ $\\mathrm{HfF_4}$ and $\\mathrm{ZrF_4}$ Ligand exchange is assumed to proceed completely to $\\mathrm{SiF_4}$ and the corresponding metal chloride.","id":"train/atomic-layer-etching/experimental-usecase/42/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/42/figure_8","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/Selectivity in Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":666,"height":564,"image_format":"jpeg","image_sha256":"51e58fa207e82e7bac33ca8518e5f4617b4efd3b04f6ce7fa461eb5684f4b228","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":4,"width":661,"height":556}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the change in Gibbs free energy (ΔG) for three different chemical reactions as a function of temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | ΔG for SiCl₄ + AlF₃ / SiF₄ + AlCl₃ (kcal/mol) | ΔG for SiCl₄ + HfF₄ / SiF₄ + HfCl₄ (kcal/mol) | ΔG for SiCl₄ + ZrF₄ / SiF₄ + ZrCl₄ (kcal/mol) |\\n|------------------|-----------------------------------------------|-----------------------------------------------|-----------------------------------------------|\\n| 0 | 45 | 8 | 5 |\\n| 100 | 40 | 5 | 2 |\\n| 200 | 35 | 2 | 0 |\\n| 300 | 30 | -2 | -5 |\\n| 400 | 25 | -6 | -10 |\\n| 500 | 20 | -10 | -15 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thermochemistry of the ligand exchange was determined assuming complete ligand exchange to form SiF4 and the fully chlorinated metal in the original metal fluoride.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thermochemical results for the ligand exchange between SiCl4 and AlF3, ZrF4 and HfF4 can be seen in the image. These\\nresults reveal that the ligand exchange between SiCl4 and ZrF4 or HfF4 is thermochemically favorable at >200 °C. In contrast,\\nthe ligand exchange between SiCl4 and AlF3 is not thermchemically favorable at any temperature.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ZrF4 and HfF4 can both undergo ligand exchange with SiCl4 at 350 °C because these reactions are spontaneous with ΔG ≈ −10 kcal/mol. On the other hand, Al2O3 can not be etched at 350 °C because the ligand exchange between SiCl4 and AlF3 is not spontaneous with ΔG ≈ + 26 kcal/mol.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_43_fig_3.jpg","caption":"Fig. 3. Mass change per cycle as a function of (a) $\\mathrm{NF_3}$ remote plasma time or (b) TMA pulse time at $250^{\\circ}\\mathrm{C}$ . The TMA pulse time was $3\\mathrm{~s~}$ in (a), and the $\\mathrm{NF_3}$ remote plasma time was $4\\mathrm{~s~}$ in (b).","id":"train/atomic-layer-etching/experimental-usecase/43/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/43/fig_3","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/Surface reaction during thermal atomic layer etching of aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":628,"height":1183,"image_format":"jpeg","image_sha256":"c28a2d1d5a2e74c0305b445f4263a5894060af962d843b0fe423cce36af4f698","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":4,"width":627,"height":575},{"panel_id":"b","x":5,"y":600,"width":619,"height":575}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This two-panel figure shows Mass Change Per Cycle (MCPC) (ng/(cm²·cycle)) data for the Atomic Layer Etching (ALE) of Al₂O₃, MCPC varies the NF₃ plasma time (with fixed 3s TMA)\"},{\"panel_id\":\"b\",\"text\":\"Mass Change Per Cycle (MCPC) (ng/(cm²·cycle)) varies the TMA pulse time (with fixed 4s NF₃). Both plots show the mass loss saturating, proving each half-reaction is self-limiting.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| NF₃ Remote Plasma Time (s) | MCPC (ng/(cm²·cycle)) | Symbol |\\n|---|---|---|\\n| 0 | 0 |NF₃ remote plasma (square) |\\n| 1.5 | -25 | NF₃ remote plasma (square) |\\n| 2.0 | -60 | NF₃ remote plasma (square) |\\n| 3.0 | -70 | NF₃ remote plasma (square) |\\n| 4.0 | -60 | NF₃ remote plasma (square) |\\n| 4.0 | -2 | NF₃ gas (circle) |\"},{\"panel_id\":\"b\",\"text\":\"| TMA Pulse Time (s) | MCPC (ng/(cm²·cycle)) |\\n|---|---|\\n| 0.0 | 0 |\\n| 0.5 | -25 |\\n| 1.5 | -45 |\\n| 3.0 | -55 |\\n| 4.5 | -58 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The curve would still rise but plateau at a lower maximum mass loss. With an undersaturated TMA dose, not all the fluorinated layer is removed each cycle. The process would not be fully self-limiting or stable, as the etch depth would depend on the incomplete removal step, leading to poor control and possible residue accumulation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The grey region represents an incubation or threshold period. During these short exposures, the incoming fluorine radical flux is too low to fully fluorinate the Al₂O₃ surface to the depth needed for the subsequent ligand-exchange reaction with TMA. Because a sufficient coverage of surface fluoride (AlFₓ) species has not yet formed, TMA cannot remove material, resulting in nearly zero MCPC.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"60 ng/(cm²·cycle corresponds to roughly 2.0 Å/cycle\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"NF₃ Remote Plasma Exposure (4 s)\\n\\n, Purge\\n\\n, TMA Exposure (3 s)\\n\\n, Purge\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_45_figure_10.jpg","caption":"Figure 10. X-ray reflectivity and spectroscopic ellipsometry measurements of TiN film thickness versus number of $\\mathrm{H}_2\\mathrm{O}_2$ and HF reaction cycles at $250^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/45/figure_10","sample_id":"atomic-layer-etching/experimental-usecase/45/figure_10","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/Thermal Atomic Layer Etching of Titanium Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":669,"height":533,"image_format":"jpeg","image_sha256":"fa978ceca71019483da724568888267957195c7e03c4b4dae16c22dfdfeb5f1b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":662,"height":529}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the film thickness in Ångströms (Å) over the number of cycles for XRR and SE methods at 250°C using H₂O₂ and HF\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | XRR (Film Thickness, Å) | SE (Film Thickness, Å) |\\n|---|---|---|\\n| 0 | 63 | 73 |\\n| 50 | 58 | 66 |\\n| 100 | 51 | 61 |\\n| 200 | 39 | 46 |\\n| 400 | 6 | 12 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Using both X-ray reflectivity and spectroscopic ellipsometry provides independent verification of the thickness measurements. XRR also yields additional information about film density and surface roughness. The close agreement between techniques (0.14 vs 0.15 Å/cycle) confirms measurement reliability.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The H₂O₂/HF etch rate (0.15 Å/cycle) is slightly lower than the O₃/HF etch rate (0.20 Å/cycle) at 250°C, reflecting O₃'s stronger oxidizing power.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Linearity confirms that each ALE cycle removes a constant, reproducible amount of material, demonstrating true self-limiting behavior rather than uncontrolled continuous etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"SE measured ~73 Å initial thickness; XRR measured ~63 Å. This offset is maintained throughout but both yield the same etch rate slope.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_45_figure_3.jpg","caption":"Figure 3. X-ray reflectivity and spectroscopic ellipsometry measurements of TiN film thickness versus number of $\\mathrm{O}_3$ and HF reaction cycles at $250^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/45/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/45/figure_3","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/Thermal Atomic Layer Etching of Titanium Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":670,"height":533,"image_format":"jpeg","image_sha256":"8db63fc4f91082c39c489cb9489e931881fa002014e0139c8f1873f7f7763710","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":664,"height":524}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the decrease in film thickness over cycles for TiN ALE at 250°C using O₃ & HF\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | SE (Film Thickness, Å) | XRR (Film Thickness, Å) |\\n|---|---|---|\\n| 0 | 73 | 63 |\\n| 25 | 68 | 61 |\\n| 50 | 63 | 57 |\\n| 100 | 52 | 47 |\\n| 150 | 45 | 26 |\\n| 200 | 34 | 27 |\\n| 300 | 16 | 6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SE gives 0.19 Å/cycle and XRR gives 0.20 Å/cycle—essentially identical within experimental uncertainty, validating both measurement approaches.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The offset (~10 Å difference in initial thickness) arises from different optical/structural models used by each technique. SE uses a Lorentz optical model while XRR measures electron density contrast. Despite this absolute offset, both yield the same etch rate slope.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The optimized sequence was 3-30-1-30: 3 s O₃ exposure, 30 s N₂ purge, 1 s HF exposure, 30 s N₂ purge.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 60 Å of TiN is removed after 300 cycles, reducing the film from ~70 Å to ~10 Å (based on XRR data).\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_45_figure_5.jpg","caption":"Figure 5. Film thickness versus number of $\\mathrm{O}_3$ and HF reaction cycles at $250^{\\circ}\\mathrm{C}$ for $\\mathrm{Al}_2\\mathrm{O}_3$ , $\\mathrm{HfO}_2$ , $\\mathrm{ZrO}_2$ , $\\mathrm{SiO}_2$ , $\\mathrm{Si}_3\\mathrm{N}_4$ , and TiN.","id":"train/atomic-layer-etching/experimental-usecase/45/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/45/figure_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/Thermal Atomic Layer Etching of Titanium Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":537,"image_format":"jpeg","image_sha256":"ee300273ded21a5a8c7e01786806a647f4df35db537fe6752c2d863decd5609d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":662,"height":533}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure demonstrates selective TiN etching using O₃/HF at 250°C. TiN (gray diamonds) shows linear thickness reduction while Al₂O₃, HfO₂, ZrO₂, SiO₂, and Si₃N₄ remain essentially unchanged over 400 cycles. This confirms high selectivity of the ALE process for TiN over common dielectrics and barrier materials.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | TiN | Al₂O₃ | Si₃N₄ | SiO₂ | ZrO₂ | HfO₂ |\\n|-----------------|-----|-------|------|-----|------|------|\\n| 0 | 75 | 40 | 40 | 55 | 55 | 55 |\\n| 100 | 40 | 40 | 40 | 55 | 55 | 55 |\\n| 200 | 20 | 40 | 40 | 55 | 55 | 55 |\\n| 300 | 10 | 40 | 40 | 55 | 55 | 55 |\\n| 400 | 5 | 40 | 40 | 55 | 55 | 55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Etched: TiN only. Unchanged: Al₂O₃, HfO₂, ZrO₂, SiO₂, and Si₃N₄.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"These metal oxides form stable, non-volatile fluorides (AlF₃, HfF₄, ZrF₄) when exposed to HF. Unlike TiF₄ which sublimes at 284°C, these fluorides remain on the surface and cannot be removed thermally under ALE conditions.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Dry HF (without H₂O present) cannot etch SiO₂. The HF/SiO₂ reaction requires water as a catalyst for effective etching.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Selective etching allows precise removal of one material while preserving adjacent structures. For TiN, selective ALE enables controlled thinning or removal without damaging surrounding dielectrics like HfO₂ gate oxides or SiO₂ interlayer dielectrics.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_15_fig_1.jpg","caption":"FIG. 1. Amount of silicon etched as a function of cycle number. For these results, one cycle corresponds to 2255 $\\mathrm{Cl}_2$ impacts and $1000\\mathrm{Ar}^+$ impacts. Each line corresponds to results for a different $\\mathrm{Ar}^+$ ion energy: blue (lowest curve) $-40\\mathrm{eV}$ , green (second lowest curve) $-60\\mathrm{eV}$ , red (second highest curve) $-80\\mathrm{eV}$ , and black (highest curve) $-100\\mathrm{eV}$ . The vertical dashed lines separate the $\\mathrm{Cl}_2$ and $\\mathrm{Ar}^+$ portions of the ALE cycles.","id":"train/atomic-layer-etching/simulation-usecase/15/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/15/fig_1","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1009,"height":461,"image_format":"jpeg","image_sha256":"8c234eeb7004b5bc6086345f378bc5bd03fd0f61573b137f3267a6a24302217e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":3,"width":1002,"height":458}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows silicon ALE using cyclic Cl₂ adsorption and Ar⁺ bombardment, producing a characteristic stair-step etch profile. Material removal occurs only during the ion step, confirming the self-limiting ALE sequence. The etch per cycle increases with ion energy, from ~3 Å at 40 eV to ~11 Å at 100 eV after 8 cycles, indicating that higher energies may exceed the monolayer-limited regime.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle number | Si etched (Å) | Ion energy (eV) |\\n|-------------:|--------------:|---------------:|\\n| 1 | 0.3 | 40 |\\n| 1 | 0.6 | 60 |\\n| 1 | 1.0 | 80 |\\n| 1 | 1.4 | 100 |\\n| 2 | 0.5 | 40 |\\n| 2 | 1.0 | 60 |\\n| 2 | 1.7 | 80 |\\n| 2 | 2.6 | 100 |\\n| 3 | 0.8 | 40 |\\n| 3 | 1.6 | 60 |\\n| 3 | 2.5 | 80 |\\n| 3 | 3.6 | 100 |\\n| 4 | 1.2 | 40 |\\n| 4 | 2.2 | 60 |\\n| 4 | 3.5 | 80 |\\n| 4 | 5.0 | 100 |\\n| 5 | 1.7 | 40 |\\n| 5 | 3.0 | 60 |\\n| 5 | 4.8 | 80 |\\n| 5 | 6.7 | 100 |\\n| 6 | 2.1 | 40 |\\n| 6 | 3.9 | 60 |\\n| 6 | 5.8 | 80 |\\n| 6 | 8.0 | 100 |\\n| 7 | 2.6 | 40 |\\n| 7 | 4.5 | 60 |\\n| 7 | 6.8 | 80 |\\n| 7 | 9.2 | 100 |\\n| 8 | 3.1 | 40 |\\n| 8 | 5.2 | 60 |\\n| 8 | 7.7 | 80 |\\n| 8 | 10.8| 100 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Spontaneous Chemical Etching. Ideally, Cl_2 should only adsorb. If the line rises, it means the chlorine is etching the silicon spontaneously without ion activation, destroying the precision of the ALE process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"40 eV (Blue). Although slower, the lower energy ensures the etch is strictly limited to the surface surface. The 100 eV ions would cause sidewall sputtering or corner rounding, ruining the shape of the delicate nano-fin.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"100 eV (Black). It removes >1.3 Å per cycle (steeper steps). This poses a risk of sub-surface damage or amorphization, as the high-energy ions penetrate deeper than the chemically modified surface layer.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The line would stay flat. Without the kinetic energy of the Ar^+ ions to knock off the chlorinated layer, no material would be removed, resulting in a 'missed step' in the staircase pattern.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_15_fig_2.jpg","caption":"FIG. 2. Chlorine uptake (in units of equivalent monolayers) as a function of cycle number for the cycles described in Fig. 1. Each line corresponds to results for a different $\\mathrm{Ar}^+$ ion energy: blue (lowest curve) $-40\\mathrm{eV}$ , green (second lowest curve) $-60\\mathrm{eV}$ , red (second highest curve) $-80\\mathrm{eV}$ , and black (highest curve) $-100\\mathrm{eV}$ . The vertical dashed lines separate the $\\mathrm{CI}_2$ and $\\mathsf{Ar}^+$ portions of the ALE cycles.","id":"train/atomic-layer-etching/simulation-usecase/15/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/15/fig_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1019,"height":464,"image_format":"jpeg","image_sha256":"fb41ffcfca6c7e138a95a8dc61344badf15f9c5fe833f2bb4c0b49f0e9e415fd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":17,"y":10,"width":1002,"height":454}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This graph illustrates the cyclic nature of the Atomic Layer Etching (ALE) process over 8 cycles. The \\\"sawtooth\\\" pattern represents the alternating addition of Chlorine (rising slope) and removal of material via Argon ion bombardment (falling slope). The distinct colored lines show that higher ion energies (e.g., 100 eV) result in deeper removal of the chlorinated layer compared to lower energies (e.g., 40 eV).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle number | Cu uptake (ML) | Ion energy (eV) |\\n|--------------|---------------:|-----------------:|\\n| 1 | ~1.39 | 40 |\\n| 1 | ~1.05 | 60 |\\n| 1 | ~1.17 | 80 |\\n| 1 | ~1.04 | 100 |\\n| 2 | ~1.50 | 40 |\\n| 2 | ~1.45 | 60 |\\n| 2 | ~1.40 | 80 |\\n| 2 | ~1.35 | 100 |\\n| 3 | ~1.80 | 40 |\\n| 3 | ~1.70 | 60 |\\n| 3 | ~1.60 | 80 |\\n| 3 | ~1.50 | 100 |\\n| 4 | ~1.95 | 40 |\\n| 4 | ~1.85 | 60 |\\n| 4 | ~1.75 | 80 |\\n| 4 | ~1.60 | 100 |\\n| 5 | ~2.00 | 40 |\\n| 5 | ~1.95 | 60 |\\n| 5 | ~1.85 | 80 |\\n| 5 | ~1.55 | 100 |\\n| 6 | ~2.05 | 40 |\\n| 6 | ~2.00 | 60 |\\n| 6 | ~1.95 | 80 |\\n| 6 | ~1.60 | 100 |\\n| 7 | ~2.20 | 40 |\\n| 7 | ~2.10 | 60 |\\n| 7 | ~1.95 | 80 |\\n| 7 | ~1.70 | 100 |\\n| 8 | ~2.10 | 40 |\\n| 8 | ~2.15 | 60 |\\n| 8 | ~1.60 | 80 |\\n| 8 | ~1.40 | 100 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Chlorination (Cl_2 Exposure): Represented by the rising edge where Cl uptake increases.\\nIon Bombardment (Ar^+Irradiation): Represented by the steep downward slope.\\nPhysical Action: The downward slope corresponds to the removal (etching) of the chlorinated surface layer by the argon ions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher Residual Contamination. They are accepting a trade-off where the surface retains significantly more Chlorine (approx. 0.5–0.6 ML vs 0.2 ML) after every cycle, which could alter the starting conditions for the next layer of growth or etch.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 40 eV ions possess lower kinetic energy, which is insufficient to break all the bonds holding the chlorinated species to the surface. This results in an incomplete etch, leaving a \\\"residue\\\" of chemically modified material (0.8 ML). In contrast, 100 eV ions have enough energy to sputter away nearly the entire modified layer, resulting in a cleaner surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies process drift and a loss of the \\\"self-limiting\\\" characteristic essential for ALE. If the residual chlorine accumulates with every cycle, the surface chemistry changes continuously, likely leading to variations in etch rate or surface roughness over time. A 500-cycle run would likely fail to meet tight tolerance specifications due to this cumulative error.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_15_fig_5.jpg","caption":"FIG. 5. Etch per cycle as a function of $\\mathsf{Ar}^+$ ion energy. For the \"High Fluence\" simulation results, one cycle corresponds to $2255\\mathrm{Cl}_2$ impacts and $1000\\mathrm{Ar}^+$ impacts, while for \"Low Fluence,\" one cycle corresponds to $2255\\mathrm{Cl}_2$ impacts and $68\\mathrm{Ar}^+$ impacts. Solid red circles are physical sputtering results from the MD simulations, open red circles are ALE results from the \"High Fluence\" MD simulations, and open red triangles are ALE results from the \"Low Fluence\" MD simulations. Solid blue squares are experimental physical sputtering results, while open blue squares are experimental ALE results, both from Park et al. (Ref. 11). The dotted lines indicate where the supposed ALE window is located from experimental results.","id":"train/atomic-layer-etching/simulation-usecase/15/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/15/fig_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":672,"height":461,"image_format":"jpeg","image_sha256":"3a57d83c51a33f658ea076b7ec2e33b7ebb4124c106d1be89463774605e885dd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":672,"height":461}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot represents that Atomic Layer Etching produces a much higher EPC than physical sputtering at the same ion energies, demonstrating the advantage of chlorine surface modification. An optimal “ALE window” (~70–90 eV) allows selective removal of the modified layer without damaging bulk silicon, while sufficient ion fluence is essential, as low fluence yields negligible etching despite chlorination. Etch per cycle is shown as a function of Ar⁺ ion energy. For the “High Fluence” simulation results, one cycle corresponds to 2255 Cl₂ impacts and 1000 Ar⁺ impacts, while for “Low Fluence,” one cycle corresponds to 2255 Cl₂ impacts and 68 Ar⁺ impacts. Solid red circles represent physical sputtering results from MD simulations, open red circles represent ALE results from the “High Fluence” MD simulations, and open red triangles represent ALE results from the “Low Fluence” MD simulations. Solid blue squares are experimental physical sputtering results, while open blue squares are experimental ALE results, both from Park et al. (Ref. 11). The dotted lines indicate the experimentally identified ALE window.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ar⁺ Energy (eV) | Etch per Cycle (Å/cycle) | Process / Condition |\\n|-----------------|--------------------------:|---------------------|\\n| 40 | 0.031 | Physical Sputtering (Simulation) |\\n| 40 | 0.458 | ALE (Simulation, High Fluence) |\\n| 40 | 0.181 | ALE (Simulation, Low Fluence) |\\n| 40 | 0 | Physical Sputtering (Experiment) |\\n| 40 | | ALE (Experiment) |\\n| 50 | 0.083 | Physical Sputtering (Simulation) |\\n| 50 | 0.5941 | ALE (Simulation, High Fluence) |\\n| 50 | 0.233 | ALE (Simulation, Low Fluence) |\\n| 50 | 0 | Physical Sputtering (Experiment) |\\n| 50 | | ALE (Experiment) |\\n| 60 | | Physical Sputtering (Simulation) |\\n| 60 | 0.739 | ALE (Simulation, High Fluence) |\\n| 60 | 0.205 | ALE (Simulation, Low Fluence) |\\n| 60 | 0.167 | Physical Sputtering (Experiment) |\\n| 60 | 0.233 | ALE (Experiment) |\\n| 70 | 0.289 | Physical Sputtering (Simulation) |\\n| 70 | 0.894 | ALE (Simulation, High Fluence) |\\n| 70 | | ALE (Simulation, Low Fluence) |\\n| 70 | 0.200 | Physical Sputtering (Experiment) |\\n| 70 | 1.105 | ALE (Experiment) |\\n| 80 | 0.425 | Physical Sputtering (Simulation) |\\n| 80 | 1.020 | ALE (Simulation, High Fluence) |\\n| 80 | | ALE (Simulation, Low Fluence) |\\n| 80 | 0.360 | Physical Sputtering (Experiment) |\\n| 80 | 1.076 | ALE (Experiment) |\\n| 90 | 0.598 | Physical Sputtering (Simulation) |\\n| 90 | 1.175 | ALE (Simulation, High Fluence) |\\n| 90 | | ALE (Simulation, Low Fluence) |\\n| 90 | | Physical Sputtering (Experiment) |\\n| 90 | | ALE (Experiment) |\\n| 100 | 0.763 | Physical Sputtering (Simulation) |\\n| 100 | 1.320 | ALE (Simulation, High Fluence) |\\n| 100 | | ALE (Simulation, Low Fluence) |\\n| 100 | 0.894 | Physical Sputtering (Experiment) |\\n| 100 | 1.316 | ALE (Experiment) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The \\\"Low Fluence\\\" step uses only 68 $Ar^+ impacts, which is mathematically insufficient to cover and clear the surface sites generated by the 2255 Cl₂ impacts.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 100 eV, the selectivity decreases because Physical Sputtering (uncontrolled removal) becomes a dominant fraction of the total etch. Operating at 70 eV maintains a larger gap between the ALE rate and the Sputtering rate (Solid Square is low, ~0.2 Å/cycle). This ensures the etching is primarily driven by chemical modification, not brute-force kinetic damage.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Chlorination weakens the surface binding energy. The adsorption of Chlorine atoms draws electron density away from the silicon-silicon backbonds, lowering the energy threshold required to break them. This allows the same 80 eV ions to remove significantly more material than they could from a pristine, unmodified surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Above the window, the physical sputtering component becomes too high, causing ions to penetrate and damage the underlying lattice even after the chlorinated layer is removed.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_15_fig_6.jpg","caption":"FIG. 6. Etch per cycle as a function of irradiation time for $70\\mathrm{eV}\\mathrm{Ar}^+$ ions. Red circles are from MD simulations, while blue squares are experimental results from Park et al. (Ref. 11). For the simulation results, the chlorination step consists of $2255\\mathrm{Cl}_2$ impacts, while for experiments $20\\mathrm{SCCM}$ of $\\mathrm{Cl}_2$ is supplied for $20\\mathrm{s}$ . It is assumed a $30\\mathrm{s}$ ion irradiation time corresponds to $1000$ impacts in the simulation. The dotted line is the experimentally saturated EPC (1.36 Å/cycle).","id":"train/atomic-layer-etching/simulation-usecase/15/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/15/fig_6","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":672,"height":506,"image_format":"jpeg","image_sha256":"444ca98bc4ccb0b32fa1a886272039174d539d9045f72c2fba4b3366ced57161","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":8,"width":670,"height":496}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot compares simulated and experimental etch per cycle (EPC) as a function of Ar⁺ ion irradiation time at 70 eV. Both datasets show EPC increasing with time before saturating, with the simulation (red circles) closely matching the trend and saturation value (~1.36 Å/cycle) of the experimental results (blue squares).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ar⁺ Irradiation (s) | Etch per Cycle (Å/cycle) | Source |\\n|--------------------|--------------------------:|-------------|\\n| 8 | 0.49 | Simulation |\\n| 8 | | Experiment |\\n| 10 | | Simulation |\\n| 10 | 0.20 | Experiment |\\n| 15 | 0.62 | Simulation |\\n| 15 | | Experiment |\\n| 20 | | Simulation |\\n| 20 | 0.97 | Experiment |\\n| 30 | 0.89 | Simulation |\\n| 30 | 1.12 | Experiment |\\n| 35 | | Simulation |\\n| 35 | 1.29 | Experiment |\\n| 37 | 1.06 | Simulation |\\n| 37 | | Experiment |\\n| 40 | | Simulation |\\n| 40 | 1.40 | Experiment |\\n| 45 | 1.02 | Simulation |\\n| 45 | 1.35 | Experiment |\\n| 50 | | Simulation |\\n| 50 | 1.37 | Experiment |\\n| 60 | 1.31 | Simulation |\\n| 60 | | Experiment |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Simulate the chlorination step with 2255 Cl₂ impacts.\\n\\n2. Simulate the bombardment step with Ar⁺ ions (70 eV) for a duration corresponding to the target irradiation time.\\n\\n3. Calculate the etch depth by comparing surface positions before and after the simulated cycle.\\nThe correlation (30 s ≈ 1000 impacts) calibrates the simulation's timescale to real-world tool parameters, enabling direct quantitative comparison between the model and physical experiment.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The close agreement validates the model's predictive power for this chemistry. It can rapidly and inexpensively screen irradiation times to identify the saturation point, significantly reducing the number of costly experimental trials needed for initial reactor recipe development.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"EPC increases with irradiation time then saturates. This occurs because the Ar⁺ ions can only remove the finite-thickness chlorinated (Si-Clₓ) layer created in the prior step. Once all the chlorinated material is sputtered away, additional ion bombardment does not increase the etch depth, leading to the observed saturation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies precise depth control is achievable. By running a calculated number of cycles (e.g., ~15 cycles), one can etch to a target depth of ~20 Å with atomic-scale accuracy. The self-limiting, saturating behavior ensures each cycle removes a consistent thickness, which is critical for such a shallow etch.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_12.jpg","caption":"Fig. 12. The vacuum pressure versus etching per cycle relationship for several substrate velocities.","id":"train/atomic-layer-etching/simulation-usecase/16/fig_12","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_12","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":661,"height":506,"image_format":"jpeg","image_sha256":"26d167579d142bc49248daa60ef3d50a47e794e27d8de6c9eb63335a9796650c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":662,"height":506}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between vacuum pressure (in Pa) and etching per cycle (in Å/cycle) at different speeds (60 mm/s, 90 mm/s, and 120 mm/s).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Vacuum pressure (Pa) | Etching per cycle (Å/cycle) 60mm/s |Etching per cycle (Å/cycle) 90mm/s |Etching per cycle (Å/cycle) 120mm/s |\\n|---|---|---|---|\\n|-200 | 0.37 |0.25|0.13|\\n|-150 | 0.40 |0.30|0.20|\\n|-100 | 0.40 |0.33|0.22|\\n|-50 | 0.40 |0.33|0.26|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the ideal case the vacuum pressure between the sample and the table does not have an influence on the trend. I.e. a straightline should be observed.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that the process gases are pumped away during the dosing, due to the low vacuum pressure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.41 Å/cycle and 0.33 Å/cycle respectively.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Linear increase\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_17_fig7.jpg","caption":"Fig.7. t t divided wafer in Fig. 2b to the bottom.","id":"train/atomic-layer-etching/simulation-usecase/17/fig7","sample_id":"atomic-layer-etching/simulation-usecase/17/fig7","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multiple scatter plot"},{"panel_id":"d","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/Multiscale computational fluid dynamics modeling of thermal atomic layer etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1222,"height":861,"image_format":"jpeg","image_sha256":"78201347ea2339d9d3d2b954e37f511f78db95d53a42153a7b1d9f0dca9b7062","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":0,"width":588,"height":399},{"panel_id":"b","x":627,"y":0,"width":584,"height":401},{"panel_id":"c","x":8,"y":472,"width":591,"height":386},{"panel_id":"d","x":624,"y":472,"width":587,"height":389}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The partial pressure of HF is plotted against substrate position for reactors G0 under different conditions. Each has four different dwell times (1.0 s, 0.3 s, 0.2 s, 0.1 s) represented by different markers.\"},{\"panel_id\":\"b\",\"text\":\"The partial pressure of HF is plotted against substrate position for reactors G1 under different conditions.\"},{\"panel_id\":\"c\",\"text\":\"The partial pressure of HF is plotted against substrate position for reactors G2 under different conditions.\"},{\"panel_id\":\"d\",\"text\":\"The partial pressure of HF is plotted against substrate position for reactors G3 under different conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Substrate Position | 0.1 s | 0.2 s | 0.3 s | 1.0 s |\\n|--------------------|-------|-------|-------|-------|\\n| 1 | 08 | 38 | 58 | 68 |\\n| 2 | 9 | 39 | 59 | 68 |\\n| 3 | 10 | 40 | 60 | 68 |\\n| 4 | 11 | 41 | 61 | 68 |\\n| 5 | 12 | 42 | 62 | 68 |\\n| 6 | 13 | 43 | 62 | 68 |\\n| 7 | 13 | 43 | 62 | 68 |\\n| 8 | 12 | 42 | 62 | 68 |\\n| 9 | 11 | 41 | 61 | 68 |\\n| 10 | 10 | 40 | 60 | 68 |\\n| 11 | 9 | 39 | 59 | 68 |\\n| 12 | 8 | 38 | 58 | 68 |\"},{\"panel_id\":\"b\",\"text\":\"| Substrate Position | 0.1 s | 0.2 s | 0.3 s | 1.0 s |\\n|--------------------|-------|-------|-------|-------|\\n| 1 | 08 | 38 | 58 | 68 |\\n| 2 | 9 | 39 | 59 | 68 |\\n| 3 | 10 | 40 | 60 | 68 |\\n| 4 | 11 | 41 | 61 | 68 |\\n| 5 | 12 | 42 | 62 | 68 |\\n| 6 | 13 | 43 | 62 | 68 |\\n| 7 | 13 | 43 | 62 | 68 |\\n| 8 | 12 | 42 | 62 | 68 |\\n| 9 | 11 | 41 | 61 | 68 |\\n| 10 | 10 | 40 | 60 | 68 |\\n| 11 | 9 | 39 | 59 | 68 |\\n| 12 | 8 | 38 | 58 | 68 |\"},{\"panel_id\":\"c\",\"text\":\"| Substrate Position | 0.1 s | 0.2 s | 0.3 s | 1.0 s |\\n|--------------------|-------|-------|-------|-------|\\n| 1 | 08 | 38 | 58 | 68 |\\n| 2 | 9 | 39 | 59 | 68 |\\n| 3 | 10 | 40 | 60 | 68 |\\n| 4 | 11 | 41 | 61 | 68 |\\n| 5 | 12 | 42 | 62 | 68 |\\n| 6 | 13 | 43 | 62 | 68 |\\n| 7 | 13 | 43 | 62 | 68 |\\n| 8 | 12 | 42 | 62 | 68 |\\n| 9 | 11 | 41 | 61 | 68 |\\n| 10 | 10 | 40 | 60 | 68 |\\n| 11 | 9 | 39 | 59 | 68 |\\n| 12 | 8 | 38 | 58 | 68 |\"},{\"panel_id\":\"d\",\"text\":\"| Substrate Position | 0.1 s | 0.2 s | 0.3 s | 1.0 s |\\n|--------------------|-------|-------|-------|-------|\\n| 1 | 08 | 38 | 58 | 68 |\\n| 2 | 9 | 39 | 59 | 68 |\\n| 3 | 10 | 40 | 60 | 68 |\\n| 4 | 11 | 41 | 61 | 68 |\\n| 5 | 12 | 42 | 62 | 68 |\\n| 6 | 13 | 43 | 62 | 68 |\\n| 7 | 13 | 43 | 62 | 68 |\\n| 8 | 12 | 42 | 62 | 68 |\\n| 9 | 11 | 41 | 61 | 68 |\\n| 10 | 10 | 40 | 60 | 68 |\\n| 11 | 9 | 39 | 59 | 68 |\\n| 12 | 8 | 38 | 58 | 68 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The reactor with the inclined plate (G3) has the most uniform flow pattern at every time step, in which the largest pressure deviation is 2.9 Pa at 0.2 s.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Among G0, G1 and G2, G2 reactor has uniform flow at the shortest time of 0.1s\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For every group (G0–G3), partial pressure increases strongly with longer HF pulse time: 0.1 s < 0.2 s < 0.3 s ≪ 1.0 s.\\nThe 1.0 s trace is near the upper limit (~68–70 Pa) and essentially flat. Across-substrate uniformity: Pressures are lower at the edges and higher near the center, especially at the shorter pulses (0.1–0.3 s). The center‑to‑edge difference is ~4–10 Pa depending on dose and group.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_24_fig10.jpg","caption":"Fig.10. Selective etching of TiN at $250^{\\circ}C$ using $\\mathrm{O_3}$ and HF in the presence of other surrounding materials of $\\mathrm{Al}_2\\mathrm{O}_3$ $\\mathrm{HfO_2}$ $\\mathrm{ZrO_2}$ $\\mathrm{SiO_2}$ and $\\mathrm{Si_3N_4}$ . Reproduced from Ref. [20].","id":"train/atomic-layer-etching/simulation-usecase/24/fig10","sample_id":"atomic-layer-etching/simulation-usecase/24/fig10","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/Review Paper -- Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":652,"height":509,"image_format":"jpeg","image_sha256":"0f857608ac03d50912cb75a65bd8a1e68093bc9d4fca8e3a4625459d1505d300","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":650,"height":501}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the film thickness of different materials (TiN, Al₂O₃, Si₃N₄, HfO₂, ZrO₂, and SiO₂) after 0 to 400 cycles. There is a linear decrease for TiN, while the others show a plateau.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | TiN | Al₂O₃ | Si₃N₄ | HfO₂ | ZrO₂ | SiO₂ |\\n|---|---|---|---|---|---|---|\\n| 0 | 75 | - | 40 | 55 | 50 | 50 |\\n| 100 | 50 | 50 | 40 | 55 | 50 | 50 |\\n| 200 | 35 | 50 | 40 | 55 | 50 | 50 |\\n| 300 | 20 | 48 | 40 | 55 | 50 | 50 |\\n| 400 | - | 42 | 40 | 55 | 50 | 50 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etching of TiN was studied at 250 °C in the presence of other materials such as Al2O3, Si3N4, HfO2, ZrO2, and SiO2, using O2 and HF.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film thickness of TiN decreases from approximately 75 Å to 20 Å as the number of cycles increases from 0 to 400.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen, the Si3N4 film, shows a slight increase in thickness that could be related to the growth of the material.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_24_fig_5.jpg","caption":"Fig. 5. Selective etching of $\\mathrm{Al_2O_3}$ , $\\mathrm{HfO_2}$ , $\\mathrm{ZrO_2}$ , $\\mathrm{SiO_2}$ , $\\mathrm{Si_3N_4}$ , and TiN by the metal ALE using fluorination and ligand-exchange reactions: (a) $\\mathrm{Sn(acac)}_2$ at $200^{\\circ}\\mathrm{C}$ and (b) TMA at $300^{\\circ}\\mathrm{C}$ . Reproduced from Ref. [29].","id":"train/atomic-layer-etching/simulation-usecase/24/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/24/fig_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/Review Paper -- Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1208,"height":472,"image_format":"jpeg","image_sha256":"14a33fd792402c20fc731655ec88d855f475ca813b8fc61bc58cef54a8b1f9a9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":631,"y":4,"width":573,"height":463},{"panel_id":"a","x":1,"y":3,"width":621,"height":467}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the changes on the film thickness of various materials (TiN, SiO_2, Si_3N_4, HfO_2, Al_2O_3, ZrO_2) over cycles with Sn(acac)2 at 200 °C.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the changes on the film thickness of various materials (TiN, SiO_2, Si_3N_4, HfO_2, Al_2O_3, ZrO_2) over cycles with TMA at 300 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | TiN | SiO_2 | Si_3N_4 | HfO_2 | Al_2O_3 | ZrO_2 |\\n|---|---|---|---|---|---|---|\\n| 0 | 70 | 50 | 40 | 50 | 48 | 50 | \\n| 100 | 70 | 50 | 40 | 48 | 20 | 40 | \\n| 200 | 70 | 50 | 40 | 45 | 0 | 30 | \\n| 300 | - | - | - | - | - | - | \\n| 400 | 70 | 50 | 40 | 38 | 0 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Cycles | TiN | SiO_2 | Si_3N_4 | HfO_2 | Al_2O_3 | ZrO_2 |\\n|---|---|---|---|---|---|---|\\n| 0 | 70 | 50 | 40 | 50 | 48 | 50 |\\n| 100 | - | - | - | 48 | 20 | 50 | \\n| 200 | - | - | - | 45 | 0 | 53 | \\n| 300 | - | - | - | - | - | - | \\n| 400 | 75 | 48 | 38 | 35 | 0 | 50 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film thickness for TiN remains approximately constant for the ALE cycle with Sn(acac)2, but increases for the ALE cycle with TMA.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film thickness was studied as a function of the number of cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of cycles increases the thickness of the HfO2, ZrO2 and Al2O3 film decreases, but the thickness of the TiN, SiO2 and Si3N4 films remains approximately constant.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the subfigure a, Al2O3 has the lowest film thickness at 100 and 200 cycles. Then, at 300 cycles, both Al2O3 and ZrO3 exhibit a value of 0.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_27_fig_10.jpg","caption":"FIG. 10. Atomic percentages of F, O, S, and C at the etched surface from XPS as a function of ALE cycles at $300^{\\circ}\\mathrm{C}$ . Lines are a guide to the eye.","id":"train/atomic-layer-etching/simulation-usecase/27/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/27/fig_10","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":523,"image_format":"jpeg","image_sha256":"7d4203d2e3fc71c45b8db07875f185d4938aca0c30b59898cbbec80ccec72bea","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":4,"width":674,"height":516}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the atomic percent of O1s, C1s, F1s, and S2p elements as a function of ALE cycles\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALE Cycles | O1s (at.%) | C1s (at.%) | F1s (at.%) | S2p (at.%) |\\n|---|---|---|---|---|\\n| 0 | 15.5 | 14.3 | 2.0 | 0.0 |\\n| 10 | 10.5 | 5.8 | 5.8 | 2.0 |\\n| 20 | 9.9 | 5.9 | 6.2 | 1.8 |\\n| 30 | 9.0 | 6.3 | 6.0 | 1.7 |\\n| 50 | 9.0 | 6.1 | 5.5 | 2.0 |\\n| 75 | 7.6 | 6.2 | 6.4 | 1.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both oxygen and carbon contamination decrease significantly during ALE processing. Oxygen drops from ~16 at.% to ~8 at.% while carbon decreases from ~14 at.% to ~6 at.%. Most of this reduction occurs within the first 10 ALE cycles, after which the concentrations stabilize. The continued decrease in oxygen with additional cycles reflects removal of the initially oxidized surface layer present on the as-deposited GaN film.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Fluorine increases due to residual fluorination from the SF6 plasma half-cycle used in the ALE process.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The sulfur content remains below 2 at.% throughout the ALE process, indicating minimal S incorporation from the SF6 plasma.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 6 at.%.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_27_fig_5.jpg","caption":"FIG. 5. Saturation curves at 150 and $300^{\\circ}\\mathrm{C}$ for (a) $\\mathrm{SF}_6$ plasma exposure using $10\\times 100\\mathrm{ms}$ TMA exposures and (b) varied number of $100\\mathrm{ms}$ TMA pulses with a $10\\mathrm{s}$ $\\mathrm{SF}_6$ plasma step, determined over 30 ALE cycles. Lines are guides for the eye.","id":"train/atomic-layer-etching/simulation-usecase/27/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/27/fig_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":497,"image_format":"jpeg","image_sha256":"1e113ad972d50cdcbb71c899949dd8438e8817b409c65ad77c1e2e150dd82304","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":5,"width":369,"height":491},{"panel_id":"b","x":380,"y":16,"width":291,"height":481}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Saturation curve for the SF6 plasma half-cycle showing EPC vs. plasma exposure time at 150°C and 300°C. Both temperatures show rapid initial increase followed by soft-saturation, reaching ~0.31 nm/cycle at 150°C and ~0.40 nm/cycle at 300°C after 10 s exposure.\"},{\"panel_id\":\"b\",\"text\":\"Saturation curve for the TMA half-cycle showing EPC vs. number of TMA pulses at 150°C and 300°C. Clear saturation is achieved at 300°C with 4 pulses (~0.40 nm/cycle), while 150°C requires more pulses to reach saturation (~0.31 nm/cycle).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| SF₆ plasma time (s) | 300°C (nm/cycle) | 150°C (nm/cycle) |\\n|---|---|---|\\n| 0 | 0.00 | 0.00 |\\n| 1 | 0.26 | - |\\n| 2 | 0.33 | 0.16 |\\n| 5 | 0.38 | 0.27 |\\n| 10 | 0.40 | 0.31 |\\n| 15 | 0.40 | 0.32 |\\n| 30 | 0.42 | 0.35 |\"},{\"panel_id\":\"b\",\"text\":\"| TMA pulses | 300°C (nm/cycle) | 150°C (nm/cycle) |\\n|---|---|---|\\n| 0 | 0.00 | 0.00 |\\n| 1 | -0.01 | - |\\n| 2 | 0.39 | 0.02 |\\n| 3 | 0.40 | - |\\n| 4 | 0.40 | 0.27 |\\n| 5 | 0.40 | 0.25 |\\n| 6 | - | 0.31 |\\n| 7 | 0.40 | - |\\n| 10 | 0.40 | 0.31 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Lower temperature inhibits fluorine diffusion into the GaN, resulting in a thinner fluorinated layer and thus a lower EPC.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10 s was chosen because the EPC increases by only 0.02 nm/cycle when extending to 30 s, which is within experimental error.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.40 ± 0.02 nm/cycle.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SF6 plasma step shows soft-saturation with a gradual increase in EPC even at longer exposure times, attributed to diffusion-limited fluorination following Deal-Grove kinetics. The TMA step shows clear, sharp saturation once sufficient pulses are provided. This difference reflects the distinct mechanisms: diffusion-controlled surface modification for fluorination vs. self-limiting ligand-exchange reactions for TMA.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_27_fig_7.jpg","caption":"FIG. 7. GaN EPC as a function of table temperature. Data for $\\mathrm{Al}_2\\mathrm{O}_3$ ALE using the same $\\mathrm{SF}_6$ plasma/TMA chemistry are shown from our previous work. Thermal GaN ALE with $\\mathrm{XeF}_2 / \\mathrm{BCl}_3$ is also included in the plot. Lines are guides to the eye.","id":"train/atomic-layer-etching/simulation-usecase/27/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/27/fig_7","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":666,"height":552,"image_format":"jpeg","image_sha256":"67ca83bd80303cdca4119a15ca5d627dc21e8757ed79517f3c28976757f7663b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":5,"width":663,"height":544}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the EPC (nm/cycle) of Plasma ALE GaN, Plasma ALE Al₂O₃, and Thermal ALE GaN at various temperatures. The data points are connected by lines, indicating trends over temperature\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Plasma ALE GaN (nm/cycle) | Plasma ALE Al₂O₃ (nm/cycle) | Thermal ALE GaN (nm/cycle) |\\n|---|---|---|---|\\n| 100 | -0.01 | - | - |\\n| 125 | 0.21 | - | - |\\n| 150 | 0.33 | - | - |\\n| 170 | - | - | 0.02 |\\n| 175 | 0.35 | -0.01 | - |\\n| 185 | - | - | 0.03 |\\n| 200 | 0.36 | 0.02 | 0.05 |\\n| 225 | 0.37 | 0.08 | - |\\n| 250 | 0.39 | 0.21 | 0.06 |\\n| 275 | 0.40 | 0.27 | - |\\n| 300 | 0.43 | 0.29 | 0.07 |\\n| 325 | - | 0.30 | - |\\n| 350 | - | 0.31 | - |\\n| 375 | - | 0.34 | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Plasma ALE provides significantly higher etch rates (0.31-0.43 nm/cycle vs. ~0.07 nm/cycle for thermal ALE) and operates over a wider temperature range. This is attributed to the higher reactivity of fluorine radicals compared to thermal XeF2, enabling more effective fluorination of the GaN surface. The wider temperature window also provides greater process flexibility.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 150 and 200°C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"AlF3 ALD growth dominates over the ALE reaction, resulting in net film deposition instead of etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It increases linearly with temperature from 0.31 nm/cycle at 150°C to 0.43 nm/cycle at 300°C.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_32_fig_5.jpg","caption":"FIG. 5. The reaction energy variations (a) and the maximum reaction energies (b) obtained from the sequential etching events of routes 1-3.","id":"train/atomic-layer-etching/simulation-usecase/32/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/32/fig_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/Understanding time-resolved processes in atomic-layer etching of ultra-thin Al2O3 film.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":609,"height":825,"image_format":"jpeg","image_sha256":"d49a97aac60869c5ac255f91ba8ba448bb51b250a6d509a1acad1bb4227af237","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":606,"height":423},{"panel_id":"b","x":96,"y":435,"width":421,"height":387}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the energy changes at various reaction steps for three routes (Route 1, Route 2, and Route 3). Each route shows a distinct trend in energy increase.\"},{\"panel_id\":\"b\",\"text\":\"The bar chart compares the maximum energy achieved by three routes (Route 1, Route 2, and Route 3). Route 3 has the highest maximum energy\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | Route 1 (eV) | Route 2 (eV) | Route 3 (eV) |\\n|---|---|---|---|\\n| 0 | 0.0 | 0.0 | 0.0 |\\n| 1 | 5.4 | 4.0 | 13.0 |\\n| 2 | 7.8 | 11.5 | 11.0 |\\n| 3 | 10.8 | 13.5 | 22.0 |\\n| 4 | - | 20.5 | 29.0 |\\n| 5 | - | 22.5 | 34.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Route | Maximum Energy (eV) |\\n|---|---|\\n| Route 1 | 5.4 |\\n| Route 2 | 7.3 |\\n| Route 3 | 12.9 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Route 1 uses squares, Route 2 uses circles, Route 3 uses triangles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They denote the surface moiety or atom removed at that etching event in the sequence for each route.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Route 3 has the highest maximum reaction energy.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Routes 1 and 2 represent ALET on a BCl3 adsorbed surface and have much lower maximum reaction energies than route 3, which represents conventional plasma etching of pristine Al2O3. This supports the paper’s conclusion that BCl3 presorption reduces the energetic requirement for etching, which in turn can reduce the required Ar kinetic energy for effective removal. The authors also note that changing the etching event sequence can raise the maximum energy toward the conventional plasma etching level, so sequence control matters.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_2bf83ee5d0350bda7054684c907c864234acb978fe3ffba9b23eba42a75a8833.jpg","caption":"(a)","id":"train/atomic-layer-etching/simulation-usecase/33/2bf83ee5d0350bda7054684c907c864234acb978fe3ffba9b23eba42a75a8833","sample_id":"atomic-layer-etching/simulation-usecase/33/2bf83ee5d0350bda7054684c907c864234acb978fe3ffba9b23eba42a75a8833","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/2bf83ee5d0350bda7054684c907c864234acb978fe3ffba9b23eba42a75a8833.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/2bf83ee5d0350bda7054684c907c864234acb978fe3ffba9b23eba42a75a8833.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":295,"height":222,"image_format":"jpeg","image_sha256":"93e8bdd52c6f7573ed91a82727623170b483a917d47054fa6fe48bca72966ecb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":295,"height":222}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure depicts the evolution of surface-bound species on silicon under increasing HF (hydrofluoric acid) dose, showing the number density per square nanometer (Nᵢ) for unfluorinated Si and various fluorinated forms: SiF, SiF₂, and SiF₃. Initially, the surface is composed entirely of unfluorinated Si species (~28 nm⁻²), but with increasing HF exposure, the density of fluorinated species grows. SiF appears first, followed by SiF₂ and SiF₃, suggesting a stepwise fluorination mechanism. The density of each fluorinated species eventually saturates, while the total Si-related surface density remains roughly constant, indicating that fluorination modifies the surface rather than etching it away.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Dose (HF/nm²) | Si (nm⁻²) | SiF (nm⁻²) | SiF₂ (nm⁻²) | SiF₃ (nm⁻²) |\\n|---------------|-----------|------------|-------------|-------------|\\n| 0 | 28 | 0 | 0 | 0 |\\n| 50 | 26 | 5 | 3 | 2 |\\n| 100 | 26 | 7 | 4 | 3 |\\n| 150 | 26 | 8 | 4 | 3 |\\n| 200 | 26 | 8 | 4 | 3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the HF dose increases, the number density of unfluorinated surface Si atoms decreases, while the densities of fluorinated species (SiF, SiF₂, and SiF₃) increase. The total surface species density remains approximately constant, suggesting a substitutional process where fluorine atoms progressively bond with silicon to form higher fluorinated states. SiF forms first and dominates at lower doses, followed by SiF₂ and SiF₃, which appear and saturate at higher doses\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiF.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Surface fluorination proceeds in a stepwise manner, Si to SiF to SiF₂ to SiF₃, SiF is dominant at low HF doses, SiF₂ and SiF₃ emerge and saturate later\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_figure_12.jpg","caption":"Figure 12. Evolution of populations of surface species $(N_{i})$ in the modified layer as a function of HF dose. The solid lines are the results of 1D continuum model while symbols are directly obtained from MD simulations with $E_{\\mathrm{in}}$ of $50~\\mathrm{eV}$ and $\\theta_{\\mathrm{in}}$ of $0^{\\circ}$ . Panel (a) depicts the population change of silicon fluoride species, namely $\\mathrm{SiF_0}$ , $\\mathrm{SiF_1}$ , $\\mathrm{SiF_2}$ , and $\\mathrm{SiF_3}$ . Panel (b) illustrates the changes in ammonia-derived species, specifically $\\mathrm{NH_0}$ , $\\mathrm{NH_1}$ , and $\\mathrm{NH_2}$ . Panel (c) presents the ratio of N to Si, with the dashed line indicating the bulk stoichiometry of 1.33. (b) (c)","id":"train/atomic-layer-etching/simulation-usecase/33/figure_12","sample_id":"atomic-layer-etching/simulation-usecase/33/figure_12","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":298,"height":225,"image_format":"jpeg","image_sha256":"bec9ee4d32b85c2e0d83cc5cb1122ac0c9bd7d4039f2421cc721c583e841908d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":298,"height":225}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure plots the evolution of various nitrogen-containing surface species as a function of HF dose, measured in molecules per square nanometer (Nᵢ, nm⁻²). The total nitrogen concentration (N) initially drops with HF exposure, suggesting removal or conversion, but then stabilizes around 30 nm⁻². NH₀ (neutral nitrogen) shows a slight decline, while NH₁ and NH₂ exhibit clear increasing trends. This suggests that as HF dose increases, nitrogen becomes increasingly hydrogenated, forming amine-like species. The saturation of NH₁ and NH₂ levels beyond ~100 HF/nm² implies a steady-state surface composition. The figure highlights the chemical evolution of surface-bound nitrogen species during HF exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Dose (HF/nm²) | N (nm⁻²) | NH₀ (nm⁻²) | NH₁ (nm⁻²) | NH₂ (nm⁻²) |\\n|---------------|-----------|-------------|-------------|-------------|\\n| 0 | 35 | 10 | 0 | 0 |\\n| 50 | 30 | 8 | 5 | 2 |\\n| 100 | 28 | 7 | 7 | 3 |\\n| 150 | 30 | 7 | 9 | 4 |\\n| 200 | 32 | 8 | 9 | 5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure shows that atomic nitrogen (N) initially decreases in surface concentration with increasing HF dose but then plateaus, indicating partial consumption or transformation. In contrast, NH₁ and NH₂ species increase steadily with dose, suggesting progressive hydrogenation of nitrogen as HF exposure continues. NH₀ decreases slightly over time. These trends point to a surface reaction pathway where nitrogen becomes increasingly substituted with hydrogen, possibly due to HF-mediated surface reactions leading to NHₓ termination.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"NH₁.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"HF exposure hydrogenates nitrogen , Atomic nitrogen partially converts to NH₁ and NH₂ species, Surface nitrogen composition stabilizes beyond ~100 HF/nm².\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_12.jpg","caption":"FIG. 12. Normalized atomic Si counts as a function of $\\mathsf{Ar}^+$ fluence for various $\\mathsf{Ar}^+$ energies. Subfigure (a) shows the results for OES experiments (using the modified OES Si signals) and subfigure (b) shows results from MD ALE simulations. For both the OES and MD results, the counts are normalized using the value at the plateau observed at $80 \\text{eV}$ .","id":"train/atomic-layer-etching/simulation-usecase/6/fig_12","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_12","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1409,"height":461,"image_format":"jpeg","image_sha256":"439d19372330cea38a84c74679b08c5ad0c1abf44dd3695599bf2d8a19bd3818","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":2,"width":679,"height":458},{"panel_id":"b","x":721,"y":3,"width":687,"height":457}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Panel (a) shows experimental measurements of Si count as a function of Ar⁺ ion dosage for three incident energies. The Si signal is consistently highest at 215 eV and increases with dosage before saturating, while the 80 eV signal shows a moderate rise and 45 eV shows negligible counts.\"},{\"panel_id\":\"b\",\"text\":\"Panel (b) presents Monte Carlo simulation results for the same ion energies and dosages. The simulated Si counts for 215 eV also show a plateauing behavior at higher dosages, though with more fluctuations and slightly different relative magnitudes compared to the experimental data\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion Dosage (Ar⁺/cm²) × 10¹⁵ | 45 eV | 80 eV | 215 eV |\\n|----------------------------|-------|-------|--------|\\n| 0 | 0 | 0 | 2 |\\n| 10 | 0 | 0.5 | 4 |\\n| 20 | 0 | 1 | 5 |\\n| 30 | 0 | 1.5 | 6 |\\n| 40 | 0 | 2 | 7 |\\n| 50 | 0 | 2.5 | 8 |\"},{\"panel_id\":\"b\",\"text\":\"| Ion Dosage (Ar⁺/cm²) × 10¹⁵ | 45 eV | 80 eV | 215 eV |\\n|----------------------------|-------|-------|--------|\\n| 0 | 5 | 0.5 | 6 |\\n| 10 | 6 | 1 | 7 |\\n| 20 | 7 | 1.5 | 8 |\\n| 30 | 6 | 2 | 7 |\\n| 40 | 7 | 2.5 | 6 |\\n| 50 | 6 | 3 | 6 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"215 eV\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"More fluctuation in simulation, Clearer plateau in experiment, Smoother experimental curves with simulation error bars\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"between experiment and simulation allows researchers to validate modeling accuracy and adjust physical parameters like ion energy and dose for surface processing. Since 215 eV consistently leads to higher and saturating Si counts, this suggests it may be the most effective energy for maximising surface modification efficiency.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_13.jpg","caption":"FIG. 13. Normalized SiCl counts as a function of $\\mathsf{Ar}^+$ fluence for various $\\mathsf{Ar}^+$ energies. Subfigure (a) shows the results for OES experiments and subfigure (b) shows results from MD ALE simulations. For both the OES and MD results, the counts are normalized using the value at the peak observed at $80 \\text{eV}$ .","id":"train/atomic-layer-etching/simulation-usecase/6/fig_13","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_13","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1411,"height":458,"image_format":"jpeg","image_sha256":"71675471e5b0aa7813bf2f4b7d1241db9155b047e40e258cd3a1ada3b0030d18","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":10,"width":682,"height":448},{"panel_id":"b","x":725,"y":10,"width":686,"height":448}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The pair of scatter plots show the experimental (left) and MD-simulated (right) SiCl count as a function of Ar⁺ ion dosage for three ion energies: 45 eV, 80 eV, and 215 eV. In both cases, the SiCl count decreases with increasing dosage, with the highest initial counts observed at 215 eV. The simulation matches the trend seen experimentally, though the absolute counts differ. Error bars are shown for each data point\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion Dosage (Ar+/cm2) × 1015 | 45 eV | 80 eV | 215 eV |\\n|---|---|---|---|\\n| 0 | 0.75 | 0.90 | 1.60 |\\n| 5 | 0.60 | 0.70 | 0.80 |\\n| 10 | 0.55 | 0.60 | 0.70 |\\n| 15 | 0.50 | 0.55 | 0.60 |\\n| 20 | 0.45 | 0.50 | 0.55 |\\n| 25 | 0.40 | 0.45 | 0.50 |\\n| 30 | 0.35 | 0.40 | 0.45 |\\n| 35 | 0.30 | 0.35 | 0.40 |\\n| 40 | 0.25 | 0.30 | 0.35 |\\n| 45 | 0.20 | 0.25 | 0.30 |\\n| 50 | 0.15 | 0.20 | 0.25 |\"},{\"panel_id\":\"b\",\"text\":\"| Ion Dosage (Ar+/cm2) × 1015 | 45 eV | 80 eV | 215 eV |\\n|---|---|---|---|\\n| 0 | 1.80 | 1.00 | 1.70 |\\n| 5 | 0.50 | 0.40 | 0.30 |\\n| 10 | 0.30 | 0.25 | 0.20 |\\n| 15 | 0.20 | 0.15 | 0.10 |\\n| 20 | 0.15 | 0.10 | 0.05 |\\n| 25 | 0.10 | 0.05 | 0.02 |\\n| 30 | 0.05 | 0.02 | 0.01 |\\n| 35 | 0.02 | 0.01 | 0.00 |\\n| 40 | 0.01 | 0.00 | 0.00 |\\n| 45 | 0.00 | 0.00 | 0.00 |\\n| 50 | 0.00 | 0.00 | 0.00 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ion dosage (Ar⁺/cm² × 10¹⁵), Ion energy (45 eV, 80 eV, 215 eV), Simulation vs. experimental conditions\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"215 eV\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reduction in SiCl count with increasing ion dosage suggests a depletion of reactive surface species over time, which can lead to reduced etch efficiency or modification effectiveness during plasma processing. This implies that optimising ion energy and controlling dosage are crucial for sustaining high etch rates or achieving consistent surface functionalistion, especially in processes where product formation (like SiCl) is critical for chemical transport or material removal.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_14.jpg","caption":"FIG. 14. Normalized $\\mathrm{SiCl}_2$ counts as a function of $\\mathsf{Ar}^+$ fluence for various $\\mathsf{Ar}^+$ energies. Subfigure (a) shows the results for OES experiments and subfigure (b) shows results from MD ALE simulations. For both the OES and MD results, the counts are normalized using the value at the peak observed at $80\\mathrm{eV}$","id":"train/atomic-layer-etching/simulation-usecase/6/fig_14","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_14","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1409,"height":461,"image_format":"jpeg","image_sha256":"ee1cace633e6b9d3fe928416e7fe4aade6bf506addaa6f6803854fd65d45fb11","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":10,"width":683,"height":451},{"panel_id":"b","x":725,"y":9,"width":684,"height":452}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The experimental scatter plot shows that the SiCl₂ count decreases as ion dosage increases for all energy levels (45 eV, 80 eV, 215 eV). The highest counts are seen at 215 eV, while the lowest are at 45 eV. After ~30×10¹⁵ Ar⁺/cm², the counts plateau, indicating a saturation or steady-state regime.\"},{\"panel_id\":\"b\",\"text\":\"The MD simulation panel reflects a similar trend to the experiment: initial steep decrease in SiCl₂ count, more prominent at higher energies. Notably, the simulated values begin at a slightly higher range than experimental values and converge more rapidly with dosage\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion Dosage (Ar⁺/cm²) × 10¹⁵ | 45 eV | 80 eV | 215 eV |\\n|-----------------------------|--------|--------|---------|\\n| 0 | 1.2 | 1.4 | 1.6 |\\n| 5 | 0.9 | 1.1 | 1.3 |\\n| 10 | 0.7 | 0.9 | 1.1 |\\n| ... | ... | ... | ... |\"},{\"panel_id\":\"b\",\"text\":\"| Ion Dosage (Ar⁺/cm²) × 10¹⁵ | 45 eV | 80 eV | 215 eV |\\n|-----------------------------|--------|--------|---------|\\n| 0 | 1.30 | 1.75 | 2.1 |\\n| 5 | 0.80 | 1.20 | 1.4 |\\n| 10 | 0.55 | 0.85 | 1.0 |\\n| 15 | 0.45 | 0.70 | 0.85 |\\n| 20 | 0.40 | 0.60 | 0.78 |\\n| 25 | 0.35 | 0.55 | 0.72 |\\n| 30 | 0.30 | 0.50 | 0.65 |\\n| 35 | 0.28 | 0.48 | 0.60 |\\n| 40 | 0.27 | 0.46 | 0.58 |\\n| 45 | 0.26 | 0.45 | 0.56 |\\n| 50 | 0.25 | 0.45 | 0.55 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ion energy transfer, Surface atom displacement, SiCl₂ formation and ejection, Yield reduction with dose\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In both experimental and simulated datasets, the SiCl₂ count decreases with increasing ion dosage for all ion energies. The rate of decrease is steepest between 0 and 15×10¹⁵ Ar⁺/cm², after which the counts stabilize, indicating a saturation effect. Higher ion energies (e.g., 215 eV) consistently produce more SiCl₂ than lower energies like 45 eV, reflecting enhanced sputtering or reaction yields under more energetic conditions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"215 eV\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_8.jpg","caption":"FIG. 8. Etch per cycle (EPC) in units of nm/cycle for experiments (black squares) and MD simulations (red triangles) as a function of $\\mathsf{Ar}^+$ energy. Error bars represent $95\\%$ confidence intervals.","id":"train/atomic-layer-etching/simulation-usecase/6/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_8","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":541,"height":406,"image_format":"jpeg","image_sha256":"ef965570706f3f426f8d50c050d0f7c76aedd7bf6ba623ebdf0504a6399feec2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":541,"height":406}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot compares the EPC (etching per cycle) values measured experimentally and via MD simulations across a range of ion energies. Both datasets exhibit a positive correlation between ion energy and EPC, indicating that higher ion energies lead to more effective etching. However, the experimental EPC values increase more rapidly and reach higher maximum values than those predicted by MD simulations. This suggests that simulations may underestimate etch rates due to idealised conditions, or that experimental conditions involve synergistic effects not captured in the model. The discrepancy becomes more pronounced above ~100 eV, highlighting the importance of validating simulations against experimental benchmarks\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion Energy (eV) | EPC (Experiments, nm/cycle) | EPC (MD Simulations, nm/cycle) |\\n|-----------------|-----------------------------|---------------------------------|\\n| 0 | 0.0 | 0.0 |\\n| 25 | 0.3 | 0.1 |\\n| 50 | 0.6 | 0.2 |\\n| 75 | 1.2 | 0.6 |\\n| 100 | 2.2 | 1.2 |\\n| 125 | 3.2 | 1.8 |\\n| 150 | 4.3 | 2.2 |\\n| 175 | 5.5 | 2.6 |\\n| 200 | 6.4 | 3.0 |\\n| 225 | 7.0 | 3.4 |\\n| 250 | 7.5 | 3.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both experimental and simulation results show increasing EPC with rising ion energy, indicating enhanced etching efficiency. However, the experimental data consistently show higher EPC values than the simulations, especially beyond 100 eV. This suggests either additional synergistic effects in the experiment or limitations in the simulation model, such as neglect of secondary ion effects or surface roughness.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 100 eV\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Higher momentum transfer, Increased sputtering yield, Enhanced bond breaking, Deeper penetration for bulk removal.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_8_fig_10.jpg","caption":"FIG. 10. Atomic percentages of F, O, S, and C at the etched surface from XPS as a function of ALE cycles at $300^{\\circ}\\mathrm{C}$ . Lines are a guide to the eye.","id":"train/atomic-layer-etching/simulation-usecase/8/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/8/fig_10","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/Isotropic atomic layer etching of GaN using SF6 plasma and AI(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":672,"height":523,"image_format":"jpeg","image_sha256":"7d4203d2e3fc71c45b8db07875f185d4938aca0c30b59898cbbec80ccec72bea","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":666,"height":517}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the atomic percent of O1s, C1s, F1s, and S2p elements as a function of ALE cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALE cycles | O1s | C1s | F1s | S2p |\\n|---|---|---|---|---|\\n| 0 | 15 | 14 | 2 | 0 |\\n| 10 | 10 | 6 | 6 | 2 |\\n| 20 | 10 | 6 | 6 | 2 |\\n| 30 | 9 | 6 | 6 | 2 |\\n| 50 | 9 | 6 | 6 | 2 |\\n| 70 | 8 | 6 | 6 | 2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ALE process removes oxygen and carbon species.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The atomic percentage together do not add up till 100%, this means that there are more species in the film not in the graph.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"30 ALE cycles are required.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is likely that gases such as SF6 are used which remain in the film.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_8_fig_3.jpg","caption":"FIG. 3. (a) Contributions of Ga-O and Ga-N to the Ga3d peak area plotted as a function of sputter depth. The vertical dashed line indicates the spectra shown in (b). (b) The Ga3d signal after $20\\mathrm{s}$ of sputtering, highlighting the positions of the Ga-O and the Ga-N peaks at $20.5$ and $19.3\\mathrm{eV}$ , respectively.","id":"train/atomic-layer-etching/simulation-usecase/8/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/8/fig_3","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/Isotropic atomic layer etching of GaN using SF6 plasma and AI(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":666,"height":439,"image_format":"jpeg","image_sha256":"0fbb2af112ef01912077536debaaf5db30ba88d38524a44e12689328bc495902","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":12,"width":346,"height":427},{"panel_id":"b","x":384,"y":12,"width":282,"height":427}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the peak area of XPS signals for Ga-N and Ga-O as a function of sputter depth.\"},{\"panel_id\":\"b\",\"text\":\"The spectrum displays the XPS counts at various binding energies for Ga-N and Ga-O.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sputter depth (nm)| Peak area (CPS eV) Ga-O| Peak area (CPS eV) Ga-N|\\n|---|---|---|\\n| 0 | 4000 |0|\\n|5|1300|4500|\\n|10|1000|5000|\\n|15|1000|5000|\\n|20|1000|5000|\\n|25|0|5700|\\n|30|0|6000|\\n|35|0|5700|\\n|40|0|500|\"},{\"panel_id\":\"b\",\"text\":\"| Binding energy (eV) | XPS counts (a.u.) |\\n|---|---|\\n| 14 | 0 |\\n| 16 | 0 |\\n| 18 | 0.3 |\\n| 20 | 2 |\\n| 22 | 0.3 |\\n| 24 | 0 |\\n| 26 | 0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The envelope, which is a result of the two contributions together does not fully overlap with the measured spectrum indicating that the fit is not fully accurate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Nitrogen is more present, at least in the form where it is bonded to gallium.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"From 25 nm and deeper.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Depth profiles with XPS are known to influence material properties. During the sputtering binding states can change and shift, so it is possible that the film has been altered due to the measurement.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_8_fig_5.jpg","caption":"FIG. 5. Saturation curves at 150 and $300^{\\circ}\\mathrm{C}$ for (a) $\\mathrm{SF}_6$ plasma exposure using $10\\times 100\\mathrm{ms}$ TMA exposures and (b) varied number of $100\\mathrm{ms}$ TMA pulses with a $10\\mathrm{s}$ $\\mathrm{SF}_6$ plasma step, determined over 30 ALE cycles. Lines are guides for the eye.","id":"train/atomic-layer-etching/simulation-usecase/8/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/8/fig_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/Isotropic atomic layer etching of GaN using SF6 plasma and AI(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":672,"height":497,"image_format":"jpeg","image_sha256":"1e113ad972d50cdcbb71c899949dd8438e8817b409c65ad77c1e2e150dd82304","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":387,"y":4,"width":284,"height":491},{"panel_id":"a","x":1,"y":4,"width":371,"height":491}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between SF₆ plasma time and EPC (nm/cycle) at two temperatures, 300°C and 150°C.\"},{\"panel_id\":\"b\",\"text\":\"The line chart illustrates the relationship between TMA pulses and EPC (nm/cycle) at two temperatures, 300°C and 150°C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| SF₆ plasma time (s) | EPC (nm/cycle) 300 degrees |EPC (nm/cycle) 150 degrees |\\n|---|---|---|\\n| 0 | 0.0 |0.0|\\n| 5 | 0.37 |0.27|\\n| 10 | 0.4 |0.3|\\n| 15 | 0.41 |0.31|\\n| 30 | 0.41 |0.35|\"},{\"panel_id\":\"b\",\"text\":\"| TMA pulses | EPC (nm/cycle) 300 degrees |EPC (nm/cycle) 150 degrees |\\n|---|---|---|\\n| 0 | 0.4 |0.0|\\n| 2 | 0.4 |0.05|\\n| 4 | 0.4 |0.25|\\n| 6 | 0.4 |0.31|\\n| 10 | 0.4 |0.31|\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The main physical parameter that is changed upon increasing the number of TMA pulses which is the partial pressure of TMA. Increasing this will increase the reaction possibility.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The maximum EPC is 0.31 nm/cycle.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that the penetration depth of the radical species increases for increasing temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There is no straight line for increasing plasma time, this looks like soft-saturation.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_8_fig_7.jpg","caption":"FIG. 7. GaN EPC as a function of table temperature. Data for $\\mathrm{Al}_2\\mathrm{O}_3$ ALE using the same $\\mathrm{SF}_6$ plasma/TMA chemistry are shown from our previous work. Thermal GaN ALE with $\\mathrm{XeF}_2 / \\mathrm{BCl}_3$ is also included in the plot. Lines are guides to the eye.","id":"train/atomic-layer-etching/simulation-usecase/8/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/8/fig_7","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/Isotropic atomic layer etching of GaN using SF6 plasma and AI(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":666,"height":552,"image_format":"jpeg","image_sha256":"67ca83bd80303cdca4119a15ca5d627dc21e8757ed79517f3c28976757f7663b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":4,"width":659,"height":547}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the EPC (nm/cycle) of Plasma ALE GaN, Plasma ALE Al₂O₃, and Thermal ALE GaN at various temperatures. The data points are connected by lines, indicating trends over temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Plasma ALE GaN | Plasma ALE Al₂O₃ | Thermal ALE GaN |\\n|-----------------|----------------|------------------|----------------|\\n| 100 | 0.0 | 0.0 | 0.0 |\\n| 150 | 0.2 | 0.0 | 0.0 |\\n| 200 | 0.3 | 0.0 | 0.05 |\\n| 250 | 0.4 | 0.2 | 0.1 |\\n| 300 | 0.4 | 0.3 | 0.1 |\\n| 350 | 0.4 | 0.3 | 0.1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes there is a selectivity window between 100 and 175 degrees celcius, so GaN can be etched selectively wrt Al2O3.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plasma process yields way higher etch per cycle for lower temperatures.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increase the temperature when etching Al2O3 instead of GaN.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"375 degrees would yield the highest EPC.\"}]}]"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_12_fig_5.jpg","caption":"Fig. 5. Normalized integrated absorbances of the W-F stretching vibration at $\\sim 680~\\mathrm{cm^{-1}}$ and the $\\mathrm{Si - H}$ stretching vibrations at 2115 and $2275~\\mathrm{cm^{-1}}$ versus $\\mathrm{WF}_6$ exposure during the $\\mathrm{WF}_6$ half-reaction at $425\\mathrm{K}$ .","id":"train/atomic-layer-deposition/experimental-usecase/12/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/12/fig_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This mulitple line plot represents the normalized, integrated absorbance of key IR vibrations (W–F stretch and Si–H stretches) against the total WF₆ exposure (Pressure * Time) during the WF₆ half-reaction at 425 K. It shows the Si–H signal decaying and the W–F signal growing as exposure increases, both saturating at high exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| WF6 Exposure (Torr·min) | Normalized Integrated Absorbance | Stretch |\\n|-----------------------------------|----------------------------------|---------------|\\n| 0.0 | 0.0 | W–F Stretch |\\n| 0.0 | 0.0 | Si–H Stretch |\\n| 0.1 | 0.9 | W–F Stretch |\\n| 0.1 | 0.1 | Si–H Stretch |\\n| 0.2 | 0.95 | W–F Stretch |\\n| 0.2 | 0.08 | Si–H Stretch |\\n| 0.4 | 1.0 | W–F Stretch |\\n| 0.4 | 0.03 | Si–H Stretch |\\n| 0.6 | 1.0 | W–F Stretch |\\n| 0.6 | 0.03 | Si–H Stretch |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Normalized integrated absorbance is a measure of the total area under an FTIR absorption peak after scaling it relative to a reference value. It is obtained by integrating the absorbance intensity across the specific wavenumber range associated with a vibrational mode. The resulting value is then divided by a chosen baseline or maximum signal so that different spectra can be compared on the same scale.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The W–F curve rises exactly as the Si–H curve falls, proving each new tungsten-fluoride bond directly replaces a silicon-hydride bond. Both curves saturate at the same exposure, confirming the reaction is self-limiting and consumes a fixed number of surface sites. This perfect mirroring shows the half-reaction is complete, reproducible, and ideal for controlled atomic-layer deposition.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface structure transitions completely from Si–H termination to W–F termination as WF₆ exposure increases to the saturation point. The concurrent and complementary nature of the Si–H decay and W–F growth indicates a direct, one-to-one replacement reaction. The saturation of both signals at the same exposure value suggests the reaction consumes a fixed number of surface Si–H sites to produce a corresponding number of W–F sites, defining the stoichiometry of the surface-limited process.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This provides exceptional conformality on high-aspect-ratio 3D structures, a critical advantage. Because the reaction saturates once all surface sites are consumed, it proceeds equally on all exposed surfaces, regardless of geometry. The film property controlled with atomic-scale precision is thickness, as each ALD cycle adds a reproducible, sub-nanometer layer, enabling exact deposition in nanoscale device features.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":596,"height":576}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/J.W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":600,"height":581,"image_format":"jpeg","image_sha256":"841faa92a4f9945fa27694499581b9817dd445b12852d5cc27def86e0f38d093","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_12_fig_7.jpg","caption":"Fig. 7. Normalized integrated absorbances of the W-F stretching vibration at $\\sim 680 \\mathrm{cm}^{-1}$ and the $\\mathrm{Si - H}$ stretching vibrations at 2115 and $2275 \\mathrm{cm}^{-1}$ versus $\\mathrm{Si}_2\\mathrm{H}_6$ exposure during the $\\mathrm{Si}_2\\mathrm{H}_6$ half-reaction at $425 \\mathrm{K}$ .","id":"train/atomic-layer-deposition/experimental-usecase/12/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/12/fig_7","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This mulitple line plot represents the normalized, integrated absorbance of key IR vibrations (W–F stretch and Si–H stretches) against the total Si₂H₆ exposure during the WF₆ half-reaction at 425 K. It shows the W–F signal decaying and the Si–H signal growing as exposure increases, both saturating at high exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Si₂H₆ Exposure (Torr min) | Normalized Integrated Absorbance | Stretch |\\n|---|---|-----|\\n| 0.0 | 0.0 | W-F Stretch |\\n| 0.0 | 0.0 | Si-H Stretch |\\n| 0.1 | 0.04 | W-F Stretch |\\n| 0.1 | 0.8 | Si-H Stretch |\\n| 0.2 | 0.007 | W-F Stretch |\\n| 0.2 | 0.9 | Si-H Stretch |\\n| 0.3 | -0.01 | W-F Stretch |\\n| 0.3 | 1 | Si-H Stretch |\\n| 0.4 | -0.01 | W-F Stretch |\\n| 0.4 | 1 | Si-H Stretch |\\n| 0.5 | -0.02 | W-F Stretch |\\n| 0.5 | 1 | Si-H Stretch |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The plateau indicates a self-limiting control mechanism, a hallmark of ALD. Once the reactive Si-H surface sites are fully consumed (absorbance ~ 0) and replaced by W-F species, the reaction stops automatically, meaning extending the exposure time further yields no additional material growth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"0.1 Torr·min (Speed): High throughput, but the Si-H signal is still ~0.3 (30% unreacted), and W-F coverage is only ~80%.\\n\\n0.6 Torr·min (Quality): Slower throughput, but Si-H is fully removed (~0.0) and W-F is saturated (1.0).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At the crossover point, the surface is a heterogeneous mixture of approximately 50% unreacted Si-H bonds and 50% newly formed W-F species.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The saturation value greater than 1.0 indicates a high density of reactive Si–H sites, possibly including higher-order silane species (SiHₓ). Such a hydrogen-rich surface is advantageous because Si–H bonds serve as the reducing agent for WF₆. A larger population of these active sites promotes fast and uniform nucleation of tungsten in the following deposition step.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":1,"width":598,"height":580}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/J.W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":600,"height":586,"image_format":"jpeg","image_sha256":"7491f6e170ee23f7f950aefdf68964bd25d9ebbe7afc51529c5eb8f323bf8e50","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_13_fig_3.jpg","caption":"FIG. 3. $1\\mathrm{kHz}C - V$ measurements for MOS capacitors, $\\mathrm{Cu(100nm) / 10nm}$ $\\mathrm{Ti - Si - N}$ barrier layer (or without the barrier layer) $\\mathrm{SiO_2}$ $100\\mathrm{nm}) / N$ -type Si. a and b are the $C - V$ profiles for the MOS capacitor without the barrier layer before and after thermal treatment at $600^{\\circ}\\mathrm{C}$ for $60~\\mathrm{min}$ in $\\mathrm{H}_{2}$ $(10\\%)/\\mathrm{Ar}(90\\%)$ respectively.c is the $C - V$ profiles for the MOS capacitor with a $10\\mathrm{nm}$ Ti-Si-N barrier layer after thermal treatment at $800^{\\circ}\\mathrm{C}$ for $60~\\mathrm{min}$ in $\\mathrm{H}_{2}$ $(10\\%)/\\mathrm{Ar}(90\\%)$","id":"train/atomic-layer-deposition/experimental-usecase/13/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/13/fig_3","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the normalized capacitance (C/Cox) against voltage for three different conditions: before thermal treatment, no barrier capacitor at 600°C, and Ti-Si-N (10 nm) capacitor at 800°C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Voltage [V] | Before thermal treatment | No barrier capacitor | Ti-Si-N capacitor |\\n| --- | --- | --- | --- |\\n| -15 | 0.21 | 1.00 | 0.19 |\\n| -10 | 0.22 | 1.00 | 0.20 |\\n| -5 | 0.35 | 0.60 | 0.25 |\\n| 0 | 1.00 | 0.90 | 1.00 |\\n| 5 | 1.00 | 1.00 | 1.00 |\\n| 10 | 1.00 | 1.00 | 1.00 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For both curves, the MOS capacitor does not have the barrier layer.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For all the curves, the normalized capacitance exhibits the same behavior at voltage values above 1V: it remains constant as the voltage increases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately at -3V.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Cu atoms can enter the Si and form deep donor levels. These levels can act as the generation and recombination centers of electron-hole pairs.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":589,"height":563}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/13/Jae-Sik Min et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":595,"height":567,"image_format":"jpeg","image_sha256":"200bc2cfb4a66c2e0d2342296d85fbe6fc75aaa6455469102a3e99465c4c18c7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_25_figure_3.jpg","caption":"Figure 3. MPC for 400 ALD cycles of either $\\mathrm{ZnO}$ (red diamonds) or $\\mathrm{GeO}_y$ (blue squares). The deposition of $\\mathrm{ZnO}$ was interrupted after 200 cycles by performing a single $\\mathrm{GeO}_y$ cycle before depositing another 200 cycles of $\\mathrm{ZnO}$ . Similarly, the deposition of $\\mathrm{GeO}_y$ was interrupted after 200 cycles by performing a single $\\mathrm{ZnO}$ cycle before depositing another 200 cycles of $\\mathrm{GeO}_y$ .","id":"train/atomic-layer-deposition/experimental-usecase/25/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/25/figure_3","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure plots the mass per cycle (MPC) during 400 ALD cycles for ZnO and GeOₓ films. Each deposition was interrupted after 200 cycles by inserting a single cycle of the opposite material, creating ZnO/GeOₓ/ZnO and GeOₓ/ZnO/GeOₓ sequences\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle Number | ZnO / 1 cycle GeOₓ / ZnO (ng/cm²) | GeOₓ / 1 cycle ZnO / GeOₓ (ng/cm²) |\\n|--------------|------------------------------------|--------------------------------------|\\n| 0 | 140 | 20 |\\n| 50 | 145 | 22 |\\n| 100 | 147 | 23 |\\n| 150 | 148 | 24 |\\n| 200 (Interruption) | 150 | 50 |\\n| 250 | 152 | 24 |\\n| 300 | 153 | 25 |\\n| 350 | 155 | 26 |\\n| 400 | 158 | 27 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The deposition of ZnO was interrupted after 200 cycles by performing a single GeOy cycle before depositing another 200 cycles of ZnO. Similarly, the deposition of GeOy was interrupted after 200 cycles by performing a single ZnO cycle before depositing another 200 cycles of GeOy. As one continuous process is interrupted, this is called an interruption experiment\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"An interruption experiment was performed to further understand the dynamics of the inhibition seen when mixing ZnO and GeOy subcycles into ZGO supercycles\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Only a minor transient in MPC was seen after the ZnO process was interrupted with a single GeOy cycle.\\n 2. In contrast, when the GeOy process was interrupted by a single ZnO cycle, the MPC was lowered for more than 100 consecutive GeOy cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The implication of this for the ZGO supercycle processes would be that the more the GeOy cycles used in a row, the more the Ge−OH on the surface and the more the reaction sites end up being poisoned during the DEZ exposure. As a result, the GPC would decrease as the amount of GeOy cycles in the ZGO supercycle increases.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":501,"height":349}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/Adam Hultqvist et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":503,"height":350,"image_format":"jpeg","image_sha256":"08936291d7c61e451c40bcffe53e87a2b96ae4076204cb6e560cd3ad3516c0ae","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_25_figure_6.jpg","caption":"Figure 6. Optical absorption as a function of the cation ratio, $x_{i}$ of a TGO and $(\\hat{1})$ ZGO films deposited on fused silica.","id":"train/atomic-layer-deposition/experimental-usecase/25/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/25/figure_6","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows tauc plot for TGO at various GeOx concentrations.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows tauc plot for ZGO at various GeOx concentrations.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| E (eV) | x = 0% | x = 6.5% | x = 7.7% | x = 10% | x = 16% | x = 30% |\\n|--------|--------|----------|----------|---------|---------|---------|\\n| 3.0 | 1000 | 800 | 700 | 600 | 500 | 200 |\\n| 3.5 | 2500 | 2200 | 2100 | 1900 | 1700 | 800 |\\n| 4.0 | 4000 | 3700 | 3500 | 3300 | 3000 | 1500 |\\n| 4.5 | 5500 | 5200 | 5000 | 4700 | 4300 | 2200 |\\n| 5.0 | 6000 | 5800 | 5600 | 5300 | 4900 | 2800 |\"},{\"panel_id\":\"b\",\"text\":\"| E (eV) | x = 0% | x = 3.2% | x = 12% | x = 19% | x = 32% | x = 37% |\\n|--------|--------|----------|---------|---------|---------|---------|\\n| 3.0 | 800 | 600 | 400 | 300 | 200 | 100 |\\n| 3.5 | 2200 | 1900 | 1600 | 1400 | 1000 | 700 |\\n| 4.0 | 3700 | 3400 | 3000 | 2700 | 2200 | 1800 |\\n| 4.5 | 5200 | 4900 | 4500 | 4100 | 3500 | 3000 |\\n| 5.0 | 6000 | 5800 | 5400 | 5000 | 4400 | 3800 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Eg increased as the ZGO cation ratio increased. The ZnO was found to be able to incorporate small amounts of Ge into the wurtzite lattice and thereby\\nincrease both conductivity and Eg, while larger amounts led to a high resistivity and worse crystal quality\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. For maximum doping of TGO 0.30, Eg = 3.5 eV\\n2. For ZGO, ZGO 0.32 gives 4.11 eV and \\n3. ZGO 0.32, Eg = 4.49 eV\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The bandgap Eg slowly increased as the cation ratio increased\"}]}]","bbox":[{"panel_id":"b","x":0,"y":301,"width":448,"height":348},{"panel_id":"a","x":0,"y":1,"width":446,"height":302}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/Adam Hultqvist et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":450,"height":653,"image_format":"jpeg","image_sha256":"87f4deccaaffc9687ffc6b7a61ca01ec4342d2049b9cc1c97604139ee6e614e7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_2.jpg","caption":"Figure 2. Growth rate for ALD ITO versus percentage of $\\mathrm{SnO_2}$ cycles determined using VASE $(\\bullet)$ and XRF $(\\nabla)$ . Solid line guides the eye, and dashed line shows expected growth rates calculated using a rule-of-mixtures formula.","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the variation in growth rate (in Å/cycle) as a function of SnO₂ cycle percentage. Measurements from ellipsometry and XRF are plotted, along with a dashed line representing the rule of mixtures. Both techniques show a decreasing trend in growth rate with increasing SnO₂ cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| % SnO₂ Cycles | Ellipsometry (Å/cycle) | XRF (Å/cycle) |\\n|---------------|-------------------------|----------------|\\n| 0 | 1.75 | 1.60 |\\n| 1 | 1.45 | 1.40 |\\n| 2 | 1.35 | 1.30 |\\n| 3 | 1.25 | 1.20 |\\n| 4 | 1.15 | 1.10 |\\n| 5 | 1.05 | 1.00 |\\n| 10 | 0.95 | 0.90 |\\n| 15 | 0.85 | 0.80 |\\n| 20 | 0.75 | 0.70 |\\n| 25 | 0.65 | 0.60 |\\n| 30 | 0.55 | 0.50 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The growth rate decreases steadily as the % SnO₂ cycles increases, for both ellipsometry and XRF measurements, with ellipsometry consistently reading higher.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, the trend is nonlinear, especially in the low % SnO₂ region.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ellipsometry, X-ray fluorescence (XRF), Rule of Mixtures model\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It represents a theoretical growth rate expected from a weighted average of individual components.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":583,"height":586}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":583,"height":586,"image_format":"jpeg","image_sha256":"f1b7ac677e57f609ec67bffcd23ddf8f8a17adcc301100bc1014c17faeaa2bcb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_4.jpg","caption":"Figure 4. Growth rate versus ALD cycles measured using in situ QCM during ITO growth using $10\\%$ $\\mathrm{SnO_2}$ cycles.","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_4","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the growth rate (Å/cycle) of SnO₂ and In₂O₃ as a function of ALD cycles. The SnO₂ growth rate exhibits periodic dips, while the In₂O₃ growth remains relatively steady with minor fluctuations.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD Cycles | SnO₂ | In₂O₃ |\\n|---|---|---|\\n| 0 | 1.15 | 1.15 |\\n| 5 | 1.20 | 1.20 |\\n| 10 | 1.10 | 1.10 |\\n| 15 | 1.25 | 1.25 |\\n| 20 | 1.30 | 1.30 |\\n| 25 | 1.20 | 1.20 |\\n| 30 | 1.10 | 1.10 |\\n| 35 | 1.25 | 1.25 |\\n| 40 | 1.30 | 1.30 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"SnO₂ shows sharp dips at regular intervals, suggesting a periodic change, while In₂O₃ growth rate remains relatively stable.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SnO₂\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SnO₂ growth may be affected by precursor pulsing or surface saturation ,In₂O₃ growth is more consistent, Useful for tuning multilayer structures.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":575,"height":583}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":575,"height":583,"image_format":"jpeg","image_sha256":"03652fa56847d52bdceb2812be97b195c7205678cb117db06e9fb3555b1905dd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_27_fig_2.jpg","caption":"Fig. 2. AES depth profile (a) and impurity contents (b) of TiN films deposited by remote PEALD method using TDMAT precursor and nitrogen plasma.","id":"train/atomic-layer-deposition/experimental-usecase/27/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/27/fig_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The atomic concentration of various elements throughout a film, with carbon and oxygen decreasing deeper in the film.\"},{\"panel_id\":\"b\",\"text\":\"Atomic concentrations of carbon and oxygen as function of deposition temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sputter Time (min) | C | O | O of SiO₂ | Ti | N | Si |\\n|---|---|---|---|---|---|---|\\n| 0 | 4 | 6 | 0 | 39 | 53 | 0 |\\n| 5 | 4 | 5 | 0 | 37 | 53 | 0 |\\n| 10 | 4 | 5 | 0 | 36 | 50 | 5 |\\n| 15 | 4 | 3 | 0 | 35 | 45 | 10 |\\n| 20 | 4 | 0 | 10 | 30 | 40 | 20 |\\n| 25 | 3 | 0 | 25 | 25 | 30 | 25 |\\n| 30 | 3 | 0 | 35 | 20 | 20 | 30 |\\n| 35 | 0 | 0 | 45 | 15 | 15 | 30 |\\n| 40 | 0 | 0 | 50 | 10 | 10 | 30 |\\n| 45 | 0 | 0 | 55 | 5 | 5 | 30 |\\n| 50 | 0 | 0 | 60 | 0 | 0 | 35 |\"},{\"panel_id\":\"b\",\"text\":\"| Deposition Temperature (°C) | Carbon | Oxygen |\\n|---|---|---|\\n| 150 | 11 | 10 |\\n| 200 | 7 | 6 |\\n| 250 | 3 | 3 |\\n| 300 | 4 | 3 |\\n| 350 | 5 | 3 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The lowest impurities are achieved at 250 degrees C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A common source of carbon impurities is the precursor ligands. Oxygen impurities can arise due to background water in the reactor which is incorporated by the plasma\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This is due to the penetration depth of the measurement method which is likely to be around 5-10 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TiN was deposited on silicon oxide, this is shown by the Si and O from SiO2 signal.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":0,"width":538,"height":422},{"panel_id":"b","x":0,"y":498,"width":552,"height":436}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/27/Ju Youn KIM et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":553,"height":970,"image_format":"jpeg","image_sha256":"ed7dd6b7dabb9b2e15b5499dea2b3dd7e7f67e296a8206d3036e03d4f954cedd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_32_figure_2.jpg","caption":"Figure 2. Growth rates of thermal and PE-ALD $\\mathrm{Ta_2O_5}$ as a function of water and oxygen plasma exposure time $(t_{\\mathrm{r}})$ on $\\mathrm{Si(001)}$ substrate at $T_{\\mathrm{s}} = 250^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/32/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/32/figure_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares growth rates of thermal ALD (using H₂O) and PE-ALD (using O₂ plasma) for Ta₂O₅ as a function of reactant exposure time at 250°C. Both methods exhibit saturation behavior for t_r ≥ 1 s, with PE-ALD achieving a higher saturated growth rate (~1.2 Å/cycle) compared to thermal ALD (~0.85 Å/cycle).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| t_r, s | Growth rate thermal ALD (Å/cycle) | Growth rate PE-ALD (Å/cycle) |\\n|---|---|---|\\n| 0 | 0.05 | 0.08 |\\n| 0.25 | 0.30 | 0.40 |\\n| 0.5 | 0.75 | 0.75 |\\n| 1 | 0.82 | 1.10 |\\n| 2 | 0.83 | 1.12 |\\n| 3 | 0.84 | 1.14 |\\n| 5 | 0.85 | 1.14 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"PE-ALD achieves approximately 1.2 Å/cycle while thermal ALD reaches approximately 0.85 Å/cycle, making PE-ALD about 40% faster.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thermal ALD uses water vapor, while PE-ALD uses oxygen plasma.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The higher growth rate in PE-ALD is attributed to the greater reactivity of the oxygen plasma species, which include atomic oxygen and activated oxygen molecules. These reactive species can more efficiently oxidize the adsorbed PDMAT precursor and potentially create more reactive surface sites for subsequent adsorption cycles compared to water vapor in thermal ALD.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Both methods show saturation of growth rate for reactant exposure times greater than approximately 1 second.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":670,"height":503}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/W. J. Maeng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":670,"height":503,"image_format":"jpeg","image_sha256":"e050b126404a37a5b13e1dec33ffe9118fd42889b19d03323f98e04fef926d10","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_32_figure_3.jpg","caption":"Figure 3. Growth rates of thermal and PE-ALD $\\mathrm{Ta_2O_5}$ as a function of growth temperature $T_{\\mathrm{s}}$ .","id":"train/atomic-layer-deposition/experimental-usecase/32/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/32/figure_3","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the temperature dependence of Ta₂O₅ growth rate for thermal ALD and PE-ALD. Both methods exhibit three regimes: elevated growth rates at low temperatures, a stable ALD window in the middle, and increasing growth rates at high temperatures due to precursor decomposition. The ALD window spans 200 to 250°C for thermal ALD and 150 to 250°C for PE-ALD, demonstrating that PE-ALD enables ALD growth at approximately 50°C lower temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| T_s, °C | Growth rate thermal ALD (Å/cycle) | Growth rate PE-ALD (Å/cycle) |\\n|---|---|---|\\n| 100 | - | 1.40 |\\n| 125 | 1.32 | - |\\n| 150 | 1.20 | 1.20 |\\n| 175 | - | 1.18 |\\n| 200 | 0.90 | 1.17 |\\n| 250 | 0.85 | 1.15 |\\n| 275 | - | 1.25 |\\n| 300 | 1.00 | - |\\n| 500 | 1.58 | 1.70 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ALD window is 200 to 250°C for thermal ALD and 150 to 250°C for PE-ALD.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At high temperatures, the PDMAT precursor undergoes thermal decomposition before the self-limiting surface reaction can complete. This leads to continuous CVD-like deposition rather than true ALD, resulting in higher apparent growth rates. The loss of self-limitation compromises the precise thickness control that is characteristic of ALD.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"PE-ALD uses oxygen plasma containing highly reactive species such as atomic oxygen and activated oxygen molecules. These radicals have sufficient reactivity to oxidize the adsorbed precursor even at lower temperatures where water vapor in thermal ALD would be insufficiently reactive. In fact, the authors note that Ta₂O₅ could not be deposited without plasma at temperatures below 250°C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 1.4 Å/cycle.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":684,"height":533}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/W. J. Maeng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":684,"height":533,"image_format":"jpeg","image_sha256":"7aad86506f50da1c24260d4860e54d192547c2a1d5f2e2cb91aa41faac97e275","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_35_figure_4.jpg","caption":"Figure 4. Composition of GST films as a function of (a) $\\mathrm{GeCl}_2\\cdot \\mathrm{C}_4\\mathrm{H}_8\\mathrm{O}_2$ pulse length and (b) $\\mathrm{GeTe / (GeTe + Sb_2Te_3)}$ cycling ratio. $\\mathrm{SbCl}_3$ and $(\\mathrm{Et}_3\\mathrm{Si})_2\\mathrm{Te}$ pulse lengths were always $1.0~\\mathrm{s}$ and purges were $2.0~\\mathrm{s}$ .","id":"train/atomic-layer-deposition/experimental-usecase/35/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/35/figure_4","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the composition of a Ge, Sb, and Te film at different pulse lengths of GeCl₄-dioxane.\"},{\"panel_id\":\"b\",\"text\":\"The scatter plot displays the composition of a Ge, Sb, and Te film at various cycles of GeTe/(GeTe+Sb₂Te₃).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| GeCl₄-dioxane pulse length (s) | Composition (at.%) Ge|Composition (at.%) Sb|Composition (at.%) Te|\\n|---|---|---|---|\\n| 1 | 15 |35|50|\\n| 2 | 25 |25|50|\\n| 3 | 30 |20|50|\\n| 4 | 30 |20|50|\\n| 6 | 30 |20|50|\"},{\"panel_id\":\"b\",\"text\":\"| GeTe/(GeTe+Sb₂Te₃) cycling | Composition (at.%) Ge|Composition (at.%) Sb|Composition (at.%) Te|\\n|---|---|---|---|\\n| 0.25 | 20 |30|50|\\n| 0.33 | 22 |28|50|\\n|0.36|28|22|50|\\n| 0.5 | 30 |20|50|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"4 s\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Sb is replaced with Ge, as for increasing Ge exposure, the Ge percentage increases and the Sb percentage decreases. The Te percentage remains constant.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"three\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The method to show the cycle ratio can mean 1 to 3 but also 50 to 150, in both cases the composition will be different due to the probing depth of the measurement technique with which the composition is measured.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":5,"width":312,"height":265},{"panel_id":"b","x":332,"y":10,"width":303,"height":259}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/Viljami Pore et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":636,"height":270,"image_format":"jpeg","image_sha256":"79b3569ff9c435400c8cf0aa89660172dd90e2d8b66944edb9f5b2bb894a5bbd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_36_fig9.jpg","caption":"Fig.9 $I_{DS} - V_{DS}$ characteristics of the conventional HEMT and the $\\mathrm{Ga_2O_3}$ MOS-HEMT upon varying the value of $V_{G}$ from $-6$ to $+2\\mathrm{V}$ at a step of $+1\\mathrm{V}$","id":"train/atomic-layer-deposition/experimental-usecase/36/fig9","sample_id":"atomic-layer-deposition/experimental-usecase/36/fig9","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the drain current (IDSS) versus drain-source voltage (VDS) for Ni/Au-HEMT and Ga2O3 MOS-HEMT devices.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| VDS (V) | Ni/Au-HEMT | Ga2O3 MOS-HEMT |\\n| --- | --- | --- |\\n| 0 | 0 | 0 |\\n| 5 | 800 | 1000 |\\n| 10 | 810 | 1010 |\\n| 15 | 805 | 1000 |\\n| 20 | 800 | 900 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Vg varies from -6 V to +2 V in steps of 1 V.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In both cases, the current increases to 5 V and then remains almost constant.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the figure, Ga2O3 MOS-HEMT sample reaches higher current values.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"I_DSS of 608 mA/mm for Ni/Au-HEMT and I_DSS of 720 mA/mm for Ga2O3 MOS-HEMT.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":8,"width":609,"height":384}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/Huan-Yu Shih et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":611,"height":392,"image_format":"jpeg","image_sha256":"a9ea0f9e32da3be091e8c5fad45d866598310e53e569870b598350443bb4ef8c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_36_fig_11.jpg","caption":"Fig. 11 a Gate leakage current and b three-terminal off-state breakdown characteristics of the conventional HEMT and the $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ MOS-HEMT","id":"train/atomic-layer-deposition/experimental-usecase/36/fig_11","sample_id":"atomic-layer-deposition/experimental-usecase/36/fig_11","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The graph shows the gate-drain current (IGD) versus gate-source voltage (VGD) for Ni/Au-HEMT and Ga2O3 MOS-HEMT.\"},{\"panel_id\":\"b\",\"text\":\"The graph shows the drain-source current (IDS) versus drain-source voltage (VDS) for Ni/Au-HEMT and Ga2O3 MOS-HEMT. Voltage values of 126 V and 170 V are highlighted.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| VGD (V) | Ni/Au-HEMT | Ga2O3 MOS-HEMT |\\n| --- | --- | --- |\\n| -10 | 10^-3 | 10^-5 |\\n| -8 | 10^-3 | 10^-5 |\\n| -6 | 10^-3 | 10^-5 |\\n| -4 | 10^-3 | 10^-5 |\\n| -2 | 10^-4 | 10^-6 |\\n| 0 | 10^-6 | 10^-9 |\\n| 2 | 10^0 | 10^0 |\"},{\"panel_id\":\"b\",\"text\":\"| VGD (V) | Ni/Au-HEMT | Ga2O3 MOS-HEMT |\\n| --- | --- | --- |\\n| 0 | 0 | 0 |\\n| 30 | 0 | 0 |\\n| 60 | 0 | 0 |\\n| 90 | 0 | 0 |\\n| 120 | 0.15 | 0.01 |\\n| 150 | - | 0.05 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Subfigure a shows the gate-drain current versus voltage gate-drain for both samples.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For the Ni/Au-HEMT, the current remains constant but begins to increase after 90 V, with a significant increase at 126 V. Meanwhile, the Ga2O3 MOS-HEMT sample remains constant until approximately 150 V and then increases significantly at 170 V.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"170 V.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ALD Ga2O3 film can suppressed the gate leakage current density and increased the drain-state voltage.\"}]}]","bbox":[{"panel_id":"a","x":14,"y":25,"width":462,"height":400},{"panel_id":"b","x":498,"y":18,"width":466,"height":409}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/Huan-Yu Shih et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":964,"height":427,"image_format":"jpeg","image_sha256":"555ed7cd0cf6e4f4dfbb6cfdc848e54605f047da36c47e120b7c4898d2e20e1f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_36_fig_8.jpg","caption":"Fig. 8 The capacitance-voltage (C-V) characteristics of the conventional HEMT and the $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ MOS-HEMT","id":"train/atomic-layer-deposition/experimental-usecase/36/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/36/fig_8","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the capacitance-voltage characteristics of the conventional HEMT and the Ga2O3 MOS-HEMT.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gate Voltage (V) | Ga2O3 MOS-HEMT | conventional HEMT |\\n|-----------------|-------|-------|\\n| -8 | 0 | 0 |\\n| -7 | 0 | 0 |\\n| -6 | 0 | 0 |\\n| -5 | 0 | 0 |\\n| -4 | 15 | 0 |\\n| -3 | 15 | 27 |\\n| -2 | 15 | 27 |\\n| -1 | 15 | 27 |\\n| 0 | 15 | 27 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The capacitance-voltage characteristics were measured at 1 MHz.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For both the Ga2O3 MOS-HEMT and the conventional HEMT, the capacitance increases until it reaches plateaus of 15 and 7, respectively.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The capacitance value is o when the gate voltage varies from -8 to -4 V.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Ga2O3 HEMT allows for the lowest possible capacitance values.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":617,"height":444}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/Huan-Yu Shih et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":620,"height":450,"image_format":"jpeg","image_sha256":"32787a11603f9a0bacb2f76fd403b8770692af3b33c2e00c2bd2067bdc2226cb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_40_fig_7.jpg","caption":"FIG. 7. Change of sheet resistance on $\\mathrm{Cu / PEALD}$ TiN $10 \\mathrm{nm} / \\mathrm{Si}$ and $\\mathrm{Cu / PEALD}$ Ti-Si-N $10 \\mathrm{nm} / \\mathrm{Si}$ as a function of annealing temperature.","id":"train/atomic-layer-deposition/experimental-usecase/40/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/40/fig_7","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Multiple line chart showing sheet resistance evolution of Cu/PEALD TiN and Cu/PEALD Ti–Si–N (10 nm) films on Si as a function of annealing temperature. TiN remains conductive up to ~550 °C but exhibits a sharp resistance increase at 600 °C, indicating thermal degradation. In contrast, Ti–Si–N maintains near-zero resistance up to 600 °C and shows a delayed, gradual increase at higher temperatures, demonstrating enhanced thermal stability due to silicon incorporation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Annealing temperature (°C) | Sheet resistance: TiN | Sheet resistance: Ti–Si–N @ Ar |\\n|----------------------------|-----------------------------|--------------------------------------|\\n| 450 | ~0 | ~0 |\\n| 500 | ~0 | ~0 |\\n| 550 | ~5 | ~0 |\\n| 600 | ~62 | ~0 |\\n| 650 | – | ~7 |\\n| 700 | – | ~30 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Nitrogen out-diffusion from TiN\\n, -Grain growth and grain boundary formation\\n, -Copper diffusion into the barrier layer\\n, -Loss of film continuity during annealing\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TiN shows a sudden and dramatic rise in sheet resistance at 600 °C, indicating rapid loss of electrical continuity. In contrast, Ti–Si–N maintains low resistance through 600 °C and degrades only gradually at higher temperatures, reflecting superior thermal robustness.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Silicon incorporation disrupts long-range crystallinity and suppresses grain boundary formation, which are common diffusion pathways. This structural modification stabilizes the film against high-temperature degradation, delaying resistance increase compared to pure TiN.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Because Ti–Si–N maintains low sheet resistance at higher annealing temperatures, indicating improved thermal and diffusion-barrier stability.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":2,"width":498,"height":396}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":506,"height":400,"image_format":"jpeg","image_sha256":"5b52f5e9ac3fff195ed759c54063a29c615a481d668c6178c7b0925c8a9c77c7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_41_fig_1.jpg","caption":"FIG. 1. Effective lifetime as a function of the excess carrier density for low resistivity $p$ -type $(300\\mu \\mathrm{m}$ , $(111)$ , $2.0\\Omega \\mathrm{cm}$ float zone $c$ -Si substrate passivated with 30 and $15\\mathrm{nm}$ thick $\\mathrm{Al}_2\\mathrm{O}_3$ films.","id":"train/atomic-layer-deposition/experimental-usecase/41/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/41/fig_1","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between injection level and effective lifetime for two different thickness passivation layers (30 nm and 15 nm). The data points are clustered around a curve, indicating a non-linear relationship.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Injection level Δn (cm⁻³) | Effective lifetime (s), 30 nm|Effective lifetime (s), 15 nm|\\n|---|---|---|\\n| 10¹² | 2*10⁻⁴ |-|\\n| 10¹³ | 4*10⁻⁴ |10⁻³|\\n| 10¹⁴ | 6*10⁻⁴ |10⁻³ |\\n| 10¹⁵ | 9*10⁻⁴ |10⁻³ |\\n| 10¹⁶ | 10⁻³ |10⁻³ |\\n| 10¹⁷ | 10⁻⁴ |10⁻⁴ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 15 nm thick layer, this thickness seems to have the best effect over a broader range of injection level.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.001 s.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Scattered data does not show a straight line. In addition, both axes are logarithmic.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.0001 s\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":538,"height":411}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/Hoex et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":539,"height":414,"image_format":"jpeg","image_sha256":"26b5af2e6f1c0da0701cc917e24f476767e25dda7919bca670465e674dfc4e71","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_41_fig_2.jpg","caption":"FIG. 2. Effective lifetime as a function of the excess carrier density for low resistivity $n$ -type $(275\\mu \\mathrm{m}$ , $(100)$ , $1.9\\Omega \\mathrm{cm}$ float zone $c$ -Si substrate passivated with 30, 15, and $7\\mathrm{nm}$ thick $\\mathrm{Al}_2\\mathrm{O}_3$ films.","id":"train/atomic-layer-deposition/experimental-usecase/41/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/41/fig_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the effective lifetime of a system as a function of injection level Δn, with data points represented by different symbols corresponding to different thickness passivation layers (26, 13, and 7 nm).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Injection level Δn (cm⁻³) | Effective lifetime (s), 26 nm|Effective lifetime (s), 13 nm|Effective lifetime (s), 7 nm|\\n|---|---|---|---|\\n| 10¹² | 10⁻³ |-|-|\\n| 10¹³ | 2*10⁻³ |10⁻³|10⁻³|\\n| 10¹⁴ | 5*10⁻³ |2*10⁻³ |2*10⁻³ |\\n| 10¹⁵ | 7*10⁻³ |3*10⁻³ |3*10⁻³ |\\n| 10¹⁶ | 10⁻³ |8*10⁻⁴ |8*10⁻⁴|\\n| 10¹⁷ | - |-|10⁻⁴ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The difference between the 7 and 13 nm thick passivating layers is negligable, whereas the 26 nm layer does show an increase in passivation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The overal trends look similar, important is that the maximum effective lifetime seems to shift to higher injection levels with thicker passivation layers.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.008 s with a passivation layer of 26 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10^15 per cubic centimeter.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":540,"height":426}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/41/Hoex et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":544,"height":433,"image_format":"jpeg","image_sha256":"6ed5a138a6cd736d10b12caa848929906f83974e8f96c58bd84e1f3870f82fda","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_50_fig4.jpg","caption":"Fig.4 Resistivity. $\\rho$ a),carrier concentration, $n$ b),mobility, $\\mu$ c and doping efficiency $\\eta$ (d) of the ZnO:X $\\mathbb{X} = \\mathbb{A}\\mathbb{I}$ B) films as a function of the doping fraction (DF) measured by XPS. TIB was used as a B source while DMAI and TMA were used as A sources. All films had a thickness of $45\\pm$ $5\\mathrm{nm}$ and were deposited on glass substrates at $150^{\\circ}C$ The lines serve as guides to the eye. The error bars for $\\rho$ are plotted in the graph (some of them lying within the data points) and the estimated relative statistical uncertainties for n, $\\mu$ and $\\eta$ are $3\\%$ $5\\%$ and $20\\%$ respectively.","id":"train/atomic-layer-deposition/experimental-usecase/50/fig4","sample_id":"atomic-layer-deposition/experimental-usecase/50/fig4","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multiple scatter plot"},{"panel_id":"d","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The resistivity of TIB, DMAI, and TMA decreases as the doping fraction increases and then slightly increases\"},{\"panel_id\":\"b\",\"text\":\"The carrier concentration of TIB, DMAI, and TMA initially increases and then decreases as the doping fraction increases.\"},{\"panel_id\":\"c\",\"text\":\"The Mobility also increases initially and then decreases\"},{\"panel_id\":\"d\",\"text\":\"Doping efficiency increases at the beginning and then decreases, but for TMA it remains constant.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Doping fraction, DF | TIB (mΩ·cm) | DMAI (mΩ·cm) | TMA (mΩ·cm) |\\n|---|---|---|---|\\n| 0.00 | 0 | 0 | 70 |\\n| 0.020 | 6 | 10 | 20 |\\n| 0.040 | 8 | 8 | 15 |\\n| 0.060 | 10 | 10 | 12 |\\n| 0.080 | 28 | 18 | - |\\n| 0.100 | - | 25 | 22 |\"},{\"panel_id\":\"b\",\"text\":\"| Doping fraction, DF | TIB (10^20 cm^-3) | DMAI (10^20 cm^-3) | TMA (10^20 cm^-3) |\\n|---|---|---|---|\\n| 0.00 | 0.0 | 0.0 | 0.0 |\\n| 0.01 | 1 | 1 | - |\\n| 0.02 | 1.5 | 1.5 | - |\\n| 0.03 |3.0 | 2.5 | 0.5 |\\n| 0.04 | - | 2.5 | 1.0 |\\n| 0.05 | 2.75 | - | - |\\n| 0.06 | 2.0 | 2.2 | 1.5 |\\n| 0.08 | 1.5 | - | - |\\n| 0.09 | 1.0 | 2.2 | - |\\n| 0.10 |- 000 | 2.2 | 1.5 |\"},{\"panel_id\":\"c\",\"text\":\"| Doping fraction, DF | TIB (cm²/V·s^-1) | DMAI (cm²/V·s^-1) | TMA (cm²/V·s^-1) |\\n|---|---|---|---|\\n| 0.00 | 7.0 | 7.0 | 7.0 |\\n| 0.01 | 8.0 | 8.0 | 8.0 |\\n| 0.02 | 9.0 | 9.0 | 9.0 |\\n| 0.03 | 10.0 | 10.0 | 10.0 |\\n| 0.04 | 11.0 | 11.0 | 11.0 |\\n| 0.05 | 12.0 | 12.0 | 12.0 |\\n| 0.06 | 10.0 | 10.0 | 10.0 |\\n| 0.07 | 8.0 | 8.0 | 8.0 |\\n| 0.08 | 6.0 | 6.0 | 6.0 |\\n| 0.09 | 4.0 | 4.0 | 4.0 |\\n| 0.10 | 2.0 | 2.0 | 2.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The addition of a small amount of B sharply reduced the resistivity of the films to a minimum of ~3.5 mOhm cm for a doping fraction (DF) of 0.016. The addition of Al also reduced the resistivity of the films to a minimum in both cases. Doping with DMAI resulted in ZnO:Al films with the same minimum resistivity than ZnO:B films at the same DF of 0.016, while doping with TMA resulted in ZnO:Al films with a higher minimum resistivity of 8 mO cm for a higher DF of 0.040. The resistivity of ZnO:Al films increased in both cases after achieving the minimum resistivity value, but this increase was more gradual than observed for the ZnO:B films.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The overall lower mobility values obtained for the three doping materials and the trend of mobility decreasing with increasing doping fraction over the full range studied can most likely be attributed to grain boundary scattering. Furthermore, it is rather striking that m increases when going\\nfrom undoped ZnO to low B-doping concentrations, as one would expect more ionized impurity scattering. Yet a similar trend in mobility was observed for ZnO:B films prepared by the\\nsol–gel technique.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TIB and DMAI, showed the highest doping efficiency at low doping levels, i.e., 30–40% for a range of DF of 0.016–0.018 that resulted in the lowest resistivities for the ZnO:B and ZnO:Al (doped with DMAI) films. Both alternative precursors outperformed TMA in terms of doping efficiency, as a maximum doping efficiency of 6% was achieved using this conventional precursor.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increase of the carrier concentration for low doping fractions in the three cases can be assigned to the effective doping of B and Al, respectively (i.e., substitution of Zn2+ by B3+ or Al3+). The sharp decrease of the carrier concentration for TIB and the local saturation for DMAI and TMA might occur as a result of dopant occupying interstitial sites, dopant clustering, formation of oxides, or formation of metastable phases, making dopant inactive, which is possibly related to reaching the solubility limit of the B and Al into the ZnO lattice.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":579,"height":317},{"panel_id":"b","x":0,"y":319,"width":577,"height":341},{"panel_id":"c","x":4,"y":662,"width":574,"height":320},{"panel_id":"d","x":4,"y":991,"width":576,"height":370}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/Garcia-Alonso et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":581,"height":1370,"image_format":"jpeg","image_sha256":"a724d3409c392cec0b7d8bf5b4c4734ca01c0651d6f41521e5cf15c27aa00496","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_64_fig_5.jpg","caption":"FIG. 5. Growth rate of the ruthenium films grown from $\\mathrm{RuCp}_2$ on iridium as a function of the deposition temperature, the film thicknesses being measured by EDX and XRR. The $\\mathrm{RuCp}_2$ and oxygen pulse times were 0.5 and $0.2\\mathrm{s}$ , respectively, and the purge period between the pulses was $0.5\\mathrm{s}$ .","id":"train/atomic-layer-deposition/experimental-usecase/64/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/64/fig_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the growth rate of ruthenium films deposited from RuCp2 on an iridium substrate as a function of deposition temperature. Film thicknesses were measured by EDX and XRR, and the growth rate increases with temperature, ranging from about 0.12 Å/cycle at 225 °C to 0.35 Å/cycle at 275 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition temperature (°C) | Growth rate (Å cycle⁻¹) |\\n|---|---|\\n| 225 | 0.12 |\\n| 230 | 0.15 |\\n| 250 | 0.25 |\\n| 275 | 0.35 |\\n| 280 | 0.33 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the deposition temperature generally improves the growth rate and can enhance film uniformity by promoting consistent precursor adsorption and reaction across the surface. However, excessively high temperatures might risk precursor decomposition or unwanted side reactions, so optimization is required to balance growth rate and film quality.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the growth rate on iridium is higher than on Al2O3 at similar deposition temperatures. For example, at 275 °C, the growth rate on iridium is 0.35 Å/cycle, while on Al2O3 it is 0.23 Å/cycle.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the deposition temperature increases from 225 °C to 275 °C, the growth rate of ruthenium films increases almost linearly. At lower temperatures, the growth rate is slower (around 0.12 Å/cycle) and reaches approximately 0.35 Å/cycle at higher temperatures. This indicates that higher temperatures enhance the reactivity of the RuCp2 precursor and improve film deposition efficiency.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Iridium provides a higher nucleation density, promoting faster film growth, Al₂O₃ shows a longer incubation period at the beginning, reducing the overall growth rate, Substrate type influences the minimum temperature required for film growth due to precursor reactivity differences\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":528,"height":359}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"64","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":528,"height":359,"image_format":"jpeg","image_sha256":"ad14f55fb71e6d291daa4ef9c93dba4dfe7ce9607c3de5c9bd65d3c5be1840d0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_66_figure_8.jpg","caption":"Figure 8. $P - V$ hysteresis loops for (a) Fe-; (b) Co-; and (c) Ni-doped $\\mathrm{ZnO}$ films.","id":"train/atomic-layer-deposition/experimental-usecase/66/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/66/figure_8","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the polarization (P) as a function of applied voltage (V) for ZnO:Fe\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the polarization (P) as a function of applied voltage (V) for ZnO:Co\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the polarization (P) as a function of applied voltage (V) for ZnO:Ni\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Applied Voltage (V) | P (μC/cm²) at 1.5 kHz | P (μC/cm²) at 3 kHz | P (μC/cm²) at 5 kHz |\\n|---|---|---|---|\\n| -3.0 | -40 | -38 | -36 |\\n| -2.0 | -30 | -28 | -26 |\\n| -1.0 | -15 | -14 | -13 |\\n| 0.0 | 0 | 0 | 0 |\\n| 1.0 | 15 | 14 | 13 |\\n| 2.0 | 30 | 28 | 26 |\"},{\"panel_id\":\"b\",\"text\":\"| Applied Voltage (V) | P (μC/cm²) |\\n|---|---|\\n| -3.0 | -40 |\\n| -2.0 | -30|\\n| -2.0 | -30 |\\n| -1.0 | -15 |\\n| 0.0 | 0 |\\n| 1.0 | 15 |\\n| 2.0 | 30 |\"},{\"panel_id\":\"c\",\"text\":\"| Applied Voltage (V) | P (μC/cm²) |\\n|---|---|\\n| -3.0 | -40 |\\n| -2.0 | -30 |\\n| -1.0 | -15 |\\n| 0.0 | 0 |\\n| 1.0 | 15 |\\n| 2.0 | 30 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ferroelectric P−V hysteresis loops for TM doped ZnO films are measured using a Sawyer−Tower circuit\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Fe-doped layers (Figure 8a) reveal a ferroelectric like behavior with a well-resolved P−V loop and the polarization increasing with the decreasing frequency\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The results for Ni- and Co-doped layers, though showing some P− V hysteresis, are not that convincing for the existence of ferroelectricity\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":379,"height":316},{"panel_id":"b","x":380,"y":4,"width":377,"height":311},{"panel_id":"c","x":759,"y":6,"width":363,"height":309}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/Paskaleva et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"66","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":1125,"height":317,"image_format":"jpeg","image_sha256":"9af67368603bedf2f92010824937427ea3b105b1936f11492060c30907c3efa3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_69_FIG10_a.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/69/FIG10_a","sample_id":"atomic-layer-deposition/experimental-usecase/69/FIG10_a","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":4,"width":659,"height":483}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG10_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG10_a.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/Ruben Blomme et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"69","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"not_found"},"width":664,"height":491,"image_format":"jpeg","image_sha256":"40c99107efd48e5720d438ce900eb5c418e6a4d439a1521576c4d47f2d8105d5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_7_95837a0f09f651369047f60c135b85eaee479b486b3df8a1df6a96de654e6120.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/7/95837a0f09f651369047f60c135b85eaee479b486b3df8a1df6a96de654e6120","sample_id":"atomic-layer-deposition/experimental-usecase/7/95837a0f09f651369047f60c135b85eaee479b486b3df8a1df6a96de654e6120","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Δm₁ (open markers) is consistently higher than Δm₀ (filled markers) across 100–400 °C for all three cycle-time sequences. Δm₁ peaks around ~250–300 °C (depending on marker set) and then trends downward toward 400 °C, while Δm₀ stays comparatively flat through ~350 °C. The 5–2–2–5 s condition shows a notable Δm₀ increase at ~400 °C relative to the other sequences. Overall, varying the first-step pulse time mainly impacts Δm₁ magnitude and its temperature dependence, more than Δm₀.\"},{\"panel_id\":\"b\",\"text\":\"Two cycle-time sequences are compared, and the separation between Δm₁ (open) and Δm₀ (filled) is maintained across the full temperature range. Δm₁ rises toward a maximum near ~300 °C and then decreases at higher temperature, whereas Δm₀ remains near ~35–40 with only modest changes. Differences between the two purge-time conditions are clearer in Δm₁ than in Δm₀. The data suggest temperature sensitivity is concentrated in the Δm₁ response rather than the baseline Δm₀ increment.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Growth temperature (°C) | Δm1 (0.5-2-2-5 s, open ○) | Δm1 (2-2-2-5 s, open □) | Δm1 (5-2-2-5 s, open △) | Δm0 (0.5-2-2-5 s, filled ●) | Δm0 (2-2-2-5 s, filled ■) | Δm0 (5-2-2-5 s, filled ▲) |\\n|---|---:|---:|---:|---:|---:|---:|\\n| 100 | ~86 | ~92 | ~88 | ~44 | ~45 | ~47 |\\n| 150 | ~75 | ~84 | ~85 | ~35 | ~39 | ~40 |\\n| 200 | ~88 | ~90 | ~95 | ~33 | ~37 | ~37 |\\n| 250 | ~88 | ~105 | ~102 | ~36 | ~37 | ~37 |\\n| 300 | ~101 | ~100 | ~112 | ~37 | ~38 | ~44 |\\n| 350 | ~96 | ~101 | ~100 | ~38 | ~39 | ~39 |\\n| 400 | ~90 | ~85 | ~98 | ~45 | ~45 | ~64 |\"},{\"panel_id\":\"b\",\"text\":\"| Growth temperature (°C) | Δm1 (2-2-0.5-5 s, open ○) | Δm1 (2-2-5-5 s, open □) | Δm0 (2-2-0.5-5 s, filled ●) | Δm0 (2-2-5-5 s, filled ■) |\\n|---|---:|---:|---:|---:|\\n| 100 | ~80 | ~99 | ~41 | ~52 |\\n| 150 | ~75 | ~90 | ~36 | ~39 |\\n| 200 | ~87 | ~98 | ~34 | ~38 |\\n| 250 | ~89 | ~101 | ~35 | ~37 |\\n| 300 | ~104 | ~110 | ~36 | ~37 |\\n| 350 | ~98 | ~99 | ~38 | ~35 |\\n| 400 | ~83 | ~87 | ~40 | ~40 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The third step (purge time) was varied between 0.5 s and 5 s.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. 0.5 - 2 - 2 - 5 s\\n, 2. 2 - 2 - 2 - 5 s\\n, 3. 5 - 2 - 2 - 5 s\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It varies only weakly, staying clustered near ~35–45 arbitrary units across most of 100–350 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Δm₁ is systematically larger than Δm₀ across the entire temperature range, typically ~80–110 versus ~30–45 in arbitrary units. Δm₁ also shows a clearer temperature response, with a broad maximum around ~250–300 °C before decreasing at higher temperature. By contrast, Δm₀ is comparatively flat through ~350 °C, with only small offsets between marker sets. The main temperature sensitivity therefore sits in Δm₁ rather than Δm₀.\"}]}]","bbox":[{"panel_id":"b","x":0,"y":581,"width":470,"height":556},{"panel_id":"a","x":4,"y":1,"width":467,"height":554}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/95837a0f09f651369047f60c135b85eaee479b486b3df8a1df6a96de654e6120.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/95837a0f09f651369047f60c135b85eaee479b486b3df8a1df6a96de654e6120.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/Aarik et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"not_found"},"width":472,"height":1139,"image_format":"jpeg","image_sha256":"501a721d35369db0fbed069278c6718ac94a8588ca1d4d07d992f80860bf5796","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_7_fig2.jpg","caption":"Fig.2. $\\Delta m_0$ and $\\Delta m_1$ as functions of growth temperature. Buffer layers were deposited at 100 and $300^{\\circ}\\mathrm{C}$ . The $\\mathrm{TiCl_4}$ pulse time, first purge time, $\\mathrm{H}_2\\mathrm{O}$ pulse time, and second purge time were 2, 2, 2, and $5\\mathrm{s}$ , respectively.","id":"train/atomic-layer-deposition/experimental-usecase/7/fig2","sample_id":"atomic-layer-deposition/experimental-usecase/7/fig2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Scatter plot comparing mass increments Δm₀ and Δm₁ vs. growth temperature for films grown on buffer layers deposited at 100 °C (circles) and 300 °C (squares). It shows that the 300 °C buffer layer generally results in higher or increasing Δm₁ values, particularly above 200 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Growth Temp (°C) | Buffer 100°C: Δm0 (●) | Buffer 100°C: Δm1 (○) | Buffer 300°C: Δm0 (■) | Buffer 300°C: Δm1 (□) |\\n|---|---|---|---|---|\\n| 100 | ~50 | ~95 | ~45 | ~92 |\\n| 150 | ~35 | ~75 | ~40 | ~85 |\\n| 200 | ~30 | ~68 | ~38 | ~92 |\\n| 250 | ~25 | ~60 | ~38 | ~105 |\\n| 350 | ~28 | ~62 | ~40 | ~100 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. 2 s (TiCl₄)\\n, 2. 2 s (First purge)\\n, 3. 2 s (H₂O pulse)\\n, 4. 5 s (Second purge)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the open symbols are consistently plotted higher on the y-axis than the corresponding filled symbols.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The buffer layer deposited at 300 °C (open squares) generally results in significantly higher Δm₁ values compared to the buffer deposited at 100 °C (open circles). This difference is most notable at higher growth temperatures (above 200 °C), where the 300 °C buffer sample shows an increasing trend, reaching values over 100 units, while the 100 °C buffer sample decreases to around 60 units.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The temperature at which the buffer layer was grown (300 °C for squares vs 100 °C for circles).\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":458,"height":547}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/Aarik et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":461,"height":553,"image_format":"jpeg","image_sha256":"9f2d1979ee9d5f9d98c358cf3ad1817ecc2df349f6e11f4b8162d6ee0e5dcf0a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_7_fig6.jpg","caption":"Fig.6. $\\Delta m_0$ , $\\Delta m_1$ and $\\Delta m_1 - \\Delta m_2^{\\prime}$ recorded at $350^{\\circ}\\mathrm{C}$ as functions of $\\mathrm{TiCl_4}$ pulse time. The first purge time, $\\mathrm{H}_2\\mathrm{O}$ pulse time, and second purge time were 10, 2 and $5\\mathrm{s}$ , respectively.","id":"train/atomic-layer-deposition/experimental-usecase/7/fig6","sample_id":"atomic-layer-deposition/experimental-usecase/7/fig6","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows Δm₀, Δm₁, and Δm₁ − Δm₂′ as functions of TiCl₄ pulse time at 350 °C. Δm₁ and Δm₁ − Δm₂′ increase rapidly at short pulse times and saturate beyond ~2 s, consistent with self-limiting surface adsorption. In contrast, Δm₀ continues to increase with pulse time, indicating an additional non-saturating mass-gain contribution. The divergence between Δm₁ saturation and Δm₀ growth suggests the onset of parasitic or CVD-like processes at longer TiCl₄ exposures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TiCl4 Pulse Time (s) | Δm1 (Triangles) | Δm1 - Δm2' (Squares) | Δm0 (Circles) |\\n|---|---|---|---|\\n| 0.5 | ~82 | ~69 | ~37 |\\n| 1.0 | ~84 | ~73 | ~40 |\\n| 2.0 | ~88 | ~74 | ~41 |\\n| 5.0 | ~88 | ~75 | ~43 |\\n| 10.0 | ~88 | ~80 | ~50 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"350 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes—closer to Δm₁.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Δm₁ rises rapidly at short pulse times and then plateaus, indicating saturation of surface-limited reactions. Δm₀, however, continues to increase with pulse time, suggesting an additional mass-gain mechanism that does not self-limit. This contrast implies that extended precursor exposure contributes to non-ideal growth behavior.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Since Δm₁ saturates by ~2 s, longer TiCl₄ pulses do not improve self-limiting growth but instead promote parasitic mass gain. Optimizing pulse time near the saturation threshold minimizes cycle time while avoiding unwanted CVD-like contributions.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":4,"width":464,"height":441}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/Aarik et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":467,"height":447,"image_format":"jpeg","image_sha256":"3e5994ac832b2a5b794cb6b10e666cb760e9ec8a75afde12b2709073ec50d748","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_7_fig8.jpg","caption":"Fig.8. $\\Delta m_0 / (\\Delta m_1 - \\Delta m_2')$ as a function of growth temperature determined at different $\\mathrm{TiCl_4}$ pulse times. Buffer layers were grown at temperatures of 100 and $300^{\\circ}\\mathrm{C}$ . Notation of cycle times is the same as in Fig. 3.","id":"train/atomic-layer-deposition/experimental-usecase/7/fig8","sample_id":"atomic-layer-deposition/experimental-usecase/7/fig8","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Scatter plot showing the ratio Δm₀/(Δm₁−Δm₂) as a function of growth temperature (~100–400 °C) for three different cycle sequences where the first pulse time varies (0.5 s, 2 s, 5 s). The ratio generally decreases with temperature up to ~250–300 °C for the longer pulse-time conditions before increasing again at higher temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Growth Temp (°C) | 5s Pulse (Squares) | 0.5s Pulse (Open Circ) | 2s Pulse (Filled Circ) | 2s Pulse (Triangles, TB=100) |\\n|---|---|---|---|---|\\n| 100 | ~0.56 | ~0.52 | ~0.50 | - |\\n| 150 | ~0.50 | ~0.50 | ~0.50 | ~0.53 |\\n| 200 | ~0.41 | ~0.40 | ~0.42 | ~0.48 |\\n| 250 | ~0.39 | ~0.41 | ~0.39 | ~0.46 |\\n| 300 | ~0.44 | ~0.40 | ~0.43 | - |\\n| 350 | ~0.45 | ~0.44 | ~0.45 | ~0.47 |\\n| 400 | ~0.75 | ~0.58 | ~0.65 | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Δm₀/(Δm₁−Δm₂)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the ratio increases significantly from approximately 0.44 to 0.75 in that temperature range.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mass ratio for the 5 s pulse time sample starts at approximately 0.56 at 100 °C and decreases steadily as the temperature rises, reaching a minimum value around 250 °C. After this point, the trend reverses. Above 300 °C, the ratio increases sharply, reaching its maximum value of ~0.75 at 400 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"100 °C and 300 °C.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":5,"width":459,"height":473}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/Aarik et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":464,"height":480,"image_format":"jpeg","image_sha256":"3e41555eb1be74ee3ef2faa94de88e5240d8663b7993054cc0f37807fe567fda","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_7_fig_3.jpg","caption":"Fig. 3. $\\Delta m_0$ and $\\Delta m_1$ as functions of substrate temperature measured at (a) different $\\mathrm{TiCl_4}$ pulse times and (b) different $\\mathrm{H}_2\\mathrm{O}$ pulse times. Buffer layer was grown at $300^{\\circ}\\mathrm{C}$ . Cycle times shown in the inset denote the $\\mathrm{TiCl_4}$ pulse time, first purge time, $\\mathrm{H}_2\\mathrm{O}$ pulse time, and second purge time, respectively. Fig. 5. $\\Delta m_0$ as a function of (a) the first purge time and (b) the second purge time. Notation of cycle times is the same as in Fig. 3. Buffer layer was deposited at $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/7/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/7/fig_3","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Δm₀ decreases sharply with increasing first purge time up to ~1–2 s and then plateaus for both growth temperatures. At all purge times, Δm₀ remains higher at 150 °C than at 350 °C.\"},{\"panel_id\":\"b\",\"text\":\"A similar behavior is observed when varying the second purge time, with Δm₀ dropping rapidly at short purge times and stabilizing beyond ~2 s. The persistence of a temperature offset indicates that growth temperature influences the net mass increment even after sufficient purging.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| First purge time x (s) | Δm₀ at 150 °C (circles) | Δm₀ at 350 °C (squares) |\\n|---|---|---|\\n| 0.1 | ~56 | ~41 |\\n| 0.5 | ~44 | ~35 |\\n| 1.0 | ~41 | ~36 |\\n| 2.0 | ~41 | ~34 |\\n| 5.0 | ~39 | ~30 |\\n| 10.0 | ~40 | ~30 |\"},{\"panel_id\":\"b\",\"text\":\"| Second purge time x (s) | Δm₀ at 150 °C (circles) | Δm₀ at 350 °C (squares) |\\n|---|---|---|\\n| 0.1 | ~54 | ~43 |\\n| 0.5 | ~45 | ~38 |\\n| 1.0 | ~45 | ~34 |\\n| 2.0 | ~42 | ~34 |\\n| 5.0 | ~40 | ~35 |\\n| 10.0 | ~40 | ~35 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The similar purge-time dependence indicates that both purge steps play comparable roles in removing residual species. Once a critical purge duration is reached, surface reactions become self-limiting regardless of purge order.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first purge step following the TiCl₄ pulse.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"b","x":1,"y":347,"width":471,"height":326},{"panel_id":"a","x":1,"y":4,"width":471,"height":323}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/Aarik et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":475,"height":677,"image_format":"jpeg","image_sha256":"1872bdd68afa790590f4f4ddf2f8fc5755072f9980c346050048fd9f0e6211a5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_7_fig_4.jpg","caption":"Fig. 4. $\\Delta m_2^{\\prime}$ as a function of growth temperature recorded at different $\\mathrm{TiCl_4}$ pulse times. Buffer layers were deposited at $T_{\\mathrm{B}} = 100$ and $300^{\\circ}\\mathrm{C}$ . Notation of cycle times is the same as in Fig. 3.","id":"train/atomic-layer-deposition/experimental-usecase/7/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/7/fig_4","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows Δm₂′ as a function of growth temperature (≈100–400 °C) for different TiCl₄ pulse-time sequences, with buffer layers grown at TB = 100 °C and TB = 300 °C. Δm₂′ increases with temperature for all conditions, with a pronounced rise at ≳300 °C. At lower growth temperatures (≈100–250 °C), samples with TB = 100 °C consistently exhibit lower Δm₂′ values than those with TB = 300 °C. At higher temperatures, Δm₂′ converges to larger values across pulse times, indicating reduced sensitivity to buffer-layer temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Growth Temp (°C) | 5 s pulse (■) | 2 s pulse (●, TB = 300 °C) | 0.5 s pulse (○) | 2 s pulse (▲, TB = 100 °C) |\\n|---|---|---|---|---|\\n| 100 | ~4.0 | ~3.0 | — | ~2.0 |\\n| 150 | ~3.0 | ~5.0 | — | ~4.0 |\\n| 200 | ~6.0 | ~7.0 | ~6.5 | ~4.5 |\\n| 250 | ~7.0 | ~9.0 | — | ~5.0 |\\n| 300 | ~13.0 | ~13.0 | ~11.0 | — |\\n| 350 | ~13.0 | ~13.0 | ~11.0 | ~10.0 |\\n| 400 | ~13.0 | ~15.0 | ~12.0 | — |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Δm₂ (arbitrary units).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, Δm₂ generally increases with increasing growth temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At lower growth temperatures (≈100–250 °C), the TB = 100 °C triangle series sits below the TB = 300 °C circle/square series, meaning Δm2′ is smaller when the buffer is grown at 100 °C. For example, near 200 °C the triangle point is around ~4–5, while TB=300 °C points cluster closer to ~6–7. At higher temperatures (≥300 °C), Δm2′ rises for all conditions and the separation becomes less consistent, with the largest values appearing near 400 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. 0.5 - 2 - 2 - 5 s\\n, 2. 2 - 2 - 2 - 5 s\\n, 3. 5 - 2 - 2 - 5 s\"}]}]","bbox":[{"panel_id":"a","x":1,"y":1,"width":459,"height":391}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/Aarik et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":461,"height":391,"image_format":"jpeg","image_sha256":"59835e988ca650bbf7851e901b18be91b4bf897664e52dce14efa0bb28984a26","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_10_figure_4.jpg","caption":"Figure 4. Film thickness measured by in situ SE as a function of the $\\mathrm{In}_2\\mathrm{O}_3\\cdot \\mathrm{H}$ ALD cycles on $\\mathrm{SiO}_2$ open triangles) and on a-Si:H (open circles). Ex situ SE measurements were taken only for 600 and 780 ALD cycles on a-Si:H. Above 600 ALD cycles the selectivity of the process appears to degrade.","id":"train/atomic-layer-deposition/simulation-usecase/10/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/10/figure_4","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between ALD cycles and the thickness of In_{2}O_{3}:H, with SiO_{2} and a-Si:H marked by different symbols\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycles | SiO₂ (nm) | a-Si:H (nm) |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 50 | 0 | 0 |\\n| 100 | 2 | 0 |\\n| 150 | 7 | 0 |\\n| 200 | 12 | 0 |\\n| 250 | 17 | 0 |\\n| 300 | 22 | 0 |\\n| 350 | 27 | 0 |\\n| 400 | 32 | 0 |\\n| 450 | 38 | 0 |\\n| 500 | 43 | 0 |\\n| 550 | 48 | 0 |\\n| 600 | 53 | 0 |\\n| 650 | 58 | 0 |\\n| 700 | 63 | 0 |\\n| 750 | 68 | 0 |\\n| 800 | 75 | 10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"x-axis: ALD cycles\\n\\n, y-axis: In₂O₃:H thickness (nm)\\n\\n, Triangles: SiO₂ substrate\\n\\n, Circles: a-Si:H substrate\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"On SiO₂, the film thickness increases steadily with cycle number after a small initial delay, indicating normal nucleation and a roughly constant growth per cycle. On a-Si:H, the thickness stays close to zero across most of the cycle range, indicating a long nucleation delay. Only at very high cycle count does measurable growth begin to appear on a-Si:H.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"SiO₂ typically presents oxygen-containing / hydroxylated sites that can readily react with many ALD precursors, enabling fast nucleation. In contrast, a-Si:H is H-terminated and comparatively less reactive toward oxide ALD chemistry until it is modified (e.g., oxidized or activated). The plot is consistent with that difference: rapid nucleation on SiO₂ and strongly delayed nucleation on a-Si:H.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Area-selective ALD relies on having one surface where growth proceeds and another where growth is delayed or suppressed over the desired number of cycles. The strong inhibition on a-Si:H relative to SiO₂ provides that selectivity window. This enables pattern formation by locally converting only selected regions into the “fast nucleation” surface while keeping the rest in the “slow nucleation” state.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":1,"width":520,"height":387}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":525,"height":389,"image_format":"jpeg","image_sha256":"8ec2c668760cfc60c12ec924c25d269245c6f1f2f46bdb724e75405942fa248f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_12.jpg","caption":"FIG. 12. (a) Average wafer coverage and (b) $3\\sigma$ wafer thickness variability for an ideal and a soft-saturating ALD process. Simulation conditions are the same as for Fig. 10(c).","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_12","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_12","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the average coverage over time for two conditions: 'Ideal' and 'f2 = 0.1'. The 'Ideal' condition reaches a plateau at approximately 0.9, while 'f2 = 0.1' reaches a plateau slightly below.\"},{\"panel_id\":\"b\",\"text\":\"The line chart illustrates the 3σ variability percentage over time for two conditions: 'Ideal' and 'f2 = 0.1'. Both conditions show a decreasing trend, with 'Ideal' reaching near-zero variability around 1.0 seconds and 'f2 = 0.1' stabilizing around 1.5%.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time, s | Average coverage f_2 = 0.1 | Average coverage Ideal |\\n|---|---|---|\\n| 0.0 | 0.0 | 0.0 |\\n| 0.5 | 0.7 | 0.75 |\\n| 1.0 | 0.9 | 1.0 |\\n| 1.5 | 0.9 | 1.0 |\\n| 2.0 | 0.9 | 1.0 |\\n| 2.5 | 0.9 | 1.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Time, s | 3σ variability (%) f_2 = 0.1 | 3σ variability (%) Ideal |\\n|---|---|---|\\n| 1.0 | 3.0 | 0 |\\n| 1.5 | 2.0 | 0 |\\n| 2.0 | 1.5 | 0 |\\n| 2.5 | 1.5 | 0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is 0% for the ideal case and about 1.5% for f_2 = 0.1.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Near 0 s, the reaction is not saturated and the surface thickness is highly dependent on dose time, which also means the surface thickness varies a lot in this region. When the surface starts to become saturated, the surface thickness no longer depends on the dose time (ideal case) and only very little for the non-ideal case. In this last case, the surface thickness becomes much less variable, which is reflected in the figure as the variability plateaus.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is 1.0 for the ideal case and about 0.95 for f_2 = 0.1.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The same as in figure 10c.\"}]}]","bbox":[{"panel_id":"a","x":14,"y":27,"width":657,"height":394},{"panel_id":"b","x":32,"y":452,"width":639,"height":397}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":700,"height":853,"image_format":"jpeg","image_sha256":"d4979ee43c00b05e84ef645decb53d84b07fb2160704abbc68d74140ac98e7d8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_15.jpg","caption":"FIG. 15. Evolution of the average coverage (a) and $3\\sigma$ variability (b) in $300\\mathrm{mm}$ wafers for two values of by-product reaction probability: $\\beta_{bp} = 10^{-4}$ and $\\beta_{bp} = 10^{-3}$ . The precursor reactivity is $\\beta_{10} = 10^{-2}$ .","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_15","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_15","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the average coverage over time for two different βbp values, where βbp = 10-4 and βbp = 10-3.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the 3σ variability over time for two different βbp values, where βbp = 10-4 and βbp = 10-3.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time, s | Average coverage βbp = 10-4 | Average coverage βbp = 10-3 |\\n|---|---|---|\\n| 0.0 | 0.0 | 0.0 |\\n| 0.5 | 0.4 | 0.4 |\\n| 1.0 | 0.85 | 0.8 |\\n| 1.5 | 1.0 | 0.85 |\\n| 2.0 | 1.0 | 0.85 |\\n| 2.5 | 1.0 | 0.85 |\\n| 3.0 | 1.0 | 0.85 |\"},{\"panel_id\":\"b\",\"text\":\"| Time, s | 3σ variability (%) βbp = 10-4 | 3σ variability (%) βbp = 10-3 |\\n|---|---|---|\\n| 1.0 | 95 | 80 |\\n| 1.5 | 10 | 20 |\\n| 2.0 | 2 | 20 |\\n| 2.5 | 2 | 20 |\\n| 3.0 | 2 | 20 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 80 for βbp = 10-3 and 90 for βbp = 10-4.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Around 20 for βbp = 10-3 and 2 for βbp = 10-4.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 0.4.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 0.85 for βbp = 10-3 and 1.00 for βbp = 10-4.\"}]}]","bbox":[{"panel_id":"a","x":35,"y":24,"width":638,"height":399},{"panel_id":"b","x":20,"y":441,"width":652,"height":406}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":677,"height":850,"image_format":"jpeg","image_sha256":"87c049f1194e0bf91c4bdd66f976cb934a0cd2b14bfd7a4e9ab5a157f1575d1c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_19_figure_2.jpg","caption":"Figure 2. Comparison of electrical characteristics of the PEALD-IGZO TFTs deposited using $\\mathrm { O } _ { 2 }$ and $\\mathrm { N } _ { 2 } \\mathrm { O }$ plasma reactants. (a) Transfer curves and (b) PBTS results of the IGZO TFTs. XPS (c) O 1s and (d) N 1s peaks of the IGZO films.","id":"train/atomic-layer-deposition/simulation-usecase/19/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/19/figure_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the drain current–gate voltage characteristics of IGZO TFTs fabricated under different ambient conditions. The shift in threshold voltage reflects changes in carrier concentration and device switching behavior.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the positive bias temperature stress (PBTS) stability of IGZO TFTs measured at 95 °C and an electric field of 2 MV/cm. Differences in threshold voltage shift indicate variations in stress reliability under different ambients.\"},{\"panel_id\":\"c\",\"text\":\"The figure presents the O 1s XPS spectra of IGZO films processed under different ambient conditions. The relative peak areas reveal changes in lattice oxygen and oxygen-defect concentrations.\"},{\"panel_id\":\"d\",\"text\":\"The figure shows the N 1s XPS spectra of IGZO films grown under different ambient conditions. The presence and intensity of the N 1s peak confirm nitrogen incorporation into the IGZO matrix.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gate Voltage (V) | Drain Current (A) | Condition |\\n|-----------------:|-----------------:|------------------|\\n| -6 | 10⁻¹² | O₂⁺ 1 s |\\n| -6 | 10⁻¹² | N₂O⁺ 1 s |\\n| -6 | 10⁻¹³ | N₂O⁺ 5 s |\\n| -5 | 10⁻¹¹ | O₂⁺ 1 s |\\n| -5 | 10⁻¹¹ | N₂O⁺ 1 s |\\n| -5 | 10⁻¹² | N₂O⁺ 5 s |\\n| -4 | 10⁻¹⁰ | O₂⁺ 1 s |\\n| -4 | 10⁻¹⁰ | N₂O⁺ 1 s |\\n| -4 | 10⁻¹¹ | N₂O⁺ 5 s |\\n| -3 | 10⁻⁹ | O₂⁺ 1 s |\\n| -3 | 10⁻⁹ | N₂O⁺ 1 s |\\n| -3 | 10⁻¹⁰ | N₂O⁺ 5 s |\\n| -2 | 10⁻⁷ | O₂⁺ 1 s |\\n| -2 | 10⁻⁷ | N₂O⁺ 1 s |\\n| -2 | 10⁻⁸ | N₂O⁺ 5 s |\\n| -1 | 10⁻⁵ | O₂⁺ 1 s |\\n| -1 | 10⁻⁵ | N₂O⁺ 1 s |\\n| -1 | 10⁻⁶ | N₂O⁺ 5 s |\\n| 0 | 10⁻⁴ | O₂⁺ 1 s |\\n| 0 | 10⁻⁴ | N₂O⁺ 1 s |\\n| 0 | 10⁻⁵ | N₂O⁺ 5 s |\\n| 1 | 10⁻³ | O₂⁺ 1 s |\\n| 1 | 10⁻³ | N₂O⁺ 1 s |\\n| 1 | 10⁻⁴| N₂O⁺ 5 s |\\n| 2 | 10⁻³| O₂⁺ 1 s |\\n| 2 | 10⁻³ | N₂O⁺ 1 s |\\n| 2 | 10⁻³| N₂O⁺ 5 s |\\n| 3 | 10⁻³ | O₂⁺ 1 s |\\n| 3 | 10⁻³ | N₂O⁺ 1 s |\\n| 3 | 10⁻³ | N₂O⁺ 5 s |\\n| 4 | 10⁻³ | O₂⁺ 1 s |\\n| 4 | 10⁻³ | N₂O⁺ 1 s |\\n| 4 | 10⁻³ | N₂O⁺ 5 s |\"},{\"panel_id\":\"b\",\"text\":\"| Gate Voltage (V) | Drain Current (A) | Condition |\\n|-----------------:|------------------:|----------------|\\n| -6 | 10⁻¹² | O₂⁺ 1 s |\\n| -6 | 10⁻¹² | N₂O⁺ 1 s |\\n| -6 | 10⁻¹² | N₂O⁺ 5 s |\\n| -5 | 10⁻¹² | O₂⁺ 1 s |\\n| -5 | 10⁻¹² | N₂O⁺ 1 s |\\n| -5 | 10⁻¹² | N₂O⁺ 5 s |\\n| -4 | 10⁻¹¹ | O₂⁺ 1 s |\\n| -4 | 10⁻¹¹ | N₂O⁺ 1 s |\\n| -4 | 10⁻¹¹ | N₂O⁺ 5 s |\\n| -3 | 10⁻¹⁰ | O₂⁺ 1 s |\\n| -3 | 10⁻¹⁰ | N₂O⁺ 1 s |\\n| -3 | 10⁻¹⁰ | N₂O⁺ 5 s |\\n| -2 | 10⁻⁸ | O₂⁺ 1 s |\\n| -2 | 10⁻⁸ | N₂O⁺ 1 s |\\n| -2 | 10⁻⁸ | N₂O⁺ 5 s |\\n| -1 | 10⁻⁶ | O₂⁺ 1 s |\\n| -1 | 10⁻⁶ | N₂O⁺ 1 s |\\n| -1 | 10⁻⁶ | N₂O⁺ 5 s |\\n| 0 | 10⁻⁵ | O₂⁺ 1 s |\\n| 0 | 10⁻⁵ | N₂O⁺ 1 s |\\n| 0 | 10⁻⁵ | N₂O⁺ 5 s |\\n| 1 | 10⁻⁴ | O₂⁺ 1 s |\\n| 1 | 10⁻⁴ | N₂O⁺ 1 s |\\n| 1 | 10⁻⁴ | N₂O⁺ 5 s |\\n| 2 | 10⁻⁴ | O₂⁺ 1 s |\\n| 2 | 10⁻⁴ | N₂O⁺ 1 s |\\n| 2 | 10⁻⁴ | N₂O⁺ 5 s |\\n| 3 | 10⁻⁴ | O₂⁺ 1 s |\\n| 3 | 10⁻⁴ | N₂O⁺ 1 s |\\n| 3 | 10⁻⁴ | N₂O⁺ 5 s |\\n| 4 | 10⁻⁴ | O₂⁺ 1 s |\\n| 4 | 10⁻⁴ | N₂O⁺ 1 s |\\n| 4 | 10⁻³ | N₂O⁺ 5 s |\"},{\"panel_id\":\"c\",\"text\":\"| Binding energy (eV) | Intensity (a.u.) |\\n|---|---|\\n|534 | 70.5% |\\n|532 | 22.5% |\\n|530 | 7.0% |\"},{\"panel_id\":\"d\",\"text\":\"| Binding Energy (eV) | Normalized Intensity | Condition | Remark |\\n|-------------------:|---------------------:|------------------|--------|\\n| 408 | 0.0 | All O₂⁺ 1 s | — |\\n| 408 | 0.0 | All N₂O⁺ 1 s | — |\\n| 408 | 0.1 | All N₂O⁺ 5 s | — |\\n| 404 | 0.0 | All O₂⁺ 1 s | — |\\n| 404 | 0.1 | All N₂O⁺ 1 s | — |\\n| 404 | 0.1 | All N₂O⁺ 5 s | — |\\n| 400 | 0.2 | All O₂⁺ 1 s | — |\\n| 400 | 0.2 | All N₂O⁺ 1 s | — |\\n| 400 | 0.2 | All N₂O⁺ 5 s | — |\\n| 396 | 1.0 | All O₂⁺ 1 s | Peak |\\n| 396 | 1.0 | All N₂O⁺ 1 s | Peak |\\n| 396 | 1.0 | All N₂O⁺ 5 s | Peak |\\n| 392 | 0.2 | All O₂⁺ 1 s | — |\\n| 392 | 0.2 | All N₂O⁺ 1 s | — |\\n| 392 | 0.2 | All N₂O⁺ 5 s | — |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Metal–nitrogen (Ga–N or M–N) bonds. This indicates successful incorporation of nitrogen into the oxide lattice via anion substitution, which helps passivate oxygen vacancies and improve device stability.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Decrease. The relative area of the O𝑑𝑒𝑓 peak decreases from 22.5% in the O₂ sample to 19.9% in the N₂O (5 s) sample, indicating a reduction in oxygen vacancy concentration.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The curves shift to the right, indicating that N2O plasma treatment increases the turn-on voltage compared to the O2 plasma reference, likely due to a reduction in carrier concentration or modification of interface traps.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lower ΔV𝑇𝐻. The N₂O-treated devices (Red/Blue) exhibit significantly smaller threshold voltage shifts under stress compared to the O₂ reference (Black), which is critical for maintaining stable current driving in OLED pixels.\"}]}]","bbox":[{"panel_id":"a","x":45,"y":44,"width":372,"height":400},{"panel_id":"b","x":477,"y":0,"width":903,"height":449},{"panel_id":"c","x":76,"y":501,"width":864,"height":470},{"panel_id":"d","x":1025,"y":562,"width":363,"height":407}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/Dong-Gyu Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1389,"height":972,"image_format":"jpeg","image_sha256":"a054701d795fbac77bda27ed9618d42eef0d1b9c74b1fb43a4cb9b1abf98cfa4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_19_figure_7.jpg","caption":"Figure 7. PBTS stability of the selective $\\mathrm { N } _ { 2 } \\mathrm { O }$ applied IGZO TFTs. (a) Transfer curves as a function of PBTS time of the reference and selectivel $\\mathrm { N } _ { 2 } \\mathrm { O }$ plasma applied IGZO TFTs. (b) Degree of $\\mathrm { V } _ { \\mathrm { T H } }$ shift after 10000 s of PBTS time for IGZO TFTs.","id":"train/atomic-layer-deposition/simulation-usecase/19/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/19/figure_7","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"grouped bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Transfer characteristics (drain current versus gate voltage) of IGZO TFTs under positive bias temperature stress (PBTS) for devices where individual cation layers (In, Ga, or Zn) are selectively treated with N₂O plasma, showing different degrees of threshold voltage shift.\"},{\"panel_id\":\"b\",\"text\":\"Summary of the corresponding threshold voltage shifts (ΔV_TH), demonstrating that N₂O treatment during the gallium oxide sub-cycle significantly improves stability (~50% reduction), while treatment during the indium oxide sub-cycle degrades stability (≈68% increase in ΔV_TH).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gate voltage (V) | Pristine (A) | 100 s (A) | 500 s (A) | 1500 s (A) | 2500 s (A) | 3500 s (A) | 3600 s (A) | 7200 s (A) | 10000 s (A) |\\n|------------------|--------------|-----------|-----------|------------|------------|------------|------------|------------|-------------|\\n| -6 | 1e-12 | 1e-12 | 1e-12 | 1e-12 | 1e-12 | 1e-12 | 1e-12 | 1e-12 | 1e-12 |\\n| -4 | 1e-11 | 1e-11 | 1e-11 | 1e-11 | 1e-11 | 1e-11 | 1e-11 | 1e-11 | 1e-11 |\\n| -2 | 1e-10 | 1e-10 | 1e-10 | 1e-10 | 1e-10 | 1e-10 | 1e-10 | 1e-10 | 1e-10 |\\n| 0 | 1e-9 | 1e-9 | 1e-9 | 1e-9 | 1e-9 | 1e-9 | 1e-9 | 1e-9 | 1e-9 |\\n| 2 | 1e-7 | 1e-7 | 1e-7 | 1e-7 | 1e-7 | 1e-7 | 1e-7 | 1e-7 | 1e-7 |\\n| 4 | 1e-5 | 1e-5 | 1e-5 | 1e-5 | 1e-5 | 1e-5 | 1e-5 | 1e-5 | 1e-5 |\"},{\"panel_id\":\"b\",\"text\":\"| Controlled cation elements | O₂ 1s (Ref) ΔV_TH (V) | N₂O 1s ΔV_TH (V) | N₂O 5s ΔV_TH (V) |\\n|----------------------------|-----------------------|------------------|------------------|\\n| Indium oxide | ~2.4 | ~1.6 (33% decrease) | ~1.2 (50% decrease) |\\n| Gallium oxide | ~2.0 | ~1.0 (50% decrease) | ~0.8 (60% decrease) |\\n| Zinc oxide | ~1.8 | ~1.7 (8% decrease) | ~1.6 (11% decrease) |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Gallium oxide. The Gallium oxide modification results in a ~50% decrease in ΔV𝑇𝐻 (improved stability), whereas the Indium oxide modification causes a ~68% increase (worsened stability) relative to the reference.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Suppression of oxygen vacancies. Gallium is a strong oxygen binder. Selective N₂O treatment during the Gallium cycle effectively reduces oxygen vacancies and defect states (which act as electron traps) without severely disrupting channel conduction, leading to the most stable device operation.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. For the Zinc Oxide–controlled cation, increasing the N₂O exposure to 5 s significantly increases the instability, resulting in a ΔV𝑇𝐻 of +0.83 V compared to the more stable Gallium condition (+0.45 V).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Selective N₂O on Gallium Oxide. This condition yields the lowest ΔV𝑇𝐻 (+0.45 V) compared to Indium (+1.51 V) or Zinc (+0.83 V), ensuring the most stable switching performance under thermal and bias stress.\"}]}]","bbox":[{"panel_id":"a","x":17,"y":11,"width":905,"height":349},{"panel_id":"b","x":978,"y":38,"width":416,"height":316}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/Dong-Gyu Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1394,"height":364,"image_format":"jpeg","image_sha256":"b44085f6376ab0c47f9d6cdaafd407b19bb616149283cc6b21f19a1b44343b24","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_25_figure_5.jpg","caption":"Figure 5. Growth properties as a function of surface hydroxyl density. (a) Al atoms added vs OH density. (b) Ligand/Al ratio vs surface OH concentration. Present results compared to data from Puurunen.","id":"train/atomic-layer-deposition/simulation-usecase/25/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/25/figure_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows Al atoms added per unit area (Al/nm²) against OH surface density (OH/nm²) for the present study (blue) and Puurunen (black). Both datasets show that generally higher OH surface density corresponds to greater Al uptake.\"},{\"panel_id\":\"b\",\"text\":\"The scatter plot displays the ligand-to-aluminum ratio versus OH surface density for the present study (blue) and Puurunen (black). Generally, the ligand:Al ratio decreases as OH density increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Study| Al atoms added, Al/nm² | OH Surface Density, OH/nm² | \\n|---|---|---|\\n|Puurunen|2.23| 1.48|\\n|Puurunen|2.94| 3.51|\\n|Puurunen|3.71| 5.49|\\n|Puurunen|4.43| 7.48|\\n|Present study|2.78| 2.17|\\n|Present study|3.32| 4.11|\\n|Present study|3.44| 4.08|\\n|Present study|3.62| 4.22|\\n|Present study|3.86| 4.33|\\n|Present study|3.69| 4.49|\\n|Present study|3.12| 4.61|\\n|Present study|4.06| 4.59|\\n|Present study|3.85| 4.72|\\n|Present study|3.86| 5.16|\"},{\"panel_id\":\"b\",\"text\":\"|Study| OH Surface Density, OH/nm² | Ligand : Aluminum Ratio |\\n|---|---|---|\\n|Puurunen|1.18| 2.39|\\n|Puurunen|3.40| 1.84|\\n|Puurunen|6.01| 1.49|\\n|Puurunen|8.78| 1.2|\\n|Present study|2.24| 1.88|\\n|Present study|4.06| 1.68|\\n|Present study|4.13| 1.58|\\n|Present study|4.29| 1.65|\\n|Present study|4.26| 1.59|\\n|Present study|4.47| 1.37|\\n|Present study|4.54| 1.55|\\n|Present study|4.64| 1.48|\\n|Present study|4.69| 1.42|\\n|Present study|5.14| 1.52|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Puurunen's results show a positive correlation. This conclusion is supported by the upward trend of the data points, which rises from left to right. This indicates that as the OH surface density increases (on the x-axis), the number of Al atoms added also increases (on the y-axis).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Puurunen's results show a negative correlation. This is supported by the downward trend of the data points, which descends from left to right. This indicates that as the OH surface density increases, the Ligand : Aluminum Ratio also decreases.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Pruununen’s study covers a wider range of OH surface densities.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":6,"width":561,"height":452},{"panel_id":"b","x":569,"y":3,"width":553,"height":449}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/Kristopher S. Brown et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1125,"height":459,"image_format":"jpeg","image_sha256":"a17496a518bb6a2408d50a52b34263c2089f37bc13b02fb8a6fb41dfa4bd90e3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_15.jpg","caption":"Figure 15. Growth rate of $\\mathsf{HfO_2}$ in different circumstances versus time for the 16th-20th cycles. The thickness of a monolayer of $\\mathsf{HfO_2}$ is $2.8\\dot{A}$ . Cross shows growth rate considering all observed ALD reactions. Circle shows growth rate when direct ligand exchange during oxygen pulse is considered rather than cooperative effect. Triangle shows growth rate when migration process is switched off. [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_15","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_15","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between simulation time and growth rate, with three different conditions represented by different markers: considering all ALD reactions (red +), cooperative effect is excluded (green circles), and when the migration process is switched off (blue triangle). Excl. cooperation gives the highest growth (~1.4–1.6 Å/cycle), incl. all is intermediate (~0.5–0.75 Å/cycle), and excl. migration is lowest (~0.12–0.22 Å/cycle).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Simulation time (s) | Growth rate – incl. all (Å/cycle) | Growth rate – excl. cooperation (Å/cycle) | Growth rate – excl. migration (Å/cycle) |\\n|---|---|---|---|\\n| 0.0064 | 0.75 | 1.58 | 0.19 |\\n| 0.0068 | 0.59 | 1.45 | 0.12 |\\n| 0.0072 | 0.50 | 1.42 | 0.21 |\\n| 0.0076 | 0.50 | 1.42 | 0.22 |\\n| 0.0080 | 0.65 | 1.59 | 0.16 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Excl. cooperation, Incl. all, Excl. migration\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Disabling migration reduces the growth rate compared to the full model.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Migration is more important to sustain growth. The evidence is that when migration is disabled (“excl. migration”), the growth rate collapses to very low values (~0.12–0.22 Å/cycle) at every time point, far below the full model (~0.5–0.75 Å/cycle). In contrast, disabling cooperation (“excl. cooperation”) does not reduce growth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Cooperation hinders film growth in this model. The evidence is that when cooperation is removed (“excl. cooperation”), the growth rate jumps to the highest values in the plot (~1.4–1.6 Å/cycle) across all times, well above the full model (~0.5–0.75 Å/cycle). By contrast, removing migration lowers growth (~0.12–0.22 Å/cycle), so migration is not what limits growth.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":3,"width":638,"height":444}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":644,"height":450,"image_format":"jpeg","image_sha256":"0ffbd08d89218c00f4c08c46e3cc441ee3bb05a7906faccb90545f624916f575","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_28_fig_10.jpg","caption":"Fig. 10. Surface state of the adsorbed complex $-\\mathrm{MCl}_x$ of the precursor vs. process temperature. Circles and squares correspond to experiments with $\\mathrm{ZrO_2}$ from [10] and [11], respectively; triangles correspond to $\\mathrm{HfO_2}$ experiment [6]; dashed and dashed-dotted lines correspond to the present study modeling for $\\mathrm{ZrO_2}$ and $\\mathrm{HfO_2}$ , respectively.","id":"train/atomic-layer-deposition/simulation-usecase/28/fig_10","sample_id":"atomic-layer-deposition/simulation-usecase/28/fig_10","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between temperature (T, °C) and the ratio x = Cl / Me. Data points represent experimental measurements, whereas calculations for Zr and Hf are shown with lines..\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| T,°C | x = Cl / Me |\\n|---|---|\\n| 100 | 2.00 |\\n| 200 | 2.25 |\\n| 300 | 2.30 |\\n| 400 | 2.60 |\\n| 500 | 2.80 |\\n| 600 | 3.00 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No the experimental value does not nicely overlap. Only the Hf experiments of J. Aarik come close, however they are still of by .25 on average.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The calculated values are in the error margins of the data points, so it could be that they overlap.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"They both show an s shape, where initially there is an increase with temperature, but this saturates.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No it is not, the upper limit of the error bars is at 3.50, this would mean that out of four chlorine atoms, still more than three are present. This means that non of them reactive with the surface leading to adsorption.\"}]}]","bbox":[{"panel_id":"a","x":10,"y":8,"width":712,"height":497}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/Maxim Deminsky et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":722,"height":508,"image_format":"jpeg","image_sha256":"ad3a411f1eac5146c5d7cc09bb81c0e4464aa61c4124ed004d7a3cd1002c97be","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_28_fig_11.jpg","caption":"Fig. 11. Temperature dependence of the residual chlorine concentration in the growing film; triangles are experimental points [10], and diamonds are simulation results.","id":"train/atomic-layer-deposition/simulation-usecase/28/fig_11","sample_id":"atomic-layer-deposition/simulation-usecase/28/fig_11","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between temperature and chlorine concentration, indicating a negative correlation where chlorine concentration decreases as temperature increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature, °C | Chlorine concentration, % |\\n|---|---|\\n| 200 | 2.3 |\\n| 250 | 1.5 |\\n| 300 | 1.0 |\\n| 350 | 0.5 |\\n| 400 | 0.1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The temperature has a huge influence on the reaction rates that occur during the ALD cycle. This can be the reason for the higher chlorine content.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"XPS is a technique that can be used to determine the chlorine concentration In this technique, electrons are removed from the material by photons that give insight into the materials composition.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.5%\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":0,"y":8,"width":595,"height":411}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/Maxim Deminsky et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":595,"height":419,"image_format":"jpeg","image_sha256":"59e74a6198d4390a0375566f82fdb3833755375867be2fd5485bded3cfd32002","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_28_fig_6.jpg","caption":"Fig. 6. $\\mathrm{ZrO_2}$ film mass increment as a function of the precursor source temperature. Circles and solid line are experimental [10] and modeling results at the reaction chamber temperature 290 $^\\circ \\mathrm{C}$ ; squares and dashed line are experimental [10] and modeling results at the reaction chamber temperature $180^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/simulation-usecase/28/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/28/fig_6","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the relationship between the mass increment and the ZrCl₄ source temperature for two different reactor temperatures. As the temperature increases, the mass increment also increases, showing a positive correlation, till there is soft-saturation for both reactor temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ZrCl₄ source temperature, °C | Mass increment, a.u. 290|Mass increment, a.u. 180|\\n|---|---|---|\\n| 130 | 0.2 |-|\\n| 135 | 0.3 |-|\\n| 140 | 0.67 |-|\\n| 145 | 0.85 |0.80|\\n| 150 | 0.91 |1.05|\\n| 155 | 0.95 |1.1|\\n| 160 | 1.0 |1.15|\\n| 165 | - |1.20|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lower temperature can lead to more ligand incorporation which in its turn leads to higher mass as Cl is heavier than oxygen.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If this difference is not high enough there can be condensation of the precursor in the reactor, whereas there is always the desire to only work with gas phase species.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the higher source temperature ranges. This is mostly in the saturated growth regime.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.15 a.u.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":7,"width":584,"height":478}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/Maxim Deminsky et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":592,"height":486,"image_format":"jpeg","image_sha256":"116b4df59daba097bdc33ef8cdac32311361077444ccba3b838ad9b03d305870","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_28_fig_7.jpg","caption":"Fig. 7. $\\mathrm{ZrO_2}$ film growth rate (average film mass and thickness increments per cycle) as a function of the process temperature: squares and circles correspond to experimental average film thicknesses and mass increments per cycle [10]. Dashed and solid lines correspond to the calculated results by the minimum and extended mechanism. The dashed area corresponds to sensitivity analysis for the extended mechanism.","id":"train/atomic-layer-deposition/simulation-usecase/28/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/28/fig_7","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between temperature (T °C) and the thickness and mass increment per cycle, experimentally measured and calculated using minimum and extended mechanisms.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| T °C |average increment |\\n|---|---|\\n| 0 | 0.4 | \\n| 100 | 1.2 | \\n| 200 | 1.0 | \\n| 300 | 0.9 |\\n| 400 | 0.75 | \\n| 500 | 0.7 | \\n| 600 | 0.55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The points fall in the range of the extended model and can therefore be fitted with such a model.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There probably is a minimum temperature as the source temperature has to be lower than the processing temperature, but high enough to evaporate the precursor.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.2 a.u./cycle\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Except for some outliers in general the model overestimates the experimental data, even when considering the error bars.\"}]}]","bbox":[{"panel_id":"a","x":9,"y":9,"width":582,"height":442}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/Maxim Deminsky et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":592,"height":452,"image_format":"jpeg","image_sha256":"5a3b4afd7e34583b447a8dc3edc84090e153a1769cea7cc984a428a5959134c2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_28_fig_8.jpg","caption":"Fig. 8. $\\mathrm{HfO_2}$ film growth rate (average film mass and thickness increments per cycle) as a function of the process temperature: squares and circles correspond to experimental results [6,8]. Dashed and solid lines correspond to the calculated results by the minimum and extended mechanism. Dashed area corresponds to sensitivity analysis for the extended mechanism.","id":"train/atomic-layer-deposition/simulation-usecase/28/fig_8","sample_id":"atomic-layer-deposition/simulation-usecase/28/fig_8","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between temperature (T, °C) and the thickness and mass increments per cycle for an experiment. The data points are compared with calculated values using minimum and extended mechanisms.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| T °C |average increment |\\n|---|---|\\n| 0 | 0.55 | \\n| 100 | 1.2 | \\n| 200 | 1.1 | \\n| 300 | 0.95 |\\n| 400 | 0.8 | \\n| 500 | 0.6 | \\n| 600 | 0.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The simple model does not cover the data points, but the range that the extended model does overlap with all the data points, so the extended model is required.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"175 degrees Celcius.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The maximum temperature that the reactor can achieve, or the stability of this temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":8,"y":0,"width":580,"height":467}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/Maxim Deminsky et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":589,"height":467,"image_format":"jpeg","image_sha256":"99720946e4bbea0fe5e4ebda25bcf7c1424747eaf14c677f1af2949a251d5822","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_29_fig6.jpg","caption":"Fig.6. the experimental growth rate in which deposition was carried out at $50^{\\circ}C$ substrate temperature using $3s$ water vapor pulse (Xie et al., 2007). (For interpretation of the references to colour in this figure legend, the reader is referred to the web version of the article.)","id":"train/atomic-layer-deposition/simulation-usecase/29/fig6","sample_id":"atomic-layer-deposition/simulation-usecase/29/fig6","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot illustrates the validation of a computational model for Atomic Layer Deposition (ALD) by comparing the calculated growth rates (nm/cycle) against pulse time (s) with experimental data (measured and interpolated). The coefficient of determination is 0.85.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulse Time (s) | Growth Rate (nm/cyc) | Data series |\\n|---|---|---|\\n| 0 | 0 | GR exp | \\n| 1 | 0.121 | GR exp | \\n| 2 | 0.121 | GR exp | \\n| 10 | 0.120 | GR exp |\\n| 0.0 | 0.001 | Gr exp (Interp) |\\n| 0.2 | 0.013 | Gr exp (Interp) |\\n| 0.4 | 0.033 | Gr exp (Interp) |\\n| 0.6 | 0.059 | Gr exp (Interp) |\\n| 0.8 | 0.079 | Gr exp (Interp) |\\n| 1.0 | 0.101 | Gr exp (Interp) |\\n| 1.2 | 0.108 | Gr exp (Interp) |\\n| 1.4 | 0.114 | Gr exp (Interp) |\\n| 1.6 | 0.119 | Gr exp (Interp) |\\n| 1.8 | 0.121 | Gr exp (Interp) |\\n| 2.0 | 0.120 | Gr exp (Interp) |\\n| 4.0 | 0.119 | Gr exp (Interp) |\\n| 6.0 | 0.120 | Gr exp (Interp) |\\n| 8.0 | 0.120 | Gr exp (Interp) |\\n| 10.0 | 0.120 | Gr exp (Interp) |\\n| 0.2 | 0.039 | Gr calc |\\n| 0.5 | 0.056 | Gr calc |\\n| 0.6 | 0.066 | Gr calc |\\n| 0.8 | 0.075 | Gr calc |\\n| 1.0 | 0.081 | Gr calc |\\n| 1.2 | 0.089 | Gr calc |\\n| 1.4 | 0.095 | Gr calc |\\n| 1.6 | 0.099 | Gr calc |\\n| 1.8 | 0.104 | Gr calc |\\n| 2.0 | 0.109 | Gr calc |\\n| 4.0 | 0.128 | Gr calc |\\n| 6.0 | 0.135 | Gr calc |\\n| 8.0 | 0.138 | Gr calc |\\n| 10.0 | 0.139 | Gr calc |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The transition occurs between the 2-second and 4-second pulse times. The theoretical model underestimates the growth rate at 2 s. By the 4 s mark, the model surpasses the experimental data.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The experimental data reaches saturation faster than the theoretical model .\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The experimental data more closely resembles an ideal ALD process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The theoretical model predicts that the substrate requires a pulse time of approximately 4 to 6 seconds to reach full saturation, whereas the experimental data demonstrates that saturation is actually achieved in just 1 second. Consequently, an engineer relying solely on the model would likely program the reactor to dose the precursor for longer than necessary to ensure full coverage. This discrepancy leads to waste because the excess precursor introduced after the 1-second mark cannot react with the already saturated surface and is simply purged from the system.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":6,"width":967,"height":562}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":969,"height":572,"image_format":"jpeg","image_sha256":"9a55ee32710a35fbcbc30149a01ef7a4839d35a9ec283fb87f62a6fef91b36a9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_29_fig7.jpg","caption":"Fig.7. t t t references to colour in this figure legend, the reader is referred to the web version of this article.)","id":"train/atomic-layer-deposition/simulation-usecase/29/fig7","sample_id":"atomic-layer-deposition/simulation-usecase/29/fig7","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot illustrates the validation of a computational model for Atomic Layer Deposition (ALD) with TDEAT by comparing the calculated growth rates (nm/cycle) against pulse time (s) with experimental data (measured and interpolated). The coefficient of determination is 0.99, which indicates a strong correlation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulse Time (s) | Growth Rate (nm/cyc) | Data series |\\n| --- | --- | --- |\\n| 0,0 | 0,000 | Gr exp |\\n| 1,0 | 0,023 | Gr exp |\\n| 2,0 | 0,040 | Gr exp |\\n| 4,0 | 0,040 | Gr exp |\\n| 0,0 | 0,000 | Gr exp (interpolated) |\\n| 0,4 | 0,010 | Gr exp (interpolated) |\\n| 0,8 | 0,020 | Gr exp (interpolated) |\\n| 1,0 | 0,023 | Gr exp (interpolated) |\\n| 1,4 | 0,027 | Gr exp (interpolated) |\\n| 1,8 | 0,032 | Gr exp (interpolated) |\\n| 2,0 | 0,033 | Gr exp (interpolated) |\\n| 2,4 | 0,035 | Gr exp (interpolated) |\\n| 2,8 | 0,038 | Gr exp (interpolated) |\\n| 3,0 | 0,038 | Gr exp (interpolated) |\\n| 3,4 | 0,039 | Gr exp (interpolated) |\\n| 3,8 | 0,040 | Gr exp (interpolated) |\\n| 4,0 | 0,040 | Gr exp (interpolated) |\\n| 0,4 | 0,014 | Gr calc |\\n| 0,8 | 0,020 | Gr calc |\\n| 1,0 | 0,023 | Gr calc |\\n| 1,4 | 0,028 | Gr calc |\\n| 1,8 | 0,030 | Gr calc |\\n| 2,0 | 0,032 | Gr calc |\\n| 2,4 | 0,034 | Gr calc |\\n| 2,8 | 0,036 | Gr calc |\\n| 3,0 | 0,037 | Gr calc |\\n| 3,4 | 0,039 | Gr calc |\\n| 3,8 | 0,041 | Gr calc |\\n| 4,0 | 0,041 | Gr calc |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The graph displays an R² value of 0.99. It implies an excellent statistical fit. This value means that the theoretical model explains 99% of the variance in the experimental data and predicts the growth rate with very high accuracy .\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The data point at 2 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. At 0.5 seconds, the growth rate is only about ~0.01 nm/cycle. It is below the saturation level of ~0.04 nm/cyc. This indicates the surface is not fully covered, which would lead to poor film quality.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 2s.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":961,"height":607}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":967,"height":619,"image_format":"jpeg","image_sha256":"3f2bebfc418df234be12141438719f3801436ac8c6f06f24201945d1ff1fdecc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_29_fig8.jpg","caption":"Fig.8. of the references to colour in this figure legend, the reader is referred to the web version of this article.)","id":"train/atomic-layer-deposition/simulation-usecase/29/fig8","sample_id":"atomic-layer-deposition/simulation-usecase/29/fig8","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot illustrates the validation of a computational model for Atomic Layer Deposition (ALD) with TDEAH by comparing the calculated growth rates (nm/cycle) against pulse time (s) with experimental data. The coefficient of determination is 0.93, which indicates a strong correlation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulse Time (s) | Growth Rate (nm/cyc) | Data series |\\n| --- | --- | --- |\\n| 0,0 | 0,000 | Gr exp |\\n| 1,0 | 0,039 | Gr exp |\\n| 2,0 | 0,088 | Gr exp |\\n| 3,0 | 0,115 | Gr exp |\\n| 4,0 | 0,121 | Gr exp |\\n| 5,9 | 0,133 | Gr exp |\\n| 8,0 | 0,145 | Gr exp |\\n| 12,0 | 0,141 | Gr exp |\\n| 1,0 | 0,064 | Gr calc |\\n| 2,0 | 0,079 | Gr calc |\\n| 3,0 | 0,094 | Gr calc |\\n| 4,0 | 0,109 | Gr calc |\\n| 6,0 | 0,125 | Gr calc |\\n| 8,0 | 0,134 | Gr calc |\\n| 12,0 | 0,150 | Gr calc |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It generally underestimates the experimental values, except for the first and the last data points.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After ~ 8s.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. While the experimental data shows the growth rate reaching a saturation between 8 and 12 seconds, the model predicts a continued increase in growth rate during that same interval. This discrepancy leads the model to overestimate the growth rate at 12 seconds, failing to replicate the self-limiting behavior of an ALD process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 1 and 2 seconds and between 8 and 12 seconds.\"}]}]","bbox":[{"panel_id":"a","x":7,"y":9,"width":964,"height":616}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":970,"height":625,"image_format":"jpeg","image_sha256":"3b1c161d5fc6f87a23dfa3250a2782dadee07cb5d851777bb22e78a53186ba93","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_29_fig9.jpg","caption":"Fig.9. t t references to colour in this figure legend, the reader is referred to the web version of this article.)","id":"train/atomic-layer-deposition/simulation-usecase/29/fig9","sample_id":"atomic-layer-deposition/simulation-usecase/29/fig9","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot illustrates the validation of a computational model for Atomic Layer Deposition (ALD) with TEMAH by comparing the calculated growth rates (nm/cycle) against pulse time (s) with experimental data. The coefficient of determination is 0.93, which indicates a strong correlation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulse time (s) | Growth Rate (nm/cyc) | Data series |\\n|---|---|---|\\n| 0,0 | 0,000 | Gr exp |\\n| 0,2 | 0,030 | Gr exp |\\n| 0,5 | 0,066 | Gr exp |\\n| 0,8 | 0,070 | Gr exp |\\n| 1,2 | 0,071 | Gr exp |\\n| 1,6 | 0,072 | Gr exp |\\n| 2,0 | 0,072 | Gr exp |\\n| 3,0 | 0,074 | Gr exp |\\n| 4,0 | 0,074 | Gr exp |\\n| 0,2 | 0,044 | Gr calc |\\n| 0,5 | 0,054 | Gr calc |\\n| 0,8 | 0,061 | Gr calc |\\n| 1,2 | 0,067 | Gr calc |\\n| 1,6 | 0,069 | Gr calc |\\n| 2,0 | 0,071 | Gr calc |\\n| 3,0 | 0,073 | Gr calc |\\n| 4,0 | 0,075 | Gr calc |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The experimental process reaches saturation faster.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The beginning of the curve contributes the most.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After ~ 1s.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It would have no effect on the film thickness. The experimental data shows a saturation plateau; this confirms the process is self-limiting. Once the surface is saturated (which happens before 2 seconds), adding extra precursor due to an accidental fluctuation does not result in extra growth.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":4,"width":967,"height":624}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":967,"height":630,"image_format":"jpeg","image_sha256":"365098327a8e02c7c22cdcb80fb0ddbdf8e18871912a8d685bb4db4555db1f5f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_16.jpg","caption":"Fig. 16 - Time evolution of the maximum reactant mole fraction inside the reactor chamber.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_16","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_16","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart plot the maximum reactant mole fraction as a function of time for TMA and water.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Water Mole Fraction | TMA Mole Fraction |\\n|----------|----------------------|--------------------|\\n| 0.0 | 1.00 | 1.00 |\\n| 0.1 | 0.70 | 0.30 |\\n| 0.2 | 0.40 | 0.20 |\\n| 0.3 | 0.25 | 0.15 |\\n| 0.5 | 0.10 | 0.05 |\\n| 1.0 | 0.02 | 0.02 |\\n| 2.0 | 0.00 | 0.01 |\\n| 5.0 | 0.00 | 0.01 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In order to study the purging efficiency of the reactor, the maximum reactant mole fraction inside the whole chamber was traced during the ALD pulses and purging steps of the ALD cycle, for both reactants.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The maximum mole fraction inside the chamber during the first stages of the exposure time is close to 1, as the computed reactant pulses have a high reactant composition. After the reactant pulses, the maximum mole fraction quickly drops, as the reactor purging step begins.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The results are obtained bysimulating only the transport of chemical species inside thereactor. In order to get a more reliable value for the purging time, chemical reaction kinetics and adsorption/desorption ofspecies on the reactor walls must be taken into account\"}]}]","bbox":[{"panel_id":"a","x":2,"y":1,"width":1008,"height":517}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_16.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1014,"height":525,"image_format":"jpeg","image_sha256":"22f11d17f703bcaedbd84692e28bee36647d115f978110b3465bf935974090f1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_8.jpg","caption":"Fig. 8 - Feeding system model results for the TMA and $\\mathbf{H}_2\\mathbf{O}$ reactant pulses: a) flow rate, b) molar fraction averaged at the feeding system outlet.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_8","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_8","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the results from feeding system model of the flow rate of TMA and water over time, with both decreasing rapidly.\"},{\"panel_id\":\"b\",\"text\":\"The line chart displays the averaged molar fraction of TMA and water over time for feeding system outlet, with both fractions decreasing.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Flow Rate - Water (sccm) | Flow Rate - TMA (sccm) |\\n|----------|---------------------------|-------------------------|\\n| 0.00 | 700 | 450 |\\n| 0.02 | 500 | 300 |\\n| 0.05 | 200 | 100 |\\n| 0.10 | 50 | 20 |\\n| 0.15 | - | - |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | Molar Fraction - Water | Molar Fraction - TMA |\\n|----------|-------------------------|-----------------------|\\n| 0.00 | 0.95 | 0.90 |\\n| 0.02 | 0.80 | 0.60 |\\n| 0.05 | 0.40 | 0.20 |\\n| 0.10 | 0.10 | 0.05 |\\n| 0.15 | 0.06 |0.05 |\\n| 0.2 | 0.03 |0.02 |\\n| 0.25 | 0 | 0 |\\n| 0.3 | 0 |0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The calculated TMA and H2O pulses as a function of time, in terms of flow rate and averaged molar fraction at the feeding system outlet are shown in images a and b respectively\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A higher flow rate for H2O than for TMA for the whole duration of the pulse, leading to an overall higher quantity of the delivered H2O. This is attributed to the higher vapor pressure of H2O inside the reactant bottles and to the longer opening time of the ALD valve above the H2O bottle(60 ms and 25 ms for H2O and TMA, respectively).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reactant molar fraction is substantial during both pulses, whereas Ar represents only roughly10 wt% of the gas mixture. Notably, it is predicted that although the H2O valve opening time is longer and the quantity of H2O entering the feeding system is higher, the TMA molecules evacuate the feeding system slower, i.e the feeding system takes more time to purge. This is attributed to the slower diffusion rate in N2of TMA compared to H2O, since the molecules of the former are bigger and heavier than the latter\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. The feeding system is purged from both reactants in 0.3 s. \\n2. The total calculated amounts entering the reactor are 0.63 mg for TMA and 0.408 mg for H2O.\\n3. The flow rate of the feeding system after the reactant pulses are 30 sccm\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":508,"height":403},{"panel_id":"b","x":514,"y":7,"width":492,"height":391}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1012,"height":458,"image_format":"jpeg","image_sha256":"6da731400c5af3cad2d32f6f968de9da5cbd8276c8e8f7dcf71fa684b775617a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_9.jpg","caption":"Fig. 9 - Outlet pressure variation vs time: model predictions vs Pirani gauge measurements.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_9","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_9","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart compares the outlet pressure over time for experimental data and a model.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s) | Outlet Pressure - Experiments (Torr) | Outlet Pressure - Model (Torr) |\\n|----------|---------------------------------------|---------------------------------|\\n| 0 | 0.049 | 0.049 |\\n| 5 | 0.075 (H₂O peak) | 0.074 |\\n| 10 | 0.058 (TMA peak) | 0.057 |\\n| 15 | 0.075 (H₂O peak) | 0.074 |\\n| 20 | 0.049 | 0.049 |\\n| 25 | 0.075 (H₂O peak) | 0.074 |\\n| 30 | 0.058 (TMA peak) | 0.057 |\\n| 35 | 0.075 (H₂O peak) | 0.074 |\\n| 40 | 0.049 | 0.049 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The predicted outlet pressure with the Pirani conversion(Pconv) variation during three ALD cycles shown in the figure is compared with the experimental measurements.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In particular, the outlet peak heights are captured and thus the dynamic response to the reactant pulses. This validates the coupling of the two CFD models\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the pressure reading given by the Pirani gauge is gas dependent, it will vary with the gas composition. The pressure reading is performed via the measurement of the gas thermal conductivity, which is inversely proportional to the molecular mass of the gas. As the gauge is calibrated for nitrogen, a gas with a higher molecular mass than N2(28 g/mol) will lead to a lower pressure reading, while a gas with a lower molecular mass will have the opposite effect\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1184,"height":594}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1181,"height":598,"image_format":"jpeg","image_sha256":"66f20de20a119a045a9c2ef9d3cff2ee604e1e811b7b4489c7b0260709a2bc1a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_35_fig_2.jpg","caption":"Fig. 2. Effect of substrate heat-treatment temperature on the amount of aluminum adsorbed $\\Delta c_{\\mathrm{Al}}$ in the $\\mathrm{AlMe}_3$ reaction (a) with alumina (reaction at $150^{\\circ}\\mathrm{C}$ : $(\\Delta \\Omega)$ [21]) and (b) with silica (reaction at $150^{\\circ}\\mathrm{C}$ : $(\\bigcirc)$ [20], reaction at $250^{\\circ}\\mathrm{C}$ : $(\\square)$ [19]). Lines have been fitted to the experimental data; the confidence limits represent one standard deviation. Surface OH group concentrations $c_{(\\mathrm{O})\\mathrm{H}}(\\times , + )$ are shown for reference [20-22].","id":"train/atomic-layer-deposition/simulation-usecase/35/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/35/fig_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the effect of alumina heat-treatment temperature on both the aluminum adsorbed per cycle (Δc_Al, triangles) and the surface OH group concentration (c_(O)H, X markers). Both quantities decrease with increasing pretreatment temperature (200–800°C). The linear fit to Δc_Al yields a = 5.9 ± 0.2 nm⁻² and b = −0.0050 ± 0.0003, indicating that higher pretreatment temperatures reduce aluminum uptake.\"},{\"panel_id\":\"b\",\"text\":\"The scatter plot shows analogous data for silica substrates, with Δc_Al measured at two reaction temperatures (150°C: circles; 250°C: squares) and c_(O)H shown as + markers. The fit gives a = 4.7 ± 0.3 nm⁻² and b = −0.0033 ± 0.0005. Both Δc_Al and c_(O)H decrease with heat-treatment temperature, with c_(O)H declining more steeply at higher temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Alumina heat-treatment[°C] | ΔCAl(OH)[nm-2] |\\n|---|---|\\n| 200 | 6 |\\n| 400 | 5 |\\n| 600 | 4 |\\n| 800 | 2 |\"},{\"panel_id\":\"b\",\"text\":\"| Silica heat-treatment[°C] | ΔCSi(OH)[nm-2] |\\n|---|---|\\n| 200 | 7 |\\n| 400 | 6 |\\n| 600 | 5 |\\n| 800 | 3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both Δc_Al and c_(O)H decrease with increasing heat-treatment temperature on both alumina and silica substrates. However, c_(O)H decreases more rapidly than Δc_Al, particularly at higher temperatures. At elevated pretreatment temperatures, c_(O)H can even fall below Δc_Al, indicating that the simple model where each OH group binds one aluminum atom cannot fully explain the observed growth. This divergence suggests that AlMe₃ can also adsorb through mechanisms other than ligand exchange with OH groups, such as dissociation on oxygen bridges.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher heat-treatment temperatures cause dehydroxylation, where pairs of surface OH groups combine to form oxygen bridges and release water, thereby reducing the concentration of reactive OH sites available for AlMe₃ chemisorption.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Circles represent Δc_Al measured at 150°C reaction temperature, squares represent Δc_Al at 250°C reaction temperature, and + markers represent the surface OH group concentration c_(O)H.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Alumina shows higher initial aluminum uptake, with a fitted intercept of a = 5.9 ± 0.2 nm⁻² compared to a = 4.7 ± 0.3 nm⁻² for silica. This difference correlates with the higher initial OH group concentration on alumina surfaces. Additionally, alumina and silica have different surface chemistries and OH group types (isolated, bridged, hydrogen-bonded), which affect their reactivity toward AlMe₃. The steeper slope for alumina (b = −0.0050) versus silica (b = −0.0033) also indicates that alumina's aluminum uptake is more sensitive to dehydroxylation.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":288,"height":230},{"panel_id":"b","x":307,"y":0,"width":271,"height":230}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/Riikka L. Puurunen.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":578,"height":230,"image_format":"jpeg","image_sha256":"5bff4bb9b7d6d4e56d7930d4b5e5c8c76d9957b202c8844161287e66c2d943ef","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_35_fig_3.jpg","caption":"Fig. 3. Effect of the OH group surface concentration $c_{(\\mathrm{O})\\mathrm{H}}$ on the reaction of $\\mathrm{AlMe}_3$ : (a) aluminum atoms adsorbed, $\\Delta c_{\\mathrm{Al}}$ , (b) methyl groups adsorbed, $\\Delta c_{\\mathrm{Me}}$ , and (c) the average $\\mathrm{Me / Al}$ ratio in the adsorbed species $(\\Delta c_{\\mathrm{Me}} / \\Delta c_{\\mathrm{Al}})$ (data for $\\Delta c_{\\mathrm{Al}}$ and $c_{(\\mathrm{O})\\mathrm{H}}$ from Figs. 1 and 2; data for $\\Delta c_{\\mathrm{Me}}$ from references [19-21]). In panels (a) and (b), solid lines show fits to the experimental data; the confidence limits represent 1 standard deviation. The dashed line in panels (a-c) show the results expected for the chemistry of Eq. (6) (with $\\Delta c_{\\mathrm{Me}}^{\\mathrm{max}} = 6.0 \\mathrm{nm}^{-2}$ ).","id":"train/atomic-layer-deposition/simulation-usecase/35/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/35/fig_3","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows Δc_Al (aluminum adsorbed per cycle) versus surface OH concentration c_(O)H, combining data from alumina (triangles, 80–300°C) and silica (circles 150°C, squares 250°C). The solid line is a linear fit yielding a = 1.68 ± 0.09 nm⁻² and b = 0.37 ± 0.02. The dashed line represents the theoretical prediction assuming one OH binds one Al atom (Eq. 6), which clearly fails to describe the data.\"},{\"panel_id\":\"b\",\"text\":\"The scatter plot shows Δc_Me (methyl groups adsorbed) versus c_(O)H. The solid fit gives a = 4.9 ± 0.2 nm⁻² and b = 0.14 ± 0.06, indicating Δc_Me is nearly constant (~5 nm⁻²) regardless of OH concentration. The dashed theoretical line again fails to match observations.\"},{\"panel_id\":\"c\",\"text\":\"The scatter plot shows the average Me/Al ratio (Δc_Me/Δc_Al) versus c_(O)H. The ratio decreases from ~3 at low c_(O)H toward ~2 at high c_(O)H. The solid curve fits the experimental trend while the dashed line shows the inadequate theoretical prediction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| c_(O)H, nm⁻² | Δc_Al 80-300°C alumina (nm⁻²) | Δc_Al 150°C silica (nm⁻²) | Δc_Al 250°C silica (nm⁻²) |\\n|---|---|---|---|\\n| 1 | 2.1 | - | - |\\n| 2 | 2.4 | 2.9 | - |\\n| 3 | 2.8 | - | 2.7 |\\n| 4 | 3.2 | - | 3.0 |\\n| 5 | 3.5 | - | - |\\n| 6 | 3.9 | - | - |\\n| 8 | 4.6 | - | - |\\n| 9 | 5.0 | - | - |\"},{\"panel_id\":\"b\",\"text\":\"| c_(O)H, nm⁻² | Δc_Me 80-300°C alumina (nm⁻²) | Δc_Me 150°C silica (nm⁻²) | Δc_Me 250°C silica (nm⁻²) |\\n|---|---|---|---|\\n| 1 | 5.0 | 5.2 | - |\\n| 2 | 5.2 | - | - |\\n| 3 | 5.5 | - | 5.7 |\\n| 4 | 5.6 | - | 5.5 |\\n| 5 | 5.8 | - | - |\\n| 6 | 5.9 | - | - |\\n| 8 | 6.0 | - | - |\\n| 9 | 6.1 | - | - |\"},{\"panel_id\":\"c\",\"text\":\"| c_(O)H, nm⁻² | Δc_Me/Δc_Al 80-300°C alumina | Δc_Me/Δc_Al 150°C silica | Δc_Me/Δc_Al 250°C silica |\\n|---|---|---|---|\\n| 1 | 2.4 | 1.8 | - |\\n| 2 | 2.2 | - | - |\\n| 3 | 2.0 | - | 2.1 |\\n| 4 | 1.8 | - | 1.9 |\\n| 5 | 1.7 | - | - |\\n| 6 | 1.5 | - | - |\\n| 8 | 1.4 | - | - |\\n| 9 | 1.3 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The intercept represents the amount of aluminum that would adsorb on an oxide surface with zero OH groups. Since AlMe₃ retains all three methyl ligands when no OH groups are present (Me/Al = 3), this aluminum must chemisorb through dissociation or association reactions with oxygen bridges rather than ligand exchange. Multiplying a by 3 gives ~5.0 nm⁻², which matches the observed Δc_Me at low OH concentrations, confirming internal consistency of the model.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dashed lines represent predictions from a simplified model (Eq. 6) assuming each OH group binds exactly one aluminum atom via ligand exchange. The systematic deviation from experimental data proves this simple one-to-one correspondence is invalid for the AlMe₃/H₂O ALD process.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At low c_(O)H, AlMe₃ adsorbs primarily through dissociation or association on oxygen bridges, retaining all three methyl groups (Me/Al ≈ 3). As c_(O)H increases, more aluminum atoms attach via ligand exchange reactions that release methyl groups as methane. Each OH group that reacts removes one methyl ligand, so the average number of methyl groups per adsorbed aluminum decreases. At high OH concentrations, the Me/Al ratio approaches 2, indicating that on average one methyl is released per adsorbed aluminum.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 5 to 6 methyl groups per nm² are adsorbed at saturation. This value is nearly constant because steric hindrance by the bulky methyl groups, not OH availability, determines the saturation coverage.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":3,"width":732,"height":256},{"panel_id":"b","x":0,"y":288,"width":329,"height":243},{"panel_id":"c","x":356,"y":288,"width":323,"height":243}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/Riikka L. Puurunen.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":736,"height":531,"image_format":"jpeg","image_sha256":"cfdc893c77c72be02aeeb6360df8247ce66228f04cb0809238c915b7b0159fa9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_36_figure_2.jpg","caption":"Figure 2. (a) WCA values as a function of ALD $\\mathrm{Al}_2\\mathrm{O}_3$ cycles with a general recipe at $150^{\\circ}\\mathrm{C}$ for four different substrates: ODPA/Ti, Ti, $\\mathrm{SiO}_2$ , and HF-treated Si. The insets show WCA images captured using a three-times-magnified optical lens in a WCA analyzer. (b) Al 2p XPS spectra of $\\mathrm{Al}_2\\mathrm{O}_3$ on ODPA/Ti for 50, 70, and 100 ALD cycles.","id":"train/atomic-layer-deposition/simulation-usecase/36/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/36/figure_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The WCA plot shows distinct initial contact angles for the four substrates, followed by progressive convergence with increasing ALD cycles. ODPA/Ti maintains a high angle through early cycles before dropping sharply between 100 and 150 cycles. HF-treated Si reaches its final angle by ~25 cycles, while SiO₂ and Ti follow nearly identical trajectories after that point. By 150 cycles, all surfaces converge near ~45°.\"},{\"panel_id\":\"b\",\"text\":\"The Al 2p spectra display a common peak centered near ~75 eV for all cycle counts. Peak intensity increases monotonically from 50 to 100 cycles, while peak position and width remain essentially unchanged. The spectra therefore differ primarily in amplitude rather than energy shift.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycles | ODPA/Ti (deg) | HF-treated Si (deg) | SiO₂ (deg) | Ti (deg) |\\n|-----------|----------------|----------------------|------------|----------|\\n| 0 | ~110 | ~90 | ~70 | ~60 |\\n| 25 | ~110 | ~45 | ~45 | ~45 |\\n| 50 | ~105 | ~45 | ~45 | ~45 |\\n| 100 | ~90 | ~45 | ~45 | ~45 |\\n| 150 | ~45 | ~45 | ~45 | ~45 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding energy (eV) | Relative intensity trend |\\n|---------------------|--------------------------|\\n| ~73.0 | Very low |\\n| ~74.0 | Rising |\\n| ~75.0 | Maximum (100 > 70 > 50) |\\n| ~76.0 | Decreasing |\\n| ~77.0 | Very low |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Each substrate begins with a distinct contact-angle value, but the curves progressively collapse toward a common range as ALD cycles increase. ODPA/Ti remains hydrophobic through early cycles before declining sharply, whereas HF-treated Si reaches its final angle quickly and remains constant. SiO₂ and Ti show nearly identical behavior after the initial cycles. Overall, increasing ALD cycles reduce substrate-dependent differences.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ODPA/Ti.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-All spectra peak near ~75 eV.\\n, -Peak intensity increases from 50 to 100 cycles.\\n, -Peak widths and positions remain nearly unchanged.\\n, -Differences are dominated by amplitude, not energy shift.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The stable peak position indicates that the chemical state of aluminum remains consistent as the film grows. Increasing cycle count primarily increases signal intensity rather than altering bonding environment. This suggests uniform film growth rather than a change in aluminum coordination or oxidation state.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":510,"height":384},{"panel_id":"b","x":1,"y":414,"width":506,"height":396}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/Seunggi Seo et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":513,"height":812,"image_format":"jpeg","image_sha256":"1bb47c8d3abdf4ff2623aa6afade85251904a9d172bc8f79b91971b29efb0d38","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_36_figure_5.jpg","caption":"Figure 5. WCA values as a function of the number of ALD $\\mathrm{Al}_2\\mathrm{O}_3$ cycles for up to 150 cycles (a) using an ALD process with decreased TMA pressure (from 8.9 to 1.3 Torr) and (b) using a decreased TMA pressure process with increased Ar purging (TMA injection pressure decreased from 8.9 to 1.3 Torr) and no purging pressure increased from 1.3 to 8.9 Torr) over 370 cycles at $150^{\\circ}\\mathrm{C}$ for three different substrates, ODPA/Ti, Ti, and $\\mathrm{SiO}_2$ and HF-treated Si. The insets show WCA images captured using a $3\\times$ magnified optical lens in a WCA analyzer.","id":"train/atomic-layer-deposition/simulation-usecase/36/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/36/figure_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Under reduced TMA pressure, HF-treated Si, SiO₂, and Ti exhibit a rapid decrease in WCA to ~45° within the first 25 ALD cycles, after which their values remain constant. ODPA/Ti behaves differently, maintaining a high contact angle (~110°) through early cycles and decreasing gradually to ~90° by 150 cycles.\"},{\"panel_id\":\"b\",\"text\":\"With reduced TMA pressure and increased Ar purge, the same three substrates again converge rapidly to ~45° and remain stable over the entire 370-cycle range. ODPA/Ti shows only a slight decrease from ~110° to ~105°, indicating strong resistance to long-term hydrophilization under these conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD cycles | ODPA/Ti (deg) | HF-treated Si (deg) | SiO₂ (deg) | Ti (deg) |\\n|-----------|----------------|----------------------|------------|----------|\\n| 0 | ~110 | ~90 | ~70 | ~60 |\\n| 25 | ~110 | ~45 | ~45 | ~45 |\\n| 50 | ~110 | ~45 | ~45 | ~45 |\\n| 100 | ~105 | ~45 | ~45 | ~45 |\\n| 150 | ~90 | ~45 | ~45 | ~45 |\"},{\"panel_id\":\"b\",\"text\":\"| ALD cycles | ODPA/Ti (deg) | HF-treated Si (deg) | SiO₂ (deg) | Ti (deg) |\\n|-----------|----------------|----------------------|------------|----------|\\n| 0 | ~110 | ~90 | ~70 | ~60 |\\n| 25 | ~110 | ~45 | ~45 | ~45 |\\n| 150 | ~105 | ~45 | ~45 | ~45 |\\n| 370 | ~105 | ~45 | ~45 | ~45 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-HF-treated Si stabilizes near ~45°.\\n-SiO₂ and Ti follow nearly identical trajectories to ~45°.\\n-ODPA/Ti remains significantly higher than the others.\\n-The separation between ODPA/Ti and the remaining substrates persists over subsequent cycles.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A fast, stable WCA response reduces uncertainty in downstream wet processing, adhesion, or interfacial layer formation. If most substrates quickly reach a consistent wetting state, process tuning becomes simpler. The persistent exception (ODPA/Ti) also highlights where selectivity might be achievable.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The curves indicate those substrates still transition rapidly to ~45° and then remain stable, even with the modified purge scheme. That suggests the early surface change is robust to this process adjustment once the low-WCA state is reached. The main visible effect is that the long-cycle behavior remains steady rather than drifting.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ODPA/Ti.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":512,"height":381},{"panel_id":"b","x":1,"y":406,"width":515,"height":390}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/Seunggi Seo et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":517,"height":795,"image_format":"jpeg","image_sha256":"34d3c30b795ac4426ceaa0d6ee9125349f3b8a942c82466eec07079ab9660ecc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_42_fig_6.jpg","caption":"Fig. 6 (a) $t_{\\mathrm{phy}} - t_{\\mathrm{ox}}$ plot, (b) $J - V$ plot, and (c) $J - t_{\\mathrm{ox}}$ plot of the MIM capacitor with $20 \\mathrm{nm}$ -thick $\\mathrm{TiO_2}$ deposited by (black) the conventional sequence and (red) the $\\mathrm{H}_2\\mathrm{O}$ -added sequence with a $\\mathrm{H}_2\\mathrm{O}$ feeding time of $10 \\mathrm{s}$ .","id":"train/atomic-layer-deposition/simulation-usecase/42/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/42/fig_6","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A line chart showing the relationship between t_{hyb} [nm] and l_{0} [µm], comparing the effect of the conventional vs. the H2O-added sequence.\"},{\"panel_id\":\"b\",\"text\":\"A scatter plot displaying leakage current density against applied voltage, comparing the effect of the conventional vs. the H2O-added sequence.\"},{\"panel_id\":\"c\",\"text\":\"A scatter plot showing leakage current density at -0.8 V against t_{hyb} [nm], comparing the effect of the conventional vs. the H2O-added sequence.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| t_{hyb} [nm] | l_{0} [µm] Conventional | l_{0} [µm] H2O-added |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 5 | 0.2 | 0.2 |\\n| 10 | 0.4 | 0.4 |\\n| 15 | 0.6 | 0.6 |\\n| 20 | 0.8 | 0.8 |\\n| 25 | 1 | 1 |\"},{\"panel_id\":\"b\",\"text\":\"| Applied Voltage [V] | Leakage current density [A/cm^{2}] Conventional | Leakage current density [A/cm^{2}] H2O-added |\\n|---|---|---|\\n|-1.5 | 10^{-6} | 10^{-7} |\\n|-1.0 | 10^{-7} | 10^{-8} |\\n|-0.5 | 10^{-8} | 10^{-8} |\\n| 0.0 | 10^{-9} | 10^{-8} |\\n| 0.5 | 10^{-6} | 10^{-6} |\\n| 1.0 | 10^{-4} | 10^{-4} |\\n| 1.5 | 10^{-3} | 10^{-3} |\"},{\"panel_id\":\"c\",\"text\":\"| t_{hyb} [nm] | Leakage current density @ -0.8 V [A/cm^{2}] |\\n|---|---|\\n| 0.2 | 10^{-7} |\\n| 0.4 | 10^{-6} |\\n| 0.6 | 10^{-5} |\\n| 0.8 | 10^{-4} |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"93.5.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"97.8.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The y-intercept reflects the interfacial properties between the TiO₂ film and the top/bottom electrodes, implying that the additional H2O step does not induce any change at the interface of the TE or the BE.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both the J–V curves and leakage current trends show that the TiO₂ films produced by the conventional and H₂O-enhanced processes behave nearly identically, indicating that their bulk electrical and interfacial properties are the same. The similar dielectric constants, unchanged y-intercepts, and overlapping leakage current behavior suggest that adding an H₂O feeding step does not negatively impact film quality or electrode interfaces, and that both films exhibit comparable crystallinity consistent with the rutile TiO₂ phase.\"}]}]","bbox":[{"panel_id":"a","x":7,"y":12,"width":199,"height":189},{"panel_id":"b","x":227,"y":6,"width":215,"height":195},{"panel_id":"c","x":453,"y":11,"width":207,"height":189}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/Yeonchoo Cho et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":661,"height":200,"image_format":"jpeg","image_sha256":"20de0fccead6229318554edc62eb7449917deffa1a07866c162814606cf28ae8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_5_9e00b88115926e47232a0241f1247464af11d2b941b12f93e9ea7d022654029e.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/5/9e00b88115926e47232a0241f1247464af11d2b941b12f93e9ea7d022654029e","sample_id":"atomic-layer-deposition/simulation-usecase/5/9e00b88115926e47232a0241f1247464af11d2b941b12f93e9ea7d022654029e","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the thickness of ZnO as a function of ALD cycles at different temperatures over silicon and amorphous silicon substrates.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the selectivity of a process as a function of ALD cycles at two different temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD Cycles | 100°C on SiO₂ (nm) | 250°C on SiO₂ (nm) | 100°C on a-Si:H (nm) | 250°C on a-Si:H (nm) |\\n|------------|----------------------|----------------------|------------------------|------------------------|\\n| 0 | 0.0 | 0.0 | 0.0 | 0.0 |\\n| 20 | 2.0 | 3.0 | 0.0 | 0.0 |\\n| 40 | 4.0 | 6.0 | 0.0 | 0.0 |\\n| 60 | 6.0 | 9.0 | 0.0 | 0.0 |\\n| 80 | 8.0 | 12.0 | 0.5 | 0.0 |\\n| 100 | 10.0 | — | 1.5 | 0.2 |\\n| 120 | — | — | 3.0 | 0.5 |\\n| 160 | — | — | 6.0 | 1.0 |\\n| 200 | — | — | 8.0 | 2.0 |\"},{\"panel_id\":\"b\",\"text\":\"| ALD Cycles | Selectivity @ 100°C | Selectivity @ 250°C |\\n|------------|----------------------|----------------------|\\n| 0 | 1.00 | 1.00 |\\n| 40 | 0.95 | 1.00 |\\n| 80 | 0.85 | 1.00 |\\n| 120 | 0.65 | 0.95 |\\n| 160 | 0.45 | 0.85 |\\n| 200 | 0.30 | 0.75 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For a deposition temperature of 100 °C, the selectivity decreases from 1.0 to 0.96 at 80 ALD cycles. By further increasing the number of cycles, the selectivity drops to 0.85 (at 100 cycles), which corresponds to a ZnO thickness of ∼1 nm on the NGA. For a deposition temperature of 250 °C, the selectivity, S, remains 1 until 110 cycles and then decreases to 0.95 at 140 ALD cycles.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The selectivity is abruptly lost at 350 °C.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A larger nucleation delay is observed for deposition at 250 °C with a-Si:H substrate\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":14,"y":0,"width":497,"height":375},{"panel_id":"b","x":8,"y":393,"width":505,"height":413}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/9e00b88115926e47232a0241f1247464af11d2b941b12f93e9ea7d022654029e.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/9e00b88115926e47232a0241f1247464af11d2b941b12f93e9ea7d022654029e.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"not_found"},"width":511,"height":809,"image_format":"jpeg","image_sha256":"870798f14a2da06899d656a16d3ec6fa9f9b1117bea4b5df3f620b8f1a2228ef","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_5_figure_2.jpg","caption":"Figure 2. $\\mathrm{ZnO}$ film thickness measured by in situ SE as a function of the number of ALD cycles performed on substrates with a native $\\mathrm{SiO}_2$ surface (closed squares) and with a $\\sim 10 \\mathrm{nm}$ thick a-Si/H layer (open squares). On $\\mathrm{SiO}_2$ , the $\\mathrm{ZnO}$ film thickness increases linearly after a short delay of a few cycles, whereas on a-Si/H, the $\\mathrm{ZnO}$ deposition experiences a relatively long nucleation delay. Only after 80 ALD cycles, the growth also starts on the a-Si/H and enters a linear regime at about 120 cycles. Both depositions were carried out at $100^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/simulation-usecase/5/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/5/figure_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the thickness of ZnO deposited on SiO2 (closed squared) and a-Si:H (open squares) substrates as a function of ALD cycles. The thickness increases linearly with increasing cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD Cycles | ZnO Thickness on SiO₂ (nm) | ZnO Thickness on a-Si:H (nm) |\\n|------------|-----------------------------|--------------------------------|\\n| 0 | 0.0 | 0.0 |\\n| 10 | 2.0 | 0.0 |\\n| 20 | 4.0 | 0.0 |\\n| 30 | 6.0 | 0.0 |\\n| 40 | 8.0 | 0.2 |\\n| 50 | 10.0 | 0.5 |\\n| 60 | 12.0 | 1.0 |\\n| 70 | 14.0 | 2.0 |\\n| 80 | 16.0 | 3.0 |\\n| 90 | — | 4.0 |\\n| 100 | — | 5.0 |\\n| 110 | — | 6.0 |\\n| 120 | — | 7.0 |\\n| 130 | — | 8.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"On SiO2, the ZnO film thickness increases linearly after a short delay of a few cycles, whereas on a-Si/H, the ZnO deposition experiences a relatively long nucleation delay. Only after 80 ALD cycles, the growth also starts on the a-Si/H and enters a linear regime at about 120 cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both depositions were carried out at 100 °C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Area-selective ALD of ZnO can be obtained by exploiting the difference in nucleation delays on the two surfaces. Furthermore, the nucleation curves suggest a selectivity window (expressed as the number of ALD cycles for which no deposition is obtained on the a-Si/H) of about 80 ALD cycles before deposition occurs on both surfaces and the selectivity is lost. The key reason for the difference in nucleation delay lies in the surface chemistry because dissimilar surface groups have distinct kinetic barriers toward various thermodynamically favorable end states.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":3,"width":430,"height":359}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":431,"height":361,"image_format":"jpeg","image_sha256":"9358e6304379746b7f1d2c8f54fe3acc53e2d8c2412a5ebe0a231eb097cdaf19","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_5_figure_6.jpg","caption":"Figure 6. Selectivity for $80~\\mathrm{ZnO}$ ALD cycles as a function of the deposition temperature. The insets show the top-view SEM images of patterns realized using the same EBID parameters and number of ALD cycles, but different $\\mathrm{ZnO}$ growth temperatures (100, 150, and $250^{\\circ}\\mathrm{C}$ ); scale bars are $500~\\mathrm{nm}$ . The horizontal dotted line at $S = 1$ indicates perfect selectivity.","id":"train/atomic-layer-deposition/simulation-usecase/5/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/5/figure_6","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot shows selectivity versus deposition temperature where selectivity increases with increasing deposition temperature.\"},{\"panel_id\":\"b\",\"text\":\"SEM Microscopy images of samples deposited at different temperatures demonstrating selectivity\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition temperature (°C) | Selectivity |\\n|---|---|\\n| 100 | 0.82 |\\n| 150 | 0.96 |\\n| 200 | 0.99 |\\n| 250 | 1.00 |\"},{\"panel_id\":\"b\",\"text\":\"| 100 °C | 150 °C | 250 °C |\\n|---|---|---|\\n| ![](100°C_image.png) | ![](150°C_image.png) | ![](250°C_image.png) |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"the selectivity was calculated using the ZnO surface coverage in and outside the patterned area, as measured by top-view SEM.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The SEM-measured selectivity data confirmed the results obtained using SE: the selectivity increases with the deposition temperature up to 250 °C\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The selectivity increases as follows\\na. 0.83 at 100 °C\\nb. 0.97 at 150 °C\\nc. 0.99 at 200 °C\\nd. 0.99 at 250 °C\"}]}]","bbox":[{"panel_id":"b","x":5,"y":308,"width":551,"height":152},{"panel_id":"a","x":2,"y":2,"width":552,"height":306}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":556,"height":461,"image_format":"jpeg","image_sha256":"f50b66641f2a179ee0915cd091af838eccaf9caf2962e830ffecd844c1839f08","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_2.jpg","caption":"Figure 2. Deposition rate versus exposure of $\\mathrm{SiO}_2$ (red diamonds) and $\\mathrm{Si}_3\\mathrm{N}_4$ (green circles) films deposited from chloro-silane precursors by ALD at $450^{\\circ}\\mathrm{C}$ with less than $2\\%$ absolute variation on per cycle deposition rate.","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the per cycle deposition rate of SiO2 and Si3N4 as a function of exposure time in Torr·s.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Exposure (Torr·s) | Per cycle Dep. Rate (Å) SiO₂ | Per cycle Dep. Rate (Å) Si₃N₄ |\\n|--------------------|-------------------------------|---------------------------------|\\n| 0.02 | 0.4 | - |\\n| 0.05 | 0.8 | - |\\n| 0.10 | 1.0 | - |\\n| 1.0 | - | 0.5 |\\n| 3.0 | - | 0.9 |\\n| 10.0 | - | 1.1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Films deposited from chloro-silane precursors by ALD at 450 °C with less than 2% absolute variation on per cycle deposition rate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure compares the relative reactivity for simple chloro-silane precursors (e.g., DCS,HCDS, etc.)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Precursor exposure was varied by changing the exposure time, the exposure partial pressure, or both. Deposition rate was determined by measurement of the thickness after deposition and dividing by the number of ALD cycles performed. The very long precursor exposure for deposition of silicon nitride makes this process economically unviable, due to both the excessive throughput time per film deposited and the unacceptably high volume of silicon precursors consumed.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":592,"height":456}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":594,"height":461,"image_format":"jpeg","image_sha256":"463616b24ad45d70701af9a4941c96b51fe4f54e8c584aa1d2ae08648402517e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_6_figure_2.jpg","caption":"Figure 2. Duo-linear plot of $\\mathrm{TiO_2}$ film thickness versus the number of cycles and a silicon reference (reprinted with permission from [6]).","id":"train/atomic-layer-deposition/simulation-usecase/6/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/6/figure_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the thickness of TiO2 ALD deposited on PMMA and silicon substrates as a function of the number of cycles, showing cycle dependent GPCs.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of cycles | Thickness (Å) on PMMA |Thickness (Å) on silicon |\\n|------------------|---------------|---------------|\\n| 0 | 0 |0|\\n| 100 | 150 |75|\\n| 150 | 250 |100|\\n| 200 | 300 |120|\\n| 250 | 350 |150|\\n| 300 | 360 |160|\\n| 400 | 400 |200|\\n| 500 | 450 |250|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that PMMA as a substrate enables enhanced growth, whereas TiO2 growth on TiO2 does not enable this.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"SiO2 looks more like TiO2 in structure than PMMA does so it is likely that the growth on SiO2 looks more like the growth on TiO2 than on PMMA.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After these number of cycles the substrate does not have an influence on the growth anymore and just the TiO2 acts as a starting substrate. As this is the same for both cases it is likely that the same GPC is acquired.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The GPC is 0.74 angstrom/cycle.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":3,"width":694,"height":470}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":695,"height":472,"image_format":"jpeg","image_sha256":"98c70cc45ed040ffd673f42915a6dead412f09ab62bc934c719fa8d9184c3bcc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_11.jpg","caption":"Figure 11. Simulated GPC data, estimated from both the thickness of the simulated thin film and from the deposited mass, compared to the growth rate reported in ref 26. The GPC estimated from the average mass includes the error bars, obtained as a standard deviation from series of simulations.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_11","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_11","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between temperature and growth-per-cycle in angstroms. Data points represent measurements from Yousfi et al., kMC (average mass), and kMC (average thickness). The trend shows increasing GPC with increasing temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature / °C | Growth-per-cycle / angstrom Yousfi|Growth-per-cycle / angstrom Model|\\n|---|---|---|\\n| 0 | 0.0 |0.0 |\\n| 25 | 0.0 |0.0 |\\n| 50 | 0.25 |1.3|\\n| 75 | 0.6|2.2 |\\n| 100 |1.3| 2.6 |\\n| 125 | 2.0|2.6 |\\n| 150 | 2.1|2.6 |\\n| 175 | 2.1|2.6 |\\n| 200 | 2.0|- |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No they do not overlap in max GPC, however, the trend is similar. In addition, both methods result in an optimal deposition temperature of about 175 degrees celcius.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For too high temperatures, there can be desorption of surface species, this can result in lower GPC.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"That the temperature of the process is always higher than the bubbler temperature, such that condensation does not occur.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":613,"height":492}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":614,"height":497,"image_format":"jpeg","image_sha256":"cf2894806b97d0c0f1b7ca4aff2aa75c4302585331c8cb2b7eca4d4c2ffc0724","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_12.jpg","caption":"Figure 12. GPC as a function of temperature in the case where the barriers for the second ligand elimination reaction (LE2) have been increased by $0.10\\mathrm{eV}$ . The elimination of the MEZ from the surface is clearly the crucial step in the deposition process. Increasing the barrier shifts the observed behavior to higher temperature as the ligand-elimination reaction can occur only at elevated temperatures.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_12","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between temperature and growth-per-cycle in angstroms. This is shown for experimental data, a kMC model, and an additional model with different input variables.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature / °C | Growth-per-cycle / angstrom Yousfi|Growth-per-cycle / angstrom Model|Growth-per-cycle / angstrom Model LE2 +0.1 eV|\\n|---|---|---|---|\\n| 0 | 0.0 |0.0 |0.0 |\\n| 25 | 0.0 |0.0 |0.0 |\\n| 50 | 0.25 |1.3|0.0 |\\n| 75 | 0.6|2.2 |0.6|\\n| 100 |1.3| 2.6 |1.8|\\n| 125 | 2.0|2.6 |2.4|\\n| 150 | 2.1|2.6 |2.5|\\n| 175 | 2.1|2.6 |2.7|\\n| 200 | 2.0|- |-|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, this is especially the case for the lower temperatures where there seems to be a short delay or thresshold temperature.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This needs to be overcome by added energy via increased temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2.3 angstrom per cycle\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This is not yet visible in the graph for this temperature range, but if the model behaves according to the actual physical situation this should be the case.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":608,"height":497}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":613,"height":500,"image_format":"jpeg","image_sha256":"4a25a24c72f9493d94b95848ba38212b35d60ee654b88ee6897d47ad32d1b117","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_8_figure_13.jpg","caption":"Figure 13. Fraction of persisting ligands as a function of temperature in the simulation. Experimental data, obtained from ref 12, are measured for low and high water exposures. Low and high water exposures correspond to $10^{4}$ and $10^{7} \\mathrm{~L}$ , respectively.","id":"train/atomic-layer-deposition/simulation-usecase/8/figure_13","sample_id":"atomic-layer-deposition/simulation-usecase/8/figure_13","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the fraction of ethyl-ligands persisting at various temperatures. The simulated data points are represented by red squares, while the experimental data points are shown by gray triangles. The graph shows the fraction of ethyl-ligands persisting decreasing with increasing temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature / °C | Fraction of ethylligands persisting Simulated |Fraction of ethylligands persisting Long exposure |Fraction of ethylligands persisting short exposure |\\n|---|---|---|---|\\n| 25 | 0.83 |-|-|\\n| 50 | 0.6 |-|-|\\n| 75 | 0.5 |-|-|\\n| 100 | 0.45 |0.3|0.75|\\n| 120 | 0.45 |-|-|\\n| 150 | 0.45 |0.15|0.55|\\n| 180 | 0.45 |-|-|\\n| 200 | - |0.05|0.12|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both for long and short water exposures the experimental data does not overlap with the simulated data indicating that the model is incomplete.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Water is supposed to react with the ligands and remove them. If the exposure is shorter, it could be that there are less ligand removing reactions.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The fraction is close to one, this means that the ligands are not removed and therefore also not replaced with reactive surface sites to which new precursor molecules can adsorb. This means it is unlikely there will be any substantial growth at this temperature.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The layers grown with ALD are usually used in devices where carbon from ligands can degrade the material properties making them incompatible with the application of interest.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":619,"height":516}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/8/Timo Weckman et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":620,"height":514,"image_format":"jpeg","image_sha256":"5607376bc51e7f7ae661ad7e3de4848aab024b58874a7ed58415c791967f5fdb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_14.jpg","caption":"Figure 14. W ALE using $\\mathrm{O}_2 / \\mathrm{O}_2$ , $\\mathrm{BCl}_3$ , and HF as reactants at $207^{\\circ}\\mathrm{C}$ . (a) $\\mathrm{WO}_3$ thickness increases after $\\mathrm{O}_2 / \\mathrm{O}_3$ exposure and decreases after $\\mathrm{BCl}_3 / \\mathrm{HF}$ exposure. (b) W etching occurs with an etch rate of $2.44\\mathrm{\\AA}/$ cycle. Reproduced with permission from ref 32. Copyright 2017 American Chemical Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_14","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_14","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the thickness of WO₃ after exposure to O₂/O₃ and BCl₃/HF as a function of the number of half-cycles.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the thickness of W as a function of the number of half-cycles at 207 °C, with O2/O3, BCl3 and HF exposure. The figure shows an etch rate of 2.44 Å/cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Half-Cycles | WO₃ Thickness (Å) After O₂/O₃ | WO₃ Thickness (Å) After BCl₃/HF |\\n| --- | --- | --- |\\n| 0 | 38 | 27 |\\n| 10 | 43 | 35 |\\n| 20 | 37 | 30 |\\n| 30 | 33 | 25 |\\n| 40 | 30 | 23 |\\n| 50 | 26 | 20 |\\n| 60 | 26 | 17 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Half-Cycles | W Thickness (Å) |\\n|---|---|\\n| 0 | 230 |\\n| 10 | 215 |\\n| 20 | 200 |\\n| 30 | 190 |\\n| 40 | 175 |\\n| 50 | 170 |\\n| 60 | 155 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The experiment was performed at 207 °C with the following exposure: 3150 mTorr s of O2/O3, 329 mTorr s of BCl3, and 2800 mTorr s of HF.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The W thickness decreases as the number of half-cycles increases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seenin the figure, the etch per cycle is 2.44 Å/cycle.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thickness of the WO3 increases after exposure to O2/O3 because it can oxidize the surface. However, it decreases after exposure to BCl3/HF.\"}]}]","bbox":[{"panel_id":"b","x":1,"y":397,"width":642,"height":482},{"panel_id":"a","x":4,"y":0,"width":643,"height":417}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":653,"height":873,"image_format":"jpeg","image_sha256":"b9c9f373c395dfe158457970207748a2347e9f94ee84de6a9bb55b5fa67b53f5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_5.jpg","caption":"Figure 5. Film thickness versus number of ALE cycles for various materials using HF as fluorine reactant and (a) TMA or (b) DMAF as metal precursor for ligand-exchange. Reproduced with permission from ref 23. Copyright 2016 American Chemical Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows how the film thickness of various materials (TiN, ZrO₂, SiO₂, Si₃N₄, HfO₂, Al₂O₃) changes over cycles at 300°C using TMA.\"},{\"panel_id\":\"b\",\"text\":\"The chart shows how the film thickness of various materials (TiN, SiO₂, Si₃N₄, ZrO₂, HfO₂, Al₂O₃) changes over cycles at 250°C using DMAC.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | TiN | ZrO₂ | SiO₂ | Si₃N₄ | HfO₂ | Al₂O₃ |\\n|---|---|---|---|---|---|---|\\n| 0 | 68 | 50 | 48 | 40 | 55 | 44 |\\n| 50 | - | 48 | - | - | 50 | 20 |\\n| 100 | - | 53 | - | - | 43 | 0 |\\n| 200 | 70 | 48 | 43 | 42 | 37 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Cycles | TiN | SiO₂ | Si₃N₄ | ZrO₂ | HfO₂ | Al₂O₃ |\\n|---|---|---|---|---|---|---|\\n| 0 | 70 | 50 | 40 | 50 | 50 | 48 |\\n| 25 | 70 | 51 | 40 | 22 | 40 | 40 |\\n| 50 | 70 | 50 | 40 | 5 | 20 | 38 |\\n| 100 | 70 | 50 | 40 | 0 | 0 | 18 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Only Al2O3, HfO2, and ZrO2 exhibit etching behavior. For the other materials, the film thickness remains constante over the number of cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN has the highest film thickness values.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TMA ALE cycle was performed at 300 °C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the figure, Al2O3 exhibit the highest etch rates using TMA as reactant.\"}]}]","bbox":[{"panel_id":"b","x":49,"y":539,"width":604,"height":506},{"panel_id":"a","x":17,"y":5,"width":630,"height":526}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":658,"height":1072,"image_format":"jpeg","image_sha256":"4b524612e6fdd367954e4901d6b187e0eb9a9ce7c4819377844aab951c454e7b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_6.jpg","caption":"Figure 6. Thickness change versus number of ALE cycles for crystalline and amorphous $\\mathrm{HfO}_2$ using HF and $\\mathrm{TiCl}_4$ as reactants. Reproduced with permission from ref 29. Copyright 2020 American Vacuum Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_6","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the thickness change of crystalline and amorphous HfO₂ as a function of the number of ALE cycles at 250°C using HF/TiCl₄. The etch rate is 0.02 Å/cycle for the crystalline sample and 0.35 Å/cycle for the amorphous.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of ALE Cycles | crystalline | amorphous |\\n| --- | --- | --- |\\n| 0 | 0 | 0 |\\n| 50 | 0 | -18 |\\n| 100 | 0 | -30 |\\n| 150 | -2 | -45 |\\n| 200 | -3 | -80 |\\n| 300 | -5 | -95 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 250 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In both cases the film thickness decreases, but the change is more significant for the amorphous HfO2 film.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF and TiCl4 were used as reactants.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch rate is 0.02 Å/cycle for the crystalline film and for the amorphous film: 0.36 Å/\"}]}]","bbox":[{"panel_id":"a","x":22,"y":2,"width":629,"height":488}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":658,"height":500,"image_format":"jpeg","image_sha256":"7ffdad84762b9db9d15b5ce4b9f3435a62cb9b4c134537ccda6314668c9fd3c6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_7.jpg","caption":"Figure 7. Temperature dependence of $\\mathrm{Al}_2\\mathrm{O}_3$ ALE using $\\mathrm{SF}_4$ and $\\mathrm{Sn(acac)}_2$ . Etch rate increases from $0.04 \\mathrm{Å / cycle}$ at $150^{\\circ}\\mathrm{C}$ to $0.25 \\mathrm{Å / cycle}$ at $225^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/17/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_7","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents the film thickness of Al₂O₃ as a function of the number of atomic layer etching (ALE) cycles at four different temperatures: 150 °C, 175 °C, 200 °C, and 225 °C. Each dataset shows a monotonic decrease in thickness with increasing cycles, but the rate of etching significantly depends on temperature. At 150 °C, the change is minimal, indicating very slow etching, while the steepest decrease is observed at 200 °C and 225 °C, demonstrating a higher etch rate. The linearity in most cases suggests a consistent per-cycle removal, particularly at elevated temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | Thickness at 150 °C (Å) | Thickness at 175 °C (Å) | Thickness at 200 °C (Å) | Thickness at 225 °C (Å) |\\n|------------------|--------------------------|--------------------------|--------------------------|--------------------------|\\n| 0 | 190 | 190 | 190 | 190 |\\n| 50 | 189 | 187 | 182 | 180 |\\n| 100 | 188 | 184 | 174 | 170 |\\n| 200 | 187 | 179 | 160 | 155 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Al₂O₃ thickness consistently decreases with increasing ALE cycles at all temperatures, but the rate of this decrease varies. At 150 °C, the reduction in thickness is minimal, indicating limited etching. In contrast, at 200 °C and 225 °C, the film is etched more aggressively, with a sharp decline in thickness over 200 cycles. This suggests that higher temperatures enhance the etch efficiency, likely by improving precursor reactivity or facilitating the removal of reaction byproducts.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"150 °C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Increased SF₄ and Sn(acac)₂ reactivity at higher temperatures, enhanced byproduct desorption, improved surface diffusion.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":672,"height":547}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":672,"height":547,"image_format":"jpeg","image_sha256":"db4540cfe0dc3c8695a08295734287de8b6efe2e0e6214f581b6b6676edc8843","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_2_figure_10.jpg","caption":"Figure 10. Review of literature data of physical sputter rates reported for Si versus the square-root of Ar ion energy up to energies of $400\\mathrm{eV}^{95,118 - 132}$ along with SRIM simulation results. The threshold for physical sputtering of Si is $\\approx 20\\mathrm{eV}$ . The large scatter with regard to the threshold energy of physical sputtering for Si shows the difficulty of controlling experimental conditions.","id":"train/atomic-layer-etching/experimental-usecase/2/figure_10","sample_id":"atomic-layer-etching/experimental-usecase/2/figure_10","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents a comparative scatter plot of experimentally reported physical sputter yields of silicon (Si) as a function of the square root of Ar⁺ ion energy, compiled from multiple literature sources. The wide dispersion of data points highlights strong experiment-to-experiment variability, particularly near the sputtering threshold. A SRIM simulation curve is included as a reference, indicating an approximate threshold energy of ~20 eV for Si sputtering. The figure emphasizes the inherent difficulty in achieving precise control in physical sputtering processes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion Energy [eV] | Square Root of Ion Energy [eV^1/2] | Sputter Yield [Si/Ar^+] |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 25 | 5 | 0.05 |\\n| 100 | 10 | 0.1 |\\n| 225 | 15 | 0.2 |\\n| 400 | 20 | 0.3 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This comparison highlights the sensitivity of physical sputtering to ion energy, especially near the threshold region. In ALE, precise control of ion energy is essential to remain within the ALE window, avoiding uncontrolled sputtering. The observed scatter emphasizes the need for carefully tuned plasma and ion conditions to achieve repeatable, layer-by-layer etching.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~20 eV, as suggested by both experimental data and SRIM simulations.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Higher ion energies generally lead to increased physical sputtering of Si.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Variations in ion energy calibration, Differences in surface condition and crystallinity, Experimental setup and measurement uncertainty, Ion incidence angle and beam conditions\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":575,"height":603}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/Atomic Layer Etching at the Tipping Point An Overview.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":575,"height":603,"image_format":"jpeg","image_sha256":"f97b84f2943eb3ef0be66fcfe4cd282f2f0c34854630766a1e82df7125df6729","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_2_figure_11.jpg","caption":"Figure 11. Review of literature data of physical sputter rates for $\\mathrm{SiO_2}$ versus the square-root of Ar ion energy up to energies of $400\\mathrm{eV}^{95,122,124,128,133 - 137}$ The threshold for physical sputtering of $\\mathrm{SiO_2}$ is $\\approx 45\\mathrm{eV}$ .","id":"train/atomic-layer-etching/experimental-usecase/2/figure_11","sample_id":"atomic-layer-etching/experimental-usecase/2/figure_11","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure compiles experimental literature data and SRIM simulation results showing the physical sputter yield of SiO₂ as a function of the square root of Ar⁺ ion energy. The data reveal a clear sputtering threshold around ~45 eV, above which the sputter yield increases approximately linearly with ion energy. The wide scatter among experimental points highlights strong sensitivity to experimental conditions such as surface state, angle of incidence, and ion flux, emphasizing challenges in precise sputter control at low energies.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion Energy [eV] | Sputter Yield [SiO₂/Ar⁺] |\\n|---|---|\\n| 0 | 0.0 |\\n| 5 | 0.0 |\\n| 10 | 0.0 |\\n| 15 | 0.0 |\\n| 20 | 0.0 |\\n| 25 | 0.0 |\\n| 30 | 0.0 |\\n| 35 | 0.0 |\\n| 40 | 0.0 |\\n| 45 | 0.0 |\\n| 50 | 0.0 |\\n| 55 | 0.0 |\\n| 60 | 0.0 |\\n| 65 | 0.0 |\\n| 70 | 0.0 |\\n| 75 | 0.0 |\\n| 80 | 0.0 |\\n| 85 | 0.0 |\\n| 90 | 0.0 |\\n| 95 | 0.0 |\\n| 100 | 0.0 |\\n| 105 | 0.0 |\\n| 110 | 0.0 |\\n| 115 | 0.0 |\\n| 120 | 0.0 |\\n| 125 | 0.0 |\\n| 130 | 0.0 |\\n| 135 | 0.0 |\\n| 140 | 0.0 |\\n| 145 | 0.0 |\\n| 150 | 0.0 |\\n| 155 | 0.0 |\\n| 160 | 0.0 |\\n| 165 | 0.0 |\\n| 170 | 0.0 |\\n| 175 | 0.0 |\\n| 180 | 0.0 |\\n| 185 | 0.0 |\\n| 190 | 0.0 |\\n| 195 | 0.0 |\\n| 200 | 0.0 |\\n| 205 | 0.0 |\\n| 210 | 0.0 |\\n| 215 | 0.0 |\\n| 220 | 0.0 |\\n| 225 | 0.0 |\\n| 230 | 0.0 |\\n| 235 | 0.0 |\\n| 240 | 0.0 |\\n| 245 | 0.0 |\\n| 250 | 0.0 |\\n| 255 | 0.0 |\\n| 260 | 0.0 |\\n| 265 | 0.0 |\\n| 270 | 0.0 |\\n| 275 | 0.0 |\\n| 280 | 0.0 |\\n| 285 | 0.0 |\\n| 290 | 0.0 |\\n| 295 | 0.0 |\\n| 300 | 0.0 |\\n| 305 | 0.0 |\\n| 310 | 0.0 |\\n| 315 | 0.0 |\\n| 320 | 0.0 |\\n| 325 | 0.0 |\\n| 330 | 0.0 |\\n| 335 | 0.0 |\\n| 340 | 0.0 |\\n| 345 | 0.0 |\\n| 350 | 0.0 |\\n| 355 | 0.0 |\\n| 360 | 0.0 |\\n| 365 | 0.0 |\\n| 370 | 0.0 |\\n| 375 | 0.0 |\\n| 380 | 0.0 |\\n| 385 | 0.0 |\\n| 390 | 0.0 |\\n| 395 | 0.0 |\\n| 400 | 0.0 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding the sputtering threshold and energy-dependent yield is critical for ALE because it defines the narrow ion-energy window where material removal is controllable and self-limiting. Operating below the physical sputtering regime enables selective, damage-minimized etching, while exceeding it risks uncontrolled material loss and reduced process selectivity.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The sputter yield of SiO₂ increases approximately linearly with the square root of ion energy once the sputtering threshold is exceeded.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The sputter yield remains near zero at low ion energies and increases only after exceeding a threshold of approximately 45 eV.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Surface condition of SiO₂, Ion incidence angle, Ion energy distribution, Experimental setup variations, Measurement methodology differences\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":572,"height":600}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/2/Atomic Layer Etching at the Tipping Point An Overview.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":572,"height":600,"image_format":"jpeg","image_sha256":"af1e24a90182f1b29ed4f1ee1ade03091899201c0f4f4b905dde823f3aee6061","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_22_figure_5.jpg","caption":"Figure 5. Thickness measurements were acquired after etching of amorphous as-deposited ALD $\\mathrm{MoS}_2$ films on $\\mathrm{SiO}_2$ coupons at $200^{\\circ}\\mathrm{C}$ . Both SE and XRR thickness measurements show a linear decrease in film thickness. A linear fit of the data produces an etching rate of 0.05 nm/cycle for amorphous $\\mathrm{MoS}_2$ .","id":"train/atomic-layer-etching/experimental-usecase/22/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/22/figure_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Panel (a) shows no change in thickness when only Hhfac is used, even after 20 pulses.\"},{\"panel_id\":\"b\",\"text\":\"Similarly, panel (b) indicates no measurable thickness reduction with H₂ plasma alone.\"},{\"panel_id\":\"c\",\"text\":\"In contrast, panel (c) demonstrates a steady linear decrease in film thickness when both Hhfac and H₂ plasma are applied in combination, highlighting the synergistic effect of this treatment for etching. These results suggest that neither precursor nor plasma alone is sufficient to etch the surface, but their combination results in controlled material removal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of pulses/cycles | Thickness change (nm) |\\n|--------------------------|------------------------|\\n| 0 | 0 |\\n| 5 | 0 |\\n| 10 | 0 |\\n| 15 | 0 |\\n| 20 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of pulses/cycles | Thickness change (nm) |\\n|--------------------------|------------------------|\\n| 0 | 0 |\\n| 5 | 0 |\\n| 10 | 0 |\\n| 15 | 0 |\\n| 20 | 0 |\"},{\"panel_id\":\"c\",\"text\":\"| Number of pulses/cycles | Thickness change (nm) |\\n|--------------------------|------------------------|\\n| 0 | 0 |\\n| 5 | -0.5 |\\n| 10 | -1.0 |\\n| 15 | -1.5 |\\n| 20 | -2.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thickness decreases by approximately 2.0 nm after 20 cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"(a): Hhfac, no thickness change, (b): H₂ plasma, no thickness change , (c): Hhfac + H₂ plasma, linear decrease in thickness\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In atomic layer etching, precursor adsorption alone often does not result in material removal due to the lack of activation energy. Similarly, plasma exposure alone may not modify the surface sufficiently for etching to occur. The combination of Hhfac and H₂ plasma enables a two-step mechanism where Hhfac modifies the surface chemically, and the H₂ plasma provides energetic species to drive desorption or reaction of surface-bound fragments.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":483,"height":389}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/Thermal Atomic Layer Etching of MoS2 Using MoF6 and H2O.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":483,"height":389,"image_format":"jpeg","image_sha256":"5051dfebc7e58adcabf584de46f39386c987bd7e00dd2c11f7a3988ff58373a5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_4.jpg","caption":"Figure 4. Expansion showing thickness of $\\mathrm{ZnS}$ film during the first 5 $\\mathrm{ZnS}$ ALE cycles in Figure 3.","id":"train/atomic-layer-etching/experimental-usecase/23/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_4","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows an expanded view of the ZnS thickness evolution over the first few ALE cycles. It plots the ZnS film thickness as a function of ZnS ALE cycle number using HF and TMA as reactants at 300 °C, focusing only on the 0–5 cycle region. The initial ZnS films used for ALE were deposited by ALD at 100 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALE Cycles | ZnS Thickness (Å) | Stage | \\n|------------|--------------------|-----------------------------|\\n| 0 | 203 | Initial ZnS thickness | \\n| 0 | - | After HF Exposure | \\n| 0 | - | After TMA Exposure | \\n| 0.5 | - | Initial ZnS thickness | \\n| 0.5 | 203.52 | After HF Exposure | \\n| 0.5 | - | After TMA Exposure | \\n| 1 | - | Initial ZnS thickness | \\n| 1 | - | After HF Exposure | \\n| 1 | 203.62 | After TMA Exposure | \\n| 1.5 | - | Initial ZnS thickness | \\n| 1.5 | 201.9 | After HF Exposure | \\n| 1.5 | - | After TMA Exposure | \\n| 2 | - | Initial ZnS thickness | \\n| 2 | - | After HF Exposure | \\n| 2 | 201.58 | After TMA Exposure | \\n| 2.5 | - | Initial ZnS thickness | \\n| 2.5 | 200 | After HF Exposure | \\n| 2.5 | - | After TMA Exposure | \\n| 3 | - | Initial ZnS thickness | \\n| 3 | - | After HF Exposure | \\n| 3 | 199.4 | After TMA Exposure | \\n| 3.5 | - | Initial ZnS thickness | \\n| 3.5 | 198 | After HF Exposure | \\n| 3.5 | - | After TMA Exposure | \\n| 4 | - | Initial ZnS thickness | \\n| 4 | - | After HF Exposure | \\n| 4 | 197.25 | After TMA Exposure | \\n| 4.5 | - | Initial ZnS thickness | \\n| 4.5 | 196 | After HF Exposure | \\n| 4.5 | - | After TMA Exposure | \\n| 5 | - | Initial ZnS thickness | \\n| 5 | - | After HF Exposure | \\n| 5 | 195.1 | After TMA Exposure |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1) HF Exposure: Fluorinates/modifies the ZnS surface.\\n\\n2) Thickness Measurement.\\n\\n3) TMA Exposure: Removes the modified layer.\\n\\n4) Thickness Measurement. Measuring after each step verifies the self-limiting nature of each half-reaction and quantifies the individual contribution to the total etch per cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"HF/TMA ALE: Pro: Chemically selective to ZnS; SiO₂ is resistant to HF under these conditions.\\n\\nThermal Decomposition: Con: Non-selective; relies on volatility, likely attacking both ZnS and SiO₂.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The larger drop after HF indicates it causes the major physical removal or volumetric change, likely by converting crystalline ZnS into a porous, volatile, or low-density zinc fluoride (ZnF₂) compound. The subsequent TMA step then cleans up this modified layer, causing a smaller but essential thickness change to complete the cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This enables digital etch trimming of quantum dot layers with sub-nanometer precision. Engineers can remove exact numbers of monolayers to tune quantum confinement and emission wavelength after growth, or to expose a specific subsurface dot layer with minimal damage to adjacent layers.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":2,"width":666,"height":536}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":670,"height":539,"image_format":"jpeg","image_sha256":"5e0df4a3a6d2e6e820904418c60ac7e577bde4bd21ccd2de756ab7edcede1e35","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_5.jpg","caption":"Figure 5. Thickness change of $\\mathrm{ZnS}$ film vs number of $\\mathrm{ZnS}$ ALE cycles at 225, 250, 275, and $300^{\\circ}\\mathrm{C}$ . Initial $\\mathrm{ZnS}$ ALE films were grown at $100^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/23/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart shows the reduction in ZnS film thickness with increasing ALE cycles (0–20) at temperatures from 225 °C to 300 °C for films initially deposited at 100 °C. All values display a linear decrease in thickness, confirming a constant etch per cycle and a well-controlled, self-limiting ALE process. The slope increases with temperature, indicating thermally activated etching, with the highest etch rate at 300 °C (~2.1 Å/cycle) and the lowest at 225 °C (~1.25 Å/cycle).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of ALE Cycles | Change in ZnS Thickness (Å) | Temperature |\\n|------------|------------------|-------------|\\n| 0 | 0 | 225 °C |\\n| 0 | 0 | 250 °C |\\n| 0 | 0 | 275 °C |\\n| 0 | 0 | 300 °C |\\n| 2 | -1.23 | 225 °C |\\n| 2 | -1.86 | 250 °C |\\n| 2 | -2.35 | 275 °C |\\n| 2 | -3.59 | 300 °C |\\n| 4 | -3.59 | 225 °C |\\n| 4 | -5.20 | 250 °C |\\n| 4 | -6.56 | 275 °C |\\n| 4 | -7.80 | 300 °C |\\n| 6 | -6.68 | 225 °C |\\n| 6 | -8.91 | 250 °C |\\n| 6 | -10.77 | 275 °C |\\n| 6 | -11.88 | 300 °C |\\n| 8 | -10.27 | 225 °C |\\n| 8 | -12.25 | 250 °C |\\n| 8 | -14.72 | 275 °C |\\n| 8 | -16.71 | 300 °C |\\n| 10 | -12.37 | 225 °C |\\n| 10 | -15.84 | 250 °C |\\n| 10 | -19.31 | 275 °C |\\n| 10 | -20.79 | 300 °C |\\n| 12 | -15.84 | 225 °C |\\n| 12 | -19.18 | 250 °C |\\n| 12 | -23.02 | 275 °C |\\n| 12 | -24.87 | 300 °C |\\n| 14 | -18.56 | 225 °C |\\n| 14 | -23.02 | 250 °C |\\n| 14 | -27.47 | 275 °C |\\n| 14 | -29.94 | 300 °C |\\n| 16 | -21.16 | 225 °C |\\n| 16 | -27.22 | 250 °C |\\n| 16 | -32.04 | 275 °C |\\n| 16 | -34.27 | 300 °C |\\n| 18 | -23.02 | 225 °C |\\n| 18 | -30.93 | 250 °C |\\n| 18 | -35.76 | 275 °C |\\n| 18 | -38.24 | 300 °C |\\n| 20 | -26.48 | 225 °C |\\n| 20 | -34.27 | 250 °C |\\n| 20 | -40.46 | 275 °C |\\n| 20 | -43.18 | 300 °C |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process is thermally activated. Increasing the temperature from 225°C to 300°C nearly doubles the material removal: at 225°C, roughly -25 Å is removed after 20 cycles, whereas at 300°C, roughly -42 Å is removed.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"300°C Process: Advantage: Faster, higher-throughput etch. Disadvantage : Risk of thermal damage to the underlying sensitive layer.\\n\\n225°C Process: Advantage: Lower thermal budget, safer for the underlying layer. Disadvantage: Much slower etch rate, reducing throughput.\\n\\nFor a temperature-sensitive substrate, the 225°C process is preferable. The trade-off is accepting a slower etch rate to preserve the integrity of the underlying material.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The constant slope proves that the surface chemistry resets perfectly after every cycle. There is no \\\"memory effect,\\\" residue accumulation, or surface roughening that inhibits (or accelerates) the reaction over time; the 20th cycle removes exactly as much material as the 1st cycle, confirming the robust, self-limiting nature of the ALE mechanism.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This enables the precise tuning of optical cavity lengths in ZnS-based micro-resonators or filters. By running an exact number of ALE cycles, the thickness of a ZnS waveguide layer can be reduced with sub-nanometer accuracy, allowing for post-fabrication trimming of the device's resonant wavelength to a specific target value without degrading surface smoothness.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":4,"width":665,"height":577}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":667,"height":583,"image_format":"jpeg","image_sha256":"87f7a8eb795c5f28a0bfe24b8618b29a5cac7cbdee9abe55a69be65021579f28","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_29_fig_3.jpg","caption":"FiG. 3. Surface roughness variation of AlGaN as a function of etch depth of the AlGaN film after (a) BT step, (b) RIE, (c) ALE using $\\mathrm{Cl}_2$ plasma, and (d) ALE using $\\mathrm{Cl}_2$ gas.","id":"train/atomic-layer-etching/experimental-usecase/29/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/29/fig_3","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between etch depth and RMS roughness variation for different treatments, including RIE, ALE with Cl2 gas or Cl2 plasma, with the reference after BT.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Etch Depth (nm) | RMS Roughness Variation (nm) RIE |RMS Roughness Variation (nm) Cl2 gas |RMS Roughness Variation (nm) Cl2 plasma |\\n|---|---|---|---|\\n| 0 | 0 |0 | 0 |\\n| 3 | 0.05|0.01|0|\\n| 5 | 0.15 |0.05|0|\\n| 7 | 0.2|0.05|0|\\n| 10 | - |-|-0.01|\\n| 15 | - |-|-|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"RIE is increasing the roughness of the substrate, this is likely due to the sort of random distribution of ion influences on the substrate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the case of perfect ALE, all bumps and holes on a substrate are equally etched so the average roughness does not change.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The roughness changes with 0.15 nm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Cl2 plasma process seems to slightly decrease the roughness but remains constant, the Cl2 gas process increases the roughness on the other hand.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":4,"width":538,"height":501}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/Atomic layer etching of AlGaN using Cl2 and Ar gas.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":539,"height":505,"image_format":"jpeg","image_sha256":"555566156ae829fe484902fa42b67611173633967ab2d909e07ce9cb388792ed","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_34_fig_7.jpg","caption":"FIG. 7. $\\mathrm{Al}_2\\mathrm{O}_3$ film thickness vs cycle number of pALE for various process temperatures.","id":"train/atomic-layer-etching/experimental-usecase/34/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/34/fig_7","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares Al₂O₃ film thickness across increasing pALE cycle numbers at four different temperatures. Higher temperatures (350–400°C) show significantly greater film removal per cycle, while lower temperatures (250–300°C) show slower and less pronounced thinning, indicating a clear temperature-dependent etch rate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle number of pALE|250°C|300°C|350°C|400°C|\\n|---------------------|-----|-----|-----|-----|\\n|0|0|0|0|0|\\n|50|-5|-7|-9|-18|\\n|100|-7|-10|-12|-25|\\n|150|-8|-15|-18|-34|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure indicates that higher temperatures significantly accelerate Al₂O₃ removal during pALE, allowing for deeper etching in fewer cycles. Conversely, lower temperatures produce minimal thinning and offer finer control for delicate processing. Understanding this temperature-dependent response helps identify the optimal balance between etch rate, precision, and thermal stability for specific applications.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At higher temperatures such as 400°C, the film becomes much more negative (up to −34 nm), while at 250°C the thickness only decreases slightly (around −5 to −8 nm).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Higher thermal energy increases etch reactivity, Faster surface removal at elevated temperatures, Lower temperatures show slower, limited thinning\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":523}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/CF4 plasma-based atomic layer etching of Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":675,"height":523,"image_format":"jpeg","image_sha256":"d66e5a44f77fe217ca6add20c07c2fb5c5bb436523268e627a6909f1ca735da4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_10.jpg","caption":"Fig. 10. Cyclic number dependence of the blanket $\\mathrm{TiO_2}$ etched amount at different stage temperatures: (O) both steps had temperatures of $60^{\\circ}\\mathrm{C}$ , $(\\Delta)$ the $\\mathrm{C_4F_8}$ plasma had a temperature of $20^{\\circ}\\mathrm{C}$ and the $\\mathrm{O_2}$ plasma a temperature of $60^{\\circ}\\mathrm{C}$ , $(\\square)$ and the $\\mathrm{C_4F_8}$ plasma had a temperature of $60^{\\circ}\\mathrm{C}$ and the $\\mathrm{O_2}$ plasma a temperature of $20^{\\circ}\\mathrm{C}$ . The plasma treatment time was $30\\mathrm{s}$ under all conditions.","id":"train/atomic-layer-etching/experimental-usecase/36/fig_10","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_10","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the etched amount of TiO₂ against the number of cycles for different plasma conditions (\\\"60 °C (C₄F₈ plasma), 60 °C (O₂ plasma)\\\", \\\"20 °C (C₄F₈ plasma), 60 °C (O₂ plasma)\\\", \\\"60 °C (C₄F₈ plasma), 20 °C (O₂ plasma)\\\"). The condition \\\"60 °C (C₄F₈ plasma), 60 °C (O₂ plasma)\\\" results in the highest amount etched over cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of cycles | blencket TiO2 etched amount (nm) | Measurement |\\n|---|---|---|\\n| 0 | 0 | 60 °C (C₄F₈ plasma), 60 °C (O₂ plasma) |\\n| 1 | 0.79 | 60 °C (C₄F₈ plasma), 60 °C (O₂ plasma) |\\n| 4 | 2.94 | 60 °C (C₄F₈ plasma), 60 °C (O₂ plasma) |\\n| 8 | 5.58 | 60 °C (C₄F₈ plasma), 60 °C (O₂ plasma) |\\n| 12 | 8.68 | 60 °C (C₄F₈ plasma), 60 °C (O₂ plasma) |\\n| 0 | 0 | 20 °C (C₄F₈ plasma), 60 °C (O₂ plasma) |\\n| 1 | 0.96 | 20 °C (C₄F₈ plasma), 60 °C (O₂ plasma) |\\n| 3 | 2.19 | 20 °C (C₄F₈ plasma), 60 °C (O₂ plasma) |\\n| 5 | 3.86 | 20 °C (C₄F₈ plasma), 60 °C (O₂ plasma) |\\n| 0 | 0 | 60 °C (C₄F₈ plasma), 20 °C (O₂ plasma) |\\n| 1 | 0.6 | 60 °C (C₄F₈ plasma), 20 °C (O₂ plasma) |\\n| 3 | 1.03 | 60 °C (C₄F₈ plasma), 20 °C (O₂ plasma) |\\n| 6 | 1.54 | 60 °C (C₄F₈ plasma), 20 °C (O₂ plasma) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"O₂ plasma step is more temperature dependent. Lowering C₄F₈ plasma step temperature has little effect. Lowering the temperature for the O₂ plasma step significantly reduces the etch amount.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This suggests the step (the removal of the modified layer) is thermally activated.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"60 °C C₄F₈ plasma, 20 °C O₂ plasma (smallest error bars and least fluctuation).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"60 °C C₄F₈ plasma, 60 °C O₂ plasma (largest error bars and highest variability).\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":661,"height":438}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":669,"height":448,"image_format":"jpeg","image_sha256":"65d9ad11d60f4fc2a419d63a0b83a1d1a535b99cfba544ad1b889c4e24707fe3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_14.jpg","caption":"Fig. 14. Sidewall $\\mathrm{TiO_2}$ thicknesses of the trench pattern samples as deposited and after the cyclic processes.","id":"train/atomic-layer-etching/experimental-usecase/36/fig_14","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_14","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between depth and sidewall TiO2 thickness as deposited and for different plasma treatments (30s and 60s oxygen plasma treatment, after 8 cycles).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Depth (nm) | Sidewall TiO2 thickness (nm) | Measurement | \\n|---|---|---|\\n| 681 | 9.04 | as TiO2 deposited |\\n| 1391 | 9.55 | as TiO2 deposited |\\n| 2091 | 9.78 | as TiO2 deposited |\\n| 2786 | 9.20 | as TiO2 deposited |\\n| 3496 | 9.69 | as TiO2 deposited |\\n| 51 | 8.88 | after 8 cycles, 30 s oxygen plasma |\\n| 695 | 5.35 | after 8 cycles, 30 s oxygen plasma |\\n| 1400 | 5.88 | after 8 cycles, 30 s oxygen plasma |\\n| 2095 | 6.33 | after 8 cycles, 30 s oxygen plasma |\\n| 2800 | 6.15 | after 8 cycles, 30 s oxygen plasma |\\n| 3496 | 5.59 | after 8 cycles, 30 s oxygen plasma |\\n| 27.8 | 5.88 | after 8 cycles, 60 s oxygen plasma |\\n| 690 | 4.47 | after 8 cycles, 60 s oxygen plasma |\\n| 1391 | 5.21 | after 8 cycles, 60 s oxygen plasma |\\n| 2100 | 4.74 | after 8 cycles, 60 s oxygen plasma |\\n| 2800 | 5.10 | after 8 cycles, 60 s oxygen plasma |\\n| 3496 | 5.82 | after 8 cycles, 60 s oxygen plasma |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Not uniform, as the top remains unetched while the deeper sections show significant material removal.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"60 s plasma treatment.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ 4.4 nm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The protective layer is thicker at the top of the trench. This is demonstrated by the significantly smaller amount of etched TiO₂ at the trench opening compared to the deeper sidewalls under identical plasma conditions. The thicker protective layer at the top prevents the underlying material from being etched for longer, until the layer is fully removed.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":663,"height":433}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":666,"height":437,"image_format":"jpeg","image_sha256":"c07628641567f17b181cc1a90f1d293eece792df37bfb6d8c8e56d83c5478db0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_3.jpg","caption":"Fig. 3. (a) Depth dependence of the sidewall $\\mathrm{TiO_2}$ thicknesses before and after $\\mathrm{CF_4}$ plasma treatment for $30~\\mathrm{s}$ and (b) the sidewall etched amount.","id":"train/atomic-layer-etching/experimental-usecase/36/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_3","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart compares the sidewall TiO2 thickness in nm for pristine TiO2 and TiO2 after plasma etching as a function of depth. Sidewall thickness after etching is lower than before.\"},{\"panel_id\":\"b\",\"text\":\"The scatter plot shows the sidewall TiO2 etched amount in nm as a function of depth. The etching at lower depths is higher.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| depth (nm) | Sidewall TiO2 thickness (nm): Pristine | Sidewall TiO2 thickness (nm): after RIE |\\n| --- | --- | --- |\\n| 20 | 9,83 | 4,35 |\\n| 39 | 9,79 | 7,76 |\\n| 60 | 9,65 | 7,81 |\\n| 80 | 9,97 | 8,08 |\\n| 101 | 9,60 | 8,13 |\\n| 119 | 9,83 | 8,13 |\\n| 139 | 9,83 | 8,13 |\\n| 160 | 9,56 | 8,27 |\\n| 179 | 9,60 | 8,45 |\\n| 199 | 9,65 | 8,41 |\\n| 219 | 9,65 | 8,31 |\\n| 240 | 9,79 | 8,36 |\\n| 257 | 9,60 | 8,45 |\\n| 280 | 9,79 | 8,50 |\\n| 299 | 9,47 | 8,04 |\"},{\"panel_id\":\"b\",\"text\":\"| depth (nm) | sidewall TiO2 etched amount (nm) |\\n|---|---|\\n| 19 | 5,46 |\\n| 38 | 2,08 |\\n| 58 | 1,92 |\\n| 78 | 1,92 |\\n| 97 | 1,43 |\\n| 119 | 1,62 |\\n| 139 | 1,57 |\\n| 159 | 1,41 |\\n| 178 | 1,11 |\\n| 200 | 1,22 |\\n| 218 | 1,43 |\\n| 239 | 1,43 |\\n| 259 | 1,22 |\\n| 280 | 1,27 |\\n| 300 | 1,41 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It was uniform.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Tapered (because the etching is stronger at the top opening than deep inside).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Top 20 nm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etching gets weaker. The etched amount drops from ~5.5 nm at the top to ~1.5 nm at the bottom. This happens because plasma is mostly being consumed at the top and can't reach the bottom effectively.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":3,"width":673,"height":464},{"panel_id":"b","x":5,"y":471,"width":670,"height":460}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":677,"height":933,"image_format":"jpeg","image_sha256":"6485613f3dee907980fdfb2f2b9b7c166cc20c9ea54deaa8bf239b9ac710ad1f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_38_fig4.jpg","caption":"FIG.4. (a) Plted etch depth vs ALE cycle. Dashed line marks the transition between AlGaN and GaN layers. AFM scans of various steps (b) 25, (c) 100, (d) 300, and (e) 400 cycles.","id":"train/atomic-layer-etching/experimental-usecase/38/fig4","sample_id":"atomic-layer-etching/experimental-usecase/38/fig4","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"unknown"},{"panel_id":"c","label":"unknown"},{"panel_id":"d","label":"unknown"},{"panel_id":"e","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":76,"y":6,"width":1081,"height":470},{"panel_id":"b","x":6,"y":539,"width":644,"height":291},{"panel_id":"c","x":681,"y":546,"width":652,"height":291},{"panel_id":"d","x":10,"y":890,"width":630,"height":280},{"panel_id":"e","x":690,"y":890,"width":643,"height":289}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/High synergy atomic layer etching of AlGaNGaN.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":1344,"height":1192,"image_format":"jpeg","image_sha256":"9bc43ca2f343a8ac0c5ef28ed4b02b61f0e0fb9122b4fc36f60f570b26b143c3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_40_fig5.jpg","caption":"FIG.5. Atomic concentrations of Ti, N, O, F, and C vs Ar milling time and estimated depth for (a) original and (b) ALE-treated TiN thin films. The dashed lines are guides to the eye.","id":"train/atomic-layer-etching/experimental-usecase/40/fig5","sample_id":"atomic-layer-etching/experimental-usecase/40/fig5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Depth-profiling XPS data for the original TiN film showing atomic concentrations versus Ar sputtering time and estimated depth. At the surface, oxygen (~16%) and carbon (~12%) are elevated due to native oxide and adventitious carbon. After ~60 s of sputtering (~2 nm depth), concentrations plateau to bulk values: Ti (~49%), N (~42%), O (~6%), C (~2%), and F (~1%).\"},{\"panel_id\":\"b\",\"text\":\"Depth-profiling XPS data for the ALE-treated TiN film. The surface shows significantly lower oxygen (~8%) compared to the original film, while fluorine is slightly elevated (~6.5%). Bulk composition remains essentially unchanged from the original film, confirming that ALE affects only the top few nanometers.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sputtering time, s | Estimated depth, nm | Ti (%) | N (%) | F (%) | O (%) | C (%) |\\n|---|---|---|---|---|---|---|\\n| 0 | 0 | 32 | 38 | 3 | 15 | 12 |\\n| 60 | 2 | 46 | 45 | 3 | 5 | 2 |\\n| 120 | 3 | 48 | 43 | 2 | 6 | 2 |\\n| 180 | 5 | 48 | 43 | 2 | 6 | 2 |\\n| 240 | 7 | 48 | 42 | 2 | 6 | 2 |\\n| 300 | 8 | 50 | 42 | 2 | 6 | 2 |\\n| 360 | 10 | 48 | 41 | 2 | 6 | 2 |\"},{\"panel_id\":\"b\",\"text\":\"| Sputtering time, s | Estimated depth, nm | Ti (%) | N (%) | F (%) | O (%) | C (%) |\\n|---|---|---|---|---|---|---|\\n| 0 | 0 | 34 | 41 | 6 | 7 | 12 |\\n| 60 | 2 | 47 | 46 | 2 | 5 | 2 |\\n| 120 | 3 | 49 | 44 | 2 | 5 | 2 |\\n| 180 | 5 | 49 | 43 | 2 | 5 | 2 |\\n| 240 | 7 | 50 | 43 | 1 | 6 | 2 |\\n| 300 | 8 | 50 | 43 | 1 | 6 | 2 |\\n| 360 | 10 | 49 | 42 | 1 | 6 | 2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The compositional gradient in the first 2 nm reflects the presence of a modified surface layer on the TiN film. At the surface, native oxide formation from atmospheric exposure causes elevated oxygen content, while adventitious carbon contamination adds to the carbon signal. As the Ar ion beam sputters through this surface layer, it reaches the bulk TiN film where the composition stabilizes at the stoichiometric values determined by the ALD growth process. This depth-dependent behavior confirms that surface contamination and oxidation are confined to a thin surface region.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ti, N, F, O, C\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The surface oxygen decreases from approximately 16% in the original film to about 8% in the ALE-treated film, representing a 49% reduction.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the ALE process does not alter the bulk composition. Both the original and ALE-treated films show nearly identical bulk atomic concentrations after sputtering beyond 2 nm depth: approximately 49% Ti, 42% N, 6% O, 2% C, and 1% F. This indicates that the plasma-thermal ALE process selectively modifies only the surface region while preserving the intrinsic film properties. This characteristic is important for applications where maintaining bulk superconducting or electronic properties is essential.\"}]}]","bbox":[{"panel_id":"a","x":12,"y":13,"width":657,"height":488},{"panel_id":"b","x":18,"y":528,"width":651,"height":480}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/Isotropic plasma-thermal atomic layer etching of.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":669,"height":1008,"image_format":"jpeg","image_sha256":"db34d255221b4ea2146e04e45e267f82408f1dfbe7f7ce2b4da4dbe9f713b3af","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_40_fig_2.jpg","caption":"FIG. 2. (a) Etch rate of $\\mathrm{TiO}_2$ (red circles) and TiN (blue squares) vs the $\\mathrm{SF}_6{:}\\mathrm{H}_2$ flow rate ratio. The green shaded area represents the flow rate ratios for which selective etching of $\\mathrm{TiO}_2$ over TiN was achieved. The vertical dashed black line at a ratio of 0.2 represents the ratio used in the ALE experiments. (b) TiN thickness change vs number of cycles with exposure only to $\\mathrm{O}_2$ gas (red triangles), in situ HF (green squares), full ALE process at $200^{\\circ}\\mathrm{C}$ (purple circles), and $300^{\\circ}\\mathrm{C}$ (blue diamonds). The dashed lines are guides to the eye.","id":"train/atomic-layer-etching/experimental-usecase/40/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/40/fig_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch rate of TiO₂ and TiN as a function of SF₆:H₂ flow rate ratio.\"},{\"panel_id\":\"b\",\"text\":\"The thickness change of materials with different treatments as a function of the number of cycles\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| SF₆:H₂ flow rate ratio | TiO₂ (Å s⁻¹) | TiN (Å s⁻¹) |\\n|---|---|---|\\n| 0 | 0.00 | -0.05 |\\n| 0.05 | 0.00 | -0.05 |\\n| 0.10 | 0.18 | -0.03 |\\n| 0.15 | 0.45 | -0.02 |\\n| 0.20 | 0.58 | 0.00 |\\n| 0.25 | 0.65 | 0.16 |\\n| 0.30 | 0.73 | 0.33 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of cycles | O₂ gas (nm) | In-situ HF (nm) | ALE 200°C (nm) | ALE 300°C (nm) |\\n|---|---|---|---|---|\\n| 0 | 0 | 0 | 0 | 0 |\\n| 20 | 0 | 0 | -5 | -6.5 |\\n| 40 | 0 | 0 | -10 | -13 |\\n| 60 | 0 | 0 | -15 | -19 |\\n| 80 | 0 | -1 | -20 | -26 |\\n| 100 | 0 | -1 | -24 | -33 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A ratio of 0.2 was selected for the ALE experiments, as indicated by the vertical dashed line in the figure. This ratio was chosen because it lies at the upper boundary of the selective etching window (0.1 to 0.2) where TiO2 is etched while TiN remains unetched. At this ratio, the SF6/H2 plasma produces sufficient in-situ HF to etch the oxide layer, but the fluorine radical concentration remains low enough to avoid spontaneous etching of TiN. This maximizes the etch rate of the modified layer while maintaining selectivity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"When the SF6:H2 ratio exceeds 0.2, the concentration of fluorine radicals in the plasma becomes sufficient to spontaneously etch TiN. At lower ratios, hydrogen radicals combine with fluorine radicals to form HF molecules, which do not etch TiN due to its 3+ oxidation state. However, at higher ratios, excess fluorine radicals are available that can directly attack the TiN surface, leading to uncontrolled etching of both TiO2 and TiN and loss of selectivity.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The green shaded region represents the range of SF6:H2 flow rate ratios (0.1 to 0.2) where selective etching of TiO2 over TiN is achieved.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch rate at 300°C (3.2 Å/cycle) is approximately 33% higher than at 200°C (2.4 Å/cycle).\"}]}]","bbox":[{"panel_id":"a","x":1,"y":41,"width":650,"height":525},{"panel_id":"b","x":11,"y":586,"width":648,"height":525}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/Isotropic plasma-thermal atomic layer etching of.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":675,"height":1117,"image_format":"jpeg","image_sha256":"2bb69647bfc4e2690a1e30795d286d79c3e41894b5b83bfdb26b0d07e8aaa3a3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_40_fig_7.jpg","caption":"FIG. 7. Resistivity vs temperature for an original $60~\\mathsf{nm}$ TiN film (blue squares), an ALE-treated film of $50~\\mathsf{nm}$ thickness (red circles), and a $50~\\mathsf{nm}$ ALD TiN film (black diamonds) for comparison. The difference in $T_{c}$ between the $50~\\mathsf{nm}$ ALD film and the ALE-treated $50~\\mathsf{nm}$ film is negligible. The dashed lines are guides to the eye.","id":"train/atomic-layer-etching/experimental-usecase/40/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/40/fig_7","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Resistivity versus temperature (1.7 to 6 K) showing superconducting transitions for three TiN films. The 60 nm ALD film (blue) has Tc ≈ 3.22 K and resistivity ~222 μΩcm. The ALE-treated 50 nm film (red) and 50 nm ALD reference (black) show nearly identical Tc ≈ 3.1 K, demonstrating that ALE does not degrade superconducting properties beyond the expected thickness dependence.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature, K | 60 nm ALD (μΩcm) | 50 nm after ALE (μΩcm) | 50 nm ALD (μΩcm) |\\n|---|---|---|---|\\n| 2.0 | 0 | 0 | 0 |\\n| 2.5 | 0 | 0 | 0 |\\n| 2.9 | 0 | 0 | 0 |\\n| 3.0 | 0 | 0 | 85 |\\n| 3.05 | 0 | 5 | 110 |\\n| 3.1 | 15 | 150 | 150 |\\n| 3.15 | 65 | 165 | 175 |\\n| 3.2 | 150 | 185 | 190 |\\n| 3.3 | 185 | 195 | 210 |\\n| 3.5 | 210 | 200 | 220 |\\n| 4.0 | 215 | 202 | 225 |\\n| 5.0 | 218 | 203 | 227 |\\n| 6.0 | 220 | 205 | 228 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE-treated 50 nm film has Tc ≈ 3.13 K, which is nearly identical to the 50 nm ALD reference film at Tc ≈ 3.11 K. This negligible difference demonstrates that the ALE process does not introduce damage that would degrade superconducting properties. The small Tc reduction from the 60 nm film (Tc ≈ 3.22 K) is consistent with expected thickness-dependent behavior.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure demonstrates that the plasma-thermal ALE process is low-damage. Conventional etching methods often degrade superconducting properties through subsurface damage or contamination. Here, the ALE-treated film maintains the same Tc as an as-deposited film of equal thickness, confirming that ALE removes material without harming the remaining film quality.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE-treated film has lower resistivity (~201 μΩcm) compared to the 50 nm ALD film (~227 μΩcm) due to reduced native oxide after etching. The authors hypothesize that fluorine incorporation during ALE may also act as a diffusion barrier, slowing reoxidation when exposed to atmosphere.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Four-point resistivity measurements using a Quantum Design DynaCool Physical Property Measurement System (PPMS) from 6 K down to 1.7 K.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":3,"width":668,"height":537}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/Isotropic plasma-thermal atomic layer etching of.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":542,"image_format":"jpeg","image_sha256":"dc38a50162b60d977b7f24fc47c3d3159bb61574b450b9f00a79347ae0751e66","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_42_figure_2.jpg","caption":"Figure 2. (a) Film thickness versus number of HF and $\\mathrm{Sn(acac)}_2$ reaction cycles at $200^{\\circ}\\mathrm{C}$ for a variety of materials. (b) Film thickness versus number of HF and $\\mathrm{Sn(acac)}_2$ reaction cycles at $200^{\\circ}\\mathrm{C}$ for $\\mathrm{Al}_2\\mathrm{O}_3$ , $\\mathrm{HfO}_2$ , and $\\mathrm{ZrO}_2$ showing etch rates.","id":"train/atomic-layer-etching/experimental-usecase/42/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/42/figure_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the film thickness of various materials (TiN, SiO₂, Si₃N₄, HfO₂, ZrO₂, Al₂O₃) at 200°C when Sn(acac)2 is used for etching.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the atomic layer deposition (ALE) rates when Sn(acac)2 is used for etching for HfO₂, ZrO₂, and Al₂O₃ at 200°C over cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Film Thickness (Å) | TiN | SiO₂ | Si₃N₄ | HfO₂ | ZrO₂ | Al₂O₃ |\\n|-------------------|-----|------|-------|------|------|-------|\\n| 0 | 70 | 50 | 40 | 30 | 0 | 30 |\\n| 1-30-1-30 | 68 | 48 | 38 | 32 | 0 | 28 |\\n| 200°C | 66 | 46 | 36 | 30 | 0 | 26 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Cycles | HfO₂ ALE: 0.06 Å/cycle | ZrO₂ ALE: 0.14 Å/cycle | Al₂O₃ ALE: 0.23 Å/cycle |\\n|------------------|------------------------|------------------------|-------------------------|\\n| 0 | 50 | 50 | 50 |\\n| 100 | 45 | 45 | 40 |\\n| 200 | 40 | 40 | 25 |\\n| 400 | 35 | 35 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Sequential exposures of HF and acetylacetone (acacH, Sigma-Aldrich >99%) did not lead to the etching of Al2O3 at 200 °C. Without the metal acetylacetonate precursor, acetylacetone alone does not yield thermal ALE.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"From the film thicknesses after 50, 100, 200, and 400 ALE cycles using sequential HF and Sn(acac)2 exposures at 200 °C, Al2O3, ZrO2, and HfO2 films were etched linearly versus the number of ALE cycles. In contrast, there were no measurable\\nthickness changes for the SiO2, Si3N4, and TiN films.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The slopes from the linear least-squares fittings of the data in image b yielded etch rates of 0.23 Å/cycle, 0.14 Å/cycle, and 0.06 Å/cycle for the Al2O3, ZrO2, and HfO2 films, respectively\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Additional control experiments were performed on the Al2O3, ZrO2, and HfO2 films to determine if both HF and Sn(acac)2 were necessary for the thermal ALE. Experiments using 200 cycles of HF exposures observed negligible thickness changes for the Al2O3, ZrO2, and HfO2 films.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":4,"width":671,"height":454},{"panel_id":"b","x":0,"y":464,"width":665,"height":534}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/Selectivity in Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":673,"height":1003,"image_format":"jpeg","image_sha256":"8e969cb2dbf584acd89641ce66d575dfdd841aaa9ad1b55912724f73559f7059","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_42_figure_3.jpg","caption":"Figure 3. (a) Film thickness versus number of HF and TMA reaction cycles at $300^{\\circ}\\mathrm{C}$ for a variety of materials. (b) Film thickness versus number of HF and TMA reaction cycles at $300^{\\circ}\\mathrm{C}$ for $\\mathrm{Al}_2\\mathrm{O}_3$ , $\\mathrm{HfO}_2$ , and $\\mathrm{ZrO}_2$ showing etch rates.","id":"train/atomic-layer-etching/experimental-usecase/42/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/42/figure_3","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the film thickness of various materials (TiN, ZrO₂, SiO₂, Si₃N₄, HfO₂, Al₂O₃) at 300°C using TMA and HF for ALE etching.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the atomic layer etching (ALE) rates of ZrO₂, HfO₂, and Al₂O₃ at 300°C using TMA and HF\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | TiN (Å) | SiO₂ (Å) | Al₂O₃ (Å) | Si₃N₄ (Å) | HfO₂ (Å) | ZrO₂ (Å) |\\n|-------------------|---------|----------|-----------|-----------|----------|----------|\\n| 0 | 65 | 50 | 45 | 45 | 55 | 50 |\\n| 50 | 65 | 49 | 30 | 44 | 50 | 49 |\\n| 100 | 65 | 48 | 15 | 43 | 48 | 48 |\\n| 150 | 65 | 47 | 5 | 42 | 40 | 47 |\\n| 200 | 65 | 46 | 0 | 42 | 38 | 46 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Cycles | Al₂O₃ (Å) | HfO₂ (Å) | ZrO₂ (Å) |\\n|-------------------|-----------|----------|----------|\\n| 0 | 45 | 55 | 50 |\\n| 50 | 20 | 50 | 49 |\\n| 100 | 0 | 48 | 48 |\\n| 150 | - | 40 | 47 |\\n| 200 | 0 | 38 | 47 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"All the ALE processes on different materials with HF and TMA are thermal processes conducted at 300 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film thicknesses after 25, 50, 100, and 200 ALE cycles using sequential HF and TMA exposures at 300 °C. The Al2O3 and HfO2 films were etched linearly versus the number of ALE cycles. There were negligible thickness changes during 200 ALE cycles for the ZrO2, SiO2, Si3N4, and TiN films.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Etch rates of 0.45 Å/cycle and 0.10 Å/cycle were measured for the Al2O3 and HfO2 films, respectively. The etch rate of Al2O3 is in agreement with the value measured earlier by quartz crystal microbalance\\n(QCM) and SE experiments.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":455},{"panel_id":"b","x":0,"y":471,"width":669,"height":538}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/Selectivity in Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":1009,"image_format":"jpeg","image_sha256":"8324b60255a0acd9120ea88d7bed815d40e0a82cb6273ef6a33d15380937a7af","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_42_figure_4.jpg","caption":"Figure 4. (a) Film thickness versus number of HF and DMAC reaction cycles at $250^{\\circ}\\mathrm{C}$ for a variety of materials. (b) Film thickness versus number of HF and DMAC reaction cycles at $250^{\\circ}\\mathrm{C}$ for $\\mathrm{Al}_2\\mathrm{O}_3$ , $\\mathrm{HfO}_2$ , and $\\mathrm{ZrO}_2$ showing etch rates.","id":"train/atomic-layer-etching/experimental-usecase/42/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/42/figure_4","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the film thickness of various materials (TiN, SiO₂, Si₃N₄, ZrO₂, HfO₂, Al₂O₃) at 250°C for various DMAC and HF etch cycles.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the atomic layer etching (ALE) etch rates of HfO₂, Al₂O₃, and ZrO₂ at 250°C\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Film Thickness (Å) | TiN | SiO₂ | Si₃N₄ | ZrO₂ | HfO₂ | Al₂O₃ |\\n|-------------------|-----|------|-------|------|------|-------|\\n| 0 | 65 | 50 | 40 | 40 | 50 | 45 |\\n| 25 | 65 | 50 | 40 | 30 | 40 | 40 |\\n| 50 | 65 | 50 | 40 | 20 | 30 | 35 |\\n| 100 | 65 | 50 | 40 | 0 | 0 | 20 |\"},{\"panel_id\":\"b\",\"text\":\"| Film Thickness (Å) | HfO₂ ALE: 0.77 Å/cycle | Al₂O₃ ALE: 0.32 Å/cycle | ZrO₂ ALE: 0.96 Å/cycle |\\n|-------------------|-------------------------|-------------------------|-------------------------|\\n| 0 | 50 | 45 | 50 |\\n| 25 | 40 | 40 | 35 |\\n| 50 |20 | 35 | 10 |\\n| 100 | 0 | 20 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film thicknesses after 10, 25, 50, and 100 ALE cycles using sequential HF and DMAC exposures at 250 °C show linear etching\\n for the ZrO2, HfO2, and Al2O3 films. While no measurable thickness changes were observed for the SiO2, Si3N4, and TiN films\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"250 °C\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Al2O3\\n, 2. HfO2\\n, 3. ZrO2\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Etch rates of 0.96 Å/cycle, 0.77 Å/cycle, and 0.32 Å/cycle were determined for the ZrO2, HfO2, and Al2O3 films, respectively. Al2O3 etched at the slowest rate compared to the other two materials.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":673,"height":451},{"panel_id":"b","x":0,"y":464,"width":671,"height":538}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/Selectivity in Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":673,"height":1005,"image_format":"jpeg","image_sha256":"685e938ba593f3319495ae96ac1a4eadaeffd0c0e2944819df52f53421f16306","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_42_figure_5.jpg","caption":"Figure 5. (a) Film thickness versus number of HF and $\\mathrm{SiCl}_4$ reaction cycles at $350^{\\circ}\\mathrm{C}$ for a variety of materials. (b) Film thickness versus number of HF and $\\mathrm{SiCl}_4$ reaction cycles at $350^{\\circ}\\mathrm{C}$ for $\\mathrm{Al}_2\\mathrm{O}_3$ , $\\mathrm{HfO}_2$ , and $\\mathrm{ZrO}_2$ showing etch rates.","id":"train/atomic-layer-etching/experimental-usecase/42/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/42/figure_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the film thickness of various materials (TiN, Al₂O₃, SiO₂, Si₃N₄, HfO₂, ZrO₂) at 350°C using SiCl₄ as function of number of cycles\"},{\"panel_id\":\"b\",\"text\":\"The figure compares the film thickness of Al₂O₃, HfO₂, and ZrO₂ with different atomic layer deposition (ALE) rates at 350°C using SiCl₄.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | TiN (Å) | SiO₂ (Å) | Al₂O₃ (Å) | Si₃N₄ (Å) | HfO₂ (Å) | ZrO₂ (Å) |\\n|-------------------|---------|----------|-----------|-----------|----------|----------|\\n| 0 | 65 | 50 | 45 | 45 | 55 | 50 |\\n| 100 | 65 | 48 | 44 | 44 | 50 | 35 |\\n| 200 | 65 | 47 | 44 | 43 | 48 | 20 |\\n| 300 | 65 | 46 | 43 | 42 | 46 | 10 |\\n| 400 | 65 | 45 | 43 | 42 | 44 | 5 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Cycles | Al₂O₃ (Å) | HfO₂ (Å) | ZrO₂ (Å) |\\n|-------------------|-----------|----------|----------|\\n| 0 | 45 | 55 | 50 |\\n| 100 | 45 | 50 | 35 |\\n| 200 | 45 | 48 | 20 |\\n| 300 | 45 | 46 | 10 |\\n| 400 | 45 | 44 | 5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film thicknesses after 50, 100, 200, and 400 ALE cycles using sequential HF and SiCl4 exposures at 350 °C. The ZrO2 and HfO2 films were etched linearly versus the number of ALE cycles. In contrast, there were no measurable thickness changes during 400 ALE cycles for the Al2O3, SiO2, Si3N4, and TiN films\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Al₂O₃ ALE: 0 Å/cycle \\n, HfO₂ ALE: 0.05 Å/cycle \\n, ZrO₂ ALE: 0.14 Å/cycle\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Image b shows only those materials which get etched with HF anf SiCl4 from the group shown in image a\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":669,"height":468},{"panel_id":"b","x":2,"y":470,"width":664,"height":528}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/Selectivity in Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":1005,"image_format":"jpeg","image_sha256":"24098daf06b854c9163821f2cf3c8b0f8a7c67472fc77be0b6040dd61f2417fc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_42_figure_6.jpg","caption":"Figure 6. (a) Etch rates for $\\mathrm{ZrO}_2$ and $\\mathrm{HfO}_2$ versus $\\mathrm{SiCl}_4$ exposure time with constant HF exposure time of $1.0~\\mathrm{s}$ . (b) Etch rates for $\\mathrm{ZrO}_2$ and $\\mathrm{HfO}_2$ versus HF exposure time with constant $\\mathrm{SiCl}_4$ exposure time of $2.0~\\mathrm{s}$ .","id":"train/atomic-layer-etching/experimental-usecase/42/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/42/figure_6","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch rate of ZrO₂ and HfO2 increases slightly with increasing SiCl₄ exposure time at 350°C.\"},{\"panel_id\":\"b\",\"text\":\"The etch rate of ZrO₂ increases significantly while HfO2 only slightly with increasing HF exposure time at 350°C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| SiCl₄ Exposure Time (s) | ZrO₂ Etch Rate (Å/cycle) | HfO₂ Etch Rate (Å/cycle) |\\n|--------------------------|---------------------------|---------------------------|\\n| 0.0 | 0.00 | 0.00 |\\n| 0.5 | 0.13 | 0.05 |\\n| 1.0 | 0.14 | 0.06 |\\n| 1.5 | 0.14 | 0.06 |\\n| 2.0 | 0.14 | 0.06 |\"},{\"panel_id\":\"b\",\"text\":\"| HF Exposure Time (s) | ZrO₂ Etch Rate (Å/cycle) | HfO₂ Etch Rate (Å/cycle) |\\n|--------------------------|---------------------------|---------------------------|\\n| 0.0 | 0.00 | 0.00 |\\n| 0.5 | 0.07 | 0.03 |\\n| 1.0 | 0.12 | 0.05 |\\n| 1.5 | 0.15 | 0.06 |\\n| 2.0 | 0.17 | 0.06 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rates for both ZrO2 and HfO2 are self-limiting versus SiCl4 exposure. The etch rates are constant at progressively larger SiCl4 exposure times. The etch rates at each SiCl4 exposure time were determined using at least 3−4 measured film\\nthicknesses after different numbers of ALE cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Saturated etch rate for ZrO2 = 0.14 Å/cycle\\n, 2. Saturated etch rate for HfO2 = 0.06 Å/cycle\\n, at HF exposure of 1 s and SiCl4 exposure of 1s\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate for ZrO2 begins to level off at higher HF exposures. The slight increases at larger HF exposures for ZrO2 can be attributed to the difficulty purging HF from the reactor after longer HF exposures. Residual HF remaining in the reactor will lead to chemical vapor etching (CVE) during the SiCl4 exposure. Similar influences of CVE on thermal ALE have been observed earlier after longer HF exposures.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":6,"width":669,"height":366},{"panel_id":"b","x":0,"y":377,"width":673,"height":376}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/Selectivity in Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":675,"height":755,"image_format":"jpeg","image_sha256":"20569855f7d316f1dff5d5cb45a6e82fb45e7830b4503a4e6e222c2993aeacdf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_42_figure_8.jpg","caption":"Figure 8. Thermochemical calculations for the ligand-exchange reactions between $\\mathrm{SiCl_4}$ and $\\mathrm{AlF}_3,$ $\\mathrm{HfF_4}$ and $\\mathrm{ZrF_4}$ Ligand exchange is assumed to proceed completely to $\\mathrm{SiF_4}$ and the corresponding metal chloride.","id":"train/atomic-layer-etching/experimental-usecase/42/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/42/figure_8","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the change in Gibbs free energy (ΔG) for three different chemical reactions as a function of temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | ΔG for SiCl₄ + AlF₃ / SiF₄ + AlCl₃ (kcal/mol) | ΔG for SiCl₄ + HfF₄ / SiF₄ + HfCl₄ (kcal/mol) | ΔG for SiCl₄ + ZrF₄ / SiF₄ + ZrCl₄ (kcal/mol) |\\n|------------------|-----------------------------------------------|-----------------------------------------------|-----------------------------------------------|\\n| 0 | 45 | 8 | 5 |\\n| 100 | 40 | 5 | 2 |\\n| 200 | 35 | 2 | 0 |\\n| 300 | 30 | -2 | -5 |\\n| 400 | 25 | -6 | -10 |\\n| 500 | 20 | -10 | -15 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thermochemistry of the ligand exchange was determined assuming complete ligand exchange to form SiF4 and the fully chlorinated metal in the original metal fluoride.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thermochemical results for the ligand exchange between SiCl4 and AlF3, ZrF4 and HfF4 can be seen in the image. These\\nresults reveal that the ligand exchange between SiCl4 and ZrF4 or HfF4 is thermochemically favorable at >200 °C. In contrast,\\nthe ligand exchange between SiCl4 and AlF3 is not thermchemically favorable at any temperature.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ZrF4 and HfF4 can both undergo ligand exchange with SiCl4 at 350 °C because these reactions are spontaneous with ΔG ≈ −10 kcal/mol. On the other hand, Al2O3 can not be etched at 350 °C because the ligand exchange between SiCl4 and AlF3 is not spontaneous with ΔG ≈ + 26 kcal/mol.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":1,"y":4,"width":661,"height":556}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/Selectivity in Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":666,"height":564,"image_format":"jpeg","image_sha256":"51e58fa207e82e7bac33ca8518e5f4617b4efd3b04f6ce7fa461eb5684f4b228","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_43_fig_3.jpg","caption":"Fig. 3. Mass change per cycle as a function of (a) $\\mathrm{NF_3}$ remote plasma time or (b) TMA pulse time at $250^{\\circ}\\mathrm{C}$ . The TMA pulse time was $3\\mathrm{~s~}$ in (a), and the $\\mathrm{NF_3}$ remote plasma time was $4\\mathrm{~s~}$ in (b).","id":"train/atomic-layer-etching/experimental-usecase/43/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/43/fig_3","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This two-panel figure shows Mass Change Per Cycle (MCPC) (ng/(cm²·cycle)) data for the Atomic Layer Etching (ALE) of Al₂O₃, MCPC varies the NF₃ plasma time (with fixed 3s TMA)\"},{\"panel_id\":\"b\",\"text\":\"Mass Change Per Cycle (MCPC) (ng/(cm²·cycle)) varies the TMA pulse time (with fixed 4s NF₃). Both plots show the mass loss saturating, proving each half-reaction is self-limiting.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| NF₃ Remote Plasma Time (s) | MCPC (ng/(cm²·cycle)) | Symbol |\\n|---|---|---|\\n| 0 | 0 |NF₃ remote plasma (square) |\\n| 1.5 | -25 | NF₃ remote plasma (square) |\\n| 2.0 | -60 | NF₃ remote plasma (square) |\\n| 3.0 | -70 | NF₃ remote plasma (square) |\\n| 4.0 | -60 | NF₃ remote plasma (square) |\\n| 4.0 | -2 | NF₃ gas (circle) |\"},{\"panel_id\":\"b\",\"text\":\"| TMA Pulse Time (s) | MCPC (ng/(cm²·cycle)) |\\n|---|---|\\n| 0.0 | 0 |\\n| 0.5 | -25 |\\n| 1.5 | -45 |\\n| 3.0 | -55 |\\n| 4.5 | -58 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The curve would still rise but plateau at a lower maximum mass loss. With an undersaturated TMA dose, not all the fluorinated layer is removed each cycle. The process would not be fully self-limiting or stable, as the etch depth would depend on the incomplete removal step, leading to poor control and possible residue accumulation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The grey region represents an incubation or threshold period. During these short exposures, the incoming fluorine radical flux is too low to fully fluorinate the Al₂O₃ surface to the depth needed for the subsequent ligand-exchange reaction with TMA. Because a sufficient coverage of surface fluoride (AlFₓ) species has not yet formed, TMA cannot remove material, resulting in nearly zero MCPC.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"60 ng/(cm²·cycle corresponds to roughly 2.0 Å/cycle\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"NF₃ Remote Plasma Exposure (4 s)\\n\\n, Purge\\n\\n, TMA Exposure (3 s)\\n\\n, Purge\"}]}]","bbox":[{"panel_id":"a","x":0,"y":4,"width":627,"height":575},{"panel_id":"b","x":5,"y":600,"width":619,"height":575}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/Surface reaction during thermal atomic layer etching of aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":628,"height":1183,"image_format":"jpeg","image_sha256":"c28a2d1d5a2e74c0305b445f4263a5894060af962d843b0fe423cce36af4f698","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_45_figure_10.jpg","caption":"Figure 10. X-ray reflectivity and spectroscopic ellipsometry measurements of TiN film thickness versus number of $\\mathrm{H}_2\\mathrm{O}_2$ and HF reaction cycles at $250^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/45/figure_10","sample_id":"atomic-layer-etching/experimental-usecase/45/figure_10","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the film thickness in Ångströms (Å) over the number of cycles for XRR and SE methods at 250°C using H₂O₂ and HF\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | XRR (Film Thickness, Å) | SE (Film Thickness, Å) |\\n|---|---|---|\\n| 0 | 63 | 73 |\\n| 50 | 58 | 66 |\\n| 100 | 51 | 61 |\\n| 200 | 39 | 46 |\\n| 400 | 6 | 12 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Using both X-ray reflectivity and spectroscopic ellipsometry provides independent verification of the thickness measurements. XRR also yields additional information about film density and surface roughness. The close agreement between techniques (0.14 vs 0.15 Å/cycle) confirms measurement reliability.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The H₂O₂/HF etch rate (0.15 Å/cycle) is slightly lower than the O₃/HF etch rate (0.20 Å/cycle) at 250°C, reflecting O₃'s stronger oxidizing power.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Linearity confirms that each ALE cycle removes a constant, reproducible amount of material, demonstrating true self-limiting behavior rather than uncontrolled continuous etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"SE measured ~73 Å initial thickness; XRR measured ~63 Å. This offset is maintained throughout but both yield the same etch rate slope.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":0,"width":662,"height":529}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/Thermal Atomic Layer Etching of Titanium Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":669,"height":533,"image_format":"jpeg","image_sha256":"fa978ceca71019483da724568888267957195c7e03c4b4dae16c22dfdfeb5f1b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_45_figure_3.jpg","caption":"Figure 3. X-ray reflectivity and spectroscopic ellipsometry measurements of TiN film thickness versus number of $\\mathrm{O}_3$ and HF reaction cycles at $250^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/45/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/45/figure_3","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the decrease in film thickness over cycles for TiN ALE at 250°C using O₃ & HF\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | SE (Film Thickness, Å) | XRR (Film Thickness, Å) |\\n|---|---|---|\\n| 0 | 73 | 63 |\\n| 25 | 68 | 61 |\\n| 50 | 63 | 57 |\\n| 100 | 52 | 47 |\\n| 150 | 45 | 26 |\\n| 200 | 34 | 27 |\\n| 300 | 16 | 6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SE gives 0.19 Å/cycle and XRR gives 0.20 Å/cycle—essentially identical within experimental uncertainty, validating both measurement approaches.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The offset (~10 Å difference in initial thickness) arises from different optical/structural models used by each technique. SE uses a Lorentz optical model while XRR measures electron density contrast. Despite this absolute offset, both yield the same etch rate slope.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The optimized sequence was 3-30-1-30: 3 s O₃ exposure, 30 s N₂ purge, 1 s HF exposure, 30 s N₂ purge.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 60 Å of TiN is removed after 300 cycles, reducing the film from ~70 Å to ~10 Å (based on XRR data).\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":664,"height":524}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/Thermal Atomic Layer Etching of Titanium Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":670,"height":533,"image_format":"jpeg","image_sha256":"8db63fc4f91082c39c489cb9489e931881fa002014e0139c8f1873f7f7763710","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_45_figure_5.jpg","caption":"Figure 5. Film thickness versus number of $\\mathrm{O}_3$ and HF reaction cycles at $250^{\\circ}\\mathrm{C}$ for $\\mathrm{Al}_2\\mathrm{O}_3$ , $\\mathrm{HfO}_2$ , $\\mathrm{ZrO}_2$ , $\\mathrm{SiO}_2$ , $\\mathrm{Si}_3\\mathrm{N}_4$ , and TiN.","id":"train/atomic-layer-etching/experimental-usecase/45/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/45/figure_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure demonstrates selective TiN etching using O₃/HF at 250°C. TiN (gray diamonds) shows linear thickness reduction while Al₂O₃, HfO₂, ZrO₂, SiO₂, and Si₃N₄ remain essentially unchanged over 400 cycles. This confirms high selectivity of the ALE process for TiN over common dielectrics and barrier materials.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | TiN | Al₂O₃ | Si₃N₄ | SiO₂ | ZrO₂ | HfO₂ |\\n|-----------------|-----|-------|------|-----|------|------|\\n| 0 | 75 | 40 | 40 | 55 | 55 | 55 |\\n| 100 | 40 | 40 | 40 | 55 | 55 | 55 |\\n| 200 | 20 | 40 | 40 | 55 | 55 | 55 |\\n| 300 | 10 | 40 | 40 | 55 | 55 | 55 |\\n| 400 | 5 | 40 | 40 | 55 | 55 | 55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Etched: TiN only. Unchanged: Al₂O₃, HfO₂, ZrO₂, SiO₂, and Si₃N₄.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"These metal oxides form stable, non-volatile fluorides (AlF₃, HfF₄, ZrF₄) when exposed to HF. Unlike TiF₄ which sublimes at 284°C, these fluorides remain on the surface and cannot be removed thermally under ALE conditions.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Dry HF (without H₂O present) cannot etch SiO₂. The HF/SiO₂ reaction requires water as a catalyst for effective etching.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Selective etching allows precise removal of one material while preserving adjacent structures. For TiN, selective ALE enables controlled thinning or removal without damaging surrounding dielectrics like HfO₂ gate oxides or SiO₂ interlayer dielectrics.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":1,"width":662,"height":533}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/Thermal Atomic Layer Etching of Titanium Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":537,"image_format":"jpeg","image_sha256":"ee300273ded21a5a8c7e01786806a647f4df35db537fe6752c2d863decd5609d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_15_fig_1.jpg","caption":"FIG. 1. Amount of silicon etched as a function of cycle number. For these results, one cycle corresponds to 2255 $\\mathrm{Cl}_2$ impacts and $1000\\mathrm{Ar}^+$ impacts. Each line corresponds to results for a different $\\mathrm{Ar}^+$ ion energy: blue (lowest curve) $-40\\mathrm{eV}$ , green (second lowest curve) $-60\\mathrm{eV}$ , red (second highest curve) $-80\\mathrm{eV}$ , and black (highest curve) $-100\\mathrm{eV}$ . The vertical dashed lines separate the $\\mathrm{Cl}_2$ and $\\mathrm{Ar}^+$ portions of the ALE cycles.","id":"train/atomic-layer-etching/simulation-usecase/15/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/15/fig_1","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows silicon ALE using cyclic Cl₂ adsorption and Ar⁺ bombardment, producing a characteristic stair-step etch profile. Material removal occurs only during the ion step, confirming the self-limiting ALE sequence. The etch per cycle increases with ion energy, from ~3 Å at 40 eV to ~11 Å at 100 eV after 8 cycles, indicating that higher energies may exceed the monolayer-limited regime.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle number | Si etched (Å) | Ion energy (eV) |\\n|-------------:|--------------:|---------------:|\\n| 1 | 0.3 | 40 |\\n| 1 | 0.6 | 60 |\\n| 1 | 1.0 | 80 |\\n| 1 | 1.4 | 100 |\\n| 2 | 0.5 | 40 |\\n| 2 | 1.0 | 60 |\\n| 2 | 1.7 | 80 |\\n| 2 | 2.6 | 100 |\\n| 3 | 0.8 | 40 |\\n| 3 | 1.6 | 60 |\\n| 3 | 2.5 | 80 |\\n| 3 | 3.6 | 100 |\\n| 4 | 1.2 | 40 |\\n| 4 | 2.2 | 60 |\\n| 4 | 3.5 | 80 |\\n| 4 | 5.0 | 100 |\\n| 5 | 1.7 | 40 |\\n| 5 | 3.0 | 60 |\\n| 5 | 4.8 | 80 |\\n| 5 | 6.7 | 100 |\\n| 6 | 2.1 | 40 |\\n| 6 | 3.9 | 60 |\\n| 6 | 5.8 | 80 |\\n| 6 | 8.0 | 100 |\\n| 7 | 2.6 | 40 |\\n| 7 | 4.5 | 60 |\\n| 7 | 6.8 | 80 |\\n| 7 | 9.2 | 100 |\\n| 8 | 3.1 | 40 |\\n| 8 | 5.2 | 60 |\\n| 8 | 7.7 | 80 |\\n| 8 | 10.8| 100 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Spontaneous Chemical Etching. Ideally, Cl_2 should only adsorb. If the line rises, it means the chlorine is etching the silicon spontaneously without ion activation, destroying the precision of the ALE process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"40 eV (Blue). Although slower, the lower energy ensures the etch is strictly limited to the surface surface. The 100 eV ions would cause sidewall sputtering or corner rounding, ruining the shape of the delicate nano-fin.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"100 eV (Black). It removes >1.3 Å per cycle (steeper steps). This poses a risk of sub-surface damage or amorphization, as the high-energy ions penetrate deeper than the chemically modified surface layer.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The line would stay flat. Without the kinetic energy of the Ar^+ ions to knock off the chlorinated layer, no material would be removed, resulting in a 'missed step' in the staircase pattern.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":3,"width":1002,"height":458}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1009,"height":461,"image_format":"jpeg","image_sha256":"8c234eeb7004b5bc6086345f378bc5bd03fd0f61573b137f3267a6a24302217e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_15_fig_2.jpg","caption":"FIG. 2. Chlorine uptake (in units of equivalent monolayers) as a function of cycle number for the cycles described in Fig. 1. Each line corresponds to results for a different $\\mathrm{Ar}^+$ ion energy: blue (lowest curve) $-40\\mathrm{eV}$ , green (second lowest curve) $-60\\mathrm{eV}$ , red (second highest curve) $-80\\mathrm{eV}$ , and black (highest curve) $-100\\mathrm{eV}$ . The vertical dashed lines separate the $\\mathrm{CI}_2$ and $\\mathsf{Ar}^+$ portions of the ALE cycles.","id":"train/atomic-layer-etching/simulation-usecase/15/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/15/fig_2","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This graph illustrates the cyclic nature of the Atomic Layer Etching (ALE) process over 8 cycles. The \\\"sawtooth\\\" pattern represents the alternating addition of Chlorine (rising slope) and removal of material via Argon ion bombardment (falling slope). The distinct colored lines show that higher ion energies (e.g., 100 eV) result in deeper removal of the chlorinated layer compared to lower energies (e.g., 40 eV).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle number | Cu uptake (ML) | Ion energy (eV) |\\n|--------------|---------------:|-----------------:|\\n| 1 | ~1.39 | 40 |\\n| 1 | ~1.05 | 60 |\\n| 1 | ~1.17 | 80 |\\n| 1 | ~1.04 | 100 |\\n| 2 | ~1.50 | 40 |\\n| 2 | ~1.45 | 60 |\\n| 2 | ~1.40 | 80 |\\n| 2 | ~1.35 | 100 |\\n| 3 | ~1.80 | 40 |\\n| 3 | ~1.70 | 60 |\\n| 3 | ~1.60 | 80 |\\n| 3 | ~1.50 | 100 |\\n| 4 | ~1.95 | 40 |\\n| 4 | ~1.85 | 60 |\\n| 4 | ~1.75 | 80 |\\n| 4 | ~1.60 | 100 |\\n| 5 | ~2.00 | 40 |\\n| 5 | ~1.95 | 60 |\\n| 5 | ~1.85 | 80 |\\n| 5 | ~1.55 | 100 |\\n| 6 | ~2.05 | 40 |\\n| 6 | ~2.00 | 60 |\\n| 6 | ~1.95 | 80 |\\n| 6 | ~1.60 | 100 |\\n| 7 | ~2.20 | 40 |\\n| 7 | ~2.10 | 60 |\\n| 7 | ~1.95 | 80 |\\n| 7 | ~1.70 | 100 |\\n| 8 | ~2.10 | 40 |\\n| 8 | ~2.15 | 60 |\\n| 8 | ~1.60 | 80 |\\n| 8 | ~1.40 | 100 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Chlorination (Cl_2 Exposure): Represented by the rising edge where Cl uptake increases.\\nIon Bombardment (Ar^+Irradiation): Represented by the steep downward slope.\\nPhysical Action: The downward slope corresponds to the removal (etching) of the chlorinated surface layer by the argon ions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher Residual Contamination. They are accepting a trade-off where the surface retains significantly more Chlorine (approx. 0.5–0.6 ML vs 0.2 ML) after every cycle, which could alter the starting conditions for the next layer of growth or etch.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 40 eV ions possess lower kinetic energy, which is insufficient to break all the bonds holding the chlorinated species to the surface. This results in an incomplete etch, leaving a \\\"residue\\\" of chemically modified material (0.8 ML). In contrast, 100 eV ions have enough energy to sputter away nearly the entire modified layer, resulting in a cleaner surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies process drift and a loss of the \\\"self-limiting\\\" characteristic essential for ALE. If the residual chlorine accumulates with every cycle, the surface chemistry changes continuously, likely leading to variations in etch rate or surface roughness over time. A 500-cycle run would likely fail to meet tight tolerance specifications due to this cumulative error.\"}]}]","bbox":[{"panel_id":"a","x":17,"y":10,"width":1002,"height":454}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1019,"height":464,"image_format":"jpeg","image_sha256":"fb41ffcfca6c7e138a95a8dc61344badf15f9c5fe833f2bb4c0b49f0e9e415fd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_15_fig_5.jpg","caption":"FIG. 5. Etch per cycle as a function of $\\mathsf{Ar}^+$ ion energy. For the \"High Fluence\" simulation results, one cycle corresponds to $2255\\mathrm{Cl}_2$ impacts and $1000\\mathrm{Ar}^+$ impacts, while for \"Low Fluence,\" one cycle corresponds to $2255\\mathrm{Cl}_2$ impacts and $68\\mathrm{Ar}^+$ impacts. Solid red circles are physical sputtering results from the MD simulations, open red circles are ALE results from the \"High Fluence\" MD simulations, and open red triangles are ALE results from the \"Low Fluence\" MD simulations. Solid blue squares are experimental physical sputtering results, while open blue squares are experimental ALE results, both from Park et al. (Ref. 11). The dotted lines indicate where the supposed ALE window is located from experimental results.","id":"train/atomic-layer-etching/simulation-usecase/15/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/15/fig_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot represents that Atomic Layer Etching produces a much higher EPC than physical sputtering at the same ion energies, demonstrating the advantage of chlorine surface modification. An optimal “ALE window” (~70–90 eV) allows selective removal of the modified layer without damaging bulk silicon, while sufficient ion fluence is essential, as low fluence yields negligible etching despite chlorination. Etch per cycle is shown as a function of Ar⁺ ion energy. For the “High Fluence” simulation results, one cycle corresponds to 2255 Cl₂ impacts and 1000 Ar⁺ impacts, while for “Low Fluence,” one cycle corresponds to 2255 Cl₂ impacts and 68 Ar⁺ impacts. Solid red circles represent physical sputtering results from MD simulations, open red circles represent ALE results from the “High Fluence” MD simulations, and open red triangles represent ALE results from the “Low Fluence” MD simulations. Solid blue squares are experimental physical sputtering results, while open blue squares are experimental ALE results, both from Park et al. (Ref. 11). The dotted lines indicate the experimentally identified ALE window.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ar⁺ Energy (eV) | Etch per Cycle (Å/cycle) | Process / Condition |\\n|-----------------|--------------------------:|---------------------|\\n| 40 | 0.031 | Physical Sputtering (Simulation) |\\n| 40 | 0.458 | ALE (Simulation, High Fluence) |\\n| 40 | 0.181 | ALE (Simulation, Low Fluence) |\\n| 40 | 0 | Physical Sputtering (Experiment) |\\n| 40 | | ALE (Experiment) |\\n| 50 | 0.083 | Physical Sputtering (Simulation) |\\n| 50 | 0.5941 | ALE (Simulation, High Fluence) |\\n| 50 | 0.233 | ALE (Simulation, Low Fluence) |\\n| 50 | 0 | Physical Sputtering (Experiment) |\\n| 50 | | ALE (Experiment) |\\n| 60 | | Physical Sputtering (Simulation) |\\n| 60 | 0.739 | ALE (Simulation, High Fluence) |\\n| 60 | 0.205 | ALE (Simulation, Low Fluence) |\\n| 60 | 0.167 | Physical Sputtering (Experiment) |\\n| 60 | 0.233 | ALE (Experiment) |\\n| 70 | 0.289 | Physical Sputtering (Simulation) |\\n| 70 | 0.894 | ALE (Simulation, High Fluence) |\\n| 70 | | ALE (Simulation, Low Fluence) |\\n| 70 | 0.200 | Physical Sputtering (Experiment) |\\n| 70 | 1.105 | ALE (Experiment) |\\n| 80 | 0.425 | Physical Sputtering (Simulation) |\\n| 80 | 1.020 | ALE (Simulation, High Fluence) |\\n| 80 | | ALE (Simulation, Low Fluence) |\\n| 80 | 0.360 | Physical Sputtering (Experiment) |\\n| 80 | 1.076 | ALE (Experiment) |\\n| 90 | 0.598 | Physical Sputtering (Simulation) |\\n| 90 | 1.175 | ALE (Simulation, High Fluence) |\\n| 90 | | ALE (Simulation, Low Fluence) |\\n| 90 | | Physical Sputtering (Experiment) |\\n| 90 | | ALE (Experiment) |\\n| 100 | 0.763 | Physical Sputtering (Simulation) |\\n| 100 | 1.320 | ALE (Simulation, High Fluence) |\\n| 100 | | ALE (Simulation, Low Fluence) |\\n| 100 | 0.894 | Physical Sputtering (Experiment) |\\n| 100 | 1.316 | ALE (Experiment) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The \\\"Low Fluence\\\" step uses only 68 $Ar^+ impacts, which is mathematically insufficient to cover and clear the surface sites generated by the 2255 Cl₂ impacts.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 100 eV, the selectivity decreases because Physical Sputtering (uncontrolled removal) becomes a dominant fraction of the total etch. Operating at 70 eV maintains a larger gap between the ALE rate and the Sputtering rate (Solid Square is low, ~0.2 Å/cycle). This ensures the etching is primarily driven by chemical modification, not brute-force kinetic damage.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Chlorination weakens the surface binding energy. The adsorption of Chlorine atoms draws electron density away from the silicon-silicon backbonds, lowering the energy threshold required to break them. This allows the same 80 eV ions to remove significantly more material than they could from a pristine, unmodified surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Above the window, the physical sputtering component becomes too high, causing ions to penetrate and damage the underlying lattice even after the chlorinated layer is removed.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":672,"height":461}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":672,"height":461,"image_format":"jpeg","image_sha256":"3a57d83c51a33f658ea076b7ec2e33b7ebb4124c106d1be89463774605e885dd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_15_fig_6.jpg","caption":"FIG. 6. Etch per cycle as a function of irradiation time for $70\\mathrm{eV}\\mathrm{Ar}^+$ ions. Red circles are from MD simulations, while blue squares are experimental results from Park et al. (Ref. 11). For the simulation results, the chlorination step consists of $2255\\mathrm{Cl}_2$ impacts, while for experiments $20\\mathrm{SCCM}$ of $\\mathrm{Cl}_2$ is supplied for $20\\mathrm{s}$ . It is assumed a $30\\mathrm{s}$ ion irradiation time corresponds to $1000$ impacts in the simulation. The dotted line is the experimentally saturated EPC (1.36 Å/cycle).","id":"train/atomic-layer-etching/simulation-usecase/15/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/15/fig_6","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot compares simulated and experimental etch per cycle (EPC) as a function of Ar⁺ ion irradiation time at 70 eV. Both datasets show EPC increasing with time before saturating, with the simulation (red circles) closely matching the trend and saturation value (~1.36 Å/cycle) of the experimental results (blue squares).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ar⁺ Irradiation (s) | Etch per Cycle (Å/cycle) | Source |\\n|--------------------|--------------------------:|-------------|\\n| 8 | 0.49 | Simulation |\\n| 8 | | Experiment |\\n| 10 | | Simulation |\\n| 10 | 0.20 | Experiment |\\n| 15 | 0.62 | Simulation |\\n| 15 | | Experiment |\\n| 20 | | Simulation |\\n| 20 | 0.97 | Experiment |\\n| 30 | 0.89 | Simulation |\\n| 30 | 1.12 | Experiment |\\n| 35 | | Simulation |\\n| 35 | 1.29 | Experiment |\\n| 37 | 1.06 | Simulation |\\n| 37 | | Experiment |\\n| 40 | | Simulation |\\n| 40 | 1.40 | Experiment |\\n| 45 | 1.02 | Simulation |\\n| 45 | 1.35 | Experiment |\\n| 50 | | Simulation |\\n| 50 | 1.37 | Experiment |\\n| 60 | 1.31 | Simulation |\\n| 60 | | Experiment |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Simulate the chlorination step with 2255 Cl₂ impacts.\\n\\n2. Simulate the bombardment step with Ar⁺ ions (70 eV) for a duration corresponding to the target irradiation time.\\n\\n3. Calculate the etch depth by comparing surface positions before and after the simulated cycle.\\nThe correlation (30 s ≈ 1000 impacts) calibrates the simulation's timescale to real-world tool parameters, enabling direct quantitative comparison between the model and physical experiment.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The close agreement validates the model's predictive power for this chemistry. It can rapidly and inexpensively screen irradiation times to identify the saturation point, significantly reducing the number of costly experimental trials needed for initial reactor recipe development.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"EPC increases with irradiation time then saturates. This occurs because the Ar⁺ ions can only remove the finite-thickness chlorinated (Si-Clₓ) layer created in the prior step. Once all the chlorinated material is sputtered away, additional ion bombardment does not increase the etch depth, leading to the observed saturation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies precise depth control is achievable. By running a calculated number of cycles (e.g., ~15 cycles), one can etch to a target depth of ~20 Å with atomic-scale accuracy. The self-limiting, saturating behavior ensures each cycle removes a consistent thickness, which is critical for such a shallow etch.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":8,"width":670,"height":496}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":672,"height":506,"image_format":"jpeg","image_sha256":"444ca98bc4ccb0b32fa1a886272039174d539d9045f72c2fba4b3366ced57161","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_12.jpg","caption":"Fig. 12. The vacuum pressure versus etching per cycle relationship for several substrate velocities.","id":"train/atomic-layer-etching/simulation-usecase/16/fig_12","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_12","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between vacuum pressure (in Pa) and etching per cycle (in Å/cycle) at different speeds (60 mm/s, 90 mm/s, and 120 mm/s).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Vacuum pressure (Pa) | Etching per cycle (Å/cycle) 60mm/s |Etching per cycle (Å/cycle) 90mm/s |Etching per cycle (Å/cycle) 120mm/s |\\n|---|---|---|---|\\n|-200 | 0.37 |0.25|0.13|\\n|-150 | 0.40 |0.30|0.20|\\n|-100 | 0.40 |0.33|0.22|\\n|-50 | 0.40 |0.33|0.26|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the ideal case the vacuum pressure between the sample and the table does not have an influence on the trend. I.e. a straightline should be observed.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that the process gases are pumped away during the dosing, due to the low vacuum pressure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.41 Å/cycle and 0.33 Å/cycle respectively.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Linear increase\"}]}]","bbox":[{"panel_id":"a","x":0,"y":1,"width":662,"height":506}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":661,"height":506,"image_format":"jpeg","image_sha256":"26d167579d142bc49248daa60ef3d50a47e794e27d8de6c9eb63335a9796650c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_17_fig7.jpg","caption":"Fig.7. t t divided wafer in Fig. 2b to the bottom.","id":"train/atomic-layer-etching/simulation-usecase/17/fig7","sample_id":"atomic-layer-etching/simulation-usecase/17/fig7","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"multiple scatter plot"},{"panel_id":"d","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The partial pressure of HF is plotted against substrate position for reactors G0 under different conditions. Each has four different dwell times (1.0 s, 0.3 s, 0.2 s, 0.1 s) represented by different markers.\"},{\"panel_id\":\"b\",\"text\":\"The partial pressure of HF is plotted against substrate position for reactors G1 under different conditions.\"},{\"panel_id\":\"c\",\"text\":\"The partial pressure of HF is plotted against substrate position for reactors G2 under different conditions.\"},{\"panel_id\":\"d\",\"text\":\"The partial pressure of HF is plotted against substrate position for reactors G3 under different conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Substrate Position | 0.1 s | 0.2 s | 0.3 s | 1.0 s |\\n|--------------------|-------|-------|-------|-------|\\n| 1 | 08 | 38 | 58 | 68 |\\n| 2 | 9 | 39 | 59 | 68 |\\n| 3 | 10 | 40 | 60 | 68 |\\n| 4 | 11 | 41 | 61 | 68 |\\n| 5 | 12 | 42 | 62 | 68 |\\n| 6 | 13 | 43 | 62 | 68 |\\n| 7 | 13 | 43 | 62 | 68 |\\n| 8 | 12 | 42 | 62 | 68 |\\n| 9 | 11 | 41 | 61 | 68 |\\n| 10 | 10 | 40 | 60 | 68 |\\n| 11 | 9 | 39 | 59 | 68 |\\n| 12 | 8 | 38 | 58 | 68 |\"},{\"panel_id\":\"b\",\"text\":\"| Substrate Position | 0.1 s | 0.2 s | 0.3 s | 1.0 s |\\n|--------------------|-------|-------|-------|-------|\\n| 1 | 08 | 38 | 58 | 68 |\\n| 2 | 9 | 39 | 59 | 68 |\\n| 3 | 10 | 40 | 60 | 68 |\\n| 4 | 11 | 41 | 61 | 68 |\\n| 5 | 12 | 42 | 62 | 68 |\\n| 6 | 13 | 43 | 62 | 68 |\\n| 7 | 13 | 43 | 62 | 68 |\\n| 8 | 12 | 42 | 62 | 68 |\\n| 9 | 11 | 41 | 61 | 68 |\\n| 10 | 10 | 40 | 60 | 68 |\\n| 11 | 9 | 39 | 59 | 68 |\\n| 12 | 8 | 38 | 58 | 68 |\"},{\"panel_id\":\"c\",\"text\":\"| Substrate Position | 0.1 s | 0.2 s | 0.3 s | 1.0 s |\\n|--------------------|-------|-------|-------|-------|\\n| 1 | 08 | 38 | 58 | 68 |\\n| 2 | 9 | 39 | 59 | 68 |\\n| 3 | 10 | 40 | 60 | 68 |\\n| 4 | 11 | 41 | 61 | 68 |\\n| 5 | 12 | 42 | 62 | 68 |\\n| 6 | 13 | 43 | 62 | 68 |\\n| 7 | 13 | 43 | 62 | 68 |\\n| 8 | 12 | 42 | 62 | 68 |\\n| 9 | 11 | 41 | 61 | 68 |\\n| 10 | 10 | 40 | 60 | 68 |\\n| 11 | 9 | 39 | 59 | 68 |\\n| 12 | 8 | 38 | 58 | 68 |\"},{\"panel_id\":\"d\",\"text\":\"| Substrate Position | 0.1 s | 0.2 s | 0.3 s | 1.0 s |\\n|--------------------|-------|-------|-------|-------|\\n| 1 | 08 | 38 | 58 | 68 |\\n| 2 | 9 | 39 | 59 | 68 |\\n| 3 | 10 | 40 | 60 | 68 |\\n| 4 | 11 | 41 | 61 | 68 |\\n| 5 | 12 | 42 | 62 | 68 |\\n| 6 | 13 | 43 | 62 | 68 |\\n| 7 | 13 | 43 | 62 | 68 |\\n| 8 | 12 | 42 | 62 | 68 |\\n| 9 | 11 | 41 | 61 | 68 |\\n| 10 | 10 | 40 | 60 | 68 |\\n| 11 | 9 | 39 | 59 | 68 |\\n| 12 | 8 | 38 | 58 | 68 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The reactor with the inclined plate (G3) has the most uniform flow pattern at every time step, in which the largest pressure deviation is 2.9 Pa at 0.2 s.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Among G0, G1 and G2, G2 reactor has uniform flow at the shortest time of 0.1s\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For every group (G0–G3), partial pressure increases strongly with longer HF pulse time: 0.1 s < 0.2 s < 0.3 s ≪ 1.0 s.\\nThe 1.0 s trace is near the upper limit (~68–70 Pa) and essentially flat. Across-substrate uniformity: Pressures are lower at the edges and higher near the center, especially at the shorter pulses (0.1–0.3 s). The center‑to‑edge difference is ~4–10 Pa depending on dose and group.\"}]}]","bbox":[{"panel_id":"a","x":10,"y":0,"width":588,"height":399},{"panel_id":"b","x":627,"y":0,"width":584,"height":401},{"panel_id":"c","x":8,"y":472,"width":591,"height":386},{"panel_id":"d","x":624,"y":472,"width":587,"height":389}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/Multiscale computational fluid dynamics modeling of thermal atomic layer etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1222,"height":861,"image_format":"jpeg","image_sha256":"78201347ea2339d9d3d2b954e37f511f78db95d53a42153a7b1d9f0dca9b7062","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_24_fig10.jpg","caption":"Fig.10. Selective etching of TiN at $250^{\\circ}C$ using $\\mathrm{O_3}$ and HF in the presence of other surrounding materials of $\\mathrm{Al}_2\\mathrm{O}_3$ $\\mathrm{HfO_2}$ $\\mathrm{ZrO_2}$ $\\mathrm{SiO_2}$ and $\\mathrm{Si_3N_4}$ . Reproduced from Ref. [20].","id":"train/atomic-layer-etching/simulation-usecase/24/fig10","sample_id":"atomic-layer-etching/simulation-usecase/24/fig10","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the film thickness of different materials (TiN, Al₂O₃, Si₃N₄, HfO₂, ZrO₂, and SiO₂) after 0 to 400 cycles. There is a linear decrease for TiN, while the others show a plateau.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | TiN | Al₂O₃ | Si₃N₄ | HfO₂ | ZrO₂ | SiO₂ |\\n|---|---|---|---|---|---|---|\\n| 0 | 75 | - | 40 | 55 | 50 | 50 |\\n| 100 | 50 | 50 | 40 | 55 | 50 | 50 |\\n| 200 | 35 | 50 | 40 | 55 | 50 | 50 |\\n| 300 | 20 | 48 | 40 | 55 | 50 | 50 |\\n| 400 | - | 42 | 40 | 55 | 50 | 50 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etching of TiN was studied at 250 °C in the presence of other materials such as Al2O3, Si3N4, HfO2, ZrO2, and SiO2, using O2 and HF.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film thickness of TiN decreases from approximately 75 Å to 20 Å as the number of cycles increases from 0 to 400.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiN.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen, the Si3N4 film, shows a slight increase in thickness that could be related to the growth of the material.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":650,"height":501}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/Review Paper -- Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":652,"height":509,"image_format":"jpeg","image_sha256":"0f857608ac03d50912cb75a65bd8a1e68093bc9d4fca8e3a4625459d1505d300","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_24_fig_5.jpg","caption":"Fig. 5. Selective etching of $\\mathrm{Al_2O_3}$ , $\\mathrm{HfO_2}$ , $\\mathrm{ZrO_2}$ , $\\mathrm{SiO_2}$ , $\\mathrm{Si_3N_4}$ , and TiN by the metal ALE using fluorination and ligand-exchange reactions: (a) $\\mathrm{Sn(acac)}_2$ at $200^{\\circ}\\mathrm{C}$ and (b) TMA at $300^{\\circ}\\mathrm{C}$ . Reproduced from Ref. [29].","id":"train/atomic-layer-etching/simulation-usecase/24/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/24/fig_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the changes on the film thickness of various materials (TiN, SiO_2, Si_3N_4, HfO_2, Al_2O_3, ZrO_2) over cycles with Sn(acac)2 at 200 °C.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the changes on the film thickness of various materials (TiN, SiO_2, Si_3N_4, HfO_2, Al_2O_3, ZrO_2) over cycles with TMA at 300 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | TiN | SiO_2 | Si_3N_4 | HfO_2 | Al_2O_3 | ZrO_2 |\\n|---|---|---|---|---|---|---|\\n| 0 | 70 | 50 | 40 | 50 | 48 | 50 | \\n| 100 | 70 | 50 | 40 | 48 | 20 | 40 | \\n| 200 | 70 | 50 | 40 | 45 | 0 | 30 | \\n| 300 | - | - | - | - | - | - | \\n| 400 | 70 | 50 | 40 | 38 | 0 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Cycles | TiN | SiO_2 | Si_3N_4 | HfO_2 | Al_2O_3 | ZrO_2 |\\n|---|---|---|---|---|---|---|\\n| 0 | 70 | 50 | 40 | 50 | 48 | 50 |\\n| 100 | - | - | - | 48 | 20 | 50 | \\n| 200 | - | - | - | 45 | 0 | 53 | \\n| 300 | - | - | - | - | - | - | \\n| 400 | 75 | 48 | 38 | 35 | 0 | 50 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film thickness for TiN remains approximately constant for the ALE cycle with Sn(acac)2, but increases for the ALE cycle with TMA.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film thickness was studied as a function of the number of cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of cycles increases the thickness of the HfO2, ZrO2 and Al2O3 film decreases, but the thickness of the TiN, SiO2 and Si3N4 films remains approximately constant.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the subfigure a, Al2O3 has the lowest film thickness at 100 and 200 cycles. Then, at 300 cycles, both Al2O3 and ZrO3 exhibit a value of 0.\"}]}]","bbox":[{"panel_id":"b","x":631,"y":4,"width":573,"height":463},{"panel_id":"a","x":1,"y":3,"width":621,"height":467}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/Review Paper -- Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1208,"height":472,"image_format":"jpeg","image_sha256":"14a33fd792402c20fc731655ec88d855f475ca813b8fc61bc58cef54a8b1f9a9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_27_fig_10.jpg","caption":"FIG. 10. Atomic percentages of F, O, S, and C at the etched surface from XPS as a function of ALE cycles at $300^{\\circ}\\mathrm{C}$ . Lines are a guide to the eye.","id":"train/atomic-layer-etching/simulation-usecase/27/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/27/fig_10","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the atomic percent of O1s, C1s, F1s, and S2p elements as a function of ALE cycles\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALE Cycles | O1s (at.%) | C1s (at.%) | F1s (at.%) | S2p (at.%) |\\n|---|---|---|---|---|\\n| 0 | 15.5 | 14.3 | 2.0 | 0.0 |\\n| 10 | 10.5 | 5.8 | 5.8 | 2.0 |\\n| 20 | 9.9 | 5.9 | 6.2 | 1.8 |\\n| 30 | 9.0 | 6.3 | 6.0 | 1.7 |\\n| 50 | 9.0 | 6.1 | 5.5 | 2.0 |\\n| 75 | 7.6 | 6.2 | 6.4 | 1.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both oxygen and carbon contamination decrease significantly during ALE processing. Oxygen drops from ~16 at.% to ~8 at.% while carbon decreases from ~14 at.% to ~6 at.%. Most of this reduction occurs within the first 10 ALE cycles, after which the concentrations stabilize. The continued decrease in oxygen with additional cycles reflects removal of the initially oxidized surface layer present on the as-deposited GaN film.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Fluorine increases due to residual fluorination from the SF6 plasma half-cycle used in the ALE process.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The sulfur content remains below 2 at.% throughout the ALE process, indicating minimal S incorporation from the SF6 plasma.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 6 at.%.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":4,"width":674,"height":516}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":523,"image_format":"jpeg","image_sha256":"7d4203d2e3fc71c45b8db07875f185d4938aca0c30b59898cbbec80ccec72bea","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_27_fig_5.jpg","caption":"FIG. 5. Saturation curves at 150 and $300^{\\circ}\\mathrm{C}$ for (a) $\\mathrm{SF}_6$ plasma exposure using $10\\times 100\\mathrm{ms}$ TMA exposures and (b) varied number of $100\\mathrm{ms}$ TMA pulses with a $10\\mathrm{s}$ $\\mathrm{SF}_6$ plasma step, determined over 30 ALE cycles. Lines are guides for the eye.","id":"train/atomic-layer-etching/simulation-usecase/27/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/27/fig_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Saturation curve for the SF6 plasma half-cycle showing EPC vs. plasma exposure time at 150°C and 300°C. Both temperatures show rapid initial increase followed by soft-saturation, reaching ~0.31 nm/cycle at 150°C and ~0.40 nm/cycle at 300°C after 10 s exposure.\"},{\"panel_id\":\"b\",\"text\":\"Saturation curve for the TMA half-cycle showing EPC vs. number of TMA pulses at 150°C and 300°C. Clear saturation is achieved at 300°C with 4 pulses (~0.40 nm/cycle), while 150°C requires more pulses to reach saturation (~0.31 nm/cycle).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| SF₆ plasma time (s) | 300°C (nm/cycle) | 150°C (nm/cycle) |\\n|---|---|---|\\n| 0 | 0.00 | 0.00 |\\n| 1 | 0.26 | - |\\n| 2 | 0.33 | 0.16 |\\n| 5 | 0.38 | 0.27 |\\n| 10 | 0.40 | 0.31 |\\n| 15 | 0.40 | 0.32 |\\n| 30 | 0.42 | 0.35 |\"},{\"panel_id\":\"b\",\"text\":\"| TMA pulses | 300°C (nm/cycle) | 150°C (nm/cycle) |\\n|---|---|---|\\n| 0 | 0.00 | 0.00 |\\n| 1 | -0.01 | - |\\n| 2 | 0.39 | 0.02 |\\n| 3 | 0.40 | - |\\n| 4 | 0.40 | 0.27 |\\n| 5 | 0.40 | 0.25 |\\n| 6 | - | 0.31 |\\n| 7 | 0.40 | - |\\n| 10 | 0.40 | 0.31 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Lower temperature inhibits fluorine diffusion into the GaN, resulting in a thinner fluorinated layer and thus a lower EPC.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10 s was chosen because the EPC increases by only 0.02 nm/cycle when extending to 30 s, which is within experimental error.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.40 ± 0.02 nm/cycle.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SF6 plasma step shows soft-saturation with a gradual increase in EPC even at longer exposure times, attributed to diffusion-limited fluorination following Deal-Grove kinetics. The TMA step shows clear, sharp saturation once sufficient pulses are provided. This difference reflects the distinct mechanisms: diffusion-controlled surface modification for fluorination vs. self-limiting ligand-exchange reactions for TMA.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":5,"width":369,"height":491},{"panel_id":"b","x":380,"y":16,"width":291,"height":481}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":497,"image_format":"jpeg","image_sha256":"1e113ad972d50cdcbb71c899949dd8438e8817b409c65ad77c1e2e150dd82304","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_27_fig_7.jpg","caption":"FIG. 7. GaN EPC as a function of table temperature. Data for $\\mathrm{Al}_2\\mathrm{O}_3$ ALE using the same $\\mathrm{SF}_6$ plasma/TMA chemistry are shown from our previous work. Thermal GaN ALE with $\\mathrm{XeF}_2 / \\mathrm{BCl}_3$ is also included in the plot. Lines are guides to the eye.","id":"train/atomic-layer-etching/simulation-usecase/27/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/27/fig_7","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the EPC (nm/cycle) of Plasma ALE GaN, Plasma ALE Al₂O₃, and Thermal ALE GaN at various temperatures. The data points are connected by lines, indicating trends over temperature\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Plasma ALE GaN (nm/cycle) | Plasma ALE Al₂O₃ (nm/cycle) | Thermal ALE GaN (nm/cycle) |\\n|---|---|---|---|\\n| 100 | -0.01 | - | - |\\n| 125 | 0.21 | - | - |\\n| 150 | 0.33 | - | - |\\n| 170 | - | - | 0.02 |\\n| 175 | 0.35 | -0.01 | - |\\n| 185 | - | - | 0.03 |\\n| 200 | 0.36 | 0.02 | 0.05 |\\n| 225 | 0.37 | 0.08 | - |\\n| 250 | 0.39 | 0.21 | 0.06 |\\n| 275 | 0.40 | 0.27 | - |\\n| 300 | 0.43 | 0.29 | 0.07 |\\n| 325 | - | 0.30 | - |\\n| 350 | - | 0.31 | - |\\n| 375 | - | 0.34 | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Plasma ALE provides significantly higher etch rates (0.31-0.43 nm/cycle vs. ~0.07 nm/cycle for thermal ALE) and operates over a wider temperature range. This is attributed to the higher reactivity of fluorine radicals compared to thermal XeF2, enabling more effective fluorination of the GaN surface. The wider temperature window also provides greater process flexibility.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 150 and 200°C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"AlF3 ALD growth dominates over the ALE reaction, resulting in net film deposition instead of etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It increases linearly with temperature from 0.31 nm/cycle at 150°C to 0.43 nm/cycle at 300°C.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":5,"width":663,"height":544}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":666,"height":552,"image_format":"jpeg","image_sha256":"67ca83bd80303cdca4119a15ca5d627dc21e8757ed79517f3c28976757f7663b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_32_fig_5.jpg","caption":"FIG. 5. The reaction energy variations (a) and the maximum reaction energies (b) obtained from the sequential etching events of routes 1-3.","id":"train/atomic-layer-etching/simulation-usecase/32/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/32/fig_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the energy changes at various reaction steps for three routes (Route 1, Route 2, and Route 3). Each route shows a distinct trend in energy increase.\"},{\"panel_id\":\"b\",\"text\":\"The bar chart compares the maximum energy achieved by three routes (Route 1, Route 2, and Route 3). Route 3 has the highest maximum energy\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | Route 1 (eV) | Route 2 (eV) | Route 3 (eV) |\\n|---|---|---|---|\\n| 0 | 0.0 | 0.0 | 0.0 |\\n| 1 | 5.4 | 4.0 | 13.0 |\\n| 2 | 7.8 | 11.5 | 11.0 |\\n| 3 | 10.8 | 13.5 | 22.0 |\\n| 4 | - | 20.5 | 29.0 |\\n| 5 | - | 22.5 | 34.0 |\"},{\"panel_id\":\"b\",\"text\":\"| Route | Maximum Energy (eV) |\\n|---|---|\\n| Route 1 | 5.4 |\\n| Route 2 | 7.3 |\\n| Route 3 | 12.9 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Route 1 uses squares, Route 2 uses circles, Route 3 uses triangles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They denote the surface moiety or atom removed at that etching event in the sequence for each route.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Route 3 has the highest maximum reaction energy.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Routes 1 and 2 represent ALET on a BCl3 adsorbed surface and have much lower maximum reaction energies than route 3, which represents conventional plasma etching of pristine Al2O3. This supports the paper’s conclusion that BCl3 presorption reduces the energetic requirement for etching, which in turn can reduce the required Ar kinetic energy for effective removal. The authors also note that changing the etching event sequence can raise the maximum energy toward the conventional plasma etching level, so sequence control matters.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":606,"height":423},{"panel_id":"b","x":96,"y":435,"width":421,"height":387}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/32/Understanding time-resolved processes in atomic-layer etching of ultra-thin Al2O3 film.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":609,"height":825,"image_format":"jpeg","image_sha256":"d49a97aac60869c5ac255f91ba8ba448bb51b250a6d509a1acad1bb4227af237","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_2bf83ee5d0350bda7054684c907c864234acb978fe3ffba9b23eba42a75a8833.jpg","caption":"(a)","id":"train/atomic-layer-etching/simulation-usecase/33/2bf83ee5d0350bda7054684c907c864234acb978fe3ffba9b23eba42a75a8833","sample_id":"atomic-layer-etching/simulation-usecase/33/2bf83ee5d0350bda7054684c907c864234acb978fe3ffba9b23eba42a75a8833","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure depicts the evolution of surface-bound species on silicon under increasing HF (hydrofluoric acid) dose, showing the number density per square nanometer (Nᵢ) for unfluorinated Si and various fluorinated forms: SiF, SiF₂, and SiF₃. Initially, the surface is composed entirely of unfluorinated Si species (~28 nm⁻²), but with increasing HF exposure, the density of fluorinated species grows. SiF appears first, followed by SiF₂ and SiF₃, suggesting a stepwise fluorination mechanism. The density of each fluorinated species eventually saturates, while the total Si-related surface density remains roughly constant, indicating that fluorination modifies the surface rather than etching it away.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Dose (HF/nm²) | Si (nm⁻²) | SiF (nm⁻²) | SiF₂ (nm⁻²) | SiF₃ (nm⁻²) |\\n|---------------|-----------|------------|-------------|-------------|\\n| 0 | 28 | 0 | 0 | 0 |\\n| 50 | 26 | 5 | 3 | 2 |\\n| 100 | 26 | 7 | 4 | 3 |\\n| 150 | 26 | 8 | 4 | 3 |\\n| 200 | 26 | 8 | 4 | 3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the HF dose increases, the number density of unfluorinated surface Si atoms decreases, while the densities of fluorinated species (SiF, SiF₂, and SiF₃) increase. The total surface species density remains approximately constant, suggesting a substitutional process where fluorine atoms progressively bond with silicon to form higher fluorinated states. SiF forms first and dominates at lower doses, followed by SiF₂ and SiF₃, which appear and saturate at higher doses\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiF.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Surface fluorination proceeds in a stepwise manner, Si to SiF to SiF₂ to SiF₃, SiF is dominant at low HF doses, SiF₂ and SiF₃ emerge and saturate later\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":295,"height":222}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/2bf83ee5d0350bda7054684c907c864234acb978fe3ffba9b23eba42a75a8833.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/2bf83ee5d0350bda7054684c907c864234acb978fe3ffba9b23eba42a75a8833.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":295,"height":222,"image_format":"jpeg","image_sha256":"93e8bdd52c6f7573ed91a82727623170b483a917d47054fa6fe48bca72966ecb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_figure_12.jpg","caption":"Figure 12. Evolution of populations of surface species $(N_{i})$ in the modified layer as a function of HF dose. The solid lines are the results of 1D continuum model while symbols are directly obtained from MD simulations with $E_{\\mathrm{in}}$ of $50~\\mathrm{eV}$ and $\\theta_{\\mathrm{in}}$ of $0^{\\circ}$ . Panel (a) depicts the population change of silicon fluoride species, namely $\\mathrm{SiF_0}$ , $\\mathrm{SiF_1}$ , $\\mathrm{SiF_2}$ , and $\\mathrm{SiF_3}$ . Panel (b) illustrates the changes in ammonia-derived species, specifically $\\mathrm{NH_0}$ , $\\mathrm{NH_1}$ , and $\\mathrm{NH_2}$ . Panel (c) presents the ratio of N to Si, with the dashed line indicating the bulk stoichiometry of 1.33. (b) (c)","id":"train/atomic-layer-etching/simulation-usecase/33/figure_12","sample_id":"atomic-layer-etching/simulation-usecase/33/figure_12","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure plots the evolution of various nitrogen-containing surface species as a function of HF dose, measured in molecules per square nanometer (Nᵢ, nm⁻²). The total nitrogen concentration (N) initially drops with HF exposure, suggesting removal or conversion, but then stabilizes around 30 nm⁻². NH₀ (neutral nitrogen) shows a slight decline, while NH₁ and NH₂ exhibit clear increasing trends. This suggests that as HF dose increases, nitrogen becomes increasingly hydrogenated, forming amine-like species. The saturation of NH₁ and NH₂ levels beyond ~100 HF/nm² implies a steady-state surface composition. The figure highlights the chemical evolution of surface-bound nitrogen species during HF exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Dose (HF/nm²) | N (nm⁻²) | NH₀ (nm⁻²) | NH₁ (nm⁻²) | NH₂ (nm⁻²) |\\n|---------------|-----------|-------------|-------------|-------------|\\n| 0 | 35 | 10 | 0 | 0 |\\n| 50 | 30 | 8 | 5 | 2 |\\n| 100 | 28 | 7 | 7 | 3 |\\n| 150 | 30 | 7 | 9 | 4 |\\n| 200 | 32 | 8 | 9 | 5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure shows that atomic nitrogen (N) initially decreases in surface concentration with increasing HF dose but then plateaus, indicating partial consumption or transformation. In contrast, NH₁ and NH₂ species increase steadily with dose, suggesting progressive hydrogenation of nitrogen as HF exposure continues. NH₀ decreases slightly over time. These trends point to a surface reaction pathway where nitrogen becomes increasingly substituted with hydrogen, possibly due to HF-mediated surface reactions leading to NHₓ termination.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"NH₁.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"HF exposure hydrogenates nitrogen , Atomic nitrogen partially converts to NH₁ and NH₂ species, Surface nitrogen composition stabilizes beyond ~100 HF/nm².\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":298,"height":225}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":298,"height":225,"image_format":"jpeg","image_sha256":"bec9ee4d32b85c2e0d83cc5cb1122ac0c9bd7d4039f2421cc721c583e841908d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_12.jpg","caption":"FIG. 12. Normalized atomic Si counts as a function of $\\mathsf{Ar}^+$ fluence for various $\\mathsf{Ar}^+$ energies. Subfigure (a) shows the results for OES experiments (using the modified OES Si signals) and subfigure (b) shows results from MD ALE simulations. For both the OES and MD results, the counts are normalized using the value at the plateau observed at $80 \\text{eV}$ .","id":"train/atomic-layer-etching/simulation-usecase/6/fig_12","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_12","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Panel (a) shows experimental measurements of Si count as a function of Ar⁺ ion dosage for three incident energies. The Si signal is consistently highest at 215 eV and increases with dosage before saturating, while the 80 eV signal shows a moderate rise and 45 eV shows negligible counts.\"},{\"panel_id\":\"b\",\"text\":\"Panel (b) presents Monte Carlo simulation results for the same ion energies and dosages. The simulated Si counts for 215 eV also show a plateauing behavior at higher dosages, though with more fluctuations and slightly different relative magnitudes compared to the experimental data\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion Dosage (Ar⁺/cm²) × 10¹⁵ | 45 eV | 80 eV | 215 eV |\\n|----------------------------|-------|-------|--------|\\n| 0 | 0 | 0 | 2 |\\n| 10 | 0 | 0.5 | 4 |\\n| 20 | 0 | 1 | 5 |\\n| 30 | 0 | 1.5 | 6 |\\n| 40 | 0 | 2 | 7 |\\n| 50 | 0 | 2.5 | 8 |\"},{\"panel_id\":\"b\",\"text\":\"| Ion Dosage (Ar⁺/cm²) × 10¹⁵ | 45 eV | 80 eV | 215 eV |\\n|----------------------------|-------|-------|--------|\\n| 0 | 5 | 0.5 | 6 |\\n| 10 | 6 | 1 | 7 |\\n| 20 | 7 | 1.5 | 8 |\\n| 30 | 6 | 2 | 7 |\\n| 40 | 7 | 2.5 | 6 |\\n| 50 | 6 | 3 | 6 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"215 eV\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"More fluctuation in simulation, Clearer plateau in experiment, Smoother experimental curves with simulation error bars\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"between experiment and simulation allows researchers to validate modeling accuracy and adjust physical parameters like ion energy and dose for surface processing. Since 215 eV consistently leads to higher and saturating Si counts, this suggests it may be the most effective energy for maximising surface modification efficiency.\"}]}]","bbox":[{"panel_id":"a","x":8,"y":2,"width":679,"height":458},{"panel_id":"b","x":721,"y":3,"width":687,"height":457}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1409,"height":461,"image_format":"jpeg","image_sha256":"439d19372330cea38a84c74679b08c5ad0c1abf44dd3695599bf2d8a19bd3818","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_13.jpg","caption":"FIG. 13. Normalized SiCl counts as a function of $\\mathsf{Ar}^+$ fluence for various $\\mathsf{Ar}^+$ energies. Subfigure (a) shows the results for OES experiments and subfigure (b) shows results from MD ALE simulations. For both the OES and MD results, the counts are normalized using the value at the peak observed at $80 \\text{eV}$ .","id":"train/atomic-layer-etching/simulation-usecase/6/fig_13","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_13","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The pair of scatter plots show the experimental (left) and MD-simulated (right) SiCl count as a function of Ar⁺ ion dosage for three ion energies: 45 eV, 80 eV, and 215 eV. In both cases, the SiCl count decreases with increasing dosage, with the highest initial counts observed at 215 eV. The simulation matches the trend seen experimentally, though the absolute counts differ. Error bars are shown for each data point\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion Dosage (Ar+/cm2) × 1015 | 45 eV | 80 eV | 215 eV |\\n|---|---|---|---|\\n| 0 | 0.75 | 0.90 | 1.60 |\\n| 5 | 0.60 | 0.70 | 0.80 |\\n| 10 | 0.55 | 0.60 | 0.70 |\\n| 15 | 0.50 | 0.55 | 0.60 |\\n| 20 | 0.45 | 0.50 | 0.55 |\\n| 25 | 0.40 | 0.45 | 0.50 |\\n| 30 | 0.35 | 0.40 | 0.45 |\\n| 35 | 0.30 | 0.35 | 0.40 |\\n| 40 | 0.25 | 0.30 | 0.35 |\\n| 45 | 0.20 | 0.25 | 0.30 |\\n| 50 | 0.15 | 0.20 | 0.25 |\"},{\"panel_id\":\"b\",\"text\":\"| Ion Dosage (Ar+/cm2) × 1015 | 45 eV | 80 eV | 215 eV |\\n|---|---|---|---|\\n| 0 | 1.80 | 1.00 | 1.70 |\\n| 5 | 0.50 | 0.40 | 0.30 |\\n| 10 | 0.30 | 0.25 | 0.20 |\\n| 15 | 0.20 | 0.15 | 0.10 |\\n| 20 | 0.15 | 0.10 | 0.05 |\\n| 25 | 0.10 | 0.05 | 0.02 |\\n| 30 | 0.05 | 0.02 | 0.01 |\\n| 35 | 0.02 | 0.01 | 0.00 |\\n| 40 | 0.01 | 0.00 | 0.00 |\\n| 45 | 0.00 | 0.00 | 0.00 |\\n| 50 | 0.00 | 0.00 | 0.00 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ion dosage (Ar⁺/cm² × 10¹⁵), Ion energy (45 eV, 80 eV, 215 eV), Simulation vs. experimental conditions\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"215 eV\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reduction in SiCl count with increasing ion dosage suggests a depletion of reactive surface species over time, which can lead to reduced etch efficiency or modification effectiveness during plasma processing. This implies that optimising ion energy and controlling dosage are crucial for sustaining high etch rates or achieving consistent surface functionalistion, especially in processes where product formation (like SiCl) is critical for chemical transport or material removal.\"}]}]","bbox":[{"panel_id":"a","x":10,"y":10,"width":682,"height":448},{"panel_id":"b","x":725,"y":10,"width":686,"height":448}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1411,"height":458,"image_format":"jpeg","image_sha256":"71675471e5b0aa7813bf2f4b7d1241db9155b047e40e258cd3a1ada3b0030d18","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_14.jpg","caption":"FIG. 14. Normalized $\\mathrm{SiCl}_2$ counts as a function of $\\mathsf{Ar}^+$ fluence for various $\\mathsf{Ar}^+$ energies. Subfigure (a) shows the results for OES experiments and subfigure (b) shows results from MD ALE simulations. For both the OES and MD results, the counts are normalized using the value at the peak observed at $80\\mathrm{eV}$","id":"train/atomic-layer-etching/simulation-usecase/6/fig_14","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_14","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The experimental scatter plot shows that the SiCl₂ count decreases as ion dosage increases for all energy levels (45 eV, 80 eV, 215 eV). The highest counts are seen at 215 eV, while the lowest are at 45 eV. After ~30×10¹⁵ Ar⁺/cm², the counts plateau, indicating a saturation or steady-state regime.\"},{\"panel_id\":\"b\",\"text\":\"The MD simulation panel reflects a similar trend to the experiment: initial steep decrease in SiCl₂ count, more prominent at higher energies. Notably, the simulated values begin at a slightly higher range than experimental values and converge more rapidly with dosage\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion Dosage (Ar⁺/cm²) × 10¹⁵ | 45 eV | 80 eV | 215 eV |\\n|-----------------------------|--------|--------|---------|\\n| 0 | 1.2 | 1.4 | 1.6 |\\n| 5 | 0.9 | 1.1 | 1.3 |\\n| 10 | 0.7 | 0.9 | 1.1 |\\n| ... | ... | ... | ... |\"},{\"panel_id\":\"b\",\"text\":\"| Ion Dosage (Ar⁺/cm²) × 10¹⁵ | 45 eV | 80 eV | 215 eV |\\n|-----------------------------|--------|--------|---------|\\n| 0 | 1.30 | 1.75 | 2.1 |\\n| 5 | 0.80 | 1.20 | 1.4 |\\n| 10 | 0.55 | 0.85 | 1.0 |\\n| 15 | 0.45 | 0.70 | 0.85 |\\n| 20 | 0.40 | 0.60 | 0.78 |\\n| 25 | 0.35 | 0.55 | 0.72 |\\n| 30 | 0.30 | 0.50 | 0.65 |\\n| 35 | 0.28 | 0.48 | 0.60 |\\n| 40 | 0.27 | 0.46 | 0.58 |\\n| 45 | 0.26 | 0.45 | 0.56 |\\n| 50 | 0.25 | 0.45 | 0.55 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ion energy transfer, Surface atom displacement, SiCl₂ formation and ejection, Yield reduction with dose\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In both experimental and simulated datasets, the SiCl₂ count decreases with increasing ion dosage for all ion energies. The rate of decrease is steepest between 0 and 15×10¹⁵ Ar⁺/cm², after which the counts stabilize, indicating a saturation effect. Higher ion energies (e.g., 215 eV) consistently produce more SiCl₂ than lower energies like 45 eV, reflecting enhanced sputtering or reaction yields under more energetic conditions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"215 eV\"}]}]","bbox":[{"panel_id":"a","x":9,"y":10,"width":683,"height":451},{"panel_id":"b","x":725,"y":9,"width":684,"height":452}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":1409,"height":461,"image_format":"jpeg","image_sha256":"ee1cace633e6b9d3fe928416e7fe4aade6bf506addaa6f6803854fd65d45fb11","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_8.jpg","caption":"FIG. 8. Etch per cycle (EPC) in units of nm/cycle for experiments (black squares) and MD simulations (red triangles) as a function of $\\mathsf{Ar}^+$ energy. Error bars represent $95\\%$ confidence intervals.","id":"train/atomic-layer-etching/simulation-usecase/6/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_8","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot compares the EPC (etching per cycle) values measured experimentally and via MD simulations across a range of ion energies. Both datasets exhibit a positive correlation between ion energy and EPC, indicating that higher ion energies lead to more effective etching. However, the experimental EPC values increase more rapidly and reach higher maximum values than those predicted by MD simulations. This suggests that simulations may underestimate etch rates due to idealised conditions, or that experimental conditions involve synergistic effects not captured in the model. The discrepancy becomes more pronounced above ~100 eV, highlighting the importance of validating simulations against experimental benchmarks\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion Energy (eV) | EPC (Experiments, nm/cycle) | EPC (MD Simulations, nm/cycle) |\\n|-----------------|-----------------------------|---------------------------------|\\n| 0 | 0.0 | 0.0 |\\n| 25 | 0.3 | 0.1 |\\n| 50 | 0.6 | 0.2 |\\n| 75 | 1.2 | 0.6 |\\n| 100 | 2.2 | 1.2 |\\n| 125 | 3.2 | 1.8 |\\n| 150 | 4.3 | 2.2 |\\n| 175 | 5.5 | 2.6 |\\n| 200 | 6.4 | 3.0 |\\n| 225 | 7.0 | 3.4 |\\n| 250 | 7.5 | 3.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both experimental and simulation results show increasing EPC with rising ion energy, indicating enhanced etching efficiency. However, the experimental data consistently show higher EPC values than the simulations, especially beyond 100 eV. This suggests either additional synergistic effects in the experiment or limitations in the simulation model, such as neglect of secondary ion effects or surface roughness.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 100 eV\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Higher momentum transfer, Increased sputtering yield, Enhanced bond breaking, Deeper penetration for bulk removal.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":541,"height":406}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":541,"height":406,"image_format":"jpeg","image_sha256":"ef965570706f3f426f8d50c050d0f7c76aedd7bf6ba623ebdf0504a6399feec2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_8_fig_10.jpg","caption":"FIG. 10. Atomic percentages of F, O, S, and C at the etched surface from XPS as a function of ALE cycles at $300^{\\circ}\\mathrm{C}$ . Lines are a guide to the eye.","id":"train/atomic-layer-etching/simulation-usecase/8/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/8/fig_10","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the atomic percent of O1s, C1s, F1s, and S2p elements as a function of ALE cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALE cycles | O1s | C1s | F1s | S2p |\\n|---|---|---|---|---|\\n| 0 | 15 | 14 | 2 | 0 |\\n| 10 | 10 | 6 | 6 | 2 |\\n| 20 | 10 | 6 | 6 | 2 |\\n| 30 | 9 | 6 | 6 | 2 |\\n| 50 | 9 | 6 | 6 | 2 |\\n| 70 | 8 | 6 | 6 | 2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ALE process removes oxygen and carbon species.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The atomic percentage together do not add up till 100%, this means that there are more species in the film not in the graph.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"30 ALE cycles are required.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is likely that gases such as SF6 are used which remain in the film.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":666,"height":517}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/Isotropic atomic layer etching of GaN using SF6 plasma and AI(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":672,"height":523,"image_format":"jpeg","image_sha256":"7d4203d2e3fc71c45b8db07875f185d4938aca0c30b59898cbbec80ccec72bea","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_8_fig_3.jpg","caption":"FIG. 3. (a) Contributions of Ga-O and Ga-N to the Ga3d peak area plotted as a function of sputter depth. The vertical dashed line indicates the spectra shown in (b). (b) The Ga3d signal after $20\\mathrm{s}$ of sputtering, highlighting the positions of the Ga-O and the Ga-N peaks at $20.5$ and $19.3\\mathrm{eV}$ , respectively.","id":"train/atomic-layer-etching/simulation-usecase/8/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/8/fig_3","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the peak area of XPS signals for Ga-N and Ga-O as a function of sputter depth.\"},{\"panel_id\":\"b\",\"text\":\"The spectrum displays the XPS counts at various binding energies for Ga-N and Ga-O.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sputter depth (nm)| Peak area (CPS eV) Ga-O| Peak area (CPS eV) Ga-N|\\n|---|---|---|\\n| 0 | 4000 |0|\\n|5|1300|4500|\\n|10|1000|5000|\\n|15|1000|5000|\\n|20|1000|5000|\\n|25|0|5700|\\n|30|0|6000|\\n|35|0|5700|\\n|40|0|500|\"},{\"panel_id\":\"b\",\"text\":\"| Binding energy (eV) | XPS counts (a.u.) |\\n|---|---|\\n| 14 | 0 |\\n| 16 | 0 |\\n| 18 | 0.3 |\\n| 20 | 2 |\\n| 22 | 0.3 |\\n| 24 | 0 |\\n| 26 | 0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The envelope, which is a result of the two contributions together does not fully overlap with the measured spectrum indicating that the fit is not fully accurate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Nitrogen is more present, at least in the form where it is bonded to gallium.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"From 25 nm and deeper.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Depth profiles with XPS are known to influence material properties. During the sputtering binding states can change and shift, so it is possible that the film has been altered due to the measurement.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":12,"width":346,"height":427},{"panel_id":"b","x":384,"y":12,"width":282,"height":427}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/Isotropic atomic layer etching of GaN using SF6 plasma and AI(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":666,"height":439,"image_format":"jpeg","image_sha256":"0fbb2af112ef01912077536debaaf5db30ba88d38524a44e12689328bc495902","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_8_fig_5.jpg","caption":"FIG. 5. Saturation curves at 150 and $300^{\\circ}\\mathrm{C}$ for (a) $\\mathrm{SF}_6$ plasma exposure using $10\\times 100\\mathrm{ms}$ TMA exposures and (b) varied number of $100\\mathrm{ms}$ TMA pulses with a $10\\mathrm{s}$ $\\mathrm{SF}_6$ plasma step, determined over 30 ALE cycles. Lines are guides for the eye.","id":"train/atomic-layer-etching/simulation-usecase/8/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/8/fig_5","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between SF₆ plasma time and EPC (nm/cycle) at two temperatures, 300°C and 150°C.\"},{\"panel_id\":\"b\",\"text\":\"The line chart illustrates the relationship between TMA pulses and EPC (nm/cycle) at two temperatures, 300°C and 150°C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| SF₆ plasma time (s) | EPC (nm/cycle) 300 degrees |EPC (nm/cycle) 150 degrees |\\n|---|---|---|\\n| 0 | 0.0 |0.0|\\n| 5 | 0.37 |0.27|\\n| 10 | 0.4 |0.3|\\n| 15 | 0.41 |0.31|\\n| 30 | 0.41 |0.35|\"},{\"panel_id\":\"b\",\"text\":\"| TMA pulses | EPC (nm/cycle) 300 degrees |EPC (nm/cycle) 150 degrees |\\n|---|---|---|\\n| 0 | 0.4 |0.0|\\n| 2 | 0.4 |0.05|\\n| 4 | 0.4 |0.25|\\n| 6 | 0.4 |0.31|\\n| 10 | 0.4 |0.31|\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The main physical parameter that is changed upon increasing the number of TMA pulses which is the partial pressure of TMA. Increasing this will increase the reaction possibility.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The maximum EPC is 0.31 nm/cycle.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that the penetration depth of the radical species increases for increasing temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There is no straight line for increasing plasma time, this looks like soft-saturation.\"}]}]","bbox":[{"panel_id":"b","x":387,"y":4,"width":284,"height":491},{"panel_id":"a","x":1,"y":4,"width":371,"height":491}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/Isotropic atomic layer etching of GaN using SF6 plasma and AI(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":672,"height":497,"image_format":"jpeg","image_sha256":"1e113ad972d50cdcbb71c899949dd8438e8817b409c65ad77c1e2e150dd82304","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_8_fig_7.jpg","caption":"FIG. 7. GaN EPC as a function of table temperature. Data for $\\mathrm{Al}_2\\mathrm{O}_3$ ALE using the same $\\mathrm{SF}_6$ plasma/TMA chemistry are shown from our previous work. Thermal GaN ALE with $\\mathrm{XeF}_2 / \\mathrm{BCl}_3$ is also included in the plot. Lines are guides to the eye.","id":"train/atomic-layer-etching/simulation-usecase/8/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/8/fig_7","subset":"multiple-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the EPC (nm/cycle) of Plasma ALE GaN, Plasma ALE Al₂O₃, and Thermal ALE GaN at various temperatures. The data points are connected by lines, indicating trends over temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Plasma ALE GaN | Plasma ALE Al₂O₃ | Thermal ALE GaN |\\n|-----------------|----------------|------------------|----------------|\\n| 100 | 0.0 | 0.0 | 0.0 |\\n| 150 | 0.2 | 0.0 | 0.0 |\\n| 200 | 0.3 | 0.0 | 0.05 |\\n| 250 | 0.4 | 0.2 | 0.1 |\\n| 300 | 0.4 | 0.3 | 0.1 |\\n| 350 | 0.4 | 0.3 | 0.1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes there is a selectivity window between 100 and 175 degrees celcius, so GaN can be etched selectively wrt Al2O3.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plasma process yields way higher etch per cycle for lower temperatures.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increase the temperature when etching Al2O3 instead of GaN.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"375 degrees would yield the highest EPC.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":4,"width":659,"height":547}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/Isotropic atomic layer etching of GaN using SF6 plasma and AI(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":666,"height":552,"image_format":"jpeg","image_sha256":"67ca83bd80303cdca4119a15ca5d627dc21e8757ed79517f3c28976757f7663b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/multiple-scatter-plot/validation/metadata.jsonl b/subsets/multiple-scatter-plot/validation/metadata.jsonl index 9d90982220cdd101dcfd426a3a5846249efae41b..377544b05d120483dbf74845aedf6e2918cbcfff 100644 --- a/subsets/multiple-scatter-plot/validation/metadata.jsonl +++ b/subsets/multiple-scatter-plot/validation/metadata.jsonl @@ -1,11 +1,11 @@ -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_11_fig_3.jpg","caption":"Fig. 3. Fluorine content between 225 and $400^{\\circ}\\mathrm{C}$ .","id":"validation/atomic-layer-deposition/experimental-usecase/11/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/11/fig_3","subset":"multiple-scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/K.-E. Elers et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":539,"height":322,"image_format":"jpeg","image_sha256":"44edf15ab02ff9882089e71f1f9a00dfe4295da9c560da0f1ec37097756e4289","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":539,"height":332}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents fluorine (F) and oxygen (O) atomic concentrations measured in WNₓCᵧ films across deposition temperatures from ~225°C to 400°C. Fluorine remains consistently low (<2 at.%), reaching its minimum near 300–350°C, while oxygen remains higher (3–5 at.%), largely from post-deposition air exposure. The trends highlight the temperature region where impurity control is optimal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition Temperature (°C)|O Content (at-%)|F Content (at-%)|\\n|----------------------------|----------------|----------------|\\n|~225|~4.8|~1.2|\\n|~250|~4.5|~1.0|\\n|~275|~5.2|~0.2|\\n|~300|~4.0|~0.0|\\n|~325|~3.5|~0.8|\\n|~350|~2.5–3.0|~0.2|\\n|~375|~3.2|~0.7|\\n|~400|~3.8|~1.0|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lower fluorine levels indicate more effective ligand removal and better reduction chemistry, which leads to denser, lower-resistivity films with improved electrical and chemical stability. Since fluorine can negatively affect conductivity and barrier integrity, achieving near-zero F content at 300–350°C enhances the film’s suitability for use in advanced interconnect structures where purity and stability are critical.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Oxygen remains relatively high (4–5 at.%) at all temperatures, while fluorine drops from around 1.0–1.2 at.% at low temperatures to nearly 0 at mid-range temperatures.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, impurity concentrations change with temperature, with fluorine decreasing significantly at optimal ALD temperatures.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Low fluorine concentration, Moderate but stable oxygen levels, Temperature-dependent impurity removal, Evidence of an ALD window around 300–350°C\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG3_a.jpg","caption":"(a)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG3_a","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG3_a","subset":"multiple-scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG3_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG3_a.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":619,"height":519,"image_format":"jpeg","image_sha256":"0e2f8bf841ee675d96257227cba1c4ff91d90b7c83bb46b97b86bc55239ed1ab","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":615,"height":512}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot compares NiO film thickness versus ALD cycle number for three Ni precursors. NiO_Alanis and NiO_MeCp track each other closely and show near-linear growth up to ~400 cycles, reaching ~10.8–10.9 nm. NiO_Bu-MeAMD grows faster (steeper slope), reaching ~9.8 nm by ~250 cycles (and the series does not extend beyond that range in this panel). Overall, the main message is the growth-per-cycle difference among precursors, with Bu-MeAMD giving higher thickness at fewer cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of cycles | NiO_Alanis (nm) | NiO_MeCp (nm) | NiO_Bu-MeAMD (nm) |\\n|---|---|---|---|\\n| 0 | 0.0 | 0.0 | 0.0 |\\n| 50 | ~1.2 | ~1.3 | ~0.7 |\\n| 100 | ~2.6 | ~2.7 | ~3.5 |\\n| 150 | ~4.0 | ~4.1 | ~5.6 |\\n| 200 | ~5.4 | ~5.5 | ~7.8 |\\n| 250 | ~6.7 | ~6.8 | ~9.8 |\\n| 300 | ~8.1 | ~8.2 | - |\\n| 350 | ~9.5 | ~9.6 | - |\\n| 400 | ~10.8 | ~10.9 | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A linear thickness increase suggests that the deposition is self-limiting and well-controlled, with a consistent amount of material deposited during each cycle. This is characteristic of ALD-type growth rather than uncontrolled CVD-like behavior.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"NiO_Bu-MeAMD shows the highest growth rate per cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The nearly identical slopes suggest that both precursors similarly interact with the surface, leading to comparable surface saturation behavior and reaction efficiency during each ALD cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A higher growth rate can reduce processing time and improve throughput, which is attractive for large-scale fabrication. However, faster growth can sometimes come at the cost of film density, uniformity, or impurity incorporation, so the choice depends on the required film quality.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG3_b.jpg","caption":"","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG3_b","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG3_b","subset":"multiple-scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG3_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG3_b.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"not_found"},"width":642,"height":525,"image_format":"jpeg","image_sha256":"2eae29029405c4b10415359fd331aff4802c331f70a7ce385f83ec3d571d013b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":637,"height":522}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure compares the growth per cycle of NiO films deposited using three different precursors as a function of temperature. At low temperature, the Bu-MeAMD precursor exhibits significantly higher growth per cycle than the Alanis and MeCp precursors. As temperature increases, the growth rates converge toward ~0.3 Å per cycle, indicating a common self-limiting growth regime. At the highest temperature, the Alanis-based film shows a modest increase, suggesting a change in surface kinetics or precursor efficiency.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | NiO_Alanis growth (Å/cycle) | NiO_MeCp growth (Å/cycle) | NiO_Bu-MeAMD growth (Å/cycle) |\\n|---|---|---|---|\\n| 50 | ~0.34 | ~0.44 | ~0.78 |\\n| 100 | ~0.28 | ~0.39 | ~0.56 |\\n| 150 | ~0.28 | ~0.29 | ~0.43 |\\n| 200 | ~0.30 | ~0.31 | ~0.38 |\\n| 250 | ~0.31 | - | - |\\n| 300 | ~0.32 | ~0.30 | - |\\n| 350 | ~0.40 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"NiO_Bu-MeAMD.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At higher temperatures, surface reactions become more complete and self-limiting behavior strengthens. Excess adsorption that can inflate growth at low temperature is reduced, and weakly bound species are more likely to desorb, lowering net growth per cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies that Bu-MeAMD reacts readily with surface sites even at low thermal energy, possibly due to weaker ligand bonding or more favorable adsorption geometry compared to the other precursors.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_4_figure_2.jpg","caption":"Figure 2. Nucleation curves for ABC-type ALD of $\\mathrm{SiO}_2$ on different starting surfaces. The graphs show the thickness as a function of the number of ALD cycles as measured by in situ SE. We note that due to the use of an $\\mathbf{O}_2$ plasma as the co-reactant, the topmost layer of the starting surfaces can be oxidized during the first few ALD cycles, which was accounted for in the SE modeling of $\\mathrm{SiN}_x$ .","id":"validation/atomic-layer-deposition/simulation-usecase/4/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/4/figure_2","subset":"multiple-scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":533,"height":408,"image_format":"jpeg","image_sha256":"9f4423b5fb4ac3625f755d935fb18004ee0e636840e9782689743486a450fe78","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":529,"height":401}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This multi line plot shows nucleation curves for SiO₂ deposition via an ABC-type ALD process on seven different starting surfaces (SiO₂, SiNₓ, GeO₂, WO₃, HfO₂, TiO₂, Al₂O₃). It reveals significant differences in nucleation delay: some surfaces (GeO₂, SiO₂, WO₃, SiNₓ) show immediate linear growth (~0.09 nm/cycle), while others (Al₂O₃, TiO₂, HfO₂) exhibit a delay of 10-15 cycles before growth begins. This demonstrates a pathway for selective area deposition.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | SiO₂ (nm) | SiNₓ (nm) | GeO₂ (nm) | WOₓ (nm) | HfO₂ (nm) | TiO₂ (nm) | Al₂O₃ (nm) |\\n|---|---|---|---|---|---|---|---|\\n| 0 | 0.00 | 0.15 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 1 | 0.08 | 0.05 | 0.02 | 0.01 | 0.00 | 0.00 | 0.00 |\\n| 2 | 0.18 | 0.10 | 0.08 | 0.05 | 0.00 | 0.00 | 0.00 |\\n| 3 | 0.28 | 0.20 | 0.15 | 0.10 | 0.00 | 0.00 | 0.00 |\\n| 4 | 0.38 | 0.30 | 0.22 | 0.18 | 0.00 | 0.00 | 0.00 |\\n| 5 | 0.48 | 0.40 | 0.30 | 0.25 | 0.00 | 0.00 | 0.00 |\\n| 6 | 0.58 | 0.50 | 0.38 | 0.30 | 0.00 | 0.00 | 0.00 |\\n| 7 | 0.68 | 0.60 | 0.45 | 0.38 | 0.00 | 0.00 | 0.00 |\\n| 8 | 0.80 | 0.70 | 0.52 | 0.42 | 0.00 | 0.00 | 0.00 |\\n| 9 | 0.95 | 0.85 | 0.60 | 0.48 | 0.01 | 0.01 | 0.00 |\\n| 10 | 1.02 | 0.98 | 0.68 | 0.55 | 0.02 | 0.02 | 0.00 |\\n| 11 | 1.10 | 1.08 | 0.75 | 0.62 | 0.05 | 0.05 | 0.00 |\\n| 12 | 1.20 | 1.18 | 0.82 | 0.70 | 0.08 | 0.07 | 0.00 |\\n| 13 | 1.30 | 1.25 | 0.90 | 0.78 | 0.10 | 0.09 | 0.01 |\\n| 14 | 1.40 | 1.35 | 0.98 | 0.85 | 0.12 | 0.10 | 0.02 |\\n| 15 | 1.50 | 1.45 | 1.05 | 0.92 | 0.15 | 0.12 | 0.03 |\\n| 16 | 1.60 | 1.55 | 1.15 | 1.00 | 0.18 | 0.15 | 0.05 |\\n| 17 | 1.70 | 1.65 | 1.22 | 1.08 | 0.22 | 0.18 | 0.06 |\\n| 18 | 1.80 | 1.75 | 1.30 | 1.15 | 0.26 | 0.22 | 0.08 |\\n| 19 | 1.88 | 1.85 | 1.40 | 1.22 | 0.30 | 0.26 | 0.09 |\\n| 20 | 1.95 | 1.95 | 1.50 | 1.30 | 0.35 | 0.30 | 0.10 |\\n| 21 | - | - | 1.60 | 1.40 | 0.38 | 0.32 | 0.12 |\\n| 22 | - | - | 1.70 | 1.50 | 0.42 | 0.35 | 0.13 |\\n| 23 | - | - | 1.80 | 1.60 | 0.50 | 0.38 | 0.15 |\\n| 24 | - | - | 1.90 | 1.70 | 0.55 | 0.42 | 0.18 |\\n| 25 | - | - | 2.00 | 1.80 | 0.60 | 0.48 | 0.20 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Cycles 1-15: Nucleation Delay Phase – Precursor adsorbs/reacts but forms no measurable continuous SiO₂ film (thickness ~0 nm).\\n\\nCycle ~15: Nucleation Completion – Isolated SiO₂ islands coalesce into a continuous film.\\n\\nCycles 16: Linear Growth Phase – Steady-state SiO₂ deposition at ~0.09 nm/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ABC process shows a 15-cycle delay on Al₂O₃, enabling selectivity, while the BC process shows no delay and immediate growth. The trade-off is clear: the ABC process sacrifices initial growth rate and material efficiency to achieve surface selectivity. To deposit a thin SiO₂ film only on GeO₂ and not on Al₂O₃, you must use the slower, initially non-productive ABC cycle, accepting lower throughput for the benefit of pattern definition without etching.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They exhibit linear growth immediately from the first cycle, implying that there is no nucleation barrier and the precursor adsorption is favorable on the starting substrate surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No — the SF₆/TMA etching chemistry is not suitable for processes limited to <150 °C.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_4_figure_3.jpg","caption":"Figure 3. Apparent thickness as measured after every reactant dosing pulse on (a) $\\mathrm{Al}_2\\mathrm{O}_3$ and (b) $\\mathrm{SiO}_2$ . The left-hand part of the figure represents 3 AC cycles with Hacac (A) and $\\mathrm{O}_2$ plasma (C) pulses, the middle part 3 ABC cycles with Hacac (A), BDEAS precursor (B), and $\\mathrm{O}_2$ plasma (C) pulses, and the right-hand part 3 BC cycles with BDEAS precursor (B) and $\\mathrm{O}_2$ plasma (C) pulses. The apparent thickness is used to reflect that the SE modeling did not take into account the dielectric function of the surface groups such that the thickness after step A might not correspond to the physical thickness. The starting surfaces were prepared by regular ALD.","id":"validation/atomic-layer-deposition/simulation-usecase/4/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/4/figure_3","subset":"multiple-scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":519,"height":800,"image_format":"jpeg","image_sha256":"3385ebb59c5e68e5d4e3231535436ee1051b9c1347ffb38de15237ec24eec695","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":41,"y":29,"width":478,"height":340},{"panel_id":"b","x":42,"y":399,"width":477,"height":362}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This in-situ spectroscopic ellipsometry (SE) data tracks the apparent thickness after every reactant pulse during different ALD cycle types (AC, ABC, BC) on Al₂O₃ starting surfaces. It reveals how different pulse sequences interact with each surface, showing pulses that increase thickness (film growth) or decrease it (etching/ligand exchange).\"},{\"panel_id\":\"b\",\"text\":\"This in-situ spectroscopic ellipsometry (SE) data tracks the apparent thickness after every reactant pulse during different ALD cycle types (AC, ABC, BC) on SiO₂ starting surfaces. It reveals how different pulse sequences interact after 3 cycles where a steep increase can be observed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | Apparent Thickness (nm) | Step |\\n|------------------|--------------------------|-------------|\\n| 0 | — | A - Hacac |\\n| 0 | — | B - BDEAS |\\n| 0 | — | C - O₂ Plasma |\\n| 0.5 | — | A - Hacac |\\n| 0.5 | — | B - BDEAS |\\n| 0.5 | 0 | C - O₂ Plasma |\\n| 1 | 0.36 | A - Hacac |\\n| 1 | — | B - BDEAS |\\n| 1 | — | C - O₂ Plasma |\\n| 1.5 | — | A - Hacac |\\n| 1.5 | — | B - BDEAS |\\n| 1.5 | 0.07 | C - O₂ Plasma |\\n| 2 | 0.33 | A - Hacac |\\n| 2 | — | B - BDEAS |\\n| 2 | — | C - O₂ Plasma |\\n| 2.5 | — | A - Hacac |\\n| 2.5 | — | B - BDEAS |\\n| 2.5 | 0.07 | C - O₂ Plasma |\\n| 3 | 0.33 | A - Hacac |\\n| 3 | — | B - BDEAS |\\n| 3 | — | C - O₂ Plasma |\\n| 3.5 | — | A - Hacac |\\n| 3.5 | — | B - BDEAS |\\n| 3.5 | 0.05 | C - O₂ Plasma |\\n| 4 | 0.32 | A - Hacac |\\n| 4 | 0.31 | B - BDEAS |\\n| 4 | — | C - O₂ Plasma |\\n| 4.5 | — | A - Hacac |\\n| 4.5 | — | B - BDEAS |\\n| 4.5 | 0.04 | C - O₂ Plasma |\\n| 5 | 0.34 | A - Hacac |\\n| 5 | 0.33 | B - BDEAS |\\n| 5 | — | C - O₂ Plasma |\\n| 5.5 | — | A - Hacac |\\n| 5.5 | — | B - BDEAS |\\n| 5.5 | 0.04 | C - O₂ Plasma |\\n| 6 | 0.34 | A - Hacac |\\n| 6 | 0.33 | B - BDEAS |\\n| 6 | — | C - O₂ Plasma |\\n| 6.5 | — | A - Hacac |\\n| 6.5 | — | B - BDEAS |\\n| 6.5 | 0.04 | C - O₂ Plasma |\\n| 7 | — | A - Hacac |\\n| 7 | 0.21 | B - BDEAS |\\n| 7 | — | C - O₂ Plasma |\\n| 7.5 | — | A - Hacac |\\n| 7.5 | — | B - BDEAS |\\n| 7.5 | 0.08 | C - O₂ Plasma |\\n| 8 | — | A - Hacac |\\n| 8 | 0.26 | B - BDEAS |\\n| 8 | — | C - O₂ Plasma |\\n| 8.5 | — | A - Hacac |\\n| 8.5 | — | B - BDEAS |\\n| 8.5 | 0.18 | C - O₂ Plasma |\\n| 9 | — | A - Hacac |\\n| 9 | 0.36 | B - BDEAS |\\n| 9 | — | C - O₂ Plasma |\\n| 9.5 | — | A - Hacac |\\n| 9.5 | — | B - BDEAS |\\n| 9.5 | 0.28 | C - O₂ Plasma |\\n| 10 | — | A - Hacac |\\n| 10 | — | B - BDEAS |\\n| 10 | — | C - O₂ Plasma |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Cycles | Apparent Thickness (nm) | Step |\\n|------------------|--------------------------|--------------|\\n| 0 | — | A - Hacac |\\n| 0 | 0 | B - BDEAS |\\n| 0 | 0 | C - O₂ Plasma |\\n| 0.5 | 0.02 | A - Hacac |\\n| 0.5 | — | B - BDEAS |\\n| 0.5 | — | C - O₂ Plasma |\\n| 1 | — | A - Hacac |\\n| 1 | — | B - BDEAS |\\n| 1 | 0.001 | C - O₂ Plasma |\\n| 1.5 | 0.001 | A - Hacac |\\n| 1.5 | — | B - BDEAS |\\n| 1.5 | — | C - O₂ Plasma |\\n| 2 | — | A - Hacac |\\n| 2 | — | B - BDEAS |\\n| 2 | 0.004 | C - O₂ Plasma |\\n| 2.5 | 0.001 | A - Hacac |\\n| 2.5 | — | B - BDEAS |\\n| 2.5 | — | C - O₂ Plasma |\\n| 3 | — | A - Hacac |\\n| 3 | — | B - BDEAS |\\n| 3 | 0.004 | C - O₂ Plasma |\\n| 3.5 | 0.001 | A - Hacac |\\n| 3.5 | — | B - BDEAS |\\n| 3.5 | — | C - O₂ Plasma |\\n| 4 | — | A - Hacac |\\n| 4 | 0.21 | B - BDEAS |\\n| 4 | 0.09 | C - O₂ Plasma |\\n| 4.5 | 0.12 | A - Hacac |\\n| 4.5 | — | B - BDEAS |\\n| 4.5 | — | C - O₂ Plasma |\\n| 5 | — | A - Hacac |\\n| 5 | 0.31 | B - BDEAS |\\n| 5 | 0.19 | C - O₂ Plasma |\\n| 5.5 | 0.21 | A - Hacac |\\n| 5.5 | — | B - BDEAS |\\n| 5.5 | — | C - O₂ Plasma |\\n| 6 | — | A - Hacac |\\n| 6 | 0.42 | B - BDEAS |\\n| 6 | 0.29 | C - O₂ Plasma |\\n| 6.5 | — | A - Hacac |\\n| 6.5 | — | B - BDEAS |\\n| 6.5 | — | C - O₂ Plasma |\\n| 7 | — | A - Hacac |\\n| 7 | 0.52 | B - BDEAS |\\n| 7 | 0.43 | C - O₂ Plasma |\\n| 7.5 | — | A - Hacac |\\n| 7.5 | — | B - BDEAS |\\n| 7.5 | — | C - O₂ Plasma |\\n| 8 | — | A - Hacac |\\n| 8 | 0.62 | B - BDEAS |\\n| 8 | — | C - O₂ Plasma |\\n| 8.5 | — | A - Hacac |\\n| 8.5 | — | B - BDEAS |\\n| 8.5 | 0.50 | C - O₂ Plasma |\\n| 9 | — | A - Hacac |\\n| 9 | 0.72 | B - BDEAS |\\n| 9 | — | C - O₂ Plasma |\\n| 9.5 | — | A - Hacac |\\n| 9.5 | — | B - BDEAS |\\n| 9.5 | 0.60 | C - O₂ Plasma |\\n| 10 | — | A - Hacac |\\n| 10 | — | B - BDEAS |\\n| 10 | — | C - O₂ Plasma |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It implies the as-deposited film from BDEAS on SiO₂ is already more fully oxidized or denser than on Al₂O₃, requiring less further modification by the O₂ plasma.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Pulse A (Hacac): Apparent thickness decreases (ligand exchange/etch).\\n\\nPulse B (BDEAS): Apparent thickness increases (precursor adsorption/Si–O deposition).\\n\\nPulse C (O₂ plasma): Apparent thickness increases slightly (oxidation/ densification).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"On Al₂O₃, the Hacac pulse causes a significant thickness decrease, indicating active ligand-exchange or etching. On SiO₂, it causes little to no change. This reveals a critical balance which is Hacac is an effective surface modifier for Al₂O₃ (enabling subsequent ABC selectivity), but it also etches Al₂O₃, which could be detrimental if not tightly controlled. On SiO₂, it is inert, providing no benefit but also no harm.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This difference in behaviour allows both selective growth and gentle etch-back. In a pattern containing Al₂O₃ and SiO₂, the ABC cycles would grow SiO₂ only on the Al₂O₃ regions, while slightly thinning the Al₂O₃ and leaving the SiO₂ regions unchanged. This helps fill features on one material while cleaning unwanted film from the other, improving the overall pattern quality.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_12.jpg","caption":"Figure 12. Calculated potential energy profiles for the reaction between $-\\mathrm{Si(OH)}_3$ species and surface $-\\mathrm{OH}$ group.","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_12","subset":"multiple-scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_12.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":600,"height":436,"image_format":"jpeg","image_sha256":"d3c7e60df6491d10155af94ae808db7e9a3b1311ec3ca5747a5f52b32f4b078d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":600,"height":436}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot relates reaction pathways and the energy changes along these different pathways between the transtition states, reactants and products\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Pathway | Energy (kcal/mol) |\\n|------------------|------------------|\\n| R | 0 |\\n| TS (a) | 20.8 |\\n| TS (b) | 30 |\\n| TS (c) | 34.5 |\\n| P(a) | -10.2 |\\n| P(b) | 7.3 |\\n| P(c) | 4.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Reaction between the −SiH3 Intermediate with the Surface −OH Group Followed by Oxidation. To grow a denser and purer SiO2 film via ALD, the −SiH3 intermediate species on the surface could react with a surface −OH group to form a −SiH2 group.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The calculated activation energy are\\n1. For Path a 36.8 kcal/mol\\n2. For Path b 37.1 kcal/mol\\n3. For path c is 41.9 kcal/mol\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Thermodynamically, this process is moderately endothermic with the calculated reaction energy of 10.3 kcal/mol. The structure of the final product (Pc)\\nexhibits a modest geometric strain with the O−Si−O angle of 117.1°, which deviates slightly from the typical angle of 109.8° expected for sp3 hybridization. The calculated Si−O distance is 1.679 Å in the final state, significantly longer than the corresponding values in SiO2 single crystal (1.610 Å)\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_13.jpg","caption":"Figure 13. Calculated potential energy profiles of the whole reaction.","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_13","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_13","subset":"multiple-scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_13.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":1077,"height":478,"image_format":"jpeg","image_sha256":"2ae4e53d80adf1fd929e683fdf5ce1a3229e119f28f3d0dc1acd1d6af6f2b632","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1077,"height":478}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a reaction pathway involving the dissociation of DSBAS (Dihydrogen Silicate Borate Ammonium Salt) into Si(OH)2* through various transition states (TS) and intermediates.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Pathway | Energy (kcal/mol) |\\n|----------------------------|----------------|\\n| OH* (DSBAS Dissociation) | 0 |\\n| TS (DSBAS Dissociation) | 6.1 |\\n| SiH₃ | -5 |\\n| TS (H₂ elimination Path a) | 36.8 |\\n| TS (H₂ elimination Path b) | 41.9 |\\n| TS (H₂ elimination Path c) | 37.1 |\\n| TS (oxidation) | 12.7 |\\n| SiH₂ | -25 |\\n| SiH₂(OH)* | -121 |\\n| TS (Oxidation) |-109.2 |\\n| SiH(OH)₂ | -225 |\\n| TS (Oxidation) | -219.5 |\\n| Si(OH)₃ | -340 |\\n| TS (H₂O elimination Path a)| -319.2 |\\n| TS (H₂O elimination Path b)| -310 |\\n| TS (H₂O elimination Path c)| -305.5 |\\n| Si(OH)₂* (Path a) | -330 |\\n| Si(OH)₂* (Path b) | -340 |\\n| Si(OH)₂* (Path c) | -350 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALD process is initiated by the dissociative chemisorption of DSBAS, which is both thermochemically and kinetically facile. Elimination of H2 through reaction between the resultant −SiH3 species and a nearby surface hydroxyl group is kinetically prohibitive. Thus, further reactions along this pathway can be essentially ruled out.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Although there are three possible pathways for the −Si(OH)3 species to react with the adjacent surface hydroxyl groups, only one of them is both\\nthermodynamically and kinetically favorable, which leads to growing a SiO2 thin film in a crystalline structure\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thin film deposited with DSBAS and ozone to be dense and conformal and suitable for low-temperature deposition of SiO2 films.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_7.jpg","caption":"Figure 7. Calculated potential energy profiles for the reaction between $-\\mathrm{SiH}_3$ species and surface $-\\mathrm{OH}$ group.","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_7","subset":"multiple-scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":600,"height":434,"image_format":"jpeg","image_sha256":"189c0b8f867bdba82ac94ef71ab2f87a02ea6d1d10220b07468c30ba14eec450","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":600,"height":434}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart illustrates a reaction pathway with energy changes at various points, including reactants (R), transition state (TS), and products (P) for three reaction pathways - a, b, c.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Pathway | Energy (kcal/mol) |\\n|------------------|------------------|\\n| R | 0 |\\n| TS (a) | 36.8 |\\n| TS (b) | 37.1 |\\n| TS (c) | 41.9 |\\n| P(a) | -22 |\\n| P(b) | 11 |\\n| P(c) | 1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. For Path a = 36.8 kcal/mol\\n2. For path b = 37.1 kcal/mol\\n3. For path c = 41.9 kcal/mol\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Process b was found to be modestly endothermic with the reaction energy of 0.2 kcal/mol and for path C thermodynamically, the process is moderately endothermic with the calculated reaction energy of 10.3 kcal/mol\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"From the figure, path a and path c have the same transition state energy profile.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_3.jpg","caption":"Figure 3. (a) Mass change after the TMA exposure $(\\Delta M_{\\mathrm{TMA}})$ , mass change after the HF exposure $(\\Delta M_{\\mathrm{HF}})$ and mass change per cycle (MCPC) versus number of ALE cycles at $300^{\\circ}\\mathrm{C}$ . (b) $\\Delta M_{\\mathrm{TMA}} / \\mathrm{MCPC}$ ratio versus number of ALE cycles.","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_3","subset":"multiple-scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":675,"height":691,"image_format":"jpeg","image_sha256":"f7514a90d62df5b54ec1a4b0b8cc09f8ec265cb5dffc3fb575f684b5da502e1f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":670,"height":300},{"panel_id":"b","x":0,"y":311,"width":672,"height":377}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Evolution of mass changes during Al₂O₃ ALE at 300 °C, showing the mass change after TMA exposure (ΔM_TMA), the mass change after HF exposure (ΔM_HF), and the mass change per cycle (MCPC). After a short nucleation period, ΔM_TMA and ΔM_HF reach constant values, resulting in a steady-state MCPC of approximately −15.9 ng/(cm²·cycle).\"},{\"panel_id\":\"b\",\"text\":\"ΔM_TMA/MCPC ratio as a function of ALE cycles, which stabilizes at approximately 1.8 after the first three cycles. This steady ratio is used to define the stoichiometry of the ALE reactions and indicates consistent, repeatable mass changes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of cycles | ΔM_HF (ng/cm²) | MCPC (ng/(cm²·cycle)) | ΔM_TMA (ng/cm²) |\\n|------------------|----------------|-----------------------|------------------|\\n| 0 | ~35 | ~ -15 | ~ -30 |\\n| 20 | ~15 | ~ -15 | ~ -30 |\\n| 40 | ~15 | ~ -15 | ~ -30 |\\n| 60 | ~15 | ~ -15 | ~ -30 |\\n| 80 | ~15 | ~ -20 | ~ -30 |\\n| 100 | ~15 | ~ -15 | ~ -30 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of cycles | ΔM_TMA / MCPC |\\n|------------------|---------------|\\n| 0 | ~0.5 |\\n| 20 | ~2.0 |\\n| 40 | ~2.0 |\\n| 60 | ~2.0 |\\n| 80 | ~2.0 |\\n| 100 | ~2.0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This value can be used to calculate the stoichiometry of the reactions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For every cycle the mass changes are constant showing the self-limiting and controlable behaviour of ALE.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that there are some defects on the substrate to which HF can adsorb. Similar for TMA.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A near-constant ratio indicates that the TMA-related mass change scales proportionally with the net per-cycle mass change. This suggests the TMA half-reaction contribution remains consistent across most cycles. Such behavior is consistent with a stable surface chemistry after the initial transient.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Monitor whether ΔM_TMA/MCPC remains near ~2\\n-Flag sustained drift away from this value\\n-Treat early outliers as startup behavior and focus on the stable regime\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A constant ratio of ~1.8 indicates stable reaction stoichiometry throughout the ALE process.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughness changes usually alter surface site density.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ΔMTMA/MCPC ratio shows a steady-state value of 1.8 after the first three ALE cycles. The ΔMTMA/MCPC ratio will be employed to define the stoichiometry of the Al2O3 ALE reactions\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After a short nucleation period, MCPC attains a steady state value of −15.9 ng/(cm2 cycle).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"First two cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"First three cycles → ΔMTMA/MCPC increases, After three cycles → ratio becomes steady\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A constant MCPC shows that the mass change per cycle is reproducible and self-limiting.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ΔMTMA/MCPC ratio provides a measure of the relative mass contribution from TMA during each cycle. By monitoring this ratio, researchers can define the stoichiometry of the ALE reactions and verify that the process remains consistent across cycles. A stable ratio ensures predictable etching behavior and allows optimization of process parameters for precise Al₂O₃ removal.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mass change per cycle remains relatively constant throughout the number of cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As we can see in the figure, the difference between the mass change after HF exposure and the mass change after TMA exposure leads to the MCPC being closest to the TMA mass change values, meaning that TMA exposure has the greatest impact on the mass change per cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This means that the value of the last cycle is more negative than that of the previous one. For this reason, the difference between the two is still negative.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 180 ng/cm² is removed.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The MCPC is calculated by adding both the ΔM's of the TMA and HF subcycles together.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ΔM_HF is the mass change measured after the HF half-reaction. ΔM_TMA is the mass change measured after the TMA half-reaction. MCPC is the net mass change over a full ALE cycle, reflecting the combined outcome of both steps.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Most stable: ΔM_HF, which stays near ~15 ng/cm² after the initial cycle\\n-Also largely stable: ΔM_TMA around −30 ng/cm²\\n-Largest deviation: MCPC, which shows a deeper negative point near ~80 cycles\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first cycles establish the initial AlF₃ surface layer on the hydroxylated Al₂O₃ substrate (nucleation period).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ΔM_TMA (blue): mass change after TMA exposure; ΔM_HF (red): mass change after HF exposure; MCPC (black): total mass change per cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The constant values over 100 cycles demonstrate highly reproducible, steady-state etching behavior.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. HF Exposure: Fluorinates the Al₂O₃ surface, forming a non-volatile AlF₃-like layer (mass gain).\\n\\n2. Purge: Removes excess HF and byproducts.\\n\\n3. TMA Exposure: Performs ligand-exchange, converting the AlF₃ layer to volatile species that desorb (mass loss).\\n\\n4. Purge: Clears volatile etch products and residual TMA.\\nMeasuring mass change after each half-cycle with a quartz crystal microbalance (QCM) allows direct, real-time monitoring of the fluorination and ligand-exchange reactions. This confirms each step is self-limiting and enables precise control over the etch amount per cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process at 300°C is preferable for consistent etch rate. At lower temperatures, the reaction kinetics are slower, potentially leading to incomplete reactions and longer transients before stabilization. The 300°C data shows stable ΔM_TMA and ΔM_HF values after few cycles, indicating rapid achievement of steady-state surface conditions, which ensures a reproducible etch rate critical for multi-cycle etching.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The stable mass changes imply a highly suitable process. The consistent, self-limiting half-reactions guarantee uniform etching per cycle, enabling precise depth control (critical for the 10 nm target). Furthermore, the self-limiting nature ensures perfect conformality in high-aspect-ratio trenches, as reactions proceed equally on all surfaces, preventing lateral etching or bowing.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"MCPC is defined by mass change after TMA and HF exposure. MCPC = ΔMTMA + ΔMHF.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"13 ng/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"-29 ng/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"16 ng/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"According to the authors, this ratio can be used to gain information about the stoichiometry of the ALE reactions that occur on the Al2O3 substrate.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A positive ΔMHF means the HF step increases the surface mass, consisting with fluorinating the surface. A negative ΔMTMA means the TMA step decreases the surface mass, indicating it removes material by converting the surface species into volatile products that leave the surface. Overall, HF builds a fluorinated layer, and TMA strips it.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All three remain relatively steady throughout the experiment. ΔM_HF stays slightly positive and ΔM_TMA remains slightly negative with only small drifts, while MCPC stays near a low positive value. The trends suggest that the etching mechanism does not significantly change over time.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"ΔM_HF, ΔM_TMA, MCPC.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the figure shows that after an initial nucleation period, both ΔMTMA and ΔMHF become very constant, indicating that the ALE process has reached a steady state. This steady behavior demonstrates the self-limiting nature of the sequential TMA and HF reactions.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_9.jpg","caption":"Figure 9. X-ray reflectivity and spectroscopic ellipsometry measurements of $\\mathrm{Al}_2\\mathrm{O}_3$ film thickness versus number of $\\mathrm{Al}_2\\mathrm{O}_3$ ALE cycles for initial $\\mathrm{Al}_2\\mathrm{O}_3$ ALD films grown using $150\\mathrm{Al}_2\\mathrm{O}_3$ ALD cycles.","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_9","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_9","subset":"multiple-scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":670,"height":536,"image_format":"jpeg","image_sha256":"6e616a6c63a407409c59e74a120706b9b8c8858010c8521c0dfab0fbbb386b33","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":670,"height":536}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart shows Al₂O₃ thickness as a function of the number of cycles at 300 °C. Thickness decreases approximately linearly with increasing cycles. Measurements from XRR and SE closely agree across the full range, indicating consistent thickness reduction per cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of cycles | Thickness (Å), XRR | Thickness (Å), SE |\\n|------------------|--------------------|--------------------|\\n| 0 | ~170 | ~165 |\\n| 50 | ~130 | ~135 |\\n| 100 | ~100 | ~105 |\\n| 200 | ~50 | ~55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows both X-ray reflectivity and ellipsometry measurements of Al2O3 films.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For both growth temperatures (200 °C and 300 °C), Al2O3 thickness decreases as the number of etching cycles increases.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The highest deposition rate is achieved at 200 degrees C as there the initial thickness is higher.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Such a difference is not visible as for both the substrates the slope is equal.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"100 cycles of etching.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In this specific instance both SE and XRR yield the same thicknesses.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thickness is plotted only at specific integer cycle counts rather than continuously in time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The difference is largest at 200 ALE cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the same number of ALE cycles, the thickness values at 200 °C are consistently higher than those at 300 °C. This difference is visible at intermediate and high cycle counts. The separation between the curves persists across the full range.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Plotting thickness versus cycle number allows direct tracking of material removal as processing proceeds. It provides a simple way to compare outcomes under different conditions. This is useful for assessing repeatability across cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, both techniques yield an etch rate of 0.46 Å/cycle at 300°C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The slightly higher y-intercepts (~142 Å vs. 141 Å measured) result from mass gain during the nucleation period of the first ALE cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the growth temperature does not affect the etch rate. Films grown at 200°C and 300°C both exhibit identical etch rates of 0.46 Å/cycle when etched at 300°C. This indicates the ALE process is determined by the etching temperature and chemistry, not the initial film deposition conditions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Open red circles: XRR measurements for Al₂O₃ grown at 300°C\\nFilled blue triangles: SE measurements for Al₂O₃ grown at 300°C\\nOpen black squares: XRR measurements for Al₂O₃ grown at 200°C\\nFilled green triangles: SE measurements for Al₂O₃ grown at 200°C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Begin an ALE cycle (HF/TMA exposures) on the Al₂O₃ film.\\n\\n2. After the cycle completes, pause the process and allow conditions to stabilize.\\n\\n3. Perform an SE measurement scan over a range of photon energies.\\n\\n4. Fit the SE data with an optical model to extract the new film thickness.\\nThis sequence integrates metrology directly into the process flow, enabling real-time, non-destructive monitoring of etch depth without breaking vacuum.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For sub-Å precision on a 20 Å film, 200°C is preferable. The slower rate provides the necessary resolution for fine trimming, despite the longer process time.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Higher temperature increases the etch rate. The fundamental reason is the increased thermal energy, which accelerates the kinetics of both the surface fluorination (HF) and ligand-exchange (TMA) reactions, allowing each cycle to remove material more completely and rapidly.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This capability allows precise tuning of a transistor's threshold voltage (Vₜ). The gate oxide thickness directly influences Vₜ; by using ALE to trim the Al₂O₃ dielectric layer by a few Ångströms, the Vₜ can be adjusted post-deposition to meet exact specifications, improving chip performance and yield.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The initial Al2O3 films grown are\\n1. At 300 °C, it is 141 Å\\n2. At 200 °C, it is 170 Å\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film thickness from XRR versus number of ALE cycles yields an etch rate of 0.46 Å/cycle. Thenspectroscopic ellipsometry (SE) measurements on these same samples also yield an etch rate of 0.46 Å/cycle. In addition, the etch rates determined by XRR and SE are similar to the etch rate obtained by the in situ QCM experiments at at 300 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"These slightly larger thicknesses originate from the mass gain that occurs during the nucleation\\nof the ALE process on the first ALE cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200 °C, 0 cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"By taking the thickness loss over a cycle interval and dividing by the number of cycles. From 0 to 200 cycles, 300 °C sample drops from 140 Å to 49 Å, so (140−49)/200=0.46 Å/cycle. At 200 °C, XRR gives (167−84)/200 = 0.42. SE measurement gives a slightly different result: (170−84)/200 = 0.43 Å/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For both temperatures, Al₂O₃ thickness decreases approximately linearly as the number of cycles increases. This indicates a steady removal of material per cycle rather than abrupt or saturating behavior.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"X-ray reflectivity (XRR) and spectroscopic ellipsometry (SE).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"200 °C, 300 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch rate is the same for both films, approximately 0.46 Å/cycle, showing that initial growth temperature does not affect ALE etch rate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Film thickness by X-ray reflectivity (XRR), Film thickness by spectroscopic ellipsometry (SE), Refractive index (n ≈ 1.67–1.68)\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both XRR and SE measurements show a consistent linear decrease in Al₂O₃ thickness with ALE cycles, confirming the etch rate is uniform and independent of initial ALD film growth temperature. This consistency demonstrates that the ALE process can be reliably used for precise, controllable thinning of Al₂O₃ films in applications requiring accurate nanoscale thickness control.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_6.jpg","caption":"Figure 6. Etched thickness of $\\mathrm{Al}_2\\mathrm{O}_3$ , $\\mathrm{SiO}_2$ , and $\\mathrm{Si}_3\\mathrm{N}_4$ as a function of the number of etch cycles at $460^{\\circ}\\mathrm{C}$ . The $\\mathrm{NbF}_5$ and $\\mathrm{CCl_4}$ pulse times are 3 and $0.5\\mathrm{~s}$ , respectively. The $\\mathrm{N}_2$ purge time was kept constant at 6 s.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_6","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_6","subset":"multiple-scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":450,"height":414,"image_format":"jpeg","image_sha256":"e6382c1b84c8103869e81e50a730aea1e224e985378fbe084c63756a0a203fcc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":450,"height":414}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the etched thickness of Al2O3 (ALD), SiO2 (TOx), and Si3N4 (LPCVD) as a function of etch cycles. For Al2O, the thickness increases linearly with etch cycles. For Si3N4 (LPCVD) and SiO2 (TOx), no etching is observed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| etch cycles | etched thickness [nm] | Film |\\n|---|---|---|\\n| 1 | 0,40 | Al2O3 (ALD) |\\n| 60 | 5,49 | Al2O3 (ALD) |\\n| 100 | 12,19 | Al2O3 (ALD) |\\n| 149 | 17,05 | Al2O3 (ALD) |\\n| 0 | 0,51 | SiO2(TOx) |\\n| 60 | 0,48 | SiO2(TOx) |\\n| 100 | 0,44 | SiO2(TOx) |\\n| 150 | 0,44 | SiO2(TOx) |\\n| 0 | 0,32 | Si3N4(LPCVD) |\\n| 50 | 0,40 | Si3N4(LPCVD) |\\n| 100 | 0,44 | Si3N4(LPCVD) |\\n| 150 | 0,44 | Si3N4(LPCVD) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"0.11 nm/cycle. The trendlineshown on the image is y = 0.11x - 0.49. The slope of the line represents the rate of removal per cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiO2 and Si3N4.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"EPC is constant (as the trendline is linear)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"98%\"}]}]"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_11_fig_3.jpg","caption":"Fig. 3. Fluorine content between 225 and $400^{\\circ}\\mathrm{C}$ .","id":"validation/atomic-layer-deposition/experimental-usecase/11/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/11/fig_3","subset":"multiple-scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents fluorine (F) and oxygen (O) atomic concentrations measured in WNₓCᵧ films across deposition temperatures from ~225°C to 400°C. Fluorine remains consistently low (<2 at.%), reaching its minimum near 300–350°C, while oxygen remains higher (3–5 at.%), largely from post-deposition air exposure. The trends highlight the temperature region where impurity control is optimal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition Temperature (°C)|O Content (at-%)|F Content (at-%)|\\n|----------------------------|----------------|----------------|\\n|~225|~4.8|~1.2|\\n|~250|~4.5|~1.0|\\n|~275|~5.2|~0.2|\\n|~300|~4.0|~0.0|\\n|~325|~3.5|~0.8|\\n|~350|~2.5–3.0|~0.2|\\n|~375|~3.2|~0.7|\\n|~400|~3.8|~1.0|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lower fluorine levels indicate more effective ligand removal and better reduction chemistry, which leads to denser, lower-resistivity films with improved electrical and chemical stability. Since fluorine can negatively affect conductivity and barrier integrity, achieving near-zero F content at 300–350°C enhances the film’s suitability for use in advanced interconnect structures where purity and stability are critical.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Oxygen remains relatively high (4–5 at.%) at all temperatures, while fluorine drops from around 1.0–1.2 at.% at low temperatures to nearly 0 at mid-range temperatures.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, impurity concentrations change with temperature, with fluorine decreasing significantly at optimal ALD temperatures.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Low fluorine concentration, Moderate but stable oxygen levels, Temperature-dependent impurity removal, Evidence of an ALD window around 300–350°C\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":539,"height":332}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/K.-E. Elers et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":539,"height":322,"image_format":"jpeg","image_sha256":"44edf15ab02ff9882089e71f1f9a00dfe4295da9c560da0f1ec37097756e4289","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG3_a.jpg","caption":"(a)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG3_a","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG3_a","subset":"multiple-scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot compares NiO film thickness versus ALD cycle number for three Ni precursors. NiO_Alanis and NiO_MeCp track each other closely and show near-linear growth up to ~400 cycles, reaching ~10.8–10.9 nm. NiO_Bu-MeAMD grows faster (steeper slope), reaching ~9.8 nm by ~250 cycles (and the series does not extend beyond that range in this panel). Overall, the main message is the growth-per-cycle difference among precursors, with Bu-MeAMD giving higher thickness at fewer cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of cycles | NiO_Alanis (nm) | NiO_MeCp (nm) | NiO_Bu-MeAMD (nm) |\\n|---|---|---|---|\\n| 0 | 0.0 | 0.0 | 0.0 |\\n| 50 | ~1.2 | ~1.3 | ~0.7 |\\n| 100 | ~2.6 | ~2.7 | ~3.5 |\\n| 150 | ~4.0 | ~4.1 | ~5.6 |\\n| 200 | ~5.4 | ~5.5 | ~7.8 |\\n| 250 | ~6.7 | ~6.8 | ~9.8 |\\n| 300 | ~8.1 | ~8.2 | - |\\n| 350 | ~9.5 | ~9.6 | - |\\n| 400 | ~10.8 | ~10.9 | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A linear thickness increase suggests that the deposition is self-limiting and well-controlled, with a consistent amount of material deposited during each cycle. This is characteristic of ALD-type growth rather than uncontrolled CVD-like behavior.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"NiO_Bu-MeAMD shows the highest growth rate per cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The nearly identical slopes suggest that both precursors similarly interact with the surface, leading to comparable surface saturation behavior and reaction efficiency during each ALD cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A higher growth rate can reduce processing time and improve throughput, which is attractive for large-scale fabrication. However, faster growth can sometimes come at the cost of film density, uniformity, or impurity incorporation, so the choice depends on the required film quality.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":615,"height":512}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG3_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG3_a.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":619,"height":519,"image_format":"jpeg","image_sha256":"0e2f8bf841ee675d96257227cba1c4ff91d90b7c83bb46b97b86bc55239ed1ab","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG3_b.jpg","caption":"","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG3_b","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG3_b","subset":"multiple-scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure compares the growth per cycle of NiO films deposited using three different precursors as a function of temperature. At low temperature, the Bu-MeAMD precursor exhibits significantly higher growth per cycle than the Alanis and MeCp precursors. As temperature increases, the growth rates converge toward ~0.3 Å per cycle, indicating a common self-limiting growth regime. At the highest temperature, the Alanis-based film shows a modest increase, suggesting a change in surface kinetics or precursor efficiency.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | NiO_Alanis growth (Å/cycle) | NiO_MeCp growth (Å/cycle) | NiO_Bu-MeAMD growth (Å/cycle) |\\n|---|---|---|---|\\n| 50 | ~0.34 | ~0.44 | ~0.78 |\\n| 100 | ~0.28 | ~0.39 | ~0.56 |\\n| 150 | ~0.28 | ~0.29 | ~0.43 |\\n| 200 | ~0.30 | ~0.31 | ~0.38 |\\n| 250 | ~0.31 | - | - |\\n| 300 | ~0.32 | ~0.30 | - |\\n| 350 | ~0.40 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"NiO_Bu-MeAMD.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At higher temperatures, surface reactions become more complete and self-limiting behavior strengthens. Excess adsorption that can inflate growth at low temperature is reduced, and weakly bound species are more likely to desorb, lowering net growth per cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies that Bu-MeAMD reacts readily with surface sites even at low thermal energy, possibly due to weaker ligand bonding or more favorable adsorption geometry compared to the other precursors.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":1,"y":1,"width":637,"height":522}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG3_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG3_b.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"not_found"},"width":642,"height":525,"image_format":"jpeg","image_sha256":"2eae29029405c4b10415359fd331aff4802c331f70a7ce385f83ec3d571d013b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_4_figure_2.jpg","caption":"Figure 2. Nucleation curves for ABC-type ALD of $\\mathrm{SiO}_2$ on different starting surfaces. The graphs show the thickness as a function of the number of ALD cycles as measured by in situ SE. We note that due to the use of an $\\mathbf{O}_2$ plasma as the co-reactant, the topmost layer of the starting surfaces can be oxidized during the first few ALD cycles, which was accounted for in the SE modeling of $\\mathrm{SiN}_x$ .","id":"validation/atomic-layer-deposition/simulation-usecase/4/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/4/figure_2","subset":"multiple-scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This multi line plot shows nucleation curves for SiO₂ deposition via an ABC-type ALD process on seven different starting surfaces (SiO₂, SiNₓ, GeO₂, WO₃, HfO₂, TiO₂, Al₂O₃). It reveals significant differences in nucleation delay: some surfaces (GeO₂, SiO₂, WO₃, SiNₓ) show immediate linear growth (~0.09 nm/cycle), while others (Al₂O₃, TiO₂, HfO₂) exhibit a delay of 10-15 cycles before growth begins. This demonstrates a pathway for selective area deposition.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | SiO₂ (nm) | SiNₓ (nm) | GeO₂ (nm) | WOₓ (nm) | HfO₂ (nm) | TiO₂ (nm) | Al₂O₃ (nm) |\\n|---|---|---|---|---|---|---|---|\\n| 0 | 0.00 | 0.15 | 0.00 | 0.00 | 0.00 | 0.00 | 0.00 |\\n| 1 | 0.08 | 0.05 | 0.02 | 0.01 | 0.00 | 0.00 | 0.00 |\\n| 2 | 0.18 | 0.10 | 0.08 | 0.05 | 0.00 | 0.00 | 0.00 |\\n| 3 | 0.28 | 0.20 | 0.15 | 0.10 | 0.00 | 0.00 | 0.00 |\\n| 4 | 0.38 | 0.30 | 0.22 | 0.18 | 0.00 | 0.00 | 0.00 |\\n| 5 | 0.48 | 0.40 | 0.30 | 0.25 | 0.00 | 0.00 | 0.00 |\\n| 6 | 0.58 | 0.50 | 0.38 | 0.30 | 0.00 | 0.00 | 0.00 |\\n| 7 | 0.68 | 0.60 | 0.45 | 0.38 | 0.00 | 0.00 | 0.00 |\\n| 8 | 0.80 | 0.70 | 0.52 | 0.42 | 0.00 | 0.00 | 0.00 |\\n| 9 | 0.95 | 0.85 | 0.60 | 0.48 | 0.01 | 0.01 | 0.00 |\\n| 10 | 1.02 | 0.98 | 0.68 | 0.55 | 0.02 | 0.02 | 0.00 |\\n| 11 | 1.10 | 1.08 | 0.75 | 0.62 | 0.05 | 0.05 | 0.00 |\\n| 12 | 1.20 | 1.18 | 0.82 | 0.70 | 0.08 | 0.07 | 0.00 |\\n| 13 | 1.30 | 1.25 | 0.90 | 0.78 | 0.10 | 0.09 | 0.01 |\\n| 14 | 1.40 | 1.35 | 0.98 | 0.85 | 0.12 | 0.10 | 0.02 |\\n| 15 | 1.50 | 1.45 | 1.05 | 0.92 | 0.15 | 0.12 | 0.03 |\\n| 16 | 1.60 | 1.55 | 1.15 | 1.00 | 0.18 | 0.15 | 0.05 |\\n| 17 | 1.70 | 1.65 | 1.22 | 1.08 | 0.22 | 0.18 | 0.06 |\\n| 18 | 1.80 | 1.75 | 1.30 | 1.15 | 0.26 | 0.22 | 0.08 |\\n| 19 | 1.88 | 1.85 | 1.40 | 1.22 | 0.30 | 0.26 | 0.09 |\\n| 20 | 1.95 | 1.95 | 1.50 | 1.30 | 0.35 | 0.30 | 0.10 |\\n| 21 | - | - | 1.60 | 1.40 | 0.38 | 0.32 | 0.12 |\\n| 22 | - | - | 1.70 | 1.50 | 0.42 | 0.35 | 0.13 |\\n| 23 | - | - | 1.80 | 1.60 | 0.50 | 0.38 | 0.15 |\\n| 24 | - | - | 1.90 | 1.70 | 0.55 | 0.42 | 0.18 |\\n| 25 | - | - | 2.00 | 1.80 | 0.60 | 0.48 | 0.20 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Cycles 1-15: Nucleation Delay Phase – Precursor adsorbs/reacts but forms no measurable continuous SiO₂ film (thickness ~0 nm).\\n\\nCycle ~15: Nucleation Completion – Isolated SiO₂ islands coalesce into a continuous film.\\n\\nCycles 16: Linear Growth Phase – Steady-state SiO₂ deposition at ~0.09 nm/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ABC process shows a 15-cycle delay on Al₂O₃, enabling selectivity, while the BC process shows no delay and immediate growth. The trade-off is clear: the ABC process sacrifices initial growth rate and material efficiency to achieve surface selectivity. To deposit a thin SiO₂ film only on GeO₂ and not on Al₂O₃, you must use the slower, initially non-productive ABC cycle, accepting lower throughput for the benefit of pattern definition without etching.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They exhibit linear growth immediately from the first cycle, implying that there is no nucleation barrier and the precursor adsorption is favorable on the starting substrate surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No — the SF₆/TMA etching chemistry is not suitable for processes limited to <150 °C.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":529,"height":401}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":533,"height":408,"image_format":"jpeg","image_sha256":"9f4423b5fb4ac3625f755d935fb18004ee0e636840e9782689743486a450fe78","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_4_figure_3.jpg","caption":"Figure 3. Apparent thickness as measured after every reactant dosing pulse on (a) $\\mathrm{Al}_2\\mathrm{O}_3$ and (b) $\\mathrm{SiO}_2$ . The left-hand part of the figure represents 3 AC cycles with Hacac (A) and $\\mathrm{O}_2$ plasma (C) pulses, the middle part 3 ABC cycles with Hacac (A), BDEAS precursor (B), and $\\mathrm{O}_2$ plasma (C) pulses, and the right-hand part 3 BC cycles with BDEAS precursor (B) and $\\mathrm{O}_2$ plasma (C) pulses. The apparent thickness is used to reflect that the SE modeling did not take into account the dielectric function of the surface groups such that the thickness after step A might not correspond to the physical thickness. The starting surfaces were prepared by regular ALD.","id":"validation/atomic-layer-deposition/simulation-usecase/4/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/4/figure_3","subset":"multiple-scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This in-situ spectroscopic ellipsometry (SE) data tracks the apparent thickness after every reactant pulse during different ALD cycle types (AC, ABC, BC) on Al₂O₃ starting surfaces. It reveals how different pulse sequences interact with each surface, showing pulses that increase thickness (film growth) or decrease it (etching/ligand exchange).\"},{\"panel_id\":\"b\",\"text\":\"This in-situ spectroscopic ellipsometry (SE) data tracks the apparent thickness after every reactant pulse during different ALD cycle types (AC, ABC, BC) on SiO₂ starting surfaces. It reveals how different pulse sequences interact after 3 cycles where a steep increase can be observed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | Apparent Thickness (nm) | Step |\\n|------------------|--------------------------|-------------|\\n| 0 | — | A - Hacac |\\n| 0 | — | B - BDEAS |\\n| 0 | — | C - O₂ Plasma |\\n| 0.5 | — | A - Hacac |\\n| 0.5 | — | B - BDEAS |\\n| 0.5 | 0 | C - O₂ Plasma |\\n| 1 | 0.36 | A - Hacac |\\n| 1 | — | B - BDEAS |\\n| 1 | — | C - O₂ Plasma |\\n| 1.5 | — | A - Hacac |\\n| 1.5 | — | B - BDEAS |\\n| 1.5 | 0.07 | C - O₂ Plasma |\\n| 2 | 0.33 | A - Hacac |\\n| 2 | — | B - BDEAS |\\n| 2 | — | C - O₂ Plasma |\\n| 2.5 | — | A - Hacac |\\n| 2.5 | — | B - BDEAS |\\n| 2.5 | 0.07 | C - O₂ Plasma |\\n| 3 | 0.33 | A - Hacac |\\n| 3 | — | B - BDEAS |\\n| 3 | — | C - O₂ Plasma |\\n| 3.5 | — | A - Hacac |\\n| 3.5 | — | B - BDEAS |\\n| 3.5 | 0.05 | C - O₂ Plasma |\\n| 4 | 0.32 | A - Hacac |\\n| 4 | 0.31 | B - BDEAS |\\n| 4 | — | C - O₂ Plasma |\\n| 4.5 | — | A - Hacac |\\n| 4.5 | — | B - BDEAS |\\n| 4.5 | 0.04 | C - O₂ Plasma |\\n| 5 | 0.34 | A - Hacac |\\n| 5 | 0.33 | B - BDEAS |\\n| 5 | — | C - O₂ Plasma |\\n| 5.5 | — | A - Hacac |\\n| 5.5 | — | B - BDEAS |\\n| 5.5 | 0.04 | C - O₂ Plasma |\\n| 6 | 0.34 | A - Hacac |\\n| 6 | 0.33 | B - BDEAS |\\n| 6 | — | C - O₂ Plasma |\\n| 6.5 | — | A - Hacac |\\n| 6.5 | — | B - BDEAS |\\n| 6.5 | 0.04 | C - O₂ Plasma |\\n| 7 | — | A - Hacac |\\n| 7 | 0.21 | B - BDEAS |\\n| 7 | — | C - O₂ Plasma |\\n| 7.5 | — | A - Hacac |\\n| 7.5 | — | B - BDEAS |\\n| 7.5 | 0.08 | C - O₂ Plasma |\\n| 8 | — | A - Hacac |\\n| 8 | 0.26 | B - BDEAS |\\n| 8 | — | C - O₂ Plasma |\\n| 8.5 | — | A - Hacac |\\n| 8.5 | — | B - BDEAS |\\n| 8.5 | 0.18 | C - O₂ Plasma |\\n| 9 | — | A - Hacac |\\n| 9 | 0.36 | B - BDEAS |\\n| 9 | — | C - O₂ Plasma |\\n| 9.5 | — | A - Hacac |\\n| 9.5 | — | B - BDEAS |\\n| 9.5 | 0.28 | C - O₂ Plasma |\\n| 10 | — | A - Hacac |\\n| 10 | — | B - BDEAS |\\n| 10 | — | C - O₂ Plasma |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Cycles | Apparent Thickness (nm) | Step |\\n|------------------|--------------------------|--------------|\\n| 0 | — | A - Hacac |\\n| 0 | 0 | B - BDEAS |\\n| 0 | 0 | C - O₂ Plasma |\\n| 0.5 | 0.02 | A - Hacac |\\n| 0.5 | — | B - BDEAS |\\n| 0.5 | — | C - O₂ Plasma |\\n| 1 | — | A - Hacac |\\n| 1 | — | B - BDEAS |\\n| 1 | 0.001 | C - O₂ Plasma |\\n| 1.5 | 0.001 | A - Hacac |\\n| 1.5 | — | B - BDEAS |\\n| 1.5 | — | C - O₂ Plasma |\\n| 2 | — | A - Hacac |\\n| 2 | — | B - BDEAS |\\n| 2 | 0.004 | C - O₂ Plasma |\\n| 2.5 | 0.001 | A - Hacac |\\n| 2.5 | — | B - BDEAS |\\n| 2.5 | — | C - O₂ Plasma |\\n| 3 | — | A - Hacac |\\n| 3 | — | B - BDEAS |\\n| 3 | 0.004 | C - O₂ Plasma |\\n| 3.5 | 0.001 | A - Hacac |\\n| 3.5 | — | B - BDEAS |\\n| 3.5 | — | C - O₂ Plasma |\\n| 4 | — | A - Hacac |\\n| 4 | 0.21 | B - BDEAS |\\n| 4 | 0.09 | C - O₂ Plasma |\\n| 4.5 | 0.12 | A - Hacac |\\n| 4.5 | — | B - BDEAS |\\n| 4.5 | — | C - O₂ Plasma |\\n| 5 | — | A - Hacac |\\n| 5 | 0.31 | B - BDEAS |\\n| 5 | 0.19 | C - O₂ Plasma |\\n| 5.5 | 0.21 | A - Hacac |\\n| 5.5 | — | B - BDEAS |\\n| 5.5 | — | C - O₂ Plasma |\\n| 6 | — | A - Hacac |\\n| 6 | 0.42 | B - BDEAS |\\n| 6 | 0.29 | C - O₂ Plasma |\\n| 6.5 | — | A - Hacac |\\n| 6.5 | — | B - BDEAS |\\n| 6.5 | — | C - O₂ Plasma |\\n| 7 | — | A - Hacac |\\n| 7 | 0.52 | B - BDEAS |\\n| 7 | 0.43 | C - O₂ Plasma |\\n| 7.5 | — | A - Hacac |\\n| 7.5 | — | B - BDEAS |\\n| 7.5 | — | C - O₂ Plasma |\\n| 8 | — | A - Hacac |\\n| 8 | 0.62 | B - BDEAS |\\n| 8 | — | C - O₂ Plasma |\\n| 8.5 | — | A - Hacac |\\n| 8.5 | — | B - BDEAS |\\n| 8.5 | 0.50 | C - O₂ Plasma |\\n| 9 | — | A - Hacac |\\n| 9 | 0.72 | B - BDEAS |\\n| 9 | — | C - O₂ Plasma |\\n| 9.5 | — | A - Hacac |\\n| 9.5 | — | B - BDEAS |\\n| 9.5 | 0.60 | C - O₂ Plasma |\\n| 10 | — | A - Hacac |\\n| 10 | — | B - BDEAS |\\n| 10 | — | C - O₂ Plasma |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It implies the as-deposited film from BDEAS on SiO₂ is already more fully oxidized or denser than on Al₂O₃, requiring less further modification by the O₂ plasma.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Pulse A (Hacac): Apparent thickness decreases (ligand exchange/etch).\\n\\nPulse B (BDEAS): Apparent thickness increases (precursor adsorption/Si–O deposition).\\n\\nPulse C (O₂ plasma): Apparent thickness increases slightly (oxidation/ densification).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"On Al₂O₃, the Hacac pulse causes a significant thickness decrease, indicating active ligand-exchange or etching. On SiO₂, it causes little to no change. This reveals a critical balance which is Hacac is an effective surface modifier for Al₂O₃ (enabling subsequent ABC selectivity), but it also etches Al₂O₃, which could be detrimental if not tightly controlled. On SiO₂, it is inert, providing no benefit but also no harm.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This difference in behaviour allows both selective growth and gentle etch-back. In a pattern containing Al₂O₃ and SiO₂, the ABC cycles would grow SiO₂ only on the Al₂O₃ regions, while slightly thinning the Al₂O₃ and leaving the SiO₂ regions unchanged. This helps fill features on one material while cleaning unwanted film from the other, improving the overall pattern quality.\"}]}]","bbox":[{"panel_id":"a","x":41,"y":29,"width":478,"height":340},{"panel_id":"b","x":42,"y":399,"width":477,"height":362}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":519,"height":800,"image_format":"jpeg","image_sha256":"3385ebb59c5e68e5d4e3231535436ee1051b9c1347ffb38de15237ec24eec695","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_12.jpg","caption":"Figure 12. Calculated potential energy profiles for the reaction between $-\\mathrm{Si(OH)}_3$ species and surface $-\\mathrm{OH}$ group.","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_12","subset":"multiple-scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot relates reaction pathways and the energy changes along these different pathways between the transtition states, reactants and products\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Pathway | Energy (kcal/mol) |\\n|------------------|------------------|\\n| R | 0 |\\n| TS (a) | 20.8 |\\n| TS (b) | 30 |\\n| TS (c) | 34.5 |\\n| P(a) | -10.2 |\\n| P(b) | 7.3 |\\n| P(c) | 4.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Reaction between the −SiH3 Intermediate with the Surface −OH Group Followed by Oxidation. To grow a denser and purer SiO2 film via ALD, the −SiH3 intermediate species on the surface could react with a surface −OH group to form a −SiH2 group.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The calculated activation energy are\\n1. For Path a 36.8 kcal/mol\\n2. For Path b 37.1 kcal/mol\\n3. For path c is 41.9 kcal/mol\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Thermodynamically, this process is moderately endothermic with the calculated reaction energy of 10.3 kcal/mol. The structure of the final product (Pc)\\nexhibits a modest geometric strain with the O−Si−O angle of 117.1°, which deviates slightly from the typical angle of 109.8° expected for sp3 hybridization. The calculated Si−O distance is 1.679 Å in the final state, significantly longer than the corresponding values in SiO2 single crystal (1.610 Å)\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":600,"height":436}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_12.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":600,"height":436,"image_format":"jpeg","image_sha256":"d3c7e60df6491d10155af94ae808db7e9a3b1311ec3ca5747a5f52b32f4b078d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_13.jpg","caption":"Figure 13. Calculated potential energy profiles of the whole reaction.","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_13","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_13","subset":"multiple-scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a reaction pathway involving the dissociation of DSBAS (Dihydrogen Silicate Borate Ammonium Salt) into Si(OH)2* through various transition states (TS) and intermediates.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Pathway | Energy (kcal/mol) |\\n|----------------------------|----------------|\\n| OH* (DSBAS Dissociation) | 0 |\\n| TS (DSBAS Dissociation) | 6.1 |\\n| SiH₃ | -5 |\\n| TS (H₂ elimination Path a) | 36.8 |\\n| TS (H₂ elimination Path b) | 41.9 |\\n| TS (H₂ elimination Path c) | 37.1 |\\n| TS (oxidation) | 12.7 |\\n| SiH₂ | -25 |\\n| SiH₂(OH)* | -121 |\\n| TS (Oxidation) |-109.2 |\\n| SiH(OH)₂ | -225 |\\n| TS (Oxidation) | -219.5 |\\n| Si(OH)₃ | -340 |\\n| TS (H₂O elimination Path a)| -319.2 |\\n| TS (H₂O elimination Path b)| -310 |\\n| TS (H₂O elimination Path c)| -305.5 |\\n| Si(OH)₂* (Path a) | -330 |\\n| Si(OH)₂* (Path b) | -340 |\\n| Si(OH)₂* (Path c) | -350 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALD process is initiated by the dissociative chemisorption of DSBAS, which is both thermochemically and kinetically facile. Elimination of H2 through reaction between the resultant −SiH3 species and a nearby surface hydroxyl group is kinetically prohibitive. Thus, further reactions along this pathway can be essentially ruled out.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Although there are three possible pathways for the −Si(OH)3 species to react with the adjacent surface hydroxyl groups, only one of them is both\\nthermodynamically and kinetically favorable, which leads to growing a SiO2 thin film in a crystalline structure\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thin film deposited with DSBAS and ozone to be dense and conformal and suitable for low-temperature deposition of SiO2 films.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1077,"height":478}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_13.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":1077,"height":478,"image_format":"jpeg","image_sha256":"2ae4e53d80adf1fd929e683fdf5ce1a3229e119f28f3d0dc1acd1d6af6f2b632","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_7.jpg","caption":"Figure 7. Calculated potential energy profiles for the reaction between $-\\mathrm{SiH}_3$ species and surface $-\\mathrm{OH}$ group.","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_7","subset":"multiple-scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart illustrates a reaction pathway with energy changes at various points, including reactants (R), transition state (TS), and products (P) for three reaction pathways - a, b, c.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Pathway | Energy (kcal/mol) |\\n|------------------|------------------|\\n| R | 0 |\\n| TS (a) | 36.8 |\\n| TS (b) | 37.1 |\\n| TS (c) | 41.9 |\\n| P(a) | -22 |\\n| P(b) | 11 |\\n| P(c) | 1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. For Path a = 36.8 kcal/mol\\n2. For path b = 37.1 kcal/mol\\n3. For path c = 41.9 kcal/mol\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Process b was found to be modestly endothermic with the reaction energy of 0.2 kcal/mol and for path C thermodynamically, the process is moderately endothermic with the calculated reaction energy of 10.3 kcal/mol\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"From the figure, path a and path c have the same transition state energy profile.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":600,"height":434}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":600,"height":434,"image_format":"jpeg","image_sha256":"189c0b8f867bdba82ac94ef71ab2f87a02ea6d1d10220b07468c30ba14eec450","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_3.jpg","caption":"Figure 3. (a) Mass change after the TMA exposure $(\\Delta M_{\\mathrm{TMA}})$ , mass change after the HF exposure $(\\Delta M_{\\mathrm{HF}})$ and mass change per cycle (MCPC) versus number of ALE cycles at $300^{\\circ}\\mathrm{C}$ . (b) $\\Delta M_{\\mathrm{TMA}} / \\mathrm{MCPC}$ ratio versus number of ALE cycles.","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_3","subset":"multiple-scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"multiple scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Evolution of mass changes during Al₂O₃ ALE at 300 °C, showing the mass change after TMA exposure (ΔM_TMA), the mass change after HF exposure (ΔM_HF), and the mass change per cycle (MCPC). After a short nucleation period, ΔM_TMA and ΔM_HF reach constant values, resulting in a steady-state MCPC of approximately −15.9 ng/(cm²·cycle).\"},{\"panel_id\":\"b\",\"text\":\"ΔM_TMA/MCPC ratio as a function of ALE cycles, which stabilizes at approximately 1.8 after the first three cycles. This steady ratio is used to define the stoichiometry of the ALE reactions and indicates consistent, repeatable mass changes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of cycles | ΔM_HF (ng/cm²) | MCPC (ng/(cm²·cycle)) | ΔM_TMA (ng/cm²) |\\n|------------------|----------------|-----------------------|------------------|\\n| 0 | ~35 | ~ -15 | ~ -30 |\\n| 20 | ~15 | ~ -15 | ~ -30 |\\n| 40 | ~15 | ~ -15 | ~ -30 |\\n| 60 | ~15 | ~ -15 | ~ -30 |\\n| 80 | ~15 | ~ -20 | ~ -30 |\\n| 100 | ~15 | ~ -15 | ~ -30 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of cycles | ΔM_TMA / MCPC |\\n|------------------|---------------|\\n| 0 | ~0.5 |\\n| 20 | ~2.0 |\\n| 40 | ~2.0 |\\n| 60 | ~2.0 |\\n| 80 | ~2.0 |\\n| 100 | ~2.0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This value can be used to calculate the stoichiometry of the reactions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For every cycle the mass changes are constant showing the self-limiting and controlable behaviour of ALE.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that there are some defects on the substrate to which HF can adsorb. Similar for TMA.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A near-constant ratio indicates that the TMA-related mass change scales proportionally with the net per-cycle mass change. This suggests the TMA half-reaction contribution remains consistent across most cycles. Such behavior is consistent with a stable surface chemistry after the initial transient.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Monitor whether ΔM_TMA/MCPC remains near ~2\\n-Flag sustained drift away from this value\\n-Treat early outliers as startup behavior and focus on the stable regime\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A constant ratio of ~1.8 indicates stable reaction stoichiometry throughout the ALE process.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughness changes usually alter surface site density.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ΔMTMA/MCPC ratio shows a steady-state value of 1.8 after the first three ALE cycles. The ΔMTMA/MCPC ratio will be employed to define the stoichiometry of the Al2O3 ALE reactions\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After a short nucleation period, MCPC attains a steady state value of −15.9 ng/(cm2 cycle).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"First two cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"First three cycles → ΔMTMA/MCPC increases, After three cycles → ratio becomes steady\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A constant MCPC shows that the mass change per cycle is reproducible and self-limiting.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ΔMTMA/MCPC ratio provides a measure of the relative mass contribution from TMA during each cycle. By monitoring this ratio, researchers can define the stoichiometry of the ALE reactions and verify that the process remains consistent across cycles. A stable ratio ensures predictable etching behavior and allows optimization of process parameters for precise Al₂O₃ removal.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mass change per cycle remains relatively constant throughout the number of cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As we can see in the figure, the difference between the mass change after HF exposure and the mass change after TMA exposure leads to the MCPC being closest to the TMA mass change values, meaning that TMA exposure has the greatest impact on the mass change per cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This means that the value of the last cycle is more negative than that of the previous one. For this reason, the difference between the two is still negative.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 180 ng/cm² is removed.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The MCPC is calculated by adding both the ΔM's of the TMA and HF subcycles together.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ΔM_HF is the mass change measured after the HF half-reaction. ΔM_TMA is the mass change measured after the TMA half-reaction. MCPC is the net mass change over a full ALE cycle, reflecting the combined outcome of both steps.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Most stable: ΔM_HF, which stays near ~15 ng/cm² after the initial cycle\\n-Also largely stable: ΔM_TMA around −30 ng/cm²\\n-Largest deviation: MCPC, which shows a deeper negative point near ~80 cycles\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first cycles establish the initial AlF₃ surface layer on the hydroxylated Al₂O₃ substrate (nucleation period).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ΔM_TMA (blue): mass change after TMA exposure; ΔM_HF (red): mass change after HF exposure; MCPC (black): total mass change per cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The constant values over 100 cycles demonstrate highly reproducible, steady-state etching behavior.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. HF Exposure: Fluorinates the Al₂O₃ surface, forming a non-volatile AlF₃-like layer (mass gain).\\n\\n2. Purge: Removes excess HF and byproducts.\\n\\n3. TMA Exposure: Performs ligand-exchange, converting the AlF₃ layer to volatile species that desorb (mass loss).\\n\\n4. Purge: Clears volatile etch products and residual TMA.\\nMeasuring mass change after each half-cycle with a quartz crystal microbalance (QCM) allows direct, real-time monitoring of the fluorination and ligand-exchange reactions. This confirms each step is self-limiting and enables precise control over the etch amount per cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process at 300°C is preferable for consistent etch rate. At lower temperatures, the reaction kinetics are slower, potentially leading to incomplete reactions and longer transients before stabilization. The 300°C data shows stable ΔM_TMA and ΔM_HF values after few cycles, indicating rapid achievement of steady-state surface conditions, which ensures a reproducible etch rate critical for multi-cycle etching.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The stable mass changes imply a highly suitable process. The consistent, self-limiting half-reactions guarantee uniform etching per cycle, enabling precise depth control (critical for the 10 nm target). Furthermore, the self-limiting nature ensures perfect conformality in high-aspect-ratio trenches, as reactions proceed equally on all surfaces, preventing lateral etching or bowing.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"MCPC is defined by mass change after TMA and HF exposure. MCPC = ΔMTMA + ΔMHF.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"13 ng/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"-29 ng/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"16 ng/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"According to the authors, this ratio can be used to gain information about the stoichiometry of the ALE reactions that occur on the Al2O3 substrate.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A positive ΔMHF means the HF step increases the surface mass, consisting with fluorinating the surface. A negative ΔMTMA means the TMA step decreases the surface mass, indicating it removes material by converting the surface species into volatile products that leave the surface. Overall, HF builds a fluorinated layer, and TMA strips it.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All three remain relatively steady throughout the experiment. ΔM_HF stays slightly positive and ΔM_TMA remains slightly negative with only small drifts, while MCPC stays near a low positive value. The trends suggest that the etching mechanism does not significantly change over time.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"ΔM_HF, ΔM_TMA, MCPC.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the figure shows that after an initial nucleation period, both ΔMTMA and ΔMHF become very constant, indicating that the ALE process has reached a steady state. This steady behavior demonstrates the self-limiting nature of the sequential TMA and HF reactions.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":1,"width":670,"height":300},{"panel_id":"b","x":0,"y":311,"width":672,"height":377}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":675,"height":691,"image_format":"jpeg","image_sha256":"f7514a90d62df5b54ec1a4b0b8cc09f8ec265cb5dffc3fb575f684b5da502e1f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_9.jpg","caption":"Figure 9. X-ray reflectivity and spectroscopic ellipsometry measurements of $\\mathrm{Al}_2\\mathrm{O}_3$ film thickness versus number of $\\mathrm{Al}_2\\mathrm{O}_3$ ALE cycles for initial $\\mathrm{Al}_2\\mathrm{O}_3$ ALD films grown using $150\\mathrm{Al}_2\\mathrm{O}_3$ ALD cycles.","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_9","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_9","subset":"multiple-scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multiple line chart shows Al₂O₃ thickness as a function of the number of cycles at 300 °C. Thickness decreases approximately linearly with increasing cycles. Measurements from XRR and SE closely agree across the full range, indicating consistent thickness reduction per cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of cycles | Thickness (Å), XRR | Thickness (Å), SE |\\n|------------------|--------------------|--------------------|\\n| 0 | ~170 | ~165 |\\n| 50 | ~130 | ~135 |\\n| 100 | ~100 | ~105 |\\n| 200 | ~50 | ~55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows both X-ray reflectivity and ellipsometry measurements of Al2O3 films.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For both growth temperatures (200 °C and 300 °C), Al2O3 thickness decreases as the number of etching cycles increases.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The highest deposition rate is achieved at 200 degrees C as there the initial thickness is higher.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Such a difference is not visible as for both the substrates the slope is equal.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"100 cycles of etching.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In this specific instance both SE and XRR yield the same thicknesses.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thickness is plotted only at specific integer cycle counts rather than continuously in time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The difference is largest at 200 ALE cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the same number of ALE cycles, the thickness values at 200 °C are consistently higher than those at 300 °C. This difference is visible at intermediate and high cycle counts. The separation between the curves persists across the full range.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Plotting thickness versus cycle number allows direct tracking of material removal as processing proceeds. It provides a simple way to compare outcomes under different conditions. This is useful for assessing repeatability across cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, both techniques yield an etch rate of 0.46 Å/cycle at 300°C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The slightly higher y-intercepts (~142 Å vs. 141 Å measured) result from mass gain during the nucleation period of the first ALE cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the growth temperature does not affect the etch rate. Films grown at 200°C and 300°C both exhibit identical etch rates of 0.46 Å/cycle when etched at 300°C. This indicates the ALE process is determined by the etching temperature and chemistry, not the initial film deposition conditions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Open red circles: XRR measurements for Al₂O₃ grown at 300°C\\nFilled blue triangles: SE measurements for Al₂O₃ grown at 300°C\\nOpen black squares: XRR measurements for Al₂O₃ grown at 200°C\\nFilled green triangles: SE measurements for Al₂O₃ grown at 200°C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Begin an ALE cycle (HF/TMA exposures) on the Al₂O₃ film.\\n\\n2. After the cycle completes, pause the process and allow conditions to stabilize.\\n\\n3. Perform an SE measurement scan over a range of photon energies.\\n\\n4. Fit the SE data with an optical model to extract the new film thickness.\\nThis sequence integrates metrology directly into the process flow, enabling real-time, non-destructive monitoring of etch depth without breaking vacuum.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For sub-Å precision on a 20 Å film, 200°C is preferable. The slower rate provides the necessary resolution for fine trimming, despite the longer process time.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Higher temperature increases the etch rate. The fundamental reason is the increased thermal energy, which accelerates the kinetics of both the surface fluorination (HF) and ligand-exchange (TMA) reactions, allowing each cycle to remove material more completely and rapidly.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This capability allows precise tuning of a transistor's threshold voltage (Vₜ). The gate oxide thickness directly influences Vₜ; by using ALE to trim the Al₂O₃ dielectric layer by a few Ångströms, the Vₜ can be adjusted post-deposition to meet exact specifications, improving chip performance and yield.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The initial Al2O3 films grown are\\n1. At 300 °C, it is 141 Å\\n2. At 200 °C, it is 170 Å\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film thickness from XRR versus number of ALE cycles yields an etch rate of 0.46 Å/cycle. Thenspectroscopic ellipsometry (SE) measurements on these same samples also yield an etch rate of 0.46 Å/cycle. In addition, the etch rates determined by XRR and SE are similar to the etch rate obtained by the in situ QCM experiments at at 300 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"These slightly larger thicknesses originate from the mass gain that occurs during the nucleation\\nof the ALE process on the first ALE cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200 °C, 0 cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"By taking the thickness loss over a cycle interval and dividing by the number of cycles. From 0 to 200 cycles, 300 °C sample drops from 140 Å to 49 Å, so (140−49)/200=0.46 Å/cycle. At 200 °C, XRR gives (167−84)/200 = 0.42. SE measurement gives a slightly different result: (170−84)/200 = 0.43 Å/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For both temperatures, Al₂O₃ thickness decreases approximately linearly as the number of cycles increases. This indicates a steady removal of material per cycle rather than abrupt or saturating behavior.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"X-ray reflectivity (XRR) and spectroscopic ellipsometry (SE).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"200 °C, 300 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch rate is the same for both films, approximately 0.46 Å/cycle, showing that initial growth temperature does not affect ALE etch rate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Film thickness by X-ray reflectivity (XRR), Film thickness by spectroscopic ellipsometry (SE), Refractive index (n ≈ 1.67–1.68)\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both XRR and SE measurements show a consistent linear decrease in Al₂O₃ thickness with ALE cycles, confirming the etch rate is uniform and independent of initial ALD film growth temperature. This consistency demonstrates that the ALE process can be reliably used for precise, controllable thinning of Al₂O₃ films in applications requiring accurate nanoscale thickness control.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":670,"height":536}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:img_caption"},"width":670,"height":536,"image_format":"jpeg","image_sha256":"6e616a6c63a407409c59e74a120706b9b8c8858010c8521c0dfab0fbbb386b33","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_6.jpg","caption":"Figure 6. Etched thickness of $\\mathrm{Al}_2\\mathrm{O}_3$ , $\\mathrm{SiO}_2$ , and $\\mathrm{Si}_3\\mathrm{N}_4$ as a function of the number of etch cycles at $460^{\\circ}\\mathrm{C}$ . The $\\mathrm{NbF}_5$ and $\\mathrm{CCl_4}$ pulse times are 3 and $0.5\\mathrm{~s}$ , respectively. The $\\mathrm{N}_2$ purge time was kept constant at 6 s.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_6","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_6","subset":"multiple-scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the etched thickness of Al2O3 (ALD), SiO2 (TOx), and Si3N4 (LPCVD) as a function of etch cycles. For Al2O, the thickness increases linearly with etch cycles. For Si3N4 (LPCVD) and SiO2 (TOx), no etching is observed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| etch cycles | etched thickness [nm] | Film |\\n|---|---|---|\\n| 1 | 0,40 | Al2O3 (ALD) |\\n| 60 | 5,49 | Al2O3 (ALD) |\\n| 100 | 12,19 | Al2O3 (ALD) |\\n| 149 | 17,05 | Al2O3 (ALD) |\\n| 0 | 0,51 | SiO2(TOx) |\\n| 60 | 0,48 | SiO2(TOx) |\\n| 100 | 0,44 | SiO2(TOx) |\\n| 150 | 0,44 | SiO2(TOx) |\\n| 0 | 0,32 | Si3N4(LPCVD) |\\n| 50 | 0,40 | Si3N4(LPCVD) |\\n| 100 | 0,44 | Si3N4(LPCVD) |\\n| 150 | 0,44 | Si3N4(LPCVD) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"0.11 nm/cycle. The trendlineshown on the image is y = 0.11x - 0.49. The slope of the line represents the rate of removal per cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SiO2 and Si3N4.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"EPC is constant (as the trendline is linear)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"98%\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":450,"height":414}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"multiple scatter plot","caption_source":"content.json:image_caption"},"width":450,"height":414,"image_format":"jpeg","image_sha256":"e6382c1b84c8103869e81e50a730aea1e224e985378fbe084c63756a0a203fcc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/network-diagram/test/metadata.jsonl b/subsets/network-diagram/test/metadata.jsonl index 8564b0bea0adc8a4145d373a64c8587d2e22f370..7538c209f418ac20d9163d0d0c8485c41317aff6 100644 --- a/subsets/network-diagram/test/metadata.jsonl +++ b/subsets/network-diagram/test/metadata.jsonl @@ -1,2 +1,2 @@ -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_fig2.jpg","caption":"Fig.2-Two-input-one-output FNN model with two hidden layers.","id":"test/atomic-layer-etching/simulation-usecase/11/fig2","sample_id":"atomic-layer-etching/simulation-usecase/11/fig2","subset":"network-diagram","split":"test","classification":[{"panel_id":"a","label":"network diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"network diagram","caption_source":"content.json:img_caption"},"width":614,"height":433,"image_format":"jpeg","image_sha256":"cd960a1af61e0e98fd8e0b064c79009063d12cb77c022a92be502f450b109242","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":5,"width":604,"height":427}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A neural network architecture with input nodes, hidden layers, and an output node.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"x₁ represents temperature (K) and x₂ represents pressure (Pa) of the ALE process operating conditions.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Two identical FNN architectures are trained separately for Step A (HF fluorination) and Step B (TMA etching). Each model takes temperature and pressure as inputs and predicts the corresponding half-cycle time. The models are trained on 80% of kMC simulation data and validated on the remaining 20%. Both use 50 neurons in each hidden layer and the exponential linear unit (ELU) activation function.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The exponential linear unit (ELU) activation function is used for effective gradient propagation and smoother prediction compared to other activation functions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The FNN predicts half-cycle times in less than one second, compared to approximately 20 minutes per kMC simulation, enabling real-time process control applications.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_9.jpg","caption":"Fig. 9. An artificial neural network architecture consisting of an input, output, and hidden layer. In this work, the input layer has $l = 3$ inputs ( $x_{1}$ , $x_{2}$ , and $x_{3}$ ), the hidden layer is defined with $p = 20$ neurons ( $h_{j}$ for $j = 1, 2, \\ldots, p$ ), and the output layer consists of one output ( $\\hat{y}$ ).","id":"test/atomic-layer-etching/simulation-usecase/34/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_9","subset":"network-diagram","split":"test","classification":[{"panel_id":"a","label":"network diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"network diagram","caption_source":"content.json:image_caption"},"width":983,"height":536,"image_format":"jpeg","image_sha256":"347051b21b7fbff1ec1c993b597d645af43f4bdc75e126fc5a49735660b5c36b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":983,"height":536}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_fig2.jpg","caption":"Fig.2-Two-input-one-output FNN model with two hidden layers.","id":"test/atomic-layer-etching/simulation-usecase/11/fig2","sample_id":"atomic-layer-etching/simulation-usecase/11/fig2","subset":"network-diagram","split":"test","classification":[{"panel_id":"a","label":"network diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A neural network architecture with input nodes, hidden layers, and an output node.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"x₁ represents temperature (K) and x₂ represents pressure (Pa) of the ALE process operating conditions.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Two identical FNN architectures are trained separately for Step A (HF fluorination) and Step B (TMA etching). Each model takes temperature and pressure as inputs and predicts the corresponding half-cycle time. The models are trained on 80% of kMC simulation data and validated on the remaining 20%. Both use 50 neurons in each hidden layer and the exponential linear unit (ELU) activation function.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The exponential linear unit (ELU) activation function is used for effective gradient propagation and smoother prediction compared to other activation functions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The FNN predicts half-cycle times in less than one second, compared to approximately 20 minutes per kMC simulation, enabling real-time process control applications.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":5,"width":604,"height":427}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"network diagram","caption_source":"content.json:img_caption"},"width":614,"height":433,"image_format":"jpeg","image_sha256":"cd960a1af61e0e98fd8e0b064c79009063d12cb77c022a92be502f450b109242","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_9.jpg","caption":"Fig. 9. An artificial neural network architecture consisting of an input, output, and hidden layer. In this work, the input layer has $l = 3$ inputs ( $x_{1}$ , $x_{2}$ , and $x_{3}$ ), the hidden layer is defined with $p = 20$ neurons ( $h_{j}$ for $j = 1, 2, \\ldots, p$ ), and the output layer consists of one output ( $\\hat{y}$ ).","id":"test/atomic-layer-etching/simulation-usecase/34/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_9","subset":"network-diagram","split":"test","classification":[{"panel_id":"a","label":"network diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":983,"height":536}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"network diagram","caption_source":"content.json:image_caption"},"width":983,"height":536,"image_format":"jpeg","image_sha256":"347051b21b7fbff1ec1c993b597d645af43f4bdc75e126fc5a49735660b5c36b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/periodic-table-map/test/metadata.jsonl b/subsets/periodic-table-map/test/metadata.jsonl index 76bc05e1c34142e4aaf10d85f673da1c55f56ac1..309ccd886a26d0ccf02ee7f54be34d7175b357b7 100644 --- a/subsets/periodic-table-map/test/metadata.jsonl +++ b/subsets/periodic-table-map/test/metadata.jsonl @@ -1,2 +1,2 @@ -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_47_figure_5.jpg","caption":"Figure 5. Pidc table of metals and semi-metals, highiging those that have ben deosited as elements or metal lloys by thmal ALD (solid black box) or pulsed-CVD (dashed black box). Atomic numbers are shown above the atom symbols and Pauling electronegativities are shown below for values with two decimal places, the oxidation state is: I for groups 1 and 11, II for groups 2, 4-10 and 12, III for groups 3 and 13, and IV for group 14. Non-metals (including semi-metals) and elements without significant natural abundance are shown in white. Transition metals are shaded in light grey, while other metals are dark grey. Reproduced with permission.[72] Copyright 2013, Elsevier.","id":"test/atomic-layer-deposition/simulation-usecase/47/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/47/figure_5","subset":"periodic-table-map","split":"test","classification":[{"panel_id":"a","label":"periodic table map"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/Simon D. Elliott et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"periodic table map","caption_source":"content.json:image_caption"},"width":1011,"height":622,"image_format":"jpeg","image_sha256":"69acfce56d4f7e25be15e1567d2679afe640a016727db9fa0588b915f8556b1e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1011,"height":622}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_21_figure_3.jpg","caption":"Figure 3. Color map of surface binding energies $(E_0)$ of elemental materials, from values independently given by Yamamura and Tawara. Materials with high $E_0$ values, such as carbon and the refractory metals, are most likely to exhibit high synergy in directional ALE.","id":"test/atomic-layer-etching/simulation-usecase/21/figure_3","sample_id":"atomic-layer-etching/simulation-usecase/21/figure_3","subset":"periodic-table-map","split":"test","classification":[{"panel_id":"a","label":"periodic table map"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/Review Paper -- Atomic Layer Etching Rethinking the Art of Etch.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"periodic table map","caption_source":"content.json:img_caption"},"width":1408,"height":375,"image_format":"jpeg","image_sha256":"5d71082e5cdfe8dbaa25741a238d55079e439f3b749a9b386626a292f159f4b6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":1407,"height":374}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The periodic table is color-coded to show surface binding energy E₀ for elemental solids using discrete ranges from <2 eV to >7 eV. Elements with high E₀, including carbon and refractory transition metals, occupy the darkest bins, indicating strong lattice cohesion and resistance to removal. Alkali metals and weakly bound elements fall into the lowest categories, reflecting low surface stability. The map provides a qualitative basis for anticipating where strong chemical–physical synergy is required for effective directional ALE\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Element | Surface binding energy E₀ (categorical) |\\n|---------|------------------------------------------|\\n| H, Li,Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Zn, Cd, Hg, Tl, Po, Br, I, At, He, Ne, Ar, Kr, Xe, Rn| < 2 eV |\\n| Be, Sc, Y, La, Ti, Cr, Mn, Fe, Co, Ni, Pd, Cu, Ag, Au,Al, Si, Ge, Sn, N, P, As,Sb, Cl| 2–5 eV |\\n| B, O, F, V, Rh, Pt, | 5-6 eV |\\n| Zr, Mo, Tc, Ru, Hf, Ir | 6-7 eV |\\n| C, Nb, Ta, W, Re, Os | 7+ eV |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Materials with low surface binding energies can often be removed using chemically driven or thermally assisted steps, since only modest bond weakening is required for detachment. In contrast, high-E₀ materials such as refractory metals and carbon require a deliberate sequence in which surface chemistry first reduces local binding strength, followed by directional energy input to complete removal. This separation of chemical modification and physical activation enables atomic-scale control even for strongly bound solids.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Refractory transition metals and carbon cluster in the highest E₀ ranges.\\n-Alkali metals appear in the lowest E₀ category, indicating weak surface cohesion.\\n-Several p-block elements (e.g., B, O, F) show elevated E₀ relative to neighbors.\\n-Intermediate E₀ values dominate among common semiconductors and metals, suggesting mixed chemical and physical contributions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Carbon and refractory transition metals (e.g., Ta, W, Re, Os).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_47_figure_5.jpg","caption":"Figure 5. Pidc table of metals and semi-metals, highiging those that have ben deosited as elements or metal lloys by thmal ALD (solid black box) or pulsed-CVD (dashed black box). Atomic numbers are shown above the atom symbols and Pauling electronegativities are shown below for values with two decimal places, the oxidation state is: I for groups 1 and 11, II for groups 2, 4-10 and 12, III for groups 3 and 13, and IV for group 14. Non-metals (including semi-metals) and elements without significant natural abundance are shown in white. Transition metals are shaded in light grey, while other metals are dark grey. Reproduced with permission.[72] Copyright 2013, Elsevier.","id":"test/atomic-layer-deposition/simulation-usecase/47/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/47/figure_5","subset":"periodic-table-map","split":"test","classification":[{"panel_id":"a","label":"periodic table map"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1011,"height":622}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/Simon D. Elliott et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"periodic table map","caption_source":"content.json:image_caption"},"width":1011,"height":622,"image_format":"jpeg","image_sha256":"69acfce56d4f7e25be15e1567d2679afe640a016727db9fa0588b915f8556b1e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_21_figure_3.jpg","caption":"Figure 3. Color map of surface binding energies $(E_0)$ of elemental materials, from values independently given by Yamamura and Tawara. Materials with high $E_0$ values, such as carbon and the refractory metals, are most likely to exhibit high synergy in directional ALE.","id":"test/atomic-layer-etching/simulation-usecase/21/figure_3","sample_id":"atomic-layer-etching/simulation-usecase/21/figure_3","subset":"periodic-table-map","split":"test","classification":[{"panel_id":"a","label":"periodic table map"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The periodic table is color-coded to show surface binding energy E₀ for elemental solids using discrete ranges from <2 eV to >7 eV. Elements with high E₀, including carbon and refractory transition metals, occupy the darkest bins, indicating strong lattice cohesion and resistance to removal. Alkali metals and weakly bound elements fall into the lowest categories, reflecting low surface stability. The map provides a qualitative basis for anticipating where strong chemical–physical synergy is required for effective directional ALE\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Element | Surface binding energy E₀ (categorical) |\\n|---------|------------------------------------------|\\n| H, Li,Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Zn, Cd, Hg, Tl, Po, Br, I, At, He, Ne, Ar, Kr, Xe, Rn| < 2 eV |\\n| Be, Sc, Y, La, Ti, Cr, Mn, Fe, Co, Ni, Pd, Cu, Ag, Au,Al, Si, Ge, Sn, N, P, As,Sb, Cl| 2–5 eV |\\n| B, O, F, V, Rh, Pt, | 5-6 eV |\\n| Zr, Mo, Tc, Ru, Hf, Ir | 6-7 eV |\\n| C, Nb, Ta, W, Re, Os | 7+ eV |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Materials with low surface binding energies can often be removed using chemically driven or thermally assisted steps, since only modest bond weakening is required for detachment. In contrast, high-E₀ materials such as refractory metals and carbon require a deliberate sequence in which surface chemistry first reduces local binding strength, followed by directional energy input to complete removal. This separation of chemical modification and physical activation enables atomic-scale control even for strongly bound solids.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Refractory transition metals and carbon cluster in the highest E₀ ranges.\\n-Alkali metals appear in the lowest E₀ category, indicating weak surface cohesion.\\n-Several p-block elements (e.g., B, O, F) show elevated E₀ relative to neighbors.\\n-Intermediate E₀ values dominate among common semiconductors and metals, suggesting mixed chemical and physical contributions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Carbon and refractory transition metals (e.g., Ta, W, Re, Os).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":1407,"height":374}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/Review Paper -- Atomic Layer Etching Rethinking the Art of Etch.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"periodic table map","caption_source":"content.json:img_caption"},"width":1408,"height":375,"image_format":"jpeg","image_sha256":"5d71082e5cdfe8dbaa25741a238d55079e439f3b749a9b386626a292f159f4b6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/phase-diagram/test/metadata.jsonl b/subsets/phase-diagram/test/metadata.jsonl index 4d5dc1cd61b232c242c36640b9378b2267767d02..e62459576041792929716f50f577a7b7a9d17c3f 100644 --- a/subsets/phase-diagram/test/metadata.jsonl +++ b/subsets/phase-diagram/test/metadata.jsonl @@ -1,2 +1,2 @@ -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_18_fig_1.jpg","caption":"FIG. 1. Schematic illustration of the temperature process window for thermal etching. From Lill et al., \"Etching of semiconductor devices,\" in Materials Science and Technology. Copyright 2019 by Wiley. Adapted with permission from Wiley.","id":"test/atomic-layer-etching/experimental-usecase/18/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/18/fig_1","subset":"phase-diagram","split":"test","classification":[{"panel_id":"a","label":"phase diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"phase diagram","caption_source":"content.json:img_caption"},"width":639,"height":478,"image_format":"jpeg","image_sha256":"d011a1b857e74c041f33a81f80699c8b0fc37504df3c2230c7e5d31bcff365f5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":6,"width":633,"height":471}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_18_fig_3.jpg","caption":"FIG. 3. Schematic illustration of the temperature process window for thermal isotropic ALE at constant temperature. Panel (a) shows the chemisorption of a reactant 1 without initiating etching representing a modification step in thermal ALE. In panel (b), this modified surface is exposed to a reactant 2, which results in a surface layer that desorbs at the given wafer temperature resulting in etching of the modified layer. From Lill et al., \"Etching of semiconductor devices,\" in Materials Science and Technology. Copyright 2019 by Wiley. Adapted with permission from Wiley.","id":"test/atomic-layer-etching/experimental-usecase/18/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/18/fig_3","subset":"phase-diagram","split":"test","classification":[{"panel_id":"a","label":"phase diagram"},{"panel_id":"b","label":"phase diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"phase diagram","caption_source":"content.json:img_caption"},"width":672,"height":903,"image_format":"jpeg","image_sha256":"e520132294b9e29d8ba71d3fbc93a6bf001e0509fa306192000b8220fd083849","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":1,"width":662,"height":423},{"panel_id":"b","x":4,"y":431,"width":665,"height":467}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_18_fig_1.jpg","caption":"FIG. 1. Schematic illustration of the temperature process window for thermal etching. From Lill et al., \"Etching of semiconductor devices,\" in Materials Science and Technology. Copyright 2019 by Wiley. Adapted with permission from Wiley.","id":"test/atomic-layer-etching/experimental-usecase/18/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/18/fig_1","subset":"phase-diagram","split":"test","classification":[{"panel_id":"a","label":"phase diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":6,"width":633,"height":471}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"phase diagram","caption_source":"content.json:img_caption"},"width":639,"height":478,"image_format":"jpeg","image_sha256":"d011a1b857e74c041f33a81f80699c8b0fc37504df3c2230c7e5d31bcff365f5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_18_fig_3.jpg","caption":"FIG. 3. Schematic illustration of the temperature process window for thermal isotropic ALE at constant temperature. Panel (a) shows the chemisorption of a reactant 1 without initiating etching representing a modification step in thermal ALE. In panel (b), this modified surface is exposed to a reactant 2, which results in a surface layer that desorbs at the given wafer temperature resulting in etching of the modified layer. From Lill et al., \"Etching of semiconductor devices,\" in Materials Science and Technology. Copyright 2019 by Wiley. Adapted with permission from Wiley.","id":"test/atomic-layer-etching/experimental-usecase/18/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/18/fig_3","subset":"phase-diagram","split":"test","classification":[{"panel_id":"a","label":"phase diagram"},{"panel_id":"b","label":"phase diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":1,"width":662,"height":423},{"panel_id":"b","x":4,"y":431,"width":665,"height":467}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"phase diagram","caption_source":"content.json:img_caption"},"width":672,"height":903,"image_format":"jpeg","image_sha256":"e520132294b9e29d8ba71d3fbc93a6bf001e0509fa306192000b8220fd083849","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/phase-diagram/train/metadata.jsonl b/subsets/phase-diagram/train/metadata.jsonl index de6c29d4b564dbed0e617b3a6f2cf32632d14a52..d7096af817c9ffdd1e22264b35e123c9907a964c 100644 --- a/subsets/phase-diagram/train/metadata.jsonl +++ b/subsets/phase-diagram/train/metadata.jsonl @@ -1,2 +1,2 @@ -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_23_fig_1.jpg","caption":"FIG. 1. Schematic illustration of the temperature process window for thermal etching. From Lill et al., \"Etching of semiconductor devices,\" in Materials Science and Technology. Copyright 2019 by Wiley. Adapted with permission from Wiley.","id":"train/atomic-layer-etching/simulation-usecase/23/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/23/fig_1","subset":"phase-diagram","split":"train","classification":[{"panel_id":"a","label":"phase diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/Review Paper -- Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"phase diagram","caption_source":"content.json:img_caption"},"width":639,"height":478,"image_format":"jpeg","image_sha256":"d011a1b857e74c041f33a81f80699c8b0fc37504df3c2230c7e5d31bcff365f5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":637,"height":472}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart illustrates the relationship between reaction rates and temperature, the process window for thermal etching is defined by the area of overlap of the rate curves for adsorption of the vapor molecules and desorption of the reaction products\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process window for thermal etching is defined by the area of overlap of the rate curves for adsorption of the vapor molecules and desorption of the reaction products as shown in the image.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As temperature increases, the chemisorption rate often decreases (because molecules bounce off before reacting), while the desorption rate always increases (because waste products leave faster).\\n For etching to work, both rates must be high enough at the same temperature, creating a small process window.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Molecular structure affects thermal etching because the shape and bonding of a molecule determine how easily it can adsorb, react, and release by-products from the surface. Many molecules are ineffective etchants because their structure does not support both efficient adsorption and fast desorption within the same temperature range.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Only a few reactants have a temperature range where both sticking and product removal occur efficiently, giving a very small process window.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_23_fig_3.jpg","caption":"FIG. 3. Schematic illustration of the temperature process window for thermal isotropic ALE at constant temperature. Panel (a) shows the chemisorption of a reactant 1 without initiating etching representing a modification step in thermal ALE. In panel (b), this modified surface is exposed to a reactant 2, which results in a surface layer that desorbs at the given wafer temperature resulting in etching of the modified layer. From Lill et al., \"Etching of semiconductor devices,\" in Materials Science and Technology. Copyright 2019 by Wiley. Adapted with permission from Wiley.","id":"train/atomic-layer-etching/simulation-usecase/23/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/23/fig_3","subset":"phase-diagram","split":"train","classification":[{"panel_id":"a","label":"phase diagram"},{"panel_id":"b","label":"phase diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/Review Paper -- Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"phase diagram","caption_source":"content.json:img_caption"},"width":672,"height":900,"image_format":"jpeg","image_sha256":"ff4b1707fb5a9c11ad96b650230ff23fb325f0ad77db3c02e05f69e65d91d50a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":429,"width":671,"height":468},{"panel_id":"a","x":2,"y":4,"width":669,"height":423}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image describes a two-step thermal Atomic Layer Etching (ALE) process controlled by temperature:Step 1 (Modification): Reactant 1 chemisorbs onto the surface at a specific temperature, modifying it without etching.\"},{\"panel_id\":\"b\",\"text\":\"Step 2 (Etching): Reactant 2 reacts with the modified surface at the same temperature, causing the modified layer to desorb, resulting in precise, isotropic etching of exactly one atomic layer. The process window is the narrow temperature range where both steps proceed in a self-limiting manner, enabling atomic-scale control.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Process Window | Temperature |\\n|----------------|------------|\\n| Chemisorption of reactant 1 | Reaction Rates |\\n| Desorption of reaction products 1 | Reaction Rates |\"},{\"panel_id\":\"b\",\"text\":\"| Process Window | Temperature |\\n|----------------|------------|\\n| Chemisorption and reaction of reactant 2 | Reaction Rates |\\n| Desorption of reaction products 2 | Reaction Rates |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It enables perfectly isotropic etching with atomic-layer precision, which is critical for creating extremely small, smooth, and uniform features in 3D chip architectures without the damage caused by plasma-based etching. More used in FinFETs or 3D NAND memorys\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Phase 1 is the Modification Step: Reactant 1 sticks to and chemically alters the surface without removing material. \\nPhase 2 is the Etching Step: Reactant 2 reacts with the altered surface, causing precisely one modified layer to vaporize and etch away.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In thermal isotropic ALE, both steps must occur at the same constant temperature. The process window is the single temperature where modification is complete and etching is spontaneous, making control more challenging than in processes with separate temperature steps.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The first step only changes the surface chemistry (e.g., converting a metal to a volatile compound), making it reactive but stable. \\nThis creates a sharp boundary between the modified top layer and the unmodified layer below. \\nThe second step then removes only this distinct top layer, ensuring exactly one atomic layer is etched per cycle.\"}]}]"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_23_fig_1.jpg","caption":"FIG. 1. Schematic illustration of the temperature process window for thermal etching. From Lill et al., \"Etching of semiconductor devices,\" in Materials Science and Technology. Copyright 2019 by Wiley. Adapted with permission from Wiley.","id":"train/atomic-layer-etching/simulation-usecase/23/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/23/fig_1","subset":"phase-diagram","split":"train","classification":[{"panel_id":"a","label":"phase diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart illustrates the relationship between reaction rates and temperature, the process window for thermal etching is defined by the area of overlap of the rate curves for adsorption of the vapor molecules and desorption of the reaction products\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process window for thermal etching is defined by the area of overlap of the rate curves for adsorption of the vapor molecules and desorption of the reaction products as shown in the image.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As temperature increases, the chemisorption rate often decreases (because molecules bounce off before reacting), while the desorption rate always increases (because waste products leave faster).\\n For etching to work, both rates must be high enough at the same temperature, creating a small process window.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Molecular structure affects thermal etching because the shape and bonding of a molecule determine how easily it can adsorb, react, and release by-products from the surface. Many molecules are ineffective etchants because their structure does not support both efficient adsorption and fast desorption within the same temperature range.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Only a few reactants have a temperature range where both sticking and product removal occur efficiently, giving a very small process window.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":637,"height":472}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/Review Paper -- Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"phase diagram","caption_source":"content.json:img_caption"},"width":639,"height":478,"image_format":"jpeg","image_sha256":"d011a1b857e74c041f33a81f80699c8b0fc37504df3c2230c7e5d31bcff365f5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_23_fig_3.jpg","caption":"FIG. 3. Schematic illustration of the temperature process window for thermal isotropic ALE at constant temperature. Panel (a) shows the chemisorption of a reactant 1 without initiating etching representing a modification step in thermal ALE. In panel (b), this modified surface is exposed to a reactant 2, which results in a surface layer that desorbs at the given wafer temperature resulting in etching of the modified layer. From Lill et al., \"Etching of semiconductor devices,\" in Materials Science and Technology. Copyright 2019 by Wiley. Adapted with permission from Wiley.","id":"train/atomic-layer-etching/simulation-usecase/23/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/23/fig_3","subset":"phase-diagram","split":"train","classification":[{"panel_id":"a","label":"phase diagram"},{"panel_id":"b","label":"phase diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image describes a two-step thermal Atomic Layer Etching (ALE) process controlled by temperature:Step 1 (Modification): Reactant 1 chemisorbs onto the surface at a specific temperature, modifying it without etching.\"},{\"panel_id\":\"b\",\"text\":\"Step 2 (Etching): Reactant 2 reacts with the modified surface at the same temperature, causing the modified layer to desorb, resulting in precise, isotropic etching of exactly one atomic layer. The process window is the narrow temperature range where both steps proceed in a self-limiting manner, enabling atomic-scale control.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Process Window | Temperature |\\n|----------------|------------|\\n| Chemisorption of reactant 1 | Reaction Rates |\\n| Desorption of reaction products 1 | Reaction Rates |\"},{\"panel_id\":\"b\",\"text\":\"| Process Window | Temperature |\\n|----------------|------------|\\n| Chemisorption and reaction of reactant 2 | Reaction Rates |\\n| Desorption of reaction products 2 | Reaction Rates |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It enables perfectly isotropic etching with atomic-layer precision, which is critical for creating extremely small, smooth, and uniform features in 3D chip architectures without the damage caused by plasma-based etching. More used in FinFETs or 3D NAND memorys\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Phase 1 is the Modification Step: Reactant 1 sticks to and chemically alters the surface without removing material. \\nPhase 2 is the Etching Step: Reactant 2 reacts with the altered surface, causing precisely one modified layer to vaporize and etch away.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In thermal isotropic ALE, both steps must occur at the same constant temperature. The process window is the single temperature where modification is complete and etching is spontaneous, making control more challenging than in processes with separate temperature steps.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The first step only changes the surface chemistry (e.g., converting a metal to a volatile compound), making it reactive but stable. \\nThis creates a sharp boundary between the modified top layer and the unmodified layer below. \\nThe second step then removes only this distinct top layer, ensuring exactly one atomic layer is etched per cycle.\"}]}]","bbox":[{"panel_id":"b","x":0,"y":429,"width":671,"height":468},{"panel_id":"a","x":2,"y":4,"width":669,"height":423}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/Review Paper -- Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"phase diagram","caption_source":"content.json:img_caption"},"width":672,"height":900,"image_format":"jpeg","image_sha256":"ff4b1707fb5a9c11ad96b650230ff23fb325f0ad77db3c02e05f69e65d91d50a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/pie-chart/train/metadata.jsonl b/subsets/pie-chart/train/metadata.jsonl index a0b2caceee7a317f65cfb267f969cf7f3439b9c6..1bd598b7a0b1ddd0fa7f5c9c9ad684a755a09ce2 100644 --- a/subsets/pie-chart/train/metadata.jsonl +++ b/subsets/pie-chart/train/metadata.jsonl @@ -1 +1 @@ -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_6_figure_6.jpg","caption":"Figure 6. Theoretical studies of ALD categorized based on the theoretical method and (a) thin film material and the ALD aspect under study, i.e., (b) precursors, (c) deposition characterization, and (d) reaction mechanisms.","id":"train/atomic-layer-deposition/simulation-usecase/6/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/6/figure_6","subset":"pie-chart","split":"train","classification":[{"panel_id":"a","label":"pie chart"},{"panel_id":"b","label":"pie chart"},{"panel_id":"c","label":"pie chart"},{"panel_id":"d","label":"pie chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"pie chart","caption_source":"content.json:img_caption"},"width":1084,"height":789,"image_format":"jpeg","image_sha256":"f176235c4bfe189fb2a1fe861a41e83cd5e1b957f8e717bdb8daa3ebaa922c60","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":8,"width":454,"height":377},{"panel_id":"b","x":546,"y":3,"width":533,"height":390},{"panel_id":"c","x":0,"y":415,"width":556,"height":373},{"panel_id":"d","x":571,"y":406,"width":509,"height":379}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The pie chart illustrates the percentage distribution of various materials used in a study.\"},{\"panel_id\":\"b\",\"text\":\"The pie chart shows how different precursors are studied.\"},{\"panel_id\":\"c\",\"text\":\"The pie chart depicts the distribution of different characterization methods employed in the study.\"},{\"panel_id\":\"d\",\"text\":\"The pie chart illustrates the prevalence of different reaction mechanisms studied.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Material | Percentage |\\n|----------|------------|\\n| Al2O3 | 34% |\\n| HfO2 | 18% |\\n| TiO2 | 12% |\\n| Cu/CuO | 10% |\\n| ZrO2 | 12% |\\n| ZnO | 4% |\\n| Others | 10% |\"},{\"panel_id\":\"b\",\"text\":\"| Precursor | Percentage |\\n|------------|------------|\\n| DFT | 83% |\\n| GCM/CAMD | 17% |\"},{\"panel_id\":\"c\",\"text\":\"| Characterization Method | Percentage |\\n|-------------------------|------------|\\n| DFT | 30% |\\n| Mass balance | 20% |\\n| Monte Carlo | 30% |\\n| CFD | 5% |\\n| ANSYS Fluent | 5% |\\n| LBM | 5% |\\n| GCM | 5% |\"},{\"panel_id\":\"d\",\"text\":\"| Reaction Mechanism | Percentage |\\n|---------------------|------------|\\n| DFT | 92% |\\n| MD | 4% |\\n| Monte Carlo | 4% |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The most used characterization methods for depositions are DFT and monte carlo simulations.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Reaction mechanisms are usually studied using DFT.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, this is true.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Al2O3 is the most researched with 34%.\"}]}]"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_6_figure_6.jpg","caption":"Figure 6. Theoretical studies of ALD categorized based on the theoretical method and (a) thin film material and the ALD aspect under study, i.e., (b) precursors, (c) deposition characterization, and (d) reaction mechanisms.","id":"train/atomic-layer-deposition/simulation-usecase/6/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/6/figure_6","subset":"pie-chart","split":"train","classification":[{"panel_id":"a","label":"pie chart"},{"panel_id":"b","label":"pie chart"},{"panel_id":"c","label":"pie chart"},{"panel_id":"d","label":"pie chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The pie chart illustrates the percentage distribution of various materials used in a study.\"},{\"panel_id\":\"b\",\"text\":\"The pie chart shows how different precursors are studied.\"},{\"panel_id\":\"c\",\"text\":\"The pie chart depicts the distribution of different characterization methods employed in the study.\"},{\"panel_id\":\"d\",\"text\":\"The pie chart illustrates the prevalence of different reaction mechanisms studied.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Material | Percentage |\\n|----------|------------|\\n| Al2O3 | 34% |\\n| HfO2 | 18% |\\n| TiO2 | 12% |\\n| Cu/CuO | 10% |\\n| ZrO2 | 12% |\\n| ZnO | 4% |\\n| Others | 10% |\"},{\"panel_id\":\"b\",\"text\":\"| Precursor | Percentage |\\n|------------|------------|\\n| DFT | 83% |\\n| GCM/CAMD | 17% |\"},{\"panel_id\":\"c\",\"text\":\"| Characterization Method | Percentage |\\n|-------------------------|------------|\\n| DFT | 30% |\\n| Mass balance | 20% |\\n| Monte Carlo | 30% |\\n| CFD | 5% |\\n| ANSYS Fluent | 5% |\\n| LBM | 5% |\\n| GCM | 5% |\"},{\"panel_id\":\"d\",\"text\":\"| Reaction Mechanism | Percentage |\\n|---------------------|------------|\\n| DFT | 92% |\\n| MD | 4% |\\n| Monte Carlo | 4% |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The most used characterization methods for depositions are DFT and monte carlo simulations.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Reaction mechanisms are usually studied using DFT.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, this is true.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Al2O3 is the most researched with 34%.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":8,"width":454,"height":377},{"panel_id":"b","x":546,"y":3,"width":533,"height":390},{"panel_id":"c","x":0,"y":415,"width":556,"height":373},{"panel_id":"d","x":571,"y":406,"width":509,"height":379}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"pie chart","caption_source":"content.json:img_caption"},"width":1084,"height":789,"image_format":"jpeg","image_sha256":"f176235c4bfe189fb2a1fe861a41e83cd5e1b957f8e717bdb8daa3ebaa922c60","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/polar-chart-rose-chart/train/metadata.jsonl b/subsets/polar-chart-rose-chart/train/metadata.jsonl index bdecea1ed64feacb5409ddcd3f90b3e80dc2e985..9c0d8007ae948d5a121610309b8baaa58b126bda 100644 --- a/subsets/polar-chart-rose-chart/train/metadata.jsonl +++ b/subsets/polar-chart-rose-chart/train/metadata.jsonl @@ -1 +1 @@ -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_16_fig_7.jpg","caption":"Fig. 7. The $\\mathrm{Al_2O_3}$ etch (nm/cycle) rate distribution across the wafer. The ordinate axis is the radius from the center of the wafer. The numbers around are the polar angle.","id":"train/atomic-layer-etching/experimental-usecase/16/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/16/fig_7","subset":"polar-chart-rose-chart","split":"train","classification":[{"panel_id":"a","label":"polar chart (rose chart)"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/Selective atomic layer etching of Al2O3, AlNx and HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"polar chart (rose chart)","caption_source":"content.json:img_caption"},"width":695,"height":497,"image_format":"jpeg","image_sha256":"a299f37ed3e7822cba6888da150fdf032c8e9beab4dad0d4370ccccf64dd3624","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":695,"height":497}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This contour heatmap shows the Al₂O₃ etch rate distribution (nm/cycle) across the wafer in polar coordinates. The etch rate is highest at the wafer center (~0.139 nm/cycle) and decreases gradually toward the edge, reaching ~0.131–0.133 nm/cycle at a radius of ~3 cm. The distribution is largely concentric, with only weak azimuthal modulation visible as small lobes. Overall, the total radial variation is ~0.008 nm/cycle, indicating good etch uniformity.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Radius (cm) | Angle (°) | Etch rate (nm/cycle) |\\n|-------------|-----------|----------------------|\\n| 0.0 | 0 | ~0.139 |\\n| 0.0 | 90 | ~0.139 |\\n| 0.0 | 180 | ~0.139 |\\n| 0.0 | 270 | ~0.139 |\\n| 1.0 | 0 | ~0.137 |\\n| 1.0 | 90 | ~0.136 |\\n| 1.0 | 180 | ~0.136 |\\n| 1.0 | 270 | ~0.137 |\\n| 2.0 | 0 | ~0.135 |\\n| 2.0 | 90 | ~0.134 |\\n| 2.0 | 180 | ~0.134 |\\n| 2.0 | 270 | ~0.135 |\\n| 3.0 | 0 | ~0.132 |\\n| 3.0 | 90 | ~0.132 |\\n| 3.0 | 180 | ~0.132 |\\n| 3.0 | 270 | ~0.132 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The distribution of the wafer rate is evaluated based on the radius of the wafer (with the center taken as the origin) and the polar angle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The center of the wafer\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, the center of the wafer achieves higher etch rates compared to the edges. As the radius increases, the etch rate achieved decreases.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For semiconductor development, it is ideal to achieve the greatest possible homogeneity across the wafer, unlike what is shown in the figure. Otherwise, there could be variations in the performance of the device.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The largest difference in etch rate is 0.008 nm/cycle\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An explanation for non-uniformity in ALE processes is the non-uniform distribution of reactants in the reactor.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There seems to be solely a radial dependence. There is no uni-directional trend visible.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In the center of the reactor, in a circle with a radius of around 1 cm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes, As radius increases from the center, the colors shift from warm to cooler colors, showing the etch rate decreases toward the edge.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Max: 0.139 at center.\\nMin: 0.131 at outer rim.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate is highest near the center and decreases as radius increases. At r ≈ 1 cm , values fall to 0.138-0.139, indicating a steady radial gradient. Small azimuthal variations appear as lobes around [angles], but the overall pattern is mostly concentric. This shows a primary dependence on radial position with minor angle-to-angle variation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Central region (r ≲ 1 cm): satisfies\\n-Mid-radius (≈1–2 cm): partially satisfies\\n-Outer edge (r ≳ 2.5 cm): does not satisfy\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.139 nm/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-) Radius from the wafer center (cm)\\n\\n-) Polar angle around the wafer (degrees)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1 - Plasma density distribution\\n2 - Neutral radical flux and gas flow pattern \\n3 - Ion energy/sheath potential variation\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At the center (0–1 cm): ~0.137–0.139 nm/cycle; highest etch rates. At the mid-radius (1–2.2 cm): ~0.134–0.136 nm/cycle; moderate etch rates finally at the edge (2.2–3.5 cm): ~0.131–0.133 nm/cycle; lowest etch rates\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"minimum ~ 0.131 nm/cycle, maximum ~ 0.139 nm/cycle\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No\\n\\nReason - the center-to-edge variation (~0.131–0.139 nm/cycle) and the six-fold spatial nonuniformity exceed typical nanoscale CD tolerances and would likely require process or hardware correction before manufacturing.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At the center of the wafer\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch rate decreases towards the edge\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Based on the maximum and minimum values in the color scale, difference of 0.004nm is observed and the average value is 0.135nm, therefore the relative error is 3% (difference/average)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Maximum in the center, minimum on the edge of the wafer.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Near the edge.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Starting from about r = 1 cm, the 30°–120° sector is consistently one color interval lower than the others. This indicates a slightly reduced etch rate at the same radius. By r ≈ 2.8 cm, this sector shows no measurable etch, while most other angular regions still exhibit etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The center region of the wafer is most suitable. There, the etch rate is both highest and most uniform, with very small radial and angular variation compared to the mid-radius and especially the edge, where the etch rate drops and even goes to zero in some sectors.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate is highest near the centre of the wafer and decreases toward the edge. The red region marks the maximum values, colour contours indicate lower etch rate going from orange, yellow, green and blue . This centre to edge drop suggests a non-uniform etching environment, with the strongest etching occurring close to the centre of the wafer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"(2 cm, 0°), (3 cm, 180°), (3 cm, 270°)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The local etch rate of Al2O3 in nm per cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Using polar coordinates allows visualization of etch rate variations both radially and angularly across the wafer. By plotting radius from the center and polar angle as axes, it becomes possible to identify regions of higher or lower etching, quantify overall uniformity, and detect any asymmetry due to loading or equipment effects. This approach provides a clear spatial overview that single-point measurements cannot capture.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Central region exposure leading to higher etch rates, Edge effects due to plasma distribution or gas flow, Loading variations across the wafer, Material uniformity and surface preparation\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"±3% from minimum to maximum.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_16_fig_7.jpg","caption":"Fig. 7. The $\\mathrm{Al_2O_3}$ etch (nm/cycle) rate distribution across the wafer. The ordinate axis is the radius from the center of the wafer. The numbers around are the polar angle.","id":"train/atomic-layer-etching/experimental-usecase/16/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/16/fig_7","subset":"polar-chart-rose-chart","split":"train","classification":[{"panel_id":"a","label":"polar chart (rose chart)"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This contour heatmap shows the Al₂O₃ etch rate distribution (nm/cycle) across the wafer in polar coordinates. The etch rate is highest at the wafer center (~0.139 nm/cycle) and decreases gradually toward the edge, reaching ~0.131–0.133 nm/cycle at a radius of ~3 cm. The distribution is largely concentric, with only weak azimuthal modulation visible as small lobes. Overall, the total radial variation is ~0.008 nm/cycle, indicating good etch uniformity.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Radius (cm) | Angle (°) | Etch rate (nm/cycle) |\\n|-------------|-----------|----------------------|\\n| 0.0 | 0 | ~0.139 |\\n| 0.0 | 90 | ~0.139 |\\n| 0.0 | 180 | ~0.139 |\\n| 0.0 | 270 | ~0.139 |\\n| 1.0 | 0 | ~0.137 |\\n| 1.0 | 90 | ~0.136 |\\n| 1.0 | 180 | ~0.136 |\\n| 1.0 | 270 | ~0.137 |\\n| 2.0 | 0 | ~0.135 |\\n| 2.0 | 90 | ~0.134 |\\n| 2.0 | 180 | ~0.134 |\\n| 2.0 | 270 | ~0.135 |\\n| 3.0 | 0 | ~0.132 |\\n| 3.0 | 90 | ~0.132 |\\n| 3.0 | 180 | ~0.132 |\\n| 3.0 | 270 | ~0.132 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The distribution of the wafer rate is evaluated based on the radius of the wafer (with the center taken as the origin) and the polar angle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The center of the wafer\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, the center of the wafer achieves higher etch rates compared to the edges. As the radius increases, the etch rate achieved decreases.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For semiconductor development, it is ideal to achieve the greatest possible homogeneity across the wafer, unlike what is shown in the figure. Otherwise, there could be variations in the performance of the device.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The largest difference in etch rate is 0.008 nm/cycle\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An explanation for non-uniformity in ALE processes is the non-uniform distribution of reactants in the reactor.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There seems to be solely a radial dependence. There is no uni-directional trend visible.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In the center of the reactor, in a circle with a radius of around 1 cm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes, As radius increases from the center, the colors shift from warm to cooler colors, showing the etch rate decreases toward the edge.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Max: 0.139 at center.\\nMin: 0.131 at outer rim.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate is highest near the center and decreases as radius increases. At r ≈ 1 cm , values fall to 0.138-0.139, indicating a steady radial gradient. Small azimuthal variations appear as lobes around [angles], but the overall pattern is mostly concentric. This shows a primary dependence on radial position with minor angle-to-angle variation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Central region (r ≲ 1 cm): satisfies\\n-Mid-radius (≈1–2 cm): partially satisfies\\n-Outer edge (r ≳ 2.5 cm): does not satisfy\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.139 nm/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-) Radius from the wafer center (cm)\\n\\n-) Polar angle around the wafer (degrees)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1 - Plasma density distribution\\n2 - Neutral radical flux and gas flow pattern \\n3 - Ion energy/sheath potential variation\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At the center (0–1 cm): ~0.137–0.139 nm/cycle; highest etch rates. At the mid-radius (1–2.2 cm): ~0.134–0.136 nm/cycle; moderate etch rates finally at the edge (2.2–3.5 cm): ~0.131–0.133 nm/cycle; lowest etch rates\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"minimum ~ 0.131 nm/cycle, maximum ~ 0.139 nm/cycle\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No\\n\\nReason - the center-to-edge variation (~0.131–0.139 nm/cycle) and the six-fold spatial nonuniformity exceed typical nanoscale CD tolerances and would likely require process or hardware correction before manufacturing.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At the center of the wafer\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch rate decreases towards the edge\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Based on the maximum and minimum values in the color scale, difference of 0.004nm is observed and the average value is 0.135nm, therefore the relative error is 3% (difference/average)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Maximum in the center, minimum on the edge of the wafer.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Near the edge.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Starting from about r = 1 cm, the 30°–120° sector is consistently one color interval lower than the others. This indicates a slightly reduced etch rate at the same radius. By r ≈ 2.8 cm, this sector shows no measurable etch, while most other angular regions still exhibit etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The center region of the wafer is most suitable. There, the etch rate is both highest and most uniform, with very small radial and angular variation compared to the mid-radius and especially the edge, where the etch rate drops and even goes to zero in some sectors.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate is highest near the centre of the wafer and decreases toward the edge. The red region marks the maximum values, colour contours indicate lower etch rate going from orange, yellow, green and blue . This centre to edge drop suggests a non-uniform etching environment, with the strongest etching occurring close to the centre of the wafer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"(2 cm, 0°), (3 cm, 180°), (3 cm, 270°)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The local etch rate of Al2O3 in nm per cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Using polar coordinates allows visualization of etch rate variations both radially and angularly across the wafer. By plotting radius from the center and polar angle as axes, it becomes possible to identify regions of higher or lower etching, quantify overall uniformity, and detect any asymmetry due to loading or equipment effects. This approach provides a clear spatial overview that single-point measurements cannot capture.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Central region exposure leading to higher etch rates, Edge effects due to plasma distribution or gas flow, Loading variations across the wafer, Material uniformity and surface preparation\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"±3% from minimum to maximum.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":695,"height":497}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/Selective atomic layer etching of Al2O3, AlNx and HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"polar chart (rose chart)","caption_source":"content.json:img_caption"},"width":695,"height":497,"image_format":"jpeg","image_sha256":"a299f37ed3e7822cba6888da150fdf032c8e9beab4dad0d4370ccccf64dd3624","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/process-flow-diagram/test/metadata.jsonl b/subsets/process-flow-diagram/test/metadata.jsonl index ccc8c877584c4cb87b2c418c0c10f80bdbd79e13..f4a81aae462c10ca92699f0093e167a6ef21efa2 100644 --- a/subsets/process-flow-diagram/test/metadata.jsonl +++ b/subsets/process-flow-diagram/test/metadata.jsonl @@ -1,8 +1,8 @@ -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_78e75c8159892cae9b359d695a0328a844cd2316a6ad19e6aacba07a15b57e5f.jpg","caption":"Fi.18. t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t h t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t","id":"test/atomic-layer-deposition/experimental-usecase/10/78e75c8159892cae9b359d695a0328a844cd2316a6ad19e6aacba07a15b57e5f","sample_id":"atomic-layer-deposition/experimental-usecase/10/78e75c8159892cae9b359d695a0328a844cd2316a6ad19e6aacba07a15b57e5f","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/78e75c8159892cae9b359d695a0328a844cd2316a6ad19e6aacba07a15b57e5f.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/78e75c8159892cae9b359d695a0328a844cd2316a6ad19e6aacba07a15b57e5f.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1416,"height":725,"image_format":"jpeg","image_sha256":"9f6b841b874521fce7fc1acc91c1ca178f22f600aab844de970eed7c4c8012a3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":141,"height":725}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_3.jpg","caption":"Figure 3. Comparison of the $0\\mathrm{K}$ heats of adsorption $(Q_{\\mathrm{ads}}(\\mathrm{TiCl}_4))$ calculated using different model chemistries.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_3","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1028,"height":350,"image_format":"jpeg","image_sha256":"cb5d39aeb0f57ad8b9f30124533bfadba0b87b2fc7ff39a8c712e0eeaa753bd0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1028,"height":350}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 3 compares the 0 K heats of adsorption (Qₐdₛ) of TiCl₄ calculated using different model chemistries, including single-level methods (B3LYP, MP2) and ONIOM hybrid approaches (ONIOM-B3LYP, ONIOM-MP2, ONIOM-CCSD(T)). The figure shows that ONIOM(B3LYP) significantly underestimates the adsorption energy, whereas ONIOM(MP2) closely matches the reference ONIOM(CCSD(T)) results. Similarly, the single-level MP2 method is in better agreement with ONIOM(CCSD(T)) than B3LYP. The comparison highlights both the relative accuracy of computational methods and the rationale for selecting MP2 to calculate heats of adsorption in the study.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Model Chemistry|Q_ads(TiCl4) (kcal/mol)|Notes|\\n|---------------|-----------------------|-----|\\n|ONIOM(B3LYP)|1.9|Underestimates adsorption energy; electronic stabilization energy lower than ZPE increase|\\n|ONIOM(MP2)|7.2|In good agreement with ONIOM(CCSD(T)); reliable for adsorption predictions|\\n|ONIOM(CCSD(T))|7.5|Considered most accurate; used as reference for validation|\\n|Single-level B3LYP|8.9|ΔQ_SM = 7.0 kcal/mol relative to MP2; shows trend consistency with ONIOM|\\n|Single-level MP2|1.9|Consistent with ONIOM(MP2); selected for heats of adsorption calculations|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ONIOM-MP2 and single-level MP2 closely match ONIOM(CCSD(T)) results for Qₐdₛ(TiCl₄).\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The comparison shows that some methods, like ONIOM(B3LYP), significantly underestimate adsorption energies, while MP2-based approaches (ONIOM-MP2 or single-level MP2) provide results much closer to the high-accuracy ONIOM(CCSD(T)) reference. This informs the selection of MP2 for calculating heats of adsorption in the study, balancing computational efficiency with reliability. By validating trends across multiple methods, the study ensures that the chosen computational approach accurately predicts adsorption energetics, which is crucial for modeling TiCl₄ reactions on the SiO₂ surface.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"ONIOM(B3LYP) underestimates Qₐdₛ(TiCl₄) significantly, ONIOM(MP2) closely aligns with ONIOM(CCSD(T)) results, Single-level MP2 shows better agreement with CCSD(T) than single-level B3LYP, Differences in adsorption energies illustrate the impact of model chemistry choice on computational accuracy\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_4.jpg","caption":"Fig. 4. Schematic representation of the pathways (gas phase and surface) for GaN deposition.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_4","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":880,"height":778,"image_format":"jpeg","image_sha256":"1cdd83fb9bbc3ba73405051f609d5ce286b829d4ea8cda76dcd609d8da8dab9a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":2,"width":863,"height":774}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_12_figure_1.jpg","caption":"Figure 1. (a) Schematic representation of an ideal ALE cycle. (b) Schematic representation of a proposed $\\mathrm{Al}_2\\mathrm{O}_3$ ALE cycle.","id":"test/atomic-layer-etching/simulation-usecase/12/figure_1","sample_id":"atomic-layer-etching/simulation-usecase/12/figure_1","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"process flow diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":564,"height":789,"image_format":"jpeg","image_sha256":"ffba27f47bba22364863bdd3409beb6ed265898af8ad33da23028c6b20abdc3b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":561,"height":379},{"panel_id":"b","x":18,"y":420,"width":539,"height":368}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic of an idealized four-step atomic layer etching cycle illustrating surface modification, purge, selective removal, and purge. The diagram emphasizes cyclic, self-limiting reactions that enable layer-by-layer material removal.\"},{\"panel_id\":\"b\",\"text\":\"Proposed thermal ALE cycle for Al₂O₃ in which HF exposure converts the surface to an AlF₃ layer, followed by Sn(acac)₂ exposure that removes the fluorinated layer through ligand-exchange chemistry. Volatile metal–organic byproducts form, restoring the Al₂O₃ surface and completing a plasma-free ALE cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Purges prevent gas-phase reactions and ensure each half-reaction proceeds in a self-limiting manner.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Each step is surface-saturating and self-limiting.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Previous methods used HF + H₂O for both fluorination and ligand-promoted removal; this work uniquely splits the roles: HF for fluorination only, and Sn(acac)₃ as a dedicated, non-corrosive, organometallic removal agent.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_1.jpg","caption":"Figure 1. Schematic model of the thermal ALE process.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_1","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_1","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1011,"height":302,"image_format":"jpeg","image_sha256":"45c8c96f7efc6502fc5a14c8937d7d96b37c133dc9a18c50dab5ec2ddf1c31f0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":13,"width":995,"height":284}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"One thermal ALE cycle is shown as a two-precursor sequence separated by purge steps. After dosing the 1st precursor, purging leaves a surface “modified layer.” The 2nd precursor is then introduced and, after the final purge, the schematic indicates formation of an “etched region,” implying net material removal. The arrow returning to the start suggests the cycle repeats.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first purge leaves a “modified layer” on the substrate surface.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The final panel marks an “etched region,” implying a net change to the substrate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The cycle starts by adding the 1st precursor to the substrate, followed by a purge that leaves a modified surface layer. Next, the 2nd precursor is introduced to react with that modified layer. A final purge removes reaction products and corresponds to the appearance of an etched region in the schematic. The loop arrow indicates the sequence repeats as a cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1. Add 1st precursor\\n2. Purge\\n3. Add 2nd precursor\\n4. Purge\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_beda8ab9ce95434954a012013d7485948ee341f590c89ef8b815d35b72f89254.jpg","caption":"(a)","id":"test/atomic-layer-etching/simulation-usecase/34/beda8ab9ce95434954a012013d7485948ee341f590c89ef8b815d35b72f89254","sample_id":"atomic-layer-etching/simulation-usecase/34/beda8ab9ce95434954a012013d7485948ee341f590c89ef8b815d35b72f89254","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/beda8ab9ce95434954a012013d7485948ee341f590c89ef8b815d35b72f89254.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/beda8ab9ce95434954a012013d7485948ee341f590c89ef8b815d35b72f89254.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":677,"height":292,"image_format":"jpeg","image_sha256":"be9e57f09aa2e961858d9a44b1e7db45999e3d5058fe7e2f5fd29b1bc2e647a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":677,"height":292}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_4.jpg","caption":"Fig. 4. A 2D lateral view of the dynamic mesh for the spatial reactor design with $0.25\\mathrm{mm}$ gap distance.","id":"test/atomic-layer-etching/simulation-usecase/34/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_4","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":1214,"height":303,"image_format":"jpeg","image_sha256":"a6bc1de10f0562b76b81bff5b3ed7ab2a694a9305610d547bd32fd97721982e2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1214,"height":303}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_6.jpg","caption":"(b) Fig. 6. Schematic R2R control diagrams of an (a) EWMA-based controller and an (b) ANN-based controller. The \"process\" is the multiscale CFD model, $\\mathbf{x}$ denotes the input vector, $y$ represents the output variable, $\\tau$ is the setpoint or target value, $c$ is the bias for the previous batch run, $n - 1$ , and the current batch run, $n$ , and $\\Delta y$ is the deviation of the output computed from the multiscale CFD simulation from the setpoint, $\\tau$ .","id":"test/atomic-layer-etching/simulation-usecase/34/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_6","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":675,"height":275,"image_format":"jpeg","image_sha256":"e700c757c5a48e999e7fb4c3a8354238046306f74c0c3f7c0eae9fb5e2352186","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":275}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_78e75c8159892cae9b359d695a0328a844cd2316a6ad19e6aacba07a15b57e5f.jpg","caption":"Fi.18. t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t h t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t","id":"test/atomic-layer-deposition/experimental-usecase/10/78e75c8159892cae9b359d695a0328a844cd2316a6ad19e6aacba07a15b57e5f","sample_id":"atomic-layer-deposition/experimental-usecase/10/78e75c8159892cae9b359d695a0328a844cd2316a6ad19e6aacba07a15b57e5f","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":141,"height":725}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/78e75c8159892cae9b359d695a0328a844cd2316a6ad19e6aacba07a15b57e5f.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/78e75c8159892cae9b359d695a0328a844cd2316a6ad19e6aacba07a15b57e5f.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1416,"height":725,"image_format":"jpeg","image_sha256":"9f6b841b874521fce7fc1acc91c1ca178f22f600aab844de970eed7c4c8012a3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_3.jpg","caption":"Figure 3. Comparison of the $0\\mathrm{K}$ heats of adsorption $(Q_{\\mathrm{ads}}(\\mathrm{TiCl}_4))$ calculated using different model chemistries.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_3","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 3 compares the 0 K heats of adsorption (Qₐdₛ) of TiCl₄ calculated using different model chemistries, including single-level methods (B3LYP, MP2) and ONIOM hybrid approaches (ONIOM-B3LYP, ONIOM-MP2, ONIOM-CCSD(T)). The figure shows that ONIOM(B3LYP) significantly underestimates the adsorption energy, whereas ONIOM(MP2) closely matches the reference ONIOM(CCSD(T)) results. Similarly, the single-level MP2 method is in better agreement with ONIOM(CCSD(T)) than B3LYP. The comparison highlights both the relative accuracy of computational methods and the rationale for selecting MP2 to calculate heats of adsorption in the study.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Model Chemistry|Q_ads(TiCl4) (kcal/mol)|Notes|\\n|---------------|-----------------------|-----|\\n|ONIOM(B3LYP)|1.9|Underestimates adsorption energy; electronic stabilization energy lower than ZPE increase|\\n|ONIOM(MP2)|7.2|In good agreement with ONIOM(CCSD(T)); reliable for adsorption predictions|\\n|ONIOM(CCSD(T))|7.5|Considered most accurate; used as reference for validation|\\n|Single-level B3LYP|8.9|ΔQ_SM = 7.0 kcal/mol relative to MP2; shows trend consistency with ONIOM|\\n|Single-level MP2|1.9|Consistent with ONIOM(MP2); selected for heats of adsorption calculations|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ONIOM-MP2 and single-level MP2 closely match ONIOM(CCSD(T)) results for Qₐdₛ(TiCl₄).\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The comparison shows that some methods, like ONIOM(B3LYP), significantly underestimate adsorption energies, while MP2-based approaches (ONIOM-MP2 or single-level MP2) provide results much closer to the high-accuracy ONIOM(CCSD(T)) reference. This informs the selection of MP2 for calculating heats of adsorption in the study, balancing computational efficiency with reliability. By validating trends across multiple methods, the study ensures that the chosen computational approach accurately predicts adsorption energetics, which is crucial for modeling TiCl₄ reactions on the SiO₂ surface.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"ONIOM(B3LYP) underestimates Qₐdₛ(TiCl₄) significantly, ONIOM(MP2) closely aligns with ONIOM(CCSD(T)) results, Single-level MP2 shows better agreement with CCSD(T) than single-level B3LYP, Differences in adsorption energies illustrate the impact of model chemistry choice on computational accuracy\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1028,"height":350}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1028,"height":350,"image_format":"jpeg","image_sha256":"cb5d39aeb0f57ad8b9f30124533bfadba0b87b2fc7ff39a8c712e0eeaa753bd0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_4.jpg","caption":"Fig. 4. Schematic representation of the pathways (gas phase and surface) for GaN deposition.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_4","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":2,"width":863,"height":774}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":880,"height":778,"image_format":"jpeg","image_sha256":"1cdd83fb9bbc3ba73405051f609d5ce286b829d4ea8cda76dcd609d8da8dab9a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_12_figure_1.jpg","caption":"Figure 1. (a) Schematic representation of an ideal ALE cycle. (b) Schematic representation of a proposed $\\mathrm{Al}_2\\mathrm{O}_3$ ALE cycle.","id":"test/atomic-layer-etching/simulation-usecase/12/figure_1","sample_id":"atomic-layer-etching/simulation-usecase/12/figure_1","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"process flow diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic of an idealized four-step atomic layer etching cycle illustrating surface modification, purge, selective removal, and purge. The diagram emphasizes cyclic, self-limiting reactions that enable layer-by-layer material removal.\"},{\"panel_id\":\"b\",\"text\":\"Proposed thermal ALE cycle for Al₂O₃ in which HF exposure converts the surface to an AlF₃ layer, followed by Sn(acac)₂ exposure that removes the fluorinated layer through ligand-exchange chemistry. Volatile metal–organic byproducts form, restoring the Al₂O₃ surface and completing a plasma-free ALE cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Purges prevent gas-phase reactions and ensure each half-reaction proceeds in a self-limiting manner.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Each step is surface-saturating and self-limiting.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Previous methods used HF + H₂O for both fluorination and ligand-promoted removal; this work uniquely splits the roles: HF for fluorination only, and Sn(acac)₃ as a dedicated, non-corrosive, organometallic removal agent.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":561,"height":379},{"panel_id":"b","x":18,"y":420,"width":539,"height":368}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":564,"height":789,"image_format":"jpeg","image_sha256":"ffba27f47bba22364863bdd3409beb6ed265898af8ad33da23028c6b20abdc3b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_1.jpg","caption":"Figure 1. Schematic model of the thermal ALE process.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_1","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_1","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"One thermal ALE cycle is shown as a two-precursor sequence separated by purge steps. After dosing the 1st precursor, purging leaves a surface “modified layer.” The 2nd precursor is then introduced and, after the final purge, the schematic indicates formation of an “etched region,” implying net material removal. The arrow returning to the start suggests the cycle repeats.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first purge leaves a “modified layer” on the substrate surface.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The final panel marks an “etched region,” implying a net change to the substrate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The cycle starts by adding the 1st precursor to the substrate, followed by a purge that leaves a modified surface layer. Next, the 2nd precursor is introduced to react with that modified layer. A final purge removes reaction products and corresponds to the appearance of an etched region in the schematic. The loop arrow indicates the sequence repeats as a cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1. Add 1st precursor\\n2. Purge\\n3. Add 2nd precursor\\n4. Purge\"}]}]","bbox":[{"panel_id":"a","x":10,"y":13,"width":995,"height":284}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1011,"height":302,"image_format":"jpeg","image_sha256":"45c8c96f7efc6502fc5a14c8937d7d96b37c133dc9a18c50dab5ec2ddf1c31f0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_beda8ab9ce95434954a012013d7485948ee341f590c89ef8b815d35b72f89254.jpg","caption":"(a)","id":"test/atomic-layer-etching/simulation-usecase/34/beda8ab9ce95434954a012013d7485948ee341f590c89ef8b815d35b72f89254","sample_id":"atomic-layer-etching/simulation-usecase/34/beda8ab9ce95434954a012013d7485948ee341f590c89ef8b815d35b72f89254","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":677,"height":292}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/beda8ab9ce95434954a012013d7485948ee341f590c89ef8b815d35b72f89254.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/beda8ab9ce95434954a012013d7485948ee341f590c89ef8b815d35b72f89254.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":677,"height":292,"image_format":"jpeg","image_sha256":"be9e57f09aa2e961858d9a44b1e7db45999e3d5058fe7e2f5fd29b1bc2e647a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_4.jpg","caption":"Fig. 4. A 2D lateral view of the dynamic mesh for the spatial reactor design with $0.25\\mathrm{mm}$ gap distance.","id":"test/atomic-layer-etching/simulation-usecase/34/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_4","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1214,"height":303}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":1214,"height":303,"image_format":"jpeg","image_sha256":"a6bc1de10f0562b76b81bff5b3ed7ab2a694a9305610d547bd32fd97721982e2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_6.jpg","caption":"(b) Fig. 6. Schematic R2R control diagrams of an (a) EWMA-based controller and an (b) ANN-based controller. The \"process\" is the multiscale CFD model, $\\mathbf{x}$ denotes the input vector, $y$ represents the output variable, $\\tau$ is the setpoint or target value, $c$ is the bias for the previous batch run, $n - 1$ , and the current batch run, $n$ , and $\\Delta y$ is the deviation of the output computed from the multiscale CFD simulation from the setpoint, $\\tau$ .","id":"test/atomic-layer-etching/simulation-usecase/34/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_6","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":275}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":675,"height":275,"image_format":"jpeg","image_sha256":"e700c757c5a48e999e7fb4c3a8354238046306f74c0c3f7c0eae9fb5e2352186","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/process-flow-diagram/train/metadata.jsonl b/subsets/process-flow-diagram/train/metadata.jsonl index 30805194d0f3c80c402f8cf372f358416e7b9a32..12167b65e72140b4f8220b4e2cdd59c858ba160e 100644 --- a/subsets/process-flow-diagram/train/metadata.jsonl +++ b/subsets/process-flow-diagram/train/metadata.jsonl @@ -1,33 +1,33 @@ -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_49_figure_4.jpg","caption":"Figure 4. a) Schematic illustration of the fabrication process for the $\\mathrm{MoS_2 / TiNTs}$ heterostructure. SEM images of TiNTs (top-view b) before and c) after 200 ALD- $\\mathrm{MoS_2}$ coating. d) Raman spectrum of the TiNTs before and after ALD- $\\mathrm{MoS_2}$ deposition. e,f) TEM and high-resolution TEM images, g) SAED, and h) HAADF-STEM and EDX element mapping of $\\mathrm{MoS_2 / TiNTs}$ heterostructure.","id":"train/atomic-layer-deposition/experimental-usecase/49/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/49/figure_4","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"spectra chart"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"},{"panel_id":"g","label":"image panel"},{"panel_id":"h","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/Shen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":1003,"height":964,"image_format":"jpeg","image_sha256":"1f0dc925c677b93a5b79aea3583d71eca05a8f2efc93b127cb48fdeb5d66c421","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":8,"width":996,"height":221},{"panel_id":"b","x":3,"y":246,"width":328,"height":224},{"panel_id":"c","x":336,"y":244,"width":335,"height":224},{"panel_id":"d","x":675,"y":234,"width":323,"height":231},{"panel_id":"e","x":3,"y":471,"width":333,"height":326},{"panel_id":"f","x":331,"y":473,"width":338,"height":326},{"panel_id":"g","x":672,"y":471,"width":326,"height":324},{"panel_id":"h","x":6,"y":801,"width":993,"height":155}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic illustration of the fabrication process of the MoS₂/TiNTs heterostructure, including Ti foil anodization to form Ti nanotubes and subsequent ALD growth of MoS₂.\"},{\"panel_id\":\"b\",\"text\":\"Top-view SEM image of pristine TiNTs, showing a uniform and well-aligned nanotubular morphology.\"},{\"panel_id\":\"c\",\"text\":\"Top-view SEM image of TiNTs after 200 ALD MoS₂ cycles, demonstrating conformal coating of MoS₂ on the nanotube walls.\"},{\"panel_id\":\"d\",\"text\":\"Raman spectra of TiNTs before and after ALD MoS₂ deposition, revealing the characteristic vibrational modes of MoS₂. The Raman spectra confirm successful MoS₂ coating on TiNTs, as evidenced by the appearance of characteristic MoS₂ vibrational modes, while the persistence of TiO₂ peaks indicates laser penetration through the coating to the substrate.\"},{\"panel_id\":\"e\",\"text\":\"Cross-sectional TEM image of the MoS₂/TiNTs heterostructure, highlighting the core–shell structure.\"},{\"panel_id\":\"f\",\"text\":\"High-resolution TEM image showing a continuous and uniform MoS₂ layer on the TiNT surface.\"},{\"panel_id\":\"g\",\"text\":\"Selected-area electron diffraction (SAED) pattern confirming the crystalline nature of the deposited MoS₂.\"},{\"panel_id\":\"h\",\"text\":\"HAADF-STEM image with corresponding EDX elemental maps, confirming the homogeneous distribution of Mo and S over the TiNTs and successful formation of the MoS₂/TiNTs heterostructure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"| Mode label | Raman shift (cm⁻¹) | Relative intensity | Note |\\n|----------|--------------------|--------------------|-------|\\n| E_g | ~145 | High | Main TiO₂ anatase peak |\\n| B₁g | ~395 | Medium | TiO₂ lattice vibration |\\n| A₁g | ~515 | Medium | TiO₂ mode |\\n| E_g | ~640 | Medium–low | Higher-order TiO₂ peak |\\n| LA | ~230 | Medium | Longitudinal acoustic mode MoS₂ |\\n| E₂g¹ | ~380–390 | High | In-plane MoS₂ vibration |\\n| A₁g | ~405–410 | Very high | Out-of-plane MoS₂ vibration |\\n| 2LA(M) | ~450–460 | Medium | Second-order MoS₂ mode |\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"},{\"panel_id\":\"h\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The appearance of two new, distinct peaks in the MoS₂/TiNTs spectrum—the E2g1 and A1gmodes characteristic of crystalline 2H-MoS₂—serves as the primary evidence for successful ALD deposition.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The intensity of the primary TiNT peak (the Eg mode) is significantly attenuated in the MoS₂/TiNTs spectrum. This indicates that the conformal ALD-MoS₂ coating covers the nanotube surfaces, damping their Raman signal.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The frequency difference of ~25 cm⁻¹ is characteristic of few-layer or bulk MoS₂. This confirms the deposited film is crystalline 2H-MoS₂ and suggests it consists of more than a single monolayer.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sharp, well-defined MoS₂ peaks imply the ALD process produced a coating with good crystalline order and minimal defects. This high material quality is essential for achieving optimal electrical conductivity and catalytic activity in functional applications.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_52_figure_2.jpg","caption":"Figure 2. Schematic representation of an ALD super-cycle consisting of the two individual ALD processes for $\\mathrm{Co_3O_4}$ and $\\mathrm{Li_2CO_3}$ . A cycles of the $\\mathrm{Co_3O_4}$ process are combined with B cycles of the $\\mathrm{Li_2CO_3}$ process. The film-substrate stack is also shown.","id":"train/atomic-layer-deposition/experimental-usecase/52/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/52/figure_2","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/Donders et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":673,"height":670,"image_format":"jpeg","image_sha256":"b5c4765d13fa86e763f1dbf97ddee061db4d7b15243a8932507f71cb7b4891dd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":4,"width":661,"height":428},{"panel_id":"b","x":5,"y":432,"width":663,"height":228}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A schematic of an ALD super cycle that alternates A cycles of a Co3O4 process using CoCp2 and O2 plasma with B cycles of a Li2CO3 process using LiOtBu and O2 plasma. The arrows indicate that these two sub processes are combined sequentially to build the final film.\"},{\"panel_id\":\"b\",\"text\":\"A layer stack schematic of the sample showing a LiCoO2 electrode on a platinum current collector with a TiO2 adhesion layer on a silicon substrate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Layer | Description |\\n|---|---|\\n| LiCoO₂ electrode | Lithium cobalt oxide electrode layer |\\n| Platinum current collector | Conductive layer made of platinum |\\n| TiO₂ adhesion layer | Adhesive layer of titanium dioxide |\\n| Silicon substrate | Base material of silicon |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The super cycle is a repeated sequence that combines two separate ALD processes. Here, A cycles deposit the Co3O4 component and B cycles deposit the Li2CO3 component. Repeating the combined sequence is the method used to build up the overall lithium cobalt oxide film compositionally from these two constituent processes.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing A cycles increases the relative contribution of the Co3O4 sub process within each super cycle. With B cycles fixed, the fraction of deposition steps associated with the Li2CO3 sub process becomes smaller in comparison. Qualitatively, the deposited material per super cycle would be expected to become more dominated by the Co containing component of the sequence.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The metal precursors are CoCp2 for the Co3O4 loop and LiOtBu for the Li2CO3 loop, and both use O2 plasma as the oxidant step.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"LiCoO2 electrode\\n\\nPlatinum current collector\\n\\nTiO2 adhesion layer\\n\\nSilicon substrate\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_1.jpg","caption":"Figure 1: Demonstration of zinc oxide ALD using $(\\mathrm{C}_2\\mathrm{H}_5)_2\\mathrm{Zn}$ and $\\mathrm{H}_2\\mathrm{O}$ precursors [2].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_1","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1314,"height":692,"image_format":"jpeg","image_sha256":"efdfdc375a187b5aa04c5e618bd4232ef8b32ea1b3356161aa8866b840b1de97","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":2,"width":1301,"height":679}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_19.jpg","caption":"Figure 19: Schematic of the fabrication process of the thin film alloy of Rh/Ir [191].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_19","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_19","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_19.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_19.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1008,"height":505,"image_format":"jpeg","image_sha256":"e4de4c6155db6b451746446ad19266eacbdc924cbb64ea7d4214c8d480584bf4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":4,"width":999,"height":495}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_3.jpg","caption":"Figure 3: llustration of (a) a cycle of thermal/plasma-enhanced atomic layer deposition, (b) the manufacturing process of hollow inorganic materials or polymer-inorganic composite from a polymer substrate with asymmetrical 3D nanonetworks, and (c) the manufacturing process of hollow inorganic materials or polymer-inorganic composite from a polymer substrate with regular 3D nanonetworks [66]","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_3","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"process flow diagram"},{"panel_id":"c","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1308,"height":1395,"image_format":"jpeg","image_sha256":"e79a91d37baf34efbed22ec393eabd2888c98216a110095cb44efe3a3a42e823","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":7,"y":1005,"width":1298,"height":353},{"panel_id":"b","x":5,"y":656,"width":1306,"height":301},{"panel_id":"a","x":0,"y":37,"width":1295,"height":598}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_19_figure_1.jpg","caption":"Figure 1. Deposition method of PEALD-IGZO films and device fabrication process Schematic of(a) IGZO deposited with supercyle (b) $\\mathrm { O } _ { 2 }$ and $\\mathrm { N } _ { 2 } \\mathrm { O }$ image.","id":"train/atomic-layer-deposition/simulation-usecase/19/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/19/figure_1","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"process flow diagram"},{"panel_id":"c","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/Dong-Gyu Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1114,"height":728,"image_format":"jpeg","image_sha256":"fa16e12a99c9a4155578432bb35c6d374229f5b49c6b23a0142c2d56fea8d0c4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":11,"y":384,"width":1093,"height":340},{"panel_id":"b","x":508,"y":4,"width":600,"height":370},{"panel_id":"a","x":4,"y":8,"width":480,"height":355}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_25_figure_2.jpg","caption":"Figure 2. Surface saturation flowchart. $-\\mathrm{OH}$ neighbors are hydroxyls within the bridging distance of $3.5\\mathrm{\\AA}$ .","id":"train/atomic-layer-deposition/simulation-usecase/25/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/25/figure_2","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/Kristopher S. Brown et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":847,"height":600,"image_format":"jpeg","image_sha256":"eb9a451910537ebd436e8339598bf1a127ce4967e09c6dc7d8a82100cb34eb25","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":5,"width":839,"height":592}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_10.jpg","caption":"Figure 10. Schematic diagram of $\\mathsf{H}_2\\mathsf{O}$ molecule decomposition in two dimensions. The activation energies for proton transfer are specified by the different c.n. of the two oxygen neighbors. The thicker arrow indicates stronger attraction by one coordinated oxygen to abstract a proton from $\\mathsf{H}_2\\mathsf{O}$ . (Same scheme as Fig. 1). [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_10","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":614,"height":386,"image_format":"jpeg","image_sha256":"47d7e8dfe785003c489c3ed9d5c96a43167e90e1af207f7bfb59ae9a3dc065f9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":5,"width":610,"height":380}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_2.jpg","caption":"Figure 2. Schematic diagram of densification of $\\mathsf{HfX}_2$ into empty cation sites. The presence of more under-coordinated oxygen around the left-hand cation site applies speculatively a stronger attractive force on the $\\mathsf{HfX}_2$ adsorbate than that at the right-hand site. The thicker black arrow indicates the stronger attraction where reverse densification is impossible. Red arrows show migration process. (Same scheme as Fig. 1). [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_2","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":608,"height":400,"image_format":"jpeg","image_sha256":"d9e679fc58a9625dc27f9a49a43e68781262dc2722b29b7e3c49204fd43496a1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":604,"height":397}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_3.jpg","caption":"Figure 3. Schematic diagram of densification and migration of $\\mathsf{HfO}_2$ (Same scheme as Fig. 1). Black arrows show potential densification where reverse densification is impossible. Red arrows show migration process. The migration process occurs until a c.n. greater than 2 is obtained by hafnium of the precursor. [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_3","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":658,"height":275,"image_format":"jpeg","image_sha256":"19e1f06b73c963defbca6394cc0367d55f7c28665bfbbfbc009db47df1d44c53","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":653,"height":271}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_5.jpg","caption":"Figure 5. Schematic 2D diagram of blocking after adsorption of the undersified hafnium precursor. The filled boxes show blocked sites with respect to further adsorption of $\\mathsf{HfX}_4$ due to the presence of $\\mathsf{HfX}_4$ adsorbate at the surface site on the left (Same scheme as Fig. 1). [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_5","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":614,"height":381,"image_format":"jpeg","image_sha256":"0c1062a18a365dbda76b5c90750523d0a875c6f876cdeda9619092c519526a13","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":610,"height":376}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_6.jpg","caption":"Figure 6. Schematic diagram of blocking after densification of the hafnium precursor onto a cation site. The presence of $\\mathsf{HfX}_2$ at the cation site precludes adsorption (filled boxes) at fewer sites than in $\\mathsf{HfX}_4$ at an anion site (Fig. 5). [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_6","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":644,"height":469,"image_format":"jpeg","image_sha256":"a3cf0d68cfa98c918e3a14d3f5fd00c112d9f02a1ad315cf708049c7ac0d0f9e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":638,"height":463}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_9.jpg","caption":"Figure 9. Schematic diagram of $\\mathsf{H}_2\\mathsf{O}$ molecule adsorption in two dimensions. $\\mathsf{H}_2\\mathsf{O}$ adsorption occurs in the cation site, due to the presence of another $\\mathsf{HfX^{(2)}}$ at the neighboring cation site (cooperative event). Densification of $\\mathsf{H}_2\\mathsf{O}$ molecule (red arrow) occurs randomly into an empty anion site $\\square^{(1)}$ . [Same scheme as Fig. 1]. [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_9","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":611,"height":361,"image_format":"jpeg","image_sha256":"6a84adbaa18f456f535dcc7be202d017383d65c5563a109bc4106d9af559a030","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":609,"height":359}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_27_figure_1.jpg","caption":"Figure 1. Schematic representation of a surface using plasma-enhanced atomic layer deposition (PEALD).","id":"train/atomic-layer-deposition/simulation-usecase/27/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/27/figure_1","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/Martin Becker et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":692,"height":586,"image_format":"jpeg","image_sha256":"e0743fb3e58bec8facf77b9237cfd116455f5abd1483725cd28d9b0c0e871e79","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":692,"height":586}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"presents a schematic of the plasma-enhanced atomic layer deposition (PEALD) cycle, showing sequential steps including precursor exposure, surface-limited chemisorption, inert gas purging, plasma-activated oxidation, and repetition of the cycle to build a thin film. It highlights how the PEALD process achieves controlled, self-limiting growth on the substrate surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Each stage of the PEALD cycle—precursor exposure, surface saturation, purging, and plasma oxidation—ensures accurate, self-limiting development at the atomic level, making it crucial. This makes it possible for films to be extremely homogeneous and conformal across both simple and intricate 3D elements. For sensitive substrates and next-generation device topologies, the use of plasma increases reactivity, enabling the deposition of thick, superior coatings at lower temperatures.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The plasma oxidation step.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Surface –OH groups, Surface chemisorbed precursor ligands, Oxygen radicals from plasma\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_27_figure_2.jpg","caption":"Figure 2. Monte Carlo (MC) simulation protocol for growth of PEALD thin films.","id":"train/atomic-layer-deposition/simulation-usecase/27/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/27/figure_2","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/Martin Becker et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":447,"height":622,"image_format":"jpeg","image_sha256":"3607d88fa7180620cff110db441cc4a4b9c2590205b94395fd71cec2c47075d5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":447,"height":622}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure presents the workflow of the Monte Carlo simulation used to relax the hydroxylated surface in the PEALD model. It outlines key computational steps including initializing surface species, performing Monte Carlo moves, evaluating energy changes, accepting or rejecting moves, and iterating until the system reaches equilibrium. This diagram summarizes the simulation protocol that governs surface configuration updates.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Monte Carlo workflow is essential because it allows systematic exploration of surface configurations, energy changes, and relaxation dynamics before simulating individual PEALD reaction steps. By iteratively updating the surface through accepted and rejected moves, the method helps generate a realistic equilibrium surface structure with properly arranged –OH groups. This accurate initial surface state is critical for predicting adsorption behavior, reaction energetics, and overall process simulation fidelity in PEALD modeling.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The energy evaluation and acceptance criterion step.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Distribution of surface –OH groups, Local bonding configuration, Energetic stability of neighboring sites, Surface relaxation pathways\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig_1.jpg","caption":"FIG. 1. (Color online) Illustration of the ALD growth process.","id":"train/atomic-layer-deposition/simulation-usecase/31/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig_1","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":672,"height":289,"image_format":"jpeg","image_sha256":"a445de7662b2d19314d6146481c23c3f6e7842803d0effb52937854252690851","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":4,"width":667,"height":281}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_3.jpg","caption":"Figure 3. Coding architecture of the multiscale simulation using various programming languages to conjoin the mesoscopic and macroscopic simulations. In a Linux Shell script as an interface between the macroscopic and mesoscopic models, two models are simulated while exchanging pressure, temperature, and source generation (or consumption) with each other.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_3","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":761,"height":652,"image_format":"jpeg","image_sha256":"7d4264df28453b457e701fa0f087bdf1a657deadaf8f6bc9c925f105d37dee05","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":761,"height":652}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 3 presents a process flow diagram of the multiscale simulation architecture, showing how the mesoscopic model (ab initio methods and kinetic Monte Carlo) and the macroscopic CFD model are conjoined via a Linux Shell script interface. The diagram highlights the iterative exchange of pressure, temperature, and source generation/consumption between the models, enabling simultaneous simulation of surface kinetics and macroscopic fluid dynamics.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Category / Component | Description |\\n|---------------------------------|-----------------------------------------------------------------------------|\\n| Overall Description | Diagram showing integration of mesoscopic (kMC) and macroscopic (CFD) simulations via a Linux Shell script, enabling iterative exchange of pressure, temperature, and source terms for multiscale modeling. |\\n| Input: Macroscopic CFD Model | ANSYS Fluent (continuum fluid dynamics, reactor optimization, boundary conditions) |\\n| Input: Mesoscopic kMC Model | Python Script (surface kinetics via kinetic Monte Carlo, based on ab initio QM + statistical mechanics) |\\n| Input: Process Time & Source Terms | Simulation time span and source term definitions for coupling with CFD model |\\n| Data Exchange: UDF | Transfers process time & source terms from mesoscopic → macroscopic model |\\n| Data Exchange: UDM | Feedback loop from mesoscopic model to CFD (surface kinetics → fluid dynamics) |\\n| Output: Coupled Simulation | Combined results showing surface kinetics and macroscopic fluid behavior |\\n| Output: Species Distribution | Time-evolving concentrations and reaction rates across the reactor domain |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Pressure, Temperature, Source generation rates, Source consumption rates\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Integrating the two simulations allows for feedback between surface kinetics and fluid dynamics, providing a more comprehensive and accurate representation of the process than running either model independently.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The architecture uses a Linux Shell script as an interface between the mesoscopic and macroscopic models. It allows the two simulations to exchange key data such as pressure, temperature, and source generation or consumption iteratively. This data exchange enables simultaneous modeling of surface kinetics and macroscopic fluid dynamics, ensuring the multiscale simulation reflects both atomic-level and continuum-level phenomena accurately.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mesoscopic simulation uses Python scripts for kinetic Monte Carlo modeling, and the macroscopic simulation uses ANSYS Fluent for CFD. A Linux Shell script connects the two.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_1.jpg","caption":"Figure 1. The deposition method used to model the $\\mathrm{Al}_2\\mathrm{O}_3$ film growth.","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_1","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":619,"height":742,"image_format":"jpeg","image_sha256":"6c61daca6e281a1a2524fbadfc3c1a6789ceca9db7d1dbaaa1bfe37c8865a8c3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":617,"height":737}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows the algorithm used to model Al₂O₃ growth. It tests steric hindrance and overlap before accepting deposition. The loop continues until a full monolayer is formed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The algorithm scans the surface for OH groups.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As coverage increases, steric hindrance and overlap become more frequent. This leads to more rejections and fewer accepted deposition events.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Local geometric availability around the OH group.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Enforcing monolayer completion ensures that the MD simulation is started from a well-defined configuration corresponding to a completed deposition stage, rather than from a partially filled surface.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_2.jpg","caption":"Figure 2. The preparation process of the hydroxylated $\\mathrm{Al}_2\\mathrm{O}_3$ surface.","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_2","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":628,"height":178,"image_format":"jpeg","image_sha256":"ff4f5a1c0192ac3adaf98329a520f25ebf6ccbd6e347d58aa353f4ee8f4bffea","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":624,"height":176}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the steps used to prepare a hydroxylated Al₂O₃ surface. The process starts from a high-temperature annealed structure. The surface is then cooled, modified, and relaxed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The initial annealing at 5000 K is used to fully randomize the atomic structure of the Al₂O₃ system. At such high temperature, atoms can move freely and lose memory of any initial ordering. This step ensures that the resulting surface is truly amorphous and not biased by the starting configuration.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Lateral size of the simulation cell\\n-Periodic boundary conditions\\n-Surface area available for hydroxylation\\n-Slab thickness relative to frozen layers\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Hydroxyl groups act as the primary reactive sites for ALD precursor adsorption. Their distribution controls where and how surface reactions occur. Including –OH groups therefore makes the simulated surface chemically realistic for ALD studies.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first annealing occurs at 5000 K to randomize the structure, whereas the second annealing is performed at 1000 K to relax the hydroxylated surface without destroying its topology.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_6_figure_8.jpg","caption":"Figure 8. Illustration of the number of publications summarized in Table 2 categorized (a) per year between 2002 and 2021 and (b) per publication country. The search was performed with Web of Science using the following keywords: Atomic Layer Deposition and Theoretical. Irrelevant works were omitted and works combining experiments and theory are not covered in detail.","id":"train/atomic-layer-deposition/simulation-usecase/6/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/6/figure_8","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":625,"height":736,"image_format":"jpeg","image_sha256":"8f4678119b064cbeb8b381127f82f98fe2de421ca9c63c661a5c455562017047","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":1,"y":149,"width":621,"height":582},{"panel_id":"a","x":-1,"y":1,"width":452,"height":147}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a process flow for the chemical reaction pathway involving a Cu0(surface) and CuL2.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows a detailed process flow for the chemical reaction pathway involving Cu2L2 surface, ZnEt2, and LZnEt, resulting in the formation of Cu0(surface) + Butane, ZnL2, and other intermediates.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems that for both molecules a single ligand is swapped, so a ligand exchange reaction.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The deposition of copper on copper and the creation of zinc surfaces.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Zn2L2, butane\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that there is some form of physisorption. Another possibility is that the oxidation state of the copper changes.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_38_fig_2.jpg","caption":"FIG. 2. Process flow diagram of a complete ALE cycle. Reaction A exposes the substrate surface to HBr gas, followed by a purge of the chamber and Reaction B, which utilizes Ar plasma to strip away a monolayer of the HBr modified surface.","id":"train/atomic-layer-etching/experimental-usecase/38/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/38/fig_2","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/High synergy atomic layer etching of AlGaNGaN.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":1080,"height":381,"image_format":"jpeg","image_sha256":"f220083404cb68b536bf9d3920d8d5fb85d4ff9e9feec090877c62b4bbb74110","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":0,"width":1074,"height":376}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_40_fig_1.jpg","caption":"FIG. 1. Schematic of the TiN ALE process involving exposures to molecular oxygen to oxidize the surface $\\mathrm{O}_2$ , blue dots), followed by $\\mathrm{SF}_6 / \\mathrm{H}_2$ plasma (green dots) to produce volatile etch products.","id":"train/atomic-layer-etching/experimental-usecase/40/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/40/fig_1","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/Isotropic plasma-thermal atomic layer etching of.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":1408,"height":272,"image_format":"jpeg","image_sha256":"f45b3aa21086f79c5ce7d81517db9131dff7208ae59b5e7b5fad089efdf1c0bc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":1407,"height":265}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic illustrating the two-step plasma-thermal ALE cycle for TiN. First, molecular oxygen (blue dots) oxidizes the TiN surface to form a self-limiting TiO2 layer. Second, SF6/H2 plasma generates in-situ HF (green dots) that selectively etches the TiO2 while leaving the underlying TiN intact. The dashed outline in the final panel indicates the removed material, showing net thickness reduction after one complete cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"First, exposure to molecular oxygen gas to oxidize the surface, followed by exposure to SF6/H2 plasma to selectively remove the oxide.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The oxidation step is self-limiting because oxygen diffusion into TiN slows as the TiO2 layer grows thicker. Once a certain oxide thickness forms, the TiO2 layer acts as a diffusion barrier that prevents further oxidation of the underlying TiN. This self-limiting behavior is essential for achieving angstrom-scale etch control, as it ensures a consistent amount of material is converted to oxide in each cycle regardless of exposure time beyond saturation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Blue dots represent molecular oxygen (O2) gas, and green dots represent the SF6/H2 plasma species that form in-situ HF.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Selective etching ensures that only the oxidized surface layer (TiO2) is removed while the underlying TiN remains intact. This selectivity is what enables precise, self-limiting etching within each cycle. Without selectivity, the etchant would continuously remove TiN material, resulting in uncontrolled etching rates. The selectivity arises from the different oxidation states of titanium in TiO2 (4+) versus TiN (3+), which leads to different reactivity with the in-situ HF generated by the SF6/H2 plasma.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_7_figure_2.jpg","caption":"Figure 2. (a) Schmatic from Yoder's early patnt in 1988 showing the layout of the cycles for atomic layer etching of crystaline diamond. The foding of the diamond surface with $\\mathrm{NO_2}$ is alternated with flooding the surface with excited ions. Purging takes place in between these steps. Image from Ref. 20. (b) Saturation curves for atomic layer etching of GaAs by $\\mathbb{C}\\mathbb{I}_2$ dosing and $\\mathrm{Ar^{+}}$ ion irradiation. Data is shown for various $\\mathbb{C}\\mathbb{I}_2$ dosing or feed times. From Ref. 28. Reprinted with pemisio 1993, eier. ) Schmatic of the atomic ayer etching process of silicon by $\\mathrm{Cl}_2$ dosing and $\\mathrm{Ar^{+}}$ ion irradiation. The filled circles represent Cl atoms, the open circles represent Si atoms, and $^+$ represent $\\mathrm{Ar^{+}}$ ions. From Ref. 33. Reprinted with permission. Copyright 1995, American Institute of Physics. The processes shown in (a)(c) are similar and form only one particular embodiment of atomic layer etching processes.","id":"train/atomic-layer-etching/experimental-usecase/7/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/7/figure_2","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"unknown"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/Atomic Layer Etching What CanWe Learn from Atomic Layer Deposition.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1009,"height":1456,"image_format":"jpeg","image_sha256":"35ebc72feb517e83332e2938360881a48792b1e785e1942f0f156f81ce5636f2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":11,"y":11,"width":946,"height":308},{"panel_id":"b","x":148,"y":417,"width":717,"height":485},{"panel_id":"c","x":190,"y":949,"width":638,"height":497}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_7_figure_3.jpg","caption":"Figure 3. Schmatic rretion of one comolete, generalized cycle of (a) atomic layr etching (ALE) and (b) atomic layr deposition (ALD). In (c), the o- t t A and B and the total cycle is divided into four process steps. Step 1 is the adsorption step and step 3 is the activation step. In these steps, the surface is exposed to reactants, here defined as precursor in step 1 and co-reactant in step 3. Steps 2 and 4 are purge steps. The cycles, and hence the process steps, are repeated multiple times when etching or depositing a film. Every cycle removes or adds an atomic layer from or to the film for ALEt and ALD, respectively. The saturation curves show that exposure to the reactants in steps 1 and 3 should be sufficiently long to reach saturation. The progress in between these steps should be sufficiently long to avoid parasitic CVD or parasitic etch reactions that compromise the ALEt or ALD character of the processes.","id":"train/atomic-layer-etching/experimental-usecase/7/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/7/figure_3","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"process flow diagram"},{"panel_id":"c","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/Atomic Layer Etching What CanWe Learn from Atomic Layer Deposition.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1083,"height":730,"image_format":"jpeg","image_sha256":"772e6701bcf041597913f0135481769c91ad90e294153298fdf5a75c3105b961","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":14,"y":547,"width":1062,"height":171},{"panel_id":"b","x":4,"y":311,"width":1072,"height":217},{"panel_id":"a","x":14,"y":54,"width":1064,"height":236}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This diagram shows one complete atomic layer etching (ALEt) cycle. The surface first reacts with a precursor in a self-limiting adsorption step. After a purge, a co-reactant activates the modified surface in another self-limiting step, followed by a final purge. When both exposures reach saturation, exactly one atomic layer is removed per cycle.\"},{\"panel_id\":\"b\",\"text\":\"This diagram shows the same sequence applied to atomic layer deposition (ALD). The key difference is that the activation step leads to material addition instead of removal. When both half-reactions are saturated, each cycle adds a fixed amount of material to the surface.\"},{\"panel_id\":\"c\",\"text\":\"These saturation curves explain why exposure times matter. If exposure is too short, the surface is under-saturated and the process is incomplete. If exposure is too long between steps, unwanted parasitic CVD or etching can occur. Proper saturation ensures true atomic-layer behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Both curves rise quickly at low exposure and then level off at saturation.\\n-Step 1 saturates when all surface sites are filled by the precursor.\\n-Step 3 saturates when the co-reactant finishes reacting with those sites.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Only the chemically modified top surface layer is reactive, while the underlying material remains unreactive.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"When both half-reactions are saturated, each cycle adds the same amount of material everywhere on the surface. This makes the process less sensitive to small changes in gas flow or timing. As a result, the film thickness is more uniform across the wafer and more repeatable from run to run.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In ALD, the activation step adds material to the surface, whereas in ALEt it removes the modified layer.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_9_figure_4.jpg","caption":"Figure 4. (a) Process flow for fabrication of gate-all-around InGaAs fins using an in situ thermal ALE-ALD process. The final InGaAs fins are covered by $4.7 \\mathrm{nm}$ of ALD $\\mathrm{Al}_2\\mathrm{O}_3$ and $20 \\mathrm{nm}$ of ALD W. $\\mathrm{Al}_2\\mathrm{O}_3$ is deposited in situ in the same reactor as the thermal ALE. (b–i) Gallery of TEM images of fabricated InGaAs fins with $W_{\\mathrm{f}} = 43$ to $3 \\mathrm{nm}$ . Fin release occurs for $W_{\\mathrm{f}}$ below $20 \\mathrm{nm}$ . (j) Close-up TEM image of (e). The [111] InAlAs plane underneath InGaAs is revealed during the release process. (k) Close-up TEM image of (i). (l) An InGaAs fin fabricated from the same heterostructure by RIE and digital etch (but not thermal ALE).","id":"train/atomic-layer-etching/experimental-usecase/9/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/9/figure_4","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"},{"panel_id":"g","label":"image panel"},{"panel_id":"h","label":"image panel"},{"panel_id":"i","label":"image panel"},{"panel_id":"j","label":"image panel"},{"panel_id":"k","label":"image panel"},{"panel_id":"l","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/In Situ Thermal Atomic Layer Etching for Sub5 nm InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1164,"height":808,"image_format":"jpeg","image_sha256":"244e2db43a00ec5a4550dcdf69504bc217b016a004d007f5c8138fbcf5147fe7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"d","x":449,"y":329,"width":225,"height":225},{"panel_id":"j","x":901,"y":337,"width":257,"height":238},{"panel_id":"l","x":1044,"y":582,"width":118,"height":228},{"panel_id":"b","x":1,"y":324,"width":223,"height":238},{"panel_id":"c","x":231,"y":314,"width":211,"height":259},{"panel_id":"g","x":238,"y":588,"width":215,"height":215},{"panel_id":"i","x":681,"y":582,"width":221,"height":225},{"panel_id":"k","x":903,"y":576,"width":130,"height":236},{"panel_id":"e","x":675,"y":335,"width":213,"height":228},{"panel_id":"h","x":447,"y":582,"width":225,"height":217},{"panel_id":"f","x":10,"y":582,"width":221,"height":228},{"panel_id":"a","x":71,"y":1,"width":1003,"height":263}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a step-by-step process involving RIE, digital etch, ALE, and ALD techniques.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays close-up transmission electron microscopy images showing the evolution of InGaAs fin structures with thickness of 43 nm\"},{\"panel_id\":\"c\",\"text\":\"The figure displays close-up transmission electron microscopy images showing the evolution of InGaAs fin structures with thickness of 36 nm\"},{\"panel_id\":\"d\",\"text\":\"The figure displays close-up transmission electron microscopy images showing the evolution of InGaAs fin structures with thickness of 30 nm\"},{\"panel_id\":\"e\",\"text\":\"The figure displays close-up transmission electron microscopy images showing the evolution of InGaAs fin structures with thickness of 24 nm\"},{\"panel_id\":\"f\",\"text\":\"The figure displays close-up transmission electron microscopy images showing the evolution of InGaAs fin structures with thickness of 19 nm where fin release is initiated\"},{\"panel_id\":\"g\",\"text\":\"The figure displays close-up transmission electron microscopy images showing the evolution of InGaAs fin structures with thickness of 13 nm with fin released\"},{\"panel_id\":\"h\",\"text\":\"The figure displays close-up transmission electron microscopy images showing the evolution of InGaAs fin structures with thickness of 8 nm with fin released\"},{\"panel_id\":\"i\",\"text\":\"The figure displays close-up transmission electron microscopy images showing the evolution of InGaAs fin structures with thickness of 3 nm with fin released\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"},{\"panel_id\":\"h\",\"text\":\"\"},{\"panel_id\":\"i\",\"text\":\"\"},{\"panel_id\":\"j\",\"text\":\"\"},{\"panel_id\":\"k\",\"text\":\"\"},{\"panel_id\":\"l\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"j\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"These TEM samples have the wafer orientation as [001] and the fin sidewall orientation is [011]. After thermal ALE, the InAlAs [111] plane underneath InGaAs was revealed, suggesting a lower etch rate on [111] plane. This is reasonable because the {111} planes have the highest packing density. Slower etch rates have indeed been observed at higher packing density surfaces in the chemical etching of Si and GaAs by Cl2.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. The narrowest fin with Wf = 3 nm in the upper part and Wf = 4 nm in the middle is obtained with ALE. (image k)\\n2. A TEM image of InGaAs FinFET, fins formed by RIE and digital etch has Wf = 5 nm. (image l)\"}]},{\"panel_id\":\"g\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For very narrow fins, the thermal ALE released the InGaAs fins by undercutting the InAlAs buffer layer due to the selectivity of thermal ALE. Fin release occurs for fin width below 20 nm.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_23_fig_5.jpg","caption":"FIG. 5. HF molecules reaching open areas directly, establishing flux $\\mathsf{F}_{\\mathsf{o}}$ and a surface concentration $\\sigma_{0}$ . Shaded areas beneath the mask are only fluorinated indirectly at flux $\\mathsf{F}_{\\mathsf{s}}$ by desorbed fluorine originating from the open area. $\\sigma_{\\mathrm{s}}$ , the surface concentration in the shade, will be lower than $\\sigma_{0}$ if reactant dosing is not allowed to reach saturation resulting in a lower EPC beneath the mask. Reprinted with permission from Fischer et al., J. Vac. Sci. Technol., A 38, 042601 (2020). Copyright 2020, American Vacuum Society.","id":"train/atomic-layer-etching/simulation-usecase/23/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/23/fig_5","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/Review Paper -- Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":663,"height":464,"image_format":"jpeg","image_sha256":"1251242b8e6b61a2d251cd6084dab0332407a581e0392059031f1e05495615b0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":1,"width":655,"height":460}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_23_fig_7.jpg","caption":"FIG. 7. Schematic illustration of the formation of horizontal devices using a 3D Vertical integration scheme.","id":"train/atomic-layer-etching/simulation-usecase/23/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/23/fig_7","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/Review Paper -- Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":681,"height":355,"image_format":"jpeg","image_sha256":"3516fe811aa9eab8b84e9e567dce23ee621d00b9fd64fc054a754953aa0bf3d3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":679,"height":349}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_24_fig_1.jpg","caption":"Fig. 1. Schematic illustrations of one typical cycle of (a) thermal ALE and (b) ALD.","id":"train/atomic-layer-etching/simulation-usecase/24/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/24/fig_1","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/Review Paper -- Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1214,"height":744,"image_format":"jpeg","image_sha256":"f584e34aaa692c8df3ba24bde10d68be010353711cceb680da68cae7a21f0d44","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":3,"y":383,"width":1212,"height":362},{"panel_id":"a","x":0,"y":9,"width":1212,"height":357}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_1.jpg","caption":"FIG. 1. (Color online) Schematic of the ideal ALE process. (a) Schematic of the initial trench geometry used for ideal ALE simulations. (b) View of the etch front at multiple times, with different colors representing different materials. Time increases from top to bottom, but not with equal steps between images.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_1","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":611,"height":931,"image_format":"jpeg","image_sha256":"f368ae27cd1fdf5bca8cf9e664d61a8bfe7ce54183b81357f63d02b21005e9a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":299,"y":0,"width":308,"height":931},{"panel_id":"a","x":1,"y":-1,"width":285,"height":940}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a silicon structure with the initial trench geometry used for ideal ALE simulations.\"},{\"panel_id\":\"b\",\"text\":\"The figure depicts a process flow of the etch front at multiple times, with different colors representing different materials.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Feature | Aspect Ratio (AR) | Width (nm) |\\n|---------------|--------------------|------------|\\n| Trench 1 | 2 | 30 |\\n| Trench 2 | 10 | 30 |\"},{\"panel_id\":\"b\",\"text\":\"| Step | Description | Species Present |\\n|------|--------------------|-------------------------|\\n| 1 | Initial surface | Si |\\n| 2 | After Cl exposure | SiCl |\\n| 3 | Intermediate | SiCl₂ |\\n| 4 | After Ar⁺ bombard | SiCl₃ + SiCl₂ + SiCl |\\n| 5 | Final surface | Si |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the passivation phase the surface concentration of Cl quickly increases to a steady state coverage. Once Ar+ bombardment begins, the\\npassivated surface is eroded to leave an ideally smooth silicon surface.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The images are intended to show the progress of the chlorination and etching during the ALE period\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The geometry used in the study is includes a shallow feature with an aspect ratio -AR of 2 and a deeper feature with an AR of 10. The aspect ratios were established by pre-etched ideal trenches of different depths in the bulk silicon\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_35_FIG1.jpg","caption":"(b)","id":"train/atomic-layer-etching/simulation-usecase/35/FIG1","sample_id":"atomic-layer-etching/simulation-usecase/35/FIG1","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/Density Functional Theory Study of Oxygen Adsorption on Polymer Surfaces for Atomic-Layer.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":1039,"height":300,"image_format":"jpeg","image_sha256":"7ce2bfd8f41536be52ecc7f2fddd0de535989c922b60bc245be41d69f71db40c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":0,"width":1032,"height":297}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a plasma-based surface processing sequence on a wafer. First, plasma species interact with an organic layer on the substrate. After this step, parts of the organic layer remain and act as a mask. The figure illustrates how plasma exposure leads to mask formation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plasma supplies reactive species that interact with the organic surface layer. These species modify the chemistry of the organic material through activation or removal reactions. This modification step is required before the organic layer can function as a mask.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After plasma exposure, the surface is uniformly modified, while the final state shows selectively retained organic mask regions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After plasma exposure, some organic regions become chemically altered or more resistant. These regions differ from the surrounding material in reactivity. As a result, they protect the underlying substrate during later processing steps.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Plasma processing allows mask formation without additional lithography steps. This can simplify fabrication, improve alignment, and enable selective surface modification at small scales, which is especially useful in nanoscale patterning and surface engineering.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_35_FIG1_a.jpg","caption":"(a)","id":"train/atomic-layer-etching/simulation-usecase/35/FIG1_a","sample_id":"atomic-layer-etching/simulation-usecase/35/FIG1_a","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG1_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG1_a.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/Density Functional Theory Study of Oxygen Adsorption on Polymer Surfaces for Atomic-Layer.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":677,"height":342,"image_format":"jpeg","image_sha256":"4fc6fba8e189737aa664c37222304efc0c497d7af0173560bc4ce61905de949d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":6,"width":673,"height":334}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The first step shows precursor-1 exposure to the masked surface, where the precursor selectively interacts with the exposed regions to form a modified surface layer. This step defines the spatial selectivity of the process and prepares the surface chemistry for the subsequent plasma reaction. After purging excess precursor, a plasma step reacts with the modified layer to enable controlled material transformation or removal, followed by another purge and mask removal. This completes one processing cycle, illustrating how alternating precursor and plasma steps enable precise, stepwise surface control rather than continuous etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The purge steps remove unreacted precursor molecules and gaseous by-products from the chamber. This prevents unwanted gas-phase reactions during the plasma step. By isolating each stage, the plasma interacts only with the surface-modified layer. This improves selectivity and process repeatability.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In a cyclic process, each step is isolated, which allows tighter control over where and how the surface is modified. Continuous plasma exposure tends to be more aggressive and less selective, while the stepwise approach shown here limits reactions to pre-modified regions and reduces damage to underlying layers.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The modified layer acts as a chemically activated region that responds preferentially to the plasma step.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At small length scales, even minor over-etching or unintended reactions can ruin a structure. This cycle limits reactions to short, controlled steps, allowing precise material removal only where the surface has been intentionally modified. That level of control is difficult to achieve with single-step or continuous processes, especially when working with masked or patterned surfaces.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_35_FIG1_b.jpg","caption":"","id":"train/atomic-layer-etching/simulation-usecase/35/FIG1_b","sample_id":"atomic-layer-etching/simulation-usecase/35/FIG1_b","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG1_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG1_b.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/Density Functional Theory Study of Oxygen Adsorption on Polymer Surfaces for Atomic-Layer.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"not_found"},"width":714,"height":375,"image_format":"jpeg","image_sha256":"9523e898cf4d3370f9bef7cd9cfda6ff67d1e388ac08ad5b9c9259c5823ddbfb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":711,"height":370}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a stepwise surface deposition process using two different precursors. In the first step, precursor-1 reacts only with exposed surface regions, forming a fraction of a monolayer. After a purge, precursor-2 reacts with the remaining sites to complete the monolayer. Mask removal then reveals a selectively deposited continuous layer.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the first step, only surface regions that are not protected by the mask are accessible.Precursor-1 can therefore react only at those exposed reactive sites. This naturally limits growth to a fractional monolayer instead of complete surface coverage.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Surface coverage increases from partial coverage to approximately a full monolayer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mask blocks precursor access to selected regions of the surface. As a result, deposition occurs only in exposed areas during each step. This spatial control determines where the final monolayer forms and prevents uniform blanket deposition.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Using two separate precursor steps allows the growth to be self-limiting and highly controlled. Each step targets different surface sites without causing uncontrolled reactions. This approach is especially useful for patterned or nanoscale fabrication where uniform monolayer control is required.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_9_7baa4716e9481baedd41b98299641dd1d9d8c7a8d8822302e69201e249736830.jpg","caption":"Fig. A3. Algorithm for the calculation of time evolution.","id":"train/atomic-layer-etching/simulation-usecase/9/7baa4716e9481baedd41b98299641dd1d9d8c7a8d8822302e69201e249736830","sample_id":"atomic-layer-etching/simulation-usecase/9/7baa4716e9481baedd41b98299641dd1d9d8c7a8d8822302e69201e249736830","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/7baa4716e9481baedd41b98299641dd1d9d8c7a8d8822302e69201e249736830.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/7baa4716e9481baedd41b98299641dd1d9d8c7a8d8822302e69201e249736830.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/Mechanism of photoassisted atomic layer etching of chlorinated Si(111) surfaces Insight.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":639,"height":647,"image_format":"jpeg","image_sha256":"4b7c8bd609f5fe94d1239e15dbab5917cad4650f2dcf5ec436621983330d4df1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":7,"width":626,"height":637}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_49_figure_4.jpg","caption":"Figure 4. a) Schematic illustration of the fabrication process for the $\\mathrm{MoS_2 / TiNTs}$ heterostructure. SEM images of TiNTs (top-view b) before and c) after 200 ALD- $\\mathrm{MoS_2}$ coating. d) Raman spectrum of the TiNTs before and after ALD- $\\mathrm{MoS_2}$ deposition. e,f) TEM and high-resolution TEM images, g) SAED, and h) HAADF-STEM and EDX element mapping of $\\mathrm{MoS_2 / TiNTs}$ heterostructure.","id":"train/atomic-layer-deposition/experimental-usecase/49/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/49/figure_4","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"spectra chart"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"},{"panel_id":"g","label":"image panel"},{"panel_id":"h","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic illustration of the fabrication process of the MoS₂/TiNTs heterostructure, including Ti foil anodization to form Ti nanotubes and subsequent ALD growth of MoS₂.\"},{\"panel_id\":\"b\",\"text\":\"Top-view SEM image of pristine TiNTs, showing a uniform and well-aligned nanotubular morphology.\"},{\"panel_id\":\"c\",\"text\":\"Top-view SEM image of TiNTs after 200 ALD MoS₂ cycles, demonstrating conformal coating of MoS₂ on the nanotube walls.\"},{\"panel_id\":\"d\",\"text\":\"Raman spectra of TiNTs before and after ALD MoS₂ deposition, revealing the characteristic vibrational modes of MoS₂. The Raman spectra confirm successful MoS₂ coating on TiNTs, as evidenced by the appearance of characteristic MoS₂ vibrational modes, while the persistence of TiO₂ peaks indicates laser penetration through the coating to the substrate.\"},{\"panel_id\":\"e\",\"text\":\"Cross-sectional TEM image of the MoS₂/TiNTs heterostructure, highlighting the core–shell structure.\"},{\"panel_id\":\"f\",\"text\":\"High-resolution TEM image showing a continuous and uniform MoS₂ layer on the TiNT surface.\"},{\"panel_id\":\"g\",\"text\":\"Selected-area electron diffraction (SAED) pattern confirming the crystalline nature of the deposited MoS₂.\"},{\"panel_id\":\"h\",\"text\":\"HAADF-STEM image with corresponding EDX elemental maps, confirming the homogeneous distribution of Mo and S over the TiNTs and successful formation of the MoS₂/TiNTs heterostructure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"| Mode label | Raman shift (cm⁻¹) | Relative intensity | Note |\\n|----------|--------------------|--------------------|-------|\\n| E_g | ~145 | High | Main TiO₂ anatase peak |\\n| B₁g | ~395 | Medium | TiO₂ lattice vibration |\\n| A₁g | ~515 | Medium | TiO₂ mode |\\n| E_g | ~640 | Medium–low | Higher-order TiO₂ peak |\\n| LA | ~230 | Medium | Longitudinal acoustic mode MoS₂ |\\n| E₂g¹ | ~380–390 | High | In-plane MoS₂ vibration |\\n| A₁g | ~405–410 | Very high | Out-of-plane MoS₂ vibration |\\n| 2LA(M) | ~450–460 | Medium | Second-order MoS₂ mode |\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"},{\"panel_id\":\"h\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The appearance of two new, distinct peaks in the MoS₂/TiNTs spectrum—the E2g1 and A1gmodes characteristic of crystalline 2H-MoS₂—serves as the primary evidence for successful ALD deposition.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The intensity of the primary TiNT peak (the Eg mode) is significantly attenuated in the MoS₂/TiNTs spectrum. This indicates that the conformal ALD-MoS₂ coating covers the nanotube surfaces, damping their Raman signal.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The frequency difference of ~25 cm⁻¹ is characteristic of few-layer or bulk MoS₂. This confirms the deposited film is crystalline 2H-MoS₂ and suggests it consists of more than a single monolayer.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sharp, well-defined MoS₂ peaks imply the ALD process produced a coating with good crystalline order and minimal defects. This high material quality is essential for achieving optimal electrical conductivity and catalytic activity in functional applications.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":8,"width":996,"height":221},{"panel_id":"b","x":3,"y":246,"width":328,"height":224},{"panel_id":"c","x":336,"y":244,"width":335,"height":224},{"panel_id":"d","x":675,"y":234,"width":323,"height":231},{"panel_id":"e","x":3,"y":471,"width":333,"height":326},{"panel_id":"f","x":331,"y":473,"width":338,"height":326},{"panel_id":"g","x":672,"y":471,"width":326,"height":324},{"panel_id":"h","x":6,"y":801,"width":993,"height":155}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/Shen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":1003,"height":964,"image_format":"jpeg","image_sha256":"1f0dc925c677b93a5b79aea3583d71eca05a8f2efc93b127cb48fdeb5d66c421","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_52_figure_2.jpg","caption":"Figure 2. Schematic representation of an ALD super-cycle consisting of the two individual ALD processes for $\\mathrm{Co_3O_4}$ and $\\mathrm{Li_2CO_3}$ . A cycles of the $\\mathrm{Co_3O_4}$ process are combined with B cycles of the $\\mathrm{Li_2CO_3}$ process. The film-substrate stack is also shown.","id":"train/atomic-layer-deposition/experimental-usecase/52/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/52/figure_2","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A schematic of an ALD super cycle that alternates A cycles of a Co3O4 process using CoCp2 and O2 plasma with B cycles of a Li2CO3 process using LiOtBu and O2 plasma. The arrows indicate that these two sub processes are combined sequentially to build the final film.\"},{\"panel_id\":\"b\",\"text\":\"A layer stack schematic of the sample showing a LiCoO2 electrode on a platinum current collector with a TiO2 adhesion layer on a silicon substrate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Layer | Description |\\n|---|---|\\n| LiCoO₂ electrode | Lithium cobalt oxide electrode layer |\\n| Platinum current collector | Conductive layer made of platinum |\\n| TiO₂ adhesion layer | Adhesive layer of titanium dioxide |\\n| Silicon substrate | Base material of silicon |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The super cycle is a repeated sequence that combines two separate ALD processes. Here, A cycles deposit the Co3O4 component and B cycles deposit the Li2CO3 component. Repeating the combined sequence is the method used to build up the overall lithium cobalt oxide film compositionally from these two constituent processes.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing A cycles increases the relative contribution of the Co3O4 sub process within each super cycle. With B cycles fixed, the fraction of deposition steps associated with the Li2CO3 sub process becomes smaller in comparison. Qualitatively, the deposited material per super cycle would be expected to become more dominated by the Co containing component of the sequence.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The metal precursors are CoCp2 for the Co3O4 loop and LiOtBu for the Li2CO3 loop, and both use O2 plasma as the oxidant step.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"LiCoO2 electrode\\n\\nPlatinum current collector\\n\\nTiO2 adhesion layer\\n\\nSilicon substrate\"}]}]","bbox":[{"panel_id":"a","x":6,"y":4,"width":661,"height":428},{"panel_id":"b","x":5,"y":432,"width":663,"height":228}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/Donders et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":673,"height":670,"image_format":"jpeg","image_sha256":"b5c4765d13fa86e763f1dbf97ddee061db4d7b15243a8932507f71cb7b4891dd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_1.jpg","caption":"Figure 1: Demonstration of zinc oxide ALD using $(\\mathrm{C}_2\\mathrm{H}_5)_2\\mathrm{Zn}$ and $\\mathrm{H}_2\\mathrm{O}$ precursors [2].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_1","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":2,"width":1301,"height":679}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1314,"height":692,"image_format":"jpeg","image_sha256":"efdfdc375a187b5aa04c5e618bd4232ef8b32ea1b3356161aa8866b840b1de97","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_19.jpg","caption":"Figure 19: Schematic of the fabrication process of the thin film alloy of Rh/Ir [191].","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_19","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_19","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":4,"width":999,"height":495}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_19.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_19.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1008,"height":505,"image_format":"jpeg","image_sha256":"e4de4c6155db6b451746446ad19266eacbdc924cbb64ea7d4214c8d480584bf4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_17_figure_3.jpg","caption":"Figure 3: llustration of (a) a cycle of thermal/plasma-enhanced atomic layer deposition, (b) the manufacturing process of hollow inorganic materials or polymer-inorganic composite from a polymer substrate with asymmetrical 3D nanonetworks, and (c) the manufacturing process of hollow inorganic materials or polymer-inorganic composite from a polymer substrate with regular 3D nanonetworks [66]","id":"train/atomic-layer-deposition/simulation-usecase/17/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/17/figure_3","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"process flow diagram"},{"panel_id":"c","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"c","x":7,"y":1005,"width":1298,"height":353},{"panel_id":"b","x":5,"y":656,"width":1306,"height":301},{"panel_id":"a","x":0,"y":37,"width":1295,"height":598}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/17/David Sibanda et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1308,"height":1395,"image_format":"jpeg","image_sha256":"e79a91d37baf34efbed22ec393eabd2888c98216a110095cb44efe3a3a42e823","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_19_figure_1.jpg","caption":"Figure 1. Deposition method of PEALD-IGZO films and device fabrication process Schematic of(a) IGZO deposited with supercyle (b) $\\mathrm { O } _ { 2 }$ and $\\mathrm { N } _ { 2 } \\mathrm { O }$ image.","id":"train/atomic-layer-deposition/simulation-usecase/19/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/19/figure_1","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"process flow diagram"},{"panel_id":"c","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"c","x":11,"y":384,"width":1093,"height":340},{"panel_id":"b","x":508,"y":4,"width":600,"height":370},{"panel_id":"a","x":4,"y":8,"width":480,"height":355}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/19/Dong-Gyu Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1114,"height":728,"image_format":"jpeg","image_sha256":"fa16e12a99c9a4155578432bb35c6d374229f5b49c6b23a0142c2d56fea8d0c4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_25_figure_2.jpg","caption":"Figure 2. Surface saturation flowchart. $-\\mathrm{OH}$ neighbors are hydroxyls within the bridging distance of $3.5\\mathrm{\\AA}$ .","id":"train/atomic-layer-deposition/simulation-usecase/25/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/25/figure_2","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":5,"width":839,"height":592}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/Kristopher S. Brown et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":847,"height":600,"image_format":"jpeg","image_sha256":"eb9a451910537ebd436e8339598bf1a127ce4967e09c6dc7d8a82100cb34eb25","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_10.jpg","caption":"Figure 10. Schematic diagram of $\\mathsf{H}_2\\mathsf{O}$ molecule decomposition in two dimensions. The activation energies for proton transfer are specified by the different c.n. of the two oxygen neighbors. The thicker arrow indicates stronger attraction by one coordinated oxygen to abstract a proton from $\\mathsf{H}_2\\mathsf{O}$ . (Same scheme as Fig. 1). [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_10","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":5,"width":610,"height":380}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":614,"height":386,"image_format":"jpeg","image_sha256":"47d7e8dfe785003c489c3ed9d5c96a43167e90e1af207f7bfb59ae9a3dc065f9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_2.jpg","caption":"Figure 2. Schematic diagram of densification of $\\mathsf{HfX}_2$ into empty cation sites. The presence of more under-coordinated oxygen around the left-hand cation site applies speculatively a stronger attractive force on the $\\mathsf{HfX}_2$ adsorbate than that at the right-hand site. The thicker black arrow indicates the stronger attraction where reverse densification is impossible. Red arrows show migration process. (Same scheme as Fig. 1). [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_2","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":1,"width":604,"height":397}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":608,"height":400,"image_format":"jpeg","image_sha256":"d9e679fc58a9625dc27f9a49a43e68781262dc2722b29b7e3c49204fd43496a1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_3.jpg","caption":"Figure 3. Schematic diagram of densification and migration of $\\mathsf{HfO}_2$ (Same scheme as Fig. 1). Black arrows show potential densification where reverse densification is impossible. Red arrows show migration process. The migration process occurs until a c.n. greater than 2 is obtained by hafnium of the precursor. [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_3","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":2,"width":653,"height":271}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":658,"height":275,"image_format":"jpeg","image_sha256":"19e1f06b73c963defbca6394cc0367d55f7c28665bfbbfbc009db47df1d44c53","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_5.jpg","caption":"Figure 5. Schematic 2D diagram of blocking after adsorption of the undersified hafnium precursor. The filled boxes show blocked sites with respect to further adsorption of $\\mathsf{HfX}_4$ due to the presence of $\\mathsf{HfX}_4$ adsorbate at the surface site on the left (Same scheme as Fig. 1). [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_5","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":5,"width":610,"height":376}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":614,"height":381,"image_format":"jpeg","image_sha256":"0c1062a18a365dbda76b5c90750523d0a875c6f876cdeda9619092c519526a13","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_6.jpg","caption":"Figure 6. Schematic diagram of blocking after densification of the hafnium precursor onto a cation site. The presence of $\\mathsf{HfX}_2$ at the cation site precludes adsorption (filled boxes) at fewer sites than in $\\mathsf{HfX}_4$ at an anion site (Fig. 5). [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_6","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":2,"width":638,"height":463}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":644,"height":469,"image_format":"jpeg","image_sha256":"a3cf0d68cfa98c918e3a14d3f5fd00c112d9f02a1ad315cf708049c7ac0d0f9e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_26_figure_9.jpg","caption":"Figure 9. Schematic diagram of $\\mathsf{H}_2\\mathsf{O}$ molecule adsorption in two dimensions. $\\mathsf{H}_2\\mathsf{O}$ adsorption occurs in the cation site, due to the presence of another $\\mathsf{HfX^{(2)}}$ at the neighboring cation site (cooperative event). Densification of $\\mathsf{H}_2\\mathsf{O}$ molecule (red arrow) occurs randomly into an empty anion site $\\square^{(1)}$ . [Same scheme as Fig. 1]. [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]","id":"train/atomic-layer-deposition/simulation-usecase/26/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/26/figure_9","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":4,"width":609,"height":359}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/26/Mahdi Shirazi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":611,"height":361,"image_format":"jpeg","image_sha256":"6a84adbaa18f456f535dcc7be202d017383d65c5563a109bc4106d9af559a030","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_27_figure_1.jpg","caption":"Figure 1. Schematic representation of a surface using plasma-enhanced atomic layer deposition (PEALD).","id":"train/atomic-layer-deposition/simulation-usecase/27/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/27/figure_1","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"presents a schematic of the plasma-enhanced atomic layer deposition (PEALD) cycle, showing sequential steps including precursor exposure, surface-limited chemisorption, inert gas purging, plasma-activated oxidation, and repetition of the cycle to build a thin film. It highlights how the PEALD process achieves controlled, self-limiting growth on the substrate surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Each stage of the PEALD cycle—precursor exposure, surface saturation, purging, and plasma oxidation—ensures accurate, self-limiting development at the atomic level, making it crucial. This makes it possible for films to be extremely homogeneous and conformal across both simple and intricate 3D elements. For sensitive substrates and next-generation device topologies, the use of plasma increases reactivity, enabling the deposition of thick, superior coatings at lower temperatures.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The plasma oxidation step.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Surface –OH groups, Surface chemisorbed precursor ligands, Oxygen radicals from plasma\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":692,"height":586}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/Martin Becker et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":692,"height":586,"image_format":"jpeg","image_sha256":"e0743fb3e58bec8facf77b9237cfd116455f5abd1483725cd28d9b0c0e871e79","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_27_figure_2.jpg","caption":"Figure 2. Monte Carlo (MC) simulation protocol for growth of PEALD thin films.","id":"train/atomic-layer-deposition/simulation-usecase/27/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/27/figure_2","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure presents the workflow of the Monte Carlo simulation used to relax the hydroxylated surface in the PEALD model. It outlines key computational steps including initializing surface species, performing Monte Carlo moves, evaluating energy changes, accepting or rejecting moves, and iterating until the system reaches equilibrium. This diagram summarizes the simulation protocol that governs surface configuration updates.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Monte Carlo workflow is essential because it allows systematic exploration of surface configurations, energy changes, and relaxation dynamics before simulating individual PEALD reaction steps. By iteratively updating the surface through accepted and rejected moves, the method helps generate a realistic equilibrium surface structure with properly arranged –OH groups. This accurate initial surface state is critical for predicting adsorption behavior, reaction energetics, and overall process simulation fidelity in PEALD modeling.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The energy evaluation and acceptance criterion step.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Distribution of surface –OH groups, Local bonding configuration, Energetic stability of neighboring sites, Surface relaxation pathways\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":447,"height":622}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/Martin Becker et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":447,"height":622,"image_format":"jpeg","image_sha256":"3607d88fa7180620cff110db441cc4a4b9c2590205b94395fd71cec2c47075d5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_31_fig_1.jpg","caption":"FIG. 1. (Color online) Illustration of the ALD growth process.","id":"train/atomic-layer-deposition/simulation-usecase/31/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/31/fig_1","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":4,"width":667,"height":281}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/31/Petteri Peltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":672,"height":289,"image_format":"jpeg","image_sha256":"a445de7662b2d19314d6146481c23c3f6e7842803d0effb52937854252690851","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_3.jpg","caption":"Figure 3. Coding architecture of the multiscale simulation using various programming languages to conjoin the mesoscopic and macroscopic simulations. In a Linux Shell script as an interface between the macroscopic and mesoscopic models, two models are simulated while exchanging pressure, temperature, and source generation (or consumption) with each other.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_3","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 3 presents a process flow diagram of the multiscale simulation architecture, showing how the mesoscopic model (ab initio methods and kinetic Monte Carlo) and the macroscopic CFD model are conjoined via a Linux Shell script interface. The diagram highlights the iterative exchange of pressure, temperature, and source generation/consumption between the models, enabling simultaneous simulation of surface kinetics and macroscopic fluid dynamics.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Category / Component | Description |\\n|---------------------------------|-----------------------------------------------------------------------------|\\n| Overall Description | Diagram showing integration of mesoscopic (kMC) and macroscopic (CFD) simulations via a Linux Shell script, enabling iterative exchange of pressure, temperature, and source terms for multiscale modeling. |\\n| Input: Macroscopic CFD Model | ANSYS Fluent (continuum fluid dynamics, reactor optimization, boundary conditions) |\\n| Input: Mesoscopic kMC Model | Python Script (surface kinetics via kinetic Monte Carlo, based on ab initio QM + statistical mechanics) |\\n| Input: Process Time & Source Terms | Simulation time span and source term definitions for coupling with CFD model |\\n| Data Exchange: UDF | Transfers process time & source terms from mesoscopic → macroscopic model |\\n| Data Exchange: UDM | Feedback loop from mesoscopic model to CFD (surface kinetics → fluid dynamics) |\\n| Output: Coupled Simulation | Combined results showing surface kinetics and macroscopic fluid behavior |\\n| Output: Species Distribution | Time-evolving concentrations and reaction rates across the reactor domain |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Pressure, Temperature, Source generation rates, Source consumption rates\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Integrating the two simulations allows for feedback between surface kinetics and fluid dynamics, providing a more comprehensive and accurate representation of the process than running either model independently.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The architecture uses a Linux Shell script as an interface between the mesoscopic and macroscopic models. It allows the two simulations to exchange key data such as pressure, temperature, and source generation or consumption iteratively. This data exchange enables simultaneous modeling of surface kinetics and macroscopic fluid dynamics, ensuring the multiscale simulation reflects both atomic-level and continuum-level phenomena accurately.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mesoscopic simulation uses Python scripts for kinetic Monte Carlo modeling, and the macroscopic simulation uses ANSYS Fluent for CFD. A Linux Shell script connects the two.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":761,"height":652}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":761,"height":652,"image_format":"jpeg","image_sha256":"7d4264df28453b457e701fa0f087bdf1a657deadaf8f6bc9c925f105d37dee05","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_1.jpg","caption":"Figure 1. The deposition method used to model the $\\mathrm{Al}_2\\mathrm{O}_3$ film growth.","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_1","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows the algorithm used to model Al₂O₃ growth. It tests steric hindrance and overlap before accepting deposition. The loop continues until a full monolayer is formed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The algorithm scans the surface for OH groups.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As coverage increases, steric hindrance and overlap become more frequent. This leads to more rejections and fewer accepted deposition events.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Local geometric availability around the OH group.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Enforcing monolayer completion ensures that the MD simulation is started from a well-defined configuration corresponding to a completed deposition stage, rather than from a partially filled surface.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":3,"width":617,"height":737}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":619,"height":742,"image_format":"jpeg","image_sha256":"6c61daca6e281a1a2524fbadfc3c1a6789ceca9db7d1dbaaa1bfe37c8865a8c3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_55_figure_2.jpg","caption":"Figure 2. The preparation process of the hydroxylated $\\mathrm{Al}_2\\mathrm{O}_3$ surface.","id":"train/atomic-layer-deposition/simulation-usecase/55/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/55/figure_2","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the steps used to prepare a hydroxylated Al₂O₃ surface. The process starts from a high-temperature annealed structure. The surface is then cooled, modified, and relaxed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The initial annealing at 5000 K is used to fully randomize the atomic structure of the Al₂O₃ system. At such high temperature, atoms can move freely and lose memory of any initial ordering. This step ensures that the resulting surface is truly amorphous and not biased by the starting configuration.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Lateral size of the simulation cell\\n-Periodic boundary conditions\\n-Surface area available for hydroxylation\\n-Slab thickness relative to frozen layers\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Hydroxyl groups act as the primary reactive sites for ALD precursor adsorption. Their distribution controls where and how surface reactions occur. Including –OH groups therefore makes the simulated surface chemically realistic for ALD studies.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first annealing occurs at 5000 K to randomize the structure, whereas the second annealing is performed at 1000 K to relax the hydroxylated surface without destroying its topology.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":1,"width":624,"height":176}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/55/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"55","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":628,"height":178,"image_format":"jpeg","image_sha256":"ff4f5a1c0192ac3adaf98329a520f25ebf6ccbd6e347d58aa353f4ee8f4bffea","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_6_figure_8.jpg","caption":"Figure 8. Illustration of the number of publications summarized in Table 2 categorized (a) per year between 2002 and 2021 and (b) per publication country. The search was performed with Web of Science using the following keywords: Atomic Layer Deposition and Theoretical. Irrelevant works were omitted and works combining experiments and theory are not covered in detail.","id":"train/atomic-layer-deposition/simulation-usecase/6/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/6/figure_8","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"process flow diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a process flow for the chemical reaction pathway involving a Cu0(surface) and CuL2.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows a detailed process flow for the chemical reaction pathway involving Cu2L2 surface, ZnEt2, and LZnEt, resulting in the formation of Cu0(surface) + Butane, ZnL2, and other intermediates.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems that for both molecules a single ligand is swapped, so a ligand exchange reaction.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The deposition of copper on copper and the creation of zinc surfaces.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Zn2L2, butane\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that there is some form of physisorption. Another possibility is that the oxidation state of the copper changes.\"}]}]","bbox":[{"panel_id":"b","x":1,"y":149,"width":621,"height":582},{"panel_id":"a","x":-1,"y":1,"width":452,"height":147}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":625,"height":736,"image_format":"jpeg","image_sha256":"8f4678119b064cbeb8b381127f82f98fe2de421ca9c63c661a5c455562017047","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_38_fig_2.jpg","caption":"FIG. 2. Process flow diagram of a complete ALE cycle. Reaction A exposes the substrate surface to HBr gas, followed by a purge of the chamber and Reaction B, which utilizes Ar plasma to strip away a monolayer of the HBr modified surface.","id":"train/atomic-layer-etching/experimental-usecase/38/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/38/fig_2","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":0,"width":1074,"height":376}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/High synergy atomic layer etching of AlGaNGaN.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":1080,"height":381,"image_format":"jpeg","image_sha256":"f220083404cb68b536bf9d3920d8d5fb85d4ff9e9feec090877c62b4bbb74110","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_40_fig_1.jpg","caption":"FIG. 1. Schematic of the TiN ALE process involving exposures to molecular oxygen to oxidize the surface $\\mathrm{O}_2$ , blue dots), followed by $\\mathrm{SF}_6 / \\mathrm{H}_2$ plasma (green dots) to produce volatile etch products.","id":"train/atomic-layer-etching/experimental-usecase/40/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/40/fig_1","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic illustrating the two-step plasma-thermal ALE cycle for TiN. First, molecular oxygen (blue dots) oxidizes the TiN surface to form a self-limiting TiO2 layer. Second, SF6/H2 plasma generates in-situ HF (green dots) that selectively etches the TiO2 while leaving the underlying TiN intact. The dashed outline in the final panel indicates the removed material, showing net thickness reduction after one complete cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"First, exposure to molecular oxygen gas to oxidize the surface, followed by exposure to SF6/H2 plasma to selectively remove the oxide.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The oxidation step is self-limiting because oxygen diffusion into TiN slows as the TiO2 layer grows thicker. Once a certain oxide thickness forms, the TiO2 layer acts as a diffusion barrier that prevents further oxidation of the underlying TiN. This self-limiting behavior is essential for achieving angstrom-scale etch control, as it ensures a consistent amount of material is converted to oxide in each cycle regardless of exposure time beyond saturation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Blue dots represent molecular oxygen (O2) gas, and green dots represent the SF6/H2 plasma species that form in-situ HF.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Selective etching ensures that only the oxidized surface layer (TiO2) is removed while the underlying TiN remains intact. This selectivity is what enables precise, self-limiting etching within each cycle. Without selectivity, the etchant would continuously remove TiN material, resulting in uncontrolled etching rates. The selectivity arises from the different oxidation states of titanium in TiO2 (4+) versus TiN (3+), which leads to different reactivity with the in-situ HF generated by the SF6/H2 plasma.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":1407,"height":265}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/Isotropic plasma-thermal atomic layer etching of.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":1408,"height":272,"image_format":"jpeg","image_sha256":"f45b3aa21086f79c5ce7d81517db9131dff7208ae59b5e7b5fad089efdf1c0bc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_7_figure_2.jpg","caption":"Figure 2. (a) Schmatic from Yoder's early patnt in 1988 showing the layout of the cycles for atomic layer etching of crystaline diamond. The foding of the diamond surface with $\\mathrm{NO_2}$ is alternated with flooding the surface with excited ions. Purging takes place in between these steps. Image from Ref. 20. (b) Saturation curves for atomic layer etching of GaAs by $\\mathbb{C}\\mathbb{I}_2$ dosing and $\\mathrm{Ar^{+}}$ ion irradiation. Data is shown for various $\\mathbb{C}\\mathbb{I}_2$ dosing or feed times. From Ref. 28. Reprinted with pemisio 1993, eier. ) Schmatic of the atomic ayer etching process of silicon by $\\mathrm{Cl}_2$ dosing and $\\mathrm{Ar^{+}}$ ion irradiation. The filled circles represent Cl atoms, the open circles represent Si atoms, and $^+$ represent $\\mathrm{Ar^{+}}$ ions. From Ref. 33. Reprinted with permission. Copyright 1995, American Institute of Physics. The processes shown in (a)(c) are similar and form only one particular embodiment of atomic layer etching processes.","id":"train/atomic-layer-etching/experimental-usecase/7/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/7/figure_2","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":11,"y":11,"width":946,"height":308},{"panel_id":"b","x":148,"y":417,"width":717,"height":485},{"panel_id":"c","x":190,"y":949,"width":638,"height":497}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/Atomic Layer Etching What CanWe Learn from Atomic Layer Deposition.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1009,"height":1456,"image_format":"jpeg","image_sha256":"35ebc72feb517e83332e2938360881a48792b1e785e1942f0f156f81ce5636f2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_7_figure_3.jpg","caption":"Figure 3. Schmatic rretion of one comolete, generalized cycle of (a) atomic layr etching (ALE) and (b) atomic layr deposition (ALD). In (c), the o- t t A and B and the total cycle is divided into four process steps. Step 1 is the adsorption step and step 3 is the activation step. In these steps, the surface is exposed to reactants, here defined as precursor in step 1 and co-reactant in step 3. Steps 2 and 4 are purge steps. The cycles, and hence the process steps, are repeated multiple times when etching or depositing a film. Every cycle removes or adds an atomic layer from or to the film for ALEt and ALD, respectively. The saturation curves show that exposure to the reactants in steps 1 and 3 should be sufficiently long to reach saturation. The progress in between these steps should be sufficiently long to avoid parasitic CVD or parasitic etch reactions that compromise the ALEt or ALD character of the processes.","id":"train/atomic-layer-etching/experimental-usecase/7/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/7/figure_3","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"process flow diagram"},{"panel_id":"c","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This diagram shows one complete atomic layer etching (ALEt) cycle. The surface first reacts with a precursor in a self-limiting adsorption step. After a purge, a co-reactant activates the modified surface in another self-limiting step, followed by a final purge. When both exposures reach saturation, exactly one atomic layer is removed per cycle.\"},{\"panel_id\":\"b\",\"text\":\"This diagram shows the same sequence applied to atomic layer deposition (ALD). The key difference is that the activation step leads to material addition instead of removal. When both half-reactions are saturated, each cycle adds a fixed amount of material to the surface.\"},{\"panel_id\":\"c\",\"text\":\"These saturation curves explain why exposure times matter. If exposure is too short, the surface is under-saturated and the process is incomplete. If exposure is too long between steps, unwanted parasitic CVD or etching can occur. Proper saturation ensures true atomic-layer behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Both curves rise quickly at low exposure and then level off at saturation.\\n-Step 1 saturates when all surface sites are filled by the precursor.\\n-Step 3 saturates when the co-reactant finishes reacting with those sites.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Only the chemically modified top surface layer is reactive, while the underlying material remains unreactive.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"When both half-reactions are saturated, each cycle adds the same amount of material everywhere on the surface. This makes the process less sensitive to small changes in gas flow or timing. As a result, the film thickness is more uniform across the wafer and more repeatable from run to run.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In ALD, the activation step adds material to the surface, whereas in ALEt it removes the modified layer.\"}]}]","bbox":[{"panel_id":"c","x":14,"y":547,"width":1062,"height":171},{"panel_id":"b","x":4,"y":311,"width":1072,"height":217},{"panel_id":"a","x":14,"y":54,"width":1064,"height":236}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/7/Atomic Layer Etching What CanWe Learn from Atomic Layer Deposition.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1083,"height":730,"image_format":"jpeg","image_sha256":"772e6701bcf041597913f0135481769c91ad90e294153298fdf5a75c3105b961","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_9_figure_4.jpg","caption":"Figure 4. (a) Process flow for fabrication of gate-all-around InGaAs fins using an in situ thermal ALE-ALD process. The final InGaAs fins are covered by $4.7 \\mathrm{nm}$ of ALD $\\mathrm{Al}_2\\mathrm{O}_3$ and $20 \\mathrm{nm}$ of ALD W. $\\mathrm{Al}_2\\mathrm{O}_3$ is deposited in situ in the same reactor as the thermal ALE. (b–i) Gallery of TEM images of fabricated InGaAs fins with $W_{\\mathrm{f}} = 43$ to $3 \\mathrm{nm}$ . Fin release occurs for $W_{\\mathrm{f}}$ below $20 \\mathrm{nm}$ . (j) Close-up TEM image of (e). The [111] InAlAs plane underneath InGaAs is revealed during the release process. (k) Close-up TEM image of (i). (l) An InGaAs fin fabricated from the same heterostructure by RIE and digital etch (but not thermal ALE).","id":"train/atomic-layer-etching/experimental-usecase/9/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/9/figure_4","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"image panel"},{"panel_id":"e","label":"image panel"},{"panel_id":"f","label":"image panel"},{"panel_id":"g","label":"image panel"},{"panel_id":"h","label":"image panel"},{"panel_id":"i","label":"image panel"},{"panel_id":"j","label":"image panel"},{"panel_id":"k","label":"image panel"},{"panel_id":"l","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a step-by-step process involving RIE, digital etch, ALE, and ALD techniques.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays close-up transmission electron microscopy images showing the evolution of InGaAs fin structures with thickness of 43 nm\"},{\"panel_id\":\"c\",\"text\":\"The figure displays close-up transmission electron microscopy images showing the evolution of InGaAs fin structures with thickness of 36 nm\"},{\"panel_id\":\"d\",\"text\":\"The figure displays close-up transmission electron microscopy images showing the evolution of InGaAs fin structures with thickness of 30 nm\"},{\"panel_id\":\"e\",\"text\":\"The figure displays close-up transmission electron microscopy images showing the evolution of InGaAs fin structures with thickness of 24 nm\"},{\"panel_id\":\"f\",\"text\":\"The figure displays close-up transmission electron microscopy images showing the evolution of InGaAs fin structures with thickness of 19 nm where fin release is initiated\"},{\"panel_id\":\"g\",\"text\":\"The figure displays close-up transmission electron microscopy images showing the evolution of InGaAs fin structures with thickness of 13 nm with fin released\"},{\"panel_id\":\"h\",\"text\":\"The figure displays close-up transmission electron microscopy images showing the evolution of InGaAs fin structures with thickness of 8 nm with fin released\"},{\"panel_id\":\"i\",\"text\":\"The figure displays close-up transmission electron microscopy images showing the evolution of InGaAs fin structures with thickness of 3 nm with fin released\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"},{\"panel_id\":\"h\",\"text\":\"\"},{\"panel_id\":\"i\",\"text\":\"\"},{\"panel_id\":\"j\",\"text\":\"\"},{\"panel_id\":\"k\",\"text\":\"\"},{\"panel_id\":\"l\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"j\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"These TEM samples have the wafer orientation as [001] and the fin sidewall orientation is [011]. After thermal ALE, the InAlAs [111] plane underneath InGaAs was revealed, suggesting a lower etch rate on [111] plane. This is reasonable because the {111} planes have the highest packing density. Slower etch rates have indeed been observed at higher packing density surfaces in the chemical etching of Si and GaAs by Cl2.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. The narrowest fin with Wf = 3 nm in the upper part and Wf = 4 nm in the middle is obtained with ALE. (image k)\\n2. A TEM image of InGaAs FinFET, fins formed by RIE and digital etch has Wf = 5 nm. (image l)\"}]},{\"panel_id\":\"g\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For very narrow fins, the thermal ALE released the InGaAs fins by undercutting the InAlAs buffer layer due to the selectivity of thermal ALE. Fin release occurs for fin width below 20 nm.\"}]}]","bbox":[{"panel_id":"d","x":449,"y":329,"width":225,"height":225},{"panel_id":"j","x":901,"y":337,"width":257,"height":238},{"panel_id":"l","x":1044,"y":582,"width":118,"height":228},{"panel_id":"b","x":1,"y":324,"width":223,"height":238},{"panel_id":"c","x":231,"y":314,"width":211,"height":259},{"panel_id":"g","x":238,"y":588,"width":215,"height":215},{"panel_id":"i","x":681,"y":582,"width":221,"height":225},{"panel_id":"k","x":903,"y":576,"width":130,"height":236},{"panel_id":"e","x":675,"y":335,"width":213,"height":228},{"panel_id":"h","x":447,"y":582,"width":225,"height":217},{"panel_id":"f","x":10,"y":582,"width":221,"height":228},{"panel_id":"a","x":71,"y":1,"width":1003,"height":263}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/9/In Situ Thermal Atomic Layer Etching for Sub5 nm InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1164,"height":808,"image_format":"jpeg","image_sha256":"244e2db43a00ec5a4550dcdf69504bc217b016a004d007f5c8138fbcf5147fe7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_23_fig_5.jpg","caption":"FIG. 5. HF molecules reaching open areas directly, establishing flux $\\mathsf{F}_{\\mathsf{o}}$ and a surface concentration $\\sigma_{0}$ . Shaded areas beneath the mask are only fluorinated indirectly at flux $\\mathsf{F}_{\\mathsf{s}}$ by desorbed fluorine originating from the open area. $\\sigma_{\\mathrm{s}}$ , the surface concentration in the shade, will be lower than $\\sigma_{0}$ if reactant dosing is not allowed to reach saturation resulting in a lower EPC beneath the mask. Reprinted with permission from Fischer et al., J. Vac. Sci. Technol., A 38, 042601 (2020). Copyright 2020, American Vacuum Society.","id":"train/atomic-layer-etching/simulation-usecase/23/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/23/fig_5","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":1,"width":655,"height":460}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/Review Paper -- Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":663,"height":464,"image_format":"jpeg","image_sha256":"1251242b8e6b61a2d251cd6084dab0332407a581e0392059031f1e05495615b0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_23_fig_7.jpg","caption":"FIG. 7. Schematic illustration of the formation of horizontal devices using a 3D Vertical integration scheme.","id":"train/atomic-layer-etching/simulation-usecase/23/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/23/fig_7","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":3,"width":679,"height":349}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/Review Paper -- Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":681,"height":355,"image_format":"jpeg","image_sha256":"3516fe811aa9eab8b84e9e567dce23ee621d00b9fd64fc054a754953aa0bf3d3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_24_fig_1.jpg","caption":"Fig. 1. Schematic illustrations of one typical cycle of (a) thermal ALE and (b) ALD.","id":"train/atomic-layer-etching/simulation-usecase/24/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/24/fig_1","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":3,"y":383,"width":1212,"height":362},{"panel_id":"a","x":0,"y":9,"width":1212,"height":357}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/Review Paper -- Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1214,"height":744,"image_format":"jpeg","image_sha256":"f584e34aaa692c8df3ba24bde10d68be010353711cceb680da68cae7a21f0d44","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_1.jpg","caption":"FIG. 1. (Color online) Schematic of the ideal ALE process. (a) Schematic of the initial trench geometry used for ideal ALE simulations. (b) View of the etch front at multiple times, with different colors representing different materials. Time increases from top to bottom, but not with equal steps between images.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_1","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a silicon structure with the initial trench geometry used for ideal ALE simulations.\"},{\"panel_id\":\"b\",\"text\":\"The figure depicts a process flow of the etch front at multiple times, with different colors representing different materials.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Feature | Aspect Ratio (AR) | Width (nm) |\\n|---------------|--------------------|------------|\\n| Trench 1 | 2 | 30 |\\n| Trench 2 | 10 | 30 |\"},{\"panel_id\":\"b\",\"text\":\"| Step | Description | Species Present |\\n|------|--------------------|-------------------------|\\n| 1 | Initial surface | Si |\\n| 2 | After Cl exposure | SiCl |\\n| 3 | Intermediate | SiCl₂ |\\n| 4 | After Ar⁺ bombard | SiCl₃ + SiCl₂ + SiCl |\\n| 5 | Final surface | Si |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the passivation phase the surface concentration of Cl quickly increases to a steady state coverage. Once Ar+ bombardment begins, the\\npassivated surface is eroded to leave an ideally smooth silicon surface.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The images are intended to show the progress of the chlorination and etching during the ALE period\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The geometry used in the study is includes a shallow feature with an aspect ratio -AR of 2 and a deeper feature with an AR of 10. The aspect ratios were established by pre-etched ideal trenches of different depths in the bulk silicon\"}]}]","bbox":[{"panel_id":"b","x":299,"y":0,"width":308,"height":931},{"panel_id":"a","x":1,"y":-1,"width":285,"height":940}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":611,"height":931,"image_format":"jpeg","image_sha256":"f368ae27cd1fdf5bca8cf9e664d61a8bfe7ce54183b81357f63d02b21005e9a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_35_FIG1.jpg","caption":"(b)","id":"train/atomic-layer-etching/simulation-usecase/35/FIG1","sample_id":"atomic-layer-etching/simulation-usecase/35/FIG1","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a plasma-based surface processing sequence on a wafer. First, plasma species interact with an organic layer on the substrate. After this step, parts of the organic layer remain and act as a mask. The figure illustrates how plasma exposure leads to mask formation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plasma supplies reactive species that interact with the organic surface layer. These species modify the chemistry of the organic material through activation or removal reactions. This modification step is required before the organic layer can function as a mask.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After plasma exposure, the surface is uniformly modified, while the final state shows selectively retained organic mask regions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After plasma exposure, some organic regions become chemically altered or more resistant. These regions differ from the surrounding material in reactivity. As a result, they protect the underlying substrate during later processing steps.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Plasma processing allows mask formation without additional lithography steps. This can simplify fabrication, improve alignment, and enable selective surface modification at small scales, which is especially useful in nanoscale patterning and surface engineering.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":0,"width":1032,"height":297}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/Density Functional Theory Study of Oxygen Adsorption on Polymer Surfaces for Atomic-Layer.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":1039,"height":300,"image_format":"jpeg","image_sha256":"7ce2bfd8f41536be52ecc7f2fddd0de535989c922b60bc245be41d69f71db40c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_35_FIG1_a.jpg","caption":"(a)","id":"train/atomic-layer-etching/simulation-usecase/35/FIG1_a","sample_id":"atomic-layer-etching/simulation-usecase/35/FIG1_a","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The first step shows precursor-1 exposure to the masked surface, where the precursor selectively interacts with the exposed regions to form a modified surface layer. This step defines the spatial selectivity of the process and prepares the surface chemistry for the subsequent plasma reaction. After purging excess precursor, a plasma step reacts with the modified layer to enable controlled material transformation or removal, followed by another purge and mask removal. This completes one processing cycle, illustrating how alternating precursor and plasma steps enable precise, stepwise surface control rather than continuous etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The purge steps remove unreacted precursor molecules and gaseous by-products from the chamber. This prevents unwanted gas-phase reactions during the plasma step. By isolating each stage, the plasma interacts only with the surface-modified layer. This improves selectivity and process repeatability.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In a cyclic process, each step is isolated, which allows tighter control over where and how the surface is modified. Continuous plasma exposure tends to be more aggressive and less selective, while the stepwise approach shown here limits reactions to pre-modified regions and reduces damage to underlying layers.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The modified layer acts as a chemically activated region that responds preferentially to the plasma step.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At small length scales, even minor over-etching or unintended reactions can ruin a structure. This cycle limits reactions to short, controlled steps, allowing precise material removal only where the surface has been intentionally modified. That level of control is difficult to achieve with single-step or continuous processes, especially when working with masked or patterned surfaces.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":6,"width":673,"height":334}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG1_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG1_a.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/Density Functional Theory Study of Oxygen Adsorption on Polymer Surfaces for Atomic-Layer.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":677,"height":342,"image_format":"jpeg","image_sha256":"4fc6fba8e189737aa664c37222304efc0c497d7af0173560bc4ce61905de949d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_35_FIG1_b.jpg","caption":"","id":"train/atomic-layer-etching/simulation-usecase/35/FIG1_b","sample_id":"atomic-layer-etching/simulation-usecase/35/FIG1_b","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a stepwise surface deposition process using two different precursors. In the first step, precursor-1 reacts only with exposed surface regions, forming a fraction of a monolayer. After a purge, precursor-2 reacts with the remaining sites to complete the monolayer. Mask removal then reveals a selectively deposited continuous layer.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the first step, only surface regions that are not protected by the mask are accessible.Precursor-1 can therefore react only at those exposed reactive sites. This naturally limits growth to a fractional monolayer instead of complete surface coverage.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Surface coverage increases from partial coverage to approximately a full monolayer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mask blocks precursor access to selected regions of the surface. As a result, deposition occurs only in exposed areas during each step. This spatial control determines where the final monolayer forms and prevents uniform blanket deposition.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Using two separate precursor steps allows the growth to be self-limiting and highly controlled. Each step targets different surface sites without causing uncontrolled reactions. This approach is especially useful for patterned or nanoscale fabrication where uniform monolayer control is required.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":711,"height":370}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG1_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG1_b.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/Density Functional Theory Study of Oxygen Adsorption on Polymer Surfaces for Atomic-Layer.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"not_found"},"width":714,"height":375,"image_format":"jpeg","image_sha256":"9523e898cf4d3370f9bef7cd9cfda6ff67d1e388ac08ad5b9c9259c5823ddbfb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_9_7baa4716e9481baedd41b98299641dd1d9d8c7a8d8822302e69201e249736830.jpg","caption":"Fig. A3. Algorithm for the calculation of time evolution.","id":"train/atomic-layer-etching/simulation-usecase/9/7baa4716e9481baedd41b98299641dd1d9d8c7a8d8822302e69201e249736830","sample_id":"atomic-layer-etching/simulation-usecase/9/7baa4716e9481baedd41b98299641dd1d9d8c7a8d8822302e69201e249736830","subset":"process-flow-diagram","split":"train","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":7,"width":626,"height":637}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/7baa4716e9481baedd41b98299641dd1d9d8c7a8d8822302e69201e249736830.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/7baa4716e9481baedd41b98299641dd1d9d8c7a8d8822302e69201e249736830.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/Mechanism of photoassisted atomic layer etching of chlorinated Si(111) surfaces Insight.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":639,"height":647,"image_format":"jpeg","image_sha256":"4b7c8bd609f5fe94d1239e15dbab5917cad4650f2dcf5ec436621983330d4df1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/process-flow-diagram/validation/metadata.jsonl b/subsets/process-flow-diagram/validation/metadata.jsonl index ec11485d4253f8d4d4e63cf50cc580f2020a191c..b2f215de77ce91898889d5bf16f8d5f49000aa0e 100644 --- a/subsets/process-flow-diagram/validation/metadata.jsonl +++ b/subsets/process-flow-diagram/validation/metadata.jsonl @@ -1 +1 @@ -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_19_fig_1.jpg","caption":"Fig. 1. Schematic illustrations of one typical cycle of (a) thermal ALE and (b) ALD.","id":"validation/atomic-layer-etching/experimental-usecase/19/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/19/fig_1","subset":"process-flow-diagram","split":"validation","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"process flow diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1214,"height":744,"image_format":"jpeg","image_sha256":"f584e34aaa692c8df3ba24bde10d68be010353711cceb680da68cae7a21f0d44","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":5,"width":1207,"height":392},{"panel_id":"b","x":3,"y":381,"width":1203,"height":360}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This subfigure illustrates one complete thermal ALE cycle divided into four steps across two half reactions. Half reaction A includes (I) self limiting precursor adsorption forming a surface layer and (II) purge. Half reaction B includes (III) self limiting removal where co reactant converts the surface layer to volatile products and (IV) purge. The net result is atomic layer removal.\"},{\"panel_id\":\"b\",\"text\":\"This subfigure illustrates one complete ALD cycle with the same four step structure. Half reaction A includes (I) self limiting precursor adsorption and (II) purge. Half reaction B includes (III) self limiting co reactant adsorption and (IV) purge. The net result is atomic layer addition, showing ALD as the inverse process of thermal ALE.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The cyan spheres represent precursor molecules, while the red patterned spheres represent co reactant molecules.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both use the same four step cyclic structure with self limiting half reactions, but ALE achieves controlled atomic layer removal while ALD achieves controlled atomic layer addition.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In thermal ALE, step III is a self limiting removal step that converts surface species to volatile products; in ALD, step III is a self limiting adsorption step that adds material to the surface.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Purge steps remove excess unreacted precursor and volatile byproducts from the reaction chamber using inert gas. This prevents unwanted gas phase reactions between precursor and co reactant, maintains the self limiting nature of each half reaction, and ensures precise control over the amount of material removed or deposited per cycle.\"}]}]"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_19_fig_1.jpg","caption":"Fig. 1. Schematic illustrations of one typical cycle of (a) thermal ALE and (b) ALD.","id":"validation/atomic-layer-etching/experimental-usecase/19/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/19/fig_1","subset":"process-flow-diagram","split":"validation","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"process flow diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This subfigure illustrates one complete thermal ALE cycle divided into four steps across two half reactions. Half reaction A includes (I) self limiting precursor adsorption forming a surface layer and (II) purge. Half reaction B includes (III) self limiting removal where co reactant converts the surface layer to volatile products and (IV) purge. The net result is atomic layer removal.\"},{\"panel_id\":\"b\",\"text\":\"This subfigure illustrates one complete ALD cycle with the same four step structure. Half reaction A includes (I) self limiting precursor adsorption and (II) purge. Half reaction B includes (III) self limiting co reactant adsorption and (IV) purge. The net result is atomic layer addition, showing ALD as the inverse process of thermal ALE.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The cyan spheres represent precursor molecules, while the red patterned spheres represent co reactant molecules.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both use the same four step cyclic structure with self limiting half reactions, but ALE achieves controlled atomic layer removal while ALD achieves controlled atomic layer addition.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In thermal ALE, step III is a self limiting removal step that converts surface species to volatile products; in ALD, step III is a self limiting adsorption step that adds material to the surface.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Purge steps remove excess unreacted precursor and volatile byproducts from the reaction chamber using inert gas. This prevents unwanted gas phase reactions between precursor and co reactant, maintains the self limiting nature of each half reaction, and ensures precise control over the amount of material removed or deposited per cycle.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":5,"width":1207,"height":392},{"panel_id":"b","x":3,"y":381,"width":1203,"height":360}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1214,"height":744,"image_format":"jpeg","image_sha256":"f584e34aaa692c8df3ba24bde10d68be010353711cceb680da68cae7a21f0d44","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/process-timing-diagram/test/metadata.jsonl b/subsets/process-timing-diagram/test/metadata.jsonl index 7f3b2fa21835d8cd59c3475aaebac3b9838fbfd6..b1e0f93fb7a26cc80d1a19cebe456de35394b9dd 100644 --- a/subsets/process-timing-diagram/test/metadata.jsonl +++ b/subsets/process-timing-diagram/test/metadata.jsonl @@ -1,5 +1,5 @@ -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_21_fig_1.jpg","caption":"Fig. 1 Schematic of the pulsing sequence of the ALD cycle for depositions of $\\mathrm{Li_2CO_3}$ by (a) thermal and (b) plasma-assisted ALD. The $\\mathrm{H}_2\\mathrm{O}$ dose during the thermal ALD process was only $50~\\mathrm{ms}$ , after which all valves were closed for $4\\mathrm{s}$ to allow for the molecules to react. Therefore, this is referred to as \" $\\mathrm{H}_2\\mathrm{O}$ reaction\".","id":"test/atomic-layer-deposition/experimental-usecase/21/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/21/fig_1","subset":"process-timing-diagram","split":"test","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"process timing diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/N. Hornsveld et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":1300,"height":311,"image_format":"jpeg","image_sha256":"e92fc7d4e8f8709e9b3d99588f0c44168505718f2d89bbfe729f29c6c3194fd5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":735,"height":307},{"panel_id":"b","x":743,"y":4,"width":556,"height":306}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figures show schematic of the pulsing sequence of the ALD cycle for depositions of Li2CO3 by thermal ALD process\"},{\"panel_id\":\"b\",\"text\":\"Schematic of plasma-assisted ALD of Li2CO3\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Step | Time Range (s) |\\n|---------------|-----------------|\\n| LiO'Bu | 0 – 8 |\\n| H₂O reaction | 8 – 12 |\\n| CO₂ | 12 – 18 |\\n| Ar purge | 0 – 6, 12 – 18 |\\n| Total cycle | 0 – 20 |\"},{\"panel_id\":\"b\",\"text\":\"| Step | Time Range (s) |\\n|----------------|-----------------|\\n| LiO'Bu | 0 – 6 |\\n| O₂ | 6 – 10 |\\n| Plasma power | 10 – 12 |\\n| Ar purge | 0 – 4, 10 – 12 |\\n| Total cycle | 0 – 14 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The H2O dose during the thermal ALD process was only 50 ms, after which all valves were closed for 4 s to allow for the molecules to react. Therefore, this is\\nreferred to as “H2O reaction”.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For thermal ALD, the cycle consists of \\n1. the exposure of the substrate to LiOtBu (97%, Sigma Aldrich) lithium precursor\\n2. H2O gas \\n3. CO2 gas \\nall alternated by argon purges\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plasma-assisted ALD process consists of a combination of the substrate exposure to the same lithium precursor and to an O2-fed plasma with a plasma power of 100 W, alternated by argon purging steps. To ensure the gas\\nflow and pressure have stabilized, the reactor was filed with oxygen prior to switching on the plasma source\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_61_figure_1.jpg","caption":"Figure 1. Schematic overview of the three Co ALD processes investigated in this study: (a) AB- $\\mathrm{NH}_3$ , (b) AB- $\\mathrm{H}_2 / \\mathrm{N}_2$ , and (c) ABC- $\\mathrm{N}_2 - \\mathrm{H}_2$ process. The ABC process uses separate $\\mathrm{N}_2$ and $\\mathrm{H}_2$ plasmas exposures. Note that each purge step is followed by a pump step (see Section 2.1 under Experimental Section), which is not shown in the figure for simplicity.","id":"test/atomic-layer-deposition/experimental-usecase/61/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/61/figure_1","subset":"process-timing-diagram","split":"test","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"process timing diagram"},{"panel_id":"c","label":"process timing diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/Vos et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"61","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":425,"height":770,"image_format":"jpeg","image_sha256":"68f10ee2c31c150820f7d191e06e71379fc278673ecb2a6696344bf906544cd1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":4,"width":420,"height":208},{"panel_id":"d","x":4,"y":220,"width":417,"height":288},{"panel_id":"c","x":1,"y":513,"width":418,"height":254}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG10.jpg","caption":"FIG. 10. Illustration depicting the effects of collisions on ion transmission across a sheath and energy deposition at the surface. For ions that cross the sheath without collisions, their kinetic energy when impacting the surface will be commensurate with the plasma potential. If an ion undergoes a charge exchange collision while crossing the sheath, a fast neutral (FN) and a slow ion will be created. The kinetic energy of each particle when hitting the surface will depend on the potential at the location of the charge exchange reaction $(x = a)$ .","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG10","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG10","subset":"process-timing-diagram","split":"test","classification":[{"panel_id":"a","label":"process timing diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":661,"height":394,"image_format":"jpeg","image_sha256":"5f8cdf77515a3ebfca129a03a5373c5aeac3a711930ab5e3022aa2ac76c1c23c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":661,"height":394}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_3_figure_1.jpg","caption":"Figure 1. (a) Schematic diagram of the $\\mathrm{MoS}_2$ one-cycle ALE composed of the Cl-radical adsorption step and the subsequent $\\mathrm{Ar^{+}}$ ion desorption step. (b), (c) Optical microscopic images of the pristine exfoliated bilayer $\\mathrm{MoS}_2$ and monolayer $\\mathrm{MoS}_2$ after one ALE cycle, as shown in (a). (d, e) Raman spectroscopic data of the pristine bilayer $\\mathrm{MoS}_2$ and monolayer $\\mathrm{MoS}_2$ that were observed after the one-cycle ALE. (f-h) TEM cross-sectional images of the pristine bilayer $\\mathrm{MoS}_2$ . (f) as received, (g) after one-cycle ALE, and (h) after two-cycle ALE, exhibiting the removal of one monolayer per cycle.","id":"test/atomic-layer-etching/experimental-usecase/3/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/3/figure_1","subset":"process-timing-diagram","split":"test","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"spectra chart"},{"panel_id":"e","label":"spectra chart"},{"panel_id":"f","label":"image panel"},{"panel_id":"g","label":"image panel"},{"panel_id":"h","label":"image panel"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/Atomic Layer Etching Mechanism of MoS2 for Nanodevices.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":1375,"height":1277,"image_format":"jpeg","image_sha256":"762dc0090a2be4d7195dae6afde6243b2f47533b34ea79a113c87b165e5044a7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":8,"width":501,"height":792},{"panel_id":"b","x":520,"y":16,"width":335,"height":368},{"panel_id":"c","x":520,"y":415,"width":336,"height":377},{"panel_id":"d","x":866,"y":13,"width":507,"height":390},{"panel_id":"e","x":869,"y":415,"width":502,"height":385},{"panel_id":"f","x":32,"y":825,"width":443,"height":443},{"panel_id":"g","x":479,"y":822,"width":438,"height":445},{"panel_id":"h","x":919,"y":821,"width":443,"height":451}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_31_fig_1.jpg","caption":"Fig. 1. Schematic of (a) the unit ALE sequence and (b) the layer-by-layer etch mechanism, illustrating how the initial exposure to Hhfac facilitates surface modification, while subsequent O radicals enable self-limiting removal of the modified region.","id":"test/atomic-layer-etching/experimental-usecase/31/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/31/fig_1","subset":"process-timing-diagram","split":"test","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/Atomic layer etching of high-k oxide thin films.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":1408,"height":544,"image_format":"jpeg","image_sha256":"bf9a4410215eecb913e7ba15763fcc879942425ecd802232086e471cf2620917","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":7,"width":441,"height":536},{"panel_id":"b","x":547,"y":2,"width":862,"height":541}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_21_fig_1.jpg","caption":"Fig. 1 Schematic of the pulsing sequence of the ALD cycle for depositions of $\\mathrm{Li_2CO_3}$ by (a) thermal and (b) plasma-assisted ALD. The $\\mathrm{H}_2\\mathrm{O}$ dose during the thermal ALD process was only $50~\\mathrm{ms}$ , after which all valves were closed for $4\\mathrm{s}$ to allow for the molecules to react. Therefore, this is referred to as \" $\\mathrm{H}_2\\mathrm{O}$ reaction\".","id":"test/atomic-layer-deposition/experimental-usecase/21/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/21/fig_1","subset":"process-timing-diagram","split":"test","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"process timing diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figures show schematic of the pulsing sequence of the ALD cycle for depositions of Li2CO3 by thermal ALD process\"},{\"panel_id\":\"b\",\"text\":\"Schematic of plasma-assisted ALD of Li2CO3\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Step | Time Range (s) |\\n|---------------|-----------------|\\n| LiO'Bu | 0 – 8 |\\n| H₂O reaction | 8 – 12 |\\n| CO₂ | 12 – 18 |\\n| Ar purge | 0 – 6, 12 – 18 |\\n| Total cycle | 0 – 20 |\"},{\"panel_id\":\"b\",\"text\":\"| Step | Time Range (s) |\\n|----------------|-----------------|\\n| LiO'Bu | 0 – 6 |\\n| O₂ | 6 – 10 |\\n| Plasma power | 10 – 12 |\\n| Ar purge | 0 – 4, 10 – 12 |\\n| Total cycle | 0 – 14 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The H2O dose during the thermal ALD process was only 50 ms, after which all valves were closed for 4 s to allow for the molecules to react. Therefore, this is\\nreferred to as “H2O reaction”.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For thermal ALD, the cycle consists of \\n1. the exposure of the substrate to LiOtBu (97%, Sigma Aldrich) lithium precursor\\n2. H2O gas \\n3. CO2 gas \\nall alternated by argon purges\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plasma-assisted ALD process consists of a combination of the substrate exposure to the same lithium precursor and to an O2-fed plasma with a plasma power of 100 W, alternated by argon purging steps. To ensure the gas\\nflow and pressure have stabilized, the reactor was filed with oxygen prior to switching on the plasma source\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":735,"height":307},{"panel_id":"b","x":743,"y":4,"width":556,"height":306}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/N. Hornsveld et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":1300,"height":311,"image_format":"jpeg","image_sha256":"e92fc7d4e8f8709e9b3d99588f0c44168505718f2d89bbfe729f29c6c3194fd5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_61_figure_1.jpg","caption":"Figure 1. Schematic overview of the three Co ALD processes investigated in this study: (a) AB- $\\mathrm{NH}_3$ , (b) AB- $\\mathrm{H}_2 / \\mathrm{N}_2$ , and (c) ABC- $\\mathrm{N}_2 - \\mathrm{H}_2$ process. The ABC process uses separate $\\mathrm{N}_2$ and $\\mathrm{H}_2$ plasmas exposures. Note that each purge step is followed by a pump step (see Section 2.1 under Experimental Section), which is not shown in the figure for simplicity.","id":"test/atomic-layer-deposition/experimental-usecase/61/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/61/figure_1","subset":"process-timing-diagram","split":"test","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"process timing diagram"},{"panel_id":"c","label":"process timing diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":4,"width":420,"height":208},{"panel_id":"d","x":4,"y":220,"width":417,"height":288},{"panel_id":"c","x":1,"y":513,"width":418,"height":254}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/Vos et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"61","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":425,"height":770,"image_format":"jpeg","image_sha256":"68f10ee2c31c150820f7d191e06e71379fc278673ecb2a6696344bf906544cd1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG10.jpg","caption":"FIG. 10. Illustration depicting the effects of collisions on ion transmission across a sheath and energy deposition at the surface. For ions that cross the sheath without collisions, their kinetic energy when impacting the surface will be commensurate with the plasma potential. If an ion undergoes a charge exchange collision while crossing the sheath, a fast neutral (FN) and a slow ion will be created. The kinetic energy of each particle when hitting the surface will depend on the potential at the location of the charge exchange reaction $(x = a)$ .","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG10","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG10","subset":"process-timing-diagram","split":"test","classification":[{"panel_id":"a","label":"process timing diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":661,"height":394}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":661,"height":394,"image_format":"jpeg","image_sha256":"5f8cdf77515a3ebfca129a03a5373c5aeac3a711930ab5e3022aa2ac76c1c23c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_3_figure_1.jpg","caption":"Figure 1. (a) Schematic diagram of the $\\mathrm{MoS}_2$ one-cycle ALE composed of the Cl-radical adsorption step and the subsequent $\\mathrm{Ar^{+}}$ ion desorption step. (b), (c) Optical microscopic images of the pristine exfoliated bilayer $\\mathrm{MoS}_2$ and monolayer $\\mathrm{MoS}_2$ after one ALE cycle, as shown in (a). (d, e) Raman spectroscopic data of the pristine bilayer $\\mathrm{MoS}_2$ and monolayer $\\mathrm{MoS}_2$ that were observed after the one-cycle ALE. (f-h) TEM cross-sectional images of the pristine bilayer $\\mathrm{MoS}_2$ . (f) as received, (g) after one-cycle ALE, and (h) after two-cycle ALE, exhibiting the removal of one monolayer per cycle.","id":"test/atomic-layer-etching/experimental-usecase/3/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/3/figure_1","subset":"process-timing-diagram","split":"test","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"image panel"},{"panel_id":"c","label":"image panel"},{"panel_id":"d","label":"spectra chart"},{"panel_id":"e","label":"spectra chart"},{"panel_id":"f","label":"image panel"},{"panel_id":"g","label":"image panel"},{"panel_id":"h","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":8,"width":501,"height":792},{"panel_id":"b","x":520,"y":16,"width":335,"height":368},{"panel_id":"c","x":520,"y":415,"width":336,"height":377},{"panel_id":"d","x":866,"y":13,"width":507,"height":390},{"panel_id":"e","x":869,"y":415,"width":502,"height":385},{"panel_id":"f","x":32,"y":825,"width":443,"height":443},{"panel_id":"g","x":479,"y":822,"width":438,"height":445},{"panel_id":"h","x":919,"y":821,"width":443,"height":451}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/Atomic Layer Etching Mechanism of MoS2 for Nanodevices.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":1375,"height":1277,"image_format":"jpeg","image_sha256":"762dc0090a2be4d7195dae6afde6243b2f47533b34ea79a113c87b165e5044a7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_31_fig_1.jpg","caption":"Fig. 1. Schematic of (a) the unit ALE sequence and (b) the layer-by-layer etch mechanism, illustrating how the initial exposure to Hhfac facilitates surface modification, while subsequent O radicals enable self-limiting removal of the modified region.","id":"test/atomic-layer-etching/experimental-usecase/31/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/31/fig_1","subset":"process-timing-diagram","split":"test","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":7,"width":441,"height":536},{"panel_id":"b","x":547,"y":2,"width":862,"height":541}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/31/Atomic layer etching of high-k oxide thin films.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":1408,"height":544,"image_format":"jpeg","image_sha256":"bf9a4410215eecb913e7ba15763fcc879942425ecd802232086e471cf2620917","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/process-timing-diagram/train/metadata.jsonl b/subsets/process-timing-diagram/train/metadata.jsonl index 9403abae67ba2dcdc09d3ad4b920e1b6b438bccb..e87b68251e0b4b00cd1191bda9ca8f0f6eccb63a 100644 --- a/subsets/process-timing-diagram/train/metadata.jsonl +++ b/subsets/process-timing-diagram/train/metadata.jsonl @@ -1,12 +1,12 @@ -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_1.jpg","caption":"Figure 1. (a) Conventional ALD sequence and (b) ALD sequence with DFM for the deposition of GeSe films.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_1","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"process timing diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":672,"height":227,"image_format":"jpeg","image_sha256":"c6a80aa4e7e8ea1e1cb4fc95233605369bb8e5fab54deed7e0bf130fa4c6b115","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":14,"y":49,"width":337,"height":176},{"panel_id":"b","x":366,"y":49,"width":304,"height":178}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a dosing scheme for an ALD cycle where HGeCl3 and ((CH3)3Si)2Se are dosed sequantially seperated by argon purges.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates a dosing scheme for an ALD cycle where HGeCl3 and ((CH3)3Si)2Se are dosed sequantially seperated by argon purges. HGeCl3 is dosed with three short pulses.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Compound | Reaction Type |\\n| --- | --- |\\n| HGeCl3 | Addition Reaction |\\n| [(CH3)3Si]2Se | Addition Reaction |\\n| Ar (Purge) | Purging Reaction |\"},{\"panel_id\":\"b\",\"text\":\"| Compound | Reaction Type |\\n| --- | --- |\\n| HGeCl3 | Addition Reaction |\\n| [(CH3)3Si]2Se | Addition Reaction |\\n| Ar (Purge) | Purging Reaction |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"GeSe\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Argon\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With pulsed dosing the nucleation density can be increased, as physisorbed precursors are removed during the pulsing steps.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Temperature\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_36_fig_2.jpg","caption":"Fig. 2 a Schematic representation of the cross-sectional structure of a $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ /AlGaN/AlN/GaN HEMT. b Cross-sectional TEM image of a GaN/AlN/AlGaN/ $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ /Ni/Au structure","id":"train/atomic-layer-deposition/experimental-usecase/36/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/36/fig_2","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"image panel"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/Huan-Yu Shih et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":950,"height":461,"image_format":"jpeg","image_sha256":"2f700171ab3974a6c8fe386a1e63ce93e6666078629293a899dbf629de7ba03b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":4,"width":495,"height":452},{"panel_id":"b","x":501,"y":13,"width":445,"height":441}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_28_fig_5.jpg","caption":"Fig. 5. Variation of the film mass increment during one ALD cycle; the solid line corresponds to $\\mathrm{ZrO_2}$ ALD experiments [10] (the process temperature is $300^{\\circ}\\mathrm{C}$ , the temperature in the $\\mathrm{ZrCl_4}$ effusion cell is $160^{\\circ}\\mathrm{C}$ ), and the dashed line corresponds to the theoretical curve.","id":"train/atomic-layer-deposition/simulation-usecase/28/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/28/fig_5","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/Maxim Deminsky et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":595,"height":502,"image_format":"jpeg","image_sha256":"343c37c2e7674ce2c71e263b66bcb149be094adc6eb594218d284b4d4babbbd6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":8,"width":587,"height":458}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the mass increment over time, showing a rapid increase followed by a plateau and subsequent decrease, related to different processing steps.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time, s | Mass increment, a.u. |\\n|---|---|\\n| 0 | 0.0 |\\n| 10 | 0.0 |\\n| 20 | 0.0 |\\n| 30 | 1.0 |\\n| 40 | 1.0 |\\n| 50 | 0.8 |\\n| 60 | 0.7 |\\n| 80 | 0.65 |\\n| 100 | 0.65 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that the calculation assumes that the full surface is saturated instantly, whereas in reality this requires some time.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The nitrogen is introduced as an inert gas for purging and is not supposed to react at the surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mass gain per cycle is called deltaM0, which is achieved after 84 seconds.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Two\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_16_fig1.jpg","caption":"Fig.1. t t t tion step)).","id":"train/atomic-layer-etching/experimental-usecase/16/fig1","sample_id":"atomic-layer-etching/experimental-usecase/16/fig1","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/Selective atomic layer etching of Al2O3, AlNx and HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":958,"height":786,"image_format":"jpeg","image_sha256":"c9cdc66662cea53881355192745b5ea782da3ff81dd8d1f85d074744c368239f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":958,"height":786}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Time sequence of ALE process parameters over one cycle: ICP power held constant (~1500 W) and Ar flow steady (~50 sccm); CF₄ + H₂ flow (≈10–25 sccm) is pulsed only during the modification step; the DC bias (≈4–6 W) is applied only during the activation step to ion-energize Ar and drive the surface reaction/etch. Cycle boundaries are indicated by vertical dividers.\"},{\"panel_id\":\"b\",\"text\":\"Conceptual illustration of the surface state through the cycle: (1) CF₄ + H₂ plasma deposits a polymer layer on the target surface (modification), (2) the film reaches saturation and uniformly covers the surface, and (3) Ar-ion activation reacts the polymer with the top atomic layer, ejecting by-products and removing a controlled thickness (etch).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Step within cycle | W_DC (W) | W_ICP (W) | CF4+H2 (sccm) | Ar (sccm) |\\n|-------------------------------|--------------|----------------|--------------------|--------------|\\n| Modification step | 0 | 1500 | 10–25 | 50 |\\n| Saturated layer formed | 0 | 1500 | 0| 50 |\\n| Activation step | 4–6 | 1500 | 0| 50 |\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The target layer is first exposed to carbon fluor reactant species. Then, the layer is exposed to Ar, after which the modified layer desorbs.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, in the most right part of subfigure b, there are still CF groups present at the surface. This incomplete removal by the Ar ions can be related to the ion energy as well as the binding energy of these groups to the surface.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first step involves the adsorption of reactant species (fluorine and carbon atoms) onto the surface of the target layer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thickness of the target layer is reduced, as indicated by the \\\"Etched thickness\\\" label in the final schematic.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the third sequence in the ALE cycle, DC bias step.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the second step in the cycle, the C, F atoms on the target surface appear to have reached saturation\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the modification step, a fluorocarbon polymer layer is deposited on the surface using an Ar/CF₄/H₂ plasma without applying a DC bias, leading to surface passivation rather than material removal. In contrast, the activation step employs argon plasma with an applied DC bias, which generates energetic ions that partially remove the polymer layer and activate surface reactions with the underlying material. This contrast between surface protection and controlled ion-driven activation enables layer-by-layer etching.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Gas composition (Ar/CF₄/H₂ versus Ar plasma), Presence or absence of DC bias, Plasma power (ICP power), Process duration for each step, Substrate temperature\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It removes residual reactive gases between modification and activation steps.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both Inductively Coupled Plasma power and Ar flow rate, maintain constant over the process. Instead, DC power increases and decreases just before the pulse of CH4+H2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Plasma atomic layer etching.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The three main parts in this ALE cycle are the dosing of a plasma containing Ar, CH4, and H2 related species, a plasma exposure, solely consisting of Ar, and lastly a Ar plasma exposure with a biased substrate. This last step is introduced to enable energetic ions to bombard the substrate, leading to selective etching.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To be able to reproduce this experiment the dosing times should be present.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Ar flow is continuous and constant at 50 sccm throughout the entire cycle, whereas the CF₄+H₂ flow is pulsed, occurring only during the initial step.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The modification step uses an Ar + CF₄+H₂ plasma, while the activation step uses only Ar plasma.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE cycle has two main steps: modification deposits a fluorocarbon polymer film from CF₄ + H₂ plasma until saturation, and activation uses Ar ion bombardment to drive surface reaction between polymer and target material, removing a precise thickness. Purging between steps removes unreacted precursors and prevents gas-phase mixing. This maintains self-limiting behavior and ensures etching occurs only through the controlled surface reaction mechanism.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ar provides a stable plasma environment for both the polymer-deposition and the activation steps. During modification, it dilutes CF₄+H₂ and helps form a controllable fluorocarbon film without over-fluorinating the surface. During activation, the same Ar plasma is accelerated by the DC bias to supply low-energy ion bombardment, so the chamber does not need to switch gases between steps, which improves repeatability of the self-limiting etch.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Proper timing and synchronization makes sure that the film deposition, activation, and etching happen one after another without overlap. \\nWhen plasma power and gas flow are well-synchronized, the right species are active at the right time resulting in lesser undesired reactions, improving selectivity, and giving precise atomic-layer control.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"CF₄: Active mainly during the modification step, providing fluorine radicals that form a thin fluorocarbon (CFₓ) layer.\\n\\nH₂: Works with CF₄ to regulate plasma, reducing over-fluorination and ensuring balanced polymer growth.\\n\\nAr: Dominates during the activation step, supplying Ar⁺ ions for controlled sputtering and also acts as a purge gas between cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A typical ALE cycle lasts about 10–15 seconds, corresponding to the removal of roughly 0.1–0.2 nm of material. The precise control of timing directly determines the atomic-scale etch depth, linking the process structure (timing) to the resulting property (etch rate).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. \\nSeperating these steps allows independent control over chemical and physical reactions, minimizing surface damage and sidewall erosion. This results in better uniformity, higher selectivity, and improved anisotropy in the etched features.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ICP power and Ar flow are constant throughout the process\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_8.jpg","caption":"Figure 8. Intensities for $\\mathrm{HF^{+}}$ ion signal $(m / z20)$ and $\\mathrm{H}_2\\mathrm{S}^+$ ion signal $(m / z34)$ during 5 exposures of HF to fresh $\\mathrm{ZnS}$ powder at $275^{\\circ}C$ No intensity is observed for the $\\mathrm{H}_2\\mathrm{S}^+$ ion signal.","id":"train/atomic-layer-etching/experimental-usecase/23/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_8","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":669,"height":583,"image_format":"jpeg","image_sha256":"042f0425c58fcdaf22d5101971a59586a45e852ebdfa1476db53f87d2a3736cd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":663,"height":581}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The muliple line chart shows time-resolved QMS ion intensities during five sequential HF pulses to fresh ZnS powder at 275 °C. The HF⁺ signal (m/z 20) displays clear, square-wave pulses, confirming consistent and controlled delivery of HF during each exposure. The H₂S⁺ signal (m/z 34), expected from a ZnS–HF exchange reaction, remains at the baseline with no detectable peaks. This indicates that HF alone does not react with or etch fresh ZnS under these conditions, implying that surface activation or a second precursor is required for ZnS ALE.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (min) | Intensity (Arb. Units) | Species |\\n|-----------|------------------------|------|\\n| 0 | 0 | HF⁺ |\\n| 5 | 10 | HF⁺ |\\n| 10 | 0 | HF⁺ |\\n| 15 | 10 | HF⁺ |\\n| 20 | 0 | HF⁺ |\\n| 25 | 10 | HF⁺ |\\n| 30 | 0 | HF⁺ |\\n| 35 | 10 | HF⁺ |\\n| 40 | 0 | HF⁺ |\\n| 0 | 0 | H₂S⁺ |\\n| 5 | 0 | H₂S⁺ |\\n| 10 | 0 | H₂S⁺ |\\n| 15 | 0 | H₂S⁺ |\\n| 20 | 0 | H₂S⁺ |\\n| 25 | 0 | H₂S⁺ |\\n| 30 | 0 | H₂S⁺ |\\n| 35 | 0 | H₂S⁺ |\\n| 40 | 0 | H₂S⁺ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The lack of H₂S⁺ signal confirms that HF cannot etch the ZnS film on its own. This is critical for ALE because it establishes that the etching is not a continuous, CVD-like process. It proves that a second reactant (like TMA) is required to \\\"activate\\\" or modify the surface before the HF can participate, ensuring the material removal is strictly controlled by the cycle count, not the exposure time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The HF dry etch might be problematic for residue-free surfaces. The trade-off is the dry process's anisotropy and control versus the potential for surface contamination from sulfur residues.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It suggests the sulfur is not released as volatile H₂S. The sulfur likely remains on the surface as a solid residue (e.g., elemental S) or is incorporated into a non-volatile fluoride compound (e.g., SFₓ). This indicates the etching reaction is incomplete or follows a pathway where sulfur is not efficiently liberated as a gas.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies a significant challenge for ALE. If sulfur remains as a solid passivation layer, it will block further reaction in subsequent cycles. An effective ZnS ALE process using HF would require a complementary co-reactant step (like TMA) specifically designed to remove this sulfur residue and regenerate a reactive Zn surface.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_9.jpg","caption":"Figure 9. Time-resolved QMS results during 5 cycles of $\\mathrm{ZnS}$ ALE using HF and TMA as reactants at $275^{\\circ}C$ . $\\mathrm{ZnS}$ ALE starts with TMA exposure. First TMA exposure produces intensity for the $^{68}\\mathrm{Zn}(\\mathrm{CH}_3)_2^+$ ion signal at $m / z$ 98. HF exposure produces intensity for the $\\mathrm{H}_2\\mathrm{S}^+$ ion signal at $m / z$ 34. Subsequent TMA exposures also produce intensity for the $\\mathrm{Al}_2(\\mathrm{CH}_3)_4\\mathrm{F}^+$ ion signal at $m / z$ 133.","id":"train/atomic-layer-etching/experimental-usecase/23/figure_9","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_9","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":664,"height":797,"image_format":"jpeg","image_sha256":"af08cd2993849e3a92f3e9902176820012c2b626f9d7480b3d9d316a7dfaf3b0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":662,"height":790}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"the multiple stacked line chart represents the time-resolved Quadrupole Mass Spectrometry (QMS) data collected over 5 full cycles of ZnS Atomic Layer Etching (ALE) at 275°C using HF and TMA , show clear, repeatable signals for each half-reaction. The first TMA pulse generates the 68Zn–(CH₃)₂⁺ ion at m/z 98, while HF exposure produces the H₂S⁺ signal at m/z 34. Later TMA pulses also generate the Al₂(CH₃)₄F⁺ ion at m/z 133, confirming the expected reaction by-products.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (min) | Intensity (Arb. Units) | Species |\\n|-----------:|------------------------:|-----------------|\\n| 0 | 0 | TMA⁺ |\\n| 10 | 10 | TMA⁺ |\\n| 20 | 10 | TMA⁺ |\\n| 30 | 10 | TMA⁺ |\\n| 40 | 10 | TMA⁺ |\\n| 50 | 10 | TMA⁺ |\\n| 60 | 0 | TMA⁺ |\\n| 0 | 0 | HF⁺ |\\n| 10 | 10 | HF⁺ |\\n| 20 | 10 | HF⁺ |\\n| 30 | 10 | HF⁺ |\\n| 40 | 10 | HF⁺ |\\n| 50 | 10 | HF⁺ |\\n| 60 | 0 | HF⁺ |\\n| 0 | 0 | ⁶⁸Zn(CH₃)₂⁺ |\\n| 10 | 10 | ⁶⁸Zn(CH₃)₂⁺ |\\n| 20 | 10 | ⁶⁸Zn(CH₃)₂⁺ |\\n| 30 | 10 | ⁶⁸Zn(CH₃)₂⁺ |\\n| 40 | 10 | ⁶⁸Zn(CH₃)₂⁺ |\\n| 50 | 10 | ⁶⁸Zn(CH₃)₂⁺ |\\n| 60 | 0 | ⁶⁸Zn(CH₃)₂⁺ |\\n| 0 | 0 | ⁶⁸Zn(CH₃)⁺ |\\n| 10 | 10 | ⁶⁸Zn(CH₃)⁺ |\\n| 20 | 10 | ⁶⁸Zn(CH₃)⁺ |\\n| 30 | 10 | ⁶⁸Zn(CH₃)⁺ |\\n| 40 | 10 | ⁶⁸Zn(CH₃)⁺ |\\n| 50 | 10 | ⁶⁸Zn(CH₃)⁺ |\\n| 60 | 0 | ⁶⁸Zn(CH₃)⁺ |\\n| 0 | 0 | Al₂(CH₃)₄F⁺ |\\n| 10 | 10 | Al₂(CH₃)₄F⁺ |\\n| 20 | 10 | Al₂(CH₃)₄F⁺ |\\n| 30 | 10 | Al₂(CH₃)₄F⁺ |\\n| 40 | 10 | Al₂(CH₃)₄F⁺ |\\n| 50 | 10 | Al₂(CH₃)₄F⁺ |\\n| 60 | 0 | Al₂(CH₃)₄F⁺ |\\n| 0 | 0 | H₂S⁺ |\\n| 10 | 10 | H₂S⁺ |\\n| 20 | 10 | H₂S⁺ |\\n| 30 | 10 | H₂S⁺ |\\n| 40 | 10 | H₂S⁺ |\\n| 50 | 10 | H₂S⁺ |\\n| 60 | 0 | H₂S⁺ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sequence is 1) TMA exposure → Purge → 2) HF exposure → Purge. Each reactant pulse is followed by a purge to remove volatile products and prevent gas-phase reactions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ALE offers superior, atomic-scale thickness control as it is self-limiting. Plasma etching is faster but less controlled, causing depth non-uniformity and damage.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It indicates that HF fluorinates the surface, forming Al–F bonds from previous TMA cycles. The subsequent TMA then reacts with this fluorinated layer, releasing the Al₂(CH₃)₄F⁺ volatile etch byproduct.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the self-limiting surface reactions and low temperature minimize damage. The chemical selectivity between ZnS and InP towards HF/TMA can allow the ZnS to be etched while leaving the InP intact.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_26_fig5.jpg","caption":"Fig.5. (a) Dynamic $\\mathbb{R}_{\\mathbb{on}}$ measurement setting condition. (b) Dynamic $\\mathbb{R}_{\\mathbb{on}}$ ratio comparison of two processes.","id":"train/atomic-layer-etching/experimental-usecase/26/fig5","sample_id":"atomic-layer-etching/experimental-usecase/26/fig5","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/images/fig5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/images/fig5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/A Normally-Off GaN MIS-HEMT Fabricated.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":555,"height":242,"image_format":"jpeg","image_sha256":"a8f774650b5bd92ffa60bbf3f56a6c9009cf510694f35a842cceecba65f27751","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":24,"width":265,"height":213},{"panel_id":"b","x":277,"y":26,"width":278,"height":216}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the Dynamic Ron measurement setting condition for different states (off-state, off-on switching, and on-state) as a function of time.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the dynamic Ron ratio comparison of ALE process and Cl2 plasma etch as a function of the voltage.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time | VD | VG | \\n| --- | --- | --- |\\n| Off-state | 0 | 0 | \\n| Off-on switching | - | - | \\n| On-state | 16 | 5 |\"},{\"panel_id\":\"b\",\"text\":\"| Voltage | ALE process | Cl2 plasma etch |\\n| --- | --- | --- | \\n| 0 | 1.0 | 1.0 |\\n| 200 | 1.3 | 1.2 |\\n| 400 | 1.6 | 1.5 | \\n| 600 | 1.7 | 1.5 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the subfigures a and b, a stress test was performed to evaluate the device's switching loss.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For both the ALE and Cl2 plasma etch processes, the dynamic Ron ratio increases with voltage. However, it is important to note that Cl2 plasma etch process achieves higher dynamic Ron ratios.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the subfigure b, the Cl2 plasma etch achieves the highest ratio, with a value of around 1.7.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Implementing the ALE process reduces the dynamic Ron by 16.2% indicating that it can effectively reduce the trapping states at the interface.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_26_fig_2.jpg","caption":"Fig. 2. AlGaN/GaN one atomic layer etching cycle process. Modification Step and Removal Step are included.","id":"train/atomic-layer-etching/experimental-usecase/26/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/26/fig_2","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"process timing diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/A Normally-Off GaN MIS-HEMT Fabricated.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":553,"height":264,"image_format":"jpeg","image_sha256":"758ba3d8cbbb251b155b675ac3761740ef6f8cbdc485e80c7c4549da5b645e2a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":284,"y":7,"width":268,"height":258},{"panel_id":"a","x":2,"y":6,"width":281,"height":256}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_29_fig_8.jpg","caption":"FIG. 8. Emission intensity at $308\\mathrm{nm}$ as a function of process time: (a) ALE using $\\mathrm{Cl}_2$ plasma and (b) ALE using $\\mathrm{Cl}_2$ gas.","id":"train/atomic-layer-etching/experimental-usecase/29/fig_8","sample_id":"atomic-layer-etching/experimental-usecase/29/fig_8","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/Atomic layer etching of AlGaN using Cl2 and Ar gas.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":536,"height":491,"image_format":"jpeg","image_sha256":"94487d2f3d012ab6577aff46b0cccb2b6585ff449c4f0ba3dc271caa5f388e31","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":6,"width":532,"height":485}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows emission intensity over time for Cl2 plasma and Cl2 gas processes, where Cl2 pulses are seperated by Ar plasma steps.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Process Time (sec) | Emission Intensity (a.u.) Cl2 plasma|Emission Intensity (a.u.) Cl2 gas|\\n|---|---|---|\\n| 0 | 0 |0 |\\n| 25 | 3.5 |0.0|\\n| 75 | 0.5 |0.5|\\n| 125 | 3.5 |0.0|\\n| 175 | 0.5|0.5| \\n| 225 | 3.5 |0.0|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The purging between the Cl2 and Ar step is not sufficient to fully remove Cl from the reactor.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The chlorine can be etched from the surface and from reactor walls, getting back into the plasma, resulting in emission.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"30 seconds.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_32_figure_1.jpg","caption":"Figure 1. (a) The process steps in the ALE cycle for InGaAs etching. (b) Schematic diagram of ICP ion beam source with three-grid assembly used to etch InGaAs by ALE.","id":"train/atomic-layer-etching/experimental-usecase/32/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/32/figure_1","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"apparatus diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/Atomic layer etching of InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":639,"height":1073,"image_format":"jpeg","image_sha256":"625f966b76cbd3cb6619fd648d7aeae3a265207063cfe7ca7d66173cef01958e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":6,"y":484,"width":628,"height":587},{"panel_id":"a","x":4,"y":2,"width":630,"height":444}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Process timing diagram of one ALE cycle for InGaAs etching, showing sequential adsorption using Cl₂ plasma, purge with Ar gas, and desorption using Ar⁺ plasma as a function of time.\"},{\"panel_id\":\"b\",\"text\":\"Schematic of an ICP ion beam source used for ALE of InGaAs, illustrating Ar/Cl₂ gas delivery, RF coil and matching network, plasma generation region, and a three-grid extractor that directs Clₓ⁺/Cl radicals and Ar⁺ ions toward the substrate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The three-grid assembly extracts and accelerates ions from the plasma toward the substrate while controlling ion energy and direction. This enables delivery of Cl-containing ionic species and Ar⁺ with defined energy during the desorption step of ALE, supporting controlled, layer-by-layer material removal.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"InGaAs (Indium Gallium Arsenide).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Adsorption (Cl2 plasma)\\n, 2. Purge (Ar gas)\\n, 3. Desorption (Ar+ plasma)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the desorption step utilizes Ar+ plasma (ions), whereas the purge step uses neutral Ar gas.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_27_fig_2.jpg","caption":"FIG. 2. Schematic of the standard ALE process used in this work. Half-cycle A is a 10 s Ar/SF6 plasma. Half-cycle B is a TMA dose and hold, repeated four times per cycle. Each half-cycle ends with a purge before the next half-cycle. Pressure is maintained by an automated pressure controller and the inductively coupled plasma is operated at 100 W.","id":"train/atomic-layer-etching/simulation-usecase/27/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/27/fig_2","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":1183,"height":380,"image_format":"jpeg","image_sha256":"b8de387d05ddeb27da056ed63d9c19fa0cc68d40669f1f42e1e66adb0a146080","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":1179,"height":374}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Process timing diagram illustrating the standard GaN ALE cycle. Half-cycle A consists of a 5 s gas stabilization followed by a 10 s SF6/Ar plasma (50/150 sccm, 100 mTorr, 100 W ICP) and a 10 s Ar purge. Half-cycle B involves four repeated TMA dose/hold sequences (0.1 s dose, 2 s hold) at 150 mTorr, followed by a 25 s Ar purge.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Step | Duration | Ar Flow (sccm) | SF₆ Flow (sccm) | Pressure (mTorr) | ICP Power (W) |\\n|---|---|---|---|---|---|\\n| Gas stabilise | 5 s | 150 | 50 | 100 | 0 |\\n| Ar/SF₆ Plasma | 10 s | 150 | 50 | 100 | 100 |\\n| Purge | 10 s | 300 | 0 | - | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Step | Duration | Ar Flow (sccm) | TMA Dose | Pressure (mTorr) |\\n|---|---|---|---|---|\\n| Dose | 0.1 s | 10 | On | 150 |\\n| Hold | 2 s | 10 | Off | 150 |\\n| Purge | 25 s | 300 | Off | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The hold step acts as a soak period to increase the exposure time of the TMA precursor to the sample surface. This extended contact time facilitates the ligand-exchange reactions between TMA and the fluorinated GaN surface layer, allowing more complete removal of the modified layer and improving etch efficiency.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Half-cycle A operates at 100 mTorr while half-cycle B operates at 150 mTorr.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50 sccm.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"To limit upstream TMA diffusion into the ICP tube.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_8_fig_2.jpg","caption":"FIG. 2. Schematic of the standard ALE process used in this work. Half-cycle A is a 10 s Ar/SF6 plasma. Half-cycle B is a TMA dose and hold, repeated four times per cycle. Each half-cycle ends with a purge before the next half-cycle. Pressure is maintained by an automated pressure controller and the inductively coupled plasma is operated at 100 W.","id":"train/atomic-layer-etching/simulation-usecase/8/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/8/fig_2","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/Isotropic atomic layer etching of GaN using SF6 plasma and AI(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":1180,"height":380,"image_format":"jpeg","image_sha256":"9dc79fe7b0aa8f325ed2fa6c0f4b450c3f96ff065c77c6b568863a1891c4907d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":1181,"height":376}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A process flow diagram illustrating the sequence of operations and gas flow rates during two half-cycles (A and B) in a plasma process.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s)| Ar (sccm)| SF6 (sccm)|TMA (pulses)|Pressure (mTorr)|ICP(W)|\\n|---|---|---|---|---|---|\\n|0-5|150|50|0|100|0|\\n|5-15|150|50|0|100|100|\\n|15-25|300|0|0|-|0|\\n|25-33.4|10|0|4|150|0|\\n|33.4-58.4|300|0|0|-|0|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Argon is used as processing gas, this is usually done as it is inert.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The gas mixture in the reactor chamber first has to stabilize, so there is a wait step before the plasma is turned on.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TMA is usually dosed in a vapor drawn fashion, this method is not suited to continuous dosing as this will reduce the controllability.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The two half-cycles are seperated by purging steps, where high flows of argon are used to flush the reactor chamber.\"}]}]"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_1.jpg","caption":"Figure 1. (a) Conventional ALD sequence and (b) ALD sequence with DFM for the deposition of GeSe films.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_1","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"process timing diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a dosing scheme for an ALD cycle where HGeCl3 and ((CH3)3Si)2Se are dosed sequantially seperated by argon purges.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates a dosing scheme for an ALD cycle where HGeCl3 and ((CH3)3Si)2Se are dosed sequantially seperated by argon purges. HGeCl3 is dosed with three short pulses.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Compound | Reaction Type |\\n| --- | --- |\\n| HGeCl3 | Addition Reaction |\\n| [(CH3)3Si]2Se | Addition Reaction |\\n| Ar (Purge) | Purging Reaction |\"},{\"panel_id\":\"b\",\"text\":\"| Compound | Reaction Type |\\n| --- | --- |\\n| HGeCl3 | Addition Reaction |\\n| [(CH3)3Si]2Se | Addition Reaction |\\n| Ar (Purge) | Purging Reaction |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"GeSe\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Argon\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With pulsed dosing the nucleation density can be increased, as physisorbed precursors are removed during the pulsing steps.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Temperature\"}]}]","bbox":[{"panel_id":"a","x":14,"y":49,"width":337,"height":176},{"panel_id":"b","x":366,"y":49,"width":304,"height":178}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":672,"height":227,"image_format":"jpeg","image_sha256":"c6a80aa4e7e8ea1e1cb4fc95233605369bb8e5fab54deed7e0bf130fa4c6b115","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_36_fig_2.jpg","caption":"Fig. 2 a Schematic representation of the cross-sectional structure of a $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ /AlGaN/AlN/GaN HEMT. b Cross-sectional TEM image of a GaN/AlN/AlGaN/ $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ /Ni/Au structure","id":"train/atomic-layer-deposition/experimental-usecase/36/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/36/fig_2","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":4,"width":495,"height":452},{"panel_id":"b","x":501,"y":13,"width":445,"height":441}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/36/Huan-Yu Shih et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":950,"height":461,"image_format":"jpeg","image_sha256":"2f700171ab3974a6c8fe386a1e63ce93e6666078629293a899dbf629de7ba03b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_28_fig_5.jpg","caption":"Fig. 5. Variation of the film mass increment during one ALD cycle; the solid line corresponds to $\\mathrm{ZrO_2}$ ALD experiments [10] (the process temperature is $300^{\\circ}\\mathrm{C}$ , the temperature in the $\\mathrm{ZrCl_4}$ effusion cell is $160^{\\circ}\\mathrm{C}$ ), and the dashed line corresponds to the theoretical curve.","id":"train/atomic-layer-deposition/simulation-usecase/28/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/28/fig_5","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the mass increment over time, showing a rapid increase followed by a plateau and subsequent decrease, related to different processing steps.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time, s | Mass increment, a.u. |\\n|---|---|\\n| 0 | 0.0 |\\n| 10 | 0.0 |\\n| 20 | 0.0 |\\n| 30 | 1.0 |\\n| 40 | 1.0 |\\n| 50 | 0.8 |\\n| 60 | 0.7 |\\n| 80 | 0.65 |\\n| 100 | 0.65 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that the calculation assumes that the full surface is saturated instantly, whereas in reality this requires some time.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The nitrogen is introduced as an inert gas for purging and is not supposed to react at the surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mass gain per cycle is called deltaM0, which is achieved after 84 seconds.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Two\"}]}]","bbox":[{"panel_id":"a","x":8,"y":8,"width":587,"height":458}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/Maxim Deminsky et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":595,"height":502,"image_format":"jpeg","image_sha256":"343c37c2e7674ce2c71e263b66bcb149be094adc6eb594218d284b4d4babbbd6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_16_fig1.jpg","caption":"Fig.1. t t t tion step)).","id":"train/atomic-layer-etching/experimental-usecase/16/fig1","sample_id":"atomic-layer-etching/experimental-usecase/16/fig1","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Time sequence of ALE process parameters over one cycle: ICP power held constant (~1500 W) and Ar flow steady (~50 sccm); CF₄ + H₂ flow (≈10–25 sccm) is pulsed only during the modification step; the DC bias (≈4–6 W) is applied only during the activation step to ion-energize Ar and drive the surface reaction/etch. Cycle boundaries are indicated by vertical dividers.\"},{\"panel_id\":\"b\",\"text\":\"Conceptual illustration of the surface state through the cycle: (1) CF₄ + H₂ plasma deposits a polymer layer on the target surface (modification), (2) the film reaches saturation and uniformly covers the surface, and (3) Ar-ion activation reacts the polymer with the top atomic layer, ejecting by-products and removing a controlled thickness (etch).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Step within cycle | W_DC (W) | W_ICP (W) | CF4+H2 (sccm) | Ar (sccm) |\\n|-------------------------------|--------------|----------------|--------------------|--------------|\\n| Modification step | 0 | 1500 | 10–25 | 50 |\\n| Saturated layer formed | 0 | 1500 | 0| 50 |\\n| Activation step | 4–6 | 1500 | 0| 50 |\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The target layer is first exposed to carbon fluor reactant species. Then, the layer is exposed to Ar, after which the modified layer desorbs.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, in the most right part of subfigure b, there are still CF groups present at the surface. This incomplete removal by the Ar ions can be related to the ion energy as well as the binding energy of these groups to the surface.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first step involves the adsorption of reactant species (fluorine and carbon atoms) onto the surface of the target layer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The thickness of the target layer is reduced, as indicated by the \\\"Etched thickness\\\" label in the final schematic.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the third sequence in the ALE cycle, DC bias step.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the second step in the cycle, the C, F atoms on the target surface appear to have reached saturation\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the modification step, a fluorocarbon polymer layer is deposited on the surface using an Ar/CF₄/H₂ plasma without applying a DC bias, leading to surface passivation rather than material removal. In contrast, the activation step employs argon plasma with an applied DC bias, which generates energetic ions that partially remove the polymer layer and activate surface reactions with the underlying material. This contrast between surface protection and controlled ion-driven activation enables layer-by-layer etching.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Gas composition (Ar/CF₄/H₂ versus Ar plasma), Presence or absence of DC bias, Plasma power (ICP power), Process duration for each step, Substrate temperature\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It removes residual reactive gases between modification and activation steps.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both Inductively Coupled Plasma power and Ar flow rate, maintain constant over the process. Instead, DC power increases and decreases just before the pulse of CH4+H2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Plasma atomic layer etching.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The three main parts in this ALE cycle are the dosing of a plasma containing Ar, CH4, and H2 related species, a plasma exposure, solely consisting of Ar, and lastly a Ar plasma exposure with a biased substrate. This last step is introduced to enable energetic ions to bombard the substrate, leading to selective etching.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To be able to reproduce this experiment the dosing times should be present.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Ar flow is continuous and constant at 50 sccm throughout the entire cycle, whereas the CF₄+H₂ flow is pulsed, occurring only during the initial step.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The modification step uses an Ar + CF₄+H₂ plasma, while the activation step uses only Ar plasma.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE cycle has two main steps: modification deposits a fluorocarbon polymer film from CF₄ + H₂ plasma until saturation, and activation uses Ar ion bombardment to drive surface reaction between polymer and target material, removing a precise thickness. Purging between steps removes unreacted precursors and prevents gas-phase mixing. This maintains self-limiting behavior and ensures etching occurs only through the controlled surface reaction mechanism.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ar provides a stable plasma environment for both the polymer-deposition and the activation steps. During modification, it dilutes CF₄+H₂ and helps form a controllable fluorocarbon film without over-fluorinating the surface. During activation, the same Ar plasma is accelerated by the DC bias to supply low-energy ion bombardment, so the chamber does not need to switch gases between steps, which improves repeatability of the self-limiting etch.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Proper timing and synchronization makes sure that the film deposition, activation, and etching happen one after another without overlap. \\nWhen plasma power and gas flow are well-synchronized, the right species are active at the right time resulting in lesser undesired reactions, improving selectivity, and giving precise atomic-layer control.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"CF₄: Active mainly during the modification step, providing fluorine radicals that form a thin fluorocarbon (CFₓ) layer.\\n\\nH₂: Works with CF₄ to regulate plasma, reducing over-fluorination and ensuring balanced polymer growth.\\n\\nAr: Dominates during the activation step, supplying Ar⁺ ions for controlled sputtering and also acts as a purge gas between cycles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A typical ALE cycle lasts about 10–15 seconds, corresponding to the removal of roughly 0.1–0.2 nm of material. The precise control of timing directly determines the atomic-scale etch depth, linking the process structure (timing) to the resulting property (etch rate).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. \\nSeperating these steps allows independent control over chemical and physical reactions, minimizing surface damage and sidewall erosion. This results in better uniformity, higher selectivity, and improved anisotropy in the etched features.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ICP power and Ar flow are constant throughout the process\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":958,"height":786}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/images/fig1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/16/Selective atomic layer etching of Al2O3, AlNx and HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":958,"height":786,"image_format":"jpeg","image_sha256":"c9cdc66662cea53881355192745b5ea782da3ff81dd8d1f85d074744c368239f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_8.jpg","caption":"Figure 8. Intensities for $\\mathrm{HF^{+}}$ ion signal $(m / z20)$ and $\\mathrm{H}_2\\mathrm{S}^+$ ion signal $(m / z34)$ during 5 exposures of HF to fresh $\\mathrm{ZnS}$ powder at $275^{\\circ}C$ No intensity is observed for the $\\mathrm{H}_2\\mathrm{S}^+$ ion signal.","id":"train/atomic-layer-etching/experimental-usecase/23/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_8","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The muliple line chart shows time-resolved QMS ion intensities during five sequential HF pulses to fresh ZnS powder at 275 °C. The HF⁺ signal (m/z 20) displays clear, square-wave pulses, confirming consistent and controlled delivery of HF during each exposure. The H₂S⁺ signal (m/z 34), expected from a ZnS–HF exchange reaction, remains at the baseline with no detectable peaks. This indicates that HF alone does not react with or etch fresh ZnS under these conditions, implying that surface activation or a second precursor is required for ZnS ALE.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (min) | Intensity (Arb. Units) | Species |\\n|-----------|------------------------|------|\\n| 0 | 0 | HF⁺ |\\n| 5 | 10 | HF⁺ |\\n| 10 | 0 | HF⁺ |\\n| 15 | 10 | HF⁺ |\\n| 20 | 0 | HF⁺ |\\n| 25 | 10 | HF⁺ |\\n| 30 | 0 | HF⁺ |\\n| 35 | 10 | HF⁺ |\\n| 40 | 0 | HF⁺ |\\n| 0 | 0 | H₂S⁺ |\\n| 5 | 0 | H₂S⁺ |\\n| 10 | 0 | H₂S⁺ |\\n| 15 | 0 | H₂S⁺ |\\n| 20 | 0 | H₂S⁺ |\\n| 25 | 0 | H₂S⁺ |\\n| 30 | 0 | H₂S⁺ |\\n| 35 | 0 | H₂S⁺ |\\n| 40 | 0 | H₂S⁺ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The lack of H₂S⁺ signal confirms that HF cannot etch the ZnS film on its own. This is critical for ALE because it establishes that the etching is not a continuous, CVD-like process. It proves that a second reactant (like TMA) is required to \\\"activate\\\" or modify the surface before the HF can participate, ensuring the material removal is strictly controlled by the cycle count, not the exposure time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The HF dry etch might be problematic for residue-free surfaces. The trade-off is the dry process's anisotropy and control versus the potential for surface contamination from sulfur residues.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It suggests the sulfur is not released as volatile H₂S. The sulfur likely remains on the surface as a solid residue (e.g., elemental S) or is incorporated into a non-volatile fluoride compound (e.g., SFₓ). This indicates the etching reaction is incomplete or follows a pathway where sulfur is not efficiently liberated as a gas.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies a significant challenge for ALE. If sulfur remains as a solid passivation layer, it will block further reaction in subsequent cycles. An effective ZnS ALE process using HF would require a complementary co-reactant step (like TMA) specifically designed to remove this sulfur residue and regenerate a reactive Zn surface.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":1,"width":663,"height":581}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":669,"height":583,"image_format":"jpeg","image_sha256":"042f0425c58fcdaf22d5101971a59586a45e852ebdfa1476db53f87d2a3736cd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_9.jpg","caption":"Figure 9. Time-resolved QMS results during 5 cycles of $\\mathrm{ZnS}$ ALE using HF and TMA as reactants at $275^{\\circ}C$ . $\\mathrm{ZnS}$ ALE starts with TMA exposure. First TMA exposure produces intensity for the $^{68}\\mathrm{Zn}(\\mathrm{CH}_3)_2^+$ ion signal at $m / z$ 98. HF exposure produces intensity for the $\\mathrm{H}_2\\mathrm{S}^+$ ion signal at $m / z$ 34. Subsequent TMA exposures also produce intensity for the $\\mathrm{Al}_2(\\mathrm{CH}_3)_4\\mathrm{F}^+$ ion signal at $m / z$ 133.","id":"train/atomic-layer-etching/experimental-usecase/23/figure_9","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_9","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"the multiple stacked line chart represents the time-resolved Quadrupole Mass Spectrometry (QMS) data collected over 5 full cycles of ZnS Atomic Layer Etching (ALE) at 275°C using HF and TMA , show clear, repeatable signals for each half-reaction. The first TMA pulse generates the 68Zn–(CH₃)₂⁺ ion at m/z 98, while HF exposure produces the H₂S⁺ signal at m/z 34. Later TMA pulses also generate the Al₂(CH₃)₄F⁺ ion at m/z 133, confirming the expected reaction by-products.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (min) | Intensity (Arb. Units) | Species |\\n|-----------:|------------------------:|-----------------|\\n| 0 | 0 | TMA⁺ |\\n| 10 | 10 | TMA⁺ |\\n| 20 | 10 | TMA⁺ |\\n| 30 | 10 | TMA⁺ |\\n| 40 | 10 | TMA⁺ |\\n| 50 | 10 | TMA⁺ |\\n| 60 | 0 | TMA⁺ |\\n| 0 | 0 | HF⁺ |\\n| 10 | 10 | HF⁺ |\\n| 20 | 10 | HF⁺ |\\n| 30 | 10 | HF⁺ |\\n| 40 | 10 | HF⁺ |\\n| 50 | 10 | HF⁺ |\\n| 60 | 0 | HF⁺ |\\n| 0 | 0 | ⁶⁸Zn(CH₃)₂⁺ |\\n| 10 | 10 | ⁶⁸Zn(CH₃)₂⁺ |\\n| 20 | 10 | ⁶⁸Zn(CH₃)₂⁺ |\\n| 30 | 10 | ⁶⁸Zn(CH₃)₂⁺ |\\n| 40 | 10 | ⁶⁸Zn(CH₃)₂⁺ |\\n| 50 | 10 | ⁶⁸Zn(CH₃)₂⁺ |\\n| 60 | 0 | ⁶⁸Zn(CH₃)₂⁺ |\\n| 0 | 0 | ⁶⁸Zn(CH₃)⁺ |\\n| 10 | 10 | ⁶⁸Zn(CH₃)⁺ |\\n| 20 | 10 | ⁶⁸Zn(CH₃)⁺ |\\n| 30 | 10 | ⁶⁸Zn(CH₃)⁺ |\\n| 40 | 10 | ⁶⁸Zn(CH₃)⁺ |\\n| 50 | 10 | ⁶⁸Zn(CH₃)⁺ |\\n| 60 | 0 | ⁶⁸Zn(CH₃)⁺ |\\n| 0 | 0 | Al₂(CH₃)₄F⁺ |\\n| 10 | 10 | Al₂(CH₃)₄F⁺ |\\n| 20 | 10 | Al₂(CH₃)₄F⁺ |\\n| 30 | 10 | Al₂(CH₃)₄F⁺ |\\n| 40 | 10 | Al₂(CH₃)₄F⁺ |\\n| 50 | 10 | Al₂(CH₃)₄F⁺ |\\n| 60 | 0 | Al₂(CH₃)₄F⁺ |\\n| 0 | 0 | H₂S⁺ |\\n| 10 | 10 | H₂S⁺ |\\n| 20 | 10 | H₂S⁺ |\\n| 30 | 10 | H₂S⁺ |\\n| 40 | 10 | H₂S⁺ |\\n| 50 | 10 | H₂S⁺ |\\n| 60 | 0 | H₂S⁺ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The sequence is 1) TMA exposure → Purge → 2) HF exposure → Purge. Each reactant pulse is followed by a purge to remove volatile products and prevent gas-phase reactions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ALE offers superior, atomic-scale thickness control as it is self-limiting. Plasma etching is faster but less controlled, causing depth non-uniformity and damage.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It indicates that HF fluorinates the surface, forming Al–F bonds from previous TMA cycles. The subsequent TMA then reacts with this fluorinated layer, releasing the Al₂(CH₃)₄F⁺ volatile etch byproduct.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the self-limiting surface reactions and low temperature minimize damage. The chemical selectivity between ZnS and InP towards HF/TMA can allow the ZnS to be etched while leaving the InP intact.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":662,"height":790}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":664,"height":797,"image_format":"jpeg","image_sha256":"af08cd2993849e3a92f3e9902176820012c2b626f9d7480b3d9d316a7dfaf3b0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_26_fig5.jpg","caption":"Fig.5. (a) Dynamic $\\mathbb{R}_{\\mathbb{on}}$ measurement setting condition. (b) Dynamic $\\mathbb{R}_{\\mathbb{on}}$ ratio comparison of two processes.","id":"train/atomic-layer-etching/experimental-usecase/26/fig5","sample_id":"atomic-layer-etching/experimental-usecase/26/fig5","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the Dynamic Ron measurement setting condition for different states (off-state, off-on switching, and on-state) as a function of time.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the dynamic Ron ratio comparison of ALE process and Cl2 plasma etch as a function of the voltage.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time | VD | VG | \\n| --- | --- | --- |\\n| Off-state | 0 | 0 | \\n| Off-on switching | - | - | \\n| On-state | 16 | 5 |\"},{\"panel_id\":\"b\",\"text\":\"| Voltage | ALE process | Cl2 plasma etch |\\n| --- | --- | --- | \\n| 0 | 1.0 | 1.0 |\\n| 200 | 1.3 | 1.2 |\\n| 400 | 1.6 | 1.5 | \\n| 600 | 1.7 | 1.5 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the subfigures a and b, a stress test was performed to evaluate the device's switching loss.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For both the ALE and Cl2 plasma etch processes, the dynamic Ron ratio increases with voltage. However, it is important to note that Cl2 plasma etch process achieves higher dynamic Ron ratios.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the subfigure b, the Cl2 plasma etch achieves the highest ratio, with a value of around 1.7.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Implementing the ALE process reduces the dynamic Ron by 16.2% indicating that it can effectively reduce the trapping states at the interface.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":24,"width":265,"height":213},{"panel_id":"b","x":277,"y":26,"width":278,"height":216}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/images/fig5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/images/fig5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/A Normally-Off GaN MIS-HEMT Fabricated.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":555,"height":242,"image_format":"jpeg","image_sha256":"a8f774650b5bd92ffa60bbf3f56a6c9009cf510694f35a842cceecba65f27751","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_26_fig_2.jpg","caption":"Fig. 2. AlGaN/GaN one atomic layer etching cycle process. Modification Step and Removal Step are included.","id":"train/atomic-layer-etching/experimental-usecase/26/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/26/fig_2","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"process timing diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":284,"y":7,"width":268,"height":258},{"panel_id":"a","x":2,"y":6,"width":281,"height":256}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/26/A Normally-Off GaN MIS-HEMT Fabricated.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":553,"height":264,"image_format":"jpeg","image_sha256":"758ba3d8cbbb251b155b675ac3761740ef6f8cbdc485e80c7c4549da5b645e2a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_29_fig_8.jpg","caption":"FIG. 8. Emission intensity at $308\\mathrm{nm}$ as a function of process time: (a) ALE using $\\mathrm{Cl}_2$ plasma and (b) ALE using $\\mathrm{Cl}_2$ gas.","id":"train/atomic-layer-etching/experimental-usecase/29/fig_8","sample_id":"atomic-layer-etching/experimental-usecase/29/fig_8","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows emission intensity over time for Cl2 plasma and Cl2 gas processes, where Cl2 pulses are seperated by Ar plasma steps.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Process Time (sec) | Emission Intensity (a.u.) Cl2 plasma|Emission Intensity (a.u.) Cl2 gas|\\n|---|---|---|\\n| 0 | 0 |0 |\\n| 25 | 3.5 |0.0|\\n| 75 | 0.5 |0.5|\\n| 125 | 3.5 |0.0|\\n| 175 | 0.5|0.5| \\n| 225 | 3.5 |0.0|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The purging between the Cl2 and Ar step is not sufficient to fully remove Cl from the reactor.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The chlorine can be etched from the surface and from reactor walls, getting back into the plasma, resulting in emission.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"30 seconds.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":6,"width":532,"height":485}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/Atomic layer etching of AlGaN using Cl2 and Ar gas.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":536,"height":491,"image_format":"jpeg","image_sha256":"94487d2f3d012ab6577aff46b0cccb2b6585ff449c4f0ba3dc271caa5f388e31","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_32_figure_1.jpg","caption":"Figure 1. (a) The process steps in the ALE cycle for InGaAs etching. (b) Schematic diagram of ICP ion beam source with three-grid assembly used to etch InGaAs by ALE.","id":"train/atomic-layer-etching/experimental-usecase/32/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/32/figure_1","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"apparatus diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Process timing diagram of one ALE cycle for InGaAs etching, showing sequential adsorption using Cl₂ plasma, purge with Ar gas, and desorption using Ar⁺ plasma as a function of time.\"},{\"panel_id\":\"b\",\"text\":\"Schematic of an ICP ion beam source used for ALE of InGaAs, illustrating Ar/Cl₂ gas delivery, RF coil and matching network, plasma generation region, and a three-grid extractor that directs Clₓ⁺/Cl radicals and Ar⁺ ions toward the substrate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The three-grid assembly extracts and accelerates ions from the plasma toward the substrate while controlling ion energy and direction. This enables delivery of Cl-containing ionic species and Ar⁺ with defined energy during the desorption step of ALE, supporting controlled, layer-by-layer material removal.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"InGaAs (Indium Gallium Arsenide).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Adsorption (Cl2 plasma)\\n, 2. Purge (Ar gas)\\n, 3. Desorption (Ar+ plasma)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the desorption step utilizes Ar+ plasma (ions), whereas the purge step uses neutral Ar gas.\"}]}]","bbox":[{"panel_id":"b","x":6,"y":484,"width":628,"height":587},{"panel_id":"a","x":4,"y":2,"width":630,"height":444}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/Atomic layer etching of InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":639,"height":1073,"image_format":"jpeg","image_sha256":"625f966b76cbd3cb6619fd648d7aeae3a265207063cfe7ca7d66173cef01958e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_27_fig_2.jpg","caption":"FIG. 2. Schematic of the standard ALE process used in this work. Half-cycle A is a 10 s Ar/SF6 plasma. Half-cycle B is a TMA dose and hold, repeated four times per cycle. Each half-cycle ends with a purge before the next half-cycle. Pressure is maintained by an automated pressure controller and the inductively coupled plasma is operated at 100 W.","id":"train/atomic-layer-etching/simulation-usecase/27/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/27/fig_2","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Process timing diagram illustrating the standard GaN ALE cycle. Half-cycle A consists of a 5 s gas stabilization followed by a 10 s SF6/Ar plasma (50/150 sccm, 100 mTorr, 100 W ICP) and a 10 s Ar purge. Half-cycle B involves four repeated TMA dose/hold sequences (0.1 s dose, 2 s hold) at 150 mTorr, followed by a 25 s Ar purge.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Step | Duration | Ar Flow (sccm) | SF₆ Flow (sccm) | Pressure (mTorr) | ICP Power (W) |\\n|---|---|---|---|---|---|\\n| Gas stabilise | 5 s | 150 | 50 | 100 | 0 |\\n| Ar/SF₆ Plasma | 10 s | 150 | 50 | 100 | 100 |\\n| Purge | 10 s | 300 | 0 | - | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Step | Duration | Ar Flow (sccm) | TMA Dose | Pressure (mTorr) |\\n|---|---|---|---|---|\\n| Dose | 0.1 s | 10 | On | 150 |\\n| Hold | 2 s | 10 | Off | 150 |\\n| Purge | 25 s | 300 | Off | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The hold step acts as a soak period to increase the exposure time of the TMA precursor to the sample surface. This extended contact time facilitates the ligand-exchange reactions between TMA and the fluorinated GaN surface layer, allowing more complete removal of the modified layer and improving etch efficiency.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Half-cycle A operates at 100 mTorr while half-cycle B operates at 150 mTorr.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50 sccm.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"To limit upstream TMA diffusion into the ICP tube.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":1179,"height":374}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":1183,"height":380,"image_format":"jpeg","image_sha256":"b8de387d05ddeb27da056ed63d9c19fa0cc68d40669f1f42e1e66adb0a146080","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_8_fig_2.jpg","caption":"FIG. 2. Schematic of the standard ALE process used in this work. Half-cycle A is a 10 s Ar/SF6 plasma. Half-cycle B is a TMA dose and hold, repeated four times per cycle. Each half-cycle ends with a purge before the next half-cycle. Pressure is maintained by an automated pressure controller and the inductively coupled plasma is operated at 100 W.","id":"train/atomic-layer-etching/simulation-usecase/8/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/8/fig_2","subset":"process-timing-diagram","split":"train","classification":[{"panel_id":"a","label":"process timing diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A process flow diagram illustrating the sequence of operations and gas flow rates during two half-cycles (A and B) in a plasma process.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time (s)| Ar (sccm)| SF6 (sccm)|TMA (pulses)|Pressure (mTorr)|ICP(W)|\\n|---|---|---|---|---|---|\\n|0-5|150|50|0|100|0|\\n|5-15|150|50|0|100|100|\\n|15-25|300|0|0|-|0|\\n|25-33.4|10|0|4|150|0|\\n|33.4-58.4|300|0|0|-|0|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Argon is used as processing gas, this is usually done as it is inert.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The gas mixture in the reactor chamber first has to stabilize, so there is a wait step before the plasma is turned on.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TMA is usually dosed in a vapor drawn fashion, this method is not suited to continuous dosing as this will reduce the controllability.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The two half-cycles are seperated by purging steps, where high flows of argon are used to flush the reactor chamber.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":1,"width":1181,"height":376}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/Isotropic atomic layer etching of GaN using SF6 plasma and AI(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":1180,"height":380,"image_format":"jpeg","image_sha256":"9dc79fe7b0aa8f325ed2fa6c0f4b450c3f96ff065c77c6b568863a1891c4907d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/process-timing-diagram/validation/metadata.jsonl b/subsets/process-timing-diagram/validation/metadata.jsonl index c185f342f4e8578e1a74541ec15478f74b203cd8..5189244693b88644a967c6b4d21e6889a9253c69 100644 --- a/subsets/process-timing-diagram/validation/metadata.jsonl +++ b/subsets/process-timing-diagram/validation/metadata.jsonl @@ -1,8 +1,8 @@ -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig_1.jpg","caption":"FIG. 1. (Color online) Schematic diagram of thin film deposition. One deposition cycle consisted of four pulses: $\\mathrm{[(CH_3)_2GaNH_2]_3}$ vapor pulse with 100 SccM Ar carrier gas for $0.1\\mathrm{s}$ an Ar purge gas pulse for $2\\mathrm{s}$ an $\\mathrm{O}_2$ plasma gas pulse for $1\\mathrm{s}$ and an Ar purge gas pulse for $0.4\\mathrm{s}$ The period cycle was repeated until the desired thickness was obtained.","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig_1","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":478,"height":319,"image_format":"jpeg","image_sha256":"6d0b2b61596cbfe69f48b808e3768d1b464d83262209236e5757ebfe0af13d45","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":3,"width":471,"height":313}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The schematic represents the thin film deposition process over time. One deposition cycle consisted of four pulses [(CH3)2GaNH2]3 vapor pulse with 100-SCCM Ar carrier gas for 0.1 s, an Ar purge gas pulse for 2 s, an O2 plasma gas pulse for 1 s, and an Ar purge gas pulse for 0.4 s.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time segment | Ga source | Ar purge (1) | O₂ plasma | Ar purge (2) |\\n|-------------|-----------|--------------|-----------|--------------|\\n| t₁ | ON | OFF | OFF | OFF |\\n| t₂ | OFF | ON | OFF | OFF |\\n| t₃ | OFF | OFF | ON | OFF |\\n| t₄ | OFF | ON | OFF | OFF |\\n| t₅ | ON | OFF | OFF | OFF |\\n| t₆ | OFF | ON | OFF | OFF |\\n| t₇ | OFF | OFF | ON | OFF |\\n| t₈ | OFF | ON | OFF | OFF |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1) Metal precursor pulse 0.1 s - [(CH₃)₂GaNH₂]₃ vapor in Ar. → 2) Purge 2.0 s - Ar purge.→ 3) 1.0 s - O₂ plasma pulse → 4) 0.4 s - Ar purge.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thermal ALD: Uses a thermal oxidant (O₃) in step 3 to form the metal-oxide layer. PE-ALD: Uses a plasma oxidant (O₂ plasma) in step 3 to form the metal-oxide layer. Both cycles retain the same fundamental sequence of precursor pulse, purge, reactant pulse, and purge.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film shifts from being formed via a slower, thermally activated oxidation reaction to a more energetic, plasma-activated process. This introduces highly reactive oxygen radicals (O⁺) that create a denser Ga–O network with fewer carbon/hydrogen impurities from incomplete ligand removal. The result is a film with superior stoichiometry, higher density, and potentially a different defect profile compared to thermal ALD.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To achieve a higher-quality, denser Ga₂O₃ dielectric at a lower substrate temperature. The O₂ plasma provides more aggressive oxidation, leading to films with:\\nLower impurity content (reduced C/H).\\n\\nHigher dielectric breakdown strength.\\n\\nBetter performance in high-field, high-temperature device operation.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG1.jpg","caption":"FIG. 1. Schematic of the standard recipe of one cycle of the PA-ALD process of NiO $_{\\text{Alanis}}$ at $150^{\\circ}\\text{C}$ .","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG1","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG1","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":678,"height":477,"image_format":"jpeg","image_sha256":"eeb61d9d9f85262d72b0888d3f0e451fe2e9e473194956eab4c571fa59de96ce","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":10,"width":667,"height":468}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows one complete NiO ALD cycle represented as a time-sequenced process timing diagram. The Alanis precursor is pulsed briefly at the beginning of the cycle, followed by a purge to remove excess precursor and reaction by-products. An O₂ plasma step is then applied for a longer duration to oxidize the surface-bound species and form NiO. A final purge clears remaining reactive species before the next cycle begins. The diagram emphasizes the strictly sequential, non-overlapping nature of the ALD steps.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The timing diagram shows that the Alanis pulse precedes the O₂ plasma step, indicating a sequential process. This ordering ensures that the precursor exposure occurs first, followed by a separate plasma step rather than overlapping signals. The clear separation visible in the figure suggests that the two steps are intentionally isolated within the cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Separates the Alanis pulse from the O₂ plasma step\\n-Removes residual precursor signal before plasma activation\\n-Ensures non-overlapping process steps within the cycle\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The timing diagram shows that the O₂ plasma step spans a much longer time interval than the Alanis pulse. This indicates that the plasma exposure is designed to occupy a larger fraction of the cycle. In contrast, the precursor pulse is brief and confined to the early part of the sequence.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The diagram shows that each step occurs in a fixed order without temporal overlap. This consistent sequencing suggests that the same surface state is re-established at the start of each cycle. Such repeatable timing is consistent with controlled and reproducible ALD operation as implied by the diagram structure.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig4.jpg","caption":"Fig.4 Schatic f th A process us in this work. Half-cycle A consts of Hfac dose/old steps, which are reeated 15 times per cycle (unles stated otherwise). Half-cycle B is the $\\mathsf{H}_{2}$ plasma at a pressure of 300 mTorr and 600 W power. Each half-cycle is followed by a 10 s Ar purge with the APC fully open for maximum pumping efficiency.","id":"validation/atomic-layer-etching/experimental-usecase/10/fig4","sample_id":"atomic-layer-etching/experimental-usecase/10/fig4","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":1123,"height":453,"image_format":"jpeg","image_sha256":"bfc931e0010a5d40bd97cb12ac65090e9eb9ecdfcce65132b2de42bc2af56595","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1123,"height":453}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_15_fig_10.jpg","caption":"FIG. 10. Comparison of etching with (a) continuous and simultaneous delivery of plasma species, (b) pulsed substrate bias pulsing to modulate ion energy, while keeping neutral delivery is fixed, and (c) ALE with fully separation of neutrals and ions, using gas cycling to also modulate the plasma neutrals. In this schematic, neutrals represent reaction A and ion energy represents reaction B.","id":"validation/atomic-layer-etching/experimental-usecase/15/fig_10","sample_id":"atomic-layer-etching/experimental-usecase/15/fig_10","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"process timing diagram"},{"panel_id":"c","label":"process timing diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":470,"height":834,"image_format":"jpeg","image_sha256":"215874b2aa8dc2201a5f14346f2981c95557c56da3726c2715f40ac628733741","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":2,"y":548,"width":469,"height":282},{"panel_id":"b","x":2,"y":221,"width":465,"height":303},{"panel_id":"a","x":5,"y":0,"width":460,"height":213}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_15_fig_4.jpg","caption":"FiG. 4. Total amount of material removed in three sequential ALE cycles: $\\mathrm{A}\\rightarrow \\mathrm{B}\\rightarrow \\mathrm{A}\\rightarrow \\mathrm{B}\\rightarrow \\mathrm{A}\\rightarrow \\mathrm{B}$ The amount of material etched per cycle is EPC. Ideally, removal only occurs during reaction B and is selflimiting. The time needed to switch between reactions is indicated by gray zones.","id":"validation/atomic-layer-etching/experimental-usecase/15/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/15/fig_4","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":555,"height":433,"image_format":"jpeg","image_sha256":"f8b31b6c272bb99b59aa80e11d04e382fa8abbe3f0980ea7696214179baa2069","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":550,"height":433}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_5_figure_1.jpg","caption":"Figure 1. (a) The process steps in the ALE cycle for InGaAs etching. (b) Schematic diagram of ICP ion beam source with three-grid assembly used to etch InGaAs by ALE.","id":"validation/atomic-layer-etching/experimental-usecase/5/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/5/figure_1","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"apparatus diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/Atomic layer etching of InGaAs by controlled ion beam.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":639,"height":1073,"image_format":"jpeg","image_sha256":"625f966b76cbd3cb6619fd648d7aeae3a265207063cfe7ca7d66173cef01958e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":1,"y":452,"width":632,"height":615},{"panel_id":"a","x":4,"y":2,"width":637,"height":445}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_22_fig_10.jpg","caption":"FIG. 10. Comparison of etching with (a) continuous and simultaneous delivery of plasma species, (b) pulsed substrate bias pulsing to modulate ion energy, while keeping neutral delivery is fixed, and (c) ALE with fully separation of neutrals and ions, using gas cycling to also modulate the plasma neutrals. In this schematic, neutrals represent reaction A and ion energy represents reaction B.","id":"validation/atomic-layer-etching/simulation-usecase/22/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/22/fig_10","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"process timing diagram"},{"panel_id":"c","label":"process timing diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/Review Paper -- Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":470,"height":834,"image_format":"jpeg","image_sha256":"215874b2aa8dc2201a5f14346f2981c95557c56da3726c2715f40ac628733741","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":1,"y":546,"width":462,"height":282},{"panel_id":"b","x":6,"y":219,"width":459,"height":316},{"panel_id":"a","x":1,"y":1,"width":461,"height":203}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_22_fig_4.jpg","caption":"FiG. 4. Total amount of material removed in three sequential ALE cycles: $\\mathrm{A}\\rightarrow \\mathrm{B}\\rightarrow \\mathrm{A}\\rightarrow \\mathrm{B}\\rightarrow \\mathrm{A}\\rightarrow \\mathrm{B}$ The amount of material etched per cycle is EPC. Ideally, removal only occurs during reaction B and is selflimiting. The time needed to switch between reactions is indicated by gray zones.","id":"validation/atomic-layer-etching/simulation-usecase/22/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/22/fig_4","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/Review Paper -- Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":555,"height":433,"image_format":"jpeg","image_sha256":"f8b31b6c272bb99b59aa80e11d04e382fa8abbe3f0980ea7696214179baa2069","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":551,"height":428}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig_1.jpg","caption":"FIG. 1. (Color online) Schematic diagram of thin film deposition. One deposition cycle consisted of four pulses: $\\mathrm{[(CH_3)_2GaNH_2]_3}$ vapor pulse with 100 SccM Ar carrier gas for $0.1\\mathrm{s}$ an Ar purge gas pulse for $2\\mathrm{s}$ an $\\mathrm{O}_2$ plasma gas pulse for $1\\mathrm{s}$ and an Ar purge gas pulse for $0.4\\mathrm{s}$ The period cycle was repeated until the desired thickness was obtained.","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig_1","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The schematic represents the thin film deposition process over time. One deposition cycle consisted of four pulses [(CH3)2GaNH2]3 vapor pulse with 100-SCCM Ar carrier gas for 0.1 s, an Ar purge gas pulse for 2 s, an O2 plasma gas pulse for 1 s, and an Ar purge gas pulse for 0.4 s.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time segment | Ga source | Ar purge (1) | O₂ plasma | Ar purge (2) |\\n|-------------|-----------|--------------|-----------|--------------|\\n| t₁ | ON | OFF | OFF | OFF |\\n| t₂ | OFF | ON | OFF | OFF |\\n| t₃ | OFF | OFF | ON | OFF |\\n| t₄ | OFF | ON | OFF | OFF |\\n| t₅ | ON | OFF | OFF | OFF |\\n| t₆ | OFF | ON | OFF | OFF |\\n| t₇ | OFF | OFF | ON | OFF |\\n| t₈ | OFF | ON | OFF | OFF |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1) Metal precursor pulse 0.1 s - [(CH₃)₂GaNH₂]₃ vapor in Ar. → 2) Purge 2.0 s - Ar purge.→ 3) 1.0 s - O₂ plasma pulse → 4) 0.4 s - Ar purge.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thermal ALD: Uses a thermal oxidant (O₃) in step 3 to form the metal-oxide layer. PE-ALD: Uses a plasma oxidant (O₂ plasma) in step 3 to form the metal-oxide layer. Both cycles retain the same fundamental sequence of precursor pulse, purge, reactant pulse, and purge.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film shifts from being formed via a slower, thermally activated oxidation reaction to a more energetic, plasma-activated process. This introduces highly reactive oxygen radicals (O⁺) that create a denser Ga–O network with fewer carbon/hydrogen impurities from incomplete ligand removal. The result is a film with superior stoichiometry, higher density, and potentially a different defect profile compared to thermal ALD.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To achieve a higher-quality, denser Ga₂O₃ dielectric at a lower substrate temperature. The O₂ plasma provides more aggressive oxidation, leading to films with:\\nLower impurity content (reduced C/H).\\n\\nHigher dielectric breakdown strength.\\n\\nBetter performance in high-field, high-temperature device operation.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":3,"width":471,"height":313}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":478,"height":319,"image_format":"jpeg","image_sha256":"6d0b2b61596cbfe69f48b808e3768d1b464d83262209236e5757ebfe0af13d45","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG1.jpg","caption":"FIG. 1. Schematic of the standard recipe of one cycle of the PA-ALD process of NiO $_{\\text{Alanis}}$ at $150^{\\circ}\\text{C}$ .","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG1","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG1","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows one complete NiO ALD cycle represented as a time-sequenced process timing diagram. The Alanis precursor is pulsed briefly at the beginning of the cycle, followed by a purge to remove excess precursor and reaction by-products. An O₂ plasma step is then applied for a longer duration to oxidize the surface-bound species and form NiO. A final purge clears remaining reactive species before the next cycle begins. The diagram emphasizes the strictly sequential, non-overlapping nature of the ALD steps.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The timing diagram shows that the Alanis pulse precedes the O₂ plasma step, indicating a sequential process. This ordering ensures that the precursor exposure occurs first, followed by a separate plasma step rather than overlapping signals. The clear separation visible in the figure suggests that the two steps are intentionally isolated within the cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Separates the Alanis pulse from the O₂ plasma step\\n-Removes residual precursor signal before plasma activation\\n-Ensures non-overlapping process steps within the cycle\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The timing diagram shows that the O₂ plasma step spans a much longer time interval than the Alanis pulse. This indicates that the plasma exposure is designed to occupy a larger fraction of the cycle. In contrast, the precursor pulse is brief and confined to the early part of the sequence.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The diagram shows that each step occurs in a fixed order without temporal overlap. This consistent sequencing suggests that the same surface state is re-established at the start of each cycle. Such repeatable timing is consistent with controlled and reproducible ALD operation as implied by the diagram structure.\"}]}]","bbox":[{"panel_id":"a","x":9,"y":10,"width":667,"height":468}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":678,"height":477,"image_format":"jpeg","image_sha256":"eeb61d9d9f85262d72b0888d3f0e451fe2e9e473194956eab4c571fa59de96ce","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig4.jpg","caption":"Fig.4 Schatic f th A process us in this work. Half-cycle A consts of Hfac dose/old steps, which are reeated 15 times per cycle (unles stated otherwise). Half-cycle B is the $\\mathsf{H}_{2}$ plasma at a pressure of 300 mTorr and 600 W power. Each half-cycle is followed by a 10 s Ar purge with the APC fully open for maximum pumping efficiency.","id":"validation/atomic-layer-etching/experimental-usecase/10/fig4","sample_id":"atomic-layer-etching/experimental-usecase/10/fig4","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1123,"height":453}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":1123,"height":453,"image_format":"jpeg","image_sha256":"bfc931e0010a5d40bd97cb12ac65090e9eb9ecdfcce65132b2de42bc2af56595","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_15_fig_10.jpg","caption":"FIG. 10. Comparison of etching with (a) continuous and simultaneous delivery of plasma species, (b) pulsed substrate bias pulsing to modulate ion energy, while keeping neutral delivery is fixed, and (c) ALE with fully separation of neutrals and ions, using gas cycling to also modulate the plasma neutrals. In this schematic, neutrals represent reaction A and ion energy represents reaction B.","id":"validation/atomic-layer-etching/experimental-usecase/15/fig_10","sample_id":"atomic-layer-etching/experimental-usecase/15/fig_10","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"process timing diagram"},{"panel_id":"c","label":"process timing diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"c","x":2,"y":548,"width":469,"height":282},{"panel_id":"b","x":2,"y":221,"width":465,"height":303},{"panel_id":"a","x":5,"y":0,"width":460,"height":213}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":470,"height":834,"image_format":"jpeg","image_sha256":"215874b2aa8dc2201a5f14346f2981c95557c56da3726c2715f40ac628733741","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_15_fig_4.jpg","caption":"FiG. 4. Total amount of material removed in three sequential ALE cycles: $\\mathrm{A}\\rightarrow \\mathrm{B}\\rightarrow \\mathrm{A}\\rightarrow \\mathrm{B}\\rightarrow \\mathrm{A}\\rightarrow \\mathrm{B}$ The amount of material etched per cycle is EPC. Ideally, removal only occurs during reaction B and is selflimiting. The time needed to switch between reactions is indicated by gray zones.","id":"validation/atomic-layer-etching/experimental-usecase/15/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/15/fig_4","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":0,"width":550,"height":433}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":555,"height":433,"image_format":"jpeg","image_sha256":"f8b31b6c272bb99b59aa80e11d04e382fa8abbe3f0980ea7696214179baa2069","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_5_figure_1.jpg","caption":"Figure 1. (a) The process steps in the ALE cycle for InGaAs etching. (b) Schematic diagram of ICP ion beam source with three-grid assembly used to etch InGaAs by ALE.","id":"validation/atomic-layer-etching/experimental-usecase/5/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/5/figure_1","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":1,"y":452,"width":632,"height":615},{"panel_id":"a","x":4,"y":2,"width":637,"height":445}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/Atomic layer etching of InGaAs by controlled ion beam.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":639,"height":1073,"image_format":"jpeg","image_sha256":"625f966b76cbd3cb6619fd648d7aeae3a265207063cfe7ca7d66173cef01958e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_22_fig_10.jpg","caption":"FIG. 10. Comparison of etching with (a) continuous and simultaneous delivery of plasma species, (b) pulsed substrate bias pulsing to modulate ion energy, while keeping neutral delivery is fixed, and (c) ALE with fully separation of neutrals and ions, using gas cycling to also modulate the plasma neutrals. In this schematic, neutrals represent reaction A and ion energy represents reaction B.","id":"validation/atomic-layer-etching/simulation-usecase/22/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/22/fig_10","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"process timing diagram"},{"panel_id":"c","label":"process timing diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"c","x":1,"y":546,"width":462,"height":282},{"panel_id":"b","x":6,"y":219,"width":459,"height":316},{"panel_id":"a","x":1,"y":1,"width":461,"height":203}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/Review Paper -- Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":470,"height":834,"image_format":"jpeg","image_sha256":"215874b2aa8dc2201a5f14346f2981c95557c56da3726c2715f40ac628733741","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_22_fig_4.jpg","caption":"FiG. 4. Total amount of material removed in three sequential ALE cycles: $\\mathrm{A}\\rightarrow \\mathrm{B}\\rightarrow \\mathrm{A}\\rightarrow \\mathrm{B}\\rightarrow \\mathrm{A}\\rightarrow \\mathrm{B}$ The amount of material etched per cycle is EPC. Ideally, removal only occurs during reaction B and is selflimiting. The time needed to switch between reactions is indicated by gray zones.","id":"validation/atomic-layer-etching/simulation-usecase/22/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/22/fig_4","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":3,"width":551,"height":428}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/Review Paper -- Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":555,"height":433,"image_format":"jpeg","image_sha256":"f8b31b6c272bb99b59aa80e11d04e382fa8abbe3f0980ea7696214179baa2069","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/reaction-energy-profile-diagram/test/metadata.jsonl b/subsets/reaction-energy-profile-diagram/test/metadata.jsonl index 5812e7515fbbfb44bfb85b6bf6bb105ab833a2bd..392a636a35880ca99db551a1a1653f8f7a1b454a 100644 --- a/subsets/reaction-energy-profile-diagram/test/metadata.jsonl +++ b/subsets/reaction-energy-profile-diagram/test/metadata.jsonl @@ -1,20 +1,20 @@ -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_e6eb42b61a9a425fd89fcaed18cf0d52d43111bb10eeb9c946ace0365ef01ef9.jpg","caption":"Reaction CoordinatesFigure 11. ZPE-corrected PES for the two consecutive hydroxylation reactions on the surface $-\\mathrm{TiI}_3$ intermediate. The two hydroxylation reactions are denoted by different colors: $\\mathrm{RC} =$ reactant complex; $\\mathrm{TS} =$ transition state; $\\mathrm{PC} =$ product complex.","id":"test/atomic-layer-deposition/simulation-usecase/1/e6eb42b61a9a425fd89fcaed18cf0d52d43111bb10eeb9c946ace0365ef01ef9","sample_id":"atomic-layer-deposition/simulation-usecase/1/e6eb42b61a9a425fd89fcaed18cf0d52d43111bb10eeb9c946ace0365ef01ef9","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/e6eb42b61a9a425fd89fcaed18cf0d52d43111bb10eeb9c946ace0365ef01ef9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/e6eb42b61a9a425fd89fcaed18cf0d52d43111bb10eeb9c946ace0365ef01ef9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":936,"height":783,"image_format":"jpeg","image_sha256":"c156af91556158eaf4c183f5edcc752114d5429638b96d6cd65e3099143e5e27","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":936,"height":783}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the ZPE-corrected potential energy surface (PES) for the two consecutive hydroxylation reactions on the surface −TiI2 intermediate. Each reaction is represented by its reactant complex (RC), transition state (TS), and product complex (PC), with the relative energies (in kcal/mol) indicated. The first and second hydroxylation reactions have nearly identical activation barriers (22.2 and 22.4 kcal/mol), and the overall 0 K reaction enthalpy for completing both exchanges is 2.6 kcal/mol.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Reaction Step|Relative Energy (kcal/mol)|\\n|-------------|---------------------------|\\n|RC1 + H₂O|0.0|\\n|TS1|22.2|\\n|PC1|0.0|\\n|RC2 + H₂O|0.0|\\n|TS2|22.4|\\n|PC2|2.6|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first and second reactions have almost identical activation barriers: 22.2 kcal/mol for the first and 22.4 kcal/mol for the second.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The rate constants for reaction E are approximately one order of magnitude smaller than those for the (SiH3O)3Si−O−TiI3* + H2O reaction. This is due to the slightly higher activation barrier in reaction E and the larger rotational partition function of the adsorbed H2O, which arises from a larger effective moment of inertia. The restricted rotation of H2O reduces the rate constant, and the overall kinetics reflect the combination of these energy and entropic effects.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"RC: Adsorbed H₂O on −TiI₂, forming a Lewis acid/base interaction with Ti, TS: Partial breaking of Ti−I and H−O bonds, formation of partial H−I bond, PC: Formation of −Ti(OH)I group after HI liberation\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_13.jpg","caption":"Figure 13. ZPE-corrected PES for the reaction of $\\mathrm{TiI_4}$ with surface iodine species: (a) adsorption equilibrium state, (b) first transition state, (c) reaction intermediate, and (d) second transition state. Distances are shown in angstroms.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_13","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_13","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_13.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1208,"height":1311,"image_format":"jpeg","image_sha256":"9b958392c6abc1289b7a45461c070acade4c99cb7f54960e187714d107e1730b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":326,"width":1202,"height":980},{"panel_id":"b","x":2,"y":15,"width":388,"height":315},{"panel_id":"c","x":401,"y":17,"width":405,"height":307},{"panel_id":"d","x":813,"y":15,"width":393,"height":315}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"ZPE-corrected potential energy surface (PES) for the reaction of H₂O with surface iodine species, showing the energy profile along the reaction coordinates including the initial adsorption, a metastable intermediate, and the final product (relative energies 0 to −13.0 kcal/mol).\"},{\"panel_id\":\"b\",\"text\":\"Molecular structure of the adsorption state, highlighting key bond lengths such as Ti−O1, H−O2, and Si−O distances.\"},{\"panel_id\":\"c\",\"text\":\"Molecular structure of the metastable intermediate, showing important bond distances and geometrical changes along the reaction path.\"},{\"panel_id\":\"d\",\"text\":\"Molecular structure of the final product, illustrating the optimized bond lengths and geometry after reaction completion.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Reaction Coordinates|Relative Energy (kcal/mol)|\\n|--------------------|--------------------------|\\n|H₂O + (HO)₂SiO(OH)₂|0.0|\\n|Adsorbed H₂O on Ti−O1/H−O2|-5.8|\\n|Metastable Intermediate (M)|8.5|\\n|Product (HI + SiO2)|-13.0|\"},{\"panel_id\":\"b\",\"text\":\"|Atom|Bond Length (Å)|\\n|----|---------------|\\n|Ti|O1: 2.26|\\n|H|O2: 1.90|\"},{\"panel_id\":\"c\",\"text\":\"|Atom|Bond Length (Å)|\\n|----|---------------|\\n|Si|O: 1.85|\\n|H|O: 1.90|\"},{\"panel_id\":\"d\",\"text\":\"|Atom|Bond Length (Å)|\\n|----|---------------|\\n|Si|O: 1.64|\\n|H|O: 1.90|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The metastable intermediate is 8.5 kcal/mol higher in energy than the separated reactants.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The overall rate constants for the reaction with surface iodine attached to Si are approximately four orders of magnitude larger than for −TiI3. This indicates that the Si-bound iodine is significantly more reactive toward H₂O, suggesting that in ALD processes, reactions at Si sites will dominate, leading to more efficient conversion of surface iodine to hydroxylated species.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Panel b (adsorption state): Ti−O1 = 2.26 Å, H−O2 = 1.90 Å; indicates H₂O coordination to the surface, Panel c (intermediate): Si−O = 1.85 Å; shows partial formation of Si−O bond and cluster distortion, Panel d (product): Si−O = 1.64 Å; represents fully formed product with HI release\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_16.jpg","caption":"Figure 16. ZPE-corrected PES for the $\\mathrm{(SiH_3O)_3Si - OH^* + Ti_4}$ and $\\mathrm{(SiH_3O)_3Si - OH^* + TiCl_4}$ reactions. $\\mathrm{IR} =$ isolated reactants; $\\mathrm{RC} =$ reactant-like adsorption complex; $\\mathrm{TS} =$ transition state; $\\mathrm{PC} =$ product-like adsorption complex; $\\mathrm{IP} =$ isolated products.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_16","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_16","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_16.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":844,"height":772,"image_format":"jpeg","image_sha256":"d597faf42b1afb4e13f42ec8f77efaae58e2dabf361d57cd5962381ddf605ff5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":844,"height":772}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the ZPE-corrected potential energy surfaces (PES) for the reactions of (SiH3O)3Si−OH* with TiI4 and TiCl4. The energy profiles include isolated reactants (IR), reactant-like adsorption complexes (RC), transition states (TS), product-like adsorption complexes (PC), and isolated products (IP). The RC structure for TiCl4 is more stable than for TiI4 due to stronger Lewis acid/base interactions, while the TS energies are similar. The PC and IP energies show that the TiI4 reaction is slightly more exothermic than the TiCl4 reaction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Reaction Coordinates|Relative Energy (kcal/mol) TiI4|Relative Energy (kcal/mol) TiCl4|\\n|--------------------|--------------------------------|---------------------------------|\\n|IR|0.0|0.0|\\n|RC|-5.7|-10.2|\\n|TS|7.8|7.7|\\n|PC|-10.0|-6.5|\\n|IP|-9.4|-6.5|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Both reactions proceed via adsorption to the surface −OH group, formation of a reactant-like complex (RC), transition state (TS), and product-like complex (PC).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiCl4. Its 0 K heat of adsorption is 10.2 kcal/mol, compared to 5.7 kcal/mol for TiI4, due to stronger Lewis acid/base interactions.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The stronger electron-withdrawing Cl ligands in TiCl4 enhance Lewis acid/base interactions, stabilizing both the adsorption complex and transition state, which lowers the potential energy of the PES compared to TiI4. Despite these differences in adsorption strength, the activation barriers for the two reactions are nearly identical (13.5 kcal/mol for TiI4 vs. 13.7 kcal/mol for TiCl4), indicating similar reaction rates. The TiI4 reaction is slightly more exothermic, but the bond energies of Ti−I and Ti−Cl do not directly determine the kinetics; instead, the energetics of the transition states govern the reaction rates.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"IR: Isolated reactants, RC: Reactant-like adsorption complex, TS: Transition state, PC: Product-like adsorption complex, IP: Isolated products\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_7.jpg","caption":"Figure 7. ZPE-corrected PES for the three consecutive hydroxylation reactions on the surface $-\\mathrm{TiI}_3$ intermediate. The three hydroxylation reactions are denoted by different colors: $\\mathrm{RC} =$ reactant complex; $\\mathrm{TS} =$ transition state; $\\mathrm{PC} =$ product complex.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_7","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":956,"height":825,"image_format":"jpeg","image_sha256":"5cb198873dcb61110155ba0b6394ecb6d80dd88cf7016251de9bd52076bf659e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":956,"height":825}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a ZPE-corrected potential energy surface for three consecutive hydroxylation reactions occurring on a surface −TiI₃ intermediate. For each hydroxylation step, the energies of the reactant complex (RC), transition state (TS), and product complex (PC) are shown along the reaction coordinate. Different colors distinguish the three sequential reactions, allowing comparison of activation barriers and reaction energetics across the hydroxylation sequence.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Hydroxylation Step|State|Description|Relative Energy (kcal/mol, ZPE-corrected)|\\n|------------------|-----|-----------|-----------------------------------------|\\n|1st hydroxylation|RC1|−TiI₃ + H₂O (reactant complex)|−6.2|\\n||TS1|Transition state|20.3|\\n||PC1|−Ti(OH)I₂ + HI (product complex)|−0.2|\\n|2nd hydroxylation|RC2|−Ti(OH)I₂ + H₂O|−7.5|\\n||TS2|Transition state|17.7|\\n||PC2|−Ti(OH)₂I + HI|3.2|\\n|3rd hydroxylation|RC3|−Ti(OH)₂I + H₂O|−8.8|\\n||TS3|Transition state|19.4|\\n||PC3|−Ti(OH)₃ + HI|1.5|\\n|Overall reaction|—|−TiI₃ → −Ti(OH)₃ + 3HI|4.5|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Three consecutive hydroxylation reactions.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ZPE-corrected PES provides insight into both the kinetics and thermodynamics of the sequential hydroxylation reactions on the −TiI₃ surface intermediate. By explicitly showing activation barriers and relative stabilities of reactant, transition, and product complexes, the figure allows evaluation of which hydroxylation steps are rate-limiting and how the surface chemistry evolves as iodine ligands are progressively replaced by hydroxyl groups. This information is essential for predicting reaction feasibility and temperature dependence in ALD processes, where controlled surface reactions determine film quality and growth efficiency.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Energy of the reactant complex (RC), Energy of the transition state (TS), Energy of the product complex (PC)\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_14_fig_1.jpg","caption":"Fig. 1. Precursor dimerization, including H transfer from OH bridges. Black curve is 1st H transfer, blue curve is 2nd H transfer with HCl, physisorbed and red curve is 2nd H transfer without HCl physisorbed. Hf is yellow balls, Chlorine green balls, oxygen red balls and hydrogen white balls.","id":"test/atomic-layer-deposition/simulation-usecase/14/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/14/fig_1","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/14/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/14/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/14/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/14/C. Mastail et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":525,"height":847,"image_format":"jpeg","image_sha256":"1e7161328cf33089f9293beed1ef35ebcc3ea33e3c52b9b55bdd7d973b6f94e2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":519,"height":422},{"panel_id":"b","x":2,"y":436,"width":519,"height":408}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_16_figure_10.jpg","caption":"Figure 10. Energetics of the $\\beta$ -hydride-elimination pathway of the self-limiting surface reaction between $\\mathrm{Hf(OEt)_4}$ and the Hf-OEt surface termination group.a $\\Delta G$ 750 Kb $\\Delta G$ 600 Kc $\\Delta G$ 450 Kd $\\Delta G$ 300 Kand e $\\Delta E$ 0 K","id":"test/atomic-layer-deposition/simulation-usecase/16/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/16/figure_10","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/Collin Mui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1172,"height":1050,"image_format":"jpeg","image_sha256":"adf80b9ed0f046e95c5efb6b232865d6cb699bf527309a7ff0da197960c8013a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1172,"height":1050}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_16_figure_2.jpg","caption":"Figure 2. Energetics of the hydrogen-transfer pathway for the metal half-reaction with $\\mathrm{Hf(OEt)_4}$ as the metal precursor. (a) $\\Delta G$ (750 K), (b) $\\Delta G$ (600 K), (c) $\\Delta G$ (450 K), (d) $\\Delta G$ (300 K), and (e) $\\Delta E$ (0 K).","id":"test/atomic-layer-deposition/simulation-usecase/16/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/16/figure_2","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/Collin Mui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1184,"height":1045,"image_format":"jpeg","image_sha256":"7ac1a99c65a436a44a0d65d3ad2697e98df91871b3c67261460f6620d71d9f17","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1184,"height":1045}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_16_figure_3.jpg","caption":"Figure 3. Energetics of the ethyl group-transfer pathway for the metal half-reaction with $\\mathrm{Hf(OEt)_4}$ as the metal precursor. (a) $\\Delta G$ (750 K), (b) $\\Delta G$ (600 K), (c) $\\Delta G$ (450 K), (d) $\\Delta G$ (300 K), and (e) $\\Delta E$ (0 K).","id":"test/atomic-layer-deposition/simulation-usecase/16/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/16/figure_3","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/Collin Mui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1169,"height":1053,"image_format":"jpeg","image_sha256":"ef05fcb93d7851c4d013aa01bd9f3c904690f1cc188baecf97c9c3780cc8a5b4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1169,"height":1053}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_16_figure_4.jpg","caption":"Figure 4. Energetics of the $\\beta$ -hydride-elimination pathway for the metal half-reaction with $\\mathrm{Hf(OEt)_4}$ as the metal precursor. (a) $\\Delta G$ 750 K), (b) $\\Delta G$ 600 K),c $\\Delta G$ 450 K)d $\\Delta G$ 300 Kand e $\\Delta E$ 0K.","id":"test/atomic-layer-deposition/simulation-usecase/16/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/16/figure_4","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/Collin Mui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1169,"height":1039,"image_format":"jpeg","image_sha256":"e62f5fbe8da20d7d79e5506165cc955cb969245abc8ce1d78aebd98b639f31a7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1169,"height":1039}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_16_figure_5.jpg","caption":"Figure 5. Energetics of the hydrogen-transfer pathway for the oxygen half-reaction with $\\mathrm{Hf(OEt)_4}$ as the metal precursor. (a) $\\Delta G$ (750 K), (b) $\\Delta G$ (600 K), (c) $\\Delta G$ (450 K), (d) $\\Delta G$ (300 K), and (e) $\\Delta E$ (0 K).","id":"test/atomic-layer-deposition/simulation-usecase/16/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/16/figure_5","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/Collin Mui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1069,"height":1008,"image_format":"jpeg","image_sha256":"c46ffdd9bf8ffcbc88b49f2116ffe4d525d90a8d124f7552f8e3af05add05bc0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1069,"height":1008}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_16_figure_6.jpg","caption":"Figure 6. Energetics of the ethyl group-transfer pathway for the incomplete metal half-reaction with $\\mathrm{Hf(OEt)_4}$ as the metal precursor. (a) $\\Delta G$ (750 K), (b) $\\Delta G$ (600 K), (c) $\\Delta G$ (450 K), (d) $\\Delta G$ (300 K), and (e) $\\Delta E$ (0 K).","id":"test/atomic-layer-deposition/simulation-usecase/16/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/16/figure_6","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/Collin Mui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1158,"height":1036,"image_format":"jpeg","image_sha256":"ee4a09872e168f70becd06b88f3a86dfe0b2323915a22e7544464181b2b710d1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1158,"height":1036}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_16_figure_7.jpg","caption":"Figure 7. Energetics of the $\\beta$ -hydride-elimination pathway for the incomplete metal half-reaction with $\\mathrm{Hf(OEt)_4}$ as the metal precursor. (a) $\\Delta G$ $(750~\\mathrm{K})$ b $\\Delta G$ $(600~\\mathrm{K})$ c $\\Delta G$ $(450~\\mathrm{K})$ d $\\Delta G$ $(300~\\mathrm{K})$ and (e) $\\Delta E$ $(0\\mathrm{K})$","id":"test/atomic-layer-deposition/simulation-usecase/16/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/16/figure_7","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/Collin Mui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1159,"height":1058,"image_format":"jpeg","image_sha256":"19227bac620b9c966c463a05617920327674b569cd14f6185d71d331a072d024","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1159,"height":1058}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_16_figure_8.jpg","caption":"Figure 8. Energetics of the nongrowth ligand-exchange surface reaction between $\\mathrm{Hf(OEt)_4}$ and the $\\mathrm{Hf - OEt^{*}}$ surface site. (a) $\\Delta G$ (750 K), (b) $\\Delta G$ (600 K), (c) $\\Delta G$ (450 K), (d) $\\Delta G$ (300 K), and (e) $\\Delta E$ (0 K).","id":"test/atomic-layer-deposition/simulation-usecase/16/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/16/figure_8","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/Collin Mui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1041,"height":1078,"image_format":"jpeg","image_sha256":"1b4c31ac7a6456a653e9a7dc2e171df3e3361115fc97760409568e0c9ca51233","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1041,"height":1078}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_16_figure_9.jpg","caption":"Figure 9. Energetics of the ethyl group-transfer pathway of the self-limiting surface reaction between $\\mathrm{Hf(OEt)_4}$ and the $\\mathrm{Hf - OEt^*}$ surface termination group. (a) $\\Delta G$ $(750~\\mathrm{K})$ b $\\Delta G$ $(600~\\mathrm{K})$ c $\\Delta G$ $(450~\\mathrm{K})$ d $\\Delta G$ $(300~\\mathrm{K})$ and (e) $\\Delta E$ $(0\\mathrm{K})$","id":"test/atomic-layer-deposition/simulation-usecase/16/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/16/figure_9","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/Collin Mui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1172,"height":1058,"image_format":"jpeg","image_sha256":"85b7394baf6b7be111a3c7b932668efad38e0d0226e738af46563c7748800c8e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1172,"height":1058}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_41_fig_3.jpg","caption":"Fig. 3 Energy profile of the dissociation processes of $\\mathrm{Cu(acac)_2}$ on the $\\mathrm{Cu(110)}$ surface.","id":"test/atomic-layer-deposition/simulation-usecase/41/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/41/fig_3","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/Xiao Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":658,"height":344,"image_format":"jpeg","image_sha256":"69b45fe615e01f6c814d00abc74153e0dc87d28733da1e261f278ac002fb8f82","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":655,"height":342}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the energy changes at various points in a reaction pathway using two different computational methods: GGA-PBE and vdW-DF.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | GGA-PBE Energy (eV) | vdW-DF Energy (eV) |\\n|---|---|---|\\n| Cu(acac)₂(g) | 0.00 | 0.00 |\\n| Cu(acac)₂@T | -0.48 | -1.42 |\\n| Cu(acac)₂@H | -1.51 | -2.16 |\\n| TS1 | -0.92 | -1.68 |\\n| Cu(acac)* + acac* | -1.88 | -2.29 |\\n| TS2 | -1.32 | -1.79 |\\n| Cu* + 2acac* | -2.10 | -2.61 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Red corresponds to vdW DF.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TS1 is the transition state for dissociation of one acac ligand from adsorbed Cu(acac)2.\\n\\nThe barrier is 0.59 eV for PBE and 0.48 eV for vdW DF.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"PBE gives 2.10 eV exothermicity for the full process.\\n\\nvdW DF gives 2.61 eV exothermicity for the full process\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The paper notes that GGA PBE does not capture van der Waals forces, which can lead to underestimated binding for weakly bound adsorption states. Using vdW DF increases the adsorption energies and can shift how strongly the ligands interact with the surface. For ALD interpretation, this affects predicted sticking, surface diffusion into the most stable site, and the thermodynamic driving force for the first ligand loss step.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_46_fig_3.jpg","caption":"Fig. 3. Energy variations for the (a) BDMAS and (b) TeDMAS reaction with $-\\mathrm{OH}$ on the surface. The unit values are shown in Å.","id":"test/atomic-layer-deposition/simulation-usecase/46/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/46/fig_3","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/Yong-Chan Jeong et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":1211,"height":495,"image_format":"jpeg","image_sha256":"9a8aca511b216276b0b43d9d835d186ed80c3a7c244ce87bd8310c7a3c9ab518","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":7,"width":580,"height":484},{"panel_id":"b","x":633,"y":4,"width":570,"height":487}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Calculated reaction energy profile for the surface reaction of BDMAS with a hydroxyl group on the Si(001) surface, showing adsorption, transition, and reaction states with a low reaction barrier that indicates kinetically favorable ligand elimination.\"},{\"panel_id\":\"b\",\"text\":\"Calculated reaction energy profile for the surface reaction of TeDMAS with surface –OH groups on Si(001), showing strong adsorption but a high reaction barrier consistent with steric hindrance and kinetically unfavorable surface reactions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| State | Energy (eV) |\\n|---|---|\\n| Adsorption state | 0.69 |\\n| Transition state | 1.10 |\\n| Reaction state | 1.49 |\\n| Adsorption state | 2.53 |\\n| Transition state | 1.90 |\\n| Reaction state | 1.49 |\\n| Adsorption state | 0.28 |\\n| Reaction state | -1.69 |\"},{\"panel_id\":\"b\",\"text\":\"| State | Energy (eV) |\\n|---|---|\\n| Adsorption state | 0.84 |\\n| Transition state | 1.03 |\\n| Reaction state | 1.83 |\\n| Adsorption state | 2.23 |\\n| Transition state | 2.02 |\\n| Reaction state | 1.81 |\\n| Adsorption state | 1.67 |\\n| Reaction state | -1.69 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure demonstrates that although both precursors adsorb on the hydroxylated silicon surface, only BDMAS undergoes a kinetically favorable surface reaction due to its low energy barrier. In contrast, the high barrier observed for TeDMAS indicates strong steric constraints that hinder ligand elimination, making it unsuitable for efficient ALD despite strong adsorption.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"BDMAS exhibits a low reaction barrier of 0.28 eV, whereas TeDMAS shows a much higher barrier of 1.81 eV.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Number of DMA ligands bonded to the Si center, Degree of steric hindrance around the reactive Si atom, Extent of bond distortion at the transition state, Distance between N(DMA) and H–OH during proton transfer\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_51_fig_4.jpg","caption":"Fig. 4 Calculated energy diagram of $\\mathsf{H}_{2}$ and $\\mathsf{N}_2$ decomposition on the TiN (001), the Ti-terminated TiN (111), and N-terminated TiN (111) surface.","id":"test/atomic-layer-deposition/simulation-usecase/51/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/51/fig_4","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":661,"height":428,"image_format":"jpeg","image_sha256":"80f0249ed7e20e433c676b023fcfa3c8fdd2f4c9f7ad06dea4fa9e2717f12c74","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":661,"height":428}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents calculated energy diagrams for H₂ and N₂ decomposition on TiN surfaces (TiN (001), Ti-terminated TiN (111), and N-terminated TiN (111)), showing activation energies and reaction energies. H₂ dissociation is most facile on the N-terminated TiN (111) surface, while N₂ dissociation occurs only on the Ti-terminated TiN (111). The comparison highlights surface-dependent reactivity, with distinct activation barriers and reaction energies across the three TiN surfaces.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Figure | Energy (eV) |\\n| --- | --- |\\n| TiN (001) | E_a = 4.92, E_s = 1.68, 3.25, 1.00, -0.04, 0.01 |\\n| N-terminated TiN (111) | E_a = 1.45, E_s = 0.26, 1.23, -0.01, -0.01, -4.67 |\\n| Ti-terminated TiN (111) | E_a = 0.11, E_s = 0.92, -2.60, -3.44, -5.50 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"TiN (001): H₂ Ea = 4.92 eV; N₂ Ea = 4.92 eV; reaction energies Es = 1.68, 3.25, 1.00, -0.04, 0.01 eV, Ti-terminated TiN (111): H₂ Ea = 0.11 eV; N₂ Ea = 0.92 eV; reaction energies Es = -2.60, -3.44, -5.50 eV, N-terminated TiN (111): H₂ Ea = 0.26 eV; N₂ Ea = 1.45 eV; reaction energies Es = 1.23, -0.01, -0.01, -4.67 eV\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Ti-terminated TiN (111) surface strongly binds N atoms, allowing N₂ dissociation with a moderate activation energy. The N-terminated TiN (111) surface, in contrast, has a very high binding energy for H atoms, facilitating H₂ dissociation with a low activation barrier, but does not stabilize N atoms sufficiently, so N₂ remains undissociated. These differences highlight how surface termination controls molecular dissociation and energetics, influencing catalytic and surface reaction performance.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The N-terminated TiN (111) surface shows the lowest activation energy for H₂ dissociation (0.26 eV).\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_51_fig_8.jpg","caption":"Fig. 8 Calculated energy diagram of $\\mathsf{B}_2\\mathsf{H}_6$ decomposition on the H-covered N-terminated TiN (111) surface.","id":"test/atomic-layer-deposition/simulation-usecase/51/fig_8","sample_id":"atomic-layer-deposition/simulation-usecase/51/fig_8","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":1203,"height":761,"image_format":"jpeg","image_sha256":"385af47d01f3dcb925320cc08cd4b875b6e0719c0eb32bcf9d9c7eecd8d4f503","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1203,"height":761}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the calculated energy diagram for the stepwise decomposition of B₂H₆ on the H-covered N-terminated TiN (111) surface. Each step is labeled with the corresponding activation or reaction energy, illustrating how the B–H and B–B bonds break sequentially. The diagram highlights which steps are energetically favorable (exothermic) and which are uphill, indicating the limited extent of decomposition due to surface passivation by hydrogen.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | Energy (eV) | Description |\\n|---|---|---|\\n| 1st B-H dissociation | 0.87 | First H atom of B2H6 reacts with surface H, desorbing H2; B2H5 remains adsorbed |\\n| 2nd B-H dissociation | 1.07 | H atom of B2H5 reacts with surface H, desorbing H2; further decomposition |\\n| B-B bond cleavage | 0.40 | B-B bond dissociation occurs on the surface |\\n| BH2* + BH2* formation | -0.05 | Intermediate species formed after partial dissociation |\\n| BH* + BH* formation | -0.36 | Further dissociation of BH2 species |\\n| B* + B* formation | 1.25 | Final dissociation step; remaining BH species difficult to break, endothermic |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The H-covered surface partially passivates the TiN surface, limiting the extent of B₂H₆ decomposition. While the first few steps are energetically favorable (exothermic), the later steps become endothermic and less likely to occur. This suggests that H coverage can control precursor reactivity, influencing the efficiency of subsequent ALD cycles and preventing full dissociation of B₂H₆ on the surface.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 2nd B–H dissociation step, with an activation energy of 1.07 eV.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The reaction occurs in several sequential steps, including B–H and B–B bond dissociations.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"B₂H₅ adsorbed after first H–H desorption, BH₂ + BH₂, BH* + BH, B + B***\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_12_figure_10.jpg","caption":"Figure 10. Pictorial representation of possible pathways in $\\mathrm{H}_2\\mathrm{O}$ formation and desorption. The horizontal dotted line connecting each minimum corresponds to the energy change relative to geometry G1, which is also $\\mathrm{M}_{\\mathrm{A}}^{2}$ in Figure 7.","id":"test/atomic-layer-etching/simulation-usecase/12/figure_10","sample_id":"atomic-layer-etching/simulation-usecase/12/figure_10","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":678,"height":611,"image_format":"jpeg","image_sha256":"1eef80e84e75522e01d087c55ead5bedfa6fbc210d6225f1eae449f63c7f044f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":2,"width":672,"height":604}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a DFT-derived conceptual energy landscape for H₂O formation and desorption, showing relative energies of surface geometries G1–G6. Atomic models illustrate representative configurations, while horizontal dashed lines indicate energy differences referenced to geometry G1. The pathway highlights a strongly endothermic final step associated with H₂O desorption.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 2.5 eV per desorbed H₂O molecule (from G1 → G6).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The desorption step is strongly endothermic because the pathway culminates in a large increase in relative energy, reaching approximately 2.5 eV. The figure indicates that separating an H₂O molecule from the surface corresponds to the highest-energy configuration, making this step thermodynamically unfavorable compared to earlier surface rearrangements.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The highest energetic cost occurs near geometry G6, where the relative energy reaches its maximum value. This configuration corresponds to the final stage of the pathway, associated with H₂O formation and separation from the surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_12_figure_3.jpg","caption":"Figure 3. Chart showing the geometries and binding energies of identified minima with respect to one HF adsorption at the $\\theta -\\mathrm{Al}_2\\mathrm{O}_3$ $(\\overline{2} 01)$ surface. Here, $\\mathrm{M}^0$ corresponds to the clean alumina surface. $\\mathrm{M}_{\\mathrm{A}}^{\\mathrm{I}}$ and $\\mathrm{M}_{\\mathrm{B}}^{\\mathrm{I}}$ denote molecularly and dissociatively adsorbed HF, respectively. $\\mathrm{M}_{\\mathrm{C}}^{\\mathrm{I}}$ and $\\mathrm{M}_{\\mathrm{D}}^{\\mathrm{I}}$ refer to the geometries in which the dissociated H atom hopped to an adjacent O atom in the same row and to an oxygen atom in the adjacent row, respectively. Activation energies where computed are shown in Figure 4.","id":"test/atomic-layer-etching/simulation-usecase/12/figure_3","sample_id":"atomic-layer-etching/simulation-usecase/12/figure_3","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":513,"height":400,"image_format":"jpeg","image_sha256":"451f33d404875c9310689aee2528deb7cdc7521a00f562bcca92605078b514a0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":8,"width":508,"height":393}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a DFT-derived energetic landscape for HF adsorption on the θ-Al₂O₃ ( 2̄01 ) surface, showing five representative configurations (M⁰, M₁ₐ, M₁ʙ, M₁c, M₁ᴅ). The clean surface (M⁰) is taken as the reference state, while molecular HF adsorption (M₁ₐ) is weakly stabilizing. Dissociative adsorption configurations are substantially more stable, with progressive hydrogen migration leading to lower energies. Among the identified minima, M₁ᴅ—where the dissociated hydrogen atom relocates to an oxygen atom in an adjacent row—is the most energetically favorable configuration.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| State | Description | Binding energy (eV) |\\n|---------|--------------------------------------------------|---------------------|\\n| M⁰ | Clean θ-Al₂O₃ (¯201) surface | 0.00 (reference) |\\n| M₁ₐ | Molecular (undissociated) HF adsorption | –0.44 |\\n| M₁ʙ | Dissociative adsorption (H–O, F–Al) | –1.74 |\\n| M₁c | Dissociated H hopped to adjacent O (same row) | –1.31 |\\n| M₁ᴅ | Dissociated H hopped to O in adjacent row | –2.11 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The most energetically stable configuration shown is M₁ᴅ, with a binding energy of –2.11 eV. In this state, HF has dissociated and the hydrogen atom has relocated to an oxygen site in an adjacent surface row. The lower energy relative to other configurations indicates that this dissociative arrangement is thermodynamically favored among the states considered.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"• M₁ₐ (molecular adsorption): –0.44 eV \\n, • M₁c (dissociative, same-row H hop): –1.31 eV \\n, • M₁ʙ (dissociative adsorption): –1.74 eV \\n, • M₁ᴅ (dissociative, adjacent-row H hop): –2.11 eV\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The most favorable dissociative state (M₁ᴅ) is more stable than molecular adsorption (M₁ₐ) by approximately 1.67 eV.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_e6eb42b61a9a425fd89fcaed18cf0d52d43111bb10eeb9c946ace0365ef01ef9.jpg","caption":"Reaction CoordinatesFigure 11. ZPE-corrected PES for the two consecutive hydroxylation reactions on the surface $-\\mathrm{TiI}_3$ intermediate. The two hydroxylation reactions are denoted by different colors: $\\mathrm{RC} =$ reactant complex; $\\mathrm{TS} =$ transition state; $\\mathrm{PC} =$ product complex.","id":"test/atomic-layer-deposition/simulation-usecase/1/e6eb42b61a9a425fd89fcaed18cf0d52d43111bb10eeb9c946ace0365ef01ef9","sample_id":"atomic-layer-deposition/simulation-usecase/1/e6eb42b61a9a425fd89fcaed18cf0d52d43111bb10eeb9c946ace0365ef01ef9","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the ZPE-corrected potential energy surface (PES) for the two consecutive hydroxylation reactions on the surface −TiI2 intermediate. Each reaction is represented by its reactant complex (RC), transition state (TS), and product complex (PC), with the relative energies (in kcal/mol) indicated. The first and second hydroxylation reactions have nearly identical activation barriers (22.2 and 22.4 kcal/mol), and the overall 0 K reaction enthalpy for completing both exchanges is 2.6 kcal/mol.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Reaction Step|Relative Energy (kcal/mol)|\\n|-------------|---------------------------|\\n|RC1 + H₂O|0.0|\\n|TS1|22.2|\\n|PC1|0.0|\\n|RC2 + H₂O|0.0|\\n|TS2|22.4|\\n|PC2|2.6|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first and second reactions have almost identical activation barriers: 22.2 kcal/mol for the first and 22.4 kcal/mol for the second.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The rate constants for reaction E are approximately one order of magnitude smaller than those for the (SiH3O)3Si−O−TiI3* + H2O reaction. This is due to the slightly higher activation barrier in reaction E and the larger rotational partition function of the adsorbed H2O, which arises from a larger effective moment of inertia. The restricted rotation of H2O reduces the rate constant, and the overall kinetics reflect the combination of these energy and entropic effects.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"RC: Adsorbed H₂O on −TiI₂, forming a Lewis acid/base interaction with Ti, TS: Partial breaking of Ti−I and H−O bonds, formation of partial H−I bond, PC: Formation of −Ti(OH)I group after HI liberation\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":936,"height":783}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/e6eb42b61a9a425fd89fcaed18cf0d52d43111bb10eeb9c946ace0365ef01ef9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/e6eb42b61a9a425fd89fcaed18cf0d52d43111bb10eeb9c946ace0365ef01ef9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":936,"height":783,"image_format":"jpeg","image_sha256":"c156af91556158eaf4c183f5edcc752114d5429638b96d6cd65e3099143e5e27","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_13.jpg","caption":"Figure 13. ZPE-corrected PES for the reaction of $\\mathrm{TiI_4}$ with surface iodine species: (a) adsorption equilibrium state, (b) first transition state, (c) reaction intermediate, and (d) second transition state. Distances are shown in angstroms.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_13","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_13","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"ZPE-corrected potential energy surface (PES) for the reaction of H₂O with surface iodine species, showing the energy profile along the reaction coordinates including the initial adsorption, a metastable intermediate, and the final product (relative energies 0 to −13.0 kcal/mol).\"},{\"panel_id\":\"b\",\"text\":\"Molecular structure of the adsorption state, highlighting key bond lengths such as Ti−O1, H−O2, and Si−O distances.\"},{\"panel_id\":\"c\",\"text\":\"Molecular structure of the metastable intermediate, showing important bond distances and geometrical changes along the reaction path.\"},{\"panel_id\":\"d\",\"text\":\"Molecular structure of the final product, illustrating the optimized bond lengths and geometry after reaction completion.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Reaction Coordinates|Relative Energy (kcal/mol)|\\n|--------------------|--------------------------|\\n|H₂O + (HO)₂SiO(OH)₂|0.0|\\n|Adsorbed H₂O on Ti−O1/H−O2|-5.8|\\n|Metastable Intermediate (M)|8.5|\\n|Product (HI + SiO2)|-13.0|\"},{\"panel_id\":\"b\",\"text\":\"|Atom|Bond Length (Å)|\\n|----|---------------|\\n|Ti|O1: 2.26|\\n|H|O2: 1.90|\"},{\"panel_id\":\"c\",\"text\":\"|Atom|Bond Length (Å)|\\n|----|---------------|\\n|Si|O: 1.85|\\n|H|O: 1.90|\"},{\"panel_id\":\"d\",\"text\":\"|Atom|Bond Length (Å)|\\n|----|---------------|\\n|Si|O: 1.64|\\n|H|O: 1.90|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The metastable intermediate is 8.5 kcal/mol higher in energy than the separated reactants.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The overall rate constants for the reaction with surface iodine attached to Si are approximately four orders of magnitude larger than for −TiI3. This indicates that the Si-bound iodine is significantly more reactive toward H₂O, suggesting that in ALD processes, reactions at Si sites will dominate, leading to more efficient conversion of surface iodine to hydroxylated species.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Panel b (adsorption state): Ti−O1 = 2.26 Å, H−O2 = 1.90 Å; indicates H₂O coordination to the surface, Panel c (intermediate): Si−O = 1.85 Å; shows partial formation of Si−O bond and cluster distortion, Panel d (product): Si−O = 1.64 Å; represents fully formed product with HI release\"}]}]","bbox":[{"panel_id":"a","x":2,"y":326,"width":1202,"height":980},{"panel_id":"b","x":2,"y":15,"width":388,"height":315},{"panel_id":"c","x":401,"y":17,"width":405,"height":307},{"panel_id":"d","x":813,"y":15,"width":393,"height":315}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_13.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1208,"height":1311,"image_format":"jpeg","image_sha256":"9b958392c6abc1289b7a45461c070acade4c99cb7f54960e187714d107e1730b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_16.jpg","caption":"Figure 16. ZPE-corrected PES for the $\\mathrm{(SiH_3O)_3Si - OH^* + Ti_4}$ and $\\mathrm{(SiH_3O)_3Si - OH^* + TiCl_4}$ reactions. $\\mathrm{IR} =$ isolated reactants; $\\mathrm{RC} =$ reactant-like adsorption complex; $\\mathrm{TS} =$ transition state; $\\mathrm{PC} =$ product-like adsorption complex; $\\mathrm{IP} =$ isolated products.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_16","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_16","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the ZPE-corrected potential energy surfaces (PES) for the reactions of (SiH3O)3Si−OH* with TiI4 and TiCl4. The energy profiles include isolated reactants (IR), reactant-like adsorption complexes (RC), transition states (TS), product-like adsorption complexes (PC), and isolated products (IP). The RC structure for TiCl4 is more stable than for TiI4 due to stronger Lewis acid/base interactions, while the TS energies are similar. The PC and IP energies show that the TiI4 reaction is slightly more exothermic than the TiCl4 reaction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Reaction Coordinates|Relative Energy (kcal/mol) TiI4|Relative Energy (kcal/mol) TiCl4|\\n|--------------------|--------------------------------|---------------------------------|\\n|IR|0.0|0.0|\\n|RC|-5.7|-10.2|\\n|TS|7.8|7.7|\\n|PC|-10.0|-6.5|\\n|IP|-9.4|-6.5|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. Both reactions proceed via adsorption to the surface −OH group, formation of a reactant-like complex (RC), transition state (TS), and product-like complex (PC).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TiCl4. Its 0 K heat of adsorption is 10.2 kcal/mol, compared to 5.7 kcal/mol for TiI4, due to stronger Lewis acid/base interactions.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The stronger electron-withdrawing Cl ligands in TiCl4 enhance Lewis acid/base interactions, stabilizing both the adsorption complex and transition state, which lowers the potential energy of the PES compared to TiI4. Despite these differences in adsorption strength, the activation barriers for the two reactions are nearly identical (13.5 kcal/mol for TiI4 vs. 13.7 kcal/mol for TiCl4), indicating similar reaction rates. The TiI4 reaction is slightly more exothermic, but the bond energies of Ti−I and Ti−Cl do not directly determine the kinetics; instead, the energetics of the transition states govern the reaction rates.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"IR: Isolated reactants, RC: Reactant-like adsorption complex, TS: Transition state, PC: Product-like adsorption complex, IP: Isolated products\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":844,"height":772}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_16.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":844,"height":772,"image_format":"jpeg","image_sha256":"d597faf42b1afb4e13f42ec8f77efaae58e2dabf361d57cd5962381ddf605ff5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_7.jpg","caption":"Figure 7. ZPE-corrected PES for the three consecutive hydroxylation reactions on the surface $-\\mathrm{TiI}_3$ intermediate. The three hydroxylation reactions are denoted by different colors: $\\mathrm{RC} =$ reactant complex; $\\mathrm{TS} =$ transition state; $\\mathrm{PC} =$ product complex.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_7","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a ZPE-corrected potential energy surface for three consecutive hydroxylation reactions occurring on a surface −TiI₃ intermediate. For each hydroxylation step, the energies of the reactant complex (RC), transition state (TS), and product complex (PC) are shown along the reaction coordinate. Different colors distinguish the three sequential reactions, allowing comparison of activation barriers and reaction energetics across the hydroxylation sequence.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Hydroxylation Step|State|Description|Relative Energy (kcal/mol, ZPE-corrected)|\\n|------------------|-----|-----------|-----------------------------------------|\\n|1st hydroxylation|RC1|−TiI₃ + H₂O (reactant complex)|−6.2|\\n||TS1|Transition state|20.3|\\n||PC1|−Ti(OH)I₂ + HI (product complex)|−0.2|\\n|2nd hydroxylation|RC2|−Ti(OH)I₂ + H₂O|−7.5|\\n||TS2|Transition state|17.7|\\n||PC2|−Ti(OH)₂I + HI|3.2|\\n|3rd hydroxylation|RC3|−Ti(OH)₂I + H₂O|−8.8|\\n||TS3|Transition state|19.4|\\n||PC3|−Ti(OH)₃ + HI|1.5|\\n|Overall reaction|—|−TiI₃ → −Ti(OH)₃ + 3HI|4.5|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Three consecutive hydroxylation reactions.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ZPE-corrected PES provides insight into both the kinetics and thermodynamics of the sequential hydroxylation reactions on the −TiI₃ surface intermediate. By explicitly showing activation barriers and relative stabilities of reactant, transition, and product complexes, the figure allows evaluation of which hydroxylation steps are rate-limiting and how the surface chemistry evolves as iodine ligands are progressively replaced by hydroxyl groups. This information is essential for predicting reaction feasibility and temperature dependence in ALD processes, where controlled surface reactions determine film quality and growth efficiency.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Energy of the reactant complex (RC), Energy of the transition state (TS), Energy of the product complex (PC)\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":956,"height":825}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":956,"height":825,"image_format":"jpeg","image_sha256":"5cb198873dcb61110155ba0b6394ecb6d80dd88cf7016251de9bd52076bf659e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_14_fig_1.jpg","caption":"Fig. 1. Precursor dimerization, including H transfer from OH bridges. Black curve is 1st H transfer, blue curve is 2nd H transfer with HCl, physisorbed and red curve is 2nd H transfer without HCl physisorbed. Hf is yellow balls, Chlorine green balls, oxygen red balls and hydrogen white balls.","id":"test/atomic-layer-deposition/simulation-usecase/14/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/14/fig_1","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":1,"width":519,"height":422},{"panel_id":"b","x":2,"y":436,"width":519,"height":408}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/14/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/14/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/14/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/14/C. Mastail et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":525,"height":847,"image_format":"jpeg","image_sha256":"1e7161328cf33089f9293beed1ef35ebcc3ea33e3c52b9b55bdd7d973b6f94e2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_16_figure_10.jpg","caption":"Figure 10. Energetics of the $\\beta$ -hydride-elimination pathway of the self-limiting surface reaction between $\\mathrm{Hf(OEt)_4}$ and the Hf-OEt surface termination group.a $\\Delta G$ 750 Kb $\\Delta G$ 600 Kc $\\Delta G$ 450 Kd $\\Delta G$ 300 Kand e $\\Delta E$ 0 K","id":"test/atomic-layer-deposition/simulation-usecase/16/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/16/figure_10","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1172,"height":1050}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/Collin Mui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1172,"height":1050,"image_format":"jpeg","image_sha256":"adf80b9ed0f046e95c5efb6b232865d6cb699bf527309a7ff0da197960c8013a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_16_figure_2.jpg","caption":"Figure 2. Energetics of the hydrogen-transfer pathway for the metal half-reaction with $\\mathrm{Hf(OEt)_4}$ as the metal precursor. (a) $\\Delta G$ (750 K), (b) $\\Delta G$ (600 K), (c) $\\Delta G$ (450 K), (d) $\\Delta G$ (300 K), and (e) $\\Delta E$ (0 K).","id":"test/atomic-layer-deposition/simulation-usecase/16/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/16/figure_2","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1184,"height":1045}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/Collin Mui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1184,"height":1045,"image_format":"jpeg","image_sha256":"7ac1a99c65a436a44a0d65d3ad2697e98df91871b3c67261460f6620d71d9f17","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_16_figure_3.jpg","caption":"Figure 3. Energetics of the ethyl group-transfer pathway for the metal half-reaction with $\\mathrm{Hf(OEt)_4}$ as the metal precursor. (a) $\\Delta G$ (750 K), (b) $\\Delta G$ (600 K), (c) $\\Delta G$ (450 K), (d) $\\Delta G$ (300 K), and (e) $\\Delta E$ (0 K).","id":"test/atomic-layer-deposition/simulation-usecase/16/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/16/figure_3","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1169,"height":1053}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/Collin Mui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1169,"height":1053,"image_format":"jpeg","image_sha256":"ef05fcb93d7851c4d013aa01bd9f3c904690f1cc188baecf97c9c3780cc8a5b4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_16_figure_4.jpg","caption":"Figure 4. Energetics of the $\\beta$ -hydride-elimination pathway for the metal half-reaction with $\\mathrm{Hf(OEt)_4}$ as the metal precursor. (a) $\\Delta G$ 750 K), (b) $\\Delta G$ 600 K),c $\\Delta G$ 450 K)d $\\Delta G$ 300 Kand e $\\Delta E$ 0K.","id":"test/atomic-layer-deposition/simulation-usecase/16/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/16/figure_4","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1169,"height":1039}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/Collin Mui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1169,"height":1039,"image_format":"jpeg","image_sha256":"e62f5fbe8da20d7d79e5506165cc955cb969245abc8ce1d78aebd98b639f31a7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_16_figure_5.jpg","caption":"Figure 5. Energetics of the hydrogen-transfer pathway for the oxygen half-reaction with $\\mathrm{Hf(OEt)_4}$ as the metal precursor. (a) $\\Delta G$ (750 K), (b) $\\Delta G$ (600 K), (c) $\\Delta G$ (450 K), (d) $\\Delta G$ (300 K), and (e) $\\Delta E$ (0 K).","id":"test/atomic-layer-deposition/simulation-usecase/16/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/16/figure_5","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1069,"height":1008}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/Collin Mui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1069,"height":1008,"image_format":"jpeg","image_sha256":"c46ffdd9bf8ffcbc88b49f2116ffe4d525d90a8d124f7552f8e3af05add05bc0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_16_figure_6.jpg","caption":"Figure 6. Energetics of the ethyl group-transfer pathway for the incomplete metal half-reaction with $\\mathrm{Hf(OEt)_4}$ as the metal precursor. (a) $\\Delta G$ (750 K), (b) $\\Delta G$ (600 K), (c) $\\Delta G$ (450 K), (d) $\\Delta G$ (300 K), and (e) $\\Delta E$ (0 K).","id":"test/atomic-layer-deposition/simulation-usecase/16/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/16/figure_6","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1158,"height":1036}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/Collin Mui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1158,"height":1036,"image_format":"jpeg","image_sha256":"ee4a09872e168f70becd06b88f3a86dfe0b2323915a22e7544464181b2b710d1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_16_figure_7.jpg","caption":"Figure 7. Energetics of the $\\beta$ -hydride-elimination pathway for the incomplete metal half-reaction with $\\mathrm{Hf(OEt)_4}$ as the metal precursor. (a) $\\Delta G$ $(750~\\mathrm{K})$ b $\\Delta G$ $(600~\\mathrm{K})$ c $\\Delta G$ $(450~\\mathrm{K})$ d $\\Delta G$ $(300~\\mathrm{K})$ and (e) $\\Delta E$ $(0\\mathrm{K})$","id":"test/atomic-layer-deposition/simulation-usecase/16/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/16/figure_7","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1159,"height":1058}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/Collin Mui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1159,"height":1058,"image_format":"jpeg","image_sha256":"19227bac620b9c966c463a05617920327674b569cd14f6185d71d331a072d024","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_16_figure_8.jpg","caption":"Figure 8. Energetics of the nongrowth ligand-exchange surface reaction between $\\mathrm{Hf(OEt)_4}$ and the $\\mathrm{Hf - OEt^{*}}$ surface site. (a) $\\Delta G$ (750 K), (b) $\\Delta G$ (600 K), (c) $\\Delta G$ (450 K), (d) $\\Delta G$ (300 K), and (e) $\\Delta E$ (0 K).","id":"test/atomic-layer-deposition/simulation-usecase/16/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/16/figure_8","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1041,"height":1078}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/Collin Mui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1041,"height":1078,"image_format":"jpeg","image_sha256":"1b4c31ac7a6456a653e9a7dc2e171df3e3361115fc97760409568e0c9ca51233","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_16_figure_9.jpg","caption":"Figure 9. Energetics of the ethyl group-transfer pathway of the self-limiting surface reaction between $\\mathrm{Hf(OEt)_4}$ and the $\\mathrm{Hf - OEt^*}$ surface termination group. (a) $\\Delta G$ $(750~\\mathrm{K})$ b $\\Delta G$ $(600~\\mathrm{K})$ c $\\Delta G$ $(450~\\mathrm{K})$ d $\\Delta G$ $(300~\\mathrm{K})$ and (e) $\\Delta E$ $(0\\mathrm{K})$","id":"test/atomic-layer-deposition/simulation-usecase/16/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/16/figure_9","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1172,"height":1058}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/16/Collin Mui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1172,"height":1058,"image_format":"jpeg","image_sha256":"85b7394baf6b7be111a3c7b932668efad38e0d0226e738af46563c7748800c8e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_41_fig_3.jpg","caption":"Fig. 3 Energy profile of the dissociation processes of $\\mathrm{Cu(acac)_2}$ on the $\\mathrm{Cu(110)}$ surface.","id":"test/atomic-layer-deposition/simulation-usecase/41/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/41/fig_3","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the energy changes at various points in a reaction pathway using two different computational methods: GGA-PBE and vdW-DF.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | GGA-PBE Energy (eV) | vdW-DF Energy (eV) |\\n|---|---|---|\\n| Cu(acac)₂(g) | 0.00 | 0.00 |\\n| Cu(acac)₂@T | -0.48 | -1.42 |\\n| Cu(acac)₂@H | -1.51 | -2.16 |\\n| TS1 | -0.92 | -1.68 |\\n| Cu(acac)* + acac* | -1.88 | -2.29 |\\n| TS2 | -1.32 | -1.79 |\\n| Cu* + 2acac* | -2.10 | -2.61 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Red corresponds to vdW DF.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TS1 is the transition state for dissociation of one acac ligand from adsorbed Cu(acac)2.\\n\\nThe barrier is 0.59 eV for PBE and 0.48 eV for vdW DF.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"PBE gives 2.10 eV exothermicity for the full process.\\n\\nvdW DF gives 2.61 eV exothermicity for the full process\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The paper notes that GGA PBE does not capture van der Waals forces, which can lead to underestimated binding for weakly bound adsorption states. Using vdW DF increases the adsorption energies and can shift how strongly the ligands interact with the surface. For ALD interpretation, this affects predicted sticking, surface diffusion into the most stable site, and the thermodynamic driving force for the first ligand loss step.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":655,"height":342}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/41/Xiao Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":658,"height":344,"image_format":"jpeg","image_sha256":"69b45fe615e01f6c814d00abc74153e0dc87d28733da1e261f278ac002fb8f82","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_46_fig_3.jpg","caption":"Fig. 3. Energy variations for the (a) BDMAS and (b) TeDMAS reaction with $-\\mathrm{OH}$ on the surface. The unit values are shown in Å.","id":"test/atomic-layer-deposition/simulation-usecase/46/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/46/fig_3","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Calculated reaction energy profile for the surface reaction of BDMAS with a hydroxyl group on the Si(001) surface, showing adsorption, transition, and reaction states with a low reaction barrier that indicates kinetically favorable ligand elimination.\"},{\"panel_id\":\"b\",\"text\":\"Calculated reaction energy profile for the surface reaction of TeDMAS with surface –OH groups on Si(001), showing strong adsorption but a high reaction barrier consistent with steric hindrance and kinetically unfavorable surface reactions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| State | Energy (eV) |\\n|---|---|\\n| Adsorption state | 0.69 |\\n| Transition state | 1.10 |\\n| Reaction state | 1.49 |\\n| Adsorption state | 2.53 |\\n| Transition state | 1.90 |\\n| Reaction state | 1.49 |\\n| Adsorption state | 0.28 |\\n| Reaction state | -1.69 |\"},{\"panel_id\":\"b\",\"text\":\"| State | Energy (eV) |\\n|---|---|\\n| Adsorption state | 0.84 |\\n| Transition state | 1.03 |\\n| Reaction state | 1.83 |\\n| Adsorption state | 2.23 |\\n| Transition state | 2.02 |\\n| Reaction state | 1.81 |\\n| Adsorption state | 1.67 |\\n| Reaction state | -1.69 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure demonstrates that although both precursors adsorb on the hydroxylated silicon surface, only BDMAS undergoes a kinetically favorable surface reaction due to its low energy barrier. In contrast, the high barrier observed for TeDMAS indicates strong steric constraints that hinder ligand elimination, making it unsuitable for efficient ALD despite strong adsorption.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"BDMAS exhibits a low reaction barrier of 0.28 eV, whereas TeDMAS shows a much higher barrier of 1.81 eV.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Number of DMA ligands bonded to the Si center, Degree of steric hindrance around the reactive Si atom, Extent of bond distortion at the transition state, Distance between N(DMA) and H–OH during proton transfer\"}]}]","bbox":[{"panel_id":"a","x":8,"y":7,"width":580,"height":484},{"panel_id":"b","x":633,"y":4,"width":570,"height":487}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/46/Yong-Chan Jeong et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":1211,"height":495,"image_format":"jpeg","image_sha256":"9a8aca511b216276b0b43d9d835d186ed80c3a7c244ce87bd8310c7a3c9ab518","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_51_fig_4.jpg","caption":"Fig. 4 Calculated energy diagram of $\\mathsf{H}_{2}$ and $\\mathsf{N}_2$ decomposition on the TiN (001), the Ti-terminated TiN (111), and N-terminated TiN (111) surface.","id":"test/atomic-layer-deposition/simulation-usecase/51/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/51/fig_4","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents calculated energy diagrams for H₂ and N₂ decomposition on TiN surfaces (TiN (001), Ti-terminated TiN (111), and N-terminated TiN (111)), showing activation energies and reaction energies. H₂ dissociation is most facile on the N-terminated TiN (111) surface, while N₂ dissociation occurs only on the Ti-terminated TiN (111). The comparison highlights surface-dependent reactivity, with distinct activation barriers and reaction energies across the three TiN surfaces.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Figure | Energy (eV) |\\n| --- | --- |\\n| TiN (001) | E_a = 4.92, E_s = 1.68, 3.25, 1.00, -0.04, 0.01 |\\n| N-terminated TiN (111) | E_a = 1.45, E_s = 0.26, 1.23, -0.01, -0.01, -4.67 |\\n| Ti-terminated TiN (111) | E_a = 0.11, E_s = 0.92, -2.60, -3.44, -5.50 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"TiN (001): H₂ Ea = 4.92 eV; N₂ Ea = 4.92 eV; reaction energies Es = 1.68, 3.25, 1.00, -0.04, 0.01 eV, Ti-terminated TiN (111): H₂ Ea = 0.11 eV; N₂ Ea = 0.92 eV; reaction energies Es = -2.60, -3.44, -5.50 eV, N-terminated TiN (111): H₂ Ea = 0.26 eV; N₂ Ea = 1.45 eV; reaction energies Es = 1.23, -0.01, -0.01, -4.67 eV\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Ti-terminated TiN (111) surface strongly binds N atoms, allowing N₂ dissociation with a moderate activation energy. The N-terminated TiN (111) surface, in contrast, has a very high binding energy for H atoms, facilitating H₂ dissociation with a low activation barrier, but does not stabilize N atoms sufficiently, so N₂ remains undissociated. These differences highlight how surface termination controls molecular dissociation and energetics, influencing catalytic and surface reaction performance.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The N-terminated TiN (111) surface shows the lowest activation energy for H₂ dissociation (0.26 eV).\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":661,"height":428}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":661,"height":428,"image_format":"jpeg","image_sha256":"80f0249ed7e20e433c676b023fcfa3c8fdd2f4c9f7ad06dea4fa9e2717f12c74","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_51_fig_8.jpg","caption":"Fig. 8 Calculated energy diagram of $\\mathsf{B}_2\\mathsf{H}_6$ decomposition on the H-covered N-terminated TiN (111) surface.","id":"test/atomic-layer-deposition/simulation-usecase/51/fig_8","sample_id":"atomic-layer-deposition/simulation-usecase/51/fig_8","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the calculated energy diagram for the stepwise decomposition of B₂H₆ on the H-covered N-terminated TiN (111) surface. Each step is labeled with the corresponding activation or reaction energy, illustrating how the B–H and B–B bonds break sequentially. The diagram highlights which steps are energetically favorable (exothermic) and which are uphill, indicating the limited extent of decomposition due to surface passivation by hydrogen.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | Energy (eV) | Description |\\n|---|---|---|\\n| 1st B-H dissociation | 0.87 | First H atom of B2H6 reacts with surface H, desorbing H2; B2H5 remains adsorbed |\\n| 2nd B-H dissociation | 1.07 | H atom of B2H5 reacts with surface H, desorbing H2; further decomposition |\\n| B-B bond cleavage | 0.40 | B-B bond dissociation occurs on the surface |\\n| BH2* + BH2* formation | -0.05 | Intermediate species formed after partial dissociation |\\n| BH* + BH* formation | -0.36 | Further dissociation of BH2 species |\\n| B* + B* formation | 1.25 | Final dissociation step; remaining BH species difficult to break, endothermic |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The H-covered surface partially passivates the TiN surface, limiting the extent of B₂H₆ decomposition. While the first few steps are energetically favorable (exothermic), the later steps become endothermic and less likely to occur. This suggests that H coverage can control precursor reactivity, influencing the efficiency of subsequent ALD cycles and preventing full dissociation of B₂H₆ on the surface.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 2nd B–H dissociation step, with an activation energy of 1.07 eV.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The reaction occurs in several sequential steps, including B–H and B–B bond dissociations.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"B₂H₅ adsorbed after first H–H desorption, BH₂ + BH₂, BH* + BH, B + B***\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1203,"height":761}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/51/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":1203,"height":761,"image_format":"jpeg","image_sha256":"385af47d01f3dcb925320cc08cd4b875b6e0719c0eb32bcf9d9c7eecd8d4f503","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_12_figure_10.jpg","caption":"Figure 10. Pictorial representation of possible pathways in $\\mathrm{H}_2\\mathrm{O}$ formation and desorption. The horizontal dotted line connecting each minimum corresponds to the energy change relative to geometry G1, which is also $\\mathrm{M}_{\\mathrm{A}}^{2}$ in Figure 7.","id":"test/atomic-layer-etching/simulation-usecase/12/figure_10","sample_id":"atomic-layer-etching/simulation-usecase/12/figure_10","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a DFT-derived conceptual energy landscape for H₂O formation and desorption, showing relative energies of surface geometries G1–G6. Atomic models illustrate representative configurations, while horizontal dashed lines indicate energy differences referenced to geometry G1. The pathway highlights a strongly endothermic final step associated with H₂O desorption.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 2.5 eV per desorbed H₂O molecule (from G1 → G6).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The desorption step is strongly endothermic because the pathway culminates in a large increase in relative energy, reaching approximately 2.5 eV. The figure indicates that separating an H₂O molecule from the surface corresponds to the highest-energy configuration, making this step thermodynamically unfavorable compared to earlier surface rearrangements.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The highest energetic cost occurs near geometry G6, where the relative energy reaches its maximum value. This configuration corresponds to the final stage of the pathway, associated with H₂O formation and separation from the surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":4,"y":2,"width":672,"height":604}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":678,"height":611,"image_format":"jpeg","image_sha256":"1eef80e84e75522e01d087c55ead5bedfa6fbc210d6225f1eae449f63c7f044f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_12_figure_3.jpg","caption":"Figure 3. Chart showing the geometries and binding energies of identified minima with respect to one HF adsorption at the $\\theta -\\mathrm{Al}_2\\mathrm{O}_3$ $(\\overline{2} 01)$ surface. Here, $\\mathrm{M}^0$ corresponds to the clean alumina surface. $\\mathrm{M}_{\\mathrm{A}}^{\\mathrm{I}}$ and $\\mathrm{M}_{\\mathrm{B}}^{\\mathrm{I}}$ denote molecularly and dissociatively adsorbed HF, respectively. $\\mathrm{M}_{\\mathrm{C}}^{\\mathrm{I}}$ and $\\mathrm{M}_{\\mathrm{D}}^{\\mathrm{I}}$ refer to the geometries in which the dissociated H atom hopped to an adjacent O atom in the same row and to an oxygen atom in the adjacent row, respectively. Activation energies where computed are shown in Figure 4.","id":"test/atomic-layer-etching/simulation-usecase/12/figure_3","sample_id":"atomic-layer-etching/simulation-usecase/12/figure_3","subset":"reaction-energy-profile-diagram","split":"test","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a DFT-derived energetic landscape for HF adsorption on the θ-Al₂O₃ ( 2̄01 ) surface, showing five representative configurations (M⁰, M₁ₐ, M₁ʙ, M₁c, M₁ᴅ). The clean surface (M⁰) is taken as the reference state, while molecular HF adsorption (M₁ₐ) is weakly stabilizing. Dissociative adsorption configurations are substantially more stable, with progressive hydrogen migration leading to lower energies. Among the identified minima, M₁ᴅ—where the dissociated hydrogen atom relocates to an oxygen atom in an adjacent row—is the most energetically favorable configuration.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| State | Description | Binding energy (eV) |\\n|---------|--------------------------------------------------|---------------------|\\n| M⁰ | Clean θ-Al₂O₃ (¯201) surface | 0.00 (reference) |\\n| M₁ₐ | Molecular (undissociated) HF adsorption | –0.44 |\\n| M₁ʙ | Dissociative adsorption (H–O, F–Al) | –1.74 |\\n| M₁c | Dissociated H hopped to adjacent O (same row) | –1.31 |\\n| M₁ᴅ | Dissociated H hopped to O in adjacent row | –2.11 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The most energetically stable configuration shown is M₁ᴅ, with a binding energy of –2.11 eV. In this state, HF has dissociated and the hydrogen atom has relocated to an oxygen site in an adjacent surface row. The lower energy relative to other configurations indicates that this dissociative arrangement is thermodynamically favored among the states considered.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"• M₁ₐ (molecular adsorption): –0.44 eV \\n, • M₁c (dissociative, same-row H hop): –1.31 eV \\n, • M₁ʙ (dissociative adsorption): –1.74 eV \\n, • M₁ᴅ (dissociative, adjacent-row H hop): –2.11 eV\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The most favorable dissociative state (M₁ᴅ) is more stable than molecular adsorption (M₁ₐ) by approximately 1.67 eV.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":3,"y":8,"width":508,"height":393}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":513,"height":400,"image_format":"jpeg","image_sha256":"451f33d404875c9310689aee2528deb7cdc7521a00f562bcca92605078b514a0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/reaction-energy-profile-diagram/train/metadata.jsonl b/subsets/reaction-energy-profile-diagram/train/metadata.jsonl index ac772a533915a3eeab2d5f62ee83a0cd8786fa90..5cabe411c5455ead1760830fe49bc889c9a73dd0 100644 --- a/subsets/reaction-energy-profile-diagram/train/metadata.jsonl +++ b/subsets/reaction-energy-profile-diagram/train/metadata.jsonl @@ -1,43 +1,43 @@ -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_10_figure_5.jpg","caption":"Figure 5. Energy profiles computed by DFT method (PBE-D3) for the chemisorption of InCp on (a) hydrogenated silicon (Si-H termination) and (b) on hydroxylated silicon oxide (Si-OH termination).","id":"train/atomic-layer-deposition/simulation-usecase/10/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/10/figure_5","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":511,"height":680,"image_format":"jpeg","image_sha256":"a4cea6fea5cde03de08ff0b232429ef00af2362fc048f929aa2af9c597c0ec80","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":330,"width":510,"height":349},{"panel_id":"a","x":0,"y":2,"width":507,"height":329}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"DFT-computed energy profile (PBE-D3) for InCp chemisorption on hydrogenated silicon (Si-H termination). The reaction is endothermic with a final energy of +0.31 eV and an activation barrier of 0.36 eV. Molecular snapshots show the InCp precursor, transition state, and the surface-bound In species with released cyclopentadiene (HCp).\"},{\"panel_id\":\"b\",\"text\":\"DFT-computed energy profile for InCp chemisorption on hydroxylated silicon oxide (Si-OH termination). The reaction is exothermic with a final energy of -0.30 eV and a lower activation barrier of 0.28 eV. The favorable thermodynamics and kinetics on Si-OH compared to Si-H explain the selectivity of In2O3:H ALD.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | Energy (eV) |\\n|---|---|\\n| Initial State | 0.00 |\\n| Transition State | 0.36 |\\n| Final State | 0.31 |\"},{\"panel_id\":\"b\",\"text\":\"| Reaction Step | Energy (eV) |\\n|---|---|\\n| Initial State | 0.00 |\\n| Transition State | 0.28 |\\n| Final State | -0.30 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Panel (a) shows a larger barrier (0.36 eV) and ends above the starting energy (~+0.31 eV), so it is less favorable thermodynamically. Panel (b) shows a smaller barrier (0.28 eV) and ends below the start (~−0.30 eV), so it is more favorable. Overall, (b) is both kinetically and thermodynamically more favorable than (a).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A negative final-state energy indicates a more stable bound/relaxed product state on that surface. Here, the oxygen-containing surface model in (b) stabilizes the final state much more than the oxygen-free surface in (a). This is consistent with the idea that surface termination strongly affects adsorption/reaction energetics and therefore nucleation behavior.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"y-axis: Energy (eV)\\n\\n, x-axis: Reaction coordinate (Å)\\n\\n, Black horizontal bars: discrete states (initial / intermediate / final)\\n\\n, Dashed line: the pathway connecting those states\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If one surface termination (like b) provides a lower barrier and an exothermic pathway, nucleation and growth will proceed there earlier and more reliably. Conversely, a higher-barrier, endothermic pathway (like a) can translate into a long nucleation delay and suppressed growth. That contrast is exactly what is exploited in area-selective ALD to obtain deposition on activated regions while inhibiting non-activated regions.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_15_fig2.jpg","caption":"Fig.2. e t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t h t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t","id":"train/atomic-layer-deposition/simulation-usecase/15/fig2","sample_id":"atomic-layer-deposition/simulation-usecase/15/fig2","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/fig2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/Chengxing Cui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":972,"height":372,"image_format":"jpeg","image_sha256":"2d99957543117823f98aebc675212643faba87df089f519c80db88a257eecd5e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":1,"width":961,"height":365}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart illustrates the potential energy diagram plotting the energy changes (ΔE) in kJ/mol for two reaction mechanisms: one occurring on the same dimer (R1a/R2a) and one bridging adjacent dimers (R1b/R2b). The chart traces the reaction progress through chemisorption state (CS), transition states (TS) and physisorption states (PS) .\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction coordinate, a.u.| Species Label | ΔE, kJ/mol | \\n| --- | --- | --- |\\n| 1 | CS | -132.0 | \\n| 2 | TS(R1a) | -41.0 |\\n| 3 | PS(R1a) | -70.5 |\\n| 4 | Product(R1a) | -50.1 |\\n| 5 | TS (R2a) | 19.7 |\\n| 6 | PS(R2a) | 12.9 |\\n| 7 | Product(R2a) | 18.0 |\\n| 2 | TS(R1b) | -71.1 |\\n| 3 | PS(R1b) | -111.1 |\\n| 4 | Product(R1b) | -93.4 |\\n| 5 | TS(R2b) | -20.8 |\\n| 6 | PS(R2b) | -59.9 |\\n| 7 | Product(R2b) | - 39.9 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Product(R2a): 18.0 kJ/mol (highest ΔE → least stable), Product(R2b): -39.9 kJ/mol, Product(R1a): -50.1 kJ/mol, Product(R1b): -93.4 kJ/mol\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Reaction Product(R1b) → TS(R2b) is rate-determining (highest barrier).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Reaction CS → TS(R1a) is the slowest (highest barrier).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is more likely to move forward to form the final product rather than reversing. The energy barrier to proceed forward is 20.0 kJ/mol. The barrier to reverse back to the transition state is nearly double at 39.1 kJ/mol.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_2_fig_2.jpg","caption":"Fig. 2. Reaction path and predicted energetics for reactions of $\\mathrm{HfCl_4}$ on the $\\mathrm{Si(OH)_3 - OH}$ $\\mathrm{Si(OSiH_3)_3 - OH}$ and $\\mathrm{Si_9O_3H_{12} - H - OH}$ surface sites. The corresponding energy values are also listed in Table 1.","id":"train/atomic-layer-deposition/simulation-usecase/2/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/2/fig_2","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/Jie Ren et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":656,"height":900,"image_format":"jpeg","image_sha256":"15b431153b57fb6847ded74ad4de1078f04db52f006b36fdcf8214777d194b7c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":652,"height":900}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a reaction pathway involving Si(OH)₃-OH, Si(OSiH₃)₃-OH, and Si₉O₃H₁₂-H-OH species, showing energy changes (ΔE) in kJ/mol.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| State | Si(OH)3-OH | Si(OSiH3)3-OH | Si9O3H12-H-OH |\\n| --- | --- | --- | --- |\\n| Chemisorption state | -59.8 | -68.9 | -73.1 |\\n| TS | 4.4 | -4.4 | -8.9 |\\n| Physisorption state | -38.5 | -51.6 | -56.0 |\\n| Product | -34.2 | -42.3 | -45.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows four states: chemisorption state, transition state, physisorption state and product formation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The chemisorption state, physisorption state and product formation have the lowest predicted energies, whereas the transition state ehxibits the highest.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the figure, the Si9O3H12-H-OH surface site produces a more stable chemisorbed complex, because it exhibits the lowest predicted energy value.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HCl4 adsorbs onto the Si-OH surface and then reacts through a four-center transition state. Next, a physisorbed HCl species is formed, and finally the product species is formed.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_2_fig_3.jpg","caption":"Fig. 3. Reaction path and predicted energetics for reactions of $\\mathrm{H}_2\\mathrm{O}$ on the $\\mathrm{Si(OH)_3 - OHfCl_3}$ , $\\mathrm{Si(OSiH_3)_3 - OHfCl_3}$ and $\\mathrm{Si_9O_3H_{12} - H - OHfCl_3}$ surface sites. The corresponding energy values are also listed in Table 1.","id":"train/atomic-layer-deposition/simulation-usecase/2/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/2/fig_3","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/Jie Ren et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":656,"height":775,"image_format":"jpeg","image_sha256":"6837b9be17b60fcb0cd2e0a6de143a7a5c1a60a5ac62f8d52fac4879aa4e7da5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":653,"height":772}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a reaction pathway and predicted energetics for reactions of H2O on different surfaces sites.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| State | Si(OH)3-OHfCl3 | Si(OSiH3)3-OHfCl3 | Si9O3H12-H-OHfCl3 |\\n| --- | --- | --- | --- |\\n| Chemisorption state | -58.8 | -56.9 | -54.6 |\\n| TS | 19.9 | 22.3 | 24.3 |\\n| Physisorption state | -9.7 | -1.2 | -1.9 |\\n| Product | -4.9 | -1.0 | -0.7 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows four states: chemisorption state, transition state, physisorption and product formation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The chemisorption state shows the lowest predicted energy values. Then, the energy increases strongly for the transition state, followed by a decrease for the physisorption state, which has similar energy values to those of the products.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Si(OH)3-OHfCl3 because exhibits the lowest predicted energy value.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The reaction is weakly exothermic because its predicted energy values is 0.7 kJ/mol.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_23_fig_3.jpg","caption":"Fig 3. The variation of the relative energies about the distance between two hydroxyls at (a) Pt (111), (b) Pt (100) and (c) Pt edge sites. Note that the relative energies were calculated with the energy of a certain structure as energy zero $(EZ)$ , and the distance $(d_{\\mathrm{HO - OH}})$ between double hydroxyls was defined as the distance between the oxygen atoms.","id":"train/atomic-layer-deposition/simulation-usecase/23/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/23/fig_3","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"reaction energy profile diagram"},{"panel_id":"c","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/Jiaqiang Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1361,"height":361,"image_format":"jpeg","image_sha256":"3751615789e8425efc4c9c5fff177583cdc980cbccc550fc1a3354257a901c66","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":7,"width":466,"height":354},{"panel_id":"b","x":475,"y":6,"width":439,"height":353},{"panel_id":"c","x":919,"y":0,"width":437,"height":359}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_23_fig_5.jpg","caption":"Fig. 5 The decomposition pathways of DMAI on Pt (a) (111), (b) (100) and (c) edge sites with double hydroxyls.","id":"train/atomic-layer-deposition/simulation-usecase/23/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/23/fig_5","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"reaction energy profile diagram"},{"panel_id":"c","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/Jiaqiang Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":650,"height":1081,"image_format":"jpeg","image_sha256":"47712ca0570967ad529afc099950bfd1c82ed6b8138af44857237b37317ef8ba","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":650,"height":367},{"panel_id":"b","x":0,"y":371,"width":648,"height":350},{"panel_id":"c","x":0,"y":724,"width":648,"height":353}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_23_fig_6.jpg","caption":"Fig. 6 The hydrolyzation pathways on different Pt sites: (a) Pt(111), (b) Pt(100) and (c) Pt edge sites.","id":"train/atomic-layer-deposition/simulation-usecase/23/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/23/fig_6","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"reaction energy profile diagram"},{"panel_id":"c","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/Jiaqiang Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1364,"height":559,"image_format":"jpeg","image_sha256":"91d40790d9020c6b8826aa9ef5476fb063e06a8b4bc93765b33530b6f1858a46","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":487,"height":556},{"panel_id":"b","x":493,"y":2,"width":437,"height":555},{"panel_id":"c","x":932,"y":0,"width":430,"height":559}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_10.jpg","caption":"Figure 10. Energetic overview of the disintegration of the $\\mathrm{Si}_{\\mathrm{SMI}} - \\mathrm{O}_{\\mathrm{surf}}$ bond with the Al precursors for (a) a single SMI and (b) a blocking layer density of $2.5 \\mathrm{SMIs} / \\mathrm{nm}^2$ within the A.1-O:123/45/6 SMI configuration. A depiction of several adsorbate structures is given in Figure S9. Total energy (dispersion contribution) with respect to the free reactants. All energies in kiloicules per mole.","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_10","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":561,"height":1330,"image_format":"jpeg","image_sha256":"e15245998b2dc5b0dbaa19e68ccf95e19f3b2c041bbb52bf2e7038f08af16b1e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":556,"height":678},{"panel_id":"b","x":5,"y":677,"width":553,"height":652}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates the energy changes (ΔE) during the reaction of TMA and TEA with O1 of A.1-O:123 and A.1-O:13 at different stages: Adsorption (Ads), Transition State (TS), and Product (Prod).\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the energy changes (ΔE) during the reaction involving TMA and TEA with O4 and O1 of A.1-O:123/45/6 at different stages: Adsorption (Ads), Transition State (TS), and Product (Prod).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | TMA with O1 of A.1-O:123 | TEA with O1 of A.1-O:13 |\\n|---|---|---|\\n| Ads | -55 (-60) | -77 (-88) |\\n| TS | +38 (-65) | +28 (-101) |\\n| Prod | -92 (-59) | -147 (-86) |\"},{\"panel_id\":\"b\",\"text\":\"| Reaction Step | TMA with O4 of A.1-O:123/45/6 | TMA with O1 of A.1-O:123/45/6 | TEA with O1 of A.1-O:123/45/6 |\\n|---|---|---|---|\\n| Ads | -9 (-81) | -97 (-77) | -107 (-118) |\\n| TS | +110 (-118) | +93 (-86) | +83 (-83) |\\n| Prod | -18 (-133) | -101 (-94) | -134 (-86) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA's smaller methyl ligands allow it to access the O4 adsorption site (ΔE_ads = −9 kJ mol⁻¹) where bulkier TEA cannot adsorb, giving TMA an additional low-barrier decomposition channel (ΔE_A = 92 kJ mol⁻¹).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The values in parentheses represent the dispersion energy contribution (ΔE_disp) to the total energy at each state.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. TEA shows higher activation barriers and more endothermic reaction energies at the blocking layer, making Si_SMI−O_surf disintegration less favorable compared to TMA.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Activation barriers more than double when going from isolated SMI to the blocking layer. For TMA at O1, ΔE_A increases from 93 to 190 kJ mol⁻¹; for TEA at O1, from 105 to 217 kJ mol⁻¹. This demonstrates the \\\"reactivity reduction\\\" effect where the dense SMI layer destabilizes transition states through steric repulsion.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_12.jpg","caption":"Figure 12. Overview of the activation energies $(\\Delta E_{\\mathrm{A}})$ of a the $\\mathrm{C} - \\mathrm{O}$ bond intersection and (b) the methoxy-SMI intersection reaction at an unreacted methoxy group for an isolated SMI at two full coverage SMI layer densities of 2.5 and $3.4\\mathrm{SMIs} / \\mathrm{nm}^2$","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_12","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":658,"height":530,"image_format":"jpeg","image_sha256":"70f237bac267f34d1f43c17fc197cb13d6be3ee9a6e9a96c24071ab1176619f5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":318,"height":525},{"panel_id":"b","x":330,"y":2,"width":326,"height":526}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows activation energies (ΔE_A) for the C-O bond intersection reaction of TMA and TEA at three SMI layer densities. Barriers increase with SMI density: TMA rises from 179 to 207 kJ/mol, TEA from 160 to 197 kJ/mol. All barriers exceed 150 kJ/mol, indicating this reaction is unlikely under typical ALD conditions.\"},{\"panel_id\":\"b\",\"text\":\"The chart shows activation energies for the methoxy-SMI intersection reaction with TMA, TEA, and H₂O. TMA and TEA barriers increase substantially with SMI density (99 to 173 kJ/mol for TMA; 115 to 203 kJ/mol for TEA), while H₂O barriers remain low (97 to 112 kJ/mol) regardless of SMI density.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Condition | TMA (Delta E_A, kJ/mol) | TEA (Delta E_A, kJ/mol) |\\n|---|---|---|\\n| Isolated SMI | 179 (-10) | 160 (-16) |\\n| 2.5 SMI per nm^2 | 206 (0) | 193 (-4) |\\n| 3.4 SMI per nm^2 | 207 (-5) | 197 (-8) |\"},{\"panel_id\":\"b\",\"text\":\"| Condition | TMA (Delta E_A, kJ/mol) | TEA (Delta E_A, kJ/mol) | H2O (Delta E_A, kJ/mol) |\\n|---|---|---|---|\\n| Isolated SMI | 99 (-17) | 115 (-10) | 97 (-7) |\\n| 2.5 SMI per nm^2 | 172 (-12) | 155 (-16) | 112 (-12) |\\n| 3.4 SMI per nm^2 | 173 (-25) | 203 (-38) | 106 (-6) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increase results from steric effects within the denser blocking layer. The transition states for these reactions require spatial rearrangement of groups around the SMI silicon atom. In a denser layer, displacing SMI substituents to accommodate the approaching precursor ligand invokes repulsive forces from neighboring SMIs. This \\\"reactivity reduction\\\" effect destabilizes the transition state, raising the activation barrier. The effect is more pronounced for bulkier precursors like TEA and for reactions requiring larger structural changes at the SMI center.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Each bar represents the activation energy for the C-O bond intersection reaction, with blue bars for TMA and yellow bars for TEA. Numbers in parentheses indicate the dispersion energy contribution to each barrier.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"H₂O activation energies (97 to 112 kJ/mol) are significantly lower and nearly independent of SMI density, while TMA and TEA barriers increase substantially with density, reaching 173 and 203 kJ/mol at 3.4 SMI/nm², respectively.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Key implications include: unreacted methoxy groups will convert to reactive hydroxyl groups during the first water pulse; these hydroxyl groups can then react with Al precursors in subsequent pulses; this may create SMI-bound Al fragments that negatively impact selectivity.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_4.jpg","caption":"Figure 4. (a) Energetic profile of the reaction of TMPS with the $\\mathrm{Si - OH}$ groups at O1, O3, and O2 of A.1. The total, activation, and reaction energies $(\\Delta E,\\Delta E_{\\mathrm{A}},$ and $\\Delta E_{\\mathrm{R}},$ respectively) are colored orange, and the respective Gibbs energies $(\\Delta G,\\Delta G_{\\mathrm{A}},$ and $\\Delta G_{\\mathrm{R}},$ respectively; $180^{\\circ}\\mathrm{C},$ 133.3 $\\times 10^{-6}$ bar) are colored green. Activation energies are stated relative to the previous minimum in brackets, while reaction energies include an already desorbed methanol. $(\\mathrm{b - h})$ Adsorption and reaction structures of TMPS in side view. The configurations of (b) PS, (c) SB, (d) DB, and (e) TB and the corresponding structures of (f) TS I, (g) TS II, and (h) TS III are shown. Selected bond lengths in angstroms.","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_4","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"},{"panel_id":"h","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1398,"height":1039,"image_format":"jpeg","image_sha256":"7783acc8f1ffafed0a7c866773aac1974a9ec681fb4eef1561b626c7f281fc83","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":39,"y":0,"width":1358,"height":497},{"panel_id":"b","x":367,"y":797,"width":319,"height":242},{"panel_id":"c","x":725,"y":797,"width":319,"height":242},{"panel_id":"d","x":1082,"y":797,"width":316,"height":242},{"panel_id":"e","x":119,"y":521,"width":319,"height":244},{"panel_id":"f","x":546,"y":520,"width":319,"height":244},{"panel_id":"g","x":973,"y":520,"width":320,"height":244},{"panel_id":"h","x":8,"y":798,"width":320,"height":241}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Reaction energy profile for TMPS forming the triply bonded (TB) configuration A.1-O:123 through three consecutive condensation reactions with silanols at O1, O3, and O2. Orange lines show total energies (ΔE) and green lines show Gibbs energies (ΔG) at ALD conditions (180°C, 133.3×10⁻⁶ bar). Values in parentheses are activation energies relative to the previous minimum. While ΔE values are endothermic for each step (+37, +40, +51 kJ/mol), entropic contributions from methanol release make all ΔG_R values exergonic (-45, -45, -15 kJ/mol).\"},{\"panel_id\":\"b\",\"text\":\"Precursor state (PS) structure showing TMPS hydrogen-bonded to a surface silanol. The Si-O distance of 3.777 Å and O-H distance of 1.007 Å indicate hydrogen bonding between the silanol and a methoxy group.\"},{\"panel_id\":\"c\",\"text\":\"Singly bonded (SB) configuration after first condensation, with one Si-O-Si linkage formed. Distance of 3.754 Å shows remaining silanol separation.\"},{\"panel_id\":\"d\",\"text\":\"Doubly bonded (DB) configuration after second condensation, with reduced inter-oxygen distance of 3.420 Å.\"},{\"panel_id\":\"e\",\"text\":\"Triply bonded (TB) configuration where TMPS is bonded to three surface silanols (O1, O2, O3), with Si-O bond lengths of 1.643-1.664 Å.\"},{\"panel_id\":\"f\",\"text\":\"Transition state I (TS I) showing pentavalent silicon at the TMPS center during the first condensation. The elongated Si-O bond (1.860 Å) and proton transfer (O-H = 1.209 Å) are characteristic features.\"},{\"panel_id\":\"g\",\"text\":\"Transition state II (TS II) for the second condensation, with similar pentavalent geometry.\"},{\"panel_id\":\"h\",\"text\":\"Transition state III (TS III) for the third condensation forming the TB configuration.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | Delta G (kJ/mol) | Delta E (kJ/mol) |\\n|---|---|---|\\n| PS | 30 | -93 |\\n| TS I | (+132) | (+142) |\\n| SB | -15 | -56 |\\n| TS II | (+96) | (+102) |\\n| DB | -60 | -16 |\\n| TS III | (+135) | (+129) |\\n| TB | -75 | 35 |\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"},{\"panel_id\":\"h\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Each condensation step releases a methanol molecule into the gas phase, creating a large positive entropy change. At ALD conditions (180°C), the TΔS term significantly contributes to the Gibbs energy, converting endothermic ΔE_R values (+37 to +51 kJ/mol) into exergonic ΔG_R values (-15 to -45 kJ/mol). This entropic driving force makes TB formation thermodynamically feasible despite the unfavorable electronic energies.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The second condensation (TS II) has the lowest barrier at 96-102 kJ/mol (ΔG_A = 96 kJ/mol, ΔE_A = 102 kJ/mol), compared to TS I (132-142 kJ/mol) and TS III (129-135 kJ/mol).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, for the A.1-O:123 configuration. At 180°C with typical dose and soak times of 5 minutes, barriers up to approximately 135-145 kJ/mol can achieve significant conversion (>5-50%). Since all three ΔG_A values (132, 96, and 135 kJ/mol) fall within this range, TB formation is kinetically accessible. However, this is only possible for favorable silanol arrangements like O:123; other TB configurations have prohibitively high energy penalties.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"All transition states show a pentavalent silicon atom at the TMPS center, with simultaneous Si-O bond formation to the surface oxygen and Si-O bond elongation to the departing methoxy group as it accepts a proton to form methanol.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_9.jpg","caption":"Figure 9. RBO opening reactions with TEA and $\\mathrm{H}_2\\mathrm{O}$ . (a) Reaction path of TEA from left to right: vacuum state, physisorption to the top of the blocking layer, intralayer diffusion barrier, adsorbed state at RBO, reaction barrier, and RBO reaction product. The reaction energies $(\\Delta E)$ are given with the contribution to the dispersion in parentheses $(\\Delta E_{\\mathrm{disp}})$ . (b) Reaction of a water molecule with the RBO of the A.2 model and the respective energy barrier. All energies in kJ $\\mathrm{mol}^{-1}$ .","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_9","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":644,"height":1067,"image_format":"jpeg","image_sha256":"8c58edce7945c75f93b8cd083a1068890392bd464478061ea411c32ee8c1e526","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":636,"height":550},{"panel_id":"b","x":3,"y":556,"width":643,"height":513}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_36_figure_3.jpg","caption":"Figure 3. Reaction path for adsorption of TMA on the $\\mathrm{CH}_3$ -terminated surface of ODPA: (a, b) initial states of the TMA and $\\mathrm{CH}_3\\mathrm{CH}_2\\mathrm{CH}_3$ cluster models, respectively, (c) physisorption state, (d) transition state, and (e) chemisorption state between them.","id":"train/atomic-layer-deposition/simulation-usecase/36/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/36/figure_3","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/Seunggi Seo et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":639,"height":486,"image_format":"jpeg","image_sha256":"62126cf2a8531a2dec9d2d1c57812b6db4405ee7dcefdcbcbf949a921855f637","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":5,"width":632,"height":478}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The reaction scheme shows the adsorption pathway of TMA on a CH₃-terminated ODPA surface, with ΔE referenced to the initial state. A shallow minimum at −15.2 kcal/mol corresponds to physisorption, followed by a high-energy transition state at 44.1 kcal/mol. The final chemisorbed state lies slightly above the initial state at 2.5 kcal/mol. The large activation barrier relative to the adsorption well highlights the kinetic difficulty of chemisorption despite modest thermodynamic driving forces.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| State | ΔE (kcal/mol) |\\n|---------------------|----------------|\\n| Initial state | 0.0 |\\n| Physisorbed state | -15.2 |\\n| Transition state | 44.1 |\\n| Chemisorbed state | 2.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Crossing the transition state\\n, -Overcoming the large activation barrier\\n, -Enabling structural rearrangement required for chemisorption\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The physisorbed state is lower in energy (−15.2 kcal/mol) than the chemisorbed state (2.5 kcal/mol).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The transition state.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"When the molecular renderings are viewed alongside the energy diagram, the relative stabilities become apparent through the pairing of structural snapshots with their assigned energy levels. Lower-energy states, such as the physisorbed configuration, appear at downward positions in the diagram and are linked to compact but uncomplicated structures. The transition-state structure is associated with the highest plotted point, making its elevated energy value visually intuitive. The chemisorbed representation connects to an intermediate energy that sits above the initial state but well below the transition peak, completing the comparative picture without requiring any interpretive assumptions.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_42_fig_1.jpg","caption":"Fig. 1 Reaction between the Ti precursor and a water molecule. Black lines indicate reactant and product states, and the red lines indicate transition states. Yellow circles indicate transferred hydrogens. White, emerald, red, and gray spheres represent hydrogen, carbon, oxygen, and titanium atoms, respectively. Numbers are internal energies in the electron volt unit.","id":"train/atomic-layer-deposition/simulation-usecase/42/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/42/fig_1","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/Yeonchoo Cho et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":631,"height":497,"image_format":"jpeg","image_sha256":"519a6fbdd94133fe2c56247c084d9ad20c26a1a6f77f5b4d42a8a7de02079ea7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":626,"height":493}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_10.jpg","caption":"Figure 10. ZPE-corrected PES for the two continuous hydroxylation reactions during the second half-reactions on the adjacent $-\\mathrm{OH}$ groups.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_10","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":673,"height":780,"image_format":"jpeg","image_sha256":"8450a5a3d7cbf6e0ad13b4054efd8ce8d4087e6e52cd689ec2927467cb168950","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":670,"height":778}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_12.jpg","caption":"Figure 12. ZPE-corrected PES for the reaction between $\\mathrm{TiCl_4}$ and the oxygen bridges sites. The labels \"a\" and \"d\" correspond to the structures shown in Figure 11.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_12","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":675,"height":561,"image_format":"jpeg","image_sha256":"60843d4f72333ba351dbd9ca39ba871ae002f05e849d43ff81faad0068fae124","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":672,"height":555}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_14.jpg","caption":"Figure 14. ZPE-corrected PES for the $\\mathrm{H}_2\\mathrm{O} + \\mathrm{SiO}_2 - \\mathrm{Cl}^*$ reaction. The letters correspond to the structures shown in Figure 13.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_14","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_14","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":675,"height":539,"image_format":"jpeg","image_sha256":"edb6197e737163c929fbc13cdf0c21bbfddbd98c9f8e8c9cdd87e86d536ae151","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":672,"height":537}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_3.jpg","caption":"Figure 3. ZPE-corrected potential energy surface for the $(\\mathrm{SiH_3O})_3$ - $\\mathrm{Si - OH^* + H_2O}$ reaction, calculated by using the MC2 model chemistry.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_3","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":672,"height":656,"image_format":"jpeg","image_sha256":"5276106ce082d05af9c91af0f1d13620f3d450a22c4fbd476e80467e61f3134c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":666,"height":652}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_5.jpg","caption":"Figure 5. ZPE-corrected PES for the surface diffusion of $\\mathrm{H}_2\\mathrm{O}$ and the $(\\mathrm{SiH_3O})_3\\mathrm{Si - O - TiCl_3^* + H_2O}$ reaction. RC1, RC2, and RC3 are the three different reactant complexes formed by the different adsorption modes of $\\mathrm{H}_2\\mathrm{O}$ . TS1, TS2, and TS3 are the transition states of the surface reaction. TS4 and TS5 are the transition states for surface diffusion. PC1 and PC2 are product complexes. PSS1 and PSS2 are the two product surface sites obtained through the different reaction pathways.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_5","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":675,"height":573,"image_format":"jpeg","image_sha256":"85cc43855ca97d3a80149712e2c90ebcf8018e1b095a37783f257e796fa25606","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":674,"height":571}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_6.jpg","caption":"Figure 6. ZPE-corrected PES for the three continuous hydroxylation reactions on the isolated $-\\mathrm{OH}$ group. RC: reactant complex; TS: transition state; PC: product complex.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_6","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":675,"height":591,"image_format":"jpeg","image_sha256":"b79caad8e404b2235d15fa3a15c214fb53359f9a0cada3d7c46c0d555a0465de","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":5,"width":670,"height":583}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_9.jpg","caption":"Figure 9. ZPE-corrected PES for the first half-reactions taking place on the adjacent hydrogen-bonded $-\\mathrm{OH}$ groups. The letters correspond to the structures shown in Figure 8.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_9","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":675,"height":547,"image_format":"jpeg","image_sha256":"2599aeeb5d2d43611a0b7b44a7a5411e47d861dfc95545196a3e3a0db88d2e47","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":671,"height":545}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_45_fig_2.jpg","caption":"Fig. 2. Energy variation for the BDEAS reaction with $-\\mathrm{OH}$ on the Si (0 0 1) surface to produce a BDEAS group and $\\mathrm{H}_{2}$ . Perspective views are shown along the [1 00] direction. \"TS\" in this figure indicates a transition state.","id":"train/atomic-layer-deposition/simulation-usecase/45/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/45/fig_2","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/Seung-Bin Baek et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":878,"height":469,"image_format":"jpeg","image_sha256":"a37040a2a0829cd1e3411431403927acbecdf35c29cd53959e257aa9d0a60128","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":876,"height":463}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image represents the energy variation for the bis-diethylaminosilane(BDEAS) reaction with -OH on the Si (0 0 1) surface resulting in BDEAS group and H2. The various conditions of the reaction state represented here are BDEAS away from the surface, BDEAS adsorption, transition state and BDEAS group formation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Energy [eV] | reaction state |\\n|----------------|--------------------|\\n| 0.0 | BDEAS away from surface |\\n| -0.43 | BDEAS adsorption | \\n| 1.60 | Transition state | \\n| -1.38 | BDEAS group formation |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"BDEAS away from the surface (Molecule located ~10 Å above the surface, no interaction)\\n\\nBDEAS adsorption on the surface (Initial interaction with surface atoms; partial bonding begins)\\n\\nTransition State (TS) (Highest-energy configuration with bond rearrangement and H-transfer)\\n\\nBDEAS group formation on the surface (Stable chemisorbed product formed on the surface, releasing H₂)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"BDEAS dissociates more easily on a clean Si surface because the exposed dangling bonds make adsorption strong and the reaction highly exothermic with low barriers. On a SiO₂ surface, the reaction is moderate, proceeding mainly through hydroxyl-assisted ligand exchange with intermediate activation energies. On the N/C/H-terminated surface, the reaction is more controlled and less reactive than clean Si, with lower adsorption strength and slightly higher barriers.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Variations in molecular structure such as more bulky ligands, stronger metal-ligand bonds, or greater steric hindrance generally increase the precursor's thermal stability but raise the activation energy for surface reactions. This leads to poorer adsorption, lower reactivity, and often requires higher deposition temperatures, which can compromise film conformality on high-aspect-ratio structures. Consequently, an optimal precursor balances sufficient volatility and surface mobility with moderate reactivity to enable low-temperature, self-limiting growth of dense, pure, and uniform thin films.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With a low activation barrier (≈0.43 eV) and large exothermicity (≈1.6 eV), the surface reaction should proceed at relatively low ALD temperatures, allowing operation near the lower end of the ALD window to improve precursor adsorption and utilization. Because the reaction is so exothermic there’s a heightened risk of non-self-limiting, CVD-like decomposition (increased GPC, carbon/nitrogen contamination, roughness), so use short precursor pulses, fast/extended purges (or inert gas blow), and milder co-reactants (or plasma control) to preserve self-limiting behavior. If controlled properly, this yields high precursor efficiency and excellent conformality, but poor control of pulse/purge timing or too-high temperature can increase defect density and reduce film quality for SiN/SiC.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_45_fig_3.jpg","caption":"Fig. 3. Energy variation for the BDEAS reaction with $-\\mathrm{OH}$ on the Si (0 0 1) surface to produce a DEAS group and DEA. Perspective views are shown along the [1 00] direction. \"TS\" in this figure indicates a transition state.","id":"train/atomic-layer-deposition/simulation-usecase/45/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/45/fig_3","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/Seung-Bin Baek et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":878,"height":475,"image_format":"jpeg","image_sha256":"5133f4af1d84a394421e103cd549054ada38642552d850f6bd8857e87b728d35","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":876,"height":470}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line graph represents the energy variation for the bis-diethylaminosilane(BDEAS) reaction with -OH on the Si (0 0 1) surface resulting in DEAS group and DEA. The various conditions of the reaction state represented here are BDEAS away from the surface, BDEAS adsorption, transition state and DEAS group formation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Energy [eV] | reaction state |\\n|----------------|--------------------|\\n| 0.0 | BDEAS away from surface |\\n| -0.6 | BDEAS adsorption | \\n| 0.0 | Transition state | \\n| -0.95 | DEAS group formation |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Precursor approaches the OH-terminated surface.\\n\\nBDEAS adsorbs onto an –OH site (weakly at first).\\n\\nLigand exchange / H transfer occurs (proton from –OH transfers to a ligand).\\n\\nA bond breaks (TS) and a volatile fragment (DEA) leaves.\\n\\nDEAS group stays bound to the surface as the chemisorbed species; surface ready for next ALD step.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the energy is lower at the end compared to the start.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The energy is high at the TS state because bonds are partially broken and partially formed, making the structure unstable and requiring extra energy to reach that rearranged configuration.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Low activation energy enables low-temperature, self-limiting growth, ensuring excellent film conformality on complex 3D structures. The exothermic reaction releases energy, driving complete ligand removal and reducing defects, while the presence of a defined transition state indicates controlled, layer-by-layer growth, resulting in dense, uniform, and high-purity films with minimal impurities or pinholes.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_48_fig1.jpg","caption":"Fig.1 Comparison of Gibbs free energy profiles for $\\mathrm{SiH_4}$ and BDMAS half-reactions. The inset shows the structures of $\\mathbf{TS1}^{\\mathrm{SH4}}$ $\\mathbf{P1}^{\\mathrm{SH4}}$ $\\mathbf{TS2}^{\\mathrm{SH4}}$ $\\mathbf{TS1}^{\\mathbf{A}}$ $\\mathbf{P1}^{\\mathbf{A}}$ and $\\mathbf{TS2}^{\\mathbf{A}}$","id":"train/atomic-layer-deposition/simulation-usecase/48/fig1","sample_id":"atomic-layer-deposition/simulation-usecase/48/fig1","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/48/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/48/images/fig1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/48/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/48/Guo-Yong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"48","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":655,"height":536,"image_format":"jpeg","image_sha256":"8f2ced15cdaa85fcde6c6f144c90ce0ecf00ec3ab02adadb60fbd4e4a9651409","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":650,"height":532}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a reaction scheme involving intermediate states (Im), reaction products (P) and transition states (TS) with their corresponding gibbs free energies in kcal/mol.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| State | Energy (kcal/mol) |\\n|---|---|\\n| R | 0.0 |\\n| Im1SiH4 | 3.4 |\\n| Im1A | -0.1 |\\n| TS1SiH4 | 57.8 |\\n| TS1A | 10.7 |\\n| Im2A | 3.2 |\\n| Im2SiH4 | 0.1 |\\n| P1A | -7.5 |\\n| P1SiH4 | -9.4 |\\n| TS2SiH4 | 24.9 |\\n| TS2A | 4.2 |\\n| Im3A | -15.7 |\\n| Im3SiH4 | -35.4 |\\n| P2A | -22.6 |\\n| P2SiH4 | -42.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The activation free energies of the two Si–O formation processes amount to 57.8 and 34.3 kcal/mol, respectively, which show that the silane half-reaction between the SiH4 and surface –OH groups without a catalyst at low temperature to be very difficult.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"By comparison of the activation free energies of the SiH4 and BDMAS half-reactions, it was found that the amino group of the aminosilane can remarkably catalyze the Si–O formation to generate SiO2. We refer to this catalytic aminosilane reaction involving the amino ligand as the self-catalysis\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The formation of one Si–O bond requires one amino group and one –OH group. Because the bis-aminosilane precursor has two amino ligands and the\\nstoichiometric ratio with respect to SiO2 is 1 : 2, BDMAS can produce highly pure and stoichiometric SiO2 films\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_48_fig2.jpg","caption":"Fig.2 Gibbs free energy profiles for the $\\Omega_{2}$ plasma half-reaction.","id":"train/atomic-layer-deposition/simulation-usecase/48/fig2","sample_id":"atomic-layer-deposition/simulation-usecase/48/fig2","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/48/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/48/images/fig2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/48/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/48/Guo-Yong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"48","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":639,"height":641,"image_format":"jpeg","image_sha256":"dd73b4ae0517181d6e0b0303eb9d6e39b50348a48dee5efc2939154ba60ca15a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":635,"height":640}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a reaction pathway with various transition states (TS) and intermediates (Im) along with their corresponding Gibbs free energy changes (ΔG298K) at 298 Kelvin for the O2 plasma half-reaction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔG298K (kcal/mol) |\\n|---|---|\\n| 3O2 | 0.0 |\\n| 1O2 | 38.3 |\\n| 2(3O) | 112.9 |\\n| 2(1O) | 236.4 |\\n| Im1B5 | 117.8 |\\n| Im1B4 | 151.9 |\\n| Im2B5 | 90.1 |\\n| Im1B2/3 | 43.3 |\\n| TS1B4 | 201.9 |\\n| TS1B1 | 140.1 |\\n| TS1B3 | 57.2 |\\n| Im1B1 | 8.5 |\\n| P1B4 | 38.5 |\\n| P1B5 | -23.3 |\\n| TS1B2 | 61.5 |\\n| Im2B3 | -48.9 |\\n| TS2B3 | 23.3 |\\n| P1B2 | -150.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1 3O2 \\n2 1O2 \\n3 2(3O) \\n4 2(1O)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The energy of the excited state of the oxygen molecule, 1O2, is 38.3 kcal/mol higher than that of the ground state. \\nThe energy of two oxygen radicals, 2(3O) , is 74.6 kcal/mol higher than that of 1O2 . The energy of the excited states of two oxygen radicals, 2(1O), is at the highest amounting to 236.4 kcal/ mol. The ground state of the oxygen molecule, 3O2 at 0, is the most stable.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The other oxygen radicals are active species and can oxidize the surface silane to form reactions (B2–B5). With 1O2 there are two pathways (B2 and B3) for oxidation of the silane.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_49_fig_2.jpg","caption":"Fig. 2 Calculated energy diagram of $\\mathsf{B}_2\\mathsf{H}_6$ decomposition on the TiN (001) surface.","id":"train/atomic-layer-deposition/simulation-usecase/49/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/49/fig_2","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":656,"height":491,"image_format":"jpeg","image_sha256":"0826c647a4d6933e1d2b71bd3d8f87593c15ce2e2ab8ead1804d7318f209bc13","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":649,"height":485}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates the energy levels of various boron-hydrogen complexes and their corresponding activation energies.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the molecular structures of boron-hydrogen complexes at different energy levels\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step (Species) | Energy (eV) |\\n|---|---|\\n| B2H6* | -0.06 |\\n| Transition State (B-B) | 1.11 |\\n| BH3* | -1.95 |\\n| Transition State (B-H) | 1.65 |\\n| BH2* | -0.66 |\\n| Transition State (B-H) | 1.75 |\\n| BH* | 0.79 |\\n| Transition State (B-H) | 1.83 |\\n| B* | 2.30 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dissociation of BH to B (the final B–H bond breaking step) presents the highest kinetic barrier, with an activation energy (Ea) of 1.83 eV.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The BH₃ species (adsorbed borane) is the most stable intermediate, corresponding to the global energy minimum of the profile at -1.95 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The final product state (B*) is located at 2.30 eV, which is significantly higher than the initial reactant state (B₂H₆*) at -0.06 eV. This large positive energy change indicates that the overall decomposition reaction on the TiN(001) surface is strongly endothermic and thermodynamically unfavorable, meaning the system prefers to remain in the intermediate BH₃ state rather than fully decomposing.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For effective ALD, the precursor must react completely to leave the desired material (Boron/Tungsten) on the surface while removing ligands. This profile shows that removing Hydrogen from Boron is energetically costly (uphill) and has high barriers, leading to a surface dominated by stable BH₃ intermediates or bare TiN rather than a reactive Boron layer. This explains why the TiN(001) orientation yields poor nucleation and low deposition rates compared to other surfaces.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_49_fig_4.jpg","caption":"Fig. 4 Calculated energy diagram of $\\mathrm{B}_2\\mathrm{H}_6$ decomposition on the Ti-terminated TiN (111) surface.","id":"train/atomic-layer-deposition/simulation-usecase/49/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/49/fig_4","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":661,"height":411,"image_format":"jpeg","image_sha256":"53cfc13fef80607e1ddeaaca0162b1501b0df0eb04fef97534916f998d160e8c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":654,"height":404}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The energy diagram depicts the stepwise decomposition of B2H6 on Ti-terminated TiN (111), beginning with B2H6* adsorption at -4.46 eV and proceeding through sequential B-B and B-H bond cleavages. Activation energies range from 0.07 eV (BH3* to BH2*) to 0.93 eV (BH* to B*), with the final B-H dissociation being the rate-determining step. The overall reaction is exothermic, ending at -5.34 eV for adsorbed B*.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step (Species) | Energy (eV) |\\n|---|---|\\n| B2H6* | -4.46 |\\n| Transition State (B-B) | 0.74 |\\n| BH3* | -4.10 |\\n| Transition State (B-H) | 0.07 |\\n| BH2* | -4.88 |\\n| Transition State (B-H) | 0.61 |\\n| BH* | -5.00 |\\n| Transition State (B-H) | 0.93 |\\n| B* | -5.34 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dissociation of BH to B** (breaking the final B–H bond) presents the highest kinetic barrier, with an activation energy (E_a) of 0.93 eV.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The overall reaction is exothermic (thermodynamically favorable). The system starts at an energy of -4.46 eV for the adsorbed B₂H₆ species and ends at a lower energy of -5.34 eV for the final atomic Boron product. This \\\"downhill\\\" energy landscape indicates that the Ti-terminated TiN(111) surface spontaneously drives the precursor to decompose.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The BH* species (monoborane) represents a local minimum with an energy of -5.00 eV before the final dissociation step.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface facilitates the deposition. Since the reaction products are at a lower energy state than the reactants (exothermic by 0.88 eV) and the activation barriers are relatively surmountable, the surface efficiently converts the precursor into surface-bound Boron. This activity is crucial for creating a high-quality nucleation layer for subsequent Tungsten growth.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_49_fig_6.jpg","caption":"Fig. 6 Calculated energy diagram of $\\mathrm{B}_2\\mathrm{H}_6$ decomposition on the N-terminated TiN (111) surface.","id":"train/atomic-layer-deposition/simulation-usecase/49/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/49/fig_6","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":661,"height":453,"image_format":"jpeg","image_sha256":"f42de77a543f68ef50938637c791ed5fe815bc8e6c64e9d05a0f9ac78f4b443f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":652,"height":447}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents the calculated potential energy profile for the decomposition of B₂H₆ on the N-terminated TiN(111) surface, showing energy changes at various stages.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step (Species) | Energy (eV) |\\n|---|---|\\n| B2H6* | -0.03 |\\n| Transition State (B-B & B-H) | 0.39 |\\n| BH2* + BH* + H* | -7.17 |\\n| BH* | -16.3 |\\n| Transition State (B-H) | 0.14 |\\n| B* | -19.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The final energy state on the N-terminated surface shown here is dramatically lower (-19.0 eV) compared to the Ti-terminated surface (-5.34 eV) and the (001) surface (+2.30 eV). This indicates that the thermodynamic driving force for B₂H₆ decomposition and Boron binding is significantly stronger on the N-terminated TiN(111) surface than on the other crystal orientations, making it the most favorable surface for deposition.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It indicates that the dissociation of the B–H bond at this stage proceeds spontaneously with zero activation energy. This implies that the intermediate species formed after the first step is kinetically unstable on this surface and immediately relaxes to the lower-energy state without requiring thermal activation.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both the B–B and B–H bonds dissociate simultaneously.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The extremely high reactivity and strong binding energy shown in the profile ensure that the B₂H₆ precursor decomposes efficiently to form a stable, dense Boron layer. Since this Boron layer acts as the reducing agent for the subsequent Tungsten (WF6) pulse, an efficient Boron deposition on this specific crystal orientation leads to improved Tungsten nucleation, reducing defects like seams or voids in memory device gates.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_5_figure_3.jpg","caption":"Figure 3. DFT/PBE-D3-level energy profiles for the chemisorption of DEZ on (a) H-terminated Si and (b) OH-terminated $\\mathrm{SiO_2}$ . The zero corresponds to the physisorbed states: DEZ on H-terminated Si, $\\Delta E_{\\mathrm{p}} = -0.37 \\mathrm{eV}$ and on OH-terminated $\\mathrm{SiO_2}$ surface, $\\Delta E_{\\mathrm{p}} = -0.34 \\mathrm{eV}$ . Color code: light gray: carbon; light orange: silicon; red: oxygen; white: hydrogen; and blue: zinc.","id":"train/atomic-layer-deposition/simulation-usecase/5/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/5/figure_3","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":844,"height":339,"image_format":"jpeg","image_sha256":"adcc54d511e869fdf91d537ff5b6a9a890824ed67ba4fd34a609511f20cfa33e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":441,"height":339},{"panel_id":"b","x":472,"y":10,"width":372,"height":329}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figures illustrate the energy profile of DEZ (diethylzinc) adsorption on H-terminated Si and it shows the reaction coordinate with energy changes at specific points.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the energy profile on OH-terminated SiO2 surfaces.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Surface Termination | Initial Energy (eV) | Transition State (eV) | Final Energy (eV) |\\n|---------------------------|----------------------|-------------------------|--------------------|\\n| H-terminated Si (a) | 0.00 | 1.16 | -0.98 |\"},{\"panel_id\":\"b\",\"text\":\"| Surface Termination | Initial Energy (eV) | Transition State (eV) | Final Energy (eV) |\\n|---------------------------|----------------------|-------------------------|--------------------|\\n| OH-terminated SiO₂ (b) | 0.00 | 0.81 | -1.25 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both reactions are thermodynamically favored, however, an activation energy of 1.16 eV was calculated for reaction of DEZ on Si:H and and 0.81 eV for reaction on SiO2. The difference in energy barriers points toward a kinetically hindered surface reaction in the case of DEZ on an H-terminated surface. This may explain the difference in nucleation delay and the selectivity\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Presence of multiple reaction pathways, surface defects, or impurities may affect the deposition process\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. The chemisorption energy of DEZ on H-terminated Si is = -0.98 eV\\n, 2. The chemisorption energy of DEZ on OH-terminated SiO2 is = -1.25 eV\\n, 3. Zero physisorbed states in both cases\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_52_fig2.jpg","caption":"Fig.2 Calculated energy diagram of $\\mathrm{WF}_6$ decomposition on the N-terminated TiN (111) surface.","id":"train/atomic-layer-deposition/simulation-usecase/52/fig2","sample_id":"atomic-layer-deposition/simulation-usecase/52/fig2","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":653,"height":489,"image_format":"jpeg","image_sha256":"44fd42ebf7fc46daa7c87f0ec180ce41e0aa8f3da735d0c2d86245f1648e3049","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":646,"height":482}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a reaction energy pathway for WF₆ decomposition on TiN. Each step represents breaking a W–F bond. Atomic images show the surface states at each step.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Multi-step.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The W–F dissociation step with an activation energy of approximately 3.45 eV.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The WF* intermediates represent partially decomposed species that are stabilized by bonding to the TiN surface. Their energies reflect how surface coordination lowers or raises the energetic cost of subsequent bond-breaking steps. Stronger surface interactions can stabilize intermediates, thereby modifying the height of later activation barriers and influencing the overall decomposition pathway.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-It identifies the rate-limiting step\\n-It predicts temperature requirements\\n-It helps compare precursor reactivity\\n-It guides precursor selection\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_52_fig_4.jpg","caption":"Fig. 4 Calculated energy diagram of $\\mathrm{WF}_6$ decomposition on the B-covered N-terminated TiN (111) surface.","id":"train/atomic-layer-deposition/simulation-usecase/52/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/52/fig_4","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":650,"height":464,"image_format":"jpeg","image_sha256":"f942c3c6f9aa8781a8ae8d1da46d1bd4f35c61c32b563b1d341abcc196ab298f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":646,"height":459}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a calculated reaction energy pathway for the stepwise decomposition of WF₆ on a B-covered, N-terminated TiN (111) surface. The schematic profile shows successive W–F bond dissociation steps, including surface-bound intermediates (WF*) and transition states, with their corresponding energies indicated. Embedded atomic configurations illustrate the structural nature of key intermediates along the reaction pathway and highlight the stabilizing effect of boron-modified surface sites.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The diagram shows a sequence of energy barriers and stabilized intermediates corresponding to successive W–F bond-breaking events. Each increase in energy represents an activation barrier, while each decrease corresponds to a surface-bound intermediate stabilized by interactions with boron and nitrogen sites. This stepwise profile illustrates how WF₆ decomposes progressively rather than through a single concerted reaction.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The final surface-bound tungsten species (W*) at approximately −2.96 eV.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The stabilization of WF* intermediates indicates strong chemical interactions between partially decomposed WF₆ fragments and the modified TiN surface. Boron and nitrogen sites help anchor reaction fragments, lowering their energy relative to gas-phase species. This stabilization influences both reaction kinetics and the feasibility of further decomposition steps.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- It identifies rate-limiting reaction steps.\\n- It reveals the stability of surface-bound intermediates.\\n- It helps compare precursor behavior on different surface terminations.\\n- It guides surface engineering strategies for improved deposition efficiency.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_52_fig_6.jpg","caption":"Fig. 6 Calculated energy diagram of $\\mathrm{BF}_3$ desorption on the W-covered N-terminated TiN (111) surface.","id":"train/atomic-layer-deposition/simulation-usecase/52/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/52/fig_6","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":639,"height":511,"image_format":"jpeg","image_sha256":"73e6ad994750bb3f0f94717fc31476d359a8aa9846351d9dd4596cf9e30340d5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":4,"width":637,"height":502}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a calculated reaction energy pathway for BF₃ desorption from a W-covered, N-terminated TiN (111) surface. The schematic profile shows the formation of BF* intermediates from surface-bound B* and F* species, followed by successive energy barriers leading to BF₃ desorption. Embedded atomic configurations illustrate the structural nature of key intermediates and the desorbed species along the reaction pathway.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The diagram shows that surface-bound boron and fluorine species first combine to form BF* intermediates through energetically activated steps. These intermediates are stabilized on the surface before overcoming additional barriers that lead to BF₃ formation and eventual desorption. The sequence of energy minima and barriers illustrates a stepwise reaction mechanism rather than a direct desorption process.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The step leading to BF₃ desorption with an activation energy of approximately 0.72 eV.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The stabilization of BF* intermediates indicates strong chemical bonding between boron-fluorine fragments and the W-modified TiN surface. These interactions lower the energy of intermediate states, making stepwise reaction pathways feasible. Such stabilization plays a key role in controlling both reaction kinetics and desorption behavior.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- It helps identify rate-limiting surface reactions.\\n- It informs the efficiency of fluorine removal from surfaces.\\n- It affects surface regeneration and impurity control.\\n- It guides optimization of precursor and co-reactant chemistry.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_52_fig_7.jpg","caption":"Fig. 7 Calculated energy diagram of (a) $\\mathsf{H}_{2}$ dissociation on the W-covered N-terminated TiN (111) surface and (b) HF desorption on the H-saturated W-covered N-terminated TiN (111) surface.","id":"train/atomic-layer-deposition/simulation-usecase/52/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/52/fig_7","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":956,"height":400,"image_format":"jpeg","image_sha256":"f79a27aef506335c9430948aee1785295845bcbc5c2fb4af617885b519f98945","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":467,"height":381},{"panel_id":"b","x":495,"y":4,"width":456,"height":349}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates the calculated reaction energy pathway for H₂ dissociation on a W-covered, N-terminated TiN (111) surface. The schematic profile shows the activation barrier associated with H–H bond cleavage and the stabilization of surface-bound H* species, with atomic configurations illustrating the initial and final states.\"},{\"panel_id\":\"b\",\"text\":\"The figure presents the calculated reaction energy pathway for HF desorption from an H-saturated, W-covered N-terminated TiN (111) surface. The diagram highlights the higher activation barrier for HF formation and desorption, along with the energetic state of surface-bound intermediates before desorption.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The energy pathway shows that molecular hydrogen initially approaches the surface and must overcome a modest activation barrier to dissociate. After dissociation, the hydrogen atoms bind strongly to surface sites, leading to a significantly lower final energy. The accompanying atomic snapshots illustrate the structural change from molecular adsorption to dissociated H* species.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- They control surface hydrogen coverage during processing.\\n- They influence fluorine removal and surface regeneration.\\n- They affect reaction sequencing between precursor and co-reactant steps.\\n- They help optimize temperature windows for efficient ALD cycles.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF desorption, with an activation energy of approximately 1.17 eV.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The higher activation barrier indicates strong binding between hydrogen, fluorine, and the W-modified surface. These interactions stabilize surface-bound HF precursors, making desorption energetically more demanding. This reflects the strength of chemical bonding that must be overcome for HF to leave the surface.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_54_figure_4.jpg","caption":"Figure 4. Self-catalysis of aminosilane in $\\mathrm{SiO}_2$ PEALD. Reprinted with permission from ref 22. Copyright 2015 Royal Society of Chemistry.","id":"train/atomic-layer-deposition/simulation-usecase/54/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/54/figure_4","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/Guoyong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":845,"height":614,"image_format":"jpeg","image_sha256":"2f1a02a9f0656eb6e100ca4ed61cc5f9accc7a6003ca8dbe32af2896089eb69f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":841,"height":609}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the Gibbs free energy changes for SiH4 and BDMAS (A) with various transition states (TS) and products (P) at 298K.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | SiH4 | BDMAS (A) |\\n|---|---|---|\\n| R | 0.0 | - |\\n| Im1 | 3.4 | -0.1 |\\n| TS1 | 57.8 | 10.7 |\\n| Im2 | 0.1 | 3.2 |\\n| P1 | -9.4 | -7.5 |\\n| TS2 | 24.9 | 4.2 |\\n| Im3 | -35.4 | -15.7 |\\n| P2 | -42.6 | -22.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows the changes in Gibbs free energy for the half-reaction comparison between two aminosilanes: SiH4 and BDMAS.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For the overall pathway, the Gibbs free energy values decreases for both aminosilanes (SiH4 and BDMAS).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The highest Gibbs energy value is seen for SiH4 in the TS1 step.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Gibbs free energy is lower for BDMASthan for SiH4. For this reason, BDMAS is preferred for an aminosilane half-reaction at a low temperature.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_54_figure_5.jpg","caption":"Figure 5. Strong surface oxidation of $\\mathrm{O}_2$ plasma in $\\mathrm{SiO}_2$ PEALD. Reprinted with permission from ref 22. Copyright 2015 Royal Society of Chemistry.","id":"train/atomic-layer-deposition/simulation-usecase/54/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/54/figure_5","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/Guoyong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":845,"height":650,"image_format":"jpeg","image_sha256":"1d773f29c22418c1cffd72d27d984c86a2ea6b169becd8998ab5c330edb6cfd8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":839,"height":645}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the Gibbs free energy changes with various transition states (TS) and products (P) labeled with their respective energies in kcal/mol.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | B1 | B2 and B3 | B5 | B4 |\\n| --- | --- | --- | --- | --- |\\n| Substrate | 0.0 | 38.3 | 112.9 | 236.4 |\\n| Im1 | 8.5 | 43.3 | 117.8 | 151.9 |\\n| Im2 | - | -48.9 | 90.1 | - |\\n| TS1 | - | 57.2 | 140.1 | 201.9 |\\n| P1 | - | -150.8 | -23.3 | 38.5 |\\n| Im2 | - | -48.9 | 90.1 | - |\\n| TS2 | - | -2.1 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1O, 3O, 1O2 and 3O2 species are being studied.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Gibbs energy value increases for Im1 and then decreases again for Im2. After that, it decreases again before increasing strongly.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3O2 is the most stable species.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The barrier energy can be lower or higher depending on the spcies being used.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_54_figure_7.jpg","caption":"Figure 7. Dissociation reaction of BDEAS on OH-terminated $\\mathrm{Si}(001)$ surface. Reprinted with permission from ref 23. Copyright 2012 Elsevier.","id":"train/atomic-layer-deposition/simulation-usecase/54/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/54/figure_7","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/Guoyong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":845,"height":459,"image_format":"jpeg","image_sha256":"d6e836812c24a16ba63112c64d727ace3f72ce685f0b114e07bcfa20f3f4747b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":0,"width":839,"height":457}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates the energy profile of a chemical reaction involving BDEAS, its adsorption onto a surface, transition state (TS), and the formation of the DEAS group. The energy decreases from the initial state to the final one, associated with the formation of the DEAS group.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Energy [eV] | BDEAS adsorption | DEAS group formation |\\n| --- | --- | --- | \\n| 1.0 | - | - |\\n| 0.5 | - | - | \\n| 0.0 | - | - | \\n| -0.5 | -0.60 | - |\\n| -1.0 | - | -0.95 | \\n| -1.5 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Dissociation reactions of BDEAS were investigated using DFT calculations.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As shown in the figure, the energy barrier decreases as more negative values are reached through each stage.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The DEAS group formation has the lowest energy value.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Bond breaking between Si and N prevails during the reaction.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_56_5810357f97cb2a1911c467abe457850c4a19eaa5ce7780fa945b452adab219d7.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/56/5810357f97cb2a1911c467abe457850c4a19eaa5ce7780fa945b452adab219d7","sample_id":"atomic-layer-deposition/simulation-usecase/56/5810357f97cb2a1911c467abe457850c4a19eaa5ce7780fa945b452adab219d7","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/5810357f97cb2a1911c467abe457850c4a19eaa5ce7780fa945b452adab219d7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/5810357f97cb2a1911c467abe457850c4a19eaa5ce7780fa945b452adab219d7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/Bo Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"not_found"},"width":675,"height":339,"image_format":"jpeg","image_sha256":"21e14f180452baaf178b0ea1505a99fc922792174d9eaa3781b5edeefb1593a6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":674,"height":336}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_56_figure_7.jpg","caption":"Figure 7. Calculated energy diagram of the oxidation reactions.","id":"train/atomic-layer-deposition/simulation-usecase/56/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/56/figure_7","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/Bo Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":675,"height":342,"image_format":"jpeg","image_sha256":"290c1aaa2bc3744425c565d96ab6455f7fcf92d0f140d7648470a1b5ed6b18e9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":4,"width":669,"height":337}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_57_figure_3.jpg","caption":"Figure 3. Reaction pathway for the chemisorption of $\\mathrm{Ga(NMe_2)_3}$ precursor on the functionalized surface. Free energies $G$ are in $\\mathrm{kJ}\\mathrm{mol}^{-1}$ .","id":"train/atomic-layer-deposition/simulation-usecase/57/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/57/figure_3","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/C. Goehry et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":1252,"height":736,"image_format":"jpeg","image_sha256":"ddc097c431c20c80a401b3b47b2f0dbb9464fd7d8d59396b5fad4ceab7a46e14","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":2,"width":1243,"height":728}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a reaction pathway with energy changes (ΔG) at various steps (A01, A02, A03TS, A04, A05TS, A06, A07TS, A08) for the chemisorption of Ga(NMe2)3 precursor.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔG (kJ/mol) |\\n|---|---|\\n| A01 | 0.0 |\\n| A02 | +14.7 |\\n| A03TS | +42.2 |\\n| A04 | -106.0 |\\n| A05TS | -104.1 |\\n| A06 | -223.9 |\\n| A07TS | -201.7 |\\n| A08 | -231.9 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A01, A02, A03TS, A04, A05TS, A06, A07TS, A08 states are shown for the chemisorption of Gaa(NMe2)3.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Gibbs free energy increases continuously intil yhe A03TS, after which it decreases until the chemisorption of the precursor onto the surface at A08.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The latest step, associated with the chemisorption of the precursor onto the surface (A08), has the lowest Gibbs free energy value.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Ga is chemisorbed onto the surface, connecting three distant sulfur atoms.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_57_figure_5.jpg","caption":"Figure 5. Reaction pathways involving cooperation of two $\\mathrm{Ga(NMe_2)_3}$ precursors. Free energies are in $\\mathrm{kJ mol^{-1}}$ .","id":"train/atomic-layer-deposition/simulation-usecase/57/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/57/figure_5","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/C. Goehry et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":1197,"height":789,"image_format":"jpeg","image_sha256":"e7a62e99dc7f20bd5390d60d91d272d8e3e37cb37bbf9aaa65878f66f62c3a45","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":-1,"width":1189,"height":788}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a reaction scheme illustrating the energy changes (ΔG) associated with various chemical transformations of two Ga(NMe2)3 precursors.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔG (kJ/mol) |\\n|---|---|\\n| A04 | -106.0 |\\n| C01 | -128.1 |\\n| C02TS | -104.8 |\\n| C03 | -308.6 |\\n| C04TS | -302.6 |\\n| C05 | -364.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A04, C01, C02TS, C03, C04TS and C05 states are shown for the cooperation of the precursors.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Gibbs free energy decreases from A04 to C01, then increases up to C02TS. It then decreases trngly to C03, increases slightly to C04TS, and finally decreases again to C05.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the figure, the C02TS state has the highest Gibbs free energy value, at -104.8 kJmol-1.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As these two precursors are in close proximity, a cooperative effect can be observed. Therefore, they play an important role in the mechanism and Gibbs free energy values.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_57_figure_6.jpg","caption":"Figure 6. Reaction pathways involving the coreactant $\\mathrm{H}_2\\mathrm{S}$ regenerating the thiol end groups of the surface. Free energies are in $\\mathrm{kJ mol^{-1}}$ .","id":"train/atomic-layer-deposition/simulation-usecase/57/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/57/figure_6","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/C. Goehry et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":1403,"height":633,"image_format":"jpeg","image_sha256":"cb529a27da17d51f59a25877a058a3bd1bf62401e981f42f489ad23eabdb7583","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":1398,"height":630}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image depicts the reaction pathway involving the co-reactant H2S regenerating the thiol end groups of the surface. The ΔG values indicate the free energy changes associated with each step.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔG (kJ/mol) |\\n|---|---|\\n| A04 | -106.0 |\\n| D01TS | -55.0 |\\n| D02 | -167.5 |\\n| D03TS | -96.6 |\\n| D08TS | -160.9 |\\n| D04 | -254.9 |\\n| D05TS | -193.6 |\\n| D06 | -302.4 |\\n| D07TS | -144.8 |\\n| A06 | -231.3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A01, D01TS, D02, D03TS, D08TS, D04, D05TS, D06, D07TS and A08 states can be seen in the figure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Gibbs free energy decreases from -106.0 to -231.3 kJmol-1 for the overall reaction.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The second step shown: D01TS. It has a Gibbs energy value of -55.0 kJmol-1.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It can eliminate the remaining ligand and regenerate the thiol end groups on the surface.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_57_figure_8.jpg","caption":"Figure 8. Mechanisms explored for the key steps of the chemisorption of $\\mathrm{Ga(NMe_2)_3}$ precursor on the functionalized surface which contains an oxygen (hydroxy) impurity on the absorption site, followed by $\\mathrm{H}_2\\mathrm{S}$ injection. Free energies are in $\\mathrm{kJ mol^{-1}}$","id":"train/atomic-layer-deposition/simulation-usecase/57/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/57/figure_8","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/C. Goehry et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":1217,"height":856,"image_format":"jpeg","image_sha256":"5713ec66b439f80a5e8db7cb04e3e9bb5435b07bf39a56062199ea632e227c02","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":1207,"height":857}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the mechanisms that have been investigated for the key step in the chemisorption of the Ga(NMe2)3 precursor, which is follower by the injection of H2S.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔG (kJ/mol) |\\n|---|---|\\n| E014 | 0.0 |\\n| EO2TS | N/A |\\n| E03 | -82.9 |\\n| E04TS | -21.8 |\\n| E06TS | --79.3 |\\n| E05 | -148.6 |\\n| E07 | -195.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"E01, E02TS, E03, E04TS, E06TS, E05 and E07.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Gibbs free energy decreases from E01 to E03, followed by a slight increases for E06TS and a stong one for E04TS. Finally, the Gibbs free energy decreases significantly again for E05 and E07.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The E07 step, has the lowest Gibbs free energy value ( -195.4 kJmol-1).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen from the reaction pathway, oxygen, which is considered an impurity, can infuence the reaction.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_9_figure_5.jpg","caption":"Figure 5. Initial reaction path way and associated barriers in the case of HfCl4 based precursor ALD on $\\mathrm{SiO_2 / Si}$ .","id":"train/atomic-layer-deposition/simulation-usecase/9/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/9/figure_5","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/A. Dkhissi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":605,"height":403,"image_format":"jpeg","image_sha256":"89d8bb56d6032c2152eceebb6474a8775ba12ef147ffc0f5b11ce59b6844efcf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":601,"height":397}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the initial reaction pathway for an HfCl₄ precursor reacting with a hydroxylated SiO₂/Si surface during ALD. Several molecular states are displayed, each connected by arrows that represent energy changes. The values labeled as ΔE show how much energy is needed to move from one state to the next. The largest energy barrier is 0.88 eV, indicating the most difficult step in the reaction. Smaller barriers (0.48, 0.22, and 0.12 eV) correspond to easier steps where the precursor becomes more stable on the surface. Overall, the diagram explains how the precursor attaches and reacts during early ALD growth.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔE (eV) |\\n|---------------|---------|\\n| Step 1 | 0.48 |\\n| Step 2 | 0.88 |\\n| Step 3 | 0.22 |\\n| Step 4 | 0.12 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The pathway shows how HfCl₄ first approaches the surface, then reacts with surface hydroxyl groups step by step. Each step has an energy cost, shown by ΔE values. The sequence explains how the precursor changes shape, loses ligands, and forms stronger bonds with the surface. This helps explain how ALD growth starts at the atomic level.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 0.88 eV value is the highest energy barrier in the diagram. This means the system must overcome more resistance during this step compared to the others. It likely involves major changes, such as breaking strong bonds or rearranging the precursor, making it the slowest and most limiting step.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-They allow reactions at lower temperature.\\n, -They improve surface coverage.\\n, -They reduce nucleation delay\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_9_figure_7.jpg","caption":"Figure 7. Reaction path and predicted energetics for the reactions of $\\mathrm{H}_2\\mathrm{O}$ and $\\mathrm{SiO_2 - O - HfCl_3}$ and $\\mathrm{H}_2\\mathrm{O}$ and $\\mathrm{SiO_2 - O - ZrCl_3}$ .","id":"train/atomic-layer-deposition/simulation-usecase/9/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/9/figure_7","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/A. Dkhissi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":669,"height":345,"image_format":"jpeg","image_sha256":"1b61b89d953f12d070a58ad669d7a5298a231616478cf39b6bc03070b7e086bd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":4,"width":667,"height":339}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a reaction pathway for the reaction of water (H₂O) with surface-bound SiO₂–O–MCl₃ species, where M is either Hf or Zr. Several reaction states are shown using molecular images, and their relative energies (ΔE) are plotted along the vertical axis. Colored horizontal lines are used to compare Hf-based and Zr-based reactions. The figure highlights how the reaction steps and stability differ between Hf and Zr during the water half-cycle of ALD.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1) SiO₂–O–HfCl₃\\n, 2) SiO₂–O–ZrCl₃\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Zr-related energy levels are often slightly lower than the Hf-related ones. This suggests that Zr reactions may be more stable or easier to proceed under similar conditions. The figure allows this comparison by placing both reactions on the same energy scale.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, but with different energy levels.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Hf and Zr are both used in high-k dielectric films, but they may react differently with water. By comparing their reaction energies, researchers can decide which metal precursor may react more easily, need lower temperature, or give better film quality. This helps in choosing process conditions for ALD.\"}]}]"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_10_figure_5.jpg","caption":"Figure 5. Energy profiles computed by DFT method (PBE-D3) for the chemisorption of InCp on (a) hydrogenated silicon (Si-H termination) and (b) on hydroxylated silicon oxide (Si-OH termination).","id":"train/atomic-layer-deposition/simulation-usecase/10/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/10/figure_5","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"DFT-computed energy profile (PBE-D3) for InCp chemisorption on hydrogenated silicon (Si-H termination). The reaction is endothermic with a final energy of +0.31 eV and an activation barrier of 0.36 eV. Molecular snapshots show the InCp precursor, transition state, and the surface-bound In species with released cyclopentadiene (HCp).\"},{\"panel_id\":\"b\",\"text\":\"DFT-computed energy profile for InCp chemisorption on hydroxylated silicon oxide (Si-OH termination). The reaction is exothermic with a final energy of -0.30 eV and a lower activation barrier of 0.28 eV. The favorable thermodynamics and kinetics on Si-OH compared to Si-H explain the selectivity of In2O3:H ALD.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | Energy (eV) |\\n|---|---|\\n| Initial State | 0.00 |\\n| Transition State | 0.36 |\\n| Final State | 0.31 |\"},{\"panel_id\":\"b\",\"text\":\"| Reaction Step | Energy (eV) |\\n|---|---|\\n| Initial State | 0.00 |\\n| Transition State | 0.28 |\\n| Final State | -0.30 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Panel (a) shows a larger barrier (0.36 eV) and ends above the starting energy (~+0.31 eV), so it is less favorable thermodynamically. Panel (b) shows a smaller barrier (0.28 eV) and ends below the start (~−0.30 eV), so it is more favorable. Overall, (b) is both kinetically and thermodynamically more favorable than (a).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A negative final-state energy indicates a more stable bound/relaxed product state on that surface. Here, the oxygen-containing surface model in (b) stabilizes the final state much more than the oxygen-free surface in (a). This is consistent with the idea that surface termination strongly affects adsorption/reaction energetics and therefore nucleation behavior.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"y-axis: Energy (eV)\\n\\n, x-axis: Reaction coordinate (Å)\\n\\n, Black horizontal bars: discrete states (initial / intermediate / final)\\n\\n, Dashed line: the pathway connecting those states\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If one surface termination (like b) provides a lower barrier and an exothermic pathway, nucleation and growth will proceed there earlier and more reliably. Conversely, a higher-barrier, endothermic pathway (like a) can translate into a long nucleation delay and suppressed growth. That contrast is exactly what is exploited in area-selective ALD to obtain deposition on activated regions while inhibiting non-activated regions.\"}]}]","bbox":[{"panel_id":"b","x":0,"y":330,"width":510,"height":349},{"panel_id":"a","x":0,"y":2,"width":507,"height":329}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/10/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":511,"height":680,"image_format":"jpeg","image_sha256":"a4cea6fea5cde03de08ff0b232429ef00af2362fc048f929aa2af9c597c0ec80","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_15_fig2.jpg","caption":"Fig.2. e t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t h t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t","id":"train/atomic-layer-deposition/simulation-usecase/15/fig2","sample_id":"atomic-layer-deposition/simulation-usecase/15/fig2","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart illustrates the potential energy diagram plotting the energy changes (ΔE) in kJ/mol for two reaction mechanisms: one occurring on the same dimer (R1a/R2a) and one bridging adjacent dimers (R1b/R2b). The chart traces the reaction progress through chemisorption state (CS), transition states (TS) and physisorption states (PS) .\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction coordinate, a.u.| Species Label | ΔE, kJ/mol | \\n| --- | --- | --- |\\n| 1 | CS | -132.0 | \\n| 2 | TS(R1a) | -41.0 |\\n| 3 | PS(R1a) | -70.5 |\\n| 4 | Product(R1a) | -50.1 |\\n| 5 | TS (R2a) | 19.7 |\\n| 6 | PS(R2a) | 12.9 |\\n| 7 | Product(R2a) | 18.0 |\\n| 2 | TS(R1b) | -71.1 |\\n| 3 | PS(R1b) | -111.1 |\\n| 4 | Product(R1b) | -93.4 |\\n| 5 | TS(R2b) | -20.8 |\\n| 6 | PS(R2b) | -59.9 |\\n| 7 | Product(R2b) | - 39.9 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Product(R2a): 18.0 kJ/mol (highest ΔE → least stable), Product(R2b): -39.9 kJ/mol, Product(R1a): -50.1 kJ/mol, Product(R1b): -93.4 kJ/mol\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Reaction Product(R1b) → TS(R2b) is rate-determining (highest barrier).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Reaction CS → TS(R1a) is the slowest (highest barrier).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is more likely to move forward to form the final product rather than reversing. The energy barrier to proceed forward is 20.0 kJ/mol. The barrier to reverse back to the transition state is nearly double at 39.1 kJ/mol.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":1,"width":961,"height":365}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/fig2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/Chengxing Cui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":972,"height":372,"image_format":"jpeg","image_sha256":"2d99957543117823f98aebc675212643faba87df089f519c80db88a257eecd5e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_2_fig_2.jpg","caption":"Fig. 2. Reaction path and predicted energetics for reactions of $\\mathrm{HfCl_4}$ on the $\\mathrm{Si(OH)_3 - OH}$ $\\mathrm{Si(OSiH_3)_3 - OH}$ and $\\mathrm{Si_9O_3H_{12} - H - OH}$ surface sites. The corresponding energy values are also listed in Table 1.","id":"train/atomic-layer-deposition/simulation-usecase/2/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/2/fig_2","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a reaction pathway involving Si(OH)₃-OH, Si(OSiH₃)₃-OH, and Si₉O₃H₁₂-H-OH species, showing energy changes (ΔE) in kJ/mol.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| State | Si(OH)3-OH | Si(OSiH3)3-OH | Si9O3H12-H-OH |\\n| --- | --- | --- | --- |\\n| Chemisorption state | -59.8 | -68.9 | -73.1 |\\n| TS | 4.4 | -4.4 | -8.9 |\\n| Physisorption state | -38.5 | -51.6 | -56.0 |\\n| Product | -34.2 | -42.3 | -45.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows four states: chemisorption state, transition state, physisorption state and product formation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The chemisorption state, physisorption state and product formation have the lowest predicted energies, whereas the transition state ehxibits the highest.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the figure, the Si9O3H12-H-OH surface site produces a more stable chemisorbed complex, because it exhibits the lowest predicted energy value.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HCl4 adsorbs onto the Si-OH surface and then reacts through a four-center transition state. Next, a physisorbed HCl species is formed, and finally the product species is formed.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":0,"width":652,"height":900}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/Jie Ren et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":656,"height":900,"image_format":"jpeg","image_sha256":"15b431153b57fb6847ded74ad4de1078f04db52f006b36fdcf8214777d194b7c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_2_fig_3.jpg","caption":"Fig. 3. Reaction path and predicted energetics for reactions of $\\mathrm{H}_2\\mathrm{O}$ on the $\\mathrm{Si(OH)_3 - OHfCl_3}$ , $\\mathrm{Si(OSiH_3)_3 - OHfCl_3}$ and $\\mathrm{Si_9O_3H_{12} - H - OHfCl_3}$ surface sites. The corresponding energy values are also listed in Table 1.","id":"train/atomic-layer-deposition/simulation-usecase/2/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/2/fig_3","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a reaction pathway and predicted energetics for reactions of H2O on different surfaces sites.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| State | Si(OH)3-OHfCl3 | Si(OSiH3)3-OHfCl3 | Si9O3H12-H-OHfCl3 |\\n| --- | --- | --- | --- |\\n| Chemisorption state | -58.8 | -56.9 | -54.6 |\\n| TS | 19.9 | 22.3 | 24.3 |\\n| Physisorption state | -9.7 | -1.2 | -1.9 |\\n| Product | -4.9 | -1.0 | -0.7 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows four states: chemisorption state, transition state, physisorption and product formation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The chemisorption state shows the lowest predicted energy values. Then, the energy increases strongly for the transition state, followed by a decrease for the physisorption state, which has similar energy values to those of the products.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Si(OH)3-OHfCl3 because exhibits the lowest predicted energy value.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The reaction is weakly exothermic because its predicted energy values is 0.7 kJ/mol.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":653,"height":772}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/2/Jie Ren et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":656,"height":775,"image_format":"jpeg","image_sha256":"6837b9be17b60fcb0cd2e0a6de143a7a5c1a60a5ac62f8d52fac4879aa4e7da5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_23_fig_3.jpg","caption":"Fig 3. The variation of the relative energies about the distance between two hydroxyls at (a) Pt (111), (b) Pt (100) and (c) Pt edge sites. Note that the relative energies were calculated with the energy of a certain structure as energy zero $(EZ)$ , and the distance $(d_{\\mathrm{HO - OH}})$ between double hydroxyls was defined as the distance between the oxygen atoms.","id":"train/atomic-layer-deposition/simulation-usecase/23/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/23/fig_3","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"reaction energy profile diagram"},{"panel_id":"c","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":7,"width":466,"height":354},{"panel_id":"b","x":475,"y":6,"width":439,"height":353},{"panel_id":"c","x":919,"y":0,"width":437,"height":359}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/Jiaqiang Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1361,"height":361,"image_format":"jpeg","image_sha256":"3751615789e8425efc4c9c5fff177583cdc980cbccc550fc1a3354257a901c66","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_23_fig_5.jpg","caption":"Fig. 5 The decomposition pathways of DMAI on Pt (a) (111), (b) (100) and (c) edge sites with double hydroxyls.","id":"train/atomic-layer-deposition/simulation-usecase/23/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/23/fig_5","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"reaction energy profile diagram"},{"panel_id":"c","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":650,"height":367},{"panel_id":"b","x":0,"y":371,"width":648,"height":350},{"panel_id":"c","x":0,"y":724,"width":648,"height":353}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/Jiaqiang Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":650,"height":1081,"image_format":"jpeg","image_sha256":"47712ca0570967ad529afc099950bfd1c82ed6b8138af44857237b37317ef8ba","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_23_fig_6.jpg","caption":"Fig. 6 The hydrolyzation pathways on different Pt sites: (a) Pt(111), (b) Pt(100) and (c) Pt edge sites.","id":"train/atomic-layer-deposition/simulation-usecase/23/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/23/fig_6","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"reaction energy profile diagram"},{"panel_id":"c","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":4,"width":487,"height":556},{"panel_id":"b","x":493,"y":2,"width":437,"height":555},{"panel_id":"c","x":932,"y":0,"width":430,"height":559}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/Jiaqiang Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1364,"height":559,"image_format":"jpeg","image_sha256":"91d40790d9020c6b8826aa9ef5476fb063e06a8b4bc93765b33530b6f1858a46","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_10.jpg","caption":"Figure 10. Energetic overview of the disintegration of the $\\mathrm{Si}_{\\mathrm{SMI}} - \\mathrm{O}_{\\mathrm{surf}}$ bond with the Al precursors for (a) a single SMI and (b) a blocking layer density of $2.5 \\mathrm{SMIs} / \\mathrm{nm}^2$ within the A.1-O:123/45/6 SMI configuration. A depiction of several adsorbate structures is given in Figure S9. Total energy (dispersion contribution) with respect to the free reactants. All energies in kiloicules per mole.","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_10","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates the energy changes (ΔE) during the reaction of TMA and TEA with O1 of A.1-O:123 and A.1-O:13 at different stages: Adsorption (Ads), Transition State (TS), and Product (Prod).\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the energy changes (ΔE) during the reaction involving TMA and TEA with O4 and O1 of A.1-O:123/45/6 at different stages: Adsorption (Ads), Transition State (TS), and Product (Prod).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | TMA with O1 of A.1-O:123 | TEA with O1 of A.1-O:13 |\\n|---|---|---|\\n| Ads | -55 (-60) | -77 (-88) |\\n| TS | +38 (-65) | +28 (-101) |\\n| Prod | -92 (-59) | -147 (-86) |\"},{\"panel_id\":\"b\",\"text\":\"| Reaction Step | TMA with O4 of A.1-O:123/45/6 | TMA with O1 of A.1-O:123/45/6 | TEA with O1 of A.1-O:123/45/6 |\\n|---|---|---|---|\\n| Ads | -9 (-81) | -97 (-77) | -107 (-118) |\\n| TS | +110 (-118) | +93 (-86) | +83 (-83) |\\n| Prod | -18 (-133) | -101 (-94) | -134 (-86) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA's smaller methyl ligands allow it to access the O4 adsorption site (ΔE_ads = −9 kJ mol⁻¹) where bulkier TEA cannot adsorb, giving TMA an additional low-barrier decomposition channel (ΔE_A = 92 kJ mol⁻¹).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The values in parentheses represent the dispersion energy contribution (ΔE_disp) to the total energy at each state.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. TEA shows higher activation barriers and more endothermic reaction energies at the blocking layer, making Si_SMI−O_surf disintegration less favorable compared to TMA.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Activation barriers more than double when going from isolated SMI to the blocking layer. For TMA at O1, ΔE_A increases from 93 to 190 kJ mol⁻¹; for TEA at O1, from 105 to 217 kJ mol⁻¹. This demonstrates the \\\"reactivity reduction\\\" effect where the dense SMI layer destabilizes transition states through steric repulsion.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":556,"height":678},{"panel_id":"b","x":5,"y":677,"width":553,"height":652}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":561,"height":1330,"image_format":"jpeg","image_sha256":"e15245998b2dc5b0dbaa19e68ccf95e19f3b2c041bbb52bf2e7038f08af16b1e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_12.jpg","caption":"Figure 12. Overview of the activation energies $(\\Delta E_{\\mathrm{A}})$ of a the $\\mathrm{C} - \\mathrm{O}$ bond intersection and (b) the methoxy-SMI intersection reaction at an unreacted methoxy group for an isolated SMI at two full coverage SMI layer densities of 2.5 and $3.4\\mathrm{SMIs} / \\mathrm{nm}^2$","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_12","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows activation energies (ΔE_A) for the C-O bond intersection reaction of TMA and TEA at three SMI layer densities. Barriers increase with SMI density: TMA rises from 179 to 207 kJ/mol, TEA from 160 to 197 kJ/mol. All barriers exceed 150 kJ/mol, indicating this reaction is unlikely under typical ALD conditions.\"},{\"panel_id\":\"b\",\"text\":\"The chart shows activation energies for the methoxy-SMI intersection reaction with TMA, TEA, and H₂O. TMA and TEA barriers increase substantially with SMI density (99 to 173 kJ/mol for TMA; 115 to 203 kJ/mol for TEA), while H₂O barriers remain low (97 to 112 kJ/mol) regardless of SMI density.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Condition | TMA (Delta E_A, kJ/mol) | TEA (Delta E_A, kJ/mol) |\\n|---|---|---|\\n| Isolated SMI | 179 (-10) | 160 (-16) |\\n| 2.5 SMI per nm^2 | 206 (0) | 193 (-4) |\\n| 3.4 SMI per nm^2 | 207 (-5) | 197 (-8) |\"},{\"panel_id\":\"b\",\"text\":\"| Condition | TMA (Delta E_A, kJ/mol) | TEA (Delta E_A, kJ/mol) | H2O (Delta E_A, kJ/mol) |\\n|---|---|---|---|\\n| Isolated SMI | 99 (-17) | 115 (-10) | 97 (-7) |\\n| 2.5 SMI per nm^2 | 172 (-12) | 155 (-16) | 112 (-12) |\\n| 3.4 SMI per nm^2 | 173 (-25) | 203 (-38) | 106 (-6) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increase results from steric effects within the denser blocking layer. The transition states for these reactions require spatial rearrangement of groups around the SMI silicon atom. In a denser layer, displacing SMI substituents to accommodate the approaching precursor ligand invokes repulsive forces from neighboring SMIs. This \\\"reactivity reduction\\\" effect destabilizes the transition state, raising the activation barrier. The effect is more pronounced for bulkier precursors like TEA and for reactions requiring larger structural changes at the SMI center.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Each bar represents the activation energy for the C-O bond intersection reaction, with blue bars for TMA and yellow bars for TEA. Numbers in parentheses indicate the dispersion energy contribution to each barrier.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"H₂O activation energies (97 to 112 kJ/mol) are significantly lower and nearly independent of SMI density, while TMA and TEA barriers increase substantially with density, reaching 173 and 203 kJ/mol at 3.4 SMI/nm², respectively.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Key implications include: unreacted methoxy groups will convert to reactive hydroxyl groups during the first water pulse; these hydroxyl groups can then react with Al precursors in subsequent pulses; this may create SMI-bound Al fragments that negatively impact selectivity.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":318,"height":525},{"panel_id":"b","x":330,"y":2,"width":326,"height":526}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":658,"height":530,"image_format":"jpeg","image_sha256":"70f237bac267f34d1f43c17fc197cb13d6be3ee9a6e9a96c24071ab1176619f5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_4.jpg","caption":"Figure 4. (a) Energetic profile of the reaction of TMPS with the $\\mathrm{Si - OH}$ groups at O1, O3, and O2 of A.1. The total, activation, and reaction energies $(\\Delta E,\\Delta E_{\\mathrm{A}},$ and $\\Delta E_{\\mathrm{R}},$ respectively) are colored orange, and the respective Gibbs energies $(\\Delta G,\\Delta G_{\\mathrm{A}},$ and $\\Delta G_{\\mathrm{R}},$ respectively; $180^{\\circ}\\mathrm{C},$ 133.3 $\\times 10^{-6}$ bar) are colored green. Activation energies are stated relative to the previous minimum in brackets, while reaction energies include an already desorbed methanol. $(\\mathrm{b - h})$ Adsorption and reaction structures of TMPS in side view. The configurations of (b) PS, (c) SB, (d) DB, and (e) TB and the corresponding structures of (f) TS I, (g) TS II, and (h) TS III are shown. Selected bond lengths in angstroms.","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_4","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"molecular structure diagram"},{"panel_id":"c","label":"molecular structure diagram"},{"panel_id":"d","label":"molecular structure diagram"},{"panel_id":"e","label":"molecular structure diagram"},{"panel_id":"f","label":"molecular structure diagram"},{"panel_id":"g","label":"molecular structure diagram"},{"panel_id":"h","label":"molecular structure diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Reaction energy profile for TMPS forming the triply bonded (TB) configuration A.1-O:123 through three consecutive condensation reactions with silanols at O1, O3, and O2. Orange lines show total energies (ΔE) and green lines show Gibbs energies (ΔG) at ALD conditions (180°C, 133.3×10⁻⁶ bar). Values in parentheses are activation energies relative to the previous minimum. While ΔE values are endothermic for each step (+37, +40, +51 kJ/mol), entropic contributions from methanol release make all ΔG_R values exergonic (-45, -45, -15 kJ/mol).\"},{\"panel_id\":\"b\",\"text\":\"Precursor state (PS) structure showing TMPS hydrogen-bonded to a surface silanol. The Si-O distance of 3.777 Å and O-H distance of 1.007 Å indicate hydrogen bonding between the silanol and a methoxy group.\"},{\"panel_id\":\"c\",\"text\":\"Singly bonded (SB) configuration after first condensation, with one Si-O-Si linkage formed. Distance of 3.754 Å shows remaining silanol separation.\"},{\"panel_id\":\"d\",\"text\":\"Doubly bonded (DB) configuration after second condensation, with reduced inter-oxygen distance of 3.420 Å.\"},{\"panel_id\":\"e\",\"text\":\"Triply bonded (TB) configuration where TMPS is bonded to three surface silanols (O1, O2, O3), with Si-O bond lengths of 1.643-1.664 Å.\"},{\"panel_id\":\"f\",\"text\":\"Transition state I (TS I) showing pentavalent silicon at the TMPS center during the first condensation. The elongated Si-O bond (1.860 Å) and proton transfer (O-H = 1.209 Å) are characteristic features.\"},{\"panel_id\":\"g\",\"text\":\"Transition state II (TS II) for the second condensation, with similar pentavalent geometry.\"},{\"panel_id\":\"h\",\"text\":\"Transition state III (TS III) for the third condensation forming the TB configuration.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | Delta G (kJ/mol) | Delta E (kJ/mol) |\\n|---|---|---|\\n| PS | 30 | -93 |\\n| TS I | (+132) | (+142) |\\n| SB | -15 | -56 |\\n| TS II | (+96) | (+102) |\\n| DB | -60 | -16 |\\n| TS III | (+135) | (+129) |\\n| TB | -75 | 35 |\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"},{\"panel_id\":\"h\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Each condensation step releases a methanol molecule into the gas phase, creating a large positive entropy change. At ALD conditions (180°C), the TΔS term significantly contributes to the Gibbs energy, converting endothermic ΔE_R values (+37 to +51 kJ/mol) into exergonic ΔG_R values (-15 to -45 kJ/mol). This entropic driving force makes TB formation thermodynamically feasible despite the unfavorable electronic energies.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The second condensation (TS II) has the lowest barrier at 96-102 kJ/mol (ΔG_A = 96 kJ/mol, ΔE_A = 102 kJ/mol), compared to TS I (132-142 kJ/mol) and TS III (129-135 kJ/mol).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, for the A.1-O:123 configuration. At 180°C with typical dose and soak times of 5 minutes, barriers up to approximately 135-145 kJ/mol can achieve significant conversion (>5-50%). Since all three ΔG_A values (132, 96, and 135 kJ/mol) fall within this range, TB formation is kinetically accessible. However, this is only possible for favorable silanol arrangements like O:123; other TB configurations have prohibitively high energy penalties.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"All transition states show a pentavalent silicon atom at the TMPS center, with simultaneous Si-O bond formation to the surface oxygen and Si-O bond elongation to the departing methoxy group as it accepts a proton to form methanol.\"}]}]","bbox":[{"panel_id":"a","x":39,"y":0,"width":1358,"height":497},{"panel_id":"b","x":367,"y":797,"width":319,"height":242},{"panel_id":"c","x":725,"y":797,"width":319,"height":242},{"panel_id":"d","x":1082,"y":797,"width":316,"height":242},{"panel_id":"e","x":119,"y":521,"width":319,"height":244},{"panel_id":"f","x":546,"y":520,"width":319,"height":244},{"panel_id":"g","x":973,"y":520,"width":320,"height":244},{"panel_id":"h","x":8,"y":798,"width":320,"height":241}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":1398,"height":1039,"image_format":"jpeg","image_sha256":"7783acc8f1ffafed0a7c866773aac1974a9ec681fb4eef1561b626c7f281fc83","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_9.jpg","caption":"Figure 9. RBO opening reactions with TEA and $\\mathrm{H}_2\\mathrm{O}$ . (a) Reaction path of TEA from left to right: vacuum state, physisorption to the top of the blocking layer, intralayer diffusion barrier, adsorbed state at RBO, reaction barrier, and RBO reaction product. The reaction energies $(\\Delta E)$ are given with the contribution to the dispersion in parentheses $(\\Delta E_{\\mathrm{disp}})$ . (b) Reaction of a water molecule with the RBO of the A.2 model and the respective energy barrier. All energies in kJ $\\mathrm{mol}^{-1}$ .","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_9","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":3,"width":636,"height":550},{"panel_id":"b","x":3,"y":556,"width":643,"height":513}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":644,"height":1067,"image_format":"jpeg","image_sha256":"8c58edce7945c75f93b8cd083a1068890392bd464478061ea411c32ee8c1e526","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_36_figure_3.jpg","caption":"Figure 3. Reaction path for adsorption of TMA on the $\\mathrm{CH}_3$ -terminated surface of ODPA: (a, b) initial states of the TMA and $\\mathrm{CH}_3\\mathrm{CH}_2\\mathrm{CH}_3$ cluster models, respectively, (c) physisorption state, (d) transition state, and (e) chemisorption state between them.","id":"train/atomic-layer-deposition/simulation-usecase/36/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/36/figure_3","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The reaction scheme shows the adsorption pathway of TMA on a CH₃-terminated ODPA surface, with ΔE referenced to the initial state. A shallow minimum at −15.2 kcal/mol corresponds to physisorption, followed by a high-energy transition state at 44.1 kcal/mol. The final chemisorbed state lies slightly above the initial state at 2.5 kcal/mol. The large activation barrier relative to the adsorption well highlights the kinetic difficulty of chemisorption despite modest thermodynamic driving forces.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| State | ΔE (kcal/mol) |\\n|---------------------|----------------|\\n| Initial state | 0.0 |\\n| Physisorbed state | -15.2 |\\n| Transition state | 44.1 |\\n| Chemisorbed state | 2.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Crossing the transition state\\n, -Overcoming the large activation barrier\\n, -Enabling structural rearrangement required for chemisorption\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The physisorbed state is lower in energy (−15.2 kcal/mol) than the chemisorbed state (2.5 kcal/mol).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The transition state.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"When the molecular renderings are viewed alongside the energy diagram, the relative stabilities become apparent through the pairing of structural snapshots with their assigned energy levels. Lower-energy states, such as the physisorbed configuration, appear at downward positions in the diagram and are linked to compact but uncomplicated structures. The transition-state structure is associated with the highest plotted point, making its elevated energy value visually intuitive. The chemisorbed representation connects to an intermediate energy that sits above the initial state but well below the transition peak, completing the comparative picture without requiring any interpretive assumptions.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":5,"width":632,"height":478}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/Seunggi Seo et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":639,"height":486,"image_format":"jpeg","image_sha256":"62126cf2a8531a2dec9d2d1c57812b6db4405ee7dcefdcbcbf949a921855f637","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_42_fig_1.jpg","caption":"Fig. 1 Reaction between the Ti precursor and a water molecule. Black lines indicate reactant and product states, and the red lines indicate transition states. Yellow circles indicate transferred hydrogens. White, emerald, red, and gray spheres represent hydrogen, carbon, oxygen, and titanium atoms, respectively. Numbers are internal energies in the electron volt unit.","id":"train/atomic-layer-deposition/simulation-usecase/42/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/42/fig_1","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":3,"width":626,"height":493}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/Yeonchoo Cho et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":631,"height":497,"image_format":"jpeg","image_sha256":"519a6fbdd94133fe2c56247c084d9ad20c26a1a6f77f5b4d42a8a7de02079ea7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_10.jpg","caption":"Figure 10. ZPE-corrected PES for the two continuous hydroxylation reactions during the second half-reactions on the adjacent $-\\mathrm{OH}$ groups.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_10","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":670,"height":778}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":673,"height":780,"image_format":"jpeg","image_sha256":"8450a5a3d7cbf6e0ad13b4054efd8ce8d4087e6e52cd689ec2927467cb168950","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_12.jpg","caption":"Figure 12. ZPE-corrected PES for the reaction between $\\mathrm{TiCl_4}$ and the oxygen bridges sites. The labels \"a\" and \"d\" correspond to the structures shown in Figure 11.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_12","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_12","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":3,"width":672,"height":555}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":675,"height":561,"image_format":"jpeg","image_sha256":"60843d4f72333ba351dbd9ca39ba871ae002f05e849d43ff81faad0068fae124","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_14.jpg","caption":"Figure 14. ZPE-corrected PES for the $\\mathrm{H}_2\\mathrm{O} + \\mathrm{SiO}_2 - \\mathrm{Cl}^*$ reaction. The letters correspond to the structures shown in Figure 13.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_14","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_14","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":0,"width":672,"height":537}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":675,"height":539,"image_format":"jpeg","image_sha256":"edb6197e737163c929fbc13cdf0c21bbfddbd98c9f8e8c9cdd87e86d536ae151","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_3.jpg","caption":"Figure 3. ZPE-corrected potential energy surface for the $(\\mathrm{SiH_3O})_3$ - $\\mathrm{Si - OH^* + H_2O}$ reaction, calculated by using the MC2 model chemistry.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_3","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":666,"height":652}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":672,"height":656,"image_format":"jpeg","image_sha256":"5276106ce082d05af9c91af0f1d13620f3d450a22c4fbd476e80467e61f3134c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_5.jpg","caption":"Figure 5. ZPE-corrected PES for the surface diffusion of $\\mathrm{H}_2\\mathrm{O}$ and the $(\\mathrm{SiH_3O})_3\\mathrm{Si - O - TiCl_3^* + H_2O}$ reaction. RC1, RC2, and RC3 are the three different reactant complexes formed by the different adsorption modes of $\\mathrm{H}_2\\mathrm{O}$ . TS1, TS2, and TS3 are the transition states of the surface reaction. TS4 and TS5 are the transition states for surface diffusion. PC1 and PC2 are product complexes. PSS1 and PSS2 are the two product surface sites obtained through the different reaction pathways.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_5","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":1,"width":674,"height":571}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":675,"height":573,"image_format":"jpeg","image_sha256":"85cc43855ca97d3a80149712e2c90ebcf8018e1b095a37783f257e796fa25606","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_6.jpg","caption":"Figure 6. ZPE-corrected PES for the three continuous hydroxylation reactions on the isolated $-\\mathrm{OH}$ group. RC: reactant complex; TS: transition state; PC: product complex.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_6","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":5,"width":670,"height":583}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":675,"height":591,"image_format":"jpeg","image_sha256":"b79caad8e404b2235d15fa3a15c214fb53359f9a0cada3d7c46c0d555a0465de","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_figure_9.jpg","caption":"Figure 9. ZPE-corrected PES for the first half-reactions taking place on the adjacent hydrogen-bonded $-\\mathrm{OH}$ groups. The letters correspond to the structures shown in Figure 8.","id":"train/atomic-layer-deposition/simulation-usecase/44/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/44/figure_9","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":0,"width":671,"height":545}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":675,"height":547,"image_format":"jpeg","image_sha256":"2599aeeb5d2d43611a0b7b44a7a5411e47d861dfc95545196a3e3a0db88d2e47","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_45_fig_2.jpg","caption":"Fig. 2. Energy variation for the BDEAS reaction with $-\\mathrm{OH}$ on the Si (0 0 1) surface to produce a BDEAS group and $\\mathrm{H}_{2}$ . Perspective views are shown along the [1 00] direction. \"TS\" in this figure indicates a transition state.","id":"train/atomic-layer-deposition/simulation-usecase/45/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/45/fig_2","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image represents the energy variation for the bis-diethylaminosilane(BDEAS) reaction with -OH on the Si (0 0 1) surface resulting in BDEAS group and H2. The various conditions of the reaction state represented here are BDEAS away from the surface, BDEAS adsorption, transition state and BDEAS group formation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Energy [eV] | reaction state |\\n|----------------|--------------------|\\n| 0.0 | BDEAS away from surface |\\n| -0.43 | BDEAS adsorption | \\n| 1.60 | Transition state | \\n| -1.38 | BDEAS group formation |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"BDEAS away from the surface (Molecule located ~10 Å above the surface, no interaction)\\n\\nBDEAS adsorption on the surface (Initial interaction with surface atoms; partial bonding begins)\\n\\nTransition State (TS) (Highest-energy configuration with bond rearrangement and H-transfer)\\n\\nBDEAS group formation on the surface (Stable chemisorbed product formed on the surface, releasing H₂)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"BDEAS dissociates more easily on a clean Si surface because the exposed dangling bonds make adsorption strong and the reaction highly exothermic with low barriers. On a SiO₂ surface, the reaction is moderate, proceeding mainly through hydroxyl-assisted ligand exchange with intermediate activation energies. On the N/C/H-terminated surface, the reaction is more controlled and less reactive than clean Si, with lower adsorption strength and slightly higher barriers.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Variations in molecular structure such as more bulky ligands, stronger metal-ligand bonds, or greater steric hindrance generally increase the precursor's thermal stability but raise the activation energy for surface reactions. This leads to poorer adsorption, lower reactivity, and often requires higher deposition temperatures, which can compromise film conformality on high-aspect-ratio structures. Consequently, an optimal precursor balances sufficient volatility and surface mobility with moderate reactivity to enable low-temperature, self-limiting growth of dense, pure, and uniform thin films.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With a low activation barrier (≈0.43 eV) and large exothermicity (≈1.6 eV), the surface reaction should proceed at relatively low ALD temperatures, allowing operation near the lower end of the ALD window to improve precursor adsorption and utilization. Because the reaction is so exothermic there’s a heightened risk of non-self-limiting, CVD-like decomposition (increased GPC, carbon/nitrogen contamination, roughness), so use short precursor pulses, fast/extended purges (or inert gas blow), and milder co-reactants (or plasma control) to preserve self-limiting behavior. If controlled properly, this yields high precursor efficiency and excellent conformality, but poor control of pulse/purge timing or too-high temperature can increase defect density and reduce film quality for SiN/SiC.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":876,"height":463}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/Seung-Bin Baek et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":878,"height":469,"image_format":"jpeg","image_sha256":"a37040a2a0829cd1e3411431403927acbecdf35c29cd53959e257aa9d0a60128","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_45_fig_3.jpg","caption":"Fig. 3. Energy variation for the BDEAS reaction with $-\\mathrm{OH}$ on the Si (0 0 1) surface to produce a DEAS group and DEA. Perspective views are shown along the [1 00] direction. \"TS\" in this figure indicates a transition state.","id":"train/atomic-layer-deposition/simulation-usecase/45/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/45/fig_3","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line graph represents the energy variation for the bis-diethylaminosilane(BDEAS) reaction with -OH on the Si (0 0 1) surface resulting in DEAS group and DEA. The various conditions of the reaction state represented here are BDEAS away from the surface, BDEAS adsorption, transition state and DEAS group formation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Energy [eV] | reaction state |\\n|----------------|--------------------|\\n| 0.0 | BDEAS away from surface |\\n| -0.6 | BDEAS adsorption | \\n| 0.0 | Transition state | \\n| -0.95 | DEAS group formation |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Precursor approaches the OH-terminated surface.\\n\\nBDEAS adsorbs onto an –OH site (weakly at first).\\n\\nLigand exchange / H transfer occurs (proton from –OH transfers to a ligand).\\n\\nA bond breaks (TS) and a volatile fragment (DEA) leaves.\\n\\nDEAS group stays bound to the surface as the chemisorbed species; surface ready for next ALD step.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the energy is lower at the end compared to the start.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The energy is high at the TS state because bonds are partially broken and partially formed, making the structure unstable and requiring extra energy to reach that rearranged configuration.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Low activation energy enables low-temperature, self-limiting growth, ensuring excellent film conformality on complex 3D structures. The exothermic reaction releases energy, driving complete ligand removal and reducing defects, while the presence of a defined transition state indicates controlled, layer-by-layer growth, resulting in dense, uniform, and high-purity films with minimal impurities or pinholes.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":876,"height":470}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/45/Seung-Bin Baek et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":878,"height":475,"image_format":"jpeg","image_sha256":"5133f4af1d84a394421e103cd549054ada38642552d850f6bd8857e87b728d35","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_48_fig1.jpg","caption":"Fig.1 Comparison of Gibbs free energy profiles for $\\mathrm{SiH_4}$ and BDMAS half-reactions. The inset shows the structures of $\\mathbf{TS1}^{\\mathrm{SH4}}$ $\\mathbf{P1}^{\\mathrm{SH4}}$ $\\mathbf{TS2}^{\\mathrm{SH4}}$ $\\mathbf{TS1}^{\\mathbf{A}}$ $\\mathbf{P1}^{\\mathbf{A}}$ and $\\mathbf{TS2}^{\\mathbf{A}}$","id":"train/atomic-layer-deposition/simulation-usecase/48/fig1","sample_id":"atomic-layer-deposition/simulation-usecase/48/fig1","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a reaction scheme involving intermediate states (Im), reaction products (P) and transition states (TS) with their corresponding gibbs free energies in kcal/mol.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| State | Energy (kcal/mol) |\\n|---|---|\\n| R | 0.0 |\\n| Im1SiH4 | 3.4 |\\n| Im1A | -0.1 |\\n| TS1SiH4 | 57.8 |\\n| TS1A | 10.7 |\\n| Im2A | 3.2 |\\n| Im2SiH4 | 0.1 |\\n| P1A | -7.5 |\\n| P1SiH4 | -9.4 |\\n| TS2SiH4 | 24.9 |\\n| TS2A | 4.2 |\\n| Im3A | -15.7 |\\n| Im3SiH4 | -35.4 |\\n| P2A | -22.6 |\\n| P2SiH4 | -42.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The activation free energies of the two Si–O formation processes amount to 57.8 and 34.3 kcal/mol, respectively, which show that the silane half-reaction between the SiH4 and surface –OH groups without a catalyst at low temperature to be very difficult.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"By comparison of the activation free energies of the SiH4 and BDMAS half-reactions, it was found that the amino group of the aminosilane can remarkably catalyze the Si–O formation to generate SiO2. We refer to this catalytic aminosilane reaction involving the amino ligand as the self-catalysis\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The formation of one Si–O bond requires one amino group and one –OH group. Because the bis-aminosilane precursor has two amino ligands and the\\nstoichiometric ratio with respect to SiO2 is 1 : 2, BDMAS can produce highly pure and stoichiometric SiO2 films\"}]}]","bbox":[{"panel_id":"a","x":1,"y":1,"width":650,"height":532}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/48/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/48/images/fig1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/48/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/48/Guo-Yong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"48","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":655,"height":536,"image_format":"jpeg","image_sha256":"8f2ced15cdaa85fcde6c6f144c90ce0ecf00ec3ab02adadb60fbd4e4a9651409","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_48_fig2.jpg","caption":"Fig.2 Gibbs free energy profiles for the $\\Omega_{2}$ plasma half-reaction.","id":"train/atomic-layer-deposition/simulation-usecase/48/fig2","sample_id":"atomic-layer-deposition/simulation-usecase/48/fig2","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a reaction pathway with various transition states (TS) and intermediates (Im) along with their corresponding Gibbs free energy changes (ΔG298K) at 298 Kelvin for the O2 plasma half-reaction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔG298K (kcal/mol) |\\n|---|---|\\n| 3O2 | 0.0 |\\n| 1O2 | 38.3 |\\n| 2(3O) | 112.9 |\\n| 2(1O) | 236.4 |\\n| Im1B5 | 117.8 |\\n| Im1B4 | 151.9 |\\n| Im2B5 | 90.1 |\\n| Im1B2/3 | 43.3 |\\n| TS1B4 | 201.9 |\\n| TS1B1 | 140.1 |\\n| TS1B3 | 57.2 |\\n| Im1B1 | 8.5 |\\n| P1B4 | 38.5 |\\n| P1B5 | -23.3 |\\n| TS1B2 | 61.5 |\\n| Im2B3 | -48.9 |\\n| TS2B3 | 23.3 |\\n| P1B2 | -150.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1 3O2 \\n2 1O2 \\n3 2(3O) \\n4 2(1O)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The energy of the excited state of the oxygen molecule, 1O2, is 38.3 kcal/mol higher than that of the ground state. \\nThe energy of two oxygen radicals, 2(3O) , is 74.6 kcal/mol higher than that of 1O2 . The energy of the excited states of two oxygen radicals, 2(1O), is at the highest amounting to 236.4 kcal/ mol. The ground state of the oxygen molecule, 3O2 at 0, is the most stable.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The other oxygen radicals are active species and can oxidize the surface silane to form reactions (B2–B5). With 1O2 there are two pathways (B2 and B3) for oxidation of the silane.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":635,"height":640}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/48/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/48/images/fig2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/48/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/48/Guo-Yong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"48","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":639,"height":641,"image_format":"jpeg","image_sha256":"dd73b4ae0517181d6e0b0303eb9d6e39b50348a48dee5efc2939154ba60ca15a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_49_fig_2.jpg","caption":"Fig. 2 Calculated energy diagram of $\\mathsf{B}_2\\mathsf{H}_6$ decomposition on the TiN (001) surface.","id":"train/atomic-layer-deposition/simulation-usecase/49/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/49/fig_2","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates the energy levels of various boron-hydrogen complexes and their corresponding activation energies.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the molecular structures of boron-hydrogen complexes at different energy levels\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step (Species) | Energy (eV) |\\n|---|---|\\n| B2H6* | -0.06 |\\n| Transition State (B-B) | 1.11 |\\n| BH3* | -1.95 |\\n| Transition State (B-H) | 1.65 |\\n| BH2* | -0.66 |\\n| Transition State (B-H) | 1.75 |\\n| BH* | 0.79 |\\n| Transition State (B-H) | 1.83 |\\n| B* | 2.30 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dissociation of BH to B (the final B–H bond breaking step) presents the highest kinetic barrier, with an activation energy (Ea) of 1.83 eV.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The BH₃ species (adsorbed borane) is the most stable intermediate, corresponding to the global energy minimum of the profile at -1.95 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The final product state (B*) is located at 2.30 eV, which is significantly higher than the initial reactant state (B₂H₆*) at -0.06 eV. This large positive energy change indicates that the overall decomposition reaction on the TiN(001) surface is strongly endothermic and thermodynamically unfavorable, meaning the system prefers to remain in the intermediate BH₃ state rather than fully decomposing.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For effective ALD, the precursor must react completely to leave the desired material (Boron/Tungsten) on the surface while removing ligands. This profile shows that removing Hydrogen from Boron is energetically costly (uphill) and has high barriers, leading to a surface dominated by stable BH₃ intermediates or bare TiN rather than a reactive Boron layer. This explains why the TiN(001) orientation yields poor nucleation and low deposition rates compared to other surfaces.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":649,"height":485}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":656,"height":491,"image_format":"jpeg","image_sha256":"0826c647a4d6933e1d2b71bd3d8f87593c15ce2e2ab8ead1804d7318f209bc13","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_49_fig_4.jpg","caption":"Fig. 4 Calculated energy diagram of $\\mathrm{B}_2\\mathrm{H}_6$ decomposition on the Ti-terminated TiN (111) surface.","id":"train/atomic-layer-deposition/simulation-usecase/49/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/49/fig_4","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The energy diagram depicts the stepwise decomposition of B2H6 on Ti-terminated TiN (111), beginning with B2H6* adsorption at -4.46 eV and proceeding through sequential B-B and B-H bond cleavages. Activation energies range from 0.07 eV (BH3* to BH2*) to 0.93 eV (BH* to B*), with the final B-H dissociation being the rate-determining step. The overall reaction is exothermic, ending at -5.34 eV for adsorbed B*.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step (Species) | Energy (eV) |\\n|---|---|\\n| B2H6* | -4.46 |\\n| Transition State (B-B) | 0.74 |\\n| BH3* | -4.10 |\\n| Transition State (B-H) | 0.07 |\\n| BH2* | -4.88 |\\n| Transition State (B-H) | 0.61 |\\n| BH* | -5.00 |\\n| Transition State (B-H) | 0.93 |\\n| B* | -5.34 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dissociation of BH to B** (breaking the final B–H bond) presents the highest kinetic barrier, with an activation energy (E_a) of 0.93 eV.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The overall reaction is exothermic (thermodynamically favorable). The system starts at an energy of -4.46 eV for the adsorbed B₂H₆ species and ends at a lower energy of -5.34 eV for the final atomic Boron product. This \\\"downhill\\\" energy landscape indicates that the Ti-terminated TiN(111) surface spontaneously drives the precursor to decompose.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The BH* species (monoborane) represents a local minimum with an energy of -5.00 eV before the final dissociation step.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface facilitates the deposition. Since the reaction products are at a lower energy state than the reactants (exothermic by 0.88 eV) and the activation barriers are relatively surmountable, the surface efficiently converts the precursor into surface-bound Boron. This activity is crucial for creating a high-quality nucleation layer for subsequent Tungsten growth.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":654,"height":404}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":661,"height":411,"image_format":"jpeg","image_sha256":"53cfc13fef80607e1ddeaaca0162b1501b0df0eb04fef97534916f998d160e8c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_49_fig_6.jpg","caption":"Fig. 6 Calculated energy diagram of $\\mathrm{B}_2\\mathrm{H}_6$ decomposition on the N-terminated TiN (111) surface.","id":"train/atomic-layer-deposition/simulation-usecase/49/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/49/fig_6","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents the calculated potential energy profile for the decomposition of B₂H₆ on the N-terminated TiN(111) surface, showing energy changes at various stages.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step (Species) | Energy (eV) |\\n|---|---|\\n| B2H6* | -0.03 |\\n| Transition State (B-B & B-H) | 0.39 |\\n| BH2* + BH* + H* | -7.17 |\\n| BH* | -16.3 |\\n| Transition State (B-H) | 0.14 |\\n| B* | -19.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The final energy state on the N-terminated surface shown here is dramatically lower (-19.0 eV) compared to the Ti-terminated surface (-5.34 eV) and the (001) surface (+2.30 eV). This indicates that the thermodynamic driving force for B₂H₆ decomposition and Boron binding is significantly stronger on the N-terminated TiN(111) surface than on the other crystal orientations, making it the most favorable surface for deposition.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It indicates that the dissociation of the B–H bond at this stage proceeds spontaneously with zero activation energy. This implies that the intermediate species formed after the first step is kinetically unstable on this surface and immediately relaxes to the lower-energy state without requiring thermal activation.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both the B–B and B–H bonds dissociate simultaneously.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The extremely high reactivity and strong binding energy shown in the profile ensure that the B₂H₆ precursor decomposes efficiently to form a stable, dense Boron layer. Since this Boron layer acts as the reducing agent for the subsequent Tungsten (WF6) pulse, an efficient Boron deposition on this specific crystal orientation leads to improved Tungsten nucleation, reducing defects like seams or voids in memory device gates.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":0,"width":652,"height":447}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/49/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":661,"height":453,"image_format":"jpeg","image_sha256":"f42de77a543f68ef50938637c791ed5fe815bc8e6c64e9d05a0f9ac78f4b443f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_5_figure_3.jpg","caption":"Figure 3. DFT/PBE-D3-level energy profiles for the chemisorption of DEZ on (a) H-terminated Si and (b) OH-terminated $\\mathrm{SiO_2}$ . The zero corresponds to the physisorbed states: DEZ on H-terminated Si, $\\Delta E_{\\mathrm{p}} = -0.37 \\mathrm{eV}$ and on OH-terminated $\\mathrm{SiO_2}$ surface, $\\Delta E_{\\mathrm{p}} = -0.34 \\mathrm{eV}$ . Color code: light gray: carbon; light orange: silicon; red: oxygen; white: hydrogen; and blue: zinc.","id":"train/atomic-layer-deposition/simulation-usecase/5/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/5/figure_3","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figures illustrate the energy profile of DEZ (diethylzinc) adsorption on H-terminated Si and it shows the reaction coordinate with energy changes at specific points.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the energy profile on OH-terminated SiO2 surfaces.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Surface Termination | Initial Energy (eV) | Transition State (eV) | Final Energy (eV) |\\n|---------------------------|----------------------|-------------------------|--------------------|\\n| H-terminated Si (a) | 0.00 | 1.16 | -0.98 |\"},{\"panel_id\":\"b\",\"text\":\"| Surface Termination | Initial Energy (eV) | Transition State (eV) | Final Energy (eV) |\\n|---------------------------|----------------------|-------------------------|--------------------|\\n| OH-terminated SiO₂ (b) | 0.00 | 0.81 | -1.25 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both reactions are thermodynamically favored, however, an activation energy of 1.16 eV was calculated for reaction of DEZ on Si:H and and 0.81 eV for reaction on SiO2. The difference in energy barriers points toward a kinetically hindered surface reaction in the case of DEZ on an H-terminated surface. This may explain the difference in nucleation delay and the selectivity\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Presence of multiple reaction pathways, surface defects, or impurities may affect the deposition process\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. The chemisorption energy of DEZ on H-terminated Si is = -0.98 eV\\n, 2. The chemisorption energy of DEZ on OH-terminated SiO2 is = -1.25 eV\\n, 3. Zero physisorbed states in both cases\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":441,"height":339},{"panel_id":"b","x":472,"y":10,"width":372,"height":329}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/5/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":844,"height":339,"image_format":"jpeg","image_sha256":"adcc54d511e869fdf91d537ff5b6a9a890824ed67ba4fd34a609511f20cfa33e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_52_fig2.jpg","caption":"Fig.2 Calculated energy diagram of $\\mathrm{WF}_6$ decomposition on the N-terminated TiN (111) surface.","id":"train/atomic-layer-deposition/simulation-usecase/52/fig2","sample_id":"atomic-layer-deposition/simulation-usecase/52/fig2","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a reaction energy pathway for WF₆ decomposition on TiN. Each step represents breaking a W–F bond. Atomic images show the surface states at each step.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Multi-step.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The W–F dissociation step with an activation energy of approximately 3.45 eV.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The WF* intermediates represent partially decomposed species that are stabilized by bonding to the TiN surface. Their energies reflect how surface coordination lowers or raises the energetic cost of subsequent bond-breaking steps. Stronger surface interactions can stabilize intermediates, thereby modifying the height of later activation barriers and influencing the overall decomposition pathway.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-It identifies the rate-limiting step\\n-It predicts temperature requirements\\n-It helps compare precursor reactivity\\n-It guides precursor selection\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":646,"height":482}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":653,"height":489,"image_format":"jpeg","image_sha256":"44fd42ebf7fc46daa7c87f0ec180ce41e0aa8f3da735d0c2d86245f1648e3049","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_52_fig_4.jpg","caption":"Fig. 4 Calculated energy diagram of $\\mathrm{WF}_6$ decomposition on the B-covered N-terminated TiN (111) surface.","id":"train/atomic-layer-deposition/simulation-usecase/52/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/52/fig_4","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a calculated reaction energy pathway for the stepwise decomposition of WF₆ on a B-covered, N-terminated TiN (111) surface. The schematic profile shows successive W–F bond dissociation steps, including surface-bound intermediates (WF*) and transition states, with their corresponding energies indicated. Embedded atomic configurations illustrate the structural nature of key intermediates along the reaction pathway and highlight the stabilizing effect of boron-modified surface sites.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The diagram shows a sequence of energy barriers and stabilized intermediates corresponding to successive W–F bond-breaking events. Each increase in energy represents an activation barrier, while each decrease corresponds to a surface-bound intermediate stabilized by interactions with boron and nitrogen sites. This stepwise profile illustrates how WF₆ decomposes progressively rather than through a single concerted reaction.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The final surface-bound tungsten species (W*) at approximately −2.96 eV.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The stabilization of WF* intermediates indicates strong chemical interactions between partially decomposed WF₆ fragments and the modified TiN surface. Boron and nitrogen sites help anchor reaction fragments, lowering their energy relative to gas-phase species. This stabilization influences both reaction kinetics and the feasibility of further decomposition steps.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- It identifies rate-limiting reaction steps.\\n- It reveals the stability of surface-bound intermediates.\\n- It helps compare precursor behavior on different surface terminations.\\n- It guides surface engineering strategies for improved deposition efficiency.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":646,"height":459}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":650,"height":464,"image_format":"jpeg","image_sha256":"f942c3c6f9aa8781a8ae8d1da46d1bd4f35c61c32b563b1d341abcc196ab298f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_52_fig_6.jpg","caption":"Fig. 6 Calculated energy diagram of $\\mathrm{BF}_3$ desorption on the W-covered N-terminated TiN (111) surface.","id":"train/atomic-layer-deposition/simulation-usecase/52/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/52/fig_6","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a calculated reaction energy pathway for BF₃ desorption from a W-covered, N-terminated TiN (111) surface. The schematic profile shows the formation of BF* intermediates from surface-bound B* and F* species, followed by successive energy barriers leading to BF₃ desorption. Embedded atomic configurations illustrate the structural nature of key intermediates and the desorbed species along the reaction pathway.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The diagram shows that surface-bound boron and fluorine species first combine to form BF* intermediates through energetically activated steps. These intermediates are stabilized on the surface before overcoming additional barriers that lead to BF₃ formation and eventual desorption. The sequence of energy minima and barriers illustrates a stepwise reaction mechanism rather than a direct desorption process.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The step leading to BF₃ desorption with an activation energy of approximately 0.72 eV.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The stabilization of BF* intermediates indicates strong chemical bonding between boron-fluorine fragments and the W-modified TiN surface. These interactions lower the energy of intermediate states, making stepwise reaction pathways feasible. Such stabilization plays a key role in controlling both reaction kinetics and desorption behavior.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- It helps identify rate-limiting surface reactions.\\n- It informs the efficiency of fluorine removal from surfaces.\\n- It affects surface regeneration and impurity control.\\n- It guides optimization of precursor and co-reactant chemistry.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":4,"width":637,"height":502}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":639,"height":511,"image_format":"jpeg","image_sha256":"73e6ad994750bb3f0f94717fc31476d359a8aa9846351d9dd4596cf9e30340d5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_52_fig_7.jpg","caption":"Fig. 7 Calculated energy diagram of (a) $\\mathsf{H}_{2}$ dissociation on the W-covered N-terminated TiN (111) surface and (b) HF desorption on the H-saturated W-covered N-terminated TiN (111) surface.","id":"train/atomic-layer-deposition/simulation-usecase/52/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/52/fig_7","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"},{"panel_id":"b","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates the calculated reaction energy pathway for H₂ dissociation on a W-covered, N-terminated TiN (111) surface. The schematic profile shows the activation barrier associated with H–H bond cleavage and the stabilization of surface-bound H* species, with atomic configurations illustrating the initial and final states.\"},{\"panel_id\":\"b\",\"text\":\"The figure presents the calculated reaction energy pathway for HF desorption from an H-saturated, W-covered N-terminated TiN (111) surface. The diagram highlights the higher activation barrier for HF formation and desorption, along with the energetic state of surface-bound intermediates before desorption.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The energy pathway shows that molecular hydrogen initially approaches the surface and must overcome a modest activation barrier to dissociate. After dissociation, the hydrogen atoms bind strongly to surface sites, leading to a significantly lower final energy. The accompanying atomic snapshots illustrate the structural change from molecular adsorption to dissociated H* species.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- They control surface hydrogen coverage during processing.\\n- They influence fluorine removal and surface regeneration.\\n- They affect reaction sequencing between precursor and co-reactant steps.\\n- They help optimize temperature windows for efficient ALD cycles.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF desorption, with an activation energy of approximately 1.17 eV.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The higher activation barrier indicates strong binding between hydrogen, fluorine, and the W-modified surface. These interactions stabilize surface-bound HF precursors, making desorption energetically more demanding. This reflects the strength of chemical bonding that must be overcome for HF to leave the surface.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":467,"height":381},{"panel_id":"b","x":495,"y":4,"width":456,"height":349}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":956,"height":400,"image_format":"jpeg","image_sha256":"f79a27aef506335c9430948aee1785295845bcbc5c2fb4af617885b519f98945","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_54_figure_4.jpg","caption":"Figure 4. Self-catalysis of aminosilane in $\\mathrm{SiO}_2$ PEALD. Reprinted with permission from ref 22. Copyright 2015 Royal Society of Chemistry.","id":"train/atomic-layer-deposition/simulation-usecase/54/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/54/figure_4","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the Gibbs free energy changes for SiH4 and BDMAS (A) with various transition states (TS) and products (P) at 298K.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | SiH4 | BDMAS (A) |\\n|---|---|---|\\n| R | 0.0 | - |\\n| Im1 | 3.4 | -0.1 |\\n| TS1 | 57.8 | 10.7 |\\n| Im2 | 0.1 | 3.2 |\\n| P1 | -9.4 | -7.5 |\\n| TS2 | 24.9 | 4.2 |\\n| Im3 | -35.4 | -15.7 |\\n| P2 | -42.6 | -22.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows the changes in Gibbs free energy for the half-reaction comparison between two aminosilanes: SiH4 and BDMAS.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For the overall pathway, the Gibbs free energy values decreases for both aminosilanes (SiH4 and BDMAS).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The highest Gibbs energy value is seen for SiH4 in the TS1 step.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Gibbs free energy is lower for BDMASthan for SiH4. For this reason, BDMAS is preferred for an aminosilane half-reaction at a low temperature.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":841,"height":609}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/Guoyong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":845,"height":614,"image_format":"jpeg","image_sha256":"2f1a02a9f0656eb6e100ca4ed61cc5f9accc7a6003ca8dbe32af2896089eb69f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_54_figure_5.jpg","caption":"Figure 5. Strong surface oxidation of $\\mathrm{O}_2$ plasma in $\\mathrm{SiO}_2$ PEALD. Reprinted with permission from ref 22. Copyright 2015 Royal Society of Chemistry.","id":"train/atomic-layer-deposition/simulation-usecase/54/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/54/figure_5","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the Gibbs free energy changes with various transition states (TS) and products (P) labeled with their respective energies in kcal/mol.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | B1 | B2 and B3 | B5 | B4 |\\n| --- | --- | --- | --- | --- |\\n| Substrate | 0.0 | 38.3 | 112.9 | 236.4 |\\n| Im1 | 8.5 | 43.3 | 117.8 | 151.9 |\\n| Im2 | - | -48.9 | 90.1 | - |\\n| TS1 | - | 57.2 | 140.1 | 201.9 |\\n| P1 | - | -150.8 | -23.3 | 38.5 |\\n| Im2 | - | -48.9 | 90.1 | - |\\n| TS2 | - | -2.1 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1O, 3O, 1O2 and 3O2 species are being studied.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Gibbs energy value increases for Im1 and then decreases again for Im2. After that, it decreases again before increasing strongly.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3O2 is the most stable species.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The barrier energy can be lower or higher depending on the spcies being used.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":839,"height":645}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/Guoyong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":845,"height":650,"image_format":"jpeg","image_sha256":"1d773f29c22418c1cffd72d27d984c86a2ea6b169becd8998ab5c330edb6cfd8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_54_figure_7.jpg","caption":"Figure 7. Dissociation reaction of BDEAS on OH-terminated $\\mathrm{Si}(001)$ surface. Reprinted with permission from ref 23. Copyright 2012 Elsevier.","id":"train/atomic-layer-deposition/simulation-usecase/54/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/54/figure_7","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates the energy profile of a chemical reaction involving BDEAS, its adsorption onto a surface, transition state (TS), and the formation of the DEAS group. The energy decreases from the initial state to the final one, associated with the formation of the DEAS group.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Energy [eV] | BDEAS adsorption | DEAS group formation |\\n| --- | --- | --- | \\n| 1.0 | - | - |\\n| 0.5 | - | - | \\n| 0.0 | - | - | \\n| -0.5 | -0.60 | - |\\n| -1.0 | - | -0.95 | \\n| -1.5 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Dissociation reactions of BDEAS were investigated using DFT calculations.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As shown in the figure, the energy barrier decreases as more negative values are reached through each stage.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The DEAS group formation has the lowest energy value.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Bond breaking between Si and N prevails during the reaction.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":0,"width":839,"height":457}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/Guoyong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":845,"height":459,"image_format":"jpeg","image_sha256":"d6e836812c24a16ba63112c64d727ace3f72ce685f0b114e07bcfa20f3f4747b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_56_5810357f97cb2a1911c467abe457850c4a19eaa5ce7780fa945b452adab219d7.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/56/5810357f97cb2a1911c467abe457850c4a19eaa5ce7780fa945b452adab219d7","sample_id":"atomic-layer-deposition/simulation-usecase/56/5810357f97cb2a1911c467abe457850c4a19eaa5ce7780fa945b452adab219d7","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":2,"width":674,"height":336}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/5810357f97cb2a1911c467abe457850c4a19eaa5ce7780fa945b452adab219d7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/5810357f97cb2a1911c467abe457850c4a19eaa5ce7780fa945b452adab219d7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/Bo Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"not_found"},"width":675,"height":339,"image_format":"jpeg","image_sha256":"21e14f180452baaf178b0ea1505a99fc922792174d9eaa3781b5edeefb1593a6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_56_figure_7.jpg","caption":"Figure 7. Calculated energy diagram of the oxidation reactions.","id":"train/atomic-layer-deposition/simulation-usecase/56/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/56/figure_7","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":4,"width":669,"height":337}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/Bo Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":675,"height":342,"image_format":"jpeg","image_sha256":"290c1aaa2bc3744425c565d96ab6455f7fcf92d0f140d7648470a1b5ed6b18e9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_57_figure_3.jpg","caption":"Figure 3. Reaction pathway for the chemisorption of $\\mathrm{Ga(NMe_2)_3}$ precursor on the functionalized surface. Free energies $G$ are in $\\mathrm{kJ}\\mathrm{mol}^{-1}$ .","id":"train/atomic-layer-deposition/simulation-usecase/57/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/57/figure_3","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a reaction pathway with energy changes (ΔG) at various steps (A01, A02, A03TS, A04, A05TS, A06, A07TS, A08) for the chemisorption of Ga(NMe2)3 precursor.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔG (kJ/mol) |\\n|---|---|\\n| A01 | 0.0 |\\n| A02 | +14.7 |\\n| A03TS | +42.2 |\\n| A04 | -106.0 |\\n| A05TS | -104.1 |\\n| A06 | -223.9 |\\n| A07TS | -201.7 |\\n| A08 | -231.9 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A01, A02, A03TS, A04, A05TS, A06, A07TS, A08 states are shown for the chemisorption of Gaa(NMe2)3.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Gibbs free energy increases continuously intil yhe A03TS, after which it decreases until the chemisorption of the precursor onto the surface at A08.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The latest step, associated with the chemisorption of the precursor onto the surface (A08), has the lowest Gibbs free energy value.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Ga is chemisorbed onto the surface, connecting three distant sulfur atoms.\"}]}]","bbox":[{"panel_id":"a","x":7,"y":2,"width":1243,"height":728}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/C. Goehry et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":1252,"height":736,"image_format":"jpeg","image_sha256":"ddc097c431c20c80a401b3b47b2f0dbb9464fd7d8d59396b5fad4ceab7a46e14","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_57_figure_5.jpg","caption":"Figure 5. Reaction pathways involving cooperation of two $\\mathrm{Ga(NMe_2)_3}$ precursors. Free energies are in $\\mathrm{kJ mol^{-1}}$ .","id":"train/atomic-layer-deposition/simulation-usecase/57/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/57/figure_5","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a reaction scheme illustrating the energy changes (ΔG) associated with various chemical transformations of two Ga(NMe2)3 precursors.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔG (kJ/mol) |\\n|---|---|\\n| A04 | -106.0 |\\n| C01 | -128.1 |\\n| C02TS | -104.8 |\\n| C03 | -308.6 |\\n| C04TS | -302.6 |\\n| C05 | -364.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A04, C01, C02TS, C03, C04TS and C05 states are shown for the cooperation of the precursors.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Gibbs free energy decreases from A04 to C01, then increases up to C02TS. It then decreases trngly to C03, increases slightly to C04TS, and finally decreases again to C05.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the figure, the C02TS state has the highest Gibbs free energy value, at -104.8 kJmol-1.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As these two precursors are in close proximity, a cooperative effect can be observed. Therefore, they play an important role in the mechanism and Gibbs free energy values.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":-1,"width":1189,"height":788}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/C. Goehry et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":1197,"height":789,"image_format":"jpeg","image_sha256":"e7a62e99dc7f20bd5390d60d91d272d8e3e37cb37bbf9aaa65878f66f62c3a45","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_57_figure_6.jpg","caption":"Figure 6. Reaction pathways involving the coreactant $\\mathrm{H}_2\\mathrm{S}$ regenerating the thiol end groups of the surface. Free energies are in $\\mathrm{kJ mol^{-1}}$ .","id":"train/atomic-layer-deposition/simulation-usecase/57/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/57/figure_6","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image depicts the reaction pathway involving the co-reactant H2S regenerating the thiol end groups of the surface. The ΔG values indicate the free energy changes associated with each step.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔG (kJ/mol) |\\n|---|---|\\n| A04 | -106.0 |\\n| D01TS | -55.0 |\\n| D02 | -167.5 |\\n| D03TS | -96.6 |\\n| D08TS | -160.9 |\\n| D04 | -254.9 |\\n| D05TS | -193.6 |\\n| D06 | -302.4 |\\n| D07TS | -144.8 |\\n| A06 | -231.3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A01, D01TS, D02, D03TS, D08TS, D04, D05TS, D06, D07TS and A08 states can be seen in the figure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Gibbs free energy decreases from -106.0 to -231.3 kJmol-1 for the overall reaction.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The second step shown: D01TS. It has a Gibbs energy value of -55.0 kJmol-1.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It can eliminate the remaining ligand and regenerate the thiol end groups on the surface.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":1,"width":1398,"height":630}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/C. Goehry et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":1403,"height":633,"image_format":"jpeg","image_sha256":"cb529a27da17d51f59a25877a058a3bd1bf62401e981f42f489ad23eabdb7583","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_57_figure_8.jpg","caption":"Figure 8. Mechanisms explored for the key steps of the chemisorption of $\\mathrm{Ga(NMe_2)_3}$ precursor on the functionalized surface which contains an oxygen (hydroxy) impurity on the absorption site, followed by $\\mathrm{H}_2\\mathrm{S}$ injection. Free energies are in $\\mathrm{kJ mol^{-1}}$","id":"train/atomic-layer-deposition/simulation-usecase/57/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/57/figure_8","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the mechanisms that have been investigated for the key step in the chemisorption of the Ga(NMe2)3 precursor, which is follower by the injection of H2S.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔG (kJ/mol) |\\n|---|---|\\n| E014 | 0.0 |\\n| EO2TS | N/A |\\n| E03 | -82.9 |\\n| E04TS | -21.8 |\\n| E06TS | --79.3 |\\n| E05 | -148.6 |\\n| E07 | -195.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"E01, E02TS, E03, E04TS, E06TS, E05 and E07.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Gibbs free energy decreases from E01 to E03, followed by a slight increases for E06TS and a stong one for E04TS. Finally, the Gibbs free energy decreases significantly again for E05 and E07.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The E07 step, has the lowest Gibbs free energy value ( -195.4 kJmol-1).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen from the reaction pathway, oxygen, which is considered an impurity, can infuence the reaction.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":1207,"height":857}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/57/C. Goehry et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"57","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:image_caption"},"width":1217,"height":856,"image_format":"jpeg","image_sha256":"5713ec66b439f80a5e8db7cb04e3e9bb5435b07bf39a56062199ea632e227c02","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_9_figure_5.jpg","caption":"Figure 5. Initial reaction path way and associated barriers in the case of HfCl4 based precursor ALD on $\\mathrm{SiO_2 / Si}$ .","id":"train/atomic-layer-deposition/simulation-usecase/9/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/9/figure_5","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the initial reaction pathway for an HfCl₄ precursor reacting with a hydroxylated SiO₂/Si surface during ALD. Several molecular states are displayed, each connected by arrows that represent energy changes. The values labeled as ΔE show how much energy is needed to move from one state to the next. The largest energy barrier is 0.88 eV, indicating the most difficult step in the reaction. Smaller barriers (0.48, 0.22, and 0.12 eV) correspond to easier steps where the precursor becomes more stable on the surface. Overall, the diagram explains how the precursor attaches and reacts during early ALD growth.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔE (eV) |\\n|---------------|---------|\\n| Step 1 | 0.48 |\\n| Step 2 | 0.88 |\\n| Step 3 | 0.22 |\\n| Step 4 | 0.12 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The pathway shows how HfCl₄ first approaches the surface, then reacts with surface hydroxyl groups step by step. Each step has an energy cost, shown by ΔE values. The sequence explains how the precursor changes shape, loses ligands, and forms stronger bonds with the surface. This helps explain how ALD growth starts at the atomic level.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 0.88 eV value is the highest energy barrier in the diagram. This means the system must overcome more resistance during this step compared to the others. It likely involves major changes, such as breaking strong bonds or rearranging the precursor, making it the slowest and most limiting step.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-They allow reactions at lower temperature.\\n, -They improve surface coverage.\\n, -They reduce nucleation delay\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":601,"height":397}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/A. Dkhissi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":605,"height":403,"image_format":"jpeg","image_sha256":"89d8bb56d6032c2152eceebb6474a8775ba12ef147ffc0f5b11ce59b6844efcf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_9_figure_7.jpg","caption":"Figure 7. Reaction path and predicted energetics for the reactions of $\\mathrm{H}_2\\mathrm{O}$ and $\\mathrm{SiO_2 - O - HfCl_3}$ and $\\mathrm{H}_2\\mathrm{O}$ and $\\mathrm{SiO_2 - O - ZrCl_3}$ .","id":"train/atomic-layer-deposition/simulation-usecase/9/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/9/figure_7","subset":"reaction-energy-profile-diagram","split":"train","classification":[{"panel_id":"a","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a reaction pathway for the reaction of water (H₂O) with surface-bound SiO₂–O–MCl₃ species, where M is either Hf or Zr. Several reaction states are shown using molecular images, and their relative energies (ΔE) are plotted along the vertical axis. Colored horizontal lines are used to compare Hf-based and Zr-based reactions. The figure highlights how the reaction steps and stability differ between Hf and Zr during the water half-cycle of ALD.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1) SiO₂–O–HfCl₃\\n, 2) SiO₂–O–ZrCl₃\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Zr-related energy levels are often slightly lower than the Hf-related ones. This suggests that Zr reactions may be more stable or easier to proceed under similar conditions. The figure allows this comparison by placing both reactions on the same energy scale.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, but with different energy levels.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Hf and Zr are both used in high-k dielectric films, but they may react differently with water. By comparing their reaction energies, researchers can decide which metal precursor may react more easily, need lower temperature, or give better film quality. This helps in choosing process conditions for ALD.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":4,"width":667,"height":339}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/A. Dkhissi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"reaction energy profile diagram","caption_source":"content.json:img_caption"},"width":669,"height":345,"image_format":"jpeg","image_sha256":"1b61b89d953f12d070a58ad669d7a5298a231616478cf39b6bc03070b7e086bd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/reaction-scheme/test/metadata.jsonl b/subsets/reaction-scheme/test/metadata.jsonl index 4cff78b2fbd0a6ce25ba973154b431cc9a88e089..f418543ef1722a6c5a946a48046a8ae29fb17488 100644 --- a/subsets/reaction-scheme/test/metadata.jsonl +++ b/subsets/reaction-scheme/test/metadata.jsonl @@ -1,31 +1,31 @@ -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_1.jpg","caption":"FIG. 1. (Color online) Schematic representation of thermal ALD and plasma-assisted ALD. During the co-reactant step of the cycle (the $2^{\\mathrm{nd}}$ half-cycle), the surface is exposed to a reactant gas or vapor such as $\\mathrm{NH_3}$ or $\\mathrm{H}_2\\mathrm{O}$ or to species generated by a plasma.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_1","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":672,"height":578,"image_format":"jpeg","image_sha256":"525efe3ff691cf3734ea5ef7bdab960114723fc74fcd7c3af137cce8116d26e3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":5,"width":666,"height":167},{"panel_id":"b","x":2,"y":191,"width":668,"height":386}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_3_figure_12.jpg","caption":"Figure 12. Schematic of each step in the proposed mechanism.","id":"test/atomic-layer-deposition/experimental-usecase/3/figure_12","sample_id":"atomic-layer-deposition/experimental-usecase/3/figure_12","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/Hausmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":586,"height":700,"image_format":"jpeg","image_sha256":"7d26ed180a3d1d11bde18a155f7188009ad1194e50700c10e3b74db6ec0ab782","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":586,"height":700}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_61_figure_7.jpg","caption":"Figure 7. Schematic representation of the proposed reaction mechanisms during the ALD of Co using $\\mathrm{NH}_3$ or $\\mathrm{H}_2 / \\mathrm{N}_2$ plasma as the co-reactant. During the precursor subcycle $(^{\\circ}\\mathrm{A}^{\\prime})$ , $\\mathrm{CoCp}_2$ binds to the surface, accompanied by the release of $\\mathrm{HCp}$ . The site to which $\\mathrm{CoCp}_2$ chemisorbs is indicated as \"X\" because it remains to be identified. In the co-reactant subcycle $(^{\\circ}\\mathrm{B}^{\\prime})$ , the $\\mathrm{NH}_{x,x< 3}$ species from the plasma cause the release of $\\mathrm{HCp}$ and fragments thereof and lead to the formation of $\\mathrm{NH}_y$ surface groups. $\\mathrm{NH}_y$ with the subscript $y$ is used to indicate the distinction from $\\mathrm{NH}_x$ species in the plasma.","id":"test/atomic-layer-deposition/experimental-usecase/61/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/61/figure_7","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/Vos et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"61","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":428,"height":336,"image_format":"jpeg","image_sha256":"ca96c848e03f8e3bd687397c1ee4c9ded436e0bbdf35e15601726d08150bad6c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":438,"height":336}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_33_figure_7.jpg","caption":"Figure 7. DFT-predicted structures of the lowest-energy (left) physisorbed and (right) chemisorbed species and their relative energies from the TMA adsorption on pristine graphene, oxygenated graphene (i.e., graphene oxide, GO), and hydrogenated graphene (HG).","id":"test/atomic-layer-deposition/simulation-usecase/33/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/33/figure_7","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":587,"height":1739,"image_format":"jpeg","image_sha256":"29ea46c3372517ec1af6b502ff781b9c147f5d3ee6d23af99cb38089c9c4e1a3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":11,"y":3,"width":564,"height":1719}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image presents a series of reaction schemes illustrating the interaction between various forms of graphene (pristine, epoxydized, hydroxylated, and GO mixture) with AlMe₃, along with the corresponding energy changes in electron volts (eV).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Surface Type | E_ads before (eV) | E_ads after (eV) |\\n|---|---|---|\\n| Pristine Graphene | -0.53 | 1.84 |\\n| Epoxydized GO | -1.70 | -7.37 |\\n| Hydroxylated GO | -0.45 | -2.67 |\\n| GO Mixture | -0.61 | -5.33 |\\n| HG Stirrup Conformation | -0.54 | -2.23 |\\n| HG Honeycomb Conformation | -0.44 | -1.39 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The left structure is the lowest energy physisorbed TMA configuration, and the right structure is the lowest energy chemisorbed configuration for that surface model.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Epoxidized GO: chemisorption energy about minus 7.37 eV, strongest binding shown.\\n\\nGO mixture: chemisorption energy about minus 5.33 eV. \\n\\nHydroxylated GO: chemisorption energy about minus 2.67 eV.\\n\\nHydrogenated graphene stirrup: chemisorption energy about minus 2.23 eV.\\n\\nHydrogenated graphene honeycomb: chemisorption energy about minus 1.39 eV.\\n\\nPristine graphene: chemisorption energy plus 1.84 eV, unfavorable.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The paper attributes the stronger binding to the availability of oxygen p orbitals on the functionalized surface that can interact with the Al center in TMA. Pristine graphene has a chemically stable sp2 carbon lattice, so TMA only physisorbs weakly and chemisorption is energetically unfavorable. This difference explains why the calculated chemisorption energies are strongly negative on GO models but positive on pristine graphene.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure shows that chemisorption of TMA is predicted to be unfavorable on pristine graphene but favorable on oxygenated and hydrogenated graphene models, which implies a lower nucleation barrier for Al2O3 ALD after functionalization. The paper connects this to the experimentally observed uniform Al2O3 coverage after plasma treatments, versus nonuniform growth on pristine graphene. It also notes that hydrogenated graphene binds TMA less strongly than GO, consistent with a longer nucleation delay than GO but still improved adsorption relative to pristine graphene.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_33_figure_8.jpg","caption":"Figure 8. Schematic overview of the energetically most favorable TMA chemisorption mechanisms on pristine and functionalized graphene based on the PBE-D3-level calculations.","id":"test/atomic-layer-deposition/simulation-usecase/33/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/33/figure_8","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"},{"panel_id":"d","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":637,"height":492,"image_format":"jpeg","image_sha256":"8d9e484a49a9db7c868697a90bf977122735adadc1f85d151a1ae67a43695877","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":1,"width":326,"height":255},{"panel_id":"b","x":337,"y":1,"width":296,"height":253},{"panel_id":"c","x":4,"y":258,"width":325,"height":224},{"panel_id":"d","x":339,"y":249,"width":296,"height":234}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic of the most favorable TMA chemisorption pathway on pristine graphene, which the calculations find to be unfavorable overall and consistent with poor Al2O3 nucleation on pristine graphene.\"},{\"panel_id\":\"b\",\"text\":\"Schematic of the most favorable TMA chemisorption on epoxidized graphene oxide, showing strong TMA binding via oxygen sites and formation of a volatile byproduct during dissociative adsorption.\"},{\"panel_id\":\"c\",\"text\":\"Schematic of the most favorable TMA chemisorption on hydroxylated graphene oxide, proceeding by ligand exchange with methane formation as the volatile byproduct.\"},{\"panel_id\":\"d\",\"text\":\"Schematic of the most favorable TMA chemisorption on hydrogenated graphene, where chemisorption proceeds via methane formation and is preceded by hydrogen removal as H2, which helps restore the graphene bonding configuration.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA is trimethylaluminum, the Al2O3 ALD precursor. CH4 and H2 indicate gaseous reaction products released during dissociative chemisorption on functionalized graphene surfaces.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The calculations attribute stronger adsorption on graphene oxide to the availability of oxygen p orbitals that can interact with the Al center in TMA. This provides more favorable binding configurations than the chemically stable sp2 carbon lattice of pristine graphene. As a result, oxygen functionalization is predicted to reduce the nucleation delay and support more uniform Al2O3 growth.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The paper highlights that the most plausible pathway on hydrogenated graphene involves removal of surface hydrogen, including H2 release, followed by methane formation during TMA chemisorption. This mechanism is predicted to clean hydrogen functionalities from the surface and recover the graphene bonding configuration, supporting reversibility. In the paper’s interpretation, this is a key reason why H2 plasma functionalization can enable ALD nucleation while still allowing recovery of graphene electrical properties after ALD and annealing.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Pristine graphene: adsorption is predicted to be kinetically and thermodynamically unfavorable, with the preferred dissociative route involving methyl transfer and a high barrier. \\n\\nEpoxidized graphene oxide: strong binding via oxygen sites, with ethane release predicted as the preferred pathway for the ordered epoxy model.\\n\\nHydroxylated graphene oxide: chemisorption proceeds via methane release, similar to other OH terminated oxides.\\n\\nHydrogenated graphene: chemisorption is most likely via methane release but is preceded by H2 release to facilitate binding.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_37_fig_4.jpg","caption":"Fig. 4. ALD reaction portrait for optimum growth of alumina from TMA and $\\mathrm{H}_2\\mathrm{O}$ , subject to the constraints of $[\\mathrm{Me}] = 1 / \\mathrm{cell}$ and $[\\mathrm{H}] = 2 / \\mathrm{cell}$ .","id":"test/atomic-layer-deposition/simulation-usecase/37/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/37/fig_4","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/Simon D. Elliott.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":425,"height":405,"image_format":"jpeg","image_sha256":"0b404cd821a6bf133062acf1710234534a93f2f5af78763a2fcf6bc617843389","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":425,"height":405}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The ALD reaction sequence for alumina growth from TMA and H₂O under optimal conditions, showing that one TMA molecule reacts per surface cell ([Me] = 1/cell) and two H atoms per cell ([H] = 2/cell), leading to CH₄ desorption and regeneration of the hydroxylated surface. The figure highlights the stoichiometry and steric constraints governing monolayer formation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Description|\\n|-----------|\\n|ALD reaction portrait for optimum growth of alumina from TMA and H₂O, subject to the constraints of [Me] = 1/cell and [H] = 2/cell|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. CH₄ is desorbed during the adsorption of TMA on the hydroxylated surface.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"[Me] = 1 per cell, whereas [H] = 2 per cell, indicating that more H atoms are involved in surface regeneration than TMA methyl groups in adsorption.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Steric hindrance at the surface prevents deposition of a full monolayer of Al₂O₃. Even under optimal conditions, only about half a monolayer per cycle can form because the adsorbed TMA molecules occupy space that limits additional adsorption. This directly impacts the growth rate, limiting it to approximately 0.75 monolayer per cycle or 1.6 Å per cycle, slightly lower than the theoretical maximum predicted from the mechanistic coverage of [Me] and [H].\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hydroxylated substrate (gibbsite-like), Adsorbed TMA molecules ([Me]), CH₄ desorbed molecules, Surface Al(CH₃) capping groups, Hydroxyl groups restored by H₂O pulse ([H])\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_37_fig_5.jpg","caption":"Fig. 5. ALD reaction portraits showing the effect of lower coverage: (a) $\\mathrm{CH}_3$ coverage at half the optimum level; (b) $\\mathrm{H}$ (or $\\mathrm{OH}$ ) coverage at half the optimum level.","id":"test/atomic-layer-deposition/simulation-usecase/37/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/37/fig_5","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/Simon D. Elliott.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":881,"height":403,"image_format":"jpeg","image_sha256":"d4e0f43a446c14947dad0521e899b25fa38a1bed37d9f43d9a987d1034503553","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":5,"width":438,"height":397},{"panel_id":"b","x":456,"y":6,"width":424,"height":397}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"CH₃ coverage set at half of the optimum level, resulting in a lower growth rate of 0.8 Å/cycle, while OH coverage remains unchanged, illustrating the effect of reduced CH₃ coverage on ALD growth.\"},{\"panel_id\":\"b\",\"text\":\"H (or OH) coverage at half the optimum level, leading to a non-linear reduction in growth rate to 1.1 Å/cycle and a surface saturated with a mixture of Al(CH₃) and Al(CH₃)₂, illustrating the effect of reduced H/OH coverage on ALD kinetics.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Species | Coverage | Growth Rate (Å/cycle) | Notes |\\n|---|---|---|---|\\n| [CH₃] | 0.5 × optimum | 0.8 | Reduced TMA adsorption lowers growth rate |\\n| OH | optimum | – | Hydroxyl coverage unchanged |\"},{\"panel_id\":\"b\",\"text\":\"| Species | Coverage | Growth Rate (Å/cycle) | Notes |\\n|---|---|---|---|\\n| H | 0.5 × optimum | 1.1 | Partial dehydroxylation affects growth rate non-linearly |\\n| Al(CH₃)/Al(CH₃)₂ | mixed | – | Surface saturated mixture at end of TMA pulse |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"With H (or OH) coverage at half the optimum, the growth rate decreases to 1.1 Å/cycle, which is less than the drop observed with half CH₃ coverage (0.8 Å/cycle).\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Deviations from optimum surface coverage significantly affect ALD kinetics. Lower CH₃ coverage limits the number of TMA molecules that can adsorb, directly reducing the growth rate. Reduced H or OH coverage alters the surface termination non-linearly, partially limiting reactions during the H₂O pulse and producing a mixed surface of Al(CH₃) and Al(CH₃)₂. These effects result in slower growth and highlight the importance of maintaining sufficient surface coverage for efficient and predictable ALD film deposition.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"[CH₃] – half optimum in 5a, reduces growth rate, OH – unchanged in 5a, H – half optimum in 5b, affects growth rate non-linearly, Al(CH₃)/Al(CH₃)₂ – surface mixture in 5b\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_37_fig_6.jpg","caption":"Fig. 6. ALD reaction portrait showing the effect of incomplete H-transfer (e.g. at low temperature) so that not all Me or H is consumed each cycle. In the example shown here, only half of the available H is allowed to react to yield $\\mathrm{CH_4}$ , compared to the optimum case (Fig. 4).","id":"test/atomic-layer-deposition/simulation-usecase/37/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/37/fig_6","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/Simon D. Elliott.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":422,"height":389,"image_format":"jpeg","image_sha256":"163d5b7a36eab86d421900d0a5451f45ad539496af2eba47b83ca434f52e6534","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":422,"height":389}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 6 illustrates the effect of incomplete H-transfer on the ALD growth of alumina. Due to kinetic limitations at low temperatures, only half of the available H reacts during the H₂O pulse, resulting in partial CH₄ desorption. As a result, some CH₃ and OH remain on the surface ([CH₃] > 6.6 µmol/m², [OH] > 13 µmol/m²), which can lead to contamination and a reduced growth rate of approximately 0.8 Å/cycle, compared to the optimum conditions shown in Fig. 4.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Species | Coverage (µmol/m²) | Notes |\\n|---|---|---|\\n| [CH₃] | >6.6 | Some unreacted CH₃ remains due to incomplete H-transfer |\\n| [OH] | >13 | Hydroxyl groups not fully consumed, may cause film contamination |\\n| H reacted | 50% | Only half of available H reacts to produce CH₄, compared to optimum |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The growth rate drops to approximately 0.8 Å/cycle, which is about half of the optimum rate.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Kinetically-limited ALD at low temperatures leads to incomplete H-transfer, leaving unreacted CH₃ and OH on the surface. This residual material can contaminate the growing alumina film and reduce the effective growth rate to about 0.8 Å/cycle. Such limitations are important for controlling film uniformity, purity, and overall deposition efficiency, especially when precise monolayer growth is required.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"[CH₃] (residual methyl groups), [OH] (residual hydroxyl groups), H (only 50% reacts to form CH₄)\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_47_figure_3.jpg","caption":"Figure 3. ALD of $\\mathrm{SiO}_2$ and $\\mathrm{Si}_3\\mathrm{N}_4$ . The proposed mechanistic steps for reactive chemisorption of an $\\mathrm{SiH}_2\\mathrm{X}_2$ precursor and desorption of functional group X via proton transfer from an Si-Y-H functionalized surface $(Y = 0$ , NH or N). Reproduced with permission.[69] Copyright 2014, American Chemical Society.","id":"test/atomic-layer-deposition/simulation-usecase/47/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/47/figure_3","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/Simon D. Elliott et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":878,"height":650,"image_format":"jpeg","image_sha256":"c11c0e93f20fbd68fb4c6b7ddc02505f758ba014bb716cecb73fc9ef8e45033c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":878,"height":650}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_1_figure_2.jpg","caption":"Figure 2. (a) (d) Schematic representation of an ALEt process. Figure 2(a) is an incoming substrate, Figure 2(b) shows an absorbed layer on the surface atoms due to gaseous/chemical precursor exposure, Figure 2(c) shows exposure of the modified surface layer to ligands such that the $\\mathbf{M}^*$ L molecule can be removed either by temperature or pumping down to low pressure, Figure 2(d).","id":"test/atomic-layer-etching/experimental-usecase/1/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/1/figure_2","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/Atomic Layer Etching An Industry Perspective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1006,"height":522,"image_format":"jpeg","image_sha256":"c0059d0468622292ea4a1d25246be178d83746f1403e3f2d43554cdbfc7784bd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1006,"height":522}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_18_fig_4.jpg","caption":"FIG. 4. Schematic of proposed reaction mechanism for $\\mathrm{Al}_2\\mathrm{O}_3$ ALE showing (a) Sn(acac)2 reaction and (b) HF reaction. Reprinted with permission from Lee and George, ACS Nano 9, 2061 (2015). Copyright 2015, American Chemical Society.","id":"test/atomic-layer-etching/experimental-usecase/18/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/18/fig_4","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":683,"height":559,"image_format":"jpeg","image_sha256":"7775d39cdcb61ab00f51e817912ef140d61bbd5113bbb66267ed49188f1d32c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":5,"width":332,"height":507},{"panel_id":"b","x":399,"y":14,"width":280,"height":502}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figures illustrate a two-step process involving the removal of SnF ligands through ligand exchange\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the subsequent fluorination of Al2O3 surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Description | Reactants/Conditions | Products/Surface State |\\n|---------------------------|----------------------------------|---------------------------------------|\\n|Removal step: Ligand Exchange | Surface: Al₂O₃ with Al–F species; Sn precursor (O–Sn–O ligand) | Sn species bonded to surface; Al–F partially removed |\\n| Reaction | O–Sn–O ligand exchanges with Al–F groups | Formation of O–SnF species on surface |\"},{\"panel_id\":\"b\",\"text\":\"| Description | Reactants/Conditions | Products/Surface State |\\n|---------------------------|----------------------------------|---------------------------------------|\\n| Modification Step: Fluorination | Surface: Al₂O₃ with Sn species; HF introduced | Surface becomes fluorinated (Al–F groups restored); H₂O byproduct |\\n| Reaction | HF reacts with Sn species | Sn removed; Al–F coverage increased |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Proposed reaction mechanism for Al2O3 ALE shows\\n (a)Sn(acac)2 reaction \\n(b) HF reaction\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"One of the widely studied implementations of thermal isotropic ALE at constant wafer temperature is etching of Al2O3 with alternating HF (for instance in the form of HF-pyridine) and Sn (acac)2 gases.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The metal oxide surface is converted into metal fluoride by HF in the modification step. The removal of aluminum atoms follows via a ligand-exchange reaction. Sn(acac)2 exchanges its acac ligands with the fluorine at the AlF3\\nsurface. This results in the formation of volatile SnF(acac) and Al (acac)3 reaction products. The term “ligand-exchange” comes from this reaction mechanism. Modification and removal steps require two sequential or parallel surface reactions to convert Al2O3 first into AlF3 and then into Al(acac)3.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_2ab6d9ea5f683368cca09771bd0bd59fdf5868c7fdd52d07eb7ab61ab31ad5bf.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/20/2ab6d9ea5f683368cca09771bd0bd59fdf5868c7fdd52d07eb7ab61ab31ad5bf","sample_id":"atomic-layer-etching/experimental-usecase/20/2ab6d9ea5f683368cca09771bd0bd59fdf5868c7fdd52d07eb7ab61ab31ad5bf","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/2ab6d9ea5f683368cca09771bd0bd59fdf5868c7fdd52d07eb7ab61ab31ad5bf.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/2ab6d9ea5f683368cca09771bd0bd59fdf5868c7fdd52d07eb7ab61ab31ad5bf.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":447,"height":242,"image_format":"jpeg","image_sha256":"c55fe71cbb53e584c49aef3d9ca8e97d06993cabc57261ad1e0348f47db36aab","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":42,"y":10,"width":405,"height":120},{"panel_id":"b","x":42,"y":137,"width":403,"height":104}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_1.jpg","caption":"Fig. 1. Schematic for CoO thermal ALE using sequential Hacac and $\\mathrm{O_3}$ exposures based on: (A) Hacac removal of CoO as $\\mathrm{Co(acac)_2}$ and $\\mathrm{H_2O}$ ; and (B) $\\mathrm{O_3}$ cleaning of carbon species remaining after Hacac exposure.","id":"test/atomic-layer-etching/experimental-usecase/21/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_1","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":980,"height":597,"image_format":"jpeg","image_sha256":"4616fe0abeca703e7ade51ce13e2c221069052ec5ebda35b4bb791d5983d88a6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":7,"width":882,"height":261},{"panel_id":"b","x":8,"y":288,"width":891,"height":306}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_14.jpg","caption":"Fig. 14. Schematic for thermal CoO ALE using sequential Hacac and $\\mathrm{O_3}$ exposures based on results from this study. First cleaning step: (B') $\\mathrm{O_3}$ cleans residual carbon from initial h-CoO film and oxidizes film to $\\mathrm{Co_3O_4}$ . During steady state ALE: (A) Hacac reduction of $\\mathrm{Co_3O_4}$ to $\\mathrm{CoO}$ , removal of $\\mathrm{CoO}$ as $\\mathrm{Co(acac)_2}$ and $\\mathrm{H_2O}$ , and buildup of carbon species; and (B) $\\mathrm{O_3}$ cleaning of carbon species remaining after Hacac exposure and oxidation of $\\mathrm{CoO}$ to $\\mathrm{Co_3O_4}$ .","id":"test/atomic-layer-etching/experimental-usecase/21/fig_14","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_14","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_14.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1003,"height":942,"image_format":"jpeg","image_sha256":"fb952d982079d6cd4f029b00922b312c9162a3df8dc8cc5d690ddaa1bd1bc845","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":3,"width":920,"height":933}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_f0620e7ba6ebd825cf4c00630f1afabb30001aee49622b4c69dc720e3f189d35.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/25/f0620e7ba6ebd825cf4c00630f1afabb30001aee49622b4c69dc720e3f189d35","sample_id":"atomic-layer-etching/experimental-usecase/25/f0620e7ba6ebd825cf4c00630f1afabb30001aee49622b4c69dc720e3f189d35","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/f0620e7ba6ebd825cf4c00630f1afabb30001aee49622b4c69dc720e3f189d35.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/f0620e7ba6ebd825cf4c00630f1afabb30001aee49622b4c69dc720e3f189d35.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":542,"height":392,"image_format":"jpeg","image_sha256":"5e09aae9bd9e804b92bccc07cfa01b0c3e3cdf322e99030b876f1abcfba1b037","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":46,"y":7,"width":492,"height":117},{"panel_id":"b","x":55,"y":139,"width":487,"height":120},{"panel_id":"c","x":63,"y":274,"width":478,"height":115}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_3_3867828aabdcebeb2d14ad2a2fb95a1a072eb6ee61ceaf985a0a438c2fdc01d5.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/3/3867828aabdcebeb2d14ad2a2fb95a1a072eb6ee61ceaf985a0a438c2fdc01d5","sample_id":"atomic-layer-etching/experimental-usecase/3/3867828aabdcebeb2d14ad2a2fb95a1a072eb6ee61ceaf985a0a438c2fdc01d5","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"multi spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/images/3867828aabdcebeb2d14ad2a2fb95a1a072eb6ee61ceaf985a0a438c2fdc01d5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/images/3867828aabdcebeb2d14ad2a2fb95a1a072eb6ee61ceaf985a0a438c2fdc01d5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/Atomic Layer Etching Mechanism of MoS2 for Nanodevices.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":397,"height":375,"image_format":"jpeg","image_sha256":"dad470a8c4333c82d17e9f48e96756dc65ff77314d4dc9beea67ac3f6da74dc0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":16,"y":9,"width":372,"height":200},{"panel_id":"b","x":16,"y":235,"width":190,"height":135},{"panel_id":"c","x":209,"y":235,"width":186,"height":135}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates the step-by-step transformation of a pristine bilayer structure through the adsorption of chlorine atoms and subsequent exposure to argon gas, leading to a monolayer structure.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the intensity of spectral peaks at various wavenumbers for different states of the material, including pristine bilayer, Cl adsorption, and monolayer structures. Where the intensities decrease upon plasma exposure.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the intensity of spectral peaks at various wavenumbers for different states of the material, including pristine bilayer, Cl adsorption, and monolayer structures. Where the intensities increase upon plasma exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | Description |\\n|---|---|\\n| Pristine (bilayer) | Initial state with bilayer structure |\\n| Cl adsorption | Chlorine atoms adsorb onto the surface |\\n| Ar 30 s | Argon gas exposure for 30 seconds |\\n| Ar 60 s | Argon gas exposure for 60 seconds |\\n| Ar 120 s | Argon gas exposure for 120 seconds |\\n| Pristine (monolayer) | Final state with monolayer structure |\"},{\"panel_id\":\"b\",\"text\":\"| Wavenumber (cm⁻¹) | Intensity (a.u.) Pristine Bi|Intensity (a.u.) Cl ads|Intensity (a.u.) 30s Ar|Intensity (a.u.) 60s Ar|Intensity (a.u.) 120s Ar|Intensity (a.u.) Pristine Mono|\\n|---|---|---|---|---|---|---|\\n| 370 | - |- |- |- |- |- |\\n| 383 | Peak 1*I |Peak 1*I |Peak 0.9*I |Peak 0.6*I |Peak 0.5*I |Peak 0.4*I |\\n| 390 | - |- |- |- |- |- |\\n| 405 | Peak 1*I |Peak 1*I |Peak 0.9*I |Peak 0.6*I |Peak 0.5*I |Peak 0.4*I |\\n| 420 | - |- |- |- |- |- |\"},{\"panel_id\":\"c\",\"text\":\"| Wavenumber (cm⁻¹) | Intensity (a.u.) Pristine Bi|Intensity (a.u.) Cl ads|Intensity (a.u.) 30s Ar|Intensity (a.u.) 60s Ar|Intensity (a.u.) 120s Ar|Intensity (a.u.) Pristine Mono|\\n|---|---|---|---|---|---|---|\\n| 580 | - |- |- |- |- |- |\\n| 620 | Peak 0.6*I |Peak 0.6*I |Peak 0.8*I |Peak 0.9*I |Peak 1*I |Peak 1*I |\\n| 665 | Peak 0.6*I |Peak 0.6*I |Peak 0.8*I |Peak 0.9*I |Peak 1*I |Peak 1*I |\\n| 720 | - |- |- |- |- |- |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plasma exposure takes the longest. This is likely as the plasma is at a high pressure. Also modification usually does not take more than a few seconds.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At low pressures, ions are more accelerated towards the substrate table and can also damage the underlaying monolayer for to long exposures.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes there is a dependence. With the removal of half of the material, the intensity is also dropping. This indicates a proportional relation.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_3_figure_4.jpg","caption":"Figure 4. (a) Raman spectra of the CVD bilayer $\\mathrm{MoS}_2$ before and after Cl adsorption and those after the $\\mathrm{Ar^{+}}$ ion exposure from 15 to $200~\\mathrm{s}$ b) Raman peak intensities of $\\mathrm{E}_{1\\mathrm{g}}^{1}$ and $\\mathrm{A_{1g}}$ of $\\mathrm{MoS}_2$ c) Peak positions of $\\mathrm{E}_{1\\mathrm{g}}^{1}$ and $\\mathrm{A_{1g}}$ of $\\mathrm{MoS}_2$ and the gap distance between $\\mathrm{E}_{1\\mathrm{g}}^{1}$ and $\\mathrm{A_{1g}}$ (d) Raman and (e) photoluminescence (PL) spectra of the exfoliated bilayer $\\mathrm{MoS}_2$ and the exfoliated monolayer $\\mathrm{MoS}_2$ flakes. The Raman and PL spectra of the exfoliated bilayer $\\mathrm{MoS}_2$ flake before and after Cl adsorption and those after the $\\mathrm{Ar^{+}}$ ion exposure from 30 to $120~\\mathrm{s},$ exhibiting the formation of the monolayer $\\mathrm{MoS}_2$ from the bilayer $\\mathrm{MoS}_2,$ are also shown. (f) Drain currents vs gate voltages of the bottom-gate $\\mathrm{MoS}_2$ field effect transistors (FETs) that were fabricated with the exfoliated bilayer $\\mathrm{MoS}_2,$ the exfoliated monolayer $\\mathrm{MoS}_2,$ and the exfoliated bilayer $\\mathrm{MoS}_2$ after one cycle of $\\mathrm{MoS}_2$ ALE with $120~\\mathrm{s}$ (monolayer etching condition) and $200~\\mathrm{s}$ (overexposure with $\\mathrm{Ar^{+}}$ ion) of $\\mathrm{Ar^{+}}$ ion exposure. The inset shows an optical microscopic image of the bottom-gate $\\mathrm{MoS}_2$ FET that was fabricated with the exfoliated bilayer $\\mathrm{MoS}_2$","id":"test/atomic-layer-etching/experimental-usecase/3/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/3/figure_4","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multi-axis chart"},{"panel_id":"e","label":"stacked spectra chart"},{"panel_id":"f","label":"multi spectra chart"},{"panel_id":"g","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/Atomic Layer Etching Mechanism of MoS2 for Nanodevices.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1386,"height":1475,"image_format":"jpeg","image_sha256":"1f6ec70600ccce0581dbe29e07504c8aa5f16c82d1530b6dabae50a86544ac77","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":153,"y":3,"width":1102,"height":741},{"panel_id":"b","x":11,"y":769,"width":438,"height":338},{"panel_id":"c","x":457,"y":773,"width":421,"height":333},{"panel_id":"d","x":884,"y":771,"width":500,"height":323},{"panel_id":"e","x":10,"y":1124,"width":438,"height":348},{"panel_id":"f","x":455,"y":1123,"width":423,"height":346},{"panel_id":"g","x":883,"y":1124,"width":455,"height":344}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_10_2bb1b8b089e23dcdad71089750c800df825e033193b4e23369dd76e74f948c0a.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/10/2bb1b8b089e23dcdad71089750c800df825e033193b4e23369dd76e74f948c0a","sample_id":"atomic-layer-etching/simulation-usecase/10/2bb1b8b089e23dcdad71089750c800df825e033193b4e23369dd76e74f948c0a","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/2bb1b8b089e23dcdad71089750c800df825e033193b4e23369dd76e74f948c0a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/2bb1b8b089e23dcdad71089750c800df825e033193b4e23369dd76e74f948c0a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/Mechanism of Thermal Atomic Layer Etch of W Metal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":519,"height":203,"image_format":"jpeg","image_sha256":"c37da949e97122448a78ac4bb8b2e887fcaf129ca0be2ff71e0530558b1edf55","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":519,"height":203}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_10_figure_4.jpg","caption":"Figure 4. Relaxed geometries showing the non-volatile (dissociative) adsorption of $\\mathrm{WCl}_6$ on the O-covered W surface. The values in red indicate an energy cost, and the values in green indicate a gain in energy at $0\\mathrm{K}$ . The values above (or left of) the arrow are the energy change with respect to the preceding configuration, while the values below (or right of) the arrow are the energy change with respect to geometry A (cumulative energy change). In geometry A, $\\mathrm{WCl}_6$ is intact, and in geometries B, C, D, and E, the molecule is in the dissociated state. The reference gas phase molecule used for the binding energy calculation is $\\mathrm{WCl}_6$ .","id":"test/atomic-layer-etching/simulation-usecase/10/figure_4","sample_id":"atomic-layer-etching/simulation-usecase/10/figure_4","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/Mechanism of Thermal Atomic Layer Etch of W Metal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":564,"height":392,"image_format":"jpeg","image_sha256":"67982243c823bbe8c9f51c801d43f799f5c71acdf8a7dadd62197f4f60c27a31","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":564,"height":392}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_10_figure_5.jpg","caption":"Figure 5. Energy requirements for the removal of volatile species from geometry C and E from Figure 4. The values in red indicate a moderate energy cost, and the values in green indicate a gain in energy. The values above the arrow are the desorption energies of the respective volatile species, while the values below are the free energy change of desorption at $500\\mathrm{K}$ . The desorbed molecules are either $\\mathrm{WOCl_4}$ or $\\mathrm{WO}_2\\mathrm{Cl}_2$ .","id":"test/atomic-layer-etching/simulation-usecase/10/figure_5","sample_id":"atomic-layer-etching/simulation-usecase/10/figure_5","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/Mechanism of Thermal Atomic Layer Etch of W Metal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":669,"height":475,"image_format":"jpeg","image_sha256":"a84cfc3a4073f54aa7d5ea20a1f76a9ebc19b8af2dd9ffdd1b52d33b41262c57","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":475}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_10_figure_6.jpg","caption":"Figure 6. Minimum energy geometries showing the non-volatile adsorption of $2\\mathrm{WCl}_6$ on the O-covered W surface and energies needed to remove volatile species from them. The values in red indicate energy loss, and the values in green indicate energy gain. The values above the arrow are the desorption energies of the respective volatile species, while the values below are the free energy change of desorption at $500\\mathrm{K}$ .","id":"test/atomic-layer-etching/simulation-usecase/10/figure_6","sample_id":"atomic-layer-etching/simulation-usecase/10/figure_6","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/Mechanism of Thermal Atomic Layer Etch of W Metal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":589,"height":522,"image_format":"jpeg","image_sha256":"50f64e1e5d327c0f944448b07894cbc68fe898d6c6759d4dd55a6a021a6b0003","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":589,"height":522}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_10_figure_7.jpg","caption":"Figure 7. Panel (A) shows a schematic representation of an idealized W ALE cycle. The energies of the individual steps are listed in Table 2. Atom color coding is as follows: $\\mathrm{W} =$ gray, $\\mathrm{O} =$ red, and $\\mathrm{Cl} =$ green. Step 1 depicts the initial functionalization of the surface with the desired oxidant. Step 2 describes the purging of the excess oxidant from the reaction chamber. Step 3 describes the introduction of $\\mathrm{WCl}_6$ , which exhibits no spontaneous dissociation until elevated temperatures. Step 4 depicts the liberation of volatile $\\mathrm{WO}_x\\mathrm{Cl}_y$ species as the most likely etch species. Step 5 in an idealized system results in the repassivation of the surface leading into the next cycle and is thus labeled as equivalent to step 1. Additional passivated surface post etch is shown in panel (B). $\\mathrm{WCl}_x$ terminated surface is discussed in detail in Figure 8.","id":"test/atomic-layer-etching/simulation-usecase/10/figure_7","sample_id":"atomic-layer-etching/simulation-usecase/10/figure_7","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/Mechanism of Thermal Atomic Layer Etch of W Metal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":944,"height":764,"image_format":"jpeg","image_sha256":"5bd628440964055f056748964c65fb387ef653a796c42f69d5f77bbd85a1cd4f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":3,"width":655,"height":760},{"panel_id":"b","x":681,"y":23,"width":260,"height":716}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_10_figure_8.jpg","caption":"Figure 8. Interaction of $\\mathrm{O}_2$ on the Cl-covered W surface, which is identified as one of the possible surface terminations at the end of the ALE cycle in Figure 7. In case (a), six intact $\\mathrm{O}_2$ molecules are adsorbed on the surface with $0\\mathrm{eV} / \\mathrm{O}_2$ . In (b) and (c), $12\\mathrm{O}$ atoms (six dissociated $\\mathrm{O}_2$ molecules) are adsorbed close to surface W and close to Cl atoms with a release of $-4.8$ and $-0.5\\mathrm{eV} / \\mathrm{O}_2$ , respectively. The color coding is as follows: $\\mathrm{W} =$ gray, $\\mathrm{O} =$ red, and $\\mathrm{Cl} =$ green.","id":"test/atomic-layer-etching/simulation-usecase/10/figure_8","sample_id":"atomic-layer-etching/simulation-usecase/10/figure_8","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/Mechanism of Thermal Atomic Layer Etch of W Metal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":456,"height":717,"image_format":"jpeg","image_sha256":"7de7198dc8d6cb284b6f0f5c491fc51f2973f6044d4f433b395a2a4143ec2ad3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":456,"height":717}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_9583e752bfcd62ec9f2a41b96837cb7c6d0f1ac31bdfb420e1487bf6954cbf86.jpg","caption":"Table 3-Reaction mechanism for Step B.","id":"test/atomic-layer-etching/simulation-usecase/11/9583e752bfcd62ec9f2a41b96837cb7c6d0f1ac31bdfb420e1487bf6954cbf86","sample_id":"atomic-layer-etching/simulation-usecase/11/9583e752bfcd62ec9f2a41b96837cb7c6d0f1ac31bdfb420e1487bf6954cbf86","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/9583e752bfcd62ec9f2a41b96837cb7c6d0f1ac31bdfb420e1487bf6954cbf86.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/9583e752bfcd62ec9f2a41b96837cb7c6d0f1ac31bdfb420e1487bf6954cbf86.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:table_caption"},"width":1375,"height":1944,"image_format":"jpeg","image_sha256":"e9ae94f77237a0b3134a8c50e2285740b295260981e6eb693e3b5cf4c85ece2f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":-1,"width":1355,"height":1927}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image illustrates a reaction pathway with molecular structures labeled B0 through B6. Each step is accompanied by forward and reverse activation energies (Ea) in electron volts (eV).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction pathwayb | Forward | Reverse |\\n| --- | --- | --- |\\n| B0 | NAa | 42.27 |\\n| B1 | 1.45 | – |\\n| B2 | NAa | – |\\n| B3 | NAa | – |\\n| B4 | NAa | 21.29 |\\n| B5 | 0.82 | – |\\n| B6 | NAa | – |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the B0 to B1 transition, a trimethylaluminum (TMA) molecule adsorbs onto the fluorinated Al2O3 surface by binding to a fluorine atom. Simultaneously, one of the AlF2 groups dissociates from a fluorine atom, which transfers to a neighboring aluminum. This adsorption step has no calculated forward activation energy (proceeds via collision theory kinetics) but has a very high reverse barrier of 42.27 eV, making TMA desorption essentially irreversible under process conditions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Red atoms are oxygen, gray atoms are aluminum, green atoms are fluorine, blue atoms are carbon, and white atoms are hydrogen.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The high reverse barriers (21-42 eV) reflect the strong thermodynamic driving force for TMA to react with the fluorinated surface and release volatile DMAF, making these reactions essentially irreversible.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Dimethylaluminum fluoride (DMAF) is formed when TMA exchanges a methyl group for a fluorine atom, and its volatility drives the etching process forward.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_bab33ac6df6108abed34da44122aef20e0ca779868fbf1b12fc7a1851c078850.jpg","caption":"Table 2-Reaction mechanism for Step A.","id":"test/atomic-layer-etching/simulation-usecase/11/bab33ac6df6108abed34da44122aef20e0ca779868fbf1b12fc7a1851c078850","sample_id":"atomic-layer-etching/simulation-usecase/11/bab33ac6df6108abed34da44122aef20e0ca779868fbf1b12fc7a1851c078850","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/bab33ac6df6108abed34da44122aef20e0ca779868fbf1b12fc7a1851c078850.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/bab33ac6df6108abed34da44122aef20e0ca779868fbf1b12fc7a1851c078850.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:table_caption"},"width":1386,"height":1275,"image_format":"jpeg","image_sha256":"43845766ff9a5a2f382f5fca4c7c5054cd03c9f56c11e4d5bbe040460ae65a74","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":12,"width":1368,"height":1259}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image illustrates a reaction pathway with molecular structures labeled A0 through A5. Each step is accompanied by forward and reverse activation energies (Ea) in electron volts (eV).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Dissociative adsorption of HF onto the surface (A0→A1), diffusion of adsorbed hydrogen atoms (A1↔A2), surface reaction forming H2O when two H atoms are adjacent (A3↔A4), and desorption of the H2O molecule (A4→A5).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The H2O formation step (A3→A4) has the highest forward activation energy at 1.28 eV, making it the rate-limiting surface reaction.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The single arrow indicates that H2O desorption is treated as irreversible in the model. Once water molecules are released from the surface, they are removed from the system during the subsequent purge step and do not re-adsorb. In contrast, double arrows for other steps indicate reversible reactions where both forward and reverse processes can occur, as reflected by the listed forward and reverse activation energies.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The activation energies were calculated using the nudged elastic band (NEB) method implemented in Quantum ESPRESSO, which finds minimum energy paths between optimized reactant and product structures.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_caaec1bed07e19806910baf7c50bd9bbccede0b96bb8412e3edcb996031c89bd.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/11/caaec1bed07e19806910baf7c50bd9bbccede0b96bb8412e3edcb996031c89bd","sample_id":"atomic-layer-etching/simulation-usecase/11/caaec1bed07e19806910baf7c50bd9bbccede0b96bb8412e3edcb996031c89bd","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/caaec1bed07e19806910baf7c50bd9bbccede0b96bb8412e3edcb996031c89bd.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/caaec1bed07e19806910baf7c50bd9bbccede0b96bb8412e3edcb996031c89bd.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":1386,"height":489,"image_format":"jpeg","image_sha256":"d94a81b7ddf24018ac63d556e4c972ca31ef2427faadb7ae0ea84c4f6df9cadd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":52,"width":1375,"height":434}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Final step of the Step B reaction mechanism showing the B6→B7 transition where the volatile DMAF molecule bound to the r-AlF3 site desorbs, removing an aluminum atom from the substrate. This propagation step has a forward activation energy of 1.12 eV and is irreversible. The footnotes clarify that adsorption rate constants are calculated by Collision Theory rather than NEB, and provide the atom color legend (red=O, gray=Al, green=F, blue=C, white=H).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After DMAF desorbs in the B6→B7 step, an aluminum atom is removed from the Al2O3 substrate, completing the etching at the r-AlF3 site. A neighboring fluorine atom then attaches to the remaining l-AlF2 site to form l-AlF3, which can subsequently be removed through further TMA reactions. This is the propagation step that enables continued etching across the surface.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The forward activation energy for the B6→B7 transition is 1.12 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"\\\"NA\\\" indicates that those steps involve adsorption or physisorption, for which rate constants are calculated using Collision Theory rather than the NEB method used for surface reactions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dash indicates the reverse reaction is not considered in the model because DMAF is highly volatile and immediately removed from the system, making re-adsorption negligible under process conditions.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_21_figure_2.jpg","caption":"Figure 2. Simplified cartoon of directional Si ALE showing Steps A (modification of surface via chlorination to form $\\mathrm{SiCl}_{x}$ ) and B (desorption of the modified layer via Ar ion energy). The data shows self-limiting removal of the chlorinated Si layer in Step B at $50 \\mathrm{eV}$ as a function of step time.","id":"test/atomic-layer-etching/simulation-usecase/21/figure_2","sample_id":"atomic-layer-etching/simulation-usecase/21/figure_2","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/Review Paper -- Atomic Layer Etching Rethinking the Art of Etch.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":578,"height":630,"image_format":"jpeg","image_sha256":"2d708118c28f188d35631d9a42e10e9b24a37ceeecf900d30795f232f0f56795","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":5,"width":569,"height":222},{"panel_id":"b","x":31,"y":286,"width":503,"height":330}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_7_5df46ecd78fb58ba7811704a7b8b077622b705ee48a6af9e1a864efeb9785ead.jpg","caption":"G.5. t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t h","id":"test/atomic-layer-etching/simulation-usecase/7/5df46ecd78fb58ba7811704a7b8b077622b705ee48a6af9e1a864efeb9785ead","sample_id":"atomic-layer-etching/simulation-usecase/7/5df46ecd78fb58ba7811704a7b8b077622b705ee48a6af9e1a864efeb9785ead","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/5df46ecd78fb58ba7811704a7b8b077622b705ee48a6af9e1a864efeb9785ead.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/5df46ecd78fb58ba7811704a7b8b077622b705ee48a6af9e1a864efeb9785ead.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/In silico design of a thermal atomic layer etch process of cobalt.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1078,"height":753,"image_format":"jpeg","image_sha256":"6633c0b272a6fb83baf09bb61260a525aab0bb8111f46a289a23f780df44e69f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1078,"height":753}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_7_fig_1.jpg","caption":"FIG. 1. Graphical representation of the steps involved in the computer aided discovery of a new thermal atomic layer etch process.","id":"test/atomic-layer-etching/simulation-usecase/7/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/7/fig_1","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/In silico design of a thermal atomic layer etch process of cobalt.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":675,"height":428,"image_format":"jpeg","image_sha256":"56f494d5a48cdbb3ddbe6e4514b99831eb3fa082a785f36ba1fe0bf572959950","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":428}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_7_fig_2.jpg","caption":"FIG. 2. Schematic representation of the ideal thermal atomic layer etch process for Co.","id":"test/atomic-layer-etching/simulation-usecase/7/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/7/fig_2","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/In silico design of a thermal atomic layer etch process of cobalt.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":670,"height":406,"image_format":"jpeg","image_sha256":"e8eb3597e362d9962f45c73de89f4b20a4873d476d5db682a71c71d5c2677af8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":670,"height":406}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_7_fig_3.jpg","caption":"FIG. 3. Chemical formulas and structures of the target volatile species and first pulse chemicals.","id":"test/atomic-layer-etching/simulation-usecase/7/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/7/fig_3","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/In silico design of a thermal atomic layer etch process of cobalt.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1056,"height":1036,"image_format":"jpeg","image_sha256":"a2b92eaa0bc25539f53962d63455a75bd8750246ef2188e82040da5f57117b68","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1056,"height":1036}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_1.jpg","caption":"FIG. 1. (Color online) Schematic representation of thermal ALD and plasma-assisted ALD. During the co-reactant step of the cycle (the $2^{\\mathrm{nd}}$ half-cycle), the surface is exposed to a reactant gas or vapor such as $\\mathrm{NH_3}$ or $\\mathrm{H}_2\\mathrm{O}$ or to species generated by a plasma.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_1","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":5,"width":666,"height":167},{"panel_id":"b","x":2,"y":191,"width":668,"height":386}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":672,"height":578,"image_format":"jpeg","image_sha256":"525efe3ff691cf3734ea5ef7bdab960114723fc74fcd7c3af137cce8116d26e3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_3_figure_12.jpg","caption":"Figure 12. Schematic of each step in the proposed mechanism.","id":"test/atomic-layer-deposition/experimental-usecase/3/figure_12","sample_id":"atomic-layer-deposition/experimental-usecase/3/figure_12","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":586,"height":700}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/images/figure_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/3/Hausmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":586,"height":700,"image_format":"jpeg","image_sha256":"7d26ed180a3d1d11bde18a155f7188009ad1194e50700c10e3b74db6ec0ab782","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_61_figure_7.jpg","caption":"Figure 7. Schematic representation of the proposed reaction mechanisms during the ALD of Co using $\\mathrm{NH}_3$ or $\\mathrm{H}_2 / \\mathrm{N}_2$ plasma as the co-reactant. During the precursor subcycle $(^{\\circ}\\mathrm{A}^{\\prime})$ , $\\mathrm{CoCp}_2$ binds to the surface, accompanied by the release of $\\mathrm{HCp}$ . The site to which $\\mathrm{CoCp}_2$ chemisorbs is indicated as \"X\" because it remains to be identified. In the co-reactant subcycle $(^{\\circ}\\mathrm{B}^{\\prime})$ , the $\\mathrm{NH}_{x,x< 3}$ species from the plasma cause the release of $\\mathrm{HCp}$ and fragments thereof and lead to the formation of $\\mathrm{NH}_y$ surface groups. $\\mathrm{NH}_y$ with the subscript $y$ is used to indicate the distinction from $\\mathrm{NH}_x$ species in the plasma.","id":"test/atomic-layer-deposition/experimental-usecase/61/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/61/figure_7","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":438,"height":336}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/61/Vos et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"61","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":428,"height":336,"image_format":"jpeg","image_sha256":"ca96c848e03f8e3bd687397c1ee4c9ded436e0bbdf35e15601726d08150bad6c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_33_figure_7.jpg","caption":"Figure 7. DFT-predicted structures of the lowest-energy (left) physisorbed and (right) chemisorbed species and their relative energies from the TMA adsorption on pristine graphene, oxygenated graphene (i.e., graphene oxide, GO), and hydrogenated graphene (HG).","id":"test/atomic-layer-deposition/simulation-usecase/33/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/33/figure_7","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image presents a series of reaction schemes illustrating the interaction between various forms of graphene (pristine, epoxydized, hydroxylated, and GO mixture) with AlMe₃, along with the corresponding energy changes in electron volts (eV).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Surface Type | E_ads before (eV) | E_ads after (eV) |\\n|---|---|---|\\n| Pristine Graphene | -0.53 | 1.84 |\\n| Epoxydized GO | -1.70 | -7.37 |\\n| Hydroxylated GO | -0.45 | -2.67 |\\n| GO Mixture | -0.61 | -5.33 |\\n| HG Stirrup Conformation | -0.54 | -2.23 |\\n| HG Honeycomb Conformation | -0.44 | -1.39 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The left structure is the lowest energy physisorbed TMA configuration, and the right structure is the lowest energy chemisorbed configuration for that surface model.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Epoxidized GO: chemisorption energy about minus 7.37 eV, strongest binding shown.\\n\\nGO mixture: chemisorption energy about minus 5.33 eV. \\n\\nHydroxylated GO: chemisorption energy about minus 2.67 eV.\\n\\nHydrogenated graphene stirrup: chemisorption energy about minus 2.23 eV.\\n\\nHydrogenated graphene honeycomb: chemisorption energy about minus 1.39 eV.\\n\\nPristine graphene: chemisorption energy plus 1.84 eV, unfavorable.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The paper attributes the stronger binding to the availability of oxygen p orbitals on the functionalized surface that can interact with the Al center in TMA. Pristine graphene has a chemically stable sp2 carbon lattice, so TMA only physisorbs weakly and chemisorption is energetically unfavorable. This difference explains why the calculated chemisorption energies are strongly negative on GO models but positive on pristine graphene.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure shows that chemisorption of TMA is predicted to be unfavorable on pristine graphene but favorable on oxygenated and hydrogenated graphene models, which implies a lower nucleation barrier for Al2O3 ALD after functionalization. The paper connects this to the experimentally observed uniform Al2O3 coverage after plasma treatments, versus nonuniform growth on pristine graphene. It also notes that hydrogenated graphene binds TMA less strongly than GO, consistent with a longer nucleation delay than GO but still improved adsorption relative to pristine graphene.\"}]}]","bbox":[{"panel_id":"a","x":11,"y":3,"width":564,"height":1719}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":587,"height":1739,"image_format":"jpeg","image_sha256":"29ea46c3372517ec1af6b502ff781b9c147f5d3ee6d23af99cb38089c9c4e1a3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_33_figure_8.jpg","caption":"Figure 8. Schematic overview of the energetically most favorable TMA chemisorption mechanisms on pristine and functionalized graphene based on the PBE-D3-level calculations.","id":"test/atomic-layer-deposition/simulation-usecase/33/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/33/figure_8","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"},{"panel_id":"d","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic of the most favorable TMA chemisorption pathway on pristine graphene, which the calculations find to be unfavorable overall and consistent with poor Al2O3 nucleation on pristine graphene.\"},{\"panel_id\":\"b\",\"text\":\"Schematic of the most favorable TMA chemisorption on epoxidized graphene oxide, showing strong TMA binding via oxygen sites and formation of a volatile byproduct during dissociative adsorption.\"},{\"panel_id\":\"c\",\"text\":\"Schematic of the most favorable TMA chemisorption on hydroxylated graphene oxide, proceeding by ligand exchange with methane formation as the volatile byproduct.\"},{\"panel_id\":\"d\",\"text\":\"Schematic of the most favorable TMA chemisorption on hydrogenated graphene, where chemisorption proceeds via methane formation and is preceded by hydrogen removal as H2, which helps restore the graphene bonding configuration.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA is trimethylaluminum, the Al2O3 ALD precursor. CH4 and H2 indicate gaseous reaction products released during dissociative chemisorption on functionalized graphene surfaces.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The calculations attribute stronger adsorption on graphene oxide to the availability of oxygen p orbitals that can interact with the Al center in TMA. This provides more favorable binding configurations than the chemically stable sp2 carbon lattice of pristine graphene. As a result, oxygen functionalization is predicted to reduce the nucleation delay and support more uniform Al2O3 growth.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The paper highlights that the most plausible pathway on hydrogenated graphene involves removal of surface hydrogen, including H2 release, followed by methane formation during TMA chemisorption. This mechanism is predicted to clean hydrogen functionalities from the surface and recover the graphene bonding configuration, supporting reversibility. In the paper’s interpretation, this is a key reason why H2 plasma functionalization can enable ALD nucleation while still allowing recovery of graphene electrical properties after ALD and annealing.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Pristine graphene: adsorption is predicted to be kinetically and thermodynamically unfavorable, with the preferred dissociative route involving methyl transfer and a high barrier. \\n\\nEpoxidized graphene oxide: strong binding via oxygen sites, with ethane release predicted as the preferred pathway for the ordered epoxy model.\\n\\nHydroxylated graphene oxide: chemisorption proceeds via methane release, similar to other OH terminated oxides.\\n\\nHydrogenated graphene: chemisorption is most likely via methane release but is preceded by H2 release to facilitate binding.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":1,"width":326,"height":255},{"panel_id":"b","x":337,"y":1,"width":296,"height":253},{"panel_id":"c","x":4,"y":258,"width":325,"height":224},{"panel_id":"d","x":339,"y":249,"width":296,"height":234}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":637,"height":492,"image_format":"jpeg","image_sha256":"8d9e484a49a9db7c868697a90bf977122735adadc1f85d151a1ae67a43695877","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_37_fig_4.jpg","caption":"Fig. 4. ALD reaction portrait for optimum growth of alumina from TMA and $\\mathrm{H}_2\\mathrm{O}$ , subject to the constraints of $[\\mathrm{Me}] = 1 / \\mathrm{cell}$ and $[\\mathrm{H}] = 2 / \\mathrm{cell}$ .","id":"test/atomic-layer-deposition/simulation-usecase/37/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/37/fig_4","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The ALD reaction sequence for alumina growth from TMA and H₂O under optimal conditions, showing that one TMA molecule reacts per surface cell ([Me] = 1/cell) and two H atoms per cell ([H] = 2/cell), leading to CH₄ desorption and regeneration of the hydroxylated surface. The figure highlights the stoichiometry and steric constraints governing monolayer formation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Description|\\n|-----------|\\n|ALD reaction portrait for optimum growth of alumina from TMA and H₂O, subject to the constraints of [Me] = 1/cell and [H] = 2/cell|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. CH₄ is desorbed during the adsorption of TMA on the hydroxylated surface.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"[Me] = 1 per cell, whereas [H] = 2 per cell, indicating that more H atoms are involved in surface regeneration than TMA methyl groups in adsorption.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Steric hindrance at the surface prevents deposition of a full monolayer of Al₂O₃. Even under optimal conditions, only about half a monolayer per cycle can form because the adsorbed TMA molecules occupy space that limits additional adsorption. This directly impacts the growth rate, limiting it to approximately 0.75 monolayer per cycle or 1.6 Å per cycle, slightly lower than the theoretical maximum predicted from the mechanistic coverage of [Me] and [H].\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hydroxylated substrate (gibbsite-like), Adsorbed TMA molecules ([Me]), CH₄ desorbed molecules, Surface Al(CH₃) capping groups, Hydroxyl groups restored by H₂O pulse ([H])\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":425,"height":405}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/Simon D. Elliott.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":425,"height":405,"image_format":"jpeg","image_sha256":"0b404cd821a6bf133062acf1710234534a93f2f5af78763a2fcf6bc617843389","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_37_fig_5.jpg","caption":"Fig. 5. ALD reaction portraits showing the effect of lower coverage: (a) $\\mathrm{CH}_3$ coverage at half the optimum level; (b) $\\mathrm{H}$ (or $\\mathrm{OH}$ ) coverage at half the optimum level.","id":"test/atomic-layer-deposition/simulation-usecase/37/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/37/fig_5","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"CH₃ coverage set at half of the optimum level, resulting in a lower growth rate of 0.8 Å/cycle, while OH coverage remains unchanged, illustrating the effect of reduced CH₃ coverage on ALD growth.\"},{\"panel_id\":\"b\",\"text\":\"H (or OH) coverage at half the optimum level, leading to a non-linear reduction in growth rate to 1.1 Å/cycle and a surface saturated with a mixture of Al(CH₃) and Al(CH₃)₂, illustrating the effect of reduced H/OH coverage on ALD kinetics.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Species | Coverage | Growth Rate (Å/cycle) | Notes |\\n|---|---|---|---|\\n| [CH₃] | 0.5 × optimum | 0.8 | Reduced TMA adsorption lowers growth rate |\\n| OH | optimum | – | Hydroxyl coverage unchanged |\"},{\"panel_id\":\"b\",\"text\":\"| Species | Coverage | Growth Rate (Å/cycle) | Notes |\\n|---|---|---|---|\\n| H | 0.5 × optimum | 1.1 | Partial dehydroxylation affects growth rate non-linearly |\\n| Al(CH₃)/Al(CH₃)₂ | mixed | – | Surface saturated mixture at end of TMA pulse |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"With H (or OH) coverage at half the optimum, the growth rate decreases to 1.1 Å/cycle, which is less than the drop observed with half CH₃ coverage (0.8 Å/cycle).\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Deviations from optimum surface coverage significantly affect ALD kinetics. Lower CH₃ coverage limits the number of TMA molecules that can adsorb, directly reducing the growth rate. Reduced H or OH coverage alters the surface termination non-linearly, partially limiting reactions during the H₂O pulse and producing a mixed surface of Al(CH₃) and Al(CH₃)₂. These effects result in slower growth and highlight the importance of maintaining sufficient surface coverage for efficient and predictable ALD film deposition.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"[CH₃] – half optimum in 5a, reduces growth rate, OH – unchanged in 5a, H – half optimum in 5b, affects growth rate non-linearly, Al(CH₃)/Al(CH₃)₂ – surface mixture in 5b\"}]}]","bbox":[{"panel_id":"a","x":4,"y":5,"width":438,"height":397},{"panel_id":"b","x":456,"y":6,"width":424,"height":397}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/Simon D. Elliott.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":881,"height":403,"image_format":"jpeg","image_sha256":"d4e0f43a446c14947dad0521e899b25fa38a1bed37d9f43d9a987d1034503553","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_37_fig_6.jpg","caption":"Fig. 6. ALD reaction portrait showing the effect of incomplete H-transfer (e.g. at low temperature) so that not all Me or H is consumed each cycle. In the example shown here, only half of the available H is allowed to react to yield $\\mathrm{CH_4}$ , compared to the optimum case (Fig. 4).","id":"test/atomic-layer-deposition/simulation-usecase/37/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/37/fig_6","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 6 illustrates the effect of incomplete H-transfer on the ALD growth of alumina. Due to kinetic limitations at low temperatures, only half of the available H reacts during the H₂O pulse, resulting in partial CH₄ desorption. As a result, some CH₃ and OH remain on the surface ([CH₃] > 6.6 µmol/m², [OH] > 13 µmol/m²), which can lead to contamination and a reduced growth rate of approximately 0.8 Å/cycle, compared to the optimum conditions shown in Fig. 4.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Species | Coverage (µmol/m²) | Notes |\\n|---|---|---|\\n| [CH₃] | >6.6 | Some unreacted CH₃ remains due to incomplete H-transfer |\\n| [OH] | >13 | Hydroxyl groups not fully consumed, may cause film contamination |\\n| H reacted | 50% | Only half of available H reacts to produce CH₄, compared to optimum |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The growth rate drops to approximately 0.8 Å/cycle, which is about half of the optimum rate.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Kinetically-limited ALD at low temperatures leads to incomplete H-transfer, leaving unreacted CH₃ and OH on the surface. This residual material can contaminate the growing alumina film and reduce the effective growth rate to about 0.8 Å/cycle. Such limitations are important for controlling film uniformity, purity, and overall deposition efficiency, especially when precise monolayer growth is required.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"[CH₃] (residual methyl groups), [OH] (residual hydroxyl groups), H (only 50% reacts to form CH₄)\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":422,"height":389}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/37/Simon D. Elliott.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":422,"height":389,"image_format":"jpeg","image_sha256":"163d5b7a36eab86d421900d0a5451f45ad539496af2eba47b83ca434f52e6534","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_47_figure_3.jpg","caption":"Figure 3. ALD of $\\mathrm{SiO}_2$ and $\\mathrm{Si}_3\\mathrm{N}_4$ . The proposed mechanistic steps for reactive chemisorption of an $\\mathrm{SiH}_2\\mathrm{X}_2$ precursor and desorption of functional group X via proton transfer from an Si-Y-H functionalized surface $(Y = 0$ , NH or N). Reproduced with permission.[69] Copyright 2014, American Chemical Society.","id":"test/atomic-layer-deposition/simulation-usecase/47/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/47/figure_3","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":878,"height":650}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/47/Simon D. Elliott et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":878,"height":650,"image_format":"jpeg","image_sha256":"c11c0e93f20fbd68fb4c6b7ddc02505f758ba014bb716cecb73fc9ef8e45033c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_1_figure_2.jpg","caption":"Figure 2. (a) (d) Schematic representation of an ALEt process. Figure 2(a) is an incoming substrate, Figure 2(b) shows an absorbed layer on the surface atoms due to gaseous/chemical precursor exposure, Figure 2(c) shows exposure of the modified surface layer to ligands such that the $\\mathbf{M}^*$ L molecule can be removed either by temperature or pumping down to low pressure, Figure 2(d).","id":"test/atomic-layer-etching/experimental-usecase/1/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/1/figure_2","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1006,"height":522}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/Atomic Layer Etching An Industry Perspective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1006,"height":522,"image_format":"jpeg","image_sha256":"c0059d0468622292ea4a1d25246be178d83746f1403e3f2d43554cdbfc7784bd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_18_fig_4.jpg","caption":"FIG. 4. Schematic of proposed reaction mechanism for $\\mathrm{Al}_2\\mathrm{O}_3$ ALE showing (a) Sn(acac)2 reaction and (b) HF reaction. Reprinted with permission from Lee and George, ACS Nano 9, 2061 (2015). Copyright 2015, American Chemical Society.","id":"test/atomic-layer-etching/experimental-usecase/18/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/18/fig_4","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figures illustrate a two-step process involving the removal of SnF ligands through ligand exchange\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the subsequent fluorination of Al2O3 surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Description | Reactants/Conditions | Products/Surface State |\\n|---------------------------|----------------------------------|---------------------------------------|\\n|Removal step: Ligand Exchange | Surface: Al₂O₃ with Al–F species; Sn precursor (O–Sn–O ligand) | Sn species bonded to surface; Al–F partially removed |\\n| Reaction | O–Sn–O ligand exchanges with Al–F groups | Formation of O–SnF species on surface |\"},{\"panel_id\":\"b\",\"text\":\"| Description | Reactants/Conditions | Products/Surface State |\\n|---------------------------|----------------------------------|---------------------------------------|\\n| Modification Step: Fluorination | Surface: Al₂O₃ with Sn species; HF introduced | Surface becomes fluorinated (Al–F groups restored); H₂O byproduct |\\n| Reaction | HF reacts with Sn species | Sn removed; Al–F coverage increased |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Proposed reaction mechanism for Al2O3 ALE shows\\n (a)Sn(acac)2 reaction \\n(b) HF reaction\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"One of the widely studied implementations of thermal isotropic ALE at constant wafer temperature is etching of Al2O3 with alternating HF (for instance in the form of HF-pyridine) and Sn (acac)2 gases.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The metal oxide surface is converted into metal fluoride by HF in the modification step. The removal of aluminum atoms follows via a ligand-exchange reaction. Sn(acac)2 exchanges its acac ligands with the fluorine at the AlF3\\nsurface. This results in the formation of volatile SnF(acac) and Al (acac)3 reaction products. The term “ligand-exchange” comes from this reaction mechanism. Modification and removal steps require two sequential or parallel surface reactions to convert Al2O3 first into AlF3 and then into Al(acac)3.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":5,"width":332,"height":507},{"panel_id":"b","x":399,"y":14,"width":280,"height":502}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/18/Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":683,"height":559,"image_format":"jpeg","image_sha256":"7775d39cdcb61ab00f51e817912ef140d61bbd5113bbb66267ed49188f1d32c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_2ab6d9ea5f683368cca09771bd0bd59fdf5868c7fdd52d07eb7ab61ab31ad5bf.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/20/2ab6d9ea5f683368cca09771bd0bd59fdf5868c7fdd52d07eb7ab61ab31ad5bf","sample_id":"atomic-layer-etching/experimental-usecase/20/2ab6d9ea5f683368cca09771bd0bd59fdf5868c7fdd52d07eb7ab61ab31ad5bf","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":42,"y":10,"width":405,"height":120},{"panel_id":"b","x":42,"y":137,"width":403,"height":104}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/2ab6d9ea5f683368cca09771bd0bd59fdf5868c7fdd52d07eb7ab61ab31ad5bf.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/2ab6d9ea5f683368cca09771bd0bd59fdf5868c7fdd52d07eb7ab61ab31ad5bf.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":447,"height":242,"image_format":"jpeg","image_sha256":"c55fe71cbb53e584c49aef3d9ca8e97d06993cabc57261ad1e0348f47db36aab","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_1.jpg","caption":"Fig. 1. Schematic for CoO thermal ALE using sequential Hacac and $\\mathrm{O_3}$ exposures based on: (A) Hacac removal of CoO as $\\mathrm{Co(acac)_2}$ and $\\mathrm{H_2O}$ ; and (B) $\\mathrm{O_3}$ cleaning of carbon species remaining after Hacac exposure.","id":"test/atomic-layer-etching/experimental-usecase/21/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_1","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":7,"width":882,"height":261},{"panel_id":"b","x":8,"y":288,"width":891,"height":306}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":980,"height":597,"image_format":"jpeg","image_sha256":"4616fe0abeca703e7ade51ce13e2c221069052ec5ebda35b4bb791d5983d88a6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_14.jpg","caption":"Fig. 14. Schematic for thermal CoO ALE using sequential Hacac and $\\mathrm{O_3}$ exposures based on results from this study. First cleaning step: (B') $\\mathrm{O_3}$ cleans residual carbon from initial h-CoO film and oxidizes film to $\\mathrm{Co_3O_4}$ . During steady state ALE: (A) Hacac reduction of $\\mathrm{Co_3O_4}$ to $\\mathrm{CoO}$ , removal of $\\mathrm{CoO}$ as $\\mathrm{Co(acac)_2}$ and $\\mathrm{H_2O}$ , and buildup of carbon species; and (B) $\\mathrm{O_3}$ cleaning of carbon species remaining after Hacac exposure and oxidation of $\\mathrm{CoO}$ to $\\mathrm{Co_3O_4}$ .","id":"test/atomic-layer-etching/experimental-usecase/21/fig_14","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_14","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":8,"y":3,"width":920,"height":933}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_14.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1003,"height":942,"image_format":"jpeg","image_sha256":"fb952d982079d6cd4f029b00922b312c9162a3df8dc8cc5d690ddaa1bd1bc845","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_f0620e7ba6ebd825cf4c00630f1afabb30001aee49622b4c69dc720e3f189d35.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/25/f0620e7ba6ebd825cf4c00630f1afabb30001aee49622b4c69dc720e3f189d35","sample_id":"atomic-layer-etching/experimental-usecase/25/f0620e7ba6ebd825cf4c00630f1afabb30001aee49622b4c69dc720e3f189d35","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":46,"y":7,"width":492,"height":117},{"panel_id":"b","x":55,"y":139,"width":487,"height":120},{"panel_id":"c","x":63,"y":274,"width":478,"height":115}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/f0620e7ba6ebd825cf4c00630f1afabb30001aee49622b4c69dc720e3f189d35.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/f0620e7ba6ebd825cf4c00630f1afabb30001aee49622b4c69dc720e3f189d35.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":542,"height":392,"image_format":"jpeg","image_sha256":"5e09aae9bd9e804b92bccc07cfa01b0c3e3cdf322e99030b876f1abcfba1b037","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_3_3867828aabdcebeb2d14ad2a2fb95a1a072eb6ee61ceaf985a0a438c2fdc01d5.jpg","caption":"","id":"test/atomic-layer-etching/experimental-usecase/3/3867828aabdcebeb2d14ad2a2fb95a1a072eb6ee61ceaf985a0a438c2fdc01d5","sample_id":"atomic-layer-etching/experimental-usecase/3/3867828aabdcebeb2d14ad2a2fb95a1a072eb6ee61ceaf985a0a438c2fdc01d5","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates the step-by-step transformation of a pristine bilayer structure through the adsorption of chlorine atoms and subsequent exposure to argon gas, leading to a monolayer structure.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the intensity of spectral peaks at various wavenumbers for different states of the material, including pristine bilayer, Cl adsorption, and monolayer structures. Where the intensities decrease upon plasma exposure.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the intensity of spectral peaks at various wavenumbers for different states of the material, including pristine bilayer, Cl adsorption, and monolayer structures. Where the intensities increase upon plasma exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | Description |\\n|---|---|\\n| Pristine (bilayer) | Initial state with bilayer structure |\\n| Cl adsorption | Chlorine atoms adsorb onto the surface |\\n| Ar 30 s | Argon gas exposure for 30 seconds |\\n| Ar 60 s | Argon gas exposure for 60 seconds |\\n| Ar 120 s | Argon gas exposure for 120 seconds |\\n| Pristine (monolayer) | Final state with monolayer structure |\"},{\"panel_id\":\"b\",\"text\":\"| Wavenumber (cm⁻¹) | Intensity (a.u.) Pristine Bi|Intensity (a.u.) Cl ads|Intensity (a.u.) 30s Ar|Intensity (a.u.) 60s Ar|Intensity (a.u.) 120s Ar|Intensity (a.u.) Pristine Mono|\\n|---|---|---|---|---|---|---|\\n| 370 | - |- |- |- |- |- |\\n| 383 | Peak 1*I |Peak 1*I |Peak 0.9*I |Peak 0.6*I |Peak 0.5*I |Peak 0.4*I |\\n| 390 | - |- |- |- |- |- |\\n| 405 | Peak 1*I |Peak 1*I |Peak 0.9*I |Peak 0.6*I |Peak 0.5*I |Peak 0.4*I |\\n| 420 | - |- |- |- |- |- |\"},{\"panel_id\":\"c\",\"text\":\"| Wavenumber (cm⁻¹) | Intensity (a.u.) Pristine Bi|Intensity (a.u.) Cl ads|Intensity (a.u.) 30s Ar|Intensity (a.u.) 60s Ar|Intensity (a.u.) 120s Ar|Intensity (a.u.) Pristine Mono|\\n|---|---|---|---|---|---|---|\\n| 580 | - |- |- |- |- |- |\\n| 620 | Peak 0.6*I |Peak 0.6*I |Peak 0.8*I |Peak 0.9*I |Peak 1*I |Peak 1*I |\\n| 665 | Peak 0.6*I |Peak 0.6*I |Peak 0.8*I |Peak 0.9*I |Peak 1*I |Peak 1*I |\\n| 720 | - |- |- |- |- |- |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plasma exposure takes the longest. This is likely as the plasma is at a high pressure. Also modification usually does not take more than a few seconds.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At low pressures, ions are more accelerated towards the substrate table and can also damage the underlaying monolayer for to long exposures.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes there is a dependence. With the removal of half of the material, the intensity is also dropping. This indicates a proportional relation.\"}]}]","bbox":[{"panel_id":"a","x":16,"y":9,"width":372,"height":200},{"panel_id":"b","x":16,"y":235,"width":190,"height":135},{"panel_id":"c","x":209,"y":235,"width":186,"height":135}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/images/3867828aabdcebeb2d14ad2a2fb95a1a072eb6ee61ceaf985a0a438c2fdc01d5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/images/3867828aabdcebeb2d14ad2a2fb95a1a072eb6ee61ceaf985a0a438c2fdc01d5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/Atomic Layer Etching Mechanism of MoS2 for Nanodevices.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":397,"height":375,"image_format":"jpeg","image_sha256":"dad470a8c4333c82d17e9f48e96756dc65ff77314d4dc9beea67ac3f6da74dc0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_3_figure_4.jpg","caption":"Figure 4. (a) Raman spectra of the CVD bilayer $\\mathrm{MoS}_2$ before and after Cl adsorption and those after the $\\mathrm{Ar^{+}}$ ion exposure from 15 to $200~\\mathrm{s}$ b) Raman peak intensities of $\\mathrm{E}_{1\\mathrm{g}}^{1}$ and $\\mathrm{A_{1g}}$ of $\\mathrm{MoS}_2$ c) Peak positions of $\\mathrm{E}_{1\\mathrm{g}}^{1}$ and $\\mathrm{A_{1g}}$ of $\\mathrm{MoS}_2$ and the gap distance between $\\mathrm{E}_{1\\mathrm{g}}^{1}$ and $\\mathrm{A_{1g}}$ (d) Raman and (e) photoluminescence (PL) spectra of the exfoliated bilayer $\\mathrm{MoS}_2$ and the exfoliated monolayer $\\mathrm{MoS}_2$ flakes. The Raman and PL spectra of the exfoliated bilayer $\\mathrm{MoS}_2$ flake before and after Cl adsorption and those after the $\\mathrm{Ar^{+}}$ ion exposure from 30 to $120~\\mathrm{s},$ exhibiting the formation of the monolayer $\\mathrm{MoS}_2$ from the bilayer $\\mathrm{MoS}_2,$ are also shown. (f) Drain currents vs gate voltages of the bottom-gate $\\mathrm{MoS}_2$ field effect transistors (FETs) that were fabricated with the exfoliated bilayer $\\mathrm{MoS}_2,$ the exfoliated monolayer $\\mathrm{MoS}_2,$ and the exfoliated bilayer $\\mathrm{MoS}_2$ after one cycle of $\\mathrm{MoS}_2$ ALE with $120~\\mathrm{s}$ (monolayer etching condition) and $200~\\mathrm{s}$ (overexposure with $\\mathrm{Ar^{+}}$ ion) of $\\mathrm{Ar^{+}}$ ion exposure. The inset shows an optical microscopic image of the bottom-gate $\\mathrm{MoS}_2$ FET that was fabricated with the exfoliated bilayer $\\mathrm{MoS}_2$","id":"test/atomic-layer-etching/experimental-usecase/3/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/3/figure_4","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"multiple line chart"},{"panel_id":"d","label":"multi-axis chart"},{"panel_id":"e","label":"stacked spectra chart"},{"panel_id":"f","label":"multi spectra chart"},{"panel_id":"g","label":"multiple scatter plot"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":153,"y":3,"width":1102,"height":741},{"panel_id":"b","x":11,"y":769,"width":438,"height":338},{"panel_id":"c","x":457,"y":773,"width":421,"height":333},{"panel_id":"d","x":884,"y":771,"width":500,"height":323},{"panel_id":"e","x":10,"y":1124,"width":438,"height":348},{"panel_id":"f","x":455,"y":1123,"width":423,"height":346},{"panel_id":"g","x":883,"y":1124,"width":455,"height":344}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/3/Atomic Layer Etching Mechanism of MoS2 for Nanodevices.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1386,"height":1475,"image_format":"jpeg","image_sha256":"1f6ec70600ccce0581dbe29e07504c8aa5f16c82d1530b6dabae50a86544ac77","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_10_2bb1b8b089e23dcdad71089750c800df825e033193b4e23369dd76e74f948c0a.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/10/2bb1b8b089e23dcdad71089750c800df825e033193b4e23369dd76e74f948c0a","sample_id":"atomic-layer-etching/simulation-usecase/10/2bb1b8b089e23dcdad71089750c800df825e033193b4e23369dd76e74f948c0a","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":519,"height":203}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/2bb1b8b089e23dcdad71089750c800df825e033193b4e23369dd76e74f948c0a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/2bb1b8b089e23dcdad71089750c800df825e033193b4e23369dd76e74f948c0a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/Mechanism of Thermal Atomic Layer Etch of W Metal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":519,"height":203,"image_format":"jpeg","image_sha256":"c37da949e97122448a78ac4bb8b2e887fcaf129ca0be2ff71e0530558b1edf55","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_10_figure_4.jpg","caption":"Figure 4. Relaxed geometries showing the non-volatile (dissociative) adsorption of $\\mathrm{WCl}_6$ on the O-covered W surface. The values in red indicate an energy cost, and the values in green indicate a gain in energy at $0\\mathrm{K}$ . The values above (or left of) the arrow are the energy change with respect to the preceding configuration, while the values below (or right of) the arrow are the energy change with respect to geometry A (cumulative energy change). In geometry A, $\\mathrm{WCl}_6$ is intact, and in geometries B, C, D, and E, the molecule is in the dissociated state. The reference gas phase molecule used for the binding energy calculation is $\\mathrm{WCl}_6$ .","id":"test/atomic-layer-etching/simulation-usecase/10/figure_4","sample_id":"atomic-layer-etching/simulation-usecase/10/figure_4","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":564,"height":392}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/Mechanism of Thermal Atomic Layer Etch of W Metal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":564,"height":392,"image_format":"jpeg","image_sha256":"67982243c823bbe8c9f51c801d43f799f5c71acdf8a7dadd62197f4f60c27a31","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_10_figure_5.jpg","caption":"Figure 5. Energy requirements for the removal of volatile species from geometry C and E from Figure 4. The values in red indicate a moderate energy cost, and the values in green indicate a gain in energy. The values above the arrow are the desorption energies of the respective volatile species, while the values below are the free energy change of desorption at $500\\mathrm{K}$ . The desorbed molecules are either $\\mathrm{WOCl_4}$ or $\\mathrm{WO}_2\\mathrm{Cl}_2$ .","id":"test/atomic-layer-etching/simulation-usecase/10/figure_5","sample_id":"atomic-layer-etching/simulation-usecase/10/figure_5","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":475}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/Mechanism of Thermal Atomic Layer Etch of W Metal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":669,"height":475,"image_format":"jpeg","image_sha256":"a84cfc3a4073f54aa7d5ea20a1f76a9ebc19b8af2dd9ffdd1b52d33b41262c57","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_10_figure_6.jpg","caption":"Figure 6. Minimum energy geometries showing the non-volatile adsorption of $2\\mathrm{WCl}_6$ on the O-covered W surface and energies needed to remove volatile species from them. The values in red indicate energy loss, and the values in green indicate energy gain. The values above the arrow are the desorption energies of the respective volatile species, while the values below are the free energy change of desorption at $500\\mathrm{K}$ .","id":"test/atomic-layer-etching/simulation-usecase/10/figure_6","sample_id":"atomic-layer-etching/simulation-usecase/10/figure_6","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":589,"height":522}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/Mechanism of Thermal Atomic Layer Etch of W Metal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":589,"height":522,"image_format":"jpeg","image_sha256":"50f64e1e5d327c0f944448b07894cbc68fe898d6c6759d4dd55a6a021a6b0003","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_10_figure_7.jpg","caption":"Figure 7. Panel (A) shows a schematic representation of an idealized W ALE cycle. The energies of the individual steps are listed in Table 2. Atom color coding is as follows: $\\mathrm{W} =$ gray, $\\mathrm{O} =$ red, and $\\mathrm{Cl} =$ green. Step 1 depicts the initial functionalization of the surface with the desired oxidant. Step 2 describes the purging of the excess oxidant from the reaction chamber. Step 3 describes the introduction of $\\mathrm{WCl}_6$ , which exhibits no spontaneous dissociation until elevated temperatures. Step 4 depicts the liberation of volatile $\\mathrm{WO}_x\\mathrm{Cl}_y$ species as the most likely etch species. Step 5 in an idealized system results in the repassivation of the surface leading into the next cycle and is thus labeled as equivalent to step 1. Additional passivated surface post etch is shown in panel (B). $\\mathrm{WCl}_x$ terminated surface is discussed in detail in Figure 8.","id":"test/atomic-layer-etching/simulation-usecase/10/figure_7","sample_id":"atomic-layer-etching/simulation-usecase/10/figure_7","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":7,"y":3,"width":655,"height":760},{"panel_id":"b","x":681,"y":23,"width":260,"height":716}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/Mechanism of Thermal Atomic Layer Etch of W Metal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":944,"height":764,"image_format":"jpeg","image_sha256":"5bd628440964055f056748964c65fb387ef653a796c42f69d5f77bbd85a1cd4f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_10_figure_8.jpg","caption":"Figure 8. Interaction of $\\mathrm{O}_2$ on the Cl-covered W surface, which is identified as one of the possible surface terminations at the end of the ALE cycle in Figure 7. In case (a), six intact $\\mathrm{O}_2$ molecules are adsorbed on the surface with $0\\mathrm{eV} / \\mathrm{O}_2$ . In (b) and (c), $12\\mathrm{O}$ atoms (six dissociated $\\mathrm{O}_2$ molecules) are adsorbed close to surface W and close to Cl atoms with a release of $-4.8$ and $-0.5\\mathrm{eV} / \\mathrm{O}_2$ , respectively. The color coding is as follows: $\\mathrm{W} =$ gray, $\\mathrm{O} =$ red, and $\\mathrm{Cl} =$ green.","id":"test/atomic-layer-etching/simulation-usecase/10/figure_8","sample_id":"atomic-layer-etching/simulation-usecase/10/figure_8","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":456,"height":717}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/10/Mechanism of Thermal Atomic Layer Etch of W Metal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":456,"height":717,"image_format":"jpeg","image_sha256":"7de7198dc8d6cb284b6f0f5c491fc51f2973f6044d4f433b395a2a4143ec2ad3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_9583e752bfcd62ec9f2a41b96837cb7c6d0f1ac31bdfb420e1487bf6954cbf86.jpg","caption":"Table 3-Reaction mechanism for Step B.","id":"test/atomic-layer-etching/simulation-usecase/11/9583e752bfcd62ec9f2a41b96837cb7c6d0f1ac31bdfb420e1487bf6954cbf86","sample_id":"atomic-layer-etching/simulation-usecase/11/9583e752bfcd62ec9f2a41b96837cb7c6d0f1ac31bdfb420e1487bf6954cbf86","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image illustrates a reaction pathway with molecular structures labeled B0 through B6. Each step is accompanied by forward and reverse activation energies (Ea) in electron volts (eV).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction pathwayb | Forward | Reverse |\\n| --- | --- | --- |\\n| B0 | NAa | 42.27 |\\n| B1 | 1.45 | – |\\n| B2 | NAa | – |\\n| B3 | NAa | – |\\n| B4 | NAa | 21.29 |\\n| B5 | 0.82 | – |\\n| B6 | NAa | – |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the B0 to B1 transition, a trimethylaluminum (TMA) molecule adsorbs onto the fluorinated Al2O3 surface by binding to a fluorine atom. Simultaneously, one of the AlF2 groups dissociates from a fluorine atom, which transfers to a neighboring aluminum. This adsorption step has no calculated forward activation energy (proceeds via collision theory kinetics) but has a very high reverse barrier of 42.27 eV, making TMA desorption essentially irreversible under process conditions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Red atoms are oxygen, gray atoms are aluminum, green atoms are fluorine, blue atoms are carbon, and white atoms are hydrogen.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The high reverse barriers (21-42 eV) reflect the strong thermodynamic driving force for TMA to react with the fluorinated surface and release volatile DMAF, making these reactions essentially irreversible.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Dimethylaluminum fluoride (DMAF) is formed when TMA exchanges a methyl group for a fluorine atom, and its volatility drives the etching process forward.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":-1,"width":1355,"height":1927}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/9583e752bfcd62ec9f2a41b96837cb7c6d0f1ac31bdfb420e1487bf6954cbf86.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/9583e752bfcd62ec9f2a41b96837cb7c6d0f1ac31bdfb420e1487bf6954cbf86.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:table_caption"},"width":1375,"height":1944,"image_format":"jpeg","image_sha256":"e9ae94f77237a0b3134a8c50e2285740b295260981e6eb693e3b5cf4c85ece2f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_bab33ac6df6108abed34da44122aef20e0ca779868fbf1b12fc7a1851c078850.jpg","caption":"Table 2-Reaction mechanism for Step A.","id":"test/atomic-layer-etching/simulation-usecase/11/bab33ac6df6108abed34da44122aef20e0ca779868fbf1b12fc7a1851c078850","sample_id":"atomic-layer-etching/simulation-usecase/11/bab33ac6df6108abed34da44122aef20e0ca779868fbf1b12fc7a1851c078850","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image illustrates a reaction pathway with molecular structures labeled A0 through A5. Each step is accompanied by forward and reverse activation energies (Ea) in electron volts (eV).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Dissociative adsorption of HF onto the surface (A0→A1), diffusion of adsorbed hydrogen atoms (A1↔A2), surface reaction forming H2O when two H atoms are adjacent (A3↔A4), and desorption of the H2O molecule (A4→A5).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The H2O formation step (A3→A4) has the highest forward activation energy at 1.28 eV, making it the rate-limiting surface reaction.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The single arrow indicates that H2O desorption is treated as irreversible in the model. Once water molecules are released from the surface, they are removed from the system during the subsequent purge step and do not re-adsorb. In contrast, double arrows for other steps indicate reversible reactions where both forward and reverse processes can occur, as reflected by the listed forward and reverse activation energies.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The activation energies were calculated using the nudged elastic band (NEB) method implemented in Quantum ESPRESSO, which finds minimum energy paths between optimized reactant and product structures.\"}]}]","bbox":[{"panel_id":"a","x":9,"y":12,"width":1368,"height":1259}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/bab33ac6df6108abed34da44122aef20e0ca779868fbf1b12fc7a1851c078850.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/bab33ac6df6108abed34da44122aef20e0ca779868fbf1b12fc7a1851c078850.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:table_caption"},"width":1386,"height":1275,"image_format":"jpeg","image_sha256":"43845766ff9a5a2f382f5fca4c7c5054cd03c9f56c11e4d5bbe040460ae65a74","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_caaec1bed07e19806910baf7c50bd9bbccede0b96bb8412e3edcb996031c89bd.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/11/caaec1bed07e19806910baf7c50bd9bbccede0b96bb8412e3edcb996031c89bd","sample_id":"atomic-layer-etching/simulation-usecase/11/caaec1bed07e19806910baf7c50bd9bbccede0b96bb8412e3edcb996031c89bd","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Final step of the Step B reaction mechanism showing the B6→B7 transition where the volatile DMAF molecule bound to the r-AlF3 site desorbs, removing an aluminum atom from the substrate. This propagation step has a forward activation energy of 1.12 eV and is irreversible. The footnotes clarify that adsorption rate constants are calculated by Collision Theory rather than NEB, and provide the atom color legend (red=O, gray=Al, green=F, blue=C, white=H).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After DMAF desorbs in the B6→B7 step, an aluminum atom is removed from the Al2O3 substrate, completing the etching at the r-AlF3 site. A neighboring fluorine atom then attaches to the remaining l-AlF2 site to form l-AlF3, which can subsequently be removed through further TMA reactions. This is the propagation step that enables continued etching across the surface.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The forward activation energy for the B6→B7 transition is 1.12 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"\\\"NA\\\" indicates that those steps involve adsorption or physisorption, for which rate constants are calculated using Collision Theory rather than the NEB method used for surface reactions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dash indicates the reverse reaction is not considered in the model because DMAF is highly volatile and immediately removed from the system, making re-adsorption negligible under process conditions.\"}]}]","bbox":[{"panel_id":"a","x":10,"y":52,"width":1375,"height":434}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/caaec1bed07e19806910baf7c50bd9bbccede0b96bb8412e3edcb996031c89bd.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/caaec1bed07e19806910baf7c50bd9bbccede0b96bb8412e3edcb996031c89bd.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":1386,"height":489,"image_format":"jpeg","image_sha256":"d94a81b7ddf24018ac63d556e4c972ca31ef2427faadb7ae0ea84c4f6df9cadd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_21_figure_2.jpg","caption":"Figure 2. Simplified cartoon of directional Si ALE showing Steps A (modification of surface via chlorination to form $\\mathrm{SiCl}_{x}$ ) and B (desorption of the modified layer via Ar ion energy). The data shows self-limiting removal of the chlorinated Si layer in Step B at $50 \\mathrm{eV}$ as a function of step time.","id":"test/atomic-layer-etching/simulation-usecase/21/figure_2","sample_id":"atomic-layer-etching/simulation-usecase/21/figure_2","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":5,"width":569,"height":222},{"panel_id":"b","x":31,"y":286,"width":503,"height":330}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/21/Review Paper -- Atomic Layer Etching Rethinking the Art of Etch.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":578,"height":630,"image_format":"jpeg","image_sha256":"2d708118c28f188d35631d9a42e10e9b24a37ceeecf900d30795f232f0f56795","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_7_5df46ecd78fb58ba7811704a7b8b077622b705ee48a6af9e1a864efeb9785ead.jpg","caption":"G.5. t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t h","id":"test/atomic-layer-etching/simulation-usecase/7/5df46ecd78fb58ba7811704a7b8b077622b705ee48a6af9e1a864efeb9785ead","sample_id":"atomic-layer-etching/simulation-usecase/7/5df46ecd78fb58ba7811704a7b8b077622b705ee48a6af9e1a864efeb9785ead","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1078,"height":753}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/5df46ecd78fb58ba7811704a7b8b077622b705ee48a6af9e1a864efeb9785ead.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/5df46ecd78fb58ba7811704a7b8b077622b705ee48a6af9e1a864efeb9785ead.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/In silico design of a thermal atomic layer etch process of cobalt.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1078,"height":753,"image_format":"jpeg","image_sha256":"6633c0b272a6fb83baf09bb61260a525aab0bb8111f46a289a23f780df44e69f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_7_fig_1.jpg","caption":"FIG. 1. Graphical representation of the steps involved in the computer aided discovery of a new thermal atomic layer etch process.","id":"test/atomic-layer-etching/simulation-usecase/7/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/7/fig_1","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":428}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/In silico design of a thermal atomic layer etch process of cobalt.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":675,"height":428,"image_format":"jpeg","image_sha256":"56f494d5a48cdbb3ddbe6e4514b99831eb3fa082a785f36ba1fe0bf572959950","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_7_fig_2.jpg","caption":"FIG. 2. Schematic representation of the ideal thermal atomic layer etch process for Co.","id":"test/atomic-layer-etching/simulation-usecase/7/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/7/fig_2","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":670,"height":406}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/In silico design of a thermal atomic layer etch process of cobalt.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":670,"height":406,"image_format":"jpeg","image_sha256":"e8eb3597e362d9962f45c73de89f4b20a4873d476d5db682a71c71d5c2677af8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_7_fig_3.jpg","caption":"FIG. 3. Chemical formulas and structures of the target volatile species and first pulse chemicals.","id":"test/atomic-layer-etching/simulation-usecase/7/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/7/fig_3","subset":"reaction-scheme","split":"test","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1056,"height":1036}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/7/In silico design of a thermal atomic layer etch process of cobalt.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1056,"height":1036,"image_format":"jpeg","image_sha256":"a2b92eaa0bc25539f53962d63455a75bd8750246ef2188e82040da5f57117b68","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/reaction-scheme/train/metadata.jsonl b/subsets/reaction-scheme/train/metadata.jsonl index 6e8b0e38d4ada99af9f31a01e13677f038a0904c..9e374e6b49f052c5118a448a9ab32a259d84e502 100644 --- a/subsets/reaction-scheme/train/metadata.jsonl +++ b/subsets/reaction-scheme/train/metadata.jsonl @@ -1,75 +1,75 @@ -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_25_f0c41f11e9c5ab863fee1ff70b7d7442935b0ee8edf971cfbc7285ccc6107b34.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/25/f0c41f11e9c5ab863fee1ff70b7d7442935b0ee8edf971cfbc7285ccc6107b34","sample_id":"atomic-layer-deposition/experimental-usecase/25/f0c41f11e9c5ab863fee1ff70b7d7442935b0ee8edf971cfbc7285ccc6107b34","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/f0c41f11e9c5ab863fee1ff70b7d7442935b0ee8edf971cfbc7285ccc6107b34.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/f0c41f11e9c5ab863fee1ff70b7d7442935b0ee8edf971cfbc7285ccc6107b34.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/Adam Hultqvist et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":839,"height":253,"image_format":"jpeg","image_sha256":"bd5656f8e0dcbd6f3d77322b2e1cdf82c5fec774ef2830996d548e58f3b56a30","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":603,"y":17,"width":234,"height":233},{"panel_id":"b","x":312,"y":13,"width":287,"height":240},{"panel_id":"a","x":5,"y":10,"width":306,"height":244}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A reaction scheme illustrating the synthesis of Sn1-xGexOy or Zn1-xGexOy Electron Selective Layer (ESL) by ALD\"},{\"panel_id\":\"b\",\"text\":\"A line chart showing the optical absorption of Ge doped electron selective layer as a function of energy\"},{\"panel_id\":\"c\",\"text\":\"A line chart depicting the solar cell efficiency of Sn1-xGexOy and Zn1-xGexOy as a function of Ge content of ESL.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Process Step | Description |\\n|--------------------------------------|--------------------------------------------------|\\n| Precursors | Ge(N(CH₃)₂)₄ and Sn(N(CH₃)₂)₄ or Zn(C₂H₅)₂ |\\n| Reactant | H₂O |\\n| Deposited Layer | Sn₁₋ₓGeₓOᵧ or Zn₁₋ₓGeₓOᵧ (Electron Selective Layer, ESL) |\\n| Substrate | (Ag, Cu)(In, Ga)Se₂ |\\n| Method | Atomic Layer Deposition (ALD) Supercycle |\"},{\"panel_id\":\"b\",\"text\":\"| Ge Content in ESL | Optical Absorption Shift |\\n|--------------------|---------------------------|\\n| Low | Lower absorption edge |\\n| High | Higher absorption edge |\"},{\"panel_id\":\"c\",\"text\":\"| Ge Content in ESL | Sn₁₋ₓGeₓOᵧ Efficiency | Zn₁₋ₓGeₓOᵧ Efficiency |\\n|--------------------|--------------------------|--------------------------|\\n| Low | Moderate | Low |\\n| Medium | Peak | Increasing |\\n| High | Decline | Peak |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the ALD supercycle approach, the GeOy ALD cycle was interchanged with either ZnO or SnOy cycles to deposit TGO and ZGO with varying conduction\\nband positions (Ec), respectively\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To ensure (Ag,Cu)(In,Ga)Se2 (ACIGS) solar cell compatibility, a 120 °C ALD process was developed for GeOy using Ge(N(CH3)2)4 and H2O as precursors.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The open-circuit voltage initially increased as the Ge content of the TGO and ZGO films increased due to the ESL Ec simultaneously shifting up from the low position in ZnO or SnOy to match the ACIGS Ec. As the Ge content increased further, the fill factor (FF) of these devices decreased since the ESL Ec became positioned significantly above the ACIGS Ec, forming an energy barrier as seen from ACIGS. As a result, the efficiency of the ACIGS solar cell peaked for an intermediate Ge content for both TGO and ZGO\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_2.jpg","caption":"Figure 2. (a) Proposed deposition mechanism of GeSe films from $\\mathrm{HGeCl}_3$ and $\\mathrm{GeCl}_2$ with $\\mathrm{HCl}$ on the film surface. (b)-(e) Saturation behavior in the conventional ALD through the Ge and Se precursors' pulse and purge time split.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_2","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"multi-axis chart"},{"panel_id":"d","label":"multi-axis chart"},{"panel_id":"e","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":1058,"height":1767,"image_format":"jpeg","image_sha256":"98e18f157a91d4e377d972288f0801c896234288acee840b0a9d0c8f198abfe4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":84,"y":15,"width":858,"height":777},{"panel_id":"b","x":11,"y":900,"width":515,"height":397},{"panel_id":"c","x":540,"y":902,"width":517,"height":395},{"panel_id":"d","x":3,"y":1364,"width":526,"height":395},{"panel_id":"e","x":549,"y":1366,"width":504,"height":398}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_34_8c119476fea7a631497f281ecf723864f30e6219a21cd174c4df5d827beff926.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/34/8c119476fea7a631497f281ecf723864f30e6219a21cd174c4df5d827beff926","sample_id":"atomic-layer-deposition/experimental-usecase/34/8c119476fea7a631497f281ecf723864f30e6219a21cd174c4df5d827beff926","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/8c119476fea7a631497f281ecf723864f30e6219a21cd174c4df5d827beff926.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/8c119476fea7a631497f281ecf723864f30e6219a21cd174c4df5d827beff926.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/M. J. Pieters et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":561,"height":311,"image_format":"jpeg","image_sha256":"aa2a31dbe3714451b141528b2fbbf816a9862cf4630ae05b9ee321a2b6a2ef5d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":561,"height":311}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_34_figure_4.jpg","caption":"Figure 4. Schematics of the reaction mechanisms occurring during the (a) LiHMDS + $\\mathrm{O}_2^*$ , (b) LiHMDS + $\\mathrm{H}_2\\mathrm{O}$ , (c) LiHMDS + $\\mathrm{O}_2^*$ + $\\mathrm{H}_2^*$ , and (d) LiHMDS + $\\mathrm{H}_2^*$ + $\\mathrm{O}_2^*$ processes.","id":"train/atomic-layer-deposition/experimental-usecase/34/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/34/figure_4","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"},{"panel_id":"d","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/M. J. Pieters et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":1164,"height":1170,"image_format":"jpeg","image_sha256":"ec274ce22df3f5b5250bba18aa26f5abc0bbe2e484432068ba1236eb4d1c7695","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":8,"width":553,"height":483},{"panel_id":"b","x":610,"y":10,"width":547,"height":492},{"panel_id":"c","x":6,"y":521,"width":570,"height":643},{"panel_id":"d","x":600,"y":517,"width":552,"height":641}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_50_fig_1.jpg","caption":"Fig. 1 A schematic representation of two ALD supercycles used to dope the $\\mathrm{ZnO}$ films with a doping element, $\\mathbf{X}$ $\\mathbf{X} = \\mathbf{Al}$ , B, Ga, etc.). For uniform doping, a constant value of $m$ is used $(m_{1} = m_{2} = \\dots = m_{n})$ whereas for films with graded doping, the value of $m$ can be varied. Details of the ALD processes are shown in the lower part of the figure: the process for the $\\mathrm{ZnO}$ based material comprises two half-cycles in which DEZ and $\\mathrm{H}_2\\mathrm{O}$ are dosed; in most cases, the ALD process of the doping material also comprises two doses: dopant precursor dosing and $\\mathrm{H}_2\\mathrm{O}$ dosing. Other co-reactants such as $\\mathrm{O}_3$ or $\\mathrm{O}_2$ plasma can also be employed instead of $\\mathrm{H}_2\\mathrm{O}$ , for both the $\\mathrm{ZnO}$ and the doping element.","id":"train/atomic-layer-deposition/experimental-usecase/50/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/50/fig_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/Garcia-Alonso et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":1089,"height":514,"image_format":"jpeg","image_sha256":"2c359cbda0ff9dafe2a8bed57dd7ba8cbedd4bed959c64bbdb6019b0fc9233d5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":4,"width":1083,"height":506}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a supercycle reaction scheme involving ZnO and doping element X, with labeled cycles and time intervals.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Step | ZnO Cycle | Dopant Cycle |\\n|------------|----------------------|----------------------|\\n| Precursor | DEZ | X |\\n| Reactant | H₂O | H₂O |\\n| Purge | Purge | Purge |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In principle, the concept of supercycle is effective when the two individual ALD processes (i.e., the base material ALD process and the dopant ALD process) are compatible with each other. Additionally, the ALD supercycle should be in saturation when the two individual ALD processes are in saturation.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"To dope ZnO with boron, it is not necessary to form B2O3 as long as the precursor is able to incorporate B into ZnO films.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The parameters of the ALD process for the B dopant were tuned during the ZnO doping ALD process at 150 ° C using a supercycle with m = 4 (i.e., 5 cycles consisting of 4 ZnO + 1 TIB) and using the already optimised ZnO ALD process parameters (50 ms DEZ dose, 5 s purge, 20 ms H2O dose, 6 s purge).\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_66_0f17ce2d6089bb35707b890f75e18e79f6625a556ecf2ad207b3d1cf06f22559.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/66/0f17ce2d6089bb35707b890f75e18e79f6625a556ecf2ad207b3d1cf06f22559","sample_id":"atomic-layer-deposition/experimental-usecase/66/0f17ce2d6089bb35707b890f75e18e79f6625a556ecf2ad207b3d1cf06f22559","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"bar chart"},{"panel_id":"c","label":"bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/0f17ce2d6089bb35707b890f75e18e79f6625a556ecf2ad207b3d1cf06f22559.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/0f17ce2d6089bb35707b890f75e18e79f6625a556ecf2ad207b3d1cf06f22559.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/Paskaleva et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"66","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":1067,"height":339,"image_format":"jpeg","image_sha256":"c6cd3cc3a3a4082adef641bb09a84581a808e7c64a8c6b9b65d08d9e52c46681","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":8,"width":330,"height":330},{"panel_id":"b","x":335,"y":8,"width":342,"height":151},{"panel_id":"c","x":335,"y":161,"width":343,"height":178}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A molecular structure diagram illustrating the ALD cycle involving ZnO:TMO and its precursors.\"},{\"panel_id\":\"b\",\"text\":\"A scatter plot showing the statistical distribution of θ_Kerr for ALD ZnO:Fe.\"},{\"panel_id\":\"c\",\"text\":\"P-V hysteresis loop for ZnO:Fe\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Material | Relative frequency (%) | 01000 mdeg |\\n|---|---|---|---|----|\\n| ALD ZnO | 100% | - | - | - |\\n|ALD ZnO:Fe | - | 45% | 22% | 33% |\"},{\"panel_id\":\"c\",\"text\":\"| Applied Voltage (V) | P (µC/cm²) |\\n|---|---|\\n|-3 |-40 |\\n|-2 |-30 |\\n|-1 |-20 |\\n|0 |-10 |\\n|1 |0 |\\n|2 |10 |\\n|3 |20 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ZnO doped with transition metals (Co, Fe, or Ni) that have non-compensated electron spins attracts particular\\ninterest as it can induce various magnetic phenomena and behaviors\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"From the results it is observed that Fe-doped ZnO also demonstrates a ferroelectric behavior.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The present study provides an extended analysis of the magnetooptical MO Kerr effect and the dielectric properties of (Co, Fe, or Ni)-doped ZnO films prepared by ALD. The structural, magnetooptical, and dielectric properties were considered in relation to the technological details of the ALD process and the corresponding dopant effects. All doped samples show a strong MO Kerr behavior with a substantial magnetization response and very high values of the Kerr polarization angle, especially in the case of ZnO/Fe\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_12_ca270fa3709113a73088b324c42da03af3f4bbe859c7b315f3935c584adc29f0.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/12/ca270fa3709113a73088b324c42da03af3f4bbe859c7b315f3935c584adc29f0","sample_id":"atomic-layer-deposition/simulation-usecase/12/ca270fa3709113a73088b324c42da03af3f4bbe859c7b315f3935c584adc29f0","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/ca270fa3709113a73088b324c42da03af3f4bbe859c7b315f3935c584adc29f0.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/ca270fa3709113a73088b324c42da03af3f4bbe859c7b315f3935c584adc29f0.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. Mukhopadhyay et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":884,"height":483,"image_format":"jpeg","image_sha256":"d0771ea8964d8061682ac3a1b49755589cb2e63d6c69d73484ed64e3adaf7cfe","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":6,"width":876,"height":475}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_12_dbca0f677b67a8938436513d8ced215c871203961972b5ccd0382c672ee5f0fe.jpg","caption":"Scheme 2. Cascade of Reactions Occurring from the Aquo-trichloro-hafnium Complexa","id":"train/atomic-layer-deposition/simulation-usecase/12/dbca0f677b67a8938436513d8ced215c871203961972b5ccd0382c672ee5f0fe","sample_id":"atomic-layer-deposition/simulation-usecase/12/dbca0f677b67a8938436513d8ced215c871203961972b5ccd0382c672ee5f0fe","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/dbca0f677b67a8938436513d8ced215c871203961972b5ccd0382c672ee5f0fe.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/dbca0f677b67a8938436513d8ced215c871203961972b5ccd0382c672ee5f0fe.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. Mukhopadhyay et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":925,"height":900,"image_format":"jpeg","image_sha256":"5b5def0c4d2563b977b44e095db03f1af7b30f40e4aa69b6f7d31270bba8d63e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":2,"width":917,"height":896}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_15_4d4f406e9932876c1e7d842c8a2c6e5c2ea735e3033a559de968675a1eb78e85.jpg","caption":"Scheme 1. The fourteen pathways of the four chlorine loss reactions. The first chlorine loss reactions (R1a and R2b), the second chlorine loss reactions (R2a, R2b, R3a, R3b), the third chlorine loss reactions (R4a, R4b, R5a, R5b) and the fourth chlorine loss reactions (R6a, R6b, R7a, R7b).","id":"train/atomic-layer-deposition/simulation-usecase/15/4d4f406e9932876c1e7d842c8a2c6e5c2ea735e3033a559de968675a1eb78e85","sample_id":"atomic-layer-deposition/simulation-usecase/15/4d4f406e9932876c1e7d842c8a2c6e5c2ea735e3033a559de968675a1eb78e85","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/4d4f406e9932876c1e7d842c8a2c6e5c2ea735e3033a559de968675a1eb78e85.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/4d4f406e9932876c1e7d842c8a2c6e5c2ea735e3033a559de968675a1eb78e85.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/Chengxing Cui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1397,"height":681,"image_format":"jpeg","image_sha256":"de36780e0e2f2698c7dd44b4a4e78a47f652c60bf531ebf0e6f5afd9f206d73a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":8,"width":504,"height":573},{"panel_id":"b","x":504,"y":1,"width":889,"height":676}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_23_fig2.jpg","caption":"Fig.2 Schematic of the reaction process of $\\mathrm{AlO}_x$ ALD.","id":"train/atomic-layer-deposition/simulation-usecase/23/fig2","sample_id":"atomic-layer-deposition/simulation-usecase/23/fig2","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/Jiaqiang Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":653,"height":378,"image_format":"jpeg","image_sha256":"e0473ee6932133beb71da3a6143f4b3f608b6d76d329bcae1f52fd3683a7c148","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":650,"height":376}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_23_fig_4.jpg","caption":"Fig. 4 Diagram of the elementary reaction steps of Scheme 1.","id":"train/atomic-layer-deposition/simulation-usecase/23/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/23/fig_4","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/Jiaqiang Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":650,"height":314,"image_format":"jpeg","image_sha256":"76aae8f598d1c610563186f37da147cb573370b5b4b67d629b6aed95ea967652","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":643,"height":311}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_23_fig_7.jpg","caption":"Fig. 7 (a) Schematic of DMAI decomposition; (b) $\\mathsf{AlO}_x$ deposition rates on different Pt sites at $300 - 425\\mathrm{K}$ .","id":"train/atomic-layer-deposition/simulation-usecase/23/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/23/fig_7","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/Jiaqiang Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":652,"height":314,"image_format":"jpeg","image_sha256":"0cf4186d0654784e022a7d9a6943c8a2540245b74c62c0a2edd2cb55ceb7059d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":4,"width":233,"height":309},{"panel_id":"b","x":240,"y":3,"width":408,"height":309}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_25_figure_1.jpg","caption":"Figure 1. TMA reaction pathways (adapted from Travis and Adomaitis $^{34}$ ).","id":"train/atomic-layer-deposition/simulation-usecase/25/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/25/figure_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"},{"panel_id":"d","label":"reaction scheme"},{"panel_id":"e","label":"reaction scheme"},{"panel_id":"f","label":"reaction scheme"},{"panel_id":"g","label":"reaction scheme"},{"panel_id":"h","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/Kristopher S. Brown et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":622,"height":969,"image_format":"jpeg","image_sha256":"3aeae4f9eab03561786dc1266f5283044da52feca5e865fe10fa0113c5f6a440","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":496,"height":112},{"panel_id":"b","x":1,"y":115,"width":538,"height":121},{"panel_id":"c","x":1,"y":235,"width":618,"height":129},{"panel_id":"d","x":2,"y":365,"width":562,"height":132},{"panel_id":"e","x":2,"y":484,"width":611,"height":137},{"panel_id":"f","x":6,"y":618,"width":528,"height":126},{"panel_id":"g","x":10,"y":746,"width":553,"height":118},{"panel_id":"h","x":9,"y":868,"width":612,"height":97}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_27_figure_4.jpg","caption":"Figure 4. Elementary surface reactions during PEALD deposition of $\\mathrm{SiO_2}$ film using a bis-diethylaminosilane (BDEAS) precursor. P1 and P2 are products of the precursor deposition. S1 and S2 are products of the plasma pulse.","id":"train/atomic-layer-deposition/simulation-usecase/27/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/27/figure_4","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/Martin Becker et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":964,"height":552,"image_format":"jpeg","image_sha256":"793a8a8b60928a82410ec61065c416c6098be5617ec82aefb71b0911d8ebf6f4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":964,"height":552}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure depicts the elementary surface reactions occurring during PEALD of SiO₂ using the bis-diethylaminosilane (BDEAS) precursor. It shows precursor adsorption and ligand-exchange reactions that form intermediates P1 and P2, followed by plasma-activated reactions producing S1 and S2. Together, these steps represent the precursor half-cycle and plasma half-cycle in the overall PEALD mechanism.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"These elementary reactions reveal how the BDEAS precursor interacts with surface hydroxyls and how plasma activation removes remaining ligands to regenerate reactive sites. Understanding each step—precursor adsorption, ligand exchange, and plasma clean-up—is essential for controlling film composition, minimizing impurities, and optimizing the self-limiting growth characteristic of PEALD. The intermediates P1, P2, S1, and S2 provide insight into how the surface evolves during each half-cycle, directly influencing film quality and growth per cycle.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"P1 and P2.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ligand exchange of –NEt₂ groups, Formation of Si–O surface bonds, Generation of P1 and P2 intermediates, Cleavage of residual ligands during plasma exposure, Formation of S1 and S2 surface species\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_28_fig1.jpg","caption":"Fig.1.Reaction steps of $\\mathrm{MO}_2$ film growth in the ALD process: (1a) the formation of a chemisorbed $\\mathrm{MCl}_3$ group,1b the formation of a chemisorbed $\\mathrm{MCl}_2$ group,2a the hydrolysis of the first M-Cl bond in a chemisorbed $\\mathrm{MCl}_2$ group, and (2b) the hydrolysis of the second M-Cl bond in a chemisorbed $\\mathrm{MCl}_2$ group.","id":"train/atomic-layer-deposition/simulation-usecase/28/fig1","sample_id":"atomic-layer-deposition/simulation-usecase/28/fig1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/Maxim Deminsky et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":580,"height":411,"image_format":"jpeg","image_sha256":"a007f81d64e4d0d81f8dcdac23d108f7116cc030ef5134127c4342360ff2e2d8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":4,"width":575,"height":193},{"panel_id":"b","x":5,"y":204,"width":576,"height":205}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_28_fig2.jpg","caption":"Fig.2.Water desorption reaction.","id":"train/atomic-layer-deposition/simulation-usecase/28/fig2","sample_id":"atomic-layer-deposition/simulation-usecase/28/fig2","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/Maxim Deminsky et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":445,"height":150,"image_format":"jpeg","image_sha256":"51ff29bc58514a229c9e5b476b73b0722ee1f35d1215f9c961b4f741ecccb556","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":3,"width":434,"height":145}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_28_fig_4.jpg","caption":"Fig. 4. Schematic reaction path profile of the gas-surface reactions via a strongly adsorbed precursor $\\mathrm{AB / s / }$ (a) decomposition of $\\mathrm{AB / s / }$ to products $\\mathrm{C / s / }$ and $\\mathrm{D}$ proceeds via a rigid transition complex; (b) decomposition via a loose transition complex. $\\mathrm{TC_{ad}}$ and $\\mathrm{TC_f}$ are transition complexes for adsorption of $\\mathrm{B}$ at $\\mathrm{A / s / }$ and for $\\mathrm{AB / s / }$ decomposition to products $\\mathrm{C / s / }$ and $\\mathrm{D}$","id":"train/atomic-layer-deposition/simulation-usecase/28/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/28/fig_4","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/Maxim Deminsky et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":914,"height":370,"image_format":"jpeg","image_sha256":"00e8e6f57b7ace2cf7ebf7bffa3554a4c64d991784b32786c1c3cbb849ca6a65","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":11,"y":8,"width":419,"height":362},{"panel_id":"b","x":474,"y":8,"width":440,"height":362}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a reaction pathway. B+A/s/ transformed into AB/s/ after energy Ead is released. A transition state is reached after a energy barrier is overcome releasing D+C/s/.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates a reaction pathway. B+A/s/ transformed into AB/s/ after energy Ead is released. A transition state is reached after enough energy is added to the system, releasing D+C/s/.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|qr|Urp|\\n|---|---|\\n|B+A/s/|0|\\n|AB/s/|-Ead|\\n|TCf|-Ef|\\n|D+C/s/|-Er|\"},{\"panel_id\":\"b\",\"text\":\"|qr|Urp|\\n|---|---|\\n|B+A/s/|0|\\n|AB/s/|-Ead|\\n|D+C/s/|Er|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The required energy is Ead-Ef. This energy can be applied by first setting a certain table temperature.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After the transition state has been reached, reaction products D will be formed, leaving the C/s surface.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ead.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"C/s\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_4681214406d9cc366cad55f679603fc12f8cb43075cdabef079cf5f2a46c2e8b.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/30/4681214406d9cc366cad55f679603fc12f8cb43075cdabef079cf5f2a46c2e8b","sample_id":"atomic-layer-deposition/simulation-usecase/30/4681214406d9cc366cad55f679603fc12f8cb43075cdabef079cf5f2a46c2e8b","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/4681214406d9cc366cad55f679603fc12f8cb43075cdabef079cf5f2a46c2e8b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/4681214406d9cc366cad55f679603fc12f8cb43075cdabef079cf5f2a46c2e8b.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":658,"height":322,"image_format":"jpeg","image_sha256":"e95beacf3da62c6ec5531cc7e77a07a590a60e71aa338aa8f202cdea1f187d3c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":6,"width":654,"height":174},{"panel_id":"b","x":83,"y":186,"width":482,"height":135}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This subfigure shows the formation of a triply bonded (TB) TMPS configuration on amorphous silica. Three surface silanol groups react with TMPS, releasing three methanol molecules and forming a TB SMI with Si−O linkages. The right step shows conceptual removal of the SMI (−SiPr) and hydrogen saturation (+3 H•) to generate the \\\"TB residue\\\" structure for energy calculations.\"},{\"panel_id\":\"b\",\"text\":\"This subfigure illustrates how the TB bonding penalty (ΔE_TB-pen) is calculated: the energy difference between the \\\"Relaxed Model\\\" (pristine optimized surface) and the \\\"TB Residue\\\" (surface geometry after TB SMI removal). This quantifies the strain introduced into the silica framework by TB bonding.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TB bonding penalty quantifies the energetic cost of deforming the silica surface when three silanols must reposition to bond to a single TMPS molecule. By comparing the TB residue energy to the relaxed surface, researchers isolate how much of the total reaction energy arises from surface strain. This is critical for predicting which TB configurations are thermodynamically accessible under ALD conditions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A.1-O:123 has a penalty of only 45 kJ mol⁻¹, while A.1-O:146 shows 162 kJ mol⁻¹ and A.1-O:245 exhibits 459 kJ mol⁻¹, indicating TB formation is highly site-specific.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dashed lines represent hydrogen bonds between adjacent surface silanol groups, which form a network that stabilizes the silica surface structure.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The TB configuration consumes all three methoxy groups, maximizing chemical passivation and reducing potential nucleation sites for Al₂O₃ growth.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_a9607840c6d18561d4f18b7a1f06f1ae28d6db1defddf1c5004de640af0d0642.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/30/a9607840c6d18561d4f18b7a1f06f1ae28d6db1defddf1c5004de640af0d0642","sample_id":"atomic-layer-deposition/simulation-usecase/30/a9607840c6d18561d4f18b7a1f06f1ae28d6db1defddf1c5004de640af0d0642","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"},{"panel_id":"d","label":"reaction scheme"},{"panel_id":"e","label":"reaction scheme"},{"panel_id":"f","label":"reaction scheme"},{"panel_id":"g","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/a9607840c6d18561d4f18b7a1f06f1ae28d6db1defddf1c5004de640af0d0642.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/a9607840c6d18561d4f18b7a1f06f1ae28d6db1defddf1c5004de640af0d0642.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":642,"height":427,"image_format":"jpeg","image_sha256":"034443200d21dad75e54a69176647a29635ec1b0f8d47c43e2e39e0486b2d834","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":8,"width":438,"height":120},{"panel_id":"b","x":2,"y":134,"width":472,"height":147},{"panel_id":"c","x":2,"y":278,"width":170,"height":145},{"panel_id":"d","x":158,"y":279,"width":190,"height":146},{"panel_id":"e","x":463,"y":12,"width":173,"height":125},{"panel_id":"f","x":476,"y":133,"width":164,"height":147},{"panel_id":"g","x":472,"y":282,"width":169,"height":145}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The left column (a-d) shows reactions with Al precursors (TMA or TEA, where X = Me or Et). Starting with (a), representing RBO opening by ligand exchange\"},{\"panel_id\":\"b\",\"text\":\"Si_SMI−O_surf bond disintegration\"},{\"panel_id\":\"c\",\"text\":\"C−O bond intersection at methoxy groups\"},{\"panel_id\":\"d\",\"text\":\"methoxy−Si_SMI intersection producing aluminum alkoxide.\"},{\"panel_id\":\"e\",\"text\":\"The right column (e-g) shows hydrolysis reactions with water. Starting with (e), representing RBO hydrolysis to form silanols\"},{\"panel_id\":\"f\",\"text\":\"Si_SMI−O_surf hydrolysis\"},{\"panel_id\":\"g\",\"text\":\"methoxy hydrolysis.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It indicates that X represents the alkyl ligands of the aluminum precursors—methyl (Me) for trimethylaluminum (TMA) or ethyl (Et) for triethylaluminum (TEA).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The paper shows that pulsing water before the inhibitor can hydrolyze RBOs into silanols (reaction E), removing this highly reactive species and potentially improving blocking layer performance.\"}]},{\"panel_id\":\"g\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Reactions A–D involve Al precursors (TMA or TEA) attacking the blocking layer through ligand exchange reactions, while reactions E–G involve hydrolysis by the water co-reactant.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Reaction B (Si_SMI−O_surf disintegration) poses the greatest threat because it directly breaks the bond anchoring the SMI to the surface, potentially detaching inhibitor molecules and creating gaps in the blocking layer. This exposes underlying silanols to Al precursors, enabling nucleation of Al₂O₃ growth on the non-growth surface.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_35_fig_4.jpg","caption":"Fig. 4. Schematic illustration of the $\\mathrm{AlMe}_3$ reaction possibilities on oxide surfaces: ligand exchange with one (a), two (c) and three (c) OH groups; dissociation (d); and association (e) [13,15,21,23-26]. (The methane molecules released in reaction with OH groups are omitted.)","id":"train/atomic-layer-deposition/simulation-usecase/35/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/35/fig_4","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"},{"panel_id":"d","label":"reaction scheme"},{"panel_id":"e","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/Riikka L. Puurunen.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":889,"height":308,"image_format":"jpeg","image_sha256":"45c540b6fefab838e07534b73fe8498685130eb9fa664a5152c26761252e26db","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":6,"width":183,"height":280},{"panel_id":"b","x":189,"y":6,"width":140,"height":273},{"panel_id":"c","x":362,"y":52,"width":144,"height":226},{"panel_id":"d","x":501,"y":3,"width":200,"height":278},{"panel_id":"e","x":722,"y":4,"width":166,"height":279}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Ligand exchange with one surface OH group. One methyl is released as methane (not shown), producing a surface-bound AlMe₂ species attached through a single Al–O bond.\"},{\"panel_id\":\"b\",\"text\":\"Ligand exchange with two OH groups. Two methyls are released, yielding an AlMe species bridging two surface oxygen atoms.\"},{\"panel_id\":\"c\",\"text\":\"Ligand exchange with three OH groups. All three methyls are released, leaving aluminum bonded to three surface oxygens with no remaining ligands.\"},{\"panel_id\":\"d\",\"text\":\"Dissociation on an oxygen bridge. AlMe₃ splits across a surface O bridge (no OH required), depositing AlMe₂ bonded to one oxygen and a separate methyl group on an adjacent site.\"},{\"panel_id\":\"e\",\"text\":\"Association with an oxygen bridge. AlMe₃ coordinates to a surface oxygen via a dative bond (dotted line) without dissociating, retaining all three methyl ligands.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Me/Al ratio directly reflects which mechanism dominates. Ligand exchange with one, two, or three OH groups yields Me/Al ratios of 2, 1, and 0 respectively, since each reacting OH releases one methyl as methane. Dissociation produces a Me/Al ratio between 2 and 3 depending on how the methyl fragments distribute. Association preserves all three methyl groups, giving Me/Al = 3. The experimental observation that Me/Al approaches 3 at low OH concentrations supports the occurrence of dissociation and/or association pathways.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The coexistence of multiple pathways explains why the simple model assuming one OH binds one aluminum atom fails quantitatively. The data show that Δc_Al is nonzero even when c_(O)H approaches zero, which is only possible if dissociation or association reactions contribute to growth. Furthermore, the slope b ≈ 0.37 in the Δc_Al versus c_(O)H correlation indicates that roughly three OH groups are needed per additional aluminum atom, consistent with steric crowding by methyl groups limiting the saturation coverage regardless of which specific mechanisms operate.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Dissociation (d) and association (e). In dissociation, AlMe₃ breaks apart across a surface oxygen bridge. In association, AlMe₃ forms a dative bond to a bridging oxygen while retaining all methyl groups.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dotted line represents a dative (coordinate) bond where the oxygen donates electrons to aluminum without covalent bond formation. In panels (a–d), solid lines represent true covalent Al–O bonds formed after ligand exchange or dissociation.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_43_figure_1.jpg","caption":"Figure 1. Reaction profiles obtained by the ReaxFF-NEB calculations for $\\mathrm{Al}_2\\mathrm{O}_3$ ALD on the $\\mathrm{Ge(100):H}$ surface. Adsorption of (a) TMA and (b) $\\mathrm{H}_2\\mathrm{O}$ at H-terminated Ge surface site. (c) TMA adsorption on a $\\mathrm{Ge - ^*}$ dangling bond site. The insets in each profile are the spatial arrangement of molecule and atomic structures at the corresponding reaction stages.","id":"train/atomic-layer-deposition/simulation-usecase/43/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/43/figure_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/Yuanxia Zheng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":672,"height":806,"image_format":"jpeg","image_sha256":"b238c1272e1f8132058fd54b59f67442c5f56186cdde3f5541d26ccca0a04b0c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":17,"y":18,"width":649,"height":254},{"panel_id":"b","x":19,"y":297,"width":649,"height":234},{"panel_id":"c","x":16,"y":570,"width":652,"height":234}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The graph represents the energy profile obtained from ReaxFF-NEB calculations for Al₂O₃ ALD on an H-terminated Ge(100) surface, showing the adsorption of trimethylaluminum (TMA). The reaction proceeds via chemisorption of TMA on a Ge–H* site, forming a Ge–Al(CH₃)₂* surface complex with the release of a CH₄ molecule, with an activation barrier of about 1.41 eV and an overall exothermic reaction energy of −1.09 eV. The insets illustrate the atomic configurations at each reaction stage.\"},{\"panel_id\":\"b\",\"text\":\"The graph represents the energy profile obtained from ReaxFF-NEB calculations for the H₂O half-cycle of Al₂O₃ ALD on an H-terminated Ge(100) surface. It shows the reaction of H₂O with a Ge–H* site to form a Ge–OH* surface species and molecular H₂, with an activation energy of approximately 2.32 eV and a final reaction energy of about 1.04 eV. The insets depict the corresponding molecular adsorption and reaction configurations along the reaction pathway.\"},{\"panel_id\":\"c\",\"text\":\"The graph represents the energy profile obtained from ReaxFF-NEB calculations for TMA adsorption on a Ge dangling bond (Ge–) site on the Ge(100) surface. TMA initially adsorbs strongly on the Ge– site, followed by a hydrogen-assisted ligand elimination reaction involving a neighboring Ge–H* site, resulting in the formation of a Ge–Al(CH₃)₂* complex and CH₄, with an overall reaction energy of −1.74 eV. The insets show the atomic arrangements corresponding to each intermediate and transition state.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | Energy (eV) | reaction state |\\n|---|---|---|\\n| | 0.0 | Initial State |\\n| Ge–H* + Al(CH₃)₃ → Ge–Al(CH₃)₂* + CH₄ | 1.41 |Transition state | \\n| Ge–Al(CH₃)₂* → Ge–Al(CH₃)₂* + CH₄ | −1.09 |Final state |\"},{\"panel_id\":\"b\",\"text\":\"| Reaction Step | Energy (eV) |reaction state |\\n|---|---|----- |\\n| - | 0.0 | Initial State |\\n| - | -0.58 | Intermediate State |\\n| Ge–H* + H₂O → Ge–OH* + H₂ | 2.32 |Transition state | \\n| Ge–OH* → Ge–OH* + H₂ | 1.04 |Final state |\"},{\"panel_id\":\"c\",\"text\":\"| Reaction Step | Energy (eV) |reaction state |\\n|---|---|----- |\\n| - | 0.0 | Initial State |\\n| -0.0824 |Ge* + Al(CH₃)₃ → Ge–Al(CH₃)₃* | Intermediate State |\\n| Ge–Al(CH₃)₃* + Ge–H* → Ge–Al(CH₃)₂* + CH₄ + Ge* | −0.824 |Transition state | \\n| - | 0.079 | Intermediate State |\\n| Ge–Al(CH₃)₂* → Ge–Al(CH₃)₂* + CH₄ + Ge* | −1.74 |Final state |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Growth will not occur uniformly; it will be highly selective to defects (dangling bonds). Since the ideal H-terminated surface is unreactive, nucleation will cluster around existing defects where adsorption is spontaneous, leading to island growth and potential pinholes rather than a conformal layer-by-layer deposition.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Spontaneous adsorption of TMA onto the Ge dangling bond (Ge-*).\\n2. Reaction with a neighboring Ge-H* site to eliminate methane (CH₄).\\n\\nThe first step in (c) is spontaneous and exothermic (-0.824 eV) due to the open radical site. In contrast, the initial interaction in (a) faces a significant activation barrier (1.41 eV) because the H-passivated surface lacks active binding sites.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TMA is more likely to react, although both barriers are high. The activation energy for TMA (1.41 eV) is nearly 1 eV lower than for H₂O (2.32 eV), implying that under thermal stress, TMA has a statistically higher probability of overcoming the passivation layer than water.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The H₂O reaction has a higher barrier (~2.32 eV vs. ~1.41 eV), implying it is the slower, rate-limiting half-reaction in the ALD cycle. This higher barrier originates from the stronger O–H bond that must be broken.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_43_figure_2.jpg","caption":"Figure 2. Reaction profiles obtained by the ReaxFF-NEB calculations for: (a) $\\mathrm{H}_2\\mathrm{O}$ hydroxylates one $-\\mathrm{CH}_3$ group on the $\\mathrm{Ge - Al(CH_3)_2^*}$ site, (b) $\\mathrm{H}_2\\mathrm{O}$ hydroxylates $-\\mathrm{CH}_3$ group on the $\\mathrm{Ge - Al(CH_3)(OH)^*}$ site, and (c) TMA adsorption on the $\\mathrm{Ge - Al(OH)_2^*}$ site. The insets in each profile are the spatial arrangement of molecule and atomic structures at the corresponding reaction stages.","id":"train/atomic-layer-deposition/simulation-usecase/43/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/43/figure_2","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/Yuanxia Zheng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":672,"height":800,"image_format":"jpeg","image_sha256":"2d5aae42184d52e7db24841c62fe4ef7e6c5279a8e9bcdb0d6bc07397cf3fa20","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":20,"y":10,"width":650,"height":249},{"panel_id":"b","x":15,"y":291,"width":653,"height":243},{"panel_id":"c","x":11,"y":560,"width":656,"height":234}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows ReaxFF-NEB energy profiles for sequential surface reactions during Al₂O₃ ALD nucleation on Ge: This energy profile describes the first water exposure during Al₂O₃ ALD nucleation on a Ge surface terminated with Ge–Al(CH₃)₂*. H₂O initially adsorbs exothermically, followed by proton transfer and methyl elimination, forming a Ge–Al(CH₃)(OH)* intermediate with CH₄ release. The reaction proceeds with a low barrier and an overall negative energy change, indicating a thermodynamically favorable hydroxylation of the surface-bound Al species.\"},{\"panel_id\":\"b\",\"text\":\"The second H₂O half-reaction further converts the remaining Al–CH₃ group into an Al–OH group through adsorption and ligand exchange. This step forms a fully hydroxylated Ge–Al(OH)₂* surface species with additional CH₄ formation. The energy profile shows modest activation barriers and an overall exothermic reaction, confirming that complete hydroxylation of the Al center is energetically favorable\"},{\"panel_id\":\"c\",\"text\":\"In the following TMA exposure, Al(CH₃)₃ reacts with the Ge–Al(OH)₂* surface, forming an Al–O–Al bridged dimer via condensation and CH₄ elimination. This step is strongly exothermic, indicating stable Al–O–Al bond formation and effective nucleation of the Al₂O₃ network. The reaction establishes the foundation for continued layer-by-layer Al₂O₃ growth on the Ge substrate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| State | Reaction Step | Energy (eV) |\\n|--------------|------------------------------------------------------------|-------------|\\n| Initial | Ge–Al(CH₃)₂* + H₂O | 0.00 |\\n| Intermediate | Ge–Al(CH₃)₂(H₂O)* | −1.00 |\\n| Transition | Ge–Al(CH₃)₂(H₂O)* → Ge–Al(CH₃)(OH)* + CH₄ | 0.07 |\\n| Intermediate | Ge–Al(CH₃)(OH)* | −1.71 |\"},{\"panel_id\":\"b\",\"text\":\"| State | Reaction Step | Energy (eV) |\\n|--------------|------------------------------------------------------------|-------------|\\n| Initial | Ge–Al(CH₃)(OH)* + H₂O | 0.00 |\\n| Intermediate | Ge–Al(CH₃)(OH)(H₂O)* | −0.80 |\\n| Transition | Ge–Al(CH₃)(OH)(H₂O)* → Ge–Al(OH)₂* + CH₄ | 0.30 |\\n| Final | Ge–Al(OH)₂* | −1.44 |\"},{\"panel_id\":\"c\",\"text\":\"| State | Reaction Step | Energy (eV) |\\n|--------------|--------------------------------------------------------------------------------|-------------|\\n| Initial | Ge–Al(OH)₂* + Al(CH₃)₃ | 0.00 |\\n| Transition | Ge–Al(OH)₂* + Al(CH₃)₃ → Ge–Al(OH)–O–Al(CH₃)₂ + CH₄ | 0.18 |\\n| Final | Ge–Al(OH)–O–Al(CH₃)₂ | −1.22 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The order is (a) → (b) → (c). This pattern of alternating H₂O and TMA reactions defines a complete ALD supercycle for depositing Al₂O₃, where each pair of half-reactions adds a stoichiometric increment of Al₂O₃.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The first H₂O half-cycle (a) has a higher barrier (1.71 eV) and is more limiting than the second (b, 1.44 eV). To speed up cycles, higher temperature targets barrier (a), with the trade-off of risking premature precursor decomposition.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies nucleation is the hardest step, making the first few ALD cycles slow and potentially non-uniform. Precise temperature and precursor control are critical initially to ensure a continuous, pinhole-free gate dielectric.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It forms the first Al–O–Al bridge (Ge–Al(OH)–O–Al(CH₃)₂), creating a cross-linked oxide network. This linkage significantly enhances the film's mechanical and thermal stability compared to isolated, Ge-tethered monomers.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_a63e5b9bd0d4415bbaf27d1b402d5a3f4e7406677e9aaa8efce0059afbbfa476.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/44/a63e5b9bd0d4415bbaf27d1b402d5a3f4e7406677e9aaa8efce0059afbbfa476","sample_id":"atomic-layer-deposition/simulation-usecase/44/a63e5b9bd0d4415bbaf27d1b402d5a3f4e7406677e9aaa8efce0059afbbfa476","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/a63e5b9bd0d4415bbaf27d1b402d5a3f4e7406677e9aaa8efce0059afbbfa476.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/a63e5b9bd0d4415bbaf27d1b402d5a3f4e7406677e9aaa8efce0059afbbfa476.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":355,"height":123,"image_format":"jpeg","image_sha256":"56ea9a6b754e857d786597286b6c0a8af88c5e85102df5ef81c0fadc65b69ad7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":257,"height":116}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_52_fig_8.jpg","caption":"Fig. 8 Proposed overall ALD reaction mechanism for W deposition.","id":"train/atomic-layer-deposition/simulation-usecase/52/fig_8","sample_id":"atomic-layer-deposition/simulation-usecase/52/fig_8","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":1303,"height":1056,"image_format":"jpeg","image_sha256":"c350be1014d3896ee56761dfe46368b43dbc45db3bb46f373a0f2ef34500dd91","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":1298,"height":1052}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a proposed overall ALD reaction mechanism for tungsten deposition on TiN surfaces. Process 1 illustrates B₂H₆ dissociation on TiN, leading to hydrogen adsorption and subsequent H₂ desorption, resulting in a B-covered surface. Process 2 shows WF₆ dissociation on the B-covered TiN surface, followed by tungsten substitution into boron sites and BF₃ desorption. Process 3 depicts H₂ post-treatment on the W-covered surface, where hydrogen dissociation enables the removal of residual fluorine through HF desorption. Activation energies and reaction energies are annotated to highlight the energetics of each mechanistic step.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The H₂ post-treatment process leading to HF desorption.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Boron modifies the TiN surface by providing reactive sites that facilitate WF₆ dissociation. Tungsten atoms can substitute into boron sites, lowering the energetic cost of incorporation and stabilizing surface-bound tungsten species. This substitution mechanism is central to achieving controlled tungsten deposition.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- It clarifies the sequence of surface reactions across multiple ALD steps.\\n- It highlights the role of surface modification and post-treatment.\\n- It connects energetic barriers to process feasibility.\\n- It aids in rational optimization of ALD process conditions.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_0ab2f3e4f408574245c6f8a99cf546c1863fda1e7a6c33220e0938239011abaa.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/53/0ab2f3e4f408574245c6f8a99cf546c1863fda1e7a6c33220e0938239011abaa","sample_id":"atomic-layer-deposition/simulation-usecase/53/0ab2f3e4f408574245c6f8a99cf546c1863fda1e7a6c33220e0938239011abaa","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/0ab2f3e4f408574245c6f8a99cf546c1863fda1e7a6c33220e0938239011abaa.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/0ab2f3e4f408574245c6f8a99cf546c1863fda1e7a6c33220e0938239011abaa.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":656,"height":280,"image_format":"jpeg","image_sha256":"b39fe0421f6b768da3d671bf7b7e3ba7dc9d77b678d35e126a818d5ee2ba4753","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":10,"width":648,"height":267}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_4.jpg","caption":"Figure 4. Proposed mechanistic steps for reactive chemisorption of $\\mathrm{SiH}_2\\mathrm{X}_2$ precursor and desorption of functional group X via proton transfer from a $\\mathrm{Si - Y - H}$ functionalized surface $\\mathrm{Y} = \\mathrm{O}$ , $\\mathrm{NH}$ , or $\\mathrm{N}$ . Structure 1 depicts the initial unbound reactants (UR) step; structure 2, the bound reactants (BR); structure 3, the transition state (TS); structure 4, the bound product (BP) step and structure 5, the final unbound products (UP).","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_4","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":667,"height":489,"image_format":"jpeg","image_sha256":"0ca9c40bd0c10a65fe9efa5ede48f1f0809bb018190c2f8df105d006df30a968","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":662,"height":486}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_54_figure_1.jpg","caption":"Figure 1. Full cycle of $\\mathrm{SiO}_2$ ALD using $\\mathrm{SiCl}_4$ and $\\mathrm{H}_2\\mathrm{O}$ . Reprinted with permission from ref 18. Copyright 2015 Springer.","id":"train/atomic-layer-deposition/simulation-usecase/54/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/54/figure_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/Guoyong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":1075,"height":503,"image_format":"jpeg","image_sha256":"559ebb36d928e32a511b7b1a01a07b08bd170bbe6e8aa936d7a96e32fdd39382","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":5,"width":1060,"height":486}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_54_figure_6.jpg","caption":"Figure 6. $\\mathrm{O}_2$ -based ALD of $\\mathrm{SiO}_2$ with aminosilane. Reprinted with permission from ref 23. Copyright 2012 American Chemical Society.","id":"train/atomic-layer-deposition/simulation-usecase/54/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/54/figure_6","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/Guoyong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":675,"height":327,"image_format":"jpeg","image_sha256":"4cceddd62158e5170895c50e1ba329babb6c33b156a3adafe11cd2ee66a14b26","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":4,"width":670,"height":319}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_54_figure_9.jpg","caption":"Figure 9. RALD of $\\mathrm{Al}_2\\mathrm{O}_3 / \\mathrm{SiO}_2$ nanolaminate. Reprinted with permission from ref 30. Copyright 2013 Royal Society of Chemistry.","id":"train/atomic-layer-deposition/simulation-usecase/54/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/54/figure_9","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/Guoyong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":656,"height":416,"image_format":"jpeg","image_sha256":"1b7739b62a391b486bdbd9e5ada260420d2fc8f5628839a7e0f695e191f39f9e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":655,"height":412}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_56_figure_4.jpg","caption":"Figure 4. Optimized initial, transition, and final structures of the partial dissociative chemisorption of BTBAS on a hydroxylated $\\mathrm{Si}(001)$ surface to form a monoamine intermediate. The green balls represent the migrating H atom.","id":"train/atomic-layer-deposition/simulation-usecase/56/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/56/figure_4","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/Bo Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":675,"height":169,"image_format":"jpeg","image_sha256":"da4b07215a1a551b4c4f791d12a351c30baefd1f97271ec92e33a01eed7a24b9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":8,"width":672,"height":159}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_56_figure_6.jpg","caption":"Figure 6. Optimized initial, transition, and final structures of the sequential surface oxidation steps along path a: (a) step 1, (b) step 2.","id":"train/atomic-layer-deposition/simulation-usecase/56/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/56/figure_6","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/Bo Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":675,"height":386,"image_format":"jpeg","image_sha256":"48c572aa0afd978f3abc1d68820f66b298b9c33d07bacb5d0fb100a4cc6140ca","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":15,"y":24,"width":657,"height":165},{"panel_id":"b","x":4,"y":210,"width":668,"height":172}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_6_figure_1.jpg","caption":"Figure 1. Schematic of each ALD cycle (Created with BioRender.com).","id":"train/atomic-layer-deposition/simulation-usecase/6/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/6/figure_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1208,"height":281,"image_format":"jpeg","image_sha256":"d680f5f1662bf16672774b08321c1f56f0bd00d2bd9e06b050ea57aa07041891","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":1205,"height":277}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a four-step process involving precursor and co-reactant pulses followed by purges on a substrate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Not all active sites are occupied, a reason for this could be steric shielding by ligands of the precursor molecule.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The co-reactant step is self-limiting, the reactants only react with the ligands of the precursor molecules and not with themselves.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An ALD process is the repetition of the four given steps for a discrete number of cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No they do not, if they would that would kill the self-limiting behaviour and parasitic CVD would occur.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_9_figure_8.jpg","caption":"Figure 8. Example of densification mechanism: multilayer noncrystalline/tree.","id":"train/atomic-layer-deposition/simulation-usecase/9/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/9/figure_8","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/A. Dkhissi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":625,"height":353,"image_format":"jpeg","image_sha256":"6d528bf390b6f4661a2ef20005c035c73992bf628083a62f08d533ed881f5670","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":623,"height":351}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows an example of a densification process. On the left, several noncrystalline molecular units are loosely arranged and weakly connected. After densification, shown on the right, these units rearrange and link together to form a more compact, tree-like multilayer structure. The process increases the number of metal–oxygen connections and reduces empty space in the structure. This type of reorganization is typical during densification of amorphous metal–oxide films in ALD.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Metal–oxygen bonding.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Units move closer together\\n, -New metal–oxygen links form\\n, -Loose groups become connected\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Shorter distances between atoms\\n, -More shared oxygen atoms\\n, -Branched, tree-like connections\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Densification improves film strength and stability by reducing weak points in the structure. A denser network has fewer defects and better bonding, which helps improve electrical and mechanical performance. This is important for oxide films used in devices such as dielectrics and protective layers.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_11_figure_7.jpg","caption":"Figure 7. Schematic of the proposed reaction mechanism for ALE of $\\mathrm{ZnO}$ . During half-reaction A, volatile $\\mathrm{Zn(acac)_2}$ is assumed to form from Hacac and $\\mathrm{ZnO}$ , while leaving residual acac species and other possible carbonaceous fragments. During half-reaction B, an $\\mathrm{O}_2$ plasma combusts the carbonaceous surface species and resets the $\\mathrm{ZnO}$ surface for the next cycle.","id":"train/atomic-layer-etching/experimental-usecase/11/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/11/figure_7","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plasma.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":675,"height":442,"image_format":"jpeg","image_sha256":"a25f03db962bfa1313d15ce7a49be818d50dded4222fe054ce8921793c089722","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":10,"width":665,"height":414}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_5a24d10a34dd5e28d6ab429c371bb3dcb7951c6660b1d5b5ea07990118eea01c.jpg","caption":"","id":"train/atomic-layer-etching/experimental-usecase/14/5a24d10a34dd5e28d6ab429c371bb3dcb7951c6660b1d5b5ea07990118eea01c","sample_id":"atomic-layer-etching/experimental-usecase/14/5a24d10a34dd5e28d6ab429c371bb3dcb7951c6660b1d5b5ea07990118eea01c","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/5a24d10a34dd5e28d6ab429c371bb3dcb7951c6660b1d5b5ea07990118eea01c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/5a24d10a34dd5e28d6ab429c371bb3dcb7951c6660b1d5b5ea07990118eea01c.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":511,"height":275,"image_format":"jpeg","image_sha256":"50b4ea544c7f74271ea9f4fca450d2bb85c3b3e0ff5135c172d41474e3beef37","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":39,"y":7,"width":471,"height":142},{"panel_id":"a","x":39,"y":145,"width":471,"height":125}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_6cc4800b80340b5b83ba79735d82f03b51964086ce5164fb3d41a8c84c1f5ecc.jpg","caption":"","id":"train/atomic-layer-etching/experimental-usecase/14/6cc4800b80340b5b83ba79735d82f03b51964086ce5164fb3d41a8c84c1f5ecc","sample_id":"atomic-layer-etching/experimental-usecase/14/6cc4800b80340b5b83ba79735d82f03b51964086ce5164fb3d41a8c84c1f5ecc","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/6cc4800b80340b5b83ba79735d82f03b51964086ce5164fb3d41a8c84c1f5ecc.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/6cc4800b80340b5b83ba79735d82f03b51964086ce5164fb3d41a8c84c1f5ecc.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":656,"height":761,"image_format":"jpeg","image_sha256":"f1c40a4141db70740c9a0e59eda698e164512513cba93d28a39a3c3f1878bc49","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":656,"height":761}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_11.jpg","caption":"Figure 11. Schematic for Si ALE using $\\mathrm{O}_2$ , $\\mathrm{HF}$ , and $\\mathrm{Al(CH_3)_3}$ . $\\mathrm{O}_2$ oxidizes Si to $\\mathrm{SiO}_2$ . $\\mathrm{HF}$ converts the top $\\mathrm{Al}_2\\mathrm{O}_3$ layer to $\\mathrm{AlF}_3$ . $\\mathrm{Al(CH_3)_3}$ removes the $\\mathrm{AlF}_3$ surface layer by a ligand-exchange reaction and then converts $\\mathrm{SiO}_2$ to $\\mathrm{Al}_2\\mathrm{O}_3$ . Reproduced with permission from ref 37. Copyright 2018 American Chemical Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_11","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_11","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":672,"height":564,"image_format":"jpeg","image_sha256":"7a618cb99e6dc05ca07d4b83e8c30c3935c73efbb5177e635828de4fd43842eb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":0,"y":383,"width":668,"height":179},{"panel_id":"b","x":8,"y":176,"width":662,"height":196},{"panel_id":"a","x":3,"y":4,"width":668,"height":174}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_13.jpg","caption":"Figure 13. Schematic for W ALE using $\\mathrm{O}_2 / \\mathrm{O}_3$ , $\\mathrm{BCl}_3$ , and $\\mathrm{HF}$ . $\\mathrm{O}_2 / \\mathrm{O}_3$ oxidizes W to $\\mathrm{WO}_3$ . $\\mathrm{BCl}_3$ converts $\\mathrm{WO}_3$ to $\\mathrm{B}_2\\mathrm{O}_3$ . $\\mathrm{HF}$ then spontaneously etches $\\mathrm{B}_2\\mathrm{O}_3$ . Reproduced with permission from ref 32. Copyright 2017 American Chemical Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_13","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_13","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":658,"height":469,"image_format":"jpeg","image_sha256":"aec15e2aa9c56f991f7e2afd3521b77ce6dd34ff3bd7628c851eae6cde42652d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":62,"y":337,"width":595,"height":129},{"panel_id":"b","x":48,"y":166,"width":608,"height":148},{"panel_id":"a","x":53,"y":2,"width":603,"height":159}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_15.jpg","caption":"Figure 15. Schematic of Co ALE with $\\mathrm{Cl}_2$ and hfacH as reactants. $\\mathrm{Cl}_2$ chlorinates the Co surface in Step I. hfacH removes $\\mathrm{Co(hfac)_2Cl_2}$ in Step II. Reproduced with permission from ref 43. Copyright 2019 American Vacuum Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_15","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_15","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":669,"height":164,"image_format":"jpeg","image_sha256":"ecc71297b98768a25a4cd5137610af60511a92fdfcf58b5db055f4225b691c7b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":-1,"width":667,"height":163}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_16.jpg","caption":"Figure 16. Schematic of $\\mathrm{ZnO}$ ALE using acacH and $\\mathrm{O}_2$ plasma as reactants. acacH produces $\\mathrm{Zn(acac)}_2$ and also forms self-limiting acac surface ligands in reaction A. $\\mathrm{O}_2$ plasma removes acac surface ligands in reaction B. Reproduced with permission from ref 47. Copyright 2018 American Chemical Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_16","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_16","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_16.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":670,"height":431,"image_format":"jpeg","image_sha256":"19118fca3381c45e82648c67dc6d0eef36d96a7350abbf1d9bc1c0b5a7e2d0e9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":321,"y":6,"width":349,"height":423},{"panel_id":"a","x":0,"y":0,"width":366,"height":440}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_4.jpg","caption":"Figure 4. Schematic of $\\mathrm{Al}_2\\mathrm{O}_3$ ALE based on fluorination with HF and ligand-exchange with $\\mathrm{Al(CH_3)_3}$ .","id":"train/atomic-layer-etching/experimental-usecase/14/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_4","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":670,"height":447,"image_format":"jpeg","image_sha256":"db0c0838d21488d38457c375eb499e858147306a63cea47b2631e06d0aca8d4e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":3,"y":228,"width":662,"height":221},{"panel_id":"a","x":0,"y":0,"width":670,"height":246}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_8.jpg","caption":"Figure 8. Schematic for $\\mathrm{SiO}_2$ ALE using TMA and HF as reactants. TMA removes $\\mathrm{AlF}_2$ layer by ligand-exchange and then converts surface of underlying $\\mathrm{SiO}_2$ to an $\\mathrm{Al}_2\\mathrm{O}_3$ surface layer. Reproduced with permission from ref 31. Copyright 2017 American Chemical Society. Figure 10. Schematic for TiN ALE using $\\mathrm{O}_3$ and HF as reactants. $\\mathrm{O}_3$ oxidizes TiN to $\\mathrm{TiO}_2$ . HF then spontaneously etches the $\\mathrm{TiO}_2$ surface layer. Reproduced with permission from ref 33. Copyright 2017 American Chemical Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_8","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":672,"height":441,"image_format":"jpeg","image_sha256":"8f9112718f7403f724551e555f70312ce78d55593606704ba499333e0f34c911","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":355,"y":1,"width":313,"height":441},{"panel_id":"a","x":5,"y":7,"width":345,"height":430}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_9.jpg","caption":"Figure 9. Schematic for $\\mathrm{WO}_3$ ALE using $\\mathrm{BCl}_3$ and HF as reactants. $\\mathrm{BCl}_3$ converts the surface of $\\mathrm{WO}_3$ to a $\\mathrm{B}_2\\mathrm{O}_3$ surface layer. HF then spontaneously etches the $\\mathrm{B}_2\\mathrm{O}_3$ surface layer. Reproduced with permission from ref 32. Copyright 2017 American Chemical Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_9","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_9","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":672,"height":302,"image_format":"jpeg","image_sha256":"2cd7a22097ea4414e1236fb5101a6e95784041fd09958fd5404b1c64e4158e8d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":2,"y":155,"width":669,"height":145},{"panel_id":"a","x":0,"y":2,"width":670,"height":152}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_c977c5711d13e45cab06a422cd2d459960c00f7c1f1d24a56b371576d108c11d.jpg","caption":"","id":"train/atomic-layer-etching/experimental-usecase/17/c977c5711d13e45cab06a422cd2d459960c00f7c1f1d24a56b371576d108c11d","sample_id":"atomic-layer-etching/experimental-usecase/17/c977c5711d13e45cab06a422cd2d459960c00f7c1f1d24a56b371576d108c11d","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/c977c5711d13e45cab06a422cd2d459960c00f7c1f1d24a56b371576d108c11d.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/c977c5711d13e45cab06a422cd2d459960c00f7c1f1d24a56b371576d108c11d.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":483,"height":339,"image_format":"jpeg","image_sha256":"0f145b42e345f23411988b143e3d8c6a8a8444ea9efea0a6968a19eff303e6b2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":483,"height":339}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_3.jpg","caption":"Figure 3. (A, B) Schematic of the sequential surface reactions during $\\mathrm{Al}_2\\mathrm{O}_3$ ALE using exposures of $\\mathrm{SF}_4$ and $\\mathrm{Sn(acac)}_2$ .","id":"train/atomic-layer-etching/experimental-usecase/17/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_3","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":675,"height":484,"image_format":"jpeg","image_sha256":"55b6c2d275255b251a2f21bd073bb9e4a5b29023e33251e0f4d9be8b396469fb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":484}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_22_45eefa63d31d4d4a499245ab87f9b41a3d738c18e1400bd96272bb6b861253cb.jpg","caption":"","id":"train/atomic-layer-etching/experimental-usecase/22/45eefa63d31d4d4a499245ab87f9b41a3d738c18e1400bd96272bb6b861253cb","sample_id":"atomic-layer-etching/experimental-usecase/22/45eefa63d31d4d4a499245ab87f9b41a3d738c18e1400bd96272bb6b861253cb","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/45eefa63d31d4d4a499245ab87f9b41a3d738c18e1400bd96272bb6b861253cb.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/45eefa63d31d4d4a499245ab87f9b41a3d738c18e1400bd96272bb6b861253cb.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/Thermal Atomic Layer Etching of MoS2 Using MoF6 and H2O.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":514,"height":289,"image_format":"jpeg","image_sha256":"e3a352dab5950f7b079786e5124ba2b542ec91ba906805a1fb6a88f5037fd62e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":514,"height":289}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_22717bf8a5bd8f6b666da5b031a8178400767b3930c0e361ea3ee6c43edeead3.jpg","caption":"","id":"train/atomic-layer-etching/experimental-usecase/23/22717bf8a5bd8f6b666da5b031a8178400767b3930c0e361ea3ee6c43edeead3","sample_id":"atomic-layer-etching/experimental-usecase/23/22717bf8a5bd8f6b666da5b031a8178400767b3930c0e361ea3ee6c43edeead3","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/22717bf8a5bd8f6b666da5b031a8178400767b3930c0e361ea3ee6c43edeead3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/22717bf8a5bd8f6b666da5b031a8178400767b3930c0e361ea3ee6c43edeead3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":436,"height":344,"image_format":"jpeg","image_sha256":"c9a6972a0fa35b6253c55e256b18ee01118d0e68d3de23e14527131baca89a9d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":12,"width":428,"height":331}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_1.jpg","caption":"Figure 1. Proposed mechanism of ZnS ALE using HF and TMA as reactants based on (a) fluorination and (b) ligand-exchange reactions.","id":"train/atomic-layer-etching/experimental-usecase/23/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":672,"height":539,"image_format":"jpeg","image_sha256":"3c487e3562ceb2e0185262ff0d9a5f18118e6893c758c7c981eed3827c236fde","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":65,"y":11,"width":605,"height":522}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_2.jpg","caption":"Figure 2. Proposed mechanism of $\\mathrm{ZnS}$ ALE using HF and TMA as reactants based on initial conversion followed by (a) fluorination and (b) ligand-exchange and conversion reactions.","id":"train/atomic-layer-etching/experimental-usecase/23/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_2","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":658,"height":661,"image_format":"jpeg","image_sha256":"85f29901642ce57ef4914d57f9cfb6413ddfcbb024e41fe7b9ca1bb9bedab8b7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":23,"y":5,"width":634,"height":652}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_4_fig_1.jpg","caption":"FIG. 1. Atomic layer etching process for TO. Final developed process parameters below each step schematic. In Reaction A, the $\\mathsf{BCl}_3$ pulse modifies the surface. Surface metal atoms are chlorinated and surface oxygen forms boron oxychlorides with the reactant. Purge A is an argon purge that removes excess unreacted $\\mathsf{BCl}_3$ from the chamber. Reaction B is the modified surface removal step. A low ion energy Argon bombardment gives enough energy to volatilize and remove metal chlorides and the surface boron oxychlorides. Purge B removes reaction products with argon. Oxygen in black, argon in red, boron in yellow, chlorine in green, indium in purple, and tin in blue. VESTA 3 was used in drawing the images.","id":"train/atomic-layer-etching/experimental-usecase/4/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/4/fig_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/Atomic layer etching of indium tin oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1411,"height":811,"image_format":"jpeg","image_sha256":"94365ba137db0d09c1fa32dddbccb3269004c5fa14a182bc6e06e6fdd3d6ddfc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":0,"width":1398,"height":810}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_42_figure_1.jpg","caption":"Figure 1. Schematic for $\\mathrm{Al}_2\\mathrm{O}_3$ ALE using HF and TMA as the reactants. HF fluorinates $\\mathrm{Al}_2\\mathrm{O}_3$ to form an $\\mathrm{AlF}_3$ layer on the surface. Subsequently, TMA accepts $\\mathrm{F}$ from the $\\mathrm{AlF}_3$ layer and donates a methyl ligand to the $\\mathrm{AlF}_3$ layer to form volatile reaction products such as $\\mathrm{AlF}(\\mathrm{CH}_3)_2$ .","id":"train/atomic-layer-etching/experimental-usecase/42/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/42/figure_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/Selectivity in Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":675,"height":402,"image_format":"jpeg","image_sha256":"167e2f6d28a9695846b23cf60492ba4c6de362bcd4e88f705dced688f528f548","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":5,"width":304,"height":395},{"panel_id":"b","x":341,"y":7,"width":330,"height":393}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_45_figure_1.jpg","caption":"Figure 1. Schematic for TiN ALE using $\\mathrm{O}_3$ and HF as the reactants. $\\mathrm{O}_3$ oxidizes the TiN substrate to form a $\\mathrm{TiO}_2$ layer on the surface. Subsequently, HF removes the $\\mathrm{TiO}_2$ layer by forming volatile $\\mathrm{TiF}_4$ and $\\mathrm{H}_2\\mathrm{O}$ reaction products.","id":"train/atomic-layer-etching/experimental-usecase/45/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/45/figure_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/Thermal Atomic Layer Etching of Titanium Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":655,"height":425,"image_format":"jpeg","image_sha256":"02a4b08c17a1c53f75a23aa69414f34815428f03313f9a5f212f7d4b218e114c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":271,"height":366},{"panel_id":"b","x":287,"y":3,"width":271,"height":363}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The left panel shows the oxidation half-cycle: O₃ reacts with TiN, oxidizing Ti³⁺ to Ti⁴⁺ and forming a self-limiting TiO₂ surface layer. Gaseous O₂, NOₓ, or N₂ are released as byproducts.\"},{\"panel_id\":\"b\",\"text\":\"The right panel shows the fluorination half-cycle: HF reacts with the TiO₂ layer, producing volatile TiF₄ and H₂O that desorb from the surface. The dashed blue line indicates the net etched layer thickness per cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"O₃ is needed because of its stronger oxidizing power. While O₂ can thermodynamically oxidize TiN, the kinetics below 350°C are too slow, and O₂ tends to form intermediate titanium oxynitride (TiOₓNᵧ) rather than pure TiO₂. Only complete conversion to TiO₂ enables efficient removal by HF in the subsequent step.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Conventional thermal ALE fluorinates surfaces to stable, non-volatile metal fluorides, then removes them via ligand-exchange. This fails for TiN because direct fluorination produces non-volatile TiF₃ (Ti³⁺). The new approach first oxidizes TiN to TiO₂ (Ti⁴⁺), allowing HF to produce volatile TiF₄ directly without ligand-exchange.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dashed blue line marks the \\\"Etched Layer Thickness\\\"—the boundary showing how much TiN material is removed after one complete ALE cycle (oxidation + fluorination).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The O₃/HF chemistry selectively etches TiN while leaving Al₂O₃, HfO₂, ZrO₂, SiO₂, and Si₃N₄ essentially unchanged.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_16.jpg","caption":"Figure 16. Schematic diagram describing the proposed etch mechanism for the $\\mathrm{TiO_2}$ ALE process using $\\mathrm{WF}_6$ and $\\mathrm{BCl}_3$ at $170^{\\circ}\\mathrm{C}$ : (1) $\\mathrm{WF}_6$ adsorbs on the thick $\\mathrm{TiO_2}$ surface, forming surface-bound $\\mathrm{TiO_yF_z}$ and $\\mathrm{WO}_x\\mathrm{F}_{y}$ . (2) $\\mathrm{BCl}_3$ volatilizes the surface metal oxy fluoride species, forming $\\mathrm{TiCl}_4$ , $\\mathrm{WCl}_2\\mathrm{O}_2$ , and $\\mathrm{BF}_3$ .","id":"train/atomic-layer-etching/experimental-usecase/46/figure_16","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_16","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_16.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":844,"height":258,"image_format":"jpeg","image_sha256":"d707d7cc9172a313e430f00199ff56151a549bb8171d5290e0526f433a6d2385","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":6,"width":840,"height":251}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_8.jpg","caption":"Figure 8. Schematic of the chemical vapor etching mechanism for $\\mathrm{TiO}_2$ films exposed to $\\mathrm{WF}_6$ at $220^{\\circ}C$ : (1) $\\mathrm{WF}_6$ adsorbs on thick $\\mathrm{TiO}_2$ surface, forming surface-bound $\\mathrm{TiO}_y\\mathrm{F}_z$ and $\\mathrm{WO}_x\\mathrm{F}_y$ ; (2) Additional $\\mathrm{WF}_6$ exposure further fluorinates the $\\mathrm{TiO}_y\\mathrm{F}_z$ and $\\mathrm{WO}_x\\mathrm{F}_y$ creating volatile $\\mathrm{WF}_2\\mathrm{O}_2$ and $\\mathrm{TiF}_4$ , etching the $\\mathrm{TiO}_2$ film.","id":"train/atomic-layer-etching/experimental-usecase/46/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_8","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":672,"height":230,"image_format":"jpeg","image_sha256":"620aee6fd52d1273833814347eb6c088ce5c58e31a853fdd675e439fa2c4e586","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":1,"width":665,"height":225}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_8_8a7ee23cdab699d89c4bf82475c30d5325598ae84783549bc0f8d81214595aa8.jpg","caption":"","id":"train/atomic-layer-etching/experimental-usecase/8/8a7ee23cdab699d89c4bf82475c30d5325598ae84783549bc0f8d81214595aa8","sample_id":"atomic-layer-etching/experimental-usecase/8/8a7ee23cdab699d89c4bf82475c30d5325598ae84783549bc0f8d81214595aa8","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/8a7ee23cdab699d89c4bf82475c30d5325598ae84783549bc0f8d81214595aa8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/8a7ee23cdab699d89c4bf82475c30d5325598ae84783549bc0f8d81214595aa8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/Controlled Layer-by-Layer Etching of MoS2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":655,"height":311,"image_format":"jpeg","image_sha256":"960774466390626ec1f1ff900d96be427c011e4675280c513f9ccd93df69ebd6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":9,"width":341,"height":275},{"panel_id":"b","x":368,"y":46,"width":288,"height":224}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_8_figure_1.jpg","caption":"Figure 1. Schematic drawing of $\\mathrm{MoS}_2$ ALET cycle for the layer-by-layer etching.","id":"train/atomic-layer-etching/experimental-usecase/8/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/8/figure_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/Controlled Layer-by-Layer Etching of MoS2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":569,"height":439,"image_format":"jpeg","image_sha256":"cb8f51329566ad9bb0ebe0c3e657fe0631598dfa3125eecd938d83be4a3566fb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":5,"width":561,"height":433}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_13_fig_1.jpg","caption":"FIG. 1. Schematic of the ALET process. The filled circles represent Cl atoms, the open circles represent Si atoms, and $+$ represent $\\mathrm{Ar}^+$ ions.","id":"train/atomic-layer-etching/simulation-usecase/13/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/13/fig_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/Molecular dynamics simulation of atomic layer etching of silicon.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":566,"height":561,"image_format":"jpeg","image_sha256":"b601c19fa3e17068f61b8cabc05e58083a57129b1292d0843cd07590f4ccf81c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":558,"height":552}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_4.jpg","caption":"Fig. 4. The schematic reaction mechanism of the thermal atomic layer etching cyclical process for $\\mathrm{Al_2O_3}$ where Step A represents the HF fluorination half-cycle and Step B represents the TMA ligand-exchange half-cycle.","id":"train/atomic-layer-etching/simulation-usecase/16/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_4","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":670,"height":350,"image_format":"jpeg","image_sha256":"5791122ce328c999c1103e1ef5673dae94cdf12d8ccf3ac75e9efbf9af447d69","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":13,"width":670,"height":337}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a thermal ALE (Atomic Layer Etching) process involving Al2O3. It shows the steps of modifying Al2O3, with HF, and etching with TMA, and repeating these steps.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Al-F\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If the purge is not long enough, remaining water in the reactor can react with TMA resulting in deposition.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The heat is applied to the system by setting a certain temperature as table temperature.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"DMAF.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_17_fig_1.jpg","caption":"Fig. 1. The thermal ALE cyclical process for $\\mathrm{Al_2O_3}$ . The process begins with Step A, in which HF fluorinates the surface of the substrate and modifies the surface producing $\\mathrm{AlF_3}$ . Following Step A is a purge step to remove $\\mathrm{H}_2\\mathrm{O}$ vapor and residual HF. Next, Step B consists of the etching cycle to convert the modified $\\mathrm{AlF_3}$ layer into the volatile species DMAF using the reagent, TMA. The cycle concludes with another purging step to remove trace TMA and DMAF produced during the etching cycle. The addition of heat allows for complete vaporization of volatile species.","id":"train/atomic-layer-etching/simulation-usecase/17/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/17/fig_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/Multiscale computational fluid dynamics modeling of thermal atomic layer etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1011,"height":516,"image_format":"jpeg","image_sha256":"46bb4939bb40cd8990401e3e762209c140a118a951d1aab30bc1245843493299","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":1008,"height":512}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a thermal ALE (Atomic Layer Epitaxy) process involving Al2O3. It shows the steps A flourination and B consisting of ligand exchange, including purge, modify, etch, and heat treatments.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Step | Action | Reactants | Products | Notes |\\n|---------|----------|-----------------|---------------|--------------------------------|\\n| Step A | Modify | HF + Al₂O₃ | AlF₃ + Al₂O₃ | Heat applied; HF reacts with Al₂O₃ surface |\\n| Purge | Purge | DMAF, TMA, N₂ | — | Removes excess reactants and byproducts |\\n| Step B | Etch | TMA + AlF₃ | Al₂O₃ exposed | Heat applied; TMA reacts with AlF₃ |\\n| Purge | Purge | H₂O, HF, N₂ | — | Clears reaction byproducts |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Step B consists of the etching cycle to convert the modified AlF 3 layer into the volatile species DMAF using the reagent, TMA. The cycle concludes with another purging step to remove trace TMA and DMAF produced during the etching cycle. The addition of heat allows for complete vaporization of volatile species.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Step A, HF fluorinates the surface of the substrate \\n2. Purge step to remove H2O vapor and residual HF\\n3. Step B consists of the etching cycle using the reagent, TMA/DMAF. \\n4. Another purging step to remove trace species.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thermal atomic layer etching (ALE) of aluminum oxide is driven by two reaction steps (Step A and Step B) using sequen- tial and self-limiting thermal reactions that are each followed by purge steps. Hydrogen fluoride (HF) and trimethylaluminum [TMA, Al(CH3 )3 ] are involved to remove the Al2O3 surface layer. The overall reaction can be described by Al 2 O 3 (s) + 6HF (g) + 4 Al (CH 3 ) 3 (g) → 6 Al F(CH 3 ) 2 (g) + 3H 2 O (g)\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_1031ad252a919bf5ebb6de059b0cb2450745c4963579f95c04bd7fd326ddfee1.jpg","caption":"","id":"train/atomic-layer-etching/simulation-usecase/20/1031ad252a919bf5ebb6de059b0cb2450745c4963579f95c04bd7fd326ddfee1","sample_id":"atomic-layer-etching/simulation-usecase/20/1031ad252a919bf5ebb6de059b0cb2450745c4963579f95c04bd7fd326ddfee1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/1031ad252a919bf5ebb6de059b0cb2450745c4963579f95c04bd7fd326ddfee1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/1031ad252a919bf5ebb6de059b0cb2450745c4963579f95c04bd7fd326ddfee1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":564,"height":370,"image_format":"jpeg","image_sha256":"7b198fee02247a86d79e8ca18d6516ecdaecac099dc4a89f614304d01a1a3263","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":559,"height":364}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_2.jpg","caption":"Figure 2. (a) Relaxed surface slab model of self-limited fluorination of $\\mathrm{TiO}_2(110)$ as $\\mathrm{TiF}_4$ . (b) Relaxed surface slab model of self-limited fluorination of $\\mathrm{TiO}_2(110)$ as $\\mathrm{TiF}_3$ .","id":"train/atomic-layer-etching/simulation-usecase/20/figure_2","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_2","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":434,"height":711,"image_format":"jpeg","image_sha256":"10d28a21ce8d4de217404a795bba52b191cb0c4a2148f34ae72cb1628f5d53aa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":23,"y":10,"width":411,"height":320},{"panel_id":"b","x":23,"y":403,"width":411,"height":308}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_23_fig_4.jpg","caption":"FIG. 4. Schematic of proposed reaction mechanism for $\\mathrm{Al}_2\\mathrm{O}_3$ ALE showing (a) Sn(acac)2 reaction and (b) HF reaction. Reprinted with permission from Lee and George, ACS Nano 9, 2061 (2015). Copyright 2015, American Chemical Society.","id":"train/atomic-layer-etching/simulation-usecase/23/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/23/fig_4","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/Review Paper -- Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":683,"height":559,"image_format":"jpeg","image_sha256":"7775d39cdcb61ab00f51e817912ef140d61bbd5113bbb66267ed49188f1d32c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":380,"y":7,"width":302,"height":550},{"panel_id":"a","x":7,"y":10,"width":334,"height":541}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_24_fig_2.jpg","caption":"Fig. 2. Proposed reaction mechanism for thermal ALE $\\mathrm{Al_2O_3}$ thin films using HF and TMA as reactants. (a) Schematic of fluorination and ligand-exchange reactions during thermal ALE; (b) Schematic of the four-center ring transition state in the ligand-exchange reaction. Reproduced from Ref. [26].","id":"train/atomic-layer-etching/simulation-usecase/24/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/24/fig_2","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"molecular structure diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/Review Paper -- Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":650,"height":602,"image_format":"jpeg","image_sha256":"b2f591ac1f1a158b422f8ab5090ac6a919294279858908efbf2cffab9be96586","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":2,"y":357,"width":573,"height":237},{"panel_id":"a","x":5,"y":5,"width":615,"height":347}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_24_fig_3.jpg","caption":"Fig. 3. Schematic of proposed reaction mechanism for $\\mathrm{Al}_2\\mathrm{O}_3$ thermal ALE showing (a) $\\mathrm{Sn}(\\mathrm{acac})_2$ reaction and (b) HF reaction. Reproduced from Ref. [16].","id":"train/atomic-layer-etching/simulation-usecase/24/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/24/fig_3","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/Review Paper -- Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1214,"height":923,"image_format":"jpeg","image_sha256":"b19550a256c9c9bcaa20ce62fa4a127d1500146e986cbf17d23e11bbebfdaf25","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":670,"y":12,"width":536,"height":859},{"panel_id":"a","x":4,"y":1,"width":671,"height":864}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_24_fig_6.jpg","caption":"Fig. 6. Schematic of proposed reaction mechanism for TMA/HF thermal ALE $\\mathrm{SiO_2}$ thin films. Reproduced from Ref. [24].","id":"train/atomic-layer-etching/simulation-usecase/24/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/24/fig_6","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/Review Paper -- Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":652,"height":564,"image_format":"jpeg","image_sha256":"9eb19bc3676c53d263b65a2597bb29182c5f7dd0ac77c4f4cd5e167fa71232a2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":648,"height":557}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_24_fig_8.jpg","caption":"Fig. 8. Schematic of proposed reaction mechanism for thermal ALE W thin film using using $\\mathrm{O_2 / O_3}$ , $\\mathrm{BCl}_3$ and HF: (a) oxidation of W using $\\mathrm{O_2 / O_3}$ , (b) conversion of $\\mathrm{WO_3}$ to $\\mathrm{B_2O_3}$ using $\\mathrm{BCl}_3$ with volatile $\\mathrm{WO_xCl_y}$ , and (c) fluorination of $\\mathrm{B_2O_3}$ by HF to form volatile $\\mathrm{BF}_3$ and $\\mathrm{H_2O}$ . Reproduced from Ref. [25].","id":"train/atomic-layer-etching/simulation-usecase/24/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/24/fig_8","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/Review Paper -- Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":912,"height":642,"image_format":"jpeg","image_sha256":"7b6bd9799cc4d5515ebff99083dcfbe59af2885b674e1fc372d87473ca0e91ef","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":106,"y":469,"width":804,"height":174},{"panel_id":"b","x":97,"y":233,"width":814,"height":204},{"panel_id":"a","x":89,"y":10,"width":817,"height":182}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_24_fig_9.jpg","caption":"Fig. 9. Schematic for TiN ALE using $\\mathrm{O_3}$ and HF as the reactants. Reproduced from Ref. [20].","id":"train/atomic-layer-etching/simulation-usecase/24/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/24/fig_9","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/Review Paper -- Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":650,"height":428,"image_format":"jpeg","image_sha256":"f157df2ecc1e33ad6fb67d88e7f3fff7c62af686f784b558a0c5212f28557e58","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":342,"y":6,"width":308,"height":421},{"panel_id":"a","x":2,"y":3,"width":322,"height":424}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_1.jpg","caption":"Fig. 1. Schematic of the assumed surface reactions during thermal ALE of $\\mathrm{Al_2O_3}$ using HF and TMA as investigated in the present study.","id":"train/atomic-layer-etching/simulation-usecase/29/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":605,"height":742,"image_format":"jpeg","image_sha256":"9e9de8200e46a5db6aa68cc72a0d4f16014f373f022f73f4b9bc47569bbdcd8c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":3,"width":596,"height":731}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_31_561341d49608f303777cbb6ee1889993fb0d47ba4e0aabe261be08f38c08bbe3.jpg","caption":"","id":"train/atomic-layer-etching/simulation-usecase/31/561341d49608f303777cbb6ee1889993fb0d47ba4e0aabe261be08f38c08bbe3","sample_id":"atomic-layer-etching/simulation-usecase/31/561341d49608f303777cbb6ee1889993fb0d47ba4e0aabe261be08f38c08bbe3","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/561341d49608f303777cbb6ee1889993fb0d47ba4e0aabe261be08f38c08bbe3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/561341d49608f303777cbb6ee1889993fb0d47ba4e0aabe261be08f38c08bbe3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/Thermodynamics of Atomic Layer Etching Chemistry on Copper and Nickel Surfaces from First Principles.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":666,"height":381,"image_format":"jpeg","image_sha256":"40813a39a116149a10594a2b4bed92314c711a7c7f09676d51fb23a0af02f33c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":662,"height":377}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a surface reaction mechanism, likely a half-cycle of Atomic Layer Deposition (ALD) or Etching. It depicts precursor molecules approaching the surface (indicated by downward dashed arrows), reacting with the green and red lattice sites, and the subsequent release of volatile byproducts into the gas phase (indicated by upward dashed arrows).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The species moving downwards are intact precursors containing ligands, while the species moving upwards are smaller byproducts formed by the loss of those ligands during the surface reaction.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure depicts a cyclic surface reaction process. Precursor molecules approach and adsorb onto the surface, as indicated by downward arrows. These adsorbed species participate in surface-mediated reactions, forming new surface-bound intermediates. Reaction products are then released from the surface, shown by upward arrows, completing the adsorption–reaction–desorption cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Adsorption of precursor molecules onto the surface.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_31_figure_1.jpg","caption":"Figure 1. Plasma-thermal atomic layer etching process depicted here for the Ni/O/formic acid system. The metal surface (A) is first subjected to a plasma ion bombardment (B), forming a surface activation layer until saturation (C). Etchant molecules are then introduced (D) after the plasma has been switched off. The etchants adsorb dissociatively on the activated surface (E), etching the top layers by the formation of volatile metal complexes and water. The reaction stops when all of the modifier atoms are consumed, exposing the metal surface again (F).","id":"train/atomic-layer-etching/simulation-usecase/31/figure_1","sample_id":"atomic-layer-etching/simulation-usecase/31/figure_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"},{"panel_id":"d","label":"reaction scheme"},{"panel_id":"e","label":"reaction scheme"},{"panel_id":"f","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/Thermodynamics of Atomic Layer Etching Chemistry on Copper and Nickel Surfaces from First Principles.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":1008,"height":506,"image_format":"jpeg","image_sha256":"b9bc48ab1b9d458b940cde797b9e618966e83be174d4c87cdb499e930e9bb8de","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":89,"width":271,"height":120},{"panel_id":"b","x":372,"y":2,"width":269,"height":203},{"panel_id":"c","x":737,"y":82,"width":271,"height":127},{"panel_id":"d","x":8,"y":286,"width":271,"height":172},{"panel_id":"e","x":372,"y":251,"width":254,"height":215},{"panel_id":"f","x":737,"y":264,"width":271,"height":203}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic of the initial clean Ni metal surface prior to plasma exposure.\"},{\"panel_id\":\"b\",\"text\":\"Schematic illustrating plasma ion bombardment of the Ni surface, initiating surface activation.\"},{\"panel_id\":\"c\",\"text\":\"Schematic showing saturation of the activated surface layer following continued plasma exposure.\"},{\"panel_id\":\"d\",\"text\":\"Schematic depicting introduction of etchant molecules after the plasma has been switched off.\"},{\"panel_id\":\"e\",\"text\":\"Schematic of the dissociative adsorption of etchant molecules on the activated surface, forming volatile metal complexes and water.\"},{\"panel_id\":\"f\",\"text\":\"Schematic showing termination of the reaction after consumption of modifier atoms and re-exposure of the Ni metal surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After the plasma has been switched off.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The underlying Ni metal surface is exposed again, similar to its initial state.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reaction between the adsorbed etchant molecules and the activated surface metal atoms forms complex molecules with high vapor pressure. These volatile complexes can easily desorb from the surface into the gas phase. This desorption effectively removes the top layer of metal atoms, resulting in the controlled etching of the material.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Plasma ion bombardment.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_5a0741b9cb31104e3bf0c320d41212d88295582f7162c53ccbcf255fe718fc88.jpg","caption":"","id":"train/atomic-layer-etching/simulation-usecase/33/5a0741b9cb31104e3bf0c320d41212d88295582f7162c53ccbcf255fe718fc88","sample_id":"atomic-layer-etching/simulation-usecase/33/5a0741b9cb31104e3bf0c320d41212d88295582f7162c53ccbcf255fe718fc88","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/5a0741b9cb31104e3bf0c320d41212d88295582f7162c53ccbcf255fe718fc88.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/5a0741b9cb31104e3bf0c320d41212d88295582f7162c53ccbcf255fe718fc88.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":355,"height":420,"image_format":"jpeg","image_sha256":"4e4f0b8be8f04a68e76c95be8b41cdbe9582c6e167a870296f22d2799ee4fdc9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":355,"height":420}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_fa8b87c2b1d5f083ea93e86b3b26d0d416aaf00adc82d1f1c672e411405f4af6.jpg","caption":"Plasma etching","id":"train/atomic-layer-etching/simulation-usecase/33/fa8b87c2b1d5f083ea93e86b3b26d0d416aaf00adc82d1f1c672e411405f4af6","sample_id":"atomic-layer-etching/simulation-usecase/33/fa8b87c2b1d5f083ea93e86b3b26d0d416aaf00adc82d1f1c672e411405f4af6","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/fa8b87c2b1d5f083ea93e86b3b26d0d416aaf00adc82d1f1c672e411405f4af6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/fa8b87c2b1d5f083ea93e86b3b26d0d416aaf00adc82d1f1c672e411405f4af6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":928,"height":303,"image_format":"jpeg","image_sha256":"5c8b16e8514fb99bd43a353fbc044cdee2cfdb79ffadd551c418822d273d996a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":928,"height":303}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_figure_1.jpg","caption":"Figure 1. Schematic of the data set construction for NNP training. Initial baseline structures cover diverse equilibrium configurations. Reaction-specific sets are captured via guided MD, while general-purpose sets are derived from high-temperature MD simulations. Iterative refinements of the NNP are conducted using trajectories of NNP-based MD simulations.","id":"train/atomic-layer-etching/simulation-usecase/33/figure_1","sample_id":"atomic-layer-etching/simulation-usecase/33/figure_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":870,"height":658,"image_format":"jpeg","image_sha256":"d88589905a74addf916f0cb84b20ea645aa111a51e7250ed4c09a1b9c54ddbb5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":870,"height":658}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_figure_11.jpg","caption":"Figure 11. Schematic of atomistic mechanism in $\\mathrm{Si}_3\\mathrm{N}_4$ etching (a) at low angle of incidence, and (b) high angle of incidence.","id":"train/atomic-layer-etching/simulation-usecase/33/figure_11","sample_id":"atomic-layer-etching/simulation-usecase/33/figure_11","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":416,"height":423,"image_format":"jpeg","image_sha256":"b72c100b5c9e4c4fc895e57a3c11fc341a78b023ceef854d5d4223950281d3ba","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":416,"height":423}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_5_fig_1.jpg","caption":"Fig. 1 DFT and Tersoff calculated energy change during $\\mathrm{Cl}_g$ adsorption and desorption from $\\mathrm{Ge_9Cl_{12}}$ cluster. Light green: Cl. Cyan: Ge. H(0,2) and H(0,3) marks the number of neighbour atoms $k$ of Cl and Ge type for the surface Ge atom, not including its neighbour atom $j$ . For example, H(0,2) means the surface Ge has zero Cl neighbours if not including the adsorbed Cl atom $j$ , and has 2 other Ge atoms as its neighbours.","id":"train/atomic-layer-etching/simulation-usecase/5/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/5/fig_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/Computational modelling of atomic layer etching of chlorinated germanium surfaces by argon.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":417,"height":333,"image_format":"jpeg","image_sha256":"72ec5ed8dc8cbe96957e38f8870ae62f4cd0e12c652d0f8d4bc7671498269661","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":5,"width":409,"height":326}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_25_f0c41f11e9c5ab863fee1ff70b7d7442935b0ee8edf971cfbc7285ccc6107b34.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/25/f0c41f11e9c5ab863fee1ff70b7d7442935b0ee8edf971cfbc7285ccc6107b34","sample_id":"atomic-layer-deposition/experimental-usecase/25/f0c41f11e9c5ab863fee1ff70b7d7442935b0ee8edf971cfbc7285ccc6107b34","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"multiple line chart"},{"panel_id":"c","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A reaction scheme illustrating the synthesis of Sn1-xGexOy or Zn1-xGexOy Electron Selective Layer (ESL) by ALD\"},{\"panel_id\":\"b\",\"text\":\"A line chart showing the optical absorption of Ge doped electron selective layer as a function of energy\"},{\"panel_id\":\"c\",\"text\":\"A line chart depicting the solar cell efficiency of Sn1-xGexOy and Zn1-xGexOy as a function of Ge content of ESL.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Process Step | Description |\\n|--------------------------------------|--------------------------------------------------|\\n| Precursors | Ge(N(CH₃)₂)₄ and Sn(N(CH₃)₂)₄ or Zn(C₂H₅)₂ |\\n| Reactant | H₂O |\\n| Deposited Layer | Sn₁₋ₓGeₓOᵧ or Zn₁₋ₓGeₓOᵧ (Electron Selective Layer, ESL) |\\n| Substrate | (Ag, Cu)(In, Ga)Se₂ |\\n| Method | Atomic Layer Deposition (ALD) Supercycle |\"},{\"panel_id\":\"b\",\"text\":\"| Ge Content in ESL | Optical Absorption Shift |\\n|--------------------|---------------------------|\\n| Low | Lower absorption edge |\\n| High | Higher absorption edge |\"},{\"panel_id\":\"c\",\"text\":\"| Ge Content in ESL | Sn₁₋ₓGeₓOᵧ Efficiency | Zn₁₋ₓGeₓOᵧ Efficiency |\\n|--------------------|--------------------------|--------------------------|\\n| Low | Moderate | Low |\\n| Medium | Peak | Increasing |\\n| High | Decline | Peak |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the ALD supercycle approach, the GeOy ALD cycle was interchanged with either ZnO or SnOy cycles to deposit TGO and ZGO with varying conduction\\nband positions (Ec), respectively\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To ensure (Ag,Cu)(In,Ga)Se2 (ACIGS) solar cell compatibility, a 120 °C ALD process was developed for GeOy using Ge(N(CH3)2)4 and H2O as precursors.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The open-circuit voltage initially increased as the Ge content of the TGO and ZGO films increased due to the ESL Ec simultaneously shifting up from the low position in ZnO or SnOy to match the ACIGS Ec. As the Ge content increased further, the fill factor (FF) of these devices decreased since the ESL Ec became positioned significantly above the ACIGS Ec, forming an energy barrier as seen from ACIGS. As a result, the efficiency of the ACIGS solar cell peaked for an intermediate Ge content for both TGO and ZGO\"}]}]","bbox":[{"panel_id":"c","x":603,"y":17,"width":234,"height":233},{"panel_id":"b","x":312,"y":13,"width":287,"height":240},{"panel_id":"a","x":5,"y":10,"width":306,"height":244}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/f0c41f11e9c5ab863fee1ff70b7d7442935b0ee8edf971cfbc7285ccc6107b34.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/f0c41f11e9c5ab863fee1ff70b7d7442935b0ee8edf971cfbc7285ccc6107b34.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/Adam Hultqvist et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":839,"height":253,"image_format":"jpeg","image_sha256":"bd5656f8e0dcbd6f3d77322b2e1cdf82c5fec774ef2830996d548e58f3b56a30","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_2.jpg","caption":"Figure 2. (a) Proposed deposition mechanism of GeSe films from $\\mathrm{HGeCl}_3$ and $\\mathrm{GeCl}_2$ with $\\mathrm{HCl}$ on the film surface. (b)-(e) Saturation behavior in the conventional ALD through the Ge and Se precursors' pulse and purge time split.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_2","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"multi-axis chart"},{"panel_id":"d","label":"multi-axis chart"},{"panel_id":"e","label":"multi-axis chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":84,"y":15,"width":858,"height":777},{"panel_id":"b","x":11,"y":900,"width":515,"height":397},{"panel_id":"c","x":540,"y":902,"width":517,"height":395},{"panel_id":"d","x":3,"y":1364,"width":526,"height":395},{"panel_id":"e","x":549,"y":1366,"width":504,"height":398}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":1058,"height":1767,"image_format":"jpeg","image_sha256":"98e18f157a91d4e377d972288f0801c896234288acee840b0a9d0c8f198abfe4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_34_8c119476fea7a631497f281ecf723864f30e6219a21cd174c4df5d827beff926.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/34/8c119476fea7a631497f281ecf723864f30e6219a21cd174c4df5d827beff926","sample_id":"atomic-layer-deposition/experimental-usecase/34/8c119476fea7a631497f281ecf723864f30e6219a21cd174c4df5d827beff926","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":561,"height":311}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/8c119476fea7a631497f281ecf723864f30e6219a21cd174c4df5d827beff926.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/8c119476fea7a631497f281ecf723864f30e6219a21cd174c4df5d827beff926.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/M. J. Pieters et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":561,"height":311,"image_format":"jpeg","image_sha256":"aa2a31dbe3714451b141528b2fbbf816a9862cf4630ae05b9ee321a2b6a2ef5d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_34_figure_4.jpg","caption":"Figure 4. Schematics of the reaction mechanisms occurring during the (a) LiHMDS + $\\mathrm{O}_2^*$ , (b) LiHMDS + $\\mathrm{H}_2\\mathrm{O}$ , (c) LiHMDS + $\\mathrm{O}_2^*$ + $\\mathrm{H}_2^*$ , and (d) LiHMDS + $\\mathrm{H}_2^*$ + $\\mathrm{O}_2^*$ processes.","id":"train/atomic-layer-deposition/experimental-usecase/34/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/34/figure_4","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"},{"panel_id":"d","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":8,"width":553,"height":483},{"panel_id":"b","x":610,"y":10,"width":547,"height":492},{"panel_id":"c","x":6,"y":521,"width":570,"height":643},{"panel_id":"d","x":600,"y":517,"width":552,"height":641}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/34/M. J. Pieters et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":1164,"height":1170,"image_format":"jpeg","image_sha256":"ec274ce22df3f5b5250bba18aa26f5abc0bbe2e484432068ba1236eb4d1c7695","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_50_fig_1.jpg","caption":"Fig. 1 A schematic representation of two ALD supercycles used to dope the $\\mathrm{ZnO}$ films with a doping element, $\\mathbf{X}$ $\\mathbf{X} = \\mathbf{Al}$ , B, Ga, etc.). For uniform doping, a constant value of $m$ is used $(m_{1} = m_{2} = \\dots = m_{n})$ whereas for films with graded doping, the value of $m$ can be varied. Details of the ALD processes are shown in the lower part of the figure: the process for the $\\mathrm{ZnO}$ based material comprises two half-cycles in which DEZ and $\\mathrm{H}_2\\mathrm{O}$ are dosed; in most cases, the ALD process of the doping material also comprises two doses: dopant precursor dosing and $\\mathrm{H}_2\\mathrm{O}$ dosing. Other co-reactants such as $\\mathrm{O}_3$ or $\\mathrm{O}_2$ plasma can also be employed instead of $\\mathrm{H}_2\\mathrm{O}$ , for both the $\\mathrm{ZnO}$ and the doping element.","id":"train/atomic-layer-deposition/experimental-usecase/50/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/50/fig_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a supercycle reaction scheme involving ZnO and doping element X, with labeled cycles and time intervals.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Step | ZnO Cycle | Dopant Cycle |\\n|------------|----------------------|----------------------|\\n| Precursor | DEZ | X |\\n| Reactant | H₂O | H₂O |\\n| Purge | Purge | Purge |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In principle, the concept of supercycle is effective when the two individual ALD processes (i.e., the base material ALD process and the dopant ALD process) are compatible with each other. Additionally, the ALD supercycle should be in saturation when the two individual ALD processes are in saturation.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"To dope ZnO with boron, it is not necessary to form B2O3 as long as the precursor is able to incorporate B into ZnO films.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The parameters of the ALD process for the B dopant were tuned during the ZnO doping ALD process at 150 ° C using a supercycle with m = 4 (i.e., 5 cycles consisting of 4 ZnO + 1 TIB) and using the already optimised ZnO ALD process parameters (50 ms DEZ dose, 5 s purge, 20 ms H2O dose, 6 s purge).\"}]}]","bbox":[{"panel_id":"a","x":0,"y":4,"width":1083,"height":506}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/Garcia-Alonso et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":1089,"height":514,"image_format":"jpeg","image_sha256":"2c359cbda0ff9dafe2a8bed57dd7ba8cbedd4bed959c64bbdb6019b0fc9233d5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_66_0f17ce2d6089bb35707b890f75e18e79f6625a556ecf2ad207b3d1cf06f22559.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/66/0f17ce2d6089bb35707b890f75e18e79f6625a556ecf2ad207b3d1cf06f22559","sample_id":"atomic-layer-deposition/experimental-usecase/66/0f17ce2d6089bb35707b890f75e18e79f6625a556ecf2ad207b3d1cf06f22559","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"bar chart"},{"panel_id":"c","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A molecular structure diagram illustrating the ALD cycle involving ZnO:TMO and its precursors.\"},{\"panel_id\":\"b\",\"text\":\"A scatter plot showing the statistical distribution of θ_Kerr for ALD ZnO:Fe.\"},{\"panel_id\":\"c\",\"text\":\"P-V hysteresis loop for ZnO:Fe\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"| Material | Relative frequency (%) | 01000 mdeg |\\n|---|---|---|---|----|\\n| ALD ZnO | 100% | - | - | - |\\n|ALD ZnO:Fe | - | 45% | 22% | 33% |\"},{\"panel_id\":\"c\",\"text\":\"| Applied Voltage (V) | P (µC/cm²) |\\n|---|---|\\n|-3 |-40 |\\n|-2 |-30 |\\n|-1 |-20 |\\n|0 |-10 |\\n|1 |0 |\\n|2 |10 |\\n|3 |20 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ZnO doped with transition metals (Co, Fe, or Ni) that have non-compensated electron spins attracts particular\\ninterest as it can induce various magnetic phenomena and behaviors\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"From the results it is observed that Fe-doped ZnO also demonstrates a ferroelectric behavior.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The present study provides an extended analysis of the magnetooptical MO Kerr effect and the dielectric properties of (Co, Fe, or Ni)-doped ZnO films prepared by ALD. The structural, magnetooptical, and dielectric properties were considered in relation to the technological details of the ALD process and the corresponding dopant effects. All doped samples show a strong MO Kerr behavior with a substantial magnetization response and very high values of the Kerr polarization angle, especially in the case of ZnO/Fe\"}]}]","bbox":[{"panel_id":"a","x":7,"y":8,"width":330,"height":330},{"panel_id":"b","x":335,"y":8,"width":342,"height":151},{"panel_id":"c","x":335,"y":161,"width":343,"height":178}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/0f17ce2d6089bb35707b890f75e18e79f6625a556ecf2ad207b3d1cf06f22559.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/0f17ce2d6089bb35707b890f75e18e79f6625a556ecf2ad207b3d1cf06f22559.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/Paskaleva et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"66","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":1067,"height":339,"image_format":"jpeg","image_sha256":"c6cd3cc3a3a4082adef641bb09a84581a808e7c64a8c6b9b65d08d9e52c46681","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_12_ca270fa3709113a73088b324c42da03af3f4bbe859c7b315f3935c584adc29f0.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/12/ca270fa3709113a73088b324c42da03af3f4bbe859c7b315f3935c584adc29f0","sample_id":"atomic-layer-deposition/simulation-usecase/12/ca270fa3709113a73088b324c42da03af3f4bbe859c7b315f3935c584adc29f0","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":6,"width":876,"height":475}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/ca270fa3709113a73088b324c42da03af3f4bbe859c7b315f3935c584adc29f0.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/ca270fa3709113a73088b324c42da03af3f4bbe859c7b315f3935c584adc29f0.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. Mukhopadhyay et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":884,"height":483,"image_format":"jpeg","image_sha256":"d0771ea8964d8061682ac3a1b49755589cb2e63d6c69d73484ed64e3adaf7cfe","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_12_dbca0f677b67a8938436513d8ced215c871203961972b5ccd0382c672ee5f0fe.jpg","caption":"Scheme 2. Cascade of Reactions Occurring from the Aquo-trichloro-hafnium Complexa","id":"train/atomic-layer-deposition/simulation-usecase/12/dbca0f677b67a8938436513d8ced215c871203961972b5ccd0382c672ee5f0fe","sample_id":"atomic-layer-deposition/simulation-usecase/12/dbca0f677b67a8938436513d8ced215c871203961972b5ccd0382c672ee5f0fe","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":2,"width":917,"height":896}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/dbca0f677b67a8938436513d8ced215c871203961972b5ccd0382c672ee5f0fe.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/images/dbca0f677b67a8938436513d8ced215c871203961972b5ccd0382c672ee5f0fe.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/12/Atashi B. Mukhopadhyay et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":925,"height":900,"image_format":"jpeg","image_sha256":"5b5def0c4d2563b977b44e095db03f1af7b30f40e4aa69b6f7d31270bba8d63e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_15_4d4f406e9932876c1e7d842c8a2c6e5c2ea735e3033a559de968675a1eb78e85.jpg","caption":"Scheme 1. The fourteen pathways of the four chlorine loss reactions. The first chlorine loss reactions (R1a and R2b), the second chlorine loss reactions (R2a, R2b, R3a, R3b), the third chlorine loss reactions (R4a, R4b, R5a, R5b) and the fourth chlorine loss reactions (R6a, R6b, R7a, R7b).","id":"train/atomic-layer-deposition/simulation-usecase/15/4d4f406e9932876c1e7d842c8a2c6e5c2ea735e3033a559de968675a1eb78e85","sample_id":"atomic-layer-deposition/simulation-usecase/15/4d4f406e9932876c1e7d842c8a2c6e5c2ea735e3033a559de968675a1eb78e85","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":8,"width":504,"height":573},{"panel_id":"b","x":504,"y":1,"width":889,"height":676}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/4d4f406e9932876c1e7d842c8a2c6e5c2ea735e3033a559de968675a1eb78e85.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/images/4d4f406e9932876c1e7d842c8a2c6e5c2ea735e3033a559de968675a1eb78e85.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/15/Chengxing Cui et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1397,"height":681,"image_format":"jpeg","image_sha256":"de36780e0e2f2698c7dd44b4a4e78a47f652c60bf531ebf0e6f5afd9f206d73a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_23_fig2.jpg","caption":"Fig.2 Schematic of the reaction process of $\\mathrm{AlO}_x$ ALD.","id":"train/atomic-layer-deposition/simulation-usecase/23/fig2","sample_id":"atomic-layer-deposition/simulation-usecase/23/fig2","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":1,"width":650,"height":376}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/Jiaqiang Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":653,"height":378,"image_format":"jpeg","image_sha256":"e0473ee6932133beb71da3a6143f4b3f608b6d76d329bcae1f52fd3683a7c148","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_23_fig_4.jpg","caption":"Fig. 4 Diagram of the elementary reaction steps of Scheme 1.","id":"train/atomic-layer-deposition/simulation-usecase/23/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/23/fig_4","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":0,"width":643,"height":311}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/Jiaqiang Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":650,"height":314,"image_format":"jpeg","image_sha256":"76aae8f598d1c610563186f37da147cb573370b5b4b67d629b6aed95ea967652","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_23_fig_7.jpg","caption":"Fig. 7 (a) Schematic of DMAI decomposition; (b) $\\mathsf{AlO}_x$ deposition rates on different Pt sites at $300 - 425\\mathrm{K}$ .","id":"train/atomic-layer-deposition/simulation-usecase/23/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/23/fig_7","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":4,"width":233,"height":309},{"panel_id":"b","x":240,"y":3,"width":408,"height":309}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/23/Jiaqiang Yang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":652,"height":314,"image_format":"jpeg","image_sha256":"0cf4186d0654784e022a7d9a6943c8a2540245b74c62c0a2edd2cb55ceb7059d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_25_figure_1.jpg","caption":"Figure 1. TMA reaction pathways (adapted from Travis and Adomaitis $^{34}$ ).","id":"train/atomic-layer-deposition/simulation-usecase/25/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/25/figure_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"},{"panel_id":"d","label":"reaction scheme"},{"panel_id":"e","label":"reaction scheme"},{"panel_id":"f","label":"reaction scheme"},{"panel_id":"g","label":"reaction scheme"},{"panel_id":"h","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":2,"width":496,"height":112},{"panel_id":"b","x":1,"y":115,"width":538,"height":121},{"panel_id":"c","x":1,"y":235,"width":618,"height":129},{"panel_id":"d","x":2,"y":365,"width":562,"height":132},{"panel_id":"e","x":2,"y":484,"width":611,"height":137},{"panel_id":"f","x":6,"y":618,"width":528,"height":126},{"panel_id":"g","x":10,"y":746,"width":553,"height":118},{"panel_id":"h","x":9,"y":868,"width":612,"height":97}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/Kristopher S. Brown et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":622,"height":969,"image_format":"jpeg","image_sha256":"3aeae4f9eab03561786dc1266f5283044da52feca5e865fe10fa0113c5f6a440","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_27_figure_4.jpg","caption":"Figure 4. Elementary surface reactions during PEALD deposition of $\\mathrm{SiO_2}$ film using a bis-diethylaminosilane (BDEAS) precursor. P1 and P2 are products of the precursor deposition. S1 and S2 are products of the plasma pulse.","id":"train/atomic-layer-deposition/simulation-usecase/27/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/27/figure_4","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure depicts the elementary surface reactions occurring during PEALD of SiO₂ using the bis-diethylaminosilane (BDEAS) precursor. It shows precursor adsorption and ligand-exchange reactions that form intermediates P1 and P2, followed by plasma-activated reactions producing S1 and S2. Together, these steps represent the precursor half-cycle and plasma half-cycle in the overall PEALD mechanism.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"These elementary reactions reveal how the BDEAS precursor interacts with surface hydroxyls and how plasma activation removes remaining ligands to regenerate reactive sites. Understanding each step—precursor adsorption, ligand exchange, and plasma clean-up—is essential for controlling film composition, minimizing impurities, and optimizing the self-limiting growth characteristic of PEALD. The intermediates P1, P2, S1, and S2 provide insight into how the surface evolves during each half-cycle, directly influencing film quality and growth per cycle.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"P1 and P2.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ligand exchange of –NEt₂ groups, Formation of Si–O surface bonds, Generation of P1 and P2 intermediates, Cleavage of residual ligands during plasma exposure, Formation of S1 and S2 surface species\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":964,"height":552}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/27/Martin Becker et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":964,"height":552,"image_format":"jpeg","image_sha256":"793a8a8b60928a82410ec61065c416c6098be5617ec82aefb71b0911d8ebf6f4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_28_fig1.jpg","caption":"Fig.1.Reaction steps of $\\mathrm{MO}_2$ film growth in the ALD process: (1a) the formation of a chemisorbed $\\mathrm{MCl}_3$ group,1b the formation of a chemisorbed $\\mathrm{MCl}_2$ group,2a the hydrolysis of the first M-Cl bond in a chemisorbed $\\mathrm{MCl}_2$ group, and (2b) the hydrolysis of the second M-Cl bond in a chemisorbed $\\mathrm{MCl}_2$ group.","id":"train/atomic-layer-deposition/simulation-usecase/28/fig1","sample_id":"atomic-layer-deposition/simulation-usecase/28/fig1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":4,"width":575,"height":193},{"panel_id":"b","x":5,"y":204,"width":576,"height":205}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/Maxim Deminsky et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":580,"height":411,"image_format":"jpeg","image_sha256":"a007f81d64e4d0d81f8dcdac23d108f7116cc030ef5134127c4342360ff2e2d8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_28_fig2.jpg","caption":"Fig.2.Water desorption reaction.","id":"train/atomic-layer-deposition/simulation-usecase/28/fig2","sample_id":"atomic-layer-deposition/simulation-usecase/28/fig2","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":9,"y":3,"width":434,"height":145}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/Maxim Deminsky et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":445,"height":150,"image_format":"jpeg","image_sha256":"51ff29bc58514a229c9e5b476b73b0722ee1f35d1215f9c961b4f741ecccb556","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_28_fig_4.jpg","caption":"Fig. 4. Schematic reaction path profile of the gas-surface reactions via a strongly adsorbed precursor $\\mathrm{AB / s / }$ (a) decomposition of $\\mathrm{AB / s / }$ to products $\\mathrm{C / s / }$ and $\\mathrm{D}$ proceeds via a rigid transition complex; (b) decomposition via a loose transition complex. $\\mathrm{TC_{ad}}$ and $\\mathrm{TC_f}$ are transition complexes for adsorption of $\\mathrm{B}$ at $\\mathrm{A / s / }$ and for $\\mathrm{AB / s / }$ decomposition to products $\\mathrm{C / s / }$ and $\\mathrm{D}$","id":"train/atomic-layer-deposition/simulation-usecase/28/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/28/fig_4","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a reaction pathway. B+A/s/ transformed into AB/s/ after energy Ead is released. A transition state is reached after a energy barrier is overcome releasing D+C/s/.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates a reaction pathway. B+A/s/ transformed into AB/s/ after energy Ead is released. A transition state is reached after enough energy is added to the system, releasing D+C/s/.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|qr|Urp|\\n|---|---|\\n|B+A/s/|0|\\n|AB/s/|-Ead|\\n|TCf|-Ef|\\n|D+C/s/|-Er|\"},{\"panel_id\":\"b\",\"text\":\"|qr|Urp|\\n|---|---|\\n|B+A/s/|0|\\n|AB/s/|-Ead|\\n|D+C/s/|Er|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The required energy is Ead-Ef. This energy can be applied by first setting a certain table temperature.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After the transition state has been reached, reaction products D will be formed, leaving the C/s surface.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ead.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"C/s\"}]}]","bbox":[{"panel_id":"a","x":11,"y":8,"width":419,"height":362},{"panel_id":"b","x":474,"y":8,"width":440,"height":362}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/28/Maxim Deminsky et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":914,"height":370,"image_format":"jpeg","image_sha256":"00e8e6f57b7ace2cf7ebf7bffa3554a4c64d991784b32786c1c3cbb849ca6a65","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_4681214406d9cc366cad55f679603fc12f8cb43075cdabef079cf5f2a46c2e8b.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/30/4681214406d9cc366cad55f679603fc12f8cb43075cdabef079cf5f2a46c2e8b","sample_id":"atomic-layer-deposition/simulation-usecase/30/4681214406d9cc366cad55f679603fc12f8cb43075cdabef079cf5f2a46c2e8b","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This subfigure shows the formation of a triply bonded (TB) TMPS configuration on amorphous silica. Three surface silanol groups react with TMPS, releasing three methanol molecules and forming a TB SMI with Si−O linkages. The right step shows conceptual removal of the SMI (−SiPr) and hydrogen saturation (+3 H•) to generate the \\\"TB residue\\\" structure for energy calculations.\"},{\"panel_id\":\"b\",\"text\":\"This subfigure illustrates how the TB bonding penalty (ΔE_TB-pen) is calculated: the energy difference between the \\\"Relaxed Model\\\" (pristine optimized surface) and the \\\"TB Residue\\\" (surface geometry after TB SMI removal). This quantifies the strain introduced into the silica framework by TB bonding.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TB bonding penalty quantifies the energetic cost of deforming the silica surface when three silanols must reposition to bond to a single TMPS molecule. By comparing the TB residue energy to the relaxed surface, researchers isolate how much of the total reaction energy arises from surface strain. This is critical for predicting which TB configurations are thermodynamically accessible under ALD conditions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A.1-O:123 has a penalty of only 45 kJ mol⁻¹, while A.1-O:146 shows 162 kJ mol⁻¹ and A.1-O:245 exhibits 459 kJ mol⁻¹, indicating TB formation is highly site-specific.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dashed lines represent hydrogen bonds between adjacent surface silanol groups, which form a network that stabilizes the silica surface structure.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The TB configuration consumes all three methoxy groups, maximizing chemical passivation and reducing potential nucleation sites for Al₂O₃ growth.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":6,"width":654,"height":174},{"panel_id":"b","x":83,"y":186,"width":482,"height":135}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/4681214406d9cc366cad55f679603fc12f8cb43075cdabef079cf5f2a46c2e8b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/4681214406d9cc366cad55f679603fc12f8cb43075cdabef079cf5f2a46c2e8b.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":658,"height":322,"image_format":"jpeg","image_sha256":"e95beacf3da62c6ec5531cc7e77a07a590a60e71aa338aa8f202cdea1f187d3c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_a9607840c6d18561d4f18b7a1f06f1ae28d6db1defddf1c5004de640af0d0642.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/30/a9607840c6d18561d4f18b7a1f06f1ae28d6db1defddf1c5004de640af0d0642","sample_id":"atomic-layer-deposition/simulation-usecase/30/a9607840c6d18561d4f18b7a1f06f1ae28d6db1defddf1c5004de640af0d0642","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"},{"panel_id":"d","label":"reaction scheme"},{"panel_id":"e","label":"reaction scheme"},{"panel_id":"f","label":"reaction scheme"},{"panel_id":"g","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The left column (a-d) shows reactions with Al precursors (TMA or TEA, where X = Me or Et). Starting with (a), representing RBO opening by ligand exchange\"},{\"panel_id\":\"b\",\"text\":\"Si_SMI−O_surf bond disintegration\"},{\"panel_id\":\"c\",\"text\":\"C−O bond intersection at methoxy groups\"},{\"panel_id\":\"d\",\"text\":\"methoxy−Si_SMI intersection producing aluminum alkoxide.\"},{\"panel_id\":\"e\",\"text\":\"The right column (e-g) shows hydrolysis reactions with water. Starting with (e), representing RBO hydrolysis to form silanols\"},{\"panel_id\":\"f\",\"text\":\"Si_SMI−O_surf hydrolysis\"},{\"panel_id\":\"g\",\"text\":\"methoxy hydrolysis.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"},{\"panel_id\":\"g\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It indicates that X represents the alkyl ligands of the aluminum precursors—methyl (Me) for trimethylaluminum (TMA) or ethyl (Et) for triethylaluminum (TEA).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The paper shows that pulsing water before the inhibitor can hydrolyze RBOs into silanols (reaction E), removing this highly reactive species and potentially improving blocking layer performance.\"}]},{\"panel_id\":\"g\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Reactions A–D involve Al precursors (TMA or TEA) attacking the blocking layer through ligand exchange reactions, while reactions E–G involve hydrolysis by the water co-reactant.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Reaction B (Si_SMI−O_surf disintegration) poses the greatest threat because it directly breaks the bond anchoring the SMI to the surface, potentially detaching inhibitor molecules and creating gaps in the blocking layer. This exposes underlying silanols to Al precursors, enabling nucleation of Al₂O₃ growth on the non-growth surface.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":8,"width":438,"height":120},{"panel_id":"b","x":2,"y":134,"width":472,"height":147},{"panel_id":"c","x":2,"y":278,"width":170,"height":145},{"panel_id":"d","x":158,"y":279,"width":190,"height":146},{"panel_id":"e","x":463,"y":12,"width":173,"height":125},{"panel_id":"f","x":476,"y":133,"width":164,"height":147},{"panel_id":"g","x":472,"y":282,"width":169,"height":145}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/a9607840c6d18561d4f18b7a1f06f1ae28d6db1defddf1c5004de640af0d0642.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/a9607840c6d18561d4f18b7a1f06f1ae28d6db1defddf1c5004de640af0d0642.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":642,"height":427,"image_format":"jpeg","image_sha256":"034443200d21dad75e54a69176647a29635ec1b0f8d47c43e2e39e0486b2d834","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_35_fig_4.jpg","caption":"Fig. 4. Schematic illustration of the $\\mathrm{AlMe}_3$ reaction possibilities on oxide surfaces: ligand exchange with one (a), two (c) and three (c) OH groups; dissociation (d); and association (e) [13,15,21,23-26]. (The methane molecules released in reaction with OH groups are omitted.)","id":"train/atomic-layer-deposition/simulation-usecase/35/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/35/fig_4","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"},{"panel_id":"d","label":"reaction scheme"},{"panel_id":"e","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Ligand exchange with one surface OH group. One methyl is released as methane (not shown), producing a surface-bound AlMe₂ species attached through a single Al–O bond.\"},{\"panel_id\":\"b\",\"text\":\"Ligand exchange with two OH groups. Two methyls are released, yielding an AlMe species bridging two surface oxygen atoms.\"},{\"panel_id\":\"c\",\"text\":\"Ligand exchange with three OH groups. All three methyls are released, leaving aluminum bonded to three surface oxygens with no remaining ligands.\"},{\"panel_id\":\"d\",\"text\":\"Dissociation on an oxygen bridge. AlMe₃ splits across a surface O bridge (no OH required), depositing AlMe₂ bonded to one oxygen and a separate methyl group on an adjacent site.\"},{\"panel_id\":\"e\",\"text\":\"Association with an oxygen bridge. AlMe₃ coordinates to a surface oxygen via a dative bond (dotted line) without dissociating, retaining all three methyl ligands.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Me/Al ratio directly reflects which mechanism dominates. Ligand exchange with one, two, or three OH groups yields Me/Al ratios of 2, 1, and 0 respectively, since each reacting OH releases one methyl as methane. Dissociation produces a Me/Al ratio between 2 and 3 depending on how the methyl fragments distribute. Association preserves all three methyl groups, giving Me/Al = 3. The experimental observation that Me/Al approaches 3 at low OH concentrations supports the occurrence of dissociation and/or association pathways.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The coexistence of multiple pathways explains why the simple model assuming one OH binds one aluminum atom fails quantitatively. The data show that Δc_Al is nonzero even when c_(O)H approaches zero, which is only possible if dissociation or association reactions contribute to growth. Furthermore, the slope b ≈ 0.37 in the Δc_Al versus c_(O)H correlation indicates that roughly three OH groups are needed per additional aluminum atom, consistent with steric crowding by methyl groups limiting the saturation coverage regardless of which specific mechanisms operate.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Dissociation (d) and association (e). In dissociation, AlMe₃ breaks apart across a surface oxygen bridge. In association, AlMe₃ forms a dative bond to a bridging oxygen while retaining all methyl groups.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dotted line represents a dative (coordinate) bond where the oxygen donates electrons to aluminum without covalent bond formation. In panels (a–d), solid lines represent true covalent Al–O bonds formed after ligand exchange or dissociation.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":6,"width":183,"height":280},{"panel_id":"b","x":189,"y":6,"width":140,"height":273},{"panel_id":"c","x":362,"y":52,"width":144,"height":226},{"panel_id":"d","x":501,"y":3,"width":200,"height":278},{"panel_id":"e","x":722,"y":4,"width":166,"height":279}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/Riikka L. Puurunen.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":889,"height":308,"image_format":"jpeg","image_sha256":"45c540b6fefab838e07534b73fe8498685130eb9fa664a5152c26761252e26db","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_43_figure_1.jpg","caption":"Figure 1. Reaction profiles obtained by the ReaxFF-NEB calculations for $\\mathrm{Al}_2\\mathrm{O}_3$ ALD on the $\\mathrm{Ge(100):H}$ surface. Adsorption of (a) TMA and (b) $\\mathrm{H}_2\\mathrm{O}$ at H-terminated Ge surface site. (c) TMA adsorption on a $\\mathrm{Ge - ^*}$ dangling bond site. The insets in each profile are the spatial arrangement of molecule and atomic structures at the corresponding reaction stages.","id":"train/atomic-layer-deposition/simulation-usecase/43/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/43/figure_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The graph represents the energy profile obtained from ReaxFF-NEB calculations for Al₂O₃ ALD on an H-terminated Ge(100) surface, showing the adsorption of trimethylaluminum (TMA). The reaction proceeds via chemisorption of TMA on a Ge–H* site, forming a Ge–Al(CH₃)₂* surface complex with the release of a CH₄ molecule, with an activation barrier of about 1.41 eV and an overall exothermic reaction energy of −1.09 eV. The insets illustrate the atomic configurations at each reaction stage.\"},{\"panel_id\":\"b\",\"text\":\"The graph represents the energy profile obtained from ReaxFF-NEB calculations for the H₂O half-cycle of Al₂O₃ ALD on an H-terminated Ge(100) surface. It shows the reaction of H₂O with a Ge–H* site to form a Ge–OH* surface species and molecular H₂, with an activation energy of approximately 2.32 eV and a final reaction energy of about 1.04 eV. The insets depict the corresponding molecular adsorption and reaction configurations along the reaction pathway.\"},{\"panel_id\":\"c\",\"text\":\"The graph represents the energy profile obtained from ReaxFF-NEB calculations for TMA adsorption on a Ge dangling bond (Ge–) site on the Ge(100) surface. TMA initially adsorbs strongly on the Ge– site, followed by a hydrogen-assisted ligand elimination reaction involving a neighboring Ge–H* site, resulting in the formation of a Ge–Al(CH₃)₂* complex and CH₄, with an overall reaction energy of −1.74 eV. The insets show the atomic arrangements corresponding to each intermediate and transition state.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | Energy (eV) | reaction state |\\n|---|---|---|\\n| | 0.0 | Initial State |\\n| Ge–H* + Al(CH₃)₃ → Ge–Al(CH₃)₂* + CH₄ | 1.41 |Transition state | \\n| Ge–Al(CH₃)₂* → Ge–Al(CH₃)₂* + CH₄ | −1.09 |Final state |\"},{\"panel_id\":\"b\",\"text\":\"| Reaction Step | Energy (eV) |reaction state |\\n|---|---|----- |\\n| - | 0.0 | Initial State |\\n| - | -0.58 | Intermediate State |\\n| Ge–H* + H₂O → Ge–OH* + H₂ | 2.32 |Transition state | \\n| Ge–OH* → Ge–OH* + H₂ | 1.04 |Final state |\"},{\"panel_id\":\"c\",\"text\":\"| Reaction Step | Energy (eV) |reaction state |\\n|---|---|----- |\\n| - | 0.0 | Initial State |\\n| -0.0824 |Ge* + Al(CH₃)₃ → Ge–Al(CH₃)₃* | Intermediate State |\\n| Ge–Al(CH₃)₃* + Ge–H* → Ge–Al(CH₃)₂* + CH₄ + Ge* | −0.824 |Transition state | \\n| - | 0.079 | Intermediate State |\\n| Ge–Al(CH₃)₂* → Ge–Al(CH₃)₂* + CH₄ + Ge* | −1.74 |Final state |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Growth will not occur uniformly; it will be highly selective to defects (dangling bonds). Since the ideal H-terminated surface is unreactive, nucleation will cluster around existing defects where adsorption is spontaneous, leading to island growth and potential pinholes rather than a conformal layer-by-layer deposition.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Spontaneous adsorption of TMA onto the Ge dangling bond (Ge-*).\\n2. Reaction with a neighboring Ge-H* site to eliminate methane (CH₄).\\n\\nThe first step in (c) is spontaneous and exothermic (-0.824 eV) due to the open radical site. In contrast, the initial interaction in (a) faces a significant activation barrier (1.41 eV) because the H-passivated surface lacks active binding sites.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TMA is more likely to react, although both barriers are high. The activation energy for TMA (1.41 eV) is nearly 1 eV lower than for H₂O (2.32 eV), implying that under thermal stress, TMA has a statistically higher probability of overcoming the passivation layer than water.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The H₂O reaction has a higher barrier (~2.32 eV vs. ~1.41 eV), implying it is the slower, rate-limiting half-reaction in the ALD cycle. This higher barrier originates from the stronger O–H bond that must be broken.\"}]}]","bbox":[{"panel_id":"a","x":17,"y":18,"width":649,"height":254},{"panel_id":"b","x":19,"y":297,"width":649,"height":234},{"panel_id":"c","x":16,"y":570,"width":652,"height":234}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/Yuanxia Zheng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":672,"height":806,"image_format":"jpeg","image_sha256":"b238c1272e1f8132058fd54b59f67442c5f56186cdde3f5541d26ccca0a04b0c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_43_figure_2.jpg","caption":"Figure 2. Reaction profiles obtained by the ReaxFF-NEB calculations for: (a) $\\mathrm{H}_2\\mathrm{O}$ hydroxylates one $-\\mathrm{CH}_3$ group on the $\\mathrm{Ge - Al(CH_3)_2^*}$ site, (b) $\\mathrm{H}_2\\mathrm{O}$ hydroxylates $-\\mathrm{CH}_3$ group on the $\\mathrm{Ge - Al(CH_3)(OH)^*}$ site, and (c) TMA adsorption on the $\\mathrm{Ge - Al(OH)_2^*}$ site. The insets in each profile are the spatial arrangement of molecule and atomic structures at the corresponding reaction stages.","id":"train/atomic-layer-deposition/simulation-usecase/43/figure_2","sample_id":"atomic-layer-deposition/simulation-usecase/43/figure_2","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows ReaxFF-NEB energy profiles for sequential surface reactions during Al₂O₃ ALD nucleation on Ge: This energy profile describes the first water exposure during Al₂O₃ ALD nucleation on a Ge surface terminated with Ge–Al(CH₃)₂*. H₂O initially adsorbs exothermically, followed by proton transfer and methyl elimination, forming a Ge–Al(CH₃)(OH)* intermediate with CH₄ release. The reaction proceeds with a low barrier and an overall negative energy change, indicating a thermodynamically favorable hydroxylation of the surface-bound Al species.\"},{\"panel_id\":\"b\",\"text\":\"The second H₂O half-reaction further converts the remaining Al–CH₃ group into an Al–OH group through adsorption and ligand exchange. This step forms a fully hydroxylated Ge–Al(OH)₂* surface species with additional CH₄ formation. The energy profile shows modest activation barriers and an overall exothermic reaction, confirming that complete hydroxylation of the Al center is energetically favorable\"},{\"panel_id\":\"c\",\"text\":\"In the following TMA exposure, Al(CH₃)₃ reacts with the Ge–Al(OH)₂* surface, forming an Al–O–Al bridged dimer via condensation and CH₄ elimination. This step is strongly exothermic, indicating stable Al–O–Al bond formation and effective nucleation of the Al₂O₃ network. The reaction establishes the foundation for continued layer-by-layer Al₂O₃ growth on the Ge substrate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| State | Reaction Step | Energy (eV) |\\n|--------------|------------------------------------------------------------|-------------|\\n| Initial | Ge–Al(CH₃)₂* + H₂O | 0.00 |\\n| Intermediate | Ge–Al(CH₃)₂(H₂O)* | −1.00 |\\n| Transition | Ge–Al(CH₃)₂(H₂O)* → Ge–Al(CH₃)(OH)* + CH₄ | 0.07 |\\n| Intermediate | Ge–Al(CH₃)(OH)* | −1.71 |\"},{\"panel_id\":\"b\",\"text\":\"| State | Reaction Step | Energy (eV) |\\n|--------------|------------------------------------------------------------|-------------|\\n| Initial | Ge–Al(CH₃)(OH)* + H₂O | 0.00 |\\n| Intermediate | Ge–Al(CH₃)(OH)(H₂O)* | −0.80 |\\n| Transition | Ge–Al(CH₃)(OH)(H₂O)* → Ge–Al(OH)₂* + CH₄ | 0.30 |\\n| Final | Ge–Al(OH)₂* | −1.44 |\"},{\"panel_id\":\"c\",\"text\":\"| State | Reaction Step | Energy (eV) |\\n|--------------|--------------------------------------------------------------------------------|-------------|\\n| Initial | Ge–Al(OH)₂* + Al(CH₃)₃ | 0.00 |\\n| Transition | Ge–Al(OH)₂* + Al(CH₃)₃ → Ge–Al(OH)–O–Al(CH₃)₂ + CH₄ | 0.18 |\\n| Final | Ge–Al(OH)–O–Al(CH₃)₂ | −1.22 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The order is (a) → (b) → (c). This pattern of alternating H₂O and TMA reactions defines a complete ALD supercycle for depositing Al₂O₃, where each pair of half-reactions adds a stoichiometric increment of Al₂O₃.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The first H₂O half-cycle (a) has a higher barrier (1.71 eV) and is more limiting than the second (b, 1.44 eV). To speed up cycles, higher temperature targets barrier (a), with the trade-off of risking premature precursor decomposition.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies nucleation is the hardest step, making the first few ALD cycles slow and potentially non-uniform. Precise temperature and precursor control are critical initially to ensure a continuous, pinhole-free gate dielectric.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It forms the first Al–O–Al bridge (Ge–Al(OH)–O–Al(CH₃)₂), creating a cross-linked oxide network. This linkage significantly enhances the film's mechanical and thermal stability compared to isolated, Ge-tethered monomers.\"}]}]","bbox":[{"panel_id":"a","x":20,"y":10,"width":650,"height":249},{"panel_id":"b","x":15,"y":291,"width":653,"height":243},{"panel_id":"c","x":11,"y":560,"width":656,"height":234}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/Yuanxia Zheng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":672,"height":800,"image_format":"jpeg","image_sha256":"2d5aae42184d52e7db24841c62fe4ef7e6c5279a8e9bcdb0d6bc07397cf3fa20","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_44_a63e5b9bd0d4415bbaf27d1b402d5a3f4e7406677e9aaa8efce0059afbbfa476.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/44/a63e5b9bd0d4415bbaf27d1b402d5a3f4e7406677e9aaa8efce0059afbbfa476","sample_id":"atomic-layer-deposition/simulation-usecase/44/a63e5b9bd0d4415bbaf27d1b402d5a3f4e7406677e9aaa8efce0059afbbfa476","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":5,"width":257,"height":116}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/a63e5b9bd0d4415bbaf27d1b402d5a3f4e7406677e9aaa8efce0059afbbfa476.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/images/a63e5b9bd0d4415bbaf27d1b402d5a3f4e7406677e9aaa8efce0059afbbfa476.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/44/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":355,"height":123,"image_format":"jpeg","image_sha256":"56ea9a6b754e857d786597286b6c0a8af88c5e85102df5ef81c0fadc65b69ad7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_52_fig_8.jpg","caption":"Fig. 8 Proposed overall ALD reaction mechanism for W deposition.","id":"train/atomic-layer-deposition/simulation-usecase/52/fig_8","sample_id":"atomic-layer-deposition/simulation-usecase/52/fig_8","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a proposed overall ALD reaction mechanism for tungsten deposition on TiN surfaces. Process 1 illustrates B₂H₆ dissociation on TiN, leading to hydrogen adsorption and subsequent H₂ desorption, resulting in a B-covered surface. Process 2 shows WF₆ dissociation on the B-covered TiN surface, followed by tungsten substitution into boron sites and BF₃ desorption. Process 3 depicts H₂ post-treatment on the W-covered surface, where hydrogen dissociation enables the removal of residual fluorine through HF desorption. Activation energies and reaction energies are annotated to highlight the energetics of each mechanistic step.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The H₂ post-treatment process leading to HF desorption.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Boron modifies the TiN surface by providing reactive sites that facilitate WF₆ dissociation. Tungsten atoms can substitute into boron sites, lowering the energetic cost of incorporation and stabilizing surface-bound tungsten species. This substitution mechanism is central to achieving controlled tungsten deposition.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"- It clarifies the sequence of surface reactions across multiple ALD steps.\\n- It highlights the role of surface modification and post-treatment.\\n- It connects energetic barriers to process feasibility.\\n- It aids in rational optimization of ALD process conditions.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":1,"width":1298,"height":1052}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/52/Hwanyeol Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":1303,"height":1056,"image_format":"jpeg","image_sha256":"c350be1014d3896ee56761dfe46368b43dbc45db3bb46f373a0f2ef34500dd91","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_0ab2f3e4f408574245c6f8a99cf546c1863fda1e7a6c33220e0938239011abaa.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/53/0ab2f3e4f408574245c6f8a99cf546c1863fda1e7a6c33220e0938239011abaa","sample_id":"atomic-layer-deposition/simulation-usecase/53/0ab2f3e4f408574245c6f8a99cf546c1863fda1e7a6c33220e0938239011abaa","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":10,"width":648,"height":267}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/0ab2f3e4f408574245c6f8a99cf546c1863fda1e7a6c33220e0938239011abaa.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/0ab2f3e4f408574245c6f8a99cf546c1863fda1e7a6c33220e0938239011abaa.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":656,"height":280,"image_format":"jpeg","image_sha256":"b39fe0421f6b768da3d671bf7b7e3ba7dc9d77b678d35e126a818d5ee2ba4753","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_4.jpg","caption":"Figure 4. Proposed mechanistic steps for reactive chemisorption of $\\mathrm{SiH}_2\\mathrm{X}_2$ precursor and desorption of functional group X via proton transfer from a $\\mathrm{Si - Y - H}$ functionalized surface $\\mathrm{Y} = \\mathrm{O}$ , $\\mathrm{NH}$ , or $\\mathrm{N}$ . Structure 1 depicts the initial unbound reactants (UR) step; structure 2, the bound reactants (BR); structure 3, the transition state (TS); structure 4, the bound product (BP) step and structure 5, the final unbound products (UP).","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_4","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":2,"width":662,"height":486}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":667,"height":489,"image_format":"jpeg","image_sha256":"0ca9c40bd0c10a65fe9efa5ede48f1f0809bb018190c2f8df105d006df30a968","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_54_figure_1.jpg","caption":"Figure 1. Full cycle of $\\mathrm{SiO}_2$ ALD using $\\mathrm{SiCl}_4$ and $\\mathrm{H}_2\\mathrm{O}$ . Reprinted with permission from ref 18. Copyright 2015 Springer.","id":"train/atomic-layer-deposition/simulation-usecase/54/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/54/figure_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":7,"y":5,"width":1060,"height":486}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/Guoyong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":1075,"height":503,"image_format":"jpeg","image_sha256":"559ebb36d928e32a511b7b1a01a07b08bd170bbe6e8aa936d7a96e32fdd39382","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_54_figure_6.jpg","caption":"Figure 6. $\\mathrm{O}_2$ -based ALD of $\\mathrm{SiO}_2$ with aminosilane. Reprinted with permission from ref 23. Copyright 2012 American Chemical Society.","id":"train/atomic-layer-deposition/simulation-usecase/54/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/54/figure_6","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":4,"width":670,"height":319}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/Guoyong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":675,"height":327,"image_format":"jpeg","image_sha256":"4cceddd62158e5170895c50e1ba329babb6c33b156a3adafe11cd2ee66a14b26","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_54_figure_9.jpg","caption":"Figure 9. RALD of $\\mathrm{Al}_2\\mathrm{O}_3 / \\mathrm{SiO}_2$ nanolaminate. Reprinted with permission from ref 30. Copyright 2013 Royal Society of Chemistry.","id":"train/atomic-layer-deposition/simulation-usecase/54/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/54/figure_9","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":2,"width":655,"height":412}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/Guoyong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":656,"height":416,"image_format":"jpeg","image_sha256":"1b7739b62a391b486bdbd9e5ada260420d2fc8f5628839a7e0f695e191f39f9e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_56_figure_4.jpg","caption":"Figure 4. Optimized initial, transition, and final structures of the partial dissociative chemisorption of BTBAS on a hydroxylated $\\mathrm{Si}(001)$ surface to form a monoamine intermediate. The green balls represent the migrating H atom.","id":"train/atomic-layer-deposition/simulation-usecase/56/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/56/figure_4","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":8,"width":672,"height":159}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/Bo Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":675,"height":169,"image_format":"jpeg","image_sha256":"da4b07215a1a551b4c4f791d12a351c30baefd1f97271ec92e33a01eed7a24b9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_56_figure_6.jpg","caption":"Figure 6. Optimized initial, transition, and final structures of the sequential surface oxidation steps along path a: (a) step 1, (b) step 2.","id":"train/atomic-layer-deposition/simulation-usecase/56/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/56/figure_6","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":15,"y":24,"width":657,"height":165},{"panel_id":"b","x":4,"y":210,"width":668,"height":172}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/56/Bo Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":675,"height":386,"image_format":"jpeg","image_sha256":"48c572aa0afd978f3abc1d68820f66b298b9c33d07bacb5d0fb100a4cc6140ca","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_6_figure_1.jpg","caption":"Figure 1. Schematic of each ALD cycle (Created with BioRender.com).","id":"train/atomic-layer-deposition/simulation-usecase/6/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/6/figure_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a four-step process involving precursor and co-reactant pulses followed by purges on a substrate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Not all active sites are occupied, a reason for this could be steric shielding by ligands of the precursor molecule.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The co-reactant step is self-limiting, the reactants only react with the ligands of the precursor molecules and not with themselves.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An ALD process is the repetition of the four given steps for a discrete number of cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No they do not, if they would that would kill the self-limiting behaviour and parasitic CVD would occur.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":1,"width":1205,"height":277}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/6/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1208,"height":281,"image_format":"jpeg","image_sha256":"d680f5f1662bf16672774b08321c1f56f0bd00d2bd9e06b050ea57aa07041891","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_9_figure_8.jpg","caption":"Figure 8. Example of densification mechanism: multilayer noncrystalline/tree.","id":"train/atomic-layer-deposition/simulation-usecase/9/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/9/figure_8","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows an example of a densification process. On the left, several noncrystalline molecular units are loosely arranged and weakly connected. After densification, shown on the right, these units rearrange and link together to form a more compact, tree-like multilayer structure. The process increases the number of metal–oxygen connections and reduces empty space in the structure. This type of reorganization is typical during densification of amorphous metal–oxide films in ALD.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Metal–oxygen bonding.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Units move closer together\\n, -New metal–oxygen links form\\n, -Loose groups become connected\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Shorter distances between atoms\\n, -More shared oxygen atoms\\n, -Branched, tree-like connections\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Densification improves film strength and stability by reducing weak points in the structure. A denser network has fewer defects and better bonding, which helps improve electrical and mechanical performance. This is important for oxide films used in devices such as dielectrics and protective layers.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":623,"height":351}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/A. Dkhissi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":625,"height":353,"image_format":"jpeg","image_sha256":"6d528bf390b6f4661a2ef20005c035c73992bf628083a62f08d533ed881f5670","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_11_figure_7.jpg","caption":"Figure 7. Schematic of the proposed reaction mechanism for ALE of $\\mathrm{ZnO}$ . During half-reaction A, volatile $\\mathrm{Zn(acac)_2}$ is assumed to form from Hacac and $\\mathrm{ZnO}$ , while leaving residual acac species and other possible carbonaceous fragments. During half-reaction B, an $\\mathrm{O}_2$ plasma combusts the carbonaceous surface species and resets the $\\mathrm{ZnO}$ surface for the next cycle.","id":"train/atomic-layer-etching/experimental-usecase/11/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/11/figure_7","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":8,"y":10,"width":665,"height":414}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plasma.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":675,"height":442,"image_format":"jpeg","image_sha256":"a25f03db962bfa1313d15ce7a49be818d50dded4222fe054ce8921793c089722","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_5a24d10a34dd5e28d6ab429c371bb3dcb7951c6660b1d5b5ea07990118eea01c.jpg","caption":"","id":"train/atomic-layer-etching/experimental-usecase/14/5a24d10a34dd5e28d6ab429c371bb3dcb7951c6660b1d5b5ea07990118eea01c","sample_id":"atomic-layer-etching/experimental-usecase/14/5a24d10a34dd5e28d6ab429c371bb3dcb7951c6660b1d5b5ea07990118eea01c","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":39,"y":7,"width":471,"height":142},{"panel_id":"a","x":39,"y":145,"width":471,"height":125}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/5a24d10a34dd5e28d6ab429c371bb3dcb7951c6660b1d5b5ea07990118eea01c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/5a24d10a34dd5e28d6ab429c371bb3dcb7951c6660b1d5b5ea07990118eea01c.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":511,"height":275,"image_format":"jpeg","image_sha256":"50b4ea544c7f74271ea9f4fca450d2bb85c3b3e0ff5135c172d41474e3beef37","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_6cc4800b80340b5b83ba79735d82f03b51964086ce5164fb3d41a8c84c1f5ecc.jpg","caption":"","id":"train/atomic-layer-etching/experimental-usecase/14/6cc4800b80340b5b83ba79735d82f03b51964086ce5164fb3d41a8c84c1f5ecc","sample_id":"atomic-layer-etching/experimental-usecase/14/6cc4800b80340b5b83ba79735d82f03b51964086ce5164fb3d41a8c84c1f5ecc","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":656,"height":761}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/6cc4800b80340b5b83ba79735d82f03b51964086ce5164fb3d41a8c84c1f5ecc.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/6cc4800b80340b5b83ba79735d82f03b51964086ce5164fb3d41a8c84c1f5ecc.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":656,"height":761,"image_format":"jpeg","image_sha256":"f1c40a4141db70740c9a0e59eda698e164512513cba93d28a39a3c3f1878bc49","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_11.jpg","caption":"Figure 11. Schematic for Si ALE using $\\mathrm{O}_2$ , $\\mathrm{HF}$ , and $\\mathrm{Al(CH_3)_3}$ . $\\mathrm{O}_2$ oxidizes Si to $\\mathrm{SiO}_2$ . $\\mathrm{HF}$ converts the top $\\mathrm{Al}_2\\mathrm{O}_3$ layer to $\\mathrm{AlF}_3$ . $\\mathrm{Al(CH_3)_3}$ removes the $\\mathrm{AlF}_3$ surface layer by a ligand-exchange reaction and then converts $\\mathrm{SiO}_2$ to $\\mathrm{Al}_2\\mathrm{O}_3$ . Reproduced with permission from ref 37. Copyright 2018 American Chemical Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_11","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_11","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"c","x":0,"y":383,"width":668,"height":179},{"panel_id":"b","x":8,"y":176,"width":662,"height":196},{"panel_id":"a","x":3,"y":4,"width":668,"height":174}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":672,"height":564,"image_format":"jpeg","image_sha256":"7a618cb99e6dc05ca07d4b83e8c30c3935c73efbb5177e635828de4fd43842eb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_13.jpg","caption":"Figure 13. Schematic for W ALE using $\\mathrm{O}_2 / \\mathrm{O}_3$ , $\\mathrm{BCl}_3$ , and $\\mathrm{HF}$ . $\\mathrm{O}_2 / \\mathrm{O}_3$ oxidizes W to $\\mathrm{WO}_3$ . $\\mathrm{BCl}_3$ converts $\\mathrm{WO}_3$ to $\\mathrm{B}_2\\mathrm{O}_3$ . $\\mathrm{HF}$ then spontaneously etches $\\mathrm{B}_2\\mathrm{O}_3$ . Reproduced with permission from ref 32. Copyright 2017 American Chemical Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_13","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_13","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"c","x":62,"y":337,"width":595,"height":129},{"panel_id":"b","x":48,"y":166,"width":608,"height":148},{"panel_id":"a","x":53,"y":2,"width":603,"height":159}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":658,"height":469,"image_format":"jpeg","image_sha256":"aec15e2aa9c56f991f7e2afd3521b77ce6dd34ff3bd7628c851eae6cde42652d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_15.jpg","caption":"Figure 15. Schematic of Co ALE with $\\mathrm{Cl}_2$ and hfacH as reactants. $\\mathrm{Cl}_2$ chlorinates the Co surface in Step I. hfacH removes $\\mathrm{Co(hfac)_2Cl_2}$ in Step II. Reproduced with permission from ref 43. Copyright 2019 American Vacuum Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_15","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_15","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":-1,"width":667,"height":163}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":669,"height":164,"image_format":"jpeg","image_sha256":"ecc71297b98768a25a4cd5137610af60511a92fdfcf58b5db055f4225b691c7b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_16.jpg","caption":"Figure 16. Schematic of $\\mathrm{ZnO}$ ALE using acacH and $\\mathrm{O}_2$ plasma as reactants. acacH produces $\\mathrm{Zn(acac)}_2$ and also forms self-limiting acac surface ligands in reaction A. $\\mathrm{O}_2$ plasma removes acac surface ligands in reaction B. Reproduced with permission from ref 47. Copyright 2018 American Chemical Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_16","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_16","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":321,"y":6,"width":349,"height":423},{"panel_id":"a","x":0,"y":0,"width":366,"height":440}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_16.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":670,"height":431,"image_format":"jpeg","image_sha256":"19118fca3381c45e82648c67dc6d0eef36d96a7350abbf1d9bc1c0b5a7e2d0e9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_4.jpg","caption":"Figure 4. Schematic of $\\mathrm{Al}_2\\mathrm{O}_3$ ALE based on fluorination with HF and ligand-exchange with $\\mathrm{Al(CH_3)_3}$ .","id":"train/atomic-layer-etching/experimental-usecase/14/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_4","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":3,"y":228,"width":662,"height":221},{"panel_id":"a","x":0,"y":0,"width":670,"height":246}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":670,"height":447,"image_format":"jpeg","image_sha256":"db0c0838d21488d38457c375eb499e858147306a63cea47b2631e06d0aca8d4e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_8.jpg","caption":"Figure 8. Schematic for $\\mathrm{SiO}_2$ ALE using TMA and HF as reactants. TMA removes $\\mathrm{AlF}_2$ layer by ligand-exchange and then converts surface of underlying $\\mathrm{SiO}_2$ to an $\\mathrm{Al}_2\\mathrm{O}_3$ surface layer. Reproduced with permission from ref 31. Copyright 2017 American Chemical Society. Figure 10. Schematic for TiN ALE using $\\mathrm{O}_3$ and HF as reactants. $\\mathrm{O}_3$ oxidizes TiN to $\\mathrm{TiO}_2$ . HF then spontaneously etches the $\\mathrm{TiO}_2$ surface layer. Reproduced with permission from ref 33. Copyright 2017 American Chemical Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_8","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":355,"y":1,"width":313,"height":441},{"panel_id":"a","x":5,"y":7,"width":345,"height":430}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":672,"height":441,"image_format":"jpeg","image_sha256":"8f9112718f7403f724551e555f70312ce78d55593606704ba499333e0f34c911","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_14_figure_9.jpg","caption":"Figure 9. Schematic for $\\mathrm{WO}_3$ ALE using $\\mathrm{BCl}_3$ and HF as reactants. $\\mathrm{BCl}_3$ converts the surface of $\\mathrm{WO}_3$ to a $\\mathrm{B}_2\\mathrm{O}_3$ surface layer. HF then spontaneously etches the $\\mathrm{B}_2\\mathrm{O}_3$ surface layer. Reproduced with permission from ref 32. Copyright 2017 American Chemical Society.","id":"train/atomic-layer-etching/experimental-usecase/14/figure_9","sample_id":"atomic-layer-etching/experimental-usecase/14/figure_9","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":2,"y":155,"width":669,"height":145},{"panel_id":"a","x":0,"y":2,"width":670,"height":152}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/14/Mechanisms of Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"14","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":672,"height":302,"image_format":"jpeg","image_sha256":"2cd7a22097ea4414e1236fb5101a6e95784041fd09958fd5404b1c64e4158e8d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_c977c5711d13e45cab06a422cd2d459960c00f7c1f1d24a56b371576d108c11d.jpg","caption":"","id":"train/atomic-layer-etching/experimental-usecase/17/c977c5711d13e45cab06a422cd2d459960c00f7c1f1d24a56b371576d108c11d","sample_id":"atomic-layer-etching/experimental-usecase/17/c977c5711d13e45cab06a422cd2d459960c00f7c1f1d24a56b371576d108c11d","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":483,"height":339}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/c977c5711d13e45cab06a422cd2d459960c00f7c1f1d24a56b371576d108c11d.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/c977c5711d13e45cab06a422cd2d459960c00f7c1f1d24a56b371576d108c11d.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":483,"height":339,"image_format":"jpeg","image_sha256":"0f145b42e345f23411988b143e3d8c6a8a8444ea9efea0a6968a19eff303e6b2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_3.jpg","caption":"Figure 3. (A, B) Schematic of the sequential surface reactions during $\\mathrm{Al}_2\\mathrm{O}_3$ ALE using exposures of $\\mathrm{SF}_4$ and $\\mathrm{Sn(acac)}_2$ .","id":"train/atomic-layer-etching/experimental-usecase/17/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_3","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":484}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":675,"height":484,"image_format":"jpeg","image_sha256":"55b6c2d275255b251a2f21bd073bb9e4a5b29023e33251e0f4d9be8b396469fb","metadata_license":"MIT for repository metadata where applicable; 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see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_22717bf8a5bd8f6b666da5b031a8178400767b3930c0e361ea3ee6c43edeead3.jpg","caption":"","id":"train/atomic-layer-etching/experimental-usecase/23/22717bf8a5bd8f6b666da5b031a8178400767b3930c0e361ea3ee6c43edeead3","sample_id":"atomic-layer-etching/experimental-usecase/23/22717bf8a5bd8f6b666da5b031a8178400767b3930c0e361ea3ee6c43edeead3","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":12,"width":428,"height":331}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/22717bf8a5bd8f6b666da5b031a8178400767b3930c0e361ea3ee6c43edeead3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/22717bf8a5bd8f6b666da5b031a8178400767b3930c0e361ea3ee6c43edeead3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":436,"height":344,"image_format":"jpeg","image_sha256":"c9a6972a0fa35b6253c55e256b18ee01118d0e68d3de23e14527131baca89a9d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_1.jpg","caption":"Figure 1. Proposed mechanism of ZnS ALE using HF and TMA as reactants based on (a) fluorination and (b) ligand-exchange reactions.","id":"train/atomic-layer-etching/experimental-usecase/23/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":65,"y":11,"width":605,"height":522}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":672,"height":539,"image_format":"jpeg","image_sha256":"3c487e3562ceb2e0185262ff0d9a5f18118e6893c758c7c981eed3827c236fde","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_23_figure_2.jpg","caption":"Figure 2. Proposed mechanism of $\\mathrm{ZnS}$ ALE using HF and TMA as reactants based on initial conversion followed by (a) fluorination and (b) ligand-exchange and conversion reactions.","id":"train/atomic-layer-etching/experimental-usecase/23/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/23/figure_2","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":23,"y":5,"width":634,"height":652}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/23/Thermal Atomic Layer Etching of Zinc Sulfide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":658,"height":661,"image_format":"jpeg","image_sha256":"85f29901642ce57ef4914d57f9cfb6413ddfcbb024e41fe7b9ca1bb9bedab8b7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_4_fig_1.jpg","caption":"FIG. 1. Atomic layer etching process for TO. Final developed process parameters below each step schematic. In Reaction A, the $\\mathsf{BCl}_3$ pulse modifies the surface. Surface metal atoms are chlorinated and surface oxygen forms boron oxychlorides with the reactant. Purge A is an argon purge that removes excess unreacted $\\mathsf{BCl}_3$ from the chamber. Reaction B is the modified surface removal step. A low ion energy Argon bombardment gives enough energy to volatilize and remove metal chlorides and the surface boron oxychlorides. Purge B removes reaction products with argon. Oxygen in black, argon in red, boron in yellow, chlorine in green, indium in purple, and tin in blue. VESTA 3 was used in drawing the images.","id":"train/atomic-layer-etching/experimental-usecase/4/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/4/fig_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":0,"width":1398,"height":810}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/4/Atomic layer etching of indium tin oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1411,"height":811,"image_format":"jpeg","image_sha256":"94365ba137db0d09c1fa32dddbccb3269004c5fa14a182bc6e06e6fdd3d6ddfc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_42_figure_1.jpg","caption":"Figure 1. Schematic for $\\mathrm{Al}_2\\mathrm{O}_3$ ALE using HF and TMA as the reactants. HF fluorinates $\\mathrm{Al}_2\\mathrm{O}_3$ to form an $\\mathrm{AlF}_3$ layer on the surface. Subsequently, TMA accepts $\\mathrm{F}$ from the $\\mathrm{AlF}_3$ layer and donates a methyl ligand to the $\\mathrm{AlF}_3$ layer to form volatile reaction products such as $\\mathrm{AlF}(\\mathrm{CH}_3)_2$ .","id":"train/atomic-layer-etching/experimental-usecase/42/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/42/figure_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":5,"width":304,"height":395},{"panel_id":"b","x":341,"y":7,"width":330,"height":393}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/42/Selectivity in Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":675,"height":402,"image_format":"jpeg","image_sha256":"167e2f6d28a9695846b23cf60492ba4c6de362bcd4e88f705dced688f528f548","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_45_figure_1.jpg","caption":"Figure 1. Schematic for TiN ALE using $\\mathrm{O}_3$ and HF as the reactants. $\\mathrm{O}_3$ oxidizes the TiN substrate to form a $\\mathrm{TiO}_2$ layer on the surface. Subsequently, HF removes the $\\mathrm{TiO}_2$ layer by forming volatile $\\mathrm{TiF}_4$ and $\\mathrm{H}_2\\mathrm{O}$ reaction products.","id":"train/atomic-layer-etching/experimental-usecase/45/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/45/figure_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The left panel shows the oxidation half-cycle: O₃ reacts with TiN, oxidizing Ti³⁺ to Ti⁴⁺ and forming a self-limiting TiO₂ surface layer. Gaseous O₂, NOₓ, or N₂ are released as byproducts.\"},{\"panel_id\":\"b\",\"text\":\"The right panel shows the fluorination half-cycle: HF reacts with the TiO₂ layer, producing volatile TiF₄ and H₂O that desorb from the surface. The dashed blue line indicates the net etched layer thickness per cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"O₃ is needed because of its stronger oxidizing power. While O₂ can thermodynamically oxidize TiN, the kinetics below 350°C are too slow, and O₂ tends to form intermediate titanium oxynitride (TiOₓNᵧ) rather than pure TiO₂. Only complete conversion to TiO₂ enables efficient removal by HF in the subsequent step.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Conventional thermal ALE fluorinates surfaces to stable, non-volatile metal fluorides, then removes them via ligand-exchange. This fails for TiN because direct fluorination produces non-volatile TiF₃ (Ti³⁺). The new approach first oxidizes TiN to TiO₂ (Ti⁴⁺), allowing HF to produce volatile TiF₄ directly without ligand-exchange.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The dashed blue line marks the \\\"Etched Layer Thickness\\\"—the boundary showing how much TiN material is removed after one complete ALE cycle (oxidation + fluorination).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The O₃/HF chemistry selectively etches TiN while leaving Al₂O₃, HfO₂, ZrO₂, SiO₂, and Si₃N₄ essentially unchanged.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":271,"height":366},{"panel_id":"b","x":287,"y":3,"width":271,"height":363}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/Thermal Atomic Layer Etching of Titanium Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":655,"height":425,"image_format":"jpeg","image_sha256":"02a4b08c17a1c53f75a23aa69414f34815428f03313f9a5f212f7d4b218e114c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_16.jpg","caption":"Figure 16. Schematic diagram describing the proposed etch mechanism for the $\\mathrm{TiO_2}$ ALE process using $\\mathrm{WF}_6$ and $\\mathrm{BCl}_3$ at $170^{\\circ}\\mathrm{C}$ : (1) $\\mathrm{WF}_6$ adsorbs on the thick $\\mathrm{TiO_2}$ surface, forming surface-bound $\\mathrm{TiO_yF_z}$ and $\\mathrm{WO}_x\\mathrm{F}_{y}$ . (2) $\\mathrm{BCl}_3$ volatilizes the surface metal oxy fluoride species, forming $\\mathrm{TiCl}_4$ , $\\mathrm{WCl}_2\\mathrm{O}_2$ , and $\\mathrm{BF}_3$ .","id":"train/atomic-layer-etching/experimental-usecase/46/figure_16","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_16","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":6,"width":840,"height":251}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_16.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":844,"height":258,"image_format":"jpeg","image_sha256":"d707d7cc9172a313e430f00199ff56151a549bb8171d5290e0526f433a6d2385","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_8.jpg","caption":"Figure 8. Schematic of the chemical vapor etching mechanism for $\\mathrm{TiO}_2$ films exposed to $\\mathrm{WF}_6$ at $220^{\\circ}C$ : (1) $\\mathrm{WF}_6$ adsorbs on thick $\\mathrm{TiO}_2$ surface, forming surface-bound $\\mathrm{TiO}_y\\mathrm{F}_z$ and $\\mathrm{WO}_x\\mathrm{F}_y$ ; (2) Additional $\\mathrm{WF}_6$ exposure further fluorinates the $\\mathrm{TiO}_y\\mathrm{F}_z$ and $\\mathrm{WO}_x\\mathrm{F}_y$ creating volatile $\\mathrm{WF}_2\\mathrm{O}_2$ and $\\mathrm{TiF}_4$ , etching the $\\mathrm{TiO}_2$ film.","id":"train/atomic-layer-etching/experimental-usecase/46/figure_8","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_8","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":1,"width":665,"height":225}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":672,"height":230,"image_format":"jpeg","image_sha256":"620aee6fd52d1273833814347eb6c088ce5c58e31a853fdd675e439fa2c4e586","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_8_8a7ee23cdab699d89c4bf82475c30d5325598ae84783549bc0f8d81214595aa8.jpg","caption":"","id":"train/atomic-layer-etching/experimental-usecase/8/8a7ee23cdab699d89c4bf82475c30d5325598ae84783549bc0f8d81214595aa8","sample_id":"atomic-layer-etching/experimental-usecase/8/8a7ee23cdab699d89c4bf82475c30d5325598ae84783549bc0f8d81214595aa8","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"stacked spectra chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":9,"width":341,"height":275},{"panel_id":"b","x":368,"y":46,"width":288,"height":224}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/8a7ee23cdab699d89c4bf82475c30d5325598ae84783549bc0f8d81214595aa8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/8a7ee23cdab699d89c4bf82475c30d5325598ae84783549bc0f8d81214595aa8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/Controlled Layer-by-Layer Etching of MoS2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":655,"height":311,"image_format":"jpeg","image_sha256":"960774466390626ec1f1ff900d96be427c011e4675280c513f9ccd93df69ebd6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_8_figure_1.jpg","caption":"Figure 1. Schematic drawing of $\\mathrm{MoS}_2$ ALET cycle for the layer-by-layer etching.","id":"train/atomic-layer-etching/experimental-usecase/8/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/8/figure_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":5,"width":561,"height":433}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/Controlled Layer-by-Layer Etching of MoS2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":569,"height":439,"image_format":"jpeg","image_sha256":"cb8f51329566ad9bb0ebe0c3e657fe0631598dfa3125eecd938d83be4a3566fb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_13_fig_1.jpg","caption":"FIG. 1. Schematic of the ALET process. The filled circles represent Cl atoms, the open circles represent Si atoms, and $+$ represent $\\mathrm{Ar}^+$ ions.","id":"train/atomic-layer-etching/simulation-usecase/13/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/13/fig_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":3,"width":558,"height":552}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/13/Molecular dynamics simulation of atomic layer etching of silicon.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":566,"height":561,"image_format":"jpeg","image_sha256":"b601c19fa3e17068f61b8cabc05e58083a57129b1292d0843cd07590f4ccf81c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_4.jpg","caption":"Fig. 4. The schematic reaction mechanism of the thermal atomic layer etching cyclical process for $\\mathrm{Al_2O_3}$ where Step A represents the HF fluorination half-cycle and Step B represents the TMA ligand-exchange half-cycle.","id":"train/atomic-layer-etching/simulation-usecase/16/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_4","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a thermal ALE (Atomic Layer Etching) process involving Al2O3. It shows the steps of modifying Al2O3, with HF, and etching with TMA, and repeating these steps.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Al-F\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If the purge is not long enough, remaining water in the reactor can react with TMA resulting in deposition.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The heat is applied to the system by setting a certain temperature as table temperature.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"DMAF.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":13,"width":670,"height":337}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":670,"height":350,"image_format":"jpeg","image_sha256":"5791122ce328c999c1103e1ef5673dae94cdf12d8ccf3ac75e9efbf9af447d69","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_17_fig_1.jpg","caption":"Fig. 1. The thermal ALE cyclical process for $\\mathrm{Al_2O_3}$ . The process begins with Step A, in which HF fluorinates the surface of the substrate and modifies the surface producing $\\mathrm{AlF_3}$ . Following Step A is a purge step to remove $\\mathrm{H}_2\\mathrm{O}$ vapor and residual HF. Next, Step B consists of the etching cycle to convert the modified $\\mathrm{AlF_3}$ layer into the volatile species DMAF using the reagent, TMA. The cycle concludes with another purging step to remove trace TMA and DMAF produced during the etching cycle. The addition of heat allows for complete vaporization of volatile species.","id":"train/atomic-layer-etching/simulation-usecase/17/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/17/fig_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a thermal ALE (Atomic Layer Epitaxy) process involving Al2O3. It shows the steps A flourination and B consisting of ligand exchange, including purge, modify, etch, and heat treatments.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Step | Action | Reactants | Products | Notes |\\n|---------|----------|-----------------|---------------|--------------------------------|\\n| Step A | Modify | HF + Al₂O₃ | AlF₃ + Al₂O₃ | Heat applied; HF reacts with Al₂O₃ surface |\\n| Purge | Purge | DMAF, TMA, N₂ | — | Removes excess reactants and byproducts |\\n| Step B | Etch | TMA + AlF₃ | Al₂O₃ exposed | Heat applied; TMA reacts with AlF₃ |\\n| Purge | Purge | H₂O, HF, N₂ | — | Clears reaction byproducts |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Step B consists of the etching cycle to convert the modified AlF 3 layer into the volatile species DMAF using the reagent, TMA. The cycle concludes with another purging step to remove trace TMA and DMAF produced during the etching cycle. The addition of heat allows for complete vaporization of volatile species.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Step A, HF fluorinates the surface of the substrate \\n2. Purge step to remove H2O vapor and residual HF\\n3. Step B consists of the etching cycle using the reagent, TMA/DMAF. \\n4. Another purging step to remove trace species.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thermal atomic layer etching (ALE) of aluminum oxide is driven by two reaction steps (Step A and Step B) using sequen- tial and self-limiting thermal reactions that are each followed by purge steps. Hydrogen fluoride (HF) and trimethylaluminum [TMA, Al(CH3 )3 ] are involved to remove the Al2O3 surface layer. The overall reaction can be described by Al 2 O 3 (s) + 6HF (g) + 4 Al (CH 3 ) 3 (g) → 6 Al F(CH 3 ) 2 (g) + 3H 2 O (g)\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":1008,"height":512}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/17/Multiscale computational fluid dynamics modeling of thermal atomic layer etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1011,"height":516,"image_format":"jpeg","image_sha256":"46bb4939bb40cd8990401e3e762209c140a118a951d1aab30bc1245843493299","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_1031ad252a919bf5ebb6de059b0cb2450745c4963579f95c04bd7fd326ddfee1.jpg","caption":"","id":"train/atomic-layer-etching/simulation-usecase/20/1031ad252a919bf5ebb6de059b0cb2450745c4963579f95c04bd7fd326ddfee1","sample_id":"atomic-layer-etching/simulation-usecase/20/1031ad252a919bf5ebb6de059b0cb2450745c4963579f95c04bd7fd326ddfee1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":4,"width":559,"height":364}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/1031ad252a919bf5ebb6de059b0cb2450745c4963579f95c04bd7fd326ddfee1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/1031ad252a919bf5ebb6de059b0cb2450745c4963579f95c04bd7fd326ddfee1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":564,"height":370,"image_format":"jpeg","image_sha256":"7b198fee02247a86d79e8ca18d6516ecdaecac099dc4a89f614304d01a1a3263","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_2.jpg","caption":"Figure 2. (a) Relaxed surface slab model of self-limited fluorination of $\\mathrm{TiO}_2(110)$ as $\\mathrm{TiF}_4$ . (b) Relaxed surface slab model of self-limited fluorination of $\\mathrm{TiO}_2(110)$ as $\\mathrm{TiF}_3$ .","id":"train/atomic-layer-etching/simulation-usecase/20/figure_2","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_2","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":23,"y":10,"width":411,"height":320},{"panel_id":"b","x":23,"y":403,"width":411,"height":308}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":434,"height":711,"image_format":"jpeg","image_sha256":"10d28a21ce8d4de217404a795bba52b191cb0c4a2148f34ae72cb1628f5d53aa","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_23_fig_4.jpg","caption":"FIG. 4. Schematic of proposed reaction mechanism for $\\mathrm{Al}_2\\mathrm{O}_3$ ALE showing (a) Sn(acac)2 reaction and (b) HF reaction. Reprinted with permission from Lee and George, ACS Nano 9, 2061 (2015). Copyright 2015, American Chemical Society.","id":"train/atomic-layer-etching/simulation-usecase/23/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/23/fig_4","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":380,"y":7,"width":302,"height":550},{"panel_id":"a","x":7,"y":10,"width":334,"height":541}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/23/Review Paper -- Thermal atomic layer etching A review.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":683,"height":559,"image_format":"jpeg","image_sha256":"7775d39cdcb61ab00f51e817912ef140d61bbd5113bbb66267ed49188f1d32c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_24_fig_2.jpg","caption":"Fig. 2. Proposed reaction mechanism for thermal ALE $\\mathrm{Al_2O_3}$ thin films using HF and TMA as reactants. (a) Schematic of fluorination and ligand-exchange reactions during thermal ALE; (b) Schematic of the four-center ring transition state in the ligand-exchange reaction. Reproduced from Ref. [26].","id":"train/atomic-layer-etching/simulation-usecase/24/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/24/fig_2","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"molecular structure diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":2,"y":357,"width":573,"height":237},{"panel_id":"a","x":5,"y":5,"width":615,"height":347}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/Review Paper -- Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":650,"height":602,"image_format":"jpeg","image_sha256":"b2f591ac1f1a158b422f8ab5090ac6a919294279858908efbf2cffab9be96586","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_24_fig_3.jpg","caption":"Fig. 3. Schematic of proposed reaction mechanism for $\\mathrm{Al}_2\\mathrm{O}_3$ thermal ALE showing (a) $\\mathrm{Sn}(\\mathrm{acac})_2$ reaction and (b) HF reaction. Reproduced from Ref. [16].","id":"train/atomic-layer-etching/simulation-usecase/24/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/24/fig_3","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":670,"y":12,"width":536,"height":859},{"panel_id":"a","x":4,"y":1,"width":671,"height":864}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/Review Paper -- Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1214,"height":923,"image_format":"jpeg","image_sha256":"b19550a256c9c9bcaa20ce62fa4a127d1500146e986cbf17d23e11bbebfdaf25","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_24_fig_6.jpg","caption":"Fig. 6. Schematic of proposed reaction mechanism for TMA/HF thermal ALE $\\mathrm{SiO_2}$ thin films. Reproduced from Ref. [24].","id":"train/atomic-layer-etching/simulation-usecase/24/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/24/fig_6","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":2,"width":648,"height":557}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/Review Paper -- Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":652,"height":564,"image_format":"jpeg","image_sha256":"9eb19bc3676c53d263b65a2597bb29182c5f7dd0ac77c4f4cd5e167fa71232a2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_24_fig_8.jpg","caption":"Fig. 8. Schematic of proposed reaction mechanism for thermal ALE W thin film using using $\\mathrm{O_2 / O_3}$ , $\\mathrm{BCl}_3$ and HF: (a) oxidation of W using $\\mathrm{O_2 / O_3}$ , (b) conversion of $\\mathrm{WO_3}$ to $\\mathrm{B_2O_3}$ using $\\mathrm{BCl}_3$ with volatile $\\mathrm{WO_xCl_y}$ , and (c) fluorination of $\\mathrm{B_2O_3}$ by HF to form volatile $\\mathrm{BF}_3$ and $\\mathrm{H_2O}$ . Reproduced from Ref. 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Schematic for TiN ALE using $\\mathrm{O_3}$ and HF as the reactants. Reproduced from Ref. [20].","id":"train/atomic-layer-etching/simulation-usecase/24/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/24/fig_9","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":342,"y":6,"width":308,"height":421},{"panel_id":"a","x":2,"y":3,"width":322,"height":424}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/24/Review Paper -- Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":650,"height":428,"image_format":"jpeg","image_sha256":"f157df2ecc1e33ad6fb67d88e7f3fff7c62af686f784b558a0c5212f28557e58","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_1.jpg","caption":"Fig. 1. Schematic of the assumed surface reactions during thermal ALE of $\\mathrm{Al_2O_3}$ using HF and TMA as investigated in the present study.","id":"train/atomic-layer-etching/simulation-usecase/29/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":3,"width":596,"height":731}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":605,"height":742,"image_format":"jpeg","image_sha256":"9e9de8200e46a5db6aa68cc72a0d4f16014f373f022f73f4b9bc47569bbdcd8c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_31_561341d49608f303777cbb6ee1889993fb0d47ba4e0aabe261be08f38c08bbe3.jpg","caption":"","id":"train/atomic-layer-etching/simulation-usecase/31/561341d49608f303777cbb6ee1889993fb0d47ba4e0aabe261be08f38c08bbe3","sample_id":"atomic-layer-etching/simulation-usecase/31/561341d49608f303777cbb6ee1889993fb0d47ba4e0aabe261be08f38c08bbe3","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a surface reaction mechanism, likely a half-cycle of Atomic Layer Deposition (ALD) or Etching. It depicts precursor molecules approaching the surface (indicated by downward dashed arrows), reacting with the green and red lattice sites, and the subsequent release of volatile byproducts into the gas phase (indicated by upward dashed arrows).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The species moving downwards are intact precursors containing ligands, while the species moving upwards are smaller byproducts formed by the loss of those ligands during the surface reaction.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure depicts a cyclic surface reaction process. Precursor molecules approach and adsorb onto the surface, as indicated by downward arrows. These adsorbed species participate in surface-mediated reactions, forming new surface-bound intermediates. Reaction products are then released from the surface, shown by upward arrows, completing the adsorption–reaction–desorption cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Adsorption of precursor molecules onto the surface.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":1,"width":662,"height":377}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/561341d49608f303777cbb6ee1889993fb0d47ba4e0aabe261be08f38c08bbe3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/561341d49608f303777cbb6ee1889993fb0d47ba4e0aabe261be08f38c08bbe3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/Thermodynamics of Atomic Layer Etching Chemistry on Copper and Nickel Surfaces from First Principles.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":666,"height":381,"image_format":"jpeg","image_sha256":"40813a39a116149a10594a2b4bed92314c711a7c7f09676d51fb23a0af02f33c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_31_figure_1.jpg","caption":"Figure 1. Plasma-thermal atomic layer etching process depicted here for the Ni/O/formic acid system. The metal surface (A) is first subjected to a plasma ion bombardment (B), forming a surface activation layer until saturation (C). Etchant molecules are then introduced (D) after the plasma has been switched off. The etchants adsorb dissociatively on the activated surface (E), etching the top layers by the formation of volatile metal complexes and water. The reaction stops when all of the modifier atoms are consumed, exposing the metal surface again (F).","id":"train/atomic-layer-etching/simulation-usecase/31/figure_1","sample_id":"atomic-layer-etching/simulation-usecase/31/figure_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"},{"panel_id":"d","label":"reaction scheme"},{"panel_id":"e","label":"reaction scheme"},{"panel_id":"f","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic of the initial clean Ni metal surface prior to plasma exposure.\"},{\"panel_id\":\"b\",\"text\":\"Schematic illustrating plasma ion bombardment of the Ni surface, initiating surface activation.\"},{\"panel_id\":\"c\",\"text\":\"Schematic showing saturation of the activated surface layer following continued plasma exposure.\"},{\"panel_id\":\"d\",\"text\":\"Schematic depicting introduction of etchant molecules after the plasma has been switched off.\"},{\"panel_id\":\"e\",\"text\":\"Schematic of the dissociative adsorption of etchant molecules on the activated surface, forming volatile metal complexes and water.\"},{\"panel_id\":\"f\",\"text\":\"Schematic showing termination of the reaction after consumption of modifier atoms and re-exposure of the Ni metal surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"},{\"panel_id\":\"f\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After the plasma has been switched off.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The underlying Ni metal surface is exposed again, similar to its initial state.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reaction between the adsorbed etchant molecules and the activated surface metal atoms forms complex molecules with high vapor pressure. These volatile complexes can easily desorb from the surface into the gas phase. This desorption effectively removes the top layer of metal atoms, resulting in the controlled etching of the material.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Plasma ion bombardment.\"}]}]","bbox":[{"panel_id":"a","x":8,"y":89,"width":271,"height":120},{"panel_id":"b","x":372,"y":2,"width":269,"height":203},{"panel_id":"c","x":737,"y":82,"width":271,"height":127},{"panel_id":"d","x":8,"y":286,"width":271,"height":172},{"panel_id":"e","x":372,"y":251,"width":254,"height":215},{"panel_id":"f","x":737,"y":264,"width":271,"height":203}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/31/Thermodynamics of Atomic Layer Etching Chemistry on Copper and Nickel Surfaces from First Principles.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"31","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":1008,"height":506,"image_format":"jpeg","image_sha256":"b9bc48ab1b9d458b940cde797b9e618966e83be174d4c87cdb499e930e9bb8de","metadata_license":"MIT for repository metadata where applicable; 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Schematic of the data set construction for NNP training. Initial baseline structures cover diverse equilibrium configurations. Reaction-specific sets are captured via guided MD, while general-purpose sets are derived from high-temperature MD simulations. Iterative refinements of the NNP are conducted using trajectories of NNP-based MD simulations.","id":"train/atomic-layer-etching/simulation-usecase/33/figure_1","sample_id":"atomic-layer-etching/simulation-usecase/33/figure_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":870,"height":658}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":870,"height":658,"image_format":"jpeg","image_sha256":"d88589905a74addf916f0cb84b20ea645aa111a51e7250ed4c09a1b9c54ddbb5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_figure_11.jpg","caption":"Figure 11. Schematic of atomistic mechanism in $\\mathrm{Si}_3\\mathrm{N}_4$ etching (a) at low angle of incidence, and (b) high angle of incidence.","id":"train/atomic-layer-etching/simulation-usecase/33/figure_11","sample_id":"atomic-layer-etching/simulation-usecase/33/figure_11","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":416,"height":423}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":416,"height":423,"image_format":"jpeg","image_sha256":"b72c100b5c9e4c4fc895e57a3c11fc341a78b023ceef854d5d4223950281d3ba","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_5_fig_1.jpg","caption":"Fig. 1 DFT and Tersoff calculated energy change during $\\mathrm{Cl}_g$ adsorption and desorption from $\\mathrm{Ge_9Cl_{12}}$ cluster. Light green: Cl. Cyan: Ge. H(0,2) and H(0,3) marks the number of neighbour atoms $k$ of Cl and Ge type for the surface Ge atom, not including its neighbour atom $j$ . For example, H(0,2) means the surface Ge has zero Cl neighbours if not including the adsorbed Cl atom $j$ , and has 2 other Ge atoms as its neighbours.","id":"train/atomic-layer-etching/simulation-usecase/5/fig_1","sample_id":"atomic-layer-etching/simulation-usecase/5/fig_1","subset":"reaction-scheme","split":"train","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":5,"width":409,"height":326}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/5/Computational modelling of atomic layer etching of chlorinated germanium surfaces by argon.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":417,"height":333,"image_format":"jpeg","image_sha256":"72ec5ed8dc8cbe96957e38f8870ae62f4cd0e12c652d0f8d4bc7671498269661","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/reaction-scheme/validation/metadata.jsonl b/subsets/reaction-scheme/validation/metadata.jsonl index ad6923c439ff695fdeb3852f3f960ad4dfda116e..39a380098a359fe1b04e5331857f76414c1cc497 100644 --- a/subsets/reaction-scheme/validation/metadata.jsonl +++ b/subsets/reaction-scheme/validation/metadata.jsonl @@ -1,18 +1,18 @@ -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_13_fig_11.jpg","caption":"Fig. 11 Schematic overview of the most feasible chemisorption mechanisms for (top) $\\mathrm{MeCpPtMe}_3$ and (bottom) $\\mathrm{Pt(acac)}_2$ on various bare and functionalized graphene surfaces based on the PBE-D3 level calculations.","id":"validation/atomic-layer-deposition/simulation-usecase/13/fig_11","sample_id":"atomic-layer-deposition/simulation-usecase/13/fig_11","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig_11.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/Bora Karasulu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1239,"height":494,"image_format":"jpeg","image_sha256":"090eda1a5c49fb0aa1b8c2d7121e7a02fe66c5d57e713aaf5da75f553973b36a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":2,"width":1226,"height":239},{"panel_id":"b","x":7,"y":245,"width":1229,"height":242}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Top schematic showing the most feasible chemisorption mechanism of MeCpPtMe₃ on graphene surfaces, highlighting strong reactivity and favorable binding on both pristine and functionalized graphene, particularly on graphene oxide. The schematic illustrates the influence of surface groups on the adsorption pathway and the tendency for efficient ALD nucleation.\"},{\"panel_id\":\"b\",\"text\":\"Bottom schematic showing the chemisorption mechanism of Pt(acac)₂ on graphene surfaces, indicating lower reactivity and less favorable binding on pristine and functionalized graphene, including graphene oxide. The schematic highlights how ligand type and surface functionality limit chemisorption and affect ALD film growth.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Description|\\n|-----------|\\n| Schematic overview of the most feasible chemisorption mechanisms for MeCpPtMe₃ on bare and functionalized graphene surfaces, highlighting the dependence on surface groups and ligands. Demonstrates enhanced reactivity of graphene oxide towards MeCpPtMe₃, facilitating uniform ALD nucleation. |\"},{\"panel_id\":\"b\",\"text\":\"|Description|\\n|-----------|\\n| Schematic overview of the most feasible chemisorption mechanisms for Pt(acac)₂ on bare and functionalized graphene surfaces, showing lower reactivity compared to MeCpPtMe₃ and the impact of surface decoration on chemisorption efficiency. |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The mechanism varies depending on whether the surface is bare graphene or functionalized with oxygen-containing groups, as these groups provide different binding sites and reactivity.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"MeCpPtMe3 shows higher reactivity and more favorable chemisorption than Pt(acac)2 on both bare and functionalized graphene surfaces.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding the chemisorption mechanisms allows optimization of ALD conditions for uniform and high-quality Pt deposition. For example, the higher reactivity of MeCpPtMe3 on graphene oxide suggests that mild surface oxidation (e.g., O₂ plasma treatment) can enhance nucleation. This knowledge helps achieve conformal ultrathin Pt films, critical for applications in catalysis, microreactors, and fuel cells.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Presence of oxygenated functional groups (epoxy, hydroxyl, carbonyl), Availability of free sp² carbon sites, Surface planarity or buckling due to functionalization, Distribution of functional groups (single-sided vs. double-sided)\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_24_fig_11.jpg","caption":"Fig. 11. Reaction path and predicted energetics for the reaction of $\\mathrm{ZrCl_4}$ on multiple surface hydroxyl sites using a $\\mathrm{Si(OH)_2 - OH^* - O - }$ $\\mathrm{Si(OH)_2 - OH^*}$ cluster. The green pathway represents the elimination of a second HCl from the adsorbed $\\mathrm{ZrCl_4}$ . The blue and red pathways represent the second ALD half-reaction with water. The purple, gray, red, green, and white atoms denote the zirconium, silicon, oxygen, chlorine and hydrogen atoms, respectively. (For interpretation of the references in colour in this figure legend, the reader is referred to the web version of this article.)","id":"validation/atomic-layer-deposition/simulation-usecase/24/fig_11","sample_id":"atomic-layer-deposition/simulation-usecase/24/fig_11","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_11.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/Joseph H. Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":875,"height":603,"image_format":"jpeg","image_sha256":"f5426b02c0a516be3546ec6f0b9d613a00c5f06c2fbde350c3058af4152e38c9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":869,"height":600}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a reaction pathway involving ZrCl₄(g) reacting with water molecules, showing various transition states (TS) and corresponding energy changes, the figure also shows the molecular structures at the surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | Path 1 ΔE (kcal/mol) |Path 2 ΔE (kcal/mol) |\\n|---|---|---|\\n| Start | 0 |0 |\\n| TS | 30.8 | 30.8 |\\n| TS | 25.8 |25.8 |\\n| TS | 13.3 |13.3 |\\n| TS | 3.5 |3.5 |\\n| TS | 16.8 | 17.9 |\\n| TS | 14.0 |19.5 |\\n| TS | 18.4 |14.0 |\\n| TS | 19.6 |7.6 |\\n| TS | 19.2 |0|\\n| TS | 2.7 |0|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A starting substrate of silicon oxide is used.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The blue pathway, this because the green pathway requires quite some energy that must be delivered in the form of temperature.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The red pathway shows that there is still a single chlorine ligand at the surface. This can be removed with an additional water molecule, so at least two.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"White.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_24_fig_2.jpg","caption":"Fig. 2. Reaction path and predicted energetics for the reaction of gaseous $\\mathrm{ZrCl_4}$ on $\\mathrm{SiO}_2\\mathrm{-OH}^*$ sites. The purple, gray, red, green, and white atoms denote the zirconium, silicon, oxygen, chlorine and hydrogen atoms, respectively. (For interpretation of the references in colour in this figure legend, the reader is referred to the web version of this article.)","id":"validation/atomic-layer-deposition/simulation-usecase/24/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/24/fig_2","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/Joseph H. Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":794,"height":672,"image_format":"jpeg","image_sha256":"8dbe9b63ff76edc3613b94eb8db0c3142cfb4f8a25106c4edd825705834c66f6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":8,"width":783,"height":660}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a reaction pathway involving ZrCl₄(g) and O₃Si-OH*, leading to the formation of O₃Si-O-Zr-Cl* and HCl(g). Energy changes are shown at various points along the reaction coordinate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Coordinate | ΔE (kcal/mol) |\\n|---|---|\\n| ZrCl₄(g) + O₃Si-OH* | 0 |\\n| Complex | -16.9 |\\n| TS | 0 |\\n| O₃Si-O-Zr-Cl* + HCl(g) | -11.9 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This is a viable assumption as there are three more Cl groups that can react with hydroxyl groups on the substrate.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"5 kcal.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, a substrate is usually SiO2 where only the top layer has hydroxyl groups. This does influence the reaction energies.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Water will replace the chlorine with oxygen, resulting in ZrO2.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_24_fig_3.jpg","caption":"Fig. 3. Reaction path and predicted energetics for the reaction of $\\mathrm{H}_2\\mathrm{O}$ on $\\mathrm{SiO}_2\\mathrm{-O - ZrCl}_3^*$ sites. The purple, gray, red, green, and white atoms denote the zirconium, silicon, oxygen, chlorine and hydrogen atoms, respectively. (For interpretation of the references in colour in this figure legend, the reader is referred to the web version of this article.)","id":"validation/atomic-layer-deposition/simulation-usecase/24/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/24/fig_3","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/Joseph H. Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":797,"height":669,"image_format":"jpeg","image_sha256":"d4f4d2b7afa607de89eab1a19f214e2e3d19135bc2037baba42297f3f01a8ddf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":5,"width":791,"height":661}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a chemical reaction pathway involving the transformation of O₃Si-O-Zr-Cl* into O₃Si-O-Zr-OH* through the intermediate TS (transition state) and the release of HCl(g), where the represents the energy change (ΔE) during a chemical reaction, showing the activation energy barrier at 20.3 kcal/mol and the overall energy difference between reactants and products.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔE (kcal/mol) |\\n|---|---|\\n| Start | 0 |\\n| TS | -18|\\n| TS | 5.3|\\n| TS | -0.7|\\n| TS | 0.5|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Water is one of the chemicals. It reacts with the Cl groups at the substrate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The water molecule is connected to the zirconium atom but this is no chemical bond, as the zirconium atom already has 4 bonds. So it must be physisorption.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"20.3 kcal/mol\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is possible that more than one water molecule react with the same zirconium unit. If this happens sequentially, the energies related to it are different as the environment of the reaction is different.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_24_fig_6.jpg","caption":"Fig. 6. Comparison of reaction paths and predicted energetics for the reaction of gaseous $\\mathrm{ZrCl_4}$ on the $\\mathrm{SiO_2 - OH^*}$ sites calculated using (A) $\\mathrm{Si(OH)_3 - OH}$ cluster, (B) $\\mathrm{SiH_3OSi(OH)_2 - OH}$ cluster, and (C) $(\\mathrm{SiH}_3\\mathrm{O})_3\\mathrm{Si - OH}$ cluster, showing cluster size effect on the results. The purple, gray, red, green, and white atoms denote the zirconium, silicon, oxygen, chlorine and hydrogen atoms, respectively. (For interpretation of the references in colour in this figure legend, the reader is referred to the web version of this article.)","id":"validation/atomic-layer-deposition/simulation-usecase/24/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/24/fig_6","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/Joseph H. Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":883,"height":472,"image_format":"jpeg","image_sha256":"aec529b37e8f020983f02b85e2330603692a767c78e1442050569d2e271f8fa0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":8,"width":880,"height":459}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image depicts a reaction scheme illustrating the formation of (SiH₃O)₃Si-OH from ZrCl₄(g) and O₃Si-OH* through a transition state (TS), where the lines show the energy changes (ΔE) for different starting substrates (A, C, B) during a chemical reaction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔE (kcal/mol) A |ΔE (kcal/mol) B |ΔE (kcal/mol) C |\\n|---|---|---|---|\\n| Start | 0 |0 |0 |\\n| Complex | -16|-17|-17|\\n| TS | 0|-0.5|-1|\\n| HCl (g)| -5 |-5.5|-6|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There seems to be little effect, the activation energies are relatively constant.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"16 kcal/mol\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The biggest cluster. This is mainly due to the three backbonds to other SiO clusters.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"These reaction product are removed from the reactor with a turbo pump.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_24_fig_7.jpg","caption":"Fig. 7. Comparison of reaction path and predicted energetics for the reaction of $\\mathrm{H}_2\\mathrm{O}$ on the $\\mathrm{SiO}_2\\mathrm{-O - Zr - Cl}_3^*$ sites calculated using (a) $\\mathrm{Si(OH)_3OZrCl_3}$ cluster, (b) $\\mathrm{SiH_3OSi(OH)_3OZrCl_3}$ cluster, and (c) $\\mathrm{(SiH_3O)_3SiOZrCl_3}$ cluster, showing the cluster effect on the results. The purple, gray, red, green, and white atoms denote the zirconium, silicon, oxygen, chlorine and hydrogen atoms, respectively. (For interpretation of the references in colour in this figure legend, the reader is referred to the web version of this article.)","id":"validation/atomic-layer-deposition/simulation-usecase/24/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/24/fig_7","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/Joseph H. Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":797,"height":700,"image_format":"jpeg","image_sha256":"740836b2e1015a5f9956d1481429ccd7ab6b0dc813d87e7d108b857599327e7b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":792,"height":690}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image depicts a reaction scheme illustrating the transformation of O₃Si-O-Zr-Cl* into O₃Si-O-Zr-OH* through the interaction with H₂O(g), where the line chart shows the change in energy (ΔE) in kcal/mol for the reaction pathway, indicating the activation energy barrier.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔE (kcal/mol) |\\n|---|---|\\n| Start | 0 |\\n| Complex | -17|\\n| TS |4|\\n| HCl (a) | -1|\\n| HCl (g)| 2|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The gases are H2O and HCl, they are not likely to interact as they can not form another molecule.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"20 kcal/mol\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, it is likely that there is enough. However, it does not have to be energetically favoured to do so.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_50_fig_2.jpg","caption":"Fig. 2 Schematic illustration of the reaction mechanism for Si deposition via DCS. (a) DCS in the gas phase, (b) molecularly adsorbed DCS, (c) DCS-amine adduct, (d) decomposed DCS with $\\mathbb{C}\\mathbb{I}^{-}$ and $\\mathsf{H}^{+}$ and (e) $>\\mathsf{SiH}_2$ with $2\\times \\mathbb{C}\\mathbb{I}^{-} / \\mathbb{H}^{+}$ after second $\\mathsf{Si} - \\mathsf{N}$ bond formation.","id":"validation/atomic-layer-deposition/simulation-usecase/50/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/50/fig_2","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"},{"panel_id":"d","label":"reaction scheme"},{"panel_id":"e","label":"reaction scheme"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/Gregory Hartmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":883,"height":456,"image_format":"jpeg","image_sha256":"be3381cb03bef6adbfd32aafc61570596e726740ecdf74e0cbc032876135f143","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":0,"width":272,"height":206},{"panel_id":"b","x":325,"y":9,"width":251,"height":200},{"panel_id":"c","x":598,"y":162,"width":281,"height":219},{"panel_id":"d","x":308,"y":230,"width":268,"height":224},{"panel_id":"e","x":6,"y":271,"width":301,"height":184}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure shows DCS (SiH2Cl2) in the gas phase approaching an amine-terminated surface with NH and NH2 groups.\"},{\"panel_id\":\"b\",\"text\":\"The subfigure shows molecularly adsorbed DCS interacting with surface amine groups, forming an initial adsorption configuration.\"},{\"panel_id\":\"c\",\"text\":\"The subfigure illustrates formation of the DCS–amine adduct, where the Si center is directly bonded to a surface NH2 group.\"},{\"panel_id\":\"d\",\"text\":\"The subfigure shows decomposition of the DCS molecule, producing Cl− and H+ species while the Si fragment remains bound to the surface.\"},{\"panel_id\":\"e\",\"text\":\"The subfigure shows formation of the >SiH2 surface species after a second Si–N bond is formed, accompanied by two Cl−/H+ pairs.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reaction begins with SiH2Cl2 in the gas phase approaching an amine-terminated surface. Surface NH and NH2 groups provide reactive sites that enable subsequent adsorption and chemical interaction with the DCS molecule.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"An NH2 group.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cl− and H+.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_4d29a97a51094e9b24562cfa2dca9544e86f7d8c9fc36d0b2e8078ef0af11b16.jpg","caption":"","id":"validation/atomic-layer-deposition/simulation-usecase/58/4d29a97a51094e9b24562cfa2dca9544e86f7d8c9fc36d0b2e8078ef0af11b16","sample_id":"atomic-layer-deposition/simulation-usecase/58/4d29a97a51094e9b24562cfa2dca9544e86f7d8c9fc36d0b2e8078ef0af11b16","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/4d29a97a51094e9b24562cfa2dca9544e86f7d8c9fc36d0b2e8078ef0af11b16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/4d29a97a51094e9b24562cfa2dca9544e86f7d8c9fc36d0b2e8078ef0af11b16.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":500,"height":381,"image_format":"jpeg","image_sha256":"4640827521dedfd977f122752ac3ecd1cddd282363ea0f08e100c9e3cffdfc6a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":500,"height":381}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_3914f7d4feee490daf175d163cfc1956eedcc7860677c8e0c5ef61030b8ba77a.jpg","caption":"Fig.14Proposed mechanism for ALE of metal oxides using diketone etch-inhibition and surface cleaning. Adsorption of the Hhfac ligands onto the $\\mathsf{Al}_2\\mathsf{O}_3$ surface. Intial binding is in the chelate configuration, where both O atoms bind to the same surface atom, leading to the formation of volatile species. t time steric hndrance on the surface es to the adsorption of more molules in the monodentate and isolated chelate configurations, which enttly init the thh. The hfac spcs on the urce must then be cled away to ret the urce such that more etching can occur in the next ALE cycle. $\\mathsf{H}_2$ plasma is used in this work to remove the surface inhibition layer.","id":"validation/atomic-layer-etching/experimental-usecase/10/3914f7d4feee490daf175d163cfc1956eedcc7860677c8e0c5ef61030b8ba77a","sample_id":"atomic-layer-etching/experimental-usecase/10/3914f7d4feee490daf175d163cfc1956eedcc7860677c8e0c5ef61030b8ba77a","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/3914f7d4feee490daf175d163cfc1956eedcc7860677c8e0c5ef61030b8ba77a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/3914f7d4feee490daf175d163cfc1956eedcc7860677c8e0c5ef61030b8ba77a.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1341,"height":783,"image_format":"jpeg","image_sha256":"deecfeb7c8d8fc3202b612abaf4be50c3fc9e241364e603910972d1a2fb57ff0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":1333,"height":400},{"panel_id":"b","x":218,"y":424,"width":871,"height":358}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig_12.jpg","caption":"Fig. 12 Adsorption pathway for Hhfac on a hydroxylated $\\mathsf{Al}_2\\mathsf{O}_3$ surface. (a) Hhfac molecule initially physisorbs to the surface. (b) Donation of H from Hhfac to the surface, forming $\\mathsf{H}_2\\mathsf{O}$ on the surface. (c) The hfac ligand bound in monodentate configuration, with the $\\mathsf{H}_2\\mathsf{O}$ still bound to the surface. (d) Chelate configuration of the hfac ligand, with both O atoms bound to the same surface Al atom. Adsorption energies for each configuration are shown beneath the images. The arrows indicate potential transitions on the surface and the difference in energy between two configurations.","id":"validation/atomic-layer-etching/experimental-usecase/10/fig_12","sample_id":"atomic-layer-etching/experimental-usecase/10/fig_12","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_12.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1117,"height":541,"image_format":"jpeg","image_sha256":"2c3e2dcbef4101e4a22b7b22504b870d6d0e2e5c0f1625b84a61bd6ea665d20d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1117,"height":541}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig_8.jpg","caption":"Fig. 8 (a) Schematic of the performed experiment to determine whether there is any build-up of Hhfac residue on the $\\mathrm{Al}_2\\mathrm{O}_3$ surface post ALE. FTIR spectra are referenced to the spectrum for the as-deposited $\\mathrm{Al}_2\\mathrm{O}_3$ planar film. (b) Spectra taking in reflection mode after full ALE cycles. A cyclic decrease in absorbance for the Al-O bond region is observed. For the rest, the spectrum shows minimal change over the 5 ALE cycles.","id":"validation/atomic-layer-etching/experimental-usecase/10/fig_8","sample_id":"atomic-layer-etching/experimental-usecase/10/fig_8","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":655,"height":556,"image_format":"jpeg","image_sha256":"dde029b84f1bf0164134c0262afd6a0449ac531c9cd6ca64a9617bbc4db7cb39","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":24,"y":3,"width":627,"height":176},{"panel_id":"b","x":2,"y":180,"width":629,"height":377}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_19_fig_2.jpg","caption":"Fig. 2. Proposed reaction mechanism for thermal ALE $\\mathrm{Al_2O_3}$ thin films using HF and TMA as reactants. (a) Schematic of fluorination and ligand-exchange reactions during thermal ALE; (b) Schematic of the four-center ring transition state in the ligand-exchange reaction. Reproduced from Ref. [26].","id":"validation/atomic-layer-etching/experimental-usecase/19/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/19/fig_2","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":650,"height":602,"image_format":"jpeg","image_sha256":"b2f591ac1f1a158b422f8ab5090ac6a919294279858908efbf2cffab9be96586","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":5,"width":646,"height":352},{"panel_id":"b","x":1,"y":352,"width":645,"height":248}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This subfigure illustrates the two half reactions in TMA/HF thermal ALE of Al₂O₃. The top row shows the fluorination step where HF converts the Al₂O₃ surface to an AlF₃ passivation layer, releasing H₂O. The bottom row shows the ligand exchange step where TMA (Al(CH₃)₃) reacts with AlF₃, producing volatile AlF(CH₃)₂ and removing material (etched layer thickness Δ).\"},{\"panel_id\":\"b\",\"text\":\"This subfigure depicts the four center ring transition state during the ligand exchange reaction. It shows how aluminum from TMA and aluminum from the AlF₃ surface form a bridged intermediate through F and CH₃ ligands (green dashed bonds), enabling the exchange that produces volatile AlF(CH₃)₂.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Fluorination releases H₂O; ligand exchange releases AlF(CH₃)₂.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Δ indicates the etched layer thickness, representing the amount of Al₂O₃ material removed after one complete ALE cycle.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The four center ring transition state enables ligand exchange by forming transient bridges between aluminum centers from TMA and the AlF₃ surface. Fluorine and methyl groups simultaneously bridge both aluminum atoms (green dashed bonds), facilitating the transfer of CH₃ ligands to surface aluminum and F ligands to the TMA aluminum. This produces volatile AlF(CH₃)₂ that removes aluminum from the film.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Fluorine's ability to form bimetallic bridges between adjacent metal centers facilitates the transition state geometry required for ligand exchange.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_19_fig_3.jpg","caption":"Fig. 3. Schematic of proposed reaction mechanism for $\\mathrm{Al}_2\\mathrm{O}_3$ thermal ALE showing (a) $\\mathrm{Sn}(\\mathrm{acac})_2$ reaction and (b) HF reaction. Reproduced from Ref. [16].","id":"validation/atomic-layer-etching/experimental-usecase/19/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/19/fig_3","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1214,"height":923,"image_format":"jpeg","image_sha256":"b19550a256c9c9bcaa20ce62fa4a127d1500146e986cbf17d23e11bbebfdaf25","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":2,"width":671,"height":914},{"panel_id":"b","x":663,"y":8,"width":548,"height":909}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This subfigure illustrates the ligand-exchange half-reaction in thermal ALE of Al₂O₃. Sn(acac)₂ (blue) reacts with an AlF₃-terminated surface (top, red-dashed Al–F bonds), exchanging acetylacetonate ligands for fluorine. This produces volatile Al(acac)₃ that removes aluminum from the film, and SnF(acac) byproduct, leaving an exposed Al₂O₃ surface (bottom).\"},{\"panel_id\":\"b\",\"text\":\"This subfigure depicts the fluorination half-reaction. HF reacts with the Al₂O₃ surface bearing SnF(acac) species (top), regenerating the AlF₃ passivation layer (bottom, red-dashed Al–F bonds) while releasing volatile SnF(acac) and H₂O. This prepares the surface for the next ligand-exchange cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The volatility ensures complete removal of aluminum-containing products from the surface, preventing redeposition and allowing etching to stop once the AlF₃ layer is consumed.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The blue structures represent tin-containing species: Sn(acac)₂ precursor molecules (incoming reactant in subfigure a) and SnF(acac) byproduct species (formed during ligand exchange and released during both half-reactions).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The first half-reaction is ligand-exchange, where Sn(acac)₂ reacts with the AlF₃ surface layer, transferring acac ligands to aluminum and forming volatile Al(acac)₃ that removes aluminum from the film. The second half-reaction is fluorination, where HF converts the exposed Al₂O₃ back to AlF₃ while releasing H₂O. This cyclic process enables controlled atomic-scale etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The surface changes from Al–O bonds with adsorbed SnF(acac) species (top) to an AlF₃ layer with Al–F bonds (bottom) after HF exposure.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_19_fig_6.jpg","caption":"Fig. 6. Schematic of proposed reaction mechanism for TMA/HF thermal ALE $\\mathrm{SiO_2}$ thin films. Reproduced from Ref. [24].","id":"validation/atomic-layer-etching/experimental-usecase/19/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/19/fig_6","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":652,"height":564,"image_format":"jpeg","image_sha256":"9eb19bc3676c53d263b65a2597bb29182c5f7dd0ac77c4f4cd5e167fa71232a2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":652,"height":564}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure illustrates the conversion-fluorination mechanism for thermal ALE of SiO₂. Starting from an AlF₃/Silicate surface (left), TMA exposure converts SiO₂ to Al₂O₃/Silicate while releasing volatile AlFₓ(CH₃)₃₋ₓ and SiFₓ(CH₃)₄₋ₓ products, leaving a CH₃ terminated surface (right). HF exposure then fluorinates the Al₂O₃/Silicate intermediate back to AlF₃/Silicate, releasing H₂O and CH₄. The cyclic process achieves net SiO₂ removal (dotted line indicates etched thickness).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Standard fluorination and ligand exchange fails for SiO₂ because the Si-F bond is too strong to undergo effective ligand exchange to generate volatile Si-containing products. In conversion-fluorination, TMA converts SiO₂ to Al₂O₃ (thermodynamically favorable with ΔG = −235 kcal/mol at 300°C), which can then be fluorinated and removed via the standard ligand exchange pathway.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"TMA step releases AlFₓ(CH₃)₃₋ₓ and SiFₓ(CH₃)₄₋ₓ; HF step releases H₂O and CH₄.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The red layer represents AlF₃/Silicate (after HF fluorination), while the blue layer represents Al₂O₃/Silicate (after TMA conversion).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch rate increases with TMA pressure: 0.027 Å/cycle at 0.1 Torr up to 0.31 Å/cycle at 4.0 Torr, indicating a pressure dependent reaction mechanism.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_19_fig_7.jpg","caption":"Fig. 7. Schematic of proposed reaction mechanism for HF/TMA thermal ALE ZnO thin film. Reproduced from Ref. [33].","id":"validation/atomic-layer-etching/experimental-usecase/19/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/19/fig_7","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":900,"height":520,"image_format":"jpeg","image_sha256":"af55b477cc87012d1674837f8e4fec3acbe90518f908ced29ecbf67826407376","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":7,"width":893,"height":254},{"panel_id":"b","x":3,"y":268,"width":893,"height":253}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Shows the fluorination step where HF converts the surface Al₂O₃ layer (cyan) to an AlF₃ passivation layer (yellow) on top of remaining Al₂O₃, with the ZnO substrate below.\"},{\"panel_id\":\"b\",\"text\":\"Shows the TMA ligand exchange and conversion step. TMA removes the AlF₃ layer via ligand exchange and simultaneously converts underlying ZnO to Al₂O₃, resulting in a thinner ZnO layer. This is visible by comparing the ZnO thickness before and after.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ZnO has a much higher EPC of 2.11 Å/cycle at 265°C compared to Al₂O₃, SiO₂, HfO₂, and ZrO₂ which typically show EPC values below 1 Å/cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Yellow represents AlF₃; cyan represents Al₂O₃; gray/white represents ZnO substrate.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA converts ZnO to Al₂O₃ while releasing volatile Zn(CH₃)₂, with ΔG = −166.8 kcal/mol at 265°C making the reaction thermodynamically favorable.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The surface becomes smoother, with RMS roughness decreasing from 11 Å to 5.8 Å after etching.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_19_fig_8.jpg","caption":"Fig. 8. Schematic of proposed reaction mechanism for thermal ALE W thin film using using $\\mathrm{O_2 / O_3}$ , $\\mathrm{BCl}_3$ and HF: (a) oxidation of W using $\\mathrm{O_2 / O_3}$ , (b) conversion of $\\mathrm{WO_3}$ to $\\mathrm{B_2O_3}$ using $\\mathrm{BCl}_3$ with volatile $\\mathrm{WO_xCl_y}$ , and (c) fluorination of $\\mathrm{B_2O_3}$ by HF to form volatile $\\mathrm{BF}_3$ and $\\mathrm{H_2O}$ . Reproduced from Ref. [25].","id":"validation/atomic-layer-etching/experimental-usecase/19/fig_8","sample_id":"atomic-layer-etching/experimental-usecase/19/fig_8","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":912,"height":642,"image_format":"jpeg","image_sha256":"7b6bd9799cc4d5515ebff99083dcfbe59af2885b674e1fc372d87473ca0e91ef","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":5,"width":906,"height":202},{"panel_id":"b","x":4,"y":220,"width":903,"height":210},{"panel_id":"c","x":6,"y":444,"width":899,"height":196}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Shows the oxidation step where O₂/O₃ oxidizes the tungsten metal surface to grow the WO₃ layer (cyan to yellow transformation at the W/WO₃ interface).\"},{\"panel_id\":\"b\",\"text\":\"Shows the conversion step where BCl₃ converts surface WO₃ to B₂O₃ (red layer) while releasing volatile WOₓClᵧ. The B₂O₃ layer acts as a self-limiting passivation.\"},{\"panel_id\":\"c\",\"text\":\"Shows the fluorination step where HF removes the B₂O₃ layer as volatile BF₃ and H₂O. The underlying WO₃ acts as an etch stop. Net etched thickness is indicated.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Yellow represents metallic W; cyan/blue represents WO₃; red/pink represents B₂O₃.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The EPC for W is approximately 2.5 Å/cycle at 207°C.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Metallic W cannot be directly etched by fluorination or conversion reactions. The oxidation step (A) first converts W to WO₃, which then enables the conversion step (B) where BCl₃ transforms WO₃ to B₂O₃. Finally, the fluorination step (C) removes B₂O₃ with HF. This three step sequence is necessary because W itself does not react with BCl₃ or HF.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The standard free energy change (ΔG°) for the reaction between HF and WO₃ is positive, making fluorination of WO₃ thermodynamically unfavorable, so WO₃ acts as an etch stop.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_c466ef032e36d8a6b1b99692843b6c50f4f3f7ca51d12676e6844eb1f694e786.jpg","caption":"","id":"validation/atomic-layer-etching/experimental-usecase/24/c466ef032e36d8a6b1b99692843b6c50f4f3f7ca51d12676e6844eb1f694e786","sample_id":"atomic-layer-etching/experimental-usecase/24/c466ef032e36d8a6b1b99692843b6c50f4f3f7ca51d12676e6844eb1f694e786","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/c466ef032e36d8a6b1b99692843b6c50f4f3f7ca51d12676e6844eb1f694e786.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/c466ef032e36d8a6b1b99692843b6c50f4f3f7ca51d12676e6844eb1f694e786.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":669,"height":322,"image_format":"jpeg","image_sha256":"84ba381a61444fc51439e8c42c838c55ed85b53d04f2675726617c15f5b8c7ec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":7,"width":664,"height":135},{"panel_id":"b","x":19,"y":163,"width":649,"height":157}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"HF Fluorination Reaction: The top row illustrates step (A) of the Al₂O₃ ALE mechanism. HF reacts with AlCH₃* surface species (remaining from the previous TMA exposure) to form AlF* surface species while releasing CH₄. Simultaneously, HF fluorinates the underlying Al₂O₃ substrate to form an AlF₃ surface layer, with H₂O as a volatile byproduct.\"},{\"panel_id\":\"b\",\"text\":\"TMA Ligand-Exchange Reaction: The bottom row depicts step (B), where trimethylaluminum (TMA) undergoes a ligand-exchange transmetalation reaction with the AlF₃ surface layer. TMA accepts fluorine atoms from AlF₃ while donating methyl groups, producing volatile AlF(CH₃)₂ that desorbs from the surface. This removal of aluminum-containing species enables the net etching of Al₂O₃. The surface is left with AlCH₃* species, ready for the next HF exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA (Al(CH3)3)\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Al2O3 atomic layer etching\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows a lot of dashed lines, this means there are no covalent bonds between the AlF3 groups.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Since during the second step new aluminum is added to the surface whilst the oxygen is fully removed in the first step, the process is more effective in removing oxygen.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"- Left side: fluorinated surface (dominant Al–F termination).\\n- Right side: methyl-terminated surface (dominant Al–CH3 termination).\\n- The step represents replacement of surface F sites by CH3-containing termination.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes. It regenerates a defined –CH₃-terminated surface needed for the next HF exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA transfers methyl (CH₃) ligands to produce volatile AlF(CH₃)₂ products, whereas Sn(acac)₂ transfers acetylacetonate (acac) ligands to produce Al(acac)₃ as the volatile etch product.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TMA is effective because: (1) aluminum has only three valence electrons and an open outer shell, making it a strong Lewis acid; (2) aluminum has a low electronegativity (1.5), which thermodynamically favors fluorine transfer to aluminum during transmetalation; (3) aluminum forms strong Al–F bonds; and (4) TMA has high volatility and excellent reactivity.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. When TMA is paired with H₂O, it performs Al₂O₃ atomic layer deposition (ALD); when paired with HF, it enables Al₂O₃ atomic layer etching (ALE).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The reaction begins with a chemical reaction between Al2O3 film and HF to form fluorinated Al2O3 films, with H2O and CH4, as by-products.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, the first step produces H2O and CH4, while the second one produces AlF(CH3)2\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, it seems that the Al2O3 film is not affected by the HF indicating that the HF has a limited penetration depth leading to a saturating process.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reaction of the surface with HF removes a significant amount of atoms from the surface whilst only adding limited F-atoms. This indicates that the thickness slightly decreases.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"HF reacts with surface –CH3 ligands on Al sites, removing methyl termination and forming volatile byproducts (CH4 and H2O) as indicated. As these ligands are eliminated, the surface becomes fluorinated with Al–F bonds. Overall, the panel illustrates conversion from a methylated Al2O3 surface to a fluorinated Al2O3 surface during the HF exposure step.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"H2O and CH4.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The AlF₃ surface layer serves as the critical intermediate that enables the ligand-exchange transmetalation reaction with TMA. During the HF exposure, the Al₂O₃ surface is converted to an approximately 3.0 Å thick AlF₃ layer through the spontaneous fluorination reaction Al₂O₃ + 6HF → 2AlF₃ + 3H₂O. This AlF₃ layer then reacts with incoming TMA molecules: aluminum in TMA accepts fluorine from AlF₃ while donating methyl groups, forming volatile AlF(CH₃)₂ products that desorb from the surface. Without this intermediate fluoride layer, the ligand-exchange mechanism that produces volatile etch products would not occur, and no material removal would take place.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_13.jpg","caption":"Figure 13. Schematic of proposed reaction mechanism for $\\mathrm{Al}_2\\mathrm{O}_3$ ALE showing (A) HF reaction and (B) TMA reaction.","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_13","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_13","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_13.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":672,"height":486,"image_format":"jpeg","image_sha256":"6ae2eb5354a80b890715cdbd25f30963262604dbb8c52ed85d485ab4c3d4df9e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":7,"width":346,"height":421},{"panel_id":"b","x":360,"y":6,"width":311,"height":431}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"HF Fluorination Reaction: The left panel illustrates the first half-reaction of the Al₂O₃ ALE cycle. The surface initially has AlCH₃* species (shown as Al(CH₃)₂ groups, blue) remaining from the previous TMA exposure, bonded to the Al₂O₃ substrate through oxygen bridges. Upon HF exposure, these methyl groups are replaced by fluorine atoms, releasing CH₄ as a volatile product. Simultaneously, the underlying Al₂O₃ is fluorinated to form an AlF₃ surface layer (red fluorine atoms), with H₂O released as a byproduct. The reaction Al₂O₃ + 6HF → 2AlF₃ + 3H₂O is thermodynamically spontaneous.\"},{\"panel_id\":\"b\",\"text\":\"TMA Ligand-Exchange Reaction: The right panel shows the second half-reaction. TMA (Al(CH₃)₃) reacts with the AlF₃ surface layer through a ligand-exchange transmetalation mechanism. Aluminum in TMA accepts fluorine from the surface AlF₃ while donating methyl groups, producing volatile AlF(CH₃)₂ that desorbs (shown with arrow indicating H₃C-Al(F)-CH₃ leaving). The surface is left with AlCH₃* species bonded to the remaining Al₂O₃ film, ready for the next HF exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Atomic layer etching of Al2O3 films with TMA as a precursor.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The top layer of the film will have a lot of carbon impurities. Fluorine can potentially penetrate the film deeper, leading to fluorine impurities.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As dielectric material in semiconductor electronics.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ligand-exchange reaction produces volatile AlF(CH₃)₂ because this mixed alkyl-fluoride aluminum compound has favorable properties for desorption. AlF(CH₃)₂ has a vapor pressure of approximately 80 Torr at 100°C, making it highly volatile at the 300°C reaction temperature. The transmetalation mechanism involves a four-center ring transition state where fluorine bridges between the surface aluminum and the aluminum in TMA. During this exchange, TMA accepts fluorine atoms from the AlF₃ layer while donating methyl groups, resulting in a stable molecular species that readily desorbs from the surface, carrying aluminum away and enabling net etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA reacts with the AlF₃ surface layer to form volatile AlF(CH₃)₂ products and can remove AlF₂(CH₃)* species, while HF reacts with AlCH₃* species and Al₂O₃ to form AlF* and AlF₃, respectively.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"AlCH₃, AlF, AlF₂(CH₃), AlF₃, Al(CH₃)₃\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The schematic shows that the sequential HF and TMA reactions are self-limiting: HF selectively reacts with AlCH₃* and Al₂O₃ to form AlF* and AlF₃, while TMA reacts with the AlF₃ surface to produce volatile AlF(CH₃)₂ and remove intermediate species. This controlled sequence ensures that only a defined amount of Al₂O₃ is etched per cycle, demonstrating the effectiveness of ALE in achieving precise, layer-by-layer material removal.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first reaction between AL2O3 film and HF to form fluorinated Al2O3 films, with H2O and CH4, as by-products.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The reaction products are water (H2O) and methane (CH4).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Water reacts with the methyl groups creating aluminum oxide in the first half cycle. In the second half cycle, water can potentially react with the AlF(CH3)2, leading to the deposition of aluminum oxide, thereby reducing the etch rate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Al₂O₃ + 4Al(CH₃)₃ + 6HF → 6AlF(CH₃)₂ + 3H₂O\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the HF fluorination reaction (A): H₂O and CH₄. During the TMA ligand-exchange reaction (B): AlF(CH₃)₂.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The self-limiting behavior arises from the complementary surface terminations after each half-reaction. After the HF exposure, the surface is terminated with an AlF₃ layer that passivates the underlying Al₂O₃, preventing further fluorination—similar to how native oxide layers protect metals. This AlF₃ layer has a Pilling-Bedworth ratio greater than 1 (approximately 1.8), indicating complete surface coverage. After the TMA exposure, the AlF₃ is converted to AlCH₃* surface species, which are unreactive toward additional TMA. Each half-reaction therefore proceeds only until the available reactive sites are consumed, after which excess reactant exposure produces no additional change. This ensures atomic-level control over the etch depth.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_13_fig_11.jpg","caption":"Fig. 11 Schematic overview of the most feasible chemisorption mechanisms for (top) $\\mathrm{MeCpPtMe}_3$ and (bottom) $\\mathrm{Pt(acac)}_2$ on various bare and functionalized graphene surfaces based on the PBE-D3 level calculations.","id":"validation/atomic-layer-deposition/simulation-usecase/13/fig_11","sample_id":"atomic-layer-deposition/simulation-usecase/13/fig_11","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Top schematic showing the most feasible chemisorption mechanism of MeCpPtMe₃ on graphene surfaces, highlighting strong reactivity and favorable binding on both pristine and functionalized graphene, particularly on graphene oxide. The schematic illustrates the influence of surface groups on the adsorption pathway and the tendency for efficient ALD nucleation.\"},{\"panel_id\":\"b\",\"text\":\"Bottom schematic showing the chemisorption mechanism of Pt(acac)₂ on graphene surfaces, indicating lower reactivity and less favorable binding on pristine and functionalized graphene, including graphene oxide. The schematic highlights how ligand type and surface functionality limit chemisorption and affect ALD film growth.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Description|\\n|-----------|\\n| Schematic overview of the most feasible chemisorption mechanisms for MeCpPtMe₃ on bare and functionalized graphene surfaces, highlighting the dependence on surface groups and ligands. Demonstrates enhanced reactivity of graphene oxide towards MeCpPtMe₃, facilitating uniform ALD nucleation. |\"},{\"panel_id\":\"b\",\"text\":\"|Description|\\n|-----------|\\n| Schematic overview of the most feasible chemisorption mechanisms for Pt(acac)₂ on bare and functionalized graphene surfaces, showing lower reactivity compared to MeCpPtMe₃ and the impact of surface decoration on chemisorption efficiency. |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The mechanism varies depending on whether the surface is bare graphene or functionalized with oxygen-containing groups, as these groups provide different binding sites and reactivity.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"MeCpPtMe3 shows higher reactivity and more favorable chemisorption than Pt(acac)2 on both bare and functionalized graphene surfaces.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding the chemisorption mechanisms allows optimization of ALD conditions for uniform and high-quality Pt deposition. For example, the higher reactivity of MeCpPtMe3 on graphene oxide suggests that mild surface oxidation (e.g., O₂ plasma treatment) can enhance nucleation. This knowledge helps achieve conformal ultrathin Pt films, critical for applications in catalysis, microreactors, and fuel cells.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Presence of oxygenated functional groups (epoxy, hydroxyl, carbonyl), Availability of free sp² carbon sites, Surface planarity or buckling due to functionalization, Distribution of functional groups (single-sided vs. double-sided)\"}]}]","bbox":[{"panel_id":"a","x":7,"y":2,"width":1226,"height":239},{"panel_id":"b","x":7,"y":245,"width":1229,"height":242}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/images/fig_11.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/13/Bora Karasulu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1239,"height":494,"image_format":"jpeg","image_sha256":"090eda1a5c49fb0aa1b8c2d7121e7a02fe66c5d57e713aaf5da75f553973b36a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_24_fig_11.jpg","caption":"Fig. 11. Reaction path and predicted energetics for the reaction of $\\mathrm{ZrCl_4}$ on multiple surface hydroxyl sites using a $\\mathrm{Si(OH)_2 - OH^* - O - }$ $\\mathrm{Si(OH)_2 - OH^*}$ cluster. The green pathway represents the elimination of a second HCl from the adsorbed $\\mathrm{ZrCl_4}$ . The blue and red pathways represent the second ALD half-reaction with water. The purple, gray, red, green, and white atoms denote the zirconium, silicon, oxygen, chlorine and hydrogen atoms, respectively. (For interpretation of the references in colour in this figure legend, the reader is referred to the web version of this article.)","id":"validation/atomic-layer-deposition/simulation-usecase/24/fig_11","sample_id":"atomic-layer-deposition/simulation-usecase/24/fig_11","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a reaction pathway involving ZrCl₄(g) reacting with water molecules, showing various transition states (TS) and corresponding energy changes, the figure also shows the molecular structures at the surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | Path 1 ΔE (kcal/mol) |Path 2 ΔE (kcal/mol) |\\n|---|---|---|\\n| Start | 0 |0 |\\n| TS | 30.8 | 30.8 |\\n| TS | 25.8 |25.8 |\\n| TS | 13.3 |13.3 |\\n| TS | 3.5 |3.5 |\\n| TS | 16.8 | 17.9 |\\n| TS | 14.0 |19.5 |\\n| TS | 18.4 |14.0 |\\n| TS | 19.6 |7.6 |\\n| TS | 19.2 |0|\\n| TS | 2.7 |0|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A starting substrate of silicon oxide is used.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The blue pathway, this because the green pathway requires quite some energy that must be delivered in the form of temperature.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The red pathway shows that there is still a single chlorine ligand at the surface. This can be removed with an additional water molecule, so at least two.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"White.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":869,"height":600}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_11.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/Joseph H. Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":875,"height":603,"image_format":"jpeg","image_sha256":"f5426b02c0a516be3546ec6f0b9d613a00c5f06c2fbde350c3058af4152e38c9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_24_fig_2.jpg","caption":"Fig. 2. Reaction path and predicted energetics for the reaction of gaseous $\\mathrm{ZrCl_4}$ on $\\mathrm{SiO}_2\\mathrm{-OH}^*$ sites. The purple, gray, red, green, and white atoms denote the zirconium, silicon, oxygen, chlorine and hydrogen atoms, respectively. (For interpretation of the references in colour in this figure legend, the reader is referred to the web version of this article.)","id":"validation/atomic-layer-deposition/simulation-usecase/24/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/24/fig_2","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a reaction pathway involving ZrCl₄(g) and O₃Si-OH*, leading to the formation of O₃Si-O-Zr-Cl* and HCl(g). Energy changes are shown at various points along the reaction coordinate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Coordinate | ΔE (kcal/mol) |\\n|---|---|\\n| ZrCl₄(g) + O₃Si-OH* | 0 |\\n| Complex | -16.9 |\\n| TS | 0 |\\n| O₃Si-O-Zr-Cl* + HCl(g) | -11.9 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This is a viable assumption as there are three more Cl groups that can react with hydroxyl groups on the substrate.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"5 kcal.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, a substrate is usually SiO2 where only the top layer has hydroxyl groups. This does influence the reaction energies.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Water will replace the chlorine with oxygen, resulting in ZrO2.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":8,"width":783,"height":660}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/Joseph H. Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":794,"height":672,"image_format":"jpeg","image_sha256":"8dbe9b63ff76edc3613b94eb8db0c3142cfb4f8a25106c4edd825705834c66f6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_24_fig_3.jpg","caption":"Fig. 3. Reaction path and predicted energetics for the reaction of $\\mathrm{H}_2\\mathrm{O}$ on $\\mathrm{SiO}_2\\mathrm{-O - ZrCl}_3^*$ sites. The purple, gray, red, green, and white atoms denote the zirconium, silicon, oxygen, chlorine and hydrogen atoms, respectively. (For interpretation of the references in colour in this figure legend, the reader is referred to the web version of this article.)","id":"validation/atomic-layer-deposition/simulation-usecase/24/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/24/fig_3","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure illustrates a chemical reaction pathway involving the transformation of O₃Si-O-Zr-Cl* into O₃Si-O-Zr-OH* through the intermediate TS (transition state) and the release of HCl(g), where the represents the energy change (ΔE) during a chemical reaction, showing the activation energy barrier at 20.3 kcal/mol and the overall energy difference between reactants and products.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔE (kcal/mol) |\\n|---|---|\\n| Start | 0 |\\n| TS | -18|\\n| TS | 5.3|\\n| TS | -0.7|\\n| TS | 0.5|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Water is one of the chemicals. It reacts with the Cl groups at the substrate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The water molecule is connected to the zirconium atom but this is no chemical bond, as the zirconium atom already has 4 bonds. So it must be physisorption.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"20.3 kcal/mol\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is possible that more than one water molecule react with the same zirconium unit. If this happens sequentially, the energies related to it are different as the environment of the reaction is different.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":5,"width":791,"height":661}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/Joseph H. Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":797,"height":669,"image_format":"jpeg","image_sha256":"d4f4d2b7afa607de89eab1a19f214e2e3d19135bc2037baba42297f3f01a8ddf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_24_fig_6.jpg","caption":"Fig. 6. Comparison of reaction paths and predicted energetics for the reaction of gaseous $\\mathrm{ZrCl_4}$ on the $\\mathrm{SiO_2 - OH^*}$ sites calculated using (A) $\\mathrm{Si(OH)_3 - OH}$ cluster, (B) $\\mathrm{SiH_3OSi(OH)_2 - OH}$ cluster, and (C) $(\\mathrm{SiH}_3\\mathrm{O})_3\\mathrm{Si - OH}$ cluster, showing cluster size effect on the results. The purple, gray, red, green, and white atoms denote the zirconium, silicon, oxygen, chlorine and hydrogen atoms, respectively. (For interpretation of the references in colour in this figure legend, the reader is referred to the web version of this article.)","id":"validation/atomic-layer-deposition/simulation-usecase/24/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/24/fig_6","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image depicts a reaction scheme illustrating the formation of (SiH₃O)₃Si-OH from ZrCl₄(g) and O₃Si-OH* through a transition state (TS), where the lines show the energy changes (ΔE) for different starting substrates (A, C, B) during a chemical reaction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔE (kcal/mol) A |ΔE (kcal/mol) B |ΔE (kcal/mol) C |\\n|---|---|---|---|\\n| Start | 0 |0 |0 |\\n| Complex | -16|-17|-17|\\n| TS | 0|-0.5|-1|\\n| HCl (g)| -5 |-5.5|-6|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There seems to be little effect, the activation energies are relatively constant.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"16 kcal/mol\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The biggest cluster. This is mainly due to the three backbonds to other SiO clusters.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"These reaction product are removed from the reactor with a turbo pump.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":8,"width":880,"height":459}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/Joseph H. Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":883,"height":472,"image_format":"jpeg","image_sha256":"aec529b37e8f020983f02b85e2330603692a767c78e1442050569d2e271f8fa0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_24_fig_7.jpg","caption":"Fig. 7. Comparison of reaction path and predicted energetics for the reaction of $\\mathrm{H}_2\\mathrm{O}$ on the $\\mathrm{SiO}_2\\mathrm{-O - Zr - Cl}_3^*$ sites calculated using (a) $\\mathrm{Si(OH)_3OZrCl_3}$ cluster, (b) $\\mathrm{SiH_3OSi(OH)_3OZrCl_3}$ cluster, and (c) $\\mathrm{(SiH_3O)_3SiOZrCl_3}$ cluster, showing the cluster effect on the results. The purple, gray, red, green, and white atoms denote the zirconium, silicon, oxygen, chlorine and hydrogen atoms, respectively. (For interpretation of the references in colour in this figure legend, the reader is referred to the web version of this article.)","id":"validation/atomic-layer-deposition/simulation-usecase/24/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/24/fig_7","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image depicts a reaction scheme illustrating the transformation of O₃Si-O-Zr-Cl* into O₃Si-O-Zr-OH* through the interaction with H₂O(g), where the line chart shows the change in energy (ΔE) in kcal/mol for the reaction pathway, indicating the activation energy barrier.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Step | ΔE (kcal/mol) |\\n|---|---|\\n| Start | 0 |\\n| Complex | -17|\\n| TS |4|\\n| HCl (a) | -1|\\n| HCl (g)| 2|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The gases are H2O and HCl, they are not likely to interact as they can not form another molecule.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"20 kcal/mol\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, it is likely that there is enough. However, it does not have to be energetically favoured to do so.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":792,"height":690}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/images/fig_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/24/Joseph H. Han et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":797,"height":700,"image_format":"jpeg","image_sha256":"740836b2e1015a5f9956d1481429ccd7ab6b0dc813d87e7d108b857599327e7b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_50_fig_2.jpg","caption":"Fig. 2 Schematic illustration of the reaction mechanism for Si deposition via DCS. (a) DCS in the gas phase, (b) molecularly adsorbed DCS, (c) DCS-amine adduct, (d) decomposed DCS with $\\mathbb{C}\\mathbb{I}^{-}$ and $\\mathsf{H}^{+}$ and (e) $>\\mathsf{SiH}_2$ with $2\\times \\mathbb{C}\\mathbb{I}^{-} / \\mathbb{H}^{+}$ after second $\\mathsf{Si} - \\mathsf{N}$ bond formation.","id":"validation/atomic-layer-deposition/simulation-usecase/50/fig_2","sample_id":"atomic-layer-deposition/simulation-usecase/50/fig_2","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"},{"panel_id":"d","label":"reaction scheme"},{"panel_id":"e","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The subfigure shows DCS (SiH2Cl2) in the gas phase approaching an amine-terminated surface with NH and NH2 groups.\"},{\"panel_id\":\"b\",\"text\":\"The subfigure shows molecularly adsorbed DCS interacting with surface amine groups, forming an initial adsorption configuration.\"},{\"panel_id\":\"c\",\"text\":\"The subfigure illustrates formation of the DCS–amine adduct, where the Si center is directly bonded to a surface NH2 group.\"},{\"panel_id\":\"d\",\"text\":\"The subfigure shows decomposition of the DCS molecule, producing Cl− and H+ species while the Si fragment remains bound to the surface.\"},{\"panel_id\":\"e\",\"text\":\"The subfigure shows formation of the >SiH2 surface species after a second Si–N bond is formed, accompanied by two Cl−/H+ pairs.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"\"},{\"panel_id\":\"e\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reaction begins with SiH2Cl2 in the gas phase approaching an amine-terminated surface. Surface NH and NH2 groups provide reactive sites that enable subsequent adsorption and chemical interaction with the DCS molecule.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"An NH2 group.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cl− and H+.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":0,"width":272,"height":206},{"panel_id":"b","x":325,"y":9,"width":251,"height":200},{"panel_id":"c","x":598,"y":162,"width":281,"height":219},{"panel_id":"d","x":308,"y":230,"width":268,"height":224},{"panel_id":"e","x":6,"y":271,"width":301,"height":184}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/50/Gregory Hartmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:image_caption"},"width":883,"height":456,"image_format":"jpeg","image_sha256":"be3381cb03bef6adbfd32aafc61570596e726740ecdf74e0cbc032876135f143","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_4d29a97a51094e9b24562cfa2dca9544e86f7d8c9fc36d0b2e8078ef0af11b16.jpg","caption":"","id":"validation/atomic-layer-deposition/simulation-usecase/58/4d29a97a51094e9b24562cfa2dca9544e86f7d8c9fc36d0b2e8078ef0af11b16","sample_id":"atomic-layer-deposition/simulation-usecase/58/4d29a97a51094e9b24562cfa2dca9544e86f7d8c9fc36d0b2e8078ef0af11b16","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":500,"height":381}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/4d29a97a51094e9b24562cfa2dca9544e86f7d8c9fc36d0b2e8078ef0af11b16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/4d29a97a51094e9b24562cfa2dca9544e86f7d8c9fc36d0b2e8078ef0af11b16.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":500,"height":381,"image_format":"jpeg","image_sha256":"4640827521dedfd977f122752ac3ecd1cddd282363ea0f08e100c9e3cffdfc6a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_3914f7d4feee490daf175d163cfc1956eedcc7860677c8e0c5ef61030b8ba77a.jpg","caption":"Fig.14Proposed mechanism for ALE of metal oxides using diketone etch-inhibition and surface cleaning. Adsorption of the Hhfac ligands onto the $\\mathsf{Al}_2\\mathsf{O}_3$ surface. Intial binding is in the chelate configuration, where both O atoms bind to the same surface atom, leading to the formation of volatile species. t time steric hndrance on the surface es to the adsorption of more molules in the monodentate and isolated chelate configurations, which enttly init the thh. The hfac spcs on the urce must then be cled away to ret the urce such that more etching can occur in the next ALE cycle. $\\mathsf{H}_2$ plasma is used in this work to remove the surface inhibition layer.","id":"validation/atomic-layer-etching/experimental-usecase/10/3914f7d4feee490daf175d163cfc1956eedcc7860677c8e0c5ef61030b8ba77a","sample_id":"atomic-layer-etching/experimental-usecase/10/3914f7d4feee490daf175d163cfc1956eedcc7860677c8e0c5ef61030b8ba77a","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":2,"width":1333,"height":400},{"panel_id":"b","x":218,"y":424,"width":871,"height":358}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/3914f7d4feee490daf175d163cfc1956eedcc7860677c8e0c5ef61030b8ba77a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/3914f7d4feee490daf175d163cfc1956eedcc7860677c8e0c5ef61030b8ba77a.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1341,"height":783,"image_format":"jpeg","image_sha256":"deecfeb7c8d8fc3202b612abaf4be50c3fc9e241364e603910972d1a2fb57ff0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig_12.jpg","caption":"Fig. 12 Adsorption pathway for Hhfac on a hydroxylated $\\mathsf{Al}_2\\mathsf{O}_3$ surface. (a) Hhfac molecule initially physisorbs to the surface. (b) Donation of H from Hhfac to the surface, forming $\\mathsf{H}_2\\mathsf{O}$ on the surface. (c) The hfac ligand bound in monodentate configuration, with the $\\mathsf{H}_2\\mathsf{O}$ still bound to the surface. (d) Chelate configuration of the hfac ligand, with both O atoms bound to the same surface Al atom. Adsorption energies for each configuration are shown beneath the images. The arrows indicate potential transitions on the surface and the difference in energy between two configurations.","id":"validation/atomic-layer-etching/experimental-usecase/10/fig_12","sample_id":"atomic-layer-etching/experimental-usecase/10/fig_12","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1117,"height":541}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_12.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1117,"height":541,"image_format":"jpeg","image_sha256":"2c3e2dcbef4101e4a22b7b22504b870d6d0e2e5c0f1625b84a61bd6ea665d20d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig_8.jpg","caption":"Fig. 8 (a) Schematic of the performed experiment to determine whether there is any build-up of Hhfac residue on the $\\mathrm{Al}_2\\mathrm{O}_3$ surface post ALE. FTIR spectra are referenced to the spectrum for the as-deposited $\\mathrm{Al}_2\\mathrm{O}_3$ planar film. (b) Spectra taking in reflection mode after full ALE cycles. A cyclic decrease in absorbance for the Al-O bond region is observed. For the rest, the spectrum shows minimal change over the 5 ALE cycles.","id":"validation/atomic-layer-etching/experimental-usecase/10/fig_8","sample_id":"atomic-layer-etching/experimental-usecase/10/fig_8","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":24,"y":3,"width":627,"height":176},{"panel_id":"b","x":2,"y":180,"width":629,"height":377}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":655,"height":556,"image_format":"jpeg","image_sha256":"dde029b84f1bf0164134c0262afd6a0449ac531c9cd6ca64a9617bbc4db7cb39","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_19_fig_2.jpg","caption":"Fig. 2. Proposed reaction mechanism for thermal ALE $\\mathrm{Al_2O_3}$ thin films using HF and TMA as reactants. (a) Schematic of fluorination and ligand-exchange reactions during thermal ALE; (b) Schematic of the four-center ring transition state in the ligand-exchange reaction. Reproduced from Ref. [26].","id":"validation/atomic-layer-etching/experimental-usecase/19/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/19/fig_2","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This subfigure illustrates the two half reactions in TMA/HF thermal ALE of Al₂O₃. The top row shows the fluorination step where HF converts the Al₂O₃ surface to an AlF₃ passivation layer, releasing H₂O. The bottom row shows the ligand exchange step where TMA (Al(CH₃)₃) reacts with AlF₃, producing volatile AlF(CH₃)₂ and removing material (etched layer thickness Δ).\"},{\"panel_id\":\"b\",\"text\":\"This subfigure depicts the four center ring transition state during the ligand exchange reaction. It shows how aluminum from TMA and aluminum from the AlF₃ surface form a bridged intermediate through F and CH₃ ligands (green dashed bonds), enabling the exchange that produces volatile AlF(CH₃)₂.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Fluorination releases H₂O; ligand exchange releases AlF(CH₃)₂.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Δ indicates the etched layer thickness, representing the amount of Al₂O₃ material removed after one complete ALE cycle.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The four center ring transition state enables ligand exchange by forming transient bridges between aluminum centers from TMA and the AlF₃ surface. Fluorine and methyl groups simultaneously bridge both aluminum atoms (green dashed bonds), facilitating the transfer of CH₃ ligands to surface aluminum and F ligands to the TMA aluminum. This produces volatile AlF(CH₃)₂ that removes aluminum from the film.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Fluorine's ability to form bimetallic bridges between adjacent metal centers facilitates the transition state geometry required for ligand exchange.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":5,"width":646,"height":352},{"panel_id":"b","x":1,"y":352,"width":645,"height":248}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":650,"height":602,"image_format":"jpeg","image_sha256":"b2f591ac1f1a158b422f8ab5090ac6a919294279858908efbf2cffab9be96586","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_19_fig_3.jpg","caption":"Fig. 3. Schematic of proposed reaction mechanism for $\\mathrm{Al}_2\\mathrm{O}_3$ thermal ALE showing (a) $\\mathrm{Sn}(\\mathrm{acac})_2$ reaction and (b) HF reaction. Reproduced from Ref. [16].","id":"validation/atomic-layer-etching/experimental-usecase/19/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/19/fig_3","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This subfigure illustrates the ligand-exchange half-reaction in thermal ALE of Al₂O₃. Sn(acac)₂ (blue) reacts with an AlF₃-terminated surface (top, red-dashed Al–F bonds), exchanging acetylacetonate ligands for fluorine. This produces volatile Al(acac)₃ that removes aluminum from the film, and SnF(acac) byproduct, leaving an exposed Al₂O₃ surface (bottom).\"},{\"panel_id\":\"b\",\"text\":\"This subfigure depicts the fluorination half-reaction. HF reacts with the Al₂O₃ surface bearing SnF(acac) species (top), regenerating the AlF₃ passivation layer (bottom, red-dashed Al–F bonds) while releasing volatile SnF(acac) and H₂O. This prepares the surface for the next ligand-exchange cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The volatility ensures complete removal of aluminum-containing products from the surface, preventing redeposition and allowing etching to stop once the AlF₃ layer is consumed.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The blue structures represent tin-containing species: Sn(acac)₂ precursor molecules (incoming reactant in subfigure a) and SnF(acac) byproduct species (formed during ligand exchange and released during both half-reactions).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The first half-reaction is ligand-exchange, where Sn(acac)₂ reacts with the AlF₃ surface layer, transferring acac ligands to aluminum and forming volatile Al(acac)₃ that removes aluminum from the film. The second half-reaction is fluorination, where HF converts the exposed Al₂O₃ back to AlF₃ while releasing H₂O. This cyclic process enables controlled atomic-scale etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The surface changes from Al–O bonds with adsorbed SnF(acac) species (top) to an AlF₃ layer with Al–F bonds (bottom) after HF exposure.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":2,"width":671,"height":914},{"panel_id":"b","x":663,"y":8,"width":548,"height":909}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":1214,"height":923,"image_format":"jpeg","image_sha256":"b19550a256c9c9bcaa20ce62fa4a127d1500146e986cbf17d23e11bbebfdaf25","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_19_fig_6.jpg","caption":"Fig. 6. Schematic of proposed reaction mechanism for TMA/HF thermal ALE $\\mathrm{SiO_2}$ thin films. Reproduced from Ref. [24].","id":"validation/atomic-layer-etching/experimental-usecase/19/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/19/fig_6","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure illustrates the conversion-fluorination mechanism for thermal ALE of SiO₂. Starting from an AlF₃/Silicate surface (left), TMA exposure converts SiO₂ to Al₂O₃/Silicate while releasing volatile AlFₓ(CH₃)₃₋ₓ and SiFₓ(CH₃)₄₋ₓ products, leaving a CH₃ terminated surface (right). HF exposure then fluorinates the Al₂O₃/Silicate intermediate back to AlF₃/Silicate, releasing H₂O and CH₄. The cyclic process achieves net SiO₂ removal (dotted line indicates etched thickness).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Standard fluorination and ligand exchange fails for SiO₂ because the Si-F bond is too strong to undergo effective ligand exchange to generate volatile Si-containing products. In conversion-fluorination, TMA converts SiO₂ to Al₂O₃ (thermodynamically favorable with ΔG = −235 kcal/mol at 300°C), which can then be fluorinated and removed via the standard ligand exchange pathway.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"TMA step releases AlFₓ(CH₃)₃₋ₓ and SiFₓ(CH₃)₄₋ₓ; HF step releases H₂O and CH₄.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The red layer represents AlF₃/Silicate (after HF fluorination), while the blue layer represents Al₂O₃/Silicate (after TMA conversion).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etch rate increases with TMA pressure: 0.027 Å/cycle at 0.1 Torr up to 0.31 Å/cycle at 4.0 Torr, indicating a pressure dependent reaction mechanism.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":652,"height":564}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":652,"height":564,"image_format":"jpeg","image_sha256":"9eb19bc3676c53d263b65a2597bb29182c5f7dd0ac77c4f4cd5e167fa71232a2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_19_fig_7.jpg","caption":"Fig. 7. Schematic of proposed reaction mechanism for HF/TMA thermal ALE ZnO thin film. Reproduced from Ref. [33].","id":"validation/atomic-layer-etching/experimental-usecase/19/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/19/fig_7","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Shows the fluorination step where HF converts the surface Al₂O₃ layer (cyan) to an AlF₃ passivation layer (yellow) on top of remaining Al₂O₃, with the ZnO substrate below.\"},{\"panel_id\":\"b\",\"text\":\"Shows the TMA ligand exchange and conversion step. TMA removes the AlF₃ layer via ligand exchange and simultaneously converts underlying ZnO to Al₂O₃, resulting in a thinner ZnO layer. This is visible by comparing the ZnO thickness before and after.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ZnO has a much higher EPC of 2.11 Å/cycle at 265°C compared to Al₂O₃, SiO₂, HfO₂, and ZrO₂ which typically show EPC values below 1 Å/cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Yellow represents AlF₃; cyan represents Al₂O₃; gray/white represents ZnO substrate.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA converts ZnO to Al₂O₃ while releasing volatile Zn(CH₃)₂, with ΔG = −166.8 kcal/mol at 265°C making the reaction thermodynamically favorable.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The surface becomes smoother, with RMS roughness decreasing from 11 Å to 5.8 Å after etching.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":7,"width":893,"height":254},{"panel_id":"b","x":3,"y":268,"width":893,"height":253}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":900,"height":520,"image_format":"jpeg","image_sha256":"af55b477cc87012d1674837f8e4fec3acbe90518f908ced29ecbf67826407376","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_19_fig_8.jpg","caption":"Fig. 8. Schematic of proposed reaction mechanism for thermal ALE W thin film using using $\\mathrm{O_2 / O_3}$ , $\\mathrm{BCl}_3$ and HF: (a) oxidation of W using $\\mathrm{O_2 / O_3}$ , (b) conversion of $\\mathrm{WO_3}$ to $\\mathrm{B_2O_3}$ using $\\mathrm{BCl}_3$ with volatile $\\mathrm{WO_xCl_y}$ , and (c) fluorination of $\\mathrm{B_2O_3}$ by HF to form volatile $\\mathrm{BF}_3$ and $\\mathrm{H_2O}$ . Reproduced from Ref. [25].","id":"validation/atomic-layer-etching/experimental-usecase/19/fig_8","sample_id":"atomic-layer-etching/experimental-usecase/19/fig_8","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Shows the oxidation step where O₂/O₃ oxidizes the tungsten metal surface to grow the WO₃ layer (cyan to yellow transformation at the W/WO₃ interface).\"},{\"panel_id\":\"b\",\"text\":\"Shows the conversion step where BCl₃ converts surface WO₃ to B₂O₃ (red layer) while releasing volatile WOₓClᵧ. The B₂O₃ layer acts as a self-limiting passivation.\"},{\"panel_id\":\"c\",\"text\":\"Shows the fluorination step where HF removes the B₂O₃ layer as volatile BF₃ and H₂O. The underlying WO₃ acts as an etch stop. Net etched thickness is indicated.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Yellow represents metallic W; cyan/blue represents WO₃; red/pink represents B₂O₃.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The EPC for W is approximately 2.5 Å/cycle at 207°C.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Metallic W cannot be directly etched by fluorination or conversion reactions. The oxidation step (A) first converts W to WO₃, which then enables the conversion step (B) where BCl₃ transforms WO₃ to B₂O₃. Finally, the fluorination step (C) removes B₂O₃ with HF. This three step sequence is necessary because W itself does not react with BCl₃ or HF.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The standard free energy change (ΔG°) for the reaction between HF and WO₃ is positive, making fluorination of WO₃ thermodynamically unfavorable, so WO₃ acts as an etch stop.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":5,"width":906,"height":202},{"panel_id":"b","x":4,"y":220,"width":903,"height":210},{"panel_id":"c","x":6,"y":444,"width":899,"height":196}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":912,"height":642,"image_format":"jpeg","image_sha256":"7b6bd9799cc4d5515ebff99083dcfbe59af2885b674e1fc372d87473ca0e91ef","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_c466ef032e36d8a6b1b99692843b6c50f4f3f7ca51d12676e6844eb1f694e786.jpg","caption":"","id":"validation/atomic-layer-etching/experimental-usecase/24/c466ef032e36d8a6b1b99692843b6c50f4f3f7ca51d12676e6844eb1f694e786","sample_id":"atomic-layer-etching/experimental-usecase/24/c466ef032e36d8a6b1b99692843b6c50f4f3f7ca51d12676e6844eb1f694e786","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"HF Fluorination Reaction: The top row illustrates step (A) of the Al₂O₃ ALE mechanism. HF reacts with AlCH₃* surface species (remaining from the previous TMA exposure) to form AlF* surface species while releasing CH₄. Simultaneously, HF fluorinates the underlying Al₂O₃ substrate to form an AlF₃ surface layer, with H₂O as a volatile byproduct.\"},{\"panel_id\":\"b\",\"text\":\"TMA Ligand-Exchange Reaction: The bottom row depicts step (B), where trimethylaluminum (TMA) undergoes a ligand-exchange transmetalation reaction with the AlF₃ surface layer. TMA accepts fluorine atoms from AlF₃ while donating methyl groups, producing volatile AlF(CH₃)₂ that desorbs from the surface. This removal of aluminum-containing species enables the net etching of Al₂O₃. The surface is left with AlCH₃* species, ready for the next HF exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA (Al(CH3)3)\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Al2O3 atomic layer etching\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows a lot of dashed lines, this means there are no covalent bonds between the AlF3 groups.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Since during the second step new aluminum is added to the surface whilst the oxygen is fully removed in the first step, the process is more effective in removing oxygen.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"- Left side: fluorinated surface (dominant Al–F termination).\\n- Right side: methyl-terminated surface (dominant Al–CH3 termination).\\n- The step represents replacement of surface F sites by CH3-containing termination.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes. It regenerates a defined –CH₃-terminated surface needed for the next HF exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA transfers methyl (CH₃) ligands to produce volatile AlF(CH₃)₂ products, whereas Sn(acac)₂ transfers acetylacetonate (acac) ligands to produce Al(acac)₃ as the volatile etch product.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TMA is effective because: (1) aluminum has only three valence electrons and an open outer shell, making it a strong Lewis acid; (2) aluminum has a low electronegativity (1.5), which thermodynamically favors fluorine transfer to aluminum during transmetalation; (3) aluminum forms strong Al–F bonds; and (4) TMA has high volatility and excellent reactivity.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. When TMA is paired with H₂O, it performs Al₂O₃ atomic layer deposition (ALD); when paired with HF, it enables Al₂O₃ atomic layer etching (ALE).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The reaction begins with a chemical reaction between Al2O3 film and HF to form fluorinated Al2O3 films, with H2O and CH4, as by-products.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, the first step produces H2O and CH4, while the second one produces AlF(CH3)2\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, it seems that the Al2O3 film is not affected by the HF indicating that the HF has a limited penetration depth leading to a saturating process.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reaction of the surface with HF removes a significant amount of atoms from the surface whilst only adding limited F-atoms. This indicates that the thickness slightly decreases.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"HF reacts with surface –CH3 ligands on Al sites, removing methyl termination and forming volatile byproducts (CH4 and H2O) as indicated. As these ligands are eliminated, the surface becomes fluorinated with Al–F bonds. Overall, the panel illustrates conversion from a methylated Al2O3 surface to a fluorinated Al2O3 surface during the HF exposure step.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"H2O and CH4.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The AlF₃ surface layer serves as the critical intermediate that enables the ligand-exchange transmetalation reaction with TMA. During the HF exposure, the Al₂O₃ surface is converted to an approximately 3.0 Å thick AlF₃ layer through the spontaneous fluorination reaction Al₂O₃ + 6HF → 2AlF₃ + 3H₂O. This AlF₃ layer then reacts with incoming TMA molecules: aluminum in TMA accepts fluorine from AlF₃ while donating methyl groups, forming volatile AlF(CH₃)₂ products that desorb from the surface. Without this intermediate fluoride layer, the ligand-exchange mechanism that produces volatile etch products would not occur, and no material removal would take place.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":7,"width":664,"height":135},{"panel_id":"b","x":19,"y":163,"width":649,"height":157}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/c466ef032e36d8a6b1b99692843b6c50f4f3f7ca51d12676e6844eb1f694e786.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/c466ef032e36d8a6b1b99692843b6c50f4f3f7ca51d12676e6844eb1f694e786.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"not_found"},"width":669,"height":322,"image_format":"jpeg","image_sha256":"84ba381a61444fc51439e8c42c838c55ed85b53d04f2675726617c15f5b8c7ec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_13.jpg","caption":"Figure 13. Schematic of proposed reaction mechanism for $\\mathrm{Al}_2\\mathrm{O}_3$ ALE showing (A) HF reaction and (B) TMA reaction.","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_13","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_13","subset":"reaction-scheme","split":"validation","classification":[{"panel_id":"a","label":"reaction scheme"},{"panel_id":"b","label":"reaction scheme"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"HF Fluorination Reaction: The left panel illustrates the first half-reaction of the Al₂O₃ ALE cycle. The surface initially has AlCH₃* species (shown as Al(CH₃)₂ groups, blue) remaining from the previous TMA exposure, bonded to the Al₂O₃ substrate through oxygen bridges. Upon HF exposure, these methyl groups are replaced by fluorine atoms, releasing CH₄ as a volatile product. Simultaneously, the underlying Al₂O₃ is fluorinated to form an AlF₃ surface layer (red fluorine atoms), with H₂O released as a byproduct. The reaction Al₂O₃ + 6HF → 2AlF₃ + 3H₂O is thermodynamically spontaneous.\"},{\"panel_id\":\"b\",\"text\":\"TMA Ligand-Exchange Reaction: The right panel shows the second half-reaction. TMA (Al(CH₃)₃) reacts with the AlF₃ surface layer through a ligand-exchange transmetalation mechanism. Aluminum in TMA accepts fluorine from the surface AlF₃ while donating methyl groups, producing volatile AlF(CH₃)₂ that desorbs (shown with arrow indicating H₃C-Al(F)-CH₃ leaving). The surface is left with AlCH₃* species bonded to the remaining Al₂O₃ film, ready for the next HF exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Atomic layer etching of Al2O3 films with TMA as a precursor.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The top layer of the film will have a lot of carbon impurities. Fluorine can potentially penetrate the film deeper, leading to fluorine impurities.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As dielectric material in semiconductor electronics.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ligand-exchange reaction produces volatile AlF(CH₃)₂ because this mixed alkyl-fluoride aluminum compound has favorable properties for desorption. AlF(CH₃)₂ has a vapor pressure of approximately 80 Torr at 100°C, making it highly volatile at the 300°C reaction temperature. The transmetalation mechanism involves a four-center ring transition state where fluorine bridges between the surface aluminum and the aluminum in TMA. During this exchange, TMA accepts fluorine atoms from the AlF₃ layer while donating methyl groups, resulting in a stable molecular species that readily desorbs from the surface, carrying aluminum away and enabling net etching.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA reacts with the AlF₃ surface layer to form volatile AlF(CH₃)₂ products and can remove AlF₂(CH₃)* species, while HF reacts with AlCH₃* species and Al₂O₃ to form AlF* and AlF₃, respectively.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"AlCH₃, AlF, AlF₂(CH₃), AlF₃, Al(CH₃)₃\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The schematic shows that the sequential HF and TMA reactions are self-limiting: HF selectively reacts with AlCH₃* and Al₂O₃ to form AlF* and AlF₃, while TMA reacts with the AlF₃ surface to produce volatile AlF(CH₃)₂ and remove intermediate species. This controlled sequence ensures that only a defined amount of Al₂O₃ is etched per cycle, demonstrating the effectiveness of ALE in achieving precise, layer-by-layer material removal.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first reaction between AL2O3 film and HF to form fluorinated Al2O3 films, with H2O and CH4, as by-products.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The reaction products are water (H2O) and methane (CH4).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Water reacts with the methyl groups creating aluminum oxide in the first half cycle. In the second half cycle, water can potentially react with the AlF(CH3)2, leading to the deposition of aluminum oxide, thereby reducing the etch rate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Al₂O₃ + 4Al(CH₃)₃ + 6HF → 6AlF(CH₃)₂ + 3H₂O\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the HF fluorination reaction (A): H₂O and CH₄. During the TMA ligand-exchange reaction (B): AlF(CH₃)₂.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The self-limiting behavior arises from the complementary surface terminations after each half-reaction. After the HF exposure, the surface is terminated with an AlF₃ layer that passivates the underlying Al₂O₃, preventing further fluorination—similar to how native oxide layers protect metals. This AlF₃ layer has a Pilling-Bedworth ratio greater than 1 (approximately 1.8), indicating complete surface coverage. After the TMA exposure, the AlF₃ is converted to AlCH₃* surface species, which are unreactive toward additional TMA. Each half-reaction therefore proceeds only until the available reactive sites are consumed, after which excess reactant exposure produces no additional change. This ensures atomic-level control over the etch depth.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":4,"y":7,"width":346,"height":421},{"panel_id":"b","x":360,"y":6,"width":311,"height":431}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_13.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"reaction scheme","caption_source":"content.json:img_caption"},"width":672,"height":486,"image_format":"jpeg","image_sha256":"6ae2eb5354a80b890715cdbd25f30963262604dbb8c52ed85d485ab4c3d4df9e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/scatter-plot/test/metadata.jsonl b/subsets/scatter-plot/test/metadata.jsonl index fc2f99ca21fe7974d4b4db0af02d21f391a46b44..2a69352380a73e1efa2f53e188b691a9f1a303ce 100644 --- a/subsets/scatter-plot/test/metadata.jsonl +++ b/subsets/scatter-plot/test/metadata.jsonl @@ -1,31 +1,31 @@ -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_15.jpg","caption":"FIG. 15. Surface coverage of Ti atoms as a function of the number of ALD cycles, as measured by a quartz crystal microbalance at room temperature (Ref. 232). The precursor employed was $\\mathrm{TiCl_4}$ and the reactant was an $\\mathrm{H}_{2}$ plasma. For deposition on the as-received crystal, the growth showed a linear trend after $\\sim 5$ cycles. Reprinted with permission from H. Kim et al., J. Vac. Sci. Technol. A 20, 802 (2002). Copyright 2002 American Vacuum Society.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_15","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_15","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_15.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":600,"height":511,"image_format":"jpeg","image_sha256":"9eeda7167bca5985b4e09df0e493cc47e696b113600a26d3c61fd50ce6818070","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":600,"height":511}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a linear relationship between Ti atom surface coverage and the number of ALD cycles. The direct proportionality indicates a consistent growth rate per cycle, characteristic of self-limiting reactions in atomic layer deposition (ALD).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | Ti Atom Surface Coverage (×10¹⁵ /cm²) |\\n|------------------|---------------------------------------|\\n| 0 | 0 |\\n| 10 | 5 |\\n| 20 | 10 |\\n| 30 | 15 |\\n| 40 | 20 |\\n| 50 | 25 |\\n| 60 | 30 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ti atom surface coverage increases linearly with the number of ALD cycles, indicating a constant growth per cycle characteristic of ideal ALD behavior.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ti atom surface coverage (×10¹⁵/cm²).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Consistent growth rate per cycle, Self-limiting surface reactions, Stable precursor adsorption behavior\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_19.jpg","caption":"FIG. 19. (Color online) Water vapor transmission rate (WVTR) of a $20 \\mathrm{nm}$ thick $\\mathrm{Al}_2\\mathrm{O}_3$ films on poly(2,6-ethylenenaphthalate) (PEN) substrates as a function of the deposition temperature (Ref. 54). The $\\mathrm{Al}_2\\mathrm{O}_3$ films were deposited by plasma-assisted ALD using $\\mathrm{AlMe}_3$ as the precursor and an $\\mathrm{O}_2$ plasma as the reactant. The inset shows the WVTR as a function of the film thickness for a film deposited at room temperature. The WVTR values were determined using a standard calcium test (Ref. 378) and include water permeation through pinholes which are possibly present. From E. Langereis et al., Appl. Phys. Lett. 89, 081915 (2006). Reprinted with permission. Copyright 2006, American Institute of Physics.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_19","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_19","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_19.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_19.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":608,"height":456,"image_format":"jpeg","image_sha256":"530d21b8017f2057f5a4ea6d658d9c782869704da620531dc7929468e831e84b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":603,"height":451},{"panel_id":"b","x":122,"y":34,"width":302,"height":221}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares the water vapor transmission rate (WVTR) as a function of deposition temperature for Al₂O₃ films, with an inset showing WVTR versus film thickness on PEN substrates. Increasing deposition temperature initially reduces WVTR due to improved film density but rises at higher temperatures. The inset reveals that increasing Al₂O₃ thickness significantly decreases WVTR, indicating enhanced barrier performance.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition temperature (°C) | WVTR (g m⁻² day⁻¹) |\\n|---|---|\\n| 20 | 0.008 |\\n| 30 | 0.009 |\\n| 40 | 0.01 |\\n| 50 | 0.011 |\\n| 60 | 0.012 |\\n| 70 | 0.013 |\\n| 80 | 0.014 |\\n| 90 | 0.015 |\\n| 100 | 0.016 |\"},{\"panel_id\":\"b\",\"text\":\"| Al₂O₃ thickness (nm) | WVTR (g m⁻² day⁻¹) |\\n|---|---|\\n| 0 | 0.4 |\\n| 10 | 0.01 |\\n| 20 | 0.02 |\\n| 30 | 0.03 |\\n| 40 | 0.04 |\\n| 50 | 0.05 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"WVTR (Water Vapor Transmission Rate) in g·m⁻²·day⁻¹\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Thicker Al₂O₃ improves barrier, WVTR drops to ~40 nm, Diminishing returns beyond\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"WVTR decreases with increasing film thickness due to improved barrier density, but shows a minimum at moderate deposition temperatures, rising again at higher temperatures due to potential defect formation.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_21_fig_2.jpg","caption":"Fig. 2 Saturation curves for (a) thermal and (b) plasma-assisted ALD of $\\mathrm{Li_2CO_3}$ obtained at $150^{\\circ}\\mathrm{C}$ showing the self-limiting growth behavior of the ALD process. The solid line serves as a guide to the eye. Dotted lines indicate the chosen standard values and the corresponding growth per cycle. Note that the reaction time of $\\mathrm{H}_2\\mathrm{O}$ after dosing was kept at $4\\mathrm{s}$ .","id":"test/atomic-layer-deposition/experimental-usecase/21/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/21/fig_2","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/N. Hornsveld et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":1292,"height":411,"image_format":"jpeg","image_sha256":"fdc41a460aaed2018fd2f52daa3e9d459869f1c065260ad4973d878829020736","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":4,"width":745,"height":403},{"panel_id":"b","x":752,"y":5,"width":541,"height":403}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Saturation curves for thermal ALD of Li2CO3. The line chart shows the growth per cycle (Å) as a function of LiO'Bu dose (s), H2O dose and CO2 dose.\"},{\"panel_id\":\"b\",\"text\":\"Saturation curves for plasma-assisted ALD of Li2CO3. The line chart shows the growth per cycle (Å) as a function of LiO'Bu dose and plasma duration.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Parameter | Growth per Cycle (Å) |\\n|-------------------|-----------------------|\\n| LiO'Bu dose (s) | 0.6 |\\n| H₂O dose (ms) | 0.6 |\\n| CO₂ dose (s) | 0.6 |\"},{\"panel_id\":\"b\",\"text\":\"| Parameter | Growth per Cycle (Å) |\\n|---------------------|-----------------------|\\n| LiO'Bu dose (s) | 0.8 |\\n| Plasma duration (s) | 0.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A LiOtBu dose of 6 s, a water dose of 50 ms and a CO2 dose of 2 s were chosen as standard conditions for thermal ALD of Li2CO3.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Without H2O dosing no film growth occurred and without CO2, LiOH was formed. Due to a slower response speed of the CO2 valve, dosing of 0.5 s or less did not deliver any CO2 in the chamber (no pressure increase was observed). Purge steps after LiOtBu and CO2 dose of 2 s are sufficient to remove the reaction products and unreacted species from the processing chamber, although 5 s purge was necessary for H2O. A growth per cycle of 0.60 °A was found for the thermal ALD process.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The saturation behavior of the surface reactions during the two half cycles of the plasma-assisted ALD process, can be seen in b. For both half-cycles purge steps of 2 s are sufficient to remove the reaction products and unreacted species. A growth per cycle of 0.82 °A was obtained for a deposition temperature of 150 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_48_fig_1.jpg","caption":"FIG. 1. (Color online) GPC values as a function of (a) HyALD dose; (b) Ar purge time after precursor dose; (c) $\\mathrm{O}_2$ plasma exposure; and (d) purge time after the plasma step. The substrate temperature during the process was $250^{\\circ}\\mathrm{C}$ . The dashed lines serve as a guide to the eyes.","id":"test/atomic-layer-deposition/experimental-usecase/48/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/48/fig_1","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"},{"panel_id":"d","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/Sharma et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"48","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":997,"height":714,"image_format":"jpeg","image_sha256":"86058ca64999979f7b706706b06ff40ef18284e0119545cbef9c8093a10c294b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":4,"width":501,"height":362},{"panel_id":"b","x":509,"y":5,"width":486,"height":362},{"panel_id":"c","x":1,"y":368,"width":501,"height":345},{"panel_id":"d","x":505,"y":366,"width":487,"height":345}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between HfCp(NMe₂)₃ dose and GPC (nanometers). GPC increases sharply at short doses and then levels off near ~0.11 nm/cycle.\"},{\"panel_id\":\"b\",\"text\":\"The scatter plot shows the relationship between HfCp(NMe₂)₃ purge time and GPC (nanometers). The data points are relatively constant around 0.11 nm with no significant changes observed.\"},{\"panel_id\":\"c\",\"text\":\"The scatter plot shows the relationship between O₂ plasma exposure time and GPC (nanometers). The data points increase slightly with increasing exposure time up to 0.11 nm.\"},{\"panel_id\":\"d\",\"text\":\"The scatter plot shows the relationship between O₂ plasma purge time and GPC (nanometers). The data points decrease slightly with increasing exposure time.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HfCp(NMe₂)₃ dose (s) | GPC (nm) |\\n|---|---|\\n| 0.5 | 0.04 ± 0.008 |\\n| 1 | 0.09 ± 0.008 |\\n| 3 | 0.10 ± 0.008 |\\n| 5 | 0.11 ± 0.008 |\\n| 8 | 0.11 ± 0.008 |\"},{\"panel_id\":\"b\",\"text\":\"| HfCp(NMe₂)₃ purge (s) | GPC (nm) |\\n|---|---|\\n| 0 | 0.11 ± 0.008|\\n| 1 | 0.107 ± 0.008 |\\n| 3 | 0.106 ± 0.008 |\\n| 5 | 0.106 ± 0.008 |\\n| 10 | 0.108 ± 0.008 |\"},{\"panel_id\":\"c\",\"text\":\"| O₂ plasma exposure time (s) | GPC (nm) |\\n|---|---|\\n| 1 | 0.07 ± 0.008 |\\n| 3 | 0.09 ± 0.008 |\\n| 5 | 0.10 ± 0.008 |\\n| 8 | 0.11 ±0.008 |\"},{\"panel_id\":\"d\",\"text\":\"| O₂ plasma purge (s) | GPC (nm) |\\n|---|---|\\n| 0 | 0.12 ± 0.008 |\\n| 1 | 0.118 ± 0.008 |\\n| 2 | 0.111 ± 0.008 |\\n| 3 | 0.110 ± 0.008 |\\n| 4 | 0.108 ± 0.008 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After approx. 3 s of HfCp(NMe₂)₃ dose (~0.11 nm/cycle).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, short purging after the HfCp(NMe₂)₃ step appears to adequately prevent additional (non-self-limiting) growth. The GPC at very short purge times is essentially the same as at longer purge times and remains near ≈0.11 nm/cycle within the error bars. Because increasing the purge duration does not lower the GPC relative to the short-/no-purge case, there is no evidence of extra growth from residual precursor.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Very short purges can leave behind reactive byproducts, that inflate GPC.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After approx. 5 s. of plasma exposure (beyond this point, the change in growth is within the error bars).\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_6_fig2.jpg","caption":"FIG.2. $\\mathrm{SnO_x}$ growth rate determined by VASE, as a function of (a) and (c) TDMASn pulse length $\\mathfrak{t}_1$ for timing sequences of $\\mathrm{t}_1{:}30{:}2{:}30\\mathrm{s}$ and (b) and (d) $\\mathrm{H}_2\\mathrm{O}$ pulse length $\\mathfrak{t}_3$ for timing sequences of $1:30:\\mathrm{t}_3:30\\mathrm{s}$ The substrate was Si(100) at $150^{\\circ}\\mathrm{C}$ for (a) and (b) and at $30^{\\circ}\\mathrm{C}$ for (c) and (d).","id":"test/atomic-layer-deposition/experimental-usecase/6/fig2","sample_id":"atomic-layer-deposition/experimental-usecase/6/fig2","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"},{"panel_id":"d","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/Mullings et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":605,"height":1208,"image_format":"jpeg","image_sha256":"96299feee181c204672d670177f523f7d4dd9342f4fde29d884d56cf20daa549","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":8,"width":599,"height":285},{"panel_id":"b","x":7,"y":313,"width":597,"height":288},{"panel_id":"c","x":0,"y":614,"width":605,"height":288},{"panel_id":"d","x":4,"y":916,"width":600,"height":291}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents growth rate dependence on pulse length for TDMASn and H₂O across four panels (a–d), highlighting two distinct growth regimes. Panels (a) and (b) show saturation behavior around ~0.7 Å/cycle, with growth plateauing beyond 1–2 seconds of precursor exposure, indicative of self-limiting ALD reactions. In contrast, panels (c) and (d) exhibit a much higher growth rate of ~2.0 Å/cycle under shorter pulse conditions, suggesting a different growth mechanism or system configuration. These observations confirm typical ALD characteristics and may imply process differences such as thermal vs. plasma ALD, or substrate surface reactivity changes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TDMASn Pulse Length (s) | Growth Rate (A/cycle) |\\n|---|---|\\n| 0.0 | 0.0 |\\n| 1.0 | 0.7 |\\n| 2.0 | 0.7 |\\n| 4.0 | 0.7 |\\n| 6.0 | 0.7 |\"},{\"panel_id\":\"b\",\"text\":\"| H₂O Pulse Length (s) | Growth Rate (A/cycle) |\\n|---|---|\\n| 0.0 | 0.15 |\\n| 1.0 | 0.65 |\\n| 2.0 | 0.75 |\\n| 4.0 | 0.7 |\\n| 6.0 | 0.7 |\"},{\"panel_id\":\"c\",\"text\":\"| TDMASn Pulse Length (s) | Growth Rate (A/cycle) |\\n|---|---|\\n| 0.0 | 0.0 |\\n| 1.0 | 2.0 |\\n| 2.0 | 2.0 |\\n| 4.0 | 2.0 |\"},{\"panel_id\":\"d\",\"text\":\"| H₂O Pulse Length (s) | Growth Rate (A/cycle) |\\n|---|---|\\n| 0.0 | 0.0 |\\n| 1.0 | 2.0 |\\n| 2.0 | 2.0 |\\n| 4.0 | 2.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"(a), (b), saturation at ~0.7 Å/cycle, (c), (d), saturation at ~2.0 Å/cycle, (b), (d), initial growth increases with H₂O pulse time.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.0 seconds.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The consistent saturation behavior observed in each panel confirms the self-limiting nature of ALD surface reactions. In panels (a) and (b), the growth rate increases rapidly with precursor pulse time but plateaus at around 0.7 Å/cycle, indicating sufficient surface exposure. Panels (c) and (d) follow a similar saturation trend but reach a much higher steady-state growth rate of 2.0 Å/cycle, suggesting a different process condition or chemistry, such as enhanced reactivity or modified surface structure.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_6_fig_3.jpg","caption":"FIG. 3. $\\mathrm{SnO_x}$ film thickness as a function of number of ALD cycles yielding a growth rate of $0.70\\mathrm{\\AA}$ cycle. Thicknesses were obtained using VASE for films deposited on Si(100) at $150^{\\circ}\\mathrm{C}$ with a time sequence of $130:2:30$","id":"test/atomic-layer-deposition/experimental-usecase/6/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/6/fig_3","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/Mullings et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":609,"height":300,"image_format":"jpeg","image_sha256":"2d001e88209262fd07b365fec00cc4faca3b6c7431ebfcb2b8fb197cb473134d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":609,"height":300}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart presents a linear relationship between the number of SnO₂ ALD cycles and film thickness, highlighting consistent growth per cycle. The trend demonstrates self-limiting behavior typical of ALD, where each cycle deposits a nearly constant thickness of material. At 700 cycles, the film reaches approximately 480 Å, implying a growth rate of roughly 0.69 Å/cycle. This confirms a stable ALD process, with high conformity and control over thickness scaling.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of SnO₂ ALD cycles | Film Thickness (Å) |\\n|---|---|\\n| 0 | 0 |\\n| 100 | 50 |\\n| 200 | 100 |\\n| 500 | 350 |\\n| 700 | 480 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The linear relationship between ALD cycles and film thickness confirms that the SnO₂ growth is self-limiting and well-controlled. This behavior is characteristic of atomic layer deposition, where each cycle deposits a nearly uniform thickness. Such repeatability across hundreds of cycles highlights the process stability and makes it ideal for precise thickness control in thin-film applications.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"100 cycles ≈ 75 Å, 200 cycles ≈ 150 Å, 500 cycles ≈ 375 Å, 700 cycles ≈ 480 Å.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 0.69 Å/cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_6_fig_4.jpg","caption":"FIG. 4. $\\mathrm{SnO_x}$ ALD growth rate as a function of temperature determined using VASE for films deposited on Si(100) for 200 cycles with timing sequence $1:30:2:30\\mathrm{s}$","id":"test/atomic-layer-deposition/experimental-usecase/6/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/6/fig_4","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/Mullings et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":609,"height":316,"image_format":"jpeg","image_sha256":"b200b53139f6df66beeef951457b1c86ca48fc85609a9da3b192107fcab39cfb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":609,"height":316}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot illustrates the variation in growth rate as a function of deposition temperature during a material deposition process, likely ALD. The plot reveals a clear negative correlation: as the deposition temperature increases from 25 °C to 200 °C, the growth rate steadily decreases from 2.0 Å/cycle to 0.4 Å/cycle. This trend may indicate a transition from a kinetically favorable low-temperature regime to a surface-limited regime at higher temperatures, where desorption or precursor decomposition could reduce deposition efficiency\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition Temperature (°C) | Growth Rate (Å/cycle) |\\n|---|---|\\n| 25 | 2.0 |\\n| 50 | 1.8 |\\n| 75 | 1.5 |\\n| 100 | 1.2 |\\n| 125 | 1.0 |\\n| 150 | 0.8 |\\n| 175 | 0.6 |\\n| 200 | 0.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The growth rate decreases consistently as the deposition temperature increases. At lower temperatures (25 °C–75 °C), the growth rate is relatively high, indicating effective precursor adsorption and surface reaction. As the temperature increases beyond 100 °C, the growth rate gradually drops, potentially due to decreased surface sticking probability or thermal decomposition of precursors, which reduces surface saturation efficiency. This suggests that optimal ALD conditions for maximum growth occur at lower temperatures in this process.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"25 °C, 50 °C, 75 °C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.8 Å/cycle\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_6_fig_5.jpg","caption":"FIG. 5. $\\mathrm{SnO_x}$ growth rate at $30^{\\circ}\\mathrm{C}$ determined by VASE as a function of nitrogen purge time following (a) TDMASn pulse length and (b) $\\mathrm{H}_2\\mathrm{O}$ pulse length for timing sequences of $1:1:2:1\\mathrm{t}_4\\mathrm{s}$ . The substrate was Si(100).","id":"test/atomic-layer-deposition/experimental-usecase/6/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/6/fig_5","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/Mullings et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":608,"height":606,"image_format":"jpeg","image_sha256":"2ca2983ab7609432e47df2a26cdb13f195f8619500e1c8532226c183134d4324","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":6,"width":601,"height":297},{"panel_id":"b","x":1,"y":311,"width":603,"height":297}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The two scatter plots examine how growth rate varies with increasing N₂ purge time after the TDMASn pulse during an ALD process. In both cases, a sharp decrease in growth rate is observed between 0 s and 60 s of purge time, indicating rapid removal or deactivation of reactive surface species. In plot (a), the growth rate partially recovers at intermediate purge times, while in (b), it continues to decrease monotonically. This suggests different mechanisms or sensitivities to precursor byproducts or surface reactivity in the two experimental conditions, possibly related to substrate type, reactant sequence, or deposition temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| N₂ Purge after TDMASn Pulse (s) | Growth Rate (Å/cycle) |\\n|---|---|\\n| 0 | 2.5 |\\n| 60 | 2.0 |\\n| 180 | 2.7 |\\n| 360 | 2.2 |\"},{\"panel_id\":\"b\",\"text\":\"| N₂ Purge after TDMASn Pulse (s) | Growth Rate (Å/cycle) |\\n|---|---|\\n| 0 | 3.5 |\\n| 60 | 2.0 |\\n| 180 | 1.8 |\\n| 360 | 1.7 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"0 s ≈ 3.5 Å/cycle, 60 s ≈ 2.0 Å/cycle, 180 s ≈ 1.8 Å/cycle, 360 s ≈ 1.7 Å/cycle.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure shows that increasing the N₂ purge time after the TDMASn pulse significantly affects the growth rate. In both experimental conditions, the growth rate sharply decreases between 0 and 60 seconds of purge time, suggesting a rapid loss of reactive surface species or byproduct accumulation effects. In plot (a), the growth partially recovers at 180 seconds, while in plot (b), it declines more steadily, indicating a stronger sensitivity to purge time. This highlights the importance of purge duration in maintaining process efficiency and controlling film uniformity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.7 Å/cycle.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_62_fig_6.jpg","caption":"FIG. 6. (Color online) (a) Time-integrated emission intensity at $388~\\mathrm{nm}$ related to CN emission, as a function of the $\\mathrm{Ta}[\\mathrm{N}(\\mathrm{CH}_3)_2]_5$ exposure time during plasma-assisted ALD of TaN. The emission intensity for zero $\\mathrm{Ta}[\\mathrm{N}(\\mathrm{CH}_3)_2]_5$ exposure time is due to emission from the $\\mathrm{H}_2$ plasma. (b) Time-integrated emission intensities of O plasma species and $\\mathrm{H}$ and CO reaction products as a function of the number of consecutive $\\mathrm{Al}(\\mathrm{CH}_3)_3$ doses in the $\\mathrm{Al}_2\\mathrm{O}_3$ plasma-assisted ALD cycle. The lines serve as guides to the eye.","id":"test/atomic-layer-deposition/experimental-usecase/62/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/62/fig_6","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/Mackus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"62","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":625,"height":1066,"image_format":"jpeg","image_sha256":"f405c52eafd7accdee1e22abcd058d6134dab69ff4d8b70550b5680dc2ba1d84","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":617,"height":539},{"panel_id":"b","x":3,"y":540,"width":625,"height":518}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the integrated intensity of a CN peak after a certain Ta[N(CH₃)₂₅] exposure time.\"},{\"panel_id\":\"b\",\"text\":\"The chart displays the integrated intensity of different plasma species against the number of Al(CH₃) doses.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ta[N(CH₃)₂₅] exposure time (s) | Integrated intensity (a.u.) |\\n|---|---|\\n|0| 750 | \\n|1| 840 | \\n|2| 870 | \\n|3| 880 | \\n|4| 880 | \\n|5| 880 |\\n|6| 880 | \\n|7| 880 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Al(CH₃) doses| Integrated intensity (a.u.) O | Integrated intensity (a.u.) H | Integrated intensity (a.u.) CO | \\n|---|---|---|---|\\n| 0 |60|0|0|\\n| 1 |52|23|38|\\n| 2 |50|42|60|\\n| 3 |42|50|68|\\n| 4 |40|58|72|\\n| 5 |40|62|80|\\n| 6 |40|62|80|\\n| 8 |40|62|80|\\n| 12 |40|62|80|\\n| 16 |40|62|80|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The required exposure time is 4 seconds.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the pure hydrogen plasma, there are also species with intensity at this wavelength. This is used as the reference for the intensity after precursor dose.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It takes 6 doses.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the data, peaks related to oxygen species are visible. This is a clear indication that the plasma is an oxygen plasma.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_1.jpg","caption":"Fig. 1. Comparison of calculated rate constant with experiment [14] for the reaction $\\mathrm{TMG} \\rightarrow \\mathrm{DMG} + \\mathrm{CH}_3$ .","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_1","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":589,"height":431,"image_format":"jpeg","image_sha256":"c2f0a69e7119d65b367dcbd1985233a37f0e06e7a7df893cbfa1c1aaa7a1cf13","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":587,"height":425}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot compares calculated reaction rate constants for Trimethylgallium (TMG) decomposition with experimental data from a previous work. The Arrhenius plot of log(k) versus reciprocal temperature (10000/T) shows strong agreement between the computed values (triangles) and experimental points. This consistency confirms that the ab initio–derived activation barriers accurately represent the gas-phase decomposition kinetics.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 10000/T (1/K) | log k (1/sec) | Work |\\n|--------------:|--------------:|------------|\\n| 7.0 | 6.4 | This work |\\n| 7.3 | 6.1 | This work |\\n| 7.6 | 5.8 | This work |\\n| 8.0 | 5.5 | This work |\\n| 8.3 | 5.2 | This work |\\n| 8.7 | 4.9 | This work |\\n| 9.0 | 4.6 | This work |\\n| 9.3 | 4.3 | This work |\\n| 9.6 | 4.0 | This work |\\n| 9.9 | 3.7 | This work |\\n| 10.2 | 3.4 | Experiment |\\n| 10.5 | 3.1 | Experiment |\\n| 10.8 | 2.8 | Experiment |\\n| 11.1 | 2.5 | Experiment |\\n| 11.4 | 2.2 | Experiment |\\n| 11.7 | 1.9 | Experiment |\\n| 12.0 | 1.6 | Experiment |\\n| 12.3 | 1.3 | Experiment |\\n| 12.6 | 1.0 | Experiment |\\n| 12.9 | 0.7 | Experiment |\\n| 13.2 | 0.4 | Experiment |\\n| 13.5 | 0.1 | Experiment |\\n| 13.8 | -0.2 | Experiment |\\n| 14.1 | -0.5 | Experiment |\\n| 14.4 | -0.8 | Experiment |\\n| 14.7 | -1.1 | This work |\\n| 15.0 | -1.4 | This work |\\n| 15.6 | -2.5 | This work |\\n| 16.5 | -3.8 | This work |\\n| 17.5 | -5.5 | This work |\\n| 19.5 | -9.5 | This work |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"I - Region 7 (10000/T): High temperature, corresponding to a very fast reaction rate (log k ≈ 5).\\nII - Region 14 (10000/T): Moderate temperature, where the reaction rate decreases significantly (log k ≈ −2).\\nIII - Region 20 (10000/T): Low temperature, at which the reaction is effectively negligible (log k ≈ −12).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Experimental data is absent at low temperatures (10000/T > 15) because the reaction becomes too slow to measure accurately in a lab setting. However, the computational route (triangles) extends well into this region (log k-12). This makes the theoretical model superior for simulating cool-down zones or exhaust lines, ensuring that even trace decomposition at low temperatures is accounted for in safety or clogging models.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The linear agreement confirms that the ab initio-derived transition state geometry and its associated energy barrier accurately represent the real kinetic pathway. The fundamental connection is Transition State Theory (TST), which states that the rate constant is directly governed by the Gibbs free energy of the activated complex. The close match validates that the computationally modeled reaction coordinate and barrier height (property) correctly map to the true chemical structure of the rate-determining transition state.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies that ab initio methods are a reliable tool for predictive process design. Engineers can use them to accurately model how temperature affects TMG decomposition rates in the gas phase, which is critical for controlling precursor delivery and reactivity in the MOCVD chamber. This allows for the in silico optimization of temperature and pressure parameters to maximize growth efficiency and film quality before costly and time-consuming reactor trials.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_11.jpg","caption":"Fig. 11. Comparison of numerically calculated growth rate with experiment [3] at the diffusion-limited regime using the reactor geometry shown in Fig. 10.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_11","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_11","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":592,"height":434,"image_format":"jpeg","image_sha256":"68487a207a6a6934c89385270b76cc3237c82e94c61fdf63460e3f178bcf7fc4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":5,"width":584,"height":428}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot compares numerical predictions with experimental growth rates from Theodoropoulos et al. specifically within the diffusion-limited regime. The data shows a nearly constant growth rate (μm/hr) across the temperature range of 1120–1300 K, which the simulation reproduces accurately. The experiment data points are represented by diamonds, while the numerical results from the present study are shown as circles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| T (K) | Growth Rate (µm/hr) | Work |\\n|-------|---------------------|----------------------|\\n| 1120 | 2.50 | Experimental study |\\n| 1160 | 2.50 | Numerical (this work)|\\n| 1180 | 2.50 | Experimental study |\\n| 1200 | 2.55 | Numerical (this work)|\\n| 1220 | 2.50 | Experimental study |\\n| 1240 | 2.55 | Numerical (this work)|\\n| 1280 | 2.45 | Experimental study |\\n| 1320 | 2.50 | Numerical (this work)|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process is mass-transport (diffusion) limited. Since the rate is independent of temperature (flat line), surface reactions are fast and not the bottleneck. Therefore, increasing the temperature further will have no effect. However, increasing the precursor flow rate (flux) would directly increase the supply of reactants reaching the surface, thereby increasing the growth rate.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The simulation results (circles) closely match the experimental data (diamonds) at 1270 K and across the entire temperature range, with overlapping deposition rates near 2.5 μm/hr. This strong agreement demonstrates that the numerical model accurately captures the reactor transport phenomena, including diffusivity, boundary layer effects, and fluid flow, confirming its predictive reliability in this regime.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The constant growth rate indicates the process has entered a diffusion-limited regime. At lower temperatures, growth is typically reaction-limited, where the rate increases exponentially with temperature. Above a certain temperature, the surface reaction becomes so fast that the rate is instead limited by the slower, weakly temperature-dependent physical transport of reactants through the gas boundary layer to the surface, resulting in the observed plateau.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The flat growth rate profile across a 180 K window demonstrates inherent robustness to temperature fluctuations. This means that minor hot or cold spots in a large reactor will not translate into significant thickness variations, leading to better wafer-scale uniformity and higher manufacturing yield without requiring prohibitively precise temperature control.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_8.jpg","caption":"Fig. 8. Comparison of numerically calculated growth rates with experiment [5] along the radius of the wafer for the reactor shown in Fig. 7. Case I: pressure 100torr, $T = 1273\\mathrm{K}$ , $\\mathrm{NH}_3 = 2\\mathrm{slpm}$ , $\\mathrm{H}_2 = 10\\mathrm{slpm}$ , $\\mathrm{TMG} = 0.248\\mathrm{scm}$ .","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_8","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_8","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":589,"height":450,"image_format":"jpeg","image_sha256":"beb86eca9b4757e9cca03de1f5f6bf4c4eb61b0d3c987c2aec0ebea9ad4ee803","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":6,"width":584,"height":443}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the radial GaN growth rate profile in a stagnation-flow reactor under Case I conditions with high H₂ flow. The simulated curve (diamonds with line) follows the experimental data (circles), with only minor deviation near the wafer center. This demonstrates that the model can reasonably capture spatial non-uniformity in convection-dominated growth conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Radius (cm) | Growth Rate (mm/hr) | study type |\\n|---|---| --- |\\n| 0 | 17.9 | Experiment |\\n| 0.5 | 6.7 | Numerical (present study) |\\n| 0.5 | 17.9 | Experiment |\\n| 1.0 | 4.2 | Numerical (present study) |\\n| 1.0 | 3.1 | Experiment |\\n| 1.5 | 2.7 | Numerical (present study) |\\n| 1.5 | 4 | Experiment |\\n| 2.0 | 1.9 | Numerical (present study) |\\n| 2.0 | 2.6 | Experiment |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Defining the reactor geometry and set the condition: high H₂ carrier gas flow.\\n\\n2. Solving the coupled equations for fluid flow, heat transfer, and chemical reactions across the 2D/3D domain.\\n\\n3. Extract the calculated growth rate at multiple points along the wafer radius.\\n\\n4. Plotting these values to create the spatial profile.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, for edge yield optimization, the model is reliable as it tracks the depletion profile accurately. However, it is totally inadequate for predicting center-wafer behavior.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The growth rate decreases from the center to the edge. This is caused by boundary layer development and precursor depletion. Under high convection, fresh precursor is delivered primarily to the center (stagnation point), then flows radially outward, becoming progressively depleted as it deposits material, leading to lower growth rates at larger radii.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, a 15-20% thickness variation would translate directly into an unacceptable variation in device electrical properties, such as threshold voltage and on-resistance, across the wafer. For power transistors, such non-uniformity would drastically reduce manufacturing yield, as devices from different radial positions would not meet the same specification.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_9.jpg","caption":"Fig. 9. Comparison of numerically calculated growth rates with experiment [5] along the radius of the wafer for the reactor shown in Fig. 7. Case II: pressure 100torr, $T = 1273\\mathrm{K}$ , $\\mathrm{NH}_3 = 2\\mathrm{slpm}$ , $\\mathrm{H}_2 = 0.2\\mathrm{slpm}$ , $\\mathrm{TMG} = 0.248\\mathrm{scm}$ .","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_9","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_9","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":589,"height":456,"image_format":"jpeg","image_sha256":"662deaa67d76ba55660584fb61c21abdd87738661add9174a601103b36ba1174","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":4,"width":582,"height":454}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This graph shows the growth rate profile for the same reactor as similar figure in this work but under Case II conditions with lower flow, where diffusion dominates transport. The simulation matches very closely with the experimental data across the full wafer radius. This agreement demonstrates the model’s strong accuracy in diffusion-controlled regimes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Radius (cm) | Growth Rate (cm/hr) | Study Type |\\n|---|---|---|\\n| 0.0 | -- | Numerical (present study) |\\n| 0.0 | 2.3 | Experimental |\\n| 0.5 | 1.7 | Numerical (present study) |\\n| 0.5 | 2.2 | Experimental |\\n| 1.0 | 1.76 | Numerical (present study) |\\n| 1.0 | 1.78 | Experimental |\\n| 1.5 | 1.69 | Numerical (present study) |\\n| 1.5 | 1.8 | Experimental |\\n| 2.0 | 1.58 | Numerical (present study) |\\n| 2.0 | 1.8 | Experimental |\\n| 2.5 | 1.47 | Numerical (present study) |\\n| 2.5 | 1.9 | Experimental |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The key change is a large reduction in the carrier gas (H₂) flow rate. Lower flow decreases convective velocity, reducing the Reynolds number and shifting dominance from convection to diffusion. This allows precursors more time to diffuse radially across the wafer, smoothing out concentration gradients and producing a uniform growth rate profile, as shown in Case II.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The diffusion-dominated regime (Case II) is preferable for superior uniformity. The flatter intrinsic profile minimizes center-to-edge variation. The primary trade-off is a lower overall growth rate and potentially poorer precursor vapor-phase mixing, which could lead to compositional non-uniformities in ternary alloys and reduced reactor throughput due to the slower deposition.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The profile here is significantly flatter and more uniform than the center-high, edge-low profile of Case I. Under diffusion-dominated transport, precursor redistribution is governed by Fick's Law, which drives species from high-concentration regions (above the center) toward low-concentration regions (above the edges). This natural smoothing effect reduces radial gradients, leading to the nearly uniform growth rate observed across the wafer radius.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the model's proven accuracy under diffusion-limited conditions means it can reliably predict how changes in reactor geometry, pressure, or flow will affect the uniformity-critical transport pathways. Engineers can use it to optimize a new reactor's design specifically for uniform precursor diffusion, confidently trading off some convective speed to achieve the target thickness uniformity.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_34_figure_7.jpg","caption":"Figure 7. Two-point probe resistance measurement of Pt ALD-graphene contacts, Pt ALD growth was initiated by a $7\\min \\mathrm{H}_{2}$ plasma treatment. The resistance is averaged over six devices and divided by a correction factor $C$ , which takes into account the increase in the contact area with increasing ring size. Fitting Equation (3), the contact resistance is determined to be $0.5\\pm 0.2\\mathrm{k}\\Omega$ .","id":"test/atomic-layer-deposition/simulation-usecase/34/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/34/figure_7","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":667,"height":500,"image_format":"jpeg","image_sha256":"bd58daa8f1017c970dbeab903eb44509d6822621aac7bda4aaacb2a7e2a6cc36","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":667,"height":500}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows a linear relationship between the gap size (in µm) and the resistance (corrected for contact area) in Ω.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gap Size d (µm) | Rtot/C (Ω) |\\n|---|---|\\n| 0 | 0 |\\n| 5 | 20 |\\n| 10 | 40 |\\n| 15 | 50 |\\n| 17.5 | 70 |\\n| 22.5 | 80 |\\n| 25 | 90 |\\n| 35 | 120 |\\n| 40 | 150 |\\n| 47.5 | 170 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"7 minutes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.5 ± 0.2 kΩ µm, which is at the intercept of the vertical axis.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 150 Ω.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It increases linearly with a slope of about 1.01 ± 0.02 kΩ µm^-1.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_40_fig_6.jpg","caption":"Fig. 6. Process efficiency as a function of the time required to perform 100 ALD cycles in the case of $\\mathrm{ZnO}$ deposition by SALD.","id":"test/atomic-layer-deposition/simulation-usecase/40/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/40/fig_6","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/Viet Huong Nguyen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":605,"height":547,"image_format":"jpeg","image_sha256":"582993bb84354e3279e96a09317139dc5af6497c332ecad21958fc0a0ca13747","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":605,"height":547}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents the relationship between deposition efficiency (η₍dep₎) and the time required to complete 100 SALD cycles for ZnO deposition at different DEZ flow rates (15, 30, and 50 sccm). The data reveal a trade-off between throughput and efficiency, with 30 sccm providing the highest efficiency at moderate cycle times, while lower and higher flow rates lead to reduced efficiency due to under- or over-supply of precursor.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| DEZ Flow Rate (sccm) | Time for 100 ALD cycles (s) | Deposition efficiency (η_dep) |\\n|---------------------|----------------------------|-------------------------------|\\n| 15 | 45 | 0.045 |\\n| 15 | 55 | 0.048 |\\n| 15 | 65 | 0.050 |\\n| 15 | 80 | 0.043 |\\n| 15 | 90 | 0.037 |\\n| 30 | 30 | 0.052 |\\n| 30 | 35 | 0.054 |\\n| 30 | 40 | 0.055 |\\n| 30 | 45 | 0.053 |\\n| 30 | 50 | 0.050 |\\n| 50 | 30 | 0.047 |\\n| 50 | 35 | 0.045 |\\n| 50 | 40 | 0.043 |\\n| 50 | 45 | 0.038 |\\n| 50 | 50 | 0.036 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This figure enables identification of an optimal operating window where deposition efficiency is maximized without sacrificing throughput. The results indicate that intermediate DEZ flow rates (e.g., 30 sccm) balance sufficient precursor supply with minimal gas-phase loss, allowing faster processing while maintaining high efficiency. Such optimization is critical for scaling SALD processes to high-throughput manufacturing of ZnO films in applications like transparent electronics and sensors.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"DEZ precursor flow rate (15, 30, 50 sccm), Time required for 100 SALD cycles, Precursor utilization efficiency, Gas–surface interaction dynamics\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"30 sccm DEZ shows the highest deposition efficiency (~0.055) at intermediate cycle times (~35–50 s).\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_12_fig2.jpg","caption":"FIG.2. Saturation curves for (a) $\\mathrm{SF}_6$ plasma exposure using a $0.5s$ TMA dose, (b) the pump step following $\\mathrm{SF}_6$ plasma exposure, (c) TMA dosing using a $5s$ $\\mathrm{SF}_6$ plasma exposure, and (d) the pump step following $\\mathrm{SF}_6$ TMA dose. All experiments were conducted at a substrate temperature of $260^{\\circ}C$ with $10s$ TMA hold steps. The dashed lines are guides to the eye.","id":"test/atomic-layer-etching/experimental-usecase/12/fig2","sample_id":"atomic-layer-etching/experimental-usecase/12/fig2","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"},{"panel_id":"d","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/images/fig2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":683,"height":745,"image_format":"jpeg","image_sha256":"282f63a976d7ce9cf90149fa5b7a986aa6289d45e82ebe9f1faf1aa16105f66f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":0,"width":322,"height":371},{"panel_id":"b","x":358,"y":0,"width":324,"height":369},{"panel_id":"c","x":9,"y":384,"width":321,"height":361},{"panel_id":"d","x":363,"y":384,"width":319,"height":359}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"EPC increases rapidly with SF₆ plasma exposure time and saturates at ≈3.4 Å after ~5s for a 0.5s TMA dose at 260 °C. The auto summary did not identify the saturation threshold or the self-limiting nature of the plasma step. The manual summary clarifies the time required to reach full fluorination.\"},{\"panel_id\":\"b\",\"text\":\"EPC remains constant at ≈3.1–3.3 Å across the full plasma pump-time range following SF₆ exposure. The auto summary described only a generic dependence, whereas the manual version highlights that pump time does not influence EPC once saturation is reached.\"},{\"panel_id\":\"c\",\"text\":\"EPC shows a sharp onset between 0.2 and 0.4 s TMA dosing and saturates near ≈3.3 Å for a fixed 5s SF₆ plasma exposure. The auto summary missed this threshold behavior and the implication of a self-limiting ligand-exchange step. The manual summary explicitly identifies the dosing time required for saturation.\"},{\"panel_id\":\"d\",\"text\":\"EPC is insensitive to TMA pump time and remains at ≈3.2–3.3 Å across all values shown. The auto summary implied a dependence without interpretation. The manual summary clarifies that the reaction completes during dosing and does not require extended pumping.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| SF plasma time (s) | EPC (Å) |\\n|---|---|\\n| 0 | 0 |\\n| 5 | 2 |\\n| 10 | 3 |\\n| 15 | 3 |\\n| 20 | 3 |\\n| 25 | 3 |\\n| 30 | 3 |\"},{\"panel_id\":\"b\",\"text\":\"| Plasma pump time (s) | EPC (Å) |\\n|---|---|\\n| 10 | 2.9 |\\n| 20 | 3 |\\n| 30 | 3 |\"},{\"panel_id\":\"c\",\"text\":\"| TMA dosing time (s) | EPC (Å) |\\n|---|---|\\n| 0 | 0 |\\n| 0.1 | -0.1 |\\n| 0.2 | 0 |\\n| 0.4 | 2 |\\n| 0.6 | 3 |\\n| 0.8 | 3 |\"},{\"panel_id\":\"d\",\"text\":\"| TMA pump time (s) | EPC (Å) |\\n|---|---|\\n| 5 | 3.25 |\\n| 10 | 3 |\\n| 30 | 3 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 0.3 s.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At this dose time there is a negative EPC indicating that there is deposition of aluminum.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"≥0.4 s\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It reveals that a minimum coverage of surface fluorine species (from SF₆ plasma) must be present before TMA can effectively react and release volatile etch products.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TMA dose saturates quickly for doses longer than 0.3 s. Doses shorter than 0.2 s were found to cause a negligible thickness change, which is likely related to the consumption of TMA by AlF3 deposition on the reactor walls (100 °C) that are at a lower temperature than the substrate holder (300 \\u0002C). Previous work has shown that AlF3 ALD using SF6 plasma and TMA readily occurs at low temperatures. It is, therefore, likely that a significant amount of dosed TMA is adsorbed on the reactor walls before it can reach the substrate\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3.1 Å.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 0.2 s (based on the EPC crossing from negative to positive).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At about ~0.3 s TMA dose. It is clearly saturated by ~0.4–0.5 s\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10 s.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process would be 5-5-0.5-5.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The initial decrease suggests that some active TMA molecules are pumped away before reacting if the purge is too short. Therefore, the optimal pump time is just beyond the dip (~10-15s), where EPC stabilizes. This maximizes precursor utilization by allowing sufficient reaction time while minimizing waste and cycle time, which is critical for cost-effective high-volume production.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The measured EPC is higher than the literature results reported for thermal ALE of Al2O3 with HF/TMA at a comparable temperature.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes, the saturation of EPC in Figure 2 indicate self-limiting surface reactions characteristic of ALE.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"EPC increases with both SF₆ plasma exposure time and TMA dosing time until a saturation level is reached, indicating self-limiting surface reactions. In contrast, EPC shows little dependence on plasma pump time or TMA pump time.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows the etching per cycle as a function of plasma and precursor dose time.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SF6.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The saturated time is already around 5s, however the process soft-saturates.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"5 s\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The experimentally determined Etch Per Cycle (EPC) is approximately 3.1 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~2 seconds (the EPC saturates after the initial sharp rise between 0-2s).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, similar to the modification steps observed for many other ALE processes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"260 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the film is exposed to SF6 plasma, the formed fluorine radicals react quickly with surface Al2O3 molecules to form AlF3. This AlF3 then acts as a protective layer, which inhibits the remaining fluorine radicals from reacting with Al2O3 below the AlF3 film. However, this AlF3 does not completely prevent the fluorine radicals from reaching the lower layers of Al2O3, so more AlF3 gets formed as the exposure time of SF6 increases. After about 3 seconds, this reaction does become diffusion-limited, which explains the observed change.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The initial fast increase comes from rapid fluorination of the surface. As the fluorinated layer thickens, additional fluorination becomes harder because reactants must penetrate through this layer. The fluorinated layer therefore acts as a diffusion barrier, leading to a slower EPC increase.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around ~5 s.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure demonstrates that both SF6 plasma exposure and TMA dosing exhibit self-limiting behavior, typical of ALE processes. For SF6 plasma, the EPC rapidly increases for short exposure times and saturates around 5 s, indicating full surface fluorination. For TMA, EPC saturates after ~0.3–0.5 s, reflecting complete adsorption on the fluorinated surface. Pump steps of 10 s between half-cycles are sufficient to prevent parasitic reactions, ensuring that etching occurs only when alternating plasma and TMA doses are applied. Overall, the curves confirm the controlled, self-limiting nature of the plasma ALE process.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SF₆ plasma exposure and TMA dosing.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both subfigure b and d show that 5 s is sufficient purge time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Neither; EPC remains constant at ≈3.3 Å.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Plasma exposure time is critical; EPC rises sharply until saturation at ~2s, indicating the time needed for surface fluorination. In contrast, plasma pump time has minimal effect after ~10s, suggesting that reactant removal is not rate-limiting. The trade-off is that precise control of the active plasma step is essential for consistent etching, while the purge step offers a wider, more forgiving time window, allowing for throughput optimization without sacrificing etch rate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A minimum plasma pump steps of 10 s are sufficient to avoid a parasitic etching component\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10 s.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SF₆ plasma exposure time, TMA dosing time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"EPC increases rapidly at short SF6 plasma exposure times and then saturates at ~3 Å/cycle, TMA dosing exhibits quick saturation above ~0.3 s, with little additional growth for longer doses, Pump steps (both after plasma and TMA) show no significant change in EPC after 10 s, confirming removal of excess reactants, The self-limiting behavior is consistent for both plasma and TMA, ensuring precise etching per cycle\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_4.jpg","caption":"Figure 4. Temperature dependence of AlN ALE with HF and $\\mathrm{BCl}_3$ as the reactants as measured by the change in integrated absorbance per cycle at 200, 250, 300, and $350^{\\circ}\\mathrm{C}$ . The integrated absorbance was measured from 400 to $1000\\mathrm{cm}^{-1}$","id":"test/atomic-layer-etching/experimental-usecase/20/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_4","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":658,"height":500,"image_format":"jpeg","image_sha256":"18339f82d20902ddebfb02373f97e45687ff17fe256c834ba330d3aa418e9a3c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":655,"height":493}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between temperature and the change in absorption intensity per cycle at 200 °C, 250 °C, 300 °C and 350 °C. As temperature increases, there is a negative trend in the change in absorption intensity.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Δ Int. Abs./ Cycle (cm⁻¹) |\\n|-----------------|--------------------------|\\n| 200 | 0 |\\n| 250 | -1.5 |\\n| 300 | -2.2 |\\n| 350 | -3.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"With this figure it is possible to see the temperature dependence of the AlN cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the temperature increases, higher absorbance changes and higher etching rates are observed.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 350 °C\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This means that there is negligible AlN etching.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_9.jpg","caption":"Figure 9. Etch rate changes during AlN ALE vs $\\mathrm{BCl}_3$ exposure at 255 $^\\circ \\mathrm{C}$ using an $\\mathrm{XeF}_2$ exposure of 0.060 Torr s.","id":"test/atomic-layer-etching/experimental-usecase/20/figure_9","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_9","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":661,"height":517,"image_format":"jpeg","image_sha256":"33ed721febee3e0aa7437fd16f291cf341930b9ea9d6b0f78704cae6a07a5c3f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":656,"height":513}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between BCl₃ exposure time (in Torr·s) and etch rate (in Å/cycle) at a constant temperature of 255°C and with a constant pressure of 0.060 Torr s of XeF₂, and varying BCl₃ pressure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| BCl₃ Exposure (Torr·s) | Etch Rate (Å/cycle) |\\n| --- | --- |\\n| 0 | 0.40 |\\n| 50 | 0.65 |\\n| 100 | 0.80 |\\n| 150 | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The experiment was conducted at a temperature of 255 °C and a pressure of 0.060 Torr s of XeF2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As BCl3 exposure increases, so does the etch rate, rising from 0.4 to 0.8 Å/cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At approximately 50 Torr s.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_10.jpg","caption":"Figure 10. Arrhenius plot of temperature-dependent etch rates for $\\mathrm{WO}_3$ ALE. Slope of the Arrhenius plot yields an activation barrier of $8.6\\mathrm{kcal / mol}$ .","id":"test/atomic-layer-etching/experimental-usecase/25/figure_10","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_10","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":670,"height":570,"image_format":"jpeg","image_sha256":"148214790a55dca57c3e1346c32a480176df572b039c7a0a8fba1b7c4d3a2515","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":8,"width":655,"height":558}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the logarithmic relationship between the inverse temperature (1000/T) and the etch rate of WO₃, which is called an Arrhenius plot.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 1000/T (K⁻¹) | ln [WO₃ Etch Rate (Å/cycle)] |\\n|---|---|\\n| 2.1 | 1.4 |\\n| 2.2 | 0.9 |\\n| 2.3 | 0.5 |\\n| 2.4 | 0.1 |\\n| 2.5 | -0.3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The slope gives information regarding the activation energy. For the reaction to occur.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes there is an uncertainty. This is mainly caused by the fact that not all datapoints are precisely located on the line.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A negative value on this y-axis represents an etch rate that is smaller than 1 angstrom per cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The temperature is a probe of the kinetic energy reactants help. Usually a reaction requires an activation energy and by providing a certain temperature, the kinetic energy will increase leading to the reaction to occur.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_11.jpg","caption":"Figure 11. W thickness versus number of cycles during W ALE at 207 $^\\circ \\mathrm{C}$ using $\\mathrm{O}_2 / \\mathrm{O}_3$ , $\\mathrm{BCl}_3$ , and HF as reactants. Etch rate during W ALE is $2.56\\mathrm{\\AA} / \\mathrm{cycle}$ .","id":"test/atomic-layer-etching/experimental-usecase/25/figure_11","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_11","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":672,"height":558,"image_format":"jpeg","image_sha256":"1f356e7364dd1230a347871ec3d444980dbbf9fe58552a03a2e0517a255efce0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":669,"height":551}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A line chart showing the decrease in W thickness (Å) as the number of cycles increases, with a slope of 2.56.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | W Thickness (Å) |\\n|------------------|-----------------|\\n| 20 | 263 |\\n| 30 | 239 |\\n| 40 | 210 |\\n| 50 | 183 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"207 degrees Celcius\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After the 50 cycles, around 185 angstrom is still present, the EPC is 2.56 angstrom per cycle, so still around 70 cycles are required.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"225 angstrom.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The EPC is 0.256 nm/cycle and this does relate to ALE as the etch per cycle is not too high.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_14.jpg","caption":"Figure 14. W etch rate versus $\\mathrm{O}_2 / \\mathrm{O}_3$ exposure during W ALE at $207^{\\circ}\\mathrm{C}$ . $\\mathrm{BCl}_3$ and HF exposures were held at 500 and 2800 mTorr s, respectively.","id":"test/atomic-layer-etching/experimental-usecase/25/figure_14","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_14","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_14.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":670,"height":556,"image_format":"jpeg","image_sha256":"cd32800c523792d16f82286d5522ac5c84a8187c8104294cc4e5f595d2c9d941","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":1,"width":663,"height":554}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between oxygen/ozone exposure (in mTorr s) and the etch rate of tungsten (W) in angstrom per cycle. The etch rate increases with increasing exposure up to 3000 mTorr s, after which it plateaus.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| O₂/O₃ Exposure (mTorr s) | W Etch Rate (Å/cycle) |\\n|---|---|\\n| 0 | 0.0 |\\n| 1000 | 0.7 |\\n| 2000 | 1.9 |\\n| 3000 | 2.4 |\\n| 4000 | 2.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The feature that is visible is self-limiting. This is visible by the formation of a plateau after 3000 mTorr s.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2.4 angstrom per cycle\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As O3 is usually more reactive than O2, a higher fraction of O3 is likely to result in a decrease in required exposure time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_15.jpg","caption":"Figure 15. W etch rate versus reactant exposure during W ALE. (a) $\\mathrm{BCl}_3$ exposure was varied with HF and $\\mathrm{O}_2 / \\mathrm{O}_3$ exposures held at 2800 and $3150~\\mathrm{mTorr}$ s, respectively. (b) HF exposure was varied with $\\mathrm{BCl}_3$ and $\\mathrm{O}_2 / \\mathrm{O}_3$ exposures held at 500 and $3150~\\mathrm{mTorr}$ s, respectively.","id":"test/atomic-layer-etching/experimental-usecase/25/figure_15","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_15","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_15.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":647,"height":1073,"image_format":"jpeg","image_sha256":"e42cbf1cada2777832cf7f632214b6404e0b7c64120e5f0aa626860f423234e3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":636,"height":532},{"panel_id":"b","x":1,"y":533,"width":643,"height":536}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch rate of W increases with increasing BCl₃ exposure at a constant temperature of 207°C, and constant HF and O2/O3 exposures.\"},{\"panel_id\":\"b\",\"text\":\"The etch rate of W increases with increasing HF exposure at a constant temperature of 207°C, and constant BCl3 and O2/O3 exposures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| BCl₃ Exposure (mTorr s) | W Etch Rate (Å/cycle) |\\n|---|---|\\n| 0 | 0.0 |\\n| 200 | 2.2 |\\n| 300 | 2.4 |\\n| 500 | 2.4 |\"},{\"panel_id\":\"b\",\"text\":\"| HF Exposure (mTorr s) | W Etch Rate (Å/cycle) |\\n|---|---|\\n| 0 | 0.0 |\\n| 1000 | 1.8 |\\n| 2000 | 2.4 |\\n| 3000 | 2.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If this is not the case the, the outcome of the BCl3 exposure sweep will not represent the highest achievable etch rate. In addition, it will not represent ALE, as the reactions have not been performed till saturation is achieved.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.5 angstrom per cycle\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"2.5 angstrom per cycle, and this does correspond to the other achieved EPCs.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that temperature has an influence on the etch per cycle which might interfere with the results achieved by changing the HF exposure.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_16.jpg","caption":"Figure 16. $\\mathrm{WO}_3$ thickness versus number of $\\mathrm{O}_2 / \\mathrm{O}_3$ exposures for initial W ALD film. Each $\\mathrm{O}_2 / \\mathrm{O}_3$ exposure was 70 mTorr for $45\\mathrm{~s~}$","id":"test/atomic-layer-etching/experimental-usecase/25/figure_16","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_16","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_16.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":670,"height":550,"image_format":"jpeg","image_sha256":"9025016d377ffeed455d2379654c06f855485fe2a53fef80e3c82f009e00b519","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":1,"width":662,"height":547}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The graph shows the thickness of WO₃ as a function of the number of O₂/O₃ exposures at 207°C, where the thickness increases for increasing number of exposures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of O₂/O₃ Exposures | WO₃ Thickness (Å) |\\n|---|---|\\n| 0 | 33 |\\n| 1 | 33 |\\n| 2 | 33 |\\n| 3 | 35 |\\n| 4 | 37 |\\n| 5 | 42 |\\n| 6 | 45 |\\n| 8 | 49 |\\n| 10 | 52 |\\n| 12 | 55 |\\n| 16 | 59 |\\n| 20 | 61 |\\n| 24 | 62 |\\n| 28 | 63 |\\n| 32 | 64 |\\n| 34 | 65 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1 up until 3 exposures\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The is no perfect saturation achieved for ever increasing number of exposures, but a linear line is observed. This is usually referred to as soft-saturation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Underlayin tungsten (W).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"28 angstrom\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_17.jpg","caption":"Figure 17. $\\mathrm{WO}_3$ removal after W ALE using $\\mathrm{BCl}_3$ and HF as reactants. (a) $\\mathrm{WO}_3$ thickness versus number of cycles showing reduction of $\\mathrm{WO}_3$ thickness to limiting value of $\\sim 3\\mathrm{\\AA}$ . (b) W thickness versus number of cycles showing that W thickness remains nearly constant during $\\mathrm{WO}_3$ removal.","id":"test/atomic-layer-etching/experimental-usecase/25/figure_17","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_17","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_17.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_17.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":669,"height":891,"image_format":"jpeg","image_sha256":"ca193ef1d48f1405b159d1896e5ea230bac41fde70aee21bb3314872129e6721","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":661,"height":414},{"panel_id":"b","x":6,"y":432,"width":659,"height":454}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The thickness of WO₃ decreases rapidly at first and then plateaus for increasing number of cycles.\"},{\"panel_id\":\"b\",\"text\":\"The thickness of W remains relatively constant for increasing number of cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | WO₃ Thickness (Å) |\\n|---|---|\\n| 0 | 20 |\\n| 3 | 14 |\\n| 6 | 7 |\\n| 12 | 4 |\\n| 18 | 4 |\\n| 24 | 3 |\\n| 30 | 3 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Cycles | W Thickness (Å) |\\n|---|---|\\n| 0 | 219 |\\n| 3 | 217 |\\n| 6 | 217 |\\n| 12 | 216 |\\n| 18 | 216 |\\n| 24 | 215 |\\n| 30 | 215 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3 angstrom\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the etching of W, it must first be modified into WO3. As this process does not contain a O2/O3 step, this does not happen.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process is selective. Only WO3 is etched whereas W is unharmed. This means the process is selective towards WO3 w.r.t. W.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"None\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_3.jpg","caption":"Figure 3. $\\mathrm{WO}_3$ thickness versus number of cycles showing $\\mathrm{WO}_3$ ALE at $207^{\\circ}\\mathrm{C}$ using $\\mathrm{BCl}_3$ and HF as reactants. W film under $\\mathrm{WO}_3$ layer acts as an etch stop.","id":"test/atomic-layer-etching/experimental-usecase/25/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_3","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":672,"height":550,"image_format":"jpeg","image_sha256":"2d6241cacf354d8bc02d2e9e2651ca695e1ea372aad27ffd5b48490afcdc1591","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":665,"height":545}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the linear decrease in thickness of WO₃ with increasing number of cycles at 207°C. The text annotations indicate that W acts as an etch stop.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | WO₃ Thickness (Å) |\\n|---|---|\\n| 0 | 150 |\\n| 5 | 120 |\\n| 10 | 100 |\\n| 15 | 75 |\\n| 20 | 50 |\\n| 25 | 30 |\\n| 30 | 10 |\\n| 35 | 10 |\\n| 40 | 10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate can be determined by calculating the slope, which gives a value around 5 angstrom per cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process without O2/O3 exposure is selective for WO3 w.r.t. W, so there is no etching of W.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"15 nm.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes there will be, tungsten will oxidize after exposure to ambient so there will be a thin layer of WO3 at the surface.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_4.jpg","caption":"Figure 4. $\\mathrm{WO}_3$ thickness versus number of cycles showing $\\mathrm{WO}_3$ ALE at $207^{\\circ}\\mathrm{C}$ using $\\mathrm{BCl}_3$ and HF as reactants. Etch rate during $\\mathrm{WO}_3$ ALE is $4.18\\mathrm{\\AA}$ /cycle.","id":"test/atomic-layer-etching/experimental-usecase/25/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_4","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":673,"height":547,"image_format":"jpeg","image_sha256":"ebe7bf428c9af2a26875be99a56d5105a444373512ee0e1684c6f2443b6b5cea","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":667,"height":541}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the decrease in thickness of WO₃ with increasing number of cycles at 207°C. The etch rate is calculated as 4.18 Å/cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | WO₃ Thickness (Å) |\\n|---|---|\\n| 10 | 135 |\\n| 15 | 110 |\\n| 20 | 85 |\\n| 25 | 60 |\\n| 30 | 50 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The slope of the line is equal to the etch rate, which is 4.18 angstrom/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"85 angstrom.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Etch rate entails that is a thickness over a time unit that is removed, usually a cycle is seen as this timeunit. However, this does not always hold.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Still between 10 and 15 cycles\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_37_fig_3.jpg","caption":"FIG. 3. Growth per cycle (GPC) of $\\mathrm{TiO_2}$ thin films deposited on Si-OH surface measured by in situ ellipsometry. One of the precursor dosing times is held constant at $300\\mathrm{ms}$ while the dosing time of (a) $\\mathrm{TiCl_4}$ and (b) $\\mathrm{H}_2\\mathrm{O}$ is varied.","id":"test/atomic-layer-etching/experimental-usecase/37/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/37/fig_3","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/Effect of reactant dosing on selectivity during area-selective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":1091,"image_format":"jpeg","image_sha256":"b11943e7dba153b820183e93fe05c73702087a4cf25f6e961c46acc0b39acbe0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":667,"height":550},{"panel_id":"b","x":1,"y":551,"width":667,"height":535}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The growth per cycle remains constant at approximately 0.05 nm/cycle across various TiCl4 doses ranging from 0 ms to 350 ms.\"},{\"panel_id\":\"b\",\"text\":\"The growth per cycle remains constant at approximately 0.05 nm/cycle across various H2O doses ranging from 0 ms to 350 ms.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TiCl4 dose (ms) | Growth per cycle (nm/cycle) |\\n|---|---|\\n| 0 | 0.00 |\\n| 50 | 0.05 |\\n| 100 | 0.05 |\\n| 150 | 0.05 |\\n| 200 | 0.05 |\\n| 250 | 0.05 |\\n| 300 | 0.05 |\\n| 350 | 0.05 |\"},{\"panel_id\":\"b\",\"text\":\"| H2O Dose (ms) | Growth per cycle (nm/cycle) |\\n|---|---|\\n| 0 | 0.00 |\\n| 50 | 0.04 |\\n| 100 | 0.05 |\\n| 150 | 0.05 |\\n| 200 | 0.05 |\\n| 250 | 0.05 |\\n| 300 | 0.05 |\\n| 350 | 0.05 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"170 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.05 nm/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The GPC as a function of TiO2 exposure plateaus at 0.05 nm/cycle after 50 ms of exposure time. The same is observed for the water exposure after about 150 ms. After these points, the growth per cycle is no longer dependent on exposure time, indicating self-limiting growth. This means that this process meets the requirement of ALD.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.05 nm/cycle.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_44_fig_4.jpg","caption":"FIG. 4. (Color online) Film thickness vs number of AlN ALE reaction cycles at $275^{\\circ}\\mathrm{C}$ in pure AlN region of AlN film. Change of thickness vs number of AlN ALE reaction cycles gives an etch rate of $0.38\\mathrm{\\AA}$ /cycle.","id":"test/atomic-layer-etching/experimental-usecase/44/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/44/fig_4","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/Thermal atomic layer etching of crystalline aluminum nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":606,"height":480,"image_format":"jpeg","image_sha256":"9637ec1086968b26886134527ef7ce44a099607a119c2b79e426ac34dc02b085","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":598,"height":475}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the thickness of an aluminum nitride (AlN) film as a function of the number of Atomic Layer Etching (ALE) reaction cycles at 275 °C, specifically in the pure AlN region of the film. From the linear change in thickness with cycle count, an average etch rate of 0.38 Å/cycle is determined. The number of cycles were taken from 472 to 492.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle Number | Thickness (Å) |\\n|---|---|\\n| 472 | 412 |\\n| 474 | 411 |\\n| 476 | 410 |\\n| 478 | 409 |\\n| 480 | 408 |\\n| 482 | 407 |\\n| 484 | 407 |\\n| 486 | 406 |\\n| 488 | 405 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"HF exposure: Fluorinates the surface to form an AlF₃ layer.\\n\\nSn(acac)₂ exposure: Performs a ligand-exchange reaction to volatilize the fluorinated layer.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The trade-off is between process efficiency and surface preparation. The pure AlN etches efficiently, but the unavoidable native oxide acts as a \\\"slow-etch barrier.\\\" This forces a choice: accept a long, non-productive overetch to clear the oxide, or add a separate pre-cleaning step to remove it, adding complexity to the process flow.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Its high thermodynamic stability (sublimation point 1291°C), which allows it to remain as a solid, well-defined surface layer for the Sn(acac)₂ to react with.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The four-center transition state ensures the reaction is highly specific and occurs only at the immediate interface between the Sn(acac)₂ precursor and the solid AlF₃ surface layer. This localized, surface-limited reaction prevents spontaneous gas-phase decomposition or bulk etching. Consequently, the etch process is intrinsically self-limiting, removing exactly one reacted layer per cycle and enabling atomic-scale depth control critical for nanofabrication.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG8_a.jpg","caption":"FIG. 8. (a) $R_{\\mathrm{q}}$ of molybdenum films as a function of the number of ALE cycles at $300^{\\circ}\\mathrm{C}$ as measured by AFM. AFM images of (b) an unetched film with a thickness of around $55\\mathrm{nm}$ and (c) a film etched for 200 cycles, with a remaining thickness of $41.6\\mathrm{nm}$ .","id":"test/atomic-layer-etching/experimental-usecase/47/FIG8_a","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG8_a","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG8_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG8_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":678,"height":509,"image_format":"jpeg","image_sha256":"db11c50f028e2070658cc258c7c5482a4b26fa17a268d17763cd513b5e692a2d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":664,"height":570}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image plots number of ALE cycles and the surface roughness.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| no. cycles | Rq (nm) |\\n|---|---|\\n| 0 | 3.2 |\\n| 50 | 3.5 |\\n| 100 | 3.6 |\\n| 200 | 4.2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"AFM was used to study the film morphology before and after partial etching at 300 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A slight increase of the roughness was seen. The average Rq of the unetched films was 3.3 nm, and for the film etched for 200 cycles, i.e., 21 nm in thickness, the average Rq was 4.3 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, we need the AFM images with 2D/3D contour plot to evaluate the grain boundaries and morphology more precisely\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_18_fig7.jpg","caption":"FIG.7. (a) Scatter plot for Hf-F coverage vs total HF coverage for the surface coverage values in Table III. Plots (b) and (c) show the change in binding energy per square nanometer with an increase in HF and Hf-F coverage, respectively.","id":"test/atomic-layer-etching/simulation-usecase/18/fig7","sample_id":"atomic-layer-etching/simulation-usecase/18/fig7","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/Origin of enhanced thermal atomic layer etching of amorphous HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":1009,"height":372,"image_format":"jpeg","image_sha256":"8a351b2c4fba36f8a8263e32a7bb144a62b34095bc932f3fde332426303b17b4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":11,"width":326,"height":361},{"panel_id":"b","x":361,"y":14,"width":314,"height":357},{"panel_id":"c","x":694,"y":14,"width":313,"height":357}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a scatter plot with points representing the relationship between coverage of HF per nm² and Hf-F per nm². The coverage of Hf-f increases as well as the coverage of Hf.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays a scatter plot with points indicating the binding energy (E_bind) in eV/nm² against the coverage of HF per nm². Energy decreases as the coverage increases.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows a scatter plot with points representing the binding energy (E_bind) in eV/nm² against the coverage of Hf-F per nm². Energy decreases as the coverage increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Coverage [HF/nm²] | Coverage [Hf-F/nm²] |\\n|---|---|\\n| 0 | 0 |\\n| 5 | 4 |\\n| 10 | 6.5 |\\n| 15 | 7 |\\n| 20 | 9 |\"},{\"panel_id\":\"b\",\"text\":\"| Coverage [HF/nm²] | E_bind [eV/nm²] |\\n|---|---|\\n| 0 | -1 |\\n| 5 | -10 |\\n| 10 | -15 |\\n| 15 | -18 |\\n| 20 | -21 |\"},{\"panel_id\":\"c\",\"text\":\"| Coverage [HF/nm²] | E_bind [eV/nm²] |\\n|---|---|\\n| 0 | -2 |\\n| 2 | -4 |\\n| 4 | -10 |\\n| 6 | -18 |\\n| 8 | -20 |\\n| 10 | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the subfigure a, the HF coverage resulted in a complete dissociation. This lay along the correlation line.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is possible to observe a plateau close to 9.0 Hf-F/nm.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the HF coverage increases from 0 to 20 HF/nm2, the binding energy decreases to more negative values.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_15.jpg","caption":"Figure 15. Experimental etch rates for the thermal ALE of $\\mathrm{HfO_2}$ and $\\mathrm{ZrO_2}$ using precursors HF and $\\mathrm{Sn(acac)}_2,^{4,9}\\mathrm{Al(CH_3)_3,^{4}AlCl(CH_3)_2,^{4,12}}$ $\\mathrm{SiCl_4}^4$ and $\\mathrm{TiCl_4}$ 111 (a) Etch rates for the thermal ALE of $\\mathrm{HfO_2}$ using HF and $\\mathrm{Sn(acac)}_2$ for the temperature range of $150 - 250^{\\circ}C$ b) Etch rates for the thermal ALE of $\\mathrm{HfO_2}$ and $\\mathrm{ZrO_2}$ using HF and $\\mathrm{Sn(acac)}_2 / \\mathrm{AlCl(CH_3)_2 / Al(CH_3)_3 / SiCl_4}$ at the temperatures shown. (c) Etch rates for the thermal ALE using HF and $\\mathrm{TiCl_4}$ of $\\mathrm{HfO_2}$ for the temperature range $200 - 300^{\\circ}C$ and $\\mathrm{ZrO_2}$ at $250^{\\circ}C$ d) Etch rates for the thermal ALE of $\\mathrm{HfO_2}$ and $\\mathrm{ZrO_2}$ using HF and $\\mathrm{AlCl(CH_3)_2}$ for the temperature range $200 - 300^{\\circ}C$","id":"test/atomic-layer-etching/simulation-usecase/25/figure_15","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_15","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"scatter plot"},{"panel_id":"d","label":"scatter plot"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_15.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":867,"height":622,"image_format":"jpeg","image_sha256":"590a621dd1a1ccf79290c7e61618aec2532440dbec80dd8a9f20e212c6907ce5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":359,"height":306},{"panel_id":"b","x":363,"y":3,"width":496,"height":304},{"panel_id":"c","x":0,"y":311,"width":356,"height":309},{"panel_id":"d","x":352,"y":305,"width":512,"height":315}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Etch rate for thermal ALE of HfO₂ using HF + Sn(acac)₂ increases from ~0.07 Å/cycle at 150 °C to a maximum of ~0.125 Å/cycle at 225 °C, then drops slightly at 250 °C (~0.115 Å/cycle). The temperature response is weakly non-monotonic with a clear peak near 225 °C.\"},{\"panel_id\":\"b\",\"text\":\"Single-temperature comparisons across precursor pairs show a wide spread in etch rate. HF + AlCl(CH₃)₂ at 250 °C is highest in this panel (~0.75 Å/cycle for HfO₂; ~0.95 Å/cycle for ZrO₂), while HF + Sn(acac)₂ at 200 °C is much lower (~0.05 for HfO₂; ~0.15 for ZrO₂). HF + Al(CH₃)₃ at 300 °C (HfO₂ point shown) is ~0.10 Å/cycle, and HF + SiCl₄ at 350 °C ranges from ~0.05 (HfO₂) to ~0.15 Å/cycle (ZrO₂).\"},{\"panel_id\":\"c\",\"text\":\"With HF + TiCl₄, etch rate increases with temperature from ~0.10 Å/cycle at 200 °C to ~0.58 Å/cycle at 300 °C for HfO₂. At 250 °C, ZrO₂ (~0.38 Å/cycle) is higher than HfO₂ (~0.29 Å/cycle), indicating a material-dependent etch response under the same precursor condition.\"},{\"panel_id\":\"d\",\"text\":\"With HF + AlCl(CH₃)₂, etch rate increases from 200 to 300 °C for both oxides, and ZrO₂ is consistently higher than HfO₂ at each temperature. Approximate values rise from ~0.35→~1.25 Å/cycle for HfO₂ and ~0.90→~1.60 Å/cycle for ZrO₂ over 200→300 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Precursor | Material | Temperature (°C) | Etch Rate (Å/cycle) |\\n|-----------|----------|------------------|---------------------|\\n| Hf / Sn(acac)2 (Red) | HfO₂ | 150 | ~0.07 |\\n| Hf / Sn(acac)2 (Red) | HfO₂ | 175 | ~0.085 |\\n| Hf / Sn(acac)2 (Red) | HfO₂ | 200 | ~0.115 |\\n| Hf / Sn(acac)2 (Red) | HfO₂ | 225 | ~0.125 (max) |\\n| Hf / Sn(acac)2 (Red) | HfO₂ | 250 | ~0.115 |\"},{\"panel_id\":\"b\",\"text\":\"| Precursor | Material | Temperature (°C) | Etch Rate (Å/cycle) |\\n|-----------|----------|------------------|---------------------|\\n| Hf / Sn(acac)2 (Red) | HfO₂ | 200 | ~0.05 |\\n| Hf / Sn(acac)2 (Red) | ZrO₂ | 200 | ~0.15 |\\n| Hf / AlCl(CH₃)₂ (Green) | HfO₂ | 250 | ~0.75 | \\n| Hf / AlCl(CH₃)₂ (Green) | ZrO₂ | 250 | ~0.95 | \\n| Hf / Al(CH₃)₃ (Blue) | HfO₂ | 300 | ~0.10 | \\n| Hf/ SiCl₄ (Purple) | HfO₂ | 350 | ~0.05 |\\n| Hf / SiCl₄ (Purple) | ZrO₂ | 350 | ~0.15 |\"},{\"panel_id\":\"c\",\"text\":\"| Precursor | Material | Temperature (°C) | Etch Rate (Å/cycle) |\\n|-----------|----------|------------------|---------------------|\\n| Hf / TiCl₄ (Orange) | HfO₂ | 200 | ~0.10 |\\n| Hf / TiCl₄ (Orange) | HfO₂ | 225 | ~0.18 |\\n| Hf / TiCl₄ (Orange) | HfO₂ | 250 | ~0.29 |\\n| Hf / TiCl₄ (Orange) | ZrO₂ | 250 | ~0.38 |\\n| Hf / TiCl₄ (Orange) | HfO₂ | 275 | ~0.46 |\\n| Hf / TiCl₄ (Orange) | HfO₂ | 300 | ~0.58 |\"},{\"panel_id\":\"d\",\"text\":\"| Precursor | Material | Temperature (°C) | Etch Rate (Å/cycle) |\\n|-----------|----------|------------------|---------------------|\\n| Hf / AlCl(CH₃)₂ (Green) | HfO₂ | 200 | ~0.35 |\\n| Hf / AlCl(CH₃)₂ (Green) | ZrO₂ | 200 | ~0.90 | \\n| Hf / AlCl(CH₃)₂ (Green) | HfO₂ | 225 | ~0.80 | \\n| Hf / AlCl(CH₃)₂ (Green) | ZrO₂ | 225 | ~1.18 | \\n| Hf / AlCl(CH₃)₂ (Green) | HfO₂ | 250 | ~0.98 |\\n| Hf / AlCl(CH₃)₂ (Green) | ZrO₂ | 250 | ~1.35 | \\n| Hf / AlCl(CH₃)₂ (Green) | HfO₂ | 275 | ~1.10 |\\n| Hf / AlCl(CH₃)₂ (Green) | ZrO₂ | 275 | ~1.50 |\\n| Hf / AlCl(CH₃)₂ (Green) | HfO₂ | 300 | ~1.25 | \\n| Hf / AlCl(CH₃)₂ (Green) | ZrO₂ | 300 | ~1.60 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ZrO₂.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate of HfO₂ using HF + TiCl₄ increases steadily and monotonically as the temperature is raised from 200 °C to 300 °C. The rate roughly doubles from ~0.29 Å/cycle at 250 °C to ~0.58 Å/cycle at 300 °C, indicating a strong thermal dependence for this etch chemistry within the studied range.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The data show an etch-rate maximum near 225 °C rather than a steady increase with temperature. That suggests there’s an operating window where the surface chemistry yields the largest net removal per cycle under HF + Sn(acac)₂. Running below the peak likely underdrives one of the steps, while running above it appears to reduce net etching, consistent with a narrower optimum rather than a broad Arrhenius-like rise.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes; by roughly 0.20 Å/cycle (~0.95 vs ~0.75 Å/cycle).\"}]}]"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_15.jpg","caption":"FIG. 15. Surface coverage of Ti atoms as a function of the number of ALD cycles, as measured by a quartz crystal microbalance at room temperature (Ref. 232). The precursor employed was $\\mathrm{TiCl_4}$ and the reactant was an $\\mathrm{H}_{2}$ plasma. For deposition on the as-received crystal, the growth showed a linear trend after $\\sim 5$ cycles. Reprinted with permission from H. Kim et al., J. Vac. Sci. Technol. A 20, 802 (2002). Copyright 2002 American Vacuum Society.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_15","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_15","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a linear relationship between Ti atom surface coverage and the number of ALD cycles. The direct proportionality indicates a consistent growth rate per cycle, characteristic of self-limiting reactions in atomic layer deposition (ALD).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | Ti Atom Surface Coverage (×10¹⁵ /cm²) |\\n|------------------|---------------------------------------|\\n| 0 | 0 |\\n| 10 | 5 |\\n| 20 | 10 |\\n| 30 | 15 |\\n| 40 | 20 |\\n| 50 | 25 |\\n| 60 | 30 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ti atom surface coverage increases linearly with the number of ALD cycles, indicating a constant growth per cycle characteristic of ideal ALD behavior.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ti atom surface coverage (×10¹⁵/cm²).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Consistent growth rate per cycle, Self-limiting surface reactions, Stable precursor adsorption behavior\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":600,"height":511}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_15.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":600,"height":511,"image_format":"jpeg","image_sha256":"9eeda7167bca5985b4e09df0e493cc47e696b113600a26d3c61fd50ce6818070","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_19.jpg","caption":"FIG. 19. (Color online) Water vapor transmission rate (WVTR) of a $20 \\mathrm{nm}$ thick $\\mathrm{Al}_2\\mathrm{O}_3$ films on poly(2,6-ethylenenaphthalate) (PEN) substrates as a function of the deposition temperature (Ref. 54). The $\\mathrm{Al}_2\\mathrm{O}_3$ films were deposited by plasma-assisted ALD using $\\mathrm{AlMe}_3$ as the precursor and an $\\mathrm{O}_2$ plasma as the reactant. The inset shows the WVTR as a function of the film thickness for a film deposited at room temperature. The WVTR values were determined using a standard calcium test (Ref. 378) and include water permeation through pinholes which are possibly present. From E. Langereis et al., Appl. Phys. Lett. 89, 081915 (2006). Reprinted with permission. Copyright 2006, American Institute of Physics.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_19","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_19","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares the water vapor transmission rate (WVTR) as a function of deposition temperature for Al₂O₃ films, with an inset showing WVTR versus film thickness on PEN substrates. Increasing deposition temperature initially reduces WVTR due to improved film density but rises at higher temperatures. The inset reveals that increasing Al₂O₃ thickness significantly decreases WVTR, indicating enhanced barrier performance.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition temperature (°C) | WVTR (g m⁻² day⁻¹) |\\n|---|---|\\n| 20 | 0.008 |\\n| 30 | 0.009 |\\n| 40 | 0.01 |\\n| 50 | 0.011 |\\n| 60 | 0.012 |\\n| 70 | 0.013 |\\n| 80 | 0.014 |\\n| 90 | 0.015 |\\n| 100 | 0.016 |\"},{\"panel_id\":\"b\",\"text\":\"| Al₂O₃ thickness (nm) | WVTR (g m⁻² day⁻¹) |\\n|---|---|\\n| 0 | 0.4 |\\n| 10 | 0.01 |\\n| 20 | 0.02 |\\n| 30 | 0.03 |\\n| 40 | 0.04 |\\n| 50 | 0.05 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"WVTR (Water Vapor Transmission Rate) in g·m⁻²·day⁻¹\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Thicker Al₂O₃ improves barrier, WVTR drops to ~40 nm, Diminishing returns beyond\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"WVTR decreases with increasing film thickness due to improved barrier density, but shows a minimum at moderate deposition temperatures, rising again at higher temperatures due to potential defect formation.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":603,"height":451},{"panel_id":"b","x":122,"y":34,"width":302,"height":221}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_19.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_19.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":608,"height":456,"image_format":"jpeg","image_sha256":"530d21b8017f2057f5a4ea6d658d9c782869704da620531dc7929468e831e84b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_21_fig_2.jpg","caption":"Fig. 2 Saturation curves for (a) thermal and (b) plasma-assisted ALD of $\\mathrm{Li_2CO_3}$ obtained at $150^{\\circ}\\mathrm{C}$ showing the self-limiting growth behavior of the ALD process. The solid line serves as a guide to the eye. Dotted lines indicate the chosen standard values and the corresponding growth per cycle. Note that the reaction time of $\\mathrm{H}_2\\mathrm{O}$ after dosing was kept at $4\\mathrm{s}$ .","id":"test/atomic-layer-deposition/experimental-usecase/21/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/21/fig_2","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Saturation curves for thermal ALD of Li2CO3. The line chart shows the growth per cycle (Å) as a function of LiO'Bu dose (s), H2O dose and CO2 dose.\"},{\"panel_id\":\"b\",\"text\":\"Saturation curves for plasma-assisted ALD of Li2CO3. The line chart shows the growth per cycle (Å) as a function of LiO'Bu dose and plasma duration.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Parameter | Growth per Cycle (Å) |\\n|-------------------|-----------------------|\\n| LiO'Bu dose (s) | 0.6 |\\n| H₂O dose (ms) | 0.6 |\\n| CO₂ dose (s) | 0.6 |\"},{\"panel_id\":\"b\",\"text\":\"| Parameter | Growth per Cycle (Å) |\\n|---------------------|-----------------------|\\n| LiO'Bu dose (s) | 0.8 |\\n| Plasma duration (s) | 0.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A LiOtBu dose of 6 s, a water dose of 50 ms and a CO2 dose of 2 s were chosen as standard conditions for thermal ALD of Li2CO3.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Without H2O dosing no film growth occurred and without CO2, LiOH was formed. Due to a slower response speed of the CO2 valve, dosing of 0.5 s or less did not deliver any CO2 in the chamber (no pressure increase was observed). Purge steps after LiOtBu and CO2 dose of 2 s are sufficient to remove the reaction products and unreacted species from the processing chamber, although 5 s purge was necessary for H2O. A growth per cycle of 0.60 °A was found for the thermal ALD process.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The saturation behavior of the surface reactions during the two half cycles of the plasma-assisted ALD process, can be seen in b. For both half-cycles purge steps of 2 s are sufficient to remove the reaction products and unreacted species. A growth per cycle of 0.82 °A was obtained for a deposition temperature of 150 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":1,"y":4,"width":745,"height":403},{"panel_id":"b","x":752,"y":5,"width":541,"height":403}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/N. Hornsveld et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":1292,"height":411,"image_format":"jpeg","image_sha256":"fdc41a460aaed2018fd2f52daa3e9d459869f1c065260ad4973d878829020736","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_48_fig_1.jpg","caption":"FIG. 1. (Color online) GPC values as a function of (a) HyALD dose; (b) Ar purge time after precursor dose; (c) $\\mathrm{O}_2$ plasma exposure; and (d) purge time after the plasma step. The substrate temperature during the process was $250^{\\circ}\\mathrm{C}$ . The dashed lines serve as a guide to the eyes.","id":"test/atomic-layer-deposition/experimental-usecase/48/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/48/fig_1","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"},{"panel_id":"d","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between HfCp(NMe₂)₃ dose and GPC (nanometers). GPC increases sharply at short doses and then levels off near ~0.11 nm/cycle.\"},{\"panel_id\":\"b\",\"text\":\"The scatter plot shows the relationship between HfCp(NMe₂)₃ purge time and GPC (nanometers). The data points are relatively constant around 0.11 nm with no significant changes observed.\"},{\"panel_id\":\"c\",\"text\":\"The scatter plot shows the relationship between O₂ plasma exposure time and GPC (nanometers). The data points increase slightly with increasing exposure time up to 0.11 nm.\"},{\"panel_id\":\"d\",\"text\":\"The scatter plot shows the relationship between O₂ plasma purge time and GPC (nanometers). The data points decrease slightly with increasing exposure time.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HfCp(NMe₂)₃ dose (s) | GPC (nm) |\\n|---|---|\\n| 0.5 | 0.04 ± 0.008 |\\n| 1 | 0.09 ± 0.008 |\\n| 3 | 0.10 ± 0.008 |\\n| 5 | 0.11 ± 0.008 |\\n| 8 | 0.11 ± 0.008 |\"},{\"panel_id\":\"b\",\"text\":\"| HfCp(NMe₂)₃ purge (s) | GPC (nm) |\\n|---|---|\\n| 0 | 0.11 ± 0.008|\\n| 1 | 0.107 ± 0.008 |\\n| 3 | 0.106 ± 0.008 |\\n| 5 | 0.106 ± 0.008 |\\n| 10 | 0.108 ± 0.008 |\"},{\"panel_id\":\"c\",\"text\":\"| O₂ plasma exposure time (s) | GPC (nm) |\\n|---|---|\\n| 1 | 0.07 ± 0.008 |\\n| 3 | 0.09 ± 0.008 |\\n| 5 | 0.10 ± 0.008 |\\n| 8 | 0.11 ±0.008 |\"},{\"panel_id\":\"d\",\"text\":\"| O₂ plasma purge (s) | GPC (nm) |\\n|---|---|\\n| 0 | 0.12 ± 0.008 |\\n| 1 | 0.118 ± 0.008 |\\n| 2 | 0.111 ± 0.008 |\\n| 3 | 0.110 ± 0.008 |\\n| 4 | 0.108 ± 0.008 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After approx. 3 s of HfCp(NMe₂)₃ dose (~0.11 nm/cycle).\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, short purging after the HfCp(NMe₂)₃ step appears to adequately prevent additional (non-self-limiting) growth. The GPC at very short purge times is essentially the same as at longer purge times and remains near ≈0.11 nm/cycle within the error bars. Because increasing the purge duration does not lower the GPC relative to the short-/no-purge case, there is no evidence of extra growth from residual precursor.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Very short purges can leave behind reactive byproducts, that inflate GPC.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After approx. 5 s. of plasma exposure (beyond this point, the change in growth is within the error bars).\"}]}]","bbox":[{"panel_id":"a","x":1,"y":4,"width":501,"height":362},{"panel_id":"b","x":509,"y":5,"width":486,"height":362},{"panel_id":"c","x":1,"y":368,"width":501,"height":345},{"panel_id":"d","x":505,"y":366,"width":487,"height":345}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/Sharma et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"48","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":997,"height":714,"image_format":"jpeg","image_sha256":"86058ca64999979f7b706706b06ff40ef18284e0119545cbef9c8093a10c294b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_6_fig2.jpg","caption":"FIG.2. $\\mathrm{SnO_x}$ growth rate determined by VASE, as a function of (a) and (c) TDMASn pulse length $\\mathfrak{t}_1$ for timing sequences of $\\mathrm{t}_1{:}30{:}2{:}30\\mathrm{s}$ and (b) and (d) $\\mathrm{H}_2\\mathrm{O}$ pulse length $\\mathfrak{t}_3$ for timing sequences of $1:30:\\mathrm{t}_3:30\\mathrm{s}$ The substrate was Si(100) at $150^{\\circ}\\mathrm{C}$ for (a) and (b) and at $30^{\\circ}\\mathrm{C}$ for (c) and (d).","id":"test/atomic-layer-deposition/experimental-usecase/6/fig2","sample_id":"atomic-layer-deposition/experimental-usecase/6/fig2","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"},{"panel_id":"d","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents growth rate dependence on pulse length for TDMASn and H₂O across four panels (a–d), highlighting two distinct growth regimes. Panels (a) and (b) show saturation behavior around ~0.7 Å/cycle, with growth plateauing beyond 1–2 seconds of precursor exposure, indicative of self-limiting ALD reactions. In contrast, panels (c) and (d) exhibit a much higher growth rate of ~2.0 Å/cycle under shorter pulse conditions, suggesting a different growth mechanism or system configuration. These observations confirm typical ALD characteristics and may imply process differences such as thermal vs. plasma ALD, or substrate surface reactivity changes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TDMASn Pulse Length (s) | Growth Rate (A/cycle) |\\n|---|---|\\n| 0.0 | 0.0 |\\n| 1.0 | 0.7 |\\n| 2.0 | 0.7 |\\n| 4.0 | 0.7 |\\n| 6.0 | 0.7 |\"},{\"panel_id\":\"b\",\"text\":\"| H₂O Pulse Length (s) | Growth Rate (A/cycle) |\\n|---|---|\\n| 0.0 | 0.15 |\\n| 1.0 | 0.65 |\\n| 2.0 | 0.75 |\\n| 4.0 | 0.7 |\\n| 6.0 | 0.7 |\"},{\"panel_id\":\"c\",\"text\":\"| TDMASn Pulse Length (s) | Growth Rate (A/cycle) |\\n|---|---|\\n| 0.0 | 0.0 |\\n| 1.0 | 2.0 |\\n| 2.0 | 2.0 |\\n| 4.0 | 2.0 |\"},{\"panel_id\":\"d\",\"text\":\"| H₂O Pulse Length (s) | Growth Rate (A/cycle) |\\n|---|---|\\n| 0.0 | 0.0 |\\n| 1.0 | 2.0 |\\n| 2.0 | 2.0 |\\n| 4.0 | 2.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"(a), (b), saturation at ~0.7 Å/cycle, (c), (d), saturation at ~2.0 Å/cycle, (b), (d), initial growth increases with H₂O pulse time.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.0 seconds.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The consistent saturation behavior observed in each panel confirms the self-limiting nature of ALD surface reactions. In panels (a) and (b), the growth rate increases rapidly with precursor pulse time but plateaus at around 0.7 Å/cycle, indicating sufficient surface exposure. Panels (c) and (d) follow a similar saturation trend but reach a much higher steady-state growth rate of 2.0 Å/cycle, suggesting a different process condition or chemistry, such as enhanced reactivity or modified surface structure.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":8,"width":599,"height":285},{"panel_id":"b","x":7,"y":313,"width":597,"height":288},{"panel_id":"c","x":0,"y":614,"width":605,"height":288},{"panel_id":"d","x":4,"y":916,"width":600,"height":291}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/Mullings et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":605,"height":1208,"image_format":"jpeg","image_sha256":"96299feee181c204672d670177f523f7d4dd9342f4fde29d884d56cf20daa549","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_6_fig_3.jpg","caption":"FIG. 3. $\\mathrm{SnO_x}$ film thickness as a function of number of ALD cycles yielding a growth rate of $0.70\\mathrm{\\AA}$ cycle. Thicknesses were obtained using VASE for films deposited on Si(100) at $150^{\\circ}\\mathrm{C}$ with a time sequence of $130:2:30$","id":"test/atomic-layer-deposition/experimental-usecase/6/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/6/fig_3","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart presents a linear relationship between the number of SnO₂ ALD cycles and film thickness, highlighting consistent growth per cycle. The trend demonstrates self-limiting behavior typical of ALD, where each cycle deposits a nearly constant thickness of material. At 700 cycles, the film reaches approximately 480 Å, implying a growth rate of roughly 0.69 Å/cycle. This confirms a stable ALD process, with high conformity and control over thickness scaling.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of SnO₂ ALD cycles | Film Thickness (Å) |\\n|---|---|\\n| 0 | 0 |\\n| 100 | 50 |\\n| 200 | 100 |\\n| 500 | 350 |\\n| 700 | 480 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The linear relationship between ALD cycles and film thickness confirms that the SnO₂ growth is self-limiting and well-controlled. This behavior is characteristic of atomic layer deposition, where each cycle deposits a nearly uniform thickness. Such repeatability across hundreds of cycles highlights the process stability and makes it ideal for precise thickness control in thin-film applications.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"100 cycles ≈ 75 Å, 200 cycles ≈ 150 Å, 500 cycles ≈ 375 Å, 700 cycles ≈ 480 Å.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 0.69 Å/cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":609,"height":300}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/Mullings et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":609,"height":300,"image_format":"jpeg","image_sha256":"2d001e88209262fd07b365fec00cc4faca3b6c7431ebfcb2b8fb197cb473134d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_6_fig_4.jpg","caption":"FIG. 4. $\\mathrm{SnO_x}$ ALD growth rate as a function of temperature determined using VASE for films deposited on Si(100) for 200 cycles with timing sequence $1:30:2:30\\mathrm{s}$","id":"test/atomic-layer-deposition/experimental-usecase/6/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/6/fig_4","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot illustrates the variation in growth rate as a function of deposition temperature during a material deposition process, likely ALD. The plot reveals a clear negative correlation: as the deposition temperature increases from 25 °C to 200 °C, the growth rate steadily decreases from 2.0 Å/cycle to 0.4 Å/cycle. This trend may indicate a transition from a kinetically favorable low-temperature regime to a surface-limited regime at higher temperatures, where desorption or precursor decomposition could reduce deposition efficiency\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition Temperature (°C) | Growth Rate (Å/cycle) |\\n|---|---|\\n| 25 | 2.0 |\\n| 50 | 1.8 |\\n| 75 | 1.5 |\\n| 100 | 1.2 |\\n| 125 | 1.0 |\\n| 150 | 0.8 |\\n| 175 | 0.6 |\\n| 200 | 0.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The growth rate decreases consistently as the deposition temperature increases. At lower temperatures (25 °C–75 °C), the growth rate is relatively high, indicating effective precursor adsorption and surface reaction. As the temperature increases beyond 100 °C, the growth rate gradually drops, potentially due to decreased surface sticking probability or thermal decomposition of precursors, which reduces surface saturation efficiency. This suggests that optimal ALD conditions for maximum growth occur at lower temperatures in this process.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"25 °C, 50 °C, 75 °C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.8 Å/cycle\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":609,"height":316}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/Mullings et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":609,"height":316,"image_format":"jpeg","image_sha256":"b200b53139f6df66beeef951457b1c86ca48fc85609a9da3b192107fcab39cfb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_6_fig_5.jpg","caption":"FIG. 5. $\\mathrm{SnO_x}$ growth rate at $30^{\\circ}\\mathrm{C}$ determined by VASE as a function of nitrogen purge time following (a) TDMASn pulse length and (b) $\\mathrm{H}_2\\mathrm{O}$ pulse length for timing sequences of $1:1:2:1\\mathrm{t}_4\\mathrm{s}$ . The substrate was Si(100).","id":"test/atomic-layer-deposition/experimental-usecase/6/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/6/fig_5","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The two scatter plots examine how growth rate varies with increasing N₂ purge time after the TDMASn pulse during an ALD process. In both cases, a sharp decrease in growth rate is observed between 0 s and 60 s of purge time, indicating rapid removal or deactivation of reactive surface species. In plot (a), the growth rate partially recovers at intermediate purge times, while in (b), it continues to decrease monotonically. This suggests different mechanisms or sensitivities to precursor byproducts or surface reactivity in the two experimental conditions, possibly related to substrate type, reactant sequence, or deposition temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| N₂ Purge after TDMASn Pulse (s) | Growth Rate (Å/cycle) |\\n|---|---|\\n| 0 | 2.5 |\\n| 60 | 2.0 |\\n| 180 | 2.7 |\\n| 360 | 2.2 |\"},{\"panel_id\":\"b\",\"text\":\"| N₂ Purge after TDMASn Pulse (s) | Growth Rate (Å/cycle) |\\n|---|---|\\n| 0 | 3.5 |\\n| 60 | 2.0 |\\n| 180 | 1.8 |\\n| 360 | 1.7 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"0 s ≈ 3.5 Å/cycle, 60 s ≈ 2.0 Å/cycle, 180 s ≈ 1.8 Å/cycle, 360 s ≈ 1.7 Å/cycle.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure shows that increasing the N₂ purge time after the TDMASn pulse significantly affects the growth rate. In both experimental conditions, the growth rate sharply decreases between 0 and 60 seconds of purge time, suggesting a rapid loss of reactive surface species or byproduct accumulation effects. In plot (a), the growth partially recovers at 180 seconds, while in plot (b), it declines more steadily, indicating a stronger sensitivity to purge time. This highlights the importance of purge duration in maintaining process efficiency and controlling film uniformity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.7 Å/cycle.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":6,"width":601,"height":297},{"panel_id":"b","x":1,"y":311,"width":603,"height":297}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/6/Mullings et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":608,"height":606,"image_format":"jpeg","image_sha256":"2ca2983ab7609432e47df2a26cdb13f195f8619500e1c8532226c183134d4324","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_62_fig_6.jpg","caption":"FIG. 6. (Color online) (a) Time-integrated emission intensity at $388~\\mathrm{nm}$ related to CN emission, as a function of the $\\mathrm{Ta}[\\mathrm{N}(\\mathrm{CH}_3)_2]_5$ exposure time during plasma-assisted ALD of TaN. The emission intensity for zero $\\mathrm{Ta}[\\mathrm{N}(\\mathrm{CH}_3)_2]_5$ exposure time is due to emission from the $\\mathrm{H}_2$ plasma. (b) Time-integrated emission intensities of O plasma species and $\\mathrm{H}$ and CO reaction products as a function of the number of consecutive $\\mathrm{Al}(\\mathrm{CH}_3)_3$ doses in the $\\mathrm{Al}_2\\mathrm{O}_3$ plasma-assisted ALD cycle. The lines serve as guides to the eye.","id":"test/atomic-layer-deposition/experimental-usecase/62/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/62/fig_6","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the integrated intensity of a CN peak after a certain Ta[N(CH₃)₂₅] exposure time.\"},{\"panel_id\":\"b\",\"text\":\"The chart displays the integrated intensity of different plasma species against the number of Al(CH₃) doses.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ta[N(CH₃)₂₅] exposure time (s) | Integrated intensity (a.u.) |\\n|---|---|\\n|0| 750 | \\n|1| 840 | \\n|2| 870 | \\n|3| 880 | \\n|4| 880 | \\n|5| 880 |\\n|6| 880 | \\n|7| 880 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Al(CH₃) doses| Integrated intensity (a.u.) O | Integrated intensity (a.u.) H | Integrated intensity (a.u.) CO | \\n|---|---|---|---|\\n| 0 |60|0|0|\\n| 1 |52|23|38|\\n| 2 |50|42|60|\\n| 3 |42|50|68|\\n| 4 |40|58|72|\\n| 5 |40|62|80|\\n| 6 |40|62|80|\\n| 8 |40|62|80|\\n| 12 |40|62|80|\\n| 16 |40|62|80|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The required exposure time is 4 seconds.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the pure hydrogen plasma, there are also species with intensity at this wavelength. This is used as the reference for the intensity after precursor dose.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It takes 6 doses.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the data, peaks related to oxygen species are visible. This is a clear indication that the plasma is an oxygen plasma.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":617,"height":539},{"panel_id":"b","x":3,"y":540,"width":625,"height":518}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/62/Mackus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"62","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":625,"height":1066,"image_format":"jpeg","image_sha256":"f405c52eafd7accdee1e22abcd058d6134dab69ff4d8b70550b5680dc2ba1d84","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_1.jpg","caption":"Fig. 1. Comparison of calculated rate constant with experiment [14] for the reaction $\\mathrm{TMG} \\rightarrow \\mathrm{DMG} + \\mathrm{CH}_3$ .","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_1","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot compares calculated reaction rate constants for Trimethylgallium (TMG) decomposition with experimental data from a previous work. The Arrhenius plot of log(k) versus reciprocal temperature (10000/T) shows strong agreement between the computed values (triangles) and experimental points. This consistency confirms that the ab initio–derived activation barriers accurately represent the gas-phase decomposition kinetics.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 10000/T (1/K) | log k (1/sec) | Work |\\n|--------------:|--------------:|------------|\\n| 7.0 | 6.4 | This work |\\n| 7.3 | 6.1 | This work |\\n| 7.6 | 5.8 | This work |\\n| 8.0 | 5.5 | This work |\\n| 8.3 | 5.2 | This work |\\n| 8.7 | 4.9 | This work |\\n| 9.0 | 4.6 | This work |\\n| 9.3 | 4.3 | This work |\\n| 9.6 | 4.0 | This work |\\n| 9.9 | 3.7 | This work |\\n| 10.2 | 3.4 | Experiment |\\n| 10.5 | 3.1 | Experiment |\\n| 10.8 | 2.8 | Experiment |\\n| 11.1 | 2.5 | Experiment |\\n| 11.4 | 2.2 | Experiment |\\n| 11.7 | 1.9 | Experiment |\\n| 12.0 | 1.6 | Experiment |\\n| 12.3 | 1.3 | Experiment |\\n| 12.6 | 1.0 | Experiment |\\n| 12.9 | 0.7 | Experiment |\\n| 13.2 | 0.4 | Experiment |\\n| 13.5 | 0.1 | Experiment |\\n| 13.8 | -0.2 | Experiment |\\n| 14.1 | -0.5 | Experiment |\\n| 14.4 | -0.8 | Experiment |\\n| 14.7 | -1.1 | This work |\\n| 15.0 | -1.4 | This work |\\n| 15.6 | -2.5 | This work |\\n| 16.5 | -3.8 | This work |\\n| 17.5 | -5.5 | This work |\\n| 19.5 | -9.5 | This work |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"I - Region 7 (10000/T): High temperature, corresponding to a very fast reaction rate (log k ≈ 5).\\nII - Region 14 (10000/T): Moderate temperature, where the reaction rate decreases significantly (log k ≈ −2).\\nIII - Region 20 (10000/T): Low temperature, at which the reaction is effectively negligible (log k ≈ −12).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Experimental data is absent at low temperatures (10000/T > 15) because the reaction becomes too slow to measure accurately in a lab setting. However, the computational route (triangles) extends well into this region (log k-12). This makes the theoretical model superior for simulating cool-down zones or exhaust lines, ensuring that even trace decomposition at low temperatures is accounted for in safety or clogging models.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The linear agreement confirms that the ab initio-derived transition state geometry and its associated energy barrier accurately represent the real kinetic pathway. The fundamental connection is Transition State Theory (TST), which states that the rate constant is directly governed by the Gibbs free energy of the activated complex. The close match validates that the computationally modeled reaction coordinate and barrier height (property) correctly map to the true chemical structure of the rate-determining transition state.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies that ab initio methods are a reliable tool for predictive process design. Engineers can use them to accurately model how temperature affects TMG decomposition rates in the gas phase, which is critical for controlling precursor delivery and reactivity in the MOCVD chamber. This allows for the in silico optimization of temperature and pressure parameters to maximize growth efficiency and film quality before costly and time-consuming reactor trials.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":587,"height":425}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":589,"height":431,"image_format":"jpeg","image_sha256":"c2f0a69e7119d65b367dcbd1985233a37f0e06e7a7df893cbfa1c1aaa7a1cf13","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_11.jpg","caption":"Fig. 11. Comparison of numerically calculated growth rate with experiment [3] at the diffusion-limited regime using the reactor geometry shown in Fig. 10.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_11","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_11","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot compares numerical predictions with experimental growth rates from Theodoropoulos et al. specifically within the diffusion-limited regime. The data shows a nearly constant growth rate (μm/hr) across the temperature range of 1120–1300 K, which the simulation reproduces accurately. The experiment data points are represented by diamonds, while the numerical results from the present study are shown as circles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| T (K) | Growth Rate (µm/hr) | Work |\\n|-------|---------------------|----------------------|\\n| 1120 | 2.50 | Experimental study |\\n| 1160 | 2.50 | Numerical (this work)|\\n| 1180 | 2.50 | Experimental study |\\n| 1200 | 2.55 | Numerical (this work)|\\n| 1220 | 2.50 | Experimental study |\\n| 1240 | 2.55 | Numerical (this work)|\\n| 1280 | 2.45 | Experimental study |\\n| 1320 | 2.50 | Numerical (this work)|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process is mass-transport (diffusion) limited. Since the rate is independent of temperature (flat line), surface reactions are fast and not the bottleneck. Therefore, increasing the temperature further will have no effect. However, increasing the precursor flow rate (flux) would directly increase the supply of reactants reaching the surface, thereby increasing the growth rate.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The simulation results (circles) closely match the experimental data (diamonds) at 1270 K and across the entire temperature range, with overlapping deposition rates near 2.5 μm/hr. This strong agreement demonstrates that the numerical model accurately captures the reactor transport phenomena, including diffusivity, boundary layer effects, and fluid flow, confirming its predictive reliability in this regime.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The constant growth rate indicates the process has entered a diffusion-limited regime. At lower temperatures, growth is typically reaction-limited, where the rate increases exponentially with temperature. Above a certain temperature, the surface reaction becomes so fast that the rate is instead limited by the slower, weakly temperature-dependent physical transport of reactants through the gas boundary layer to the surface, resulting in the observed plateau.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The flat growth rate profile across a 180 K window demonstrates inherent robustness to temperature fluctuations. This means that minor hot or cold spots in a large reactor will not translate into significant thickness variations, leading to better wafer-scale uniformity and higher manufacturing yield without requiring prohibitively precise temperature control.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":5,"width":584,"height":428}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":592,"height":434,"image_format":"jpeg","image_sha256":"68487a207a6a6934c89385270b76cc3237c82e94c61fdf63460e3f178bcf7fc4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_8.jpg","caption":"Fig. 8. Comparison of numerically calculated growth rates with experiment [5] along the radius of the wafer for the reactor shown in Fig. 7. Case I: pressure 100torr, $T = 1273\\mathrm{K}$ , $\\mathrm{NH}_3 = 2\\mathrm{slpm}$ , $\\mathrm{H}_2 = 10\\mathrm{slpm}$ , $\\mathrm{TMG} = 0.248\\mathrm{scm}$ .","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_8","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_8","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the radial GaN growth rate profile in a stagnation-flow reactor under Case I conditions with high H₂ flow. The simulated curve (diamonds with line) follows the experimental data (circles), with only minor deviation near the wafer center. This demonstrates that the model can reasonably capture spatial non-uniformity in convection-dominated growth conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Radius (cm) | Growth Rate (mm/hr) | study type |\\n|---|---| --- |\\n| 0 | 17.9 | Experiment |\\n| 0.5 | 6.7 | Numerical (present study) |\\n| 0.5 | 17.9 | Experiment |\\n| 1.0 | 4.2 | Numerical (present study) |\\n| 1.0 | 3.1 | Experiment |\\n| 1.5 | 2.7 | Numerical (present study) |\\n| 1.5 | 4 | Experiment |\\n| 2.0 | 1.9 | Numerical (present study) |\\n| 2.0 | 2.6 | Experiment |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Defining the reactor geometry and set the condition: high H₂ carrier gas flow.\\n\\n2. Solving the coupled equations for fluid flow, heat transfer, and chemical reactions across the 2D/3D domain.\\n\\n3. Extract the calculated growth rate at multiple points along the wafer radius.\\n\\n4. Plotting these values to create the spatial profile.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, for edge yield optimization, the model is reliable as it tracks the depletion profile accurately. However, it is totally inadequate for predicting center-wafer behavior.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The growth rate decreases from the center to the edge. This is caused by boundary layer development and precursor depletion. Under high convection, fresh precursor is delivered primarily to the center (stagnation point), then flows radially outward, becoming progressively depleted as it deposits material, leading to lower growth rates at larger radii.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, a 15-20% thickness variation would translate directly into an unacceptable variation in device electrical properties, such as threshold voltage and on-resistance, across the wafer. For power transistors, such non-uniformity would drastically reduce manufacturing yield, as devices from different radial positions would not meet the same specification.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":6,"width":584,"height":443}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":589,"height":450,"image_format":"jpeg","image_sha256":"beb86eca9b4757e9cca03de1f5f6bf4c4eb61b0d3c987c2aec0ebea9ad4ee803","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_9.jpg","caption":"Fig. 9. Comparison of numerically calculated growth rates with experiment [5] along the radius of the wafer for the reactor shown in Fig. 7. Case II: pressure 100torr, $T = 1273\\mathrm{K}$ , $\\mathrm{NH}_3 = 2\\mathrm{slpm}$ , $\\mathrm{H}_2 = 0.2\\mathrm{slpm}$ , $\\mathrm{TMG} = 0.248\\mathrm{scm}$ .","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_9","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_9","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This graph shows the growth rate profile for the same reactor as similar figure in this work but under Case II conditions with lower flow, where diffusion dominates transport. The simulation matches very closely with the experimental data across the full wafer radius. This agreement demonstrates the model’s strong accuracy in diffusion-controlled regimes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Radius (cm) | Growth Rate (cm/hr) | Study Type |\\n|---|---|---|\\n| 0.0 | -- | Numerical (present study) |\\n| 0.0 | 2.3 | Experimental |\\n| 0.5 | 1.7 | Numerical (present study) |\\n| 0.5 | 2.2 | Experimental |\\n| 1.0 | 1.76 | Numerical (present study) |\\n| 1.0 | 1.78 | Experimental |\\n| 1.5 | 1.69 | Numerical (present study) |\\n| 1.5 | 1.8 | Experimental |\\n| 2.0 | 1.58 | Numerical (present study) |\\n| 2.0 | 1.8 | Experimental |\\n| 2.5 | 1.47 | Numerical (present study) |\\n| 2.5 | 1.9 | Experimental |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The key change is a large reduction in the carrier gas (H₂) flow rate. Lower flow decreases convective velocity, reducing the Reynolds number and shifting dominance from convection to diffusion. This allows precursors more time to diffuse radially across the wafer, smoothing out concentration gradients and producing a uniform growth rate profile, as shown in Case II.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The diffusion-dominated regime (Case II) is preferable for superior uniformity. The flatter intrinsic profile minimizes center-to-edge variation. The primary trade-off is a lower overall growth rate and potentially poorer precursor vapor-phase mixing, which could lead to compositional non-uniformities in ternary alloys and reduced reactor throughput due to the slower deposition.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The profile here is significantly flatter and more uniform than the center-high, edge-low profile of Case I. Under diffusion-dominated transport, precursor redistribution is governed by Fick's Law, which drives species from high-concentration regions (above the center) toward low-concentration regions (above the edges). This natural smoothing effect reduces radial gradients, leading to the nearly uniform growth rate observed across the wafer radius.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the model's proven accuracy under diffusion-limited conditions means it can reliably predict how changes in reactor geometry, pressure, or flow will affect the uniformity-critical transport pathways. Engineers can use it to optimize a new reactor's design specifically for uniform precursor diffusion, confidently trading off some convective speed to achieve the target thickness uniformity.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":4,"width":582,"height":454}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":589,"height":456,"image_format":"jpeg","image_sha256":"662deaa67d76ba55660584fb61c21abdd87738661add9174a601103b36ba1174","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_34_figure_7.jpg","caption":"Figure 7. Two-point probe resistance measurement of Pt ALD-graphene contacts, Pt ALD growth was initiated by a $7\\min \\mathrm{H}_{2}$ plasma treatment. The resistance is averaged over six devices and divided by a correction factor $C$ , which takes into account the increase in the contact area with increasing ring size. Fitting Equation (3), the contact resistance is determined to be $0.5\\pm 0.2\\mathrm{k}\\Omega$ .","id":"test/atomic-layer-deposition/simulation-usecase/34/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/34/figure_7","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows a linear relationship between the gap size (in µm) and the resistance (corrected for contact area) in Ω.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Gap Size d (µm) | Rtot/C (Ω) |\\n|---|---|\\n| 0 | 0 |\\n| 5 | 20 |\\n| 10 | 40 |\\n| 15 | 50 |\\n| 17.5 | 70 |\\n| 22.5 | 80 |\\n| 25 | 90 |\\n| 35 | 120 |\\n| 40 | 150 |\\n| 47.5 | 170 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"7 minutes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.5 ± 0.2 kΩ µm, which is at the intercept of the vertical axis.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 150 Ω.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It increases linearly with a slope of about 1.01 ± 0.02 kΩ µm^-1.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":667,"height":500}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":667,"height":500,"image_format":"jpeg","image_sha256":"bd58daa8f1017c970dbeab903eb44509d6822621aac7bda4aaacb2a7e2a6cc36","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_40_fig_6.jpg","caption":"Fig. 6. Process efficiency as a function of the time required to perform 100 ALD cycles in the case of $\\mathrm{ZnO}$ deposition by SALD.","id":"test/atomic-layer-deposition/simulation-usecase/40/fig_6","sample_id":"atomic-layer-deposition/simulation-usecase/40/fig_6","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents the relationship between deposition efficiency (η₍dep₎) and the time required to complete 100 SALD cycles for ZnO deposition at different DEZ flow rates (15, 30, and 50 sccm). The data reveal a trade-off between throughput and efficiency, with 30 sccm providing the highest efficiency at moderate cycle times, while lower and higher flow rates lead to reduced efficiency due to under- or over-supply of precursor.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| DEZ Flow Rate (sccm) | Time for 100 ALD cycles (s) | Deposition efficiency (η_dep) |\\n|---------------------|----------------------------|-------------------------------|\\n| 15 | 45 | 0.045 |\\n| 15 | 55 | 0.048 |\\n| 15 | 65 | 0.050 |\\n| 15 | 80 | 0.043 |\\n| 15 | 90 | 0.037 |\\n| 30 | 30 | 0.052 |\\n| 30 | 35 | 0.054 |\\n| 30 | 40 | 0.055 |\\n| 30 | 45 | 0.053 |\\n| 30 | 50 | 0.050 |\\n| 50 | 30 | 0.047 |\\n| 50 | 35 | 0.045 |\\n| 50 | 40 | 0.043 |\\n| 50 | 45 | 0.038 |\\n| 50 | 50 | 0.036 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This figure enables identification of an optimal operating window where deposition efficiency is maximized without sacrificing throughput. The results indicate that intermediate DEZ flow rates (e.g., 30 sccm) balance sufficient precursor supply with minimal gas-phase loss, allowing faster processing while maintaining high efficiency. Such optimization is critical for scaling SALD processes to high-throughput manufacturing of ZnO films in applications like transparent electronics and sensors.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"DEZ precursor flow rate (15, 30, 50 sccm), Time required for 100 SALD cycles, Precursor utilization efficiency, Gas–surface interaction dynamics\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"30 sccm DEZ shows the highest deposition efficiency (~0.055) at intermediate cycle times (~35–50 s).\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":605,"height":547}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/40/Viet Huong Nguyen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":605,"height":547,"image_format":"jpeg","image_sha256":"582993bb84354e3279e96a09317139dc5af6497c332ecad21958fc0a0ca13747","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_12_fig2.jpg","caption":"FIG.2. Saturation curves for (a) $\\mathrm{SF}_6$ plasma exposure using a $0.5s$ TMA dose, (b) the pump step following $\\mathrm{SF}_6$ plasma exposure, (c) TMA dosing using a $5s$ $\\mathrm{SF}_6$ plasma exposure, and (d) the pump step following $\\mathrm{SF}_6$ TMA dose. All experiments were conducted at a substrate temperature of $260^{\\circ}C$ with $10s$ TMA hold steps. The dashed lines are guides to the eye.","id":"test/atomic-layer-etching/experimental-usecase/12/fig2","sample_id":"atomic-layer-etching/experimental-usecase/12/fig2","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"},{"panel_id":"d","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"EPC increases rapidly with SF₆ plasma exposure time and saturates at ≈3.4 Å after ~5s for a 0.5s TMA dose at 260 °C. The auto summary did not identify the saturation threshold or the self-limiting nature of the plasma step. The manual summary clarifies the time required to reach full fluorination.\"},{\"panel_id\":\"b\",\"text\":\"EPC remains constant at ≈3.1–3.3 Å across the full plasma pump-time range following SF₆ exposure. The auto summary described only a generic dependence, whereas the manual version highlights that pump time does not influence EPC once saturation is reached.\"},{\"panel_id\":\"c\",\"text\":\"EPC shows a sharp onset between 0.2 and 0.4 s TMA dosing and saturates near ≈3.3 Å for a fixed 5s SF₆ plasma exposure. The auto summary missed this threshold behavior and the implication of a self-limiting ligand-exchange step. The manual summary explicitly identifies the dosing time required for saturation.\"},{\"panel_id\":\"d\",\"text\":\"EPC is insensitive to TMA pump time and remains at ≈3.2–3.3 Å across all values shown. The auto summary implied a dependence without interpretation. The manual summary clarifies that the reaction completes during dosing and does not require extended pumping.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| SF plasma time (s) | EPC (Å) |\\n|---|---|\\n| 0 | 0 |\\n| 5 | 2 |\\n| 10 | 3 |\\n| 15 | 3 |\\n| 20 | 3 |\\n| 25 | 3 |\\n| 30 | 3 |\"},{\"panel_id\":\"b\",\"text\":\"| Plasma pump time (s) | EPC (Å) |\\n|---|---|\\n| 10 | 2.9 |\\n| 20 | 3 |\\n| 30 | 3 |\"},{\"panel_id\":\"c\",\"text\":\"| TMA dosing time (s) | EPC (Å) |\\n|---|---|\\n| 0 | 0 |\\n| 0.1 | -0.1 |\\n| 0.2 | 0 |\\n| 0.4 | 2 |\\n| 0.6 | 3 |\\n| 0.8 | 3 |\"},{\"panel_id\":\"d\",\"text\":\"| TMA pump time (s) | EPC (Å) |\\n|---|---|\\n| 5 | 3.25 |\\n| 10 | 3 |\\n| 30 | 3 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 0.3 s.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At this dose time there is a negative EPC indicating that there is deposition of aluminum.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"≥0.4 s\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It reveals that a minimum coverage of surface fluorine species (from SF₆ plasma) must be present before TMA can effectively react and release volatile etch products.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TMA dose saturates quickly for doses longer than 0.3 s. Doses shorter than 0.2 s were found to cause a negligible thickness change, which is likely related to the consumption of TMA by AlF3 deposition on the reactor walls (100 °C) that are at a lower temperature than the substrate holder (300 \\u0002C). Previous work has shown that AlF3 ALD using SF6 plasma and TMA readily occurs at low temperatures. It is, therefore, likely that a significant amount of dosed TMA is adsorbed on the reactor walls before it can reach the substrate\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3.1 Å.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 0.2 s (based on the EPC crossing from negative to positive).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At about ~0.3 s TMA dose. It is clearly saturated by ~0.4–0.5 s\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10 s.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process would be 5-5-0.5-5.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The initial decrease suggests that some active TMA molecules are pumped away before reacting if the purge is too short. Therefore, the optimal pump time is just beyond the dip (~10-15s), where EPC stabilizes. This maximizes precursor utilization by allowing sufficient reaction time while minimizing waste and cycle time, which is critical for cost-effective high-volume production.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The measured EPC is higher than the literature results reported for thermal ALE of Al2O3 with HF/TMA at a comparable temperature.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes, the saturation of EPC in Figure 2 indicate self-limiting surface reactions characteristic of ALE.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"EPC increases with both SF₆ plasma exposure time and TMA dosing time until a saturation level is reached, indicating self-limiting surface reactions. In contrast, EPC shows little dependence on plasma pump time or TMA pump time.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure shows the etching per cycle as a function of plasma and precursor dose time.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SF6.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The saturated time is already around 5s, however the process soft-saturates.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"5 s\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The experimentally determined Etch Per Cycle (EPC) is approximately 3.1 Å/cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~2 seconds (the EPC saturates after the initial sharp rise between 0-2s).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, similar to the modification steps observed for many other ALE processes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"260 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the film is exposed to SF6 plasma, the formed fluorine radicals react quickly with surface Al2O3 molecules to form AlF3. This AlF3 then acts as a protective layer, which inhibits the remaining fluorine radicals from reacting with Al2O3 below the AlF3 film. However, this AlF3 does not completely prevent the fluorine radicals from reaching the lower layers of Al2O3, so more AlF3 gets formed as the exposure time of SF6 increases. After about 3 seconds, this reaction does become diffusion-limited, which explains the observed change.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The initial fast increase comes from rapid fluorination of the surface. As the fluorinated layer thickens, additional fluorination becomes harder because reactants must penetrate through this layer. The fluorinated layer therefore acts as a diffusion barrier, leading to a slower EPC increase.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around ~5 s.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure demonstrates that both SF6 plasma exposure and TMA dosing exhibit self-limiting behavior, typical of ALE processes. For SF6 plasma, the EPC rapidly increases for short exposure times and saturates around 5 s, indicating full surface fluorination. For TMA, EPC saturates after ~0.3–0.5 s, reflecting complete adsorption on the fluorinated surface. Pump steps of 10 s between half-cycles are sufficient to prevent parasitic reactions, ensuring that etching occurs only when alternating plasma and TMA doses are applied. Overall, the curves confirm the controlled, self-limiting nature of the plasma ALE process.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SF₆ plasma exposure and TMA dosing.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both subfigure b and d show that 5 s is sufficient purge time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Neither; EPC remains constant at ≈3.3 Å.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Plasma exposure time is critical; EPC rises sharply until saturation at ~2s, indicating the time needed for surface fluorination. In contrast, plasma pump time has minimal effect after ~10s, suggesting that reactant removal is not rate-limiting. The trade-off is that precise control of the active plasma step is essential for consistent etching, while the purge step offers a wider, more forgiving time window, allowing for throughput optimization without sacrificing etch rate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A minimum plasma pump steps of 10 s are sufficient to avoid a parasitic etching component\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10 s.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"SF₆ plasma exposure time, TMA dosing time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"EPC increases rapidly at short SF6 plasma exposure times and then saturates at ~3 Å/cycle, TMA dosing exhibits quick saturation above ~0.3 s, with little additional growth for longer doses, Pump steps (both after plasma and TMA) show no significant change in EPC after 10 s, confirming removal of excess reactants, The self-limiting behavior is consistent for both plasma and TMA, ensuring precise etching per cycle\"}]}]","bbox":[{"panel_id":"a","x":8,"y":0,"width":322,"height":371},{"panel_id":"b","x":358,"y":0,"width":324,"height":369},{"panel_id":"c","x":9,"y":384,"width":321,"height":361},{"panel_id":"d","x":363,"y":384,"width":319,"height":359}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/images/fig2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/12/Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":683,"height":745,"image_format":"jpeg","image_sha256":"282f63a976d7ce9cf90149fa5b7a986aa6289d45e82ebe9f1faf1aa16105f66f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_4.jpg","caption":"Figure 4. Temperature dependence of AlN ALE with HF and $\\mathrm{BCl}_3$ as the reactants as measured by the change in integrated absorbance per cycle at 200, 250, 300, and $350^{\\circ}\\mathrm{C}$ . The integrated absorbance was measured from 400 to $1000\\mathrm{cm}^{-1}$","id":"test/atomic-layer-etching/experimental-usecase/20/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_4","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between temperature and the change in absorption intensity per cycle at 200 °C, 250 °C, 300 °C and 350 °C. As temperature increases, there is a negative trend in the change in absorption intensity.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Δ Int. Abs./ Cycle (cm⁻¹) |\\n|-----------------|--------------------------|\\n| 200 | 0 |\\n| 250 | -1.5 |\\n| 300 | -2.2 |\\n| 350 | -3.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"With this figure it is possible to see the temperature dependence of the AlN cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the temperature increases, higher absorbance changes and higher etching rates are observed.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 350 °C\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This means that there is negligible AlN etching.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":655,"height":493}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":658,"height":500,"image_format":"jpeg","image_sha256":"18339f82d20902ddebfb02373f97e45687ff17fe256c834ba330d3aa418e9a3c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_20_figure_9.jpg","caption":"Figure 9. Etch rate changes during AlN ALE vs $\\mathrm{BCl}_3$ exposure at 255 $^\\circ \\mathrm{C}$ using an $\\mathrm{XeF}_2$ exposure of 0.060 Torr s.","id":"test/atomic-layer-etching/experimental-usecase/20/figure_9","sample_id":"atomic-layer-etching/experimental-usecase/20/figure_9","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between BCl₃ exposure time (in Torr·s) and etch rate (in Å/cycle) at a constant temperature of 255°C and with a constant pressure of 0.060 Torr s of XeF₂, and varying BCl₃ pressure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| BCl₃ Exposure (Torr·s) | Etch Rate (Å/cycle) |\\n| --- | --- |\\n| 0 | 0.40 |\\n| 50 | 0.65 |\\n| 100 | 0.80 |\\n| 150 | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The experiment was conducted at a temperature of 255 °C and a pressure of 0.060 Torr s of XeF2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As BCl3 exposure increases, so does the etch rate, rising from 0.4 to 0.8 Å/cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At approximately 50 Torr s.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":0,"y":1,"width":656,"height":513}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/images/figure_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/20/Thermal Atomic Layer Etching of Aluminum Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":661,"height":517,"image_format":"jpeg","image_sha256":"33ed721febee3e0aa7437fd16f291cf341930b9ea9d6b0f78704cae6a07a5c3f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_10.jpg","caption":"Figure 10. Arrhenius plot of temperature-dependent etch rates for $\\mathrm{WO}_3$ ALE. Slope of the Arrhenius plot yields an activation barrier of $8.6\\mathrm{kcal / mol}$ .","id":"test/atomic-layer-etching/experimental-usecase/25/figure_10","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_10","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the logarithmic relationship between the inverse temperature (1000/T) and the etch rate of WO₃, which is called an Arrhenius plot.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 1000/T (K⁻¹) | ln [WO₃ Etch Rate (Å/cycle)] |\\n|---|---|\\n| 2.1 | 1.4 |\\n| 2.2 | 0.9 |\\n| 2.3 | 0.5 |\\n| 2.4 | 0.1 |\\n| 2.5 | -0.3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The slope gives information regarding the activation energy. For the reaction to occur.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes there is an uncertainty. This is mainly caused by the fact that not all datapoints are precisely located on the line.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A negative value on this y-axis represents an etch rate that is smaller than 1 angstrom per cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The temperature is a probe of the kinetic energy reactants help. Usually a reaction requires an activation energy and by providing a certain temperature, the kinetic energy will increase leading to the reaction to occur.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":8,"width":655,"height":558}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":670,"height":570,"image_format":"jpeg","image_sha256":"148214790a55dca57c3e1346c32a480176df572b039c7a0a8fba1b7c4d3a2515","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_11.jpg","caption":"Figure 11. W thickness versus number of cycles during W ALE at 207 $^\\circ \\mathrm{C}$ using $\\mathrm{O}_2 / \\mathrm{O}_3$ , $\\mathrm{BCl}_3$ , and HF as reactants. Etch rate during W ALE is $2.56\\mathrm{\\AA} / \\mathrm{cycle}$ .","id":"test/atomic-layer-etching/experimental-usecase/25/figure_11","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_11","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A line chart showing the decrease in W thickness (Å) as the number of cycles increases, with a slope of 2.56.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | W Thickness (Å) |\\n|------------------|-----------------|\\n| 20 | 263 |\\n| 30 | 239 |\\n| 40 | 210 |\\n| 50 | 183 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"207 degrees Celcius\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After the 50 cycles, around 185 angstrom is still present, the EPC is 2.56 angstrom per cycle, so still around 70 cycles are required.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"225 angstrom.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The EPC is 0.256 nm/cycle and this does relate to ALE as the etch per cycle is not too high.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":669,"height":551}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":672,"height":558,"image_format":"jpeg","image_sha256":"1f356e7364dd1230a347871ec3d444980dbbf9fe58552a03a2e0517a255efce0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_14.jpg","caption":"Figure 14. W etch rate versus $\\mathrm{O}_2 / \\mathrm{O}_3$ exposure during W ALE at $207^{\\circ}\\mathrm{C}$ . $\\mathrm{BCl}_3$ and HF exposures were held at 500 and 2800 mTorr s, respectively.","id":"test/atomic-layer-etching/experimental-usecase/25/figure_14","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_14","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the relationship between oxygen/ozone exposure (in mTorr s) and the etch rate of tungsten (W) in angstrom per cycle. The etch rate increases with increasing exposure up to 3000 mTorr s, after which it plateaus.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| O₂/O₃ Exposure (mTorr s) | W Etch Rate (Å/cycle) |\\n|---|---|\\n| 0 | 0.0 |\\n| 1000 | 0.7 |\\n| 2000 | 1.9 |\\n| 3000 | 2.4 |\\n| 4000 | 2.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The feature that is visible is self-limiting. This is visible by the formation of a plateau after 3000 mTorr s.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2.4 angstrom per cycle\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As O3 is usually more reactive than O2, a higher fraction of O3 is likely to result in a decrease in required exposure time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":3,"y":1,"width":663,"height":554}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_14.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":670,"height":556,"image_format":"jpeg","image_sha256":"cd32800c523792d16f82286d5522ac5c84a8187c8104294cc4e5f595d2c9d941","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_15.jpg","caption":"Figure 15. W etch rate versus reactant exposure during W ALE. (a) $\\mathrm{BCl}_3$ exposure was varied with HF and $\\mathrm{O}_2 / \\mathrm{O}_3$ exposures held at 2800 and $3150~\\mathrm{mTorr}$ s, respectively. (b) HF exposure was varied with $\\mathrm{BCl}_3$ and $\\mathrm{O}_2 / \\mathrm{O}_3$ exposures held at 500 and $3150~\\mathrm{mTorr}$ s, respectively.","id":"test/atomic-layer-etching/experimental-usecase/25/figure_15","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_15","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch rate of W increases with increasing BCl₃ exposure at a constant temperature of 207°C, and constant HF and O2/O3 exposures.\"},{\"panel_id\":\"b\",\"text\":\"The etch rate of W increases with increasing HF exposure at a constant temperature of 207°C, and constant BCl3 and O2/O3 exposures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| BCl₃ Exposure (mTorr s) | W Etch Rate (Å/cycle) |\\n|---|---|\\n| 0 | 0.0 |\\n| 200 | 2.2 |\\n| 300 | 2.4 |\\n| 500 | 2.4 |\"},{\"panel_id\":\"b\",\"text\":\"| HF Exposure (mTorr s) | W Etch Rate (Å/cycle) |\\n|---|---|\\n| 0 | 0.0 |\\n| 1000 | 1.8 |\\n| 2000 | 2.4 |\\n| 3000 | 2.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If this is not the case the, the outcome of the BCl3 exposure sweep will not represent the highest achievable etch rate. In addition, it will not represent ALE, as the reactions have not been performed till saturation is achieved.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1.5 angstrom per cycle\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"2.5 angstrom per cycle, and this does correspond to the other achieved EPCs.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that temperature has an influence on the etch per cycle which might interfere with the results achieved by changing the HF exposure.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":3,"width":636,"height":532},{"panel_id":"b","x":1,"y":533,"width":643,"height":536}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_15.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":647,"height":1073,"image_format":"jpeg","image_sha256":"e42cbf1cada2777832cf7f632214b6404e0b7c64120e5f0aa626860f423234e3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_16.jpg","caption":"Figure 16. $\\mathrm{WO}_3$ thickness versus number of $\\mathrm{O}_2 / \\mathrm{O}_3$ exposures for initial W ALD film. Each $\\mathrm{O}_2 / \\mathrm{O}_3$ exposure was 70 mTorr for $45\\mathrm{~s~}$","id":"test/atomic-layer-etching/experimental-usecase/25/figure_16","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_16","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The graph shows the thickness of WO₃ as a function of the number of O₂/O₃ exposures at 207°C, where the thickness increases for increasing number of exposures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of O₂/O₃ Exposures | WO₃ Thickness (Å) |\\n|---|---|\\n| 0 | 33 |\\n| 1 | 33 |\\n| 2 | 33 |\\n| 3 | 35 |\\n| 4 | 37 |\\n| 5 | 42 |\\n| 6 | 45 |\\n| 8 | 49 |\\n| 10 | 52 |\\n| 12 | 55 |\\n| 16 | 59 |\\n| 20 | 61 |\\n| 24 | 62 |\\n| 28 | 63 |\\n| 32 | 64 |\\n| 34 | 65 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1 up until 3 exposures\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The is no perfect saturation achieved for ever increasing number of exposures, but a linear line is observed. This is usually referred to as soft-saturation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Underlayin tungsten (W).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"28 angstrom\"}]}]","bbox":[{"panel_id":"a","x":5,"y":1,"width":662,"height":547}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_16.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":670,"height":550,"image_format":"jpeg","image_sha256":"9025016d377ffeed455d2379654c06f855485fe2a53fef80e3c82f009e00b519","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_17.jpg","caption":"Figure 17. $\\mathrm{WO}_3$ removal after W ALE using $\\mathrm{BCl}_3$ and HF as reactants. (a) $\\mathrm{WO}_3$ thickness versus number of cycles showing reduction of $\\mathrm{WO}_3$ thickness to limiting value of $\\sim 3\\mathrm{\\AA}$ . (b) W thickness versus number of cycles showing that W thickness remains nearly constant during $\\mathrm{WO}_3$ removal.","id":"test/atomic-layer-etching/experimental-usecase/25/figure_17","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_17","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The thickness of WO₃ decreases rapidly at first and then plateaus for increasing number of cycles.\"},{\"panel_id\":\"b\",\"text\":\"The thickness of W remains relatively constant for increasing number of cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | WO₃ Thickness (Å) |\\n|---|---|\\n| 0 | 20 |\\n| 3 | 14 |\\n| 6 | 7 |\\n| 12 | 4 |\\n| 18 | 4 |\\n| 24 | 3 |\\n| 30 | 3 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of Cycles | W Thickness (Å) |\\n|---|---|\\n| 0 | 219 |\\n| 3 | 217 |\\n| 6 | 217 |\\n| 12 | 216 |\\n| 18 | 216 |\\n| 24 | 215 |\\n| 30 | 215 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3 angstrom\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the etching of W, it must first be modified into WO3. As this process does not contain a O2/O3 step, this does not happen.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process is selective. Only WO3 is etched whereas W is unharmed. This means the process is selective towards WO3 w.r.t. W.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"None\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":661,"height":414},{"panel_id":"b","x":6,"y":432,"width":659,"height":454}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_17.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_17.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":669,"height":891,"image_format":"jpeg","image_sha256":"ca193ef1d48f1405b159d1896e5ea230bac41fde70aee21bb3314872129e6721","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_3.jpg","caption":"Figure 3. $\\mathrm{WO}_3$ thickness versus number of cycles showing $\\mathrm{WO}_3$ ALE at $207^{\\circ}\\mathrm{C}$ using $\\mathrm{BCl}_3$ and HF as reactants. W film under $\\mathrm{WO}_3$ layer acts as an etch stop.","id":"test/atomic-layer-etching/experimental-usecase/25/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_3","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the linear decrease in thickness of WO₃ with increasing number of cycles at 207°C. The text annotations indicate that W acts as an etch stop.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | WO₃ Thickness (Å) |\\n|---|---|\\n| 0 | 150 |\\n| 5 | 120 |\\n| 10 | 100 |\\n| 15 | 75 |\\n| 20 | 50 |\\n| 25 | 30 |\\n| 30 | 10 |\\n| 35 | 10 |\\n| 40 | 10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate can be determined by calculating the slope, which gives a value around 5 angstrom per cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process without O2/O3 exposure is selective for WO3 w.r.t. W, so there is no etching of W.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"15 nm.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes there will be, tungsten will oxidize after exposure to ambient so there will be a thin layer of WO3 at the surface.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":3,"width":665,"height":545}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":672,"height":550,"image_format":"jpeg","image_sha256":"2d6241cacf354d8bc02d2e9e2651ca695e1ea372aad27ffd5b48490afcdc1591","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_25_figure_4.jpg","caption":"Figure 4. $\\mathrm{WO}_3$ thickness versus number of cycles showing $\\mathrm{WO}_3$ ALE at $207^{\\circ}\\mathrm{C}$ using $\\mathrm{BCl}_3$ and HF as reactants. Etch rate during $\\mathrm{WO}_3$ ALE is $4.18\\mathrm{\\AA}$ /cycle.","id":"test/atomic-layer-etching/experimental-usecase/25/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/25/figure_4","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the decrease in thickness of WO₃ with increasing number of cycles at 207°C. The etch rate is calculated as 4.18 Å/cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | WO₃ Thickness (Å) |\\n|---|---|\\n| 10 | 135 |\\n| 15 | 110 |\\n| 20 | 85 |\\n| 25 | 60 |\\n| 30 | 50 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The slope of the line is equal to the etch rate, which is 4.18 angstrom/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"85 angstrom.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Etch rate entails that is a thickness over a time unit that is removed, usually a cycle is seen as this timeunit. However, this does not always hold.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Still between 10 and 15 cycles\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":667,"height":541}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/25/WO3 and W Thermal Atomic Layer Etching Using Conversion-Fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":673,"height":547,"image_format":"jpeg","image_sha256":"ebe7bf428c9af2a26875be99a56d5105a444373512ee0e1684c6f2443b6b5cea","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_37_fig_3.jpg","caption":"FIG. 3. Growth per cycle (GPC) of $\\mathrm{TiO_2}$ thin films deposited on Si-OH surface measured by in situ ellipsometry. One of the precursor dosing times is held constant at $300\\mathrm{ms}$ while the dosing time of (a) $\\mathrm{TiCl_4}$ and (b) $\\mathrm{H}_2\\mathrm{O}$ is varied.","id":"test/atomic-layer-etching/experimental-usecase/37/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/37/fig_3","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The growth per cycle remains constant at approximately 0.05 nm/cycle across various TiCl4 doses ranging from 0 ms to 350 ms.\"},{\"panel_id\":\"b\",\"text\":\"The growth per cycle remains constant at approximately 0.05 nm/cycle across various H2O doses ranging from 0 ms to 350 ms.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TiCl4 dose (ms) | Growth per cycle (nm/cycle) |\\n|---|---|\\n| 0 | 0.00 |\\n| 50 | 0.05 |\\n| 100 | 0.05 |\\n| 150 | 0.05 |\\n| 200 | 0.05 |\\n| 250 | 0.05 |\\n| 300 | 0.05 |\\n| 350 | 0.05 |\"},{\"panel_id\":\"b\",\"text\":\"| H2O Dose (ms) | Growth per cycle (nm/cycle) |\\n|---|---|\\n| 0 | 0.00 |\\n| 50 | 0.04 |\\n| 100 | 0.05 |\\n| 150 | 0.05 |\\n| 200 | 0.05 |\\n| 250 | 0.05 |\\n| 300 | 0.05 |\\n| 350 | 0.05 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"170 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.05 nm/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The GPC as a function of TiO2 exposure plateaus at 0.05 nm/cycle after 50 ms of exposure time. The same is observed for the water exposure after about 150 ms. After these points, the growth per cycle is no longer dependent on exposure time, indicating self-limiting growth. This means that this process meets the requirement of ALD.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.05 nm/cycle.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":667,"height":550},{"panel_id":"b","x":1,"y":551,"width":667,"height":535}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/37/Effect of reactant dosing on selectivity during area-selective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":1091,"image_format":"jpeg","image_sha256":"b11943e7dba153b820183e93fe05c73702087a4cf25f6e961c46acc0b39acbe0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_44_fig_4.jpg","caption":"FIG. 4. (Color online) Film thickness vs number of AlN ALE reaction cycles at $275^{\\circ}\\mathrm{C}$ in pure AlN region of AlN film. Change of thickness vs number of AlN ALE reaction cycles gives an etch rate of $0.38\\mathrm{\\AA}$ /cycle.","id":"test/atomic-layer-etching/experimental-usecase/44/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/44/fig_4","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the thickness of an aluminum nitride (AlN) film as a function of the number of Atomic Layer Etching (ALE) reaction cycles at 275 °C, specifically in the pure AlN region of the film. From the linear change in thickness with cycle count, an average etch rate of 0.38 Å/cycle is determined. The number of cycles were taken from 472 to 492.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle Number | Thickness (Å) |\\n|---|---|\\n| 472 | 412 |\\n| 474 | 411 |\\n| 476 | 410 |\\n| 478 | 409 |\\n| 480 | 408 |\\n| 482 | 407 |\\n| 484 | 407 |\\n| 486 | 406 |\\n| 488 | 405 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"HF exposure: Fluorinates the surface to form an AlF₃ layer.\\n\\nSn(acac)₂ exposure: Performs a ligand-exchange reaction to volatilize the fluorinated layer.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The trade-off is between process efficiency and surface preparation. The pure AlN etches efficiently, but the unavoidable native oxide acts as a \\\"slow-etch barrier.\\\" This forces a choice: accept a long, non-productive overetch to clear the oxide, or add a separate pre-cleaning step to remove it, adding complexity to the process flow.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Its high thermodynamic stability (sublimation point 1291°C), which allows it to remain as a solid, well-defined surface layer for the Sn(acac)₂ to react with.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The four-center transition state ensures the reaction is highly specific and occurs only at the immediate interface between the Sn(acac)₂ precursor and the solid AlF₃ surface layer. This localized, surface-limited reaction prevents spontaneous gas-phase decomposition or bulk etching. Consequently, the etch process is intrinsically self-limiting, removing exactly one reacted layer per cycle and enabling atomic-scale depth control critical for nanofabrication.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":598,"height":475}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/44/Thermal atomic layer etching of crystalline aluminum nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":606,"height":480,"image_format":"jpeg","image_sha256":"9637ec1086968b26886134527ef7ce44a099607a119c2b79e426ac34dc02b085","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG8_a.jpg","caption":"FIG. 8. (a) $R_{\\mathrm{q}}$ of molybdenum films as a function of the number of ALE cycles at $300^{\\circ}\\mathrm{C}$ as measured by AFM. AFM images of (b) an unetched film with a thickness of around $55\\mathrm{nm}$ and (c) a film etched for 200 cycles, with a remaining thickness of $41.6\\mathrm{nm}$ .","id":"test/atomic-layer-etching/experimental-usecase/47/FIG8_a","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG8_a","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image plots number of ALE cycles and the surface roughness.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| no. cycles | Rq (nm) |\\n|---|---|\\n| 0 | 3.2 |\\n| 50 | 3.5 |\\n| 100 | 3.6 |\\n| 200 | 4.2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"AFM was used to study the film morphology before and after partial etching at 300 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A slight increase of the roughness was seen. The average Rq of the unetched films was 3.3 nm, and for the film etched for 200 cycles, i.e., 21 nm in thickness, the average Rq was 4.3 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, we need the AFM images with 2D/3D contour plot to evaluate the grain boundaries and morphology more precisely\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":664,"height":570}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG8_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG8_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":678,"height":509,"image_format":"jpeg","image_sha256":"db11c50f028e2070658cc258c7c5482a4b26fa17a268d17763cd513b5e692a2d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_18_fig7.jpg","caption":"FIG.7. (a) Scatter plot for Hf-F coverage vs total HF coverage for the surface coverage values in Table III. Plots (b) and (c) show the change in binding energy per square nanometer with an increase in HF and Hf-F coverage, respectively.","id":"test/atomic-layer-etching/simulation-usecase/18/fig7","sample_id":"atomic-layer-etching/simulation-usecase/18/fig7","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a scatter plot with points representing the relationship between coverage of HF per nm² and Hf-F per nm². The coverage of Hf-f increases as well as the coverage of Hf.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays a scatter plot with points indicating the binding energy (E_bind) in eV/nm² against the coverage of HF per nm². Energy decreases as the coverage increases.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows a scatter plot with points representing the binding energy (E_bind) in eV/nm² against the coverage of Hf-F per nm². Energy decreases as the coverage increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Coverage [HF/nm²] | Coverage [Hf-F/nm²] |\\n|---|---|\\n| 0 | 0 |\\n| 5 | 4 |\\n| 10 | 6.5 |\\n| 15 | 7 |\\n| 20 | 9 |\"},{\"panel_id\":\"b\",\"text\":\"| Coverage [HF/nm²] | E_bind [eV/nm²] |\\n|---|---|\\n| 0 | -1 |\\n| 5 | -10 |\\n| 10 | -15 |\\n| 15 | -18 |\\n| 20 | -21 |\"},{\"panel_id\":\"c\",\"text\":\"| Coverage [HF/nm²] | E_bind [eV/nm²] |\\n|---|---|\\n| 0 | -2 |\\n| 2 | -4 |\\n| 4 | -10 |\\n| 6 | -18 |\\n| 8 | -20 |\\n| 10 | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the subfigure a, the HF coverage resulted in a complete dissociation. This lay along the correlation line.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is possible to observe a plateau close to 9.0 Hf-F/nm.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the HF coverage increases from 0 to 20 HF/nm2, the binding energy decreases to more negative values.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":11,"width":326,"height":361},{"panel_id":"b","x":361,"y":14,"width":314,"height":357},{"panel_id":"c","x":694,"y":14,"width":313,"height":357}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/Origin of enhanced thermal atomic layer etching of amorphous HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":1009,"height":372,"image_format":"jpeg","image_sha256":"8a351b2c4fba36f8a8263e32a7bb144a62b34095bc932f3fde332426303b17b4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_15.jpg","caption":"Figure 15. Experimental etch rates for the thermal ALE of $\\mathrm{HfO_2}$ and $\\mathrm{ZrO_2}$ using precursors HF and $\\mathrm{Sn(acac)}_2,^{4,9}\\mathrm{Al(CH_3)_3,^{4}AlCl(CH_3)_2,^{4,12}}$ $\\mathrm{SiCl_4}^4$ and $\\mathrm{TiCl_4}$ 111 (a) Etch rates for the thermal ALE of $\\mathrm{HfO_2}$ using HF and $\\mathrm{Sn(acac)}_2$ for the temperature range of $150 - 250^{\\circ}C$ b) Etch rates for the thermal ALE of $\\mathrm{HfO_2}$ and $\\mathrm{ZrO_2}$ using HF and $\\mathrm{Sn(acac)}_2 / \\mathrm{AlCl(CH_3)_2 / Al(CH_3)_3 / SiCl_4}$ at the temperatures shown. (c) Etch rates for the thermal ALE using HF and $\\mathrm{TiCl_4}$ of $\\mathrm{HfO_2}$ for the temperature range $200 - 300^{\\circ}C$ and $\\mathrm{ZrO_2}$ at $250^{\\circ}C$ d) Etch rates for the thermal ALE of $\\mathrm{HfO_2}$ and $\\mathrm{ZrO_2}$ using HF and $\\mathrm{AlCl(CH_3)_2}$ for the temperature range $200 - 300^{\\circ}C$","id":"test/atomic-layer-etching/simulation-usecase/25/figure_15","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_15","subset":"scatter-plot","split":"test","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"scatter plot"},{"panel_id":"d","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Etch rate for thermal ALE of HfO₂ using HF + Sn(acac)₂ increases from ~0.07 Å/cycle at 150 °C to a maximum of ~0.125 Å/cycle at 225 °C, then drops slightly at 250 °C (~0.115 Å/cycle). The temperature response is weakly non-monotonic with a clear peak near 225 °C.\"},{\"panel_id\":\"b\",\"text\":\"Single-temperature comparisons across precursor pairs show a wide spread in etch rate. HF + AlCl(CH₃)₂ at 250 °C is highest in this panel (~0.75 Å/cycle for HfO₂; ~0.95 Å/cycle for ZrO₂), while HF + Sn(acac)₂ at 200 °C is much lower (~0.05 for HfO₂; ~0.15 for ZrO₂). HF + Al(CH₃)₃ at 300 °C (HfO₂ point shown) is ~0.10 Å/cycle, and HF + SiCl₄ at 350 °C ranges from ~0.05 (HfO₂) to ~0.15 Å/cycle (ZrO₂).\"},{\"panel_id\":\"c\",\"text\":\"With HF + TiCl₄, etch rate increases with temperature from ~0.10 Å/cycle at 200 °C to ~0.58 Å/cycle at 300 °C for HfO₂. At 250 °C, ZrO₂ (~0.38 Å/cycle) is higher than HfO₂ (~0.29 Å/cycle), indicating a material-dependent etch response under the same precursor condition.\"},{\"panel_id\":\"d\",\"text\":\"With HF + AlCl(CH₃)₂, etch rate increases from 200 to 300 °C for both oxides, and ZrO₂ is consistently higher than HfO₂ at each temperature. Approximate values rise from ~0.35→~1.25 Å/cycle for HfO₂ and ~0.90→~1.60 Å/cycle for ZrO₂ over 200→300 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Precursor | Material | Temperature (°C) | Etch Rate (Å/cycle) |\\n|-----------|----------|------------------|---------------------|\\n| Hf / Sn(acac)2 (Red) | HfO₂ | 150 | ~0.07 |\\n| Hf / Sn(acac)2 (Red) | HfO₂ | 175 | ~0.085 |\\n| Hf / Sn(acac)2 (Red) | HfO₂ | 200 | ~0.115 |\\n| Hf / Sn(acac)2 (Red) | HfO₂ | 225 | ~0.125 (max) |\\n| Hf / Sn(acac)2 (Red) | HfO₂ | 250 | ~0.115 |\"},{\"panel_id\":\"b\",\"text\":\"| Precursor | Material | Temperature (°C) | Etch Rate (Å/cycle) |\\n|-----------|----------|------------------|---------------------|\\n| Hf / Sn(acac)2 (Red) | HfO₂ | 200 | ~0.05 |\\n| Hf / Sn(acac)2 (Red) | ZrO₂ | 200 | ~0.15 |\\n| Hf / AlCl(CH₃)₂ (Green) | HfO₂ | 250 | ~0.75 | \\n| Hf / AlCl(CH₃)₂ (Green) | ZrO₂ | 250 | ~0.95 | \\n| Hf / Al(CH₃)₃ (Blue) | HfO₂ | 300 | ~0.10 | \\n| Hf/ SiCl₄ (Purple) | HfO₂ | 350 | ~0.05 |\\n| Hf / SiCl₄ (Purple) | ZrO₂ | 350 | ~0.15 |\"},{\"panel_id\":\"c\",\"text\":\"| Precursor | Material | Temperature (°C) | Etch Rate (Å/cycle) |\\n|-----------|----------|------------------|---------------------|\\n| Hf / TiCl₄ (Orange) | HfO₂ | 200 | ~0.10 |\\n| Hf / TiCl₄ (Orange) | HfO₂ | 225 | ~0.18 |\\n| Hf / TiCl₄ (Orange) | HfO₂ | 250 | ~0.29 |\\n| Hf / TiCl₄ (Orange) | ZrO₂ | 250 | ~0.38 |\\n| Hf / TiCl₄ (Orange) | HfO₂ | 275 | ~0.46 |\\n| Hf / TiCl₄ (Orange) | HfO₂ | 300 | ~0.58 |\"},{\"panel_id\":\"d\",\"text\":\"| Precursor | Material | Temperature (°C) | Etch Rate (Å/cycle) |\\n|-----------|----------|------------------|---------------------|\\n| Hf / AlCl(CH₃)₂ (Green) | HfO₂ | 200 | ~0.35 |\\n| Hf / AlCl(CH₃)₂ (Green) | ZrO₂ | 200 | ~0.90 | \\n| Hf / AlCl(CH₃)₂ (Green) | HfO₂ | 225 | ~0.80 | \\n| Hf / AlCl(CH₃)₂ (Green) | ZrO₂ | 225 | ~1.18 | \\n| Hf / AlCl(CH₃)₂ (Green) | HfO₂ | 250 | ~0.98 |\\n| Hf / AlCl(CH₃)₂ (Green) | ZrO₂ | 250 | ~1.35 | \\n| Hf / AlCl(CH₃)₂ (Green) | HfO₂ | 275 | ~1.10 |\\n| Hf / AlCl(CH₃)₂ (Green) | ZrO₂ | 275 | ~1.50 |\\n| Hf / AlCl(CH₃)₂ (Green) | HfO₂ | 300 | ~1.25 | \\n| Hf / AlCl(CH₃)₂ (Green) | ZrO₂ | 300 | ~1.60 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ZrO₂.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate of HfO₂ using HF + TiCl₄ increases steadily and monotonically as the temperature is raised from 200 °C to 300 °C. The rate roughly doubles from ~0.29 Å/cycle at 250 °C to ~0.58 Å/cycle at 300 °C, indicating a strong thermal dependence for this etch chemistry within the studied range.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The data show an etch-rate maximum near 225 °C rather than a steady increase with temperature. That suggests there’s an operating window where the surface chemistry yields the largest net removal per cycle under HF + Sn(acac)₂. Running below the peak likely underdrives one of the steps, while running above it appears to reduce net etching, consistent with a narrower optimum rather than a broad Arrhenius-like rise.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes; by roughly 0.20 Å/cycle (~0.95 vs ~0.75 Å/cycle).\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":359,"height":306},{"panel_id":"b","x":363,"y":3,"width":496,"height":304},{"panel_id":"c","x":0,"y":311,"width":356,"height":309},{"panel_id":"d","x":352,"y":305,"width":512,"height":315}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_15.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":867,"height":622,"image_format":"jpeg","image_sha256":"590a621dd1a1ccf79290c7e61618aec2532440dbec80dd8a9f20e212c6907ce5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/scatter-plot/train/metadata.jsonl b/subsets/scatter-plot/train/metadata.jsonl index 321d7efdf1e9369a877e0af7d043819610a144a9..46685c916c025c0ccc1a54564f4867d14fd0bc26 100644 --- a/subsets/scatter-plot/train/metadata.jsonl +++ b/subsets/scatter-plot/train/metadata.jsonl @@ -1,78 +1,78 @@ -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_12_fig_8.jpg","caption":"Fig. 8. Tungsten film thickness deposited after three AB cycles versus number of $\\mathrm{WF}_6$ pulses at $425 \\mathrm{K}$ . The $\\mathrm{Si}_2\\mathrm{H}_6$ exposure of $40 \\mathrm{Si}_2\\mathrm{H}_6$ pulses during each AB cycle was sufficient for a complete $\\mathrm{Si}_2\\mathrm{H}_6$ half-reaction.","id":"train/atomic-layer-deposition/experimental-usecase/12/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/12/fig_8","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/J.W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":600,"height":609,"image_format":"jpeg","image_sha256":"4416339a5a164def601a15143b0bd86e76c005bf72af69681c9c27e054aec64b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":598,"height":608}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line plot shows the tungsten film thickness obtained after three AB cycles as a function of the number of WF₆ pulses at 425 K. The thickness reaches saturation after about 10 WF₆ pulses, indicating that additional pulses do not increase growth. The data also confirms that using 40 Si₂H₆ pulses in each AB cycle is sufficient to complete the Si₂H₆ half-reaction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of WF6 Pulses | Tungsten Film Thickness (Å) |\\n|---|---|\\n| 0 | 0 |\\n| 1 | 3 |\\n| 5 | 7 |\\n| 10 | 7.2 |\\n| 15 | 7.2 |\\n| 20 | 7.2 |\\n| 25 | 6.5 |\\n| 30 | 7.2 |\\n| 40 | 7.2 |\\n| 50 | 7.2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To account for minor process variations, a safe setpoint would be slightly above the threshold, such as 12–15 pulses. Programming anything less than 10 pulses risks incomplete surface coverage, while significantly more (e.g., >20) wastes precursor without adding thickness.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"5 Pulses (Slope Region): High precursor efficiency (low waste), but high risk of non-uniformity because growth is sensitive to local gas flux.\\n\\n50 Pulses (Deep Saturation): Confirms maximum uniformity and full coverage, but suffers from very low efficiency due to high precursor usage/waste.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plateau signifies that all available reactive surface sites (specifically the Si-H bonds established in the previous step) have been consumed and replaced by W-F species. Since WF6 cannot react with itself or the fluorinated surface it creates, the reaction chemically terminates. This site-limitation factor ensures the film thickness is defined strictly by the number of cycles, not the total precursor gas exposure.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The GPC is ~2.5 Å/cycle, so 8 cycles are required for a 20 Å liner.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_12_fig_9.jpg","caption":"Fig. 9. Tungsten film thickness deposited after three AB cycles versus number of $\\mathrm{Si}_2\\mathrm{H}_6$ pulses at $425 \\mathrm{K}$ . The $\\mathrm{WF}_6$ exposure of nine $\\mathrm{WF}_6$ pulses during each AB cycle was sufficient for a complete $\\mathrm{WF}_6$ half-reaction.","id":"train/atomic-layer-deposition/experimental-usecase/12/fig_9","sample_id":"atomic-layer-deposition/experimental-usecase/12/fig_9","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/J.W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":600,"height":603,"image_format":"jpeg","image_sha256":"8cbaa089799ee74d9375dffd2f4cc61dfa62031c8a346286999a72282fce7752","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":599,"height":598}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This line chart represents the tungsten(W) film thickness after 3 ALD- AB cycles as a function of the number of Si₂H₆ pulses per cycle (B-step), while the WF₆ exposure (A-step) is held constant at 9 pulses per cycle. It demonstrates that film growth requires a minimum number of Si₂H₆ pulses to complete the reaction cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Si₂H₆ Pulses | Tungsten Film Thickness (Å) |\\n|---|---|\\n| 0 | 0 |\\n| 4 | 5 |\\n| 12 | 7.5 |\\n| 24 | 8.1 |\\n| 48 | 7.4 |\\n| 60 | 8.1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"WF₆ Pulse\\n\\nPurge\\n\\nRepeat steps 1-2 until 9 total WF₆ pulses are delivered.\\n\\nSi₂H₆ Pulse\\n\\nPurge\\n\\nRepeat steps 4-5 a total of 30 times.\\nThe 9 WF₆ pulses ensure the surface is saturated, guaranteeing a complete and reproducible A-step half-reaction regardless of the subsequent B-step condition, isolating the effect of the Si₂H₆ dose.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Diborane (B₂H₆) is likely better for minimizing oxygen. B₂H₆ is a stronger reducing agent that can getter trace oxygen and water more effectively than Si₂H₆. The trade-off is that boron itself can incorporate as an impurity in the W film, potentially altering its electrical resistivity and stability, whereas silicon incorporation from Si₂H₆ may form a more benign tungsten silicide.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Thickness increases with Si₂H₆ pulses, then saturates. From 0 to ~10 pulses, thickness rises sharply because each pulse provides more reductant to convert the W–F surface layer into a metallic W film and regenerate the Si–H sites needed for the next WF₆ pulse. Insufficient Si₂H₆ leaves the surface partially fluorinated, preventing full tungsten deposition in the next cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the process must use a saturating Si₂H₆ dose (>20 pulses/cycle) to ensure complete surface reaction. To grow 100 Å, you would run the calculated number of full ALD cycles based on the saturated growth per cycle (~20 Å/3 cycles = ~6.7 Å/cycle). Consistency and conformality are achieved only when both half-reactions (9 WF₆ pulses, >20 Si₂H₆ pulses) are operated in their saturated regimes.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_16_fig_5.jpg","caption":"FIG. 5. Film growth rates as a function of $\\mathrm{Zr}$ precursor pulse length with ozone as the oxygen source. The pulsing sequence was $\\mathrm{x}$ $\\mathrm{slx} + 0.5$ sl1.0 sl1.5 s for $\\mathrm{Zr}$ pulselpurgel $\\mathrm{O_3}$ pulselpurge.","id":"train/atomic-layer-deposition/experimental-usecase/16/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/16/fig_5","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/Sanni Seppala et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":656,"height":555,"image_format":"jpeg","image_sha256":"5a29599c0702375ef9f357115da168d1219308d92e6aba95e424c3eef004fadf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":656,"height":553}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the growth rate of a material, when ozone is used as a precursor, as a function of Zr pulse length at different temperatures: Zr(Me₅Cp)(TEA) at 375°C and 300°C, Zr(Cp)(ᵗBuDAD)(OⁱPr) and Zr(MeCp)(TMEA) at 250°C. The growth rate for Zr(MeCp)(TMEA) continues to increase, others show self-limiting behaviour.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Zr pulse length (s) | Growth rate (Å/cycle) | Reagent | Temperature (°C) |\\n|---|---|---|---|\\n| 0,5 | 0,28 | Zr(Me_5Cp)(TEA) | 300 |\\n| 1,0 | 0,30 | Zr(Me_5Cp)(TEA) | 300 |\\n| 1,5 | 0,30 | Zr(Me_5Cp)(TEA) | 300 |\\n| 2,0 | 0,31 | Zr(Me_5Cp)(TEA) | 300 |\\n| 2,5 | 0,32 | Zr(Me_5Cp)(TEA) | 300 |\\n| 3,0 | 0,32 | Zr(Me_5Cp)(TEA) | 300 |\\n| 0,5 | 0,34 | Zr(Me_5Cp)(TEA) | 375 |\\n| 1,0 | 0,37 | Zr(Me_5Cp)(TEA) | 375 |\\n| 1,5 | 0,39 | Zr(Me_5Cp)(TEA) | 375 |\\n| 2,0 | 0,41 | Zr(Me_5Cp)(TEA) | 375 |\\n| 2,5 | 0,42 | Zr(Me_5Cp)(TEA) | 375 |\\n| 3,0 | 0,43 | Zr(Me_5Cp)(TEA) | 375 |\\n| 3,5 | 0,43 | Zr(Me_5Cp)(TEA) | 375 |\\n| 1,0 | 0,40 | Zr(Cp)(tBuDAD)(O^iPr) | 250 |\\n| 1,5 | 0,43 | Zr(Cp)(tBuDAD)(O^iPr) | 250 |\\n| 2,0 | 0,50 | Zr(Cp)(tBuDAD)(O^iPr) | 250 |\\n| 2,5 | 0,49 | Zr(Cp)(tBuDAD)(O^iPr) | 250 |\\n| 3,0 | 0,48 | Zr(Cp)(tBuDAD)(O^iPr) | 250 |\\n| 1,0 | 0,57 | Zr(MeCp)(TMEA) | 250 |\\n| 2,0 | 0,66 | Zr(MeCp)(TMEA) | 250 |\\n| 2,5 | 0,69 | Zr(MeCp)(TMEA) | 250 |\\n| 3,0 | 0,71 | Zr(MeCp)(TMEA) | 250 |\\n| 3,5 | 0,74 | Zr(MeCp)(TMEA) | 250 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No. The growth rate continues to rise as more precursor is dosed, the deposition is therefore likely influenced by CVD-like reactions or precursor decomposition. A self-limiting ALD growth would show a plateau.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The growth rate decreases by ~ 0.1 Å/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Zr(Cp)(ᵗBuDAD)(OⁱPr) and Zr(Me₅Cp)(TEA).\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_2_figure_1.jpg","caption":"Figure 1. Dependence of the platinum film growth rate on the $\\mathrm{MeCpPtMe}_3$ and air pulse times. The air pulse time in the $\\mathrm{MeCpPtMe}_3$ experiments was $1.5\\mathrm{s}$ and the $\\mathrm{MeCpPtMe}_3$ pulse time in the air pulse experiments was $0.5\\mathrm{s}$ .","id":"train/atomic-layer-deposition/experimental-usecase/2/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/2/figure_1","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":561,"height":428,"image_format":"jpeg","image_sha256":"0828deda4229832f1d1f0bbab33983d4d38bdb5f5318eb3261a0bc2bd36e568f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":4,"width":560,"height":424}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot compares the ALD growth rate of Pt as a function of pulse duration for two independent series: varying MeCpPtMe₃ pulse time at fixed air exposure and varying air pulse time at fixed MeCpPtMe₃ exposure. The MeCpPtMe₃-pulse series shows a modest increase from ~0.44 to ~0.50 Å/cycle with longer precursor pulses, while the air-pulse series shows growth rates in the ~0.36–0.46 Å/cycle range, largely insensitive to air pulse duration beyond ~1.5 s. Error bars highlight the experimental variation for each condition.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulse time (s) | MeCpPtMe₃ pulse series (Å cycle⁻¹) | Air pulse series (Å cycle⁻¹) |\\n|----------------|-----------------------------------|-------------------------------|\\n| 0.0 | ~0.44 | - | \\n| 0.5 | ~0.45 | - |\\n| 1.0 | ~0.50 | ~0.36 |\\n| 1.5 | ~0.49 | ~0.45 |\\n| 2.0 | - | ~0.45 |\\n| 2.5 | - | ~0.42 |\\n| 3.0 | - | ~0.46 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the MeCpPtMe₃ pulse duration increases the likelihood that all available surface reactive sites are exposed to the Pt precursor before purging. This reduces precursor starvation and moves the system toward surface saturation, which is reflected by the gradual increase in growth rate from ~0.44 to ~0.50 Å/cycle. Once saturation is approached, further increases in pulse time yield diminishing returns, consistent with self-limiting ALD behavior.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The MeCpPtMe₃ pulse-time series shows a stronger dependence, implying that precursor adsorption is more rate-limiting than the air oxidation step under these conditions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The relatively small and overlapping error bars indicate that the observed changes in growth rate are systematic rather than dominated by experimental noise. This strengthens confidence that the plateaus correspond to true saturation behavior rather than statistical scatter, particularly for the air-pulse series where growth rates remain nearly constant over a wide pulse-time range.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"By identifying the minimum pulse durations required to achieve saturation—about 1.0 s for MeCpPtMe₃ and 1.5 s for air—process engineers can avoid unnecessarily long pulses that increase cycle time without increasing growth per cycle. Operating at these saturation thresholds maximizes throughput while maintaining precise thickness control and film uniformity.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_2_figure_3.jpg","caption":"Figure 3. Thickness profiles of platinum films grown with short and long $\\mathrm{MeCpPtMe_3}$ pulses of 0.2 and $1.5\\mathrm{s}$ , respectively. The profile is measured along the gas flow direction at various distances from the leading edge of the substrate, that is, the edge closest to the precursor inlet.","id":"train/atomic-layer-deposition/experimental-usecase/2/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/2/figure_3","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":539,"height":375,"image_format":"jpeg","image_sha256":"a844597aa9312b4ebc9d80f5e9d8fd9fce5f4051797867321208966707912d8f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":535,"height":371}],"summarization":"[{\"panel_id\":\"b\",\"text\":\"Figure shows film thickness profiles for platinum ALD using short (0.2 s) and long (1.5 s) MeCpPtMe₃ precursor pulses as a function of substrate position along the gas-flow direction. Long precursor pulses yield consistently thicker films, reflecting greater precursor availability across the surface. Both profiles show a mild decrease in thickness with distance from the leading edge, indicating precursor depletion during transport. The small error bars suggest good reproducibility for both pulse conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Distance from leading edge (cm) | Long-pulse thickness (nm) | Short-pulse thickness (nm) |\\n|---------------------------------|---------------------------|----------------------------|\\n| 1 | ~78 ± 5 | ~66 ± 5 |\\n| 2 | ~76 ± 5 | ~64 ± 5 |\\n| 3 | ~72 ± 5 | ~63 ± 5 |\\n| 4 | ~68 ± 5 | ~60 ± 5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Longer MeCpPtMe₃ pulses increase the total precursor dose delivered to the substrate, allowing surface saturation to be reached over a larger downstream distance before precursor depletion occurs. This leads to higher and more uniform film thickness along the gas-flow direction. Shorter pulses provide insufficient precursor flux, causing earlier depletion and reduced surface coverage downstream, which manifests as thinner films and a stronger spatial gradient.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The short-pulse condition shows a stronger thickness decay.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The consistently greater thickness implies more complete surface saturation during each ALD cycle when long pulses are used. This suggests that the process is less transport-limited and that adsorption kinetics dominate over precursor delivery limitations, resulting in a higher effective growth per cycle across the substrate.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure demonstrates that longer precursor pulses improve thickness uniformity by overcoming transport limitations. For large-area wafers or high-aspect-ratio features, pulse durations must be sufficiently long to ensure uniform precursor delivery throughout the structure. These insights guide pulse-time optimization to balance throughput against uniformity requirements in industrial ALD reactors.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_6.jpg","caption":"Figure 6. Thickness of ALD ITO films versus number of cycles determined using VASE for films deposited on Si(100) at $275^{\\circ}C$ using $5\\%$ $\\mathrm{SnO_2}$ cycles.","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_6","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":586,"height":570,"image_format":"jpeg","image_sha256":"191f29ab6a4829e33b0ffaeca0d31ba945ff7dbf89798569da4f3e6dc5e424dd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":586,"height":570}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart displays a direct linear relationship between the number of ALD cycles and ITO film thickness, demonstrating consistent film growth per cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD Cycles | ITO Thickness (Å) |\\n|------------|-------------------|\\n| 0 | 0 |\\n| 100 | 200 |\\n| 200 | 400 |\\n| 300 | 600 |\\n| 400 | 800 |\\n| 500 | 1000 |\\n| 600 | 1200 |\\n| 700 | 1400 |\\n| 800 | 1600 |\\n| 900 | 1800 |\\n| 1000 | 2000 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ITO thickness increases linearly with the number of ALD cycles, indicating a consistent growth rate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Number of ALD cycles, ITO Thickness.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_8.jpg","caption":"Figure 8. Resistivity of ALD ITO films prepared on glass using $5\\%$ $\\mathrm{SnO_2}$ cycles measured by four-point probe versus (a) number of cycles at $275^{\\circ}C$ and (b) deposition temperature using 300 cycles.","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_8","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":1236,"height":625,"image_format":"jpeg","image_sha256":"85f4410281ead97e0c1e123ec7c69812887a9efb75af3b7523963e9b31baa1ed","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":0,"width":595,"height":623},{"panel_id":"b","x":657,"y":62,"width":579,"height":551}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows a sharp initial decrease in resistivity with increasing ALD cycles and ITO film thickness, plateauing at around 0.002 Ω·cm beyond 500 Å.\"},{\"panel_id\":\"b\",\"text\":\"The scatter plot shows a gradual decrease in resistivity with increasing deposition temperature, reaching a minimum at 350 °C\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD Cycles | ITO Thickness (Å) | Resistivity (Ohm·cm) |\\n|------------|-------------------|-----------------------|\\n| 0 | 0 | 0.015 |\\n| 100 | 100 | 0.002 |\\n| 200 | 200 | 0.002 |\\n| 300 | 300 | 0.002 |\\n| 400 | 400 | 0.002 |\\n| 500 | 500 | 0.002 |\\n| 600 | 600 | 0.002 |\\n| 700 | 700 | 0.002 |\\n| 800 | 800 | 0.002 |\\n| 900 | 900 | 0.002 |\\n| 1000 | 1000 | 0.002 |\"},{\"panel_id\":\"b\",\"text\":\"| Deposition Temperature (°C) | Resistivity (Ohm·cm) |\\n|-----------------------------|----------------------|\\n| 150 | 0.01 |\\n| 200 | 0.005 |\\n| 250 | 0.003 |\\n| 300 | 0.002 |\\n| 350 | 0.001 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"350 °C\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Resistivity decreases rapidly during early cycles and plateaus at ~0.002 Ω·cm after 500 Å film thickness.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"ALD cycle number, ITO thickness, Depostion temperature\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_9.jpg","caption":"Figure 9. Optical transmittance for ALD ITO films prepared on glass using 300 ALD cycles with $5\\%$ $\\mathrm{SnO_2}$ cycles versus deposition temperature. Optical transmittance is given as the average transmission over the wavelength range $370 - 1000\\mathrm{nm}$ .","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_9","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":583,"height":584,"image_format":"jpeg","image_sha256":"502bf42639e14dc078bee8d3edc500ed6c5d708792184b4881d7201ff5e30145","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":583,"height":584}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows that optical transmission increases with a higher percentage of Sn cycles, rising steeply at first before plateauing around 92%\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| % of Sn Cycles | Optical Transmission (%) |\\n|----------------|--------------------------|\\n| 0 | 80 |\\n| 1 | 82 |\\n| 3 | 87 |\\n| 5 | 88 |\\n| 10 | 92 |\\n| 15 | 92 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the percentage of Sn cycles increases, the optical transmission initially rises sharply. This rapid improvement occurs up to approximately 5–10% Sn cycles, indicating a significant enhancement in transparency with minimal Sn incorporation. Beyond this point, the curve begins to plateau, and further increases in Sn content do not yield substantial gains. The optical transmission stabilizes near 92%, suggesting a saturation point where additional Sn cycles have a negligible impact on optical performance. This trend implies that optimal transparency can be achieved with a relatively low Sn cycle percentage.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Optical transmission (%)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_12.jpg","caption":"Figure 12. Experimental and simulated $I - V$ curves of the OTS device. (a) $I - V$ characteristics by plotting $I_{\\mathrm{DUT}} - V_{\\mathrm{DUT}}$ . (b) $I - V$ characteristics for the $I_{\\mathrm{off}}$ region by voltage sweep. Both experiments were performed using devices fabricated via the ALD-DFM process.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_12","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_12","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":342,"image_format":"jpeg","image_sha256":"02ff121b5a035607e98b8138c1264cd8119cacc48148216f3577f68643586281","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":38,"width":344,"height":304},{"panel_id":"b","x":350,"y":41,"width":321,"height":302}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a scatter plot of current versus voltage, indicating a non-linear relationship where current increases exponentially with voltage.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays a scatter plot comparing experimental and simulated currents against voltage, highlighting a exponential increase in current with voltage.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Voltage (V) | Current (A) |\\n|---|---|\\n|0.5| 10^-4 |\\n|0.7| 10^-3 |\\n|0.9| 10^-2 |\\n|1.1| 2*10^-2 |\\n|1.3| 2.5*10^-2 |\\n|1.5| 2.5*10^-2 |\\n|1.7| 10^-4 |\\n|1.9| 10^-4 |\"},{\"panel_id\":\"b\",\"text\":\"| Voltage (V) | Current (A) |\\n|---|---|\\n|0| 10^-8 |\\n|0.5| 4*10^-7 |\\n|1| 10^-6 |\\n|1.5| 4*10^-6 |\\n|2| 10^-5 |\\n|2.5| 10^-3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"slightly below 1 V\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There seem to be a lot of datapoints where just noise is measured resulting in a huge spread in datapoints.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes mostly for low voltages the different types of data overlap, however the switching current is less accurately simulated.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10^-3 ampere\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_9.jpg","caption":"Figure 9. Resistivity-temperature experiments (top) and GAXRD patterns (bottom) of the as-deposited and annealed GeSe films grown through (a), (c) the conventional ALD process and (b), (d) the ALD-DFM process to verify the crystallization temperature.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_9","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"stacked spectra chart"},{"panel_id":"d","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":694,"image_format":"jpeg","image_sha256":"9059f64bc498b64dc9b2bf7cfde370eb7acfd6d03e50bcd1443c240976e54068","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":29,"y":53,"width":312,"height":307},{"panel_id":"b","x":362,"y":53,"width":310,"height":307},{"panel_id":"c","x":53,"y":393,"width":289,"height":300},{"panel_id":"d","x":383,"y":403,"width":288,"height":290}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The sheet resistance of ALD grown GeSe is plotted against temperature. There is a sharp decrease in resistance at around 337°C.\"},{\"panel_id\":\"b\",\"text\":\"The sheet resistance of DFM-ALD grown GeSe is plotted against temperature. There is a sharp decrease in resistance at around 348°C.\"},{\"panel_id\":\"c\",\"text\":\"X-ray diffraction patterns are shown for different temperatures, indicating changes in crystallinity for 340 and 350 degrees for ALD grown GeSe.\"},{\"panel_id\":\"d\",\"text\":\"X-ray diffraction patterns are shown for different temperatures, indicating changes in crystallinity for 350 degrees for ALD grown GeSe.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Sheet resistance (Ω/□) |\\n|---|---|\\n| 0 | 3*10^7 |\\n| 50 | 3*10^7 |\\n| 100 | 3*10^7 |\\n| 150 | 3*10^7 |\\n| 200 | 3*10^7 |\\n| 250 | 3*10^7 |\\n| 300 | 3*10^7 |\\n| 350 | 10^4 |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | Sheet resistance (Ω/□) |\\n|---|---|\\n| 0 | 3*10^7 |\\n| 50 | 3*10^7 |\\n| 100 | 3*10^7 |\\n| 150 | 3*10^7 |\\n| 200 | 3*10^7 |\\n| 250 | 3*10^7 |\\n| 300 | 3*10^7 |\\n| 350 | 10^4 |\"},{\"panel_id\":\"c\",\"text\":\"| 2θ (°) | Intensity (A.U.) |\\n|---|---|\\n| 20 | - |\\n| 25 | - |\\n| 30 | - |\\n| 32 | Peak for 340 and 350 degrees|\\n| 40 | - |\\n| 45 | - |\\n| 50 | - |\"},{\"panel_id\":\"d\",\"text\":\"| 2θ (°) | Intensity (A.U.) |\\n|---|---|\\n| 20 | - |\\n| 25 | - |\\n| 30 | - |\\n| 32 | Peak for 350 degrees|\\n| 40 | - |\\n| 45 | - |\\n| 50 | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The material is more conductive in crystalline state, at higher temperatures the material is more crystalline. Also for these high temperatures lower sheet resistances are measured.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There are two peaks\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"By putting a sample in a RTA or rapid thermal anneal tool.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"348 degrees Celcius\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_29_figure_6.jpg","caption":"Figure 6. Ellipsometric measurements of the tungsten nitride film thickness deposited by three AB cycles vs. $\\mathrm{NH}_3$ exposure at $600~\\mathrm{K}$ . A $\\mathrm{WF}_6$ exposure of $4300~\\mathrm{L}$ was sufficient for a complete $\\mathrm{WF}_6$ half- reaction at $600~\\mathrm{K}$ .","id":"train/atomic-layer-deposition/experimental-usecase/29/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/29/figure_6","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/J. W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":666,"height":647,"image_format":"jpeg","image_sha256":"fc4c5da4324f2b2514ab11de50dded83c92060fa1377bf652550e43fc3d06299","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":663,"height":643}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The graph shows the relationship between NH₃ exposure and film thickness at 600 K with 3 AB cycles. The film thickness increases rapidly initially and then plateaus.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| NH₃ Exposure (L) | Film Thickness (Å) |\\n|---|---|\\n| 0 | 0 |\\n| 1000 | 1 |\\n| 2000 | 2 |\\n| 3000 | 3 |\\n| 4000 | 4 |\\n| 5000 | 6 |\\n| 6000 | 7 |\\n| 7000 | 8 |\\n| 8000 | 8 |\\n| 9000 | 8 |\\n| 10000 | 8 |\\n| 11000 | 8 |\\n| 12000 | 8 |\\n| 13000 | 8 |\\n| 14000 | 8 |\\n| 15000 | 8 |\\n| 16000 | 8 |\\n| 17000 | 8 |\\n| 18000 | 8 |\\n| 19000 | 8 |\\n| 20000 | 8 |\\n| 21000 | 8 |\\n| 22000 | 8 |\\n| 23000 | 8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After about 10,000 L.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"7 Å.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_29_figure_7.jpg","caption":"Figure 7. Ellipsometric measurements of the tungsten nitride film thickness deposited by three AB cycles vs. $\\mathrm{WF}_6$ exposure at $600~\\mathrm{K}$ . A $\\mathrm{NH}_3$ exposure of $12,000~\\mathrm{L}$ was sufficient for a complete $\\mathrm{NH}_3$ half- reaction at $600~\\mathrm{K}$ .","id":"train/atomic-layer-deposition/experimental-usecase/29/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/29/figure_7","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/J. W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":658,"height":650,"image_format":"jpeg","image_sha256":"effb04facf8a3c982346fb17ee8cfd7a7a514ab1b5d6dd444b3cf0c489c16fcd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":652,"height":646}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between the exposure of WF₆ and film thickness at 3 AB cycles and a temperature of 600 K.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| WF₆ Exposure (L) | Film Thickness (Å) |\\n|---|---|\\n| 0 | 0 |\\n| 1000 | 1 |\\n| 2000 | 2 |\\n| 3000 | 3 |\\n| 6000 | 8 |\\n| 12000 | 8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"12,000 L.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 4 Å.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After about 3,000 L.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 8 Å.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_32_figure_1.jpg","caption":"Figure 1. Growth rates of thermal ALD $\\mathrm{Ta_2O_5}$ as a function of PDMAT exposure time $(t_{\\mathrm{s}})$ on $\\mathrm{Si(001)}$ substrate at $T_{\\mathrm{s}} = 250^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/32/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/32/figure_1","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/W. J. Maeng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":683,"height":528,"image_format":"jpeg","image_sha256":"5d4764f0f32aa9a45efed33704aa21a226f61a5846cccb39c936e51ba3491bae","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":7,"width":677,"height":521}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows growth rate of thermal ALD Ta₂O₅ as a function of PDMAT exposure time at 250°C. The growth rate increases rapidly at short exposure times and saturates at approximately 0.85 Å/cycle for t_s ≥ 1 s, demonstrating self-limiting adsorption characteristic of ideal ALD behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| t_s (s) | Growth rate (Å/cycle) |\\n|---|---|\\n| 0 | 0 |\\n| 0.5 | 0.7 |\\n| 1 | 0.8 |\\n| 1.5 | 0.8 |\\n| 2 | 0.8 |\\n| 2.5 | 0.8 |\\n| 3 | 0.8 |\\n| 3.5 | 0.8 |\\n| 4 | 0.8 |\\n| 4.5 | 0.8 |\\n| 5 | 0.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The growth rate increases steeply at short PDMAT exposure times, rising from near zero to about 0.7 Å/cycle at 0.5 s. Beyond 1 s of exposure, the growth rate plateaus at approximately 0.85 Å/cycle. This saturation behavior demonstrates self-limiting adsorption of the PDMAT precursor, which is the defining characteristic of an ideal ALD process.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 1 second.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The 0.85 Å/cycle growth rate is almost twice that reported for ethoxide or chloride precursors (both ~0.45 Å/cycle).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Purge time (t_p = 3 s), water reactant exposure time (t_r = 3 s), substrate temperature (T_s = 250°C).\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_32_figure_4.jpg","caption":"Figure 4. Growth rates of $\\mathrm{TiO_2}$ as a function of TDMAT exposure time on Si(001) substrate at $T_{\\mathrm{s}} = 200^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/32/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/32/figure_4","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/W. J. Maeng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":661,"height":497,"image_format":"jpeg","image_sha256":"b820e3792ed88eb26c1d05640a79b0c38aa6249151fc408441a5a7ceafbd462c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":2,"width":670,"height":944}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows growth rate of thermal ALD TiO₂ as a function of TDMAT exposure time at 200°C. Unlike Ta₂O₅ from PDMAT, the growth rate does not saturate but continues to increase with exposure time, indicating incomplete self-limiting behavior. This non-ideal ALD characteristic is attributed to the low thermal decomposition temperature of TDMAT (~180°C).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| t_S (s) | Growth rate (Å/cycle) |\\n|---|---|\\n| 0 | 0 |\\n| 1 | 1.5 |\\n| 2 | 2 |\\n| 3 | 2.5 |\\n| 4 | 3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. Unlike Ta₂O₅ ALD from PDMAT, which shows clear saturation above 1 s exposure time, the TiO₂ growth rate from TDMAT continues to increase throughout the tested range up to 7 s. Although some slowdown occurs above 1 s, true saturation is never achieved. This indicates that TDMAT does not adsorb with perfect self-limitation at this temperature.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The low thermal decomposition temperature of TDMAT, reported to be approximately 180°C, which is below the growth temperature of 200°C used in this experiment.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At t_s = 2 s, the growth rate is approximately 2.1 Å/cycle. This is significantly higher than values reported for other precursors such as titanium methoxide (0.5 Å/cycle) and titanium chloride (0.75 Å/cycle). However, the higher rate partly reflects the non-ideal CVD contribution rather than pure ALD growth.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TDMAT precursor exposure time in seconds.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_33_figure_5.jpg","caption":"Figure 5 Dependence of the saturated ALD cobalt (a) and copper (b) thicknesses per cycle, as a function of the substrate temperature.","id":"train/atomic-layer-deposition/experimental-usecase/33/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/33/figure_5","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/BOOYONG S. LIM et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":694,"height":1070,"image_format":"jpeg","image_sha256":"790c35df622f8449764bda50eb4f2b4ac5eb78446840dbcbf024c508850997e6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":12,"y":8,"width":681,"height":533},{"panel_id":"b","x":15,"y":569,"width":666,"height":491}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares the dependence of ALD growth rate on substrate temperature for two different processes or materials. In subfigure (a), the growth rate increases steadily from approximately 0.01 Å/cycle at 260 °C to 0.12 Å/cycle at 340 °C, suggesting a thermally activated process with relatively linear behavior in this temperature range.\"},{\"panel_id\":\"b\",\"text\":\"In subfigure (b), the growth rate follows a sigmoidal trend, increasing more sharply between 200 °C and 280 °C, indicating a possible transition from a kinetically limited regime to a more saturated or efficient growth regime. Both plots highlight the strong influence of temperature on film growth dynamics, with potential implications for process window optimisation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Substrate temperature (°C) | Growth rate (Å per cycle) |\\n|----------------------------|----------------------------|\\n| 260 | 0.01 |\\n| 280 | 0.03 |\\n| 300 | 0.06 |\\n| 320 | 0.09 |\\n| 340 | 0.12 |\"},{\"panel_id\":\"b\",\"text\":\"| Substrate temperature (°C) | Growth rate (Å per cycle) |\\n|----------------------------|----------------------------|\\n| 160 | 0.0 |\\n| 200 | 0.1 |\\n| 220 | 0.2 |\\n| 240 | 0.35 |\\n| 280 | 0.5 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plots suggest that different ALD processes or chemistries have distinct thermal activation behaviors. In (a), the steady increase in growth rate with temperature implies a broad and controllable window, which is advantageous for uniform deposition. In contrast, the sigmoidal trend in (b) indicates that below a certain threshold (~200 °C), the process is kinetically limited, but rapidly becomes efficient above this temperature. This means that process engineers may need to operate within a narrower high-temperature window for maximum efficiency, potentially requiring more precise thermal control. Understanding these trends helps optimize reactor conditions for consistent film quality and throughput\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"320 °C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Higher temperatures enhance precursor reactivity, improve byproduct desorption\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_35_figure_2.jpg","caption":"Figure 2. Growth rate as a function of (a) $\\mathrm{SbCl}_3$ and (b) $(\\mathrm{Et}_3\\mathrm{Si})_2\\mathrm{Te}$ pulse length for $\\mathrm{Sb}_2\\mathrm{Te}_3$ films deposited at $60^{\\circ}\\mathrm{C}$ . The other precursor pulse lengths were kept at $1.0~\\mathrm{s}$ and all the purge lengths at $2.0~\\mathrm{s}$ .","id":"train/atomic-layer-deposition/experimental-usecase/35/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/35/figure_2","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/Viljami Pore et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":639,"height":239,"image_format":"jpeg","image_sha256":"30626e05b6895f64741769959d5203206e736b46bae891424907821887ddfb29","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":9,"width":304,"height":230},{"panel_id":"b","x":336,"y":9,"width":303,"height":230}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The growth rate of a material increases with increasing SbCl₃ pulse length up to a certain point and then plateaus.\"},{\"panel_id\":\"b\",\"text\":\"The growth rate of a material increases gradually with increasing (Et₃Si)₂Te pulse length, but shows subsaturation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| SbCl₃ pulse length (s) | Growth rate (Å/cycle) |\\n|---|---|\\n| 0.0 | 0.0 |\\n|0.2|0.3|\\n| 0.5 | 0.6 |\\n| 1.0 | 0.6 |\\n| 2.0 | 0.6 |\"},{\"panel_id\":\"b\",\"text\":\"| (Et₃Si)₂Te pulse length (s) | Growth rate (Å/cycle) |\\n|---|---|\\n| 0.0 | 0.0 |\\n|0.2|0.0|\\n| 0.5 | 0.45 |\\n| 1.0 | 0.6 |\\n| 1.5 | 0.7 |\\n| 2.0 | 0.6 |\\n| 3.0 | 0.65 |\\n| 4.0 | 0.7 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.6 angstrom per cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No it does not, there seems to be a form of softsaturation, where there is still an increase in growth rate for ever increasing pulse length.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.6 angstrom per cycle\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_42_figure_3.jpg","caption":"Figure 3. ALD saturation curve for 1 as the pulse length of 1 was varied.","id":"train/atomic-layer-deposition/experimental-usecase/42/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/42/figure_3","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/Coyle et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":564,"height":287,"image_format":"jpeg","image_sha256":"df7f976113482658f4df2439bc1b11b8f8f6f3741ef40d2b7fed7f8946901bcf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":560,"height":284}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot image represents the growth rate (in A/cycle) against pulse length (in seconds). There seems to be no growth till 2 secs and it seems to increase only after 3 secs and reaches a peak at 5 secs and slightly decreases. This saturation is the identity of a self-limiting ALD process, where increasing the exposure time beyond a certain point no longer increases thickness, confirming complete surface reaction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| pulse length (s) | growth rate (A/cycle) |\\n|---|---|\\n| 1 | 0 |\\n| 2 | 0 |\\n| 3 | 0.15 |\\n| 4 | 0.2 |\\n| 5 | 0.22 |\\n| 6 | 0.21 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Step 1: Pulse of Compound 1 (vapor) onto the hot substrate \\nStep 2: 3 s purge with N₂ \\nStep 3: 6 s pulse of H₂ plasma \\nStep 4: Second N₂ purge. Repeat.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It increased until it reached a plateau at 0.2 Å/cycle after a 4 s pulse. Shorter pulses (1–2 s) gave no measurable thickness.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The surface became fully covered with precursor after 4 s; longer pulses couldn’t add more copper because all reaction sites were occupied a sign of self-limiting ALD behavior.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mostly yes—EDS showed it was mainly copper metal with <5% carbon impurity. The growth rate (0.2 Å/cycle) is within the typical range for copper ALD, making it potentially useful for chip interconnects or barrier layers.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_45_figure_4.jpg","caption":"Figure 4. (Color online) The growth per cycle for remote plasma and thermal ALD of Pt and remote plasma ALD of $\\mathrm{PtO_2}$ as a function of the substrate temperature. At $100^{\\circ}\\mathrm{C}$ the growth rate of the remote plasma process including a $\\mathrm{H}_{2}$ gas exposure step in the ALD cycle is shown. For thermal ALD of $\\mathrm{Pt}$ deposition took place on $10 \\mathrm{nm}$ thick $\\mathrm{Pt}$ starting surfaces prepared by remote plasma ALD at $300^{\\circ}\\mathrm{C}$ The lines serve as guides to the eye.","id":"train/atomic-layer-deposition/experimental-usecase/45/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/45/figure_4","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":605,"height":464,"image_format":"jpeg","image_sha256":"3e6912ef0fd19dbc194f0fac994cf8183223dedb2a03bba9cef87d7d44e7e5b6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":597,"height":458}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the growth per cycle of different ALD processes (Thermal ALD Pt , Remote plasma ALD Pt , Remote plasma ALD PtO2) at varying deposition temperatures. Remote plasma Pt ALD yields a relatively weak temperature dependence, whereas thermal ALD Pt shows little growth at lower temperatures and increases sharply only above ~200 °C. Growth per cycle decreases with temperature for remote plasma PtO2 ALD.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition temperature (°C) | Process | Growth per cycle (nm/cycle) |\\n|---|---|---|\\n| 150 | Thermal ALD Pt | 0.001 |\\n| 200 | Thermal ALD Pt | 0.01 |\\n| 225 | Thermal ALD Pt | 0.035 |\\n| 250 | Thermal ALD Pt | 0.037 |\\n| 300 | Thermal ALD Pt | 0.044 |\\n| 150 | Thermal ALD Pt | 0.001 |\\n| 100 | Remote plasma ALD Pt with H2 step | 0.038 |\\n| 200 | Remote plasma ALD Pt | 0.044 |\\n| 300 | Remote plasma ALD Pt | 0.046 |\\n| 100 | Remote plasma ALD PtO2 | 0.06 |\\n| 200 | Remote plasma ALD PtO2 | 0.057 |\\n| 300 | Remote plasma ALD PtO2 | 0.047 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thermal ALD Pt.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Temperatures around ~225–300 °C are closest to an ideal ALD window for thermal Pt ALD. In this range, the measured growth per cycle changes only slightly (within the error bars), indicating relatively stable, self-limited behavior. At lower temperatures, the growth rate is changing rapidly.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Remote plasma ALD Pt is the least temperature-sensitive between 200 and 300 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"At 200 °C, the values rank as:\\n1. Remote plasma ALD PtO₂ (~0.058–0.060 nm/cycle)\\n2. Remote plasma ALD Pt (~0.045 nm/cycle)\\n3. Thermal ALD Pt (~0.01–0.02 nm/cycle)\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_49_figure_1.jpg","caption":"Figure 1. a) The film thickness of the $\\mathrm{MoS_2}$ film deposited at different temperatures ranging from 175 to $300^{\\circ}C$ The thickness of 50 ALD cycles $\\mathrm{MoS_2}$ film as a function of the b) $\\mathsf{H}_2\\mathsf{S}$ exposure time, c) dose time, and d) exposure time of $\\mathsf{C}_7\\mathsf{H}_8\\mathsf{Mo}(\\mathsf{CO})_3$ e) Spectroscopic ellipsometry curves for $\\mathrm{MoS_2}$ films deposited with varying ALD cycles (25, 50, 100, 200, and 300). f) There is a linear dependence between the number of ALD cycles and the deposited film thickness. The ALD reaction temperature was $250^{\\circ}C$ for all parameter variations except (a).","id":"train/atomic-layer-deposition/experimental-usecase/49/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/49/figure_1","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"},{"panel_id":"e","label":"multiple line chart"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"d","label":"scatter plot"},{"panel_id":"f","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/Shen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":1372,"height":709,"image_format":"jpeg","image_sha256":"534498c7646df77586a9d45fcf8f97347ad43e1825c35ebf7b4bc7b39c31182d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":456,"height":350},{"panel_id":"b","x":5,"y":358,"width":450,"height":345},{"panel_id":"c","x":471,"y":2,"width":449,"height":354},{"panel_id":"d","x":471,"y":362,"width":450,"height":343},{"panel_id":"e","x":922,"y":4,"width":447,"height":354},{"panel_id":"f","x":931,"y":357,"width":438,"height":347}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This multi-panel figure characterizes the Atomic Layer Deposition (ALD) of MoS₂ films, showing how thickness depends on various parameters such as (a) temperature, (b) H₂S exposure time, (c) precursor dose time, (d) Mo-precursor exposure time, (e) optical properties versus cycles, and (f) linear thickness growth with cycle number. The scatter plot shows the relationship between reaction temperature and layer thickness after 100 ALD cycles. The film thickness after 100 cycles peaks at approximately 250 °C (~9 nm), defining the optimal ALD window. Below 225 °C, growth is slow due to kinetic limitations, while above 275 °C, the thickness drops sharply, likely due to desorption or precursor decomposition.\"},{\"panel_id\":\"b\",\"text\":\"The scatter plot shows the relationship between H₂S exposure time and layer thickness after 50 ALD cycles. The thickness saturates at approximately 30 s exposure time.\"},{\"panel_id\":\"c\",\"text\":\"The scatter plot illustrates the effect of C₇H₈Mo(CO)₃ dose time on layer thickness after 50 ALD cycles. The growth saturates at approximately 0.8 s dose time.\"},{\"panel_id\":\"d\",\"text\":\"The scatter plot illustrates the effect of C₇H₈Mo(CO)₃ exposure time on layer thickness after 50 ALD cycles. The thickness shows a peak at 20 s, followed by a decrease, suggesting possible etching or desorption at very long exposure times.\"},{\"panel_id\":\"e\",\"text\":\"The line chart depicts the change in ellipsometric delta (Δ) with respect to wavelength. The delta parameter shifts monotonically with increasing ALD cycles.\"},{\"panel_id\":\"f\",\"text\":\"The scatter plot shows the linear relationship between ALD cycle number and layer thickness. The graph confirms a highly linear growth per cycle (GPC) of 0.11 nm/cycle with R² = 0.994, demonstrating that the process is stable and self-limiting.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Temperature (°C) | Layer Thickness After 100 ALD Cycles (nm) |\\n|---|---|\\n| 175 | 0.7 |\\n| 200 | 3 |\\n| 225 | 8 |\\n| 250 | 9 |\\n| 275 | 7.8 |\\n| 285 | 9.1 |\\n| 300 | 4 |\"},{\"panel_id\":\"b\",\"text\":\"| H2S Exposure Time (s) | Layer Thickness After 50 ALD Cycles (nm) |\\n|---|---|\\n| 0.1 | 0.2 |\\n| 1 | 2 |\\n| 5 | 3.1 |\\n| 10 | 3.3 |\\n| 30 | 4.7 |\\n| 40 | 4 |\\n| 60 | 4.7 |\"},{\"panel_id\":\"c\",\"text\":\"| C7H8Mo(CO)3 Dose Time (s) | Layer Thickness After 50 ALD Cycles (nm) |\\n|---|---|\\n| 0 | 0 |\\n| 0.25 | 3 |\\n| 0.5 | 4.2 |\\n| 0.75 | 4.8 |\\n| 1 | 4.7 |\\n| 1.5 | 5.1 |\"},{\"panel_id\":\"d\",\"text\":\"| C7H8Mo(CO)3 Exposure Time (s) | Layer Thickness After 50 ALD Cycles (nm) |\\n|---|---|\\n| 5 | 2.7 |\\n| 10 | 4.9 |\\n| 20 | 6.5 |\\n| 30 | 4.7 |\"},{\"panel_id\":\"e\",\"text\":\"| Wavelength (nm) | Delta (degree) | Number of cycles |\\n|---|---|---|\\n| 370 | 164 | 0 cycle |\\n| 370 | 158 | 25 cycle |\\n| 370 | 145 | 50 cycle |\\n| 370 | 135 | 100 cycle |\\n| 370 | 105 | 200 cycle |\\n| 370 | 72 | 300 cycle |\\n| 400 | 167 | 0 cycle |\\n| 400 | 163 | 25 cycle |\\n| 400 | 150 | 50 cycle |\\n| 400 | 140 | 100 cycle |\\n| 400 | 110 | 200 cycle |\\n| 400 | 83 | 300 cycle |\\n| 500 | 170 | 0 cycle |\\n| 500 | 166 | 25 cycle |\\n| 500 | 154 | 50 cycle |\\n| 500 | 143 | 100 cycle |\\n| 500 | 115 | 200 cycle |\\n| 500 | 93 | 300 cycle |\\n| 600 | 171 | 0 cycle |\\n| 600 | 169 | 25 cycle |\\n| 600 | 157 | 50 cycle |\\n| 600 | 147 | 100 cycle |\\n| 600 | 120 | 200 cycle |\\n| 600 | 98 | 300 cycle |\\n| 700 | 173 | 0 cycle |\\n| 700 | 171 | 25 cycle |\\n| 700 | 160 | 50 cycle |\\n| 700 | 149 | 100 cycle |\\n| 700 | 124 | 200 cycle |\\n| 700 | 104 | 300 cycle |\\n| 800 | -- | 0 cycle |\\n| 800 | -- | 25 cycle |\\n| 800 | -- | 50 cycle |\\n| 800 | -- | 100 cycle |\\n| 800 | -- | 200 cycle |\\n| 800 | 109 | 300 cycle |\\n| 900 | -- | 0 cycle |\\n| 900 | -- | 25 cycle |\\n| 900 | -- | 50 cycle |\\n| 900 | -- | 100 cycle |\\n| 900 | -- | 200 cycle |\\n| 900 | 114 | 300 cycle |\"},{\"panel_id\":\"f\",\"text\":\"| ALD Cycle Number | Layer Thickness (nm) |\\n|---|---|\\n| 0 | 0 |\\n| 25 | 1 |\\n| 50 | 4 |\\n| 101 | 8 |\\n| 200 | 19 |\\n| 301 | 33 |\"}]","vqa":"[{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It confirms precise, atomic-level thickness control and excellent film uniformity. These characteristics are essential for reliably fabricating thin MoS₂ channels or barriers in scalable transistors and memory devices.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The optimal temperature is 250°C (highest thickness, stable growth). The film thickness drops significantly to <4 nm (compared to ~9 nm at 250°C). This indicates that 300°C is outside the stable ALD window, likely causing precursor desorption or parasitic etching, resulting in a much thinner film than intended.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing dose saturates the surface coverage (good). However, extending the residence time (exposure) beyond 20s causes a loss in thickness (bad).\\nThis suggests a competing desorption or etching mechanism at long exposures. The process engineer cannot simply set an arbitrarily long exposure time \\\"just to be safe.\\\" They must choose a value (e.g., 20s) that ensures saturation without crossing into the regime where the film begins to degrade or desorb.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies a Nucleation Delay. In an ideal scenario, the line would pass through zero. A negative intercept signifies that during the first ~10 cycles, virtually no film was deposited (incubation period). The precursor struggled to nucleate on the initial substrate surface, requiring several cycles to establish a seed layer before the steady-state growth rate of 0.11 nm/cycle was achieved.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_50_fig_11.jpg","caption":"Fig. 11 Optical band gap $(E_{\\mathrm{g,opt}})$ as a function of DF for ZnO:X $(X = \\mathsf{Al},\\mathsf{B})$ TIB was used as a B source while DMAI and TMA were used as Al sources. The films were deposited on $\\mathrm{SiO_2}$ substrates at $150^{\\circ}C$","id":"train/atomic-layer-deposition/experimental-usecase/50/fig_11","sample_id":"atomic-layer-deposition/experimental-usecase/50/fig_11","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/Garcia-Alonso et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":369,"height":297,"image_format":"jpeg","image_sha256":"a8a021cd8363e79dce5ac504bc29f2859c22b4a4c977fc9c76fb53fac3d99e59","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":7,"width":365,"height":289}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the linear relationship between doping fraction (DF) and the optical band gap (Eg_opt) for three different materials: TIB, DMAI, and TMA.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Doping fraction, DF | TIB | DMAI | TMA |\\n|---|---|---|---|\\n| 0.00 | 3.25 | 3.25 | 3.25 |\\n| 0.02 | 3.30 | 3.30 | 3.30 |\\n| 0.04 | 3.35 | 3.35 | 3.35 |\\n| 0.06 | 3.40 | 3.40 | 3.40 |\\n| 0.08 | 3.45 | 3.45 | 3.45 |\\n| 0.10 | 3.50 | 3.50 | 3.50 |\\n| 0.12 | 3.55 | 3.55 | 3.55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The increase in bandgap can be attributed to the Burstein–Moss shift, but only for the range of doping values for which the carrier concentration n increases\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The optical band gap (Eg,opt) of the ZnO:X films was extracted from so-called Tauc plots (i.e., (e2E^2)^2 as a function\\nof the photon energy E, where e2 is the imaginary part of the dielectric function extracted from the SE data\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For ZnO:B, as well as for ZnO:Al, the optical band gap increases with increasing doping fraction. This increase can be attributed to the Burstein–Moss shift, for the range of DF values for which the carrier concentration n increases. For higher DF values (DF > 0.034), in the case of ZnO:B and ZnO:Al (DMAI), the increase in the optical bandgap can be attributed to effects related to the grain size, strain and other types of imperfections.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_50_fig_2.jpg","caption":"Fig. 2 Saturation curves of the $\\mathrm{ZnO:}$ B process $(m = 4)$ at $150^{\\circ}C$ (a) TIB precursor dose, (b) TIB precursor purge, (c) $\\mathsf{DI - H}_2\\mathsf{O}$ dose, and (d) $\\mathsf{DI - H}_2\\mathsf{O}$ purge. The growth per supercycle (GPSC) for each condition was averaged over 10 supercycles. The $\\mathrm{ZnO}$ standard conditions are specified elsewhere (50 ms DEZ dose, 5 s purge, 20 ms $\\mathsf{H}_2\\mathsf{O}$ dose, 6 s purge) and the process saturated at a GPC of $0.2\\mathrm{nm}$ per cycle for an intrinsic $\\mathrm{ZnO}$ film deposited at $150^{\\circ}C$","id":"train/atomic-layer-deposition/experimental-usecase/50/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/50/fig_2","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"},{"panel_id":"d","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/Garcia-Alonso et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":880,"height":644,"image_format":"jpeg","image_sha256":"6f3a643fefa5b48548c14541558e555175a04cb9a4ba495de7d63407ec180772","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":-1,"width":458,"height":317},{"panel_id":"b","x":489,"y":14,"width":391,"height":306},{"panel_id":"c","x":7,"y":330,"width":455,"height":308},{"panel_id":"d","x":494,"y":336,"width":385,"height":304}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image plots GPSC as a function of TIB dose\"},{\"panel_id\":\"b\",\"text\":\"The image plots GPSC as a function of TIB purge time\"},{\"panel_id\":\"c\",\"text\":\"The image plots GPSC as a function of DI-H₂O dose\"},{\"panel_id\":\"d\",\"text\":\"The image plots GPSC as a function of DI-H₂O purge time\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TIB dose (ms) | GPSC (nm/supercycle) |\\n|---|---|\\n| 0 | 0.7 |\\n| 10 | 0.6 |\\n| 20 | 0.6 |\\n| 30 | 0.6 |\\n| 40 | 0.6 |\\n| 50 | 0.6 |\\n| 60 | 0.6 |\\n| 70 | 0.6 |\\n| 80 | 0.6 |\"},{\"panel_id\":\"b\",\"text\":\"| TIB purge (s) | GPSC (nm/supercycle) |\\n|---|---|\\n| 0 | 0.6 |\\n| 1 | 0.6 |\\n| 2 | 0.6 |\\n| 3 | 0.6 |\\n| 4 | 0.6 |\\n| 5 | 0.6 |\\n| 6 | 0.6 |\\n| 7 | 0.6 |\\n| 8 | 0.6 |\"},{\"panel_id\":\"c\",\"text\":\"| DI-H₂O dose (ms) | GPSC (nm/supercycle) |\\n|---|---|\\n| 0 | 0.5 |\\n| 10 | 0.6 |\\n| 20 | 0.6 |\\n| 30 | 0.6 |\\n| 40 | 0.6 |\\n| 50 | 0.6 |\\n| 60 | 0.6 |\\n| 70 | 0.6 |\\n| 80 | 0.6 |\\n| 90 | 0.6 |\\n| 100 | 0.6 |\"},{\"panel_id\":\"d\",\"text\":\"| DI-H₂O purge (s) | GPSC (nm/supercycle) |\\n|---|---|\\n| 0 | 0.6 |\\n| 1 | 0.6 |\\n| 2 | 0.6 |\\n| 3 | 0.6 |\\n| 4 | 0.6 |\\n| 5 | 0.6 |\\n| 6 | 0.6 |\\n| 7 | 0.6 |\\n| 8 | 0.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reduction in GSPC with increasing TIB dose observed in a could be the result of a slight etching of the ZnO by the TIB but it could also be due to the inhibition of ZnO growth after a TIB pulse, as observed for DMAI. However, the experiment carried out in which the film growth after every cycle (either DEZ or TIB cycle), monitored by spectroscopic ellipsometry, showed the change in thickness as a function of the number of cycles deduced from the measurements. From that it is clear that the ZnO was not etched by TIB (i.e., the film thickness did not decrease after one B cycle) but that the TIB\\npulse led to an inhibition in the subsequent ZnO film growth. This growth inhibition took place during several cycles following the TIB pulse, and could also be seen from a second experiment\\nin which a supercycle with m = 19 was used (i.e., a total of 20 cycles comprising 19 ZnO + 1 TIB), it was evident that one TIB pulse affected the ZnO during many cycles.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Growth per super cycle as this ALD process involves doping ZnO with boron. The saturation curves for the gas exposures and purges of the B cycle of an ALD supercycle corresponding to four DEZ\\ncycles and one TIB cycle for the ZnO:B process. These data were obtained by varying the duration of one of the ALD cycle steps, while keeping the duration of other steps sufficiently long to ensure either saturation of surface reactions or sufficient purging.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Temperature of deposition = 150 °C\\n2. Standard recipe = 50 ms DEZ dose, 5 s purge, 20 ms H2O dose, 6 s purge\\n3. Saturated GPC = 0.2 nm/cycle\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_50_fig_3.jpg","caption":"Fig 3 Doping fraction (DF) as a function of the doping cycle ratio $R_{x}$ for depositions at $150^{\\circ}C$ , as measured by X-ray photoelectron spectroscopy (XPS). The doping cycle ratio $R_{x}$ (i.e. the ratio of the number of doping ALD cycles $(X = \\mathsf{Al}, \\mathsf{B})$ over the total ALD cycles in one supercycle) is calculated as $1 / (m + 1)$ . The estimated relative error for the doping fraction is $\\sim 10\\%$ . The lines serve as guides to the eye.","id":"train/atomic-layer-deposition/experimental-usecase/50/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/50/fig_3","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/Garcia-Alonso et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":625,"height":463,"image_format":"jpeg","image_sha256":"34f16fb1abd232eb3f78ef62f3f46346bfef7936d22c1c249cccb57a7d0962ae","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":5,"width":620,"height":451}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot shows the relationship between dopant cycle ratio and doping fraction (DF) for TIB, DMAI, and TMA.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Dopant Cycle Ratio (R) | TIB (DF) | DMAI (DF) | TMA (DF) |\\n|-------------------------|----------|-----------|----------|\\n| 0.02 | 0.015 | 0.020 | 0.025 |\\n| 0.04 | 0.025 | 0.045 | 0.060 |\\n| 0.06 | 0.035 | 0.065 | 0.095 |\\n| 0.08 | 0.045 | 0.085 | 0.135 |\\n| 0.10 | 0.055 | 0.105 | 0.175 |\\n| 0.15 | 0.075 | 0.115 | 0.215 |\\n| 0.20 | 0.095 | — | — |\\n| 0.25 | 0.115 | — | — |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Trimethylaluminium (TMA) \\n2. Dimethylaluminium isopropoxide (DMAI)\\n3. Triisopropyl borate (TIB)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"From the figure, comparing all three precursors, TIB results in the lowest incorporation of doping elements while TMA shows the greatest doping incorporation for same dopant cycle ratio.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This is in agreement with the data obtained by RBS/PIGE analysis, where the areal densities of B or Al per cycle were, on average, ~3.2 at per nm2 per supercycle (TIB), ~4.4 at per nm2 per supercycle (DMAI) and ~9.0 at per nm2 per supercycle (TMA ) for the cycle ratios (m) investigated. A combination of precursor reactivity and molecule size is most likely the cause of this trend. The bulkier isopropyl ligands in the TIB and DMAI precursors are likely to cause steric hindrance on the film surface, resulting in a more sparse distribution of the dopants on the surface and therefore a lower doping fraction.36 This is expected from the decreasing size of the monomers (TIB > DMAI > TMA).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is worth highlighting that the doping concentrations do not relate directly to the doping efficiency,\\nas some of the doping material might have formed metal oxide or alloy clusters (e.g. Al2O3) rather than merely doping the film. In this case, the dopant atoms do not contribute donating any electrons to the ZnO film.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_50_fig_5.jpg","caption":"Fig. 5 Resistivity, $\\rho$ (a), carrier concentration, $n$ , and mobility, $\\mu$ (b) and doping fraction, DF, and doping efficiency, $\\eta$ (c) of the ZnO:B films as a function of the deposition temperature. The films with thicknesses of $45 \\pm 5 \\mathrm{nm}$ were deposited on glass substrates. A cycle ratio of $m = 24$ was employed as it resulted in optimised resistivity in the doping series at $150^{\\circ}\\mathrm{C}$ . The lines serve as guides to the eye. The estimated relative statistical uncertainties for $n$ , $\\mu$ , DF and $\\eta$ are $3\\%$ , $5\\%$ , $10\\%$ and $20\\%$ respectively.","id":"train/atomic-layer-deposition/experimental-usecase/50/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/50/fig_5","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/Garcia-Alonso et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":586,"height":1070,"image_format":"jpeg","image_sha256":"e0f526ccecc8cbd299c326a242d068ea3ec7c7a6a124a0e2200e9e14a0b77318","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":538,"height":313},{"panel_id":"b","x":0,"y":335,"width":584,"height":370},{"panel_id":"c","x":2,"y":707,"width":579,"height":355}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The resistivity as a funtion of temperature is plotted and it decreases as temperature increases.\"},{\"panel_id\":\"b\",\"text\":\"Both carrier concentration and mobility plotted against temperature increase with temperature, but the mobility decreases slightly at higher temperatures.\"},{\"panel_id\":\"c\",\"text\":\"Doping efficiency versus temperature shows it decreases while doping fraction increases with temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Resistivity, ρ (mΩ cm) |\\n|---|---|\\n| 150 | 3.5 |\\n| 200 | 2.5 |\\n| 250 | 2.2 |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | Carrier concentration, n (10^20 cm^-3) | Mobility, μ (cm²V^-1s^-1) |\\n|---|---|---|\\n| 150 | 2.3 | 8 |\\n| 200 | 2.6 | 11 |\\n| 250 | 2.8 | 10 |\"},{\"panel_id\":\"c\",\"text\":\"| Temperature (°C) | Doping fraction, DF | Doping Efficiency, η (%) |\\n|---|---|---|\\n| 150 | 0.02 | 30 |\\n| 200 | 0.025 | 25 |\\n| 250 | 0.03 | 20 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Compared to ZnO:Al films deposited at 250 °C, it appeared that processing at 150 °C led to lower absolute values of conductivity (i.e. a higher resistivity)\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The doping fraction increased with increasing deposition temperature, whereas the doping efficiency decreased slightly, despite the slight increase in carrier concentration with temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It can be concluded that ~200 °C is the optimum deposition temperature for ZnO:B. However, it should be noted that the deposition temperature that is feasible for certain applications can be limited to lower temperatures than 200 °C.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The resistivity of the ZnO:B films decreased from 3.5 mOhm cm at 150 °C to 2.2 mOhm cm when deposited at temperatures of 200–240 °C. This was due to an increase in carrier concentration from 2.2* 10^20 /cm3 to 2.8* 10^20 /cm3 and an increase in mobility from 8 to 10.5 cm2 /Vs.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_50_fig_7.jpg","caption":"Fig. 7 (a) Intensity ratio $I_{002} / I_{100}$ of the (002) and (100) peaks measured by XRD on the ZnO:X $(X = \\mathsf{Al},\\mathsf{B})$ films reflecting the change in texture from $\\langle 002\\rangle$ to $\\langle 001\\rangle$ and (b) $c$ -lattice parameter of the ZnO wurtzite unit cell and the corresponding $2\\theta$ position of the (002) peak as a function of the doping fraction in the ZnO:X $(X = \\mathsf{Al},\\mathsf{B})$ . The films were deposited at $150^{\\circ}C$ on glass substrates. The $c$ -lattice parameter of the wurtzite ZnO crystal is $5.207\\mathrm{\\AA}$ 6","id":"train/atomic-layer-deposition/experimental-usecase/50/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/50/fig_7","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"multi-axis chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/Garcia-Alonso et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":627,"height":619,"image_format":"jpeg","image_sha256":"1a87cbb32c784f80fe2dda489bdb6aea86e83904cf509e7e88f4c776782e08e6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":5,"width":565,"height":272},{"panel_id":"b","x":4,"y":293,"width":618,"height":326}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the variation of I_002/I_100 ratio with doping fraction\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the variation of c-lattice parameter with doping fraction, along with the 2θ_002 angle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Doping fraction, DF | I_002/I_100 TIB |I_002/I_100 DMAI |\\n|---|---|---|\\n| 0.00 | 2.20 | 2.20 | \\n| 0.02 | 1.80 | 1.30 | \\n| 0.04 | 1.60 | 0.60 | \\n| 0.06 | 1.30 | 0.50 | \\n| 0.08 | 0.80 | - | \\n| 0.10 | 0.40 | - |\"},{\"panel_id\":\"b\",\"text\":\"| Doping fraction, DF | c-lattice parameter, Å | 2θ_002 |\\n|---|---|---|\\n| 0.00 | 5.22 | 34 |\\n| 0.02 | 5.20 | 34.2 |\\n| 0.04 | 5.18 | 34.4 |\\n| 0.06 | 5.16 | 34.6 |\\n| 0.08 | 5.14 | - |\\n| 0.10 | 5.12 | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is a guide to the eye, the ratio I002/I100 for a powder pattern, i.e., the pattern characteristic for a film with randomly oriented crystals, has been included to illustrate the change in texture from (002) to (100).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ratio I002/I100 for a powder pattern, i.e., the pattern characteristic for a film with randomly oriented crystals, has been included to illustrate the change in texture from (002) to (100). Secondly,\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The shift of the (002) peak as a function of the doping fraction, as a consequence of the\\ncompression of the unit cell (i.e. a decrease of the c-lattice parameter) with increasing doping fractions. It should be noticed that the c-lattice parameter for the pure ZnO films (i.e., DF = 0) was slightly larger (5.219 Å) than the value reported for the wurtzite ZnO crystal lattice (5.207 Å).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A significant shift of the peaks to higher 2theta values was observed for increasing B fractions, which\\nwas likely due to compressive stress in the ZnO unit cell caused by the substitution of Zn2+ (ionic radius of 0.60 Å, assuming a four-coordinate environment as expected for wurtzite structures)\\n132 with smaller B3+ ions (four-coordinate ionic radius of 0.11 Å).132 This effect was significantly smaller in the case of ZnO:Al films doped by DMAI (Al3+, four-coordinate ionic radius of 0.39 Å).\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_54_figure_11.jpg","caption":"Figure 11. (Color online) Galvanostatic cycling for TiN prepared by sputtering and remote plasma ALD at a constant current of $3\\mu \\mathrm{A} / \\mathrm{cm}^2$ . The remote plasma ALD TiN film shows a lower capacity for Li, indicating better barrier properties.","id":"train/atomic-layer-deposition/experimental-usecase/54/figure_11","sample_id":"atomic-layer-deposition/experimental-usecase/54/figure_11","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":666,"height":509,"image_format":"jpeg","image_sha256":"53de9621c45afeae93eb0522998afddf3a1245ea518e7592e560845db1b8ebbc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":661,"height":506}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the Li-capacity (µAh/cm²) of two different TiN samples over galvanostatic cycles. The blue circles represent 'Sputtered TiN', while the red circles represent 'TiN (H₂-N₂ 30:4 plasma)'. Both samples exhibit a slight increase in capacity over time.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Galvanostatic cycles | Li-capacity (µAh/cm²) Sputtered TiN | Li-capacity (µAh/cm²) TiN | \\n|---|---|---|\\n| 0 | 0.3 | 0.2 |\\n| 5 | 0.3 | 0.2 |\\n| 10 | 0.3 | 0.2 |\\n| 15 | 0.3 | 0.2 |\\n| 20 | 0.3 | 0.2 |\\n| 25 | 0.3 | 0.2 |\\n| 30 | 0.3 | 0.2 |\\n| 35 | 0.3 | 0.2 |\\n| 40 | 0.3 | 0.2 |\\n| 45 | 0.3 | 0.2 |\\n| 50 | 0.3 | 0.2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Sputtered TiN and ALD-grown TiN.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.3 µAh/cm².\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.2 µAh/cm².\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_59_fig_4.jpg","caption":"FIG. 4. (Color online) Growth rate per cycle of $\\mathrm{TaN}_{x,x\\leqslant 1}$ films as a function of the ALD process parameters: (a) PDMAT dosing time, (b) $\\mathrm{H}_{2}$ plasma exposure time, and (c) deposition temperature. The growth rates are determined by in situ spectroscopic ellipsometry by varying the process parameters during one deposition run (closed symbols) and by the deposition of a thick film under constant process conditions (open symbols). The lines in (a) and (b) are exponential fits to the data.","id":"train/atomic-layer-deposition/experimental-usecase/59/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/59/fig_4","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/Langereis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"59","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":611,"height":1403,"image_format":"jpeg","image_sha256":"3c028150e7a3abbc5a36e11fe962058bf2dc6405ab120e291e998cf487bc0d69","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":17,"width":603,"height":437},{"panel_id":"b","x":5,"y":482,"width":605,"height":447},{"panel_id":"c","x":10,"y":950,"width":600,"height":435}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the growth rate (nm/cycle) versus the PDMAT dosing (s). The growth rate increases with increasing PDMAT dosing time until it plateaus.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the growth rate (nm/cycle) versus the plasma exposure time (s). The growth rate increases with increasing plasma exposure time.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the growth rate (nm/cycle) versus the deposition temperature (°C). The growth rate remains constant across different deposition temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| PDMAT dosing (s) | Growth rate (nm/cycle) |\\n|---|---|\\n| 0 | 0.00 |\\n| 1 | 0.035 |\\n| 2 | 0.035 |\\n| 3 | 0.040 |\\n| 4 | 0.040 |\\n| 5 | 0.040 |\"},{\"panel_id\":\"b\",\"text\":\"| Plasma exposure time (s) | Growth rate (nm/cycle) |\\n|---|---|\\n| 0 | 0.00 |\\n| 5 | 0.04 |\\n| 10 | 0.042 |\\n| 15 | - |\\n| 20 | - |\\n| 25 | - |\\n| 30 | 0.05 |\"},{\"panel_id\":\"c\",\"text\":\"| Deposition temperature (°C) | Growth rate (nm/cycle) |\\n|---|---|\\n| 150 | 0.05 |\\n| 175 | 0.05 |\\n| 200 | 0.05 |\\n| 225 | 0.05 |\\n| 250 | 0.05 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The saturation point can be observed after approximately three seconds of PDMAT.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"To analyze the growth rate for the ALD process, the deposition temperature was changed from 150 °C to 250 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The growth rate remains constant across deposition temperatures.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_59_fig_6.jpg","caption":"FIG. 6. (Color online) Resistivity of $\\mathrm{TaN}_{x,x\\leqslant 1}$ films with an $\\sim 30 \\mathrm{nm}$ thickness deposited by remote plasma ALD using different $\\mathrm{H}_{2}$ plasma exposure times within the cycle. The resistivity is determined from in situ SE (closed symbols) and ex situ FPP measurements (open symbols). The line serves as a guide to the eyes. The low-resistivity $\\mathrm{TaN}_{x,x\\leqslant 1}$ film deposited using $3\\mathrm{~s~H}_{2}$ plasma in the ALD cycle has been indicated separately (open triangle).","id":"train/atomic-layer-deposition/experimental-usecase/59/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/59/fig_6","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/Langereis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"59","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":605,"height":466,"image_format":"jpeg","image_sha256":"a6691fc810289d1e368efd517c9850903a722f0cc482e1f0b0632e3620a3aef2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":601,"height":462}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between resistivity and plasma exposure time (s). The fitted curve indicates that resistivity decreases as plasma exposure time increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Plasma exposure time (s) | In-situ SE | Ex-situ SE |\\n| --- | --- | --- |\\n| 0 | 10^4 | 10^5 |\\n| 5 | - | - |\\n| 10 | 10^3 | 10^3 |\\n| 15 | - | - |\\n| 20 | - | - |\\n| 25 | - | - |\\n| 30 | - | 6*10^2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This process corresponds to a remote plasma ALD.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The resistivity decreases as the plasma exposure time increases for both measurements (in-situ and ex-situ SE).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The lowest resistivity is observed after 30 s of plasma exposure.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There is a slight difference between the two SE measurements. The ex-situ SE shows higher resistivity values, which could be related to environmental contamination.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_60_figure_2.jpg","caption":"Figure 2. Saturation plots of ALD $\\mathrm{Y}_2\\mathrm{O}_3$ films at a substrate temperature $200^{\\circ}\\mathrm{C}$ with $\\mathrm{Y}(\\mathrm{EtCp})_2(\\mathrm{iPr - amd})$ and (a) $\\mathrm{H}_2\\mathrm{O}$ , (b) $\\mathrm{O}_2$ plasma, and (c) $\\mathrm{H}_2\\mathrm{O}$ plasma as a reactant. (d) Film thickness determined by in situ SE versus the ALD cycle number under saturated conditions.","id":"train/atomic-layer-deposition/experimental-usecase/60/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/60/figure_2","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"},{"panel_id":"d","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/Zhao et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"60","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":847,"height":669,"image_format":"jpeg","image_sha256":"117f6d27ab4f959906f363d46b0624650c5f3dab2f599955a45f228e1d594962","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":430,"height":340},{"panel_id":"b","x":442,"y":4,"width":404,"height":335},{"panel_id":"c","x":4,"y":336,"width":442,"height":331},{"panel_id":"d","x":452,"y":336,"width":391,"height":330}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Scatter plot showing the growth per cycle (Å/cycle) of Y_2O_3 films as a function of pulse time for precursors Y(EtCp)_2(iPr-amd) and H_2O. The data confirms self-limiting surface reactions\"},{\"panel_id\":\"b\",\"text\":\"Scatter plot showing the growth per cycle (Å/cycle) of Y_2O_3 films as a function of pulse time for precursors Y(EtCp)_2(iPr-amd) and O_2 plasma. The data confirms self-limiting surface reactions\"},{\"panel_id\":\"c\",\"text\":\"Scatter plot showing the growth per cycle (Å/cycle) of Y_2O_3 films as a function of pulse time for precursors Y(EtCp)_2(iPr-amd) and H_2O plasma. The data confirms self-limiting surface reactions\"},{\"panel_id\":\"d\",\"text\":\"The chart showing the thickness of the Y_2O_3 films as a function of ALD cycle number for H_2O plasma, O_2 plasma, and H_2O processes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulse time (s) | GPC (Å/cycle) | Precursor|\\n|---|---|---|\\n| 0,00 | 0,00 | Water |\\n| 1,02 | 0,35 | Water |\\n| 1,93 | 0,52 | Water |\\n| 3,86 | 0,62 | Water |\\n| 6,10 | 0,70 | Water |\\n| 7,83 | 0,74 | Water |\\n| 9,97 | 0,73 | Water |\\n| 15,05 | 0,73 | Water |\\n| 18,00 | 0,72 | Water |\\n| 20,03 | 0,72 | Water |\\n| 0,00 | 0,00 | Y(EtCp)2(iPr-amd) |\\n| 1,93 | 0,32 | Y(EtCp)2(iPr-amd) |\\n| 5,19 | 0,43 | Y(EtCp)2(iPr-amd) |\\n| 8,03 | 0,53 | Y(EtCp)2(iPr-amd) |\\n| 9,86 | 0,62 | Y(EtCp)2(iPr-amd) |\\n| 12,10 | 0,70 | Y(EtCp)2(iPr-amd) |\\n| 14,85 | 0,74 | Y(EtCp)2(iPr-amd) |\\n| 18,20 | 0,71 | Y(EtCp)2(iPr-amd) |\\n| 20,14 | 0,73 | Y(EtCp)2(iPr-amd) |\\n| 24,81 | 0,71 | Y(EtCp)2(iPr-amd) |\\n| 29,69 | 0,73 | Y(EtCp)2(iPr-amd) |\"},{\"panel_id\":\"b\",\"text\":\"| Pulse time (s) | GPC (Å/cycle) | Precursor|\\n|---|---|---|\\n| 0,00 | 0,00 | O2 Plasma |\\n| 0,94 | 0,37 | O2 Plasma |\\n| 1,89 | 0,54 | O2 Plasma |\\n| 2,94 | 0,66 | O2 Plasma |\\n| 3,99 | 0,73 | O2 Plasma |\\n| 5,03 | 0,81 | O2 Plasma |\\n| 5,77 | 0,84 | O2 Plasma |\\n| 8,29 | 0,86 | O2 Plasma |\\n| 10,17 | 0,85 | O2 Plasma |\\n| 11,96 | 0,84 | O2 Plasma |\\n| 0,00 | 0,00 | Y(EtCp)2(iPr-amd) |\\n| 1,99 | 0,46 | Y(EtCp)2(iPr-amd) |\\n| 4,83 | 0,66 | Y(EtCp)2(iPr-amd) |\\n| 8,18 | 0,71 | Y(EtCp)2(iPr-amd) |\\n| 9,86 | 0,80 | Y(EtCp)2(iPr-amd) |\\n| 11,96 | 0,84 | Y(EtCp)2(iPr-amd) |\\n| 15,10 | 0,87 | Y(EtCp)2(iPr-amd) |\\n| 17,94 | 0,89 | Y(EtCp)2(iPr-amd) |\\n| 19,72 | 0,87 | Y(EtCp)2(iPr-amd) |\\n| 25,17 | 0,87 | Y(EtCp)2(iPr-amd) |\\n| 30,00 | 0,86 | Y(EtCp)2(iPr-amd) |\"},{\"panel_id\":\"c\",\"text\":\"| Pulse time (s) | GPC (Å/cycle) | Precursor|\\n|---|---|---|\\n| 0,00 | 0,00 | H2O Plasma |\\n| 0,73 | 0,53 | H2O Plasma |\\n| 1,99 | 0,76 | H2O Plasma |\\n| 3,67 | 0,91 | H2O Plasma |\\n| 5,98 | 0,99 | H2O Plasma |\\n| 7,66 | 1,08 | H2O Plasma |\\n| 9,86 | 1,11 | H2O Plasma |\\n| 11,64 | 1,06 | H2O Plasma |\\n| 14,58 | 1,07 | H2O Plasma |\\n| 0,00 | 0,06 | Y(EtCp)2(iPr-amd) |\\n| 0,84 | 0,44 | Y(EtCp)2(iPr-amd) |\\n| 2,94 | 0,69 | Y(EtCp)2(iPr-amd) |\\n| 5,03 | 0,79 | Y(EtCp)2(iPr-amd) |\\n| 7,87 | 0,88 | Y(EtCp)2(iPr-amd) |\\n| 9,86 | 0,95 | Y(EtCp)2(iPr-amd) |\\n| 11,64 | 0,99 | Y(EtCp)2(iPr-amd) |\\n| 14,69 | 1,10 | Y(EtCp)2(iPr-amd) |\\n| 19,93 | 1,04 | Y(EtCp)2(iPr-amd) |\\n| 24,65 | 1,00 | Y(EtCp)2(iPr-amd) |\\n| 29,69 | 1,06 | Y(EtCp)2(iPr-amd) |\"},{\"panel_id\":\"d\",\"text\":\"| ALD cycle number | Thickness (nm) | Precursor|\\n|---|---|---|\\n| 0.00 | 0.0 | H2O |\\n| 40 | 2.65 | H2O |\\n| 68 | 5.05 | H2O |\\n| 100 | 7.68 | H2O |\\n| 0 | 0 | H2O Plasma |\\n| 42 | 4.41 | H2O Plasma |\\n| 100 | 10.39 | H2O Plasma |\\n| 0 | 0 | O2 Plasma |\\n| 50 | 4.88 | O2 Plasma |\\n| 100 | 8.67 | O2 Plasma |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Water achieves saturation faster than the yttrium precursor. The graph shows that the growth per cycle (GPC) for water stabilizes at its saturation point with a pulse time of approximately 8 seconds. In contrast, the yttrium precursor requires a longer pulse time of about 12 seconds to reach saturation level.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After ~5 seconds.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"H2O plasma.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"H2O: ~0.74 nm/cycle, O2 palsma: ~0.83 nm/cycle, H2O palsma: ~0.103 nm/cycle\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_60_figure_8.jpg","caption":"Figure 8. Water contact angles of as-deposited and $\\mathrm{Y}_2\\mathrm{O}_3$ films with a thickness of 5, 10, 20, and $30~\\mathrm{nm}$ with (a) $\\mathrm{H}_2\\mathrm{O}$ , (b) $\\mathrm{O}_2$ plasma, (c) $\\mathrm{H}_2\\mathrm{O}$ plasma, and (d) the surface free energy.","id":"train/atomic-layer-deposition/experimental-usecase/60/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/60/figure_8","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"},{"panel_id":"deposition","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/Zhao et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"60","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":886,"height":689,"image_format":"jpeg","image_sha256":"6b568ab6324ec1cc7ac650bfe1a52472c33d48d31a545a31b0ea12ac3b13c24b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":3,"width":442,"height":340},{"panel_id":"b","x":458,"y":0,"width":423,"height":350},{"panel_id":"c","x":10,"y":356,"width":435,"height":328},{"panel_id":"d","x":468,"y":349,"width":413,"height":338}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_60_figure_9.jpg","caption":"Figure 9. Water contact angles of as-deposited $30~\\mathrm{nm}$ thick $\\mathrm{Y}_2\\mathrm{O}_3$ surfaces (a) before and after annealing at $500^{\\circ}\\mathrm{C}$ for $2\\mathrm{~h}$ in static air and (b) after treatment with hexane, toluene, ethanol, and isopropanol for $24\\mathrm{~h}$ .","id":"train/atomic-layer-deposition/experimental-usecase/60/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/60/figure_9","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/Zhao et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"60","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":889,"height":336,"image_format":"jpeg","image_sha256":"a672ee10f52f2cc0bcea20718393f0b8ff38c53c880882a7f2144296138af89c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":4,"width":449,"height":330},{"panel_id":"b","x":462,"y":5,"width":423,"height":326}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_63_fig_1.jpg","caption":"FIG. 1. Growth rate of $\\mathrm{Ga}_2\\mathrm{O}_3$ thin films as a function of (a) $\\mathrm{O}_2$ plasma flow duration at $250^{\\circ}\\mathrm{C}$ and (b) deposition temperature. TMG dose and $\\mathrm{O}_2$ plasma flow rate were constant at $0.015\\mathrm{s}$ and $25\\mathrm{scm}$ respectively. (c) $\\mathrm{Ga}_2\\mathrm{O}_3$ film thickness as a function of the number of PEALD cycles.","id":"train/atomic-layer-deposition/experimental-usecase/63/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/63/fig_1","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/Donmez et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"63","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":550,"height":1266,"image_format":"jpeg","image_sha256":"3c23f5ec3c13d73347c70c566bfed5c5845d398f83040cb4bfaa5cf544dd39af","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":548,"height":417},{"panel_id":"b","x":4,"y":424,"width":542,"height":419},{"panel_id":"c","x":0,"y":851,"width":547,"height":411}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The deposition rate increases rapidly with increasing O₂ plasma duration up to 10 seconds, then plateaus.\"},{\"panel_id\":\"b\",\"text\":\"The deposition rate remains relatively constant across a wide range of temperatures, with a slight decrease at higher temperatures.\"},{\"panel_id\":\"c\",\"text\":\"Film thickness increases linearly with the number of PEALD cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| O2 plasma duration (s) | Deposition rate (nm/cycle) |\\n|---|---|\\n| 2 | 0.020 |\\n| 5 | 0.043 |\\n| 10 | 0.051 |\\n| 20 | 0.053 |\\n| 40 | 0.051 |\\n| 60 | 0.052 |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | Deposition rate (nm/cycle) |\\n|---|---|\\n| 30 | 0.061 |\\n| 100 | 0.054 |\\n| 150 | 0.053 |\\n| 200 | 0.053 |\\n| 250 | 0.053 |\\n| 300 | 0.053 |\\n| 350 | 0.052 |\\n| 400 | 0.053 |\"},{\"panel_id\":\"c\",\"text\":\"| Number of PEALD cycles | Film thickness (nm) |\\n|---|---|\\n| 50 | 3.0 |\\n| 150 | 8.0 |\\n| 300 | 16.0 |\\n| 500 | 26.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The deposition rate rises rapidly from about 0.02 nm per cycle at 2 s to about 0.05 nm per cycle by about 10 s, then stays near that level up to 60 s. Saturation begins at roughly 10 s.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The growth per cycle is approximately constant over the tested cycle counts.\\n\\nThere is no strong incubation delay in thickness accumulation over this range.\\n\\nThe process behaves in a self limiting manner consistent with ALD type growth.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The squares are measured deposition rate values at different substrate temperatures. The dashed line indicates the approximate constant growth per cycle within the ALD temperature window, about 0.53 Å per cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A broad temperature window with stable growth per cycle makes the process easier to transfer across tools and substrates because small temperature variations have limited impact on thickness control. It also enables deposition on temperature sensitive substrates by selecting a lower temperature while keeping similar thickness per cycle. In practice, this supports more predictable film thickness targeting across devices and wafer areas.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_64_fig_2.jpg","caption":"FIG. 2. Growth rate of the platinum films grown from $\\mathrm{MeCpPtMe}_3$ as a function of the deposition temperature, the film thicknesses being measured by EDX and XRR. The $\\mathrm{MeCpPtMe}_3$ and oxygen pulse times were $0.7$ and $1.0\\mathrm{s}$ , respectively, and the purge period between the pulses was $0.7\\mathrm{s}$ .","id":"train/atomic-layer-deposition/experimental-usecase/64/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/64/fig_2","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"64","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":528,"height":359,"image_format":"jpeg","image_sha256":"78eed6a2552c212122e78187b5cdcd19473f4a4c14aae1902d89d19b9ab3a46b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":528,"height":359}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the growth rate of platinum films deposited from MeCpPtMe₃ as a function of deposition temperature (200–300 °C). The film thicknesses were measured using EDX and XRR. The plot illustrates that the growth rate increases with temperature, from about 0.30 Å/cycle at 200 °C to 0.51 Å/cycle at 300 °C. Pulse and purge times for the precursor and oxygen were 0.7–1.0 s.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition temperature (°C) | Growth rate (Å cycle⁻¹) |\\n|---|---|\\n| 200 | 0.30 |\\n| 220 | 0.36 |\\n| 240 | 0.41 |\\n| 260 | 0.45 |\\n| 280 | 0.48 |\\n| 300 | 0.51 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Using pure oxygen instead of air allows deposition of platinum films at significantly lower temperatures. In previous work using air, no film was obtained below 300 °C, whereas with pure oxygen, films could be grown starting at 200 °C. The higher oxygen partial pressure is key to enabling film growth at these lower temperatures without affecting the maximum growth rate at 300 °C.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 300 °C.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The growth rate increases as the deposition temperature increases from 200 °C to 300 °C.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Deposition temperature (200–300 °C), Oxygen partial pressure (higher in current study compared to previous air-based study), Pulse times of MeCpPtMe₃ (0.7 s) and oxygen (1.0 s), Purge time between pulses (0.7 s)\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_69_FIG1_a.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/69/FIG1_a","sample_id":"atomic-layer-deposition/experimental-usecase/69/FIG1_a","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG1_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG1_a.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/Ruben Blomme et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"69","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"not_found"},"width":703,"height":392,"image_format":"jpeg","image_sha256":"3e440481ef613a49314e31f8ac3cf4194a2ac140076c8a554fb17b03009458ec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":673,"height":382}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A scatter plot showing the linear increase in thickness (in nm) as a function of ALD cycle number.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD Cycle (#) | Thickness (nm) |\\n|---|---|\\n| 0 | 0 |\\n| 20 | 2.5 |\\n| 40 | 5 |\\n| 60 | 7 |\\n| 80 | 9 |\\n| 100 | 11 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 9 nm.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For both O2 plasma exposure steps, roughly 0.16 nm is removed.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the TDMAP and TMA exposure steps, material is deposited, roughly 0.20 and 0.24 nm, respectively. During O2-plasma exposure, material is removed, roughly 0.16 and 0.17 nm for the first and second exposure, respectively. This yields a net growth of 0.11 nm/cycle.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_69_FIG5.jpg","caption":"FIG. 5. In situ ellipsometry data for the different combinations of precursors that were tested at $300^{\\circ}\\mathrm{C}$ . Depicted are the thicknesses obtained from the SE measurements conducted at the end of each full cycle.","id":"train/atomic-layer-deposition/experimental-usecase/69/FIG5","sample_id":"atomic-layer-deposition/experimental-usecase/69/FIG5","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/Ruben Blomme et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"69","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":678,"height":456,"image_format":"jpeg","image_sha256":"bd145982728ec2d269e69b6df440afd9ad141a7374a762806439a0465648b2a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":4,"width":674,"height":450}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the thickness of as a function of the number of ALD cycles for 5 different precursor combinations.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD Cycle (#) | Thickness (nm) TDMAP - TMA | Thickness (nm) TDMAP - O₂* | Thickness (nm) TDMAP - O₂* - TMA | Thickness (nm) TDMAP - TMA - O₂* | Thickness (nm) TDMAP - O₂* - TMA - O₂* |\\n|---|---|---|---|---|---|\\n| 0 | 0 | 0 | 0 | 0 | 0 |\\n| 20 | 0 | 2.0 | 2.0 | 2.0 | 3.5 |\\n| 40 | 0 | 2.0 | 4.0 | 4.0 | 6.0 |\\n| 60 | 0 | 2.0 | 6.0 | 6.0 | 8.0 |\\n| 80 | 0 | 2.0 | 7.0 | 7.0 | 10.0 |\\n| 100 | 0 | 2.0 | 8.0 | 8.0 | 12.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TP–O–TAl–O (TDMAP–O₂*–TMA–O₂*).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TP–O–TAl–O process yields a phosphorus content of approximately 11%, which is very similar to that obtained for the TP–TAl–O process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TP–TAl process shows no sustained growth beyond an initial thickness increase of about 0.37 nm after the first cycle, indicating very low reactivity without a coreactant.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TP–O (TDMAP–O₂*) process shows limited growth that saturates at a total film thickness of approximately 2 nm.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_69_FIG6_a.jpg","caption":"FIG. 7. In situ ellipsometry data of three processes with different AIO-PO ratios. As the contribution of PO increases, the overall growth of the material also increases.","id":"train/atomic-layer-deposition/experimental-usecase/69/FIG6_a","sample_id":"atomic-layer-deposition/experimental-usecase/69/FIG6_a","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG6_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG6_a.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/Ruben Blomme et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"69","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":650,"height":423,"image_format":"jpeg","image_sha256":"cf6c54d202284429dd0ac51de342cf1b266b7fd49eab7dd3077b4f91abfee166","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":650,"height":423}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot displays the ratio of oxygen to phosphorus (O/P) against various elements (Al, Ti, Ca, Li, Fe, La, Zn, Co, Na, Mg, V, Ni). The points are color-coded, and there's a horizontal dashed line indicating a specific value.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| M (Element) | TMP | TMP* | DEPA | DEPA* | TDMAP | This work |\\n|---|---|---|---|---|---|---|\\n| Al | 4.8 | 3.4 | | | | 5.6 |\\n| Ti | 3.9 | 2.6 | | 1.9 | | |\\n| Ca | 3.7 | 3.3 | | | | |\\n| Li | 3.8 | 2.2 | 2.4 | | | |\\n| Fe | 3.9 | 2.5 | | | | |\\n| La | 4.9 | | | | | |\\n| Zn | | 2.0 | | | | |\\n| Co | 4.5 | 2.9 | | | | |\\n| Na | | | 3.7 | | | |\\n| Mg | | | | | 3.2 | |\\n| V | | 3.4 | | | | |\\n| Ni | | 2.8 | | | | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The aluminum phosphate deposited in this work has a P/M ratio of 0.51 and an O/P ratio of 5.65, which deviates strongly from an ideal orthophosphate composition (P/M = 1 and O/P = 4), indicating phosphorus deficiency and oxygen excess.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The aluminum phosphate in this work shows a lower P/M ratio (0.51 vs 0.67) and a higher O/P ratio (5.65 vs 3.16) than the TDMAP-based magnesium phosphate, highlighting a substantial difference in phosphorus incorporation between the two systems.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The comparison demonstrates that both the phosphorous precursor and the metal precursor significantly influence the final film composition. In particular, the TDMAP-based aluminum phosphate deposited in this work exhibits an unusually low P/M ratio and a very high O/P ratio, placing it far from the stoichiometry of an orthophosphate. This behavior contrasts with TMP-, TMP*-, DEPA-, and DEPA*-based processes, which generally yield compositions closer to P/M = 1. The stark difference with the TDMAP-based magnesium phosphate further suggests that the metal precursor itself can dictate growth chemistry and ligand exchange efficiency in ALD, reinforcing that phosphorus incorporation is not solely controlled by the phosphorous precursor but emerges from the combined metal–phosphorus chemistry.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Processes based on TMP, TMP*, DEPA, and DEPA* generally show higher P/M ratios than TDMAP-based processes, indicating more efficient phosphorus incorporation.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_69_FIG7.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/69/FIG7","sample_id":"atomic-layer-deposition/experimental-usecase/69/FIG7","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/Ruben Blomme et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"69","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"not_found"},"width":672,"height":456,"image_format":"jpeg","image_sha256":"8c73efde7c9f7a1c19019166b8c31da91f6cc551c669baf7e46fce65365c8915","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":672,"height":456}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the growth of thickness over ALD supercycles for different AIO-PO ratios.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD Supercycle (#) | Thickness (nm) AlO-PO (1-1) | Thickness (nm) AlO-PO (1-3) | Thickness (nm) AlO-PO (1-6) |\\n|---|---|---|---|\\n| 0 | 0 | 0 | 0 |\\n| 20 | 3 | 5 | 7 |\\n| 40 | 5 | 8 | 12 |\\n| 60 | 8 | 12 | 16 |\\n| 80 | 10 | 16 | 22 |\\n| 100 | 13 | 20 | 28 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 7 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 13 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 17 nm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 7 illustrates that splitting the original four-step process into separate TDMAP–O₂* and TMA–O₂* cycles and combining them in a supercycle provides a practical lever to control film composition and growth behavior. Increasing the number of TDMAP–O₂* cycles per supercycle (from 1 to 3 and 6, with one TMA–O₂* cycle fixed) systematically increases both the growth per supercycle and the phosphorus content of the deposited film. Unlike the standalone TP–O process, which saturates at a thickness of approximately 2 nm, the periodic insertion of a TMA–O₂* cycle effectively resets the surface chemistry, allowing continued chemisorption and further growth during subsequent TDMAP–O₂* cycles. As a result, the supercycle approach overcomes growth saturation while enabling tunable phosphorus incorporation, analogous to previously reported TMP-based supercycle strategies.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_3.jpg","caption":"Figure 3. Process development steps of Eu-HQA thin films that show temperature scanning (left), surface saturation of precursors (middle), and thickness control over the number of ALD/MLD cycles (right). (Reproduced under CC licence from ref. [55], 2023, Royal society of chemistry).","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_3","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":1003,"height":689,"image_format":"jpeg","image_sha256":"7576d8f8bc10778c087e6e009b4ec436f752e2a9f4e87184681e0dbcfa8e1593","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":658,"y":0,"width":341,"height":688},{"panel_id":"b","x":332,"y":0,"width":326,"height":688},{"panel_id":"a","x":0,"y":0,"width":331,"height":694}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The graph shows the relationship between deposition temperature (Tdep) and GPC (Å/cycle). As the temperature increases, GPC decreases.\"},{\"panel_id\":\"b\",\"text\":\"The graph illustrates the impact of pulse length on GPC. Longer pulse lengths result in higher GPC values.\"},{\"panel_id\":\"c\",\"text\":\"The line chart demonstrates the increase in thickness with the number of cycles. There's a linear relationship indicating that more cycles lead to thicker layers.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Tdep (°C) | GPC (Å/cycle) |\\n|---|---|\\n| 210 | 6.8 |\\n| 220 | 6.5 |\\n| 230 | 6.0 |\\n| 240 | 5.5 |\"},{\"panel_id\":\"b\",\"text\":\"| Pulse length (s) | GPC (Å/cycle) |\\n|---|---|\\n| 1 | 5.7 |\\n| 2 | 6.5 |\\n| 3 | 7.0 |\\n| 4 | 7.2 |\\n| 5 | 7.3 |\"},{\"panel_id\":\"c\",\"text\":\"| Cycles | Thickness (nm) |\\n|---|---|\\n| 50 | 50 |\\n| 100 | 75 |\\n| 150 | 100 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The linear relationship between thickness and cycle number, passing through the origin, confirms self-limiting, layer-by-layer growth characteristic of ideal ALD/MLD processes.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both Eu-thd and HQA precursors reach saturation at approximately 3 seconds pulse length.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Blue points represent Eu-thd (europium tris-tetramethylheptanedionate) precursor saturation, and green points represent HQA (2-hydroxyquinoline-4-carboxylic acid) organic precursor saturation.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This decreasing GPC trend is typical for ALD/MLD processes involving organic precursors. At higher temperatures, organic molecules may partially desorb from the surface before reacting, or undergo thermal decomposition. Additionally, increased thermal energy can enhance desorption of physisorbed species, reducing the effective surface coverage per cycle.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_6.jpg","caption":"Figure 6. Growth rates of different $\\Upsilon_{2}\\bigcirc_{3}$ processes (left) with different Y-precursors and $\\mathsf{H}_2\\mathsf{O}$ as co-reactant, and (right) with different co-reactants and $\\Upsilon (^{(\\mathsf{IPr2}}\\mathsf{amd})(^{\\mathsf{Et}}\\mathsf{Cp})_2$ as Y-precursor.","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_6","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":1167,"height":400,"image_format":"jpeg","image_sha256":"b259f81d80fcc7b8644d5a9da60c8086aa7b9362ff7f505ca05a3ca3298f14bd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":583,"y":4,"width":580,"height":396},{"panel_id":"a","x":0,"y":2,"width":574,"height":393}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Comparison of GPC values across ten yttrium precursors with H₂O as co-reactant, showing Yᴱᵗ(Cp)₃ achieves the highest GPC (~1.7 Å) and Y(ᵗBu₂-Famd)₃ the lowest (~0.67 Å).\"},{\"panel_id\":\"b\",\"text\":\"Effect of five different co-reactants on GPC when using Y(ⁱPr₂amd)(ᴱᵗCp)₂ precursor, with O₃ giving the highest (~1.1 Å) and O₂ plasma the lowest (~0.83 Å).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| GPC (Å) | Compound Name |\\n| --- | --- |\\n| 0.75 | Y(iPr2-amd)3 |\\n| 0.85 | Y(Me)(Cp)3 |\\n| 1.00 | Y(Cp)3 |\\n| 1.10 | Y(iPr2-amd)(EtCp)2 |\\n| 1.20 | Y(Bu)(Cp)3 |\\n| 1.25 | Y(DPDMG)3 |\\n| 1.35 | Y(iPr2-amd)(iPrCp)2 |\\n| 1.45 | Y(iPr2-Famd)3 |\"},{\"panel_id\":\"b\",\"text\":\"| GPC (Å) | Gas Type |\\n| --- | --- |\\n| 0.75 | O2 plasma |\\n| 0.85 | H2O plasma |\\n| 0.95 | O3 |\\n| 1.05 | O2 |\\n| 1.15 | H2O |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ozone produces the highest GPC (~1.1 Å), followed by H₂O and H₂O plasma (~1.03–1.05 Å), then O₂ (~0.9 Å), with O₂ plasma yielding the lowest (~0.83 Å). This suggests that chemical reactivity of the oxidizer toward the precursor ligands, rather than plasma activation alone, primarily determines growth rate.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The y-axis represents growth-per-cycle (GPC) measured in angstroms (Å), indicating the film thickness deposited per ALD cycle.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yᴱᵗ(Cp)₃ achieves the highest GPC of approximately 1.7 Å.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Key factors include: (1) steric bulk of ligand substituents affecting surface packing; (2) ligand lability influencing reaction kinetics with H₂O; (3) molecular footprint controlling maximum surface coverage per cycle.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_37a3a22fa00063f75c2dfec274e4e445732ee1bc19ab810e090c416eadd5d937.jpg","caption":"Fig. B2 - Comparison between pressure readings by capacitance manometer and Pirani gauge.","id":"train/atomic-layer-deposition/simulation-usecase/32/37a3a22fa00063f75c2dfec274e4e445732ee1bc19ab810e090c416eadd5d937","sample_id":"atomic-layer-deposition/simulation-usecase/32/37a3a22fa00063f75c2dfec274e4e445732ee1bc19ab810e090c416eadd5d937","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/37a3a22fa00063f75c2dfec274e4e445732ee1bc19ab810e090c416eadd5d937.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/37a3a22fa00063f75c2dfec274e4e445732ee1bc19ab810e090c416eadd5d937.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":1017,"height":656,"image_format":"jpeg","image_sha256":"c45015685cae00e243628d083121e3ad6b2920ebc99edc94ecd7cce76e3b0ab1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":4,"width":1008,"height":647}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot compares the capacitance and Pirani guage readings with Argon flow\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pirani Gauge (Torr) | Capacitance Manometer (Torr) |\\n|----------------------|------------------------------|\\n| 0.00 | 0.00 |\\n| 0.02 | 0.03 |\\n| 0.04 | 0.06 |\\n| 0.06 | 0.09 |\\n| 0.08 | 0.11 |\\n| 0.10 | 0.14 |\\n| 0.12 | 0.17 |\\n| 0.14 | 0.20 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The capacitance manometer readings measure pressure consistently with the Pirani gauge with respect to the argon flow\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The model predictions for the pressure to a value(Pconv) to be compared with the Pirani gauge measurements.Although the above assumption is not validated for H2O orTMA, experimental measurements show that it can be used for the Ar flow. However, only by using the same assumption for the reactants, as it is the only way to compare the outlet measurements with the model predictions\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A capacitance manometer is a highly accurate electronic gauge that measures pressure (especially vacuum) by detecting changes in electrical capacitance caused by the deflection of a thin diaphragm, converting this physical movement into a precise electrical signal, making it gas-independent and ideal for lab use\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_4.jpg","caption":"Fig. 4 - Outlet pressure vs inlet Ar flow rate: model predictions (line) and experimental measurements (dots).","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_4","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":1012,"height":567,"image_format":"jpeg","image_sha256":"55e0b26b04d5b876fbcf3c24722474db7e1790970347edcd319e793d0ddc3601","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":1004,"height":560}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart compares the experimental data and model prediction on the relationship between the inlet argon flow rate (in sccm) and the outlet pressure (in Torr). There is a linear increase in outlet pressure as the inlet argon flow rate increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Inlet Argon Flow Rate (sccm) | Outlet Pressure - Experiments (Torr) | Outlet Pressure - Model (Torr) |\\n|------------------------------|--------------------------------------|--------------------------------|\\n| 0 | 0.000 | 0.000 |\\n| 50 | 0.015 | 0.012 |\\n| 75 | 0.022 | 0.020 |\\n| 100 | 0.030 | 0.028 |\\n| 150 | 0.045 | 0.043 |\\n| 200 | 0.060 | 0.058 |\\n| 250 | 0.075 | 0.073 |\\n| 300 | 0.085 | 0.08 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The outlet pressure varied linearly with respect to inlet argon flow rate. As the argon flow rate increases, outlet pressure increases.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"in order to compare the predicted values, Pcalc,with the Pirani measurements, Pexp, the former is converted using the formula , Pconv = Pcalc ( kmixture/kNitrogen), which accounts for the dependence, assumed linear, of the pressure reading on the ratio of the thermal conductivities of the gas mixture and nitrogen\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"kmixture is the thermal conductivity of the gas mixture,kNitrogen is the thermal conductivity of nitrogen, Pcalc is the calculated pressure. Using the kinetic gas theory, the thermal conductivity of pure nitrogen at the outlet temperature, i.e270◦C, is estimated 0.041106 W/mK.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_35_fig_1.jpg","caption":"Fig. 1. Effect of $\\mathrm{AlMe}_3$ reaction temperature on the amount of aluminum adsorbed, $\\Delta c_{\\mathrm{Al}}$ , in the $\\mathrm{AlMe}_3$ reaction with alumina heat-treated at $560^{\\circ}\\mathrm{C}$ (adapted from reference [21]). Results up to reaction at $300^{\\circ}\\mathrm{C}$ are shown; above $300^{\\circ}\\mathrm{C}$ , $\\mathrm{AlMe}_3$ decomposes [21,29]. A line has been fitted to the experimental data; the confidence limits represent 1 standard deviation.","id":"train/atomic-layer-deposition/simulation-usecase/35/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/35/fig_1","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/Riikka L. Puurunen.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":403,"height":228,"image_format":"jpeg","image_sha256":"74bfca2ba037653b9f6e6d42b2190db9052c22dba79e3fff710f7013362344b1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":403,"height":228}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the amount of aluminum adsorbed (Δc_Al) as a function of AlMe₃ reaction temperature on alumina pretreated at 560°C. The fitted line (y = a + bx) yields a = 2.9 ± 0.1 nm⁻² and b = −0.0003 ± 0.0005, indicating that Δc_Al remains essentially constant (~2.9 nm⁻²) across the 80–300°C range, demonstrating temperature independence of aluminum adsorption in this regime.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| AlMe₃ reaction temperature [°C] | Δcₐ [nm²] |\\n|---|---|\\n| 100 | 2.9 ± 0.1 |\\n| 150 | 2.9 ± 0.1 |\\n| 200 | 2.9 ± 0.1 |\\n| 250 | 2.9 ± 0.1 |\\n| 300 | 2.9 ± 0.1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The fitted slope b = −0.0003 ± 0.0005 is statistically indistinguishable from zero, meaning Δc_Al remains constant at approximately 2.9 nm⁻² regardless of reaction temperature in this range.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Above 300°C, AlMe₃ undergoes thermal decomposition, which would introduce non-ALD growth mechanisms and invalidate the self-limiting surface reaction assumption.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The temperature independence indicates that the AlMe₃ chemisorption reaction is not kinetically limited within the 80–300°C window; rather, it proceeds to completion regardless of thermal energy input. This behavior is characteristic of self-terminating ALD reactions where surface site availability (OH groups) and steric hindrance by adsorbed methyl groups, not reaction kinetics, determine the saturation coverage. The constant Δc_Al value of ~2.9 nm⁻² therefore reflects a thermodynamically controlled endpoint defined by the fixed OH concentration on the 560°C pretreated alumina surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The y-axis shows Δc_Al, the surface concentration of aluminum atoms adsorbed per ALD cycle, expressed in units of nm⁻² (atoms per square nanometer).\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_8.jpg","caption":"Figure 8. Hacac pressure contours across the wafer in (a) R1 at $2\\mathrm{s}$ and (b) R4 at $3\\mathrm{s}$ . The red region in (a,b) indicates the area that is covered with the reagent, Hacac. Distribution of exposure time for all nodes in the wafer for (c) R1 and (d) R4. $\\mu$ and $\\sigma$ represent the average and standard deviation, respectively. There are 10,410 nodes in R1 and 6737 nodes in R4.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_8","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"bar chart"},{"panel_id":"d","label":"bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":1089,"height":908,"image_format":"jpeg","image_sha256":"7f3c849e07f505efb0cad2eed2b8bdf45e16f04d6290851f9009f7d2161ba9ca","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":538,"height":388},{"panel_id":"b","x":557,"y":0,"width":532,"height":388},{"panel_id":"c","x":0,"y":481,"width":498,"height":389},{"panel_id":"d","x":557,"y":481,"width":500,"height":357}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Hacac partial pressure contour on wafers in reactor R1 at 2 s, showing coverage regions in red and illustrating spatial distribution of the reagent.\"},{\"panel_id\":\"b\",\"text\":\"Hacac partial pressure contour on wafers in reactor R4 at 3 s, showing coverage regions in red and illustrating spatial distribution of the reagent.\"},{\"panel_id\":\"c\",\"text\":\"Bar chart of Hacac exposure times for all wafer nodes in reactor R1, showing a broader distribution with average 2.717 s and standard deviation 0.1925 s.\"},{\"panel_id\":\"d\",\"text\":\"Bar chart of Hacac exposure times for all wafer nodes in reactor R4, showing a tightly centered distribution with average 2.701 s and standard deviation 0.0079 s.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| x-coordinate|y-coordinate|\\n|-------------|------------|\\n|0.1|-0.05|\\n|0.15|-0.1|\\n|0.2|-0.15|\\n|0.25|-0.2|\\n|0.3|-0.25|\"},{\"panel_id\":\"b\",\"text\":\"| x-coordinate|y-coordinate|\\n|-------------|------------|\\n|0.05|-0.1|\\n|0.1|-0.15|\\n|0.15|-0.2|\\n|0.2|-0.25|\\n|0.25|-0.3|\"},{\"panel_id\":\"c\",\"text\":\"| Exposure time (s)|Number of nodes|\\n|------------------|---------------|\\n|2.0|0|\\n|2.1|0|\\n|2.2|0|\\n|2.3|0|\\n|2.4|0|\\n|2.5|0|\\n|2.6|0|\\n|2.7|0|\\n|2.8|0|\\n|2.9|0|\\n|3.0|0|\\n|3.1|0|\\n|3.2|0|\\n|3.3|0|\\n|3.4|0|\\n|3.5|0|\\n|3.6|0|\\n|3.7|0|\\n|3.8|0|\\n|3.9|0|\\n|4.0|0|\"},{\"panel_id\":\"d\",\"text\":\"| Exposure time (s)|Number of nodes|\\n|------------------|---------------|\\n|2.0|0|\\n|2.1|0|\\n|2.2|0|\\n|2.3|0|\\n|2.4|0|\\n|2.5|0|\\n|2.6|0|\\n|2.7|0|\\n|2.8|0|\\n|2.9|0|\\n|3.0|0|\\n|3.1|0|\\n|3.2|0|\\n|3.3|0|\\n|3.4|0|\\n|3.5|0|\\n|3.6|0|\\n|3.7|0|\\n|3.8|0|\\n|3.9|0|\\n|4.0|0|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Reactor geometry (shape of reaction zones), Wafer rotation speed (angular velocity), Radial position of nodes on the wafer, Design of inlet and outlet configurations, Arc length of reaction zones relative to radial distance\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. R1 exhibits a wider exposure time distribution with higher standard deviation, whereas R4 has a tightly centered distribution with low variability, despite similar average exposure times.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Exposure time is determined by recording the Hacac partial pressure at every node of the wafer as it passes through the reaction zone. Each node is considered exposed as long as the pressure is above a threshold, and the total time in this state defines the exposure time. The wafer rotation and geometry of the reaction zones influence how long each node remains in contact with the reagent, which is then visualized as a distribution across all nodes.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"R1: Average exposure time = 2.717 s, Standard deviation = 0.1925 s\\nR4: Average exposure time = 2.701 s, Standard deviation = 0.0079 s\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_11_figure_2.jpg","caption":"Figure 2. $\\mathrm{ZnO}$ thickness evolution as a function of the number of cycles for (a) sequence 1: Hacac and $\\mathrm{O}_2$ gas (circles); (b) sequence 2: Hacac and $\\mathrm{O}_2$ plasma (squares); and (c) sequence 3: only $\\mathrm{O}_2$ plasma pulses (diamonds). Significant $\\mathrm{ZnO}$ thickness decrease was observed only for sequence 2. All of the experiments were carried out at a temperature of $250^{\\circ}C$","id":"train/atomic-layer-etching/experimental-usecase/11/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/11/figure_2","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plasma.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":506,"height":403,"image_format":"jpeg","image_sha256":"eef0cb05047163a5f0bb13e029928058d5b43a3889b68f281974d3c052da4083","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":366,"y":11,"width":139,"height":355},{"panel_id":"b","x":223,"y":13,"width":133,"height":359},{"panel_id":"a","x":71,"y":11,"width":135,"height":363}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The ZnO thickness remains constant at approximately 585 Å for Hacac + O₂ gas and O₂ plasma treatments, while it decreases linearly for Hacac + O₂ plasma treatment.\"},{\"panel_id\":\"b\",\"text\":\"The ZnO thickness decreases linearly with increasing number of cycles for Hacac + O₂ plasma treatment.\"},{\"panel_id\":\"c\",\"text\":\"The ZnO thickness remains constant at approximately 585 Å for O₂ plasma treatment.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of cycles | Hacac + O₂ gas |\\n|------------------|----------------|\\n| 0 | 584 | \\n| 10 | 585 | \\n| 20 | 585 | \\n| 30 | 585 | \\n| 40 | 585 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of cycles | Hacac + O₂ plasma |\\n|------------------|--------------------|\\n| 0 | 585 |\\n| 10 | 572 |\\n| 20 | 560 |\\n| 30 | 550 |\\n| 40 | 530 |\"},{\"panel_id\":\"c\",\"text\":\"| Number of cycles | O₂ plasma |\\n|------------------|-----------|\\n| 0 | 585 |\\n| 10 | 585 |\\n| 20 | 585 |\\n| 30 | 585 |\\n| 40 | 585 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"From the figure, image b when Hacac and O2 plasma are exposed sequentially, we observe actual etching taking place as the thickness decreases.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Hacac\\n, 2. O2 gas\\n, 3. O2 plasma.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Upon exposure to Hacac an apparent thickness increase of ∼2 Å was detected after the first 10 cycles, whereas the thickness decreases slightly afterward. This apparent thickness increase can be attributed to the adsorption of Hacac molecules onto the ZnO surface, similarly to what has been observed on Al2O3 substrates for the ABC-type area-selective ALD of SiO2. The subsequent thickness decrease might be due to partial decomposition of acac species on the ZnO surface . Note that the measured thickness does not decrease below the starting ZnO thickness during sequence 1.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_11_figure_3.jpg","caption":"Figure 3. (a) EPC as a function of the Hacac exposure time for a fixed $\\mathrm{O}_2$ plasma step of $5\\mathrm{s}$ . Saturation (self-limiting behavior) was reached for a total Hacac exposure of $27\\mathrm{s}$ , resulting in an EPC of $1.31\\mathrm{\\AA / cycle}$ . (b) EPC as a function of the $\\mathrm{O}_2$ plasma exposure time for a fixed Hacac dose of $27\\mathrm{s}$ . A saturated EPC value was measured for all the investigated $\\mathrm{O}_2$ plasma exposure times $(\\geq 2\\mathrm{s})$ . The processing temperature was $250^{\\circ}\\mathrm{C}$ . The dashed lines serve as a guide to the eye.","id":"train/atomic-layer-etching/experimental-usecase/11/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/11/figure_3","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plasma.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":841,"height":352,"image_format":"jpeg","image_sha256":"1d4e3ded5c3e55a171309cab58c75059e3ad8480514d147748f3615cd5cf2c45","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":459,"y":3,"width":365,"height":303},{"panel_id":"a","x":8,"y":6,"width":427,"height":308}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between Hacac exposure time and EPC (Å/cycle). Saturation achieved after 20 s\"},{\"panel_id\":\"b\",\"text\":\"The line chart illustrates the impact of O₂ plasma exposure time on EPC (Å/cycle). Saturation achieved after 3s.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Hacac Exposure (s) | EPC (Å/cycle) |\\n|---------------------|---------------|\\n| 0 | 0.0 |\\n| 5 | 0.4 |\\n| 10 | 0.8 |\\n| 15 | 1.0 |\\n| 20 | 1.2 |\\n| 30 | 1.3 |\\n| 40 | 1.4 |\"},{\"panel_id\":\"b\",\"text\":\"| O₂ Plasma Exposure (s) | EPC (Å/cycle) |\\n|-------------------------|---------------|\\n| 0 | 0.0 |\\n| 1 | 1.2 |\\n| 2 | 1.3 |\\n| 4 | 1.3 |\\n| 6 | 1.3 |\\n| 8 | 1.3 |\\n| 10 | 1.3 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Hacac exposure was observed to saturate at a value of 1.31 ± 0.08 Å for a total Hacac exposure time of 27 s\\n2. O2 plasma exposure time shows saturation already after 2 s at EPC of 1.31 Å/cycle\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"By observing the saturation curves, as the process saturates with respect to the Hacac and O2 plasma exposure, the ALE rate will remain the same irrespective of longer duration indicating the process has hit its reactive limit, therefore the images depict the self-limiting behaviour.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The processing temperature was 250 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_13_figure_5.jpg","caption":"Figure 5. Etch depth versus number of etching cycles.","id":"train/atomic-layer-etching/experimental-usecase/13/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/13/figure_5","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/Low-Damage and Self-Limiting (Al)GaN Etching Process.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":583,"height":450,"image_format":"jpeg","image_sha256":"e0505b85e5d8bb12c0bbeba848cabc4aaa1ff00cbda800da52f38a4676235f15","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":6,"width":579,"height":445}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between the number of cycles and etch depth. As the number of cycles increases, the etch depth also increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of cycles | Etch depth [nm] |\\n|---|---|\\n| 0 | 0 |\\n| 5 | 3 |\\n| 7 | 5 |\\n| 16 | 11 |\\n| 24 | 17 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"5 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"11 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"17 nm.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_4.jpg","caption":"Figure 4. Mass change per cycle (MCPC) showing the self-limiting nature of the $\\mathrm{SF}_4$ and $\\mathrm{Sn(acac)}_2$ reactions during $\\mathrm{Al}_2\\mathrm{O}_3$ ALE at 200 $^\\circ \\mathrm{C}$ . (a) $\\mathrm{SF}_4$ exposure time, $X_{r}$ is varied as the $\\mathrm{Sn(acac)}_2$ exposure time is held constant at $2.5\\mathrm{s}$ . (b) $\\mathrm{Sn(acac)}_2$ exposure time, $X_{r}$ is varied as the $\\mathrm{SF}_4$ exposure time is held constant at $2.5\\mathrm{s}$ . Purge times after each reactant exposure are $55\\mathrm{s}$ .","id":"train/atomic-layer-etching/experimental-usecase/17/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_4","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":672,"height":964,"image_format":"jpeg","image_sha256":"7825a92902e1dc15869af58b329d4aa442aabe19b53803ece7b81fb3a2c8bb1e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":669,"height":474},{"panel_id":"b","x":4,"y":484,"width":664,"height":478}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This dual-panel figure illustrates how MCPC (mass change per cycle) varies with precursor exposure time for both SF₄ and Sn(acac)₂ in the Al₂O₃ ALE process. In both cases, the MCPC decreases rapidly with increasing exposure time and asymptotically approaches a saturation point, indicating that each half-reaction becomes self-limiting beyond a certain exposure threshold. These saturation behaviors confirm that both precursors operate via self-limiting surface chemistry, a defining feature of atomic layer etching processes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| SF₄ Exposure Time (s) | MCPC (ng/cm²) |\\n|------------------------|----------------|\\n| 0 | 3.8 |\\n| 0.5 | 2.1 |\\n| 1 | 1.1 |\\n| 2 | 0.7 |\\n| 3 | 0.5 |\"},{\"panel_id\":\"b\",\"text\":\"| Sn(acac)₂ Exposure Time (s) | MCPC (ng/cm²) |\\n|-----------------------------|----------------|\\n| 0 | 3.6 |\\n| 0.5 | 2.3 |\\n| 1 | 1.2 |\\n| 2 | 0.6 |\\n| 3 | 0.4 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SF₄.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The decreasing trends in MCPC for both SF₄ and Sn(acac)₂ exposures show that each precursor reaction is self-limiting, a hallmark of ALE chemistry. Initially, as exposure time increases, there is a sharp drop in MCPC due to rapid surface reactions. However, beyond ~2 seconds, additional exposure yields diminishing returns, indicating saturation of available reactive sites. This suggests that both the fluorination and ligand-exchange steps are well-controlled and reach completion under sufficient exposure durations, enabling precise layer-by-layer material removal.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Self-limiting reaction, efficient early-stage removal, surface saturation by ~2–3 s, stable MCPC plateau for repeatability\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_22_e491b4d038fdd578fa1d521ec6367993f5d8e0ca7e5b91f94752170244c6b21d.jpg","caption":"","id":"train/atomic-layer-etching/experimental-usecase/22/e491b4d038fdd578fa1d521ec6367993f5d8e0ca7e5b91f94752170244c6b21d","sample_id":"atomic-layer-etching/experimental-usecase/22/e491b4d038fdd578fa1d521ec6367993f5d8e0ca7e5b91f94752170244c6b21d","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/e491b4d038fdd578fa1d521ec6367993f5d8e0ca7e5b91f94752170244c6b21d.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/e491b4d038fdd578fa1d521ec6367993f5d8e0ca7e5b91f94752170244c6b21d.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/Thermal Atomic Layer Etching of MoS2 Using MoF6 and H2O.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"not_found"},"width":506,"height":800,"image_format":"jpeg","image_sha256":"9c21ae02a40bfa3e8c2fd41a3898e76c4d48bc310ed6d9d83c714da666003cee","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":507,"height":394},{"panel_id":"b","x":0,"y":398,"width":502,"height":396}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Panel (a) shows the mass loss (ng/cm²) of material as a function of MoF₆ dose duration, revealing rapid initial etching followed by saturation beyond ~1 second.\"},{\"panel_id\":\"b\",\"text\":\"Panel (b) plots mass loss against H₂O dose time, similarly showing an initial sharp increase that levels off near 4 seconds. The graphs indicate self-limiting behaviour characteristic of atomic layer etching (ALE), where further dosing does not result in additional material removal beyond a certain threshold.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| MoF₆ dose (s) | Mass Loss (ng/cm²) |\\n|---|---|\\n| 0.0 | 0.0 |\\n| 0.5 | 16.0 |\\n| 1.0 | 18.0 |\\n| 1.5 | 18.0 |\\n| 2.0 | 18.0 |\\n| 2.5 | 18.0 |\\n| 3.0 | 18.0 |\"},{\"panel_id\":\"b\",\"text\":\"| H₂O dose (s) | Mass Loss (ng/cm²) |\\n|---|---|\\n| 0.0 | 0.0 |\\n| 0.5 | 9.0 |\\n| 1.0 | 16.0 |\\n| 2.0 | 19.0 |\\n| 3.0 | 22.0 |\\n| 4.0 | 22.0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"MoF₆: Mass loss quickly reaches saturation around 0.5–1.0 s, H₂O: Mass loss increases over a wider dose range, saturating near 3–4 s.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They exhibit self-limiting behaviour, indicating atomic layer etching (ALE) characteristics\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The data show that MoF₆ achieves most of its etching effect within the first second, after which further increases in dose do not increase mass loss. This suggests a surface-limited reaction where all available reactive sites are quickly consumed. In contrast, H₂O dosing results in a more gradual increase in mass loss, reaching a plateau around 4 seconds. This indicates that the removal step may depend on the availability of MoF₆-reacted surface species and the diffusion/reactivity of H₂O, making it the rate-limiting factor in the overall ALE cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_29_fig_2.jpg","caption":"FiG. 2. EPC of ALE for the AlGaN film as a function of Ar plasma exposure time in the removal step with a self-bias voltage of $45~\\mathrm{V}$ .","id":"train/atomic-layer-etching/experimental-usecase/29/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/29/fig_2","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/Atomic layer etching of AlGaN using Cl2 and Ar gas.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":536,"height":464,"image_format":"jpeg","image_sha256":"aac5e9311a01a29cb3df5c5509a3d2e65b598aac45acf77e4f48cd7b6e07f888","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":533,"height":460}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between Ar plasma exposure time and etch depth per cycle. As the exposure time increases, the etch depth also increases, till it soft-saturates.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ar Plasma Exposure Time (s) | Etch Depth per Cycle (nm) |\\n|---|---|\\n| 0 | 0 |\\n|10|0.3|\\n| 25 | 0.43 |\\n|30|0.55|\\n| 50 | 0.5 |\\n| 100 | 0.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etching is probably induced by the ion influence from the plasma. If there is no plasma, there is also no etching.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With ALE only the modified layer is selectively etched. It seems that the modification depth is roughly 0.5 nm, so there is soft-saturation at this level.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No there is no such benefit, saturation means that there is no more significant increase.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Plasma pressure, with high pressures, there are usually less energetic ions bombarding the substrate, whereas low-pressure plasmas do show this.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_30_fig_1.jpg","caption":"Fig. 1. EPC of GaN as a function of bias voltage for a fixed Ar step time of $5\\mathrm{s}$ .","id":"train/atomic-layer-etching/experimental-usecase/30/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/30/fig_1","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/Atomic layer etching of GaN and AlGaN.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":603,"height":395,"image_format":"jpeg","image_sha256":"c1b3c0271e04ea25c2cafacef1320ebb00e3d0b6ff3917a3d37b1552ac799ca0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":7,"width":598,"height":386}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows GaN etch per cycle (EPC) versus bias voltage for an Ar removal step time of 5 s. EPC increases at low bias, is nearly constant around 0.4 nm from about 50 to 100 V (self limited ALE window), and rises strongly above about 100 V.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Bias Voltage [V] | EPC [nm] |\\n|----------------|---------|\\n| 0 | 0.0 |\\n| 50 | 0.3 |\\n| 100 | 0.4 |\\n| 150 | 1.1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The x axis is bias voltage in V, and the y axis is EPC in nm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE window is about 50 to 100 V. In this region EPC is almost constant at about 0.4 nm, consistent with a self limited removal per cycle rather than steadily increasing sputter yield.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It suggests a transition toward physical sputtering, where ion energy exceeds the sputtering threshold for GaN. In that regime, EPC rises with increasing bias because removal is no longer limited mainly by the prior chlorination step.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ion energy is insufficient to fully remove the chlorinated, modified surface layer each cycle.\\n\\nSome modified species remain, so net removal per cycle stays low until bias is increased into the self limited regime.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_32_figure_3.jpg","caption":"Figure 3. InGaAs etch depth measured as a function of (a) first grid voltage (acceleration grid voltage) of the ICP ion gun for chlorine species (ions/radicals) exposure time of $15\\mathrm{min}$ and (b) the chlorine adsorption time for the first grid voltages of $+10$ and $+15\\mathrm{V}$ during the chlorine adsorption step. The other conditions are the same as those in figure 2.","id":"train/atomic-layer-etching/experimental-usecase/32/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/32/figure_3","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/Atomic layer etching of InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":667,"height":1075,"image_format":"jpeg","image_sha256":"db23ff27671621577ed208467a5e144d1f45ce41359de9ca1d073be5ac563ede","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":6,"y":545,"width":658,"height":527},{"panel_id":"a","x":2,"y":1,"width":662,"height":526}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Line chart showing InGaAs etch depth as a function of acceleration grid voltage for a fixed Cl species exposure time of 15 min. Etching is negligible below 10 V and increases sharply between 15 and 30 V, indicating a threshold-like voltage dependence.\"},{\"panel_id\":\"b\",\"text\":\"Multiple line chart showing InGaAs etch depth as a function of Cl species exposure time at acceleration voltages of 15 V and 10 V. Etching proceeds more rapidly at 15 V, while the 10 V condition shows a delayed onset and substantially lower etch depth over the same time range.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Acceleration Voltage (V) | Etch Depth (Å) |\\n|---|---|\\n| 0 | 0 |\\n| 5 | 0 |\\n| 10 | 0 |\\n| 15 | ~45 |\\n| 20 | ~75 |\\n| 30 | ~150 |\"},{\"panel_id\":\"b\",\"text\":\"| Exposure Time (min) | 15V Etch Depth (Å) | 10V Etch Depth (Å) | \\n|---|---|---| \\n| 0 | 0 | 0 | \\n| 5 | 0 | 0 | \\n| 10 | 0 | 0 | \\n| 15 | ~5 | 0 | \\n| 25 | ~20 | ~5 | \\n| 35 | ~65 | ~15 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After ~10–15 min, 15 V increases much faster, reaching ~60–70 Å by ~35 min, while 10 V rises slowly to only ~10–20 Å by ~35 min. This indicates a strong voltage/ion-energy dependence of the etch step.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"15 V.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"15 min.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_32_figure_4.jpg","caption":"Figure 4. Sputter etch depth of InGaAs itself during the $\\mathrm{Ar^{+}}$ ion gun operation as a function of (a) different first grid voltages for the $\\mathrm{Ar^{+}}$ ion exposure time of 50 s/cycle and (b) $\\mathrm{Ar^{+}}$ ion exposure time for the first grid voltages of $+10$ and $+30\\mathrm{V}$ . The sputtering was cyclic processed for 100 cycles without adsorption of chlorine during the chlorine adsorption step. The power of the ICP ion gun for the $\\mathrm{Ar^{+}}$ ion was maintained at $200\\mathrm{W}$ at the process chamber pressure of $3.0\\mathrm{mTorr}$ Ar. The second grid voltage to the ICP ion gun was maintained at $-100\\mathrm{V}$ for a directional ion beam while the third grid voltage was grounded.","id":"train/atomic-layer-etching/experimental-usecase/32/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/32/figure_4","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/Atomic layer etching of InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":661,"height":994,"image_format":"jpeg","image_sha256":"fc6eb0908efcbf69b8ce10b29aff9a348ccf44188b35b627d5c0007ac0e62b00","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":4,"y":524,"width":653,"height":467},{"panel_id":"a","x":0,"y":0,"width":660,"height":513}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Scatter plot of Ar⁺ sputter etch depth vs acceleration grid voltage (50 s/cycle × 100 cycles). Etching is negligible up to 10 V, becomes measurable by ~30 V, and increases sharply by 50 V, indicating a strong voltage/ion-energy dependence.\"},{\"panel_id\":\"b\",\"text\":\"Multiple scatter plot showing InGaAs etch depth as a function of Ar⁺ ion exposure time at acceleration grid voltages of 10 V and 30 V. The 30 V condition produces substantially higher etch depths over the same exposure times, indicating a strong dependence of sputter yield on ion energy.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Acceleration Grid Voltage (V) | Etch Depth (Å) |\\n|---|---|\\n| 0 | 0 |\\n| 10 | 0 |\\n| 30 | ~10 |\\n| 50 | ~60 |\"},{\"panel_id\":\"b\",\"text\":\"| Ar+ Ion Exposure Time (sec) | 30V Etch Depth (Å) | 10V Etch Depth (Å) | \\n|---|---|---| \\n| 0 | 0 | 0 | \\n| 50 | ~20 | 0 | \\n| 100 | ~95 | 0 | \\n| 150 | ~210 | ~75 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Etch depth increases non-linearly with exposure time for both, but 30 V increases much faster (≈20 → 95 → 210 Å) while 10 V stays ~0 up to 100 s and only rises by 150 s (~75 Å). This implies sputtering is strongly ion-energy dependent; at lower voltage there’s an effective “low-yield” regime over much of the time range.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 30 V.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50 s/cycle × 100 cycles.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_33_fig_4.jpg","caption":"FIG. 4. EPC of the TiN films as a function of the radical exposure time. The dashed line is provided as a guide to the eye only.","id":"train/atomic-layer-etching/experimental-usecase/33/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/33/fig_4","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/Atomic layer etching of titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":669,"height":556,"image_format":"jpeg","image_sha256":"072141a5663eb4ac2d7a9decfef3d37409acf772c6bd9a038ad28b2174472489","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":673,"height":534}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between Radical Exposure Time (in seconds) and EPC (in nm/cycle). There is a positive correlation where EPC increases as the Radical Exposure Time increases, but form as saturation is observed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Radical Exposure Time (s) | EPC (nm/cycle) |\\n|---|---|\\n| 0 | 0 |\\n| 10 | 0.9 |\\n| 30 | 0.6|\\n| 50 | 1.2 |\\n| 60 | 2.8 |\\n| 120 | 3 |\\n| 240 | 3.3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems as if the EPC is soft-saturated, meaning that additional radical exposure time after 250 s will still increase the EPC.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, there is mostly overlap for longer exposure times. The shorter exposure times shows less overlap.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Somewhere between 50 and 100 of radical exposure time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3.4 nm/cycle.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_33_fig_6.jpg","caption":"FIG. 6. Etching amount of TiN films as a function of the number of ALE cycles. The radical exposure time and IR annealing time were set at 60 and $30~\\mathrm{s}$ , respectively. The dashed line on the plot was obtained from least squares fitting to the data points.","id":"train/atomic-layer-etching/experimental-usecase/33/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/33/fig_6","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/Atomic layer etching of titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":669,"height":603,"image_format":"jpeg","image_sha256":"aec139ef67325da47105d391e8ce8f0248b4f9b6770728ad5f7a1eb8c22a9e36","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":667,"height":598}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows a positive linear relationship between the number of cycles and etching amount, indicating that the etching amount increases proportionally with the number of cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | Etching Amount (nm) |\\n|-----------------|--------------------|\\n| 0 | 0 |\\n| 2 | 3 |\\n| 4 | 10 |\\n| 6 | 12 |\\n| 8 | 17 |\\n| 10 | 19 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There is no delay in the beginning or enhanced etching indicating that there is nbo starting effect.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The EPC can be determined by calculating the slope of the linear fit through the data points.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The EPC is 1.9 nm/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 5 cycles.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_34_fig_1.jpg","caption":"FIG. 1. Etching rate of $\\mathrm{CF_4}$ dry etching for $\\mathrm{Al}_2\\mathrm{O}_3$ films at various $\\mathrm{CF_4}$ plasma pressures.","id":"train/atomic-layer-etching/experimental-usecase/34/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/34/fig_1","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/CF4 plasma-based atomic layer etching of Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":666,"height":506,"image_format":"jpeg","image_sha256":"a544a73ab1cc9aa0aa9082112e164a1d4746673aaaeb772605cb63f8ff8d37f5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":666,"height":506}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a scatter plot showing how the etching rate of Al₂O₃ during CF₄ dry etching varies with working pressure. The data reveal a steep decline in etching rate as pressure increases from a high rate at near-zero pressure to almost negligible etching above ~1 Torr indicating strong pressure-dependent suppression of etching efficiency.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Working pressure (Torr)|Etching rate (nm/min)|\\n|------------------------|---------------------|\\n|0.0|4.5|\\n|0.2|2.8|\\n|0.3|1.1|\\n|0.6|0.3|\\n|1.0|0.5|\\n|1.4|0.2|\\n|2.0|0.2|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding the pressure dependence is essential because it allows engineers to precisely control the etching process for high selectivity and accuracy. Lower pressures provide higher etching efficiency, useful for rapid material removal, while higher pressures reduce etching, enabling self-limiting or low-damage processing. This knowledge helps optimize process windows for applications such as device patterning, surface preparation, and atomic layer etching, ensuring high-quality results and consistency across wafers.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 0 Torr, the etching rate is approximately 4.5 nm/min, while at 2 Torr, it decreases to about 0.2 nm/min.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Reduced mean free path of reactive species, Increased collision frequency in the plasma, Lower energy of reactive ions reaching the surface, Decreased dissociation efficiency of CF₄ at higher pressure\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_34_fig_5.jpg","caption":"FIG. 5. Saturation curve of the $\\mathrm{CF}_4$ plasma dosage.","id":"train/atomic-layer-etching/experimental-usecase/34/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/34/fig_5","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/CF4 plasma-based atomic layer etching of Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":675,"height":511,"image_format":"jpeg","image_sha256":"17d2c7c5e0054bc5d0f4703fbdfc08db569fb5987defb9a02e73fa2c13366d6e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":511}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a saturation curve showing how the etching-per-cycle rate increases sharply during the initial seconds of CF₄ plasma treatment and then gradually plateaus as the exposure time reaches 20 seconds. This indicates a self-limiting etching behavior characteristic of atomic layer processes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| CF4 plasma treatment (s)|Etching per cycle (nm)|\\n|-------------------------|----------------------|\\n|0|0.00|\\n|5|0.20|\\n|10|0.25|\\n|20|0.24|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding saturation helps ensure precise, self-limiting etching in ALE processes. By identifying the plasma dose at which etching stops increasing (~10 s), operators can optimize process time, reduce energy consumption, and avoid overexposure that may damage substrates. This allows tight control of etch depth and improves film uniformity and reproducibility in nanofabrication.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 5 s, the etching is ~0.20 nm/cycle;\\nat 10 s, it rises to ~0.25 nm/cycle;\\nat 20 s, it remains approximately unchanged (~0.24 nm/cycle), showing saturation.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Higher plasma dosage activates more reactive fluorine species, Increased activation enhances etching-per-cycle at lower times, Beyond ~10 s, all reactive sites saturate, As a result, etching-per-cycle plateaus.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_34_fig_6.jpg","caption":"FIG. 6. Saturation curve of the DMAC dosage.","id":"train/atomic-layer-etching/experimental-usecase/34/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/34/fig_6","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/CF4 plasma-based atomic layer etching of Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":669,"height":500,"image_format":"jpeg","image_sha256":"9c4ac08943d54a961cd43ca1654ab85ca51ed08f6e637d522befcd3ac7d03292","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":500}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows etching per cycle as a function of DMAC pulse time: etching increases rapidly at short pulse times and then approaches a plateau (~0.23–0.25 nm per cycle) beyond about 1 s, indicating saturation of the DMAC dosage.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| DMAC pulse time (s)|Etching per cycle (nm)|\\n|--------------------|----------------------|\\n|0.0|0.00|\\n|0.2|0.15|\\n|0.5|0.16|\\n|1.0|0.25|\\n|2.0|0.23|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plateau indicates that after approximately 1 second of DMAC pulsing, the etching process reaches its maximum efficiency, meaning the surface becomes fully saturated and additional pulse time does not significantly enhance etching. This helps identify the optimal processing window where the reaction is both time-efficient and stable, avoiding unnecessary overexposure of DMAC.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etching increases quickly at short pulse times but remains nearly constant at around 0.23–0.25 nm/cycle at longer times.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Self-limiting reaction behavior, Saturation of available reactive sites, Limited additional etching even with longer DMAC exposure\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig1.jpg","caption":"Fig.1. Etched amount of the blanket $\\mathrm{TiO_2}$ as a function of the $\\mathrm{CF_4}$ plasma treatment time (30 and 60 s).","id":"train/atomic-layer-etching/experimental-usecase/36/fig1","sample_id":"atomic-layer-etching/experimental-usecase/36/fig1","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":608,"height":514,"image_format":"jpeg","image_sha256":"591da360b646f6cdf507c6630eab0c2a38123045a8b66bfcb19c1aac97b8474a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":2,"width":597,"height":510}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between plasma treatment time (s) and the etched amount (nm), indicating a linear increase.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| plasma treatment (s) | etched amount (nm) |\\n|---|---|\\n| 0 | 0 |\\n| 15 | 2.58 |\\n| 30 | 6.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The error bar spans nearly 1 nm or a 6.6 nm measurement. It is a non-negligible variation. This suggests that it might be difficult to precisely control the process at the angstrom level often required for device manufacturing.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is not self-limiting. The linearity indicates this is a continuous etching process, where the amount removed is directly proportional to time. Self-limiting process would show a plateau after a certain time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It stays roughly constant over time.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_4.jpg","caption":"Fig. 4. Cyclic number dependence of the amount of blanket $\\mathrm{TiO_2}$ etching with cyclic $\\mathrm{C_4F_8}$ and $\\mathrm{O_2}$ plasma.","id":"train/atomic-layer-etching/experimental-usecase/36/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_4","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":450,"image_format":"jpeg","image_sha256":"a2787eebb6ec5273de9e07707ac89bef8be4e24b4183edb22bb11bd4f793e670","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":669,"height":445}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows a linear relationship between the number of cycles and the amount of blanket TiO2 etched (in nm), indicating a consistent increase with each cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of cycles | blanket TiO2 etched amount (nm) |\\n|---|---|\\n| 0 | 0 |\\n| 1 | 0.69 |\\n| 4 | 2.89 |\\n| 8 | 5.66 |\\n| 12 | 8.65 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Accumulated process variations.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approx. 0.71 nm/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It stays at approximately the same speed.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_5.jpg","caption":"Fig. 5. CF polymer thickness on the blanket $\\mathrm{TiO_2}$ film for different $\\mathrm{C_4F_8}$ plasma treatment times.","id":"train/atomic-layer-etching/experimental-usecase/36/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_5","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":452,"image_format":"jpeg","image_sha256":"8518c9801fabbe0cdf5dba12c68b8114acc2d300ba4926bd746f7bb6fb23dfd3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":4,"width":668,"height":445}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between the duration of C₄F₈ plasma treatment (in s) and the thickness of the CF polymer formed (in nm), indicating a linear relationship between them.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| C₄F₈ plasma treatment time (s) | Thickness of CF polymer (nm) |\\n|---|---|\\n| 0 | 0 |\\n| 10 | 3.53 |\\n| 30 | 13.11 |\\n| 60 | 26.91 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It stays roughly constant.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"30 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The approximate deposition rate is 0.46 nm/s (based on the slope).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, it is not. If the process were self-limiting, the graph would rise and then plateau, once the surface is fully covered. The plot shows a linear increase, meaning the polymer continues to grow thicker and thicker indefinitely as long as the plasma is applied.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_40_fig_3.jpg","caption":"FIG. 3. (a) TiN ALE etch per cycle (EPC) vs substrate table temperature. (b) EPC vs $\\Omega_2$ gas exposure time with in situ HF exposure time fixed at $10s$ at $300^{\\circ}C$ c) EPC vs in situ HF time with $\\Omega_2$ exposure time fixed at $2s$ at $300^{\\circ}C$ The etch rates are observed to saturate with exposure time, demonstrating the self-limiting nature of the ALE process. The dashed lines are guides to the eye.","id":"train/atomic-layer-etching/experimental-usecase/40/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/40/fig_3","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/Isotropic plasma-thermal atomic layer etching of.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":1408,"height":433,"image_format":"jpeg","image_sha256":"6ea1080e1582cd6113625c32aabf7de6b7ae8c9f9fba7f7837ddb25bfc1ae1c3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":42,"width":479,"height":387},{"panel_id":"b","x":484,"y":45,"width":457,"height":384},{"panel_id":"c","x":953,"y":43,"width":452,"height":382}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch rate increases with increasing temperature.\"},{\"panel_id\":\"b\",\"text\":\"The etch rate increases with oxygen exposure time up to 2 seconds, then plateaus.\"},{\"panel_id\":\"c\",\"text\":\"The etch rate increases with in-situ HF exposure time up to 15 seconds, then plateaus\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Etch rate (Å/cycle) |\\n|---|---|\\n| 150 | 1.10 |\\n| 175 | 1.90 |\\n| 200 | 2.45 |\\n| 250 | 3.10 |\\n| 300 | 3.30 |\\n| 350 | 3.28 |\"},{\"panel_id\":\"b\",\"text\":\"| Oxygen exposure time (s) | Etch rate (Å/cycle) |\\n|---|---|\\n| 0.0 | 0.10 |\\n| 0.5 | 1.65 |\\n| 1.0 | 2.40 |\\n| 2.0 | 2.95 |\\n| 4.0 | 2.95 |\\n| 6.0 | 2.92 |\"},{\"panel_id\":\"c\",\"text\":\"| In-situ HF exposure time (s) | Etch rate (Å/cycle) |\\n|---|---|\\n| 0.0 | -0.20 |\\n| 1.0 | 0.55 |\\n| 2.5 | 1.25 |\\n| 5.0 | 2.30 |\\n| 10.0 | 3.05 |\\n| 15.0 | 3.10 |\\n| 20.0 | 3.05 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 seconds for O2 gas exposure and 10 seconds for in-situ HF exposure, both at the onset of saturation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The saturation curves demonstrate the self-limiting nature of both half-reactions in the ALE process. In subfigure (b), the oxidation step saturates because oxygen diffusion slows as the TiO2 layer thickens. In subfigure (c), the etching step saturates because the in-situ HF selectively removes only the TiO2 layer and stops when it reaches the underlying TiN. This dual self-limiting behavior is essential for achieving precise, reproducible etch depths with angstrom-scale control in each cycle.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate increases from 1.1 Å/cycle at 150°C to 3.2 Å/cycle at 300°C due to enhanced oxygen diffusion into TiN at higher temperatures, which produces thicker TiO2 layers during each oxidation step. Above 300°C, the etch rate plateaus because the oxide thickness becomes limited by factors other than diffusion kinetics, such as the thermodynamic stability of the oxide layer or surface reaction saturation. This plateau behavior is consistent with observations in other thermal ALE processes for TiN.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 3 Å/cycle.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_43_fig_5.jpg","caption":"Fig. 5. EPC versus temperature plot for the ALE of $\\mathrm{Al_2O_3}$ by 30 cycles of $\\mathrm{NF_3}$ remote plasma for $4\\mathrm{s}$ and TMA for $3\\mathrm{s}$ . The etching amount was determined by ellipsometry.","id":"train/atomic-layer-etching/experimental-usecase/43/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/43/fig_5","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/Surface reaction during thermal atomic layer etching of aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":656,"height":661,"image_format":"jpeg","image_sha256":"91f35c295f4360424302162140d58d683c8d58e95201dea4181c258e40a9a4bb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":7,"width":654,"height":652}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This line chart represents the Etch Per Cycle (EPC) Å/cycle for Atomic Layer Etching (ALE) of Al₂O₃ as a function of substrate temperature. The process uses cycles of NF₃ remote plasma followed by TMA exposure(3 s duration). EPC slowly increases with temperature up to a point (~250°C), then a rapid etch rate is observed and then stabilizes. This thickness loss was measured via ellipsometry.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Substrate Temperature (°C) | Etch Per Cycle (Å/cycle) |\\n|----------------------------|--------------------------|\\n| 150 | -0.1 |\\n| 175 | -0.1 |\\n| 200 | 0.0 |\\n| 225 | 0.4 |\\n| 250 | 1.4 |\\n| 275 | 2.6 |\\n| 290 | 3.8 |\\n| 300 | 4.2 |\\n| 320 | 4.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Exposure to NF₃ remote plasma for 4 s to fluorinate the surface. \\n\\nExposure to TMA for 3 s to perform ligand exchange and remove the surface species.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thermal ALE process is mandatory. A plasma-enhanced removal step (Ar⁺ sputter) causes physical bombardment damage, which would destroy the atomic lattice of graphene. The thermal TMA step in this process provides a chemically selective and gentle removal mechanism via volatile AlF₃ formation, enabling damage-free etching necessary for 2D materials, despite the low or moderate temperature requirement.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher temperatures typically increase the thermal energy available for diffusion and reaction.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"NO, At 150°C, the EPC is very low (~0.5 Å/cycle) and is on the steep part of the curve. This means tiny temperature fluctuations in the reactor could cause significant percentage variations in the etch rate, destroying the atomic-scale depth control required. For reliable control, one must operate in the temperature-independent saturation regime (near 250-300°C) where the rate is stable.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_45_figure_4.jpg","caption":"Figure 4. (a) Etch rates for TiN versus $\\mathrm{O}_3$ exposure time with constant HF exposure time of $1.0\\mathrm{~s}$ . (b) Etch rates for TiN versus HF exposure time with constant $\\mathrm{O}_3$ exposure time of $3.0\\mathrm{~s}$ .","id":"train/atomic-layer-etching/experimental-usecase/45/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/45/figure_4","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/Thermal Atomic Layer Etching of Titanium Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":675,"height":969,"image_format":"jpeg","image_sha256":"c48c3689e5e24b18e8fc6c836ce3e55ff34230ef465f3b4d25ea58fe01dfb9c6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":667,"height":472},{"panel_id":"b","x":1,"y":493,"width":667,"height":477}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch rate increases with increasing O₃ exposure time at 250°C\"},{\"panel_id\":\"b\",\"text\":\"The etch rate increases with increasing HF exposure time at 250°C\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| O3 Exposure Time (s) | Etch Rate (Å/cycle) |\\n|---|---|\\n| 0.0 | 0.00 |\\n| 0.5 | 0.08 |\\n| 1.0 | 0.11 |\\n| 1.5 | 0.17 |\\n| 2.0 | 0.17 |\\n| 2.5 | 0.20 |\\n| 3.0 | 0.19 |\\n| 4.0 | 0.22 |\"},{\"panel_id\":\"b\",\"text\":\"| HF Exposure Time (s) | Etch Rate (Å/cycle) |\\n|---|---|\\n| 0.0 | 0.00 |\\n| 0.5 | 0.14 |\\n| 0.75 | 0.18 |\\n| 1.0 | 0.19 |\\n| 1.25 | 0.20 |\\n| 1.5 | 0.21 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The saturation behavior confirms that both half-reactions are self-limiting. The O₃ reaction self-terminates because the TiO₂ layer acts as a diffusion barrier preventing further oxidation. The HF reaction self-terminates because it can only remove the finite TiO₂ layer formed during oxidation—HF does not etch TiN directly.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Neither reactant alone etches TiN-O₃ only oxidizes the surface, and HF cannot etch TiN directly. Both half-reactions are required for etching.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Self-limiting behavior ensures that etch depth depends only on cycle count, not on precise exposure timing or local reactant concentration variations. This enables atomic-level thickness control and uniform etching across large wafers, which is essential for advanced device fabrication.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3 s for O₃ and 1 s for HF, yielding the optimized sequence 3-30-1-30 (with 30 s N₂ purges).\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_13.jpg","caption":"Figure 13. Etch rates at $170^{\\circ}\\mathrm{C}$ for $\\mathrm{TiO_2}$ : (a) $\\mathrm{BCl_3}$ with a constant $\\mathrm{WF_6}$ dose time of $0.2\\mathrm{s}$ and (b) $\\mathrm{WF_6}$ dose time with a constant $\\mathrm{BCl_3}$ exposure time of $1\\mathrm{s}$ . The ALE reactor was conditioned with $200\\mathrm{TiO_2}$ ALD cycles after every 3 subsequent ALE runs.","id":"train/atomic-layer-etching/experimental-usecase/46/figure_13","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_13","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":914,"height":369,"image_format":"jpeg","image_sha256":"0b7388362a627306225c52e0dd3c30090d1834a753ffa788bd0369b67b6fce9f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":465,"height":367},{"panel_id":"b","x":458,"y":2,"width":455,"height":366}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure characterizes the saturation behavior of a thermal Atomic Layer Etching (ALE) process for Titanium Dioxide , Etch rate as a function of BCl₃ dose time at 170 °C, showing clear saturation and self-limiting behavior characteristic of thermal ALE.\"},{\"panel_id\":\"b\",\"text\":\"Etch rate as a function of WF₆ dose time at 170 °C, also exhibiting saturation, confirming that the TiO₂ etching process follows an ALE mechanism rather than continuous etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| BCl₃ Dose Time (s) | Etch Rate (Å/cycle) |\\n|------------------:|-------------------:|\\n| 0.0 | 0.00 |\\n| 0.1 | 0.44 |\\n| 0.5 | 0.65 |\\n| 1.0 | 0.68 |\\n| 1.5 | 0.72 |\"},{\"panel_id\":\"b\",\"text\":\"| WF₆ Dose Time (s) | Etch Rate (Å/cycle) |\\n|-----------------:|-------------------:|\\n| 0.0 | 0.10 |\\n| 0.1 | 0.50 |\\n| 0.2 | 0.68 |\\n| 0.4 | 0.60 |\\n| 0.5 | 0.64 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1 . WF₆ pulse: 0.2 s\\n\\n, 2. N₂ purge: 45 s\\n\\n, 3. BCl₃ pulse: 1.0 s\\n\\n, 4. N₂ purge: 45 s\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 0.1 s, the process operates in the unsaturated regime (the steep slope of the curve), where the etch rate is highly sensitive to small fluctuations in gas flow or pressure. In contrast, 1.0 s is in the saturated regime (plateau), where the rate is stable. Operating at 0.1 s risks severe non-uniformity, especially in high-aspect-ratio structures where gas diffusion is slow.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Chamber Memory Effect. Without conditioning, the reactant gases (WF₆ andBCl₃) would partially react with or adsorb onto the chamber walls instead of the sample, effectively lowering the partial pressure at the wafer surface. This would likely cause the saturation curves to shift to the right (requiring longer doses) or show artificially lower etch rates until the walls eventually became seasoned.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Surface Site Saturation. The surface is fully fluorinated (or modified) by the WF₆; once all available surface bonds have reacted, no further chemical modification can occur regardless of excess exposure, limiting the material removed in the subsequent step.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_6.jpg","caption":"Figure 6. (a) Thickness and (b) refractive index at $632.8~\\mathrm{nm}$ of samples with $5.5\\mathrm{nm}$ $\\mathrm{TiO_2}$ followed by 0, 15, 25, 50, and $100\\mathrm{WF}_6$ doses at $220^{\\circ}\\mathrm{C}$ , measured with spectroscopic ellipsometry. Lines are a guide to the eye.","id":"train/atomic-layer-etching/experimental-usecase/46/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_6","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":986,"height":389,"image_format":"jpeg","image_sha256":"32a4fa18ba9b0b54af0dd0de1536eba71f513996e938fc613e4df6ab900f413a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":2,"width":465,"height":385},{"panel_id":"b","x":514,"y":1,"width":469,"height":385}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This line chart represents the change in film thickness with increasing WF₆ doses at 220 °C, showing a linear decrease that indicates progressive etching or consumption of the 5.5 nm TiO₂ film.\"},{\"panel_id\":\"b\",\"text\":\"This line chart represents the change in refractive index (at 632.8 nm) with increasing WF₆ doses, showing a sharp initial drop (0–25 doses) followed by stabilization at ~1.85, indicating initial chemical modification before steady-state etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of WF₆ Doses | Thickness (Å) |\\n|--------------------:|--------------:|\\n| 0 | 56.00 |\\n| 10 | 58.64 |\\n| 25 | 53.11 |\\n| 50 | 50.34 |\\n| 100 | 33.71 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of WF₆ Doses | Refractive Index @ 632.8 nm |\\n|--------------------:|----------------------------:|\\n| 0 | 2.31 |\\n| 10 | 2.29 |\\n| 25 | 1.88 |\\n| 50 | 1.83 |\\n| 100 | 1.90 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Deposition: Deposition of a 5.5 nm TiO₂ starting layer.\\n\\nTreatment: Exposure to a specific number of WF₆ doses (0, 15, 25, 50, or 100) at 220°C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The stepwise, dose-dependent index change allows spatial patterning of the refractive index by controlling the number of WF₆ doses across different regions of the waveguide. This enables the fabrication of gradient-index profiles for improved light confinement and mode shaping.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"WF₆ fluorination is superior for independent control. It changes the index by altering composition while also thinning the film. Simply depositing a thinner film only changes thickness, not the intrinsic index. Fluorination offers two tuning knobs (dose for index, cycles for thickness).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"WF₆ fluorinates the TiO₂, converting it into a titanium oxyfluoride (TiOFₓ) or fluoride. Fluorine incorporation increases the film's band gap and lowers its density/polarizability, both of which directly cause a decrease in the refractive index.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_15_fig_7.jpg","caption":"FIG. 7. Etch per cycle as a function of $\\mathrm{Cl}_2$ impacts from MD simulations. $1000\\mathrm{Ar}^+$ ion impacts are used for the ion bombardment step in every case. The energy of the $\\mathrm{Ar}^+$ ions is $70\\mathrm{eV}$ .","id":"train/atomic-layer-etching/simulation-usecase/15/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/15/fig_7","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":675,"height":477,"image_format":"jpeg","image_sha256":"40acd0fa0dde7cbb89aeec51231ce66adea79a6f94b15d28ba93a3a96129aa33","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":8,"width":675,"height":469}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between the number of Cl₂ impacts and etch per cycle. The EPC initially increases rapidly with chlorine dose due to incomplete surface coverage, then saturates beyond ~1000 Cl₂ i impacts at ~0.9 Å/cycle. This plateau demonstrates the self-limiting behavior of ideal atomic layer etching, where additional chlorine does not increase material removal once the surface is fully chlorinated.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cl₂ Impacts | Etch per Cycle (Å/cycle) |\\n|----------------------|--------------------------:|\\n| 0 | 14.52 |\\n| 110 | 0.53 |\\n| 250 | 0.68 |\\n| 500 | 0.84 |\\n| 1000 | 0.85 |\\n| 2265 | 0.89 |\\n| 3000 | 0.92 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Because 250 impacts is in the non-saturated region (steep slope). Small fluctuations in gas flow or pressure at this point would cause large changes in the etch rate. At 1500 impacts, the process is on the plateau (saturated), so it is robust against small variations.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Speed vs. Precision. The ALE process is extremely slow (only 0.9 Å per full cycle) compared to continuous etching. The trade-off is accepting low throughput to gain atomic-level precision and control.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Site Saturation. At 500 impacts, active surface sites are still available. By 2500 impacts, every available surface bond is already occupied by a Chlorine atom (saturated). Since no new Chlorine can stick, the subsequent ion etch cannot remove any additional material, leading to the plateau.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Spontaneous Etching. It would indicate that the excess Chlorine is beginning to etch the silicon chemically on its own (without ions), destroying the self-limiting behavior that defines Atomic Layer Etching.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_11.jpg","caption":"Fig. 11. (a) The effect of the substrate velocity on the etching per cycle. (b) The effect of the moving substrate on etching per cycle to illustrate the uniformity of the etch.","id":"train/atomic-layer-etching/simulation-usecase/16/fig_11","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_11","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":667,"height":1178,"image_format":"jpeg","image_sha256":"d2c76494d148bce90e51cf13e87663c814534ce0cb6d252e1dbdbb2f542ef7dd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":3,"y":587,"width":658,"height":535},{"panel_id":"a","x":0,"y":0,"width":666,"height":522}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A scatter plot showing the relationship between velocity (mm/s) and etching per cycle (Å/cycle). The etching decreases as the velocity increases.\"},{\"panel_id\":\"b\",\"text\":\"A scatter plot showing the etching per cycle (Å/cycle) at different substrate positions (mm) for velocities of 80 mm/s, 120 mm/s, and 160 mm/s. The etching remains relatively constant across the substrate positions for each velocity.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Velocity (mm/s) | Etching per cycle (Å/cycle) |\\n|---|---|\\n| 0 | 0.47 |\\n| 50 | 0.42 |\\n| 100 | 0.26 |\\n| 150 | 0.15 |\"},{\"panel_id\":\"b\",\"text\":\"| Substrate position (mm) | Etching per cycle (Å/cycle) 80 |Etching per cycle (Å/cycle) 120 |Etching per cycle (Å/cycle) 160 |\\n|---|---|---|---|\\n| 0 | 0.36 | 0.22 | 0.1 |\\n| 0.1 | 0.36 | 0.22 | 0.1 |\\n| 0.2 | 0.36 | 0.22 | 0.1 |\\n| 0.3 | 0.36 | 0.22 | 0.1 |\\n| 0.4 | 0.36 | 0.22 | 0.1 |\\n| 0.5 | 0.36 | 0.22 | 0.1 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With increasing velocity, the exposure time is decreasing. Usually long exposure times result in better uniformity.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The parameter that is changed is the dosing time or exposure time. The exposure time scales with 1/velocity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The saturated EPC is 0.47 A/cycle, this is reached with a velocity below 40 mm/s.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.36 mm/s\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_10.jpg","caption":"Figure 10. Etch rate as measured by change in integrated absorbance of the $\\mathrm{Ti - O}$ vibrational modes from 400 to $960~\\mathrm{cm^{-2}}$ for each HF exposure. Temperature is varied from 80 to $300^{\\circ}C$","id":"train/atomic-layer-etching/simulation-usecase/20/figure_10","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_10","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":650,"height":658,"image_format":"jpeg","image_sha256":"402a0c3918af6a9ffc87775a8b91679c4b76868aa82a49425ef568ce55cc23bc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":3,"width":647,"height":651}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This line chart plots the etch rate (measured by the loss of integrated Ti-O IR absorbance per HF exposure) against temperature (80-300°C) for a titanium-based film, showing that the etch rate increases with temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Δ Int. Abs. Loss / HF Exposure |\\n|-----------------:|--------------------------------:|\\n| 80 | 0.00 |\\n| 100 | 0.02 |\\n| 120 | 0.05 |\\n| 140 | 0.07 |\\n| 160 | 0.25 |\\n| 180 | 1.00 |\\n| 200 | 1.10 |\\n| 220 | 1.30 |\\n| 240 | 1.90 |\\n| 260 | 2.10 |\\n| 280 | 2.50 |\\n| 300 | 3.80 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The cut-off temperature is approximately 150°C. Below this point, the curve is effectively flat (close to zero on the Y-axis), indicating that the reaction kinetics are insufficient to remove material.Minimum Reactor Setting: To ensure the film is successfully etched, the user must set the reactor to a minimum of 150°C (or ideally higher, such as 175°C, for a practical rate). Any setting below 150°C results in negligible absorbance loss, meaning the process essentially fails to etch the film.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The low-temperature region is flat (low sensitivity), while the high-temperature region is steep (high sensitivity).At 300 °C, the etch rate is high, enabling fast throughput, but the process is highly sensitive to temperature variations; a ±5 °C deviation causes large fluctuations in etch rate. At 100 °C, the etch rate is stable but negligible. Thus, while intermediate temperatures may offer a trade-off, operation at 300 °C requires stringent thermal control.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Since infrared absorbance follows the Beer–Lambert law and is proportional to the number of bonds, a fourfold increase in absorbance loss indicates that approximately four times more TiO2 is removed per HF exposure at 300 °C than at 175 °C. This strong temperature dependence underscores the need for precise thermal control to ensure a stable etch rate.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 250 °C, the etch rate shows strong temperature dependence; a 10 °C gradient (250 °C at the top vs. 240 °C at the bottom) would therefore cause slower etching at the bottom, leading to a tapered (V-shaped) profile. Achieving vertical sidewalls would require operation in a temperature-insensitive (saturated) regime, which is not observed here.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_11.jpg","caption":"Figure 11. Arrhenius plot obtained from etch rates versus temperature presented in Figure 10. Slope of the plot yields an activation barrier of $E_{\\mathrm{a}} = 42\\mathrm{kJ / mol}$ .","id":"train/atomic-layer-etching/simulation-usecase/20/figure_11","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_11","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":652,"height":655,"image_format":"jpeg","image_sha256":"4b899a56c6a03b4afe99259e1d74518cca115b4ce8c8e06437c224426399c4e5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":5,"width":646,"height":644}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure is an Arrhenius plot (logarithm of etch rate vs. inverse temperature) derived from the data in Figure 10. The linear fit (a dashed line) yields an activation energy (Eₐ) of 42 kJ/mol for the HF etching reaction of the Ti-based film.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 1000/T (K⁻¹) | ln[Δ Int. Abs. Loss / HF Exposure] |\\n|-------------:|------------------------------------:|\\n| 1.75 | 2.65 |\\n| 1.80 | 2.50 |\\n| 1.85 | 2.45 |\\n| 2.00 | 2.05 |\\n| 2.20 | 2.00 |\\n| 2.35 | 1.30 |\\n| 2.45 | 0.70 |\\n| 2.55 | 0.75 |\\n| 2.65 | 0.10 |\\n| 2.80 | 0.25 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The key step is taking the natural logarithm of the etch rate (ln(k)) and plotting it against the inverse absolute temperature (1/T). This transformation linearizes the Arrhenius equation, allowing the activation energy (Eₐ) to be determined directly from the slope of the best-fit line (-Eₐ/R).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Thermal HF Wet Etch: Pro: Selective, low damage. Con: Isotropic (etches in all directions).\\n\\nPlasma-Enhanced Dry Etch: Pro: Can be highly anisotropic via ion bombardment.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An Eₐ of 42 kJ/mol (a relatively low value, ~0.44 eV) indicates the rate-limiting step is a surface chemical reaction with a moderate thermal barrier. It is not diffusion-limited (which would be lower, ~10-20 kJ/mol) nor a very high-energy bond-breaking process, suggesting a specific, activated chemisorption or ligand-exchange step controls the etch rate.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It enables predictable process tuning and scaling. Engineers can precisely calculate the temperature change needed to achieve a target etch rate (e.g., to meet throughput specs) or to maintain a constant rate despite equipment variations, ensuring reproducible results during high-volume manufacturing.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_27_fig_6.jpg","caption":"FIG. 6. Synergy plot for GaN using $\\mathrm{SF}_6$ plasma and TMA at $300^{\\circ}\\mathrm{C}$ . The first 25 pulses only involve dosing $\\mathrm{SF}_6$ plasma, the next 25 pulses only TMA, and the last 75 cycles are full ALE cycles with both $\\mathrm{SF}_6$ plasma and TMA dosed. The inset shows the transition between only $\\mathrm{SF}_6$ pulses and only TMA pulses.","id":"train/atomic-layer-etching/simulation-usecase/27/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/27/fig_6","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":675,"height":511,"image_format":"jpeg","image_sha256":"70cbbc1d040332c998b1f83d703cf4869dcce8e0f3b3e92ee8e499447d0d13be","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":669,"height":507},{"panel_id":"b","x":2,"y":1,"width":309,"height":465}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Synergy plot demonstrating self-limiting behavior of the GaN ALE process at 300°C. During SF6 plasma-only pulses (0-25), the film thickness remains constant after an initial ~0.7 nm drop. During TMA-only pulses (25-50), thickness is also constant. Full ALE cycles (50-125) show linear etching with EPC of 0.41 nm/cycle initially (oxidized layer) decreasing to 0.31 nm/cycle (bulk GaN).\"},{\"panel_id\":\"b\",\"text\":\"Magnified view of the transition from SF6-only to TMA-only pulses, showing a 0.33 nm thickness decrease when TMA is first introduced, indicating that etching occurs during the TMA step.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulses/Cycles | Film Thickness (nm) | Phase / Rate |\\n|---|---|---|\\n| 0 | 43.5 | Half-cycle A |\\n| 10 | 43.4 | Half-cycle A |\\n| 20 | 43.3 | Half-cycle A |\\n| 25 | 43.2 | Half-cycle A (End) |\\n| 26 | 42.9 | Half-cycle B (Start, -0.33 nm drop) |\\n| 40 | 42.7 | Half-cycle B |\\n| 50 | 42.5 | Half-cycle B (End) |\\n| 60 | 38.5 | ALE (~0.41 nm/cycle) |\\n| 70 | 34.5 | ALE |\\n| 80 | 31.5 | ALE (~0.31 nm/cycle) |\\n| 90 | 28.5 | ALE |\\n| 100 | 25.5 | ALE |\\n| 110 | 22.5 | ALE |\\n| 120 | 19.5 | ALE |\\n| 125 | 18.0 | ALE (End) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The higher initial EPC corresponds to etching through the oxidized surface layer, while the lower EPC reflects etching of the more stoichiometric bulk GaN underneath.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"100%.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The synergy plot shows that neither SF6 plasma alone nor TMA alone causes continuous etching. The 0.33 nm thickness drop when switching from SF6-only to TMA-only pulses indicates that etching occurs during the TMA ligand-exchange step, which removes the fluorinated surface layer. Since no continuous etching is observed for either half-cycle individually, the process exhibits 100% synergy.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Removal of adventitious carbon, the heavily oxidized GaN surface layer, or changes in optical properties due to surface fluorination.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_27_fig_9.jpg","caption":"FIG. 9. RMS roughness as a function of etched thickness, plotted alongside the fitted change in RMS roughness as obtained using the curvature-dependent model from Ref. 85.","id":"train/atomic-layer-etching/simulation-usecase/27/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/27/fig_9","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":669,"height":536,"image_format":"jpeg","image_sha256":"94b5c28753734707a4c68352c23fa9037d890ef43a18001e349c054bcb95ca03","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":664,"height":527}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"RMS roughness evolution during GaN ALE at 300°C, comparing experimental data with a curvature-dependent smoothing model. Roughness decreases from ~2.6 nm to ~1.9 nm after 25 nm of etching. The rate of smoothing slows with increasing etch depth, in agreement with the model using a fitted diffusion parameter ε = 0.05×10⁻⁹ m.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Etched thickness (nm) | RMS roughness (nm) |\\n|---|---|\\n| 0 | 2.8 |\\n| 5 | 2.4 |\\n| 10 | 2.2 |\\n| 15 | 2.0 |\\n| 20 | 1.9 |\\n| 25 | 1.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The rate of smoothing decreases as the etched thickness increases. Initially, roughness drops rapidly from ~2.6 nm to ~2.2 nm within the first 10 nm of etching. Beyond this, the smoothing rate slows and begins to plateau. This behavior is captured by the curvature-dependent model, where high-curvature surface features etch faster initially, but as the surface becomes smoother, further improvement becomes more gradual.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It represents a measure of the fluorine diffusion rate into the GaN surface during the modification step.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"GaN has a lower ε (0.05×10⁻⁹ m) compared to amorphous Al2O3 (1.50×10⁻⁹ m), indicating GaN is more resistant to fluorination.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 1.9 nm.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_54aef25b16ec4f51b16e9d84a9a930c89371e345050a8d628002da041a377e5d.jpg","caption":"","id":"train/atomic-layer-etching/simulation-usecase/33/54aef25b16ec4f51b16e9d84a9a930c89371e345050a8d628002da041a377e5d","sample_id":"atomic-layer-etching/simulation-usecase/33/54aef25b16ec4f51b16e9d84a9a930c89371e345050a8d628002da041a377e5d","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/54aef25b16ec4f51b16e9d84a9a930c89371e345050a8d628002da041a377e5d.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/54aef25b16ec4f51b16e9d84a9a930c89371e345050a8d628002da041a377e5d.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"not_found"},"width":275,"height":222,"image_format":"jpeg","image_sha256":"981a8017008e530c28b052623f068b3e2ad13dbadd19db601ad3485e378e236b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":275,"height":222}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot displays the variation in the nitrogen-to-silicon atomic ratio (N_N/N_Si) as a function of HF dose, expressed in HF/nm². Initially, the ratio begins around 1.3, then decreases to a minimum near 1.05 at approximately 80–100 HF/nm², before gradually increasing again toward the initial value. A fitted curve highlights this non-linear trend, suggesting that HF exposure initially disrupts nitrogen content before stabilizing or reversing the effect at higher doses. A horizontal dashed line serves as a reference level, possibly corresponding to the stoichiometric or ideal N_N/N_Si ratio prior to treatment.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Dose (HF/nm²) | N_N/N_Si |\\n|---------------|----------|\\n| 0 | 1.3 |\\n| 20 | 1.2 |\\n| 40 | 1.15 |\\n| 60 | 1.10 |\\n| 80 | 1.05 |\\n| 100 | 1.07 |\\n| 120 | 1.12 |\\n| 140 | 1.18 |\\n| 160 | 1.22 |\\n| 180 | 1.26 |\\n| 200 | 1.3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the HF dose increases from 0 to around 100 HF/nm², the N_N/N_Si ratio decreases, reaching a minimum, indicating a loss or displacement of nitrogen relative to silicon. Beyond this point, further HF exposure leads to a recovery in the N_N/N_Si ratio, suggesting re-equilibration or re-incorporation of nitrogen species. The resulting U-shaped trend suggests dose-dependent etching or modification behaviour.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 80–100 HF/nm².\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Initial HF doses may deplete nitrogen content, a threshold dose exists where nitrogen loss peaks, higher doses may help restore or stabilise nitrogen levels\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_8a80cb301b636349b065c782a8596739ca56704250fa04b4481f225791f3f0a3.jpg","caption":"(b)","id":"train/atomic-layer-etching/simulation-usecase/33/8a80cb301b636349b065c782a8596739ca56704250fa04b4481f225791f3f0a3","sample_id":"atomic-layer-etching/simulation-usecase/33/8a80cb301b636349b065c782a8596739ca56704250fa04b4481f225791f3f0a3","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/8a80cb301b636349b065c782a8596739ca56704250fa04b4481f225791f3f0a3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/8a80cb301b636349b065c782a8596739ca56704250fa04b4481f225791f3f0a3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":309,"height":244,"image_format":"jpeg","image_sha256":"6e30bd4f4ee4c3cce541f0d5d2c6cd9498872b26a42c879d6a6c810febe16af7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":309,"height":244}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot displays the etching yield of silicon nitride (Si₃N₄) as a function of the electronic input energy (Eₙ) during HF-based processing. As the input energy increases from 0 to 50 eV, the etching yield steadily rises in a nonlinear fashion. The data points are fit with a dashed curve, showing an accelerating increase, suggesting that higher Eₙ values significantly enhance the reaction efficiency. The inclusion of error bars indicates variability in the measurements, particularly at higher energies.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| $E_{\\\\mathrm{in}}$ (eV) | Etching yield ($\\\\mathrm{Si}_3\\\\mathrm{N}_4$/HF) |\\n|---|---|\\n| 0.00 | 0.00 |\\n| 10.00 | 0.01 |\\n| 20.00 | 0.04 |\\n| 30.00 | 0.06 |\\n| 40.00 | 0.07 |\\n| 50.00 | 0.08 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the input energy increases from 0 to 50 eV, the etching yield of Si₃N₄ increases in a nonlinear manner. At low energies, the increase in yield is modest, but the trend becomes steeper at higher energies, indicating enhanced reaction kinetics or more efficient bond breaking with increasing Eₙ. This suggests that a threshold energy is required to initiate etching effectively, and further increases in Eₙ significantly boost the reaction rate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 40 eV.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Higher Eₙ values result in greater etching yields, threshold below which etching is inefficient, Nonlinear increases suggest diminishing returns at very high energies.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_figure_4.jpg","caption":"Figure 4. Comparison of reaction energies during etching MD calculated using DFT $(E_{\\mathrm{rxn}}^{\\mathrm{DFT}})$ and NNP $(E_{\\mathrm{rxn}}^{\\mathrm{NNP}})$ . Each point refers to individual reactions. The density of data points on the color bar indicates the local density of reaction events in the vicinity of each point, accounting for the superposition of many data points.","id":"train/atomic-layer-etching/simulation-usecase/33/figure_4","sample_id":"atomic-layer-etching/simulation-usecase/33/figure_4","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":569,"height":439,"image_format":"jpeg","image_sha256":"3d803554aca5d724f4ea612dcd65278f854e5268636ec86a06d4d71956bae100","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":569,"height":439}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a parity plot comparing reaction energies computed via Density Functional Theory (DFT) and a Neural Network Potential (NNP) model. Each point represents a single reaction’s predicted energy from both methods, with the color intensity indicating the density of data points at that value. The data clusters tightly along the diagonal parity line (dashed), suggesting strong agreement between DFT and NNP predictions across a broad energy range (from -5 eV to 10 eV). This indicates that the NNP model is well-trained and capable of accurately reproducing DFT-level energetics for the evaluated reactions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| $E_{\\\\mathrm{rxn}}^{\\\\mathrm{DFT}}$ (eV) | $E_{\\\\mathrm{rxn}}^{\\\\mathrm{NNP}}$ (eV) |\\n|---------------------------------------|----------------------------------------|\\n| -5 | -5 |\\n| -3 | -2.9 |\\n| 0 | 0.1 |\\n| 2 | 2.1 |\\n| 5 | 5.2 |\\n| 8 | 8.3 |\\n| 10 | 10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plot indicates a strong linear correlation between the reaction energies predicted by the neural network potential (NNP) and those calculated via density functional theory (DFT). Most points cluster along the diagonal, which represents perfect agreement. This suggests that the NNP model closely replicates DFT-calculated values across a wide range of reaction energies, validating its reliability as a surrogate model for high-throughput or large-scale simulations.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 0 eV.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It can replace DFT in large-scale simulations with high accuracy, It provides significant computational speed-up while preserving fidelity.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_35_FIG4.jpg","caption":"Figure 4. Scatter plot showing the adsorption energy versus oxygen coverage of the minima shown in Figure 3. All of the points were fit to a parabola for eye-guiding purposes. The highlighted points are cross-referenced to the configurations shown in Figure 3. Brown, white, and red spheres represent carbon, hydrogen, and oxygen atoms, respectively.","id":"train/atomic-layer-etching/simulation-usecase/35/FIG4","sample_id":"atomic-layer-etching/simulation-usecase/35/FIG4","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/Density Functional Theory Study of Oxygen Adsorption on Polymer Surfaces for Atomic-Layer.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":406,"image_format":"jpeg","image_sha256":"f20d59391b19adae8f9ce813ef08ac731dfbccaee2e7fb2da02fef6d9a360754","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":668,"height":402}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows adsorption energy as oxygen coverage increases. At low coverage, adsorption is strongly favorable. Stable species such as H₂O are formed. At higher coverage, adsorption becomes less stable. New bonds form and the polymer structure begins to break.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Coverage [O/nm²] | Adsorption Energy [eV/nm²] | Annotated chemical event |\\n|------------------|----------------------------|--------------------------|\\n| 0.5 | −2.02 (global minimum) | Initial adsorption |\\n| 3.0 | −1.00 (local minimum) | H₂O formation (O₅) |\\n| 6.8 | +0.10 (local maximum) | O₂H compound formed (O₁₁) |\\n| 8.0 | +0.09 | C–O–OH unstable state (O₁₃) |\\n| 9.0 | −0.21 | Benzene ring rupture (O₁₄–O₁₅) |\\n| 9.5 | −0.20 | C–O–C bridge bond formed (O₁₆) |\\n| 12.5 | −0.20 | O₃ formation (O₁₉) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At low oxygen coverage, reactions favor stable adsorption and low-energy products such as water. As coverage increases, the surface begins to form OH and peroxide-like species. At even higher coverage, the chemistry becomes destructive, leading to bond bridging, ozone formation, and ring rupture. This shows a transition from surface functionalization to surface damage.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Adsorption is more energetically favorable at low oxygen coverage.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The appearance of C–O–C bridges and benzene ring rupture indicates that the polymer backbone is being altered. These reactions go beyond surface functionalization and involve structural damage. This suggests reduced mechanical and chemical stability at high oxygen loading.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In surface treatment processes, controlled functionalization is often desired without damaging the material. This figure shows that excessive oxygen leads to polymer degradation. Identifying the onset of ring rupture helps define safe processing limits. This is critical for plasma and oxidative treatments of polymers.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_15.jpg","caption":"FIG. 15. Normalized atomic Cl counts as a function of $\\mathsf{Ar}^+$ fluence. Subfigure (a) shows the results for OES experiments (where the ion energy is estimated to be about $85\\mathrm{eV}$ ) and subfigure (b) shows results from MD ALE simulations where the ion energy is $80\\mathrm{eV}$ . In both cases, the results are normalized using the value observed at the peak.","id":"train/atomic-layer-etching/simulation-usecase/6/fig_15","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_15","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"box plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":1411,"height":489,"image_format":"jpeg","image_sha256":"1fac63a969f142d7b775dfa54390c2dbba3660a16dfdb53394f215e7a46c5cbf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":11,"width":686,"height":478},{"panel_id":"b","x":720,"y":7,"width":690,"height":481}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The experimental scatter plot shows a sharp decrease in Cl count with increasing ion dosage up to about 10–15 × 10¹⁵ Ar⁺/cm². After that, the count levels off around 0.5 arb. units, suggesting that most Cl atoms have been desorbed or sputtered and that the system has reached a steady state.\"},{\"panel_id\":\"b\",\"text\":\"The MD simulation results mirror this trend but show a steeper and more sustained decline. Initial Cl counts are slightly higher in simulation, but decrease more rapidly, falling below 0.2 arb. units by 50 × 10¹⁵ Ar⁺/cm². The more aggressive decline in simulations may reflect idealized surface models with fewer defect traps or re-adsorption pathways\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion Dosage (Ar⁺/cm²) × 10¹⁵ | Cl Count (arb. units) |\\n|-----------------------------|------------------------|\\n| 0 | 1.20 |\\n| 2 | 1.00 |\\n| 4 | 0.90 |\\n| 6 | 0.80 |\\n| 8 | 0.70 |\\n| 10 | 0.65 |\\n| 12 | 0.60 |\\n| 14 | 0.58 |\\n| 16 | 0.55 |\\n| 18 | 0.53 |\\n| 20 | 0.52 |\\n| 25 | 0.51 |\\n| 30 | 0.50 |\\n| 35 | 0.50 |\\n| 40 | 0.50 |\\n| 45 | 0.50 |\\n| 50 | 0.50 |\"},{\"panel_id\":\"b\",\"text\":\"| Ion Dosage (Ar⁺/cm²) × 10¹⁵ | Cl Count (arb. units) |\\n|-----------------------------|------------------------|\\n| 0 | 1.60 |\\n| 2 | 1.20 |\\n| 4 | 1.00 |\\n| 6 | 0.80 |\\n| 8 | 0.65 |\\n| 10 | 0.55 |\\n| 12 | 0.48 |\\n| 14 | 0.42 |\\n| 16 | 0.38 |\\n| 18 | 0.34 |\\n| 20 | 0.30 |\\n| 25 | 0.27 |\\n| 30 | 0.24 |\\n| 35 | 0.22 |\\n| 40 | 0.20 |\\n| 45 | 0.19 |\\n| 50 | 0.18 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Cl desorption, Surface sputtering, Bond breakage, Cl depletion over time\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In both the experimental and simulation results, Cl count decreases as ion dosage increases. The experimental data shows a rapid initial drop followed by a plateau near 0.5 arb. units, indicating surface saturation or depletion. In contrast, simulations exhibit a sharper and more sustained decline, reaching much lower final values. This suggests that Cl is more easily removed in the idealized simulation environment, while experimental surfaces may retain Cl due to surface defects or incomplete reactions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 15 × 10¹⁵ Ar⁺/cm²\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_8_fig_6.jpg","caption":"FIG. 6. Synergy plot for GaN using $\\mathrm{SF}_6$ plasma and TMA at $300^{\\circ}\\mathrm{C}$ . The first 25 pulses only involve dosing $\\mathrm{SF}_6$ plasma, the next 25 pulses only TMA, and the last 75 cycles are full ALE cycles with both $\\mathrm{SF}_6$ plasma and TMA dosed. The inset shows the transition between only $\\mathrm{SF}_6$ pulses and only TMA pulses.","id":"train/atomic-layer-etching/simulation-usecase/8/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/8/fig_6","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/Isotropic atomic layer etching of GaN using SF6 plasma and AI(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":675,"height":511,"image_format":"jpeg","image_sha256":"70cbbc1d040332c998b1f83d703cf4869dcce8e0f3b3e92ee8e499447d0d13be","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":669,"height":510}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the relationship between film thickness and pulses/cycles, showing a decreasing trend if both reactants are dosed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulses/Cycles | Film thickness (nm) |\\n|---|---|\\n| 0 | 43 |\\n| 25 | 43 |\\n| 50 | 42 |\\n| 75 | 33 |\\n| 100 | 25 |\\n| 125 | 18 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 25 pulses/cycles the SF6 plasma dosing is switched with TMA dosing, here a drop of 0.33 nm is observed. So based on this part of the graph the EPC is 0.33 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that there are temperature differences as an higher temperature can main a higher EPC.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that the flurination step increases the thickness slightly with the incorporation of fluorine.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It requires roughly 30 cycles.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_8_fig_9.jpg","caption":"FIG. 9. RMS roughness as a function of etched thickness, plotted alongside the fitted change in RMS roughness as obtained using the curvature-dependent model from Ref. 85.","id":"train/atomic-layer-etching/simulation-usecase/8/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/8/fig_9","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/Isotropic atomic layer etching of GaN using SF6 plasma and AI(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":669,"height":536,"image_format":"jpeg","image_sha256":"94b5c28753734707a4c68352c23fa9037d890ef43a18001e349c054bcb95ca03","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":6,"width":666,"height":527}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between etched thickness and RMS roughness, with experimental data points and a curvature-dependent model curve.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Etched thickness (nm) | RMS roughness (nm) |\\n|---|---|\\n| 0 | 2.65 |\\n| 5 | 2.4 |\\n| 10 | 2.2 |\\n| 15 | 2.0 |\\n| 20 | 2.0 |\\n| 25 | 1.9 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that there is dust incorporated in the film or the deposition method with which the GaN is made is not uniform.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This is not likely, even for infinite etch thickness, a material can never be perfectly flat.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At least 20 nm must be etched away.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_9_fig_3.jpg","caption":"Fig. 3. (a) Potential energy curve for $\\mathrm{SiCl_2}$ on the optimized Si(111) surface, here blue dots are the calculated data, and red line is the fitting function. $Z = 0$ represents the equilibrium position, and insets are the local views of the desorbed species. (b) Potential energy curve for the Si-adatom (atom A1 in Fig. 2(a)) in the absence of chlorine, insets are the local views of the desorbed species.","id":"train/atomic-layer-etching/simulation-usecase/9/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/9/fig_3","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/Mechanism of photoassisted atomic layer etching of chlorinated Si(111) surfaces Insight.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":680,"height":913,"image_format":"jpeg","image_sha256":"29fb684a0eb321552219fc1a347296adae14aad9ae5e8b26340f99d54007c769","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":39,"width":672,"height":397},{"panel_id":"b","x":11,"y":525,"width":669,"height":388}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a potential energy curve as a function of surface coordinate Z, with calculated data points and a fitted line for the desorption of a SiCl2 unit.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows a potential energy curve as a function of surface coordinate Z, with calculated data points and a fitted line for the desorption of a rest silicon atom.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Surface coordinate Z (Å) | Potential energy (eV) |\\n|---|---|\\n|-1 | 8 |\\n|-0.5 | 1.2 |\\n|0 | 0 |\\n|0.5 | 0.8 |\\n|1 | 1.5 |\\n|1.5 | 2.2 |\\n|2 | 2.4 |\\n|2.5| 2.5|\"},{\"panel_id\":\"b\",\"text\":\"| Surface coordinate Z (Å) | Potential energy (eV) |\\n|---|---|\\n|-1 | 8 |\\n|-0.5 | 1 |\\n|0 | 0 |\\n|0.5 | 0.5 |\\n|1 | 2 |\\n|1.5 | 3.2 |\\n|2 | 4.3 |\\n|2.5|5.2|\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In principle can silicon be etched continuously, however an energy of 6.1832 eV is required per silicon atom to do this.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"6.1832 eV\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SiCl2 unit has zero potential energy when it is in a standing up position on the surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The desorption energy is 2.5159 eV which is provided by energetic ions from the argon plasma.\"}]}]"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_12_fig_8.jpg","caption":"Fig. 8. Tungsten film thickness deposited after three AB cycles versus number of $\\mathrm{WF}_6$ pulses at $425 \\mathrm{K}$ . The $\\mathrm{Si}_2\\mathrm{H}_6$ exposure of $40 \\mathrm{Si}_2\\mathrm{H}_6$ pulses during each AB cycle was sufficient for a complete $\\mathrm{Si}_2\\mathrm{H}_6$ half-reaction.","id":"train/atomic-layer-deposition/experimental-usecase/12/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/12/fig_8","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line plot shows the tungsten film thickness obtained after three AB cycles as a function of the number of WF₆ pulses at 425 K. The thickness reaches saturation after about 10 WF₆ pulses, indicating that additional pulses do not increase growth. The data also confirms that using 40 Si₂H₆ pulses in each AB cycle is sufficient to complete the Si₂H₆ half-reaction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of WF6 Pulses | Tungsten Film Thickness (Å) |\\n|---|---|\\n| 0 | 0 |\\n| 1 | 3 |\\n| 5 | 7 |\\n| 10 | 7.2 |\\n| 15 | 7.2 |\\n| 20 | 7.2 |\\n| 25 | 6.5 |\\n| 30 | 7.2 |\\n| 40 | 7.2 |\\n| 50 | 7.2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To account for minor process variations, a safe setpoint would be slightly above the threshold, such as 12–15 pulses. Programming anything less than 10 pulses risks incomplete surface coverage, while significantly more (e.g., >20) wastes precursor without adding thickness.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"5 Pulses (Slope Region): High precursor efficiency (low waste), but high risk of non-uniformity because growth is sensitive to local gas flux.\\n\\n50 Pulses (Deep Saturation): Confirms maximum uniformity and full coverage, but suffers from very low efficiency due to high precursor usage/waste.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plateau signifies that all available reactive surface sites (specifically the Si-H bonds established in the previous step) have been consumed and replaced by W-F species. Since WF6 cannot react with itself or the fluorinated surface it creates, the reaction chemically terminates. This site-limitation factor ensures the film thickness is defined strictly by the number of cycles, not the total precursor gas exposure.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The GPC is ~2.5 Å/cycle, so 8 cycles are required for a 20 Å liner.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":598,"height":608}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/J.W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":600,"height":609,"image_format":"jpeg","image_sha256":"4416339a5a164def601a15143b0bd86e76c005bf72af69681c9c27e054aec64b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_12_fig_9.jpg","caption":"Fig. 9. Tungsten film thickness deposited after three AB cycles versus number of $\\mathrm{Si}_2\\mathrm{H}_6$ pulses at $425 \\mathrm{K}$ . The $\\mathrm{WF}_6$ exposure of nine $\\mathrm{WF}_6$ pulses during each AB cycle was sufficient for a complete $\\mathrm{WF}_6$ half-reaction.","id":"train/atomic-layer-deposition/experimental-usecase/12/fig_9","sample_id":"atomic-layer-deposition/experimental-usecase/12/fig_9","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This line chart represents the tungsten(W) film thickness after 3 ALD- AB cycles as a function of the number of Si₂H₆ pulses per cycle (B-step), while the WF₆ exposure (A-step) is held constant at 9 pulses per cycle. It demonstrates that film growth requires a minimum number of Si₂H₆ pulses to complete the reaction cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Si₂H₆ Pulses | Tungsten Film Thickness (Å) |\\n|---|---|\\n| 0 | 0 |\\n| 4 | 5 |\\n| 12 | 7.5 |\\n| 24 | 8.1 |\\n| 48 | 7.4 |\\n| 60 | 8.1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"WF₆ Pulse\\n\\nPurge\\n\\nRepeat steps 1-2 until 9 total WF₆ pulses are delivered.\\n\\nSi₂H₆ Pulse\\n\\nPurge\\n\\nRepeat steps 4-5 a total of 30 times.\\nThe 9 WF₆ pulses ensure the surface is saturated, guaranteeing a complete and reproducible A-step half-reaction regardless of the subsequent B-step condition, isolating the effect of the Si₂H₆ dose.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Diborane (B₂H₆) is likely better for minimizing oxygen. B₂H₆ is a stronger reducing agent that can getter trace oxygen and water more effectively than Si₂H₆. The trade-off is that boron itself can incorporate as an impurity in the W film, potentially altering its electrical resistivity and stability, whereas silicon incorporation from Si₂H₆ may form a more benign tungsten silicide.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Thickness increases with Si₂H₆ pulses, then saturates. From 0 to ~10 pulses, thickness rises sharply because each pulse provides more reductant to convert the W–F surface layer into a metallic W film and regenerate the Si–H sites needed for the next WF₆ pulse. Insufficient Si₂H₆ leaves the surface partially fluorinated, preventing full tungsten deposition in the next cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the process must use a saturating Si₂H₆ dose (>20 pulses/cycle) to ensure complete surface reaction. To grow 100 Å, you would run the calculated number of full ALD cycles based on the saturated growth per cycle (~20 Å/3 cycles = ~6.7 Å/cycle). Consistency and conformality are achieved only when both half-reactions (9 WF₆ pulses, >20 Si₂H₆ pulses) are operated in their saturated regimes.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":599,"height":598}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/J.W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":600,"height":603,"image_format":"jpeg","image_sha256":"8cbaa089799ee74d9375dffd2f4cc61dfa62031c8a346286999a72282fce7752","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_16_fig_5.jpg","caption":"FIG. 5. Film growth rates as a function of $\\mathrm{Zr}$ precursor pulse length with ozone as the oxygen source. The pulsing sequence was $\\mathrm{x}$ $\\mathrm{slx} + 0.5$ sl1.0 sl1.5 s for $\\mathrm{Zr}$ pulselpurgel $\\mathrm{O_3}$ pulselpurge.","id":"train/atomic-layer-deposition/experimental-usecase/16/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/16/fig_5","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the growth rate of a material, when ozone is used as a precursor, as a function of Zr pulse length at different temperatures: Zr(Me₅Cp)(TEA) at 375°C and 300°C, Zr(Cp)(ᵗBuDAD)(OⁱPr) and Zr(MeCp)(TMEA) at 250°C. The growth rate for Zr(MeCp)(TMEA) continues to increase, others show self-limiting behaviour.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Zr pulse length (s) | Growth rate (Å/cycle) | Reagent | Temperature (°C) |\\n|---|---|---|---|\\n| 0,5 | 0,28 | Zr(Me_5Cp)(TEA) | 300 |\\n| 1,0 | 0,30 | Zr(Me_5Cp)(TEA) | 300 |\\n| 1,5 | 0,30 | Zr(Me_5Cp)(TEA) | 300 |\\n| 2,0 | 0,31 | Zr(Me_5Cp)(TEA) | 300 |\\n| 2,5 | 0,32 | Zr(Me_5Cp)(TEA) | 300 |\\n| 3,0 | 0,32 | Zr(Me_5Cp)(TEA) | 300 |\\n| 0,5 | 0,34 | Zr(Me_5Cp)(TEA) | 375 |\\n| 1,0 | 0,37 | Zr(Me_5Cp)(TEA) | 375 |\\n| 1,5 | 0,39 | Zr(Me_5Cp)(TEA) | 375 |\\n| 2,0 | 0,41 | Zr(Me_5Cp)(TEA) | 375 |\\n| 2,5 | 0,42 | Zr(Me_5Cp)(TEA) | 375 |\\n| 3,0 | 0,43 | Zr(Me_5Cp)(TEA) | 375 |\\n| 3,5 | 0,43 | Zr(Me_5Cp)(TEA) | 375 |\\n| 1,0 | 0,40 | Zr(Cp)(tBuDAD)(O^iPr) | 250 |\\n| 1,5 | 0,43 | Zr(Cp)(tBuDAD)(O^iPr) | 250 |\\n| 2,0 | 0,50 | Zr(Cp)(tBuDAD)(O^iPr) | 250 |\\n| 2,5 | 0,49 | Zr(Cp)(tBuDAD)(O^iPr) | 250 |\\n| 3,0 | 0,48 | Zr(Cp)(tBuDAD)(O^iPr) | 250 |\\n| 1,0 | 0,57 | Zr(MeCp)(TMEA) | 250 |\\n| 2,0 | 0,66 | Zr(MeCp)(TMEA) | 250 |\\n| 2,5 | 0,69 | Zr(MeCp)(TMEA) | 250 |\\n| 3,0 | 0,71 | Zr(MeCp)(TMEA) | 250 |\\n| 3,5 | 0,74 | Zr(MeCp)(TMEA) | 250 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No. The growth rate continues to rise as more precursor is dosed, the deposition is therefore likely influenced by CVD-like reactions or precursor decomposition. A self-limiting ALD growth would show a plateau.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The growth rate decreases by ~ 0.1 Å/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Zr(Cp)(ᵗBuDAD)(OⁱPr) and Zr(Me₅Cp)(TEA).\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":656,"height":553}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/Sanni Seppala et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":656,"height":555,"image_format":"jpeg","image_sha256":"5a29599c0702375ef9f357115da168d1219308d92e6aba95e424c3eef004fadf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_2_figure_1.jpg","caption":"Figure 1. Dependence of the platinum film growth rate on the $\\mathrm{MeCpPtMe}_3$ and air pulse times. The air pulse time in the $\\mathrm{MeCpPtMe}_3$ experiments was $1.5\\mathrm{s}$ and the $\\mathrm{MeCpPtMe}_3$ pulse time in the air pulse experiments was $0.5\\mathrm{s}$ .","id":"train/atomic-layer-deposition/experimental-usecase/2/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/2/figure_1","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot compares the ALD growth rate of Pt as a function of pulse duration for two independent series: varying MeCpPtMe₃ pulse time at fixed air exposure and varying air pulse time at fixed MeCpPtMe₃ exposure. The MeCpPtMe₃-pulse series shows a modest increase from ~0.44 to ~0.50 Å/cycle with longer precursor pulses, while the air-pulse series shows growth rates in the ~0.36–0.46 Å/cycle range, largely insensitive to air pulse duration beyond ~1.5 s. Error bars highlight the experimental variation for each condition.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulse time (s) | MeCpPtMe₃ pulse series (Å cycle⁻¹) | Air pulse series (Å cycle⁻¹) |\\n|----------------|-----------------------------------|-------------------------------|\\n| 0.0 | ~0.44 | - | \\n| 0.5 | ~0.45 | - |\\n| 1.0 | ~0.50 | ~0.36 |\\n| 1.5 | ~0.49 | ~0.45 |\\n| 2.0 | - | ~0.45 |\\n| 2.5 | - | ~0.42 |\\n| 3.0 | - | ~0.46 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing the MeCpPtMe₃ pulse duration increases the likelihood that all available surface reactive sites are exposed to the Pt precursor before purging. This reduces precursor starvation and moves the system toward surface saturation, which is reflected by the gradual increase in growth rate from ~0.44 to ~0.50 Å/cycle. Once saturation is approached, further increases in pulse time yield diminishing returns, consistent with self-limiting ALD behavior.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The MeCpPtMe₃ pulse-time series shows a stronger dependence, implying that precursor adsorption is more rate-limiting than the air oxidation step under these conditions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The relatively small and overlapping error bars indicate that the observed changes in growth rate are systematic rather than dominated by experimental noise. This strengthens confidence that the plateaus correspond to true saturation behavior rather than statistical scatter, particularly for the air-pulse series where growth rates remain nearly constant over a wide pulse-time range.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"By identifying the minimum pulse durations required to achieve saturation—about 1.0 s for MeCpPtMe₃ and 1.5 s for air—process engineers can avoid unnecessarily long pulses that increase cycle time without increasing growth per cycle. Operating at these saturation thresholds maximizes throughput while maintaining precise thickness control and film uniformity.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":4,"width":560,"height":424}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":561,"height":428,"image_format":"jpeg","image_sha256":"0828deda4229832f1d1f0bbab33983d4d38bdb5f5318eb3261a0bc2bd36e568f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_2_figure_3.jpg","caption":"Figure 3. Thickness profiles of platinum films grown with short and long $\\mathrm{MeCpPtMe_3}$ pulses of 0.2 and $1.5\\mathrm{s}$ , respectively. The profile is measured along the gas flow direction at various distances from the leading edge of the substrate, that is, the edge closest to the precursor inlet.","id":"train/atomic-layer-deposition/experimental-usecase/2/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/2/figure_3","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"b\",\"text\":\"Figure shows film thickness profiles for platinum ALD using short (0.2 s) and long (1.5 s) MeCpPtMe₃ precursor pulses as a function of substrate position along the gas-flow direction. Long precursor pulses yield consistently thicker films, reflecting greater precursor availability across the surface. Both profiles show a mild decrease in thickness with distance from the leading edge, indicating precursor depletion during transport. The small error bars suggest good reproducibility for both pulse conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Distance from leading edge (cm) | Long-pulse thickness (nm) | Short-pulse thickness (nm) |\\n|---------------------------------|---------------------------|----------------------------|\\n| 1 | ~78 ± 5 | ~66 ± 5 |\\n| 2 | ~76 ± 5 | ~64 ± 5 |\\n| 3 | ~72 ± 5 | ~63 ± 5 |\\n| 4 | ~68 ± 5 | ~60 ± 5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Longer MeCpPtMe₃ pulses increase the total precursor dose delivered to the substrate, allowing surface saturation to be reached over a larger downstream distance before precursor depletion occurs. This leads to higher and more uniform film thickness along the gas-flow direction. Shorter pulses provide insufficient precursor flux, causing earlier depletion and reduced surface coverage downstream, which manifests as thinner films and a stronger spatial gradient.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The short-pulse condition shows a stronger thickness decay.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The consistently greater thickness implies more complete surface saturation during each ALD cycle when long pulses are used. This suggests that the process is less transport-limited and that adsorption kinetics dominate over precursor delivery limitations, resulting in a higher effective growth per cycle across the substrate.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure demonstrates that longer precursor pulses improve thickness uniformity by overcoming transport limitations. For large-area wafers or high-aspect-ratio features, pulse durations must be sufficiently long to ensure uniform precursor delivery throughout the structure. These insights guide pulse-time optimization to balance throughput against uniformity requirements in industrial ALD reactors.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":535,"height":371}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/2/Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"2","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":539,"height":375,"image_format":"jpeg","image_sha256":"a844597aa9312b4ebc9d80f5e9d8fd9fce5f4051797867321208966707912d8f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_6.jpg","caption":"Figure 6. Thickness of ALD ITO films versus number of cycles determined using VASE for films deposited on Si(100) at $275^{\\circ}C$ using $5\\%$ $\\mathrm{SnO_2}$ cycles.","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_6","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart displays a direct linear relationship between the number of ALD cycles and ITO film thickness, demonstrating consistent film growth per cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD Cycles | ITO Thickness (Å) |\\n|------------|-------------------|\\n| 0 | 0 |\\n| 100 | 200 |\\n| 200 | 400 |\\n| 300 | 600 |\\n| 400 | 800 |\\n| 500 | 1000 |\\n| 600 | 1200 |\\n| 700 | 1400 |\\n| 800 | 1600 |\\n| 900 | 1800 |\\n| 1000 | 2000 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ITO thickness increases linearly with the number of ALD cycles, indicating a consistent growth rate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Number of ALD cycles, ITO Thickness.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":586,"height":570}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":586,"height":570,"image_format":"jpeg","image_sha256":"191f29ab6a4829e33b0ffaeca0d31ba945ff7dbf89798569da4f3e6dc5e424dd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_8.jpg","caption":"Figure 8. Resistivity of ALD ITO films prepared on glass using $5\\%$ $\\mathrm{SnO_2}$ cycles measured by four-point probe versus (a) number of cycles at $275^{\\circ}C$ and (b) deposition temperature using 300 cycles.","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_8","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows a sharp initial decrease in resistivity with increasing ALD cycles and ITO film thickness, plateauing at around 0.002 Ω·cm beyond 500 Å.\"},{\"panel_id\":\"b\",\"text\":\"The scatter plot shows a gradual decrease in resistivity with increasing deposition temperature, reaching a minimum at 350 °C\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD Cycles | ITO Thickness (Å) | Resistivity (Ohm·cm) |\\n|------------|-------------------|-----------------------|\\n| 0 | 0 | 0.015 |\\n| 100 | 100 | 0.002 |\\n| 200 | 200 | 0.002 |\\n| 300 | 300 | 0.002 |\\n| 400 | 400 | 0.002 |\\n| 500 | 500 | 0.002 |\\n| 600 | 600 | 0.002 |\\n| 700 | 700 | 0.002 |\\n| 800 | 800 | 0.002 |\\n| 900 | 900 | 0.002 |\\n| 1000 | 1000 | 0.002 |\"},{\"panel_id\":\"b\",\"text\":\"| Deposition Temperature (°C) | Resistivity (Ohm·cm) |\\n|-----------------------------|----------------------|\\n| 150 | 0.01 |\\n| 200 | 0.005 |\\n| 250 | 0.003 |\\n| 300 | 0.002 |\\n| 350 | 0.001 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"350 °C\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Resistivity decreases rapidly during early cycles and plateaus at ~0.002 Ω·cm after 500 Å film thickness.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"ALD cycle number, ITO thickness, Depostion temperature\"}]}]","bbox":[{"panel_id":"a","x":7,"y":0,"width":595,"height":623},{"panel_id":"b","x":657,"y":62,"width":579,"height":551}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":1236,"height":625,"image_format":"jpeg","image_sha256":"85f4410281ead97e0c1e123ec7c69812887a9efb75af3b7523963e9b31baa1ed","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_26_figure_9.jpg","caption":"Figure 9. Optical transmittance for ALD ITO films prepared on glass using 300 ALD cycles with $5\\%$ $\\mathrm{SnO_2}$ cycles versus deposition temperature. Optical transmittance is given as the average transmission over the wavelength range $370 - 1000\\mathrm{nm}$ .","id":"train/atomic-layer-deposition/experimental-usecase/26/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/26/figure_9","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows that optical transmission increases with a higher percentage of Sn cycles, rising steeply at first before plateauing around 92%\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| % of Sn Cycles | Optical Transmission (%) |\\n|----------------|--------------------------|\\n| 0 | 80 |\\n| 1 | 82 |\\n| 3 | 87 |\\n| 5 | 88 |\\n| 10 | 92 |\\n| 15 | 92 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the percentage of Sn cycles increases, the optical transmission initially rises sharply. This rapid improvement occurs up to approximately 5–10% Sn cycles, indicating a significant enhancement in transparency with minimal Sn incorporation. Beyond this point, the curve begins to plateau, and further increases in Sn content do not yield substantial gains. The optical transmission stabilizes near 92%, suggesting a saturation point where additional Sn cycles have a negligible impact on optical performance. This trend implies that optimal transparency can be achieved with a relatively low Sn cycle percentage.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Optical transmission (%)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":583,"height":584}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/26/Jeffrey W. Elam et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"26","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":583,"height":584,"image_format":"jpeg","image_sha256":"502bf42639e14dc078bee8d3edc500ed6c5d708792184b4881d7201ff5e30145","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_12.jpg","caption":"Figure 12. Experimental and simulated $I - V$ curves of the OTS device. (a) $I - V$ characteristics by plotting $I_{\\mathrm{DUT}} - V_{\\mathrm{DUT}}$ . (b) $I - V$ characteristics for the $I_{\\mathrm{off}}$ region by voltage sweep. Both experiments were performed using devices fabricated via the ALD-DFM process.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_12","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_12","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a scatter plot of current versus voltage, indicating a non-linear relationship where current increases exponentially with voltage.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays a scatter plot comparing experimental and simulated currents against voltage, highlighting a exponential increase in current with voltage.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Voltage (V) | Current (A) |\\n|---|---|\\n|0.5| 10^-4 |\\n|0.7| 10^-3 |\\n|0.9| 10^-2 |\\n|1.1| 2*10^-2 |\\n|1.3| 2.5*10^-2 |\\n|1.5| 2.5*10^-2 |\\n|1.7| 10^-4 |\\n|1.9| 10^-4 |\"},{\"panel_id\":\"b\",\"text\":\"| Voltage (V) | Current (A) |\\n|---|---|\\n|0| 10^-8 |\\n|0.5| 4*10^-7 |\\n|1| 10^-6 |\\n|1.5| 4*10^-6 |\\n|2| 10^-5 |\\n|2.5| 10^-3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"slightly below 1 V\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There seem to be a lot of datapoints where just noise is measured resulting in a huge spread in datapoints.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes mostly for low voltages the different types of data overlap, however the switching current is less accurately simulated.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10^-3 ampere\"}]}]","bbox":[{"panel_id":"a","x":7,"y":38,"width":344,"height":304},{"panel_id":"b","x":350,"y":41,"width":321,"height":302}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":342,"image_format":"jpeg","image_sha256":"02ff121b5a035607e98b8138c1264cd8119cacc48148216f3577f68643586281","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_9.jpg","caption":"Figure 9. Resistivity-temperature experiments (top) and GAXRD patterns (bottom) of the as-deposited and annealed GeSe films grown through (a), (c) the conventional ALD process and (b), (d) the ALD-DFM process to verify the crystallization temperature.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_9","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"stacked spectra chart"},{"panel_id":"d","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The sheet resistance of ALD grown GeSe is plotted against temperature. There is a sharp decrease in resistance at around 337°C.\"},{\"panel_id\":\"b\",\"text\":\"The sheet resistance of DFM-ALD grown GeSe is plotted against temperature. There is a sharp decrease in resistance at around 348°C.\"},{\"panel_id\":\"c\",\"text\":\"X-ray diffraction patterns are shown for different temperatures, indicating changes in crystallinity for 340 and 350 degrees for ALD grown GeSe.\"},{\"panel_id\":\"d\",\"text\":\"X-ray diffraction patterns are shown for different temperatures, indicating changes in crystallinity for 350 degrees for ALD grown GeSe.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Sheet resistance (Ω/□) |\\n|---|---|\\n| 0 | 3*10^7 |\\n| 50 | 3*10^7 |\\n| 100 | 3*10^7 |\\n| 150 | 3*10^7 |\\n| 200 | 3*10^7 |\\n| 250 | 3*10^7 |\\n| 300 | 3*10^7 |\\n| 350 | 10^4 |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | Sheet resistance (Ω/□) |\\n|---|---|\\n| 0 | 3*10^7 |\\n| 50 | 3*10^7 |\\n| 100 | 3*10^7 |\\n| 150 | 3*10^7 |\\n| 200 | 3*10^7 |\\n| 250 | 3*10^7 |\\n| 300 | 3*10^7 |\\n| 350 | 10^4 |\"},{\"panel_id\":\"c\",\"text\":\"| 2θ (°) | Intensity (A.U.) |\\n|---|---|\\n| 20 | - |\\n| 25 | - |\\n| 30 | - |\\n| 32 | Peak for 340 and 350 degrees|\\n| 40 | - |\\n| 45 | - |\\n| 50 | - |\"},{\"panel_id\":\"d\",\"text\":\"| 2θ (°) | Intensity (A.U.) |\\n|---|---|\\n| 20 | - |\\n| 25 | - |\\n| 30 | - |\\n| 32 | Peak for 350 degrees|\\n| 40 | - |\\n| 45 | - |\\n| 50 | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The material is more conductive in crystalline state, at higher temperatures the material is more crystalline. Also for these high temperatures lower sheet resistances are measured.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There are two peaks\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"By putting a sample in a RTA or rapid thermal anneal tool.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"348 degrees Celcius\"}]}]","bbox":[{"panel_id":"a","x":29,"y":53,"width":312,"height":307},{"panel_id":"b","x":362,"y":53,"width":310,"height":307},{"panel_id":"c","x":53,"y":393,"width":289,"height":300},{"panel_id":"d","x":383,"y":403,"width":288,"height":290}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":694,"image_format":"jpeg","image_sha256":"9059f64bc498b64dc9b2bf7cfde370eb7acfd6d03e50bcd1443c240976e54068","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_29_figure_6.jpg","caption":"Figure 6. Ellipsometric measurements of the tungsten nitride film thickness deposited by three AB cycles vs. $\\mathrm{NH}_3$ exposure at $600~\\mathrm{K}$ . A $\\mathrm{WF}_6$ exposure of $4300~\\mathrm{L}$ was sufficient for a complete $\\mathrm{WF}_6$ half- reaction at $600~\\mathrm{K}$ .","id":"train/atomic-layer-deposition/experimental-usecase/29/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/29/figure_6","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The graph shows the relationship between NH₃ exposure and film thickness at 600 K with 3 AB cycles. The film thickness increases rapidly initially and then plateaus.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| NH₃ Exposure (L) | Film Thickness (Å) |\\n|---|---|\\n| 0 | 0 |\\n| 1000 | 1 |\\n| 2000 | 2 |\\n| 3000 | 3 |\\n| 4000 | 4 |\\n| 5000 | 6 |\\n| 6000 | 7 |\\n| 7000 | 8 |\\n| 8000 | 8 |\\n| 9000 | 8 |\\n| 10000 | 8 |\\n| 11000 | 8 |\\n| 12000 | 8 |\\n| 13000 | 8 |\\n| 14000 | 8 |\\n| 15000 | 8 |\\n| 16000 | 8 |\\n| 17000 | 8 |\\n| 18000 | 8 |\\n| 19000 | 8 |\\n| 20000 | 8 |\\n| 21000 | 8 |\\n| 22000 | 8 |\\n| 23000 | 8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After about 10,000 L.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"7 Å.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":1,"width":663,"height":643}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/J. W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":666,"height":647,"image_format":"jpeg","image_sha256":"fc4c5da4324f2b2514ab11de50dded83c92060fa1377bf652550e43fc3d06299","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_29_figure_7.jpg","caption":"Figure 7. Ellipsometric measurements of the tungsten nitride film thickness deposited by three AB cycles vs. $\\mathrm{WF}_6$ exposure at $600~\\mathrm{K}$ . A $\\mathrm{NH}_3$ exposure of $12,000~\\mathrm{L}$ was sufficient for a complete $\\mathrm{NH}_3$ half- reaction at $600~\\mathrm{K}$ .","id":"train/atomic-layer-deposition/experimental-usecase/29/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/29/figure_7","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between the exposure of WF₆ and film thickness at 3 AB cycles and a temperature of 600 K.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| WF₆ Exposure (L) | Film Thickness (Å) |\\n|---|---|\\n| 0 | 0 |\\n| 1000 | 1 |\\n| 2000 | 2 |\\n| 3000 | 3 |\\n| 6000 | 8 |\\n| 12000 | 8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"12,000 L.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 4 Å.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After about 3,000 L.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 8 Å.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":652,"height":646}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/J. W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":658,"height":650,"image_format":"jpeg","image_sha256":"effb04facf8a3c982346fb17ee8cfd7a7a514ab1b5d6dd444b3cf0c489c16fcd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_32_figure_1.jpg","caption":"Figure 1. Growth rates of thermal ALD $\\mathrm{Ta_2O_5}$ as a function of PDMAT exposure time $(t_{\\mathrm{s}})$ on $\\mathrm{Si(001)}$ substrate at $T_{\\mathrm{s}} = 250^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/32/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/32/figure_1","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows growth rate of thermal ALD Ta₂O₅ as a function of PDMAT exposure time at 250°C. The growth rate increases rapidly at short exposure times and saturates at approximately 0.85 Å/cycle for t_s ≥ 1 s, demonstrating self-limiting adsorption characteristic of ideal ALD behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| t_s (s) | Growth rate (Å/cycle) |\\n|---|---|\\n| 0 | 0 |\\n| 0.5 | 0.7 |\\n| 1 | 0.8 |\\n| 1.5 | 0.8 |\\n| 2 | 0.8 |\\n| 2.5 | 0.8 |\\n| 3 | 0.8 |\\n| 3.5 | 0.8 |\\n| 4 | 0.8 |\\n| 4.5 | 0.8 |\\n| 5 | 0.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The growth rate increases steeply at short PDMAT exposure times, rising from near zero to about 0.7 Å/cycle at 0.5 s. Beyond 1 s of exposure, the growth rate plateaus at approximately 0.85 Å/cycle. This saturation behavior demonstrates self-limiting adsorption of the PDMAT precursor, which is the defining characteristic of an ideal ALD process.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 1 second.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The 0.85 Å/cycle growth rate is almost twice that reported for ethoxide or chloride precursors (both ~0.45 Å/cycle).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Purge time (t_p = 3 s), water reactant exposure time (t_r = 3 s), substrate temperature (T_s = 250°C).\"}]}]","bbox":[{"panel_id":"a","x":3,"y":7,"width":677,"height":521}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/W. J. Maeng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":683,"height":528,"image_format":"jpeg","image_sha256":"5d4764f0f32aa9a45efed33704aa21a226f61a5846cccb39c936e51ba3491bae","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_32_figure_4.jpg","caption":"Figure 4. Growth rates of $\\mathrm{TiO_2}$ as a function of TDMAT exposure time on Si(001) substrate at $T_{\\mathrm{s}} = 200^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/32/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/32/figure_4","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows growth rate of thermal ALD TiO₂ as a function of TDMAT exposure time at 200°C. Unlike Ta₂O₅ from PDMAT, the growth rate does not saturate but continues to increase with exposure time, indicating incomplete self-limiting behavior. This non-ideal ALD characteristic is attributed to the low thermal decomposition temperature of TDMAT (~180°C).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| t_S (s) | Growth rate (Å/cycle) |\\n|---|---|\\n| 0 | 0 |\\n| 1 | 1.5 |\\n| 2 | 2 |\\n| 3 | 2.5 |\\n| 4 | 3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. Unlike Ta₂O₅ ALD from PDMAT, which shows clear saturation above 1 s exposure time, the TiO₂ growth rate from TDMAT continues to increase throughout the tested range up to 7 s. Although some slowdown occurs above 1 s, true saturation is never achieved. This indicates that TDMAT does not adsorb with perfect self-limitation at this temperature.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The low thermal decomposition temperature of TDMAT, reported to be approximately 180°C, which is below the growth temperature of 200°C used in this experiment.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At t_s = 2 s, the growth rate is approximately 2.1 Å/cycle. This is significantly higher than values reported for other precursors such as titanium methoxide (0.5 Å/cycle) and titanium chloride (0.75 Å/cycle). However, the higher rate partly reflects the non-ideal CVD contribution rather than pure ALD growth.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TDMAT precursor exposure time in seconds.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":2,"width":670,"height":944}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/32/W. J. Maeng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":661,"height":497,"image_format":"jpeg","image_sha256":"b820e3792ed88eb26c1d05640a79b0c38aa6249151fc408441a5a7ceafbd462c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_33_figure_5.jpg","caption":"Figure 5 Dependence of the saturated ALD cobalt (a) and copper (b) thicknesses per cycle, as a function of the substrate temperature.","id":"train/atomic-layer-deposition/experimental-usecase/33/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/33/figure_5","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure compares the dependence of ALD growth rate on substrate temperature for two different processes or materials. In subfigure (a), the growth rate increases steadily from approximately 0.01 Å/cycle at 260 °C to 0.12 Å/cycle at 340 °C, suggesting a thermally activated process with relatively linear behavior in this temperature range.\"},{\"panel_id\":\"b\",\"text\":\"In subfigure (b), the growth rate follows a sigmoidal trend, increasing more sharply between 200 °C and 280 °C, indicating a possible transition from a kinetically limited regime to a more saturated or efficient growth regime. Both plots highlight the strong influence of temperature on film growth dynamics, with potential implications for process window optimisation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Substrate temperature (°C) | Growth rate (Å per cycle) |\\n|----------------------------|----------------------------|\\n| 260 | 0.01 |\\n| 280 | 0.03 |\\n| 300 | 0.06 |\\n| 320 | 0.09 |\\n| 340 | 0.12 |\"},{\"panel_id\":\"b\",\"text\":\"| Substrate temperature (°C) | Growth rate (Å per cycle) |\\n|----------------------------|----------------------------|\\n| 160 | 0.0 |\\n| 200 | 0.1 |\\n| 220 | 0.2 |\\n| 240 | 0.35 |\\n| 280 | 0.5 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plots suggest that different ALD processes or chemistries have distinct thermal activation behaviors. In (a), the steady increase in growth rate with temperature implies a broad and controllable window, which is advantageous for uniform deposition. In contrast, the sigmoidal trend in (b) indicates that below a certain threshold (~200 °C), the process is kinetically limited, but rapidly becomes efficient above this temperature. This means that process engineers may need to operate within a narrower high-temperature window for maximum efficiency, potentially requiring more precise thermal control. Understanding these trends helps optimize reactor conditions for consistent film quality and throughput\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"320 °C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Higher temperatures enhance precursor reactivity, improve byproduct desorption\"}]}]","bbox":[{"panel_id":"a","x":12,"y":8,"width":681,"height":533},{"panel_id":"b","x":15,"y":569,"width":666,"height":491}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/33/BOOYONG S. LIM et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":694,"height":1070,"image_format":"jpeg","image_sha256":"790c35df622f8449764bda50eb4f2b4ac5eb78446840dbcbf024c508850997e6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_35_figure_2.jpg","caption":"Figure 2. Growth rate as a function of (a) $\\mathrm{SbCl}_3$ and (b) $(\\mathrm{Et}_3\\mathrm{Si})_2\\mathrm{Te}$ pulse length for $\\mathrm{Sb}_2\\mathrm{Te}_3$ films deposited at $60^{\\circ}\\mathrm{C}$ . The other precursor pulse lengths were kept at $1.0~\\mathrm{s}$ and all the purge lengths at $2.0~\\mathrm{s}$ .","id":"train/atomic-layer-deposition/experimental-usecase/35/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/35/figure_2","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The growth rate of a material increases with increasing SbCl₃ pulse length up to a certain point and then plateaus.\"},{\"panel_id\":\"b\",\"text\":\"The growth rate of a material increases gradually with increasing (Et₃Si)₂Te pulse length, but shows subsaturation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| SbCl₃ pulse length (s) | Growth rate (Å/cycle) |\\n|---|---|\\n| 0.0 | 0.0 |\\n|0.2|0.3|\\n| 0.5 | 0.6 |\\n| 1.0 | 0.6 |\\n| 2.0 | 0.6 |\"},{\"panel_id\":\"b\",\"text\":\"| (Et₃Si)₂Te pulse length (s) | Growth rate (Å/cycle) |\\n|---|---|\\n| 0.0 | 0.0 |\\n|0.2|0.0|\\n| 0.5 | 0.45 |\\n| 1.0 | 0.6 |\\n| 1.5 | 0.7 |\\n| 2.0 | 0.6 |\\n| 3.0 | 0.65 |\\n| 4.0 | 0.7 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.6 angstrom per cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No it does not, there seems to be a form of softsaturation, where there is still an increase in growth rate for ever increasing pulse length.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.6 angstrom per cycle\"}]}]","bbox":[{"panel_id":"a","x":0,"y":9,"width":304,"height":230},{"panel_id":"b","x":336,"y":9,"width":303,"height":230}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/Viljami Pore et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":639,"height":239,"image_format":"jpeg","image_sha256":"30626e05b6895f64741769959d5203206e736b46bae891424907821887ddfb29","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_42_figure_3.jpg","caption":"Figure 3. ALD saturation curve for 1 as the pulse length of 1 was varied.","id":"train/atomic-layer-deposition/experimental-usecase/42/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/42/figure_3","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot image represents the growth rate (in A/cycle) against pulse length (in seconds). There seems to be no growth till 2 secs and it seems to increase only after 3 secs and reaches a peak at 5 secs and slightly decreases. This saturation is the identity of a self-limiting ALD process, where increasing the exposure time beyond a certain point no longer increases thickness, confirming complete surface reaction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| pulse length (s) | growth rate (A/cycle) |\\n|---|---|\\n| 1 | 0 |\\n| 2 | 0 |\\n| 3 | 0.15 |\\n| 4 | 0.2 |\\n| 5 | 0.22 |\\n| 6 | 0.21 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Step 1: Pulse of Compound 1 (vapor) onto the hot substrate \\nStep 2: 3 s purge with N₂ \\nStep 3: 6 s pulse of H₂ plasma \\nStep 4: Second N₂ purge. Repeat.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It increased until it reached a plateau at 0.2 Å/cycle after a 4 s pulse. Shorter pulses (1–2 s) gave no measurable thickness.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The surface became fully covered with precursor after 4 s; longer pulses couldn’t add more copper because all reaction sites were occupied a sign of self-limiting ALD behavior.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mostly yes—EDS showed it was mainly copper metal with <5% carbon impurity. The growth rate (0.2 Å/cycle) is within the typical range for copper ALD, making it potentially useful for chip interconnects or barrier layers.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":3,"width":560,"height":284}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/Coyle et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":564,"height":287,"image_format":"jpeg","image_sha256":"df7f976113482658f4df2439bc1b11b8f8f6f3741ef40d2b7fed7f8946901bcf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_45_figure_4.jpg","caption":"Figure 4. (Color online) The growth per cycle for remote plasma and thermal ALD of Pt and remote plasma ALD of $\\mathrm{PtO_2}$ as a function of the substrate temperature. At $100^{\\circ}\\mathrm{C}$ the growth rate of the remote plasma process including a $\\mathrm{H}_{2}$ gas exposure step in the ALD cycle is shown. For thermal ALD of $\\mathrm{Pt}$ deposition took place on $10 \\mathrm{nm}$ thick $\\mathrm{Pt}$ starting surfaces prepared by remote plasma ALD at $300^{\\circ}\\mathrm{C}$ The lines serve as guides to the eye.","id":"train/atomic-layer-deposition/experimental-usecase/45/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/45/figure_4","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the growth per cycle of different ALD processes (Thermal ALD Pt , Remote plasma ALD Pt , Remote plasma ALD PtO2) at varying deposition temperatures. Remote plasma Pt ALD yields a relatively weak temperature dependence, whereas thermal ALD Pt shows little growth at lower temperatures and increases sharply only above ~200 °C. Growth per cycle decreases with temperature for remote plasma PtO2 ALD.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition temperature (°C) | Process | Growth per cycle (nm/cycle) |\\n|---|---|---|\\n| 150 | Thermal ALD Pt | 0.001 |\\n| 200 | Thermal ALD Pt | 0.01 |\\n| 225 | Thermal ALD Pt | 0.035 |\\n| 250 | Thermal ALD Pt | 0.037 |\\n| 300 | Thermal ALD Pt | 0.044 |\\n| 150 | Thermal ALD Pt | 0.001 |\\n| 100 | Remote plasma ALD Pt with H2 step | 0.038 |\\n| 200 | Remote plasma ALD Pt | 0.044 |\\n| 300 | Remote plasma ALD Pt | 0.046 |\\n| 100 | Remote plasma ALD PtO2 | 0.06 |\\n| 200 | Remote plasma ALD PtO2 | 0.057 |\\n| 300 | Remote plasma ALD PtO2 | 0.047 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thermal ALD Pt.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Temperatures around ~225–300 °C are closest to an ideal ALD window for thermal Pt ALD. In this range, the measured growth per cycle changes only slightly (within the error bars), indicating relatively stable, self-limited behavior. At lower temperatures, the growth rate is changing rapidly.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Remote plasma ALD Pt is the least temperature-sensitive between 200 and 300 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"At 200 °C, the values rank as:\\n1. Remote plasma ALD PtO₂ (~0.058–0.060 nm/cycle)\\n2. Remote plasma ALD Pt (~0.045 nm/cycle)\\n3. Thermal ALD Pt (~0.01–0.02 nm/cycle)\"}]}]","bbox":[{"panel_id":"a","x":2,"y":1,"width":597,"height":458}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":605,"height":464,"image_format":"jpeg","image_sha256":"3e6912ef0fd19dbc194f0fac994cf8183223dedb2a03bba9cef87d7d44e7e5b6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_49_figure_1.jpg","caption":"Figure 1. a) The film thickness of the $\\mathrm{MoS_2}$ film deposited at different temperatures ranging from 175 to $300^{\\circ}C$ The thickness of 50 ALD cycles $\\mathrm{MoS_2}$ film as a function of the b) $\\mathsf{H}_2\\mathsf{S}$ exposure time, c) dose time, and d) exposure time of $\\mathsf{C}_7\\mathsf{H}_8\\mathsf{Mo}(\\mathsf{CO})_3$ e) Spectroscopic ellipsometry curves for $\\mathrm{MoS_2}$ films deposited with varying ALD cycles (25, 50, 100, 200, and 300). f) There is a linear dependence between the number of ALD cycles and the deposited film thickness. The ALD reaction temperature was $250^{\\circ}C$ for all parameter variations except (a).","id":"train/atomic-layer-deposition/experimental-usecase/49/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/49/figure_1","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"},{"panel_id":"e","label":"multiple line chart"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"d","label":"scatter plot"},{"panel_id":"f","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This multi-panel figure characterizes the Atomic Layer Deposition (ALD) of MoS₂ films, showing how thickness depends on various parameters such as (a) temperature, (b) H₂S exposure time, (c) precursor dose time, (d) Mo-precursor exposure time, (e) optical properties versus cycles, and (f) linear thickness growth with cycle number. The scatter plot shows the relationship between reaction temperature and layer thickness after 100 ALD cycles. The film thickness after 100 cycles peaks at approximately 250 °C (~9 nm), defining the optimal ALD window. Below 225 °C, growth is slow due to kinetic limitations, while above 275 °C, the thickness drops sharply, likely due to desorption or precursor decomposition.\"},{\"panel_id\":\"b\",\"text\":\"The scatter plot shows the relationship between H₂S exposure time and layer thickness after 50 ALD cycles. The thickness saturates at approximately 30 s exposure time.\"},{\"panel_id\":\"c\",\"text\":\"The scatter plot illustrates the effect of C₇H₈Mo(CO)₃ dose time on layer thickness after 50 ALD cycles. The growth saturates at approximately 0.8 s dose time.\"},{\"panel_id\":\"d\",\"text\":\"The scatter plot illustrates the effect of C₇H₈Mo(CO)₃ exposure time on layer thickness after 50 ALD cycles. The thickness shows a peak at 20 s, followed by a decrease, suggesting possible etching or desorption at very long exposure times.\"},{\"panel_id\":\"e\",\"text\":\"The line chart depicts the change in ellipsometric delta (Δ) with respect to wavelength. The delta parameter shifts monotonically with increasing ALD cycles.\"},{\"panel_id\":\"f\",\"text\":\"The scatter plot shows the linear relationship between ALD cycle number and layer thickness. The graph confirms a highly linear growth per cycle (GPC) of 0.11 nm/cycle with R² = 0.994, demonstrating that the process is stable and self-limiting.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Temperature (°C) | Layer Thickness After 100 ALD Cycles (nm) |\\n|---|---|\\n| 175 | 0.7 |\\n| 200 | 3 |\\n| 225 | 8 |\\n| 250 | 9 |\\n| 275 | 7.8 |\\n| 285 | 9.1 |\\n| 300 | 4 |\"},{\"panel_id\":\"b\",\"text\":\"| H2S Exposure Time (s) | Layer Thickness After 50 ALD Cycles (nm) |\\n|---|---|\\n| 0.1 | 0.2 |\\n| 1 | 2 |\\n| 5 | 3.1 |\\n| 10 | 3.3 |\\n| 30 | 4.7 |\\n| 40 | 4 |\\n| 60 | 4.7 |\"},{\"panel_id\":\"c\",\"text\":\"| C7H8Mo(CO)3 Dose Time (s) | Layer Thickness After 50 ALD Cycles (nm) |\\n|---|---|\\n| 0 | 0 |\\n| 0.25 | 3 |\\n| 0.5 | 4.2 |\\n| 0.75 | 4.8 |\\n| 1 | 4.7 |\\n| 1.5 | 5.1 |\"},{\"panel_id\":\"d\",\"text\":\"| C7H8Mo(CO)3 Exposure Time (s) | Layer Thickness After 50 ALD Cycles (nm) |\\n|---|---|\\n| 5 | 2.7 |\\n| 10 | 4.9 |\\n| 20 | 6.5 |\\n| 30 | 4.7 |\"},{\"panel_id\":\"e\",\"text\":\"| Wavelength (nm) | Delta (degree) | Number of cycles |\\n|---|---|---|\\n| 370 | 164 | 0 cycle |\\n| 370 | 158 | 25 cycle |\\n| 370 | 145 | 50 cycle |\\n| 370 | 135 | 100 cycle |\\n| 370 | 105 | 200 cycle |\\n| 370 | 72 | 300 cycle |\\n| 400 | 167 | 0 cycle |\\n| 400 | 163 | 25 cycle |\\n| 400 | 150 | 50 cycle |\\n| 400 | 140 | 100 cycle |\\n| 400 | 110 | 200 cycle |\\n| 400 | 83 | 300 cycle |\\n| 500 | 170 | 0 cycle |\\n| 500 | 166 | 25 cycle |\\n| 500 | 154 | 50 cycle |\\n| 500 | 143 | 100 cycle |\\n| 500 | 115 | 200 cycle |\\n| 500 | 93 | 300 cycle |\\n| 600 | 171 | 0 cycle |\\n| 600 | 169 | 25 cycle |\\n| 600 | 157 | 50 cycle |\\n| 600 | 147 | 100 cycle |\\n| 600 | 120 | 200 cycle |\\n| 600 | 98 | 300 cycle |\\n| 700 | 173 | 0 cycle |\\n| 700 | 171 | 25 cycle |\\n| 700 | 160 | 50 cycle |\\n| 700 | 149 | 100 cycle |\\n| 700 | 124 | 200 cycle |\\n| 700 | 104 | 300 cycle |\\n| 800 | -- | 0 cycle |\\n| 800 | -- | 25 cycle |\\n| 800 | -- | 50 cycle |\\n| 800 | -- | 100 cycle |\\n| 800 | -- | 200 cycle |\\n| 800 | 109 | 300 cycle |\\n| 900 | -- | 0 cycle |\\n| 900 | -- | 25 cycle |\\n| 900 | -- | 50 cycle |\\n| 900 | -- | 100 cycle |\\n| 900 | -- | 200 cycle |\\n| 900 | 114 | 300 cycle |\"},{\"panel_id\":\"f\",\"text\":\"| ALD Cycle Number | Layer Thickness (nm) |\\n|---|---|\\n| 0 | 0 |\\n| 25 | 1 |\\n| 50 | 4 |\\n| 101 | 8 |\\n| 200 | 19 |\\n| 301 | 33 |\"}]","vqa":"[{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It confirms precise, atomic-level thickness control and excellent film uniformity. These characteristics are essential for reliably fabricating thin MoS₂ channels or barriers in scalable transistors and memory devices.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The optimal temperature is 250°C (highest thickness, stable growth). The film thickness drops significantly to <4 nm (compared to ~9 nm at 250°C). This indicates that 300°C is outside the stable ALD window, likely causing precursor desorption or parasitic etching, resulting in a much thinner film than intended.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing dose saturates the surface coverage (good). However, extending the residence time (exposure) beyond 20s causes a loss in thickness (bad).\\nThis suggests a competing desorption or etching mechanism at long exposures. The process engineer cannot simply set an arbitrarily long exposure time \\\"just to be safe.\\\" They must choose a value (e.g., 20s) that ensures saturation without crossing into the regime where the film begins to degrade or desorb.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies a Nucleation Delay. In an ideal scenario, the line would pass through zero. A negative intercept signifies that during the first ~10 cycles, virtually no film was deposited (incubation period). The precursor struggled to nucleate on the initial substrate surface, requiring several cycles to establish a seed layer before the steady-state growth rate of 0.11 nm/cycle was achieved.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":456,"height":350},{"panel_id":"b","x":5,"y":358,"width":450,"height":345},{"panel_id":"c","x":471,"y":2,"width":449,"height":354},{"panel_id":"d","x":471,"y":362,"width":450,"height":343},{"panel_id":"e","x":922,"y":4,"width":447,"height":354},{"panel_id":"f","x":931,"y":357,"width":438,"height":347}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/Shen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":1372,"height":709,"image_format":"jpeg","image_sha256":"534498c7646df77586a9d45fcf8f97347ad43e1825c35ebf7b4bc7b39c31182d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_50_fig_11.jpg","caption":"Fig. 11 Optical band gap $(E_{\\mathrm{g,opt}})$ as a function of DF for ZnO:X $(X = \\mathsf{Al},\\mathsf{B})$ TIB was used as a B source while DMAI and TMA were used as Al sources. The films were deposited on $\\mathrm{SiO_2}$ substrates at $150^{\\circ}C$","id":"train/atomic-layer-deposition/experimental-usecase/50/fig_11","sample_id":"atomic-layer-deposition/experimental-usecase/50/fig_11","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the linear relationship between doping fraction (DF) and the optical band gap (Eg_opt) for three different materials: TIB, DMAI, and TMA.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Doping fraction, DF | TIB | DMAI | TMA |\\n|---|---|---|---|\\n| 0.00 | 3.25 | 3.25 | 3.25 |\\n| 0.02 | 3.30 | 3.30 | 3.30 |\\n| 0.04 | 3.35 | 3.35 | 3.35 |\\n| 0.06 | 3.40 | 3.40 | 3.40 |\\n| 0.08 | 3.45 | 3.45 | 3.45 |\\n| 0.10 | 3.50 | 3.50 | 3.50 |\\n| 0.12 | 3.55 | 3.55 | 3.55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The increase in bandgap can be attributed to the Burstein–Moss shift, but only for the range of doping values for which the carrier concentration n increases\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The optical band gap (Eg,opt) of the ZnO:X films was extracted from so-called Tauc plots (i.e., (e2E^2)^2 as a function\\nof the photon energy E, where e2 is the imaginary part of the dielectric function extracted from the SE data\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For ZnO:B, as well as for ZnO:Al, the optical band gap increases with increasing doping fraction. This increase can be attributed to the Burstein–Moss shift, for the range of DF values for which the carrier concentration n increases. For higher DF values (DF > 0.034), in the case of ZnO:B and ZnO:Al (DMAI), the increase in the optical bandgap can be attributed to effects related to the grain size, strain and other types of imperfections.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":7,"width":365,"height":289}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/Garcia-Alonso et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":369,"height":297,"image_format":"jpeg","image_sha256":"a8a021cd8363e79dce5ac504bc29f2859c22b4a4c977fc9c76fb53fac3d99e59","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_50_fig_2.jpg","caption":"Fig. 2 Saturation curves of the $\\mathrm{ZnO:}$ B process $(m = 4)$ at $150^{\\circ}C$ (a) TIB precursor dose, (b) TIB precursor purge, (c) $\\mathsf{DI - H}_2\\mathsf{O}$ dose, and (d) $\\mathsf{DI - H}_2\\mathsf{O}$ purge. The growth per supercycle (GPSC) for each condition was averaged over 10 supercycles. The $\\mathrm{ZnO}$ standard conditions are specified elsewhere (50 ms DEZ dose, 5 s purge, 20 ms $\\mathsf{H}_2\\mathsf{O}$ dose, 6 s purge) and the process saturated at a GPC of $0.2\\mathrm{nm}$ per cycle for an intrinsic $\\mathrm{ZnO}$ film deposited at $150^{\\circ}C$","id":"train/atomic-layer-deposition/experimental-usecase/50/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/50/fig_2","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"},{"panel_id":"d","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image plots GPSC as a function of TIB dose\"},{\"panel_id\":\"b\",\"text\":\"The image plots GPSC as a function of TIB purge time\"},{\"panel_id\":\"c\",\"text\":\"The image plots GPSC as a function of DI-H₂O dose\"},{\"panel_id\":\"d\",\"text\":\"The image plots GPSC as a function of DI-H₂O purge time\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TIB dose (ms) | GPSC (nm/supercycle) |\\n|---|---|\\n| 0 | 0.7 |\\n| 10 | 0.6 |\\n| 20 | 0.6 |\\n| 30 | 0.6 |\\n| 40 | 0.6 |\\n| 50 | 0.6 |\\n| 60 | 0.6 |\\n| 70 | 0.6 |\\n| 80 | 0.6 |\"},{\"panel_id\":\"b\",\"text\":\"| TIB purge (s) | GPSC (nm/supercycle) |\\n|---|---|\\n| 0 | 0.6 |\\n| 1 | 0.6 |\\n| 2 | 0.6 |\\n| 3 | 0.6 |\\n| 4 | 0.6 |\\n| 5 | 0.6 |\\n| 6 | 0.6 |\\n| 7 | 0.6 |\\n| 8 | 0.6 |\"},{\"panel_id\":\"c\",\"text\":\"| DI-H₂O dose (ms) | GPSC (nm/supercycle) |\\n|---|---|\\n| 0 | 0.5 |\\n| 10 | 0.6 |\\n| 20 | 0.6 |\\n| 30 | 0.6 |\\n| 40 | 0.6 |\\n| 50 | 0.6 |\\n| 60 | 0.6 |\\n| 70 | 0.6 |\\n| 80 | 0.6 |\\n| 90 | 0.6 |\\n| 100 | 0.6 |\"},{\"panel_id\":\"d\",\"text\":\"| DI-H₂O purge (s) | GPSC (nm/supercycle) |\\n|---|---|\\n| 0 | 0.6 |\\n| 1 | 0.6 |\\n| 2 | 0.6 |\\n| 3 | 0.6 |\\n| 4 | 0.6 |\\n| 5 | 0.6 |\\n| 6 | 0.6 |\\n| 7 | 0.6 |\\n| 8 | 0.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reduction in GSPC with increasing TIB dose observed in a could be the result of a slight etching of the ZnO by the TIB but it could also be due to the inhibition of ZnO growth after a TIB pulse, as observed for DMAI. However, the experiment carried out in which the film growth after every cycle (either DEZ or TIB cycle), monitored by spectroscopic ellipsometry, showed the change in thickness as a function of the number of cycles deduced from the measurements. From that it is clear that the ZnO was not etched by TIB (i.e., the film thickness did not decrease after one B cycle) but that the TIB\\npulse led to an inhibition in the subsequent ZnO film growth. This growth inhibition took place during several cycles following the TIB pulse, and could also be seen from a second experiment\\nin which a supercycle with m = 19 was used (i.e., a total of 20 cycles comprising 19 ZnO + 1 TIB), it was evident that one TIB pulse affected the ZnO during many cycles.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Growth per super cycle as this ALD process involves doping ZnO with boron. The saturation curves for the gas exposures and purges of the B cycle of an ALD supercycle corresponding to four DEZ\\ncycles and one TIB cycle for the ZnO:B process. These data were obtained by varying the duration of one of the ALD cycle steps, while keeping the duration of other steps sufficiently long to ensure either saturation of surface reactions or sufficient purging.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Temperature of deposition = 150 °C\\n2. Standard recipe = 50 ms DEZ dose, 5 s purge, 20 ms H2O dose, 6 s purge\\n3. Saturated GPC = 0.2 nm/cycle\"}]}]","bbox":[{"panel_id":"a","x":4,"y":-1,"width":458,"height":317},{"panel_id":"b","x":489,"y":14,"width":391,"height":306},{"panel_id":"c","x":7,"y":330,"width":455,"height":308},{"panel_id":"d","x":494,"y":336,"width":385,"height":304}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/Garcia-Alonso et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":880,"height":644,"image_format":"jpeg","image_sha256":"6f3a643fefa5b48548c14541558e555175a04cb9a4ba495de7d63407ec180772","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_50_fig_3.jpg","caption":"Fig 3 Doping fraction (DF) as a function of the doping cycle ratio $R_{x}$ for depositions at $150^{\\circ}C$ , as measured by X-ray photoelectron spectroscopy (XPS). The doping cycle ratio $R_{x}$ (i.e. the ratio of the number of doping ALD cycles $(X = \\mathsf{Al}, \\mathsf{B})$ over the total ALD cycles in one supercycle) is calculated as $1 / (m + 1)$ . The estimated relative error for the doping fraction is $\\sim 10\\%$ . The lines serve as guides to the eye.","id":"train/atomic-layer-deposition/experimental-usecase/50/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/50/fig_3","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot shows the relationship between dopant cycle ratio and doping fraction (DF) for TIB, DMAI, and TMA.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Dopant Cycle Ratio (R) | TIB (DF) | DMAI (DF) | TMA (DF) |\\n|-------------------------|----------|-----------|----------|\\n| 0.02 | 0.015 | 0.020 | 0.025 |\\n| 0.04 | 0.025 | 0.045 | 0.060 |\\n| 0.06 | 0.035 | 0.065 | 0.095 |\\n| 0.08 | 0.045 | 0.085 | 0.135 |\\n| 0.10 | 0.055 | 0.105 | 0.175 |\\n| 0.15 | 0.075 | 0.115 | 0.215 |\\n| 0.20 | 0.095 | — | — |\\n| 0.25 | 0.115 | — | — |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Trimethylaluminium (TMA) \\n2. Dimethylaluminium isopropoxide (DMAI)\\n3. Triisopropyl borate (TIB)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"From the figure, comparing all three precursors, TIB results in the lowest incorporation of doping elements while TMA shows the greatest doping incorporation for same dopant cycle ratio.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This is in agreement with the data obtained by RBS/PIGE analysis, where the areal densities of B or Al per cycle were, on average, ~3.2 at per nm2 per supercycle (TIB), ~4.4 at per nm2 per supercycle (DMAI) and ~9.0 at per nm2 per supercycle (TMA ) for the cycle ratios (m) investigated. A combination of precursor reactivity and molecule size is most likely the cause of this trend. The bulkier isopropyl ligands in the TIB and DMAI precursors are likely to cause steric hindrance on the film surface, resulting in a more sparse distribution of the dopants on the surface and therefore a lower doping fraction.36 This is expected from the decreasing size of the monomers (TIB > DMAI > TMA).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is worth highlighting that the doping concentrations do not relate directly to the doping efficiency,\\nas some of the doping material might have formed metal oxide or alloy clusters (e.g. Al2O3) rather than merely doping the film. In this case, the dopant atoms do not contribute donating any electrons to the ZnO film.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":5,"width":620,"height":451}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/Garcia-Alonso et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":625,"height":463,"image_format":"jpeg","image_sha256":"34f16fb1abd232eb3f78ef62f3f46346bfef7936d22c1c249cccb57a7d0962ae","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_50_fig_5.jpg","caption":"Fig. 5 Resistivity, $\\rho$ (a), carrier concentration, $n$ , and mobility, $\\mu$ (b) and doping fraction, DF, and doping efficiency, $\\eta$ (c) of the ZnO:B films as a function of the deposition temperature. The films with thicknesses of $45 \\pm 5 \\mathrm{nm}$ were deposited on glass substrates. A cycle ratio of $m = 24$ was employed as it resulted in optimised resistivity in the doping series at $150^{\\circ}\\mathrm{C}$ . The lines serve as guides to the eye. The estimated relative statistical uncertainties for $n$ , $\\mu$ , DF and $\\eta$ are $3\\%$ , $5\\%$ , $10\\%$ and $20\\%$ respectively.","id":"train/atomic-layer-deposition/experimental-usecase/50/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/50/fig_5","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"multi-axis chart"},{"panel_id":"c","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The resistivity as a funtion of temperature is plotted and it decreases as temperature increases.\"},{\"panel_id\":\"b\",\"text\":\"Both carrier concentration and mobility plotted against temperature increase with temperature, but the mobility decreases slightly at higher temperatures.\"},{\"panel_id\":\"c\",\"text\":\"Doping efficiency versus temperature shows it decreases while doping fraction increases with temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Resistivity, ρ (mΩ cm) |\\n|---|---|\\n| 150 | 3.5 |\\n| 200 | 2.5 |\\n| 250 | 2.2 |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | Carrier concentration, n (10^20 cm^-3) | Mobility, μ (cm²V^-1s^-1) |\\n|---|---|---|\\n| 150 | 2.3 | 8 |\\n| 200 | 2.6 | 11 |\\n| 250 | 2.8 | 10 |\"},{\"panel_id\":\"c\",\"text\":\"| Temperature (°C) | Doping fraction, DF | Doping Efficiency, η (%) |\\n|---|---|---|\\n| 150 | 0.02 | 30 |\\n| 200 | 0.025 | 25 |\\n| 250 | 0.03 | 20 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Compared to ZnO:Al films deposited at 250 °C, it appeared that processing at 150 °C led to lower absolute values of conductivity (i.e. a higher resistivity)\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The doping fraction increased with increasing deposition temperature, whereas the doping efficiency decreased slightly, despite the slight increase in carrier concentration with temperature.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It can be concluded that ~200 °C is the optimum deposition temperature for ZnO:B. However, it should be noted that the deposition temperature that is feasible for certain applications can be limited to lower temperatures than 200 °C.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The resistivity of the ZnO:B films decreased from 3.5 mOhm cm at 150 °C to 2.2 mOhm cm when deposited at temperatures of 200–240 °C. This was due to an increase in carrier concentration from 2.2* 10^20 /cm3 to 2.8* 10^20 /cm3 and an increase in mobility from 8 to 10.5 cm2 /Vs.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":538,"height":313},{"panel_id":"b","x":0,"y":335,"width":584,"height":370},{"panel_id":"c","x":2,"y":707,"width":579,"height":355}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/Garcia-Alonso et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":586,"height":1070,"image_format":"jpeg","image_sha256":"e0f526ccecc8cbd299c326a242d068ea3ec7c7a6a124a0e2200e9e14a0b77318","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_50_fig_7.jpg","caption":"Fig. 7 (a) Intensity ratio $I_{002} / I_{100}$ of the (002) and (100) peaks measured by XRD on the ZnO:X $(X = \\mathsf{Al},\\mathsf{B})$ films reflecting the change in texture from $\\langle 002\\rangle$ to $\\langle 001\\rangle$ and (b) $c$ -lattice parameter of the ZnO wurtzite unit cell and the corresponding $2\\theta$ position of the (002) peak as a function of the doping fraction in the ZnO:X $(X = \\mathsf{Al},\\mathsf{B})$ . The films were deposited at $150^{\\circ}C$ on glass substrates. The $c$ -lattice parameter of the wurtzite ZnO crystal is $5.207\\mathrm{\\AA}$ 6","id":"train/atomic-layer-deposition/experimental-usecase/50/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/50/fig_7","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the variation of I_002/I_100 ratio with doping fraction\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the variation of c-lattice parameter with doping fraction, along with the 2θ_002 angle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Doping fraction, DF | I_002/I_100 TIB |I_002/I_100 DMAI |\\n|---|---|---|\\n| 0.00 | 2.20 | 2.20 | \\n| 0.02 | 1.80 | 1.30 | \\n| 0.04 | 1.60 | 0.60 | \\n| 0.06 | 1.30 | 0.50 | \\n| 0.08 | 0.80 | - | \\n| 0.10 | 0.40 | - |\"},{\"panel_id\":\"b\",\"text\":\"| Doping fraction, DF | c-lattice parameter, Å | 2θ_002 |\\n|---|---|---|\\n| 0.00 | 5.22 | 34 |\\n| 0.02 | 5.20 | 34.2 |\\n| 0.04 | 5.18 | 34.4 |\\n| 0.06 | 5.16 | 34.6 |\\n| 0.08 | 5.14 | - |\\n| 0.10 | 5.12 | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is a guide to the eye, the ratio I002/I100 for a powder pattern, i.e., the pattern characteristic for a film with randomly oriented crystals, has been included to illustrate the change in texture from (002) to (100).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ratio I002/I100 for a powder pattern, i.e., the pattern characteristic for a film with randomly oriented crystals, has been included to illustrate the change in texture from (002) to (100). Secondly,\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The shift of the (002) peak as a function of the doping fraction, as a consequence of the\\ncompression of the unit cell (i.e. a decrease of the c-lattice parameter) with increasing doping fractions. It should be noticed that the c-lattice parameter for the pure ZnO films (i.e., DF = 0) was slightly larger (5.219 Å) than the value reported for the wurtzite ZnO crystal lattice (5.207 Å).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A significant shift of the peaks to higher 2theta values was observed for increasing B fractions, which\\nwas likely due to compressive stress in the ZnO unit cell caused by the substitution of Zn2+ (ionic radius of 0.60 Å, assuming a four-coordinate environment as expected for wurtzite structures)\\n132 with smaller B3+ ions (four-coordinate ionic radius of 0.11 Å).132 This effect was significantly smaller in the case of ZnO:Al films doped by DMAI (Al3+, four-coordinate ionic radius of 0.39 Å).\"}]}]","bbox":[{"panel_id":"a","x":0,"y":5,"width":565,"height":272},{"panel_id":"b","x":4,"y":293,"width":618,"height":326}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/Garcia-Alonso et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":627,"height":619,"image_format":"jpeg","image_sha256":"1a87cbb32c784f80fe2dda489bdb6aea86e83904cf509e7e88f4c776782e08e6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_54_figure_11.jpg","caption":"Figure 11. (Color online) Galvanostatic cycling for TiN prepared by sputtering and remote plasma ALD at a constant current of $3\\mu \\mathrm{A} / \\mathrm{cm}^2$ . The remote plasma ALD TiN film shows a lower capacity for Li, indicating better barrier properties.","id":"train/atomic-layer-deposition/experimental-usecase/54/figure_11","sample_id":"atomic-layer-deposition/experimental-usecase/54/figure_11","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the Li-capacity (µAh/cm²) of two different TiN samples over galvanostatic cycles. The blue circles represent 'Sputtered TiN', while the red circles represent 'TiN (H₂-N₂ 30:4 plasma)'. Both samples exhibit a slight increase in capacity over time.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Galvanostatic cycles | Li-capacity (µAh/cm²) Sputtered TiN | Li-capacity (µAh/cm²) TiN | \\n|---|---|---|\\n| 0 | 0.3 | 0.2 |\\n| 5 | 0.3 | 0.2 |\\n| 10 | 0.3 | 0.2 |\\n| 15 | 0.3 | 0.2 |\\n| 20 | 0.3 | 0.2 |\\n| 25 | 0.3 | 0.2 |\\n| 30 | 0.3 | 0.2 |\\n| 35 | 0.3 | 0.2 |\\n| 40 | 0.3 | 0.2 |\\n| 45 | 0.3 | 0.2 |\\n| 50 | 0.3 | 0.2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Sputtered TiN and ALD-grown TiN.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.3 µAh/cm².\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.2 µAh/cm².\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":661,"height":506}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":666,"height":509,"image_format":"jpeg","image_sha256":"53de9621c45afeae93eb0522998afddf3a1245ea518e7592e560845db1b8ebbc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_59_fig_4.jpg","caption":"FIG. 4. (Color online) Growth rate per cycle of $\\mathrm{TaN}_{x,x\\leqslant 1}$ films as a function of the ALD process parameters: (a) PDMAT dosing time, (b) $\\mathrm{H}_{2}$ plasma exposure time, and (c) deposition temperature. The growth rates are determined by in situ spectroscopic ellipsometry by varying the process parameters during one deposition run (closed symbols) and by the deposition of a thick film under constant process conditions (open symbols). The lines in (a) and (b) are exponential fits to the data.","id":"train/atomic-layer-deposition/experimental-usecase/59/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/59/fig_4","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the growth rate (nm/cycle) versus the PDMAT dosing (s). The growth rate increases with increasing PDMAT dosing time until it plateaus.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the growth rate (nm/cycle) versus the plasma exposure time (s). The growth rate increases with increasing plasma exposure time.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the growth rate (nm/cycle) versus the deposition temperature (°C). The growth rate remains constant across different deposition temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| PDMAT dosing (s) | Growth rate (nm/cycle) |\\n|---|---|\\n| 0 | 0.00 |\\n| 1 | 0.035 |\\n| 2 | 0.035 |\\n| 3 | 0.040 |\\n| 4 | 0.040 |\\n| 5 | 0.040 |\"},{\"panel_id\":\"b\",\"text\":\"| Plasma exposure time (s) | Growth rate (nm/cycle) |\\n|---|---|\\n| 0 | 0.00 |\\n| 5 | 0.04 |\\n| 10 | 0.042 |\\n| 15 | - |\\n| 20 | - |\\n| 25 | - |\\n| 30 | 0.05 |\"},{\"panel_id\":\"c\",\"text\":\"| Deposition temperature (°C) | Growth rate (nm/cycle) |\\n|---|---|\\n| 150 | 0.05 |\\n| 175 | 0.05 |\\n| 200 | 0.05 |\\n| 225 | 0.05 |\\n| 250 | 0.05 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The saturation point can be observed after approximately three seconds of PDMAT.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"To analyze the growth rate for the ALD process, the deposition temperature was changed from 150 °C to 250 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The growth rate remains constant across deposition temperatures.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes.\"}]}]","bbox":[{"panel_id":"a","x":7,"y":17,"width":603,"height":437},{"panel_id":"b","x":5,"y":482,"width":605,"height":447},{"panel_id":"c","x":10,"y":950,"width":600,"height":435}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/Langereis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"59","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":611,"height":1403,"image_format":"jpeg","image_sha256":"3c028150e7a3abbc5a36e11fe962058bf2dc6405ab120e291e998cf487bc0d69","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_59_fig_6.jpg","caption":"FIG. 6. (Color online) Resistivity of $\\mathrm{TaN}_{x,x\\leqslant 1}$ films with an $\\sim 30 \\mathrm{nm}$ thickness deposited by remote plasma ALD using different $\\mathrm{H}_{2}$ plasma exposure times within the cycle. The resistivity is determined from in situ SE (closed symbols) and ex situ FPP measurements (open symbols). The line serves as a guide to the eyes. The low-resistivity $\\mathrm{TaN}_{x,x\\leqslant 1}$ film deposited using $3\\mathrm{~s~H}_{2}$ plasma in the ALD cycle has been indicated separately (open triangle).","id":"train/atomic-layer-deposition/experimental-usecase/59/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/59/fig_6","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between resistivity and plasma exposure time (s). The fitted curve indicates that resistivity decreases as plasma exposure time increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Plasma exposure time (s) | In-situ SE | Ex-situ SE |\\n| --- | --- | --- |\\n| 0 | 10^4 | 10^5 |\\n| 5 | - | - |\\n| 10 | 10^3 | 10^3 |\\n| 15 | - | - |\\n| 20 | - | - |\\n| 25 | - | - |\\n| 30 | - | 6*10^2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This process corresponds to a remote plasma ALD.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The resistivity decreases as the plasma exposure time increases for both measurements (in-situ and ex-situ SE).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The lowest resistivity is observed after 30 s of plasma exposure.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There is a slight difference between the two SE measurements. The ex-situ SE shows higher resistivity values, which could be related to environmental contamination.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":3,"width":601,"height":462}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/Langereis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"59","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":605,"height":466,"image_format":"jpeg","image_sha256":"a6691fc810289d1e368efd517c9850903a722f0cc482e1f0b0632e3620a3aef2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_60_figure_2.jpg","caption":"Figure 2. Saturation plots of ALD $\\mathrm{Y}_2\\mathrm{O}_3$ films at a substrate temperature $200^{\\circ}\\mathrm{C}$ with $\\mathrm{Y}(\\mathrm{EtCp})_2(\\mathrm{iPr - amd})$ and (a) $\\mathrm{H}_2\\mathrm{O}$ , (b) $\\mathrm{O}_2$ plasma, and (c) $\\mathrm{H}_2\\mathrm{O}$ plasma as a reactant. (d) Film thickness determined by in situ SE versus the ALD cycle number under saturated conditions.","id":"train/atomic-layer-deposition/experimental-usecase/60/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/60/figure_2","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"},{"panel_id":"d","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Scatter plot showing the growth per cycle (Å/cycle) of Y_2O_3 films as a function of pulse time for precursors Y(EtCp)_2(iPr-amd) and H_2O. The data confirms self-limiting surface reactions\"},{\"panel_id\":\"b\",\"text\":\"Scatter plot showing the growth per cycle (Å/cycle) of Y_2O_3 films as a function of pulse time for precursors Y(EtCp)_2(iPr-amd) and O_2 plasma. The data confirms self-limiting surface reactions\"},{\"panel_id\":\"c\",\"text\":\"Scatter plot showing the growth per cycle (Å/cycle) of Y_2O_3 films as a function of pulse time for precursors Y(EtCp)_2(iPr-amd) and H_2O plasma. The data confirms self-limiting surface reactions\"},{\"panel_id\":\"d\",\"text\":\"The chart showing the thickness of the Y_2O_3 films as a function of ALD cycle number for H_2O plasma, O_2 plasma, and H_2O processes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulse time (s) | GPC (Å/cycle) | Precursor|\\n|---|---|---|\\n| 0,00 | 0,00 | Water |\\n| 1,02 | 0,35 | Water |\\n| 1,93 | 0,52 | Water |\\n| 3,86 | 0,62 | Water |\\n| 6,10 | 0,70 | Water |\\n| 7,83 | 0,74 | Water |\\n| 9,97 | 0,73 | Water |\\n| 15,05 | 0,73 | Water |\\n| 18,00 | 0,72 | Water |\\n| 20,03 | 0,72 | Water |\\n| 0,00 | 0,00 | Y(EtCp)2(iPr-amd) |\\n| 1,93 | 0,32 | Y(EtCp)2(iPr-amd) |\\n| 5,19 | 0,43 | Y(EtCp)2(iPr-amd) |\\n| 8,03 | 0,53 | Y(EtCp)2(iPr-amd) |\\n| 9,86 | 0,62 | Y(EtCp)2(iPr-amd) |\\n| 12,10 | 0,70 | Y(EtCp)2(iPr-amd) |\\n| 14,85 | 0,74 | Y(EtCp)2(iPr-amd) |\\n| 18,20 | 0,71 | Y(EtCp)2(iPr-amd) |\\n| 20,14 | 0,73 | Y(EtCp)2(iPr-amd) |\\n| 24,81 | 0,71 | Y(EtCp)2(iPr-amd) |\\n| 29,69 | 0,73 | Y(EtCp)2(iPr-amd) |\"},{\"panel_id\":\"b\",\"text\":\"| Pulse time (s) | GPC (Å/cycle) | Precursor|\\n|---|---|---|\\n| 0,00 | 0,00 | O2 Plasma |\\n| 0,94 | 0,37 | O2 Plasma |\\n| 1,89 | 0,54 | O2 Plasma |\\n| 2,94 | 0,66 | O2 Plasma |\\n| 3,99 | 0,73 | O2 Plasma |\\n| 5,03 | 0,81 | O2 Plasma |\\n| 5,77 | 0,84 | O2 Plasma |\\n| 8,29 | 0,86 | O2 Plasma |\\n| 10,17 | 0,85 | O2 Plasma |\\n| 11,96 | 0,84 | O2 Plasma |\\n| 0,00 | 0,00 | Y(EtCp)2(iPr-amd) |\\n| 1,99 | 0,46 | Y(EtCp)2(iPr-amd) |\\n| 4,83 | 0,66 | Y(EtCp)2(iPr-amd) |\\n| 8,18 | 0,71 | Y(EtCp)2(iPr-amd) |\\n| 9,86 | 0,80 | Y(EtCp)2(iPr-amd) |\\n| 11,96 | 0,84 | Y(EtCp)2(iPr-amd) |\\n| 15,10 | 0,87 | Y(EtCp)2(iPr-amd) |\\n| 17,94 | 0,89 | Y(EtCp)2(iPr-amd) |\\n| 19,72 | 0,87 | Y(EtCp)2(iPr-amd) |\\n| 25,17 | 0,87 | Y(EtCp)2(iPr-amd) |\\n| 30,00 | 0,86 | Y(EtCp)2(iPr-amd) |\"},{\"panel_id\":\"c\",\"text\":\"| Pulse time (s) | GPC (Å/cycle) | Precursor|\\n|---|---|---|\\n| 0,00 | 0,00 | H2O Plasma |\\n| 0,73 | 0,53 | H2O Plasma |\\n| 1,99 | 0,76 | H2O Plasma |\\n| 3,67 | 0,91 | H2O Plasma |\\n| 5,98 | 0,99 | H2O Plasma |\\n| 7,66 | 1,08 | H2O Plasma |\\n| 9,86 | 1,11 | H2O Plasma |\\n| 11,64 | 1,06 | H2O Plasma |\\n| 14,58 | 1,07 | H2O Plasma |\\n| 0,00 | 0,06 | Y(EtCp)2(iPr-amd) |\\n| 0,84 | 0,44 | Y(EtCp)2(iPr-amd) |\\n| 2,94 | 0,69 | Y(EtCp)2(iPr-amd) |\\n| 5,03 | 0,79 | Y(EtCp)2(iPr-amd) |\\n| 7,87 | 0,88 | Y(EtCp)2(iPr-amd) |\\n| 9,86 | 0,95 | Y(EtCp)2(iPr-amd) |\\n| 11,64 | 0,99 | Y(EtCp)2(iPr-amd) |\\n| 14,69 | 1,10 | Y(EtCp)2(iPr-amd) |\\n| 19,93 | 1,04 | Y(EtCp)2(iPr-amd) |\\n| 24,65 | 1,00 | Y(EtCp)2(iPr-amd) |\\n| 29,69 | 1,06 | Y(EtCp)2(iPr-amd) |\"},{\"panel_id\":\"d\",\"text\":\"| ALD cycle number | Thickness (nm) | Precursor|\\n|---|---|---|\\n| 0.00 | 0.0 | H2O |\\n| 40 | 2.65 | H2O |\\n| 68 | 5.05 | H2O |\\n| 100 | 7.68 | H2O |\\n| 0 | 0 | H2O Plasma |\\n| 42 | 4.41 | H2O Plasma |\\n| 100 | 10.39 | H2O Plasma |\\n| 0 | 0 | O2 Plasma |\\n| 50 | 4.88 | O2 Plasma |\\n| 100 | 8.67 | O2 Plasma |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Water achieves saturation faster than the yttrium precursor. The graph shows that the growth per cycle (GPC) for water stabilizes at its saturation point with a pulse time of approximately 8 seconds. In contrast, the yttrium precursor requires a longer pulse time of about 12 seconds to reach saturation level.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After ~5 seconds.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"H2O plasma.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"H2O: ~0.74 nm/cycle, O2 palsma: ~0.83 nm/cycle, H2O palsma: ~0.103 nm/cycle\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":430,"height":340},{"panel_id":"b","x":442,"y":4,"width":404,"height":335},{"panel_id":"c","x":4,"y":336,"width":442,"height":331},{"panel_id":"d","x":452,"y":336,"width":391,"height":330}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/Zhao et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"60","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":847,"height":669,"image_format":"jpeg","image_sha256":"117f6d27ab4f959906f363d46b0624650c5f3dab2f599955a45f228e1d594962","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_60_figure_8.jpg","caption":"Figure 8. Water contact angles of as-deposited and $\\mathrm{Y}_2\\mathrm{O}_3$ films with a thickness of 5, 10, 20, and $30~\\mathrm{nm}$ with (a) $\\mathrm{H}_2\\mathrm{O}$ , (b) $\\mathrm{O}_2$ plasma, (c) $\\mathrm{H}_2\\mathrm{O}$ plasma, and (d) the surface free energy.","id":"train/atomic-layer-deposition/experimental-usecase/60/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/60/figure_8","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"},{"panel_id":"deposition","label":"multiple line chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":3,"width":442,"height":340},{"panel_id":"b","x":458,"y":0,"width":423,"height":350},{"panel_id":"c","x":10,"y":356,"width":435,"height":328},{"panel_id":"d","x":468,"y":349,"width":413,"height":338}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/Zhao et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"60","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":886,"height":689,"image_format":"jpeg","image_sha256":"6b568ab6324ec1cc7ac650bfe1a52472c33d48d31a545a31b0ea12ac3b13c24b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_60_figure_9.jpg","caption":"Figure 9. Water contact angles of as-deposited $30~\\mathrm{nm}$ thick $\\mathrm{Y}_2\\mathrm{O}_3$ surfaces (a) before and after annealing at $500^{\\circ}\\mathrm{C}$ for $2\\mathrm{~h}$ in static air and (b) after treatment with hexane, toluene, ethanol, and isopropanol for $24\\mathrm{~h}$ .","id":"train/atomic-layer-deposition/experimental-usecase/60/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/60/figure_9","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":8,"y":4,"width":449,"height":330},{"panel_id":"b","x":462,"y":5,"width":423,"height":326}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/Zhao et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"60","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":889,"height":336,"image_format":"jpeg","image_sha256":"a672ee10f52f2cc0bcea20718393f0b8ff38c53c880882a7f2144296138af89c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_63_fig_1.jpg","caption":"FIG. 1. Growth rate of $\\mathrm{Ga}_2\\mathrm{O}_3$ thin films as a function of (a) $\\mathrm{O}_2$ plasma flow duration at $250^{\\circ}\\mathrm{C}$ and (b) deposition temperature. TMG dose and $\\mathrm{O}_2$ plasma flow rate were constant at $0.015\\mathrm{s}$ and $25\\mathrm{scm}$ respectively. (c) $\\mathrm{Ga}_2\\mathrm{O}_3$ film thickness as a function of the number of PEALD cycles.","id":"train/atomic-layer-deposition/experimental-usecase/63/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/63/fig_1","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The deposition rate increases rapidly with increasing O₂ plasma duration up to 10 seconds, then plateaus.\"},{\"panel_id\":\"b\",\"text\":\"The deposition rate remains relatively constant across a wide range of temperatures, with a slight decrease at higher temperatures.\"},{\"panel_id\":\"c\",\"text\":\"Film thickness increases linearly with the number of PEALD cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| O2 plasma duration (s) | Deposition rate (nm/cycle) |\\n|---|---|\\n| 2 | 0.020 |\\n| 5 | 0.043 |\\n| 10 | 0.051 |\\n| 20 | 0.053 |\\n| 40 | 0.051 |\\n| 60 | 0.052 |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature (°C) | Deposition rate (nm/cycle) |\\n|---|---|\\n| 30 | 0.061 |\\n| 100 | 0.054 |\\n| 150 | 0.053 |\\n| 200 | 0.053 |\\n| 250 | 0.053 |\\n| 300 | 0.053 |\\n| 350 | 0.052 |\\n| 400 | 0.053 |\"},{\"panel_id\":\"c\",\"text\":\"| Number of PEALD cycles | Film thickness (nm) |\\n|---|---|\\n| 50 | 3.0 |\\n| 150 | 8.0 |\\n| 300 | 16.0 |\\n| 500 | 26.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The deposition rate rises rapidly from about 0.02 nm per cycle at 2 s to about 0.05 nm per cycle by about 10 s, then stays near that level up to 60 s. Saturation begins at roughly 10 s.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The growth per cycle is approximately constant over the tested cycle counts.\\n\\nThere is no strong incubation delay in thickness accumulation over this range.\\n\\nThe process behaves in a self limiting manner consistent with ALD type growth.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The squares are measured deposition rate values at different substrate temperatures. The dashed line indicates the approximate constant growth per cycle within the ALD temperature window, about 0.53 Å per cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A broad temperature window with stable growth per cycle makes the process easier to transfer across tools and substrates because small temperature variations have limited impact on thickness control. It also enables deposition on temperature sensitive substrates by selecting a lower temperature while keeping similar thickness per cycle. In practice, this supports more predictable film thickness targeting across devices and wafer areas.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":548,"height":417},{"panel_id":"b","x":4,"y":424,"width":542,"height":419},{"panel_id":"c","x":0,"y":851,"width":547,"height":411}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/Donmez et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"63","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":550,"height":1266,"image_format":"jpeg","image_sha256":"3c23f5ec3c13d73347c70c566bfed5c5845d398f83040cb4bfaa5cf544dd39af","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_64_fig_2.jpg","caption":"FIG. 2. Growth rate of the platinum films grown from $\\mathrm{MeCpPtMe}_3$ as a function of the deposition temperature, the film thicknesses being measured by EDX and XRR. The $\\mathrm{MeCpPtMe}_3$ and oxygen pulse times were $0.7$ and $1.0\\mathrm{s}$ , respectively, and the purge period between the pulses was $0.7\\mathrm{s}$ .","id":"train/atomic-layer-deposition/experimental-usecase/64/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/64/fig_2","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the growth rate of platinum films deposited from MeCpPtMe₃ as a function of deposition temperature (200–300 °C). The film thicknesses were measured using EDX and XRR. The plot illustrates that the growth rate increases with temperature, from about 0.30 Å/cycle at 200 °C to 0.51 Å/cycle at 300 °C. Pulse and purge times for the precursor and oxygen were 0.7–1.0 s.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition temperature (°C) | Growth rate (Å cycle⁻¹) |\\n|---|---|\\n| 200 | 0.30 |\\n| 220 | 0.36 |\\n| 240 | 0.41 |\\n| 260 | 0.45 |\\n| 280 | 0.48 |\\n| 300 | 0.51 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Using pure oxygen instead of air allows deposition of platinum films at significantly lower temperatures. In previous work using air, no film was obtained below 300 °C, whereas with pure oxygen, films could be grown starting at 200 °C. The higher oxygen partial pressure is key to enabling film growth at these lower temperatures without affecting the maximum growth rate at 300 °C.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 300 °C.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The growth rate increases as the deposition temperature increases from 200 °C to 300 °C.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Deposition temperature (200–300 °C), Oxygen partial pressure (higher in current study compared to previous air-based study), Pulse times of MeCpPtMe₃ (0.7 s) and oxygen (1.0 s), Purge time between pulses (0.7 s)\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":528,"height":359}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/64/Aaltonen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"64","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":528,"height":359,"image_format":"jpeg","image_sha256":"78eed6a2552c212122e78187b5cdcd19473f4a4c14aae1902d89d19b9ab3a46b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_69_FIG1_a.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/69/FIG1_a","sample_id":"atomic-layer-deposition/experimental-usecase/69/FIG1_a","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A scatter plot showing the linear increase in thickness (in nm) as a function of ALD cycle number.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD Cycle (#) | Thickness (nm) |\\n|---|---|\\n| 0 | 0 |\\n| 20 | 2.5 |\\n| 40 | 5 |\\n| 60 | 7 |\\n| 80 | 9 |\\n| 100 | 11 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 9 nm.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"For both O2 plasma exposure steps, roughly 0.16 nm is removed.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the TDMAP and TMA exposure steps, material is deposited, roughly 0.20 and 0.24 nm, respectively. During O2-plasma exposure, material is removed, roughly 0.16 and 0.17 nm for the first and second exposure, respectively. This yields a net growth of 0.11 nm/cycle.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":673,"height":382}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG1_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG1_a.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/Ruben Blomme et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"69","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"not_found"},"width":703,"height":392,"image_format":"jpeg","image_sha256":"3e440481ef613a49314e31f8ac3cf4194a2ac140076c8a554fb17b03009458ec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_69_FIG5.jpg","caption":"FIG. 5. In situ ellipsometry data for the different combinations of precursors that were tested at $300^{\\circ}\\mathrm{C}$ . Depicted are the thicknesses obtained from the SE measurements conducted at the end of each full cycle.","id":"train/atomic-layer-deposition/experimental-usecase/69/FIG5","sample_id":"atomic-layer-deposition/experimental-usecase/69/FIG5","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the thickness of as a function of the number of ALD cycles for 5 different precursor combinations.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD Cycle (#) | Thickness (nm) TDMAP - TMA | Thickness (nm) TDMAP - O₂* | Thickness (nm) TDMAP - O₂* - TMA | Thickness (nm) TDMAP - TMA - O₂* | Thickness (nm) TDMAP - O₂* - TMA - O₂* |\\n|---|---|---|---|---|---|\\n| 0 | 0 | 0 | 0 | 0 | 0 |\\n| 20 | 0 | 2.0 | 2.0 | 2.0 | 3.5 |\\n| 40 | 0 | 2.0 | 4.0 | 4.0 | 6.0 |\\n| 60 | 0 | 2.0 | 6.0 | 6.0 | 8.0 |\\n| 80 | 0 | 2.0 | 7.0 | 7.0 | 10.0 |\\n| 100 | 0 | 2.0 | 8.0 | 8.0 | 12.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TP–O–TAl–O (TDMAP–O₂*–TMA–O₂*).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TP–O–TAl–O process yields a phosphorus content of approximately 11%, which is very similar to that obtained for the TP–TAl–O process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TP–TAl process shows no sustained growth beyond an initial thickness increase of about 0.37 nm after the first cycle, indicating very low reactivity without a coreactant.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TP–O (TDMAP–O₂*) process shows limited growth that saturates at a total film thickness of approximately 2 nm.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":4,"width":674,"height":450}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/Ruben Blomme et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"69","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":678,"height":456,"image_format":"jpeg","image_sha256":"bd145982728ec2d269e69b6df440afd9ad141a7374a762806439a0465648b2a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_69_FIG6_a.jpg","caption":"FIG. 7. In situ ellipsometry data of three processes with different AIO-PO ratios. As the contribution of PO increases, the overall growth of the material also increases.","id":"train/atomic-layer-deposition/experimental-usecase/69/FIG6_a","sample_id":"atomic-layer-deposition/experimental-usecase/69/FIG6_a","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot displays the ratio of oxygen to phosphorus (O/P) against various elements (Al, Ti, Ca, Li, Fe, La, Zn, Co, Na, Mg, V, Ni). The points are color-coded, and there's a horizontal dashed line indicating a specific value.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| M (Element) | TMP | TMP* | DEPA | DEPA* | TDMAP | This work |\\n|---|---|---|---|---|---|---|\\n| Al | 4.8 | 3.4 | | | | 5.6 |\\n| Ti | 3.9 | 2.6 | | 1.9 | | |\\n| Ca | 3.7 | 3.3 | | | | |\\n| Li | 3.8 | 2.2 | 2.4 | | | |\\n| Fe | 3.9 | 2.5 | | | | |\\n| La | 4.9 | | | | | |\\n| Zn | | 2.0 | | | | |\\n| Co | 4.5 | 2.9 | | | | |\\n| Na | | | 3.7 | | | |\\n| Mg | | | | | 3.2 | |\\n| V | | 3.4 | | | | |\\n| Ni | | 2.8 | | | | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The aluminum phosphate deposited in this work has a P/M ratio of 0.51 and an O/P ratio of 5.65, which deviates strongly from an ideal orthophosphate composition (P/M = 1 and O/P = 4), indicating phosphorus deficiency and oxygen excess.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The aluminum phosphate in this work shows a lower P/M ratio (0.51 vs 0.67) and a higher O/P ratio (5.65 vs 3.16) than the TDMAP-based magnesium phosphate, highlighting a substantial difference in phosphorus incorporation between the two systems.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The comparison demonstrates that both the phosphorous precursor and the metal precursor significantly influence the final film composition. In particular, the TDMAP-based aluminum phosphate deposited in this work exhibits an unusually low P/M ratio and a very high O/P ratio, placing it far from the stoichiometry of an orthophosphate. This behavior contrasts with TMP-, TMP*-, DEPA-, and DEPA*-based processes, which generally yield compositions closer to P/M = 1. The stark difference with the TDMAP-based magnesium phosphate further suggests that the metal precursor itself can dictate growth chemistry and ligand exchange efficiency in ALD, reinforcing that phosphorus incorporation is not solely controlled by the phosphorous precursor but emerges from the combined metal–phosphorus chemistry.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Processes based on TMP, TMP*, DEPA, and DEPA* generally show higher P/M ratios than TDMAP-based processes, indicating more efficient phosphorus incorporation.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":650,"height":423}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG6_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG6_a.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/Ruben Blomme et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"69","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":650,"height":423,"image_format":"jpeg","image_sha256":"cf6c54d202284429dd0ac51de342cf1b266b7fd49eab7dd3077b4f91abfee166","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_69_FIG7.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/69/FIG7","sample_id":"atomic-layer-deposition/experimental-usecase/69/FIG7","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the growth of thickness over ALD supercycles for different AIO-PO ratios.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD Supercycle (#) | Thickness (nm) AlO-PO (1-1) | Thickness (nm) AlO-PO (1-3) | Thickness (nm) AlO-PO (1-6) |\\n|---|---|---|---|\\n| 0 | 0 | 0 | 0 |\\n| 20 | 3 | 5 | 7 |\\n| 40 | 5 | 8 | 12 |\\n| 60 | 8 | 12 | 16 |\\n| 80 | 10 | 16 | 22 |\\n| 100 | 13 | 20 | 28 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 7 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 13 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Roughly 17 nm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 7 illustrates that splitting the original four-step process into separate TDMAP–O₂* and TMA–O₂* cycles and combining them in a supercycle provides a practical lever to control film composition and growth behavior. Increasing the number of TDMAP–O₂* cycles per supercycle (from 1 to 3 and 6, with one TMA–O₂* cycle fixed) systematically increases both the growth per supercycle and the phosphorus content of the deposited film. Unlike the standalone TP–O process, which saturates at a thickness of approximately 2 nm, the periodic insertion of a TMA–O₂* cycle effectively resets the surface chemistry, allowing continued chemisorption and further growth during subsequent TDMAP–O₂* cycles. As a result, the supercycle approach overcomes growth saturation while enabling tunable phosphorus incorporation, analogous to previously reported TMP-based supercycle strategies.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":672,"height":456}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/images/FIG7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/69/Ruben Blomme et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"69","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"not_found"},"width":672,"height":456,"image_format":"jpeg","image_sha256":"8c73efde7c9f7a1c19019166b8c31da91f6cc551c669baf7e46fce65365c8915","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_3.jpg","caption":"Figure 3. Process development steps of Eu-HQA thin films that show temperature scanning (left), surface saturation of precursors (middle), and thickness control over the number of ALD/MLD cycles (right). (Reproduced under CC licence from ref. [55], 2023, Royal society of chemistry).","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_3","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"multiple scatter plot"},{"panel_id":"c","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The graph shows the relationship between deposition temperature (Tdep) and GPC (Å/cycle). As the temperature increases, GPC decreases.\"},{\"panel_id\":\"b\",\"text\":\"The graph illustrates the impact of pulse length on GPC. Longer pulse lengths result in higher GPC values.\"},{\"panel_id\":\"c\",\"text\":\"The line chart demonstrates the increase in thickness with the number of cycles. There's a linear relationship indicating that more cycles lead to thicker layers.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Tdep (°C) | GPC (Å/cycle) |\\n|---|---|\\n| 210 | 6.8 |\\n| 220 | 6.5 |\\n| 230 | 6.0 |\\n| 240 | 5.5 |\"},{\"panel_id\":\"b\",\"text\":\"| Pulse length (s) | GPC (Å/cycle) |\\n|---|---|\\n| 1 | 5.7 |\\n| 2 | 6.5 |\\n| 3 | 7.0 |\\n| 4 | 7.2 |\\n| 5 | 7.3 |\"},{\"panel_id\":\"c\",\"text\":\"| Cycles | Thickness (nm) |\\n|---|---|\\n| 50 | 50 |\\n| 100 | 75 |\\n| 150 | 100 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The linear relationship between thickness and cycle number, passing through the origin, confirms self-limiting, layer-by-layer growth characteristic of ideal ALD/MLD processes.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both Eu-thd and HQA precursors reach saturation at approximately 3 seconds pulse length.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Blue points represent Eu-thd (europium tris-tetramethylheptanedionate) precursor saturation, and green points represent HQA (2-hydroxyquinoline-4-carboxylic acid) organic precursor saturation.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This decreasing GPC trend is typical for ALD/MLD processes involving organic precursors. At higher temperatures, organic molecules may partially desorb from the surface before reacting, or undergo thermal decomposition. Additionally, increased thermal energy can enhance desorption of physisorbed species, reducing the effective surface coverage per cycle.\"}]}]","bbox":[{"panel_id":"c","x":658,"y":0,"width":341,"height":688},{"panel_id":"b","x":332,"y":0,"width":326,"height":688},{"panel_id":"a","x":0,"y":0,"width":331,"height":694}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":1003,"height":689,"image_format":"jpeg","image_sha256":"7576d8f8bc10778c087e6e009b4ec436f752e2a9f4e87184681e0dbcfa8e1593","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_6.jpg","caption":"Figure 6. Growth rates of different $\\Upsilon_{2}\\bigcirc_{3}$ processes (left) with different Y-precursors and $\\mathsf{H}_2\\mathsf{O}$ as co-reactant, and (right) with different co-reactants and $\\Upsilon (^{(\\mathsf{IPr2}}\\mathsf{amd})(^{\\mathsf{Et}}\\mathsf{Cp})_2$ as Y-precursor.","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_6","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Comparison of GPC values across ten yttrium precursors with H₂O as co-reactant, showing Yᴱᵗ(Cp)₃ achieves the highest GPC (~1.7 Å) and Y(ᵗBu₂-Famd)₃ the lowest (~0.67 Å).\"},{\"panel_id\":\"b\",\"text\":\"Effect of five different co-reactants on GPC when using Y(ⁱPr₂amd)(ᴱᵗCp)₂ precursor, with O₃ giving the highest (~1.1 Å) and O₂ plasma the lowest (~0.83 Å).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| GPC (Å) | Compound Name |\\n| --- | --- |\\n| 0.75 | Y(iPr2-amd)3 |\\n| 0.85 | Y(Me)(Cp)3 |\\n| 1.00 | Y(Cp)3 |\\n| 1.10 | Y(iPr2-amd)(EtCp)2 |\\n| 1.20 | Y(Bu)(Cp)3 |\\n| 1.25 | Y(DPDMG)3 |\\n| 1.35 | Y(iPr2-amd)(iPrCp)2 |\\n| 1.45 | Y(iPr2-Famd)3 |\"},{\"panel_id\":\"b\",\"text\":\"| GPC (Å) | Gas Type |\\n| --- | --- |\\n| 0.75 | O2 plasma |\\n| 0.85 | H2O plasma |\\n| 0.95 | O3 |\\n| 1.05 | O2 |\\n| 1.15 | H2O |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ozone produces the highest GPC (~1.1 Å), followed by H₂O and H₂O plasma (~1.03–1.05 Å), then O₂ (~0.9 Å), with O₂ plasma yielding the lowest (~0.83 Å). This suggests that chemical reactivity of the oxidizer toward the precursor ligands, rather than plasma activation alone, primarily determines growth rate.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The y-axis represents growth-per-cycle (GPC) measured in angstroms (Å), indicating the film thickness deposited per ALD cycle.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yᴱᵗ(Cp)₃ achieves the highest GPC of approximately 1.7 Å.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Key factors include: (1) steric bulk of ligand substituents affecting surface packing; (2) ligand lability influencing reaction kinetics with H₂O; (3) molecular footprint controlling maximum surface coverage per cycle.\"}]}]","bbox":[{"panel_id":"b","x":583,"y":4,"width":580,"height":396},{"panel_id":"a","x":0,"y":2,"width":574,"height":393}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":1167,"height":400,"image_format":"jpeg","image_sha256":"b259f81d80fcc7b8644d5a9da60c8086aa7b9362ff7f505ca05a3ca3298f14bd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_37a3a22fa00063f75c2dfec274e4e445732ee1bc19ab810e090c416eadd5d937.jpg","caption":"Fig. B2 - Comparison between pressure readings by capacitance manometer and Pirani gauge.","id":"train/atomic-layer-deposition/simulation-usecase/32/37a3a22fa00063f75c2dfec274e4e445732ee1bc19ab810e090c416eadd5d937","sample_id":"atomic-layer-deposition/simulation-usecase/32/37a3a22fa00063f75c2dfec274e4e445732ee1bc19ab810e090c416eadd5d937","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot compares the capacitance and Pirani guage readings with Argon flow\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pirani Gauge (Torr) | Capacitance Manometer (Torr) |\\n|----------------------|------------------------------|\\n| 0.00 | 0.00 |\\n| 0.02 | 0.03 |\\n| 0.04 | 0.06 |\\n| 0.06 | 0.09 |\\n| 0.08 | 0.11 |\\n| 0.10 | 0.14 |\\n| 0.12 | 0.17 |\\n| 0.14 | 0.20 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The capacitance manometer readings measure pressure consistently with the Pirani gauge with respect to the argon flow\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The model predictions for the pressure to a value(Pconv) to be compared with the Pirani gauge measurements.Although the above assumption is not validated for H2O orTMA, experimental measurements show that it can be used for the Ar flow. However, only by using the same assumption for the reactants, as it is the only way to compare the outlet measurements with the model predictions\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A capacitance manometer is a highly accurate electronic gauge that measures pressure (especially vacuum) by detecting changes in electrical capacitance caused by the deflection of a thin diaphragm, converting this physical movement into a precise electrical signal, making it gas-independent and ideal for lab use\"}]}]","bbox":[{"panel_id":"a","x":4,"y":4,"width":1008,"height":647}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/37a3a22fa00063f75c2dfec274e4e445732ee1bc19ab810e090c416eadd5d937.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/37a3a22fa00063f75c2dfec274e4e445732ee1bc19ab810e090c416eadd5d937.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":1017,"height":656,"image_format":"jpeg","image_sha256":"c45015685cae00e243628d083121e3ad6b2920ebc99edc94ecd7cce76e3b0ab1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_4.jpg","caption":"Fig. 4 - Outlet pressure vs inlet Ar flow rate: model predictions (line) and experimental measurements (dots).","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_4","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart compares the experimental data and model prediction on the relationship between the inlet argon flow rate (in sccm) and the outlet pressure (in Torr). There is a linear increase in outlet pressure as the inlet argon flow rate increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Inlet Argon Flow Rate (sccm) | Outlet Pressure - Experiments (Torr) | Outlet Pressure - Model (Torr) |\\n|------------------------------|--------------------------------------|--------------------------------|\\n| 0 | 0.000 | 0.000 |\\n| 50 | 0.015 | 0.012 |\\n| 75 | 0.022 | 0.020 |\\n| 100 | 0.030 | 0.028 |\\n| 150 | 0.045 | 0.043 |\\n| 200 | 0.060 | 0.058 |\\n| 250 | 0.075 | 0.073 |\\n| 300 | 0.085 | 0.08 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The outlet pressure varied linearly with respect to inlet argon flow rate. As the argon flow rate increases, outlet pressure increases.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"in order to compare the predicted values, Pcalc,with the Pirani measurements, Pexp, the former is converted using the formula , Pconv = Pcalc ( kmixture/kNitrogen), which accounts for the dependence, assumed linear, of the pressure reading on the ratio of the thermal conductivities of the gas mixture and nitrogen\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"kmixture is the thermal conductivity of the gas mixture,kNitrogen is the thermal conductivity of nitrogen, Pcalc is the calculated pressure. Using the kinetic gas theory, the thermal conductivity of pure nitrogen at the outlet temperature, i.e270◦C, is estimated 0.041106 W/mK.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":1,"width":1004,"height":560}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":1012,"height":567,"image_format":"jpeg","image_sha256":"55e0b26b04d5b876fbcf3c24722474db7e1790970347edcd319e793d0ddc3601","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_35_fig_1.jpg","caption":"Fig. 1. Effect of $\\mathrm{AlMe}_3$ reaction temperature on the amount of aluminum adsorbed, $\\Delta c_{\\mathrm{Al}}$ , in the $\\mathrm{AlMe}_3$ reaction with alumina heat-treated at $560^{\\circ}\\mathrm{C}$ (adapted from reference [21]). Results up to reaction at $300^{\\circ}\\mathrm{C}$ are shown; above $300^{\\circ}\\mathrm{C}$ , $\\mathrm{AlMe}_3$ decomposes [21,29]. A line has been fitted to the experimental data; the confidence limits represent 1 standard deviation.","id":"train/atomic-layer-deposition/simulation-usecase/35/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/35/fig_1","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the amount of aluminum adsorbed (Δc_Al) as a function of AlMe₃ reaction temperature on alumina pretreated at 560°C. The fitted line (y = a + bx) yields a = 2.9 ± 0.1 nm⁻² and b = −0.0003 ± 0.0005, indicating that Δc_Al remains essentially constant (~2.9 nm⁻²) across the 80–300°C range, demonstrating temperature independence of aluminum adsorption in this regime.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| AlMe₃ reaction temperature [°C] | Δcₐ [nm²] |\\n|---|---|\\n| 100 | 2.9 ± 0.1 |\\n| 150 | 2.9 ± 0.1 |\\n| 200 | 2.9 ± 0.1 |\\n| 250 | 2.9 ± 0.1 |\\n| 300 | 2.9 ± 0.1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The fitted slope b = −0.0003 ± 0.0005 is statistically indistinguishable from zero, meaning Δc_Al remains constant at approximately 2.9 nm⁻² regardless of reaction temperature in this range.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Above 300°C, AlMe₃ undergoes thermal decomposition, which would introduce non-ALD growth mechanisms and invalidate the self-limiting surface reaction assumption.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The temperature independence indicates that the AlMe₃ chemisorption reaction is not kinetically limited within the 80–300°C window; rather, it proceeds to completion regardless of thermal energy input. This behavior is characteristic of self-terminating ALD reactions where surface site availability (OH groups) and steric hindrance by adsorbed methyl groups, not reaction kinetics, determine the saturation coverage. The constant Δc_Al value of ~2.9 nm⁻² therefore reflects a thermodynamically controlled endpoint defined by the fixed OH concentration on the 560°C pretreated alumina surface.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The y-axis shows Δc_Al, the surface concentration of aluminum atoms adsorbed per ALD cycle, expressed in units of nm⁻² (atoms per square nanometer).\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":403,"height":228}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/35/Riikka L. Puurunen.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":403,"height":228,"image_format":"jpeg","image_sha256":"74bfca2ba037653b9f6e6d42b2190db9052c22dba79e3fff710f7013362344b1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_38_figure_8.jpg","caption":"Figure 8. Hacac pressure contours across the wafer in (a) R1 at $2\\mathrm{s}$ and (b) R4 at $3\\mathrm{s}$ . The red region in (a,b) indicates the area that is covered with the reagent, Hacac. Distribution of exposure time for all nodes in the wafer for (c) R1 and (d) R4. $\\mu$ and $\\sigma$ represent the average and standard deviation, respectively. There are 10,410 nodes in R1 and 6737 nodes in R4.","id":"train/atomic-layer-deposition/simulation-usecase/38/figure_8","sample_id":"atomic-layer-deposition/simulation-usecase/38/figure_8","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"bar chart"},{"panel_id":"d","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Hacac partial pressure contour on wafers in reactor R1 at 2 s, showing coverage regions in red and illustrating spatial distribution of the reagent.\"},{\"panel_id\":\"b\",\"text\":\"Hacac partial pressure contour on wafers in reactor R4 at 3 s, showing coverage regions in red and illustrating spatial distribution of the reagent.\"},{\"panel_id\":\"c\",\"text\":\"Bar chart of Hacac exposure times for all wafer nodes in reactor R1, showing a broader distribution with average 2.717 s and standard deviation 0.1925 s.\"},{\"panel_id\":\"d\",\"text\":\"Bar chart of Hacac exposure times for all wafer nodes in reactor R4, showing a tightly centered distribution with average 2.701 s and standard deviation 0.0079 s.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| x-coordinate|y-coordinate|\\n|-------------|------------|\\n|0.1|-0.05|\\n|0.15|-0.1|\\n|0.2|-0.15|\\n|0.25|-0.2|\\n|0.3|-0.25|\"},{\"panel_id\":\"b\",\"text\":\"| x-coordinate|y-coordinate|\\n|-------------|------------|\\n|0.05|-0.1|\\n|0.1|-0.15|\\n|0.15|-0.2|\\n|0.2|-0.25|\\n|0.25|-0.3|\"},{\"panel_id\":\"c\",\"text\":\"| Exposure time (s)|Number of nodes|\\n|------------------|---------------|\\n|2.0|0|\\n|2.1|0|\\n|2.2|0|\\n|2.3|0|\\n|2.4|0|\\n|2.5|0|\\n|2.6|0|\\n|2.7|0|\\n|2.8|0|\\n|2.9|0|\\n|3.0|0|\\n|3.1|0|\\n|3.2|0|\\n|3.3|0|\\n|3.4|0|\\n|3.5|0|\\n|3.6|0|\\n|3.7|0|\\n|3.8|0|\\n|3.9|0|\\n|4.0|0|\"},{\"panel_id\":\"d\",\"text\":\"| Exposure time (s)|Number of nodes|\\n|------------------|---------------|\\n|2.0|0|\\n|2.1|0|\\n|2.2|0|\\n|2.3|0|\\n|2.4|0|\\n|2.5|0|\\n|2.6|0|\\n|2.7|0|\\n|2.8|0|\\n|2.9|0|\\n|3.0|0|\\n|3.1|0|\\n|3.2|0|\\n|3.3|0|\\n|3.4|0|\\n|3.5|0|\\n|3.6|0|\\n|3.7|0|\\n|3.8|0|\\n|3.9|0|\\n|4.0|0|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Reactor geometry (shape of reaction zones), Wafer rotation speed (angular velocity), Radial position of nodes on the wafer, Design of inlet and outlet configurations, Arc length of reaction zones relative to radial distance\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. R1 exhibits a wider exposure time distribution with higher standard deviation, whereas R4 has a tightly centered distribution with low variability, despite similar average exposure times.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Exposure time is determined by recording the Hacac partial pressure at every node of the wafer as it passes through the reaction zone. Each node is considered exposed as long as the pressure is above a threshold, and the total time in this state defines the exposure time. The wafer rotation and geometry of the reaction zones influence how long each node remains in contact with the reagent, which is then visualized as a distribution across all nodes.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"R1: Average exposure time = 2.717 s, Standard deviation = 0.1925 s\\nR4: Average exposure time = 2.701 s, Standard deviation = 0.0079 s\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":538,"height":388},{"panel_id":"b","x":557,"y":0,"width":532,"height":388},{"panel_id":"c","x":0,"y":481,"width":498,"height":389},{"panel_id":"d","x":557,"y":481,"width":500,"height":357}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/38/Sungil Yun et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":1089,"height":908,"image_format":"jpeg","image_sha256":"7f3c849e07f505efb0cad2eed2b8bdf45e16f04d6290851f9009f7d2161ba9ca","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_11_figure_2.jpg","caption":"Figure 2. $\\mathrm{ZnO}$ thickness evolution as a function of the number of cycles for (a) sequence 1: Hacac and $\\mathrm{O}_2$ gas (circles); (b) sequence 2: Hacac and $\\mathrm{O}_2$ plasma (squares); and (c) sequence 3: only $\\mathrm{O}_2$ plasma pulses (diamonds). Significant $\\mathrm{ZnO}$ thickness decrease was observed only for sequence 2. All of the experiments were carried out at a temperature of $250^{\\circ}C$","id":"train/atomic-layer-etching/experimental-usecase/11/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/11/figure_2","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The ZnO thickness remains constant at approximately 585 Å for Hacac + O₂ gas and O₂ plasma treatments, while it decreases linearly for Hacac + O₂ plasma treatment.\"},{\"panel_id\":\"b\",\"text\":\"The ZnO thickness decreases linearly with increasing number of cycles for Hacac + O₂ plasma treatment.\"},{\"panel_id\":\"c\",\"text\":\"The ZnO thickness remains constant at approximately 585 Å for O₂ plasma treatment.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of cycles | Hacac + O₂ gas |\\n|------------------|----------------|\\n| 0 | 584 | \\n| 10 | 585 | \\n| 20 | 585 | \\n| 30 | 585 | \\n| 40 | 585 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of cycles | Hacac + O₂ plasma |\\n|------------------|--------------------|\\n| 0 | 585 |\\n| 10 | 572 |\\n| 20 | 560 |\\n| 30 | 550 |\\n| 40 | 530 |\"},{\"panel_id\":\"c\",\"text\":\"| Number of cycles | O₂ plasma |\\n|------------------|-----------|\\n| 0 | 585 |\\n| 10 | 585 |\\n| 20 | 585 |\\n| 30 | 585 |\\n| 40 | 585 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"From the figure, image b when Hacac and O2 plasma are exposed sequentially, we observe actual etching taking place as the thickness decreases.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Hacac\\n, 2. O2 gas\\n, 3. O2 plasma.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Upon exposure to Hacac an apparent thickness increase of ∼2 Å was detected after the first 10 cycles, whereas the thickness decreases slightly afterward. This apparent thickness increase can be attributed to the adsorption of Hacac molecules onto the ZnO surface, similarly to what has been observed on Al2O3 substrates for the ABC-type area-selective ALD of SiO2. The subsequent thickness decrease might be due to partial decomposition of acac species on the ZnO surface . Note that the measured thickness does not decrease below the starting ZnO thickness during sequence 1.\"}]}]","bbox":[{"panel_id":"c","x":366,"y":11,"width":139,"height":355},{"panel_id":"b","x":223,"y":13,"width":133,"height":359},{"panel_id":"a","x":71,"y":11,"width":135,"height":363}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plasma.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":506,"height":403,"image_format":"jpeg","image_sha256":"eef0cb05047163a5f0bb13e029928058d5b43a3889b68f281974d3c052da4083","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_11_figure_3.jpg","caption":"Figure 3. (a) EPC as a function of the Hacac exposure time for a fixed $\\mathrm{O}_2$ plasma step of $5\\mathrm{s}$ . Saturation (self-limiting behavior) was reached for a total Hacac exposure of $27\\mathrm{s}$ , resulting in an EPC of $1.31\\mathrm{\\AA / cycle}$ . (b) EPC as a function of the $\\mathrm{O}_2$ plasma exposure time for a fixed Hacac dose of $27\\mathrm{s}$ . A saturated EPC value was measured for all the investigated $\\mathrm{O}_2$ plasma exposure times $(\\geq 2\\mathrm{s})$ . The processing temperature was $250^{\\circ}\\mathrm{C}$ . The dashed lines serve as a guide to the eye.","id":"train/atomic-layer-etching/experimental-usecase/11/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/11/figure_3","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between Hacac exposure time and EPC (Å/cycle). Saturation achieved after 20 s\"},{\"panel_id\":\"b\",\"text\":\"The line chart illustrates the impact of O₂ plasma exposure time on EPC (Å/cycle). Saturation achieved after 3s.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Hacac Exposure (s) | EPC (Å/cycle) |\\n|---------------------|---------------|\\n| 0 | 0.0 |\\n| 5 | 0.4 |\\n| 10 | 0.8 |\\n| 15 | 1.0 |\\n| 20 | 1.2 |\\n| 30 | 1.3 |\\n| 40 | 1.4 |\"},{\"panel_id\":\"b\",\"text\":\"| O₂ Plasma Exposure (s) | EPC (Å/cycle) |\\n|-------------------------|---------------|\\n| 0 | 0.0 |\\n| 1 | 1.2 |\\n| 2 | 1.3 |\\n| 4 | 1.3 |\\n| 6 | 1.3 |\\n| 8 | 1.3 |\\n| 10 | 1.3 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Hacac exposure was observed to saturate at a value of 1.31 ± 0.08 Å for a total Hacac exposure time of 27 s\\n2. O2 plasma exposure time shows saturation already after 2 s at EPC of 1.31 Å/cycle\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"By observing the saturation curves, as the process saturates with respect to the Hacac and O2 plasma exposure, the ALE rate will remain the same irrespective of longer duration indicating the process has hit its reactive limit, therefore the images depict the self-limiting behaviour.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The processing temperature was 250 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"b","x":459,"y":3,"width":365,"height":303},{"panel_id":"a","x":8,"y":6,"width":427,"height":308}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plasma.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":841,"height":352,"image_format":"jpeg","image_sha256":"1d4e3ded5c3e55a171309cab58c75059e3ad8480514d147748f3615cd5cf2c45","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_13_figure_5.jpg","caption":"Figure 5. Etch depth versus number of etching cycles.","id":"train/atomic-layer-etching/experimental-usecase/13/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/13/figure_5","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between the number of cycles and etch depth. As the number of cycles increases, the etch depth also increases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of cycles | Etch depth [nm] |\\n|---|---|\\n| 0 | 0 |\\n| 5 | 3 |\\n| 7 | 5 |\\n| 16 | 11 |\\n| 24 | 17 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"5 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"11 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"17 nm.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":6,"width":579,"height":445}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/Low-Damage and Self-Limiting (Al)GaN Etching Process.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":583,"height":450,"image_format":"jpeg","image_sha256":"e0505b85e5d8bb12c0bbeba848cabc4aaa1ff00cbda800da52f38a4676235f15","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_17_figure_4.jpg","caption":"Figure 4. Mass change per cycle (MCPC) showing the self-limiting nature of the $\\mathrm{SF}_4$ and $\\mathrm{Sn(acac)}_2$ reactions during $\\mathrm{Al}_2\\mathrm{O}_3$ ALE at 200 $^\\circ \\mathrm{C}$ . (a) $\\mathrm{SF}_4$ exposure time, $X_{r}$ is varied as the $\\mathrm{Sn(acac)}_2$ exposure time is held constant at $2.5\\mathrm{s}$ . (b) $\\mathrm{Sn(acac)}_2$ exposure time, $X_{r}$ is varied as the $\\mathrm{SF}_4$ exposure time is held constant at $2.5\\mathrm{s}$ . Purge times after each reactant exposure are $55\\mathrm{s}$ .","id":"train/atomic-layer-etching/experimental-usecase/17/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/17/figure_4","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This dual-panel figure illustrates how MCPC (mass change per cycle) varies with precursor exposure time for both SF₄ and Sn(acac)₂ in the Al₂O₃ ALE process. In both cases, the MCPC decreases rapidly with increasing exposure time and asymptotically approaches a saturation point, indicating that each half-reaction becomes self-limiting beyond a certain exposure threshold. These saturation behaviors confirm that both precursors operate via self-limiting surface chemistry, a defining feature of atomic layer etching processes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| SF₄ Exposure Time (s) | MCPC (ng/cm²) |\\n|------------------------|----------------|\\n| 0 | 3.8 |\\n| 0.5 | 2.1 |\\n| 1 | 1.1 |\\n| 2 | 0.7 |\\n| 3 | 0.5 |\"},{\"panel_id\":\"b\",\"text\":\"| Sn(acac)₂ Exposure Time (s) | MCPC (ng/cm²) |\\n|-----------------------------|----------------|\\n| 0 | 3.6 |\\n| 0.5 | 2.3 |\\n| 1 | 1.2 |\\n| 2 | 0.6 |\\n| 3 | 0.4 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"SF₄.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The decreasing trends in MCPC for both SF₄ and Sn(acac)₂ exposures show that each precursor reaction is self-limiting, a hallmark of ALE chemistry. Initially, as exposure time increases, there is a sharp drop in MCPC due to rapid surface reactions. However, beyond ~2 seconds, additional exposure yields diminishing returns, indicating saturation of available reactive sites. This suggests that both the fluorination and ligand-exchange steps are well-controlled and reach completion under sufficient exposure durations, enabling precise layer-by-layer material removal.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Self-limiting reaction, efficient early-stage removal, surface saturation by ~2–3 s, stable MCPC plateau for repeatability\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":669,"height":474},{"panel_id":"b","x":4,"y":484,"width":664,"height":478}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/17/SF4 as the Fluorination Reactant for Al2O3 and VO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":672,"height":964,"image_format":"jpeg","image_sha256":"7825a92902e1dc15869af58b329d4aa442aabe19b53803ece7b81fb3a2c8bb1e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_22_e491b4d038fdd578fa1d521ec6367993f5d8e0ca7e5b91f94752170244c6b21d.jpg","caption":"","id":"train/atomic-layer-etching/experimental-usecase/22/e491b4d038fdd578fa1d521ec6367993f5d8e0ca7e5b91f94752170244c6b21d","sample_id":"atomic-layer-etching/experimental-usecase/22/e491b4d038fdd578fa1d521ec6367993f5d8e0ca7e5b91f94752170244c6b21d","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Panel (a) shows the mass loss (ng/cm²) of material as a function of MoF₆ dose duration, revealing rapid initial etching followed by saturation beyond ~1 second.\"},{\"panel_id\":\"b\",\"text\":\"Panel (b) plots mass loss against H₂O dose time, similarly showing an initial sharp increase that levels off near 4 seconds. The graphs indicate self-limiting behaviour characteristic of atomic layer etching (ALE), where further dosing does not result in additional material removal beyond a certain threshold.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| MoF₆ dose (s) | Mass Loss (ng/cm²) |\\n|---|---|\\n| 0.0 | 0.0 |\\n| 0.5 | 16.0 |\\n| 1.0 | 18.0 |\\n| 1.5 | 18.0 |\\n| 2.0 | 18.0 |\\n| 2.5 | 18.0 |\\n| 3.0 | 18.0 |\"},{\"panel_id\":\"b\",\"text\":\"| H₂O dose (s) | Mass Loss (ng/cm²) |\\n|---|---|\\n| 0.0 | 0.0 |\\n| 0.5 | 9.0 |\\n| 1.0 | 16.0 |\\n| 2.0 | 19.0 |\\n| 3.0 | 22.0 |\\n| 4.0 | 22.0 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"MoF₆: Mass loss quickly reaches saturation around 0.5–1.0 s, H₂O: Mass loss increases over a wider dose range, saturating near 3–4 s.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They exhibit self-limiting behaviour, indicating atomic layer etching (ALE) characteristics\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The data show that MoF₆ achieves most of its etching effect within the first second, after which further increases in dose do not increase mass loss. This suggests a surface-limited reaction where all available reactive sites are quickly consumed. In contrast, H₂O dosing results in a more gradual increase in mass loss, reaching a plateau around 4 seconds. This indicates that the removal step may depend on the availability of MoF₆-reacted surface species and the diffusion/reactivity of H₂O, making it the rate-limiting factor in the overall ALE cycle.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":507,"height":394},{"panel_id":"b","x":0,"y":398,"width":502,"height":396}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/e491b4d038fdd578fa1d521ec6367993f5d8e0ca7e5b91f94752170244c6b21d.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/images/e491b4d038fdd578fa1d521ec6367993f5d8e0ca7e5b91f94752170244c6b21d.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/22/Thermal Atomic Layer Etching of MoS2 Using MoF6 and H2O.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"not_found"},"width":506,"height":800,"image_format":"jpeg","image_sha256":"9c21ae02a40bfa3e8c2fd41a3898e76c4d48bc310ed6d9d83c714da666003cee","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_29_fig_2.jpg","caption":"FiG. 2. EPC of ALE for the AlGaN film as a function of Ar plasma exposure time in the removal step with a self-bias voltage of $45~\\mathrm{V}$ .","id":"train/atomic-layer-etching/experimental-usecase/29/fig_2","sample_id":"atomic-layer-etching/experimental-usecase/29/fig_2","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between Ar plasma exposure time and etch depth per cycle. As the exposure time increases, the etch depth also increases, till it soft-saturates.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ar Plasma Exposure Time (s) | Etch Depth per Cycle (nm) |\\n|---|---|\\n| 0 | 0 |\\n|10|0.3|\\n| 25 | 0.43 |\\n|30|0.55|\\n| 50 | 0.5 |\\n| 100 | 0.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etching is probably induced by the ion influence from the plasma. If there is no plasma, there is also no etching.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With ALE only the modified layer is selectively etched. It seems that the modification depth is roughly 0.5 nm, so there is soft-saturation at this level.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No there is no such benefit, saturation means that there is no more significant increase.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Plasma pressure, with high pressures, there are usually less energetic ions bombarding the substrate, whereas low-pressure plasmas do show this.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":3,"width":533,"height":460}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/images/fig_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/29/Atomic layer etching of AlGaN using Cl2 and Ar gas.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":536,"height":464,"image_format":"jpeg","image_sha256":"aac5e9311a01a29cb3df5c5509a3d2e65b598aac45acf77e4f48cd7b6e07f888","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_30_fig_1.jpg","caption":"Fig. 1. EPC of GaN as a function of bias voltage for a fixed Ar step time of $5\\mathrm{s}$ .","id":"train/atomic-layer-etching/experimental-usecase/30/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/30/fig_1","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows GaN etch per cycle (EPC) versus bias voltage for an Ar removal step time of 5 s. EPC increases at low bias, is nearly constant around 0.4 nm from about 50 to 100 V (self limited ALE window), and rises strongly above about 100 V.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Bias Voltage [V] | EPC [nm] |\\n|----------------|---------|\\n| 0 | 0.0 |\\n| 50 | 0.3 |\\n| 100 | 0.4 |\\n| 150 | 1.1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The x axis is bias voltage in V, and the y axis is EPC in nm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALE window is about 50 to 100 V. In this region EPC is almost constant at about 0.4 nm, consistent with a self limited removal per cycle rather than steadily increasing sputter yield.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It suggests a transition toward physical sputtering, where ion energy exceeds the sputtering threshold for GaN. In that regime, EPC rises with increasing bias because removal is no longer limited mainly by the prior chlorination step.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ion energy is insufficient to fully remove the chlorinated, modified surface layer each cycle.\\n\\nSome modified species remain, so net removal per cycle stays low until bias is increased into the self limited regime.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":7,"width":598,"height":386}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/30/Atomic layer etching of GaN and AlGaN.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":603,"height":395,"image_format":"jpeg","image_sha256":"c1b3c0271e04ea25c2cafacef1320ebb00e3d0b6ff3917a3d37b1552ac799ca0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_32_figure_3.jpg","caption":"Figure 3. InGaAs etch depth measured as a function of (a) first grid voltage (acceleration grid voltage) of the ICP ion gun for chlorine species (ions/radicals) exposure time of $15\\mathrm{min}$ and (b) the chlorine adsorption time for the first grid voltages of $+10$ and $+15\\mathrm{V}$ during the chlorine adsorption step. The other conditions are the same as those in figure 2.","id":"train/atomic-layer-etching/experimental-usecase/32/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/32/figure_3","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Line chart showing InGaAs etch depth as a function of acceleration grid voltage for a fixed Cl species exposure time of 15 min. Etching is negligible below 10 V and increases sharply between 15 and 30 V, indicating a threshold-like voltage dependence.\"},{\"panel_id\":\"b\",\"text\":\"Multiple line chart showing InGaAs etch depth as a function of Cl species exposure time at acceleration voltages of 15 V and 10 V. Etching proceeds more rapidly at 15 V, while the 10 V condition shows a delayed onset and substantially lower etch depth over the same time range.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Acceleration Voltage (V) | Etch Depth (Å) |\\n|---|---|\\n| 0 | 0 |\\n| 5 | 0 |\\n| 10 | 0 |\\n| 15 | ~45 |\\n| 20 | ~75 |\\n| 30 | ~150 |\"},{\"panel_id\":\"b\",\"text\":\"| Exposure Time (min) | 15V Etch Depth (Å) | 10V Etch Depth (Å) | \\n|---|---|---| \\n| 0 | 0 | 0 | \\n| 5 | 0 | 0 | \\n| 10 | 0 | 0 | \\n| 15 | ~5 | 0 | \\n| 25 | ~20 | ~5 | \\n| 35 | ~65 | ~15 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After ~10–15 min, 15 V increases much faster, reaching ~60–70 Å by ~35 min, while 10 V rises slowly to only ~10–20 Å by ~35 min. This indicates a strong voltage/ion-energy dependence of the etch step.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"15 V.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"15 min.\"}]}]","bbox":[{"panel_id":"b","x":6,"y":545,"width":658,"height":527},{"panel_id":"a","x":2,"y":1,"width":662,"height":526}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/Atomic layer etching of InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":667,"height":1075,"image_format":"jpeg","image_sha256":"db23ff27671621577ed208467a5e144d1f45ce41359de9ca1d073be5ac563ede","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_32_figure_4.jpg","caption":"Figure 4. Sputter etch depth of InGaAs itself during the $\\mathrm{Ar^{+}}$ ion gun operation as a function of (a) different first grid voltages for the $\\mathrm{Ar^{+}}$ ion exposure time of 50 s/cycle and (b) $\\mathrm{Ar^{+}}$ ion exposure time for the first grid voltages of $+10$ and $+30\\mathrm{V}$ . The sputtering was cyclic processed for 100 cycles without adsorption of chlorine during the chlorine adsorption step. The power of the ICP ion gun for the $\\mathrm{Ar^{+}}$ ion was maintained at $200\\mathrm{W}$ at the process chamber pressure of $3.0\\mathrm{mTorr}$ Ar. The second grid voltage to the ICP ion gun was maintained at $-100\\mathrm{V}$ for a directional ion beam while the third grid voltage was grounded.","id":"train/atomic-layer-etching/experimental-usecase/32/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/32/figure_4","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Scatter plot of Ar⁺ sputter etch depth vs acceleration grid voltage (50 s/cycle × 100 cycles). Etching is negligible up to 10 V, becomes measurable by ~30 V, and increases sharply by 50 V, indicating a strong voltage/ion-energy dependence.\"},{\"panel_id\":\"b\",\"text\":\"Multiple scatter plot showing InGaAs etch depth as a function of Ar⁺ ion exposure time at acceleration grid voltages of 10 V and 30 V. The 30 V condition produces substantially higher etch depths over the same exposure times, indicating a strong dependence of sputter yield on ion energy.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Acceleration Grid Voltage (V) | Etch Depth (Å) |\\n|---|---|\\n| 0 | 0 |\\n| 10 | 0 |\\n| 30 | ~10 |\\n| 50 | ~60 |\"},{\"panel_id\":\"b\",\"text\":\"| Ar+ Ion Exposure Time (sec) | 30V Etch Depth (Å) | 10V Etch Depth (Å) | \\n|---|---|---| \\n| 0 | 0 | 0 | \\n| 50 | ~20 | 0 | \\n| 100 | ~95 | 0 | \\n| 150 | ~210 | ~75 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Etch depth increases non-linearly with exposure time for both, but 30 V increases much faster (≈20 → 95 → 210 Å) while 10 V stays ~0 up to 100 s and only rises by 150 s (~75 Å). This implies sputtering is strongly ion-energy dependent; at lower voltage there’s an effective “low-yield” regime over much of the time range.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 30 V.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50 s/cycle × 100 cycles.\"}]}]","bbox":[{"panel_id":"b","x":4,"y":524,"width":653,"height":467},{"panel_id":"a","x":0,"y":0,"width":660,"height":513}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/32/Atomic layer etching of InGaAs.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":661,"height":994,"image_format":"jpeg","image_sha256":"fc6eb0908efcbf69b8ce10b29aff9a348ccf44188b35b627d5c0007ac0e62b00","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_33_fig_4.jpg","caption":"FIG. 4. EPC of the TiN films as a function of the radical exposure time. The dashed line is provided as a guide to the eye only.","id":"train/atomic-layer-etching/experimental-usecase/33/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/33/fig_4","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between Radical Exposure Time (in seconds) and EPC (in nm/cycle). There is a positive correlation where EPC increases as the Radical Exposure Time increases, but form as saturation is observed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Radical Exposure Time (s) | EPC (nm/cycle) |\\n|---|---|\\n| 0 | 0 |\\n| 10 | 0.9 |\\n| 30 | 0.6|\\n| 50 | 1.2 |\\n| 60 | 2.8 |\\n| 120 | 3 |\\n| 240 | 3.3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems as if the EPC is soft-saturated, meaning that additional radical exposure time after 250 s will still increase the EPC.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, there is mostly overlap for longer exposure times. The shorter exposure times shows less overlap.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Somewhere between 50 and 100 of radical exposure time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3.4 nm/cycle.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":1,"width":673,"height":534}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/Atomic layer etching of titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":669,"height":556,"image_format":"jpeg","image_sha256":"072141a5663eb4ac2d7a9decfef3d37409acf772c6bd9a038ad28b2174472489","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_33_fig_6.jpg","caption":"FIG. 6. Etching amount of TiN films as a function of the number of ALE cycles. The radical exposure time and IR annealing time were set at 60 and $30~\\mathrm{s}$ , respectively. The dashed line on the plot was obtained from least squares fitting to the data points.","id":"train/atomic-layer-etching/experimental-usecase/33/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/33/fig_6","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows a positive linear relationship between the number of cycles and etching amount, indicating that the etching amount increases proportionally with the number of cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cycles | Etching Amount (nm) |\\n|-----------------|--------------------|\\n| 0 | 0 |\\n| 2 | 3 |\\n| 4 | 10 |\\n| 6 | 12 |\\n| 8 | 17 |\\n| 10 | 19 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There is no delay in the beginning or enhanced etching indicating that there is nbo starting effect.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The EPC can be determined by calculating the slope of the linear fit through the data points.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The EPC is 1.9 nm/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 5 cycles.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":667,"height":598}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/Atomic layer etching of titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":669,"height":603,"image_format":"jpeg","image_sha256":"aec139ef67325da47105d391e8ce8f0248b4f9b6770728ad5f7a1eb8c22a9e36","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_34_fig_1.jpg","caption":"FIG. 1. Etching rate of $\\mathrm{CF_4}$ dry etching for $\\mathrm{Al}_2\\mathrm{O}_3$ films at various $\\mathrm{CF_4}$ plasma pressures.","id":"train/atomic-layer-etching/experimental-usecase/34/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/34/fig_1","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a scatter plot showing how the etching rate of Al₂O₃ during CF₄ dry etching varies with working pressure. The data reveal a steep decline in etching rate as pressure increases from a high rate at near-zero pressure to almost negligible etching above ~1 Torr indicating strong pressure-dependent suppression of etching efficiency.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Working pressure (Torr)|Etching rate (nm/min)|\\n|------------------------|---------------------|\\n|0.0|4.5|\\n|0.2|2.8|\\n|0.3|1.1|\\n|0.6|0.3|\\n|1.0|0.5|\\n|1.4|0.2|\\n|2.0|0.2|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding the pressure dependence is essential because it allows engineers to precisely control the etching process for high selectivity and accuracy. Lower pressures provide higher etching efficiency, useful for rapid material removal, while higher pressures reduce etching, enabling self-limiting or low-damage processing. This knowledge helps optimize process windows for applications such as device patterning, surface preparation, and atomic layer etching, ensuring high-quality results and consistency across wafers.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 0 Torr, the etching rate is approximately 4.5 nm/min, while at 2 Torr, it decreases to about 0.2 nm/min.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Reduced mean free path of reactive species, Increased collision frequency in the plasma, Lower energy of reactive ions reaching the surface, Decreased dissociation efficiency of CF₄ at higher pressure\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":666,"height":506}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/CF4 plasma-based atomic layer etching of Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":666,"height":506,"image_format":"jpeg","image_sha256":"a544a73ab1cc9aa0aa9082112e164a1d4746673aaaeb772605cb63f8ff8d37f5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_34_fig_5.jpg","caption":"FIG. 5. Saturation curve of the $\\mathrm{CF}_4$ plasma dosage.","id":"train/atomic-layer-etching/experimental-usecase/34/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/34/fig_5","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a saturation curve showing how the etching-per-cycle rate increases sharply during the initial seconds of CF₄ plasma treatment and then gradually plateaus as the exposure time reaches 20 seconds. This indicates a self-limiting etching behavior characteristic of atomic layer processes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| CF4 plasma treatment (s)|Etching per cycle (nm)|\\n|-------------------------|----------------------|\\n|0|0.00|\\n|5|0.20|\\n|10|0.25|\\n|20|0.24|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding saturation helps ensure precise, self-limiting etching in ALE processes. By identifying the plasma dose at which etching stops increasing (~10 s), operators can optimize process time, reduce energy consumption, and avoid overexposure that may damage substrates. This allows tight control of etch depth and improves film uniformity and reproducibility in nanofabrication.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 5 s, the etching is ~0.20 nm/cycle;\\nat 10 s, it rises to ~0.25 nm/cycle;\\nat 20 s, it remains approximately unchanged (~0.24 nm/cycle), showing saturation.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Higher plasma dosage activates more reactive fluorine species, Increased activation enhances etching-per-cycle at lower times, Beyond ~10 s, all reactive sites saturate, As a result, etching-per-cycle plateaus.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":511}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/CF4 plasma-based atomic layer etching of Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":675,"height":511,"image_format":"jpeg","image_sha256":"17d2c7c5e0054bc5d0f4703fbdfc08db569fb5987defb9a02e73fa2c13366d6e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_34_fig_6.jpg","caption":"FIG. 6. Saturation curve of the DMAC dosage.","id":"train/atomic-layer-etching/experimental-usecase/34/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/34/fig_6","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows etching per cycle as a function of DMAC pulse time: etching increases rapidly at short pulse times and then approaches a plateau (~0.23–0.25 nm per cycle) beyond about 1 s, indicating saturation of the DMAC dosage.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| DMAC pulse time (s)|Etching per cycle (nm)|\\n|--------------------|----------------------|\\n|0.0|0.00|\\n|0.2|0.15|\\n|0.5|0.16|\\n|1.0|0.25|\\n|2.0|0.23|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plateau indicates that after approximately 1 second of DMAC pulsing, the etching process reaches its maximum efficiency, meaning the surface becomes fully saturated and additional pulse time does not significantly enhance etching. This helps identify the optimal processing window where the reaction is both time-efficient and stable, avoiding unnecessary overexposure of DMAC.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The etching increases quickly at short pulse times but remains nearly constant at around 0.23–0.25 nm/cycle at longer times.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Self-limiting reaction behavior, Saturation of available reactive sites, Limited additional etching even with longer DMAC exposure\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":669,"height":500}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/34/CF4 plasma-based atomic layer etching of Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":669,"height":500,"image_format":"jpeg","image_sha256":"9c4ac08943d54a961cd43ca1654ab85ca51ed08f6e637d522befcd3ac7d03292","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig1.jpg","caption":"Fig.1. Etched amount of the blanket $\\mathrm{TiO_2}$ as a function of the $\\mathrm{CF_4}$ plasma treatment time (30 and 60 s).","id":"train/atomic-layer-etching/experimental-usecase/36/fig1","sample_id":"atomic-layer-etching/experimental-usecase/36/fig1","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between plasma treatment time (s) and the etched amount (nm), indicating a linear increase.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| plasma treatment (s) | etched amount (nm) |\\n|---|---|\\n| 0 | 0 |\\n| 15 | 2.58 |\\n| 30 | 6.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The error bar spans nearly 1 nm or a 6.6 nm measurement. It is a non-negligible variation. This suggests that it might be difficult to precisely control the process at the angstrom level often required for device manufacturing.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is not self-limiting. The linearity indicates this is a continuous etching process, where the amount removed is directly proportional to time. Self-limiting process would show a plateau after a certain time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It stays roughly constant over time.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":2,"width":597,"height":510}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig1.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":608,"height":514,"image_format":"jpeg","image_sha256":"591da360b646f6cdf507c6630eab0c2a38123045a8b66bfcb19c1aac97b8474a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_4.jpg","caption":"Fig. 4. Cyclic number dependence of the amount of blanket $\\mathrm{TiO_2}$ etching with cyclic $\\mathrm{C_4F_8}$ and $\\mathrm{O_2}$ plasma.","id":"train/atomic-layer-etching/experimental-usecase/36/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_4","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows a linear relationship between the number of cycles and the amount of blanket TiO2 etched (in nm), indicating a consistent increase with each cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of cycles | blanket TiO2 etched amount (nm) |\\n|---|---|\\n| 0 | 0 |\\n| 1 | 0.69 |\\n| 4 | 2.89 |\\n| 8 | 5.66 |\\n| 12 | 8.65 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Accumulated process variations.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approx. 0.71 nm/cycle.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It stays at approximately the same speed.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":3,"width":669,"height":445}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":450,"image_format":"jpeg","image_sha256":"a2787eebb6ec5273de9e07707ac89bef8be4e24b4183edb22bb11bd4f793e670","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_5.jpg","caption":"Fig. 5. CF polymer thickness on the blanket $\\mathrm{TiO_2}$ film for different $\\mathrm{C_4F_8}$ plasma treatment times.","id":"train/atomic-layer-etching/experimental-usecase/36/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_5","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between the duration of C₄F₈ plasma treatment (in s) and the thickness of the CF polymer formed (in nm), indicating a linear relationship between them.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| C₄F₈ plasma treatment time (s) | Thickness of CF polymer (nm) |\\n|---|---|\\n| 0 | 0 |\\n| 10 | 3.53 |\\n| 30 | 13.11 |\\n| 60 | 26.91 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It stays roughly constant.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"30 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The approximate deposition rate is 0.46 nm/s (based on the slope).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, it is not. If the process were self-limiting, the graph would rise and then plateau, once the surface is fully covered. The plot shows a linear increase, meaning the polymer continues to grow thicker and thicker indefinitely as long as the plasma is applied.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":4,"width":668,"height":445}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":452,"image_format":"jpeg","image_sha256":"8518c9801fabbe0cdf5dba12c68b8114acc2d300ba4926bd746f7bb6fb23dfd3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_40_fig_3.jpg","caption":"FIG. 3. (a) TiN ALE etch per cycle (EPC) vs substrate table temperature. (b) EPC vs $\\Omega_2$ gas exposure time with in situ HF exposure time fixed at $10s$ at $300^{\\circ}C$ c) EPC vs in situ HF time with $\\Omega_2$ exposure time fixed at $2s$ at $300^{\\circ}C$ The etch rates are observed to saturate with exposure time, demonstrating the self-limiting nature of the ALE process. The dashed lines are guides to the eye.","id":"train/atomic-layer-etching/experimental-usecase/40/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/40/fig_3","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch rate increases with increasing temperature.\"},{\"panel_id\":\"b\",\"text\":\"The etch rate increases with oxygen exposure time up to 2 seconds, then plateaus.\"},{\"panel_id\":\"c\",\"text\":\"The etch rate increases with in-situ HF exposure time up to 15 seconds, then plateaus\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Etch rate (Å/cycle) |\\n|---|---|\\n| 150 | 1.10 |\\n| 175 | 1.90 |\\n| 200 | 2.45 |\\n| 250 | 3.10 |\\n| 300 | 3.30 |\\n| 350 | 3.28 |\"},{\"panel_id\":\"b\",\"text\":\"| Oxygen exposure time (s) | Etch rate (Å/cycle) |\\n|---|---|\\n| 0.0 | 0.10 |\\n| 0.5 | 1.65 |\\n| 1.0 | 2.40 |\\n| 2.0 | 2.95 |\\n| 4.0 | 2.95 |\\n| 6.0 | 2.92 |\"},{\"panel_id\":\"c\",\"text\":\"| In-situ HF exposure time (s) | Etch rate (Å/cycle) |\\n|---|---|\\n| 0.0 | -0.20 |\\n| 1.0 | 0.55 |\\n| 2.5 | 1.25 |\\n| 5.0 | 2.30 |\\n| 10.0 | 3.05 |\\n| 15.0 | 3.10 |\\n| 20.0 | 3.05 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 seconds for O2 gas exposure and 10 seconds for in-situ HF exposure, both at the onset of saturation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The saturation curves demonstrate the self-limiting nature of both half-reactions in the ALE process. In subfigure (b), the oxidation step saturates because oxygen diffusion slows as the TiO2 layer thickens. In subfigure (c), the etching step saturates because the in-situ HF selectively removes only the TiO2 layer and stops when it reaches the underlying TiN. This dual self-limiting behavior is essential for achieving precise, reproducible etch depths with angstrom-scale control in each cycle.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate increases from 1.1 Å/cycle at 150°C to 3.2 Å/cycle at 300°C due to enhanced oxygen diffusion into TiN at higher temperatures, which produces thicker TiO2 layers during each oxidation step. Above 300°C, the etch rate plateaus because the oxide thickness becomes limited by factors other than diffusion kinetics, such as the thermodynamic stability of the oxide layer or surface reaction saturation. This plateau behavior is consistent with observations in other thermal ALE processes for TiN.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 3 Å/cycle.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":42,"width":479,"height":387},{"panel_id":"b","x":484,"y":45,"width":457,"height":384},{"panel_id":"c","x":953,"y":43,"width":452,"height":382}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/Isotropic plasma-thermal atomic layer etching of.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":1408,"height":433,"image_format":"jpeg","image_sha256":"6ea1080e1582cd6113625c32aabf7de6b7ae8c9f9fba7f7837ddb25bfc1ae1c3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_43_fig_5.jpg","caption":"Fig. 5. EPC versus temperature plot for the ALE of $\\mathrm{Al_2O_3}$ by 30 cycles of $\\mathrm{NF_3}$ remote plasma for $4\\mathrm{s}$ and TMA for $3\\mathrm{s}$ . The etching amount was determined by ellipsometry.","id":"train/atomic-layer-etching/experimental-usecase/43/fig_5","sample_id":"atomic-layer-etching/experimental-usecase/43/fig_5","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This line chart represents the Etch Per Cycle (EPC) Å/cycle for Atomic Layer Etching (ALE) of Al₂O₃ as a function of substrate temperature. The process uses cycles of NF₃ remote plasma followed by TMA exposure(3 s duration). EPC slowly increases with temperature up to a point (~250°C), then a rapid etch rate is observed and then stabilizes. This thickness loss was measured via ellipsometry.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Substrate Temperature (°C) | Etch Per Cycle (Å/cycle) |\\n|----------------------------|--------------------------|\\n| 150 | -0.1 |\\n| 175 | -0.1 |\\n| 200 | 0.0 |\\n| 225 | 0.4 |\\n| 250 | 1.4 |\\n| 275 | 2.6 |\\n| 290 | 3.8 |\\n| 300 | 4.2 |\\n| 320 | 4.6 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Exposure to NF₃ remote plasma for 4 s to fluorinate the surface. \\n\\nExposure to TMA for 3 s to perform ligand exchange and remove the surface species.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thermal ALE process is mandatory. A plasma-enhanced removal step (Ar⁺ sputter) causes physical bombardment damage, which would destroy the atomic lattice of graphene. The thermal TMA step in this process provides a chemically selective and gentle removal mechanism via volatile AlF₃ formation, enabling damage-free etching necessary for 2D materials, despite the low or moderate temperature requirement.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher temperatures typically increase the thermal energy available for diffusion and reaction.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"NO, At 150°C, the EPC is very low (~0.5 Å/cycle) and is on the steep part of the curve. This means tiny temperature fluctuations in the reactor could cause significant percentage variations in the etch rate, destroying the atomic-scale depth control required. For reliable control, one must operate in the temperature-independent saturation regime (near 250-300°C) where the rate is stable.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":7,"width":654,"height":652}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/43/Surface reaction during thermal atomic layer etching of aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":656,"height":661,"image_format":"jpeg","image_sha256":"91f35c295f4360424302162140d58d683c8d58e95201dea4181c258e40a9a4bb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_45_figure_4.jpg","caption":"Figure 4. (a) Etch rates for TiN versus $\\mathrm{O}_3$ exposure time with constant HF exposure time of $1.0\\mathrm{~s}$ . (b) Etch rates for TiN versus HF exposure time with constant $\\mathrm{O}_3$ exposure time of $3.0\\mathrm{~s}$ .","id":"train/atomic-layer-etching/experimental-usecase/45/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/45/figure_4","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch rate increases with increasing O₃ exposure time at 250°C\"},{\"panel_id\":\"b\",\"text\":\"The etch rate increases with increasing HF exposure time at 250°C\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| O3 Exposure Time (s) | Etch Rate (Å/cycle) |\\n|---|---|\\n| 0.0 | 0.00 |\\n| 0.5 | 0.08 |\\n| 1.0 | 0.11 |\\n| 1.5 | 0.17 |\\n| 2.0 | 0.17 |\\n| 2.5 | 0.20 |\\n| 3.0 | 0.19 |\\n| 4.0 | 0.22 |\"},{\"panel_id\":\"b\",\"text\":\"| HF Exposure Time (s) | Etch Rate (Å/cycle) |\\n|---|---|\\n| 0.0 | 0.00 |\\n| 0.5 | 0.14 |\\n| 0.75 | 0.18 |\\n| 1.0 | 0.19 |\\n| 1.25 | 0.20 |\\n| 1.5 | 0.21 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The saturation behavior confirms that both half-reactions are self-limiting. The O₃ reaction self-terminates because the TiO₂ layer acts as a diffusion barrier preventing further oxidation. The HF reaction self-terminates because it can only remove the finite TiO₂ layer formed during oxidation—HF does not etch TiN directly.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Neither reactant alone etches TiN-O₃ only oxidizes the surface, and HF cannot etch TiN directly. Both half-reactions are required for etching.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Self-limiting behavior ensures that etch depth depends only on cycle count, not on precise exposure timing or local reactant concentration variations. This enables atomic-level thickness control and uniform etching across large wafers, which is essential for advanced device fabrication.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3 s for O₃ and 1 s for HF, yielding the optimized sequence 3-30-1-30 (with 30 s N₂ purges).\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":667,"height":472},{"panel_id":"b","x":1,"y":493,"width":667,"height":477}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/45/Thermal Atomic Layer Etching of Titanium Nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":675,"height":969,"image_format":"jpeg","image_sha256":"c48c3689e5e24b18e8fc6c836ce3e55ff34230ef465f3b4d25ea58fe01dfb9c6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_13.jpg","caption":"Figure 13. Etch rates at $170^{\\circ}\\mathrm{C}$ for $\\mathrm{TiO_2}$ : (a) $\\mathrm{BCl_3}$ with a constant $\\mathrm{WF_6}$ dose time of $0.2\\mathrm{s}$ and (b) $\\mathrm{WF_6}$ dose time with a constant $\\mathrm{BCl_3}$ exposure time of $1\\mathrm{s}$ . The ALE reactor was conditioned with $200\\mathrm{TiO_2}$ ALD cycles after every 3 subsequent ALE runs.","id":"train/atomic-layer-etching/experimental-usecase/46/figure_13","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_13","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure characterizes the saturation behavior of a thermal Atomic Layer Etching (ALE) process for Titanium Dioxide , Etch rate as a function of BCl₃ dose time at 170 °C, showing clear saturation and self-limiting behavior characteristic of thermal ALE.\"},{\"panel_id\":\"b\",\"text\":\"Etch rate as a function of WF₆ dose time at 170 °C, also exhibiting saturation, confirming that the TiO₂ etching process follows an ALE mechanism rather than continuous etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| BCl₃ Dose Time (s) | Etch Rate (Å/cycle) |\\n|------------------:|-------------------:|\\n| 0.0 | 0.00 |\\n| 0.1 | 0.44 |\\n| 0.5 | 0.65 |\\n| 1.0 | 0.68 |\\n| 1.5 | 0.72 |\"},{\"panel_id\":\"b\",\"text\":\"| WF₆ Dose Time (s) | Etch Rate (Å/cycle) |\\n|-----------------:|-------------------:|\\n| 0.0 | 0.10 |\\n| 0.1 | 0.50 |\\n| 0.2 | 0.68 |\\n| 0.4 | 0.60 |\\n| 0.5 | 0.64 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1 . WF₆ pulse: 0.2 s\\n\\n, 2. N₂ purge: 45 s\\n\\n, 3. BCl₃ pulse: 1.0 s\\n\\n, 4. N₂ purge: 45 s\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 0.1 s, the process operates in the unsaturated regime (the steep slope of the curve), where the etch rate is highly sensitive to small fluctuations in gas flow or pressure. In contrast, 1.0 s is in the saturated regime (plateau), where the rate is stable. Operating at 0.1 s risks severe non-uniformity, especially in high-aspect-ratio structures where gas diffusion is slow.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Chamber Memory Effect. Without conditioning, the reactant gases (WF₆ andBCl₃) would partially react with or adsorb onto the chamber walls instead of the sample, effectively lowering the partial pressure at the wafer surface. This would likely cause the saturation curves to shift to the right (requiring longer doses) or show artificially lower etch rates until the walls eventually became seasoned.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Surface Site Saturation. The surface is fully fluorinated (or modified) by the WF₆; once all available surface bonds have reacted, no further chemical modification can occur regardless of excess exposure, limiting the material removed in the subsequent step.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":465,"height":367},{"panel_id":"b","x":458,"y":2,"width":455,"height":366}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":914,"height":369,"image_format":"jpeg","image_sha256":"0b7388362a627306225c52e0dd3c30090d1834a753ffa788bd0369b67b6fce9f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_46_figure_6.jpg","caption":"Figure 6. (a) Thickness and (b) refractive index at $632.8~\\mathrm{nm}$ of samples with $5.5\\mathrm{nm}$ $\\mathrm{TiO_2}$ followed by 0, 15, 25, 50, and $100\\mathrm{WF}_6$ doses at $220^{\\circ}\\mathrm{C}$ , measured with spectroscopic ellipsometry. Lines are a guide to the eye.","id":"train/atomic-layer-etching/experimental-usecase/46/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/46/figure_6","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This line chart represents the change in film thickness with increasing WF₆ doses at 220 °C, showing a linear decrease that indicates progressive etching or consumption of the 5.5 nm TiO₂ film.\"},{\"panel_id\":\"b\",\"text\":\"This line chart represents the change in refractive index (at 632.8 nm) with increasing WF₆ doses, showing a sharp initial drop (0–25 doses) followed by stabilization at ~1.85, indicating initial chemical modification before steady-state etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of WF₆ Doses | Thickness (Å) |\\n|--------------------:|--------------:|\\n| 0 | 56.00 |\\n| 10 | 58.64 |\\n| 25 | 53.11 |\\n| 50 | 50.34 |\\n| 100 | 33.71 |\"},{\"panel_id\":\"b\",\"text\":\"| Number of WF₆ Doses | Refractive Index @ 632.8 nm |\\n|--------------------:|----------------------------:|\\n| 0 | 2.31 |\\n| 10 | 2.29 |\\n| 25 | 1.88 |\\n| 50 | 1.83 |\\n| 100 | 1.90 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Deposition: Deposition of a 5.5 nm TiO₂ starting layer.\\n\\nTreatment: Exposure to a specific number of WF₆ doses (0, 15, 25, 50, or 100) at 220°C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The stepwise, dose-dependent index change allows spatial patterning of the refractive index by controlling the number of WF₆ doses across different regions of the waveguide. This enables the fabrication of gradient-index profiles for improved light confinement and mode shaping.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"WF₆ fluorination is superior for independent control. It changes the index by altering composition while also thinning the film. Simply depositing a thinner film only changes thickness, not the intrinsic index. Fluorination offers two tuning knobs (dose for index, cycles for thickness).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"WF₆ fluorinates the TiO₂, converting it into a titanium oxyfluoride (TiOFₓ) or fluoride. Fluorine incorporation increases the film's band gap and lowers its density/polarizability, both of which directly cause a decrease in the refractive index.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":2,"width":465,"height":385},{"panel_id":"b","x":514,"y":1,"width":469,"height":385}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/46/Thermal Selective Vapor Etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":986,"height":389,"image_format":"jpeg","image_sha256":"32a4fa18ba9b0b54af0dd0de1536eba71f513996e938fc613e4df6ab900f413a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_15_fig_7.jpg","caption":"FIG. 7. Etch per cycle as a function of $\\mathrm{Cl}_2$ impacts from MD simulations. $1000\\mathrm{Ar}^+$ ion impacts are used for the ion bombardment step in every case. The energy of the $\\mathrm{Ar}^+$ ions is $70\\mathrm{eV}$ .","id":"train/atomic-layer-etching/simulation-usecase/15/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/15/fig_7","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot shows the relationship between the number of Cl₂ impacts and etch per cycle. The EPC initially increases rapidly with chlorine dose due to incomplete surface coverage, then saturates beyond ~1000 Cl₂ i impacts at ~0.9 Å/cycle. This plateau demonstrates the self-limiting behavior of ideal atomic layer etching, where additional chlorine does not increase material removal once the surface is fully chlorinated.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Number of Cl₂ Impacts | Etch per Cycle (Å/cycle) |\\n|----------------------|--------------------------:|\\n| 0 | 14.52 |\\n| 110 | 0.53 |\\n| 250 | 0.68 |\\n| 500 | 0.84 |\\n| 1000 | 0.85 |\\n| 2265 | 0.89 |\\n| 3000 | 0.92 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Because 250 impacts is in the non-saturated region (steep slope). Small fluctuations in gas flow or pressure at this point would cause large changes in the etch rate. At 1500 impacts, the process is on the plateau (saturated), so it is robust against small variations.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Speed vs. Precision. The ALE process is extremely slow (only 0.9 Å per full cycle) compared to continuous etching. The trade-off is accepting low throughput to gain atomic-level precision and control.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Site Saturation. At 500 impacts, active surface sites are still available. By 2500 impacts, every available surface bond is already occupied by a Chlorine atom (saturated). Since no new Chlorine can stick, the subsequent ion etch cannot remove any additional material, leading to the plateau.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Spontaneous Etching. It would indicate that the excess Chlorine is beginning to etch the silicon chemically on its own (without ions), destroying the self-limiting behavior that defines Atomic Layer Etching.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":8,"width":675,"height":469}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":675,"height":477,"image_format":"jpeg","image_sha256":"40acd0fa0dde7cbb89aeec51231ce66adea79a6f94b15d28ba93a3a96129aa33","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_11.jpg","caption":"Fig. 11. (a) The effect of the substrate velocity on the etching per cycle. (b) The effect of the moving substrate on etching per cycle to illustrate the uniformity of the etch.","id":"train/atomic-layer-etching/simulation-usecase/16/fig_11","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_11","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A scatter plot showing the relationship between velocity (mm/s) and etching per cycle (Å/cycle). The etching decreases as the velocity increases.\"},{\"panel_id\":\"b\",\"text\":\"A scatter plot showing the etching per cycle (Å/cycle) at different substrate positions (mm) for velocities of 80 mm/s, 120 mm/s, and 160 mm/s. The etching remains relatively constant across the substrate positions for each velocity.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Velocity (mm/s) | Etching per cycle (Å/cycle) |\\n|---|---|\\n| 0 | 0.47 |\\n| 50 | 0.42 |\\n| 100 | 0.26 |\\n| 150 | 0.15 |\"},{\"panel_id\":\"b\",\"text\":\"| Substrate position (mm) | Etching per cycle (Å/cycle) 80 |Etching per cycle (Å/cycle) 120 |Etching per cycle (Å/cycle) 160 |\\n|---|---|---|---|\\n| 0 | 0.36 | 0.22 | 0.1 |\\n| 0.1 | 0.36 | 0.22 | 0.1 |\\n| 0.2 | 0.36 | 0.22 | 0.1 |\\n| 0.3 | 0.36 | 0.22 | 0.1 |\\n| 0.4 | 0.36 | 0.22 | 0.1 |\\n| 0.5 | 0.36 | 0.22 | 0.1 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With increasing velocity, the exposure time is decreasing. Usually long exposure times result in better uniformity.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The parameter that is changed is the dosing time or exposure time. The exposure time scales with 1/velocity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The saturated EPC is 0.47 A/cycle, this is reached with a velocity below 40 mm/s.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.36 mm/s\"}]}]","bbox":[{"panel_id":"b","x":3,"y":587,"width":658,"height":535},{"panel_id":"a","x":0,"y":0,"width":666,"height":522}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":667,"height":1178,"image_format":"jpeg","image_sha256":"d2c76494d148bce90e51cf13e87663c814534ce0cb6d252e1dbdbb2f542ef7dd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_10.jpg","caption":"Figure 10. Etch rate as measured by change in integrated absorbance of the $\\mathrm{Ti - O}$ vibrational modes from 400 to $960~\\mathrm{cm^{-2}}$ for each HF exposure. Temperature is varied from 80 to $300^{\\circ}C$","id":"train/atomic-layer-etching/simulation-usecase/20/figure_10","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_10","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This line chart plots the etch rate (measured by the loss of integrated Ti-O IR absorbance per HF exposure) against temperature (80-300°C) for a titanium-based film, showing that the etch rate increases with temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Δ Int. Abs. Loss / HF Exposure |\\n|-----------------:|--------------------------------:|\\n| 80 | 0.00 |\\n| 100 | 0.02 |\\n| 120 | 0.05 |\\n| 140 | 0.07 |\\n| 160 | 0.25 |\\n| 180 | 1.00 |\\n| 200 | 1.10 |\\n| 220 | 1.30 |\\n| 240 | 1.90 |\\n| 260 | 2.10 |\\n| 280 | 2.50 |\\n| 300 | 3.80 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The cut-off temperature is approximately 150°C. Below this point, the curve is effectively flat (close to zero on the Y-axis), indicating that the reaction kinetics are insufficient to remove material.Minimum Reactor Setting: To ensure the film is successfully etched, the user must set the reactor to a minimum of 150°C (or ideally higher, such as 175°C, for a practical rate). Any setting below 150°C results in negligible absorbance loss, meaning the process essentially fails to etch the film.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The low-temperature region is flat (low sensitivity), while the high-temperature region is steep (high sensitivity).At 300 °C, the etch rate is high, enabling fast throughput, but the process is highly sensitive to temperature variations; a ±5 °C deviation causes large fluctuations in etch rate. At 100 °C, the etch rate is stable but negligible. Thus, while intermediate temperatures may offer a trade-off, operation at 300 °C requires stringent thermal control.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Since infrared absorbance follows the Beer–Lambert law and is proportional to the number of bonds, a fourfold increase in absorbance loss indicates that approximately four times more TiO2 is removed per HF exposure at 300 °C than at 175 °C. This strong temperature dependence underscores the need for precise thermal control to ensure a stable etch rate.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 250 °C, the etch rate shows strong temperature dependence; a 10 °C gradient (250 °C at the top vs. 240 °C at the bottom) would therefore cause slower etching at the bottom, leading to a tapered (V-shaped) profile. Achieving vertical sidewalls would require operation in a temperature-insensitive (saturated) regime, which is not observed here.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":647,"height":651}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":650,"height":658,"image_format":"jpeg","image_sha256":"402a0c3918af6a9ffc87775a8b91679c4b76868aa82a49425ef568ce55cc23bc","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_20_figure_11.jpg","caption":"Figure 11. Arrhenius plot obtained from etch rates versus temperature presented in Figure 10. Slope of the plot yields an activation barrier of $E_{\\mathrm{a}} = 42\\mathrm{kJ / mol}$ .","id":"train/atomic-layer-etching/simulation-usecase/20/figure_11","sample_id":"atomic-layer-etching/simulation-usecase/20/figure_11","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure is an Arrhenius plot (logarithm of etch rate vs. inverse temperature) derived from the data in Figure 10. The linear fit (a dashed line) yields an activation energy (Eₐ) of 42 kJ/mol for the HF etching reaction of the Ti-based film.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 1000/T (K⁻¹) | ln[Δ Int. Abs. Loss / HF Exposure] |\\n|-------------:|------------------------------------:|\\n| 1.75 | 2.65 |\\n| 1.80 | 2.50 |\\n| 1.85 | 2.45 |\\n| 2.00 | 2.05 |\\n| 2.20 | 2.00 |\\n| 2.35 | 1.30 |\\n| 2.45 | 0.70 |\\n| 2.55 | 0.75 |\\n| 2.65 | 0.10 |\\n| 2.80 | 0.25 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The key step is taking the natural logarithm of the etch rate (ln(k)) and plotting it against the inverse absolute temperature (1/T). This transformation linearizes the Arrhenius equation, allowing the activation energy (Eₐ) to be determined directly from the slope of the best-fit line (-Eₐ/R).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Thermal HF Wet Etch: Pro: Selective, low damage. Con: Isotropic (etches in all directions).\\n\\nPlasma-Enhanced Dry Etch: Pro: Can be highly anisotropic via ion bombardment.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"An Eₐ of 42 kJ/mol (a relatively low value, ~0.44 eV) indicates the rate-limiting step is a surface chemical reaction with a moderate thermal barrier. It is not diffusion-limited (which would be lower, ~10-20 kJ/mol) nor a very high-energy bond-breaking process, suggesting a specific, activated chemisorption or ligand-exchange step controls the etch rate.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It enables predictable process tuning and scaling. Engineers can precisely calculate the temperature change needed to achieve a target etch rate (e.g., to meet throughput specs) or to maintain a constant rate despite equipment variations, ensuring reproducible results during high-volume manufacturing.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":5,"width":646,"height":644}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/20/Prediction and Validation of the Process Window for Atomic Layer Etching HF Exposure on TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"20","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":652,"height":655,"image_format":"jpeg","image_sha256":"4b899a56c6a03b4afe99259e1d74518cca115b4ce8c8e06437c224426399c4e5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_27_fig_6.jpg","caption":"FIG. 6. Synergy plot for GaN using $\\mathrm{SF}_6$ plasma and TMA at $300^{\\circ}\\mathrm{C}$ . The first 25 pulses only involve dosing $\\mathrm{SF}_6$ plasma, the next 25 pulses only TMA, and the last 75 cycles are full ALE cycles with both $\\mathrm{SF}_6$ plasma and TMA dosed. The inset shows the transition between only $\\mathrm{SF}_6$ pulses and only TMA pulses.","id":"train/atomic-layer-etching/simulation-usecase/27/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/27/fig_6","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Synergy plot demonstrating self-limiting behavior of the GaN ALE process at 300°C. During SF6 plasma-only pulses (0-25), the film thickness remains constant after an initial ~0.7 nm drop. During TMA-only pulses (25-50), thickness is also constant. Full ALE cycles (50-125) show linear etching with EPC of 0.41 nm/cycle initially (oxidized layer) decreasing to 0.31 nm/cycle (bulk GaN).\"},{\"panel_id\":\"b\",\"text\":\"Magnified view of the transition from SF6-only to TMA-only pulses, showing a 0.33 nm thickness decrease when TMA is first introduced, indicating that etching occurs during the TMA step.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulses/Cycles | Film Thickness (nm) | Phase / Rate |\\n|---|---|---|\\n| 0 | 43.5 | Half-cycle A |\\n| 10 | 43.4 | Half-cycle A |\\n| 20 | 43.3 | Half-cycle A |\\n| 25 | 43.2 | Half-cycle A (End) |\\n| 26 | 42.9 | Half-cycle B (Start, -0.33 nm drop) |\\n| 40 | 42.7 | Half-cycle B |\\n| 50 | 42.5 | Half-cycle B (End) |\\n| 60 | 38.5 | ALE (~0.41 nm/cycle) |\\n| 70 | 34.5 | ALE |\\n| 80 | 31.5 | ALE (~0.31 nm/cycle) |\\n| 90 | 28.5 | ALE |\\n| 100 | 25.5 | ALE |\\n| 110 | 22.5 | ALE |\\n| 120 | 19.5 | ALE |\\n| 125 | 18.0 | ALE (End) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The higher initial EPC corresponds to etching through the oxidized surface layer, while the lower EPC reflects etching of the more stoichiometric bulk GaN underneath.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"100%.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The synergy plot shows that neither SF6 plasma alone nor TMA alone causes continuous etching. The 0.33 nm thickness drop when switching from SF6-only to TMA-only pulses indicates that etching occurs during the TMA ligand-exchange step, which removes the fluorinated surface layer. Since no continuous etching is observed for either half-cycle individually, the process exhibits 100% synergy.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Removal of adventitious carbon, the heavily oxidized GaN surface layer, or changes in optical properties due to surface fluorination.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":669,"height":507},{"panel_id":"b","x":2,"y":1,"width":309,"height":465}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":675,"height":511,"image_format":"jpeg","image_sha256":"70cbbc1d040332c998b1f83d703cf4869dcce8e0f3b3e92ee8e499447d0d13be","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_27_fig_9.jpg","caption":"FIG. 9. RMS roughness as a function of etched thickness, plotted alongside the fitted change in RMS roughness as obtained using the curvature-dependent model from Ref. 85.","id":"train/atomic-layer-etching/simulation-usecase/27/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/27/fig_9","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"RMS roughness evolution during GaN ALE at 300°C, comparing experimental data with a curvature-dependent smoothing model. Roughness decreases from ~2.6 nm to ~1.9 nm after 25 nm of etching. The rate of smoothing slows with increasing etch depth, in agreement with the model using a fitted diffusion parameter ε = 0.05×10⁻⁹ m.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Etched thickness (nm) | RMS roughness (nm) |\\n|---|---|\\n| 0 | 2.8 |\\n| 5 | 2.4 |\\n| 10 | 2.2 |\\n| 15 | 2.0 |\\n| 20 | 1.9 |\\n| 25 | 1.8 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The rate of smoothing decreases as the etched thickness increases. Initially, roughness drops rapidly from ~2.6 nm to ~2.2 nm within the first 10 nm of etching. Beyond this, the smoothing rate slows and begins to plateau. This behavior is captured by the curvature-dependent model, where high-curvature surface features etch faster initially, but as the surface becomes smoother, further improvement becomes more gradual.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It represents a measure of the fluorine diffusion rate into the GaN surface during the modification step.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"GaN has a lower ε (0.05×10⁻⁹ m) compared to amorphous Al2O3 (1.50×10⁻⁹ m), indicating GaN is more resistant to fluorination.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 1.9 nm.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":664,"height":527}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/27/Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"27","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":669,"height":536,"image_format":"jpeg","image_sha256":"94b5c28753734707a4c68352c23fa9037d890ef43a18001e349c054bcb95ca03","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_54aef25b16ec4f51b16e9d84a9a930c89371e345050a8d628002da041a377e5d.jpg","caption":"","id":"train/atomic-layer-etching/simulation-usecase/33/54aef25b16ec4f51b16e9d84a9a930c89371e345050a8d628002da041a377e5d","sample_id":"atomic-layer-etching/simulation-usecase/33/54aef25b16ec4f51b16e9d84a9a930c89371e345050a8d628002da041a377e5d","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot displays the variation in the nitrogen-to-silicon atomic ratio (N_N/N_Si) as a function of HF dose, expressed in HF/nm². Initially, the ratio begins around 1.3, then decreases to a minimum near 1.05 at approximately 80–100 HF/nm², before gradually increasing again toward the initial value. A fitted curve highlights this non-linear trend, suggesting that HF exposure initially disrupts nitrogen content before stabilizing or reversing the effect at higher doses. A horizontal dashed line serves as a reference level, possibly corresponding to the stoichiometric or ideal N_N/N_Si ratio prior to treatment.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Dose (HF/nm²) | N_N/N_Si |\\n|---------------|----------|\\n| 0 | 1.3 |\\n| 20 | 1.2 |\\n| 40 | 1.15 |\\n| 60 | 1.10 |\\n| 80 | 1.05 |\\n| 100 | 1.07 |\\n| 120 | 1.12 |\\n| 140 | 1.18 |\\n| 160 | 1.22 |\\n| 180 | 1.26 |\\n| 200 | 1.3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the HF dose increases from 0 to around 100 HF/nm², the N_N/N_Si ratio decreases, reaching a minimum, indicating a loss or displacement of nitrogen relative to silicon. Beyond this point, further HF exposure leads to a recovery in the N_N/N_Si ratio, suggesting re-equilibration or re-incorporation of nitrogen species. The resulting U-shaped trend suggests dose-dependent etching or modification behaviour.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 80–100 HF/nm².\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Initial HF doses may deplete nitrogen content, a threshold dose exists where nitrogen loss peaks, higher doses may help restore or stabilise nitrogen levels\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":275,"height":222}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/54aef25b16ec4f51b16e9d84a9a930c89371e345050a8d628002da041a377e5d.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/54aef25b16ec4f51b16e9d84a9a930c89371e345050a8d628002da041a377e5d.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"not_found"},"width":275,"height":222,"image_format":"jpeg","image_sha256":"981a8017008e530c28b052623f068b3e2ad13dbadd19db601ad3485e378e236b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_8a80cb301b636349b065c782a8596739ca56704250fa04b4481f225791f3f0a3.jpg","caption":"(b)","id":"train/atomic-layer-etching/simulation-usecase/33/8a80cb301b636349b065c782a8596739ca56704250fa04b4481f225791f3f0a3","sample_id":"atomic-layer-etching/simulation-usecase/33/8a80cb301b636349b065c782a8596739ca56704250fa04b4481f225791f3f0a3","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The scatter plot displays the etching yield of silicon nitride (Si₃N₄) as a function of the electronic input energy (Eₙ) during HF-based processing. As the input energy increases from 0 to 50 eV, the etching yield steadily rises in a nonlinear fashion. The data points are fit with a dashed curve, showing an accelerating increase, suggesting that higher Eₙ values significantly enhance the reaction efficiency. The inclusion of error bars indicates variability in the measurements, particularly at higher energies.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| $E_{\\\\mathrm{in}}$ (eV) | Etching yield ($\\\\mathrm{Si}_3\\\\mathrm{N}_4$/HF) |\\n|---|---|\\n| 0.00 | 0.00 |\\n| 10.00 | 0.01 |\\n| 20.00 | 0.04 |\\n| 30.00 | 0.06 |\\n| 40.00 | 0.07 |\\n| 50.00 | 0.08 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the input energy increases from 0 to 50 eV, the etching yield of Si₃N₄ increases in a nonlinear manner. At low energies, the increase in yield is modest, but the trend becomes steeper at higher energies, indicating enhanced reaction kinetics or more efficient bond breaking with increasing Eₙ. This suggests that a threshold energy is required to initiate etching effectively, and further increases in Eₙ significantly boost the reaction rate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 40 eV.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Higher Eₙ values result in greater etching yields, threshold below which etching is inefficient, Nonlinear increases suggest diminishing returns at very high energies.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":309,"height":244}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/8a80cb301b636349b065c782a8596739ca56704250fa04b4481f225791f3f0a3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/8a80cb301b636349b065c782a8596739ca56704250fa04b4481f225791f3f0a3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":309,"height":244,"image_format":"jpeg","image_sha256":"6e30bd4f4ee4c3cce541f0d5d2c6cd9498872b26a42c879d6a6c810febe16af7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_33_figure_4.jpg","caption":"Figure 4. Comparison of reaction energies during etching MD calculated using DFT $(E_{\\mathrm{rxn}}^{\\mathrm{DFT}})$ and NNP $(E_{\\mathrm{rxn}}^{\\mathrm{NNP}})$ . Each point refers to individual reactions. The density of data points on the color bar indicates the local density of reaction events in the vicinity of each point, accounting for the superposition of many data points.","id":"train/atomic-layer-etching/simulation-usecase/33/figure_4","sample_id":"atomic-layer-etching/simulation-usecase/33/figure_4","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a parity plot comparing reaction energies computed via Density Functional Theory (DFT) and a Neural Network Potential (NNP) model. Each point represents a single reaction’s predicted energy from both methods, with the color intensity indicating the density of data points at that value. The data clusters tightly along the diagonal parity line (dashed), suggesting strong agreement between DFT and NNP predictions across a broad energy range (from -5 eV to 10 eV). This indicates that the NNP model is well-trained and capable of accurately reproducing DFT-level energetics for the evaluated reactions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| $E_{\\\\mathrm{rxn}}^{\\\\mathrm{DFT}}$ (eV) | $E_{\\\\mathrm{rxn}}^{\\\\mathrm{NNP}}$ (eV) |\\n|---------------------------------------|----------------------------------------|\\n| -5 | -5 |\\n| -3 | -2.9 |\\n| 0 | 0.1 |\\n| 2 | 2.1 |\\n| 5 | 5.2 |\\n| 8 | 8.3 |\\n| 10 | 10 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plot indicates a strong linear correlation between the reaction energies predicted by the neural network potential (NNP) and those calculated via density functional theory (DFT). Most points cluster along the diagonal, which represents perfect agreement. This suggests that the NNP model closely replicates DFT-calculated values across a wide range of reaction energies, validating its reliability as a surrogate model for high-throughput or large-scale simulations.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 0 eV.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It can replace DFT in large-scale simulations with high accuracy, It provides significant computational speed-up while preserving fidelity.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":569,"height":439}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/33/Atomistic Simulation of HF Etching Process of Amorphous.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":569,"height":439,"image_format":"jpeg","image_sha256":"3d803554aca5d724f4ea612dcd65278f854e5268636ec86a06d4d71956bae100","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_35_FIG4.jpg","caption":"Figure 4. Scatter plot showing the adsorption energy versus oxygen coverage of the minima shown in Figure 3. All of the points were fit to a parabola for eye-guiding purposes. The highlighted points are cross-referenced to the configurations shown in Figure 3. Brown, white, and red spheres represent carbon, hydrogen, and oxygen atoms, respectively.","id":"train/atomic-layer-etching/simulation-usecase/35/FIG4","sample_id":"atomic-layer-etching/simulation-usecase/35/FIG4","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows adsorption energy as oxygen coverage increases. At low coverage, adsorption is strongly favorable. Stable species such as H₂O are formed. At higher coverage, adsorption becomes less stable. New bonds form and the polymer structure begins to break.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Coverage [O/nm²] | Adsorption Energy [eV/nm²] | Annotated chemical event |\\n|------------------|----------------------------|--------------------------|\\n| 0.5 | −2.02 (global minimum) | Initial adsorption |\\n| 3.0 | −1.00 (local minimum) | H₂O formation (O₅) |\\n| 6.8 | +0.10 (local maximum) | O₂H compound formed (O₁₁) |\\n| 8.0 | +0.09 | C–O–OH unstable state (O₁₃) |\\n| 9.0 | −0.21 | Benzene ring rupture (O₁₄–O₁₅) |\\n| 9.5 | −0.20 | C–O–C bridge bond formed (O₁₆) |\\n| 12.5 | −0.20 | O₃ formation (O₁₉) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At low oxygen coverage, reactions favor stable adsorption and low-energy products such as water. As coverage increases, the surface begins to form OH and peroxide-like species. At even higher coverage, the chemistry becomes destructive, leading to bond bridging, ozone formation, and ring rupture. This shows a transition from surface functionalization to surface damage.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Adsorption is more energetically favorable at low oxygen coverage.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The appearance of C–O–C bridges and benzene ring rupture indicates that the polymer backbone is being altered. These reactions go beyond surface functionalization and involve structural damage. This suggests reduced mechanical and chemical stability at high oxygen loading.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In surface treatment processes, controlled functionalization is often desired without damaging the material. This figure shows that excessive oxygen leads to polymer degradation. Identifying the onset of ring rupture helps define safe processing limits. This is critical for plasma and oxidative treatments of polymers.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":668,"height":402}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/images/FIG4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/35/Density Functional Theory Study of Oxygen Adsorption on Polymer Surfaces for Atomic-Layer.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":672,"height":406,"image_format":"jpeg","image_sha256":"f20d59391b19adae8f9ce813ef08ac731dfbccaee2e7fb2da02fef6d9a360754","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_6_fig_15.jpg","caption":"FIG. 15. Normalized atomic Cl counts as a function of $\\mathsf{Ar}^+$ fluence. Subfigure (a) shows the results for OES experiments (where the ion energy is estimated to be about $85\\mathrm{eV}$ ) and subfigure (b) shows results from MD ALE simulations where the ion energy is $80\\mathrm{eV}$ . In both cases, the results are normalized using the value observed at the peak.","id":"train/atomic-layer-etching/simulation-usecase/6/fig_15","sample_id":"atomic-layer-etching/simulation-usecase/6/fig_15","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"box plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The experimental scatter plot shows a sharp decrease in Cl count with increasing ion dosage up to about 10–15 × 10¹⁵ Ar⁺/cm². After that, the count levels off around 0.5 arb. units, suggesting that most Cl atoms have been desorbed or sputtered and that the system has reached a steady state.\"},{\"panel_id\":\"b\",\"text\":\"The MD simulation results mirror this trend but show a steeper and more sustained decline. Initial Cl counts are slightly higher in simulation, but decrease more rapidly, falling below 0.2 arb. units by 50 × 10¹⁵ Ar⁺/cm². The more aggressive decline in simulations may reflect idealized surface models with fewer defect traps or re-adsorption pathways\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ion Dosage (Ar⁺/cm²) × 10¹⁵ | Cl Count (arb. units) |\\n|-----------------------------|------------------------|\\n| 0 | 1.20 |\\n| 2 | 1.00 |\\n| 4 | 0.90 |\\n| 6 | 0.80 |\\n| 8 | 0.70 |\\n| 10 | 0.65 |\\n| 12 | 0.60 |\\n| 14 | 0.58 |\\n| 16 | 0.55 |\\n| 18 | 0.53 |\\n| 20 | 0.52 |\\n| 25 | 0.51 |\\n| 30 | 0.50 |\\n| 35 | 0.50 |\\n| 40 | 0.50 |\\n| 45 | 0.50 |\\n| 50 | 0.50 |\"},{\"panel_id\":\"b\",\"text\":\"| Ion Dosage (Ar⁺/cm²) × 10¹⁵ | Cl Count (arb. units) |\\n|-----------------------------|------------------------|\\n| 0 | 1.60 |\\n| 2 | 1.20 |\\n| 4 | 1.00 |\\n| 6 | 0.80 |\\n| 8 | 0.65 |\\n| 10 | 0.55 |\\n| 12 | 0.48 |\\n| 14 | 0.42 |\\n| 16 | 0.38 |\\n| 18 | 0.34 |\\n| 20 | 0.30 |\\n| 25 | 0.27 |\\n| 30 | 0.24 |\\n| 35 | 0.22 |\\n| 40 | 0.20 |\\n| 45 | 0.19 |\\n| 50 | 0.18 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Cl desorption, Surface sputtering, Bond breakage, Cl depletion over time\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In both the experimental and simulation results, Cl count decreases as ion dosage increases. The experimental data shows a rapid initial drop followed by a plateau near 0.5 arb. units, indicating surface saturation or depletion. In contrast, simulations exhibit a sharper and more sustained decline, reaching much lower final values. This suggests that Cl is more easily removed in the idealized simulation environment, while experimental surfaces may retain Cl due to surface defects or incomplete reactions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 15 × 10¹⁵ Ar⁺/cm²\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":8,"y":11,"width":686,"height":478},{"panel_id":"b","x":720,"y":7,"width":690,"height":481}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/images/fig_15.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/6/Dynamics of plasma atomic layer etching Molecular.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"6","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":1411,"height":489,"image_format":"jpeg","image_sha256":"1fac63a969f142d7b775dfa54390c2dbba3660a16dfdb53394f215e7a46c5cbf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_8_fig_6.jpg","caption":"FIG. 6. Synergy plot for GaN using $\\mathrm{SF}_6$ plasma and TMA at $300^{\\circ}\\mathrm{C}$ . The first 25 pulses only involve dosing $\\mathrm{SF}_6$ plasma, the next 25 pulses only TMA, and the last 75 cycles are full ALE cycles with both $\\mathrm{SF}_6$ plasma and TMA dosed. The inset shows the transition between only $\\mathrm{SF}_6$ pulses and only TMA pulses.","id":"train/atomic-layer-etching/simulation-usecase/8/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/8/fig_6","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart illustrates the relationship between film thickness and pulses/cycles, showing a decreasing trend if both reactants are dosed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulses/Cycles | Film thickness (nm) |\\n|---|---|\\n| 0 | 43 |\\n| 25 | 43 |\\n| 50 | 42 |\\n| 75 | 33 |\\n| 100 | 25 |\\n| 125 | 18 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 25 pulses/cycles the SF6 plasma dosing is switched with TMA dosing, here a drop of 0.33 nm is observed. So based on this part of the graph the EPC is 0.33 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that there are temperature differences as an higher temperature can main a higher EPC.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that the flurination step increases the thickness slightly with the incorporation of fluorine.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It requires roughly 30 cycles.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":1,"width":669,"height":510}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/Isotropic atomic layer etching of GaN using SF6 plasma and AI(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":675,"height":511,"image_format":"jpeg","image_sha256":"70cbbc1d040332c998b1f83d703cf4869dcce8e0f3b3e92ee8e499447d0d13be","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_8_fig_9.jpg","caption":"FIG. 9. RMS roughness as a function of etched thickness, plotted alongside the fitted change in RMS roughness as obtained using the curvature-dependent model from Ref. 85.","id":"train/atomic-layer-etching/simulation-usecase/8/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/8/fig_9","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The line chart shows the relationship between etched thickness and RMS roughness, with experimental data points and a curvature-dependent model curve.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Etched thickness (nm) | RMS roughness (nm) |\\n|---|---|\\n| 0 | 2.65 |\\n| 5 | 2.4 |\\n| 10 | 2.2 |\\n| 15 | 2.0 |\\n| 20 | 2.0 |\\n| 25 | 1.9 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that there is dust incorporated in the film or the deposition method with which the GaN is made is not uniform.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This is not likely, even for infinite etch thickness, a material can never be perfectly flat.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At least 20 nm must be etched away.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":3,"y":6,"width":666,"height":527}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/8/Isotropic atomic layer etching of GaN using SF6 plasma and AI(CH3)3.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":669,"height":536,"image_format":"jpeg","image_sha256":"94b5c28753734707a4c68352c23fa9037d890ef43a18001e349c054bcb95ca03","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_9_fig_3.jpg","caption":"Fig. 3. (a) Potential energy curve for $\\mathrm{SiCl_2}$ on the optimized Si(111) surface, here blue dots are the calculated data, and red line is the fitting function. $Z = 0$ represents the equilibrium position, and insets are the local views of the desorbed species. (b) Potential energy curve for the Si-adatom (atom A1 in Fig. 2(a)) in the absence of chlorine, insets are the local views of the desorbed species.","id":"train/atomic-layer-etching/simulation-usecase/9/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/9/fig_3","subset":"scatter-plot","split":"train","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a potential energy curve as a function of surface coordinate Z, with calculated data points and a fitted line for the desorption of a SiCl2 unit.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows a potential energy curve as a function of surface coordinate Z, with calculated data points and a fitted line for the desorption of a rest silicon atom.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Surface coordinate Z (Å) | Potential energy (eV) |\\n|---|---|\\n|-1 | 8 |\\n|-0.5 | 1.2 |\\n|0 | 0 |\\n|0.5 | 0.8 |\\n|1 | 1.5 |\\n|1.5 | 2.2 |\\n|2 | 2.4 |\\n|2.5| 2.5|\"},{\"panel_id\":\"b\",\"text\":\"| Surface coordinate Z (Å) | Potential energy (eV) |\\n|---|---|\\n|-1 | 8 |\\n|-0.5 | 1 |\\n|0 | 0 |\\n|0.5 | 0.5 |\\n|1 | 2 |\\n|1.5 | 3.2 |\\n|2 | 4.3 |\\n|2.5|5.2|\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In principle can silicon be etched continuously, however an energy of 6.1832 eV is required per silicon atom to do this.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"6.1832 eV\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SiCl2 unit has zero potential energy when it is in a standing up position on the surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The desorption energy is 2.5159 eV which is provided by energetic ions from the argon plasma.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":39,"width":672,"height":397},{"panel_id":"b","x":11,"y":525,"width":669,"height":388}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/9/Mechanism of photoassisted atomic layer etching of chlorinated Si(111) surfaces Insight.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":680,"height":913,"image_format":"jpeg","image_sha256":"29fb684a0eb321552219fc1a347296adae14aad9ae5e8b26340f99d54007c769","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/scatter-plot/validation/metadata.jsonl b/subsets/scatter-plot/validation/metadata.jsonl index 677f0020e692d597f3395fd8666743998cc8b1a9..8aeb8d838f114d54ea62f1c1418e4acd902bb132 100644 --- a/subsets/scatter-plot/validation/metadata.jsonl +++ b/subsets/scatter-plot/validation/metadata.jsonl @@ -1,12 +1,12 @@ -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_11_fig_2.jpg","caption":"Fig. 2. Linear relation of thickness and number of deposition cycles.","id":"validation/atomic-layer-deposition/experimental-usecase/11/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/11/fig_2","subset":"scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/K.-E. Elers et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":545,"height":339,"image_format":"jpeg","image_sha256":"a3d8028361cdcc5604f39e2f440aabe2bd29f1c7d812d20e93d297eace621add","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":545,"height":339}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a scatter plot demonstrating that the film thickness increases linearly with the number of ALD deposition cycles. The proportional relationship indicates a constant growth-per-cycle (GPC), confirming stable, self-limiting ALD behavior for the WNₓCᵧ process.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition cycles|Thickness (Å)|\\n|------------------|-------------|\\n|~70|~50|\\n|~120|~75|\\n|~200|~150|\\n|~300|~240–250|\\n|~400|~330|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A linear relationship between thickness and cycle count demonstrates a stable and predictable ALD growth process. This stability is essential for precisely controlling barrier thickness, ensuring uniform coverage over complex structures, and achieving reliable electrical and physical properties in semiconductor devices. Consistent GPC also supports reproducibility across wafers and process conditions, which is critical for integrating WNₓCᵧ into advanced interconnect technologies.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thickness increases from about 50–75 Å at lower cycles (~70–120 cycles) to around 250–330 Å at higher cycles (300–400 cycles).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Constant growth-per-cycle (GPC), Self-limiting surface reactions, Uniform film nucleation, Stable ALD process window\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig_7.jpg","caption":"FIG. 7. (Color online) Dielectric constants of the as-deposited $\\mathrm{Ga}_2\\mathrm{O}_3$ thin film and of those annealed at various RTA temperatures.","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig_7","subset":"scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":478,"height":375,"image_format":"jpeg","image_sha256":"243d0de88432842bcb609c05a0e24a4f6d69f754c74121e2bca853b81efe21f5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":474,"height":371}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The graph represents the variation of dielectric constants of the Ga₂O₃ thin films annealed at various temperatures. As temperature increases the dielectric constant decreases clearly.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Dielectric Constant |\\n|-----------------|---------------------|\\n| 200 | 13 |\\n| 500 | 10.5 |\\n| 700 | 9 |\\n| 900 | 9.3 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With increasing annealing temperature, the dielectric constant of the thin film decreased from 13 to 9. This is mainly due to the grain size variation due to annealing and relieving of strain during the annealing process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During low temperature annealing the dielectric constant was high, where as at higher temperatures the dielectric constant decreased.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the change in dielectric constant with annealing temperature can significantly affect the capacitance, leakage behavior, and overall reliability of Ga₂O₃-based capacitors and MOS devices.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_47_fig_3.jpg","caption":"Fig. 3. ALD growth parameters for $\\mathrm{Al(DEA)}_3$ . Precursor purge time (A), substrate temperature (B), and growth rate versus the number of cycles with linear fit (C).","id":"validation/atomic-layer-deposition/experimental-usecase/47/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/47/fig_3","subset":"scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/Wade et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":647,"height":1033,"image_format":"jpeg","image_sha256":"ae5adddfe7b926406f651344f5748741239275816c68b09126c71cffb7f0e3f7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":2,"width":637,"height":333},{"panel_id":"b","x":7,"y":334,"width":645,"height":338},{"panel_id":"c","x":18,"y":668,"width":618,"height":366}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the relationship between deposition rate and precursor purge time. As the precursor purge time increases, the deposition rate decreases slightly.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the relationship between and reactor temperature. As the reactor temperature increases, so does the deposition rate.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the relationship between the thickness and number of cycles. As the number of cycles increases, so does the thickness.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Prec. Purge (sec) | Dep. Rate (Å/cycle) |\\n|------------------|--------------------|\\n| 0 | ~1 |\\n| 10 | ~0.87 |\\n| 20 | ~0.89 |\\n| 30 | ~0.82 |\\n| 40 | ~0.80 |\\n| 60 | ~0.79 |\"},{\"panel_id\":\"b\",\"text\":\"| Reactor Temperature (°C) | Dep. Rate (Å/cycle) |\\n|---------------------------|---------------------|\\n| 200 | - |\\n| 250 | ~0.85 |\\n| 300 | ~0.88 |\\n| 350 | ~1.1 |\\n| 400 | ~1.6 |\"},{\"panel_id\":\"c\",\"text\":\"| Number of Cycles | Thickness (Ång) |\\n|-------------------|-----------------|\\n| 75 | - |\\n| 125 | ~135 |\\n| 175 | ~150 |\\n| 225 | - |\\n| 275 | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes, because it shows an increase in film thickness. Also, it is possible to observe the self-limiting behavior of an ALD process.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Al(DIA)3 is analyzed in all the subfigures.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film's thickness increases with the number of cycles, which corresponds with an atomic layer deposition process.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 210 Ang at 250 cycles.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG2_a.jpg","caption":"(a)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG2_a","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG2_a","subset":"scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG2_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG2_a.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":664,"height":550,"image_format":"jpeg","image_sha256":"ac6474b019f0125a632ef89d37e1668c5589833654103463b8e2dd9aa4537174","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":657,"height":544}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows growth per cycle as a function of cumulative precursor dose. Growth increases rapidly at low doses and then gradually approaches a plateau near ~0.3 Å per cycle, indicating saturation behavior. The dashed horizontal line marks the saturated growth value, while the dashed vertical line indicates the dose at which near-saturation is achieved. Error bars highlight experimental uncertainty, and the fitted curve emphasizes the self-limiting nature of the deposition process.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cumulative precursor dose (s) | Growth per cycle (Å) |\\n|-------------------------------|----------------------|\\n| 0.0 | 0.00 |\\n| 0.2 | 0.15 |\\n| 0.4 | 0.24 |\\n| 0.6 | 0.27 |\\n| 0.8 | 0.25 |\\n| 1.0 | 0.28 |\\n| 1.2 | 0.30 |\\n| 1.4 | 0.31 |\\n| 1.6 | 0.32 |\\n| 1.8 | 0.33 |\\n| 2.0 | 0.34 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Rapid rise in growth at low dose\\n-Clear plateau near ~0.3 Å per cycle\\n-Presence of a horizontal dashed saturation line\\n-Minimal change beyond the vertical dashed marker\\n-Overlapping error bars in the high-dose region\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around ~1.0 s.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Beyond saturation, longer dosing increases process time and precursor consumption without improving growth. This reduces throughput and efficiency without providing additional film quality benefits.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG2_b.jpg","caption":"(b)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG2_b","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG2_b","subset":"scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG2_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG2_b.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":664,"height":542,"image_format":"jpeg","image_sha256":"edcd58b6b73572eaaf4478bf94841268f74bd5b4840b74b49c8bf581af50aaad","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":7,"width":658,"height":534}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot shows growth per cycle as a function of precursor purge time. Growth varies slightly at very short purge times but rapidly stabilizes. Beyond approximately 2 s of purge, the growth per cycle remains constant at ~0.28 Å within experimental uncertainty. Increasing the purge time further does not affect growth, indicating complete removal of excess precursor and self-limiting ALD behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Precursor purge (s) | Growth per cycle (Å) | \\n|--------------------------|----------------------------|\\n| ~0.5 | ~0.27 | \\n| ~1.0 | ~0.29 | \\n| ~2.0 | ~0.28 | \\n| ~3.0 | ~0.27 | \\n| ~5.0 | ~0.28 | \\n| ~14–15 | ~0.27 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Once all excess precursors and by-products are removed from the chamber, extending the purge no longer affects the surface chemistry. The surface reactions are already complete, so the growth per cycle becomes independent of purge duration.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Growth per cycle is slightly lower at very short purge times and stabilizes at longer purge times.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A constant growth per cycle indicates that the surface reactions are self-limiting and reach full saturation each cycle. This suggests that precursor adsorption and reaction are confined to available surface sites rather than continuing uncontrollably.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Using a purge time longer than necessary reduces throughput without improving film quality. Identifying the shortest purge that still gives saturated growth helps optimize cycle time while maintaining reliable and reproducible deposition.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG2_c.jpg","caption":"(c)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG2_c","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG2_c","subset":"scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG2_c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG2_c.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":670,"height":541,"image_format":"jpeg","image_sha256":"3d0ce8e3010850bd777b9b05b8a7401064dedf89013acdd5a336c4a3421e59ed","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":663,"height":540}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows the dependence of growth per cycle on oxygen plasma exposure time. Growth increases sharply upon introducing the plasma and reaches a saturation plateau near ~0.3 Å per cycle within ~1–2 s. Further increases in plasma exposure do not enhance growth and instead lead to a slight decrease at the longest exposure. The dashed lines mark the approximate saturation level and the plasma time required to reach it, indicating a narrow optimal process window.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Oxygen plasma exposure (s) | Growth per cycle (Å) |\\n|----------------------------|----------------------|\\n| 0 | 0.00 |\\n| 0.5 | 0.28 |\\n| 1.0 | 0.30 |\\n| 2.0 | 0.32 |\\n| 4.0 | 0.30 |\\n| 5.0 | 0.28 |\\n| 10.0 | 0.26 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At very short plasma times, the surface still contains unreacted precursor fragments, so plasma exposure rapidly completes the oxidation step. Once those surface reactions are finished, additional plasma does not create new reactive sites, and the process becomes self-limiting, causing growth to plateau.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At long plasma exposure, the growth per cycle is slightly lower than in the saturated region. This suggests diminishing returns and possibly mild surface modification or densification, whereas the 1–2 s region represents stable self-limiting growth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Longer plasma exposures increase process time and energy use without improving growth. They can also introduce unwanted effects such as surface damage or slight material removal. Operating near the saturation point gives the same growth efficiency while keeping the process faster and more stable.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG2_d.jpg","caption":"(d) FIG. 2. Saturation curves: GPC as a function of (a) precursor $(\\mathrm{Alanis}^{\\mathrm{TM}})$ dosing, (b) precursor $(\\mathrm{Alanis}^{\\mathrm{TM}})$ purge, (c) oxygen plasma exposure, and (d) oxygen plasma purge at a deposition temperature of $150^{\\circ}\\mathrm{C}$ . The solid lines through the data points in (a) and (c) are Langmuir isotherm fits. The determined saturation GPC value is indicated by the dotted black line.","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG2_d","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG2_d","subset":"scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG2_d.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG2_d.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":703,"height":541,"image_format":"jpeg","image_sha256":"03ec36c307e4db0103e7f34ddf2938dc2aa46427eaff6cd1819817ac8b0aaabe","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":702,"height":537}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot shows growth per cycle as a function of oxygen plasma purge time. Growth values cluster around ~0.29 Å/cycle across the entire purge range. A vertical marker at about 2 seconds indicates the minimum purge time needed to reach saturation. Beyond this point, increasing the oxygen plasma purge does not change the growth per cycle, confirming that the process is self-limiting and fully purged.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Oxygen plasma purge (s) | Growth per cycle (Å) |\\n|---|---|\\n| 0 | 0.28 ± 0.02 |\\n| 1 | 0.29 ± 0.02 |\\n| 2 | 0.27 ± 0.02 |\\n| 5 | 0.29 ± 0.02 |\\n| 8 | 0.26 ± 0.02 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Once residual reactants and by-products are removed from the chamber, the surface reactions are already complete. Additional plasma purge time does not change the surface chemistry, so the growth per cycle remains constant.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Growth per cycle is essentially the same within error across all purge times.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A stable growth per cycle indicates that surface reactions reach saturation each cycle and are not limited by incomplete oxidation or residual species. This suggests uniform and reproducible surface chemistry.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Using a purge time longer than necessary increases cycle time without improving film quality. Identifying the shortest purge that achieves saturation allows faster processing while maintaining consistent growth.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_4.jpg","caption":"Figure 4. Calculated potential energy profiles for the dissociative chemisorption of DSBAS.","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_4","subset":"scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":600,"height":314,"image_format":"jpeg","image_sha256":"56e0f79dfce3dab7fc5b4cc3ab78ba930244a198f098cdcd3ab97335bde70b69","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":600,"height":314}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A reaction scheme illustrating the energy changes along a reaction pathway.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Pathway | Energy (kcal/mol) |\\n|------------------|------------------|\\n| R(g) | 0 |\\n| R | -6.7 |\\n| TS | -0.6 |\\n| P | -15 |\\n| P(g) | -14.2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Surface reaction energy = -8.7 kcal/mol\\n2. Overall reaction energy = -14.6 kcal/mol\\n3. Activation barrier = Overall reaction energy - Surface reaction energy= 6.1 kcal/mol\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Substantially higher barrier of 44.9 kcal/mol is due to the large separation between the two adjacent OH surface species and the requirement to transfer the H atom from the O2-type OH group to the O1 atom in the transitionstate structure.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"All calculations were performed with the Vienna ab initio simulation package (VASP)\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_9.jpg","caption":"Figure 9. Calculated energy diagram for the oxidation process of the $-\\mathrm{SiH}_3$ species.","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_9","subset":"scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"scatter plot"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":606,"height":425,"image_format":"jpeg","image_sha256":"c04e8365138b6077a6d87c37e68009de629ced1fcf27bc49f6c46b9213b40458","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":606,"height":425}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image relates the reaction pathway and energy in kcal involving ozone (O₃) and oxygen (O₂). It includes transition states (TS) and reaction steps (R) with corresponding energy values.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Pathway | Energy (kcal/mol) |\\n|------------------|------------------|\\n| 3O₃(g) | 0 |\\n| R1 | - 1.1 |\\n| TS1 | 11.6 |\\n| P1/R1 | -111.6 |\\n| TS2 | -100 |\\n| P2/R3 | -221.6 |\\n| TS3 | -211.1 |\\n| P3 | -330.5 |\\n| 3O₂(g) | -314.2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The oxidation process is strongly exothermic with a thermochemical energy of 109.3 kcal/mol and a modest activation barrier of 12.7 kcal/mol\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Three oxidation steps are shown\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ground electronic states of O3 and O2 are singlet and triplet, respectively. As the reaction proceeds, the ground state of the reactant (R1)\\nchanges from a singlet state to a triplet state of the product (P1). At the transition state, the O2 molecule is not fully formed as it still maintains a significantly elongated bond with the Oc atom and hence transition state remains singlet. Thus next oxidation step is the change of spin states from R2 to P2 via TS2. The ground electronic states of R3 and TS3 remain to be singlet, while the ground state of the final product P3 is triplet.\"}]}]"} -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_4.jpg","caption":"Figure 4. (a) Mass change after TMA exposure $(\\Delta M_{\\mathrm{TMA}})$ versus TMA exposure time at $300^{\\circ}C$ (b) Mass change after HF exposure $(\\Delta M_{\\mathrm{HF}})$ versus HF exposure time at $300^{\\circ}C$","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_4","subset":"scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":675,"height":769,"image_format":"jpeg","image_sha256":"8d1df113e2fe7a76dbf7a07895ccdbc3e33afdfa5172e31a04302449aaafbba0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":6,"width":670,"height":368},{"panel_id":"b","x":0,"y":381,"width":672,"height":388}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"ΔM_TMA versus TMA exposure time at 300°C. The mass loss increases with exposure time and approaches self-limiting behavior at approximately −29 ng/cm² after 2.0 s. The slow approach to saturation suggests that an initial fraction of the AlF₃ layer is easily removed, but complete removal becomes progressively more difficult.\"},{\"panel_id\":\"b\",\"text\":\"ΔM_HF versus HF exposure time at 300°C. The mass gain increases rapidly and saturates at ~13 ng/(cm² cycle) after about 1.0 s exposure. This sharp saturation indicates that HF fluorinates the Al₂O₃ surface to form a passivating AlF₃ layer that prevents further reaction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TMA exposure time (s) | ΔM_TMA (ng/cm²·cycle) |\\n| --------------------- | --------------------- |\\n| 0.0 | ~0 |\\n| 0.5 | ~-6 |\\n| 1.0 | ~-10 |\\n| 1.5 | ~-12 |\\n| 2.0 | ~-14 |\\n| 2.5 | ~-15 |\"},{\"panel_id\":\"b\",\"text\":\"| HF exposure time (s) | ΔM_HF (ng/cm²·cycle) |\\n| -------------------- | -------------------- |\\n| 0.0 | ~0 |\\n| 0.5 | ~10 |\\n| 1.0 | ~14 |\\n| 1.5 | ~15 |\\n| 2.0 | ~16 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is possible to determine the exposure times required to achieve the reaction's self-limiting behavior.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mass change after TMA exposure decreases while TMA exposure increases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2.0 s of TMA exposure.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This could be related to the difficulty of removing the AlF3 species from the surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The last two data points have the same value and overall the mass change seems to saturate towards this value, so yes.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the trend is not linear.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plateau indicates that the reaction between the TMA precursor and the surface has reached saturation. This means that after a certain exposure time (around 2 seconds), all available reactive sites on the surface have been consumed, and further exposure to TMA does not lead to any significant additional mass change. This self-limiting behavior is a hallmark of ALD and ALE half-cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mass change increases rapidly from 0 to about +12 ng/(cm²·cycle) within the first 0.5 seconds of exposure.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Self-limiting reactions are essential because they ensure that each half-cycle removes or modifies only a defined amount of material, regardless of excess reactant exposure. This enables precise thickness control at the atomic scale and allows for conformal, isotropic etching of three-dimensional structures. Without self-limiting behavior, the etch rate would depend on exposure time and local reactant flux, making uniform etching impossible.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF saturates sharply after ~1.0 s, while TMA approaches saturation more slowly and gradually levels off after ~2.0 s.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The AlF₃ layer passivates the Al₂O₃ surface because it has a Pilling-Bedworth ratio (R_PB) greater than 1, specifically ~1.8. This means the AlF₃ layer occupies more volume than the Al₂O₃ it replaces, ensuring complete surface coverage without gaps. Once formed, this continuous fluoride layer prevents HF from accessing the underlying oxide, analogous to how native oxide layers protect metals from further oxidation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2.0 s for TMA and 1.0 s for HF, corresponding to the \\\"2-30-1-30\\\" reaction sequence.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Run multiple ALE cycles at a fixed temperature (300°C) and HF exposure time.\\n\\n2. For each set of cycles, use a different, precisely controlled TMA exposure time (e.g., 0.5 s, 1.0 s, 1.5 s, 2.0 s).\\n\\n3. Measure the mass change per cycle (ΔM) for each TMA time using QCM.\\n\\n4. Plot ΔM(TMA) vs. TMA Exposure Time to identify the saturation point.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The shorter, non-saturating time (0.5 s) is better for minimizing cycle time. The trade-off is a lower etch per cycle and potentially incomplete surface reactions, which could lead to non-uniform etching, residue accumulation, and poor process control over many cycles compared to the stable, saturated regime.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing TMA exposure time initially makes the etch more complete, removing more of the fluorinated layer per cycle, as shown by the increasingly negative ΔM(TMA). Saturation occurs because the reaction is self-limiting; once all the AlF₃ sites formed during the prior HF step have reacted, additional TMA cannot further increase the etch amount, leading to a constant ΔM.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Self-limiting behavior at ΔMTMA = −29 ng/cm2 is observed after 2.0 s of TMA exposure. This slow approach to self-limiting behavior may result from the difficulty in removing all of the AlF3 surface layer. An initial fraction of the AlF3 surface layer may be easily removed by TMA. The removal of more of the AlF3 surface layer may then become progressively difficult.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"According to the authors, 13 ng/cm^2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"According to the authors, -29 ng/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For both experiments, the temperature was kept at 300 °C and the ALE cycle always consisted of TMA exposure, purge, HF exposure and purge. For the experiments, the times of these individual steps can be represented as follows:\\n1) x - 30 - 1 - 30\\n2) 2 - 30 - x - 30\\nWhere x denotes the variable time.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During TMA exposure, the initial layer of AlF3 is removed readily, but this gets progressively difficult as AlF3 disappears. The authors state that temperature plays a role here, which was also investigated. They already reveal that this AlF3 layer is not entirely removed, even at the highest temperatures. During HF exposure, something similar occurs where the initial AlF3 layer is quickly formed, but after a certain point, the formed AlF3 layer passivates the reaction between Al2O3 and HF.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TMA half-cycle appears more kinetically limited because ΔMTMA approaches its plateau much more slowly than ΔMHFTMA approaches its plateau much more slowly than ΔMHFs).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Γᵢ/Γₙ | AR | Ion Bombard (ML) | Passivation (ML) | Total Etch Depth (ML) | % Ion Bombard |\\n|---------|-----|-------------------|-------------------|-------------------------|---------------|\\n| 10⁻⁴ | 10 | 1.0 | 0.0 | 1.0 | 99 |\\n| 10⁻⁴ | 2 | 1.0 | 0.0 | 1.0 | 99 |\\n| 10⁻³ | 10 | 1.0 | 0.04 | 1.04 | 96 |\\n| 10⁻³ | 2 | 1.0 | 0.04 | 1.04 | 96 |\\n| 0.01 | 10 | 1.1 | 0.4 | 1.5 | 76 |\\n| 0.01 | 2 | 1.1 | 0.6 | 1.7 | 76 |\\n| 0.02 | 10 | 1.1 | 0.7 | 1.8 | 62 |\\n| 0.02 | 2 | 1.1 | 1.0 | 2.1 | 63 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For Γᵢ/Γₙ >10^-3, etching during the ion bombardment phase results in removal of more than 1ML. The conditions of the ion bombardment phase\\nare the same as for the ideal case, so in principle the ion bombardment phase is intrinsically self-limited. The extra etching producing>1ML per cycle results from roughness produced by the nonideal passivation phase. Since this etching mechanism is self-limited, it cannot lower Sy during the ion bombardment phase. In fact, extending the ion bombardment phase will not introduce more etching per cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This correlation between surface roughness and increased material removed per cycle does not necessarily introduce nonideality since the self-limited nature of the etch process is retained. However, this coupling of surface roughness and Sy could jeopardize etch uniformity and aspect ratio independence if the surface roughness depends on etch time or aspect ratio.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Γᵢ/Γₙ> 0 the EPC is different for the AR 2 and AR 10 features.\\n2. Ion fluxes during the passivation phase reintroduce an ARDE which was absent in the ideal case.\\n3. ALE synergy, Sy, does not have the same dependence on AR, being nearly constant for both ARs over the entire range of Γᵢ/Γₙ studied.\\n4. Etching the AR 10 feature resulted in a lower EPC than the AR 2 feature in spite of having the same Sy\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_7.jpg","caption":"FIG. 7. (Color online) Etch depth per cycle due to ideal (reactions which occur through ALE synergy) and nonideal (continuous) etching for cases with 1, 10, and $100\\mathrm{ppm}$ $\\mathrm{Cl}_2$ in the ion bombardment step, for both $\\mathrm{AR} = 2$ and 10 trenches. The dotted line represents ideal ALE, with an etch depth per cycle of $1\\mathrm{ML}$","id":"train/atomic-layer-etching/simulation-usecase/3/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_7","subset":"stacked-bar-chart","split":"train","classification":[{"panel_id":"a","label":"stacked bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"stacked bar chart","caption_source":"content.json:img_caption"},"width":569,"height":530,"image_format":"jpeg","image_sha256":"c85e37c2797306de366aadf7473027803d0c47d130ef74a052681218b9c77453","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":8,"width":568,"height":519}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the etch depth per cycle for different Cl2 concentrations at both non-ideal and ideal conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cl₂ (ppm) | AR | Ideal (ML) | Non-Ideal (ML) | Total Etch Depth (ML) | % Ideal |\\n|-----------|-----|------------|-----------------|-------------------------|---------|\\n| 1 | 10 | 1.0 | 0.0 | 1.0 | 100 |\\n| 1 | 2 | 1.0 | 0.02 | 1.02 | 98 |\\n| 10 | 10 | 1.0 | 0.01 | 1.01 | 99 |\\n| 10 | 2 | 1.0 | 0.06 | 1.06 | 94 |\\n| 100 | 10 | 1.0 | 0.08 | 1.08 | 92 |\\n| 100 | 2 | 1.0 | 0.4 | 1.4 | 71 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In addition to nonidealities caused by ions during the passivation phase, nonidealities can also occur by chlorine fluxes onto the wafer during the ion bombardment phase, a condition that can also result in continuous etching.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"While long purge times can be used to eliminate most of the gas phase Cl remaining in the chamber from the passivation phase, etch products released from the wafer during the ion bombardment phase are themselves chlorine containing. These etch products can be dissociated by electron impact in the plasma, or they can deposit on the chamber walls which can then act as a source of Cl radicals under ion bombardment. Cl may also be adsorbed onto any surface in contact with the plasma during the passivation phase, and desorb during the etching phase. While the actual source of Cl radicals during the ion bombardment phase is likely not Cl2 gas in the feedstock gases, it is convenient to quantify the level of Cl contamination by parts-per-million (ppm) of Cl2 in the gas phase.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"That increasing concentrations of Cl2 result in increased EPC and decreased Sy due to the continuous etching enabled by even these small Cl fluxes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"the HPEM was used to calculate the Cl flux to the surface of the wafer when the feedstock Ar gas contained 1, 10, and 100 ppm of Cl2.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_9.jpg","caption":"FIG. 9. (Color online) Etch depth per cycle for physical and chemical sputtering processes for values of $\\epsilon_{m} = 50$ , 55, 60 and 65 in the ion bombard step, for both $\\mathrm{AR} = 2$ and 10 trenches. The dotted line represents ideal ALE, with an etch depth per cycle of 1 ML.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_9","subset":"stacked-bar-chart","split":"train","classification":[{"panel_id":"a","label":"stacked bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"stacked bar chart","caption_source":"content.json:img_caption"},"width":577,"height":536,"image_format":"jpeg","image_sha256":"ab3a92df3df5e72a1d9d61e446ca98063cf9865361257f28ebb9b99cb4e830b2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":571,"height":530}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The stacked bar chart illustrates the etch depth per cycle for Physical (Si) and Chemical sputtering processes at different aspect ratios (AR) and epsilonmax values.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ε (eV) | AR | Chemical (SiClₓ) (ML) | Physical (Si) (ML) | Total Etch Depth (ML) | % Chemical |\\n|--------|-----|-------------------------|----------------------|-------------------------|------------|\\n| 50 | 10 | 1.0 | 0.0 | 1.0 | 100 |\\n| 50 | 2 | 1.0 | 0.0 | 1.0 | 100 |\\n| 55 | 10 | 1.1 | 0.1 | 1.2 | 89 |\\n| 55 | 2 | 1.1 | 0.1 | 1.2 | 92 |\\n| 60 | 10 | 1.2 | 0.3 | 1.5 | 79 |\\n| 60 | 2 | 1.2 | 0.35 | 1.55 | 85 |\\n| 65 | 10 | 1.2 | 0.5 | 1.7 | 71 |\\n| 65 | 2 | 1.2 | 0.6 | 1.8 | 80 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Another nonideality is having ions with energies greater than Ethermal for physical sputtering during the ion bombardment phase\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ion energy and angle distribution\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With em>50 eV, the distribution contains ions with energies high enough to sputter bare silicon, introducing a continuous etching mechanism due to physical sputtering. Even having a small fraction of the ions with energies greater than the Si sputtering regime produce significant nonideality with these pulse times, with Sy decreasing to 71% for em=65 eV in the AR=10 feature.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, this nonideality does not result in significant ARDE\"}]}]"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_1.jpg","caption":"Figure 1. Annually published ALD and ALD/MLD articles involving rare earth elements from 1992 to 2023. The publications were searched from Scopus and Web of Science, using search terms that included \"atomic layer deposition\" and \"rare earth\", or \"atomic layer deposition\" and \"lanthanide\". The data thus acquired were further manually refined to check for numbers as accurate as possible. Data were accessed lastly on 10-02-2024.","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_1","subset":"stacked-bar-chart","split":"train","classification":[{"panel_id":"a","label":"stacked bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart shows the number of articles published over time, categorized by ALD and ALD/MLD. The number of ALD articles increases significantly over the years, peaking twice, first in 2009, then decreasing and peaking again in 2023, while ALD/MLD articles only start growing in more recent years.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Year | ALD (Red) | ALD/MLD (Blue) | Total Articles |\\n|---|---|---|---|\\n| 1992 | 1 | 0 | 1 |\\n| 1994 | 2 | 0 | 2 |\\n| 1997 | 3 | 0 | 3 |\\n| 1998 | 2 | 0 | 2 |\\n| 1999 | 1 | 0 | 1 |\\n| 2001 | 7 | 0 | 7 |\\n| 2002 | 1 | 0 | 1 |\\n| 2003 | 3 | 0 | 3 |\\n| 2004 | 8 | 0 | 8 |\\n| 2005 | 12 | 0 | 12 |\\n| 2006 | 10 | 0 | 10 |\\n| 2007 | 14 | 0 | 14 |\\n| 2008 | 18 | 0 | 18 |\\n| 2009 | 21 | 0 | 21 |\\n| 2010 | 16 | 0 | 16 |\\n| 2011 | 6 | 0 | 6 |\\n| 2012 | 10 | 0 | 10 |\\n| 2013 | 5 | 0 | 5 |\\n| 2014 | 12 | 0 | 12 |\\n| 2015 | 5 | 1 | 6 |\\n| 2016 | 2 | 1 | 3 |\\n| 2017 | 4 | 1 | 5 |\\n| 2018 | 9 | 1 | 10 |\\n| 2019 | 7 | 1 | 8 |\\n| 2020 | 13 | 1 | 14 |\\n| 2021 | 12 | 2 | 14 |\\n| 2022 | 7 | 2 | 9 |\\n| 2023 | 18 | 4 | 22 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ALD\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It distinguishes growth in conventional inorganic ALD literature from growth in hybrid organic inorganic ALD/MLD work. That separation helps the reader see that most of the field’s publication volume is still driven by ALD, while ALD/MLD is a smaller but emerging component that becomes visible mainly in more recent years.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The x axis is Year, and the y axis is Number of articles.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":664,"height":481}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"stacked bar chart","caption_source":"content.json:image_caption"},"width":667,"height":486,"image_format":"jpeg","image_sha256":"4d9de0d99eb7e9bc8f1a18d749153b216e46cc1bd25143d7a52daed1b52990d9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_9_figure_10.jpg","caption":"Figure 10. Calibration of energies of the first densifications.","id":"train/atomic-layer-deposition/simulation-usecase/9/figure_10","sample_id":"atomic-layer-deposition/simulation-usecase/9/figure_10","subset":"stacked-bar-chart","split":"train","classification":[{"panel_id":"a","label":"stacked bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows how film coverage and crystallinity change with the densification barrier energy. At low barrier values (below about 1.3 eV), coverage stays around half of the surface and crystallinity remains low. When the barrier reaches about 1.4 eV and higher, both coverage and crystallinity increase quickly. At the highest barrier values, both approach about 80–90%, which matches the experimental target shown by the dashed line. This means higher densification barriers strongly improve film ordering.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Densification barrier (eV) | Coverage (%) | Crystallinity (%) |\\n|----------------------------|--------------|-------------------|\\n| 0.3 | ~54 | ~15 |\\n| 0.4 | ~54 | ~15 |\\n| 0.5 | ~54 | ~15 |\\n| 0.6 | ~50 | ~11 |\\n| 0.7 | ~51 | ~12 |\\n| 0.8 | ~52 | ~14 |\\n| 0.9 | ~54 | ~15 |\\n| 1.0 | ~54 | ~15 |\\n| 1.1 | ~52 | ~14 |\\n| 1.2 | ~53 | ~15 |\\n| 1.3 | ~54 | ~19 |\\n| 1.4 | ~61 | ~33 |\\n| 1.5 | ~80 | ~70 |\\n| 1.6 | ~87 | ~85 |\\n| 1.7 | ~88 | ~87 |\\n| 1.8 | ~90 | ~90 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It indicates the onset of extensive atomic rearrangement that enables both surface completion and ordering into a more crystalline network.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Coverage stays around 50%\\n, -Crystallinity remains low\\n, -Film ordering is weak\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure shows the minimum barrier needed to achieve high crystallinity. Process settings such as temperature, energy input, or activation methods can be adjusted to reach this barrier. This helps achieve good film quality without using more energy than necessary.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Higher barriers allow atoms to move and rearrange more before becoming fixed in place. This extra movement helps atoms find better positions, which leads to a more ordered structure. As a result, crystallinity increases rapidly once the barrier is high enough.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":1,"width":673,"height":357}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/A. Dkhissi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"stacked bar chart","caption_source":"content.json:img_caption"},"width":675,"height":359,"image_format":"jpeg","image_sha256":"8243db57db440e6300ae6286a6a6a6883312f41eb007adaf143f13348d13c2e0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_9_figure_9.jpg","caption":"Figure 9. Evolution of coverage rates $\\mathrm{HfO_2}$ coverage) and crystallinity with different initial substrates.","id":"train/atomic-layer-deposition/simulation-usecase/9/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/9/figure_9","subset":"stacked-bar-chart","split":"train","classification":[{"panel_id":"a","label":"stacked bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows how HfO₂ coverage and crystallinity change when the amount and arrangement of surface hydroxyl (OH) groups are varied. As the percentage of randomly placed OH groups increases, the crystalline part and total crystallinity increase strongly. The surface with 100% random OH gives the highest crystallinity. In contrast, OH groups placed mainly on dimers give much lower crystallinity, even though the OH amount is moderate. This shows that how OH groups are arranged on the surface is as important as how many are present.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| % Hydroxyls Groups | Crystallinity (%) | Cryst. Groups (%) | Non-Cryst. Groups (%) |\\n|---------------------------|-------------------|-------------------|------------------------|\\n| 25% random OH | ~20 | ~17 | ~14 |\\n| 50% random OH | ~38 | ~32 | ~20 |\\n| 75% random OH | ~57 | ~43 | ~18 |\\n| 100% random OH | ~76 | ~56 | ~14 |\\n| Random OH on dimers (47%) | ~23 | ~30 | ~24 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Random OH surfaces\\n, -Fully random OH surface\\n, -OH on dimers surface\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 100% random OH surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"On the dimer surface, OH groups are clustered together instead of being spread out. This limits where growth can start and keeps reactions confined to small areas. Because of this, many regions remain disordered, and fewer large crystalline regions can form.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"More random OH groups give more evenly spread reaction sites on the surface. This allows incoming precursor molecules to attach at many places instead of a few spots. As a result, growth becomes more uniform and connected, which helps crystalline regions form and expand.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":674,"height":417}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/A. Dkhissi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"stacked bar chart","caption_source":"content.json:img_caption"},"width":675,"height":423,"image_format":"jpeg","image_sha256":"49dbc13b090338559b68a546275f1c71475622b17850f2caa8fc774a89b5fb96","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_4.jpg","caption":"FIG. 4. (Color online) Etch depth per cycle in the passivation and ion bombardment phase for values of $\\Gamma_{i} / \\Gamma_{n} = 0.02$ , 0.01, $10^{-3}$ , and $10^{-4}$ in the passivation step, for both $\\mathrm{AR} = 2$ and 10 trenches. The dotted line represents ideal ALE, with an etch depth per cycle of $1\\mathrm{ML}$ .","id":"train/atomic-layer-etching/simulation-usecase/3/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_4","subset":"stacked-bar-chart","split":"train","classification":[{"panel_id":"a","label":"stacked bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The stacked bar chart displays the etch depth per cycle in monolayers against AR values for two methods, Passivation and Ion Bombarded, across different aspect ratios (AR) and gamma ratios (Γ′/Γ′s).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Γᵢ/Γₙ | AR | Ion Bombard (ML) | Passivation (ML) | Total Etch Depth (ML) | % Ion Bombard |\\n|---------|-----|-------------------|-------------------|-------------------------|---------------|\\n| 10⁻⁴ | 10 | 1.0 | 0.0 | 1.0 | 99 |\\n| 10⁻⁴ | 2 | 1.0 | 0.0 | 1.0 | 99 |\\n| 10⁻³ | 10 | 1.0 | 0.04 | 1.04 | 96 |\\n| 10⁻³ | 2 | 1.0 | 0.04 | 1.04 | 96 |\\n| 0.01 | 10 | 1.1 | 0.4 | 1.5 | 76 |\\n| 0.01 | 2 | 1.1 | 0.6 | 1.7 | 76 |\\n| 0.02 | 10 | 1.1 | 0.7 | 1.8 | 62 |\\n| 0.02 | 2 | 1.1 | 1.0 | 2.1 | 63 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For Γᵢ/Γₙ >10^-3, etching during the ion bombardment phase results in removal of more than 1ML. The conditions of the ion bombardment phase\\nare the same as for the ideal case, so in principle the ion bombardment phase is intrinsically self-limited. The extra etching producing>1ML per cycle results from roughness produced by the nonideal passivation phase. Since this etching mechanism is self-limited, it cannot lower Sy during the ion bombardment phase. In fact, extending the ion bombardment phase will not introduce more etching per cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This correlation between surface roughness and increased material removed per cycle does not necessarily introduce nonideality since the self-limited nature of the etch process is retained. However, this coupling of surface roughness and Sy could jeopardize etch uniformity and aspect ratio independence if the surface roughness depends on etch time or aspect ratio.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Γᵢ/Γₙ> 0 the EPC is different for the AR 2 and AR 10 features.\\n2. Ion fluxes during the passivation phase reintroduce an ARDE which was absent in the ideal case.\\n3. ALE synergy, Sy, does not have the same dependence on AR, being nearly constant for both ARs over the entire range of Γᵢ/Γₙ studied.\\n4. Etching the AR 10 feature resulted in a lower EPC than the AR 2 feature in spite of having the same Sy\"}]}]","bbox":[{"panel_id":"a","x":3,"y":7,"width":573,"height":532}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"stacked bar chart","caption_source":"content.json:img_caption"},"width":577,"height":539,"image_format":"jpeg","image_sha256":"2f4733da8c379e6b49a064f632ba0414b6e77b04f834f9aceca5a8eaacf59e82","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_7.jpg","caption":"FIG. 7. (Color online) Etch depth per cycle due to ideal (reactions which occur through ALE synergy) and nonideal (continuous) etching for cases with 1, 10, and $100\\mathrm{ppm}$ $\\mathrm{Cl}_2$ in the ion bombardment step, for both $\\mathrm{AR} = 2$ and 10 trenches. The dotted line represents ideal ALE, with an etch depth per cycle of $1\\mathrm{ML}$","id":"train/atomic-layer-etching/simulation-usecase/3/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_7","subset":"stacked-bar-chart","split":"train","classification":[{"panel_id":"a","label":"stacked bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the etch depth per cycle for different Cl2 concentrations at both non-ideal and ideal conditions.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cl₂ (ppm) | AR | Ideal (ML) | Non-Ideal (ML) | Total Etch Depth (ML) | % Ideal |\\n|-----------|-----|------------|-----------------|-------------------------|---------|\\n| 1 | 10 | 1.0 | 0.0 | 1.0 | 100 |\\n| 1 | 2 | 1.0 | 0.02 | 1.02 | 98 |\\n| 10 | 10 | 1.0 | 0.01 | 1.01 | 99 |\\n| 10 | 2 | 1.0 | 0.06 | 1.06 | 94 |\\n| 100 | 10 | 1.0 | 0.08 | 1.08 | 92 |\\n| 100 | 2 | 1.0 | 0.4 | 1.4 | 71 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In addition to nonidealities caused by ions during the passivation phase, nonidealities can also occur by chlorine fluxes onto the wafer during the ion bombardment phase, a condition that can also result in continuous etching.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"While long purge times can be used to eliminate most of the gas phase Cl remaining in the chamber from the passivation phase, etch products released from the wafer during the ion bombardment phase are themselves chlorine containing. These etch products can be dissociated by electron impact in the plasma, or they can deposit on the chamber walls which can then act as a source of Cl radicals under ion bombardment. Cl may also be adsorbed onto any surface in contact with the plasma during the passivation phase, and desorb during the etching phase. While the actual source of Cl radicals during the ion bombardment phase is likely not Cl2 gas in the feedstock gases, it is convenient to quantify the level of Cl contamination by parts-per-million (ppm) of Cl2 in the gas phase.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"That increasing concentrations of Cl2 result in increased EPC and decreased Sy due to the continuous etching enabled by even these small Cl fluxes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"the HPEM was used to calculate the Cl flux to the surface of the wafer when the feedstock Ar gas contained 1, 10, and 100 ppm of Cl2.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":8,"width":568,"height":519}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"stacked bar chart","caption_source":"content.json:img_caption"},"width":569,"height":530,"image_format":"jpeg","image_sha256":"c85e37c2797306de366aadf7473027803d0c47d130ef74a052681218b9c77453","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_9.jpg","caption":"FIG. 9. (Color online) Etch depth per cycle for physical and chemical sputtering processes for values of $\\epsilon_{m} = 50$ , 55, 60 and 65 in the ion bombard step, for both $\\mathrm{AR} = 2$ and 10 trenches. The dotted line represents ideal ALE, with an etch depth per cycle of 1 ML.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_9","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_9","subset":"stacked-bar-chart","split":"train","classification":[{"panel_id":"a","label":"stacked bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The stacked bar chart illustrates the etch depth per cycle for Physical (Si) and Chemical sputtering processes at different aspect ratios (AR) and epsilonmax values.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ε (eV) | AR | Chemical (SiClₓ) (ML) | Physical (Si) (ML) | Total Etch Depth (ML) | % Chemical |\\n|--------|-----|-------------------------|----------------------|-------------------------|------------|\\n| 50 | 10 | 1.0 | 0.0 | 1.0 | 100 |\\n| 50 | 2 | 1.0 | 0.0 | 1.0 | 100 |\\n| 55 | 10 | 1.1 | 0.1 | 1.2 | 89 |\\n| 55 | 2 | 1.1 | 0.1 | 1.2 | 92 |\\n| 60 | 10 | 1.2 | 0.3 | 1.5 | 79 |\\n| 60 | 2 | 1.2 | 0.35 | 1.55 | 85 |\\n| 65 | 10 | 1.2 | 0.5 | 1.7 | 71 |\\n| 65 | 2 | 1.2 | 0.6 | 1.8 | 80 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Another nonideality is having ions with energies greater than Ethermal for physical sputtering during the ion bombardment phase\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Ion energy and angle distribution\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With em>50 eV, the distribution contains ions with energies high enough to sputter bare silicon, introducing a continuous etching mechanism due to physical sputtering. Even having a small fraction of the ions with energies greater than the Si sputtering regime produce significant nonideality with these pulse times, with Sy decreasing to 71% for em=65 eV in the AR=10 feature.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, this nonideality does not result in significant ARDE\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":571,"height":530}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"stacked bar chart","caption_source":"content.json:img_caption"},"width":577,"height":536,"image_format":"jpeg","image_sha256":"ab3a92df3df5e72a1d9d61e446ca98063cf9865361257f28ebb9b99cb4e830b2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/stacked-spectra-chart/test/metadata.jsonl b/subsets/stacked-spectra-chart/test/metadata.jsonl index 76aef774c4fd5f1aa24f760c69a09cec668d6b43..72df5c28860ae05504e453dedd0e676baf54ea49 100644 --- a/subsets/stacked-spectra-chart/test/metadata.jsonl +++ b/subsets/stacked-spectra-chart/test/metadata.jsonl @@ -1,27 +1,27 @@ -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_8.jpg","caption":"Figure 8. XRR scans for $\\mathrm{Al}_2\\mathrm{O}_3$ ALD films grown on $\\mathrm{Si}(100)$ using $300$ reaction cycles versus growth temperature from 33 to $177^{\\circ}\\mathrm{C}$ . The fits to the XRR data used to determine densities are shown by the solid lines.","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_8","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":481,"height":411,"image_format":"jpeg","image_sha256":"5de9b4fa9feb19fc047739f89997c11a48f31f4c83776a63d2bc9f843a0a6683","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":481,"height":411}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays X‑ray reflectivity (XRR) intensity versus incident angle for films grown at different temperatures from 33 to 177 °C. The dots indicate experimental data, and the solid lines indicate fitted curves used to extract film density and thickness.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Source | θ (degrees) | Intensity (a.u.) |\\n|---| ---| ---| ---| \\n| 33 | Experimental | 0.05 | 27685.5733 |\\n| 33 | Experimental | 0.21 | 118369.3974 |\\n| 33 | Experimental | 0.27 | 7090.946772 |\\n| 33 | Experimental | 0.32 | 5160.313139 |\\n| 33 | Experimental | 0.39 | 1263.014832 |\\n| 33 | Experimental | 0.42 | 1263.014832 |\\n| 33 | Experimental | 0.48 | 282 |\\n| 33 | Experimental | 0.53 | 371 |\\n| 33 | Experimental | 0.59 | 76 |\\n| 33 | Experimental | 0.66 | 149.5023046 |\\n| 33 | Experimental | 0.73 | 27.86572986 |\\n| 33 | Experimental | 0.79 | 66.02650509 |\\n| 33 | Experimental | 0.86 | 8 |\\n| 33 | Experimental | 0.93 | 32 |\\n| 33 | Experimental | 0.99 | 15 |\\n| 33 | Experimental | 1.06 | 1 |\\n| 33 | Experimental | 1.12 | 1 |\\n| 33 | Experimental | 1.19 | 9 |\\n| 33 | Experimental | 1.25 | 0 |\\n| 33 | Experimental | 1.32 | 0 |\\n| 33 | Experimental | 1.38 | 0 |\\n| 33 | Fit | 0.01 | 186390 |\\n| 33 | Fit | 0.21 | 195048 |\\n| 33 | Fit | 0.28 | 6475.41498 |\\n| 33 | Fit | 0.32 | 4303.311825 |\\n| 33 | Fit | 0.37 | 1102.182525 |\\n| 33 | Fit | 0.42 | 1206.952395 |\\n| 33 | Fit | 0.48 | 295.4081924 |\\n| 33 | Fit | 0.52 | 370.6927434 |\\n| 33 | Fit | 0.60 | 72.30276894 |\\n| 33 | Fit | 0.67 | 130.4646813 |\\n| 33 | Fit | 0.73 | 22.20643655 |\\n| 33 | Fit | 0.79 | 69.09340882 |\\n| 33 | Fit | 0.86 | 6.820289616 |\\n| 33 | Fit | 0.92 | 29.16008143 |\\n| 33 | Fit | 0.99 | 2.293841366 |\\n| 33 | Fit | 1.05 | 13.47651082 |\\n| 33 | Fit | 1.12 | 0.884054162 |\\n| 33 | Fit | 1.19 | 8.178545165 |\\n| 33 | Fit | 1.25 | 0.311141361 |\\n| 33 | Fit | 1.32 | 4.743035094 |\\n| 33 | Fit | 1.38 | 0.28413264 |\\n| 58 | Experimental | 0.04 | 1046449.584 |\\n| 58 | Experimental | 0.22 | 4899376.842 |\\n| 58 | Experimental | 0.27 | 308964.918 |\\n| 58 | Experimental | 0.31 | 293498.3296 |\\n| 58 | Experimental | 0.35 | 38043.60731 |\\n| 58 | Experimental | 0.41 | 49956.44773 |\\n| 58 | Experimental | 0.46 | 7764.989004 |\\n| 58 | Experimental | 0.52 | 12227.1135 |\\n| 58 | Experimental | 0.58 | 1584.893192 |\\n| 58 | Experimental | 0.64 | 4516.425774 |\\n| 58 | Experimental | 0.71 | 370.6927434 |\\n| 58 | Experimental | 0.77 | 1263.014832 |\\n| 58 | Experimental | 0.83 | 94.94340189 |\\n| 58 | Experimental | 0.89 | 486.770156 |\\n| 58 | Experimental | 0.95 | 38.29116603 |\\n| 58 | Experimental | 1.02 | 224.963819 |\\n| 58 | Experimental | 1.08 | 34.69398579 |\\n| 58 | Experimental | 1.15 | 103.9684115 |\\n| 58 | Experimental | 1.22 | 33.415169 |\\n| 58 | Experimental | 1.30 | 63.09573445 |\\n| 58 | Experimental | 1.39 | 22.20643655 |\\n| 58 | Fit | 0.01 | 7372344.717 |\\n| 58 | Fit | 0.22 | 7045102.627 |\\n| 58 | Fit | 0.27 | 336326.0939 |\\n| 58 | Fit | 0.31 | 321397.3117 |\\n| 58 | Fit | 0.35 | 43594.99375 |\\n| 58 | Fit | 0.40 | 47736.99142 |\\n| 58 | Fit | 0.46 | 7420.318303 |\\n| 58 | Fit | 0.52 | 11684.37895 |\\n| 58 | Fit | 0.58 | 1584.893192 |\\n| 58 | Fit | 0.64 | 3755.328103 |\\n| 58 | Fit | 0.70 | 370.6927434 |\\n| 58 | Fit | 0.76 | 1584.893192 |\\n| 58 | Fit | 0.83 | 94.94340189 |\\n| 58 | Fit | 0.89 | 465.1635045 |\\n| 58 | Fit | 0.95 | 43.87867665 |\\n| 58 | Fit | 1.01 | 246.3481447 |\\n| 58 | Fit | 1.08 | 36.59150579 |\\n| 58 | Fit | 1.15 | 103.9684115 |\\n| 58 | Fit | 1.22 | 31.9319435 |\\n| 58 | Fit | 1.29 | 66.02650509 |\\n| 58 | Fit | 1.38 | 43.87867665 |\\n| 80 | Experimental | 0.04 | 21920226.17 |\\n| 80 | Experimental | 0.21 | 93719720.76 |\\n| 80 | Experimental | 0.26 | 6147979.269 |\\n| 80 | Experimental | 0.30 | 5614302.058 |\\n| 80 | Experimental | 0.35 | 1000000 |\\n| 80 | Experimental | 0.39 | 1313136.458 |\\n| 80 | Experimental | 0.44 | 293498.3296 |\\n| 80 | Experimental | 0.51 | 307131.205 |\\n| 80 | Experimental | 0.56 | 57246.17566 |\\n| 80 | Experimental | 0.61 | 103296.2385 |\\n| 80 | Experimental | 0.67 | 15343.18399 |\\n| 80 | Experimental | 0.73 | 39810.71706 |\\n| 80 | Experimental | 0.79 | 3588.637388 |\\n| 80 | Experimental | 0.84 | 14011.31424 |\\n| 80 | Experimental | 0.91 | 1098.357236 |\\n| 80 | Experimental | 0.97 | 5400.00754 |\\n| 80 | Experimental | 1.04 | 639.1956383 |\\n| 80 | Experimental | 1.10 | 2279.011302 |\\n| 80 | Experimental | 1.14 | 699.9554873 |\\n| 80 | Experimental | 1.22 | 1321.681346 |\\n| 80 | Experimental | 1.28 | 699.9554873 |\\n| 80 | Experimental | 1.34 | 1006.507236 |\\n| 80 | Experimental | 1.40 | 769.185523 |\\n| 80 | Fit | 0.01 | 102628411.2 |\\n| 80 | Fit | 0.21 | 98072962.84 |\\n| 80 | Fit | 0.27 | 5365095.597 |\\n| 80 | Fit | 0.30 | 5365095.597 |\\n| 80 | Fit | 0.34 | 913194.6958 |\\n| 80 | Fit | 0.39 | 1254849.232 |\\n| 80 | Fit | 0.44 | 307131.205 |\\n| 80 | Fit | 0.50 | 336326.0939 |\\n| 80 | Fit | 0.56 | 57246.17566 |\\n| 80 | Fit | 0.61 | 108094.3058 |\\n| 80 | Fit | 0.67 | 13389.38296 |\\n| 80 | Fit | 0.73 | 38043.60731 |\\n| 80 | Fit | 0.79 | 3755.328103 |\\n| 80 | Fit | 0.85 | 15343.18399 |\\n| 80 | Fit | 0.91 | 961.830604 |\\n| 80 | Fit | 0.97 | 4712.370587 |\\n| 80 | Fit | 1.03 | 699.9554873 |\\n| 80 | Fit | 1.08 | 1900.52348 |\\n| 80 | Fit | 1.16 | 610.8231565 |\\n| 80 | Fit | 1.21 | 1206.952395 |\\n| 80 | Fit | 1.27 | 639.1956383 |\\n| 80 | Fit | 1.34 | 961.830604 |\\n| 80 | Fit | 1.40 | 769.185523 |\\n| 102 | Experimental | 0.04 | 176964977 |\\n| 102 | Experimental | 0.23 | 791756339.3 |\\n| 102 | Experimental | 0.26 | 71370892.35 |\\n| 102 | Experimental | 0.28 | 102628411.2 |\\n| 102 | Experimental | 0.33 | 13302818.38 |\\n| 102 | Experimental | 0.36 | 17468415.81 |\\n| 102 | Experimental | 0.42 | 2715206.202 |\\n| 102 | Experimental | 0.47 | 5365095.597 |\\n| 102 | Experimental | 0.52 | 761535.476 |\\n| 102 | Experimental | 0.57 | 1647788.276 |\\n| 102 | Experimental | 0.63 | 233691.309 |\\n| 102 | Experimental | 0.68 | 833924.5525 |\\n| 102 | Experimental | 0.73 | 75172.04032 |\\n| 102 | Experimental | 0.78 | 268021.1178 |\\n| 102 | Experimental | 0.85 | 31725.4982 |\\n| 102 | Experimental | 0.90 | 128325.7474 |\\n| 102 | Experimental | 0.96 | 16801.65693 |\\n| 102 | Experimental | 1.01 | 68646.70849 |\\n| 102 | Experimental | 1.07 | 9311.380725 |\\n| 102 | Experimental | 1.12 | 27685.5733 |\\n| 102 | Experimental | 1.18 | 7090.946772 |\\n| 102 | Experimental | 1.24 | 16055.86851 |\\n| 102 | Experimental | 1.30 | 4712.370587 |\\n| 102 | Experimental | 1.35 | 13131.36979 |\\n| 102 | Experimental | 1.38 | 7090.946772 |\\n| 102 | Fit | 0.02 | 1304646813 |\\n| 102 | Fit | 0.22 | 1138513090 |\\n| 102 | Fit | 0.26 | 81785451.65 |\\n| 102 | Fit | 0.29 | 112383932.7 |\\n| 102 | Fit | 0.33 | 12148063.19 |\\n| 102 | Fit | 0.37 | 17468415.81 |\\n| 102 | Fit | 0.42 | 2911634.782 |\\n| 102 | Fit | 0.47 | 5365095.597 |\\n| 102 | Fit | 0.52 | 833924.5525 |\\n| 102 | Fit | 0.57 | 1574646.596 |\\n| 102 | Fit | 0.63 | 223509.3907 |\\n| 102 | Fit | 0.68 | 796908.4845 |\\n| 102 | Fit | 0.74 | 94329.57708 |\\n| 102 | Fit | 0.79 | 336326.0939 |\\n| 102 | Fit | 0.85 | 31310.8242 |\\n| 102 | Fit | 0.91 | 129621.2056 |\\n| 102 | Fit | 0.95 | 17582.08691 |\\n| 102 | Fit | 1.01 | 57246.17566 |\\n| 102 | Fit | 1.06 | 10670.11288 |\\n| 102 | Fit | 1.12 | 33199.1344 |\\n| 102 | Fit | 1.18 | 6187.98562 |\\n| 102 | Fit | 1.24 | 16266.6067 |\\n| 102 | Fit | 1.30 | 5160.313139 |\\n| 102 | Fit | 1.38 | 12795.05784 |\\n| 125 | Experimental | 0.05 | 2822956756 |\\n| 125 | Experimental | 0.23 | 11533784455 |\\n| 125 | Experimental | 0.27 | 949434018.9 |\\n| 125 | Experimental | 0.30 | 1191396550 |\\n| 125 | Experimental | 0.33 | 1656828977 |\\n| 125 | Experimental | 0.37 | 278657298.6 |\\n| 125 | Experimental | 0.43 | 39553334.18 |\\n| 125 | Experimental | 0.48 | 81785451.65 |\\n| 125 | Experimental | 0.54 | 9251181.108 |\\n| 125 | Experimental | 0.57 | 26285625.12 |\\n| 125 | Experimental | 0.63 | 2973304.832 |\\n| 125 | Experimental | 0.68 | 12148063.19 |\\n| 125 | Experimental | 0.74 | 1199149.248 |\\n| 125 | Experimental | 0.79 | 4303311.825 |\\n| 125 | Experimental | 0.85 | 529594.7388 |\\n| 125 | Experimental | 0.90 | 2479511.901 |\\n| 125 | Experimental | 0.96 | 293498.3296 |\\n| 125 | Experimental | 1.01 | 1095056.733 |\\n| 125 | Experimental | 1.07 | 195047.7052 |\\n| 125 | Experimental | 1.13 | 529594.7388 |\\n| 125 | Experimental | 1.19 | 113115.2414 |\\n| 125 | Experimental | 1.25 | 268021.1178 |\\n| 125 | Experimental | 1.31 | 98711.14674 |\\n| 125 | Experimental | 1.36 | 186389.9686 |\\n| 125 | Experimental | 1.38 | 123867.6067 |\\n| 125 | Fit | 0.02 | 22790113017 |\\n| 125 | Fit | 0.23 | 19005234799 |\\n| 125 | Fit | 0.26 | 1039684115 |\\n| 125 | Fit | 0.33 | 1342674991 |\\n| 125 | Fit | 0.38 | 296614457.7 |\\n| 125 | Fit | 0.43 | 185184926.6 |\\n| 125 | Fit | 0.47 | 319319435 |\\n| 125 | Fit | 0.53 | 36119894.98 |\\n| 125 | Fit | 0.58 | 85584351.89 |\\n| 125 | Fit | 0.64 | 10601128.84 |\\n| 125 | Fit | 0.69 | 30121267.25 |\\n| 125 | Fit | 0.74 | 3111413.606 |\\n| 125 | Fit | 0.79 | 12148063.19 |\\n| 125 | Fit | 0.85 | 1183693.974 |\\n| 125 | Fit | 0.90 | 5365095.597 |\\n| 125 | Fit | 0.96 | 579936.2843 |\\n| 125 | Fit | 1.01 | 2369451.848 |\\n| 125 | Fit | 1.08 | 268021.1178 |\\n| 125 | Fit | 1.13 | 1145921.663 |\\n| 125 | Fit | 1.19 | 170210.3307 |\\n| 125 | Fit | 1.24 | 554216.0441 |\\n| 125 | Fit | 1.30 | 113115.2414 |\\n| 125 | Fit | 1.36 | 268021.1178 |\\n| 125 | Fit | 1.38 | 94329.57708 |\\n| 177 | Experimental | 0.04 | 64754149804 |\\n| 177 | Experimental | 0.23 | 3.03173E+11 |\\n| 177 | Experimental | 0.26 | 23924719221 |\\n| 177 | Experimental | 0.30 | 26115684208 |\\n| 177 | Experimental | 0.35 | 2954081924 |\\n| 177 | Experimental | 0.40 | 5330409366 |\\n| 177 | Experimental | 0.44 | 791756339.3 |\\n| 177 | Experimental | 0.49 | 1564466245 |\\n| 177 | Experimental | 0.55 | 222064365.5 |\\n| 177 | Experimental | 0.61 | 438786766.5 |\\n| 177 | Experimental | 0.67 | 68202896.16 |\\n| 177 | Experimental | 0.73 | 193766693.5 |\\n| 177 | Experimental | 0.79 | 21920226.17 |\\n| 177 | Experimental | 0.84 | 78155176.19 |\\n| 177 | Experimental | 0.91 | 7714787.065 |\\n| 177 | Experimental | 0.96 | 34516612.66 |\\n| 177 | Experimental | 1.03 | 2841326.401 |\\n| 177 | Experimental | 1.09 | 16693031.44 |\\n| 177 | Experimental | 1.15 | 1087373.868 |\\n| 177 | Experimental | 1.21 | 10130568.16 |\\n| 177 | Experimental | 1.26 | 529594.7388 |\\n| 177 | Experimental | 1.33 | 5365095.597 |\\n| 177 | Experimental | 1.38 | 441642.0555 |\\n| 177 | Fit | 0.05 | 64754149804 |\\n| 177 | Fit | 0.23 | 2.76856E+11 |\\n| 177 | Fit | 0.26 | 2.52988E+10 |\\n| 177 | Fit | 0.29 | 28598155823 |\\n| 177 | Fit | 0.35 | 3385146471 |\\n| 177 | Fit | 0.39 | 5093804275 |\\n| 177 | Fit | 0.45 | 867018110.1 |\\n| 177 | Fit | 0.49 | 1495023046 |\\n| 177 | Fit | 0.55 | 254468367 |\\n| 177 | Fit | 0.61 | 502815261.2 |\\n| 177 | Fit | 0.67 | 68202896.16 |\\n| 177 | Fit | 0.73 | 195047705 |\\n| 177 | Fit | 0.79 | 22938413.66 |\\n| 177 | Fit | 0.84 | 81785451.65 |\\n| 177 | Fit | 0.91 | 8073135.718 |\\n| 177 | Fit | 0.96 | 34516612.66 |\\n| 177 | Fit | 1.03 | 2479511.901 |\\n| 177 | Fit | 1.09 | 17468415.81 |\\n| 177 | Fit | 1.15 | 1000000 |\\n| 177 | Fit | 1.21 | 8840541.623 |\\n| 177 | Fit | 1.27 | 483623.1064 |\\n| 177 | Fit | 1.33 | 4899376.842 |\\n| 177 | Fit | 1.38 | 483623.1064 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At lower angles (below 0.2 degrees).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film grown at the highest temperature (177 °C) appears to have the smoothest surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 177 °C growth temperature shows the highest critical angle.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_6.jpg","caption":"FIG. 6. (Color online) Optical emission spectra of plasma radiation in (a) an $\\mathrm{O}_2$ plasma, (b) an $\\mathrm{H}_2$ plasma, and (c) an $\\mathrm{N}_2$ plasma as used for plasma-assisted ALD (operating pressure: 8 mTorr; plasma power: 100 W). The emission in the (vacuum) ultraviolet region was measured by means of a VUV monochromator and the emission in the visible by a simple spectrometer (Refs. 302, 303). Emission peaks were identified using the literature (Refs. 373-377). The insets show photographs of the corresponding plasmas.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_6","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":611,"height":1361,"image_format":"jpeg","image_sha256":"2c9d3f278ec84656fd96fe861bbdb0d1e92208d58eb74956e3873e2b9fd25acf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":25,"y":18,"width":586,"height":421},{"panel_id":"b","x":24,"y":474,"width":587,"height":421},{"panel_id":"c","x":25,"y":928,"width":586,"height":420}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The stacked spectra chart compares optical emission spectra from O₂, H₂, and N₂ plasmas. Each spectrum displays characteristic peaks at distinct wavelengths corresponding to specific electronic transitions: O₂⁺ and O emission lines, H₂ Lyman and Fulcher bands, and N₂ second positive and first negative systems. Insets show photographs of the respective plasma discharges, illustrating the visible color differences associated with each gas.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | O₂ Intensity (a.u.) | H₂ Intensity (a.u.) | N₂ Intensity (a.u.) |\\n|----------------|----------------------|----------------------|----------------------|\\n| 100 | 0.1 | 0.2 | 0.3 |\\n| 200 | 1.2 | 0.9 | 1.0 |\\n| 300 | 0.8 | 1.1 | 1.3 |\\n| 400 | 0.3 | 0.6 | 1.1 |\\n| 500 | 0.4 | 0.8 | 0.7 |\\n| 600 | 0.7 | 0.9 | 1.0 |\\n| 700 | 0.2 | 0.3 | 0.9 |\\n| 800 | 0.0 | 0.0 | 0.2 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Intensity (a.u.), corresponding to emission strength at each wavelength.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The O₂ plasma spectrum is dominated by O and O₂⁺ emission lines, the H₂ plasma shows strong Lyman and Fulcher bands, while the N₂ plasma displays distinct second positive and first negative system bands.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"O₂⁺ and O emission, H₂ Lyman and Fulcher bands, N₂ second positive and first negative systems\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_15_fig_1.jpg","caption":"FIG. 1. X-ray diffraction patterns of BST films grown on (a) $\\mathrm{TiO_2 / Si}$ and (b) $\\mathrm{Ta}_2\\mathrm{O}_5 / \\mathrm{Si}$ substrates.","id":"test/atomic-layer-deposition/experimental-usecase/15/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/15/fig_1","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/Il-Doo Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":542,"height":672,"image_format":"jpeg","image_sha256":"67acac6cc72ab8266144e06dd2cc92882a59fcd869c86848bd25b6912ad5526a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":6,"width":541,"height":665}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays X-ray diffraction patterns for 500nm Ba0.6Sr0.4TiO3 (BST) thin films deposited on Si substrates with different buffer layers, i) Buffer layer of 50nm TiO2 ii) Buffer layer of 50nm Ta2O5\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (degree) | Intensity (arb. units) a BST/TiO2/Si | Intensity (arb. units) a BST/Ta2O5/Si |\\n|---|---|---|\\n| 22 | BST (100) | BST (100) |\\n|27 | TiO₂ (101) | - |\\n| 33 | BST (110) | BST (110) |\\n| 38 | - | Ta₂O₅ (200) |\\n| 40 | BST (111) | BST (111) |\\n| 45 | BST (200) | BST (200) | \\n| 52 | BST (210) | BST (210) |\\n| 56 | BST (211) | BST (211) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"BST (110) is present and it has the highest intensity in both cases BST/TiO2/Si and BST/Ta2O5/Si\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For BST/Ta2O5/Si, the following BST peaks are observed\\n(100)\\n(110)\\n(111)\\n(200)\\n(211)\\n\\n and for BST/TiO2/Si\\n(100)\\n(110)\\n(200)\\n(211)\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For Ta2O5, the (200) oriented peaks at 27 and 38 degrees can be seen as tiny bumps and TiO2 the (101) orientation is seen around 25 degree. These peaks are very small in intensity compared to the rest of the BST peaks.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_19_fig_5.jpg","caption":"Fig. 5 Grazing incidence X-ray diffraction patterns of selected $\\mathrm{ZrO_2}$ thin films grown from $(\\mathrm{CpMe})_2\\mathrm{Zr(OMe)Me}$ and $(\\mathrm{CpMe})_2\\mathrm{ZrMe}_2$ . The deposition temperature was $350^{\\circ}\\mathrm{C}$ and film thickness $60 - 70\\mathrm{nm}$ . Miller indices are assigned to correspond the monoclinic and cubic phases of $\\mathrm{ZrO_2}$ .","id":"test/atomic-layer-deposition/experimental-usecase/19/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/19/fig_5","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/Jaakko Niinisto et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":477,"height":352,"image_format":"jpeg","image_sha256":"c4d4186140f8cd44855bd20e28793172c6ac43e5b8a96dd31041d76e2eaa0f60","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":473,"height":349}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows an X-ray diffraction (XRD) patterns of a thin film deposited using the precursor (CpMe)₂Zr(OMe)Me and (CpMe)₂ZrMe. The pattern indicates the film is crystalline, with peaks labeled at specific 2θ angles. Multiple phases are present and the corresponding diffraction peaks labeled \\\"M\\\" and \\\"C\\\" correspond to monoclinic and cubic phases respectively .\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (degree) | Miller index | Precursor |\\n|-------------|--------------|-------------------------------|\\n| 28.5 | 111_M | (CpMe)₂Zr(OMe)Me |\\n| 28.5 | 111_M | (CpMe)₂ZrMe |\\n| 30.5 | 111_C | (CpMe)₂Zr(OMe)Me |\\n| 30.5 | 111_C | (CpMe)₂ZrMe |\\n| 30.0 | 111_M |(CpMe)₂Zr(OMe)Me |\\n| 34.0 | 020_M | (CpMe)₂Zr(OMe)Me |\\n| 34.0 | 020_M | (CpMe)₂ZrMe |\\n| 41.0 | -112_M | (CpMe)₂Zr(OMe)Me |\\n| 41.0 | -112_M | (CpMe)₂Zr(Me |\\n| 48.0 | 220_M | (CpMe)₂Zr(OMe)Me |\\n| 51.5 | -221_M | (CpMe)₂Zr(OMe)Me |\\n| 51.5 | -221_M | (CpMe)₂ZrMe |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Phase: Monoclinic ZrO₂.\\n\\nLattice Plane: Diffraction from the (111) crystal planes.\\n\\nEvidence: Confirms long-range crystalline order in the film.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The monoclinic (111) peak is significantly more intense than the cubic (111) peak. This suggests the film is predominantly monoclinic phase, with the cubic phase present as a minor component. The relative peak intensities provide a qualitative measure of the phase fraction in the mixed-phase film.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It maps to enhanced fracture toughness due to phase transformation toughening, a key property for thermal barrier coatings.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This film is more suitable for a thermal barrier coating. The predominant monoclinic phase is stable at lower temperatures, while the presence of the metastable cubic phase is beneficial for toughness in coating applications. For a gate dielectric, a pure, stable amorphous or cubic phase would be preferred to ensure consistent electrical properties.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_21_fig_7.jpg","caption":"Fig. 7 XRD gonio scans of $\\sim 50 \\mathrm{nm}$ thick $\\mathrm{Li_2CO_3}$ films grown on TiN using thermal (blue) and plasma (red) ALD at different processing temperatures. The bars in the lower panel indicate the expected diffraction from a $\\mathrm{Li_2CO_3}$ powder sample. The reflections at $\\sim 42.5$ originate from the TiN (200) textured substrate.","id":"test/atomic-layer-deposition/experimental-usecase/21/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/21/fig_7","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/N. Hornsveld et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":616,"height":525,"image_format":"jpeg","image_sha256":"11f04d8d1eed1f0d964b5bf3140a9a785dc26250a2ab3eb7e395d20396c09306","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":3,"width":612,"height":522}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays X-ray diffraction patterns for TiN samples prepared at different temperatures with reference peaks\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Process | Temperature (°C) | Main Peaks Observed (2θ °) |\\n|----------|-------------------|-----------------------------|\\n| Thermal | 300 | ~36, ~42, ~62 |\\n| Thermal | 150 | ~36, ~42, ~62 |\\n| Thermal | 100 | ~36, ~42, ~62 |\\n| Plasma | 250 | ~36, ~42, ~62 |\\n| Plasma | 150 | ~36, ~42, ~62 |\\n| Plasma | 50 | ~36, ~42, ~62 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The gonio measurements, which detect periodicity of planes parallel to the surface, show only the peak at 31.7°, meaning the process yields a preferential crystal growth orientation in the <002> direction.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For thermal ALD films, the crystallinity increases slightly with increasing deposition temperature. A similar trend was observed in literature for thermal ALD of Li2CO3 on Si (100) substrates using a LiN(SiMe3)2 precursor, although the crystalline growth started only at 180 °C according to their XRD spectra. The\\nonset for crystalline growth could thus be influenced by the precursor, the substrate or a combination of both.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"When considering the plasma ALD Li2CO3 films, the layer deposited at 50 °C is highly crystalline and oriented in the <002>direction, similar to the thermal process. At higher deposition temperatures, the spectra change significantly and the crystallinity seems to be suppressed.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_23_figure_2.jpg","caption":"Figure 2. (a) In situ FTIR difference spectra following 1, 3, and 5 TMGa- $\\mathrm{H}_2\\mathrm{O}$ exposures and one $\\mathrm{O}_3$ exposure at $350^{\\circ}\\mathrm{C}$ . (b) Enlarged image of symmetric $\\mathrm{CH}_3$ deformation feature during first TMGa- $\\mathrm{H}_2\\mathrm{O}$ cycle and first $\\mathrm{O}_3$ exposure. Initial feature due to TMGa adsorption on $\\mathrm{Al}_2\\mathrm{O}_3$ surface consists of peaks at 1209 and $1220~\\mathrm{cm^{-1}}$ . $\\mathrm{H}_2\\mathrm{O}$ exposure removes only the peak at $1209~\\mathrm{cm^{-1}}$ , whereas $\\mathrm{O}_3$ exposure removes the peak at $1220~\\mathrm{cm^{-1}}$ .","id":"test/atomic-layer-deposition/experimental-usecase/23/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/23/figure_2","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/David J. Comstock et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":1075,"height":530,"image_format":"jpeg","image_sha256":"61fd682c26b0056a2d6974e3c5d3965e1a41150b35e74b4d60ade355aa920589","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":3,"width":537,"height":524},{"panel_id":"b","x":532,"y":4,"width":466,"height":525}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"In situ FTIR difference spectra following 1, 3, and 5 TMGa-H2O exposures and one O3 exposure at 350 °C.\"},{\"panel_id\":\"b\",\"text\":\"Enlarged image of symmetric CH3 deformation feature during first TMGa-H2O cycle and first O3 exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD Step | Wavenumber (cm⁻¹) |\\n|---|---|\\n| 1st TMGa | Trough at 3730; Peaks at 1215, 2915, 2975 |\\n| 1st Water | Troughs at 1215, 2915, 2975; Peak at 3730 |\\n| 1st Ozone | Troughs at 1215, 2915, 2975; Peaks at 1372, 1586, 3730 |\\n| 3rd TMGa | |\\n| 3rd Water | |\\n| 5th TMGa | |\\n| 5th Water | |\"},{\"panel_id\":\"b\",\"text\":\"| ALD Step | Wavenumber (cm⁻¹) |\\n|---|---|\\n| 1st TMGa | Peaks at 1209, 1220 |\\n| 1st Water | Trough at 1209 |\\n| 1st Ozone | Trough at 1220 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 2915 and 2975 cm^-1, respectively.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 3730 cm^-1.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There are noticeable peaks and troughs after the first cycle. After three cycles, the changes are practically negligible and after five cycles, no changes are observed. This is an indication that no species are reacting or desorbing after 5 cycles of water and TMGa exposure.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Two peaks appear at 1209 and 1220 cm^-1.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_23_figure_3.jpg","caption":"Figure 3. In situ FTIR difference spectra following consecutive TMGa- $\\mathrm{O}_3$ exposures at $350^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-deposition/experimental-usecase/23/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/23/figure_3","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/David J. Comstock et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":486,"height":483,"image_format":"jpeg","image_sha256":"6bc8a4417ec6f886e55672347b5158e775e1a1bd66c719710cab6323e6151a1a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":486,"height":483}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows in situ FTIR difference spectra following consecutive TMGa-O3 exposures at 350 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD Step | Wavenumber (cm⁻¹) |\\n|---|---|\\n| 1st TMGa | Trough at 1372, 1586, 3730; Peaks at 1215, 2915, 2975 |\\n| 1st Ozone | Troughs at 1215, 2915, 2975; Peaks at 1372, 1586, 3730 |\\n| 2nd TMGa | Trough at 1372, 1586, 3730; Peaks at 1215, 2915, 2975 |\\n| 2nd Ozone | Troughs at 1215, 2915, 2975; Peaks at 1372, 1586, 3730 |\\n| 3rd TMGa | Trough at 1372, 1586, 3730; Peaks at 1215, 2915, 2975 |\\n| 3rd Ozone | Troughs at 1215, 2915, 2975; Peaks at 1372, 1586, 3730 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"350 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 1372 and 1586 cm^-1.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During TMGa exposure, an increase is observed at three positions and a decrease is observed at three other positions. During Ozone exposure, the exact opposite changes are observed. This is an indication that the same species desorb/react during each ALD cycle.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_23_figure_5.jpg","caption":"Figure 5. In situ QMS measurements during $\\mathrm{Ga}_2\\mathrm{O}_3$ ALD using TMGa and $\\mathrm{O}_3$ where the individual precursor exposures are indicated by the lower traces.","id":"test/atomic-layer-deposition/experimental-usecase/23/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/23/figure_5","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/David J. Comstock et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":498,"height":486,"image_format":"jpeg","image_sha256":"372ca185c011cb7f1151ebbd6fa96579bc773dd3fbc7f8035a66bcc6bc51b10d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":498,"height":486}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_24_figure_6.jpg","caption":"Figure 6. GI-XRD spectra of $\\mathrm{TiO_2}$ films on ruthenium and titanium nitride at different temperatures. The films have an anatase crystal structure when deposited on TiN, and the crystal structure does not change with increasing temperature. Films deposited on ruthenium are amorphous. With increasing temperature the films crystallize in the rutile structure.","id":"test/atomic-layer-deposition/experimental-usecase/24/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/24/figure_6","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/Martin Rose et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":627,"height":498,"image_format":"jpeg","image_sha256":"8128c8751fd2adc89eb7f2d5c1eb8fd1ec8cdcd1a542ef86f98857f263c7206c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":626,"height":495}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The GI-XRD patterns show that the crystal structure of TiO₂ thin films strongly depends on the substrate and temperature. Films grown on TiN crystallize directly into the anatase phase (2θ ≈ 25.3°) even at low temperatures and remain stable up to 600 °C, while films on Ru are amorphous at low temperature and transform into the rutile phase (2θ ≈ 27.5°) only after high-temperature annealing. This demonstrates that substrate-induced effects control TiO₂ polymorph formation and thermal crystallization behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Substrate | Anneal temperature (°C) | 2θ (°) | Phase / peak assignment |\\n|------------------|-------------------------:|-------:|----------------------------|\\n| TiN | 100 | 24 | TiO₂ anatase |\\n| TiN | 100 | 27 | TiO₂ rutile |\\n| TiN | 600 | 24 | TiO₂ anatase |\\n| TiN | 600 | 27 | TiO₂ rutile |\\n| Ru (ruthenium) | 100–900 | 38–44 | Ru substrate peaks (set) |\\n| TiO₂ on Ru | 100–900 | 24–27 | Mixed anatase / rutile TiO₂|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The top set of curves explicitly shows the \\\"TiO₂ Anatase\\\" peak at ~25degrees for films grown on TiN. In contrast, the Ruthenium substrate promotes the Rutile phase or amorphous growth, making TiN the mandatory choice for achieving the Anatase polymorph.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To achieve the high-k Rutile phase on Ruthenium, the data shows the process requires high temperatures (approaching 900°C) to produce strong, sharp diffraction peaks. This high thermal budget might damage other sensitive components on the chip (e.g., melting interconnects or degrading dopant profiles), representing a significant manufacturing constraint compared to the lower-temperature Anatase process on TiN.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Transition from Amorphous to Crystalline (Rutile).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The persistence of the sharp metallic Ruthenium peaks suggests good interfacial stability. It implies that the Ruthenium substrate does not completely oxidize (turning into volatile RuO4 or diffuse massively into the TiO₂ to destroy the interface, even at 900°C. If the interface failed or reacted significantly, these substrate peaks would diminish, broaden, or shift, none of which is observed here.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_48_fig_4.jpg","caption":"FiG. 4. (Color online) GI-XRD diffractogram for $32\\mathrm{nm}$ thick $\\mathrm{HfO_2}$ films prepared by ALD. The substrate stage temperatures during deposition are indicated by the labels. The subscripts M, T, and C at indices denote monoclinic, tetragonal, and cubic phases, respectively. The spectra show a clear temperature dependence of the $\\mathrm{HfO_2}$ film crystallinity with a transition from amorphous to polycrystalline films embarking at a temperature of $300^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-deposition/experimental-usecase/48/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/48/fig_4","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/Sharma et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"48","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":602,"height":428,"image_format":"jpeg","image_sha256":"27a1ae54f1447da6af9d0d704fcb2aa69057693a3b6172d3c3cd879b860feee4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":602,"height":428}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays X-ray diffraction patterns for films deposited at different temperatures (200 C°, 300 C°, 350 C°, 400 C°). The films become less amorphous with increasing temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Temperature C°| Approx. 2θ (°) | Counts, a.u | Annotated reflection(s) | Phase |\\n|---|---|---|---|---|\\n|200 | 20| 51| - | - |\\n|200 | 30| 118| - | - |\\n|200 | 35| 96| - | - |\\n|200 | 50| 51| - | - |\\n|300 | 20| 22| - | - |\\n|300 | 28| 111| (-111) | M |\\n|300 | 30| 94| - | - |\\n|300 | 50| 22| - | - |\\n|350 | 20| 50| - | - |\\n|350 | 24| 85| (110) | M |\\n|350 | 28| 290| (111) | M |\\n|350 | 30| 120| (101), (111) | T,C |\\n|350 | 32| 124| (111) | M |\\n|350 | 34| 88| (200), (020) | M |\\n|350 | 36| 91| (011), (002) | T,C |\\n|350 | 41| 74| (-112) | M |\\n|350 | 46| 62| (-202) | M |\\n|350 | 50| 70| (-221),(022),(022) | M,C |\\n|400 | 20| 50| - | - |\\n|400 | 24| 89| (110) | M |\\n|400 | 28| 532| (-111) | M |\\n|400 | 30| 139| (101), (111) | T,C |\\n|400 | 32| 136| (111) | M |\\n|400 | 34| 116| (200), (020) | M |\\n|400 | 36| 104| (011), (002) | T,C |\\n|400 | 36| 117| (-201) | M |\\n|400 | 41| 153| (-112) | M |\\n|400 | 46| 127| (-202) | M |\\n|400 | 49| 95| (220) | M |\\n|400 | 50| 111| (-221),(022),(022) | M,C |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"200 C°, 300 C°, 350 C°, 400 C°\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film at 200 C° shows no resolved diffraction peaks.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Monoclinic phase.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The (-111) peak at ~28° (2θ) is visible by 300, 350 and 400 C°.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_51_fig_6.jpg","caption":"Fig. 6 XPS spectra of the Mo3d doublet of $\\mathrm{MoO}_x$ films grown in PE-ALD processes with varying plasma step","id":"test/atomic-layer-deposition/experimental-usecase/51/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/51/fig_6","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/Ziegler et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":639,"height":578,"image_format":"jpeg","image_sha256":"c40cdafca4b1c8745d4c1f3b702581f88f3576cff16ebffe339155bcc7d925de","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":639,"height":578}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays an XPS chart of the Mo 3d doublet of MoOx with the results of three samples superimposed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | binding energy (eV) |\\n|---|---|\\n| 2 second O2 | Peaks at 232.5 and 235.5 |\\n| 2 second O2 & Ar | Peaks at 232.5 and 235.5 |\\n| 1 second O2 | Peaks at 232.5 and 235.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mo 3d5/2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mo 3d3/2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This should be 5:3.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, they do not differ. This means that the oxidation state of Mo and its chemical environment are the same.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_51_fig_7.jpg","caption":"Fig. 7 XPS spectra of O 1s energy region of $\\mathrm{MoO}_x$ films grown in PE-ALD processes with varying plasma step","id":"test/atomic-layer-deposition/experimental-usecase/51/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/51/fig_7","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/Ziegler et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":656,"height":594,"image_format":"jpeg","image_sha256":"e14a89852eee9e3a47ebe654c8d5b2cd5c9ff86ffce72507f50d2260af93f49a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":656,"height":594}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays an XPS chart of the O 1s energy region of MoOx with the results of three samples superimposed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Binding energy (eV) |\\n|---|---|\\n| 2 second O2 | Peaks at 530.2 and 531.8 |\\n| 2 second O2 & Ar | Peaks at 530.2 and 531.8 |\\n| 1 second O2 | Peaks at 530.2 and 531.2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"530.3 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The one at 531.3 eV, which also shifts to 531.8 eV.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"531.3 eV\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"x = 3.15.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_56_figure_1.jpg","caption":"Figure 1. XRD patterns of $40\\mathrm{nm}\\mathrm{Li}_3\\mathrm{PO}_4$ films deposited at different processing temperatures. Crystallinity of the layers is seen to increase with increasing temperature.","id":"test/atomic-layer-deposition/experimental-usecase/56/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/56/figure_1","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/Put et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":678,"height":392,"image_format":"jpeg","image_sha256":"814ea2570b767b45390554dbc45df99e7fdcc78ae0bfce7c415fc6dbce3d8560","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":673,"height":391}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays multiple XRD patterns of Li₃PO₄ at different temperatures (200 °C, 225 °C, 250 °C and 275 °C) with intensity plotted against 2θ. Vertical blue lines indicate specific peaks.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ | Li₃PO₄ 200°C | Li₃PO₄ 225°C | Li₃PO₄ 250°C | Li₃PO₄ 275°C | Li₃PO₄ Orthorom |\\n|---|---|---|---|---|---|\\n| 15 | - | - | - | - | peak at ~17° |\\n| 20 | - | - | peak at ~23° | peak at ~23° | peak at ~20°,~22°, ~23° |\\n| 25 | - | - | - | peak at ~25° | peak at ~25°, 29° |\\n| 30 | peak at ~34° | peak at ~34° | peak at ~34° | - | peak at ~34° |\\n| 35 | - | peak at ~37° | peak at ~37° | peak at ~37° | peak at ~36°, 37 ° |\\n| 40 | - | - | - | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The blue lines represent specific peaks related to the Li3PO4 orthotom.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the deposition temperature increases, more and clearer peaks appear in the spectra.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 250 °C and 275 °C more peaks related to Li3PO4 can be observed.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the deposition temperature decreases, the crystallinity of Li3PO4 films decreases.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG2_c.jpg","caption":"FIG. 2. (a) GPC of $\\mathrm{VO}_{\\mathrm{x}}$ as a function of plasma pulse duration at 850 and $1600\\mathrm{mTorr}$ . Normalized Raman spectra of $\\mathrm{VO}_{\\mathrm{x}}$ deposited as a function of plasma pulse duration at 850 (b) and $1600\\mathrm{mTorr}$ (c). (d) XPS-derived N and C atomic % as a function of plasma pulse duration at 850 and $1600\\mathrm{mTorr}$ .","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG2_c","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG2_c","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"c","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG2_c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG2_c.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"c","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":698,"height":559,"image_format":"jpeg","image_sha256":"6a69ed89703e54dcc235e178509d59d6786c85bb656f3ade93e489133319d802","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":0,"y":0,"width":698,"height":559}],"summarization":"[{\"panel_id\":\"c\",\"text\":\"This stacked spectra chart shows Raman spectra collected under 1600 mTorr pressure for different exposure durations ranging from 5 to 80 seconds. As the plasma exposure time increases, the peak intensities generally decrease, particularly for bands associated with Ag and Al₂O₃ vibrational modes. This suggests a progressive structural or compositional change over time, which is clearly visualised through the staggered spectral layout.\"}]","data_extraction":"[{\"panel_id\":\"c\",\"text\":\"| Raman shift (cm⁻¹) | 5 s | 10 s | 15 s | 20 s | 30 s | 40 s | 60 s | 80 s |\\n|--------------------|-----|------|------|------|------|------|------|------|\\n| 150 | 0.90| 0.85 | 0.80 | 0.75 | 0.60 | 0.50 | 0.40 | 0.35 |\\n| 300 | 0.50| 0.45 | 0.40 | 0.38 | 0.30 | 0.25 | 0.22 | 0.20 |\\n| 450 | 0.40| 0.35 | 0.32 | 0.30 | 0.28 | 0.26 | 0.24 | 0.22 |\\n| 600 | 0.60| 0.58 | 0.55 | 0.50 | 0.48 | 0.45 | 0.43 | 0.40 |\\n| 800 | 0.70| 0.68 | 0.65 | 0.60 | 0.58 | 0.55 | 0.52 | 0.50 |\\n| 1000 | 0.90| 0.88 | 0.85 | 0.82 | 0.80 | 0.78 | 0.75 | 0.72 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The decrease in Raman peak intensity with increased exposure time indicates a reduction in crystallinity or a transformation in the chemical composition of the material. As the plasma treatment continues, it may disrupt the ordered lattice structure, especially for compounds like Ag and Al₂O₃, leading to diminished signal intensity. This change reflects progressive material modification, likely due to ion bombardment or etching effects over time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"150 cm⁻¹ (B₁g peak)\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Tracks film integrity, Assesses crystallinity loss, Identifies degradation threshold, Links treatment to material properties\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_33_figure_4.jpg","caption":"Figure 4. Raman spectra of the different graphene samples after each processing step: transfer, plasma treatment, 100 cycles $\\mathrm{Al}_2\\mathrm{O}_3$ ALD, and $400^{\\circ}\\mathrm{C}$ anneal for a) untreated graphene, b) $30\\mathrm{~s~O_2}$ plasma treated graphene, and c) $35\\mathrm{~s~H_2}$ plasma treated graphene. The spectra are normalized to the 2D band and are offset for clarity.","id":"test/atomic-layer-deposition/simulation-usecase/33/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/33/figure_4","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":625,"height":1375,"image_format":"jpeg","image_sha256":"8090492a05836df09d5fdbe10b44d9f0eaafbb8c52af454a65826910500355ee","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":81,"y":25,"width":544,"height":392},{"panel_id":"b","x":80,"y":475,"width":545,"height":392},{"panel_id":"c","x":80,"y":926,"width":545,"height":393}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays Raman spectra of pristine, Al₂O₃ ALD, and 400°C annealed samples.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows Raman spectra of pristine, O₂ plasma treated, Al₂O₃ ALD, and 400°C annealed samples.\"},{\"panel_id\":\"c\",\"text\":\"The figure presents Raman spectra of pristine, H₂ plasma treated, Al₂O₃ ALD, and 400°C annealed samples.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Raman Shift, cm⁻¹ | Pristine | Al₂O₃ ALD | 400°C Anneal |\\n|---|---|---|---|\\n| 1350 | 0.03 | 0.15 | 0.10 |\\n| 1580 | 0.45 | 1.00 | 1.00 |\\n| 2700 | 1.00 | 0.75 | 0.65 |\"},{\"panel_id\":\"b\",\"text\":\"| Raman Shift, cm⁻¹ | Pristine | O₂ Plasma | Al₂O₃ ALD | 400°C Anneal |\\n|---|---|---|---|---|\\n| 1350 | 0.03 | 0.65 | 0.55 | 0.35 |\\n| 1580 | 0.45 | 1.00 | 1.00 | 1.00 |\\n| 2700 | 1.00 | 0.85 | 0.90 | 0.55 |\"},{\"panel_id\":\"c\",\"text\":\"| Raman Shift, cm⁻¹ | Pristine | H₂ Plasma | Al₂O₃ ALD | 400°C Anneal |\\n|---|---|---|---|---|\\n| 1350 | 0.03 | 0.45 | 0.30 | 0.15 |\\n| 1580 | 0.45 | 1.00 | 1.00 | 1.00 |\\n| 2700 | 1.00 | 0.80 | 0.95 | 0.55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They are normalized to the 2D band.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The paper states that the Raman D band is associated with defects in graphene or with covalent functionalization that introduces sp3 character. After both O2 and H2 plasma, a D band appears, consistent with disruption of the sp2 lattice and formation of out of plane bonds. The differing reversibility, especially the disappearance of the D band for H2 after annealing, indicates that at least part of the D band can come from removable surface groups rather than permanent lattice damage.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Raman data show that plasma pretreatments create functionalization needed for ALD nucleation, but they also introduce a D band that signals degraded graphene quality. The decrease of the D band after Al2O3 ALD suggests partial removal of surface groups or passivation during deposition, which aligns with the mobility recovery discussed later. The full removal of the D band for the H2 plasma case after 400 C anneal supports a process route where functionalization can be reversed, improving the chance of maintaining high mobility after dielectric integration.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"O2 plasma: strong D band after plasma, reduced after ALD, still present after 400 C anneal.\\n\\nH2 plasma: weaker D band after plasma, reduced after ALD, absent after 400 C anneal.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_33_figure_6.jpg","caption":"Figure 6. Hydrogen plasma reversibility for a graphene sample exposed for $35~\\mathrm{s}$ to $\\mathrm{H}_2$ plasma and annealed at 200 and $400^{\\circ}\\mathrm{C}$ . a) Raman spectra and b) mobility determined from Hall measurements after the different processing steps. The pristine graphene sample was annealed at $400^{\\circ}\\mathrm{C}$ before the Hall measurement to exclude the influence of annealing effects on the mobility.","id":"test/atomic-layer-deposition/simulation-usecase/33/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/33/figure_6","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"bar chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":1275,"height":458,"image_format":"jpeg","image_sha256":"45c3e6d2190d3d18954736d6cfb204a097d9ead06f821e12d48a0bdd8d92ace4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":10,"y":11,"width":625,"height":411},{"panel_id":"b","x":653,"y":5,"width":621,"height":417}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Raman spectra for pristine graphene, after 35 s H2 plasma, and after anneals at 200 C and 400 C. The H2 plasma introduces a clear D band near 1350 cm1, and the 400 C anneal removes it, consistent with reversible hydrogenation.\"},{\"panel_id\":\"b\",\"text\":\"Hall mobility after the same steps, with the pristine reference annealed at 400 C before the Hall measurement. Mobility drops after H2 plasma, then recovers after 200 C and rises further after 400 C to above the initial value.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Raman Shift, cm⁻¹ | Peak | Pristine | H₂ Plasma | 200°C Anneal | 400°C Anneal |\\n|---|---|---|---|---|---|\\n| 1350 | D | 0.05 | 0.15 | 0.12 | 0.08 |\\n| 1580 | G | 0.55 | 0.70 | 0.75 | 0.80 |\\n| 2450 | D+D' | 0.05 | 0.08 | 0.06 | 0.05 |\\n| 2700 | 2D | 1.00 | 0.45 | 0.50 | 0.55 |\"},{\"panel_id\":\"b\",\"text\":\"| Treatment Stage | Mobility (cm²/(V·s)) |\\n|---|---|\\n| Pristine | 1250 |\\n| H₂ Plasma | 400 |\\n| 200°C Anneal | 900 |\\n| 400°C Anneal | 1700 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After H2 plasma, the D band appears and mobility drops strongly.\\n\\nAfter 200 C anneal, the D band decreases and mobility partially recovers. \\n\\nAfter 400 C anneal, the D band disappears and mobility increases to above the initial value.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The D band after H2 plasma is consistent with covalent functionalization that introduces sp3 character, rather than permanent lattice damage. After annealing at 400 C, hydrogen desorbs and the sp2 network is restored, so the D band disappears. This supports the claim that the H2 plasma effect is reversible under these conditions.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"To exclude mobility changes that come only from annealing, so the comparison isolates the effects of H2 plasma and the later anneals.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After the 400 C anneal, mobility exceeds the starting value in this reversibility test, showing that the process can yield net improvement rather than only recovery. The paper suggests this can arise from residue removal by the H2 plasma and from beneficial effects of the Al2O3 overlayer after annealing, such as screening of charged impurities. This supports an ALD integration route that enables nucleation while avoiding a lasting mobility penalty.\"}]}]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_34_figure_1.jpg","caption":"Figure 1. XPS spectra of the core level C 1s of a) pristine graphene, b) graphene after 5 min of $\\mathsf{H}_{2}$ plasma treatment, and c) graphene after 5 min $\\Omega_2$ plasma treatment. Both plasma treatments were performed at a pressure of $50~\\mathrm{mTorr}$ and power of $100W$","id":"test/atomic-layer-deposition/simulation-usecase/34/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/34/figure_1","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":669,"height":1050,"image_format":"jpeg","image_sha256":"959e720e93b40c7a328a2bedec6e8b7743335fdb3a8b39f1dedc410bbdd0a0ff","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":0,"width":662,"height":528},{"panel_id":"b","x":3,"y":527,"width":663,"height":521}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows Raman spectra of graphene exposed to H₂ plasma at various times, up to 8 minutes.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows Raman spectra of graphene exposed to O₂ plasma at various times, up to 5 minutes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Raman Shift (cm⁻¹) |\\n|---|---|\\n| Pristine | Peaks at 1600, 2450, 2700 |\\n| 2 min | Peaks at 1350, 1600, 1650, 2450, 2700, 2950 |\\n| 3 min | Peaks at 1350, 1600, 1650, 2700, 2950 |\\n| 4 min | Peaks at 1350, 1600, 1650, 2450, 2700, 2950 |\\n| 5 min | Peaks at 1350, 1600, 1650, 2700, 2950 |\\n| 6 min | Peaks at 1350, 1600, 1650, 2700, 2950 |\\n| 8 min | Peaks at 1350, 1600, 1650, 2700, 2950 |\"},{\"panel_id\":\"b\",\"text\":\"| Sample | Raman Shift (cm⁻¹) |\\n|---|---|\\n| Pristine | Peaks at 1600, 2450, 2700 |\\n| 1 min | Peaks at 1350, 1600, 1650, 2700, 2950 |\\n| 2 min | Peaks at 1350, 1600, 1650, 2700, 2950 |\\n| 3 min | Peaks at 1350, 1600, 1650, 2700, 2950 |\\n| 5 min | Peaks at 1350, 1600, 2700, 2950 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The two peaks with a Raman shift of about 1600 and 2700 cm^-1.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The D-band at approximately 1350 cm⁻¹ and the D'-band at approximately 1650 cm⁻¹ appear after both H₂ and O₂ plasma exposure. These bands are associated with the formation of defects and/or functionalisation of the graphene structure.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The strong increase of the intensity of the D-band corresponds to the formation of sp^3 C bonds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 2 shows that both H₂ and O₂ plasma treatments introduce significant structural changes in graphene, as evidenced by the appearance of the D and D′ Raman bands, which are absent or much weaker in pristine graphene. These two bands are linked to disruptions in the graphene lattice, but whether that is due to lattice defects or chemical functionalization can be determined by using the intensity ratio of the D to D′ peaks. A ratio close to 13 is associated with sp² to sp³ bond conversion caused by the attachment of functional groups, whereas a ratio near 7 suggests that the changes are primarily due to the formation of lattice defects.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_12.jpg","caption":"Fig. 12. Mass spectra from $m / z$ 10 to 50 showing lower masses including $\\mathrm{CO_2}$ and $\\mathrm{H_2O}$ combustion products during Hacac exposures on (a) CoO and (b) $\\mathrm{Co_3O_4}$ powders at $250^{\\circ}\\mathrm{C}$ . Mass spectra are normalized using ion signal from Hacac at $m / z$ 43.","id":"test/atomic-layer-etching/experimental-usecase/21/fig_12","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_12","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":664,"height":600,"image_format":"jpeg","image_sha256":"dd66491e3764a3a7cb4cc63ec7d2ab8bc81cdfc14e8bbb22c05a94140aab4b6f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":661,"height":595}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays mass spectrometry data at 250°C after the first Hacac exposure, comparing two samples labeled Co₃O₄ and CoO.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| m/z | Co3O4 | CoO |\\n| --- | --- | --- |\\n| 10 | - | - |\\n| 15 | peak at 15 | peak at 15 |\\n| 20 | peak at 18 | peak at 18 |\\n| 25 | - | - |\\n| 30 | - | - |\\n| 35 | - | - |\\n| 40 | peak at 43, 44 | peak at 43, 44 |\\n| 45 | - | - |\\n| 50 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the figure, the combustion of Hacac by CoO and Co3O4 powders at 250 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both the Co3O4 and CoO powders exhibit the same peaks, with a difference in peak intensity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The products of the combustion reaction demonstrate a higher peak intensity for Co3O4 than for CoO.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ions signals for CO2 and H2O are more prominent depending on the type of powder, i.e. Co3O4 or CoO.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_3.jpg","caption":"Fig. 3. CoO film thickness change versus number of CoO thermal ALE cycles using sequential Hacac and $\\mathrm{O_3}$ exposures at 250 and $200^{\\circ}C$ Etch rates are 0.43 $\\dot{\\mathrm{A}} /$ cycle at $250^{\\circ}C$ and $0.09\\mathrm{\\AA}$ /cycle at $200^{\\circ}C$ Fig. 5. XRD diffractograms for: (a) initial CoO thin film on Si prior to etching (h-CoO); and (b) CoO thin film after 300 ALE cycles using sequential Hacac and $\\mathrm{O_3}$ exposures at $250^{\\circ}C$ (c-CoO).","id":"test/atomic-layer-etching/experimental-usecase/21/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_3","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":664,"height":586,"image_format":"jpeg","image_sha256":"95d8e01dabd356304c5a5d4e1d9a1f59da63cefbc808f532ff5122c5d9edfdef","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":5,"width":658,"height":581}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a XRD diffractograms with peaks at various 2Theta angles for the initial CoO and after ALE cycle at 250 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2 Theta (degrees) | Initial CoO | After ALE |\\n| --- | --- | --- |\\n| 30 | peak at 32°, 34°, 36° | peak at 36° |\\n| 40 | peak at 42°, 48° | peak at 42° |\\n| 50 | peak at 58° | peak at 59° |\\n| 60 | peak at 62°, 68° | peak at 62°, 64° |\\n| 70 | - | - |\\n| 80 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The (111), (200), and (220) correspond to the c-CoO, and (511) and (440) correspond to c-Co3O4.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"h-CoO and c-CoO can be observed in the initial surface.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"(111), (200) and (220) which correspond to c-CoO, and (511) and (440) which correspond to c-Co3O4.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The CoO turns into Co3O4 after the cycle.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_6.jpg","caption":"Fig. 6. XRD diffractograms for: (a) CoO thin film on Si prior to etching (h-CoO); (b) CoO film after 2 doses of $\\mathrm{O_3}$ for 1 s at $250^{\\circ}\\mathrm{C}$ ; (c) CoO film after 10 doses of $\\mathrm{O_3}$ for 1 s at $250^{\\circ}\\mathrm{C}$ ; (d) CoO film after 410 doses of $\\mathrm{O_3}$ for 1 s at $250^{\\circ}\\mathrm{C}$ $\\mathrm{c - Co_3O_4}$ .","id":"test/atomic-layer-etching/experimental-usecase/21/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_6","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":673,"height":778,"image_format":"jpeg","image_sha256":"505269527de6af1cbc03f38de2ffc84507b510ab34e6f977032d47a6190a40bb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":669,"height":772}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a XRD diffractograms with peaks at various 2Theta angles for CoO samples exposed to different doses of O3: no exposure, 2 doses, 10 doses, and 410 doses.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Intensity (arb. units) | Initial | 2 doses of O3 | 10 doses of O3 | 410 doses of O3 |\\n| --- | --- | --- | --- | --- |\\n| 20 | - | - | peak at 19° | peak at 19° |\\n| 25 | - | - | - | - |\\n| 30 | peak at 31°, 34° | peak at 31°, 34° | peak at 31°, 34° | peak at 31° |\\n| 35 | peak at 36° | peak at 36° | peak at 36° | peak at 36° |\\n| 40 | - | peak at 43° | peak at 43° | peak at 43° |\\n| 45 | peak at 47° | - | peak at 45° | peak at 45° |\\n| 50 | - | - | - | - |\\n| 55 | peak at 57° | - | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The following planes can be observed: (100), (002), (101), (102), (110), (200), (111), (220), (311), and (400).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Initially, only h-CoO can be observed on the surface. After 2 doses od ozone, both h-CoO and c-CoO can be seen.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The (100), (002), and (101) correspond to the h-CoO, while the (200) crystal plane is related to the c-CoO.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of O3 doses increases, the CoO turns into c-Co3O4.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_7.jpg","caption":"Fig. 7. XPS spectra of Co 2p region for: a) initial CoO film; b) initial CoO film after two 1 s doses of $\\mathrm{O_3}$ at $250^{\\circ}\\mathrm{C}$ ; and c) initial CoO film after $300\\mathrm{CoO}$ thermal ALE cycles using sequential Hacac and $\\mathrm{O_3}$ exposures with Hacac last at $250^{\\circ}\\mathrm{C}$ . Satellite peaks, Shirley background, and fitting of Co $2\\mathrm{p}_{3 / 2}$ peak are shown by red, dark blue, and green and light blue lines, respectively. (For interpretation of the references to colour in this figure legend, the reader is referred to the web version of this article.)","id":"test/atomic-layer-etching/experimental-usecase/21/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_7","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":672,"height":772,"image_format":"jpeg","image_sha256":"385f647492b76f0342f49fb87138a352a9b9589803810d5181ca5729b7a19de5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":1,"width":662,"height":766}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the XPS spectra of the initial sample and of the CoO sample after 2 doses of O3 and an ALE cycle. The Co 2p1/, Co 2p3/2 and satellite peaks are highlighted.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Initial CoO | 2 dosed of O3 | After ALE |\\n| --- | --- | --- | --- |\\n| 805 | - | - | - |\\n| 800 | - | - | - |\\n| 795 | peak at 796 | peak at 795 | peak at 797 |\\n| 790 | - | - | - |\\n| 785 | peak at 786 | - | peak at 787 |\\n| 780 | peak at 781 | peak at 781 | peak at 782 |\\n| 775 | - | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3 species.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After 2 doses of ozone, the Co 2p1/2 increases, but decreases strongly after the ALE cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The CoO sample after 2 doses of ozone (O3).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After 2 doses of ozone, the CoO film is oxidized to CO3O4.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_8.jpg","caption":"Fig. 8. XRD data for CoO powder: (a) initial CoO powder; and (b) initial CoO powder after 15 Hacac exposures at $250^{\\circ}\\mathrm{C}$ . c-CoO structure is observed before and after Hacac exposures.","id":"test/atomic-layer-etching/experimental-usecase/21/fig_8","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_8","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":670,"height":725,"image_format":"jpeg","image_sha256":"d39cfd1b4269492deffc587d63358bf6d8fdf415f7885c6176e15a896357c430","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":3,"width":663,"height":716}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the X-ray diffraction patterns of the CoO powder, before and after Hacac exposure. Different crystal planes are highlighted.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2 Theta (degrees) | CoO after Hacac | CoO control |\\n| --- | --- | --- |\\n| 30 | peak at 32° | - |\\n| 35 | peak at 36° | peak at 36° |\\n| 40 | peak at 42° | peak at 42° |\\n| 45 | peak at 45° | - |\\n| 50 | - | - |\\n| 55 | peak at 59° | - |\\n| 60 | peak at 61° | peak at 61° |\\n| 65 | peak at 66° | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The (111), (200), and (220) crystal planes correspond to c-CoO.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The following ones can be observed: c-CoO and c-Co3O4.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The following crystal planes can be observed: (220), (111), (200), (400), (511), (220), and (440).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After the Hacac exposure, the c-CoO turns into c-Co3O4.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_9.jpg","caption":"Fig. 9. XRD data for $\\mathrm{Co_3O_4}$ powder: (a) initial $\\mathrm{Co_3O_4}$ powder; and (b) initial $\\mathrm{Co_3O_4}$ powder after 15 Hacac exposures at $250^{\\circ}\\mathrm{C}$ . c-CoO structure develops as Hacac exposures partially convert $\\mathrm{c - Co_3O_4}$ structure to c-CoO structure.","id":"test/atomic-layer-etching/experimental-usecase/21/fig_9","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_9","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":667,"height":711,"image_format":"jpeg","image_sha256":"7308284fa6ddf30df4d30e00bdee104ba132e717d3e46f8de96198b1f6261867","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":661,"height":706}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a spectra chart comparing the intensity of Co3O4 control, and the initial Co3O4 powder after 15 Hacac exposures at 250 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2 Theta (degrees) | Co3O4 after Hacac | Co3O4 control |\\n| --- | --- | --- |\\n| 30 | peak at 32°| peak at 32° |\\n| 35 | peak at 37°, 39° | peak at 37° |\\n| 40 | peak at 43° | peak at 43° |\\n| 45 | peak at 45° | - |\\n| 50 | - | - |\\n| 55 | peak at 56° | peak at 56° |\\n| 60 | peak at 60°, 62° | peak at 60° |\\n| 65 | peak at 66° | peak at 6° |\\n| 70 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"c_CoO crystal planes: (200) and (220), and c-Co3O4 crystal planes: (220), (311), (222), (400), (422), (511) and (440).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Just c-Co3O4 can be observed.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"(200) and (220) crystal planes, which correspond to c-CoO, and (220), (311), (222), (400), (422), (511) and (440), which correspond to c-Co3O4.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After 15 Hacac exposures, part of the c-Co3O4 turns into c-CoO.\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG13_a.jpg","caption":"Binding Energy (eV)","id":"test/atomic-layer-etching/experimental-usecase/47/FIG13_a","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG13_a","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG13_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG13_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":286,"height":450,"image_format":"jpeg","image_sha256":"b2b2f190c931c57a179b12a7048609b0d81afb8c45b43dac26142d58387cd068","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":6,"y":6,"width":278,"height":442}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Nb 3d XPS spectra after various ALE cycle stages.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Feature | Binding Energy Range (eV) | Peak Positions (eV) |\\n|---------------|----------------------------|----------------------|\\n| Nb 3d₅/₂ | 204 – 212 | ~207.5 |\\n| Nb 3d₃/₂ | 204 – 212 | ~210.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. The blue line corresponds to O2\\n, 2. The red line corresponds to NbCl5\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After the second NbCl5 pulse the amount of niobium on the surface is much higher than after the first pulse, but most of it is etched away by the following\\nNbCl5 pulse. Only a trace amount of niobium remains on the surface.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Nb 3d XPS spectra of a molybdenum thin film sample etched with 1–4 ALE cycles of NbCl5 and O2 at 300 °C, measured after each individual NbCl5 and O2 pulse\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG13_b.jpg","caption":"FIG. 13. (a) Nb 3d and (b) Cl 1s XPS spectra of a molybdenum thin film sample etched with 1-4 ALE cycles of $\\mathrm{NbCl}_5$ and $\\mathrm{O}_2$ at $300^{\\circ}\\mathrm{C}$ , measured after each individual $\\mathrm{NbCl}_5$ and $\\mathrm{O}_2$ pulse.","id":"test/atomic-layer-etching/experimental-usecase/47/FIG13_b","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG13_b","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG13_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG13_b.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":387,"height":450,"image_format":"jpeg","image_sha256":"fcb01fcb587513ff59fb18d1f51116b4b9f0e3806bc4bcfceccfe6ccbff42eb5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":35,"y":5,"width":349,"height":444}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the C1 spectra from XPS characterisation for NbCl₅ and O₂ across four cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle | Precursor | Binding Energy Range (eV) | Peak Position (eV) |\\n|-----------|-----------|----------------------------|---------------------|\\n| 1st | NbCl₅ | 196 – 202 | ~198.5 |\\n| 1st | O₂ | 196 – 202 | ~199.5 |\\n| 2nd | NbCl₅ | 196 – 202 | ~198.5 |\\n| 2nd | O₂ | 196 – 202 | ~199.5 |\\n| 3rd | NbCl₅ | 196 – 202 | ~198.5 |\\n| 3rd | O₂ | 196 – 202 | ~199.5 |\\n| 4th | NbCl₅ | 196 – 202 | ~198.5 |\\n| 4th | O₂ | 196 – 202 | ~199.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A significant chlorine content is evident from the Cl 1s spectrum, and a trace amount of niobium is also seen after the first NbCl5 pulse. The amount of chlorine on the surface decreases with each O2 pulse, but not all of it is removed. This was also verified by repeating the O2 pulse.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Overall, the Cl content of the surface increases during the repeated ALE cycles. These changes correspond to the relative intensity changes of Mo3+ observed in the Mo 3d spectra.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Blue line corresponds to O2\\n, 2. Red line is the NbCl5 spectra\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG14.jpg","caption":"FIG. 14. LEIS spectra of the molybdenum sample measured in vacuo after being heated and kept at $300^{\\circ}\\mathrm{C}$ for $20\\mathrm{min}$ and after different stages of the etching process for four ALE cycles. The observed peaks are marked with their respective element. Small peak seen at around $2700\\mathrm{eV}$ is due to the trace amount of Hf contamination from the reactor.","id":"test/atomic-layer-etching/experimental-usecase/47/FIG14","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG14","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG14.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":672,"height":547,"image_format":"jpeg","image_sha256":"acf9b37582080c0133938b6fbc74a57939708dd682b11363fff3d19264231862","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":670,"height":541}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure relates scattering yield with scattering energy for various cycles of etching and stopping at different pulses.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Element | Scattering Energy (eV) |\\n|---------|--------------------------|\\n| C | ~1000 |\\n| O | ~1500 |\\n| Cl | ~2000 |\\n| Nb/Mo | ~2500 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The LEIS spectrum measured with 3000 eV beam energy from the heated sample before the etching shows a distinct molybdenum peak at 2520 eV and its reionization background, as well as a peak for oxygen at 1160 eV and some carbon contamination around 820 eV\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After etching with NbCl5, the metal peak is highly attenuated, and a peak of chlorine is seen at 1930 eV. The oxygen peak is not visible after the first NbCl5 pulse, which indicates that the surface is mostly Cl terminated.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Nb and Mo are overlapping and cannot be distinguished from the spectrum due to their similar masses and the low incident ion mass\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Carbon is seen as an impurity in all the measurements. The metal peak and its reionization background intensity are significantly lower in the etched samples, compared to the surface before the etching is started. The lower intensity of the metal oxide indicates that the carbon contamination can start building up on the surface already in the beginning of the etching\"}]}]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG7.jpg","caption":"FIG. 7. Grazing incidence x-ray diffractograms of $55\\mathrm{nm}$ molybdenum film as-received and after partial etching at 300, 350, and $400^{\\circ}\\mathrm{C}$ . Thicknesses of the remaining films are 39, 18, and $31\\mathrm{nm}$ after etching at 300, 350, and $400^{\\circ}\\mathrm{C}$ , respectively. Vertical bars correspond to the reference data of cubic molybdenum from ICDD 00-042-1120.","id":"test/atomic-layer-etching/experimental-usecase/47/FIG7","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG7","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":669,"height":556,"image_format":"jpeg","image_sha256":"04204a33a3d52432044247393a9c79904cf1a59826822466b0d21e69e6ac9fef","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":661,"height":548}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows X-ray diffraction characterization for samples at different temperatures (400°C, 350°C, 300°C) and an unetched sample, along with a reference pattern.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ Position | (hkl) | 400 °C | 350 °C | 300 °C | Unetched | Reference (00-042-1120) |\\n|-------------|-------|--------|--------|--------|----------|--------------------------|\\n| ~40 | (110) | ✓ | ✓ | ✓ | ✓ | ✓ |\\n| ~50 | (200) | ✓ | ✓ | ✓ | ✓ | ✓ |\\n| ~65 | (211) | ✓ | ✓ | ✓ | ✓ | ✓ |\\n| ~75 | (220) | ✓ | ✓ | ✓ | ✓ | ✓ |\\n| ~95 | (310) | ✓ | ✓ | ✓ | ✓ | ✓ |\\n| ~115 | (222) | ✓ | ✓ | ✓ | ✓ | ✓ |\\n| ~130 | (321) | ✓ | ✓ | ✓ | ✓ | ✓ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"To evaluate the effect of the etching on the film's physical properties, samples were characterized before and after partial or complete etching using XRD.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. (110) = 40 °\\n, 2. (200) = 60 °\\n, 3. (211) = 78 °\\n, 4. (220) = 89 °\\n, 5. (310) = 102 °\\n, 6. (222) = 118 °\\n, 7. (321) = 131 °\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No change in crystallinity was seen after partial etching at 300–400 °C. This indicates that oxidation is limited to the surface layer, and the etchant does not modify the remaining film during the etching. This is in contrast to tantalum, which in our previousstudy showed considerable subsurface oxidation\"}]}]"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_1_figure_8.jpg","caption":"Figure 8. XRR scans for $\\mathrm{Al}_2\\mathrm{O}_3$ ALD films grown on $\\mathrm{Si}(100)$ using $300$ reaction cycles versus growth temperature from 33 to $177^{\\circ}\\mathrm{C}$ . The fits to the XRR data used to determine densities are shown by the solid lines.","id":"test/atomic-layer-deposition/experimental-usecase/1/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/1/figure_8","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays X‑ray reflectivity (XRR) intensity versus incident angle for films grown at different temperatures from 33 to 177 °C. The dots indicate experimental data, and the solid lines indicate fitted curves used to extract film density and thickness.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Source | θ (degrees) | Intensity (a.u.) |\\n|---| ---| ---| ---| \\n| 33 | Experimental | 0.05 | 27685.5733 |\\n| 33 | Experimental | 0.21 | 118369.3974 |\\n| 33 | Experimental | 0.27 | 7090.946772 |\\n| 33 | Experimental | 0.32 | 5160.313139 |\\n| 33 | Experimental | 0.39 | 1263.014832 |\\n| 33 | Experimental | 0.42 | 1263.014832 |\\n| 33 | Experimental | 0.48 | 282 |\\n| 33 | Experimental | 0.53 | 371 |\\n| 33 | Experimental | 0.59 | 76 |\\n| 33 | Experimental | 0.66 | 149.5023046 |\\n| 33 | Experimental | 0.73 | 27.86572986 |\\n| 33 | Experimental | 0.79 | 66.02650509 |\\n| 33 | Experimental | 0.86 | 8 |\\n| 33 | Experimental | 0.93 | 32 |\\n| 33 | Experimental | 0.99 | 15 |\\n| 33 | Experimental | 1.06 | 1 |\\n| 33 | Experimental | 1.12 | 1 |\\n| 33 | Experimental | 1.19 | 9 |\\n| 33 | Experimental | 1.25 | 0 |\\n| 33 | Experimental | 1.32 | 0 |\\n| 33 | Experimental | 1.38 | 0 |\\n| 33 | Fit | 0.01 | 186390 |\\n| 33 | Fit | 0.21 | 195048 |\\n| 33 | Fit | 0.28 | 6475.41498 |\\n| 33 | Fit | 0.32 | 4303.311825 |\\n| 33 | Fit | 0.37 | 1102.182525 |\\n| 33 | Fit | 0.42 | 1206.952395 |\\n| 33 | Fit | 0.48 | 295.4081924 |\\n| 33 | Fit | 0.52 | 370.6927434 |\\n| 33 | Fit | 0.60 | 72.30276894 |\\n| 33 | Fit | 0.67 | 130.4646813 |\\n| 33 | Fit | 0.73 | 22.20643655 |\\n| 33 | Fit | 0.79 | 69.09340882 |\\n| 33 | Fit | 0.86 | 6.820289616 |\\n| 33 | Fit | 0.92 | 29.16008143 |\\n| 33 | Fit | 0.99 | 2.293841366 |\\n| 33 | Fit | 1.05 | 13.47651082 |\\n| 33 | Fit | 1.12 | 0.884054162 |\\n| 33 | Fit | 1.19 | 8.178545165 |\\n| 33 | Fit | 1.25 | 0.311141361 |\\n| 33 | Fit | 1.32 | 4.743035094 |\\n| 33 | Fit | 1.38 | 0.28413264 |\\n| 58 | Experimental | 0.04 | 1046449.584 |\\n| 58 | Experimental | 0.22 | 4899376.842 |\\n| 58 | Experimental | 0.27 | 308964.918 |\\n| 58 | Experimental | 0.31 | 293498.3296 |\\n| 58 | Experimental | 0.35 | 38043.60731 |\\n| 58 | Experimental | 0.41 | 49956.44773 |\\n| 58 | Experimental | 0.46 | 7764.989004 |\\n| 58 | Experimental | 0.52 | 12227.1135 |\\n| 58 | Experimental | 0.58 | 1584.893192 |\\n| 58 | Experimental | 0.64 | 4516.425774 |\\n| 58 | Experimental | 0.71 | 370.6927434 |\\n| 58 | Experimental | 0.77 | 1263.014832 |\\n| 58 | Experimental | 0.83 | 94.94340189 |\\n| 58 | Experimental | 0.89 | 486.770156 |\\n| 58 | Experimental | 0.95 | 38.29116603 |\\n| 58 | Experimental | 1.02 | 224.963819 |\\n| 58 | Experimental | 1.08 | 34.69398579 |\\n| 58 | Experimental | 1.15 | 103.9684115 |\\n| 58 | Experimental | 1.22 | 33.415169 |\\n| 58 | Experimental | 1.30 | 63.09573445 |\\n| 58 | Experimental | 1.39 | 22.20643655 |\\n| 58 | Fit | 0.01 | 7372344.717 |\\n| 58 | Fit | 0.22 | 7045102.627 |\\n| 58 | Fit | 0.27 | 336326.0939 |\\n| 58 | Fit | 0.31 | 321397.3117 |\\n| 58 | Fit | 0.35 | 43594.99375 |\\n| 58 | Fit | 0.40 | 47736.99142 |\\n| 58 | Fit | 0.46 | 7420.318303 |\\n| 58 | Fit | 0.52 | 11684.37895 |\\n| 58 | Fit | 0.58 | 1584.893192 |\\n| 58 | Fit | 0.64 | 3755.328103 |\\n| 58 | Fit | 0.70 | 370.6927434 |\\n| 58 | Fit | 0.76 | 1584.893192 |\\n| 58 | Fit | 0.83 | 94.94340189 |\\n| 58 | Fit | 0.89 | 465.1635045 |\\n| 58 | Fit | 0.95 | 43.87867665 |\\n| 58 | Fit | 1.01 | 246.3481447 |\\n| 58 | Fit | 1.08 | 36.59150579 |\\n| 58 | Fit | 1.15 | 103.9684115 |\\n| 58 | Fit | 1.22 | 31.9319435 |\\n| 58 | Fit | 1.29 | 66.02650509 |\\n| 58 | Fit | 1.38 | 43.87867665 |\\n| 80 | Experimental | 0.04 | 21920226.17 |\\n| 80 | Experimental | 0.21 | 93719720.76 |\\n| 80 | Experimental | 0.26 | 6147979.269 |\\n| 80 | Experimental | 0.30 | 5614302.058 |\\n| 80 | Experimental | 0.35 | 1000000 |\\n| 80 | Experimental | 0.39 | 1313136.458 |\\n| 80 | Experimental | 0.44 | 293498.3296 |\\n| 80 | Experimental | 0.51 | 307131.205 |\\n| 80 | Experimental | 0.56 | 57246.17566 |\\n| 80 | Experimental | 0.61 | 103296.2385 |\\n| 80 | Experimental | 0.67 | 15343.18399 |\\n| 80 | Experimental | 0.73 | 39810.71706 |\\n| 80 | Experimental | 0.79 | 3588.637388 |\\n| 80 | Experimental | 0.84 | 14011.31424 |\\n| 80 | Experimental | 0.91 | 1098.357236 |\\n| 80 | Experimental | 0.97 | 5400.00754 |\\n| 80 | Experimental | 1.04 | 639.1956383 |\\n| 80 | Experimental | 1.10 | 2279.011302 |\\n| 80 | Experimental | 1.14 | 699.9554873 |\\n| 80 | Experimental | 1.22 | 1321.681346 |\\n| 80 | Experimental | 1.28 | 699.9554873 |\\n| 80 | Experimental | 1.34 | 1006.507236 |\\n| 80 | Experimental | 1.40 | 769.185523 |\\n| 80 | Fit | 0.01 | 102628411.2 |\\n| 80 | Fit | 0.21 | 98072962.84 |\\n| 80 | Fit | 0.27 | 5365095.597 |\\n| 80 | Fit | 0.30 | 5365095.597 |\\n| 80 | Fit | 0.34 | 913194.6958 |\\n| 80 | Fit | 0.39 | 1254849.232 |\\n| 80 | Fit | 0.44 | 307131.205 |\\n| 80 | Fit | 0.50 | 336326.0939 |\\n| 80 | Fit | 0.56 | 57246.17566 |\\n| 80 | Fit | 0.61 | 108094.3058 |\\n| 80 | Fit | 0.67 | 13389.38296 |\\n| 80 | Fit | 0.73 | 38043.60731 |\\n| 80 | Fit | 0.79 | 3755.328103 |\\n| 80 | Fit | 0.85 | 15343.18399 |\\n| 80 | Fit | 0.91 | 961.830604 |\\n| 80 | Fit | 0.97 | 4712.370587 |\\n| 80 | Fit | 1.03 | 699.9554873 |\\n| 80 | Fit | 1.08 | 1900.52348 |\\n| 80 | Fit | 1.16 | 610.8231565 |\\n| 80 | Fit | 1.21 | 1206.952395 |\\n| 80 | Fit | 1.27 | 639.1956383 |\\n| 80 | Fit | 1.34 | 961.830604 |\\n| 80 | Fit | 1.40 | 769.185523 |\\n| 102 | Experimental | 0.04 | 176964977 |\\n| 102 | Experimental | 0.23 | 791756339.3 |\\n| 102 | Experimental | 0.26 | 71370892.35 |\\n| 102 | Experimental | 0.28 | 102628411.2 |\\n| 102 | Experimental | 0.33 | 13302818.38 |\\n| 102 | Experimental | 0.36 | 17468415.81 |\\n| 102 | Experimental | 0.42 | 2715206.202 |\\n| 102 | Experimental | 0.47 | 5365095.597 |\\n| 102 | Experimental | 0.52 | 761535.476 |\\n| 102 | Experimental | 0.57 | 1647788.276 |\\n| 102 | Experimental | 0.63 | 233691.309 |\\n| 102 | Experimental | 0.68 | 833924.5525 |\\n| 102 | Experimental | 0.73 | 75172.04032 |\\n| 102 | Experimental | 0.78 | 268021.1178 |\\n| 102 | Experimental | 0.85 | 31725.4982 |\\n| 102 | Experimental | 0.90 | 128325.7474 |\\n| 102 | Experimental | 0.96 | 16801.65693 |\\n| 102 | Experimental | 1.01 | 68646.70849 |\\n| 102 | Experimental | 1.07 | 9311.380725 |\\n| 102 | Experimental | 1.12 | 27685.5733 |\\n| 102 | Experimental | 1.18 | 7090.946772 |\\n| 102 | Experimental | 1.24 | 16055.86851 |\\n| 102 | Experimental | 1.30 | 4712.370587 |\\n| 102 | Experimental | 1.35 | 13131.36979 |\\n| 102 | Experimental | 1.38 | 7090.946772 |\\n| 102 | Fit | 0.02 | 1304646813 |\\n| 102 | Fit | 0.22 | 1138513090 |\\n| 102 | Fit | 0.26 | 81785451.65 |\\n| 102 | Fit | 0.29 | 112383932.7 |\\n| 102 | Fit | 0.33 | 12148063.19 |\\n| 102 | Fit | 0.37 | 17468415.81 |\\n| 102 | Fit | 0.42 | 2911634.782 |\\n| 102 | Fit | 0.47 | 5365095.597 |\\n| 102 | Fit | 0.52 | 833924.5525 |\\n| 102 | Fit | 0.57 | 1574646.596 |\\n| 102 | Fit | 0.63 | 223509.3907 |\\n| 102 | Fit | 0.68 | 796908.4845 |\\n| 102 | Fit | 0.74 | 94329.57708 |\\n| 102 | Fit | 0.79 | 336326.0939 |\\n| 102 | Fit | 0.85 | 31310.8242 |\\n| 102 | Fit | 0.91 | 129621.2056 |\\n| 102 | Fit | 0.95 | 17582.08691 |\\n| 102 | Fit | 1.01 | 57246.17566 |\\n| 102 | Fit | 1.06 | 10670.11288 |\\n| 102 | Fit | 1.12 | 33199.1344 |\\n| 102 | Fit | 1.18 | 6187.98562 |\\n| 102 | Fit | 1.24 | 16266.6067 |\\n| 102 | Fit | 1.30 | 5160.313139 |\\n| 102 | Fit | 1.38 | 12795.05784 |\\n| 125 | Experimental | 0.05 | 2822956756 |\\n| 125 | Experimental | 0.23 | 11533784455 |\\n| 125 | Experimental | 0.27 | 949434018.9 |\\n| 125 | Experimental | 0.30 | 1191396550 |\\n| 125 | Experimental | 0.33 | 1656828977 |\\n| 125 | Experimental | 0.37 | 278657298.6 |\\n| 125 | Experimental | 0.43 | 39553334.18 |\\n| 125 | Experimental | 0.48 | 81785451.65 |\\n| 125 | Experimental | 0.54 | 9251181.108 |\\n| 125 | Experimental | 0.57 | 26285625.12 |\\n| 125 | Experimental | 0.63 | 2973304.832 |\\n| 125 | Experimental | 0.68 | 12148063.19 |\\n| 125 | Experimental | 0.74 | 1199149.248 |\\n| 125 | Experimental | 0.79 | 4303311.825 |\\n| 125 | Experimental | 0.85 | 529594.7388 |\\n| 125 | Experimental | 0.90 | 2479511.901 |\\n| 125 | Experimental | 0.96 | 293498.3296 |\\n| 125 | Experimental | 1.01 | 1095056.733 |\\n| 125 | Experimental | 1.07 | 195047.7052 |\\n| 125 | Experimental | 1.13 | 529594.7388 |\\n| 125 | Experimental | 1.19 | 113115.2414 |\\n| 125 | Experimental | 1.25 | 268021.1178 |\\n| 125 | Experimental | 1.31 | 98711.14674 |\\n| 125 | Experimental | 1.36 | 186389.9686 |\\n| 125 | Experimental | 1.38 | 123867.6067 |\\n| 125 | Fit | 0.02 | 22790113017 |\\n| 125 | Fit | 0.23 | 19005234799 |\\n| 125 | Fit | 0.26 | 1039684115 |\\n| 125 | Fit | 0.33 | 1342674991 |\\n| 125 | Fit | 0.38 | 296614457.7 |\\n| 125 | Fit | 0.43 | 185184926.6 |\\n| 125 | Fit | 0.47 | 319319435 |\\n| 125 | Fit | 0.53 | 36119894.98 |\\n| 125 | Fit | 0.58 | 85584351.89 |\\n| 125 | Fit | 0.64 | 10601128.84 |\\n| 125 | Fit | 0.69 | 30121267.25 |\\n| 125 | Fit | 0.74 | 3111413.606 |\\n| 125 | Fit | 0.79 | 12148063.19 |\\n| 125 | Fit | 0.85 | 1183693.974 |\\n| 125 | Fit | 0.90 | 5365095.597 |\\n| 125 | Fit | 0.96 | 579936.2843 |\\n| 125 | Fit | 1.01 | 2369451.848 |\\n| 125 | Fit | 1.08 | 268021.1178 |\\n| 125 | Fit | 1.13 | 1145921.663 |\\n| 125 | Fit | 1.19 | 170210.3307 |\\n| 125 | Fit | 1.24 | 554216.0441 |\\n| 125 | Fit | 1.30 | 113115.2414 |\\n| 125 | Fit | 1.36 | 268021.1178 |\\n| 125 | Fit | 1.38 | 94329.57708 |\\n| 177 | Experimental | 0.04 | 64754149804 |\\n| 177 | Experimental | 0.23 | 3.03173E+11 |\\n| 177 | Experimental | 0.26 | 23924719221 |\\n| 177 | Experimental | 0.30 | 26115684208 |\\n| 177 | Experimental | 0.35 | 2954081924 |\\n| 177 | Experimental | 0.40 | 5330409366 |\\n| 177 | Experimental | 0.44 | 791756339.3 |\\n| 177 | Experimental | 0.49 | 1564466245 |\\n| 177 | Experimental | 0.55 | 222064365.5 |\\n| 177 | Experimental | 0.61 | 438786766.5 |\\n| 177 | Experimental | 0.67 | 68202896.16 |\\n| 177 | Experimental | 0.73 | 193766693.5 |\\n| 177 | Experimental | 0.79 | 21920226.17 |\\n| 177 | Experimental | 0.84 | 78155176.19 |\\n| 177 | Experimental | 0.91 | 7714787.065 |\\n| 177 | Experimental | 0.96 | 34516612.66 |\\n| 177 | Experimental | 1.03 | 2841326.401 |\\n| 177 | Experimental | 1.09 | 16693031.44 |\\n| 177 | Experimental | 1.15 | 1087373.868 |\\n| 177 | Experimental | 1.21 | 10130568.16 |\\n| 177 | Experimental | 1.26 | 529594.7388 |\\n| 177 | Experimental | 1.33 | 5365095.597 |\\n| 177 | Experimental | 1.38 | 441642.0555 |\\n| 177 | Fit | 0.05 | 64754149804 |\\n| 177 | Fit | 0.23 | 2.76856E+11 |\\n| 177 | Fit | 0.26 | 2.52988E+10 |\\n| 177 | Fit | 0.29 | 28598155823 |\\n| 177 | Fit | 0.35 | 3385146471 |\\n| 177 | Fit | 0.39 | 5093804275 |\\n| 177 | Fit | 0.45 | 867018110.1 |\\n| 177 | Fit | 0.49 | 1495023046 |\\n| 177 | Fit | 0.55 | 254468367 |\\n| 177 | Fit | 0.61 | 502815261.2 |\\n| 177 | Fit | 0.67 | 68202896.16 |\\n| 177 | Fit | 0.73 | 195047705 |\\n| 177 | Fit | 0.79 | 22938413.66 |\\n| 177 | Fit | 0.84 | 81785451.65 |\\n| 177 | Fit | 0.91 | 8073135.718 |\\n| 177 | Fit | 0.96 | 34516612.66 |\\n| 177 | Fit | 1.03 | 2479511.901 |\\n| 177 | Fit | 1.09 | 17468415.81 |\\n| 177 | Fit | 1.15 | 1000000 |\\n| 177 | Fit | 1.21 | 8840541.623 |\\n| 177 | Fit | 1.27 | 483623.1064 |\\n| 177 | Fit | 1.33 | 4899376.842 |\\n| 177 | Fit | 1.38 | 483623.1064 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At lower angles (below 0.2 degrees).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film grown at the highest temperature (177 °C) appears to have the smoothest surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 177 °C growth temperature shows the highest critical angle.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":481,"height":411}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/images/figure_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/1/Groner et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":481,"height":411,"image_format":"jpeg","image_sha256":"5de9b4fa9feb19fc047739f89997c11a48f31f4c83776a63d2bc9f843a0a6683","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_6.jpg","caption":"FIG. 6. (Color online) Optical emission spectra of plasma radiation in (a) an $\\mathrm{O}_2$ plasma, (b) an $\\mathrm{H}_2$ plasma, and (c) an $\\mathrm{N}_2$ plasma as used for plasma-assisted ALD (operating pressure: 8 mTorr; plasma power: 100 W). The emission in the (vacuum) ultraviolet region was measured by means of a VUV monochromator and the emission in the visible by a simple spectrometer (Refs. 302, 303). Emission peaks were identified using the literature (Refs. 373-377). The insets show photographs of the corresponding plasmas.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_6","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The stacked spectra chart compares optical emission spectra from O₂, H₂, and N₂ plasmas. Each spectrum displays characteristic peaks at distinct wavelengths corresponding to specific electronic transitions: O₂⁺ and O emission lines, H₂ Lyman and Fulcher bands, and N₂ second positive and first negative systems. Insets show photographs of the respective plasma discharges, illustrating the visible color differences associated with each gas.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | O₂ Intensity (a.u.) | H₂ Intensity (a.u.) | N₂ Intensity (a.u.) |\\n|----------------|----------------------|----------------------|----------------------|\\n| 100 | 0.1 | 0.2 | 0.3 |\\n| 200 | 1.2 | 0.9 | 1.0 |\\n| 300 | 0.8 | 1.1 | 1.3 |\\n| 400 | 0.3 | 0.6 | 1.1 |\\n| 500 | 0.4 | 0.8 | 0.7 |\\n| 600 | 0.7 | 0.9 | 1.0 |\\n| 700 | 0.2 | 0.3 | 0.9 |\\n| 800 | 0.0 | 0.0 | 0.2 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Intensity (a.u.), corresponding to emission strength at each wavelength.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The O₂ plasma spectrum is dominated by O and O₂⁺ emission lines, the H₂ plasma shows strong Lyman and Fulcher bands, while the N₂ plasma displays distinct second positive and first negative system bands.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"O₂⁺ and O emission, H₂ Lyman and Fulcher bands, N₂ second positive and first negative systems\"}]}]","bbox":[{"panel_id":"a","x":25,"y":18,"width":586,"height":421},{"panel_id":"b","x":24,"y":474,"width":587,"height":421},{"panel_id":"c","x":25,"y":928,"width":586,"height":420}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":611,"height":1361,"image_format":"jpeg","image_sha256":"2c9d3f278ec84656fd96fe861bbdb0d1e92208d58eb74956e3873e2b9fd25acf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_15_fig_1.jpg","caption":"FIG. 1. X-ray diffraction patterns of BST films grown on (a) $\\mathrm{TiO_2 / Si}$ and (b) $\\mathrm{Ta}_2\\mathrm{O}_5 / \\mathrm{Si}$ substrates.","id":"test/atomic-layer-deposition/experimental-usecase/15/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/15/fig_1","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays X-ray diffraction patterns for 500nm Ba0.6Sr0.4TiO3 (BST) thin films deposited on Si substrates with different buffer layers, i) Buffer layer of 50nm TiO2 ii) Buffer layer of 50nm Ta2O5\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (degree) | Intensity (arb. units) a BST/TiO2/Si | Intensity (arb. units) a BST/Ta2O5/Si |\\n|---|---|---|\\n| 22 | BST (100) | BST (100) |\\n|27 | TiO₂ (101) | - |\\n| 33 | BST (110) | BST (110) |\\n| 38 | - | Ta₂O₅ (200) |\\n| 40 | BST (111) | BST (111) |\\n| 45 | BST (200) | BST (200) | \\n| 52 | BST (210) | BST (210) |\\n| 56 | BST (211) | BST (211) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"BST (110) is present and it has the highest intensity in both cases BST/TiO2/Si and BST/Ta2O5/Si\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For BST/Ta2O5/Si, the following BST peaks are observed\\n(100)\\n(110)\\n(111)\\n(200)\\n(211)\\n\\n and for BST/TiO2/Si\\n(100)\\n(110)\\n(200)\\n(211)\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For Ta2O5, the (200) oriented peaks at 27 and 38 degrees can be seen as tiny bumps and TiO2 the (101) orientation is seen around 25 degree. These peaks are very small in intensity compared to the rest of the BST peaks.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":6,"width":541,"height":665}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/images/fig_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/15/Il-Doo Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":542,"height":672,"image_format":"jpeg","image_sha256":"67acac6cc72ab8266144e06dd2cc92882a59fcd869c86848bd25b6912ad5526a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_19_fig_5.jpg","caption":"Fig. 5 Grazing incidence X-ray diffraction patterns of selected $\\mathrm{ZrO_2}$ thin films grown from $(\\mathrm{CpMe})_2\\mathrm{Zr(OMe)Me}$ and $(\\mathrm{CpMe})_2\\mathrm{ZrMe}_2$ . The deposition temperature was $350^{\\circ}\\mathrm{C}$ and film thickness $60 - 70\\mathrm{nm}$ . Miller indices are assigned to correspond the monoclinic and cubic phases of $\\mathrm{ZrO_2}$ .","id":"test/atomic-layer-deposition/experimental-usecase/19/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/19/fig_5","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows an X-ray diffraction (XRD) patterns of a thin film deposited using the precursor (CpMe)₂Zr(OMe)Me and (CpMe)₂ZrMe. The pattern indicates the film is crystalline, with peaks labeled at specific 2θ angles. Multiple phases are present and the corresponding diffraction peaks labeled \\\"M\\\" and \\\"C\\\" correspond to monoclinic and cubic phases respectively .\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (degree) | Miller index | Precursor |\\n|-------------|--------------|-------------------------------|\\n| 28.5 | 111_M | (CpMe)₂Zr(OMe)Me |\\n| 28.5 | 111_M | (CpMe)₂ZrMe |\\n| 30.5 | 111_C | (CpMe)₂Zr(OMe)Me |\\n| 30.5 | 111_C | (CpMe)₂ZrMe |\\n| 30.0 | 111_M |(CpMe)₂Zr(OMe)Me |\\n| 34.0 | 020_M | (CpMe)₂Zr(OMe)Me |\\n| 34.0 | 020_M | (CpMe)₂ZrMe |\\n| 41.0 | -112_M | (CpMe)₂Zr(OMe)Me |\\n| 41.0 | -112_M | (CpMe)₂Zr(Me |\\n| 48.0 | 220_M | (CpMe)₂Zr(OMe)Me |\\n| 51.5 | -221_M | (CpMe)₂Zr(OMe)Me |\\n| 51.5 | -221_M | (CpMe)₂ZrMe |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Phase: Monoclinic ZrO₂.\\n\\nLattice Plane: Diffraction from the (111) crystal planes.\\n\\nEvidence: Confirms long-range crystalline order in the film.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The monoclinic (111) peak is significantly more intense than the cubic (111) peak. This suggests the film is predominantly monoclinic phase, with the cubic phase present as a minor component. The relative peak intensities provide a qualitative measure of the phase fraction in the mixed-phase film.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It maps to enhanced fracture toughness due to phase transformation toughening, a key property for thermal barrier coatings.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This film is more suitable for a thermal barrier coating. The predominant monoclinic phase is stable at lower temperatures, while the presence of the metastable cubic phase is beneficial for toughness in coating applications. For a gate dielectric, a pure, stable amorphous or cubic phase would be preferred to ensure consistent electrical properties.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":473,"height":349}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/19/Jaakko Niinisto et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":477,"height":352,"image_format":"jpeg","image_sha256":"c4d4186140f8cd44855bd20e28793172c6ac43e5b8a96dd31041d76e2eaa0f60","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_21_fig_7.jpg","caption":"Fig. 7 XRD gonio scans of $\\sim 50 \\mathrm{nm}$ thick $\\mathrm{Li_2CO_3}$ films grown on TiN using thermal (blue) and plasma (red) ALD at different processing temperatures. The bars in the lower panel indicate the expected diffraction from a $\\mathrm{Li_2CO_3}$ powder sample. The reflections at $\\sim 42.5$ originate from the TiN (200) textured substrate.","id":"test/atomic-layer-deposition/experimental-usecase/21/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/21/fig_7","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays X-ray diffraction patterns for TiN samples prepared at different temperatures with reference peaks\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Process | Temperature (°C) | Main Peaks Observed (2θ °) |\\n|----------|-------------------|-----------------------------|\\n| Thermal | 300 | ~36, ~42, ~62 |\\n| Thermal | 150 | ~36, ~42, ~62 |\\n| Thermal | 100 | ~36, ~42, ~62 |\\n| Plasma | 250 | ~36, ~42, ~62 |\\n| Plasma | 150 | ~36, ~42, ~62 |\\n| Plasma | 50 | ~36, ~42, ~62 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The gonio measurements, which detect periodicity of planes parallel to the surface, show only the peak at 31.7°, meaning the process yields a preferential crystal growth orientation in the <002> direction.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For thermal ALD films, the crystallinity increases slightly with increasing deposition temperature. A similar trend was observed in literature for thermal ALD of Li2CO3 on Si (100) substrates using a LiN(SiMe3)2 precursor, although the crystalline growth started only at 180 °C according to their XRD spectra. The\\nonset for crystalline growth could thus be influenced by the precursor, the substrate or a combination of both.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"When considering the plasma ALD Li2CO3 films, the layer deposited at 50 °C is highly crystalline and oriented in the <002>direction, similar to the thermal process. At higher deposition temperatures, the spectra change significantly and the crystallinity seems to be suppressed.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":3,"width":612,"height":522}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/21/N. Hornsveld et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":616,"height":525,"image_format":"jpeg","image_sha256":"11f04d8d1eed1f0d964b5bf3140a9a785dc26250a2ab3eb7e395d20396c09306","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_23_figure_2.jpg","caption":"Figure 2. (a) In situ FTIR difference spectra following 1, 3, and 5 TMGa- $\\mathrm{H}_2\\mathrm{O}$ exposures and one $\\mathrm{O}_3$ exposure at $350^{\\circ}\\mathrm{C}$ . (b) Enlarged image of symmetric $\\mathrm{CH}_3$ deformation feature during first TMGa- $\\mathrm{H}_2\\mathrm{O}$ cycle and first $\\mathrm{O}_3$ exposure. Initial feature due to TMGa adsorption on $\\mathrm{Al}_2\\mathrm{O}_3$ surface consists of peaks at 1209 and $1220~\\mathrm{cm^{-1}}$ . $\\mathrm{H}_2\\mathrm{O}$ exposure removes only the peak at $1209~\\mathrm{cm^{-1}}$ , whereas $\\mathrm{O}_3$ exposure removes the peak at $1220~\\mathrm{cm^{-1}}$ .","id":"test/atomic-layer-deposition/experimental-usecase/23/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/23/figure_2","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"In situ FTIR difference spectra following 1, 3, and 5 TMGa-H2O exposures and one O3 exposure at 350 °C.\"},{\"panel_id\":\"b\",\"text\":\"Enlarged image of symmetric CH3 deformation feature during first TMGa-H2O cycle and first O3 exposure.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD Step | Wavenumber (cm⁻¹) |\\n|---|---|\\n| 1st TMGa | Trough at 3730; Peaks at 1215, 2915, 2975 |\\n| 1st Water | Troughs at 1215, 2915, 2975; Peak at 3730 |\\n| 1st Ozone | Troughs at 1215, 2915, 2975; Peaks at 1372, 1586, 3730 |\\n| 3rd TMGa | |\\n| 3rd Water | |\\n| 5th TMGa | |\\n| 5th Water | |\"},{\"panel_id\":\"b\",\"text\":\"| ALD Step | Wavenumber (cm⁻¹) |\\n|---|---|\\n| 1st TMGa | Peaks at 1209, 1220 |\\n| 1st Water | Trough at 1209 |\\n| 1st Ozone | Trough at 1220 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 2915 and 2975 cm^-1, respectively.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 3730 cm^-1.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There are noticeable peaks and troughs after the first cycle. After three cycles, the changes are practically negligible and after five cycles, no changes are observed. This is an indication that no species are reacting or desorbing after 5 cycles of water and TMGa exposure.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Two peaks appear at 1209 and 1220 cm^-1.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":3,"width":537,"height":524},{"panel_id":"b","x":532,"y":4,"width":466,"height":525}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/David J. Comstock et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":1075,"height":530,"image_format":"jpeg","image_sha256":"61fd682c26b0056a2d6974e3c5d3965e1a41150b35e74b4d60ade355aa920589","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_23_figure_3.jpg","caption":"Figure 3. In situ FTIR difference spectra following consecutive TMGa- $\\mathrm{O}_3$ exposures at $350^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-deposition/experimental-usecase/23/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/23/figure_3","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows in situ FTIR difference spectra following consecutive TMGa-O3 exposures at 350 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| ALD Step | Wavenumber (cm⁻¹) |\\n|---|---|\\n| 1st TMGa | Trough at 1372, 1586, 3730; Peaks at 1215, 2915, 2975 |\\n| 1st Ozone | Troughs at 1215, 2915, 2975; Peaks at 1372, 1586, 3730 |\\n| 2nd TMGa | Trough at 1372, 1586, 3730; Peaks at 1215, 2915, 2975 |\\n| 2nd Ozone | Troughs at 1215, 2915, 2975; Peaks at 1372, 1586, 3730 |\\n| 3rd TMGa | Trough at 1372, 1586, 3730; Peaks at 1215, 2915, 2975 |\\n| 3rd Ozone | Troughs at 1215, 2915, 2975; Peaks at 1372, 1586, 3730 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"350 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 1372 and 1586 cm^-1.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During TMGa exposure, an increase is observed at three positions and a decrease is observed at three other positions. During Ozone exposure, the exact opposite changes are observed. This is an indication that the same species desorb/react during each ALD cycle.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":486,"height":483}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/David J. Comstock et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":486,"height":483,"image_format":"jpeg","image_sha256":"6bc8a4417ec6f886e55672347b5158e775e1a1bd66c719710cab6323e6151a1a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_23_figure_5.jpg","caption":"Figure 5. In situ QMS measurements during $\\mathrm{Ga}_2\\mathrm{O}_3$ ALD using TMGa and $\\mathrm{O}_3$ where the individual precursor exposures are indicated by the lower traces.","id":"test/atomic-layer-deposition/experimental-usecase/23/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/23/figure_5","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":498,"height":486}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/23/David J. Comstock et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"23","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":498,"height":486,"image_format":"jpeg","image_sha256":"372ca185c011cb7f1151ebbd6fa96579bc773dd3fbc7f8035a66bcc6bc51b10d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_24_figure_6.jpg","caption":"Figure 6. GI-XRD spectra of $\\mathrm{TiO_2}$ films on ruthenium and titanium nitride at different temperatures. The films have an anatase crystal structure when deposited on TiN, and the crystal structure does not change with increasing temperature. Films deposited on ruthenium are amorphous. With increasing temperature the films crystallize in the rutile structure.","id":"test/atomic-layer-deposition/experimental-usecase/24/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/24/figure_6","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The GI-XRD patterns show that the crystal structure of TiO₂ thin films strongly depends on the substrate and temperature. Films grown on TiN crystallize directly into the anatase phase (2θ ≈ 25.3°) even at low temperatures and remain stable up to 600 °C, while films on Ru are amorphous at low temperature and transform into the rutile phase (2θ ≈ 27.5°) only after high-temperature annealing. This demonstrates that substrate-induced effects control TiO₂ polymorph formation and thermal crystallization behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Substrate | Anneal temperature (°C) | 2θ (°) | Phase / peak assignment |\\n|------------------|-------------------------:|-------:|----------------------------|\\n| TiN | 100 | 24 | TiO₂ anatase |\\n| TiN | 100 | 27 | TiO₂ rutile |\\n| TiN | 600 | 24 | TiO₂ anatase |\\n| TiN | 600 | 27 | TiO₂ rutile |\\n| Ru (ruthenium) | 100–900 | 38–44 | Ru substrate peaks (set) |\\n| TiO₂ on Ru | 100–900 | 24–27 | Mixed anatase / rutile TiO₂|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The top set of curves explicitly shows the \\\"TiO₂ Anatase\\\" peak at ~25degrees for films grown on TiN. In contrast, the Ruthenium substrate promotes the Rutile phase or amorphous growth, making TiN the mandatory choice for achieving the Anatase polymorph.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To achieve the high-k Rutile phase on Ruthenium, the data shows the process requires high temperatures (approaching 900°C) to produce strong, sharp diffraction peaks. This high thermal budget might damage other sensitive components on the chip (e.g., melting interconnects or degrading dopant profiles), representing a significant manufacturing constraint compared to the lower-temperature Anatase process on TiN.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Transition from Amorphous to Crystalline (Rutile).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The persistence of the sharp metallic Ruthenium peaks suggests good interfacial stability. It implies that the Ruthenium substrate does not completely oxidize (turning into volatile RuO4 or diffuse massively into the TiO₂ to destroy the interface, even at 900°C. If the interface failed or reacted significantly, these substrate peaks would diminish, broaden, or shift, none of which is observed here.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":626,"height":495}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/24/Martin Rose et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":627,"height":498,"image_format":"jpeg","image_sha256":"8128c8751fd2adc89eb7f2d5c1eb8fd1ec8cdcd1a542ef86f98857f263c7206c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_48_fig_4.jpg","caption":"FiG. 4. (Color online) GI-XRD diffractogram for $32\\mathrm{nm}$ thick $\\mathrm{HfO_2}$ films prepared by ALD. The substrate stage temperatures during deposition are indicated by the labels. The subscripts M, T, and C at indices denote monoclinic, tetragonal, and cubic phases, respectively. The spectra show a clear temperature dependence of the $\\mathrm{HfO_2}$ film crystallinity with a transition from amorphous to polycrystalline films embarking at a temperature of $300^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-deposition/experimental-usecase/48/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/48/fig_4","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays X-ray diffraction patterns for films deposited at different temperatures (200 C°, 300 C°, 350 C°, 400 C°). The films become less amorphous with increasing temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Temperature C°| Approx. 2θ (°) | Counts, a.u | Annotated reflection(s) | Phase |\\n|---|---|---|---|---|\\n|200 | 20| 51| - | - |\\n|200 | 30| 118| - | - |\\n|200 | 35| 96| - | - |\\n|200 | 50| 51| - | - |\\n|300 | 20| 22| - | - |\\n|300 | 28| 111| (-111) | M |\\n|300 | 30| 94| - | - |\\n|300 | 50| 22| - | - |\\n|350 | 20| 50| - | - |\\n|350 | 24| 85| (110) | M |\\n|350 | 28| 290| (111) | M |\\n|350 | 30| 120| (101), (111) | T,C |\\n|350 | 32| 124| (111) | M |\\n|350 | 34| 88| (200), (020) | M |\\n|350 | 36| 91| (011), (002) | T,C |\\n|350 | 41| 74| (-112) | M |\\n|350 | 46| 62| (-202) | M |\\n|350 | 50| 70| (-221),(022),(022) | M,C |\\n|400 | 20| 50| - | - |\\n|400 | 24| 89| (110) | M |\\n|400 | 28| 532| (-111) | M |\\n|400 | 30| 139| (101), (111) | T,C |\\n|400 | 32| 136| (111) | M |\\n|400 | 34| 116| (200), (020) | M |\\n|400 | 36| 104| (011), (002) | T,C |\\n|400 | 36| 117| (-201) | M |\\n|400 | 41| 153| (-112) | M |\\n|400 | 46| 127| (-202) | M |\\n|400 | 49| 95| (220) | M |\\n|400 | 50| 111| (-221),(022),(022) | M,C |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"200 C°, 300 C°, 350 C°, 400 C°\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film at 200 C° shows no resolved diffraction peaks.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Monoclinic phase.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The (-111) peak at ~28° (2θ) is visible by 300, 350 and 400 C°.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":602,"height":428}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/Sharma et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"48","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":602,"height":428,"image_format":"jpeg","image_sha256":"27a1ae54f1447da6af9d0d704fcb2aa69057693a3b6172d3c3cd879b860feee4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_51_fig_6.jpg","caption":"Fig. 6 XPS spectra of the Mo3d doublet of $\\mathrm{MoO}_x$ films grown in PE-ALD processes with varying plasma step","id":"test/atomic-layer-deposition/experimental-usecase/51/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/51/fig_6","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays an XPS chart of the Mo 3d doublet of MoOx with the results of three samples superimposed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | binding energy (eV) |\\n|---|---|\\n| 2 second O2 | Peaks at 232.5 and 235.5 |\\n| 2 second O2 & Ar | Peaks at 232.5 and 235.5 |\\n| 1 second O2 | Peaks at 232.5 and 235.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mo 3d5/2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mo 3d3/2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This should be 5:3.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No, they do not differ. This means that the oxidation state of Mo and its chemical environment are the same.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":639,"height":578}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/Ziegler et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":639,"height":578,"image_format":"jpeg","image_sha256":"c40cdafca4b1c8745d4c1f3b702581f88f3576cff16ebffe339155bcc7d925de","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_51_fig_7.jpg","caption":"Fig. 7 XPS spectra of O 1s energy region of $\\mathrm{MoO}_x$ films grown in PE-ALD processes with varying plasma step","id":"test/atomic-layer-deposition/experimental-usecase/51/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/51/fig_7","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays an XPS chart of the O 1s energy region of MoOx with the results of three samples superimposed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Binding energy (eV) |\\n|---|---|\\n| 2 second O2 | Peaks at 530.2 and 531.8 |\\n| 2 second O2 & Ar | Peaks at 530.2 and 531.8 |\\n| 1 second O2 | Peaks at 530.2 and 531.2 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"530.3 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The one at 531.3 eV, which also shifts to 531.8 eV.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"531.3 eV\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"x = 3.15.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":656,"height":594}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/51/Ziegler et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"51","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":656,"height":594,"image_format":"jpeg","image_sha256":"e14a89852eee9e3a47ebe654c8d5b2cd5c9ff86ffce72507f50d2260af93f49a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_56_figure_1.jpg","caption":"Figure 1. XRD patterns of $40\\mathrm{nm}\\mathrm{Li}_3\\mathrm{PO}_4$ films deposited at different processing temperatures. Crystallinity of the layers is seen to increase with increasing temperature.","id":"test/atomic-layer-deposition/experimental-usecase/56/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/56/figure_1","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays multiple XRD patterns of Li₃PO₄ at different temperatures (200 °C, 225 °C, 250 °C and 275 °C) with intensity plotted against 2θ. Vertical blue lines indicate specific peaks.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ | Li₃PO₄ 200°C | Li₃PO₄ 225°C | Li₃PO₄ 250°C | Li₃PO₄ 275°C | Li₃PO₄ Orthorom |\\n|---|---|---|---|---|---|\\n| 15 | - | - | - | - | peak at ~17° |\\n| 20 | - | - | peak at ~23° | peak at ~23° | peak at ~20°,~22°, ~23° |\\n| 25 | - | - | - | peak at ~25° | peak at ~25°, 29° |\\n| 30 | peak at ~34° | peak at ~34° | peak at ~34° | - | peak at ~34° |\\n| 35 | - | peak at ~37° | peak at ~37° | peak at ~37° | peak at ~36°, 37 ° |\\n| 40 | - | - | - | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The blue lines represent specific peaks related to the Li3PO4 orthotom.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the deposition temperature increases, more and clearer peaks appear in the spectra.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 250 °C and 275 °C more peaks related to Li3PO4 can be observed.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the deposition temperature decreases, the crystallinity of Li3PO4 films decreases.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":1,"width":673,"height":391}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/56/Put et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"56","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":678,"height":392,"image_format":"jpeg","image_sha256":"814ea2570b767b45390554dbc45df99e7fdcc78ae0bfce7c415fc6dbce3d8560","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_67_FIG2_c.jpg","caption":"FIG. 2. (a) GPC of $\\mathrm{VO}_{\\mathrm{x}}$ as a function of plasma pulse duration at 850 and $1600\\mathrm{mTorr}$ . Normalized Raman spectra of $\\mathrm{VO}_{\\mathrm{x}}$ deposited as a function of plasma pulse duration at 850 (b) and $1600\\mathrm{mTorr}$ (c). (d) XPS-derived N and C atomic % as a function of plasma pulse duration at 850 and $1600\\mathrm{mTorr}$ .","id":"test/atomic-layer-deposition/experimental-usecase/67/FIG2_c","sample_id":"atomic-layer-deposition/experimental-usecase/67/FIG2_c","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"c","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"c\",\"text\":\"This stacked spectra chart shows Raman spectra collected under 1600 mTorr pressure for different exposure durations ranging from 5 to 80 seconds. As the plasma exposure time increases, the peak intensities generally decrease, particularly for bands associated with Ag and Al₂O₃ vibrational modes. This suggests a progressive structural or compositional change over time, which is clearly visualised through the staggered spectral layout.\"}]","data_extraction":"[{\"panel_id\":\"c\",\"text\":\"| Raman shift (cm⁻¹) | 5 s | 10 s | 15 s | 20 s | 30 s | 40 s | 60 s | 80 s |\\n|--------------------|-----|------|------|------|------|------|------|------|\\n| 150 | 0.90| 0.85 | 0.80 | 0.75 | 0.60 | 0.50 | 0.40 | 0.35 |\\n| 300 | 0.50| 0.45 | 0.40 | 0.38 | 0.30 | 0.25 | 0.22 | 0.20 |\\n| 450 | 0.40| 0.35 | 0.32 | 0.30 | 0.28 | 0.26 | 0.24 | 0.22 |\\n| 600 | 0.60| 0.58 | 0.55 | 0.50 | 0.48 | 0.45 | 0.43 | 0.40 |\\n| 800 | 0.70| 0.68 | 0.65 | 0.60 | 0.58 | 0.55 | 0.52 | 0.50 |\\n| 1000 | 0.90| 0.88 | 0.85 | 0.82 | 0.80 | 0.78 | 0.75 | 0.72 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The decrease in Raman peak intensity with increased exposure time indicates a reduction in crystallinity or a transformation in the chemical composition of the material. As the plasma treatment continues, it may disrupt the ordered lattice structure, especially for compounds like Ag and Al₂O₃, leading to diminished signal intensity. This change reflects progressive material modification, likely due to ion bombardment or etching effects over time.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"150 cm⁻¹ (B₁g peak)\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Tracks film integrity, Assesses crystallinity loss, Identifies degradation threshold, Links treatment to material properties\"}]}]","bbox":[{"panel_id":"c","x":0,"y":0,"width":698,"height":559}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG2_c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/images/FIG2_c.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/67/P. M. Litwin et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"67","first_classification_panel_id":"c","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":698,"height":559,"image_format":"jpeg","image_sha256":"6a69ed89703e54dcc235e178509d59d6786c85bb656f3ade93e489133319d802","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_33_figure_4.jpg","caption":"Figure 4. Raman spectra of the different graphene samples after each processing step: transfer, plasma treatment, 100 cycles $\\mathrm{Al}_2\\mathrm{O}_3$ ALD, and $400^{\\circ}\\mathrm{C}$ anneal for a) untreated graphene, b) $30\\mathrm{~s~O_2}$ plasma treated graphene, and c) $35\\mathrm{~s~H_2}$ plasma treated graphene. The spectra are normalized to the 2D band and are offset for clarity.","id":"test/atomic-layer-deposition/simulation-usecase/33/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/33/figure_4","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays Raman spectra of pristine, Al₂O₃ ALD, and 400°C annealed samples.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows Raman spectra of pristine, O₂ plasma treated, Al₂O₃ ALD, and 400°C annealed samples.\"},{\"panel_id\":\"c\",\"text\":\"The figure presents Raman spectra of pristine, H₂ plasma treated, Al₂O₃ ALD, and 400°C annealed samples.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Raman Shift, cm⁻¹ | Pristine | Al₂O₃ ALD | 400°C Anneal |\\n|---|---|---|---|\\n| 1350 | 0.03 | 0.15 | 0.10 |\\n| 1580 | 0.45 | 1.00 | 1.00 |\\n| 2700 | 1.00 | 0.75 | 0.65 |\"},{\"panel_id\":\"b\",\"text\":\"| Raman Shift, cm⁻¹ | Pristine | O₂ Plasma | Al₂O₃ ALD | 400°C Anneal |\\n|---|---|---|---|---|\\n| 1350 | 0.03 | 0.65 | 0.55 | 0.35 |\\n| 1580 | 0.45 | 1.00 | 1.00 | 1.00 |\\n| 2700 | 1.00 | 0.85 | 0.90 | 0.55 |\"},{\"panel_id\":\"c\",\"text\":\"| Raman Shift, cm⁻¹ | Pristine | H₂ Plasma | Al₂O₃ ALD | 400°C Anneal |\\n|---|---|---|---|---|\\n| 1350 | 0.03 | 0.45 | 0.30 | 0.15 |\\n| 1580 | 0.45 | 1.00 | 1.00 | 1.00 |\\n| 2700 | 1.00 | 0.80 | 0.95 | 0.55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They are normalized to the 2D band.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The paper states that the Raman D band is associated with defects in graphene or with covalent functionalization that introduces sp3 character. After both O2 and H2 plasma, a D band appears, consistent with disruption of the sp2 lattice and formation of out of plane bonds. The differing reversibility, especially the disappearance of the D band for H2 after annealing, indicates that at least part of the D band can come from removable surface groups rather than permanent lattice damage.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Raman data show that plasma pretreatments create functionalization needed for ALD nucleation, but they also introduce a D band that signals degraded graphene quality. The decrease of the D band after Al2O3 ALD suggests partial removal of surface groups or passivation during deposition, which aligns with the mobility recovery discussed later. The full removal of the D band for the H2 plasma case after 400 C anneal supports a process route where functionalization can be reversed, improving the chance of maintaining high mobility after dielectric integration.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"O2 plasma: strong D band after plasma, reduced after ALD, still present after 400 C anneal.\\n\\nH2 plasma: weaker D band after plasma, reduced after ALD, absent after 400 C anneal.\"}]}]","bbox":[{"panel_id":"a","x":81,"y":25,"width":544,"height":392},{"panel_id":"b","x":80,"y":475,"width":545,"height":392},{"panel_id":"c","x":80,"y":926,"width":545,"height":393}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":625,"height":1375,"image_format":"jpeg","image_sha256":"8090492a05836df09d5fdbe10b44d9f0eaafbb8c52af454a65826910500355ee","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_33_figure_6.jpg","caption":"Figure 6. Hydrogen plasma reversibility for a graphene sample exposed for $35~\\mathrm{s}$ to $\\mathrm{H}_2$ plasma and annealed at 200 and $400^{\\circ}\\mathrm{C}$ . a) Raman spectra and b) mobility determined from Hall measurements after the different processing steps. The pristine graphene sample was annealed at $400^{\\circ}\\mathrm{C}$ before the Hall measurement to exclude the influence of annealing effects on the mobility.","id":"test/atomic-layer-deposition/simulation-usecase/33/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/33/figure_6","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Raman spectra for pristine graphene, after 35 s H2 plasma, and after anneals at 200 C and 400 C. The H2 plasma introduces a clear D band near 1350 cm1, and the 400 C anneal removes it, consistent with reversible hydrogenation.\"},{\"panel_id\":\"b\",\"text\":\"Hall mobility after the same steps, with the pristine reference annealed at 400 C before the Hall measurement. Mobility drops after H2 plasma, then recovers after 200 C and rises further after 400 C to above the initial value.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Raman Shift, cm⁻¹ | Peak | Pristine | H₂ Plasma | 200°C Anneal | 400°C Anneal |\\n|---|---|---|---|---|---|\\n| 1350 | D | 0.05 | 0.15 | 0.12 | 0.08 |\\n| 1580 | G | 0.55 | 0.70 | 0.75 | 0.80 |\\n| 2450 | D+D' | 0.05 | 0.08 | 0.06 | 0.05 |\\n| 2700 | 2D | 1.00 | 0.45 | 0.50 | 0.55 |\"},{\"panel_id\":\"b\",\"text\":\"| Treatment Stage | Mobility (cm²/(V·s)) |\\n|---|---|\\n| Pristine | 1250 |\\n| H₂ Plasma | 400 |\\n| 200°C Anneal | 900 |\\n| 400°C Anneal | 1700 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After H2 plasma, the D band appears and mobility drops strongly.\\n\\nAfter 200 C anneal, the D band decreases and mobility partially recovers. \\n\\nAfter 400 C anneal, the D band disappears and mobility increases to above the initial value.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The D band after H2 plasma is consistent with covalent functionalization that introduces sp3 character, rather than permanent lattice damage. After annealing at 400 C, hydrogen desorbs and the sp2 network is restored, so the D band disappears. This supports the claim that the H2 plasma effect is reversible under these conditions.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"To exclude mobility changes that come only from annealing, so the comparison isolates the effects of H2 plasma and the later anneals.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After the 400 C anneal, mobility exceeds the starting value in this reversibility test, showing that the process can yield net improvement rather than only recovery. The paper suggests this can arise from residue removal by the H2 plasma and from beneficial effects of the Al2O3 overlayer after annealing, such as screening of charged impurities. This supports an ALD integration route that enables nucleation while avoiding a lasting mobility penalty.\"}]}]","bbox":[{"panel_id":"a","x":10,"y":11,"width":625,"height":411},{"panel_id":"b","x":653,"y":5,"width":621,"height":417}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/figure_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":1275,"height":458,"image_format":"jpeg","image_sha256":"45c3e6d2190d3d18954736d6cfb204a097d9ead06f821e12d48a0bdd8d92ace4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_34_figure_1.jpg","caption":"Figure 1. XPS spectra of the core level C 1s of a) pristine graphene, b) graphene after 5 min of $\\mathsf{H}_{2}$ plasma treatment, and c) graphene after 5 min $\\Omega_2$ plasma treatment. Both plasma treatments were performed at a pressure of $50~\\mathrm{mTorr}$ and power of $100W$","id":"test/atomic-layer-deposition/simulation-usecase/34/figure_1","sample_id":"atomic-layer-deposition/simulation-usecase/34/figure_1","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows Raman spectra of graphene exposed to H₂ plasma at various times, up to 8 minutes.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows Raman spectra of graphene exposed to O₂ plasma at various times, up to 5 minutes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Raman Shift (cm⁻¹) |\\n|---|---|\\n| Pristine | Peaks at 1600, 2450, 2700 |\\n| 2 min | Peaks at 1350, 1600, 1650, 2450, 2700, 2950 |\\n| 3 min | Peaks at 1350, 1600, 1650, 2700, 2950 |\\n| 4 min | Peaks at 1350, 1600, 1650, 2450, 2700, 2950 |\\n| 5 min | Peaks at 1350, 1600, 1650, 2700, 2950 |\\n| 6 min | Peaks at 1350, 1600, 1650, 2700, 2950 |\\n| 8 min | Peaks at 1350, 1600, 1650, 2700, 2950 |\"},{\"panel_id\":\"b\",\"text\":\"| Sample | Raman Shift (cm⁻¹) |\\n|---|---|\\n| Pristine | Peaks at 1600, 2450, 2700 |\\n| 1 min | Peaks at 1350, 1600, 1650, 2700, 2950 |\\n| 2 min | Peaks at 1350, 1600, 1650, 2700, 2950 |\\n| 3 min | Peaks at 1350, 1600, 1650, 2700, 2950 |\\n| 5 min | Peaks at 1350, 1600, 2700, 2950 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The two peaks with a Raman shift of about 1600 and 2700 cm^-1.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The D-band at approximately 1350 cm⁻¹ and the D'-band at approximately 1650 cm⁻¹ appear after both H₂ and O₂ plasma exposure. These bands are associated with the formation of defects and/or functionalisation of the graphene structure.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The strong increase of the intensity of the D-band corresponds to the formation of sp^3 C bonds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Figure 2 shows that both H₂ and O₂ plasma treatments introduce significant structural changes in graphene, as evidenced by the appearance of the D and D′ Raman bands, which are absent or much weaker in pristine graphene. These two bands are linked to disruptions in the graphene lattice, but whether that is due to lattice defects or chemical functionalization can be determined by using the intensity ratio of the D to D′ peaks. A ratio close to 13 is associated with sp² to sp³ bond conversion caused by the attachment of functional groups, whereas a ratio near 7 suggests that the changes are primarily due to the formation of lattice defects.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":0,"width":662,"height":528},{"panel_id":"b","x":3,"y":527,"width":663,"height":521}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/34/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":669,"height":1050,"image_format":"jpeg","image_sha256":"959e720e93b40c7a328a2bedec6e8b7743335fdb3a8b39f1dedc410bbdd0a0ff","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_12.jpg","caption":"Fig. 12. Mass spectra from $m / z$ 10 to 50 showing lower masses including $\\mathrm{CO_2}$ and $\\mathrm{H_2O}$ combustion products during Hacac exposures on (a) CoO and (b) $\\mathrm{Co_3O_4}$ powders at $250^{\\circ}\\mathrm{C}$ . Mass spectra are normalized using ion signal from Hacac at $m / z$ 43.","id":"test/atomic-layer-etching/experimental-usecase/21/fig_12","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_12","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays mass spectrometry data at 250°C after the first Hacac exposure, comparing two samples labeled Co₃O₄ and CoO.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| m/z | Co3O4 | CoO |\\n| --- | --- | --- |\\n| 10 | - | - |\\n| 15 | peak at 15 | peak at 15 |\\n| 20 | peak at 18 | peak at 18 |\\n| 25 | - | - |\\n| 30 | - | - |\\n| 35 | - | - |\\n| 40 | peak at 43, 44 | peak at 43, 44 |\\n| 45 | - | - |\\n| 50 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen in the figure, the combustion of Hacac by CoO and Co3O4 powders at 250 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both the Co3O4 and CoO powders exhibit the same peaks, with a difference in peak intensity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The products of the combustion reaction demonstrate a higher peak intensity for Co3O4 than for CoO.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The ions signals for CO2 and H2O are more prominent depending on the type of powder, i.e. Co3O4 or CoO.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":1,"width":661,"height":595}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":664,"height":600,"image_format":"jpeg","image_sha256":"dd66491e3764a3a7cb4cc63ec7d2ab8bc81cdfc14e8bbb22c05a94140aab4b6f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_3.jpg","caption":"Fig. 3. CoO film thickness change versus number of CoO thermal ALE cycles using sequential Hacac and $\\mathrm{O_3}$ exposures at 250 and $200^{\\circ}C$ Etch rates are 0.43 $\\dot{\\mathrm{A}} /$ cycle at $250^{\\circ}C$ and $0.09\\mathrm{\\AA}$ /cycle at $200^{\\circ}C$ Fig. 5. XRD diffractograms for: (a) initial CoO thin film on Si prior to etching (h-CoO); and (b) CoO thin film after 300 ALE cycles using sequential Hacac and $\\mathrm{O_3}$ exposures at $250^{\\circ}C$ (c-CoO).","id":"test/atomic-layer-etching/experimental-usecase/21/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_3","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a XRD diffractograms with peaks at various 2Theta angles for the initial CoO and after ALE cycle at 250 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2 Theta (degrees) | Initial CoO | After ALE |\\n| --- | --- | --- |\\n| 30 | peak at 32°, 34°, 36° | peak at 36° |\\n| 40 | peak at 42°, 48° | peak at 42° |\\n| 50 | peak at 58° | peak at 59° |\\n| 60 | peak at 62°, 68° | peak at 62°, 64° |\\n| 70 | - | - |\\n| 80 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The (111), (200), and (220) correspond to the c-CoO, and (511) and (440) correspond to c-Co3O4.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"h-CoO and c-CoO can be observed in the initial surface.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"(111), (200) and (220) which correspond to c-CoO, and (511) and (440) which correspond to c-Co3O4.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The CoO turns into Co3O4 after the cycle.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":5,"width":658,"height":581}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":664,"height":586,"image_format":"jpeg","image_sha256":"95d8e01dabd356304c5a5d4e1d9a1f59da63cefbc808f532ff5122c5d9edfdef","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_6.jpg","caption":"Fig. 6. XRD diffractograms for: (a) CoO thin film on Si prior to etching (h-CoO); (b) CoO film after 2 doses of $\\mathrm{O_3}$ for 1 s at $250^{\\circ}\\mathrm{C}$ ; (c) CoO film after 10 doses of $\\mathrm{O_3}$ for 1 s at $250^{\\circ}\\mathrm{C}$ ; (d) CoO film after 410 doses of $\\mathrm{O_3}$ for 1 s at $250^{\\circ}\\mathrm{C}$ $\\mathrm{c - Co_3O_4}$ .","id":"test/atomic-layer-etching/experimental-usecase/21/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_6","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a XRD diffractograms with peaks at various 2Theta angles for CoO samples exposed to different doses of O3: no exposure, 2 doses, 10 doses, and 410 doses.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Intensity (arb. units) | Initial | 2 doses of O3 | 10 doses of O3 | 410 doses of O3 |\\n| --- | --- | --- | --- | --- |\\n| 20 | - | - | peak at 19° | peak at 19° |\\n| 25 | - | - | - | - |\\n| 30 | peak at 31°, 34° | peak at 31°, 34° | peak at 31°, 34° | peak at 31° |\\n| 35 | peak at 36° | peak at 36° | peak at 36° | peak at 36° |\\n| 40 | - | peak at 43° | peak at 43° | peak at 43° |\\n| 45 | peak at 47° | - | peak at 45° | peak at 45° |\\n| 50 | - | - | - | - |\\n| 55 | peak at 57° | - | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The following planes can be observed: (100), (002), (101), (102), (110), (200), (111), (220), (311), and (400).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Initially, only h-CoO can be observed on the surface. After 2 doses od ozone, both h-CoO and c-CoO can be seen.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The (100), (002), and (101) correspond to the h-CoO, while the (200) crystal plane is related to the c-CoO.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of O3 doses increases, the CoO turns into c-Co3O4.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":669,"height":772}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":673,"height":778,"image_format":"jpeg","image_sha256":"505269527de6af1cbc03f38de2ffc84507b510ab34e6f977032d47a6190a40bb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_7.jpg","caption":"Fig. 7. XPS spectra of Co 2p region for: a) initial CoO film; b) initial CoO film after two 1 s doses of $\\mathrm{O_3}$ at $250^{\\circ}\\mathrm{C}$ ; and c) initial CoO film after $300\\mathrm{CoO}$ thermal ALE cycles using sequential Hacac and $\\mathrm{O_3}$ exposures with Hacac last at $250^{\\circ}\\mathrm{C}$ . Satellite peaks, Shirley background, and fitting of Co $2\\mathrm{p}_{3 / 2}$ peak are shown by red, dark blue, and green and light blue lines, respectively. (For interpretation of the references to colour in this figure legend, the reader is referred to the web version of this article.)","id":"test/atomic-layer-etching/experimental-usecase/21/fig_7","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_7","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the XPS spectra of the initial sample and of the CoO sample after 2 doses of O3 and an ALE cycle. The Co 2p1/, Co 2p3/2 and satellite peaks are highlighted.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Initial CoO | 2 dosed of O3 | After ALE |\\n| --- | --- | --- | --- |\\n| 805 | - | - | - |\\n| 800 | - | - | - |\\n| 795 | peak at 796 | peak at 795 | peak at 797 |\\n| 790 | - | - | - |\\n| 785 | peak at 786 | - | peak at 787 |\\n| 780 | peak at 781 | peak at 781 | peak at 782 |\\n| 775 | - | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3 species.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After 2 doses of ozone, the Co 2p1/2 increases, but decreases strongly after the ALE cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The CoO sample after 2 doses of ozone (O3).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After 2 doses of ozone, the CoO film is oxidized to CO3O4.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":1,"width":662,"height":766}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":672,"height":772,"image_format":"jpeg","image_sha256":"385f647492b76f0342f49fb87138a352a9b9589803810d5181ca5729b7a19de5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_8.jpg","caption":"Fig. 8. XRD data for CoO powder: (a) initial CoO powder; and (b) initial CoO powder after 15 Hacac exposures at $250^{\\circ}\\mathrm{C}$ . c-CoO structure is observed before and after Hacac exposures.","id":"test/atomic-layer-etching/experimental-usecase/21/fig_8","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_8","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the X-ray diffraction patterns of the CoO powder, before and after Hacac exposure. Different crystal planes are highlighted.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2 Theta (degrees) | CoO after Hacac | CoO control |\\n| --- | --- | --- |\\n| 30 | peak at 32° | - |\\n| 35 | peak at 36° | peak at 36° |\\n| 40 | peak at 42° | peak at 42° |\\n| 45 | peak at 45° | - |\\n| 50 | - | - |\\n| 55 | peak at 59° | - |\\n| 60 | peak at 61° | peak at 61° |\\n| 65 | peak at 66° | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The (111), (200), and (220) crystal planes correspond to c-CoO.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The following ones can be observed: c-CoO and c-Co3O4.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The following crystal planes can be observed: (220), (111), (200), (400), (511), (220), and (440).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After the Hacac exposure, the c-CoO turns into c-Co3O4.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":3,"width":663,"height":716}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":670,"height":725,"image_format":"jpeg","image_sha256":"d39cfd1b4269492deffc587d63358bf6d8fdf415f7885c6176e15a896357c430","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_9.jpg","caption":"Fig. 9. XRD data for $\\mathrm{Co_3O_4}$ powder: (a) initial $\\mathrm{Co_3O_4}$ powder; and (b) initial $\\mathrm{Co_3O_4}$ powder after 15 Hacac exposures at $250^{\\circ}\\mathrm{C}$ . c-CoO structure develops as Hacac exposures partially convert $\\mathrm{c - Co_3O_4}$ structure to c-CoO structure.","id":"test/atomic-layer-etching/experimental-usecase/21/fig_9","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_9","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a spectra chart comparing the intensity of Co3O4 control, and the initial Co3O4 powder after 15 Hacac exposures at 250 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2 Theta (degrees) | Co3O4 after Hacac | Co3O4 control |\\n| --- | --- | --- |\\n| 30 | peak at 32°| peak at 32° |\\n| 35 | peak at 37°, 39° | peak at 37° |\\n| 40 | peak at 43° | peak at 43° |\\n| 45 | peak at 45° | - |\\n| 50 | - | - |\\n| 55 | peak at 56° | peak at 56° |\\n| 60 | peak at 60°, 62° | peak at 60° |\\n| 65 | peak at 66° | peak at 6° |\\n| 70 | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"c_CoO crystal planes: (200) and (220), and c-Co3O4 crystal planes: (220), (311), (222), (400), (422), (511) and (440).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Just c-Co3O4 can be observed.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"(200) and (220) crystal planes, which correspond to c-CoO, and (220), (311), (222), (400), (422), (511) and (440), which correspond to c-Co3O4.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After 15 Hacac exposures, part of the c-Co3O4 turns into c-CoO.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":1,"width":661,"height":706}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":667,"height":711,"image_format":"jpeg","image_sha256":"7308284fa6ddf30df4d30e00bdee104ba132e717d3e46f8de96198b1f6261867","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG13_a.jpg","caption":"Binding Energy (eV)","id":"test/atomic-layer-etching/experimental-usecase/47/FIG13_a","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG13_a","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Nb 3d XPS spectra after various ALE cycle stages.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Feature | Binding Energy Range (eV) | Peak Positions (eV) |\\n|---------------|----------------------------|----------------------|\\n| Nb 3d₅/₂ | 204 – 212 | ~207.5 |\\n| Nb 3d₃/₂ | 204 – 212 | ~210.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. The blue line corresponds to O2\\n, 2. The red line corresponds to NbCl5\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After the second NbCl5 pulse the amount of niobium on the surface is much higher than after the first pulse, but most of it is etched away by the following\\nNbCl5 pulse. Only a trace amount of niobium remains on the surface.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Nb 3d XPS spectra of a molybdenum thin film sample etched with 1–4 ALE cycles of NbCl5 and O2 at 300 °C, measured after each individual NbCl5 and O2 pulse\"}]}]","bbox":[{"panel_id":"a","x":6,"y":6,"width":278,"height":442}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG13_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG13_a.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":286,"height":450,"image_format":"jpeg","image_sha256":"b2b2f190c931c57a179b12a7048609b0d81afb8c45b43dac26142d58387cd068","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG13_b.jpg","caption":"FIG. 13. (a) Nb 3d and (b) Cl 1s XPS spectra of a molybdenum thin film sample etched with 1-4 ALE cycles of $\\mathrm{NbCl}_5$ and $\\mathrm{O}_2$ at $300^{\\circ}\\mathrm{C}$ , measured after each individual $\\mathrm{NbCl}_5$ and $\\mathrm{O}_2$ pulse.","id":"test/atomic-layer-etching/experimental-usecase/47/FIG13_b","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG13_b","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the C1 spectra from XPS characterisation for NbCl₅ and O₂ across four cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cycle | Precursor | Binding Energy Range (eV) | Peak Position (eV) |\\n|-----------|-----------|----------------------------|---------------------|\\n| 1st | NbCl₅ | 196 – 202 | ~198.5 |\\n| 1st | O₂ | 196 – 202 | ~199.5 |\\n| 2nd | NbCl₅ | 196 – 202 | ~198.5 |\\n| 2nd | O₂ | 196 – 202 | ~199.5 |\\n| 3rd | NbCl₅ | 196 – 202 | ~198.5 |\\n| 3rd | O₂ | 196 – 202 | ~199.5 |\\n| 4th | NbCl₅ | 196 – 202 | ~198.5 |\\n| 4th | O₂ | 196 – 202 | ~199.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A significant chlorine content is evident from the Cl 1s spectrum, and a trace amount of niobium is also seen after the first NbCl5 pulse. The amount of chlorine on the surface decreases with each O2 pulse, but not all of it is removed. This was also verified by repeating the O2 pulse.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Overall, the Cl content of the surface increases during the repeated ALE cycles. These changes correspond to the relative intensity changes of Mo3+ observed in the Mo 3d spectra.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Blue line corresponds to O2\\n, 2. Red line is the NbCl5 spectra\"}]}]","bbox":[{"panel_id":"a","x":35,"y":5,"width":349,"height":444}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG13_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG13_b.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":387,"height":450,"image_format":"jpeg","image_sha256":"fcb01fcb587513ff59fb18d1f51116b4b9f0e3806bc4bcfceccfe6ccbff42eb5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG14.jpg","caption":"FIG. 14. LEIS spectra of the molybdenum sample measured in vacuo after being heated and kept at $300^{\\circ}\\mathrm{C}$ for $20\\mathrm{min}$ and after different stages of the etching process for four ALE cycles. The observed peaks are marked with their respective element. Small peak seen at around $2700\\mathrm{eV}$ is due to the trace amount of Hf contamination from the reactor.","id":"test/atomic-layer-etching/experimental-usecase/47/FIG14","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG14","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure relates scattering yield with scattering energy for various cycles of etching and stopping at different pulses.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Element | Scattering Energy (eV) |\\n|---------|--------------------------|\\n| C | ~1000 |\\n| O | ~1500 |\\n| Cl | ~2000 |\\n| Nb/Mo | ~2500 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The LEIS spectrum measured with 3000 eV beam energy from the heated sample before the etching shows a distinct molybdenum peak at 2520 eV and its reionization background, as well as a peak for oxygen at 1160 eV and some carbon contamination around 820 eV\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After etching with NbCl5, the metal peak is highly attenuated, and a peak of chlorine is seen at 1930 eV. The oxygen peak is not visible after the first NbCl5 pulse, which indicates that the surface is mostly Cl terminated.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Nb and Mo are overlapping and cannot be distinguished from the spectrum due to their similar masses and the low incident ion mass\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Carbon is seen as an impurity in all the measurements. The metal peak and its reionization background intensity are significantly lower in the etched samples, compared to the surface before the etching is started. The lower intensity of the metal oxide indicates that the carbon contamination can start building up on the surface already in the beginning of the etching\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":670,"height":541}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG14.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":672,"height":547,"image_format":"jpeg","image_sha256":"acf9b37582080c0133938b6fbc74a57939708dd682b11363fff3d19264231862","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG7.jpg","caption":"FIG. 7. Grazing incidence x-ray diffractograms of $55\\mathrm{nm}$ molybdenum film as-received and after partial etching at 300, 350, and $400^{\\circ}\\mathrm{C}$ . Thicknesses of the remaining films are 39, 18, and $31\\mathrm{nm}$ after etching at 300, 350, and $400^{\\circ}\\mathrm{C}$ , respectively. Vertical bars correspond to the reference data of cubic molybdenum from ICDD 00-042-1120.","id":"test/atomic-layer-etching/experimental-usecase/47/FIG7","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG7","subset":"stacked-spectra-chart","split":"test","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows X-ray diffraction characterization for samples at different temperatures (400°C, 350°C, 300°C) and an unetched sample, along with a reference pattern.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ Position | (hkl) | 400 °C | 350 °C | 300 °C | Unetched | Reference (00-042-1120) |\\n|-------------|-------|--------|--------|--------|----------|--------------------------|\\n| ~40 | (110) | ✓ | ✓ | ✓ | ✓ | ✓ |\\n| ~50 | (200) | ✓ | ✓ | ✓ | ✓ | ✓ |\\n| ~65 | (211) | ✓ | ✓ | ✓ | ✓ | ✓ |\\n| ~75 | (220) | ✓ | ✓ | ✓ | ✓ | ✓ |\\n| ~95 | (310) | ✓ | ✓ | ✓ | ✓ | ✓ |\\n| ~115 | (222) | ✓ | ✓ | ✓ | ✓ | ✓ |\\n| ~130 | (321) | ✓ | ✓ | ✓ | ✓ | ✓ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"To evaluate the effect of the etching on the film's physical properties, samples were characterized before and after partial or complete etching using XRD.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. (110) = 40 °\\n, 2. (200) = 60 °\\n, 3. (211) = 78 °\\n, 4. (220) = 89 °\\n, 5. (310) = 102 °\\n, 6. (222) = 118 °\\n, 7. (321) = 131 °\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No change in crystallinity was seen after partial etching at 300–400 °C. This indicates that oxidation is limited to the surface layer, and the etchant does not modify the remaining film during the etching. This is in contrast to tantalum, which in our previousstudy showed considerable subsurface oxidation\"}]}]","bbox":[{"panel_id":"a","x":1,"y":3,"width":661,"height":548}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":669,"height":556,"image_format":"jpeg","image_sha256":"04204a33a3d52432044247393a9c79904cf1a59826822466b0d21e69e6ac9fef","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/stacked-spectra-chart/train/metadata.jsonl b/subsets/stacked-spectra-chart/train/metadata.jsonl index c40ded0589224d2c19d07983a5d6f5d7607a034f..0ca3793c081f4e09d81f9d82ab75b5f2828293f3 100644 --- a/subsets/stacked-spectra-chart/train/metadata.jsonl +++ b/subsets/stacked-spectra-chart/train/metadata.jsonl @@ -1,55 +1,55 @@ -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_12_fig_4.jpg","caption":"Fig. 4. FTIR difference spectra recorded versus $\\mathrm{WF}_6$ exposure during the $\\mathrm{WF}_6$ half-reaction at $425\\mathrm{K}$ . Each spectrum is referenced to the initial surface that had received a saturation $\\mathrm{Si}_2\\mathrm{H}_6$ exposure.","id":"train/atomic-layer-deposition/experimental-usecase/12/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/12/fig_4","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/J.W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":522,"height":697,"image_format":"jpeg","image_sha256":"7e5d82391087363560bb35baf95ff24d4a5a939ae07f20c13d134ee6259d15fd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":322,"y":3,"width":197,"height":692},{"panel_id":"a","x":2,"y":0,"width":329,"height":696}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows FTIR difference spectra for the tungsten hexafluoride (WF₆) half-reaction at 425 K, referenced to a surface initially saturated with disilane (Si₂H₆). In this label, negative absorbance features in the Si–H stretch region (approximately 2000–2500 cm⁻¹) indicate the removal of surface Si–H species.\"},{\"panel_id\":\"b\",\"text\":\"The FIR spectra shows positive IR absorbance in the W–F stretch region (approximately 600–720 cm⁻¹) confirms the formation of tungsten fluoride species. As the WF₆ exposure pressure increases from 10 to 250 mTorr, the exchange reaction that consumes and forms W–F bonds becomes progressively stronger.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Frequency (cm⁻¹) | Infrared Absorbance | Pressure |\\n|----------------|-----------------------|---------|\\n| 2500 | ~0.04 | 10 mTorr, 1 min |\\n| 2500 | ~0.009 | 50 mTorr, 1 min |\\n| 2500 | ~-0.03 | 250 mTorr, 1 min |\\n| 2250 | ~0.03 | 10 mTorr, 1 min |\\n| 2250 | ~0.007 | 50 mTorr, 1 min |\\n| 2250 | ~-0.03 | 250 mTorr, 1 min |\\n| 2000 | ~0.04 | 10 mTorr, 1 min |\\n| 2000 | ~0.009 | 50 mTorr, 1 min |\\n| 2000 | ~-0.03 | 250 mTorr, 1 min |\"},{\"panel_id\":\"b\",\"text\":\"| Frequency (cm⁻¹) | Infrared Absorbance | Pressure |\\n|----------------|----------------------|---------|\\n| 720 | ~0.03 | 10 mTorr, 1 min |\\n| 720 | ~-1.79 | 50 mTorr, 1 min |\\n| 720 | ~-0.05 | 250 mTorr, 1 min |\\n| 660 | ~-0.04 | 10 mTorr, 1 min |\\n| 660 | ~-0.02 | 50 mTorr, 1 min |\\n| 660 | ~-0.009 | 250 mTorr, 1 min |\\n| 600 | ~0.03 | 10 mTorr, 1 min |\\n| 600 | ~0.007 | 50 mTorr, 1 min |\\n| 600 | ~-0.03 | 250 mTorr, 1 min |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, 10 mTorr is not sufficient; the 250 mTorr route is preferable to ensure saturation despite higher waste.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The prominent W-F peak indicates that the deposited tungsten layer is heavily fluorinated. If these fluorine atoms are not fully removed in the subsequent silane half-cycle, they will incorporate as impurities. High fluorine content in tungsten films typically leads to increased resistivity and can cause adhesion failure due to chemical attack on underlying layers (like SiO2).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Exposure of the Si2H6-terminated surface to WF₆ gas.\\n\\nConsumption and removal of surface Si–H bonds, shown by negative peaks at about 2000–2500 cm⁻¹.\\n\\nFormation and deposition of W–F species on the surface, shown by positive peaks at about 600–730 cm⁻¹.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 250 mTorr spectrum shows the deepest negative dip for Si-H and the highest positive peak for W-F, indicating a more complete reaction. This suggests that the reaction is transport-limited or kinetically limited at lower pressures (10 mTorr), requiring higher driving force (pressure) to maximize surface coverage and ligand exchange.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_12_fig_6.jpg","caption":"Fig. 6. FTIR difference spectra recorded versus $\\mathrm{Si}_2\\mathrm{H}_6$ exposure during the $\\mathrm{Si}_2\\mathrm{H}_6$ half-reaction at $425~\\mathrm{K}$ . Each spectrum is referenced to the initial surface that had received a saturation $\\mathrm{WF}_6$ exposure.","id":"train/atomic-layer-deposition/experimental-usecase/12/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/12/fig_6","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/J.W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":466,"height":636,"image_format":"jpeg","image_sha256":"89cb3777d4bada0ba685d9b4835906500b4e23c8e6550ba22dd7c87658ae0489","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":289,"height":637},{"panel_id":"b","x":287,"y":0,"width":175,"height":633}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows FTIR difference spectra for the disilane (Si₂H₆) half-reaction at 425 K, referenced to a WF₆-saturated surface. In this label, positive IR absorbance in the Si–H stretch region (approximately 2100–2250 cm⁻¹) confirms the deposition of silicon hydride species. As the Si₂H₆ exposure pressure increases from 10 to 100 mTorr.\"},{\"panel_id\":\"b\",\"text\":\"The FTIR spectra shows negative IR absorbance in the W–F stretch region (approximately 600–750 cm⁻¹), the exposure pressure increases from 10 to 100 mTorr.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Frequency (cm⁻¹) | Infrared Absorbance | Pressure |\\n|----------------|----------------------|-------|\\n| 2500 | 0.03 | 10 mTorr, 1 min |\\n| 2500 | -0.01 | 40 mTorr, 1 min |\\n| 2500 | -0.07 | 100 mTorr, 2 min |\\n| 2250 | 0.04 | 10 mTorr, 1 min |\\n| 2250 | -0.008 | 40 mTorr, 1 min |\\n| 2250 | -0.07 | 100 mTorr, 2 min |\\n| 2000 | 0.04 | 10 mTorr, 1 min |\\n| 2000 | -0.01 | 40 mTorr, 1 min |\\n| 2000 | -0.07 | 100 mTorr, 2 min |\\n| 720 | 0 | 10 mTorr, 1 min |\\n| 720 | 0 | 40 mTorr, 1 min |\\n| 720 | 0 | 100 mTorr, 2 min |\\n| 660 | 0 | 10 mTorr, 1 min |\\n| 660 | 0 | 40 mTorr, 1 min |\\n| 660 | 0 | 100 mTorr, 2 min |\\n| 600 | 0 | 10 mTorr, 1 min |\\n| 600 | 0 | 40 mTorr, 1 min |\\n| 600 | 0 | 100 mTorr, 2 min |\"},{\"panel_id\":\"b\",\"text\":\"| Frequency (cm⁻¹) | Infrared Absorbance |Pressure|\\n|----------------|----------------------|------|\\n| 2500 | 0 | 10 mTorr, 1 min |\\n| 2500 | 0 | 40 mTorr, 1 min |\\n| 2500 | 0 | 100 mTorr, 2 min |\\n| 2250 | 0 | 10 mTorr, 1 min |\\n| 2250 | 0 | 40 mTorr, 1 min |\\n| 2250 | 0 | 100 mTorr, 2 min |\\n| 2000 | 0 | 10 mTorr, 1 min |\\n| 2000 | 0 | 40 mTorr, 1 min |\\n| 2000 | 0 | 100 mTorr, 2 min |\\n| 720 | 0.04 | 10 mTorr, 1 min |\\n| 720 | 0.005 | 40 mTorr, 1 min |\\n| 720 | -0.04 | 100 mTorr, 2 min |\\n| 660 | 0.02 | 10 mTorr, 1 min |\\n| 660 | -0.02 | 40 mTorr, 1 min |\\n| 660 | -0.08 | 100 mTorr, 2 min |\\n| 600 | 0.04 | 10 mTorr, 1 min |\\n| 600 | -0.004 | 40 mTorr, 1 min |\\n| 600 | -0.06 | 100 mTorr, 2 min |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Create a W–F terminated surface via a saturation exposure to WF₆.\\n\\nObtain a reference FTIR spectrum of this initial W–F/Si–H–F surface.\\n\\nThe longer 2-minute exposure at 100 mTorr likely ensures the reaction reaches saturation or a specific extent for clearer spectroscopic analysis, differentiating kinetic from pressure-limited effects observed at shorter times.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thermal Si₂H₆ route is preferable. Plasma H*, while highly reactive, can cause surface damage via ion bombardment and may have poor conformality due to short radical lifetimes and recombination. The Si₂H₆ molecule provides a gentle, thermally activated source of hydrogen via its decomposition and ligand exchange, ensuring a self-limiting, isotropic surface reaction critical for uniform coverage in deep trenches without plasma-induced defect generation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing Si₂H₆ exposure reduces the surface fluorine bound to tungsten, converting W–F* species into W–H* or W–FₓHᵧ species. This is evidenced by the decreasing positive W–F stretch peak and the evolving features in the Si–H region. The mechanism is direct exchange: Si₂H₆ reacts with surface F to form volatile SiH₃F and leaves behind Si–H and W–H species, progressively fluorinating the silane and reducing the tungsten's fluorine coordination.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the process is a robust ALD cycle with a well-defined growth per cycle (GPC). The completion of both self-limiting half-reactions is confirmed. However, the ligand-exchange mechanism incorporating silicon from Si₂H₆ suggests the deposited film will not be pure tungsten but rather a tungsten silicide (WSiₓ) or a silicon-containing tungsten alloy, which may be desirable for specific electronic properties but not for pure metallic W contacts.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_16_fig_6.jpg","caption":"FIG. 6. X-ray diffractograms of the films deposited with (a) $\\mathrm{Zr(Me_5Cp)(TEA) / O_3}$ at $250–425^{\\circ}\\mathrm{C}$ and (b) $\\mathrm{Zr(MeCp)TMEA) / H_2O}$ process at $250–375^{\\circ}\\mathrm{C}$ . Film thicknesses were in (a) $30–40\\mathrm{nm}$ and in (b) $50\\mathrm{nm}$ except at $375^{\\circ}\\mathrm{C}$ $43\\mathrm{nm}$ .","id":"train/atomic-layer-deposition/experimental-usecase/16/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/16/fig_6","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/Sanni Seppala et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":672,"height":1194,"image_format":"jpeg","image_sha256":"a0f42ab39a2795b36737c663cbcfc59aa55aca5026f741240a6065dc54f2beb6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":60,"y":2,"width":609,"height":613},{"panel_id":"b","x":54,"y":638,"width":615,"height":551}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot shows XRD pattern for films deposited with Zr(Me₅Cp)(TEA) and ozone at temperatures from 250°C to 425°C, illustrating a temperature-dependent structure evolution.\"},{\"panel_id\":\"b\",\"text\":\"The plot shows XRD pattern for films deposited with Zr(MeCp)(TMEA) and water at temperatures from 250°C to 375°C, illustrating a temperature-dependent structure evolution.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature, °C | 2θ | Intensity (arb. units) | Assignment |\\n|---|---|---|---|\\n|250|30.46| 35| - |\\n|250|50.88| 18.29| - |\\n|275|30.53| 129| t(011) |\\n|275|35.51| 57| - |\\n|275|51.03| 57| t(112)/t(020) |\\n|275|60.43| 43| - |\\n|300|30.53| 428| t(011) |\\n|300|34.66| 41| - |\\n|300|35.52| 24| t(110) |\\n|300|50.60| 93| t(112)/t(020) |\\n|300|59.57| 24| t(013) |\\n|300|60.57| 34| t(121) |\\n|350|28.11| 180| m(-111) |\\n|350|30.53| 440| t(011) |\\n|350|34.52| 91| t(002) |\\n|350|50.46| 120| t(112)/t(020) |\\n|350|59.72| 40| t(013) |\\n|350|60.28| 29| t(121) |\\n|375|28.11| 120| m(-111) |\\n|375|30.53| 248| t(011) |\\n|375|34.52| 37| t(002) |\\n|375|50.04| 59| t(112)/t(020) |\\n|375|59.15| 15| t(013) |\\n|375|60.28| 13| t(121) |\\n|400|28.11| 170| m(-111) |\\n|400|30.53| 209| t(011) |\\n|400|34.52| 24| t(002) |\\n|400|50.04| 52| t(112)/t(020) |\\n|400|59.15| 12| t(013) |\\n|400|60.28| 9| t(121) |\\n|425|28.11| 131| m(-111) |\\n|425|30.53| 131| t(011) |\\n|425|31.39| 17| m(111) |\\n|425|34.38| 9| t(002) |\\n|425|40.93| 9| m(-112) |\\n|425|49.04| 9| m |\\n|425|50.18| 52| t(112)/t(020) |\\n|425|59.00| 12| t(013) |\\n|425|60.43| 9| t(121) |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature, °C | 2θ | Intensity (arb. units) | Assignment |\\n|---|---|---|---|\\n|250|30.87| 52|- |\\n|300|30.17| 131| t(011) |\\n|300|35.33| 101| - |\\n|300|50.24| 68| t(112)/t(020) |\\n|300|59.86| 36| - |\\n|350|24.18| 21| m(011)/m( 110)|\\n|350|30.17| 302| t(011) |\\n|350|35.33| 123| t(110) |\\n|350|50.24| 107| t(112)/t(020) |\\n|350|60| 61| - |\\n|375|28.22| 23| m(-111) |\\n|375|30.45| 129| t(011) |\\n|375|34.63| 35| t(002) |\\n|375|35.47| 32| t(110) |\\n|375|42.9| 11| t(012) |\\n|375|50.52| 72| t(112)/t(020) |\\n|375|59.02| 25| t(013) |\\n|375|59.86| 28| t(121) |\\n|375|62.78| 10| t(022) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film is amorphous.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Tetragonal\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Monoclinic phase. Films deposited at 300 °C exhibit only tetragonal difraction peaks. The peaks characteristic for monoclinic phase appear only at temperatures above 350 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"t(011).\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_16_fig_7.jpg","caption":"Fig. 7. X-ray diffractograms of films with different thicknesses deposited with (a) $\\mathrm{Zr(Cp)(^tBuDAD)(O^iPr) / H_2O}$ process at $375^{\\circ}\\mathrm{C}$ and (b) $\\mathrm{Zr(Me_5Cp)(TEA) / O_3}$ process at $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/16/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/16/fig_7","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/Sanni Seppala et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":656,"height":1189,"image_format":"jpeg","image_sha256":"3829a4ac3a781207fd6445fa383838c4bfbb6ff4eafbd8e7bc25c101791d52ea","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":649,"height":570},{"panel_id":"b","x":0,"y":580,"width":652,"height":605}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot shows X-ray diffraction patterns for Zr(Cp)(ᵗBuDAD)(OⁱPr) process with water for films of different thickness (9, 22, and 70 nm).\"},{\"panel_id\":\"b\",\"text\":\"The plot shows X-ray diffraction patterns for Zr(Me₅Cp)(TEA) process with ozone for films of different thickness (12, 29, and 60 nm).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Thickness, nm | 2θ | Intensity (arb. units) | Assignment |\\n|---|---|---|---|\\n| 9| 30.00 |35| t(001)|\\n| 9| 50.42 |35| t(020)|\\n|22| 30.00 |132| t(001)|\\n|22| 35.07 |7| t(002)/t(110)|\\n| 22| 50.42 |21| t(020)|\\n| 22|60.42 |7| t(013)/t(022)|\\n|70| 30.00 |410| t(001)|\\n|70| 35.07 |67| t(002)/t(110)|\\n| 70| 43.66 |11| t(012)|\\n| 70| 50.42 |86| t(020)|\\n| 70|60.42 |35| t(013)/t(022)|\\n| 70|63.66 |13| t(121|\"},{\"panel_id\":\"b\",\"text\":\"| Thickness, nm | 2θ | Intensity (arb. units) | Assignment |\\n|---|---|---|---|\\n| 12| 30.00 |453| t(011)|\\n| 12| 34.96 |35| t(002)/t(110)/m(200)|\\n| 12| 50.6 |94| t(112)/t(020)|\\n| 12| 59.3 |33| t(013)|\\n| 12| 60.27 |33| t(121)|\\n| 29| 30.00 |458| t(011)|\\n| 29| 34.96 |38| t(002)/t(110)/m(200)|\\n| 29| 50.6 |97| t(112)/t(020)|\\n| 29| 59.3 |29| t(013)|\\n| 29| 60.27 |38| t(121)|\\n| 60| 24.19 |40| m(011)/m(110)|\\n| 60| 28.11 |48| m(-111)|\\n| 60| 30.00 |460| t(011)|\\n| 60| 31.60 |120| m(111)|\\n| 60| 33.98 |51| m(200)|\\n| 60| 34.54 |151| t(002)|\\n| 60| 35.52 |142| t(110)|\\n| 60| 50.6 |168| t(112)/t(020)|\\n| 60| 53.7 |14| m(310)|\\n| 60| 55.66 |14| m(-311)|\\n| 60| 59.16 |51| t(013)|\\n| 60| 60.13 |60| t(121)|\\n| 60| 62.93 |11| t(022)|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"70 nm, 22 nm, 9 nm\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The peak for 70 nm is taller than for 9 nm. The intensity of X-ray diffraction peaks generally increases with the volume of crystalline material. A 70 nm film contains significantly more material to diffract the X-rays than a 9 nm film, resulting in taller peaks.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At the film thickness of 29 nm.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_22_fig_4.jpg","caption":"Fig. 4. X-Ray diffractograms of LiF thin films deposited at various temperatures. Lithd and $\\mathrm{TiF_4}$ pulse lengths were $2\\mathrm{s}$ , and purge times between these pulses were $4\\mathrm{s}$ .","id":"train/atomic-layer-deposition/experimental-usecase/22/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/22/fig_4","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/Miia Mantymaki et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":650,"height":483,"image_format":"jpeg","image_sha256":"4bb82627dea30a1dfab37cdbdc0dac6f85597ca65807a1e501ba7768a659b764","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":643,"height":477}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays X-ray diffraction patterns at various temperatures (350 °C, 325 °C, 300 °C, 275 °C, and 250 °C) showing peaks corresponding to specific crystal planes ( (111), (200), and (220) ).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2Θ | 350 °C | 325 °C | 300 °C | 275 °C | 250 °C |\\n| --- | --- | --- | --- | --- | --- |\\n| 25 | - | - | - | - | - |\\n| 30 | - | - | - | - | - |\\n| 35 | - | - | - | - | - |\\n| 40 | peak at ~38° | peak at ~38° | peak at ~38° | peak at ~38° | peak at ~38° |\\n| 45 | peak at ~45° | peak at ~45° | peak at ~45° | peak at ~45° | peak at ~45° |\\n| 50 | - | - | - | - | - |\\n| 55 | - | - | - | - | - |\\n| 60 | - | - | - | - | - |\\n| 65 | peak at ~66° | peak at ~66° | peak at ~66° | peak at ~66° | peak at ~66° |\\n| 70 | - | - | - | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The grazing incidence X-ray diffraction (GIXRD) of the deposited films has been studied.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The same LiF crystal planes ( (111), (200), and (220)) can be observed in the figure, with a slightly different intensity for the (220) plane at different temperatures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the temperature increases, intensity of the (200) plane increases too. The highest intensity is observed at 350 °C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No impurity phase has been observed for any of the temperatures studied.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_25_figure_4.jpg","caption":"Figure 4. GI-XRD diffractograms of (a) TGO, and (b) ZGO films deposited on fused silica as a function of the cation ratio, $x$ .","id":"train/atomic-layer-deposition/experimental-usecase/25/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/25/figure_4","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/Adam Hultqvist et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":508,"height":706,"image_format":"jpeg","image_sha256":"71da586821e443fb9c40145c5b5dc7f9b6c07888f152da69af3b9efe968d11e1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":2,"y":366,"width":506,"height":341},{"panel_id":"a","x":0,"y":3,"width":504,"height":349}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows GI-XRD diffractograms, log intensity against 2θ for different values of x, cation ratio of Ge doped tin oxide TGO\"},{\"panel_id\":\"b\",\"text\":\"The figure shows GI-XRD diffractograms, log intensity against 2θ for different values of x, cation ratio of Ge doped Zinc oxide ZGO\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (°) | x = 1 | x = 0.30 | x = 0 |\\n|--------|-------|----------|-------|\\n| 30–35 | Broad | Broad | Broad |\\n| 40–45 | Broad | Broad | Broad |\\n| 50–55 | Broad | Broad | Broad |\\n| 60–65 | Broad | Broad | Broad |\\n| 70–75 | Broad | Broad | Broad |\"},{\"panel_id\":\"b\",\"text\":\"| 2θ (°) | x = 1 | x = 0.37 | x = 0.32 | x = 0.26 | x = 0.19 | x = 0.12 | x = 0.032 | x = 0 |\\n|--------|-------|----------|----------|----------|----------|----------|-----------|-------|\\n| ~31.8 | - | - | - | - | - | ✓ | ✓ | ✓ |\\n| ~34.4 | - | - | - | - | - | ✓ | ✓ | ✓ |\\n| ~36.2 | - | - | - | - | - | ✓ | ✓ | ✓ |\\n| ~47.5 | - | - | - | - | - | ✓ | ✓ | ✓ |\\n| ~56.6 | - | - | - | - | - | ✓ | ✓ | ✓ |\\n| ~62.8 | - | - | - | - | - | ✓ | ✓ | ✓ |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"From GI-XRD, the low-Ge content ZGO films had wurtzite ZnO peaks that gradually weakened as the amount of Ge was increased (b). Increasing the Ge content further gave X-ray amorphous films\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No. Fused silica.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"GeOy appears amorphous in grazing incidence X-ray diffraction (GI-XRD) diffractograms similar to GaOy and SnOy grown by ALD at the same temperature using metal−organic precursors with the same dimethylamine (DMA) ligand\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The GI-XRD diffractograms (a) showed an amorphous morphology for the SnOy and TGO 0.30 films. It is not surprising to see that TGO 0.3 was both resistive and X-ray amorphous, given that its growth consists of subcycles of SnOy and GeOy that also share these properties\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_6.jpg","caption":"Figure 6. XRR result (top) and AES analysis (bottom) for the films grown through (a), (c) the conventional ALD process and (b), (d) the ALD-DFM process.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_6","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":669,"height":706,"image_format":"jpeg","image_sha256":"815d915c338209f611a98f05f664453dff685ec0cc24feb53cd73d5918dfe005","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":30,"y":50,"width":304,"height":323},{"panel_id":"b","x":371,"y":53,"width":295,"height":312},{"panel_id":"c","x":2,"y":387,"width":339,"height":317},{"panel_id":"d","x":342,"y":387,"width":323,"height":317}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the intensity of a XRR signal as a function of Omega (°) for two sets of data: Experimented and Simulated, with a density of 3.268 g/cm^3.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the intensity of a XRR signal as a function of Omega (°) for two sets of data: Experimented and Simulated, with a density of 4.173 g/cm^3.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the atomic percent of various elements (C, O, Cl, Si, Ge, Se) as a function of sputtering time, for a sample grown with ordinary ALD.\"},{\"panel_id\":\"d\",\"text\":\"The figure shows the atomic percent of various elements (C, O, Cl, Si, Ge, Se) as a function of sputtering time, for a sample grown with the DFM-ALD method.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Omega (°) | Intensity (A.U.) |\\n|---|---|\\n| 0.0 | 0.6 |\\n| 0.5 | 0.5 |\\n| 1.0 | 0.4 |\\n| 1.5 | 0.4 |\\n| 2.0 | 0.4 |\"},{\"panel_id\":\"b\",\"text\":\"| Omega (°) | Intensity (A.U.) |\\n|---|---|\\n| 0.0 | 0.6 |\\n| 0.5 | 0.5 |\\n| 1.0 | 0.4 |\\n| 1.5 | 0.4 |\\n| 2.0 | 0.4 |\"},{\"panel_id\":\"c\",\"text\":\"| Sputtering Time (min) | Atomic Percent (%) C |Atomic Percent (%) O |Atomic Percent (%) Cl |Atomic Percent (%) Si |Atomic Percent (%) Ge |Atomic Percent (%) Se |\\n|---|---|---|---|---|---|---|\\n| 0 | 20|35|0|0|25|20|\\n| 1 | 10|30|0|0|26|26|\\n| 2 | 0|50|0|50|0|0|\\n| 3 | 0|50|0|50|0|0|\\n| 4 | 0|50|0|50|0|0|\\n| 5 | 0|50|0|50|0|0|\"},{\"panel_id\":\"d\",\"text\":\"| Sputtering Time (min) | Atomic Percent (%) C |Atomic Percent (%) O |Atomic Percent (%) Cl |Atomic Percent (%) Si |Atomic Percent (%) Ge |Atomic Percent (%) Se |\\n|---|---|---|---|---|---|---|\\n| 0 | 20|15|0|0|30|37|\\n| 1 | 7|7|0|0|43|43|\\n| 2 | 10|30|0|20|25|15|\\n| 3 | 0|50|0|50|0|0|\\n| 4 | 0|50|0|50|0|0|\\n| 5 | 0|50|0|50|0|0|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With the fitting of XRR data, the density, thickness, and roughness can be calculated.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"oxygen\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The oxygen can be diffusing from the SiO2 substrate or be incorporated due to exposure to ambient conditions.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems as if the Ge:Se ratio is not equal everywhere in the film. Initially there is more Se, but deeper in the film there is more Ge.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_30_figure_1.jpg","caption":"Figure 1. Grazing incidence $\\mathbf{X}$ -ray diffraction patterns of iron oxide films grown at 500 and $400^{\\circ}\\mathrm{C}$ from $\\mathrm{Fe(C_5H_5)_2}$ (top and middle panels, respectively) and at $375^{\\circ}C$ from $\\mathrm{CpFeC_5H_4CHN(CH_3)_2}$ (bottom panel), Miller indexes are given for the peaks positioned in accord with the values in powder diffraction files of magnetite. Also the cycle sequences applied and film thicknesses are given by labels. The thickness of films grown at $500^{\\circ}\\mathrm{C}$ was ca. $120–150\\mathrm{nm}$ while the exact thickness determination occurred complicated due to the enhanced roughness and development of voids between grains.","id":"train/atomic-layer-deposition/experimental-usecase/30/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/30/figure_1","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/Kaupo Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":500,"height":1166,"image_format":"jpeg","image_sha256":"0a11d67225fc3848ff0824ec653ad62b1a31ced6c6cd0d65748c84da2ee540d9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":8,"width":499,"height":377},{"panel_id":"b","x":5,"y":390,"width":494,"height":379},{"panel_id":"c","x":3,"y":775,"width":496,"height":387}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The spectra chart shows X-ray diffraction patterns of iron oxide films grown at 500 °C. Strong hematite (Fe₂O₃) peaks are observed, with additional weaker magnetite (Fe₃O₄) reflections, indicating mixed-phase crystallinity at higher growth temperature.\"},{\"panel_id\":\"b\",\"text\":\"The spectra chart shows X-ray diffraction patterns of iron oxide films grown at 400 °C. Both hematite and magnetite phases are present, with magnetite peaks becoming more pronounced compared to the higher-temperature case.\"},{\"panel_id\":\"c\",\"text\":\"The spectra chart shows X-ray diffraction patterns of iron oxide films grown at 375 °C. Magnetite-related peaks dominate the spectrum, while hematite reflections are weaker, indicating a phase shift toward magnetite at lower growth temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (degree) | Relative intensity | Phase |\\n|-------------|--------------------|---------------------|\\n| ~24.2 | High | Fe₂O₃ (hematite) |\\n| ~33.2 | High | Fe₂O₃ (hematite) |\\n| ~35.6 | Medium | Fe₃O₄ (magnetite) |\\n| ~49.5 | Medium | Fe₂O₃ (hematite) |\\n| ~54.1 | Low | Fe₃O₄ (magnetite) |\\n| ~62.5 | Low | Fe₂O₃ (hematite) |\"},{\"panel_id\":\"b\",\"text\":\"| 2θ (degree) | Relative intensity | Phase |\\n|-------------|--------------------|---------------------|\\n| ~24.2 | Medium | Fe₂O₃ (hematite) |\\n| ~30.1 | Medium | Fe₃O₄ (magnetite) |\\n| ~33.2 | High | Fe₂O₃ (hematite) |\\n| ~35.4 | High | Fe₃O₄ (magnetite) |\\n| ~43.1 | Medium | Fe₃O₄ (magnetite) |\\n| ~57.9 | Low | Fe₃O₄ (magnetite) |\"},{\"panel_id\":\"c\",\"text\":\"| 2θ (degree) | Relative intensity | Phase |\\n|-------------|--------------------|---------------------|\\n| ~30.1 | Medium | Fe₃O₄ (magnetite) |\\n| ~33.2 | Medium | Fe₂O₃ (hematite) |\\n| ~35.4 | High | Fe₃O₄ (magnetite) |\\n| ~43.1 | Medium | Fe₃O₄ (magnetite) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The grazing incident X-ray diffraction spectra are presented as a function of the temperature for the as-deposited film and the film after annealing.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 500 °C\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The formation of hematite is favored at higher growth temperatures, whereas the formation of magnetite is favored at lower temperatures.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The number of peaks decreases and so does their height. This indicates that after the FGA step there is a decrease in crystalinity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both subfigure a and b show a similar spectrum as-deposited so the assumption is yes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the growth temperature increases, the spectra evolve from a magnetite-dominated pattern at 375 °C to increasingly complex hematite-rich patterns at 500 °C. Higher temperature enhances precursor decomposition and atomic mobility, enabling transformation toward thermodynamically stable phases and the development of multiple well-defined diffraction peaks.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure compares the as-deposited films to films after forming gas annealing (FGA). In the paper, FGA is used to induce (partial) reduction of Fe2O3 toward Fe3O4 (magnetite) and thereby modify the phase composition and magnetic behavior. The GIXRD comparison in panels (b) and (c) specifically illustrates that magnetite-like reflections become more prominent after this treatment, especially for films grown at lower temperature.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A central goal of the paper is to connect phase composition to magnetic properties of ALD-grown iron oxide and Mg-doped iron oxide films. Magnetite/maghemite-type phases are typically associated with much stronger ferri/ferromagnetic responses than hematite, so promoting their formation (via lower growth temperature and/or FGA) is relevant for achieving higher saturation magnetization and useful hysteresis at practical temperatures. The paper explicitly frames the temperature/annealing dependence of phase (as seen here by GIXRD) as a prerequisite for interpreting the magnetometry trends reported later.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 500 °C, the as-deposited film shows strong hematite (Fe₂O₃) peaks with minor magnetite (Fe₃O₄) presence. After FGA, hematite peaks diminish and magnetite peaks become more prominent, indicating reduction of Fe³⁺ to Fe²⁺ under a reducing atmosphere. At 400 °C, magnetite is already significant in the as-deposited state, and FGA further enhances its crystallinity. This demonstrates that higher temperatures favor hematite formation initially, while FGA promotes magnetite through oxygen removal.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Film thickness increases with temperature: ~72 nm at 375 °C, ~246 nm at 400 °C, and ~120–150 nm at 500 °C (though roughness complicates exact measurement at 500 °C). Phase trend: lower temperature (375 °C) favors magnetite dominance even as-deposited, while higher temperature (500 °C) initially forms hematite, requiring FGA for magnetite conversion. Thus, temperature influences both growth rate and oxidation state.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Magnetite (Fe₃O₄) is a mixed-valence iron oxide with high electrical conductivity and ferrimagnetic properties, making it suitable for spintronic and magnetic storage applications. Hematite (Fe₂O₃), in contrast, is an antiferromagnetic semiconductor with low conductivity, better suited for photocatalysis. Therefore, phase control directly determines functional properties.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Magnetite exhibits strong ferrimagnetism and high saturation magnetization, enabling efficient magnetic signal detection and storage. Hematite’s antiferromagnetic nature results in negligible net magnetization, making it unsuitable for magnetic sensing. Thus, process conditions that maximize magnetite formation (lower temperature or FGA treatment) enhance performance in magnetic devices\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The iron oxide films were grown at three different temperatures\\n1.500 °C\\n2. 400 °C\\n3. 375 °C\\nAnd using two different precursors, \\na. Fe(C5H5)2\\nb. CpFeC5H4CHN(CH3)2\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The films deposited from ferrocene at 500 °C were identified to consist entirely of stable α-Fe2O3 .\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALD cycle consisted of: 1 s iron-precursor pulse, 0.5 s purge, 1 s ozone pulse, 0.5 s purge. For the top and middle panel, ferrocene was used. For the bottom panel, (dimethylamino)ferrocene was used.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The conditions differed in deposition temperature when the films were grown. These were 500 °C, 400 °C and 375 °C for the top, middle and bottom panel, respectively.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The top panel in which ferrocene was grown at 500 °C. Annealing these films did not lead to the formation of magnetite.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Hematite\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The FGA has no effect on the phase composition of the film. The diffraction peaks after FGA are nearly identical to those of the \\\"as-deposited\\\" film. The film grown at 500°C is therefore stucturally stable against reduciton at these conditions.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The diffraction angle 2θ (degrees).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"By performing a functional gas anneal. This creates magnetite peaks in the spectrum.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-FGA-treated spectra show sharper and more intense reflections.\\n-Magnetite peaks become more distinct after FGA.\\n-Background scattering is reduced in the annealed trace.\\n-Relative peak balance suggests post-deposition phase reordering.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In panel (b), the FGA trace includes labeled spinel-indexed reflections such as:\\n\\n220 at ~30.095°\\n\\n311 at ~35.423°\\n\\n400 at ~43.053°\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film is partially transformed from hematite to magnetite.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The \\\"as-deposited\\\" sample displays characteristic hematite (Fe2O3) peaks. The FGA sample is dominated by magnetite (Fe3O4). The hematite is therefore reduced to magnetite due to the hydrogen that is present in the forming gas annealing process. The reaction is 3 Fe2O3 + H2 -> 2 Fe3O4 + H2O.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the growth temperature decreases from 500 °C to 375 °C, the diffraction patterns show a shift from hematite-dominated peaks toward magnetite-dominated peaks. This shows a temperature-driven phase evolution in the iron oxide films.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Magnetite becomes dominant at 375 °C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Different iron oxide phases exhibit distinct magnetic, electrical, and chemical properties. Hematite is more thermodynamically stable and suitable for high-temperature or photocatalytic applications, while magnetite offers higher electrical conductivity and magnetic responsiveness, which are valuable for sensing, spintronic, and catalytic applications. The ability to tune the phase through deposition temperature enables targeted optimization of film performance for specific technological uses.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems that there is just one, the 220 orientation, as the 440 is the same.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Magnetite (Fe₃O₄).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 500 °C (panel a), the film is hematite-dominant in the as-deposited state and remains qualitatively hematite-dominant after FGA. At 400 °C (panel b), the as-deposited film still shows hematite reflections, but after FGA the appearance of spinel-indexed peaks indicates partial conversion toward magnetite/maghemite. At 375 °C (panel c), the film already shows predominantly magnetite-like reflections in the as-deposited state, consistent with the authors’ conclusion that lower growth temperature favors oxygen-deficient/spinel iron oxide phases.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At relatively low temperature, 400 °C, the as-deposited films were also consisting of hematite, without recognizable reflections from other phases (b). However, these films could partially be reduced to Fe3O4 after forming gas annealing. Further, at even lower temperatures, at which the films were already grown from (dimethylaminomethyl)ferrocene, the reflections in GIXRD patterns could all be attributed to the magnetite phase (cl), although the contribution from maghemite cannot be excluded. It can also be noted that, when grown at 375◦C, the films revealed a strong reflection at 35.4–35.6◦, which\\nbecame slightly shifted to lower angles after annealing, implying the reduction of hematite upon annealing.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"500.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hematite (Fe₂O₃), Magnetite (Fe₃O₄)\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hematite (α-Fe₂O₃) at 500 °C, Hematite (α-Fe₂O₃) at 400 °C, Magnetite (Fe₃O₄), with possible maghemite contribution, at 375 °C\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_30_figure_2.jpg","caption":"Figure 2. Grazing incidence $\\textrm{X}$ -ray diffraction patterns of iron oxide (top panel) and iron oxide- magnesium oxide (middle bottom panels) films grown at $425^{\\circ}C$ from $\\mathrm{Fe(C_5H_5)(C_5H_4CHN)(CH_3)_2}$ in as-deposited and annealed (FGA) states. Miller indexes, growth cycle sequences, $\\mathrm{Mg}$ to Fe atomic ratios, and PDF card numbers are given by labels.","id":"train/atomic-layer-deposition/experimental-usecase/30/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/30/figure_2","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/Kaupo Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":525,"height":1280,"image_format":"jpeg","image_sha256":"77f6dd59ef3d265651b7c6099104d8a74888816bf82e6685e92f28390d82c8a6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":555,"height":429},{"panel_id":"b","x":0,"y":429,"width":552,"height":377},{"panel_id":"c","x":3,"y":812,"width":550,"height":425}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The graph shows the X-ray diffraction (XRD) patterns of iron oxide (Fe₂O₃, hematite) films grown at 425 °C from FeC₅H₄CHN(CH₃)₂, indicating the presence of crystalline hematite and magnetite phases. Grazing incidence X-ray diffraction (GIXRD) patterns were used to characterize these iron oxide films grown under the conditions.\"},{\"panel_id\":\"b\",\"text\":\"The graph shows the X-ray diffraction (XRD) patterns of iron oxide (Fe₂O₃, hematite) films grown at 400 °C from Fe(C₅H₅)₂, indicating the presence of crystalline hematite and magnetite phases.The thickness of film grown at this temperature was 264 nm\"},{\"panel_id\":\"c\",\"text\":\"The graph shows the X-ray diffraction (XRD) patterns of iron oxide (Fe₂O₃, hematite) films grown at 375 °C from CpFeC₅H₄CHN(CH₃)₂, revealing the presence of crystalline hematite and magnetite phases. thickness of ~76 nm was measured\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (degree) | Relative intensity | Phase |\\n|-------------|--------------------|----------------------|\\n| ~24.2 | Medium | Hematite (Fe₂O₃) |\\n| ~33.2 | High | Hematite (Fe₂O₃) |\\n| ~35.6 | Medium | Magnetite (Fe₃O₄) |\\n| ~40.8 | Low | Hematite (Fe₂O₃) |\\n| ~49.5 | Medium | Hematite (Fe₂O₃) |\\n| ~54.1 | Low | Magnetite (Fe₃O₄) |\"},{\"panel_id\":\"b\",\"text\":\"| 2θ (degree) | Relative intensity | Phase |\\n|-------------|--------------------|----------------------|\\n| ~24.2 | Medium | Hematite (Fe₂O₃) |\\n| ~33.2 | High | Hematite (Fe₂O₃) |\\n| ~35.6 | High | Magnetite (Fe₃O₄) |\\n| ~43.1 | Medium | Magnetite (Fe₃O₄) |\\n| ~49.5 | Medium | Hematite (Fe₂O₃) |\\n| ~54.1 | Medium | Magnetite (Fe₃O₄) |\"},{\"panel_id\":\"c\",\"text\":\"| 2θ (degree) | Relative intensity | Phase |\\n|-------------|--------------------|----------------------|\\n| ~30.1 | Medium | Magnetite (Fe₃O₄) |\\n| ~33.2 | Medium | Hematite (Fe₂O₃) |\\n| ~35.6 | High | Magnetite (Fe₃O₄) |\\n| ~43.1 | High | Magnetite (Fe₃O₄) |\\n| ~54.1 | Medium | Magnetite (Fe₃O₄) |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Mg:Fe ratio was evaluated in order to determine the phases present in the film.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The as-deposited film\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mg:Fe = 0.02\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that magnesium oxide does not grow that good on a different substrate than on iron oxide. By first depositing iron oxide, nucleation delays can be suppressed.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"H indicates reflections indexed to hematite (α-Fe₂O₃).\\n\\nM indicates reflections indexed to magnetite (Fe₃O₄).\\n\\nThe panel explicitly lists reference PDF card identifiers for hematite and magnetite used for indexing, supporting the phase assignment.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At Mg/Fe = 0, the as-deposited film is reported as fully hematite, while after FGA it is reported to convert to magnetite, with characteristic 311, 220, 400, and 422 reflections and a small shift between hematite(110) and magnetite(311). At Mg/Fe ≈ 0.02 (MgO:Fe₂O₃ = 3:100), the as-deposited film is reported as a hematite + magnetite mixture, and after FGA it is reported to become magnetite/maghemite. At higher Mg loading (Mg/Fe ≈ 0.23, 20 MgO cycles), there are no unambiguous hematite reflections at least after annealing, because peak locations shift toward magnetite/maghemite at lower 2θ.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mg incorporation stabilizes magnetite and reduces hematite content, leading to a structure with higher electrical conductivity and stronger ferrimagnetic behavior. Additionally, Mg may introduce lattice strain or defect sites that enhance catalytic activity. Thus, structural tuning through Mg doping directly influences magnetic, electronic, and catalytic properties.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mg-doped magnetite films exhibit improved magnetite crystallinity and reduced hematite content, resulting in higher saturation magnetization and lower electrical resistivity. These properties are critical for efficient spin transport and magnetic signal detection, making Mg-doped films superior for spintronic devices and magnetic sensors.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Application of three MgO growth cycles between each 100 Fe2O3 cycles, MgO:Fe2O3 cycle ratio 3:100, resulted in Mg:Fe atomic ratio of 0.02 by EDX.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Magnetite reflections coincide with those of maghemite. The formation of solid solutions of maghemite and magnetite is highly likely. For instance, in an earlier study devoted to a gas phase deposition of iron oxide, transition from maghemite to hematite was reported, occurring between 350 and 400◦C. In addition, if the stoichiometry of the films were close to that ofmagnesioferrite MgFe2O4, then some significant peaks would also overlap with those of magnetite. For instance, locations of strong 220, 311 and 400 reflections of both MgFe2O4 (PDF card 017- 0464)57 and magnetite are identical. Distinction between maghemite, magnetite and magnesioferrite phases may be possible by XRD, but remains complicated. However, the Mg/Fe atomic ratio measured here would not allow the formation of ternary phase as the major one but rather as a contributing additive.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As-deposited sample (shows a \\\"hump\\\" in the baseline at low angles).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Forming gas annealing transforms the lightly doped film from a mixed structure into the magnetite phase. Before annealing, though the structure is dominated by hematite, the peaks of both hematite and magnetite can be observed. After the annealing, the hematite peaks dissappear compeltely. This confirms the reduction of hematite during FGA.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing Mg content shifts the diffraction patterns from hematite-dominated to magnetite-dominated. At low Mg/Fe ratios, both phases coexist, while at higher Mg/Fe ratios magnetite becomes the dominant crystalline phase.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher MgO content reduces the clear presence of hematite and favors the formation of magnetite or maghemite.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The phase composition directly affects the magnetic and electronic properties of the films. Hematite is weakly magnetic, while magnetite and maghemite are ferrimagnetic and can improve magnetic performance. Controlling the MgO doping and annealing conditions allows tailoring of these properties for applications such as magnetic storage, sensors, or catalysis.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the Mg:Fe ratio increases, the hematite phase becomes more prevalent.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems that for all three cases the final peaks are similar after the FGA, this suggests that magnesium does not have a huge impact.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The supercycle ratio is 0.23.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The transformation is much more pronounced than in the pure iron oxide case. After FGA, the hematite reflections (labeled H) largely disappear or diminish significantly, while the magnetite reflections (labeled M, such as 311, 220, 400) become dominant. This indicates that high Mg content facilitates a more complete conversion to the magnetite phase upon annealing.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Many reflections in magnetite and maghemite coincide, and the maghemite reflection at 26.103° (useful for distinguishing) is not apparent in most patterns, so XRD-only discrimination is not reliable here. In Mg-containing films, strong 220/311/400 reflections of MgFe₂O₄ can also overlap identically with magnetite, although the measured Mg/Fe ratios in these specific samples would not allow MgFe₂O₄ to be the major phase (it could still contribute). Because of this overlap, the reflections are denoted using magnetite indices as a reporting convention to emphasize differences from hematite.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Mg:Fe atomic ratio of 0.02 by EDX resulted in the formation of mixed films containing both hematite and magnetite (b)which were again turned\\ninto magnetite/maghemite upon FGA.\\n2. Mg/Fe atomic ratios 0.23 resulted in the growth of films without unambiguous reflections of hematite after annealing.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.23 and 0.38, respectively.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hematite (α-Fe₂O₃), Magnetite (Fe₃O₄), Maghemite (γ-Fe₂O₃)\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The FGA shifts the hematite phase to the magnetite phase.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"FGA promotes the partial reduction of hematite (Fe₂O₃) to magnetite (Fe₃O₄). This is evidenced by the appearance of magnetite-specific diffraction peaks, such as the (220)_M and (400)_M reflections, in the annealed sample (bottom trace) compared to the as-deposited sample (top trace).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The (110) reflection (which overlaps with the Magnetite 311 position) appears to be the most intense peak.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Magnetite offers distinct properties compared to hematite, such as higher electrical conductivity and ferrimagnetism. By using Mg doping to stabilize this phase at moderate growth temperatures (like 425 °C), these functional properties can be integrated into devices such as spintronic components or sensors more reliably than using pure iron oxide, which tends to favor hematite.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The paper states that at 425 °C the as-deposited undoped film consists completely of hematite. After FGA, the diffraction pattern is interpreted as having turned into magnetite, evidenced by the appearance of characteristic 311, 220, 400, and 422 reflections and a small but detectable shift between the nearby hematite 110 and magnetite 311 peak positions. This is consistent with hydrogen-containing anneal conditions driving partial reduction of Fe(III) oxide toward Fe(II)/Fe(III) spinel-type oxide.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"FGA significantly reduces hematite (Fe₂O₃) peaks and enhances magnetite (Fe₃O₄) peaks in all cases. For pure iron oxide films, hematite dominates in the as-deposited state but converts largely to magnetite after FGA. In Mg-doped films, the effect is more pronounced—especially at higher Mg/Fe ratios—where magnetite becomes the dominant phase after annealing. This indicates that FGA promotes reduction of Fe³⁺ to Fe²⁺ and stabilizes magnetite under a reducing atmosphere.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At low Mg/Fe ratio (0.02), hematite remains significant even after FGA, though magnetite peaks increase. At high Mg/Fe ratio (0.23), magnetite peaks (e.g., 311_M, 400_M) dominate strongly, and hematite peaks are greatly suppressed. This trend shows that Mg incorporation favors magnetite formation and improves its crystallinity, likely by altering oxygen activity and lattice strain during growth and annealing.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Hematite (alpha-Fe2O3).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3:100 (corresponding to an Mg:Fe atomic ratio of 0.02).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 425 °C, undoped Fe2O3 films initially crystallize as hematite, but after forming-gas annealing they convert completely to magnetite, exhibiting characteristic 311, 220, 400, and 422 reflections. Introducing small amounts of MgO (3 MgO cycles per 100 Fe2O3 cycles) produces mixed hematite-magnetite films that transform to magnetite or maghemite upon annealing. Further increasing Mg incorporation to 20-30 cycles shifts the diffraction peaks toward lower 2theta values corresponding to magnetite or maghemite, indicating suppression of hematite formation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film transforms from hematite to magnetite.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Before annealing: 110 (Hematite), after FGA: 311 (Magnetite).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The diffraction angle 2θ (degrees).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hematite (Fe₂O₃), Magnetite (Fe₃O₄)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_30_figure_3.jpg","caption":"Figure 3. Raman spectra of $328\\mathrm{nm}$ thick $\\mathrm{Mg}$ Fe oxide film (cycle ratio 1:100) grown at $400^{\\circ}\\mathrm{C}$ from $\\mathrm{FeCp_2}$ (top panel), $425\\mathrm{nm}$ thick $\\mathrm{Mg}$ Fe oxide film (cycle ratio 2:100, $\\mathrm{Mg / Fe} = 0.017$ grown at $375^{\\circ}\\mathrm{C}$ from $\\mathrm{CdFeC_5H_4CHN(CH_3)_2}$ (middle panel), and those of 65 and $223\\mathrm{nm}$ thick $\\mathrm{Mg / Fe}$ oxide films grown with cycle ratio 5:100 $(\\mathrm{Mg / Fe} = 0.05 - 0.06)$ at 425 and $375^{\\circ}\\mathrm{C}$ respectively (bottom panel). Patterns taken from annealed films are bold and labeled with FGA.","id":"train/atomic-layer-deposition/experimental-usecase/30/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/30/figure_3","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/Kaupo Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":556,"height":1236,"image_format":"jpeg","image_sha256":"a12e9d139f44e11d1bda31ff6a365de71d2b21d5f5b7de3813cf8114ccdeac12","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":5,"width":551,"height":426},{"panel_id":"b","x":0,"y":429,"width":552,"height":378},{"panel_id":"c","x":4,"y":804,"width":547,"height":430}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The spectra chart displays the Raman spectra of a 328 nm-thick Mg–Fe oxide film (cycle ratio 1:100) grown at 400 °C from FeCp₂, highlighting peaks at specific wavenumbers corresponding to different iron oxide phases.\"},{\"panel_id\":\"b\",\"text\":\"The spectral chart shows the Raman spectra of a 425 nm-thick Mg–Fe oxide film (cycle ratio 2:100, Mg/Fe = 0.017) grown at 375 °C from CpFeC₅H₄CHN(CH₃)₂, with distinct peaks indicating the presence of α-Fe₂O₃, γ-Fe₂O₃, and Fe₃O₄ phases\"},{\"panel_id\":\"c\",\"text\":\"The spectral chart presents Raman spectra recorded at two different temperatures for Mg–Fe oxide films with thicknesses of 65 nm and 223 nm, grown using a cycle ratio of 5:100 (Mg/Fe = 0.05–0.06) at 425 °C and 375 °C, respectively, showing signatures of Si, SiO₂, and multiple iron oxide phases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Raman shift (cm⁻¹) | Relative intensity | Assignment |\\n|--------------------|--------------------|---------------------|\\n| ~225 | Medium | α-Fe₂O₃ |\\n| ~293 | Medium | α-Fe₂O₃ |\\n| ~412 | Medium | α-Fe₂O₃ |\\n| ~498 | Low | α-Fe₂O₃ |\\n| ~538 | High | Fe₃O₄ (magnetite) |\\n| ~668 | High | Fe₃O₄ (magnetite) |\\n| ~1320 | Medium | α-Fe₂O₃ |\"},{\"panel_id\":\"b\",\"text\":\"| Raman shift (cm⁻¹) | Relative intensity | Assignment |\\n|--------------------|--------------------|---------------------|\\n| ~306 | Medium | Fe₃O₄ |\\n| ~538 | Medium | Fe₃O₄ |\\n| ~668 | High | Fe₃O₄ |\\n| ~720 | Medium | γ-Fe₂O₃ |\\n| ~1320 | Medium | α-Fe₂O₃ |\\n| ~1430 | Low | γ-Fe₂O₃ |\\n| ~1580 | Low | γ-Fe₂O₃ |\"},{\"panel_id\":\"c\",\"text\":\"| Raman shift (cm⁻¹) | Relative intensity | Assignment |\\n|--------------------|--------------------|---------------------|\\n| ~225 | Medium | α-Fe₂O₃ |\\n| ~293 | Medium | α-Fe₂O₃ |\\n| ~412 | Medium | α-Fe₂O₃ |\\n| ~514 | Medium | Si substrate |\\n| ~538 | High | Fe₃O₄ |\\n| ~668 | High | Fe₃O₄ |\\n| ~1320 | Medium | α-Fe₂O₃ |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both samples exhibit the same peaks, but with slightly different intensities.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The peaks related to Fe3O4 are best represented in the spectrum, indicating this stoichiometry is seen the most in film.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Strong Fe₃O₄ modes at 193, 306, 538, and 668 cm⁻¹ appear in (b).\\n-γ-Fe₂O₃ bands at 720, 1430, and 1580 cm⁻¹ are present only in (b).\\n-The 1320 cm⁻¹ α-Fe₂O₃ band is weaker relative to low-frequency modes in (b).\\n-Overall spectral complexity in (b) indicates incomplete phase stabilization.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Magnetite and maghemite offer complementary magnetic and electronic properties. Their coexistence, as seen in subfigure (b), may enable tunable conductivity and magnetic response while retaining partial oxidation stability, which can be beneficial for sensing or catalytic applications.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 400 °C (panel a), the Raman spectrum is dominated by hematite bands, with only weak magnetite markers (538/668 cm⁻¹). At 375 °C (panel b), the magnetite markers become strong, and maghemite-related bands are also indicated. Overall, the lower growth temperature shifts the films toward more reduced/spinel-like iron oxide signatures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Hematite (α-Fe₂O₃): ~225, 293, 412, 498, 613, 1320 cm⁻¹\\n\\nMagnetite (Fe₃O₄): ~193, 306, 538, 668 cm⁻¹\\n\\nMaghemite (γ-Fe₂O₃): ~380, 500, 720, ~1450, ~1580 cm⁻¹\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At low Mg/Fe ratio (0.017) and 375 °C, hematite dominates with minor magnetite and maghemite (γ-Fe₂O₃) peaks. At higher Mg/Fe ratios (0.05–0.06), magnetite peaks become stronger, and hematite peaks weaken significantly. Lower growth temperature (375 °C) promotes γ-Fe₂O₃ formation, while higher temperature (425 °C) favors α-Fe₂O₃ unless Mg doping is substantial. Thus, Mg doping and lower temperature both encourage mixed-phase formation and magnetite stabilization.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increased magnetite content (strong 538 and 668 cm⁻¹ peaks) improves ferrimagnetic behavior and electrical conductivity, essential for magnetic applications. The presence of γ-Fe₂O₃ and defect-rich structures at higher Mg doping enhances catalytic activity for reactions like oxygen evolution. Hematite-rich films, in contrast, have lower conductivity and weaker magnetism but better photoelectrochemical properties.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. For the hematite phase, α-Fe2O3, bands at 225, 293, 412, 498, 613, and 1320 cm−1 are typical. \\n2. For the magnetite phase, γ-Fe2O3, bands at 380, 500, 720, 1450 and 1580 cm−1 are typical.\\n3. For the magnetite phase, bands at 668, 538, 306, and 193 cm−1 are typical.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.017.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A shoulder at approximately 700 cm^-1 next to the main 668 cm^-1 magnetite band (middle panel).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Hematite (α-Fe₂O₃), magnetite (Fe₃O₄) and maghemite (γ-Fe₂O₃)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Raman shift (cm⁻¹).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"α-Fe₂O₃ ,γ-Fe₂O₃ ,Fe₃O₄\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The top panel is dominated by hematite (α-Fe₂O₃), while the bottom panel shows a mixture of hematite and magnetite (Fe₃O₄) with minor maghemite (γ-Fe₂O₃) features.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Raman spectroscopy can detect minor or overlapping phases that might not be visible in GIXRD. In these films, Raman revealed magnetite and maghemite contributions even when GIXRD indicated primarily hematite. This makes it particularly valuable for studying the effects of MgO doping, low-temperature growth, and annealing, providing a more detailed understanding of the film’s phase composition and structural changes.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The as-deposited film and the film after annealing show the same peaks i.e. same phases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the FGA and as-deposited spectra peaks related to the same stoichiometry are measured. So it does not change.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In subfigure (a), Mg incorporation modifies the local Fe–O coordination, leading to well-resolved α-Fe₂O₃ phonon modes between 225 and 613 cm⁻¹. The relative weakness of magnetite peaks suggests that Mg stabilizes hematite-like bonding environments, particularly after FGA treatment, by suppressing extensive reduction to Fe₃O₄.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"“FGA” refers to forming gas annealing applied after deposition. In this figure, spectra from annealed films are shown as bold traces and/or explicitly labeled “FGA” (clearest in panel a). The comparison is used to see how annealing changes the relative strength of hematite-, magnetite-, and maghemite-related Raman bands.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Magnetite/maghemite formation is directly relevant to the magnetic response targeted in the study, so confirming these phases matters for interpreting magnetization trends. Raman can reveal minor or mixed phases that are weak or overlapping in GIXRD, especially in the 375–400 °C regime. The Raman results are therefore used as added evidence that reduced iron oxide (magnetite-like) is present in samples where diffraction alone is ambiguous.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"FGA reduces the intensity of hematite (α-Fe₂O₃) peaks at 225, 293, 412, 498, 613, and 1320 cm⁻¹ and enhances magnetite (Fe₃O₄) peaks at 538 and 668 cm⁻¹. This indicates a phase transformation from Fe³⁺-rich hematite to mixed-valence magnetite under reducing conditions. The effect is consistent across all panels, regardless of Mg/Fe ratio, but is more pronounced in films with higher Mg content.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mg-doped magnetite-rich films combine high electrical conductivity and strong ferrimagnetism, making them ideal for spintronic devices and magnetic sensors. Additionally, Mg doping introduces lattice defects that improve catalytic activity for water splitting and CO₂ reduction. Hematite-rich films are better suited for photocatalysis but lack the magnetic and electronic performance required for advanced multifunctional devices.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"According to the Raman results, the films grown using MgO:Fe2O3 cycling ratio of 5:100 (Mg/Fe atomic ratio of ca. 0.05) at 425◦C were a mixture of hematite and magnetite, whereas the films grown at 375◦C mainly consisted of magnetite (c). In the spectra, several peaks implied the presence of the maghemite phase. This phase was not clearly detected by GIXRD. Also, in the as-deposited films grown at 400◦C, magnetite was not recognized by GIXRD, whereas Raman indicated the presence of the magnetite as an additional phase. In general the Raman results support the observations by GIXRD.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"225, 293, 412, 498, 613, 1320\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Maghemite (gamma-Fe2O3, bottom panel).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Hematite is the dominant phase, weak peaks of magnetite are also visible.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A new peak appears at 498 cm−1. Beside that, there are no visible change in the spectrum.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Peaks near 538 cm⁻¹ and 668 cm⁻¹ indicate magnetite (Fe₃O₄).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Hematite, maghemite, and magnetite.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"425 °C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems that higher temperatures are required to have any cristal like growth.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Grow thicker layers, all the other spectra of the thicker films do not show this peak.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"γ-Fe₂O₃ (maghemite).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The shoulder at 700 cm−1 for the main band at 668 cm−1 can also be attributed to magnesioferrite according to the Raman database.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film grown at 425°C exhibits peaks characteristic of hematite, whereas the film grown at 375°C is dominated by peaks attributed to magnetite. The O/Fe ratio in magnetite is approx. 1.33, which is lower than the corresponding ration in hematite (1.5). Therefore, the lower temperature of 375°C results in the formation of more oxygen-deficient film. This means that the oxidation rate at 375°C is lower, as this temperature is insuficient to fully complete the oxidation at the studied pulse times.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hematite (α-Fe₂O₃): 225, 293, 412, 498, 613, 1320 cm⁻¹, Magnetite (Fe₃O₄): 193, 306, 538, 668 cm⁻¹, Maghemite (γ-Fe₂O₃): 720, 1450, 1580 cm⁻¹, Magnesioferrite (shoulder): ~700 cm⁻¹\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_30_figure_4.jpg","caption":"Figure 4. X-ray absorption spectra, measured in total fluorescence yield mode, of $117\\mathrm{nm}$ thick non-doped film grown at $400^{\\circ}\\mathrm{C}$ from $\\mathrm{FeCp_2}$ (a), $328\\mathrm{nm}$ thick film grown with $\\mathrm{Fe}_2\\mathrm{O}_3$ MgO cycle ratio 100:1 (no $\\mathrm{Mg}$ detected) at $400^{\\circ}\\mathrm{C}$ from $\\mathrm{FeCp_2}$ (b), $72\\mathrm{nm}$ thick non-doped film grown at $375^{\\circ}\\mathrm{C}$ from $\\mathrm{CdFeC_5H_4CHN(CH_3)_2}$ (c), $425\\mathrm{nm}$ thick film grown with cycle ratio 100:2 $(\\mathrm{Mg / Fe} = 0.017)$ at $375^{\\circ}\\mathrm{C}$ from $\\mathrm{CdFeC_5H_4CHN(CH_3)_2}$ (d), and $411\\mathrm{nm}$ thick film grown with cycle ratio 100:10 $(\\mathrm{Mg / Fe} = 0.062)$ at $375^{\\circ}\\mathrm{C}$ from $\\mathrm{CdFeC_5H_4CHN(CH_3)_2}$ (e). In $\\mathrm{L}_3$ edges are depicted in upper panel, while the O K-edge spectra are shown in lower panel.","id":"train/atomic-layer-deposition/experimental-usecase/30/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/30/figure_4","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/Kaupo Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":681,"height":959,"image_format":"jpeg","image_sha256":"c37af013790dccc3bfee5221e66f095c1bc24ca086b942c9965127b1fe8847b7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":5,"width":677,"height":474},{"panel_id":"b","x":0,"y":484,"width":679,"height":475}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The O K-edge spectra show clear shape differences between as-deposited and forming-gas-annealed films. Annealing sharpens the main peak around 533–536 eV and slightly reduces intensity near the edge onset. Mg-containing films differ from non-doped ones, especially in the pre-edge region. Samples grown at 375 °C and 400 °C do not overlap fully, showing a temperature-dependent oxygen environment.\"},{\"panel_id\":\"b\",\"text\":\"The Fe L-edge spectra display strong changes in the L₃ multiplet region between ~709 and 715 eV. Increasing Mg content modifies the multiplet shape and relative peak intensities. Forming-gas annealing consistently alters the spectral fine structure, making features more defined. Differences between growth temperatures remain visible, indicating that Mg incorporation and annealing both affect the Fe electronic state.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Doping Ratio | Annealing Temp (°C) | O 1s Main Peak (~eV) | Secondary Features (~eV) | Notes |\\n|--------|--------------|---------------------|-----------------|--------------------------|-------|\\n| a) | non-doped | 400 | ~530 | shoulders at ~532, ~540 | Sharp main peak |\\n| b) | 100:1 | 400 | ~530 | shoulders at ~532, ~540 | Similar to non-doped |\\n| c) | non-doped | 375 | ~530 | shoulders at ~532, ~540 | Sharp main peak |\\n| d) | 100:2 | 375 | ~530 | shoulders at ~532, ~540 | Similar profile |\\n| e) | 100:10 | 375 | ~530 | broader peak at ~540 | More pronounced high energy feature |\"},{\"panel_id\":\"b\",\"text\":\"| Sample | Doping Ratio | Annealing Temp (°C) | Fe 2p Main Peak (~eV) | Satellite Features (~eV) | Notes |\\n|--------|--------------|---------------------|-----------------|--------------------------|--------|\\n| a) | non-doped | 400 | ~710 | multiplet structure 720-730 | Sharp L3 edge |\\n| b) | 100:1 | 400 | ~710 | multiplet structure 720-730 | Similar to non-doped |\\n| c) | non-doped | 375 | ~710 | multiplet structure 720-730 | Sharp L3 edge |\\n| d) | 100:2 | 375 | ~710 | multiplet structure 720-730 | Similar profile |\\n| e) | 100:10 | 375 | ~710 | multiplet structure 720-730 | Highest doping concentration |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Non-doped at 400 °C, both as-deposited and the other forming gas annealed samples, exhibit the same behavior.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 375 degrees celcius the bold and normal lines doe not overlap, indicating that FGA has the most effect on films grown at lower temperatures.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Photons with an energy around 710 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Increased multiplet broadening near ~709–715 eV\\n-Reduced peak asymmetry at higher Mg content\\n-More pronounced differences between as-deposited and FGA states\\n-Gradual redistribution of intensity between L₃ and L₂ regions\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Fe L₃ edge multiplet structure between ~709 and 715 eV.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It stands for Total Fluorescence Yield, which is a photon-in/photon-out detection method that typically probes the bulk of the film rather than just the surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 400 °C Fe 2p spectra (a,b) are described as hematite-like, with a more clearly split/double-peak L₃ structure. The 375 °C spectra (c–e) are described as magnetite-like, where the lower-energy L₃ feature is mainly a shoulder rather than a fully resolved peak. This separation is one of the main chemical-state indicators used in the paper for grouping samples by growth temperature.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A practical marker is an increased shoulder ~1–1.5 eV below the main L₃ (and similarly L₂) peak when Fe²⁺ is present. In this dataset, that shoulder is more prominent in the 375 °C group and becomes more emphasized after FGA, making the spectra resemble magnetite more closely. This is the specific line-shape argument cited in the discussion around Fig. 4.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The observed shifts and intensity changes suggest increased Fe²⁺ content and oxygen vacancies, leading to improved electrical conductivity and magnetic properties. Mg doping further stabilizes these reduced states, creating a structure closer to magnetite, which enhances electron transport and magnetic ordering.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mg-doped films exhibit enhanced Fe²⁺ content and oxygen vacancies, improving electron transport and magnetic ordering, which are critical for spintronic devices. Additionally, oxygen vacancies and mixed-valence states boost catalytic activity for oxygen evolution and reduction reactions, making these films multifunctional for energy and electronic applications.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The annealing (FGA) procedure enhanced and shifted the smaller L3 main peak slightly above 708.5 eV toward the main L3 peak at 710 eV, so that the overall spectral curve became more similar towhat has been observed for magnetite.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The measured O 1s XA spectra agree well with the trends indicated by the Fe 2pspectra and give additional support to the proposition that magnetite (main peak at 709 eV) is indeed present and dominant in the samples deposited at 375◦C from CpFeC5H4CHN(CH3)2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The peaks at 708.5 and 710 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Excitation of electrons from the Iron 2p core level to the unoccupied Iron 3d.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There are two distinct absorbtion regions, which are separated by ~ 13 eV from each other. The two main absorption regions arise from the spin-orbit coupling of the core hole created when an X-ray photon ejects a 2p electron. This interaction splits the core states into two distinct energy levels defined by their total angular momentum, specifically the 2p 3/2 and 2p 1/2 states. Lower energy peak at ~ 710 eV corresponds to the 2p 3/2 (L3 edge) and the higher energy peak at ~723 eV corresponds to the 2p 1/2 (L2 edge).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Forming gas annealing leads to noticeable changes in the spectral features for both the O 1s and Fe 2p edges. In several panels, peak shapes and relative intensities are modified after annealing, indicating changes in the local electronic structure and bonding environment of oxygen and iron induced by the annealing process.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Non-doped, 100:1, 100:2, 100:10, 400 °C, 375 °C, As-deposited, Forming gas annealed\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Films deposited at 400°C show a clear double-peak L₃ structure typical of hematite, while films deposited at 375°C resemble magnetite, with the L₃ main peak partly appearing as a low-energy shoulder.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hematite: Clear double-peak L₃ structure around 710–711 eV in Fe 2p spectra, Magnetite: L₃ main peak partly resolved as a low-energy shoulder around 709 eV, Mixed phases (e.g., low MgO content film): Fe L₃ resembles hematite; O K-edge resembles magnetite\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The XAS spectra allow identification of the dominant iron oxide phase in the films. Higher deposition temperatures (400°C) produce hematite-like spectra, while lower temperatures (375°C) produce magnetite-like spectra. MgO doping at low ratios (100:1) introduces a mixed behavior: Fe L₃ spectra resemble hematite, while O K-edge spectra resemble magnetite. Forming gas annealing shifts the spectral features, confirming that both temperature and MgO content influence the oxidation state and phase composition of the films. These insights are critical for tailoring the magnetic and structural properties of Mg-Fe oxide films.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Film growth temperature, Fe2O3:MgO ratio, and treatment (as deposited or forming gas annealed).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There is not a large difference in the spectra for those conditions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All peaks at 375 degrees Celsius have similar shape, indicating that doping does not have a huge effect.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To have a good overview the spectrum of magnesium could be added to get a better understanding of why shifts are present in the given spectra.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Across all samples, forming-gas annealing sharpens the main O K-edge peak near ~533–536 eV and slightly suppresses low-energy intensity near the edge onset. These changes indicate a redistribution of oxygen coordination environments rather than a rigid energy shift. The effect is strongest in Mg-containing films, suggesting annealing interacts with Mg-induced defect structures.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For each sample (a–e), two spectra are shown: as-deposited (thin line) and forming-gas annealed (FGA) (bold line). This directly isolates the effect of the anneal on the O K-edge and Fe L-edge line shapes. The figure uses the same comparison across all five samples so temperature and Mg-cycling effects can be judged consistently.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The magnetic behavior in this work is linked to whether the films are closer to hematite-like or magnetite-like chemistry. Showing both edges provides cross-checking: Fe 2p is sensitive to Fe oxidation/multiplet structure, while the O edge provides complementary information, and in most cases they trend together. The noted mismatch in the 100:1 sample (Fe-edge hematite-like, O-edge magnetite-like) flags that phase/chemistry assessment can be nontrivial from a single edge alone.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"FGA reduces the intensity of higher-energy O K-edge features and slightly shifts Fe L₃-edge peaks toward lower energy, indicating oxygen vacancy formation and partial reduction of Fe³⁺ to Fe²⁺. This process promotes magnetite-like electronic environments, especially in Mg-doped films, by creating mixed-valence states and improving electron mobility.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Non-doped films grown at 400 °C show minimal spectral changes after FGA, while Mg-doped films grown at 375 °C exhibit significant modifications, including stronger Fe²⁺ signatures and altered O K-edge features. Increasing Mg/Fe ratio from 0.017 (sample d) to 0.062 (sample e) enhances these effects, indicating that Mg doping facilitates reduction and stabilizes oxygen-deficient structures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the main features of the hematite and magnetite L3 XAS tend to overlap to a degree.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"When the films are annealed, the hematite could transition to (a larger fraction of) magnetite. Visually, in the Fe 2p region, the smaller L_3 peak at 708.5 eV shifts toward the main L_3 peak at 710 eV in that case. A similar trend is also observable for the O 1s region where the peak at 530 eV shifts toward 532 eV. Annealing has no significant effect on films grown at 400 °C (a, b), but does have a significant effect on films grown at 375 °C (c, d, e).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.062\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The peaks at 530 and 532 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The films grown at 400 °C (a, b).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Hematite spectra ( 400 °C) show a double-peak shape and magnetite spectra show a single-peak. The O 1s spectrum (1s → 2p transition) reflects the electronic structure of the oxygen atoms, but these oxygen 2p orbitals are hybridized with the iron 3d orbitals. So the shape observed in the oxygen spectrum is actually an indirect map of the energy splitting in the iron 3d, which reflects the difference in oxidation state and geometric configuration in hematite compared to magnetite.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The O 1s edge and the Fe 2p edge.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_30_figure_5.jpg","caption":"Figure 5. X-ray absorption spectra, measured in total electron yield mode, of non-doped and doped films grown at $425^{\\circ}\\mathrm{C}$ from $\\mathrm{CpFeC_5H_4CHN(CH_3)_2}$ . The legend indicates the magnesium (oxide) content in the films measured by EDX.","id":"train/atomic-layer-deposition/experimental-usecase/30/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/30/figure_5","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/Kaupo Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":531,"height":470,"image_format":"jpeg","image_sha256":"7b650aa63d1368a57a32271190a50ddcf09e61d8d506952c6a188a6dcefd6efe","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":531,"height":470}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The Fe 2p XAS spectra show a clear evolution with increasing Mg content in Fe₂O₃:MgO films grown at 425 °C. All samples exhibit the characteristic Fe L₃ and L₂ edges near ~710 and ~724 eV, respectively, but the multiplet structure progressively broadens as Mg concentration increases. Even at 0.02 at.% Mg, reduced peak definition is visible relative to the non-doped film. At higher Mg levels (0.2–0.38 at.%), multiplet attenuation and baseline elevation indicate increased local disorder and modified Fe–O coordination. The use of TEY emphasizes near-surface electronic changes induced by Mg incorporation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Photon energy (eV) | Relative intensity | Sample |\\n| ------------------ | ------------------ | ------------ |\\n| ~710 | High | non-doped |\\n| ~724 | Medium | non-doped |\\n| ~710 | High | Mg 0.02 at.% |\\n| ~724 | Medium | Mg 0.02 at.% |\\n| ~710 | Medium | Mg 0.2 at.% |\\n| ~724 | Medium | Mg 0.2 at.% |\\n| ~710 | Low | Mg 0.38 at.% |\\n| ~724 | Low | Mg 0.38 at.% |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The non-doped films, and the films with an atomic percentage of Mg of: 0.02%, 0.20%, and 0.38%.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In all cases, the peaks were observed at: 708 eV, 710 eV, 722 eV, and 723 eV.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"All of them have the same peaks.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No difference in the photon energy is observed at the peaks, nor is any shift observed.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Based on the peak positions and the lack of shifts it seems that the doping does not have an effect.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No the spectra do not show this\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The minimum number of peaks that can be identified is three. There are the two sharp peaks and the should on the right hand side.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is possible to use mathematical formulas to determine the iron and oxygen percentages in the film, based on physical constants.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With increasing Mg content, the Fe L₃ multiplet structure becomes progressively broader and less well resolved. This trend reflects increasing distortion of the local Fe–O coordination environment as Mg substitutes into the lattice. The attenuation of sharp multiplet features indicates a wider distribution of Fe–O bond lengths and local electronic environments.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Reduced intensity of Fe L₃ and L₂ multiplet peaks\\n-Increased baseline signal across 720–730 eV\\n-Broader peak envelopes indicating electronic disorder\\n-Suppressed shoulder features characteristic of crystalline Fe₂O₃\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 710–711 eV.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TEY detection probes only the near-surface region, where dopant-induced electronic changes are most pronounced. Low Mg concentrations primarily perturb local Fe–O coordination rather than bulk crystallinity, making surface-sensitive techniques essential. TEY-XAS therefore highlights subtle multiplet modifications that would be averaged out in bulk-sensitive measurements.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"x-axis: photon energy (eV), Fe 2p edge region (~700–740 eV)\\n\\ny-axis: intensity (arb. units), TEY signal\\n\\ncurves: non-doped Fe₂O₃ and Mg-doped Fe₂O₃:MgO with Mg = 0.02, 0.2, 0.38 at.% (by EDX)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The paper reports that the non-doped and 0.02 at.% Mg spectra remain hematite-like. At higher Mg levels (0.2 and ~0.4 at.%), the shoulder near ~708.5 eV decreases in intensity. This change is discussed as potentially indicating a small magnetite contribution, consistent with the diffraction-based interpretation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A key discriminator used in the paper is the relative intensity of the shoulder around ~708.5 eV on the Fe L₃ edge. Hematite-like spectra show a more pronounced split/shoulder structure in this region. With increased Mg content, the reduced shoulder intensity is interpreted as moving away from a purely hematite-like signature and toward spectra compatible with a minor magnetite component.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The work links Mg dosing to changes in phase/chemical state that matter for magnetic behavior and film properties. Fe 2p XAS provides a sensitive fingerprint for changes in Fe-oxide electronic structure as Mg is introduced. The TEY measurement adds a complementary view to diffraction by tracking how Fe 2p features evolve with doping level in the 425 °C growth series.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing Mg content modifies the Fe L₃-edge intensity and broadens the spectral features, indicating changes in Fe oxidation state and local coordination. Mg doping introduces oxygen vacancies and stabilizes mixed-valence Fe states (Fe²⁺/Fe³⁺), shifting the electronic structure toward magnetite-like characteristics.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As Mg concentration increases, the Fe L₃ peak intensity decreases and the spectral shape becomes broader, suggesting increased disorder and partial reduction of Fe³⁺ to Fe²⁺. This trend indicates that Mg doping promotes electronic restructuring and oxygen vacancy formation, with the strongest effect at 0.38 at.% Mg.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mg doping introduces oxygen vacancies and stabilizes Fe²⁺ states, improving electrical conductivity and magnetic ordering. These changes enhance ferrimagnetic behavior and electron transport, making the films more suitable for spintronic and catalytic applications.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mg-doped films exhibit improved electronic conductivity and magnetic properties due to mixed-valence Fe states and oxygen vacancies. These features are critical for spintronic devices, magnetic sensors, and catalytic processes such as oxygen evolution and CO₂ reduction, offering multifunctional performance.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Total Electron Yield (TEY) and Total Fluorescence Yield (TFY) are common detection modes in X-ray Absorption Spectroscopy (XAS), especially soft X-ray XAS (NEXAFS), where TEY measures emitted secondary electrons (surface-sensitive) and TFY measures all emitted X-ray fluorescence (bulk-sensitive).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The doped films grown at 425◦C from CpFeC5H4CHN(CH3)2 have the following concentrations, \\n1. Mg 0.02 at %\\n2. Mg 0.2 at %\\n3. Mg 0.38 at %\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The undoped Fe2O3 samples and those doped with 0.02 at.%Mg resembled the hematite spectrum, while samples with increased doping level (0.2 at.% and 0.4 at.%) showed a decreased intensity of the shoulder at 708.5 eV in the Fe 2p spectrum, possibly due to the presence of a small magnetite component.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This is a surface-sensitive measurement because the figure indicates the spectra were collected in Total Electron Yield (TEY) mode. TEY detects secondary and Auger electrons which typically have an escape depth of only < 10 nanometers due to their short mean free path in solids. Consequently, the resulting spectrum primarily characterizes the chemical state of the uppermost layers of the film rather than the bulk material.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The L3 edge (at ~ 710 eV) has higher intensity than L2, which is consistent with statistical ratio expected for those transitions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ 13 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing Mg concentration leads to a reduction in Fe 2p peak intensity and broader spectral features, indicating modification of the Fe electronic environment due to Mg incorporation.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"X-ray Absorption Spectroscopy (XAS) in total electron yield (TEY) mode.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Non-doped, 0.02 at.%, 0.2 at.%, and 0.38 at.% Mg.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both undoped films and those with 0.02 at.% Mg exhibit spectra characteristic of hematite, with the Fe 2p L3 main peak and a shoulder at 708.5 eV.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hematite: L3 main peak around 710 eV, shoulder at 708.5 eV, Magnetite: Reduced intensity of the shoulder at 708.5 eV and changes in L3 peak shape\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding the influence of Mg doping on the Fe 2p electronic structure helps to correlate doping levels with phase composition and material properties. The XAS spectra reveal how Mg incorporation modifies the balance between hematite and magnetite phases, which can impact the magnetic, electronic, and catalytic behavior of the films. Such knowledge is essential for tailoring the properties of Fe₂O₃-based functional materials for applications in sensors, catalysis, or spintronic devices.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, higher Mg doping levels reduce the intensity of the shoulder at 708.5 eV, indicating a partial shift from hematite toward a minor magnetite component.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_35_figure_3.jpg","caption":"Figure 3. Gracing incidence X-ray diffractograms of a $\\mathrm{Sb}_2\\mathrm{Te}_3$ film deposited at $60^{\\circ}\\mathrm{C}$ and a GeTe film deposited at $90^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/35/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/35/figure_3","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/Viljami Pore et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":389,"height":330,"image_format":"jpeg","image_sha256":"f22d7ba2b42493d6303db953b1967234ff692eba4a8027812248973c532ec3e3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":385,"height":325}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the intensity of X-ray diffraction peaks at various 2θ angles, indicating crystalline phases of two materials: GeTe and Sb2Te3.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ | Intensity (au) GeTe| Intensity (au) Sb2Te3|\\n|---|---|---|\\n| 20 | - | -|\\n| 27 | 021 peak | 009 peak|\\n| 28 | - |015 peak |\\n| 30 | 202 peak |-|\\n| 38 | - |1 0 10 peak |\\n| 43 | 024 peak |110 peak|\\n| 45 | 220 peak |0015 peak|\\n| 52 | Si peak |205 peak|\\n| 63 | - |1 0 19 peak|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Most peaks do not overlap, however de 220 and 110 peaks should belong to similar crystal phases.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"015\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The used substrate is silicon. This can be seen by the silicon peak in GeTe, the visibility of this peak also indicates that this film is thinner.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both materials are poly-crystalline\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_37_figure_2.jpg","caption":"Figure 2. Comparison of different $\\mathrm{MS}_2$ films on mica. In-plane $\\phi$ scans of the (1 0 1 0) reflections of $\\mathrm{SnS}_2$ (28.35° 20 $\\chi$ ), $\\mathrm{HfS}_2$ (28.6° 20 $\\chi$ ), and $\\mathrm{ZrS}_2$ (28.2° 20 $\\chi$ ) films. For clarity, only a single measurement of the (0 2 0) mica reflection is shown (19.7° 20 $\\chi$ ), although the registration was individually checked for each sample. The data has been offset vertically.","id":"train/atomic-layer-deposition/experimental-usecase/37/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/37/figure_2","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/Mattinen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":470,"height":642,"image_format":"jpeg","image_sha256":"87c5ee2c83b61406b3f6c04ff79acd75137d77ca9d6fe1118eb9f9971700f338","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":7,"width":466,"height":632}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays multiple XRD spectra of SnS₂, HfS₂, ZrS₂, films grown on mica, with intensity plotted against φ (°).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Material | Peaks (°) |\\n|--------------|-------------------------------------|\\n| (10\\\\bar{1}0) SnS₂ | ~0, ~60, ~120, ~180, ~240, ~300 |\\n| (10\\\\bar{1}0) HfS₂ | ~0, ~60, ~180, ~240, ~300 |\\n| (10\\\\bar{1}0) ZrS₂ | ~0, ~60, ~120, ~180, ~300 |\\n| (020) mica | ~0, ~90, ~180, ~270 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In terms of the out-of-plane orientation, all of these materials were strongly (0 0 0 1) oriented with FWHMs of 0.15°–0.17°\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In-plane, both 0°/60° and 30°/90° domains were observed for all of the materials, although in different amounts. For SnS2, the amount of the 30°/90°\\ndomains was the lowest, whereas for ZrS2 nearly identical amounts of the 0°/60° and 30°/90° domains were observed. The intensity ratios of the 0°/60° to 30°/90° domains obtained by integrating the peak areas were approximately 4:1, 3:1, and 1:1 for SnS2, HfS2, and ZrS2, respectively. Furthermore, ifferences in the FWHMs were observed. The 0°/60° domains of ZrS2 exhibited the smallest, although still quite large, mosaicity with a FWHM of approximately 9°compared to 14° and 19° for SnS2 and HfS2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In-plane FWHMs similar to SnS2, HfS2, and ZrS2 seen in figure have been observed in several reports on vdW epitaxy in literature. obtained an in-plane. By further optimizing the process, the in-plane disorder can be decreased.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_figure_3.jpg","caption":"Figure 3. XRD diffractograms of the samples $\\mathrm{MnO}_2 - 50\\mathrm{Li} - \\mathrm{MnO}_2$ . (a) $2\\theta_{\\chi}$ and (b) $\\theta -2\\theta$ measurements. The reflections are assigned to $\\mathrm{Li}_{1 - x}\\mathrm{Mn}_2\\mathrm{O}_4$ and $\\beta -\\mathrm{MnO}_2$ . An impurity phase $\\mathrm{Li}_{2 - x}\\mathrm{MnO}_2$ is marked with an asterisk. The insets clarify the measurement geometries. The graphs are shifted and the backgrounds have been subtracted.","id":"train/atomic-layer-deposition/experimental-usecase/38/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/38/figure_3","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":983,"height":455,"image_format":"jpeg","image_sha256":"c1e4d6856b572afcda42b4cf05644b3a6be28ba4698a35305088340cbeab7ab2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":29,"y":0,"width":446,"height":453},{"panel_id":"b","x":545,"y":0,"width":438,"height":452}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays X-ray diffraction patterns of various lithium manganese oxide compounds at different concentrations MnO2, 10cLi−MnO2, 50cLi−MnO2 , The figure displays in- plane X-ray diffraction patterns showing the transition from β-MnO₂ to Li₁₋xMn₂O₄, with β-MnO₂ peaks disappearing and Li₁₋xMn₂O₄ peaks emerging after 50 lithiation cycles.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows X-ray diffraction patterns of lithium manganese oxide compounds and their lithiated phases at same concentrations MnO2, 10cLi−MnO2. This is tshown for a less 2θ angles. 50cLi−MnO2 .The figure shows out-of-plane X-ray diffraction patterns illustrating the coexistence of the new spinel phase and a minor impurity peak, along with the evolution of the film’s (100) and (200) texture during early-stage lithiation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample (trace) | Peak assignment (as labeled) | 2θ (°) |\\n|---|---|---|\\n| MnO₂ | β-MnO₂ (011) | ~37 |\\n| MnO₂ | β-MnO₂ (020) | ~40 |\\n| MnO₂ | β-MnO₂ (002) | ~65 |\\n| MnO₂ | β-MnO₂ (031) | ~72 |\\n| MnO₂ | β-MnO₂ (022) | ~79 |\\n| 10cLi–MnO₂ | Li₁₋ₓMn₂O₄ (131) | ~37 |\\n| 10cLi–MnO₂ | Li₁₋ₓMn₂O₄ (440) | ~66 |\\n| 50cLi–MnO₂ | Li₁₋ₓMn₂O₄ (111) | ~18 |\\n| 50cLi–MnO₂ | Li₁₋ₓMn₂O₄ (131) | ~37 |\\n| 50cLi–MnO₂ | Li₁₋ₓMn₂O₄ (440) | ~66 |\"},{\"panel_id\":\"b\",\"text\":\"| Sample (trace) | Peak assignment (as labeled) | 2θ (°) |\\n|---|---|---|\\n| MnO₂ | β-MnO₂ (100) | ~22 |\\n| MnO₂ | β-MnO₂ (200) | ~41 |\\n| 10cLi–MnO₂ | β-MnO₂ (100) | ~22 |\\n| 10cLi–MnO₂ | β-MnO₂ (200) | ~41 |\\n| 10cLi–MnO₂ | * Li₂₋ₓMnO₂ impurity | ~33 |\\n| 50cLi–MnO₂ | Lithiated phase (left) | ~18 |\\n| 50cLi–MnO₂ | Lithiated phase (right) | ~35 |\\n| 50cLi–MnO₂ | Li₁₋ₓMn₂O₄ (400) | ~44.5 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"An impurity phase can be observed in the out-of-plane direction at approximately 33°.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At least 50 cycles are needed to produce this phase.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As lithium content increases, diffraction peaks associated with Li₁₋ₓMn₂O₄ become more prominent, while peaks characteristic of β-MnO₂ decrease in intensity, indicating a progressive phase transformation driven by lithiation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Confirmation of lithium intercalation into manganese oxide, Structural transformation toward spinel-type phases, Relevance for lithium-ion battery electrode performance\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The (200) reflection of the tetragonal pyrolusite MnO2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reflection at 20.3° is indexed as (100), which is forbidden for symmetry reasons in the tetragonal pyrolusite space group P42/mnm, but it may appear if the residual stress in the film deforms the structure to be slightly orthorhombic instead of tetragonal.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This reflection is most likely caused by a lithium-rich Li2−zMnO2 (ICDD PDF 38-1282) impurity phase, which has (100) reflection at 32.5° and (012) reflection at 47.6°.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The (131) peak shows the highest intensity in all the samples 2θ XRD measurements\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the beginning of the lithium intercalation, three reflections of Li1−xMn2O4 are somehow visible, the reflection at an angle 44.4° being the strongest one. The reflection is indexed as (400), and it decreases in intensity as the lithium intercalation proceeds. The other two reflections at 17.7° and 35.9° are lower in intensity in these samples. At around 32.6° in the out-of-plane θ−2θ measurements of 10cLi−MnO2, there\\nis an additional “impurity” reflection.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The impurity peak is already sharp and distinct at 10 cycles, whereas the Spinel peaks (Blue) are barely visible or absent at that stage. This indicates that the impurity phase (Li₂₋ₓMnO₂) forms as an initial surface reaction product before the bulk transformation to the Spinel phase occurs.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Highly Textured / Preferred Orientation. The MnO₂ grains exhibit a strong preferred orientation, with (100) planes parallel to the substrate (visible in the θ–2θ scan, (b), while other crystallographic planes are tilted and appear only in the 2θχ scan, panel a.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"An impurity reflection at ~32.6°, likely from a lithium-rich Li₂₋ᵤMnO₂ phase (ICDD PDF 38-1282).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Residual stress in the film deforms the tetragonal structure slightly toward orthorhombic, breaking the P4₂/mnm space group symmetry and allowing the forbidden reflection.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lithiation introduces new out-of-plane reflections associated with lithiated phases while reducing the dominance of β-MnO₂ peaks. This indicates that lithium insertion modifies the crystallographic orientation and phase composition detectable in θ–2θ geometry.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Influences ionic and electronic transport\\n-Can cause non-uniform electrochemical behavior\\n-Affects cycling stability\\n-Reflects incomplete or heterogeneous lithiation\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The (100) and (200) peakls are still present in the lithium doped film, so yes these features are still present.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"18 °20 and 36 °20.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Spinel Li₁₋ₓMn₂O₄ reflections (e.g., 111, 311, 400), Pyrolusite β-MnO₂ reflections (e.g., 011, 020, 100, 200), Impurity Li₂₋𝑧MnO₂ reflections (e.g., 100, 012), Si substrate reflection at 33.0° in θ−2θ\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Li₂₋𝑧MnO₂ impurity phase indicates lithium-rich regions formed during intercalation, which can affect the uniformity, phase composition, and electrochemical performance of the final Li₁₋ₓMn₂O₄ material.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both spectra show different planes of the samples. °2Θχ represents the in-plane and °2Θ represents the out-of-plane.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of cycles increases, lower peaks in quantity and intensity can be observed.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The XRD measurements were conducted in two geometries: in-plane 2θχ and out-of-plane θ−2θ. This dual approach allows identification of reflections in different crystallographic orientations, providing a more complete picture of the crystal structure and phase composition. Backgrounds were subtracted, and graphs were shifted to clearly visualize overlapping peaks.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Li₁₋ₓMn₂O₄.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The reflections match with Li1−xMn2O4 and β-MnO2.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Two samples consist of \\n1. 10 cycles of Li \\n2. 50 cycles of Li\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Disappearance / Consumption. The red-labeled peaks (e.g., 011, 020) decrease significantly in intensity or disappear entirely, indicating that the original rutile β-MnO₂ crystal structure is being consumed and transformed into the new lithiated spinel phase.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The appearance of the Spinel phase, evidenced by the (111) and (440) reflections, confirms the formation of a 3D interconnected network of 8a tetrahedral sites. This allows for isotropic lithium diffusion, unlike the blocked 1D channels of the original Rutile structure, enhancing the battery's power density.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The β-MnO₂ reflections persist but weaken, while Li₁₋ₓMn₂O₄ spinel reflections emerge—(111), (131), and (440) in-plane; (400) out-of-plane. At these low lithium concentrations (x < 0.5), the samples are mixtures of both phases.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Panel (a) uses in-plane 2θχ geometry probing planes parallel to the substrate; panel (b) uses out-of-plane θ-2θ geometry probing planes perpendicular to the substrate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"To improve visual separation between multiple stacked traces.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The simultaneous presence of both phases indicates an incomplete or heterogeneous transformation, where lithiation proceeds through regions of the material rather than uniformly converting the entire structure. This suggests diffusion-limited or kinetically controlled lithiation, resulting in mixed structural domains with different local properties.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The peak at 37 °20χ is the biggest peak for all three eventhough they relate to different crystal orientations, making it hard to destinguish between the three of them.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectra for pristine MnO2 and 10 lithium cycles doped MnO2 show the exact same peaks, though with different intensities. The different intensities are likely not related to the structure of the film so it is likely that there is no lithium incorporation.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_figure_5.jpg","caption":"Figure 5. XRD (a) $2\\theta_{\\chi}$ and (b) $\\theta -2\\theta$ measurements of the samples $100\\mathrm{cLi - MnO}_2 - 300\\mathrm{cLi - MnO}_2$ . The reflections are assigned to $\\mathrm{Li}_{1 - x}\\mathrm{Mn}_2\\mathrm{O}_4$ and $\\beta -\\mathrm{MnO}_2$ . An impurity phase $\\mathrm{Li}_{2 - z}\\mathrm{MnO}_2$ is marked with an asterisk. The insets clarify the measurement geometries. The graphs are shifted and the backgrounds have been subtracted.","id":"train/atomic-layer-deposition/experimental-usecase/38/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/38/figure_5","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":983,"height":458,"image_format":"jpeg","image_sha256":"f96dde812c9c0966504990cb7b86f47ef80762b59203922f7b8516c08804545e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":29,"y":0,"width":446,"height":453},{"panel_id":"b","x":545,"y":0,"width":438,"height":452}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The 2θχ XRD patterns of 100cLi–MnO₂, 200cLi–MnO₂, and 300cLi–MnO₂ show dominant reflections indexed to the lithiated spinel-like phase Li₁−xMn₂O₄, including the (111), (131), and (440) planes at ~18°, ~36–37°, and ~65–66°, respectively. With increasing cycle count, these Li₁−xMn₂O₄ peaks remain clearly resolved and comparable in relative intensity.\"},{\"panel_id\":\"b\",\"text\":\"The θ–2θ XRD patterns highlight surface-normal diffraction features of the same samples, with pronounced “lithiated phase” peaks appearing near ~18° and ~35°, along with Li₁−xMn₂O₄ (400) reflections near ~44.5°. Residual β-MnO₂ is observed through the (200) reflection around ~40–41°, most clearly in the 100cLi–MnO₂ sample.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ Position | (hkl) | 300cLi-MnOₓ | 200cLi-MnOₓ | 100cLi-MnOₓ |\\n|-------------|-------|-------------|-------------|-------------|\\n| ~18 | (111) | Yes | Yes | Yes |\\n| ~36 | (131) | Yes | Yes | Yes |\\n| ~65 | (440) | Yes | Yes | Yes |\\n| ~50 | * | Yes | Yes | Yes |\"},{\"panel_id\":\"b\",\"text\":\"| 2θ Position | Phase / (hkl) | 300cLi-MnO₂ | 200cLi-MnO₂ | 100cLi-MnO₂ |\\n|-------------|----------------------|-------------|-------------|-------------|\\n| ~22 | Lithiated phase | Yes | Yes | Yes |\\n| ~36 | Li₁₋ₓMn₂O₄ (400) | Yes | Yes | Yes |\\n| ~28 | β-MnO₂ (200) | No | No | Yes |\\n| ~32 | * | Yes | Yes | Yes |\\n| ~44 | Lithiated phase | Yes | Yes | Yes |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"°2Θχ represents the in-plane and °2Θ represent the out-of-plane (Θ-2Θ).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"From 17.7° to 17.1° and from 35.9° to 34.7°.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"LiₓMn₂O₄.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the number of lithium ALD cycles increases, so too does the Li content, which leads to changes in the crystalline phase. The reflection at around 42 °2θ, which corresponds to the beta-MnO2 phase, completely disappears when going from 100 to 200 ALD cycles even before the structure has reached stoichiometric LiMn2O4.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the concentration of lithium is increased, two reflections from the lithiated phase shift to lower 2θ\\nvalues \\n1. From 17.7° to 17.1° \\n2. From 35.9° to 34.7°\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The graphs are shifted and the backgrounds have been subtracted for ease of analysis\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 300cLi sample has a higher spinel fraction. Its Li₁₋ₓMn₂O₄ peaks (e.g., (400)) are more intense and sharper compared to the 200cLi sample, indicating greater crystallinity and phase formation.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Sharp, intense spinel peaks indicate a well-crystallized, phase-pure material. This correlates with stable lithium diffusion pathways, high structural integrity during cycling, and better overall capacity retention in a battery.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The lattice expands as more Li⁺ is incorporated, increasing d-spacing and shifting reflections to lower angles according to Bragg's law.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Not directly. The d-spacings show integer relationships suggesting multiples of a single reflection, but they don't match cubic spinel indexing. The authors propose that stress and microstrain distort the cubic structure in one dimension, breaking Fd3̄m symmetry.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Lithiated phase (left): ~18°\\n-Lithiated phase (right): ~35°\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 300cLi-MnO2 sample shows the most prominent lithiated phase.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The MnO2(200) peak is still visible for 100 lithium cycles, whereas 200 lithium cycles do not show this peak anymore indicating that there is a minimum.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Disappearance of β-MnO₂ reflections, Shift of lithiated-phase peaks to lower 2θ angles, Appearance of higher-order reflections at multiples of the fundamental peak, Indication of lattice expansion and one-dimensional distortion due to stress\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The XRD patterns show that at higher lithium concentrations (200cLi–MnO₂ and 300cLi–MnO₂), the β-MnO₂ phase disappears, indicating complete lithiation throughout the film thickness. The reflections of the lithiated phase shift systematically to lower angles, reflecting lattice expansion and possible one-dimensional distortion due to stress. Higher-order reflections further suggest the preservation of cubic symmetry with minor structural deformation. Together, these results indicate that lithium insertion significantly alters the phase composition while maintaining the overall crystal framework, though with some stress-induced distortion.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number lithium cycles increases, higher peaks can be observed.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At approximately 47°.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This can be achieved using either 100 or 300 cycles of lithium deposition, since this phase can be observed at 200 lithium cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With increasing lithium content, new diffraction peaks associated with LiₓMn₂O₄ become more prominent, while features associated with the original MnO₂ structure diminish, indicating a gradual phase transformation driven by lithium insertion.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Li intercalation confirmed, Spinel phase formation, Battery electrode relevance\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The in-plane 2θχ and out-of-plane θ−2θ measurements of the samples 100cLi−MnO2, 200cLi-MnO2, 300cLi−MnO2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They shift to lower 2θ values as lithium concentration increases.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The higher-angle reflection has half the d-spacing of the lower-angle reflection.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"in the samples 200cLi−MnO2 and 300cLi−MnO2, lithium has penetrated throughout the whole film thickness. These samples do not anymore have the β-MnO2 phase in the XRD patterns. The reflections from β-MnO2 disappear even before the structure has reached the stoichiometric LiMn2O4 composition.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The β-MnO₂ peaks diminish while the Li₁₋ₓMn₂O₄ spinel peaks grow stronger. This shows the film is progressively transforming from the initial MnO₂ phase into a lithium manganese oxide spinel structure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The impurity phase appears strongest in the 100cLi sample and diminishes thereafter. This suggests it is an intermediate phase that is consumed as lithiation proceeds toward the more stable Li₁₋ₓMn₂O₄ spinel.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The β-MnO₂ reflections disappear completely, indicating full transformation to the Li₁₋ₓMn₂O₄ spinel phase\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"An impurity reflection at ~47.4°, attributed to a lithium-rich Li₂₋ᵤMnO₂ phase.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The coexistence of Li₁−xMn₂O₄ and β-MnO₂ reflections indicates incomplete or spatially heterogeneous lithiation. This suggests that some regions of the material have transformed into the lithiated spinel-like phase, while others retain the original β-MnO₂ structure. Such phase coexistence points to limitations in lithium penetration, reaction kinetics, or structural accessibility during cycling.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Impurity phases can reduce electrochemically active material fraction.\\n-They may introduce structural instability during cycling.\\n-Phase impurities can affect capacity retention and voltage behavior.\\n-Identifying impurities helps optimize processing and cycling conditions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Six layers are passed through.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The films look quite alike, meaning there crystal structure is roughly the same, however the 200 cLi-MnO2 sample seems to have a defect around 47 °20.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_figure_7.jpg","caption":"Figure 7. Comparison of (a) Mn L-edge and (b) O K-edge XANES measured at an incident angle of $45^{\\circ}$ . (c) Mn L-edge XANES and (d) O K-edge XANES of the $\\mathrm{MnO_2}$ sample measured at incident angles of $0.5^{\\circ}$ , $1^{\\circ}$ , and $45^{\\circ}$ . (e) Mn L-edge XANES and (f) O K-edge XANES of the $300\\mathrm{cLi - MnO_2}$ sample measured at incident angles of $0.5^{\\circ}$ , $1^{\\circ}$ , and $45^{\\circ}$ . A higher incident angle probes deeper into the film as schematically shown on the right. The graphs have been rescaled.","id":"train/atomic-layer-deposition/experimental-usecase/38/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/38/figure_7","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"},{"panel_id":"d","label":"stacked spectra chart"},{"panel_id":"e","label":"stacked spectra chart"},{"panel_id":"f","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":1122,"height":934,"image_format":"jpeg","image_sha256":"ced761ede1291ded2477b96d07231f34a36228f94652b0b1e98082b70c6c54c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":19,"y":2,"width":447,"height":307},{"panel_id":"b","x":478,"y":1,"width":641,"height":307},{"panel_id":"c","x":3,"y":315,"width":360,"height":305},{"panel_id":"d","x":384,"y":312,"width":489,"height":310},{"panel_id":"e","x":18,"y":634,"width":349,"height":297},{"panel_id":"f","x":382,"y":623,"width":486,"height":308}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Mn L-edge XANES at 45° shows clear L₃ and L₂ features for MnO₂ and lithiated samples. Marker lines indicate Mn³⁺ and Mn⁴⁺ reference positions. With increasing lithiation (100c → 300c), the main L₂ peak shifts slightly toward the Mn³⁺ side. This points to partial reduction of Mn upon lithiation.\"},{\"panel_id\":\"b\",\"text\":\"O K-edge spectra at 45° show a main low-energy peak and a higher-energy shoulder. The lithiated samples track closer to the MnO₂ reference but show subtle intensity changes near the Mn³⁺ marker. These changes are consistent across 100c, 200c, and 300c samples. The overall lineshape suggests modified Mn–O hybridization after lithiation.\"},{\"panel_id\":\"c\",\"text\":\"Mn L-edge spectra of MnO₂ collected at 0.5°, 1°, and 45° show angle-dependent intensity changes. The surface-sensitive spectra (0.5°) emphasize Mn³⁺-related features more strongly than the bulk-sensitive 45° scan. Peak positions remain fixed, but relative intensities change. This indicates a more reduced Mn state near the surface.\"},{\"panel_id\":\"d\",\"text\":\"O K-edge spectra of MnO₂ also vary with incident angle. The low-energy peak becomes relatively stronger at shallow angles. This suggests altered oxygen coordination or bonding near the surface. Bulk-sensitive spectra show a more MnO₂-like response.\"},{\"panel_id\":\"e\",\"text\":\"Mn L-edge spectra of 300cLi–MnO₂ show similar angle-dependent behavior but with stronger Mn³⁺ contributions overall. Even at 45°, the Mn³⁺ marker region is more pronounced than in pristine MnO₂. This indicates that lithiation affects both surface and bulk Mn states.\"},{\"panel_id\":\"f\",\"text\":\"O K-edge spectra of 300cLi–MnO₂ show enhanced low-energy features at shallow angles. The surface-sensitive scans differ clearly from the bulk response. Compared to MnO₂, the lithiated film shows stronger surface modification of the O-related states.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Trace | Feature | Energy (eV) |\\n|---|---|---|\\n| (all traces) | Mn3+ marker line | ~641.1 |\\n| (all traces) | Mn4+ marker line | ~644.5 |\\n| MnO2 (solid black) | LII main peak (maximum) | ~654.6 |\\n| 100cLi–MnO2 (green) | LII main peak (maximum) | ~654.4 |\\n| 200cLi–MnO2 (orange) | LII main peak (maximum) | ~654.2 |\\n| 300cLi–MnO2 (yellow) | LII main peak (maximum) | ~654.0 |\\n| LiMn2O4 ref. (dashed) | LII main peak (maximum) | ~655.5 |\\n| Mn2O3 ref. (dash-dot) | LII main peak (maximum) | ~653.6 |\\n| MnO2 ref. (dotted) | LII main peak (maximum) | ~654.8 |\"},{\"panel_id\":\"b\",\"text\":\"| Trace | Feature | Energy (eV) |\\n|---|---|---|\\n| (all traces) | Mn4+ marker line (left) | ~529.4 |\\n| (all traces) | Mn3+ marker line (center) | ~531.1 |\\n| (all traces) | Mn4+ marker line (right) | ~531.9 |\\n| MnO2 (solid black) | main peak (left maximum) | ~529.5 |\\n| MnO2 (solid black) | shoulder/peak (right) | ~532.0 |\\n| 100cLi–MnO2 (green) | main peak (left maximum) | ~529.6 |\\n| 100cLi–MnO2 (green) | shoulder/peak (right) | ~532.0 |\\n| 200cLi–MnO2 (orange) | main peak (left maximum) | ~529.6 |\\n| 200cLi–MnO2 (orange) | shoulder/peak (right) | ~532.0 |\\n| 300cLi–MnO2 (yellow) | main peak (left maximum) | ~529.7 |\\n| 300cLi–MnO2 (yellow) | shoulder/peak (right) | ~532.0 |\"},{\"panel_id\":\"c\",\"text\":\"| Take-off angle | Feature | Energy (eV) |\\n|---|---|---|\\n| (all angles) | Mn3+ marker line | ~641.1 |\\n| (all angles) | Mn4+ marker line | ~644.5 |\\n| 45° | LIII main peak (maximum) | ~641.8 |\\n| 1° | LIII main peak (maximum) | ~641.8 |\\n| 0.5° | LIII main peak (maximum) | ~641.8 |\"},{\"panel_id\":\"d\",\"text\":\"| Take-off angle | Feature | Energy (eV) |\\n|---|---|---|\\n| (all angles) | Mn4+ marker line (left) | ~529.4 |\\n| (all angles) | Mn3+ marker line (center) | ~531.1 |\\n| (all angles) | Mn4+ marker line (right) | ~531.9 |\\n| 45° | main peak (left maximum) | ~529.5 |\\n| 45° | shoulder/peak (right) | ~532.0 |\\n| 1° | main peak (left maximum) | ~529.5 |\\n| 1° | shoulder/peak (right) | ~532.0 |\\n| 0.5° | main peak (left maximum) | ~529.5 |\\n| 0.5° | shoulder/peak (right) | ~532.0 |\"},{\"panel_id\":\"e\",\"text\":\"| Take-off angle | Feature | Energy (eV) |\\n|---|---|---|\\n| (all angles) | Mn3+ marker line | ~641.1 |\\n| (all angles) | Mn4+ marker line | ~644.5 |\\n| 45° | LIII main peak (maximum) | ~641.8 |\\n| 1° | LIII main peak (maximum) | ~641.8 |\\n| 0.5° | LIII main peak (maximum) | ~641.8 |\"},{\"panel_id\":\"f\",\"text\":\"| Take-off angle | Feature | Energy (eV) |\\n|---|---|---|\\n| (all angles) | Mn4+ marker line (left) | ~529.4 |\\n| (all angles) | Mn3+ marker line (center) | ~531.1 |\\n| (all angles) | Mn4+ marker line (right) | ~531.9 |\\n| 45° | main peak (left maximum) | ~529.6 |\\n| 45° | shoulder/peak (right) | ~532.0 |\\n| 1° | main peak (left maximum) | ~529.6 |\\n| 1° | shoulder/peak (right) | ~532.0 |\\n| 0.5° | main peak (left maximum) | ~529.6 |\\n| 0.5° | shoulder/peak (right) | ~532.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All the samples, even MnO2, show Mn3+ features on the surface of the film in both the Mn L-edge and in the O K-edge XANES. These features can be exhibited because of the surface contamination or oxygen vacancies that result in a reduced octahedral symmetry of oxygen atoms at the surface. The 300cLi−MnO2 sample also has an additional resonance at around 532 eV in the O K-edge XANES (f). On the basis of the peak shape, the manganese and oxygen atoms do not form an octahedron. The sample may have carbon\\ncontamination because according to the literature the K-edge of oxygen bonded to carbon has features similar to that of the surface of the 300cLi−MnO2 sample.45 However, because TOF-ERDA shows a low carbon content, the odd fine structure could be a result of oxygen vacancies on the very surface of the film.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The L₂ peak shifts slightly toward lower energy with increasing lithiation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The oxidation state of manganese changes from Mn4+ to more Mn3+.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of lithium cycles increases, the Mn4+ peak at lower energy values disappears.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Mn³⁺ features are more pronounced at low incident angles (surface-sensitive) and less intense at 45° (bulk-sensitive).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"0.5°,1°,45°\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Oxygen 2p hybridization with Mn⁴⁺ states (~529 eV) and Mn³⁺ states (~532 eV).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The measured spectrum overlaps with the literature value indicating that it is correct.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"45° , The schematic shows that higher incident angles penetrate deeper into the film, whereas grazing angles (0.5°) probe only the top surface.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Non-uniform (gradient) structure. The lithiation is not uniform through the film. The near-surface region is highly reduced and lithium-rich, dominated by Mn³⁺, whereas the deeper bulk remains relatively oxidized and lithium-poor, retaining more Mn⁴⁺. This indicates a diffusion-limited lithiation process with a concentration gradient from the surface toward the bulk.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Indicates bulk reduction, not only surface effects\\n-Suggests lithiation penetrates through the film\\n-Can influence electronic conductivity\\n-May affect long-term cycling stability\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The data shows more Mn4+ in the bulk, indicating that there is less lithium deeper in the film.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Graphs showing the peaks at lower energy values reveal more significant changes, allowing Mn+4 and Mn+3 to be identified more clearly.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Depth-dependent chemistry reveals if lithiation is uniform. A homogeneous film ensures consistent electrochemical activity across its thickness, leading to better capacity utilization and stability. A graded or surface-only lithiated film would lead to uneven stress, poor rate performance, and faster degradation during battery cycling.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mostly yes. Both surface and bulk show similar Mn³⁺/Mn⁴⁺ ratios in panels (e) and (f), though the surface has an additional O K-edge feature at ~532 eV possibly from surface oxygen vacancies.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The divergence between shallow- and high-angle spectra indicates depth-dependent modification of oxygen electronic states. Surface regions show stronger deviations from the bulk response. This reflects altered Mn–O bonding near the surface after lithiation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reference mostly overlaps with the spectrum deeper in the film, so in the bulk.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300cLi-MnO2.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The measurements show that even pure MnO₂ exhibits Mn³⁺ features at the surface, likely due to oxygen vacancies or surface contamination. For lithiated films like 300cLi–MnO₂, these Mn³⁺ features persist and an additional resonance appears in the O K-edge spectrum at ~532 eV, suggesting deviations from ideal octahedral coordination. Comparing spectra at different incident angles demonstrates the difference between surface-sensitive and bulk-sensitive measurements, highlighting that the bulk retains more regular octahedral coordination while the surface shows distortions and defects. Overall, XANES confirms that lithium insertion and surface effects modify both the electronic and local structural environment of manganese and oxygen.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both the Mn L-edge and the O K-edge XANES of the 100cLi−MnO2−300cLi−MnO2 samples have features that\\nshow the presence of Mn3+ in the film bulk (images a and b)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Different angles probe different depths—grazing angles (0.5°, 1°) are surface-sensitive, while 45° probes the bulk of the film.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Even pristine MnO₂ shows Mn³⁺ features at the surface (0.5° and 1° incidence) while the bulk (45°) is predominantly Mn⁴⁺. This surface reduction may result from oxygen vacancies or surface contamination.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Mn³⁺ peaks in Mn L-edge spectra, Additional resonance at ~532 eV in O K-edge spectra, Slight variations in pre-edge fine structure compared to references, Reduced intensity of certain Mn L-edge and O K-edge peaks at low incident angles\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The pure MnO₂ film likely shows little spectral change with angle, indicating a homogeneous Mn⁴⁺ state throughout. In contrast, the 300cLi film will show significant spectral variation with angle, revealing an inhomogeneous structure where the lithiated (Mn³⁺-rich) surface layer differs from the underlying material.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lower incident angles increase surface sensitivity because the X-ray penetration depth is reduced before significant attenuation occurs. As a result, spectra collected at 0.5° emphasize near-surface electronic states. Higher angles such as 45° probe deeper into the film and are more representative of bulk behavior.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_figure_8.jpg","caption":"Figure 8. Mn $\\mathrm{L_{III}}$ -edge XANES of the samples (solid lines) compared to the linear combinations of $\\mathrm{Mn^{4 + }}$ and $\\mathrm{Mn^{3 + }}$ references (dotted lines). The graphs have been rescaled.","id":"train/atomic-layer-deposition/experimental-usecase/38/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/38/figure_8","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":425,"height":389,"image_format":"jpeg","image_sha256":"48a5eef28924b012a042249d594960c5f4ce1a0cddb9ca33e9b5f5630b2b50c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":425,"height":389}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Mn L₃-edge XANES spectra of MnO₂ and lithiated samples (10c–300c Li–MnO₂) are compared with linear-combination fits built from Mn⁴⁺ and Mn³⁺ references. The close agreement between solid (measured) and dotted (LCF) curves indicates that the spectra are well described by mixtures of Mn³⁺ and Mn⁴⁺ states. With increasing lithiation, spectral weight near the Mn³⁺ marker (~641 eV) increases relative to the Mn⁴⁺ region (~644 eV), consistent with progressive Mn reduction. The labeled 100/0, 80/20, and 60/40 mixtures illustrate how changing Mn⁴⁺/Mn³⁺ ratios reproduce the observed evolution.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Mn⁴⁺/Mn³⁺ Ratio | Energy Range (eV) | Key Features |\\n|---------------|-----------------|--------------------|--------------|\\n| MnO₂ | 100/0 | 638–650 | Strong Mn⁴⁺ peak near 644 eV |\\n| 10cLi-MnO₂ | ~100/0 | 638–650 | Similar to MnO₂, slight broadening |\\n| 50cLi-MnO₂ | 80/20 | 638–650 | Mn³⁺ peak emerges near 642 eV |\\n| 100cLi-MnO₂ | ~60/40 | 638–650 | Mn³⁺ peak more pronounced |\\n| 200cLi-MnO₂ | Lower Mn⁴⁺ | 638–650 | Mn³⁺ dominant, Mn⁴⁺ reduced |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure displays the amount of Mn+4 and M+3 in the film bulk.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of lithium cycles increases, the amount of Mn+4 decreases, while the amount of Mn+3 increases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300cLi-MnO2.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It seems that, a higher amounts of lithium cycles, the peaks are closer in energy values.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Energies above 644 eV show the most deviation of the reference data, indicating that the model does not fit the data correctly there.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ratio of the Mn4+ and Mn3+ oxidation state are a measure for determining the lithium content.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The lowest measured ratio is 60/40.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10cLi-MnO2\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Mn³⁺ contribution increases with increasing lithiation (cycle number), indicating progressive Mn reduction.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mn³⁺ commonly introduces Jahn–Teller activity in octahedral coordination, which can elongate or distort MnO₆ units to lower electronic degeneracy. As Mn³⁺ fraction rises, the distribution of Mn–O bond lengths broadens, and local symmetry decreases, linking oxidation-state change (electronic structure) to structural distortion at the atomic scale.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Enables comparison across samples and processing conditions\\n-Provides a metric linked to redox capacity and stability\\n-Helps correlate spectroscopy with electrochemical behavior\\n-Supports model-based interpretation rather than visual inference\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"By comparing experimental L_III-edge spectra to linear combinations of Mn⁴⁺ and Mn³⁺ reference spectra and finding the best match.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"MnO₂ through 50cLi-MnO₂ show ~100% Mn⁴⁺. At 100-200 cycles, the ratio shifts to ~80/20 Mn⁴⁺/Mn³⁺. At 300 cycles (near-stoichiometric LiMn₂O₄), it reaches ~60/40, consistent with the expected 1:1 ratio for LiMn₂O₄.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Spectral features characteristic of Mn³⁺ (~641 eV) and Mn⁴⁺ (~644 eV) oxidation states.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Nearly. The 60/40 ratio is close to the expected 50/50 for Li₁.₀Mn₂O₄, consistent with the measured Li₁.₁Mn₂O₄ composition from TOF-ERDA.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Intensity shift: The ~644 eV peak (characteristic of Mn⁴⁺) decreases, while the ~641 eV peak (characteristic of Mn³⁺) increases.\\nValence: This indicates a gradual reduction in the average manganese oxidation state from approximately +4 toward +3 with progressive lithiation.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The “300cLi” sample is at higher risk. Its spectrum exhibits the strongest peak at ~641 eV, corresponding to the highest relative concentration of Mn³⁺ ions. Since Mn³⁺ induces Jahn–Teller distortion, this sample experiences greater lattice strain, increasing the likelihood of mechanical degradation and capacity fading compared to the “10cLi” sample, which contains significantly less Mn³⁺\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Drop in Mn⁴⁺: 40 percentage points. The surface Mn⁴⁺ concentration decreases from 100% to 60%, indicating that 40% of surface manganese ions have been reduced from Mn⁴⁺ to Mn³⁺.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The dotted fit closely matches the solid experimental spectrum, indicating an excellent agreement. This implies that the surface manganese chemistry can be accurately described as a binary mixture of Mn⁴⁺ and Mn³⁺ oxidation states, with no significant contributions from other oxidation states (such as Mn²⁺) or additional phases within the resolution of the XANES measurement.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The reference lines are linear combinations of Mn4+ and Mn3+\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the Mn LIII-edge XANES \\n1. Mn 4+ has energy of 644 eV\\n2. Mn 3+ has energy of 641 eV\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 10cLi−MnO2 and 50cLi−MnO2 samples resemble the reference. The 100cLi−MnO2 and 200cLi−MnO2 samples match the reference calculated\\nwith the Mn4+/Mn3+ ratio of 80%/20%. The 300cLi−MnO2 sample resembles mostly the reference where the ratio of Mn4+/Mn3+ is 60%/40%, which is in line with the expectation for this sample with the almost stoichiometric composition of Li1.1Mn2O4.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With the progressive incorporation of lithium, manganese reduces from a pure +4 oxidation state to a mixed state containing significant amounts of +3. This is supported by visual trend, where the spectral peaks for pure manganese oxide closely match the theoretical model for 100% Mn (4+). Upon cycling, the peak for Mn (4+) becomes smaller, and the peak for Mn (3+) becomes taller. The spectra of highly lithiated samples better match the theoretical model for mixed Mn (4+)/Mn(3+) compositions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"From 2p to 3d orbitals (L3-edge).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The shift of the absorption intensity from the higher energy peak (~644 eV) to the lower energy peak (~641 eV).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"+ 3.6, based on the 60/40 Mn(4+)/Mn(3+) ratio.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectra show systematic shifts and intensity changes near the absorption edge, indicating a progressive reduction in manganese oxidation state as lithium content increases, moving from Mn⁴⁺-dominant toward Mn³⁺-rich compositions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mn³⁺ and Mn⁴⁺.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Li–Mn oxidation correlation, Electronic structure changes, Redox tuning relevance.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"MnO2, 10cLi-MnO2, and 50cLi-MnO2.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"100% Mn4+ → MnO2, 10cLi-MnO2, 50cLi-MnO2, 80% Mn4+ / 20% Mn3+ → 100cLi-MnO2, 200cLi-MnO2, 60% Mn4+ / 40% Mn3+ → 300cLi-MnO2\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Mn4+/Mn3+ ratio directly affects the electrochemical performance and stability of Li-MnO2 cathodes. Samples with higher Mn4+ content are more oxidized and can provide higher voltage, while increasing Mn3+ content enhances lithium accommodation but may lead to structural distortions. By analyzing these ratios, researchers can optimize Li-MnO2 compositions to balance capacity, cycling stability, and material durability for efficient battery performance.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The Mn4+/Mn3+ ratio decreases as Li content increases, indicating a partial reduction of Mn4+ to Mn3+.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_figure_9.jpg","caption":"Figure 9. XRD diffractograms of $200\\mathrm{cLi - MnO_2 - 600}$ a $2\\theta_{\\chi}$ and (b) $\\theta -2\\theta_{j}$ and $300\\mathrm{cLi - MnO_2 - 600}$ c $2\\theta_{\\chi}$ and (d) $\\theta -2\\theta_{j}$ compared to the corresponding unannealed samples. The reflections are assigned to $\\mathrm{LiMn}_2\\mathrm{O}_4$ An impurity phase $\\mathrm{Li}_{2 - x}\\mathrm{MnO}_2$ is marked with an asterisk. The graphs are rescaled and have subtracted backgrounds.","id":"train/atomic-layer-deposition/experimental-usecase/38/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/38/figure_9","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"},{"panel_id":"d","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":1122,"height":848,"image_format":"jpeg","image_sha256":"51ab2e65fa12cdd3177191d2ff182ae4dfe9f09274e30c45b978ca0686b336a3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":0,"width":537,"height":400},{"panel_id":"b","x":585,"y":0,"width":536,"height":401},{"panel_id":"c","x":10,"y":450,"width":533,"height":397},{"panel_id":"d","x":592,"y":448,"width":529,"height":396}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The 2θχ XRD pattern compares annealed 200cLi–MnO₂–600 with the unannealed sample. After annealing, clear LiMn₂O₄ reflections appear at ~18.7°, ~36–38°, and ~64–67°. These peaks are sharper and better defined than in the unannealed trace. A weak extra peak near ~48.6° is marked with an asterisk, indicating a minor impurity.\"},{\"panel_id\":\"b\",\"text\":\"The θ–2θ scan highlights out-of-plane reflections for 200cLi–MnO₂ before and after annealing. The annealed sample shows strong LiMn₂O₄ peaks, along with labeled “lithiated phase” features near ~17° and ~35°. Residual MnO₂ peaks at ~22° and ~42° are still present. This shows that annealing promotes lithiated phase formation but does not fully remove MnO₂.\"},{\"panel_id\":\"c\",\"text\":\"The 2θχ diffractograms compare annealed and unannealed 300cLi–MnO₂. In the annealed sample, LiMn₂O₄ peaks at (111), (131)/(222), (440), and (351) are clearly visible. These reflections are stronger and cleaner than in the unannealed pattern. This indicates improved crystallinity of the lithiated phase after annealing.\"},{\"panel_id\":\"d\",\"text\":\"The θ–2θ patterns for 300cLi–MnO₂ show strong lithiated-phase peaks after annealing. LiMn₂O₄ reflections near ~18.7° and ~35.6° dominate the annealed trace. A small impurity peak, marked by an asterisk near ~33°, is also visible. The unannealed sample shows weaker and broader peaks, pointing to poorer structural order.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample (trace) | Peak / feature label | 2θ (°) |\\n|---|---|---|\\n| 200cLi–MnO2–600 (top) | LiMn2O4 (111) | ~18.7 |\\n| 200cLi–MnO2–600 (top) | LiMn2O4 (131) | ~36.6 |\\n| 200cLi–MnO2–600 (top) | LiMn2O4 (222) | ~38.4 |\\n| 200cLi–MnO2–600 (top) | LiMn2O4 (440) | ~64.2 |\\n| 200cLi–MnO2–600 (top) | LiMn2O4 (351) | ~66.7 |\\n| 200cLi–MnO2 (bottom) | * (unassigned peak) | ~48.6 |\\n| 200cLi–MnO2 (bottom) | dominant peak (same region as ~36–39°) | ~38.0 |\\n| 200cLi–MnO2 (bottom) | higher-angle peak (same region as ~64–67°) | ~66.7 |\"},{\"panel_id\":\"b\",\"text\":\"| Sample (trace) | Peak / feature label | 2θ (°) |\\n|---|---|---|\\n| 200cLi–MnO2–600 (top) | Lithiated phase (left) | ~17.1 |\\n| 200cLi–MnO2–600 (top) | LiMn2O4 (111) | ~18.7 |\\n| 200cLi–MnO2–600 (top) | MnO2 (100) | ~22.3 |\\n| 200cLi–MnO2–600 (top) | strong unlabeled peak | ~32.9 |\\n| 200cLi–MnO2–600 (top) | Lithiated phase (right) | ~34.6 |\\n| 200cLi–MnO2–600 (top) | LiMn2O4 (311) | ~35.6 |\\n| 200cLi–MnO2–600 (top) | MnO2 (200) | ~42.2 |\\n| 200cLi–MnO2 (bottom) | LiMn2O4 (111) peak | ~18.7 |\\n| 200cLi–MnO2 (bottom) | strong peak (same region as ~35–36°) | ~35.6 |\"},{\"panel_id\":\"c\",\"text\":\"| Sample (trace) | Peak / feature label | 2θ (°) |\\n|---|---|---|\\n| 300cLi–MnO2–600 (top) | LiMn2O4 (111) | ~18.7 |\\n| 300cLi–MnO2–600 (top) | LiMn2O4 (131) | ~36.6 |\\n| 300cLi–MnO2–600 (top) | LiMn2O4 (222) | ~38.4 |\\n| 300cLi–MnO2–600 (top) | LiMn2O4 (440) | ~64.2 |\\n| 300cLi–MnO2–600 (top) | LiMn2O4 (351) | ~66.7 |\\n| 300cLi–MnO2 (bottom) | dominant peak (same region as ~36–39°) | ~38.0 |\\n| 300cLi–MnO2 (bottom) | higher-angle peak (same region as ~64–67°) | ~66.7 |\"},{\"panel_id\":\"d\",\"text\":\"| Sample (trace) | Peak / feature label | 2θ (°) |\\n|---|---|---|\\n| 300cLi–MnO2–600 (top) | Lithiated phase (left) | ~17.1 |\\n| 300cLi–MnO2–600 (top) | LiMn2O4 (111) | ~18.7 |\\n| 300cLi–MnO2–600 (top) | * (unassigned peak) | ~32.6 |\\n| 300cLi–MnO2–600 (top) | strong unlabeled peak | ~32.9 |\\n| 300cLi–MnO2–600 (top) | Lithiated phase (right) | ~34.6 |\\n| 300cLi–MnO2–600 (top) | LiMn2O4 (311) | ~35.6 |\\n| 300cLi–MnO2 (bottom) | LiMn2O4 (111) peak | ~18.7 |\\n| 300cLi–MnO2 (bottom) | strong peak (same region as ~35–36°) | ~35.6 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The out-of-plane (°2θ) have been analyzed.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200 cycles without annealing treatment.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300cLi−MnO2-600.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The beta-MnO2 phase.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After annealing at 600 °C for 10 min, the diffraction patterns of 200cLi−MnO2-600 and 300cLi−MnO2- 600 match better with the stoichiometric cubic LiMn2O4 reference (ICDD PDF 35-0782) than with the lithium deficient Li1−xMn2O4 reference\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Peak near ~17°\\n-Peak near ~35°\\n-Strengthened LiMn₂O₄ (111) reflection\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that lithium diffuses to other regions upon annealing leading to more MnO2 crystals.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The annealed sample shows the impurity phase. The peaks related to the lithiated phase are also not present.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200cLi-MnO2 approximately at 40°, and 300cLi-MnO2 (annealed at 600 °C) approximately at 33°.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"XRD analysis reveals the crystal structure and phase purity of Li-MnO2 films. Annealing at 600 °C helps achieve a stoichiometric LiMn2O4 phase with well-defined reflections, which correlates with better lithium intercalation and electrochemical stability. Identifying residual MnO2 or impurity phases like Li2−zMnO2 allows researchers to optimize annealing conditions, ensuring improved capacity, cycling stability, and structural integrity in battery cathodes.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A peak at 32.6°, attributed to an impurity phase Li(2−z)MnO₂.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"(111) and (311).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the 200cLi−MnO2-600 sample, the reflections of the MnO2 phase become visible again after annealing (Image b). Similar behavior was not noticed for the 300cLi−MnO2-600 sample. It had, however, an additional reflection at 32.6° (marked with an asterisk in d), which is thought to be caused by the earlier discussed impurity phase Li2−zMnO2\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Eliminating impurities and achieving high crystallinity ensures uniform electrochemical properties, stable lithium-ion pathways, and minimal parasitic reactions. This directly translates to higher capacity, better rate capability, and longer cycle life in a lithium-ion battery.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"An impurity reflection from the Li₂₋ᵤMnO₂ phase, identified by comparison with standard XRD reference patterns\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Dominant LiMn₂O₄ reflections indicate improved phase ordering along the surface-normal direction. This suggests that annealing enhances alignment or coherence of the lithiated phase. Such ordering is consistent with higher structural quality.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The LiMn2O4 (311) phase.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"(111), (131), (222), (440), (351) → Correspond to cubic LiMn2O4 structure, MnO2 reappeared reflections → Indicate residual or reformed MnO2 phase after annealing\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The spinel LiMn₂O₄ phase.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"β-MnO₂ to LiMn₂O₄ transformation, New diffraction peaks, Reduced β-MnO₂ reflections.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. LiMn2O4 (111) \\n2. LiMn2O4 (131)\\n3. LiMn2O4 (222)\\n4. LiMn2O4 (440)\\n5. LiMn2O4 (351)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 200cLi sample has insufficient lithium for complete conversion; annealing causes Li redistribution, leaving some regions lithium-deficient and reverting to MnO₂.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They become stronger and more clearly resolved.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectra do not show any peaks labeled with an asterix, so there are no defects.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Annealing induces the transformation of β-MnO₂ to the spinel LiMn₂O₄ phase, as indicated by the emergence of new diffraction peaks and the reduction of β-MnO₂ reflections. This demonstrates increased crystallinity and lithium incorporation upon heat treatment.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 18.5°.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Annealing significantly sharpens and intensifies the LiMn₂O₄ spinel peaks while reducing the broad, disordered background. This indicates enhanced crystallinity and improved long-range atomic order within the films.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 300cLi sample shows more dramatic peak sharpening. This is likely because it starts closer to the stoichiometric LiMn₂O₄ composition, allowing annealing to more efficiently drive the crystallization of the phase-pure spinel structure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The impurity phase (Li₂₋ₓMnO₂) is present in the unannealed samples but is eliminated after annealing. This indicates it is a metastable intermediate that decomposes or transforms into the more thermodynamically stable LiMn₂O₄ spinel phase upon heating.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Annealing enables lithium to overcome diffusion barriers, completing the transformation to stoichiometric cubic LiMn₂O₄ with sharper, better-indexed reflections. However, it also causes some phase separation, particularly in 200cLi-MnO₂-600 where β-MnO₂ reappears.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The in-plane reflections shift to angles matching the stoichiometric LiMn₂O₄ reference pattern, and additional reflections like (111), (222), and (351) become clearly visible.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 2θχ geometry allows comparison of diffraction features that are less constrained by surface-normal orientation. This makes it suitable for assessing overall phase formation and crystallinity differences induced by annealing. It helps reveal sharpening and emergence of LiMn₂O₄ reflections.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The (111) and (222) both correspond to the same crystal phase.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_4_fig4.jpg","caption":"Fig.4. XRD patterns of selected $\\mathrm{HfO_2}$ films grown on glass substrates. Growth temperatures are indicated by labels. Reflections are indexed as monoclinic $\\mathrm{HfO_2}$ . The film thicknesses are 170, 200, 132, and $101~\\mathrm{nm}$ for patterns counted from top to bottom.","id":"train/atomic-layer-deposition/experimental-usecase/4/fig4","sample_id":"atomic-layer-deposition/experimental-usecase/4/fig4","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":516,"height":350,"image_format":"jpeg","image_sha256":"43b62497151cf64333cf858be7001c07903492196d05460d02b33f1213f0469d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":514,"height":346}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays X-ray diffraction patterns of multiple HfO2 samples prepared at different temperatures, showing that growth of crystalline phase(s) does not occur below 200 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | °2Θ |\\n|---|---|\\n| 150 °C | |\\n| 200 °C | Peaks at 18, 35, 36 |\\n| 225 °C | Peaks at 18, 25, 28, 34, 35, 36, 39, 50, 51, 57, 60 |\\n| 300 °C | Peaks at 18, 25, 28, 34, 35, 36, 39, 50, 51, 57, 60, 76 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Borosilicate glass.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"150, 200, 225 and 300 °C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Monoclinic HfO2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As temperature increases, so too does the intensity of the refraction peaks. At 150 °C, the temperature is too low for crystallization to occur. This is why no refraction peaks were observed at this temperature. The refraction peaks appear at 200 °C and are strongest at 225 °C.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_4_fig5.jpg","caption":"Fig.5. XRD patterns of selected $\\mathrm{HfO_2}$ films grown on silicon substrates. Growth temperatures are indicated by labels. Subscripts M, T, and O at indexed reflections denote monoclinic, tetragonal, and orthorhombic phases, respectively. The film thicknesses are 170, 150, 132, and $132\\mathrm{nm}$ for patterns counted from top to bottom.","id":"train/atomic-layer-deposition/experimental-usecase/4/fig5","sample_id":"atomic-layer-deposition/experimental-usecase/4/fig5","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":511,"height":367,"image_format":"jpeg","image_sha256":"3d5f0ae811eb5b789aa1afe109c6e82b3e2b69fa4f3b6dc1413215badb0db79b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":5,"width":508,"height":365}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a series of X-ray diffraction peaks of four HfO2 samples prepared on Si(100) at different temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | °2Θ |\\n|---|---|\\n| 200 °C | Peaks at 18, 25, 35, 36, 69 |\\n| 250 °C | Peaks at 18, 25, 28, 34, 35, 36, 39, 50, 51, 57, 60, 69 |\\n| 275 °C | Peaks at 18, 25, 28, 34, 35, 36, 39, 50, 51, 57, 60, 69 |\\n| 300 °C | Peaks at 25, 28, 34, 35, 36, 39, 50, 51, 57, 60, 76 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Silicon/Si(100).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200, 250, 275 and 300 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Similar to figure 4, as the temperature increases, so too does the intensity of the refraction peaks corresponding to monoclinic HfO2. At 300 °C, the nucleation density decreases compared to lower temperatures, which causes an overall decrease of the HfO2 refraction peaks.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Two metastable phases of HfO2, namely the tetragonal and orthorhombic phases.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_40_fig_4.jpg","caption":"FIG. 4. XRD patterns obtained from the TiN and Ti-Si-N films deposited by PEALD.","id":"train/atomic-layer-deposition/experimental-usecase/40/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/40/fig_4","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":581,"height":578,"image_format":"jpeg","image_sha256":"aac52662b65e72f55edafeebde9c22a3b783fbd1db72226bbd71bd6d2f161508","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":577,"height":574}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Stacked XRD patterns comparing TiN and Ti–Si–N films deposited by plasma-enhanced ALD. The TiN film exhibits clear polycrystalline TiN reflections with a dominant (200) orientation, whereas the Ti–Si–N film shows strongly suppressed and broadened TiN-related features, indicating a largely X-ray amorphous or nanocrystalline structure due to silicon incorporation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample Name | Labeled Peak | 2θ (°) | Observed Intensity & Shape |\\n|-------------|--------------|--------|----------------------------|\\n| TiN PEALD | TiN(111) | ~36–37 | Low to moderate, sharp peak |\\n| | TiN(200) | ~42–43 | High, sharp peak (dominant orientation) |\\n| | Si substrate | ~55 | Very high, sharp peak |\\n| | TiN(220) | ~61–62 | Low, sharp peak |\\n| Ti–Si–N PEALD | TiN-related features | ~36–43 | Very weak, broad features |\\n| | Si substrate | ~55 | Very high, sharp peak |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Polycrystalline rock-salt TiN with strong (111), (200), and (220) peaks.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TiN(200) reflection.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Ti–Si–N film shows strongly weakened and broadened TiN-related features compared with the sharp, well-defined reflections in TiN. This indicates a substantial reduction in long-range crystalline order caused by silicon incorporation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_40_fig_6.jpg","caption":"FIG. 6. XPS peaks of (a) nitrogen $1s$ and (b) silicon $2p$ measured for Ti-Si-N films by PEALD.","id":"train/atomic-layer-deposition/experimental-usecase/40/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/40/fig_6","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":394,"height":736,"image_format":"jpeg","image_sha256":"003f26798440e6939991170979efb30efb759b542c4e371f39a7b93ca5b2f234","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":16,"y":1,"width":377,"height":364},{"panel_id":"b","x":4,"y":370,"width":390,"height":363}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This panel shows the N 1s XPS spectrum of Ti–Si–N. It contains Ti–N and Si–N bonding components.\"},{\"panel_id\":\"b\",\"text\":\"This panel shows the Si 2p XPS spectrum of Ti–Si–N. The peak matches Si–N bonding.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Peak assignment | Curve style | Binding energy (eV) | Relative intensity |\\n|-----------------|-------------|---------------------|-------------------|\\n| Ti–N bonding | Dash-dot | ~397.0 | High |\\n| Si–N bonding | Dashed | ~398.5 | Medium |\\n| Total N 1s | Solid | ~397.2 (envelope) | Total |\"},{\"panel_id\":\"b\",\"text\":\"| Peak assignment | Curve style | Binding energy (eV) | Chemical state |\\n|-----------------|-------------|---------------------|----------------|\\n| Si₃N₄-like | Solid | ~102.0 | Si–N bonding |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Peak deconvolution.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Nitrogen bonds to both titanium and silicon in the film. Each bonding environment shifts the binding energy slightly. Multiple components are therefore required to represent the spectrum.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mixed bonding increases structural disorder. This disrupts diffusion pathways. It improves barrier performance.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Si–N bonding consistent with a Si₃N₄-like chemical environment.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_40_fig_8.jpg","caption":"FIG. 8. XRD patterns of $\\mathrm{Cu / PEALD}$ TiN $10 \\mathrm{nm} / \\mathrm{Si}$ and $\\mathrm{Cu / PEALD}$ Ti-Si-N $10 \\mathrm{nm} / \\mathrm{Si}$ as a function of annealing temperature.","id":"train/atomic-layer-deposition/experimental-usecase/40/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/40/fig_8","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":480,"height":1056,"image_format":"jpeg","image_sha256":"8a7c33b93cfa175d59b049eabdc78bf2b94d8d13e693d0c37caccabe602cf54f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":478,"height":511},{"panel_id":"b","x":2,"y":540,"width":474,"height":513}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XRD patterns of Cu/PEALD TiN (10 nm)/Si after annealing from 450 °C to 600 °C. Cu(111), Cu(200), and Cu(220) peaks grow with temperature. This shows loss of barrier stability at high temperature.\"},{\"panel_id\":\"b\",\"text\":\"XRD patterns of Cu/PEALD Ti–Si–N (10 nm)/Si from no annealing to 700 °C. Cu peaks appear later and grow more slowly than in TiN. This shows improved thermal stability of Ti–Si–N.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (degree) | Phase / Peak | Intensity |\\n|-------------|--------------|------------|\\n| ~43.3 | Cu(111) | strongest observed reflection |\\n| ~50.4 | Cu(200) | high |\\n| ~74.1 | Cu(220) | medium |\"},{\"panel_id\":\"b\",\"text\":\"| 2θ (degree) | Phase / Peak | Intensity |\\n|-------------|--------------|----------|\\n| ~43.3 | Cu(111) | strongest observed reflection |\\n| ~50.4 | Cu(200) | medium |\\n| ~74.1 | Cu(220) | low (no annealing) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increasing intensity of Cu(111), Cu(200), and Cu(220) reflections with annealing temperature indicates copper grain growth and diffusion through the TiN barrier. This suggests that the TiN layer loses its barrier functionality at elevated temperatures, allowing Cu atoms to penetrate and crystallize on the silicon substrate. The rapid peak emergence above 550 °C reflects limited thermal stability of the PEALD TiN barrier.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 550 °C and 600 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Copper diffusion becomes clearly evident between 550 °C and 600 °C.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The delayed appearance and reduced intensity of Cu diffraction peaks demonstrate that TiSiN effectively suppresses copper diffusion during high-temperature annealing. This indicates superior barrier performance compared to TiN, maintaining interfacial stability up to 700 °C. Such thermal robustness makes TiSiN more suitable for backend interconnect processes requiring high-temperature reliability.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_44_figure_4.jpg","caption":"Figure 4. X-ray diffraction patterns of ALD (a) PbTe thin films for 2000 cycles (sample # PbTe-10) and PbSe thin films for 4000 cycles (sample # PbSe-13) prepared at $170^{\\circ}\\mathrm{C}$ , respectively.","id":"train/atomic-layer-deposition/experimental-usecase/44/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/44/figure_4","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/Zhang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":667,"height":533,"image_format":"jpeg","image_sha256":"a3daaac30cec9d38c99a11c3aa91bdef2f26a1d8f10b80cea2ea88c62e471330","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":3,"width":661,"height":527}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart is an XRD pattern plotting diffracted intensity (arbitrary units) versus 2θ, showing the characteristic reflections of PbSe ((200), (400), (220)) and PbTe ( (200), (400)) and the substrate Si peaks.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Measurement | Angle (2θ) | Intensity in 10^3 (arb.u) | hkl | Assignment |\\n|---|---|---|---|---|\\n|PbTe film for 2000 cycles |27.55 |15.3|200 | PbTe |\\n|PbTe film for 2000 cycles |32.89|1.7|-|Si|\\n|PbTe film for 2000 cycles |39.47|1.7|400|PbTe|\\n|PbTe film for 2000 cycles |56.85|2.33|220|PbTe|\\n|PbSe film for 2000 cycles|29.15|87.9|200| PbSe|\\n|PbSe film for 2000 cycles|32.95|1.39|-|Si|\\n|PbSe film for 2000 cycles|60.29|7.92|400|PbSe|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"PbSe appears to have higher crystallinity. Its XRD peaks are stronger and sharper than in PbTe sample. This indicates a larger fraction of well-ordered crystalline material.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"(200) crystallographic orientation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"All reflections are even, which is consistent with fcc.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"All reflections are even, which is consistent with fcc.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_45_figure_3.jpg","caption":"Figure 3. (Color online) Grazing incidence XRD spectra for a remote plasma ALD Pt film $29\\mathrm{mm}$ thickness),a thermal ALD Pt film $27~\\mathrm{nm}$ thickness),and a remote plasma ALD $\\mathrm{PtO_2}$ film $27~\\mathrm{nm}$ thickness).The Miller indexes of cubic Pt are indicated.","id":"train/atomic-layer-deposition/experimental-usecase/45/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/45/figure_3","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":597,"height":480,"image_format":"jpeg","image_sha256":"a922581bc7d1edb3aab3a2c01d9b118446e86d992ce11309984bcfad4a8ac6e9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":591,"height":472}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a comparison between the X-ray diffraction patterns of Pt (grown with either plasma or thermal ALD) and PtO₂.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (degrees) | Pt (plasma): intensity (a.u) | Pt (thermal): intensity (a.u) | PtO₂: intensity (a.u | hkl |\\n|---|---|---|---|---|\\n| 40.31 | 1.76 | 0.16 | 0 | 111 |\\n| 46.58 | 0.53 | 0 .86| 0 | 200 |\\n| 67.98 | 3.14 | 0.81 | 0 | 220 |\\n| 81.73 | 0.39 | 0.06 | 0 | 311 |\\n| 86.22 | 0.07 | 0 | 0 | 222 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1) Pt (plasma): highest crystallinity.\\n2) Pt (thermal): intermediate crystallinity.\\n3) PtO₂: lowest crystallinity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The XRD pattern does not show clear diffraction peaks. The absence of such peaks rules out a crystalline α or β modification. Therefore, the PtO₂ film is best described as predominantly amorphous or nanocrystalline.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"111 and 311\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_49_figure_2.jpg","caption":"Figure 2. XPS spectra of a) Mo 3d and b) S 2p for the $\\mathrm{MoS_2}$ films deposited on $\\mathrm{SiO_2}$ at varying temperatures. The different oxidation states and compounds are indicated by dashed lines.","id":"train/atomic-layer-deposition/experimental-usecase/49/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/49/figure_2","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/Shen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":636,"height":503,"image_format":"jpeg","image_sha256":"cb49e99aa49ac168cc88e9fc5d8608e3e69df1fb69c99106b194f7a86b908a20","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":6,"width":343,"height":500},{"panel_id":"b","x":343,"y":4,"width":293,"height":497}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents X-ray Photoelectron Spectroscopy (XPS) spectra of Molybdenum Disulfide (MoS₂) films deposited between 200 °C and 300 °C. – Mo 3d: At 200 °C, the spectrum shows a mixture of Mo⁶⁺ species (oxide or unreacted precursor, ~236 eV) and Mo⁴⁺ states characteristic of MoS₂ (~229/233 eV). As the deposition temperature increases to 250 °C and 275 °C, the spectra are dominated by a sharp Mo⁴⁺ doublet, indicating improved formation of stoichiometric MoS₂.\"},{\"panel_id\":\"b\",\"text\":\"– S 2p: Low-temperature films exhibit peak broadening toward higher binding energies (S⁰ or S₂²⁻), suggesting incomplete sulfidation. At higher temperatures, the spectra evolve into a clean S²⁻ doublet, confirming the formation of a well-defined MoS₂ lattice.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Mo 3d |\\n|---|---|\\n| 236 | Mo^{6+} |\\n| 232 | Mo^{4+} |\\n| 228 | 300 °C |\\n| 225 | 275 °C |\\n| 220 | 250 °C |\\n| 215 | 225 °C |\\n| 210 | 200 °C |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | S 2p |\\n|---|---|\\n| 166 | S^{0}/S^{2-} |\\n| 164 | S^{2-} |\\n| 162 | 300 °C |\\n| 160 | 275 °C |\\n| 158 | 250 °C |\\n| 156 | 225 °C |\\n| 154 | 200 °C |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The final step is transferring the sample into the XPS ultra-high vacuum chamber without air exposure. This is critical to prevent surface oxidation, which would distort the measured Mo and S chemical states and obscure the true film composition.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"300°C is preferable for purer MoS₂. The trade-off is the higher thermal budget, which may be incompatible with temperature-sensitive substrates or back-end-of-line (BEOL) integration in advanced chips.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing temperature reduces Mo⁶⁺ and increases Mo⁴⁺. The cause is more complete precursor decomposition and ligand removal at higher temperature, which minimizes oxygen incorporation and favors the formation of Mo-S bonds over Mo-O bonds.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies an optimal semiconductor band gap and high channel mobility. Stoichiometric MoS₂ has a well-defined band gap (~1.8 eV for monolayers) and minimal defect scattering from oxides or sulfur vacancies, enabling efficient transistor operation.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_49_figure_6.jpg","caption":"Figure 6. a) Secondary electron cutoff and b) Ti 2p spectra of TiNTs (violet) and $\\mathrm{MoS}_2 / \\mathrm{TiNTs}$ (red). Valence band spectra of c) TiNTs and d) $\\mathrm{MoS}_2/$ TiNTs. e) Band diagram of the $\\mathrm{MoS}_2 / \\mathrm{TiNTs}$ heterojunction.","id":"train/atomic-layer-deposition/experimental-usecase/49/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/49/figure_6","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"spectra chart"},{"panel_id":"d","label":"spectra chart"},{"panel_id":"e","label":"conceptual diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/Shen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":1009,"height":620,"image_format":"jpeg","image_sha256":"639d5d2c4474c25c57a2966333f07fea7e84b20201773885ca114deb39478e0a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":6,"width":352,"height":306},{"panel_id":"b","x":1,"y":323,"width":357,"height":292},{"panel_id":"c","x":372,"y":3,"width":233,"height":309},{"panel_id":"d","x":369,"y":326,"width":240,"height":294},{"panel_id":"e","x":613,"y":79,"width":394,"height":492}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a detailed band alignment analysis of the MoS₂/TiNTs heterojunction using Ultraviolet Photoelectron Spectroscopy (UPS) and XPS valence band measurements.Work Function : The secondary electron cutoff shifts from 4.92 eV for TiNTs to 5.15 eV for the MoS₂/TiNTs heterostructure, indicating an increase in work function (ΔΦ = 0.23 eV) upon MoS₂ deposition.\"},{\"panel_id\":\"b\",\"text\":\"The Ti 2p₃/₂ core-level peak shifts by 0.20 eV toward higher binding energy in the heterostructure, indicating upward band bending at the TiO₂ interface due to electron transfer from TiNTs to MoS₂.\"},{\"panel_id\":\"c\",\"text\":\"The valence band maximum is located 3.1 eV below the Fermi level for TiNTs and shifts to 1.1 eV below the Fermi level after MoS₂ coating, reflecting a significant modification of the electronic structure.\"},{\"panel_id\":\"e\",\"text\":\"The constructed energy band diagram reveals a type-II (staggered) band alignment, where the conduction band minimum of TiO₂ lies below that of MoS₂, while the valence band maximum of MoS₂ lies above that of TiO₂. This alignment favors efficient charge separation, with electrons transferring from MoS₂ to TiO₂ and holes accumulating in MoS₂.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Kinetic Energy (eV) | Intensity (a.u.) |\\n|---|---|\\n| 4 | 0 |\\n| 5 | 4.92 |\\n| 6 | 5.15 |\\n| 7 | 0 |\"},{\"panel_id\":\"c\",\"text\":\"| Binding Energy (eV) | Intensity (a.u.) |\\n|---|---|\\n| 4 | 0 |\\n| 2 | 3.1 |\\n| 0 | 0 |\\n|-2 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Intensity (a.u.) |\\n|---|---|\\n| 468 | 0 |\\n| 466 | 0 |\\n| 464 | 0 |\\n| 462 | 0 |\\n| 460 | 0 |\\n| 458 | 0 |\\n| 456 | 0 |\"},{\"panel_id\":\"d\",\"text\":\"| Binding Energy (eV) | Intensity (a.u.) |\\n|---|---|\\n| 2 | 0 |\\n| 1 | 0 |\\n| 0 | 0 |\\n|-1 | 0 |\"},{\"panel_id\":\"e\",\"text\":\"| | VL | CBM | EF | VBM |\\n|---|---|---|---|---|\\n| TiO2 | 4.9 | 3.1 | 5.1 | 0.2 |\\n| MoS2 | 1.1 | 0 | 0 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The red curve would shift to higher kinetic energy, reflecting an increased work function due to MoO₃ formation. This would disrupt the Type-II band alignment by blocking electron transfer from MoS₂ to TiO₂, increasing recombination and severely degrading photocatalytic performance.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Platinum (Φ ≈ 5.65 eV) is the appropriate contact because its high work function aligns well for efficient hole extraction from the valence band. In contrast, aluminum (Φ ≈ 4.1 eV) would form a barrier to holes and favor electron injection.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TiO₂ provides the strong oxidation power because its deep valence band maximum (3.1 eV) corresponds to highly energetic holes capable of generating oxidative species such as hydroxyl radicals. In the Type-II heterostructure, holes preferentially accumulate in MoS₂ (VBM at 1.1 eV), which improves charge separation but partially reduces the overall oxidation strength compared to bare TiO₂.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher binding energy implies a more positive environment (electron loss). The shift to higher binding energy (+0.20 eV) in the TiO_2 (TiNTs) indicates that the Fermi level has moved closer to the valence band (or bands bent upward), which corresponds to a depletion of electrons.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_50_fig_6.jpg","caption":"Fig. 6 (a) XRD patterns of $45 \\mathrm{nm}$ -thick ZnO:B films deposited at $150^{\\circ}\\mathrm{C}$ with different doping fractions $\\mathrm{DF} = 0.000 - 0.094$ and (b) ZnO powder spectrum for reference. The peak labelled as 'XRD stage' corresponds to a peak related to the stage onto which the samples are mounted to perform the measurement, and its intensity is inversely proportional to the surface area of the sample.","id":"train/atomic-layer-deposition/experimental-usecase/50/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/50/fig_6","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/Garcia-Alonso et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":625,"height":686,"image_format":"jpeg","image_sha256":"1cf1170d6ef1aab14f3765cec9dd7674cbd90db0469a3c6a2d067be3318c0f4e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":4,"width":622,"height":464},{"panel_id":"b","x":0,"y":464,"width":625,"height":219}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a series of X-ray diffraction (XRD) spectra for ZnO:B samples with varying defect fractions (DF) indicated\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the powder diffraction pattern of intrinsic ZnO for reference\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| DF = 0.094 | DF = 0.075 | DF = 0.053 | DF = 0.027 | DF = 0.014 |\\n| --- | --- | --- | --- | --- |\\n| 0.094 | 0.075 | 0.053 | 0.027 | 0.014 |\"},{\"panel_id\":\"b\",\"text\":\"| 100 | 002 | 101 | 102 | 110 | 103 |\\n| --- | --- | --- | --- | --- | --- |\\n| 32 | 34.5 | 36 | 47.5 | 57 | 63 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No peaks indicative of (crystalline) boron oxide phases were observed in the studied range of doping fractions. The intensity of the peaks decreased abruptly at a doping fraction of DF 4 0.053 for ZnO:B films as expected for highly-doped ZnO films.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The peak labelled as ‘XRD stage’ corresponds to a peak related to the stage onto which the samples are mounted to perform the measurement, and its intensity is inversely proportional to the surface area of the sample.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The intrinsic ZnO films were polycrystalline and exhibited an hexagonal wurtzite structure with a weak (002) texture (i.e., preferential growth orientation), consistent withliterature\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_52_figure_7.jpg","caption":"Figure 7. X-ray diffraction measurements $(\\lambda = 1.54\\mathrm{\\AA})$ revealing overlapping peaks for $\\mathrm{Co}_3\\mathrm{O}_4$ with a preferential (111) orientation and crystalline $\\mathrm{LiCoO_2}$ after annealing at $700^{\\circ}\\mathrm{C}$ for 6 minutes. The spectra have been offset vertically for clarity. The Co:Li dosing ratio was 2:1 $(x = 2)$ .","id":"train/atomic-layer-deposition/experimental-usecase/52/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/52/figure_7","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/Donders et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":672,"height":469,"image_format":"jpeg","image_sha256":"e54024425a9dd98ae93d3c6fec5ac5efe25e770b6c347e20d1d46aff34fe3c43","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":3,"width":667,"height":463}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays X-ray diffraction patterns for two samples labeled 'annealed' and 'as-deposited'. Peaks correspond to specific crystal planes of Co₃O₄, LiCoO₂, and platinum\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ angle, ° | Peak assignment | annealed | as-deposited |\\n|---|---|---|---|\\n| 19 | Co₃O₄ (111) / LiCoO₂ (003) | 1.0 | 0.15 |\\n| 28 | Si (111) | 0.12 | 0.05 |\\n| 31 | Co₃O₄ (220) | 0.10 | 0.05 |\\n| 37 | Co₃O₄ (311) + LiCoO₂ (101) | 0.18 | 0.12 |\\n| 40 | Pt (111) | 0.10 | 0.08 |\\n| 45 | LiCoO₂ (104) | 0.08 | 0.03 |\\n| 47 | Pt (200) | 0.06 | 0.03 |\\n| 63 | LiCoO₂ (107) | 0.05 | 0.03 |\\n| 68 | Pt (220) | 0.85 | 0.75 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Annealing at 700 C for 6 minutes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Co3O4\\n\\nLiCoO2\\n\\nPt\\n\\nSi\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The LiCoO2 film is used as a cathode material, and the paper emphasizes that a heat treatment around 700 C is needed to obtain electrochemically active, crystalline LiCoO2. Crystallinity is associated with establishing the proper LiCoO2 phase that supports reversible lithium insertion and extraction. This figure supports that goal by showing that annealing produces distinct diffraction features consistent with a crystalline film.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_54_figure_6.jpg","caption":"Figure 6. (Color online) XRD spectra of Cu-TaN-Si stacks with $50~\\mathrm{nm}$ of $\\mathrm{Cu}$ and $29~\\mathrm{nm}$ of TaN. Spectra are given for samples annealed at 200, 400, 600, 650, and $700^{\\circ}\\mathrm{C}$ . The most intense lines for the diffraction pattern of cubic TaN, Cu, and $\\mathrm{Cu_3Si}$ powder samples are indicated. The spectra are shifted vertically for clarity.","id":"train/atomic-layer-deposition/experimental-usecase/54/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/54/figure_6","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":661,"height":517,"image_format":"jpeg","image_sha256":"a2d17b9855c175a582bf23fe66adf1711040755d30914ef2617a3c1b28c728fd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":658,"height":513}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a series of X-ray diffraction patterns of Cu–TaN–Si stacks annealed at different temperatures (200, 400, 600, 650 and 700 °C), showing the intensity of peaks corresponding to TaN, Cu, and Cu₃Si reference samples.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | 2θ (degrees) |\\n|---|---|\\n| 700 °C | Peaks at 35, 42, 43, 50, 61, 65, 70, 82, 90, 95 |\\n| 650 °C | Peaks at 35, 42, 43, 50, 61, 65, 90, 95 |\\n| 600 °C | Peaks at 35, 42, 43, 50, 61, 90, 95 |\\n| 400 °C | Peaks at 35, 42, 43, 50, 61, 90, 95 |\\n| 200 °C | Peaks at 35, 42, 43, 50, 61, 90, 95 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"29 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200, 400, 600, 650 and 700 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the annealing temperature increases, the TaN lines remain unaffected. the intensity of the Cu lines drops for the samples annealed at 650 and 700°C, and, most importantly, Cu3Si lines appear for the samples annealed above 600°C. This means that between 600 and 650°C, Cu starts diffusing through the TaN film and the barrier fails.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_54_figure_7.jpg","caption":"Figure 7. (Color online) XRD spectra of Cu-TiN-Si stacks with $50~\\mathrm{nm}$ of $\\mathrm{Cu}$ and $32~\\mathrm{nm}$ of TiN. Spectra are given for samples annealed at 200, 400, 600, and $700^{\\circ}\\mathrm{C}$ . The most intense lines for the diffraction pattern of cubic TiN, Cu, and $\\mathrm{Cu_3Si}$ powder samples are indicated. The spectra are shifted vertically for clarity.","id":"train/atomic-layer-deposition/experimental-usecase/54/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/54/figure_7","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":669,"height":530,"image_format":"jpeg","image_sha256":"47c78ab84c80275b95629c7ff4c9abc3fc2c710da3ef6a870e94b948c77126b8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":0,"width":661,"height":528}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays X-ray diffraction patterns of samples annealed at different temperatures (200°C, 400°C, 600°C, and 700°C) with peaks corresponding to TiN, Cu, and Cu₃Si phases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | 2θ (degrees) |\\n|---|---|\\n| 700 °C | Peaks at 42, 50, 74, 90, 95 |\\n| 600 °C | Peaks at 42, 50, 74, 90, 95 |\\n| 400 °C | Peaks at 42, 50, 74, 90, 95 |\\n| 200 °C | Peaks at 42, 50, 74, 90, 95 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"32 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200, 400, 600 and 700 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"When compared to the reference powder samples of cubic TiN, Cu, and Cu3Si, the TiN lines are not affected by the annealing temperature. The Cu lines become narrower and more intense as temperature increases. Lastly, even at 700 °C, no peaks corresponding to Cu3Si are observed, indicating that barrier failure does not occur.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_59_fig_8.jpg","caption":"FIG. 8. (Color online) Optical emission spectroscopy (OES) during remote plasma ALD: (a) emission from (1) a regular $\\mathrm{H}_{2}$ plasma and (2) a $\\mathrm{H}_{2}$ plasma ignited after a preceding PDMAT dose as recorded in the first $400\\mathrm{~ms}$ after the plasma strike. The inset shows a magnification of the region around $400\\mathrm{~nm}$ . (b) Time-resolved OES at $388\\mathrm{~nm}$ during the $\\mathrm{H}_{2}$ plasma step for an ALD cycle with (open symbols) and without (closed symbols) PDMAT dosing. During the OES measurements the chamber was wall heated to $150^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/59/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/59/fig_8","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"multiple scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/Langereis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"59","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":636,"height":950,"image_format":"jpeg","image_sha256":"2f7ece771fe6d31fd109fda139a0d6e3a5cb3e359918790b45051ee81976b574","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":1,"width":628,"height":459},{"panel_id":"b","x":4,"y":478,"width":628,"height":464}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a optical emission spectroscopy (OES) during remote plasma ALD from a regular H2 plasma and a H2 plasma ignited after the PDMAT dose.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the temporal variation of OES intensity at 388 nm, showing an initial peak followed by a decay to a steady state.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | regular H2 plasma | ignited H2 plasma |\\n| --- | --- | --- |\\n| 300 | - | - |\\n| 400 | peak at ~400 | peak at ~400 |\\n| 500 | peak at ~490 | peak at ~490 |\\n| 600 | peak at ~605, 650 | peak at ~605, 650 |\\n| 700 | - | - |\\n| 800 | - | - |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | With PDMAT dosing | Without PDMAT dosing |\\n| --- | --- | --- |\\n| 0 | 0 | 8 |\\n| 2 | 90 | 85 |\\n| 4 | 90 | 85 |\\n| 6 | 85 | 85 |\\n| 8 | 85 | 85 |\\n| 10 | 85 | 85 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A plasma ALD process.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"H2 plasma was used for deposition in both regular and ignited conditions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Igniting the H2 plasma gas increases the intensity peak between 360 and 420 nm.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The OES intensity remains constant for the sample without PDMAT dosing. However, it increases with the PDMAT dosing, but then decreases strongly after 1 s of dosing.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_60_figure_5.jpg","caption":"Figure 5. EDX spectra of the $\\mathrm{Y}_2\\mathrm{O}_3$ coating layer at four different positions in silicon micropillar arrays (panel d inset) of (a) with $\\mathrm{H}_2\\mathrm{O}$ , (b) $\\mathrm{O}_2$ plasma, and (c) $\\mathrm{H}_2\\mathrm{O}$ plasma. (d) Y peak Gaussian area at four different depths acquired from EDX line scans.","id":"train/atomic-layer-deposition/experimental-usecase/60/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/60/figure_5","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"},{"panel_id":"d","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/Zhao et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"60","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":842,"height":700,"image_format":"jpeg","image_sha256":"972fe44098646f281df0bf722b100fe16097cbb927bc687e5d4a9de2bd2f9f9e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":421,"height":355},{"panel_id":"b","x":427,"y":0,"width":409,"height":352},{"panel_id":"c","x":8,"y":359,"width":401,"height":340},{"panel_id":"d","x":427,"y":347,"width":411,"height":350}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_60_figure_6.jpg","caption":"Figure 6. XRD patterns of $\\mathrm{Y}_2\\mathrm{O}_3$ films for $\\mathrm{Y}(\\mathrm{EtCp})_2(\\mathrm{iPr - amd})$ with $\\mathrm{H}_2\\mathrm{O}$ , $\\mathrm{O}_2$ plasma, and $\\mathrm{H}_2\\mathrm{O}$ plasma.","id":"train/atomic-layer-deposition/experimental-usecase/60/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/60/figure_6","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/Zhao et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"60","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":430,"height":336,"image_format":"jpeg","image_sha256":"8c443192fa78864facf0fc689bc5b376c1a15f9a803f5cee8378fb84abcb5075","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":426,"height":332}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays X-ray diffraction patterns for Y2O3 films depositied using thermal H2O, plasma H2O and O2 plasma.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2 Theta (degree) | Intensity (a.u.) | Assignment | Precursor |\\n|---|---|---|---|\\n| 28.69 | 26 | (222) | H2O |\\n| 48.08 | 13 | (440) | H2O |\\n| 57.38 | 26 | (622) | H2O |\\n| 20.18 | 11 | (211) | O2 palsma |\\n| 28.69 | 51 | (222) | O2 palsma |\\n| 33.31 | 9 | (400) | O2 palsma |\\n| 42.22 | 7 | (431) | O2 palsma |\\n| 48.08 | 17 | (440) | O2 palsma |\\n| 57.38 | 21 | (622) | O2 palsma |\\n| 20.18 | 20 | (211) | H2O palsma |\\n| 28.69 | 78 | (222) | H2O palsma |\\n| 33.31 | 16| (400) | H2O palsma |\\n| 42.22 | 10 | (431) | H2O palsma |\\n| 48.08 | 35 | (440) | H2O palsma |\\n| 57.38 | 29 | (622) | H2O palsma |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The films are polycrystalline.XRD pattern displays sharp, distinct peaks, corresponding to specific crystallographic planes. An amorphous material would have broad peak.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The (222) plane.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Silicon, as indicated by the peak labeled \\\"Si\\\".\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_60_figure_7.jpg","caption":"Figure 7. XPS spectra of $\\mathrm{Y}_2\\mathrm{O}_3$ films of (a) survey, (b) $\\mathrm{Y}$ 3d, and (c) $\\mathrm{O}$ 1s for $\\mathrm{Y}(\\mathrm{EtCp})_2(\\mathrm{iPr - amd})$ with $\\mathrm{H}_2\\mathrm{O}$ , $\\mathrm{O}_2$ plasma, and $\\mathrm{H}_2\\mathrm{O}$ plasma.","id":"train/atomic-layer-deposition/experimental-usecase/60/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/60/figure_7","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/Zhao et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"60","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":1008,"height":292,"image_format":"jpeg","image_sha256":"31a9555ca5f6cb5da16bcc685d2b8add0c052287ee684e9bf9014280737ba7c9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":14,"y":6,"width":329,"height":287},{"panel_id":"b","x":347,"y":2,"width":327,"height":289},{"panel_id":"c","x":676,"y":0,"width":330,"height":289}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays XPS survey spectra for Y2O3 films depositied via thermal H2O, O2 palsma and H2O palsma, confirming the presence of O and Y.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays the XP-spectra of Y3d core level for Y2O3 films depositied via thermal H2O, O2 palsma and H2O palsma.\"},{\"panel_id\":\"c\",\"text\":\"TThe figure displays the XP-spectra of O1s core level for Y2O3 films depositied via thermal H2O, O2 palsma and H2O palsma, confirming the presence of O and Y.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Peak Intensity (a.u.) | Assignment | Sample |\\n|---|---|---|---|\\n|532|85| O1s| H2O plasma|\\n|323|62| Y2p 3/2| H2O plasma|\\n|311|62| Y2p 1/2| H2O plasma|\\n|183|20| -| H2O plasma|\\n|168|96| Y3d 3/2, Y3d 5/2| H2O plasma|\\n|34|17| -| H2O plasma|\\n|532|76| O1s| O2 plasma|\\n|323|50| Y2p 3/2| O2 plasma|\\n|311|77| Y2p 1/2| O2 plasma|\\n|183|21| - | O2 plasma|\\n|168|91| Y3d 3/2,Y3d 5/2| O2 plasma|\\n|34|12| -| O2 plasma|\\n|532|57| O1s| H2O |\\n|323|45| Y2p 3/2| H2O |\\n|311|59| Y2p 1/2| H2O |\\n|183|18| -| H2O |\\n|168|77| Y3d 3/2, Y3d 5/2| H2O |\\n|34|11| -| H2O |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Peak Intensity (a.u.) | Assignment | Sample |\\n|---|---|---|---|\\n|157.6|490| Y3d 5/2| H2O plasma|\\n|159.6|618| Y3d 3/2| H2O plasma|\\n|157.6|557| Y3d 5/2| O2 plasma|\\n|159.6|710| Y3d 3/2| O2 plasma|\\n|157.6|490| Y3d 5/2| H2O |\\n|159.6|619| Y3d 3/2| H2O |\"},{\"panel_id\":\"c\",\"text\":\"| Binding Energy (eV) | Peak Intensity (a.u.) | Assignment | Sample |\\n|---|---|---|---|\\n|530.2|888| O1s| H2O plasma|\\n|530.3|662| O1s| O2 plasma|\\n|530.1|725| O1s| H2O|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Y 3d and Y 3p.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 eV.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Shifts in the BE in O1s region.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It decreases.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_66_figure_1.jpg","caption":"Figure 1. XRD pattern comparisons of undoped $\\mathrm{ZnO}$ and Fe, Co, and Ni doped $\\mathrm{ZnO}$ layers with corresponding crystallographic (hkl) peak designations.","id":"train/atomic-layer-deposition/experimental-usecase/66/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/66/figure_1","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/Paskaleva et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"66","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":903,"height":567,"image_format":"jpeg","image_sha256":"3fcf0e283532863213ade8c4ff97ee66468fd7fdae881033b7995993f6506b21","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":4,"width":900,"height":560}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"T\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (deg) | Plane (hkl) | ZnO p-Si(100) | ZnO:Ni | ZnO:Co | ZnO:Fe |\\n|----------|-------------|---------------|--------|--------|--------|\\n| ~31.8 | (100) | ✓ | ✓ | ✓ | ✓ |\\n| ~34.4 | (002) | ✓ | ✓ | ✓ | ✓ |\\n| ~36.2 | (101) | ✓ | ✓ | ✓ | ✓ |\\n| ~47.5 | (102) | ✓ | ✓ | ✓ | ✓ |\\n| ~56.6 | (110) | ✓ | ✓ | ✓ | ✓ |\\n| ~62.8 | (103) | ✓ | ✓ | ✓ | ✓ |\\n| ~66.4 | (200) | ✓ | ✓ | ✓ | ✓ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A textured polycrystalline layer of nanosized ZnO with a predominant intensity of (100) and (002) index reflections,\\nwhich confirms the formation of ZnO with a hexagonal wurtzite structure, is observed for all films.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"While the intensity of reflections with index (100) remains almost the same for all samples, the intensity of (002) reflections varies depending on the doping element. A similar dependence between the intensities of (100) and (002) reflections is also observed for thin films with a low degree of TM doping (with less TM deposition cycles) in literature.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Pure ZnO: The orientation along the c-axis direction is significantly better expressed, which is proved by the high intensity of reflections with index (002) \\n2. Co-ZnO: Only reflections with index (100) were observed, indicating a change in the orientation\\nof the ZnO crystallites with an ab-plane perpendicular to the substrate \\n3. Ni-ZnO : Both orientations (100) and (002) (ab- and c- oriented respectively) are present\\n4. Fe-ZnO : The intensity of the (100) peak is substantially larger, that is, it is the preferred orientation. It is also seen that in addition to (100) and (002), a low intensity diagonal reflex (102), which is not observed in pure ZnO, also appears (\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"YEs\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_7_fig_7.jpg","caption":"Fig. 7. XRD patterns of a film grown on (1 0 0) silicon substrates at temperature of $150^{\\circ}\\mathrm{C}$ . 3000 cycles were used for film growth. The patterns show 1 0 1 and 2 0 0 reflections of anatase.","id":"train/atomic-layer-deposition/experimental-usecase/7/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/7/fig_7","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/Aarik et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":433,"height":444,"image_format":"jpeg","image_sha256":"41d9690393a09956279cdd0cb513f67244cd9d7abb330bf6747ec95311cf3175","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":430,"height":442}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XRD patterns collected at 15 mm and 45 mm from the leading edge of a film grown at 150 °C show diffraction features characteristic of anatase TiO₂. A strong, narrow (101) reflection appears at ~25.3°, while a weaker (200) reflection is visible near ~48°. No additional peaks are observed over the 20–60° range, indicating the absence of secondary crystalline phases. The close similarity between the two stacked patterns suggests lateral uniformity in phase and crystallinity across the sample.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (deg) | Peak assignment | Relative intensity | Trace |\\n|----------|-----------------|--------------------|-------|\\n| ~25.3 | Anatase (101) | Strong, sharp | 45 mm from leading edge |\\n| ~25.3 | Anatase (101) | Strong, sharp | 15 mm from leading edge |\\n| ~48.0 | Anatase (200) | Weak | 45 mm from leading edge |\\n| ~48.0 | Anatase (200) | Weak | 15 mm from leading edge |\\n| 20–60 | Background | Low, featureless | Both traces |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Anatase TiO₂.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Anatase TiO₂ is commonly favored because of its favorable electronic structure, higher surface reactivity, and stability at moderate growth temperatures. These properties make it suitable for applications such as photocatalysis, sensors, and dielectric layers, where controlled crystallinity and phase purity are important.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1) Growth temperature: 150 °C, 2) Number of cycles: 3000 ALD cycles, 3) Substrate: (100) silicon\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_11.jpg","caption":"Figure 11. Excitation spectra of Eu-HQA, Eu-TPA, and Eu-Cyt thin films on silicon substrates, illustrating the effect of the chosen organic precursor on the properties of the ALD/MLD deposited thin films.[55,318]","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_11","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_11","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":658,"height":534,"image_format":"jpeg","image_sha256":"deed7adfca1794190e7155c689de9674930dca292d250e7ce4c9b70f2f01df81","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":4,"width":658,"height":528}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays excitation spectra of three different compounds: Eu-HQA, Eu-TPA, and Eu-Cyt, across a range of wavelengths from 250 nm to 400 nm.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | Eu-HQA (Norm. Log Int.) | Eu-TPA (Norm. Log Int.) | Eu-Cyt (Norm. Log Int.) |\\n|---|---|---|---|\\n| 240 | 1.00 | 1.00 | 0.90 |\\n| 275 | 0.90 | 0.85 | 0.80 |\\n| 300 | 0.95 | 0.60 | 0.75 |\\n| 310 | 0.95 | 0.50 | 0.60 (Valley) |\\n| 350 | 0.90 | 0.05 (Valley) | 1.00 (Peak) |\\n| 375 | 0.75 | 0.20 (Bump) | 0.50 |\\n| 400 | 0.60 | 0.10 | 0.35 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Eu HQA.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It suggests the ligand acts as an efficient sensitizer, absorbing over a wider wavelength range and transferring energy to Eu3+.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The key comparison is the excitation intensity toward the long wavelength end of the spectrum. A film that retains significant excitation response near 365 to 405 nm is more compatible with common near UV LED excitation, whereas a film whose excitation drops strongly before that range will require shorter wavelength excitation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It enables excitation with readily available near UV light sources\\n\\nIt can reduce reliance on deep UV excitation, which can be more damaging to polymers and biological samples\\n\\nIt broadens design flexibility for illumination and sensing systems\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_14.jpg","caption":"Figure 14. Scheme for UC-enhanced solar-cell performance: a) portions of the solar spectrum utilized by different solar cell technologies, and the potential to extend the usability with different UC $\\mathsf{Ln}^{3 + }$ ions, b) integration of UC layers into the solar cell device, and c) enhanced performance of c-Si solar cell achieved with ALD-grown UC $(\\mathrm{Er},\\mathrm{Ho})_2\\mathrm{O}_3$ coating with three different thicknesses. Reproduced with permission from Elsevier, 2021 refs.[18,140]","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_14","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_14","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"apparatus diagram"},{"panel_id":"c","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":1006,"height":589,"image_format":"jpeg","image_sha256":"f3d5686a27d72effa8e5ff13608fc96837bd9402e791c5bdfb39bbb6f36efb6c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":580,"y":265,"width":422,"height":322},{"panel_id":"b","x":622,"y":0,"width":308,"height":262},{"panel_id":"a","x":4,"y":15,"width":579,"height":575}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_42_fig4.jpg","caption":"Fig.4 Deconvoluted peaks of (a and c) the Ti 2p XPS and (b and d) O 1s XPS spectra, deposited by (a and b) the conventional sequence and (c and d) the $\\mathsf{H}_2\\mathsf{O}$ -added sequence.","id":"train/atomic-layer-deposition/simulation-usecase/42/fig4","sample_id":"atomic-layer-deposition/simulation-usecase/42/fig4","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"},{"panel_id":"d","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/Yeonchoo Cho et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":652,"height":672,"image_format":"jpeg","image_sha256":"013375258df219adc1c544a198c761c626fb7e151bb2cf0caef12549663f7f63","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":11,"width":328,"height":319},{"panel_id":"b","x":329,"y":10,"width":323,"height":318},{"panel_id":"c","x":20,"y":360,"width":309,"height":312},{"panel_id":"d","x":329,"y":360,"width":323,"height":312}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS Ti 2p region showing signals of TiO2 and Ru for conventionally grown TiO2.\"},{\"panel_id\":\"b\",\"text\":\"XPS O 1s region showing signals of TiO2 and adsorbed O2 for conventionally grown TiO2.\"},{\"panel_id\":\"c\",\"text\":\"XPS Ti 2p region showing signals of TiO2 and Ru for TiO2 grown with H2O-added sequence.\"},{\"panel_id\":\"d\",\"text\":\"XPS O 1s region showing signals of TiO2 and adsorbed O2 for TiO2 grown with H2O-added sequence.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Species | Binding energy [eV] |\\n|---|---|\\n| TiO2 | Peaks at 458 and 464 |\\n| Ru | Peak at 460 |\"},{\"panel_id\":\"b\",\"text\":\"| Species | Binding energy [eV] |\\n|---|---|\\n| TiO2 | Peak at 529 |\\n| Abs. O2 | Peak at 531 |\"},{\"panel_id\":\"c\",\"text\":\"| Species | Binding energy [eV] |\\n|---|---|\\n| TiO2 | Peaks at 458 and 464 |\\n| Ru | Peak at 460 |\"},{\"panel_id\":\"d\",\"text\":\"| Species | Binding energy [eV] |\\n|---|---|\\n| TiO2 | Peak at 529 |\\n| Abs. O2 | Peak at 531 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 458 and 464 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"When comparing these two sets of XPS spectra, it becomes apparent that they are practically identical. The chemical environment of both titanium and oxygen species in both films are therefore highly similar, meaning that using H2O in the ALD process did not lead to a TiO2 film with significantly different properties.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 529 eV.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Oxygen components other than TiO2 that were absorbed in the ALD-grown layer during the synthesis.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_42_fig_5.jpg","caption":"Fig. 5 XRD spectra of the $\\mathrm{TiO_2}$ thin film deposited by various sequences. Values in time (s) denote the $\\mathrm{H}_2\\mathrm{O}$ feeding time in the $\\mathrm{H}_2\\mathrm{O}$ -added sequence.","id":"train/atomic-layer-deposition/simulation-usecase/42/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/42/fig_5","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/Yeonchoo Cho et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":430,"height":420,"image_format":"jpeg","image_sha256":"c355c27e846255edbfc2fcc177861453a4f28ee23b290bfab340c920e17dcf10","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":7,"width":426,"height":412}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays X-ray diffraction patterns of the samples prepared with 3, 5 and 10 second H2O feeding time and one sample without H2O feeding.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | 2θ [degree] |\\n|---|---|\\n| w/o H2O | Peaks at 27.5, 38.5, 42, 44 |\\n| 3 s | Peaks at 27.5, 38.5, 42, 44 |\\n| 5 s | Peaks at 27.5, 38.5, 42, 44 |\\n| 10 s | Peaks at 27.5, 38.5, 42, 44 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"27.3.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 37.5.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 44.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The observed diffraction peaks are identical for all samples with regard to position and intensity. This means that all samples have nearly identical crystalline phases/structure.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_43_figure_7.jpg","caption":"Figure 7. XPS measurements of Ge $3d$ at (a) $90^{\\circ}$ and (b) $15^{\\circ}$ takeoff angles for samples with $1\\mathrm{nm}$ ALD grown $\\mathrm{Al}_2\\mathrm{O}_3$ capping on Ge:H (black), $\\mathrm{GeO}_x(3\\mathrm{\\AA}) / \\mathrm{Ge}$ (red), and $\\mathrm{GeO}_x(5\\mathrm{\\AA}) / \\mathrm{Ge}$ (blue) surfaces. The chemical shifts for different oxidation states are indicated underneath.51 Inset of panel a is the numerical deconvolution in percentage for the areas of oxidation state peaks [normalized by $\\mathrm{Ge}^0$ $(3d_{3 / 2} + 3d_{5 / 2})$ peak area] at $90^{\\circ}$ while the deconvolution of $15^{\\circ}$ measurement is limited by its low signal-to-noise ratio. The numerical deconvolution is based on ref 52 with a Tougard background profile. Binding energy shift for Ge $3d_{3 / 2}$ with respect to Ge $3d_{5 / 2}$ is $0.58\\mathrm{eV}$ , and the core level shifts for $+1, + 2, + 3,$ and $+4$ are 0.8, 1.8, 2.7, and $3.3\\mathrm{eV}$ with respect to Ge $3d_{5 / 2}$ , respectively.","id":"train/atomic-layer-deposition/simulation-usecase/43/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/43/figure_7","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/Yuanxia Zheng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":669,"height":320,"image_format":"jpeg","image_sha256":"87f50f11627f8800bcec46bb7d3026addbc0e69c379d120c1ff0bf4cc0cf4c2c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":36,"width":328,"height":283},{"panel_id":"b","x":347,"y":38,"width":318,"height":282}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS measurements of the Ge 3d core level were performed at 90° photoelectron takeoff angles for samples with a 1 nm ALD-grown Al₂O₃ capping layer on Ge:H (black), GeOₓ (3 Å)/Ge (red), and GeOₓ (5 Å)/Ge (blue) surfaces. The chemical shifts corresponding to different Ge oxidation states are indicated below the spectra. The inset shows the numerical deconvolution, expressed as percentages of the oxidation-state peak areas normalized to the Ge⁰ (3d₃/₂ + 3d₅/₂) peak area at 90°. The fitting procedure follows Ref. 52 and employs a Tougaard background. The binding energy separation between the Ge 3d₃/₂ and Ge 3d₅/₂ peaks is 0.58 eV, while the core-level shifts for Ge⁺¹, Ge⁺², Ge⁺³, and Ge⁺⁴ oxidation states are 0.8, 1.8, 2.7, and 3.3 eV, respectively, relative to the Ge 3d₅/₂ peak.\"},{\"panel_id\":\"b\",\"text\":\"XPS measurements of the Ge 3d core level were performed at 15° photoelectron takeoff angles for samples with a 1 nm ALD-grown Al₂O₃ capping layer on Ge:H (black), GeOₓ (3 Å)/Ge (red), and GeOₓ (5 Å)/Ge (blue) surfaces. The chemical shifts corresponding to different Ge oxidation states are indicated below the spectra.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Intensity (a.u.) | Oxidation State |\\n|---|---|---|\\n| 34 | 8.7 | +4 |\\n| 33 | 4.2 | +3 |\\n| 32 | 2.4 | +2 |\\n| 31 | 1.2 | +1 |\\n| 30 | 5.1 | 0 |\\n| 29 | 0.0 | 0 |\\n| 28 | 0.0 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Intensity (a.u.) | Oxidation State |\\n|---|---|---|\\n| 34 | 8.6 | +4 |\\n| 33 | 4.6 | +3 |\\n| 32 | 0.4 | +2 |\\n| 31 | 0.8 | +1 |\\n| 30 | 5.1 | 0 |\\n| 29 | 0.0 | 0 |\\n| 28 | 0.0 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All samples are capped with a 1 nm Al₂O₃ layer via ALD. This cap preserves the interface state during transfer and analysis, preventing further air exposure and oxidation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The H-terminated surface minimizes oxide growth; it shows almost no Ge¹⁺-Ge⁴⁺ states. The GeOₓ interlayer, while more stable, inherently contains and may promote further oxide formation during processing.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies the GeOₓ interlayers are very thin and/or non-uniform. The detectable elemental Ge (Ge⁰) from the substrate indicates the oxide is just a few atomic layers thick, which is desirable for a scalable gate stack.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Ge-H surface shows negligible sub-oxide states (Ge¹⁺-Ge³⁺), while the GeOₓ surfaces show significant amounts. Thicker initial GeOₓ (5Å) yields a higher Ge⁴⁺ fraction, indicating a more oxidized interface.\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_3.jpg","caption":"Figure 3. FTIR absorption spectra of $\\mathrm{SiO}_2$ (upper red plot) and $\\mathrm{Si}_3\\mathrm{N}_4$ (lower green plot) thin films both deposited by ALD at $>400^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_3","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":598,"height":489,"image_format":"jpeg","image_sha256":"07e6a1edd10bd0e082ee936cff7164617349a3cf124f94d5297251ab168afd38","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":595,"height":485}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays two infrared absorption spectra, one for Si-O-H and another for Si-NH-Si, with peaks at specific wavenumbers.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Functional Group | \\n|--------------------|-------------------|\\n| ~3700–3200 | Si–O–H |\\n| ~1100 | Si–O–Si | \\n| ~800 | Si–O–Si |\\n| ~930 | Si–N | \\n| ~3300–3400 | Si–NH–Si | \\n| ~1600–1650 | Si–NH–Si |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The incorporation of hydrogen in ALD of silicon nitride but not in ALD of silicon oxide suggests different surface chemistries during deposition\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"One of the marked differences between these spectra is the lack of bands associated with hydrogen (Si−O−H) in SiO2. In Si3N4, a peak assigned to NH stretching modes can be clearly observed at 3350 cm−1\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The following peaks identified at Wavenumber \\n1. 3700–3200 cm⁻¹ = Si–O–H \\n2. 1100 cm⁻¹ = Si–O–Si \\n3. 800 cm⁻¹ = Si–O–Si \\n4. 930 cm⁻¹ = Si–N \\n5. 3300–3400 cm⁻¹ = Si–NH–Si \\n6. 1600–1650 cm⁻¹ = Si–NH–Si\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_11_figure_6.jpg","caption":"Figure 6. Difference infrared spectra for three consecutive exposures of (a) Hacac and (b) $\\mathrm{O}_2$ plasma on $\\mathrm{ZnO}$ powder at $150^{\\circ}\\mathrm{C}$ . The reference spectrum for the Hacac doses was the bare $\\mathrm{ZnO}$ powder. For the $\\mathrm{O}_2$ plasma pulses, the spectra were referenced to the preceding Hacac exposure (third Hacac dose); therefore, the removal of species shows up as negative peaks. The spectrum baselines have been equally shifted for clarity. (c) Difference spectrum between the third Hacac dose and the $15\\mathrm{min}\\mathrm{O}_2$ plasma exposure, indicating the presence of residual acac species on the $\\mathrm{ZnO}$ surface. Peak assignment, after ref 47: 1 $\\nu (\\mathrm{C} = \\mathrm{O})$ ; 2 $\\nu (\\mathrm{C} = \\mathrm{C}) + \\nu (\\mathrm{C} = \\mathrm{O})$ , $\\nu (\\mathrm{C} = \\mathrm{O}) + \\delta (\\mathrm{C} = \\mathrm{H})$ ; 3 $\\delta (\\mathrm{C} = \\mathrm{H}) + \\delta (\\mathrm{CH}_3)$ ; 4 $\\nu (\\mathrm{C} = \\mathrm{C}) + \\nu (\\mathrm{C} = \\mathrm{CH}_3)$ ; 5 $\\delta (\\mathrm{CH}_3)$ ; 6 $\\delta (\\mathrm{C} - \\mathrm{CH}_3) + \\nu (\\mathrm{C} = \\mathrm{O})$ , where $\\nu$ and $\\delta$ indicate stretching and bending, respectively.","id":"train/atomic-layer-etching/experimental-usecase/11/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/11/figure_6","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plasma.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":389,"height":623,"image_format":"jpeg","image_sha256":"cf0f8523d997c02fc63f6d2767ece0c3ca6240aaa86619676164eff28907a86d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"c","x":34,"y":374,"width":353,"height":172},{"panel_id":"b","x":47,"y":189,"width":339,"height":175},{"panel_id":"a","x":34,"y":3,"width":354,"height":177}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays absorbance spectra at various wavenumbers for different treatments with a being Hacac exposure on ZnO powder\"},{\"panel_id\":\"b\",\"text\":\"The figure shows absorbance spectra for different plasma treatment durations on ZnO powder\"},{\"panel_id\":\"c\",\"text\":\"The figure presents the difference spectrum between the third Hacac dose and 15-minute O₂ plasma treatment.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance |\\n|------------------|------------|\\n| 2000 | 0.001 |\\n| 1800 | 0.001 |\\n| 1600 | 0.001 |\\n| 1400 | 0.001 |\\n| 1200 | 0.001 |\\n| 1000 | 0.001 |\\n| 800 | 0.001 |\"},{\"panel_id\":\"b\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance |\\n|------------------|------------|\\n| 2000 | 0.001 |\\n| 1800 | 0.001 |\\n| 1600 | 0.001 |\\n| 1400 | 0.001 |\\n| 1200 | 0.001 |\\n| 1000 | 0.001 |\\n| 800 | 0.001 |\"},{\"panel_id\":\"c\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance |\\n|------------------|------------|\\n| 2000 | 0.001 |\\n| 1800 | 0.001 |\\n| 1600 | 0.001 |\\n| 1400 | 0.001 |\\n| 1200 | 0.001 |\\n| 1000 | 0.001 |\\n| 800 | 0.001 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1 ν(C=O); \\n2 ν(C=C) + ν(C=O), ν(C=O) + δ(C−H); \\n3 δ(C−H) + δ(CH3); \\n4 ν(C−C) + ν(C−CH3); \\n5 δ(CH3); 6 δ(C−CH3)+ ν(C=O)\\n where =, ν and δ indicate double bonds, stretching and bending, respectively.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the second half-reaction (B), acac groups and/or related carbonaceous inhibiting species are removed from the ZnO surface by the O2 plasma step as seen in b. Therefore, the role of the O2 plasma may be primarily to remove the carbonaceous inhibiting layer that is formed during the half-reaction A, thereby allowing etching in a cyclic fashion.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During this etching reaction, stable surface acac species build up on the ZnO surface. It can be speculated that acac-species binding in a chelate configuration (the two oxygen atoms of the same Hacac binding to the same Zn atom) can lead to the formation of volatile Zn(acac)2 upon further reaction with another Hacac molecule\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_28_fig_3.jpg","caption":"FIG. 3. (a) Al 2p XPS peak and (b) SIMS depth profiles of O, F, Al, AlO, and AlOF of $\\mathrm{Al}_2\\mathrm{O}_3$ surface after 60 s exposures using $\\mathrm{NF}_3$ at 10 W and $100^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/28/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/28/fig_3","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/Atomic layer etching of Al2O3 with NF3 plasma fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":672,"height":1008,"image_format":"jpeg","image_sha256":"bfd72f37d22a7048417455c3af1f3ee6800eadcf36c3502091424cba7ceb2359","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":102,"y":12,"width":570,"height":496},{"panel_id":"b","x":97,"y":528,"width":570,"height":474}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows Al 2p XPS spectra for reference and fluorination samples. After fluorination, new species (AlF3 and AlOFx) can be detected compared to reference (Al2O3).\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the SIMS depth profiles of O-, F-, Al-, AIO-, and AIOF- species as a function of sputter time.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Measurement | Assignment | Curve type | Peak: Binding energy [eV] | Peak: Intensity (a.u.) |\\n|---|---|---|---|---|\\n|Reference| Al2O3 | Envelope | 74.57 | 273 |\\n| Fluorination | Al2O3, AlOFx, AlF3 | Envelope | 74.98| 75 |\\n| Fluorination | Al2O3 |Component | 74.72 | 65 |\\n| Fluorination | AlOFx |Component | 75.76 | 38 |\\n| Fluorination | AlF3 |Component | 76.59 | 6 |\"},{\"panel_id\":\"b\",\"text\":\"| Sputter time (s) | Intensity (a.u): O- | Intensity (a.u): F- | Intensity (a.u): Al- | Intensity (a.u): AlO- | Intensity (a.u): AlOF- |\\n|---|---|---|---|---|---|\\n| 0 | 0 | 51 | 0 |0 | 0 |\\n| 5 | 52 | 34 | 3 | 40 | 2 |\\n| 10 | 52 | 12 | 3 |43 | 0 |\\n| 15 | 52 | 6| 3 | 43 | 0 |\\n| 20 | 52 | 5 | 3 | 43 | 0 |\\n| 25 | 52 | 3 | 3 | 43| 0 |\\n| 30 | 53 | 3 | 3 | 44 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Al 2p binding energy increases with increasing fluorine coordination of Al ( from Al₂O₃ to AlOFₓ to AlF₃). That means that fluorine withdraws electron density around Al more strongly, making Al more positively charged, which leads to the higher binding energy. Therefore, F is more electronegative.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Partial fluorination.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The AlOFₓ component between Al₂O₃ and AlF₃ on bonding energy axis. Because F is more electronegative than O, replacing some O neighbors with F withdraws more electron density from Al than in pure Al₂O₃, but less than in fully fluorinated AlF₃. As a result, the effective positive charge on Al (and thus the Al 2p binding energy) is intermediate between the oxide and the fluoride.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It looks more like a smooth change.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_33_fig_10.jpg","caption":"FIG. 10. High-resolution N1s spectra of TiN samples (a) before surface modification, (b) after surface modification, and (c) after surface modification followed by IR annealing.","id":"train/atomic-layer-etching/experimental-usecase/33/fig_10","sample_id":"atomic-layer-etching/experimental-usecase/33/fig_10","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/Atomic layer etching of titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":650,"height":917,"image_format":"jpeg","image_sha256":"5a07a232eeef6d3a8199dcfed96d849ab463452083aa194417d018f7f813ff97","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":1,"width":649,"height":912}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays three spectra charts labeled a, b, and c, each showing intensity against binding energy before modifaction, after modification, and after anneal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Intensity (a.u.) a |Intensity (a.u.) b |Intensity (a.u.) c |\\n|---|---|---|---|\\n| 390 | null |null|null|\\n| 395 | null |null|null|\\n| 396 | 2 |null|2|\\n| 397 | 3 |1|2|\\n| 398 | 2 |null|null|\\n| 399 | null |null|null|\\n| 400 | null |null|null|\\n| 405 | null |null|null|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It looks as if there is just N bonded in a single way, as the peak is nice symmetric around the peak position.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the modification of the TiN surface, part of the N bonds is shielded for the measurement procedure by chlorine species. By removing the chlorine with an anneal, TiN of the underlaying substrate is once again probed.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectrum after the anneal step shows a clear shoulder, which was not present before etching, so there has been a change.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No it is hard to do so.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_33_fig_9.jpg","caption":"FIG. 9. High-resolution Ti2p spectra of TiN samples (a) before surface modification, (b) after surface modification, and (c) after surface modification followed by IR annealing.","id":"train/atomic-layer-etching/experimental-usecase/33/fig_9","sample_id":"atomic-layer-etching/experimental-usecase/33/fig_9","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/Atomic layer etching of titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":639,"height":917,"image_format":"jpeg","image_sha256":"423583b565f137f73227de28c4b23cb6c81a80e909cc151885ab080f679c0140","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":4,"width":636,"height":914}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays three spectra charts labeled a, b, and c, each showing intensity against binding energy in electron volts at different stages in the ALE process.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Intensity (a.u.) a |Intensity (a.u.) a |Intensity (a.u.) a |\\n|---|---|---|---|\\n| 470 | -|-|-|\\n| 465 | Peak | Peak | Peak |\\n| 459 | Ti-O | Ti-O | Ti-O |\\n| 456 | Ti-N | Ti-N | Ti-N |\\n|450|-|-|-|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The red spectrum shows that especially the Ti-N peak is reduced after modification, so the step is selective for Ti-N and not for Ti-O.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The measurement is likely performed at the surface as there is quite some oxygen present, whereas in the bulk it should be lower.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The bond is active at 459 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The peak can be seen as a shoulder of the oxygen peak.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_39_fig3.jpg","caption":"FIG.3. Surfa XPS pects showing a) Nb3d, (b) O1s, (c) F1s spectra, and (d) Nb4s, Li1s, Mg2p. The spectra are shown for (top) original and (bottom) etched bulk MgO-doped LN over 50 ALE cycles consisting of a $40\\mathrm{sH}_2$ plasma exposure followed by a $40\\mathrm{s}$ $\\mathrm{SF}_6 / \\mathrm{Ar}$ exposure. The measured (dots) and fit spectra (lines) intensity are reported in arbitrary units (a.u.) against the binding energy on the x-axis. (e) Surface atomic concentration normalized by carbon atomic concentration from XPS spectra for each sample for untreated bulk LN, 1 cycle $\\mathsf{H}_{2}$ plasma exposure, 10 ALE cycles, and 50 ALE cycles.","id":"train/atomic-layer-etching/experimental-usecase/39/fig3","sample_id":"atomic-layer-etching/experimental-usecase/39/fig3","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"},{"panel_id":"d","label":"stacked spectra chart"},{"panel_id":"e","label":"stacked bar chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/images/fig3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/images/fig3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/Isotropic atomic layer etching of MgO-doped lithium niobate.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":1420,"height":770,"image_format":"jpeg","image_sha256":"a5064386c408fe8bce3d69282235a25d67bf8e41381aa1f132f583f14ad8f956","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":95,"y":19,"width":325,"height":338},{"panel_id":"b","x":451,"y":24,"width":299,"height":331},{"panel_id":"c","x":92,"y":395,"width":333,"height":331},{"panel_id":"d","x":454,"y":397,"width":306,"height":335},{"panel_id":"e","x":454,"y":397,"width":306,"height":335}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Stacked Nb 3d XPS spectra comparing original and 50-cycle ALE-etched MgO-doped LN surfaces.\"},{\"panel_id\":\"b\",\"text\":\"Stacked O 1s XPS spectra showing O–LN and O–C components for original and etched samples.\"},{\"panel_id\":\"c\",\"text\":\"Stacked F 1s XPS spectra indicating the absence of fluorine in the original sample and its appearance after 50 ALE cycles.\"},{\"panel_id\":\"d\",\"text\":\"Stacked XPS spectra of Nb 4s, Li 1s, and Mg 2p regions comparing original and etched MgO-doped LN.\"},{\"panel_id\":\"e\",\"text\":\"Stacked bar chart showing surface atomic concentrations of Nb, O, Li, F, and Mg for untreated LN, 1 cycle H₂ plasma exposure, 10 ALE cycles, and 50 ALE cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Plot | Component | Binding Energy (eV) |\\n|-----------|-----------|---------------------|\\n| Original | Nb3d | ~208–209, ~210–211 |\\n| Etched | Nb3d | ~208–209, ~210–211 |\"},{\"panel_id\":\"b\",\"text\":\"| Plot | Component | Binding Energy (eV) | \\n|------|-----------|---------------------| \\n| Original | O-LN | ~532.5 | \\n| Original | O-C | ~531.0 | \\n| Etched | O-LN | ~532.5 | \\n| Etched | O-C | ~531.0 |\"},{\"panel_id\":\"c\",\"text\":\"| Plot | Component | Binding Energy (eV) |\\n|------|-----------|----------|\\n| Original | F-LN | Absent/near baseline |\\n| Original | F-C | Absent/near baseline |\\n| Etched | F-LN | Present (~685.5 eV) |\\n| Etched | F-C | Present (~687.5 eV) |\"},{\"panel_id\":\"d\",\"text\":\"| Plot | Component | Binding Energy (eV) | \\n|------|-----------|---------------------| \\n| Original | Mg 2p | ~60.5 | \\n| Original | Nb 4s | ~55.5 | \\n| Original | Li 1s | ~50.5 | \\n| Etched | Mg 2p | ~61.0 | \\n| Etched | Nb 4s | ~55.5 | \\n| Etched | Li 1s | ~52.0 |\"},{\"panel_id\":\"e\",\"text\":\"| Sample | Nb (%) | O (%) | Li (%) | F (%) | Mg (%) |\\n|--------|--------|-------|--------|-------|--------|\\n| Untreated | ~20 | ~60 | ~15 | ~<1 | ~1 |\\n| 1 cyc. H2 plasma | ~18 | ~52 | 25 | ~7 | <2 |\\n| 10 cyc. ALE | ~19 | ~52 | 22 | 6 | <2 |\\n| 50 cyc. ALE | ~20 | 55 | 16 | 6 | <2 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Fluorine (F) shows the largest increase, rising from approximately 5% to 12%.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The stacked bar chart shows that oxygen concentration decreases from the untreated condition to the ALE-processed samples, while fluorine concentration increases after ALE treatment. This inverse trend is visible as the appearance and persistence of fluorine in the ALE samples alongside a reduced oxygen fraction. The data indicate a surface compositional change associated with ALE cycling, as directly shown by the XPS-derived concentrations.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The two components identified are O-LN and O-C.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_40_fig4.jpg","caption":"FIG.4. Surace XPS spect shwng a) Ti2p, b) N1s, (c) O1s, and (d) F1s spectra. The spectra are shown for (top) original and (bottom) etched Ti films. The measured (gray dots) and fit spectra (black lines) intensities are reported in arbitrary units (a.u.) against the binding energy on the $x$ axis. The $y$ axis scale is identical between panels within each subfigure.","id":"train/atomic-layer-etching/experimental-usecase/40/fig4","sample_id":"atomic-layer-etching/experimental-usecase/40/fig4","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"},{"panel_id":"d","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/Isotropic plasma-thermal atomic layer etching of.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":1414,"height":1092,"image_format":"jpeg","image_sha256":"4e3182b3ece7c01d4f452889d4547a33d532183ffb678ed8369046f32ff380cb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":27,"y":38,"width":670,"height":510},{"panel_id":"b","x":733,"y":37,"width":669,"height":509},{"panel_id":"c","x":29,"y":587,"width":650,"height":495},{"panel_id":"d","x":724,"y":587,"width":665,"height":495}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The Ti 2p XPS spectra compare original (top) and ALE-treated (bottom) TiN films. Five deconvoluted components are shown: Ti-N, Ti-ON, Ti-O, Ti-F, and Ti-C. After ALE, the Ti-N component increases while oxide-related peaks decrease, indicating reduced surface oxidation.\"},{\"panel_id\":\"b\",\"text\":\"The N 1s XPS spectra show N-Ti (~397 eV) and N-O (~399 eV) components for original (top) and ALE-treated (bottom) films. The dominant N-Ti peak increases slightly after ALE treatment.\"},{\"panel_id\":\"c\",\"text\":\"The O 1s XPS spectra display O-Ti and O-N components. After ALE (bottom), the overall oxygen signal decreases, indicating reduced native oxide concentration on the surface.\"},{\"panel_id\":\"d\",\"text\":\"The F 1s XPS spectra show F-C (~690 eV) and F-Ti (~685 eV) components. The ALE-treated film (bottom) exhibits increased fluorine signal compared to the original (top), consistent with fluorine incorporation from the SF6/H2 plasma step.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy, eV | Component | Original | After ALE |\\n|---|---|---|---|\\n| 455 | Ti-N | 0.70 | 0.55 |\\n| 458 | Ti-ON | 1.00 | 0.85 |\\n| 460 | Ti-O | 0.45 | 0.55 |\\n| 462 | Ti-F | 0.25 | 0.40 |\\n| 454 | Ti-C | 0.10 | 0.15 |\\n| 464 | Ti-N (2p₁/₂) | 0.55 | 0.45 |\\n| 466 | Ti-ON (2p₁/₂) | 0.35 | 0.30 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy, eV | Component | Original | After ALE |\\n|---|---|---|---|\\n| 397 | N-Ti | 1.00 | 0.75 |\\n| 399 | N-O | 0.15 | 0.35 |\"},{\"panel_id\":\"c\",\"text\":\"| Binding Energy, eV | Component | Original | After ALE |\\n|---|---|---|---|\\n| 530 | O-Ti | 0.55 | 0.45 |\\n| 532 | O-N | 1.00 | 1.00 |\"},{\"panel_id\":\"d\",\"text\":\"| Binding Energy, eV | Component | Original | After ALE |\\n|---|---|---|---|\\n| 685 | F-Ti | 0.45 | 1.00 |\\n| 689 | F-C | 1.00 | 0.55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ti-N, Ti-ON (titanium oxynitride), Ti-O, Ti-F, Ti-C\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The O 1s XPS spectra show a clear decrease in signal intensity after ALE treatment. Both the O-Ti and O-N components remain present but with reduced magnitude compared to the original film. This reduction indicates that the ALE process effectively removes a portion of the native oxide layer that forms on TiN surfaces. According to the paper, this corresponds to a 49% decrease in surface oxygen concentration, which is significant for applications where surface oxides degrade device performance.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increased F 1s signal after ALE indicates fluorine incorporation at the TiN surface during the SF6/H2 plasma exposure step. Two fluorine species are identified: F-Ti bonds (~685 eV) from direct fluorination of titanium, and F-C bonds (~690 eV) likely from carbon contamination reactions. This fluorinated surface layer may act as a diffusion barrier against subsequent reoxidation when the film is exposed to atmosphere, potentially explaining the lower resistivity observed in ALE-treated films even after aging.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The gray dots represent measured experimental data points, and the black lines represent the fitted spectra from peak deconvolution analysis.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_8_figure_2.jpg","caption":"Figure 2. Raman spectra of one monolayer of $\\mathrm{MoS}_2$ before and after the exposure to the Cl plasma for the Cl-radical-adsorption step up to $10\\mathrm{min}$ . No change in the Raman spectra of the $\\mathrm{MoS}_2$ was observed, even after a $10\\mathrm{min}$ exposure.","id":"train/atomic-layer-etching/experimental-usecase/8/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/8/figure_2","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/Controlled Layer-by-Layer Etching of MoS2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":564,"height":436,"image_format":"jpeg","image_sha256":"7a93c4714b9decab93d605f0192f299d3647f1a6ea26982bb64085a301558a16","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":5,"width":561,"height":431}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows Raman spectra of monolayer MoS₂ under different conditions: pristine state and after Cl adsorption for 2 minutes and 10 minutes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Raman Shift (cm⁻¹) |\\n|---|---|\\n| Pristine | Peaks at 385, 405 |\\n| Cl adsorption 2min | Peaks at 385, 405 |\\n| Cl adsorption 10min | Peaks at 385, 405 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10 mTorr.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"18 W.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"63 sccm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Compared to the pristine MoS2 surface, the exposure to Cl2 plasma did not affect the peak positions and had a negligible affect on the intensity. The width of the Raman peaks of the monolayer MoS2 that was measured after the Cl-radical exposures of 2 and 10 min was not changed; therefore, the Cl exposure did not etch the monolayer MoS2.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_8_figure_3.jpg","caption":"Figure 3. (a) Raman spectra of one monolayer $\\mathrm{MoS}_2$ exposed to different $\\mathrm{Ar^{+}}$ ion energies for $2\\mathrm{min}$ by changing the first grid voltages of the ICP ion gun. For $+10\\mathrm{V}$ of the first grid voltage, $10\\mathrm{min}$ exposure to the $\\mathrm{Ar^{+}}$ ion beam is also included. (b) $\\mathrm{Ar^{+}}$ ion energy distribution for $+10\\mathrm{V}$ to $+70\\mathrm{V}$ of the first grid voltage measured using a quadruple mass spectrometer with an ion energy analyzer. For the $\\mathrm{Ar^{+}}$ ICP ion gun operation, $70\\mathrm{scm}$ of $\\mathrm{Ar}$ and $13.56\\mathrm{MHz}$ $200\\mathrm{W}$ rf power were applied to the ICP source. \"X5\" means that the actual ion-energy distribution of $+10\\mathrm{V}$ is $5$ times smaller than that shown in the figure.","id":"train/atomic-layer-etching/experimental-usecase/8/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/8/figure_3","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/Controlled Layer-by-Layer Etching of MoS2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":584,"height":861,"image_format":"jpeg","image_sha256":"469f616ef80075c79f6b7ac0a6cc8970de4d0d5fe468cc64900db58d165fcb79","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":37,"y":3,"width":545,"height":418},{"panel_id":"b","x":3,"y":433,"width":576,"height":426}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows Raman spectra of a pristine MoS2 layer compared to the MoS2 layer after exposure to Ar+ ions at different grid voltages.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays the Ion Energy Distribution Function (IEDF) for Ar+ at different ion energies.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Raman Shift (cm⁻¹) |\\n|---|---|\\n| Pristine | Peaks at 385, 405 |\\n| 1st-70V 2 min | |\\n| 1st-50V 2 min | |\\n| 1st-30V 2 min | |\\n| 1st-10V 10 min | Peaks at 385, 405 |\\n| 1st-10V 2 min | Peaks at 385, 405 |\"},{\"panel_id\":\"b\",\"text\":\"| Sample | Ion Energy (eV) |\\n|---|---|\\n| 10V | Peak at 20 |\\n| 30V | Peak at 20 |\\n| 50V | Peak at 50 |\\n| 70V | Peak at 70 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10, 30, 50 and 70 V.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"When the MoS2 was exposed to the Ar+ ion source for 2 min with a grid voltage higher than +30 V, no Raman peaks were observed, indicating that the MoS2 was removed. However, when the MoS2 was exposed to the Ar+ ion beam using a grid voltage of +10 V for 2 and 10 min, no change was observed. This indicates that there was no change to the MoS2 material when +10 V was used to accelerate the Ar+ ion beam.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"70 sccm\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At low voltages, the energy distribution is broad and the overall intensity is low. At higher voltages, the distribution becomes more narrow and the intensity increases.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_8_figure_4.jpg","caption":"Figure 4. Raman spectra of pristine $\\mathrm{MoS}_2$ monolayer, after $\\mathrm{Cl}_2$ adsorption for $2\\mathrm{min}$ , and after $\\mathrm{Ar^{+}}$ ion desorption for $2\\mathrm{min}$ , sequentially, resulting in the etching of one monolayer of $\\mathrm{MoS}_2$ .","id":"train/atomic-layer-etching/experimental-usecase/8/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/8/figure_4","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/Controlled Layer-by-Layer Etching of MoS2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":556,"height":439,"image_format":"jpeg","image_sha256":"031f42aac3c7661193cad17cd2a01c43d1da53afad36e0cb5c34959fee6a4513","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":2,"width":554,"height":435}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows Raman spectra of monolayer MoS2 under different conditions: pristine state, after Cl adsorption, and after Ar desorption.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Raman Shift (cm⁻¹) |\\n|---|---|\\n| Pristine | Peaks at 385, 405 |\\n| Cl adsorption 2min | Peaks at 385, 405 |\\n| Ar desorption 2min | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 minutes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 minutes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10 V.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No change was detected in the peak width between the pristine and Cl-exposed steps; however, when the Cl-modified MoS2 was exposed to the Ar+ ion-desorption step, no peaks were detected, indicating that the monolayer MoS2 was completely removed. It is therefore expected that during the Cl-adsorption step, the MoS2 binding energy is weakened by chlorine adsorbing onto the MoS2 and is then removed during the desorption step by the controlled Ar+ ion energy.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_8_figure_5.jpg","caption":"Figure 5. Raman spectra of trilayer $\\mathrm{MoS}_2$ after each step of ALET for three cycles: (a) Raman spectra of $\\mathrm{MoS}_2$ during each step of ALET; (b) change of the gap distance between $\\mathrm{E}_{12}^{1}$ and $\\mathrm{A_{1g}}$ of the $\\mathrm{MoS}_2$ Raman spectra during each step of the three ALET cycles.","id":"train/atomic-layer-etching/experimental-usecase/8/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/8/figure_5","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"reaction energy profile diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/Controlled Layer-by-Layer Etching of MoS2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":533,"height":806,"image_format":"jpeg","image_sha256":"13855215c8ce4891ea31a00e7494b71ade243398ecdc1d28aa3a93a299de42f0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":4,"width":528,"height":393},{"panel_id":"b","x":2,"y":402,"width":530,"height":400}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows Raman spectra of trilayer MoS₂ at various stages of chemical and argon treatments, highlighting changes in peak intensities and shifts.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the change in gap distance between layers of MoS₂ during different experimental steps, showing a decreasing trend.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Raman Shift (cm⁻¹) |\\n|---|---|\\n| Pristine (Trilayer) | Peaks at 385, 405 |\\n| 1st Cl | Peaks at 385, 405 |\\n| 1st Ar | Peaks at 385, 405 |\\n| 2nd Cl (Bilayer) | Peaks at 385, 405 |\\n| 2nd Ar | Peaks at 385, 405 |\\n| 3rd Cl (Monolayer) | Peaks at 385, 405 |\\n| 3rd Ar (Substrate) | |\"},{\"panel_id\":\"b\",\"text\":\"| Experiment Step | Gap Distance (cm⁻¹) |\\n|---|---|\\n| 1step | 23.5 |\\n| 2step | 22.0 |\\n| 3step | 22.0 |\\n| 4step | 21.0 |\\n| 5step | 21.0 |\\n| 6step | 20.5 |\\n| 7step | 20.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As more ALET cycles were completed, the peaks decreased in intensity and moved slightly closer together.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 0.5 for the third step vs. 1.5 for the first two steps.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It changed from about 23.5 to 20.5, so 3 in total.\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_8_figure_7.jpg","caption":"Figure 7. Narrow-scan XPS data of (a) Mo 3d, (b) S 2p, and (c) Cl 2p that were measured during each step of the three ALET cycles for the trilayer $\\mathrm{MoS}_2$ .","id":"train/atomic-layer-etching/experimental-usecase/8/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/8/figure_7","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/Controlled Layer-by-Layer Etching of MoS2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":425,"height":1055,"image_format":"jpeg","image_sha256":"db4c136d064c3d585d00046ce9730f3782690a6e59aaeebf898ba8656edd4a36","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":422,"height":345},{"panel_id":"b","x":0,"y":349,"width":416,"height":352},{"panel_id":"c","x":5,"y":720,"width":411,"height":332}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the XPS data of the Mo 3d region for six different samples.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the XPS data of the S 2p region for six different samples\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the XPS data of the Cl 2p region for six different samples\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Binding Energy (eV) |\\n|---|---| \\n| Pristine | Peaks at 230, 233 |\\n| 1st cycle | Peaks at 230, 233 | \\n| 2nd Cl | Peaks at 230, 233 |\\n| 2nd Ar | Peaks at 230, 233 |\\n| 3rd Cl | Peaks at 230, 233, 236 |\\n| 3rd Ar | Peaks at 233, 236 |\"},{\"panel_id\":\"b\",\"text\":\"| Sample | Binding Energy (eV) |\\n|---|---| \\n| Pristine | Peaks at 162, 164 |\\n| 1st cycle | Peaks at 162, 164 | \\n| 2nd Cl | Peaks at 162, 164 |\\n| 2nd Ar | Peaks at 162, 164 |\\n| 3rd Cl | Peaks at 162, 164 |\\n| 3rd Ar | |\"},{\"panel_id\":\"c\",\"text\":\"| Sample | Binding Energy (eV) |\\n|---|---| \\n| Pristine | |\\n| 1st cycle | | \\n| 2nd Cl | Peaks at 202, 200 |\\n| 2nd Ar | |\\n| 3rd Cl | Peaks at 202, 200 |\\n| 3rd Ar | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 229.5 and 232.6 eV.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The typical Mo 3d peaks were observed after the third Cl-adsorption step; but after the third desorption step, these peaks were removed and distorted. The authors believe that the remaining peak of Mo after the third Ar+ ion-desorption step is related to the diffusion of the Mo into the SiO2 or the oxidized Mo particle on the SiO2, because the peak positions of the remaining Mo after the third Ar+ ion-desorption step are exactly matched with those of the Mo 3d3/2 (236.3 eV) and Mo 3d5/2 (232.6 eV) that are related to MoO3.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At162.3 and 165.6 eV.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The fact that no signal is observed in the Cl 2p region after Ar+ exposure means all Cl is successfully removed during that step.\"}]}]"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_12_fig_4.jpg","caption":"Fig. 4. FTIR difference spectra recorded versus $\\mathrm{WF}_6$ exposure during the $\\mathrm{WF}_6$ half-reaction at $425\\mathrm{K}$ . Each spectrum is referenced to the initial surface that had received a saturation $\\mathrm{Si}_2\\mathrm{H}_6$ exposure.","id":"train/atomic-layer-deposition/experimental-usecase/12/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/12/fig_4","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows FTIR difference spectra for the tungsten hexafluoride (WF₆) half-reaction at 425 K, referenced to a surface initially saturated with disilane (Si₂H₆). In this label, negative absorbance features in the Si–H stretch region (approximately 2000–2500 cm⁻¹) indicate the removal of surface Si–H species.\"},{\"panel_id\":\"b\",\"text\":\"The FIR spectra shows positive IR absorbance in the W–F stretch region (approximately 600–720 cm⁻¹) confirms the formation of tungsten fluoride species. As the WF₆ exposure pressure increases from 10 to 250 mTorr, the exchange reaction that consumes and forms W–F bonds becomes progressively stronger.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Frequency (cm⁻¹) | Infrared Absorbance | Pressure |\\n|----------------|-----------------------|---------|\\n| 2500 | ~0.04 | 10 mTorr, 1 min |\\n| 2500 | ~0.009 | 50 mTorr, 1 min |\\n| 2500 | ~-0.03 | 250 mTorr, 1 min |\\n| 2250 | ~0.03 | 10 mTorr, 1 min |\\n| 2250 | ~0.007 | 50 mTorr, 1 min |\\n| 2250 | ~-0.03 | 250 mTorr, 1 min |\\n| 2000 | ~0.04 | 10 mTorr, 1 min |\\n| 2000 | ~0.009 | 50 mTorr, 1 min |\\n| 2000 | ~-0.03 | 250 mTorr, 1 min |\"},{\"panel_id\":\"b\",\"text\":\"| Frequency (cm⁻¹) | Infrared Absorbance | Pressure |\\n|----------------|----------------------|---------|\\n| 720 | ~0.03 | 10 mTorr, 1 min |\\n| 720 | ~-1.79 | 50 mTorr, 1 min |\\n| 720 | ~-0.05 | 250 mTorr, 1 min |\\n| 660 | ~-0.04 | 10 mTorr, 1 min |\\n| 660 | ~-0.02 | 50 mTorr, 1 min |\\n| 660 | ~-0.009 | 250 mTorr, 1 min |\\n| 600 | ~0.03 | 10 mTorr, 1 min |\\n| 600 | ~0.007 | 50 mTorr, 1 min |\\n| 600 | ~-0.03 | 250 mTorr, 1 min |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, 10 mTorr is not sufficient; the 250 mTorr route is preferable to ensure saturation despite higher waste.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The prominent W-F peak indicates that the deposited tungsten layer is heavily fluorinated. If these fluorine atoms are not fully removed in the subsequent silane half-cycle, they will incorporate as impurities. High fluorine content in tungsten films typically leads to increased resistivity and can cause adhesion failure due to chemical attack on underlying layers (like SiO2).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Exposure of the Si2H6-terminated surface to WF₆ gas.\\n\\nConsumption and removal of surface Si–H bonds, shown by negative peaks at about 2000–2500 cm⁻¹.\\n\\nFormation and deposition of W–F species on the surface, shown by positive peaks at about 600–730 cm⁻¹.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 250 mTorr spectrum shows the deepest negative dip for Si-H and the highest positive peak for W-F, indicating a more complete reaction. This suggests that the reaction is transport-limited or kinetically limited at lower pressures (10 mTorr), requiring higher driving force (pressure) to maximize surface coverage and ligand exchange.\"}]}]","bbox":[{"panel_id":"b","x":322,"y":3,"width":197,"height":692},{"panel_id":"a","x":2,"y":0,"width":329,"height":696}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/J.W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":522,"height":697,"image_format":"jpeg","image_sha256":"7e5d82391087363560bb35baf95ff24d4a5a939ae07f20c13d134ee6259d15fd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_12_fig_6.jpg","caption":"Fig. 6. FTIR difference spectra recorded versus $\\mathrm{Si}_2\\mathrm{H}_6$ exposure during the $\\mathrm{Si}_2\\mathrm{H}_6$ half-reaction at $425~\\mathrm{K}$ . Each spectrum is referenced to the initial surface that had received a saturation $\\mathrm{WF}_6$ exposure.","id":"train/atomic-layer-deposition/experimental-usecase/12/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/12/fig_6","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows FTIR difference spectra for the disilane (Si₂H₆) half-reaction at 425 K, referenced to a WF₆-saturated surface. In this label, positive IR absorbance in the Si–H stretch region (approximately 2100–2250 cm⁻¹) confirms the deposition of silicon hydride species. As the Si₂H₆ exposure pressure increases from 10 to 100 mTorr.\"},{\"panel_id\":\"b\",\"text\":\"The FTIR spectra shows negative IR absorbance in the W–F stretch region (approximately 600–750 cm⁻¹), the exposure pressure increases from 10 to 100 mTorr.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Frequency (cm⁻¹) | Infrared Absorbance | Pressure |\\n|----------------|----------------------|-------|\\n| 2500 | 0.03 | 10 mTorr, 1 min |\\n| 2500 | -0.01 | 40 mTorr, 1 min |\\n| 2500 | -0.07 | 100 mTorr, 2 min |\\n| 2250 | 0.04 | 10 mTorr, 1 min |\\n| 2250 | -0.008 | 40 mTorr, 1 min |\\n| 2250 | -0.07 | 100 mTorr, 2 min |\\n| 2000 | 0.04 | 10 mTorr, 1 min |\\n| 2000 | -0.01 | 40 mTorr, 1 min |\\n| 2000 | -0.07 | 100 mTorr, 2 min |\\n| 720 | 0 | 10 mTorr, 1 min |\\n| 720 | 0 | 40 mTorr, 1 min |\\n| 720 | 0 | 100 mTorr, 2 min |\\n| 660 | 0 | 10 mTorr, 1 min |\\n| 660 | 0 | 40 mTorr, 1 min |\\n| 660 | 0 | 100 mTorr, 2 min |\\n| 600 | 0 | 10 mTorr, 1 min |\\n| 600 | 0 | 40 mTorr, 1 min |\\n| 600 | 0 | 100 mTorr, 2 min |\"},{\"panel_id\":\"b\",\"text\":\"| Frequency (cm⁻¹) | Infrared Absorbance |Pressure|\\n|----------------|----------------------|------|\\n| 2500 | 0 | 10 mTorr, 1 min |\\n| 2500 | 0 | 40 mTorr, 1 min |\\n| 2500 | 0 | 100 mTorr, 2 min |\\n| 2250 | 0 | 10 mTorr, 1 min |\\n| 2250 | 0 | 40 mTorr, 1 min |\\n| 2250 | 0 | 100 mTorr, 2 min |\\n| 2000 | 0 | 10 mTorr, 1 min |\\n| 2000 | 0 | 40 mTorr, 1 min |\\n| 2000 | 0 | 100 mTorr, 2 min |\\n| 720 | 0.04 | 10 mTorr, 1 min |\\n| 720 | 0.005 | 40 mTorr, 1 min |\\n| 720 | -0.04 | 100 mTorr, 2 min |\\n| 660 | 0.02 | 10 mTorr, 1 min |\\n| 660 | -0.02 | 40 mTorr, 1 min |\\n| 660 | -0.08 | 100 mTorr, 2 min |\\n| 600 | 0.04 | 10 mTorr, 1 min |\\n| 600 | -0.004 | 40 mTorr, 1 min |\\n| 600 | -0.06 | 100 mTorr, 2 min |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Create a W–F terminated surface via a saturation exposure to WF₆.\\n\\nObtain a reference FTIR spectrum of this initial W–F/Si–H–F surface.\\n\\nThe longer 2-minute exposure at 100 mTorr likely ensures the reaction reaches saturation or a specific extent for clearer spectroscopic analysis, differentiating kinetic from pressure-limited effects observed at shorter times.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thermal Si₂H₆ route is preferable. Plasma H*, while highly reactive, can cause surface damage via ion bombardment and may have poor conformality due to short radical lifetimes and recombination. The Si₂H₆ molecule provides a gentle, thermally activated source of hydrogen via its decomposition and ligand exchange, ensuring a self-limiting, isotropic surface reaction critical for uniform coverage in deep trenches without plasma-induced defect generation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing Si₂H₆ exposure reduces the surface fluorine bound to tungsten, converting W–F* species into W–H* or W–FₓHᵧ species. This is evidenced by the decreasing positive W–F stretch peak and the evolving features in the Si–H region. The mechanism is direct exchange: Si₂H₆ reacts with surface F to form volatile SiH₃F and leaves behind Si–H and W–H species, progressively fluorinating the silane and reducing the tungsten's fluorine coordination.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This implies the process is a robust ALD cycle with a well-defined growth per cycle (GPC). The completion of both self-limiting half-reactions is confirmed. However, the ligand-exchange mechanism incorporating silicon from Si₂H₆ suggests the deposited film will not be pure tungsten but rather a tungsten silicide (WSiₓ) or a silicon-containing tungsten alloy, which may be desirable for specific electronic properties but not for pure metallic W contacts.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":1,"width":289,"height":637},{"panel_id":"b","x":287,"y":0,"width":175,"height":633}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/12/J.W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":466,"height":636,"image_format":"jpeg","image_sha256":"89cb3777d4bada0ba685d9b4835906500b4e23c8e6550ba22dd7c87658ae0489","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_16_fig_6.jpg","caption":"FIG. 6. X-ray diffractograms of the films deposited with (a) $\\mathrm{Zr(Me_5Cp)(TEA) / O_3}$ at $250–425^{\\circ}\\mathrm{C}$ and (b) $\\mathrm{Zr(MeCp)TMEA) / H_2O}$ process at $250–375^{\\circ}\\mathrm{C}$ . Film thicknesses were in (a) $30–40\\mathrm{nm}$ and in (b) $50\\mathrm{nm}$ except at $375^{\\circ}\\mathrm{C}$ $43\\mathrm{nm}$ .","id":"train/atomic-layer-deposition/experimental-usecase/16/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/16/fig_6","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot shows XRD pattern for films deposited with Zr(Me₅Cp)(TEA) and ozone at temperatures from 250°C to 425°C, illustrating a temperature-dependent structure evolution.\"},{\"panel_id\":\"b\",\"text\":\"The plot shows XRD pattern for films deposited with Zr(MeCp)(TMEA) and water at temperatures from 250°C to 375°C, illustrating a temperature-dependent structure evolution.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature, °C | 2θ | Intensity (arb. units) | Assignment |\\n|---|---|---|---|\\n|250|30.46| 35| - |\\n|250|50.88| 18.29| - |\\n|275|30.53| 129| t(011) |\\n|275|35.51| 57| - |\\n|275|51.03| 57| t(112)/t(020) |\\n|275|60.43| 43| - |\\n|300|30.53| 428| t(011) |\\n|300|34.66| 41| - |\\n|300|35.52| 24| t(110) |\\n|300|50.60| 93| t(112)/t(020) |\\n|300|59.57| 24| t(013) |\\n|300|60.57| 34| t(121) |\\n|350|28.11| 180| m(-111) |\\n|350|30.53| 440| t(011) |\\n|350|34.52| 91| t(002) |\\n|350|50.46| 120| t(112)/t(020) |\\n|350|59.72| 40| t(013) |\\n|350|60.28| 29| t(121) |\\n|375|28.11| 120| m(-111) |\\n|375|30.53| 248| t(011) |\\n|375|34.52| 37| t(002) |\\n|375|50.04| 59| t(112)/t(020) |\\n|375|59.15| 15| t(013) |\\n|375|60.28| 13| t(121) |\\n|400|28.11| 170| m(-111) |\\n|400|30.53| 209| t(011) |\\n|400|34.52| 24| t(002) |\\n|400|50.04| 52| t(112)/t(020) |\\n|400|59.15| 12| t(013) |\\n|400|60.28| 9| t(121) |\\n|425|28.11| 131| m(-111) |\\n|425|30.53| 131| t(011) |\\n|425|31.39| 17| m(111) |\\n|425|34.38| 9| t(002) |\\n|425|40.93| 9| m(-112) |\\n|425|49.04| 9| m |\\n|425|50.18| 52| t(112)/t(020) |\\n|425|59.00| 12| t(013) |\\n|425|60.43| 9| t(121) |\"},{\"panel_id\":\"b\",\"text\":\"| Temperature, °C | 2θ | Intensity (arb. units) | Assignment |\\n|---|---|---|---|\\n|250|30.87| 52|- |\\n|300|30.17| 131| t(011) |\\n|300|35.33| 101| - |\\n|300|50.24| 68| t(112)/t(020) |\\n|300|59.86| 36| - |\\n|350|24.18| 21| m(011)/m( 110)|\\n|350|30.17| 302| t(011) |\\n|350|35.33| 123| t(110) |\\n|350|50.24| 107| t(112)/t(020) |\\n|350|60| 61| - |\\n|375|28.22| 23| m(-111) |\\n|375|30.45| 129| t(011) |\\n|375|34.63| 35| t(002) |\\n|375|35.47| 32| t(110) |\\n|375|42.9| 11| t(012) |\\n|375|50.52| 72| t(112)/t(020) |\\n|375|59.02| 25| t(013) |\\n|375|59.86| 28| t(121) |\\n|375|62.78| 10| t(022) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film is amorphous.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Tetragonal\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Monoclinic phase. Films deposited at 300 °C exhibit only tetragonal difraction peaks. The peaks characteristic for monoclinic phase appear only at temperatures above 350 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"t(011).\"}]}]","bbox":[{"panel_id":"a","x":60,"y":2,"width":609,"height":613},{"panel_id":"b","x":54,"y":638,"width":615,"height":551}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/Sanni Seppala et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":672,"height":1194,"image_format":"jpeg","image_sha256":"a0f42ab39a2795b36737c663cbcfc59aa55aca5026f741240a6065dc54f2beb6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_16_fig_7.jpg","caption":"Fig. 7. X-ray diffractograms of films with different thicknesses deposited with (a) $\\mathrm{Zr(Cp)(^tBuDAD)(O^iPr) / H_2O}$ process at $375^{\\circ}\\mathrm{C}$ and (b) $\\mathrm{Zr(Me_5Cp)(TEA) / O_3}$ process at $300^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/16/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/16/fig_7","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot shows X-ray diffraction patterns for Zr(Cp)(ᵗBuDAD)(OⁱPr) process with water for films of different thickness (9, 22, and 70 nm).\"},{\"panel_id\":\"b\",\"text\":\"The plot shows X-ray diffraction patterns for Zr(Me₅Cp)(TEA) process with ozone for films of different thickness (12, 29, and 60 nm).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Thickness, nm | 2θ | Intensity (arb. units) | Assignment |\\n|---|---|---|---|\\n| 9| 30.00 |35| t(001)|\\n| 9| 50.42 |35| t(020)|\\n|22| 30.00 |132| t(001)|\\n|22| 35.07 |7| t(002)/t(110)|\\n| 22| 50.42 |21| t(020)|\\n| 22|60.42 |7| t(013)/t(022)|\\n|70| 30.00 |410| t(001)|\\n|70| 35.07 |67| t(002)/t(110)|\\n| 70| 43.66 |11| t(012)|\\n| 70| 50.42 |86| t(020)|\\n| 70|60.42 |35| t(013)/t(022)|\\n| 70|63.66 |13| t(121|\"},{\"panel_id\":\"b\",\"text\":\"| Thickness, nm | 2θ | Intensity (arb. units) | Assignment |\\n|---|---|---|---|\\n| 12| 30.00 |453| t(011)|\\n| 12| 34.96 |35| t(002)/t(110)/m(200)|\\n| 12| 50.6 |94| t(112)/t(020)|\\n| 12| 59.3 |33| t(013)|\\n| 12| 60.27 |33| t(121)|\\n| 29| 30.00 |458| t(011)|\\n| 29| 34.96 |38| t(002)/t(110)/m(200)|\\n| 29| 50.6 |97| t(112)/t(020)|\\n| 29| 59.3 |29| t(013)|\\n| 29| 60.27 |38| t(121)|\\n| 60| 24.19 |40| m(011)/m(110)|\\n| 60| 28.11 |48| m(-111)|\\n| 60| 30.00 |460| t(011)|\\n| 60| 31.60 |120| m(111)|\\n| 60| 33.98 |51| m(200)|\\n| 60| 34.54 |151| t(002)|\\n| 60| 35.52 |142| t(110)|\\n| 60| 50.6 |168| t(112)/t(020)|\\n| 60| 53.7 |14| m(310)|\\n| 60| 55.66 |14| m(-311)|\\n| 60| 59.16 |51| t(013)|\\n| 60| 60.13 |60| t(121)|\\n| 60| 62.93 |11| t(022)|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"70 nm, 22 nm, 9 nm\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The peak for 70 nm is taller than for 9 nm. The intensity of X-ray diffraction peaks generally increases with the volume of crystalline material. A 70 nm film contains significantly more material to diffract the X-rays than a 9 nm film, resulting in taller peaks.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At the film thickness of 29 nm.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":649,"height":570},{"panel_id":"b","x":0,"y":580,"width":652,"height":605}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/16/Sanni Seppala et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":656,"height":1189,"image_format":"jpeg","image_sha256":"3829a4ac3a781207fd6445fa383838c4bfbb6ff4eafbd8e7bc25c101791d52ea","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_22_fig_4.jpg","caption":"Fig. 4. X-Ray diffractograms of LiF thin films deposited at various temperatures. Lithd and $\\mathrm{TiF_4}$ pulse lengths were $2\\mathrm{s}$ , and purge times between these pulses were $4\\mathrm{s}$ .","id":"train/atomic-layer-deposition/experimental-usecase/22/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/22/fig_4","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays X-ray diffraction patterns at various temperatures (350 °C, 325 °C, 300 °C, 275 °C, and 250 °C) showing peaks corresponding to specific crystal planes ( (111), (200), and (220) ).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2Θ | 350 °C | 325 °C | 300 °C | 275 °C | 250 °C |\\n| --- | --- | --- | --- | --- | --- |\\n| 25 | - | - | - | - | - |\\n| 30 | - | - | - | - | - |\\n| 35 | - | - | - | - | - |\\n| 40 | peak at ~38° | peak at ~38° | peak at ~38° | peak at ~38° | peak at ~38° |\\n| 45 | peak at ~45° | peak at ~45° | peak at ~45° | peak at ~45° | peak at ~45° |\\n| 50 | - | - | - | - | - |\\n| 55 | - | - | - | - | - |\\n| 60 | - | - | - | - | - |\\n| 65 | peak at ~66° | peak at ~66° | peak at ~66° | peak at ~66° | peak at ~66° |\\n| 70 | - | - | - | - | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The grazing incidence X-ray diffraction (GIXRD) of the deposited films has been studied.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The same LiF crystal planes ( (111), (200), and (220)) can be observed in the figure, with a slightly different intensity for the (220) plane at different temperatures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the temperature increases, intensity of the (200) plane increases too. The highest intensity is observed at 350 °C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No impurity phase has been observed for any of the temperatures studied.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":643,"height":477}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/22/Miia Mantymaki et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":650,"height":483,"image_format":"jpeg","image_sha256":"4bb82627dea30a1dfab37cdbdc0dac6f85597ca65807a1e501ba7768a659b764","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_25_figure_4.jpg","caption":"Figure 4. GI-XRD diffractograms of (a) TGO, and (b) ZGO films deposited on fused silica as a function of the cation ratio, $x$ .","id":"train/atomic-layer-deposition/experimental-usecase/25/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/25/figure_4","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows GI-XRD diffractograms, log intensity against 2θ for different values of x, cation ratio of Ge doped tin oxide TGO\"},{\"panel_id\":\"b\",\"text\":\"The figure shows GI-XRD diffractograms, log intensity against 2θ for different values of x, cation ratio of Ge doped Zinc oxide ZGO\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (°) | x = 1 | x = 0.30 | x = 0 |\\n|--------|-------|----------|-------|\\n| 30–35 | Broad | Broad | Broad |\\n| 40–45 | Broad | Broad | Broad |\\n| 50–55 | Broad | Broad | Broad |\\n| 60–65 | Broad | Broad | Broad |\\n| 70–75 | Broad | Broad | Broad |\"},{\"panel_id\":\"b\",\"text\":\"| 2θ (°) | x = 1 | x = 0.37 | x = 0.32 | x = 0.26 | x = 0.19 | x = 0.12 | x = 0.032 | x = 0 |\\n|--------|-------|----------|----------|----------|----------|----------|-----------|-------|\\n| ~31.8 | - | - | - | - | - | ✓ | ✓ | ✓ |\\n| ~34.4 | - | - | - | - | - | ✓ | ✓ | ✓ |\\n| ~36.2 | - | - | - | - | - | ✓ | ✓ | ✓ |\\n| ~47.5 | - | - | - | - | - | ✓ | ✓ | ✓ |\\n| ~56.6 | - | - | - | - | - | ✓ | ✓ | ✓ |\\n| ~62.8 | - | - | - | - | - | ✓ | ✓ | ✓ |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"From GI-XRD, the low-Ge content ZGO films had wurtzite ZnO peaks that gradually weakened as the amount of Ge was increased (b). Increasing the Ge content further gave X-ray amorphous films\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No. Fused silica.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"GeOy appears amorphous in grazing incidence X-ray diffraction (GI-XRD) diffractograms similar to GaOy and SnOy grown by ALD at the same temperature using metal−organic precursors with the same dimethylamine (DMA) ligand\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The GI-XRD diffractograms (a) showed an amorphous morphology for the SnOy and TGO 0.30 films. It is not surprising to see that TGO 0.3 was both resistive and X-ray amorphous, given that its growth consists of subcycles of SnOy and GeOy that also share these properties\"}]}]","bbox":[{"panel_id":"b","x":2,"y":366,"width":506,"height":341},{"panel_id":"a","x":0,"y":3,"width":504,"height":349}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/25/Adam Hultqvist et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":508,"height":706,"image_format":"jpeg","image_sha256":"71da586821e443fb9c40145c5b5dc7f9b6c07888f152da69af3b9efe968d11e1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_28_figure_6.jpg","caption":"Figure 6. XRR result (top) and AES analysis (bottom) for the films grown through (a), (c) the conventional ALD process and (b), (d) the ALD-DFM process.","id":"train/atomic-layer-deposition/experimental-usecase/28/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/28/figure_6","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"multi spectra chart"},{"panel_id":"d","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the intensity of a XRR signal as a function of Omega (°) for two sets of data: Experimented and Simulated, with a density of 3.268 g/cm^3.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the intensity of a XRR signal as a function of Omega (°) for two sets of data: Experimented and Simulated, with a density of 4.173 g/cm^3.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the atomic percent of various elements (C, O, Cl, Si, Ge, Se) as a function of sputtering time, for a sample grown with ordinary ALD.\"},{\"panel_id\":\"d\",\"text\":\"The figure shows the atomic percent of various elements (C, O, Cl, Si, Ge, Se) as a function of sputtering time, for a sample grown with the DFM-ALD method.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Omega (°) | Intensity (A.U.) |\\n|---|---|\\n| 0.0 | 0.6 |\\n| 0.5 | 0.5 |\\n| 1.0 | 0.4 |\\n| 1.5 | 0.4 |\\n| 2.0 | 0.4 |\"},{\"panel_id\":\"b\",\"text\":\"| Omega (°) | Intensity (A.U.) |\\n|---|---|\\n| 0.0 | 0.6 |\\n| 0.5 | 0.5 |\\n| 1.0 | 0.4 |\\n| 1.5 | 0.4 |\\n| 2.0 | 0.4 |\"},{\"panel_id\":\"c\",\"text\":\"| Sputtering Time (min) | Atomic Percent (%) C |Atomic Percent (%) O |Atomic Percent (%) Cl |Atomic Percent (%) Si |Atomic Percent (%) Ge |Atomic Percent (%) Se |\\n|---|---|---|---|---|---|---|\\n| 0 | 20|35|0|0|25|20|\\n| 1 | 10|30|0|0|26|26|\\n| 2 | 0|50|0|50|0|0|\\n| 3 | 0|50|0|50|0|0|\\n| 4 | 0|50|0|50|0|0|\\n| 5 | 0|50|0|50|0|0|\"},{\"panel_id\":\"d\",\"text\":\"| Sputtering Time (min) | Atomic Percent (%) C |Atomic Percent (%) O |Atomic Percent (%) Cl |Atomic Percent (%) Si |Atomic Percent (%) Ge |Atomic Percent (%) Se |\\n|---|---|---|---|---|---|---|\\n| 0 | 20|15|0|0|30|37|\\n| 1 | 7|7|0|0|43|43|\\n| 2 | 10|30|0|20|25|15|\\n| 3 | 0|50|0|50|0|0|\\n| 4 | 0|50|0|50|0|0|\\n| 5 | 0|50|0|50|0|0|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With the fitting of XRR data, the density, thickness, and roughness can be calculated.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"oxygen\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The oxygen can be diffusing from the SiO2 substrate or be incorporated due to exposure to ambient conditions.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems as if the Ge:Se ratio is not equal everywhere in the film. Initially there is more Se, but deeper in the film there is more Ge.\"}]}]","bbox":[{"panel_id":"a","x":30,"y":50,"width":304,"height":323},{"panel_id":"b","x":371,"y":53,"width":295,"height":312},{"panel_id":"c","x":2,"y":387,"width":339,"height":317},{"panel_id":"d","x":342,"y":387,"width":323,"height":317}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/28/Woohyun Kim et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":669,"height":706,"image_format":"jpeg","image_sha256":"815d915c338209f611a98f05f664453dff685ec0cc24feb53cd73d5918dfe005","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_30_figure_1.jpg","caption":"Figure 1. Grazing incidence $\\mathbf{X}$ -ray diffraction patterns of iron oxide films grown at 500 and $400^{\\circ}\\mathrm{C}$ from $\\mathrm{Fe(C_5H_5)_2}$ (top and middle panels, respectively) and at $375^{\\circ}C$ from $\\mathrm{CpFeC_5H_4CHN(CH_3)_2}$ (bottom panel), Miller indexes are given for the peaks positioned in accord with the values in powder diffraction files of magnetite. Also the cycle sequences applied and film thicknesses are given by labels. The thickness of films grown at $500^{\\circ}\\mathrm{C}$ was ca. $120–150\\mathrm{nm}$ while the exact thickness determination occurred complicated due to the enhanced roughness and development of voids between grains.","id":"train/atomic-layer-deposition/experimental-usecase/30/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/30/figure_1","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The spectra chart shows X-ray diffraction patterns of iron oxide films grown at 500 °C. Strong hematite (Fe₂O₃) peaks are observed, with additional weaker magnetite (Fe₃O₄) reflections, indicating mixed-phase crystallinity at higher growth temperature.\"},{\"panel_id\":\"b\",\"text\":\"The spectra chart shows X-ray diffraction patterns of iron oxide films grown at 400 °C. Both hematite and magnetite phases are present, with magnetite peaks becoming more pronounced compared to the higher-temperature case.\"},{\"panel_id\":\"c\",\"text\":\"The spectra chart shows X-ray diffraction patterns of iron oxide films grown at 375 °C. Magnetite-related peaks dominate the spectrum, while hematite reflections are weaker, indicating a phase shift toward magnetite at lower growth temperature.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (degree) | Relative intensity | Phase |\\n|-------------|--------------------|---------------------|\\n| ~24.2 | High | Fe₂O₃ (hematite) |\\n| ~33.2 | High | Fe₂O₃ (hematite) |\\n| ~35.6 | Medium | Fe₃O₄ (magnetite) |\\n| ~49.5 | Medium | Fe₂O₃ (hematite) |\\n| ~54.1 | Low | Fe₃O₄ (magnetite) |\\n| ~62.5 | Low | Fe₂O₃ (hematite) |\"},{\"panel_id\":\"b\",\"text\":\"| 2θ (degree) | Relative intensity | Phase |\\n|-------------|--------------------|---------------------|\\n| ~24.2 | Medium | Fe₂O₃ (hematite) |\\n| ~30.1 | Medium | Fe₃O₄ (magnetite) |\\n| ~33.2 | High | Fe₂O₃ (hematite) |\\n| ~35.4 | High | Fe₃O₄ (magnetite) |\\n| ~43.1 | Medium | Fe₃O₄ (magnetite) |\\n| ~57.9 | Low | Fe₃O₄ (magnetite) |\"},{\"panel_id\":\"c\",\"text\":\"| 2θ (degree) | Relative intensity | Phase |\\n|-------------|--------------------|---------------------|\\n| ~30.1 | Medium | Fe₃O₄ (magnetite) |\\n| ~33.2 | Medium | Fe₂O₃ (hematite) |\\n| ~35.4 | High | Fe₃O₄ (magnetite) |\\n| ~43.1 | Medium | Fe₃O₄ (magnetite) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The grazing incident X-ray diffraction spectra are presented as a function of the temperature for the as-deposited film and the film after annealing.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 500 °C\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The formation of hematite is favored at higher growth temperatures, whereas the formation of magnetite is favored at lower temperatures.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The number of peaks decreases and so does their height. This indicates that after the FGA step there is a decrease in crystalinity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both subfigure a and b show a similar spectrum as-deposited so the assumption is yes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the growth temperature increases, the spectra evolve from a magnetite-dominated pattern at 375 °C to increasingly complex hematite-rich patterns at 500 °C. Higher temperature enhances precursor decomposition and atomic mobility, enabling transformation toward thermodynamically stable phases and the development of multiple well-defined diffraction peaks.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The figure compares the as-deposited films to films after forming gas annealing (FGA). In the paper, FGA is used to induce (partial) reduction of Fe2O3 toward Fe3O4 (magnetite) and thereby modify the phase composition and magnetic behavior. The GIXRD comparison in panels (b) and (c) specifically illustrates that magnetite-like reflections become more prominent after this treatment, especially for films grown at lower temperature.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A central goal of the paper is to connect phase composition to magnetic properties of ALD-grown iron oxide and Mg-doped iron oxide films. Magnetite/maghemite-type phases are typically associated with much stronger ferri/ferromagnetic responses than hematite, so promoting their formation (via lower growth temperature and/or FGA) is relevant for achieving higher saturation magnetization and useful hysteresis at practical temperatures. The paper explicitly frames the temperature/annealing dependence of phase (as seen here by GIXRD) as a prerequisite for interpreting the magnetometry trends reported later.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 500 °C, the as-deposited film shows strong hematite (Fe₂O₃) peaks with minor magnetite (Fe₃O₄) presence. After FGA, hematite peaks diminish and magnetite peaks become more prominent, indicating reduction of Fe³⁺ to Fe²⁺ under a reducing atmosphere. At 400 °C, magnetite is already significant in the as-deposited state, and FGA further enhances its crystallinity. This demonstrates that higher temperatures favor hematite formation initially, while FGA promotes magnetite through oxygen removal.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Film thickness increases with temperature: ~72 nm at 375 °C, ~246 nm at 400 °C, and ~120–150 nm at 500 °C (though roughness complicates exact measurement at 500 °C). Phase trend: lower temperature (375 °C) favors magnetite dominance even as-deposited, while higher temperature (500 °C) initially forms hematite, requiring FGA for magnetite conversion. Thus, temperature influences both growth rate and oxidation state.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Magnetite (Fe₃O₄) is a mixed-valence iron oxide with high electrical conductivity and ferrimagnetic properties, making it suitable for spintronic and magnetic storage applications. Hematite (Fe₂O₃), in contrast, is an antiferromagnetic semiconductor with low conductivity, better suited for photocatalysis. Therefore, phase control directly determines functional properties.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Magnetite exhibits strong ferrimagnetism and high saturation magnetization, enabling efficient magnetic signal detection and storage. Hematite’s antiferromagnetic nature results in negligible net magnetization, making it unsuitable for magnetic sensing. Thus, process conditions that maximize magnetite formation (lower temperature or FGA treatment) enhance performance in magnetic devices\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The iron oxide films were grown at three different temperatures\\n1.500 °C\\n2. 400 °C\\n3. 375 °C\\nAnd using two different precursors, \\na. Fe(C5H5)2\\nb. CpFeC5H4CHN(CH3)2\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The films deposited from ferrocene at 500 °C were identified to consist entirely of stable α-Fe2O3 .\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ALD cycle consisted of: 1 s iron-precursor pulse, 0.5 s purge, 1 s ozone pulse, 0.5 s purge. For the top and middle panel, ferrocene was used. For the bottom panel, (dimethylamino)ferrocene was used.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The conditions differed in deposition temperature when the films were grown. These were 500 °C, 400 °C and 375 °C for the top, middle and bottom panel, respectively.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The top panel in which ferrocene was grown at 500 °C. Annealing these films did not lead to the formation of magnetite.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Hematite\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The FGA has no effect on the phase composition of the film. The diffraction peaks after FGA are nearly identical to those of the \\\"as-deposited\\\" film. The film grown at 500°C is therefore stucturally stable against reduciton at these conditions.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The diffraction angle 2θ (degrees).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"By performing a functional gas anneal. This creates magnetite peaks in the spectrum.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-FGA-treated spectra show sharper and more intense reflections.\\n-Magnetite peaks become more distinct after FGA.\\n-Background scattering is reduced in the annealed trace.\\n-Relative peak balance suggests post-deposition phase reordering.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In panel (b), the FGA trace includes labeled spinel-indexed reflections such as:\\n\\n220 at ~30.095°\\n\\n311 at ~35.423°\\n\\n400 at ~43.053°\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film is partially transformed from hematite to magnetite.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The \\\"as-deposited\\\" sample displays characteristic hematite (Fe2O3) peaks. The FGA sample is dominated by magnetite (Fe3O4). The hematite is therefore reduced to magnetite due to the hydrogen that is present in the forming gas annealing process. The reaction is 3 Fe2O3 + H2 -> 2 Fe3O4 + H2O.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the growth temperature decreases from 500 °C to 375 °C, the diffraction patterns show a shift from hematite-dominated peaks toward magnetite-dominated peaks. This shows a temperature-driven phase evolution in the iron oxide films.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Magnetite becomes dominant at 375 °C.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Different iron oxide phases exhibit distinct magnetic, electrical, and chemical properties. Hematite is more thermodynamically stable and suitable for high-temperature or photocatalytic applications, while magnetite offers higher electrical conductivity and magnetic responsiveness, which are valuable for sensing, spintronic, and catalytic applications. The ability to tune the phase through deposition temperature enables targeted optimization of film performance for specific technological uses.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems that there is just one, the 220 orientation, as the 440 is the same.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Magnetite (Fe₃O₄).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 500 °C (panel a), the film is hematite-dominant in the as-deposited state and remains qualitatively hematite-dominant after FGA. At 400 °C (panel b), the as-deposited film still shows hematite reflections, but after FGA the appearance of spinel-indexed peaks indicates partial conversion toward magnetite/maghemite. At 375 °C (panel c), the film already shows predominantly magnetite-like reflections in the as-deposited state, consistent with the authors’ conclusion that lower growth temperature favors oxygen-deficient/spinel iron oxide phases.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At relatively low temperature, 400 °C, the as-deposited films were also consisting of hematite, without recognizable reflections from other phases (b). However, these films could partially be reduced to Fe3O4 after forming gas annealing. Further, at even lower temperatures, at which the films were already grown from (dimethylaminomethyl)ferrocene, the reflections in GIXRD patterns could all be attributed to the magnetite phase (cl), although the contribution from maghemite cannot be excluded. It can also be noted that, when grown at 375◦C, the films revealed a strong reflection at 35.4–35.6◦, which\\nbecame slightly shifted to lower angles after annealing, implying the reduction of hematite upon annealing.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"500.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hematite (Fe₂O₃), Magnetite (Fe₃O₄)\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hematite (α-Fe₂O₃) at 500 °C, Hematite (α-Fe₂O₃) at 400 °C, Magnetite (Fe₃O₄), with possible maghemite contribution, at 375 °C\"}]}]","bbox":[{"panel_id":"a","x":0,"y":8,"width":499,"height":377},{"panel_id":"b","x":5,"y":390,"width":494,"height":379},{"panel_id":"c","x":3,"y":775,"width":496,"height":387}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/Kaupo Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":500,"height":1166,"image_format":"jpeg","image_sha256":"0a11d67225fc3848ff0824ec653ad62b1a31ced6c6cd0d65748c84da2ee540d9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_30_figure_2.jpg","caption":"Figure 2. Grazing incidence $\\textrm{X}$ -ray diffraction patterns of iron oxide (top panel) and iron oxide- magnesium oxide (middle bottom panels) films grown at $425^{\\circ}C$ from $\\mathrm{Fe(C_5H_5)(C_5H_4CHN)(CH_3)_2}$ in as-deposited and annealed (FGA) states. Miller indexes, growth cycle sequences, $\\mathrm{Mg}$ to Fe atomic ratios, and PDF card numbers are given by labels.","id":"train/atomic-layer-deposition/experimental-usecase/30/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/30/figure_2","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The graph shows the X-ray diffraction (XRD) patterns of iron oxide (Fe₂O₃, hematite) films grown at 425 °C from FeC₅H₄CHN(CH₃)₂, indicating the presence of crystalline hematite and magnetite phases. Grazing incidence X-ray diffraction (GIXRD) patterns were used to characterize these iron oxide films grown under the conditions.\"},{\"panel_id\":\"b\",\"text\":\"The graph shows the X-ray diffraction (XRD) patterns of iron oxide (Fe₂O₃, hematite) films grown at 400 °C from Fe(C₅H₅)₂, indicating the presence of crystalline hematite and magnetite phases.The thickness of film grown at this temperature was 264 nm\"},{\"panel_id\":\"c\",\"text\":\"The graph shows the X-ray diffraction (XRD) patterns of iron oxide (Fe₂O₃, hematite) films grown at 375 °C from CpFeC₅H₄CHN(CH₃)₂, revealing the presence of crystalline hematite and magnetite phases. thickness of ~76 nm was measured\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (degree) | Relative intensity | Phase |\\n|-------------|--------------------|----------------------|\\n| ~24.2 | Medium | Hematite (Fe₂O₃) |\\n| ~33.2 | High | Hematite (Fe₂O₃) |\\n| ~35.6 | Medium | Magnetite (Fe₃O₄) |\\n| ~40.8 | Low | Hematite (Fe₂O₃) |\\n| ~49.5 | Medium | Hematite (Fe₂O₃) |\\n| ~54.1 | Low | Magnetite (Fe₃O₄) |\"},{\"panel_id\":\"b\",\"text\":\"| 2θ (degree) | Relative intensity | Phase |\\n|-------------|--------------------|----------------------|\\n| ~24.2 | Medium | Hematite (Fe₂O₃) |\\n| ~33.2 | High | Hematite (Fe₂O₃) |\\n| ~35.6 | High | Magnetite (Fe₃O₄) |\\n| ~43.1 | Medium | Magnetite (Fe₃O₄) |\\n| ~49.5 | Medium | Hematite (Fe₂O₃) |\\n| ~54.1 | Medium | Magnetite (Fe₃O₄) |\"},{\"panel_id\":\"c\",\"text\":\"| 2θ (degree) | Relative intensity | Phase |\\n|-------------|--------------------|----------------------|\\n| ~30.1 | Medium | Magnetite (Fe₃O₄) |\\n| ~33.2 | Medium | Hematite (Fe₂O₃) |\\n| ~35.6 | High | Magnetite (Fe₃O₄) |\\n| ~43.1 | High | Magnetite (Fe₃O₄) |\\n| ~54.1 | Medium | Magnetite (Fe₃O₄) |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Mg:Fe ratio was evaluated in order to determine the phases present in the film.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The as-deposited film\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mg:Fe = 0.02\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that magnesium oxide does not grow that good on a different substrate than on iron oxide. By first depositing iron oxide, nucleation delays can be suppressed.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"H indicates reflections indexed to hematite (α-Fe₂O₃).\\n\\nM indicates reflections indexed to magnetite (Fe₃O₄).\\n\\nThe panel explicitly lists reference PDF card identifiers for hematite and magnetite used for indexing, supporting the phase assignment.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At Mg/Fe = 0, the as-deposited film is reported as fully hematite, while after FGA it is reported to convert to magnetite, with characteristic 311, 220, 400, and 422 reflections and a small shift between hematite(110) and magnetite(311). At Mg/Fe ≈ 0.02 (MgO:Fe₂O₃ = 3:100), the as-deposited film is reported as a hematite + magnetite mixture, and after FGA it is reported to become magnetite/maghemite. At higher Mg loading (Mg/Fe ≈ 0.23, 20 MgO cycles), there are no unambiguous hematite reflections at least after annealing, because peak locations shift toward magnetite/maghemite at lower 2θ.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mg incorporation stabilizes magnetite and reduces hematite content, leading to a structure with higher electrical conductivity and stronger ferrimagnetic behavior. Additionally, Mg may introduce lattice strain or defect sites that enhance catalytic activity. Thus, structural tuning through Mg doping directly influences magnetic, electronic, and catalytic properties.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mg-doped magnetite films exhibit improved magnetite crystallinity and reduced hematite content, resulting in higher saturation magnetization and lower electrical resistivity. These properties are critical for efficient spin transport and magnetic signal detection, making Mg-doped films superior for spintronic devices and magnetic sensors.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Application of three MgO growth cycles between each 100 Fe2O3 cycles, MgO:Fe2O3 cycle ratio 3:100, resulted in Mg:Fe atomic ratio of 0.02 by EDX.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Magnetite reflections coincide with those of maghemite. The formation of solid solutions of maghemite and magnetite is highly likely. For instance, in an earlier study devoted to a gas phase deposition of iron oxide, transition from maghemite to hematite was reported, occurring between 350 and 400◦C. In addition, if the stoichiometry of the films were close to that ofmagnesioferrite MgFe2O4, then some significant peaks would also overlap with those of magnetite. For instance, locations of strong 220, 311 and 400 reflections of both MgFe2O4 (PDF card 017- 0464)57 and magnetite are identical. Distinction between maghemite, magnetite and magnesioferrite phases may be possible by XRD, but remains complicated. However, the Mg/Fe atomic ratio measured here would not allow the formation of ternary phase as the major one but rather as a contributing additive.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As-deposited sample (shows a \\\"hump\\\" in the baseline at low angles).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Forming gas annealing transforms the lightly doped film from a mixed structure into the magnetite phase. Before annealing, though the structure is dominated by hematite, the peaks of both hematite and magnetite can be observed. After the annealing, the hematite peaks dissappear compeltely. This confirms the reduction of hematite during FGA.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing Mg content shifts the diffraction patterns from hematite-dominated to magnetite-dominated. At low Mg/Fe ratios, both phases coexist, while at higher Mg/Fe ratios magnetite becomes the dominant crystalline phase.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher MgO content reduces the clear presence of hematite and favors the formation of magnetite or maghemite.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The phase composition directly affects the magnetic and electronic properties of the films. Hematite is weakly magnetic, while magnetite and maghemite are ferrimagnetic and can improve magnetic performance. Controlling the MgO doping and annealing conditions allows tailoring of these properties for applications such as magnetic storage, sensors, or catalysis.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the Mg:Fe ratio increases, the hematite phase becomes more prevalent.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems that for all three cases the final peaks are similar after the FGA, this suggests that magnesium does not have a huge impact.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The supercycle ratio is 0.23.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The transformation is much more pronounced than in the pure iron oxide case. After FGA, the hematite reflections (labeled H) largely disappear or diminish significantly, while the magnetite reflections (labeled M, such as 311, 220, 400) become dominant. This indicates that high Mg content facilitates a more complete conversion to the magnetite phase upon annealing.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Many reflections in magnetite and maghemite coincide, and the maghemite reflection at 26.103° (useful for distinguishing) is not apparent in most patterns, so XRD-only discrimination is not reliable here. In Mg-containing films, strong 220/311/400 reflections of MgFe₂O₄ can also overlap identically with magnetite, although the measured Mg/Fe ratios in these specific samples would not allow MgFe₂O₄ to be the major phase (it could still contribute). Because of this overlap, the reflections are denoted using magnetite indices as a reporting convention to emphasize differences from hematite.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Mg:Fe atomic ratio of 0.02 by EDX resulted in the formation of mixed films containing both hematite and magnetite (b)which were again turned\\ninto magnetite/maghemite upon FGA.\\n2. Mg/Fe atomic ratios 0.23 resulted in the growth of films without unambiguous reflections of hematite after annealing.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.23 and 0.38, respectively.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hematite (α-Fe₂O₃), Magnetite (Fe₃O₄), Maghemite (γ-Fe₂O₃)\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The FGA shifts the hematite phase to the magnetite phase.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"FGA promotes the partial reduction of hematite (Fe₂O₃) to magnetite (Fe₃O₄). This is evidenced by the appearance of magnetite-specific diffraction peaks, such as the (220)_M and (400)_M reflections, in the annealed sample (bottom trace) compared to the as-deposited sample (top trace).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The (110) reflection (which overlaps with the Magnetite 311 position) appears to be the most intense peak.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Magnetite offers distinct properties compared to hematite, such as higher electrical conductivity and ferrimagnetism. By using Mg doping to stabilize this phase at moderate growth temperatures (like 425 °C), these functional properties can be integrated into devices such as spintronic components or sensors more reliably than using pure iron oxide, which tends to favor hematite.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The paper states that at 425 °C the as-deposited undoped film consists completely of hematite. After FGA, the diffraction pattern is interpreted as having turned into magnetite, evidenced by the appearance of characteristic 311, 220, 400, and 422 reflections and a small but detectable shift between the nearby hematite 110 and magnetite 311 peak positions. This is consistent with hydrogen-containing anneal conditions driving partial reduction of Fe(III) oxide toward Fe(II)/Fe(III) spinel-type oxide.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"FGA significantly reduces hematite (Fe₂O₃) peaks and enhances magnetite (Fe₃O₄) peaks in all cases. For pure iron oxide films, hematite dominates in the as-deposited state but converts largely to magnetite after FGA. In Mg-doped films, the effect is more pronounced—especially at higher Mg/Fe ratios—where magnetite becomes the dominant phase after annealing. This indicates that FGA promotes reduction of Fe³⁺ to Fe²⁺ and stabilizes magnetite under a reducing atmosphere.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At low Mg/Fe ratio (0.02), hematite remains significant even after FGA, though magnetite peaks increase. At high Mg/Fe ratio (0.23), magnetite peaks (e.g., 311_M, 400_M) dominate strongly, and hematite peaks are greatly suppressed. This trend shows that Mg incorporation favors magnetite formation and improves its crystallinity, likely by altering oxygen activity and lattice strain during growth and annealing.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Hematite (alpha-Fe2O3).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3:100 (corresponding to an Mg:Fe atomic ratio of 0.02).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 425 °C, undoped Fe2O3 films initially crystallize as hematite, but after forming-gas annealing they convert completely to magnetite, exhibiting characteristic 311, 220, 400, and 422 reflections. Introducing small amounts of MgO (3 MgO cycles per 100 Fe2O3 cycles) produces mixed hematite-magnetite films that transform to magnetite or maghemite upon annealing. Further increasing Mg incorporation to 20-30 cycles shifts the diffraction peaks toward lower 2theta values corresponding to magnetite or maghemite, indicating suppression of hematite formation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film transforms from hematite to magnetite.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Before annealing: 110 (Hematite), after FGA: 311 (Magnetite).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The diffraction angle 2θ (degrees).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hematite (Fe₂O₃), Magnetite (Fe₃O₄)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":555,"height":429},{"panel_id":"b","x":0,"y":429,"width":552,"height":377},{"panel_id":"c","x":3,"y":812,"width":550,"height":425}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/Kaupo Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":525,"height":1280,"image_format":"jpeg","image_sha256":"77f6dd59ef3d265651b7c6099104d8a74888816bf82e6685e92f28390d82c8a6","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_30_figure_3.jpg","caption":"Figure 3. Raman spectra of $328\\mathrm{nm}$ thick $\\mathrm{Mg}$ Fe oxide film (cycle ratio 1:100) grown at $400^{\\circ}\\mathrm{C}$ from $\\mathrm{FeCp_2}$ (top panel), $425\\mathrm{nm}$ thick $\\mathrm{Mg}$ Fe oxide film (cycle ratio 2:100, $\\mathrm{Mg / Fe} = 0.017$ grown at $375^{\\circ}\\mathrm{C}$ from $\\mathrm{CdFeC_5H_4CHN(CH_3)_2}$ (middle panel), and those of 65 and $223\\mathrm{nm}$ thick $\\mathrm{Mg / Fe}$ oxide films grown with cycle ratio 5:100 $(\\mathrm{Mg / Fe} = 0.05 - 0.06)$ at 425 and $375^{\\circ}\\mathrm{C}$ respectively (bottom panel). Patterns taken from annealed films are bold and labeled with FGA.","id":"train/atomic-layer-deposition/experimental-usecase/30/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/30/figure_3","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The spectra chart displays the Raman spectra of a 328 nm-thick Mg–Fe oxide film (cycle ratio 1:100) grown at 400 °C from FeCp₂, highlighting peaks at specific wavenumbers corresponding to different iron oxide phases.\"},{\"panel_id\":\"b\",\"text\":\"The spectral chart shows the Raman spectra of a 425 nm-thick Mg–Fe oxide film (cycle ratio 2:100, Mg/Fe = 0.017) grown at 375 °C from CpFeC₅H₄CHN(CH₃)₂, with distinct peaks indicating the presence of α-Fe₂O₃, γ-Fe₂O₃, and Fe₃O₄ phases\"},{\"panel_id\":\"c\",\"text\":\"The spectral chart presents Raman spectra recorded at two different temperatures for Mg–Fe oxide films with thicknesses of 65 nm and 223 nm, grown using a cycle ratio of 5:100 (Mg/Fe = 0.05–0.06) at 425 °C and 375 °C, respectively, showing signatures of Si, SiO₂, and multiple iron oxide phases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Raman shift (cm⁻¹) | Relative intensity | Assignment |\\n|--------------------|--------------------|---------------------|\\n| ~225 | Medium | α-Fe₂O₃ |\\n| ~293 | Medium | α-Fe₂O₃ |\\n| ~412 | Medium | α-Fe₂O₃ |\\n| ~498 | Low | α-Fe₂O₃ |\\n| ~538 | High | Fe₃O₄ (magnetite) |\\n| ~668 | High | Fe₃O₄ (magnetite) |\\n| ~1320 | Medium | α-Fe₂O₃ |\"},{\"panel_id\":\"b\",\"text\":\"| Raman shift (cm⁻¹) | Relative intensity | Assignment |\\n|--------------------|--------------------|---------------------|\\n| ~306 | Medium | Fe₃O₄ |\\n| ~538 | Medium | Fe₃O₄ |\\n| ~668 | High | Fe₃O₄ |\\n| ~720 | Medium | γ-Fe₂O₃ |\\n| ~1320 | Medium | α-Fe₂O₃ |\\n| ~1430 | Low | γ-Fe₂O₃ |\\n| ~1580 | Low | γ-Fe₂O₃ |\"},{\"panel_id\":\"c\",\"text\":\"| Raman shift (cm⁻¹) | Relative intensity | Assignment |\\n|--------------------|--------------------|---------------------|\\n| ~225 | Medium | α-Fe₂O₃ |\\n| ~293 | Medium | α-Fe₂O₃ |\\n| ~412 | Medium | α-Fe₂O₃ |\\n| ~514 | Medium | Si substrate |\\n| ~538 | High | Fe₃O₄ |\\n| ~668 | High | Fe₃O₄ |\\n| ~1320 | Medium | α-Fe₂O₃ |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both samples exhibit the same peaks, but with slightly different intensities.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The peaks related to Fe3O4 are best represented in the spectrum, indicating this stoichiometry is seen the most in film.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Strong Fe₃O₄ modes at 193, 306, 538, and 668 cm⁻¹ appear in (b).\\n-γ-Fe₂O₃ bands at 720, 1430, and 1580 cm⁻¹ are present only in (b).\\n-The 1320 cm⁻¹ α-Fe₂O₃ band is weaker relative to low-frequency modes in (b).\\n-Overall spectral complexity in (b) indicates incomplete phase stabilization.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Magnetite and maghemite offer complementary magnetic and electronic properties. Their coexistence, as seen in subfigure (b), may enable tunable conductivity and magnetic response while retaining partial oxidation stability, which can be beneficial for sensing or catalytic applications.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 400 °C (panel a), the Raman spectrum is dominated by hematite bands, with only weak magnetite markers (538/668 cm⁻¹). At 375 °C (panel b), the magnetite markers become strong, and maghemite-related bands are also indicated. Overall, the lower growth temperature shifts the films toward more reduced/spinel-like iron oxide signatures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Hematite (α-Fe₂O₃): ~225, 293, 412, 498, 613, 1320 cm⁻¹\\n\\nMagnetite (Fe₃O₄): ~193, 306, 538, 668 cm⁻¹\\n\\nMaghemite (γ-Fe₂O₃): ~380, 500, 720, ~1450, ~1580 cm⁻¹\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At low Mg/Fe ratio (0.017) and 375 °C, hematite dominates with minor magnetite and maghemite (γ-Fe₂O₃) peaks. At higher Mg/Fe ratios (0.05–0.06), magnetite peaks become stronger, and hematite peaks weaken significantly. Lower growth temperature (375 °C) promotes γ-Fe₂O₃ formation, while higher temperature (425 °C) favors α-Fe₂O₃ unless Mg doping is substantial. Thus, Mg doping and lower temperature both encourage mixed-phase formation and magnetite stabilization.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increased magnetite content (strong 538 and 668 cm⁻¹ peaks) improves ferrimagnetic behavior and electrical conductivity, essential for magnetic applications. The presence of γ-Fe₂O₃ and defect-rich structures at higher Mg doping enhances catalytic activity for reactions like oxygen evolution. Hematite-rich films, in contrast, have lower conductivity and weaker magnetism but better photoelectrochemical properties.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. For the hematite phase, α-Fe2O3, bands at 225, 293, 412, 498, 613, and 1320 cm−1 are typical. \\n2. For the magnetite phase, γ-Fe2O3, bands at 380, 500, 720, 1450 and 1580 cm−1 are typical.\\n3. For the magnetite phase, bands at 668, 538, 306, and 193 cm−1 are typical.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.017.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A shoulder at approximately 700 cm^-1 next to the main 668 cm^-1 magnetite band (middle panel).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Hematite (α-Fe₂O₃), magnetite (Fe₃O₄) and maghemite (γ-Fe₂O₃)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Raman shift (cm⁻¹).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"α-Fe₂O₃ ,γ-Fe₂O₃ ,Fe₃O₄\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The top panel is dominated by hematite (α-Fe₂O₃), while the bottom panel shows a mixture of hematite and magnetite (Fe₃O₄) with minor maghemite (γ-Fe₂O₃) features.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Raman spectroscopy can detect minor or overlapping phases that might not be visible in GIXRD. In these films, Raman revealed magnetite and maghemite contributions even when GIXRD indicated primarily hematite. This makes it particularly valuable for studying the effects of MgO doping, low-temperature growth, and annealing, providing a more detailed understanding of the film’s phase composition and structural changes.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The as-deposited film and the film after annealing show the same peaks i.e. same phases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For the FGA and as-deposited spectra peaks related to the same stoichiometry are measured. So it does not change.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In subfigure (a), Mg incorporation modifies the local Fe–O coordination, leading to well-resolved α-Fe₂O₃ phonon modes between 225 and 613 cm⁻¹. The relative weakness of magnetite peaks suggests that Mg stabilizes hematite-like bonding environments, particularly after FGA treatment, by suppressing extensive reduction to Fe₃O₄.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"“FGA” refers to forming gas annealing applied after deposition. In this figure, spectra from annealed films are shown as bold traces and/or explicitly labeled “FGA” (clearest in panel a). The comparison is used to see how annealing changes the relative strength of hematite-, magnetite-, and maghemite-related Raman bands.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Magnetite/maghemite formation is directly relevant to the magnetic response targeted in the study, so confirming these phases matters for interpreting magnetization trends. Raman can reveal minor or mixed phases that are weak or overlapping in GIXRD, especially in the 375–400 °C regime. The Raman results are therefore used as added evidence that reduced iron oxide (magnetite-like) is present in samples where diffraction alone is ambiguous.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"FGA reduces the intensity of hematite (α-Fe₂O₃) peaks at 225, 293, 412, 498, 613, and 1320 cm⁻¹ and enhances magnetite (Fe₃O₄) peaks at 538 and 668 cm⁻¹. This indicates a phase transformation from Fe³⁺-rich hematite to mixed-valence magnetite under reducing conditions. The effect is consistent across all panels, regardless of Mg/Fe ratio, but is more pronounced in films with higher Mg content.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mg-doped magnetite-rich films combine high electrical conductivity and strong ferrimagnetism, making them ideal for spintronic devices and magnetic sensors. Additionally, Mg doping introduces lattice defects that improve catalytic activity for water splitting and CO₂ reduction. Hematite-rich films are better suited for photocatalysis but lack the magnetic and electronic performance required for advanced multifunctional devices.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"According to the Raman results, the films grown using MgO:Fe2O3 cycling ratio of 5:100 (Mg/Fe atomic ratio of ca. 0.05) at 425◦C were a mixture of hematite and magnetite, whereas the films grown at 375◦C mainly consisted of magnetite (c). In the spectra, several peaks implied the presence of the maghemite phase. This phase was not clearly detected by GIXRD. Also, in the as-deposited films grown at 400◦C, magnetite was not recognized by GIXRD, whereas Raman indicated the presence of the magnetite as an additional phase. In general the Raman results support the observations by GIXRD.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"225, 293, 412, 498, 613, 1320\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Maghemite (gamma-Fe2O3, bottom panel).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Hematite is the dominant phase, weak peaks of magnetite are also visible.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A new peak appears at 498 cm−1. Beside that, there are no visible change in the spectrum.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Peaks near 538 cm⁻¹ and 668 cm⁻¹ indicate magnetite (Fe₃O₄).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Hematite, maghemite, and magnetite.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"425 °C\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It seems that higher temperatures are required to have any cristal like growth.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Grow thicker layers, all the other spectra of the thicker films do not show this peak.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"γ-Fe₂O₃ (maghemite).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The shoulder at 700 cm−1 for the main band at 668 cm−1 can also be attributed to magnesioferrite according to the Raman database.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film grown at 425°C exhibits peaks characteristic of hematite, whereas the film grown at 375°C is dominated by peaks attributed to magnetite. The O/Fe ratio in magnetite is approx. 1.33, which is lower than the corresponding ration in hematite (1.5). Therefore, the lower temperature of 375°C results in the formation of more oxygen-deficient film. This means that the oxidation rate at 375°C is lower, as this temperature is insuficient to fully complete the oxidation at the studied pulse times.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hematite (α-Fe₂O₃): 225, 293, 412, 498, 613, 1320 cm⁻¹, Magnetite (Fe₃O₄): 193, 306, 538, 668 cm⁻¹, Maghemite (γ-Fe₂O₃): 720, 1450, 1580 cm⁻¹, Magnesioferrite (shoulder): ~700 cm⁻¹\"}]}]","bbox":[{"panel_id":"a","x":1,"y":5,"width":551,"height":426},{"panel_id":"b","x":0,"y":429,"width":552,"height":378},{"panel_id":"c","x":4,"y":804,"width":547,"height":430}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/Kaupo Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":556,"height":1236,"image_format":"jpeg","image_sha256":"a12e9d139f44e11d1bda31ff6a365de71d2b21d5f5b7de3813cf8114ccdeac12","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_30_figure_4.jpg","caption":"Figure 4. X-ray absorption spectra, measured in total fluorescence yield mode, of $117\\mathrm{nm}$ thick non-doped film grown at $400^{\\circ}\\mathrm{C}$ from $\\mathrm{FeCp_2}$ (a), $328\\mathrm{nm}$ thick film grown with $\\mathrm{Fe}_2\\mathrm{O}_3$ MgO cycle ratio 100:1 (no $\\mathrm{Mg}$ detected) at $400^{\\circ}\\mathrm{C}$ from $\\mathrm{FeCp_2}$ (b), $72\\mathrm{nm}$ thick non-doped film grown at $375^{\\circ}\\mathrm{C}$ from $\\mathrm{CdFeC_5H_4CHN(CH_3)_2}$ (c), $425\\mathrm{nm}$ thick film grown with cycle ratio 100:2 $(\\mathrm{Mg / Fe} = 0.017)$ at $375^{\\circ}\\mathrm{C}$ from $\\mathrm{CdFeC_5H_4CHN(CH_3)_2}$ (d), and $411\\mathrm{nm}$ thick film grown with cycle ratio 100:10 $(\\mathrm{Mg / Fe} = 0.062)$ at $375^{\\circ}\\mathrm{C}$ from $\\mathrm{CdFeC_5H_4CHN(CH_3)_2}$ (e). In $\\mathrm{L}_3$ edges are depicted in upper panel, while the O K-edge spectra are shown in lower panel.","id":"train/atomic-layer-deposition/experimental-usecase/30/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/30/figure_4","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The O K-edge spectra show clear shape differences between as-deposited and forming-gas-annealed films. Annealing sharpens the main peak around 533–536 eV and slightly reduces intensity near the edge onset. Mg-containing films differ from non-doped ones, especially in the pre-edge region. Samples grown at 375 °C and 400 °C do not overlap fully, showing a temperature-dependent oxygen environment.\"},{\"panel_id\":\"b\",\"text\":\"The Fe L-edge spectra display strong changes in the L₃ multiplet region between ~709 and 715 eV. Increasing Mg content modifies the multiplet shape and relative peak intensities. Forming-gas annealing consistently alters the spectral fine structure, making features more defined. Differences between growth temperatures remain visible, indicating that Mg incorporation and annealing both affect the Fe electronic state.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Doping Ratio | Annealing Temp (°C) | O 1s Main Peak (~eV) | Secondary Features (~eV) | Notes |\\n|--------|--------------|---------------------|-----------------|--------------------------|-------|\\n| a) | non-doped | 400 | ~530 | shoulders at ~532, ~540 | Sharp main peak |\\n| b) | 100:1 | 400 | ~530 | shoulders at ~532, ~540 | Similar to non-doped |\\n| c) | non-doped | 375 | ~530 | shoulders at ~532, ~540 | Sharp main peak |\\n| d) | 100:2 | 375 | ~530 | shoulders at ~532, ~540 | Similar profile |\\n| e) | 100:10 | 375 | ~530 | broader peak at ~540 | More pronounced high energy feature |\"},{\"panel_id\":\"b\",\"text\":\"| Sample | Doping Ratio | Annealing Temp (°C) | Fe 2p Main Peak (~eV) | Satellite Features (~eV) | Notes |\\n|--------|--------------|---------------------|-----------------|--------------------------|--------|\\n| a) | non-doped | 400 | ~710 | multiplet structure 720-730 | Sharp L3 edge |\\n| b) | 100:1 | 400 | ~710 | multiplet structure 720-730 | Similar to non-doped |\\n| c) | non-doped | 375 | ~710 | multiplet structure 720-730 | Sharp L3 edge |\\n| d) | 100:2 | 375 | ~710 | multiplet structure 720-730 | Similar profile |\\n| e) | 100:10 | 375 | ~710 | multiplet structure 720-730 | Highest doping concentration |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Non-doped at 400 °C, both as-deposited and the other forming gas annealed samples, exhibit the same behavior.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 375 degrees celcius the bold and normal lines doe not overlap, indicating that FGA has the most effect on films grown at lower temperatures.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Photons with an energy around 710 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Increased multiplet broadening near ~709–715 eV\\n-Reduced peak asymmetry at higher Mg content\\n-More pronounced differences between as-deposited and FGA states\\n-Gradual redistribution of intensity between L₃ and L₂ regions\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Fe L₃ edge multiplet structure between ~709 and 715 eV.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It stands for Total Fluorescence Yield, which is a photon-in/photon-out detection method that typically probes the bulk of the film rather than just the surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 400 °C Fe 2p spectra (a,b) are described as hematite-like, with a more clearly split/double-peak L₃ structure. The 375 °C spectra (c–e) are described as magnetite-like, where the lower-energy L₃ feature is mainly a shoulder rather than a fully resolved peak. This separation is one of the main chemical-state indicators used in the paper for grouping samples by growth temperature.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A practical marker is an increased shoulder ~1–1.5 eV below the main L₃ (and similarly L₂) peak when Fe²⁺ is present. In this dataset, that shoulder is more prominent in the 375 °C group and becomes more emphasized after FGA, making the spectra resemble magnetite more closely. This is the specific line-shape argument cited in the discussion around Fig. 4.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The observed shifts and intensity changes suggest increased Fe²⁺ content and oxygen vacancies, leading to improved electrical conductivity and magnetic properties. Mg doping further stabilizes these reduced states, creating a structure closer to magnetite, which enhances electron transport and magnetic ordering.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mg-doped films exhibit enhanced Fe²⁺ content and oxygen vacancies, improving electron transport and magnetic ordering, which are critical for spintronic devices. Additionally, oxygen vacancies and mixed-valence states boost catalytic activity for oxygen evolution and reduction reactions, making these films multifunctional for energy and electronic applications.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The annealing (FGA) procedure enhanced and shifted the smaller L3 main peak slightly above 708.5 eV toward the main L3 peak at 710 eV, so that the overall spectral curve became more similar towhat has been observed for magnetite.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The measured O 1s XA spectra agree well with the trends indicated by the Fe 2pspectra and give additional support to the proposition that magnetite (main peak at 709 eV) is indeed present and dominant in the samples deposited at 375◦C from CpFeC5H4CHN(CH3)2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The peaks at 708.5 and 710 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Excitation of electrons from the Iron 2p core level to the unoccupied Iron 3d.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There are two distinct absorbtion regions, which are separated by ~ 13 eV from each other. The two main absorption regions arise from the spin-orbit coupling of the core hole created when an X-ray photon ejects a 2p electron. This interaction splits the core states into two distinct energy levels defined by their total angular momentum, specifically the 2p 3/2 and 2p 1/2 states. Lower energy peak at ~ 710 eV corresponds to the 2p 3/2 (L3 edge) and the higher energy peak at ~723 eV corresponds to the 2p 1/2 (L2 edge).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Forming gas annealing leads to noticeable changes in the spectral features for both the O 1s and Fe 2p edges. In several panels, peak shapes and relative intensities are modified after annealing, indicating changes in the local electronic structure and bonding environment of oxygen and iron induced by the annealing process.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Non-doped, 100:1, 100:2, 100:10, 400 °C, 375 °C, As-deposited, Forming gas annealed\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Films deposited at 400°C show a clear double-peak L₃ structure typical of hematite, while films deposited at 375°C resemble magnetite, with the L₃ main peak partly appearing as a low-energy shoulder.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hematite: Clear double-peak L₃ structure around 710–711 eV in Fe 2p spectra, Magnetite: L₃ main peak partly resolved as a low-energy shoulder around 709 eV, Mixed phases (e.g., low MgO content film): Fe L₃ resembles hematite; O K-edge resembles magnetite\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The XAS spectra allow identification of the dominant iron oxide phase in the films. Higher deposition temperatures (400°C) produce hematite-like spectra, while lower temperatures (375°C) produce magnetite-like spectra. MgO doping at low ratios (100:1) introduces a mixed behavior: Fe L₃ spectra resemble hematite, while O K-edge spectra resemble magnetite. Forming gas annealing shifts the spectral features, confirming that both temperature and MgO content influence the oxidation state and phase composition of the films. These insights are critical for tailoring the magnetic and structural properties of Mg-Fe oxide films.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Film growth temperature, Fe2O3:MgO ratio, and treatment (as deposited or forming gas annealed).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"There is not a large difference in the spectra for those conditions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All peaks at 375 degrees Celsius have similar shape, indicating that doping does not have a huge effect.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To have a good overview the spectrum of magnesium could be added to get a better understanding of why shifts are present in the given spectra.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Across all samples, forming-gas annealing sharpens the main O K-edge peak near ~533–536 eV and slightly suppresses low-energy intensity near the edge onset. These changes indicate a redistribution of oxygen coordination environments rather than a rigid energy shift. The effect is strongest in Mg-containing films, suggesting annealing interacts with Mg-induced defect structures.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For each sample (a–e), two spectra are shown: as-deposited (thin line) and forming-gas annealed (FGA) (bold line). This directly isolates the effect of the anneal on the O K-edge and Fe L-edge line shapes. The figure uses the same comparison across all five samples so temperature and Mg-cycling effects can be judged consistently.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The magnetic behavior in this work is linked to whether the films are closer to hematite-like or magnetite-like chemistry. Showing both edges provides cross-checking: Fe 2p is sensitive to Fe oxidation/multiplet structure, while the O edge provides complementary information, and in most cases they trend together. The noted mismatch in the 100:1 sample (Fe-edge hematite-like, O-edge magnetite-like) flags that phase/chemistry assessment can be nontrivial from a single edge alone.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"FGA reduces the intensity of higher-energy O K-edge features and slightly shifts Fe L₃-edge peaks toward lower energy, indicating oxygen vacancy formation and partial reduction of Fe³⁺ to Fe²⁺. This process promotes magnetite-like electronic environments, especially in Mg-doped films, by creating mixed-valence states and improving electron mobility.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Non-doped films grown at 400 °C show minimal spectral changes after FGA, while Mg-doped films grown at 375 °C exhibit significant modifications, including stronger Fe²⁺ signatures and altered O K-edge features. Increasing Mg/Fe ratio from 0.017 (sample d) to 0.062 (sample e) enhances these effects, indicating that Mg doping facilitates reduction and stabilizes oxygen-deficient structures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the main features of the hematite and magnetite L3 XAS tend to overlap to a degree.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"When the films are annealed, the hematite could transition to (a larger fraction of) magnetite. Visually, in the Fe 2p region, the smaller L_3 peak at 708.5 eV shifts toward the main L_3 peak at 710 eV in that case. A similar trend is also observable for the O 1s region where the peak at 530 eV shifts toward 532 eV. Annealing has no significant effect on films grown at 400 °C (a, b), but does have a significant effect on films grown at 375 °C (c, d, e).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.062\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The peaks at 530 and 532 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The films grown at 400 °C (a, b).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Hematite spectra ( 400 °C) show a double-peak shape and magnetite spectra show a single-peak. The O 1s spectrum (1s → 2p transition) reflects the electronic structure of the oxygen atoms, but these oxygen 2p orbitals are hybridized with the iron 3d orbitals. So the shape observed in the oxygen spectrum is actually an indirect map of the energy splitting in the iron 3d, which reflects the difference in oxidation state and geometric configuration in hematite compared to magnetite.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The O 1s edge and the Fe 2p edge.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":1,"y":5,"width":677,"height":474},{"panel_id":"b","x":0,"y":484,"width":679,"height":475}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/Kaupo Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":681,"height":959,"image_format":"jpeg","image_sha256":"c37af013790dccc3bfee5221e66f095c1bc24ca086b942c9965127b1fe8847b7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_30_figure_5.jpg","caption":"Figure 5. X-ray absorption spectra, measured in total electron yield mode, of non-doped and doped films grown at $425^{\\circ}\\mathrm{C}$ from $\\mathrm{CpFeC_5H_4CHN(CH_3)_2}$ . The legend indicates the magnesium (oxide) content in the films measured by EDX.","id":"train/atomic-layer-deposition/experimental-usecase/30/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/30/figure_5","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The Fe 2p XAS spectra show a clear evolution with increasing Mg content in Fe₂O₃:MgO films grown at 425 °C. All samples exhibit the characteristic Fe L₃ and L₂ edges near ~710 and ~724 eV, respectively, but the multiplet structure progressively broadens as Mg concentration increases. Even at 0.02 at.% Mg, reduced peak definition is visible relative to the non-doped film. At higher Mg levels (0.2–0.38 at.%), multiplet attenuation and baseline elevation indicate increased local disorder and modified Fe–O coordination. The use of TEY emphasizes near-surface electronic changes induced by Mg incorporation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Photon energy (eV) | Relative intensity | Sample |\\n| ------------------ | ------------------ | ------------ |\\n| ~710 | High | non-doped |\\n| ~724 | Medium | non-doped |\\n| ~710 | High | Mg 0.02 at.% |\\n| ~724 | Medium | Mg 0.02 at.% |\\n| ~710 | Medium | Mg 0.2 at.% |\\n| ~724 | Medium | Mg 0.2 at.% |\\n| ~710 | Low | Mg 0.38 at.% |\\n| ~724 | Low | Mg 0.38 at.% |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The non-doped films, and the films with an atomic percentage of Mg of: 0.02%, 0.20%, and 0.38%.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In all cases, the peaks were observed at: 708 eV, 710 eV, 722 eV, and 723 eV.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"All of them have the same peaks.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No difference in the photon energy is observed at the peaks, nor is any shift observed.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Based on the peak positions and the lack of shifts it seems that the doping does not have an effect.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No the spectra do not show this\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The minimum number of peaks that can be identified is three. There are the two sharp peaks and the should on the right hand side.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It is possible to use mathematical formulas to determine the iron and oxygen percentages in the film, based on physical constants.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With increasing Mg content, the Fe L₃ multiplet structure becomes progressively broader and less well resolved. This trend reflects increasing distortion of the local Fe–O coordination environment as Mg substitutes into the lattice. The attenuation of sharp multiplet features indicates a wider distribution of Fe–O bond lengths and local electronic environments.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Reduced intensity of Fe L₃ and L₂ multiplet peaks\\n-Increased baseline signal across 720–730 eV\\n-Broader peak envelopes indicating electronic disorder\\n-Suppressed shoulder features characteristic of crystalline Fe₂O₃\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 710–711 eV.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TEY detection probes only the near-surface region, where dopant-induced electronic changes are most pronounced. Low Mg concentrations primarily perturb local Fe–O coordination rather than bulk crystallinity, making surface-sensitive techniques essential. TEY-XAS therefore highlights subtle multiplet modifications that would be averaged out in bulk-sensitive measurements.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"x-axis: photon energy (eV), Fe 2p edge region (~700–740 eV)\\n\\ny-axis: intensity (arb. units), TEY signal\\n\\ncurves: non-doped Fe₂O₃ and Mg-doped Fe₂O₃:MgO with Mg = 0.02, 0.2, 0.38 at.% (by EDX)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The paper reports that the non-doped and 0.02 at.% Mg spectra remain hematite-like. At higher Mg levels (0.2 and ~0.4 at.%), the shoulder near ~708.5 eV decreases in intensity. This change is discussed as potentially indicating a small magnetite contribution, consistent with the diffraction-based interpretation.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A key discriminator used in the paper is the relative intensity of the shoulder around ~708.5 eV on the Fe L₃ edge. Hematite-like spectra show a more pronounced split/shoulder structure in this region. With increased Mg content, the reduced shoulder intensity is interpreted as moving away from a purely hematite-like signature and toward spectra compatible with a minor magnetite component.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The work links Mg dosing to changes in phase/chemical state that matter for magnetic behavior and film properties. Fe 2p XAS provides a sensitive fingerprint for changes in Fe-oxide electronic structure as Mg is introduced. The TEY measurement adds a complementary view to diffraction by tracking how Fe 2p features evolve with doping level in the 425 °C growth series.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing Mg content modifies the Fe L₃-edge intensity and broadens the spectral features, indicating changes in Fe oxidation state and local coordination. Mg doping introduces oxygen vacancies and stabilizes mixed-valence Fe states (Fe²⁺/Fe³⁺), shifting the electronic structure toward magnetite-like characteristics.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As Mg concentration increases, the Fe L₃ peak intensity decreases and the spectral shape becomes broader, suggesting increased disorder and partial reduction of Fe³⁺ to Fe²⁺. This trend indicates that Mg doping promotes electronic restructuring and oxygen vacancy formation, with the strongest effect at 0.38 at.% Mg.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mg doping introduces oxygen vacancies and stabilizes Fe²⁺ states, improving electrical conductivity and magnetic ordering. These changes enhance ferrimagnetic behavior and electron transport, making the films more suitable for spintronic and catalytic applications.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mg-doped films exhibit improved electronic conductivity and magnetic properties due to mixed-valence Fe states and oxygen vacancies. These features are critical for spintronic devices, magnetic sensors, and catalytic processes such as oxygen evolution and CO₂ reduction, offering multifunctional performance.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Total Electron Yield (TEY) and Total Fluorescence Yield (TFY) are common detection modes in X-ray Absorption Spectroscopy (XAS), especially soft X-ray XAS (NEXAFS), where TEY measures emitted secondary electrons (surface-sensitive) and TFY measures all emitted X-ray fluorescence (bulk-sensitive).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The doped films grown at 425◦C from CpFeC5H4CHN(CH3)2 have the following concentrations, \\n1. Mg 0.02 at %\\n2. Mg 0.2 at %\\n3. Mg 0.38 at %\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The undoped Fe2O3 samples and those doped with 0.02 at.%Mg resembled the hematite spectrum, while samples with increased doping level (0.2 at.% and 0.4 at.%) showed a decreased intensity of the shoulder at 708.5 eV in the Fe 2p spectrum, possibly due to the presence of a small magnetite component.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This is a surface-sensitive measurement because the figure indicates the spectra were collected in Total Electron Yield (TEY) mode. TEY detects secondary and Auger electrons which typically have an escape depth of only < 10 nanometers due to their short mean free path in solids. Consequently, the resulting spectrum primarily characterizes the chemical state of the uppermost layers of the film rather than the bulk material.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The L3 edge (at ~ 710 eV) has higher intensity than L2, which is consistent with statistical ratio expected for those transitions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"~ 13 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing Mg concentration leads to a reduction in Fe 2p peak intensity and broader spectral features, indicating modification of the Fe electronic environment due to Mg incorporation.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"X-ray Absorption Spectroscopy (XAS) in total electron yield (TEY) mode.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Non-doped, 0.02 at.%, 0.2 at.%, and 0.38 at.% Mg.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both undoped films and those with 0.02 at.% Mg exhibit spectra characteristic of hematite, with the Fe 2p L3 main peak and a shoulder at 708.5 eV.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Hematite: L3 main peak around 710 eV, shoulder at 708.5 eV, Magnetite: Reduced intensity of the shoulder at 708.5 eV and changes in L3 peak shape\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Understanding the influence of Mg doping on the Fe 2p electronic structure helps to correlate doping levels with phase composition and material properties. The XAS spectra reveal how Mg incorporation modifies the balance between hematite and magnetite phases, which can impact the magnetic, electronic, and catalytic behavior of the films. Such knowledge is essential for tailoring the properties of Fe₂O₃-based functional materials for applications in sensors, catalysis, or spintronic devices.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, higher Mg doping levels reduce the intensity of the shoulder at 708.5 eV, indicating a partial shift from hematite toward a minor magnetite component.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":531,"height":470}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/30/Kaupo Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":531,"height":470,"image_format":"jpeg","image_sha256":"7b650aa63d1368a57a32271190a50ddcf09e61d8d506952c6a188a6dcefd6efe","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_35_figure_3.jpg","caption":"Figure 3. Gracing incidence X-ray diffractograms of a $\\mathrm{Sb}_2\\mathrm{Te}_3$ film deposited at $60^{\\circ}\\mathrm{C}$ and a GeTe film deposited at $90^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/35/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/35/figure_3","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays the intensity of X-ray diffraction peaks at various 2θ angles, indicating crystalline phases of two materials: GeTe and Sb2Te3.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ | Intensity (au) GeTe| Intensity (au) Sb2Te3|\\n|---|---|---|\\n| 20 | - | -|\\n| 27 | 021 peak | 009 peak|\\n| 28 | - |015 peak |\\n| 30 | 202 peak |-|\\n| 38 | - |1 0 10 peak |\\n| 43 | 024 peak |110 peak|\\n| 45 | 220 peak |0015 peak|\\n| 52 | Si peak |205 peak|\\n| 63 | - |1 0 19 peak|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Most peaks do not overlap, however de 220 and 110 peaks should belong to similar crystal phases.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"015\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The used substrate is silicon. This can be seen by the silicon peak in GeTe, the visibility of this peak also indicates that this film is thinner.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both materials are poly-crystalline\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":385,"height":325}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/Viljami Pore et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":389,"height":330,"image_format":"jpeg","image_sha256":"f22d7ba2b42493d6303db953b1967234ff692eba4a8027812248973c532ec3e3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_37_figure_2.jpg","caption":"Figure 2. Comparison of different $\\mathrm{MS}_2$ films on mica. In-plane $\\phi$ scans of the (1 0 1 0) reflections of $\\mathrm{SnS}_2$ (28.35° 20 $\\chi$ ), $\\mathrm{HfS}_2$ (28.6° 20 $\\chi$ ), and $\\mathrm{ZrS}_2$ (28.2° 20 $\\chi$ ) films. For clarity, only a single measurement of the (0 2 0) mica reflection is shown (19.7° 20 $\\chi$ ), although the registration was individually checked for each sample. The data has been offset vertically.","id":"train/atomic-layer-deposition/experimental-usecase/37/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/37/figure_2","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays multiple XRD spectra of SnS₂, HfS₂, ZrS₂, films grown on mica, with intensity plotted against φ (°).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Material | Peaks (°) |\\n|--------------|-------------------------------------|\\n| (10\\\\bar{1}0) SnS₂ | ~0, ~60, ~120, ~180, ~240, ~300 |\\n| (10\\\\bar{1}0) HfS₂ | ~0, ~60, ~180, ~240, ~300 |\\n| (10\\\\bar{1}0) ZrS₂ | ~0, ~60, ~120, ~180, ~300 |\\n| (020) mica | ~0, ~90, ~180, ~270 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In terms of the out-of-plane orientation, all of these materials were strongly (0 0 0 1) oriented with FWHMs of 0.15°–0.17°\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In-plane, both 0°/60° and 30°/90° domains were observed for all of the materials, although in different amounts. For SnS2, the amount of the 30°/90°\\ndomains was the lowest, whereas for ZrS2 nearly identical amounts of the 0°/60° and 30°/90° domains were observed. The intensity ratios of the 0°/60° to 30°/90° domains obtained by integrating the peak areas were approximately 4:1, 3:1, and 1:1 for SnS2, HfS2, and ZrS2, respectively. Furthermore, ifferences in the FWHMs were observed. The 0°/60° domains of ZrS2 exhibited the smallest, although still quite large, mosaicity with a FWHM of approximately 9°compared to 14° and 19° for SnS2 and HfS2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In-plane FWHMs similar to SnS2, HfS2, and ZrS2 seen in figure have been observed in several reports on vdW epitaxy in literature. obtained an in-plane. By further optimizing the process, the in-plane disorder can be decreased.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":7,"width":466,"height":632}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/37/Mattinen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"37","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":470,"height":642,"image_format":"jpeg","image_sha256":"87c5ee2c83b61406b3f6c04ff79acd75137d77ca9d6fe1118eb9f9971700f338","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_figure_3.jpg","caption":"Figure 3. XRD diffractograms of the samples $\\mathrm{MnO}_2 - 50\\mathrm{Li} - \\mathrm{MnO}_2$ . (a) $2\\theta_{\\chi}$ and (b) $\\theta -2\\theta$ measurements. The reflections are assigned to $\\mathrm{Li}_{1 - x}\\mathrm{Mn}_2\\mathrm{O}_4$ and $\\beta -\\mathrm{MnO}_2$ . An impurity phase $\\mathrm{Li}_{2 - x}\\mathrm{MnO}_2$ is marked with an asterisk. The insets clarify the measurement geometries. The graphs are shifted and the backgrounds have been subtracted.","id":"train/atomic-layer-deposition/experimental-usecase/38/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/38/figure_3","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays X-ray diffraction patterns of various lithium manganese oxide compounds at different concentrations MnO2, 10cLi−MnO2, 50cLi−MnO2 , The figure displays in- plane X-ray diffraction patterns showing the transition from β-MnO₂ to Li₁₋xMn₂O₄, with β-MnO₂ peaks disappearing and Li₁₋xMn₂O₄ peaks emerging after 50 lithiation cycles.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows X-ray diffraction patterns of lithium manganese oxide compounds and their lithiated phases at same concentrations MnO2, 10cLi−MnO2. This is tshown for a less 2θ angles. 50cLi−MnO2 .The figure shows out-of-plane X-ray diffraction patterns illustrating the coexistence of the new spinel phase and a minor impurity peak, along with the evolution of the film’s (100) and (200) texture during early-stage lithiation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample (trace) | Peak assignment (as labeled) | 2θ (°) |\\n|---|---|---|\\n| MnO₂ | β-MnO₂ (011) | ~37 |\\n| MnO₂ | β-MnO₂ (020) | ~40 |\\n| MnO₂ | β-MnO₂ (002) | ~65 |\\n| MnO₂ | β-MnO₂ (031) | ~72 |\\n| MnO₂ | β-MnO₂ (022) | ~79 |\\n| 10cLi–MnO₂ | Li₁₋ₓMn₂O₄ (131) | ~37 |\\n| 10cLi–MnO₂ | Li₁₋ₓMn₂O₄ (440) | ~66 |\\n| 50cLi–MnO₂ | Li₁₋ₓMn₂O₄ (111) | ~18 |\\n| 50cLi–MnO₂ | Li₁₋ₓMn₂O₄ (131) | ~37 |\\n| 50cLi–MnO₂ | Li₁₋ₓMn₂O₄ (440) | ~66 |\"},{\"panel_id\":\"b\",\"text\":\"| Sample (trace) | Peak assignment (as labeled) | 2θ (°) |\\n|---|---|---|\\n| MnO₂ | β-MnO₂ (100) | ~22 |\\n| MnO₂ | β-MnO₂ (200) | ~41 |\\n| 10cLi–MnO₂ | β-MnO₂ (100) | ~22 |\\n| 10cLi–MnO₂ | β-MnO₂ (200) | ~41 |\\n| 10cLi–MnO₂ | * Li₂₋ₓMnO₂ impurity | ~33 |\\n| 50cLi–MnO₂ | Lithiated phase (left) | ~18 |\\n| 50cLi–MnO₂ | Lithiated phase (right) | ~35 |\\n| 50cLi–MnO₂ | Li₁₋ₓMn₂O₄ (400) | ~44.5 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"An impurity phase can be observed in the out-of-plane direction at approximately 33°.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At least 50 cycles are needed to produce this phase.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As lithium content increases, diffraction peaks associated with Li₁₋ₓMn₂O₄ become more prominent, while peaks characteristic of β-MnO₂ decrease in intensity, indicating a progressive phase transformation driven by lithiation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Confirmation of lithium intercalation into manganese oxide, Structural transformation toward spinel-type phases, Relevance for lithium-ion battery electrode performance\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The (200) reflection of the tetragonal pyrolusite MnO2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reflection at 20.3° is indexed as (100), which is forbidden for symmetry reasons in the tetragonal pyrolusite space group P42/mnm, but it may appear if the residual stress in the film deforms the structure to be slightly orthorhombic instead of tetragonal.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This reflection is most likely caused by a lithium-rich Li2−zMnO2 (ICDD PDF 38-1282) impurity phase, which has (100) reflection at 32.5° and (012) reflection at 47.6°.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The (131) peak shows the highest intensity in all the samples 2θ XRD measurements\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the beginning of the lithium intercalation, three reflections of Li1−xMn2O4 are somehow visible, the reflection at an angle 44.4° being the strongest one. The reflection is indexed as (400), and it decreases in intensity as the lithium intercalation proceeds. The other two reflections at 17.7° and 35.9° are lower in intensity in these samples. At around 32.6° in the out-of-plane θ−2θ measurements of 10cLi−MnO2, there\\nis an additional “impurity” reflection.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The impurity peak is already sharp and distinct at 10 cycles, whereas the Spinel peaks (Blue) are barely visible or absent at that stage. This indicates that the impurity phase (Li₂₋ₓMnO₂) forms as an initial surface reaction product before the bulk transformation to the Spinel phase occurs.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Highly Textured / Preferred Orientation. The MnO₂ grains exhibit a strong preferred orientation, with (100) planes parallel to the substrate (visible in the θ–2θ scan, (b), while other crystallographic planes are tilted and appear only in the 2θχ scan, panel a.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"An impurity reflection at ~32.6°, likely from a lithium-rich Li₂₋ᵤMnO₂ phase (ICDD PDF 38-1282).\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Residual stress in the film deforms the tetragonal structure slightly toward orthorhombic, breaking the P4₂/mnm space group symmetry and allowing the forbidden reflection.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lithiation introduces new out-of-plane reflections associated with lithiated phases while reducing the dominance of β-MnO₂ peaks. This indicates that lithium insertion modifies the crystallographic orientation and phase composition detectable in θ–2θ geometry.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Influences ionic and electronic transport\\n-Can cause non-uniform electrochemical behavior\\n-Affects cycling stability\\n-Reflects incomplete or heterogeneous lithiation\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The (100) and (200) peakls are still present in the lithium doped film, so yes these features are still present.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"18 °20 and 36 °20.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Spinel Li₁₋ₓMn₂O₄ reflections (e.g., 111, 311, 400), Pyrolusite β-MnO₂ reflections (e.g., 011, 020, 100, 200), Impurity Li₂₋𝑧MnO₂ reflections (e.g., 100, 012), Si substrate reflection at 33.0° in θ−2θ\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Li₂₋𝑧MnO₂ impurity phase indicates lithium-rich regions formed during intercalation, which can affect the uniformity, phase composition, and electrochemical performance of the final Li₁₋ₓMn₂O₄ material.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both spectra show different planes of the samples. °2Θχ represents the in-plane and °2Θ represents the out-of-plane.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of cycles increases, lower peaks in quantity and intensity can be observed.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The XRD measurements were conducted in two geometries: in-plane 2θχ and out-of-plane θ−2θ. This dual approach allows identification of reflections in different crystallographic orientations, providing a more complete picture of the crystal structure and phase composition. Backgrounds were subtracted, and graphs were shifted to clearly visualize overlapping peaks.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Li₁₋ₓMn₂O₄.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The reflections match with Li1−xMn2O4 and β-MnO2.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Two samples consist of \\n1. 10 cycles of Li \\n2. 50 cycles of Li\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Disappearance / Consumption. The red-labeled peaks (e.g., 011, 020) decrease significantly in intensity or disappear entirely, indicating that the original rutile β-MnO₂ crystal structure is being consumed and transformed into the new lithiated spinel phase.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The appearance of the Spinel phase, evidenced by the (111) and (440) reflections, confirms the formation of a 3D interconnected network of 8a tetrahedral sites. This allows for isotropic lithium diffusion, unlike the blocked 1D channels of the original Rutile structure, enhancing the battery's power density.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The β-MnO₂ reflections persist but weaken, while Li₁₋ₓMn₂O₄ spinel reflections emerge—(111), (131), and (440) in-plane; (400) out-of-plane. At these low lithium concentrations (x < 0.5), the samples are mixtures of both phases.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Panel (a) uses in-plane 2θχ geometry probing planes parallel to the substrate; panel (b) uses out-of-plane θ-2θ geometry probing planes perpendicular to the substrate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"To improve visual separation between multiple stacked traces.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The simultaneous presence of both phases indicates an incomplete or heterogeneous transformation, where lithiation proceeds through regions of the material rather than uniformly converting the entire structure. This suggests diffusion-limited or kinetically controlled lithiation, resulting in mixed structural domains with different local properties.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The peak at 37 °20χ is the biggest peak for all three eventhough they relate to different crystal orientations, making it hard to destinguish between the three of them.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectra for pristine MnO2 and 10 lithium cycles doped MnO2 show the exact same peaks, though with different intensities. The different intensities are likely not related to the structure of the film so it is likely that there is no lithium incorporation.\"}]}]","bbox":[{"panel_id":"a","x":29,"y":0,"width":446,"height":453},{"panel_id":"b","x":545,"y":0,"width":438,"height":452}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":983,"height":455,"image_format":"jpeg","image_sha256":"c1e4d6856b572afcda42b4cf05644b3a6be28ba4698a35305088340cbeab7ab2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_figure_5.jpg","caption":"Figure 5. XRD (a) $2\\theta_{\\chi}$ and (b) $\\theta -2\\theta$ measurements of the samples $100\\mathrm{cLi - MnO}_2 - 300\\mathrm{cLi - MnO}_2$ . The reflections are assigned to $\\mathrm{Li}_{1 - x}\\mathrm{Mn}_2\\mathrm{O}_4$ and $\\beta -\\mathrm{MnO}_2$ . An impurity phase $\\mathrm{Li}_{2 - z}\\mathrm{MnO}_2$ is marked with an asterisk. The insets clarify the measurement geometries. The graphs are shifted and the backgrounds have been subtracted.","id":"train/atomic-layer-deposition/experimental-usecase/38/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/38/figure_5","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The 2θχ XRD patterns of 100cLi–MnO₂, 200cLi–MnO₂, and 300cLi–MnO₂ show dominant reflections indexed to the lithiated spinel-like phase Li₁−xMn₂O₄, including the (111), (131), and (440) planes at ~18°, ~36–37°, and ~65–66°, respectively. With increasing cycle count, these Li₁−xMn₂O₄ peaks remain clearly resolved and comparable in relative intensity.\"},{\"panel_id\":\"b\",\"text\":\"The θ–2θ XRD patterns highlight surface-normal diffraction features of the same samples, with pronounced “lithiated phase” peaks appearing near ~18° and ~35°, along with Li₁−xMn₂O₄ (400) reflections near ~44.5°. Residual β-MnO₂ is observed through the (200) reflection around ~40–41°, most clearly in the 100cLi–MnO₂ sample.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ Position | (hkl) | 300cLi-MnOₓ | 200cLi-MnOₓ | 100cLi-MnOₓ |\\n|-------------|-------|-------------|-------------|-------------|\\n| ~18 | (111) | Yes | Yes | Yes |\\n| ~36 | (131) | Yes | Yes | Yes |\\n| ~65 | (440) | Yes | Yes | Yes |\\n| ~50 | * | Yes | Yes | Yes |\"},{\"panel_id\":\"b\",\"text\":\"| 2θ Position | Phase / (hkl) | 300cLi-MnO₂ | 200cLi-MnO₂ | 100cLi-MnO₂ |\\n|-------------|----------------------|-------------|-------------|-------------|\\n| ~22 | Lithiated phase | Yes | Yes | Yes |\\n| ~36 | Li₁₋ₓMn₂O₄ (400) | Yes | Yes | Yes |\\n| ~28 | β-MnO₂ (200) | No | No | Yes |\\n| ~32 | * | Yes | Yes | Yes |\\n| ~44 | Lithiated phase | Yes | Yes | Yes |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"°2Θχ represents the in-plane and °2Θ represent the out-of-plane (Θ-2Θ).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"From 17.7° to 17.1° and from 35.9° to 34.7°.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"LiₓMn₂O₄.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the number of lithium ALD cycles increases, so too does the Li content, which leads to changes in the crystalline phase. The reflection at around 42 °2θ, which corresponds to the beta-MnO2 phase, completely disappears when going from 100 to 200 ALD cycles even before the structure has reached stoichiometric LiMn2O4.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the concentration of lithium is increased, two reflections from the lithiated phase shift to lower 2θ\\nvalues \\n1. From 17.7° to 17.1° \\n2. From 35.9° to 34.7°\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The graphs are shifted and the backgrounds have been subtracted for ease of analysis\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 300cLi sample has a higher spinel fraction. Its Li₁₋ₓMn₂O₄ peaks (e.g., (400)) are more intense and sharper compared to the 200cLi sample, indicating greater crystallinity and phase formation.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Sharp, intense spinel peaks indicate a well-crystallized, phase-pure material. This correlates with stable lithium diffusion pathways, high structural integrity during cycling, and better overall capacity retention in a battery.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The lattice expands as more Li⁺ is incorporated, increasing d-spacing and shifting reflections to lower angles according to Bragg's law.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Not directly. The d-spacings show integer relationships suggesting multiples of a single reflection, but they don't match cubic spinel indexing. The authors propose that stress and microstrain distort the cubic structure in one dimension, breaking Fd3̄m symmetry.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Lithiated phase (left): ~18°\\n-Lithiated phase (right): ~35°\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 300cLi-MnO2 sample shows the most prominent lithiated phase.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The MnO2(200) peak is still visible for 100 lithium cycles, whereas 200 lithium cycles do not show this peak anymore indicating that there is a minimum.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Disappearance of β-MnO₂ reflections, Shift of lithiated-phase peaks to lower 2θ angles, Appearance of higher-order reflections at multiples of the fundamental peak, Indication of lattice expansion and one-dimensional distortion due to stress\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The XRD patterns show that at higher lithium concentrations (200cLi–MnO₂ and 300cLi–MnO₂), the β-MnO₂ phase disappears, indicating complete lithiation throughout the film thickness. The reflections of the lithiated phase shift systematically to lower angles, reflecting lattice expansion and possible one-dimensional distortion due to stress. Higher-order reflections further suggest the preservation of cubic symmetry with minor structural deformation. Together, these results indicate that lithium insertion significantly alters the phase composition while maintaining the overall crystal framework, though with some stress-induced distortion.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number lithium cycles increases, higher peaks can be observed.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At approximately 47°.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This can be achieved using either 100 or 300 cycles of lithium deposition, since this phase can be observed at 200 lithium cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With increasing lithium content, new diffraction peaks associated with LiₓMn₂O₄ become more prominent, while features associated with the original MnO₂ structure diminish, indicating a gradual phase transformation driven by lithium insertion.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Li intercalation confirmed, Spinel phase formation, Battery electrode relevance\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The in-plane 2θχ and out-of-plane θ−2θ measurements of the samples 100cLi−MnO2, 200cLi-MnO2, 300cLi−MnO2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They shift to lower 2θ values as lithium concentration increases.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The higher-angle reflection has half the d-spacing of the lower-angle reflection.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"in the samples 200cLi−MnO2 and 300cLi−MnO2, lithium has penetrated throughout the whole film thickness. These samples do not anymore have the β-MnO2 phase in the XRD patterns. The reflections from β-MnO2 disappear even before the structure has reached the stoichiometric LiMn2O4 composition.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The β-MnO₂ peaks diminish while the Li₁₋ₓMn₂O₄ spinel peaks grow stronger. This shows the film is progressively transforming from the initial MnO₂ phase into a lithium manganese oxide spinel structure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The impurity phase appears strongest in the 100cLi sample and diminishes thereafter. This suggests it is an intermediate phase that is consumed as lithiation proceeds toward the more stable Li₁₋ₓMn₂O₄ spinel.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The β-MnO₂ reflections disappear completely, indicating full transformation to the Li₁₋ₓMn₂O₄ spinel phase\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"An impurity reflection at ~47.4°, attributed to a lithium-rich Li₂₋ᵤMnO₂ phase.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The coexistence of Li₁−xMn₂O₄ and β-MnO₂ reflections indicates incomplete or spatially heterogeneous lithiation. This suggests that some regions of the material have transformed into the lithiated spinel-like phase, while others retain the original β-MnO₂ structure. Such phase coexistence points to limitations in lithium penetration, reaction kinetics, or structural accessibility during cycling.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Impurity phases can reduce electrochemically active material fraction.\\n-They may introduce structural instability during cycling.\\n-Phase impurities can affect capacity retention and voltage behavior.\\n-Identifying impurities helps optimize processing and cycling conditions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Six layers are passed through.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The films look quite alike, meaning there crystal structure is roughly the same, however the 200 cLi-MnO2 sample seems to have a defect around 47 °20.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":29,"y":0,"width":446,"height":453},{"panel_id":"b","x":545,"y":0,"width":438,"height":452}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":983,"height":458,"image_format":"jpeg","image_sha256":"f96dde812c9c0966504990cb7b86f47ef80762b59203922f7b8516c08804545e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_figure_7.jpg","caption":"Figure 7. Comparison of (a) Mn L-edge and (b) O K-edge XANES measured at an incident angle of $45^{\\circ}$ . (c) Mn L-edge XANES and (d) O K-edge XANES of the $\\mathrm{MnO_2}$ sample measured at incident angles of $0.5^{\\circ}$ , $1^{\\circ}$ , and $45^{\\circ}$ . (e) Mn L-edge XANES and (f) O K-edge XANES of the $300\\mathrm{cLi - MnO_2}$ sample measured at incident angles of $0.5^{\\circ}$ , $1^{\\circ}$ , and $45^{\\circ}$ . A higher incident angle probes deeper into the film as schematically shown on the right. The graphs have been rescaled.","id":"train/atomic-layer-deposition/experimental-usecase/38/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/38/figure_7","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"},{"panel_id":"d","label":"stacked spectra chart"},{"panel_id":"e","label":"stacked spectra chart"},{"panel_id":"f","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Mn L-edge XANES at 45° shows clear L₃ and L₂ features for MnO₂ and lithiated samples. Marker lines indicate Mn³⁺ and Mn⁴⁺ reference positions. With increasing lithiation (100c → 300c), the main L₂ peak shifts slightly toward the Mn³⁺ side. This points to partial reduction of Mn upon lithiation.\"},{\"panel_id\":\"b\",\"text\":\"O K-edge spectra at 45° show a main low-energy peak and a higher-energy shoulder. The lithiated samples track closer to the MnO₂ reference but show subtle intensity changes near the Mn³⁺ marker. These changes are consistent across 100c, 200c, and 300c samples. The overall lineshape suggests modified Mn–O hybridization after lithiation.\"},{\"panel_id\":\"c\",\"text\":\"Mn L-edge spectra of MnO₂ collected at 0.5°, 1°, and 45° show angle-dependent intensity changes. The surface-sensitive spectra (0.5°) emphasize Mn³⁺-related features more strongly than the bulk-sensitive 45° scan. Peak positions remain fixed, but relative intensities change. This indicates a more reduced Mn state near the surface.\"},{\"panel_id\":\"d\",\"text\":\"O K-edge spectra of MnO₂ also vary with incident angle. The low-energy peak becomes relatively stronger at shallow angles. This suggests altered oxygen coordination or bonding near the surface. Bulk-sensitive spectra show a more MnO₂-like response.\"},{\"panel_id\":\"e\",\"text\":\"Mn L-edge spectra of 300cLi–MnO₂ show similar angle-dependent behavior but with stronger Mn³⁺ contributions overall. Even at 45°, the Mn³⁺ marker region is more pronounced than in pristine MnO₂. This indicates that lithiation affects both surface and bulk Mn states.\"},{\"panel_id\":\"f\",\"text\":\"O K-edge spectra of 300cLi–MnO₂ show enhanced low-energy features at shallow angles. The surface-sensitive scans differ clearly from the bulk response. Compared to MnO₂, the lithiated film shows stronger surface modification of the O-related states.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Trace | Feature | Energy (eV) |\\n|---|---|---|\\n| (all traces) | Mn3+ marker line | ~641.1 |\\n| (all traces) | Mn4+ marker line | ~644.5 |\\n| MnO2 (solid black) | LII main peak (maximum) | ~654.6 |\\n| 100cLi–MnO2 (green) | LII main peak (maximum) | ~654.4 |\\n| 200cLi–MnO2 (orange) | LII main peak (maximum) | ~654.2 |\\n| 300cLi–MnO2 (yellow) | LII main peak (maximum) | ~654.0 |\\n| LiMn2O4 ref. (dashed) | LII main peak (maximum) | ~655.5 |\\n| Mn2O3 ref. (dash-dot) | LII main peak (maximum) | ~653.6 |\\n| MnO2 ref. (dotted) | LII main peak (maximum) | ~654.8 |\"},{\"panel_id\":\"b\",\"text\":\"| Trace | Feature | Energy (eV) |\\n|---|---|---|\\n| (all traces) | Mn4+ marker line (left) | ~529.4 |\\n| (all traces) | Mn3+ marker line (center) | ~531.1 |\\n| (all traces) | Mn4+ marker line (right) | ~531.9 |\\n| MnO2 (solid black) | main peak (left maximum) | ~529.5 |\\n| MnO2 (solid black) | shoulder/peak (right) | ~532.0 |\\n| 100cLi–MnO2 (green) | main peak (left maximum) | ~529.6 |\\n| 100cLi–MnO2 (green) | shoulder/peak (right) | ~532.0 |\\n| 200cLi–MnO2 (orange) | main peak (left maximum) | ~529.6 |\\n| 200cLi–MnO2 (orange) | shoulder/peak (right) | ~532.0 |\\n| 300cLi–MnO2 (yellow) | main peak (left maximum) | ~529.7 |\\n| 300cLi–MnO2 (yellow) | shoulder/peak (right) | ~532.0 |\"},{\"panel_id\":\"c\",\"text\":\"| Take-off angle | Feature | Energy (eV) |\\n|---|---|---|\\n| (all angles) | Mn3+ marker line | ~641.1 |\\n| (all angles) | Mn4+ marker line | ~644.5 |\\n| 45° | LIII main peak (maximum) | ~641.8 |\\n| 1° | LIII main peak (maximum) | ~641.8 |\\n| 0.5° | LIII main peak (maximum) | ~641.8 |\"},{\"panel_id\":\"d\",\"text\":\"| Take-off angle | Feature | Energy (eV) |\\n|---|---|---|\\n| (all angles) | Mn4+ marker line (left) | ~529.4 |\\n| (all angles) | Mn3+ marker line (center) | ~531.1 |\\n| (all angles) | Mn4+ marker line (right) | ~531.9 |\\n| 45° | main peak (left maximum) | ~529.5 |\\n| 45° | shoulder/peak (right) | ~532.0 |\\n| 1° | main peak (left maximum) | ~529.5 |\\n| 1° | shoulder/peak (right) | ~532.0 |\\n| 0.5° | main peak (left maximum) | ~529.5 |\\n| 0.5° | shoulder/peak (right) | ~532.0 |\"},{\"panel_id\":\"e\",\"text\":\"| Take-off angle | Feature | Energy (eV) |\\n|---|---|---|\\n| (all angles) | Mn3+ marker line | ~641.1 |\\n| (all angles) | Mn4+ marker line | ~644.5 |\\n| 45° | LIII main peak (maximum) | ~641.8 |\\n| 1° | LIII main peak (maximum) | ~641.8 |\\n| 0.5° | LIII main peak (maximum) | ~641.8 |\"},{\"panel_id\":\"f\",\"text\":\"| Take-off angle | Feature | Energy (eV) |\\n|---|---|---|\\n| (all angles) | Mn4+ marker line (left) | ~529.4 |\\n| (all angles) | Mn3+ marker line (center) | ~531.1 |\\n| (all angles) | Mn4+ marker line (right) | ~531.9 |\\n| 45° | main peak (left maximum) | ~529.6 |\\n| 45° | shoulder/peak (right) | ~532.0 |\\n| 1° | main peak (left maximum) | ~529.6 |\\n| 1° | shoulder/peak (right) | ~532.0 |\\n| 0.5° | main peak (left maximum) | ~529.6 |\\n| 0.5° | shoulder/peak (right) | ~532.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All the samples, even MnO2, show Mn3+ features on the surface of the film in both the Mn L-edge and in the O K-edge XANES. These features can be exhibited because of the surface contamination or oxygen vacancies that result in a reduced octahedral symmetry of oxygen atoms at the surface. The 300cLi−MnO2 sample also has an additional resonance at around 532 eV in the O K-edge XANES (f). On the basis of the peak shape, the manganese and oxygen atoms do not form an octahedron. The sample may have carbon\\ncontamination because according to the literature the K-edge of oxygen bonded to carbon has features similar to that of the surface of the 300cLi−MnO2 sample.45 However, because TOF-ERDA shows a low carbon content, the odd fine structure could be a result of oxygen vacancies on the very surface of the film.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The L₂ peak shifts slightly toward lower energy with increasing lithiation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The oxidation state of manganese changes from Mn4+ to more Mn3+.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of lithium cycles increases, the Mn4+ peak at lower energy values disappears.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Mn³⁺ features are more pronounced at low incident angles (surface-sensitive) and less intense at 45° (bulk-sensitive).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"0.5°,1°,45°\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Oxygen 2p hybridization with Mn⁴⁺ states (~529 eV) and Mn³⁺ states (~532 eV).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The measured spectrum overlaps with the literature value indicating that it is correct.\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"45° , The schematic shows that higher incident angles penetrate deeper into the film, whereas grazing angles (0.5°) probe only the top surface.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Non-uniform (gradient) structure. The lithiation is not uniform through the film. The near-surface region is highly reduced and lithium-rich, dominated by Mn³⁺, whereas the deeper bulk remains relatively oxidized and lithium-poor, retaining more Mn⁴⁺. This indicates a diffusion-limited lithiation process with a concentration gradient from the surface toward the bulk.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Indicates bulk reduction, not only surface effects\\n-Suggests lithiation penetrates through the film\\n-Can influence electronic conductivity\\n-May affect long-term cycling stability\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The data shows more Mn4+ in the bulk, indicating that there is less lithium deeper in the film.\"}]},{\"panel_id\":\"f\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Graphs showing the peaks at lower energy values reveal more significant changes, allowing Mn+4 and Mn+3 to be identified more clearly.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Depth-dependent chemistry reveals if lithiation is uniform. A homogeneous film ensures consistent electrochemical activity across its thickness, leading to better capacity utilization and stability. A graded or surface-only lithiated film would lead to uneven stress, poor rate performance, and faster degradation during battery cycling.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mostly yes. Both surface and bulk show similar Mn³⁺/Mn⁴⁺ ratios in panels (e) and (f), though the surface has an additional O K-edge feature at ~532 eV possibly from surface oxygen vacancies.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The divergence between shallow- and high-angle spectra indicates depth-dependent modification of oxygen electronic states. Surface regions show stronger deviations from the bulk response. This reflects altered Mn–O bonding near the surface after lithiation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reference mostly overlaps with the spectrum deeper in the film, so in the bulk.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300cLi-MnO2.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The measurements show that even pure MnO₂ exhibits Mn³⁺ features at the surface, likely due to oxygen vacancies or surface contamination. For lithiated films like 300cLi–MnO₂, these Mn³⁺ features persist and an additional resonance appears in the O K-edge spectrum at ~532 eV, suggesting deviations from ideal octahedral coordination. Comparing spectra at different incident angles demonstrates the difference between surface-sensitive and bulk-sensitive measurements, highlighting that the bulk retains more regular octahedral coordination while the surface shows distortions and defects. Overall, XANES confirms that lithium insertion and surface effects modify both the electronic and local structural environment of manganese and oxygen.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both the Mn L-edge and the O K-edge XANES of the 100cLi−MnO2−300cLi−MnO2 samples have features that\\nshow the presence of Mn3+ in the film bulk (images a and b)\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Different angles probe different depths—grazing angles (0.5°, 1°) are surface-sensitive, while 45° probes the bulk of the film.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Even pristine MnO₂ shows Mn³⁺ features at the surface (0.5° and 1° incidence) while the bulk (45°) is predominantly Mn⁴⁺. This surface reduction may result from oxygen vacancies or surface contamination.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Mn³⁺ peaks in Mn L-edge spectra, Additional resonance at ~532 eV in O K-edge spectra, Slight variations in pre-edge fine structure compared to references, Reduced intensity of certain Mn L-edge and O K-edge peaks at low incident angles\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The pure MnO₂ film likely shows little spectral change with angle, indicating a homogeneous Mn⁴⁺ state throughout. In contrast, the 300cLi film will show significant spectral variation with angle, revealing an inhomogeneous structure where the lithiated (Mn³⁺-rich) surface layer differs from the underlying material.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lower incident angles increase surface sensitivity because the X-ray penetration depth is reduced before significant attenuation occurs. As a result, spectra collected at 0.5° emphasize near-surface electronic states. Higher angles such as 45° probe deeper into the film and are more representative of bulk behavior.\"}]}]","bbox":[{"panel_id":"a","x":19,"y":2,"width":447,"height":307},{"panel_id":"b","x":478,"y":1,"width":641,"height":307},{"panel_id":"c","x":3,"y":315,"width":360,"height":305},{"panel_id":"d","x":384,"y":312,"width":489,"height":310},{"panel_id":"e","x":18,"y":634,"width":349,"height":297},{"panel_id":"f","x":382,"y":623,"width":486,"height":308}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":1122,"height":934,"image_format":"jpeg","image_sha256":"ced761ede1291ded2477b96d07231f34a36228f94652b0b1e98082b70c6c54c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_figure_8.jpg","caption":"Figure 8. Mn $\\mathrm{L_{III}}$ -edge XANES of the samples (solid lines) compared to the linear combinations of $\\mathrm{Mn^{4 + }}$ and $\\mathrm{Mn^{3 + }}$ references (dotted lines). The graphs have been rescaled.","id":"train/atomic-layer-deposition/experimental-usecase/38/figure_8","sample_id":"atomic-layer-deposition/experimental-usecase/38/figure_8","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Mn L₃-edge XANES spectra of MnO₂ and lithiated samples (10c–300c Li–MnO₂) are compared with linear-combination fits built from Mn⁴⁺ and Mn³⁺ references. The close agreement between solid (measured) and dotted (LCF) curves indicates that the spectra are well described by mixtures of Mn³⁺ and Mn⁴⁺ states. With increasing lithiation, spectral weight near the Mn³⁺ marker (~641 eV) increases relative to the Mn⁴⁺ region (~644 eV), consistent with progressive Mn reduction. The labeled 100/0, 80/20, and 60/40 mixtures illustrate how changing Mn⁴⁺/Mn³⁺ ratios reproduce the observed evolution.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Mn⁴⁺/Mn³⁺ Ratio | Energy Range (eV) | Key Features |\\n|---------------|-----------------|--------------------|--------------|\\n| MnO₂ | 100/0 | 638–650 | Strong Mn⁴⁺ peak near 644 eV |\\n| 10cLi-MnO₂ | ~100/0 | 638–650 | Similar to MnO₂, slight broadening |\\n| 50cLi-MnO₂ | 80/20 | 638–650 | Mn³⁺ peak emerges near 642 eV |\\n| 100cLi-MnO₂ | ~60/40 | 638–650 | Mn³⁺ peak more pronounced |\\n| 200cLi-MnO₂ | Lower Mn⁴⁺ | 638–650 | Mn³⁺ dominant, Mn⁴⁺ reduced |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The figure displays the amount of Mn+4 and M+3 in the film bulk.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As the number of lithium cycles increases, the amount of Mn+4 decreases, while the amount of Mn+3 increases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300cLi-MnO2.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It seems that, a higher amounts of lithium cycles, the peaks are closer in energy values.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Energies above 644 eV show the most deviation of the reference data, indicating that the model does not fit the data correctly there.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ratio of the Mn4+ and Mn3+ oxidation state are a measure for determining the lithium content.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The lowest measured ratio is 60/40.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10cLi-MnO2\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The Mn³⁺ contribution increases with increasing lithiation (cycle number), indicating progressive Mn reduction.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mn³⁺ commonly introduces Jahn–Teller activity in octahedral coordination, which can elongate or distort MnO₆ units to lower electronic degeneracy. As Mn³⁺ fraction rises, the distribution of Mn–O bond lengths broadens, and local symmetry decreases, linking oxidation-state change (electronic structure) to structural distortion at the atomic scale.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Enables comparison across samples and processing conditions\\n-Provides a metric linked to redox capacity and stability\\n-Helps correlate spectroscopy with electrochemical behavior\\n-Supports model-based interpretation rather than visual inference\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"By comparing experimental L_III-edge spectra to linear combinations of Mn⁴⁺ and Mn³⁺ reference spectra and finding the best match.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"MnO₂ through 50cLi-MnO₂ show ~100% Mn⁴⁺. At 100-200 cycles, the ratio shifts to ~80/20 Mn⁴⁺/Mn³⁺. At 300 cycles (near-stoichiometric LiMn₂O₄), it reaches ~60/40, consistent with the expected 1:1 ratio for LiMn₂O₄.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Spectral features characteristic of Mn³⁺ (~641 eV) and Mn⁴⁺ (~644 eV) oxidation states.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Nearly. The 60/40 ratio is close to the expected 50/50 for Li₁.₀Mn₂O₄, consistent with the measured Li₁.₁Mn₂O₄ composition from TOF-ERDA.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Intensity shift: The ~644 eV peak (characteristic of Mn⁴⁺) decreases, while the ~641 eV peak (characteristic of Mn³⁺) increases.\\nValence: This indicates a gradual reduction in the average manganese oxidation state from approximately +4 toward +3 with progressive lithiation.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The “300cLi” sample is at higher risk. Its spectrum exhibits the strongest peak at ~641 eV, corresponding to the highest relative concentration of Mn³⁺ ions. Since Mn³⁺ induces Jahn–Teller distortion, this sample experiences greater lattice strain, increasing the likelihood of mechanical degradation and capacity fading compared to the “10cLi” sample, which contains significantly less Mn³⁺\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Drop in Mn⁴⁺: 40 percentage points. The surface Mn⁴⁺ concentration decreases from 100% to 60%, indicating that 40% of surface manganese ions have been reduced from Mn⁴⁺ to Mn³⁺.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The dotted fit closely matches the solid experimental spectrum, indicating an excellent agreement. This implies that the surface manganese chemistry can be accurately described as a binary mixture of Mn⁴⁺ and Mn³⁺ oxidation states, with no significant contributions from other oxidation states (such as Mn²⁺) or additional phases within the resolution of the XANES measurement.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The reference lines are linear combinations of Mn4+ and Mn3+\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the Mn LIII-edge XANES \\n1. Mn 4+ has energy of 644 eV\\n2. Mn 3+ has energy of 641 eV\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 10cLi−MnO2 and 50cLi−MnO2 samples resemble the reference. The 100cLi−MnO2 and 200cLi−MnO2 samples match the reference calculated\\nwith the Mn4+/Mn3+ ratio of 80%/20%. The 300cLi−MnO2 sample resembles mostly the reference where the ratio of Mn4+/Mn3+ is 60%/40%, which is in line with the expectation for this sample with the almost stoichiometric composition of Li1.1Mn2O4.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With the progressive incorporation of lithium, manganese reduces from a pure +4 oxidation state to a mixed state containing significant amounts of +3. This is supported by visual trend, where the spectral peaks for pure manganese oxide closely match the theoretical model for 100% Mn (4+). Upon cycling, the peak for Mn (4+) becomes smaller, and the peak for Mn (3+) becomes taller. The spectra of highly lithiated samples better match the theoretical model for mixed Mn (4+)/Mn(3+) compositions.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"From 2p to 3d orbitals (L3-edge).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The shift of the absorption intensity from the higher energy peak (~644 eV) to the lower energy peak (~641 eV).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"+ 3.6, based on the 60/40 Mn(4+)/Mn(3+) ratio.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectra show systematic shifts and intensity changes near the absorption edge, indicating a progressive reduction in manganese oxidation state as lithium content increases, moving from Mn⁴⁺-dominant toward Mn³⁺-rich compositions.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mn³⁺ and Mn⁴⁺.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Li–Mn oxidation correlation, Electronic structure changes, Redox tuning relevance.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"MnO2, 10cLi-MnO2, and 50cLi-MnO2.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"100% Mn4+ → MnO2, 10cLi-MnO2, 50cLi-MnO2, 80% Mn4+ / 20% Mn3+ → 100cLi-MnO2, 200cLi-MnO2, 60% Mn4+ / 40% Mn3+ → 300cLi-MnO2\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Mn4+/Mn3+ ratio directly affects the electrochemical performance and stability of Li-MnO2 cathodes. Samples with higher Mn4+ content are more oxidized and can provide higher voltage, while increasing Mn3+ content enhances lithium accommodation but may lead to structural distortions. By analyzing these ratios, researchers can optimize Li-MnO2 compositions to balance capacity, cycling stability, and material durability for efficient battery performance.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The Mn4+/Mn3+ ratio decreases as Li content increases, indicating a partial reduction of Mn4+ to Mn3+.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":425,"height":389}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":425,"height":389,"image_format":"jpeg","image_sha256":"48a5eef28924b012a042249d594960c5f4ce1a0cddb9ca33e9b5f5630b2b50c8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_38_figure_9.jpg","caption":"Figure 9. XRD diffractograms of $200\\mathrm{cLi - MnO_2 - 600}$ a $2\\theta_{\\chi}$ and (b) $\\theta -2\\theta_{j}$ and $300\\mathrm{cLi - MnO_2 - 600}$ c $2\\theta_{\\chi}$ and (d) $\\theta -2\\theta_{j}$ compared to the corresponding unannealed samples. The reflections are assigned to $\\mathrm{LiMn}_2\\mathrm{O}_4$ An impurity phase $\\mathrm{Li}_{2 - x}\\mathrm{MnO}_2$ is marked with an asterisk. The graphs are rescaled and have subtracted backgrounds.","id":"train/atomic-layer-deposition/experimental-usecase/38/figure_9","sample_id":"atomic-layer-deposition/experimental-usecase/38/figure_9","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"},{"panel_id":"d","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The 2θχ XRD pattern compares annealed 200cLi–MnO₂–600 with the unannealed sample. After annealing, clear LiMn₂O₄ reflections appear at ~18.7°, ~36–38°, and ~64–67°. These peaks are sharper and better defined than in the unannealed trace. A weak extra peak near ~48.6° is marked with an asterisk, indicating a minor impurity.\"},{\"panel_id\":\"b\",\"text\":\"The θ–2θ scan highlights out-of-plane reflections for 200cLi–MnO₂ before and after annealing. The annealed sample shows strong LiMn₂O₄ peaks, along with labeled “lithiated phase” features near ~17° and ~35°. Residual MnO₂ peaks at ~22° and ~42° are still present. This shows that annealing promotes lithiated phase formation but does not fully remove MnO₂.\"},{\"panel_id\":\"c\",\"text\":\"The 2θχ diffractograms compare annealed and unannealed 300cLi–MnO₂. In the annealed sample, LiMn₂O₄ peaks at (111), (131)/(222), (440), and (351) are clearly visible. These reflections are stronger and cleaner than in the unannealed pattern. This indicates improved crystallinity of the lithiated phase after annealing.\"},{\"panel_id\":\"d\",\"text\":\"The θ–2θ patterns for 300cLi–MnO₂ show strong lithiated-phase peaks after annealing. LiMn₂O₄ reflections near ~18.7° and ~35.6° dominate the annealed trace. A small impurity peak, marked by an asterisk near ~33°, is also visible. The unannealed sample shows weaker and broader peaks, pointing to poorer structural order.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample (trace) | Peak / feature label | 2θ (°) |\\n|---|---|---|\\n| 200cLi–MnO2–600 (top) | LiMn2O4 (111) | ~18.7 |\\n| 200cLi–MnO2–600 (top) | LiMn2O4 (131) | ~36.6 |\\n| 200cLi–MnO2–600 (top) | LiMn2O4 (222) | ~38.4 |\\n| 200cLi–MnO2–600 (top) | LiMn2O4 (440) | ~64.2 |\\n| 200cLi–MnO2–600 (top) | LiMn2O4 (351) | ~66.7 |\\n| 200cLi–MnO2 (bottom) | * (unassigned peak) | ~48.6 |\\n| 200cLi–MnO2 (bottom) | dominant peak (same region as ~36–39°) | ~38.0 |\\n| 200cLi–MnO2 (bottom) | higher-angle peak (same region as ~64–67°) | ~66.7 |\"},{\"panel_id\":\"b\",\"text\":\"| Sample (trace) | Peak / feature label | 2θ (°) |\\n|---|---|---|\\n| 200cLi–MnO2–600 (top) | Lithiated phase (left) | ~17.1 |\\n| 200cLi–MnO2–600 (top) | LiMn2O4 (111) | ~18.7 |\\n| 200cLi–MnO2–600 (top) | MnO2 (100) | ~22.3 |\\n| 200cLi–MnO2–600 (top) | strong unlabeled peak | ~32.9 |\\n| 200cLi–MnO2–600 (top) | Lithiated phase (right) | ~34.6 |\\n| 200cLi–MnO2–600 (top) | LiMn2O4 (311) | ~35.6 |\\n| 200cLi–MnO2–600 (top) | MnO2 (200) | ~42.2 |\\n| 200cLi–MnO2 (bottom) | LiMn2O4 (111) peak | ~18.7 |\\n| 200cLi–MnO2 (bottom) | strong peak (same region as ~35–36°) | ~35.6 |\"},{\"panel_id\":\"c\",\"text\":\"| Sample (trace) | Peak / feature label | 2θ (°) |\\n|---|---|---|\\n| 300cLi–MnO2–600 (top) | LiMn2O4 (111) | ~18.7 |\\n| 300cLi–MnO2–600 (top) | LiMn2O4 (131) | ~36.6 |\\n| 300cLi–MnO2–600 (top) | LiMn2O4 (222) | ~38.4 |\\n| 300cLi–MnO2–600 (top) | LiMn2O4 (440) | ~64.2 |\\n| 300cLi–MnO2–600 (top) | LiMn2O4 (351) | ~66.7 |\\n| 300cLi–MnO2 (bottom) | dominant peak (same region as ~36–39°) | ~38.0 |\\n| 300cLi–MnO2 (bottom) | higher-angle peak (same region as ~64–67°) | ~66.7 |\"},{\"panel_id\":\"d\",\"text\":\"| Sample (trace) | Peak / feature label | 2θ (°) |\\n|---|---|---|\\n| 300cLi–MnO2–600 (top) | Lithiated phase (left) | ~17.1 |\\n| 300cLi–MnO2–600 (top) | LiMn2O4 (111) | ~18.7 |\\n| 300cLi–MnO2–600 (top) | * (unassigned peak) | ~32.6 |\\n| 300cLi–MnO2–600 (top) | strong unlabeled peak | ~32.9 |\\n| 300cLi–MnO2–600 (top) | Lithiated phase (right) | ~34.6 |\\n| 300cLi–MnO2–600 (top) | LiMn2O4 (311) | ~35.6 |\\n| 300cLi–MnO2 (bottom) | LiMn2O4 (111) peak | ~18.7 |\\n| 300cLi–MnO2 (bottom) | strong peak (same region as ~35–36°) | ~35.6 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The out-of-plane (°2θ) have been analyzed.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200 cycles without annealing treatment.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300cLi−MnO2-600.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The beta-MnO2 phase.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After annealing at 600 °C for 10 min, the diffraction patterns of 200cLi−MnO2-600 and 300cLi−MnO2- 600 match better with the stoichiometric cubic LiMn2O4 reference (ICDD PDF 35-0782) than with the lithium deficient Li1−xMn2O4 reference\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"-Peak near ~17°\\n-Peak near ~35°\\n-Strengthened LiMn₂O₄ (111) reflection\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It could be that lithium diffuses to other regions upon annealing leading to more MnO2 crystals.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The annealed sample shows the impurity phase. The peaks related to the lithiated phase are also not present.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200cLi-MnO2 approximately at 40°, and 300cLi-MnO2 (annealed at 600 °C) approximately at 33°.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"XRD analysis reveals the crystal structure and phase purity of Li-MnO2 films. Annealing at 600 °C helps achieve a stoichiometric LiMn2O4 phase with well-defined reflections, which correlates with better lithium intercalation and electrochemical stability. Identifying residual MnO2 or impurity phases like Li2−zMnO2 allows researchers to optimize annealing conditions, ensuring improved capacity, cycling stability, and structural integrity in battery cathodes.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A peak at 32.6°, attributed to an impurity phase Li(2−z)MnO₂.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"(111) and (311).\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the 200cLi−MnO2-600 sample, the reflections of the MnO2 phase become visible again after annealing (Image b). Similar behavior was not noticed for the 300cLi−MnO2-600 sample. It had, however, an additional reflection at 32.6° (marked with an asterisk in d), which is thought to be caused by the earlier discussed impurity phase Li2−zMnO2\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Eliminating impurities and achieving high crystallinity ensures uniform electrochemical properties, stable lithium-ion pathways, and minimal parasitic reactions. This directly translates to higher capacity, better rate capability, and longer cycle life in a lithium-ion battery.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"An impurity reflection from the Li₂₋ᵤMnO₂ phase, identified by comparison with standard XRD reference patterns\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Dominant LiMn₂O₄ reflections indicate improved phase ordering along the surface-normal direction. This suggests that annealing enhances alignment or coherence of the lithiated phase. Such ordering is consistent with higher structural quality.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The LiMn2O4 (311) phase.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"(111), (131), (222), (440), (351) → Correspond to cubic LiMn2O4 structure, MnO2 reappeared reflections → Indicate residual or reformed MnO2 phase after annealing\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The spinel LiMn₂O₄ phase.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"β-MnO₂ to LiMn₂O₄ transformation, New diffraction peaks, Reduced β-MnO₂ reflections.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. LiMn2O4 (111) \\n2. LiMn2O4 (131)\\n3. LiMn2O4 (222)\\n4. LiMn2O4 (440)\\n5. LiMn2O4 (351)\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 200cLi sample has insufficient lithium for complete conversion; annealing causes Li redistribution, leaving some regions lithium-deficient and reverting to MnO₂.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They become stronger and more clearly resolved.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectra do not show any peaks labeled with an asterix, so there are no defects.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Annealing induces the transformation of β-MnO₂ to the spinel LiMn₂O₄ phase, as indicated by the emergence of new diffraction peaks and the reduction of β-MnO₂ reflections. This demonstrates increased crystallinity and lithium incorporation upon heat treatment.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 18.5°.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Annealing significantly sharpens and intensifies the LiMn₂O₄ spinel peaks while reducing the broad, disordered background. This indicates enhanced crystallinity and improved long-range atomic order within the films.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 300cLi sample shows more dramatic peak sharpening. This is likely because it starts closer to the stoichiometric LiMn₂O₄ composition, allowing annealing to more efficiently drive the crystallization of the phase-pure spinel structure.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The impurity phase (Li₂₋ₓMnO₂) is present in the unannealed samples but is eliminated after annealing. This indicates it is a metastable intermediate that decomposes or transforms into the more thermodynamically stable LiMn₂O₄ spinel phase upon heating.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Annealing enables lithium to overcome diffusion barriers, completing the transformation to stoichiometric cubic LiMn₂O₄ with sharper, better-indexed reflections. However, it also causes some phase separation, particularly in 200cLi-MnO₂-600 where β-MnO₂ reappears.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The in-plane reflections shift to angles matching the stoichiometric LiMn₂O₄ reference pattern, and additional reflections like (111), (222), and (351) become clearly visible.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The 2θχ geometry allows comparison of diffraction features that are less constrained by surface-normal orientation. This makes it suitable for assessing overall phase formation and crystallinity differences induced by annealing. It helps reveal sharpening and emergence of LiMn₂O₄ reflections.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The (111) and (222) both correspond to the same crystal phase.\"}]}]","bbox":[{"panel_id":"a","x":7,"y":0,"width":537,"height":400},{"panel_id":"b","x":585,"y":0,"width":536,"height":401},{"panel_id":"c","x":10,"y":450,"width":533,"height":397},{"panel_id":"d","x":592,"y":448,"width":529,"height":396}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/images/figure_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/38/Nieminen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":1122,"height":848,"image_format":"jpeg","image_sha256":"51ab2e65fa12cdd3177191d2ff182ae4dfe9f09274e30c45b978ca0686b336a3","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_4_fig4.jpg","caption":"Fig.4. XRD patterns of selected $\\mathrm{HfO_2}$ films grown on glass substrates. Growth temperatures are indicated by labels. Reflections are indexed as monoclinic $\\mathrm{HfO_2}$ . The film thicknesses are 170, 200, 132, and $101~\\mathrm{nm}$ for patterns counted from top to bottom.","id":"train/atomic-layer-deposition/experimental-usecase/4/fig4","sample_id":"atomic-layer-deposition/experimental-usecase/4/fig4","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays X-ray diffraction patterns of multiple HfO2 samples prepared at different temperatures, showing that growth of crystalline phase(s) does not occur below 200 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | °2Θ |\\n|---|---|\\n| 150 °C | |\\n| 200 °C | Peaks at 18, 35, 36 |\\n| 225 °C | Peaks at 18, 25, 28, 34, 35, 36, 39, 50, 51, 57, 60 |\\n| 300 °C | Peaks at 18, 25, 28, 34, 35, 36, 39, 50, 51, 57, 60, 76 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Borosilicate glass.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"150, 200, 225 and 300 °C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Monoclinic HfO2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As temperature increases, so too does the intensity of the refraction peaks. At 150 °C, the temperature is too low for crystallization to occur. This is why no refraction peaks were observed at this temperature. The refraction peaks appear at 200 °C and are strongest at 225 °C.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":2,"width":514,"height":346}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":516,"height":350,"image_format":"jpeg","image_sha256":"43b62497151cf64333cf858be7001c07903492196d05460d02b33f1213f0469d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_4_fig5.jpg","caption":"Fig.5. XRD patterns of selected $\\mathrm{HfO_2}$ films grown on silicon substrates. Growth temperatures are indicated by labels. Subscripts M, T, and O at indexed reflections denote monoclinic, tetragonal, and orthorhombic phases, respectively. The film thicknesses are 170, 150, 132, and $132\\mathrm{nm}$ for patterns counted from top to bottom.","id":"train/atomic-layer-deposition/experimental-usecase/4/fig5","sample_id":"atomic-layer-deposition/experimental-usecase/4/fig5","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a series of X-ray diffraction peaks of four HfO2 samples prepared on Si(100) at different temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | °2Θ |\\n|---|---|\\n| 200 °C | Peaks at 18, 25, 35, 36, 69 |\\n| 250 °C | Peaks at 18, 25, 28, 34, 35, 36, 39, 50, 51, 57, 60, 69 |\\n| 275 °C | Peaks at 18, 25, 28, 34, 35, 36, 39, 50, 51, 57, 60, 69 |\\n| 300 °C | Peaks at 25, 28, 34, 35, 36, 39, 50, 51, 57, 60, 76 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Silicon/Si(100).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200, 250, 275 and 300 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Similar to figure 4, as the temperature increases, so too does the intensity of the refraction peaks corresponding to monoclinic HfO2. At 300 °C, the nucleation density decreases compared to lower temperatures, which causes an overall decrease of the HfO2 refraction peaks.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Two metastable phases of HfO2, namely the tetragonal and orthorhombic phases.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":508,"height":365}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/images/fig5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/4/Kukli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":511,"height":367,"image_format":"jpeg","image_sha256":"3d5f0ae811eb5b789aa1afe109c6e82b3e2b69fa4f3b6dc1413215badb0db79b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_40_fig_4.jpg","caption":"FIG. 4. XRD patterns obtained from the TiN and Ti-Si-N films deposited by PEALD.","id":"train/atomic-layer-deposition/experimental-usecase/40/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/40/fig_4","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Stacked XRD patterns comparing TiN and Ti–Si–N films deposited by plasma-enhanced ALD. The TiN film exhibits clear polycrystalline TiN reflections with a dominant (200) orientation, whereas the Ti–Si–N film shows strongly suppressed and broadened TiN-related features, indicating a largely X-ray amorphous or nanocrystalline structure due to silicon incorporation.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample Name | Labeled Peak | 2θ (°) | Observed Intensity & Shape |\\n|-------------|--------------|--------|----------------------------|\\n| TiN PEALD | TiN(111) | ~36–37 | Low to moderate, sharp peak |\\n| | TiN(200) | ~42–43 | High, sharp peak (dominant orientation) |\\n| | Si substrate | ~55 | Very high, sharp peak |\\n| | TiN(220) | ~61–62 | Low, sharp peak |\\n| Ti–Si–N PEALD | TiN-related features | ~36–43 | Very weak, broad features |\\n| | Si substrate | ~55 | Very high, sharp peak |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Polycrystalline rock-salt TiN with strong (111), (200), and (220) peaks.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TiN(200) reflection.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Ti–Si–N film shows strongly weakened and broadened TiN-related features compared with the sharp, well-defined reflections in TiN. This indicates a substantial reduction in long-range crystalline order caused by silicon incorporation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":577,"height":574}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":581,"height":578,"image_format":"jpeg","image_sha256":"aac52662b65e72f55edafeebde9c22a3b783fbd1db72226bbd71bd6d2f161508","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_40_fig_6.jpg","caption":"FIG. 6. XPS peaks of (a) nitrogen $1s$ and (b) silicon $2p$ measured for Ti-Si-N films by PEALD.","id":"train/atomic-layer-deposition/experimental-usecase/40/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/40/fig_6","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This panel shows the N 1s XPS spectrum of Ti–Si–N. It contains Ti–N and Si–N bonding components.\"},{\"panel_id\":\"b\",\"text\":\"This panel shows the Si 2p XPS spectrum of Ti–Si–N. The peak matches Si–N bonding.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Peak assignment | Curve style | Binding energy (eV) | Relative intensity |\\n|-----------------|-------------|---------------------|-------------------|\\n| Ti–N bonding | Dash-dot | ~397.0 | High |\\n| Si–N bonding | Dashed | ~398.5 | Medium |\\n| Total N 1s | Solid | ~397.2 (envelope) | Total |\"},{\"panel_id\":\"b\",\"text\":\"| Peak assignment | Curve style | Binding energy (eV) | Chemical state |\\n|-----------------|-------------|---------------------|----------------|\\n| Si₃N₄-like | Solid | ~102.0 | Si–N bonding |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Peak deconvolution.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Nitrogen bonds to both titanium and silicon in the film. Each bonding environment shifts the binding energy slightly. Multiple components are therefore required to represent the spectrum.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Mixed bonding increases structural disorder. This disrupts diffusion pathways. It improves barrier performance.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Si–N bonding consistent with a Si₃N₄-like chemical environment.\"}]}]","bbox":[{"panel_id":"a","x":16,"y":1,"width":377,"height":364},{"panel_id":"b","x":4,"y":370,"width":390,"height":363}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":394,"height":736,"image_format":"jpeg","image_sha256":"003f26798440e6939991170979efb30efb759b542c4e371f39a7b93ca5b2f234","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_40_fig_8.jpg","caption":"FIG. 8. XRD patterns of $\\mathrm{Cu / PEALD}$ TiN $10 \\mathrm{nm} / \\mathrm{Si}$ and $\\mathrm{Cu / PEALD}$ Ti-Si-N $10 \\mathrm{nm} / \\mathrm{Si}$ as a function of annealing temperature.","id":"train/atomic-layer-deposition/experimental-usecase/40/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/40/fig_8","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XRD patterns of Cu/PEALD TiN (10 nm)/Si after annealing from 450 °C to 600 °C. Cu(111), Cu(200), and Cu(220) peaks grow with temperature. This shows loss of barrier stability at high temperature.\"},{\"panel_id\":\"b\",\"text\":\"XRD patterns of Cu/PEALD Ti–Si–N (10 nm)/Si from no annealing to 700 °C. Cu peaks appear later and grow more slowly than in TiN. This shows improved thermal stability of Ti–Si–N.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (degree) | Phase / Peak | Intensity |\\n|-------------|--------------|------------|\\n| ~43.3 | Cu(111) | strongest observed reflection |\\n| ~50.4 | Cu(200) | high |\\n| ~74.1 | Cu(220) | medium |\"},{\"panel_id\":\"b\",\"text\":\"| 2θ (degree) | Phase / Peak | Intensity |\\n|-------------|--------------|----------|\\n| ~43.3 | Cu(111) | strongest observed reflection |\\n| ~50.4 | Cu(200) | medium |\\n| ~74.1 | Cu(220) | low (no annealing) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increasing intensity of Cu(111), Cu(200), and Cu(220) reflections with annealing temperature indicates copper grain growth and diffusion through the TiN barrier. This suggests that the TiN layer loses its barrier functionality at elevated temperatures, allowing Cu atoms to penetrate and crystallize on the silicon substrate. The rapid peak emergence above 550 °C reflects limited thermal stability of the PEALD TiN barrier.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 550 °C and 600 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Copper diffusion becomes clearly evident between 550 °C and 600 °C.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The delayed appearance and reduced intensity of Cu diffraction peaks demonstrate that TiSiN effectively suppresses copper diffusion during high-temperature annealing. This indicates superior barrier performance compared to TiN, maintaining interfacial stability up to 700 °C. Such thermal robustness makes TiSiN more suitable for backend interconnect processes requiring high-temperature reliability.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":478,"height":511},{"panel_id":"b","x":2,"y":540,"width":474,"height":513}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/40/Park et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":480,"height":1056,"image_format":"jpeg","image_sha256":"8a7c33b93cfa175d59b049eabdc78bf2b94d8d13e693d0c37caccabe602cf54f","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_44_figure_4.jpg","caption":"Figure 4. X-ray diffraction patterns of ALD (a) PbTe thin films for 2000 cycles (sample # PbTe-10) and PbSe thin films for 4000 cycles (sample # PbSe-13) prepared at $170^{\\circ}\\mathrm{C}$ , respectively.","id":"train/atomic-layer-deposition/experimental-usecase/44/figure_4","sample_id":"atomic-layer-deposition/experimental-usecase/44/figure_4","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart is an XRD pattern plotting diffracted intensity (arbitrary units) versus 2θ, showing the characteristic reflections of PbSe ((200), (400), (220)) and PbTe ( (200), (400)) and the substrate Si peaks.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Measurement | Angle (2θ) | Intensity in 10^3 (arb.u) | hkl | Assignment |\\n|---|---|---|---|---|\\n|PbTe film for 2000 cycles |27.55 |15.3|200 | PbTe |\\n|PbTe film for 2000 cycles |32.89|1.7|-|Si|\\n|PbTe film for 2000 cycles |39.47|1.7|400|PbTe|\\n|PbTe film for 2000 cycles |56.85|2.33|220|PbTe|\\n|PbSe film for 2000 cycles|29.15|87.9|200| PbSe|\\n|PbSe film for 2000 cycles|32.95|1.39|-|Si|\\n|PbSe film for 2000 cycles|60.29|7.92|400|PbSe|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"PbSe appears to have higher crystallinity. Its XRD peaks are stronger and sharper than in PbTe sample. This indicates a larger fraction of well-ordered crystalline material.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"(200) crystallographic orientation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"All reflections are even, which is consistent with fcc.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"All reflections are even, which is consistent with fcc.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":661,"height":527}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/44/Zhang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"44","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":667,"height":533,"image_format":"jpeg","image_sha256":"a3daaac30cec9d38c99a11c3aa91bdef2f26a1d8f10b80cea2ea88c62e471330","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_45_figure_3.jpg","caption":"Figure 3. (Color online) Grazing incidence XRD spectra for a remote plasma ALD Pt film $29\\mathrm{mm}$ thickness),a thermal ALD Pt film $27~\\mathrm{nm}$ thickness),and a remote plasma ALD $\\mathrm{PtO_2}$ film $27~\\mathrm{nm}$ thickness).The Miller indexes of cubic Pt are indicated.","id":"train/atomic-layer-deposition/experimental-usecase/45/figure_3","sample_id":"atomic-layer-deposition/experimental-usecase/45/figure_3","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a comparison between the X-ray diffraction patterns of Pt (grown with either plasma or thermal ALD) and PtO₂.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (degrees) | Pt (plasma): intensity (a.u) | Pt (thermal): intensity (a.u) | PtO₂: intensity (a.u | hkl |\\n|---|---|---|---|---|\\n| 40.31 | 1.76 | 0.16 | 0 | 111 |\\n| 46.58 | 0.53 | 0 .86| 0 | 200 |\\n| 67.98 | 3.14 | 0.81 | 0 | 220 |\\n| 81.73 | 0.39 | 0.06 | 0 | 311 |\\n| 86.22 | 0.07 | 0 | 0 | 222 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1) Pt (plasma): highest crystallinity.\\n2) Pt (thermal): intermediate crystallinity.\\n3) PtO₂: lowest crystallinity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The XRD pattern does not show clear diffraction peaks. The absence of such peaks rules out a crystalline α or β modification. Therefore, the PtO₂ film is best described as predominantly amorphous or nanocrystalline.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"111 and 311\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":1,"y":3,"width":591,"height":472}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/45/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"45","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":597,"height":480,"image_format":"jpeg","image_sha256":"a922581bc7d1edb3aab3a2c01d9b118446e86d992ce11309984bcfad4a8ac6e9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_49_figure_2.jpg","caption":"Figure 2. XPS spectra of a) Mo 3d and b) S 2p for the $\\mathrm{MoS_2}$ films deposited on $\\mathrm{SiO_2}$ at varying temperatures. The different oxidation states and compounds are indicated by dashed lines.","id":"train/atomic-layer-deposition/experimental-usecase/49/figure_2","sample_id":"atomic-layer-deposition/experimental-usecase/49/figure_2","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents X-ray Photoelectron Spectroscopy (XPS) spectra of Molybdenum Disulfide (MoS₂) films deposited between 200 °C and 300 °C. – Mo 3d: At 200 °C, the spectrum shows a mixture of Mo⁶⁺ species (oxide or unreacted precursor, ~236 eV) and Mo⁴⁺ states characteristic of MoS₂ (~229/233 eV). As the deposition temperature increases to 250 °C and 275 °C, the spectra are dominated by a sharp Mo⁴⁺ doublet, indicating improved formation of stoichiometric MoS₂.\"},{\"panel_id\":\"b\",\"text\":\"– S 2p: Low-temperature films exhibit peak broadening toward higher binding energies (S⁰ or S₂²⁻), suggesting incomplete sulfidation. At higher temperatures, the spectra evolve into a clean S²⁻ doublet, confirming the formation of a well-defined MoS₂ lattice.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Mo 3d |\\n|---|---|\\n| 236 | Mo^{6+} |\\n| 232 | Mo^{4+} |\\n| 228 | 300 °C |\\n| 225 | 275 °C |\\n| 220 | 250 °C |\\n| 215 | 225 °C |\\n| 210 | 200 °C |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | S 2p |\\n|---|---|\\n| 166 | S^{0}/S^{2-} |\\n| 164 | S^{2-} |\\n| 162 | 300 °C |\\n| 160 | 275 °C |\\n| 158 | 250 °C |\\n| 156 | 225 °C |\\n| 154 | 200 °C |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The final step is transferring the sample into the XPS ultra-high vacuum chamber without air exposure. This is critical to prevent surface oxidation, which would distort the measured Mo and S chemical states and obscure the true film composition.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"300°C is preferable for purer MoS₂. The trade-off is the higher thermal budget, which may be incompatible with temperature-sensitive substrates or back-end-of-line (BEOL) integration in advanced chips.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing temperature reduces Mo⁶⁺ and increases Mo⁴⁺. The cause is more complete precursor decomposition and ligand removal at higher temperature, which minimizes oxygen incorporation and favors the formation of Mo-S bonds over Mo-O bonds.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies an optimal semiconductor band gap and high channel mobility. Stoichiometric MoS₂ has a well-defined band gap (~1.8 eV for monolayers) and minimal defect scattering from oxides or sulfur vacancies, enabling efficient transistor operation.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":6,"width":343,"height":500},{"panel_id":"b","x":343,"y":4,"width":293,"height":497}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/Shen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":636,"height":503,"image_format":"jpeg","image_sha256":"cb49e99aa49ac168cc88e9fc5d8608e3e69df1fb69c99106b194f7a86b908a20","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_49_figure_6.jpg","caption":"Figure 6. a) Secondary electron cutoff and b) Ti 2p spectra of TiNTs (violet) and $\\mathrm{MoS}_2 / \\mathrm{TiNTs}$ (red). Valence band spectra of c) TiNTs and d) $\\mathrm{MoS}_2/$ TiNTs. e) Band diagram of the $\\mathrm{MoS}_2 / \\mathrm{TiNTs}$ heterojunction.","id":"train/atomic-layer-deposition/experimental-usecase/49/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/49/figure_6","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"spectra chart"},{"panel_id":"d","label":"spectra chart"},{"panel_id":"e","label":"conceptual diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a detailed band alignment analysis of the MoS₂/TiNTs heterojunction using Ultraviolet Photoelectron Spectroscopy (UPS) and XPS valence band measurements.Work Function : The secondary electron cutoff shifts from 4.92 eV for TiNTs to 5.15 eV for the MoS₂/TiNTs heterostructure, indicating an increase in work function (ΔΦ = 0.23 eV) upon MoS₂ deposition.\"},{\"panel_id\":\"b\",\"text\":\"The Ti 2p₃/₂ core-level peak shifts by 0.20 eV toward higher binding energy in the heterostructure, indicating upward band bending at the TiO₂ interface due to electron transfer from TiNTs to MoS₂.\"},{\"panel_id\":\"c\",\"text\":\"The valence band maximum is located 3.1 eV below the Fermi level for TiNTs and shifts to 1.1 eV below the Fermi level after MoS₂ coating, reflecting a significant modification of the electronic structure.\"},{\"panel_id\":\"e\",\"text\":\"The constructed energy band diagram reveals a type-II (staggered) band alignment, where the conduction band minimum of TiO₂ lies below that of MoS₂, while the valence band maximum of MoS₂ lies above that of TiO₂. This alignment favors efficient charge separation, with electrons transferring from MoS₂ to TiO₂ and holes accumulating in MoS₂.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Kinetic Energy (eV) | Intensity (a.u.) |\\n|---|---|\\n| 4 | 0 |\\n| 5 | 4.92 |\\n| 6 | 5.15 |\\n| 7 | 0 |\"},{\"panel_id\":\"c\",\"text\":\"| Binding Energy (eV) | Intensity (a.u.) |\\n|---|---|\\n| 4 | 0 |\\n| 2 | 3.1 |\\n| 0 | 0 |\\n|-2 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Intensity (a.u.) |\\n|---|---|\\n| 468 | 0 |\\n| 466 | 0 |\\n| 464 | 0 |\\n| 462 | 0 |\\n| 460 | 0 |\\n| 458 | 0 |\\n| 456 | 0 |\"},{\"panel_id\":\"d\",\"text\":\"| Binding Energy (eV) | Intensity (a.u.) |\\n|---|---|\\n| 2 | 0 |\\n| 1 | 0 |\\n| 0 | 0 |\\n|-1 | 0 |\"},{\"panel_id\":\"e\",\"text\":\"| | VL | CBM | EF | VBM |\\n|---|---|---|---|---|\\n| TiO2 | 4.9 | 3.1 | 5.1 | 0.2 |\\n| MoS2 | 1.1 | 0 | 0 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The red curve would shift to higher kinetic energy, reflecting an increased work function due to MoO₃ formation. This would disrupt the Type-II band alignment by blocking electron transfer from MoS₂ to TiO₂, increasing recombination and severely degrading photocatalytic performance.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Platinum (Φ ≈ 5.65 eV) is the appropriate contact because its high work function aligns well for efficient hole extraction from the valence band. In contrast, aluminum (Φ ≈ 4.1 eV) would form a barrier to holes and favor electron injection.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"TiO₂ provides the strong oxidation power because its deep valence band maximum (3.1 eV) corresponds to highly energetic holes capable of generating oxidative species such as hydroxyl radicals. In the Type-II heterostructure, holes preferentially accumulate in MoS₂ (VBM at 1.1 eV), which improves charge separation but partially reduces the overall oxidation strength compared to bare TiO₂.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher binding energy implies a more positive environment (electron loss). The shift to higher binding energy (+0.20 eV) in the TiO_2 (TiNTs) indicates that the Fermi level has moved closer to the valence band (or bands bent upward), which corresponds to a depletion of electrons.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":6,"width":352,"height":306},{"panel_id":"b","x":1,"y":323,"width":357,"height":292},{"panel_id":"c","x":372,"y":3,"width":233,"height":309},{"panel_id":"d","x":369,"y":326,"width":240,"height":294},{"panel_id":"e","x":613,"y":79,"width":394,"height":492}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/49/Shen et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"49","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":1009,"height":620,"image_format":"jpeg","image_sha256":"639d5d2c4474c25c57a2966333f07fea7e84b20201773885ca114deb39478e0a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_50_fig_6.jpg","caption":"Fig. 6 (a) XRD patterns of $45 \\mathrm{nm}$ -thick ZnO:B films deposited at $150^{\\circ}\\mathrm{C}$ with different doping fractions $\\mathrm{DF} = 0.000 - 0.094$ and (b) ZnO powder spectrum for reference. The peak labelled as 'XRD stage' corresponds to a peak related to the stage onto which the samples are mounted to perform the measurement, and its intensity is inversely proportional to the surface area of the sample.","id":"train/atomic-layer-deposition/experimental-usecase/50/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/50/fig_6","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a series of X-ray diffraction (XRD) spectra for ZnO:B samples with varying defect fractions (DF) indicated\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the powder diffraction pattern of intrinsic ZnO for reference\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| DF = 0.094 | DF = 0.075 | DF = 0.053 | DF = 0.027 | DF = 0.014 |\\n| --- | --- | --- | --- | --- |\\n| 0.094 | 0.075 | 0.053 | 0.027 | 0.014 |\"},{\"panel_id\":\"b\",\"text\":\"| 100 | 002 | 101 | 102 | 110 | 103 |\\n| --- | --- | --- | --- | --- | --- |\\n| 32 | 34.5 | 36 | 47.5 | 57 | 63 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No peaks indicative of (crystalline) boron oxide phases were observed in the studied range of doping fractions. The intensity of the peaks decreased abruptly at a doping fraction of DF 4 0.053 for ZnO:B films as expected for highly-doped ZnO films.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The peak labelled as ‘XRD stage’ corresponds to a peak related to the stage onto which the samples are mounted to perform the measurement, and its intensity is inversely proportional to the surface area of the sample.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The intrinsic ZnO films were polycrystalline and exhibited an hexagonal wurtzite structure with a weak (002) texture (i.e., preferential growth orientation), consistent withliterature\"}]}]","bbox":[{"panel_id":"a","x":1,"y":4,"width":622,"height":464},{"panel_id":"b","x":0,"y":464,"width":625,"height":219}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/50/Garcia-Alonso et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"50","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":625,"height":686,"image_format":"jpeg","image_sha256":"1cf1170d6ef1aab14f3765cec9dd7674cbd90db0469a3c6a2d067be3318c0f4e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_52_figure_7.jpg","caption":"Figure 7. X-ray diffraction measurements $(\\lambda = 1.54\\mathrm{\\AA})$ revealing overlapping peaks for $\\mathrm{Co}_3\\mathrm{O}_4$ with a preferential (111) orientation and crystalline $\\mathrm{LiCoO_2}$ after annealing at $700^{\\circ}\\mathrm{C}$ for 6 minutes. The spectra have been offset vertically for clarity. The Co:Li dosing ratio was 2:1 $(x = 2)$ .","id":"train/atomic-layer-deposition/experimental-usecase/52/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/52/figure_7","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays X-ray diffraction patterns for two samples labeled 'annealed' and 'as-deposited'. Peaks correspond to specific crystal planes of Co₃O₄, LiCoO₂, and platinum\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ angle, ° | Peak assignment | annealed | as-deposited |\\n|---|---|---|---|\\n| 19 | Co₃O₄ (111) / LiCoO₂ (003) | 1.0 | 0.15 |\\n| 28 | Si (111) | 0.12 | 0.05 |\\n| 31 | Co₃O₄ (220) | 0.10 | 0.05 |\\n| 37 | Co₃O₄ (311) + LiCoO₂ (101) | 0.18 | 0.12 |\\n| 40 | Pt (111) | 0.10 | 0.08 |\\n| 45 | LiCoO₂ (104) | 0.08 | 0.03 |\\n| 47 | Pt (200) | 0.06 | 0.03 |\\n| 63 | LiCoO₂ (107) | 0.05 | 0.03 |\\n| 68 | Pt (220) | 0.85 | 0.75 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Annealing at 700 C for 6 minutes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Co3O4\\n\\nLiCoO2\\n\\nPt\\n\\nSi\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The LiCoO2 film is used as a cathode material, and the paper emphasizes that a heat treatment around 700 C is needed to obtain electrochemically active, crystalline LiCoO2. Crystallinity is associated with establishing the proper LiCoO2 phase that supports reversible lithium insertion and extraction. This figure supports that goal by showing that annealing produces distinct diffraction features consistent with a crystalline film.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":3,"width":667,"height":463}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/52/Donders et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"52","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":672,"height":469,"image_format":"jpeg","image_sha256":"e54024425a9dd98ae93d3c6fec5ac5efe25e770b6c347e20d1d46aff34fe3c43","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_54_figure_6.jpg","caption":"Figure 6. (Color online) XRD spectra of Cu-TaN-Si stacks with $50~\\mathrm{nm}$ of $\\mathrm{Cu}$ and $29~\\mathrm{nm}$ of TaN. Spectra are given for samples annealed at 200, 400, 600, 650, and $700^{\\circ}\\mathrm{C}$ . The most intense lines for the diffraction pattern of cubic TaN, Cu, and $\\mathrm{Cu_3Si}$ powder samples are indicated. The spectra are shifted vertically for clarity.","id":"train/atomic-layer-deposition/experimental-usecase/54/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/54/figure_6","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a series of X-ray diffraction patterns of Cu–TaN–Si stacks annealed at different temperatures (200, 400, 600, 650 and 700 °C), showing the intensity of peaks corresponding to TaN, Cu, and Cu₃Si reference samples.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | 2θ (degrees) |\\n|---|---|\\n| 700 °C | Peaks at 35, 42, 43, 50, 61, 65, 70, 82, 90, 95 |\\n| 650 °C | Peaks at 35, 42, 43, 50, 61, 65, 90, 95 |\\n| 600 °C | Peaks at 35, 42, 43, 50, 61, 90, 95 |\\n| 400 °C | Peaks at 35, 42, 43, 50, 61, 90, 95 |\\n| 200 °C | Peaks at 35, 42, 43, 50, 61, 90, 95 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"29 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200, 400, 600, 650 and 700 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As the annealing temperature increases, the TaN lines remain unaffected. the intensity of the Cu lines drops for the samples annealed at 650 and 700°C, and, most importantly, Cu3Si lines appear for the samples annealed above 600°C. This means that between 600 and 650°C, Cu starts diffusing through the TaN film and the barrier fails.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":658,"height":513}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":661,"height":517,"image_format":"jpeg","image_sha256":"a2d17b9855c175a582bf23fe66adf1711040755d30914ef2617a3c1b28c728fd","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_54_figure_7.jpg","caption":"Figure 7. (Color online) XRD spectra of Cu-TiN-Si stacks with $50~\\mathrm{nm}$ of $\\mathrm{Cu}$ and $32~\\mathrm{nm}$ of TiN. Spectra are given for samples annealed at 200, 400, 600, and $700^{\\circ}\\mathrm{C}$ . The most intense lines for the diffraction pattern of cubic TiN, Cu, and $\\mathrm{Cu_3Si}$ powder samples are indicated. The spectra are shifted vertically for clarity.","id":"train/atomic-layer-deposition/experimental-usecase/54/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/54/figure_7","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays X-ray diffraction patterns of samples annealed at different temperatures (200°C, 400°C, 600°C, and 700°C) with peaks corresponding to TiN, Cu, and Cu₃Si phases.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | 2θ (degrees) |\\n|---|---|\\n| 700 °C | Peaks at 42, 50, 74, 90, 95 |\\n| 600 °C | Peaks at 42, 50, 74, 90, 95 |\\n| 400 °C | Peaks at 42, 50, 74, 90, 95 |\\n| 200 °C | Peaks at 42, 50, 74, 90, 95 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"50 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"32 nm.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"200, 400, 600 and 700 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"When compared to the reference powder samples of cubic TiN, Cu, and Cu3Si, the TiN lines are not affected by the annealing temperature. The Cu lines become narrower and more intense as temperature increases. Lastly, even at 700 °C, no peaks corresponding to Cu3Si are observed, indicating that barrier failure does not occur.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":0,"width":661,"height":528}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/54/Knoops et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":669,"height":530,"image_format":"jpeg","image_sha256":"47c78ab84c80275b95629c7ff4c9abc3fc2c710da3ef6a870e94b948c77126b8","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_59_fig_8.jpg","caption":"FIG. 8. (Color online) Optical emission spectroscopy (OES) during remote plasma ALD: (a) emission from (1) a regular $\\mathrm{H}_{2}$ plasma and (2) a $\\mathrm{H}_{2}$ plasma ignited after a preceding PDMAT dose as recorded in the first $400\\mathrm{~ms}$ after the plasma strike. The inset shows a magnification of the region around $400\\mathrm{~nm}$ . (b) Time-resolved OES at $388\\mathrm{~nm}$ during the $\\mathrm{H}_{2}$ plasma step for an ALD cycle with (open symbols) and without (closed symbols) PDMAT dosing. During the OES measurements the chamber was wall heated to $150^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/experimental-usecase/59/fig_8","sample_id":"atomic-layer-deposition/experimental-usecase/59/fig_8","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a optical emission spectroscopy (OES) during remote plasma ALD from a regular H2 plasma and a H2 plasma ignited after the PDMAT dose.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the temporal variation of OES intensity at 388 nm, showing an initial peak followed by a decay to a steady state.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | regular H2 plasma | ignited H2 plasma |\\n| --- | --- | --- |\\n| 300 | - | - |\\n| 400 | peak at ~400 | peak at ~400 |\\n| 500 | peak at ~490 | peak at ~490 |\\n| 600 | peak at ~605, 650 | peak at ~605, 650 |\\n| 700 | - | - |\\n| 800 | - | - |\"},{\"panel_id\":\"b\",\"text\":\"| Time (s) | With PDMAT dosing | Without PDMAT dosing |\\n| --- | --- | --- |\\n| 0 | 0 | 8 |\\n| 2 | 90 | 85 |\\n| 4 | 90 | 85 |\\n| 6 | 85 | 85 |\\n| 8 | 85 | 85 |\\n| 10 | 85 | 85 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A plasma ALD process.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"H2 plasma was used for deposition in both regular and ignited conditions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Igniting the H2 plasma gas increases the intensity peak between 360 and 420 nm.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The OES intensity remains constant for the sample without PDMAT dosing. However, it increases with the PDMAT dosing, but then decreases strongly after 1 s of dosing.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":1,"width":628,"height":459},{"panel_id":"b","x":4,"y":478,"width":628,"height":464}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/59/Langereis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"59","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":636,"height":950,"image_format":"jpeg","image_sha256":"2f7ece771fe6d31fd109fda139a0d6e3a5cb3e359918790b45051ee81976b574","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_60_figure_5.jpg","caption":"Figure 5. EDX spectra of the $\\mathrm{Y}_2\\mathrm{O}_3$ coating layer at four different positions in silicon micropillar arrays (panel d inset) of (a) with $\\mathrm{H}_2\\mathrm{O}$ , (b) $\\mathrm{O}_2$ plasma, and (c) $\\mathrm{H}_2\\mathrm{O}$ plasma. (d) Y peak Gaussian area at four different depths acquired from EDX line scans.","id":"train/atomic-layer-deposition/experimental-usecase/60/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/60/figure_5","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"},{"panel_id":"d","label":"multiple line chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":2,"width":421,"height":355},{"panel_id":"b","x":427,"y":0,"width":409,"height":352},{"panel_id":"c","x":8,"y":359,"width":401,"height":340},{"panel_id":"d","x":427,"y":347,"width":411,"height":350}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/Zhao et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"60","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":842,"height":700,"image_format":"jpeg","image_sha256":"972fe44098646f281df0bf722b100fe16097cbb927bc687e5d4a9de2bd2f9f9e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_60_figure_6.jpg","caption":"Figure 6. XRD patterns of $\\mathrm{Y}_2\\mathrm{O}_3$ films for $\\mathrm{Y}(\\mathrm{EtCp})_2(\\mathrm{iPr - amd})$ with $\\mathrm{H}_2\\mathrm{O}$ , $\\mathrm{O}_2$ plasma, and $\\mathrm{H}_2\\mathrm{O}$ plasma.","id":"train/atomic-layer-deposition/experimental-usecase/60/figure_6","sample_id":"atomic-layer-deposition/experimental-usecase/60/figure_6","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays X-ray diffraction patterns for Y2O3 films depositied using thermal H2O, plasma H2O and O2 plasma.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2 Theta (degree) | Intensity (a.u.) | Assignment | Precursor |\\n|---|---|---|---|\\n| 28.69 | 26 | (222) | H2O |\\n| 48.08 | 13 | (440) | H2O |\\n| 57.38 | 26 | (622) | H2O |\\n| 20.18 | 11 | (211) | O2 palsma |\\n| 28.69 | 51 | (222) | O2 palsma |\\n| 33.31 | 9 | (400) | O2 palsma |\\n| 42.22 | 7 | (431) | O2 palsma |\\n| 48.08 | 17 | (440) | O2 palsma |\\n| 57.38 | 21 | (622) | O2 palsma |\\n| 20.18 | 20 | (211) | H2O palsma |\\n| 28.69 | 78 | (222) | H2O palsma |\\n| 33.31 | 16| (400) | H2O palsma |\\n| 42.22 | 10 | (431) | H2O palsma |\\n| 48.08 | 35 | (440) | H2O palsma |\\n| 57.38 | 29 | (622) | H2O palsma |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The films are polycrystalline.XRD pattern displays sharp, distinct peaks, corresponding to specific crystallographic planes. An amorphous material would have broad peak.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The (222) plane.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Silicon, as indicated by the peak labeled \\\"Si\\\".\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":426,"height":332}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/Zhao et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"60","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":430,"height":336,"image_format":"jpeg","image_sha256":"8c443192fa78864facf0fc689bc5b376c1a15f9a803f5cee8378fb84abcb5075","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_60_figure_7.jpg","caption":"Figure 7. XPS spectra of $\\mathrm{Y}_2\\mathrm{O}_3$ films of (a) survey, (b) $\\mathrm{Y}$ 3d, and (c) $\\mathrm{O}$ 1s for $\\mathrm{Y}(\\mathrm{EtCp})_2(\\mathrm{iPr - amd})$ with $\\mathrm{H}_2\\mathrm{O}$ , $\\mathrm{O}_2$ plasma, and $\\mathrm{H}_2\\mathrm{O}$ plasma.","id":"train/atomic-layer-deposition/experimental-usecase/60/figure_7","sample_id":"atomic-layer-deposition/experimental-usecase/60/figure_7","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays XPS survey spectra for Y2O3 films depositied via thermal H2O, O2 palsma and H2O palsma, confirming the presence of O and Y.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays the XP-spectra of Y3d core level for Y2O3 films depositied via thermal H2O, O2 palsma and H2O palsma.\"},{\"panel_id\":\"c\",\"text\":\"TThe figure displays the XP-spectra of O1s core level for Y2O3 films depositied via thermal H2O, O2 palsma and H2O palsma, confirming the presence of O and Y.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Peak Intensity (a.u.) | Assignment | Sample |\\n|---|---|---|---|\\n|532|85| O1s| H2O plasma|\\n|323|62| Y2p 3/2| H2O plasma|\\n|311|62| Y2p 1/2| H2O plasma|\\n|183|20| -| H2O plasma|\\n|168|96| Y3d 3/2, Y3d 5/2| H2O plasma|\\n|34|17| -| H2O plasma|\\n|532|76| O1s| O2 plasma|\\n|323|50| Y2p 3/2| O2 plasma|\\n|311|77| Y2p 1/2| O2 plasma|\\n|183|21| - | O2 plasma|\\n|168|91| Y3d 3/2,Y3d 5/2| O2 plasma|\\n|34|12| -| O2 plasma|\\n|532|57| O1s| H2O |\\n|323|45| Y2p 3/2| H2O |\\n|311|59| Y2p 1/2| H2O |\\n|183|18| -| H2O |\\n|168|77| Y3d 3/2, Y3d 5/2| H2O |\\n|34|11| -| H2O |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Peak Intensity (a.u.) | Assignment | Sample |\\n|---|---|---|---|\\n|157.6|490| Y3d 5/2| H2O plasma|\\n|159.6|618| Y3d 3/2| H2O plasma|\\n|157.6|557| Y3d 5/2| O2 plasma|\\n|159.6|710| Y3d 3/2| O2 plasma|\\n|157.6|490| Y3d 5/2| H2O |\\n|159.6|619| Y3d 3/2| H2O |\"},{\"panel_id\":\"c\",\"text\":\"| Binding Energy (eV) | Peak Intensity (a.u.) | Assignment | Sample |\\n|---|---|---|---|\\n|530.2|888| O1s| H2O plasma|\\n|530.3|662| O1s| O2 plasma|\\n|530.1|725| O1s| H2O|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Y 3d and Y 3p.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 eV.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Shifts in the BE in O1s region.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It decreases.\"}]}]","bbox":[{"panel_id":"a","x":14,"y":6,"width":329,"height":287},{"panel_id":"b","x":347,"y":2,"width":327,"height":289},{"panel_id":"c","x":676,"y":0,"width":330,"height":289}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/60/Zhao et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"60","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":1008,"height":292,"image_format":"jpeg","image_sha256":"31a9555ca5f6cb5da16bcc685d2b8add0c052287ee684e9bf9014280737ba7c9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_66_figure_1.jpg","caption":"Figure 1. XRD pattern comparisons of undoped $\\mathrm{ZnO}$ and Fe, Co, and Ni doped $\\mathrm{ZnO}$ layers with corresponding crystallographic (hkl) peak designations.","id":"train/atomic-layer-deposition/experimental-usecase/66/figure_1","sample_id":"atomic-layer-deposition/experimental-usecase/66/figure_1","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"T\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (deg) | Plane (hkl) | ZnO p-Si(100) | ZnO:Ni | ZnO:Co | ZnO:Fe |\\n|----------|-------------|---------------|--------|--------|--------|\\n| ~31.8 | (100) | ✓ | ✓ | ✓ | ✓ |\\n| ~34.4 | (002) | ✓ | ✓ | ✓ | ✓ |\\n| ~36.2 | (101) | ✓ | ✓ | ✓ | ✓ |\\n| ~47.5 | (102) | ✓ | ✓ | ✓ | ✓ |\\n| ~56.6 | (110) | ✓ | ✓ | ✓ | ✓ |\\n| ~62.8 | (103) | ✓ | ✓ | ✓ | ✓ |\\n| ~66.4 | (200) | ✓ | ✓ | ✓ | ✓ |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A textured polycrystalline layer of nanosized ZnO with a predominant intensity of (100) and (002) index reflections,\\nwhich confirms the formation of ZnO with a hexagonal wurtzite structure, is observed for all films.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"While the intensity of reflections with index (100) remains almost the same for all samples, the intensity of (002) reflections varies depending on the doping element. A similar dependence between the intensities of (100) and (002) reflections is also observed for thin films with a low degree of TM doping (with less TM deposition cycles) in literature.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Pure ZnO: The orientation along the c-axis direction is significantly better expressed, which is proved by the high intensity of reflections with index (002) \\n2. Co-ZnO: Only reflections with index (100) were observed, indicating a change in the orientation\\nof the ZnO crystallites with an ab-plane perpendicular to the substrate \\n3. Ni-ZnO : Both orientations (100) and (002) (ab- and c- oriented respectively) are present\\n4. Fe-ZnO : The intensity of the (100) peak is substantially larger, that is, it is the preferred orientation. It is also seen that in addition to (100) and (002), a low intensity diagonal reflex (102), which is not observed in pure ZnO, also appears (\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"YEs\"}]}]","bbox":[{"panel_id":"a","x":1,"y":4,"width":900,"height":560}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/images/figure_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/66/Paskaleva et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"66","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":903,"height":567,"image_format":"jpeg","image_sha256":"3fcf0e283532863213ade8c4ff97ee66468fd7fdae881033b7995993f6506b21","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_7_fig_7.jpg","caption":"Fig. 7. XRD patterns of a film grown on (1 0 0) silicon substrates at temperature of $150^{\\circ}\\mathrm{C}$ . 3000 cycles were used for film growth. The patterns show 1 0 1 and 2 0 0 reflections of anatase.","id":"train/atomic-layer-deposition/experimental-usecase/7/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/7/fig_7","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XRD patterns collected at 15 mm and 45 mm from the leading edge of a film grown at 150 °C show diffraction features characteristic of anatase TiO₂. A strong, narrow (101) reflection appears at ~25.3°, while a weaker (200) reflection is visible near ~48°. No additional peaks are observed over the 20–60° range, indicating the absence of secondary crystalline phases. The close similarity between the two stacked patterns suggests lateral uniformity in phase and crystallinity across the sample.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (deg) | Peak assignment | Relative intensity | Trace |\\n|----------|-----------------|--------------------|-------|\\n| ~25.3 | Anatase (101) | Strong, sharp | 45 mm from leading edge |\\n| ~25.3 | Anatase (101) | Strong, sharp | 15 mm from leading edge |\\n| ~48.0 | Anatase (200) | Weak | 45 mm from leading edge |\\n| ~48.0 | Anatase (200) | Weak | 15 mm from leading edge |\\n| 20–60 | Background | Low, featureless | Both traces |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Anatase TiO₂.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Anatase TiO₂ is commonly favored because of its favorable electronic structure, higher surface reactivity, and stability at moderate growth temperatures. These properties make it suitable for applications such as photocatalysis, sensors, and dielectric layers, where controlled crystallinity and phase purity are important.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1) Growth temperature: 150 °C, 2) Number of cycles: 3000 ALD cycles, 3) Substrate: (100) silicon\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":430,"height":442}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/images/fig_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/7/Aarik et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"7","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":433,"height":444,"image_format":"jpeg","image_sha256":"41d9690393a09956279cdd0cb513f67244cd9d7abb330bf6747ec95311cf3175","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_11.jpg","caption":"Figure 11. Excitation spectra of Eu-HQA, Eu-TPA, and Eu-Cyt thin films on silicon substrates, illustrating the effect of the chosen organic precursor on the properties of the ALD/MLD deposited thin films.[55,318]","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_11","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_11","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart displays excitation spectra of three different compounds: Eu-HQA, Eu-TPA, and Eu-Cyt, across a range of wavelengths from 250 nm to 400 nm.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavelength (nm) | Eu-HQA (Norm. Log Int.) | Eu-TPA (Norm. Log Int.) | Eu-Cyt (Norm. Log Int.) |\\n|---|---|---|---|\\n| 240 | 1.00 | 1.00 | 0.90 |\\n| 275 | 0.90 | 0.85 | 0.80 |\\n| 300 | 0.95 | 0.60 | 0.75 |\\n| 310 | 0.95 | 0.50 | 0.60 (Valley) |\\n| 350 | 0.90 | 0.05 (Valley) | 1.00 (Peak) |\\n| 375 | 0.75 | 0.20 (Bump) | 0.50 |\\n| 400 | 0.60 | 0.10 | 0.35 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Eu HQA.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It suggests the ligand acts as an efficient sensitizer, absorbing over a wider wavelength range and transferring energy to Eu3+.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The key comparison is the excitation intensity toward the long wavelength end of the spectrum. A film that retains significant excitation response near 365 to 405 nm is more compatible with common near UV LED excitation, whereas a film whose excitation drops strongly before that range will require shorter wavelength excitation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It enables excitation with readily available near UV light sources\\n\\nIt can reduce reliance on deep UV excitation, which can be more damaging to polymers and biological samples\\n\\nIt broadens design flexibility for illumination and sensing systems\"}]}]","bbox":[{"panel_id":"a","x":0,"y":4,"width":658,"height":528}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":658,"height":534,"image_format":"jpeg","image_sha256":"deed7adfca1794190e7155c689de9674930dca292d250e7ce4c9b70f2f01df81","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_14.jpg","caption":"Figure 14. Scheme for UC-enhanced solar-cell performance: a) portions of the solar spectrum utilized by different solar cell technologies, and the potential to extend the usability with different UC $\\mathsf{Ln}^{3 + }$ ions, b) integration of UC layers into the solar cell device, and c) enhanced performance of c-Si solar cell achieved with ALD-grown UC $(\\mathrm{Er},\\mathrm{Ho})_2\\mathrm{O}_3$ coating with three different thicknesses. Reproduced with permission from Elsevier, 2021 refs.[18,140]","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_14","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_14","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"apparatus diagram"},{"panel_id":"c","label":"multiple line chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"c","x":580,"y":265,"width":422,"height":322},{"panel_id":"b","x":622,"y":0,"width":308,"height":262},{"panel_id":"a","x":4,"y":15,"width":579,"height":575}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_14.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":1006,"height":589,"image_format":"jpeg","image_sha256":"f3d5686a27d72effa8e5ff13608fc96837bd9402e791c5bdfb39bbb6f36efb6c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_42_fig4.jpg","caption":"Fig.4 Deconvoluted peaks of (a and c) the Ti 2p XPS and (b and d) O 1s XPS spectra, deposited by (a and b) the conventional sequence and (c and d) the $\\mathsf{H}_2\\mathsf{O}$ -added sequence.","id":"train/atomic-layer-deposition/simulation-usecase/42/fig4","sample_id":"atomic-layer-deposition/simulation-usecase/42/fig4","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"},{"panel_id":"d","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS Ti 2p region showing signals of TiO2 and Ru for conventionally grown TiO2.\"},{\"panel_id\":\"b\",\"text\":\"XPS O 1s region showing signals of TiO2 and adsorbed O2 for conventionally grown TiO2.\"},{\"panel_id\":\"c\",\"text\":\"XPS Ti 2p region showing signals of TiO2 and Ru for TiO2 grown with H2O-added sequence.\"},{\"panel_id\":\"d\",\"text\":\"XPS O 1s region showing signals of TiO2 and adsorbed O2 for TiO2 grown with H2O-added sequence.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Species | Binding energy [eV] |\\n|---|---|\\n| TiO2 | Peaks at 458 and 464 |\\n| Ru | Peak at 460 |\"},{\"panel_id\":\"b\",\"text\":\"| Species | Binding energy [eV] |\\n|---|---|\\n| TiO2 | Peak at 529 |\\n| Abs. O2 | Peak at 531 |\"},{\"panel_id\":\"c\",\"text\":\"| Species | Binding energy [eV] |\\n|---|---|\\n| TiO2 | Peaks at 458 and 464 |\\n| Ru | Peak at 460 |\"},{\"panel_id\":\"d\",\"text\":\"| Species | Binding energy [eV] |\\n|---|---|\\n| TiO2 | Peak at 529 |\\n| Abs. O2 | Peak at 531 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 458 and 464 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"When comparing these two sets of XPS spectra, it becomes apparent that they are practically identical. The chemical environment of both titanium and oxygen species in both films are therefore highly similar, meaning that using H2O in the ALD process did not lead to a TiO2 film with significantly different properties.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around 529 eV.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Oxygen components other than TiO2 that were absorbed in the ALD-grown layer during the synthesis.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":11,"width":328,"height":319},{"panel_id":"b","x":329,"y":10,"width":323,"height":318},{"panel_id":"c","x":20,"y":360,"width":309,"height":312},{"panel_id":"d","x":329,"y":360,"width":323,"height":312}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/Yeonchoo Cho et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":652,"height":672,"image_format":"jpeg","image_sha256":"013375258df219adc1c544a198c761c626fb7e151bb2cf0caef12549663f7f63","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_42_fig_5.jpg","caption":"Fig. 5 XRD spectra of the $\\mathrm{TiO_2}$ thin film deposited by various sequences. Values in time (s) denote the $\\mathrm{H}_2\\mathrm{O}$ feeding time in the $\\mathrm{H}_2\\mathrm{O}$ -added sequence.","id":"train/atomic-layer-deposition/simulation-usecase/42/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/42/fig_5","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays X-ray diffraction patterns of the samples prepared with 3, 5 and 10 second H2O feeding time and one sample without H2O feeding.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | 2θ [degree] |\\n|---|---|\\n| w/o H2O | Peaks at 27.5, 38.5, 42, 44 |\\n| 3 s | Peaks at 27.5, 38.5, 42, 44 |\\n| 5 s | Peaks at 27.5, 38.5, 42, 44 |\\n| 10 s | Peaks at 27.5, 38.5, 42, 44 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"27.3.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 37.5.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 44.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The observed diffraction peaks are identical for all samples with regard to position and intensity. This means that all samples have nearly identical crystalline phases/structure.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":7,"width":426,"height":412}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/42/Yeonchoo Cho et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":430,"height":420,"image_format":"jpeg","image_sha256":"c355c27e846255edbfc2fcc177861453a4f28ee23b290bfab340c920e17dcf10","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_43_figure_7.jpg","caption":"Figure 7. XPS measurements of Ge $3d$ at (a) $90^{\\circ}$ and (b) $15^{\\circ}$ takeoff angles for samples with $1\\mathrm{nm}$ ALD grown $\\mathrm{Al}_2\\mathrm{O}_3$ capping on Ge:H (black), $\\mathrm{GeO}_x(3\\mathrm{\\AA}) / \\mathrm{Ge}$ (red), and $\\mathrm{GeO}_x(5\\mathrm{\\AA}) / \\mathrm{Ge}$ (blue) surfaces. The chemical shifts for different oxidation states are indicated underneath.51 Inset of panel a is the numerical deconvolution in percentage for the areas of oxidation state peaks [normalized by $\\mathrm{Ge}^0$ $(3d_{3 / 2} + 3d_{5 / 2})$ peak area] at $90^{\\circ}$ while the deconvolution of $15^{\\circ}$ measurement is limited by its low signal-to-noise ratio. The numerical deconvolution is based on ref 52 with a Tougard background profile. Binding energy shift for Ge $3d_{3 / 2}$ with respect to Ge $3d_{5 / 2}$ is $0.58\\mathrm{eV}$ , and the core level shifts for $+1, + 2, + 3,$ and $+4$ are 0.8, 1.8, 2.7, and $3.3\\mathrm{eV}$ with respect to Ge $3d_{5 / 2}$ , respectively.","id":"train/atomic-layer-deposition/simulation-usecase/43/figure_7","sample_id":"atomic-layer-deposition/simulation-usecase/43/figure_7","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS measurements of the Ge 3d core level were performed at 90° photoelectron takeoff angles for samples with a 1 nm ALD-grown Al₂O₃ capping layer on Ge:H (black), GeOₓ (3 Å)/Ge (red), and GeOₓ (5 Å)/Ge (blue) surfaces. The chemical shifts corresponding to different Ge oxidation states are indicated below the spectra. The inset shows the numerical deconvolution, expressed as percentages of the oxidation-state peak areas normalized to the Ge⁰ (3d₃/₂ + 3d₅/₂) peak area at 90°. The fitting procedure follows Ref. 52 and employs a Tougaard background. The binding energy separation between the Ge 3d₃/₂ and Ge 3d₅/₂ peaks is 0.58 eV, while the core-level shifts for Ge⁺¹, Ge⁺², Ge⁺³, and Ge⁺⁴ oxidation states are 0.8, 1.8, 2.7, and 3.3 eV, respectively, relative to the Ge 3d₅/₂ peak.\"},{\"panel_id\":\"b\",\"text\":\"XPS measurements of the Ge 3d core level were performed at 15° photoelectron takeoff angles for samples with a 1 nm ALD-grown Al₂O₃ capping layer on Ge:H (black), GeOₓ (3 Å)/Ge (red), and GeOₓ (5 Å)/Ge (blue) surfaces. The chemical shifts corresponding to different Ge oxidation states are indicated below the spectra.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Intensity (a.u.) | Oxidation State |\\n|---|---|---|\\n| 34 | 8.7 | +4 |\\n| 33 | 4.2 | +3 |\\n| 32 | 2.4 | +2 |\\n| 31 | 1.2 | +1 |\\n| 30 | 5.1 | 0 |\\n| 29 | 0.0 | 0 |\\n| 28 | 0.0 | 0 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy (eV) | Intensity (a.u.) | Oxidation State |\\n|---|---|---|\\n| 34 | 8.6 | +4 |\\n| 33 | 4.6 | +3 |\\n| 32 | 0.4 | +2 |\\n| 31 | 0.8 | +1 |\\n| 30 | 5.1 | 0 |\\n| 29 | 0.0 | 0 |\\n| 28 | 0.0 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"All samples are capped with a 1 nm Al₂O₃ layer via ALD. This cap preserves the interface state during transfer and analysis, preventing further air exposure and oxidation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The H-terminated surface minimizes oxide growth; it shows almost no Ge¹⁺-Ge⁴⁺ states. The GeOₓ interlayer, while more stable, inherently contains and may promote further oxide formation during processing.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It implies the GeOₓ interlayers are very thin and/or non-uniform. The detectable elemental Ge (Ge⁰) from the substrate indicates the oxide is just a few atomic layers thick, which is desirable for a scalable gate stack.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The Ge-H surface shows negligible sub-oxide states (Ge¹⁺-Ge³⁺), while the GeOₓ surfaces show significant amounts. Thicker initial GeOₓ (5Å) yields a higher Ge⁴⁺ fraction, indicating a more oxidized interface.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":36,"width":328,"height":283},{"panel_id":"b","x":347,"y":38,"width":318,"height":282}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/Yuanxia Zheng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":669,"height":320,"image_format":"jpeg","image_sha256":"87f50f11627f8800bcec46bb7d3026addbc0e69c379d120c1ff0bf4cc0cf4c2c","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_53_figure_3.jpg","caption":"Figure 3. FTIR absorption spectra of $\\mathrm{SiO}_2$ (upper red plot) and $\\mathrm{Si}_3\\mathrm{N}_4$ (lower green plot) thin films both deposited by ALD at $>400^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-deposition/simulation-usecase/53/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/53/figure_3","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays two infrared absorption spectra, one for Si-O-H and another for Si-NH-Si, with peaks at specific wavenumbers.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Functional Group | \\n|--------------------|-------------------|\\n| ~3700–3200 | Si–O–H |\\n| ~1100 | Si–O–Si | \\n| ~800 | Si–O–Si |\\n| ~930 | Si–N | \\n| ~3300–3400 | Si–NH–Si | \\n| ~1600–1650 | Si–NH–Si |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The incorporation of hydrogen in ALD of silicon nitride but not in ALD of silicon oxide suggests different surface chemistries during deposition\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"One of the marked differences between these spectra is the lack of bands associated with hydrogen (Si−O−H) in SiO2. In Si3N4, a peak assigned to NH stretching modes can be clearly observed at 3350 cm−1\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The following peaks identified at Wavenumber \\n1. 3700–3200 cm⁻¹ = Si–O–H \\n2. 1100 cm⁻¹ = Si–O–Si \\n3. 800 cm⁻¹ = Si–O–Si \\n4. 930 cm⁻¹ = Si–N \\n5. 3300–3400 cm⁻¹ = Si–NH–Si \\n6. 1600–1650 cm⁻¹ = Si–NH–Si\"}]}]","bbox":[{"panel_id":"a","x":0,"y":1,"width":595,"height":485}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/53/Ciaran A. Murray et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"53","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":598,"height":489,"image_format":"jpeg","image_sha256":"07e6a1edd10bd0e082ee936cff7164617349a3cf124f94d5297251ab168afd38","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_11_figure_6.jpg","caption":"Figure 6. Difference infrared spectra for three consecutive exposures of (a) Hacac and (b) $\\mathrm{O}_2$ plasma on $\\mathrm{ZnO}$ powder at $150^{\\circ}\\mathrm{C}$ . The reference spectrum for the Hacac doses was the bare $\\mathrm{ZnO}$ powder. For the $\\mathrm{O}_2$ plasma pulses, the spectra were referenced to the preceding Hacac exposure (third Hacac dose); therefore, the removal of species shows up as negative peaks. The spectrum baselines have been equally shifted for clarity. (c) Difference spectrum between the third Hacac dose and the $15\\mathrm{min}\\mathrm{O}_2$ plasma exposure, indicating the presence of residual acac species on the $\\mathrm{ZnO}$ surface. Peak assignment, after ref 47: 1 $\\nu (\\mathrm{C} = \\mathrm{O})$ ; 2 $\\nu (\\mathrm{C} = \\mathrm{C}) + \\nu (\\mathrm{C} = \\mathrm{O})$ , $\\nu (\\mathrm{C} = \\mathrm{O}) + \\delta (\\mathrm{C} = \\mathrm{H})$ ; 3 $\\delta (\\mathrm{C} = \\mathrm{H}) + \\delta (\\mathrm{CH}_3)$ ; 4 $\\nu (\\mathrm{C} = \\mathrm{C}) + \\nu (\\mathrm{C} = \\mathrm{CH}_3)$ ; 5 $\\delta (\\mathrm{CH}_3)$ ; 6 $\\delta (\\mathrm{C} - \\mathrm{CH}_3) + \\nu (\\mathrm{C} = \\mathrm{O})$ , where $\\nu$ and $\\delta$ indicate stretching and bending, respectively.","id":"train/atomic-layer-etching/experimental-usecase/11/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/11/figure_6","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays absorbance spectra at various wavenumbers for different treatments with a being Hacac exposure on ZnO powder\"},{\"panel_id\":\"b\",\"text\":\"The figure shows absorbance spectra for different plasma treatment durations on ZnO powder\"},{\"panel_id\":\"c\",\"text\":\"The figure presents the difference spectrum between the third Hacac dose and 15-minute O₂ plasma treatment.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance |\\n|------------------|------------|\\n| 2000 | 0.001 |\\n| 1800 | 0.001 |\\n| 1600 | 0.001 |\\n| 1400 | 0.001 |\\n| 1200 | 0.001 |\\n| 1000 | 0.001 |\\n| 800 | 0.001 |\"},{\"panel_id\":\"b\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance |\\n|------------------|------------|\\n| 2000 | 0.001 |\\n| 1800 | 0.001 |\\n| 1600 | 0.001 |\\n| 1400 | 0.001 |\\n| 1200 | 0.001 |\\n| 1000 | 0.001 |\\n| 800 | 0.001 |\"},{\"panel_id\":\"c\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance |\\n|------------------|------------|\\n| 2000 | 0.001 |\\n| 1800 | 0.001 |\\n| 1600 | 0.001 |\\n| 1400 | 0.001 |\\n| 1200 | 0.001 |\\n| 1000 | 0.001 |\\n| 800 | 0.001 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1 ν(C=O); \\n2 ν(C=C) + ν(C=O), ν(C=O) + δ(C−H); \\n3 δ(C−H) + δ(CH3); \\n4 ν(C−C) + ν(C−CH3); \\n5 δ(CH3); 6 δ(C−CH3)+ ν(C=O)\\n where =, ν and δ indicate double bonds, stretching and bending, respectively.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the second half-reaction (B), acac groups and/or related carbonaceous inhibiting species are removed from the ZnO surface by the O2 plasma step as seen in b. Therefore, the role of the O2 plasma may be primarily to remove the carbonaceous inhibiting layer that is formed during the half-reaction A, thereby allowing etching in a cyclic fashion.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During this etching reaction, stable surface acac species build up on the ZnO surface. It can be speculated that acac-species binding in a chelate configuration (the two oxygen atoms of the same Hacac binding to the same Zn atom) can lead to the formation of volatile Zn(acac)2 upon further reaction with another Hacac molecule\"}]}]","bbox":[{"panel_id":"c","x":34,"y":374,"width":353,"height":172},{"panel_id":"b","x":47,"y":189,"width":339,"height":175},{"panel_id":"a","x":34,"y":3,"width":354,"height":177}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/11/Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plasma.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":389,"height":623,"image_format":"jpeg","image_sha256":"cf0f8523d997c02fc63f6d2767ece0c3ca6240aaa86619676164eff28907a86d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_28_fig_3.jpg","caption":"FIG. 3. (a) Al 2p XPS peak and (b) SIMS depth profiles of O, F, Al, AlO, and AlOF of $\\mathrm{Al}_2\\mathrm{O}_3$ surface after 60 s exposures using $\\mathrm{NF}_3$ at 10 W and $100^{\\circ}\\mathrm{C}$ .","id":"train/atomic-layer-etching/experimental-usecase/28/fig_3","sample_id":"atomic-layer-etching/experimental-usecase/28/fig_3","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows Al 2p XPS spectra for reference and fluorination samples. After fluorination, new species (AlF3 and AlOFx) can be detected compared to reference (Al2O3).\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the SIMS depth profiles of O-, F-, Al-, AIO-, and AIOF- species as a function of sputter time.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Measurement | Assignment | Curve type | Peak: Binding energy [eV] | Peak: Intensity (a.u.) |\\n|---|---|---|---|---|\\n|Reference| Al2O3 | Envelope | 74.57 | 273 |\\n| Fluorination | Al2O3, AlOFx, AlF3 | Envelope | 74.98| 75 |\\n| Fluorination | Al2O3 |Component | 74.72 | 65 |\\n| Fluorination | AlOFx |Component | 75.76 | 38 |\\n| Fluorination | AlF3 |Component | 76.59 | 6 |\"},{\"panel_id\":\"b\",\"text\":\"| Sputter time (s) | Intensity (a.u): O- | Intensity (a.u): F- | Intensity (a.u): Al- | Intensity (a.u): AlO- | Intensity (a.u): AlOF- |\\n|---|---|---|---|---|---|\\n| 0 | 0 | 51 | 0 |0 | 0 |\\n| 5 | 52 | 34 | 3 | 40 | 2 |\\n| 10 | 52 | 12 | 3 |43 | 0 |\\n| 15 | 52 | 6| 3 | 43 | 0 |\\n| 20 | 52 | 5 | 3 | 43 | 0 |\\n| 25 | 52 | 3 | 3 | 43| 0 |\\n| 30 | 53 | 3 | 3 | 44 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Al 2p binding energy increases with increasing fluorine coordination of Al ( from Al₂O₃ to AlOFₓ to AlF₃). That means that fluorine withdraws electron density around Al more strongly, making Al more positively charged, which leads to the higher binding energy. Therefore, F is more electronegative.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Partial fluorination.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The AlOFₓ component between Al₂O₃ and AlF₃ on bonding energy axis. Because F is more electronegative than O, replacing some O neighbors with F withdraws more electron density from Al than in pure Al₂O₃, but less than in fully fluorinated AlF₃. As a result, the effective positive charge on Al (and thus the Al 2p binding energy) is intermediate between the oxide and the fluoride.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It looks more like a smooth change.\"}]}]","bbox":[{"panel_id":"a","x":102,"y":12,"width":570,"height":496},{"panel_id":"b","x":97,"y":528,"width":570,"height":474}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/Atomic layer etching of Al2O3 with NF3 plasma fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":672,"height":1008,"image_format":"jpeg","image_sha256":"bfd72f37d22a7048417455c3af1f3ee6800eadcf36c3502091424cba7ceb2359","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_33_fig_10.jpg","caption":"FIG. 10. High-resolution N1s spectra of TiN samples (a) before surface modification, (b) after surface modification, and (c) after surface modification followed by IR annealing.","id":"train/atomic-layer-etching/experimental-usecase/33/fig_10","sample_id":"atomic-layer-etching/experimental-usecase/33/fig_10","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays three spectra charts labeled a, b, and c, each showing intensity against binding energy before modifaction, after modification, and after anneal.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Intensity (a.u.) a |Intensity (a.u.) b |Intensity (a.u.) c |\\n|---|---|---|---|\\n| 390 | null |null|null|\\n| 395 | null |null|null|\\n| 396 | 2 |null|2|\\n| 397 | 3 |1|2|\\n| 398 | 2 |null|null|\\n| 399 | null |null|null|\\n| 400 | null |null|null|\\n| 405 | null |null|null|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"It looks as if there is just N bonded in a single way, as the peak is nice symmetric around the peak position.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During the modification of the TiN surface, part of the N bonds is shielded for the measurement procedure by chlorine species. By removing the chlorine with an anneal, TiN of the underlaying substrate is once again probed.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectrum after the anneal step shows a clear shoulder, which was not present before etching, so there has been a change.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No it is hard to do so.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":1,"width":649,"height":912}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/Atomic layer etching of titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":650,"height":917,"image_format":"jpeg","image_sha256":"5a07a232eeef6d3a8199dcfed96d849ab463452083aa194417d018f7f813ff97","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_33_fig_9.jpg","caption":"FIG. 9. High-resolution Ti2p spectra of TiN samples (a) before surface modification, (b) after surface modification, and (c) after surface modification followed by IR annealing.","id":"train/atomic-layer-etching/experimental-usecase/33/fig_9","sample_id":"atomic-layer-etching/experimental-usecase/33/fig_9","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays three spectra charts labeled a, b, and c, each showing intensity against binding energy in electron volts at different stages in the ALE process.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy (eV) | Intensity (a.u.) a |Intensity (a.u.) a |Intensity (a.u.) a |\\n|---|---|---|---|\\n| 470 | -|-|-|\\n| 465 | Peak | Peak | Peak |\\n| 459 | Ti-O | Ti-O | Ti-O |\\n| 456 | Ti-N | Ti-N | Ti-N |\\n|450|-|-|-|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The red spectrum shows that especially the Ti-N peak is reduced after modification, so the step is selective for Ti-N and not for Ti-O.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The measurement is likely performed at the surface as there is quite some oxygen present, whereas in the bulk it should be lower.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The bond is active at 459 eV.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The peak can be seen as a shoulder of the oxygen peak.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":4,"width":636,"height":914}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/images/fig_9.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/33/Atomic layer etching of titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":639,"height":917,"image_format":"jpeg","image_sha256":"423583b565f137f73227de28c4b23cb6c81a80e909cc151885ab080f679c0140","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_39_fig3.jpg","caption":"FIG.3. Surfa XPS pects showing a) Nb3d, (b) O1s, (c) F1s spectra, and (d) Nb4s, Li1s, Mg2p. The spectra are shown for (top) original and (bottom) etched bulk MgO-doped LN over 50 ALE cycles consisting of a $40\\mathrm{sH}_2$ plasma exposure followed by a $40\\mathrm{s}$ $\\mathrm{SF}_6 / \\mathrm{Ar}$ exposure. The measured (dots) and fit spectra (lines) intensity are reported in arbitrary units (a.u.) against the binding energy on the x-axis. (e) Surface atomic concentration normalized by carbon atomic concentration from XPS spectra for each sample for untreated bulk LN, 1 cycle $\\mathsf{H}_{2}$ plasma exposure, 10 ALE cycles, and 50 ALE cycles.","id":"train/atomic-layer-etching/experimental-usecase/39/fig3","sample_id":"atomic-layer-etching/experimental-usecase/39/fig3","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"},{"panel_id":"d","label":"stacked spectra chart"},{"panel_id":"e","label":"stacked bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Stacked Nb 3d XPS spectra comparing original and 50-cycle ALE-etched MgO-doped LN surfaces.\"},{\"panel_id\":\"b\",\"text\":\"Stacked O 1s XPS spectra showing O–LN and O–C components for original and etched samples.\"},{\"panel_id\":\"c\",\"text\":\"Stacked F 1s XPS spectra indicating the absence of fluorine in the original sample and its appearance after 50 ALE cycles.\"},{\"panel_id\":\"d\",\"text\":\"Stacked XPS spectra of Nb 4s, Li 1s, and Mg 2p regions comparing original and etched MgO-doped LN.\"},{\"panel_id\":\"e\",\"text\":\"Stacked bar chart showing surface atomic concentrations of Nb, O, Li, F, and Mg for untreated LN, 1 cycle H₂ plasma exposure, 10 ALE cycles, and 50 ALE cycles.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Plot | Component | Binding Energy (eV) |\\n|-----------|-----------|---------------------|\\n| Original | Nb3d | ~208–209, ~210–211 |\\n| Etched | Nb3d | ~208–209, ~210–211 |\"},{\"panel_id\":\"b\",\"text\":\"| Plot | Component | Binding Energy (eV) | \\n|------|-----------|---------------------| \\n| Original | O-LN | ~532.5 | \\n| Original | O-C | ~531.0 | \\n| Etched | O-LN | ~532.5 | \\n| Etched | O-C | ~531.0 |\"},{\"panel_id\":\"c\",\"text\":\"| Plot | Component | Binding Energy (eV) |\\n|------|-----------|----------|\\n| Original | F-LN | Absent/near baseline |\\n| Original | F-C | Absent/near baseline |\\n| Etched | F-LN | Present (~685.5 eV) |\\n| Etched | F-C | Present (~687.5 eV) |\"},{\"panel_id\":\"d\",\"text\":\"| Plot | Component | Binding Energy (eV) | \\n|------|-----------|---------------------| \\n| Original | Mg 2p | ~60.5 | \\n| Original | Nb 4s | ~55.5 | \\n| Original | Li 1s | ~50.5 | \\n| Etched | Mg 2p | ~61.0 | \\n| Etched | Nb 4s | ~55.5 | \\n| Etched | Li 1s | ~52.0 |\"},{\"panel_id\":\"e\",\"text\":\"| Sample | Nb (%) | O (%) | Li (%) | F (%) | Mg (%) |\\n|--------|--------|-------|--------|-------|--------|\\n| Untreated | ~20 | ~60 | ~15 | ~<1 | ~1 |\\n| 1 cyc. H2 plasma | ~18 | ~52 | 25 | ~7 | <2 |\\n| 10 cyc. ALE | ~19 | ~52 | 22 | 6 | <2 |\\n| 50 cyc. ALE | ~20 | 55 | 16 | 6 | <2 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"e\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Fluorine (F) shows the largest increase, rising from approximately 5% to 12%.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The stacked bar chart shows that oxygen concentration decreases from the untreated condition to the ALE-processed samples, while fluorine concentration increases after ALE treatment. This inverse trend is visible as the appearance and persistence of fluorine in the ALE samples alongside a reduced oxygen fraction. The data indicate a surface compositional change associated with ALE cycling, as directly shown by the XPS-derived concentrations.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The two components identified are O-LN and O-C.\"}]}]","bbox":[{"panel_id":"a","x":95,"y":19,"width":325,"height":338},{"panel_id":"b","x":451,"y":24,"width":299,"height":331},{"panel_id":"c","x":92,"y":395,"width":333,"height":331},{"panel_id":"d","x":454,"y":397,"width":306,"height":335},{"panel_id":"e","x":454,"y":397,"width":306,"height":335}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/images/fig3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/images/fig3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/39/Isotropic atomic layer etching of MgO-doped lithium niobate.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":1420,"height":770,"image_format":"jpeg","image_sha256":"a5064386c408fe8bce3d69282235a25d67bf8e41381aa1f132f583f14ad8f956","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_40_fig4.jpg","caption":"FIG.4. Surace XPS spect shwng a) Ti2p, b) N1s, (c) O1s, and (d) F1s spectra. The spectra are shown for (top) original and (bottom) etched Ti films. The measured (gray dots) and fit spectra (black lines) intensities are reported in arbitrary units (a.u.) against the binding energy on the $x$ axis. The $y$ axis scale is identical between panels within each subfigure.","id":"train/atomic-layer-etching/experimental-usecase/40/fig4","sample_id":"atomic-layer-etching/experimental-usecase/40/fig4","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"},{"panel_id":"d","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The Ti 2p XPS spectra compare original (top) and ALE-treated (bottom) TiN films. Five deconvoluted components are shown: Ti-N, Ti-ON, Ti-O, Ti-F, and Ti-C. After ALE, the Ti-N component increases while oxide-related peaks decrease, indicating reduced surface oxidation.\"},{\"panel_id\":\"b\",\"text\":\"The N 1s XPS spectra show N-Ti (~397 eV) and N-O (~399 eV) components for original (top) and ALE-treated (bottom) films. The dominant N-Ti peak increases slightly after ALE treatment.\"},{\"panel_id\":\"c\",\"text\":\"The O 1s XPS spectra display O-Ti and O-N components. After ALE (bottom), the overall oxygen signal decreases, indicating reduced native oxide concentration on the surface.\"},{\"panel_id\":\"d\",\"text\":\"The F 1s XPS spectra show F-C (~690 eV) and F-Ti (~685 eV) components. The ALE-treated film (bottom) exhibits increased fluorine signal compared to the original (top), consistent with fluorine incorporation from the SF6/H2 plasma step.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Binding Energy, eV | Component | Original | After ALE |\\n|---|---|---|---|\\n| 455 | Ti-N | 0.70 | 0.55 |\\n| 458 | Ti-ON | 1.00 | 0.85 |\\n| 460 | Ti-O | 0.45 | 0.55 |\\n| 462 | Ti-F | 0.25 | 0.40 |\\n| 454 | Ti-C | 0.10 | 0.15 |\\n| 464 | Ti-N (2p₁/₂) | 0.55 | 0.45 |\\n| 466 | Ti-ON (2p₁/₂) | 0.35 | 0.30 |\"},{\"panel_id\":\"b\",\"text\":\"| Binding Energy, eV | Component | Original | After ALE |\\n|---|---|---|---|\\n| 397 | N-Ti | 1.00 | 0.75 |\\n| 399 | N-O | 0.15 | 0.35 |\"},{\"panel_id\":\"c\",\"text\":\"| Binding Energy, eV | Component | Original | After ALE |\\n|---|---|---|---|\\n| 530 | O-Ti | 0.55 | 0.45 |\\n| 532 | O-N | 1.00 | 1.00 |\"},{\"panel_id\":\"d\",\"text\":\"| Binding Energy, eV | Component | Original | After ALE |\\n|---|---|---|---|\\n| 685 | F-Ti | 0.45 | 1.00 |\\n| 689 | F-C | 1.00 | 0.55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ti-N, Ti-ON (titanium oxynitride), Ti-O, Ti-F, Ti-C\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The O 1s XPS spectra show a clear decrease in signal intensity after ALE treatment. Both the O-Ti and O-N components remain present but with reduced magnitude compared to the original film. This reduction indicates that the ALE process effectively removes a portion of the native oxide layer that forms on TiN surfaces. According to the paper, this corresponds to a 49% decrease in surface oxygen concentration, which is significant for applications where surface oxides degrade device performance.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The increased F 1s signal after ALE indicates fluorine incorporation at the TiN surface during the SF6/H2 plasma exposure step. Two fluorine species are identified: F-Ti bonds (~685 eV) from direct fluorination of titanium, and F-C bonds (~690 eV) likely from carbon contamination reactions. This fluorinated surface layer may act as a diffusion barrier against subsequent reoxidation when the film is exposed to atmosphere, potentially explaining the lower resistivity observed in ALE-treated films even after aging.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The gray dots represent measured experimental data points, and the black lines represent the fitted spectra from peak deconvolution analysis.\"}]}]","bbox":[{"panel_id":"a","x":27,"y":38,"width":670,"height":510},{"panel_id":"b","x":733,"y":37,"width":669,"height":509},{"panel_id":"c","x":29,"y":587,"width":650,"height":495},{"panel_id":"d","x":724,"y":587,"width":665,"height":495}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/images/fig4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/40/Isotropic plasma-thermal atomic layer etching of.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"40","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":1414,"height":1092,"image_format":"jpeg","image_sha256":"4e3182b3ece7c01d4f452889d4547a33d532183ffb678ed8369046f32ff380cb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_8_figure_2.jpg","caption":"Figure 2. Raman spectra of one monolayer of $\\mathrm{MoS}_2$ before and after the exposure to the Cl plasma for the Cl-radical-adsorption step up to $10\\mathrm{min}$ . No change in the Raman spectra of the $\\mathrm{MoS}_2$ was observed, even after a $10\\mathrm{min}$ exposure.","id":"train/atomic-layer-etching/experimental-usecase/8/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/8/figure_2","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows Raman spectra of monolayer MoS₂ under different conditions: pristine state and after Cl adsorption for 2 minutes and 10 minutes.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Raman Shift (cm⁻¹) |\\n|---|---|\\n| Pristine | Peaks at 385, 405 |\\n| Cl adsorption 2min | Peaks at 385, 405 |\\n| Cl adsorption 10min | Peaks at 385, 405 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10 mTorr.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"18 W.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"63 sccm.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Compared to the pristine MoS2 surface, the exposure to Cl2 plasma did not affect the peak positions and had a negligible affect on the intensity. The width of the Raman peaks of the monolayer MoS2 that was measured after the Cl-radical exposures of 2 and 10 min was not changed; therefore, the Cl exposure did not etch the monolayer MoS2.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":5,"width":561,"height":431}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_2.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/Controlled Layer-by-Layer Etching of MoS2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":564,"height":436,"image_format":"jpeg","image_sha256":"7a93c4714b9decab93d605f0192f299d3647f1a6ea26982bb64085a301558a16","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_8_figure_3.jpg","caption":"Figure 3. (a) Raman spectra of one monolayer $\\mathrm{MoS}_2$ exposed to different $\\mathrm{Ar^{+}}$ ion energies for $2\\mathrm{min}$ by changing the first grid voltages of the ICP ion gun. For $+10\\mathrm{V}$ of the first grid voltage, $10\\mathrm{min}$ exposure to the $\\mathrm{Ar^{+}}$ ion beam is also included. (b) $\\mathrm{Ar^{+}}$ ion energy distribution for $+10\\mathrm{V}$ to $+70\\mathrm{V}$ of the first grid voltage measured using a quadruple mass spectrometer with an ion energy analyzer. For the $\\mathrm{Ar^{+}}$ ICP ion gun operation, $70\\mathrm{scm}$ of $\\mathrm{Ar}$ and $13.56\\mathrm{MHz}$ $200\\mathrm{W}$ rf power were applied to the ICP source. \"X5\" means that the actual ion-energy distribution of $+10\\mathrm{V}$ is $5$ times smaller than that shown in the figure.","id":"train/atomic-layer-etching/experimental-usecase/8/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/8/figure_3","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"multi spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows Raman spectra of a pristine MoS2 layer compared to the MoS2 layer after exposure to Ar+ ions at different grid voltages.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays the Ion Energy Distribution Function (IEDF) for Ar+ at different ion energies.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Raman Shift (cm⁻¹) |\\n|---|---|\\n| Pristine | Peaks at 385, 405 |\\n| 1st-70V 2 min | |\\n| 1st-50V 2 min | |\\n| 1st-30V 2 min | |\\n| 1st-10V 10 min | Peaks at 385, 405 |\\n| 1st-10V 2 min | Peaks at 385, 405 |\"},{\"panel_id\":\"b\",\"text\":\"| Sample | Ion Energy (eV) |\\n|---|---|\\n| 10V | Peak at 20 |\\n| 30V | Peak at 20 |\\n| 50V | Peak at 50 |\\n| 70V | Peak at 70 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10, 30, 50 and 70 V.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"When the MoS2 was exposed to the Ar+ ion source for 2 min with a grid voltage higher than +30 V, no Raman peaks were observed, indicating that the MoS2 was removed. However, when the MoS2 was exposed to the Ar+ ion beam using a grid voltage of +10 V for 2 and 10 min, no change was observed. This indicates that there was no change to the MoS2 material when +10 V was used to accelerate the Ar+ ion beam.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"70 sccm\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At low voltages, the energy distribution is broad and the overall intensity is low. At higher voltages, the distribution becomes more narrow and the intensity increases.\"}]}]","bbox":[{"panel_id":"a","x":37,"y":3,"width":545,"height":418},{"panel_id":"b","x":3,"y":433,"width":576,"height":426}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/Controlled Layer-by-Layer Etching of MoS2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":584,"height":861,"image_format":"jpeg","image_sha256":"469f616ef80075c79f6b7ac0a6cc8970de4d0d5fe468cc64900db58d165fcb79","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_8_figure_4.jpg","caption":"Figure 4. Raman spectra of pristine $\\mathrm{MoS}_2$ monolayer, after $\\mathrm{Cl}_2$ adsorption for $2\\mathrm{min}$ , and after $\\mathrm{Ar^{+}}$ ion desorption for $2\\mathrm{min}$ , sequentially, resulting in the etching of one monolayer of $\\mathrm{MoS}_2$ .","id":"train/atomic-layer-etching/experimental-usecase/8/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/8/figure_4","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows Raman spectra of monolayer MoS2 under different conditions: pristine state, after Cl adsorption, and after Ar desorption.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Raman Shift (cm⁻¹) |\\n|---|---|\\n| Pristine | Peaks at 385, 405 |\\n| Cl adsorption 2min | Peaks at 385, 405 |\\n| Ar desorption 2min | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 minutes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 minutes.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"10 V.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No change was detected in the peak width between the pristine and Cl-exposed steps; however, when the Cl-modified MoS2 was exposed to the Ar+ ion-desorption step, no peaks were detected, indicating that the monolayer MoS2 was completely removed. It is therefore expected that during the Cl-adsorption step, the MoS2 binding energy is weakened by chlorine adsorbing onto the MoS2 and is then removed during the desorption step by the controlled Ar+ ion energy.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":2,"width":554,"height":435}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/Controlled Layer-by-Layer Etching of MoS2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":556,"height":439,"image_format":"jpeg","image_sha256":"031f42aac3c7661193cad17cd2a01c43d1da53afad36e0cb5c34959fee6a4513","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_8_figure_5.jpg","caption":"Figure 5. Raman spectra of trilayer $\\mathrm{MoS}_2$ after each step of ALET for three cycles: (a) Raman spectra of $\\mathrm{MoS}_2$ during each step of ALET; (b) change of the gap distance between $\\mathrm{E}_{12}^{1}$ and $\\mathrm{A_{1g}}$ of the $\\mathrm{MoS}_2$ Raman spectra during each step of the three ALET cycles.","id":"train/atomic-layer-etching/experimental-usecase/8/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/8/figure_5","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"reaction energy profile diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows Raman spectra of trilayer MoS₂ at various stages of chemical and argon treatments, highlighting changes in peak intensities and shifts.\"},{\"panel_id\":\"b\",\"text\":\"The figure illustrates the change in gap distance between layers of MoS₂ during different experimental steps, showing a decreasing trend.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Raman Shift (cm⁻¹) |\\n|---|---|\\n| Pristine (Trilayer) | Peaks at 385, 405 |\\n| 1st Cl | Peaks at 385, 405 |\\n| 1st Ar | Peaks at 385, 405 |\\n| 2nd Cl (Bilayer) | Peaks at 385, 405 |\\n| 2nd Ar | Peaks at 385, 405 |\\n| 3rd Cl (Monolayer) | Peaks at 385, 405 |\\n| 3rd Ar (Substrate) | |\"},{\"panel_id\":\"b\",\"text\":\"| Experiment Step | Gap Distance (cm⁻¹) |\\n|---|---|\\n| 1step | 23.5 |\\n| 2step | 22.0 |\\n| 3step | 22.0 |\\n| 4step | 21.0 |\\n| 5step | 21.0 |\\n| 6step | 20.5 |\\n| 7step | 20.5 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As more ALET cycles were completed, the peaks decreased in intensity and moved slightly closer together.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"About 0.5 for the third step vs. 1.5 for the first two steps.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It changed from about 23.5 to 20.5, so 3 in total.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":4,"width":528,"height":393},{"panel_id":"b","x":2,"y":402,"width":530,"height":400}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/Controlled Layer-by-Layer Etching of MoS2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":533,"height":806,"image_format":"jpeg","image_sha256":"13855215c8ce4891ea31a00e7494b71ade243398ecdc1d28aa3a93a299de42f0","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_8_figure_7.jpg","caption":"Figure 7. Narrow-scan XPS data of (a) Mo 3d, (b) S 2p, and (c) Cl 2p that were measured during each step of the three ALET cycles for the trilayer $\\mathrm{MoS}_2$ .","id":"train/atomic-layer-etching/experimental-usecase/8/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/8/figure_7","subset":"stacked-spectra-chart","split":"train","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the XPS data of the Mo 3d region for six different samples.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the XPS data of the S 2p region for six different samples\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the XPS data of the Cl 2p region for six different samples\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Sample | Binding Energy (eV) |\\n|---|---| \\n| Pristine | Peaks at 230, 233 |\\n| 1st cycle | Peaks at 230, 233 | \\n| 2nd Cl | Peaks at 230, 233 |\\n| 2nd Ar | Peaks at 230, 233 |\\n| 3rd Cl | Peaks at 230, 233, 236 |\\n| 3rd Ar | Peaks at 233, 236 |\"},{\"panel_id\":\"b\",\"text\":\"| Sample | Binding Energy (eV) |\\n|---|---| \\n| Pristine | Peaks at 162, 164 |\\n| 1st cycle | Peaks at 162, 164 | \\n| 2nd Cl | Peaks at 162, 164 |\\n| 2nd Ar | Peaks at 162, 164 |\\n| 3rd Cl | Peaks at 162, 164 |\\n| 3rd Ar | |\"},{\"panel_id\":\"c\",\"text\":\"| Sample | Binding Energy (eV) |\\n|---|---| \\n| Pristine | |\\n| 1st cycle | | \\n| 2nd Cl | Peaks at 202, 200 |\\n| 2nd Ar | |\\n| 3rd Cl | Peaks at 202, 200 |\\n| 3rd Ar | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At 229.5 and 232.6 eV.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The typical Mo 3d peaks were observed after the third Cl-adsorption step; but after the third desorption step, these peaks were removed and distorted. The authors believe that the remaining peak of Mo after the third Ar+ ion-desorption step is related to the diffusion of the Mo into the SiO2 or the oxidized Mo particle on the SiO2, because the peak positions of the remaining Mo after the third Ar+ ion-desorption step are exactly matched with those of the Mo 3d3/2 (236.3 eV) and Mo 3d5/2 (232.6 eV) that are related to MoO3.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At162.3 and 165.6 eV.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The fact that no signal is observed in the Cl 2p region after Ar+ exposure means all Cl is successfully removed during that step.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":422,"height":345},{"panel_id":"b","x":0,"y":349,"width":416,"height":352},{"panel_id":"c","x":5,"y":720,"width":411,"height":332}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_7.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/Controlled Layer-by-Layer Etching of MoS2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":425,"height":1055,"image_format":"jpeg","image_sha256":"db4c136d064c3d585d00046ce9730f3782690a6e59aaeebf898ba8656edd4a36","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/stacked-spectra-chart/validation/metadata.jsonl b/subsets/stacked-spectra-chart/validation/metadata.jsonl index b8efbe2e1c7e8ca0027b678b305032efa9bb67b0..0f1e4589ef08cfbf0699937e85cf40a2c9e57973 100644 --- a/subsets/stacked-spectra-chart/validation/metadata.jsonl +++ b/subsets/stacked-spectra-chart/validation/metadata.jsonl @@ -1,5 +1,5 @@ -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig_4.jpg","caption":"FIG. 4. XRD patterns of as-deposited $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ thin film and of those annealed at various RTA temperatures.","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig_4","subset":"stacked-spectra-chart","split":"validation","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":475,"height":367,"image_format":"jpeg","image_sha256":"5133e3c874d318e7fc15e52dd120d3e8b1698aa430dfc9efbe5b224406b45b43","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":474,"height":362}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multilayer plot shows the X-ray diffraction patterns of the as-deposited Ga₂O₃ thin film and the films annealed at 500 °C, 700 °C, and 900 °C temperatures. Crystallinity seems to improve and newer peaks started to reflect for higher annealing temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2 Theta (degrees) | As-deposit | 500°C | 700°C | 900°C |\\n|---|---|---|---|---|\\n| 25 | | | | |\\n| 30 | | | | |\\n| 35 | | | | |\\n| 40 | | | | |\\n| 45 | | | | |\\n| 50 | | | | |\\n| 55 | | | | |\\n| 60 | | | | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The main objective of annealing the as-deposited Ga₂O₃ thin films at high temperatures is to improve their crystallinity, remove defects, and transform the film from an amorphous or poorly ordered state into a well-crystallized phase with better structural and electrical properties.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The as-deposited and 500 °C–annealed Ga₂O₃ films were amorphous, and except for the strong Si peak, no Ga₂O₃ diffraction peaks were detected.\\nWhen the annealing temperature was increased to 700 °C, the film transformed into β phase-Ga₂O₃ with a preferred (400) orientation. The intensity of this (400) peak increased further with higher annealing temperatures.\\nAt 900 °C, the film showed additional orientations, including (002) and/or (–202), indicating the development of more crystalline planes at higher temperatures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The films changed from amorphous to crystalline β-Ga₂O₃ with distinct orientations as the annealing temperature increased.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes.\\nAnnealing generally improves the performance of Ga₂O₃ thin films. By increasing the annealing temperature, the films transform from an amorphous state to a well-crystallized β-Ga₂O₃ phase, develop stronger preferred orientations, and reduce structural defects. These improvements usually enhance electrical, optical, and structural properties, leading to better overall film performance.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_46_fig_1.jpg","caption":"FIG. 1. XPS spectra of (a) the $S2s$ peak and (b) the As $3d$ peak for (i) unpassivated InGaAs, (ii) $50^{\\circ}\\mathrm{C}$ (iii) $200^{\\circ}\\mathrm{C}$ (iv) $350^{\\circ}\\mathrm{C}$ in situ $\\mathrm{H}_2\\mathrm{S}$ passivated InGaAs, and (v) ex situ aqueous $(\\mathrm{NH_4})_2\\mathrm{S}$ passivated InGaAs.","id":"validation/atomic-layer-deposition/experimental-usecase/46/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/46/fig_1","subset":"stacked-spectra-chart","split":"validation","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/images/fig_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/OaConnor et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":669,"height":281,"image_format":"jpeg","image_sha256":"97e445a7f3df817a7972a5210c14d3a860d83fd7d02b99ac74f6d21bcae71c40","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":335,"y":2,"width":333,"height":276},{"panel_id":"a","x":1,"y":4,"width":367,"height":276}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS spectra of the S 2s peak\"},{\"panel_id\":\"b\",\"text\":\"XPS As 3d peak with (i) representing unpassivated InGaAs, in situ H2S passivated InGaAs at (ii) 50 °C, (iii) 200 °C and (iv) 350 °C. (v) represents ex situ aqueous (NH4)2S passivated InGaAs.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Spectrum | Peak Positions (eV) |\\n|----------|---------------------------|\\n| (v) | 218, 225 |\\n| (iv) | 218, 225 |\\n| (iii) | 218 |\\n| (ii) | 218 |\\n| (i) | 218 |\"},{\"panel_id\":\"b\",\"text\":\"| Spectrum | Peak Position & Range (eV) |\\n|----------|-----------------------------|\\n| (v) | 40 (~38–43) |\\n| (iv) | 40 (~38–43) |\\n| (iii) | 40 (~38–43) |\\n| (ii) | 40 (~38–42) |\\n| (i) | 40 (~40–42) , 45 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This XPS peak is selected to examine the effect of the passivation on suppressing native oxide growth due to the large chemical shift between the As 3d peak and that of the arsenic oxide.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the case of the unpassivated sample, a peak is observed at ~45 eV and assigned to As2O3. In the case of all the in situ passivated samples this peak is not evident, indicating that this approach is effective in preventing As2O3 formation on the InGaAs surface. This is desirable as it has been reported that the unstable As2O3 can react to form elemental As which results in Fermi level pinning.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"S 2s peak is detected in the following samples : V) ex-situ IV)350 °C in-situ\\nS 2s peak is not detected in these samples: I) unpassivated II) 50 °C and III) 200 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"S 2s peak is detected in the following samples : V) ex-situ IV)350 °C in-situ\\nS 2s peak is not detected in these samples: II) 50 °C and III) 200 °C.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_58_fig_3.jpg","caption":"FIG. 3. XRD spectra of $20 \\mathrm{nm}$ Ti/20 nm PE-ALD Co/Si(001) after RTA at various annealing temperatures.","id":"validation/atomic-layer-deposition/experimental-usecase/58/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/58/fig_3","subset":"stacked-spectra-chart","split":"validation","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/Lee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":600,"height":595,"image_format":"jpeg","image_sha256":"a8d1a3d7cc2b950ebc1565d0501eecc4b03382852550b5902ab399097b0f9059","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":596,"height":593}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a series of X-ray diffraction patterns for PVD Ti/PE-ALD Co/Si(001) at different annealing temperatures (T_a). Peaks corresponding to CoSi_2 (200) and β-Co (111) are observed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (degree) | Intensity (a.u.) Ta=400|Intensity (a.u.) Ta=400|Intensity (a.u.) Ta=400|Intensity (a.u.) Ta=400|Intensity (a.u.) Ta=400|Intensity (a.u.) Ta=400|\\n|---|---|---|---|---|---|---|\\n| 20 | 0 | 0 | 0 | 0 | 0 | 0 |\\n| 30 | 0 | 0 | 0 | 0 | 0 | 0 |\\n| 33 | CoSi2 (200) | 0 | 0 | 0 | CoSi2 (200) | CoSi2 (200) |\\n| 40 | 0 | 0 | 0 | 0 | 0 | 0 |\\n| 44 | beta-Co (111) | beta-Co (111) | beta-Co (111) | 0 | 0 | 0 |\\n| 50 | 0 | 0 | 0 | 0 | 0 | 0 |\\n| 60 | 0 | 0 | 0 | 0 | 0 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"400, 800, and 900 degrees\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"400 degrees annealing is the only process that shows two crystalline phases, indicating a polycristalline film.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Eventhough the spectrum does not show this, there can still be crystalline material for higher angles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"beta-Co (111)\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG6.jpg","caption":"FIG. 6. Bragg-Brentano $(\\theta -2\\theta)$ scans diffractogram of the NiO films with a thickness of $\\sim 20\\mathrm{nm}$ . The reference diffractogram of NiO powder is obtained from the ICSD database (collection code-9866).","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG6","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG6","subset":"stacked-spectra-chart","split":"validation","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":669,"height":566,"image_format":"jpeg","image_sha256":"3136375360566098cec6594919c37c98d628c60f2353439a91e4eed90622e7c1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":668,"height":562}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents stacked XRD spectra of NiO films deposited using different precursors over the same 2θ range, together with a reference NiO pattern. Each film exhibits a dominant diffraction peak that coincides with the reference reflections, indicating formation of crystalline NiO. The relative peak positions are consistent across samples, while peak intensities differ between precursors. The reference spectrum at the bottom provides indexing of the (111) and (200) planes for comparison.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (°) | NiO_Alanis Intensity (cps) | NiO_MeCp Intensity (cps) | NiO_Bu-MeAMD Intensity (cps) | Reference Intensity (cps) |\\n|---|---|---|---|---|\\n| 35.0 | ~0.00 | ~0.00 | ~0.00 | 0 |\\n| 37.1 | ~0.12 | | ~1.55 | |\\n| 37.2 | | | | ~9000 |\\n| 40.0 | ~0.00 | ~0.00 | ~0.00 | 0 |\\n| 43.3 | ~1.15 | ~3.9 | | ~12000 |\\n| 45.0 | ~0.00 | ~0.00 | ~0.00 | 0 |\\n| 50.0 | ~0.00 | ~0.00 | ~0.00 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The dominant peaks in the deposited films align with the reference NiO reflections, particularly near the labeled (111) and (200) positions. This alignment indicates that the films share the same NiO phase as the reference. Differences between samples are mainly visible in relative peak intensity rather than peak position.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectra show that different films emphasize different NiO reflections relative to the reference. This suggests that the films do not all exhibit the same relative distribution of crystallographic orientations. The figure supports comparison of relative reflection dominance but does not provide direct information on underlying growth mechanisms.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Confirms phase matching between films and reference.\\n-Enables assignment of observed peaks to known NiO planes.\\n-Highlights alignment or absence of expected reflections.\\n-Provides a baseline for comparing relative peak intensity.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectra show that different precursors lead to different dominant NiO reflections. Such differences imply that films may not share the same crystallographic emphasis, which can be relevant for applications sensitive to orientation. The figure allows these differences to be compared directly without implying specific performance mechanisms.\"}]}]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_4_figure_5.jpg","caption":"Figure 5. In situ infrared absorption spectra recorded after Hacac dosing (step A) and BDEAS precursor dosing (step B) during ABC-type ALD of $\\mathrm{SiO}_2$ on (a) an $\\mathrm{Al}_2\\mathrm{O}_3$ -coated substrate and (b) a $\\mathrm{SiO}_2$ -coated substrate. The graph for $\\mathrm{Al}_2\\mathrm{O}_3$ shows the adsorption of a large amount of Hacac and the blocking of BDEAS precursor adsorption during the subsequent pulse. The graph for $\\mathrm{SiO}_2$ reveals that only a small amount of Hacac absorbs on $\\mathrm{SiO}_2$ , which does not significantly affect the adsorption of the BDEAS precursor. The spectra collected after steps A and B are both referenced to the starting surface (i.e., $\\mathrm{Al}_2\\mathrm{O}_3$ and $\\mathrm{SiO}_2$ ).","id":"validation/atomic-layer-deposition/simulation-usecase/4/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/4/figure_5","subset":"stacked-spectra-chart","split":"validation","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":1064,"height":427,"image_format":"jpeg","image_sha256":"3cca022a1f1fa279afaa0718d18240e733e6328417c5e0eb91deafefe179f647","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":6,"y":30,"width":515,"height":394},{"panel_id":"a","x":549,"y":34,"width":515,"height":391}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This spectral chart presents in-situ FTIR spectra showing the surface chemical species after key pulses in the ABC-type ALD process on Al₂O₃. It directly reveals the molecular mechanism behind the selective deposition observed earlier: Hacac (step A) strongly adsorbs on Al₂O₃, blocking BDEAS (step B).\"},{\"panel_id\":\"b\",\"text\":\"This figure presents in-situ FTIR spectra showing the surface chemical species after key pulses in the ABC-type ALD process on a different starting surface SiO₂. It directly reveals the molecular mechanism behind the selective deposition observed earlier: Hacac (step A) weakly adsorbs on SiO₂, allowing BDEAS to react.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance(BDEAS) | Absorbance(Hacac) |\\n|------------------|------------|-----------|\\n| 4000 | | |\\n| 3500 | | |\\n| 3000 | C-H |C-H |\\n| 2500 | | |\\n| 2000 | Si-H | |\\n| 1500 | Hacac | Hacac |\\n| 1000 | | |\"},{\"panel_id\":\"b\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance(BDEAS) | Absorbance(Hacac) |\\n|------------------|------------|-----------|\\n| 4000 | | |\\n| 3500 | | |\\n| 3000 | C-H |C-H |\\n| 2500 | | |\\n| 2000 | Si-H | |\\n| 1500 | Hacac | Hacac |\\n| 1000 | | |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The presence of reactive Lewis acid sites (Al³⁺ centers) on the Al₂O₃ surface, which readily coordinate with the oxygen atoms in the Hacac ligand.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This makes area-selective SiO₂ deposition straightforward. In a structure with SiO₂ fins and Al₂O₃ spacers, the ABC cycles will coat only the SiO₂ fins. The FTIR results confirm that the blocking layer works reliably and gives clean selectivity needed for modern device fabrication.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After Hacac (A) Pulse: Surface covered with Hacac ligands (peaks ~1500-1600 & ~2900-3000 cm⁻¹).\\n\\nAfter BDEAS (B) Pulse: Surface still dominated by Hacac ligands; minimal new Si-H or C-H from BDEAS, indicating blocked adsorption.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Hacac binds very strongly to Al₂O₃ but only weakly to SiO₂. This means it can block reactions on Al₂O₃ very effectively, giving good selectivity. However, because it sticks so strongly, it may be harder to remove, which can limit how many selective cycles you can run or require an extra cleaning step. A weaker inhibitor would be easier to remove but would not give as strong a selectivity.\"}]}]"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig_4.jpg","caption":"FIG. 4. XRD patterns of as-deposited $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ thin film and of those annealed at various RTA temperatures.","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig_4","subset":"stacked-spectra-chart","split":"validation","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The multilayer plot shows the X-ray diffraction patterns of the as-deposited Ga₂O₃ thin film and the films annealed at 500 °C, 700 °C, and 900 °C temperatures. Crystallinity seems to improve and newer peaks started to reflect for higher annealing temperatures.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2 Theta (degrees) | As-deposit | 500°C | 700°C | 900°C |\\n|---|---|---|---|---|\\n| 25 | | | | |\\n| 30 | | | | |\\n| 35 | | | | |\\n| 40 | | | | |\\n| 45 | | | | |\\n| 50 | | | | |\\n| 55 | | | | |\\n| 60 | | | | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The main objective of annealing the as-deposited Ga₂O₃ thin films at high temperatures is to improve their crystallinity, remove defects, and transform the film from an amorphous or poorly ordered state into a well-crystallized phase with better structural and electrical properties.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The as-deposited and 500 °C–annealed Ga₂O₃ films were amorphous, and except for the strong Si peak, no Ga₂O₃ diffraction peaks were detected.\\nWhen the annealing temperature was increased to 700 °C, the film transformed into β phase-Ga₂O₃ with a preferred (400) orientation. The intensity of this (400) peak increased further with higher annealing temperatures.\\nAt 900 °C, the film showed additional orientations, including (002) and/or (–202), indicating the development of more crystalline planes at higher temperatures.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The films changed from amorphous to crystalline β-Ga₂O₃ with distinct orientations as the annealing temperature increased.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes.\\nAnnealing generally improves the performance of Ga₂O₃ thin films. By increasing the annealing temperature, the films transform from an amorphous state to a well-crystallized β-Ga₂O₃ phase, develop stronger preferred orientations, and reduce structural defects. These improvements usually enhance electrical, optical, and structural properties, leading to better overall film performance.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":4,"width":474,"height":362}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":475,"height":367,"image_format":"jpeg","image_sha256":"5133e3c874d318e7fc15e52dd120d3e8b1698aa430dfc9efbe5b224406b45b43","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_46_fig_1.jpg","caption":"FIG. 1. XPS spectra of (a) the $S2s$ peak and (b) the As $3d$ peak for (i) unpassivated InGaAs, (ii) $50^{\\circ}\\mathrm{C}$ (iii) $200^{\\circ}\\mathrm{C}$ (iv) $350^{\\circ}\\mathrm{C}$ in situ $\\mathrm{H}_2\\mathrm{S}$ passivated InGaAs, and (v) ex situ aqueous $(\\mathrm{NH_4})_2\\mathrm{S}$ passivated InGaAs.","id":"validation/atomic-layer-deposition/experimental-usecase/46/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/46/fig_1","subset":"stacked-spectra-chart","split":"validation","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"XPS spectra of the S 2s peak\"},{\"panel_id\":\"b\",\"text\":\"XPS As 3d peak with (i) representing unpassivated InGaAs, in situ H2S passivated InGaAs at (ii) 50 °C, (iii) 200 °C and (iv) 350 °C. (v) represents ex situ aqueous (NH4)2S passivated InGaAs.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Spectrum | Peak Positions (eV) |\\n|----------|---------------------------|\\n| (v) | 218, 225 |\\n| (iv) | 218, 225 |\\n| (iii) | 218 |\\n| (ii) | 218 |\\n| (i) | 218 |\"},{\"panel_id\":\"b\",\"text\":\"| Spectrum | Peak Position & Range (eV) |\\n|----------|-----------------------------|\\n| (v) | 40 (~38–43) |\\n| (iv) | 40 (~38–43) |\\n| (iii) | 40 (~38–43) |\\n| (ii) | 40 (~38–42) |\\n| (i) | 40 (~40–42) , 45 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This XPS peak is selected to examine the effect of the passivation on suppressing native oxide growth due to the large chemical shift between the As 3d peak and that of the arsenic oxide.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In the case of the unpassivated sample, a peak is observed at ~45 eV and assigned to As2O3. In the case of all the in situ passivated samples this peak is not evident, indicating that this approach is effective in preventing As2O3 formation on the InGaAs surface. This is desirable as it has been reported that the unstable As2O3 can react to form elemental As which results in Fermi level pinning.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"S 2s peak is detected in the following samples : V) ex-situ IV)350 °C in-situ\\nS 2s peak is not detected in these samples: I) unpassivated II) 50 °C and III) 200 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"S 2s peak is detected in the following samples : V) ex-situ IV)350 °C in-situ\\nS 2s peak is not detected in these samples: II) 50 °C and III) 200 °C.\"}]}]","bbox":[{"panel_id":"b","x":335,"y":2,"width":333,"height":276},{"panel_id":"a","x":1,"y":4,"width":367,"height":276}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/images/fig_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/OaConnor et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":669,"height":281,"image_format":"jpeg","image_sha256":"97e445a7f3df817a7972a5210c14d3a860d83fd7d02b99ac74f6d21bcae71c40","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_58_fig_3.jpg","caption":"FIG. 3. XRD spectra of $20 \\mathrm{nm}$ Ti/20 nm PE-ALD Co/Si(001) after RTA at various annealing temperatures.","id":"validation/atomic-layer-deposition/experimental-usecase/58/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/58/fig_3","subset":"stacked-spectra-chart","split":"validation","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a series of X-ray diffraction patterns for PVD Ti/PE-ALD Co/Si(001) at different annealing temperatures (T_a). Peaks corresponding to CoSi_2 (200) and β-Co (111) are observed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (degree) | Intensity (a.u.) Ta=400|Intensity (a.u.) Ta=400|Intensity (a.u.) Ta=400|Intensity (a.u.) Ta=400|Intensity (a.u.) Ta=400|Intensity (a.u.) Ta=400|\\n|---|---|---|---|---|---|---|\\n| 20 | 0 | 0 | 0 | 0 | 0 | 0 |\\n| 30 | 0 | 0 | 0 | 0 | 0 | 0 |\\n| 33 | CoSi2 (200) | 0 | 0 | 0 | CoSi2 (200) | CoSi2 (200) |\\n| 40 | 0 | 0 | 0 | 0 | 0 | 0 |\\n| 44 | beta-Co (111) | beta-Co (111) | beta-Co (111) | 0 | 0 | 0 |\\n| 50 | 0 | 0 | 0 | 0 | 0 | 0 |\\n| 60 | 0 | 0 | 0 | 0 | 0 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"400, 800, and 900 degrees\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"400 degrees annealing is the only process that shows two crystalline phases, indicating a polycristalline film.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Eventhough the spectrum does not show this, there can still be crystalline material for higher angles.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"beta-Co (111)\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":596,"height":593}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/Lee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":600,"height":595,"image_format":"jpeg","image_sha256":"a8d1a3d7cc2b950ebc1565d0501eecc4b03382852550b5902ab399097b0f9059","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG6.jpg","caption":"FIG. 6. Bragg-Brentano $(\\theta -2\\theta)$ scans diffractogram of the NiO films with a thickness of $\\sim 20\\mathrm{nm}$ . The reference diffractogram of NiO powder is obtained from the ICSD database (collection code-9866).","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG6","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG6","subset":"stacked-spectra-chart","split":"validation","classification":[{"panel_id":"a","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure presents stacked XRD spectra of NiO films deposited using different precursors over the same 2θ range, together with a reference NiO pattern. Each film exhibits a dominant diffraction peak that coincides with the reference reflections, indicating formation of crystalline NiO. The relative peak positions are consistent across samples, while peak intensities differ between precursors. The reference spectrum at the bottom provides indexing of the (111) and (200) planes for comparison.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| 2θ (°) | NiO_Alanis Intensity (cps) | NiO_MeCp Intensity (cps) | NiO_Bu-MeAMD Intensity (cps) | Reference Intensity (cps) |\\n|---|---|---|---|---|\\n| 35.0 | ~0.00 | ~0.00 | ~0.00 | 0 |\\n| 37.1 | ~0.12 | | ~1.55 | |\\n| 37.2 | | | | ~9000 |\\n| 40.0 | ~0.00 | ~0.00 | ~0.00 | 0 |\\n| 43.3 | ~1.15 | ~3.9 | | ~12000 |\\n| 45.0 | ~0.00 | ~0.00 | ~0.00 | 0 |\\n| 50.0 | ~0.00 | ~0.00 | ~0.00 | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The dominant peaks in the deposited films align with the reference NiO reflections, particularly near the labeled (111) and (200) positions. This alignment indicates that the films share the same NiO phase as the reference. Differences between samples are mainly visible in relative peak intensity rather than peak position.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectra show that different films emphasize different NiO reflections relative to the reference. This suggests that the films do not all exhibit the same relative distribution of crystallographic orientations. The figure supports comparison of relative reflection dominance but does not provide direct information on underlying growth mechanisms.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Confirms phase matching between films and reference.\\n-Enables assignment of observed peaks to known NiO planes.\\n-Highlights alignment or absence of expected reflections.\\n-Provides a baseline for comparing relative peak intensity.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The spectra show that different precursors lead to different dominant NiO reflections. Such differences imply that films may not share the same crystallographic emphasis, which can be relevant for applications sensitive to orientation. The figure allows these differences to be compared directly without implying specific performance mechanisms.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":2,"width":668,"height":562}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:image_caption"},"width":669,"height":566,"image_format":"jpeg","image_sha256":"3136375360566098cec6594919c37c98d628c60f2353439a91e4eed90622e7c1","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_4_figure_5.jpg","caption":"Figure 5. In situ infrared absorption spectra recorded after Hacac dosing (step A) and BDEAS precursor dosing (step B) during ABC-type ALD of $\\mathrm{SiO}_2$ on (a) an $\\mathrm{Al}_2\\mathrm{O}_3$ -coated substrate and (b) a $\\mathrm{SiO}_2$ -coated substrate. The graph for $\\mathrm{Al}_2\\mathrm{O}_3$ shows the adsorption of a large amount of Hacac and the blocking of BDEAS precursor adsorption during the subsequent pulse. The graph for $\\mathrm{SiO}_2$ reveals that only a small amount of Hacac absorbs on $\\mathrm{SiO}_2$ , which does not significantly affect the adsorption of the BDEAS precursor. The spectra collected after steps A and B are both referenced to the starting surface (i.e., $\\mathrm{Al}_2\\mathrm{O}_3$ and $\\mathrm{SiO}_2$ ).","id":"validation/atomic-layer-deposition/simulation-usecase/4/figure_5","sample_id":"atomic-layer-deposition/simulation-usecase/4/figure_5","subset":"stacked-spectra-chart","split":"validation","classification":[{"panel_id":"a","label":"stacked spectra chart"},{"panel_id":"b","label":"stacked spectra chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This spectral chart presents in-situ FTIR spectra showing the surface chemical species after key pulses in the ABC-type ALD process on Al₂O₃. It directly reveals the molecular mechanism behind the selective deposition observed earlier: Hacac (step A) strongly adsorbs on Al₂O₃, blocking BDEAS (step B).\"},{\"panel_id\":\"b\",\"text\":\"This figure presents in-situ FTIR spectra showing the surface chemical species after key pulses in the ABC-type ALD process on a different starting surface SiO₂. It directly reveals the molecular mechanism behind the selective deposition observed earlier: Hacac (step A) weakly adsorbs on SiO₂, allowing BDEAS to react.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance(BDEAS) | Absorbance(Hacac) |\\n|------------------|------------|-----------|\\n| 4000 | | |\\n| 3500 | | |\\n| 3000 | C-H |C-H |\\n| 2500 | | |\\n| 2000 | Si-H | |\\n| 1500 | Hacac | Hacac |\\n| 1000 | | |\"},{\"panel_id\":\"b\",\"text\":\"| Wavenumber (cm⁻¹) | Absorbance(BDEAS) | Absorbance(Hacac) |\\n|------------------|------------|-----------|\\n| 4000 | | |\\n| 3500 | | |\\n| 3000 | C-H |C-H |\\n| 2500 | | |\\n| 2000 | Si-H | |\\n| 1500 | Hacac | Hacac |\\n| 1000 | | |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The presence of reactive Lewis acid sites (Al³⁺ centers) on the Al₂O₃ surface, which readily coordinate with the oxygen atoms in the Hacac ligand.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This makes area-selective SiO₂ deposition straightforward. In a structure with SiO₂ fins and Al₂O₃ spacers, the ABC cycles will coat only the SiO₂ fins. The FTIR results confirm that the blocking layer works reliably and gives clean selectivity needed for modern device fabrication.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"After Hacac (A) Pulse: Surface covered with Hacac ligands (peaks ~1500-1600 & ~2900-3000 cm⁻¹).\\n\\nAfter BDEAS (B) Pulse: Surface still dominated by Hacac ligands; minimal new Si-H or C-H from BDEAS, indicating blocked adsorption.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Hacac binds very strongly to Al₂O₃ but only weakly to SiO₂. This means it can block reactions on Al₂O₃ very effectively, giving good selectivity. However, because it sticks so strongly, it may be harder to remove, which can limit how many selective cycles you can run or require an extra cleaning step. A weaker inhibitor would be easier to remove but would not give as strong a selectivity.\"}]}]","bbox":[{"panel_id":"b","x":6,"y":30,"width":515,"height":394},{"panel_id":"a","x":549,"y":34,"width":515,"height":391}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"stacked spectra chart","caption_source":"content.json:img_caption"},"width":1064,"height":427,"image_format":"jpeg","image_sha256":"3cca022a1f1fa279afaa0718d18240e733e6328417c5e0eb91deafefe179f647","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/table/train/metadata.jsonl b/subsets/table/train/metadata.jsonl index 96f4a06bdd123d7e2481e54e21be06bbe460f358..977f18a93e49463b8e114055df27eef4c97619aa 100644 --- a/subsets/table/train/metadata.jsonl +++ b/subsets/table/train/metadata.jsonl @@ -1,2 +1,2 @@ -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_35_a27ced502d67bd684cbf2f68460176ad15a149ac50a9328ff21b033b7c484cd8.jpg","caption":"Table 1. Process Parameters and Characteristics of Tellurides and Selenides Prepared by ALD Using $(\\mathsf{Et}_3\\mathsf{Si})_2\\mathsf{Te}$ and $(\\mathsf{Et}_3\\mathsf{Si})_2\\mathsf{Se}$ as Precursorsa","id":"train/atomic-layer-deposition/experimental-usecase/35/a27ced502d67bd684cbf2f68460176ad15a149ac50a9328ff21b033b7c484cd8","sample_id":"atomic-layer-deposition/experimental-usecase/35/a27ced502d67bd684cbf2f68460176ad15a149ac50a9328ff21b033b7c484cd8","subset":"table","split":"train","classification":[{"panel_id":"a","label":"table"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/a27ced502d67bd684cbf2f68460176ad15a149ac50a9328ff21b033b7c484cd8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/a27ced502d67bd684cbf2f68460176ad15a149ac50a9328ff21b033b7c484cd8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/Viljami Pore et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"table","caption_source":"content.json:table_caption"},"width":1406,"height":298,"image_format":"jpeg","image_sha256":"7e6e6702fd48f844ed30920236b12a4b4e2410b2277b6a79ff58d24539c699ec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1405,"height":296}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The table provides detailed information about various materials including their metal precursors, evaporation temperatures, growth temperatures, growth rates measured by EDX, and compositions analyzed by EDX.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| material | metal precursor/evaporation temperature | growth temperature (°C) | growth rate by EDX (Å/cycle) | composition by EDX |\\n|---|---|---|---|---|\\n| ZnTe | ZnCl₂/360 °C | 400 | 0.61 ± 0.05 | Zn 47%, Te 53% |\\n| Bi₂Te₃ | BiCl₃/140 °C | 165 | 1.21 ± 0.08 | Bi 40%, Te 60% |\\n| ZnSe | ZnCl₂/360 °C | 400 | 0.55 ± 0.04 | Zn 48%, Se 50%, Te 2%b |\\n| Bi₂Se₃ | BiCl₃/140 °C | 165 | 0.97 ± 0.07 | Bi 41%, Se 59% |\\n| In₂Se₃ | InCl₃/285 °C | 295 | 0.55 ± 0.04 | In 41%, Se 59% |\\n| CuSe | Cu(II) pivalate/155 °C | 165 | 0.63 ± 0.06 | Cu 50%, Se 50% |\\n| Cu₂ₓSe | Cu(II) pivalate/165 °C | 200 | 0.48 ± 0.05 | Cu 61%, Se 39% |\\n| Cu₂Se | Cu(II) pivalate/165 °C | 300 | 0.16 ± 0.03 | Cu 69%, Se 31% |\\n| Cu₂Se | CuCl/350 °C | 400 | | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Besides EDX, ellipsometry, XRR, and TEM can be used.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Bi2Te3, CuSe\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cu(II) pivalate.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.61 angstrom per cycle\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_54_1327273b261e55f58d47b4629c426348d3c32f7362d46dee84c1d586d14f3ab5.jpg","caption":"Table 1. Overview of Theoretical Studies of $\\mathbf{SiO}_2$ ALD","id":"train/atomic-layer-deposition/simulation-usecase/54/1327273b261e55f58d47b4629c426348d3c32f7362d46dee84c1d586d14f3ab5","sample_id":"atomic-layer-deposition/simulation-usecase/54/1327273b261e55f58d47b4629c426348d3c32f7362d46dee84c1d586d14f3ab5","subset":"table","split":"train","classification":[{"panel_id":"a","label":"table"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/1327273b261e55f58d47b4629c426348d3c32f7362d46dee84c1d586d14f3ab5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/1327273b261e55f58d47b4629c426348d3c32f7362d46dee84c1d586d14f3ab5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/Guoyong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"table","caption_source":"content.json:table_caption"},"width":673,"height":692,"image_format":"jpeg","image_sha256":"2838bdc851f87a39b59decf83dbe525cd328a457a5ff5b735d5f93d1a3735463","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":669,"height":688}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_35_a27ced502d67bd684cbf2f68460176ad15a149ac50a9328ff21b033b7c484cd8.jpg","caption":"Table 1. Process Parameters and Characteristics of Tellurides and Selenides Prepared by ALD Using $(\\mathsf{Et}_3\\mathsf{Si})_2\\mathsf{Te}$ and $(\\mathsf{Et}_3\\mathsf{Si})_2\\mathsf{Se}$ as Precursorsa","id":"train/atomic-layer-deposition/experimental-usecase/35/a27ced502d67bd684cbf2f68460176ad15a149ac50a9328ff21b033b7c484cd8","sample_id":"atomic-layer-deposition/experimental-usecase/35/a27ced502d67bd684cbf2f68460176ad15a149ac50a9328ff21b033b7c484cd8","subset":"table","split":"train","classification":[{"panel_id":"a","label":"table"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The table provides detailed information about various materials including their metal precursors, evaporation temperatures, growth temperatures, growth rates measured by EDX, and compositions analyzed by EDX.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| material | metal precursor/evaporation temperature | growth temperature (°C) | growth rate by EDX (Å/cycle) | composition by EDX |\\n|---|---|---|---|---|\\n| ZnTe | ZnCl₂/360 °C | 400 | 0.61 ± 0.05 | Zn 47%, Te 53% |\\n| Bi₂Te₃ | BiCl₃/140 °C | 165 | 1.21 ± 0.08 | Bi 40%, Te 60% |\\n| ZnSe | ZnCl₂/360 °C | 400 | 0.55 ± 0.04 | Zn 48%, Se 50%, Te 2%b |\\n| Bi₂Se₃ | BiCl₃/140 °C | 165 | 0.97 ± 0.07 | Bi 41%, Se 59% |\\n| In₂Se₃ | InCl₃/285 °C | 295 | 0.55 ± 0.04 | In 41%, Se 59% |\\n| CuSe | Cu(II) pivalate/155 °C | 165 | 0.63 ± 0.06 | Cu 50%, Se 50% |\\n| Cu₂ₓSe | Cu(II) pivalate/165 °C | 200 | 0.48 ± 0.05 | Cu 61%, Se 39% |\\n| Cu₂Se | Cu(II) pivalate/165 °C | 300 | 0.16 ± 0.03 | Cu 69%, Se 31% |\\n| Cu₂Se | CuCl/350 °C | 400 | | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Besides EDX, ellipsometry, XRR, and TEM can be used.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Bi2Te3, CuSe\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cu(II) pivalate.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.61 angstrom per cycle\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1405,"height":296}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/a27ced502d67bd684cbf2f68460176ad15a149ac50a9328ff21b033b7c484cd8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/a27ced502d67bd684cbf2f68460176ad15a149ac50a9328ff21b033b7c484cd8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/Viljami Pore et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"table","caption_source":"content.json:table_caption"},"width":1406,"height":298,"image_format":"jpeg","image_sha256":"7e6e6702fd48f844ed30920236b12a4b4e2410b2277b6a79ff58d24539c699ec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_54_1327273b261e55f58d47b4629c426348d3c32f7362d46dee84c1d586d14f3ab5.jpg","caption":"Table 1. Overview of Theoretical Studies of $\\mathbf{SiO}_2$ ALD","id":"train/atomic-layer-deposition/simulation-usecase/54/1327273b261e55f58d47b4629c426348d3c32f7362d46dee84c1d586d14f3ab5","sample_id":"atomic-layer-deposition/simulation-usecase/54/1327273b261e55f58d47b4629c426348d3c32f7362d46dee84c1d586d14f3ab5","subset":"table","split":"train","classification":[{"panel_id":"a","label":"table"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":0,"width":669,"height":688}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/1327273b261e55f58d47b4629c426348d3c32f7362d46dee84c1d586d14f3ab5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/1327273b261e55f58d47b4629c426348d3c32f7362d46dee84c1d586d14f3ab5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/Guoyong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"table","caption_source":"content.json:table_caption"},"width":673,"height":692,"image_format":"jpeg","image_sha256":"2838bdc851f87a39b59decf83dbe525cd328a457a5ff5b735d5f93d1a3735463","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/timeline-chart/validation/metadata.jsonl b/subsets/timeline-chart/validation/metadata.jsonl index 63a0d0598714ca72f3efa72c7a369eefe46e001a..e9cfb95341da8bea93208bc869f45cdd0eafa654 100644 --- a/subsets/timeline-chart/validation/metadata.jsonl +++ b/subsets/timeline-chart/validation/metadata.jsonl @@ -1,2 +1,2 @@ -{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_15_fig_8.jpg","caption":"FIG. 8. Timeline of highlighted ALE reports between 1988 and 2014.","id":"validation/atomic-layer-etching/experimental-usecase/15/fig_8","sample_id":"atomic-layer-etching/experimental-usecase/15/fig_8","subset":"timeline-chart","split":"validation","classification":[{"panel_id":"a","label":"timeline chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"timeline chart","caption_source":"content.json:img_caption"},"width":1275,"height":483,"image_format":"jpeg","image_sha256":"dec6706d4d8fc27264986e2c176ea67d0b94566d361fed1ef3ac7b96a60c0e5a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":1275,"height":483}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_22_fig_8.jpg","caption":"FIG. 8. Timeline of highlighted ALE reports between 1988 and 2014.","id":"validation/atomic-layer-etching/simulation-usecase/22/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/22/fig_8","subset":"timeline-chart","split":"validation","classification":[{"panel_id":"a","label":"timeline chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/Review Paper -- Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"timeline chart","caption_source":"content.json:img_caption"},"width":1275,"height":483,"image_format":"jpeg","image_sha256":"dec6706d4d8fc27264986e2c176ea67d0b94566d361fed1ef3ac7b96a60c0e5a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":1266,"height":480}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The timeline chart illustrates the chronological progression of various research milestones and computational modelling advancements in materials science and technology from 1988 to 2014. Each milestone and advancement is referenced.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Year | Event | Reference |\\n|------|-------|-----------|\\n| 1988 | Diamond | [31] |\\n| 1989 | Directional III-V (GaAs) | [32] |\\n| 1990 | Directional Si with F | [33] |\\n| 1991 | Electrochemical (e.g., CdTe) | [105] |\\n| 1993 | Directional Si with Cl2, Isotropic III-Vs | [39], [34] |\\n| 1994 | Isotropic SiO2 with salts | [109] |\\n| 1997 | Computational modeling | - |\\n| 1998 | Comoutational modeling | - |\\n| 2001 | Neutral Beams | [83] |\\n| 2007 | Concept of directional SiO2 with deposition | [102] |\\n| 2008 | Directional high-k dielectrics | [51] |\\n| 2011 | Graphene using Zn deposition | [123] |\\n| 2013 | Si plasma assisted, SiO2 with deposition | [6], [90] |\\n| 2014 | First ALE workshop | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 1997 and 1999.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"During the 1990's most ALE reports focused on the directional etching process. In the 2000's, etching processes included the use of plasma as a reactant.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2008.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The focus was primarily on the directional etching process, although a few isotropic processes were reported in 1993 and 1994.\"}]}]"} +{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_15_fig_8.jpg","caption":"FIG. 8. Timeline of highlighted ALE reports between 1988 and 2014.","id":"validation/atomic-layer-etching/experimental-usecase/15/fig_8","sample_id":"atomic-layer-etching/experimental-usecase/15/fig_8","subset":"timeline-chart","split":"validation","classification":[{"panel_id":"a","label":"timeline chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1275,"height":483}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"timeline chart","caption_source":"content.json:img_caption"},"width":1275,"height":483,"image_format":"jpeg","image_sha256":"dec6706d4d8fc27264986e2c176ea67d0b94566d361fed1ef3ac7b96a60c0e5a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_22_fig_8.jpg","caption":"FIG. 8. Timeline of highlighted ALE reports between 1988 and 2014.","id":"validation/atomic-layer-etching/simulation-usecase/22/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/22/fig_8","subset":"timeline-chart","split":"validation","classification":[{"panel_id":"a","label":"timeline chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The timeline chart illustrates the chronological progression of various research milestones and computational modelling advancements in materials science and technology from 1988 to 2014. Each milestone and advancement is referenced.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Year | Event | Reference |\\n|------|-------|-----------|\\n| 1988 | Diamond | [31] |\\n| 1989 | Directional III-V (GaAs) | [32] |\\n| 1990 | Directional Si with F | [33] |\\n| 1991 | Electrochemical (e.g., CdTe) | [105] |\\n| 1993 | Directional Si with Cl2, Isotropic III-Vs | [39], [34] |\\n| 1994 | Isotropic SiO2 with salts | [109] |\\n| 1997 | Computational modeling | - |\\n| 1998 | Comoutational modeling | - |\\n| 2001 | Neutral Beams | [83] |\\n| 2007 | Concept of directional SiO2 with deposition | [102] |\\n| 2008 | Directional high-k dielectrics | [51] |\\n| 2011 | Graphene using Zn deposition | [123] |\\n| 2013 | Si plasma assisted, SiO2 with deposition | [6], [90] |\\n| 2014 | First ALE workshop | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 1997 and 1999.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"During the 1990's most ALE reports focused on the directional etching process. In the 2000's, etching processes included the use of plasma as a reactant.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2008.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The focus was primarily on the directional etching process, although a few isotropic processes were reported in 1993 and 1994.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":3,"width":1266,"height":480}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/Review Paper -- Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"timeline chart","caption_source":"content.json:img_caption"},"width":1275,"height":483,"image_format":"jpeg","image_sha256":"dec6706d4d8fc27264986e2c176ea67d0b94566d361fed1ef3ac7b96a60c0e5a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/unknown/test/metadata.jsonl b/subsets/unknown/test/metadata.jsonl index 3339f095aee24df47a882a83553b525cedcd1a91..de752b5158aae04791a6f1d15e35b0bcaac7763c 100644 --- a/subsets/unknown/test/metadata.jsonl +++ b/subsets/unknown/test/metadata.jsonl @@ -1,9 +1,9 @@ -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_10.jpg","caption":"Fig. 10. Reactor geometry [3] used for numerical calculation of growth rate at the diffusion-limited regime.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_10","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_10","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":431,"height":545,"image_format":"jpeg","image_sha256":"b4566cd5d6449ba08522ca637774a14ca4f75e30de1c913c61a78bf75e452f47","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":4,"y":2,"width":421,"height":541}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_12.jpg","caption":"Fig. 12. Reactor geometry and boundary conditions [29] used for calculation growth rate as a function of V/III ratio.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_12","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_12","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":595,"height":261,"image_format":"jpeg","image_sha256":"29a63881c7f7b2272a1d65e01768d4a32c4aaab3e758af4d36553ab8fd048659","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":6,"width":590,"height":254}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_15.jpg","caption":"Fig. 15. Schematic drawing of the reactor geometry used to simulate Thomas Swan Ltd. reactor [30].","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_15","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_15","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_15.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":528,"height":603,"image_format":"jpeg","image_sha256":"cc3690cfceeca62f7f06e6ca91a4c34f21569352915fb1721e6f95fdbe37de8e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":524,"height":599}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_5.jpg","caption":"Fig. 5. Reactor geometry and boundary conditions [28] used for calculation of growth rate at different temperatures using CFD-ACE+™.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_5","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":594,"height":227,"image_format":"jpeg","image_sha256":"96aed57db68302cb37797014001edead282f569dc469232b54e070a60b7c34cf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":3,"y":3,"width":589,"height":225}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_7.jpg","caption":"Fig. 7. Reactor geometry and boundary conditions [5] used for growth calculations.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_7","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":373,"height":467,"image_format":"jpeg","image_sha256":"52ab1962a33363a644271af45ffec5859f97bbee37f6a1fbebd38eadbf2d4102","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":8,"y":7,"width":360,"height":447}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_33_9ea421572681260b6763db0029a2b2c35c7952a0f2020dffa5d1beb015936afc.jpg","caption":"","id":"test/atomic-layer-deposition/simulation-usecase/33/9ea421572681260b6763db0029a2b2c35c7952a0f2020dffa5d1beb015936afc","sample_id":"atomic-layer-deposition/simulation-usecase/33/9ea421572681260b6763db0029a2b2c35c7952a0f2020dffa5d1beb015936afc","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/9ea421572681260b6763db0029a2b2c35c7952a0f2020dffa5d1beb015936afc.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/9ea421572681260b6763db0029a2b2c35c7952a0f2020dffa5d1beb015936afc.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"not_found"},"width":650,"height":375,"image_format":"jpeg","image_sha256":"68812c6b69d2a8eb383bbf6729a4736545cca69dc2c30e61d62058872819b8fb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":7,"width":643,"height":367}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_1_figure_5.jpg","caption":"Figure 5. (a) A representation of a multi-color selectivity patterning scheme, (b) goal is to successfully remove the one \"color\" material with high selectivity to the other colors and no corner rounding.","id":"test/atomic-layer-etching/experimental-usecase/1/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/1/figure_5","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/Atomic Layer Etching An Industry Perspective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":675,"height":233,"image_format":"jpeg","image_sha256":"a61c7011fe159cd397b0e868311c524ce1cbc73e49971044a9f842de9a019a00","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":324,"height":196},{"panel_id":"b","x":355,"y":11,"width":320,"height":222}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_13.jpg","caption":"Fig. 13. AFM images of: (a) initial CoO thin films and (b) initial CoO film after 300 ALE cycles of sequential Hacac and $\\mathrm{O_3}$ exposures at $250^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-etching/experimental-usecase/21/fig_13","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_13","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_13.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":528,"height":1353,"image_format":"jpeg","image_sha256":"771f10fac759a380cd786f7e84ac6145e8d26166d76e2632a93f205ff8fe419a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":1,"width":525,"height":669},{"panel_id":"b","x":1,"y":660,"width":525,"height":689}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/test_atomic-layer-etching_experimental-usecase_41_fig_6.jpg","caption":"FIG. 6. (a) Surface morphology and (b) average roughness were investigated by atomic force microscopy of reference material, and a TiN film after 10, 30, and 50 cycles of the ALE process. The oxidation step was performed using $\\mathrm{O_2}$ at 5 SCCM, 0.05 Torr, $100^{\\circ}\\mathrm{C}$ , and $15W$ , and the fluorination step was performed using $\\mathrm{CF_4}$ at 2 SCCM, 0.03 Torr, $100^{\\circ}\\mathrm{C}$ , and $15W$ . At the removal step, the temperature was increased to $150^{\\circ}\\mathrm{C}$ with an Ar of 50 SCCM for $30s$ without RF power.","id":"test/atomic-layer-etching/experimental-usecase/41/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/41/fig_6","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"line chart"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/Plasma atomic layer etching for titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:image_caption"},"width":669,"height":1078,"image_format":"jpeg","image_sha256":"fbaf7ce6fdf08f2d8014006265c5b723c6b785098e49a143cd4feb2655d3bde5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":19,"y":44,"width":641,"height":444},{"panel_id":"b","x":69,"y":561,"width":596,"height":511}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_10.jpg","caption":"Fig. 10. Reactor geometry [3] used for numerical calculation of growth rate at the diffusion-limited regime.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_10","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_10","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":2,"width":421,"height":541}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":431,"height":545,"image_format":"jpeg","image_sha256":"b4566cd5d6449ba08522ca637774a14ca4f75e30de1c913c61a78bf75e452f47","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_12.jpg","caption":"Fig. 12. Reactor geometry and boundary conditions [29] used for calculation growth rate as a function of V/III ratio.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_12","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_12","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":6,"width":590,"height":254}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":595,"height":261,"image_format":"jpeg","image_sha256":"29a63881c7f7b2272a1d65e01768d4a32c4aaab3e758af4d36553ab8fd048659","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_15.jpg","caption":"Fig. 15. Schematic drawing of the reactor geometry used to simulate Thomas Swan Ltd. reactor [30].","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_15","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_15","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":2,"width":524,"height":599}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_15.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":528,"height":603,"image_format":"jpeg","image_sha256":"cc3690cfceeca62f7f06e6ca91a4c34f21569352915fb1721e6f95fdbe37de8e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_5.jpg","caption":"Fig. 5. Reactor geometry and boundary conditions [28] used for calculation of growth rate at different temperatures using CFD-ACE+™.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_5","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":3,"width":589,"height":225}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":594,"height":227,"image_format":"jpeg","image_sha256":"96aed57db68302cb37797014001edead282f569dc469232b54e070a60b7c34cf","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_7.jpg","caption":"Fig. 7. Reactor geometry and boundary conditions [5] used for growth calculations.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_7","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":8,"y":7,"width":360,"height":447}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":373,"height":467,"image_format":"jpeg","image_sha256":"52ab1962a33363a644271af45ffec5859f97bbee37f6a1fbebd38eadbf2d4102","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_33_9ea421572681260b6763db0029a2b2c35c7952a0f2020dffa5d1beb015936afc.jpg","caption":"","id":"test/atomic-layer-deposition/simulation-usecase/33/9ea421572681260b6763db0029a2b2c35c7952a0f2020dffa5d1beb015936afc","sample_id":"atomic-layer-deposition/simulation-usecase/33/9ea421572681260b6763db0029a2b2c35c7952a0f2020dffa5d1beb015936afc","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":7,"y":7,"width":643,"height":367}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/9ea421572681260b6763db0029a2b2c35c7952a0f2020dffa5d1beb015936afc.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/9ea421572681260b6763db0029a2b2c35c7952a0f2020dffa5d1beb015936afc.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"not_found"},"width":650,"height":375,"image_format":"jpeg","image_sha256":"68812c6b69d2a8eb383bbf6729a4736545cca69dc2c30e61d62058872819b8fb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_1_figure_5.jpg","caption":"Figure 5. (a) A representation of a multi-color selectivity patterning scheme, (b) goal is to successfully remove the one \"color\" material with high selectivity to the other colors and no corner rounding.","id":"test/atomic-layer-etching/experimental-usecase/1/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/1/figure_5","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":324,"height":196},{"panel_id":"b","x":355,"y":11,"width":320,"height":222}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/Atomic Layer Etching An Industry Perspective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":675,"height":233,"image_format":"jpeg","image_sha256":"a61c7011fe159cd397b0e868311c524ce1cbc73e49971044a9f842de9a019a00","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_13.jpg","caption":"Fig. 13. AFM images of: (a) initial CoO thin films and (b) initial CoO film after 300 ALE cycles of sequential Hacac and $\\mathrm{O_3}$ exposures at $250^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-etching/experimental-usecase/21/fig_13","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_13","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":1,"width":525,"height":669},{"panel_id":"b","x":1,"y":660,"width":525,"height":689}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_13.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":528,"height":1353,"image_format":"jpeg","image_sha256":"771f10fac759a380cd786f7e84ac6145e8d26166d76e2632a93f205ff8fe419a","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/test_atomic-layer-etching_experimental-usecase_41_fig_6.jpg","caption":"FIG. 6. (a) Surface morphology and (b) average roughness were investigated by atomic force microscopy of reference material, and a TiN film after 10, 30, and 50 cycles of the ALE process. The oxidation step was performed using $\\mathrm{O_2}$ at 5 SCCM, 0.05 Torr, $100^{\\circ}\\mathrm{C}$ , and $15W$ , and the fluorination step was performed using $\\mathrm{CF_4}$ at 2 SCCM, 0.03 Torr, $100^{\\circ}\\mathrm{C}$ , and $15W$ . At the removal step, the temperature was increased to $150^{\\circ}\\mathrm{C}$ with an Ar of 50 SCCM for $30s$ without RF power.","id":"test/atomic-layer-etching/experimental-usecase/41/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/41/fig_6","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"line chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":19,"y":44,"width":641,"height":444},{"panel_id":"b","x":69,"y":561,"width":596,"height":511}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/Plasma atomic layer etching for titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:image_caption"},"width":669,"height":1078,"image_format":"jpeg","image_sha256":"fbaf7ce6fdf08f2d8014006265c5b723c6b785098e49a143cd4feb2655d3bde5","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/unknown/train/metadata.jsonl b/subsets/unknown/train/metadata.jsonl index c7838eecf1b79cf6f5500b48ca56ea519e5a5e7a..1940cd92461edde0b779c3a1c8d083c3aece583d 100644 --- a/subsets/unknown/train/metadata.jsonl +++ b/subsets/unknown/train/metadata.jsonl @@ -1,12 +1,12 @@ -{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_42_38547ce11117d4bfe67b96dae7afd2d6cff0ec861b80b873016629dd9663eadd.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/42/38547ce11117d4bfe67b96dae7afd2d6cff0ec861b80b873016629dd9663eadd","sample_id":"atomic-layer-deposition/experimental-usecase/42/38547ce11117d4bfe67b96dae7afd2d6cff0ec861b80b873016629dd9663eadd","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/38547ce11117d4bfe67b96dae7afd2d6cff0ec861b80b873016629dd9663eadd.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/38547ce11117d4bfe67b96dae7afd2d6cff0ec861b80b873016629dd9663eadd.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/Coyle et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"not_found"},"width":516,"height":375,"image_format":"jpeg","image_sha256":"85dbb0afd07301da0ab3abcea01d8e92859a1b605a2543fd132b621391f1e286","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":4,"width":513,"height":370}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_1.jpg","caption":"FIG. 1. (a) Simulation domain for a horizontal cross-flow reactor. The 2D domain has cylindrical symmetry and incorporates an expanding section bridging the inlet manifold with the reactor tube. A picture of our experimental setup is shown for comparison. (b) Simulation domain for a $300\\mathrm{mm}$ wafer reactor. The simulation domain comprises a circular disk with a $50\\mathrm{cm}$ diameter and $3\\mathrm{cm}$ diameter inlet and outlet regions. The height of the reactor is $2\\mathrm{cm}$ . A $300\\mathrm{mm}$ wafer region is placed at the center of the reactor and treated as a separate area. Only half of the reactor is modeled, with mirror boundary conditions used at the bisecting plane.","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_1","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":672,"height":844,"image_format":"jpeg","image_sha256":"a5c64eaa5e46eb411d08ed5d4abf3d5ebfd5e73ce8454e810980a8f42ecb7819","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"b","x":0,"y":571,"width":670,"height":267},{"panel_id":"a","x":5,"y":0,"width":666,"height":563}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_16.jpg","caption":"FIG. 16. Comparison between simulations and experimental results on a nontraditional experimental setup in which subsaturating pulses of TMA and $\\mathsf{H}_2\\mathbb{O}$ are introduced locally using a pair of injectors. (a) Experimental setup, showing a wafer coated at a speed of 1 cycle per second. (b) Comparison between experiments and simulated growth rates for a speed of 4.17 cycles per second. At this rate, purge times are so short that there is an overimposed nonself-limited component. This is captured in the simulation results, which show the total material deposited over three ALD cycles.","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_16","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_16","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"contour heatmap"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_16.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":667,"height":850,"image_format":"jpeg","image_sha256":"d8ec9e3361c19fe9ffeb00bed21161c87c15221693eb3580995c801d47dc1a13","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":667,"height":397},{"panel_id":"b","x":0,"y":431,"width":339,"height":418},{"panel_id":"c","x":341,"y":422,"width":336,"height":427}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_36_figure_4.jpg","caption":"Figure 4. (a) Side view of the initial MD simulation cell without TMA molecules, where ODPA SAMs are aligned through VDW interactions, with coverage of $2 \\times 2$ grid/molecule. MD snapshots to compare TMA movement at different TMA pressures: (b) 1.3 Torr (low pressure), captured from supporting movies 1-4 and (c) 8.9 Torr (high pressure), captured from supporting movies 5-8. (d) TMA concentration at 8.9 and 1.3 Torr over time $(0 - 10 \\mathrm{ns})$ .","id":"train/atomic-layer-deposition/simulation-usecase/36/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/36/figure_4","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"},{"panel_id":"c","label":"unknown"},{"panel_id":"d","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/Seunggi Seo et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":1272,"height":353,"image_format":"jpeg","image_sha256":"12734e15339aa708dce3dc0b6db69dd4e83987b1cec00accb85cb5f81c9ccc86","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":42,"y":14,"width":237,"height":305},{"panel_id":"b","x":308,"y":41,"width":240,"height":274},{"panel_id":"c","x":572,"y":65,"width":233,"height":248},{"panel_id":"d","x":846,"y":25,"width":421,"height":326}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_36_figure_6.jpg","caption":"Figure 6. (a) SEM image of a patterned sample; the bright part of this image corresponds to the area coated by ODPA and etched, whereas the dark part shows the $\\mathrm{Al}_2\\mathrm{O}_3$ deposited area. (b) EDS elemental line scans for Al and O observed along the red line in the SEM image of (a). (c) AFM image of $\\mathrm{Al}_2\\mathrm{O}_3$ on patterned ODPA and (d) height profiles of AFM line scans along the red line in (c).","id":"train/atomic-layer-deposition/simulation-usecase/36/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/36/figure_6","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"heatmap"},{"panel_id":"d","label":"spectra chart"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/Seunggi Seo et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":658,"height":589,"image_format":"jpeg","image_sha256":"65bfd86b2f0d86c13e92f66e8f7d3925ea6f3d5fda2c261a818ed98b06c1c7f9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":9,"y":0,"width":285,"height":290},{"panel_id":"b","x":352,"y":28,"width":306,"height":251},{"panel_id":"c","x":0,"y":314,"width":296,"height":264},{"panel_id":"d","x":337,"y":335,"width":321,"height":254}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_43_b56ead30cb1cd96ec5c166c53860b766aee63c3b20763054561678baa6a9e315.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/43/b56ead30cb1cd96ec5c166c53860b766aee63c3b20763054561678baa6a9e315","sample_id":"atomic-layer-deposition/simulation-usecase/43/b56ead30cb1cd96ec5c166c53860b766aee63c3b20763054561678baa6a9e315","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/b56ead30cb1cd96ec5c166c53860b766aee63c3b20763054561678baa6a9e315.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/b56ead30cb1cd96ec5c166c53860b766aee63c3b20763054561678baa6a9e315.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/Yuanxia Zheng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"not_found"},"width":672,"height":258,"image_format":"jpeg","image_sha256":"7cdca1e4b67dbdeb7ece9a9d9def8bd82184e5c06b84eb5277b7ed950e3e7eec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":332,"height":256},{"panel_id":"b","x":336,"y":0,"width":333,"height":255}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_28_fig_6.jpg","caption":"FIG. 6. (a) Surface morphology and (b) reduction of surface roughness after isotropic ALE process as a function of the number of cycles.","id":"train/atomic-layer-etching/experimental-usecase/28/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/28/fig_6","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"scatter plot"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/Atomic layer etching of Al2O3 with NF3 plasma fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:image_caption"},"width":673,"height":863,"image_format":"jpeg","image_sha256":"360b81d79310504fc53d6b1257fff8cccd96e860e488816170352f12be0f5883","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":74,"y":0,"width":594,"height":399},{"panel_id":"b","x":99,"y":439,"width":563,"height":396}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_12.jpg","caption":"Fig. 12. (Color online) (a) TEM image of the pattern sample after the $\\mathrm{C_4F_8}$ plasma treatment for $30~\\mathrm{s}$ . The atomic percentages of C, F, Ti, and Si obtained by EDX spectroscopy in (b) the upper portion and (c) the lower portion.","id":"train/atomic-layer-etching/experimental-usecase/36/fig_12","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_12","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:image_caption"},"width":686,"height":1231,"image_format":"jpeg","image_sha256":"bbcc376ebb921233e3caa57a88231efecaa0a64e2e59d24721213f7c844eed09","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":14,"width":655,"height":450},{"panel_id":"b","x":10,"y":474,"width":672,"height":364}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_38_fig_6.jpg","caption":"FIG. 6. AFM analysis of surface roughness after (a) 0, (b) 100, (c) 300, and (d) 400 ALE cycles. Ra (roughness average) and Rq (root mean squared) were captured from $5\\mu \\mathrm{m}$ scans.","id":"train/atomic-layer-etching/experimental-usecase/38/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/38/fig_6","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/High synergy atomic layer etching of AlGaNGaN.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:image_caption"},"width":1077,"height":1019,"image_format":"jpeg","image_sha256":"891436f4668476d722f9d6a12c0870029e22e02fb3107f30fd8a6b6fe37aa1ce","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":0,"width":1072,"height":1017}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_experimental-usecase_8_figure_6.jpg","caption":"Figure 6. AFM step height (a) after one ALET cycle of one monolayer of $\\mathrm{MoS}_2$ and (b) after two ALET cycles of trilayer $\\mathrm{MoS}_2$ . The $\\mathrm{MoS}_2$ was patterned with a photoresist, and the photoresist was removed after the ALET for the measurement of the etch height using AFM. The big step heights at the boundary (two bright lines on the optical microscopic picture) are due to the photoresist residue remaining even after the photoresist removal to measure the etch step after two ALET cycles.","id":"train/atomic-layer-etching/experimental-usecase/8/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/8/figure_6","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/Controlled Layer-by-Layer Etching of MoS2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":519,"height":1253,"image_format":"jpeg","image_sha256":"10150d25638cbf75630ff8c8c473cdb9d79e5d67663cc0bb6adf4d9b7d96e7b7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":3,"width":508,"height":631},{"panel_id":"b","x":3,"y":649,"width":511,"height":603}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_15_fig3.jpg","caption":"FIG.3. i 255 $\\mathbb{C}\\mathbb{I}_2$ impacts and $1000~\\mathrm{Ar^{+}}$ impacts, the $\\mathsf{Ar}^+$ energy is $70\\in V.$ Yellow translucent spheres are Si and cyan solid spheres are Cl. Si atoms are translucent in order to visualize Cl atoms mixed into the amorphous layer. Panel (a) is the side view of the simulation cell after the first chlorination step, panel (b) is after the first ion bombardment step, panel (c) is after the fourth chlorination step, panel (d) is after the fourth ion bombardment step, panel (e) is after the eighth chlorination step, and panel (f) is after the eighth ion bombardment step. The snapshots were created in Visual Molecular Dynamics (VMD) (Ref. 42).","id":"train/atomic-layer-etching/simulation-usecase/15/fig3","sample_id":"atomic-layer-etching/simulation-usecase/15/fig3","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"},{"panel_id":"c","label":"unknown"},{"panel_id":"d","label":"unknown"},{"panel_id":"e","label":"unknown"},{"panel_id":"f","label":"unknown"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":1345,"height":1216,"image_format":"jpeg","image_sha256":"f3f7edd3ecf98b4fc506ab0f5c5a453eae84ef7b7426dde3783ad8a827768782","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":114,"y":33,"width":273,"height":561},{"panel_id":"b","x":596,"y":15,"width":281,"height":589},{"panel_id":"c","x":1061,"y":37,"width":275,"height":569},{"panel_id":"d","x":117,"y":641,"width":272,"height":562},{"panel_id":"e","x":596,"y":649,"width":260,"height":554},{"panel_id":"f","x":1063,"y":667,"width":281,"height":541}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_13.jpg","caption":"Fig. 13. Calculated degree of dimer dissociation for TMA and DMAF as a function of temperature. For DMAF, three dimer structures were considered, each with two F-bridges, one F-bridge and one $\\mathrm{CH_3}$ -bridge, and two $\\mathrm{CH_3}$ -bridges. The total pressures of TMA and DMAF were assumed to be 1 and 0.01 Torr, respectively.","id":"train/atomic-layer-etching/simulation-usecase/29/fig_13","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_13","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"multiple line chart"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:image_caption"},"width":683,"height":833,"image_format":"jpeg","image_sha256":"b34d65ca66ac9eb59287ff57f56f994059254b39760860ee97d11a92c2aba0a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":7,"y":4,"width":653,"height":347},{"panel_id":"b","x":2,"y":362,"width":675,"height":467}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} +{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_42_38547ce11117d4bfe67b96dae7afd2d6cff0ec861b80b873016629dd9663eadd.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/42/38547ce11117d4bfe67b96dae7afd2d6cff0ec861b80b873016629dd9663eadd","sample_id":"atomic-layer-deposition/experimental-usecase/42/38547ce11117d4bfe67b96dae7afd2d6cff0ec861b80b873016629dd9663eadd","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":4,"width":513,"height":370}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/38547ce11117d4bfe67b96dae7afd2d6cff0ec861b80b873016629dd9663eadd.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/38547ce11117d4bfe67b96dae7afd2d6cff0ec861b80b873016629dd9663eadd.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/Coyle et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"not_found"},"width":516,"height":375,"image_format":"jpeg","image_sha256":"85dbb0afd07301da0ab3abcea01d8e92859a1b605a2543fd132b621391f1e286","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_1.jpg","caption":"FIG. 1. (a) Simulation domain for a horizontal cross-flow reactor. The 2D domain has cylindrical symmetry and incorporates an expanding section bridging the inlet manifold with the reactor tube. A picture of our experimental setup is shown for comparison. (b) Simulation domain for a $300\\mathrm{mm}$ wafer reactor. The simulation domain comprises a circular disk with a $50\\mathrm{cm}$ diameter and $3\\mathrm{cm}$ diameter inlet and outlet regions. The height of the reactor is $2\\mathrm{cm}$ . A $300\\mathrm{mm}$ wafer region is placed at the center of the reactor and treated as a separate area. Only half of the reactor is modeled, with mirror boundary conditions used at the bisecting plane.","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_1","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":0,"y":571,"width":670,"height":267},{"panel_id":"a","x":5,"y":0,"width":666,"height":563}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":672,"height":844,"image_format":"jpeg","image_sha256":"a5c64eaa5e46eb411d08ed5d4abf3d5ebfd5e73ce8454e810980a8f42ecb7819","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_16.jpg","caption":"FIG. 16. Comparison between simulations and experimental results on a nontraditional experimental setup in which subsaturating pulses of TMA and $\\mathsf{H}_2\\mathbb{O}$ are introduced locally using a pair of injectors. (a) Experimental setup, showing a wafer coated at a speed of 1 cycle per second. (b) Comparison between experiments and simulated growth rates for a speed of 4.17 cycles per second. At this rate, purge times are so short that there is an overimposed nonself-limited component. This is captured in the simulation results, which show the total material deposited over three ALD cycles.","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_16","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_16","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"contour heatmap"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":667,"height":397},{"panel_id":"b","x":0,"y":431,"width":339,"height":418},{"panel_id":"c","x":341,"y":422,"width":336,"height":427}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_16.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":667,"height":850,"image_format":"jpeg","image_sha256":"d8ec9e3361c19fe9ffeb00bed21161c87c15221693eb3580995c801d47dc1a13","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_36_figure_4.jpg","caption":"Figure 4. (a) Side view of the initial MD simulation cell without TMA molecules, where ODPA SAMs are aligned through VDW interactions, with coverage of $2 \\times 2$ grid/molecule. MD snapshots to compare TMA movement at different TMA pressures: (b) 1.3 Torr (low pressure), captured from supporting movies 1-4 and (c) 8.9 Torr (high pressure), captured from supporting movies 5-8. (d) TMA concentration at 8.9 and 1.3 Torr over time $(0 - 10 \\mathrm{ns})$ .","id":"train/atomic-layer-deposition/simulation-usecase/36/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/36/figure_4","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"},{"panel_id":"c","label":"unknown"},{"panel_id":"d","label":"multiple line chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":42,"y":14,"width":237,"height":305},{"panel_id":"b","x":308,"y":41,"width":240,"height":274},{"panel_id":"c","x":572,"y":65,"width":233,"height":248},{"panel_id":"d","x":846,"y":25,"width":421,"height":326}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/Seunggi Seo et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":1272,"height":353,"image_format":"jpeg","image_sha256":"12734e15339aa708dce3dc0b6db69dd4e83987b1cec00accb85cb5f81c9ccc86","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_36_figure_6.jpg","caption":"Figure 6. (a) SEM image of a patterned sample; the bright part of this image corresponds to the area coated by ODPA and etched, whereas the dark part shows the $\\mathrm{Al}_2\\mathrm{O}_3$ deposited area. (b) EDS elemental line scans for Al and O observed along the red line in the SEM image of (a). (c) AFM image of $\\mathrm{Al}_2\\mathrm{O}_3$ on patterned ODPA and (d) height profiles of AFM line scans along the red line in (c).","id":"train/atomic-layer-deposition/simulation-usecase/36/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/36/figure_6","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"heatmap"},{"panel_id":"d","label":"spectra chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":9,"y":0,"width":285,"height":290},{"panel_id":"b","x":352,"y":28,"width":306,"height":251},{"panel_id":"c","x":0,"y":314,"width":296,"height":264},{"panel_id":"d","x":337,"y":335,"width":321,"height":254}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/Seunggi Seo et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":658,"height":589,"image_format":"jpeg","image_sha256":"65bfd86b2f0d86c13e92f66e8f7d3925ea6f3d5fda2c261a818ed98b06c1c7f9","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_43_b56ead30cb1cd96ec5c166c53860b766aee63c3b20763054561678baa6a9e315.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/43/b56ead30cb1cd96ec5c166c53860b766aee63c3b20763054561678baa6a9e315","sample_id":"atomic-layer-deposition/simulation-usecase/43/b56ead30cb1cd96ec5c166c53860b766aee63c3b20763054561678baa6a9e315","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":332,"height":256},{"panel_id":"b","x":336,"y":0,"width":333,"height":255}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/b56ead30cb1cd96ec5c166c53860b766aee63c3b20763054561678baa6a9e315.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/b56ead30cb1cd96ec5c166c53860b766aee63c3b20763054561678baa6a9e315.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/Yuanxia Zheng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"not_found"},"width":672,"height":258,"image_format":"jpeg","image_sha256":"7cdca1e4b67dbdeb7ece9a9d9def8bd82184e5c06b84eb5277b7ed950e3e7eec","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_28_fig_6.jpg","caption":"FIG. 6. (a) Surface morphology and (b) reduction of surface roughness after isotropic ALE process as a function of the number of cycles.","id":"train/atomic-layer-etching/experimental-usecase/28/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/28/fig_6","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":74,"y":0,"width":594,"height":399},{"panel_id":"b","x":99,"y":439,"width":563,"height":396}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/Atomic layer etching of Al2O3 with NF3 plasma fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:image_caption"},"width":673,"height":863,"image_format":"jpeg","image_sha256":"360b81d79310504fc53d6b1257fff8cccd96e860e488816170352f12be0f5883","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_12.jpg","caption":"Fig. 12. (Color online) (a) TEM image of the pattern sample after the $\\mathrm{C_4F_8}$ plasma treatment for $30~\\mathrm{s}$ . The atomic percentages of C, F, Ti, and Si obtained by EDX spectroscopy in (b) the upper portion and (c) the lower portion.","id":"train/atomic-layer-etching/experimental-usecase/36/fig_12","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_12","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":7,"y":14,"width":655,"height":450},{"panel_id":"b","x":10,"y":474,"width":672,"height":364}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:image_caption"},"width":686,"height":1231,"image_format":"jpeg","image_sha256":"bbcc376ebb921233e3caa57a88231efecaa0a64e2e59d24721213f7c844eed09","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_38_fig_6.jpg","caption":"FIG. 6. AFM analysis of surface roughness after (a) 0, (b) 100, (c) 300, and (d) 400 ALE cycles. Ra (roughness average) and Rq (root mean squared) were captured from $5\\mu \\mathrm{m}$ scans.","id":"train/atomic-layer-etching/experimental-usecase/38/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/38/fig_6","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":0,"width":1072,"height":1017}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/High synergy atomic layer etching of AlGaNGaN.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:image_caption"},"width":1077,"height":1019,"image_format":"jpeg","image_sha256":"891436f4668476d722f9d6a12c0870029e22e02fb3107f30fd8a6b6fe37aa1ce","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_experimental-usecase_8_figure_6.jpg","caption":"Figure 6. AFM step height (a) after one ALET cycle of one monolayer of $\\mathrm{MoS}_2$ and (b) after two ALET cycles of trilayer $\\mathrm{MoS}_2$ . The $\\mathrm{MoS}_2$ was patterned with a photoresist, and the photoresist was removed after the ALET for the measurement of the etch height using AFM. The big step heights at the boundary (two bright lines on the optical microscopic picture) are due to the photoresist residue remaining even after the photoresist removal to measure the etch step after two ALET cycles.","id":"train/atomic-layer-etching/experimental-usecase/8/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/8/figure_6","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":3,"width":508,"height":631},{"panel_id":"b","x":3,"y":649,"width":511,"height":603}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/Controlled Layer-by-Layer Etching of MoS2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":519,"height":1253,"image_format":"jpeg","image_sha256":"10150d25638cbf75630ff8c8c473cdb9d79e5d67663cc0bb6adf4d9b7d96e7b7","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_15_fig3.jpg","caption":"FIG.3. i 255 $\\mathbb{C}\\mathbb{I}_2$ impacts and $1000~\\mathrm{Ar^{+}}$ impacts, the $\\mathsf{Ar}^+$ energy is $70\\in V.$ Yellow translucent spheres are Si and cyan solid spheres are Cl. Si atoms are translucent in order to visualize Cl atoms mixed into the amorphous layer. Panel (a) is the side view of the simulation cell after the first chlorination step, panel (b) is after the first ion bombardment step, panel (c) is after the fourth chlorination step, panel (d) is after the fourth ion bombardment step, panel (e) is after the eighth chlorination step, and panel (f) is after the eighth ion bombardment step. The snapshots were created in Visual Molecular Dynamics (VMD) (Ref. 42).","id":"train/atomic-layer-etching/simulation-usecase/15/fig3","sample_id":"atomic-layer-etching/simulation-usecase/15/fig3","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"},{"panel_id":"c","label":"unknown"},{"panel_id":"d","label":"unknown"},{"panel_id":"e","label":"unknown"},{"panel_id":"f","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":114,"y":33,"width":273,"height":561},{"panel_id":"b","x":596,"y":15,"width":281,"height":589},{"panel_id":"c","x":1061,"y":37,"width":275,"height":569},{"panel_id":"d","x":117,"y":641,"width":272,"height":562},{"panel_id":"e","x":596,"y":649,"width":260,"height":554},{"panel_id":"f","x":1063,"y":667,"width":281,"height":541}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":1345,"height":1216,"image_format":"jpeg","image_sha256":"f3f7edd3ecf98b4fc506ab0f5c5a453eae84ef7b7426dde3783ad8a827768782","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_13.jpg","caption":"Fig. 13. Calculated degree of dimer dissociation for TMA and DMAF as a function of temperature. For DMAF, three dimer structures were considered, each with two F-bridges, one F-bridge and one $\\mathrm{CH_3}$ -bridge, and two $\\mathrm{CH_3}$ -bridges. The total pressures of TMA and DMAF were assumed to be 1 and 0.01 Torr, respectively.","id":"train/atomic-layer-etching/simulation-usecase/29/fig_13","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_13","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":7,"y":4,"width":653,"height":347},{"panel_id":"b","x":2,"y":362,"width":675,"height":467}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:image_caption"},"width":683,"height":833,"image_format":"jpeg","image_sha256":"b34d65ca66ac9eb59287ff57f56f994059254b39760860ee97d11a92c2aba0a4","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/unknown/validation/metadata.jsonl b/subsets/unknown/validation/metadata.jsonl index e184c0cd9075104caee56e8396f6b9346e7dc802..6bf2fbcc5315b92ee96a5866defaec59a7d325ec 100644 --- a/subsets/unknown/validation/metadata.jsonl +++ b/subsets/unknown/validation/metadata.jsonl @@ -1,2 +1,2 @@ -{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig_5.jpg","caption":"FIG. 5. (Color online) AFM images of as-deposited $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ thin film (a) and of those annealed at $500^{\\circ}\\mathrm{C}$ (b), $700^{\\circ}\\mathrm{C}$ (c), and $900^{\\circ}\\mathrm{C}$ (d) in RTA system for $1\\mathrm{min}$ . The RMS values were 46, 4.1, 5.1, and $4.6\\mathrm{\\AA}$ for as-deposited thin film and the thin films annealed at 500, 700, and $900^{\\circ}\\mathrm{C}$ , respectively.","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig_5","subset":"unknown","split":"validation","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"},{"panel_id":"c","label":"unknown"},{"panel_id":"d","label":"unknown"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:image_caption"},"width":380,"height":1300,"image_format":"jpeg","image_sha256":"494085c88bfb219ac7d0270201c34ef7cadeafeeab5b61d507d1fb65603afd5b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":5,"y":0,"width":374,"height":308},{"panel_id":"b","x":-1,"y":333,"width":381,"height":307},{"panel_id":"c","x":-1,"y":662,"width":381,"height":311},{"panel_id":"d","x":8,"y":1005,"width":371,"height":290}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_4_figure_4.jpg","caption":"Figure 4. Elemental TOF-SIMS mappings showing (a) $\\mathbf{Ge}^{+}$ in gray, (b) $\\mathrm{Al}^{+}$ in yellow, and (c) $\\mathrm{Si}^{+}$ in green, after $15\\mathrm{SiO}_2$ ABC-type ALD cycles using Hacac as inhibitor; scale bar is $10\\mu \\mathrm{m}$ . (d) Corresponding line scans for $\\mathbf{Ge}^{+}$ , $\\mathrm{Al}^{+}$ , and $\\mathrm{Si}^{+}$ of the sample.","id":"validation/atomic-layer-deposition/simulation-usecase/4/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/4/figure_4","subset":"unknown","split":"validation","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"},{"panel_id":"c","label":"unknown"},{"panel_id":"d","label":"multiple line chart"}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":983,"height":847,"image_format":"jpeg","image_sha256":"b51a119869a759b65e7ae070ca689bf68cdbca6fa97266ae20f8797f53c89625","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":60,"y":0,"width":407,"height":392},{"panel_id":"b","x":566,"y":0,"width":405,"height":393},{"panel_id":"c","x":59,"y":453,"width":408,"height":394},{"panel_id":"d","x":518,"y":454,"width":464,"height":388}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a series of microscopy images labeled a, b, and c, alongside a line chart d.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays a series of microscopy images labeled a, b, and c, alongside a line chart d.\"},{\"panel_id\":\"c\",\"text\":\"The figure displays a series of microscopy images labeled a, b, and c, alongside a line chart d.\"},{\"panel_id\":\"d\",\"text\":\"This figure shows an EDX line scan of elemental distributions for Aluminum (Al), Germanium (Ge), and Silicon (Si) over a distance of ~70 μm. The Al signal exhibits a clear square-wave periodicity, alternating between high intensity (~4.5 a.u.) and near zero, indicating a patterned Al structure with ~10 μm line width and ~20 μm pitch. In contrast, the Ge and Si signals remain relatively constant and low across the scan, confirming that they constitute the continuous underlying substrate beneath the patterned Al features.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"| Distance (µm) | Ge⁺ Intensity (a.u.) | Al⁺ Intensity (a.u.) | Si⁺ Intensity (a.u.) |\\n|--------------|----------------------|----------------------|----------------------|\\n| 150 | 1 | 0.2 | 1 |\\n| 160 | 1 | 4.5 | 1 |\\n| 170 | 1 | 0.2 | 1 |\\n| 180 | 1 | 4.5 | 1 |\\n| 190 | 1 | 0.2 | 1 |\\n| 200 | 1 | 4.5 | 1 |\\n| 210 | 1 | 0.2 | 1 |\\n| 220 | 1 | 4.5 | 1 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Deposition: Deposition of a blanket Aluminum film.\\n\\nPhotolithography: Patterning a photoresist mask.\\n\\nEtching: Removing the exposed Aluminum (or performing Lift-off).\\n\\nStripping: Removal of the photoresist to leave the isolated metal lines shown in the graph.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Signal Convolution / Blurring. The current pitch is approximately 20 μm (e.g., peaks from ~155 to 175 μm). If the pattern density were doubled (pitch = 10 μm, line width = 5 μm) and the measurement beam were also 5 μm, the beam would simultaneously overlap both the line edges and the gaps.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Substrate/Underlayer. The continuous Germanium signal implies that Ge acts as the substrate or a continuous underlying layer that spans the entire sample. The Aluminum exists as discrete features patterned on top of this Germanium layer. If Ge were patterned on top of Al, the Ge signal would likely vanish in the gaps between the Al lines.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The steep, well-defined transitions indicate a high-contrast, sharp boundary between the deposited film and the inhibited area. This signifies excellent selectivity and minimal lateral growth (overgrowth). For microelectronics, such sharp interfaces are essential for defining small, high-fidelity features in advanced device fabrication without short circuits or leakage paths.\"}]}]"} +{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig_5.jpg","caption":"FIG. 5. (Color online) AFM images of as-deposited $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$ thin film (a) and of those annealed at $500^{\\circ}\\mathrm{C}$ (b), $700^{\\circ}\\mathrm{C}$ (c), and $900^{\\circ}\\mathrm{C}$ (d) in RTA system for $1\\mathrm{min}$ . The RMS values were 46, 4.1, 5.1, and $4.6\\mathrm{\\AA}$ for as-deposited thin film and the thin films annealed at 500, 700, and $900^{\\circ}\\mathrm{C}$ , respectively.","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig_5","subset":"unknown","split":"validation","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"},{"panel_id":"c","label":"unknown"},{"panel_id":"d","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":0,"width":374,"height":308},{"panel_id":"b","x":-1,"y":333,"width":381,"height":307},{"panel_id":"c","x":-1,"y":662,"width":381,"height":311},{"panel_id":"d","x":8,"y":1005,"width":371,"height":290}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:image_caption"},"width":380,"height":1300,"image_format":"jpeg","image_sha256":"494085c88bfb219ac7d0270201c34ef7cadeafeeab5b61d507d1fb65603afd5b","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_4_figure_4.jpg","caption":"Figure 4. Elemental TOF-SIMS mappings showing (a) $\\mathbf{Ge}^{+}$ in gray, (b) $\\mathrm{Al}^{+}$ in yellow, and (c) $\\mathrm{Si}^{+}$ in green, after $15\\mathrm{SiO}_2$ ABC-type ALD cycles using Hacac as inhibitor; scale bar is $10\\mu \\mathrm{m}$ . (d) Corresponding line scans for $\\mathbf{Ge}^{+}$ , $\\mathrm{Al}^{+}$ , and $\\mathrm{Si}^{+}$ of the sample.","id":"validation/atomic-layer-deposition/simulation-usecase/4/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/4/figure_4","subset":"unknown","split":"validation","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"},{"panel_id":"c","label":"unknown"},{"panel_id":"d","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a series of microscopy images labeled a, b, and c, alongside a line chart d.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays a series of microscopy images labeled a, b, and c, alongside a line chart d.\"},{\"panel_id\":\"c\",\"text\":\"The figure displays a series of microscopy images labeled a, b, and c, alongside a line chart d.\"},{\"panel_id\":\"d\",\"text\":\"This figure shows an EDX line scan of elemental distributions for Aluminum (Al), Germanium (Ge), and Silicon (Si) over a distance of ~70 μm. The Al signal exhibits a clear square-wave periodicity, alternating between high intensity (~4.5 a.u.) and near zero, indicating a patterned Al structure with ~10 μm line width and ~20 μm pitch. In contrast, the Ge and Si signals remain relatively constant and low across the scan, confirming that they constitute the continuous underlying substrate beneath the patterned Al features.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"| Distance (µm) | Ge⁺ Intensity (a.u.) | Al⁺ Intensity (a.u.) | Si⁺ Intensity (a.u.) |\\n|--------------|----------------------|----------------------|----------------------|\\n| 150 | 1 | 0.2 | 1 |\\n| 160 | 1 | 4.5 | 1 |\\n| 170 | 1 | 0.2 | 1 |\\n| 180 | 1 | 4.5 | 1 |\\n| 190 | 1 | 0.2 | 1 |\\n| 200 | 1 | 4.5 | 1 |\\n| 210 | 1 | 0.2 | 1 |\\n| 220 | 1 | 4.5 | 1 |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Deposition: Deposition of a blanket Aluminum film.\\n\\nPhotolithography: Patterning a photoresist mask.\\n\\nEtching: Removing the exposed Aluminum (or performing Lift-off).\\n\\nStripping: Removal of the photoresist to leave the isolated metal lines shown in the graph.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Signal Convolution / Blurring. The current pitch is approximately 20 μm (e.g., peaks from ~155 to 175 μm). If the pattern density were doubled (pitch = 10 μm, line width = 5 μm) and the measurement beam were also 5 μm, the beam would simultaneously overlap both the line edges and the gaps.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Substrate/Underlayer. The continuous Germanium signal implies that Ge acts as the substrate or a continuous underlying layer that spans the entire sample. The Aluminum exists as discrete features patterned on top of this Germanium layer. If Ge were patterned on top of Al, the Ge signal would likely vanish in the gaps between the Al lines.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The steep, well-defined transitions indicate a high-contrast, sharp boundary between the deposited film and the inhibited area. This signifies excellent selectivity and minimal lateral growth (overgrowth). For microelectronics, such sharp interfaces are essential for defining small, high-fidelity features in advanced device fabrication without short circuits or leakage paths.\"}]}]","bbox":[{"panel_id":"a","x":60,"y":0,"width":407,"height":392},{"panel_id":"b","x":566,"y":0,"width":405,"height":393},{"panel_id":"c","x":59,"y":453,"width":408,"height":394},{"panel_id":"d","x":518,"y":454,"width":464,"height":388}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":983,"height":847,"image_format":"jpeg","image_sha256":"b51a119869a759b65e7ae070ca689bf68cdbca6fa97266ae20f8797f53c89625","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/workflow-diagram/test/metadata.jsonl b/subsets/workflow-diagram/test/metadata.jsonl index 391002b1fd9e175cd3ce55d5b35915d41f024b8a..62f45fabefd44dbe869d282f26597d25a24c047b 100644 --- a/subsets/workflow-diagram/test/metadata.jsonl +++ b/subsets/workflow-diagram/test/metadata.jsonl @@ -1 +1 @@ -{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_5.jpg","caption":"Fig. 5. A process diagram depicting the multiscale CFD model that connects the macroscopic and microscopic domains to simultaneously compute pressure and temperature spatially in the macroscopic domain and reaction kinetics in the microscopic domain through each kMC time update. The connection of the macroscopic and microscopic models is made possible through a Linux Bash Shell script.","id":"test/atomic-layer-etching/simulation-usecase/34/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_5","subset":"workflow-diagram","split":"test","classification":[{"panel_id":"a","label":"workflow diagram"}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"workflow diagram","caption_source":"content.json:image_caption"},"width":845,"height":566,"image_format":"jpeg","image_sha256":"1fa0c82f9f88003f88cd62e84e59c6f3988c91a76a56f3bec4d63c7279bee6eb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":845,"height":566}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} +{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_5.jpg","caption":"Fig. 5. A process diagram depicting the multiscale CFD model that connects the macroscopic and microscopic domains to simultaneously compute pressure and temperature spatially in the macroscopic domain and reaction kinetics in the microscopic domain through each kMC time update. The connection of the macroscopic and microscopic models is made possible through a Linux Bash Shell script.","id":"test/atomic-layer-etching/simulation-usecase/34/fig_5","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_5","subset":"workflow-diagram","split":"test","classification":[{"panel_id":"a","label":"workflow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":845,"height":566}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"workflow diagram","caption_source":"content.json:image_caption"},"width":845,"height":566,"image_format":"jpeg","image_sha256":"1fa0c82f9f88003f88cd62e84e59c6f3988c91a76a56f3bec4d63c7279bee6eb","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} diff --git a/subsets/workflow-diagram/train/metadata.jsonl b/subsets/workflow-diagram/train/metadata.jsonl index 90e7a2dd8fa3b6eea6b18e359222e58591f041c1..9774bc1c4eb294a74ae0550455b759a7660d5bcd 100644 --- a/subsets/workflow-diagram/train/metadata.jsonl +++ b/subsets/workflow-diagram/train/metadata.jsonl @@ -1,6 +1,6 @@ -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_25_3c11adb668f9644c17072675a51bcbaaf434c0836467b44600b76fb33f050306.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/25/3c11adb668f9644c17072675a51bcbaaf434c0836467b44600b76fb33f050306","sample_id":"atomic-layer-deposition/simulation-usecase/25/3c11adb668f9644c17072675a51bcbaaf434c0836467b44600b76fb33f050306","subset":"workflow-diagram","split":"train","classification":[{"panel_id":"a","label":"workflow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/3c11adb668f9644c17072675a51bcbaaf434c0836467b44600b76fb33f050306.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/3c11adb668f9644c17072675a51bcbaaf434c0836467b44600b76fb33f050306.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/Kristopher S. Brown et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"workflow diagram","caption_source":"not_found"},"width":611,"height":353,"image_format":"jpeg","image_sha256":"37fe2dc923b81ddfbf28d7b034423a5f7db22dde0017ff7e09615c4597e84131","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":1,"y":2,"width":606,"height":348}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_29_fig_4.jpg","caption":"Fig. 4. The solution strategy for the ALD precursor design problem.","id":"train/atomic-layer-deposition/simulation-usecase/29/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/29/fig_4","subset":"workflow-diagram","split":"train","classification":[{"panel_id":"a","label":"workflow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"workflow diagram","caption_source":"content.json:img_caption"},"width":645,"height":1058,"image_format":"jpeg","image_sha256":"efbfb2f0b07d331b3537478c4d8dbe848a4ca9cb1ed0c654160f10a79b3c7b1d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":1,"width":641,"height":997}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_29_fig_5.jpg","caption":"Fig. 5. Solution strategy applied for optimal interaction parameter selection using the EACO algorithm.","id":"train/atomic-layer-deposition/simulation-usecase/29/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/29/fig_5","subset":"workflow-diagram","split":"train","classification":[{"panel_id":"a","label":"workflow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"workflow diagram","caption_source":"content.json:img_caption"},"width":972,"height":886,"image_format":"jpeg","image_sha256":"c70f659b8e2be019ed5f6fa800b68661e17192f691be49c2e5ca709300640e1e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":2,"width":970,"height":880}],"summarization":"[]","data_extraction":"[]","vqa":"[]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_3.jpg","caption":"Fig. 3 - Schematic representation of the implemented computational strategy.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_3","subset":"workflow-diagram","split":"train","classification":[{"panel_id":"a","label":"workflow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"workflow diagram","caption_source":"content.json:img_caption"},"width":989,"height":789,"image_format":"jpeg","image_sha256":"61931db1bd41f839c55c649a8534559fb6a61f1d5bef7b12b7e3fcd29f591959","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":983,"height":783}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The flow chart illustrates the sequential steps involved in modeling argon flow within a reactor and feeding system, including calculating outlet pressure, implementing boundary conditions, and simulating ALD exposure steps.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Step | Description |\\n|------|-------------|\\n| 1 | **Model constant flow of argon** (Outlet pressure = 50 mTorr) |\\n| 2 | Get pressure distribution, outlet flow rate, and side inlet pressure |\\n| 3 | Implement the calculated flow rate as outlet boundary condition |\\n| 4 | Implement the calculated pulses as inlet boundary condition |\\n| 5 | **Simulate ALD exposure steps** |\\n| 6 | **Model argon flow / Feeding system** (Outlet pressure = Reactor side inlet pressure) |\\n| 7 | Simulate valve opening / compute react |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A major difficulty in modelling the process under study is the absence of data regarding the reactant pulses that are injected into the ALD reactor during the exposure steps of the cycle, as no measuring device is installed\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reactant flows were calculated using the feeding system model and a strategy was developed to connect the models which describe the feeding and the deposition parts of the ALD system.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Carrier gas Ar flow (through the feeding system and side inlet of the reactor) (sccm) = 30\\n2. Top inlet Ar flow (sccm) = 100 \\n3. Load lock inlet Ar flow (sccm) = 50\\n4. Base pressure (as measured by Pirani gauge at the outlet) (mTorr) = 50\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} -{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_9_figure_6.jpg","caption":"Figure 6. Kinetic Monte Carlo cycle.","id":"train/atomic-layer-deposition/simulation-usecase/9/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/9/figure_6","subset":"workflow-diagram","split":"train","classification":[{"panel_id":"a","label":"workflow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/A. Dkhissi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"workflow diagram","caption_source":"content.json:img_caption"},"width":672,"height":356,"image_format":"jpeg","image_sha256":"b5fae6a2879c1245d02cac694e482c8030f897974efc30d08cdf7fa1e0b50034","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":2,"y":0,"width":668,"height":353}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the main loop of a kinetic Monte Carlo (KMC) simulation. First, all possible events are filtered based on the current system state. Next, the time for each remaining event is calculated. The event with the smallest occurrence time is then selected and applied, which changes the system configuration. This update completes one KMC cycle, after which the process repeats to move the simulation forward in time.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In a fixed time-step method, the system is updated at regular time intervals, even if nothing important happens. In contrast, KMC advances time by jumping directly to the next event. This makes KMC more efficient for systems where events happen at irregular times, such as surface reactions in ALD or ALE.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Specific occurrence times calculation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-It removes events that cannot happen\\n, -It reduces unnecessary calculations\\n, -It keeps the simulation physically correct\"}]}]"} -{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_3.jpg","caption":"Fig. 3. A process diagram of the multiscale computational fluid dynamics (CFD) workflow. The macroscopic model using Ansys Fluent runs with a time step size of 0.0005 s and transfers precursor partial pressure and temperature data on 18 nodes of the substrate to the microscopic model. The microscopic model simulates the surface kinetics on the substrate using the kMC algorithm. The kMC code calculates the source terms (consumption and generation of species), which enables the macroscopic model to consume or generate the corresponding amount of species on a surface area-average on 18 nodal regions of the substrate. Also, the kMC script calculates the time evolution $\\Delta t$ , which allows the macroscopic model to compute the exact number of time steps to run the CFD simulation. Lastly, the macroscopic and microscopic simulations are connected by a Linux shell script, resulting in a multiscale CFD simulation, which is halted until the substrate reaches the end of the reactor.","id":"train/atomic-layer-etching/simulation-usecase/16/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_3","subset":"workflow-diagram","split":"train","classification":[{"panel_id":"a","label":"workflow diagram"}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"workflow diagram","caption_source":"content.json:img_caption"},"width":670,"height":439,"image_format":"jpeg","image_sha256":"25406ab8fe12c7cfa82a89f3e288b18d589e0cef1b7d721fb01964017bfa32a2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0","bbox":[{"panel_id":"a","x":0,"y":0,"width":670,"height":439}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The process flow diagram illustrates the sequential steps involved in a simulation process using a macroscopic CFD model and a microscopic kMC model.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"information regarding the partial pressure of precursor on the substrate as well as the temperature there.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This part of the total model calculates the surface kinetics that will be fed back into the CFD model.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This will be based on a certain inpur parameter that will be reached by t + delta t.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_25_3c11adb668f9644c17072675a51bcbaaf434c0836467b44600b76fb33f050306.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/25/3c11adb668f9644c17072675a51bcbaaf434c0836467b44600b76fb33f050306","sample_id":"atomic-layer-deposition/simulation-usecase/25/3c11adb668f9644c17072675a51bcbaaf434c0836467b44600b76fb33f050306","subset":"workflow-diagram","split":"train","classification":[{"panel_id":"a","label":"workflow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":2,"width":606,"height":348}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/3c11adb668f9644c17072675a51bcbaaf434c0836467b44600b76fb33f050306.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/images/3c11adb668f9644c17072675a51bcbaaf434c0836467b44600b76fb33f050306.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/25/Kristopher S. Brown et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"workflow diagram","caption_source":"not_found"},"width":611,"height":353,"image_format":"jpeg","image_sha256":"37fe2dc923b81ddfbf28d7b034423a5f7db22dde0017ff7e09615c4597e84131","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_29_fig_4.jpg","caption":"Fig. 4. The solution strategy for the ALD precursor design problem.","id":"train/atomic-layer-deposition/simulation-usecase/29/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/29/fig_4","subset":"workflow-diagram","split":"train","classification":[{"panel_id":"a","label":"workflow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":1,"width":641,"height":997}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"workflow diagram","caption_source":"content.json:img_caption"},"width":645,"height":1058,"image_format":"jpeg","image_sha256":"efbfb2f0b07d331b3537478c4d8dbe848a4ca9cb1ed0c654160f10a79b3c7b1d","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_29_fig_5.jpg","caption":"Fig. 5. Solution strategy applied for optimal interaction parameter selection using the EACO algorithm.","id":"train/atomic-layer-deposition/simulation-usecase/29/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/29/fig_5","subset":"workflow-diagram","split":"train","classification":[{"panel_id":"a","label":"workflow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":2,"width":970,"height":880}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"workflow diagram","caption_source":"content.json:img_caption"},"width":972,"height":886,"image_format":"jpeg","image_sha256":"c70f659b8e2be019ed5f6fa800b68661e17192f691be49c2e5ca709300640e1e","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_32_fig_3.jpg","caption":"Fig. 3 - Schematic representation of the implemented computational strategy.","id":"train/atomic-layer-deposition/simulation-usecase/32/fig_3","sample_id":"atomic-layer-deposition/simulation-usecase/32/fig_3","subset":"workflow-diagram","split":"train","classification":[{"panel_id":"a","label":"workflow diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The flow chart illustrates the sequential steps involved in modeling argon flow within a reactor and feeding system, including calculating outlet pressure, implementing boundary conditions, and simulating ALD exposure steps.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Step | Description |\\n|------|-------------|\\n| 1 | **Model constant flow of argon** (Outlet pressure = 50 mTorr) |\\n| 2 | Get pressure distribution, outlet flow rate, and side inlet pressure |\\n| 3 | Implement the calculated flow rate as outlet boundary condition |\\n| 4 | Implement the calculated pulses as inlet boundary condition |\\n| 5 | **Simulate ALD exposure steps** |\\n| 6 | **Model argon flow / Feeding system** (Outlet pressure = Reactor side inlet pressure) |\\n| 7 | Simulate valve opening / compute react |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A major difficulty in modelling the process under study is the absence of data regarding the reactant pulses that are injected into the ALD reactor during the exposure steps of the cycle, as no measuring device is installed\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The reactant flows were calculated using the feeding system model and a strategy was developed to connect the models which describe the feeding and the deposition parts of the ALD system.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1. Carrier gas Ar flow (through the feeding system and side inlet of the reactor) (sccm) = 30\\n2. Top inlet Ar flow (sccm) = 100 \\n3. Load lock inlet Ar flow (sccm) = 50\\n4. Base pressure (as measured by Pirani gauge at the outlet) (mTorr) = 50\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":983,"height":783}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/32/reactorGP Gakis et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"32","first_classification_panel_id":"a","first_classification_label":"workflow diagram","caption_source":"content.json:img_caption"},"width":989,"height":789,"image_format":"jpeg","image_sha256":"61931db1bd41f839c55c649a8534559fb6a61f1d5bef7b12b7e3fcd29f591959","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_9_figure_6.jpg","caption":"Figure 6. Kinetic Monte Carlo cycle.","id":"train/atomic-layer-deposition/simulation-usecase/9/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/9/figure_6","subset":"workflow-diagram","split":"train","classification":[{"panel_id":"a","label":"workflow diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the main loop of a kinetic Monte Carlo (KMC) simulation. First, all possible events are filtered based on the current system state. Next, the time for each remaining event is calculated. The event with the smallest occurrence time is then selected and applied, which changes the system configuration. This update completes one KMC cycle, after which the process repeats to move the simulation forward in time.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"In a fixed time-step method, the system is updated at regular time intervals, even if nothing important happens. In contrast, KMC advances time by jumping directly to the next event. This makes KMC more efficient for systems where events happen at irregular times, such as surface reactions in ALD or ALE.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Specific occurrence times calculation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-It removes events that cannot happen\\n, -It reduces unnecessary calculations\\n, -It keeps the simulation physically correct\"}]}]","bbox":[{"panel_id":"a","x":2,"y":0,"width":668,"height":353}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/9/A. Dkhissi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"9","first_classification_panel_id":"a","first_classification_label":"workflow diagram","caption_source":"content.json:img_caption"},"width":672,"height":356,"image_format":"jpeg","image_sha256":"b5fae6a2879c1245d02cac694e482c8030f897974efc30d08cdf7fa1e0b50034","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"} +{"file_name":"images/train_atomic-layer-etching_simulation-usecase_16_fig_3.jpg","caption":"Fig. 3. A process diagram of the multiscale computational fluid dynamics (CFD) workflow. The macroscopic model using Ansys Fluent runs with a time step size of 0.0005 s and transfers precursor partial pressure and temperature data on 18 nodes of the substrate to the microscopic model. The microscopic model simulates the surface kinetics on the substrate using the kMC algorithm. The kMC code calculates the source terms (consumption and generation of species), which enables the macroscopic model to consume or generate the corresponding amount of species on a surface area-average on 18 nodal regions of the substrate. Also, the kMC script calculates the time evolution $\\Delta t$ , which allows the macroscopic model to compute the exact number of time steps to run the CFD simulation. Lastly, the macroscopic and microscopic simulations are connected by a Linux shell script, resulting in a multiscale CFD simulation, which is halted until the substrate reaches the end of the reactor.","id":"train/atomic-layer-etching/simulation-usecase/16/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/16/fig_3","subset":"workflow-diagram","split":"train","classification":[{"panel_id":"a","label":"workflow diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The process flow diagram illustrates the sequential steps involved in a simulation process using a macroscopic CFD model and a microscopic kMC model.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"information regarding the partial pressure of precursor on the substrate as well as the temperature there.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This part of the total model calculates the surface kinetics that will be fed back into the CFD model.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"This will be based on a certain inpur parameter that will be reached by t + delta t.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":670,"height":439}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/images/fig_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/16/Multiscale computational fluid dynamics modeling.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"16","first_classification_panel_id":"a","first_classification_label":"workflow diagram","caption_source":"content.json:img_caption"},"width":670,"height":439,"image_format":"jpeg","image_sha256":"25406ab8fe12c7cfa82a89f3e288b18d589e0cef1b7d721fb01964017bfa32a2","metadata_license":"MIT for repository metadata where applicable; see LICENSE.","image_license":"mixed-rights; inspect source article and provenance before reuse.","image_reuse_status":"requires rights review before reuse or redistribution.","schema_version":"1.0.0"}